Design and performance of a pulse transformer based on Fe-based nanocrystalline core.

PubMed

Yi, Liu; Xibo, Feng; Lin, Fuchang

2011-08-01

A dry-type pulse transformer based on Fe-based nanocrystalline core with a load of 0.88 nF, output voltage of more than 65 kV, and winding ratio of 46 is designed and constructed. The dynamic characteristics of Fe-based nanocrystalline core under the impulse with the pulse width of several microseconds were studied. The pulse width and incremental flux density have an important effect on the pulse permeability, so the pulse permeability is measured under a certain pulse width and incremental flux density. The minimal volume of the toroidal pulse transformer core is determined by the coupling coefficient, the capacitors of the resonant charging circuit, incremental flux density, and pulse permeability. The factors of the charging time, ratio, and energy transmission efficiency in the resonant charging circuit based on magnetic core-type pulse transformer are analyzed. Experimental results of the pulse transformer are in good agreement with the theoretical calculation. When the primary capacitor is 3.17 μF and charge voltage is 1.8 kV, a voltage across the secondary capacitor of 0.88 nF with peak value of 68.5 kV, rise time (10%-90%) of 1.80 μs is obtained.

Frequency-resolved optical gating system with a tellurium crystal for characterizing free-electron lasers in the wavelength range of 10-30 {mu}m

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iijima, Hokuto; Nagai, Ryoji; Nishimori, Nobuyuki

2009-12-15

A second-harmonic generation frequency-resolved optical gating (SHG-FROG) system has been developed for the complete characterization of laser pulses in the wavelength range of 10-30 {mu}m. A tellurium crystal is used so that spectrally resolved autocorrelation signals with a good signal-to-noise ratio are obtained. Pulses (wavelength {approx}22 {mu}m) generated from a free-electron laser are measured by the SHG-FROG system. The SHG intensity profile and the spectrum obtained by FROG measurements are well consistent with those of independent measurements of the pulse length and spectrum. The pulse duration and spectral width determined from the FROG trace are 0.6 ps and 5.2 THzmore » at full width half maximum, respectively.« less

Propagation and spatiotemporal coupling characteristics of ultra-short Gaussian vortex pulse

NASA Astrophysics Data System (ADS)

Nie, Jianye; Liu, Guodong; Zhang, Rongzhu

2018-05-01

Based on Collins diffraction integral formula, the propagation equation of ultra-short Gaussian vortex pulse beam has been derived. Using the equation, the intensity distribution variations of vortex pulse in the propagation process are calculated. Specially, the spatiotemporal coupling characteristics of ultra-short vortex beams are discussed in detail. The results show that some key parameters, such as transverse distance, transmission distance, pulse width and topological charge number will influence the spatiotemporal coupling characteristics significantly. With the increasing of transverse distance, the waveforms of the pulses distort obviously. And when transmission distance is far than 50 mm, the distribution curve of transverse intensity gradually changes into a Gaussian type. In addition, initial pulse width will affect the distribution of light field, however, when initial pulse width is larger than 3 fs, the spatiotemporal coupling effect will be insignificant. Topological charge number does not affect the time delay characteristics, since with the increasing of topological charge number, the waveform of the pulse distorts gradually but the time delay does not occur.

Monitoring Digital Closed-Loop Feedback Systems

NASA Technical Reports Server (NTRS)

Katz, Richard; Kleyner, Igor

2011-01-01

A technique of monitoring digital closed-loop feedback systems has been conceived. The basic idea is to obtain information on the performances of closed-loop feedback circuits in such systems to aid in the determination of the functionality and integrity of the circuits and of performance margins. The need for this technique arises as follows: Some modern digital systems include feedback circuits that enable other circuits to perform with precision and are tolerant of changes in environment and the device s parameters. For example, in a precision timing circuit, it is desirable to make the circuit insensitive to variability as a result of the manufacture of circuit components and to the effects of temperature, voltage, radiation, and aging. However, such a design can also result in masking the indications of damaged and/or deteriorating components. The present technique incorporates test circuitry and associated engineering-telemetry circuitry into an embedded system to monitor the closed-loop feedback circuits, using spare gates that are often available in field programmable gate arrays (FPGAs). This technique enables a test engineer to determine the amount of performance margin in the system, detect out of family circuit performance, and determine one or more trend(s) in the performance of the system. In one system to which the technique has been applied, an ultra-stable oscillator is used as a reference for internal adjustment of 12 time-to-digital converters (TDCs). The feedback circuit produces a pulse-width-modulated signal that is fed as a control input into an amplifier, which controls the circuit s operating voltage. If the circuit s gates are determined to be operating too slowly or rapidly when their timing is compared with that of the reference signal, then the pulse width increases or decreases, respectively, thereby commanding the amplifier to increase or reduce, respectively, its output level, and "adjust" the speed of the circuits. The nominal frequency of the TDC s pulse width modulated outputs is approximately 40 kHz. In this system, the technique is implemented by means of a monitoring circuit that includes a 20-MHz sampling circuit and a 24-bit accumulator with a gate time of 10 ms. The monitoring circuit measures the duty cycle of each of the 12 TDCs at a repetition rate of 28 Hz. The accumulator content is reset to all zeroes at the beginning of each measurement period and is then incremented or decremented based of the value of the state of the pulse width modulated signal. Positive or negative values in the accumulator correspond to duty cycles greater or less, respectively, than 50 percent.

Switching power supply

DOEpatents

Mihalka, A.M.

1984-06-05

The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

Radar transponder operation with compensation for distortion due to amplitude modulation

DOEpatents

Ormesher, Richard C [Albuquerque, NM; Tise, Bertice L [Albuquerque, NM; Axline, Jr., Robert M.

2011-01-04

In radar transponder operation, a variably delayed gating signal is used to gate a received radar pulse and thereby produce a corresponding gated radar pulse for transmission back to the source of the received radar pulse. This compensates for signal distortion due to amplitude modulation on the retransmitted pulse.

Fast photomultiplier tube gating system for underwater laser detector

NASA Astrophysics Data System (ADS)

Lei, Xuanhua; Yang, Kecheng; Rao, Jionghui; Zhang, Xiaohui; Xia, Min; Zheng, Yi; Li, Wei

2007-01-01

Laser will attenuate during its propagation in water and also be backward scattered by water when it is used to detect bubbles in the ocean. Meanwhile backward scattering intensity of the bubbles is feeble, its dynamic range reaches to the order of 6, which saturates PMT and its post-treatment circuit. Timely gating system is used to solve the problem. The system contains pulsed laser and gating PMT receiver. The wavelength of the laser is 532nm, with pulse width of several nanometers. Its operational delay is matched with the time period between laser traveling forward and back after scattered by the target. By doing this, the light scattered by other object is eliminated, dynamic range of the signal reduces, and consequently SNR increases. In order to avoid Signal Induced Noise(SIN), we choose PMT R1333 having no HA coating. TTL logical level, which is used as gating signal, controls the first dynode voltage of PMT to implement gating. Gating speed is about 100ns, of which the width is tunable. By carefully designing the electronic system, SNR is eliminated to a level as low as possible, and the output signal of PMT is fast integrated in order to reduce the influences of signal induced by opening the gate.

A flexible FPGA based QDC and TDC for the HADES and the CBM calorimeters

NASA Astrophysics Data System (ADS)

Rost, A.; Galatyuk, T.; Koenig, W.; Michel, J.; Pietraszko, J.; Skott, P.; Traxler, M.

2017-02-01

A Charge-to-Digital-Converter (QDC) and Time-to-Digital-Converter (TDC) based on a commercial FPGA (Field Programmable Gate Array) was developed to read out PMT signals of the planned HADES electromagnetic calorimeter (ECAL) at GSI Helmholtzzentrum für Schwerionenforschung GmbH (Darmstadt, Germany). The main idea is to convert the charge measurement of a detector signal into a time measurement, where the charge is encoded in the width of a digital pulse, while the arrival time information is encoded in the leading edge time of the pulse. The PaDiWa-AMPS prototype front-end board for the TRB3 (General Purpose Trigger and Readout Board—version 3) which implements this conversion method was developed and qualified. The already well established TRB3 platform provides the needed precise time measurements and serves as a data acquisition system. We present the read-out concept and the performance of the prototype boards in laboratory and also under beam conditions. First steps have been completed in order to adapt this concept to SiPM signals of the hadron calorimeter in the CBM experiment at the planned FAIR facility (Darmstadt).

Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Carey, Patrick; Ren, Fan; Wang, Yu-Lin; Good, Michael L.; Jang, Soohwan; Mastro, Michael A.; Pearton, S. J.

2017-11-01

We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/ml. The glass slide approach is attractive for inexpensive cartridge-type sensors.

Compact pulse width modulation circuitry for silicon photomultiplier readout.

PubMed

Bieniosek, M F; Olcott, P D; Levin, C S

2013-08-07

The adoption of solid-state photodetectors for positron emission tomography (PET) system design and the interest in 3D interaction information from PET detectors has lead to an increasing number of readout channels in PET systems. To handle these additional readout channels, PET readout electronics should be simplified to reduce the power consumption, cost, and size of the electronics for a single channel. Pulse-width modulation (PWM), where detector pulses are converted to digital pulses with width proportional to the detected photon energy, promises to simplify PET readout by converting the signals to digital form at the beginning of the processing chain, and allowing a single time-to-digital converter to perform the data acquisition for many channels rather than routing many analogue channels and digitizing in the back end. Integrator based PWM systems, also known as charge-to-time converters (QTCs), are especially compact, reducing the front-end electronics to an op-amp integrator with a resistor discharge, and a comparator. QTCs, however, have a long dead-time during which dark count noise is integrated, reducing the output signal-to-noise ratio. This work presents a QTC based PWM circuit with a gated integrator that shows performance improvements over existing QTC based PWM. By opening and closing an analogue switch on the input of the integrator, the circuit can be controlled to integrate only the portions of the signal with a high signal-to-noise ratio. It also allows for multiplexing different detectors into the same PWM circuit while avoiding uncorrelated noise propagation between photodetector channels. Four gated integrator PWM circuits were built to readout the spatial channels of two position sensitive solid-state photomultiplier (PS-SSPM). Results show a 4 × 4 array 0.9 mm × 0.9 mm × 15 mm of LYSO crystals being identified on the 5 mm × 5 mm PS-SSPM at room temperature with no degradation for twofold multiplexing. In principle, much larger multiplexing ratios are possible, limited only by count rate issues.

The Feynman-Y Statistic in Relation to Shift-Register Neutron Coincidence Counting: Precision and Dead Time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Croft, Stephen; Santi, Peter A.; Henzlova, Daniela

The Feynman-Y statistic is a type of autocorrelation analysis. It is defined as the excess variance-to-mean ratio, Y = VMR - 1, of the number count distribution formed by sampling a pulse train using a series of non-overlapping gates. It is a measure of the degree of correlation present on the pulse train with Y = 0 for Poisson data. In the context of neutron coincidence counting we show that the same information can be obtained from the accidentals histogram acquired using the multiplicity shift-register method, which is currently the common autocorrelation technique applied in nuclear safeguards. In the casemore » of multiplicity shift register analysis however, overlapping gates, either triggered by the incoming pulse stream or by a periodic clock, are used. The overlap introduces additional covariance but does not alter the expectation values. In this paper we discuss, for a particular data set, the relative merit of the Feynman and shift-register methods in terms of both precision and dead time correction. Traditionally the Feynman approach is applied with a relatively long gate width compared to the dieaway time. The main reason for this is so that the gate utilization factor can be taken as unity rather than being treated as a system parameter to be determined at characterization/calibration. But because the random trigger interval gate utilization factor is slow to saturate this procedure requires a gate width many times the effective 1/e dieaway time. In the traditional approach this limits the number of gates that can be fitted into a given assay duration. We empirically show that much shorter gates, similar in width to those used in traditional shift register analysis can be used. Because the way in which the correlated information present on the pulse train is extracted is different for the moments based method of Feynman and the various shift register based approaches, the dead time losses are manifested differently for these two approaches. The resulting estimates for the dead time corrected first and second order reduced factorial moments should be independent of the method however and this allows the respective dead time formalism to be checked. We discuss how to make dead time corrections in both the shift register and the Feynman approaches.« less

Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

NASA Astrophysics Data System (ADS)

Chen, Meng; Lei, Jiefeng; Huang, Shengxiang; Liao, Congwei; Deng, Lianwen

2017-06-01

A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μs. The proposed gate driver can still function properly with positive {V}{TH} shift within 0.4 V and negative {V}{TH} shift within -1.2 V and it is robust and promising for high-resolution display. Project supported by the Science and Technology Project of Hunan Province, China (No. 2015JC3401)

Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

PubMed

Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

2012-06-06

Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Nine-channel mid-power bipolar pulse generator based on a field programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haylock, Ben, E-mail: benjamin.haylock2@griffithuni.edu.au; Lenzini, Francesco; Kasture, Sachin

Many channel arbitrary pulse sequence generation is required for the electro-optic reconfiguration of optical waveguide networks in Lithium Niobate. Here we describe a scalable solution to the requirement for mid-power bipolar parallel outputs, based on pulse patterns generated by an externally clocked field programmable gate array. Positive and negative pulses can be generated at repetition rates up to 80 MHz with pulse width adjustable in increments of 1.6 ns across nine independent outputs. Each channel can provide 1.5 W of RF power and can be synchronised with the operation of other components in an optical network such as light sourcesmore » and detectors through an external clock with adjustable delay.« less

Sub-50-as isolated extreme ultraviolet continua generated by 1.6-cycle near-infrared pulse combined with double optical gating scheme

NASA Astrophysics Data System (ADS)

Oguri, Katsuya; Mashiko, Hiroki; Ogawa, Tatsuya; Hanada, Yasutaka; Nakano, Hidetoshi; Gotoh, Hideki

2018-04-01

We demonstrate the generation of ultrabroad bandwidth attosecond continua extending to sub-50-as duration in the extreme ultraviolet (EUV) region based on a 1.6-cycle Ti:sapphire laser pulse. The combination of the amplitude gating scheme with a sub-two-cycle driver pulse and the double optical gating scheme achieves the continuum generation with a bandwidth of 70 eV at the full width at half maximum near the peak photon energy of 140 eV, which supports a Fourier-transform-limited pulse duration as short as 32 as. The carrier-envelope-phase (CEP) dependence of the attosecond continua shows a single-peak structure originating from the half-cycle cut-off at appropriate CEP values, which strongly indicates the generation of a single burst of an isolated attosecond pulse. Our approach suggests a possibility for isolated sub-50-as pulse generation in the EUV region by compensating for the intrinsic attosecond chirp with a Zr filter.

Modeling and Analysis of Gated, Pulsed RFI and Its Effect on GPS Receivers: Analysis of Average Cycle Slip Rate and Average Bit Error Probability

DTIC Science & Technology

2014-04-01

as a function of the pulse duty cycle PDC is [1]: ∆C/N0 = 20 log(1 − PDC ) (1) PDC , PW × PRF (2) where PW represents the pulse width (sec) and PRF is...corresponding degradation in C/N0 should now be modeled as ∆C/N0 = 20 log(1 − PDCLIM) (3) PDCLIM , PDC τobs TTC . (4) The degradation model of Eqn. 3 and 4...cycle that is the product of the duty cycle of the pulsed waveform ( PDC ) and the duty cycle of the of the gating waveform (τobs/TTC). While such a model

Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method

NASA Astrophysics Data System (ADS)

Pelamatti, Alice; Goiffon, Vincent; Chabane, Aziouz; Magnan, Pierre; Virmontois, Cédric; Saint-Pé, Olivier; de Boisanger, Michel Breart

2016-11-01

The charge transfer time represents the bottleneck in terms of temporal resolution in Pinned Photodiode (PPD) CMOS image sensors. This work focuses on the modeling and estimation of this key parameter. A simple numerical model of charge transfer in PPDs is presented. The model is based on a Montecarlo simulation and takes into account both charge diffusion in the PPD and the effect of potential obstacles along the charge transfer path. This work also presents a new experimental approach for the estimation of the charge transfer time, called pulsed Storage Gate (SG) method. This method, which allows reproduction of a ;worst-case; transfer condition, is based on dedicated SG pixel structures and is particularly suitable to compare transfer efficiency performances for different pixel geometries.

Voltage-Boosting Driver For Switching Regulator

NASA Technical Reports Server (NTRS)

Trump, Ronald C.

1990-01-01

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

PubMed

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-20

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

NASA Astrophysics Data System (ADS)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-01

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teruya, A T; Moody, J D; Hsing, W W

2012-10-01

We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation ofmore » the ROIC in two modes. If “common mode” triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at λ~ 400 nm at sub-ps pulse widths.« less

Photon gating in four-dimensional ultrafast electron microscopy.

PubMed

Hassan, Mohammed T; Liu, Haihua; Baskin, John Spencer; Zewail, Ahmed H

2015-10-20

Ultrafast electron microscopy (UEM) is a pivotal tool for imaging of nanoscale structural dynamics with subparticle resolution on the time scale of atomic motion. Photon-induced near-field electron microscopy (PINEM), a key UEM technique, involves the detection of electrons that have gained energy from a femtosecond optical pulse via photon-electron coupling on nanostructures. PINEM has been applied in various fields of study, from materials science to biological imaging, exploiting the unique spatial, energy, and temporal characteristics of the PINEM electrons gained by interaction with a "single" light pulse. The further potential of photon-gated PINEM electrons in probing ultrafast dynamics of matter and the optical gating of electrons by invoking a "second" optical pulse has previously been proposed and examined theoretically in our group. Here, we experimentally demonstrate this photon-gating technique, and, through diffraction, visualize the phase transition dynamics in vanadium dioxide nanoparticles. With optical gating of PINEM electrons, imaging temporal resolution was improved by a factor of 3 or better, being limited only by the optical pulse widths. This work enables the combination of the high spatial resolution of electron microscopy and the ultrafast temporal response of the optical pulses, which provides a promising approach to attain the resolution of few femtoseconds and attoseconds in UEM.

Photon gating in four-dimensional ultrafast electron microscopy

PubMed Central

Hassan, Mohammed T.; Liu, Haihua; Baskin, John Spencer; Zewail, Ahmed H.

2015-01-01

Ultrafast electron microscopy (UEM) is a pivotal tool for imaging of nanoscale structural dynamics with subparticle resolution on the time scale of atomic motion. Photon-induced near-field electron microscopy (PINEM), a key UEM technique, involves the detection of electrons that have gained energy from a femtosecond optical pulse via photon–electron coupling on nanostructures. PINEM has been applied in various fields of study, from materials science to biological imaging, exploiting the unique spatial, energy, and temporal characteristics of the PINEM electrons gained by interaction with a “single” light pulse. The further potential of photon-gated PINEM electrons in probing ultrafast dynamics of matter and the optical gating of electrons by invoking a “second” optical pulse has previously been proposed and examined theoretically in our group. Here, we experimentally demonstrate this photon-gating technique, and, through diffraction, visualize the phase transition dynamics in vanadium dioxide nanoparticles. With optical gating of PINEM electrons, imaging temporal resolution was improved by a factor of 3 or better, being limited only by the optical pulse widths. This work enables the combination of the high spatial resolution of electron microscopy and the ultrafast temporal response of the optical pulses, which provides a promising approach to attain the resolution of few femtoseconds and attoseconds in UEM. PMID:26438835

Method for detecting and distinguishing between specific types of environmental radiation using a high pressure ionization chamber with pulse-mode readout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Degtiarenko, Pavel V.

An environmental radiation detector for detecting and distinguishing between all types of environmental radiation, including photons, charged particles, and neutrons. A large volume high pressure ionization chamber (HPIC) includes BF.sub.3 gas at a specific concentration to render the radiation detector sensitive to the reactions of neutron capture in Boron-10 isotope. A pulse-mode readout is connected to the ionization chamber capable of measuring both the height and the width of the pulse. The heavy charged products of the neutron capture reaction deposit significant characteristic energy of the reaction in the immediate vicinity of the reaction in the gas, producing a signalmore » with a pulse height proportional to the reaction energy, and a narrow pulse width corresponding to the essentially pointlike energy deposition in the gas. Readout of the pulse height and the pulse width parameters of the signals enables distinguishing between the different types of environmental radiation, such as gamma (x-rays), cosmic muons, and neutrons.« less

MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-01-20

An electronic circuit is presented for automatically computing the product of two selected variables by multiplying the voltage pulses proportional to the variables. The multiplier circuit has a plurality of parallel resistors of predetermined values connected through separate gate circults between a first input and the output terminal. One voltage pulse is applied to thc flrst input while the second voltage pulse is applied to control circuitry for the respective gate circuits. Thc magnitude of the second voltage pulse selects the resistors upon which the first voltage pulse is imprcssed, whereby the resultant output voltage is proportional to the product of the input voltage pulses

A model Ni-Al-Mo superalloy studied by ultraviolet pulsed-laser-assisted local-electrode atom-probe tomography.

PubMed

Tu, Yiyou; Plotnikov, Elizaveta Y; Seidman, David N

2015-04-01

This study investigates the effects of the charge-state ratio of evaporated ions on the accuracy of local-electrode atom-probe (LEAP) tomographic compositional and structural analyses, which employs a picosecond ultraviolet pulsed laser. Experimental results demonstrate that the charge-state ratio is a better indicator of the best atom-probe tomography (APT) experimental conditions compared with laser pulse energy. The thermal tails in the mass spectra decrease significantly, and the mass resolving power (m/Δm) increases by 87.5 and 185.7% at full-width half-maximum and full-width tenth-maximum, respectively, as the laser pulse energy is increased from 5 to 30 pJ/pulse. The measured composition of this alloy depends on the charge-state ratio of the evaporated ions, and the most accurate composition is obtained when Ni2+/Ni+ is in the range of 0.3-20. The γ(f.c.c.)/γ'(L12) interface is quantitatively more diffuse when determined from the measured concentration profiles for higher laser pulse energies. Conclusions of the APT compositional and structural analyses utilizing the same suitable charge-state ratio are more comparable than those collected with the same laser pulse energy.

Surface ablation of aluminum and silicon by ultrashort laser pulses of variable width

NASA Astrophysics Data System (ADS)

Zayarny, D. A.; Ionin, A. A.; Kudryashov, S. I.; Makarov, S. V.; Kuchmizhak, A. A.; Vitrik, O. B.; Kulchin, Yu. N.

2016-06-01

Single-shot thresholds of surface ablation of aluminum and silicon via spallative ablation by infrared (IR) and visible ultrashort laser pulses of variable width τlas (0.2-12 ps) have been measured by optical microscopy. For increasing laser pulse width τlas < 3 ps, a drastic (threefold) drop of the ablation threshold of aluminum has been observed for visible pulses compared to an almost negligible threshold variation for IR pulses. In contrast, the ablation threshold in silicon increases threefold with increasing τlas for IR pulses, while the corresponding thresholds for visible pulses remained almost constant. In aluminum, such a width-dependent decrease in ablation thresholds has been related to strongly diminished temperature gradients for pulse widths exceeding the characteristic electron-phonon thermalization time. In silicon, the observed increase in ablation thresholds has been ascribed to two-photon IR excitation, while in the visible range linear absorption of the material results in almost constant thresholds.

A Novel Transcranial Magnetic Stimulator Inducing Near Rectangular Pulses with Controllable Pulse Width (cTMS)

PubMed Central

Jalinous, Reza; Lisanby, Sarah H.

2013-01-01

A novel transcranial magnetic stimulation (TMS) device with controllable pulse width (PW) and near rectangular pulse shape (cTMS) is described. The cTMS device uses an insulated gate bipolar transistor (IGBT) with appropriate snubbers to switch coil currents up to 7 kA, enabling PW control from 5 μs to over 100 μs. The near-rectangular induced electric field pulses use 22–34% less energy and generate 67–72% less coil heating compared to matched conventional cosine pulses. CTMS is used to stimulate rhesus monkey motor cortex in vivo with PWs of 20 to 100 μs, demonstrating the expected decrease of threshold pulse amplitude with increasing PW. The technological solutions used in the cTMS prototype can expand functionality, and reduce power consumption and coil heating in TMS, enhancing its research and therapeutic applications. PMID:18232369

Advanced investigation of two-phase charge-coupled devices

NASA Technical Reports Server (NTRS)

Kosonocky, W. F.; Carnes, J. E.

1973-01-01

The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.

Quantum computers based on electron spins controlled by ultrafast off-resonant single optical pulses.

PubMed

Clark, Susan M; Fu, Kai-Mei C; Ladd, Thaddeus D; Yamamoto, Yoshihisa

2007-07-27

We describe a fast quantum computer based on optically controlled electron spins in charged quantum dots that are coupled to microcavities. This scheme uses broadband optical pulses to rotate electron spins and provide the clock signal to the system. Nonlocal two-qubit gates are performed by phase shifts induced by electron spins on laser pulses propagating along a shared waveguide. Numerical simulations of this scheme demonstrate high-fidelity single-qubit and two-qubit gates with operation times comparable to the inverse Zeeman frequency.

A pulse-burst laser system for a high-repetition-rate Thomson scattering diagnostic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Den Hartog, D. J.; Jiang, N.; Lempert, W. R.

2008-10-15

A ''pulse-burst'' laser system is being constructed for addition to the Thomson scattering diagnostic on the Madison Symmetric Torus (MST) reversed-field pinch. This laser is designed to produce a burst of up to 200 approximately 1 J Q-switched pulses at repetition frequencies 5-250 kHz. This laser system will operate at 1064 nm and is a master oscillator, power amplifier. The master oscillator is a compact diode-pumped Nd:YVO{sub 4} laser, intermediate amplifier stages are flashlamp-pumped Nd:YAG, and final stages will be flashlamp-pumped Nd:glass (silicate). Variable pulse width drive (0.3-20 ms) of the flashlamps is accomplished by insulated-gate bipolar transistor switching ofmore » large electrolytic capacitor banks. The burst train of laser pulses will enable the study of electron temperature (T{sub e}) and electron density (n{sub e}) dynamics in a single MST shot, and with ensembling, will enable correlation of T{sub e} and n{sub e} fluctuations with other fluctuating quantities.« less

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

2016-09-01

Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

Effects of charge noise on a pulse-gated singlet-triplet S - T_ qubit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Zhenyi; Wu, X.; Ward, D. R.

Here, we study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We also show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there ismore » only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory also agrees with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.« less

Effects of charge noise on a pulse-gated singlet-triplet S - T_ qubit

DOE PAGES

Qi, Zhenyi; Wu, X.; Ward, D. R.; ...

2017-09-11

Here, we study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We also show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there ismore » only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory also agrees with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.« less

Non-Volatile High Speed & Low Power Charge Trapping Devices

NASA Astrophysics Data System (ADS)

Kim, Moon Kyung; Tiwari, Sandip

2007-06-01

We report the operational characteristics of ultra-small-scaled SONOS (below 50 nm gate width and length) and SiO2/SiO2 structural devices with 0.5 um gate width and length where trapping occurs in a very narrow region. The experimental work summarizes the memory characteristics of retention time, endurance cycles, and speed in SONOS and SiO2/SiO2 structures. Silicon nitride has many defects to hold electrons as charge storage media in SONOS memory. Defects are also incorporated during growth and deposition in device processing. Our experiments show that the interface between two oxides, one grown and one deposited, provides a remarkable media for electron storage with a smaller gate stack and thus lower operating voltage. The exponential dependence of the time on the voltage is reflected in the characteristic energy. It is ˜0.44 eV for the write process and ˜0.47 eV for the erase process in SiO2/SiO2 structural device which is somewhat more efficient than those of SONOS structure memory.

Nanosecond Time-Resolved Microscopic Gate-Modulation Imaging of Polycrystalline Organic Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Matsuoka, Satoshi; Tsutsumi, Jun'ya; Matsui, Hiroyuki; Kamata, Toshihide; Hasegawa, Tatsuo

2018-02-01

We develop a time-resolved microscopic gate-modulation (μ GM ) imaging technique to investigate the temporal evolution of the channel current and accumulated charges in polycrystalline pentacene thin-film transistors (TFTs). A time resolution of as high as 50 ns is achieved by using a fast image-intensifier system that could amplify a series of instantaneous optical microscopic images acquired at various time intervals after the stepped gate bias is switched on. The differential images obtained by subtracting the gate-off image allows us to acquire a series of temporal μ GM images that clearly show the gradual propagation of both channel charges and leaked gate fields within the polycrystalline channel layers. The frontal positions for the propagations of both channel charges and leaked gate fields coincide at all the time intervals, demonstrating that the layered gate dielectric capacitors are successively transversely charged up along the direction of current propagation. The initial μ GM images also indicate that the electric field effect is originally concentrated around a limited area with a width of a few micrometers bordering the channel-electrode interface, and that the field intensity reaches a maximum after 200 ns and then decays. The time required for charge propagation over the whole channel region with a length of 100 μ m is estimated at about 900 ns, which is consistent with the measured field-effect mobility and the temporal-response model for organic TFTs. The effect of grain boundaries can be also visualized by comparison of the μ GM images for the transient and the steady states, which confirms that the potential barriers at the grain boundaries cause the transient shift in the accumulated charges or the transient accumulation of additional charges around the grain boundaries.

Current conduction in junction gate field effect transistors. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Kim, C.

1970-01-01

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors

NASA Astrophysics Data System (ADS)

Cao, Qing; Tersoff, Jerry; Han, Shu-Jen; Penumatcha, Ashish V.

2015-08-01

In field-effect transistors, the inherent randomness of dopants and other charges is a major cause of device-to-device variability. For a quasi-one-dimensional device such as carbon nanotube transistors, even a single charge can drastically change the performance, making this a critical issue for their adoption as a practical technology. Here we calculate the effect of the random charges at the gate-oxide surface in ballistic carbon nanotube transistors, finding good agreement with the variability statistics in recent experiments. A combination of experimental and simulation results further reveals that these random charges are also a major factor limiting the subthreshold swing for nanotube transistors fabricated on thin gate dielectrics. We then establish that the scaling of the nanotube device uniformity with the gate dielectric, fixed-charge density, and device dimension is qualitatively different from conventional silicon transistors, reflecting the very different device physics of a ballistic transistor with a quasi-one-dimensional channel. The combination of gate-oxide scaling and improved control of fixed-charge density should provide the uniformity needed for large-scale integration of such novel one-dimensional transistors even at extremely scaled device dimensions.

Miniaturized two-stack Blumlein pulser with a variable repetition-rate for non-thermal irreversible-electroporation experiments

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Jeong, Jin-Young; Hong, Dongpyo; Park, Seunghyuk; Park, Gun-Sik

2017-01-01

Non-thermal irreversible electroporation (NTIRE) to avoid thermal damage to cells during intense DC ns pulsed electric fields (nsPEFs) is a recent modality for medical applications. This mechanism, related to bioelectrical dynamics of the cell, is linked to the effect of a DC electric field and a threshold effect with an electrically stimulated membrane for the charge distribution in the cell. To create the NTIRE condition, the pulse width of the nsPEF should be shorter than the charging time constant of the membrane related to the cell radius, membrane capacitance, cytoplasm resistivity, and medium resistivity. It is necessary to design and fabricate a very intense nanosecond DC electric field pulser that is capable of producing voltages up to the level of 100 kV/cm with an artificial pulse width (˜ns) with controllable repetition rates. Many devices to generate intense DC nsPEF using various pulse-forming line technologies have been introduced thus far. However, the previous Blumlein pulse-generating devices are clearly inefficient due to the energy loss between the input voltage and the output voltage. An improved two-stage stacked Blumlein pulse-forming line can overcome this limitation and decrease the energy loss from a DC power supply. A metal oxide silicon field-effect transistor switch with a fast rise and fall time would enable a high repetition rate (max. 100 kHz) and good endurance against very high voltages (DC ˜ 30 kV). The load is designed to match the sample for exposure to cell suspensions consisting of a 200 Ω resistor matched with a Blumlein circuit and two electrodes without the characteristic RC time effect of the circuit (capacitance =0.174 pF).

Time gating for energy selection and scatter rejection: High-energy pulsed neutron imaging at LANSCE

NASA Astrophysics Data System (ADS)

Swift, Alicia; Schirato, Richard; McKigney, Edward; Hunter, James; Temple, Brian

2015-09-01

The Los Alamos Neutron Science Center (LANSCE) is a linear accelerator in Los Alamos, New Mexico that accelerates a proton beam to 800 MeV, which then produces spallation neutron beams. Flight path FP15R uses a tungsten target to generate neutrons of energy ranging from several hundred keV to ~600 MeV. The beam structure has micropulses of sub-ns width and period of 1.784 ns, and macropulses of 625 μs width and frequency of either 50 Hz or 100 Hz. This corresponds to 347 micropulses per macropulse, or 1.74 x 104 micropulses per second when operating at 50 Hz. Using a very fast, cooled ICCD camera (Princeton Instruments PI-Max 4), gated images of various objects were obtained on FP15R in January 2015. Objects imaged included blocks of lead and borated polyethylene; a tungsten sphere; and a tungsten, polyethylene, and steel cylinder. Images were obtained in 36 min or less, with some in as little as 6 min. This is novel because the gate widths (some as narrow as 10 ns) were selected to reject scatter and other signal not of interest (e.g. the gamma flash that precedes the neutron pulse), which has not been demonstrated at energies above 14 MeV. This proof-of-principle experiment shows that time gating is possible above 14MeV and is useful for selecting neutron energy and reducing scatter, thus forming clearer images. Future work (simulation and experimental) is being undertaken to improve camera shielding and system design and to precisely determine optical properties of the imaging system.

Missing pulse detector for a variable frequency source

DOEpatents

Ingram, Charles B.; Lawhorn, John H.

1979-01-01

A missing pulse detector is provided which has the capability of monitoring a varying frequency pulse source to detect the loss of a single pulse or total loss of signal from the source. A frequency-to-current converter is used to program the output pulse width of a variable period retriggerable one-shot to maintain a pulse width slightly longer than one-half the present monitored pulse period. The retriggerable one-shot is triggered at twice the input pulse rate by employing a frequency doubler circuit connected between the one-shot input and the variable frequency source being monitored. The one-shot remains in the triggered or unstable state under normal conditions even though the source period is varying. A loss of an input pulse or single period of a fluctuating signal input will cause the one-shot to revert to its stable state, changing the output signal level to indicate a missing pulse or signal.

Area scaling investigations of charging phenomena. [discharge pulse characteristics of Teflon thermal control tape

NASA Technical Reports Server (NTRS)

Aron, P. R.; Staskus, J. V.

1979-01-01

The charging and discharging behavior of square, planar samples of silvered, fluorinated ethylene-propylene (FEP) Teflon thermal control tape was measured. The equilibrium voltage profiles scaled with the width of the sample. A wide range of discharge pulse characteristics was observed, and the area dependences of the peak current, charge, and pulse widths are described. The observed scaling of the peak currents with area was weaker than that previously reported. The discharge parameters were observed to depend strongly on the grounding impedance and the beam voltage. Preliminary results suggest that measuring only the return-current-pulse characteristics is not adequate to describe the spacecraft discharging behavior of this material. The seams between strips of tape appear to play a fundamental role in determining the discharging behavior. An approximate propagation velocity for the charge cleanoff was extracted from the data. The samples - 232, 1265, and 5058 square centimeters in area - were exposed at ambient temperature to a 1- to 2-nA/sq cm electron beam at energies of 10, 15, and 20 kilovolts in a 19-meter-long by 4.6-meter-diameter simulation facility at the Lewis Research Center.

Effect of channel-width and chirality on graphene field-effect transistor based real-time biomolecule sensing

NASA Astrophysics Data System (ADS)

Lyu, Letian; Jaswal, Perveshwer; Xu, Guangyu

2018-03-01

Graphene field-effect transistors (GFET) hold promise in biomolecule sensing due to the outstanding properties of graphene materials. Charges in biomolecules are transduced into a change in the GFET current, which allows real-time monitoring of the biomolecule concentrations. Here we theoretically evaluate the performance of GFET based real-time biomolecule sensing, aiming to better understand the width-scaling limit in GFET based biosensors. In particular, we study the effect of the channel-width and the chirality on FET sensitivity by taking the percentage change of the FET current per unit charge density as the sensing signal. Firstly, GFETs made of graphene nanoribbons (GNR) and graphene sheets (GS) show comparable sensing signals to each other when gated at 1011 - 1012 cm-2 carrier densities. Sensing signals in GNRs are enhanced when gated near the sub-band thresholds, and increase their values in wider GNRs due to the change in device conductance and quantum capacitance. Secondly, the GNR chirality is found to fine tune the sensing signals. Armchair GNRs with smaller energy bandgaps appear to have an enhanced sensing signal close to 1011 cm-2 carrier densities. These results may help understand the scaling limit in GFET based biosensors along the width direction, and shed light on forming all-electrical bio-arrays.

Fractional channel multichannel analyzer

DOEpatents

Brackenbush, L.W.; Anderson, G.A.

1994-08-23

A multichannel analyzer incorporating the features of the present invention obtains the effect of fractional channels thus greatly reducing the number of actual channels necessary to record complex line spectra. This is accomplished by using an analog-to-digital converter in the asynchronous mode, i.e., the gate pulse from the pulse height-to-pulse width converter is not synchronized with the signal from a clock oscillator. This saves power and reduces the number of components required on the board to achieve the effect of radically expanding the number of channels without changing the circuit board. 9 figs.

Fractional channel multichannel analyzer

DOEpatents

Brackenbush, Larry W.; Anderson, Gordon A.

1994-01-01

A multichannel analyzer incorporating the features of the present invention obtains the effect of fractional channels thus greatly reducing the number of actual channels necessary to record complex line spectra. This is accomplished by using an analog-to-digital converter in the asynscronous mode, i.e., the gate pulse from the pulse height-to-pulse width converter is not synchronized with the signal from a clock oscillator. This saves power and reduces the number of components required on the board to achieve the effect of radically expanding the number of channels without changing the circuit board.

Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klymenko, M. V.; Klein, M.; Levine, R. D.

2016-07-14

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states correspondsmore » to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.« less

Feedback-tuned, noise resilient gates for encoded spin qubits

NASA Astrophysics Data System (ADS)

Bluhm, Hendrik

Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

NEGATIVE GATE GENERATOR

DOEpatents

Jones, C.S.; Eaton, T.E.

1958-02-01

This patent relates to pulse generating circuits and more particularly to rectangular pulse generators. The pulse generator of the present invention incorporates thyratrons as switching elements to discharge a first capacitor through a load resistor to initiate and provide the body of a Pulse, and subsequently dlscharge a second capacitor to impress the potential of its charge, with opposite potential polarity across the load resistor to terminate the pulse. Accurate rectangular pulses in the millimicrosecond range are produced across a low impedance by this generator.

Auditory-nerve single-neuron thresholds to electrical stimulation from scala tympani electrodes.

PubMed

Parkins, C W; Colombo, J

1987-12-31

Single auditory-nerve neuron thresholds were studied in sensory-deafened squirrel monkeys to determine the effects of electrical stimulus shape and frequency on single-neuron thresholds. Frequency was separated into its components, pulse width and pulse rate, which were analyzed separately. Square and sinusoidal pulse shapes were compared. There were no or questionably significant threshold differences in charge per phase between sinusoidal and square pulses of the same pulse width. There was a small (less than 0.5 dB) but significant threshold advantage for 200 microseconds/phase pulses delivered at low pulse rates (156 pps) compared to higher pulse rates (625 pps and 2500 pps). Pulse width was demonstrated to be the prime determinant of single-neuron threshold, resulting in strength-duration curves similar to other mammalian myelinated neurons, but with longer chronaxies. The most efficient electrical stimulus pulse width to use for cochlear implant stimulation was determined to be 100 microseconds/phase. This pulse width delivers the lowest charge/phase at threshold. The single-neuron strength-duration curves were compared to strength-duration curves of a computer model based on the specific anatomy of auditory-nerve neurons. The membrane capacitance and resulting chronaxie of the model can be varied by altering the length of the unmyelinated termination of the neuron, representing the unmyelinated portion of the neuron between the habenula perforata and the hair cell. This unmyelinated segment of the auditory-nerve neuron may be subject to aminoglycoside damage. Simulating a 10 micron unmyelinated termination for this model neuron produces a strength-duration curve that closely fits the single-neuron data obtained from aminoglycoside deafened animals. Both the model and the single-neuron strength-duration curves differ significantly from behavioral threshold data obtained from monkeys and humans with cochlear implants. This discrepancy can best be explained by the involvement of higher level neurologic processes in the behavioral responses. These findings suggest that the basic principles of neural membrane function must be considered in developing or analyzing electrical stimulation strategies for cochlear prostheses if the appropriate stimulation of frequency specific populations of auditory-nerve neurons is the objective.

Composite pulses robust against charge noise and magnetic field noise for universal control of a singlet-triplet qubit

NASA Astrophysics Data System (ADS)

Wang, Xin; Barnes, Edwin; Kestner, Jason P.; Bishop, Lev S.; Das Sarma, Sankar

2013-03-01

We generalize our SUPCODE pulse sequences for singlet-triplet qubits to correct errors from imperfect control. This yields gates that are simultaneously corrected for both charge noise and magnetic field gradient fluctuations, addressing the two dominant T2* processes. By using this more efficient version of SUPCODE, we are able to introduce this capability while also substantially reducing the overall pulse time compared to the previous sequence. We show that our sequence remains realistic under experimental constraints such as finite bandwidth. This work is supported by LPS-NSA-CMTC, IARPA-MQCO and CNAM.

Composite multi-qubit gates dynamically corrected against charge noise and magnetic field noise for singlet-triplet qubits

NASA Astrophysics Data System (ADS)

Kestner, Jason; Barnes, Edwin; Wang, Xin; Bishop, Lev; Das Sarma, Sankar

2013-03-01

We use previously described single-qubit SUPCODE pulses on both intra-qubit and inter-qubit exchange couplings, integrated with existing strategies such as BB1, to theoretically construct a CNOT gate that is robust against both charge noise and magnetic field gradient fluctuations. We show how this allows scalable, high-fidelity implementation of arbitrary multi-qubit operations using singlet-triplet spin qubits in the presence of experimentally realistic noise. This work is supported by LPS-NSA-CMTC, IARPA-MQCO and CNAM.

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

NASA Astrophysics Data System (ADS)

Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.

2004-02-01

We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.

Injector for the University of Maryland Electron Ring (UMER)

NASA Astrophysics Data System (ADS)

Kehne, D.; Godlove, T.; Haldemann, P.; Bernal, S.; Guharay, S.; Kishek, R.; Li, Y.; O'Shea, P.; Reiser, M.; Yun, V.; Zou, Y.; Haber, I.

2001-05-01

The electron beam injector constructed by FM technologies for the University of Maryland Electron Ring (UMER) program is described. The program will use an electron beam to model space-charge-dominated ion beams in a recirculating linac for heavy ion inertial fusion, as well as for high-current muon colliders. The injector consists of a 10 keV, 100 mA electron gun with 50-100 nsec pulse width and a repetition rate of 120 Hz. The e-gun system includes a 6-mask, rotatable aperture plate, a Rogowski current monitor, an ion pump, and a gate valve. The injector beamline consists of a solenoid, a five-quadrupole matching section, two diagnostic chambers, and a fast current monitor. An independent diagnostic chamber also built for UMER will be used to measure horizontal and vertical emittance, current, energy, energy spread, and the evolution of the beam envelope and profile along the injector beamline.

Time-resolved electric force microscopy of charge traps in polycrystalline pentacene films

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2006-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al, Adv. Mater. 17 1410 (2005)]. We have extended their work by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We have also made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Integrated-rate kinetics data supports a charge trap mechanism which is second order in holes, e.g., holes trap in pairs, although the charge-trapping rate appears to depend on gate voltage.

Biased-probe-induced water ion injection into amorphous polymers investigated by electric force microscopy

NASA Astrophysics Data System (ADS)

Knorr, Nikolaus; Rosselli, Silvia; Miteva, Tzenka; Nelles, Gabriele

2009-06-01

Although charging of insulators by atomic force microscopy (AFM) has found widespread interest, often with data storage or nanoxerography in mind, less attention has been paid to the charging mechanism and the nature of the charge. Here we present a systematic study on charging of amorphous polymer films by voltage pulses applied to conducting AFM probes. We find a quadratic space charge limited current law of Kelvin probe force microscopy and electrostatic force microscopy peak volumes in pulse height, offset by a threshold voltage, and a power law in pulse width of positive exponents smaller than one. We interpret the results by a charging mechanism of injection and surface near accumulation of aqueous ions stemming from field induced water adsorption, with threshold voltages linked to the water affinities of the polymers.

A compact bipolar pulse-forming network-Marx generator based on pulse transformers.

PubMed

Zhang, Huibo; Yang, Jianhua; Lin, Jiajin; Yang, Xiao

2013-11-01

A compact bipolar pulse-forming network (PFN)-Marx generator based on pulse transformers is presented in this paper. The high-voltage generator consisted of two sets of pulse transformers, 6 stages of PFNs with ceramic capacitors, a switch unit, and a matched load. The design is characterized by the bipolar pulse charging scheme and the compact structure of the PFN-Marx. The scheme of bipolar charging by pulse transformers increased the withstand voltage of the ceramic capacitors in the PFNs and decreased the number of the gas gap switches. The compact structure of the PFN-Marx was aimed at reducing the parasitic inductance in the generator. When the charging voltage on the PFNs was 35 kV, the matched resistive load of 48 Ω could deliver a high-voltage pulse with an amplitude of 100 kV. The full width at half maximum of the load pulse was 173 ns, and its rise time was less than 15 ns.

Pulsed helium ionization detection system

DOEpatents

Ramsey, R.S.; Todd, R.A.

1985-04-09

A helium ionization detection system is provided which produces stable operation of a conventional helium ionization detector while providing improved sensitivity and linearity. Stability is improved by applying pulsed dc supply voltage across the ionization detector, thereby modifying the sampling of the detectors output current. A unique pulse generator is used to supply pulsed dc to the detector which has variable width and interval adjust features that allows up to 500 V to be applied in pulse widths ranging from about 150 nsec to about dc conditions.

Pulsed helium ionization detection system

DOEpatents

Ramsey, Roswitha S.; Todd, Richard A.

1987-01-01

A helium ionization detection system is provided which produces stable operation of a conventional helium ionization detector while providing improved sensitivity and linearity. Stability is improved by applying pulsed dc supply voltage across the ionization detector, thereby modifying the sampling of the detectors output current. A unique pulse generator is used to supply pulsed dc to the detector which has variable width and interval adjust features that allows up to 500 V to be applied in pulse widths ranging from about 150 nsec to about dc conditions.

Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte

PubMed Central

Guo, Liqiang; Wen, Juan; Ding, Jianning; Wan, Changjin; Cheng, Guanggui

2016-01-01

The excitatory postsynaptic potential (EPSP) of biological synapses is mimicked in indium-zinc-oxide synaptic transistors gated by methyl cellulose solid electrolyte. These synaptic transistors show excellent electrical performance at an operating voltage of 0.8 V, Ion/off ratio of 2.5 × 106, and mobility of 38.4 cm2/Vs. After this device is connected to a resistance of 4 MΩ in series, it exhibits excellent characteristics as an inverter. A threshold potential of 0.3 V is achieved by changing the gate pulse amplitude, width, or number, which is analogous to biological EPSP. PMID:27924838

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

DOE PAGES

Shirkhorshidian, A.; Bishop, N. C.; Dominguez, J.; ...

2015-04-30

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entiremore » range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.« less

Noise And Charge Transport In Carbon Nanotube Devices

NASA Astrophysics Data System (ADS)

Reza, Shahed; Huynh, Quyen T.; Bosman, Gijs; Sippel, Jennifer; Rinzler, Andrew G.

2005-11-01

The charge transport and noise properties of three terminal, gated devices containing multiple, single wall, metallic and semiconductor carbon nanotubes have been measured as a function of gate and drain bias at 300K. Using pulsed bias the metallic tubes could be burned sequentially enabling the separation of measured conductance and low frequency excess noise into metallic and semiconductor contributions. The relative low frequency excess noise of the metallic tubes was about a factor 100 lower than that of the semiconductor tubes, whereas the conductance of the metallic tubes was significantly higher (10 to 50 times) than that of the semiconductor tubes.

Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier.

PubMed

Klehr, A; Wenzel, H; Fricke, J; Bugge, F; Erbert, G

2014-10-06

We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the nanoseconds range as required by many applications. The MOPA consists of a distributed Bragg reflector (DBR) laser as master oscillator driven by a constant current and a ridge waveguide power amplifier (PA) which can be driven by a constant current (DC) or by rectangular current pulses with a width of 5 ns at a repetition frequency of 200 kHz. Under pulsed operation the amplifier acts as an optical gate, converting the CW input beam emitted by the DBR laser into a train of short amplified optical pulses. With this experimental MOPA arrangement no relaxation oscillations occur. A continuous wave power of 1 W under DC injection and a pulse power of 4 W under pulsed operation are reached. For both operational modes the optical spectrum of the emission of the amplifier exhibits a peak at a constant wavelength of 973.5 nm with a spectral width < 10 pm.

Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

NASA Astrophysics Data System (ADS)

Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

2018-01-01

In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

Improved two-photon imaging of living neurons in brain tissue through temporal gating

PubMed Central

Gautam, Vini; Drury, Jack; Choy, Julian M. C.; Stricker, Christian; Bachor, Hans-A.; Daria, Vincent R.

2015-01-01

We optimize two-photon imaging of living neurons in brain tissue by temporally gating an incident laser to reduce the photon flux while optimizing the maximum fluorescence signal from the acquired images. Temporal gating produces a bunch of ~10 femtosecond pulses and the fluorescence signal is improved by increasing the bunch-pulse energy. Gating is achieved using an acousto-optic modulator with a variable gating frequency determined as integral multiples of the imaging sampling frequency. We hypothesize that reducing the photon flux minimizes the photo-damage to the cells. Our results, however, show that despite producing a high fluorescence signal, cell viability is compromised when the gating and sampling frequencies are equal (or effectively one bunch-pulse per pixel). We found an optimum gating frequency range that maintains the viability of the cells while preserving a pre-set fluorescence signal of the acquired two-photon images. The neurons are imaged while under whole-cell patch, and the cell viability is monitored as a change in the membrane’s input resistance. PMID:26504651

Pulse sequences for suppressing leakage in single-qubit gate operations

NASA Astrophysics Data System (ADS)

Ghosh, Joydip; Coppersmith, S. N.; Friesen, Mark

2017-06-01

Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the coupling strength is unknown, e.g., when it is caused by noise. Here we show that simple pulse sequences can be used to strongly suppress leakage errors for a qubit embedded in a three-level system. As an example, we apply our scheme to the recently proposed charge quadrupole (CQ) qubit for quantum dots. These results provide a solution to a key challenge for fault-tolerant quantum computing with solid-state elements.

A self-timed multipurpose delay sensor for Field Programmable Gate Arrays (FPGAs).

PubMed

Osuna, Carlos Gómez; Ituero, Pablo; López-Vallejo, Marisa

2013-12-20

This paper presents a novel self-timed multi-purpose sensor especially conceived for Field Programmable Gate Arrays (FPGAs). The aim of the sensor is to measure performance variations during the life-cycle of the device, such as process variability, critical path timing and temperature variations. The proposed topology, through the use of both combinational and sequential FPGA elements, amplifies the time of a signal traversing a delay chain to produce a pulse whose width is the sensor's measurement. The sensor is fully self-timed, avoiding the need for clock distribution networks and eliminating the limitations imposed by the system clock. One single off- or on-chip time-to-digital converter is able to perform digitization of several sensors in a single operation. These features allow for a simplified approach for designers wanting to intertwine a multi-purpose sensor network with their application logic. Employed as a temperature sensor, it has been measured to have an error of  ±0.67 °C, over the range of 20-100 °C, employing 20 logic elements with a 2-point calibration.

A Self-Timed Multipurpose Delay Sensor for Field Programmable Gate Arrays (FPGAs)

PubMed Central

Osuna, Carlos Gómez; Ituero, Pablo; López-Vallejo, Marisa

2014-01-01

This paper presents a novel self-timed multi-purpose sensor especially conceived for Field Programmable Gate Arrays (FPGAs). The aim of the sensor is to measure performance variations during the life-cycle of the device, such as process variability, critical path timing and temperature variations. The proposed topology, through the use of both combinational and sequential FPGA elements, amplifies the time of a signal traversing a delay chain to produce a pulse whose width is the sensor's measurement. The sensor is fully self-timed, avoiding the need for clock distribution networks and eliminating the limitations imposed by the system clock. One single off- or on-chip time-to-digital converter is able to perform digitization of several sensors in a single operation. These features allow for a simplified approach for designers wanting to intertwine a multi-purpose sensor network with their application logic. Employed as a temperature sensor, it has been measured to have an error of ±0.67 °C, over the range of 20–100 °C, employing 20 logic elements with a 2-point calibration. PMID:24361927

Closed-loop pulsed helium ionization detector

DOEpatents

Ramsey, Roswitha S.; Todd, Richard A.

1987-01-01

A helium ionization detector for gas chromatography is operated in a constant current, pulse-modulated mode by configuring the detector, electrometer and a high voltage pulser in a closed-loop control system. The detector current is maintained at a fixed level by varying the frequency of fixed-width, high-voltage bias pulses applied to the detector. An output signal proportional to the pulse frequency is produced which is indicative of the charge collected for a detected species.

Generation of high-intensity sub-30 as pulses by inhomogeneous polarization gating technology in bowtie-shaped nanostructure

NASA Astrophysics Data System (ADS)

Feng, Liqiang; Feng, A. Yuanzi

2018-04-01

The generation of high-order harmonics and single attosecond pulses (SAPs) from He atom driven by the inhomogeneous polarization gating technology in a bowtie-shaped nanostructure is theoretically investigated. The results show that by the proper addition of bowtie-shaped nanostructure along the driven laser polarization direction, the harmonic emission becomes sensitive to the position of the laser field, and the harmonics emitted at the maximum orders that generate SAPs occur only at one side of the region inside the nanostructure. As a result, not only the harmonic cutoff can be extended, but also the modulations of the harmonics can be decreased, showing a carrier envelope phase independent harmonic cutoff with a bandwidth of 310 eV. Further, with the proper introduction of an ultraviolet pulse, the harmonic yield can be enhanced by 2 orders of magnitude. Finally, by the Fourier transformation of the selected harmonics, some SAPs with a full width at half maximum of sub-30 as can be obtained.

Current-driven plasmonic boom instability in three-dimensional gated periodic ballistic nanostructures

NASA Astrophysics Data System (ADS)

Aizin, G. R.; Mikalopas, J.; Shur, M.

2016-05-01

An alternative approach of using a distributed transmission line analogy for solving transport equations for ballistic nanostructures is applied for solving the three-dimensional problem of electron transport in gated ballistic nanostructures with periodically changing width. The structures with varying width allow for modulation of the electron drift velocity while keeping the plasma velocity constant. We predict that in such structures biased by a constant current, a periodic modulation of the electron drift velocity due to the varying width results in the instability of the plasma waves if the electron drift velocity to plasma wave velocity ratio changes from below to above unity. The physics of such instability is similar to that of the sonic boom, but, in the periodically modulated structures, this analog of the sonic boom is repeated many times leading to a larger increment of the instability. The constant plasma velocity in the sections of different width leads to resonant excitation of the unstable plasma modes with varying bias current. This effect (that we refer to as the superplasmonic boom condition) results in a strong enhancement of the instability. The predicted instability involves the oscillating dipole charge carried by the plasma waves. The plasmons can be efficiently coupled to the terahertz electromagnetic radiation due to the periodic geometry of the gated structure. Our estimates show that the analyzed instability should enable powerful tunable terahertz electronic sources.

In Vitro Comparison of Holmium Lasers: Evidence for Shorter Fragmentation Time and Decreased Retropulsion Using a Modern Variable-pulse Laser.

PubMed

Bell, John Roger; Penniston, Kristina L; Nakada, Stephen Y

2017-09-01

To compare the performance of variable- and fixed-pulse lasers on stone phantoms in vitro. Seven-millimeter stone phantoms were made to simulate calcium oxalate monohydrate stones using BegoStone plus. The in vitro setting was created with a clear polyvinyl chloride tube. For each trial, a stone phantom was placed at the open end of the tubing. The Cook Rhapsody H-30 variable-pulse laser was tested on both long- and short-pulse settings and was compared to the Dornier H-20 fixed-pulse laser; 5 trials were conducted for each trial arm. Fragmentation was accomplished with the use of a flexible ureteroscope and a 273-micron holmium laser fiber using settings of 1 J × 12 Hz. The treatment time (in minute) for complete fragmentation was recorded as was the total retropulsion distance (in centimeter) during treatment. Laser fibers were standardized for all repetitions. The treatment time was significantly shorter with the H-30 vs the H-20 laser (14.3 ± 2.5 vs 33.1 ± 8.9 minutes, P = .008). There was no difference between the treatment times using the long vs short pulse widths of the H-30 laser (14.4 ± 3.4 vs 14.3 ± 1.7 minutes, P = .93). Retropulsion differed by laser type and pulse width, H-30 long pulse (15.8 ± 5.7 cm), H-30 short pulse (54.8 ± 7.1 cm), and H-20 (33.2 ± 12.5 cm) (P <.05). The H-30 laser fragmented stone phantoms in half the time of the H-20 laser regardless of the pulse width. Retropulsion effects differed between the lasers, with the H-30 causing the least retropulsion. Longer pulse widths result in less stone retropulsion. Copyright © 2017 Elsevier Inc. All rights reserved.

Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes

NASA Astrophysics Data System (ADS)

Azuma, Yasuo; Sakamoto, Masanori; Teranishi, Toshiharu; Majima, Yutaka

2016-11-01

Floating gate memory operations are demonstrated in a single-electron transistor (SET) fabricated by a chemical assembly using the Au nanogap electrodes and the chemisorbed Au nanoparticles. By applying pulse voltages to the control gate, phase shifts were clearly and stably observed both in the Coulomb oscillations and in the Coulomb diamonds. Writing and erasing operations on the floating gate memory were reproducibly observed, and the charges on the floating gate electrodes were maintained for at least 12 h. By considering the capacitance of the floating gate electrode, the number of electrons in the floating gate electrode was estimated as 260. Owing to the stability of the fabricated SET, these writing and erasing operations on the floating gate memory can be applied to reconfigurable SET circuits fabricated by a chemically assembled technique.

Power supply circuit for an ion engine sequentially operated power inverters

NASA Technical Reports Server (NTRS)

Cardwell, Jr., Gilbert I. (Inventor)

2000-01-01

A power supply circuit for an ion engine suitable for a spacecraft has a voltage bus having input line and a return line. The power supply circuit includes a pulse width modulation circuit. A plurality of bridge inverter circuits is coupled to the bus and the pulse width modulation circuit. The pulse width modulation circuit generates operating signals having a variable duty cycle. Each bridge inverter has a primary winding and a secondary winding. Each secondary winding is coupled to a rectifier bridge. Each secondary winding is coupled in series with another of the plurality of rectifier bridges.

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

PubMed Central

Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

2016-01-01

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density. PMID:27553518

Steering population transfer of the Na2 molecule by an ultrashort pulse train

NASA Astrophysics Data System (ADS)

Niu, Dong-Hua; Wang, Shuo; Zhan, Wei-Shen; Tao, Hong-Cai; Wang, Si-Qi

2018-05-01

We theoretically investigate the complete population transfer among quantum states of the Na2 molecule using ultrashort pulse trains using the time-dependent wave packet method. The population accumulation of the target state can be steered by controlling the laser parameters, such as the variable pulse pairs, the different pulse widths, the time delays and the repetition period between two contiguous pulses; in particular, the pulse pairs and the pulse widths have a great effect on the population transfer. The calculations show that the ultrashort pulse train is a feasible solution, which can steer the population transfer from the initial state to the target state efficiently with lower peak intensities.

Improving the gate fidelity of capacitively coupled spin qubits

NASA Astrophysics Data System (ADS)

Wang, Xin; Barnes, Edwin

2015-03-01

Precise execution of quantum gates acting on two or multiple qubits is essential to quantum computation. For semiconductor spin qubits coupled via capacitive interaction, the best fidelity for a two-qubit gate demonstrated so far is around 70%, insufficient for fault-tolerant quantum computation. In this talk we present control protocols that may substantially improve the robustness of two-qubit gates against both nuclear noise and charge noise. Our pulse sequences incorporate simultaneous dynamical decoupling protocols and are simple enough for immediate experimental realization. Together with existing control protocols for single-qubit gates, our results constitute an important step toward scalable quantum computation using spin qubits. This work is done in collaboration with Sankar Das Sarma and supported by LPS-NSA-CMTC and IARPA-MQCO.

FG Width Scalability of the 3-D Vertical FG NAND Using the Sidewall Control Gate (SCG)

NASA Astrophysics Data System (ADS)

Seo, Moon-Sik; Endoh, Tetsuo

Recently, the 3-D vertical Floating Gate (FG) type NAND cell arrays with the Sidewall Control Gate (SCG), such as ESCG, DC-SF and S-SCG, are receiving attention to overcome the reliability issues of Charge Trap (CT) type device. Using this novel cell structure, highly reliable flash cell operations were successfully implemented without interference effect on the FG type cell. However, the 3-D vertical FG type cell has large cell size by about 60% for the cylindrical FG structure. In this point of view, we intensively investigate the scalability of the FG width of the 3-D vertical FG NAND cells. In case of the planar FG type NAND cell, the FG height cannot be scaled down due to the necessity of obtaining sufficient coupling ratio and high program speed. In contrast, for the 3-D vertical FG NAND with SCG, the FG is formed cylindrically, which is fully covered with surrounded CG, and very high CG coupling ratio can be achieved. As results, the scaling of FG width of the 3-D vertical FG NAND cell with S-SCG can be successfully demonstrated at 10nm regime, which is almost the same as the CT layer of recent BE-SONOS NAND.

Picosecond imaging of inertial confinement fusion plasmas using electron pulse-dilation

NASA Astrophysics Data System (ADS)

Hilsabeck, T. J.; Nagel, S. R.; Hares, J. D.; Kilkenny, J. D.; Bell, P. M.; Bradley, D. K.; Dymoke-Bradshaw, A. K. L.; Piston, K.; Chung, T. M.

2017-02-01

Laser driven inertial confinement fusion (ICF) plasmas typically have burn durations on the order of 100 ps. Time resolved imaging of the x-ray self emission during the hot spot formation is an important diagnostic tool which gives information on implosion symmetry, transient features and stagnation time. Traditional x-ray gated imagers for ICF use microchannel plate detectors to obtain gate widths of 40-100 ps. The development of electron pulse-dilation imaging has enabled a 10X improvement in temporal resolution over legacy instruments. In this technique, the incoming x-ray image is converted to electrons at a photocathode. The electrons are accelerated with a time-varying potential that leads to temporal expansion as the electron signal transits the tube. This expanded signal is recorded with a gated detector and the effective temporal resolution of the composite system can be as low as several picoseconds. An instrument based on this principle, known as the Dilation X-ray Imager (DIXI) has been constructed and fielded at the National Ignition Facility. Design features and experimental results from DIXI will be presented.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

PULSE RATE DIVIDER

DOEpatents

McDonald, H.C. Jr.

1962-12-18

A compact pulse-rate divider circuit affording low impedance output and high input pulse repetition rates is described. The circuit features a single secondary emission tube having a capacitor interposed between its dynode and its control grid. An output pulse is produced at the anode of the tube each time an incoming pulse at the control grid drives the tube above cutoff and the duration of each output pulse corresponds to the charging time of the capacitor. Pulses incoming during the time the grid bias established by the discharging capacitor is sufficiently negative that the pulses are unable to drive the tube above cutoff do not produce output pulses at the anode; these pulses are lost and a dividing action is thus produced by the circuit. The time constant of the discharge path may be vanied to vary in turn the division ratio of the circuit; the time constant of the charging circuit may be varied to vary the width of the output pulses. (AEC)

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

PubMed

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

PubMed Central

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-01-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. PMID:27829663

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

PubMed

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Time Resolved Microscopy of Charge Trapping in Polycrystalline Pentacene

NASA Astrophysics Data System (ADS)

Jaquith, Michael; Muller, Erik; Marohn, John

2007-03-01

The microscopic mechanisms by which charges trap in organic electronic materials are poorly understood. Muller and Marohn recently showed that electric force microscopy (EFM) can be used to image trapped charge in working pentacene thin-film transistors [E. M. Muller et al., Adv. Mater. 17 1410 (2005)]. We have made a new discovery by imaging trapped charge in pentacene films with much larger grains. In contrast to the previous study in which charge was found to trap inhomogeneously throughout the transistor gap, we find microscopic evidence for a new trapping mechanism in which charges trap predominantly at the pentacene/metal interface in large-grained devices. We conclude that at least two charge trapping mechanisms are at play in polycrystalline pentacene. We have made localized measurements of the trap growth over time by performing pulsed-gate EFM experiments. Trap formation is not instantaneous, taking up to a second to complete. Furthermore, the charge-trapping rate depends strongly on gate voltage (or hole concentration). This kinetics data is consistent with the hypothesis that traps form by chemical reaction.

High performance thyratron driver with low jitter.

PubMed

Verma, Rishi; Lee, P; Springham, S V; Tan, T L; Rawat, R S

2007-08-01

We report the design and development of insulated gate bipolar junction transistor based high performance driver for operating thyratrons in grounded grid mode. With careful design, the driver meets the specification of trigger output pulse rise time less than 30 ns, jitter less than +/-1 ns, and time delay less than 160 ns. It produces a -600 V pulse of 500 ns duration (full width at half maximum) at repetition rate ranging from 1 Hz to 1.14 kHz. The developed module also facilitates heating and biasing units along with protection circuitry in one complete package.

A novel compact low impedance Marx generator with quasi-rectangular pulse output

NASA Astrophysics Data System (ADS)

Liu, Hongwei; Jiang, Ping; Yuan, Jianqiang; Wang, Lingyun; Ma, Xun; Xie, Weiping

2018-04-01

In this paper, a novel low impedance compact Marx generator with near-square pulse output based on the Fourier theory is developed. Compared with the traditional Marx generator, capacitors with different capacity have been used. It can generate a high-voltage quasi-rectangular pulse with a width of 100 ns at low impedance load, and it also has high energy density and power density. The generator consists of 16 modules. Each module comprises an integrative single-ended plastic case capacitor with a nominal value of 54 nF, four ceramic capacitors with a nominal value of 1.5 nF, a gas switch, a charging inductor, a grounding inductor, and insulators which provide mechanical support for all elements. In the module, different discharge periods from different capacitors add to the main circuit to form a quasi-rectangular pulse. The design process of the generator is analyzed, and the test results are provided here. The generator achieved pulse output with a rise time of 32 ns, pulse width of 120 ns, flat-topped width (95%-95%) of 50 ns, voltage of 550 kV, and power of 20 GW.

I-V Characteristics of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

Intracavity optically controlled crystal modulators for a CO/sub 2/ laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chizhevskii, V.N.; Churakov, V.V.

1986-06-01

This paper presents the results of studies of intracavity amplitude modulation of CW CO/sub 2/ laser radiation by its optically controlled absorption on nonequilibrium charge carriers (NCC) in KRS-5, KRS-6, and ZnSe crystals. The fundamental variables which determine the efficiency of such a modulation method are discussed. The radiation from a ruby laser with a 35-nsec pulse width was used to produce the nonequilibrium charge carriers. The variation of the modulation percentage of the intensity vs. excitation level at lambda = 0.6943 ..mu..m is shown for different powers of the CO/sub 2/ laser. The studies attest to the relatively highmore » efficiency of intracavity modulation based on IR radiation absorption by NCC in crystals, where the NCC are generated under the influence of external excitation.« less

Conference Digest LEOS Summer Topical Meetings 1992

DTIC Science & Technology

1992-12-09

of the circuit and determines the maximum frequency of operation. With...operating at a frequency of 335.48 MHz. The resultant timing jitter is determined by sending both pulse trains into a rotating mirror optical correlator with...length of 1.5 un and a gate width of 100 um. have a maximum transconductance of 160 mS/mm and a cut-off frequency of 10 GHz. To determine the

Measurement of Spectral Broadening in PTS-Polydiacetylene

NASA Astrophysics Data System (ADS)

Bhowmik, Achintya; Thakur, Mrinal

1998-03-01

PTS-polydiacetylene has significant potential for future applications in ultrafast all-optical switches and logic gates.(R. Quintero-Torres and M. Thakur, Appl. Phys. Lett., 66, 1310 (1995).) In this work, we have made detailed measurements of the instantaneous spectral line broadening in a 500 μm thick PTS single-crystal as a function of intensity and wavelength. A mode-locked Ti-Sapphire laser with 2 ps pulse-width at 82 MHz repetition rate, and a Nd:YAG laser with 60 ps pulse-width at 10 Hz repetition rate were used for measurements at 720-840 nm and 1064 nm wavelength respectively. The spectral bandwidth of the beam was recorded before and after passing through the PTS single-crystal by a high-resolution spectrometer. The nonlinear refractive index (n_2) of PTS as a function of wavelength has been determined from the spectral broadening data.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Technical Reports Server (NTRS)

Jones, C. W. (Editor)

1985-01-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

NASA Astrophysics Data System (ADS)

Jones, C. W.

1985-12-01

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

The impact of metal line reflections on through-wafer TPA SEE testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatrian, Ani; Roche, Nicolas J-H.; Dodds, Nathaniel A.

2015-12-17

Charge-collection experiments and simulations designed to quantify the effects of reflections from metallization during through-wafer TPA testing are presented. The results reveal a strong dependence on metal line width and metal line position inside the SiO 2 overlayer. The charge-collection enhancement is largest for the widest metal lines and the metal lines closest to the Si/SiO 2 interface. The charge-collection enhancement is also dependent on incident laser pulse energy, an effect that is a consequence of higher-order optical nonlinearities induced by the ultrashort optical pulses. However, for the lines further away from the Si/SiO 2 interface, variations in laser pulsemore » energies affect the charge-collection enhancement to a lesser degree. Z-scan measurements reveal that the peak charge collection occurs when the axial position of the laser focal point is inside the Si substrate. There is a downward trend in peak collected-charge enhancement with the increase in laser pulse energies for the metal lines further away from the Si/SiO 2 interface. Metallization enhances the collected charge by same amount regardless of the applied bias voltage. In conclusion, for thinner metal lines and laser pulse energies lower than 1 nJ, the collected charge enhancement due to metallization is negligible.« less

Isolated attosecond pulses in the water window

NASA Astrophysics Data System (ADS)

Chang, Zenghu

Millijoule level, few-cycle, carrier-envelope phase (CEP) stable Ti:Sapphire lasers have been the workhorse for the first generation attosecond light sources in the last decade. The spectral range of isolated attosecond pulses with sufficient photon flux for time-resolved pump-probe experiments has been limited to extreme ultraviolet (10 to 150 eV). The shortest pulses achieved are 67 as. The center wavelength of Ti:Sapphire lasers is 800 nm. It was demonstrated in 2001 that the cutoff photon energy of the high harmonic spectrum can be extended by increasing the center wavelength of the driving lasers. In recent years, mJ level, two-cycle, carrier-envelope phase stabilized lasers at 1.6 to 2.1 micron have been developed by compressing pulses from Optical Parametric Amplifiers with gas-filled hollow-core fibers or by implementing Optical Parametric Chirped Pulse Amplification (OPCPA) techniques. Recently, when long wavelength driving was combined with polarization gating, isolated soft x-rays in the water window (280-530 eV) were generated in our laboratory. The number of x-ray photons in the 120-400 eV range is comparable to that generated with Ti:Sapphire lasers in the 50 to 150 eV range. The yield of harmonic generation depends strongly on the ellipticity of the driving fields, which is the foundation of polarization gating. When the width of the gate was set to less than one half of the laser cycle, a soft x-ray supercontinuum was generated. The intensity of the gated x-ray spectrum is sensitive to the carrier-envelope phase of the driving laser, which indicates that single isolated attosecond pulses were generated. The ultrabroadband isolated x-ray pulses with 53 as duration were characterized by attosecond streaking measurements. This work has been supported by the DARPA PULSE program (W31P4Q1310017); the Army Research Office (W911NF-14-1-0383, W911NF-15-1- 0336); the Air Force Office of Scientific Research (FA9550-15-1-0037, FA9550-16-1-0149), and NSF 1506345.

Extension of FRI for modeling of electrocardiogram signals.

PubMed

Quick, R Frank; Crochiere, Ronald E; Hong, John H; Hormati, Ali; Baechler, Gilles

2012-01-01

Recent work has developed a modeling method applicable to certain types of signals having a "finite rate of innovation" (FRI). Such signals contain a sparse collection of time- or frequency-limited pulses having a restricted set of allowable pulse shapes. A limitation of past work on FRI is that all of the pulses must have the same shape. Many real signals, including electrocardiograms, consist of pulses with varying widths and asymmetry, and therefore are not well fit by the past FRI methods. We present an extension of FRI allowing pulses having variable pulse width (VPW) and asymmetry. We show example results for electrocardiograms and discuss the possibility of application to signal compression and diagnostics.

Generation of single attosecond pulse within one atomic unit by using multi-cycle inhomogeneous polarization gating technology in bowtie-shaped nanostructure

NASA Astrophysics Data System (ADS)

Feng, Liqiang; Liu, Hang

2018-04-01

The generations of high-order harmonic spectra and single attosecond pulses (SAPs) driven by the multi-cycle inhomogeneous polarization gating (PG) technology in the bowtie-shaped nanostructure have been theoretically investigated. It is found that by setting the bowtie-shaped nanostructure along the driven laser polarization direction, not only the extension of the harmonic cutoff can be achieved, caused by the surface plasmon polaritons, but also the modulations of the harmonics can be decreased, caused by the PG technology and the inhomogeneous effect. As a result, the contribution of the harmonic plateau is only from one harmonic emission peak with the dominant short quantum path. Further, by properly adding a half-cycle pulse into the driven laser field, the harmonic emission process can be precisely controlled in the half-cycle duration and a supercontinuum with the bandwidth of 263 eV can be obtained. Finally, by directly superposing the harmonics from this supercontinuum, a SAP with the full width at half maximum of 23 as can be obtained, which is shorter than one atomic unit.

Enhanced ν-optical time domain reflectometry using gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector

NASA Astrophysics Data System (ADS)

Zhang, Xuping; Shi, Yuanlei; Shan, Yuanyuan; Sun, Zhenhong; Qiao, Weiyan; Zhang, Yixin

2016-09-01

Optical time domain reflectometry (OTDR) is one of the most successful diagnostic tools for nondestructive attenuation measurement of a fiber link. To achieve better sensitivity, spatial resolution, and avoid dead-zone in conversional OTDR, a single-photon detector has been introduced to form the photon-counting OTDR (ν-OTDR). We have proposed a ν-OTDR system using a gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector (SPAD). Benefiting from the superior performance of a sinusoidal gated SPAD on dark count probability, gating frequency, and gate duration, our ν-OTDR system has achieved a dynamic range (DR) of 33.4 dB with 1 μs probe pulse width after an equivalent measurement time of 51 s. This obtainable DR corresponds to a sensing length over 150 km. Our system has also obtained a spatial resolution of 5 cm at the end of a 5-km standard single-mode fiber. By employing a sinusoidal gating technique, we have improved the ν-OTDR spatial resolution and significantly reduced the measurement time.

Towards higher stability of resonant absorption measurements in pulsed plasmas.

PubMed

Britun, Nikolay; Michiels, Matthieu; Snyders, Rony

2015-12-01

Possible ways to increase the reliability of time-resolved particle density measurements in pulsed gaseous discharges using resonant absorption spectroscopy are proposed. A special synchronization, called "dynamic source triggering," between a gated detector and two pulsed discharges, one representing the discharge of interest and another being used as a reference source, is developed. An internal digital delay generator in the intensified charge coupled device camera, used at the same time as a detector, is utilized for this purpose. According to the proposed scheme, the light pulses from the reference source follow the gates of detector, passing through the discharge of interest only when necessary. This allows for the utilization of short-pulse plasmas as reference sources, which is critical for time-resolved absorption analysis of strongly emitting pulsed discharges. In addition to dynamic source triggering, the reliability of absorption measurements can be further increased using simultaneous detection of spectra relevant for absorption method, which is also demonstrated in this work. The proposed methods are illustrated by the time-resolved measurements of the metal atom density in a high-power impulse magnetron sputtering (HiPIMS) discharge, using either a hollow cathode lamp or another HiPIMS discharge as a pulsed reference source.

Analogue saturation limit of single and double 10 mm microchannel plate photomultiplier tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milnes, J. S., E-mail: james.milnes@photek.co.uk; Conneely, T. M.; Horsfield, C. J.

Photek are a well-established supplier of microchannel plate (MCP) photomultiplier tubes (PMTs) to the inertial confinement fusion community. The analogue signals produced at the major inertial confinement fusion facilities cover many orders of magnitude, therefore understanding the upper saturation limit of MCP-PMTs to large low rate signals takes on a high importance. Here we present a study of a single and a double MCP-PMT with 10 mm diameter active area. The saturation was studied for a range of optical pulse widths from 4 ns to 100 ns and at a range of electron gain values: 10{sup 3} to 10{sup 4}more » for the single and 10{sup 4} to 10{sup 6} for the double. We have shown that the saturation level of ∼1.2 nC depends only on the integrated charge of the pulse and is independent of pulse width and gain over this range, but that the level of charge available in deep saturation is proportional to the operating gain.« less

Silicon based quantum dot hybrid qubits

NASA Astrophysics Data System (ADS)

Kim, Dohun

2015-03-01

The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron's charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a `hybrid' qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the `sweet spot' for charge qubit operation. Along with fast (>GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes. This work was supported in part by ARO (W911NF-12-0607), NSF (PHY-1104660), DOE (DE-FG02-03ER46028), and by the Laboratory Directed Research and Development program at Sandia National Laboratories under contract DE-AC04-94AL85000.

Nanocrystal floating gate memory with solution-processed indium-zinc-tin-oxide channel and colloidal silver nanocrystals

NASA Astrophysics Data System (ADS)

Hu, Quanli; Ha, Sang-Hyub; Lee, Hyun Ho; Yoon, Tae-Sik

2011-12-01

A nanocrystal (NC) floating gate memory with solution-processed indium-zinc-tin-oxide (IZTO) channel and silver (Ag) NCs embedded in thin gate dielectric layer (SiO2(30 nm)/Al2O3(3 nm)) was fabricated. Both the IZTO channel and colloidal Ag NC layers were prepared by spin-coating and subsequent annealing, and dip-coating process, respectively. A threshold voltage shift up to ~0.9 V, corresponding to the electron density of 6.5 × 1011 cm-2, at gate pulsing <=10 V was achieved by the charging of high density NCs. These results present the successful non-volatile memory characteristics of an oxide-semiconductor transistor fabricated through solution processes.

Modulation of BK channel voltage gating by different auxiliary β subunits

PubMed Central

Contreras, Gustavo F.; Neely, Alan; Alvarez, Osvaldo; Gonzalez, Carlos; Latorre, Ramon

2012-01-01

Calcium- and voltage-activated potassium channels (BK) are regulated by a multiplicity of signals. The prevailing view is that different BK gating mechanisms converge to determine channel opening and that these gating mechanisms are allosterically coupled. In most instances the pore forming α subunit of BK is associated with one of four alternative β subunits that appear to target specific gating mechanisms to regulate the channel activity. In particular, β1 stabilizes the active configuration of the BK voltage sensor having a large effect on BK Ca2+ sensitivity. To determine the extent to which β subunits regulate the BK voltage sensor, we measured gating currents induced by the pore-forming BK α subunit alone and with the different β subunits expressed in Xenopus oocytes (β1, β2IR, β3b, and β4). We found that β1, β2, and β4 stabilize the BK voltage sensor in the active conformation. β3 has no effect on voltage sensor equilibrium. In addition, β4 decreases the apparent number of charges per voltage sensor. The decrease in the charge associated with the voltage sensor in α β4 channels explains most of their biophysical properties. For channels composed of the α subunit alone, gating charge increases slowly with pulse duration as expected if a significant fraction of this charge develops with a time course comparable to that of K+ current activation. In the presence of β1, β2, and β4 this slow component develops in advance of and much more rapidly than ion current activation, suggesting that BK channel opening proceeds in two steps. PMID:23112204

High-rep-rate Thomson scattering for LHD

NASA Astrophysics Data System (ADS)

den Hartog, D. J.; Borchardt, M. T.; Holly, D. J.; Schmitz, O.; Yasuhara, R.; Yamada, I.; Funaba, H.; Osakabe, M.; Morisaki, T.

2017-10-01

A high-rep-rate pulse-burst laser system is being built for the LHD Thomson scattering (TS) diagnostic. This laser will have two operating scenarios, a fast-burst sequence of 15 kHz rep rate for at least 15 ms, and a slow-burst sequence of 1 kHz for at least 50 ms. There will be substantial flexibility in burst sequences for tailoring to experimental requirements. This new laser system will operate alongside the existing lasers in the LHD TS diagnostic, and will use the same beamline. This increase in temporal resolution capability complements the high spatial resolution (144 points) of the LHD TS diagnostic, providing unique measurement capability unmatched on any other fusion experiment. The new pulse-burst laser is a straightforward application of technology developed at UW-Madison, consisting of a Nd:YAG laser head with modular flashlamp drive units and a customized control system. Variable pulse-width drive of the flashlamps is accomplished by IGBT (insulated gate bipolar transistor) switching of electrolytic capacitor banks. Direct control of the laser Pockels cell drive enables optimal pulse energy extraction, producing >1.5 J q-switched pulses with 20 ns FWHM. Burst operation of this laser system will be used to capture fast time evolution of the electron temperature and density profiles during events such as ELMs, RMP perturbations, and various MHD modes. This work is supported by the U. S. Department of Energy and the National Institute for Fusion Science (Japan).

A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element

NASA Astrophysics Data System (ADS)

Wang, Han; Gou, Chao; Luo, Kai

2017-04-01

This paper presents a fully on-chip NMOS low-dropout regulator (LDO) for portable applications with quasi floating gate pass element and fast transient response. The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump, which allows the charge pump to be a small economical circuit with small silicon area. In addition, a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and {I}{{Q}} of 395 μA. Under full-range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV, respectively.

A television scanner for the ultracentrifuge. II. Multiple cell operation.

PubMed

Rockholt, D L; Royce, C R; Richards, E G

1976-07-01

The "Optical Multichannel Analyzer" (OMA) is a commercially available instrument that with the absorption optical system of the ultracentrifuge, provides an entire 500 channel intensity profile of a cell in real time. With its own analog-todigital converter, the OMA integrates a selectable number of 32.8 msec scans to provide a time-averaged image in digital form. This paper describes an interface-controller for operation of the OMA with single- and double-sector cells in multi-cell rotors, simulating double-beam measurement required for absorbance determinations. The desired sector is selected by "gating" the intensifier stage of a "Silicon Intensified Target" vidicon (SIT) used as the light detector. The cell location in the rotor and the position of the gate relative to the cell centerline is obtained from a phase-locked loop circuit which divides each rotation of the rotor into 3600 parts independent of rotor speed. (This circuit employed with photo-multiplier scanners would select the gate position for integration of photomultiplier pulses.) From examination of appropriate signals with an oscilloscope, it was verified that gate positions and widths are located with an accuracy of 0.1degree or better and with a precision of +/- 0.1 mus. The light intensity profile for any desired cell can be examined in "real time", even during acceleration of the rotor. Additional circuits employing a 10 MHz crystal clock 1) control the automatic collection of data for all sectors in multicell rotors at digitally selected time intervals, 2) display the rotor speed, and 3) indicate the elapsed time of the experiment. Constructed but not tested are additional circuits for pulsing a laser into the absorption or Rayleigh optical system. The accuracy of the pulsed SIT has been demonstrated by measurement of absorbances of solutions and also by sedimentation equilibrium experiments with myoglobin. The estimated error is 0.003 for absorbances ranging from 0 to 1. The interface-controller operates extremely well, but problems related to the pulsed SIT (optimum gate position relative to the sector opening shape of high-voltage pulse, slight pincushion distortion) require more work.

Speed of response in ultrabrief and brief pulse width right unilateral ECT.

PubMed

Loo, Colleen K; Garfield, Joshua B B; Katalinic, Natalie; Schweitzer, Isaac; Hadzi-Pavlovic, Dusan

2013-05-01

Ultrabrief pulse width stimulation electroconvulsive therapy (ECT) results in less cognitive side-effects than brief pulse ECT, but recent work suggests that more treatment sessions may be required to achieve similar efficacy. In this retrospective analysis of subjects pooled from three research studies, time to improvement was analysed in 150 depressed subjects who received right unilateral ECT with a brief pulse width (at five times seizure threshold) or ultrabrief pulse width (at six times seizure threshold). Multivariate Cox regression analyses compared the number of treatments required for 50% reduction in depression scores (i.e. speed of response) in these two samples. The analyses controlled for clinical, demographic and treatment variables that differed between the samples or that were found to be significant predictors of speed of response in univariate analyses. In the multivariate analysis, older age predicted faster speed of response. There was a non-significant trend for faster time to 50% improvement with brief pulse ECT (p = 0.067). Remission rates were higher after brief pulse ECT than ultrabrief pulse ECT (p = 0.007) but response rates were similar. This study, the largest of its kind reported to date, suggests that fewer treatments may be needed to attain response with brief than ultrabrief pulse ECT and that remission rates are higher with brief pulse ECT. Further research with a larger randomized and blinded study is recommended.

Ultrafast gating of a mid-infrared laser pulse by a sub-pC relativistic electron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cesar, D. B.; Musumeci, P.; Alesini, D.

In this paper we discuss a relative time-of-arrival measurement scheme between an electron beam and a mid-infrared laser pulse based on the electron-beam controlled transmission in semiconductor materials. This technique can be used as a time-stamping diagnostic in ultrafast electron diffraction or microscopy. In particular, our characterization of Germanium demonstrates that sub-ps time-of-arrival sensitivity could be achieved in a single shot and with very low charge beams (<1 pC). Detailed measurements as a function of the beam charge and the laser wavelength offer insights on the free carrier dynamics in the semiconductor upon excitation by the electron beam.

Generation of stable subfemtosecond hard x-ray pulses with optimized nonlinear bunch compression

DOE PAGES

Huang, Senlin; Ding, Yuantao; Huang, Zhirong; ...

2014-12-15

In this paper, we propose a simple scheme that leverages existing x-ray free-electron laser hardware to produce stable single-spike, subfemtosecond x-ray pulses. By optimizing a high-harmonic radio-frequency linearizer to achieve nonlinear compression of a low-charge (20 pC) electron beam, we obtain a sharp current profile possessing a few-femtosecond full width at half maximum temporal duration. A reverse undulator taper is applied to enable lasing only within the current spike, where longitudinal space charge forces induce an electron beam time-energy chirp. Simulations based on the Linac Coherent Light Source parameters show that stable single-spike x-ray pulses with a duration less thanmore » 200 attoseconds can be obtained.« less

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Efficient extreme ultraviolet plasma source generated by a CO2 laser and a liquid xenon microjet target

NASA Astrophysics Data System (ADS)

Ueno, Yoshifumi; Ariga, Tatsuya; Soumagne, George; Higashiguchi, Takeshi; Kubodera, Shoichi; Pogorelsky, Igor; Pavlishin, Igor; Stolyarov, Daniil; Babzien, Marcus; Kusche, Karl; Yakimenko, Vitaly

2007-05-01

We demonstrated efficacy of a CO2-laser-produced xenon plasma in the extreme ultraviolet (EUV) spectral region at 13.5nm at variable laser pulse widths between 200ps and 25ns. The plasma target was a 30μm liquid xenon microjet. To ensure the optimum coupling of CO2 laser energy with the plasma, they applied a prepulse yttrium aluminum garnet laser. The authors measured the conversion efficiency (CE) of the 13.5nm EUV emission for different pulse widths of the CO2 laser. A maximum CE of 0.6% was obtained for a CO2 laser pulse width of 25ns at an intensity of 5×1010W/cm2.

Geometric dependence of the parasitic components and thermal properties of HEMTs

NASA Astrophysics Data System (ADS)

Vun, Peter V.; Parker, Anthony E.; Mahon, Simon J.; Fattorini, Anthony

2007-12-01

For integrated circuit design up to 50GHz and beyond accurate models of the transistor access structures and intrinsic structures are necessary for prediction of circuit performance. The circuit design process relies on optimising transistor geometry parameters such as unit gate width, number of gates, number of vias and gate-to-gate spacing. So the relationship between electrical and thermal parasitic components in transistor access structures, and transistor geometry is important to understand when developing models for transistors of differing geometries. Current approaches to describing the geometric dependence of models are limited to empirical methods which only describe a finite set of geometries and only include unit gate width and number of gates as variables. A better understanding of the geometric dependence is seen as a way to provide scalable models that remain accurate for continuous variation of all geometric parameters. Understanding the distribution of parasitic elements between the manifold, the terminal fingers, and the reference plane discontinuities is an issue identified as important in this regard. Examination of dc characteristics and thermal images indicates that gate-to-gate thermal coupling and increased thermal conductance at the gate ends, affects the device total thermal conductance. Consequently, a distributed thermal model is proposed which accounts for these effects. This work is seen as a starting point for developing comprehensive scalable models that will allow RF circuit designers to optimise circuit performance parameters such as total die area, maximum output power, power-added-efficiency (PAE) and channel temperature/lifetime.

Effects of plasma-induced charging damage on random telegraph noise in metal-oxide-semiconductor field-effect transistors with SiO2 and high-k gate dielectrics

NASA Astrophysics Data System (ADS)

Kamei, Masayuki; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2014-01-01

We clarified in this study how plasma-induced charging damage (PCD) affects the so-called “random telegraph noise (RTN)” — a principal concern in designing ultimately scaled large-scale integrated circuits (LSIs). Metal-oxide-semiconductor field-effect transistors (MOSFETs) with SiO2 and high-k gate dielectric were exposed to an inductively coupled plasma (ICP) with Ar gas. Drain current vs gate voltage (Ids-Vg) characteristics were obtained before and after the ICP plasma exposure for the same device. Then, the time evolution of Ids fluctuation defined as Ids/μIds was measured, where μIds is the mean Ids. This value corresponds to an RTN feature, and RTN was obtained under various gate voltages (Vg) by a customized measurement technique. We focused on the statistical distribution width of (Ids/μIds), δ(Ids/μIds), in order to clarify the effects of PCD on RTN. δ(Ids/μIds) was increased by PCD for both MOSFETs with the SiO2 and high-k gate dielectrics, suggesting that RTN can be used as a measure of PCD, i.e., a distribution width increase directly indicates the presence of PCD. The dependence of δ(Ids/μIds) on the overdrive voltage Vg-Vth, where Vth is the threshold voltage, was investigated by the present technique. It was confirmed that δ(Ids/μIds) increased with a decrease in the overdrive voltage for MOSFETs with the SiO2 and high-k gate dielectrics. The presence of created carrier trap sites with PCD was characterized by the time constants for carrier capture and emission. The threshold voltage shift (ΔVth) induced by PCD was also evaluated and compared with the RTN change, to correlate the RTN increase with ΔVth induced by PCD. Although the estimated time constants exhibited complex behaviors due to the nature of trap sites created by PCD, δ(Ids/μIds) showed a straightforward tendency in accordance with the amount of PCD. These findings provide an in-depth understanding of plasma-induced RTN characteristic changes in future MOSFETs.

Nanocomposite Gate Dielectrics With Nanoparticles for Organic Thin Film Transistors

DTIC Science & Technology

2006-09-15

gives rise to the larger transport activation energy and trap distribution width in pentacene TFTs, leading to a decrease of carrier mobility. On the...voltage, carrier mobility of pentacene TFTs increase. These phenomena can be explained by multiple trapping and release model. Therefore, a possible...the low charge carrier mobility of organic semiconductors. Hence, for the applications that require high current output, such as switching of organic

Universal holonomic single quantum gates over a geometric spin with phase-modulated polarized light.

PubMed

Ishida, Naoki; Nakamura, Takaaki; Tanaka, Touta; Mishima, Shota; Kano, Hiroki; Kuroiwa, Ryota; Sekiguchi, Yuhei; Kosaka, Hideo

2018-05-15

We demonstrate universal non-adiabatic non-abelian holonomic single quantum gates over a geometric electron spin with phase-modulated polarized light and 93% average fidelity. This allows purely geometric rotation around an arbitrary axis by any angle defined by light polarization and phase using a degenerate three-level Λ-type system in a negatively charged nitrogen-vacancy center in diamond. Since the control light is completely resonant to the ancillary excited state, the demonstrated holonomic gate not only is fast with low power, but also is precise without the dynamical phase being subject to control error and environmental noise. It thus allows pulse shaping for further fidelity.

A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric

NASA Astrophysics Data System (ADS)

Soni, Deepak; Sharma, Dheeraj; Aslam, Mohd.; Yadav, Shivendra

2018-04-01

This article presents a new device configuration to enhance current drivability and suppress negative conduction (ambipolar conduction) with improved RF characteristics of physically doped TFET. Here, we used a new approach to get excellent electrical characteristics of hetero-dielectric short gate source electrode TFET (HD-SG SE-TFET) by depositing a metal electrode of 5.93 eV work function over the heavily doped source (P+) region. Deposition of metal electrode induces the plasma (thin layer) of holes under the Si/HfO2 interface due to work function difference of metal and semiconductor. Plasma layer of holes is advantageous to increase abruptness as well as decrease the tunneling barrier at source/channel junction for attaining higher tunneling rate of charge carriers (i.e., electrons), which turns into 86.66 times higher ON-state current compared with the conventional physically doped TFET (C-TFET). Along with metal electrode deposition, gate electrode is under-lapped for inducing asymmetrical concentration of charge carriers in the channel region, which is helpful for widening the tunneling barrier width at the drain/channel interface. Consequently, HD-SG SE-TFET shows suppression of ambipolar behavior with reduction in gate-to-drain capacitance which is beneficial for improvement in RF performance. Furthermore, the effectiveness of hetero-gate dielectric concept has been used for improving the RF performance. Furthermore, reliability of C-TFET and proposed structures has been confirmed in term of linearity.

Boolean gates on actin filaments

NASA Astrophysics Data System (ADS)

Siccardi, Stefano; Tuszynski, Jack A.; Adamatzky, Andrew

2016-01-01

Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications.

Graded, Dynamically Routable Information Processing with Synfire-Gated Synfire Chains.

PubMed

Wang, Zhuo; Sornborger, Andrew T; Tao, Louis

2016-06-01

Coherent neural spiking and local field potentials are believed to be signatures of the binding and transfer of information in the brain. Coherent activity has now been measured experimentally in many regions of mammalian cortex. Recently experimental evidence has been presented suggesting that neural information is encoded and transferred in packets, i.e., in stereotypical, correlated spiking patterns of neural activity. Due to their relevance to coherent spiking, synfire chains are one of the main theoretical constructs that have been appealed to in order to describe coherent spiking and information transfer phenomena. However, for some time, it has been known that synchronous activity in feedforward networks asymptotically either approaches an attractor with fixed waveform and amplitude, or fails to propagate. This has limited the classical synfire chain's ability to explain graded neuronal responses. Recently, we have shown that pulse-gated synfire chains are capable of propagating graded information coded in mean population current or firing rate amplitudes. In particular, we showed that it is possible to use one synfire chain to provide gating pulses and a second, pulse-gated synfire chain to propagate graded information. We called these circuits synfire-gated synfire chains (SGSCs). Here, we present SGSCs in which graded information can rapidly cascade through a neural circuit, and show a correspondence between this type of transfer and a mean-field model in which gating pulses overlap in time. We show that SGSCs are robust in the presence of variability in population size, pulse timing and synaptic strength. Finally, we demonstrate the computational capabilities of SGSC-based information coding by implementing a self-contained, spike-based, modular neural circuit that is triggered by streaming input, processes the input, then makes a decision based on the processed information and shuts itself down.

Highly efficient X-range AlGaN/GaN power amplifier

NASA Astrophysics Data System (ADS)

Tural'chuk, P. A.; Kirillov, V. V.; Osipov, P. E.; Vendik, I. B.; Vendik, O. G.; Parnes, M. D.

2017-09-01

The development of microwave power amplifiers (PAs) based on transistors with an AlGaN/GaN heterojunction are discussed in terms of the possible enhancement of their efficiency. The main focus is on the synthesis of the transforming circuits, which ensure the reactive load at the second- and third-harmonic frequencies and complex impedance at the fundamental frequency. This makes it possible to optimize the complex operation mode of a PA; i.e., to reduce the scattering power and enhance the efficiency. A microwave PA based on the Schottky-barrier-gate field-effect transistor with 80 electrodes based on the GaN pHEMT transistor with a gate length of 0.25 nm and a gate width of 125 nm is experimentally investigated. The amplifier has a pulse output power of 35 W and a power-added efficiency of at least 50% at a working frequency of 9 GHz.

Spatiotemporal dynamics of Gaussian laser pulse in a multi ions plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jafari Milani, M. R., E-mail: mrj.milani@gmail.com

Spatiotemporal evolutions of Gaussian laser pulse propagating through a plasma with multiple charged ions are studied, taking into account the ponderomotive nonlinearity. Coupled differential equations for beam width and pulse length parameters are established and numerically solved using paraxial ray approximation. In one-dimensional geometry, effects of laser and plasma parameters such as laser intensity, plasma density, and temperature on the longitudinal pulse compression and the laser intensity distribution are analyzed for plasmas with singly and doubly charged ions. The results demonstrate that self-compression occurs in a laser intensity range with a turning point intensity in which the self-compression process hasmore » its strongest extent. The results also show that the multiply ionized ions have different effect on the pulse compression above and below turning point intensity. Finally, three-dimensional geometry is used to analyze the simultaneous evolution of both self-focusing and self-compression of Gaussian laser pulse in such plasmas.« less

Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al 0.3Ga 0.7N/GaN HEMTs

DOE PAGES

Khachatrian, Ani; Roche, Nicolas J. -H.; Buchner, Stephen P.; ...

2016-12-19

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al 0.3Ga 0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTsmore » are attributed to the presence of additional deep traps created when protons lose energy as they collide with the nuclei of constituent atoms. Comparison of electrical parameters measured before and immediately following exposure to the focused x-ray beam showed little change, confirming the absence of significant charge buildup in passivation layers by the x-rays themselves. In conclusion, a major advantage of the pulsed x-ray technique is that the region under the metal gate can be probed for single-event transients from the top side, an approach incompatible with pulsed-laser SEE testing that involves the use of visible light.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatrian, Ani; Roche, Nicolas J. -H.; Buchner, Stephen P.

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al 0.3Ga 0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTsmore » are attributed to the presence of additional deep traps created when protons lose energy as they collide with the nuclei of constituent atoms. Comparison of electrical parameters measured before and immediately following exposure to the focused x-ray beam showed little change, confirming the absence of significant charge buildup in passivation layers by the x-rays themselves. In conclusion, a major advantage of the pulsed x-ray technique is that the region under the metal gate can be probed for single-event transients from the top side, an approach incompatible with pulsed-laser SEE testing that involves the use of visible light.« less

Giant Gating Tunability of Optical Refractive Index in Transition Metal Dichalcogenide Monolayers.

PubMed

Yu, Yiling; Yu, Yifei; Huang, Lujun; Peng, Haowei; Xiong, Liwei; Cao, Linyou

2017-06-14

We report that the refractive index of transition metal dichacolgenide (TMDC) monolayers, such as MoS 2 , WS 2 , and WSe 2 , can be substantially tuned by >60% in the imaginary part and >20% in the real part around exciton resonances using complementary metal-oxide-semiconductor (CMOS) compatible electrical gating. This giant tunablility is rooted in the dominance of excitonic effects in the refractive index of the monolayers and the strong susceptibility of the excitons to the influence of injected charge carriers. The tunability mainly results from the effects of injected charge carriers to broaden the spectral width of excitonic interband transitions and to facilitate the interconversion of neutral and charged excitons. The other effects of the injected charge carriers, such as renormalizing bandgap and changing exciton binding energy, only play negligible roles. We also demonstrate that the atomically thin monolayers, when combined with photonic structures, can enable the efficiencies of optical absorption (reflection) tuned from 40% (60%) to 80% (20%) due to the giant tunability of the refractive index. This work may pave the way toward the development of field-effect photonics in which the optical functionality can be controlled with CMOS circuits.

Generation of isolated attosecond pulses with enhancement cavities—a theoretical study

NASA Astrophysics Data System (ADS)

Högner, M.; Tosa, V.; Pupeza, I.

2017-03-01

The generation of extreme-ultraviolet (XUV) isolated attosecond pulses (IAPs) has enabled experimental access to the fastest phenomena in nature observed so far, namely the dynamics of electrons in atoms, molecules and solids. However, nowadays the highest repetition rates at which IAPs can be generated lies in the {kHz} range. This represents a rather severe restriction for numerous experiments involving the detection of charged particles, where the desired number of generated particles per shot is limited by space charge effects to ideally one. Here, we present a theoretical study on the possibility of efficiently producing IAPs at multi-{MHz} repetition rates via cavity-enhanced high-harmonic generation (HHG). To this end, we assume parameters of state-of-the-art Yb-based femtosecond laser technology to evaluate several time-gating methods which could generate IAPs in enhancement cavities. We identify polarization gating and a new method, employing non-collinear optical gating in a tailored transverse cavity mode, as suitable candidates and analyze these via extensive numerical modeling. The latter, which we dub transverse mode gating (TMG) promises the highest efficiency and robustness. Assuming 0.7 μ {{J}}, 5-cycle pulses from the seeding laser and a state-of-the-art enhancement cavity, we show that TMG bares the potential to generate IAPs with photon energies around 100 {eV} and a photon flux of at least {10}8 {photons} {{{s}}}-1 at repetition rates of 10 {MHz} and higher. This result reveals a roadmap towards a dramatic decrease in measurement time (and, equivalently, an increase in the signal-to-noise ratio) in photoelectron spectroscopy and microscopy. In particular, it paves the way to combining attosecond streaking with photoelectron emission microscopy, affording, for the first time, the spatially and temporally resolved observation of plasmonic fields in nanostructures. Furthermore, it promises the generation of frequency combs with an unprecedented bandwidth for XUV precision spectroscopy.

A laser-Compton scattering prototype experiment at 100 MeV linac of Shanghai Institute of Applied Physics.

PubMed

Luo, W; Xu, W; Pan, Q Y; Cai, X Z; Chen, J G; Chen, Y Z; Fan, G T; Fan, G W; Guo, W; Li, Y J; Liu, W H; Lin, G Q; Ma, Y G; Shen, W Q; Shi, X C; Xu, B J; Xu, J Q; Xu, Y; Zhang, H O; Yan, Z; Yang, L F; Zhao, M H

2010-01-01

As a prototype of the Shanghai Laser Electron Gamma Source in the Shanghai Synchrotron Radiation Facility, an x-ray source based on laser-Compton scattering (LCS) has been installed at the terminal of the 100 MeV linac of the Shanghai Institute of Applied Physics. LCS x-rays are generated by interactions between Q-switched Nd:yttrium aluminum garnet laser pulses [with wavelength of 1064 nm and pulse width of 21 ns (full width at half maximum)] and electron bunches [with energy of 108 MeV and pulse width of 0.95 ns (rms)] at an angle of 42 degrees between laser and electron beam. In order to measure the energy spectrum of LCS x-rays, a Si(Li) detector along the electron beam line axis is positioned at 9.8 m away from a LCS chamber. After background subtraction, the LCS x-ray spectrum with the peak energy of 29.1+/-4.4|(stat)+/-2.1|(syst) keV and the peak width (rms) of 7.8+/-2.8|(stat)+/-0.4|(syst) keV is observed. Normally the 100 MeV linac operates with the electron macropulse charge of 1.0 nC/pulse, and the electron and laser collision repetition rate of 20 Hz. Therefore, the total LCS x-ray flux of (5.2+/-2.0) x 10(2) Hz can be achieved.

Cardiac gating with a pulse oximeter for dual-energy imaging

NASA Astrophysics Data System (ADS)

Shkumat, N. A.; Siewerdsen, J. H.; Dhanantwari, A. C.; Williams, D. B.; Paul, N. S.; Yorkston, J.; Van Metter, R.

2008-11-01

The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, timp, required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HRthresh. For rates at or below HRthresh, sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [timp(HR) = 0]. Above HRthresh, a characteristic timp(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating. Six observers independently measured the artifact in 111 patient DE images. The data indicate that successful diastolic gating results in a statistically significant reduction (p < 0.001) in the magnitude of cardiac motion artifact, with residual artifact attributed primarily to gross patient motion.

Variability of electromagnetic signatures of lightning initiation observed in the West Mediterranean basin

NASA Astrophysics Data System (ADS)

Kolmasova, I.; Santolik, O.; Defer, E.; Stéphane, P.; Lan, R.; Uhlir, L.; Coquillat, S.; Lambert, D.; Pinty, J. P.; Prieur, S.

2016-12-01

Lightning discharges to ground often exhibit millisecond-scale surges in the continuing currents following return strokes, called M-components. Relatively little is known regarding the source of M-component charge and the mechanisms by which that charge is transferred to ground. In this work, we seek to directly address these questions by presenting correlated high-speed video and Lightning Mapping Array (LMA) observations of a bi-directional leader that resulted in an M-component occurring in a rocket-and-wire triggered lightning flash. The observed leader initiated in the decayed remnants of a positive leader channel that had traversed virgin air approximately 90 msec prior. Three-dimensional locations and speeds of the photographed bi-directional leader and M-component processes are calculated by mapping video images to the observed LMA channel geometry. Both ends of the bi-directional leader exhibited speeds on the order of 2 x106 m sec-1 over 570 meters of the visible channel. Propagation of the luminosity wave from the in-cloud leader to ground ( 8.8 km channel length) exhibited appreciable dispersion, with rise-times (10-90%) increasing from 330 to 410 μsec and pulse-widths (half-maximum) increasing from 380 to 810 μsec - the M-component current pulse measured at ground-level exhibited a rise-time of 290 μsec and a pulse-width of 770 μsec. Group velocities of the luminosity wave have been calculated as a function of frequency, increasing from 2 x107 to 6 x107 m sec-1 over the dominant signal bandwidth (DC to 2 kHz). Additionally, multiple waves of luminosity are observed within the in-cloud channel, indicating nuanced wave phenomena possibly associated with reflection from the end of the leader channel and attachment with the main lightning channel carrying continuing current to ground.

Dynamic NBTI effects in HfSiON.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Devine, Roderick A. B.; Kambour, Kenneth E.; Hjalmarson, Harold Paul

2010-12-01

Negative bias temperature instability is an issue of critical importance as the space electronics industry evolves because it may dominate the reliability lifetime. Understanding its physical origin is therefore essential in determining how best to search for methods of mitigation. It has been suggested that the magnitude of the effect is strongly dependent on circuit operation conditions (static or dynamic modes). In the present work, we examine the time constants related to the charging and recovery of trapped charged induced by NBTI in HfSiON gate dielectric devices. In previous work, we avoided the issue of charge relaxation during acquisition ofmore » the I{sub ds}(V{sub gs}) curve by invoking a continuous stressing technique whereby {Delta}V{sub th} was extracted from a series of single point I{sub ds} measurements. This method relied heavily on determination of the initial value of the source-drain current (I{sub ds}{sup o}) prior to application of gate-source stress. In the present work we have used a new pulsed measurement system (Keithley SCS 4200-PIV) which not only removes this uncertainty but also permits dynamic measurements in which devices are AC stressed (Fig. 1a) or subjected to cycles of continued DC stresses followed by relaxation (Fig. 1b). We can now examine the charging and recovery characteristics of NBTI with higher precision than previously possible. We have performed NBTI stress experiments at room temperature on p-channel MOSFETs made with HfSiON gate dielectrics. In all cases the devices were stressed in the linear regime with V{sub ds}=-0.1V. We have defined two separate waveforms/pulse trains as illustrated in Fig 1. These were applied to the gate of the MOSFET. Firstly we examined the charging characteristics by applying an AC stress at 2.5MHz or 10Hz for different times. For a 50% duty cycle this corresponded to V{sub gs} = - 2V pulses for 200ns or 500ms followed by V{sub gs} = 0V pulses for 200ns or 500ms recovery respectively. In between 'bursts' of AC stress cycles, the I{sub ds}(V{sub gs}) characteristic in the range (-0.6V, -1.3V) was measured in 10.2 {micro}s. V{sub th} was extracted directly from this curve, or from a single I{sub ds} point normalized to the initial I{sub ds}{sup o} using our previous method. The resulting I{sub ds}/I{sub ds}{sup o} curves are compared; in Fig 2, the continuous stress results are included. In the second method, we examined the recovery dynamic by holding V{sub gs} = 0V for a finite amount of time (range 100 ns to 100 ms) following stress at V{sub gs} = - 2V for various times. In Fig 3 we compare |{Delta}V{sub th}(t)| results for recovery times of 100ms, 1ms, 100{micro}s, 50{micro}s, 25{micro}s, 10{micro}s, 100ns, and DC (i.e. no recovery) The data in Fig 2 shows that with a high frequency stress (2.5MHz) devices undergo significantly less (but finite) current degradation than devices stressed at 10Hz. This appears to be limited by charging and not by recovery. Fig 3 supports this hypothesis since for 100ns recovery periods, only a small percentage of the trapped charge relaxes. Detailed explanation of these experiments will be presented at the conference.« less

A pulsed load model and its impact on a synchronous-rectifier system

NASA Astrophysics Data System (ADS)

Hou, Pengfei; Xu, Ye; Li, Jianke; Wang, Jinquan; Zhang, Haitao; Yan, Jun; Wang, Chunming; Chen, Jingjing

2017-02-01

The pulsed load has become a developing trend of power loading. Unlike traditional loads, pulsed loads with current abrupt and repeated charges will result in unstable Microgrid operations because of their small capacity and inertia. In this paper, an Average Magnitude Sum Function (AMSF) is proposed to calculate the frequency of the grid, and based on AMSF, the Relative Deviation Rate (RDR) that characterises the impact of pulsed load on the AC side of the grid is defined and its calculation process is described in detail. In addition, the system dynamic characteristics under a pulsed load are analysed using an Insulated Gate Bipolar Transistor (IGBT) to control the on/off state of the resistive load for simulating a pulsed load. Finally, the transient characteristics of a synchronous-rectifier system with a pulsed load are studied and validated experimentally.

A digital boxcar integrator for IMS spectra

NASA Technical Reports Server (NTRS)

Cohen, Martin J.; Stimac, Robert M.; Wernlund, Roger F.; Parker, Donald C.

1995-01-01

When trying to detect or quantify a signal at or near the limit of detectability, it is invariably embeded in the noise. This statement is true for nearly all detectors of any physical phenomena and the limit of detectability, hopefully, occurs at very low signal-to-noise levels. This is particularly true of IMS (Ion Mobility Spectrometers) spectra due to the low vapor pressure of several chemical compounds of great interest and the small currents associated with the ionic detection process. Gated Integrators and Boxcar Integrators or Averagers are designed to recover fast, repetitive analog signals. In a typical application, a time 'Gate' or 'Window' is generated, characterized by a set delay from a trigger or gate pulse and a certain width. A Gated Integrator amplifies and integrates the signal that is present during the time the gate is open, ignoring noise and interference that may be present at other times. Boxcar Integration refers to the practice of averaging the output of the Gated Integrator over many sweeps of the detector. Since any signal present during the gate will add linearly, while noise will add in a 'random walk' fashion as the square root of the number of sweeps, averaging N sweeps will improve the 'Signal-to-Noise Ratio' by a factor of the square root of N.

Shaping charge excitations in chiral edge states with a time-dependent gate voltage

NASA Astrophysics Data System (ADS)

Misiorny, Maciej; Fève, Gwendal; Splettstoesser, Janine

2018-02-01

We study a coherent conductor supporting a single edge channel in which alternating current pulses are created by local time-dependent gating and sent on a beam-splitter realized by a quantum point contact. The current response to the gate voltage in this setup is intrinsically linear. Based on a fully self-consistent treatment employing a Floquet scattering theory, we analyze the effect of different voltage shapes and frequencies, as well as the role of the gate geometry on the injected signal. In particular, we highlight the impact of frequency-dependent screening on the process of shaping the current signal. The feasibility of creating true single-particle excitations with this method is confirmed by investigating the suppression of excess noise, which is otherwise created by additional electron-hole pair excitations in the current signal.

Development of channel organization and roughness following sediment pulses in single‐thread, gravel bed rivers

USGS Publications Warehouse

Madej, Mary Ann

2001-01-01

Large, episodic inputs of coarse sediment (sediment pulses) in forested, mountain streams may result in changes in the size and arrangement of bed forms and in channel roughness. A conceptual model of channel organization delineates trajectories of response to sediment pulses for many types of gravel bed channels. Channels exhibited self‐organizing behavior to various degrees based on channel gradient, presence of large in‐channel wood or other forcing elements, the size of the sediment pulse, and the number of bed‐mobilizing flows since disturbance. Typical channel changes following a sediment pulse were initial decreases in water depth, in variability of bed elevations, and in the regularity of bed form spacing. Trajectories of change subsequently showed increased average water depth, more variable and complex bed topography, and increased uniformity of bed form spacing. Bed form spacing in streams with abundant forcing elements developed at a shorter spatial scale (two to five channel widths) than in streams without such forcing mechanisms (five to 10 channel widths). Channel roughness increased as bed forms developed.

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, David A.; Miller, Ross A.; Osinsky, Andrei V.; Downey, Brian P.; Storm, David F.; Meyer, David J.; Scott Katzer, D.; Nepal, Neeraj

2016-12-01

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of the same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.

ELECTRIC PULSE GENERATOR

DOEpatents

Buntenbach, R.W.

1959-06-01

S>An electro-optical apparatus is described which produces electric pulses in programmed sequences at times and durations controlled with great accuracy. An oscilloscope CRT is supplied with signals to produce a luminous spot moving in a circle. An opaque mask with slots of variable width transmits light from the spot to a photoelectric transducer. For shorter pulse decay times a CRT screen which emits UV can be used with a UVtransmitting filter and a UV- sensitive photoelectric cell. Pulses are varied by changing masks or by using masks with variable slots. This device may be used in multiple arrangements to produce other pulse aT rangements, or it can be used to trigger an electronic pulse generator. (T.R.H.)

A compact high-voltage pulse generator based on pulse transformer with closed magnetic core.

PubMed

Zhang, Yu; Liu, Jinliang; Cheng, Xinbing; Bai, Guoqiang; Zhang, Hongbo; Feng, Jiahuai; Liang, Bo

2010-03-01

A compact high-voltage nanosecond pulse generator, based on a pulse transformer with a closed magnetic core, is presented in this paper. The pulse generator consists of a miniaturized pulse transformer, a curled parallel strip pulse forming line (PFL), a spark gap, and a matched load. The innovative design is characterized by the compact structure of the transformer and the curled strip PFL. A new structure of transformer windings was designed to keep good insulation and decrease distributed capacitance between turns of windings. A three-copper-strip structure was adopted to avoid asymmetric coupling of the curled strip PFL. When the 31 microF primary capacitor is charged to 2 kV, the pulse transformer can charge the PFL to 165 kV, and the 3.5 ohm matched load can deliver a high-voltage pulse with a duration of 9 ns, amplitude of 84 kV, and rise time of 5.1 ns. When the load is changed to 50 ohms, the output peak voltage of the generator can be 165 kV, the full width at half maximum is 68 ns, and the rise time is 6.5 ns.

Voltage Gating of Shaker K+ Channels

PubMed Central

Rodríguez, Beatriz M.; Sigg, Daniel; Bezanilla, Francisco

1998-01-01

Ionic (Ii) and gating currents (Ig) from noninactivating Shaker H4 K+ channels were recorded with the cut-open oocyte voltage clamp and macropatch techniques. Steady state and kinetic properties were studied in the temperature range 2–22°C. The time course of Ii elicited by large depolarizations consists of an initial delay followed by an exponential rise with two kinetic components. The main Ii component is highly temperature dependent (Q10 > 4) and mildly voltage dependent, having a valence times the fraction of electric field (z) of 0.2–0.3 eo. The Ig On response obtained between −60 and 20 mV consists of a rising phase followed by a decay with fast and slow kinetic components. The main Ig component of decay is highly temperature dependent (Q10 > 4) and has a z between 1.6 and 2.8 eo in the voltage range from −60 to −10 mV, and ∼0.45 eo at more depolarized potentials. After a pulse to 0 mV, a variable recovery period at −50 mV reactivates the gating charge with a high temperature dependence (Q10 > 4). In contrast, the reactivation occurring between −90 and −50 mV has a Q10 = 1.2. Fluctuation analysis of ionic currents reveals that the open probability decreases 20% between 18 and 8°C and the unitary conductance has a low temperature dependence with a Q10 of 1.44. Plots of conductance and gating charge displacement are displaced to the left along the voltage axis when the temperature is decreased. The temperature data suggests that activation consists of a series of early steps with low enthalpic and negative entropic changes, followed by at least one step with high enthalpic and positive entropic changes, leading to final transition to the open state, which has a negative entropic change. PMID:9689029

Multiplexer and time duration measuring circuit

DOEpatents

Gray, Jr., James

1980-01-01

A multiplexer device is provided for multiplexing data in the form of randomly developed, variable width pulses from a plurality of pulse sources to a master storage. The device includes a first multiplexer unit which includes a plurality of input circuits each coupled to one of the pulse sources, with all input circuits being disabled when one input circuit receives an input pulse so that only one input pulse is multiplexed by the multiplexer unit at any one time.

Memory operation mechanism of fullerene-containing polymer memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki

2015-03-09

The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to themore » width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.« less

Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

DOE PAGES

Kim, Dohun; Ward, D. R.; Simmons, C. B.; ...

2015-02-16

An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

NASA Astrophysics Data System (ADS)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Complete pulse characterization of quantum dot mode-locked lasers suitable for optical communication up to 160 Gbit/s.

PubMed

Schmeckebier, H; Fiol, G; Meuer, C; Arsenijević, D; Bimberg, D

2010-02-15

A complete characterization of pulse shape and phase of a 1.3 microm, monolithic-two-section, quantum-dot mode-locked laser (QD-MLL) at a repetition rate of 40 GHz is presented, based on frequency resolved optical gating. We show that the pulse broadening of the QD-MLL is caused by linear chirp for all values of current and voltage investigated here. The chirp increases with the current at the gain section, whereas larger bias at the absorber section leads to less chirp and therefore to shorter pulses. Pulse broadening is observed at very high bias, likely due to the quantum confined stark effect. Passive- and hybrid-QD-MLL pulses are directly compared. Improved pulse intensity profiles are found for hybrid mode locking. Via linear chirp compensation pulse widths down to 700 fs can be achieved independent of current and bias, resulting in a significantly increased overall mode-locking range of 101 MHz. The suitability of QD-MLL chirp compensated pulse combs for optical communication up to 160 Gbit/s using optical-time-division multiplexing are demonstrated by eye diagrams and autocorrelation measurements.

Experimental demonstration of a single-spike hard-X-ray free-electron laser starting from noise

DOE PAGES

Marinelli, A.; MacArthur, J.; Emma, P.; ...

2017-10-09

In this letter, we report the experimental demonstration of single-spike hard-X-ray free-electron laser pulses starting from noise with multi-eV bandwidth. Here, this is accomplished by shaping a low-charge electron beam with a slotted emittance spoiler and by adjusting the transport optics to optimize the beam-shaping accuracy. Based on elementary free-electron laser scaling laws, we estimate the pulse duration to be less than 1 fs full-width at half-maximum.

Experimental demonstration of a single-spike hard-X-ray free-electron laser starting from noise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marinelli, A.; MacArthur, J.; Emma, P.

In this letter, we report the experimental demonstration of single-spike hard-X-ray free-electron laser pulses starting from noise with multi-eV bandwidth. Here, this is accomplished by shaping a low-charge electron beam with a slotted emittance spoiler and by adjusting the transport optics to optimize the beam-shaping accuracy. Based on elementary free-electron laser scaling laws, we estimate the pulse duration to be less than 1 fs full-width at half-maximum.

First two operational years of the electron-beam ion trap charge breeder at the National Superconducting Cyclotron Laboratory

NASA Astrophysics Data System (ADS)

Lapierre, A.; Bollen, G.; Crisp, D.; Krause, S. W.; Linhardt, L. E.; Lund, K.; Nash, S.; Rencsok, R.; Ringle, R.; Schwarz, S.; Steiner, M.; Sumithrarachchi, C.; Summers, T.; Villari, A. C. C.; Williams, S. J.; Zhao, Q.

2018-05-01

The electron-beam ion trap (EBIT) charge breeder of the ReA post-accelerator, located at the National Superconducting Cyclotron Laboratory (Michigan State University), started on-line operation in September 2015. Since then, the EBIT has delivered many pilot beams of stable isotopes and several rare-isotope beams. An operating aspect of the ReA EBIT is the breeding of high charge states to reach high reaccelerated beam energies. Efficiencies in single charge states of more than 20% were measured with K39 15 + , Rb85 27 + , K47 17 + , and Ar34 15 + . Producing high charge states demands long breeding times. This reduces the ejection frequency and, hence, increases the number of ions ejected per pulse. Another operating aspect is the ability to spread the distribution in time of the ejected ion pulses to lower the instantaneous rate delivered to experiments. Pulse widths were stretched from a natural 25 μ s up to ˜70 ms . This publication reviews the progress of the ReA EBIT system over the years and presents the results of charge-breeding efficiency measurements and pulse-stretching tests obtained with stable- and rare-isotope beams. Studies performed with high sensitivity to identify and quantify stable-isotope contaminants from the EBIT are also presented, along with a novel method for purifying beams.

Comparison of implosion core metrics: A 10 ps dilation X-ray imager vs a 100 ps gated microchannel plate [Comparison of implosion core shape observations, 10 ps dilation X-ray imager vs 100 ps gated microchannel plate

DOE PAGES

Nagel, S. R.; Benedetti, L. R.; Bradley, D. K.; ...

2016-08-05

The dilation x-ray imager (DIXI) is a high-speed x-ray framing camera that uses the pulse-dilation technique to achieve a temporal resolution of less than 10 ps. This is a 10× improvement over conventional framing cameras currently employed on the National Ignition Facility (NIF) (100 ps resolution), and otherwise only achievable with 1D streaked imaging. A side effect of the dramatically reduced gate width is the comparatively lower detected signal level. Therefore we implement a Poisson noise reduction with non-local principal component analysis method to improve the robustness of the DIXI data analysis. Furthermore, we present results on ignition-relevant experiments atmore » the NIF using DIXI. In particular we focus on establishing that/when DIXI gives reliable shape metrics (P 0, P 2 and P 4 Legendre modes, and their temporal evolution/swings).« less

Comparison of implosion core metrics: A 10 ps dilation X-ray imager vs a 100 ps gated microchannel plate [Comparison of implosion core shape observations, 10 ps dilation X-ray imager vs 100 ps gated microchannel plate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagel, S. R.; Benedetti, L. R.; Bradley, D. K.

The dilation x-ray imager (DIXI) is a high-speed x-ray framing camera that uses the pulse-dilation technique to achieve a temporal resolution of less than 10 ps. This is a 10× improvement over conventional framing cameras currently employed on the National Ignition Facility (NIF) (100 ps resolution), and otherwise only achievable with 1D streaked imaging. A side effect of the dramatically reduced gate width is the comparatively lower detected signal level. Therefore we implement a Poisson noise reduction with non-local principal component analysis method to improve the robustness of the DIXI data analysis. Furthermore, we present results on ignition-relevant experiments atmore » the NIF using DIXI. In particular we focus on establishing that/when DIXI gives reliable shape metrics (P 0, P 2 and P 4 Legendre modes, and their temporal evolution/swings).« less

SU-E-T-439: Fundamental Verification of Respiratory-Gated Spot Scanning Proton Beam Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamano, H; Yamakawa, T; Hayashi, N

Purpose: The spot-scanning proton beam irradiation with respiratory gating technique provides quite well dose distribution and requires both dosimetric and geometric verification prior to clinical implementation. The purpose of this study is to evaluate the impact of gating irradiation as a fundamental verification. Methods: We evaluated field width, flatness, symmetry, and penumbra in the gated and non-gated proton beams. The respiration motion was distinguished into 3 patterns: 10, 20, and 30 mm. We compared these contents between the gated and non-gated beams. A 200 MeV proton beam from PROBEAT-III unit (Hitachi Co.Ltd) was used in this study. Respiratory gating irradiationmore » was performed by Quasar phantom (MODUS medical devices) with a combination of dedicated respiratory gating system (ANZAI Medical Corporation). For radiochromic film dosimetry, the calibration curve was created with Gafchromic EBT3 film (Ashland) on FilmQA Pro 2014 (Ashland) as film analysis software. Results: The film was calibrated at the middle of spread out Bragg peak in passive proton beam. The field width, flatness and penumbra in non-gated proton irradiation with respiratory motion were larger than those of reference beam without respiratory motion: the maximum errors of the field width, flatness and penumbra in respiratory motion of 30 mm were 1.75% and 40.3% and 39.7%, respectively. The errors of flatness and penumbra in gating beam (motion: 30 mm, gating rate: 25%) were 0.0% and 2.91%, respectively. The results of symmetry in all proton beams with gating technique were within 0.6%. Conclusion: The field width, flatness, symmetry and penumbra were improved with the gating technique in proton beam. The spot scanning proton beam with gating technique is feasible for the motioned target.« less

Magnetic plasma confinement for laser ion source.

PubMed

Okamura, M; Adeyemi, A; Kanesue, T; Tamura, J; Kondo, K; Dabrowski, R

2010-02-01

A laser ion source (LIS) can easily provide a high current beam. However, it has been difficult to obtain a longer beam pulse while keeping a high current. On occasion, longer beam pulses are required by certain applications. For example, more than 10 micros of beam pulse is required for injecting highly charged beams to a large sized synchrotron. To extend beam pulse width, a solenoid field was applied at the drift space of the LIS at Brookhaven National Laboratory. The solenoid field suppressed the diverging angle of the expanding plasma and the beam pulse was widened. Also, it was observed that the plasma state was conserved after passing through a few hundred gauss of the 480 mm length solenoid field.

A 5 kA pulsed power supply for inductive and plasma loads in large volume plasma device.

PubMed

Srivastava, P K; Singh, S K; Sanyasi, A K; Awasthi, L M; Mattoo, S K

2016-07-01

This paper describes 5 kA, 12 ms pulsed power supply for inductive load of Electron Energy Filter (EEF) in large volume plasma device. The power supply is based upon the principle of rapid sourcing of energy from the capacitor bank (2.8 F/200 V) by using a static switch, comprising of ten Insulated Gate Bipolar Transistors (IGBTs). A suitable mechanism is developed to ensure equal sharing of current and uniform power distribution during the operation of these IGBTs. Safe commutation of power to the EEF is ensured by the proper optimization of its components and by the introduction of over voltage protection (>6 kV) using an indigenously designed snubber circuit. Various time sequences relevant to different actions of power supply, viz., pulse width control and repetition rate, are realized through optically isolated computer controlled interface.

A 5 kA pulsed power supply for inductive and plasma loads in large volume plasma device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, P. K., E-mail: pkumar@ipr.res.in; Singh, S. K.; Sanyasi, A. K.

This paper describes 5 kA, 12 ms pulsed power supply for inductive load of Electron Energy Filter (EEF) in large volume plasma device. The power supply is based upon the principle of rapid sourcing of energy from the capacitor bank (2.8 F/200 V) by using a static switch, comprising of ten Insulated Gate Bipolar Transistors (IGBTs). A suitable mechanism is developed to ensure equal sharing of current and uniform power distribution during the operation of these IGBTs. Safe commutation of power to the EEF is ensured by the proper optimization of its components and by the introduction of over voltagemore » protection (>6 kV) using an indigenously designed snubber circuit. Various time sequences relevant to different actions of power supply, viz., pulse width control and repetition rate, are realized through optically isolated computer controlled interface.« less

Integrator Circuitry for Single Channel Radiation Detector

NASA Technical Reports Server (NTRS)

Holland, Samuel D. (Inventor); Delaune, Paul B. (Inventor); Turner, Kathryn M. (Inventor)

2008-01-01

Input circuitry is provided for a high voltage operated radiation detector to receive pulses from the detector having a rise time in the range of from about one nanosecond to about ten nanoseconds. An integrator circuit, which utilizes current feedback, receives the incoming charge from the radiation detector and creates voltage by integrating across a small capacitor. The integrator utilizes an amplifier which closely follows the voltage across the capacitor to produce an integrator output pulse with a peak value which may be used to determine the energy which produced the pulse. The pulse width of the output is stretched to approximately 50 to 300 nanoseconds for use by subsequent circuits which may then use amplifiers with lower slew rates.

Cardiac gating with a pulse oximeter for dual-energy imaging.

PubMed

Shkumat, N A; Siewerdsen, J H; Dhanantwari, A C; Williams, D B; Paul, N S; Yorkston, J; Van Metter, R

2008-11-07

The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, t(imp), required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HR(thresh). For rates at or below HR(thresh), sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [t(imp)(HR) = 0]. Above HR(thresh), a characteristic t(imp)(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating. Six observers independently measured the artifact in 111 patient DE images. The data indicate that successful diastolic gating results in a statistically significant reduction (p < 0.001) in the magnitude of cardiac motion artifact, with residual artifact attributed primarily to gross patient motion.

An LOD with improved breakdown voltage in full-frame CCD devices

NASA Astrophysics Data System (ADS)

Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

2005-02-01

In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harper, Jason; Dobrzynski, Daniel S.

A smart charging system for charging a plug-in electric vehicle (PEV) includes an electric vehicle supply equipment (EVSE) configured to supply electrical power to the PEV through a smart charging module coupled to the EVSE. The smart charging module comprises an electronic circuitry which includes a processor. The electronic circuitry includes electronic components structured to receive electrical power from the EVSE, and supply the electrical power to the PEV. The electronic circuitry is configured to measure a charging parameter of the PEV. The electronic circuitry is further structured to emulate a pulse width modulated signal generated by the EVSE. Themore » smart charging module can also include a first coupler structured to be removably couple to the EVSE and a second coupler structured to be removably coupled to the PEV.« less

Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

DOE PAGES

Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja; ...

2014-11-26

Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm 2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT.more » The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm 2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.« less

Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noh, Joo Hyon; Joshi, Pooran C.; Kuruganti, Teja

Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm 2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT.more » The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm 2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.« less

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

2014-01-01

Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

Development of variable-rate sprayer for nursery liner applications

USDA-ARS?s Scientific Manuscript database

Sensor-guided application technologies are needed to achieve constant spray deposition for the rapid growth of nursery liner trees during a growing season. An experimental real-time variable-rate sprayer that implemented 20 Hz ultrasonic sensors and pulse width modulation (PWM) solenoid valve-contro...

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

PubMed

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Spectroscopic Study of a Pulsed High-Energy Plasma Deflagration Accelerator

NASA Astrophysics Data System (ADS)

Loebner, Keith; Underwood, Thomas; Mouratidis, Theodore; Cappelli, Mark

2015-11-01

Observations of broadened Balmer lines emitted by a highly-ionized transient plasma jet are presented. A gated CCD camera coupled to a high-resolution spectrometer is used to obtain chord-averaged broadening data for a complete cross section of the plasma jet, and the data is Abel inverted to derive the radial plasma density distribution. This measurement is performed over narrow gate widths and at multiple axial positions to provide high spatial and temporal resolution. A streak camera coupled to a spectrometer is used to obtain continuous-time broadening data over the entire duration of the discharge event (10-50 microseconds). Analyses of discharge characteristics and comparisons with previous work are discussed. This work is supported by the U.S. Department of Energy Stewardship Science Academic Program, as well as the National Defense Science Engineering Graduate Fellowship.

Effect of plasma arc welding variables on fusion zone grain size and hardness of AISI 321 austenitic stainless steel

NASA Astrophysics Data System (ADS)

Kondapalli, S. P.

2017-12-01

In the present work, pulsed current microplasma arc welding is carried out on AISI 321 austenitic stainless steel of 0.3 mm thickness. Peak current, Base current, Pulse rate and Pulse width are chosen as the input variables, whereas grain size and hardness are considered as output responses. Response surface method is adopted by using Box-Behnken Design, and in total 27 experiments are performed. Empirical relation between input and output response is developed using statistical software and analysis of variance (ANOVA) at 95% confidence level to check the adequacy. The main effect and interaction effect of input variables on output response are also studied.

Robust integral variable structure controller and pulse-width pulse-frequency modulated input shaper design for flexible spacecraft with mismatched uncertainty/disturbance.

PubMed

Hu, Qinglei

2007-10-01

This paper presents a dual-stage control system design method for the flexible spacecraft attitude maneuvering control by use of on-off thrusters and active vibration control by input shaper. In this design approach, attitude control system and vibration suppression were designed separately using lower order model. As a stepping stone, an integral variable structure controller with the assumption of knowing the upper bounds of the mismatched lumped perturbation has been designed which ensures exponential convergence of attitude angle and angular velocity in the presence of bounded uncertainty/disturbances. To reconstruct estimates of the system states for use in a full information variable structure control law, an asymptotic variable structure observer is also employed. In addition, the thruster output is modulated in pulse-width pulse-frequency so that the output profile is similar to the continuous control histories. For actively suppressing the induced vibration, the input shaping technique is used to modify the existing command so that less vibration will be caused by the command itself, which only requires information about the vibration frequency and damping of the closed-loop system. The rationale behind this hybrid control scheme is that the integral variable structure controller can achieve good precision pointing, even in the presence of uncertainties/disturbances, whereas the shaped input attenuator is applied to actively suppress the undesirable vibrations excited by the rapid maneuvers. Simulation results for the spacecraft model show precise attitude control and vibration suppression.

Controller for a High-Power, Brushless dc Motor

NASA Technical Reports Server (NTRS)

Fleming, David J.; Makdad, Terence A.

1987-01-01

Driving and braking torques controllable. Control circuit operates 7-kW, 45-lb-ft (61-N-m), three-phase, brushless dc motor in both motor and generator modes. In motor modes, energy from power source is pulse-width modulated to motor through modified "H-bridge" circuit, in generator mode, energy from motor is pulse-width modulated into bank of load resistors to provide variable braking torques. Circuit provides high-resolution torque control in both directions over wide range of speeds and torques. Tested successfully at bus voltages up to 200 Vdc and currents up to 45 A.

Raman efficiencies of natural rocks and minerals: performance of a remote Raman system for planetary exploration at a distance of 10 meters.

PubMed

Stopar, Julie D; Lucey, Paul G; Sharma, Shiv K; Misra, Anupam K; Taylor, G Jeffrey; Hubble, Hugh W

2005-08-01

Raman spectroscopy is a powerful technique for materials analysis, and we are developing and analyzing a remote Raman system for use on a planetary lander or rover. We have acquired data at a distance of 10m from a variety of geologic materials using different instrument designs. We have employed a pulsed laser with both an ungated detector and a gated detector. A gated detector can reduce long-lived fluorescence while still collecting all Raman signal. In order to design a flight instrument, we need to quantify how natural surfaces will respond to laser stimulus. We define remote Raman efficiency of natural surfaces as the ratio of radiant exitance leaving a natural surface to the irradiance of the incident laser. The radiant exitance of a natural surface is the product of the sample radiance, the projected solid angle, and the full-width-half-maximum of the Raman signal. We have determined the remote Raman efficiency for a variety of rocks and minerals. The best efficiencies are achieved for large, clear, single crystals that produce the most radiant exitance, while darker fine-grained mineral mixtures produce lower efficiencies. By implementing a pulsed laser, gated detector system we have improved the signal detection and have generally decreased the integration time necessary to detect Raman signal from natural surfaces.

Standoff detection of explosive molecules using nanosecond gated Raman spectroscopy

NASA Astrophysics Data System (ADS)

Chung, Jin Hyuk; Cho, Soo Gyeong

2013-06-01

Recently, improvised explosive device (IED) has been a serious threat for many countries. One of the approaches to alleviate this threat is standoff detection of explosive molecules used in IEDs. Raman spectroscopy is a prospective method among many technologies under research to achieve this goal. It provides unique information of the target materials, through which the ingredients used in IEDs can be analyzed and identified. The main problem of standoff Raman spectroscopic detection is the large background noise hindering weak Raman signals from the target samples. Typical background noise comes from both ambient fluorescent lights indoor and sunlight outdoor whose intensities are usually much larger than that of Raman scattering from the sample. Under the proper condition using pulse laser and ICCD camera with nanosecond pulse width and gating technology, we succeed to separate and remove these background noises from Raman signals. For this experiment, we build an optical system for standoff detection of explosive molecules. We use 532 nm, 10 Hz, Q-switching Nd:YAG laser as light source, and ICCD camera triggered by laser Qswitching time with proper gate delay regarding the flight time of Raman from target materials. Our detection system is successfully applied to detect and identify more than 20 ingredients of IEDs including TNT, RDX, and HMX which are located 10 to 54 meters away from the system.

Efficient Z gates for quantum computing

NASA Astrophysics Data System (ADS)

McKay, David C.; Wood, Christopher J.; Sheldon, Sarah; Chow, Jerry M.; Gambetta, Jay M.

2017-08-01

For superconducting qubits, microwave pulses drive rotations around the Bloch sphere. The phase of these drives can be used to generate zero-duration arbitrary virtual Z gates, which, combined with two Xπ /2 gates, can generate any SU(2) gate. Here we show how to best utilize these virtual Z gates to both improve algorithms and correct pulse errors. We perform randomized benchmarking using a Clifford set of Hadamard and Z gates and show that the error per Clifford is reduced versus a set consisting of standard finite-duration X and Y gates. Z gates can correct unitary rotation errors for weakly anharmonic qubits as an alternative to pulse-shaping techniques such as derivative removal by adiabatic gate (DRAG). We investigate leakage and show that a combination of DRAG pulse shaping to minimize leakage and Z gates to correct rotation errors realizes a 13.3 ns Xπ /2 gate characterized by low error [1.95 (3 ) ×10-4] and low leakage [3.1 (6 ) ×10-6] . Ultimately leakage is limited by the finite temperature of the qubit, but this limit is two orders of magnitude smaller than pulse errors due to decoherence.

Analysis of magnesium and copper in aluminum alloys with high repetition rate laser-ablation spark-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

He, Xiaoyong; Dong, Bo; Chen, Yuqi; Li, Runhua; Wang, Fujuan; Li, Jiaoyang; Cai, Zhigang

2018-03-01

In order to improve the analytical speed and performance of laser-ablation based atomic emission spectroscopy, high repetition rate laser-ablation spark-induced breakdown spectroscopy (HRR LA-SIBS) was first developed. Magnesium and copper in aluminum alloys were analyzed with this technique. In the experiments, the fundamental output of an acousto-optically Q-switched Nd:YAG laser operated at 1 kHz repetition rate with low pulse energy and 120 ns pulse width was used to ablate the samples and the plasma emission was enhanced by spark discharge. The spectra were recorded with a compact fiber spectrometer with non-intensified charge-coupled device in non-gating mode. Different parameters relative with analytical performance, such as capacitance, voltage, laser pulse energy were optimized. Under current experimental conditions, calibration curves of magnesium and copper in aluminum alloys were built and limits of detection of them were determined to be 14.0 and 9.9 ppm by HRR LA-SIBS, respectively, which were 8-12 folds better than that achieved by HRR LA under similar experimental condition without spark discharge. The analytical sensitivities are close to those obtained with conventional LIBS but with improved analytical speed as well as possibility of using compact fiber spectrometer. Under high repetition rate operation, the noise level can be decreased and the analytical reproducibility can be improved obviously by averaging multiple measurements within short time. High repetition rate operation of laser-ablation spark-induced breakdown spectroscopy is very helpful for improving analytical speed. It is possible to find applications in fast elements analysis, especially fast two-dimension elemental mapping of solid samples.

Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses ofmore » 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.« less

Development of a 33 kV, 20 A long pulse converter modulator for high average power klystron

NASA Astrophysics Data System (ADS)

Reghu, T.; Mandloi, V.; Shrivastava, Purushottam

2014-05-01

Research, design, and development of high average power, long pulse modulators for the proposed Indian Spallation Neutron Source are underway at Raja Ramanna Centre for Advanced Technology. With this objective, a prototype of long pulse modulator capable of delivering 33 kV, 20 A at 5 Hz repetition rate has been designed and developed. Three Insulated Gate Bipolar Transistors (IGBT) based switching modules driving high frequency, high voltage transformers have been used to generate high voltage output. The IGBT based switching modules are shifted in phase by 120° with respect to each other. The switching frequency is 25 kHz. Pulses of 1.6 ms pulse width, 80 μs rise time, and 70 μs fall time have been achieved at the modulator output. A droop of ±0.6% is achieved using a simple segmented digital droop correction technique. The total fault energy transferred to the load during fault has been measured by conducting wire burn tests and is found to be within 3.5 J.

An electronic flow control system for a variable-rate tree sprayer

USDA-ARS?s Scientific Manuscript database

Precise modulation of nozzle flow rates is a critical measure to achieve variable-rate spray applications. An electronic flow rate control system accommodating with microprocessors and pulse width modulation (PWM) controlled solenoid valves was designed to manipulate the output of spray nozzles inde...

Development of digital flow control system for multi-channel variable-rate sprayers

USDA-ARS?s Scientific Manuscript database

Precision modulation of nozzle flow rates is a critical step for variable-rate spray applications in orchards and ornamental nurseries. An automatic flow rate control system activated with microprocessors and pulse width modulation (PWM) controlled solenoid valves was developed to control flow rates...

Digital gate pulse generator for cycloconverter control

DOEpatents

Klein, Frederick F.; Mutone, Gioacchino A.

1989-01-01

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

The influence of erbium:yttrium-aluminum-garnet laser ablation with variable pulse width on morphology and microleakage of composite restorations.

PubMed

Navarro, Ricardo Scarparo; Gouw-Soares, Sheila; Cassoni, Alessandra; Haypek, Patricia; Zezell, Denise Maria; de Paula Eduardo, Carlos

2010-11-01

The objective of this study was to evaluate the influence of various pulse widths with different energy parameters of erbium:yttrium-aluminum-garnet (Er:YAG) laser (2.94 mum) on the morphology and microleakage of cavities restored with composite resin. Identically sized class V cavities were prepared on the buccal surfaces of 54 bovine teeth by high-speed drill (n = 6, control, group 1) and prepared by Er:YAG laser (Fidelis 320A, Fotona, Slovenia) with irradiation parameters of 350 mJ/ 4 Hz or 400 mJ/2 Hz and pulse width: group 2, very short pulse (VSP); group 3, short pulse (SP); group 4, long pulse (LP); group 5, very long pulse (VLP). All cavities were filled with composite resin (Z-250-3 M), stored at 37 degrees C in distilled water, polished after 24 h, and thermally stressed (700 cycles/5-55 degrees C). The teeth were impermeabilized, immersed in 50% silver nitrate solution for 8 h, sectioned longitudinally, and exposed to Photoflood light for 10 min to reveal the stain. The leakage was evaluated under stereomicroscope by three different examiners, in a double-blind fashion, and scored (0-3). The results were analyzed by Kruskal-Wallis test (P > 0.05) and showed that there was no significant differences between the groups tested. Under scanning electron microscopy (SEM) the morphology of the cavities prepared by laser showed irregular enamel margins and dentin internal walls, and a more conservative pattern than that of conventional cavities. The different power settings and pulse widths of Er:YAG laser in cavity preparation had no influence on microleakage of composite resin restorations.

Global synchronization of parallel processors using clock pulse width modulation

DOEpatents

Chen, Dong; Ellavsky, Matthew R.; Franke, Ross L.; Gara, Alan; Gooding, Thomas M.; Haring, Rudolf A.; Jeanson, Mark J.; Kopcsay, Gerard V.; Liebsch, Thomas A.; Littrell, Daniel; Ohmacht, Martin; Reed, Don D.; Schenck, Brandon E.; Swetz, Richard A.

2013-04-02

A circuit generates a global clock signal with a pulse width modification to synchronize processors in a parallel computing system. The circuit may include a hardware module and a clock splitter. The hardware module may generate a clock signal and performs a pulse width modification on the clock signal. The pulse width modification changes a pulse width within a clock period in the clock signal. The clock splitter may distribute the pulse width modified clock signal to a plurality of processors in the parallel computing system.

Fast range estimation based on active range-gated imaging for coastal surveillance

NASA Astrophysics Data System (ADS)

Kong, Qingshan; Cao, Yinan; Wang, Xinwei; Tong, Youwan; Zhou, Yan; Liu, Yuliang

2012-11-01

Coastal surveillance is very important because it is useful for search and rescue, illegal immigration, or harbor security and so on. Furthermore, range estimation is critical for precisely detecting the target. Range-gated laser imaging sensor is suitable for high accuracy range especially in night and no moonlight. Generally, before detecting the target, it is necessary to change delay time till the target is captured. There are two operating mode for range-gated imaging sensor, one is passive imaging mode, and the other is gate viewing mode. Firstly, the sensor is passive mode, only capturing scenes by ICCD, once the object appears in the range of monitoring area, we can obtain the course range of the target according to the imaging geometry/projecting transform. Then, the sensor is gate viewing mode, applying micro second laser pulses and sensor gate width, we can get the range of targets by at least two continuous images with trapezoid-shaped range intensity profile. This technique enables super-resolution depth mapping with a reduction of imaging data processing. Based on the first step, we can calculate the rough value and quickly fix delay time which the target is detected. This technique has overcome the depth resolution limitation for 3D active imaging and enables super-resolution depth mapping with a reduction of imaging data processing. By the two steps, we can quickly obtain the distance between the object and sensor.

Vehicle charging and potential on the STS-3 mission

NASA Technical Reports Server (NTRS)

Williamson, R.

1983-01-01

An electron gun with fast pulse capability was used in the vehicle charging and potential experiment carried on the OSS-1 pallet to study dielectric charging, return current mechanisms, and the techniques required to manage the electrical charging of the orbiter. Return currents and charging of the dielectrics were measured during electron beam emission and plasma characteristics in the payload bay were determined in the absence of electron beam emission. The fast pulse electron generator, charge current probes, spherical retarding potential analyzer, and the digital control interface unit which comprise the experiment are described. Results show that the thrusters produce disturbances which are variable in character and magnitude. Strong ram/wake effects were seen in the ion densities in the bay. Vehicle potentials are variable with respect to the plasma and depend upon location on the vehicle relative to the main engine nozzles, the vehicle attitude, and the direction of the geomagnetic field.

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

2018-02-01

We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

A frequency and pulse-width co-modulation strategy for transcutaneous neuromuscular electrical stimulation based on sEMG time-domain features

NASA Astrophysics Data System (ADS)

Zhou, Yu-Xuan; Wang, Hai-Peng; Bao, Xue-Liang; Lü, Xiao-Ying; Wang, Zhi-Gong

2016-02-01

Objective. Surface electromyography (sEMG) is often used as a control signal in neuromuscular electrical stimulation (NMES) systems to enhance the voluntary control and proprioceptive sensory feedback of paralyzed patients. Most sEMG-controlled NMES systems use the envelope of the sEMG signal to modulate the stimulation intensity (current amplitude or pulse width) with a constant frequency. The aims of this study were to develop a strategy that co-modulates frequency and pulse width based on features of the sEMG signal and to investigate the torque-reproduction performance and the level of fatigue resistance achieved with our strategy. Approach. We examined the relationships between wrist torque and two stimulation parameters (frequency and pulse width) and between wrist torque and two sEMG time-domain features (mean absolute value (MAV) and number of slope sign changes (NSS)) in eight healthy volunteers. By using wrist torque as an intermediate variable, customized and generalized transfer functions were constructed to convert the two features of the sEMG signal into the two stimulation parameters, thereby establishing a MAV/NSS dual-coding (MNDC) algorithm. Wrist torque reproduction performance was assessed by comparing the torque generated by the algorithms with that originally recorded during voluntary contractions. Muscle fatigue was assessed by measuring the decline percentage of the peak torque and by comparing the torque time integral of the response to test stimulation trains before and after fatigue sessions. Main Results. The MNDC approach could produce a wrist torque that closely matched the voluntary wrist torque. In addition, a smaller decay in the wrist torque was observed after the MNDC-coded fatigue stimulation was applied than after stimulation using pulse-width modulation alone. Significance. Compared with pulse-width modulation stimulation strategies that are based on sEMG detection, the MNDC strategy is more effective for both voluntary muscle force reproduction and muscle fatigue reduction.

FUZZY LOGIC BASED INTELLIGENT CONTROL OF A VARIABLE SPEED CAGE MACHINE WIND GENERATION SYSTEM

EPA Science Inventory

The paper describes a variable-speed wind generation system where fuzzy logic principles are used to optimize efficiency and enhance performance control. A squirrel cage induction generator feeds the power to a double-sided pulse width modulated converter system which either pump...

FUZZY LOGIC BASED INTELLIGENT CONTROL OF A VARIABLE SPEED CAGE MACHINE WIND GENERATION SYSTEM

EPA Science Inventory

The report gives results of a demonstration of the successful application of fuzzy logic to enhance the performance and control of a variable-speed wind generation system. A squirrel cage induction generator feeds the power to either a double-sided pulse-width modulation converte...

Spray outputs from a variable-rate sprayer manipulated with PWM solenoid valves

USDA-ARS?s Scientific Manuscript database

Pressure fluctuations during variable-rate spray applications can affect nozzle flow rate fluctuations, resulting in spray outputs that do not coincide with the prescribed canopy structure volume. Variations in total flow rate discharged from 40 nozzles, each coupled with a pulse-width-modulated (PW...

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Two-dimensional electromagnetic Child-Langmuir law of a short-pulse electron flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, S. H.; Tai, L. C.; Liu, Y. L.

Two-dimensional electromagnetic particle-in-cell simulations were performed to study the effect of the displacement current and the self-magnetic field on the space charge limited current density or the Child-Langmuir law of a short-pulse electron flow with a propagation distance of {zeta} and an emitting width of W from the classical regime to the relativistic regime. Numerical scaling of the two-dimensional electromagnetic Child-Langmuir law was constructed and it scales with ({zeta}/W) and ({zeta}/W){sup 2} at the classical and relativistic regimes, respectively. Our findings reveal that the displacement current can considerably enhance the space charge limited current density as compared to the well-knownmore » two-dimensional electrostatic Child-Langmuir law even at the classical regime.« less

Method and apparatus for measuring the intensity and phase of an ultrashort light pulse

DOEpatents

Kane, Daniel J.; Trebino, Rick P.

1998-01-01

The pulse shape I(t) and phase evolution x(t) of ultrashort light pulses are obtained using an instantaneously responding nonlinear optical medium to form a signal pulse. A light pulse, such a laser pulse, is split into a gate pulse and a probe pulse, where the gate pulse is delayed relative to the probe pulse. The gate pulse and the probe pulse are combined within an instantaneously responding optical medium to form a signal pulse functionally related to a temporal slice of the gate pulse corresponding to the time delay of the probe pulse. The signal pulse is then input to a wavelength-selective device to output pulse field information comprising intensity vs. frequency for a first value of the time delay. The time delay is varied over a range of values effective to yield an intensity plot of signal intensity vs. wavelength and delay. In one embodiment, the beams are overlapped at an angle so that a selected range of delay times is within the intersection to produce a simultaneous output over the time delays of interest.

Noise filtering of composite pulses for singlet-triplet qubits

PubMed Central

Yang, Xu-Chen; Wang, Xin

2016-01-01

Semiconductor quantum dot spin qubits are promising candidates for quantum computing. In these systems, the dynamically corrected gates offer considerable reduction of gate errors and are therefore of great interest both theoretically and experimentally. They are, however, designed under the static-noise model and may be considered as low-frequency filters. In this work, we perform a comprehensive theoretical study of the response of a type of dynamically corrected gates, namely the supcode for singlet-triplet qubits, to realistic 1/f noises with frequency spectra 1/ωα. Through randomized benchmarking, we have found that supcode offers improvement of the gate fidelity for α  1 and the improvement becomes exponentially more pronounced with the increase of the noise exponent in the range 1  α ≤ 3 studied. On the other hand, for small α, supcode will not offer any improvement. The δJ-supcode, specifically designed for systems where the nuclear noise is absent, is found to offer additional error reduction than the full supcode for charge noises. The computed filter transfer functions of the supcode gates are also presented. PMID:27383129

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

NASA Technical Reports Server (NTRS)

Lu, Wei; Krainak, Michael A.; Yang, Guangning; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies ((is) greater than 50%) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

Low-Noise Free-Running High-Rate Photon-Counting for Space Communication and Ranging

NASA Technical Reports Server (NTRS)

Lu, Wei; Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Merritt, Scott

2016-01-01

We present performance data for low-noise free-running high-rate photon counting method for space optical communication and ranging. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We successfully measured real-time communication performance using both the 2 detected-photon threshold and logic AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects without using other method of Time Gating The HgCdTe APD array routinely demonstrated very high photon detection efficiencies (50) at near infrared wavelength. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output. NASA GSFC has tested both detectors for their potential application for space communications and ranging. We developed and compare their performances using both the 2 detected photon threshold and coincidence methods.

The Role of Water Vapor and Dissociative Recombination Processes in Solar Array Arc Initiation

NASA Technical Reports Server (NTRS)

Galofar, J.; Vayner, B.; Degroot, W.; Ferguson, D.

2002-01-01

Experimental plasma arc investigations involving the onset of arc initiation for a negatively biased solar array immersed in low-density plasma have been performed. Previous studies into the arc initiation process have shown that the most probable arcing sites tend to occur at the triple junction involving the conductor, dielectric and plasma. More recently our own experiments have led us to believe that water vapor is the main causal factor behind the arc initiation process. Assuming the main component of the expelled plasma cloud by weight is water, the fastest process available is dissociative recombination (H2O(+) + e(-) (goes to) H* + OH*). A model that agrees with the observed dependency of arc current pulse width on the square root of capacitance is presented. A 400 MHz digital storage scope and current probe was used to detect arcs at the triple junction of a solar array. Simultaneous measurements of the arc trigger pulse, the gate pulse, the arc current and the arc voltage were then obtained. Finally, a large number of measurements of individual arc spectra were obtained in very short time intervals, ranging from 10 to 30 microseconds, using a 1/4 a spectrometer coupled with a gated intensified CCD. The spectrometer was systematically tuned to obtain optical arc spectra over the entire wavelength range of 260 to 680 nanometers. All relevant atomic lines and molecular bands were then identified.

The voltage sensor of excitation–contraction coupling in mammals: Inactivation and interaction with Ca2+

PubMed Central

2017-01-01

In skeletal muscle, the four-helix voltage-sensing modules (VSMs) of CaV1.1 calcium channels simultaneously gate two Ca2+ pathways: the CaV1.1 pore itself and the RyR1 calcium release channel in the sarcoplasmic reticulum. Here, to gain insight into the mechanism by which VSMs gate RyR1, we quantify intramembrane charge movement associated with VSM activation (sensing current) and gated Ca2+ release flux in single muscle cells of mice and rats. As found for most four-helix VSMs, upon sustained depolarization, rodent VSMs lose the ability to activate Ca2+ release channels opening; their properties change from a functionally capable mode, in which the mobile sensor charge is called charge 1, to an inactivated mode, charge 2, with a voltage dependence shifted toward more negative voltages. We find that charge 2 is promoted and Ca2+ release inactivated when resting, well-polarized muscle cells are exposed to low extracellular [Ca2+] and that the opposite occurs in high [Ca2+]. It follows that murine VSMs are partly inactivated at rest, which establishes the reduced availability of voltage sensing as a pathogenic mechanism in disorders of calcemia. We additionally find that the degree of resting inactivation is significantly different in two mouse strains, which underscores the variability of voltage sensor properties and their vulnerability to environmental conditions. Our studies reveal that the resting and activated states of VSMs are equally favored by extracellular Ca2+. Promotion by an extracellular species of two states of the VSM that differ in the conformation of the activation gate requires the existence of a second gate, inactivation, topologically extracellular and therefore accessible from outside regardless of the activation state. PMID:29021148

[Study on Accurately Controlling Discharge Energy Method Used in External Defibrillator].

PubMed

Song, Biao; Wang, Jianfei; Jin, Lian; Wu, Xiaomei

2016-01-01

This paper introduces a new method which controls discharge energy accurately. It is achieved by calculating target voltage based on transthoracic impedance and accurately controlling charging voltage and discharge pulse width. A new defibrillator is designed and programmed using this method. The test results show that this method is valid and applicable to all kinds of external defibrillators.

Modified Blumlein pulse-forming networks for bioelectrical applications.

PubMed

Romeo, Stefania; Sarti, Maurizio; Scarfì, Maria Rosaria; Zeni, Luigi

2010-07-01

Intense nanosecond pulsed electric fields (nsPEFs) have been shown to induce, on intracellular structures, interesting effects dependent on electrical exposure conditions (pulse length and amplitude, repetition frequency and number of pulses), which are known in the literature as "bioelectrical effects" (Schoenbach et al., IEEE Trans Plasma Sci 30:293-300, 2002). In particular, pulses with a shorter width than the plasma membrane charging time constant (about 100 ns for mammalian cells) can penetrate the cell and trigger effects such as permeabilization of intracellular membranes, release of Ca(2+) and apoptosis induction. Moreover, the observed effects have led to exploration of medical applications, like the treatment of melanoma tumors (Nuccitelli et al., Biochem Biophys Res Commun 343:351-360, 2006). Pulsed electric fields allowing such effects usually range from several tens to a few hundred nanoseconds in duration and from a few to several tens of megavolts per meter in amplitude (Schoenbach et al., IEEE Trans Diel Elec Insul 14:1088-1109, 2007); however, the biological effects of subnanosecond pulses have been also investigated (Schoenbach et al., IEEE Trans Plasma Sci 36:414-422, 2008). The use of such a large variety of pulse parameters suggests that highly flexible pulse-generating systems, able to deliver wide ranges of pulse durations and amplitudes, are strongly required in order to explore effects and applications related to different exposure conditions. The Blumlein pulse-forming network is an often-employed circuit topology for the generation of high-voltage electric pulses with fixed pulse duration. An innovative modification to the Blumlein circuit has been recently devised which allows generation of pulses with variable amplitude, duration and polarity. Two different modified Blumlein pulse-generating systems are presented in this article, the first based on a coaxial cable configuration, matching microscopic slides as a pulse-delivery system, and the other based on microstrip transmission lines and designed to match cuvettes for the exposure of cell suspensions.

Methods of high current magnetic field generator for transcranial magnetic stimulation application

NASA Astrophysics Data System (ADS)

Bouda, N. R.; Pritchard, J.; Weber, R. J.; Mina, M.

2015-05-01

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/-20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG1) and MOSFET circuits (HCMFG2) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Methods of high current magnetic field generator for transcranial magnetic stimulation application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouda, N. R., E-mail: nybouda@iastate.edu; Pritchard, J.; Weber, R. J.

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/−20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG{sub 1}) and MOSFET circuits (HCMFG{sub 2}) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

NASA Astrophysics Data System (ADS)

Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Liero, A.; Hoffmann, Th.; Erbert, G.; Tränkle, G.

2015-03-01

Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling. Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses. In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M2lat ~ 1.1 and M2ver ~ 1.2 up to 4 W pulse power.

An injection seeded single frequency Nd:YAG Q-switched laser with precisely controllable laser pulse firing time

NASA Astrophysics Data System (ADS)

Wu, Frank F.; Khizhnyak, Anatoliy; Markov, Vladimir

2010-02-01

We have realized a single frequency Q-switched Nd:YAG laser with precisely controllable lasing time and thus enabled synchronization of multi-laser systems. The use of injection seeding to the slave ring oscillator results in unidirectional Q-switched laser oscillation with suppression of bidirectional Q-switched oscillation that otherwise would be initiated from spontaneous emission if the seeding laser is not present. Under normal condition, the cavity is high in loss during the pumping period; then a Pockels cell opens the cavity to form the pulse build up, with a second Pockels cell to perform cavity dumping, generating the Q-switched pulse output with optimized characteristics. The two Pockels cells can be replaced by a single unit if an adjustable gated electrical pulse is applied to the Pockels cell in which the pulse front is used to open the cavity and the falling edge to dump the laser pulse. Proper selection of the pump parameters and Pockels-cell gating enables operation of the system in a mode in which the Q-switched pulse can be formed only under the seeding condition. The advantage of the realized regime is in stable laser operation with no need in adjustment of the seeded light wavelength and the mode of the cavity. It is found that the frequency of the Q-switched laser radiation matches well to the injected seeded laser mode. By using two-stage amplifiers, an output energy better than 300 mJ has been achieved in MOPA configuration without active control of the cavity length and with pulse width adjustability from several nanoseconds to 20 ns. The Q-switched oscillator operates not only at precisely controlled firing time but also can be tuned over wide range. This will enable multi-laser systems synchronization and frequency locking down each other if necessary.

High voltage pulse generator. [Patent application

DOEpatents

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

Driving qubit phase gates with sech shaped pulses

NASA Astrophysics Data System (ADS)

Long, Junling; Ku, Hsiang-Sheng; Wu, Xian; Lake, Russell; Barnes, Edwin; Economou, Sophia; Pappas, David

As shown in 1932 by Rozen and Zener, the Rabi model has a unique solution whereby, for a given pulse length or amplitude, a sech(t/sigma) shaped pulse can be used to drive complete oscillations around the Bloch sphere that are independent of detuning with only a resultant detuning-dependent phase accumulation. Using this property, single qubit phase gates and two-qubit CZ gates have been proposed. In this work we explore the effect of different drive pulse shapes, i.e. square, Gaussian, and sech, as a function of detuning for Rabi oscillations of a superconducting transmon qubit. An arbitrary, single-qubit phase gate is demonstrated with the sech(t/sigma) pulse, and full tomography is performed to extract the fidelity. This is the first step towards high fidelity, low leakage two qubit CZ gates, and illustrates the efficacy of using analytic solutions of the qubit drive prior to optimal pulse shaping.

Qubit lattice coherence induced by electromagnetic pulses in superconducting metamaterials.

PubMed

Ivić, Z; Lazarides, N; Tsironis, G P

2016-07-12

Quantum bits (qubits) are at the heart of quantum information processing schemes. Currently, solid-state qubits, and in particular the superconducting ones, seem to satisfy the requirements for being the building blocks of viable quantum computers, since they exhibit relatively long coherence times, extremely low dissipation, and scalability. The possibility of achieving quantum coherence in macroscopic circuits comprising Josephson junctions, envisioned by Legett in the 1980's, was demonstrated for the first time in a charge qubit; since then, the exploitation of macroscopic quantum effects in low-capacitance Josephson junction circuits allowed for the realization of several kinds of superconducting qubits. Furthermore, coupling between qubits has been successfully achieved that was followed by the construction of multiple-qubit logic gates and the implementation of several algorithms. Here it is demonstrated that induced qubit lattice coherence as well as two remarkable quantum coherent optical phenomena, i.e., self-induced transparency and Dicke-type superradiance, may occur during light-pulse propagation in quantum metamaterials comprising superconducting charge qubits. The generated qubit lattice pulse forms a compound "quantum breather" that propagates in synchrony with the electromagnetic pulse. The experimental confirmation of such effects in superconducting quantum metamaterials may open a new pathway to potentially powerful quantum computing.

The Impact of Gate Width Setting and Gate Utilization Factors on Plutonium Assay in Passive Correlated Neutron Counting

DOE PAGES

Henzlova, Daniela; Menlove, Howard Olsen; Croft, Stephen; ...

2015-06-15

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimummore » gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated.« less

Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications.

PubMed

Merced-Grafals, Emmanuelle J; Dávila, Noraica; Ge, Ning; Williams, R Stanley; Strachan, John Paul

2016-09-09

Beyond use as high density non-volatile memories, memristors have potential as synaptic components of neuromorphic systems. We investigated the suitability of tantalum oxide (TaOx) transistor-memristor (1T1R) arrays for such applications, particularly the ability to accurately, repeatedly, and rapidly reach arbitrary conductance states. Programming is performed by applying an adaptive pulsed algorithm that utilizes the transistor gate voltage to control the SET switching operation and increase programming speed of the 1T1R cells. We show the capability of programming 64 conductance levels with <0.5% average accuracy using 100 ns pulses and studied the trade-offs between programming speed and programming error. The algorithm is also utilized to program 16 conductance levels on a population of cells in the 1T1R array showing robustness to cell-to-cell variability. In general, the proposed algorithm results in approximately 10× improvement in programming speed over standard algorithms that do not use the transistor gate to control memristor switching. In addition, after only two programming pulses (an initialization pulse followed by a programming pulse), the resulting conductance values are within 12% of the target values in all cases. Finally, endurance of more than 10(6) cycles is shown through open-loop (single pulses) programming across multiple conductance levels using the optimized gate voltage of the transistor. These results are relevant for applications that require high speed, accurate, and repeatable programming of the cells such as in neural networks and analog data processing.

Axial motion of collector plasma in a relativistic backward wave oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Renzhen; Chen, Changhua; Deng, Yuqun

2016-06-15

In this paper, it is proposed that plasma formed at the collector may drift back to the cathode and cause pulse shortening of the relativistic backward wave oscillator. Theoretical analysis shows that the axial drift velocity of plasma ions can be up to 5 mm/ns due to the presence of space charge potential provided by an intense relativistic electron beam. Particle-in-cell simulations indicate that the plasma electrons are initially trapped around the collector surface. With the accumulation of the plasma ions, a large electrostatic field forms and drives the plasma electrons to overcome the space charge potential and enter the beam-wavemore » interaction region along the magnetic field lines. As a result, the beam current modulation is disturbed and the output microwave power falls rapidly. The plasma ions move in the beam-wave interaction region with an average axial velocity of 5–8 mm/ns. After the plasma ions reach the diode region, the emitted current at the cathode rises due to the charge neutralizations by the ions. The impedance collapse leads to further decrease of the microwave power. In experiments, when the diode voltage and beam current were 850 kV and 9.2 kA, and the collector radius was 2.15 cm, the output microwave power was 2.4 GW with a pulse width of less than 20 ns. The ion drift velocity was estimated to be about 5 mm/ns. After an improved collector with 3.35 cm radius was adopted, the pulse width was prolonged to more than 30 ns.« less

High speed photography, videography, and photonics III; Proceedings of the Meeting, San Diego, CA, August 22, 23, 1985

NASA Technical Reports Server (NTRS)

Ponseggi, B. G. (Editor); Johnson, H. C. (Editor)

1985-01-01

Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.

Slow Inactivation in Shaker K Channels Is Delayed by Intracellular Tetraethylammonium

PubMed Central

González-Pérez, Vivian; Neely, Alan; Tapia, Christian; González-Gutiérrez, Giovanni; Contreras, Gustavo; Orio, Patricio; Lagos, Verónica; Rojas, Guillermo; Estévez, Tania; Stack, Katherine; Naranjo, David

2008-01-01

After removal of the fast N-type inactivation gate, voltage-sensitive Shaker (Shaker IR) K channels are still able to inactivate, albeit slowly, upon sustained depolarization. The classical mechanism proposed for the slow inactivation observed in cell-free membrane patches—the so called C inactivation—is a constriction of the external mouth of the channel pore that prevents K+ ion conduction. This constriction is antagonized by the external application of the pore blocker tetraethylammonium (TEA). In contrast to C inactivation, here we show that, when recorded in whole Xenopus oocytes, slow inactivation kinetics in Shaker IR K channels is poorly dependent on external TEA but severely delayed by internal TEA. Based on the antagonism with internally or externally added TEA, we used a two-pulse protocol to show that half of the channels inactivate by way of a gate sensitive to internal TEA. Such gate had a recovery time course in the tens of milliseconds range when the interpulse voltage was −90 mV, whereas C-inactivated channels took several seconds to recover. Internal TEA also reduced gating charge conversion associated to slow inactivation, suggesting that the closing of the internal TEA-sensitive inactivation gate could be associated with a significant amount of charge exchange of this type. We interpreted our data assuming that binding of internal TEA antagonized with U-type inactivation (Klemic, K.G., G.E. Kirsch, and S.W. Jones. 2001. Biophys. J. 81:814–826). Our results are consistent with a direct steric interference of internal TEA with an internally located slow inactivation gate as a “foot in the door” mechanism, implying a significant functional overlap between the gate of the internal TEA-sensitive slow inactivation and the primary activation gate. But, because U-type inactivation is reduced by channel opening, trapping the channel in the open conformation by TEA would also yield to an allosteric delay of slow inactivation. These results provide a framework to explain why constitutively C-inactivated channels exhibit gating charge conversion, and why mutations at the internal exit of the pore, such as those associated to episodic ataxia type I in hKv1.1, cause severe changes in inactivation kinetics. PMID:19029372

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

Robustness of high-fidelity Rydberg gates with single-site addressability

NASA Astrophysics Data System (ADS)

Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

2014-09-01

Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

Mentally simulated movements in virtual reality: does Fitts's law hold in motor imagery?

PubMed

Decety, J; Jeannerod, M

1995-12-14

This study was designed to investigate mentally simulated actions in a virtual reality environment. Naive human subjects (n = 15) were instructed to imagine themselves walking in a three-dimensional virtual environment toward gates of different apparent widths placed at three different apparent distances. Each subject performed nine blocks of six trials in a randomised order. The response time (reaction time and mental walking time) was measured as the duration between an acoustic go signal and a motor signal produced by the subject. There was a combined effect on response time of both gate width and distance. Response time increased for decreasing apparent gate widths when the gate was placed at different distances. These results support the notion that mentally simulated actions are governed by central motor rules.

Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders

NASA Astrophysics Data System (ADS)

Wang, A.; Tadjer, M. J.; Calle, F.

2013-05-01

We investigated the impact of diamond heat spreading layers on the performance of AlGaN/GaN high-electron-mobility-transistors (HEMTs). A finite element method was used to simulate the thermal and electrical characteristics of the devices under dc and pulsed operation conditions. The results show that the device performance can be improved significantly by optimized heat spreading, an effect strongly dependent on the lateral thermal conductivity of the initial several micrometers of diamond deposition. Of crucial importance is the proximity of the diamond layer to the heat source, which makes this method advantageous over other thermal management procedures, especially for the device in pulsed operation. In this case, the self-heating effect can be suppressed, and it is not affected by either the substrate or its thermal boundary resistance at the GaN/substrate at wider pulses. The device with a 5 µm diamond layer can present 10.5% improvement of drain current, and the self-heating effect can be neglected for a 100 ns pulse width at 1 V gate and 20 V drain voltage.

Laser Pulse Width Dependence and Ionization Mechanism of Matrix-Assisted Laser Desorption/Ionization

NASA Astrophysics Data System (ADS)

Liang, Sheng-Ping; Lu, I.-Chung; Tsai, Shang-Ting; Chen, Jien-Lian; Lee, Yuan Tseh; Ni, Chi-Kung

2017-10-01

Ultraviolet laser pulses at 355 nm with variable pulse widths in the region from 170 ps to 1.5 ns were used to investigate the ionization mechanism of matrix-assisted laser desorption/ionization (MALDI) for matrices 2,5-dihydroxybenzoic acid (DHB), α-cyano-4-hydroxycinnamic acid (CHCA), and sinapinic acid (SA). The mass spectra of desorbed ions and the intensity and velocity distribution of desorbed neutrals were measured simultaneously for each laser shot. These quantities were found to be independent of the laser pulse width. A comparison of the experimental measurements and numerical simulations according to the multiphoton ionization, coupled photophysical and chemical dynamics (CPCD), and thermally induced proton transfer models showed that the predictions of thermally induced proton transfer model were in agreement with the experimental data, but those of the multiphoton ionization model were not. Moreover, the predictions of the CPCD model based on singlet-singlet energy pooling were inconsistent with the experimental data of CHCA and SA, but were consistent with the experimental data of DHB only when some parameters used in the model were adjusted to extreme values. [Figure not available: see fulltext.

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Wang, Chun-Chi

2018-04-01

To study the function of channel width in multiple-submicron channel array, we fabricated the enhancement mode GaN-based gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) with a channel width of 450 nm and 195 nm, respectively. In view of the enhanced gate controllability in a narrower fin-channel structure, the transconductance was improved from 115 mS/mm to 151 mS/mm, the unit gain cutoff frequency was improved from 6.2 GHz to 6.8 GHz, and the maximum oscillation frequency was improved from 12.1 GHz to 13.1 GHz of the devices with a channel width of 195 nm, compared with the devices with a channel width of 450 nm.

Femtosecond few- to single-electron point-projection microscopy for nanoscale dynamic imaging

PubMed Central

Bainbridge, A. R.; Barlow Myers, C. W.; Bryan, W. A.

2016-01-01

Femtosecond electron microscopy produces real-space images of matter in a series of ultrafast snapshots. Pulses of electrons self-disperse under space-charge broadening, so without compression, the ideal operation mode is a single electron per pulse. Here, we demonstrate femtosecond single-electron point projection microscopy (fs-ePPM) in a laser-pump fs-e-probe configuration. The electrons have an energy of only 150 eV and take tens of picoseconds to propagate to the object under study. Nonetheless, we achieve a temporal resolution with a standard deviation of 114 fs (equivalent to a full-width at half-maximum of 269 ± 40 fs) combined with a spatial resolution of 100 nm, applied to a localized region of charge at the apex of a nanoscale metal tip induced by 30 fs 800 nm laser pulses at 50 kHz. These observations demonstrate real-space imaging of reversible processes, such as tracking charge distributions, is feasible whilst maintaining femtosecond resolution. Our findings could find application as a characterization method, which, depending on geometry, could resolve tens of femtoseconds and tens of nanometres. Dynamically imaging electric and magnetic fields and charge distributions on sub-micron length scales opens new avenues of ultrafast dynamics. Furthermore, through the use of active compression, such pulses are an ideal seed for few-femtosecond to attosecond imaging applications which will access sub-optical cycle processes in nanoplasmonics. PMID:27158637

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

Dual amplitude pulse generator for radiation detectors

DOEpatents

Hoggan, Jerry M.; Kynaston, Ronnie L.; Johnson, Larry O.

2001-01-01

A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

All-Optical Two-Dimensional Serial-to-Parallel Pulse Converter Using an Organic Film with Femtosecond Optical Response

NASA Astrophysics Data System (ADS)

Tatsuura, Satoshi; Wada, Osamu; Furuki, Makoto; Tian, Minquan; Sato, Yasuhiro; Iwasa, Izumi; Pu, Lyong Sun

2001-04-01

In this study, we introduce a new concept of all-optical two-dimensional serial-to-parallel pulse converters. Femtosecond optical pulses can be understood as thin plates of light traveling in space. When a femtosecond signal-pulse train and a single gate pulse were fed onto a material with a finite incident angle, each signal-pulse plate met the gate-pulse plate at different locations in the material due to the time-of-flight effect. Meeting points can be made two-dimensional by adding a partial time delay to the gate pulse. By placing a nonlinear optical material at an appropriate position, two-dimensional serial-to-parallel conversion of a signal-pulse train can be achieved with a single gate pulse. We demonstrated the detection of parallel outputs from a 1-Tb/s optical-pulse train through the use of a BaB2O4 crystal. We also succeeded in demonstrating 1-Tb/s serial-to-parallel operation through the use of a novel organic nonlinear optical material, squarylium-dye J-aggregate film, which exhibits ultrafast recovery of bleached absorption.

Pulse Width Affects Scalp Sensation of Transcranial Magnetic Stimulation.

PubMed

Peterchev, Angel V; Luber, Bruce; Westin, Gregory G; Lisanby, Sarah H

Scalp sensation and pain comprise the most common side effect of transcranial magnetic stimulation (TMS), which can reduce tolerability and complicate experimental blinding. We explored whether changing the width of single TMS pulses affects the quality and tolerability of the resultant somatic sensation. Using a controllable pulse parameter TMS device with a figure-8 coil, single monophasic magnetic pulses inducing electric field with initial phase width of 30, 60, and 120 µs were delivered in 23 healthy volunteers. Resting motor threshold of the right first dorsal interosseus was determined for each pulse width, as reported previously. Subsequently, pulses were delivered over the left dorsolateral prefrontal cortex at each of the three pulse widths at two amplitudes (100% and 120% of the pulse-width-specific motor threshold), with 20 repetitions per condition delivered in random order. After each pulse, subjects rated 0-to-10 visual analog scales for Discomfort, Sharpness, and Strength of the sensation. Briefer TMS pulses with amplitude normalized to the motor threshold were perceived as slightly more uncomfortable than longer pulses (with an average 0.89 point increase on the Discomfort scale for pulse width of 30 µs compared to 120 µs). The sensation of the briefer pulses was felt to be substantially sharper (2.95 points increase for 30 µs compared to 120 µs pulse width), but not stronger than longer pulses. As expected, higher amplitude pulses increased the perceived discomfort and strength, and, to a lesser degree the perceived sharpness. Our findings contradict a previously published hypothesis that briefer TMS pulses are more tolerable. We discovered that the opposite is true, which merits further study as a means of enhancing tolerability in the context of repetitive TMS. Copyright © 2016 Elsevier Inc. All rights reserved.

Pulse width affects scalp sensation of transcranial magnetic stimulation

PubMed Central

Peterchev, Angel V.; Luber, Bruce; Westin, Gregory G.; Lisanby, Sarah H.

2016-01-01

Background Scalp sensation and pain comprise the most common side effect of transcranial magnetic stimulation (TMS), which can reduce tolerability and complicate experimental blinding. Objective We explored whether changing the width of single TMS pulses affects the quality and tolerability of the resultant somatic sensation. Methods Using a controllable pulse parameter TMS device with a figure-8 coil, single monophasic magnetic pulses inducing electric field with initial phase width of 30, 60, and 120 µs were delivered in 23 healthy volunteers. Resting motor threshold of the right first dorsal interosseus was determined for each pulse width, as reported previously. Subsequently, pulses were delivered over the left dorsolateral prefrontal cortex at each of the three pulse widths at two amplitudes (100% and 120% of the pulse-width-specific motor threshold), with 20 repetitions per condition delivered in random order. After each pulse, subjects rated 0-to-10 visual analog scales for Discomfort, Sharpness, and Strength of the sensation. Results Briefer TMS pulses with amplitude normalized to the motor threshold were perceived as slightly more uncomfortable than longer pulses (with an average 0.89 points increase on the Discomfort scale for pulse width of 30 µs compared to 120 µs). The sensation of the briefer pulses was felt to be substantially sharper (2.95 point increase for 30 µs compared to 120 µs pulse width), but not stronger than longer pulses. As expected, higher amplitude pulses increased the perceived discomfort and strength, and, to a lesser degree the perceived sharpness. Conclusions Our findings contradict a previously published hypothesis that briefer TMS pulses are more tolerable. We discovered that the opposite is true, which merits further study as a means of enhancing tolerability in the context of repetitive TMS. PMID:28029593

Double optical gating

NASA Astrophysics Data System (ADS)

Gilbertson, Steve

The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

Method for distance determination using range-gated imaging suitable for an arbitrary pulse shape

NASA Astrophysics Data System (ADS)

Kabashnikov, Vitaly; Kuntsevich, Boris

2017-10-01

A method for distance determination with the help of range-gated viewing systems suitable for the arbitrary shape of the illumination pulse is proposed. The method is based on finding the delay time at which maximum of the return pulse energy takes place. The maximum position depends on the pulse and gate durations and, generally speaking, on the pulse shape. If the pulse length is less than or equal to the gate duration, the delay time appropriate to the maximum does not depend on the pulse shape. At equal pulse and gate durations, there is a strict local maximum, which turns into a plateau when pulse is shorter than gate duration. A delay time appropriate to the strict local maximum or the far boundary of the plateau (where non-strict maximum is) is directly related to the distance to the object. These findings are confirmed by analytical relationships for trapezoid pulses and numerical results for the real pulse shape. To verify the proposed method we used a vertical wall located at different distances from 15 to 120m as an observed object. Delay time was changing discretely in increments of 5 ns. Maximum of the signal was determined by visual observation of the object on the monitor screen. The distance defined by the proposed method coincided with the direct measurement with accuracy 1- 2m, which is comparable with the delay time step multiplied by half of the light velocity. The results can be useful in the development of 3-D vision systems.

Radiation Effects On Emerging Electronic Materials And Devices

DTIC Science & Technology

2010-01-17

RADIATION EFFECTS ON EMERGING ELECTRONIC MATERIALS AND DEVICES FINAL PERFORMANCE REPORT PREPARED FOR: Kitt Reinhardt AFOSR/NE 875 N...and the other with metal gates and a high-K gate dielectric. These devices were programmed using both back-gate pulse and gate induced drain leakage... metal gate process GIDL method Fig. 1. Sensing margin as a function of total ionizing dose for nMOS 1T-DRAM cells programmed by back-gate pulse and

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boumaaraf, Abdelâali, E-mail: aboumaaraf@yahoo.fr; University of Farhat Abbas Setif1, Sétif, 19000; Mohamadi, Tayeb

In this paper, we present the FPGA implementation of the multiple pulse width modulation (MPWM) signal generation with repetition of data segments, applied to the variable frequency variable voltage systems and specially at to the photovoltaic water pumping system, in order to generate a signal command very easily between 10 Hz to 60 Hz with a small frequency and reduce the cost of the control system.

Double optical gating of high-order harmonic generation with carrier-envelope phase stabilized lasers.

PubMed

Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan; Khan, Sabih D; Shakya, Mahendra M; Moon, Eric; Chang, Zenghu

2008-03-14

We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2 pi radians.

Double Optical Gating of High-Order Harmonic Generation with Carrier-Envelope Phase Stabilized Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan

2008-03-14

We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2{pi} radians.

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Corps of Engineers Hydraulic Design Criteria. Volume 2

DTIC Science & Technology

1977-01-01

21.7 (Chart 310-1/1) 6 a = T - =0.3 ft. 2.7 Effective pressure D + a = 75.0 + 0.3 = 75.3 ft. I : CREST GATES1 WAVC PRESSURE SAMPLE COMPUTATION HYDRAULIC... T -x 75.3.- 25.7 ft Maximum hydraulic load on gate (R) RR y + -j--- x gate height V y - specific weight of water -62.4 lb/ft 3 16.41.7;+25.7)2...j- xhih f tutr -62.4 ( -2;5.) 80 - 192,000 lb/ft of width / t Note: Equivalent for still-water level is 175,000 lb/ft of width. CREST GATES WAVE

Gated strip proportional detector

DOEpatents

Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

1985-02-19

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Gated strip proportional detector

DOEpatents

Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

1987-01-01

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Effects of Rate on Analgesia in Kilohertz Frequency Spinal Cord Stimulation: Results of the PROCO Randomized Controlled Trial

PubMed Central

Tavakkolizadeh, Moein; Love‐Jones, Sarah; Patel, Nikunj K.; Gu, Jianwen Wendy; Bains, Amarpreet; Doan, Que; Moffitt, Michael

2017-01-01

Objective The PROCO RCT is a multicenter, double‐blind, crossover, randomized controlled trial (RCT) that investigated the effects of rate on analgesia in kilohertz frequency (1–10 kHz) spinal cord stimulation (SCS). Materials and Methods Patients were implanted with SCS systems and underwent an eight‐week search to identify the best location (“sweet spot”) of stimulation at 10 kHz within the searched region (T8–T11). An electronic diary (e‐diary) prompted patients for pain scores three times per day. Patients who responded to 10 kHz per e‐diary numeric rating scale (ED‐NRS) pain scores proceeded to double‐blind rate randomization. Patients received 1, 4, 7, and 10 kHz SCS at the same sweet spot found for 10 kHz in randomized order (four weeks at each frequency). For each frequency, pulse width and amplitude were titrated to optimize therapy. Results All frequencies provided equivalent pain relief as measured by ED‐NRS (p ≤ 0.002). However, mean charge per second differed across frequencies, with 1 kHz SCS requiring 60–70% less charge than higher frequencies (p ≤ 0.0002). Conclusions The PROCO RCT provides Level I evidence for equivalent pain relief from 1 to 10 kHz with appropriate titration of pulse width and amplitude. 1 kHz required significantly less charge than higher frequencies. PMID:29220121

Optically activated switches for the generation of complex electrical waveforms with multigigahertz bandwidth

NASA Astrophysics Data System (ADS)

Skeldon, Mark D.; Okishev, Andrey V.; Letzring, Samuel A.; Donaldson, William R.; Green, Kenton; Seka, Wolf D.; Fuller, Lynn F.

1995-01-01

An electrical pulse-generation system using two optically activated Si photoconductive switches can generate shaped electrical pulses with multigigahertz bandwidth. The Si switches are activated by an optical pulse whose leading edge is steepened by stimulated Brillouin scattering (SBS) in CCl4. With the bandwidth generated by the SBS process, a laser having a 1- to 3-ns pulse width is used to generate electrical pulses with approximately 80-ps rise times (approximately 4-GHz bandwidth). Variable impedance microstrip lines are used to generate complex electrical waveforms that can be transferred to a matched load with minimal loss of bandwidth.

Universal Barenco quantum gates via a tunable noncollinear interaction

NASA Astrophysics Data System (ADS)

Shi, Xiao-Feng

2018-03-01

The Barenco gate (B ) is a type of two-qubit quantum gate based on which alone universal quantum computation can be achieved. Each B is characterized by three angles (α , θ , and ϕ ), though it works in a two-qubit Hilbert space. Here we design B via a noncollinear interaction V | r1r2>< r1r3|+H .c . , where | ri> is a state that can be excited from a qubit state and V is adjustable. We present two protocols for B . The first (second) protocol consists of two (six) pulses and one (two) wait period(s), where the former causes rotations between qubit states and excited states, and the latter induces gate transformation via the noncollinear interaction. In the first protocol, the variable ϕ can be tuned by varying the phases of external controls, and the other two variables α and θ , tunable via adjustment of the wait duration, have a linear dependence on each other. Meanwhile, the first protocol can give rise to cnot and controlled-y gates. In the second protocol, α ,θ , and ϕ can be varied by changing the interaction amplitudes and wait durations, and the latter two are dependent on α nonlinearly. Both protocols can also lead to another universal gate when {α ,ϕ }={1 /4 ,1 /2 }π with appropriate parameters. Implementation of these universal gates is analyzed based on the van der Waals interaction of neutral Rydberg atoms.

Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength

NASA Astrophysics Data System (ADS)

Ni, Kai; Sternberg, Andrew L.; Zhang, En Xia; Kozub, John A.; Jiang, Rong; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M.; Alles, Michael L.; McMorrow, Dale; Lin, Jianqiang; Vardi, Alon; del Alamo, Jesús

2017-08-01

A tunable wavelength laser system and high-resolution transient capture system are introduced to characterize transients in high-mobility MOSFETs. The experimental configuration enables resolution of fast transient signals and new understanding of charge collection mechanisms. The channel layer is critical in the charge collection process for the InGaAs FinFETs examined here. The transient current mainly comes from the channel current, due to shunt effects and parasitic bipolar effects, instead of the junction collection. The charge amplification factor is found to be as high as 14, which makes this technology relatively sensitive to transient radiation. The peak current is inversely proportional to the device gate length. Simulations show that the parasitic bipolar effect is due to source-to-channel barrier lowering caused by hole accumulation in the source and channel. Charge deposited in the channel causes prompt current, while charge deposited below the channel causes delayed and slow current.

Charged Residues at the First Transmembrane Region Contribute to the Voltage Dependence of the Slow Gate of Connexins.

PubMed

Pinto, Bernardo I; García, Isaac E; Pupo, Amaury; Retamal, Mauricio A; Martínez, Agustín D; Latorre, Ramón; González, Carlos

2016-07-22

Connexins (Cxs) are a family of membrane-spanning proteins that form gap junction channels and hemichannels. Connexin-based channels exhibit two distinct voltage-dependent gating mechanisms termed slow and fast gating. Residues located at the C terminus of the first transmembrane segment (TM-1) are important structural components of the slow gate. Here, we determined the role of the charged residues at the end of TM-1 in voltage sensing in Cx26, Cx46, and Cx50. Conductance/voltage curves obtained from tail currents together with kinetics analysis reveal that the fast and slow gates of Cx26 involves the movement of two and four charges across the electric field, respectively. Primary sequence alignment of different Cxs shows the presence of well conserved glutamate residues in the C terminus of TM-1; only Cx26 contains a lysine in that position (lysine 41). Neutralization of lysine 41 in Cx26 increases the voltage dependence of the slow gate. Swapping of lysine 41 with glutamate 42 maintains the voltage dependence. In Cx46, neutralization of negative charges or addition of a positive charge in the Cx26 equivalent region reduced the slow gate voltage dependence. In Cx50, the addition of a glutamate in the same region decreased the voltage dependence, and the neutralization of a negative charge increased it. These results indicate that the charges at the end of TM-1 are part of the slow gate voltage sensor in Cxs. The fact that Cx42, which has no charge in this region, still presents voltage-dependent slow gating suggests that charges still unidentified also contribute to the slow gate voltage sensitivity. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

Charged Residues at the First Transmembrane Region Contribute to the Voltage Dependence of the Slow Gate of Connexins*

PubMed Central

Pinto, Bernardo I.; García, Isaac E.; Pupo, Amaury; Retamal, Mauricio A.; Martínez, Agustín D.; Latorre, Ramón; González, Carlos

2016-01-01

Connexins (Cxs) are a family of membrane-spanning proteins that form gap junction channels and hemichannels. Connexin-based channels exhibit two distinct voltage-dependent gating mechanisms termed slow and fast gating. Residues located at the C terminus of the first transmembrane segment (TM-1) are important structural components of the slow gate. Here, we determined the role of the charged residues at the end of TM-1 in voltage sensing in Cx26, Cx46, and Cx50. Conductance/voltage curves obtained from tail currents together with kinetics analysis reveal that the fast and slow gates of Cx26 involves the movement of two and four charges across the electric field, respectively. Primary sequence alignment of different Cxs shows the presence of well conserved glutamate residues in the C terminus of TM-1; only Cx26 contains a lysine in that position (lysine 41). Neutralization of lysine 41 in Cx26 increases the voltage dependence of the slow gate. Swapping of lysine 41 with glutamate 42 maintains the voltage dependence. In Cx46, neutralization of negative charges or addition of a positive charge in the Cx26 equivalent region reduced the slow gate voltage dependence. In Cx50, the addition of a glutamate in the same region decreased the voltage dependence, and the neutralization of a negative charge increased it. These results indicate that the charges at the end of TM-1 are part of the slow gate voltage sensor in Cxs. The fact that Cx42, which has no charge in this region, still presents voltage-dependent slow gating suggests that charges still unidentified also contribute to the slow gate voltage sensitivity. PMID:27143357

Noise filtering of composite pulses for singlet-triplet qubits

NASA Astrophysics Data System (ADS)

Wang, Xin; Yang, Xu-Chen

Dynamically corrected gates are useful measures to combat decoherence in spin qubit systems. They are, however, mostly designed assuming the static-noise model and may thus be considered low-frequency noise filters. In this talk we carefully examine the applicability of a particular type of dynamically corrected gates, namely the supcode designed for singlet-triplet qubits, under realistic 1 /fα noises. Through randomized benchmarking, we have found that supcode offers improvement of the gate fidelity for α > 1 and the improvement becomes exponentially more pronounced with the increase of the noise exponent α up to 3. On the other hand, for small α supcode will not offer any improvement. We also present the computed filter transfer functions for the supcode gates for nuclear and charge noise respectively and have found that they are consistent with the finding from the benchmarking. The work is supported by Grants from City University of Hong Kong (Projects No. 9610335 and No. 7200456).

CNOT sequences for heterogeneous spin qubit architectures in a noisy environment

NASA Astrophysics Data System (ADS)

Ferraro, Elena; Fanciulli, Marco; de Michielis, Marco

Explicit CNOT gate sequences for two-qubits mixed architectures are presented in view of applications for large-scale quantum computation. Different kinds of coded spin qubits are combined allowing indeed the favorable physical properties of each to be employed. The building blocks for such composite systems are qubit architectures based on the electronic spin in electrostatically defined semiconductor quantum dots. They are the single quantum dot spin qubit, the double quantum dot singlet-triplet qubit and the double quantum dot hybrid qubit. The effective Hamiltonian models expressed by only exchange interactions between pair of electrons are exploited in different geometrical configurations. A numerical genetic algorithm that takes into account the realistic physical parameters involved is adopted. Gate operations are addressed by modulating the tunneling barriers and the energy offsets between different couple of quantum dots. Gate infidelities are calculated considering limitations due to unideal control of gate sequence pulses, hyperfine interaction and unwanted charge coupling. Second affiliation: Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Via R. Cozzi, 55, 20126 Milano, Italy.

Rectification of graphene self-switching diodes: First-principles study

NASA Astrophysics Data System (ADS)

Ghaziasadi, Hassan; Jamasb, Shahriar; Nayebi, Payman; Fouladian, Majid

2018-05-01

The first principles calculations based on self-consistent charge density functional tight-binding have performed to investigate the electrical properties and rectification behavior of the graphene self-switching diodes (GSSD). The devices contained two structures called CG-GSSD and DG-GSSD which have metallic or semiconductor gates depending on their side gates have a single or double hydrogen edge functionalized. We have relaxed the devices and calculated I-V curves, transmission spectrums and maximum rectification ratios. We found that the DG-MSM devices are more favorable and more stable. Also, the DG-MSM devices have better maximum rectification ratios and current. Moreover, by changing the side gates widths and behaviors from semiconductor to metal, the threshold voltages under forward bias changed from +1.2 V to +0.3 V. Also, the maximum currents are obtained from 1.12 μA to 10.50 μA. Finally, the MSM and SSS type of all devices have minimum and maximum values of voltage threshold and maximum rectification ratios, but the 769-DG devices don't obey this rule.

Chaos Through-Wall Imaging Radar

NASA Astrophysics Data System (ADS)

Xu, Hang; Wang, Bingjie; Zhang, Jianguo; Liu, Li; Li, Ying; Wang, Yuncai; Wang, Anbang

2017-12-01

We experimentally demonstrate a chaos through-wall imaging radar using ultra-wideband chaotic-pulse-position modulation (CPPM) microwave signal. The CPPM signal based on logistic map with 1-ns pulse width and 1-GHz bandwidth is implemented by a field programmable gate array (FPGA) and then up-converted as the radar transmitting signal. Two-dimensional image of human objects behind obstacles is obtained by correlation method and back projection algorithm. Our experiments successfully perform through-wall imaging for single and multiple human objects through 20-cm thick wall. The down-range resolution of the proposed radar is 15 cm. Furthermore, the anti-jamming properties of the proposed radar in CPPM jamming, linear frequency-modulated jamming, and Gaussian noise jamming environments are demonstrated by electromagnetic simulations using the finite-difference time-domain. The simulation results show the CPPM microwave signal possesses excellent jamming immunity to the noise and radio frequency interference, which makes it perform superbly in multiradar environments.

Distance Determination by Gated Viewing Systems Taking into Account the Illuminating Pulse Shape

NASA Astrophysics Data System (ADS)

Gorobets, V. A.; Kuntsevich, B. F.; Shabrov, D. V.

2017-11-01

For gated viewing systems with triangular and trapezoidal illuminating pulses, we have obtained the range-intensity profiles (RIPs) of the signal as the time delay was varied between the leading edges of the gate pulse and the illuminating pulse. We have established that if the duration of the illuminating pulse Δtlas is less than or equal to the duration of the gate pulse ΔtIC, then the expressions for the characteristic distances are the same as for rectangular pulses and they can be used to determine the distance to objects. When Δtlas > ΔtIC, in the case of triangular illuminating pulses the RIP is bell-shaped. For trapezoidal pulses, the RIP is bell-shaped with or without a plateau section. We propose an empirical method for determining the characteristic distances to the RIP maximum and the boundary points for the plateau section, which we then use to calculate the distance to the object. Using calibration constants, we propose a method for determining the distance to an object and we have experimentally confirmed the feasibility of this method.

Circuit model for single-energy-level trap centers in FETs

NASA Astrophysics Data System (ADS)

Albahrani, Sayed Ali; Parker, Anthony; Heimlich, Michael

2016-12-01

A circuit implementation of a single-energy-level trap center in an FET is presented. When included in transistor models it explains the temperature-potential-dependent time constants seen in the circuit manifestations of charge trapping, being gate lag and drain overshoot. The implementation is suitable for both time-domain and harmonic-balance simulations. The proposed model is based on the Shockley-Read-Hall (SRH) statistics of the trapping process. The results of isothermal pulse measurements performed on a GaN HEMT are presented. These measurement allow characterizing charge trapping in isolation from the effect of self-heating. These results are used to obtain the parameters of the proposed model.

1/f noise in metallic and semiconducting carbon nanotubes

NASA Astrophysics Data System (ADS)

Reza, Shahed; Huynh, Quyen T.; Bosman, Gijs; Sippel-Oakley, Jennifer; Rinzler, Andrew G.

2006-11-01

The charge transport and noise properties of three terminal, gated devices containing multiple single-wall metallic and semiconducting carbon nanotubes were measured at room temperature. Applying a high voltage pulsed bias at the drain terminal the metallic tubes were ablated sequentially, enabling the separation of measured conductance and 1/f noise into metallic and semiconducting nanotube contributions. The relative low frequency excess noise of the metallic tubes was observed to be two orders of magnitude lower than that of the semiconductor tubes.

The 1.06 micrometer avalanche photodiode detectors with integrated circuit preamplifiers

NASA Technical Reports Server (NTRS)

Eden, R. C.

1975-01-01

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction 3-5 semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors.

Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 μm

NASA Astrophysics Data System (ADS)

Ohnuma, Hidetoshi; Kawahira, Hiroichi

1998-09-01

An automatic alternative phase shift mask (PSM) pattern layout tool has been newly developed. This tool is dedicated for embedded DRAM in logic device to shrink gate line width with improving line width controllability in lithography process with a design rule below 0.18 micrometers by the KrF excimer laser exposure. The tool can crete Levenson type PSM used being coupled with a binary mask adopting a double exposure method for positive photo resist. By using graphs, this tool automatically creates alternative PSM patterns. Moreover, it does not give any phase conflicts. By adopting it to actual embedded DRAM in logic cells, we have provided 0.16 micrometers gate resist patterns at both random logic and DRAM areas. The patterns were fabricated using two masks with the double exposure method. Gate line width has been well controlled under a practical exposure-focus window.

Qubit lattice coherence induced by electromagnetic pulses in superconducting metamaterials

PubMed Central

Ivić, Z.; Lazarides, N.; Tsironis, G. P.

2016-01-01

Quantum bits (qubits) are at the heart of quantum information processing schemes. Currently, solid-state qubits, and in particular the superconducting ones, seem to satisfy the requirements for being the building blocks of viable quantum computers, since they exhibit relatively long coherence times, extremely low dissipation, and scalability. The possibility of achieving quantum coherence in macroscopic circuits comprising Josephson junctions, envisioned by Legett in the 1980’s, was demonstrated for the first time in a charge qubit; since then, the exploitation of macroscopic quantum effects in low-capacitance Josephson junction circuits allowed for the realization of several kinds of superconducting qubits. Furthermore, coupling between qubits has been successfully achieved that was followed by the construction of multiple-qubit logic gates and the implementation of several algorithms. Here it is demonstrated that induced qubit lattice coherence as well as two remarkable quantum coherent optical phenomena, i.e., self-induced transparency and Dicke-type superradiance, may occur during light-pulse propagation in quantum metamaterials comprising superconducting charge qubits. The generated qubit lattice pulse forms a compound ”quantum breather” that propagates in synchrony with the electromagnetic pulse. The experimental confirmation of such effects in superconducting quantum metamaterials may open a new pathway to potentially powerful quantum computing. PMID:27403780

Qubit lattice coherence induced by electromagnetic pulses in superconducting metamaterials

NASA Astrophysics Data System (ADS)

Ivić, Z.; Lazarides, N.; Tsironis, G. P.

2016-07-01

Quantum bits (qubits) are at the heart of quantum information processing schemes. Currently, solid-state qubits, and in particular the superconducting ones, seem to satisfy the requirements for being the building blocks of viable quantum computers, since they exhibit relatively long coherence times, extremely low dissipation, and scalability. The possibility of achieving quantum coherence in macroscopic circuits comprising Josephson junctions, envisioned by Legett in the 1980’s, was demonstrated for the first time in a charge qubit; since then, the exploitation of macroscopic quantum effects in low-capacitance Josephson junction circuits allowed for the realization of several kinds of superconducting qubits. Furthermore, coupling between qubits has been successfully achieved that was followed by the construction of multiple-qubit logic gates and the implementation of several algorithms. Here it is demonstrated that induced qubit lattice coherence as well as two remarkable quantum coherent optical phenomena, i.e., self-induced transparency and Dicke-type superradiance, may occur during light-pulse propagation in quantum metamaterials comprising superconducting charge qubits. The generated qubit lattice pulse forms a compound ”quantum breather” that propagates in synchrony with the electromagnetic pulse. The experimental confirmation of such effects in superconducting quantum metamaterials may open a new pathway to potentially powerful quantum computing.

Investigation of a single barrier discharge in submillimeter air gaps. Nonuniform field

NASA Astrophysics Data System (ADS)

Bondarenko, P. N.; Emel'yanov, O. A.; Shemet, M. V.

2014-08-01

Pulse characteristics of single barrier discharges as well as parameters of charges accumulated on the surface of a dielectric under the atmospheric pressure in the "needle-(0.1-2.0)-mm air gap-polymer barrier-plane" system are investigated. It is found experimentally that for the positive polarity of the needle, the voltage for the discharge initiation is higher than in the case of the negative polarity by ˜25-35%. The reversal of the needle polarity from negative to positive increases the amplitude of the discharge current and the accumulated surface charge by ˜1.5-3 times. For the positive polarity of the needle, the discharge is governed by a streamer mechanism, while for the negative polarity, the discharge is initiated by the formation of a single Trichel pulse. The single pulse regime is observed for the discharge current up to a certain electrode gap d CR. For the positive needle and for air gap width d air > d CR ≈ 1.5 mm, a multipulse burst corona is formed, while for the negative needle and d air > d CR ≈ 0.9 mm, a damped sequence of Trichel pulses evolves in the system.

Voyager Uranus encounter 0.2lbf T/VA short pulse test report

NASA Technical Reports Server (NTRS)

1986-01-01

The attitude control thrusters on the Voyager spacecraft were tested for operation at electrical pulse widths of less than the current 10-millisecond minimum to reduce impulse bit and, therefore, reduce image smear of pictures taken during the Uranus encounter. Thrusters with the identical configuration of the units on the spacecraft were fired in an altitude chamber to characterize impulse bit and impulse bit variations as a function of electrical pulse widths and to determine if the short pulses decreased thruster life. Pulse widths of 4.0 milliseconds provide approximately 45 percent of the impulse provided by a 10-ms pulse, and thruster-to-thruster and pulse-to-pulse variation is approximately plus or minus 10 percent. Pulse widths shorter than 4 ms showed wide variation, and no pulse was obtained at 3 ms. Three thrusters were each subjected to 75,000 short pulses of 4 ms or less without performance degradation. A fourth thruster exhibited partial flow blockage after 13,000 short pulses, but this was attributed to prevous test history and not short pulse exposure. The Voyager attitude control thrusters should be considered flight qualified for short pulse operation at pulse widths of 4.0 ms or more.

Current-voltage characteristics influenced by the nanochannel diameter and surface charge density in a fluidic field-effect-transistor.

PubMed

Singh, Kunwar Pal; Guo, Chunlei

2017-06-21

The nanochannel diameter and surface charge density have a significant impact on current-voltage characteristics in a nanofluidic transistor. We have simulated the effect of the channel diameter and surface charge density on current-voltage characteristics of a fluidic nanochannel with positive surface charge on its walls and a gate electrode on its surface. Anion depletion/enrichment leads to a decrease/increase in ion current with gate potential. The ion current tends to increase linearly with gate potential for narrow channels at high surface charge densities and narrow channels are more effective to control the ion current at high surface charge densities. The current-voltage characteristics are highly nonlinear for wide channels at low surface charge densities and they show different regions of current change with gate potential. The ion current decreases with gate potential after attaining a peak value for wide channels at low values of surface charge densities. At low surface charge densities, the ion current can be controlled by a narrow range of gate potentials for wide channels. The current change with source drain voltage shows ohmic, limiting and overlimiting regions.

Echo characteristics of two salmon species

NASA Astrophysics Data System (ADS)

Nealson, Patrick A.; Horne, John K.; Burwen, Debby L.

2005-04-01

The Alaska Department of Fish and Game relies on split-beam hydroacoustic techniques to estimate Chinook salmon (Oncorhynchus tshawytscha) returns to the Kenai River. Chinook counts are periodically confounded by large numbers of smaller sockeye salmon (O. nerka). Echo target-strength has been used to distinguish fish length classes, but was too variable to separate Kenai River chinook and sockeye distributions. To evaluate the efficacy of alternate echo metrics, controlled acoustic measurements of tethered chinook and sockeye salmon were collected at 200 kHz. Echo returns were digitally sampled at 48 kHz. A suite of descriptive metrics were collected from a series of 1,000 echoes per fish. Measurements of echo width were least variable at the -3 dB power point. Initial results show echo elongation and ping-to-ping variability in echo envelope width were significantly greater for chinook than for sockeye salmon. Chinook were also observed to return multiple discrete peaks from a single broadcast echo. These characteristics were attributed to the physical width of chinook exceeding half of the broadcast echo pulse width at certain orientations. Echo phase variability, correlation coefficient and fractal dimension distributions did not demonstrate significant discriminatory power between the two species. [Work supported by ADF&G, ONR.

Measurement of the Spin Relaxation Lifetime (T 1) in a One-Electron Strained-Si Accumulation-Mode Quantum Dot

NASA Astrophysics Data System (ADS)

Croke, Edward; Borselli, Matthew; Kiselev, Andrey; Deelman, Peter; Milosavljevic, Ivan; Alvarado-Rodriguez, Ivan; Ross, Richard; Schmitz, Adele; Gyure, Mark; Hunter, Andrew

2011-03-01

We report measurements of the spin-relaxation lifetime (T1) as a function of magnetic field in a strained-Si, accumulation-mode quantum dot. An integrated quantum-point contact (QPC) charge sensor was used to detect changes in dot occupancy as a function of bias applied to a single gate electrode. The addition spectra we obtained are consistent with theoretical predictions starting at N=0. The conductance of the charge sensor was measured by applying an AC voltage across the QPC and a 3 k Ω resistor. Lifetime measurements were conducted using a three-pulse technique consisting of a load, read, and flush sequence. T1 was measured by observing the decay of the spin bump amplitude as a function of the load pulse length. We measured decay times ranging from approximately 75 msec at 2T to 12 msec at 3T, consistent with previous reports and theoretical predictions. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.

An all-solid-state microsecond-range quasi-square pulse generator based on fractional-turn ratio saturable pulse transformer and anti-resonance network.

PubMed

Chen, Rong; Yang, Jianhua; Cheng, Xinbing; Pan, Zilong

2017-03-01

High voltage pulse generators are widely applied in a number of fields. Defense and industrial applications stimulated intense interests in the area of pulsed power technology towards the system with high power, high repetition rate, solid state characteristics, and compact structure. An all-solid-state microsecond-range quasi-square pulse generator based on a fractional-turn ratio saturable pulse transformer and anti-resonance network is proposed in this paper. This generator consists of a charging system, a step-up system, and a modulating system. In this generator, the fractional-turn ratio saturable pulse transformer is the key component since it acts as a step-up transformer and a main switch during the working process. Demonstrative experiments show that if the primary storage capacitors are charged to 400 V, a quasi-square pulse with amplitude of about 29 kV can be achieved on a 3500 Ω resistive load, as well as the pulse duration (full width at half maximum) of about 1.3 μs. Preliminary repetition rate experiments are also carried out, which indicate that this pulse generator could work stably with the repetition rates of 30 Hz and 50 Hz. It can be concluded that this kind of all-solid-state microsecond-range quasi-square pulse generator can not only lower both the operating voltage of the primary windings and the saturable inductance of the secondary windings, thus ideally realizing the magnetic switch function of the fractional-turn ratio saturable pulse transformer, but also achieve a quasi-square pulse with high quality and fixed flat top after the modulation of a two-section anti-resonance network. This generator can be applied in areas of large power microwave sources, sterilization, disinfection, and wastewater treatment.

Design of Solar Street Lamp Control System Based on MPPT

NASA Astrophysics Data System (ADS)

Cui, Fengying

This paper proposes a new solar street lamp control system which is composed of photovoltaic cell, controller, battery and load. In this system controller as the key part applies the microchip to achieve many functions. According to the nonlinear output characteristics of solar cell and the influence of environment, it uses the perturbation and observation (P&O) method to realize the maximum power point tracking (MPPT) and promotes the efficiency. In order to prolong the battery life the pulse width modulation (PWM) charge mode is selected to control the battery capacity and provent the battery from the state of over-charge and over-discharge. Meanwhile the function of temperature compensation, charge and discharge protection are set to improve the running safety and stability.

Effect of electrode design on crosstalk between neighboring organic field-effect transistors based on one single crystal

NASA Astrophysics Data System (ADS)

Li, Mengjie; Tang, Qingxin; Tong, Yanhong; Zhao, Xiaoli; Zhou, Shujun; Liu, Yichun

2018-03-01

The design of high-integration organic circuits must be such that the interference between neighboring devices is eliminated. Here, rubrene crystals were used to study the effect of the electrode design on crosstalk between neighboring organic field-effect transistors (OFETs). Results show that a decreased source/drain interval and gate electrode width can decrease the diffraction distance of the current, and therefore can weaken the crosstalk. In addition, the inherent low carrier concentration in organic semiconductors can create a high-resistance barrier at the space between gate electrodes of neighboring devices, limiting or even eliminating the crosstalk as a result of the gate electrode width being smaller than the source/drain electrode width.

Time stretch dispersive Fourier transform based single-shot pulse-by-pulse spectrum measurement using a pulse-repetition-frequency-variable gain-switched laser

NASA Astrophysics Data System (ADS)

Furukawa, Hideaki; Makino, Takeshi; Wang, Xiaomin; Kobayashi, Tetsuya; Asghari, Mohammad H.; Trinh, Paul; Jalali, Bahram; Man, Wai Sing; Tsang, Kwong Shing; Wada, Naoya

2018-02-01

The time stretch dispersive Fourier Transform (TS-DFT) technique based on a fiber chromatic dispersion is a powerful tool for pulse-by-pulse single-shot spectrum measurement for highrepetition rate optical pulses. The distributed feedback laser diode (DFB-LD) with the gain switch operation can flexibly change the pulse repetition frequency (PRF). In this paper, we newly introduce a semiconductor gain-switched DFB-LD operating from 1 MHz up to 1 GHz PRF into the TS-DFT based spectrum measurement system to improve the flexibility and the operability. The pulse width can be below 2 ps with a pulse compression technique. We successfully measure the spectrum of each optical pulse at 1 GHz, 100 MHz, and 10 MHz PRF, and demonstrate the flexibility of the measurement system.

High-Frequency (1 kHz) Spinal Cord Stimulation-Is Pulse Shape Crucial for the Efficacy? A Pilot Study.

PubMed

Song, Zhiyang; Meyerson, Björn A; Linderoth, Bengt

2015-12-01

Conflicting data regarding the efficacy of high-frequency spinal cord stimulation (HF SCS) has prompted the issue of the possible importance of the shape of the stimulating pulses. The aim of this pilot study was to compare HF SCS applied with monophasic and biphasic pulses of two different durations with conventional SCS in a rat model of neuropathic pain. Rats were operated with lesions of sciatic nerve branches according to the spared nerve injury procedure (SNI). Animals, which developed pathological tactile hypersensitivity after surgery, were implanted with four-polar miniature SCS leads. SCS was applied during 60 min with either conventional current parameters (monophasic pulse width [PW]: 200 μsec; 50 Hz and amplitude 80% of the motor threshold [MT]), or with high-frequency SCS (1 kHz) with monophasic or biphasic pulses, the latter with pulse widths of either 24 (12 + 12) or 48 (24 + 24) μsec. The outcomes were examined regarding change of tactile hypersensitivity during the one-hour SCS period and with two tests of thermal sensitivity. Conventional monophasic SCS, as well as HF SCS applied with monophasic PW = 24 μsec or with biphasic PW = 48 (24 + 24) μsec, had similar suppressive effects on tactile hypersensitivity. Solely, HF SCS applied with biphasic pulses with a total PW of 24 (12 + 12) μsec demonstrated no effect. Thermal hypersensitivity was unaffected by HF SCS with all pulse varieties. There is no significant difference in efficacy between HF SCS applied with low amplitude ("subparesthetic") monophasic and biphasic pulses. However, short PWs providing only 12 μsec of cathodal stimulation was ineffective, presumably because of insufficient electric charge transfer from the lead contacts to the nervous tissue. © 2015 International Neuromodulation Society.

Generation of flash x-rays using a mercury-anode radiation tube

NASA Astrophysics Data System (ADS)

Oizumi, Teiji; Sato, Eiichi; Sagae, Michiaki; Hayasi, Yasuomi; Tamakawa, Yoshiharu; Yanagisawa, Toru

1993-02-01

The constructions and the radiographic characteristics of a flash x-ray generator having a liquid-anode radiation tube are described. This generator consisted of the following essential components: a high-voltage power supply, a combined ceramic condenser of 10.7 nF, an oil- diffusion pump, an oil circulator, a trigger device, and a flash x-ray tube. The x-ray tube was of a triode and was composed of the following major devices: a mercury anode, a rod-shaped graphite cathode, a trigger electrode made from a copper wire, an x-ray window made from a polyethyleneterephthalate film, and a glass tube body. The ceramic condenser was charged from 40 to 60 kV by a power supply, and the electric charges in the condenser were discharged to the x-ray tube after the triggering. The maximum tube voltage was equivalent to the initial charged voltage of the condenser, and the tube current was less than 0.7 kA. The pulse widths of the flash x rays had values of about 1 microsecond(s) , and the time-integrated x-ray intensity was about 2.4 (mu) C/kg at 0.26 m per pulse with a charged voltage of 60 kV.

Irradiation of materials with short, intense ion pulses at NDCX-II

DOE PAGES

Seidl, P. A.; Barnard, J. J.; Feinberg, E.; ...

2017-05-31

Abstract We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and report on recent target experiments on beam-driven melting and transmission ion energy loss measurements with nanosecond and millimeter-scale ion beam pulses and thin tin foils. Bunches with around 10 11ions, 1 mm radius, and 2–30 ns full width at half maximum duration have been created with corresponding fluences in the range of 0.1–0.7 J/cm 2. To achieve these short pulse durations and mm-scale focal spot radii, the 1.1 MeV [megaelectronvolt (10 6eV)] He +ion beam is neutralized in a driftmore » compression section, which removes the space charge defocusing effect during final compression and focusing. The beam space charge and drift compression techniques resemble necessary beam conditions and manipulations in heavy ion inertial fusion accelerators. Quantitative comparison of detailed particle-in-cell simulations with the experiment plays an important role in optimizing accelerator performance.« less

Irradiation of materials with short, intense ion pulses at NDCX-II

DOE PAGES

Seidl, P. A.; Barnard, J. J.; Feinberg, E.; ...

2017-05-31

Here, we present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and report on recent target experiments on beam-driven melting and transmission ion energy loss measurements with nanosecond and millimeter-scale ion beam pulses and thin tin foils. Bunches with around 10 11 ions, 1 mm radius, and 2–30 ns full width at half maximum duration have been created with corresponding fluences in the range of 0.1–0.7 J/cm 2. To achieve these short pulse durations and mm-scale focal spot radii, the 1.1 MeV [megaelectronvolt (10 6 eV)] He + ion beam is neutralizedmore » in a drift compression section, which removes the space charge defocusing effect during final compression and focusing. The beam space charge and drift compression techniques resemble necessary beam conditions and manipulations in heavy ion inertial fusion accelerators. In conclusion, quantitative comparison of detailed particle-in-cell simulations with the experiment plays an important role in optimizing accelerator performance« less

Irradiation of materials with short, intense ion pulses at NDCX-II

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seidl, P. A.; Barnard, J. J.; Feinberg, E.

Abstract We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and report on recent target experiments on beam-driven melting and transmission ion energy loss measurements with nanosecond and millimeter-scale ion beam pulses and thin tin foils. Bunches with around 10 11ions, 1 mm radius, and 2–30 ns full width at half maximum duration have been created with corresponding fluences in the range of 0.1–0.7 J/cm 2. To achieve these short pulse durations and mm-scale focal spot radii, the 1.1 MeV [megaelectronvolt (10 6eV)] He +ion beam is neutralized in a driftmore » compression section, which removes the space charge defocusing effect during final compression and focusing. The beam space charge and drift compression techniques resemble necessary beam conditions and manipulations in heavy ion inertial fusion accelerators. Quantitative comparison of detailed particle-in-cell simulations with the experiment plays an important role in optimizing accelerator performance.« less

System and Method for Scan Range Gating

NASA Technical Reports Server (NTRS)

Lindemann, Scott (Inventor); Zuk, David M. (Inventor)

2017-01-01

A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.

Auxiliary quasi-resonant dc tank electrical power converter

DOEpatents

Peng, Fang Z.

2006-10-24

An auxiliary quasi-resonant dc tank (AQRDCT) power converter with fast current charging, voltage balancing (or charging), and voltage clamping circuits is provided for achieving soft-switched power conversion. The present invention is an improvement of the invention taught in U.S. Pat. No. 6,111,770, herein incorporated by reference. The present invention provides faster current charging to the resonant inductor, thus minimizing delay time of the pulse width modulation (PWM) due to the soft-switching process. The new AQRDCT converter includes three tank capacitors or power supplies to achieve the faster current charging and minimize the soft-switching time delay. The new AQRDCT converter further includes a voltage balancing circuit to charge and discharge the three tank capacitors so that additional isolated power supplies from the utility line are not needed. A voltage clamping circuit is also included for clamping voltage surge due to the reverse recovery of diodes.

Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

NASA Astrophysics Data System (ADS)

Zhu, Wencong

Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because of its shorter channel length and wider width, however, it also exhibit higher gate leakage current (>10-7 A) than side channel (<10-7 A) due to larger Ga ion implantation and diffusion region in SiO2 after annealing. Hysteresis window increase and positive VON shift were also observed due to the interface trap density increase and carrier density suppression both by Ga ions. Laser interference lithography was applied to define the IGZO active region, which gives more flexibility on TFT channel dimension and circuit modification. He-Cd laser with 325 nm wavelength was used to define 2D array of IGZO islands with period of 2.5 im. Logic gate array was designed and fabricated by combining this 2D array of IGZO islands and FIB direct channel milling. After annealing, device shows on-off feature, but high temperature (400 °C) release more free carrier and results in negative shift of VON. The row selection voltage was also introduced in the design of logic gate array to act as switch of input signals to each row separately. However, due to the long input signal sweeping time, the leakage current cannot be overlooked. The idea can be verified by AC or short pulse input signal.

Wide-field time-resolved luminescence imaging and spectroscopy to decipher obliterated documents in forensic science

NASA Astrophysics Data System (ADS)

Suzuki, Mototsugu; Akiba, Norimitsu; Kurosawa, Kenji; Kuroki, Kenro; Akao, Yoshinori; Higashikawa, Yoshiyasu

2016-01-01

We applied a wide-field time-resolved luminescence (TRL) method with a pulsed laser and a gated intensified charge coupled device (ICCD) for deciphering obliterated documents for use in forensic science. The TRL method can nondestructively measure the dynamics of luminescence, including fluorescence and phosphorescence lifetimes, which prove to be useful parameters for image detection. First, we measured the TRL spectra of four brands of black porous-tip pen inks on paper to estimate their luminescence lifetimes. Next, we acquired the TRL images of 12 obliterated documents at various delay times and gate times of the ICCD. The obliterated contents were revealed in the TRL images because of the difference in the luminescence lifetimes of the inks. This method requires no pretreatment, is nondestructive, and has the advantage of wide-field imaging, which makes it is easy to control the gate timing. This demonstration proves that TRL imaging and spectroscopy are powerful tools for forensic document examination.

Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

DOE PAGES

Kawakami, Erika; Jullien, Thibaut; Scarlino, Pasquale; ...

2016-10-03

The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of ~99% using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in the substrate. The coherence time measured using dynamical decoupling extends up to ~400 μs for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limitedmore » by noise in the 10-kHz to 1-MHz range, possibly because charge noise affects the spin via the micromagnet gradient. Furthermore, this work shows that an electron spin in an Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.« less

Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawakami, Erika; Jullien, Thibaut; Scarlino, Pasquale

The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of ~99% using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in the substrate. The coherence time measured using dynamical decoupling extends up to ~400 μs for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limitedmore » by noise in the 10-kHz to 1-MHz range, possibly because charge noise affects the spin via the micromagnet gradient. Furthermore, this work shows that an electron spin in an Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.« less

Study on high power ultraviolet laser oil detection system

NASA Astrophysics Data System (ADS)

Jin, Qi; Cui, Zihao; Bi, Zongjie; Zhang, Yanchao; Tian, Zhaoshuo; Fu, Shiyou

2018-03-01

Laser Induce Fluorescence (LIF) is a widely used new telemetry technology. It obtains information about oil spill and oil film thickness by analyzing the characteristics of stimulated fluorescence and has an important application in the field of rapid analysis of water composition. A set of LIF detection system for marine oil pollution is designed in this paper, which uses 355nm high-energy pulsed laser as the excitation light source. A high-sensitivity image intensifier is used in the detector. The upper machine sends a digital signal through a serial port to achieve nanoseconds range-gated width control for image intensifier. The target fluorescence spectrum image is displayed on the image intensifier by adjusting the delay time and the width of the pulse signal. The spectral image is coupled to CCD by lens imaging to achieve spectral display and data analysis function by computer. The system is used to detect the surface of the floating oil film in the distance of 25m to obtain the fluorescence spectra of different oil products respectively. The fluorescence spectra of oil products are obvious. The experimental results show that the system can realize high-precision long-range fluorescence detection and reflect the fluorescence characteristics of the target accurately, with broad application prospects in marine oil pollution identification and oil film thickness detection.

Phonoconductivity measurements of the electron-phonon interaction in quantum wire structures

NASA Astrophysics Data System (ADS)

Naylor, A. J.; Strickland, K. R.; Kent, A. J.; Henini, M.

1996-07-01

We have used a phonoconductivity technique to investigate the electron-phonon interaction in quantum wires. This interaction has important consequences for certain aspects of device behaviour. The 10 μm long wires were formed in GaAs/AlGaAs heterojunctions using split-gates. Ballistic phonon pulses, with an approximately Planckian frequency spectrum, were generated by a resistive film heater on the opposite side of the substrate. The interaction of the phonons with the quantum wire was detected via changes in conductance of the device. Oscillations in the phonoconductivity were observed with increasing (negative) gate bias. These oscillations were related to the Fermi level position relative to the one-dimensional subband structure which was determined from electrical transport measurements. We give a qualitative explanation of the results in terms of phonon induced inter- and intra- 1D subband electronic transitions leading to changes in the electron temperature which in turn affect the conductance. From our results we obtain a value for the effective width of the quantum wire.

Hitomi X-ray studies of giant radio pulses from the Crab pulsar

NASA Astrophysics Data System (ADS)

Hitomi Collaboration; Aharonian, Felix; Akamatsu, Hiroki; Akimoto, Fumie; Allen, Steven W.; Angelini, Lorella; Audard, Marc; Awaki, Hisamitsu; Axelsson, Magnus; Bamba, Aya; Bautz, Marshall W.; Blandford, Roger; Brenneman, Laura W.; Brown, Gregory V.; Bulbul, Esra; Cackett, Edward M.; Chernyakova, Maria; Chiao, Meng P.; Coppi, Paolo S.; Costantini, Elisa; de Plaa, Jelle; de Vries, Cor P.; den Herder, Jan-Willem; Done, Chris; Dotani, Tadayasu; Ebisawa, Ken; Eckart, Megan E.; Enoto, Teruaki; Ezoe, Yuichiro; Fabian, Andrew C.; Ferrigno, Carlo; Foster, Adam R.; Fujimoto, Ryuichi; Fukazawa, Yasushi; Furuzawa, Akihiro; Galeazzi, Massimiliano; Gallo, Luigi C.; Gandhi, Poshak; Giustini, Margherita; Goldwurm, Andrea; Gu, Liyi; Guainazzi, Matteo; Haba, Yoshito; Hagino, Kouichi; Hamaguchi, Kenji; Harrus, Ilana M.; Hatsukade, Isamu; Hayashi, Katsuhiro; Hayashi, Takayuki; Hayashida, Kiyoshi; Hiraga, Junko S.; Hornschemeier, Ann; Hoshino, Akio; Hughes, John P.; Ichinohe, Yuto; Iizuka, Ryo; Inoue, Hajime; Inoue, Yoshiyuki; Ishida, Manabu; Ishikawa, Kumi; Ishisaki, Yoshitaka; Iwai, Masachika; Kaastra, Jelle; Kallman, Tim; Kamae, Tsuneyoshi; Kataoka, Jun; Katsuda, Satoru; Kawai, Nobuyuki; Kelley, Richard L.; Kilbourne, Caroline A.; Kitaguchi, Takao; Kitamoto, Shunji; Kitayama, Tetsu; Kohmura, Takayoshi; Kokubun, Motohide; Koyama, Katsuji; Koyama, Shu; Kretschmar, Peter; Krimm, Hans A.; Kubota, Aya; Kunieda, Hideyo; Laurent, Philippe; Lee, Shiu-Hang; Leutenegger, Maurice A.; Limousin, Olivier O.; Loewenstein, Michael; Long, Knox S.; Lumb, David; Madejski, Greg; Maeda, Yoshitomo; Maier, Daniel; Makishima, Kazuo; Markevitch, Maxim; Matsumoto, Hironori; Matsushita, Kyoko; McCammon, Dan; McNamara, Brian R.; Mehdipour, Missagh; Miller, Eric D.; Miller, Jon M.; Mineshige, Shin; Mitsuda, Kazuhisa; Mitsuishi, Ikuyuki; Miyazawa, Takuya; Mizuno, Tsunefumi; Mori, Hideyuki; Mori, Koji; Mukai, Koji; Murakami, Hiroshi; Mushotzky, Richard F.; Nakagawa, Takao; Nakajima, Hiroshi; Nakamori, Takeshi; Nakashima, Shinya; Nakazawa, Kazuhiro; Nobukawa, Kumiko K.; Nobukawa, Masayoshi; Noda, Hirofumi; Odaka, Hirokazu; Ohashi, Takaya; Ohno, Masanori; Okajima, Takashi; Oshimizu, Kenya; Ota, Naomi; Ozaki, Masanobu; Paerels, Frits; Paltani, Stéphane; Petre, Robert; Pinto, Ciro; Porter, Frederick S.; Pottschmidt, Katja; Reynolds, Christopher S.; Safi-Harb, Samar; Saito, Shinya; Sakai, Kazuhiro; Sasaki, Toru; Sato, Goro; Sato, Kosuke; Sato, Rie; Sawada, Makoto; Schartel, Norbert; Serlemtsos, Peter J.; Seta, Hiromi; Shidatsu, Megumi; Simionescu, Aurora; Smith, Randall K.; Soong, Yang; Stawarz, Łukasz; Sugawara, Yasuharu; Sugita, Satoshi; Szymkowiak, Andrew; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shiníchiro; Takei, Yoh; Tamagawa, Toru; Tamura, Takayuki; Tanaka, Takaaki; Tanaka, Yasuo; Tanaka, Yasuyuki T.; Tashiro, Makoto S.; Tawara, Yuzuru; Terada, Yukikatsu; Terashima, Yuichi; Tombesi, Francesco; Tomida, Hiroshi; Tsuboi, Yohko; Tsujimoto, Masahiro; Tsunemi, Hiroshi; Tsuru, Takeshi Go; Uchida, Hiroyuki; Uchiyama, Hideki; Uchiyama, Yasunobu; Ueda, Shutaro; Ueda, Yoshihiro; Uno, Shiníchiro; Urry, C. Megan; Ursino, Eugenio; Watanabe, Shin; Werner, Norbert; Wilkins, Dan R.; Williams, Brian J.; Yamada, Shinya; Yamaguchi, Hiroya; Yamaoka, Kazutaka; Yamasaki, Noriko Y.; Yamauchi, Makoto; Yamauchi, Shigeo; Yaqoob, Tahir; Yatsu, Yoichi; Yonetoku, Daisuke; Zhuravleva, Irina; Zoghbi, Abderahmen; Terasawa, Toshio; Sekido, Mamoru; Takefuji, Kazuhiro; Kawai, Eiji; Misawa, Hiroaki; Tsuchiya, Fuminori; Yamazaki, Ryo; Kobayashi, Eiji; Kisaka, Shota; Aoki, Takahiro

2018-03-01

To search for giant X-ray pulses correlated with the giant radio pulses (GRPs) from the Crab pulsar, we performed a simultaneous observation of the Crab pulsar with the X-ray satellite Hitomi in the 2-300 keV band and the Kashima NICT radio telescope in the 1.4-1.7 GHz band with a net exposure of about 2 ks on 2016 March 25, just before the loss of the Hitomi mission. The timing performance of the Hitomi instruments was confirmed to meet the timing requirement and about 1000 and 100 GRPs were simultaneously observed at the main pulse and inter-pulse phases, respectively, and we found no apparent correlation between the giant radio pulses and the X-ray emission in either the main pulse or inter-pulse phase. All variations are within the 2 σ fluctuations of the X-ray fluxes at the pulse peaks, and the 3 σ upper limits of variations of main pulse or inter-pulse GRPs are 22% or 80% of the peak flux in a 0.20 phase width, respectively, in the 2-300 keV band. The values for main pulse or inter-pulse GRPs become 25% or 110%, respectively, when the phase width is restricted to the 0.03 phase. Among the upper limits from the Hitomi satellite, those in the 4.5-10 keV and 70-300 keV bands are obtained for the first time, and those in other bands are consistent with previous reports. Numerically, the upper limits of the main pulse and inter-pulse GRPs in the 0.20 phase width are about (2.4 and 9.3) × 10-11 erg cm-2, respectively. No significant variability in pulse profiles implies that the GRPs originated from a local place within the magnetosphere. Although the number of photon-emitting particles should temporarily increase to account for the brightening of the radio emission, the results do not statistically rule out variations correlated with the GRPs, because the possible X-ray enhancement may appear due to a >0.02% brightening of the pulse-peak flux under such conditions.

Enhancing the gate fidelity of silicon-based singlet-triplet qubits under symmetric exchange control using optimized pulse sequences

NASA Astrophysics Data System (ADS)

Zhang, Chengxian; Throckmorton, Robert; Yang, Xu-Chen; Wang, Xin; Barnes, Edwin

We perform Randomized Benchmarking of a family of recently introduced control scheme for singlet-triplet qubits in semiconductor double quantum dots, which is optimized to have substantially shorter gate times. We study their performances under the recently introduced symmetric control scheme of changing the exchange interaction by raising and lowering the barrier between the two dots (barrier control) and compare these results to those under the traditional tilt control method in which the exchange interaction is varied by detuning. It has been suggested that the barrier control method encounters a much smaller charge noise. We found that for the cases where the charge noise is dominant, corresponding to the device made on isotopically enriched silicon, the optimized sequences offer much longer coherence time under barrier control compared to the tilt control method of the strength of the exchange interaction. This work was supported by the Research Grants Council of Hong Kong SAR (No. CityU 21300116) and the National Natural Science Foundation of China (No. 11604277), and by LPS-MPO-CMTC.

Pulsed dynamical decoupling for fast and robust two-qubit gates on trapped ions

NASA Astrophysics Data System (ADS)

Arrazola, I.; Casanova, J.; Pedernales, J. S.; Wang, Z.-Y.; Solano, E.; Plenio, M. B.

2018-05-01

We propose a pulsed dynamical decoupling protocol as the generator of tunable, fast, and robust quantum phase gates between two microwave-driven trapped-ion hyperfine qubits. The protocol consists of sequences of π pulses acting on ions that are oriented along an externally applied magnetic-field gradient. In contrast to existing approaches, in our design the two vibrational modes of the ion chain cooperate under the influence of the external microwave driving to achieve significantly increased gate speeds. Our scheme is robust against the dominant noise sources, which are errors on the magnetic-field and microwave pulse intensities, as well as motional heating, predicting two-qubit gates with fidelities above 99.9% in tens of microseconds.

A new model for volume recombination in plane-parallel chambers in pulsed fields of high dose-per-pulse

NASA Astrophysics Data System (ADS)

Gotz, M.; Karsch, L.; Pawelke, J.

2017-11-01

In order to describe the volume recombination in a pulsed radiation field of high dose-per-pulse this study presents a numerical solution of a 1D transport model of the liberated charges in a plane-parallel ionization chamber. In addition, measurements were performed on an Advanced Markus ionization chamber in a pulsed electron beam to obtain suitable data to test the calculation. The experiment used radiation pulses of 4 μs duration and variable dose-per-pulse values up to about 1 Gy, as well as pulses of variable duration up to 308 μs at constant dose-per-pulse values between 85 mGy and 400 mGy. Those experimental data were compared to the developed numerical model and existing descriptions of volume recombination. At low collection voltages the observed dose-per-pulse dependence of volume recombination can be approximated by the existing theory using effective parameters. However, at high collection voltages large discrepancies are observed. The developed numerical model shows much better agreement with the observations and is able to replicate the observed behavior over the entire range of dose-per-pulse values and collection voltages. Using the developed numerical model, the differences between observation and existing theory are shown to be the result of a large fraction of the charge being collected as free electrons and the resultant distortion of the electric field inside the chamber. Furthermore, the numerical solution is able to calculate recombination losses for arbitrary pulse durations in good agreement with the experimental data, an aspect not covered by current theory. Overall, the presented numerical solution of the charge transport model should provide a more flexible tool to describe volume recombination for high dose-per-pulse values as well as for arbitrary pulse durations and repetition rates.

A new model for volume recombination in plane-parallel chambers in pulsed fields of high dose-per-pulse.

PubMed

Gotz, M; Karsch, L; Pawelke, J

2017-11-01

In order to describe the volume recombination in a pulsed radiation field of high dose-per-pulse this study presents a numerical solution of a 1D transport model of the liberated charges in a plane-parallel ionization chamber. In addition, measurements were performed on an Advanced Markus ionization chamber in a pulsed electron beam to obtain suitable data to test the calculation. The experiment used radiation pulses of 4 μs duration and variable dose-per-pulse values up to about 1 Gy, as well as pulses of variable duration up to 308 [Formula: see text] at constant dose-per-pulse values between 85 mGy and 400 mGy. Those experimental data were compared to the developed numerical model and existing descriptions of volume recombination. At low collection voltages the observed dose-per-pulse dependence of volume recombination can be approximated by the existing theory using effective parameters. However, at high collection voltages large discrepancies are observed. The developed numerical model shows much better agreement with the observations and is able to replicate the observed behavior over the entire range of dose-per-pulse values and collection voltages. Using the developed numerical model, the differences between observation and existing theory are shown to be the result of a large fraction of the charge being collected as free electrons and the resultant distortion of the electric field inside the chamber. Furthermore, the numerical solution is able to calculate recombination losses for arbitrary pulse durations in good agreement with the experimental data, an aspect not covered by current theory. Overall, the presented numerical solution of the charge transport model should provide a more flexible tool to describe volume recombination for high dose-per-pulse values as well as for arbitrary pulse durations and repetition rates.

Laser ion source with solenoid field

NASA Astrophysics Data System (ADS)

Kanesue, Takeshi; Fuwa, Yasuhiro; Kondo, Kotaro; Okamura, Masahiro

2014-11-01

Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. The laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 1011, which was provided by a single 1 J Nd-YAG laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.

Pulse switching for high energy lasers

NASA Technical Reports Server (NTRS)

Laudenslager, J. B.; Pacala, T. J. (Inventor)

1981-01-01

A saturable inductor switch for compressing the width and sharpening the rise time of high voltage pulses from a relatively slow rise time, high voltage generator to an electric discharge gas laser (EDGL) also provides a capability for efficient energy transfer from a high impedance primary source to an intermediate low impedance laser discharge network. The switch is positioned with respect to a capacitive storage device, such as a coaxial cable, so that when a charge build-up in the storage device reaches a predetermined level, saturation of the switch inductor releases or switches energy stored in the capactive storage device to the EDGL. Cascaded saturable inductor switches for providing output pulses having rise times of less than ten nanoseconds and a technique for magnetically biasing the saturable inductor switch are disclosed.

Control of laser pulse waveform in longitudinally excited CO2 laser by adjustment of excitation circuit

NASA Astrophysics Data System (ADS)

Uno, Kazuyuki; Jitsuno, Takahisa

2018-05-01

In a longitudinally excited CO2 laser that had a 45 cm-long discharge tube with a 1:1:2 mixture of CO2/N2/He gas at a pressure of 3.0 kPa, we realized the generation of a short laser pulse with a spike pulse width of about 200 ns and a pulse tail length of several tens of microseconds, control of the energy ratio of the spike pulse part to the pulse tail part in the short laser pulse, the generation of a long laser pulse with a pulse width of several tens of microseconds, and control of the pulse width in the long laser pulse, by using four types of excitation circuits in which the capacitance was adjusted. In the short laser pulse, the energy ratio was in the range 1:14-1:112. In the long laser pulse, the pulse width was in the range 25.7-82.7 μs.

Pulse transmission transmitter including a higher order time derivate filter

DOEpatents

Dress, Jr., William B.; Smith, Stephen F.

2003-09-23

Systems and methods for pulse-transmission low-power communication modes are disclosed. A pulse transmission transmitter includes: a clock; a pseudorandom polynomial generator coupled to the clock, the pseudorandom polynomial generator having a polynomial load input; an exclusive-OR gate coupled to the pseudorandom polynomial generator, the exclusive-OR gate having a serial data input; a programmable delay circuit coupled to both the clock and the exclusive-OR gate; a pulse generator coupled to the programmable delay circuit; and a higher order time derivative filter coupled to the pulse generator. The systems and methods significantly reduce lower-frequency emissions from pulse transmission spread-spectrum communication modes, which reduces potentially harmful interference to existing radio frequency services and users and also simultaneously permit transmission of multiple data bits by utilizing specific pulse shapes.

Multi-level Capacitive Memory Effect in Metal/Oxide/Floating-Schottky Junction

NASA Astrophysics Data System (ADS)

Choi, Gahyun; Jung, Sungchul; Yoon, Hoon Hahn; Jeon, Youngeun; Park*, Kibog

2015-03-01

A memory computing (memcomputing) system can store and process information at the same physical location simultaneously. The essential components of memcomputing are passive devices with memory functionality, such as memristor, memcapacitor, and meminductor. We report the realization of a Schottky contact memcapacitor compatible with the current Si CMOS technology. Our memcapacitor is formed by depositing a stack of metal and oxide thin films on top of a Schottky contact. Here, the metal electrode of the Schottky contact is floating. The working principle of our memcapacitor is based on the fact that the depletion width of the Schottky contact varies according to the amount of charge stored in the floating metal electrode. The voltage pulse applied across the Metal/Oxide/Floating-Schottky junction controls charge flow in the Schottky contact and determines the amount of charge stored eventually. It is demonstrated experimentally that our memcapacitor exhibits hysteresis behaviors in capacitance-voltage curves and possesses multiple capacitance values that are switchable by the applied voltage pulse. Supported by NRF in South Korea (2013R1A1A2007070).

Rapid Two-Millisecond Interrogation of Electrochemical, Aptamer-Based Sensor Response Using Intermittent Pulse Amperometry.

PubMed

Santos-Cancel, Mirelis; Lazenby, Robert A; White, Ryan J

2018-06-22

In this manuscript, we employ the technique intermittent pulse amperometry (IPA) to interrogate equilibrium and kinetic target binding to the surface of electrochemical, aptamer-based (E-AB) sensors, achieving as fast as 2 ms time resolution. E-AB sensors comprise an electrode surface modified with a flexible nucleic acid aptamer tethered at the 3'-terminus with a redox-active molecule. The introduction of a target changes the conformation and flexibility of the nucleic acid, which alters the charge transfer rate of the appended redox molecule. Typically, changes in charge transfer rate within this class of sensor are monitored via voltammetric methods. Here, we demonstrate that the use of IPA enables the detection of changes in charge transfer rates (i.e., current) at times <100 μs after the application of a potential pulse. Changes in sensor current are quantitatively related to target analyte concentration and can be used to create binding isotherms. Furthermore, the application of IPA enables rapid probing of the electrochemical surface with a time resolution equivalent to as low as twice the applied potential pulse width, not previously demonstrated with traditional voltammetric techniques employed with E-AB sensors (alternating current, square wave, cyclic). To visualize binding, we developed false-color plots analogous to those used in the field of fast-scan cyclic voltammetry. The use of IPA is universal, as demonstrated with two representative small molecule E-AB sensors directed against the aminoglycoside antibiotic tobramycin and adenosine triphosphate (ATP). Intermittent pulse amperometry exhibits an unprecedented sub-microsecond temporal response and is a general method for measuring rapid sensor performance.

RISE TIME DELAY DISCRIMINATOR

DOEpatents

Johnstone, C.W.

1959-09-29

A pulse-height discriminator for generating an output pulse when the accepted input pulse is approximately at its maximum value is described. A gating tube and a negative bias generator responsive to the derivative of the input pulse and means for impressing the output of the bias generator to at least one control electrode of the gating tube are included.

A review of ultrabrief pulse width electroconvulsive therapy

PubMed Central

Katalinic, Natalie; Martin, Donel; Schweitzer, Isaac

2012-01-01

The effect of shortening the pulse width of the electrical stimulus when administering electroconvulsive therapy (ECT) has recently been systematically studied with promising results. This review examines reported outcomes from three randomized controlled trials which compared ultrabrief (≤0.3 ms) with brief (0.5–1.5 ms) pulse width ECT, and other recent clinical trials of ultrabrief pulse width ECT. The emerging evidence for ultrabrief pulse right unilateral (RUL) ECT suggests clinically meaningful efficacy and substantially reduced neuropsychological side effects compared with standard (brief) pulse ECT; this may represent a generational advance in the ECT technique. However, it is unclear if patients receiving ultrabrief pulse RUL ECT may have a slower speed of response and require additional treatments compared with brief pulse ECT. Therefore, until further data are available, clinicians may be well advised to use brief pulse ECT in situations requiring an urgent clinical response. The evidence base for ultrabrief bilateral ECT is limited, with findings that efficacy may be reduced compared with brief pulse width ECT. Thus ultrabrief bilateral ECT should not be used outside the research setting. PMID:23251770

Does the Variability of Evoked Tympanic Membrane Displacement Data (V m) Increase as the Magnitude of the Pulse Amplitude Increases?

PubMed

Sharif, Sammy J; Campbell-Bell, Cherith M; Bulters, Diederik O; Marchbanks, Robert J; Birch, Anthony A

2018-01-01

Evoked tympanic membrane displacement (TMD) measurements, quantified by V m , record small volume changes in the ear canal following stimulation of the acoustic reflex. V m shows a correlation with intracranial pressure (ICP) and has been proposed as an option to non-invasively measure ICP. The spontaneous pulsing of the tympanic membrane, driven by the cardiovascular pulse, may contaminate the recordings and contribute to high measurement variability in some subjects. This study hypothesised that the larger the spontaneous vascular pulse, the larger the variability in V m . Spontaneous and evoked TMD data from each ear in the sitting and supine position were recorded from 100 healthy volunteers using the MMS-14 CCFP analyser. ECG was also recorded to identify each heartbeat. Using bespoke software written in Matlab, spontaneous data were analysed to produce average pulse amplitude (PA) waveforms and evoked data were analysed to calculate average V m and its standard deviation. Averaged spontaneous PA was plotted against V m variability and Pearson's correlation coefficient was calculated to test for a significant linear relationship. There was a strong positive correlation between PA and V m variability in all conditions: left sitting, r = 0.758; left supine, r = 0.665; right sitting, r = 0.755; right supine, r = 0.513. All were significant at p < 0.001. This study shows that large V m variability is associated with a large spontaneous vascular pulse. This suggests that efforts to reduce vascular pulsing from recordings, either by a subtraction technique during post-processing or ECG-gating of the evoking stimulus, may improve reliability of the V m measurement.

X-rays only when you want them: optimized pump–probe experiments using pseudo-single-bunch operation

PubMed Central

Hertlein, M. P.; Scholl, A.; Cordones, A. A.; Lee, J. H.; Engelhorn, K.; Glover, T. E.; Barbrel, B.; Sun, C.; Steier, C.; Portmann, G.; Robin, D. S.

2015-01-01

Laser pump–X-ray probe experiments require control over the X-ray pulse pattern and timing. Here, the first use of pseudo-single-bunch mode at the Advanced Light Source in picosecond time-resolved X-ray absorption experiments on solutions and solids is reported. In this mode the X-ray repetition rate is fully adjustable from single shot to 500 kHz, allowing it to be matched to typical laser excitation pulse rates. Suppressing undesired X-ray pulses considerably reduces detector noise and improves signal to noise in time-resolved experiments. In addition, dose-induced sample damage is considerably reduced, easing experimental setup and allowing the investigation of less robust samples. Single-shot X-ray exposures of a streak camera detector using a conventional non-gated charge-coupled device (CCD) camera are also demonstrated. PMID:25931090

X-rays only when you want them: Optimized pump–probe experiments using pseudo-single-bunch operation

DOE PAGES

Hertlein, M. P.; Scholl, A.; Cordones, A. A.; ...

2015-04-02

Laser pump–X-ray probe experiments require control over the X-ray pulse pattern and timing. Here, the first use of pseudo-single-bunch mode at the Advanced Light Source in picosecond time-resolved X-ray absorption experiments on solutions and solids is reported. In this mode the X-ray repetition rate is fully adjustable from single shot to 500 kHz, allowing it to be matched to typical laser excitation pulse rates. Suppressing undesired X-ray pulses considerably reduces detector noise and improves signal to noise in time-resolved experiments. In addition, dose-induced sample damage is considerably reduced, easing experimental setup and allowing the investigation of less robust samples. Single-shotmore » X-ray exposures of a streak camera detector using a conventional non-gated charge-coupled device (CCD) camera are also demonstrated.« less

InGaAs/InP SPAD photon-counting module with auto-calibrated gate-width generation and remote control

NASA Astrophysics Data System (ADS)

Tosi, Alberto; Ruggeri, Alessandro; Bahgat Shehata, Andrea; Della Frera, Adriano; Scarcella, Carmelo; Tisa, Simone; Giudice, Andrea

2013-01-01

We present a photon-counting module based on InGaAs/InP SPAD (Single-Photon Avalanche Diode) for detecting single photons up to 1.7 μm. The module exploits a novel architecture for generating and calibrating the gate width, along with other functions (such as module supervision, counting and processing of detected photons, etc.). The gate width, i.e. the time interval when the SPAD is ON, is user-programmable in the range from 500 ps to 1.5 μs, by means of two different delay generation methods implemented with an FPGA (Field-Programmable Gate Array). In order to compensate chip-to-chip delay variation, an auto-calibration circuit picks out a combination of delays in order to match at best the selected gate width. The InGaAs/InP module accepts asynchronous and aperiodic signals and introduces very low timing jitter. Moreover the photon counting module provides other new features like a microprocessor for system supervision, a touch-screen for local user interface, and an Ethernet link for smart remote control. Thanks to the fullyprogrammable and configurable architecture, the overall instrument provides high system flexibility and can easily match all requirements set by many different applications requiring single photon-level sensitivity in the near infrared with very low photon timing jitter.

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

NASA Astrophysics Data System (ADS)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Brushless DC motor control system responsive to control signals generated by a computer or the like

NASA Technical Reports Server (NTRS)

Packard, D. T. (Inventor)

1985-01-01

A control system for a brushless DC motor responsive to digital control signals is disclosed. The motor includes a multiphase wound stator and a permanent magnet rotor. The motor is arranged so that each phase winding, when energized from a DC source, will drive the rotor through a predetermined angular position or step. A commutation signal generator responsive to the shaft position provides a commutation signal for each winding. A programmable control signal generator such as a computer or microprocessor produces individual digital control signals for each phase winding. The control signals and commutation signals associated with each winding are applied to an AND gate for that phase winding. Each gate controls a switch connected in series with the associated phase winding and the DC source so that each phase winding is energized only when the commutation signal and the control signal associated with that phase winding are present. The motor shaft may be advanced one step at a time to a desired position by applying a predetermined number of control signals in the proper sequence to the AND gates and the torque generated by the motor be regulated by applying a separate control signal and each AND gate which is pulse width modulated to control the total time that each switch connects its associated winding to the DC source during each commutation period.

Brushless DC motor control system responsive to control signals generated by a computer or the like

NASA Technical Reports Server (NTRS)

Packard, Douglas T. (Inventor); Schmitt, Donald E. (Inventor)

1987-01-01

A control system for a brushless DC motor responsive to digital control signals is disclosed. The motor includes a multiphase wound stator and a permanent magnet rotor. The rotor is arranged so that each phase winding, when energized from a DC source, will drive the rotor through a predetermined angular position or step. A commutation signal generator responsive to the shaft position provides a commutation signal for each winding. A programmable control signal generator such as a computer or microprocessor produces individual digital control signals for each phase winding. The control signals and commutation signals associated with each winding are applied to an AND gate for that phase winding. Each gate controls a switch connected in series with the associated phase winding and the DC source so that each phase winding is energized only when the commutation signal and the control signal associated with that phase winding are present. The motor shaft may be advanced one step at a time to a desired position by applying a predetermined number of control signals in the proper sequence to the AND gates and the torque generated by the motor may be regulated by applying a separate control signal to each AND gate which is pulse width modulated to control the total time that each switch connects its associated winding to the DC source during each commutation period.

Effect of laser pulse shaping parameters on the fidelity of quantum logic gates.

PubMed

Zaari, Ryan R; Brown, Alex

2012-09-14

The effect of varying parameters specific to laser pulse shaping instruments on resulting fidelities for the ACNOT(1), NOT(2), and Hadamard(2) quantum logic gates are studied for the diatomic molecule (12)C(16)O. These parameters include varying the frequency resolution, adjusting the number of frequency components and also varying the amplitude and phase at each frequency component. A time domain analytic form of the original discretized frequency domain laser pulse function is derived, providing a useful means to infer the resulting pulse shape through variations to the aforementioned parameters. We show that amplitude variation at each frequency component is a crucial requirement for optimal laser pulse shaping, whereas phase variation provides minimal contribution. We also show that high fidelity laser pulses are dependent upon the frequency resolution and increasing the number of frequency components provides only a small incremental improvement to quantum gate fidelity. Analysis through use of the pulse area theorem confirms the resulting population dynamics for one or two frequency high fidelity laser pulses and implies similar dynamics for more complex laser pulse shapes. The ability to produce high fidelity laser pulses that provide both population control and global phase alignment is attributed greatly to the natural evolution phase alignment of the qubits involved within the quantum logic gate operation.

Application of the Systems Impact Assessment Model (SIAM) to Fishery Resource Issues in the Klamath River, California

USGS Publications Warehouse

Campbell, Sharon G.; Bartholow, John M.; Heasley, John

2010-01-01

At the request of two offices of the U.S. Fish and Wildlife Service (FWS) located in Yreka and Arcata, Calif., we applied the Systems Impact Assessment Model (SIAM) to analyze a variety of water management concerns associated with the Federal Energy Regulatory Commission (FERC) relicensing of the Klamath hydropower projects or with ongoing management of anadromous fish stocks in the mainstem Klamath River, Oregon and California. Requested SIAM analyses include predicted effects of reservoir withdrawal elevations, use of full active storage in Copco and Iron Gate Reservoirs to augment spring flows, and predicted spawning and juvenile outmigration timing of fall Chinook salmon. In an effort to further refine the analysis of spring flow effects on predicted fall Chinook production, additional SIAM analyses were performed for predicted response to spring flow release variability from Iron Gate Dam, high and low pulse flow releases, the predicted effects of operational constraints for both Upper Klamath Lake water surface elevations, and projected flow releases specified in the Klamath Project 2006 Operations Plan (April 10, 2006). Results of SIAM simulations to determine flow and water temperature relationships indicate that up to 4 degrees C of thermal variability can be attributed to flow variations, but the effect is seasonal. Much more of thermal variability can be attributed to air temperature variations, up to 6 degrees C. Reservoirs affect the annual thermal signature by delaying spring warming by about 3 weeks and fall cooling by about 2 weeks. Multi-level release outlets on Iron Gate Dam would have limited utility; however, if releases are small (700 cfs) and a near-surface and bottom-level outlet could be blended, then water temperature may be reduced by 2-4 degrees C for a 4-week period during September. Using the full active storage in Copco and Iron Gate Reservoir, although feasible, had undesirable ramifications such as earlier spring warming, loss of hydropower production, and inability to re-fill the reservoirs without causing shortages elsewhere in the system. Altering spawning and outmigration timing may be important management objectives for the salmon fishery, but difficult to implement. SIAM predicted benefits that might occur if water temperature was cooler in fall and spring emergence was advanced; however, model simulations were based on purely arbitrary thermal reductions. Spring flow variability did indicate that juvenile fall Chinook rearing habitat was the major biological 'bottleneck' for year class success. Rearing habitat is maximal in a range between 4,500 and 5,500 cfs below Iron Gate Dam. These flow levels are not typically provided by Klamath River system operations, except in very wet years. The incremental spring flow analysis provided insight into when and how long a pulse flow should occur to provide predicted fall Chinook salmon production increases. In general, March 15th - April 30th of any year was the period for pulse flows and 4000 cfs was the target flow release that provided near-optimal juvenile rearing habitat. Again, competition for water resources in the Klamath River Basin may make implementation of pulsed flows difficult.

Charge Density Dependent Hole Mobility and Density of States Throughout the Entire Finite Potential Window of Conductivity in Ionic Liquid Gated Poly(3-hexylthiophene)

NASA Astrophysics Data System (ADS)

Paulsen, Bryan D.; Frisbie, C. Daniel

2012-02-01

Ionic liquids, used in place of traditional gate dielectric materials, allow for the accumulation of very high 2D and 3D charge densities (>10^14 #/cm^2 and >10^21 #/cm^3 respectively) at low voltage (<5 V). Here we study the electrochemical gating of the benchmark semiconducting polymer poly(3-hexylthiophene) (P3HT) with the ionic liquid 1-ethyl-3-methylimidazolium tris(pentafluoroethyl)trifluorophosphate ([EMI][FAP]). The electrochemical stability of [EMI][FAP] allowed the reproducible accumulation of 2 x 10^21 hole/cm^3, or one hole (and stabilizing anion dopant) per every two thiophene rings. A finite potential/charge density window of high electrical conductivity was observed with hole mobility reaching a maximum of 0.86 cm^2/V s at 0.12 holes per thiophene ring. Displacement current measurements, collected versus a calibrated reference electrode, allowed the mapping of the highly structured and extremely broad density of states of the P3HT/[EMI][FAP] doped composite. Variable temperature and charge density hole transport measurements revealed hole transport to be thermally activated and non-monotonic, displaying a activation energy minimum of ˜20 meV in the region of maximum conductivity and hole mobility. To show the generality of this result, the study was extended to an additional four ionic liquids and three semiconducting polymers.

Wavelength-dependence of double optical gating for attosecond pulse generation

NASA Astrophysics Data System (ADS)

Tian, Jia; Li, Min; Yu, Ji-Zhou; Deng, Yong-Kai; Liu, Yun-Quan

2014-10-01

Both polarization gating (PG) and double optical gating (DOG) are productive methods to generate single attosecond (as) pulses. In this paper, considering the ground-state depletion effect, we investigate the wavelength-dependence of the DOG method in order to optimize the generation of single attosecond pulses for the future application. By calculating the ionization probabilities of the leading edge of the pulse at different driving laser wavelengths, we obtain the upper limit of duration for the driving laser pulse for the DOG setup. We find that the upper limit duration increases with the increase of laser wavelength. We further describe the technical method of choosing and calculating the thickness values of optical components for the DOG setup.

Properties of M components from currents measured at triggered lightning channel base

NASA Astrophysics Data System (ADS)

Thottappillil, Rajeev; Goldberg, Jon D.; Rakov, Vladimir A.; Uman, Martin A.; Fisher, Richard J.; Schnetzer, George H.

1995-12-01

Channel base currents from triggered lightning were measured at the NASA Kennedy Space Center, Florida, during summer 1990 and at Fort McClellan, Alabama, during summer 1991. An analysis of the return stroke data and overall continuing current data has been published by Fisher et al. [1993]. Here an analysis is given of the impulsive processes, called M components, that occur during the continuing current following return strokes. The 14 flashes analyzed contain 37 leader-return stroke sequences and 158 M components, both processes lowering negative charge from cloud to ground. Statistics are presented for the following M current pulse parameters: magnitude, rise time, duration, half-peak width, preceding continuing current level, M interval, elapsed time since the return stroke, and charge transferred by the M current pulse. A typical M component in triggered lightning is characterized by a more or less symmetrical current pulse having an amplitude of 100-200 A (2 orders of magnitude lower than that for a typical return stroke [Fisher et al., 1993]), a 10-90% rise time of 300-500 μs (3 orders of magnitude larger than that for a typical return stroke [Fisher et al., 1993]), and a charge transfer to ground of the order of 0.1 to 0.2 C (1 order of magnitude smaller than that for a typical subsequent return stroke pulse [Berger et al., 1975]). About one third of M components transferred charge greater than the minimum charge reported by Berger et al. [1975] for subsequent leader-return stroke sequences. No correlation was found between either the M charge or the magnitude of the M component current (the two are moderately correlated) and any other parameter considered. M current pulses occurring soon after the return stroke tend to have shorter rise times, shorter durations, and shorter M intervals than those which occur later. M current pulses were observed to be superimposed on continuing currents greater than 30 A or so, with one exception out of 140 cases, wherein the continuing current level was measured to be about 20 A. The first M component virtually always (one exception out of 34 cases) occurred within 4 ms of the return stroke. This relatively short separation time between return stroke and the first M component, coupled with the observation of Fisher et al. [1993] that continuing currents lasting longer than 10 ms never occur without M current pulses, implies that the M component is a necessary feature of the continuing current mode of charge transfer to ground.

Conducted noise analysis and protection of 45 kJ/s, ±50 kV capacitor charging power supply when interfaced with repetitive Marx based pulse power system.

PubMed

Naresh, P; Patel, Ankur; Sharma, Archana

2015-09-01

Pulse power systems with highly dynamic loads like klystron, backward wave oscillator (BWO), and magnetron generate highly dynamic noise. This noise leads to frequent failure of controlled switches in the inverter stage of charging power supply. Designing a reliable and compatible power supply for pulse power applications is always a tricky job when charging rate is in multiples of 10 kJ/s. A ±50 kV and 45 kJ/s capacitor charging power supply based on 4th order LCLC resonant topology has been developed for a 10 Hz repetitive Marx based system. Conditions for load independent constant current and zero current switching (ZCS) are derived mathematically. Noise generated at load end due to dynamic load is tackled effectively and reduction in magnitude noise voltage is achieved by providing shielding between primary and secondary of high voltage high frequency transformer and with LCLC low pass filter. Shielding scales down the ratio between coupling capacitance (Cc) and the collector-emitter capacitance of insulated gate bi-polar transistor switch, which in turn reduces the common mode noise voltage magnitude. The proposed 4th order LCLC resonant network acts as a low pass filter for differential mode noise in the reverse direction (from load to source). Power supply has been tested repeatedly with 5 Hz repetition rate with repetitive Marx based system connected with BWO load working fine without failure of single switch in the inverter stage.

Conducted noise analysis and protection of 45 kJ/s, ±50 kV capacitor charging power supply when interfaced with repetitive Marx based pulse power system

NASA Astrophysics Data System (ADS)

Naresh, P.; Patel, Ankur; Sharma, Archana

2015-09-01

Pulse power systems with highly dynamic loads like klystron, backward wave oscillator (BWO), and magnetron generate highly dynamic noise. This noise leads to frequent failure of controlled switches in the inverter stage of charging power supply. Designing a reliable and compatible power supply for pulse power applications is always a tricky job when charging rate is in multiples of 10 kJ/s. A ±50 kV and 45 kJ/s capacitor charging power supply based on 4th order LCLC resonant topology has been developed for a 10 Hz repetitive Marx based system. Conditions for load independent constant current and zero current switching (ZCS) are derived mathematically. Noise generated at load end due to dynamic load is tackled effectively and reduction in magnitude noise voltage is achieved by providing shielding between primary and secondary of high voltage high frequency transformer and with LCLC low pass filter. Shielding scales down the ratio between coupling capacitance (Cc) and the collector-emitter capacitance of insulated gate bi-polar transistor switch, which in turn reduces the common mode noise voltage magnitude. The proposed 4th order LCLC resonant network acts as a low pass filter for differential mode noise in the reverse direction (from load to source). Power supply has been tested repeatedly with 5 Hz repetition rate with repetitive Marx based system connected with BWO load working fine without failure of single switch in the inverter stage.

Optical π phase shift created with a single-photon pulse.

PubMed

Tiarks, Daniel; Schmidt, Steffen; Rempe, Gerhard; Dürr, Stephan

2016-04-01

A deterministic photon-photon quantum logic gate is a long-standing goal. Building such a gate becomes possible if a light pulse containing only one photon imprints a phase shift of π onto another light field. We experimentally demonstrate the generation of such a π phase shift with a single-photon pulse. A first light pulse containing less than one photon on average is stored in an atomic gas. Rydberg blockade combined with electromagnetically induced transparency creates a phase shift for a second light pulse, which propagates through the medium. We measure the π phase shift of the second pulse when we postselect the data upon the detection of a retrieved photon from the first pulse. This demonstrates a crucial step toward a photon-photon gate and offers a variety of applications in the field of quantum information processing.

Surface characterization of carbon fiber reinforced polymers by picosecond laser induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

Ledesma, Rodolfo; Palmieri, Frank; Connell, John; Yost, William; Fitz-Gerald, James

2018-02-01

Adhesive bonding of composite materials requires reliable monitoring and detection of surface contaminants as part of a vigorous quality control process to assure robust and durable bonded structures. Surface treatment and effective monitoring prior to bonding are essential in order to obtain a surface which is free from contaminants that may lead to inferior bond quality. In this study, the focus is to advance the laser induced breakdown spectroscopy (LIBS) technique by using pulse energies below 100 μJ (μLIBS) for the detection of low levels of silicone contaminants in carbon fiber reinforced polymer (CFRP) composites. Various CFRP surface conditions were investigated by LIBS using ∼10 ps, 355 nm laser pulses with pulse energies below 30 μJ. Time-resolved analysis was conducted to optimize the gate delay and gate width for the detection of the C I emission line at 247.9 nm to monitor the epoxy resin matrix of CFRP composites and the Si I emission line at 288.2 nm for detection of silicone contaminants in CFRP. To study the surface sensitivity to silicone contamination, CFRP surfaces were coated with polydimethylsiloxane (PDMS), the active ingredient in many mold release agents. The presence of PDMS was studied by inspecting the Si I emission lines at 251.6 nm and 288.2 nm. The measured PDMS areal densities ranged from 0.15 to 2 μg/cm2. LIBS measurements were performed before and after laser surface ablation. The results demonstrate the successful detection of PDMS thin layers on CFRP using picosecond μLIBS.

Evaluation of the shock-wave pattern for endoscopic electrohydraulic lithotripsy.

PubMed

Vorreuther, R; Engelmann, Y

1995-01-01

We evaluated the electrical events and the resulting shock waves of the spark discharge for electrohydraulic lithotripsy at the tip of a 3.3F probe. Spark generation was achieved by variable combinations of voltage and capacity. The effective electrical output was determined by means of a high-voltage probe, a current coil, and a digital oscilloscope. Peak pressures, rise times, and pulse width of the pressure profiles were recorded using a polyvinylidene difluoride needle hydrophone in 0.9% NaCl solution at a distance of 10 mm. The peak pressure and the slope of the shock front depend solely on the voltage, while the pulse width was correlated with the capacity. Pulses of less than 1-microsecond duration can be obtained when low capacity is applied and the inductivity of the cables and plugs is kept at a low level. Using chalk as a stone model it was proven that short pulses of high peak pressure provided by a low capacity and a high voltage have a greater impact on fragmentation than the corresponding broader shock waves of lower peak pressure carrying the same energy.

Theoretical models for electron conduction in polymer systems—I. Macroscopic calculations of d.c. transient conductivity after pulse irradiation

NASA Astrophysics Data System (ADS)

Bartczak, Witold M.; Kroh, Jerzy

The simulation of the transient d.c. conductivity in a quasi one-dimensional system of charges produced by a pulse of ionizing radiation in a solid sample has been performed. The simulation is based on the macroscopic conductivity equations and can provide physical insight into d.c. conductivity measurements, particularly for the case of transient currents in samples with internal space charge. We consider the system of mobile (negative) and immobile (positive) charges produced by a pulse of ionizing radiation in the sample under a fixed external voltage V0. The presence of space charge results in an electric field which is a function of both the spatial and the time variable: E( z, t). Given the space charge density, the electric field can be calculated from the Poisson equation. However, for an arbitrary space charge distribution, the corresponding equations can only be solved numerically. The two non-trivial cases for which approximate analytical solutions can be provided are: (i) The density of the current carriers n( z, t) is negligible in comparison with the density of immobile space charge N( z). A general analytical solution has been found for this case using Green's functions. The solutions for two cases, viz. the homogeneous distribution of space charge N( z) = N, and the non-homogeneous exponential distribution N( z) = A exp(- Bz), have been separately discussed. (ii) The space charge created in the pulse without any space charge present prior to the irradiation.

Interferometry of Klein tunnelling electrons in graphene quantum rings

NASA Astrophysics Data System (ADS)

de Sousa, D. J. P.; Chaves, Andrey; Pereira, J. M.; Farias, G. A.

2017-01-01

We theoretically study a current switch that exploits the phase acquired by a charge carrier as it tunnels through a potential barrier in graphene. The system acts as an interferometer based on an armchair graphene quantum ring, where the phase difference between interfering electronic wave functions for each path can be controlled by tuning either the height or the width of a potential barrier in the ring arms. By varying the parameters of the potential barriers, the interference can become completely destructive. We demonstrate how this interference effect can be used for developing a simple graphene-based logic gate with a high on/off ratio.

Slow positron applications at slow positron facility of institute of materials structure science, KEK

NASA Astrophysics Data System (ADS)

Hyodo, Toshio; Mochizuki, Izumi; Wada, Ken; Toge, Nobukazu; Shidara, Tetsuo

2018-05-01

Slow Positron Facility at High Energy Accelerator Research Organization (KEK) is a user dedicated facility with an energy-tunable (0.1 - 35 keV) slow positron beam created by a dedicated ˜ 50 MeV linac. It operates in a short pulse (width 1-12 ns, variable, 5×106 e+/s) and a long pulse (width 1.2 µs, 5×107 e+/s) modes of 50 Hz. High energy positrons from pair creation are moderated by reemission after thermalization in W foils. The reemitted positrons are then electrostatically accelerated to a desired energy up to 35 keV and magnetically transported. A pulse-stretching section (pulse stretcher) is installed in the middle of the beamline. It stretches the slow positron pulse for the experiments where too many positrons annihilating in the sample at the same time has to be avoided. Four experiment stations for TRHEPD (total-reflection high-energy positron diffraction), LEPD (low-energy positron diffraction), Ps- (positronium negative ion), and Ps-TOF (positronium time-of-flight) experiments are connected to the beamline branches, SPF-A3, SPF-A4, SPF-B1 and SPF-B2, respectively. Recent results of these stations are briefly described.

Advanced Laser Technologies for High-brightness Photocathode Electron Gun

NASA Astrophysics Data System (ADS)

Tomizawa, Hiromitsu

A laser-excited photocathode RF gun is one of the most reliable high-brightness electron beam sources for XFELs. Several 3D laser shaping methods have been developed as ideal photocathode illumination sources at SPring-8 since 2001. To suppress the emittance growth caused by nonlinear space-charge forces, the 3D cylindrical UV-pulse was optimized spatially as a flattop and temporally as squarely stacked chirped pulses. This shaping system is a serial combination of a deformable mirror that adaptively shapes the spatial profile with a genetic algorithm and a UV-pulse stacker that consists of four birefringent α-BBO crystal rods for temporal shaping. Using this 3D-shaped pulse, a normalized emittance of 1.4 π mm mrad was obtained in 2006. Utilizing laser's Z-polarization, Schottky-effect-gated photocathode gun was proposed in 2006. The cathode work functions are reduced by a laser-induced Schottky effect. As a result of focusing a radially polarized laser pulse with a hollow lens in vacuum, the Z-field (Z-polarization) is generated at the cathode.

Hybrid circuit achieves pulse regeneration with low power drain

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Hybrid tunnel diode-transistor circuit provides a solid-state, low power drain pulse regenerator, frequency limiter, or gated oscillator. When the feedback voltage exceeds the input voltage, the circuit functions as a pulse normalizer or a frequency limiter. If the circuit is direct coupled, it functions as a gated oscillator.

Selection of optimal welding condition for GTA pulse welding in root-pass of V-groove butt joint

NASA Astrophysics Data System (ADS)

Yun, Seok-Chul; Kim, Jae-Woong

2010-12-01

In the manufacture of high-quality welds or pipeline, a full-penetration weld has to be made along the weld joint. Therefore, root-pass welding is very important, and its conditions have to be selected carefully. In this study, an experimental method for the selection of optimal welding conditions is proposed for gas tungsten arc (GTA) pulse welding in the root pass which is done along the V-grooved butt-weld joint. This method uses response surface analysis in which the width and height of back bead are chosen as quality variables of the weld. The overall desirability function, which is the combined desirability function for the two quality variables, is used as the objective function to obtain the optimal welding conditions. In our experiments, the target values of back bead width and height are 4 mm and zero, respectively, for a V-grooved butt-weld joint of a 7-mm-thick steel plate. The optimal welding conditions could determine the back bead profile (bead width and height) as 4.012 mm and 0.02 mm. From a series of welding tests, it was revealed that a uniform and full-penetration weld bead can be obtained by adopting the optimal welding conditions determined according to the proposed method.

TEMPORAL EVOLUTION OF THE VELA PULSAR’S PULSE PROFILE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palfreyman, J. L.; Dickey, J. M.; Ellingsen, S. P.

The mechanisms of emission and changes in rotation frequency (“glitching”) of the Vela pulsar (J0835−4510) are not well understood. Further insight into these mechanisms can be achieved by long-term studies of integrated pulse width, timing residuals, and bright-pulse rates. We have undertaken an intensive observing campaign of Vela and collected over 6000 hr of single-pulse data. The data shows that the pulse width changes with time, including marked jumps in width after micro-glitches (frequency changes). The abundance of bright pulses also changes after some micro-glitches, but not all. The secular changes in pulse width have three possible cyclic periods thatmore » match with X-ray periodicities of a helical jet that are interpreted as free precession.« less

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers.

PubMed

Chen, Shaoqiang; Diao, Shengxi; Li, Pengtao; Nakamura, Takahiro; Yoshita, Masahiro; Weng, Guoen; Hu, Xiaobo; Shi, Yanling; Liu, Yiqing; Akiyama, Hidefumi

2017-07-31

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8-1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

A compact 100 kV high voltage glycol capacitor.

PubMed

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

A 1.06 micrometer avalanche photodiode receiver

NASA Technical Reports Server (NTRS)

Eden, R. C.

1975-01-01

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

A gated Thomson parabola spectrometer for improved ion and neutral atom measurements in intense laser produced plasmas

NASA Astrophysics Data System (ADS)

Tata, Sheroy; Mondal, Angana; Sarkar, Soubhik; Lad, Amit D.; Krishnamurthy, M.

2017-08-01

Ions of high energy and high charge are accelerated from compact intense laser produced plasmas and are routinely analysed either by time of flight or Thomson parabola spectrometry. At the highest intensities where ion energies can be substantially large, both these techniques have limitations. Strong electromagnetic pulse noise jeopardises the arrival time measurement, and a bright central spot in the Thomson parabola spectrometer affects the signal to noise ratio of ion traces that approach close to the central spot. We present a gated Thomson parabola spectrometer that addresses these issues and provides an elegant method to improvise ion spectrometry. In addition, we demonstrate that this method provides the ability to detect and measure high energy neutral atoms that are invariably present in most intense laser plasma acceleration experiments.

A gated Thomson parabola spectrometer for improved ion and neutral atom measurements in intense laser produced plasmas.

PubMed

Tata, Sheroy; Mondal, Angana; Sarkar, Soubhik; Lad, Amit D; Krishnamurthy, M

2017-08-01

Ions of high energy and high charge are accelerated from compact intense laser produced plasmas and are routinely analysed either by time of flight or Thomson parabola spectrometry. At the highest intensities where ion energies can be substantially large, both these techniques have limitations. Strong electromagnetic pulse noise jeopardises the arrival time measurement, and a bright central spot in the Thomson parabola spectrometer affects the signal to noise ratio of ion traces that approach close to the central spot. We present a gated Thomson parabola spectrometer that addresses these issues and provides an elegant method to improvise ion spectrometry. In addition, we demonstrate that this method provides the ability to detect and measure high energy neutral atoms that are invariably present in most intense laser plasma acceleration experiments.

Short-pulse, compressed ion beams at the Neutralized Drift Compression Experiment

DOE PAGES

Seidl, P. A.; Barnard, J. J.; Davidson, R. C.; ...

2016-05-01

We have commenced experiments with intense short pulses of ion beams on the Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory, with 1-mm beam spot size within 2.5 ns full-width at half maximum. The ion kinetic energy is 1.2 MeV. To enable the short pulse duration and mm-scale focal spot radius, the beam is neutralized in a 1.5-meter-long drift compression section following the last accelerator cell. A short-focal-length solenoid focuses the beam in the presence of the volumetric plasma that is near the target. In the accelerator, the line-charge density increases due to the velocity ramp imparted onmore » the beam bunch. The scientific topics to be explored are warm dense matter, the dynamics of radiation damage in materials, and intense beam and beam-plasma physics including select topics of relevance to the development of heavy-ion drivers for inertial fusion energy. Below the transition to melting, the short beam pulses offer an opportunity to study the multi-scale dynamics of radiation-induced damage in materials with pump-probe experiments, and to stabilize novel metastable phases of materials when short-pulse heating is followed by rapid quenching. First experiments used a lithium ion source; a new plasma-based helium ion source shows much greater charge delivered to the target.« less

Experimental state control by fast non-Abelian holonomic gates with a superconducting qutrit

NASA Astrophysics Data System (ADS)

Danilin, S.; Vepsäläinen, A.; Paraoanu, G. S.

2018-05-01

Quantum state manipulation with gates based on geometric phases acquired during cyclic operations promises inherent fault-tolerance and resilience to local fluctuations in the control parameters. Here we create a general non-Abelian and non-adiabatic holonomic gate acting in the (∣0〉, ∣2〉) subspace of a three-level (qutrit) transmon device fabricated in a fully coplanar design. Experimentally, this is realized by simultaneously coupling the first two transitions by microwave pulses with amplitudes and phases defined such that the condition of parallel transport is fulfilled. We demonstrate the creation of arbitrary superpositions in this subspace by changing the amplitudes of the pulses and the relative phase between them. We use two-photon pulses acting in the holonomic subspace to reveal the coherence of the state created by the geometric gate pulses and to prepare different superposition states. We also test the action of holonomic NOT and Hadamard gates on superpositions in the (| 0> ,| 2> ) subspace.

A common pathway for charge transport through voltage-sensing domains.

PubMed

Chanda, Baron; Bezanilla, Francisco

2008-02-07

Voltage-gated ion channels derive their voltage sensitivity from the movement of specific charged residues in response to a change in transmembrane potential. Several studies on mechanisms of voltage sensing in ion channels support the idea that these gating charges move through a well-defined permeation pathway. This gating pathway in a voltage-gated ion channel can also be mutated to transport free cations, including protons. The recent discovery of proton channels with sequence homology to the voltage-sensing domains suggests that evolution has perhaps exploited the same gating pathway to generate a bona fide voltage-dependent proton transporter. Here we will discuss implications of these findings on the mechanisms underlying charge (and ion) transport by voltage-sensing domains.

Improving pH sensitivity by field-induced charge regulation in flexible biopolymer electrolyte gated oxide transistors

NASA Astrophysics Data System (ADS)

Liu, Ning; Gan, Lu; Liu, Yu; Gui, Weijun; Li, Wei; Zhang, Xiaohang

2017-10-01

Electrical manipulation of charged ions in electrolyte-gated transistors is crucial for enhancing the electric-double-layer (EDL) gating effect, thereby improving their sensing abilities. Here, indium-zinc-oxide (IZO) based thin-film-transistors (TFTs) are fabricated on flexible plastic substrate. Acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric, exhibiting an extremely high EDL capacitance. By regulating the dynamic EDL charging process with special gate potential profiles, the EDL gating effect of the chitosan-gated TFT is enhanced, and then resulting in higher pH sensitivities. An extremely high sensitivity of ∼57.8 mV/pH close to Nernst limit is achieved when the gate bias of the TFT sensor sweeps at a rate of 10 mV/s. Additionally, an enhanced sensitivity of 2630% in terms of current variation with pH range from 11 to 3 is realized when the device is operated in the ion depletion mode with a negative gate bias of -0.7 V. Robust ionic modulation is demonstrated in such chitosan-gated sensors. Efficiently driving the charged ions in the chitosan-gated IZO-TFT provides a new route for ultrasensitive, low voltage, and low-cost biochemical sensing technologies.

Well-behaved dynamics in a dissipative nonideal periodically kicked rotator.

PubMed

Chacón, R; Martínez García-Hoz, A

2003-12-01

Well-behaved dynamical properties are found in a dissipative kicked rotator subjected to a periodic string of asymmetric pulses of finite amplitude and width. The stability boundaries of the equilibrium are determined to arbitrary approximation for trigonometric pulses by means of circular harmonic balance, and to first approximation for general elliptic pulses by means of an elliptic harmonic balance method. The bifurcation behavior at the stability boundaries is determined numerically. We show how the extension of the instability region of the equilibrium in pulse parameter space reaches a maximum as the pulse width is varied. We also characterize the dependence of the mean duration of the transients to the equilibrium on the pulse width. The evolution of the basins of attraction of chaotic attractors when solely the pulse width is varied is characterized numerically. Finally, we show that the order-chaos route when solely the width of the pulses is altered appears to be especially rich, including different types of crises. The mechanism underlying these reshaping-induced crises is discussed with the aid of a two-dimensional map.

Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Hong; Du, Yuchen; Ye, Peide D., E-mail: yep@purdue.edu

2016-05-16

Herein, we report on achieving ultra-high electron density (exceeding 10{sup 14 }cm{sup −2}) in a GaN bulk material device by ionic liquid gating, through the application of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} to passivate the GaN surface. Output characteristics demonstrate a maximum drain current of 1.47 A/mm, the highest reported among all bulk GaN field-effect transistors, with an on/off ratio of 10{sup 5} at room temperature. An ultra-high electron density exceeding 10{sup 14 }cm{sup −2} accumulated at the surface is confirmed via Hall-effect measurement and transfer length measurement. In addition to the ultra-high electron density, we also observe a reductionmore » of the contact resistance due to the narrowing of the Schottky barrier width on the contacts. Taking advantage of the ALD surface passivation and ionic liquid gating technique, this work provides a route to study the field-effect and carrier transport properties of conventional semiconductors in unprecedented ultra-high charge density regions.« less

Laser ion source with solenoid field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanesue, Takeshi, E-mail: tkanesue@bnl.gov; Okamura, Masahiro; Fuwa, Yasuhiro

2014-11-10

Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. The laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 10{sup 11}, which was provided by a single 1 J Nd-YAGmore » laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.« less

Relativistic Electron Acceleration with Ultrashort Mid-IR Laser Pulses

NASA Astrophysics Data System (ADS)

Feder, Linus; Woodbury, Daniel; Shumakova, Valentina; Gollner, Claudia; Miao, Bo; Schwartz, Robert; Pugžlys, Audrius; Baltuška, Andrius; Milchberg, Howard

2017-10-01

We report the first results of laser plasma wakefield acceleration driven by ultrashort mid-infrared laser pulses (λ = 3.9 μm , pulsewidth 100 fs, energy <20 mJ, peak power <1 TW), which enables near- and above-critical density interactions with moderate-density gas jets. We present thresholds for electron acceleration based on critical parameters for relativistic self-focusing and target width, as well as trends in the accelerated beam profiles, charge and energy spectra which are supported by 3D particle-in-cell simulations. These results extend earlier work with sub-TW self-modulated laser wakefield acceleration using near IR drivers to the Mid-IR, and enable us to capture time-resolved images of relativistic self-focusing of the laser pulse. This work supported by DOE (DESC0010706TDD, DESC0015516); AFOSR(FA95501310044, FA95501610121); NSF(PHY1535519); DHS.

Formation of Amorphous Carbon Nanoparticles by the Laser Electrodispersion Method

NASA Astrophysics Data System (ADS)

Gurevich, S. A.; Gorokhov, M. V.; Kozhevin, V. M.; Kukushkin, M. V.; Levitskii, V. S.; Markov, L. K.; Yavsin, D. A.

2018-03-01

Experimental results on the laser ablation of the highly oriented pyrolytic graphite by using light pulses of an Nd:YAG laser (pulse width 25 ns, pulse energy 220 mJ) are presented. Analysis of the surface profile of the carbon target shows that the target material melts in the course of the laser ablation. As a result of ablation, a coating consisting of carbon nanoparticles about 10 nm in size is formed on the substrate placed at a distance of 4 cm from the target. It is assumed that such particles are formed as a result of the electrodispersion of carbon droplets detached from the target surface and charged to an unstable state in the laser plasma plume. Raman spectra of the coatings indicate that the carbon nanoparticles being formed have an amorphous structure.

Laser ion source with solenoid field

DOE PAGES

Kanesue, Takeshi; Fuwa, Yasuhiro; Kondo, Kotaro; ...

2014-11-12

Pulse length extension of highly charged ion beam generated from a laser ion source is experimentally demonstrated. In this study, the laser ion source (LIS) has been recognized as one of the most powerful heavy ion source. However, it was difficult to provide long pulse beams. By applying a solenoid field (90 mT, 1 m) at plasma drifting section, a pulse length of carbon ion beam reached 3.2 μs which was 4.4 times longer than the width from a conventional LIS. The particle number of carbon ions accelerated by a radio frequency quadrupole linear accelerator was 1.2 × 10 11,more » which was provided by a single 1 J Nd-YAG laser shot. A laser ion source with solenoid field could be used in a next generation heavy ion accelerator.« less

Voltage-dependent gating and gating charge measurements in the Kv1.2 potassium channel

PubMed Central

Ishida, Itzel G.; Rangel-Yescas, Gisela E.; Carrasco-Zanini, Julia

2015-01-01

Much has been learned about the voltage sensors of ion channels since the x-ray structure of the mammalian voltage-gated potassium channel Kv1.2 was published in 2005. High resolution structural data of a Kv channel enabled the structural interpretation of numerous electrophysiological findings collected in various ion channels, most notably Shaker, and permitted the development of meticulous computational simulations of the activation mechanism. The fundamental premise for the structural interpretation of functional measurements from Shaker is that this channel and Kv1.2 have the same characteristics, such that correlation of data from both channels would be a trivial task. We tested these assumptions by measuring Kv1.2 voltage-dependent gating and charge per channel. We found that the Kv1.2 gating charge is near 10 elementary charges (eo), ∼25% less than the well-established 13–14 eo in Shaker. Next, we neutralized positive residues in the Kv1.2 S4 transmembrane segment to investigate the cause of the reduction of the gating charge and found that, whereas replacing R1 with glutamine decreased voltage sensitivity to ∼50% of the wild-type channel value, mutation of the subsequent arginines had a much smaller effect. These data are in marked contrast to the effects of charge neutralization in Shaker, where removal of the first four basic residues reduces the gating charge by roughly the same amount. In light of these differences, we propose that the voltage-sensing domains (VSDs) of Kv1.2 and Shaker might undergo the same physical movement, but the septum that separates the aqueous crevices in the VSD of Kv1.2 might be thicker than Shaker’s, accounting for the smaller Kv1.2 gating charge. PMID:25779871

High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

PubMed Central

Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

2011-01-01

Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

Multiplexed charge-locking device for large arrays of quantum devices

NASA Astrophysics Data System (ADS)

Puddy, R. K.; Smith, L. W.; Al-Taie, H.; Chong, C. H.; Farrer, I.; Griffiths, J. P.; Ritchie, D. A.; Kelly, M. J.; Pepper, M.; Smith, C. G.

2015-10-01

We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.

Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

PubMed

Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

2018-02-19

The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

Ellipticity dependence of high harmonics generated using 400 nm driving lasers

NASA Astrophysics Data System (ADS)

Cheng, Yan; Khan, Sabih; Zhao, Kun; Zhao, Baozhen; Chini, Michael; Chang, Zenghu

2011-05-01

High order harmonics generated from 400 nm driving pulses hold promise of scaling photon flux of single attosecond pulses by one to two orders of magnitude. We report ellipticity dependence and phase matching of high order harmonics generated from such pulses in Neon gas target and compared them with similar measurements using 800 nm driving pulses. Based on measured ellipticity dependence, we predict that double optical gating (DOG) and generalized double optical gating (GDOG) can be employed to extract intense single attosecond pulses from pulse train, while polarization gating (PG) may not work for this purpose. This material is supported by the U.S. Army Research Office under grant number W911NF-07-1-0475, and by the Chemical Sciences, Geosciences and Biosciences Division, Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.

Graphene-based nonvolatile terahertz switch with asymmetric electrodes.

PubMed

Li, Yan; Yu, Hui; Qiu, Xinyu; Dai, Tingge; Jiang, Jianfei; Wang, Gencheng; Zhang, Qiang; Qin, Yali; Yang, Jianyi; Jiang, Xiaoqing

2018-01-24

We propose a nonvolatile terahertz (THz) switch which is able to perform the switching with transient stimulus. The device utilizes graphene as its floating-gate layer, which changes the transmissivity of THz signal by trapping the tunneling charges. The conventional top-down electrode configuration is replaced by a left-right electrode configuration, so THz signals could transmit through this device with the transmissivity being controlled by voltage pulses. The two electrodes are made of metals with different work functions. The resultant asymmetrical energy band structure ensures that both electrical programming and erasing are viable. With the aid of localized surface plasmon resonances in graphene ribbon arrays, the modulation depth is 89% provided that the Femi level of graphene is tuned between 0 and 0.2 eV by proper voltage pulses.

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

PubMed

Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

2017-12-01

We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

SU-F-T-479: Estimation of the Accuracy in Respiratory-Gated Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosawa, T; Miyakawa, S; Sato, M

Purpose: Irregular respiratory patterns affects dose outputs in respiratorygated radiotherapy and there is no commercially available quality assurance (QA) system for it. We designed and developed a patient specific QA system for respiratory-gated radiotherapy to estimate irradiated output. Methods: Our in-house QA system for gating was composed of a personal computer with the USB-FSIO electronic circuit connecting to the linear accelerator (ONCOR-K, Toshiba Medical Systems). The linac implements a respiratory gating system (AZ-733V, Anzai Medical). During the beam was on, 4.2 V square-wave pulses were continually sent to the system. Our system can receive and count the pulses. At first,more » our system and an oscilloscope were compared to check the performance of our system. Next, basic estimation models were generated when ionization-chamber measurements were performed in gating using regular sinusoidal wave patterns (2.0, 2.5, 4.0, 8.0, 15 sec/cycle). During gated irradiation with the regular patterns, the number of the pulses per one gating window was measured using our system. Correlation between the number of the pulses per one gating and dose per the gating window were assessed to generate the estimation model. Finally, two irregular respiratory patterns were created and the accuracy of the estimation was evaluated. Results: Compared to the oscilloscope, our system worked similarly. The basic models were generated with the accuracy within 0.1%. The results of the gated irradiations with two irregular respiratory patterns show good agreement within 0.4% estimation accuracy. Conclusion: Our developed system shows good estimation for even irregular respiration patterns. The system would be a useful tool to verify the output for respiratory-gated radiotherapy.« less

Losses analysis of soft magnetic ring core under sinusoidal pulse width modulation (SPWM) and space vector pulse width modulation (SVPWM) excitations

NASA Astrophysics Data System (ADS)

Gao, Hezhe; Li, Yongjian; Wang, Shanming; Zhu, Jianguo; Yang, Qingxin; Zhang, Changgeng; Li, Jingsong

2018-05-01

Practical core losses in electrical machines differ significantly from those experimental results using the standardized measurement method, i.e. Epstein Frame method. In order to obtain a better approximation of the losses in an electrical machine, a simulation method considering sinusoidal pulse width modulation (SPWM) and space vector pulse width modulation (SVPWM) waveforms is proposed. The influence of the pulse width modulation (PWM) parameters on the harmonic components in SPWM and SVPWM is discussed by fast Fourier transform (FFT). Three-level SPWM and SVPWM are analyzed and compared both by simulation and experiment. The core losses of several ring samples magnetized by SPWM, SVPWM and sinusoidal alternating current (AC) are obtained. In addition, the temperature rise of the samples under SPWM, sinusoidal excitation are analyzed and compared.

ESD protection design for advanced CMOS

NASA Astrophysics Data System (ADS)

Huang, Jin B.; Wang, Gewen

2001-10-01

ESD effects in integrated circuits have become a major concern as today's technologies shrink to sub-micron/deep- sub-micron dimensions. The thinner gate oxide and shallower junction depth used in the advanced technologies make them very vulnerable to ESD damages. The advanced techniques like silicidation and STI (shallow trench insulation) used for improving other device performances make ESD design even more challenging. For non-silicided technologies, a certain DCGS (drain contact to gate edge spacing) is needed to achieve ESD hardness for nMOS output drivers and nMOS protection transistors. The typical DCGS values are 4-5um and 2-3um for 0.5um and 0.25um CMOS, respectively. The silicidation reduces the ballast resistance provided by DCGS with at least a factor of 10. As a result, scaling of the ESD performance with device width is lost and even zero ESD performance is reported for standard silicided devices. The device level ESD design is focused in this paper, which includes GGNMOS (gate grounded NMOS) and GCNMOS (gate coupled NMOS). The device level ESD testing including TLP (transmission line pulse) is given. Several ESD issues caused by advanced technologies have been pointed out. The possible solutions have been developed and summarized including silicide blocking, process optimization, back-end ballasting, and new protection scheme, dummy gate/n-well resistor ballsting, etc. Some of them require process cost increase, and others provide novel, compact, and simple design but involving royalty/IP (intellectual property) issue. Circuit level ESD design and layout design considerations are covered. The top-level ESD protection strategies are also given.

Ultra-wideband radar motion sensor

DOEpatents

McEwan, Thomas E.

1994-01-01

A motion sensor is based on ultra-wideband (UWB) radar. UWB radar range is determined by a pulse-echo interval. For motion detection, the sensors operate by staring at a fixed range and then sensing any change in the averaged radar reflectivity at that range. A sampling gate is opened at a fixed delay after the emission of a transmit pulse. The resultant sampling gate output is averaged over repeated pulses. Changes in the averaged sampling gate output represent changes in the radar reflectivity at a particular range, and thus motion.

Ultra-wideband radar motion sensor

DOEpatents

McEwan, T.E.

1994-11-01

A motion sensor is based on ultra-wideband (UWB) radar. UWB radar range is determined by a pulse-echo interval. For motion detection, the sensors operate by staring at a fixed range and then sensing any change in the averaged radar reflectivity at that range. A sampling gate is opened at a fixed delay after the emission of a transmit pulse. The resultant sampling gate output is averaged over repeated pulses. Changes in the averaged sampling gate output represent changes in the radar reflectivity at a particular range, and thus motion. 15 figs.

Atmospheric electromagnetic pulse propagation effects from thick targets in a terawatt laser target chamber.

PubMed

Remo, John L; Adams, Richard G; Jones, Michael C

2007-08-20

Generation and effects of atmospherically propagated electromagnetic pulses (EMPs) initiated by photoelectrons ejected by the high density and temperature target surface plasmas from multiterawatt laser pulses are analyzed. These laser radiation pulse interactions can significantly increase noise levels, thereby obscuring data (sometimes totally) and may even damage sensitive probe and detection instrumentation. Noise effects from high energy density (approximately multiterawatt) laser pulses (approximately 300-400 ps pulse widths) interacting with thick approximately 1 mm) metallic and dielectric solid targets and dielectric-metallic powder mixtures are interpreted as transient resonance radiation associated with surface charge fluctuations on the target chamber that functions as a radiating antenna. Effective solutions that minimize atmospheric EMP effects on internal and proximate electronic and electro-optical equipment external to the system based on systematic measurements using Moebius loop antennas, interpretations of signal periodicities, and dissipation indicators determining transient noise origin characteristics from target emissions are described. Analytic models for the effect of target chamber resonances and associated noise current and temperature in a probe diode laser are described.

Atmospheric electromagnetic pulse propagation effects from thick targets in a terawatt laser target chamber

NASA Astrophysics Data System (ADS)

Remo, John L.; Adams, Richard G.; Jones, Michael C.

2007-08-01

Generation and effects of atmospherically propagated electromagnetic pulses (EMPs) initiated by photoelectrons ejected by the high density and temperature target surface plasmas from multiterawatt laser pulses are analyzed. These laser radiation pulse interactions can significantly increase noise levels, thereby obscuring data (sometimes totally) and may even damage sensitive probe and detection instrumentation. Noise effects from high energy density (approximately multiterawatt) laser pulses (˜300-400 ps pulse widths) interacting with thick (˜1 mm) metallic and dielectric solid targets and dielectric-metallic powder mixtures are interpreted as transient resonance radiation associated with surface charge fluctuations on the target chamber that functions as a radiating antenna. Effective solutions that minimize atmospheric EMP effects on internal and proximate electronic and electro-optical equipment external to the system based on systematic measurements using Moebius loop antennas, interpretations of signal periodicities, and dissipation indicators determining transient noise origin characteristics from target emissions are described. Analytic models for the effect of target chamber resonances and associated noise current and temperature in a probe diode laser are described.

Atmospheric electromagnetic pulse propagation effects from thick targets in a terawatt laser target chamber

DOE PAGES

Remo, John L.; Adams, Richard G.; Jones, Michael C.

2007-08-16

Generation and effects of atmospherically propagated electromagnetic pulses (EMPs) initiated by photoelectrons ejected by the high density and temperature target surface plasmas from multiterawatt laser pulses are analyzed. These laser radiation pulse interactions can significantly increase noise levels, thereby obscuring data (sometimes totally) and may even damage sensitive probe and detection instrumentation. Noise effects from high energy density (approximately multiterawatt) laser pulses (~300–400 ps pulse widths) interacting with thick (~1 mm) metallic and dielectric solid targets and dielectric–metallic powder mixtures are interpreted as transient resonance radiation associated with surface charge fluctuations on the target chamber that functions as a radiatingmore » antenna. Effective solutions that minimize atmospheric EMP effects on internal and proximate electronic and electro-optical equipment external to the system based on systematic measurements using Moebius loop antennas, interpretations of signal periodicities, and dissipation indicators determining transient noise origin characteristics from target emissions are described. Analytic models for the effect of target chamber resonances and associated noise current and temperature in a probe diode laser are described.« less

High-rate dead-time corrections in a general purpose digital pulse processing system

PubMed Central

Abbene, Leonardo; Gerardi, Gaetano

2015-01-01

Dead-time losses are well recognized and studied drawbacks in counting and spectroscopic systems. In this work the abilities on dead-time correction of a real-time digital pulse processing (DPP) system for high-rate high-resolution radiation measurements are presented. The DPP system, through a fast and slow analysis of the output waveform from radiation detectors, is able to perform multi-parameter analysis (arrival time, pulse width, pulse height, pulse shape, etc.) at high input counting rates (ICRs), allowing accurate counting loss corrections even for variable or transient radiations. The fast analysis is used to obtain both the ICR and energy spectra with high throughput, while the slow analysis is used to obtain high-resolution energy spectra. A complete characterization of the counting capabilities, through both theoretical and experimental approaches, was performed. The dead-time modeling, the throughput curves, the experimental time-interval distributions (TIDs) and the counting uncertainty of the recorded events of both the fast and the slow channels, measured with a planar CdTe (cadmium telluride) detector, will be presented. The throughput formula of a series of two types of dead-times is also derived. The results of dead-time corrections, performed through different methods, will be reported and discussed, pointing out the error on ICR estimation and the simplicity of the procedure. Accurate ICR estimations (nonlinearity < 0.5%) were performed by using the time widths and the TIDs (using 10 ns time bin width) of the detected pulses up to 2.2 Mcps. The digital system allows, after a simple parameter setting, different and sophisticated procedures for dead-time correction, traditionally implemented in complex/dedicated systems and time-consuming set-ups. PMID:26289270

All-optical switch and transistor gated by one stored photon.

PubMed

Chen, Wenlan; Beck, Kristin M; Bücker, Robert; Gullans, Michael; Lukin, Mikhail D; Tanji-Suzuki, Haruka; Vuletić, Vladan

2013-08-16

The realization of an all-optical transistor, in which one "gate" photon controls a "source" light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical resonator, we realized a device in which one stored gate photon controls the resonator transmission of subsequently applied source photons. A weak gate pulse induces bimodal transmission distribution, corresponding to zero and one gate photons. One stored gate photon produces fivefold source attenuation and can be retrieved from the atomic ensemble after switching more than one source photon. Without retrieval, one stored gate photon can switch several hundred source photons. With improved storage and retrieval efficiency, our work may enable various new applications, including photonic quantum gates and deterministic multiphoton entanglement.

Total Charge Movement per Channel

PubMed Central

Sigg, Daniel; Bezanilla, Francisco

1997-01-01

One measure of the voltage dependence of ion channel conductance is the amount of gating charge that moves during activation and vice versa. The limiting slope method, introduced by Almers (Almers, W. 1978. Rev. Physiol. Biochem. Pharmacol. 82:96–190), exploits the relationship of charge movement and voltage sensitivity, yielding a lower limit to the range of single channel gating charge displacement. In practice, the technique is plagued by low experimental resolution due to the requirement that the logarithmic voltage sensitivity of activation be measured at very low probabilities of opening. In addition, the linear sequential models to which the original theory was restricted needed to be expanded to accommodate the complexity of mechanisms available for the activation of channels. In this communication, we refine the theory by developing a relationship between the mean activation charge displacement (a measure of the voltage sensitivity of activation) and the gating charge displacement (the integral of gating current). We demonstrate that recording the equilibrium gating charge displacement as an adjunct to the limiting slope technique greatly improves accuracy under conditions where the plots of mean activation charge displacement and gross gating charge displacement versus voltage can be superimposed. We explore this relationship for a wide variety of channel models, which include those having a continuous density of states, nonsequential activation pathways, and subconductance states. We introduce new criteria for the appropriate use of the limiting slope procedure and provide a practical example of the theory applied to low resolution simulation data. PMID:8997663

Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

NASA Astrophysics Data System (ADS)

Matsuoka, Satoshi; Tsutsumi, Jun'ya; Kamata, Toshihide; Hasegawa, Tatsuo

2018-04-01

In this work, a high-resolution microscopic gate-modulation imaging (μ-GMI) technique is successfully developed to visualize inhomogeneous charge and electric field distributions in operating organic thin-film transistors (TFTs). We conduct highly sensitive and diffraction-limit gate-modulation sensing for acquiring difference images of semiconducting channels between at gate-on and gate-off states that are biased at an alternate frequency of 15 Hz. As a result, we observe unexpectedly inhomogeneous distribution of positive and negative local gate-modulation (GM) signals at a probe photon energy of 1.85 eV in polycrystalline pentacene TFTs. Spectroscopic analyses based on a series of μ-GMI at various photon energies reveal that two distinct effects appear, simultaneously, within the polycrystalline pentacene channel layers: Negative GM signals at 1.85 eV originate from the second-derivative-like GM spectrum which is caused by the effect of charge accumulation, whereas positive GM signals originate from the first-derivative-like GM spectrum caused by the effect of leaked gate fields. Comparisons with polycrystalline morphologies indicate that grain centers are predominated by areas with high leaked gate fields due to the low charge density, whereas grain edges are predominantly high-charge-density areas with a certain spatial extension as associated with the concentrated carrier traps. Consequently, it is reasonably understood that larger grains lead to higher device mobility, but with greater inhomogeneity in charge distribution. These findings provide a clue to understand and improve device characteristics of polycrystalline TFTs.

A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.

PubMed

Jiang, J; Ma, G M; Luo, D P; Li, C R; Li, Q M; Wang, W

2014-02-01

Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

Clinically insubstantial cognitive side effects of bitemporal electroconvulsive therapy at 0.5 msec pulse width.

PubMed

Warnell, Ronald L; Swartz, Conrad M; Thomson, Alice

2011-11-01

We measured cognitive side effects from bitemporal electroconvulsive therapy (ECT) using stimuli of 0.5 msec pulse width 900 milliamperes (mA). Mini-Mental State Exam (MMSE) and 21-item Hamilton Rating Scale for Depression (HRSD-21) were rated within 36 hours before and 36 hours after a series of 6 bitemporal ECT sessions on 15 patients age ≥45. MMSE remained high after ECT (pre-ECT mean 29, standard deviation [SD] 1.60, post-ECT mean 28.53, SD 1.36) with no significant change. The mean HRSD-21 fell from 27.5 to 16.3. Post-ECT MMSE was significantly and markedly higher than in previous studies of bitemporal ECT; all had used ECT stimuli of pulse width at least 1 msec. With stimuli of 0.5 msec pulse width and 900 mA, 6 bitemporal ECTs did not decrease MMSE score. This result leaves no opportunity for further decrease in basic cognitive side effects, and complements published reports of stronger physiological effects with stimuli of 0.5 msec pulse width and 900 mA. ECT stimuli of 0.5 msec pulse width and 900 mA are more desirable than wider pulse widths. Six bitemporal ECT sessions using these stimuli generally will not have more cognitive side effects than treatments with other placements, allowing maintenance of full efficacy with clinically insubstantial side effects.

Effect of laser pulsing on the composition measurement of an Al-Mg-Si-Cu alloy using three-dimensional atom probe.

PubMed

Sha, G; Ringer, S P

2009-04-01

The effect of laser pulse energy on the composition measurement of an Al-Mg-Si-Cu alloy (AA6111) specimen has been investigated over a base temperature range of 20-80K and a voltage range of 2.5-5kV. Laser pulse energy must be sufficiently higher to achieve pulse-controlled field evaporation, which is at least 0.9nJ with a beam spot size of about 5microm, providing an equivalent voltage pulse fraction, approximately 14% at 80K for the alloy specimen. In contrast to the cluster composition, the measured specimen composition is sensitive to base temperature and laser energy changes. The exchange charge state under the influence of laser pulsing makes the detection of Si better at low base temperature, but detection of Cr and Mn is better at a higher temperature and using higher laser energy. No such effect occurs for detection of Mg and Cu under laser pulsing, although Mg concentration is sensitive to the analysis temperature under voltage pulsing. Mass resolution at full-width half-maximum is sensitive to local taper angle near the apex, but has little effect on composition measurement.

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure

NASA Astrophysics Data System (ADS)

Kim, Hyung Jun; Park, Daehoon; Yang, Paul; Beom, Keonwon; Kim, Min Ju; Shin, Chansun; Kang, Chi Jung; Yoon, Tae-Sik

2018-06-01

A crossbar array of Pt/CeO2/Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of ∼103, corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage- and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO2/Pt memristors as artificial synapses in highly connected neuron-synapse network.

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure.

PubMed

Kim, Hyung Jun; Park, Daehoon; Yang, Paul; Beom, Keonwon; Kim, Min Ju; Shin, Chansun; Kang, Chi Jung; Yoon, Tae-Sik

2018-06-29

A crossbar array of Pt/CeO 2 /Pt memristors exhibited the synaptic characteristics such as analog, reversible, and strong resistance change with a ratio of ∼10 3 , corresponding to wide dynamic range of synaptic weight modulation as potentiation and depression with respect to the voltage polarity. In addition, it presented timing-dependent responses such as paired-pulse facilitation and the short-term to long-term memory transition by increasing amplitude, width, and repetition number of voltage pulse and reducing the interval time between pulses. The memory loss with a time was fitted with a stretched exponential relaxation model, revealing the relation of memory stability with the input stimuli strength. The resistance change was further enhanced but its stability got worse as increasing measurement temperature, indicating that the resistance was changed as a result of voltage- and temperature-dependent electrical charging and discharging to alter the energy barrier for charge transport. These detailed synaptic characteristics demonstrated the potential of crossbar array of Pt/CeO 2 /Pt memristors as artificial synapses in highly connected neuron-synapse network.

The CARIBU EBIS control and synchronization system

NASA Astrophysics Data System (ADS)

Dickerson, Clayton; Peters, Christopher

2015-01-01

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

Body monitoring and imaging apparatus and method

DOEpatents

McEwan, T.E.

1996-11-12

A non-acoustic pulse-echo radar monitor is employed in the repetitive mode, whereby a large number of reflected pulses are averaged to produce a voltage that modulates an audio oscillator to produce a tone that corresponds to the heart motion. The antenna used in this monitor generally comprises two flat copper foils, thus permitting the antenna to be housed in a substantially flat housing. The monitor converts the detected voltage to an audible signal with both amplitude modulation and Doppler effect. It further uses a dual time constant to reduce the effect of gross sensor-to-surface movement. The monitor detects the movement of one or more internal body parts, such as the heart, lungs, arteries, and vocal chords, and includes a pulse generator for simultaneously inputting a sequence of pulses to a transmit path and a gating path. The pulses transmitted along the transmit path drive an impulse generator and provide corresponding transmit pulses that are applied to a transmit antenna. The gating path includes a range delay generator which generates timed gating pulses. The timed gating pulses cause the receive path to selectively conduct pulses reflected from the body parts and received by a receive antenna. The monitor output potential can be separated into a cardiac output indicative of the physical movement of the heart, and a pulmonary output indicative of the physical movement of the lung. 12 figs.

Body monitoring and imaging apparatus and method

DOEpatents

McEwan, Thomas E.

1996-01-01

A non-acoustic pulse-echo radar monitor is employed in the repetitive mode, whereby a large number of reflected pulses are averaged to produce a voltage that modulates an audio oscillator to produce a tone that corresponds to the heart motion. The antenna used in this monitor generally comprises two flat copper foils, thus permitting the antenna to be housed in a substantially flat housing. The monitor converts the detected voltage to an audible signal with both amplitude modulation and Doppler effect. It further uses a dual time constant to reduce the effect of gross sensor-to-surface movement. The monitor detects the movement of one or more internal body parts, such as the heart, lungs, arteries, and vocal chords, and includes a pulse generator for simultaneously inputting a sequence of pulses to a transmit path and a gating path. The pulses transmitted along the transmit path drive an impulse generator and provide corresponding transmit pulses that are applied to a transmit antenna. The gating path includes a range delay generator which generates timed gating pulses. The timed gating pulses cause the receive path to selectively conduct pulses reflected from the body parts and received by a receive antenna. The monitor output potential can be separated into a cardiac output indicative of the physical movement of the heart, and a pulmonary output indicative of the physical movement of the lung.

High dose-per-pulse electron beam dosimetry: Commissioning of the Oriatron eRT6 prototype linear accelerator for preclinical use.

PubMed

Jaccard, Maud; Durán, Maria Teresa; Petersson, Kristoffer; Germond, Jean-François; Liger, Philippe; Vozenin, Marie-Catherine; Bourhis, Jean; Bochud, François; Bailat, Claude

2018-02-01

The Oriatron eRT6 is an experimental high dose-per-pulse linear accelerator (linac) which was designed to deliver an electron beam with variable dose-rates, ranging from a few Gy/min up to hundreds of Gy/s. It was built to study the radiobiological effects of high dose-per-pulse/dose-rate electron beam irradiation, in the context of preclinical and cognitive studies. In this work, we report on the commissioning and beam monitoring of the Oriatron eRT6 prototype linac. The beam was characterized in different steps. The output stability was studied by performing repeated measurements over a period of 20 months. The relative output variations caused by changing beam parameters, such as the temporal electron pulse width, the pulse repetition frequency and the pulse amplitude were also analyzed. Finally, depth dose curves and field sizes were measured for two different beam settings, resulting in one beam with a conventional radiotherapy dose-rate and one with a much higher dose-rate. Measurements were performed with Gafchromic EBT3 films and with a PTW Advanced Markus ionization chamber. In addition, we developed a beam current monitoring system based on the signals from an induction torus positioned at the beam exit of the waveguide and from a graphite beam collimator. The stability of the output over repeated measurements was found to be good, with a standard deviation smaller than 1%. However, non-negligible day-to-day variations of the beam output were observed. Those output variations showed different trends depending on the dose-rate. The analysis of the relative output variation as a function of various beam parameters showed that in a given configuration, the dose-rate could be reliably varied over three orders of magnitude. Interdependence effects on the output variation between the parameters were also observed. The beam energy and field size were found to be slightly dose-rate-dependent and suitable mainly for small animal irradiation. The beam monitoring system was able to measure in a reproducible way the total charge of electrons that exit the machine, as long as the electron pulse amplitude remains above a given threshold. Furthermore, we were able to relate the charge measured with the monitoring system to the absorbed dose in a solid water phantom. The Oriatron eRT6 was successfully commissioned for preclinical use and is currently in full operation, with studies being performed on the radiobiological effects of high dose-per-pulse irradiation. © 2017 American Association of Physicists in Medicine.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

PubMed

Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

2014-06-01

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

LINEAR COUNT-RATE METER

DOEpatents

Henry, J.J.

1961-09-01

A linear count-rate meter is designed to provide a highly linear output while receiving counting rates from one cycle per second to 100,000 cycles per second. Input pulses enter a linear discriminator and then are fed to a trigger circuit which produces positive pulses of uniform width and amplitude. The trigger circuit is connected to a one-shot multivibrator. The multivibrator output pulses have a selected width. Feedback means are provided for preventing transistor saturation in the multivibrator which improves the rise and decay times of the output pulses. The multivibrator is connected to a diode-switched, constant current metering circuit. A selected constant current is switched to an averaging circuit for each pulse received, and for a time determined by the received pulse width. The average output meter current is proportional to the product of the counting rate, the constant current, and the multivibrator output pulse width.

Droplet size distributions of adjuvant-amended sprays from an air-assisted five-port PWM nozzle

USDA-ARS?s Scientific Manuscript database

Verification of droplet size distributions is essential for the development of real-time variable-rate sprayers that synchronize spray outputs with canopy structures. Droplet sizes from a custom-designed, air-assisted, five-port nozzle coupled with a pulse-width-modulated (PWM) solenoid valve were m...

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

High resolution, high rate X-ray spectrometer

DOEpatents

Goulding, Frederick S.; Landis, Donald A.

1987-01-01

A pulse processing system (10) for use in an X-ray spectrometer in which a ain channel pulse shaper (12) and a fast channel pulse shaper (13) each produce a substantially symmetrical triangular pulse (f, p) for each event detected by the spectrometer, with the pulse width of the pulses being substantially independent of the magnitude of the detected event and with the pulse width of the fast pulses (p) being substantially shorter than the pulse width of the main channel pulses (f). A pile-up rejector circuit (19) allows output pulses to be generated, with amplitudes linearly related to the magnitude of the detected events, whenever the peak of a main channel pulse (f) is not affected by a preceding or succeeding main channel pulse, while inhibiting output pulses wherein peak magnitudes of main channel pulses are affected by adjacent pulses. The substantially symmetrical triangular main channel pulses (f) are generated by the weighted addition (27-31) of successive RC integrations (24, 25, 26) of an RC differentiated step wave (23). The substantially symmetrical triangular fast channel pulses (p) are generated by the RC integration ( 43) of a bipolar pulse (o) in which the amplitude of the second half is 1/e that of the first half, with the RC time constant of integration being equal to one-half the width of the bipolar pulse.

Experimental determination of the impact of polysilicon LER on sub-100-nm transistor performance

NASA Astrophysics Data System (ADS)

Patterson, Kyle; Sturtevant, John L.; Alvis, John R.; Benavides, Nancy; Bonser, Douglas; Cave, Nigel; Nelson-Thomas, Carla; Taylor, William D.; Turnquest, Karen L.

2001-08-01

Photoresist line edge roughness (LER) has long been feared as a potential limitation to the application of various patterning technologies to actual devices. While this concern seems reasonable, experimental verification has proved elusive and thus LER specifications are typically without solid parametric rationale. We report here the transistor device performance impact of deliberate variations of polysilicon gate LER. LER magnitude was attenuated by more than a factor of 5 by altering the photoresist type and thickness, substrate reflectivity, masking approach, and etch process. The polysilicon gate LER for nominally 70 - 150 nm devices was quantified using digital image processing of SEM images, and compared to gate leakage and drive current for variable length and width transistors. With such comparisons, realistic LER specifications can be made for a given transistor. It was found that subtle cosmetic LER differences are often not discernable electrically, thus providing hope that LER will not limit transistor performance as the industry migrates to sub-100 nm patterning.

The possibility of multi-layer nanofabrication via atomic force microscope-based pulse electrochemical nanopatterning

NASA Astrophysics Data System (ADS)

Kim, Uk Su; Morita, Noboru; Lee, Deug Woo; Jun, Martin; Park, Jeong Woo

2017-05-01

Pulse electrochemical nanopatterning, a non-contact scanning probe lithography process using ultrashort voltage pulses, is based primarily on an electrochemical machining process using localized electrochemical oxidation between a sharp tool tip and the sample surface. In this study, nanoscale oxide patterns were formed on silicon Si (100) wafer surfaces via electrochemical surface nanopatterning, by supplying external pulsed currents through non-contact atomic force microscopy. Nanoscale oxide width and height were controlled by modulating the applied pulse duration. Additionally, protruding nanoscale oxides were removed completely by simple chemical etching, showing a depressed pattern on the sample substrate surface. Nanoscale two-dimensional oxides, prepared by a localized electrochemical reaction, can be defined easily by controlling physical and electrical variables, before proceeding further to a layer-by-layer nanofabrication process.

Enhancing the performance of exchange-only qubits in triple-quantum-dots

NASA Astrophysics Data System (ADS)

Fei, Jianjia; Hung, Jo-Tzu; Koh, Teck Seng; Shim, Yun-Pil; Coppersmith, Susan; Hu, Xuedong; Friesen, Mark

2014-03-01

The exchange-only qubit has several potential advantages for quantum computation: all-electrical control, fast gate operations, and robustness against global magnetic noise. Such a device has recently been implemented in a GaAs triple-quantum-dot. In this talk, we discuss theoretical simulations of the fidelity of pulsed gate operations of the exchange-only qubit, based on a master equation approach. Our model accounts for several different dephasing mechanisms, including hyperfine interactions and charge noise arising from double-occupation errors and fluctuations of the detuning parameter. Our investigations indicate the optimal working regimes and maximum gate fidelities for these devices, in terms of experimentally tunable parameters. This work was supported by the Army Research Office, the National Science Foundation, and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. This work was supported by the Army Research Office, the National Science Foundation, and the United States Department of Defense.

Performance of large aperture tapered fiber phase conjugate mirror with high pulse energy and 1-kHz repetition rate.

PubMed

Zhao, Zhigang; Dong, Yantao; Pan, Sunqiang; Liu, Chong; Chen, Jun; Tong, Lixin; Gao, Qingsong; Tang, Chun

2012-01-16

A large aperture fused silica tapered fiber phase conjugate mirror is presented with a maximum 70% stimulated Brillouin scattering (SBS) reflectivity, which is obtained with 1 kHz repetition rate, 15 ns pulse width and 38 mJ input pulse energy. To the best of our knowledge, this is the highest SBS reflectivity ever reported by using optical fiber as a phase conjugate mirror for such high pulse repetition rate (1 kHz) and several tens of millijoule (mJ) input pulse energy. The influences of fiber end surface quality and pump pulse widths on SBS reflectivity are investigated experimentally. The results show that finer fiber end surface quality and longer input pulse widths are preferred for obtaining higher SBS reflectivity with higher input pulse energy. Double passing amplification experiments are also performed. 52 mJ pulse energy is achieved at 1 kHz repetition rate, with a reflected SBS pulse width of 1.5 ns and a M(2) factor of 2.3. The corresponding peak power reaches 34.6 MW. Obvious beam quality improvement is observed.

Scalable uniform construction of highly conditional quantum gates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ivanov, Svetoslav S.; Vitanov, Nikolay V.

2011-08-15

We present a scalable uniform technique for the construction of highly conditional multiply-controlled-not quantum gates of trapped ion qubits, such as the Toffoli gate, without using ancilla states and circuits of an exorbitant number of concatenated one- and two-qubit gates. Apart from the initial dressing of the internal qubit states with vibrational phonons and the final restoration of the phonon ground state, our technique requires the application of just a single composite pulse on the target qubit and is applicable both in and outside the Lamb-Dicke regime. We design special narrowband composite pulses, which suppress all transitions but the conditionalmore » transition of the target qubit; moreover, these composite pulses significantly improve the spatial addressing selectivity.« less

A dual slope charge sampling analog front-end for a wireless neural recording system.

PubMed

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit; Ghovanloo, Maysam

2014-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-μm CMOS process, occupying 2.4 × 2.1 mm(2) and consuming 255 μW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 μV(rms) in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 μW.

A Dual Slope Charge Sampling Analog Front-End for a Wireless Neural Recording System

PubMed Central

Lee, Seung Bae; Lee, Byunghun; Gosselin, Benoit

2015-01-01

This paper presents a novel dual slope charge sampling (DSCS) analog front-end (AFE) architecture, which amplifies neural signals by taking advantage of the charge sampling concept for analog signal conditioning, such as amplification and filtering. The presented DSCS-AFE achieves amplification, filtering, and sampling in a simultaneous fashion, while consuming very small amount of power. The output of the DSCS-AFE produces a pulse width modulated (PWM) signal that is proportional to the input voltage amplitude. A circular shift register (CSR) utilizes time division multiplexing (TDM) of the PWM pulses to create a pseudo-digital TDM-PWM signal that can feed a wireless transmitter. The 8-channel system-on-a-chip was fabricated in a 0.35-µm CMOS process, occupying 2.4 × 2.1 mm2 and consuming 255 µW from a 1.8V supply. Measured input-referred noise for the entire system, including the FPGA in order to recover PWM signal is 6.50 µVrms in the 288 Hz~10 kHz range. For each channel, sampling rate is 31.25 kHz, and power consumption is 31.8 µW. PMID:25570655

Long-Lag, Wide-pulse Gamma-Ray Bursts

NASA Technical Reports Server (NTRS)

Norris, J. P.; Bonnell, J. T.; Kazanas, D.; Scargle, . D.; Hakkila, J.; Giblin, T. W.

2004-01-01

Currently, the best available probe of the early phase of gamma-ray burst (GRB) jet attributes is the prompt gamma-ray emission, in which several intrinsic and extrinsic variables determine GRB pulse evolution. Bright, usually complex bursts have many narrow pulses that are difficult to model due to overlap. However, the relatively simple, long spectral lag, wide-pulse bursts may have simpler physics and are easier to model. In this work we analyze the temporal and spectral behavior of wide pulses in 24 long-lag bursts, using a pulse model with two shape parameters - width and asymmetry - and the Band spectral model with three shape parameters. We find that pulses in long-lag bursts are distinguished both temporally and spectrally from those in bright bursts: the pulses in long spectral lag bursts are few in number, and approximately 100 times wider (10s of seconds), have systematically lower peaks in vF(v), harder low-energy spectra and softer high-energy spectra. We find that these five pulse descriptors are essentially uncorrelated for our long-lag sample, suggesting that at least approximately 5 parameters are needed to model burst temporal and spectral behavior. However, pulse width is strongly correlated with spectral lag; hence these two parameters may be viewed as mutual surrogates. We infer that accurate formulations for estimating GRB luminosity and total energy will depend on several gamma-ray attributes, at least for long-lag bursts. The prevalence of long-lag bursts near the BATSE trigger threshold, their predominantly low vF(v) spectral peaks, and relatively steep upper power-law spectral indices indicate that Swift will detect many such bursts.

Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

NASA Astrophysics Data System (ADS)

Hsu, Hung-Wen; Lee, Chang-Chun

2017-12-01

This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

NASA Astrophysics Data System (ADS)

Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

2017-03-01

A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

NASA Astrophysics Data System (ADS)

Wadhwa, Girish; Raj, Balwinder

2018-05-01

Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) for the revelation of biomolecule immobilized in the open cavity gate channel region. In this p+ source and n+ drain regions are introduced by employing different work function over the intrinsic silicon. Also dual material gate architecture is implemented to reduce short channel effect without abandoning any other device characteristic. The sensitivity of biosensor is studied for both the neutral and charge-neutral biomolecules. The effect of device parameters such as channel thickness, cavity length and cavity thickness on drain current have been analyzed through simulations. This paper investigates the performance of charge-plasma-based gate underlap DM-JLTFET for biomolecule sensing applications while varying dielectric constant, charge density at different biasing conditions.

Tuning the electronic properties of gated multilayer phosphorene: A self-consistent tight-binding study

NASA Astrophysics Data System (ADS)

Li, L. L.; Partoens, B.; Peeters, F. M.

2018-04-01

By taking account of the electric-field-induced charge screening, a self-consistent calculation within the framework of the tight-binding approach is employed to obtain the electronic band structure of gated multilayer phosphorene and the charge densities on the different phosphorene layers. We find charge density and screening anomalies in single-gated multilayer phosphorene and electron-hole bilayers in dual-gated multilayer phosphorene. Due to the unique puckered lattice structure, both intralayer and interlayer charge screenings are important in gated multilayer phosphorene. We find that the electric-field tuning of the band structure of multilayer phosphorene is distinctively different in the presence and absence of charge screening. For instance, it is shown that the unscreened band gap of multilayer phosphorene decreases dramatically with increasing electric-field strength. However, in the presence of charge screening, the magnitude of this band-gap decrease is significantly reduced and the reduction depends strongly on the number of phosphorene layers. Our theoretical results of the band-gap tuning are compared with recent experiments and good agreement is found.

Revisiting NMR composite pulses for broadband 2H excitation

PubMed Central

Shen, Ming; Roopchand, Rabia; Mananga, Eugene S.; Amoureux, Jean-Paul; Chen, Qun; Boutis, Gregory S.; Hu, Bingwen

2014-01-01

Quadrupolar echo NMR spectroscopy of static solids often requires RF excitation that covers spectral widths exceeding 100 kHz, which is difficult to obtain due to instrumental limitations. In this work we revisit four well-known composite pulses (COM-I, II, III and IV) for broadband excitation in deuterium quadrupolar echo spectroscopy. These composite pulses are combined with several phase cycling schemes that were previously shown to decrease finite pulse width distortions in deuterium solid-echo experiments performed with two single pulses. The simulations and experiments show that COM-II and IV composite pulses combined with an 8-step phase cycling aid in achieving broadband excitation with limited pulse width distortions. PMID:25583576

Large electron concentration modulation using capacitance enhancement in SrTiO{sub 3}/SmTiO{sub 3} Fin-field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verma, Amit, E-mail: averma@cornell.edu; Nomoto, Kazuki; School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853

2016-05-02

Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (∼3.3 × 10{sup 14 }cm{sup −2}) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO{sub 3}/GdTiO{sub 3} or SrTiO{sub 3}/SmTiO{sub 3}) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60 nm SrTiO{sub 3}/5 nm SmTiO{sub 3} thin films grown by hybrid molecular beam epitaxy. We find that the FinFETs exhibit higher gate capacitance comparedmore » to planar FETs. By scaling down the SrTiO{sub 3}/SmTiO{sub 3} fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ∼2.4 × 10{sup 14 }cm{sup −2}.« less

Transient digitizer with displacement current samplers

DOEpatents

McEwan, T.E.

1996-05-21

A low component count, high speed sample gate, and digitizer architecture using the sample gates is based on use of a signal transmission line, a strobe transmission line and a plurality of sample gates connected to the sample transmission line at a plurality of positions. The sample gates include a strobe pickoff structure near the strobe transmission line which generates a charge displacement current in response to propagation of the strobe signal on the strobe transmission line sufficient to trigger the sample gate. The sample gate comprises a two-diode sampling bridge and is connected to a meandered signal transmission line at one end and to a charge-holding cap at the other. The common cathodes are reverse biased. A voltage step is propagated down the strobe transmission line. As the step propagates past a capacitive pickoff, displacement current i=c(dv/dT), flows into the cathodes, driving the bridge into conduction and thereby charging the charge-holding capacitor to a value related to the signal. A charge amplifier converts the charge on the charge-holding capacitor to an output voltage. The sampler is mounted on a printed circuit board, and the sample transmission line and strobe transmission line comprise coplanar microstrips formed on a surface of the substrate. Also, the strobe pickoff structure may comprise a planar pad adjacent the strobe transmission line on the printed circuit board. 16 figs.

Transient digitizer with displacement current samplers

DOEpatents

McEwan, Thomas E.

1996-01-01

A low component count, high speed sample gate, and digitizer architecture using the sample gates is based on use of a signal transmission line, a strobe transmission line and a plurality of sample gates connected to the sample transmission line at a plurality of positions. The sample gates include a strobe pickoff structure near the strobe transmission line which generates a charge displacement current in response to propagation of the strobe signal on the strobe transmission line sufficient to trigger the sample gate. The sample gate comprises a two-diode sampling bridge and is connected to a meandered signal transmission line at one end and to a charge-holding cap at the other. The common cathodes are reverse biased. A voltage step is propagated down the strobe transmission line. As the step propagates past a capacitive pickoff, displacement current i=c(dv/dT), flows into the cathodes, driving the bridge into conduction and thereby charging the charge-holding capacitor to a value related to the signal. A charge amplifier converts the charge on the charge-holding capacitor to an output voltage. The sampler is mounted on a printed circuit board, and the sample transmission line and strobe transmission line comprise coplanar microstrips formed on a surface of the substrate. Also, the strobe pickoff structure may comprise a planar pad adjacent the strobe transmission line on the printed circuit board.

Implementing quantum logic gates with gradient ascent pulse engineering: principles and practicalities.

PubMed

Rowland, Benjamin; Jones, Jonathan A

2012-10-13

We briefly describe the use of gradient ascent pulse engineering (GRAPE) pulses to implement quantum logic gates in nuclear magnetic resonance quantum computers, and discuss a range of simple extensions to the core technique. We then consider a range of difficulties that can arise in practical implementations of GRAPE sequences, reflecting non-idealities in the experimental systems used.

Pulse oximeter using a gain-modulated avalanche photodiode operated in a pseudo lock-in light detection mode

NASA Astrophysics Data System (ADS)

Miyata, Tsuyoshi; Iwata, Tetsuo; Araki, Tsutomu

2006-01-01

We propose a reflection-type pulse oximeter, which employs two pairs of a light-emitting diode (LED) and a gated avalanche photodiode (APD). One LED is a red one with an emission wavelength λ = 635 nm and the other is a near-infrared one with that λ = 945 nm, which are both driven with a pulse mode at a frequency f (=10 kHz). Superposition of a transistor-transistor-logic (TTL) gate pulse on a direct-current (dc) bias, which is set so as not exceeding the breakdown voltage of each APD, makes the APD work in a gain-enhanced operation mode. Each APD is gated at a frequency 2f (=20 kHz) and its output signal is fed into a laboratory-made lock-in amplifier that works in synchronous with the pulse modulation signal of each LED at a frequency f (=10 kHz). A combination of the gated APD and the lock-in like signal detection scheme is useful for the reflection-type pulse oximeter thanks to the capability of detecting a weak signal against a large background (BG) light.

P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

NASA Astrophysics Data System (ADS)

Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

2018-04-01

In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

Energetic distributions of interface states Dit(phi sub s) of MOS transistors in extension of Kuhn's quasistatic C(V)-method

NASA Astrophysics Data System (ADS)

Krautschneider, W.; Wagemann, H. G.

1983-10-01

Kuhn's quasi-static C(V)-method has been extended to MOS transistors by considering the capacitances of the source and drain p-n junctions additionally to the MOS varactor circuit model. The width of the space charge layers w(phi sub s) is calculated as a function of the surface potential phi sub s and applied to the MOS capacitance as a function of the gate voltage. Capacitance behavior for different channel length is presented as a model and compared to measurement results and evaluations of energetic distributions of interface states Dit(phi sub s) for MOS transistor and MOS varactor on the same chip.

Time-resolved spectroscopy using a chopper wheel as a fast shutter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Shicong; Wendt, Amy E.; Boffard, John B.

Widely available, small form-factor, fiber-coupled spectrometers typically have a minimum exposure time measured in milliseconds, and thus cannot be used directly for time-resolved measurements at the microsecond level. Spectroscopy at these faster time scales is typically done with an intensified charge coupled device (CCD) system where the image intensifier acts as a “fast” electronic shutter for the slower CCD array. In this paper, we describe simple modifications to a commercially available chopper wheel system to allow it to be used as a “fast” mechanical shutter for gating a fiber-coupled spectrometer to achieve microsecond-scale time-resolved optical measurements of a periodically pulsedmore » light source. With the chopper wheel synchronized to the pulsing of the light source, the time resolution can be set to a small fraction of the pulse period by using a chopper wheel with narrow slots separated by wide spokes. Different methods of synchronizing the chopper wheel and pulsing of the light sources are explored. The capability of the chopper wheel system is illustrated with time-resolved measurements of pulsed plasmas.« less

Local gate control in carbon nanotube quantum devices

NASA Astrophysics Data System (ADS)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Numerical simulation of terahertz generation and detection based on ultrafast photoconductive antennas

NASA Astrophysics Data System (ADS)

Chen, Long-chao; Fan, Wen-hui

2011-08-01

The numerical simulation of terahertz generation and detection in the interaction between femtosecond laser pulse and photoconductive material has been reported in this paper. The simulation model based on the Drude-Lorentz theory is used, and takes into account the phenomena that photo-generated electrons and holes are separated by the external bias field, which is screened by the space-charge field simultaneously. According to the numerical calculation, the terahertz time-domain waveforms and their Fourier-transformed spectra are presented under different conditions. The simulation results indicate that terahertz generation and detection properties of photoconductive antennas are largely influenced by three major factors, including photo-carriers' lifetime, laser pulse width and pump laser power. Finally, a simple model has been applied to simulate the detected terahertz pulses by photoconductive antennas with various photo-carriers' lifetimes, and the results show that the detected terahertz spectra are very different from the spectra radiated from the emitter.

Petahertz optical oscilloscope

NASA Astrophysics Data System (ADS)

Kim, Kyung Taec; Zhang, Chunmei; Shiner, Andrew D.; Schmidt, Bruno E.; Légaré, François; Villeneuve, D. M.; Corkum, P. B.

2013-12-01

The time-dependent field of an electromagnetic pulse can be measured if there is a fast enough gate. For terahertz radiation, femtosecond photoinjection of free carriers into a semiconductor in the presence of the terahertz radiation can serve as the gate. For visible or infrared radiation, attosecond photoionization of a gas target in the presence of the optical field is a direct analogue. Here, we show that nonlinear optical mixing in a medium in which attosecond pulses are being generated can also be used to measure the time-dependent field of an optical pulse. The gate is the phase accumulated by the recollision electron during the subcycle time interval between ionization and recombination. We show that the instantaneous field of an unknown pulse is imprinted onto the deflection of the attosecond extreme ultraviolet pulse using an all-optical set-up with a bandwidth up to 1 PHz.

Fast Dynamical Decoupling of the Mølmer-Sørensen Entangling Gate.

PubMed

Manovitz, Tom; Rotem, Amit; Shaniv, Ravid; Cohen, Itsik; Shapira, Yotam; Akerman, Nitzan; Retzker, Alex; Ozeri, Roee

2017-12-01

Engineering entanglement between quantum systems often involves coupling through a bosonic mediator, which should be disentangled from the systems at the operation's end. The quality of such an operation is generally limited by environmental and control noise. One of the prime techniques for suppressing noise is by dynamical decoupling, where one actively applies pulses at a rate that is faster than the typical time scale of the noise. However, for boson-mediated gates, current dynamical decoupling schemes require executing the pulses only when the boson and the quantum systems are disentangled. This restriction implies an increase of the gate time by a factor of sqrt[N], with N being the number of pulses applied. Here we propose and realize a method that enables dynamical decoupling in a boson-mediated system where the pulses can be applied while spin-boson entanglement persists, resulting in an increase in time that is at most a factor of π/2, independently of the number of pulses applied. We experimentally demonstrate the robustness of our entangling gate with fast dynamical decoupling to σ_{z} noise using ions in a Paul trap.

Experimental study of atmospheric-pressure micro-plasmas for the ambient sampling of conductive materials

NASA Astrophysics Data System (ADS)

Duan, Zhengchao; He, Feng; Si, Xinlu; Bradley, James W.; Ouyang, Jiting

2018-02-01

Conductive solid material sampling by micro-plasma under ambient atmosphere was studied experimentally. A high-voltage pulse generator was utilized to drive discharge between a tungsten needle and metal samples. The effects of pulse width on discharge, micro-plasma and sampling were investigated. The electrical results show that two discharge current pulses can be formed in one voltage pulse. The duration of the first current pulse is of the order of 100 ns. The duration of the second current pulse depends on the width of the voltage pulse. The electrical results also show that arc micro-plasma was generated during both current pulses. The results of the emission spectra of different sampled materials indicate that the relative emission intensity of elemental metal ions will increase with pulse width. The excitation temperature and electron density of the arc micro-plasmas increase with the voltage pulse width, which contributes to the increase of relative emission intensity of metal ions. The optical images and energy dispersive spectroscopy results of the sampling spots on metal surfaces indicate that discharge with a short voltage pulse can generate a small sputtering crater.

Hybrid Pulsed Nd:YAG Laser

NASA Astrophysics Data System (ADS)

Miller, Sawyer; Trujillo, Skyler; Fort Lewis College Laser Group Team

This work concerns the novel design of an inexpensive pulsed Nd:YAG laser, consisting of a hybrid Kerr Mode Lock (KLM) and Q-switch pulse. The two pulse generation systems work independently, non simultaneously of each other, thus generating the ability for the user to easily switch between ultra-short pulse widths or large energy density pulses. Traditionally, SF57 glass has been used as the Kerr medium. In this work, novel Kerr mode-locking mediums are being investigated including: tellurite compound glass (TeO2), carbon disulfide (CS2), and chalcogenide glass. These materials have a nonlinear index of refraction orders of magnitude,(n2), larger than SF57 glass. The Q-switched pulse will utilize a Pockels cell. As the two pulse generation systems cannot be operated simultaneously, the Pockels cell and Kerr medium are attached to kinematic mounts, allowing for quick interchange between systems. Pulse widths and repetition rates will vary between the two systems. A goal of 100 picosecond pulse widths are desired for the mode-locked system. A goal of 10 nanosecond pulse widths are desired for the Q-switch system, with a desired repetition rate of 50 Hz. As designed, the laser will be useful in imaging applications.

Performance benefits from pulsed laser heating in heat assisted magnetic recording

NASA Astrophysics Data System (ADS)

Xu, B. X.; Cen, Z. H.; Goh, J. H.; Li, J. M.; Toh, Y. T.; Zhang, J.; Ye, K. D.; Quan, C. G.

2014-05-01

Smaller cross track thermal spot size and larger down track thermal gradient are desired for increasing the density of heat assisted magnetic recording. Both parameters are affected significantly by the thermal energy accumulation and diffusion in the recording media. Pulsed laser heating is one of the ways to reduce the thermal diffusion. In this paper, we describe the benefits from the pulsed laser heating such as the dependences of the cross track thermal width, down track thermal gradient, the required laser pulse/average powers, and the transducer temperature rise on the laser pulse width at different media thermal properties. The results indicate that as the pulse width decreases, the thermal width decreases, the thermal gradient increases, the required pulse power increases and the average power decreases. For shorter pulse heating, the effects of the medium thermal properties on the thermal performances become weaker. This can greatly relax the required thermal properties of the media. The results also show that the pulsed laser heating can effectively reduce the transducer temperature rise and allow the transducer to reach its "dynamically" stable temperature more quickly.

Sub-nanosecond ranging possibilities of optical radar at various signal levels and transmitted pulse widths

NASA Technical Reports Server (NTRS)

Poultney, S. K.

1971-01-01

The behavior of the photomultiplier is considered, as well as the method of derivation of the photomultiplier output pulse and its relation to the reflected light pulse width and amplitude, and the calibration of range precision and accuracy. Pulsed laser radars with light pulse widths of 30, 3, and 0.1 nanosec a considered, with the 0.1 nanosec system capable of highest precision in several modes of operation, including a high repetition rate, single photoelectron reception mode. An alternate calibration scheme using a fast, triggerable light pulser is described in detail.

Energy scaling of the "heartbeat" pulse width of GRS 1915+105, IGR J17091-3624, and MXB 1730-335 from Rossi-XTE observations

NASA Astrophysics Data System (ADS)

Maselli, A.; Capitanio, F.; Feroci, M.; Massa, F.; Massaro, E.; Mineo, T.

2018-04-01

We investigate some key aspects of the "heartbeat" variability consisting of series of bursts with a slow rise and a fast decay, thus far detected only in GRS 1915+105, IGR J17091-3624, and MXB 1730-335. A previous analysis based on BeppoSAX data of GRS 1915+105 revealed a hard-X delay (HXD), that is a lag of the burst rise at higher energies with respect to lower ones; this leads to narrower pulse widths, w, at higher energies. We here use some light curves of Rossi-XTE observations of GRS 1915+105 for a deeper analysis of this effect and search for its presence in those extracted from some IGR J17091-3624 and MXB 1730-335 observations performed with the same satellite. Our results show that, at variance with GRS 1915+105, no HXD is evident in the light curves of MXB 1730-335 and only a marginal HXD may be argued for IGR J17091-3624. For GRS 1915+105 we find a decreasing trend of the pulse width with energy following a power law w = A ṡ E-s with an index s ≈ 0.8. Furthermore, we confirm the increase of the HXD with the recurrence time Trec of the bursts in each series that was already found in previous works using BeppoSAX data. Based on a spectral analysis of these three sources we conclude that the differences highlighted in the properties of the "heartbeat" variability are probably related to the different accreting compact object and the eventual presence of a corona in these binary interacting systems.

The CARIBU EBIS control and synchronization system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Clayton, E-mail: cdickerson@anl.gov; Peters, Christopher, E-mail: cdickerson@anl.gov

2015-01-09

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. Themore » control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.« less

Dynamics of short-pulse generation via spectral filtering from intensely excited gain-switched 1.55-μm distributed-feedback laser diodes.

PubMed

Chen, Shaoqiang; Yoshita, Masahiro; Sato, Aya; Ito, Takashi; Akiyama, Hidefumi; Yokoyama, Hiroyuki

2013-05-06

Picosecond-pulse-generation dynamics and pulse-width limiting factors via spectral filtering from intensely pulse-excited gain-switched 1.55-μm distributed-feedback laser diodes were studied. The spectral and temporal characteristics of the spectrally filtered pulses indicated that the short-wavelength component stems from the initial part of the gain-switched main pulse and has a nearly linear down-chirp of 5.2 ps/nm, whereas long-wavelength components include chirped pulse-lasing components and steady-state-lasing components. Rate-equation calculations with a model of linear change in refractive index with carrier density explained the major features of the experimental results. The analysis of the expected pulse widths with optimum spectral widths was also consistent with the experimental data.

A photodiode amplifier system for pulse-by-pulse intensity measurement of an x-ray free electron laser.

PubMed

Kudo, Togo; Tono, Kensuke; Yabashi, Makina; Togashi, Tadashi; Sato, Takahiro; Inubushi, Yuichi; Omodani, Motohiko; Kirihara, Yoichi; Matsushita, Tomohiro; Kobayashi, Kazuo; Yamaga, Mitsuhiro; Uchiyama, Sadayuki; Hatsui, Takaki

2012-04-01

We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-negative (PIN) photodiode for x-ray pulses from an x-ray free electron laser. A wide dynamic range (10(3)-10(11) photons/pulse) and long distance signal transmission (>100 m) were required for this measurement system. For this purpose, we developed charge-sensitive and shaping amplifiers, which can process charge pulses with a wide dynamic range and variable durations (ns-μs) and charge levels (pC-μC). Output signals from the amplifiers were transmitted to a data acquisition system through a long cable in the form of a differential signal. The x-ray pulse intensities were calculated from the peak values of the signals by a waveform fitting procedure. This system can measure 10(3)-10(9) photons/pulse of ~10 keV x-rays by direct irradiation of a silicon PIN photodiode, and from 10(7)-10(11) photons/pulse by detecting the x-rays scattered by a diamond film using the silicon PIN photodiode. This system gives a relative accuracy of ~10(-3) with a proper gain setting of the amplifiers for each measurement. Using this system, we succeeded in detecting weak light at the developmental phase of the light source, as well as intense light during lasing of the x-ray free electron laser. © 2012 American Institute of Physics

Excitation of atoms and ions in plasmas by ultra-short electromagnetic pulses

NASA Astrophysics Data System (ADS)

Astapenko, V. A.; Sakhno, S. V.; Svita, S. Yu; Lisitsa, V. S.

2017-02-01

The problem of atoms and ions diagnostics in rarefied and dense plasmas by ultrashort laser pulses (USP) is under consideration. The application of USP provides: 1) excitation from ground states due to their carrier frequency high enough, 2) penetration into optically dense media due to short pulses duration. The excitation from ground atomic states increases sharply populations of excited atomic states in contrast with standard laser induced fluorescence spectroscopy based on radiative transitions between excited atomic states. New broadening parameter in radiation absorption, namely inverse pulse duration time 1/τ appears in addition to standard line-shape width in the profile G(ω). The Lyman-beta absorption spectra for USP are calculated for Holtsmark static broadening mechanism. Excitation of highly charged H-like ions in hot plasmas is described by both Gaussian shapes for Doppler broadening and pulse spectrum resulting in analytical absorption line-shape. USP penetration into optically thick media and corresponding excitation probability are calculated. It is shown a great effect of USP duration on excitation probabilities in optically thick media. The typical situations for plasma diagnostics by USP are discussed in details.

Pulse Responses of the Conducting Polymer Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate)-Based Junctions

NASA Astrophysics Data System (ADS)

Zeng, Fei; Li, Xiaojun; Li, Sizhao; Chang, Chiating; Hu, Yuandong

2017-03-01

Pulse responses were studied for the heterojunctions within the structure of Ti/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)/Ti. The pulse response was found to resemble that of the action potential after the pulse width was modulated to a time scale of nanoseconds. Using the pulse as a stimulation protocol to simulate synaptic plasticity produced spike rate-dependent plasticity-like phenomena. Thus, the application scope of this conducting polymer-based memristor can be extended from a time scale of milliseconds to one of nanoseconds, depending on the requirement of neuromorphic circuits. Current oscillations were observed with a period within 100 ns. The mechanisms of the behavior response were analyzed according to memristor protocol. An interface barrier is thought to primarily account for the origin of the capacitive feature and the charge q, i.e., one of the basic characteristic of the memristor. The chain structure of this conducting polymer should primarily account for the origin of its inductive feature and the flux φ, i.e., another basic characteristic of the memristor.

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Joung-min, E-mail: cho.j.ad@m.titech.ac.jp; Akiyama, Yuto; Kakinuma, Tomoyuki

2013-10-15

We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulatedmore » characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V{sub G} above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.« less

Receiver design, performance analysis, and evaluation for space-borne laser altimeters and space-to-space laser ranging systems

NASA Technical Reports Server (NTRS)

Davidson, Frederic M.; Sun, Xiaoli; Field, Christopher T.

1995-01-01

Laser altimeters measure the time of flight of the laser pulses to determine the range of the target. The simplest altimeter receiver consists of a photodetector followed by a leading edge detector. A time interval unit (TIU) measures the time from the transmitted laser pulse to the leading edge of the received pulse as it crosses a preset threshold. However, the ranging error of this simple detection scheme depends on the received, pulse amplitude, pulse shape, and the threshold. In practice, the pulse shape and the amplitude are determined by the target target characteristics which has to be assumed unknown prior to the measurement. The ranging error can be improved if one also measures the pulse width and use the average of the leading and trailing edges (half pulse width) as the pulse arrival time. The ranging error becomes independent of the received pulse amplitude and the pulse width as long as the pulse shape is symmetric. The pulse width also gives the slope of the target. The ultimate detection scheme is to digitize the received waveform and calculate the centroid as the pulse arrival time. The centroid detection always gives unbiased measurement even for asymmetric pulses. In this report, we analyze the laser altimeter ranging errors for these three detection schemes using the Mars Orbital Laser Altimeter (MOLA) as an example.

Complete quantum control of a single quantum dot spin using ultrafast optical pulses.

PubMed

Press, David; Ladd, Thaddeus D; Zhang, Bingyang; Yamamoto, Yoshihisa

2008-11-13

A basic requirement for quantum information processing systems is the ability to completely control the state of a single qubit. For qubits based on electron spin, a universal single-qubit gate is realized by a rotation of the spin by any angle about an arbitrary axis. Driven, coherent Rabi oscillations between two spin states can be used to demonstrate control of the rotation angle. Ramsey interference, produced by two coherent spin rotations separated by a variable time delay, demonstrates control over the axis of rotation. Full quantum control of an electron spin in a quantum dot has previously been demonstrated using resonant radio-frequency pulses that require many spin precession periods. However, optical manipulation of the spin allows quantum control on a picosecond or femtosecond timescale, permitting an arbitrary rotation to be completed within one spin precession period. Recent work in optical single-spin control has demonstrated the initialization of a spin state in a quantum dot, as well as the ultrafast manipulation of coherence in a largely unpolarized single-spin state. Here we demonstrate complete coherent control over an initialized electron spin state in a quantum dot using picosecond optical pulses. First we vary the intensity of a single optical pulse to observe over six Rabi oscillations between the two spin states; then we apply two sequential pulses to observe high-contrast Ramsey interference. Such a two-pulse sequence realizes an arbitrary single-qubit gate completed on a picosecond timescale. Along with the spin initialization and final projective measurement of the spin state, these results demonstrate a complete set of all-optical single-qubit operations.

Extreme nonlinear terahertz electro-optics in diamond for ultrafast pulse switching

NASA Astrophysics Data System (ADS)

Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P.

2017-03-01

Polarization switching of picosecond laser pulses is a fundamental concept in signal processing [C. Chen and G. Liu, Annu. Rev. Mater. Sci. 16, 203 (1986); V. R. Almeida et al., Nature 431, 1081 (2004); and A. A. P. Pohl et al., Photonics Sens. 3, 1 (2013)]. Conventional switching devices rely on the electro-optical Pockels effect and work at radio frequencies. The ensuing gating time of several nanoseconds is a bottleneck for faster switches which is set by the performance of state-of-the-art high-voltage electronics. Here we show that by substituting the electric field of several kV/cm provided by modern electronics by the MV/cm field of a single-cycle THz laser pulse, the electro-optical gating process can be driven orders of magnitude faster, at THz frequencies. In this context, we introduce diamond as an exceptional electro-optical material and demonstrate a pulse gating time as fast as 100 fs using sub-cycle THz-induced Kerr nonlinearity. We show that THz-induced switching in the insulator diamond is fully governed by the THz pulse shape. The presented THz-based electro-optical approach overcomes the bandwidth and switching speed limits of conventional MHz/GHz electronics and establishes the ultrafast electro-optical gating technology for the first time in the THz frequency range. We finally show that the presented THz polarization gating technique is applicable for advanced beam diagnostics. As a first example, we demonstrate tomographic reconstruction of a THz pulse in three dimensions.

ONE SHAKE GATE FORMER

DOEpatents

Kalibjian, R.; Perez-Mendez, V.

1957-08-20

An improved circuit for forming square pulses having substantially short and precise durations is described. The gate forming circuit incorporates a secondary emission R. F. pentode adapted to receive input trigger pulses amd having a positive feedback loop comnected from the dynode to the control grid to maintain conduction in response to trigger pulses. A short circuited pulse delay line is employed to precisely control the conducting time of the tube and a circuit for squelching spurious oscillations is provided in the feedback loop.

Pulse charging of lead-acid traction cells

NASA Technical Reports Server (NTRS)

Smithrick, J. J.

1980-01-01

Pulse charging, as a method of rapidly and efficiently charging 300 amp-hour lead-acid traction cells for an electric vehicle application was investigated. A wide range of charge pulse current square waveforms were investigated and the results were compared to constant current charging at the time averaged pulse current values. Representative pulse current waveforms were: (1) positive waveform-peak charge pulse current of 300 amperes (amps), discharge pulse-current of zero amps, and a duty cycle of about 50%; (2) Romanov waveform-peak charge pulse current of 300 amps, peak discharge pulse current of 15 amps, and a duty of 50%; and (3) McCulloch waveform peak charge pulse current of 193 amps, peak discharge pulse current of about 575 amps, and a duty cycle of 94%. Experimental results indicate that on the basis of amp-hour efficiency, pulse charging offered no significant advantage as a method of rapidly charging 300 amp-hour lead-acid traction cells when compared to constant current charging at the time average pulse current value. There were, however, some disadvantages of pulse charging in particular a decrease in charge amp-hour and energy efficiencies and an increase in cell electrolyte temperature. The constant current charge method resulted in the best energy efficiency with no significant sacrifice of charge time or amp-hour output. Whether or not pulse charging offers an advantage over constant current charging with regard to the cell charge/discharge cycle life is unknown at this time.

Quantum hacking of two-way continuous-variable quantum key distribution using Trojan-horse attack

NASA Astrophysics Data System (ADS)

Ma, Hong-Xin; Bao, Wan-Su; Li, Hong-Wei; Chou, Chun

2016-08-01

We present a Trojan-horse attack on the practical two-way continuous-variable quantum key distribution system. Our attack mainly focuses on the imperfection of the practical system that the modulator has a redundancy of modulation pulse-width, which leaves a loophole for the eavesdropper inserting a Trojan-horse pulse. Utilizing the unique characteristics of two-way continuous-variable quantum key distribution that Alice only takes modulation operation on the received mode without any measurement, this attack allows the eavesdropper to render all of the final keys shared between the legitimate parties insecure without being detected. After analyzing the feasibility of the attack, the corresponding countermeasures are put forward. Project supported by the National Basic Research Program of China (Grant No. 2013CB338002) and the National Natural Science Foundation of China (Grant Nos. 11304397 and 61505261).

Precise delay measurement through combinatorial logic

NASA Technical Reports Server (NTRS)

Burke, Gary R. (Inventor); Chen, Yuan (Inventor); Sheldon, Douglas J. (Inventor)

2010-01-01

A high resolution circuit and method for facilitating precise measurement of on-chip delays for FPGAs for reliability studies. The circuit embeds a pulse generator on an FPGA chip having one or more groups of LUTS (the "LUT delay chain"), also on-chip. The circuit also embeds a pulse width measurement circuit on-chip, and measures the duration of the generated pulse through the delay chain. The pulse width of the output pulse represents the delay through the delay chain without any I/O delay. The pulse width measurement circuit uses an additional asynchronous clock autonomous from the main clock and the FPGA propagation delay can be displayed on a hex display continuously for testing purposes.

Effect of different methods of pulse width modulation on power losses in an induction motor

NASA Astrophysics Data System (ADS)

Gulyaev, Alexander; Fokin, Dmitrii; Shuharev, Sergey; Ten, Evgenii

2017-10-01

We consider the calculation of modulation power losses in a system “induction motor-inverter” for various pulse width modulation (PWM) methods of the supply voltage. Presented values of modulation power losses are the result of modeling a system “DC link - two-level three-phase voltage inverter - induction motor - load”. In this study the power losses in a system “induction motor - inverter” are computed, as well as losses caused by higher harmonics of PWM supply voltage, followed by definition of active power consumed by the DC link for a specified value mechanical power on the induction motor shaft. Mechanical power was determined by the rotation speed and the torque on the motor shaft in various quasi-sinusoidal supply voltage PWM modes. These calculations reveal the best coefficient of performance (COP) in a system of a variable frequency drive (VFD) with independent voltage inverter controlled by induction motor PWM.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

Secure distance ranging by electronic means

DOEpatents

Gritton, Dale G.

1992-01-01

A system for secure distance ranging between a reader 11 and a tag 12 wherein the distance between the two is determined by the time it takes to propagate a signal from the reader to the tag and for a responsive signal to return, and in which such time is random and unpredictable, except to the reader, even though the distance between the reader and tag remains the same. A random number (19) is sent from the reader and encrypted (26) by the tag into a number having 16 segments of 4 bits each (28). A first tag signal (31) is sent after such encryption. In response, a random width start pulse (13) is generated by the reader. When received in the tag, the width of the start pulse is measured (41) in the tag and a segment of the encrypted number is selected (42) in accordance with such width. A second tag pulse is generated at a time T after the start pulse arrives at the tag, the time T being dependent on the length of a variable time delay t.sub.v which is determined by the value of the bits in the selected segment of the encrypted number. At the reader, the total time from the beginning of the start pulse to the receipt of the second tag signal is measured (36, 37). The value of t.sub.v (21, 22, 23, 34) is known at the reader and the time T is subtracted (46) from the total time to find the actual propagation t.sub.p for signals to travel between the reader 11 and tag 12. The propagation time is then converted into distance (46).

Dynamics of retinal photocoagulation and rupture

NASA Astrophysics Data System (ADS)

Sramek, Christopher; Paulus, Yannis; Nomoto, Hiroyuki; Huie, Phil; Brown, Jefferson; Palanker, Daniel

2009-05-01

In laser retinal photocoagulation, short (<20 ms) pulses have been found to reduce thermal damage to the inner retina, decrease treatment time, and minimize pain. However, the safe therapeutic window (defined as the ratio of power for producing a rupture to that of mild coagulation) decreases with shorter exposures. To quantify the extent of retinal heating and maximize the therapeutic window, a computational model of millisecond retinal photocoagulation and rupture was developed. Optical attenuation of 532-nm laser light in ocular tissues was measured, including retinal pigment epithelial (RPE) pigmentation and cell-size variability. Threshold powers for vaporization and RPE damage were measured with pulse durations ranging from 1 to 200 ms. A finite element model of retinal heating inferred that vaporization (rupture) takes place at 180-190°C. RPE damage was accurately described by the Arrhenius model with activation energy of 340 kJ/mol. Computed photocoagulation lesion width increased logarithmically with pulse duration, in agreement with histological findings. The model will allow for the optimization of beam parameters to increase the width of the therapeutic window for short exposures.

Flash x-ray generator having a liquid-anode diode

NASA Astrophysics Data System (ADS)

Oizumi, Teiji; Sato, Eiichi; Shikoda, Arimitsu; Sagae, Michiaki; Takahashi, Kei; Tamakawa, Yoshiharu; Yanagisawa, Toru; Ojima, Hidenori; Takayama, Kazuyoshi; Fujiwara, Akihiro; Mitoya, Kanji

1995-05-01

The constructions and the fundamental studies of a flash x-ray generator having a liquid-anode diode are described. This flash x-ray generator consisted of the following essential components: a high-voltage power supply, a high-voltage pulser, a thyratron pulser as a trigger device, an oil diffusion pump, and a flash x-ray tube. The main condenser was negatively charged from 50 to 70 kV by the power supply, and the electric charges in the condenser were discharged to the x-ray tube after closing a gap switch by using the thyratron pulser. The flash x- ray tube was of a diode type having a mercury anode and a ferrite cathode. The pressure of the tube was primarily determined by the steam pressure of mercury as a function of temperature. The maximum output voltage from the pulser was about -1 times the charged voltage. The maximum tube voltage and current were approximately 60 kV and 3 kA, respectively, with a charged voltage of -60 kV and a space between the anode and cathode electrodes (AC space) of 2.0 mm. The pulse widths of flash x rays were about 50 ns, and the x-ray intensity measured by a thermoluminescence dosimeter had a value of about 2.5 (mu) C/kg at 0.3 m per pulse with a charged voltage of -70 kV and an AC space of 1.0 mm.

Applicability of post-ionization theory to laser-assisted field evaporation of magnetite

DOE PAGES

Schreiber, Daniel K.; Chiaramonti, Ann N.; Gordon, Lyle M.; ...

2014-12-15

Analysis of the mean Fe ion charge state from laser-assisted field evaporation of magnetite (Fe3O4) reveals unexpected trends as a function of laser pulse energy that break from conventional post-ionization theory for metals. For Fe ions evaporated from magnetite, the effects of post-ionization are partially offset by the increased prevalence of direct evaporation into higher charge states with increasing laser pulse energy. Therefore the final charge state is related to both the field strength and the laser pulse energy, despite those variables themselves being intertwined when analyzing at a constant detection rate. Comparison of data collected at different base temperaturesmore » also show that the increased prevalence of Fe2+ at higher laser energies is possibly not a direct thermal effect. Conversely, the ratio of 16O+:16O2+ is well-correlated with field strength and unaffected by laser pulse energy on its own, making it a better overall indicator of the field evaporation conditions than the mean Fe charge state. Plotting the normalized field strength versus laser pulse energy also elucidates a non-linear dependence, in agreement with previous observations on semiconductors, that suggests a field-dependent laser absorption efficiency. Together these observations demonstrate that the field evaporation process for laser-pulsed oxides exhibits fundamental differences from metallic specimens that cannot be completely explained by post-ionization theory. Further theoretical studies, combined with detailed analytical observations, are required to understand fully the field evaporation process of non-metallic samples.« less

Long-Lag, Wide-pulse Gamma-Ray Bursts

NASA Technical Reports Server (NTRS)

Norris, J. P.; Bonnell, J. T.; Kazanas, D.; Scargie, J. D.; Hakkila, J.; Giblin, T. W.

2005-01-01

The best available probe of the early phase of gamma-ray burst (GRB) jet attributes is the prompt gamma-ray emission, in which several intrinsic and extrinsic variables determine observed GRB pulse evolution, including at least: jet opening angle, profiles of Lorentz factor and matter/field density, distance of emission region from central source, and viewing angle. Bright, usually complex bursts have many narrow pulses that are difficult to model due to overlap. However, the relatively simple, long spectral lag, wide-pulse bursts may have simpler physics and are easier to model. We have analyzed the temporal and spectral behavior of wide pulses in 24 long-lag bursts from the BATSE sample, using a pulse model with two shape parameters - width and asymmetry - and the Band spectral model with three shape parameters. We find that pulses in long-lag bursts are distinguished both temporally and spectrally from those in bright bursts: the pulses in long spectral lag bursts are few in number, and approximately 100 times wider (10s of seconds), have systemtically lower peaks in nu*F(nu), harder low-energy spectra and softer high-energy spectra. These five pulse descriptors are essentially uncorrelated for our long-lag sample, suggesting that at least approximately 5 parameters are needed to model burst temporal and spectral behavior, roughly commensurate with the theoretical phase space. However, we do find that pulse width is strongly correlated with spectral lag; hence these two parameters may be viewed as mutual surrogates. The prevalence of long-lag bursts near the BATSE trigger threshold, their predominantly low nu*F(nu) spectral peaks, and relatively steep upper power-law spectral indices indicate that Swiift will detect many such bursts.

A SONOS device with a separated charge trapping layer for improvement of charge injection

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Moon, Dong-Il; Ko, Seung-Won; Kim, Chang-Hoon; Kim, Jee-Yeon; Kim, Moon-Seok; Seol, Myeong-Lok; Moon, Joon-Bae; Choi, Ji-Min; Oh, Jae-Sub; Choi, Sung-Jin; Choi, Yang-Kyu

2017-03-01

A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory.

Complete Prevention of Dendrite Formation in Zn Metal Anodes by Means of Pulsed Charging Protocols.

PubMed

Garcia, Grecia; Ventosa, Edgar; Schuhmann, Wolfgang

2017-06-07

Zn metal as anode in rechargeable batteries, such as Zn/air or Zn/Ni, suffers from poor cyclability. The formation of Zn dendrites upon cycling is the key limiting step. We report a systematic study of the influence of pulsed electroplating protocols on the formation of Zn dendrites and in turn on strategies to completely prevent Zn dendrite formation. Because of the large number of variables in electroplating protocols, a scanning droplet cell technique was adapted as a high-throughput methodology in which a descriptor of the surface roughness can be in situ derived by means of electrochemical impedance spectroscopy. Upon optimizing the electroplating protocol by controlling nucleation, zincate ion depletion, and zincate ion diffusion, scanning electron microscopy and atomic force microscopy confirmed the growth of uniform and homogenous Zn deposits with a complete prevention of dendrite growth. The implementation of pulsed electroplating as the charging protocol for commercially available Ni-Zn batteries leads to substantially prolonged cyclability demonstrating the benefits of pulsed charging in Zn metal-based batteries.

Low-photon-number optical switch and AND/OR logic gates based on quantum dot-bimodal cavity coupling system.

PubMed

Ma, Shen; Ye, Han; Yu, Zhong-Yuan; Zhang, Wen; Peng, Yi-Wei; Cheng, Xiang; Liu, Yu-Min

2016-01-11

We propose a new scheme based on quantum dot-bimodal cavity coupling system to realize all-optical switch and logic gates in low-photon-number regime. Suppression of mode transmission due to the destructive interference effect is theoretically demonstrated by driving the cavity with two orthogonally polarized pulsed lasers at certain pulse delay. The transmitted mode can be selected by designing laser pulse sequence. The optical switch with high on-off ratio emerges when considering one driving laser as the control. Moreover, the AND/OR logic gates based on photon polarization are achieved by cascading the coupling system. Both proposed optical switch and logic gates work well in ultra-low energy magnitude. Our work may enable various applications of all-optical computing and quantum information processing.

Low-photon-number optical switch and AND/OR logic gates based on quantum dot-bimodal cavity coupling system

PubMed Central

Ma, Shen; Ye, Han; Yu, Zhong-Yuan; Zhang, Wen; Peng, Yi-Wei; Cheng, Xiang; Liu, Yu-Min

2016-01-01

We propose a new scheme based on quantum dot-bimodal cavity coupling system to realize all-optical switch and logic gates in low-photon-number regime. Suppression of mode transmission due to the destructive interference effect is theoretically demonstrated by driving the cavity with two orthogonally polarized pulsed lasers at certain pulse delay. The transmitted mode can be selected by designing laser pulse sequence. The optical switch with high on-off ratio emerges when considering one driving laser as the control. Moreover, the AND/OR logic gates based on photon polarization are achieved by cascading the coupling system. Both proposed optical switch and logic gates work well in ultra-low energy magnitude. Our work may enable various applications of all-optical computing and quantum information processing. PMID:26750557

Role of defects in laser-induced modifications of silica coatings and fused silica using picosecond pulses at 1053 nm: II Scaling laws and the density of precursors

DOE PAGES

Laurence, T. A.; Negres, R. A.; Ly, S.; ...

2017-06-22

Here, we investigate the role of defects in laser-induced damage of fused silica and of silica coatings produced by e-beam and PIAD processes which are used in damage resistant, multi-layer dielectric, reflective optics. We perform experiments using 1053 nm, 1–60 ps laser pulses with varying beam size, number of shots, and pulse widths in order to understand the characteristics of defects leading to laser-induced damage. This pulse width range spans a transition in mechanisms from intrinsic material ablation for short pulses to defect-dominated damage for longer pulses. We show that for pulse widths as short as 10 ps, laser-induced damagemore » properties of fused silica and silica films are dominated by isolated absorbers. The density of these precursors and their fluence dependence of damage initiation suggest a single photon process for initial energy absorption in these precursors. Higher density precursors that initiate close to the ablation threshold at shorter pulse widths are also observed in fused silica, whose fluence and pulse width scaling suggest a multiphoton initiation process. We also show that these initiated damage sites grow with subsequent laser pulses. We show that scaling laws obtained in more conventional ways depend on the beam size and on the definition of damage for ps pulses. For this reason, coupling scaling laws with the density of precursors are critical to understanding the damage limitations of optics in the ps regime.« less

Role of defects in laser-induced modifications of silica coatings and fused silica using picosecond pulses at 1053 nm: II Scaling laws and the density of precursors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laurence, T. A.; Negres, R. A.; Ly, S.

Here, we investigate the role of defects in laser-induced damage of fused silica and of silica coatings produced by e-beam and PIAD processes which are used in damage resistant, multi-layer dielectric, reflective optics. We perform experiments using 1053 nm, 1–60 ps laser pulses with varying beam size, number of shots, and pulse widths in order to understand the characteristics of defects leading to laser-induced damage. This pulse width range spans a transition in mechanisms from intrinsic material ablation for short pulses to defect-dominated damage for longer pulses. We show that for pulse widths as short as 10 ps, laser-induced damagemore » properties of fused silica and silica films are dominated by isolated absorbers. The density of these precursors and their fluence dependence of damage initiation suggest a single photon process for initial energy absorption in these precursors. Higher density precursors that initiate close to the ablation threshold at shorter pulse widths are also observed in fused silica, whose fluence and pulse width scaling suggest a multiphoton initiation process. We also show that these initiated damage sites grow with subsequent laser pulses. We show that scaling laws obtained in more conventional ways depend on the beam size and on the definition of damage for ps pulses. For this reason, coupling scaling laws with the density of precursors are critical to understanding the damage limitations of optics in the ps regime.« less

Diffusion measurement from observed transverse beam echoes

DOE PAGES

Sen, Tanaji; Fischer, Wolfram

2017-01-09

For this research, we study the measurement of transverse diffusion through beam echoes. We revisit earlier observations of echoes in RHIC and apply an updated theoretical model to these measurements. We consider three possible models for the diffusion coefficient and show that only one is consistent with measured echo amplitudes and pulse widths. This model allows us to parameterize the diffusion coefficients as functions of bunch charge. We demonstrate that echoes can be used to measure diffusion much quicker than present methods and could be useful to a variety of hadron synchrotrons.

Gate-Sensing the Potential Landscape of a GaAs Two-Dimensional Electron Gas

NASA Astrophysics Data System (ADS)

Croot, Xanthe; Mahoney, Alice; Pauka, Sebastian; Colless, James; Reilly, David; Watson, John; Fallahi, Saeed; Gardner, Geoff; Manfra, Michael; Lu, Hong; Gossard, Arthur

In situ dispersive gate sensors hold potential as a means of enabling the scalable readout of quantum dot arrays. Sensitive to quantum capacitance, dispersive sensors have been used to detect inter- and intra-dot transitions in GaAs double quantum dots, and can distinguish the spin states of singlet triplet qubits. In addition, the gate-sensing technique is likely of value in probing the physics of Majorana zero modes in nanowire devices. Beyond the readout signatures associated with charge and spin configurations of qubits, gate-sensing is sensitive to trapped charge in the potential landscape. Here, we report gate-sensing signals arising from tunnelling of electrons between puddles of trapped charge in a GaAs 2DEG. We examine these signals in a family of different devices with varying mobilities, and as a function of temperature and bias. Implications for qubit readout using the gate-sensing technique are discussed.

Charge immobilization of the voltage sensor in domain IV is independent of sodium current inactivation.

PubMed

Sheets, Michael F; Hanck, Dorothy A

2005-02-15

Recovery from fast inactivation in voltage-dependent Na+ channels is associated with a slow component in the time course of gating charge during repolarization (i.e. charge immobilization), which results from the slow movement of the S4 segments in domains III and IV (S4-DIII and S4-DIV). Previous studies have shown that the non-specific removal of fast inactivation by the proteolytic enzyme pronase eliminated charge immobilization, while the specific removal of fast inactivation (by intracellular MTSET modification of a cysteine substituted for the phenylalanine in the IFM motif, ICMMTSET, in the inactivation particle formed by the linker between domains III and IV) only reduced the amount of charge immobilization by nearly one-half. To investigate the molecular origin of the remaining slow component of charge immobilization we studied the human cardiac Na+ channel (hH1a) in which the outermost arginine in the S4-DIV, which contributes approximately 20% to total gating charge (Qmax), was mutated to a cysteine (R1C-DIV). Gating charge could be fully restored in R1C-DIV by exposure to extracellular MTSEA, a positively charged methanethiosulphonate reagent. The RIC-DIV mutation was combined with ICMMTSET to remove fast inactivation, and the gating currents of R1C-DIV-ICM(MTSET) were recorded before and after modification with MTSEAo. Prior to MTSEAo, the time course of the gating charge during repolarization (off-charge) was best described by a single fast time constant. After MTSEA, the off-charge had both fast and slow components, with the slow component accounting for nearly 35% of Qmax. These results demonstrate that the slow movement of the S4-DIV during repolarization is not dependent upon the normal binding of the inactivation particle.

[Loudness optimized registration of compound action potential in cochlear implant recipients].

PubMed

Berger, Klaus; Hocke, Thomas; Hessel, Horst

2017-11-01

Background Postoperative measurements of compound action potentials are not always possible due to the insufficient acceptance of the CI-recipients. This study investigated the impact of different parameters on the acceptance of the measurements. Methods Compound action potentials of 16 CI recipients were measured with different pulse-widths. Recipients performed a loudness rating at the potential thresholds with the different sequences. Results Compound action potentials obtained with higher pulse-widths were rated softer than those obtained with smaller pulse-widths. Conclusions Compound action potentials measured with higher pulse-widths generate a gap between loudest acceptable presentation level and potential threshold. This gap contributes to a higher acceptance of postoperative measurements. Georg Thieme Verlag KG Stuttgart · New York.

Indium gallium arsenide microwave power transistors

NASA Technical Reports Server (NTRS)

Johnson, Gregory A.; Kapoor, Vik J.; Shokrani, Mohsen; Messick, Louis J.; Nguyen, Richard

1991-01-01

Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.

The Gates, 1979-2005

ERIC Educational Resources Information Center

School Arts: The Art Education Magazine for Teachers, 2005

2005-01-01

One art critic called it pure Despite the mixed reviews of Christo and Jeanne-Claude's temporary art installation in New York's Central Park, the public reaction to The Gates was largely positive.The Gates consisted of 7,500 orange PVC frames straddling the park's walkways that varied in widths from 5 1/2 feet to 18 feet. Eight-foot-long ripstop…

Two-phase charge-coupled device

NASA Technical Reports Server (NTRS)

Kosonocky, W. F.; Carnes, J. E.

1973-01-01

A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.

Investigation of field induced trapping on floating gates

NASA Technical Reports Server (NTRS)

Gosney, W. M.

1975-01-01

The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

Effect of tendon vibration during wide-pulse neuromuscular electrical stimulation (NMES) on muscle force production in people with spinal cord injury (SCI).

PubMed

Bochkezanian, Vanesa; Newton, Robert U; Trajano, Gabriel S; Vieira, Amilton; Pulverenti, Timothy S; Blazevich, Anthony J

2018-02-13

Neuromuscular electrical stimulation (NMES) is commonly used in skeletal muscles in people with spinal cord injury (SCI) with the aim of increasing muscle recruitment and thus muscle force production. NMES has been conventionally used in clinical practice as functional electrical stimulation (FES), using low levels of evoked force that cannot optimally stimulate muscular strength and mass improvements, and thus trigger musculoskeletal changes in paralysed muscles. The use of high intensity intermittent NMES training using wide-pulse width and moderate-intensity as a strength training tool could be a promising method to increase muscle force production in people with SCI. However, this type of protocol has not been clinically adopted because it may generate rapid muscle fatigue and thus prevent the performance of repeated high-intensity muscular contractions in paralysed muscles. Moreover, superimposing patellar tendon vibration onto the wide-pulse width NMES has been shown to elicit further increases in impulse or, at least, reduce the rate of fatigue in repeated contractions in able-bodied populations, but there is a lack of evidence to support this argument in people with SCI. Nine people with SCI received two NMES protocols with and without superimposing patellar tendon vibration on different days (i.e. STIM and STIM+vib), which consisted of repeated 30 Hz trains of 58 wide-pulse width (1000 μs) symmetric biphasic pulses (0.033-s inter-pulse interval; 2 s stimulation train; 2-s inter-train interval) being delivered to the dominant quadriceps femoris. Starting torque was 20% of maximal doublet-twitch torque and stimulations continued until torque declined to 50% of the starting torque. Total knee extensor impulse was calculated as the primary outcome variable. Total knee extensor impulse increased in four subjects when patellar tendon vibration was imposed (59.2 ± 15.8%) but decreased in five subjects (- 31.3 ± 25.7%). However, there were no statistically significant differences between these sub-groups or between conditions when the data were pooled. Based on the present results there is insufficient evidence to conclude that patellar tendon vibration provides a clear benefit to muscle force production or delays muscle fatigue during wide-pulse width, moderate-intensity NMES in people with SCI. ACTRN12618000022268 . Date: 11/01/2018. Retrospectively registered.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

NASA Astrophysics Data System (ADS)

Liu, J.-W.; Liao, M.-Y.; Imura, M.; Watanabe, E.; Oosato, H.; Koide, Y.

2014-06-01

A Ta2O5/Al2O3 bilayer gate oxide with a high-dielectric constant (high-k) has been successfully applied to a hydrogenated-diamond (H-diamond) metal-insulator-semiconductor field effect transistor (MISFET). The Ta2O5 layer is prepared by a sputtering-deposition (SD) technique on the Al2O3 buffer layer fabricated by an atomic layer deposition (ALD) technique. The ALD-Al2O3 plays an important role to eliminate plasma damage for the H-diamond surface during SD-Ta2O5 deposition. The dielectric constants of the SD-Ta2O5/ALD-Al2O3 bilayer and single SD-Ta2O5 are as large as 12.7 and 16.5, respectively. The k value of the single SD-Ta2O5 in this study is in good agreement with that of the SD-Ta2O5 on oxygen-terminated diamond. The capacitance-voltage characteristic suggests low interfacial trapped charge density for the SD-Ta2O5/ALD-Al2O3/H-diamond MIS diode. The MISFET with a gate length of 4 µm has a drain current maximum and an extrinsic transconductance of -97.7 mA mm-1 (normalized by gate width) and 31.0 ± 0.1 mS mm-1, respectively. The effective mobility in the H-diamond channel layer is found to be 70.1 ± 0.5 cm2 V-1 s-1.

Plasma plume expansion dynamics in nanosecond Nd:YAG laserosteotome

NASA Astrophysics Data System (ADS)

Abbasi, Hamed; Rauter, Georg; Guzman, Raphael; Cattin, Philippe C.; Zam, Azhar

2018-02-01

In minimal invasive laser osteotomy precise information about the ablation process can be obtained with LIBS in order to avoid carbonization, or cutting of wrong types of tissue. Therefore, the collecting fiber for LIBS needs to be optimally placed in narrow cavities in the endoscope. To determine this optimal placement, the plasma plume expansion dynamics in ablation of bone tissue by the second harmonic of a nanosecond Nd:YAG laser at 532 nm has been studied. The laserinduced plasma plume was monitored in different time delays, from one nanosecond up to one hundred microseconds. Measurements were performed using high-speed gated illumination imaging. The expansion features were studied using illumination of the overall visible emission by using a gated intensified charged coupled device (ICCD). The camera was capable of having a minimum gate width (Optical FWHM) of 3 ns and the timing resolution (minimum temporal shift of the gate) of 10 ps. The imaging data were used to generate position-time data of the luminous plasma-front. Moreover, the velocity of the plasma plume expansion was studied based on the time-resolved intensity data. By knowing the plasma plume profile over time, the optimum position (axial distance from the laser spot) of the collecting fiber and optimal time delay (to have the best signal to noise ratio) in spatial-resolved and time-resolved laser-induced breakdown spectroscopy (LIBS) can be determined. Additionally, the function of plasma plume expansion could be used to study the shock wave of the plasma plume.

Verification of a SEU model for advanced 1-micron CMOS structures using heavy ions

NASA Technical Reports Server (NTRS)

Cable, J. S.; Carter, J. R.; Witteles, A. A.

1986-01-01

Modeling and test results are reported for 1 micron CMOS circuits. Analytical predictions are correlated with experimental data, and sensitivities to process and design variations are discussed. Unique features involved in predicting the SEU performance of these devices are described. The results show that the critical charge for upset exhibits a strong dependence on pulse width for very fast devices, and upset predictions must factor in the pulse shape. Acceptable SEU error rates can be achieved for a 1 micron bulk CMOS process. A thin retrograde well provides complete SEU immunity for N channel hits at normal incidence angle. Source interconnect resistance can be important parameter in determining upset rates, and Cf-252 testing can be a valuable tool for cost-effective SEU testing.

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

Optimal time-domain technique for pulse width modulation in power electronics

NASA Astrophysics Data System (ADS)

Mayergoyz, I.; Tyagi, S.

2018-05-01

Optimal time-domain technique for pulse width modulation is presented. It is based on exact and explicit analytical solutions for inverter circuits, obtained for any sequence of input voltage rectangular pulses. Two optimal criteria are discussed and illustrated by numerical examples.

Pulse width and height modulation for multi-level resistance in bi-layer TaOx based RRAM

NASA Astrophysics Data System (ADS)

Alamgir, Zahiruddin; Beckmann, Karsten; Holt, Joshua; Cady, Nathaniel C.

2017-08-01

Mutli-level switching in resistive memory devices enables a wide range of computational paradigms, including neuromorphic and cognitive computing. To this end, we have developed a bi-layer tantalum oxide based resistive random access memory device using Hf as the oxygen exchange layer. Multiple, discrete resistance levels were achieved by modulating the RESET pulse width and height, ranging from 2 kΩ to several MΩ. For a fixed pulse height, OFF state resistance was found to increase gradually with the increase in the pulse width, whereas for a fixed pulse width, the increase in the pulse height resulted in drastic changes in resistance. Resistive switching in these devices transitioned from Schottky emission in the OFF state to tunneling based conduction in the ON state, based on I-V curve fitting and temperature dependent current measurements. These devices also demonstrated endurance of more than 108 cycles with a satisfactory Roff/Ron ratio and retention greater than 104 s.

Wedge-shaped slice-selective adiabatic inversion pulse for controlling temporal width of bolus in pulsed arterial spin labeling

PubMed Central

Guo, Jia; Buxton, Richard B.; Wong, Eric C.

2015-01-01

Purpose In pulsed arterial spin labeling (PASL) methods, arterial blood is labeled via inverting a slab with uniform thickness, resulting in different temporal widths of boluses in vessels with different flow velocities. This limits the temporal resolution and signal-to-noise ratio (SNR) efficiency gains in PASL-based methods intended for high temporal resolution and SNR efficiency, such as Turbo-ASL and Turbo-QUASAR. Theory and Methods A novel wedge-shaped (WS) adiabatic inversion pulse is developed by adding in-plane gradient pulses to a slice-selective (SS) adiabatic inversion pulse to linearly modulate the inversion thicknesses at different locations while maintaining the adiabatic properties of the original pulse. A hyperbolic secant (HS) based WS inversion pulse was implemented. Its performance was tested in simulations, phantom and human experiments, and compared to an SS HS inversion pulse. Results Compared to the SS inversion pulse, the WS inversion pulse is capable of inducing different inversion thicknesses at different locations. It can be adjusted to generate a uniform temporal width of boluses in arteries at locations with different flow velocities. Conclusion The WS inversion pulse can be used to control the temporal widths of labeled boluses in PASL experiments. This should benefit PASL experiments by maximizing labeling duty cycle, and improving temporal resolution and SNR efficiency. PMID:26451521

Non-iterative characterization of few-cycle laser pulses using flat-top gates.

PubMed

Selm, Romedi; Krauss, Günther; Leitenstorfer, Alfred; Zumbusch, Andreas

2012-03-12

We demonstrate a method for broadband laser pulse characterization based on a spectrally resolved cross-correlation with a narrowband flat-top gate pulse. Excellent phase-matching by collinear excitation in a microscope focus is exploited by degenerate four-wave mixing in a microscope slide. Direct group delay extraction of an octave spanning spectrum which is generated in a highly nonlinear fiber allows for spectral phase retrieval. The validity of the technique is supported by the comparison with an independent second-harmonic fringe-resolved autocorrelation measurement for an 11 fs laser pulse.

Safe Operation and Alignment of the Variable Pulse Width Laser at the US Army Research Laboratory

DTIC Science & Technology

2016-02-01

that the stored lamp parameters match the desired flashlamp operating parameters. Then go back to the main menu and press “B” to select the desired...operating the laser at a high voltage, either press “STOP” on the flashlamp controller to discharge the capacitors or fire the laser a few times at

EVOLUTION OF FAST MAGNETOACOUSTIC PULSES IN RANDOMLY STRUCTURED CORONAL PLASMAS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, D.; Li, B.; Pascoe, D. J.

2015-02-01

We investigate the evolution of fast magnetoacoustic pulses in randomly structured plasmas, in the context of large-scale propagating waves in the solar atmosphere. We perform one-dimensional numerical simulations of fast wave pulses propagating perpendicular to a constant magnetic field in a low-β plasma with a random density profile across the field. Both linear and nonlinear regimes are considered. We study how the evolution of the pulse amplitude and width depends on their initial values and the parameters of the random structuring. Acting as a dispersive medium, a randomly structured plasma causes amplitude attenuation and width broadening of the fast wavemore » pulses. After the passage of the main pulse, secondary propagating and standing fast waves appear. Width evolution of both linear and nonlinear pulses can be well approximated by linear functions; however, narrow pulses may have zero or negative broadening. This arises because narrow pulses are prone to splitting, while broad pulses usually deviate less from their initial Gaussian shape and form ripple structures on top of the main pulse. Linear pulses decay at an almost constant rate, while nonlinear pulses decay exponentially. A pulse interacts most efficiently with a random medium with a correlation length of about half of the initial pulse width. This detailed model of fast wave pulses propagating in highly structured media substantiates the interpretation of EIT waves as fast magnetoacoustic waves. Evolution of a fast pulse provides us with a novel method to diagnose the sub-resolution filamentation of the solar atmosphere.« less

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

NASA Astrophysics Data System (ADS)

Li, Qian; Li, Shilong; Yang, Dehua; Su, Wei; Wang, Yanchun; Zhou, Weiya; Liu, Huaping; Xie, Sishen

2017-10-01

The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO2 dielectric. The results showed that the organic-modified SiO2 dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO2 dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO2 allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO2 dielectric although the thickness of OTS layer is only ˜2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.

Piezo-phototronic Boolean logic and computation using photon and strain dual-gated nanowire transistors.

PubMed

Yu, Ruomeng; Wu, Wenzhuo; Pan, Caofeng; Wang, Zhaona; Ding, Yong; Wang, Zhong Lin

2015-02-04

Using polarization charges created at the metal-cadmium sulfide interface under strain to gate/modulate electrical transport and optoelectronic processes of charge carriers, the piezo-phototronic effect is applied to process mechanical and optical stimuli into electronic controlling signals. The cascade nanowire networks are demonstrated for achieving logic gates, binary computations, and gated D latches to store information carried by these stimuli. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design of power electronics for TVC EMA systems

NASA Technical Reports Server (NTRS)

Nelms, R. Mark

1993-01-01

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

NASA Astrophysics Data System (ADS)

Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

2009-11-01

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

2006-01-01

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

Prelaunch testing of the laser geodynamic satellite (LAGEOS)

NASA Technical Reports Server (NTRS)

Fitzmaurice, M. W.; Minott, P. O.; Abshire, J. B.; Rowe, H. E.

1977-01-01

The LAGEOS was extensively tested optically prior to launch. The measurement techniques used are described and resulting data is presented. Principal emphasis was placed on pulse spreading characteristics, range correction for center of mass tracking, and pulse distortion due to coherent effects. A mode-locked freqeuncy doubled Nd:YAG laser with a pulse width of about 60 ps was used as the ranging transmitter and a crossfield photo-multiplier was used in the receiver. High speed sampling electronics were employed to increase receiver bandwidth. LAGEOS reflected pulses typically had a width of 250 ps with a variability in the range correction of less than 2 mm rms. Pulse distortion due to coherent effects was inferred from average waveforms and appears to introduce less than + or - 50 ps jitter in the location of the pulse peak. Analytic results on this effect based on computer simulations are also presented. Theoretical and experimental data on the lidar cross section were developed in order to predict the strength of lidar echoes from the satellite. Cross section was measured using a large aperture laser collimating system to illuminate the LAGEOS. Reflected radiation far-field patterns were measured using the collimator in an autocollimating mode. Data were collected with an optical data digitzer and displayed as a three-dimensional plot of intensity versus the two far-field coordinates. Measurements were made at several wavelengths, for several types of polarizations, and as a function of satellite orientation.

Consequences of Phosphate-Arginine Complexes in Voltage-Gated Ion Channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Green, Michael E.

2008-11-01

There are two reasons for suspecting that phosphate complexes of arginine make it very difficult to derive gating charge in voltage gated potassium (and presumably sodium) channels from the motion of charged arginines. For one thing, the arginines should be complexed with phosphate, thereby neutralizing the charge, at least partially. Second, Li et al.(1) have shown that there is a large energy penalty for putting a charged arginine into a membrane. on channel gating current is generally attributed to S4 motion, in that the S4 segment of the voltage sensing domain (VSD) of these channels contains arginines, some of whichmore » are not (or at least not obviously) salt bridged, or otherwise charge compensated. There is, however, good reason to expect that there should be a complex of these arginines with phosphate, very probably from lipid headgroups. This has consequences for gating current; the complexed arginines, if they moved, would carry too much of the membrane along. This leads to the suggestion that an alternative to S4 physical motion, H+ transport, should be considered as a possible resolution of the apparent paradox. The consequences for a gating model that was proposed in our earlier work are discussed; there is one major difference in the model in the present form (a conformational change), but the proton cascade as gating current and the role of water in the closed state are reinforced.« less

Analysis of a photon assisted field emission device

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Lau, Y. Y.; McGregor, D. S.

2000-07-01

A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ("density modulation") at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel-Kramers-Brillouin and Airy function approach to solving Schrödinger's equation. Band bending and an approximation to the exchange-correlation effects on the image charge potential are included for an array of hyperbolic emitters with a distribution in tip radii and work function. For a simple relationship between the incident photon flux and the resultant electron density at the emission site, an estimation of the tunneling current is made. An example of the operation and design of such a photon-assisted field emission device is given.

Implementing conventional logic unconventionally: photochromic molecular populations as registers and logic gates.

PubMed

Chaplin, J C; Russell, N A; Krasnogor, N

2012-07-01

In this paper we detail experimental methods to implement registers, logic gates and logic circuits using populations of photochromic molecules exposed to sequences of light pulses. Photochromic molecules are molecules with two or more stable states that can be switched reversibly between states by illuminating with appropriate wavelengths of radiation. Registers are implemented by using the concentration of molecules in each state in a given sample to represent an integer value. The register's value can then be read using the intensity of a fluorescence signal from the sample. Logic gates have been implemented using a register with inputs in the form of light pulses to implement 1-input/1-output and 2-input/1-output logic gates. A proof of concept logic circuit is also demonstrated; coupled with the software workflow describe the transition from a circuit design to the corresponding sequence of light pulses. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

Transistor-based particle detection systems and methods

DOEpatents

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

2015-06-09

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

NASA Astrophysics Data System (ADS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-03-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Ultrafast entanglement of trapped ions

NASA Astrophysics Data System (ADS)

Neyenhuis, Brian; Johnson, Kale; Mizrahi, Jonathan; Wong-Campos, David; Monroe, Christopher

2014-05-01

We have demonstrated ultrafast spin-motion entanglement of a single atomic ion using a short train of intense laser pulses. This pulse train gives the ion a spin-dependent kick where each spin state receives a discrete momentum kick in opposite directions. Using a series of these spin-dependent kicks we can realize a two qubit gate. In contrast to gates using spectroscopically resolved motional sidebands, these gates may be performed faster than the trap oscillation period, making them potentially less sensitive to noise. Additionally this gate is temperature insensitive and does not require the ions to be cooled to the Lamb-Dicke limit. We show that multiple kicks can be strung together to create a ``Schrodinger cat'' like state, where the large separation between the two parts of the wavepacket allow us to accumulate the phase shift necessary for a gate in a shorter amount of time. We will present a realistic pulse scheme for a two ion gate, and our progress towards its realization. This work is supported by grants from the U.S. Army Research Office with funding from the DARPA OLE program, IARPA, and the MURI program; and the NSF Physics Frontier Center at JQI.

Complex Instruction Set Quantum Computing

NASA Astrophysics Data System (ADS)

Sanders, G. D.; Kim, K. W.; Holton, W. C.

1998-03-01

In proposed quantum computers, electromagnetic pulses are used to implement logic gates on quantum bits (qubits). Gates are unitary transformations applied to coherent qubit wavefunctions and a universal computer can be created using a minimal set of gates. By applying many elementary gates in sequence, desired quantum computations can be performed. This reduced instruction set approach to quantum computing (RISC QC) is characterized by serial application of a few basic pulse shapes and a long coherence time. However, the unitary matrix of the overall computation is ultimately a unitary matrix of the same size as any of the elementary matrices. This suggests that we might replace a sequence of reduced instructions with a single complex instruction using an optimally taylored pulse. We refer to this approach as complex instruction set quantum computing (CISC QC). One trades the requirement for long coherence times for the ability to design and generate potentially more complex pulses. We consider a model system of coupled qubits interacting through nearest neighbor coupling and show that CISC QC can reduce the time required to perform quantum computations.

Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

NASA Astrophysics Data System (ADS)

Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

2017-11-01

This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

Atmosphere Issues in Detection of Explosives and Organic Residues

DTIC Science & Technology

2009-01-01

sensitivity “false posi Fi ores are then c diagonal of th o itself. How null. Distanc fact that differ 8. Resultant mat valuating the perator Chara ly...consid 3. EXPE used in order ver Operator Ch l_figure.asp?img e A represen .0. This mean re of merit (th extreme case, ositive or a fa lutions, and si... detector gate width is 50 μsec and is delayed 40 ns after the laser, while the nanosecond spectra has a gate width of 10 μsec and is delayed 50 ns after

SUPPRESSION OF AFTERPULSING IN PHOTOMULTIPLIERS BY GATING THE PHOTOCATHODE

EPA Science Inventory

A number of gating schemes to minimize the long-term afterpulse signal in photomultipliers have been evaluated. Blocking the excitation pulse by gating the photocathode was found to reduce the gate-on afterpulse background by a factor of 230 over that for nongated operation. Thi...

METHOD AND APPARATUS FOR PULSING A CHARGED PARTICLE BEAM

DOEpatents

Aaland, K.; Kuenning, R.W.; Harmon, R.K.

1961-05-01

A system is offered for pulsing a continuous beam of charged particles to form beam pulses that are consistently rectangular and of precise time durations which may be varied over an extremely wide range at a widely variable range of repetition rates. The system generally comprises spaced deflection plates on opposite sides of a beam axis in between which a unidirectional bias field is established to deflect the beam for impingement on an off-axis collector. The bias field is periodically neutralized by the application of fast rise time substantially rectangular pulses to one of the deflection plates in opposition to the bias field and then after a time delay to the other deflection plate in aiding relation to the bias field and during the flat crest portion of the bias opposing pulses. The voltage distribution of the resulting deflection field then includes neutral or zero portions which are of symmetrical substantially rectangular configuration relative to time and during which the beam axially passes the collector in the form of a substantially rectangular beam pulse.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

NASA Technical Reports Server (NTRS)

Edmonds, L. D.

2016-01-01

Because advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

A compact, low jitter, nanosecond rise time, high voltage pulse generator with variable amplitude.

PubMed

Mao, Jiubing; Wang, Xin; Tang, Dan; Lv, Huayi; Li, Chengxin; Shao, Yanhua; Qin, Lan

2012-07-01

In this paper, a compact, low jitter, nanosecond rise time, command triggered, high peak power, gas-switch pulse generator system is developed for high energy physics experiment. The main components of the system are a high voltage capacitor, the spark gap switch and R = 50 Ω load resistance built into a structure to obtain a fast high power pulse. The pulse drive unit, comprised of a vacuum planar triode and a stack of avalanche transistors, is command triggered by a single or multiple TTL (transistor-transistor logic) level pulses generated by a trigger pulse control unit implemented using the 555 timer circuit. The control unit also accepts user input TTL trigger signal. The vacuum planar triode in the pulse driving unit that close the first stage switches is applied to drive the spark gap reducing jitter. By adjusting the charge voltage of a high voltage capacitor charging power supply, the pulse amplitude varies from 5 kV to 10 kV, with a rise time of <3 ns and the maximum peak current up to 200 A (into 50 Ω). The jitter of the pulse generator system is less than 1 ns. The maximum pulse repetition rate is set at 10 Hz that limited only by the gas-switch and available capacitor recovery time.

Investigation of ionization-induced electron injection in a wakefield driven by laser inside a gas cell

DOE PAGES

Audet, T. L.; Hansson, M.; Lee, P.; ...

2016-02-16

Ionization-induced electron injection was investigated experimentally by focusing a driving laser pulse with a maximum normalized potential of 1.2 at different positions along the plasma density profile inside a gas cell, filled with a gas mixture composed of 99%H 2+1%N 2. Changing the laser focus position relative to the gas cell entrance controls the accelerated electron bunch properties, such as the spectrum width, maximum energy, and accelerated charge. Simulations performed using the 3D particle-in-cell code WARP with a realistic density profile give results that are in good agreement with the experimental ones. Lastly, we discuss the interest of this regimemore » for optimizing the bunch charge in a selected energy window.« less

Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

DTIC Science & Technology

2015-02-01

executed with SolidWorks Flow Simulation , a computational fluid-dynamics code. The graph in Fig. 2 shows the timing and amplitudes of power pulses...defined a convective flow of air perpendicular to the bottom surface of the mounting plate, with a velocity of 10 ft/s. The thermal simulations were...Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module by Gregory K Ovrebo ARL-TR-7210

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter

NASA Astrophysics Data System (ADS)

Michele, Simone; Sammarco, Paolo; d'Errico, Michele

2016-08-01

We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.

Kinetics and Chemistry of Ionization Wave Discharges Propagating Over Dielectric Surfaces

NASA Astrophysics Data System (ADS)

Petrishchev, Vitaly

Experimental studies of near-surface ionization wave electric discharges generated by high peak voltage (20-30 kV), nanosecond duration pulses (full width at half-maximum 50-100 ns) of positive and negative polarity and propagating over dielectric surfaces have been performed. A novel way to sustain diffuse, reproducible, ns pulse surface plasmas at a liquid-vapor interface is demonstrated at buffer gas pressures ranging from 10 to 200 Torr. Generation of surface ionization waves well reproduced shot-to-shot and sustaining diffuse near-surface plasmas is one of the principal advantages of the use of ns pulse discharge waveforms. This makes possible characterization of these plasmas in repetitively pulsed experiments. Numerous applications of these plasmas include low-temperature plasma assisted combustion, plasma fuel reforming, plasma flow control, plasma materials processing, agriculture, biology, and medicine. The objectives of the present work are (i) to demonstrate that surface ionization wave discharge plasmas sustained at a liquid-vapor interface can be used as an experimental platform for studies of near-surface plasma chemical reaction kinetics, at the conditions when the interface acts as a high-yield source of radical species, and (ii) to obtain quantitative insight into dynamics, kinetics and chemistry of surface ionization wave discharges and provide experimental data for validation of kinetic models, to assess their predictive capability. Generation of the initial radical pool may trigger a number of plasma chemical processes leading to formation of a variety of stable product species, depending on the initial composition of the liquid and the buffer gas flow. One of the products formed and detected during surface plasma / liquid water interaction is hydroxyl radical, which is closely relevant to applications of plasmas for biology and medicine. The present work includes detailed studies of surface ionization wave discharges sustained in different buffer gases over solid and liquid dielectric surfaces, such as quartz, distilled water, saline solution, and alcohols, over a wide range of pressures. Specific experiments include: measurements of ionization wave speed; plasma emission imaging using a ns gate camera; detection of surface discharge plasma chemistry products using Fourier transform infrared absorption spectroscopy; surface charge dynamics on short (ns) and long (hundreds of mus) time scales; time-resolved electron density and electron temperature measurements in a ns pulse surface discharge in helium by Thomson scattering; spatially-resolved absolute OH and H atom concentration measurements in ns pulse discharges over distilled water by single-photon and two-photon Laser Induced Fluorescence; and schlieren imaging of perturbations generated by a ns pulse dielectric barrier discharge in a surface plasma actuator in quiescent atmospheric pressure air.

Fast activation of dihydropyridine-sensitive calcium channels of skeletal muscle. Multiple pathways of channel gating

PubMed Central

1996-01-01

Dihydropyridine (DHP) receptors of the transverse tubule membrane play two roles in excitation-contraction coupling in skeletal muscle: (a) they function as the voltage sensor which undergoes fast transition to control release of calcium from sarcoplasmic reticulum, and (b) they provide the conducting unit of a slowly activating L-type calcium channel. To understand this dual function of the DHP receptor, we studied the effect of depolarizing conditioning pulse on the activation kinetics of the skeletal muscle DHP-sensitive calcium channels reconstituted into lipid bilayer membranes. Activation of the incorporated calcium channel was imposed by depolarizing test pulses from a holding potential of -80 mV. The gating kinetics of the channel was studied with ensemble averages of repeated episodes. Based on a first latency analysis, two distinct classes of channel openings occurred after depolarization: most had delayed latencies, distributed with a mode of 70 ms (slow gating); a small number of openings had short first latencies, < 12 ms (fast gating). A depolarizing conditioning pulse to +20 mV placed 200 ms before the test pulse (-10 mV), led to a significant increase in the activation rate of the ensemble averaged-current; the time constant of activation went from tau m = 110 ms (reference) to tau m = 45 ms after conditioning. This enhanced activation by the conditioning pulse was due to the increase in frequency of fast open events, which was a steep function of the intermediate voltage and the interval between the conditioning pulse and the test pulse. Additional analysis demonstrated that fast gating is the property of the same individual channels that normally gate slowly and that the channels adopt this property after a sojourn in the open state. The rapid secondary activation seen after depolarizing prepulses is not compatible with a linear activation model for the calcium channel, but is highly consistent with a cyclical model. A six- state cyclical model is proposed for the DHP-sensitive Ca channel, which pictures the normal pathway of activation of the calcium channel as two voltage-dependent steps in sequence, plus a voltage-independent step which is rate limiting. The model reproduced well the fast and slow gating models of the calcium channel, and the effects of conditioning pulses. It is possible that the voltage-sensitive gating transitions of the DHP receptor, which occur early in the calcium channel activation sequence, could underlie the role of the voltage sensor and yield the rapid excitation-contraction coupling in skeletal muscle, through either electrostatic or allosteric linkage to the ryanodine receptors/calcium release channels. PMID:8882865

Influence of High Speed Repetition of Pulsed Streamer Discharge Produced by Polarity-Reversed Traveling Wave on NO Oxidation

NASA Astrophysics Data System (ADS)

Matsuda, Eiji; Kadowaki, Kazunori; Nishimoto, Sakae; Kitani, Isamu

This paper describes experimental results of NO removal from a simulated exhausted gas using a barrier-type plasma reactor subjected to reciprocal traveling wave voltage pulses. A pulse-forming cable was charged and then grounded at one end without any resistance, so that a traveling wave reciprocated along the cable with a change in its polarity because the traveling wave was negatively reflected at the grounded-end. Transient discharge light between point-plane electrodes with a glass barrier was observed using a gated image-intensifier. Photographs of the transient discharge light indicated that many streamer channels extended widely in the gap at the initial stage in the voltage oscillation, while only an intense discharge channel was observed at the latter stage. NO removal tests were carried out using the reciprocal pulse generator and a coaxial plasma reactor with a cylindrical glass-barrier. Results indicated that the discharges at the first and the second polarity reversals contributed largely to the oxidation reaction from NO into NO2, whereas the contribution of the subsequent discharges in the latter stage to NO removal was small.

Comparison of plume dynamics for laser ablated metals: Al and Ti

NASA Astrophysics Data System (ADS)

Bauer, William; Perram, Glen P.; Haugan, Timothy

2018-03-01

Emissive plumes from pulsed laser ablation of bulk Ti and Al from KrF laser irradiation at laser fluence up to 3.5 J/cm2 and argon background pressures of 0-1 Torr have been observed using gated intensified charged-coupled device imagery. Mass loss for Ti increases from 0.1 to 0.8 μg/pulse as pulse energy increase from 174 to 282 mJ/pulse (35-170 photons/atom) and decreases by ˜30% as pressure increases from vacuum to 1 Torr. Early plume energies are described by the free expansion velocities of 1.57 ± 0.02 and of 1.81 ± 0.07 cm/μs for Ti and Al, respectively, and up to 90% of the incoming laser energy can be attributed to the Al shock front in the mid-field. The ablation thresholds of 90 ± 27 mJ (1.12 ± 0.34 J/cm2) for Ti and 126 ± 13 mJ (1.58 ± 0.16 J/cm2) for Al also represent 30%-70% of the incident laser energy. The decrease in mass loss at higher pressures is attributed to plasma shielding of the target surface.

A universal steady state I-V relationship for membrane current

NASA Technical Reports Server (NTRS)

Chernyak, Y. B.; Cohen, R. J. (Principal Investigator)

1995-01-01

A purely electrical mechanism for the gating of membrane ionic channel gives rise to a simple I-V relationship for membrane current. Our approach is based on the known presence of gating charge, which is an established property of the membrane channel gating. The gating charge is systematically treated as a polarization of the channel protein which varies with the external electric field and modifies the effective potential through which the ions migrate in the channel. Two polarization effects have been considered: 1) the up or down shift of the whole potential function, and 2) the change in the effective electric field inside the channel which is due to familiar effect of the effective reduction of the electric field inside a dielectric body because of the presence of surface charges on its surface. Both effects are linear in the channel polarization. The ionic current is described by a steady state solution of the Nernst-Planck equation with the potential directly controlled by the gating charge system. The solution describes reasonably well the steady state and peak-current I-V relationships for different channels, and when applied adiabatically, explains the time lag between the gating charge current and the rise of the ionic current. The approach developed can be useful as an effective way to model the ionic currents in axons, cardiac cells and other excitable tissues.

Reactive nanolaminate pulsed-laser ignition mechanism: Modeling and experimental evidence of diffusion limited reactions

DOE PAGES

Yarrington, C. D.; Abere, M. J.; Adams, D. P.; ...

2017-04-03

We irradiated Al/Pt nanolaminates with a bilayer thickness (tb, width of an Al/Pt pair-layer) of 164 nm with single laser pulses with durations of 10 ms and 0.5 ms at 189 W/cm 2 and 1189 W/cm 2, respectively. The time to ignition was measured for each pulse, and shorter ignition times were observed for the higher power/shorter pulse width. While the shorter pulse shows uniform brightness, videographic images of the irradiated area shortly after ignition show a non-uniform radial brightness for the longer pulse. A diffusion-limited single step reaction mechanism was implemented in a finite element package to model themore » progress from reactants to products at both pulse widths. Finally, the model captures well both the observed ignition delay and qualitative observations regarding the non-uniform radial temperature.« less

Study of translational dynamics in molten polymer by variation of gradient pulse-width of PGSE.

PubMed

Stepišnik, Janez; Lahajnar, Gojmir; Zupančič, Ivan; Mohorič, Aleš

2013-11-01

Pulsed gradient spin echo is a method of measuring molecular translation. Changing Δ makes it sensitive to diffusion spectrum. Spin translation effects the buildup of phase structure during the application of gradient pulses as well. The time scale of the self-diffusion measurement shortens if this is taken into account. The method of diffusion spectrometry with variable δ is also less sensitive to artifacts caused by spin relaxation and internal gradient fields. Here the method is demonstrated in the case of diffusion spectrometry of molten polyethylene. The results confirm a model of constraint release in a system of entangled polymer chains as a sort of tube Rouse motion. Copyright © 2013 Elsevier Inc. All rights reserved.

Ignition Characteristics of Single-Walled Carbon Nanotubes (SWCNTs) Utilizing a Camera Flash for Distributed Ignition of Liquid Sprays (Preprint)

DTIC Science & Technology

2008-10-01

acoustic phenomenon. Our results indicate that the shorter pulse width (with lower energy/pulse) required ~30-35 mJ/pulse to initiate ignition of... acoustic behavior and some other novel phenomena associated with radiation absorption by SWCNTs. 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17...pressure level (SPL) from the photo acoustic phenomenon. Our results indicate that the shorter pulse width (with lower energy/pulse) required ~30-35

Tissue effects of Ho:YAG laser with varying fluences and pulse widths

NASA Astrophysics Data System (ADS)

Vari, Sandor G.; van der Veen, Maurits J.; Pergadia, Vani R.; Shi, Wei-Qiang; Duffy, J. T.; Weiss, Andrew B.; Fishbein, Michael C.; Grundfest, Warren S.

1994-02-01

We investigated the effect of varying fluence and pulse width on the ablation rate and consequent thermal damage of the Ho:YAG (2.130 micrometers ) laser. The rate of ablation on fresh bovine knee joint tissues, fibrous cartilage, hyaline cartilage, and bone in saline was determined after varying the fluence (160 - 640 J/cm2) and pulse width (150, 250, 450 microsecond(s) ec, FWHM) at a repetition rate of 2 Hz. A 400/440 micrometers fiber was used. The ablation rate increased linearly with the fluence. In fibrocartilage, different pulse durations generated significant changes in the ablation rates, but showed minor effects on hyaline cartilage and bone. The heat of ablation for all three tissue types decreased after lengthening the pulse.

Two-qubit logical operations in three quantum dots system.

PubMed

Łuczak, Jakub; Bułka, Bogdan R

2018-06-06

We consider a model of two interacting always-on, exchange-only qubits for which controlled phase (CPHASE), controlled NOT (CNOT), quantum Fourier transform (QFT) and SWAP operations can be implemented only in a few electrical pulses in a nanosecond time scale. Each qubit is built of three quantum dots (TQD) in a triangular geometry with three electron spins which are always kept coupled by exchange interactions only. The qubit states are encoded in a doublet subspace and are fully electrically controlled by a voltage applied to gate electrodes. The two qubit quantum gates are realized by short electrical pulses which change the triangular symmetry of TQD and switch on exchange interaction between the qubits. We found an optimal configuration to implement the CPHASE gate by a single pulse of the order 2.3 ns. Using this gate, in combination with single qubit operations, we searched for optimal conditions to perform the other gates: CNOT, QFT and SWAP. Our studies take into account environment effects and leakage processes as well. The results suggest that the system can be implemented for fault tolerant quantum computations.

Ultrafast entanglement of trapped ions

NASA Astrophysics Data System (ADS)

Neyenhuis, Brian; Mizrahi, Jonathan; Johnson, Kale; Monroe, Christopher

2013-05-01

We have demonstrated ultrafast spin-motion entanglement of a single atomic ion using a short train of intense laser pulses. This pulse train gives the ion a spin-dependent kick where each spin state receives a discrete momentum kick in opposite directions. Using a series of these spin-dependent kicks we can realize a two qubit gate. In contrast to gates using spectroscopically resolved motional sidebands, these gates may be performed faster than the trap oscillation period, making them potentially less sensitive to noise, independent of temperature, and more easily scalable to large crystals of ions. We show that multiple kicks can be strung together to create a ``Schrodinger cat'' like state, where the large separation between the two parts of the wavepacket allow us to accumulate the phase shift necessary for a gate in a shorter amount of time. We will present a realistic pulse scheme for a two ion gate, and our progress towards its realization. This work is supported by grants from the U.S. Army Research Office with funding from the DARPA OLE program, IARPA, and the MURI program; and the NSF Physics Frontier Center at JQI.

Observations of a bi-directional lightning leader producing an M-component

NASA Astrophysics Data System (ADS)

Kotovsky, D. A.; Uman, M. A.; Wilkes, R.; Carvalho, F. L.; Jordan, D. M.

2017-12-01

Lightning discharges to ground often exhibit millisecond-scale surges in the continuing currents following return strokes, called M-components. Relatively little is known regarding the source of M-component charge and the mechanisms by which that charge is transferred to ground. In this work, we seek to directly address these questions by presenting correlated high-speed video and Lightning Mapping Array (LMA) observations of a bi-directional leader that resulted in an M-component occurring in a rocket-and-wire triggered lightning flash. The observed leader initiated in the decayed remnants of a positive leader channel that had traversed virgin air approximately 90 msec prior. Three-dimensional locations and speeds of the photographed bi-directional leader and M-component processes are calculated by mapping video images to the observed LMA channel geometry. Both ends of the bi-directional leader exhibited speeds on the order of 2 x106 m sec-1 over 570 meters of the visible channel. Propagation of the luminosity wave from the in-cloud leader to ground ( 8.8 km channel length) exhibited appreciable dispersion, with rise-times (10-90%) increasing from 330 to 410 μsec and pulse-widths (half-maximum) increasing from 380 to 810 μsec - the M-component current pulse measured at ground-level exhibited a rise-time of 290 μsec and a pulse-width of 770 μsec. Group velocities of the luminosity wave have been calculated as a function of frequency, increasing from 2 x107 to 6 x107 m sec-1 over the dominant signal bandwidth (DC to 2 kHz). Additionally, multiple waves of luminosity are observed within the in-cloud channel, indicating nuanced wave phenomena possibly associated with reflection from the end of the leader channel and attachment with the main lightning channel carrying continuing current to ground.

Detection of chlorine with concentration of 0.18 kg/m{sup 3} in concrete by laser-induced breakdown spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugiyama, K.; Fujii, T.; Matsumura, T.

2010-05-01

The chlorine concentration in concrete samples was measured by laser-induced breakdown spectroscopy (LIBS). One or two pulsed second harmonic Nd:YAG lasers ({lambda}=532 nm) were used for the generation of laser-induced breakdown, and an intensified CCD camera, spectrometer, and optical bundle fiber were used for spectral measurement. To maximize the spectral intensity of the chlorine fluorescence line at a wavelength of 837.59 nm, the time delay between laser irradiation and spectral measurement, the time delay between the two laser pulses in double-pulse measurement, and the gate width of the spectral measurement were optimized. The linear relationship between the spectral intensity ofmore » the chlorine fluorescence line and the chlorine concentration was verified for pressed samples with chlorine concentrations from 0.18 to 5.4 kg/m{sup 3}. The signal-to-noise ratio was higher than 2 for the sample with a chlorine concentration of 0.18 kg/m{sup 3} (0.008 wt. %). Thus, a chlorine concentration of 0.6 kg/m{sup 3}, at which the reinforcing bars in concrete structures start to corrode, can be detected. These results show that LIBS is effective for the quantitative measurement of chlorine concentration in concrete with high sensitivity.« less

Effect of diatomic molecular properties on binary laser pulse optimizations of quantum gate operations.

PubMed

Zaari, Ryan R; Brown, Alex

2011-07-28

The importance of the ro-vibrational state energies on the ability to produce high fidelity binary shaped laser pulses for quantum logic gates is investigated. The single frequency 2-qubit ACNOT(1) and double frequency 2-qubit NOT(2) quantum gates are used as test cases to examine this behaviour. A range of diatomics is sampled. The laser pulses are optimized using a genetic algorithm for binary (two amplitude and two phase parameter) variation on a discretized frequency spectrum. The resulting trends in the fidelities were attributed to the intrinsic molecular properties and not the choice of method: a discretized frequency spectrum with genetic algorithm optimization. This is verified by using other common laser pulse optimization methods (including iterative optimal control theory), which result in the same qualitative trends in fidelity. The results differ from other studies that used vibrational state energies only. Moreover, appropriate choice of diatomic (relative ro-vibrational state arrangement) is critical for producing high fidelity optimized quantum logic gates. It is also suggested that global phase alignment imposes a significant restriction on obtaining high fidelity regions within the parameter search space. Overall, this indicates a complexity in the ability to provide appropriate binary laser pulse control of diatomics for molecular quantum computing. © 2011 American Institute of Physics

Waveform synthesizer

DOEpatents

Franks, L.A.; Nelson, M.A.

1979-12-07

The invention is a method by which an optical pulse of an arbitrary but defined shape may be transformed into a virtual multitude of optical or electrical output pulse shapes. Since the method is not limited to any particular input pulse shape, the output pulse shapes that can be generated thereby are virtually unlimited. Moreover, output pulse widths as narrow as about 0.1 nsec can be readily obtained since optical pulses of less than a few picoseconds are available for use as driving pulses. The range of output pulse widths obtainable is very large, the limiting factors being the driving source energy and the particular shape of the desired output pulse.

Acousto-optic modulation and opto-acoustic gating in piezo-optomechanical circuits

PubMed Central

Balram, Krishna C.; Davanço, Marcelo I.; Ilic, B. Robert; Kyhm, Ji-Hoon; Song, Jin Dong; Srinivasan, Kartik

2017-01-01

Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the RF carrier are mapped to the optical field. We also show opto-acoustic gating, in which the application of modulated optical pulses interferometrically gates the transmission of propagating acoustic pulses. The time-domain characteristics of this system under both pulsed RF and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modelled through the coupled mode equations of cavity optomechanics. PMID:28580373

Pulse stretcher for narrow pulses

NASA Technical Reports Server (NTRS)

Lindsey, R. S., Jr. (Inventor)

1974-01-01

A pulse stretcher for narrow pulses is presented. The stretcher is composed of an analog section for processing each arriving analog pulse and a digital section with logic for providing command signals to the gates and switches in the analog section.

Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hori, Masahiro, E-mail: hori@eng.u-toyama.ac.jp; Watanabe, Tokinobu; Ono, Yukinori

2015-01-26

To analyze the charge pumping (CP) sequence in detail, the source/drain electron current and the substrate hole current under the CP mode of transistors are simultaneously monitored in the time domain. Peaks are observed in both the electron and hole currents, which are, respectively, attributed to the electron emission from the interface defects and to the recombination with holes. The peak caused by the electron emission is found to consist of two components, strongly suggesting that the present time-domain measurement can enable us to resolve different kinds of interface defects. Investigating the correlation between the number of emitted and recombinedmore » electrons reveals that only one of the two components contributes to the CP current for the gate-pulse fall time from 6.25 × 10{sup −4} to 1.25 × 10{sup −2} s.« less

Electromagnetic pulse from supernovae. [model for old low-mass stars

NASA Technical Reports Server (NTRS)

Colgate, S. A.

1975-01-01

Upper and lower limits to the radiated electromagnetic pulse from a supernova are calculated assuming that the mass fraction of the matter expanding inside the dipole magnetic field shares energy and maintains the pressure balance in the process. A supernova model is described in which the explosion occurs in old low-mass stars containing less than 10% hydrogen in their ejecta and a remnant neutron star is produced. The analysis indicates that although the surface layer of a star of 1 g/cu thickness may be shock-accelerated to an energy factor of about 100 and may expand into the vacuum with an energy factor approaching 10,000, the equatorial magnetic field will retard this expansion so that the inner, more massive ejecta layers will effectively accelerate the presumed canonical dipole magnetic field to greater velocities than would the surface layer alone. A pulse of 10 to the 46th power ergs in a width of about 150 cm will result which will not be affected by circumstellar matter or electron self-radiation effects. It is shown that interstellar matter will attenuate the pulse, but that charge separation may reduce the attenuation and allow a larger pulse to escape.

Broadband supercontinuum generation with femtosecond pulse width in erbium-doped fiber laser (EDFL)

NASA Astrophysics Data System (ADS)

Rifin, S. N. M.; Zulkifli, M. Z.; Hassan, S. N. M.; Munajat, Y.; Ahmad, H.

2016-11-01

We demonstrate two flat plateaus and the low-noise spectrum of supercontinuum generation (SCG) in a highly nonlinear fiber (HNLF), injected by an amplified picosecond pulse seed of a carbon nanotube-based passively mode locked erbium-doped fiber laser. A broad spectrum of width approximately 1090 nm spanning the range 1130-2220 nm is obtained and the pulse width is compressed to the shorter duration of 70 fs. Variations of the injected peak power up to 33.78 kW into the HNLF are compared and the broad spectrum SCG profiles slightly expand for each of the injected peak powers. This straightforward configuration of SCG offers low output power and ultra-narrow femtosecond pulse width. The results facilitate the development of all fiber time-domain spectroscopy systems based on the photoconductive antenna technique.

Analysis of indium zinc oxide thin films by laser-induced breakdown spectroscopy

NASA Astrophysics Data System (ADS)

Popescu, A. C.; Beldjilali, S.; Socol, G.; Craciun, V.; Mihailescu, I. N.; Hermann, J.

2011-10-01

We have performed spectroscopic analysis of the plasma generated by Nd:YAG (λ = 266 nm) laser irradiation of thin indium zinc oxide films with variable In content deposited by combinatorial pulsed laser deposition on glass substrates. The samples were irradiated in 5 × 104 Pa argon using laser pulses of 5 ns duration and 10 mJ energy. The plasma emission spectra were recorded with an Echelle spectrometer coupled to a gated detector with different delays with respect to the laser pulse. The relative concentrations of indium and zinc were evaluated by comparing the measured spectra to the spectral radiance computed for a plasma in local thermal equilibrium. Plasma temperature and electron density were deduced from the relative intensities and Stark broadening of spectral lines of atomic zinc. Analyses at different locations on the deposited thin films revealed that the In/(In + Zn) concentration ratio significantly varies over the sample surface, from 0.4 at the borders to about 0.5 in the center of the film. The results demonstrate that laser-induced breakdown spectroscopy allows for precise and fast characterization of thin films with variable composition.

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eslami, E., E-mail: eeslami@iust.ac.ir; Barjasteh, A.; Morshedian, N.

2015-06-15

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown thatmore » applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.« less

A novel optical gating method for laser gated imaging

NASA Astrophysics Data System (ADS)

Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

2013-06-01

For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

Investigation of sensing mechanism and signal amplification in carbon nanotube based microfluidic liquid-gated transistors via pulsating gate bias.

PubMed

Wijaya, I Putu Mahendra; Nie, Tey Ju; Rodriguez, Isabel; Mhaisalkar, Subodh G

2010-06-07

The advent of a carbon nanotube liquid-gated transistor (LGFET) for biosensing applications allows the possibility of real-time and label-free detection of biomolecular interactions. The use of an aqueous solution as dielectric, however, has traditionally restricted the operating gate bias (VG) within |VG| < 1 V, due to the electrolysis of water. Here, we propose pulsed-gating as a facile method to extend the operation window of LGFETs to |VG| > 1 V. A comparison between simulation and experimental results reveals that at voltages in excess of 1 V, the LGFET sensing mechanism has a contribution from two factors: electrostatic gating as well as capacitance modulation. Furthermore, the large IDS drop observed in the |VG| > 1 V region indicates that pulsed-gating may be readily employed as a simple method to amplify the signal in the LGFET and pushes the detection limit down to attomolar concentration levels, an order of magnitude improvement over conventionally employed DC VG biasing.

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

NASA Astrophysics Data System (ADS)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

Super-resolution depth information from a short-wave infrared laser gated-viewing system by using correlated double sampling

NASA Astrophysics Data System (ADS)

Göhler, Benjamin; Lutzmann, Peter

2017-10-01

Primarily, a laser gated-viewing (GV) system provides range-gated 2D images without any range resolution within the range gate. By combining two GV images with slightly different gate positions, 3D information within a part of the range gate can be obtained. The depth resolution is higher (super-resolution) than the minimal gate shift step size in a tomographic sequence of the scene. For a state-of-the-art system with a typical frame rate of 20 Hz, the time difference between the two required GV images is 50 ms which may be too long in a dynamic scenario with moving objects. Therefore, we have applied this approach to the reset and signal level images of a new short-wave infrared (SWIR) GV camera whose read-out integrated circuit supports correlated double sampling (CDS) actually intended for the reduction of kTC noise (reset noise). These images are extracted from only one single laser pulse with a marginal time difference in between. The SWIR GV camera consists of 640 x 512 avalanche photodiodes based on mercury cadmium telluride with a pixel pitch of 15 μm. A Q-switched, flash lamp pumped solid-state laser with 1.57 μm wavelength (OPO), 52 mJ pulse energy after beam shaping, 7 ns pulse length and 20 Hz pulse repetition frequency is used for flash illumination. In this paper, the experimental set-up is described and the operating principle of CDS is explained. The method of deriving super-resolution depth information from a GV system by using CDS is introduced and optimized. Further, the range accuracy is estimated from measured image data.

Scaling effects of a graphene field effect transistor for radiation detection

NASA Astrophysics Data System (ADS)

Shollar, Zachary Frank

Radiation detectors based on graphene is a burgeoning research topic within the immense field of graphene research. Although papers continue to parse out their mysteries, the devices remain simplistic and small. New fabrication techniques have allowed for millimeter scale and larger monolayer graphene sheets to be grown with increasingly better quality. It is the goal of this thesis to investigate the scaling effects of millimeter scale graphene for radiation detection purposes. To this end, chemical vapor deposition grown monolayer graphene was purchased and transferred to Si/SiO2 substrates. The devices were patterned into simple rectangular strips varying in size from 3000 x 500 mum, 600 x 100 mum, 300 x 50 mum, and 60 x 11 mum. Four metal contacts were patterned onto each strip for electrical characterization. Two probe resistance measurements were performed on all four sizes, at three different lengths along the graphene. Using the field effect, the graphene resistance response was measured at 0 V back-gate voltage to obtain graphene resistivity on SiO2, which showed an increase in resistivity as the graphene strip size increased. Further, the response was measured for varying back-gate sweep ranges and speeds. This lead to the conclusion that strong p-doping was inherent in the graphene strips, as evidenced by charge neutral points located above +50 V. Strong hysteresis observed in those tests alluded to trapped charge having a major effect on voltage sweeps. Mobility values for the graphene strips were extracted from the back-gate voltage sweeps and fixed gate voltage stabilization curves. Mobility values overall were less than 400 cm2 V-1 s-1, and showed a modest increase in mobility as graphene length increased. Lastly, the largest graphene strip had a light response and radiation response measured. Light response showed a dependence on gate voltage magnitude that favored positive gate voltages, on an n-type Silicon substrate. A saturation effect above +15 V seemed apparent with a resistance increase of only 0.61% +/- 0.062% for +15 V to 0.69% +/- 0.097% for the +50 V back-gate. Response of the largest graphene strip size to forward facing alpha irradiation showed a modest 0.32% +/- 0.082% increase in response, for a -15 V back- gate. Overall, millimeter scale graphene field effect devices showed a light and radiation response, proving their viability. However, results showed fabricated samples had numerous defects and were far from pristine. Fabrication of pristine graphene strips at millimeter scales is of concern. Further work into large scale GFET patterning, testing at more length and width dimensions, and further investigating metal contact and carrier transport in millimeter scales is needed.

State dependent model predictive control for orbital rendezvous using pulse-width pulse-frequency modulated thrusters

NASA Astrophysics Data System (ADS)

Li, Peng; Zhu, Zheng H.; Meguid, S. A.

2016-07-01

This paper studies the pulse-width pulse-frequency modulation based trajectory planning for orbital rendezvous and proximity maneuvering near a non-cooperative spacecraft in an elliptical orbit. The problem is formulated by converting the continuous control input, output from the state dependent model predictive control, into a sequence of pulses of constant magnitude by controlling firing frequency and duration of constant-magnitude thrusters. The state dependent model predictive control is derived by minimizing the control error of states and control roughness of control input for a safe, smooth and fuel efficient approaching trajectory. The resulting nonlinear programming problem is converted into a series of quadratic programming problem and solved by numerical iteration using the receding horizon strategy. The numerical results show that the proposed state dependent model predictive control with the pulse-width pulse-frequency modulation is able to effectively generate optimized trajectories using equivalent control pulses for the proximity maneuvering with less energy consumption.