Applications of Gunn lasers

NASA Astrophysics Data System (ADS)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x < 0.45) is used the active layer, making them candidates for light sources in plastic optical fibre (POF) based short-distance data communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Chip-to-chip optical link by using optical wiring method

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Ahn, Seoung Ho; Jeong, Myung-Yung; Rho, Byung Sup; Park, Hyo Hoon

2008-01-01

A practical optical link system was prepared with a transmitter (Tx) and receiver (Rx). The optical TRx module consisted of a metal optical bench, a module printed circuit board (PCB), a driver/receiver IC, a VCSEL/PD array, and an optical link block composed of plastic optical fiber (POF). For the optical interconnection between the light-sources and detectors, an optical wiring method has been proposed to enable easy assembly. This paper provides a method for optical interconnection between an optical Tx and an optical Rx, comprising the following steps: (a) forming a light source device, an optical detection device, and an optical transmission unit on a substrate (metal optical bench (MOB)); (b) preparing a flexible optical transmission-connection medium (optical wiring link) to optically connect the light source device formed on the substrate with the optical detection device; and (c) directly connecting one end of the surface-finished optical transmission connection medium with the light source device and the other end with the optical detection device. A chip-to-chip optical link system constructed with TRx modules was fabricated and the optical characteristics were measured. The results clearly demonstrate that the use of an optical wiring method can provide robust and cost-effective assembly for vertical-cavity surface-emitting lasers (VCSELs) and photodiodes (PDs). We successfully achieved a 5 Gb/s data transmission rate with this optical link.

A compact, portable and low cost generic interrogation strain sensor system using an embedded VCSEL, detector and fibre Bragg grating

NASA Astrophysics Data System (ADS)

Lee, Graham C. B.; Van Hoe, Bram; Yan, Zhijun; Maskery, Oliver; Sugden, Kate; Webb, David; Van Steenberge, Geert

2012-03-01

We present a compact, portable and low cost generic interrogation strain sensor system using a fibre Bragg grating configured in transmission mode with a vertical-cavity surface-emitting laser (VCSEL) light source and a GaAs photodetector embedded in a polymer skin. The photocurrent value is read and stored by a microcontroller. In addition, the photocurrent data is sent via Bluetooth to a computer or tablet device that can present the live data in a real time graph. With a matched grating and VCSEL, the system is able to automatically scan and lock the VCSEL to the most sensitive edge of the grating. Commercially available VCSEL and photodetector chips are thinned down to 20 μm and integrated in an ultra-thin flexible optical foil using several thin film deposition steps. A dedicated micro mirror plug is fabricated to couple the driving optoelectronics to the fibre sensors. The resulting optoelectronic package can be embedded in a thin, planar sensing sheet and the host material for this sheet is a flexible and stretchable polymer. The result is a fully embedded fibre sensing system - a photonic skin. Further investigations are currently being carried out to determine the stability and robustness of the embedded optoelectronic components.

VCSEL optical subassembly for avionics fiber optic modules

NASA Astrophysics Data System (ADS)

Hager, Harold E.; Chan, Eric Y.; Beranek, Mark W.; Hong, Chi-Shain

1996-04-01

With the growing maturation of vertical cavity surface emitting laser (VCSEL) technology as a source of commercial off-the-shelf components, the question of VCSEL suitability for use in avionics-qualifiable fiber-optic systems naturally follows. This paper addresses avionics suitability from two perspectives. First, measured performance and burn-in reliability results, determined from characterization of Honeywell VCSELs, are compared with application-based military and commercial avionics environmental requirements. Second, design guidelines for developing a cost-effective VCSEL optical subassembly (VCSEL/OSA) are outlined.

Single-Mode VCSELs

NASA Astrophysics Data System (ADS)

Larsson, Anders; Gustavsson, Johan S.

The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for single-mode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified.

The HomePlanet project: a HAVi multi-media network over POF

NASA Astrophysics Data System (ADS)

Roycroft, Brendan; Corbett, Brian; Kelleher, Carmel; Lambkin, John; Bareel, Baudouin; Goudeau, Jacques; Skiczuk, Peter

2005-06-01

This project has developed a low cost in-home network compatible with network standard IEEE1394b. We have developed all components of the network, from the red resonant cavity LEDs and VCSELs as light sources, the driver circuitry, plastic optical fibres for transmission, up to the network management software. We demonstrate plug-and-play operation of S100 and S200 (125 and 250Mbps) data streams using 650nm RCLEDs, and S400 (500 Mbps) data streams using VCSELs. The network software incorporates Home Audio Video interoperability (HAVi), which allows any HAVi device to be hot-plugged into the network and be instantly recognised and controllable over the network.

Lithographic VCSEL array multimode and single mode sources for sensing and 3D imaging

NASA Astrophysics Data System (ADS)

Leshin, J.; Li, M.; Beadsworth, J.; Yang, X.; Zhang, Y.; Tucker, F.; Eifert, L.; Deppe, D. G.

2016-05-01

Sensing applications along with free space data links can benefit from advanced laser sources that produce novel radiation patterns and tight spectral control for optical filtering. Vertical-cavity surface-emitting lasers (VCSELs) are being developed for these applications. While oxide VCSELs are being produced by most companies, a new type of oxide-free VCSEL is demonstrating many advantages in beam pattern, spectral control, and reliability. These lithographic VCSELs offer increased power density from a given aperture size, and enable dense integration of high efficiency and single mode elements that improve beam pattern. In this paper we present results for lithographic VCSELs and describes integration into military systems for very low cost pulsed applications, as well as continuouswave applications in novel sensing applications. The VCSELs are being developed for U.S. Army for soldier weapon engagement simulation training to improve beam pattern and spectral control. Wavelengths in the 904 nm to 990 nm ranges are being developed with the spectral control designed to eliminate unwanted water absorption bands from the data links. Multiple beams and radiation patterns based on highly compact packages are being investigated for improved target sensing and transmission fidelity in free space data links. These novel features based on the new VCSEL sources are also expected to find applications in 3-D imaging, proximity sensing and motion control, as well as single mode sensors such as atomic clocks and high speed data transmission.

Dynamic Self-Locking of an OEO Containing a VCSEL

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Yu, Nan; Savchenkov, Anatoliy; Maleki, Lute

2009-01-01

A method of dynamic self-locking has been demonstrated to be effective as a means of stabilizing the wavelength of light emitted by a vertical-cavity surface-emitting laser (VCSEL) that is an active element in the frequency-control loop of an optoelectronic oscillator (OEO) designed to implement an atomic clock based on an electromagnetically- induced-transparency (EIT) resonance. This scheme can be considered an alternative to the one described in Optical Injection Locking of a VCSEL in an OEO (NPO-43454), NASA Tech Briefs, Vol. 33, No. 7 (July 2009), page 33. Both schemes are expected to enable the development of small, low-power, high-stability atomic clocks that would be suitable for use in applications involving precise navigation and/or communication. To recapitulate from the cited prior article: In one essential aspect of operation of an OEO of the type described above, a microwave modulation signal is coupled into the VCSEL. Heretofore, it has been well known that the wavelength of light emitted by a VCSEL depends on its temperature and drive current, necessitating thorough stabilization of these operational parameters. Recently, it was discovered that the wavelength also depends on the microwave power coupled into the VCSEL. This concludes the background information. From the perspective that led to the conception of the optical injection-locking scheme described in the cited prior article, the variation of the VCSEL wavelength with the microwave power circulating in the frequency-control loop is regarded as a disadvantage and optical injection locking is a solution of the problem of stabilizing the wavelength in the presence of uncontrolled fluctuations in the microwave power. The present scheme for dynamic self-locking emerges from a different perspective, in which the dependence of VCSEL wavelength on microwave power is regarded as an advantageous phenomenon that can be exploited as a means of controlling the wavelength. The figure schematically depicts an atomic-clock OEO of the type in question, wherein (1) the light from the VCSEL is used to excite an EIT resonance in selected atoms in a gas cell (e.g., 87Rb atoms in a low-pressure mixture of Ar and Ne) and (2) the power supplied to the VCSEL is modulated by a microwave signal that includes components at beat frequencies among the VCSEL wavelength and modulation sidebands. As the VCSEL wavelength changes, it moves closer to or farther from a nearby absorption spectral line, and the optical power transmitted through the cell (and thus the loop gain) changes accordingly. A change in the loop gain causes a change in the microwave power and, thus, in the VCSEL wavelength. It is possible to choose a set of design and operational parameters (most importantly, the electronic part of the loop gain) such that the OEO stabilizes itself in the sense that an increase in circulating microwave power causes the VCSEL wavelength to change in a direction that results in an increase in optical absorption and thus a decrease in circulating microwave power. Typically, such an appropriate choice of operational parameters involves setting the nominal VCSEL wavelength to a point on the shorter-wavelength wing of an absorption spectral line.

Ultrafast Narrow Band Modulation of VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

2002-01-01

Multimode beating was greatly enhanced by taking output from part (e.g., half) of the output facet. Simpler sources of microwaves and millimeter waves of various frequencies were generated by varying the VCSEL diameter in a single multimode VCSEL our coupling of a few VCSELs. Breathing frequency in multi-mode operations affects modulation response and bandwidth. Optimizing RO frequency and mode beating frequency could potentially expand bandwidths suitable for wide band digital communications.

Development of a compact optical MEMS scanner with integrated VCSEL light source and diffractive optics

NASA Astrophysics Data System (ADS)

Krygowski, Thomas W.; Reyes, David; Rodgers, M. Steven; Smith, James H.; Warren, Mial E.; Sweatt, William C.; Blum-Spahn, Olga; Wendt, Joel R.; Asbill, Randolph E.

1999-09-01

In this work the design and initial fabrication results are reported for the components of a compact optical-MEMS laser scanning system. This system integrates a silicon MEMS laser scanner, a Vertical Cavity Surface Emitting Laser (VCSEL) and passive optical components. The MEMS scanner and VCSEL are mounted onto a fused silica substrate which serves as an optical interconnect between the devices. Two Diffractive Optical Elements (DOE's) are etched into the fused silica substrate to focus the VCSEL beam and increase the scan range. The silicon MEMS scanner consists of an actuator that continuously scans the position of a large polysilicon gold- coated shuttle containing a third DOE. Interferometric measurements show that the residual stress in the 50 micrometer X 1000 micrometer shuttle is extremely low, with a maximum deflection of only 0.18 micrometer over an 800 micrometer span for an unmetallized case and a deflection of 0.56 micrometer for the metallized case. A conservative estimate for the scan range is approximately plus or minus 4 degrees, with a spot size of about 0.5 mm, producing 50 resolvable spots. The basic system architecture, optical and MEMS design is reported in this paper, with an emphasis on the design and fabrication of the silicon MEMS scanner portion of the system.

VCSEL end-pumped passively Q-switched Nd:YAG laser with adjustable pulse energy.

PubMed

Goldberg, Lew; McIntosh, Chris; Cole, Brian

2011-02-28

A compact, passively Q-switched Nd:YAG laser utilizing a Cr4+:YAG saturable absorber, is end-pumped by the focused emission from an 804 nm vertical-cavity surface-emitting laser (VCSEL) array. By changing the VCSEL operating current, we demonstrated 2x adjustability in the laser output pulse energy, from 9 mJ to 18 mJ. This energy variation was attributed to changes in the angular distribution of VCSEL emission with drive current, resulting in a change in the pump intensity distribution generated by a pump-light-focusing lens.

Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Bae, Hopil

With the advent of new Internet services for exchaging not only texts and pictures but also home-made videos and high-definition movies, the appetite for more internet bandwidth is still growing at a fast pace. Satisfying these demands require extending the high-speed fiber optical networks all the way to the end users. This approach will require high-performance lasers, detectors, and modulators that are also very inexpensive and power-efficient. VCSELs are ideal light sources for this application due to their low power consumption, easier fiber coupling, ease of fabrication, and the possibility of dense 2-D integration. A new GaAs-based gain material, GaInNAsSb, can be an enabling technology for VCSELs in the 1.3-1.6mum wavelength range appropriate for optical communications. It can also enable high-power lasers for pumping Raman amplifiers, which can significantly increase the usable bandwidth of optical fibers. Growth of GaInNAsSb by molecular beam epitaxy has been very challenging, but various improvements in growth and annealing conditions lead to very low-threshold 1.55mum edge-emitting lasers and the first GaAs-based pulsed-mode 1.534mum VCSELs. Improving their temperature stability and achieving room-temperature continuous-wave(CW) VCSELs was the main objective of this thesis work. This thesis first discusses additional improvements in annealing and growth conditions, which led to a factor of 4 increase in the peak pholuminescence intensity. Edge-emitting lasers employing different numbers and structures of GaInNasSb QWs were compared, and the carrier leakage to the GaNAs barriers has been identified to be the dominant source of carrier recombination, by measurements using segmented contacts. Using the same triple QW structures and carefully designed AlGaAs/GaAs DBR mirrors, the first-ever all-epitaxial near-room-temperature CW VCSELs at 1528nm are realized on GaAs substrates.

VCSEL fault location apparatus and method

DOEpatents

Keeler, Gordon A [Albuquerque, NM; Serkland, Darwin K [Albuquerque, NM

2007-05-15

An apparatus for locating a fault within an optical fiber is disclosed. The apparatus, which can be formed as a part of a fiber-optic transmitter or as a stand-alone instrument, utilizes a vertical-cavity surface-emitting laser (VCSEL) to generate a test pulse of light which is coupled into an optical fiber under test. The VCSEL is subsequently reconfigured by changing a bias voltage thereto and is used as a resonant-cavity photodetector (RCPD) to detect a portion of the test light pulse which is reflected or scattered from any fault within the optical fiber. A time interval .DELTA.t between an instant in time when the test light pulse is generated and the time the reflected or scattered portion is detected can then be used to determine the location of the fault within the optical fiber.

Demonstrating ultrafast polarization dynamics in spin-VCSELs

NASA Astrophysics Data System (ADS)

Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Gerhardt, Nils C.; Hofmann, Martin R.

2018-02-01

Vertical-cavity surface-emitting lasers (VCSELs) are used for short-haul optical data transmission with increasing bit rates. The optimization involves both enhanced device designs and the use of higher-order modulation formats. In order to improve the modulation bandwidth substantially, the presented work employs spin-pumped VCSELs (spin-VCSELs) and their polarization dynamics instead of relying on intensity-modulated devices. In spin-VCSELs, the polarization state of the emitted light is controllable via spin injection. By optical spin pumping a single-mode VCSEL is forced to emit light composed of both orthogonal linearly polarized fundamental modes. The frequencies of these two modes differ slightly by a value determined by the cavity birefringence. As a result, the circular polarization degree oscillates with their beat frequency, i.e., with the birefringence-induced mode splitting. We used this phenomenon to show so-called polarization oscillations, which are generated by pulsed spin injection. Their frequency represents the polarization dynamics resonance frequency and can be tuned over a wide range via the birefringence, nearly independent from any other laser parameter. In previous work we demonstrated a maximum birefringence-induced mode splitting of more than 250 GHz. In this work, compared to previous publications, we show an almost doubled polarization oscillation frequency of more than 80 GHz. Furthermore, we discuss concepts to achieve even higher values far above 100 GHz.

Development of a Compact Optical-MEMS Scanner with Integrated VCSEL Light Source and Diffractive Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krygowski, Thomas W.; Reyes, David; Rodgers, M. Steven

1999-06-30

In this work the design and initial fabrication results are reported for the components of a compact optical-MEMS laser scanning system. This system integrates a silicon MEMS laser scanner, a Vertical Cavity Surface Emitting Laser (VCSEL) and passive optical components. The MEMS scanner and VCSEL are mounted onto a fused silica substrate which serves as an optical interconnect between the devices. Two Diffractive Optical Elements (DOEs) are etched into the fused silica substrate to focus the VCSEL beam and increase the scan range. The silicon MEMS scanner consists of an actuator that continuously scans the position of a large polysiliconmore » gold-coated shuttle containing a third DOE. Interferometric measurements show that the residual stress in the 500 {micro}m x 1000 {micro}m shuttle is extremely low, with a maximum deflection of only 0.18{micro}m over an 800 {micro}m span for an unmetallized case and a deflection of 0.56{micro}m for the metallized case. A conservative estimate for the scan range is {approximately}{+-}4{degree}, with a spot size of about 0.5 mm, producing 50 resolvable spots. The basic system architecture, optical and MEMS design is reported in this paper, with an emphasis on the design and fabrication of the silicon MEMS scanner portion of the system.« less

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers.

PubMed

Germann, Tim David; Hofmann, Werner; Nadtochiy, Alexey M; Schulze, Jan-Hindrik; Mutig, Alex; Strittmatter, André; Bimberg, Dieter

2012-02-27

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for a detailed physical understanding of this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect is used to modulate individual VCSEL modes by more than 20 dB with an extremely small EOM voltage change of less than 100 mV. Spectral mode analysis reveals modulation of higher order modes and very low wavelength chirp of < 0.5 nm. Dynamic experiments and simulation predict an intrinsic bandwidth of the EOM VCSEL exceeding 50 GHz.

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Shang, C. Y.; Feng, Y.; Yan, C. L.; Zhao, Y. J.; Wang, Y. X.; Wang, X. H.; Liu, G. J.

2011-02-01

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

DTIC Science & Technology

2000-06-23

vertical cavity surface emitting lasers ( VCSELs ) on GaAs is expected to be possible by... molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can...work with GaAs/AlAs DBR-mirrors is expected to lead to novel vertical cavity lasers for optical fiber communication systems. Acknowledgement

Optical Injection Locking of a VCSEL in an OEO

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Matsko, Andrey; Savchenkov, Anatoliy; Yu, Nan; Maleki, Lute

2009-01-01

Optical injection locking has been demonstrated to be effective as a means of stabilizing the wavelength of light emitted by a vertical-cavity surface- emitting laser (VCSEL) that is an active element in the frequency-control loop of an opto-electronic oscillator (OEO) designed to implement an atomic clock based on an electromagnetically- induced-transparency resonance. This particular optical-injection- locking scheme is expected to enable the development of small, low-power, high-stability atomic clocks that would be suitable for use in applications involving precise navigation and/or communication. In one essential aspect of operation of an OEO of the type described above, a microwave modulation signal is coupled into the VCSEL. Heretofore, it has been well known that the wavelength of light emitted by a VCSEL depends on its temperature and drive current, necessitating thorough stabilization of these operational parameters. Recently, it was discovered that the wavelength also depends on the microwave power coupled into the VCSEL. Inasmuch as the microwave power circulating in the frequency-control loop is a dynamic frequency-control variable (and, hence, cannot be stabilized), there arises a need for another means of stabilizing the wavelength. The present optical-injection-locking scheme satisfies the need for a means to stabilize the wavelength against microwave- power fluctuations. It is also expected to afford stabilization against temperature and current fluctuations. In an experiment performed to demonstrate this scheme, wavelength locking was observed when about 200 W of the output power of a commercial tunable diode laser was injected into a commercial VCSEL, designed to operate in the wavelength range of 795+/-3 nm, that was generating about 200 microW of optical power. (The use of relatively high injection power levels is a usual practice in injection locking of VCSELs.)

Progress and challenges in electrically pumped GaN-based VCSELs

NASA Astrophysics Data System (ADS)

Haglund, A.; Hashemi, E.; Bengtsson, J.; Gustavsson, J.; Stattin, M.; Calciati, M.; Goano, M.

2016-04-01

ABSTRACT The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm2. The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

VCSEL technology for medical diagnostics and therapeutics

NASA Astrophysics Data System (ADS)

Hibbs-Brenner, M. K.; Johnson, K. L.; Bendett, M.

2009-02-01

In the 1990's a new laser technology, Vertical Cavity Surface Emitting Lasers, or VCSELs, emerged and transformed the data communication industry. The combination of performance characteristics, reliability and performance/cost ratio allowed high data rate communication to occur over short distances at a commercially viable price. VCSELs have not been widely used outside of this application space, but with the development of new attributes, such as a wider range of available wavelengths, the demonstration of arrays of VCSELs on a single chip, and a variety of package form factors, VCSELs can have a significant impact on medical diagnostic and therapeutic applications. One area of potential application is neurostimulation. Researchers have previously demonstrated the feasibility of using 1850nm light for nerve stimulation. The ability to create an array of VCSELs emitting at this wavelength would allow significantly improved spatial resolution, and multiple parallel channels of stimulation. For instance, 2D arrays of 100 lasers or more can be integrated on a single chip less than 2mm on a side. A second area of interest is non-invasive sensing. Performance attributes such as the narrow spectral width, low power consumption, and packaging flexibility open up new possibilities in non-invasive and/or continuous sensing. This paper will suggest ways in which VCSELs can be implemented within these application areas, and the advantages provided by the unique performance characteristics of the VCSEL. The status of VCSEL technology as a function of available wavelength and array size and form factors will be summarized.

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Single frequency stable VCSEL as a compact source for interferometry and vibrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dudzik, Grzegorz; Rzepka, Janusz

2010-05-28

Developing an innovative PS-DAVLL (Polarization Switching DAVLL) method of frequency stabilization, which used a ferroelectric liquid crystal cell as quarter wave plate, rubidium cell and developed ultra-stable current source, allowed to obtain a frequency stability of 10{sup -9}(frequency reproducibility of 1,2centre dot10{sup -8}) and reductions in external dimensions of laser source. The total power consumption is only 1,5 Watt. Because stabilization method used in the frequency standard is insensitive to vibration, the semiconductor laser interferometer was built for measuring range over one meter, which can also be used in industry for the accurate measurement of displacements with an accuracy ofmore » 1[mum/m]. Measurements of the VCSEL laser parameters are important from the standpoint of its use in laser interferometry or vibrometry, like narrow emission line DELTAnu{sub FWHM} = 70[MHz] equivalent of this laser type and stability of linear polarization of VCSEL laser. The undoubted advantage of the constructed laser source is the lack of mode-hopping effect during continuous work of VCSEL.« less

850-nm implanted and oxide VCSELs in multigigabit data communication application

NASA Astrophysics Data System (ADS)

Pan, Jin-Shan; Lin, Yung-Sen; Li, Chao-Fang A.; Lai, Horng-Ching; Wu, Chang-Cherng; Huang, Kai-Feng

2001-10-01

In this paper, we will present the results of the 850nm implanted and oxide-confined vertical cavity surface emitting lasers in multi-Gigabit application. In TrueLight, we have a lot of experience in manufacturing VCSEL with ion-implantation and wet-oxidation technologies for single device Gigabit data transmission application. The ion-implanted VCSEL is reliable with the Mean Time To Failure (MTTF) up to 108 hours at room temperature operation. For the gigabit Ethernet data communication, it provides a very promising solution in short haul application. In transmission experiment we demonstrated the devices could be modulated up to 2.5Gbps and 3.2Gbps data rate. For oxide-confined VCSEL devices, we use wet oxidation technology to approach the device processing and get very good result to achieve the mutli-gigabit data communication application in single device form. The VCSEL device with oxide aperture around 12um could be modulated up to 2.5Gbps and 3.2Gbps. A data of employing VCSEL in high data rate POF transmission is also presented.

GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): current challenges and techniques to realize multiple-wavelength laser arrays at 1.55 μm

NASA Astrophysics Data System (ADS)

Gobet, Mathilde; Bae, Hopil P.; Sarmiento, Tomas; Harris, James S.

2008-02-01

Multiple-wavelength laser arrays at 1.55 μm are key components of wavelength division multiplexing (WDM) systems for increased bandwidth. Vertical cavity surface-emitting lasers (VCSELs) grown on GaAs substrates outperform their InP counterparts in several points. We summarize the current challenges to realize continuous-wave (CW) GaInNAsSb VCSELs on GaAs with 1.55 μm emission wavelength and explain the work in progress to realize CW GaInNAsSb VCSELs. Finally, we detail two techniques to realize GaInNAsSb multiple-wavelength VCSEL arrays at 1.55 μm. The first technique involves the incorporation of a photonic crystal into the upper mirror. Simulation results for GaAs-based VCSEL arrays at 1.55 μm are shown. The second technique uses non-uniform molecular beam epitaxy (MBE). We have successfully demonstrated 1x6 resonant cavity light-emitting diode arrays at 850 nm using this technique, with wavelength spacing of 0.4 nm between devices and present these results.

VCSEL transmission at 10 Gb/s for 20 km single mode fiber WDM-PON without dispersion compensation or injection locking

NASA Astrophysics Data System (ADS)

Gibbon, T. B.; Prince, K.; Pham, T. T.; Tatarczak, A.; Neumeyr, C.; Rönneberg, E.; Ortsiefer, M.; Monroy, I. Tafur

2011-01-01

Vertical Cavity Surface Emitting Lasers (VCSELs) are extremely cost effective, energy efficient optical sources ideal for passive optical access networks. However, wavelength chirp and chromatic dispersion severely limit VCSEL performance at bit rates of 10 Gb/s and above. We experimentally show how off-center wavelength filtering of the VCSEL spectrum at an array waveguide grating can be used to mitigate the effect of chirp and the dispersion penalty. Transmission at 10 Gb/s VCSEL over 23.6 km of single mode fiber is experimentally demonstrated, with a dispersion penalty of only 2.9 dB. Simulated results are also presented which show that off-center wavelength filtering can extend the 10 Gb/s network reach from 11.7 km to 25.8 km for a 4 dB dispersion penalty. This allows for cheap and simple dispersion mitigation in next generation VCSEL-based optical access networks.

Vertical-cavity surface-emitting lasers: the applications

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.; Liu, Yue; Bristow, Julian P. G.

1997-05-01

In this paper, we focus on how vertical-cavity surface- emitting lasers (VCSELs) and arrays have led to many feasible advanced technological applications. Their intrinsic characteristics, performance, and producibility offer substantial advantages over alternative sources. Demonstrated performance of `commercial-grade' VCSELs include low operating powers (< 2 V, mAs), high speeds (3 dB BWs > 15 GHz), and high temperature operating ranges (10 K to 400 K and -55 degree(s)C to 125 degree(s)C, and T > 200 degree(s)C). Moreover, their robustness is manifest by high reliability in excess of 107 hours mean time between failures at room temperature and tenfold improvement over existing rad-hard LEDs. Hence, even these `commercial-grade' VCSELs offer potential within cryogenic and avionics/military or space environments. We have also demonstrated submilliamp ITH, stable, single-mode VCSELs utilized within bias-free 1-Gbit/s data links. These low- power VCSELs may also serve in applications from printers to low-cost atomic clocks. The greatest near-term VCSEL applications are upgrades to low-cost LEDs and high-grade copper wire in data links and sensors. Exploiting their surface-emitting geometry, VCSELs are also compatible with established multichip module packaging. Hence VCSELs and VCSEL arrays are ideal components for interconnect-intensive processing applications between and within computing systems.

Integrated photodiodes complement the VCSEL platform

NASA Astrophysics Data System (ADS)

Grabherr, Martin; Gerlach, Philipp; King, Roger; Jäger, Roland

2009-02-01

Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.

Spatial Light Modulators with Arbitrary Quantum Well Profiles

DTIC Science & Technology

1991-01-14

vertical cavity surface emitting lasers ( VCSEL ) is also...aDlications stemming from the research effort. An application of the MBE compositional grading technique to vertical cavity surface emitting lasers was described in section 2e. G. Other statements ... cavity surface emitting laser ( VCSEL ). This uses compositionally graded Bragg reflectors to reduce the electrical resistance of the mirrors

Development of integrated semiconductor optical sensors for functional brain imaging

NASA Astrophysics Data System (ADS)

Lee, Thomas T.

Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

High-speed wavelength switching of tunable MEMS vertical cavity surface emitting laser by ringing suppression

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Nishimura, Shun; Nakahama, Masanori; Matsutani, Akihiro; Sakaguchi, Takahiro; Koyama, Fumio

2018-04-01

For use in wavelength division multiplexing (WDM) with high-speed wavelength routing functions, the fast wavelength switching of tunable lasers is a key function. A tunable MEMS vertical cavity surface emitting laser (VCSEL) is a good candidate as a light source for this purpose. The cantilever in MEMS VCSELs has a high mechanical resonance frequency thanks to its small size, but the switching time is limited by the ringing of the cantilever structure. In this paper, we analyzed the mechanical behavior of a cantilever MEMS mirror and demonstrated ringing-free operation with an engineered voltage signal. The applied voltage waveform was optimized in a two-step format and we experimentally obtained ringing free wavelength switching. We measured the transient response of the wavelength by inserting a tunable filter, exhibiting the settling time of less than 2.5 µs, which corresponds to a half period of the cantilever resonance frequency.

Single-mode VCSEL operation via photocurrent feedback

NASA Astrophysics Data System (ADS)

Riyopoulos, Spilios

1999-04-01

On-axis channeling through the use of photoactive layers in VCSEL cavities is proposed to counteract hole burning and mode switching. The photoactive layers act as variable resistivity screens whose radial `aperture' is controlled by the light itself. It is numerically demonstrated that absorption of a small fraction of the light intensity suffices for significant on axis current peaking and single mode operation at currents many times threshold, with minimum efficiency loss and optical mode distortion. Fabrication is implemented during the molecular beam epitaxy phase without wafer post processing, as for oxide apertures.

Optical levitation and translation of a microscopic particle by use of multiple beams generated by vertical-cavity surface-emitting laser array sources.

PubMed

Ogura, Yusuke; Shirai, Nobuhiro; Tanida, Jun

2002-09-20

An optical levitation and translation method for a microscopic particle by use of the resultant force induced by multiple light beams is studied. We show dependence of the radiation pressure force on the illuminating distribution by numerical calculation, and we find that the strongest axial force is obtained by a specific spacing period of illuminating beams. Extending the optical manipulation technique by means of vertical-cavity surface-emitting laser (VCSEL) array sources [Appl. Opt. 40, 5430 (2001)], we are the first, to our knowledge, to demonstrate levitation of a particle and its translation while levitated by using a VCSEL array. The vertical position of the target particle can be controlled in a range of a few tens of micrometers with an accuracy of 2 microm or less. The analytical and experimental results suggest that use of multiple beams is an effective method to levitate a particle with low total illumination power. Some issues on the manipulation method that uses multiple beams are discussed.

10 m/25 Gbps LiFi transmission system based on a two-stage injection-locked 680 nm VCSEL transmitter.

PubMed

Lu, Hai-Han; Li, Chung-Yi; Chu, Chien-An; Lu, Ting-Chien; Chen, Bo-Rui; Wu, Chang-Jen; Lin, Dai-Hua

2015-10-01

A 10  m/25  Gbps light-based WiFi (LiFi) transmission system based on a two-stage injection-locked 680 nm vertical-cavity surface-emitting laser (VCSEL) transmitter is proposed. A LiFi transmission system with a data rate of 25 Gbps is experimentally demonstrated over a 10 m free-space link. To the best of our knowledge, it is the first time a two-stage injection-locked 680 nm VCSEL transmitter in a 10  m/25  Gbps LiFi transmission system has been employed. Impressive bit error rate performance and a clear eye diagram are achieved in the proposed systems. Such a 10  m/25  Gbps LiFi transmission system provides the advantage of a communication link for higher data rates that could accelerate the deployment of visible laser light communication.

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

NASA Astrophysics Data System (ADS)

Xia, Jinan; Hoan O, Beom; Gol Lee, Seung; Hang Lee, El

2005-03-01

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of 1.55 μm. The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.

Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top

PubMed Central

Islam, Samiha Ishrat; Islam, Arnob; Islam, Saiful

2014-01-01

In this work, an integrated single chip dual cavity VCSEL has been designed which comprises an electrically pumped 980 nm bottom VCSEL section fabricated using GaInAs/AlGaAs MQW active region and a 1550 nm top VCSEL section constructed using GaInAs/AlGaInAs MQW active region but optically pumped using half of the produced 980 nm light entering into it from the electrically pumped bottom cavity. In this design, the active region of the intracavity structure 980 nm VCSEL consists of 3 quantum wells (QWs) using Ga0.847In0.153As, 2 barriers using Al0.03Ga0.97As, and 2 separate confinement heterostructures (SCH) using the same material as the barrier. The active region of the top emitting 1550 nm VCSEL consists of 3 QWs using Ga0.47In0.52As, 2 barriers using Al0.3Ga0.17In0.53As, and 2 SCHs using the same material as the barrier. The top DBR and the bottom DBR mirror systems of the 1550 nm VCSEL section plus the top and bottom DBR mirror systems of the 980 nm VCSEL section have been formed using GaAs/Al0.8Ga0.2As. Computations show that the VCSEL is capable of producing 8.5 mW of power at 980 nm from the bottom side and 2 mW of power at the 1550 nm from top side. PMID:27379335

Red vertical cavity surface emitting lasers (VCSELs) for consumer applications

NASA Astrophysics Data System (ADS)

Duggan, Geoffrey; Barrow, David A.; Calvert, Tim; Maute, Markus; Hung, Vincent; McGarvey, Brian; Lambkin, John D.; Wipiejewski, Torsten

2008-02-01

There are many potential applications of visible, red (650nm - 690nm) vertical cavity surface emitting lasers (VCSELs) including high speed (Gb) communications using plastic optical fiber (POF), laser mouse sensors, metrology, position sensing. Uncertainty regarding the reliability of red VCSELs has long been perceived as the most significant roadblock to their commercialization. In this paper we will present data on red VCSELs optimized for performance and reliability that will allow exploitation of this class of VCSEL in a wide range of high volume consumer, communication and medical applications. VCSELs operating at ~665nm have been fabricated on 4" GaAs substrates using MOCVD as the growth process and using standard VCSEL processing technology. The active region is AlGaInP-based and the DBR mirrors are made from AlGaAs. Threshold currents are typically less than 2mA, the devices operate up to >60C and the light output is polarized in a stable, linear characteristic over all normal operating conditions. The 3dB modulation bandwidth of the devices is in excess of 3GHz and we have demonstrated the operation of a transceiver module operating at 1.25Gb/s over both SI-POF and GI-POF. Ageing experiments carried out using a matrix of current and temperature stress conditions allows us to estimate that the time to failure of 1% of devices (TT1%F) is over 200,000h for reasonable use conditions - making these red VCSELs ready for commercial exploitation in a variety of consumer-type applications. Experiments using appropriate pulsed driving conditions have resulted in operation of 665nm VCSELs at a temperature of 85°C whilst still offering powers useable for eye-safe free space and POF communications.

Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating

NASA Astrophysics Data System (ADS)

Lai, Fang-I.; Chang, Ya-Hsien; Laih, Li-Hong; Kuo, Hao-chung; Wang, S. C.

2004-06-01

Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/ITO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents ~3 mA, and the slope efficiencies ~ 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.

High power high repetition rate VCSEL array side-pumped pulsed blue laser

NASA Astrophysics Data System (ADS)

van Leeuwen, Robert; Zhao, Pu; Chen, Tong; Xu, Bing; Watkins, Laurence; Seurin, Jean-Francois; Xu, Guoyang; Miglo, Alexander; Wang, Qing; Ghosh, Chuni

2013-03-01

High power, kW-class, 808 nm pump modules based on the vertical-cavity surface-emitting laser (VCSEL) technology were developed for side-pumping of solid-state lasers. Two 1.2 kW VCSEL pump modules were implemented in a dual side-pumped Q-switched Nd:YAG laser operating at 946 nm. The laser output was frequency doubled in a BBO crystal to produce pulsed blue light. With 125 μs pump pulses at a 300 Hz repetition rate 6.1 W QCW 946 nm laser power was produced. The laser power was limited by thermal lensing in the Nd:YAG rod.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Polarization-dependent coupling between a polarization-independent high-index-contrast subwavelength grating and waveguides

NASA Astrophysics Data System (ADS)

Katayama, Takeo; Ito, Jun; Kawaguchi, Hitoshi

2016-07-01

We investigated the optical coupling between a polarization-independent high-index-contrast subwavelength grating (HCG) and two orthogonal in-plane waveguides. We fabricated the HCG with waveguides on a silicon-on-insulator substrate and demonstrated that a waveguide with a strong output is switched by changing the polarization of light injected into the HCG. The light coupled more strongly to the waveguide in the direction perpendicular to the polarization of the incident light than to that in the parallel direction. If this waveguide-coupled HCG is incorporated into a polarization bistable vertical-cavity surface-emitting laser (VCSEL), the output waveguide can be switched by changing the lasing polarization of the VCSEL.

Optical Characterizations of VCSEL for Emission at 850 nm with Al Oxide Confinement Layers

NASA Astrophysics Data System (ADS)

Mokhtari, Merwan; Pagnod-Rossiaux, Philippe; Laruelle, Francois; Landesman, Jean-Pierre; Moreac, Alain; Levallois, Christophe; Cassidy, Daniel T.

2018-03-01

In-plane micro-photoluminescence (μ-PL) and micro-reflectivity measurements have been performed at room temperature by optical excitation perpendicular to the surface of two different structures: a complete vertical surface-emitting laser (VCSEL) structure and a VCSEL without the upper p-type distributed Bragg reflector (P-DBR). The two structures were both laterally oxidized and measurements were made on the top of oxidized and unoxidized regions. We show that, since the photoluminescence (PL) spectra consist of the cumulative effect of InGaAs/AlGaAs multi-quantum wells (MQWs) luminescence and interferences in the DBR, the presence or not of the P-DBR and oxide layers can significantly modify the spectrum. μ-PL mapping performed on full VCSEL structures clearly shows oxidized and unoxidized regions that are not resolved with visible light optical microscopy. Finally, preliminary measurements of the degree of polarization (DOP) of the PL have been made on a complete VCSEL structure before and after an oxidation process. We obtain an image of DOP measured by polarization-resolved μ-PL. These measurements allow us to evaluate the main components of strain.

Long-wavelength vertical-cavity laser research at Gore

NASA Astrophysics Data System (ADS)

Jayaraman, Vijaysekhar; Geske, J. C.; MacDougal, Michael H.; Peters, Frank H.; Lowes, Ted D.; Char, T. T.; Van Deusen, Dale R.; Goodnough, T.; Donhowe, Mark N.; Kilcoyne, Sean P.; Welch, David J.

1999-04-01

Vertical cavity surface emitting lasers (VCSELs) operating near 1310 or 1550 nm have been the subject of intensive research by multiple groups for several years. In the past year at Gore, we have demonstrated the first 1300 nm VCSELs which operate with useful power, high modulation rate, and low voltage over the commercial temperature range of 0 - 70 degree(s)C. These results have been achieved using a new structure in which an 850 nm VCSEL optical pump is integrated with the 1300 nm VCSEL. Electrical drive is applied to the 850 nm pump, and 1300 nm light is emitted from the integrated structure. This approach has resulted in over a milliwatt of single transverse mode power at room temperature, and several hundred microwatts of single transverse mode power at 70 degree(s)C. In addition, these devices demonstrate multi-gigabit modulation and excellent coupling efficiency to single-mode fiber.

Communication using VCSEL laser array

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

2008-01-01

Ultrafast directional beam switching, using coupled vertical cavity surface emitting lasers (VCSELs) is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and directional beam switching with angular differences of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches. A Mach-Zehnder interferometer, a Fabry-Perot etalon, or a semiconductor-based electro-absorption transmission channel, among others, can be used as a light modulator.

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

NASA Astrophysics Data System (ADS)

Grenouillet, L.; Duvaut, P.; Olivier, N.; Gilet, P.; Grosse, P.; Poncet, S.; Philippe, P.; Pougeoise, E.; Fulbert, L.; Chelnokov, A.

2006-07-01

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

1W frequency-doubled VCSEL-pumped blue laser with high pulse energy

NASA Astrophysics Data System (ADS)

Van Leeuwen, Robert; Chen, Tong; Watkins, Laurence; Xu, Guoyang; Seurin, Jean-Francois; Wang, Qing; Zhou, Delai; Ghosh, Chuni

2015-02-01

We report on a Q-switched VCSEL side-pumped 946 nm Nd:YAG laser that produces high average power blue light with high pulse energy after frequency doubling in BBO. The gain medium was water cooled and symmetrically pumped by three 1 kW 808 nm VCSEL pump modules. More than 1 W blue output was achieved at 210 Hz with 4.9 mJ pulse energy and at 340 Hz with 3.2 mJ pulse energy, with 42% and 36% second harmonic conversion efficiency respectively. Higher pulse energy was obtained at lower repetition frequencies, up to 9.3 mJ at 70 Hz with 52% conversion efficiency.

Novel hybrid laser modes in composite VCSEL-DFB microcavities (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mischok, Andreas; Wagner, Tim; Sudzius, Markas; Brückner, Robert; Fröb, Hartmut; Lyssenko, Vadim G.; Leo, Karl

2017-02-01

Two of the most successful microcresonator concepts are the vertical cavity surface emitting laser (VCSEL), where light is confined between distributed Bragg reflectors (DBRs), and the distributed feedback (DFB) laser, where a periodic grating provides positive optical feedback to selected modes in an active waveguide (WG) layer. Our work concerns the combination of both into a composite device, facilitating coherent interaction between both regimes and giving rise to novel laser modes in the system. In a first realization, a full VCSEL stack with an organic active layer is evaporated on top of a diffraction grating with a large period (approximately 1 micron), leading to diffraction of waveguided modes into the surface emission of the device. Here, the coherent interaction between VCSEL and WG modes, as observed in an anticrossing of the dispersion lines, facilitates novel hybrid lasing modes with macroscopic in-plane coherence [1]. In further studies, we decrease the grating period of such devices to realise DFB conditions in a second-order Bragg grating which strongly couples photons via first-order light diffraction to the VCSEL. This efficient coupling can be compared to more classical cascade-coupled cavities and is successfully described by a coupled oscillator model [2]. When both resonators are non-degenerate, they are able to function as independent structures without substantial diffraction losses. The realization of such novel devices provides a promising platform for photonic circuits based on organic microlasers. [1] A. Mischok et al., Adv. Opt. Mater., early online, DOI: 10.1002/adom.201600282, (2016) [2] T. Wagner et al., Appl. Phys. Lett., accepted, in production, (2016)

Near Field and Far Field Effects in the Taguchi-Optimized Design of AN InP/GaAs-BASED Double Wafer-Fused Mqw Long-Wavelength Vertical-Cavity Surface-Emitting Laser

NASA Astrophysics Data System (ADS)

Menon, P. S.; Kandiah, K.; Mandeep, J. S.; Shaari, S.; Apte, P. R.

Long-wavelength VCSELs (LW-VCSEL) operating in the 1.55 μm wavelength regime offer the advantages of low dispersion and optical loss in fiber optic transmission systems which are crucial in increasing data transmission speed and reducing implementation cost of fiber-to-the-home (FTTH) access networks. LW-VCSELs are attractive light sources because they offer unique features such as low power consumption, narrow beam divergence and ease of fabrication for two-dimensional arrays. This paper compares the near field and far field effects of the numerically investigated LW-VCSEL for various design parameters of the device. The optical intensity profile far from the device surface, in the Fraunhofer region, is important for the optical coupling of the laser with other optical components. The near field pattern is obtained from the structure output whereas the far-field pattern is essentially a two-dimensional fast Fourier Transform (FFT) of the near-field pattern. Design parameters such as the number of wells in the multi-quantum-well (MQW) region, the thickness of the MQW and the effect of using Taguchi's orthogonal array method to optimize the device design parameters on the near/far field patterns are evaluated in this paper. We have successfully increased the peak lasing power from an initial 4.84 mW to 12.38 mW at a bias voltage of 2 V and optical wavelength of 1.55 μm using Taguchi's orthogonal array. As a result of the Taguchi optimization and fine tuning, the device threshold current is found to increase along with a slight decrease in the modulation speed due to increased device widths.

Thermal wave interference with high-power VCSEL arrays for locating vertically oriented subsurface defects

NASA Astrophysics Data System (ADS)

Thiel, Erik; Kreutzbruck, Marc; Studemund, Taarna; Ziegler, Mathias

2018-04-01

Among the photothermal methods, full-field thermal imaging is used to characterize materials, to determine thicknesses of layers, or to find inhomogeneities such as voids or cracks. The use of classical light sources such as flash lamps (impulse heating) or halogen lamps (modulated heating) led to a variety of nondestructive testing methods, in particular, lock-in and flash-thermography. In vertical-cavity surface-emitting lasers (VCSELs), laser light is emitted perpendicularly to the surface with a symmetrical beam profile. Due to the vertical structure, they can be arranged in large arrays of many thousands of individual lasers, which allows power scaling into the kilowatt range. Recently, a high-power yet very compact version of such a VCSEL-array became available that offers both the fast timing behavior of a laser as well as the large illumination area of a lamp. Moreover, it allows a spatial and temporal control of the heating because individual parts of the array can be controlled arbitrarily in frequency, amplitude, and phase. In conjunction with a fast infrared camera, such structured heating opens up a field of novel thermal imaging and testing methods. As a first demonstration of this approach, we chose a testing problem very challenging to conventional thermal infrared testing: The detection of very thin subsurface defects perpendicularly oriented to the surface of metallic samples. First, we generate destructively interfering thermal wave fields, which are then affected by the presence of defects within their reach. It turned out that this technique allows highly sensitive detection of subsurface defects down to depths in excess of the usual thermographic rule of thumb, with no need for a reference or surface preparation.

A fundamental mode Nd:GdVO4 laser pumped by a large aperture 808 nm VCSEL

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Ma, J. L.; Yan, C. L.; Liu, G. J.; Ma, X. H.; Gong, J. F.; Feng, Y.; Wei, Z. P.; Wang, Y. X.; Zhao, Y. J.

2013-05-01

A fundamental mode Nd:GdVO4 laser pumped by a vertical cavity surface emitting laser (VCSEL) is experimentally demonstrated. The VCSEL has a circular output-beam which makes it easier for it to be directly coupled to a Nd:GdVO4 microcrystal. In our research, a large aperture 808 nm VCSEL, with a multi-ring-shaped aperture (MRSA) and an almost Gaussian-shaped far-field profile, is used as the pumping source. Experimental results for the Nd:GdVO4 laser pumped by the VCSEL are presented. The maximum output peak power of 0.754 W is obtained under a pump peak power of 1.3 W, and the corresponding opto-optic conversion efficiency is 58.1%. The average slope efficiency is 65.8% from the threshold pump power of 0.2 W to the pump power of 1.3 W. The laser beam quality factors are measured to be {M}x2=1.2 0 and {M}y2=1.1 5.

VCSEL technologies and applications

NASA Astrophysics Data System (ADS)

Steinle, Gunther; Ramakrishnan, A.; Supper, D.; Kristen, Guenter; Pfeiffer, J.; Degen, Ch.; Riechert, Henning; Ebbinghaus, G.; Wolf, H. D.

2002-07-01

VCSEL devices for 850nm and 1300nm emission wavelength are presented, suitable for operation in single-channel interconnects as well as parallel optical links. Necessary properties for applications such as 10 Gigabit Ethernet and actual limits for the use of VCSELs are discussed in some detail. Recent progress is demonstrated in developing devices with production-friendly diameters larger than 5´m for 10Gbit/s operation. Also devices with a temperature insensitive monolithically integrated monitordiode are presented and discussed. In order to reach the emission wavelength of 1300nm with a GaAs-based monolithic VCSEL-structure, we use GaInNxAs1-x quantum-wells with a small nitrogen concentration x between one and two percent. We have two different growth approaches, such as solid source MBE with a rf-plasma source to produce reactive nitrogen from nitrogen gas N2 and MOCVD with unsymmetrical di-methylhydrazine as a precursor for nitrogen. The long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. Bitrates up to 10Gbit/s per channel can be achieved within both wavelength regimes.

Semiconductor laser joint study program with Rome Laboratory

NASA Astrophysics Data System (ADS)

Schaff, William J.; Okeefe, Sean S.; Eastman, Lester F.

1994-09-01

A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.

High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

NASA Astrophysics Data System (ADS)

Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

2013-03-01

High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

780nm-range VCSEL array for laser printer system and other applications at Ricoh

NASA Astrophysics Data System (ADS)

Jikutani, Naoto; Itoh, Akihiro; Harasaka, Kazuhiro; Sasaki, Toshihide; Sato, Shunichi

2016-03-01

A 780 nm-range 40 channels vertical-cavity surface-emitting laser (VCSEL) array was developed as a writing light source for printers. A 15° off missoriented GaAs substrate, an aluminum-free GaInAsP/GaInP compressively-strained multiple quantum well and an anisotropic-shape transverse-mode filter were employed to control polarization characteristics. The anisotropic-shape transverse-mode filter also suppressed higher transverse-mode and enabled high-power single-mode operation. Thus, orthogonal-polarization suppression-ratio (OPSR) of over 22 dB and side-mode suppression-ratio (SMSR) of 30 dB were obtained at operation power of 3mW at same time for wide oxide-aperture range below 50 μm2. Moreover, a thermal resistance was reduced for 38% by increasing a thickness of high thermal conductivity layer (3λ/4-AlAs layer) near a cavity. By this structure, a peak-power increased to 1.3 times. Moreover, a power-fall caused by self-heating at pulse-rise was decreased to 10% and the one caused by a thermal-crosstalk between channels was decreased to 46%. The VCSEL array was mounted in a ceramic package with a tilted seal glass to prevent optical-crosstalk caused by other channels. Thus, we achieved stable-output and high-quality beam characteristics for long-duration pulse drive.

Applications of 1.55 μm optically injection-locked VCSELs in wavelength division multiplexed passive optical networks

NASA Astrophysics Data System (ADS)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.; Hofmann, Werner; Amann, Marcus C.

2007-11-01

In this paper, we will discuss the utilization of optically injection-locked (OIL) 1.55 μm vertical-cavity surface-emitting lasers (VCSELs) for operation as low-cost, stable, directly modulated, and potentially uncooled transmitters, whereby the injection-locking master source is furnished by modulated downstream signals. Such a transmitter will find useful application in wavelength division multiplexed passive optical networks (WDM-PONs) which is actively being developed to meet the ever-increasing bandwidth demands of end users. Our scheme eliminates the need for external injection locking optical sources, external modulators, and wavelength stabilization circuitry. We show through experiments that the injection-locked VCSEL favors low injection powers and responds only strongly to the carrier but not the modulated data of the downstream signal. Further, we will discuss results from experimental studies performed on the dependence of OIL-VCSELs in bidirectional networks on the degree of Rayleigh backscattered signal and extinction ratio. We show that error-free upstream performance can be achieved when the upstream signal to Rayleigh backscattering ratio is greater than 13.4 dB, and with minimal dependence on the downstream extinction ratio. We will also review a fault monitoring and localization scheme based on a highly-sensitive yet low-cost monitor comprising a low output power broadband source and low bandwidth detectors. The proposed scheme benefits from the high reflectivity top distributed Bragg reflector mirror of the OIL-VCSEL, incurring only a minimal penalty on the upstream transmissions of the existing infrastructure. Such a scheme provides fault monitoring without having to further invest in the upgrade of customer premises.

Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.

2001-01-01

Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

VCSEL End-Pumped Passively Q-Switched Nd:YAG Laser with Adjustable Pulse Energy

DTIC Science & Technology

2011-02-28

entire VCSEL array. Neglecting lens aberrations, the focused spot diameter is given by focal length of the lens times the full divergence angle of the...pump intensity distribution generated by a pump-light-focusing lens . ©2011 Optical Society of America OCIS codes: (140.3530) Lasers Neodymium...Passive Q-Switch and Brewster Plate in a Pulsed Nd: YAG Laser,” IEEE J. Quantum Electron. 31(10), 1738–1741 (1995). 6. G. Xiao, and M. Bass, “A

Photonic heterostructure High Contrast Grating as a novel polarization control and light confinement system in HCG VCSEL

NASA Astrophysics Data System (ADS)

Gebski, M.; Dems, M.; Chen, J.; Qijie, W.; Dao Hua, Z.; Czyszanowski, T.

2014-05-01

In this paper we present results of computer optical simulations of VCSEL with modified high refractive index contrast grating (HCG) as a top mirror. We consider the HCG of two different designs which determine the lateral aperture. Such HCG mirror provides selective guiding effect. We show that proper design of aperture of HCG results in almost sixfold increase in cavity Q-factor for zero order mode and a discrimination of higher order modes.

Swept-source optical coherence tomography powered by a 1.3-μm vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo

NASA Astrophysics Data System (ADS)

Choi, Woo June; Wang, Ruikang K.

2015-10-01

We report noninvasive, in vivo optical imaging deep within a mouse brain by swept-source optical coherence tomography (SS-OCT), enabled by a 1.3-μm vertical cavity surface emitting laser (VCSEL). VCSEL SS-OCT offers a constant signal sensitivity of 105 dB throughout an entire depth of 4.25 mm in air, ensuring an extended usable imaging depth range of more than 2 mm in turbid biological tissue. Using this approach, we show deep brain imaging in mice with an open-skull cranial window preparation, revealing intact mouse brain anatomy from the superficial cerebral cortex to the deep hippocampus. VCSEL SS-OCT would be applicable to small animal studies for the investigation of deep tissue compartments in living brains where diseases such as dementia and tumor can take their toll.

Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration

NASA Astrophysics Data System (ADS)

Geske, Jon

Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform. This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process. Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range. The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM. The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak operating temperature of the devices. This thesis investigates the integration and fabrication technologies required to fabricate ultra-wideband WDM VCSEL arrays. The complete device design and fabrication process is presented along with actual device results from completed CWDM VCSEL arrays. Future recommendations for improvements are presented, along with a roadmap toward a final electrically-pumped single-chip source for CWDM applications.

Free-Space Optical Interconnect Employing VCSEL Diodes

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

2009-01-01

Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Lasing from active optomechanical resonators

PubMed Central

Czerniuk, T.; Brüggemann, C.; Tepper, J.; Brodbeck, S.; Schneider, C.; Kamp, M.; Höfling, S.; Glavin, B. A.; Yakovlev, D. R.; Akimov, A. V.; Bayer, M.

2014-01-01

Planar microcavities with distributed Bragg reflectors (DBRs) host, besides confined optical modes, also mechanical resonances due to stop bands in the phonon dispersion relation of the DBRs. These resonances have frequencies in the 10- to 100-GHz range, depending on the resonator’s optical wavelength, with quality factors exceeding 1,000. The interaction of photons and phonons in such optomechanical systems can be drastically enhanced, opening a new route towards the manipulation of light. Here we implemented active semiconducting layers into the microcavity to obtain a vertical-cavity surface-emitting laser (VCSEL). Thereby, three resonant excitations—photons, phonons and electrons—can interact strongly with each other providing modulation of the VCSEL laser emission: a picosecond strain pulse injected into the VCSEL excites long-living mechanical resonances therein. As a result, modulation of the lasing intensity at frequencies up to 40 GHz is observed. From these findings, prospective applications of active optomechanical resonators integrated into nanophotonic circuits may emerge. PMID:25008784

Thermally stable surface-emitting tilted wave laser

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Kalosha, V. P.; Ledentsov, N.; Agustin, M.; Kropp, J. R.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu; Kulagina, M. M.; Zhukov, A. E.

2018-02-01

Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in-plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs-based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non-alloyed metal grid. Rectangular-shaped 400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of 70 μm. 7 μm-wide metal stripes serve as non-alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL-like mode at 854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field 10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of 840 nm at room temperature, emitting light at two symmetric lobes at tilt angles 40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of 1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in-plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM-polarized surface-trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L-I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

Ultrahigh speed endoscopic swept source optical coherence tomography using a VCSEL light source and micromotor catheter

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Han; Ahsen, Osman O.; Lee, Hsiang-Chieh; Liang, Kaicheng; Giacomelli, Michael G.; Potsaid, Benjamin M.; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Kraus, Martin F.; Hornegger, Joachim; Figueiredo, Marisa; Huang, Qin; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

2014-03-01

We developed an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor based imaging catheter, which provided an imaging speed of 600 kHz axial scan rate and 8 μm axial resolution in tissue. The micromotor catheter was 3.2 mm in diameter and could be introduced through the 3.7 mm accessory port of an endoscope. Imaging was performed at 400 frames per second with an 8 μm spot size using a pullback to generate volumetric data over 16 mm with a pixel spacing of 5 μm in the longitudinal direction. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing standard upper and lower endoscopy at the Veterans Affairs Boston Healthcare System (VABHS). Patients with Barrett's esophagus, dysplasia, and inflammatory bowel disease were imaged. The use of distally actuated imaging catheters allowed OCT imaging with more flexibility such as volumetric imaging in the terminal ileum and the assessment of the hiatal hernia using retroflex imaging. The high rotational stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face and cross-sectional imaging. The ability to perform 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies to investigate the ability of OCT to detect pathology as well as assess treatment response.

Active implant for optoacoustic natural sound enhancement

NASA Astrophysics Data System (ADS)

Mohrdiek, S.; Fretz, M.; Jose James, R.; Spinola Durante, G.; Burch, T.; Kral, A.; Rettenmaier, A.; Milani, R.; Putkonen, M.; Noell, W.; Ortsiefer, M.; Daly, A.; Vinciguerra, V.; Garnham, C.; Shah, D.

2017-02-01

This paper summarizes the results of an EU project called ACTION: ACTive Implant for Optoacoustic Natural sound enhancement. The project is based on a recent discovery that relatively low levels of pulsed infrared laser light are capable of triggering activity in hair cells of the partially hearing (hearing impaired) cochlea and vestibule. The aim here is the development of a self-contained, smart, highly miniaturized system to provide optoacoustic stimuli directly from an array of miniature light sources in the cochlea. Optoacoustic compound action potentials (oaCAP) are generated by the light source fully inserted into the unmodified cochlea. Previously, the same could only be achieved with external light sources connected to a fiber optic light guide. This feat is achieved by integrating custom made VCSEL arrays at a wavelength of about 1550 nm onto small flexible substrates. The laser light is collimated by a specially designed silicon-based ultra-thin lens (165 um thick) to get the energy density required for the generation of oaCAP signals. A dramatic miniaturization of the packaging technology is also required. A long term biocompatible and hermetic sapphire housing with a size of less than a 1 cubic millimeter and miniature Pt/PtIr feedthroughs is developed, using a low temperature laser assisted process for sealing. A biofouling thin film protection layer is developed to avoid fibrinogen and cell growth on the system.

GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELs

NASA Astrophysics Data System (ADS)

Almuneau, G.; Laaroussi, Y.; Chevallier, C.; Genty, F.; Fressengeas, N. s.; Cerutti, L.; Gauthier-Lafaye, Olivier

2015-02-01

Mid-infrared Vertical cavity surface emitting lasers (MIR-VCSEL) are very attractive compact sources for spectroscopic measurements above 2μm, relevant for molecules sensing in various application domains. A long-standing issue for long wavelength VCSEL is the large structure thickness affecting the laser properties, added for the MIR to the tricky technological implementation of the antimonide alloys system. In this paper, we propose a new geometry for MIR-VCSEL including both a lateral confinement by an oxide aperture, and a high-contrast sub-wavelength grating mirror (HCG mirror) formed by the high contrast combination AIOx/GaAs in place of GaSb/A|AsSb top Bragg reflector. In addition to drastically simplifying the vertical stack, HCG mirror allows to control through its design the beam properties. The robust design of the HCG has been ensured by an original method of optimization based on particle swarm optimization algorithm combined with an anti-optimization one, thus allowing large error tolerance for the nano-fabrication. Oxide-based electro-optical confinement has been adapted to mid-infrared lasers, byusing a metamorphic approach with (Al) GaAs layer directly epitaxially grown on the GaSb-based VCSEL bottom structure. This approach combines the advantages of the will-controlled oxidation of AlAs layer and the efficient gain media of Sb-based for mid-infrared emission. We finally present the results obtained on electrically pumped mid-IR-VCSELs structures, for which we included oxide aperturing for lateral confinement and HCG as high reflectivity output mirrors, both based on AlxOy/GaAs heterostructures.

Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

NASA Astrophysics Data System (ADS)

Sze, Theresa; Mahbobzadeh, A. M.; Cheng, Julian; Hersee, Stephen D.; Osinski, Marek; Brueck, Steven R. J.; Malloy, Kevin J.

1993-06-01

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

Wideband Electrically-Pumped 1050 nm MEMS-Tunable VCSEL for Ophthalmic Imaging.

PubMed

John, Demis D; Burgner, Christopher B; Potsaid, Benjamin; Robertson, Martin E; Lee, Byung Kun; Choi, Woo Jhon; Cable, Alex E; Fujimoto, James G; Jayaraman, Vijaysekhar

2015-08-15

In this paper, we present a 1050 nm electrically-pumped micro-electro-mechanically-tunable vertical-cavity-surface-emitting-laser (MEMS-VCSEL) with a record dynamic tuning bandwidth of 63.8 nm, suitable for swept source optical coherence tomography (SS-OCT) imaging. These devices provide reduced cost & complexity relative to previously demonstrated optically pumped devices by obviating the need for a pump laser and associated hardware. We demonstrate ophthalmic SS-OCT imaging with the electrically-pumped MEMS-VCSEL at a 400 kHz axial scan rate for wide field imaging of the in vivo human retina over a 12 mm × 12 mm field and for OCT angiography of the macula over 6 mm × 6 mm & 3 mm × 3 mm fields to show retinal vasculature and capillary structure near the fovea. These results demonstrate the feasibility of electrically pumped MEMS-VCSELs in ophthalmic instrumentation, the largest clinical application of OCT. In addition, we estimate that the 3 dB coherence length in air is 225 meters ± 51 meters, far greater than required for ophthalmic SS-OCT and suggestive of other distance ranging applications.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

PubMed

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-01

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

Reliability and commercialization of oxidized VCSEL

NASA Astrophysics Data System (ADS)

Li, Alice; Pan, Jin-Shan; Lai, Horng-Ching; Lee, Bor-Lin; Wu, Jack; Lin, Yung-Sen; Huo, Tai-Chan; Wu, Calvin; Huang, Kai-Feng

2003-06-01

The reliability of oxidized VCSEL has similar result to implanted VCSEL. This paper presents our work on reliability data of oxidized VCSEL device and also the comparison with implanted VCSEL. The MTTF of oxidized VCSEL is 2.73 x 106 hrs at 55°C, 6 mA and failure rate ~ 1 FITs for the first 2 years operation. The reliability data of oxidized VCSEL includes activation energy, MTTF (mean-time-to failure), failure rate prediction, and 85°C / 85% humidity test will be presented below. Commercialization of oxidized VCSEL is demonstrated such as VCSEL structure, manufacturing facility, and packaging. A cost effective approach is key to its success in applications such as Datacomm.

Integrated bio-fluorescence sensor.

PubMed

Thrush, Evan; Levi, Ofer; Ha, Wonill; Wang, Ke; Smith, Stephen J; Harris, James S

2003-09-26

Due to the recent explosion in optoelectronics for telecommunication applications, novel optoelectronic sensing structures can now be realized. In this work, we explore the integration of optoelectronic components towards miniature and portable fluorescence sensors. The integration of these micro-fabricated sensors with microfluidics and capillary networks may reduce the cost and complexity of current research instruments and open up a world of new applications in portable biological analysis systems. A novel optoelectronic design that capitalizes on current vertical-cavity surface-emitting laser (VCSEL) technology is explored. Specifically, VCSELs, optical emission filters and PIN photodetectors are fabricated as part of a monolithically integrated near-infrared fluorescence detection system. High-performance lasers and photodetectors have been characterized and integrated to form a complete sensor. Experimental results show that sensor sensitivity is limited by laser background. The laser background is caused by spontaneous emission emitted from the side of the VCSEL excitation source. Laser background will limit sensitivity in most integrated sensing designs due to locating excitation sources and photodetectors in such close proximity, and methods are proposed to reduce the laser background in such designs so that practical fluorescent detection limits can be achieved.

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

NASA Astrophysics Data System (ADS)

Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

2009-02-01

We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

NASA Astrophysics Data System (ADS)

Chuang, Hsueh-Hua

The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total result of the drift current and the diffusion current is less significant than the Ohmic current, especially in the cavity region. This simple iterative model is applied to commercially available oxide-confined VCSELs. The simulation results show excellent agreement with experimentally measured voltage-current curves (within 3.7% for a 10 mum and within 4% for a 5 mum diameter VCSEL) and light-current curves (within 2% for a 10 mum and within 9% for a 5 mum diameter VCSEL) curves and provides insight into the detailed distributions of current and voltage within a VCSEL. This difference between the theoretically calculated results and the measured results is less than the variation shown in the data sheets for production VCSELs.

Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

2016-01-15

In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θ{sub p}. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θ{sub p}. The maximum value of the cross-correlation coefficient achievedmore » is −0.99 with a zero time delay over a wide range of θ{sub p} beyond 65° with a poor synchronization dynamic at θ{sub p} less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θ{sub p}. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.« less

Real-time multi-target ranging based on chaotic polarization laser radars in the drive-response VCSELs.

PubMed

Zhong, Dongzhou; Xu, Geliang; Luo, Wei; Xiao, Zhenzhen

2017-09-04

According to the principle of complete chaos synchronization and the theory of Hilbert phase transformation, we propose a novel real-time multi-target ranging scheme by using chaotic polarization laser radar in the drive-response vertical-cavity surface-emitting lasers (VCSELs). In the scheme, to ensure each polarization component (PC) of the master VCSEL (MVCSEL) to be synchronized steadily with that of the slave VCSEL, the output x-PC and y-PC from the MVCSEL in the drive system and those in the response system are modulated by the linear electro-optic effect simultaneously. Under this condition, by simulating the influences of some key parameters of the system on the synchronization quality and the relative errors of the two-target ranging, related operating parameters can be optimized. The x-PC and the y-PC, as two chaotic radar sources, are used to implement the real-time ranging for two targets. It is found that the measured distances of the two targets at arbitrary position exhibit strong real-time stability and only slight jitter. Their resolutions are up to millimeters, and their relative errors are very small and less than 2.7%.

Fabrication and performance of tuneable single-mode VCSELs emitting in the 750- to 1000-nm range

NASA Astrophysics Data System (ADS)

Grabherr, Martin; Wiedenmann, Dieter; Jaeger, Roland; King, Roger

2005-03-01

The growing demand on low cost high spectral purity laser sources at specific wavelengths for applications like tuneable diode laser absorption spectroscopy (TDLAS) and optical pumping of atomic clocks can be met by sophisticated single-mode VCSELs in the 760 to 980 nm wavelength range. Equipped with micro thermo electrical cooler (TEC) and thermistor inside a small standard TO46 package, the resulting wavelength tuning range is larger than +/- 2.5 nm. U-L-M photonics presents manufacturing aspects, device performance and reliability data on tuneable single-mode VCSELs at 760, 780, 794, 852, and 948 nm lately introduced to the market. According applications are O2 sensing, Rb pumping, Cs pumping, and moisture sensing, respectively. The first part of the paper dealing with manufacturing aspects focuses on control of resonance wavelength during epitaxial growth and process control during selective oxidation for current confinement. Acceptable resonance wavelength tolerance is as small as +/- 1nm and typical aperture size of oxide confined single-mode VCSELs is 3 &mum with only few hundred nm tolerance. Both of these major production steps significantly contribute to yield on wafer values. Key performance data for the presented single-mode VCSELs are: >0.5 mW of optical output power, >30 dB side mode suppression ratio, and extrapolated 10E7 h MTTF at room temperature based on several millions of real test hours. Finally, appropriate fiber coupling solutions will be presented and discussed.

VCSEL proliferation

NASA Astrophysics Data System (ADS)

Tatum, Jim

2007-02-01

Since the commercialization of Vertical Cavity Surface Emitting Lasers (VCSELs) in 1996, Finisar's Advanced Optical Components Division has shipped well over 50 Million VCSELs. The vast majority of these were shipped into the data communications industry, which was essentially the only volume application until 2005. The driver for VCSEL manufacturing might well shift to the increasingly popular laser based optical mouse. The advantages of the laser based mouse over traditional LED mice include operation on a wider range of surfaces, higher resolution, and increased battery lifetime. What is the next application that will drive growth in VCSELs? This paper will offer a historical perspective on the emergence of VCSELs from the laboratory to reality, and the companies that have played key roles in VCSEL commercialization. Furthermore, a perspective on the market needs of future VCSEL development and applications is described.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-08-01

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (Jth) of ˜3.5 kA/cm2, compared to the ITO VCSEL Jth of 8 kA/cm2. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ˜550 μW, compared to ˜80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

Recent Advances of VCSEL Photonics

NASA Astrophysics Data System (ADS)

Koyama, Fumio

2006-12-01

A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features can be expected, such as low-power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years, and they are now key devices in local area networks using multimode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength extension of single-mode VCSELs and their wavelength integration/control. Also, this paper explores the potential and challenges for new functions of VCSELs toward optical signal processing.

Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

NASA Astrophysics Data System (ADS)

Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

2018-03-01

We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

NASA Astrophysics Data System (ADS)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.

2015-08-31

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing inmore » the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.« less

High power VCSEL devices for atomic clock applications

NASA Astrophysics Data System (ADS)

Watkins, L. S.; Ghosh, C.; Seurin, J.-F.; Zhou, D.; Xu, G.; Xu, B.; Miglo, A.

2015-09-01

We are developing VCSEL technology producing >100mW in single frequency at wavelengths 780nm, 795nm and 850nm. Small aperture VCSELs with few mW output have found major applications in atomic clock experiments. Using an external cavity three-mirror configuration we have been able to operate larger aperture VCSELs and obtain >70mW power in single frequency operation. The VCSEL has been mounted in a fiber pigtailed package with the external mirror mounted on a shear piezo. The package incorporates a miniature Rb cell locker to lock the VCSEL wavelength. This VCSEL operates in single frequency and is tuned by a combination of piezo actuator, temperature and current. Mode-hop free tuning over >30GHz frequency span is obtained. The VCSEL has been locked to the Rb D2 line and feedback control used to obtain line-widths of <100kHz.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

VCSEL-based fiber optic link for avionics: implementation and performance analyses

NASA Astrophysics Data System (ADS)

Shi, Jieqin; Zhang, Chunxi; Duan, Jingyuan; Wen, Huaitao

2006-11-01

A Gb/s fiber optic link with built-in test capability (BIT) basing on vertical-cavity surface-emitting laser (VCSEL) sources for military avionics bus for next generation has been presented in this paper. To accurately predict link performance, statistical methods and Bit Error Rate (BER) measurements have been examined. The results show that the 1Gb/s fiber optic link meets the BER requirement and values for link margin can reach up to 13dB. Analysis shows that the suggested photonic network may provide high performance and low cost interconnections alternative for future military avionics.

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

Time-delay signature of chaos in 1550 nm VCSELs with variable-polarization FBG feedback.

PubMed

Li, Yan; Wu, Zheng-Mao; Zhong, Zhu-Qiang; Yang, Xian-Jie; Mao, Song; Xia, Guang-Qiong

2014-08-11

Based on the framework of spin-flip model (SFM), the output characteristics of a 1550 nm vertical-cavity surface-emitting laser (VCSEL) subject to variable-polarization fiber Bragg grating (FBG) feedback (VPFBGF) have been investigated. With the aid of the self-correlation function (SF) and the permutation entropy (PE) function, the time-delay signature (TDS) of chaos in the VPFBGF-VCSEL is evaluated, and then the influences of the operation parameters on the TDS of chaos are analyzed. The results show that the TDS of chaos can be suppressed efficiently through selecting suitable coupling coefficient and feedback rate of the FBG, and is weaker than that of chaos generated by traditional variable-polarization mirror feedback VCSELs (VPMF-VCSELs) or polarization-preserved FBG feedback VCSELs (PPFBGF-VCSELs).

High-power VCSEL systems and applications

NASA Astrophysics Data System (ADS)

Moench, Holger; Conrads, Ralf; Deppe, Carsten; Derra, Guenther; Gronenborn, Stephan; Gu, Xi; Heusler, Gero; Kolb, Johanna; Miller, Michael; Pekarski, Pavel; Pollmann-Retsch, Jens; Pruijmboom, Armand; Weichmann, Ulrich

2015-03-01

Easy system design, compactness and a uniform power distribution define the basic advantages of high power VCSEL systems. Full addressability in space and time add new dimensions for optimization and enable "digital photonic production". Many thermal processes benefit from the improved control i.e. heat is applied exactly where and when it is needed. The compact VCSEL systems can be integrated into most manufacturing equipment, replacing batch processes using large furnaces and reducing energy consumption. This paper will present how recent technological development of high power VCSEL systems will extend efficiency and flexibility of thermal processes and replace not only laser systems, lamps and furnaces but enable new ways of production. High power VCSEL systems are made from many VCSEL chips, each comprising thousands of low power VCSELs. Systems scalable in power from watts to multiple ten kilowatts and with various form factors utilize a common modular building block concept. Designs for reliable high power VCSEL arrays and systems can be developed and tested on each building block level and benefit from the low power density and excellent reliability of the VCSELs. Furthermore advanced assembly concepts aim to reduce the number of individual processes and components and make the whole system even more simple and reliable.

Experimental Investigation and Computer Modeling of Optical Switching in Distributed Bragg Reflector and Vertical Cavity Surface Emitting Laser Structures.

DTIC Science & Technology

1995-12-01

of a Molecular Beam Epitaxy (MBE) system prior to growing a Vertical Cavity Surface Emitting Laser ( VCSEL ). VCSEL bistability is discussed later in...addition, optical bistability 1 in the reflectivity of a DBR, as well as in the lasing power, wavelength, and beam divergence of a lasing VCSEL are...Spectral Reflectivity of AlGaAs/AlAs VCSEL Top DBR Mirror Cavity Bottom DBR Mirror Substrate Output Beam Resonance Pump Minimum Stop Band Figure 2. VCSEL

Final report on LDRD project : narrow-linewidth VCSELs for atomic microsystems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng Wah; Geib, Kent Martin; Peake, Gregory Merwin

2011-09-01

Vertical-cavity surface-emitting lasers (VCSELs) are well suited for emerging photonic microsystems due to their low power consumption, ease of integration with other optical components, and single frequency operation. However, the typical VCSEL linewidth of 100 MHz is approximately ten times wider than the natural linewidth of atoms used in atomic beam clocks and trapped atom research, which degrades or completely destroys performance in those systems. This report documents our efforts to reduce VCSEL linewidths below 10 MHz to meet the needs of advanced sub-Doppler atomic microsystems, such as cold-atom traps. We have investigated two complementary approaches to reduce VCSEL linewidth:more » (A) increasing the laser-cavity quality factor, and (B) decreasing the linewidth enhancement factor (alpha) of the optical gain medium. We have developed two new VCSEL devices that achieved increased cavity quality factors: (1) all-semiconductor extended-cavity VCSELs, and (2) micro-external-cavity surface-emitting lasers (MECSELs). These new VCSEL devices have demonstrated linewidths below 10 MHz, and linewidths below 1 MHz seem feasible with further optimization.« less

Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

NASA Astrophysics Data System (ADS)

Parekh, Devang

With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance frequency enhancement was exploited for millimeter-wave radio over fiber communications. Experimental demonstration of 4 Gb/s data transmission over 20 km of fiber and 3 m of wireless transmission at a 60 GHz carrier frequency was achieved. Additionally, optical injection of multi-transverse mode (MM) VCSELs was investigated showing record resonance frequency enhancement of > 54 GHz and 3-dB bandwidth of 38 GHz. Besides these applications, a number of other intriguing applications are also discussed, including an optoelectronic oscillator (OEO) and wavelength-division multiplexed passive optical networks (WDM-PON). Finally, the future of optical injection locking and its direction going forward will be discussed.

Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario.

PubMed

Boletti, A; Boffi, P; Martelli, P; Ferrario, M; Martinelli, M

2015-01-26

To face the increased demand for bandwidth, cost-effectiveness and simplicity of future Ethernet data communications, a comparison between two different solutions based on directly-modulated VCSEL sources and Silicon Photonics technologies is carried out. Also by exploiting 4-PAM modulation, the transmission of 50-Gb/s and beyond capacity per channel is analyzed by means of BER performance. Applications for optical backplane, very short reach and in case of client-optics networks and intra and inter massive data centers communications (up to 10 km) are taken into account. A comparative analysis based on the power consumption is also proposed.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, C.; Margalith, T.; Ng, T. K.; DenBaars, S. P.; Ooi, B. S.; Speck, J. S.; Nakamura, S.

2016-02-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 μm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 μW with a threshold current density of ~3.5 kA/cm2, while the ITO VCSELs show peak powers of ~80 μW and threshold current densities of ~7 kA/cm2.

Semiconductor Laser Joint Study Program with Rome Laboratory

DTIC Science & Technology

1994-09-01

VCSELs 3.3 Laser Wafer Growth by Molecular Beam Epitaxy 8 The VCSEL structures were grown by molecular beam ...cavity surface emittimg lasers ( VCSEL ), Optical 40 interconnects, Moelcular beam epitaxy It CECOOE 17. SECURfTY CLASWICATION SECURFlY CLASSIFICATION 1 Q...7 3.3 Laser Wafer Growth by Molecular Beam Epitax. ............ 8 3.4 VCSEL Fabrication Process ................................................

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Multi-scale reflection modulator-based optical interconnects

NASA Astrophysics Data System (ADS)

Nair, Rohit

This dissertation describes the design, analysis, and experimental validation of micro- and macro-optical components for implementing optical interconnects at multiple scales for varied applications. Three distance scales are explored: millimeter, centimeter, and meter-scales. At the millimeter-scale, we propose the use of optical interconnects at the intra-chip level. With the rapid scaling down of CMOS critical dimensions in accordance to Moore's law, the bandwidth requirements of global interconnects in microprocessors has exceeded the capabilities of metal links. These are the wires that connect the most remote parts of the chip and are disproportionately problematic in terms of chip area and power consumption. Consequently, in the mid-2000s, we saw a shift in the chip architecture: a move towards multicore designs. However, this only delays the inevitable communication bottleneck between cores. To satisfy this bandwidth, we propose to replace the global metal interconnects with optical interconnects. We propose to use the hybrid integration of silicon with GaAs/AlAs-based multiple quantum well devices as optical modulators and photodetectors along with polymeric waveguides to transport the light. We use grayscale lithography to fabricate curved facets into the waveguides to couple light into the modulators and photodetectors. Next, at the chip-to-chip level in high-performance multiprocessor computing systems, communication distances vary from a few centimeters to tens of centimeters. An optical design for coupling light from off-chip lasers to on-chip surface-normal modulators is proposed in order to implement chip-to-chip free-space optical interconnects. The method uses a dual-prism module constructed from prisms made of two different glasses. The various alignment tolerances of the proposed system are investigated and found to be well within pick-and-place accuracies. For the off-chip lasers, vertical cavity surface emitting lasers (VCSELs) are proposed. The rationale behind using on-chip modulators rather than VCSELs is to avoid VCSEL thermal loads on chip, and because of higher reliability of modulators than VCSELs. Particularly above 10Gbps, an empirical model developed shows the rapid decrease of VCSEL median time to failure vs. data rate. Thus the proposed interconnect scheme which utilizes continuous wave VCSELs that are externally modulated by on-chip multiple quantum well modulators is applicable for chip-to-chip optical interconnects at 20Gbps and higher line data rates. Finally, for applications such as remote telemetry, where the interrogation distances can vary from a few meters to tens or even hundreds of meters we demonstrate a modulated retroreflector that utilizes InGaAs/InAlAs-based large-area multiple quantum well modulators on all three faces of a retroreflector. The large-area devices, fabricated by metalorganic chemical vapor deposition, are characterized in terms of the yield and leakage currents. A yield higher than that achieved previously using devices fabricated by molecular beam epitaxy is observed. The retroreflector module is constructed using standard FR4 printed circuit boards, thereby simplifying the wiring issue. A high optical contrast ratio of 8.23dB is observed for a drive of 20V. A free-standing PCB retroreflector is explored and found to have insufficient angular tolerances (+/-0.5 degrees). We show that the angular errors in the corner-cube construction can be corrected for using off-the-shelf optical components as opposed to mounting the PCBs on a precision corner cube, as has been done previously.

New VCSEL technology with scalability for single mode operation and densely integrated arrays

NASA Astrophysics Data System (ADS)

Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

2011-06-01

Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

Long-distance multi-channel bidirectional chaos communication based on synchronized VCSELs subject to chaotic signal injection

NASA Astrophysics Data System (ADS)

Xie, Yi-Yuan; Li, Jia-Chao; He, Chao; Zhang, Zhen-Dong; Song, Ting-Ting; Xu, Chang-Jun; Wang, Gui-Jin

2016-10-01

A novel long-distance multi-channel bidirectional chaos communication system over multiple paths based on two synchronized 1550 nm vertical-cavity surface-emitting lasers (VCSELs) is proposed and studied theoretically. These two responding VCSELs (R-VCSELs) can output similar chaotic signals served as chaotic carrier in two linear polarization (LP) modes with identical signal injection from a driving VCSEL (D-VCSEL), which is subject to optical feedback and optical injection, simultaneously. Through the numerical simulations, high quality chaos synchronization between the two R-VCSELs can be obtained. Besides, the effects of varied qualities of chaos synchronization on communication performances in 20 km single mode fiber (SMF) channels are investigated by regulating different internal parameters mismatch after adopting chaos masking (CMS) technique. With the decrease of the maximum cross correlation coefficient (Max-C) between the two R-VCSELs, the bit error rate (BER) of decoded message increase. Meanwhile, the BER can still be less than 10-9 when the Max-C degrades to 0.982. Based on high quality synchronization, when the dispersion compensating fiber (DCF) links are introduced, 4n messages of 10 Gbit/s can transmit in 180 km SMF channels over n coupling paths, bidirectionally and simultaneously. Thorough tests are carried out with detailed analysis, demonstrating long-distance, multi-channel, bidirectional chaos communication based on VCSELs with chaotic signal injection.

Electro-thermo-optical simulation of vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Smagley, Vladimir Anatolievich

Three-dimensional electro-thermal simulator based on the double-layer approximation for the active region was coupled to optical gain and optical field numerical simulators to provide a self-consistent steady-state solution of VCSEL current-voltage and current-output power characteristics. Methodology of VCSEL modeling had been established and applied to model a standard 850-nm VCSEL based on GaAs-active region and a novel intracavity-contacted 400-nm GaN-based VCSEL. Results of GaAs VCSEL simulation were in a good agreement with experiment. Correlations between current injection and radiative mode profiles have been observed. Physical sub-models of transport, optical gain and cavity optical field were developed. Carrier transport through DBRs was studied. Problem of optical fields in VCSEL cavity was treated numerically by the effective frequency method. All the sub-models were connected through spatially inhomogeneous rate equation system. It was shown that the conventional uncoupled analysis of every separate physical phenomenon would be insufficient to describe VCSEL operation.

Demonstration of Raman-based, dispersion-managed VCSEL technology for fibre-to-the-hut application

NASA Astrophysics Data System (ADS)

Rotich Kipnoo, E. K.; Kiboi Boiyo, D.; Isoe, G. M.; Chabata, T. V.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-03-01

For the first time, we experimentally investigate the use of vertical cavity surface emitting lasers (VCSELs) in the fibre-to-the-home (FTTH) flavour for Africa, known as fibre-to-the-hut. Fibre-to-the-hut is a VCSEL based passive optical network technology designed and optimized for African continent. VCSELs have attracted attention in optical communication due to its vast advantages; low power consumption, relatively cheap costs among others. A 4.25 Gb/s uncooled VCSEL is used in a dispersion managed, Raman assisted network achieving beyond 100 km of error free transmission suited for FTTHut scenario. Energy-efficient high performance VCSEL is modulated using a 27-1 PRBS pattern and the signal transmitted on a G.655 fibre utilizing the minimum attenuation window.

Vertical-cavity surface-emitting lasers: present and future

NASA Astrophysics Data System (ADS)

Morgan, Robert A.

1997-04-01

This manuscript reviews the present status of 'commercial- grade,' state-of-the-art planar, batch-fabricable, vertical- cavity surface-emitting lasers (VCSELs). Commercial-grade performance on all fronts for high-speed data communications is clearly established. In discussing the 'present,' we focus on the entrenched proton-implanted AlGaAs-based (emitting near 850 nm) technology. Renditions of this VCSEL design exist in commercial products and have enabled numerous application demonstrations. Our designs more than adequately meet producibility, performance, and robustness stipulations. Producibility milestones include greater than 99% device yield across 3-in-dia metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across greater than 100-nm range. Progress in performance includes the elimination of the excessive voltage-drop that plagued VCSELs as recently as 2 to 3 years ago. Threshold voltages as low as Vth equals 1.53 V (and routinely less than 1.6 V) are now commonplace. Submilliamp threshold currents (Ith equals 0.68 mA) have even been demonstrated with this planar structure. Moreover, continuous wave (cw) power Pcw greater than 59 mW and respectable wall-plug efficiencies ((eta) wp equals 28%) have been demonstrated. VCSEL robustness is evidenced by maximum cw lasing temperature T equals 200 degrees Celsius and temperature ranges of 10 K to 400 K and minus 55 degrees Celsius to 155 degrees Celsius on a single VCSEL. These characteristics should enable great advances in VCSEL-based technologies and beckon the notion that 'commercial-grade' VCSELs are viable in cryogenic and avionics/military environments. We also discuss what the future may hold in extensions of this platform to different wavelengths, increased integration, and advanced structures. This includes low-threshold, high- speed, single-mode VCSELs, hybrid VCSEL transceivers, and self-pulsating VCSELs.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology.

PubMed

Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J S; Kraus, Martin F; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E; Fujimoto, James G

2013-07-01

We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated.

Ultrahigh speed endoscopic optical coherence tomography using micromotor imaging catheter and VCSEL technology

PubMed Central

Tsai, Tsung-Han; Potsaid, Benjamin; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Jiang, James; Heim, Peter J. S.; Kraus, Martin F.; Zhou, Chao; Hornegger, Joachim; Mashimo, Hiroshi; Cable, Alex E.; Fujimoto, James G.

2013-01-01

We developed a micromotor based miniature catheter with an outer diameter of 3.2 mm for ultrahigh speed endoscopic swept source optical coherence tomography (OCT) using a vertical cavity surface-emitting laser (VCSEL) at a 1 MHz axial scan rate. The micromotor can rotate a micro-prism at several hundred frames per second with less than 5 V drive voltage to provide fast and stable scanning, which is not sensitive to the bending of the catheter. The side-viewing probe can be pulled back to acquire a three-dimensional (3D) data set covering a large area on the specimen. The VCSEL provides a high axial scan rate to support dense sampling under high frame rate operation. Using a high speed data acquisition system, in vivo 3D-OCT imaging in the rabbit GI tract and ex vivo imaging of a human colon specimen with 8 μm axial resolution, 8 μm lateral resolution and 1.2 mm depth range in tissue at a frame rate of 400 fps was demonstrated. PMID:23847737

Phase noise analysis of a 10-GHz optical injection-locked vertical-cavity surface-emitting laser-based optoelectronic oscillator

NASA Astrophysics Data System (ADS)

Coronel, Juan; Varón, Margarita; Rissons, Angélique

2016-09-01

The optical injection locking (OIL) technique is proposed to reduce the phase noise of a carrier generated for a vertical-cavity surface-emitting laser (VCSEL)-based optoelectronic oscillator. The OIL technique permits the enhancement of the VCSEL direct modulation bandwidth as well as the stabilization of the optical noise of the laser. A 2-km delay line, 10-GHz optical injection-locked VCSEL-based optoelectronic oscillator (OILVBO) was implemented. The internal noise sources of the optoelectronic oscillator components were characterized and analyzed to understand the noise conversion of the system into phase noise in the oscillator carrier. The implemented OILVBO phase noise was -105.7 dBc/Hz at 10 kHz from the carrier; this value agrees well with the performed simulated analysis. From the computed and measured phase noise curves, it is possible to infer the noise processes that take place inside the OILVBO. As a second measurement of the oscillation quality, a time-domain analysis was done through the Allan's standard deviation measurement, reported for first time for an optoelectronic oscillator using the OIL technique.

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1994-04-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. In this program, we concentrated on novel epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays.

Close to 100 Gbps discrete multitone transmission over 100m of multimode fiber using a single transverse mode 850nm VCSEL

NASA Astrophysics Data System (ADS)

Wu, Bo; Zhou, Xian; Ma, Yanan; Luo, Jun; Zhong, Kangping; Qiu, Shaofeng; Feng, Zhiyong; Luo, Yazhi; Agustin, Mikel; Ledentsov, Nikolay; Kropp, Joerg; Shchukin, Vitaly; Ledentsov, Nikolay N.; Eddie, Iain; Chao, Lu

2016-03-01

Discrete Multitone Transmission (DMT) transmission over standard multimode fiber (MMF) using high-speed single (SM) and multimode (MM) Vertical-Cavity Surface-Emitting Lasers (VCSELs) is studied. Transmission speed in the range of 72Gbps to 82Gbps over 300m -100m distances of OM4 fiber is realized, respectively, at Bit-Error-Ratio (BER) <5e-3 and the received optical power of only -5dBm. Such BER condition requires only 7% overhead for the conversion to error-free operation using single Bose-Chaudhuri-Hocquenghem forward error correction (BCH-FEC) coding and decoding. SM VCSEL is demonstrated to provide a much higher data transmission capacity over MMF. For 100m MMF transmission SM VCSEL allows 82Gbps as compared to MM VCSEL resulting in only 34Gbps at the same power (-5dBm). Furthermore, MM VCSEL link at 0dBm is still restricted at 100m distance by 63Gbps while SM VCSEL can exceed 100Gbps at such power levels. We believe that with further improvement in SM VCSELs and fiber coupling >100Gbps data transmission over >300m MMF distances at the BER levels matching the industry standards will become possible.

Ultrafast FADC multiplexer

NASA Astrophysics Data System (ADS)

Mirzoyan, R.; Cortina, J.; Lorenz, E.; Martinez, M.; Ostankov, A.; Paneque, D.

2002-10-01

Ultrafast Flash amplitude-to-digital converters (FADCs) are still very expensive. Here we propose a multiplexing scheme allowing one in common trigger mode to read out multiple signal sources by using a single FADC channel. Usual coaxial cables can be used in the multiplexer as analog signal delay elements. The limited bandwidth of the coaxial cable, depending on its type and length will set an upper limit to the number of multiplexed channels. Better bandwidth and the correspondingly higher number of multiplexed channels one can obtain when using the technique of transmission of analog signals via optical fibers. Low-cost vertical cavity surface emitting laser (VCSEL) diodes can be used as converters of fast electrical signals into near infrared light. Multiplexing can be an economically priced solution when one needs ultrafast digitization of hundreds of fast signal channels.

Electrical birefringence tuning of VCSELs

NASA Astrophysics Data System (ADS)

Pusch, Tobias; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.; Michalzik, Rainer

2018-02-01

The birefringence splitting B, which is the frequency difference between the two fundamental linear polarization modes in vertical-cavity surface-emitting lasers (VCSELs), is the key parameter determining the polarization dynamics of spin-VCSELs that can be much faster than the intensity dynamics. For easy handling and control, electrical tuning of B is favored. This was realized in an integrated chip by thermally induced strain via asymmetric heating with a birefringence tuning range of 45 GHz. In this paper we present our work on VCSEL structures mounted on piezoelectric transducers for strain generation. Furthermore we show a combination of both techniques, namely VCSELs with piezo-thermal birefringence tunability.

Laser optomechanics

NASA Astrophysics Data System (ADS)

Yang, Weijian; Adair Gerke, Stephen; Wei Ng, Kar; Rao, Yi; Chase, Christopher; Chang-Hasnain, Connie J.

2015-09-01

Cavity optomechanics explores the interaction between optical field and mechanical motion. So far, this interaction has relied on the detuning between a passive optical resonator and an external pump laser. Here, we report a new scheme with mutual coupling between a mechanical oscillator supporting the mirror of a laser and the optical field generated by the laser itself. The optically active cavity greatly enhances the light-matter energy transfer. In this work, we use an electrically-pumped vertical-cavity surface-emitting laser (VCSEL) with an ultra-light-weight (130 pg) high-contrast-grating (HCG) mirror, whose reflectivity spectrum is designed to facilitate strong optomechanical coupling, to demonstrate optomechanically-induced regenerative oscillation of the laser optomechanical cavity. We observe >550 nm self-oscillation amplitude of the micromechanical oscillator, two to three orders of magnitude larger than typical, and correspondingly a 23 nm laser wavelength sweep. In addition to its immediate applications as a high-speed wavelength-swept source, this scheme also offers a new approach for integrated on-chip sensors.

Temperature stable oxide-confined 850-nm VCSELs operating at bit rates up to 25 Gbit/s at 150°C

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Agustin, M.; Kropp, J.-R.; Shchukin, V. A.; Kalosha, V. P.; Chi, K. L.; Khan, Z.; Shi, J. W.; Ledentsov, N. N.

2018-02-01

New applications in industrial, automotive and datacom applications require vertical-cavity surface-emitting lasers (VCSELs) operating at very high ambient temperatures at ultrahigh speed. We discuss issues related to high temperature performance of the VCSELs including temperature response and spectral properties. The influence of the gain-to-cavity wavelength detuning on temperature performance and spectral width of the VCSELs is discussed. Performance of the oxide-confined 850 nm VCSELs with increased temperature stability capable of operating at bit rates up to 25 Gbit/s at heat sink temperature of 150°C and 35Gbit/s at 130°C. Furthermore, opposite to previous studies of VCSELs with large gain-to-cavity detuning, which demonstrated strongly increased spectral width and a strong redistribution of the mode intensities upon current increase. VCSELs demonstrated in this work show good reproducibility of a narrow spectrum in a wide range of currents and temperatures. Such performance strongly improves the transmission distance over multi-mode fiber and can reduce mode partition noise during high speed operation.

Optical link by using optical wiring method for reducing EMI

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Kwon, Jong-Hwa; Choi, Sung-Woong; Bondarik, Alexander; Yun, Je-Hoon; Kim, Chang-Joo; Ahn, Seung-Beom; Jeong, Myung-Yung; Park, Hyo Hoon

2008-12-01

A practical optical link system was prepared with a transmitter (Tx) and receiver (Rx) for reducing EMI (electromagnetic interference). The optical TRx module consisted of a metal optical bench, a module printed circuit board (PCB), a driver/receiver IC, a VCSEL/PD array, and an optical link block composed of plastic optical fiber (POF). For the optical interconnection between the light-sources and detectors, an optical wiring method has been proposed to enable easy assembly. The key benefit of fiber optic link is the absence of electromagnetic interference (EMI) noise creation and susceptibility. This paper provides a method for optical interconnection between an optical Tx and an optical Rx, comprising the following steps: (i) forming a light source device, an optical detection device, and an optical transmission unit on a substrate (metal optical bench (MOB)); (ii) preparing a flexible optical transmission-connection medium (optical wiring link) to optically connect the light source device formed on the substrate with the optical detection device; and (iii) directly connecting one end of the surface-finished optical transmission connection medium with the light source device and the other end with the optical detection device. Electronic interconnections have uniquely electronic problems such as EMI, shorting, and ground loops. Since these problems only arise during transduction (electronics-to-optics or opticsto- electronics), the purely optical part and optical link(interconnection) is free of these problems. 1 An optical link system constructed with TRx modules was fabricated and the optical characteristics about data links and EMI levels were measured. The results clearly demonstrate that the use of an optical wiring method can provide robust and cost-effective assembly for reducing EMI of inter-chip interconnect. We successfully achieved a 4.5 Gb/s data transmission rate without EMI problems.

VCSEL Applications and Simulation

NASA Technical Reports Server (NTRS)

Cheung, Samson; Goorjian, Peter; Ning, Cun-Zheng; Li, Jian-Zhong

2000-01-01

This viewgraph presentation gives an overview of Vertical Cavity Surface Emitting Laser (VCSEL) simulation and its applications. Details are given on the optical interconnection in information technology of VCSEL, the formulation of the simulation, its numeric algorithm, and the computational results.

MBE growth of VCSELs for high volume applications

NASA Astrophysics Data System (ADS)

Jäger, Roland; Riedl, Michael C.

2011-05-01

Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

A plot twist: the continuing story of VCSELs at AOC

NASA Astrophysics Data System (ADS)

Guenter, James K.; Tatum, Jim A.; Hawthorne, Robert A., III; Johnson, Ralph H.; Mathes, David T.; Hawkins, Bobby M.

2005-03-01

During a year of substantial consolidation in the VCSEL industry, Honeywell sold their VCSEL Optical Products Division, which has now officially changed its name to Advanced Optical Components (AOC). Both manufacture and applied research continue, however. Some of the developments of the past year are discussed in this paper. They include advances in the understanding of VCSEL degradation physics, substantial improvements in long-wavelength VCSEL performance, and continuing progress in manufacturing technology. In addition, higher speed serial communications products, at 10 gigabits and particularly at 4 gigabits per second, have shown faster than predicted growth. We place these technologies and AOC's approach to them in a market perspective, along with other emerging applications.

Reliability and degradation of oxide VCSELs due to reaction to atmospheric water vapor

NASA Astrophysics Data System (ADS)

Dafinca, Alexandru; Weidberg, Anthony R.; McMahon, Steven J.; Grillo, Alexander A.; Farthouat, Philippe; Ziolkowski, Michael; Herrick, Robert W.

2013-03-01

850nm oxide-aperture VCSELs are susceptible to premature failure if operated while exposed to atmospheric water vapor, and not protected by hermetic packaging. The ATLAS detector in CERN's Large Hadron Collider (LHC) has had approximately 6000 channels of Parallel Optic VCSELs fielded under well-documented ambient conditions. Exact time-to-failure data has been collected on this large sample, providing for the first time actual failure data at use conditions. In addition, the same VCSELs were tested under a variety of accelerated conditions to allow us to construct a more accurate acceleration model. Failure analysis information will also be presented to show what we believe causes corrosion-related failure for such VCSELs.

Progress and prospects of GaN-based VCSEL from near UV to green emission

NASA Astrophysics Data System (ADS)

Yu, Hsin-chieh; Zheng, Zhi-wei; Mei, Yang; Xu, Rong-bin; Liu, Jian-ping; Yang, Hui; Zhang, Bao-ping; Lu, Tien-chang; Kuo, Hao-chung

2018-01-01

GaN is a great material for making optoelectronic devices in the blue, blue-violet and green bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including small footprint, circular symmetry of output beam, two-dimensional scalability and/or addressability, surface-mount packaging, good price-performance ratio, and simple optics/alignment for output coupling. In this paper, we would like to (1) Review the design and fabrication of GaN-based VCSELs including some technology challenges, (2) Discuss the design and metalorganic chemical vapor deposition (MOCVD) growth of electrically pumped blue VCSELs and (3) Demonstrate world first green VCSEL using quantum dots (QDs) active region to overcome the 'green gap'.

Studying the VCSEL to VCSEL injection locking for enhanced chromatic dispersion compensation

NASA Astrophysics Data System (ADS)

Li, Linfu

2010-11-01

In order to supply a theoretical guide for digital chaotic telecommunication, the technique of Optical injection locking (OIL) of semiconductor lasers on the chaotic communication have been investigated based on the theoretical models used to describe the dynamics of solitary VCSEL subjected to the external optical injection and signal transmission in fiber. The numerical simulation results show that, the frequency chirp and time-resolved chirp are reduced in magnitude, using a VCSEL laser as master and another VCSEL as slave, it leads to a no-penalty transmission over 50 km of uncompensated in SSMF at 10Gb/s, and it could be higher rate and more remote if there were appropriate compensation.

50Gb/s PAM-4 oxide VCSEL development progress at Broadcom

NASA Astrophysics Data System (ADS)

Wang, Jingyi; Murty, M. V. Ramana; Wang, Charlie; Hui, David; Lehman Harren, Ann; Chang, Hsu-Hao; Feng, Zheng-Wen; Fanning, Thomas R.; Sridhara, Aaditya; Taslim, Sumitro-Joyo; Cai, Xinle; Chu, Jason; Giovane, Laura M.

2017-02-01

This paper will review the device design and performance of Broadcom's 50Gb/s PAM-4 VCSEL to enable the next generation of transceivers using a PAM-4 advanced modulation scheme at 25-28 GBd. The VCSEL has been optimized to minimize noise and improve dynamic performance for cleaner eyes. Preliminary wear out lifetime studies indicate that the time to 1% failure exceeds 10 years, making the VCSELs suitable for data communication applications.

Design and Characterization of Optically Pumped Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1992-12-01

technology to make VCSELs (e.g. Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD)) motivated the research in this area over the...Resistances for Current Injected VCSELs 3-14 4.1. Equipment Configuration used for Output Beam Characterization . . . 4-1 4.2. Optical Pump Beam and Focusing...pursued over the past few years because VCSELs have ad- ditional inherent advantages. The VCSEL design exhibits better exit beam quality, is of smaller

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-06-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

2018-03-01

A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

Multiple-wavelength vertical cavity laser arrays with wide wavelength span and high uniformity

NASA Astrophysics Data System (ADS)

Yuen, Wupen; Li, Gabriel S.; Chang-Hasnain, Connie J.

1996-12-01

Vertical-cavity surface-emitting lasers (VCSELs) are promising for numerous applications. In particular, due to their inherent single Fabry-Perot mode operation, VCSELs can be very useful for wavelength division multiplexing (WDM) systems allowing high bandwidth and high functionalities.1, 2 Multiple wavelength VCSEL arrays with wide channel spacings (>10 nm) provide an inexpensive solution to increasing the capacity of local area networks without using active wavelength controls.1 The lasing wavelength of a VCSEL is determined by the equivalent laser cavity thickness which can be varied by changing the thickness of either the l-spacer or the distributed Bragg reflector (DBR) layers. To make monolithic multiple-wavelength VCSEL arrays, the lasing wavelength, and therefore the cavity thickness, has to be varied at reasonable physical distances. For all practical applications, it is imperative for the fabrication technology to be controllable, cost-effective, and wafer-scale. Recently, we demonstrated a patterned-substrate molecular beam epitaxy (MBE) growth technique with in-situ laser reflectometry monitoring for fabricating multiple wavelength VCSEL arrays.3, 4 With this method, VCSEL arrays with very large and highly controllable lasing wavelength spans and excellent lasing characteristics have been achieved.

Heterogeneously-integrated VCSEL using high-contrast grating on silicon

NASA Astrophysics Data System (ADS)

Ferrara, James; Zhu, Li; Yang, Weijian; Qiao, Pengfei; Chang-Hasnain, Connie J.

2015-02-01

We present a unique heterogeneous integration approach for VCSELs on silicon using eutectic bonding. An electrically pumped III-V - silicon heterogeneous VCSEL is demonstrated using a high-contrast grating (HCG) reflector on silicon. CW output power >1.5 mW, thermal resistance of 1.46 K/mW, and 5 Gb/s direct modulation is demonstrated. We also explore the possibility of an all-HCG VCSEL structure that would benefit from stronger thermal performance, larger tuning efficiency, and higher direct modulation speeds.

1310nm VCSELs in 1-10Gb/s commercial applications

NASA Astrophysics Data System (ADS)

Jewell, Jack; Graham, Luke; Crom, Max; Maranowski, Kevin; Smith, Joseph; Fanning, Tom

2006-02-01

Beginning with 4 Gigabit/sec Fibre-Channel, 1310nm vertical-cavity surface-emitting lasers (VCSELs) are now entering the marketplace. Such VCSELs perform like distributed feedback lasers but have drive currents and heat dissipation like 850nm VCSELs, making them ideal for today's high-performance interconnects and the only choice for the next step in increased interconnection density. Transceiver performances at 4 and 10 Gigabits/sec over fiber lengths 10-40km are presented. The active material is extremely robust, resulting in excellent reliability.

GHz Modulation of GaAs-Based Bipolar Cascade VCSELs (Preprint)

DTIC Science & Technology

2006-11-01

VCSELs were grown on n+ GaAs substrates by molecular beam epitaxy . The laser cavities consist of 1-, 2-, or 3-stage 52λ microcavi- ties, each containing...AFRL-SN-WP-TP-2006-128 GHz MODULATION OF GaAs-BASED BIPOLAR CASCADE VCSELs (PREPRINT) W.J. Siskaninetz, R.G. Bedford, T.R. Nelson, Jr., J.E...TITLE AND SUBTITLE GHz MODULATION OF GaAs-BASED BIPOLAR CASCADE VCSELs (PREPRINT) 5c. PROGRAM ELEMENT NUMBER 69199F 5d. PROJECT NUMBER 2002 5e

Modal loss mechanism of micro-structured VCSELs studied using full vector FDTD method.

PubMed

Jo, Du-Ho; Vu, Ngoc Hai; Kim, Jin-Tae; Hwang, In-Kag

2011-09-12

Modal properties of vertical cavity surface-emitting lasers (VCSELs) with holey structures are studied using a finite difference time domain (FDTD) method. We investigate loss behavior with respect to the variation of structural parameters, and explain the loss mechanism of VCSELs. We also propose an effective method to estimate the modal loss based on mode profiles obtained using FDTD simulation. Our results could provide an important guideline for optimization of the microstructures of high-power single-mode VCSELs.

VCSELs for optical communication at Fuji Xerox

NASA Astrophysics Data System (ADS)

Kondo, Takashi; Hayakawa, Junichiro; Jogan, Naoki; Murakami, Akemi; Sakurai, Jun; Gu, Xiaodong; Koyama, Fumio

2017-02-01

We introduce the characteristics of vertical-cavity surface-emitting lasers (VCSELs) for use in optical communications. In the field of optical interconnections and networks, 850 nm VCSELs are key optical transmitters due to their high-speed modulation and low power consumption. One promising candidate for achieving high-speed modulations exceeding 50 Gbps is the transverse-coupled-cavity (TCC) VCSEL. In this talk, we demonstrate the characteristics of 850 nm transverse-coupled-cavity VCSELs, which helped us achieve a high 3dB modulation bandwidth (30 GHz) at 0 °C and realize eye-opening at the large-signal modulation rate of 48 Gbps. The VCSEL's epilayer structure was grown by MOCVD. The active region consists of three strained InGaAs QWs surrounded by AlGaAs barriers. The n-type and p-type DBRs are composed of AlGaAs/AlGaAs, respectively. A line-shaped H+ ion was implanted at the center of the bowtie-shaped post, dividing it into two cavities. The threshold current of the TCC VCSEL with an oxide aperture of 3.6 μm is 0.33 mA. Only the left-side cavity is pumped, while the right cavity is unpumped. The effect of modulation bandwidth enhancement was observed over a wide temperature range of 120K thanks to an optical feedback in the coupled cavities. These results show the possibility of achieving high-speed VCSELs without any temperature or bias control. We also demonstrate an ultra-compact photodetector-integrated VCSEL with two laterally-coupled cavities. An output power and a photocurrent exhibit similar tendencies under a wide range of temperature changes. This device could be also used for monitoring output power without a conventional photodetector mounted separately.

Calibration and Field Deployment of the NSF G-V VCSEL Hygrometer

NASA Astrophysics Data System (ADS)

DiGangi, J. P.; O'Brien, A.; Diao, M.; Hamm, C.; Zhang, Q.; Beaton, S. P.; Zondlo, M. A.

2012-12-01

Cloud formation and dynamics have a significant influence on the Earth's radiative forcing budget, which illustrates the importance of clouds with respect to global climate. Therefore, an accurate understanding of the microscale processes dictating cloud formation is crucial for accurate computer modeling of global climate change. A critical tool for understanding these processes from an airborne platform is an instrument capable of measuring water vapor with both high accuracy and time, thus spatial, resolution. Our work focuses on an open-path, compact, vertical-cavity surface-emitting laser (VCSEL) absorption-based hygrometer, capable of 25 Hz temporal resolution, deployed on the NSF/NCAR Gulfstream-V aircraft platform. The open path nature of our instrument also helps to minimize sampling artifacts. We will discuss our efforts toward achieving within 5% accuracy over 5 orders of magnitude of water vapor concentrations. This involves an intercomparison of five independent calibration methods: ice surface saturators using an oil temperature bath, solvent slush baths (e.g. chloroform/LN2, water/ice), a research-grade frost point hygrometer, static pressure experiments, and Pt catalyzed hydrogen gas. This wide variety of available tools allows us to accurately constrain the calibrant water vapor concentrations both before and after the VCSEL hygrometer sampling chamber. For example, the mixing ratio as measured by research-grade frost point hygrometer after the VCSEL hygrometer agreed within 2% of the mixing ration expected from the water/ice bubbler source before the VCSEL over the temperature range -50°C to 20°C. Finally, due to the compact nature of our instrument, we are able to perform these calibrations simultaneously at the same temperatures (-80°C to 30°C) and pressures (150 mbar to 760 mbar) as sampled ambient air during a flight. This higher accuracy can significantly influence the science utilizing this data, which we will illustrate using preliminary data from our most recent field deployment, the NSF Deep Convective Clouds and Chemistry Experiment in May-June 2012

Higher speed VCSELs by photon lifetime reduction

NASA Astrophysics Data System (ADS)

Westbergh, Petter; Gustavsson, Johan S.; Kögel, Benjamin; Haglund, Åsa; Larsson, Anders; Joel, Andrew

2011-03-01

The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.

SCALAR MULTI-PASS ATOMIC MAGNETOMETER

DTIC Science & Technology

2017-08-01

primarily by atomic shot noise. Furthermore, the spectrum of quantum spin noise provides information on the time correlation between the spins and...the resulting light to be shot -noise-limited both with and without the polarizer in place. Newer Vixar VCSELs with internal gratings on output...described on inside pages STINFO COPY AIR FORCE RESEARCH LABORATORY SENSORS DIRECTORATE WRIGHT-PATTERSON AIR FORCE BASE, OH 45433-7320

Volumetric cutaneous microangiography of human skin in vivo by VCSEL swept-source optical coherence tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woo June Choi; Wang, R K

2014-08-31

We demonstrate volumetric cutaneous microangiography of the human skin in vivo that utilises 1.3-μm high-speed sweptsource optical coherence tomography (SS-OCT). The swept source is based on a micro-electro-mechanical (MEMS)-tunable vertical cavity surface emission laser (VCSEL) that is advantageous in terms of long coherence length over 50 mm and 100 nm spectral bandwidth, which enables the visualisation of microstructures within a few mm from the skin surface. We show that the skin microvasculature can be delineated in 3D SS-OCT images using ultrahigh-sensitive optical microangiography (UHS-OMAG) with a correlation mapping mask, providing a contrast enhanced blood perfusion map with capillary flow sensitivity.more » 3D microangiograms of a healthy human finger are shown with distinct cutaneous vessel architectures from different dermal layers and even within hypodermis. These findings suggest that the OCT microangiography could be a beneficial biomedical assay to assess cutaneous vascular functions in clinic. (laser biophotonics)« less

Highly angular dependent high-contrast grating mirror and its application for transverse-mode control of VCSELs

NASA Astrophysics Data System (ADS)

Inoue, Shunya; Kashino, Junichi; Matsutani, Akihiro; Ohtsuki, Hideo; Miyashita, Takahiro; Koyama, Fumio

2014-09-01

We report on the design and fabrication of a highly angular dependent high contrast grating (HCG) mirror. The modeling and experiment on amorphous-Si/SiO2 HCG clearly show the large angular dependence of reflectivity, which enables single transverse-mode operations of large-area VCSELs. We fabricate 980 nm VCSELs with the angular dependent HCG functioning as a spatial frequency filter. We obtained the single transverse mode operation of the fabricated device in contrast to conventional VCSELs with semiconductor multilayer mirrors.

Widely tunable telecom MEMS-VCSEL for terahertz photomixing.

PubMed

Haidar, Mohammad Tanvir; Preu, Sascha; Paul, Sujoy; Gierl, Christian; Cesar, Julijan; Emsia, Ali; Küppers, Franko

2015-10-01

We report frequency-tunable terahertz (THz) generation with a photomixer driven by an ultra-broadband tunable micro-electro-mechanical system vertical-cavity surface-emitting laser (MEMS-VCSEL) and a fixed-wavelength VCSEL, as well as a tunable MEMS-VCSEL mixed with a distributed feedback (DFB) diode. A total frequency span of 3.4 THz is covered in direct detection mode and 3.23 THz in the homodyne mode. The tuning range is solely limited by the dynamic range of the photomixers and the Schottky diode/photoconductor used in the experiment.

Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD

NASA Astrophysics Data System (ADS)

Koyama, F.; Mukaihara, T.; Hayashi, Y.; Ohnoki, N.; Hatori, N.; Iga, K.

1995-01-01

We present a novel approach of on-wafer wavelength control for vertical cavity surface-emitting lasers (VCSEL's) using nonplanar metalorganic chemical vapor deposition. The resonant wavelength of 980 nm VCSEL's grown on a patterned substrate can be controlled in the wavelength range over 45 nm by changing the size of circular patterns. A multi-wavelength VCSEL linear array was fabricated by using this technique. The proposed method will be useful for multi-wavelength VCSEL arrays as well as for the cancellation of wavelength nonuniformity over a wafer.

Reliability of 1.3 micron VCSELs for metro area networks

NASA Astrophysics Data System (ADS)

Prakash, Simon R.; Chirovsky, Leo M. F.; Naone, Ryan L.; Galt, David; Kisker, Dave W.; Jackson, Andrew W.

2003-06-01

Vertical Cavity Surface Emitting Lasers (VCSELs) have been widely adopted in the 850nm data communications markets with great success. Using this technology as a basis, we have developed a 1.3 μm InGaAsN VCSEL and VCSEL Array technology for telecommunications applications. Since the reliability requirement of this market is less than 150 FITs over 20 years, we focused a great deal of development time on the reliability of the device, and so far have been able to predict an MTTF of over 13 million hours or 71 FITs. This report provides a brief summary of the characteristics of the VCSEL in various stress conditions and the methodology used to measure both the wear-out and random failure rates of the devices.

Design rules for a compact and low-cost optical position sensing of MOEMS tilt mirrors based on a Gaussian-shaped light source

NASA Astrophysics Data System (ADS)

Baumgart, Marcus; Tortschanoff, Andreas

2013-05-01

A tilt mirror's deflection angle tracking setup is examined from a theoretical point of view. The proposed setup is based on a simple optical approach and easily scalable. Thus, the principle is especially of interest for small and fast oscillating MEMS/MOEMS based tilt mirrors. An experimentally established optical scheme is used as a starting point for accurate and fast mirror angle-position detection. This approach uses an additional layer, positioned under the MOEMS mirror's backside, consisting of a light source in the center and two photodetectors positioned symmetrical around the center. The mirror's back surface is illuminated by the light source and the intensity change due to mirror tilting is tracked via the photodiodes. The challenge of this method is to get a linear relation between the measured intensity and the current mirror tilt angle even for larger angles. State-of-the-art MOEMS mirrors achieve angles up to ±30°, which exceeds the linear angle approximations. The use of an LED, small laser diode or VCSEL as a lightsource is appropriate due to their small size and inexpensive price. Those light sources typically emit light with a Gaussian intensity distribution. This makes an analytical prediction of the expected detector signal quite complicated. In this publication an analytical simulation model is developed to evaluate the influence of the main parameters for this optical mirror tilt-sensor design. An easy and fast to calculate value directly linked to the mirror's tilt-angle is the "relative differential intensity" (RDI = (I1 - I2) / (I1 + I2)). Evaluation of its slope and nonlinear error highlights dependencies between the identified parameters for best SNR and linearity. Also the energy amount covering the detector area is taken into account. Design optimizing rules are proposed and discussed based on theoretical considerations.

Single-mode 850-nm vertical-cavity surface-emitting lasers with Zn-diffusion and oxide-relief apertures for > 50 Gbit/sec OOK and 4-PAM transmission

NASA Astrophysics Data System (ADS)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jyehong; Ledentsov, N. N.; Yang, Ying-Jay

2017-02-01

Vertical-cavity surface-emitting lasers (VCSELs) has become the most important light source in the booming market of short-reach (< 300 meters) optical interconnect (OI). The next generation OI has been targeted at 56 Gbit/sec data rate per channel (CEI-56G) with the total data rate up to 400 Gbit/sec. However, the serious modal dispersion of multi-mode fiber (MMF), limited speed of VCSEL, and its high resistance (> 150 Ω) seriously limits the >50 Gbit/sec linking distance (< 10 m) by using only on-off keying (OOK) modulation scheme without any signal processing techniques. In contrast to OOK, 4-PAM modulation format is attractive for >50 Gbit/sec transmission due to that it can save one-half of the required bandwidth. Nevertheless, a 4.7 dB optical power penalty and the linearity of transmitter would become issues in the 4-PAM linking performance. Besides, in the modern OI system, the optics transreceiver module must be packaged as close as possible with the integrated circuits (ICs). The heat generated from ICs will become an issue in speed of VSCEL. Here, we review our recent work about 850 nm VCSEL, which has unique Zn-diffusion/oxide-relief apertures and special p- doping active layer with strong wavelength detuning to further enhance its modulation speed and high-temperature (85°C) performances. Single-mode (SM) devices with high-speed ( 26 GHz), reasonable resistance ( 70 Ω) and moderate output power ( 1.5 mW) can be achieved. Error-free 54 Gbit/sec OOK transmission through 1km MMF has been realized by using such SM device with signal processing techniques. Besides, the volterra nonlinear equalizer has been applied in our 4-PAM 64 Gbit/sec transmission through 2-km OM4 MMF, which significantly enhance the linearity of device and outperforms fed forward equalization (FFE) technique. Record high bit-rate distance product of 128.km is confirmed for optical-interconnect applications.

Optoelectronic Materials Center

DTIC Science & Technology

1991-06-11

surface - emitting GaAs/AIGaAs vertical - cavity laser (TJ- VCSEL ) incorporating wavelength-resonant...multi-quantum well, vertical cavity surface - emitted laser . This structure consists entirely of undoped epilayers, thus simplifying the problems of... cavity surface - emitting lasers ( VCSELs ) for doubling and for parallel optical data processing. Progress - GaAIAs/GaAs and InGaAs/GaAs RPG- VCSEL

Characterization of Nonlinear Effects in Optically Pumped Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-12-01

Vertical Cavity Surface Emitting Lasers ( VCSELs ) are an exciting...lines A-3 X AFIT/GEOiENP/93 D-01 Abstract The nonlinear characteristics of optically pumped Vertical Cavity Surface Emitting Lasers ( VCSELs ) are...uniformity of the VCSEL fabrication. xi Characterization of Nonlinear Effects in Optically Pumped Vertical Cavity Surface Emitting Lasers

Monolithic subwavelength high refractive-index-contrast grating VCSELs

NASA Astrophysics Data System (ADS)

Gebski, Marcin; Dems, Maciej; Lott, James A.; Czyszanowski, Tomasz

2016-03-01

In this paper we present optical design and simulation results of vertical-cavity surface-emitting lasers (VCSELs) that incorporate monolithic subwavelength high refractive-index-contrast grating (MHCG) mirrors - a new variety of HCG mirror that is composed of high index material surrounded only on one side by low index material. We show the impact of an MHCG mirror on the performance of 980 nm VCSELs designed for high bit rate and energy-efficient optical data communications. In our design, all or part of the all-semiconductor top coupling distributed Bragg reflector mirror is replaced by an undoped gallium-arsenide MHCG. We show how the optical field intensity distribution of the VCSEL's fundamental mode is controlled by the combination of the number of residual distributed Bragg reflector (DBR) mirror periods and the physical design of the topmost gallium-arsenide MHCG. Additionally, we numerically investigate the confinement factors of our VCSELs and show that this parameter for the MHCG DBR VCSELs may only be properly determined in two or three dimensions due to the periodic nature of the grating mirror.

Simultaneous 10 Gbps data and polarization-based pulse-per-second clock transmission using a single VCSEL for high-speed optical fibre access networks

NASA Astrophysics Data System (ADS)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-01-01

Access networks based on vertical cavity surface emitting laser (VCSEL) transmitters offer alternative solution in delivering different high bandwidth, cost effective services to the customer premises. Clock and reference frequency distribution is critical for applications such as Coordinated Universal Time (UTC), GPS, banking and big data science projects. Simultaneous distribution of both data and timing signals over shared infrastructure is thus desirable. In this paper, we propose and experimentally demonstrate a novel, cost-effective technique for multi-signal modulation on a single VCSEL transmitter. Two signal types, an intensity modulated 10 Gbps data signal and a polarization-based pulse per second (PPS) clock signal are directly modulated onto a single VCSEL carrier at 1310 nm. Spectral efficiency is maximized by exploiting inherent orthogonal polarization switching of the VCSEL with changing bias in transmission of the PPS signal. A 10 Gbps VCSEL transmission with PPS over 11 km of G.652 fibre introduced a transmission penalty of 0.52 dB. The contribution of PPS to this penalty was found to be 0.08 dB.

Flip-chip integration of tilted VCSELs onto a silicon photonic integrated circuit.

PubMed

Lu, Huihui; Lee, Jun Su; Zhao, Yan; Scarcella, Carmelo; Cardile, Paolo; Daly, Aidan; Ortsiefer, Markus; Carroll, Lee; O'Brien, Peter

2016-07-25

In this article we describe a cost-effective approach for hybrid laser integration, in which vertical cavity surface emitting lasers (VCSELs) are passively-aligned and flip-chip bonded to a Si photonic integrated circuit (PIC), with a tilt-angle optimized for optical-insertion into standard grating-couplers. A tilt-angle of 10° is achieved by controlling the reflow of the solder ball deposition used for the electrical-contacting and mechanical-bonding of the VCSEL to the PIC. After flip-chip integration, the VCSEL-to-PIC insertion loss is -11.8 dB, indicating an excess coupling penalty of -5.9 dB, compared to Fibre-to-PIC coupling. Finite difference time domain simulations indicate that the penalty arises from the relatively poor match between the VCSEL mode and the grating-coupler.

Optical Characteristics of Vertical Cavity Surface Emitting Lasers and Two Dimensional Coherently Coupled Arrays.

NASA Astrophysics Data System (ADS)

Catchmark, Jeffrey Michael

1995-01-01

The following describes extensive experimental and theoretical research concerning the optical, electrical and thermal characteristics of GaAs/AlGaAs vertical cavity surface emitting lasers (VCSELs) and coherently coupled two dimensional VCSEL arrays grown by molecular beam epitaxy. The temperature and wavelength performance of VCSELs containing various epitaxial designs is discussed in detail. By employing a high barrier confinement spacer region and by blue shifting the optical gain with respect to the Fabry Perot transmission wavelength, greater than 150^circ rm C continuous wave operation was obtained. This is accomplished while maintaining a variation in the threshold current of only +/-0.93mA over a temperature range of 150^circrm C. This exceptional performance is achieved while attaining a minimum threshold current of approximately 4.3mA at 75^circrm C. In addition, the optical characteristics of multi-transverse mode VCSEL arrays are examined experimentally. A total of nine transverse modes have been identified and are found to couple coherently into distinct array modes. While operating in higher order transverse modes, a record 1.4W (pulsed) of optical power is obtained from a 15 x 15 VCSEL array. Array mode formation in coherently coupled VCSEL arrays is also examined theoretically. A numerical model is developed to describe the formation of supermodes in reflectivity modulated VCSEL arrays. Using this model, the effects of depth of reflectivity modulation, cavity length, window size and grid size on mode formation are explored. The array modes predicted by this model are in agreement with those observed experimentally. Analytic models will also be presented describing the effects of thermally induced waveguiding on the optical characteristics of VCSELs operating in the fundamental transverse mode. A thermal waveguide is found to have a significant effect on the spot size and radius of curvature of the phase of the fundamental optical mode. In addition, an analytic model is developed to predict the higher order transverse modes of a VCSEL exhibiting a cruciform type geometry.

Development of GaInNAs-based 1.3-μm VCSEL

NASA Astrophysics Data System (ADS)

Ramakrishnan, Arun; Ebbinghaus, G.; Lima, A.; Supper, D.; Kristen, Guenter; Popp, M.; Degen, C.; Althaus, H.-L.; Killer, T.; Scholz, R.; Melinde, M.; Sauter, M.; Weigert, M.; Riechert, Henning; Steinle, Gunther

2003-12-01

In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.

Semi-automatic characterization and simulation of VCSEL devices for high speed VSR communications

NASA Astrophysics Data System (ADS)

Pellevrault, S.; Toffano, Z.; Destrez, A.; Pez, M.; Quentel, F.

2006-04-01

Very short range (VSR) high bit rate optical fiber communications are an emerging market dedicated to local area networks, digital displays or board to board interconnects within real time calculators. In this technology, a very fast way to exchange data with high noise immunity and low-cost is needed. Optical multimode graded index fibers are used here because they have electrical noise immunity and are easier to handle than monomode fibers. 850 nm VCSEL are used in VSR communications because of their low cost, direct on-wafer tests, and the possibility of manufacturing VCSEL arrays very easily compared to classical optical transceivers using edge-emitting laser diodes. Although much research has been carried out in temperature modeling on VCSEL emitters, few studies have been devoted to characterizations over a very broad range of temperatures. Nowadays, VCSEL VSR communications tend to be used in severe environments such as space, avionics and military equipments. Therefore, a simple way to characterize VCSEL emitters over a broad range of temperature is required. In this paper, we propose a complete characterization of the emitter part of 2.5 Gb/s opto-electrical transceiver modules operating from -40°C to +120°C using 850 nm VCSELs. Our method uses simple and semi-automatic measurements of a given set of chosen device parameters in order to make fast and efficient simulations.

High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85 °C for short reach optical interconnects

NASA Astrophysics Data System (ADS)

Mutig, Alex; Lott, James A.; Blokhin, Sergey A.; Moser, Philip; Wolf, Philip; Hofmann, Werner; Nadtochiy, Alexey M.; Bimberg, Dieter

2011-03-01

The progressive penetration of optical communication links into traditional copper interconnect markets greatly expands the applications of vertical cavity surface emitting lasers (VCSELs) for the next-generation of board-to-board, moduleto- module, chip-to-chip, and on-chip optical interconnects. Stability of the VCSEL parameters at high temperatures is indispensable for such applications, since these lasers typically reside directly on or near integrated circuit chips. Here we present 980 nm oxide-confined VCSELs operating error-free at bit rates up to 25 Gbit/s at temperatures as high as 85 °C without adjustment of the drive current and peak-to-peak modulation voltage. The driver design is therefore simplified and the power consumption of the driver electronics is lowered, reducing the production and operational costs. Small and large signal modulation experiments at various temperatures from 20 up to 85 °C for lasers with different oxide aperture diameters are presented in order to analyze the physical processes controlling the performance of the VCSELs. Temperature insensitive maximum -3 dB bandwidths of around 13-15 GHz for VCSELs with aperture diameters of 10 μm and corresponding parasitic cut-off frequencies exceeding 22 GHz are observed. Presented results demonstrate the suitability of our VCSELs for practical high speed and high temperature stable short-reach optical links.

Ultrafast Directional Beam Switching in Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast directional beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 microns in diameter placed about 1 micron apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degrees.

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

Wavelength-scale Microlasers based on VCSEL-Photonic Crystal Architecture

DTIC Science & Technology

2015-01-20

molecular beam epitaxy , MBE). We will also assume the triangular lattice of air...Abbreviations, and Acronyms InP: indium phosphide InGaAsP: indium gallium arsenide phosphide MBE: molecular beam epiitaxy VCSEL : vertical cavity...substrates and were grown by MBE. Electron beam lithography and reactive ion etching was used to deep‐etch the holes of the PhC‐ VCSELS ,

Multi-wavelength VCSEL arrays using high-contrast gratings

NASA Astrophysics Data System (ADS)

Haglund, Erik; Gustavsson, Johan S.; Sorin, Wayne V.; Bengtsson, Jörgen; Fattal, David; Haglund, Àsa; Tan, Michael; Larsson, Anders

2017-02-01

The use of a high-contrast grating (HCG) as the top mirror in a vertical-cavity surface-emitting laser (VCSEL) allows for setting the resonance wavelength by the grating parameters in a post-epitaxial growth fabrication process. Using this technique, we demonstrate electrically driven multi-wavelength VCSEL arrays at 980 nm wavelength. The VCSELs are GaAs-based and the suspended GaAs HCGs were fabricated using electron-beam lithography, dry etching and selective removal of an InGaP sacrificial layer. The air-coupled cavity design enabled 4-channel arrays with 5 nm wavelength spacing and sub-mA threshold currents thanks to the high HCG reflectance.

High-speed 850 nm VCSELs with 28 GHz modulation bandwidth for short reach communication

NASA Astrophysics Data System (ADS)

Westbergh, Petter; Safaisini, Rashid; Haglund, Erik; Gustavsson, Johan S.; Larsson, Anders; Joel, Andrew

2013-03-01

We present results from our new generation of high performance 850 nm oxide confined vertical cavity surface-emitting lasers (VCSELs). With devices optimized for high-speed operation under direct modulation, we achieve record high 3dB modulation bandwidths of 28 GHz for ~4 μm oxide aperture diameter VCSELs, and 27 GHz for devices with a ~7 μm oxide aperture diameter. Combined with a high-speed photoreceiver, the ~7 μm VCSEL enables error-free transmission at data rates up to 47 Gbit/s at room temperature, and up to 40 Gbit/s at 85°C.

Integrated MEMS-tunable VCSELs for reconfigurable optical interconnects

NASA Astrophysics Data System (ADS)

Kögel, Benjamin; Debernardi, Pierluigi; Westbergh, Petter; Gustavsson, Johan S.; Haglund, Åsa; Haglund, Erik; Bengtsson, Jörgen; Larsson, Anders

2012-03-01

A simple and low-cost technology for tunable vertical-cavity surface-emitting lasers (VCSELs) with curved movable micromirror is presented. The micro-electro-mechanical system (MEMS) is integrated with the active optical component (so-called half-VCSEL) by means of surface-micromachining using a reflown photoresist droplet as sacrificial layer. The technology is demonstrated for electrically pumped, short-wavelength (850 nm) tunable VCSELs. Fabricated devices with 10 μm oxide aperture are singlemode with sidemode suppression >35 dB, tunable over 24 nm with output power up to 0.5mW, and have a beam divergence angle <6 °. An improved high-speed design with reduced parasitic capacitance enables direct modulation with 3dB-bandwidths up to 6GHz and error-free data transmission at 5Gbit/s. The modulation response of the MEMS under electrothermal actuation has a bandwidth of 400 Hz corresponding to switching times of about 10ms. The thermal crosstalk between MEMS and half-VCSEL is negligible and not degrading the device performance. With these characteristics the integrated MEMS-tunable VCSELs are basically suitable for use in reconfigurable optical interconnects and ready for test in a prototype system. Schemes for improving output power, tuning speed, and modulation bandwidth are briefly discussed.

A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures

NASA Astrophysics Data System (ADS)

Mei, Yang; Xu, Rong-Bin; Xu, Huan; Ying, Lei-Ying; Zheng, Zhi-Wei; Zhang, Bao-Ping; Li, Mo; Zhang, Jian

2018-01-01

Thermal characteristics of GaN-based vertical cavity surface emitting lasers (VCSELs) with three typical structures were investigated both theoretically and experimentally. The simulation results based on a steady state quasi three-dimensional cylindrical model show that the thermal resistance (R th) is affected by cavity length, mesa size, as well as the bottom distributed Bragg reflector (DBR) size, and the detail further depends on different structures. Among different devices, GaN VCSEL with a hybrid cavity formed by one nitride bottom DBR and another dielectric top DBR is featured with lower R th, which is meanwhile affected strongly by the materials of the epitaxial bottom DBR. The main issues affecting the thermal dissipation in VCSELs with double dielectric DBRs are the bottom dielectric DBR and the dielectric current-confinement layer. To validate the simulation results, GaN-based VCSEL bonded on a copper plate was fabricated. R th of this device was measured and the results agreed well with the simulation. This work provides a better understanding of the thermal characteristics of GaN-based VCSELs and is useful in optimizing the structure design and improving the device performance.

Ultra-low loss fully-etched grating couplers for perfectly vertical coupling compatible with DUV lithography tools

NASA Astrophysics Data System (ADS)

Dabos, G.; Pleros, N.; Tsiokos, D.

2016-03-01

Hybrid integration of VCSELs onto silicon-on-insulator (SOI) substrates has emerged as an attractive approach for bridging the gap between cost-effective and energy-efficient directly modulated laser sources and silicon-based PICs by leveraging flip-chip (FC) bonding techniques and silicon grating couplers (GCs). In this context, silicon GCs, should comply with the process requirements imposed by the complimentary-metal-oxide-semiconductor manufacturing tools addressing in parallel the challenges originating from the perfectly vertical incidence. Firstly, fully etched GCs compatible with deep-ultraviolet lithography tools offering high coupling efficiencies are imperatively needed to maintain low fabrication cost. Secondly, GC's tolerance to VCSEL bonding misalignment errors is a prerequisite for practical deployment. Finally, a major challenge originating from the perfectly vertical coupling scheme is the minimization of the direct back-reflection to the VCSEL's outgoing facet which may destabilize its operation. Motivated from the above challenges, we used numerical simulation tools to design an ultra-low loss, bidirectional VCSEL-to-SOI optical coupling scheme for either TE or TM polarization, based on low-cost fully etched GCs with a Si-layer of 340 nm without employing bottom reflectors or optimizing the buried-oxide layer. Comprehensive 2D Finite-Difference-Time- Domain simulations have been performed. The reported GC layout remains fully compatible with the back-end-of-line (BEOL) stack associated with the 3D integration technology exploiting all the inter-metal-dielectric (IMD) layers of the CMOS fab. Simulation results predicted for the first time in fully etched structures a coupling efficiency of as low as -0.87 dB at 1548 nm and -1.47 dB at 1560 nm with a minimum direct back-reflection of -27.4 dB and -14.2 dB for TE and TM polarization, respectively.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

Reconfigurable high-speed optical fibre networks: Optical wavelength conversion and switching using VCSELs to eliminate channel collisions

NASA Astrophysics Data System (ADS)

Boiyo, Duncan Kiboi; Chabata, T. V.; Kipnoo, E. K. Rotich; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-01-01

We experimentally provide an alternative solution to channel collisions through up-wavelength conversion and switching by using vertical cavity surface-emitting lasers (VCSELs). This has been achieved by utilizing purely optical wavelength conversion on VCSELs at the low attenuation, 1550 nm transmission window. The corresponding transmission and bit error-rate (BER) performance evaluation is also presented. In this paper, two 1550 nm VCSELs with 50-150 GHz channel spacing are modulated with a 10 Gb/s NRZ PRBS 27-1 data and their interferences investigated. A channel interference penalty range of 0.15-1.63 dB is incurred for 150-50 GHz channel spacing without transmission. To avoid channel collisions and to minimize high interference penalties, the transmitting VCSEL with data is injected into the side-mode of a slave VCSEL to obtain a new up converted wavelength. A 16 dB extinction ratio of the incoming wavelength is achieved when a 15 dBm transmitting beam is injected into the side-mode of a -4.5 dBm slave VCSEL. At 8.5 Gb/s, a 1.1 dB conversion and a 0.5 dB transmission penalties are realized when the converted wavelength is transmitted over a 24.7 km G.655 fibre. This work offers a low-cost, effective wavelength conversion and channel switching to reduce channel collision probability by reconfiguring channels at the node of networks.

InP-based three-dimensional photonic integrated circuits

NASA Astrophysics Data System (ADS)

Tsou, Diana; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volumes require high data communication bandwidth over longer distances than short wavelength (850 nm) multi-mode fiber systems can provide. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low cost, high-speed laser modules at 1310 and 1550 nm wavelengths are required. The great success of GaAs 850 nm VCSELs for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with available intrinsic materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits, which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits (PICs) have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform for fabricating InP-based photonic integrated circuits compatible with surface-emitting laser technology. Employing InP transparency at 1310 and 1550 nm wavelengths, we have created 3-D photonic integrated circuits (PICs) by utilizing light beams in both surface normal and in-plane directions within the InP-based structure. This additional beam routing flexibility allows significant size reduction and process simplification without sacrificing device performance. This innovative 3-D PIC technology platform can be easily extended to create surface-emitting lasers integrated with power monitoring detectors, micro-lenses, external modulators, amplifiers, and other passive and active components. Such added functionality can produce cost--effective solutions for the highest-end laser transmitters required for datacom and short range telecom networks, as well as fiber channels and other cost and performance sensitive applications. We present results for 1310 nm photonic IC surface-emitting laser transmitters operating at 2.5 Gbps without active thermal electric cooling.

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

VCSELs for datacom applications

NASA Astrophysics Data System (ADS)

Wipiejewski, Torsten; Wolf, Hans-Dieter; Korte, Lutz; Huber, Wolfgang; Kristen, Guenter; Hoyler, Charlotte; Hedrich, Harald; Kleinbub, Oliver; Albrecht, Tony; Mueller, Juergen; Orth, Andreas; Spika, Zeljko; Lutgen, Stephan; Pflaeging, Hartwig; Harrasser, Joerg; Droegemueller, Karsten; Plickert, Volker; Kuhl, Detlef; Blank, Juergen; Pietsch, Doris; Stange, Herwig; Karstensen, Holger

1999-04-01

The use of oxide confined VCSELs in datacom applications is demonstrated. The devices exhibit low threshold currents of approximately 3 mA and low electrical series resistance of about 50 (Omega) . The emission wavelength is in the 850 nm range. Life times of the devices are several million hours under normal operating conditions. VCSEL arrays are employed in a high performance parallel optical link called PAROLITM. This optical ink provides 12 parallel channels with a total bandwidth exceeding 12 Gbit/s. The VCSELs optimized for the parallel optical link show excellent threshold current uniformity between channels of < 50 (mu) A. The array life time drops compared to a single device, but is still larger than 1 million hours.

Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal

NASA Astrophysics Data System (ADS)

Yeh, Hsi-Jen J.; Smith, John S.

1994-03-01

The successful integration of strained quantum well InGaAs vertical-cavity surface-emitting lasers (VCSELs) on both Si and Cu substrates was described using a GaAs substrate removal technique. The GaAs VCSEL structure was metallized and bonded to the Si substrate after growth. The GaAs substrate was then removed by selective chemical wet etching. Finally, the bonded GaAs film metallized on the top (emitting) side and separate lasers were defined. This is the first time a VCSEL had been integrated on a Si substrate with its substrate removed. The performance enhancement of GaAs VCSELs bonded on good thermal conductors are demonstrated.

Handheld ultrahigh speed swept source optical coherence tomography instrument using a MEMS scanning mirror.

PubMed

Lu, Chen D; Kraus, Martin F; Potsaid, Benjamin; Liu, Jonathan J; Choi, Woojhon; Jayaraman, Vijaysekhar; Cable, Alex E; Hornegger, Joachim; Duker, Jay S; Fujimoto, James G

2013-12-20

We developed an ultrahigh speed, handheld swept source optical coherence tomography (SS-OCT) ophthalmic instrument using a 2D MEMS mirror. A vertical cavity surface-emitting laser (VCSEL) operating at 1060 nm center wavelength yielded a 350 kHz axial scan rate and 10 µm axial resolution in tissue. The long coherence length of the VCSEL enabled a 3.08 mm imaging range with minimal sensitivity roll-off in tissue. Two different designs with identical optical components were tested to evaluate handheld OCT ergonomics. An iris camera aided in alignment of the OCT beam through the pupil and a manual fixation light selected the imaging region on the retina. Volumetric and high definition scans were obtained from 5 undilated normal subjects. Volumetric OCT data was acquired by scanning the 2.4 mm diameter 2D MEMS mirror sinusoidally in the fast direction and linearly in the orthogonal slow direction. A second volumetric sinusoidal scan was obtained in the orthogonal direction and the two volumes were processed with a software algorithm to generate a merged motion-corrected volume. Motion-corrected standard 6 x 6 mm(2) and wide field 10 x 10 mm(2) volumetric OCT data were generated using two volumetric scans, each obtained in 1.4 seconds. High definition 10 mm and 6 mm B-scans were obtained by averaging and registering 25 B-scans obtained over the same position in 0.57 seconds. One of the advantages of volumetric OCT data is the generation of en face OCT images with arbitrary cross sectional B-scans registered to fundus features. This technology should enable screening applications to identify early retinal disease, before irreversible vision impairment or loss occurs. Handheld OCT technology also promises to enable applications in a wide range of settings outside of the traditional ophthalmology or optometry clinics including pediatrics, intraoperative, primary care, developing countries, and military medicine.

Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures

NASA Astrophysics Data System (ADS)

Chen, G.; Tien, C. L.; Wu, X.; Smith, J. S.

1994-05-01

This work develops a new measurement technique that determines the thermal diffusivity of thin films in both parallel and perpendicular directions, and presents experimental results on the thermal diffusivity of GaAs/AlGaAs-based thin-film structures. In the experiment, a modulated laser source heats up the sample and a fast-response temperature sensor patterned directly on the sample picks up the thermal response. From the phase delay between the heating source and the temperature sensor, the thermal diffusivity in either the parallel or perpendicular direction is obtained depending on the experimental configuration. The experiment is performed on a molecular-beam-epitaxy grown vertical-cavity surface-emitting laser (VCSEL) structure. The substrates of the samples are etched away to eliminate the effects of the interface between the film and the substrate. The results show that the thermal diffusivity of the VCSEL structure is 5-7 times smaller than that of its corresponding bulk media. The experiments also provide evidence on the anisotropy of thermal diffusivity caused solely by the effects of interfaces and boundaries of thin films.

Far-field emission characteristics and linewidth measurements of surface micro-machined MEMS tunable VCSELs

NASA Astrophysics Data System (ADS)

Paul, Sujoy; Gierl, Christian; Gründl, Tobias; Zogal, Karolina; Meissner, Peter; Amann, Markus-Christian; Küppers, Franko

2013-03-01

In this paper, we demonstrate for the first time the far-field experimental results and the linewidth characteris- tics for widely tunable surface-micromachined micro-electro-mechanical system (MEMS) vertical-cavity surface- emitting lasers (VCSELs) operating at 1550 nm. The fundamental Gaussian mode emission is confirmed by optimizing the radius of curvature of top distributed Bragg reflector (DBR) membrane and by choosing an ap- propriate diameter of circular buried tunnel junctions (BTJs) so that only the fundamental Gaussian mode can sustain. For these VCSELs, a mode-hop free continuous tuning over 100 nm has already been demonstrated, which is achieved by electro-thermal tuning of the MEMS mirror. The fiber-coupled optical power of 2mW over the entire tuning range has been reported. The singlemode laser emission has more than 40 dB of side-mode suppression ratio (SMSR). The smallest linewidth achieved with these of MEMS tunable VCSELs is 98MHz which is one order of magnitude higher than that of fixed-wavelength VCSELs.

Polarization and dynamical properties of VCSELs-based photonic neuron subject to optical pulse injection

NASA Astrophysics Data System (ADS)

Xiang, Shuiying; Wen, Aijun; Zhang, Hao; Li, Jiafu; Guo, Xingxing; Shang, Lei; Lin, Lin

2016-11-01

The polarization-resolved nonlinear dynamics of vertical-cavity surface-emitting lasers (VCSELs) subject to orthogonally polarized optical pulse injection are investigated numerically based on the spin flip model. By extensive numerical bifurcation analysis, the responses dynamics of photonic neuron based on VCSELs under the arrival of external stimuli of orthogonally polarized optical pulse injection are mainly discussed. It is found that, several neuron-like dynamics, such as phasic spiking of a single abrupt large amplitude pulse followed with or without subthreshold oscillation, and tonic spiking with multiple periodic pulses, are successfully reproduced in the numerical model of VCSELs. Besides, the effects of stimuli strength, pump current, frequency detuning, as well as the linewidth enhancement factor on the neuron-like response dynamics are examined carefully. The operating parameters ranges corresponding to different neuron-like dynamics are further identified. Thus, the numerical model and simulation results are very useful and interesting for the ultrafast brain-inspired neuromorphic photonics systems based on VCSELs.

Visible Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-01-01

circular output beams are easily coupled into optical fibers, or focused or collimated with microlenslets. The VCSELs can be tested individually at the wafer...semiconductor visible VCSEL . Also shown is the DBR reflectance and reflectivity phase , as seen from the optical cavity, and the electric field intensity ...76 xv Figure page 2.32 Calculated electric field intensity for the example IR and visible VCSELs shown in Fig. 2.31 ........................... 79

VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

DTIC Science & Technology

2017-03-01

need of high efficiency with high temperature operation eliminates essentially all laser diode technologies except VCSELs. Therefore scaling of the...CW laser diode and separate modulator. Lower diagram circuitry shows the case for a DML VCSEL. The small gain volume and high speed modulation...speed of the modulator. However the CW laser that is needed for the modulator appears to create a technological roadblock for laser diode platforms

InGaAs focal plane arrays for low-light-level SWIR imaging

NASA Astrophysics Data System (ADS)

MacDougal, Michael; Hood, Andrew; Geske, Jon; Wang, Jim; Patel, Falgun; Follman, David; Manzo, Juan; Getty, Jonathan

2011-06-01

Aerius Photonics will present their latest developments in large InGaAs focal plane arrays, which are used for low light level imaging in the short wavelength infrared (SWIR) regime. Aerius will present imaging in both 1280x1024 and 640x512 formats. Aerius will present characterization of the FPA including dark current measurements. Aerius will also show the results of development of SWIR FPAs for high temperaures, including imagery and dark current data. Finally, Aerius will show results of using the SWIR camera with Aerius' SWIR illuminators using VCSEL technology.

20-Gbps optical LiFi transport system.

PubMed

Ying, Cheng-Ling; Lu, Hai-Han; Li, Chung-Yi; Cheng, Chun-Jen; Peng, Peng-Chun; Ho, Wen-Jeng

2015-07-15

A 20-Gbps optical light-based WiFi (LiFi) transport system employing vertical-cavity surface-emitting laser (VCSEL) and external light injection technique with 16-quadrature amplitude modulation (QAM)-orthogonal frequency-division multiplexing (OFDM) modulating signal is proposed. Good bit error rate (BER) performance and clear constellation map are achieved in our proposed optical LiFi transport systems. An optical LiFi transport system, delivering 16-QAM-OFDM signal over a 6-m free-space link, with a data rate of 20 Gbps, is successfully demonstrated. Such a 20-Gbps optical LiFi transport system provides the advantage of a free-space communication link for high data rates, which can accelerate the visible laser light communication (VLLC) deployment.

VCSEL based, wearable, continuously monitoring pulse oximeter.

PubMed

Kollmann, Daniel; Hogan, William K; Steidl, Charles; Hibbs-Brenner, Mary K; Hedin, Daniel S; Lichter, Patrick A

2013-01-01

We present the development of a novel pulse oximeter based on low power, low cost, Vertical Cavity Surface Emitting Laser (VCSEL) technology. This new design will help address a need to perform regular measurements of pulse oximetry for patients with chronic obstructive pulmonary disease. VCSELs with wavelengths suitable for pulse oximetry were developed and packaged in a PLCC package for a low cost solution that is easy to integrate into a pulse oximeter design. The VCSELs were integrated into a prototype pulse oximeter that is unobtrusive and suitable for long term wearable use. The prototype achieved good performance compared the Nonin Onyx II pulse oximeter at less than one fifth the weight in a design that can be worn behind the ear like a hearing aid.

A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Li, Chung-Yi; Tsai, Wen-Shing

2018-02-01

This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

The Effects of Optical Feedback on Polarization of Vertical Cavity Surface Emitting Lasers

DTIC Science & Technology

1993-12-01

Beam Mode TEMN Dichroic Beam Splitters (2) Manufacturer CVI Maximum Reflectance 375 mrn, 950 un Maximum Transmission 830 rnm, 910 mn Design Angle 5... beam splitter (DBS). The DBS reflects the majority of the light at the VCSEL wavelength (and passes most of the pump wavelength). A normal beamsplitter...degrees Beam Splitters Manufacturer Melles Griot Reflectancetrransnittance -50/50 Filters (2) Manufacturer Ealing Center Wavelength 880 urn, 940 mun

Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

2016-03-01

Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

NASA Astrophysics Data System (ADS)

Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

2017-02-01

A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

Capacity upgrade in short-reach optical fibre networks: simultaneous 4-PAM 20 Gbps data and polarization-modulated PPS clock signal using a single VCSEL carrier

NASA Astrophysics Data System (ADS)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-11-01

In this work, a four-level pulse amplitude modulation (4-PAM) format with a polarization-modulated pulse per second (PPS) clock signal using a single vertical cavity surface emitting laser (VCSEL) carrier is for the first time experimentally demonstrated. We propose uncomplex alternative technique for increasing capacity and flexibility in short-reach optical communication links through multi-signal modulation onto a single VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated onto a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by exploiting the inherent orthogonal polarization switching of the VCSEL carrier with changing bias in transmission of a PPS clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal using a single VCSEL carrier. It is the first time a signal VCSEL carrier is reported to simultaneously transmit a directly modulated 20 Gbps 4-PAM data signal and a polarization-based PPS clock signal. We further demonstrate on the design of a software-defined digital signal processing (DSP)-assisted receiver as an alternative to costly receiver hardware. Experimental results show that a 3.21 km fibre transmission with simultaneous 20 Gbps 4-PAM data signal and polarization-based PPS clock signal introduced a penalty of 3.76 dB. The contribution of polarization-based PPS clock signal to this penalty was found out to be 0.41 dB. Simultaneous distribution of data and timing clock signals over shared network infrastructure significantly increases the aggregated data rate at different optical network units (ONUs), without costly investment.

Bit Error Ratio Test Equipment for High Speed Vertical Cavity Transistor Laser and MicroCavity VCSEL and Photo Receiver

DTIC Science & Technology

2015-08-31

Ratio Test Equipment for High Speed Vertical Cavity Transistor Laser & MicroCavity VCSEL and Photo Receiver The views, opinions and/or findings...suggesstions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis...for High Speed Vertical Cavity Transistor Laser & MicroCavity VCSEL and Photo Receiver Report Title In the previous DURIP award (W911NF-13-1-0287

Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Nazaruk, D. E.; Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Vasil'ev, A. P.; Gladyshev, A. G.; Pavlov, M. M.; Blokhin, A. A.; Kulagina, M. M.; Vashanova, K. A.; Zadiranov, Yu M.; Fefelov, A. G.; Ustinov, V. M.

2014-12-01

A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range.

>100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

NASA Astrophysics Data System (ADS)

Wang, C. S.; Koda, R.; Huntington, A. S.; Gossard, A. C.; Coldren, L. A.

2005-04-01

High-quality InAlGaAs digital-alloy active regions using submonolayer superlattices were developed and employed in a 3-stage bipolar cascade multiple-active-region vertical cavity surface emitting laser (VCSEL) design. The photoluminescence intensity and linewidth of these active regions were optimized by varying the substrate temperature and digitization period. These active regions exhibit considerable improvement over previously developed digital-alloy active regions and are comparable to analog-alloy active regions. Multiple-active-region VCSELs, grown all-epitaxially by MBE on InP, demonstrate greater than 100% output differential efficiency at 1.55-μm emission. A record high 104% output differential efficiency was achieved for a 3-stage long-wavelength VCSEL.

A Comparative Study of QD and Nitrogen-Based 1.3 mu m VCSELs

DTIC Science & Technology

2001-06-01

molecular beam epitaxy (MBE) proposed as promising candidates for 1.3 /tm emitters. Among them InGaAsN quantum well (QW) and InGaAs quantum dots (QD... VCSELs DISTRIBUTION: Approved for public release, distribution unlimited Availability: Hard copy only. This paper is part of the following report: TITLE...and Technology" LOED.02 St Petersburg, Russia, June 18-22, 2001 ©0 2001 loffe Institute A comparative study of QD and nitrogen-based 1.3 /tm VCSELs A. P

A sensor-type application of a self-oscillating dynamic system with a fiber optic feedback line, including chemical sensors and biosensors

NASA Astrophysics Data System (ADS)

Rabinovich, Emmanuel M.

2004-05-01

We present an overview of research, conducted and published by the author and colleagues during the preceding decade, with self-oscillating dynamic systems. Special attention has been addressed to sensor type applications that allow one to design a new type of sensors of different physical parameters as well as using system for chemical and biosensors. Many detection methods exploit self-oscillating systems, such as lasers and RF or microwave oscillators, and use changes introduced into a feedback mechanism (for instance laser inter-cavity spectroscopy) for evaluation of different physical parameters such as refractive indices or absorption coefficients. Typically, that approach is very efficient, is easy to implement, and gives high sensitivity. We have demonstrated that a similar method can be used in the case of an RF optoelectronic self-oscillating system (OSOS) with a fiber-optic feedback line. Using fiber as an element of a positive feedback line allows one to design a new family of fiber-optic sensors each of which can be integrated into a fiber-optic feedback line. Changes introduced into the feedback line of an OSOS typically cause an RF frequency shift that can be measured very precisely with an RF frequency counter or spectrum analyzer. For some types of sensors an OSOS can easily incorporate and utilize advantages of well-developed modern inexpensive light sources (VCSELs, LEDs) and opto-electronic components that have been designed for communication purposes. A single closed loop OSOS can be easily duplicated for sensor array measurement via the use of parallel fiber-optics (for example VCSEL arrays and fiber ribbon cables) that have been well developed for telecommunication systems.

Photonic generation of polarization-resolved wideband chaos with time-delay concealment in three-cascaded vertical-cavity surface-emitting lasers.

PubMed

Liu, Huijie; Li, Nianqiang; Zhao, Qingchun

2015-05-10

Optical chaos generated by chaotic lasers has been widely used in several important applications, such as chaos-based communications and high-speed random-number generators. However, these applications are susceptible to degradation by the presence of time-delay (TD) signature identified from the chaotic output. Here we propose to achieve the concealment of TD signature, along with the enhancement of chaos bandwidth, in three-cascaded vertical-cavity surface-emitting lasers (VCSELs). The cascaded system is composed of an external-cavity master VCSEL, a solitary intermediate VCSEL, and a solitary slave VCSEL. Through mapping the evolutions of TD signature and chaos bandwidth in the parameter space of the injection strength and frequency detuning, photonic generation of polarization-resolved wideband chaos with TD concealment is numerically demonstrated for wide regions of the injection parameters.

850-nm Zn-diffusion vertical-cavity surface-emitting lasers with with oxide-relief structure for high-speed and energy-efficient optical interconnects from very-short to medium (2km) reaches

NASA Astrophysics Data System (ADS)

Shi, Jin-Wei; Wei, Chia-Chien; Chen, Jason (Jyehong); Yang, Ying-Jay

2015-03-01

High-speed and "green" ~850 nm vertical-cavity surface-emitting lasers (VCSELs) have lately attracted lots of attention due to their suitability for applications in optical interconnects (OIs). To further enhance the speed and its maximum allowable linking distance of VCSELs are two major trends to meet the requirement of OI in next generation data centers. Recently, by use of the advanced 850 nm VCSEL technique, data rate as high as 64 Gbit/sec over 57m and 20 Gbit/sec over 2km MMF transmission have been demonstrated, respectively. Here, we will review our recent work about 850 nm Zn-diffusion VCSELs with oxide-relief apertures to further enhance the above-mentioned performances. By using Zn-diffusion, we can not only reduce the device resistance but also manipulate the number of optical modes to benefit transmission. Combing such device, which has excellent single-mode (SMSR >30 dB) and high-power (~7mW) performance, with advanced modulation format (OFDM), record-high bit-rate-distance-product through MMF (2.3 km×28 Gbit/sec) has been demonstrated. Furthermore, by selective etching away the oxide aperture inside Zn-diffusion VCSEL, significant enhancement of device speed, D-factor, and reliability can be observed. With such unique VCSEL structure, >40 Gbit/sec energy-efficient transmission over 100m MMF under extremely low-driving current density (<10kA/cm2) has been successfully demonstrated.

Impact of long-pass interferential filters on dark current and background light rejection in Silicon Photomultipliers

NASA Astrophysics Data System (ADS)

Mazzillo, M.; Sciuto, A.; Libertino, S.; Lombardo, S.; Fallica, G.

2018-02-01

There is an increasing interest in using Silicon Photomultipliers (SiPMs) in emerging applications where the detectors have to operate in ambient environment with high sensitivity and fast timing response in combination with narrow bandwidth light emitting sources like LEDs or VCSELs. The need to use large area detectors for optimizing the light collection efficiency, due to the low optical fluxes to be usually detected, imposes the optimization of the SiPM performance in specific wavelength ranges (usually visible or near infrared), to fully exploit the single photon sensitivity of these detectors and not to reduce at the same time their dynamic range. The use of proper optical long-pass filters on the detector's package can represent a suitable way to reach both these targets, through the reduction of environmental light absorption. Here we present the preliminary results obtained from the characterization of n+-p SiPMs with commercial long-pass filters with increasing cut-on wavelength in the range 500 nm-900 nm glued on the top side of the detector's package. The performance of the detectors has been evaluated in terms of dark current variation induced by the use of the filters and background light rejection under the illumination of white fluorescent lamps. The relevant reduction observed in the dark current (up to 90% at 13 V overvoltage) and the consistent reduction of stray light absorption (up to 90% at 3 V overvoltage with a 900 nm cut-on wavelength long-pass filter) are the main characterization results obtained and shown in this paper.

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

NASA Astrophysics Data System (ADS)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Ultrafast Beam Switching Using Coupled VCSELs

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Goorjian, Peter

2001-01-01

We propose a new approach to performing ultrafast beam switching using two coupled Vertical-Cavity Surface-Emitting Lasers (VCSELs). The strategy is demonstrated by numerical simulation, showing a beam switching of 10 deg at 42 GHz.

Group-III nitride VCSEL structures grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ng, HockMin; Moustakas, Theodore D.

2000-07-01

III-nitride VCSEL structures designed for electron-beam pumping have been grown by molecular beam epitaxy (MBE). The structures consist of a sapphire substrate on which an AlN/GaN distributed Bragg reflector (DBR) with peak reflectance >99% at 402 nm is deposited. The active region consists of a 2-(lambda) cavity with 25 In0.1Ga0.9N/GaN multiquantum wells (MQWs) whose emission coincides with the high reflectance region of the DBR. The thicknesses of the InGaN wells and the GaN barriers are 35 angstrom and 75 angstrom respectively. The top reflector consists of a silver metallic mirror which prevents charging effects during electron-beam pumping. The structure was pumped from the top- side with a cw electron-beam using a modified cathodoluminescence (CL) system mounted on a scanning electron microscope chamber. Light output was collected from the polished sapphire substrate side. Measurements performed at 100 K showed intense emission at 407 nm with narrowing of the linewidth with increasing beam current. A narrow emission linewidth of 0.7 nm was observed indicating the onset of stimulated emission.

Behavioral modeling of VCSELs for high-speed optical interconnects

NASA Astrophysics Data System (ADS)

Szczerba, Krzysztof; Kocot, Chris

2018-02-01

Transition from on-off keying to 4-level pulse amplitude modulation (PAM) in VCSEL based optical interconnects allows for an increase of data rates, at the cost of 4.8 dB sensitivity penalty. The resulting strained link budget creates a need for accurate VCSEL models for driver integrated circuit (IC) design and system level simulations. Rate equation based equivalent circuit models are convenient for the IC design, but system level analysis requires computationally efficient closed form behavioral models based Volterra series and neural networks. In this paper we present and compare these models.

Comparison between high- and zero-contrast gratings as VCSEL mirrors

NASA Astrophysics Data System (ADS)

Liu, Anjin; Zheng, Wanhua; Bimberg, Dieter

2017-04-01

This study presents a comparison between high-contrast gratings (HCGs) and zero-contrast gratings (ZCGs) for high-speed vertical-cavity surface-emitting lasers (VCSELs). Both types of gratings exhibit high reflectivities beyond 99.5% due to the destructive interference at the output plane, but the HCG has a broader high reflectivity band. The HCG has a lower reflection delay time and smaller energy penetration length than the ZCG. The HCG has poorer mode selectivity for the VCSEL than the ZCG. The fabrication of the ZCG is less complex but with tight fabrication tolerances.

Investigation of vertical cavity surface emitting laser dynamics for neuromorphic photonic systems

NASA Astrophysics Data System (ADS)

Hurtado, A.; Schires, K.; Henning, I. D.; Adams, M. J.

2012-03-01

We report an approach based upon vertical cavity surface emitting lasers (VCSELs) to reproduce optically different behaviors exhibited by biological neurons but on a much faster timescale. The technique proposed is based on the polarization switching and nonlinear dynamics induced in a single VCSEL under polarized optical injection. The particular attributes of VCSELs and the simple experimental configuration used in this work offer prospects of fast, reconfigurable processing elements with excellent fan-out and scaling potentials for use in future computational paradigms and artificial neural networks.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

1995-01-01

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector

NASA Astrophysics Data System (ADS)

Cai, Wei; Wang, Wei; Zhu, Bingcheng; Gao, Xumin; Zhu, Guixia; Yuan, Jialei; Wang, Yongjin

2018-01-01

Here, we propose, fabricate and characterize the light manipulation of a suspended-membrane InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED) with a dielectric distributed Bragg reflector (DBR) positioned at the bottom, implemented on a GaN-on-silicon platform. Silicon removal is conducted to obtain the suspended MQW-LED architecture, and back wafer thinning of the epitaxial film is performed to improve the device performance. A 6-pair SiO2/Ta2O5 DBR is deposited on the backside to manipulate the emitted light. The experimental results demonstrate that the bottom dielectric DBR exhibits high reflectivity and distinctly changes the light emission, which are consistent with the performed simulation results. This work represents a significant step towards the realization of inexpensive, electrically driven and simply fabricated GaN VCSELs for potential use in number of applications.

Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter.

PubMed

Lin, Chia-Chi; Kuo, Hao-Chung; Peng, Peng-Chun; Lin, Gong-Ru

2008-03-31

Optically injection-locked single-wavelength gain-switching VCSEL based all-optical converter is demonstrated to generate RZ data at 2.5 Gbit/s with bit-error-rate of 10(-9) under receiving power of -29.3 dBm. A modified rate equation model is established to elucidate the optical injection induced gain-switching and NRZ-to-RZ data conversion in the VCSEL. The peak-to-peak frequency chirp of the VCSEL based NRZ-to-RZ is 4.5 GHz associated with a reduced frequency chirp rate of 178 MHz/ps at input optical NRZ power of -21 dBm, which is almost decreasing by a factor of 1/3 comparing with chirp on the SOA based NRZ-to-RZ converter reported previously. The power penalty of the BER measured back-to-back is about 2 dB from 1 Gbit/s to 2.5 Gbit/s.

Semiconductor lasers driven by self-sustained chaotic electronic oscillators and applications to optical chaos cryptography.

PubMed

Kingni, Sifeu Takougang; Mbé, Jimmi Hervé Talla; Woafo, Paul

2012-09-01

In this work, we numerically study the dynamics of vertical cavity surface emitting laser (VCSEL) firstly when it is driven by Chua's oscillator, secondly in case where it is driven by a broad frequency spectral bandwidth chaotic oscillator developed by Nana et al. [Commun. Nonlinear Sci. Numer. Simul. 14, 2266 (2009)]. We demonstrated that the VCSEL generated robust chaotic dynamics compared to the ones found in VCSEL subject to a sinusoidally modulated current and therefore it is more suitable for chaos encryption techniques. The synchronization characteristics and the communication performances of unidirectional coupled VCSEL driven by the broad frequency spectral bandwidth chaotic oscillators are investigated numerically. The results show that high-quality synchronization and transmission of messages can be realized for suitable system parameters. Chaos shift keying method is successfully applied to encrypt a message at a high bitrate.

Polarization-resolved time-delay signatures of chaos induced by FBG-feedback in VCSEL.

PubMed

Zhong, Zhu-Qiang; Li, Song-Sui; Chan, Sze-Chun; Xia, Guang-Qiong; Wu, Zheng-Mao

2015-06-15

Polarization-resolved chaotic emission intensities from a vertical-cavity surface-emitting laser (VCSEL) subject to feedback from a fiber Bragg grating (FBG) are numerically investigated. Time-delay (TD) signatures of the feedback are examined through various means including self-correlations of intensity time-series of individual polarizations, cross-correlation of intensities time-series between both polarizations, and permutation entropies calculated for the individual polarizations. The results show that the TD signatures can be clearly suppressed by selecting suitable operation parameters such as the feedback strength, FBG bandwidth, and Bragg frequency. Also, in the operational parameter space, numerical maps of TD signatures and effective bandwidths are obtained, which show regions of chaotic signals with both wide bandwidths and weak TD signatures. Finally, by comparing with a VCSEL subject to feedback from a mirror, the VCSEL subject to feedback from the FBG generally shows better concealment of the TD signatures with similar, or even wider, bandwidths.

High-power VCSELs for smart munitions

NASA Astrophysics Data System (ADS)

Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

2006-08-01

The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

High-wafer-yield, high-performance vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Li, Gabriel S.; Yuen, Wupen; Lim, Sui F.; Chang-Hasnain, Constance J.

1996-04-01

Vertical cavity surface emitting lasers (VCSELs) with very low threshold current and voltage of 340 (mu) A and 1.5 V is achieved. The molecular beam epitaxially grown wafers are grown with a highly accurate, low cost and versatile pre-growth calibration technique. One- hundred percent VCSEL wafer yield is obtained. Low threshold current is achieved with a native oxide confined structure with excellent current confinement. Single transverse mode with stable, predetermined polarization direction up to 18 times threshold is also achieved, due to stable index guiding provided by the structure. This is the highest value reported to data for VCSELs. We have established that p-contact annealing in these devices is crucial for low voltage operation, contrary to the general belief. Uniform doping in the mirrors also appears not to be inferior to complicated doping engineering. With these design rules, very low threshold voltage VCSELs are achieved with very simple growth and fabrication steps.

Microfabricated spin exchange relaxation free atomic magnetometer

NASA Astrophysics Data System (ADS)

Griffith, W. Clark; Jimenez-Martinez, Ricardo; Preusser, Jan; Knappe, Svenja; Kitching, John

2009-05-01

Methods first developed at NIST for MEMS-based atomic clocks have been applied to magnetic field sensors. The sensors are built around microfabricated alkali-atom vapor cells integrated with micro-optics and a VCSEL light source. Exceptional magnetic field sensitivities can be achieved in a small volume vapor cell, especially when operated in the spin-exchange relaxation free (SERF) regime. In this technique, magnetic resonance broadening due to spin-exchange collisions is suppressed under conditions of high alkali density and low magnetic fields. We have demonstrated sensitivities better than 100 fT/Hz^1/2 with a millimeter scale SERF sensor.ootnotetextV. Shah, S. Knappe, P.D.D. Schwindt, and J. Kitching, Nature Photonics, 1, 649 (2007). Adding flux concentratorsootnotetextW.C. Griffith, R. Jimenez-Martinez, V. Shah, S. Knappe, and J. Kitching, Appl. Phys. Lett., 94, 023502 (2009). around the vapor cell further improves the sensitivity to 10 fT/Hz^1/2, potentially providing a low power, noncryogenic alternative to SQUID sensors.

Quantum Optoelectronics. Postconference Edition. Organization of the 1993 Photonics Science Topical Meetings Held in Palm Springs, California on March 17 - 19, 1993. Technical Digest Series, Volume 8

DTIC Science & Technology

1993-03-19

Experiments lasing thresholds in sub-half- noises and amplitude squeezing, R. F. Nabiev, E. L. Ginzton micron diameter microcavity VCSELs imply very low...phase noise characteristics of internal and output light of semiconductor laser with dispersive loss element inside the 9:00 am resonator is presented...subsequent emission events, resulting in a remarkable expansion of frequency range for the suppression of photon- number fluctuation noise beyond the inverse

In situ optical time-domain reflectometry (OTDR) for VCSEL-based communication systems

NASA Astrophysics Data System (ADS)

Keeler, Gordon A.; Serkland, Darwin K.; Geib, Kent M.; Klem, John F.; Peake, Gregory M.

2006-02-01

Optical time-domain reflectometry (OTDR) is an effective technique for locating faults in fiber communication links. The fact that most OTDR measurements are performed manually is a significant drawback, because it makes them too costly for use in many short-distance networks and too slow for use in military avionic platforms. Here we describe and demonstrate an automated, low-cost, real-time approach to fault monitoring that can be achieved by integrating OTDR functionality directly into VCSEL-based transceivers. This built-in test capability is straightforward to implement and relevant to both multimode and single mode networks. In-situ OTDR uses the transmitter VCSEL already present in data transceivers. Fault monitoring is performed by emitting a brief optical pulse into the fiber and then turning the VCSEL off. If a fault exists, a portion of the optical pulse returns to the transceiver after a time equal to the round-trip delay through the fiber. In multimode OTDR, the signal is detected by an integrated photodetector, while in single mode OTDR the VCSEL itself can be used as a detector. Modified driver electronics perform the measurement and analysis. We demonstrate that VCSEL-based OTDR has sufficient sensitivity to determine the location of most faults commonly seen in short-haul networks (i.e., the Fresnel reflections from improperly terminated fibers and scattering from raggedly-broken fibers). Results are described for single mode and multimode experiments, at both 850 nm and 1.3 μm. We discuss the resolution and sensitivity that have been achieved, as well as expected limitations for this novel approach to network monitoring.

Long-wavelength VCSELs: Power-efficient answer

NASA Astrophysics Data System (ADS)

Kapon, Eli; Sirbu, Alexei

2009-01-01

The commercialization of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) is gaining new momentum as the telecoms market shifts from long-haul applications to local and access networks. These small, power-efficient devices offer several advantages over traditional edge-emitters.

Wavelength tunable MEMS VCSELs for OCT imaging

NASA Astrophysics Data System (ADS)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa; Semenova, Elizaveta; Hansen, Ole; Yvind, Kresten

2018-02-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.

Development of a high-speed VCSEL OCT system for real-time imaging of conscious patients larynx using a hand-held probe (Conference Presentation)

NASA Astrophysics Data System (ADS)

Rangarajan, Swathi; Chou, Li-Dek; Coughlan, Carolyn; Sharma, Giriraj; Wong, Brian J. F.; Ramalingam, Tirunelveli S.

2016-02-01

Fourier domain optical coherence tomography (FD-OCT) is a noninvasive imaging modality that has previously been used to image the human larynx. However, differences in anatomical geometry and short imaging range of conventional OCT limits its application in a clinical setting. In order to address this issue, we have developed a gradient-index (GRIN) lens rod-based hand-held probe in conjunction with a long imaging range 200 kHz Vertical-Cavity Surface Emitting Lasers (VCSEL) swept-source optical coherence tomography (SS-OCT) system for high speed real-time imaging of the human larynx in an office setting. This hand-held probe is designed to have a long and dynamically tunable working distance to accommodate the differences in anatomical geometry of human test subjects. A nominal working distance (~6 cm) of the probe is selected to have a lateral resolution <100 um within a depth of focus of 6.4 mm, which covers more than half of the 12 mm imaging range of the VCSEL laser. The maximum lateral scanning range of the probe at 6 cm working distance is approximately 8.4 mm, and imaging an area of 8.5 mm by 8.5 mm is accomplished within a second. Using the above system, we will demonstrate real-time cross-sectional OCT imaging of larynx during phonation in vivo in human and ex-vivo in pig vocal folds.

Method for accurate growth of vertical-cavity surface-emitting lasers

DOEpatents

Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

1995-03-14

The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.

MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

NASA Astrophysics Data System (ADS)

Wu, C. Z.; Tsou, Y.; Tsai, C. M.

1999-05-01

Evaluation of producing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure by molecular beam epitaxy (MBE) without resorting to any real-time monitoring technique is reported. Continuous grading of Al xGa 1- xAs between x=0.12 to x=0.92 was simply achieved by changing the Al and Ga cell temperatures in no more than three steps per DBR period. Highly uniform DBR and VCSEL structures were demonstrated with a multi-wafer MBE system. Run-to-run standard deviation of reflectance spectrum center wavelength was 0.5% and 1.4% for VCSEL etalon wavelength.

Double high refractive-index contrast grating VCSEL

NASA Astrophysics Data System (ADS)

Gebski, Marcin; Dems, Maciej; Wasiak, Michał; Sarzała, Robert P.; Lott, J. A.; Czyszanowski, Tomasz

2015-03-01

Distributed Bragg reflectors (DBRs) are typically used as the highly reflecting mirrors of vertical-cavity surface-emitting lasers (VCSELs). In order to provide optical field confinement, oxide apertures are often incorporated in the process of the selective wet oxidation of high aluminum-content DBR layers. This technology has some potential drawbacks such as difficulty in controlling the uniformity of the oxide aperture diameters across a large-diameter (≥ 6 inch) production wafers, high DBR series resistance especially for small diameters below about 5 μm despite elaborate grading and doping schemes, free carrier absorption at longer emission wavelengths in the p-doped DBRs, reduced reliability for oxide apertures placed close to the quantum wells, and low thermal conductivity for transporting heat away from the active region. A prospective alternative mirror is a high refractive index contrast grating (HCG) monolithically integrated with the VCSEL cavity. Two HCG mirrors potentially offer a very compact and simplified VCSEL design although the problems of resistance, heat dissipation, and reliability are not completely solved. We present an analysis of a double HCG 980 nm GaAs-based ultra-thin VCSEL. We analyze the optical confinement of such a structure with a total optical thickness is ~1.0λ including the optical cavity and the two opposing and parallel HCG mirrors.

Compact multiwavelength transmitter module for multimode fiber optic ribbon cable

DOEpatents

Deri, Robert J.; Pocha, Michael D.; Larson, Michael C.; Garrett, Henry E.

2002-01-01

A compact multiwavelength transmitter module for multimode fiber optic ribbon cable, which couples light from an M.times.N array of emitters onto N fibers, where the M wavelength may be distributed across two or more vertical-cavity surface-emitting laser (VCSEL) chips, and combining emitters and multiplexer into a compact package that is compatible with placement on a printed circuit board. A key feature is bringing together two emitter arrays fabricated on different substrates--each array designed for a different wavelength--into close physical proximity. Another key feature is to compactly and efficiently combine the light from two or more clusters of optical emitters, each in a different wavelength band, into a fiber ribbon.

Epitaxial approaches to long-wavelength vertical-cavity lasers

NASA Astrophysics Data System (ADS)

Hall, Eric Michael

The success of short-wavelength (850 nm) vertical-cavity surface-emitting lasers (VCSELs) as low-cost components in fiber optic networks has created a strong demand for similar low-cost devices at longer wavelengths (1.3--1.55mum), which are even more important in telecommunications systems. Extending the success of VCSELs to these longer wavelengths, however, has been slowed by the absence of a mature technology that incorporates all of the necessary components on one substrate without sacrificing the inexpensive and manufacturable nature of VCSELs. Although InAlGaAs active regions on InP substrates have been developed extensively, the other components of vertical-cavity lasers, especially epitaxially-grown distributed Bragg reflectors (DBRs), are less mature on these substrates. This thesis examines the materials and technologies that enable long-wavelength VCSELs to be grown in a single, epitaxial, lattice-matched step on InP substrates. The advantages and shortcomings of each material system are identified and the impact on devices examined. Additionally, processing technologies that rely on the properties of these materials are developed. From these studies, a InP-based, lattice-matched VCSEL design is presented that utilizes AlGaAsSb for high reflectivity DBRs, InAlGaAs for high quality active regions, InP for heat and current spreading, and a materials selective etch for electrical and optical confinement. In short, the design avoids the shortcomings of each material system while emphasizing the advantages. The resulting devices, showing low threshold currents, high efficiencies and powers, and high operating temperatures, not only validate this approach but demonstrate that such lattice-matched, InP-based devices may be a low-cost, manufacturable answer to this long-wavelength VCSEL demand.

A high capacity data centre network: simultaneous 4-PAM data at 20 Gbps and 2 GHz phase modulated RF clock signal over a single VCSEL carrier

NASA Astrophysics Data System (ADS)

Isoe, G. M.; Wassin, S.; Gamatham, R. R. G.; Leitch, A. W. R.; Gibbon, T. B.

2017-11-01

Optical fibre communication technologies are playing important roles in data centre networks (DCNs). Techniques for increasing capacity and flexibility for the inter-rack/pod communications in data centres have drawn remarkable attention in recent years. In this work, we propose a low complexity, reliable, alternative technique for increasing DCN capacity and flexibility through multi-signal modulation onto a single mode VCSEL carrier. A 20 Gbps 4-PAM data signal is directly modulated on a single mode 10 GHz bandwidth VCSEL carrier at 1310 nm, therefore, doubling the network bit rate. Carrier spectral efficiency is further maximized by modulating its phase attribute with a 2 GHz reference frequency (RF) clock signal. We, therefore, simultaneously transmit a 20 Gbps 4-PAM data signal and a phase modulated 2 GHz RF signal using a single mode 10 GHz bandwidth VCSEL carrier. It is the first time a single mode 10 GHz bandwidth VCSEL carrier is reported to simultaneously transmit a directly modulated 4-PAM data signal and a phase modulated RF clock signal. A receiver sensitivity of -10. 52 dBm was attained for a 20 Gbps 4-PAM VCSEL transmission. The 2 GHz phase modulated RF clock signal introduced a power budget penalty of 0.21 dB. Simultaneous distribution of both data and timing signals over shared infrastructure significantly increases the aggregated data rate at different optical network units within the DCN, without expensive optics investment. We further demonstrate on the design of a software-defined digital signal processing assisted receiver to efficiently recover the transmitted signal without employing costly receiver hardware.

Novel Ruggedized Packaging Technology for VCSELs

DTIC Science & Technology

2017-03-01

Novel Ruggedized Packaging Technology for VCSELs Charlie Kuznia ckuznia@ultracomm-inc.com Ultra Communications, Inc. Vista, CA, USA, 92081...n ac hieve l ow-power, E MI-immune links within hi gh-performance m ilitary computing an d sensor systems. Figure 1. Chip-scale-packaging of

VCSEL-based optical transceiver module operating at 25 Gb/s and using a single CMOS IC

NASA Astrophysics Data System (ADS)

Afriat, Gil; Horwitz, Lior; Lazar, Dror; Issachar, Assaf; Pogrebinsky, Alexander; Ran, Adee; Shoor, Ehud; Bar, Roi; Saba, Rushdy

2012-01-01

We present here a low cost, small form factor, optical transceiver module composed of a CMOS IC transceiver, 850 nm emission wavelength VCSEL modulated at 25 Gb/s, and an InGaAs/InP PIN Photo Diode (PD). The transceiver IC is fabricated in a standard 28 nm CMOS process and integrates the analog circuits interfacing the VCSEL and PD, namely the VCSEL driver and Transimpedance Amplifier (TIA), as well as all other required transmitter and receiver circuits like Phase Locked Loop (PLL), Post Amplifier and Clock & Data Recovery (CDR). The transceiver module couples into a 62.5/125 um multi-mode (OM1) TX/RX fiber pair via a low cost plastic cover realizing the transmitter and receiver lens systems and demonstrates BER < 10-12 at the 25 Gb/s data rate over a distance of 3 meters. Using a 50/125 um laser optimized multi-mode fiber (OM3), the same performance was achieved over a distance of 30 meters.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, W.W.; Choquette, K.D.; Gourley, P.L.

1998-01-27

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof are disclosed. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n {>=} 2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n {>=} 2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum. 12 figs.

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

NASA Astrophysics Data System (ADS)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

DOEpatents

Chow, Weng W.; Choquette, Kent D.; Gourley, Paul L.

1998-01-01

A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.

LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array

DOE PAGES

Zeng, Z.; Zhang, T.; Wang, G.; ...

2017-02-28

Here, a High-speed and low-power VCSEL driver is an important component of the Versatile Link for the high-luminosity LHC (HL-LHC) experiments. A compact low-power radiation-hard 4 × 10 Gb/s VCSEL driver array (LDQ10) has been developed in 65 nm CMOS technology. Each channel in LDQ10 can provide a modulation current up to 8 mA and bias current up to 12 mA. Edge pre-emphasis is employed to compensate for the bandwidth limitations due to parasitic and the turn-on delay of VCSEL devices. LDQ10 occupies a chip area of 1900 μm × 1700 μm and consumes 130 mW power for typical currentmore » settings. The modulation amplitude degrades less than 5% after 300 Mrad total ionizing dose. LDQ10 can be directly wire-bonded to the VCSEL array and it is a suitable candidate for the Versatile Link.« less

PAM-4 Signaling over VCSELs with 0.13µm CMOS Chip Technology

NASA Astrophysics Data System (ADS)

Cunningham, J. E.; Beckman, D.; Zheng, Xuezhe; Huang, Dawei; Sze, T.; Krishnamoorthy, A. V.

2006-12-01

We present results for VCSEL based links operating PAM-4 signaling using a commercial 0.13µm CMOS technology. We perform a complete link analysis of the Bit Error Rate, Q factor, random and deterministic jitter by measuring waterfall curves versus margins in time and amplitude. We demonstrate that VCSEL based PAM 4 can match or even improve performance over binary signaling under conditions of a bandwidth limited, 100meter multi-mode optical link at 5Gbps. We present the first sensitivity measurements for optical PAM-4 and compare it with binary signaling. Measured benefits are reconciled with information theory predictions.

PAM-4 Signaling over VCSELs with 0.13microm CMOS Chip Technology.

PubMed

Cunningham, J E; Beckman, D; Zheng, Xuezhe; Huang, Dawei; Sze, T; Krishnamoorthy, A V

2006-12-11

We present results for VCSEL based links operating PAM-4 signaling using a commercial 0.13microm CMOS technology. We perform a complete link analysis of the Bit Error Rate, Q factor, random and deterministic jitter by measuring waterfall curves versus margins in time and amplitude. We demonstrate that VCSEL based PAM-4 can match or even improve performance over binary signaling under conditions of a bandwidth limited, 100meter multi-mode optical link at 5Gbps. We present the first sensitivity measurements for optical PAM-4 and compare it with binary signaling. Measured benefits are reconciled with information theory predictions.

GBLD10+: a compact low-power 10 Gb/s VCSEL driver

DOE PAGES

Zhang, T.; Kulis, S.; Gui, P.; ...

2016-01-13

We report the design and implementation of the GBLD10+, a low-power 10 Gb/s VCSEL driver for High Energy Physics (HEP) applications. With new circuit techniques, the driver consumes only 31 mW and occupies a small area of 400 μm × 1750 μm including the IO PADs and sealrings. These characteristics allow for multiple GBLD10+ ICs to be assembled side by side in a compact module, with each one directly wire bonded to one VCSEL diode. Finally, this makes the GBLD10+ a suitable candidate for the Versatile Link PLUS (VL +) project, offering flexibility in configuring multiple transmitters and receivers.

VCSELs for exascale computing, computer farms, and green photonics

NASA Astrophysics Data System (ADS)

Hofmann, Werner; Moser, Philip; Wolf, Philip; Larisch, Gunter; Li, Hui; Li, Wei; Lott, James; Bimberg, Dieter

2012-11-01

The bandwidth-induced communication bottleneck due to the intrinsic limitations of metal interconnects is inhibiting the performance and environmental friendliness of todaýs supercomputers, data centers, and in fact all other modern electrically interconnected and interoperable networks such as data farms and "cloud" fabrics. The same is true for systems of optical interconnects (OIs), where even when the metal interconnects are replaced with OIs the systems remain limited by bandwidth, physical size, and most critically the power consumption and lifecycle operating costs. Vertical-cavity surface-emitting lasers (VCSELs) are ideally suited to solve this dilemma. Global communication providers like Google Inc., Intel Inc., HP Inc., and IBM Inc. are now producing optical interconnects based on VCSELs. The optimal bandwidth per link may be analyzed by by using Amdahĺs Law and depends on the architecture of the data center and the performance of the servers within the data center. According to Google Inc., a bandwidth of 40 Gb/s has to be accommodated in the future. IBM Inc. demands 80 Tbps interconnects between solitary server chips in 2020. We recently realized ultrahigh bit rate VCSELs up to 49 Gb/s suited for such optical interconnects emitting at 980 nm. These devices show error-free transmission at temperatures up to 155°C and operate beyond 200°C. Single channel data-rates of 40 Gb/s were achieved up to 75°C. Record high energy efficiencies close to 50 fJ/bit were demonstrated for VCSELs emitting at 850 nm. Our devices are fabricated using a full three-inch wafer process, and the apertures were formed by in-situ controlled selective wet oxidation using stainless steel-based vacuum equipment of our own design. assembly, and operation. All device data are measured, recorded, and evaluated by our proprietary fully automated wafer mapping probe station. The bandwidth density of our present devices is expected to be scalable from about 100 Gbps/mm² to a physical limit of roughly 15 Tbps/mm² based on the current 12.5 Gb/s VCSEL technology. Still more energy-efficient and smaller volume laser diode devices dissipating less heat are mandatory for further up scaling of the bandwidth. Novel metal-clad VCSELs enable a reduction of the device's footprint for potentially ultrashort range interconnects by 1 to 2 orders of magnitude compared to conventional VCSELs thus enabling a similar increase of device density and bandwidth.

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

NASA Technical Reports Server (NTRS)

Savich, Gregory R.; Simons, Rainee N.

2006-01-01

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Geels, Randall Scott

The theory, design, fabrication, and testing of vertical-cavity surface-emitting lasers (VCSELs) is explored in depth. The design of the distributed Bragg reflector (DBR) mirrors is thoroughly treated and both analytic and numerical approaches for computing the reflectivity are covered. The electrical properties of the DBR mirrors are also considered and graded interfaces are found to be critical in reducing the series voltage drop in the mirrors. Thickness variations due to growth rate uncertainties are considered and the permissible thickness inaccuracies are discussed. Layer thickness variations of several percent can be tolerated without large changes in the threshold current. The growth of VCSELs by molecular beam epitaxy (MBE) is described in detail as is the device processing technology for broad area as well as small area devices. Results from numerous devices are reported. Broad area in-plane lasers were used to characterize the material and determine the internal parameters. Broad area VCSELs were fabricated to determine the characteristics of the VCSEL cavity. Small area VCSELs were fabricated and extensively tested. Measured and derived parameters from small area devices include: threshold current (~0.7 mA), peak output power (>3 mW), maximum operation temperature (>110^ circC), output power at 100^ circC (~0.4 mW), and linewidth (85 MHz). The near field, far field, and polarization characteristics were also measured.

Tunable vertical cavity surface emitting lasers for use in the near infrared biological window

NASA Astrophysics Data System (ADS)

Kitsmiller, Vincent J.; Dummer, Matthew; Johnson, Klein; O'Sullivan, Thomas D.

2018-02-01

We present a near-infrared tunable vertical cavity surface emitting laser (VCSEL) based upon a unique electrothermally tunable microelectromechanical systems (MEMS) topside mirror designed for tissue imaging and sensing. At room temperature, the laser is tunable from 769-782nm with single mode CW output and a peak output power of 1.3mW. We show that the tunable VCSEL is suitable for use in frequency domain diffuse optical spectroscopy by measuring the optical properties of a tissue-simulating phantom over the tunable range. These results indicate that tunable VCSELs may be an attractive choice to enable high spectral resolution optical sensing in a wearable format.

1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

NASA Astrophysics Data System (ADS)

Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

2003-04-01

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

PubMed

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

Photopumped infrared vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Hadji, E.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

1996-04-01

The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K.

DBR, Sub-wavelength grating, and Photonic crystal slab Fabry-Perot cavity design using phase analysis by FDTD.

PubMed

Kim, Jae Hwan Eric; Chrostowski, Lukas; Bisaillon, Eric; Plant, David V

2007-08-06

We demonstrate a Finite-Difference Time-Domain (FDTD) phase methodology to estimate resonant wavelengths in Fabry-Perot (FP) cavity structures. We validate the phase method in a conventional Vertical-Cavity Surface-Emitting Laser (VCSEL) structure using a transfer-matrix method, and compare results with a FDTD reflectance method. We extend this approach to a Sub-Wavelength Grating (SWG) and a Photonic Crystal (Phc) slab, either of which may replace one of the Distributed Bragg Reflectors (DBRs) in the VCSEL, and predict resonant conditions with varying lithographic parameters. Finally, we compare the resonant tunabilities of three different VCSEL structures, taking quality factors into account.

Depth-encoded all-fiber swept source polarization sensitive OCT

PubMed Central

Wang, Zhao; Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Lee, ByungKun; Choi, WooJhon; Potsaid, Benjamin; Liu, Jonathan; Jayaraman, Vijaysekhar; Cable, Alex; Kraus, Martin F.; Liang, Kaicheng; Hornegger, Joachim; Fujimoto, James G.

2014-01-01

Polarization sensitive optical coherence tomography (PS-OCT) is a functional extension of conventional OCT and can assess depth-resolved tissue birefringence in addition to intensity. Most existing PS-OCT systems are relatively complex and their clinical translation remains difficult. We present a simple and robust all-fiber PS-OCT system based on swept source technology and polarization depth-encoding. Polarization multiplexing was achieved using a polarization maintaining fiber. Polarization sensitive signals were detected using fiber based polarization beam splitters and polarization controllers were used to remove the polarization ambiguity. A simplified post-processing algorithm was proposed for speckle noise reduction relaxing the demand for phase stability. We demonstrated systems design for both ophthalmic and catheter-based PS-OCT. For ophthalmic imaging, we used an optical clock frequency doubling method to extend the imaging range of a commercially available short cavity light source to improve polarization depth-encoding. For catheter based imaging, we demonstrated 200 kHz PS-OCT imaging using a MEMS-tunable vertical cavity surface emitting laser (VCSEL) and a high speed micromotor imaging catheter. The system was demonstrated in human retina, finger and lip imaging, as well as ex vivo swine esophagus and cardiovascular imaging. The all-fiber PS-OCT is easier to implement and maintain compared to previous PS-OCT systems and can be more easily translated to clinical applications due to its robust design. PMID:25401008

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs

NASA Astrophysics Data System (ADS)

Hatakeyama, H.; Anan, T.; Akagawa, T.; Fukatsu, K.; Suzuki, N.; Tokutome, K.; Tsuji, M.

2009-02-01

In this paper, we describe high temperature operation of high speed 1.1μm-range oxide-confined vertical-cavity surfaceemitting lasers (VCSELs) for optical interconnection applications. For achieving high speed of over 25 Gbit/s under a high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs via accelerated life tests. The result showed extremely long MTTF lifetime of about 10 thousand hours under an ambient temperature of 150°C and a bias current of about 19 kA/cm2, a reliability that either equals or surpasses that of conventional 850-nm VCSELs with 10 Gbit/s. Moreover, we revealed a typical failure mode of the device; the result of analysis indicated that the failure was caused by <110> dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.

Molecular beam epitaxy of lead salt-based vertical cavity surface emitting lasers for the 4-6 μm spectral region

NASA Astrophysics Data System (ADS)

Springholz, G.; Schwarzl, T.; Heiß, W.; Aigle, M.; Pascher, H.

2001-07-01

IV-VI semiconductor vertical cavity surface emitting quantum well lasers (VCSELs) for the 4-6 μm spectral region were grown by molecular beam epitaxy on BaF 2 (1 1 1) substrates. The VCSEL structures consist of two Bragg mirrors with an active cavity region consisting of PbTe quantum wells inserted into Pb 1- xEu xTe as barrier material. For the Bragg mirrors, two different layer structures were investigated, namely, (A) the use of nearly lattice-matched ternary Pb 1- xEu xTe layers with Eu contents alternating between 1% and 6%, and (B) the use of EuTe and Pb 1- xEu xTe ( x=6%) as bilayer combination. The latter yields a much higher refractive index contrast but features a lattice-mismatch of about 2%. VCSEL structures of each Bragg mirror type were fabricated and optically pumped laser emission was obtained at 6.07 μm for VCSELs of type A and at 4.8 μm for that of type B with a maximum operation temperature of 85 K.

Study on VCSEL laser heating chip in nuclear magnetic resonance gyroscope

NASA Astrophysics Data System (ADS)

Liang, Xiaoyang; Zhou, Binquan; Wu, Wenfeng; Jia, Yuchen; Wang, Jing

2017-10-01

In recent years, atomic gyroscope has become an important direction of inertial navigation. Nuclear magnetic resonance gyroscope has a stronger advantage in the miniaturization of the size. In atomic gyroscope, the lasers are indispensable devices which has an important effect on the improvement of the gyroscope performance. The frequency stability of the VCSEL lasers requires high precision control of temperature. However, the heating current of the laser will definitely bring in the magnetic field, and the sensitive device, alkali vapor cell, is very sensitive to the magnetic field, so that the metal pattern of the heating chip should be designed ingeniously to eliminate the magnetic field introduced by the heating current. In this paper, a heating chip was fabricated by MEMS process, i.e. depositing platinum on semiconductor substrates. Platinum has long been considered as a good resistance material used for measuring temperature The VCSEL laser chip is fixed in the center of the heating chip. The thermometer resistor measures the temperature of the heating chip, which can be considered as the same temperature of the VCSEL laser chip, by turning the temperature signal into voltage signal. The FPGA chip is used as a micro controller, and combined with PID control algorithm constitute a closed loop control circuit. The voltage applied to the heating resistor wire is modified to achieve the temperature control of the VCSEL laser. In this way, the laser frequency can be controlled stably and easily. Ultimately, the temperature stability can be achieved better than 100mK.

50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range

NASA Astrophysics Data System (ADS)

Agustin, M.; Ledentsov, N.; Kropp, J.-R.; Shchukin, V. A.; Kalosha, V. P.; Chi, K. L.; Khan, Z.; Shi, J. W.; Ledentsov, N. N.

2018-02-01

The development of advanced OM5 wideband multimode fiber (WBMMF) allowing high modal bandwidth in the spectral range 840-950 nm motivates research in vertical-cavity-surface-emitting-lasers (VCSELs) at wavelengths beyond the previously accepted for short reach communications. Thus, short wavelength division multiplexing (SWDM) solutions can be implemented as a strategy to satisfy the increasing demand of data rate in datacenter environments. As an alternative solution to 850 nm parallel links, four wavelengths with 30 nm separation between 850 nm and 940 nm can be multiplexed on a single OM5-MMF, so the number of fibers deployed is reduced by a factor of four. In this paper high speed transmission is studied for VCSELs in the 850 nm - 950 nm range. The devices had a modulating bandwidth of 26-28 GHz. 50 Gb/s non-return-to-zero (NRZ) operation is demonstrated at each wavelength without preemphasis and equalization, with bit-error-rate (BER) below 7% forward error correction (FEC) threshold. Furthermore, the use of single-mode VCSELs (SM-VCSELs) as a way to mitigate the effects of chromatic dispersions in order to extend the maximum transmission distance over OM5 is explored. Analysis of loss as a function of wavelength in OM5 fiber is also performed. Significant decrease is observed, from 2.2 dB/km to less than 1.7 dB/km at 910 nm wavelength of the VCSEL.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Intra-Chip Free-Space Optical Interconnect: System, Device, Integration and Prototyping

NASA Astrophysics Data System (ADS)

Ciftcioglu, Berkehan

Currently, on-chip optical interconnect schemes already proposed utilize circuit switching using wavelength division multiplexing (WDM) or all-optical packet switching, all based on planar optical waveguides and related photonic devices such as microrings. These proposed approaches pose significant challenges in latency, energy efficiency, integration, and scalability. This thesis presents a new alternative approach by utilizing free-space optics. This 3-D integrated intra-chip free-space optical interconnect (FSOI) leverages mature photonic devices such as integrated lasers, photodiodes, microlenses and mirrors. It takes full advantages of the latest developments in 3-D integration technologies. This interconnect system provides point-to-point free-space optical links between any two communication nodes to construct an all-to-all intra-chip communication network with little or no arbitration. Therefore, it has significant networking advantages over conventional electrical and waveguide-based optical interconnects. An FSOI system is evaluated based on the real device parameters, predictive technology models and International Roadmap of Semiconductor's predictions. A single FSOI link achieves 10-Gbps data rate with 0.5-pJ/bit energy efficiency and less than 10--12 bit-error-rate (BER). A system using this individual link can provide scalability up to 36 nodes, providing 10-Tbps aggregate bandwidth. A comparison analysis performed between a WDM-based waveguide interconnect system and the proposed FSOI system shows that FSOI achieves better energy efficiency than the WDM one as the technology scales. Similarly, network simulation on a 16-core microprocessor using the proposed FSOI system instead of mesh networks has been shown to speed up the system by 12% and reduce the energy consumption by 33%. As a part of the development of a 3-D integrated FSOI system, operating at 850 nm with a 10-Gbps data rate per optical link, the photonics devices and optical components are individually designed and fabricated. The photodiodes (PDs) are designed to have large area for efficient light coupling and low capacitance to achieve large bandwidth, while achieving reasonably high responsivity. A metal-semiconductor-metal (MSM) structure is chosen over p-i-n ones to reduce parasitic capacitance per area, to allow less stringent microlens-to-PD alignment for efficient light coupling with a large bandwidth. A novel MSM germanium PD is implemented using an amorphous silicon (a-Si) layer on top of the undoped germanium substrate, serving as a barrier enhancement layer, mitigating the low Schottky barrier height for holes due to fermi level pinning and a surface passivation layer, preventing charge accumulation and image force lowering of the barrier. Therefore, the dark current is reduced and low-frequency gain is eliminated. The PDs achieve a 13-GHz bandwidth with a 0.315-A/W responsivity and a 1.7-nAmum² dark current density. The microlenses are fabricated on a fused silica substrate based on the photoresist melt-and-reflow technique, followed by dry etching into fused silica substrate. The measured focal length of a 220-mum aperture size microlens is 350-mum away from the backside of the substrate. The vertical-cavity surface-emitting lasers (VCSELs) are fabricated on a commercial molecular beam epitaxially (MBE) grown GaAs wafer. The fabricated 8-mum aperture size VCSEL can achieve 0.65-mW optical power at a 1.5-mA forward bias current with a threshold current of 0.48 mA and a 0.67-A/W slope efficiency. Three prototypes are implemented via integrating the individually fabricated components using non-conductive epoxy and wirebonding. The first prototype, built on a printed circuit board (PCB) using commercial VCSEL arrays, achieves a 5-dB transmission loss and less than -30-dB crosstalk at 1-cm distance with a small-signal bandwidth of 10 GHz, limited by the VCSEL. The second board-level prototype uses all fabricated components integrated on a PCB. The prototype achieves a 9-dB transmission loss at 3-cm distance and a 4.4-GHz bandwidth. The chip-level prototype is built on a germanium carrier with integrated MSM Ge PDs, microlenses on fused silica and VCSEL chip on GaAs substrates. The prototype achieves 4-dB transmission loss at 1 cm and 3.3-GHz bandwidth, limited by commercial VCSEL bandwidth. (Abstract shortened by UMI.)

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

PubMed

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Park, Jaegyu; Kim, Sanggi

2015-06-10

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.

Recent progress in 1.3- and 1.5-μm waveband wafer-fused VCSELs

NASA Astrophysics Data System (ADS)

Mereuta, A.; Caliman, A.; Sirbu, A.; Iakovlev, V.; Ellafi, D.; Rudra, A.; Wolf, P.; Bimberg, D.; Kapon, E.

2016-11-01

The progress of 1.3- and 1.5-μm waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80°C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.

Compactly packaged monolithic four-wavelength VCSEL array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport.

PubMed

Lee, Eun-Gu; Mun, Sil-Gu; Lee, Sang Soo; Lee, Jyung Chan; Lee, Jong Hyun

2015-01-12

We report a cost-effective transmitter optical sub-assembly using a monolithic four-wavelength vertical-cavity surface-emitting laser (VCSEL) array with 100-GHz wavelength spacing for future-proof mobile fronthaul transport using the data rate of common public radio interface option 6. The wavelength spacing is achieved using selectively etched cavity control layers and fine current adjustment. The differences in operating current and output power for maintaining the wavelength spacing of four VCSELs are <1.4 mA and <1 dB, respectively. Stable operation performance without mode hopping is observed, and error-free transmission under direct modulation is demonstrated over a 20-km single-mode fiber without any dispersion-compensation techniques.

Ultrafast Laser Beam Switching and Pulse Train Generation by Using Coupled Vertical-Cavity, Surface-Emitting Lasers (VCSELS)

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor); Ning, Cun-Zheng (Inventor)

2005-01-01

Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.

Vertical-cavity surface-emitting lasers - Design, growth, fabrication, characterization

NASA Astrophysics Data System (ADS)

Jewell, Jack L.; Lee, Y. H.; Harbison, J. P.; Scherer, A.; Florez, L. T.

1991-06-01

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 microns to above 50 microns. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching; packaging and arrays; and ultrasmall devices.

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

NASA Astrophysics Data System (ADS)

Forman, Charles A.; Lee, SeungGeun; Young, Erin C.; Kearns, Jared A.; Cohen, Daniel A.; Leonard, John T.; Margalith, Tal; DenBaars, Steven P.; Nakamura, Shuji

2018-03-01

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture, a tunnel junction intracavity contact, and a dual dielectric distributed Bragg reflector design. The reported VCSEL has 2 quantum wells, with a 14 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 23 λ total cavity thickness. The thermal performance was improved by increasing the cavity length and using Au-In solid-liquid interdiffusion bonding, which led to lasing under CW operation for over 20 min. Lasing wavelengths under pulsed operation were observed at 406 nm, 412 nm, and 419 nm. Only the latter two modes appeared under CW operation due to the redshifted gain at higher temperatures. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 140 μW and 700 μW, respectively. The fundamental transverse mode was observed without the presence of filamentary lasing. The thermal impedance was estimated to be ˜1400 °C/W for a 6 μm aperture 23 λ VCSEL.

Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1993-12-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. Concentrtion was on epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer involves creating a nonuniform substrate surface temperature across the wafer during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate temperature. Growth is investigated with the use of a patterned spacer (either a Ga or Si substrate) placed in-between the substrate and its heater. The temperature distribution on such wafers is used to guide our experiments. A reflectivity measurement apparatus that is capable of mapping a 2 in. wafer with a 100 microns diameter resolution was built for diagnosing our wafers. In this first six-month report, our calculations, the various experimental results, and a discussion on future directions are presented.

Joint CPT and N resonance in compact atomic time standards

NASA Astrophysics Data System (ADS)

Crescimanno, Michael; Hohensee, Michael; Xiao, Yanhong; Phillips, David; Walsworth, Ron

2008-05-01

Currently development efforts towards small, low power atomic time standards use current-modulated VCSELs to generate phase-coherent optical sidebands that interrogate the hyperfine structure of alkali atoms such as rubidium. We describe and use a modified four-level quantum optics model to study the optimal operating regime of the joint CPT- and N-resonance clock. Resonant and non-resonant light shifts as well as modulation comb detuning effects play a key role in determining the optimal operating point of such clocks. We further show that our model is in good agreement with experimental tests performed using Rb-87 vapor cells.

2.49 GHz low phase-noise optoelectronic oscillator using 1.55μm VCSEL for avionics and aerospace applications

NASA Astrophysics Data System (ADS)

Hayat, Ahmad; Bacou, Alexandre; Rissons, Angelique; Mollier, Jean-Claude

2009-02-01

We present here a 1.55 μm single mode Vertical-Cavity Surface-Emitting Laser (VCSEL) based low phasenoise ring optoelectronic (OEO) oscillator operating at 2.49 GHz for aerospace, avionics and embedded systems applications. Experiments using optical fibers of different lengths have been carried out to obtain optimal results. A phase-noise measurement of -107 dBc/Hz at an offset of 10 kHz from the carrier is obtained. A 3-dB linewidth of 16 Hz for this oscillator signal has been measured. An analysis of lateral mode spacing or Free Spectral Range (FSR) as a function of fiber length has been carried out. A parametric comparison with DFB Laser-based and multimode VCSEL-based opto-electronic oscillators is also presented.

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in futuremore » optical systems.« less

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

High Luminescence Efficiency from GaAsN Layers Grown by MBE with RF Nitrogen Plasma Source

DTIC Science & Technology

2002-01-01

is the goal for applications in fiber optic communication systems. 1.3 micron edge- emitting lasers and VCSELs have been recently demonstrated by...GaAsN layers. CONCLUSIONS Molecular beam epitaxial growth of GaAsj_,N, layers has been studied as a function of nitrogen content and growth regimes. We...obtained are important for further improving the characteristics of InGaAsN lasers emitting at 1.3 micron. INTRODUCTION Group-Ill nitride semiconductors

Wavelength shift in vertical cavity laser arrays on a patterned substrate

NASA Astrophysics Data System (ADS)

Eng, L. E.; Bacher, K.; Yuen, W.; Larson, M.; Ding, G.; Harris, J. S., Jr.; Chang-Hasnain, C. J.

1995-03-01

The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al(0.2)Ga(0.8)As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array.

Coupled-cavity surface-emitting lasers: spectral and polarization threshold characteristics and electrooptic switching.

PubMed

Panajotov, Krassimir P; Zujewski, Mateusz; Thienpont, Hugo

2010-12-20

We study spectral and polarization threshold characteristics of coupled-cavity Vertical-Surface-Emitting Lasers (CC-VCSEL) on the base of a simple matrix approach. We show that strong wavelength discrimination can be achieved in CC-VCSELs by slightly detuning the cavities. However, polarization discrimination is not provided by the coupled-cavity design. We also consider the case of reverse-biasing one of the cavities, i.e. using it as a modulator via linear and/or quadratic electrooptic effect. Such a CC-VCSEL can act as a voltage-controlled polarization or wavelength switching device that is decoupled from the laser design and can be optimized for high modulation speed. We also show that using QD stack instead of quantum wells in the top cavity would lead to significant reduction of the driving electrical field.

Trade-offs between lens complexity and real estate utilization in a free-space multichip global interconnection module.

PubMed

Milojkovic, Predrag; Christensen, Marc P; Haney, Michael W

2006-07-01

The FAST-Net (Free-space Accelerator for Switching Terabit Networks) concept uses an array of wide-field-of-view imaging lenses to realize a high-density shuffle interconnect pattern across an array of smart-pixel integrated circuits. To simplify the optics we evaluated the efficiency gained in replacing spherical surfaces with aspherical surfaces by exploiting the large disparity between narrow vertical cavity surface emitting laser (VCSEL) beams and the wide field of view of the imaging optics. We then analyzed trade-offs between lens complexity and chip real estate utilization and determined that there exists an optimal numerical aperture for VCSELs that maximizes their area density. The results provide a general framework for the design of wide-field-of-view free-space interconnection systems that incorporate high-density VCSEL arrays.

Oxide-apertured VCSEL with short period superlattice

NASA Astrophysics Data System (ADS)

Li, Lin; Zhong, Jingchang; Zhang, Yongming; Su, Wei; Zhao, Yingjie; Yan, Changling; Hao, Yongqin; Jiang, Xiaoguang

2004-12-01

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1)As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2 deg. off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 (Celsius degree) and the threshold current increased slowly with the increase of temperature.

Multiple wavelength tunable surface-emitting laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie J.; Harbison, J. P.; Zah, Chung-En; Maeda, M. W.; Florez, L. T.; Stoffel, N. G.; Lee, Tien-Pei

1991-06-01

Techniques to achieve wavelength multiplexing and tuning capabilities in vertical-cavity surface-emitting lasers (VCSELs) are described, and experimental results are given. The authors obtained 140 unique, uniformly separated, single-mode wavelength emissions from a 7 x 20 VCSEL array. Large total wavelength span (about 430 A) and small wavelength separation (about 3 A) are obtained simultaneously with uncompromised laser performance. All 140 lasers have nearly the same threshold currents, voltages, and resistances. Wavelength tuning is obtained by using a three-mirror coupled-cavity configuration. The three-mirror laser is a two-terminal device and requires only one top contact. Discrete tuning with a range as large as 61 A is achieved with a small change in drive current of only 10.5 mA. The VCSEL output power variation is within 5 dB throughout the entire tuning range.

Monolithic integration of multiple wavelength vertical-cavity surface-emitting lasers by mask molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Ogura, Ichiro; Sugimoto, Yoshimasa; Kasahara, Kenichi

1995-05-01

The monolithic incorporation and performance of vertical-cavity surface-emitting lasers (VCSELs) emitting at two distinct wavelengths, which were suited for application to wavelength division multiplexing (WDM) systems were reported. The monolithic integration of two-wavelength VCSEL arrays was achieved by using mask molecular beam epitaxy. This method can generate arrays that have the desired integration area size and wavelength separation.

Optical interconnects based on VCSELs and low-loss silicon photonics

NASA Astrophysics Data System (ADS)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Diode-Laser Absorption Sensor for Line-of-Sight Gas Temperature Distributions

NASA Astrophysics Data System (ADS)

Sanders, Scott T.; Wang, Jian; Jeffries, Jay B.; Hanson, Ronald K.

2001-08-01

Line-of-sight diode-laser absorption techniques have been extended to enable temperature measurements in nonuniform-property flows. The sensing strategy for such flows exploits the broad wavelength-scanning abilities ( >1.7 nm ~ 30 cm-1 ) of a vertical cavity surface-emitting laser (VCSEL) to interrogate multiple absorption transitions along a single line of sight. To demonstrate the strategy, a VCSEL-based sensor for oxygen gas temperature distributions was developed. A VCSEL beam was directed through paths containing atmospheric-pressure air with known (and relatively simple) temperature distributions in the 200 -700 K range. The VCSEL was scanned over ten transitions in the R branch of the oxygen A band near 760 nm and optionally over six transitions in the P branch. Temperature distribution information can be inferred from these scans because the line strength of each probed transition has a unique temperature dependence; the measurement accuracy and resolution depend on the details of this temperature dependence and on the total number of lines scanned. The performance of the sensing strategy can be optimized and predicted theoretically. Because the sensor exhibits a fast time response ( ~30 ms) and can be adapted to probe a variety of species over a range of temperatures and pressures, it shows promise for industrial application.

Trimethylamine alane for low-pressure MOVPE growth of AlGaAs-based materials and device structures

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Bryan, R. P.; Jones, E. D.; Biefield, R. M.; Olbright, G. R.

The use of trimethylamine alane (TMAA1) as an alternative to trimethylaluminum (TMA1) for low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films as well as complex optoelectronic device structures has been studied in detail. AlGaAs layers were grown in a horizontal reaction chamber at 20 - 110 mbar with growth temperatures in the range 650 C less than or equal to T(sub G) less than or equal to 750 C. Wafer thickness uniformity is strongly dependent on growth pressure, and is acceptable only for the highest linear flow velocities. The 12 K photoluminescence (PL) spectra of AlGaAs layers grown using TMAA1 and TEGa exhibit uniformly intense and narrow bound-exciton emission throughout the growth temperature range investigated. To assess the viability of this new source for the low-pressure OMVPE growth of advanced optoelectronic devices, several optically-pumped vertical-cavity surface-emitting laser (VCSEL) structures were grown using TMAA1 extensively. Room temperature lasing at 850 nm was reproducibly obtained from the VCSEL structures, with a threshold pumping power comparable to similar structures grown by molecular beam epitaxy in our laboratories.

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

Low power laser driver design in 28nm CMOS for on-chip and chip-to-chip optical interconnect

NASA Astrophysics Data System (ADS)

Belfiore, Guido; Szilagyi, Laszlo; Henker, Ronny; Ellinger, Frank

2015-09-01

This paper discusses the challenges and the trade-offs in the design of laser drivers for very-short distance optical communications. A prototype integrated circuit is designed and fabricated in 28 nm super-low-power CMOS technology. The power consumption of the transmitter is 17.2 mW excluding the VCSEL that in our test has a DC power consumption of 10 mW. The active area of the driver is only 0.0045 mm2. The driver can achieve an error-free (BER < 10 -12) electrical data-rate of 25 Gbit/s using a pseudo random bit sequence of 27 -1. When the driver is connected to the VCSEL module an open optical eye is reported at 15 Gbit/s. In the tested bias point the VCSEL module has a measured bandwidth of 10.7 GHz.

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications

NASA Astrophysics Data System (ADS)

Kumari, Sulakshna; Gustavsson, Johan S.; Wang, Ruijun; Haglund, Emanuel P.; Westbergh, Petter; Sanchez, Dorian; Haglund, Erik; Haglund, Åsa; Bengtsson, Jörgen; Le Thomas, Nicolas; Roelkens, Gunther; Larsson, Anders; Baets, Roel

2015-02-01

We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).

Portable atomic frequency standard based on coherent population trapping

NASA Astrophysics Data System (ADS)

Shi, Fan; Yang, Renfu; Nian, Feng; Zhang, Zhenwei; Cui, Yongshun; Zhao, Huan; Wang, Nuanrang; Feng, Keming

2015-05-01

In this work, a portable atomic frequency standard based on coherent population trapping is designed and demonstrated. To achieve a portable prototype, in the system, a single transverse mode 795nm VCSEL modulated by a 3.4GHz RF source is used as a pump laser which generates coherent light fields. The pump beams pass through a vapor cell containing atom gas and buffer gas. This vapor cell is surrounded by a magnetic shield and placed inside a solenoid which applies a longitudinal magnetic field to lift the Zeeman energy levels' degeneracy and to separate the resonance signal, which has no first-order magnetic field dependence, from the field-dependent resonances. The electrical control system comprises two control loops. The first one locks the laser wavelength to the minimum of the absorption spectrum; the second one locks the modulation frequency and output standard frequency. Furthermore, we designed the micro physical package and realized the locking of a coherent population trapping atomic frequency standard portable prototype successfully. The short-term frequency stability of the whole system is measured to be 6×10-11 for averaging times of 1s, and reaches 5×10-12 at an averaging time of 1000s.

Circumferential optical coherence tomography angiography imaging of the swine esophagus using a micromotor balloon catheter.

PubMed

Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Liang, Kaicheng; Wang, Zhao; Cleveland, Cody; Booth, Lucas; Potsaid, Benjamin; Jayaraman, Vijaysekhar; Cable, Alex E; Mashimo, Hiroshi; Langer, Robert; Traverso, Giovanni; Fujimoto, James G

2016-08-01

We demonstrate a micromotor balloon imaging catheter for ultrahigh speed endoscopic optical coherence tomography (OCT) which provides wide area, circumferential structural and angiographic imaging of the esophagus without contrast agents. Using a 1310 nm MEMS tunable wavelength swept VCSEL light source, the system has a 1.2 MHz A-scan rate and ~8.5 µm axial resolution in tissue. The micromotor balloon catheter enables circumferential imaging of the esophagus at 240 frames per second (fps) with a ~30 µm (FWHM) spot size. Volumetric imaging is achieved by proximal pullback of the micromotor assembly within the balloon at 1.5 mm/sec. Volumetric data consisting of 4200 circumferential images of 5,000 A-scans each over a 2.6 cm length, covering a ~13 cm(2) area is acquired in <18 seconds. A non-rigid image registration algorithm is used to suppress motion artifacts from non-uniform rotational distortion (NURD), cardiac motion or respiration. En face OCT images at various depths can be generated. OCT angiography (OCTA) is computed using intensity decorrelation between sequential pairs of circumferential scans and enables three-dimensional visualization of vasculature. Wide area volumetric OCT and OCTA imaging of the swine esophagus in vivo is demonstrated.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects

PubMed Central

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Gyoo Kim, In; Hyuk Oh, Jin; Ae Kim, Sun; Park, Jaegyu; Kim, Sanggi

2015-01-01

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications. PMID:26061463

Simulation of Optical Resonators for Vertical-Cavity Surface-Emitting Lasers (vcsel)

NASA Astrophysics Data System (ADS)

Mansour, Mohy S.; Hassen, Mahmoud F. M.; El-Nozahey, Adel M.; Hafez, Alaa S.; Metry, Samer F.

2010-04-01

Simulation and modeling of the reflectivity and transmissivity of the multilayer DBR of VCSEL, as well as inside the active region quantum well are analyzed using the characteristic matrix method. The electric field intensity distributions inside such vertical-cavity structure are calculated. A software program under MATLAB environment is constructed for the simulation. This study was performed for two specific Bragg wavelengths 980 nm and 370 nm for achieving a resonant periodic gain (RPG)

Joint Services Electronics Program. Basic Research in Electronics (JSEP)

DTIC Science & Technology

1992-08-01

DBRs). Our DBR work allows us to develop improved vertical cavity surface-emitting lasers ( VCSELs ) and also to examine details of optical phenomena... in short-cavity lasers. We have used MBE regrowth techniques to provide current tunnelling into the device active region of the VCSEL . We use an AlAs... optical detector structures. We have already developed significant capability in the low temperature (2506C - 3000C) growth of undoped GaAs and AIo.3Gao

Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

DTIC Science & Technology

1994-03-01

Epitaxial structure of vertical cavity surface - emitting laser ( VCSEL ...diameter (75 tum < d< 150 prm) vertical - cavity surface - emitting lasers fabricated from an epitaxial structure containing a single In0 .2Ga 8.,As quantum...development of vertical - cavity surface - emitting lasers ( VCSELs ) [1] has enabled III-V semiconductor technology to be applied to cer- tain optical

32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

NASA Astrophysics Data System (ADS)

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Komei; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

2018-03-01

We have achieved a high output power of 6 mW from a 441 nm GaN-based vertical-cavity surface-emitting laser (VCSEL) under continuous wave (CW) operation, by reducing both the internal loss and the reflectivity of the front cavity mirror. A preliminary analysis of the internal loss revealed an enormously high transverse radiation loss in a conventional GaN-based VCSEL without lateral optical confinement (LOC). Introducing an LOC structure enhanced the slope efficiency by a factor of 4.7, with a further improvement to a factor of 6.7 upon reducing the front mirror reflectivity. The result was a slope efficiency of 0.87 W/A and an external differential quantum efficiency of 32% under pulsed operation. A flip-chip-bonded VCSEL also exhibited a high slope efficiency of 0.64 W/A and an external differential quantum efficiency of 23% for the front-side output under CW operation. The reflectivity of the cavity mirror was adjusted by varying the number of AlInN/GaN distributed Bragg reflector pairs from 46 to 42, corresponding to reflectivity values from 99.8% to 99.5%. These results demonstrate that a combination of internal loss reduction and cavity mirror control is a very effective way of obtaining a high output GaN-based VCSEL.

Long-wavelength photonic integrated circuits and avalanche photodetectors

NASA Astrophysics Data System (ADS)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve InGaAs/Si APDs with much greater potential than the traditional InGaAs/InP APDs. Preliminary results on their performance will be presented.

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1.31mum: 1.46mum. These techniques offer the promise of inexpensive, high speed fiber networking.

Novel optical interconnect devices and coupling methods applying self-written waveguide technology

NASA Astrophysics Data System (ADS)

Nakama, Kenichi; Mikami, Osamu

2011-05-01

For the use in cost-effective optical interconnection of opt-electronic printed wiring boards (OE-PWBs), we have developed novel optical interconnect devices and coupling methods simplifying board to board optical interconnect. All these are based on the self-written waveguide (SWW) technology by the mask-transfer method with light-curable resin. This method enables fabrication of arrayed M × N optical channels at one shot of UV light. Very precise patterns, as an example, optical rod with diameters of 50μm to 500μm, can be easily fabricated. The length of the fabricated patterns ,, typically up to about 1000μm , can be controlled by a spacer placed between the photomask and the substrate. Using these technologies, several new optical interfaces have been demonstrated. These are a chip VCSEL with an optical output rod and new coupling methods of "plug-in" alignment and "optical socket" based on SWW.

Optically Programmable Field Programmable Gate Arrays (FPGA) Systems

DTIC Science & Technology

2004-01-01

VCSEL requires placing the array far enough as to overlap the entire footprint of the signal beam in order to record the hologram. Therefore, these...hologram that self-focuses, due to phase -conjugation, on the array of detectors in the chip. VC A 10 m m 10 mm 18mm 16mm SEL RRAY OPTICAL MEMORY LOGIC...the VCSEL array , the chip and the optical material, and the requirements they have to meet for their use in the OPGA system. Section

Fast Optoelectronic Switching Processes in Surface-Emitting Semiconductor Lasers and Nonlinear Etalons

DTIC Science & Technology

1992-05-01

molecular beam epitaxy (MWE). The crystal growers have been persuaded of the importance of this work, and several substrate rotation arrangements and In...RPG VCSELS for optical pumping at 800 wm GaAs/GaAlAs RPA etalons without epitaxial reflectors. The first three wafers were destined for above- and below...of MOCVD-grown GaAs/GaAIAs RPO- VCSEL samples with 20 quantum wells and epitaXial multilayer high-reflectivity stacks with R=3.995 and 0.999 was pumped

Optoelectronic Materials Center, A Collaborative Program Including University of New Mexico, Stanford University and California Institute of Technology

DTIC Science & Technology

1993-05-04

a highly coherent output beam that can be focused’. MOCVD is used to fabricate the unstble resonator waveguide in these devices and to ensure a high...investigated. Single-mode VCSELs with excellent electrical characteristics were fabricated with a threshold voltage below 2V and an operating voltage of...resulting eye diagram shows that large-signal electrical modulation at 1-2 GB/s is possible. These VCSELs are therefore suitable for multi-GB/s optical

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hurtado, Antonio, E-mail: antonio.hurtado@strath.ac.uk; Javaloyes, Julien

Multiple controllable spiking patterns are achieved in a 1310 nm Vertical-Cavity Surface Emitting Laser (VCSEL) in response to induced perturbations and for two different cases of polarized optical injection, namely, parallel and orthogonal. Furthermore, reproducible spiking responses are demonstrated experimentally at sub-nanosecond speed resolution and with a controlled number of spikes fired. This work opens therefore exciting research avenues for the use of VCSELs in ultrafast neuromorphic photonic systems for non-traditional computing applications, such as all-optical binary-to-spiking format conversion and spiking information encoding.

Theory of the mode stabilization mechanism in concave-micromirror-capped vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Park, Si-Hyun; Park, Yeonsang; Jeon, Heonsu

2003-08-01

We have investigated theoretically the transverse mode stabilization mechanism in oxide-confined concave-micromirror-capped vertical-cavity surface-emitting lasers (CMC-VCSELs) as reported by Park et al. [Appl. Phys. Lett. 80, 183 (2002)]. From detailed numerical calculations on a model CMC-VCSEL structure, we found that mode discrimination factors appear to be periodic in the micromirror layer thickness with a periodicity of λ/2. We also found that there are two possible concave micromirror structures for the fundamental transverse mode laser operation. These structures can be grouped according to the thickness of the concave micromirror layer: whether it is an integer or a half-integer multiple of λ/2. The optimal micromirror curvature radius differs accordingly for each case. In an optimally designed CMC-VCSEL model structure, the fundamental transverse mode can be favored as much as 4, 8, and 13 times more strongly than the first, second, and third excited modes, respectively.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Principles of VCSEL designing

NASA Astrophysics Data System (ADS)

Nakwaski, W.

2008-03-01

Comprehensive computer simulations are currently the most efficient and cheap methods in designing and optimisation of semiconductor device structures. Seemingly they should be as exact as possible, but in practice it is well known that the most exact approaches are also the most involved and the most time-consuming ones and need powerful computers. In some cases, cheaper somewhat simplified modelling simulations are sufficiently accurate. Therefore, an appropriate modelling approach should be chosen taking into account a compromise between our needs and our possibilities. Modelling of operation and designing of structures of vertical-cavity surface-emitting diode lasers (VCSELs) requires appropriate mathematical description of physical processes crucial for devices operation, i.e., various optical, electrical, thermal, recombination and sometimes also mechanical phenomena taking place within their volumes. Equally important are mutual interactions between above individual processes, usually strongly non-linear and creating a real network of various inter-relations. Chain is as strong as its weakest link. Analogously, model is as exact as its less exact part. Therefore it is useless to improve exactness of its more accurate parts and not to care about less exact ones. All model parts should exhibit similar accuracy. In any individual case, a reasonable compromise should be reached between high modelling fidelity and its practical convenience depending on a main modelling goal, importance and urgency of expected results, available equipment and also financial possibilities. In the present paper, some simplifications used in VCSEL modelling are discussed and their impact on exactness of VCSEL designing is analysed.

Control of Polarization of Vertical-Cavity Surface - Lasers

NASA Astrophysics Data System (ADS)

Sun, Decai

1995-01-01

To date, most vertical-cavity surface-emitting lasers (VCSELs) have been fabricated from structures grown on GaAs (InP) substrates oriented in the (001) crystallographic axis. For the most part, these devices have exhibited linear, but random polarization states with no definite relationship to the in-plane crystallographic axes. The control of the polarization states of these devices is important for polarization-sensitive applications. Such applications include magneto-optic disk recording and coherent detection in advanced communication systems. In this thesis, a novel approach for controlling the polarization eigen-states of VCSELs is investigated. The approach utilizes anisotropic optical properties found in quantum wells (QW) oriented in directions other than the (001) to stabilize their polarization states. Specifically, the (110) direction is chosen for this work. An analysis of the in-plane optical matrix element connected with the gain coefficient of (In,Ga)As/GaAs QW structures grown on (110) GaAs substrates is conducted. It is found that the in-plane gain distribution is elliptically anisotropic--with a maximum directed along the (110) - (110) crystallographic axis. The design and growth of (In,Ga)As/GaAs QW VCSEL structures is studied in this work. The transition wavelengths of the (001) - and (110) -oriented (In,Ga)As/GaAs QW structures are calculated using a finite QW model. Distributed Bragg reflector mirrors consisting of GaAs/AlAs quarter wave layers are modeled using a characteristic matrix method. Threshold gain, internal and differential quantum efficiencies are analyzed. The growth of III-V compounds on (110) GaAs substrates by molecular beam epitaxy is investigated. High quality materials are successfully grown on the misoriented (110) GaAs substrates tilted by 6^circ toward the (111)B surface. (In,Ga)As/GaAs QW VCSEL structures are grown on (001) and (110) GaAs substrates. (In,Ga)As/GaAs QW VCSELs are fabricated from structures grown on the (001) and (110) surfaces. Experimental characterization shows that the devices fabricated from the (110) surface exhibit stable, well-defined polarization states at room temperature; this is in contrast to the random polarization characteristics observed from the VCSELs fabricated from the (001) surface. This stability is believed to be a consequence of the predicted anisotropic gain distribution on the (110) surface. Of the two orthogonal eigen-polarizations observed, the one with the higher optical intensity is found to be aligned along the (110) - (110) crystallographic axis; this is in agreement with theoretical predictions.

Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission

DTIC Science & Technology

2000-06-23

when Nitrogen concentration is increased [91. In molecular beam epitaxy (MBE) one of the reasons of this is the surface quality degradation due to the...cavity surface emitting laser ( VCSEL ) emitting at 1.18 /tm was also reported [7 1. The main problem in the InGaAsN epitaxy is a large difference in the...vertical cavity surface emitting lasers ( VCSELs ). This stimulates attempts to fabricate high quality 1.3 /tm lasers on GaAs substrates. The best results

IV-VI compound midinfrared high-reflectivity mirrors and vertical-cavity surface-emitting lasers grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Shi, Z.; Xu, G.; McCann, P. J.; Fang, X. M.; Dai, N.; Felix, C. L.; Bewley, W. W.; Vurgaftman, I.; Meyer, J. R.

2000-06-01

Midinfrared broadband high-reflectivity Pb1-xSrxSe/BaF2 distributed Bragg reflectors and vertical-cavity surface-emitting lasers (VCSELs) with PbSe as the active material were grown by molecular-beam epitaxy. Because of an extremely high index contrast, mirrors with only three quarter-wave layer pairs had reflectivities exceeding 99%. For pulsed optical pumping, a lead salt VCSEL emitting at the cavity wavelength of 4.5-4.6 μm operated nearly to room temperature (289 K).

VCSEL-based oxygen spectroscopy for structural analysis of pharmaceutical solids

NASA Astrophysics Data System (ADS)

Svensson, T.; Andersson, M.; Rippe, L.; Svanberg, S.; Andersson-Engels, S.; Johansson, J.; Folestad, S.

2008-02-01

We present a minimalistic and flexible single-beam instrumentation based on sensitive tunable diode laser absorption spectroscopy (TDLAS) and its use in structural analysis of highly scattering pharmaceutical solids. By utilising a vertical cavity surface emitting laser (VCSEL) for sensing of molecular oxygen dispersed in tablets, we address structural properties such as porosity. Experiments involve working with unknown path lengths, severe backscattering and diffuse light. These unusual experimental conditions has led to the use of the term gas in scattering media absorption spectroscopy (GASMAS). By employing fully digital wavelength modulation spectroscopy and coherent sampling, system sensitivity in ambient air experiments reaches the 10-7 range. Oxygen absorption exhibited by our tablets, being influenced by both sample porosity and scattering, was in the range 8×10-5 to 2×10-3, and corresponds to 2-50 mm of path length through ambient air (Leq). The day-to-day reproducibility was on average 1.8% (0.3 mm Leq), being limited by mechanical positioning. This is the first time sub-millimetre sensitivity is reached in GASMAS. We also demonstrate measurements on gas transport on a 1-s time scale. By employing pulsed illumination and time-correlated single-photon counting, we reveal that GASMAS exhibits excellent correlation with time-domain photon migration. In addition, we introduce an optical measure of porosity by relating oxygen absorption to average photon time-of-flight. Finally, the simplicity, robustness and low cost of this novel TDLAS instrumentation provide industrial potential.

Time skewing and amplitude nonlinearity mitigation by feedback equalization for 56 Gbps VCSEL-based PAM-4 links

NASA Astrophysics Data System (ADS)

You, Yue; Zhang, Wenjia; Sun, Lin; Du, Jiangbing; Liang, Chenyu; Yang, Fan; He, Zuyuan

2018-03-01

The vertical cavity surface emitting laser (VCSEL)-based multimode optical transceivers enabled by pulse amplitude modulation (PAM)-4 will be commercialized in near future to meet the 400-Gbps standard short reach optical interconnects. It is still challenging to achieve over 56/112-Gbps with the multilevel signaling as the multimode property of the device and link would introduce the nonlinear temporal response for the different levels. In this work, we scrutinize the distortions that relates to the multilevel feature of PAM-4 modulation, and propose an effective feedback equalization scheme for 56-Gbps VCSEL-based PAM-4 optical interconnects system to mitigate the distortions caused by eye timing-skew and nonlinear power-dependent noise. Level redistribution at Tx side is theoretically modeled and constructed to achieve equivalent symbol error ratios (SERs) of four levels and improved BER performance. The cause of the eye skewing and the mitigation approach are also simulated at 100-Gbps and experimentally investigated at 56-Gbps. The results indicate more than 2-dB power penalty improvement has been achieved by using such a distortion aware equalizer.

Impact of Data Transmission over 10 Gbps on High-Density and Low-Cost Optoelectronic Module with Polynorbornene Waveguides

NASA Astrophysics Data System (ADS)

Ito, Yuka; Terada, Shinsuke; Arai, Shinya; Fujiwara, Makoto; Mori, Tetsuya; Choki, Koji; Fukushima, Takafumi; Koyanagi, Mitsumasa

2012-04-01

We proposed a rigid/flex optoelectronic (O/E) module with 48-channel polymeric waveguides for short-distance board-level optical interconnection. A flexible O/E test module was fabricated in the following two steps by using standard packaging processes. First, two vertical cavity surface emitting laser diodes (VCSELs) and one VCSEL driver (VD) were flip-chip bonded to a completed flexible printed circuit board (PCB), and two photodiodes (PDs) and one transimpedance amplifier/limiting amplifier (TIA/LA) to another flexible PCB. Second, the two flexible PCBs were attached with a polynorbornene (PNB) sheet in which high-density PNB waveguides were formed by UV exposure. Active areas of VCSELs and PDs on the flexible PCBs were aligned to micromirrors of the waveguides with -6 µm offset toward the signal propagation direction. We successfully demonstrated data transmission over 10 Gbps and low inter-channel crosstalk of less than -20 dB was achieved in the flexible O/E test module with 120-mm-long and 62.5-µm-pitch waveguides.

Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication

NASA Astrophysics Data System (ADS)

Tansu, Nelson

The thesis covers the development of novel active regions for high-performance edge-emitting lasers (EEL) and vertical cavity surface-emitting lasers (VCSELs) in optical communication. Three main themes of the thesis cover the design, fabrication, and physics of the novel and alternative active regions for GaAs-based VCSELs for the three optical communications windows at wavelength regimes of 850-nm, 1300-nm, and 1500-nm, with the emphases on the 1300-nm InGaAsN QW GaAs-based active regions and on the novel design of 1500-nm GaAs-based active regions. The studies include the utilization of compressively-strained InGaAsP quantum well (QW) active regions for the 850-nm VCSELs. The research on the long-wavelength lasers covers the design, growth, temperature analysis, carrier transport, and gain analysis of the InGaAsN (lambda = 1.3 mum) quantum well lasers. The novel and original design of the GaAsSb-(In)GaAsN type-II QWs to achieve 1500--3000 nm GaAs-based active regions is discussed in detail.

A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Zhiyao; Sun, Kexu; Wang, Guanhua

This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/smore » operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.« less

A top-down design methodology and its implementation for VCSEL-based optical links design

NASA Astrophysics Data System (ADS)

Li, Jiguang; Cao, Mingcui; Cai, Zilong

2005-01-01

In order to find the optimal design for a given specification of an optical communication link, an integrated simulation of electronic, optoelectronic, and optical components of a complete system is required. It is very important to be able to simulate at both system level and detailed model level. This kind of model is feasible due to the high potential of Verilog-AMS language. In this paper, we propose an effective top-down design methodology and employ it in the development of a complete VCSEL-based optical links simulation. The principle of top-down methodology is that the development would proceed from the system to device level. To design a hierarchical model for VCSEL based optical links, the design framework is organized in three levels of hierarchy. The models are developed, and implemented in Verilog-AMS. Therefore, the model parameters are fitted to measured data. A sample transient simulation demonstrates the functioning of our implementation. Suggestions for future directions in top-down methodology used for optoelectronic systems technology are also presented.

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

NASA Astrophysics Data System (ADS)

Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

2008-04-01

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

DOE PAGES

Zeng, Zhiyao; Sun, Kexu; Wang, Guanhua; ...

2017-05-08

This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/smore » operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.« less

Wavelength-agile diode-laser sensing strategies for monitoring gas properties in optically harsh flows: application in cesium-seeded pulse detonation

NASA Astrophysics Data System (ADS)

Sanders, Scott Thomas; Mattison, Daniel W.; Ma, Lin; Jeffries, Jay B.; Hanson, Ronald K.

2002-06-01

The rapid, broad wavelength scanning capabilities of advanced diode lasers allow extension of traditional diode-laser absorption techniques to high pressure, transient, and generally hostile environments. Here, we demonstrate this extension by applying a vertical cavity surface-emitting laser (VCSEL) to monitor gas temperature and pressure in a pulse detonation engine (PDE). Using aggressive injection current modulation, the VCSEL is scanned through a 10 cm-1 spectral window at megahertz rates roughly 10 times the scanning range and 1000 times the scanning rate of a conventional diode laser. The VCSEL probes absorption lineshapes of the ~ 852 nm D2 transition of atomic Cs, seeded at ~ 5 ppm into the feedstock gases of a PDE. Using these lineshapes, detonated-gas temperature and pressure histories, spanning 2000 4000 K and 0.5 30 atm, respectively, are recorded with microsecond time response. The increasing availability of wavelength-agile diode lasers should support the development of similar sensors for other harsh flows, using other absorbers such as native H2O.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

/III-V semiconductor broadband distributed Bragg reflectors for long-wavelength VCSEL and SESAM devices

NASA Astrophysics Data System (ADS)

Koeninger, Anna; Boehm, Gerhard; Meyer, Ralf; Amann, Markus-Christian

2014-12-01

Semiconductor devices such as vertical-cavity surface-emitting lasers (VCSELs) or semiconductor-saturable absorber mirrors (SESAMs) require high-reflection mirrors. Moreover, in VCSELs, it is beneficial to have a crystalline mirror, which is as thin as possible in order to ensure a high thermal conductivity for efficient heat-sinking of the laser. On the other hand, the wavelength tuning range of a SESAM is limited by the reflection bandwidth of its distributed Bragg reflector (DBR). Thus, broadband mirrors are preferable here. This paper reports a three-pair DBR grown by molecular beam epitaxy (MBE) using BaCaF2 and GaAs on a GaAs (100) substrate. Due to the high ratio in refractive indices of GaAs and the group-IIa-fluorides, high-reflectivity mirrors and wide bandwidths can be obtained with low total thicknesses. We also investigated growth and stability of the material BaCaF2, as well as its thermal conductivity both as single layer and Bragg reflector. Observed peeling of the layers could be avoided by implementing a fluorine treatment previous to the BaCaF2 growth.

Ultrahigh speed en face OCT capsule for endoscopic imaging

PubMed Central

Liang, Kaicheng; Traverso, Giovanni; Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Wang, Zhao; Potsaid, Benjamin; Giacomelli, Michael; Jayaraman, Vijaysekhar; Barman, Ross; Cable, Alex; Mashimo, Hiroshi; Langer, Robert; Fujimoto, James G.

2015-01-01

Depth resolved and en face OCT visualization in vivo may have important clinical applications in endoscopy. We demonstrate a high speed, two-dimensional (2D) distal scanning capsule with a micromotor for fast rotary scanning and a pneumatic actuator for precision longitudinal scanning. Longitudinal position measurement and image registration were performed by optical tracking of the pneumatic scanner. The 2D scanning device enables high resolution imaging over a small field of view and is suitable for OCT as well as other scanning microscopies. Large field of view imaging for screening or surveillance applications can also be achieved by proximally pulling back or advancing the capsule while scanning the distal high-speed micromotor. Circumferential en face OCT was demonstrated in living swine at 250 Hz frame rate and 1 MHz A-scan rate using a MEMS tunable VCSEL light source at 1300 nm. Cross-sectional and en face OCT views of the upper and lower gastrointestinal tract were generated with precision distal pneumatic longitudinal actuation as well as proximal manual longitudinal actuation. These devices could enable clinical studies either as an adjunct to endoscopy, attached to an endoscope, or as a swallowed tethered capsule for non-endoscopic imaging without sedation. The combination of ultrahigh speed imaging and distal scanning capsule technology could enable both screening and surveillance applications. PMID:25909001

Circumferential optical coherence tomography angiography imaging of the swine esophagus using a micromotor balloon catheter

PubMed Central

Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Liang, Kaicheng; Wang, Zhao; Cleveland, Cody; Booth, Lucas; Potsaid, Benjamin; Jayaraman, Vijaysekhar; Cable, Alex E.; Mashimo, Hiroshi; Langer, Robert; Traverso, Giovanni; Fujimoto, James G.

2016-01-01

We demonstrate a micromotor balloon imaging catheter for ultrahigh speed endoscopic optical coherence tomography (OCT) which provides wide area, circumferential structural and angiographic imaging of the esophagus without contrast agents. Using a 1310 nm MEMS tunable wavelength swept VCSEL light source, the system has a 1.2 MHz A-scan rate and ~8.5 µm axial resolution in tissue. The micromotor balloon catheter enables circumferential imaging of the esophagus at 240 frames per second (fps) with a ~30 µm (FWHM) spot size. Volumetric imaging is achieved by proximal pullback of the micromotor assembly within the balloon at 1.5 mm/sec. Volumetric data consisting of 4200 circumferential images of 5,000 A-scans each over a 2.6 cm length, covering a ~13 cm2 area is acquired in <18 seconds. A non-rigid image registration algorithm is used to suppress motion artifacts from non-uniform rotational distortion (NURD), cardiac motion or respiration. En face OCT images at various depths can be generated. OCT angiography (OCTA) is computed using intensity decorrelation between sequential pairs of circumferential scans and enables three-dimensional visualization of vasculature. Wide area volumetric OCT and OCTA imaging of the swine esophagus in vivo is demonstrated. PMID:27570688

Ultrahigh speed en face OCT capsule for endoscopic imaging.

PubMed

Liang, Kaicheng; Traverso, Giovanni; Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Wang, Zhao; Potsaid, Benjamin; Giacomelli, Michael; Jayaraman, Vijaysekhar; Barman, Ross; Cable, Alex; Mashimo, Hiroshi; Langer, Robert; Fujimoto, James G

2015-04-01

Depth resolved and en face OCT visualization in vivo may have important clinical applications in endoscopy. We demonstrate a high speed, two-dimensional (2D) distal scanning capsule with a micromotor for fast rotary scanning and a pneumatic actuator for precision longitudinal scanning. Longitudinal position measurement and image registration were performed by optical tracking of the pneumatic scanner. The 2D scanning device enables high resolution imaging over a small field of view and is suitable for OCT as well as other scanning microscopies. Large field of view imaging for screening or surveillance applications can also be achieved by proximally pulling back or advancing the capsule while scanning the distal high-speed micromotor. Circumferential en face OCT was demonstrated in living swine at 250 Hz frame rate and 1 MHz A-scan rate using a MEMS tunable VCSEL light source at 1300 nm. Cross-sectional and en face OCT views of the upper and lower gastrointestinal tract were generated with precision distal pneumatic longitudinal actuation as well as proximal manual longitudinal actuation. These devices could enable clinical studies either as an adjunct to endoscopy, attached to an endoscope, or as a swallowed tethered capsule for non-endoscopic imaging without sedation. The combination of ultrahigh speed imaging and distal scanning capsule technology could enable both screening and surveillance applications.

Sealed symmetric multilayered microelectronic device package with integral windows

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A sealed symmetric multilayered package with integral windows for housing one or more microelectronic devices. The devices can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the windows being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic devices can be flip-chip bonded and oriented so that the light-sensitive sides are optically accessible through the windows. The result is a compact, low-profile, sealed symmetric package, having integral windows that can be hermetically-sealed.

Highly reliable oxide VCSELs for datacom applications

NASA Astrophysics Data System (ADS)

Aeby, Ian; Collins, Doug; Gibson, Brian; Helms, Christopher J.; Hou, Hong Q.; Lou, Wenlin; Bossert, David J.; Wang, Charlie X.

2003-06-01

In this paper we describe the processes and procedures that have been developed to ensure high reliability for Emcore"s 850 nm oxide confined GaAs VCSELs. Evidence from on-going accelerated life testing and other reliability studies that confirm that this process yields reliable products will be discussed. We will present data and analysis techniques used to determine the activation energy and acceleration factors for the dominant wear-out failure mechanisms for our devices as well as our estimated MTTF of greater than 2 million use hours. We conclude with a summary of internal verification and field return rate validation data.

Molecular beam epitaxy growth method for vertical-cavity surface-emitting laser resonators based on substrate thermal emission

NASA Astrophysics Data System (ADS)

Talghader, J. J.; Hadley, M. A.; Smith, J. S.

1995-12-01

A molecular beam epitaxy growth monitoring method is developed for distributed Bragg reflectors and vertical-cavity surface-emitting laser (VCSEL) resonators. The wavelength of the substrate thermal emission that corresponds to the optical cavity resonant wavelength is selected by a monochromator and monitored during growth. This method allows VCSEL cavities of arbitrary design wavelength to be grown with a single control program. This letter also presents a theoretical model for the technique which is based on transmission matrices and simple thermal emission properties. Demonstrated reproducibility of the method is well within 0.1%.

Matrix addressable vertical cavity surface emitting laser array

NASA Astrophysics Data System (ADS)

Orenstein, M.; von Lehmen, A. C.; Chang-Hasnain, C.; Stoffel, N. G.; Harbison, J. P.

1991-02-01

The design, fabrication and characterization of 1024-element matrix-addressable vertical-cavity surface-emitting laser (VCSEL) arrays are described. A strained InGaAs quantum-well VCSEL structure was grown by MBE, and an array of 32 x 32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8 percent.

Scalable electro-photonic integration concept based on polymer waveguides

NASA Astrophysics Data System (ADS)

Bosman, E.; Van Steenberge, G.; Boersma, A.; Wiegersma, S.; Harmsma, P.; Karppinen, M.; Korhonen, T.; Offrein, B. J.; Dangel, R.; Daly, A.; Ortsiefer, M.; Justice, J.; Corbett, B.; Dorrestein, S.; Duis, J.

2016-03-01

A novel method for fabricating a single mode optical interconnection platform is presented. The method comprises the miniaturized assembly of optoelectronic single dies, the scalable fabrication of polymer single mode waveguides and the coupling to glass fiber arrays providing the I/O's. The low cost approach for the polymer waveguide fabrication is based on the nano-imprinting of a spin-coated waveguide core layer. The assembly of VCSELs and photodiodes is performed before waveguide layers are applied. By embedding these components in deep reactive ion etched pockets in the silicon substrate, the planarity of the substrate for subsequent layer processing is guaranteed and the thermal path of chip-to-substrate is minimized. Optical coupling of the embedded devices to the nano-imprinted waveguides is performed by laser ablating 45 degree trenches which act as optical mirror for 90 degree deviation of the light from VCSEL to waveguide. Laser ablation is also implemented for removing parts of the polymer stack in order to mount a custom fabricated connector containing glass fiber arrays. A demonstration device was built to show the proof of principle of the novel fabrication, packaging and optical coupling principles as described above, combined with a set of sub-demonstrators showing the functionality of the different techniques separately. The paper represents a significant part of the electro-photonic integration accomplishments in the European 7th Framework project "Firefly" and not only discusses the development of the different assembly processes described above, but the efforts on the complete integration of all process approaches into the single device demonstrator.

Demonstration of enhanced side-mode suppression in metal-filled photonic crystal vertical cavity lasers.

PubMed

Griffin, Benjamin G; Arbabi, Amir; Peun Tan, Meng; Kasten, Ansas M; Choquette, Kent D; Goddard, Lynford L

2013-06-01

Previously reported simulations have suggested that depositing thin layers of metal over the surface of a single-mode, etched air hole photonic crystal (PhC) vertical-cavity surface-emitting laser (VCSEL) could potentially improve the laser's side-mode suppression ratio by introducing additional losses to the higher-order modes. This work demonstrates the concept by presenting the results of a 30 nm thin film of Cr deposited on the surface of an implant-confined PhC VCSEL. Both experimental measurements and simulation results are in agreement showing that the single-mode operation is improved at the same injection current ratio relative to threshold.

Multimode VCSEL model for wide frequency-range RIN simulation

NASA Astrophysics Data System (ADS)

Perchoux, Julien; Rissons, Angélique; Mollier, Jean-Claude

2008-01-01

In this paper, we present an equivalent circuit model for oxide-confined AlGaAs/GaAs VCSEL with the noise contribution adapted to optomicrowave links applications. This model is derived from the multimode rate equations. In order to understand the modal competition process, we restrain our description to a two-modes rate equations system affected by the spectral hole-burning. The relative intensity noise (RIN) measurements which were achieved on a prober in Faraday cage confirm the low frequency enhancement described by the model. We validate our model for a wide frequency-range [1 MHz-10 GHz] and high bias level up to six times the threshold current.

Tunable photonic cavities for in-situ spectroscopic trace gas detection

DOEpatents

Bond, Tiziana; Cole, Garrett; Goddard, Lynford

2012-11-13

Compact tunable optical cavities are provided for in-situ NIR spectroscopy. MEMS-tunable VCSEL platforms represents a solid foundation for a new class of compact, sensitive and fiber compatible sensors for fieldable, real-time, multiplexed gas detection systems. Detection limits for gases with NIR cross-sections such as O.sub.2, CH.sub.4, CO.sub.x and NO.sub.x have been predicted to approximately span from 10.sup.ths to 10s of parts per million. Exemplary oxygen detection design and a process for 760 nm continuously tunable VCSELS is provided. This technology enables in-situ self-calibrating platforms with adaptive monitoring by exploiting Photonic FPGAs.

Polarization mode control of long-wavelength VCSELs by intracavity patterning

DOE PAGES

Long, Christopher Michael; Mickovic, Zlatko; Dwir, Benjamin; ...

2016-04-26

Polarization mode control is enhanced in wafer-fused vertical-cavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces birefringence and dichroism, which discriminates between the two polarization states of the fundamental transverse modes. We find that the cavity modifications define the polarization angle at threshold with respect to the crystal axes, and increase the gain anisotropy and birefringence on average, leading to an increase in the polarization switching current. As a result, experimental measurements are explained using the spin-flip model of VCSEL polarization dynamics.

An optically passive method that doubles the rate of 2-Ghz timing fiducials

NASA Astrophysics Data System (ADS)

Boni, R.; Kendrick, J.; Sorce, C.

2017-08-01

Solid-state optical comb-pulse generators provide a convenient and accurate method to include timing fiducials in a streak camera image for time base correction. Commercially available vertical-cavity surface-emitting lasers (VCSEL's) emitting in the visible currently in use can be modulated up to 2 GHz. An optically passive method is presented to interleave a time-delayed path of the 2-GHz comb with itself, producing a 4-GHz comb. This technique can be applied to VCSEL's with higher modulation rates. A fiber-delivered, randomly polarized 2-GHz VCSEL comb is polarization split into s-polarization and p-polarization paths. One path is time delayed relative to the other by twice the 2-GHz rate with +/-1-ps accuracy; the two paths then recombine at the fiber-coupled output. High throughput (>=90%) is achieved by carefully using polarization beam-splitting cubes, a total internal reflection beam-path-steering prism, and antireflection coatings. The glass path-length delay block and turning prism are optically contacted together. The beam polarizer cubes that split and recombine the paths are precision aligned and permanently cemented into place. We expect the palm-sized, inline fiber-coupled, comb-rate-doubling device to maintain its internal alignment indefinitely.

Transverse Mode Dynamics of VCSELs Undergoing Current Modulation

NASA Technical Reports Server (NTRS)

Goorjian, Peter M.; Ning, C. Z.; Agrawal, Govind

2000-01-01

Transverse mode dynamics of a 20-micron-diameter vertical-cavity surface-emitting laser (VCSEL) undergoing gain switching by deep current modulation is studied numerically. The direct current (dc) level is set slightly below threshold and is modulated by a large alternating current (ac). The resulting optical pulse train and transverse-mode patterns are obtained numerically. The ac frequency is varied from 2.5 GHz to 10 GHz, and the ac amplitude is varied from one-half to four times that of the dc level. At high modulation frequencies, a regular pulse train is not generated unless the ac amplitude is large enough. At all modulation frequencies, the transverse spatial profile switches from single-mode to multiple-mode pattern as the ac pumping level is increased. Optical pulse widths vary in the range 5-30 ps. with the pulse width decreasing when either the frequency is increased or the ac amplitude is decreased. The numerical modeling uses an approximation form of the semiconductor Maxwell-Bloch equations. Temporal evolution of the spatial profiles of the laser (and of carrier density) is determined without any assumptions about the type or number of modes. Keywords: VCSELs, current modulation, gain switching, transverse mode dynamics, computational modeling

Biwavelength transceiver module for parallel simultaneous bidirectional optical interconnections

NASA Astrophysics Data System (ADS)

Nguyen, Nga T. H.; Ukaegbu, Ikechi A.; Sangirov, Jamshid; Cho, Mu-Hee; Lee, Tae-Woo; Park, Hyo-Hoon

2013-12-01

The design of a biwavelength transceiver (TRx) module for parallel simultaneous bidirectional optical interconnects is described. The TRx module has been implemented using two different wavelengths, 850 and 1060 nm, to send and receive signals simultaneously through a common optical interface while optimizing cost and performance. Filtering mirrors are formed in the optical fibers which are embedded on a V-grooved silicon substrate for reflecting and filtering optical signals from/to vertical-cavity surface-emitting laser (VCSEL)/photodiode (PD). The VCSEL and PD are flip-chip bonded on individual silicon optical benches, which are attached on the silicon substrate for optical signal coupling from the VCSEL to fiber and from fiber to the PD. A high-speed and low-loss ceramic printed circuit board, which has a compact size of 0.033 cc, has been designed to carry transmitter and receiver chips for easy packaging of the TRx module. Applied for quad small form-factor pluggable applications at 40-Gbps operation, the four-channel biwavelength TRx module showed clear eye diagrams with a bit error rate (BER) of 10-12 at input powers of -5 and -5.8 dBm for 1060 and 850 nm operation modes, respectively.

Highly accurate pulse-per-second timing distribution over optical fibre network using VCSEL side-mode injection

NASA Astrophysics Data System (ADS)

Wassin, Shukree; Isoe, George M.; Gamatham, Romeo R. G.; Leitch, Andrew W. R.; Gibbon, Tim B.

2017-01-01

Precise and accurate timing signals distributed between a centralized location and several end-users are widely used in both metro-access and speciality networks for Coordinated Universal Time (UTC), GPS satellite systems, banking, very long baseline interferometry and science projects such as SKA radio telescope. Such systems utilize time and frequency technology to ensure phase coherence among data signals distributed across an optical fibre network. For accurate timing requirements, precise time intervals should be measured between successive pulses. In this paper we describe a novel, all optical method for quantifying one-way propagation times and phase perturbations in the fibre length, using pulse-persecond (PPS) signals. The approach utilizes side mode injection of a 1550nm 10Gbps vertical cavity surface emitting laser (VCSEL) at the remote end. A 125 μs one-way time of flight was accurately measured for 25 km G655 fibre. Since the approach is all-optical, it avoids measurement inaccuracies introduced by electro-optical conversion phase delays. Furthermore, the implementation uses cost effective VCSEL technology and suited to a flexible range of network architectures, supporting a number of end-users conducting measurements at the remote end.

4 channel × 10 Gb/s bidirectional optical subassembly using silicon optical bench with precise passive optical alignment.

PubMed

Kang, Eun Kyu; Lee, Yong Woo; Ravindran, Sooraj; Lee, Jun Ki; Choi, Hee Ju; Ju, Gun Wu; Min, Jung Wook; Song, Young Min; Sohn, Ik-Bu; Lee, Yong Tak

2016-05-16

We demonstrate an advanced structure for optical interconnect consisting of 4 channel × 10 Gb/s bidirectional optical subassembly (BOSA) formed using silicon optical bench (SiOB) with tapered fiber guiding holes (TFGHs) for precise and passive optical alignment of vertical-cavity surface-emitting laser (VCSEL)-to-multi mode fiber (MMF) and MMF-to-photodiode (PD). The co-planar waveguide (CPW) transmission line (Tline) was formed on the backside of silicon substrate to reduce the insertion loss of electrical data signal. The 4 channel VCSEL and PD array are attached at the end of CPW Tline using a flip-chip bonder and solder pad. The 12-channel ribbon fiber is simply inserted into the TFGHs of SiOB and is passively aligned to the VCSEL and PD in which no additional coupling optics are required. The fabricated BOSA shows high coupling efficiency and good performance with the clearly open eye patterns and a very low bit error rate of less than 10^-12 order at a data rate of 10 Gb/s with a PRBS pattern of 2³¹-1.

Vertical-Cavity Surface-Emitting Laser Diodes: Design, Growth, Mode Control and Integration by Fluidic Self-Assembly

NASA Astrophysics Data System (ADS)

Hadley, Mark Alfred

Some important problems to overcome in the design and fabrication of vertical-cavity surface-emitting laser diodes (VCSELs) are: narrow design tolerances, molecular beam epitaxy growth control and multiple transverse modes. This dissertation addresses each of these problems. First, optical, electrical and thermal design issues are discussed in detail. Second, a new growth method using the thermal emission from the substrate during growth is described which is used to accurately control the growth of multilayer structures. The third problem addressed is that of multiple transverse modes. For many applications it is desirable for a VCSEL to lase in the lowest-order transverse mode. In most structures, this only occurs at low powers. It is shown that an external cavity can be used to force a VCSEL to lase in a single transverse mode at all power levels. A new type of VCSEL, grown on a p-doped substrate in order to increase injection uniformity, is designed specifically for use in an external cavity. There are two types of external cavities used to control modes: a long external "macro-cavity" and a short external "micro-cavity." These external cavities have been used to obtain peak powers of over 100 mW while remaining in the fundamental mode under pulsed operation. Finally, a more general topic is researched. This topic, called fluidic self-assembly (FSA), is a new integration technique that can be used not only to integrate VCSELs on a separate substrate, but to integrate many different material systems and devices together on the same substrate. The basic concept of FSA is to make a large number of objects of a particular shape. On a separate substrate, holes that match the shape of the objects are also fabricated. By placing the substrate in an inert fluid containing the objects, and recirculating the fluid and the objects over the substrate, it is possible to fill the holes with correctly oriented objects. Results of a FSA study are reported in which 100% fill factors are obtained. Specifically, FSA was used to assemble two different sizes of silicon blocks into holes in a silicon substrate. Fabrication techniques as well as FSA results are included.

Multilayered Microelectronic Device Package With An Integral Window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-10-26

A microelectronic package with an integral window mounted in a recessed lip for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can be formed of a low temperature co-fired ceramic (LTCC) or high temperature cofired ceramic (HTCC) multilayered material, with the integral window being simultaneously joined (e.g. co-fired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that a light-sensitive side is optically accessible through the window. The result is a compact, low profile package, having an integral window mounted in a recessed lip, that can be hermetically sealed.

Low-cost fabrication of optical waveguides, interconnects and sensing structures on all-polymer-based thin foils

NASA Astrophysics Data System (ADS)

Rezem, Maher; Kelb, Christian; Günther, Axel; Rahlves, Maik; Reithmeier, Eduard; Roth, Bernhard

2016-03-01

Micro-optical sensors based on optical waveguides are widely used to measure temperature, force and strain but also to detect biological and chemical substances such as explosives or toxins. While optical micro-sensors based on silicon technology require complex and expensive process technologies, a new generation of sensors based completely on polymers offer advantages especially in terms of low-cost and fast production techniques. We have developed a process to integrate micro-optical components such as embedded waveguides and optical interconnects into polymer foils with a thickness well below one millimeter. To enable high throughput production, we employ hot embossing technology, which is capable of reel-to-reel fabrication with a surface roughness in the optical range. For the waveguide fabrication, we used the thermoplastic polymethylmethacrylate (PMMA) as cladding and several optical adhesives as core materials. The waveguides are characterized with respect to refractive indices and propagation losses. We achieved propagation losses are as low as 0.3 dB/cm. Furthermore, we demonstrate coupling structures and their fabrication especially suited to integrate various light sources such as vertical-cavity surface-emitting lasers (VCSEL) and organic light emitting diodes (OLED) into thin polymer foils. Also, we present a concept of an all-polymer and waveguide based deformation sensor based on intensity modulation, which can be fabricated by utilizing our process. For future application, we aim at a low-cost and high-throughput reel-to-reel production process enabling the fabrication of large sensor arrays or disposable single-use sensing structures, which will open optical sensing to a large variety of application fields ranging from medical diagnosis to automotive sensing.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

VCSEL-based optical transceiver module for high-speed short-reach interconnect

NASA Astrophysics Data System (ADS)

Yagisawa, Takatoshi; Oku, Hideki; Mori, Tatsuhiro; Tsudome, Rie; Tanaka, Kazuhiro; Daikuhara, Osamu; Komiyama, Takeshi; Ide, Satoshi

2017-02-01

Interconnects have been more important in high-performance computing systems and high-end servers beside its improvements in computing capability. Recently, active optical cables (AOCs) have started being used for this purpose instead of conventionally used copper cables. The AOC enables to extend the transmission distance of the high-speed signals dramatically by its broadband characteristics, however, it tend to increase the cost. In this paper, we report our developed quad small form-factor pluggable (QSFP) AOC utilizing cost-effective optical-module technologies. These are a unique structure using generally used flexible printed circuit (FPC) in combination with an optical waveguide that enables low-cost high-precision assembly with passive alignment, a lens-integrated ferrule that improves productivity by eliminating a polishing process for physical contact of standard PMT connector for the optical waveguide, and an overdrive technology that enables 100 Gb/s (25 Gb/s × 4-channel) operation with low-cost 14 Gb/s vertical-cavity surfaceemitting laser (VCSEL) array. The QSFP AOC demonstrated clear eye opening and error-free operation at 100 Gb/s with high yield rate even though the 14 Gb/s VCSEL was used thanks to the low-coupling loss resulting from the highprecision alignment of optical devices and the over-drive technology.

Time-domain diffuse optics: towards next generation devices

NASA Astrophysics Data System (ADS)

Contini, Davide; Dalla Mora, Alberto; Arridge, Simon; Martelli, Fabrizio; Tosi, Alberto; Boso, Gianluca; Farina, Andrea; Durduran, Turgut; Martinenghi, Edoardo; Torricelli, Alessandro; Pifferi, Antonio

2015-07-01

Diffuse optics is a powerful tool for clinical applications ranging from oncology to neurology, but also for molecular imaging, and quality assessment of food, wood and pharmaceuticals. We show that ideally time-domain diffuse optics can give higher contrast and a higher penetration depth with respect to standard technology. In order to completely exploit the advantages of a time-domain system a distribution of sources and detectors with fast gating capabilities covering all the sample surface is needed. Here, we present the building block to build up such system. This basic component is made of a miniaturised source-detector pair embedded into the probe based on pulsed Vertical-Cavity Surface-Emitting Lasers (VCSEL) as sources and Single-Photon Avalanche Diodes (SPAD) or Silicon Photomultipliers (SiPM) as detectors. The possibility to miniaturized and dramatically increase the number of source detectors pairs open the way to an advancement of diffuse optics in terms of improvement of performances and exploration of new applications. Furthermore, availability of compact devices with reduction in size and cost can boost the application of this technique.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

A full-duplex working integrated optoelectronic device for optical interconnect

NASA Astrophysics Data System (ADS)

Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

2018-05-01

In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

MIMO-OFDM WDM PON with DM-VCSEL for femtocells application.

PubMed

Othman, M B; Deng, Lei; Pang, Xiaodan; Caminos, J; Kozuch, W; Prince, K; Yu, Xianbin; Jensen, Jesper Bevensee; Monroy, I Tafur

2011-12-12

We report on experimental demonstration of 2x2 MIMO-OFDM 5.6-GHz radio over fiber signaling over 20 km WDM-PON with directly modulated (DM) VCSELs for femtocells application. MIMO-OFDM algorithms effectively compensate for impairments in the wireless link. Error-free signal demodulation of 64 subcarrier 4-QAM signals modulated at 198.5 Mb/s net data rate is achieved after fiber and 2 m indoor wireless transmission. We report BER of 7x10(-3) at the receiver for 16-QAM signals modulated at 397 Mb/s after 1 m of wireless transmission. Performance dependence on different wireless transmission path lengths, antenna separation, and number of subcarriers have been investigated. © 2011 Optical Society of America

760 nm high-performance VCSEL growth and characterization

NASA Astrophysics Data System (ADS)

Rinaldi, Fernando; Ostermann, Johannes M.; Kroner, Andrea; Riedl, Michael C.; Michalzik, Rainer

2006-04-01

High-performance vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength of approximately 764 nm are demonstrated. This wavelength is very attractive for oxygen sensing. Low threshold currents, high optical output power, single-mode operation, and stable polarization are obtained. Using the surface relief technique and in particular the grating relief technique, we have increased the single-mode output power to more than 2.5mW averaged over a large device quantity. The laser structure was grown by molecular beam epitaxy (MBE) on GaAs (100)-oriented substrates. The devices are entirely based on the AlGaAs mixed compound semiconductor material system. The growth process, the investigations of the epitaxial material together with the device fabrication and characterization are discussed in detail.

Epitaxy of spin injectors and their application toward spin-polarized lasers

NASA Astrophysics Data System (ADS)

Holub, Michael A.

Spintronics is an emerging; multidisciplinary field which examines the role of electron and nuclear spin in solid-state physics. Recent experiments suggest that the spin degree of freedom may be exploited to enhance the functionality of conventional semi conductor devices. Such endeavors require methods for efficient spin injection; spin transport, and spin detection in semiconductor heterostructures. This dissertation investigates the molecular-beam epitaxial growth and properties of ferromagnetic materials for electrical spin injection. Spin-injecting contacts are incorporated into prototype spintronic devices and their performance is examined. Two classes of materials may be used for spin injection into semiconductors: dilute magnetic semiconductor and ferromagnetic metals. The low-temperature growth and properties of (Al)Gal4nAs and In(Ga)MnAs epilayers and nanostructures are investigated, and a technique for the self-organized growth of Mn-doped InAs quantum dots is developed. The epitaxial growth of (Fe,MnAs)/(Al)GaAs Schottky tunnel barriers for electron spin injection is also investigated. The spin-injection efficiency of these contacts is assessed using a spin-valve or spin-polarized light-emitting diode. Lateral MnAs/GaAs spin-valves where Schottky tunnel barriers enable all-electrical spin injection and detection are grown, fabricated, and characterized. The Rowell criteria confirm that tunneling is the dominant, transport mechanism for the Schottky tunnel contacts. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K are observed for a 0.5 pin channel length spin-valve. Measurements using non-local spin-valves and other control devices verify that spurious contributions from anisotropic magnetoresistance and local Hall effects are negligible. Spin-polarized lasers offer inherent polarization control, reduced chirp, and lower threshold currents and are expected to outperform their charge-based counterparts. Initial efforts to realize a spin-VCSEL utilize (Ga,Mn)As spin aligners for hole spin injection. The polarization of the laser emission is dominated by dichroic absorption in the ferromagnetic (Ga,Mn)As spin-aligner layer, which greatly complicates the verification of spin injection. Significant spin-dependent effects are observed in a spin-VCSEL utilizing epitaxially regrown Fe/AlGaAs Schottky tunnel barriers. A maximum degree of circular polarization of 23% and corresponding threshold current reduction of 11% are measured for a 15 mum Fe spin-VCSEL at 50 K. A cavity spin polarization of 16.8% is estimated from rate equation analysis.

Experimental demonstration of the optical multi-mesh hypercube: scaleable interconnection network for multiprocessors and multicomputers.

PubMed

Louri, A; Furlonge, S; Neocleous, C

1996-12-10

A prototype of a novel topology for scaleable optical interconnection networks called the optical multi-mesh hypercube (OMMH) is experimentally demonstrated to as high as a 150-Mbit/s data rate (2(7) - 1 nonreturn-to-zero pseudo-random data pattern) at a bit error rate of 10(-13)/link by the use of commercially available devices. OMMH is a scaleable network [Appl. Opt. 33, 7558 (1994); J. Lightwave Technol. 12, 704 (1994)] architecture that combines the positive features of the hypercube (small diameter, connectivity, symmetry, simple routing, and fault tolerance) and the mesh (constant node degree and size scaleability). The optical implementation method is divided into two levels: high-density local connections for the hypercube modules, and high-bit-rate, low-density, long connections for the mesh links connecting the hypercube modules. Free-space imaging systems utilizing vertical-cavity surface-emitting laser (VCSEL) arrays, lenslet arrays, space-invariant holographic techniques, and photodiode arrays are demonstrated for the local connections. Optobus fiber interconnects from Motorola are used for the long-distance connections. The OMMH was optimized to operate at the data rate of Motorola's Optobus (10-bit-wide, VCSEL-based bidirectional data interconnects at 150 Mbits/s). Difficulties encountered included the varying fan-out efficiencies of the different orders of the hologram, misalignment sensitivity of the free-space links, low power (1 mW) of the individual VCSEL's, and noise.

High-contrast gratings for long-wavelength laser integration on silicon

NASA Astrophysics Data System (ADS)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

NASA Astrophysics Data System (ADS)

Goddard, Lynford

2005-12-01

Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

480 Mbit/s UWB bi-directional radio over fiber CWDM PON using ultra-low cost and power VCSELs.

PubMed

Quinlan, Terence; Morant, Maria; Dudley, Sandra; Llorente, Roberto; Walker, Stuart

2011-12-12

Radio-over-fiber (RoF) schemes offer the possibility of permitting direct access to native format services for the domestic user. A low power requirement and cost effectiveness are crucial to both the service provider and the end user. Here, we present an ultra-low cost and power RoF scheme using direct modulation of commercially-available 1344 nm and 1547 nm VCSELs by band-group 1 UWB wireless signals (ECMA-368) at near broadcast power levels. As a result, greatly simplified electrical-optical-electrical conversion is accomplished. A successful demonstration over a transmission distance of 20.1 km is described using a SSMF, CWDM optical network. EVMs of better than -18.3 dB were achieved. © 2011 Optical Society of America

Progress and issues for high-speed vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lear, Kevin L.; Al-Omari, Ahmad N.

2007-02-01

Extrinsic electrical, thermal, and optical issues rather than intrinsic factors currently constrain the maximum bandwidth of directly modulated vertical cavity surface emitting lasers (VCSELs). Intrinsic limits based on resonance frequency, damping, and K-factor analysis are summarized. Previous reports are used to compare parasitic circuit values and electrical 3dB bandwidths and thermal resistances. A correlation between multimode operation and junction heating with bandwidth saturation is presented. The extrinsic factors motivate modified bottom-emitting structures with no electrical pads, small mesas, copper plated heatsinks, and uniform current injection. Selected results on high speed quantum well and quantum dot VCSELs at 850 nm, 980 nm, and 1070 nm are reviewed including small-signal 3dB frequencies up to 21.5 GHz and bit rates up to 30 Gb/s.

Bi-level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2004-01-06

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

Single level microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-12-09

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The package can be formed of a multilayered LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during cofiring. The microelectronic device can be flip-chip interconnected so that the light-sensitive side is optically accessible through the window. A glob-top encapsulant or protective cover can be used to protect the microelectronic device and electrical interconnections. The result is a compact, low profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device.

Driver-receiver combined optical transceiver modules for bidirectional optical interconnection

NASA Astrophysics Data System (ADS)

Park, Hyo-Hoon; Kang, Sae-Kyoung; Kim, Do-Won; Nga, Nguyen T. H.; Hwang, Sung-Hwan; Lee, Tae-Woo

2008-02-01

We review a bidirectional optical link scheme for memory-interface applications. A driver-receiver combined optical transceiver (TRx) modules was demonstrated on an optical printed-circuit board (OPCB) platform. To select the bidirectional electric input/output signals, a driver-receiver combined TRx IC with a switching function was designed in 0.18-μm CMOS technology. The TRx IC was integrated with VCSEL/PD chips for optical link in the TRx module. The optical TRx module was assembled on a fiber-embedded OPCB, employing a 90°-bent fiber connector for 90° deflection of light beams between the TRx module and the OPCB. The TRx module and the 90° connector were passively assembled on the OPCB, using ferrule-type guide pins/ holes. Employing these constituent components, the bidirectional optical link between a pair of TRx modules has been successfully demonstrated up to 1.25 Gb/s on the OPCB.

Bi-level multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

A bi-level, multilayered package with an integral window for housing a microelectronic device. The device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The multilayered package can be formed of a low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded and oriented so that the light-sensitive side is optically accessible through the window. A second chip can be bonded to the backside of the first chip, with the second chip being wirebonded to the second level of the bi-level package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed.

High-speed 850-nm VCSELs for 40-Gb/s transmission

NASA Astrophysics Data System (ADS)

Gustavsson, Johan; Westbergh, Petter; Szczerba, Krzysztof; Haglund, Åsa; Larsson, Anders; Karlsson, Magnus; Andrekson, Peter; Hopfer, Friedhelm; Fiol, Gerrit; Bimberg, Dieter; Olsson, Bengt-Erik; Kristiansson, A.; Healy, Sorcha; O'Reilly, Eoin; Joel, Andrew

2010-04-01

We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER<10-12) under direct modulation at a record-high bit-rate of 32 Gb/s over 50 m of OM3 fiber at room temperature, and at 25 Gb/s over 100 m of OM3 fiber at 85 °C. We also demonstrate transmission at 40 Gb/s over 200 m of OM3+ fiber at room temperature using a subcarrier multiplexing scheme with a spectrally efficient 16 QAM modulation format. All transmission results were obtained with the VCSEL biased at current densities between 11-14 kA/cm2, which is close to the 10 kA/cm2 industry benchmark for reliability. Finally, we show that by a further reduction of the oxide capacitance and by reducing the photon lifetime using a shallow surface etch, a record bandwidth of 23 GHz for 850 nm VCSELs can be reached.

Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

PubMed

Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

2013-06-01

Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

Delay feedback induces a spontaneous motion of two-dimensional cavity solitons in driven semiconductor microcavities

NASA Astrophysics Data System (ADS)

Tlidi, M.; Averlant, E.; Vladimirov, A.; Panajotov, K.

2012-09-01

We consider a broad area vertical-cavity surface-emitting laser (VCSEL) operating below the lasing threshold and subject to optical injection and time-delayed feedback. We derive a generalized delayed Swift-Hohenberg equation for the VCSEL system, which is valid close to the nascent optical bistability. We first characterize the stationary-cavity solitons by constructing their snaking bifurcation diagram and by showing clustering behavior within the pinning region of parameters. Then, we show that the delayed feedback induces a spontaneous motion of two-dimensional (2D) cavity solitons in an arbitrary direction in the transverse plane. We characterize moving cavity solitons by estimating their threshold and calculating their velocity. Numerical 2D solutions of the governing semiconductor laser equations are in close agreement with those obtained from the delayed generalized Swift-Hohenberg equation.

1060-nm VCSEL-based parallel-optical modules for optical interconnects

NASA Astrophysics Data System (ADS)

Nishimura, N.; Nagashima, K.; Kise, T.; Rizky, A. F.; Uemura, T.; Nekado, Y.; Ishikawa, Y.; Nasu, H.

2015-03-01

The capability of mounting a parallel-optical module onto a PCB through solder-reflow process contributes to reduce the number of piece parts, simplify its assembly process, and minimize a foot print for both AOC and on-board applications. We introduce solder-reflow-capable parallel-optical modules employing 1060-nm InGaAs/GaAs VCSEL which leads to the advantages of realizing wider modulation bandwidth, longer transmission distance, and higher reliability. We demonstrate 4-channel parallel optical link performance operated at a bit stream of 28 Gb/s 231-1 PRBS for each channel and transmitted through a 50-μm-core MMF beyond 500 m. We also introduce a new mounting technology of paralleloptical module to realize maintaining good coupling and robust electrical connection during solder-reflow process between an optical module and a polymer-waveguide-embedded PCB.

Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor

PubMed Central

O’Sullivan, Thomas D.; Heitz, Roxana T.; Parashurama, Natesh; Barkin, David B.; Wooley, Bruce A.; Gambhir, Sanjiv S.; Harris, James S.; Levi, Ofer

2013-01-01

Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm3 and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant. PMID:24009996

In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures

NASA Astrophysics Data System (ADS)

Breiland, William G.; Hou, Hong Q.; Chui, Herman C.; Hammons, Burrel E.

1997-04-01

In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial metal organic chemical vapor deposition reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of reflection high-energy electron diffraction in molecular beam epitaxy as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than 1 h. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded ±0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.

Efficient Heat Dissipation of Uncooled 400-Gbps (16×25-Gbps) Optical Transceiver Employing Multimode VCSEL and PD Arrays

NASA Astrophysics Data System (ADS)

Shih, Tien-Tsorng; Chi, Yu-Chieh; Wang, Ruei-Nian; Wu, Chao-Hsin; Huang, Jian-Jang; Jou, Jau-Ji; Lee, Tai-Cheng; Kuo, Hao-Chung; Lin, Gong-Ru; Cheng, Wood-Hi

2017-04-01

An effective heat dissipation of uncooled 400-Gbps (16×25-Gbps) form-factor pluggable (CDFP) optical transceiver module employing chip-on-board multimode 25-Gbps vertical-surface-emitting-laser (VCSEL) and 25-Gbps photodiode (PD) arrays mounted on a brass metal core embedded within a printed circuit board (PCB) is proposed and demonstrated. This new scheme of the hollow PCB filling with thermally-dissipated brass metal core was simulated and used for high temperature and long term stability operation of the proposed 400-Gbps CDFP transceiver. During one-hour testing, a red-shift of central wavelength by 0.4-nm corresponding temperature increment of 6.7 °C was observed with the brass core assisted cooler module. Such a temperature change was significantly lower than that of 28.3 °C for the optical transceiver driven with conventional circuit board. After 100-m distance transmission over a multimode fiber (OM4), the 400-Gbps CDFP transceiver exhibited dispersion penalty of 2.6-dB, power budget of ≧ 3-dB, link loss of ≦ 0.63-dB, mask margin of 20%, and bit error rate (BER) of <10-12 with maintained stability more than one hour. The developed 400-Gbps CDFP transceiver module employing low-power consumption VCSEL and PD arrays, effective coupling lens arrays, and well thermal-dissipation brass metal core is suitable for use in the low-cost and high-performance data center applications.

Singlemode 1.1 μm InGaAs quantum well microstructured photonic crystal VCSEL

NASA Astrophysics Data System (ADS)

Stevens, Renaud; Gilet, Philippe; Larrue, Alexandre; Grenouillet, Laurent; Olivier, Nicolas; Grosse, Philippe; Gilbert, Karen; Teysseyre, Raphael; Chelnokov, Alexei

2008-02-01

In this article, we present our results on long wavelength (1.1 μm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode roomtemperature continuous-wave lasing operation was demonstrated for devices designed and processed with a number of different two-dimensional etched patterns. The conventional epitaxial structure was grown by Molecular Beam Epitaxy (MBE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. At room temperature and in continuous wave operation, micro-structured 50 µm diameter mesa VCSELs with 10 μm oxidation aperture exhibited more than 1 mW optical power, 2 to 5 mA threshold currents and more than 30 dB side mode suppression ratio at a wavelength of 1090 nm. These structures show slight power reduction but similar electrical performances than unstructured devices. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at extended wavelength range.

Novel optical interconnect devices applying mask-transfer self-written method

NASA Astrophysics Data System (ADS)

Ishizawa, Nobuhiko; Matsuzawa, Yusuke; Tokiwa, Yu; Nakama, Kenichi; Mikami, Osamu

2012-01-01

The introduction of optical interconnect technology is expected to solve problems of conventional electric wiring. One of the promising technologies realizing optical interconnect is the self-written waveguide (SWW) technology with lightcurable resin. We have developed a new technology of the "Mask-Transfer Self-Written (MTSW)" method. This new method enables fabrication of arrayed M x N optical channels at one shot of UV-light. Using this technology, several new optical interconnect devices and connection technologies have been proposed and investigated. In this paper, first, we introduce MTSW method briefly. Next, we show plug-in alignment approach using optical waveguide plugs (OWP) and a micro-hole array (MHA) which are made of the light-curable resin. Easy and high efficiency plug-in alignment between fibers and an optoelectronic-printed wiring board (OE-PWB), between a fiber and a VCSEL, so on will be feasible. Then, we propose a new three-dimensional (3D) branch waveguide. By controlling the irradiating angle through the photomask aperture, it will be possible to fabricate 2-branch and 4-branch waveguides with a certain branch angle. The 3D branch waveguide will be very promising in the future optical interconnects and coupler devices of the multicore optical fiber.

Reconfigurable dynamic all-optical chaotic logic operations in an optically injected VCSEL

NASA Astrophysics Data System (ADS)

Zhong, Dong-Zhou; Xu, Ge-Liang; Luo, Wei; Xiao, Zhen-Zhen

2017-12-01

Not Available Project supported by the National Natural Science Foundation of China (Grant No. 61475120) and the Innovative Projects in Guangdong Colleges and Universities, China (Grant No. 2015KTSCX146).

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Traveling wave electrode design of electro-optically modulated coupled-cavity surface-emitting lasers.

PubMed

Zujewski, Mateusz; Thienpont, Hugo; Panajotov, Krassimir

2012-11-19

We present a novel design of an electro-optically modulated coupled-cavity vertical-cavity surface-emitting laser (CC-VCSEL) with traveling wave electrodes of the modulator cavity, which allows to overcome the RC time constant of a traditional lumped electrode structures. The CC-VCSEL optical design is based on longitudinal mode switching which has recently experimentally demonstrated a record modulation speed. We carry out segmented transmission line electrical design of the modulator cavity in order to compensate for the low impedance of the modulator section and to match the 50 Ω electrical network. We have optimized two types of highly efficient modulator structures reaching -3 dB electrical cut-off frequency of f(cut-off) = 330 GHz with maximum reflection of -22 dB in the range from f(LF) = 100 MHz to f(cut-off) and 77 - 89% modulation efficiency.

Growth and characterization of vertical cavity structures on InP with GaAsSb/AlAsSb Bragg mirrors for 1.55 μm emission

NASA Astrophysics Data System (ADS)

Genty, Frédéric; Almuneau, Guilhem; Chusseau, Laurent; Wilk, Arnaud; Gaillard, Serge; Boissier, Guilhem; Grech, Pierre; Jacquet, Joel

1999-05-01

With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-V precursor sets has been first evaluated. Alloy compositions as well as ease of achieving lattice-matching are compared with both (As 2-Sb 4) or (As 2-Sb 2). Change in the growth mode process that depends on the precursor couple is presumed to influence strongly As and Sb incorporation rates thereby causing difficulties in reaching lattice-matching with Sb 4. The above study has allowed the fabrication of a fully doped 3 λ/2 monolithic Sb-based VCSEL on InP. The main devices performing at 77 K are a 200 nm wide stopband centered at 1.5 μm and a clear cavity resonance at 1.53 μm from which electroluminescence has been observed.

Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor

NASA Astrophysics Data System (ADS)

Mizutani, Mitsuhiro; Teramae, Fumiharu; Takeuchi, Kazutaka; Murase, Tatsunori; Naritsuka, Shigeya; Maruyama, Takahiro

2006-04-01

A vertical-cavity surface-emitting laser (VCSEL) was fabricated using a in situ reflectance monitor by molecular beam epitaxy (MBE). Both the center wavelength of the stop band of the distributed Bragg reflector (DBR) and the resonant wavelength of the optical cavity were successfully controlled using the monitor. However, these wavelengths shifted with decreasing substrate temperature after the growth, which could be reasonably explained by the temperature dependence of refractive index. Therefore, it is necessary to set a target wavelength at a growth temperature, considering the change. The desirable laser performance of the VCSEL fabricated from the wafer indicates marked increases in the controllability and reproducibility of growth with the aid of the in situ reflectance monitor. Since it can directly measure the optical properties of the grown layers, the reflectance monitor greatly helps in the fabrication of a structure with the designed optical performance.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

NASA Astrophysics Data System (ADS)

Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

2015-10-01

We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be <1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with <1 nm RMS roughness. To achieve <1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of <1 nm, along with a high transparency (˜90% at 405 nm) and low resistivity (˜2 × 10-4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs.

Cascade laser applications: trends and challenges

NASA Astrophysics Data System (ADS)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01

When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

Long open-path instrument for simultaneously monitoring of methane, CO2 and water vapor

NASA Astrophysics Data System (ADS)

Simeonov, Valentin; Parlange, Marc

2013-04-01

A new, long open-path instrument for monitoring of path-averaged methane, CO2 and water vapor concentrations will be presented. The instrument is built on the monostatic scheme (transceiver -distant retroreflector). A VCSEL with a central wavelength of 1654 nm is used as a light source. The receiver is built around a 20 cm Newtonian telescope. The design optical path length is 2000 m but can be further extended. To avoid distortions in the shape of the spectral lines caused by atmospheric turbulences they are scanned within 1 µs. The expected concentration resolution for the above mentioned path length is of the order of 2 ppb for methane, 100 ppb for CO2 and 100 ppm for water vapor. The instrument is developed at the Swiss Federal Institute of Technology - Lausanne (EPFL) Switzerland and will be used within the GAW+ CH program for long-term monitoring of background methane and CO2 concentrations in the Swiss Alps. The initial calibration validation tests at EPFL were completed in December 2012 and the instrument will be installed at the beginning of 2013 at the High Altitude Research Station Jungfraujoch (HARSJ). The HARSJ is located at 3580 m ASL and is one of the 24 global GAW stations. One of the goals of the project is to compare path-averaged to the ongoing point measurements of methane in order to identify possible influence of the station. Future deployments of a copy of the instrument include the Canadian arctic and Siberian wetlands. The instrument can be used for ground truthing of satellite observation as well.

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

Visualization and characterization of the acoustic radiation force assisted displacement of particles using an OCT technique (Conference Presentation)

NASA Astrophysics Data System (ADS)

Razani, Marjan; Zam, Azhar; Arezza, Nico J. J.; Wang, Yan J.; Kolios, Michael C.

2016-03-01

In this study, we present a technique to image the enhanced particle displacement generated using an acoustic radiation force (ARF) excitation source. A swept-source OCT (SS-OCT) system with a center wavelength of 1310nm, a bandwidth of ~100nm, and an A-scan rate of 100 kHz (MEMS-VCSEL OCT Thorlabs) was used to detect gold nanoparticle (70nm in diameter) displacement .ARF was applied after the nanoparticles passed through a porous membrane and diffused into a collagen (6% collagen) matrix. B-mode, M-B mode, 3D and Speckle Variance (SV) images were acquired before and after the ARF beam was on. Differential OCT speckle variance images with and without the ARF were used to measure the particle displacement. The images were used to detect the microscopic enhancement of nanoparticle displacement generated by the ARF. Using this OCT imaging technique, the extravasation of particles though a porous membrane and characterization of the enhanced particle displacement in a collagen gel after using an ARF excitation was achieved.

Towards a disposable in vivo miniature implantable fluorescence detector

NASA Astrophysics Data System (ADS)

Bellis, Stephen; Jackson, J. Carlton; Mathewson, Alan

2006-02-01

In the field of fluorescent microscopy, neuronal activity, diabetes and drug treatment are a few of the wide ranging biomedical applications that can be monitored with the use of dye markers. Historically, in-vivo fluorescent detectors consist of implantable probes coupled by optical fibre to sophisticated bench-top instrumentation. These systems typically use laser light to excite the fluorescent marker dies and using sensors, such as the photo-multiplier tube (PMT) or charge coupled devices (CCD), detect the fluorescent light that is filtered from the total excitation. Such systems are large and expensive. In this paper we highlight the first steps toward a fully implantable in-vivo fluorescence detection system. The aim is to make the detector system small, low cost and disposable. The current prototype is a hybrid platform consisting of a vertical cavity surface emitting laser (VCSEL) to provide the excitation and a filtered solid state Geiger mode avalanche photo-diode (APD) to detect the emitted fluorescence. Fluorescence detection requires measurement of extremely low levels of light so the proposed APD detectors combine the ability to count individual photons with the added advantage of being small in size. At present the exciter and sensor are mounted on a hybrid PCB inside a 3mm diameter glass tube.This is wired to external electronics, which provide quenching, photon counting and a PC interface. In this configuration, the set-up can be used for in-vitro experimentation and in-vivo analysis conducted on animals such as mice.

1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

NASA Astrophysics Data System (ADS)

Gilet, Ph.; Pougeoise, E.; Grenouillet, L.; Grosse, Ph.; Olivier, N.; Poncet, S.; Chelnokov, A.; Gérard, J. M.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P.

2007-02-01

In this article, we report our results on 1.3μm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GaInNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain fully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 (micron)m to 16 (micron)m diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1- 10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Di; Liu, Chonghan; Chen, Jinghong

This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. As a result, themore » optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps.« less

Mode suppression in metal filled photonic crystal vertical cavity lasers

NASA Astrophysics Data System (ADS)

Griffin, Benjamin G.; Arbabi, Amir; Goddard, Lynford L.

2012-03-01

Simulation results for an etched air hole photonic crystal (PhC) vertical cavity surface emitting laser (VCSEL) structure with various thicknesses of metal deposited inside the holes are presented. The higher-order modes of the structure are more spread out than the fundamental mode, and penetrate into the metal-filled holes. Due to the lossy nature of the metal, these higher-order modes experience a greater loss than the fundamental mode, resulting in an enhanced side mode suppression ratio (SMSR). A figure of merit for determining which metals would have the greatest impact on the SMSR is derived and validated using a transmission matrix method calculation. A full three-dimensional simulation of the PhC VCSEL structure is performed using the plane wave admittance method, and SMSRs are calculated for increasing metal thicknesses. Of the metals simulated, chromium provided the greatest SMSR enhancement with more than a 4 dB improvement with 500 nm of metal for an operating current of 12 times threshold.

A 4×8-Gbps VCSEL array driver ASIC and integration with a custom array transmitter module for the LHC front-end transmission

DOE PAGES

Guo, Di; Liu, Chonghan; Chen, Jinghong; ...

2016-03-21

This paper describes the design, fabrication and experiment results of a 4×8-Gbps Vertical-Cavity Surface-Emitting Laser (VCSEL) array driver ASIC with the adjustable active-shunt peaking technique and the novel balanced output structure under the Silicon-on-Sapphire (SOS) process, and a custom array optical transmitter module, featuring a compact size of 10 mm×15 mm×5.3 mm. Both the array driver ASIC and the module have been fully tested after integration as a complete parallel transmitter. Optical eye diagram of each channel passes the eye mask at 8 Gbps/ch with adjacent channel working simultaneously with a power consumption of 150 mW/ch. As a result, themore » optical transmission of Bit-Error Rate (BER) less than 10E-12 is achieved at an aggregated data rate of 4×8-Gbps.« less

Low-frequency fluctuations in vertical cavity lasers: Experiments versus Lang-Kobayashi dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torcini, Alessandro; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, via Sansone 1, 50019 Sesto Fiorentino; Barland, Stephane

2006-12-15

The limits of applicability of the Lang-Kobayashi (LK) model for a semiconductor laser with optical feedback are analyzed. The model equations, equipped with realistic values of the parameters, are investigated below the solitary laser threshold where low-frequency fluctuations (LFF's) are usually observed. The numerical findings are compared with experimental data obtained for the selected polarization mode from a vertical cavity surface emitting laser (VCSEL) subject to polarization selective external feedback. The comparison reveals the bounds within which the dynamics of the LK model can be considered as realistic. In particular, it clearly demonstrates that the deterministic LK model, for realisticmore » values of the linewidth enhancement factor {alpha}, reproduces the LFF's only as a transient dynamics towards one of the stationary modes with maximal gain. A reasonable reproduction of real data from VCSEL's can be obtained only by considering the noisy LK or alternatively deterministic LK model for extremely high {alpha} values.« less

Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shuo; Chen, Rongzhang; Nelsen, Bryan

2016-03-15

This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, andmore » limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.« less

Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector

NASA Technical Reports Server (NTRS)

Nelson, Thomas R., Jr.; Loehr, John P.; Fork, Richard L.; Cole, Spencer; Jones, Darryl K.; Keys, Andrew

1999-01-01

There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.

Oxygen measurements at high pressures with vertical cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Wang, J.; Sanders, S. T.; Jeffries, J. B.; Hanson, R. K.

Measurements of oxygen concentration at high pressures (to 10.9 bar) were made using diode-laser absorption of oxygen A-band transitions near 760 nm. The wide current-tuning frequency range (>30 cm-1) of vertical cavity surface-emitting lasers (VCSELs) was exploited to enable the first scanned-wavelength demonstration of diode-laser absorption at high pressures; this strategy is more robust than fixed-wavelength strategies, particularly in hostile environments. The wide tuning range and rapid frequency response of the current tuning were further exploited to demonstrate wavelength-modulation absorption spectroscopy in a high-pressure environment. The minimum detectable absorbance demonstrated, 1×10-4, corresponds to 800 ppm-m oxygen detectivity at room temperature and is limited by etalon noise. The rapid- and wide-frequency tunability of VCSELs should significantly expand the application domain of absorption-based sensors limited in the past by the small current-tuning frequency range (typically <2 cm-1) of conventional edge-emitting diode lasers.

Multigigabit optical transceivers for high-data rate military applications

NASA Astrophysics Data System (ADS)

Catanzaro, Brian E.; Kuznia, Charlie

2012-01-01

Avionics has experienced an ever increasing demand for processing power and communication bandwidth. Currently deployed avionics systems require gigabit communication using opto-electronic transceivers connected with parallel optical fiber. Ultra Communications has developed a series of transceiver solutions combining ASIC technology with flip-chip bonding and advanced opto-mechanical molded optics. Ultra Communications custom high speed ASIC chips are developed using an SoS (silicon on sapphire) process. These circuits are flip chip bonded with sources (VCSEL arrays) and detectors (PIN diodes) to create an Opto-Electronic Integrated Circuit (OEIC). These have been combined with micro-optics assemblies to create transceivers with interfaces to standard fiber array (MT) cabling technology. We present an overview of the demands for transceivers in military applications and how new generation transceivers leverage both previous generation military optical transceivers as well as commercial high performance computing optical transceivers.

Émission spontanée amplifiée (ÉSA) dans une structure à double cavité verticale (Bi-VCSEL)

NASA Astrophysics Data System (ADS)

Boucher, Y.; Gayraud, L.

2004-11-01

Nous présentons une étude théorique de l'Émission Spontanée Amplifiée dans une structure verticale à double cavité, décrite en termes de couplage d'ondes. Chaque cavité y est représentée par un saut de phase, tandis que les puits quantiques sont assimilés à des singularités de Dirac de la permittivité. Les sources sont prises en compte dans le cadre du formalisme des matrices de transfert étendues (3 × 3), qui inclut la saturation des zones actives sous l'effet du champ interne. Dans le plan spectral, celui-ci apparaît, au même titre que le champ émis, filtré par la fonction de transfert bimode de la structure.

GaSb/AlGaSb VCSEL structures and microcavities in the 1.5 μm wavelength range

NASA Astrophysics Data System (ADS)

Koeth, J.; Dietrich, R.; Reithmaier, J. P.; Forchel, A.

Vertical cavity surface emitting laser structures for 1.5 μm wavelength applications were realized by growing AlSb/AlGaSb Bragg mirrors on GaAs substrates with solid source molecular beam epitaxy. Due to the high refractive index contrast between GaSb and AlSb high quality resonators can be made by only 15 layer pairs for each Bragg mirror. Laser operation could be demonstrated by optical pumping with threshold excitation densities of about 500 W/cm2. In laterally deeply etched microcavities with diameters of 5 μm a clear discretization of the optical modes was observed. The lateral confinement effects are compared with results of AlAs/GaAs microcavities designed for 0.9 μm emission wavelength. Due to the longer wavelength a stronger confinement effect can be achieved in AlSb/AlGaSb microcavities for the same lateral dimensions.

Embedded 100 Gbps Photonic Components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuznia, Charlie

This innovation to fiber optic component technology increases the performance, reduces the size and reduces the power consumption of optical communications within dense network systems, such as advanced distributed computing systems and data centers. VCSEL technology is enabling short-reach (< 100 m) and >100 Gbps optical interconnections over multi-mode fiber in commercial applications.

Long open-path TDL based system for monitoring background concentration for deployment at Jungfraujoch High Altitude Research Station- Switzerland

NASA Astrophysics Data System (ADS)

Simeonov, Valentin; van den Bergh, Hubert; Parlange, Marc

2010-05-01

A new, long open-path instrument for monitoring of path-averaged methane and water vapor concentrations will be presented. The instrument is built on the monostatic scheme (transceiver - distant retroreflector). A VCSEL tunable diode laser (TDL) with a central wavelength of 1654 nm is used as a light source. A specially designed, single-cell, hollow-cube retroreflector with 150 mm aperture will be installed at 1200 m from the transceiver in the final deployment at Jungfraujjoch and 100 mm retroreflectors will be used in the other applications. The receiver is built around a 20 cm Newtonian telescope. To avoid distortions in the shape of a methane line, caused by atmospheric turbulences, the line is scanned within 1 µs. Fast InGaAs photodiodes and 200 MHz are used to achieve this scanning rate. The expected concentration resolution for the above mentioned path lengths is of the order of 2 ppb. The instrument is developed at the Swiss Federal Institute of Technology - Lausanne (EPFL) Switzerland and will be used within the GAW+ CH program for long-term monitoring of background methane concentration in the Swiss Alps. After completing the initial tests at EPFL the instrument will be installed in 2012 at the High Altitude Research Station Jungfraujoch (HARSJ) located at 3580 m ASL. The HARSJ is one of the 24 global GAW stations and carries on continuous observations of a number of trace gasses, including methane. One of the goals of the project is to compare path-averaged to ongoing point measurements of methane in order to identify possible influence of the station. Future deployments of a copy of the instrument include the Colombian part of Amazonia and Siberian wetlands.

Phase-Locking and Coherent Power Combining of Broadband Linearly Chirped Optical Waves

DTIC Science & Technology

2012-11-05

ensure path-length matching, and we estimate an accuracy of ±2 cm. Fiber-coupled acoustooptic modulators ( Brimrose Corporation) with a nominal...was performed using the VCSEL-based SFL with a chirp rate of ±2×1014 Hz/s, polarization maintaining fiber-optic components, and an AOFS ( Brimrose

3D optimization of a polymer MOEMS for active focusing of VCSEL beam

NASA Astrophysics Data System (ADS)

Abada, S.; Camps, T.; Reig, B.; Doucet, JB; Daran, E.; Bardinal, V.

2014-05-01

We report on the optimized design of a polymer-based actuator that can be directly integrated on a VCSEL for vertical beam scanning. Its operation principle is based on the vertical displacement of a SU-8 membrane including a polymer microlens. Under an applied thermal gradient, the membrane is shifted vertically due to thermal expansion in the actuation arms induced by Joule effect. This leads to a modification of microlens position and thus to a vertical scan of the laser beam. Membrane vertical displacements as high as 8μm for only 3V applied were recently experimentally obtained. To explain these performances, we developed a comprehensive tri-dimensional thermo-mechanical model that takes into account SU-8 material properties and precise MOEMS geometry. Out-of-plane mechanical coefficients and thermal conductivity were thus integrated in our 3D model (COMSOL Multiphysics). Vertical displacements extracted from these data for different actuation powers were successfully compared to experimental values, validating this modelling tool. Thereby, it was exploited to increase MOEMS electrothermal performance by a factor higher than 5.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Transverse Mode Dynamics and Ultrafast Modulation of Vertical-Cavity Surface-Emitting Lasers

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

2002-01-01

We show that multiple transverse mode dynamics of VCSELs (Vertical-Cavity Surface-Emitting Lasers) can be utilized to generate ultrafast intensity modulation at a frequency over 100 GHz, much higher than the relaxation oscillation frequency. Such multimode beating can be greatly enhanced by taking laser output from part of the output facet.

High Bandwidth-Efficiency Resonant Cavity Enhanced Schottky Photodiodes for 800-850 nm Wavelength Operation

DTIC Science & Technology

1998-05-25

at least 50 nm wide centered around 830 nm wavelength. The layers are grown by molecular beam epitaxy on a semi- insulating GaAs substrate. The...limited by the material properties. With the advent of GaAs vertical-cavity surface-emitting lasers ~ VCSEL !,2 the 800–850 nm wavelength range has recently

Readout systems for inner detectors at the LHC and SLHC

NASA Astrophysics Data System (ADS)

Issever, Cigdem

2006-12-01

A general overview of the optoelectronic readout and control systems of the ATLAS and CMS inner detectors is given. The talk will also cover challenges and issues of future optoelectronic readout systems at the upgraded LHC (SLHC). First results of radiation tests of VCSELs and optical fibres which were irradiated up to SLHC fluences will be presented.

GHz-THz Electronics

DTIC Science & Technology

2013-03-07

Approved for public release; distribution is unlimited Molecular Beam Epitaxy of α-Sn on InSb Arnold Kiefer & Bruce Claflin, AFRL/RYDH Unique...Schlom & Kyle Shen (Cornell) Tight coupling of molecular - beam epitaxy (MBE) and angle-resolved photoelectron spectroscopy (ARPES) reveals metal...Materials & Devices Beyond Graphene Jim Hwang, Gernot Pomrenke, Joycelyn Harrison & Misoon Mah (AFOSR) 3D VCSEL Heterostructure h-BN/Graphene/h-BN

FDM and DMT performance comparison in high capacity point-to-point fibre links for intra/inter-datacentre connections

NASA Astrophysics Data System (ADS)

Gatto, A.; Parolari, P.; Boffi, P.

2018-05-01

Frequency division multiplexing (FDM) is attractive to achieve high capacities in multiple access networks characterized by direct modulation and direct detection. In this paper we take into account point-to-point intra- and inter-datacenter connections to understand the performance of FDM operation compared with the ones achievable with standard multiple carrier modulation approach based on discrete multitone (DMT). DMT and FDM allow to match the non-uniform and bandwidth-limited response of the system under test, associated with the employment of low-cost directly-modulated sources, such as VCSELs with high-frequency chirp, and with fibre-propagation in presence of chromatic dispersion. While for very short distances typical of intra-datacentre communications, the huge number of DMT subcarriers permits to increase the transported capacity with respect to the FDM employment, in case of few tens-km reaches typical of inter-datacentre connections, the capabilities of FDM are more evident, providing system performance similar to the case of DMT application.

In vivo cross-sectional imaging of the phonating larynx using long-range Doppler optical coherence tomography

NASA Astrophysics Data System (ADS)

Coughlan, Carolyn A.; Chou, Li-Dek; Jing, Joseph C.; Chen, Jason J.; Rangarajan, Swathi; Chang, Theodore H.; Sharma, Giriraj K.; Cho, Kyoungrai; Lee, Donghoon; Goddard, Julie A.; Chen, Zhongping; Wong, Brian J. F.

2016-03-01

Diagnosis and treatment of vocal fold lesions has been a long-evolving science for the otolaryngologist. Contemporary practice requires biopsy of a glottal lesion in the operating room under general anesthesia for diagnosis. Current in-office technology is limited to visualizing the surface of the vocal folds with fiber-optic or rigid endoscopy and using stroboscopic or high-speed video to infer information about submucosal processes. Previous efforts using optical coherence tomography (OCT) have been limited by small working distances and imaging ranges. Here we report the first full field, high-speed, and long-range OCT images of awake patients’ vocal folds as well as cross-sectional video and Doppler analysis of their vocal fold motions during phonation. These vertical-cavity surface-emitting laser source (VCSEL) OCT images offer depth resolved, high-resolution, high-speed, and panoramic images of both the true and false vocal folds. This technology has the potential to revolutionize in-office imaging of the larynx.

Investigations of Optical Properties of Active Regions in Vertical Cavity Surface Emitting Lasers Grown by MBE

DTIC Science & Technology

2002-06-03

Molecular beam epitaxy ; Planar microcavities; Vertical cavity surface emitting lasers 1... Vertical Cavity Surface Emitting Lasers Grown by MBE DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the...S-581 83 Linkiping, Sweden Abstract The design of the vertical cavity surface emitting lasers ( VCSELs ) needs proper tuning of many

VCSEL based Faraday rotation spectroscopy at 762nm for battery powered trace molecular oxygen detection

NASA Astrophysics Data System (ADS)

So, Stephen; Wysocki, Gerard

2010-02-01

Faraday Rotation Spectroscopy (FRS) is a polarization based spectroscopic technique which can provide higher sensitivity concentration measurements of paramagnetic gases and free radicals than direct absorption spectroscopic techniques. We have developed sensor systems which require only 0.2W to perform TDLAS (tunable diode laser absorption spectroscopy), and can additionally be quickly duty cycled, enabling operation in wireless sensor networks of laser-based trace gas sensors We adapted our integrated TDLAS electronics to perform FRS in a compact and more sensitive system for quantification of molecular oxygen (O2) using a 762.3nm VCSEL in the A band. Using an AC magnetic field, we demonstrate detector noise dominated performance, achieving 2.1×10-6/Hz1/2 equivalent detectable fractional absorption and a minimum detection limit of 462 ppmv O2 in 1 second in a 15cm path. At longer paths and integration times, such a sensor will enable oxygen measurements at biotic respiration levels (<1ppmv) to measure CO2 - O2 exchange for mapping natural exchange of greenhouse gases. Potential improvement of detection limits by increasing various system performance parameters is described.

Novel electro-optical coupling technique for magnetic resonance-compatible positron emission tomography detectors.

PubMed

Olcott, Peter D; Peng, Hao; Levin, Craig S

2009-01-01

A new magnetic resonance imaging (MRI)-compatible positron emission tomography (PET) detector design is being developed that uses electro-optical coupling to bring the amplitude and arrival time information of high-speed PET detector scintillation pulses out of an MRI system. The electro-optical coupling technology consists of a magnetically insensitive photodetector output signal connected to a nonmagnetic vertical cavity surface emitting laser (VCSEL) diode that is coupled to a multimode optical fiber. This scheme essentially acts as an optical wire with no influence on the MRI system. To test the feasibility of this approach, a lutetium-yttrium oxyorthosilicate crystal coupled to a single pixel of a solid-state photomultiplier array was placed in coincidence with a lutetium oxyorthosilicate crystal coupled to a fast photomultiplier tube with both the new nonmagnetic VCSEL coupling and the standard coaxial cable signal transmission scheme. No significant change was observed in 511 keV photopeak energy resolution and coincidence time resolution. This electro-optical coupling technology enables an MRI-compatible PET block detector to have a reduced electromagnetic footprint compared with the signal transmission schemes deployed in the current MRI/PET designs.

Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

NASA Astrophysics Data System (ADS)

King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

1998-04-01

We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

NASA Astrophysics Data System (ADS)

Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

2004-10-01

Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.

Performance of a fire detector based on a compact laser spectroscopic carbon monoxide sensor.

PubMed

Hangauer, A; Chen, J; Strzoda, R; Fleischer, M; Amann, M-C

2014-06-02

In this paper we show the suitability of a miniaturized tunable diode laser spectroscopy (TDLS)-based carbon-monoxide (CO) sensor for fire detection applications. The sensor utilizes a vertical-cavity surface-emitting laser (VCSEL) and inherent calibration scheme with reference gas filled in the photodetector housing. The fire-detection experiments are carried out under realistic conditions as described in the European standard EN54. The CO generation of all class C fires (according to EN54) could be well resolved. The cross-sensitivity to other substances was found to be very low: the maximum CO false response from cigarette smoke, hairspray and general aerosols reaches a low value of a few μL/L and only if the substance is directly applied into the sensor gas inlet. Therefore this sensor overcomes the disadvantage of high false alarm rate given by smoke detectors and is also in small size which is suitable for household and industrial applications. Hence, the VCSEL-based TDLS sensor is shown to have sufficient performance for fire-detection. It has advantages such as capability for fail-safe operation and, low cross-sensitivities as compared to existing point fire detector technology which is presently limited by these factors.

A VCSEL based system for on-site monitoring of low level methane emission

NASA Astrophysics Data System (ADS)

Kannath, A.; Hodgkinson, J.; Gillard, R. G.; Riley, R. J.; Tatam, R. P.

2011-03-01

Continuous monitoring of methane emissions has assumed greater significance in the recent past due to increasing focus on global warming issues. Many industries have also identified the need for ppm level methane measurement as a means of gaining carbon credits. Conventional instruments based on NDIR spectroscopy are unable to offer the high selectivity and sensitivity required for such measurements. Here we discuss the development of a robust VCSEL based system for accurate low level measurements of methane. A possible area of application is the measurement of residual methane whilst monitoring the output of flare stacks and exhaust gases from methane combustion engines. The system employs a Wavelength Modulation Spectroscopy (WMS) scheme with second harmonic detection at 1651 nm. Optimum modulation frequency and ramp rates were chosen to maintain high resolution and fast response times which are vital for the intended application. Advanced data processing techniques were used to achieve long term sensitivity of the order of 10-5 in absorbance. The system is immune to cross interference from other gases and its inherent design features makes it ideal for large scale commercial production. The instrument maintains its calibration and offers a completely automated continuous monitoring solution for remote on site deployment.

Ultrasound imaging using all-optical power and signal transfer in catheters (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pekar, Martin; van der Mark, Martin B.

2017-02-01

Smart medical catheters face a connectivity challenge. An example is found in ultrasound imaging where the supply of power at the distal end and the signal transmission requires many thin and fragile wires in order to keep the catheter thin and flexible and this leads to a relatively high cost of production. We have built a fully functional benchtop demonstrator that is immediately scalable to catheter dimensions, in which all electrical wires are replaced by just two optical fibers. We show signal transfer of synthetic aperture ultrasound images as well as photovoltaic conversion to supply all electronics. The absence of conductors provides excellent galvanic isolation as well as RF and MRI compatibility and the simple design utilizing off the shelf components holds a promise of cost effectiveness all of which may help translation of these advanced devices into the clinic. We show photovoltaic conversion of 405 nm light to 45 V and 1.8 V by two blue LEDs as well as 200 MHz broad-band signal transfer using modulated 850 nm VCSEL light. Synthetic aperture ultrasound images are acquired at a frequency of 12 MHz with a collapse-mode capacitive-micromachined ultrasonic transducer. Bandwidth, noise level and dynamic range are nearly identical as shown in comparison of the images acquired with the optical link and its electrical equivalent. In conclusion, we have successfully demonstrated low-cost and scalable optical signal and power transmission for an ultrasound imaging system enjoying intrinsic RF / MRI compatibility and galvanic isolation.

OLED lighting devices having multi element light extraction and luminescence conversion layer

DOEpatents

Krummacher, Benjamin Claus; Antoniadis, Homer

2010-11-16

An apparatus such as a light source has a multi element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

Device structure for OLED light device having multi element light extraction and luminescence conversion layer

DOEpatents

Antoniadis,; Homer, Krummacher [Mountain View, CA; Claus, Benjamin [Regensburg, DE

2008-01-22

An apparatus such as a light source has a multi-element light extraction and luminescence conversion layer disposed over a transparent layer of the light source and on the exterior of said light source. The multi-element light extraction and luminescence conversion layer includes a plurality of light extraction elements and a plurality of luminescence conversion elements. The light extraction elements diffuses the light from the light source while luminescence conversion elements absorbs a first spectrum of light from said light source and emits a second spectrum of light.

Research in the Optical Sciences

DTIC Science & Technology

1994-02-01

Gain Asymmetry and the Generation of New Frequencies2 "’ When a stable coherent beam is injected into a VCSEL that is lasing just above threshold, we... optical microscope was developed and tested. High quality single-crystal layers of beryllium were grown on germanium by molecular beam epitaxy (MBE... OPTICAL ELEWENTS FOR X-UV WAVELENGTHS FALCO AND SLAUGHTEM indicate an increase in crystalline quality as T is increased. However, samples deposited at

Design and Fabrication of Micro-Electro-Mechanical Structures for Tunable Micro-Optical Devices

DTIC Science & Technology

2002-03-01

purposes. Figure 2.6 shows the resulting Voltage vs. displacement curve for a 150 µm × 150 µm piston micromirror with four 150 µm flexures, and a 2 µm...2-6 2.3.2 Piston Micromirrors . . . . . . . . . . . . . . . . . . 2-7 2.4 VCSEL Design...Schematic view of basic electrostatic piston micromirror [4]. . . . . 2-7 2.5. Deflection of a flexure beam with a single fixed end [22]. . . . . . . 2

High-frequency polarization dynamics in spin-lasers: pushing the limits

NASA Astrophysics Data System (ADS)

Gerhardt, Nils C.; Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Hofmann, Martin R.

2017-09-01

While the high-frequency performance of conventional lasers is limited by the coupled carrier-photon dynamics, spin-polarized lasers have a high potential to overcome this limitation and to push the direct modulation bandwidth beyond 100 GHz. The key is to utilize the ultrafast polarization dynamics in spin-polarized vertical cavity surface-emitting lasers (spin-VCSELs) which is decoupled from the intensity dynamics and its fundamental limitations. The polarization dynamics in such devices, characterized by the polarization oscillation resonance frequency, is mainly determined by the amount of birefringence in the cavity. Using an approach for manipulating the birefringence via mechanical strain we were able to increase the polarization dynamics to resonance frequencies of more than 40 GHz. Up to now these values are only limited by the setup to induce birefringence and do not reflect any fundamental limitations. Taking our record results for the birefringence-induced mode splitting of more than 250 GHz into account, the concept has the potential to provide polarization modulation in spin-VCSELs with modulation frequencies far beyond 100 GHz. This makes them ideal devices for next-generation fast optical interconnects. In this paper we present experimental results for ultrafast polarization dynamics up to 50 GHz and compare them to numerical simulations.

Backscatter absorption gas imaging systems and light sources therefore

DOEpatents

Kulp, Thomas Jan [Livermore, CA; Kliner, Dahv A. V. [San Ramon, CA; Sommers, Ricky [Oakley, CA; Goers, Uta-Barbara [Campbell, NY; Armstrong, Karla M [Livermore, CA

2006-12-19

The location of gases that are not visible to the unaided human eye can be determined using tuned light sources that spectroscopically probe the gases and cameras that can provide images corresponding to the absorption of the gases. The present invention is a light source for a backscatter absorption gas imaging (BAGI) system, and a light source incorporating the light source, that can be used to remotely detect and produce images of "invisible" gases. The inventive light source has a light producing element, an optical amplifier, and an optical parametric oscillator to generate wavelength tunable light in the IR. By using a multi-mode light source and an amplifier that operates using 915 nm pump sources, the power consumption of the light source is reduced to a level that can be operated by batteries for long periods of time. In addition, the light source is tunable over the absorption bands of many hydrocarbons, making it useful for detecting hazardous gases.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Advanced Fire Detector for Space Applications

NASA Technical Reports Server (NTRS)

Kutzner, Joerg

2012-01-01

A document discusses an optical carbon monoxide sensor for early fire detection. During the sensor development, a concept was implemented to allow reliable carbon monoxide detection in the presence of interfering absorption signals. Methane interference is present in the operating wavelength range of the developed prototype sensor for carbon monoxide detection. The operating parameters of the prototype sensor have been optimized so that interference with methane is minimized. In addition, simultaneous measurement of methane is implemented, and the instrument automatically corrects the carbon monoxide signal at high methane concentrations. This is possible because VCSELs (vertical cavity surface emitting lasers) with extended current tuning capabilities are implemented in the optical device. The tuning capabilities of these new laser sources are sufficient to cover the wavelength range of several absorption lines. The delivered carbon monoxide sensor (COMA 1) reliably measures low carbon monoxide levels even in the presence of high methane signals. The signal bleed-over is determined during system calibration and is then accounted for in the system parameters. The sensor reports carbon monoxide concentrations reliably for (interfering) methane concentrations up to several thousand parts per million.

Wavelength shifting of intra-cavity photons: Adiabatic wavelength tuning in rapidly wavelength-swept lasers

PubMed Central

Jirauschek, Christian; Huber, Robert

2015-01-01

We analyze the physics behind the newest generation of rapidly wavelength tunable sources for optical coherence tomography (OCT), retaining a single longitudinal cavity mode during operation without repeated build up of lasing. In this context, we theoretically investigate the currently existing concepts of rapidly wavelength-swept lasers based on tuning of the cavity length or refractive index, leading to an altered optical path length inside the resonator. Specifically, we consider vertical-cavity surface-emitting lasers (VCSELs) with microelectromechanical system (MEMS) mirrors as well as Fourier domain mode-locked (FDML) and Vernier-tuned distributed Bragg reflector (VT-DBR) lasers. Based on heuristic arguments and exact analytical solutions of Maxwell’s equations for a fundamental laser resonator model, we show that adiabatic wavelength tuning is achieved, i.e., hopping between cavity modes associated with a repeated build up of lasing is avoided, and the photon number is conserved. As a consequence, no fundamental limit exists for the wavelength tuning speed, in principle enabling wide-range wavelength sweeps at arbitrary tuning speeds with narrow instantaneous linewidth. PMID:26203373

Polarization switching detection method using a ferroelectric liquid crystal for dichroic atomic vapor laser lock frequency stabilization techniques.

PubMed

Dudzik, Grzegorz; Rzepka, Janusz; Abramski, Krzysztof M

2015-04-01

We present a concept of the polarization switching detection method implemented for frequency-stabilized lasers, called the polarization switching dichroic atomic vapor laser lock (PSDAVLL) technique. It is a combination of the well-known dichroic atomic vapor laser lock method for laser frequency stabilization with a synchronous detection system based on the surface-stabilized ferroelectric liquid crystal (SSFLC).The SSFLC is a polarization switch and quarter wave-plate component. This technique provides a 9.6 dB better dynamic range ratio (DNR) than the well-known two-photodiode detection configuration known as the balanced polarimeter. This paper describes the proposed method used practically in the VCSEL laser frequency stabilization system. The applied PSDAVLL method has allowed us to obtain a frequency stability of 2.7×10⁻⁹ and a reproducibility of 1.2×10⁻⁸, with a DNR of detected signals of around 81 dB. It has been shown that PSDAVLL might be successfully used as a method for spectra-stable laser sources.

Position Index for the Matrix Light Source

NASA Astrophysics Data System (ADS)

Takahashi, Hiroshi; Kobayashi, Yoshinori; Onda, Shou; Irikura, Takashi

It is expected that in the future white LEDs will be widely used in practical applications including replacing conventional lighting in offices and homes. The white LED light source of matrix arrangement is also considered in it. On the other hand, although now the unified glare rating (UGR) is widely used for evaluation of the discomfort glare of the interior lighting, UGR is a thing for a uniform light source, and its application to the matrix light sources that have non-uniform luminance has not been considered. The aim of this study is to clarify the position index which is one of element of UGR for the matrix light source. In this case, to apply the position index for a matrix light source to UGR, the concept of the revised position index is invented. As the preliminary experiment, method for measuring the position index was conducted, and as the experiment, position index for the matrix light source was conducted and compared with the uniform light source. The results of the experiments show that the position index is decided by the relative angle between line of sight and light source. It is also found that the matrix light source have larger position index than uniform light source. Furthermore, it is shown that the discomfort glare caused by a matrix light source can be evaluated by applying the revised position index to the UGR.

Utility and safety of a novel surgical microscope laser light source

PubMed Central

Bakhit, Mudathir S.; Suzuki, Kyouichi; Sakuma, Jun; Fujii, Masazumi; Murakami, Yuta; Ito, Yuhei; Sugano, Tetsuo; Saito, Kiyoshi

2018-01-01

Objective Tissue injuries caused by the thermal effects of xenon light microscopes have previously been reported. Due to this, the development of a safe microscope light source became a necessity. A newly developed laser light source is evaluated regarding its effectiveness and safety as an alternative to conventional xenon light source. Methods We developed and tested a new laser light source for surgical microscopes. Four experiments were conducted to compare xenon and laser lights: 1) visual luminance comparison, 2) luminous and light chromaticity measurements, 3) examination and analysis of visual fatigue, and 4) comparison of focal temperature elevation due to light source illumination using porcine muscle samples. Results Results revealed that the laser light could be used at a lower illumination value than the xenon light (p < 0.01). There was no significant difference in visual fatigue status between the laser light and the xenon light. The laser light was superior to the xenon light regarding luminous intensity and color chromaticity. The focal temperature elevation of the muscle samples was significantly higher when irradiated with xenon light in vitro than with laser light (p < 0.01). Conclusion The newly developed laser light source is more efficient and safer than a conventional xenon light source. It lacks harmful ultraviolet waves, has a longer lifespan, a lower focal temperature than that of other light sources, a wide range of brightness and color production, and improved safety for the user’s vision. Further clinical trials are necessary to validate the impact of this new light source on the patient’s outcome and prognosis. PMID:29390016

Roughness sensor based on a compact optoelectronic emitter-receiver modules

NASA Astrophysics Data System (ADS)

Will, Matthias; Brodersen, Olaf; Steinke, Arndt

2012-04-01

In construction and manufacturing the surface roughness and their control plays a major role. The mechanical test probes are used in many applications, because the advantage of the higher resolution of optical systems often plays no role. But in all cases the measurement systems were uses outside of fabrication processes due to the complex and expensive equipment. To overcome these we developed a roughness sensor suitable for an automated control of machined surfaces. The sensor is able to handle high throughput and parallel systems is due to the low cost available. Our solution is compact stand-alone sensors that can be simple integrated in existing systems like machine tools or transport systems. The sensor is based on a diode laser, focusing optics and a special silicon photo diode array in a stable housing. The single-mode VCSEL at 670 nm emission wavelength is focused on the surface of the sample at distance of 5mm. The light was reflected from the test surface and detected with an 8-channel photodiode array. The position of the main reflex allows an optimization of the sensor distance to the surface. During the movement of the sample with a known velocity roughness depended signals over time were recorded at 8 cannels. This allows a detection of the angular distribution of the scattered light in combination of position dependent refection. It was shown here that we be able to achieve resolution below the spot diameter (30μm FWHM). We verify the sensor capabilities for real world applications on drilled samples with typical roughness variations in micro meter range.

Method and apparatus for acquisition and tracking of light sources in a transient event rich environment

NASA Technical Reports Server (NTRS)

Bolin, Kenneth (Inventor); Flynn, David (Inventor); Fowski, Walter (Inventor); Miklus, Kenneth (Inventor); Kissh, Frank (Inventor); Abreu, Rene (Inventor)

1993-01-01

A method and apparatus for tracking a light source in a transient event rich environment locks on to a light source incident on a field-of-view 1 of a charge-coupled-device (CCD) array 6, validates the permanence of said light source and transmits data relating to the brilliance and location of said light source if said light source is determined to be permanent.

Non-contact pumping of light emitters via non-radiative energy transfer

DOEpatents

Klimov, Victor I.; Achermann, Marc

2010-01-05

A light emitting device is disclosed including a primary light source having a defined emission photon energy output, and, a light emitting material situated near to said primary light source, said light emitting material having an absorption onset equal to or less in photon energy than the emission photon energy output of the primary light source whereby non-radiative energy transfer from said primary light source to said light emitting material can occur yielding light emission from said light emitting material.

Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

DTIC Science & Technology

2011-12-01

communication links using VCSEL arrays [1, 2], medical imaging using super luminescent diodes [3], and tunable lasers capable of remotely sensing...increase the efficiency of solar cells [6, 7, 8], vastly improve photo detector sensitivity [9], and provide optical memory storage densities predicted...semiconductor lasers” Applied Physics B: Lasers and Optics, Volume 90, Number 2, 2008, Pages 339-343. 6. Nozik, A.J. “Quantum dot solar cells

Bistable Vertical-Cavity Surface-Emitting Laser. Structures on GaAs and Si Substrates

DTIC Science & Technology

1994-06-01

vertical - cavity surface - emitting lasers ( VCSELs ) [1,5,6 of publications below], fabrication processes to realize low...May 91 through 1 June 94 R&T Number: Contract / Grant Number: N00014-91-J-1952 Contract / Grant Title: Bistable Vertical - Cavity Surface - Emitting Laser ...T.J. Rogers, B.G. Streetman, S.C. Smith, and R.D. Burnham, "Cascadabity of an Optically Iathing Vertical - Cavity Surface - Emitting Laser

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting lasers ( VCSELs ) [1, 2, 3]. They are also being... molecular beam epitaxy ( MBE ) [5, 6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE -grown A1GaAs layers are sometimes pseudo or digital...Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not

Heating device for semiconductor wafers

DOEpatents

Vosen, Steven R.

1999-01-01

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Heating device for semiconductor wafers

DOEpatents

Vosen, S.R.

1999-07-27

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1993-12-09

during the growth of the cavity spacer region using the fact that the molecular beam epitaxy growth of GaAs is highly sensitive to the substrate... molecular beam epitaxy (MBE) crystal growth, the GaAs growth rate is highly sensitive to the substrate temperature above 650"C (2], a GaAs/AIGaAs... epitaxial growth technique to make reproducible and repeatable multi-wavelength VCSEL arrays. Our approach to fabricate the spatially graded layer

3-D integrated heterogeneous intra-chip free-space optical interconnect.

PubMed

Ciftcioglu, Berkehan; Berman, Rebecca; Wang, Shang; Hu, Jianyun; Savidis, Ioannis; Jain, Manish; Moore, Duncan; Huang, Michael; Friedman, Eby G; Wicks, Gary; Wu, Hui

2012-02-13

This paper presents the first chip-scale demonstration of an intra-chip free-space optical interconnect (FSOI) we recently proposed. This interconnect system provides point-to-point free-space optical links between any two communication nodes, and hence constructs an all-to-all intra-chip communication fabric, which can be extended for inter-chip communications as well. Unlike electrical and other waveguide-based optical interconnects, FSOI exhibits low latency, high energy efficiency, and large bandwidth density, and hence can significantly improve the performance of future many-core chips. In this paper, we evaluate the performance of the proposed FSOI interconnect, and compare it to a waveguide-based optical interconnect with wavelength division multiplexing (WDM). It shows that the FSOI system can achieve significantly lower loss and higher energy efficiency than the WDM system, even with optimistic assumptions for the latter. A 1×1-cm2 chip prototype is fabricated on a germanium substrate with integrated photodetectors. Commercial 850-nm GaAs vertical-cavity-surface-emitting-lasers (VCSELs) and fabricated fused silica microlenses are 3-D integrated on top of the substrate. At 1.4-cm distance, the measured optical transmission loss is 5 dB, the crosstalk is less than -20 dB, and the electrical-to-electrical bandwidth is 3.3 GHz. The latter is mainly limited by the 5-GHz VCSEL.

Power-efficient dual-rate optical transceiver.

PubMed

Zuo, Yongrong; Kiamiley, Fouad E; Wang, Xiaoqing; Gui, Ping; Ekman, Jeremy; Wang, Xingle; McFadden, Michael J; Haney, Michael W

2005-11-20

A dual-rate (2 Gbit/s and 100 Mbit/s) optical transceiver designed for power-efficient connections within and between modern high-speed digital systems is described. The transceiver can dynamically adjust its data rate according to performance requirements, allowing for power-on-demand operation. Dynamic power management permits energy saving and lowers device operating temperatures, improving the reliability and lifetime of optoelectronic-devices such as vertical-cavity surface-emitting lasers (VCSELs). To implement dual-rate functionality, we include in the transmitter and receiver circuits separate high-speed and low-power data path modules. The high-speed module is designed for gigabit operation to achieve high bandwidth. A simpler low-power module is designed for megabit data transmission with low power consumption. The transceiver is fabricated in a 0.5 microm silicon-on-sapphire complementary metal-oxide semiconductor. The VCSEL and photodetector devices are attached to the transceiver's integrated circuit by flip-chip bonding. A free-space optical link system is constructed to demonstrate correct dual-rate functionality. Experimental results show reliable link operation at 2 Gbit/s and 100 Mbit/s data transfer rates with approximately 104 and approximately 9 mW power consumption, respectively. The transceiver's switching time between these two data rates is demonstrated as 10 micros, which is limited by on-chip register reconfiguration time. Improvement of this switching time can be obtained by use of dedicated input-output pads for dual-rate control signals.

Continuous wave and modulation performance of 1550nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs

NASA Astrophysics Data System (ADS)

Babichev, A. V.; Karachinsky, L. Ya.; Novikov, I. I.; Gladyshev, A. G.; Mikhailov, S.; Iakovlev, V.; Sirbu, A.; Stepniak, G.; Chorchos, L.; Turkiewicz, J. P.; Agustin, M.; Ledentsov, N. N.; Voropaev, K. O.; Ionov, A. S.; Egorov, A. Yu.

2017-02-01

We report for the first time on wafer-fused InGaAs-InP/AlGaAs-GaAs 1550 nm vertical-cavity surface-emitting lasers (VCSELs) incorporating a InAlGaAs/InP MQW active region with re-grown tunnel junction sandwiched between top and bottom undoped AlGaAs/GaAs distributed Bragg reflectors (DBRs) all grown by molecular beam epitaxy. InP-based active region includes seven compressively strained quantum wells (2.8 nm) optimized to provide high differential gain. Devices with this active region demonstrate lasing threshold current < 2.5 mA and output optical power > 2 mW in the temperature range of 10-70°C. The wall-plug efficiency (WPE) value-reaches 20 %. Lasing spectra show single mode CW operation with a longitudinal side mode suppression ratio (SMSR) up to 45 dB at > 2 mW output power. Small signal modulation response measurements show a 3-dB modulation bandwidth of 9 GHz at pump current of 10 mA and a D-factor value of 3 GHz/(mA)1/2. Open-eye diagram at 30 Gb/s of standard NRZ is demonstrated. Achieved CW and modulation performance is quite sufficient for fiber to the home (FTTH) applications where very large volumes of low-cost lasers are required.

Laser tweezer actuated microphotonic array devices for high resolution imaging and analysis in chip-based biosystems

NASA Astrophysics Data System (ADS)

Birkbeck, Aaron L.

A new technology is developed that functionally integrates arrays of lasers and micro-optics into microfluidic systems for the purpose of imaging, analyzing, and manipulating objects and biological cells. In general, the devices and technologies emerging from this area either lack functionality through the reliance on mechanical systems or provide a serial-based, time consuming approach. As compared to the current state of art, our all-optical design methodology has several distinguishing features, such as parallelism, high efficiency, low power, auto-alignment, and high yield fabrication methods, which all contribute to minimizing the cost of the integration process. The potential use of vertical cavity surface emitting lasers (VCSELs) for the creation of two-dimensional arrays of laser optical tweezers that perform independently controlled, parallel capture, and transport of large numbers of individual objects and biological cells is investigated. One of the primary biological applications for which VCSEL array sourced laser optical tweezers are considered is the formation of engineered tissues through the manipulation and spatial arrangement of different types of cells in a co-culture. Creating devices that combine laser optical tweezers with select micro-optical components permits optical imaging and analysis functions to take place inside the microfluidic channel. One such device is a micro-optical spatial filter whose motion and alignment is controlled using a laser optical tweezer. Unlike conventional spatial filter systems, our device utilizes a refractive optical element that is directly incorporated onto the lithographically patterned spatial filter. This allows the micro-optical spatial filter to automatically align itself in three-dimensions to the focal point of the microscope objective, where it then filters out the higher frequency additive noise components present in the laser beam. As a means of performing high resolution imaging in the microfluidic channel, we developed a novel technique that integrates the capacity of a laser tweezer to optically trap and manipulate objects in three-dimensions with the resolution-enhanced imaging capabilities of a solid immersion lens (SIL). In our design, the SIL is a free-floating device whose imaging beam, motion control and alignment is provided by a laser optical tweezer, which allows the microfluidic SIL to image in areas that are inaccessible to traditional solid immersion microscopes.

Microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2002-01-01

An apparatus for packaging of microelectronic devices, including an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can include a cofired ceramic frame or body. The package can have an internal stepped structure made of one or more plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination.

Nonimaging Optical Illumination System

DOEpatents

Winston, Roland

1994-08-02

A nonimaging illumination optical device for producing selected intensity output over an angular range. The device includes a light reflecting surface (24, 26) around a light source (22) which is disposed opposite the aperture opening of the light reflecting surface (24, 26). The light source (22) has a characteristic dimension which is small relative to one or more of the distance from the light source (22) to the light reflecting surface (24, 26) or the angle subtended by the light source (22) at the light reflecting surface (24, 26).

Development of a circadian light source

NASA Astrophysics Data System (ADS)

Nicol, David B.; Ferguson, Ian T.

2002-11-01

Solid state lighting presents a new paradigm for lighting - controllability. Certain characteristics of the lighting environment can be manipulated, because of the possibility of using multiple LEDs of different emission wavelengths as the illumination source. This will provide a new, versatile, general illumination source due to the ability to vary the spectral power distribution. New effects beyond the visual may be achieved that are not possible with conventional light sources. Illumination has long been the primary function of lighting but as the lighting industry has matured the psychological aspects of lighting have been considered by designers; for example, choosing a particular lighting distribution or color variation in retail applications. The next step in the evolution of light is to consider the physiological effects of lighting that cause biological changes in a person within the environment. This work presents the development of a source that may have important bearing on this area of lighting. A circadian light source has been developed to provide an illumination source that works by modulating its correlated color temperature to mimic the changes in natural daylight through the day. In addition, this source can cause or control physiological effects for a person illuminated by it. The importance of this is seen in the human circadian rhythm's peak response corresponding to blue light at ~460 nm which corresponds to the primary spectral difference in increasing color temperature. The device works by adding blue light to a broadband source or mixing polychromatic light to mimic the variation of color temperature observed for the Planckian Locus on the CIE diagram. This device can have several applications including: a tool for researchers in this area, a general illumination lighting technology, and a light therapy device.

A tuneable approach to uniform light distribution for artificial daylight photodynamic therapy.

PubMed

O'Mahoney, Paul; Haigh, Neil; Wood, Kenny; Brown, C Tom A; Ibbotson, Sally; Eadie, Ewan

2018-06-16

Implementation of daylight photodynamic therapy (dPDT) is somewhat limited by variable weather conditions. Light sources have been employed to provide artificial dPDT indoors, with low irradiances and longer treatment times. Uniform light distribution across the target area is key to ensuring effective treatment, particularly for large areas. A novel light source is developed with tuneable direction of light emission in order to meet this challenge. Wavelength composition of the novel light source is controlled such that the protoporphyrin-IX (PpIX) weighed spectra of both the light source and daylight match. The uniformity of the light source is characterised on a flat surface, a model head and a model leg. For context, a typical conventional PDT light source is also characterised. Additionally, the wavelength uniformity across the treatment site is characterised. The PpIX-weighted spectrum of the novel light source matches with PpIX-weighted daylight spectrum, with irradiance values within the bounds for effective dPDT. By tuning the direction of light emission, improvements are seen in the uniformity across large anatomical surfaces. Wavelength uniformity is discussed. We have developed a light source that addresses the challenges in uniform, multiwavelength light distribution for large area artificial dPDT across curved anatomical surfaces. Copyright © 2018. Published by Elsevier B.V.

Micro optical fiber light source and sensor and method of fabrication thereof

DOEpatents

Kopelman, Raoul; Tan, Weihong; Shi, Zhong-You

1997-01-01

This invention relates generally to the development of and a method of fabricating a fiber optic micro-light source and sensor (50). An optical fiber micro-light source (50) is presented whose aperture is extremely small yet able to act as an intense light source. Light sources of this type have wide ranging applications, including use as micro-sensors (22) in NSOM. Micro-sensor light sources have excellent detection limits as well as photo stability, reversibility, and millisecond response times. Furthermore, a method for manufacturing a micro optical fiber light source is provided. It involves the photo-chemical attachment of an optically active material onto the end surface of an optical fiber cable which has been pulled to form an end with an extremely narrow aperture. More specifically, photopolymerization has been applied as a means to photo-chemically attach an optically active material (60). This process allows significant control of the size of the micro light source (50). Furthermore, photo-chemically attaching an optically active material (60) enables the implementation of the micro-light source in a variety of sensor applications.

Micro optical fiber light source and sensor and method of fabrication thereof

DOEpatents

Kopelman, Raoul; Tan, Weihong; Shi, Zhong-You

1994-01-01

This invention relates generally to the development of and a method of fabricating a micro optical fiber light source. An optical fiber micro-light source is presented whose aperture is extremely small yet able to act as an intense light source. Light sources of this type have wide ranging applications, including use as micro-sensors in NSOM. Micro-sensor light sources have excellent detection limits as well as photo stability, reversibility, and millisecond response times. Furthermore, a method for manufacturing a micro optical fiber light source is provided. It involves the photo-chemical attachment of an optically active material onto the end surface of an optical fiber cable which has been pulled to form an end with an extremely narrow aperture. More specifically, photopolymerization has been applied as a means to photo-chemically attach an optically active material. This process allows significant control of the size of the micro light source. Furthermore, photo-chemically attaching an optically active material enables the implementation of the micro-light source in a variety of sensor applications.

Micro optical fiber light source and sensor and method of fabrication thereof

DOEpatents

Kopelman, R.; Tan, W.; Shi, Z.Y.

1997-05-06

This invention relates generally to the development of and a method of fabricating a fiber optic micro-light source and sensor. An optical fiber micro-light source is presented whose aperture is extremely small yet able to act as an intense light source. Light sources of this type have wide ranging applications, including use as micro-sensors in NSOM. Micro-sensor light sources have excellent detection limits as well as photo stability, reversibility, and millisecond response times. Furthermore, a method for manufacturing a micro optical fiber light source is provided. It involves the photo-chemical attachment of an optically active material onto the end surface of an optical fiber cable which has been pulled to form an end with an extremely narrow aperture. More specifically, photopolymerization has been applied as a means to photo-chemically attach an optically active material. This process allows significant control of the size of the micro light source. Furthermore, photo-chemically attaching an optically active material enables the implementation of the micro-light source in a variety of sensor applications. 10 figs.

Micro optical fiber light source and sensor and method of fabrication thereof

DOEpatents

Kopelman, R.; Tan, W.; Shi, Z.Y.

1994-11-01

This invention relates generally to the development of and a method of fabricating a micro optical fiber light source. An optical fiber micro-light source is presented whose aperture is extremely small yet able to act as an intense light source. Light sources of this type have wide ranging applications, including use as micro-sensors in NSOM. Micro-sensor light sources have excellent detection limits as well as photo stability, reversibility, and millisecond response times. Furthermore, a method for manufacturing a micro optical fiber light source is provided. It involves the photo-chemical attachment of an optically active material onto the end surface of an optical fiber cable which has been pulled to form an end with an extremely narrow aperture. More specifically, photopolymerization has been applied as a means to photo-chemically attach an optically active material. This process allows significant control of the size of the micro light source. Furthermore, photo-chemically attaching an optically active material enables the implementation of the micro-light source in a variety of sensor applications. 4 figs.

LED intense headband light source for fingerprint analysis

DOEpatents

Villa-Aleman, Eliel

2005-03-08

A portable, lightweight and high-intensity light source for detecting and analyzing fingerprints during field investigation. On-site field analysis requires long hours of mobile analysis. In one embodiment, the present invention comprises a plurality of light emitting diodes; a power source; and a personal attachment means; wherein the light emitting diodes are powered by the power source, and wherein the power source and the light emitting diodes are attached to the personal attachment means to produce a personal light source for on-site analysis of latent fingerprints. The present invention is available for other applications as well.

Spectral design flexibility of LED brings better life

NASA Astrophysics Data System (ADS)

Ou, Haiyan; Corell, Dennis; Ou, Yiyu; Poulsen, Peter B.; Dam-Hansen, Carsten; Petersen, Paul-Michael

2012-03-01

Light-emitting diodes (LEDs) are penetrating into the huge market of general lighting because they are energy saving and environmentally friendly. The big advantage of LED light sources, compared to traditional incandescent lamps and fluorescent light tubes, is the flexible spectral design to make white light using different color mixing schemes. The spectral design flexibility of white LED light sources will promote them for novel applications to improve the life quality of human beings. As an initial exploration to make use of the spectral design flexibility, we present an example: 'no blue' white LED light source for sufferers of disease Porphyria. An LED light source prototype, made of high brightness commercial LEDs applying an optical filter, was tested by a patient suffering from Porphyria. Preliminary results have shown that the sufferer could withstand the light source for much longer time than the standard light source. At last future perspectives on spectral design flexibility of LED light sources improving human being's life will be discussed, with focus on the light and health. The good health is ensured by the spectrum optimized so that vital hormones (melatonin and serotonin) are produced during times when they support human daily rhythm.

Light Emitting Diode Flashlights as Effective and Inexpensive Light Sources for Fluorescence Microscopy

PubMed Central

Robertson, J. Brian; Zhang, Yunfei; Johnson, Carl Hirschie

2009-01-01

Summary Light-emitting diodes (LEDs) are becoming more commonly used as light sources for fluorescence microscopy. We describe the adaptation of a commercially available LED flashlight for use as a source for fluorescence excitation. This light source is long-lived, inexpensive, and is effective for excitation in the range of 440–600 nm. PMID:19772530

Multilayered microelectronic device package with an integral window

DOEpatents

Peterson, Kenneth A.; Watson, Robert D.

2003-01-01

An apparatus for packaging of microelectronic devices is disclosed, wherein the package includes an integral window. The microelectronic device can be a semiconductor chip, a CCD chip, a CMOS chip, a VCSEL chip, a laser diode, a MEMS device, or a IMEMS device. The package can comprise, for example, a cofired ceramic frame or body. The package has an internal stepped structure made of a plurality of plates, with apertures, which are patterned with metallized conductive circuit traces. The microelectronic device can be flip-chip bonded on the plate to these traces, and oriented so that the light-sensitive side is optically accessible through the window. A cover lid can be attached to the opposite side of the package. The result is a compact, low-profile package, having an integral window that can be hermetically-sealed. The package body can be formed by low-temperature cofired ceramic (LTCC) or high-temperature cofired ceramic (HTCC) multilayer processes with the window being simultaneously joined (e.g. cofired) to the package body during LTCC or HTCC processing. Multiple chips can be located within a single package, according to some embodiments. The cover lid can include a window. The apparatus is particularly suited for packaging of MEMS devices, since the number of handling steps is greatly reduced, thereby reducing the potential for contamination. The integral window can further include a lens for optically transforming light passing through the window. The package can include an array of binary optic lenslets made integral with the window. The package can include an electrically-switched optical modulator, such as a lithium niobate window attached to the package, for providing a very fast electrically-operated shutter.

Air-suspended TiO2-based HCG reflectors for visible spectral range

NASA Astrophysics Data System (ADS)

Hashemi, Ehsan; Bengtsson, Jörgen; Gustavsson, Johan; Carlsson, Stefan; Rossbach, Georg; Haglund, Åsa

2015-02-01

For GaN-based microcavity light emitters, such as vertical-cavity surface-emitting lasers (VCSELs) and resonant cavity light emitting diodes (RCLEDs) in the blue-green wavelength regime, achieving a high reflectivity wide bandwidth feedback mirror is truly challenging. The material properties of the III-nitride alloys are hardly compatible with the conventional distributed Bragg reflectors (DBRs) and the newly proposed high-contrast gratings (HCGs). Alternatively, at least for the top outcoupling mirror, dielectric materials offer more suitable material combinations not only for the DBRs but also for the HCGs. HCGs may offer advantages such as transverse mode and polarization control, a broader reflectivity spectrum than epitaxially grown DBRs, and the possibility to set the resonance wavelength after epitaxial growth by the grating parameters. In this work we have realized an air-suspended TiO2 grating with the help of a SiO2 sacrificial layer. The deposition processes for the dielectric layers were fine-tuned to minimize the residual stress. To achieve an accurate control of the grating duty cycle, a newly developed lift-off process, using hydrogen silesquioxan (HSQ) and sacrificial polymethyl-methacrylate (PMMA) resists, was applied to deposit the hard mask, providing sub-10 nm resolution. The finally obtained TiO2/air HCGs were characterized in a micro-reflectance measurement setup. A peak power reflectivity in excess of 95% was achieved for TM polarization at the center wavelength of 435 nm, with a reflectivity stopband width of about 80 nm (FWHM). The measured HCG reflectance spectra were compared to corresponding simulations obtained from rigorous coupled-wave analysis and very good agreement was found.

Multi-longitudinal-mode micro-laser model

NASA Astrophysics Data System (ADS)

Staliunas, Kestutis

2017-10-01

We derive a convenient model for broad aperture micro-lasers, such as microchip lasers, broad area semiconductor lasers, or VCSELs, taking into account several longitudinal mode families. We provide linear stability analysis, and show characteristic spatio-temporal dynamics in such multi-longitudinal mode laser models. Moreover, we derive the coupled mode model in the presence of intracavity refraction index modulation (intracavity photonic crystal). Contribution to the Topical Issue "Theory and Applications of the Lugiato-Lefever Equation", edited by Yanne K. Chembo, Damia Gomila, Mustapha Tlidi, Curtis R. Menyuk.

Smart Pixels for Optical Processing and Communications: Design, Models, Fabrication and Test

DTIC Science & Technology

1998-06-01

11.3 Mobility-Lifetime Product 115 11.4 P-IforVCSEL 116 Chapter 12: Developing a Reliable Etch 12.1 Etch Rates and Selectivity for Citric Acid 126...eGa0.4As etch-stop layer beneath the GaAs buffer. The gate recess was performed with a timed citric acid / hydrogen peroxide wet etch. The conducting...alkalinity. The wet etchant tested in this effort was a citric acid / hydrogen peroxide mixture,8൓ due to its availability, ease of preparation

Fibre Optic Connections And Method For Using Same

DOEpatents

Chan, Benson; Cohen, Mitchell S.; Fortier, Paul F.; Freitag, Ladd W.; Hall, Richard R.; Johnson, Glen W.; Lin, How Tzu; Sherman, John H.

2004-03-30

A package is described that couples a twelve channel wide fiber optic cable to a twelve channel Vertical Cavity Surface Emitting Laser (VCSEL) transmitter and a multiple channel Perpendicularly Aligned Integrated Die (PAID) receiver. The package allows for reduction in the height of the assembly package by vertically orienting certain dies parallel to the fiber optic cable and horizontally orienting certain other dies. The assembly allows the vertically oriented optoelectronic dies to be perpendicularly attached to the horizontally oriented laminate via a flexible circuit.

Light intensity and quality from sole-source light-emitting diodes impact growth, morphology, and nutrient content of Brassica microgreens

USDA-ARS?s Scientific Manuscript database

Multi-layer vertical production systems using sole-source (SS) lighting can be used for microgreen production; however, traditional SS lighting can consume large amounts of electrical energy. Light-emitting diodes (LEDs) offer many advantages over conventional light sources including: high photoelec...

LED lamp

DOEpatents

Galvez, Miguel; Grossman, Kenneth; Betts, David

2013-11-12

There is herein described a lamp for providing white light comprising a plurality of light sources positioned on a substrate. Each of said light sources comprises a blue light emitting diode (LED) and a dome that substantially covers said LED. A first portion of said blue light from said LEDs is transmitted through said domes and a second portion of said blue light is converted into a red light by a first phosphor contained in said domes. A cover is disposed over all of said light sources that transmits at least a portion of said red and blue light emitted by said light sources. The cover contains a second phosphor that emits a yellow light in response to said blue light. The red, blue and yellow light combining to form the white light and the white light having a color rendering index (CRI) of at least about 80.

Photonic crystal light source

DOEpatents

Fleming, James G [Albuquerque, NM; Lin, Shawn-Yu [Albuquerque, NM; Bur, James A [Corrales, NM

2004-07-27

A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

A compact, coherent light source system architecture

NASA Astrophysics Data System (ADS)

Biedron, S. G.; Dattoli, G.; DiPalma, E.; Einstein, J.; Milton, S. V.; Petrillo, V.; Rau, J. V.; Sabia, E.; Spassovsky, I. P.; van der Slot, P. J. M.

2016-09-01

Our team has been examining several architectures for short-wavelength, coherent light sources. We are presently exploring the use and role of advanced, high-peak power lasers for both accelerating the electrons and generating a compact light source with the same laser. Our overall goal is to devise light sources that are more accessible by industry and in smaller laboratory settings. Although we cannot and do not want to compete directly with sources such as third-generation light sources or that of national-laboratory-based free-electron lasers, we have several interesting schemes that could bring useful and more coherent, short-wavelength light source to more researchers. Here, we present and discuss several results of recent simulations and our future steps for such dissemination.

Intense X-ray and EUV light source

DOEpatents

Coleman, Joshua; Ekdahl, Carl; Oertel, John

2017-06-20

An intense X-ray or EUV light source may be driven by the Smith-Purcell effect. The intense light source may utilize intense electron beams and Bragg crystals. This may allow the intense light source to range from the extreme UV range up to the hard X-ray range.

Carambola optics for recycling of light.

PubMed

Leutz, Ralf; Fu, Ling; Ries, Harald

2006-04-20

Recycling of light allows the luminance (radiance) emitted by a light source to be increased at the cost of reducing the total luminous flux (radiant power). Recycling of light means returning part of the emitted light to the source, where part of it will escape absorption. An optical design that is suitable for multiple and controlled recycling is described. Carambola optics is named for its resemblance to star fruit. Several pairs of mirrors or prisms redirect light repeatedly onto the source, thus achieving multiple transits of the light through the source. This recycled light exits the carambola in the same phase space as light directly emitted and not recycled.

Lighting system with thermal management system

DOEpatents

Arik, Mehmet; Weaver, Stanton Earl; Stecher, Thomas Elliot; Seeley, Charles Erklin; Kuenzler, Glenn Howard; Wolfe, Jr., Charles Franklin; Utturkar, Yogen Vishwas; Sharma, Rajdeep; Prabhakaran, Satish; Icoz, Tunc

2015-02-24

Lighting systems having unique configurations are provided. For instance, the lighting system may include a light source, a thermal management system and driver electronics, each contained within a housing structure. The light source is configured to provide illumination visible through an opening in the housing structure. The thermal management system is configured to provide an air flow, such as a unidirectional air flow, through the housing structure in order to cool the light source. The driver electronics are configured to provide power to each of the light source and the thermal management system.

Lighting system with thermal management system

DOEpatents

Arik, Mehmet; Weaver, Stanton Earl; Stecher, Thomas Elliot; Seeley, Charles Erklin; Kuenzler, Glenn Howard; Wolfe, Jr., Charles Franklin; Utturkar, Yogen Vishwas; Sharma, Rajdeep; Prabhakaran, Satish; Icoz, Tunc

2015-08-25

Lighting systems having unique configurations are provided. For instance, the lighting system may include a light source, a thermal management system and driver electronics, each contained within a housing structure. The light source is configured to provide illumination visible through an opening in the housing structure. The thermal management system is configured to provide an air flow, such as a unidirectional air flow, through the housing structure in order to cool the light source. The driver electronics are configured to provide power to each of the light source and the thermal management system.

Lighting system with thermal management system

DOEpatents

Arik, Mehmet; Weaver, Stanton; Stecher, Thomas; Seeley, Charles; Kuenzler, Glenn; Wolfe, Jr., Charles; Utturkar, Yogen; Sharma, Rajdeep; Prabhakaran, Satish; Icoz, Tunc

2013-05-07

Lighting systems having unique configurations are provided. For instance, the lighting system may include a light source, a thermal management system and driver electronics, each contained within a housing structure. The light source is configured to provide illumination visible through an opening in the housing structure. The thermal management system is configured to provide an air flow, such as a unidirectional air flow, through the housing structure in order to cool the light source. The driver electronics are configured to provide power to each of the light source and the thermal management system.

Lighting system with thermal management system

DOEpatents

Arik, Mehmet; Weaver, Stanton Earl; Stecher, Thomas Elliot; Seeley, Charles Erklin; Kuenzler, Glenn Howard; Wolfe, Jr, Charles Franklin; Utturkar, Yogen Vishwas; Sharma, Rajdeep; Prabhakaran, Satish; Icoz, Tunc

2016-10-11

Lighting systems having unique configurations are provided. For instance, the lighting system may include a light source, a thermal management system and driver electronics, each contained within a housing structure. The light source is configured to provide illumination visible through an opening in the housing structure. The thermal management system is configured to provide an air flow, such as a unidirectional air flow, through the housing structure in order to cool the light source. The driver electronics are configured to provide power to each of the light source and the thermal management system.

Assessment of the actual light dose in photodynamic therapy.

PubMed

Schaberle, Fabio A

2018-06-09

Photodynamic therapy (PDT) initiates with the absorption of light, which depends on the spectral overlap between the light source emission and the photosensitizer absorption, resulting in the number of photons absorbed, the key parameter starting PDT processes. Most papers report light doses regardless if the light is only partially absorbed or shifted relatively to the absorption peak, misleading the actual light dose value and not allowing quantitative comparisons between photosensitizers and light sources. In this manuscript a method is presented to calculate the actual light dose delivered by any light source for a given photosensitizer. This method allows comparing light doses delivered for any combination of light source (broad or narrow band or daylight) and photosensitizer. Copyright © 2018. Published by Elsevier B.V.

Quantitative phase imaging of biological cells using spatially low and temporally high coherent light source.

PubMed

Ahmad, Azeem; Dubey, Vishesh; Singh, Gyanendra; Singh, Veena; Mehta, Dalip Singh

2016-04-01

In this Letter, we demonstrate quantitative phase imaging of biological samples, such as human red blood cells (RBCs) and onion cells using narrow temporal frequency and wide angular frequency spectrum light source. This type of light source was synthesized by the combined effect of spatial, angular, and temporal diversity of speckle reduction technique. The importance of using low spatial and high temporal coherence light source over the broad band and narrow band light source is that it does not require any dispersion compensation mechanism for biological samples. Further, it avoids the formation of speckle or spurious fringes which arises while using narrow band light source.

Ultrahigh speed endoscopic optical coherence tomography for gastroenterology.

PubMed

Tsai, Tsung-Han; Lee, Hsiang-Chieh; Ahsen, Osman O; Liang, Kaicheng; Giacomelli, Michael G; Potsaid, Benjamin M; Tao, Yuankai K; Jayaraman, Vijaysekhar; Figueiredo, Marisa; Huang, Qin; Cable, Alex E; Fujimoto, James; Mashimo, Hiroshi

2014-12-01

We describe an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor imaging catheter. The system had a 600 kHz axial scan rate and 8 µm axial resolution in tissue. Imaging was performed with a 3.2 mm diameter imaging catheter at 400 frames per second with a 12 µm spot size. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing upper and lower endoscopy. The use of distally actuated imaging catheters enabled OCT imaging with more flexibility, such as volumetric imaging in the small intestine and the assessment of hiatal hernia using retroflex imaging. The high rotational scanning stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face OCT and cross-sectional imaging, as well as OCT angiography (OCTA) for 3D visualization of subsurface microvasculature. The ability to perform both structural and functional 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies and enhance the sensitivity and specificity of OCT for detecting pathology.

Ultrahigh speed endoscopic optical coherence tomography for gastroenterology

PubMed Central

Tsai, Tsung-Han; Lee, Hsiang-Chieh; Ahsen, Osman O.; Liang, Kaicheng; Giacomelli, Michael G.; Potsaid, Benjamin M.; Tao, Yuankai K.; Jayaraman, Vijaysekhar; Figueiredo, Marisa; Huang, Qin; Cable, Alex E.; Fujimoto, James; Mashimo, Hiroshi

2014-01-01

We describe an ultrahigh speed endoscopic swept source optical coherence tomography (OCT) system for clinical gastroenterology using a vertical-cavity surface-emitting laser (VCSEL) and micromotor imaging catheter. The system had a 600 kHz axial scan rate and 8 µm axial resolution in tissue. Imaging was performed with a 3.2 mm diameter imaging catheter at 400 frames per second with a 12 µm spot size. Three-dimensional OCT (3D-OCT) imaging was performed in patients with a cross section of pathologies undergoing upper and lower endoscopy. The use of distally actuated imaging catheters enabled OCT imaging with more flexibility, such as volumetric imaging in the small intestine and the assessment of hiatal hernia using retroflex imaging. The high rotational scanning stability of the micromotor enabled 3D volumetric imaging with micron scale volumetric accuracy for both en face OCT and cross-sectional imaging, as well as OCT angiography (OCTA) for 3D visualization of subsurface microvasculature. The ability to perform both structural and functional 3D OCT imaging in the GI tract with microscopic accuracy should enable a wide range of studies and enhance the sensitivity and specificity of OCT for detecting pathology. PMID:25574446

A novel amblyopia treatment system based on LED light source

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqing; Chen, Qingshan; Wang, Xiaoling

2011-05-01

A novel LED (light emitting diode) light source of five different colors (white, red, green, blue and yellow) is adopted instead of conventional incandescent lamps for an amblyopia treatment system and seven training methods for rectifying amblyopia are incorporated so as for achieving an integrated therapy. The LED light source is designed to provide uniform illumination, adjustable light intensity and alterable colors. Experimental tests indicate that the LED light source operates steadily and fulfills the technical demand of amblyopia treatment.

A novel amblyopia treatment system based on LED light source

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqing; Chen, Qingshan; Wang, Xiaoling

2010-12-01

A novel LED (light emitting diode) light source of five different colors (white, red, green, blue and yellow) is adopted instead of conventional incandescent lamps for an amblyopia treatment system and seven training methods for rectifying amblyopia are incorporated so as for achieving an integrated therapy. The LED light source is designed to provide uniform illumination, adjustable light intensity and alterable colors. Experimental tests indicate that the LED light source operates steadily and fulfills the technical demand of amblyopia treatment.

The Inverse-Square Law with Data Loggers

ERIC Educational Resources Information Center

Bates, Alan

2013-01-01

The inverse-square law for the intensity of light received at a distance from a light source has been verified using various experimental techniques. Typical measurements involve a manual variation of the distance between a light source and a light sensor, usually by sliding the sensor or source along a bench, measuring the source-sensor distance…

Colors of attraction: Modeling insect flight to light behavior.

PubMed

Donners, Maurice; van Grunsven, Roy H A; Groenendijk, Dick; van Langevelde, Frank; Bikker, Jan Willem; Longcore, Travis; Veenendaal, Elmar

2018-06-26

Light sources attract nocturnal flying insects, but some lamps attract more insects than others. The relation between the properties of a light source and the number of attracted insects is, however, poorly understood. We developed a model to quantify the attractiveness of light sources based on the spectral output. This model is fitted using data from field experiments that compare a large number of different light sources. We validated this model using two additional datasets, one for all insects and one excluding the numerous Diptera. Our model facilitates the development and application of light sources that attract fewer insects without the need for extensive field tests and it can be used to correct for spectral composition when formulating hypotheses on the ecological impact of artificial light. In addition, we present a tool allowing the conversion of the spectral output of light sources to their relative insect attraction based on this model. © 2018 Wiley Periodicals, Inc.

Geometrical analysis of an optical fiber bundle displacement sensor

NASA Astrophysics Data System (ADS)

Shimamoto, Atsushi; Tanaka, Kohichi

1996-12-01

The performance of a multifiber optical lever was geometrically analyzed by extending the Cook and Hamm model [Appl. Opt. 34, 5854-5860 (1995)] for a basic seven-fiber optical lever. The generalized relationships between sensitivity and the displacement detection limit to the fiber core radius, illumination irradiance, and coupling angle were obtained by analyses of three various types of light source, i.e., a parallel beam light source, an infinite plane light source, and a point light source. The analysis of the point light source was confirmed by a measurement that used the light source of a light-emitting diode. The sensitivity of the fiber-optic lever is inversely proportional to the fiber core radius, whereas the receiving light power is proportional to the number of illuminating and receiving fibers. Thus, the bundling of the finer fiber with the larger number of illuminating and receiving fibers is more effective for improving sensitivity and the displacement detection limit.

Behavioural responses of krill and cod to artificial light in laboratory experiments

PubMed Central

Løkkeborg, S.; Humborstad, O-B.

2018-01-01

Most fishes and crustaceans respond to light, and artificial light sources may therefore be an efficient stimulus to manipulate behaviours in aquatic animals. It has been hypothesised that the catch efficiency of pots could be increased if prey, for example krill, can be attracted into the pots providing a visual stimulus and a source of live bait. To find which light characteristics are most attractive to krill, we tested the effects of light intensity and wavelength composition on Northern krill’s (Meganyctiphanes norvegica) behavioural response to an artificial light source. The most attractive individual wavelength was 530 nm (green light), while broadband (425–750 nm) white light was an equally attractive light source. The intensity of the emitted light did not appear to have a direct effect on attraction to the light source, however it did significantly increase swimming activity among the observed krill. The most promising light stimuli for krill were tested to determine whether they would have a repulsive or attractive effect on cod (Gadus morhua); These light stimuli appeared to have a slightly repulsive, but non-significant, effect on cod. However, we suggest that a swarm of krill attracted to an artificial light source may produce a more effective visual stimulus to foraging cod. PMID:29370231

Behavioural responses of krill and cod to artificial light in laboratory experiments.

PubMed

Utne-Palm, A C; Breen, M; Løkkeborg, S; Humborstad, O-B

2018-01-01

Most fishes and crustaceans respond to light, and artificial light sources may therefore be an efficient stimulus to manipulate behaviours in aquatic animals. It has been hypothesised that the catch efficiency of pots could be increased if prey, for example krill, can be attracted into the pots providing a visual stimulus and a source of live bait. To find which light characteristics are most attractive to krill, we tested the effects of light intensity and wavelength composition on Northern krill's (Meganyctiphanes norvegica) behavioural response to an artificial light source. The most attractive individual wavelength was 530 nm (green light), while broadband (425-750 nm) white light was an equally attractive light source. The intensity of the emitted light did not appear to have a direct effect on attraction to the light source, however it did significantly increase swimming activity among the observed krill. The most promising light stimuli for krill were tested to determine whether they would have a repulsive or attractive effect on cod (Gadus morhua); These light stimuli appeared to have a slightly repulsive, but non-significant, effect on cod. However, we suggest that a swarm of krill attracted to an artificial light source may produce a more effective visual stimulus to foraging cod.

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Silicon micromachined broad band light source

NASA Technical Reports Server (NTRS)

George, Thomas (Inventor); Jones, Eric (Inventor); Tuma, Margaret L. (Inventor); Eastwood, Michael (Inventor); Hansler, Richard (Inventor)

2004-01-01

A micro electromechanical system (MEMS) broad band incandescent light source includes three layers: a top transmission window layer; a middle filament mount layer; and a bottom reflector layer. A tungsten filament with a spiral geometry is positioned over a hole in the middle layer. A portion of the broad band light from the heated filament is reflective off the bottom layer. Light from the filament and the reflected light of the filament are transmitted through the transmission window. The light source may operate at temperatures of 2500 K or above. The light source may be incorporated into an on board calibrator (OBC) for a spectrometer.

A two-metric proposal to specify the color-rendering properties of light sources for retail lighting

NASA Astrophysics Data System (ADS)

Freyssinier, Jean Paul; Rea, Mark

2010-08-01

Lighting plays an important role in supporting retail operations, from attracting customers, to enabling the evaluation of merchandise, to facilitating the completion of the sale. Lighting also contributes to the identity, comfort, and visual quality of a retail store. With the increasing availability and quality of white LEDs, retail lighting specifiers are now considering LED lighting in stores. The color rendering of light sources is a key factor in supporting retail lighting goals and thus influences a light source's acceptance by users and specifiers. However, there is limited information on what consumers' color preferences are, and metrics used to describe the color properties of light sources often are equivocal and fail to predict preference. The color rendering of light sources is described in the industry solely by the color rendering index (CRI), which is only indirectly related to human perception. CRI is intended to characterize the appearance of objects illuminated by the source and is increasingly being challenged because new sources are being developed with increasingly exotic spectral power distributions. This paper discusses how CRI might be augmented to better use it in support of the design objectives for retail merchandising. The proposed guidelines include the use of gamut area index as a complementary metric to CRI for assuring good color rendering.

Effect of laser speckle on light from laser diode-pumped phosphor-converted light sources.

PubMed

Aquino, Felipe; Jadwisienczak, Wojciech M; Rahman, Faiz

2017-01-10

Laser diode (LD) pumped white light sources are being developed as an alternative to light-emitting diode-pumped sources for high efficiency and/or high brightness applications. While several performance metrics of laser-pumped phosphor-converted light sources have been investigated, the effect of laser speckle has not been sufficiently explored. This paper describes our experimental studies on how laser speckle affects the behavior of light from laser-excited phosphor lamps. A single LD pumping a phosphor plate was the geometry explored in this work. Overall, our findings are that the down-converted light did not exhibit any speckle, whereas speckle was present in the residual pump light but much reduced from that in direct laser light. Furthermore, a thicker coating of small-grained phosphors served to effectively reduce speckle through static pump light diffusion in the phosphor coating. Our investigations showed that speckle is not of concern in illumination from LD-pumped phosphor-converted light sources.

Evaluating white LEDs for outdoor landscape lighting application

NASA Astrophysics Data System (ADS)

Shakir, Insiya; Narendran, Nadarajah

2002-11-01

A laboratory experiment was conducted to understand the acceptability of different white light emitting diodes (LEDs) for outdoor landscape lighting. The study used a scaled model setup. The scene was designed to replicate the exterior of a typical upscale suburban restaurant including the exterior facade of the building, an approach with steps, and a garden. The lighting was designed to replicate light levels commonly found in nighttime outdoor conditions. The model had a central dividing partition with symmetrical scenes on both sides for side-by-side evaluations of the two scenes with different light sources. While maintaining equal luminance levels and distribution between the two scenes, four types of light sources were evaluated. These include, halogen, phosphor white LED, and two white light systems using RGB LEDs. These light sources were tested by comparing two sources at a time placed side-by-side and by individual assessment of each lighting condition. The results showed that the RGB LEDs performed equal or better than the most widely used halogen light source in this given setting. A majority of the subjects found slightly dimmer ambient lighting to be more typical for restaurants and therefore found RGB LED and halogen light sources to be more inviting. The phosphor white LEDs made the space look brighter, however a majority of the subjects disliked them.

Study on Formulation of Optimum Lighting-system for Purchasing Power at Stores

NASA Astrophysics Data System (ADS)

Fujita, Hiroki; Nakashima, Yoshio; Takamatsu, Mamoru; Oota, Masaaki; Sawa, Kazuhiro

In store lighting, difference in the look-and-feel of foods gives effects on the purchasing power of customers. This study conducted the digitalization and quantification on the effects of the variation of light-source color and illuminance used for lighting foods on image recognition on foods. As a result, it was clarified that when meat was illuminated with the light source of “pink” or “faint pink,” image evaluation on foods became higher. In addition, when illuminance increase was applied to these two light-source colors, image evaluation on “faint pink” became further higher. The reason is supposed to be that the redness of meat increased, which may have enhanced fresher impression. From this study, it has been clarified that the light-source color and illuminance optimum for each food are variant. The results show that lighting foods with the optimum light-source color and illuminance can make foods look better.

Light source comprising a common substrate, a first led device and a second led device

DOEpatents

Choong, Vi-En

2010-02-23

At least one stacked organic or polymeric light emitting diode (PLEDs) devices to comprise a light source is disclosed. At least one of the PLEDs includes a patterned cathode which has regions which transmit light. The patterned cathodes enable light emission from the PLEDs to combine together. The light source may be top or bottom emitting or both.

DUV light source availability improvement via further enhancement of gas management technologies

NASA Astrophysics Data System (ADS)

Riggs, Daniel J.; O'Brien, Kevin; Brown, Daniel J. W.

2011-04-01

The continuous evolution of the semiconductor market necessitates ever-increasing improvements in DUV light source uptime as defined in the SEMI E10 standard. Cymer is developing technologies to exceed current and projected light source availability requirements via significant reduction in light source downtime. As an example, consider discharge chamber gas management functions which comprise a sizable portion of DUV light source downtime. Cymer's recent introduction of Gas Lifetime Extension (GLXTM) as a productivity improvement technology for its DUV lithography light sources has demonstrated noteworthy reduction in downtime. This has been achieved by reducing the frequency of full gas replenishment events from once per 100 million pulses to as low as once per 2 billion pulses. Cymer has continued to develop relevant technologies that target further reduction in downtime associated with light source gas management functions. Cymer's current subject is the development of technologies to reduce downtime associated with gas state optimization (e.g. total chamber gas pressure) and gas life duration. Current gas state optimization involves execution of a manual procedure at regular intervals throughout the lifetime of light source core components. Cymer aims to introduce a product enhancement - iGLXTM - that eliminates the need for the manual procedure and, further, achieves 4 billion pulse gas lives. Projections of uptime on DUV light sources indicate that downtime associated with gas management will be reduced by 70% when compared with GLX2. In addition to reducing downtime, iGLX reduces DUV light source cost of operation by constraining gas usage. Usage of fluorine rich Halogen gas mix has been reduced by 20% over GLX2.

Design and evaluation of excitation light source device for fluorescence endoscope

NASA Astrophysics Data System (ADS)

Lim, Hyun Soo

2009-06-01

This study aims at designing and evaluating light source devices that can stably generate light with various wavelengths in order to make possible PDD using a photosensitizer and diagnosis using auto-fluorescence. The light source was a Xenon lamp and filter wheel, composed of an optical output control through Iris and filters with several wavelength bands. It also makes the inducement of auto-fluorescence possible because it is designed to generate a wavelength band of 380-420nm, 430-480nm, and 480-560nm. The transmission part of the light source was developed to enhance the efficiency of light transmission. To evaluate this light source, the characteristics of light output and wavelength band were verified. To validate the capability of this device as PDD, the detection of auto-fluorescence using mouse models was performed.

Modeling of an Adjustable Beam Solid State Light Project

NASA Technical Reports Server (NTRS)

Clark, Toni

2015-01-01

This proposal is for the development of a computational model of a prototype variable beam light source using optical modeling software, Zemax Optics Studio. The variable beam light source would be designed to generate flood, spot, and directional beam patterns, while maintaining the same average power usage. The optical model would demonstrate the possibility of such a light source and its ability to address several issues: commonality of design, human task variability, and light source design process improvements. An adaptive lighting solution that utilizes the same electronics footprint and power constraints while addressing variability of lighting needed for the range of exploration tasks can save costs and allow for the development of common avionics for lighting controls.

An experiment on the color rendering of different light sources

NASA Astrophysics Data System (ADS)

Fumagalli, Simonetta; Bonanomi, Cristian; Rizzi, Alessandro

2013-02-01

The color rendering index (CRI) of a light source attempts to measure how much the color appearance of objects is preserved when they are illuminated by the given light source. This problem is of great importance for various industrial and scientific fields, such as lighting architecture, design, ergonomics, etc. Usually a light source is specified through the Correlated Color Temperature or CCT. However two (or more) light sources with the same CCT but different spectral power distribution can exist. Therefore color samples viewed under two light sources with equal CCTs can appear different. Hence, the need for a method to assess the quality of a given illuminant in relation to color. Recently CRI has had a renewed interest because of the new LED-based lighting systems. They usually have a color rendering index rather low, but good preservation of color appearance and a pleasant visual appearance (visual appeal). Various attempts to develop a new color rendering index have been done so far, but still research is working for a better one. This article describes an experiment performed by human observers concerning the appearance preservation of color under some light sources, comparing it with a range of available color rendering indices.

EGR distribution and fluctuation probe based on CO.sub.2 measurements

DOEpatents

Parks, II, James E; Partridge, Jr., William P; Yoo, Ji Hyung

2015-04-07

A diagnostic system having a single-port EGR probe and a method for using the same. The system includes a light source, an EGR probe, a detector and a processor. The light source may provide a combined light beam composed of light from a mid-infrared signal source and a mid-infrared reference source. The signal source may be centered at 4.2 .mu.m and the reference source may be centered at 3.8 .mu.m. The EGR probe may be a single-port probe with internal optics and a sampling chamber with two flow cells arranged along the light path in series. The optics may include a lens for focusing the light beam and a mirror for reflecting the light beam received from a pitch optical cable to a catch optical cable. The signal and reference sources are modulated at different frequencies, thereby allowing them to be separated and the signal normalized by the processor.

Synchrotron Light Sources in Developing Countries

NASA Astrophysics Data System (ADS)

Winick, Herman; Pianetta, Piero

The more than 50 light sources in operation include facilities in Brazil, Korea, and Taiwan which started in the 1980's when they were developing countries. They came on line in the 1990's and have since trained hundreds of graduate students. They have attracted mid-career diaspora scientists to return. Growing user communities have demanded more advanced facilities, leading to higher performance new light sources that are now coming into operation. Light sources in the developing world now include the following: ∖textbf{SESAME}in the Middle East which is scheduled to start research in 2017 (∖underline {www.sesame.org}); ∖textbf{The African Light Source}, in the planning stage (∖underline {www.safricanlightsource.org}); and ∖textbf{The Mexican Light Source}, in the planning stage (∖underline {http://www.aps.org/units/fip/newsletters/201509/mexico.cfm}). See: http://wpj.sagepub.com/content/32/4/92.full.pdf +html; http://www.lightsources.org/press-release/2015/11/20/grenoble-resolutions-mark-historical-step-towards-african-light-source..

Reduction of background clutter in structured lighting systems

DOEpatents

Carlson, Jeffrey J.; Giles, Michael K.; Padilla, Denise D.; Davidson, Jr., Patrick A.; Novick, David K.; Wilson, Christopher W.

2010-06-22

Methods for segmenting the reflected light of an illumination source having a characteristic wavelength from background illumination (i.e. clutter) in structured lighting systems can comprise pulsing the light source used to illuminate a scene, pulsing the light source synchronously with the opening of a shutter in an imaging device, estimating the contribution of background clutter by interpolation of images of the scene collected at multiple spectral bands not including the characteristic wavelength and subtracting the estimated background contribution from an image of the scene comprising the wavelength of the light source and, placing a polarizing filter between the imaging device and the scene, where the illumination source can be polarized in the same orientation as the polarizing filter. Apparatus for segmenting the light of an illumination source from background illumination can comprise an illuminator, an image receiver for receiving images of multiple spectral bands, a processor for calculations and interpolations, and a polarizing filter.

Light Source Matters--Students' Explanations about the Behavior of Light When Different Light Sources Are Used in Task Assignments of Optics

ERIC Educational Resources Information Center

Kesonen, Mikko Henri Petteri; Asikainen, Mervi Anita; Hirvonen, Pekka Emil

2017-01-01

In the present article, the context-dependency of student reasoning is studied in a context of optics. We investigated introductory students' explanations about the behavior of light when different light sources, namely a small light bulb and a laser, were used in otherwise identical task assignments. The data was gathered with the aid of pretest…

Microelectromechanical Systems (MEMS) Broadband Light Source Developed

NASA Technical Reports Server (NTRS)

Tuma, Margaret L.

2003-01-01

A miniature, low-power broadband light source has been developed for aerospace applications, including calibrating spectrometers and powering miniature optical sensors. The initial motivation for this research was based on flight tests of a Fabry-Perot fiberoptic temperature sensor system used to detect aircraft engine exhaust gas temperature. Although the feasibility of the sensor system was proven, the commercial light source optically powering the device was identified as a critical component requiring improvement. Problems with the light source included a long stabilization time (approximately 1 hr), a large amount of heat generation, and a large input electrical power (6.5 W). Thus, we developed a new light source to enable the use of broadband optical sensors in aerospace applications. Semiconductor chip-based light sources, such as lasers and light-emitting diodes, have a relatively narrow range of emission wavelengths in comparison to incandescent sources. Incandescent light sources emit broadband radiation from visible to infrared wavelengths; the intensity at each wavelength is determined by the filament temperature and the materials chosen for the filament and the lamp window. However, present commercial incandescent light sources are large in size and inefficient, requiring several watts of electrical power to obtain the desired optical power, and they emit a large percentage of the input power as heat that must be dissipated. The miniature light source, developed jointly by the NASA Glenn Research Center, the Jet Propulsion Laboratory, and the Lighting Innovations Institute, requires one-fifth the electrical input power of some commercial light sources, while providing similar output light power that is easily coupled to an optical fiber. Furthermore, it is small, rugged, and lightweight. Microfabrication technology was used to reduce the size, weight, power consumption, and potential cost-parameters critical to future aerospace applications. This chip-based light source has the potential for monolithic fabrication with on-chip drive electronics. Other uses for these light sources are in systems for vehicle navigation, remote sensing applications such as monitoring bridges for stress, calibration sources for spectrometers, light sources for space sensors, display lighting, addressable arrays, and industrial plant monitoring. Two methods for filament fabrication are being developed: wet-chemical etching and laser ablation. Both yield a 25-mm-thick tungsten spiral filament. The proof-of-concept filament shown was fabricated with the wet etch method. Then it was tested by heating it in a vacuum chamber using about 1.25 W of electrical power; it generated bright, blackbody radiation at approximately 2650 K. The filament was packaged in Glenn's clean-room facilities. This design uses three chips vacuum-sealed with glass tape. The bottom chip consists of a reflective film deposited on silicon, the middle chip contains a tungsten filament bonded to silicon, and the top layer is a transparent window. Lifetime testing on the package will begin shortly. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 mm.

A compact high brightness laser synchrotron light source for medical applications

NASA Astrophysics Data System (ADS)

Nakajima, Kazuhisa

1999-07-01

The present high-brightness hard X-ray sources have been developed as third generation synchrotron light sources based on large high energy electron storage rings and magnetic undulators. Recently availability of compact terawatt lasers arouses a great interest in the use of lasers as undulators. The laser undulator concept makes it possible to construct an attractive compact synchrotron radiation source which has been proposed as a laser synchrotron light source. This paper proposes a compact laser synchrotron light source for mediacal applications, such as an intravenous coronary angiography and microbeam therapy.

The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

ERIC Educational Resources Information Center

Jackson, David L.; And Others

1985-01-01

The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

Light Source

NASA Technical Reports Server (NTRS)

1993-01-01

Research on food growth for long duration spacecraft has resulted in a light source for growing plants indoors known as Qbeam, a solid state light source consisting of a control unit and lamp. The light source, manufactured by Quantum Devices, Inc., is not very hot, although it generates high intensity radiation. When Ron Ignatius, an industrial partner of WCSAR, realized that terrestrial plant research lighting was not energy efficient enough for space use, he and WCSAR began to experiment with light emitting diodes. A line of LED products was developed, and QDI was formed to market the technology. An LED-based cancer treatment device is currently under development.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riza, Nabeel Agha; Perez, Frank

A remote temperature sensing system includes a light source selectively producing light at two different wavelengths and a sensor device having an optical path length that varies as a function of temperature. The sensor receives light emitted by the light source and redirects the light along the optical path length. The system also includes a detector receiving redirected light from the sensor device and generating respective signals indicative of respective intensities of received redirected light corresponding to respective wavelengths of light emitted by the light source. The system also includes a processor processing the signals generated by the detector tomore » calculate a temperature of the device.« less

Illumination control apparatus for compensating solar light

NASA Technical Reports Server (NTRS)

Owens, L. J. (Inventor)

1978-01-01

An illumination control apparatus is presented for supplementing light from solar radiation with light from an artificial light source to compensate for periods of insufficient levels of solar light. The apparatus maintains a desired illumination level within an interior space comprising an artificial light source connected to an electrical power source with a switch means for selectively energizing said light source. An actuator means for controlling the on-off operation of the switch means is connected to a light sensor which responses to the illumination level of the interior space. A limit switch carried adjacent to the actuator limits the movement of the actuator within a predetermined range so as to prevent further movement thereof during detection of erroneous illumination conditions.

Demonstration of a Low Cost, High-Speed Fiber Optic Transceiver

DTIC Science & Technology

2002-09-01

200 610 (2) 800 600 (3) Diameter of cable(s) (mm) 0.125 3 7 (4) 100×10 (5) Weight (5 m cable, kg) (6) 0.008 0.1 0.51 0.5 Reliability ( MTTF hrs...Based on 1E7 hour MTTF number from Honeywell preliminary data sheet (8) Based on 12 VCSELs, log-normal distribution, σ = 0.225 Technical...A009 on Form DD 1423-1 Optical Link for Radar Digital Processor Andrew Davidson, Terri L. Dooley, Grant R. Emmel, Robert A. Marsland, and

A numerical experiment on light pollution from distant sources

NASA Astrophysics Data System (ADS)

Kocifaj, M.

2011-08-01

To predict the light pollution of the night-time sky realistically over any location or measuring point on the ground presents quite a difficult calculation task. Light pollution of the local atmosphere is caused by stray light, light loss or reflection of artificially illuminated ground objects or surfaces such as streets, advertisement boards or building interiors. Thus it depends on the size, shape, spatial distribution, radiative pattern and spectral characteristics of many neighbouring light sources. The actual state of the atmospheric environment and the orography of the surrounding terrain are also relevant. All of these factors together influence the spectral sky radiance/luminance in a complex manner. Knowledge of the directional behaviour of light pollution is especially important for the correct interpretation of astronomical observations. From a mathematical point of view, the light noise or veil luminance of a specific sky element is given by a superposition of scattered light beams. Theoretical models that simulate light pollution typically take into account all ground-based light sources, thus imposing great requirements on CPU and MEM. As shown in this paper, a contribution of distant sources to the light pollution might be essential under specific conditions of low turbidity and/or Garstang-like radiative patterns. To evaluate the convergence of the theoretical model, numerical experiments are made for different light sources, spectral bands and atmospheric conditions. It is shown that in the worst case the integration limit is approximately 100 km, but it can be significantly shortened for light sources with cosine-like radiative patterns.

Losses, gain, and lasing in organic and perovskite active materials (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pourdavoud, Neda; Riedl, Thomas J.

2016-09-01

Organic solid state lasers (OSLs) based on semiconducting polymers or small molecules have seen some significant progress over the past decade. Highly efficient organic gain materials combined with high-Q resonator geometries (distributed feedback (DFB), VCSEL, etc.) have enabled OSLs, optically pumped by simple inorganic laser diodes or even LEDs. However, some fundamental goals remain to be reached, like continuous wave (cw) operation and injection lasing. I will address various loss mechanisms related to accumulated triplet excitons or long-lived polarons that in combination with the particular photo-physics of organic gain media state the dominant road-blocks on the way to reach these goals. I will discuss the recent progress in fundamental understanding of these loss processes, which now provides a solid basis for modelling, e.g. of laser dynamics. Avenues to mitigate these fundamental loss mechanisms, e.g. by alternative materials will be presented. In this regard, a class of gain materials based on organo-lead halide perovskites re-entered the scene as light emitters, recently. Enjoying a tremendous lot of attention as active material for solution processed solar cells with a 20+% efficiency, they have recently unveiled their exciting photo-physics for lasing applications. Optically pumped lasing in these materials has been achieved. I will discuss some of the unique properties that render this class of materials a promising candidate to overcome some of the limitations of "classical" organic gain media.

Hard and flexible optical printed circuit board

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, Hyun Sik; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.

2007-02-01

We report on the design and fabrication of hard and flexible optical printed circuit boards (O-PCBs). The objective is to realize generic and application-specific O-PCBs, either in hard form or flexible form, that are compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly, for low-cost and high-volume universal applications. The O-PCBs consist of 2-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate micro/nano-scale photonic devices. The micro/nano-optical functional devices include lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices. For flexible boards, the optical waveguide arrays are fabricated on flexible poly-ethylen terephthalate (PET) substrates by UV embossing. Electrical layer carrying VCSEL and PD array is laminated with the optical layer carrying waveguide arrays. Both hard and flexible electrical lines are replaced with high speed optical interconnection between chips over four waveguide channels up to 10Gbps on each. We discuss uses of hard or flexible O-PCBs for telecommunication systems, computer systems, transportation systems, space/avionic systems, and bio-sensor systems.

Long lifetime, low intensity light source for use in nighttime viewing of equipment maps and other writings

DOEpatents

Frank, Alan M.; Edwards, William R.

1983-01-01

A long-lifetime light source with sufficiently low intensity to be used for reading a map or other writing at nighttime, while not obscuring the user's normal night vision. This light source includes a diode electrically connected in series with a small power source and a lens properly positioned to focus at least a portion of the light produced by the diode.

Collimating lens for light-emitting-diode light source based on non-imaging optics.

PubMed

Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

2012-04-10

A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

Evaluation of OLED and edge-lit LED lighting panels

NASA Astrophysics Data System (ADS)

Mou, Xi; Narendran, Nadarajah; Zhu, Yiting; Freyssinier, Jean Paul

2016-09-01

Solid-state lighting (SSL) offers a new technology platform for lighting designers and end-users to illuminate spaces with low energy demand. Two types of SSL sources include organic light-emitting diodes (OLEDs) and light-emitting diodes (LEDs). OLED is an area light source, and its primary competing technology is the edge-lit LED panel. Generally, both of these technologies are considered similar in shape and appearance, but there is little understanding of how people perceive discomfort glare from large area light sources. The objective of this study was to evaluate discomfort glare for the two lighting technologies under similar operating conditions by gathering observers' reactions. The human factors study results showed no statistically significant difference in human response to discomfort glare between OLED and edge-lit LED panels when the two light sources produced the same lighting stimulus. This means both technologies appeared equally glary beyond a certain luminance.

Optical nulling apparatus and method for testing an optical surface

NASA Technical Reports Server (NTRS)

Olczak, Eugene (Inventor); Hannon, John J. (Inventor); Dey, Thomas W. (Inventor); Jensen, Arthur E. (Inventor)

2008-01-01

An optical nulling apparatus for testing an optical surface includes an aspheric mirror having a reflecting surface for imaging light near or onto the optical surface under test, where the aspheric mirror is configured to reduce spherical aberration of the optical surface under test. The apparatus includes a light source for emitting light toward the aspheric mirror, the light source longitudinally aligned with the aspheric mirror and the optical surface under test. The aspheric mirror is disposed between the light source and the optical surface under test, and the emitted light is reflected off the reflecting surface of the aspheric mirror and imaged near or onto the optical surface under test. An optical measuring device is disposed between the light source and the aspheric mirror, where light reflected from the optical surface under test enters the optical measuring device. An imaging mirror is disposed longitudinally between the light source and the aspheric mirror, and the imaging mirror is configured to again reflect light, which is first reflected from the reflecting surface of the aspheric mirror, onto the optical surface under test.

Flicker Vision of Selected Light Sources

NASA Astrophysics Data System (ADS)

Otomański, Przemysław; Wiczyński, Grzegorz; Zając, Bartosz

2017-10-01

The results of the laboratory research concerning a dependence of flicker vision on voltage fluctuations are presented in the paper. The research was realized on a designed measuring stand, which included an examined light source, a voltage generator with amplitude modulation supplying the light source and a positioning system of the observer with respect to the observed surface. In this research, the following light sources were used: one incandescent lamp and four LED luminaires by different producers. The research results formulate a conclusion concerning the description of the influence of voltage fluctuations on flicker viewing for selected light sources. The research results indicate that LED luminaires are less susceptible to voltage fluctuations than incandescent bulbs and that flicker vision strongly depends on the type of LED source.

Monolithic LED arrays, next generation smart lighting sources

NASA Astrophysics Data System (ADS)

Lagrange, Alexandre; Bono, Hubert; Templier, François

2016-03-01

LED have become the main light sources of the future as they open the path for intelligent use of light in time, intensity and color. In many usages, strong energy economy is done by adjusting these properties. The smart lighting has three dimensions, energy efficiency brought by GaN blue emitting LEDs, integration of electronics, sensors, microprocessors in the lighting system and development of new functionalities and services provided by the light. Monolithic LED arrays allow two major innovations, the spatial control of light emission and the adjustment of the electrical properties of the source.

High temperature, minimally invasive optical sensing modules

DOEpatents

Riza, Nabeel Agha [Oviedo, FL; Perez, Frank [Tujunga, CA

2008-02-05

A remote temperature sensing system includes a light source selectively producing light at two different wavelengths and a sensor device having an optical path length that varies as a function of temperature. The sensor receives light emitted by the light source and redirects the light along the optical path length. The system also includes a detector receiving redirected light from the sensor device and generating respective signals indicative of respective intensities of received redirected light corresponding to respective wavelengths of light emitted by the light source. The system also includes a processor processing the signals generated by the detector to calculate a temperature of the device.