Modification of energy band alignment and electric properties of Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin-film ferroelectric varactors by Ag impurities at interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirsch, S.; Komissinskiy, P., E-mail: komissinskiy@oxide.tu-darmstadt.de; Flege, S.

2014-06-28

We report on the effects of Ag impurities at interfaces of parallel-plate Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin film ferroelectric varactors. Ag impurities occur at the interfaces due to diffusion of Ag from colloidal silver paint used to attach the varactor samples with their back side to the plate heated at 600–750 °C during deposition of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}. X-ray photoelectron spectroscopy and secondary ion mass spectrometry suggest that amount and distribution of Ag adsorbed at the interfaces depend strongly on the adsorbent surface layer. In particular, Ag preferentially accumulates on top of the Pt bottom electrode. The presence of Agmore » significantly reduces the barrier height between Pt and Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} leading to an increased leakage current density and, thus, to a severe degradation of the varactor performance.« less

Automatic tuned MRI RF coil for multinuclear imaging of small animals at 3T.

PubMed

Muftuler, L Tugan; Gulsen, Gultekin; Sezen, Kumsal D; Nalcioglu, Orhan

2002-03-01

We have developed an MRI RF coil whose tuning can be adjusted automatically between 120 and 128 MHz for sequential spectroscopic imaging of hydrogen and fluorine nuclei at field strength 3 T. Variable capacitance (varactor) diodes were placed on each rung of an eight-leg low-pass birdcage coil to change the tuning frequency of the coil. The diode junction capacitance can be controlled by the amount of applied reverse bias voltage. Impedance matching was also done automatically by another pair of varactor diodes to obtain the maximum SNR at each frequency. The same bias voltage was applied to the tuning varactors on all rungs to avoid perturbations in the coil. A network analyzer was used to monitor matching and tuning of the coil. A Pentium PC controlled the analyzer through the GPIB bus. A code written in LABVIEW was used to communicate with the network analyzer and adjust the bias voltages of the varactors via D/A converters. Serially programmed D/A converter devices were used to apply the bias voltages to the varactors. Isolation amplifiers were used together with RF choke inductors to provide isolation between the RF coil and the DC bias lines. We acquired proton and fluorine images sequentially from a multicompartment phantom using the designed coil. Good matching and tuning were obtained at both resonance frequencies. The tuning and matching of the coil were changed from one resonance frequency to the other within 60 s. (c) 2002 Elsevier Science (USA).

Study of a Flexible Low Profile Tunable Dipole Antenna Using Barium Strontium Titanate Varactors

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas; Miranda, Felix A.

2014-01-01

In this paper a flexible low profile dipole antenna using a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells is presented. The varactor chips were placed only along one dimension of the FSS to avoid the use of vias and simplify the DC bias network. The antenna uses overlapping metallic plates that resemble fish scales as a ground plane to improve the flexibility of the multi-material stack structure. The measured data of the antenna demonstrate tunability from 2.42 GHz to 2.66 GHz and 1.3 dB gain drop when using overlapping metallic plates instead of continuous ground plane. The total antenna thickness is approximately lambda/24.

Functional Epitaxial Oxide Devices

DTIC Science & Technology

2010-04-12

complex oxides , epitaxial growth, antennas, varactors 16. SECURITY CLASSIFICATION OF: REPORT U b. ABSTRACT u c. THIS PAGE u 17. LIMITATION OF...Technical Report DATES COVERED (From - To) 17-06-2008-31-12-2009 4. TITLE AND SUBTITLE Functional Epitaxial Oxide Devices 5a. CONTRACT NUMBER NA...This research effort addresses the need for high performance radio frequency (RF) components, specifically varactors and miniaturized, high gain

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

NASA Astrophysics Data System (ADS)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

A 5GHz Band Low Noise and Wide Tuning Range Si-CMOS VCO with a Novel Varactors Pair Circuit

NASA Astrophysics Data System (ADS)

Ta, Tuan Thanh; Kameda, Suguru; Takagi, Tadashi; Tsubouchi, Kazuo

In this paper, a fully integrated 5GHz voltage controlled oscillator (VCO) is presented. The VCO is designed with 0.18µm silicon complementary metal oxide semiconductor (Si-CMOS) process. To achieve low phase noise, a novel varactors pair circuit is proposed to cancel effects of capacitance fluctuation that makes harmonic currents which increase phase noise of VCO. The VCO with the proposed varactor circuit has tuning range from 5.1GHz to 6.1GHz (relative value of 17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

A new fabrication technique for back-to-back varactor diodes

NASA Technical Reports Server (NTRS)

Smith, R. Peter; Choudhury, Debabani; Martin, Suzanne; Frerking, Margaret A.; Liu, John K.; Grunthaner, Frank A.

1992-01-01

A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, T.C.; Chen, Seng Woon; Pande, K.

1993-12-01

A high-performance integrated power module using U-band MMIC MESFET power amplifiers in conjunction with W-band MMIC high efficiency varactor doublers has been developed for millimeter-wave system applications. This paper presents the design, fabrication, and performance of this W-band integrated power module. Measured results of the complete integrated power module show an output power of 90 mW with an overall associated gain of 29.5 dB at 94 GHz. A saturated power of over 95 mW was also achieved. These results represent the highest reported power and gain at W-band using MESFET and varactor frequency doubling technologies. This integrated power module ismore » suitable for the future 94 GHz missile seeker applications.« less

Noncontact Characterization of PV Detector Arrays

DTIC Science & Technology

1990-06-01

11-7 3 III DIODE ARRAY AS A SAW CONVOLVER/STORAGE CORRELATOR .... III-1 III.A NONLINEAR ( VARACTOR ) ACTION OF THE DIODES .......................... I...associated with the diodes in the detector array. The varactor action of the diodes produces a voltage across the diodes which is pro- portional to the...type of interactions desired herein. An alternative approach is to em- ploy thin dielectric overlays, such as zinc oxide or silicon nitride

A Study on Reactive Ion Etching of Barium Strontium Titanate Films Using Mixtures of Argon (Ar), Carbon Tetrafluoride (CF4), and Sulfur Hexafluoride (SF6)

DTIC Science & Technology

2014-07-01

BST) is a complex oxide material with ferroic properties which has been considered for applications ranging from non-volatile memory to microwave...utilizing self-aligned etching to create metal-insulator-metal (MIM) varactors . As part of this method we employed reactive ion etching (RIE) to remove BST...of BST removed vs. etch time for Ar:SF6. .........................................................4 Figure 3. SEM cross-section of varactor showing

Piezoelectric Non-Linear Nanomechanical Temperature and Acceleration Insensitive Clocks (PENNTAC) Phase 1 Evaluation and Plans for Phase 2

DTIC Science & Technology

2013-05-01

95.2 dBc/Hz, (c) - 94.2 dBc/Hz. Fig. 4: Mechanically compensated AlN resonators. A thin oxide layer is used to completely cancel the linear...pumped is represented by a non-linear capacitor. This capacitor will be first implemented via a varactor and then substituted by a purely mechanical...demonstrate the advantages of a parametric oscillator: (i) we will first use an external electronic varactor to prove that a parametric oscillator

Tunable impedance matching network fundamental limits and practical considerations

NASA Astrophysics Data System (ADS)

Allen, Wesley N.

As wireless devices continue to increase in utility while decreasing in dimension, design of the RF front-end becomes more complex. It is common for a single handheld device to operate on a plethora of frequency bands, utilize multiple antennae, and be subjected to a variety of environments. One complexity in particular which arises from these factors is that of impedance mismatch. Recently, tunable impedance matching networks have begun to be implemented to address this problem. This dissertation presents the first in-depth study on the frequency tuning range of tunable impedance matching networks. Both the fundamental limitations of ideal networks as well as practical considerations for design and implementation are addressed. Specifically, distributed matching networks with a single tuning element are investigated for use with parallel resistor-capacitor and series resistor-inductor loads. Analytical formulas are developed to directly calculate the frequency tuning range TR of ideal topologies. The theoretical limit of TR for these topologies is presented and discussed. Additional formulas are developed which address limitations in transmission line characteristic impedance and varactor range. Equations to predict loss due to varactor quality factor are demonstrated and the ability of parasitics to both increase and decrease TR are shown. Measured results exemplify i) the potential to develop matching networks with a small impact from parasitics, ii) the need for accurate knowledge of parasitics when designing near transition points in optimal parameters, iii) the importance of using a transmission line with the right characteristic impedance, and iv) the ability to achieve extremely low loss at the design frequency with a lossy varactor under the right conditions (measured loss of -0.07 dB). In the area of application, tunable matching networks are designed and measured for mobile handset antennas, demonstrating up to a 3 dB improvement in power delivered to a planar inverted-F antenna and up to 4--5.6 dB improvement in power delivered to the iPhone(TM) antenna. Additionally, a single-varactor matching network is measured to achieve greater tuning range than a two-varactor matching network (> 824--960 MHz versus 850--915 MHz) and yield higher power handling. Addressing miniaturization, an accurate model of metal loss in planar integrated inductors for low-loss substrates is developed and demonstrated. Finally, immediate future research directions are suggested: i) expanding the topologies, tuning elements, and loads analyzed; ii) performing a deep study into parasitics; and iii) investigating power handling with various varactor technologies.

Split-Ring Resonator Loaded Miniaturised Slot for the Slotted Waveguide Antenna Stiffened Structure

DTIC Science & Technology

2011-03-01

explains the material analysis of BST varactors using the new sputterer so the varactors can be fabricated at RMIT university and utilised for the SRR...44-0093 (*) - Barium Strontium Titanium Oxide - Ba0.77Sr0.23TiO3 - Y: 0.10 % - d x by: 1. - WL: 1.5406 - Tetragonal - Operations: Import D:\\Sensors...unknown unknown BST on sapphire - 2 44-0093 (*) - Barium Strontium Titanium Oxide - Ba0.77Sr0.23TiO3 - Y: 0.10 % - d x by: 1. - WL: 1.5406 - 0

Thermionic emission current in a single barrier varactor

NASA Technical Reports Server (NTRS)

Hjelmgren, Hans; East, Jack; Kollberg, Erik

1992-01-01

From I-V measurements on Single Barrier Varactors (SBV) at different temperatures we concluded that thermionic emission across the barrier of the actual device is mainly due to transport through the X band. The same structure was also modeled with a one-dimensional drift-diffusion model, including a 'boundary condition' for thermionic emission across the heterojunction interface. By including thermionic field emission through the top of the triangular barrier of a biased diode and the effect of a non-abrupt interface at the heterojunction, we obtained good agreement between the modeled and measured I-V characteristics.

Novel RF and microwave components employing ferroelectric and solid-state tunable capacitors for multi-functional wireless communication systems

NASA Astrophysics Data System (ADS)

Tombak, Ali

The recent advancement in wireless communications demands an ever increasing improvement in the system performance and functionality with a reduced size and cost. This thesis demonstrates novel RF and microwave components based on ferroelectric and solid-state based tunable capacitor (varactor) technologies for the design of low-cost, small-size and multi-functional wireless communication systems. These include tunable lumped element VHF filters based on ferroelectric varactors, a beam-steering technique which, unlike conventional systems, does not require separate power divider and phase shifters, and a predistortion linearization technique that uses a varactor based tunable R-L-C resonator. Among various ferroelectric materials, Barium Strontium Titanate (BST) is actively being studied for the fabrication of high performance varactors at RF and microwave frequencies. BST based tunable capacitors are presented with typical tunabilities of 4.2:1 with the application of 5 to 10 V DC bias voltages and typical loss tangents in the range of 0.003--0.009 at VHF frequencies. Tunable lumped element lowpass and bandpass VHF filters based on BST varactors are also demonstrated with tunabilities of 40% and 57%, respectively. A new beam-steering technique is developed based on the extended resonance power dividing technique. Phased arrays based on this technique do not require separate power divider and phase shifters. Instead, the power division and phase shifting circuits are combined into a single circuit, which utilizes tunable capacitors. This results in a substantial reduction in the circuit complexity and cost. Phased arrays based on this technique can be employed in mobile multimedia services and automotive collision avoidance radars. A 2-GHz 4-antenna and a 10-GHz 8-antenna extended resonance phased arrays are demonstrated with scan ranges of 20 degrees and 18 degrees, respectively. A new predistortion linearization technique for the linearization of RF/microwave power amplifiers is also presented. This technique utilizes a varactor based tunable R-L-C resonator in shunt configuration. Due to the small number of circuit elements required, linearizers based on this technique offer low-cost and simple circuitry, hence can be utilized in handheld and cellular applications. A 1.8 GHz power amplifier with 9 dB gain is linearized using this technique. The linearizer improves the output 1-dB compression point of the power amplifier from 21 to 22.8 dBm. Adjacent channel power ratio (ACPR) is improved approximately 11 dB at an output RF power level of 17.5 dBm. The thesis is concluded by summarizing the main achievements and discussing the future work directions.

Capacitance-Based Dosimetry of Co-60 Radiation using Fully-Depleted Silicon-on-Insulator Devices

PubMed Central

Li, Yulong; Porter, Warren M.; Ma, Rui; Reynolds, Margaret A.; Gerbi, Bruce J.; Koester, Steven J.

2015-01-01

The capacitance based sensing of fully-depleted silicon-on-insulator (FDSOI) variable capacitors for Co-60 gamma radiation is investigated. Linear response of the capacitance is observed for radiation dose up to 64 Gy, while the percent capacitance change per unit dose is as high as 0.24 %/Gy. An analytical model is developed to study the operational principles of the varactors and the maximum sensitivity as a function of frequency is determined. The results show that FDSOI varactor dosimeters have potential for extremely-high sensitivity as well as the potential for high frequency operation in applications such as wireless radiation sensing. PMID:27840451

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

NASA Technical Reports Server (NTRS)

Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

2001-01-01

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Non-Uniform Bias Enhancement of a Varactor-Tuned FSS used with a Low Profile 2.4 GHz Dipole Antenna

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas M.; Miranda, Felix A.

2012-01-01

In this paper a low profile antenna using a nonuniformly biased varactor-tuned frequency selective surface (FSS) is presented. The tunable FSS avoids the use of vias and has a simplified DC bias network. The voltages to the DC bias ports can be varied independently allowing adjustment in the frequency response and enhanced radiation properties. The measured data demonstrate tunability from 2.15 GHz to 2.63 GHz with peak efficiencies that range from 50% to 90% and instantaneous bandwidths of 50 MHz to 280 MHz within the tuning range. The total antenna thickness is approximately lambda/45.

Modulation linearization of a frequency-modulated voltage controlled oscillator, part 3

NASA Technical Reports Server (NTRS)

Honnell, M. A.

1975-01-01

An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.

Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

PubMed Central

Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

2016-01-01

The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

Development and fabrication of S-band chip varactor parametric amplifier

NASA Technical Reports Server (NTRS)

Kramer, E.

1974-01-01

A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design.

A Frequency Reconfigurable MIMO Antenna System for Cognitive Radio Applications

NASA Astrophysics Data System (ADS)

Raza, A.; Khan, Muhammad U.; Tahir, Farooq A.

2017-10-01

In this paper, a two element frequency reconfigurable multiple-input-multiple-output (MIMO) antenna system is presented. The proposed antenna consists of miniaturized patch antenna elements, loaded with varactor diodes to achieve frequency reconfigurability. The antenna has bandwidth of 30 MHz and provides a smooth frequency sweep from 2.12 GHz to 2.4 GHz by varying the reverse bias voltage of varactor diode. The antenna is designed on an FR4 substrate and occupies a space of 50×100 × 0.8 mm3. The antenna is analyzed for its far-field characteristics as well as for MIMO performance parameters. Designed antenna showed good performance and is suitable for cognitive radios (CR) applications.

Energetic distributions of interface states Dit(phi sub s) of MOS transistors in extension of Kuhn's quasistatic C(V)-method

NASA Astrophysics Data System (ADS)

Krautschneider, W.; Wagemann, H. G.

1983-10-01

Kuhn's quasi-static C(V)-method has been extended to MOS transistors by considering the capacitances of the source and drain p-n junctions additionally to the MOS varactor circuit model. The width of the space charge layers w(phi sub s) is calculated as a function of the surface potential phi sub s and applied to the MOS capacitance as a function of the gate voltage. Capacitance behavior for different channel length is presented as a model and compared to measurement results and evaluations of energetic distributions of interface states Dit(phi sub s) for MOS transistor and MOS varactor on the same chip.

Interfacial varactor characteristics of ferroelectric thin films on high-resistivity Si substrate

NASA Astrophysics Data System (ADS)

Lan, Wen-An; Wang, Tsan-Chun; Huang, Ling-Hui; Wu, Tai-Bor

2006-07-01

Ferroelectric Ba(Zr0.25Ti0.75)O3 (BZT) thin films were deposited on high-resistivity Si substrate without or with inserting a high-k buffer layer of Ta2O5. The varactor characteristics of the BZT capacitors in metal-oxide-semiconductor structure were studied. At low frequency (1MHz ), the capacitors exhibit a negatively tunable characteristic, i.e., [C(V)-C(0)]/C(0)<0, against dc bias V, but opposite tunable characteristics were found at microwave frequencies (>1GHz). The change of voltage-dependent characteristic is attributed to the effect of low-resistivity interface induced by charged defects formed from interfacial oxidation of Si in screening the microwave from penetrating into the bulk of Si.

Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

NASA Astrophysics Data System (ADS)

Deen, David A.; Osinsky, Andrei; Miller, Ross

2014-03-01

A capacitive wireless sensing scheme is developed that utilizes an AlN/GaN-based dual-channel varactor. The dual-channel heterostructure affords two capacitance plateaus within the capacitance-voltage (CV) characteristic, owing to the two parallel two-dimensional electron gases (2DEGs) located at respective AlN/GaN interfaces. The capacitance plateaus are leveraged for the definition of two resonant states of the sensor when implemented in an inductively-coupled resonant LRC network for wireless readout. The physics-based CV model is compared with published experimental results, which serve as a basis for the sensor embodiment. The bimodal resonant sensor is befitting for a broad application space ranging from gas, electrostatic, and piezoelectric sensors to biological and chemical detection.

Monolithic high voltage nonlinear transmission line fabrication process

DOEpatents

Cooper, Gregory A.

1994-01-01

A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

Pass-band reconfigurable spoof surface plasmon polaritons

NASA Astrophysics Data System (ADS)

Zhang, Hao Chi; He, Pei Hang; Gao, Xinxin; Tang, Wen Xuan; Cui, Tie Jun

2018-04-01

In this paper, we introduce a new scheme to construct the band-pass tunable filter based on the band-pass reconfigurable spoof surface plasmon polaritons (SPPs), whose cut-off frequencies at both sides of the passband can be tuned through changing the direct current (DC) bias of varactors. Compared to traditional technology (e.g. microstrip filters), the spoof SPP structure can provide more tight field confinement and more significant field enhancement, which is extremely valuable for many system applications. In order to achieve this scheme, we proposed a specially designed SPP filter integrated with varactors and DC bias feeding structure to support the spoof SPP passband reconfiguration. Furthermore, the full-wave simulated result verifies the outstanding performance on both efficiency and reconfiguration, which has the potential to be widely used in advanced intelligent systems.

A submillimeter tripler using a quasi-waveguide structure

NASA Technical Reports Server (NTRS)

Erickson, Neal R.; Cortes-Medellin, German

1992-01-01

A new type of frequency multiplier structure is being developed which is suitable for application at frequencies above 1 THz. This structure preserves some of the properties of waveguide for mode control, yet is not truly single mode. The device resembles a sectoral horn, with a varactor diode mounted near the throat. Input and output coupling are through the same aperture, requiring a quasi-optical diplexer. Initial tests are directed at building a tripler at 500 GHz, for comparison with waveguide structures. The diplexer is a blazed diffraction grating with appropriate focusing optics. Model studies show that the impedance match to a varactor should be good, and initial tests of the beam patterns of the prototype indicate that optical coupling efficiency should be very high. The structure also has the potential for use as a fundamental mixer, or as a third harmonic mixer.

An accurate MOS measurement procedure for work function difference in the Al/SiO 2/Si system

NASA Astrophysics Data System (ADS)

Krautschneider, W. H.; Laschinski, J.; Seifert, W.; Wagemann, H. G.

1986-05-01

Determination of Al/Si work function difference φMS is achieved by means of capacitance measurements of differently manufactured MOS varactors (Al/SiO 2/ n-Si) with variable oxide thickness ("step varactor"). For the φMS evaluation the influences of interface (fQ it) and oxide (ifQ f) charges have been considered, and models of their charges and dipole behaviour are described. Midgap band bending has been chosen as best condition for the evaluation of ΦMSO as basic amount of work function difference with negligible interference of Qit. Plots of Φ MSvs ψS for numerous specimens indicate that, usually, dipole voltage ΔΦ is closely connected to ΦMS within the voltage drop across the MOS varactor according to ΦMS = ΦMSO + qΔΦ. For the evaluation of dipole voltage ΔΦ models of charge density Qit within interface states are presented which assume dominating donor or acceptor states within the two halves of the band gap. Corrections of impurity homogeneity across the wafer and of impurity profile into the depth of the chips are considered. For the work function difference extrapolated to intrinsic density, ΦMSO = (-0.26 ± 0.05) eV holds. Additionally from midgap through inversion of n-Si, dipole voltage was observed ( ΔΦ = 0.015 V) which was caused by interface states and oxide charge 3 nm apart from one another.

Microwave device investigations

NASA Technical Reports Server (NTRS)

Choudhury, K. K. D.; Haddad, G. I.; Kwok, S. P.; Masnari, N. A.; Trew, R. J.

1972-01-01

Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.

Topics in the optimization of millimeter-wave mixers

NASA Technical Reports Server (NTRS)

Siegel, P. H.; Kerr, A. R.; Hwang, W.

1984-01-01

A user oriented computer program for the analysis of single-ended Schottky diode mixers is described. The program is used to compute the performance of a 140 to 220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz is obtained. A sensitivity analysis indicates the importance of various diode and mount characteristics on the mixer performance. A computer program for the analysis of varactor diode multipliers is described. The diode operates in either the reverse biased varactor mode or with substantial forward current flow where the conversion mechanism is predominantly resistive. A description and analysis of a new H-plane rectangular waveguide transformer is reported. The transformer is made quickly and easily in split-block waveguide using a standard slitting saw. It is particularly suited for use in the millimeter-wave band, replacing conventional electroformed stepped transformers. A theoretical analysis of the transformer is given and good agreement is obtained with measurements made at X-band.

Varactor with integrated micro-discharge source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Manginell, Ronald P.; Moorman, Matthew W.

2016-10-18

An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of themore » np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).« less

Progress on single barrier varactors for submillimeter wave power generation

NASA Technical Reports Server (NTRS)

Nilsen, Svein M.; Groenqvist, Hans; Hjelmgren, Hans; Rydberg, Anders; Kollberg, Erik L.

1992-01-01

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Integrated-circuit balanced parametric amplifier

NASA Technical Reports Server (NTRS)

Dickens, L. E.

1975-01-01

Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

Microwave device investigations

NASA Technical Reports Server (NTRS)

Haddad, G. I.; Lomax, R. J.; Masnari, N. A.; Shabde, S. E.

1971-01-01

Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes.

Rogue waves generation in a left-handed nonlinear transmission line with series varactor diodes

NASA Astrophysics Data System (ADS)

Onana Essama, B. G.; Atangana, J.; Biya Motto, F.; Mokhtari, B.; Cherkaoui Eddeqaqi, N.; Kofane, Timoleon C.

2014-07-01

We investigate the electromagnetic wave behavior and its characterization using collective variables technique. Second-order dispersion, first- and second-order nonlinearities, which strongly act in a left-handed nonlinear transmission line with series varactor diodes, are taken into account. Four frequency ranges have been found. The first one gives the so-called energetic soliton due to a perfect combination of second-order dispersion and first-order nonlinearity. The second frequency range presents a dispersive soliton leading to the collapse of the electromagnetic wave at the third frequency range. But the fourth one shows physical conditions which are able to provoke the appearance of wave trains generation with some particular waves, the rogue waves. Moreover, we demonstrate that the number of rogue waves increases with frequency. The soliton, thereafter, gains a relative stability when second-order nonlinearity comes into play with some specific values in the fourth frequency range. Furthermore, the stability conditions of the electromagnetic wave at high frequencies have been also discussed.

RF MEMS and Their Applications in NASA's Space Communication Systems

NASA Technical Reports Server (NTRS)

Williams, W. Daniel; Ponchak, George E.; Simons, Rainee N.; Zaman, Afroz; Kory, Carol; Wintucky, Edwin; Wilson, Jeffrey D.; Scardelletti, Maximilian; Lee, Richard; Nguyen, Hung

2001-01-01

Radio frequency (RF) and microwave communication systems rely on frequency, amplitude, and phase control circuits to efficiently use the available spectrum. Phase control circuits are required for electronically scanning phase array antennas that enable radiation pattern shaping, scanning, and hopping. Two types of phase shifters, which are the phase control circuits, are most often used. The first is comprised of two circuits with different phase characteristics such as two transmission lines of different lengths or a high pass and low pass filter and a switch that directs the RF power through one of the two circuits. Alternatively, a variable capacitor, or varactor, is used to change the effective electrical path length of a transmission line, which changes the phase characteristics. Filter banks are required for the diplexer at the front end of wide band communication satellites. These filters greatly increase the size and mass of the RF/microwave systems, but smaller diplexers may be made with a low loss varactor or a group of capacitors, a switch and an inductor.

0.5 V 5.8 GHz highly linear current-reuse voltage-controlled oscillator with back-gate tuning technique

NASA Astrophysics Data System (ADS)

Ikeda, Sho; Lee, Sang-Yeop; Ito, Hiroyuki; Ishihara, Noboru; Masu, Kazuya

2015-04-01

In this paper, we present a voltage-controlled oscillator (VCO), which achieves highly linear frequency tuning under a low supply voltage of 0.5 V. To obtain the linear frequency tuning of a VCO, the high linearity of the threshold voltage of a varactor versus its back-gate voltage is utilized. This enables the linear capacitance tuning of the varactor; thus, a highly linear VCO can be achieved. In addition, to decrease the power consumption of the VCO, a current-reuse structure is employed as a cross-coupled pair. The proposed VCO was fabricated using a 65 nm Si complementary metal oxide semiconductor (CMOS) process. It shows the ratio of the maximum VCO gain (KVCO) to the minimum one to be 1.28. The dc power consumption is 0.33 mW at a supply voltage of 0.5 V. The measured phase noise at 10 MHz offset is -123 dBc/Hz at an output frequency of 5.8 GHz.

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Metal-insulator-semiconductor capacitors with bismuth oxide as insulator

NASA Astrophysics Data System (ADS)

Raju, T. A.; Talwai, A. S.

1981-07-01

Metal-insulator-semiconductor capacitors using aluminum Bi2O3 and silicon have been studied for varactor applications. Reactively sputtered Bi2O3 films which under suitable proportions of oxygen and argon and had high resistivity suitable for device applications showed a dielectric constant of 25.

A Survey of Solid-State Microwave Power Devices

DTIC Science & Technology

1977-04-29

from the channel by a thin oxide layer (insulated gate FET or IGFET), it may be a diffused junction at the top of the channel (junction FET or JFET...greater than 100 GHz. YIG-tuned units are finding increasing use as extremely stable sources, whereas varactor tuning is used where tuning speed is

A wide-range 22-GHz LC-based CMOS voltage-controlled oscillator

NASA Astrophysics Data System (ADS)

Gharbieh, Karam; Ranneh, Mohammed; Abugharbieh, Khaldoon

2018-06-01

This work presents a novel voltage-controlled oscillator (VCO) design and simulations that combine a varactor bank with a transformer in the LC tank to achieve a high-frequency range. While the varactor bank is responsible for changing the capacitance in the LC tank, the transformer acts as a means to change the value of the inductance, hence allowing tune-ability in the two main components of the VCO. A control mechanism utilises a mixed-mode circuit consisting of comparators and a state machine. It allows efficient tuning of the VCO by controlling the capacitance and transformer in the LC tank. The VCO has a 10.75-22.43 GHz frequency range and the VCO gain, KVCO, is kept at a low value ranging from 98.6 to 175.7 MHz/V. The simulated phase noise is -111 dBc/Hz at 1 MHz offset from the 10.75 GHz oscillation frequency. The circuit is designed and simulated in 28 nm CMOS technology and uses a 1 V supply drawing a typical power of 14.74 mW.

Parametric traveling wave amplifier with a low pump frequency

NASA Astrophysics Data System (ADS)

Marchenko, V. F.; Streltsov, A. M.; Zhmurov, S. E.

1983-01-01

Consideration is given to the model of a parametric traveling wave amplifier with a cubic nonlinearity in the form of an LF filter with MOS varactors. The operation of the amplifier is analyzed with allowance for wave damping and nonlinearity saturation, and the nonlinear mode of operation is examined. Experimental results are discussed, with emphasis on the amplitude-frequency response characteristics.

Electronic circuits and systems: A compilation. [including integrated circuits, logic circuits, varactor diode circuits, low pass filters, and optical equipment circuits

NASA Technical Reports Server (NTRS)

1975-01-01

Technological information is presented electronic circuits and systems which have potential utility outside the aerospace community. Topics discussed include circuit components such as filters, converters, and integrators, circuits designed for use with specific equipment or systems, and circuits designed primarily for use with optical equipment or displays.

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

NASA Technical Reports Server (NTRS)

Deo, Naresh C.

1990-01-01

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

Direct EPR irradiation of a sample using a quartz oscillator operating at 250 MHz for EPR measurements.

PubMed

Yokoyama, Hidekatsu

2012-01-01

Direct irradiation of a sample using a quartz oscillator operating at 250 MHz was performed for EPR measurements. Because a quartz oscillator is a frequency fixed oscillator, the operating frequency of an EPR resonator (loop-gap type) was tuned to that of the quartz oscillator by using a single-turn coil with a varactor diode attached (frequency shift coil). Because the frequency shift coil was mobile, the distance between the EPR resonator and the coil could be changed. Coarse control of the resonant frequency was achieved by changing this distance mechanically, while fine frequency control was implemented by changing the capacitance of the varactor electrically. In this condition, EPR measurements of a phantom (comprised of agar with a nitroxide radical and physiological saline solution) were made. To compare the presented method with a conventional method, the EPR measurements were also done by using a synthesizer at the same EPR frequency. In the conventional method, the noise level increased at high irradiation power. Because such an increase in the noise was not observed in the presented method, high sensitivity was obtained at high irradiation power. Copyright © 2011 Elsevier Inc. All rights reserved.

A Fully-Passive Wireless Microsystem for Recording of Neuropotentials using RF Backscattering Methods

PubMed Central

Xu, Wencheng; Shekhar, Sameer; Abbaspour-Tamijani, Abbas; Towe, Bruce C.; Miranda, Félix A.; Chae, Junseok

2011-01-01

The ability to safely monitor neuropotentials is essential in establishing methods to study the brain. Current research focuses on the wireless telemetry aspect of implantable sensors in order to make these devices ubiquitous and safe. Chronic implants necessitate superior reliability and durability of the integrated electronics. The power consumption of implanted electronics must also be limited to within several milliwatts to microwatts to minimize heat trauma in the human body. In order to address these severe requirements, we developed an entirely passive and wireless microsystem for recording neuropotentials. An external interrogator supplies a fundamental microwave carrier to the microsystem. The microsystem comprises varactors that perform nonlinear mixing of neuropotential and fundamental carrier signals. The varactors generate third-order mixing products that are wirelessly backscattered to the external interrogator where the original neuropotential signals are recovered. Performance of the neuro-recording microsystem was demonstrated by wireless recording of emulated and in vivo neuropotentials. The obtained results were wireless recovery of neuropotentials as low as approximately 500 microvolts peak-to-peak (μVpp) with a bandwidth of 10 Hz to 3 kHz (for emulated signals) and with 128 epoch signal averaging of repetitive signals (for in vivo signals). PMID:22267898

A study of microwave downcoverters operating in the K sub u band

NASA Technical Reports Server (NTRS)

Fellers, R. G.; Simpson, T. L.; Tseng, B.

1982-01-01

A computer program for parametric amplifier design is developed with special emphasis on practical design considerations for microwave integrated circuit degenerate amplifiers. Precision measurement techniques are developed to obtain a more realistic varactor equivalent circuit. The existing theory of a parametric amplifier is modified to include the equivalent circuit, and microwave properties, such as loss characteristics and circuit discontinuities are investigated.

Scattering and Imaging of Nonlinearly Loaded Antenna Structures in Half-Space and Complex-Room Environments

DTIC Science & Technology

2014-09-01

ABSTRACT The electromagnetic scattering responses of nonlinearly loaded antenna structures excited by single- tone or multi- tone incident fields are...3  Fig. 2 Monostatic scattered electric field strength for center array element: a) Single- tone excitation at 300 MHz...three diode-loaded targets and b) Two- tone excitation at 300 MHz and 305 MHz; two varactor-loaded targets

Passivation on High Q Acoustic Strain Sensor for Accelerometer.

DTIC Science & Technology

1984-11-01

selection of passivation layers. Preliminary results indicated that V203 , (yttrium oxide ) and AIN (aluminum nitride) were the best materials for...thickness selection of passivation layers. Preliminary results indicated that Y203 (yttrium oxide ) and AIN (aluminum nitride) were the best materials...crystal, in this case a parabolic temperature characteristic. Several circuits were designed using varactor diode phase shifting networks. FOjcTl Ta tor

Design and Analysis of Broad-Band Fixed-Tuned Submillimeter-Waveguide Multipliers using MMIC Style Circuit Topology

NASA Technical Reports Server (NTRS)

Bruston, J.; Kim, M.; Martin, S. C.; Mehdi, I.; Smith, R. P.; Siegel, P. H.

1996-01-01

The design and analysis of varactor diode doubler, quadrupler and cascaded doubler circuits for 320 and 640 GHz have been completed. A new approach has been employed to produce a tunerless waveguide mount with a very flexible, frequency scaleable, MMIC style multiplier circuit. The concept, design, predicted performance and measurements on some of the constituent mount elements are presented.

Distortion of the convolution spectra of PSK signals in frequency multipliers

NASA Astrophysics Data System (ADS)

Viniarskii, V. F.; Marchenko, V. F.; Petrin, Iu. M.

1983-09-01

The influence of the input and output circuits of frequency multipliers on the convolution spectrum of binary and ternary PSK signals is examined. It is shown that transient processes caused by the phase switching of the input signal lead to the amplitude-phase modulation of the harmonic signal. Experimental results are presented on the balance circuits of MOS varactor doublers and triplers.

Tunable Superconducting Split Ring Resonators

DTIC Science & Technology

2012-09-19

microwave field-strength distortion and quality- factor dependence on tuning. Feedback for changes in design and fabrication, (4) design and fabrication...elements. For many applications tuning of the resonance frequency of the SRR is needed. Classically this is done by varactor diodes. Their capacitance ... capacitance of the gap to form a resonator circuit. The advantage of such a circuit is its quite low resonance frequency compared to other structures

Electromagnetic Component Research

DTIC Science & Technology

2009-12-01

capacitor was designed so that the four capacitance states are approximately equally spaced. Fig. 8 shows a photomicrograph of the varactor and the...dimensional Millimeter-wave Coaxial Line with Coplanar Transition for Probing (b) 60 CI·lz Branch Line Coupler, Measured S-paramclers Agree with Design C urves... designed for compatibi lity with optical fiber installations and can be attached to structures to measure their bending strains. The sensors can be

Non-Optical Applications of Photonic Crystal Structures

DTIC Science & Technology

2005-02-23

antenna created by covering a metallic ground plane with a periodic band-gap structure. By incorporating varactor diodes into the structure, they have...defects can be created in alumina band-gap materials by use of laser machining. (a) 1ncalizcd A 1II Cavity Fig 10 - (a) Schematics of propagation of...The primary applications are in dentistry and dermatology . The scale length of Terahertz devices simplifies the problems of fabrication and

Development of a Self Powered Vehicle Detector

DTIC Science & Technology

1978-10-01

Low Power RFTelemetry Link, Audio Tone kncoder/Decoder, 9mn’dlrectional Microstrip Antenna, RF Oscillator , RF Transmitter, Battery/ Solar Cell Tests...tuned Colpitts oscillator using a fundamental mode crystal, a reactance modulator (varactor diode), and a collector tank circuit tuned to the second...papers discussing this type of VCXO. The basic Colpitts oscillator equivalent circuit is shown in Figure 29 having a collector tank tuned to the 2nd

60 GHz Tapered Transmission Line Resonators

DTIC Science & Technology

2008-09-15

and out small capacitors, using varactors for part of the capacitance, or both. However, at high frequencies the size of these lumped components...the full substrate stack is made up of many oxide layers with different EM characteristics. To speed up simulation time it is imperative to simplify...the substrate stackup dramatically. This was achieved by using only one oxide layer which encompasses all metal layers. The character- istics of this

Segmented surface coil resonator for in vivo EPR applications at 1.1GHz.

PubMed

Petryakov, Sergey; Samouilov, Alexandre; Chzhan-Roytenberg, Michael; Kesselring, Eric; Sun, Ziqi; Zweier, Jay L

2009-05-01

A four-loop segmented surface coil resonator (SSCR) with electronic frequency and coupling adjustments was constructed with 18mm aperture and loading capability suitable for in vivo Electron Paramagnetic Resonance (EPR) spectroscopy and imaging applications at L-band. Increased sample volume and loading capability were achieved by employing a multi-loop three-dimensional surface coil structure. Symmetrical design of the resonator with coupling to each loop resulted in high homogeneity of RF magnetic field. Parallel loops were coupled to the feeder cable via balancing circuitry containing varactor diodes for electronic coupling and tuning over a wide range of loading conditions. Manually adjusted high Q trimmer capacitors were used for initial tuning with subsequent tuning electronically controlled using varactor diodes. This design provides transparency and homogeneity of magnetic field modulation in the sample volume, while matching components are shielded to minimize interference with modulation and ambient RF fields. It can accommodate lossy samples up to 90% of its aperture with high homogeneity of RF and modulation magnetic fields and can function as a surface loop or a slice volume resonator. Along with an outer coaxial NMR surface coil, the SSCR enabled EPR/NMR co-imaging of paramagnetic probes in living rats to a depth of 20mm.

Application of RF varactor using Ba(x)Sr(1-x)TiO3/TiO2/HR-Si substrate for reconfigurable radio.

PubMed

Kim, Ki-Byoung; Park, Chul-Soon

2007-11-01

In this paper, the potential feasibility of integrating Ba(x)Sr(1-x)TiO3 (BST) films into Si wafer by adopting tunable interdigital capacitor (IDC) with TiO2 thin film buffer layer and a RF tunable active bandpass filter (BPF) using BST based capacitor are proposed. TiO2 as a buffer layer is grown onto Si substrate by atomic layer deposition (ALD) and the interdigital capacitor on BST(500 nm)/TiO2 (50 nm)/HR-Si is fabricated. BST interdigital tunable capacitor integrated on HR-Si substrate with high tunability and low loss tangent are characterized for their microwave performances. BST/TiO2/HR-Si IDC shows much enhanced tunability values of 40% and commutation quality factor (CQF) of 56.71. A resonator consists of an active capacitance circuit together with a BST varactor. The active capacitor is made of a field effect transistor (FET) that exhibits negative resistance as well as capacitance. The measured second order active BPF shows bandwidth of 110 MHz, insertion loss of about 1 dB at the 1.81 GHz center frequency and tuning frequency of 230 MHz (1.81-2.04 GHz).

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Cristea, D.; Meyler, B.; Yofis, S.; Shneider, Y.; Atiya, G.; Cohen-Hyams, T.; Kauffmann, Y.; Kaplan, W. D.; Eisenstein, G.

2015-01-01

We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO2-HfO2. Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible.

Segmented surface coil resonator for in vivo EPR applications at 1.1 GHz

PubMed Central

Petryakov, Sergey; Samouilov, Alexandre; Chzhan-Roytenberg, Michael; Kesselring, Eric; Sun, Ziqi; Zweier, Jay L.

2010-01-01

A four-loop segmented surface coil resonator (SSCR) with electronic frequency and coupling adjustments was constructed with 18 mm aperture and loading capability suitable for in vivo Electron Paramagnetic Resonance (EPR) spectroscopy and imaging applications at L-band. Increased sample volume and loading capability were achieved by employing a multi-loop three-dimensional surface coil structure. Symmetrical design of the resonator with coupling to each loop resulted in high homogeneity of RF magnetic field. Parallel loops were coupled to the feeder cable via balancing circuitry containing varactor diodes for electronic coupling and tuning over a wide range of loading conditions. Manually adjusted high Q trimmer capacitors were used for initial tuning with subsequent tuning electronically controlled using varactor diodes. This design provides transparency and homogeneity of magnetic field modulation in the sample volume, while matching components are shielded to minimize interference with modulation and ambient RF fields. It can accommodate lossy samples up to 90% of its aperture with high homogeneity of RF and modulation magnetic fields and can function as a surface loop or a slice volume resonator. Along with an outer coaxial NMR surface coil, the SSCR enabled EPR/NMR co-imaging of paramagnetic probes in living rats to a depth of 20 mm. PMID:19268615

Electromagnetic energy coupling mechanism with matrix architecture control

NASA Technical Reports Server (NTRS)

Hughes, Eli (Inventor); Knowles, Gareth (Inventor)

2006-01-01

The present invention relates generally to reconfigurable, solid-state matrix arrays comprising multiple rows and columns of reconfigurable secondary mechanisms that are independently tuned. Specifically, the invention relates to reconfigurable devices comprising multiple, solid-state mechanisms characterized by at least one voltage-varied parameter disposed within a flexible, multi-laminate film, which are suitable for use as magnetic conductors, ground surfaces, antennas, varactors, ferrotunable substrates, or other active or passive electronic mechanisms.

Wide-Band Monolithic Acoustoelectric Memory Correlators.

DTIC Science & Technology

1982-11-01

piezoelectric and non- earlier analysis of thin- oxide varactors . The new analysis ex- conducting. Tapped structures which satisfy this criterion are plains...for tapped LiNbO3/metal- oxide - important realization. The logical consequence is that only silicon [26] structures is, in fact, not applicable here. It...Clarke, "The GaAs SAW depletion layer of’ the diode array. A more complex structure, diode storage correlalor," in 1980 Ultrasonics Synp. Proc., pp a GaAs

A New Ferroelectric Varactor from Water Based Inorganic Precursors

DTIC Science & Technology

2003-04-03

See Equation 2). 0 0 4 OH +-)4T H13< Equation 2. Idealized Reaction of Titanium Isopropoxide with 2-ethylhexanoic acid. Inconsistent results with the...Equation 3). Equation 3. Reaction of 2-ethylhexanoic anhydride with Titanium Isopropoxide We have made over one hundred batches of both BST and SBTN MOD...aliphatic acids used in the more common MOD precursors. Equation 4 shows a comparison of the decomposition products of Titanium MOD precursors made from 2

Loch Linnhe Experiment Data Summary,

DTIC Science & Technology

1987-11-23

transmitters whereas the Ka-band system uses 2 Varactor -tuned Gunn diodes. Since both systems are phase-locked using frequency stabilizers and synchronizers...in a very thin, but tough, oxide being KWOH-I 12387 5 UN .,n built up on the wire surface. By keeping the high voltage on during operation of the... oxide layer can be damaged by shorting the DC voltage to ground. With this problem in mind the three wave height gauges used in the experiment were

Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

DTIC Science & Technology

1982-05-01

semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal

A fractional-N PLL with small ΔK vco wideband LC-VCO and current-matching CP for M-DTV systems

NASA Astrophysics Data System (ADS)

Gao, Haijun; Yan, Yuepeng; Du, Zhankun; Guo, Guiliang; Zeng, Longyue

2011-06-01

An Σ-Δ fractional-N frequency synthesiser with small K vco-variation wideband LC voltage controlled oscillator (LC-VCO) and current-matching charge pump (CP) for Mobile Digital television Systems is presented. To achieve small VCO-gain (K vco) variation, a parallel switched varactor array is proposed to the conventional wideband LC-VCO with switched capacitor array, the value of the switched varactor is pre-set and both arrays are controlled by the same switching code. Perfect current matching and good stability are obtained by the improved CP with an added bias branch circuit for low reference spur. The chip was fabricated in a Taiwan Semiconductor Manufacturing Company (TSMC) 0.25 µm complementary metal-oxide-semiconductor process and draws 12 mA from a 2.5 V supply voltage. The synthesiser covers a wide tuning range from 0.82 to 1.85 GHz with two integrated LC-VCOs, and each VCO achieves a K vco variation of less than 16% with a tuning range of more than 46%. The current mismatch of CP is as low as 1.2%. The measured close-in and out-of-band phase noise are -83.5 dBc/Hz@10 kHz and -127 dBc/Hz@1 MHz, respectively, the reference spur is -76.3 dBc.

Study of HV Dielectrics for High Frequency Operation in Linear & Nonlinear Transmission Lines & Simulation & Development of Hybrid Nonlinear Lines for RF Generation

DTIC Science & Technology

2015-08-27

applied reverse voltage [8], [9]. In this report, the experimental results of a varactor diode NLTL built with 30 sections are presented. Besides, Spice ...capacitive line (NLCL) using commercial BT and PZT ceramic capacitors. Corresponding NLCL Spice simulation is provided for comparison with experimental...the output pulse. In special for PZT, Spice simulation of a line with respective linear capacitors illustrates its weak nonlinearity as the

Small signal amplifiers and converters for millimeter wave Satcom systems

NASA Technical Reports Server (NTRS)

Okean, H. C.

1979-01-01

This paper describes the current state of the art and the various design tradeoffs encompassing the variety of small signal active circuit 'building blocks' deployed in millimeter wave Satcom receivers and transmitters. Included in this catagory are such low noise receiver components as parametric and FET amplifiers and low loss mixer downconverters as well as low level transmitter driver components such as resistive and varactor upconverters. Current and projected state of the art performance data will be presented along with specific examples of operating hardware.

Unclassified Publications of Lincoln Laboratory, Volume 10.

DTIC Science & Technology

1984-12-31

Plasma-Deposited Si 3N4 Turner, G.W. J. Electrochem. Soc., .’ - as an Oxidation Mask in the Connors, M.K. Vol. 131, No. 5, May Fabrication of GaAs 1984...Time Interval Counter 25-27 May 1982, to Obtain Phase pp. 4-1 - 4-4 6115 Complex Reflectivity and Goldner, R.B. SPIE, Vol. 401, Thin Film Refractive...Doublers with Series Courtney, W.E. Millimeter Wave Connected Varactor Diodes Mahoney, L.J. Monolithic Circuits "- - McClelland, R.W. Symp., Digest of

InAs-based Hterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Planar varactor frequency multiplier devices with blocking barrier

NASA Technical Reports Server (NTRS)

Lieneweg, Udo (Inventor); Frerking, Margaret A. (Inventor); Maserjian, Joseph (Inventor)

1994-01-01

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

Planar Monolithic Schottky Varactor Diode Millimeter-Wave Frequency Multipliers

DTIC Science & Technology

1992-06-01

wave applications", IEEE Trans on Microwave Theory and Tech., vol. 39, no. 12, Dec. 1991 , pp. 1964-1971. A copy of this paper is 35 included in...Watts to Bulky 1991 spectral HV DC Power line Pwr Very Inguscio varies Massive 1986 with Vac.:um line Very low Gas noise Supply Ledatron Up to 1 W at...PULSED Band up to 1985 HV DC 10 GHz Massive Pwr Magnetic V?4MA > 100 GHz > 1 Watt Wide Cooling Research Quasi- McGruer Theory Theory Band Planar 1991

Linear phase compressive filter

DOEpatents

McEwan, Thomas E.

1995-01-01

A phase linear filter for soliton suppression is in the form of a laddered series of stages of non-commensurate low pass filters with each low pass filter having a series coupled inductance (L) and a reverse biased, voltage dependent varactor diode, to ground which acts as a variable capacitance (C). L and C values are set to levels which correspond to a linear or conventional phase linear filter. Inductance is mapped directly from that of an equivalent nonlinear transmission line and capacitance is mapped from the linear case using a large signal equivalent of a nonlinear transmission line.

CORRIGENDUM: Dielectric dispersion of BaxSr1 - xTiO3 thin film with parallel-plate and coplanar interdigital electrodes Dielectric dispersion of BaxSr1 - xTiO3 thin film with parallel-plate and coplanar interdigital electrodes

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Song, Qing; Xu, Feng; Sheng, Su; Wang, Peng; Ong, C. K.

2010-03-01

Figures 1, 2 and 5 of this paper are reprinted from the authors' previous paper, Zhang X-Y, Wang P, Sheng S, Xu F and Ong C K 2008 Ferroelectric BaxSr1 - xTiO3 thin-film varactors with parallel plate and interdigital electrodes for microwave applications J. Appl. Phys. 104 124110, copyright 2008, with permission from the American Institute of Physics.

Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

NASA Technical Reports Server (NTRS)

Crowe, Thomas W.

1997-01-01

Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

InAs-based Heterostructure Barrier Varactor Diodes with the In0.3Al0.7As0.4Sb0.6 as the Barrier Material

DTIC Science & Technology

2008-08-01

discussed. 2. Device growth and fabrication HBV diode samples were grown by solid-source molecular beam epitaxy (MBE). The layer structure consisted of...defined simultaneously using optical lithography, and Ti:Pt:Au (100:50:2500 Å) unannealed, Ohmic contacts were depos- ited by e- beam evaporation. The diode...behavior of a doped-channel high-electron mobility transistor ( HEMT ). Device physics simula- tions of the 200 Å HBV (using ATLAS from Silvaco

Slow-Wave Phase Shifters, Based on Thin Ferroelectric Films, for Reflectarray Antennas. Frequency-Agile Radio: Systems and Technlogies, WMG 139

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

2006-01-01

We have developed relatively broadband K- and Ka-band phase shifters using synthetic (slow-wave) transmission lines employing coupled microstripline "varactors". The tunable coupled microstripline circuits are based on laser ablated BaSrTiO films on lanthanum aluminate substrates. A model and design criteria for these novel circuits will be presented, along with measured performance including anomalous phase delay characteristics. The critical role of phase shifter loss and transient response in reflectarray antennas will be emphasized.

Tunable microstrip SQUID amplifiers for the Gen 2 Axion Dark Matter eXperiment (ADMX)

NASA Astrophysics Data System (ADS)

O'Kelley, Sean; Hilton, Gene; Clarke, John; ADMX Collaboration

2016-03-01

We present a series of tunable microstrip SQUID (Superconducting Quantum Interference Device) amplifiers (MSAs) for installation in ADMX. The axion dark matter candidate is detected via Primakoff conversion to a microwave photon in a high-Q (~100,000) tunable microwave cavity cooled with a dilution refrigerator in a 7-tesla magnetic field. The microwave photon frequency ν is a function of the unknown axion mass, so both the cavity and amplifier must be scanned over a wide frequency range. An MSA is a linear, phase-preserving amplifier consisting of a square washer loop, fabricated from a thin Nb film, incorporating two Josephson tunnel junctions with resistive shunts to prevent hysteresis. The input is coupled via a microstrip made from a square Nb coil deposited over the washer with an intervening insulating layer. Tunability is achieved by terminating the microstrip with GaAs varactors that operate below 100 mK. By varying the varactor capacitance with a bias voltage, the resonant frequency is varied by up to a factor of 2. We demonstrate several devices operating below 100 mK, matched to the discrete operating bands of ADMX at frequencies ranging from 560 MHz to 1 GHz. The MSAs exhibit gains exceeding 20 dB and the associated noise temperatures, measured with a hot/cold load, approach the standard quantum limit (hν/kB) . Supported by DOE Grants DE - FG02 - 97ER41029, DE - FG02 - 96ER40956, DE - AC52 - 07NA27344, DE - AC03 - 76SF00098, and the Livermore LDRD program.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-01-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Electronically controlled spoof localized surface plasmons on the corrugated ring with a shorting pin

NASA Astrophysics Data System (ADS)

Zhang, Chao; Zhou, Yong Jin

2018-07-01

We have demonstrated that spoof localized surface plasmons (LSPs) can be controlled by loading a shorting pin into the corrugated ring resonator in the microwave and terahertz (THz) frequencies. Electronical switchability and tunability of spoof LSPs have been achieved by mounting Schottky barrier diodes and varactor diodes across the slit around the shorting pin in the ground plane. An electronically tunable band-pass filter has been demostrated in the microwave frequencies. Such electronically controlled spoof LSPs devices can find more applications for highly integrated plasmonic circuits in microwave and THz frequencies.

Modeling of planar varactor frequency multiplier devices with blocking barriers

NASA Astrophysics Data System (ADS)

Lieneweg, Udo; Tolmunen, T. J.; Frerking, Margaret A.; Maserjian, Joseph

1992-05-01

Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.

Linear phase compressive filter

DOEpatents

McEwan, T.E.

1995-06-06

A phase linear filter for soliton suppression is in the form of a laddered series of stages of non-commensurate low pass filters with each low pass filter having a series coupled inductance (L) and a reverse biased, voltage dependent varactor diode, to ground which acts as a variable capacitance (C). L and C values are set to levels which correspond to a linear or conventional phase linear filter. Inductance is mapped directly from that of an equivalent nonlinear transmission line and capacitance is mapped from the linear case using a large signal equivalent of a nonlinear transmission line. 2 figs.

A contribution to the design of wideband tunable second harmonic mode millimeter-wave InP-TED oscillators above 110 GHz

NASA Astrophysics Data System (ADS)

Rydberg, Anders

1990-03-01

Second harmonic InP-TED oscillators are investigated for frequencies above 110 GHz using different mounts and TED's. It is found that state of the art output powers, comparable to Schottky-varactor multipliers, of more than 2 mW can be generated above 190 GHz by reducing the capsule parasitics. Output power up to 216 GHz are observed. The tuning range above 110 GHz is found to be more than 40 percent. Using theoretical waveguide models the tuning behavior of the oscillators is also investigated.

Superlattice barrier varactors

NASA Technical Reports Server (NTRS)

Raman, C.; Sun, J. P.; Chen, W. L.; Munns, G.; East, J.; Haddad, G.

1992-01-01

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Fully Passive Wireless Acquisition of Neuropotentials

NASA Astrophysics Data System (ADS)

Schwerdt, Helen N.

The ability to monitor electrophysiological signals from the sentient brain is requisite to decipher its enormously complex workings and initiate remedial solutions for the vast amount of neurologically-based disorders. Despite immense advancements in creating a variety of instruments to record signals from the brain, the translation of such neurorecording instrumentation to real clinical domains places heavy demands on their safety and reliability, both of which are not entirely portrayed by presently existing implantable recording solutions. In an attempt to lower these barriers, alternative wireless radar backscattering techniques are proposed to render the technical burdens of the implant chip to entirely passive neurorecording processes that transpire in the absence of formal integrated power sources or powering schemes along with any active circuitry. These radar-like wireless backscattering mechanisms are used to conceive of fully passive neurorecording operations of an implantable microsystem. The fully passive device potentially manifests inherent advantages over current wireless implantable and wired recording systems: negligible heat dissipation to reduce risks of brain tissue damage and minimal circuitry for long term reliability as a chronic implant. Fully passive neurorecording operations are realized via intrinsic nonlinear mixing properties of the varactor diode. These mixing and recording operations are directly activated by wirelessly interrogating the fully passive device with a microwave carrier signal. This fundamental carrier signal, acquired by the implant antenna, mixes through the varactor diode along with the internal targeted neuropotential brain signals to produce higher frequency harmonics containing the targeted neuropotential signals. These harmonics are backscattered wirelessly to the external interrogator that retrieves and recovers the original neuropotential brain signal. The passive approach removes the need for internal power sources and may alleviate heat trauma and reliability issues that limit practical implementation of existing implantable neurorecorders.

A dual-polarized and reconfigurable reflectarray for generation of vortex radio waves

NASA Astrophysics Data System (ADS)

Li, Chen-Chen; Wu, Lin-Sheng; Yin, Wen-Yan

2018-05-01

Electromagnetic (EM) waves with orbital angular momentum (OAM) provide a new degree of freedom for channel multiplexing to improve the capacity of wireless communication. For OAM-based systems, it is important to design specific configurations to generate vortex radios. In this paper, a reconfigurable reflectarray antenna is proposed with independent control of dual polarizations. A reflective cell is proposed by properly assigning the variable capacitances of four varactors, which are placed between metal square rings of each unit. The varactors of each unit are divided into two groups and the capacitance value of each group controls the reflection phase for a single linear polarization. By using the equivalent circuit model, the reflective units and array can be designed efficiently. Smooth phase variation and good reflection efficiency are achieved. Then, the reflectarray is set into sectors and a simple phase-shifting surface model is used to generate vortex beam. Each sector is realized with reflective units satisfying desired reflection phases for different modes. This kind of OAM-generating method can reduce the required variation range of reflection phase and provide more choices for a specific OAM mode combination with dual polarization, which is helpful to reduce mutual coupling between the two linear polarizations. Finally, full-wave simulations show that the 0, ±1, ±2 modes of vortex beam are successfully generated at 3.5 GHz with arbitrary combination in dual-polarization, which is also supported by OAM modes purity and reflection efficiency analysis. Therefore, in our design, the reconfigurable OAM and spin angular momentum (SAM), related with polarization, can be utilized simultaneously and independently for high-capacity wireless communication.

The effect of pumping noise on the characteristics of a single-stage parametric amplifier

NASA Astrophysics Data System (ADS)

Medvedev, S. Iu.; Muzychuk, O. V.

1983-10-01

An analysis is made of the operation of a single-stage parametric amplifier based on a varactor with a sharp transition. Analytical expressions are obtained for the statistical moments of the output signal, the signal-noise ratio, and other characteristics in the case when the output signal and the pump are a mixture of harmonic oscillation and Gaussian noise. It is shown that, when a noise component is present in the pump, an increase of its harmonic component to values close to the threshold leads to a sharp decrease in the signal-noise ratio at the amplifier output.

High quality factor graphene varactors for wireless sensing applications

NASA Astrophysics Data System (ADS)

Koester, Steven J.

2011-10-01

A graphene wireless sensor concept is described. By utilizing thin gate dielectrics, the capacitance in a metal-insulator-graphene structure varies with charge concentration through the quantum capacitance effect. Simulations using realistic structural and transport parameters predict quality factors, Q, >60 at 1 GHz. When placed in series with an ideal inductor, a resonant frequency tuning ratio of 25% (54%) is predicted for sense charge densities ranging from 0.32 to 1.6 μC/cm2 at an equivalent oxide thickness of 2.0 nm (0.5 nm). The resonant frequency has a temperature sensitivity, df/dT, less than 0.025%/K for sense charge densities >0.32 μC/cm2.

An electronically tuned wideband probehead for NQR spectroscopy in the VHF range

NASA Astrophysics Data System (ADS)

Scharfetter, Hermann

2016-10-01

Nuclear quadrupole resonance spectroscopy is an analytical method which allows to characterize materials which contain quadrupolar nuclei, i.e. nuclei with spin ⩾1. The measurement technology is similar to that of NMR except that no static magnetic field is necessary. In contrast to NMR, however, it is frequently necessary to scan spectra with a very large bandwidth with a span of several tens of % of the central frequency so as to localize unknown peaks. Standard NMR probeheads which are typically constructed as resonators must be tuned and matched to comparatively narrow bands and must thus be re-tuned and re-matched very frequently when scanning over a whole NQR spectrum. At low frequencies up to few MHz dedicated circuits without the need for tuning and matching have been developed, but many quadrupole nuclei have transitions in the VHF range between several tens of MHz up to several hundreds of MHz. Currently available commercial NQR probeheads employ stepper motors for setting mechanically tuneable capacitors in standard NMR resonators. These yield high quality factors (Q) and thus high SNR but are relatively large and clumsy and do not allow for fast frequency sweeps. This article presents a new concept for a NQR probehead which combines a previously published no-tune no-match wideband concept for the transmit (TX) pulse with an electronically tuneable receive (RX) part employing varactor diodes. The prototype coil provides a TX frequency range of 57 MHz with a center frequency of 97.5 MHz with a return loss of ⩽-15 dB. During RX the resonator is tuned and matched automatically to the right frequency via control voltages which are read out from a previously generated lookup table, thus providing high SNR. The control voltages which bias the varactors settle very fast and allow for hopping to the next frequency point in the spectrum within less than 100 μs. Experiments with a test sample of ZnBr2 proved the feasibility of the method.

Electric-field sensors for bullet detection systems

NASA Astrophysics Data System (ADS)

Vinci, Stephen; Hull, David; Ghionea, Simon; Ludwig, William; Deligeorges, Socrates; Gudmundsson, Thorkell; Noras, Maciej

2014-06-01

Research and experimental trials have shown that electric-field (E-field) sensors are effective at detecting charged projectiles. E-field sensors can likely complement traditional acoustic sensors, and help provide a more robust and effective solution for bullet detection and tracking. By far, the acoustic sensor is the most prevalent technology in use today for hostile fire defeat systems due to compact size and low cost, yet they come with a number of challenges that include multipath, reverberant environments, false positives and low signal-to-noise. Studies have shown that these systems can benefit from additional sensor modalities such as E-field sensors. However, E-field sensors are a newer technology that is relatively untested beyond basic experimental trials; this technology has not been deployed in any fielded systems. The U.S. Army Research Laboratory (ARL) has conducted live-fire experiments at Aberdeen Proving Grounds (APG) to collect data from E-field sensors. Three types of E-field sensors were included in these experiments: (a) an electric potential gradiometer manufactured by Quasar Federal Systems (QFS), (b) electric charge induction, or "D-dot" sensors designed and built by the Army Research Lab (ARL), and (c) a varactor based E-field sensor prototype designed by University of North Carolina-Charlotte (UNCC). Sensors were placed in strategic locations near the bullet trajectories, and their data were recorded. We analyzed the performance of each E-field sensor type in regard to small-arms bullet detection capability. The most recent experiment in October 2013 allowed demonstration of improved versions of the varactor and D-dot sensor types. Results of new real-time analysis hardware employing detection algorithms were also tested. The algorithms were used to process the raw data streams to determine when bullet detections occurred. Performance among the sensor types and algorithm effectiveness were compared to estimates from acoustics signatures and known ground truth. Results, techniques and configurations that might work best for a given sensor platform are discussed.

Performance of thin-film ferroelectric capacitors for EMC decoupling.

PubMed

Li, Huadong; Subramanyam, Guru

2008-12-01

This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.

Enhanced directional second harmonic radiation via nonlinear interference in 1D metamaterials

NASA Astrophysics Data System (ADS)

Guo, B. S.; Loo, Y. L.; Zhao, Q.; Ong, C. K.

2018-06-01

By using a one-dimensional nonlinear metamaterial in the experiment, we achieve a directional second harmonic radiation via nonlinear interference at approximately 2.5 GHz. Each meta-atom has the structure of coupled split-ring resonators and two varactors arranged parallel (symmetric) or antiparallel (antisymmetric) to each other. With an incident power of approximately  ‑2.7 dBm, the power of the emitted directional wave from the sample is at the scale of nanowatt. This relatively high magnitude of directional nonlinear power is the result of the 1D metamaterial abilities in exhibiting nonlinear magnetoelectric coupling, as well as supporting an electric dipole or magnetic dipole resonance within a narrow second harmonic frequency range.

Tunable Microstrip Filters Using Selectively Etched Ferroelectric Thin-Film Varactors for Coupling

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; VanKeuls, Frederick W.; Romanofsky, Robert R.; Subramanyam, Guru; Miranda, Felix A.

2006-01-01

We report on the use of patterned ferroelectric films to fabricate proof of concept tunable one-pole microstrip filters with excellent transmission and mismatch/reflection properties at frequencies up to 24 GHz. By controlling the electric field distribution within the coupling region between the resonator and input/output lines, sufficiently high loaded and unloaded Q values are maintained so as to be useful for microstrip filter design, with low mismatch loss. In the 23 - 24 GHz region, the filter was tunable over a 100 MHz range, the loaded and unloaded Q values were 29 and 68, respectively, and the reflection losses were below -16 dB, which demonstrates the suitability of these films for practical microwave applications.

Miniature X-band GaAs MMIC analog and bi-phase modulators for spaceborne communications applications

NASA Technical Reports Server (NTRS)

Mysoor, Narayan R.; Ali, Fazal

1992-01-01

The design concepts, analyses, and the development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of spaceborne communications systems are summarized. The design approach uses a very compact lumped-element, quadrature hybrid, and MESFET-varactors to provide low-loss and well-controlled phase performance for deep-space transponder (DST) applications. The measured results of the MESFET-diode show a capacitance range of 2:1 under reverse bias, and a Q of 38 at 10 GHz. Three cascaded sections of hybrid-coupled reflection phase shifters have been modeled and simulations performed to provide an X-band (8415 +/- 50 MHz) DST phase modulator with +/-2.5 radians of peak phase deviation.

Electric Field Sensor for Lightning Early Warning System

NASA Astrophysics Data System (ADS)

Premlet, B.; Mohammed, R.; Sabu, S.; Joby, N. E.

2017-12-01

Electric field mills are used popularly for atmospheric electric field measurements. Atmospheric Electric Field variation is the primary signature for Lightning Early Warning systems. There is a characteristic change in the atmospheric electric field before lightning during a thundercloud formation.A voltage controlled variable capacitance is being proposed as a method for non-contacting measurement of electric fields. A varactor based mini electric field measurement system is developed, to detect any change in the atmospheric electric field and to issue lightning early warning system. Since this is a low-cost device, this can be used for developing countries which are facing adversities. A network of these devices can help in forming a spatial map of electric field variations over a region, and this can be used for more improved atmospheric electricity studies in developing countries.

Mobile patient monitoring based on impedance-loaded SAW-sensors.

PubMed

Karilainen, Anna; Finnberg, Thomas; Uelzen, Thorsten; Dembowski, Klaus; Müller, Jörg

2004-11-01

A remotely requestable, passive, short-range sensor network for measuring small voltages is presented. The sensor system is able to simultaneously monitor six small voltages in millivolt-range, and it can be used for Holter-electrocardiogram (ECG) and other biopotential monitoring, or in industrial applications. The sensors are based on a surface acoustic wave (SAW) delay line with voltage-dependent, impedance loading on a reflector interdigital transducer (IDT). The load circuit impedance is varied by the capacitance of the voltage-controlled varactor. High resolution is achieved by developing a MOS-capacitor with a thin oxide, low flat-band voltage, and zero-voltage capacitance in the space-charge region, as well as a high-Q-microcoil by thick metal electroplating. Simultaneous monitoring of multiple potentials is realized by time-division-multiplexing of different sensor signals.

Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3 /SrMoO3 heterostructures

NASA Astrophysics Data System (ADS)

Radetinac, Aldin; Ziegler, Jürgen; Vafaee, Mehran; Alff, Lambert; Komissinskiy, Philipp

2017-04-01

Epitaxial heterostructures of ferroelectric Ba0.6Sr0.4TiO3 and highly conducting SrMoO3 were grown by pulsed laser deposition on SrTiO3 (0 0 1) substrates. Surface oxidation of the SrMoO3 film is suppressed using a thin cap interlayer of Ba0.6Sr0.4TiO3-δ grown in reduced atmosphere. As shown by X-ray photoelectron spectroscopy, the Mo4+ valence state of the SrMoO3 films is stable upon annealing of the sample in oxygen up to 600 °C. The described oxygen interface engineering enables utilization of the highly conducting material SrMoO3 in multilayer oxide ferroelectric varactors.

Tunable Transmission-Line Metamaterials Mimicking Electromagnetically Induced Transparency

NASA Astrophysics Data System (ADS)

Feng, T. H.; Han, H. P.

2016-11-01

Tunable transmission-line (TL) metamaterials mimicking electromagnetically induced transparency (EIT) have been studied. Firstly, two types of tunable TL EIT-like metamaterial, based on the double split-ring resonator (DSRR) and single split-ring resonator (SSRR), were fabricated and their transmission properties carefully compared. The results showed that the transmittance maximum was almost invariable with shift of the transparency window for the tunable DSRR-based TL EIT-like metamaterial, but for the tunable SSRR-based TL EIT-like metamaterial, the transmittance maximum gradually diminished with shift of the transparency window toward the center of the absorption band. Moreover, the reason for these different transmission properties was explored, revealing that the reduction of the transmittance maximum of the transparency window for the tunable SSRR-based TL EIT-like metamaterial is mainly due to energy loss caused by the resistance of the loaded varactor diodes.

Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Chen, Hong-Wei; Lee, Hsin-Ying

2003-06-01

Using a photoelectrochemical method involving a He-Cd laser, Ga2O3 oxide layers were directly grown on n-type GaN. We demonstrated the performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer. An extremely low reverse leakage current of 200 pA was achieved when devices operated at -20 V. Furthermore, high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively, were obtained. Using a photoassisted current-voltage method, a low interface state density of 2.53×1011 cm-2 eV-1 was estimated. The varactor devices permit formation of inversion layers, so that they may be applied for the fabrication of metal-oxide-semiconductor field-effect transistors.

Pulse plating of Pt on n-GaAs ( 1 0 0 ) wafer surfaces: Synchrotron induced photoelectron spectroscopy and XPS of wet fabrication processes

NASA Astrophysics Data System (ADS)

Ensling, D.; Hunger, R.; Kraft, D.; Mayer, Th.; Jaegermann, W.; Rodriguez-Girones, M.; Ichizli, V.; Hartnagel, H. L.

2003-01-01

Preparation steps of Pt/n-GaAs Schottky contacts as applied in the fabrication process of varactor diode arrays for THz applications are analysed by photoelectron spectroscopy. Pulsed cathodic deposition of Pt onto GaAs (1 0 0) wafer surfaces from acidic solution has been studied by core level photoelectron spectroscopy using different excitation energies. A laboratory AlKα source as well as synchrotron radiation of hν=130 and 645 eV at BESSY was used. Chemical analyses and semiquantitative estimates of layer thickness are given for the natural oxide of an untreated wafer surface, a surface conditioning NH 3 etching step, and stepwise pulse plating of Pt. The structural arrangement of the detected species and interface potentials are considered.

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

NASA Technical Reports Server (NTRS)

Maiwald, Frank; Schlecht, Erich; Ward, John; Lin, Robert; Leon, Rosa; Pearson, John; Mehdi, Imran

2003-01-01

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

Design and analysis of low-loss linear analog phase modulator for deep space spacecraft X-band transponder (DST) application

NASA Technical Reports Server (NTRS)

Mysoor, Narayan R.; Mueller, Robert O.

1991-01-01

This paper summarizes the design concepts, analyses, and the development of an X-band transponder low-loss linear phase modulator for deep space spacecraft applications. A single section breadboard circulator-coupled reflection phase modulator has been analyzed, fabricated, and evaluated. Two- and three-cascaded sections have been modeled and simulations performed to provide an X-band DST phase modulator with +/- 2.5 radians of peak phase deviation to accommodate down-link signal modulation with composite telemetry data and ranging with a deviation linearity tolerance +/- 8 percent and insertion loss of less than 10 +/- 0.5 dB. A two-section phase modulator using constant gamma hyperabrupt varactors and an efficient modulator driver circuit was breadboarded. The measured results satisfy the DST phase modulator requirements, and excellent agreement with the predicted results.

Monte Carlo Simulation of THz Multipliers

NASA Technical Reports Server (NTRS)

East, J.; Blakey, P.

1997-01-01

Schottky Barrier diode frequency multipliers are critical components in submillimeter and Thz space based earth observation systems. As the operating frequency of these multipliers has increased, the agreement between design predictions and experimental results has become poorer. The multiplier design is usually based on a nonlinear model using a form of harmonic balance and a model for the Schottky barrier diode. Conventional voltage dependent lumped element models do a poor job of predicting THz frequency performance. This paper will describe a large signal Monte Carlo simulation of Schottky barrier multipliers. The simulation is a time dependent particle field Monte Carlo simulation with ohmic and Schottky barrier boundary conditions included that has been combined with a fixed point solution for the nonlinear circuit interaction. The results in the paper will point out some important time constants in varactor operation and will describe the effects of current saturation and nonlinear resistances on multiplier operation.

Storage and retrieval of electromagnetic waves with orbital angular momentum via plasmon-induced transparency.

PubMed

Bai, Zhengyang; Xu, Datang; Huang, Guoxiang

2017-01-23

We propose a scheme to realize the storage and retrieval of high-dimensional electromagnetic waves with orbital angular momentum (OAM) via plasmon-induced transparency (PIT) in a metamaterial, which consists of an array of meta-atoms constructed by a metallic structure loaded with two varactors. We show that due to PIT effect the system allows the existence of shape-preserving dark-mode plasmonic polaritons, which are mixture of electromagnetic-wave modes and dark oscillatory modes of the meta-atoms and may carry various OAMs. We demonstrate that the slowdown, storage and retrieval of multi-mode electromagnetic waves with OAMs can be achieved through the active manipulation of a control field. Our work raises the possibility for realizing PIT-based spatial multi-mode memory of electromagnetic waves and is promising for practical application of information processing with large capacity by using room-temperature metamaterials.

Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

NASA Astrophysics Data System (ADS)

Haridasan, Vrinda

Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband rejection, and constant bandwidth is designed, simulated, fabricated and measured. The filters are fabricated using barium strontium titanate (BST) varactors. Electromagnetic simulations and measured results of the tunable two-pole ferroelectric filter are analyzed to explore the origins of high insertion loss in ferroelectric filters. The results indicate that the high-permittivity of the BST (a ferroelectric) not only makes the filters tunable and compact, but also increases the conductive loss of the ferroelectric-based tunable resonators which translates into high insertion loss in ferroelectric filters.

Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Romanofsky, Robert R.; VanKeuls, Frederick W.; Mueller, Carl H.; Treece, Randolph E.; Rivkin, Tania V.

1997-01-01

High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.

Simulation of 100-300 GHz solid-state harmonic sources

NASA Technical Reports Server (NTRS)

Zybura, Michael F.; Jones, J. Robert; Jones, Stephen H.; Tait, Gregory B.

1995-01-01

Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic Transferred Electron Oscillators (TEO's) and Heterostructure Barrier Varactor (HBV) frequency triplers have been obtained. This is accomplished by using a novel and efficient harmonic-balance circuit analysis technique which facilitates the integration of physics-based hydrodynamic device simulators. The integrated hydrodynamic device/harmonic-balance circuit simulators allow TEO and HBV circuits to be co-designed from both a device and a circuit point of view. Comparisons have been made with published experimental data for both TEO's and HBV's. For TEO's, excellent correlation has been obtained at 140 GHz and 188 GHz in second-harmonic operation. Excellent correlation has also been obtained for HBV frequency triplers operating near 200 GHz. For HBV's, both a lumped quasi-static equivalent circuit model and the hydrodynamic device simulator have been linked to the harmonic-balance circuit simulator. This comparison illustrates the importance of representing active devices with physics-based numerical device models rather than analytical device models.

Digital frequency control of satellite frequency standards. [Defense Navigation Satellites

NASA Technical Reports Server (NTRS)

Nichols, S. A.

1973-01-01

In the Frequency and Time Standard Development Program of the TIMATION System, a new miniaturized rubidium vapor frequency standard has been tested and analyzed for possible use on the TIMATION 3A launch, as part of the Defense Navigation Satellite Development Program. The design and construction of a digital frequency control was required to remotely control this rubidium vapor frequency standard as well as the quartz oscillator in current use. This control must be capable of accepting commands from a satellite telemetry system, verify that the correct commands have been sent and control the frequency to the requirements of the system. Several modifications must be performed to the rubidium vapor frequency standard to allow it to be compatible with the digital frequency control. These include the addition of a varactor to voltage tune the coarse range of the flywheel oscillator, and a modification to supply the C field current externally. The digital frequency control for the rubidium vapor frequency standard has been successfully tested in prototype form.

A compact D-band monolithic APDP-based sub-harmonic mixer

NASA Astrophysics Data System (ADS)

Zhang, Shengzhou; Sun, Lingling; Wang, Xiang; Wen, Jincai; Liu, Jun

2017-11-01

The paper presents a compact D-band monolithic sub-harmonic mixer (SHM) with 3 μm planar hyperabrupt schottky-varactor diodes offered by 70 nm GaAs mHEMT technology. According to empirical equivalent-circuit models, a wide-band large signal equivalent circuit model of the diode is proposed. Based on the extracted model, the mixer is implemented and optimized with a shunt-mounted anti-parallel diode pair (APDP) to fulfill the sub-harmonic mixing mechanism. Furthermore, a modified asymmetric three-transmission-line coupler is devised to achieve high-level coupling and minimize the chip size. The measured results show that the conversion gain varies between -13.9 dB and -17.5 dB from 110 GHz to 145 GHz, with a local oscillator (LO) power level of 14 dBm and an intermediate frequency (IF) of 1 GHz. The total chip size including probe GSG pads is 0.57 × 0.68mm2. In conclusion, the mixer exhibits outstanding figure-of-merits.

Electronically controlled rejections of spoof surface plasmons polaritons

NASA Astrophysics Data System (ADS)

Zhou, Yong Jin; Xiao, Qian Xun

2017-03-01

We have proposed and experimentally demonstrated a band-notched surface plasmonic filter, which is composed of an ultra-wide passband plasmonic filter with a simple C-shaped ring on the back of the substrate. Enhanced narrowband or broadband rejections of spoof surface plasmon polaritons (SPPs) can be achieved with double C-shaped rings in the propagation or transverse direction. By mounting active components across the slit cut in the C-shaped ring, dynamic control of rejection of spoof SPPs can be accomplished. Both the rejection of spoof SPPs and the rejection bandwidth can be controlled when the Schottky barrier diode is forward-biased or reverse-biased. The frequency spectrum of the rejection band can be electronically adjusted by tuning the applied bias voltage across the varactor diode. Both simulated and measured results agree well and demonstrate dynamic control of propagation of spoof SPPs at the microwave frequencies. Such electronically controllable devices could find more applications in advanced plasmonic integrated functional circuits in microwave and terahertz frequencies.

Microwave Hybrid Integrated Circuit Applicatins of High Transition Temperature Superconductor

NASA Astrophysics Data System (ADS)

Lu, Shih-Lin

This research work involves microwave characterization of high Tc superconducting (HTS) thin film using microstrip ring resonators, studying the nonlinear properties of HTS thin film transmission lines using two-tone intermodulation technique, coupling mechanisms and coupling factors of microstrip ring resonators side coupled to a microstrip line, two-port S-parameters measurements of GaAs MESFET at low temperature, and the design and implementation of hybrid ring resonator stabilized microwave oscillator using both metal films and superconducting films. A microstrip ring resonators operating at 10 GHz have been fabricated from YBCO HTS thin films deposited on one side of LaAl_2O_3 substrates. Below 60^circ Kelvin the measured unloaded Q of the HTS thin film microstrip ring resonators are more than 1.5 times that of gold film resonators. The two distinct but very close resonance peaks of a ring resonator side coupled to a microstrip line are experimentally identified as due to odd-mode and even-mode coupling. These two mechanisms have different characteristic equivalent circuit models and lead to different coupling coefficients and loaded resonance frequencies. The coupling factors for the two coupling modes are calculated using piecewise coupled line approximations. The two-port S-parameters measurement techniques and GaAs MESFET low temperature DC and microwave characteristics have been investigated. A system errors model including the errors caused by the line constriction at low temperature has been proposed and a temperature errors correction procedure has been developed for the two-port microwave S-parameters measurements at low temperature. The measured GaAs MESFET DC characteristics shows a 20% increase in transconductance at 77^circ K. There is also a 2 db increase in /S21/ at 77^circ K. The microwave oscillator stabilized with both metal and HTS thin film ring resonators have been studied. The tuning ability of the oscillator by a varactor diode has also been investigated. The phase noise performance of one side of the high Tc film oscillator does not show appreciable improvement over the gold film oscillator. With a varactor diode, the oscillator tuning range can be 300 MHz more. Two-tone intermodulation distortion (IMD) at 6.3 GHz in an HTS YBCO superconducting thin film microstrip transmission line on LaAl_2O _3 substrates are experimentally studied. At fixed input power, the 3rd order IMD power as function of temperature shows a minimum at a temperature around 60^circ Kelvin. With DC current applied, the second order IMD is observed and shows a strong functional dependance to the applied DC current and input power.

Tunable microwave metasurfaces for high-performance operations: dispersion compensation and dynamical switch

PubMed Central

Xu, He-Xiu; Tang, Shiwei; Ma, Shaojie; Luo, Weijie; Cai, Tong; Sun, Shulin; He, Qiong; Zhou, Lei

2016-01-01

Controlling the phase distributions on metasurfaces leads to fascinating effects such as anomalous light refraction/reflection, flat-lens focusing, and optics-vortex generation. However, metasurfaces realized so far largely reply on passive resonant meta-atoms, whose intrinsic dispersions limit such passive meta-devices’ performances at frequencies other than the target one. Here, based on tunable meta-atoms with varactor diodes involved, we establish a scheme to resolve these issues for microwave metasurfaces, in which the dispersive response of each meta-atom is precisely controlled by an external voltage imparted on the diode. We experimentally demonstrate two effects utilizing our scheme. First, we show that a tunable gradient metasurface exhibits single-mode high-efficiency operation within a wide frequency band, while its passive counterpart only works at a single frequency but exhibits deteriorated performances at other frequencies. Second, we demonstrate that the functionality of our metasurface can be dynamically switched from a specular reflector to a surface-wave convertor. Our approach paves the road to achieve dispersion-corrected and switchable manipulations of electromagnetic waves. PMID:27901088

Discrete breathers in an electric lattice with an impurity: Birth, interaction, and death

NASA Astrophysics Data System (ADS)

Gómez-Rojas, A.; Halevi, P.

2018-02-01

We have simulated aspects of intrinsic localized modes or discrete breathers in a modulated lumped transmission line with nonlinear varactors and a defect unit cell. As the inductance or capacitance of this cell is increased, a transition from instability to stability takes place. Namely, there exist threshold values of the inductance or capacitance of a lattice impurity for a breather to be able to attach to. A resistive defect can also anchor a breather. Moreover, by either gradually lowering all the source resistances, or else increasing the modulation frequency, multiple secondary ILMs can be spontaneously generated at host sites (with only a single inductive or capacitive defect). Further, if two impurities are subcritically spaced (the separation increasing with the amplitude of the modulation voltage), a breather can pop up midway, with no breathers at the impurity sites themselves. Finally, an ILM can pull closer its neighbors on both sides, only to perish once these ILMs have gotten sufficiently close. To our knowledge, these effects have not been reported for any discrete nonlinear system.

Discrete breathers in an electric lattice with an impurity: Birth, interaction, and death.

PubMed

Gómez-Rojas, A; Halevi, P

2018-02-01

We have simulated aspects of intrinsic localized modes or discrete breathers in a modulated lumped transmission line with nonlinear varactors and a defect unit cell. As the inductance or capacitance of this cell is increased, a transition from instability to stability takes place. Namely, there exist threshold values of the inductance or capacitance of a lattice impurity for a breather to be able to attach to. A resistive defect can also anchor a breather. Moreover, by either gradually lowering all the source resistances, or else increasing the modulation frequency, multiple secondary ILMs can be spontaneously generated at host sites (with only a single inductive or capacitive defect). Further, if two impurities are subcritically spaced (the separation increasing with the amplitude of the modulation voltage), a breather can pop up midway, with no breathers at the impurity sites themselves. Finally, an ILM can pull closer its neighbors on both sides, only to perish once these ILMs have gotten sufficiently close. To our knowledge, these effects have not been reported for any discrete nonlinear system.

Tunable microwave metasurfaces for high-performance operations: dispersion compensation and dynamical switch.

PubMed

Xu, He-Xiu; Tang, Shiwei; Ma, Shaojie; Luo, Weijie; Cai, Tong; Sun, Shulin; He, Qiong; Zhou, Lei

2016-11-30

Controlling the phase distributions on metasurfaces leads to fascinating effects such as anomalous light refraction/reflection, flat-lens focusing, and optics-vortex generation. However, metasurfaces realized so far largely reply on passive resonant meta-atoms, whose intrinsic dispersions limit such passive meta-devices' performances at frequencies other than the target one. Here, based on tunable meta-atoms with varactor diodes involved, we establish a scheme to resolve these issues for microwave metasurfaces, in which the dispersive response of each meta-atom is precisely controlled by an external voltage imparted on the diode. We experimentally demonstrate two effects utilizing our scheme. First, we show that a tunable gradient metasurface exhibits single-mode high-efficiency operation within a wide frequency band, while its passive counterpart only works at a single frequency but exhibits deteriorated performances at other frequencies. Second, we demonstrate that the functionality of our metasurface can be dynamically switched from a specular reflector to a surface-wave convertor. Our approach paves the road to achieve dispersion-corrected and switchable manipulations of electromagnetic waves.

Tunable microwave metasurfaces for high-performance operations: dispersion compensation and dynamical switch

NASA Astrophysics Data System (ADS)

Xu, He-Xiu; Tang, Shiwei; Ma, Shaojie; Luo, Weijie; Cai, Tong; Sun, Shulin; He, Qiong; Zhou, Lei

2016-11-01

Controlling the phase distributions on metasurfaces leads to fascinating effects such as anomalous light refraction/reflection, flat-lens focusing, and optics-vortex generation. However, metasurfaces realized so far largely reply on passive resonant meta-atoms, whose intrinsic dispersions limit such passive meta-devices’ performances at frequencies other than the target one. Here, based on tunable meta-atoms with varactor diodes involved, we establish a scheme to resolve these issues for microwave metasurfaces, in which the dispersive response of each meta-atom is precisely controlled by an external voltage imparted on the diode. We experimentally demonstrate two effects utilizing our scheme. First, we show that a tunable gradient metasurface exhibits single-mode high-efficiency operation within a wide frequency band, while its passive counterpart only works at a single frequency but exhibits deteriorated performances at other frequencies. Second, we demonstrate that the functionality of our metasurface can be dynamically switched from a specular reflector to a surface-wave convertor. Our approach paves the road to achieve dispersion-corrected and switchable manipulations of electromagnetic waves.

THz instrumentation for the Herschel Space Observatory's heterodyne instrument for far infrared

NASA Astrophysics Data System (ADS)

Pearson, John C.; Mehdi, Imran; Ward, John S.; Maiwald, Frank W.; Ferber, Robert R.; LeDuc, Henry G.; Schlecht, Erich T.; Gill, John J.; Hatch, William A.; Kawamura, Jonathan H.; Stern, Jeffrey A.; Gaier, Todd C.; Samoska, Lorene A.; Weinreb, Sander; Bumble, Bruce; Pukala, David M.; Javadi, Hamid H.; Finamore, Bradley P.; Lin, Robert H.; Dengler, Robert J.; Velebir, James R.; Luong, Edward M.; Tsang, Raymond; Peralta, Alejandro; Wells, Mary; Chun, William; Zmuidzinas, Jonas; Karpov, Alexandre; Phillips, Thomas; Miller, David; Maestrini, Alain E.; Erickson, Neal; Swift, Gerald; Liao, K. T.; Paquette, Michael

2004-10-01

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480- 1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-band Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

Integrated Millimeter-Wave Frequency Multiplers

NASA Astrophysics Data System (ADS)

Schoenthal, Gerhard S.; Deaver, B. S.; Crowe, T. W.; Bishop, W. L.; Saini, K.; Bradley, R. F.

2001-11-01

Many of the molecules of interest to radio astronomers and atmospheric chemists resonate at frequencies in the millimeter and submillimeter wavelength bands. To measure the spectra of these molecules scientists rely on heterodyne receivers that convert the high frequency signal to the GHz band where it is readily amplified and analyzed. One of the challenges of developing suitable receiver systems is the development of compact, reliable and affordable sources of local oscillator power at frequencies in excess of 100 GHz. One useful solution is to use GaAs Schottky diodes, in their varactor mode, to generate high frequency harmonics of lower frequency sources such as Gunn oscillators. As a part of a multi-national radio astronomy project, the Atacama Millimeter Large Array (ALMA), we have designed and fabricated a broadband frequency tripler with an output centered at 240 GHz. It is integrated on a quartz substrate to greatly reduce the parasitic capacitance and thereby improve electrical performance. The integrated circuit was designed to require no oxides or ohmic contacts, thereby easing fabrication. This talk will discuss the novel millimeter-wave integrated circuit fabrication process and the initial results.

SiGe BiCMOS manufacturing platform for mmWave applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

2010-10-01

TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

NASA Technical Reports Server (NTRS)

Pearson, J. C.; Mehdi, I.; Ward, J. S.; Maiwald, F.; Ferber, R. R.; Leduc, H. G.; Schlecht, E. T.; Gill, J. J.; Hatch, W. A.; Kawamura, J. H.;

MMIC linear-phase and digital modulators for deep space spacecraft X-band transponder applications

NASA Technical Reports Server (NTRS)

Mysoor, Narayan R.; Ali, Fazal

1991-01-01

The design concepts, analyses, and development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of space-borne communications systems are summarized. The design approach uses a compact lumped element quadrature hybrid and Metal Semiconductor Field Effect Transistors (MESFET)-varactors to provide low loss and well-controlled phase performance for deep space transponder (DST) applications. The measured results of the MESFET-diode show a capacitance range of 2:1 under reverse bias, and a Q of 38 at 10 GHz. Three cascaded sections of hybrid-coupled reflection phase shifters were modeled and simulations performed to provide an X-band (8415 +/- 50 MHz) DST phase modulator with +/- 2.5 radians of peak phase deviation. The modulator will accommodate downlink signal modulation with composite telemetry and ranging data, with a deviation linearity tolerance of +/- 8 percent and insertion loss of less than 8 +/- 0.5 dB. The MMIC digital modulator is designed to provide greater than 10 Mb/s of bi-phase modulation at X-band.

A frequency-sensing readout using piezoelectric sensors for sensing of physiological signals.

PubMed

Buxi, Dilpreet; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2014-01-01

Together with a charge or voltage amplifier, piezoelectric sensors are commonly used to pick up physiological vibrations from the body. As an alternative to chopper or auto-zero amplifiers, frequency sensing is known in literature to provide advantages of noise immunity, interfacing to digital readout systems as well as tunable range of sensing. A frequency-sensing readout circuit for sensing low voltage signals from piezoelectric sensors is successfully developed and tested in this work. The output voltage of a piezoelectric sensor is fed to a varactor, which is part of an Colpitts LC oscillator. The oscillation frequency is converted into a voltage using a phase locked loop. The circuit is compared to a reference design in terms of linearity, noise and transfer function. The readout has a input-referred noise voltage of 2.24μV/√Hz and consumes 15 mA at 5V supply. Arterial pulse wave signals and the cardiac vibrations from the chest are measured from one subject to show the proof of concept of the proposed readout. The results of this work are intended to contribute towards alternative low noise analog front end designs for piezoelectric sensors.

The Upper Atmosphere Research Satellite microwave limb sounder instrument

NASA Technical Reports Server (NTRS)

Barath, F. T.; Chavez, M. C.; Cofield, R. E.; Flower, D. A.; Frerking, M. A.; Gram, M. B.; Harris, W. M.; Holden, J. R.; Jarnot, R. F.; Kloezeman, W. G.

1993-01-01

The microwave limb sounder (MLS) on the Upper Atmosphere Research Satellite (UARS) is the first satellite experiment using limb sounding techniques at microwave frequencies. Primary measurement objectives are stratospheric ClO, O3, H2O, temperature, and pressure. Measurements are of thermal emission: all are performed simultaneously and continuously and are not degraded by ice clouds or volcanic aerosols. The instrument has a 1.6-m mechanically scanning antenna system and contains heterodyne radiometers in spectral bands centred near 63, 183, and 205 GHz. The radiometers operate at ambient temperature and use Schottky-diode mixers with local oscillators derived from phase-locked Gunn oscillators. Frequency tripling by varactor multipliers generates the 183- and 205-GHz local oscillators, and quasi-optical techniques inject these into the mixers. Six 15-channel filter banks spectrally resolve stratospheric thermal emission lines and produce an output spectrum every 2 s. Thermal stability is sufficient for 'total power' measurements which do not require fast chopping. Radiometric calibration, consisting of measurements of cold space and an internal target, is performed every 65-s limb scan. Instrument in-orbit performance has been excellent, and all objectives are being met.

Design and analysis of a low-loss linear analog phase modulator for deep space spacecraft X-band transponder applications

NASA Technical Reports Server (NTRS)

Mysoor, N. R.; Mueller, R. O.

1991-01-01

This article summarizes the design concepts, analyses, and development of an X-band (8145 MHz) transponder low-loss linear phase modulator for deep space spacecraft applications. A single-section breadboard circulator-coupled reflection phase modulator has been analyzed, fabricated, and evaluated. A linear phase deviation of 92 deg with a linearity tolerance of +/- 8 percent was measured for this modulator from 8257 MHz to 8634 MHz over the temperature range -20 to 75 C. The measured insertion loss and the static delay variation with temperature were 2 +/- 0.3 dB and 0.16 psec/ C, respectively. Based on this design, cascaded sections have been modeled, and simulations were performed to provide an X-band deep space transponder (DST) phase modulator with +/- 2.5 radians (+/- 143 deg) of peak phase deviation to accommodate downlink signal modulation with composite telemetry data and ranging, with a deviation linearity tolerance of +/- 8 percent and insertion loss of less than 10 +/- 0.5 dB. A two-section phase modulator using constant gamma hyperabrupt varactors and an efficient modulator driver circuit was breadboarded. The measured results satisfy the DST phase-modulator requirements and show excellent agreement with the predicted results.

Advanced electromagnetic methods for aerospace vehicles

NASA Technical Reports Server (NTRS)

Balanis, Constantine A.; El-Sharawy, El-Budawy; Hashemi-Yeganeh, Shahrokh; Aberle, James T.; Birtcher, Craig R.

1991-01-01

The Advanced Helicopter Electromagnetics is centered on issues that advance technology related to helicopter electromagnetics. Progress was made on three major topics: composite materials; precipitation static corona discharge; and antenna technology. In composite materials, the research has focused on the measurements of their electrical properties, and the modeling of material discontinuities and their effect on the radiation pattern of antennas mounted on or near material surfaces. The electrical properties were used to model antenna performance when mounted on composite materials. Since helicopter platforms include several antenna systems at VHF and UHF bands, measuring techniques are being explored that can be used to measure the properties at these bands. The effort on corona discharge and precipitation static was directed toward the development of a new two dimensional Voltage Finite Difference Time Domain computer program. Results indicate the feasibility of using potentials for simulating electromagnetic problems in the cases where potentials become primary sources. In antenna technology the focus was on Polarization Diverse Conformal Microstrip Antennas, Cavity Backed Slot Antennas, and Varactor Tuned Circular Patch Antennas. Numerical codes were developed for the analysis of two probe fed rectangular and circular microstrip patch antennas fed by resistive and reactive power divider networks.

Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene.

PubMed

Ebrish, Mona A; Olson, Eric J; Koester, Steven J

2014-07-09

The concentration-dependent density of states in graphene allows the capacitance in metal-oxide-graphene structures to be tunable with the carrier concentration. This feature allows graphene to act as a variable capacitor (varactor) that can be utilized for wireless sensing applications. Surface functionalization can be used to make graphene sensitive to a particular species. In this manuscript, the effect on the quantum capacitance of noncovalent basal plane functionalization using 1-pyrenebutanoic acid succimidyl ester and glucose oxidase is reported. It is found that functionalized samples tested in air have (1) a Dirac point similar to vacuum conditions, (2) increased maximum capacitance compared to vacuum but similar to air, (3) and quantum capacitance "tuning" that is greater than that in vacuum and ambient atmosphere. These trends are attributed to reduced surface doping and random potential fluctuations as a result of the surface functionalization due to the displacement of H2O on the graphene surface and intercalation of a stable H2O layer beneath graphene that increases the overall device capacitance. The results are important for future application of graphene as a platform for wireless chemical and biological sensors.

270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

2011-11-01

TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications

NASA Astrophysics Data System (ADS)

Kingon, Angus I.; Srinivasan, Sudarsan

2005-03-01

Replacement of noble metal electrodes by base metals significantly lowers the cost of ferroelectric, piezoelectric and dielectric devices. Here, we demonstrate that it is possible to process lead zirconate (Pb(Zr0.52Ti0.48)O3, or PZT) thin films directly on base metal copper foils. We explore the impact of the oxygen partial pressure during processing, and demonstrate that high-quality films and interfaces can be achieved through control of the oxygen partial pressure within a narrow window predicted by thermodynamic stability considerations. This demonstration has broad implications, opening up the possibility of the use of low-cost, high-conductivity copper electrodes for a range of Pb-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors and sensors; multilayer PZT piezoelectric stacks; and multilayer dielectric and electrostrictive devices based on lead magnesium niobate-lead titanate. We also point out that the capacitors do not fatigue on repeated switching, unlike those with Pt noble metal electrodes. Instead, they appear to be fatigue-resistant, like capacitors with oxide electrodes. This may have implications for ferroelectric non-volatile memories.

Electrical characterization of Bi1.50-xYxZn0.92Nb1.5O6.92 varactors

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Muis, Khalil O. Abu; Rob, Osama H. Abu Al; Mergen, A.

2014-05-01

The electrical properties of yttrium doped bismuth zinc niobium oxide (BZN) pyrochlore ceramics are explored by means of temperature dependent electrical conductivity dielectric constant and capacitance spectra in the frequency range of 0-3 GHz. It is observed that the doped BZN exhibit a conductivity type conversion from intrinsic to extrinsic as the doping content increased from 0.04 to 0.06. The thermal energy bandgap of the intrinsic type is 3.45 eV. The pyrochlore is observed to exhibit a dielectric breakdown at 395 K. In addition, a negative capacitance (NC) spectrum with main resonance peak position of 23.2 MHz is detected. The NC effect is ascribed to the increased polarization and the availability of more free carriers in the device. When the NC signal amplitude is attenuated in the range of 0-20 dBm at 50 MHz and 150 MHz, wide tunability is monitored. Such characteristics of the Y-doped BZN are attractive for using them to cancel the positive parasitic capacitance of electronic circuits. The canceling of parasitic capacitance improves the high frequency performance of filter inductors and reduces the common mode noise of the resonance signal.

The Upper Atmosphere Research Satellite microwave limb sounder instrument

NASA Astrophysics Data System (ADS)

Barath, F. T.; Chavez, M. C.; Cofield, R. E.; Flower, D. A.; Frerking, M. A.; Gram, M. B.; Harris, W. M.; Holden, J. R.; Jarnot, R. F.; Kloezeman, W. G.

1993-06-01

The microwave limb sounder (MLS) on the Upper Atmosphere Research Satellite (UARS) is the first satellite experiment using limb sounding techniques at microwave frequencies. Primary measurement objectives are stratospheric ClO, O3, H2O, temperature, and pressure. Measurements are of thermal emission: all are performed simultaneously and continuously and are not degraded by ice clouds or volcanic aerosols. The instrument has a 1.6-m mechanically scanning antenna system and contains heterodyne radiometers in spectral bands centred near 63, 183, and 205 GHz. The radiometers operate at ambient temperature and use Schottky-diode mixers with local oscillators derived from phase-locked Gunn oscillators. Frequency tripling by varactor multipliers generates the 183- and 205-GHz local oscillators, and quasi-optical techniques inject these into the mixers. Six 15-channel filter banks spectrally resolve stratospheric thermal emission lines and produce an output spectrum every 2 s. Thermal stability is sufficient for 'total power' measurements which do not require fast chopping. Radiometric calibration, consisting of measurements of cold space and an internal target, is performed every 65-s limb scan. Instrument in-orbit performance has been excellent, and all objectives are being met.

Capacitive Sensing of Intercalated H2O Molecules Using Graphene.

PubMed

Olson, Eric J; Ma, Rui; Sun, Tao; Ebrish, Mona A; Haratipour, Nazila; Min, Kyoungmin; Aluru, Narayana R; Koester, Steven J

2015-11-25

Understanding the interactions of ambient molecules with graphene and adjacent dielectrics is of fundamental importance for a range of graphene-based devices, particularly sensors, where such interactions could influence the operation of the device. It is well-known that water can be trapped underneath graphene and its host substrate; however, the electrical effect of water beneath graphene and the dynamics of how the interfacial water changes with different ambient conditions has not been quantified. Here, using a metal-oxide-graphene variable-capacitor (varactor) structure, we show that graphene can be used to capacitively sense the intercalation of water between graphene and HfO2 and that this process is reversible on a fast time scale. Atomic force microscopy is used to confirm the intercalation and quantify the displacement of graphene as a function of humidity. Density functional theory simulations are used to quantify the displacement of graphene induced by intercalated water and also explain the observed Dirac point shifts as being due to the combined effect of water and oxygen on the carrier concentration in the graphene. Finally, molecular dynamics simulations indicate that a likely mechanism for the intercalation involves adsorption and lateral diffusion of water molecules beneath the graphene.

Uncertainty quantification in capacitive RF MEMS switches

NASA Astrophysics Data System (ADS)

Pax, Benjamin J.

Development of radio frequency micro electrical-mechanical systems (RF MEMS) has led to novel approaches to implement electrical circuitry. The introduction of capacitive MEMS switches, in particular, has shown promise in low-loss, low-power devices. However, the promise of MEMS switches has not yet been completely realized. RF-MEMS switches are known to fail after only a few months of operation, and nominally similar designs show wide variability in lifetime. Modeling switch operation using nominal or as-designed parameters cannot predict the statistical spread in the number of cycles to failure, and probabilistic methods are necessary. A Bayesian framework for calibration, validation and prediction offers an integrated approach to quantifying the uncertainty in predictions of MEMS switch performance. The objective of this thesis is to use the Bayesian framework to predict the creep-related deflection of the PRISM RF-MEMS switch over several thousand hours of operation. The PRISM switch used in this thesis is the focus of research at Purdue's PRISM center, and is a capacitive contacting RF-MEMS switch. It employs a fixed-fixed nickel membrane which is electrostatically actuated by applying voltage between the membrane and a pull-down electrode. Creep plays a central role in the reliability of this switch. The focus of this thesis is on the creep model, which is calibrated against experimental data measured for a frog-leg varactor fabricated and characterized at Purdue University. Creep plasticity is modeled using plate element theory with electrostatic forces being generated using either parallel plate approximations where appropriate, or solving for the full 3D potential field. For the latter, structure-electrostatics interaction is determined through immersed boundary method. A probabilistic framework using generalized polynomial chaos (gPC) is used to create surrogate models to mitigate the costly full physics simulations, and Bayesian calibration and forward propagation of uncertainty are performed using this surrogate model. The first step in the analysis is Bayesian calibration of the creep related parameters. A computational model of the frog-leg varactor is created, and the computed creep deflection of the device over 800 hours is used to generate a surrogate model using a polynomial chaos expansion in Hermite polynomials. Parameters related to the creep phenomenon are calibrated using Bayesian calibration with experimental deflection data from the frog-leg device. The calibrated input distributions are subsequently propagated through a surrogate gPC model for the PRISM MEMS switch to produce probability density functions of the maximum membrane deflection of the membrane over several thousand hours. The assumptions related to the Bayesian calibration and forward propagation are analyzed to determine the sensitivity to these assumptions of the calibrated input distributions and propagated output distributions of the PRISM device. The work is an early step in understanding the role of geometric variability, model uncertainty, numerical errors and experimental uncertainties in the long-term performance of RF-MEMS.

A 3.2-GHz fully integrated low-phase noise CMOS VCO with self-biasing current source for the IEEE 802.11a/hiperLAN WLAN standard

NASA Astrophysics Data System (ADS)

Quemada, C.; Adin, I.; Bistue, G.; Berenguer, R.; Mendizabal, J.

2005-06-01

A 3.3V, fully integrated 3.2-GHz voltage-controlled oscillator (VCO) is designed in a 0.18μm CMOS technology for the IEE 802.11a/HiperLAN WLAN standard for the UNII band from 5.15 to 5.35 GHz. The VCO is tunable between 2.85 GHz and 3.31 GHz. NMOS architecture with self-biasing current of the tank source is chosen. A startup circuit has been employed to avoid zero initial current. Current variation is lower than 1% for voltage supply variations of 10%. The use of a self-biasing current source in the tank provides a greater safety in the transconductance value and allows running along more extreme point operation The designed VCO displays a phase noise and output power of -98dBc/Hz (at 100 KHz offset frequency) and 0dBm respectively. This phase noise has been obtained with inductors of 2.2nH and quality factor of 12 at 3.2 GHz, and P-N junction varactors whose quality factor is estimated to exceed 40 at 3.2 GHz. These passive components have been fabricated, measured and modeled previously. The core of the VCO consumes 33mW DC power.

Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

NASA Astrophysics Data System (ADS)

Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

2000-01-01

Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

THz frequency receiver instrumentation for Herschel's heterodyne instrument for far infrared (HIFI)

NASA Astrophysics Data System (ADS)

Pearson, John C.; Mehdi, Imran; Schlecht, Erich; Maiwald, Frank; Maestrini, Alain; Gill, John J.; Martin, Suzanne C.; Pukala, Dave; Ward, J.; Kawamura, Jonathan; McGrath, William R.; Hatch, William; Harding, Dennis G.; LeDuc, Henry G.; Stern, Jeffry A.; Bumble, Bruce; Samoska, Lorene A.; Gaier, Todd C.; Ferber, Robert; Miller, David; Karpov, Alexandre; Zmuidzinas, Jonas; Phillips, Thomas G.; Erickson, Neal R.; Swift, Jerry; Chung, Yun; Lai, Richard; Wang, Huei

2003-03-01

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory is comprised of five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. Two fixed tuned local oscillator sub-bands are derived from a common synthesizer to provide the front-end frequency coverage for each channel. The local oscillator unti will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, and novel material systems in the SIS mixtures. The National Aeronautics and Space Administration's Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the highest frequency (1650-1910 GHz) HEB mixers, local oscillators for the three highest frequency receivers as well as W-band power amplifiers, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. The current state of the art for each of these devices is presented along with a programmatic view of the development effort.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

NASA Astrophysics Data System (ADS)

Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

2013-11-01

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

A 4 GHz phase locked loop design in 65 nm CMOS for the Jiangmen Underground Neutrino Observatory detector

NASA Astrophysics Data System (ADS)

Parkalian, N.; Robens, M.; Grewing, C.; Christ, V.; Kruth, A.; Liebau, D.; Muralidharan, P.; Nielinger, D.; Roth, C.; Yegin, U.; Zambanini, A.; van Waasen, S.

2018-02-01

This paper presents a 4 GHz phase locked loop (PLL), which is implemented in a 65 nm standard CMOS process to provide low noise and high frequency sampling clocks for readout electronics to be used in the Jiangmen Underground Neutrino Observatory (JUNO) experiment. Based on the application requirements the target of the design is to find the best compromise between power consumption, area and phase noise for a highly reliable topology. The design implements a novel method for the charge pump that suppresses current mismatch when the PLL is locked. This reduces static phase offset at the inputs of the phase-frequency detector (PFD) that otherwise would introduce spurs at the PLL output. In addition, a technique of amplitude regulation for the voltage controlled oscillator (VCO) is presented to provide low noise and reliable operation. The combination of thin and thick oxide varactor transistors ensures optimum tuning range and linearity over process as well as temperature changes for the VCO without additional calibration steps. The current mismatch at the output of the charge pump for the control voltage at about half the 1 V supply voltage is below 0.3% and static phase offset down to 0.25% is reached. The total PLL consumes 18.5 mW power at 1.8 V supply for the VCO and 1 V supply for the other parts.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu; Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil; Sun, Nian X.

2013-11-21

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstratedmore » in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.« less

Flexible CMOS low-noise amplifiers for beyond-3G wireless hand-held devices

NASA Astrophysics Data System (ADS)

Becerra-Alvarez, Edwin C.; Sandoval-Ibarra, Federico; de la Rosa, José M.

2009-05-01

This paper explores the use of reconfigurable Low-Noise Amplifiers (LNAs) for the implementation of CMOS Radio Frequency (RF) front-ends in the next generation of multi-standard wireless transceivers. Main circuit strategies reported so far for multi-standard LNAs are reviewed and a novel flexible LNA intended for Beyond-3G RF hand-held terminals is presented. The proposed LNA circuit consists of a two-stage topology that combines inductive-source degeneration with PMOS-varactor based tuning network and a programmable load to adapt its performance to different standard specifications without penalizing the circuit noise and with a reduced number of inductors as compared to previous reported reconfigurable LNAs. The circuit has been designed in a 90-nm CMOS technology to cope with the requirements of the GSM, WCDMA, Bluetooth and WLAN (IEEE 802.11b-g) standards. Simulation results, including technology and packaging parasitics, demonstrate correct operation of the circuit for all the standards under study, featuring NF<2.8dB, S21>13.3dB and IIP3>10.9dBm, over a 1.85GHz-2.4GHz band, with an adaptive power consumption between 17mW and 22mW from a 1-V supply voltage. Preliminary experimental measurements are included, showing a correct reconfiguration operation within the operation band.

Theory and design of nonlinear metamaterials

NASA Astrophysics Data System (ADS)

Rose, Alec Daniel

If electronics are ever to be completely replaced by optics, a significant possibility in the wake of the fiber revolution, it is likely that nonlinear materials will play a central and enabling role. Indeed, nonlinear optics is the study of the mechanisms through which light can change the nature and properties of matter and, as a corollary, how one beam or color of light can manipulate another or even itself within such a material. However, of the many barriers preventing such a lofty goal, the narrow and limited range of properties supported by nonlinear materials, and natural materials in general, stands at the forefront. Many industries have turned instead to artificial and composite materials, with homogenizable metamaterials representing a recent extension of such composites into the electromagnetic domain. In particular, the inclusion of nonlinear elements has caused metamaterials research to spill over into the field of nonlinear optics. Through careful design of their constituent elements, nonlinear metamaterials are capable of supporting an unprecedented range of interactions, promising nonlinear devices of novel design and scale. In this context, I cast the basic properties of nonlinear metamaterials in the conventional formalism of nonlinear optics. Using alternately transfer matrices and coupled mode theory, I develop two complementary methods for characterizing and designing metamaterials with arbitrary nonlinear properties. Subsequently, I apply these methods in numerical studies of several canonical metamaterials, demonstrating enhanced electric and magnetic nonlinearities, as well as predicting the existence of nonlinear magnetoelectric and off-diagonal nonlinear tensors. I then introduce simultaneous design of the linear and nonlinear properties in the context of phase matching, outlining five different metamaterial phase matching methods, with special emphasis on the phase matching of counter propagating waves in mirrorless parametric amplifiers and oscillators. By applying this set of tools and knowledge to microwave metamaterials, I experimentally confirm several novel nonlinear phenomena. Most notably, I construct a backward wave nonlinear medium from varactor-loaded split ring resonators loaded in a rectangular waveguide, capable of generating second-harmonic opposite to conventional nonlinear materials with a conversion efficiency as high as 1.5%. In addition, I confirm nonlinear magnetoelectric coupling in two dual gap varactor-loaded split ring resonator metamaterials through measurement of the amplitude and phase of the second-harmonic generated in the forward and backward directions from a thin slab. I then use the presence of simultaneous nonlinearities in such metamaterials to observe nonlinear interference, manifest as unidirectional difference frequency generation with contrasts of 6 and 12 dB in the forward and backward directions, respectively. Finally, I apply these principles and intuition to several plasmonic platforms with the goal of achieving similar enhancements and configurations at optical frequencies. Using the example of fluorescence enhancement in optical patch antennas, I develop a semi-classical numerical model for the calculation of field-induced enhancements to both excitation and spontaneous emission rates of an embedded fluorophore, showing qualitative agreement with experimental results, with enhancement factors of more than 30,000. Throughout these series of works, I emphasize the indispensability of effective design and retrieval tools in understanding and optimizing both metamaterials and plasmonic systems. Ultimately, when weighed against the disadvantages in fabrication and optical losses, the results presented here provide a context for the application of nonlinear metamaterials within three distinct areas where a competitive advantage over conventional materials might be obtained: fundamental science demonstrations, linear and nonlinear anisotropy engineering, and extremely compact resonant all-optical devices.

Sputtered (barium(x), strontium(1-x))titanate, BST, thin films on flexible copper foils for use as a non-linear dielectric

NASA Astrophysics Data System (ADS)

Laughlin, Brian James

Ferroelectric thin film dielectrics have a non-linear DC bias dependent permittivity and can be used as the dielectric between metal electrodes to make tunable Metal-Insulator-Metal (MIM) capacitors. Varactors can be used to change the resonance frequency of a circuit allowing high speed frequency switching intra- and inter-band. 2-D geometric arrays of circuitry, where resonant frequency is independently controlled by tunable elements in each section of the array, allow electromagnetic radiation to be focused and the wave front spatial trajectory controlled. BST thin films varactors allow large DC fields to be applied with modest voltages providing large tunabilities. If ferroelectric thin film based devices are to complement or supplant semiconductor varactors as tunable elements then devices must be synthesized using a low cost processing techniques. The Film on Foil process methodology for depositing BST thin films on copper foil substrates was used to create BST/Cu specimens. Sputtering conditions were determined via BST deposition on platinized silicon. Sputtered BST thin films were synthesized on Cu foil substrates and densified using high T, controlled pO2 anneals. XRD showed the absence of Cu2O in as-deposited, post crystallization annealed, and post "re-ox" annealed state. Data showed a polycrystalline BST microstructure with a 55--80 nm grain size and no copper oxidation. HRTEM imaging qualitatively showed evidence of an abrupt BST/Cu interface free from oxide formation. Dielectric properties of Cu/BST/Pt MIM devices were measured as a function of DC bias, frequency, and temperature. A permittivity of 725 was observed with tunability >3:1 while zero bias tan delta of 0.02 saturating to tan delta < 0.003 at high DC bias. No significant frequency dispersion was observed over five decades of frequency. Temperature dependent measurements revealed a broad ferroelectric transition with a maximum at -32°C which sustains a large tunability over -150°C to 150°C. Sputtered BST thin films on copper foils show comparable dielectric properties to CVD deposited films on platinized silicon substrates proving sputtered BST/Cu specimens can reproduce excellent properties using a more cost-effective processing approach. A concept for reducing the temperature dependence was explored. Stacks of multiple compositions of BST thin films were considered as an extension of core-shell structures to a thin film format. Temperature profiles of BST/Cu films were modeled and mathematically combined in simulations of multi-composition film stacks. Simulations showed singular composition BST thin films could meet X7R specifications if a film has a 292 K < TC < 330 K. Simulations of series connected film stacks show only modest temperature profile broadening. Parallel connected dual composition film stacks showed a 75°C temperature range with essentially flat capacitance by simulating compositions that create a DeltaTC = 283°C. Maximum permittivity and temperature profile shape independent of film thickness or composition were assumed for simulations. BST/Cu thickness and compositions series were fabricated and dielectric properties characterized. These studies showed films could be grown from 300 nm and approaching 1 mum without changing the dielectric temperature response. In studying BST composition, an increasing TC shift was observed when increasing Ba mole fraction in BST thin films while tunability >3:1 was maintained. These results provide a route for creating temperature stable capacitors using a BST/Cu embodiment. An effort to reduce surface roughness of copper foil substrates adversely impacted BST film integrity by impairing adhesion. XPS analysis of high surface roughness commercially obtained Cu foils revealed a surface treatment of Zn-Cu-O that was not present on smooth Cu, thus an investigation of surface chemistry was conducted. Sessile drop experiments were performed to characterize Cu-BST adhesion and the effects of metallic Zn and ZnO in this system. The study revealed the work of adhesion of Cu-BST, WCu-BSTa ≈ 0.60 J m-2, an intermediate value relative to noble metals commonly used as electrodes and substrates for electroceramics. Examination of metallic Zn-BST adhesion revealed a dramatic decrease of WZn-BSTa ≈ 0.13 J m-2, while increasing the content of Zn in metallic (Cux,Zn1-x) alloys monotonically reduced WCux,Zn1-x -BSTa . Conversely, a Cu-ZnO interface showed a large work of adhesion, WCu-ZnOa = 2.0 J m-2. These results indicate that a ZnO interlayer between the substrate Cu and the BST thin film provides adequate adhesion for robust films on flexible copper foil substrates. Additionally, this study provided characterization of adhesion for Zn-Al2O3 and Zn-BST; data that does not exist in the open literature. A process has been developed for preparing ultra-smooth copper foils by evaporation and subsequent peel-off of copper metal layers from glass slides. These 15 mum thick substrates exhibited roughness values between 1 and 2 nm RMS and 9 nm RMS over 25 mum2 and 100 mum2 analysis areas, respectively. The deposition and crystallization of BST layers on these ultra-smooth foils is demonstrated. The fully processed dielectric layers exhibited field tunability >5:1, and could withstand fields >750 kV cm-1. High field loss tangents below 0.007 were observed, making these materials excellent candidates for microwave devices. Finally, a process of lamination and contact lithography was used to demonstrate patterning of micron-scale features suitable for microwave circuit element designs.

A tunable microstrip SQUID amplifier for the Axion Dark Matter eXperiment (ADMX)

NASA Astrophysics Data System (ADS)

O'Kelley, Sean; Hansen, Jorn; Weingarten, Elan; Mueck, Michael; Hilton, Gene; Clarke, John

2014-03-01

We describe a microstrip SQUID (Superconducting QUantum Interference Device) amplifier (MSA) used as the photon detector in the Axion Dark Matter eXperiment (ADMX). Cooled to 100 mK or lower, an optimized MSA approaches the quantum limit of detection. The axion dark matter is detected via Primakoff conversion to a microwave photon in a high-Q (~ 105) tunable microwave cavity, currently cooled to about 1.6 K, in the presence of a 7-tesla magnetic field. The MSA consists of a square loop of thin Nb film, incorporating two Josephson tunnel junctions with resistive shunts to prevent hysteresis in the current-voltage characteristic. The microstrip is a square Nb coil deposited over an intervening insulating layer. Since the photon frequency is determined by the unknown axion mass, the cavity and amplifier must be tunable over a broad frequency range. Tunability is achieved by terminating the microstrip with a GaAs varactor diode with a voltage-controlled capacitance that enables us to vary the resonance from nearly 1/2 to 1/4 of a wavelength. With the SQUID current-biased in the voltage state, we demonstrate a gain of typically 20 dB over nearly one octave, 415 MHz to 800 MHz. Supported by DOE Grants DE-FG02-97ER41029, DE-FG02-96ER40956, DE-AC52-07NA27344, DE-AC03-76SF00098, NSF grants PHY-1067242 and PHY-1306729, and the Livermore LDRD program.

A Generalized Polynomial Chaos-Based Approach to Analyze the Impacts of Process Deviations on MEMS Beams.

PubMed

Gao, Lili; Zhou, Zai-Fa; Huang, Qing-An

2017-11-08

A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC), is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC) approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC)-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations.

A Generalized Polynomial Chaos-Based Approach to Analyze the Impacts of Process Deviations on MEMS Beams

PubMed Central

Gao, Lili

2017-01-01

A microstructure beam is one of the fundamental elements in MEMS devices like cantilever sensors, RF/optical switches, varactors, resonators, etc. It is still difficult to precisely predict the performance of MEMS beams with the current available simulators due to the inevitable process deviations. Feasible numerical methods are required and can be used to improve the yield and profits of the MEMS devices. In this work, process deviations are considered to be stochastic variables, and a newly-developed numerical method, i.e., generalized polynomial chaos (GPC), is applied for the simulation of the MEMS beam. The doubly-clamped polybeam has been utilized to verify the accuracy of GPC, compared with our Monte Carlo (MC) approaches. Performance predictions have been made on the residual stress by achieving its distributions in GaAs Monolithic Microwave Integrated Circuit (MMIC)-based MEMS beams. The results show that errors are within 1% for the results of GPC approximations compared with the MC simulations. Appropriate choices of the 4-order GPC expansions with orthogonal terms have also succeeded in reducing the MC simulation labor. The mean value of the residual stress, concluded from experimental tests, shares an error about 1.1% with that of the 4-order GPC method. It takes a probability around 54.3% for the 4-order GPC approximation to attain the mean test value of the residual stress. The corresponding yield occupies over 90 percent around the mean within the twofold standard deviations. PMID:29117096

A Triple-Loop Inductive Power Transmission System for Biomedical Applications.

PubMed

Lee, Byunghun; Kiani, Mehdi; Ghovanloo, Maysam

2016-02-01

A triple-loop wireless power transmission (WPT) system equipped with closed-loop global power control, adaptive transmitter (Tx) resonance compensation (TRC), and automatic receiver (Rx) resonance tuning (ART) is presented. This system not only opposes coupling and load variations but also compensates for changes in the environment surrounding the inductive link to enhance power transfer efficiency (PTE) in applications such as implantable medical devices (IMDs). The Tx was built around a commercial off-the-shelf (COTS) radio-frequency identification (RFID) reader, operating at 13.56 MHz. A local Tx loop finds the optimal capacitance in parallel with the Tx coil by adjusting a varactor. A global power control loop maintains the received power at a desired level in the presence of changes in coupling distance, coil misalignments, and loading. Moreover, a local Rx loop is implemented inside a power management integrated circuit (PMIC) to avoid PTE degradation due to the Rx coil surrounding environment and process variations. The PMIC was fabricated in a 0.35- μm 4M2P standard CMOS process with 2.54 mm(2) active area. Measurement results show that the proposed triple-loop system improves the overall PTE by up to 10.5% and 4.7% compared to a similar open- and single closed-loop system, respectively, at nominal coil distance of 2 cm. The added TRC and ART loops contribute 2.3% and 1.4% to the overall PTE of 13.5%, respectively. This is the first WPT system to include three loops to dynamically compensate for environment and circuit variations and improve the overall power efficiency all the way from the driver output in Tx to the load in Rx.

80-GHz MMIC HEMT Voltage-Controlled Oscillator

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Micovic, Miro; Hu, Ming; Janke, Paul; Ngo, Catherine; Nguyen, Loi

2003-01-01

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Low noise 874 GHz receivers for the International Submillimetre Airborne Radiometer (ISMAR)

NASA Astrophysics Data System (ADS)

Hammar, A.; Sobis, P.; Drakinskiy, V.; Emrich, A.; Wadefalk, N.; Schleeh, J.; Stake, J.

2018-05-01

We report on the development of two 874 GHz receiver channels with orthogonal polarizations for the International Submillimetre Airborne Radiometer. A spline horn antenna and dielectric lens, a Schottky diode mixer circuit, and an intermediate frequency (IF) low noise amplifier circuit were integrated in the same metallic split block housing. This resulted in a receiver mean double sideband (DSB) noise temperature of 3300 K (minimum 2770 K, maximum 3400 K), achieved at an operation temperature of 40 °C and across a 10 GHz wide IF band. A minimum DSB noise temperature of 2260 K at 20 °C was measured without the lens. Three different dielectric lens materials were tested and compared with respect to the radiation pattern and noise temperature. All three lenses were compliant in terms of radiation pattern, but one of the materials led to a reduction in noise temperature of approximately 200 K compared to the others. The loss in this lens was estimated to be 0.42 dB. The local oscillator chains have a power consumption of 24 W and consist of custom-designed Schottky diode quadruplers (5% power efficiency in operation, 8%-9% peak), commercial heterostructure barrier varactor (HBV) triplers, and power amplifiers that are pumped by using a common dielectric resonator oscillator at 36.43 GHz. Measurements of the radiation pattern showed a symmetric main beam lobe with full width half maximum <5° and side lobe levels below -20 dB. Return loss of a prototype of the spline horn and lens was measured using a network analyzer and frequency extenders to 750-1100 GHz. Time-domain analysis of the reflection coefficients shows that the reflections are below -25 dB and are dominated by the external waveguide interface.

Electrically Variable or Programmable Nonvolatile Capacitors

NASA Technical Reports Server (NTRS)

Shangqing, Liu; NaiJuan, Wu; Ignatieu, Alex; Jianren, Li

2009-01-01

Electrically variable or programmable capacitors based on the unique properties of thin perovskite films are undergoing development. These capacitors show promise of overcoming two important deficiencies of prior electrically programmable capacitors: Unlike in the case of varactors, it is not necessary to supply power continuously to make these capacitors retain their capacitance values. Hence, these capacitors may prove useful as components of nonvolatile analog and digital electronic memories. Unlike in the case of ferroelectric capacitors, it is possible to measure the capacitance values of these capacitors without changing the values. In other words, whereas readout of ferroelectric capacitors is destructive, readout of these capacitors can be nondestructive. A capacitor of this type is a simple two terminal device. It includes a thin film of a suitable perovskite as the dielectric layer, sandwiched between two metal or metal oxide electrodes (for example, see Figure 1). The utility of this device as a variable capacitor is based on a phenomenon, known as electrical-pulse-induced capacitance (EPIC), that is observed in thin perovskite films and especially in those thin perovskite films that exhibit the colossal magnetoresistive (CMR) effect. In EPIC, the application of one or more electrical pulses that exceed a threshold magnitude (typically somewhat less than 1 V) gives rise to a nonvolatile change in capacitance. The change in capacitance depends on the magnitude duration, polarity, and number of pulses. It is not necessary to apply a magnetic field or to cool the device below (or heat it above) room temperature to obtain EPIC. Examples of suitable CMR perovskites include Pr(1-x)Ca(x)MnO3, La(1-x)S-r(x)MnO3,and Nb(1-x)Ca(x)MnO3. Figure 2 is a block diagram showing an EPIC capacitor connected to a circuit that can vary the capacitance, measure the capacitance, and/or measure the resistance of the capacitor.

RF MEMS devices for multifunctional integrated circuits and antennas

NASA Astrophysics Data System (ADS)

Peroulis, Dimitrios

Micromachining and RF Micro-Electro-Mechanical Systems (RF MEMS) have been identified as two of the most significant enabling technologies in developing miniaturized low-cost communications systems and sensor networks. The key components in these MEMS-based architectures are the RF MEMS switches and varactors. The first part of this thesis focuses on three novel RF MEMS components with state-of-the-art performance. In particular, a broadband 6 V capacitive MEMS switch is presented with insertion loss of only 0.04 and 0.17 dB at 10 and 40 GHz respectively. Special consideration is given to particularly challenging issues, such as residual stress, planarity, power handling capability and switching speed. The need for switches operating below 1 GHz is also identified and a spring-loaded metal-to-metal contact switch is developed. The measured on-state contact resistance and off-state series capacitance are 0.5 O and 10 fF respectively for this switch. An analog millimeter-wave variable capacitor is the third MEMS component presented in this thesis. This variable capacitor shows an ultra high measured tuning range of nearly 4:1, which is the highest reported value for the millimeter-wave region. The second part of this thesis primarily concentrates on MEMS-based reconfigurable systems and their potential to revolutionize the design of future RF/microwave multifunctional systems. High-isolation switches and switch packets with isolation of more than 60 dB are designed and implemented. Furthermore, lowpass and bandpass tunable filters with 3:1 and 2:1 tuning ratios respectively are demonstrated. Similar methods have been also applied to the field of slot antennas and a novel design technique for compact reconfigurable antennas has been developed. The main advantage of these antennas is that they essentially preserve their impedance, radiation pattern, polarization, gain and efficiency for all operating frequencies. The thesis concludes by discussing the future challenges of RF MEMS, such as packaging and reliability.

Cryogenic phased-array for high resolution magnetic resonance imaging (MRI); assessment of clinical and research applications

NASA Astrophysics Data System (ADS)

Ip, Flora S.

Magnetic Resonance (MR) imaging is one of the most powerful tools in diagnostic medicine for soft tissue imaging. Image acquisition techniques and hardware receivers are very important in achieving high contrast and high resolution MR images. An aim of this dissertation is to design single and multi-element room and cryogenic temperature arrays and make assessments of their signal-to-noise ratio (SNR) and SNR gain. In this dissertation, four sets of MR receiver coils are built. They are the receiver-only cryo-coils that are not commercially available. A tuning and matching circuit is attached to each coil. The tuning and matching circuits are simple; however, each device component has to operate at a high magnetic field and cryogenic temperature environment. Remote DC bias of the varactor controls the tuning and matching outside the scanner room. Active detuning of the resonator is done by two p-i-n junction (PIN) diodes. Cooling of the receiver is done by a customized liquid nitrogen cryostat. The first application is to build a 3-Tesla 2x1 horseshoe counter-rotating current (CRC) cryogenic array to image the tibia in a human body. With significant increase in SNR, the surface coil should deliver high contrast and resolution images that can show the trabecular bone and bone marrow structure. This structural image will be used to model the mechanical strength of the bone as well as bone density and chance of fracture. The planar CRC is a unique design of this surface array. The second application is to modify the coil design to 7-Tesla to study the growth of infant rhesus monkey eyes. Fast scan MR images of the infant monkey heads are taken for monitoring shapes of their eyeballs. The monkeys are induced with shortsightedness by eye lenses, and they are scanned periodically to get images of their eyeballs. The field-of-view (FOV) of these images is about five centimeters and the area of interest is two centimeters deep from the surface. Because of these reasons, the MR counter-rotating current coil is sufficient and demonstrated its simplicity over a phased array in this application.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bingnan

Photonic crystals and metamaterials, both composed of artificial structures, are two interesting areas in electromagnetism and optics. New phenomena in photonic crystals and metamaterials are being discovered, including some not found in natural materials. This thesis presents my research work in the two areas. Photonic crystals are periodically arranged artificial structures, mostly made from dielectric materials, with period on the same order of the wavelength of the working electromagnetic wave. The wave propagation in photonic crystals is determined by the Bragg scattering of the periodic structure. Photonic band-gaps can be present for a properly designed photonic crystal. Electromagnetic waves withmore » frequency within the range of the band-gap are suppressed from propagating in the photonic crystal. With surface defects, a photonic crystal could support surface modes that are localized on the surface of the crystal, with mode frequencies within the band-gap. With line defects, a photonic crystal could allow the propagation of electromagnetic waves along the channels. The study of surface modes and waveguiding properties of a 2D photonic crystal will be presented in Chapter 1. Metamaterials are generally composed of artificial structures with sizes one order smaller than the wavelength and can be approximated as effective media. Effective macroscopic parameters such as electric permittivity ϵ, magnetic permeability μ are used to characterize the wave propagation in metamaterials. The fundamental structures of the metamaterials affect strongly their macroscopic properties. By designing the fundamental structures of the metamaterials, the effective parameters can be tuned and different electromagnetic properties can be achieved. One important aspect of metamaterial research is to get artificial magnetism. Metallic split-ring resonators (SRRs) and variants are widely used to build magnetic metamaterials with effective μ < 1 or even μ < 0. Varactor based nonlinear SRRs are built and modeled to study the nonlinearity in magnetic metamaterials and the results will be presented in Chapter 3. Negative refractive index n is one of the major target in the research of metamaterials. Negative n can be obtained with a metamaterial with both ϵ and μ negative. As an alternative, negative index for one of the circularly polarized waves could be achieved with metamaterials having a strong chirality ?. In this case neither ϵ} nor μ negative is required. My work on chiral metamaterials will be presented in Chapter 4.« less

Tunable dielectric response, resistive switching, and unconventional transport in SrTiO3

NASA Astrophysics Data System (ADS)

Mikheev, Evgeny

The first section of this thesis discusses integration of SR TiO3 grown by molecular beam epitaxy (MBE) in vertical device structures. One target application is as a tunable dielectric. Parallel plate capacitors based on epitaxial Pt(001) bottom electrodes and (Ba,Sr)TiO 3 dielectric layers grown by MBE are demonstrated. Optimization of structural quality of the vertical stack is shown to produce very low dielectric loss combined with very high tunability of the dielectric constant by DC bias. This results in considerable improvement of common figures of merit for varactor performance in comparison to previous reports. Another target application for transition metals oxides is in resistive switching memories, which are based on the hysteretic current-voltage response observed in many oxide-based Schottky junctions and capacitors. A study on the role of metal/oxide interface quality is presented. In particular, the use of epitaxial Pt(001) as Schottky contacts to Nb:SRTiO 3 is shown to suppress resistive switching hysteresis by eliminating unintentional contributions to interface capacitance. Such uncontrolled factors are discussed as a probable root cause for poor reproducibility in resistive switching memories, currently a ubiquitous challenge in the field. Potential routes towards stabilizing reproducible switching through intentional control of defect densities in high-quality structures are discussed, including a proof of concept demonstration using Schottky junctions incorporating intentionally non-stoichiometric SRTiO3 interlayers grown by MBE. The second section of this thesis is concerned with unconventional electronic transport in SRTiO3. A systematic description of scattering mechanisms will be presented for three related material systems: uniformly-doped SRTiO3, two-dimensional electron liquids (2DEL) at SRTiO3/RTiO 3 interfaces (R = Gd, Sm) and confined 2DELs in RTiO3/SRTiO3/ RTiO3 quantum wells. In particular, the prevalence of a well-defined T2 scattering rate in doped SRTiO3 will be discussed as being incompatible with its traditional assignment as electron-electron scattering in a Fermi liquid. In the case of ultrathin SRTiO3 quantum wells bound by RTiO3, evidence will be presented for the existence of a quantum critical point. This refers to a quantum phase transition at zero temperature towards an ordered phase in SRTiO 3. This transition is driven by increasing confinement of the 2DEL, with a critical point located at the 5 SrO layer thickness of SRTiO 3. It is manifested in anomalous temperature exponents of the power law resistivity. Additionally, a well-defined trend for the separation of the Hall and longitudinal scattering rates will be presented, analogously to a similar effect observed in the normal state of high-Tc superconductors. In particular, a unique pattern of residual scattering separation was documented, consistent with a quantum critical correction to the Hall lifetime that is divergent at the quantum critical point.

Novel Microstrip Patch Antennas with Frequency Agility, Polarization Reconfigurability, Dual Null Steering Capability and Phased Array Antenna with Beam Steering Performance

NASA Astrophysics Data System (ADS)

Babakhani, Behrouz

Nowadays the wireless communication technology is playing an important role in our daily life. People use wireless devices not only as a conventional communication device but also as tracking and navigation tool, web browsing tool, data storage and transfer tool and so for many other reasons. Based on the user demand, wireless communication engineers try to accommodate as many as possible wireless systems and applications in a single device and therefore, creates a multifunctional device. Antenna, as an integral part of any wireless communication systems, should also be evolved and adjusted with development of wireless transceiver systems. Therefore multifunctional antennas have been introduced to support and enhance the functionality on modern wireless systems. The main focus and contribution of this thesis is design of novel multifunctional microstrip antennas with frequency agility, polarization reconfigurablity, dual null steering capability and phased array antenna with beam steering performance. In this thesis, first, a wide bandwidth(1.10 GHz to 1.60 GHz) right-handed circularly polarized (RHCP) directional antenna for global positioning system (GPS) satellite receive application has been introduced which covers all the GPS bands starting from L1 to L5. This design consists of two crossed bow-tie dipole antennas fed with sequentially phase rotated feed network backed with an artificial high impedance surface (HIS) structure to generate high gain directional radiation patterns. This design shows good CP gain and axial ratio (AR) and wide beamwidth performance. Although this design has good radiation quality, the size and the weight can be reduced as future study. In the second design, a frequency agile antenna was developed which also covers the L-band (L1 to L5) satellite communication frequencies. This frequency agile antenna was designed and realized by new implementation of varactor diodes in the geometry of a circular patch antenna. Beside wide frequency agility (1.17 GHz to 1.58 GHz), full polarization reconfiguration was added to the design by controlling ports excitation of circular patch using RF switches (vertical linear, horizontal linear, right-handed circular polarization (RHCP) and left-handed circular polarization (LHCP)). This deign maintains good gain and radiation efficiency over the tunable range as well as acceptable co-polarization and cross-polarization separation for different polarizations. Since many communications applications require beam steering ability, in our third design, we designed and developed a linear phased array antenna using a modified version of our frequency agile polarization reconfigurable antenna for beam steering applications. This design offers wide frequency agility (1.50 GHz to 2.40 GHz), full polarization reconfiguration (vertical linear, horizontal linear, LHCP and RHCP) as well as beam steering of +/-52° and +/-28° at 1.5 GHz and 2.4 GHz, respectively. In this 1x4 array, the excitation magnitude and phase of each element was controlled by an analog beamforming feed network (BFN) for beam steering purposes. The required excitation for each element to steer the beam toward a desired location was calculated using projection matrix method (PMM) which uses measured active element pattern (AEP) as its input. This array antenna performance for frequency agility, radiation quality for each polarization and beam steering capability was obtained in the acceptable range. In the last design, the full spherical dual null steering capability of a triple mode circular microstrip patch antenna was investigated. By combining the radiation patterns of three individual modes of microstrip circular patch antenna, two nulls have been generated. These nulls can be repositioned in the upper hemisphere by controlling excitation ratio of each mode. The modes excitation ratio to steer the nulls toward the desired positions was calculated using a derivative free hybrid optimization method. This optimization method uses particle swarm optimization (PSO) combined with pattern search (PS) to find the optimum modes excitation ratio which minimizes the received power at the null positions. The calculated coefficients were applied to the multimode antenna using an analog BFN. This design shows an independent dual null steering with null depth of around 20 dB. Discussion about the proposed antennas included detailed theoretical analysis, numerical simulation and optimizations, beam forming and null steering algorithms, fabrication of the antennas and its control/beamforming feed networks along with the associated bias networks, microcontroller units, and finally its characterization (impedance matching, gain and 2D and 3D radiation patterns). The research work was performed at the Antenna and Microwave Lab (AML) which has the required resources including full wave analysis tools, PCB milling machine, surface mount component soldering station, vector network analyzers, and far-field/spherical near-field radiation pattern measurement system.