Electrical degradation of double-Schottky barrier in ZnO varistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Jinliang, E-mail: hejl@tsinghua.edu.cn; Cheng, Chenlu; Hu, Jun

2016-03-15

Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

Varistor piezotronics: Mechanically tuned conductivity in varistors

NASA Astrophysics Data System (ADS)

Baraki, Raschid; Novak, Nikola; Hofstätter, Michael; Supancic, Peter; Rödel, Jürgen; Frömling, Till

2015-08-01

The piezoelectric effect of ZnO has been investigated recently with the goal to modify metal/semiconductor Schottky-barriers and p-n-junctions by application of mechanical stress. This research area called "piezotronics" is so far focused on nano structured ZnO wires. At the same time, ZnO varistor materials are already widely utilized and may benefit from a piezotronic approach. In this instance, the grain boundary potential barriers in the ceramic can be tuned by mechanical stress. Polycrystalline varistors exhibit huge changes of resistivity upon applied electrical and mechanical fields and therefore offer descriptive model systems to study the piezotronic effect. If the influence of temperature is contemplated, our current mechanistic understanding can be interrogated and corroborated. In this paper, we present a physical model based on parallel conducting pathways. This affords qualitative and semi-quantitative rationalization of temperature dependent electrical properties. The investigations demonstrate that narrow conductive pathways contribute to the overall current, which becomes increasingly conductive with application of mechanical stress due to lowering of the barrier height. Rising temperature increases the thermionic current through the rest of the material with higher average potential barriers, which are hardly affected by the piezoelectric effect. Hence, relative changes in resistance due to application of stress are higher at low temperature.

Investigations into Recycling Zinc from Used Metal Oxide Varistors via pH Selective Leaching: Characterization, Leaching, and Residue Analysis

PubMed Central

Gutknecht, Toni; Gustafsson, Anna; Forsgren, Christer; Steenari, Britt-Marie

2015-01-01

Metal oxide varistors (MOVs) are a type of resistor with significantly nonlinear current-voltage characteristics commonly used in power lines to protect against overvoltages. If a proper recycling plan is developed MOVs can be an excellent source of secondary zinc because they contain over 90 weight percent zinc oxide. The oxides of antimony, bismuth, and to a lesser degree cobalt, manganese, and nickel are also present in varistors. Characterization of the MOV showed that cobalt, nickel, and manganese were not present in the varistor material at concentrations greater than one weight percent. This investigation determined whether a pH selective dissolution (leaching) process can be utilized as a starting point for hydrometallurgical recycling of the zinc in MOVs. This investigation showed it was possible to selectively leach zinc from the MOV without coleaching of bismuth and antimony by selecting a suitable pH, mainly higher than 3 for acids investigated. It was not possible to leach zinc without coleaching of manganese, cobalt, and nickel. It can be concluded from results obtained with the acids used, acetic, hydrochloric, nitric, and sulfuric, that sulfate leaching produced the most desirable results with respect to zinc leaching and it is also used extensively in industrial zinc production. PMID:26421313

Zinc oxide varistors and/or resistors

DOEpatents

Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

1993-07-27

Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

Zinc oxide varistors and/or resistors

DOEpatents

Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

1993-01-01

Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

Microstructure and Current-Voltage Characteristics of Erbium Oxide Doped Multicomponent Zinc Oxide Varistors

NASA Astrophysics Data System (ADS)

Roy, Samarpita; Kundu Roy, Tapatee; Das, Debdulal

2018-03-01

The present work emphasizes the influence of Er2O3 addition on the microstructure and nonlinear current-voltage characteristics of ZnO based varistors prepared by mixing in a high energy ball mill followed by compaction and sintering at a temperature of 1100 °C for duration ranging from 0.5 to 8 h. Increasing sintering time is found to enhance the size of ZnO grains of the sintered pellets and thereby, degrades the electrical properties. However, Er2O3 addition retards the grain growth of ZnO due to the generation of secondary spinel phases (ErVO4 and Er-rich) at grain boundaries and triple points that restrict the grain boundary migration. Er2O3 modified ZnO varistor sintered at 1100 °C for 0.5 h exhibits considerably improved electrical property with nonlinear exponent and breakdown field of 27 and 3880 V cm-1, respectively.

Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

PubMed Central

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary. PMID:22606043

Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

PubMed

Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

2012-01-01

High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

Laser-controlled optical transconductance varistor system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Hoang T.; Stuart, Brent C.

2017-07-11

An optical transconductance varistor system having a modulated radiation source configured to provide modulated stimulus, a wavelength converter operably connected to the modulated radiation source to produce a modulated stimulus having a predetermined wavelength, and a wide bandgap semiconductor photoconductive material in contact between two electrodes. The photoconductive material is operably coupled, such as by a beam transport module, to receive the modulated stimulus having the predetermined wavelength to control a current flowing through the photoconductive material when a voltage potential is present across the electrodes.

United States Air Force Weapons Laboratory Research Scholar Program, 1983-1984.

DTIC Science & Technology

1984-10-01

voltage upon passing through an RC circuit .) The phase shift is given by = tan-Tf (3) * where T is the cavity lifetime and f is the modulation ...spark in air at the external terminals of a filter module has * S. . . . . .. S ** . * * * * Page 8-18 approximately the same effect on the circuit as a... module usually contains a metal oxide varistor(s), and perhaps also 3 an RFI filter circuit . We shall discuss line conditioners and surge protection

A Direct Ultrasound Irradiation Method Synthesis of Monodisperse ZnO Microspheres for Varistors Ceramics Application

NASA Astrophysics Data System (ADS)

Chen, Tao; Wang, Mao-Hua; Zhang, Han-Ping; Liu, Jin-Ran; Yao, Da-Chuan

2016-08-01

Monodisperse and uniform ZnO microspheres were synthesized via an ultrasound irradiation method. The microstructure and morphology of the as-prepared sample were characterized by x-ray powder diffraction, Fourier transformation infrared spectra and scanning electron microscopy. The results indicate that the size of ZnO microspheres was strongly affected by the Zn(NO3)2·6H2O. As the amount of the precursor increased, the diameters of the ZnO microspheres can be turned from ˜500 nm to ˜2 μm. The electrical properties of the varistors ceramics prepared from the as-obtained ZnO powders were investigated. The results show that the varistors ceramics made from ZnO with a size of ˜500 nm and sintered in air at 1150°C for 2 h possess a density of 5.50 g/cm3 corresponding to 95.1% of the theoretical density, with breakdown voltage of 280.9 V/mm and nonlinear coefficient of ˜61.3.

Synthesis of SiO2-Coated Core-Shell ZnO Composites for Preparing High-Voltage Varistors

NASA Astrophysics Data System (ADS)

Qu, Xiao; Yao, Da-Chuan; Liu, Jin-Ran; Wang, Mao-Hua; Zhang, Han-Ping

2018-01-01

Monodispersed ZnO composite microspheres were successfully prepared by a facile ultrasound irradiation method. Then, the uniform core-shell structured composites were synthesized through the hydrolysis of tetraethyl orthosilicate on the surface of the ZnO composite microspheres. Microstructural studies of the as-obtained powders were carried out using the techniques of the x-ray powder diffraction, field emission scanning electron microscopy and transmission electron microscopy with energy dispersive x-ray spectroscopy. The results show that the pink ZnO composite powders as the core were spherical structures with the size of approximately 100 nm, and the SiO2 shell was fully coated on the surface of the core. On the basis of these results, the effect of SiO2 content on the thickness of the synthesized composites and microstructure, as well as the electrical properties of the ZnO varistors sintered in air at 1150°C for 2 h, were fully studied. In particular, the ZnO varistor prepared with the appropriate amount of the SiO2 coating (˜40 nm) leads to a superior electrical performance with the high breakdown voltage of 418 V mm-1 and an excellent nonlinear coefficient of 70.7, compared with the varistors obtained without the SiO2 coating. The high performance is attributed to the smaller and more homogeneous ZnO grains obtained via the SiO2 coating.

Rare earth doped zinc oxide varistors

DOEpatents

McMillan, A.D.; Modine, F.A.; Lauf, R.J.; Alim, M.A.; Mahan, G.D.; Bartkowiak, M.

1998-12-29

A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2--4.0% oxide of at least one rare earth element, 0.5--4.0% Co{sub 3}O{sub 4}, 0.05--0.4% K{sub 2}O, 0.05--0.2% Cr{sub 2}O{sub 3}, 0--0.2% CaO, 0.00005--0.01% Al{sub 2}O{sub 3}, 0--2% MnO, 0--0.05% MgO, 0--0.5% TiO{sub 3}, 0--0.2% SnO{sub 2}, 0--0.02% B{sub 2}O{sub 3}, balance ZnO. 4 figs.

Study on the Weak Stress in Flexural MEMS Cantilever

NASA Astrophysics Data System (ADS)

Ge, Yuetao; Ren, Yan

2018-03-01

In order to design a better piezoresistive MEMS cantilever beam, especially for cantilever beams that will detect weak forces or will be subjected to weak forces, this paper uses study on the weak stress in flexural MEMS cantilever. The sensor design structure, divided into protective layer, piezoresistive layer, support layer. The protective layer is responsible for protecting the piezoresistive layer so that the varistor is insulated from the outside; the piezoresistive layer is used to make the varistor; the support layer forms the main part of the cantilever beam, the majority of the cantilever beam. This paper has some value for cantilever multilayer structure design and cantilever beam size design.

Rare earth doped zinc oxide varistors

DOEpatents

McMillan, April D.; Modine, Frank A.; Lauf, Robert J.; Alim, Mohammad A.; Mahan, Gerald D.; Bartkowiak, Miroslaw

1998-01-01

A varistor includes a Bi-free, essentially homogeneous sintered body of a ceramic composition including, expressed as nominal weight %, 0.2-4.0% oxide of at least one rare earth element, 0.5-4.0% Co.sub.3 O.sub.4, 0.05-0.4% K.sub.2 O, 0.05-0.2% Cr.sub.2 O.sub.3, 0-0.2% CaO, 0.00005-0.01% Al.sub.2 O.sub.3, 0-2% MnO, 0-0.05% MgO, 0-0.5% TiO.sub.3, 0-0.2% SnO.sub.2, 0-0.02% B.sub.2 O.sub.3, balance ZnO.

Monolithic high voltage nonlinear transmission line fabrication process

DOEpatents

Cooper, G.A.

1994-10-04

A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

Development of a pin-post insulator with built-in metal oxide varistors for distribution lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fujiwara, N.; Yoneyama, T.; Hamada, Y.

1996-04-01

A 6.6 kV pin-post insulator, incorporating ZnO varistors, has been developed in order to reduce line faults caused by direct lighting strikes, thereby reducing and simplifying maintenance work on distribution systems. The developed insulators are interchangeable with conventional pin insulators and can withstand internal fault currents twice upon their failures. The simulated results regarding the response of the developed insulators to direct lightning strikes on an overhead ground wire agreed well with the experimental results. Simulation studies also revealed that installing the developed insulators on every two poles reduces the line-fault rate of present distribution lines in case of directmore » lightning strikes by 33%, while installing them on every pole reduces the rate by 97.5% or about 1/40 of the original value.« less

The experiment and analysis of tailoring V(sub L) and I(sub P) with ZnO voltage-sensitive resistor on HT-6M

NASA Astrophysics Data System (ADS)

Fan, Shuping; Liu, Baohua; Ye, Minyou; Luo, Jiarong

1992-12-01

The idea of improving plateau with ZnO 'varistor' (voltage sensitive resistor) is presented. The result of tailoring V(sub L) and I(sub P) experiment on HT-6M tokamak is introduced. An improved tens millisecond plateau was achieved ((Delta) V(sub L)/V(sub L) less than 5%, (Delta)I(sub p)/I(sub p) less than 5%, (Delta)N(sub e)/N(sub e) less than 10%). Obviously, it is of great importance for many diagnostic measurements and further physics experiments to have the constant distribution of temperature and density. A simplified analysis of the actual poloidal circuit of HT-6M is given. The numerical simulation and the result of experiment are compared. The operating principle of the varistor and its application on iron core transformer tokamak in plateau and rising phase are mentioned.

Dielectric and varistor properties of rare-earth-doped ZnO and CaCu3Ti4O12 composite ceramics

NASA Astrophysics Data System (ADS)

Lu, Huafei; Lin, Yuanhua; Yuan, Jiancong; Nan, Cewen; Chen, Kexin

2013-02-01

To investigate the multi-functional ceramics with both high permittivity and large nonlinear coefficient, we have prepared rare-earth Tb-and-Co doped ZnO and TiO2-rich CaCu3Ti4O12 (TCCTO) powders by chemical co-precipitation and sol-gel methods respectively, and then obtained the TCCTO/ZnO composite ceramics, sintered at 1100°C for 3 h in air. Analyzing the composite ceramics of the microstructure and phase composition indicated that the composite ceramics were composed of the main phases of ZnO and CaCu3Ti4O12 (CCTO). Our results revealed that the TCCTO/ZnO composite ceramics showed both high dielectric and good nonlinear electrical behaviors. The composite ceramic of TCCTO: ZnO = 0.3 exhibited a high dielectric constant of 210(1 kHz) with a nonlinear coefficient of 11. The dielectric behavior of TCCTO/ZnO composite could be explained by the mixture rule. With the high dielectric permittivity and tunable varistor behaviors, the composite ceramics has a potential application for the higher voltage transportation devices.

Dielectric and nonlinear current-voltage characteristics of rare-earth doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Liu, Laijun; Fang, Liang; Huang, Yanmin; Li, Yunhua; Shi, Danping; Zheng, Shaoying; Wu, Shuangshuang; Hu, Changzheng

2011-11-01

CaCu3Ti4O12 (CCTO) ceramics doped with rare earth (RE) oxides, including Y2O3, La2O3, Eu2O3, and Gd2O3, were prepared by the traditional solid-state reaction method in order to investigate the effect of RE oxide dopants on the electrical properties as a varistor. The phase identification and morphology of the ceramics were investigated by x-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. A high voltage measuring unit and precision impedance analyzer were used to determine the nonohmic (J-E) behaviors and measure the dielectric properties and impedance spectroscopy of the ceramics, respectively. The results showed that RE oxides enhanced greatly the breakdown electric flied but reduced the nonlinear coefficient and the mean grain size of CCTO ceramics. There was a good linear relationship between ln J and E1/2, which demonstrated that the Schottky barrier should exist at the grain boundary. A double Schottky barrier model composed of a depletion layer and a negative charge sheet was proposed, analogous to the barrier model for ZnO varistors. The depletion layer width determined by diffusion distance of RE ions and the effective surface states played important roles on the electrical properties of the ceramics.

Combating WMD: Journal of the U.S. Army Nuclear and CWMD Agency. Issue 5, Spring/Summer 2010

DTIC Science & Technology

2010-06-01

reception . In the past, antennas were protected from unwanted signals with high capaci- tance metal oxide varistors (a type of surge suppressor) placed at...including a gas-cooled reactor design combined with a closed-cycle gas-turbine generator that could be transportable on semi- trailers , railroad...where else. Towns, schools, shopping areas, theatres, hospitals, residential areas with houses, trailers , hutments, and barracks went up by the

Experiments of a 100 kV-level pulse generator based on metal-oxide varistor

NASA Astrophysics Data System (ADS)

Cui, Yan-cheng; Wu, Qi-lin; Yang, Han-wu; Gao, Jing-ming; Li, Song; Shi, Cheng-yu

2018-03-01

This paper introduces the development and experiments of a 100 kV-level pulse generator based on a metal-oxide varistor (MOV). MOV has a high energy handling capacity and nonlinear voltage-current (V-I) characteristics, which makes it useful for high voltage pulse shaping. Circuit simulations based on the measured voltage-current characteristics of MOV verified the shaping concept and showed that a circuit containing a two-section pulse forming network (PFN) will result in better defined square pulse than a simple L-C discharging circuit. A reduced-scale experiment was carried out and the result agreed well with simulation prediction. Then a 100 kV-level pulse generator with multiple MOVs in a stack and a two-section pulse forming network (PFN) was experimented. A pulse with a voltage amplitude of 90 kV, rise time of about 50 ns, pulse width of 500 ns, and flat top of about 400 ns was obtained with a water dummy load of 50 Ω. The results reveal that the combination of PFN and MOV is a practical way to generate high voltage pulses with better flat top waveforms, and the load voltage is stable even if the load's impedance varies. Such pulse generator can be applied in many fields such as surface treatment, corona plasma generation, industrial dedusting, and medical disinfection.

Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications

DTIC Science & Technology

2000-06-01

coatings , photovoltaics, touch sensitive controls, electromagnetic shielding (as found on microwave ovens and stealth fighters), static dissipaters, and so...depositing high quality films. The methods are physical vapor deposition ( PVD ), spin/mist deposition, (CVD), and alternating layer (AL) CVD. PVD ...PZT & SBT, YBa2Cu3O, CeO, InO, TCOs, Varistors Ta2O5 , ZrO, MnO, HfO, CeO, MnO, MgO SAW/microwave Silicon/: Si, SiGe, SiGeC, �. Opto-electronics

Determination of micro amounts of iron, aluminum, and alkaline earth metals in silicon carbide

NASA Technical Reports Server (NTRS)

Hirata, H.; Arai, M.

1978-01-01

A colorimetric method for analysis of micro components in silicon carbide used as the raw material for varistors is described. The microcomponents analyzed included iron soluble in hydrochloric acid, iron, aluminum, calcium and magnesium. Samples were analyzed by the method, and the results for iron and aluminum agreed well with the N.B.S. standard values and the values obtained by the other company. The method can therefore be applied to the analysis of actual samples.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, William R. [Orinda, CA

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

Harmonic multiplication using resonant tunneling

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. G.; Brown, E. R.; Goodhue, W. D.; Correa, C. A.

1988-01-01

This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.

Abnormal temperature dependence of conductance of single Cd-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Li, Q. H.; Wan, Q.; Wang, Y. G.; Wang, T. H.

2005-06-01

Positive temperature coefficient of resistance is observed on single Cd-doped ZnO nanowires. The current along the nanowire increases linearly with the bias and saturates at large biases. The conductance is greatly enhanced either by ultraviolet illumination or infrared illumination. However, the conductance decreases with increasing temperature, in contrast to the reported temperature behavior either for ZnO nanostructures or for CdO nanoneedles. The increase of the conductance under illumination is related to surface effect and the decrease with increasing temperature to bulk effect. These results show that Cd doping does not change surface effect but affects bulk effect. Such a bulk effect could be used to realize on-chip temperature-independent varistors.

Fault Location Based on Synchronized Measurements: A Comprehensive Survey

PubMed Central

Al-Mohammed, A. H.; Abido, M. A.

2014-01-01

This paper presents a comprehensive survey on transmission and distribution fault location algorithms that utilize synchronized measurements. Algorithms based on two-end synchronized measurements and fault location algorithms on three-terminal and multiterminal lines are reviewed. Series capacitors equipped with metal oxide varistors (MOVs), when set on a transmission line, create certain problems for line fault locators and, therefore, fault location on series-compensated lines is discussed. The paper reports the work carried out on adaptive fault location algorithms aiming at achieving better fault location accuracy. Work associated with fault location on power system networks, although limited, is also summarized. Additionally, the nonstandard high-frequency-related fault location techniques based on wavelet transform are discussed. Finally, the paper highlights the area for future research. PMID:24701191

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dinwiddie, R. B.; Wang, H.; Johnnerfelt, B.

Zinc Oxide based surge arresters are widely used to safeguard and improve reliability of the electrical power delivering and transmission systems. The primary application of surge arresters is to protect valuable components such as transformers from lightning strikes and switching transients in the transmission lines. Metal-oxide-varistor blocks (MOV, e.g. ZnO) are used in surge arrester assemblies. ORNL has developed an advanced infrared imaging technique to monitor the joule heating during transient heating of small varistors. In a recent short-term R&D effort, researchers from ABB and ORNL have expanded the use of IR imaging to larger station-class arrester blocks. An on-sitemore » visit to the ABB facility demonstrated that the use of IR imaging is not only feasible but also has the potential to improve arrester quality and reliability. The ASEA Brown Bower (ABB) Power and Technology & Development Company located at Greensburg PA having benefited from collaborative R&D cooperation with ORNL. ABB has decided a follow-on CRADA project is very important. While the previous efforts to study surge arresters included broader studies of IR imaging and computer modeling, ABB has recognized the potential of IR imaging, decided to focus on this particular area. ABB plans to use this technique to systematically study the possible defects in the arrester fabrication process. ORNL will improve the real-time monitoring capability and provide analysis of the infrared images. More importantly, the IR images will help us understand transient heating in a ceramic material from the scientific standpoint. With the improved IR imaging ABB and ORNL will employ the IR system to visualize manufacturing defects that could not be detected otherwise. The proposed on-site tests at ABB Power Technology & Development processing facility will identify the defects and also allow quick adjustments to be made since the resulting products can be inspected immediately. ABB matched the DOE $50K funding with $50K funds-in to ORNL. ABB also provided about $75K in-kind effort for on-site testing, and R&D to improve the fabrication process.« less

Electron-trapping polycrystalline materials with negative electron affinity.

PubMed

McKenna, Keith P; Shluger, Alexander L

2008-11-01

The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considering their relevance for applications and abundance in the environment, there have been few experimental or theoretical studies of the electron trapping properties of grain boundaries in highly ionic materials such as the alkaline earth metal oxides and alkali halides. Here we demonstrate, by first-principles calculations on MgO, LiF and NaCl, a qualitatively new type of electron trapping at grain boundaries. This trapping is associated with the negative electron affinity of these materials and is unusual as the electron is confined in the empty space inside the dislocation cores.

Electric and dielectric properties of Bi-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo Fengchao; He Jinliang; Hu Jun

2009-04-01

Pure and Bi-doped Bi{sub x}CaCu{sub 3}Ti{sub 4}O{sub 12+1.5x} (BCCTO, x=0, 0.15, 0.25, and 0.3) ceramics were fabricated by the solid-state sintering method. The results indicate that the additional bismuth has a great influence on both the microstructures and the electric properties. A new phase (Bi{sub 4}Ti{sub 3}O{sub 12}) can be observed in the doped samples from the x-ray diffraction patterns. Additionally, the CCTO gain size can be controlled by bismuth content. All of the BCCTO samples show high dielectric permittivity ({approx}10{sup 4} at 10{sup 3} Hz) and varistor effect, and the relaxation peak shifts to higher frequency. The resistance risesmore » with the increase in bismuth, and the activation energy at the grain boundary is reduced from 0.65 to 0.47 eV.« less

Crystal phase analysis of SnO{sub 2}-based varistor ceramic using the Rietveld method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreira, M.L.; Pianaro, S.A.; Andrade, A.V.C.

2006-09-15

A second addition of l mol% of CoO to a pre calcined SnO{sub 2}-based ceramic doped with 1.0 mol% of CoO, 0.05 mol% of Nb{sub 2}O{sub 5} and 0.05 mol% of Cr{sub 2}O{sub 3} promotes the appearance of a secondary phase, Co{sub 2}SnO{sub 4}, besides the SnO{sub 2} cassiterite phase, when the ceramic was sintered at 1350 deg. C/2 h. This was observed using X-ray powder diffraction, scanning electron microscopy and energy dispersive X-ray techniques. Rietveld refinement was carried out to quantify the phases present in the ceramic system. The results of the quantitative analysis were 97 wt.% SnO{sub 2}more » and 3 wt.% Co{sub 2}SnO{sub 4}. The microstructural analysis showed that a certain amount of cobalt ion remains into cassiterite grains.« less

An Approach to the Lightning Overvoltage Protection of Medium Voltage Lines in Severe Lightning Areas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Omidiora, M. A.; Lehtonen, M.

2008-05-08

This paper deals with the effect of shield wires on lightning overvoltage reduction and the energy relief of MOV (Metal Oxide Varistor) arresters from direct strokes to distribution lines. The subject of discussion is the enhancement of lightning protection in Finnish distribution networks where lightning is most severe. The true index of lightning severity in these areas is based on the ground flash densities and return stroke data collected from the Finnish meteorological institute. The presented test case is the IEEE 34-node test feeder injected with multiple lightning strokes and simulated with the Alternative Transients Program/Electromagnetic Transients program (ATP/EMTP). Themore » response of the distribution line to lightning strokes was modeled with three different cases: no protection, protection with surge arresters and protection with a combination of shield wire and arresters. Simulations were made to compare the resulting overvoltages on the line for all the analyzed cases.« less

A Fault Location Algorithm for Two-End Series-Compensated Double-Circuit Transmission Lines Using the Distributed Parameter Line Model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Ning; Gombos, Gergely; Mousavi, Mirrasoul J.

A new fault location algorithm for two-end series-compensated double-circuit transmission lines utilizing unsynchronized two-terminal current phasors and local voltage phasors is presented in this paper. The distributed parameter line model is adopted to take into account the shunt capacitance of the lines. The mutual coupling between the parallel lines in the zero-sequence network is also considered. The boundary conditions under different fault types are used to derive the fault location formulation. The developed algorithm directly uses the local voltage phasors on the line side of series compensation (SC) and metal oxide varistor (MOV). However, when potential transformers are not installedmore » on the line side of SC and MOVs for the local terminal, these measurements can be calculated from the local terminal bus voltage and currents by estimating the voltages across the SC and MOVs. MATLAB SimPowerSystems is used to generate cases under diverse fault conditions to evaluating accuracy. The simulation results show that the proposed algorithm is qualified for practical implementation.« less

Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor

NASA Astrophysics Data System (ADS)

Ferng, Yi-Cherng; Chang, Liann-Be; Das, Atanu; Lin, Ching-Chi; Cheng, Chun-Yu; Kuei, Ping-Yu; Chow, Lee

2012-12-01

In this paper, a varactor with metal-semiconductor-metal diodes on top of the (NH4)2S/P2S5-treated AlGaN/GaN two-dimensional electron gas epitaxial structure (MSM-2DEG) is proposed to the surge protection for the first time. The sulfur-treated MSM-2DEG varactor properties, including current-voltage (I-V), capacitance-voltage (C-V), and frequency response of the proposed surge protection circuit, are presented. To verify its capability of surge protection, we replace the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit with the sulfur-treated MSM-2DEG varactor under the application conditions of system-level surge tests. The measured results show that the proposed surge protection circuit, consisted of a gas discharge arrester (GDA) and a sulfur-treated MSM-2DEG varactor, can suppress an electromagnetic pulse (EMP) voltage of 4000 to 360 V, a reduction of 91%, whereas suppression is to 1780 V, a reduction of 55%, when using only a GDA.

Effects of frit addition on the surface morphology and structural properties of ZnO-Bi2O3-Mn2O3 discs

NASA Astrophysics Data System (ADS)

Shahardin, Ahmad Hajidi; Mahmud, Shahrom; Sendi, Rabab Khalid

2015-04-01

ZnO-Bi2O3-Mn2O3 discs were prepared using conventional ceramic processing method and sintered at 1000°C. The different percentages of frit on the ZnO-Bi2O3-Mn2O3 discs were 0.0%, 0.5%, 1.0% and 3.0%. From FESEM observation, the grain structure and grain growth were more uniformly constructed and well distributed. Frit addition was found to cause a big drop in the average grain size from 4.59 µm to 2.76 µm even with an addition of 0.5 mol%. The Si and Al content in the frit recipe might have played a role as inhibiting agents in grain growth during sintering. RAMAN intensity and phase shifting were not affected by frit addition except at 3 mol%. Frit addition did not affect the formation of secondary phases. Frit addition below 3 mol% in ZnO-Bi2O3-Mn2O3 varistor discs can be used as a method in controlling grain size without affecting other properties.

Optical characterization of pure and Al-doped ZnO prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Belka, Radosław; Keczkowska, Justyna; Kasińska, Justyna

2016-09-01

In this paper the preparation process and optical characterization of pure and Al3+ doped zinc oxide (Al:ZnO) coatings will be presented. ZnO based materials have been studied extensively due to their potential applications in optoelectronic devices as conductive gas sensors, transparent conductive, electrodes, solar cell windows, varistors, UVfilters or photovoltaic cells. It is II-VI semiconductor with wide-band gap of 3.37 eV and large exciton binding energy of 60meV. It is possible to improve the conductivity of ZnO coating by intentionally doping ZnO with aluminium ions during preparation process. Such transparent and conducting thin films, known as AZO (Aluminium Zinc Oxide) films, are very good candidate for application as transparent conducting materials in many optoelectronic devices. The well-known sol-gel method is used for preparation of solution, coated on glass substrates by dip coating process. Prepared samples were investigated by Raman and UV-VIS spectroscopy. Transmittance as well as specular and diffuse reflectance spectroscopy methods were used for studies of optical parameters. We found that Al admixture influences on optical bandgap of ZnO.

A soft computing scheme incorporating ANN and MOV energy in fault detection, classification and distance estimation of EHV transmission line with FSC.

PubMed

Khadke, Piyush; Patne, Nita; Singh, Arvind; Shinde, Gulab

2016-01-01

In this article, a novel and accurate scheme for fault detection, classification and fault distance estimation for a fixed series compensated transmission line is proposed. The proposed scheme is based on artificial neural network (ANN) and metal oxide varistor (MOV) energy, employing Levenberg-Marquardt training algorithm. The novelty of this scheme is the use of MOV energy signals of fixed series capacitors (FSC) as input to train the ANN. Such approach has never been used in any earlier fault analysis algorithms in the last few decades. Proposed scheme uses only single end measurement energy signals of MOV in all the 3 phases over one cycle duration from the occurrence of a fault. Thereafter, these MOV energy signals are fed as input to ANN for fault distance estimation. Feasibility and reliability of the proposed scheme have been evaluated for all ten types of fault in test power system model at different fault inception angles over numerous fault locations. Real transmission system parameters of 3-phase 400 kV Wardha-Aurangabad transmission line (400 km) with 40 % FSC at Power Grid Wardha Substation, India is considered for this research. Extensive simulation experiments show that the proposed scheme provides quite accurate results which demonstrate complete protection scheme with high accuracy, simplicity and robustness.

Ceramic Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

EWSUK,KEVIN G.

1999-11-24

Ceramics represent a unique class of materials that are distinguished from common metals and plastics by their: (1) high hardness, stiffness, and good wear properties (i.e., abrasion resistance); (2) ability to withstand high temperatures (i.e., refractoriness); (3) chemical durability; and (4) electrical properties that allow them to be electrical insulators, semiconductors, or ionic conductors. Ceramics can be broken down into two general categories, traditional and advanced ceramics. Traditional ceramics include common household products such as clay pots, tiles, pipe, and bricks, porcelain china, sinks, and electrical insulators, and thermally insulating refractory bricks for ovens and fireplaces. Advanced ceramics, also referredmore » to as ''high-tech'' ceramics, include products such as spark plug bodies, piston rings, catalyst supports, and water pump seals for automobiles, thermally insulating tiles for the space shuttle, sodium vapor lamp tubes in streetlights, and the capacitors, resistors, transducers, and varistors in the solid-state electronics we use daily. The major differences between traditional and advanced ceramics are in the processing tolerances and cost. Traditional ceramics are manufactured with inexpensive raw materials, are relatively tolerant of minor process deviations, and are relatively inexpensive. Advanced ceramics are typically made with more refined raw materials and processing to optimize a given property or combination of properties (e.g., mechanical, electrical, dielectric, optical, thermal, physical, and/or magnetic) for a given application. Advanced ceramics generally have improved performance and reliability over traditional ceramics, but are typically more expensive. Additionally, advanced ceramics are typically more sensitive to the chemical and physical defects present in the starting raw materials, or those that are introduced during manufacturing.« less

Effect of temperature on the electrical properties of Zn0.95M0.05O (M = Zn, Fe, Ni)

NASA Astrophysics Data System (ADS)

Sedky, A.; Mohamed, S. B.

2014-01-01

We report here the structural and electrical properties of Zn0.95M0.05O ceramic varistors, M = Zn, Ni and Fe. The samples were tested for phase purity and structural morphology by using X-Ray diffraction XRD and scanning electron microscope SEM techniques. The current-voltage characteristics J-E were obtained by dc electrical measurements in the temperature range of 300-500 K. Addition of doping did not influence the hexagonal wurtzite structure of ZnO ceramics. Furthermore, the lattice parameters ratio c/a for hexagonal distortion and the length of the bond parallel to the c axis, u were nearly unaffected. The average grain size was decreased from 1.57 μm for ZnO to 1.19 μm for Ni sample and to 1.22 μm for Fe sample. The breakdown field EB was decreased as the temperature increased, in the following order: Fe > Zn > Ni. The nonlinear region was clearly observed for all samples as the temperature increased up to 400 K and completely disappeared with further increase of temperature up to 500 K. The values of nonlinear coefficient, a were between 1.16 and 42 for all samples, in the following order: Fe > Zn > Ni. Moreover, the electrical conductivity s was gradually increased as the temperature increased up to 500 K, in the following order: Ni > Zn > Fe. On the other hand, the activation energies were 0.194 eV, 0.136 and 0.223 eV for all samples, in the following order: Fe, Zn and Ni. These results have been discussed in terms of valence states, magnetic moment and thermo-ionic emission, which were produced by the doping, and controlling the potential barrier of ZnO.

Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

NASA Astrophysics Data System (ADS)

Kulshreshtha, Prashant Kumar

This thesis focuses on the fundamental understanding of stress-modified crack-propagation in photovoltaic (PV) silicon in relation to the critical issue of PV silicon "wafer breakage". The interactions between a propagating crack and impurities/defects/residual stresses have been evaluated for consequential fracture path in a thin PV Si wafer. To investigate the mechanism of brittle fracture in silicon, the phase transformations induced by elastic energy released at a propagating crack-tip have been evaluated by locally stressing the diamond cubic Si lattice using a rigid Berkovich nanoindenter tip (radius ≈50 nm). Unique pressure induced phase transformations and hardness variations have been then related to the distribution of precipitates (O, Cu, Fe etc.), and the local stresses in the wafer. This research demonstrates for the first time the "ductile-like fracture" in almost circular crack path that significantly deviates from its energetically favorable crystallographic [110](111) system. These large diameter (≈ 200 mm) Si wafers were sliced to less than 180 microm thickness from a Czochralski (CZ) ingot that was grown at faster than normal growth rates. The vacancy (vSi) driven precipitation of oxygen at enhanced thermal gradients in the wafer core develops large localized stresses (upto 100 MPa) which we evaluated using Raman spectral analysis. Additional micro-FTIR mapping and microscopic etch pit measurements in the wafer core have related the observed crack path deviations to the presence of concentric ring-like distributions of oxygen precipitates (OPs). To replicate these "real-world" breakage scenarios and provide better insight on crack-propagation, several new and innovative tools/devices/methods have been developed in this study. An accurate quantitative profiling of local stress, phase changes and load-carrying ability of Si lattice has been performed in the vicinity of the controlled micro-cracks created using micro-indentations to represent the surface/edge micro-cracks (i.e. sources of crack initiation). The low load (<10mN) nanoindentations using Hysitron Triboindenter RTM have been applied to estimate the zone of crack-propagation related plastic deformation and amorphization around the radial or the lateral cracks. The gradual reduction in hardness due to local stress field and phase change around the crack has been established using electron back scattered diffraction (EBSD), atomic force microscopy (AFM) and Raman spectroscopy, respectively, at nano- and micro-scale. The load (P) vs. displacement (h) curves depict characteristic phase transformation events (eg. elbow or pop-out) depending on the sign of residual stress in the silicon lattice. The formation of Si-XII/III phases (elastic phases) in large volumes during indentation of compressed Si lattice have been discussed as an option to eliminate the edge micro-cracks formed during wafer sawing by ductile flow. The stress gradient at an interface, which can be a grain-boundary (GB), twin or a interface between silicon and precipitate, has been evaluated for crack path modification. An direct-silicon-bonded (DSB) based ideal [110]/[100] interface has been examined to study the effect of crystallographic orientation variation across a planar silicon 2D boundary. Using constant source diffusion/annealing process, Fe and Cu impurities have been incorporated in model [110]/[100]GB to provide equivalence to a real decorated multi-crystalline grain boundary. We found that Fe precipitates harden the undecorated GB structure, whereas Cu precipitates introduce dislocation-induced plasticity to soften it. Aluminum Schottky diodes have been evaporated on the DSB samples to sensitively detect the instantaneous current response from the phase-transformed Si under nanoindenter tip. The impact of metallic impurity and their precipitates on characteristic phase transformations (i.e. pop-in or pop-out) demonstrate that scattered distribution of large Cu-precipitates (upto 50 nm) compresses Si-lattice to facilitate Si-XII/III formations, i.e. high pressure ductile phases. Sweeping voltage measurements at a given load determine that Si lattice has to be stressed beyond 1 mN to complete the Si-I (semiconducting) to Si-II (ohmic) phase changes. Above 1 mN load DSB sample has a varistor-like behavior due to higher grain-boundary resistance from interfacial states. The precipitate defect structure stimulated stresses at the bulk Si lattice or grain boundary modify the rate of elastic energy release at the crack-tip and associated phase change and hardness values in response to external loading. The systematic approach in this thesis elucidates that the interfacial surface area between Si-lattice and precipitate plays pivotal role in defining extent of stresses in the silicon, i.e. smaller precipitates in higher densities are severe than few larger volume precipitates. The finding of high-pressure ductile phase formation during loading of compressed silicon structure has been suggested to PV industry as a prospective candidate for reducing the wafer breakage and allowing larger handling stresses.