Effect of placements (horizontal with vertical) on gas-solid flow and particle impact erosion in gate valve

NASA Astrophysics Data System (ADS)

Lin, Zhe; Zhu, Linhang; Cui, Baoling; Li, Yi; Ruan, Xiaodong

2014-12-01

Gate valve has various placements in the practical usages. Due to the effect of gravity, particle trajectories and erosions are distinct between placements. Thus in this study, gas-solid flow properties and erosion in gate valve for horizontal placement and vertical placement are discussed and compared by using Euler-Lagrange simulation method. The structure of a gate valve and a simplified structure are investigated. The simulation procedure is validated in our published paper by comparing with the experiment data of a pipe and an elbow. The results show that for all investigated open degrees and Stokes numbers (St), there are little difference of gas flow properties and flow coefficients between two placements. It is also found that the trajectories of particles for two placements are mostly identical when St « 1, making the erosion independent of placement. With the increase of St, the distinction of trajectories between placements becomes more obvious, leading to an increasing difference of the erosion distributions. Besides, the total erosion ratio of surface T for horizontal placement is two orders of magnitudes larger than that for vertical placement when the particle diameter is 250μm.

4. Historic American Buildings Survey E. W. Russell, Photographer, April ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

4. Historic American Buildings Survey E. W. Russell, Photographer, April 7, 1936 IRON GATE IN WALL (REAR) SURROUNDING U. S. MARINE HOSPITAL, CONGRESS STREET - U. S. Marine Hospital & Gates, 800 Saint Anthony Street, Mobile, Mobile County, AL

Charge plasma technique based dopingless accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement

NASA Astrophysics Data System (ADS)

Trivedi, Nitin; Kumar, Manoj; Haldar, Subhasis; Deswal, S. S.; Gupta, Mridula; Gupta, R. S.

2017-09-01

A charge plasma technique based dopingless (DL) accumulation mode (AM) junctionless (JL) cylindrical surrounding gate (CSG) MOSFET has been proposed and extensively investigated. Proposed device has no physical junction at source to channel and channel to drain interface. The complete silicon pillar has been considered as undoped. The high free electron density or induced N+ region is designed by keeping the work function of source/drain metal contacts lower than the work function of undoped silicon. Thus, its fabrication complexity is drastically reduced by curbing the requirement of high temperature doping techniques. The electrical/analog characteristics for the proposed device has been extensively investigated using the numerical simulation and are compared with conventional junctionless cylindrical surrounding gate (JL-CSG) MOSFET with identical dimensions. For the numerical simulation purpose ATLAS-3D device simulator is used. The results show that the proposed device is more short channel immune to conventional JL-CSG MOSFET and suitable for faster switching applications due to higher I ON/ I OFF ratio.

Self-aligned gated field emission devices using single carbon nanofiber cathodes

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Hensley, D. K.; Simpson, M. L.; Lowndes, D. H.

2002-11-01

We report on the fabrication and operation of integrated gated field emission devices using single vertically aligned carbon nanofiber (VACNF) cathodes where the gate aperture has been formed using a self-aligned technique based on chemical mechanical polishing. We find that this method for producing gated cathode devices easily achieves structures with gate apertures on the order of 2 mum that show good concentric alignment to the VACNF emitter. The operation of these devices was explored and field emission characteristics that fit well to the Fowler-Nordheim model of emission was demonstrated.

Observations on the Presumed LET Dependence of SEGR

NASA Technical Reports Server (NTRS)

Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

1998-01-01

Single-event gate rupture (SEGR)in vertical power MOSFETs is induced by charge deposited in the epitaxial region (below the gate oxide) in concert with the weakening of the oxide, both are a result of the ion passage.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Goto, Ken; Morikawa, Yoji; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

2018-06-01

A vertical β-Ga2O3 metal–oxide–semiconductor field-effect transistor featuring a planar-gate architecture is presented. The device was fabricated by an all-ion-implanted process without requiring trench etching or epitaxial regrowth. A Mg-ion-implanted current blocking layer (CBL) provided electrical isolation between the source and the drain except at an aperture opening through which drain current was conducted. Successful transistor action was realized by gating a Si-ion-implanted channel above the CBL. Thermal diffusion of Mg induced a large source–drain leakage current through the CBL, which resulted in compromised off-state device characteristics as well as a reduced peak extrinsic transconductance compared with the results of simulations.

Enhancing photoresponsivity using MoTe2-graphene vertical heterostructures

NASA Astrophysics Data System (ADS)

Kuiri, Manabendra; Chakraborty, Biswanath; Paul, Arup; Das, Subhadip; Sood, A. K.; Das, Anindya

2016-02-01

MoTe2 with a narrow band-gap of ˜1.1 eV is a promising candidate for optoelectronic applications, especially for the near-infrared photo detection. However, the photo responsivity of few layers MoTe2 is very small (<1 mA W-1). In this work, we show that a few layer MoTe2-graphene vertical heterostructures have a much larger photo responsivity of ˜20 mA W-1. The trans-conductance measurements with back gate voltage show on-off ratio of the vertical transistor to be ˜(0.5-1) × 105. The rectification nature of the source-drain current with the back gate voltage reveals the presence of a stronger Schottky barrier at the MoTe2-metal contact as compared to the MoTe2-graphene interface. In order to quantify the barrier height, it is essential to measure the work function of a few layers MoTe2, not known so far. We demonstrate a method to determine the work function by measuring the photo-response of the vertical transistor as a function of the Schottky barrier height at the MoTe2-graphene interface tuned by electrolytic top gating.

Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

NASA Astrophysics Data System (ADS)

Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

2017-03-01

Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

Novel CMOS photosensor with a gate-body tied NMOSFET structure

NASA Astrophysics Data System (ADS)

Kook, Youn-Jae; Jeong, Jae-Hun; Park, Young-June; Min, Hong-Shick

2000-07-01

A novel CMOS photosensor with a gate-body tied NMOSFET structure realized in the triple is well presented. The photocurrent is amplified by the lateral and vertical BJT action, which results in two different output photocurrents, which can be used for different applications within a pixel. The lateral action results in the drain current with a higher sensitivity at low light intensity. And the vertical action results in the collector current with uniform responsivity over wider range of the light intensity. The proposed photosensor in compatible with CMOS circuits.

Quantum teleportation of an arbitrary two-qubit state and its relation to multipartite entanglement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rigolin, Gustavo

2005-03-01

We explicitly show a protocol in which an arbitrary two qubit state vertical bar {phi}>=a vertical bar 00>+b vertical bar 01>+c vertical bar 10>+d vertical bar 11> is faithfully and deterministically teleported from Alice to Bob. We construct the 16 orthogonal generalized Bell states that can be used to teleport the two qubits. The local operations Bob must perform on his qubits in order to recover the teleported state are also constructed. They are restricted only to single-qubit gates. This means that a controlled-NOT gate is not necessary to complete the protocol. A generalization where N qubits are teleported ismore » also shown. We define a generalized magic basis, which possesses interesting properties. These properties help us to suggest a generalized concurrence from which we construct a measure of entanglement that has a clear physical interpretation: A multipartite state has maximum entanglement if it is a genuine quantum teleportation channel.« less

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

PubMed

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

PubMed

Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian

2016-10-12

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe 2 and n-type multilayer WS 2 : (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe 2 /WS 2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

NASA Astrophysics Data System (ADS)

Guerfi, Youssouf; Larrieu, Guilhem

2016-04-01

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.

Dynamically tunable electromagnetically induced transparency analogy in terahertz metamaterial

NASA Astrophysics Data System (ADS)

Liu, Chenxi; Liu, Peiguo; Bian, Lian; Zhou, Qihui; Li, Gaosheng; Liu, Hanqin

2018-03-01

A metamaterial analogy of tunable electromagnetically induced transparency (EIT) is theoretically investigated in terahertz regime. The proposed metamaterial consists of vertical gold strips and horizontal graphene wires, which perform as bright elements and dark elements, respectively. The EIT-like phenomenon can be induced by bright-dark mode coupling on condition of structural lateral displacement. Numerical result reveals that the EIT-like effect remains noticeable with a wide range of incidence polarization angles. Most importantly, by manipulating gate voltages, the EIT window can be dynamically controlled without refabricating the structure. The amplitude modulation depth can reach 81%, 79%, and 68% respectively at three characteristic frequencies as Fermi energy changes in the scope of 0.8-1.0 eV. Furthermore, a sensitivity of 0.95 THz per refractive index unit (RIU) is realized varying the refractive index in the surrounding medium. This structure provides potential applications for detectors, sensors, and modulators.

Vertical bloch line memory

NASA Technical Reports Server (NTRS)

Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-chuan (Inventor)

1995-01-01

A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density. High data transfer rate is achieved by operating all the layers in parallel. Using Hall effect sensing, and optical sensing via the Faraday effect to access the data from within the three-dimensional packages, an even higher data transfer rate can be achieved due to parallel operation within each layer.

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

NASA Astrophysics Data System (ADS)

Titus, Jeffrey L.

2013-06-01

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Hu, Guang-Xi; Wang, Ling-Li; Liu, Ran; Tang, Ting-Ao; Qiu, Zhi-Jun

2010-10-01

As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrödinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.

Sliding-gate valve for use with abrasive materials

DOEpatents

Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

1985-01-01

The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

Opportunity Surroundings on 3,000th Sol, Vertical Projection

NASA Image and Video Library

2012-09-07

This 360-degree vertical projection was assembled from images taken by the navigation camera on NASA Mars Exporation Rover Opportunity shows terrain surrounding the position where the rover spent its 3,000th Martian day.

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

NASA Astrophysics Data System (ADS)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts.

PubMed

Avsar, Ahmet; Marinov, Kolyo; Marin, Enrique Gonzalez; Iannaccone, Giuseppe; Watanabe, Kenji; Taniguchi, Takashi; Fiori, Gianluca; Kis, Andras

2018-05-01

New device concepts can increase the functionality of scaled electronic devices, with reconfigurable diodes allowing the design of more compact logic gates being one of the examples. In recent years, there has been significant interest in creating reconfigurable diodes based on ultrathin transition metal dichalcogenide crystals due to their unique combination of gate-tunable charge carriers, high mobility, and sizeable band gap. Thanks to their large surface areas, these devices are constructed under planar geometry and the device characteristics are controlled by electrostatic gating through rather complex two independent local gates or ionic-liquid gating. In this work, similar reconfigurable diode action is demonstrated in a WSe 2 transistor by only utilizing van der Waals bonded graphene and Co/h-BN contacts. Toward this, first the charge injection efficiencies into WSe 2 by graphene and Co/h-BN contacts are characterized. While Co/h-BN contact results in nearly Schottky-barrier-free charge injection, graphene/WSe 2 interface has an average barrier height of ≈80 meV. By taking the advantage of the electrostatic transparency of graphene and the different work-function values of graphene and Co/h-BN, vertical devices are constructed where different gate-tunable diode actions are demonstrated. This architecture reveals the opportunities for exploring new device concepts. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

Vertical phase separation of 6,13-bis(triisopropylsilylethynyl) pentacene/poly(methyl methacrylate) blends prepared by electrostatic spray deposition for organic field-effect transistors

NASA Astrophysics Data System (ADS)

Onojima, Norio; Hara, Kazuhiro; Nakamura, Ayato

2017-05-01

Blend films composed of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) and poly(methyl methacrylate) (PMMA) were prepared by electrostatic spray deposition (ESD). ESD is considered as an intermediate process between dry and wet processes since the solvent present in small droplets can almost be evaporated before arriving at the substrate. Post-drying treatments with the time-consuming evaporation of residual solvents can be omitted. However, it is still not clear that a vertically phase-separated structure can be formed in the ESD process since the vertical phase separation of the blend films is associated with the solvent evaporation. In this study, we fabricated bottom-gate, top-contact organic field-effect transistors based on the blend films prepared by ESD and the devices exhibited transistor behavior with small hysteresis. This result demonstrates that the vertical phase separation of a blend film (upper TIPS pentacene active layer/bottom PMMA gate insulator) can occur in the facile one-step ESD process.

Glow phenomenon surrounding the vertical stabilizer and OMS pods

NASA Image and Video Library

1994-03-05

STS062-42-026 (4-18 March 1994) --- This 35mm frame, photographed as the Space Shuttle Columbia was orbiting Earth during a "night" pass, documents the glow phenomenon surrounding the vertical stabilizer and the Orbital Maneuvering System (OMS) pods of the spacecraft.

Model simulations of potential contribution of the proposed Huangpu Gate to flood control in the Lake Taihu basin of China

NASA Astrophysics Data System (ADS)

Zhang, Hanghui; Liu, Shuguang; Ye, Jianchun; Yeh, Pat J.-F.

2017-10-01

The Lake Taihu basin (36 895 km2), one of the most developed regions in China located in the hinterland of the Yangtze River Delta, has experienced increasing flood risk. The largest flood in history occurred in 1999 with a return period estimate of 200 years, considerably larger than the current capacity of the flood defense with a design return period of 50 years. Due to its flat saucer-like terrain, the capacity of the flood control system in this basin depends on flood control infrastructures and peripheral tidal conditions. The Huangpu River, an important river of the basin connecting Lake Taihu upstream and Yangtze River estuaries downstream, drains two-fifths of the entire basin. Since the water level in the Huangpu River is significantly affected by the high tide conditions in estuaries, constructing an estuary gate is considered an effective solution for flood mitigation. The main objective of this paper is to assess the potential contributions of the proposed Huangpu Gate to the flood control capacity of the basin. To achieve this goal, five different scenarios of flooding conditions and the associated gate operations are considered by using numerical model simulations. Results of quantitative analyses show that the Huangpu Gate is effective for evacuating floodwaters. It can help to reduce both peak values and duration of high water levels in Lake Taihu to benefit surrounding areas along the Taipu Canal and the Huangpu River. The contribution of the gate to the flood control capacity is closely associated with its operation modes and duration. For the maximum potential contribution of the gate, the net outflow at the proposed site is increased by 52 %. The daily peak level is decreased by a maximum of 0.12 m in Lake Taihu, by maxima of 0.26-0.37 and 0.46-0.60 m in the Taipu Canal and the Huangpu River, respectively, and by 0.05-0.39 m in the surrounding areas depending on the local topography. It is concluded that the proposed Huangpu Gate can reduce flood risk in the Lake Taihu basin, especially in those low-lying surrounding areas along the Taipu Canal and the Huangpu River significantly, which is of great benefit to the flood management in the basin and the Yangtze River Delta.

Old River Low-Sill Control Structure. Report 1: Downpull Forces on Vertical-Lift Gates: Hydraulic Model Investigation

DTIC Science & Technology

1956-12-01

34- 25 I I I POOL I I \\ 1 I v Alt VrTS I 0 f TAILWJ.J v GATE COf!TACTS NAPPE I z Q 20 >- ~ w _J 15 w / c_ r- 1-1-- [/> NlPPE OVERTOPS GATE...Q. 40 • 0 ... 0 35 Q. J 0:: 30 w ~ 0 ...J ... 25 0 z 0 20 I\\ POOL [5 "A;t VrTS jTAILWJJ t= ~ w ...J 15 r== == / GATE CONTACT...vGATE CONTACT,S NAPPE 30 w ~ 0 ..1 "- 25 0 z 0 20 ;::: ~ w ..1 15 w 10 ~ [> A’l VrTS 1\\ ~~ !iTAILWAt) 1\\ 0 z "- 1-=:1=:- 1\\ < w ..1

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; Agarwal, Anchal; Ahmadi, Elaheh; Mahadeva Bhat, K.; Laurent, Matthew A.; Keller, Stacia; Chowdhury, Srabanti

2017-08-01

In this work, a study of two different types of current aperture vertical electron transistor (CAVET) with ion-implanted blocking layer are presented. The device fabrication and performance limitation of a CAVET with a dielectric gate is discussed, and the breakdown limiting structure is evaluated using on-wafer test structures. The gate dielectric limited the device breakdown to 50V, while the blocking layer was able to withstand over 400V. To improve the device performance, an alternative CAVET structure with a p-GaN gate instead of dielectric is designed and realized. The pGaN gated CAVET structure increased the breakdown voltage to over 400V. Measurement of test structures on the wafer showed the breakdown was limited by the blocking layer instead of the gate p-n junction.

Multicontrol Over Graphene–Molecule Hetereojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yun-Peng; Fry, James N.; Cheng, Hai-Ping

The vertical configuration is a powerful tool recently developed experimentally to investigate field effects in quasi two-dimensional systems. Prototype graphene-based vertical tunneling transistors can achieve an extraordinary control over current density utilizing gate voltages. In this work, we study theoretically vertical tunneling junctions that consist of a monolayer of photoswitchable aryl azobenzene molecules sandwiched between two sheets of graphene. Azobenzene molecules transform between trans and cis conformations upon photoexcitation, thus adding a second knob that enhances the control over physical properties of the junction. Using first-principles methods within the density functional framework, we perform simulations with the inclusion of fieldmore » effects for both trans and cis configurations. Lastly, we find that the interference of interface states resulting from molecule–graphene interactions at the Fermi energy introduces a dual-peak pattern in the transmission functions and dominates the transport properties of gate junctions, shedding new light on interfacial processes.« less

Multicontrol Over Graphene–Molecule Hetereojunctions

DOE PAGES

Wang, Yun-Peng; Fry, James N.; Cheng, Hai-Ping

2017-09-15

The vertical configuration is a powerful tool recently developed experimentally to investigate field effects in quasi two-dimensional systems. Prototype graphene-based vertical tunneling transistors can achieve an extraordinary control over current density utilizing gate voltages. In this work, we study theoretically vertical tunneling junctions that consist of a monolayer of photoswitchable aryl azobenzene molecules sandwiched between two sheets of graphene. Azobenzene molecules transform between trans and cis conformations upon photoexcitation, thus adding a second knob that enhances the control over physical properties of the junction. Using first-principles methods within the density functional framework, we perform simulations with the inclusion of fieldmore » effects for both trans and cis configurations. Lastly, we find that the interference of interface states resulting from molecule–graphene interactions at the Fermi energy introduces a dual-peak pattern in the transmission functions and dominates the transport properties of gate junctions, shedding new light on interfacial processes.« less

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Sasaki, Kohei; Thieu, Quang Tu; Wakimoto, Daiki; Koishikawa, Yuki; Kuramata, Akito; Yamakoshi, Shigenobu

2017-12-01

We developed depletion-mode vertical Ga2O3 trench metal-oxide-semiconductor field-effect transistors by using n+ contact and n- drift layers. These epilayers were grown on an n+ (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy. Cu and HfO2 were used for the gate metal and dielectric film, respectively. The mesa width and gate length were approximately 2 and 1 µm, respectively. The devices showed good DC characteristics, with a specific on-resistance of 3.7 mΩ cm2 and clear current modulation. An on-off ratio of approximately 103 was obtained.

P50 Sensory Gating and Attentional Performance

PubMed Central

Wan, Li; Friedman, Bruce H.; Boutros, Nash N.; Crawford, Helen J.

2008-01-01

Sensory gating refers to the preattentional filtering of irrelevant sensory stimuli. This process may be impaired in schizotypy, which is a trait also associated with cigarette smoking. This association may in part stem from the positive effects of smoking on sensory gating and attention. The relationship among sensory gating, smoking, schizotypy and attention was examined in 39 undergraduates. Sensory gating was indexed by the P50 suppression paradigm, and attention was measured by the Attention Network Test (ANT) and a Stroop task. Results showed sensory gating to be positively correlated with performances on ANT and Stroop reflected in better alerting, less conflict between stimuli, faster reaction time, and greater accuracy. Smokers showed a pattern of a greater number of significant correlations between sensory gating and attention in comparison to non-smokers, although the relationship between sensory gating and attention was not affected by schizotypy. The majority of significant correlations were found in the region surrounding Cz. These findings are discussed relative to the potential modifying influence of smoking and schizotypy on sensory gating and attention. PMID:18036692

Operation of a gated field emitter using an individual carbon nanofiber cathode

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Ellis, E. D.; Britton, C. L.; Simpson, M. L.; Lowndes, D. H.; Baylor, L. R.

2001-11-01

We report on the operation of an integrated gated cathode device using a single vertically aligned carbon nanofiber as the field emission element. This device is capable of operation in a moderate vacuum for extended periods of time without experiencing a degradation of performance. Less than 1% of the total emitted current is collected by the gate electrode, indicating that the emitted electron beam is highly collimated. As a consequence, this device is ideal for applications that require well-focused electron emission from a microscale structure.

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

NASA Astrophysics Data System (ADS)

Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu

2018-06-01

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young’s approximation based solution for one-dimensional Poisson’s equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel’s surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Yongsuk; Kang, Junmo; Jariwala, Deep

2016-03-22

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm-2) and on/off current ratios (>104) in a narrow voltage window (<3 V).

Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

NASA Astrophysics Data System (ADS)

Zhang, Zheng; Du, Junli; Li, Bing; Zhang, Shuhao; Hong, Mengyu; Zhang, Xiaomei; Liao, Qingliang; Zhang, Yue

2017-08-01

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.

LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David

2013-01-21

A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltagemore » and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.« less

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

PubMed

Kanaki, Toshiki; Yamasaki, Hiroki; Koyama, Tomohiro; Chiba, Daichi; Ohya, Shinobu; Tanaka, Masaaki

2018-05-08

A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor GaMnAs-based vertical spin MOSFET with a GaAs channel layer, we demonstrate a large drain-source current I DS modulation by a gate-source voltage V GS with a modulation ratio up to 130%, which is the largest value that has ever been reported for vertical spin field-effect transistors thus far. We find that the electric field effect on indirect tunneling via defect states in the GaAs channel layer is responsible for the large I DS modulation. This device shows a tunneling magnetoresistance (TMR) ratio up to ~7%, which is larger than that of the planar-type spin MOSFETs, indicating that I DS can be controlled by the magnetization configuration. Furthermore, we find that the TMR ratio can be modulated by V GS . This result mainly originates from the electric field modulation of the magnetic anisotropy of the GaMnAs ferromagnetic electrodes as well as the potential modulation of the nonmagnetic semiconductor GaAs channel layer. Our findings provide important progress towards high-performance vertical spin MOSFETs.

Nonadiabatic conditional geometric phase shift with NMR.

PubMed

Xiang-Bin, W; Keiji, M

2001-08-27

A conditional geometric phase shift gate, which is fault tolerant to certain types of errors due to its geometric nature, was realized recently via nuclear magnetic resonance (NMR) under adiabatic conditions. However, in quantum computation, everything must be completed within the decoherence time. The adiabatic condition makes any fast conditional Berry phase (cyclic adiabatic geometric phase) shift gate impossible. Here we show that by using a newly designed sequence of simple operations with an additional vertical magnetic field, the conditional geometric phase shift gate can be run nonadiabatically. Therefore geometric quantum computation can be done at the same rate as usual quantum computation.

A localized interaction surface for voltage-sensing domains on the pore domain of a K+ channel.

PubMed

Li-Smerin, Y; Hackos, D H; Swartz, K J

2000-02-01

Voltage-gated K+ channels contain a central pore domain and four surrounding voltage-sensing domains. How and where changes in the structure of the voltage-sensing domains couple to the pore domain so as to gate ion conduction is not understood. The crystal structure of KcsA, a bacterial K+ channel homologous to the pore domain of voltage-gated K+ channels, provides a starting point for addressing this question. Guided by this structure, we used tryptophan-scanning mutagenesis on the transmembrane shell of the pore domain in the Shaker voltage-gated K+ channel to localize potential protein-protein and protein-lipid interfaces. Some mutants cause only minor changes in gating and when mapped onto the KcsA structure cluster away from the interface between pore domain subunits. In contrast, mutants producing large changes in gating tend to cluster near this interface. These results imply that voltage-sensing domains interact with localized regions near the interface between adjacent pore domain subunits.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

PubMed

Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

2015-09-30

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE PAGES

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; ...

2015-09-09

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors

NASA Astrophysics Data System (ADS)

Davidović, Vojkan; Danković, Danijel; Ilić, Aleksandar; Manić, Ivica; Golubović, Snežana; Djorić-Veljković, Snežana; Prijić, Zoran; Prijić, Aneta; Stojadinović, Ninoslav

2018-04-01

The mechanisms responsible for the effects of consecutive irradiation and negative bias temperature (NBT) stress in p-channel power vertical double-diffused MOS (VDMOS) transistors are presented in this paper. The investigation was performed in order to clarify the mechanisms responsible for the effects of specific kind of stress in devices previously subjected to the other kind of stress. In addition, it may help in assessing the behaviour of devices subjected to simultaneous irradiation and NBT stressing. It is shown that irradiation of previously NBT stressed devices leads to additional build-up of oxide trapped charge and interface traps, while NBT stress effects in previously irradiated devices depend on gate bias applied during irradiation and on the total dose received. In the cases of low-dose irradiation or irradiation without gate bias, the subsequent NBT stress leads to slight further device degradation. On the other hand, in the cases of devices previously irradiated to high doses or with gate bias applied during irradiation, NBT stress may have a positive role, as it actually anneals a part of radiation-induced degradation.

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber.

PubMed

Pradhan, Rajib

2014-06-10

This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Factors influencing resident's decision to reside in gated and guarded community

NASA Astrophysics Data System (ADS)

Shamsudin, Zarina; Shamsudin, Shafiza; Zainal, Rozlin

2017-10-01

Gated communities are residential areas developed with restricted access with strictly controlled entrances and surrounded by a close perimeter of wall or fences. Developers, conscious of the need to fulfill the requirement of living in modern and sophisticated lifestyle and gated properties become the trend and mushroomed over the past decade. Nowadays, it is obvious that gated and guarded communities become almost a dominant feature of Malaysia housing development projects. The focus of this paper is to identify the factors contribute resident's decision to reside in gated and guarded community and to study social interaction among gated communities' residents. 150 questionnaires were distributed to the residents of selected gated and guarded community area in order to achieve the objectives and analyzed by using Statistical Package for Social Science (SPSS) and descriptive analysis. The result was tabulated and presented in charts and graphs for a clear and better understanding. The five main factors contribute to resident decision to reside in gated communities were identified and ranked; there are privacy, security, location, lifestyle and prestige. Besides, the residents are feeling neutral towards the facilities and services provided in their gated and guarded residential area. A comprehensive improvement towards the facilities and services is needed to reach higher satisfaction from the residents.

Expression and distribution of voltage-gated ion channels in ferret sinoatrial node.

PubMed

Brahmajothi, Mulugu V; Morales, Michael J; Campbell, Donald L; Steenbergen, Charles; Strauss, Harold C

2010-10-01

Spontaneous diastolic depolarization in the sinoatrial (SA) node enables it to serve as pacemaker of the heart. The variable cell morphology within the SA node predicts that ion channel expression would be heterogeneous and different from that in the atrium. To evaluate ion channel heterogeneity within the SA node, we used fluorescent in situ hybridization to examine ion channel expression in the ferret SA node region and atrial appendage. SA nodal cells were distinguished from surrounding cardiac myocytes by expression of the slow (SA node) and cardiac (surrounding tissue) forms of troponin I. Nerve cells in the sections were identified by detection of GAP-43 and cytoskeletal middle neurofilament. Transcript expression was characterized for the 4 hyperpolarization-activated cation channels, 6 voltage-gated Na(+) channels, 3 voltage-gated Ca(2+) channels, 24 voltage-gated K(+) channel α-subunits, and 3 ancillary subunits. To ensure that transcript expression was representative of protein expression, immunofluorescence was used to verify localization patterns of voltage-dependent K(+) channels. Colocalizations were performed to observe any preferential patterns. Some overlapping and nonoverlapping binding patterns were observed. Measurement of different cation channel transcripts showed heterogeneous expression with many different patterns of expression, attesting to the complexity of electrical activity in the SA node. This study provides insight into the possible role ion channel heterogeneity plays in SA node pacemaker activity.

Nanowire systems: technology and design

PubMed Central

Gaillardon, Pierre-Emmanuel; Amarù, Luca Gaetano; Bobba, Shashikanth; De Marchi, Michele; Sacchetto, Davide; De Micheli, Giovanni

2014-01-01

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behaviour of the nanostructure by selectively enabling one type of carriers. These transistors work as switches with electrically programmable polarity and thus realize an exclusive or operation. The intrinsic higher expressive power of these FETs, when compared with standard complementary metal oxide semiconductor technology, enables us to realize more efficient logic gates, which we organize as tiles to realize nanowire systems by regular arrays. This article surveys both the technology for double independent gate FETs as well as physical and logic design tools to realize digital systems with this fabrication technology. PMID:24567471

RF dual-gate-trench LDMOS on InGaAs with improved performance

NASA Astrophysics Data System (ADS)

Payal, M.; Singh, Y.

2018-02-01

A new power dual-gate-trench LDMOSFET (DGTLDMOS) structure implemented on emerging InGaAs material is proposed. The proposed device consists of two gates out of which one gate is placed horizontally on the surface while other gate is located vertically in a trench. The dual-gate structure of DGTLDMOS creates two channels in p-base which carry current simultaneously from drain to source. This not only enhances the drain current (ID) but also reduces specific on-resistance (Ron,sp) and improves the peak transconductance (gm) resulting higher cut-off frequency (fT) and maximum oscillation frequency (fmax). Another trench filled with Al2O3 is placed in the drift region between gate and drain to enhance reduced-surface-field effect leading to higher breakdown voltage (Vbr) even at increased drift region doping. Based on 2D simulations, it is demonstrate that a DGTLDMOS designed for Vbr of 90 V achieves 2.2 times higher ID, 10 times reduction in Ron,sp, 1.8 times improvement in gm, 2.8 times increase in fT, and 1.8 times improvement in fmax with 3.3 times reduction in cell pitch as compared to the conventional LDMOS.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

PubMed

Xu, Jinyou; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2017-11-08

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

ZnO-based multiple channel and multiple gate FinMOSFETs

NASA Astrophysics Data System (ADS)

Lee, Ching-Ting; Huang, Hung-Lin; Tseng, Chun-Yen; Lee, Hsin-Ying

2016-02-01

In recent years, zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted much attention, because ZnO-based semiconductors possess several advantages, including large exciton binding energy, nontoxicity, biocompatibility, low material cost, and wide direct bandgap. Moreover, the ZnO-based MOSFET is one of most potential devices, due to the applications in microwave power amplifiers, logic circuits, large scale integrated circuits, and logic swing. In this study, to enhance the performances of the ZnO-based MOSFETs, the ZnObased multiple channel and multiple gate structured FinMOSFETs were fabricated using the simple laser interference photolithography method and the self-aligned photolithography method. The multiple channel structure possessed the additional sidewall depletion width control ability to improve the channel controllability, because the multiple channel sidewall portions were surrounded by the gate electrode. Furthermore, the multiple gate structure had a shorter distance between source and gate and a shorter gate length between two gates to enhance the gate operating performances. Besides, the shorter distance between source and gate could enhance the electron velocity in the channel fin structure of the multiple gate structure. In this work, ninety one channels and four gates were used in the FinMOSFETs. Consequently, the drain-source saturation current (IDSS) and maximum transconductance (gm) of the ZnO-based multiple channel and multiple gate structured FinFETs operated at a drain-source voltage (VDS) of 10 V and a gate-source voltage (VGS) of 0 V were respectively improved from 11.5 mA/mm to 13.7 mA/mm and from 4.1 mS/mm to 6.9 mS/mm in comparison with that of the conventional ZnO-based single channel and single gate MOSFETs.

Context-specific adaptation of pursuit initiation in humans

NASA Technical Reports Server (NTRS)

Takagi, M.; Abe, H.; Hasegawa, S.; Usui, T.; Hasebe, H.; Miki, A.; Zee, D. S.; Shelhauser, M. (Principal Investigator)

2000-01-01

PURPOSE: To determine if multiple states for the initiation of pursuit, as assessed by acceleration in the "open-loop" period, can be learned and gated by context. METHODS: Four normal subjects were studied. A modified step-ramp paradigm for horizontal pursuit was used to induce adaptation. In an increasing paradigm, target velocity doubled 230 msec after onset; in a decreasing paradigm, it was halved. In the first experiment, vertical eye position (+/-5 degrees ) was used as the context cue, and the training paradigm (increasing or decreasing) changed with vertical eye position. In the second experiment, with vertical position constant, when the target was red, training was decreasing, and when green, increasing. The average eye acceleration in the first 100 msec of tracking was the index of open-loop pursuit performance. RESULTS: With vertical position as the cue, pursuit adaptation differed between up and down gaze. In some cases, the direction of adaptation was in exact accord with the training stimuli. In others, acceleration increased or decreased for both up and down gaze but always in correct relative proportion to the training stimuli. In contrast, multiple adaptive states were not induced with color as the cue. CONCLUSIONS: Multiple values for the relationship between the average eye acceleration during the initiation of pursuit and target velocity could be learned and gated by context. Vertical position was an effective contextual cue but not target color, implying that useful contextual cues must be similar to those occurring naturally, for example, orbital position with eye muscle weakness.

Effects of morphological control on the characteristics of vertical-type OTFTs using Alq3.

PubMed

Kim, Young Do; Park, Jong Wook; Kang, In Nam; Oh, Se Young

2008-09-01

We have fabricated vertical-type organic thin-film transistors (OTFTs) using tris-(8-hydroxyquinoline) aluminum (Alq(3)) as an n-type active material. Vertical-type OTFT using Alq(3) has a layered structure of Al(source electrode)/Alq(3)(active layer)/Al(gate electrode)/Alq(3)(active layer)/ITO glass(drain electrode). Alq(3) thin films containing various surface morphologies could be obtained by the control of evaporation rate and substrate temperature. The effects of the morphological control of Alq(3) thin layer on the grain size and the flatness of film surface were investigated. The characteristics of vertical-type OTFT significantly influenced the growth condition of Alq(3) layer.

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

Structure-based membrane dome mechanism for Piezo mechanosensitivity

PubMed Central

Guo, Yusong R

2017-01-01

Mechanosensitive ion channels convert external mechanical stimuli into electrochemical signals for critical processes including touch sensation, balance, and cardiovascular regulation. The best understood mechanosensitive channel, MscL, opens a wide pore, which accounts for mechanosensitive gating due to in-plane area expansion. Eukaryotic Piezo channels have a narrow pore and therefore must capture mechanical forces to control gating in another way. We present a cryo-EM structure of mouse Piezo1 in a closed conformation at 3.7Å-resolution. The channel is a triskelion with arms consisting of repeated arrays of 4-TM structural units surrounding a pore. Its shape deforms the membrane locally into a dome. We present a hypothesis in which the membrane deformation changes upon channel opening. Quantitatively, membrane tension will alter gating energetics in proportion to the change in projected area under the dome. This mechanism can account for highly sensitive mechanical gating in the setting of a narrow, cation-selective pore. PMID:29231809

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

PubMed

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng; Zhou, Peng

2018-04-01

2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field-effect transistors. However, 2DLM-based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM-based integrated circuits based on amplifier circuits.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures

PubMed Central

Yan, Xiao; Zhang, David Wei; Liu, Chunsen; Bao, Wenzhong; Wang, Shuiyuan; Ding, Shijin; Zheng, Gengfeng

2018-01-01

Abstract 2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS2/GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits. PMID:29721428

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

PubMed

Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

2017-09-26

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

An Integrated Gate Driver in 4H-SiC for Power Converter Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ericson, Milton Nance; Frank, Steven Shane; Britton, Charles

2014-01-01

A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including risemore » and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300 C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.« less

Actuation and transduction of resonant vibrations in GaAs/AlGaAs-based nanoelectromechanical systems containing two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shevyrin, A. A., E-mail: shevandrey@isp.nsc.ru; Pogosov, A. G.; Bakarov, A. K.

2015-05-04

Driven vibrations of a nanoelectromechanical system based on GaAs/AlGaAs heterostructure containing two-dimensional electron gas are experimentally investigated. The system represents a conductive cantilever with the free end surrounded by a side gate. We show that out-of-plane flexural vibrations of the cantilever are driven when alternating signal biased by a dc voltage is applied to the in-plane side gate. We demonstrate that these vibrations can be on-chip linearly transduced into a low-frequency electrical signal using the heterodyne down-mixing method. The obtained data indicate that the dominant physical mechanism of the vibrations actuation is capacitive interaction between the cantilever and the gate.

Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.

PubMed

Liu, Yifan; Yobas, Levent

2016-04-26

Here, we present an experimental demonstration of slowing DNA translocation across a nanochannel by modulating the channel surface charge through an externally applied gate bias. The experiments were performed on a nanofluidic field-effect transistor, which is a monolithic integrated platform featuring a 50 nm-diameter in-plane alumina nanocapillary whose entire length is surrounded by a gate electrode. The field-effect transistor behavior was validated on the gating of ionic conductance and protein transport. The gating of DNA translocation was subsequently studied by measuring discrete current dips associated with single λ-DNA translocation events under a source-to-drain bias of 1 V. The translocation speeds under various gate bias conditions were extracted by fitting event histograms of the measured translocation time to the first passage time distributions obtained from a simple 1D biased diffusion model. A positive gate bias was observed to slow the translocation of single λ-DNA chains markedly; the translocation speed was reduced by an order of magnitude from 18.4 mm/s obtained under a floating gate down to 1.33 mm/s under a positive gate bias of 9 V. Therefore, a dynamic and flexible regulation of the DNA translocation speed, which is vital for single-molecule sequencing, can be achieved on this device by simply tuning the gate bias. The device is realized in a conventional semiconductor microfabrication process without the requirement of advanced lithography, and can be potentially further developed into a compact electronic single-molecule sequencer.

SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, X; Cao, D; Housley, D

2014-06-01

Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-movingmore » platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.« less

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

PubMed

Roy, Tania; Tosun, Mahmut; Cao, Xi; Fang, Hui; Lien, Der-Hsien; Zhao, Peida; Chen, Yu-Ze; Chueh, Yu-Lun; Guo, Jing; Javey, Ali

2015-02-24

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of ∼80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in semiconductor vdW heterostructures with important implications toward the design of atomically thin tunnel transistors.

Sand waves at the mouth of San Francisco Bay, California

USGS Publications Warehouse

Gibbons, Helen; Barnard, Patrick L.

2007-01-01

The U.S. Geological Survey; California State University, Monterey Bay; U.S. Army Corps of Engineers; National Oceanic and Atmospheric Administration; and Center for Integrative Coastal Observation, Research and Education partnered to map central San Francisco Bay and its entrance under the Golden Gate Bridge using multibeam echosounders. View eastward, through the Golden Gate into central San Francisco Bay. Depth of sea floor color coded: red (less than 10 m deep) to purple (more than 100 m deep). Land from USGS digital orthophotographs (DOQs) overlaid on USGS digital elevation models (DEMs). Sand waves in this view average 6 m in height and 80 m from crest to crest. Golden Gate Bridge is about 2 km long. Vertical exaggeration is approximately 4x for sea floor, 2x for land.

Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs

NASA Astrophysics Data System (ADS)

Huynh-Bao, Trong; Ryckaert, Julien; Sakhare, Sushil; Mercha, Abdelkarim; Verkest, Diederik; Thean, Aaron; Wambacq, Piet

2016-03-01

In this paper, we present a layout and performance analysis of logic and SRAM circuits for vertical and lateral GAA FETs using 5nm (iN5) design rules. Extreme ultra-violet lithography (EUVL) processes are exploited to print the critical features: 32 nm gate pitch and 24 nm metal pitch. Layout architectures and patterning compromises for enabling the 5nm node will be discussed in details. A distinct standard-cell template for vertical FETs is proposed and elaborated for the first time. To assess electrical performances, a BSIM-CMG model has been developed and calibrated with TCAD simulations, which accounts for the quasi-ballistic transport in the nanowire channel. The results show that the inbound power rail layout construct for vertical devices could achieve the highest density while the interleaving diffusion template can maximize the port accessibility. By using a representative critical path circuit of a generic low power SoCs, it is shown that the VFET-based circuit is 40% more energy efficient than LFET designs at iso-performance. Regarding SRAMs, benefits given by vertical channel orientation in VFETs has reduced the SRAM area by 20%~30% compared to lateral SRAMs. A double exposures with EUV canner is needed to reach a minimum tip-to-tip (T2T) of 16 nm for middle-of-line (MOL) layers. To enable HD SRAMs with two metal layers, a fully self-aligned gate contact for LFETs and 2D routing of the top electrode for VFETs are required. The standby leakage of vertical SRAMs is 4~6X lower than LFET-based SRAMs at iso-performance and iso-area. The minimum operating voltage (Vmin) of vertical SRAMs is 170 mV lower than lateral SRAMs. A high-density SRAM bitcell of 0.014 um2 can be obtained for the iN5 technology node, which fully follows the SRAM scaling trend for the 45nm nodes and beyond.

Structure-based membrane dome mechanism for Piezo mechanosensitivity.

PubMed

Guo, Yusong R; MacKinnon, Roderick

2017-12-12

Mechanosensitive ion channels convert external mechanical stimuli into electrochemical signals for critical processes including touch sensation, balance, and cardiovascular regulation. The best understood mechanosensitive channel, MscL, opens a wide pore, which accounts for mechanosensitive gating due to in-plane area expansion. Eukaryotic Piezo channels have a narrow pore and therefore must capture mechanical forces to control gating in another way. We present a cryo-EM structure of mouse Piezo1 in a closed conformation at 3.7Å-resolution. The channel is a triskelion with arms consisting of repeated arrays of 4-TM structural units surrounding a pore. Its shape deforms the membrane locally into a dome. We present a hypothesis in which the membrane deformation changes upon channel opening. Quantitatively, membrane tension will alter gating energetics in proportion to the change in projected area under the dome. This mechanism can account for highly sensitive mechanical gating in the setting of a narrow, cation-selective pore. © 2017, Guo et al.

The isolated voltage sensing domain of the Shaker potassium channel forms a voltage-gated cation channel.

PubMed

Zhao, Juan; Blunck, Rikard

2016-10-06

Domains in macromolecular complexes are often considered structurally and functionally conserved while energetically coupled to each other. In the modular voltage-gated ion channels the central ion-conducting pore is surrounded by four voltage sensing domains (VSDs). Here, the energetic coupling is mediated by interactions between the S4-S5 linker, covalently linking the domains, and the proximal C-terminus. In order to characterize the intrinsic gating of the voltage sensing domain in the absence of the pore domain, the Shaker Kv channel was truncated after the fourth transmembrane helix S4 (Shaker-iVSD). Shaker-iVSD showed significantly altered gating kinetics and formed a cation-selective ion channel with a strong preference for protons. Ion conduction in Shaker-iVSD developed despite identical primary sequence, indicating an allosteric influence of the pore domain. Shaker-iVSD also displays pronounced 'relaxation'. Closing of the pore correlates with entry into relaxation suggesting that the two processes are energetically related.

Towards Self-Clocked Gated OCDMA Receiver

NASA Astrophysics Data System (ADS)

Idris, S.; Osadola, T.; Glesk, I.

2013-02-01

A novel incoherent OCDMA receiver with incorporated all-optical clock recovery for self-synchronization of a time gate for the multi access interferences (MAI) suppression and minimizing the effect of data time jitter in incoherent OCDMA system was successfully developed and demonstrated. The solution was implemented and tested in a multiuser environment in an out of the laboratory OCDMA testbed with two-dimensional wavelength-hopping time-spreading coding scheme and OC-48 (2.5 Gbp/s) data rate. The self-clocked all-optical time gate uses SOA-based fibre ring laser optical clock, recovered all-optically from the received OCDMA traffic to control its switching window for cleaning the autocorrelation peak from the surrounding MAI. A wider eye opening was achieved when the all-optically recovered clock from received data was used for synchronization if compared to a static approach with the RF clock being generated by a RF synthesizer. Clean eye diagram was also achieved when recovered clock is used to drive time gating.

Behavior-based vs. system-based training and displays for automated vertical guidance

DOT National Transportation Integrated Search

1997-04-01

Aircraft automation, particularly the automation surrounding vertical navigation has been cited as an area of training difficulty and a source of confusion during operation. A number of incidents and accidents have been attributed to a lack of crew u...

FIELD EVALUATION OF DIPOLE METHOD TO MEASURE AQUIFER ANISOTROPY

EPA Science Inventory

The ultimate size of a three-dimensional groundwater circulation cell surrounding a vertical circulation well (VCW) is a strong function of the aquifer hydraulic anisotropy, the ratio of the hydraulic conductivity in the horizontal direction to that in the vertical direction. In ...

FIELD APPLICATION OF DIPOLE METHOD TO MEASURE AQUIFER ANISOTROPHY

EPA Science Inventory

The ultimate size of a three-dimensional groundwater circulation cell surrounding a vertical circulation well (VCW) is a strong function of the aquifer hydraulic anisotrophy, the ratio of the hydraulic conductivity in the horizontal direction to that in the vertical direction. In...

High performance multi-finger MOSFET on SOI for RF amplifiers

NASA Astrophysics Data System (ADS)

Adhikari, M. Singh; Singh, Y.

2017-10-01

In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

Realization of Molecular-Based Transistors.

PubMed

Richter, Shachar; Mentovich, Elad; Elnathan, Roey

2018-06-06

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A case of survival of extreme vertical impact in seated position.

DOT National Transportation Integrated Search

1962-10-01

Physical, biophysical, and medical data are presented concerning the case of a 20-year-old male of excellent physical condition who jumped from the Golden Gate Bridge in San Francisco, surviving for ten days a free-fall deceleration in the seated pos...

Ambipolar Barristors for Reconfigurable Logic Circuits.

PubMed

Liu, Yuan; Zhang, Guo; Zhou, Hailong; Li, Zheng; Cheng, Rui; Xu, Yang; Gambin, Vincent; Huang, Yu; Duan, Xiangfeng

2017-03-08

Vertical heterostructures based on graphene have emerged as a unique architecture for novel electronic devices with unusual characteristics. Here we report a new design of vertical ambipolar barristors based on metal-graphene-silicon-graphene sandwich structure, using the bottom graphene as a gate-tunable "active contact", the top graphene as an adaptable Ohmic contact, and the low doping thin silicon layer as the switchable channel. Importantly, with finite density of states and weak screening effect of graphene, we demonstrate, for the first time, that both the carrier concentration and majority carrier type in the sandwiched silicon can be readily modulated by gate potential penetrating through graphene. It can thus enable a new type of ambipolar barristors with an ON-OFF ratio exceeding 10 3 . Significantly, these ambipolar barristors can be flexibly configured into either p-type or n-type transistors and used to create integrated circuits with reconfigurable logic functions. This unconventional device structure and ambipolar reconfigurable characteristics can open up exciting opportunities in future electronics based on graphene or two-dimensional van der Waals heterostructures.

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

PubMed

Lemaitre, Maxime G; Donoghue, Evan P; McCarthy, Mitchell A; Liu, Bo; Tongay, Sefaattin; Gila, Brent; Kumar, Purushottam; Singh, Rajiv K; Appleton, Bill R; Rinzler, Andrew G

2012-10-23

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

Surprising Loss of Symmetry of Magnesium Channel CorA Upon Gating | Center for Cancer Research

Cancer.gov

Magnesium ions (Mg2+) play essential roles in all living organisms. Bacteria and other prokaryotes rely upon the Mg2+-dependent channel CorA, which is composed of five identical subunits (A-E), to obtain these ions from their surroundings.

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

PubMed

Gluschke, J G; Seidl, J; Lyttleton, R W; Carrad, D J; Cochrane, J W; Lehmann, S; Samuelson, L; Micolich, A P

2018-06-27

We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 10 3 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface "self-cleaning" effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties.

Middle Electrode in a Vertical Transistor Structure Using an Sn Layer by Thermal Evaporation

NASA Astrophysics Data System (ADS)

Nogueira, Gabriel Leonardo; da Silva Ozório, Maiza; da Silva, Marcelo Marques; Morais, Rogério Miranda; Alves, Neri

2018-05-01

We report a process for performing the middle electrode for a vertical field effect transistor (VOFET) by the evaporation of a tin (Sn) layer. Bare aluminum oxide (Al2O3), obtained by anodization, and Al2O3 covered with a polymethylmethacrylate (PMMA) layer were used as the gate dielectric. We measured the electrical resistance of Sn while the evaporation was carried out to find the best condition to prepare the middle electrode, that is, good lateral conduction associated with openings that give permeability to the electric field in a vertical direction. This process showed that 55 nm Sn thick is suitable for use in a VOFET, being easier to achieve optimal thickness when the Sn is evaporated onto PMMA than onto bare Al2O3. The addition of a PMMA layer on the Al2O3 surface modifies the morphology of the Sn layer, resulting in a lowering of the threshold voltage. The values of threshold voltage and electric field, VTH = - 8 V and ETH = 354.5 MV/m respectively, were calculated using an Al2O3 film 20 nm thick covered with a 14 nm PMMA layer as gate dielectric, while for bare Al2O3 these values were VTH = - 10 V and ETH = 500 MV/m.

Guardians at the gate

PubMed Central

2009-01-01

Patents provide one of the few protections companies can avail themselves of to help protect their therapeutic monoclonal antibody products. Just as the therapeutic monoclonal antibody field is constantly evolving, so too is the legal environment surrounding these inventions. In a series of articles, the general state of the law surrounding therapeutic antibodies will be explained, and important challenges to this technology area will be discussed. Much is at stake when companies market therapeutic monoclonal antibodies; therefore, a firm understanding of this important form of protection is critically important for anyone developing such products. PMID:20068400

All-printed thin-film transistors from networks of liquid-exfoliated nanosheets

NASA Astrophysics Data System (ADS)

Kelly, Adam G.; Hallam, Toby; Backes, Claudia; Harvey, Andrew; Esmaeily, Amir Sajad; Godwin, Ian; Coelho, João; Nicolosi, Valeria; Lauth, Jannika; Kulkarni, Aditya; Kinge, Sachin; Siebbeles, Laurens D. A.; Duesberg, Georg S.; Coleman, Jonathan N.

2017-04-01

All-printed transistors consisting of interconnected networks of various types of two-dimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks. The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.

AP-Gate

ERIC Educational Resources Information Center

Whitman, Glenn

2003-01-01

In May 2001, students in the author's Advanced Placement (AP) United States History class were embroiled in a controversy surrounding the AP exam, in particular, having access to the exam's Document Based Question (DBQ) and free response portion prior to the test's administration. Prior to the exam, the College Board had provided a fifty-year time…

Exterior building details of Building A; east façade: profiled cement ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Exterior building details of Building A; east façade: profiled cement plaster door surround, black mesh gate protects a two-light transom atop non-original metal door; westerly view - San Quentin State Prison, Building 22, Point San Quentin, San Quentin, Marin County, CA

Time-gated ballistic imaging using a large aperture switching beam.

PubMed

Mathieu, Florian; Reddemann, Manuel A; Palmer, Johannes; Kneer, Reinhold

2014-03-24

Ballistic imaging commonly denotes the formation of line-of-sight shadowgraphs through turbid media by suppression of multiply scattered photons. The technique relies on a femtosecond laser acting as light source for the images and as switch for an optical Kerr gate that separates ballistic photons from multiply scattered ones. The achievable image resolution is one major limitation for the investigation of small objects. In this study, practical influences on the optical Kerr gate and image quality are discussed theoretically and experimentally applying a switching beam with large aperture (D = 19 mm). It is shown how switching pulse energy and synchronization of switching and imaging pulse in the Kerr cell influence the gate's transmission. Image quality of ballistic imaging and standard shadowgraphy is evaluated and compared, showing that the present ballistic imaging setup is advantageous for optical densities in the range of 8 < OD < 13. Owing to the spatial transmission characteristics of the optical Kerr gate, a rectangular aperture stop is formed, which leads to different resolution limits for vertical and horizontal structures in the object. Furthermore, it is reported how to convert the ballistic imaging setup into a schlieren-type system with an optical schlieren edge.

3D numerical simulation of flow field with incompletely flaring gate pier in large unit discharge and deep tail water project

NASA Astrophysics Data System (ADS)

Zhao, Zhou; Junxing, Wang

2018-06-01

Limited by large unit discharge above the overflow weir and deep tail water inside the stilling basin, the incoming flow inside stilling basin is seriously short of enough energy dissipation and outgoing flow still carries much energy with large velocity, bound to result in secondary hydraulic jump outside stilling basin and scour downstream river bed. Based on the RNG k-ɛ turbulence model and the VOF method, this paper comparatively studies flow field between the conventional flat gate pier program and the incompletely flaring gate pier program to reveal energy dissipation mechanism of incomplete flaring gate pier. Results show that incompletely flaring gate pier can greatly promote the longitudinally stretched water jet to laterally diffuse and collide in the upstream region of stilling basin due to velocity gradients between adjacent inflow from each chamber through shrinking partial overflow flow chamber weir chamber, which would lead to large scale vertical axis vortex from the bottom to the surface and enhance mutual shear turbulence dissipation. This would significantly increase energy dissipation inside stilling basin to reduce outgoing velocity and totally solve the common hydraulic problems in large unit discharge and deep tail water projects.

3D memory: etch is the new litho

NASA Astrophysics Data System (ADS)

Petti, Christopher

2018-03-01

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Characterization of the Vertical Structure of Tidal Currents in the Golden Gate (San Francisco) Inlet

DTIC Science & Technology

2012-12-01

depth of the deepest bin passing the ‘ lgb ’ criteria was compared with the nearest bathymetric data. Although, in most cases , the ‘ lgb ’ cutoffs are... CASE ...........................................................................30 1. LOW RANGE FLOOD...30 2. HIGH RANGE FLOOD ....................................................................32 B. EBB CURRENT CASE

Opportunity's Surroundings on Sol 1818 (Vertical)

NASA Technical Reports Server (NTRS)

2009-01-01

NASA's Mars Exploration Rover Opportunity used its navigation camera to take the images combined into this full-circle view of the rover's surroundings during the 1,818th Martian day, or sol, of Opportunity's surface mission (March 5, 2009). South is at the center; north at both ends.

This view is presented as a vertical projection with geometric seam correction. North is at the top.

The rover had driven 80.3 meters (263 feet) southward earlier on that sol. Tracks from the drive recede northward in this view.

The terrain in this portion of Mars' Meridiani Planum region includes dark-toned sand ripples and lighter-toned bedrock.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vedam, S.; Archambault, L.; Starkschall, G.

2007-11-15

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the deliverymore » gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation and delivery gate thresholds to within 0.3%. For patient data analysis, differences between simulation and delivery gate thresholds are reported as a fraction of the total respiratory motion range. For the smaller phase interval, the differences between simulation and delivery gate thresholds are 8{+-}11% and 14{+-}21% with and without audio-visual biofeedback, respectively, when the simulation gate threshold is determined based on the mean respiratory displacement within the 40%-60% gating phase interval. For the longer phase interval, corresponding differences are 4{+-}7% and 8{+-}15% with and without audio-visual biofeedback, respectively. Alternatively, when the simulation gate threshold is determined based on the maximum average respiratory displacement within the gating phase interval, greater differences between simulation and delivery gate thresholds are observed. A relationship between retrospective simulation gate threshold and prospective delivery gate threshold for respiratory gating is established and validated for regular and nonregular respiratory motion. Using this relationship, the delivery gate threshold can be reliably estimated at the time of 4D CT simulation, thereby improving the accuracy and efficiency of respiratory-gated radiation delivery.« less

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation.

PubMed

Vedam, S; Archambault, L; Starkschall, G; Mohan, R; Beddar, S

2007-11-01

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation and delivery gate thresholds to within 0.3%. For patient data analysis, differences between simulation and delivery gate thresholds are reported as a fraction of the total respiratory motion range. For the smaller phase interval, the differences between simulation and delivery gate thresholds are 8 +/- 11% and 14 +/- 21% with and without audio-visual biofeedback, respectively, when the simulation gate threshold is determined based on the mean respiratory displacement within the 40%-60% gating phase interval. For the longer phase interval, corresponding differences are 4 +/- 7% and 8 +/- 15% with and without audiovisual biofeedback, respectively. Alternatively, when the simulation gate threshold is determined based on the maximum average respiratory displacement within the gating phase interval, greater differences between simulation and delivery gate thresholds are observed. A relationship between retrospective simulation gate threshold and prospective delivery gate threshold for respiratory gating is established and validated for regular and nonregular respiratory motion. Using this relationship, the delivery gate threshold can be reliably estimated at the time of 4D CT simulation, thereby improving the accuracy and efficiency of respiratory-gated radiation delivery.

Edge states in gated bilayer-monolayer graphene ribbons and bilayer domain walls

NASA Astrophysics Data System (ADS)

Mirzakhani, M.; Zarenia, M.; Peeters, F. M.

2018-05-01

Using the effective continuum model, the electron energy spectrum of gated bilayer graphene with a step-like region of decoupled graphene layers at the edge of the sample is studied. Different types of coupled-decoupled interfaces are considered, i.e., zigzag (ZZ) and armchair junctions, which result in significant different propagating states. Two non-valley-polarized conducting edge states are observed for ZZ type, which are mainly located around the ZZ-ended graphene layers. Additionally, we investigated both BA-BA and BA-AB domain walls in the gated bilayer graphene within the continuum approximation. Unlike the BA-BA domain wall, which exhibits gapped insulating behaviour, the domain walls surrounded by different stackings of bilayer regions feature valley-polarized edge states. Our findings are consistent with other theoretical calculations, such as from the tight-binding model and first-principles calculations, and agree with experimental observations.

The isolated voltage sensing domain of the Shaker potassium channel forms a voltage-gated cation channel

PubMed Central

Zhao, Juan; Blunck, Rikard

2016-01-01

Domains in macromolecular complexes are often considered structurally and functionally conserved while energetically coupled to each other. In the modular voltage-gated ion channels the central ion-conducting pore is surrounded by four voltage sensing domains (VSDs). Here, the energetic coupling is mediated by interactions between the S4-S5 linker, covalently linking the domains, and the proximal C-terminus. In order to characterize the intrinsic gating of the voltage sensing domain in the absence of the pore domain, the Shaker Kv channel was truncated after the fourth transmembrane helix S4 (Shaker-iVSD). Shaker-iVSD showed significantly altered gating kinetics and formed a cation-selective ion channel with a strong preference for protons. Ion conduction in Shaker-iVSD developed despite identical primary sequence, indicating an allosteric influence of the pore domain. Shaker-iVSD also displays pronounced 'relaxation'. Closing of the pore correlates with entry into relaxation suggesting that the two processes are energetically related. DOI: http://dx.doi.org/10.7554/eLife.18130.001 PMID:27710769

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

PubMed

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

PubMed Central

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

2016-01-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells. PMID:27152356

Polarization entangled cluster state generation in a lithium niobate chip

NASA Astrophysics Data System (ADS)

Szep, Attila; Kim, Richard; Shin, Eunsung; Fanto, Michael L.; Osman, Joseph; Alsing, Paul M.

2016-10-01

We present a design of a quantum information processing C-phase (Controlled-phase) gate applicable for generating cluster states that has a form of integrated photonic circuits assembled with cascaded directional couplers on a Ti in-diffused Lithium Niobate (Ti-LN) platform where directional couplers as the integrated optical analogue of bulk beam splitters are used as fundamental building blocks. Based on experimentally optimized fabrication parameters of Ti-LN optical waveguides operating at an 810nm wavelength, an integrated Ti-LN quantum C-phase gate is designed and simulated. Our proposed C-phase gate consists of three tunable directional couplers cascaded together with having different weighted switching ratios for providing a tool of routing vertically- and horizontally-polarized photons independently. Its operation mechanism relies on selectively controlling the optical coupling of orthogonally polarized modes via the change in the index of refraction, and its operation is confirmed by the BPM simulation.

Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe{sub 2} heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Anyuan; Liu, Erfu; Long, Mingsheng

2016-05-30

We studied electrical transport properties including gate-tunable rectification inversion and polarity inversion, in atomically thin graphene/WSe{sub 2} heterojunctions. Such engrossing characteristics are attributed to the gate tunable mismatch of Fermi levels of graphene and WSe{sub 2}. Also, such atomically thin heterostructure shows excellent performances on photodetection. The responsivity of 66.2 mA W{sup −1} (without bias voltage) and 350 A W{sup −1} (with 1 V bias voltage) can be reached. What is more, the devices show great external quantum efficiency of 800%, high detectivity of 10{sup 13} cm Hz{sup 1/2}/W, and fast response time of 30 μs. Our study reveals that vertical stacking of 2D materials has great potentialmore » for multifunctional electronic and optoelectronic device applications in the future.« less

Scales of Free Convection around a Vertical Cylinder

ERIC Educational Resources Information Center

Lira, Ignacio

2008-01-01

The natural scales of the laminar steady-state free convection flow regime surrounding an isothermal vertical cylinder are established. It is shown that nondimensionalizing the momentum and energy equations in terms of the Rayleigh or Boussinesq numbers allows the use of the Prandtl number as a criterion to establish whether the motive buoyancy…

Visual exploration during locomotion limited by fear of heights.

PubMed

Kugler, Günter; Huppert, Doreen; Eckl, Maria; Schneider, Erich; Brandt, Thomas

2014-01-01

Visual exploration of the surroundings during locomotion at heights has not yet been investigated in subjects suffering from fear of heights. Eye and head movements were recorded separately in 16 subjects susceptible to fear of heights and in 16 non-susceptible controls while walking on an emergency escape balcony 20 meters above ground level. Participants wore mobile infrared eye-tracking goggles with a head-fixed scene camera and integrated 6-degrees-of-freedom inertial sensors for recording head movements. Video recordings of the subjects were simultaneously made to correlate gaze and gait behavior. Susceptibles exhibited a limited visual exploration of the surroundings, particularly the depth. Head movements were significantly reduced in all three planes (yaw, pitch, and roll) with less vertical head oscillations, whereas total eye movements (saccade amplitudes, frequencies, fixation durations) did not differ from those of controls. However, there was an anisotropy, with a preference for the vertical as opposed to the horizontal direction of saccades. Comparison of eye and head movement histograms and the resulting gaze-in-space revealed a smaller total area of visual exploration, which was mainly directed straight ahead and covered vertically an area from the horizon to the ground in front of the feet. This gaze behavior was associated with a slow, cautious gait. The visual exploration of the surroundings by susceptibles to fear of heights differs during locomotion at heights from the earlier investigated behavior of standing still and looking from a balcony. During locomotion, anisotropy of gaze-in-space shows a preference for the vertical as opposed to the horizontal direction during stance. Avoiding looking into the abyss may reduce anxiety in both conditions; exploration of the "vertical strip" in the heading direction is beneficial for visual control of balance and avoidance of obstacles during locomotion.

Single-channel kinetics of BK (Slo1) channels

PubMed Central

Geng, Yanyan; Magleby, Karl L.

2014-01-01

Single-channel kinetics has proven a powerful tool to reveal information about the gating mechanisms that control the opening and closing of ion channels. This introductory review focuses on the gating of large conductance Ca2+- and voltage-activated K+ (BK or Slo1) channels at the single-channel level. It starts with single-channel current records and progresses to presentation and analysis of single-channel data and the development of gating mechanisms in terms of discrete state Markov (DSM) models. The DSM models are formulated in terms of the tetrameric modular structure of BK channels, consisting of a central transmembrane pore-gate domain (PGD) attached to four surrounding transmembrane voltage sensing domains (VSD) and a large intracellular cytosolic domain (CTD), also referred to as the gating ring. The modular structure and data analysis shows that the Ca2+ and voltage dependent gating considered separately can each be approximated by 10-state two-tiered models with five closed states on the upper tier and five open states on the lower tier. The modular structure and joint Ca2+ and voltage dependent gating are consistent with a 50 state two-tiered model with 25 closed states on the upper tier and 25 open states on the lower tier. Adding an additional tier of brief closed (flicker states) to the 10-state or 50-state models improved the description of the gating. For fixed experimental conditions a channel would gate in only a subset of the potential number of states. The detected number of states and the correlations between adjacent interval durations are consistent with the tiered models. The examined models can account for the single-channel kinetics and the bursting behavior of gating. Ca2+ and voltage activate BK channels by predominantly increasing the effective opening rate of the channel with a smaller decrease in the effective closing rate. Ca2+ and depolarization thus activate by mainly destabilizing the closed states. PMID:25653620

Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

PubMed

Sun, Min-Chul; Kim, Garam; Kim, Sang Wan; Kim, Hyun Woo; Kim, Hyungjin; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook

2012-07-01

In order to extend the conventional low power Si CMOS technology beyond the 20-nm node without SOI substrates, we propose a novel co-integration scheme to build horizontal- and vertical-channel MOSFETs together and verify the idea using TCAD simulations. From the fabrication viewpoint, it is highlighted that this scheme provides additional vertical devices with good scalability by adding a few steps to the conventional CMOS process flow for fin formation. In addition, the benefits of the co-integrated vertical devices are investigated using a TCAD device simulation. From this study, it is confirmed that the vertical device shows improved off-current control and a larger drive current when the body dimension is less than 20 nm, due to the electric field coupling effect at the double-gated channel. Finally, the benefits from the circuit design viewpoint, such as the larger midpoint gain and beta and lower power consumption, are confirmed by the mixed-mode circuit simulation study.

Graphene and PbS quantum dot hybrid vertical phototransistor

NASA Astrophysics Data System (ADS)

Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

2017-04-01

A field-effect phototransistor based on a graphene and lead sulfide quantum dot (PbS QD) hybrid in which PbS QDs are embedded in a graphene matrix has been fabricated with a vertical architecture through a solution process. The n-type Si/SiO2 substrate (gate), Au/Ag nanowire transparent source electrode, active layer and Au drain electrode are vertically stacked in the device, which has a downscaled channel length of 250 nm. Photoinduced electrons in the PbS QDs leap into the conduction band and fill in the trap states, while the photoinduced holes left in the valence band transfer to the graphene and form the photocurrent under biases from which the photoconductive gain is evaluated. The graphene/QD-based vertical phototransistor shows a photoresponsivity of 2 × 103 A W-1, and specific detectivity up to 7 × 1012 Jones under 808 nm laser illumination with a light irradiance of 12 mW cm-2. The solution-processed vertical phototransistor provides a new facile method for optoelectronic device applications.

Implementing biological logic gates using gold nanoparticles conjugated to fluorophores

NASA Astrophysics Data System (ADS)

Barnoy, Eran A.; Popovtzer, Rachela; Fixler, Dror

2018-02-01

We describe recent research in which we explored biologically relevant logic gates using gold nanoparticles (GNPs) conjugated to fluorophores and tracing the results remotely by time-domain fluorescence lifetime imaging microscopy (FLIM). GNPs have a well-known effect on nearby fluorophores in terms of their fluorescence intensity (FI - increase or decrease) as well as fluorescence lifetime (FLT). We have designed a few bio-switch systems in which the FLIMdetected fluorescence varies after biologically relevant stimulation. Some of our tools include fluorescein diacetate (FDA) which can be activated by either esterases or pH, peptide chains cleavable by caspase 3, and the polymer polyacrylic acid which varies in size based on surrounding pH. After conjugating GNPs to chosen fluorophores, we have successfully demonstrated the logic gates of NOT, AND, OR, NAND, NOR, and XOR by imaging different stages of activation. These logic gates have been demonstrated both in solutions as well as within cultured cells, thereby possibly opening the door for nanoparticulate in vivo smart detection. While these initial probes are mainly tools for intelligent detection systems, they lay the foundation for logic gates functioning in conjunction so as to lead to a form of in vivo biological computing, where the system would be able to release proper treatment options in specific situations without external influence.

Effect of Residence Time on Net Nitrate Retention in Flow-Regulated Backwaters of the Upper Mississippi River

DTIC Science & Technology

2006-02-01

include Ceratophyllum demersum, Myriophyllum spicatum, and Nymphaea odorata . METHODS: In late April 2004, vertical slide gates were adjusted to...due to a shallow water column and dense N. odorata beds. Flows into Schmokers Lake could not be directly measured because it was not connected to the

Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

DOE PAGES

Léonard, François; Spataru, Catalin D.; Goldflam, Michael; ...

2017-04-04

The holy grail of photodetector technology is dynamic wavelength tunability. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. We employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We also reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at themore » contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. Furthermore, we show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.« less

Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Léonard, François; Spataru, Catalin D.; Goldflam, Michael

The holy grail of photodetector technology is dynamic wavelength tunability. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. We employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We also reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at themore » contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. Furthermore, we show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.« less

Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts.

PubMed

Zhang, Jin; Zhang, Kenan; Xia, Bingyu; Wei, Yang; Li, Dongqi; Zhang, Ke; Zhang, Zhixing; Wu, Yang; Liu, Peng; Duan, Xidong; Xu, Yong; Duan, Wenhui; Fan, Shoushan; Jiang, Kaili

2017-10-01

Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon-nanotube-confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single-walled carbon nanotube (SWCNT) and a metal electrode. By using WSe 2 and MoS 2 , the CCVH can be made into p-type and n-type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe 2 CCVH from unipolar to bipolar, and the transition of WSe 2 /MoS 2 from p-n junction to n-n junction under proper source-drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano-optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vertical dielectric screening of few-layer van der Waals semiconductors.

PubMed

Koo, Jahyun; Gao, Shiyuan; Lee, Hoonkyung; Yang, Li

2017-10-05

Vertical dielectric screening is a fundamental parameter of few-layer van der Waals two-dimensional (2D) semiconductors. However, unlike the widely-accepted wisdom claiming that the vertical dielectric screening is sensitive to the thickness, our first-principles calculation based on the linear response theory (within the weak field limit) reveals that this screening is independent of the thickness and, in fact, it is the same as the corresponding bulk value. This conclusion is verified in a wide range of 2D paraelectric semiconductors, covering narrow-gap ones and wide-gap ones with different crystal symmetries, providing an efficient and reliable way to calculate and predict static dielectric screening of reduced-dimensional materials. Employing this conclusion, we satisfactorily explain the tunable band gap in gated 2D semiconductors. We further propose to engineer the vertical dielectric screening by changing the interlayer distance via vertical pressure or hybrid structures. Our predicted vertical dielectric screening can substantially simplify the understanding of a wide range of measurements and it is crucial for designing 2D functional devices.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

PubMed

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-12-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N + pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g  = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

NASA Astrophysics Data System (ADS)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Yang, Zhaonian

2017-03-01

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the electric field and tunneling rate at the top of tunneling junctions. Moreover, using SiGe in the pocket regions leads to the smaller tunneling distance. Therefore, the proposed HTG-TFET can obtain the higher on-state current. The simulation results show that on-state current of HTG-TFET is increased by one order of magnitude compared with that of the silicon-based counterparts. The average subthreshold swing (SS) of HTG-TFET is 44.64 mV/dec when V g is varied from 0.1 to 0.4 V, and the point SS is 36.59 mV/dec at V g = 0.2 V. Besides, this design cannot bring the sever Miller capacitance for the TFET circuit design. By using the T-shaped gate and SiGe pocket regions, the overall performance of the TFET is optimized.

Streamflow and water-quality conditions including geologic sources and processes affecting selenium loading in the Toll Gate Creek watershed, Aurora, Arapahoe County, Colorado, 2007

USGS Publications Warehouse

Paschke, Suzanne S.; Runkel, Robert L.; Walton-Day, Katherine; Kimball, Briant A.; Schaffrath, Keelin R.

2013-01-01

Toll Gate Creek is a perennial stream draining a suburban area in Aurora, Colorado, where selenium concentrations have consistently exceeded the State of Colorado aquatic-life standard for selenium of 4.6 micrograms per liter since the early 2000s. In cooperation with the City of Aurora, Colorado, Utilities Department, a synoptic water-quality study was performed along an 18-kilometer reach of Toll Gate Creek extending from downstream from Quincy Reservoir to the confluence with Sand Creek to develop a detailed understanding of streamflow and concentrations and loads of selenium in Toll Gate Creek. Streamflow and surface-water quality were characterized for summer low-flow conditions (July–August 2007) using four spatially overlapping synoptic-sampling subreaches. Mass-balance methods were applied to the synoptic-sampling and tracer-injection results to estimate streamflow and develop spatial profiles of concentration and load for selenium and other chemical constituents in Toll Gate Creek surface water. Concurrent groundwater sampling determined concentrations of selenium and other chemical constituents in groundwater in areas surrounding the Toll Gate Creek study reaches. Multivariate principal-component analysis was used to group samples and to suggest common sources for dissolved selenium and major ions. Hydrogen and oxygen stable-isotope ratios, groundwater-age interpretations, and chemical analysis of water-soluble paste extractions from core samples are presented, and interpretation of the hydrologic and geochemical data support conclusions regarding geologic sources of selenium and the processes affecting selenium loading in the Toll Gate Creek watershed.

Opportunity's Surroundings on Sol 1798 (Vertical)

NASA Technical Reports Server (NTRS)

2009-01-01

NASA's Mars Exploration Rover Opportunity used its navigation camera to take the images combined into this 180-degree view of the rover's surroundings during the 1,798th Martian day, or sol, of Opportunity's surface mission (Feb. 13, 2009). North is on top.

This view is presented as a vertical projection with geometric seam correction.

The rover had driven 111 meters (364 feet) southward on the preceding sol. Tracks from that drive recede northward in this view. For scale, the distance between the parallel wheel tracks is about 1 meter (about 40 inches).

The terrain in this portion of Mars' Meridiani Planum region includes dark-toned sand ripples and lighter-toned bedrock.

Opportunity's Surroundings on Sol 1687 (Vertical)

NASA Technical Reports Server (NTRS)

2009-01-01

NASA's Mars Exploration Rover Opportunity used its navigation camera to take the images combined into this 360-degree view of the rover's surroundings on the 1,687th Martian day, or sol, of its surface mission (Oct. 22, 2008).

Opportunity had driven 133 meters (436 feet) that sol, crossing sand ripples up to about 10 centimeters (4 inches) tall. The tracks visible in the foreground are in the east-northeast direction.

Opportunity's position on Sol 1687 was about 300 meters southwest of Victoria Crater. The rover was beginning a long trek toward a much larger crater, Endeavour, about 12 kilometers (7 miles) to the southeast.

This view is presented as a vertical projection with geometric seam correction.

Electrorefiner

DOEpatents

Miller, W.E.; Tomczuk, Z.

1995-08-22

An apparatus is disclosed capable of functioning as a solid cathode and for removing crystalline structure from the upper surface of a liquid cathode, includes a metallic support vertically disposed with respect to an electrically insulating container capable of holding a liquid metal cathode. A piston of electrically insulating material mounted on the drive tube, surrounding the current lead, for vertical and rotational movement with respect thereto including a downwardly extending collar portion surrounding the metallic current lead. At least one portion of the piston remote from the metallic current lead being removed. Mechanism for lowering the piston to the surface of the liquid cathode and raising the piston from the surface along with mechanism for rotating the piston around its longitudinal axis. 5 figs.

Electrorefiner

DOEpatents

Miller, William E.; Tomczuk, Zygmunt

1995-01-01

An apparatus capable of functioning as a solid cathode and for removing crystalline structure from the upper surface of a liquid cathode, includes a metallic support vertically disposed with respect to an electrically insulating container capable of holding a liquid metal cathode. A piston of electrically insulating material mounted on the drive tube, surrounding the current lead, for vertical and rotational movement with respect thereto including a downwardly extending collar portion surrounding the metallic current lead. At least one portion of the piston remote from the metallic current lead being removed. Mechanism for lowering the piston to the surface of the liquid cathode and raising the piston from the surface along with mechanism for rotating the piston around its longitudinal axis.

Effects of Geometrical and Flow Rates on the Prediction of Bottom Pressure Coefficients of Tunnel Lift Gate of Dams

NASA Astrophysics Data System (ADS)

Ameen, Sheeraz; Taher, Taha; Ahmed, Thamir M.

2018-06-01

Hydrostatics and hydrodynamics forces are generated and applied on the vertical lift tunnel gates due to the influence of a wide range of dam operating conditions. One of the most important forces is the uplift force resulting from the jet flow issuing below the gate. This force is based mainly upon many hydraulic and geometrical parameters. In this work, the uplift force is studied in terms of bottom pressure coefficient. The investigation is made paying particular attention on the effects of various three discharges and three gate lip angles on values of bottom pressure coefficients in addition to four different tunnel longitudinal slopes whose impact has not been studied in many previous works. Hydraulic model is constructed in this work for the sake of measuring all parameters required for estimating the bottom pressure coefficients, which are all examined against gate openings. The results show that the bottom pressure coefficient is related to the said variables, however, its behaviour and values are not necessary regular with variance of studied variables. The values are seen more significantly related to the flow rates and for some extent to the slopes of tunnel. An attempt by using the nonlinear regression of Statistical package of social sciences (SPSS) is made to set equations relating bottom pressure coefficient with gate openings for several angles of gate lips. The obtained equations are shown in good agreement with the selected cases of experimental results. The results are applicable for design purposes for similar geometrical and flow parameters considered in this study.

A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

NASA Astrophysics Data System (ADS)

Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

2009-05-01

Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

Opening Gates: On Celebrating Creative Commons and Flexing the Fair Use Muscle

ERIC Educational Resources Information Center

Valenza, Joyce Kasman

2011-01-01

The landscape surrounding the use of intellectual property has shifted dramatically over the past couple of years. Teacher librarians, responsible for guiding learners of all ages toward practicing digital citizenship, should be aware of the new rules for playing, living, and working in a new intellectual property sandbox. In the past, librarians…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lovell, Jack, E-mail: jack.lovell@durham.ac.uk; Culham Centre for Fusion Energy, Culham Science Centre, Abingdon, Oxon OX14 3DB; Naylor, Graham

A new resistive bolometer system has been developed for MAST-Upgrade. It will measure radiated power in the new Super-X divertor, with millisecond time resolution, along 16 vertical and 16 horizontal lines of sight. The system uses a Xilinx Zynq-7000 series Field-Programmable Gate Array (FPGA) in the D-TACQ ACQ2106 carrier to perform real time data acquisition and signal processing. The FPGA enables AC-synchronous detection using high performance digital filtering to achieve a high signal-to-noise ratio and will be able to output processed data in real time with millisecond latency. The system has been installed on 8 previously unused channels of themore » JET vertical bolometer system. Initial results suggest good agreement with data from existing vertical channels but with higher bandwidth and signal-to-noise ratio.« less

On the design of GaN vertical MESFETs on commercial LED sapphire wafers

NASA Astrophysics Data System (ADS)

Atalla, Mahmoud R. M.; Noor Elahi, Asim M.; Mo, Chen; Jiang, Zhenyu; Liu, Jie; Ashok, S.; Xu, Jian

2016-12-01

Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.

PubMed

Kang, Jeongmin; Moon, Taeho; Jeon, Youngin; Kim, Hoyoung; Kim, Sangsig

2013-05-01

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I(ON)/I(OFF) of > 10(6), with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of -93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

77 FR 2290 - Modern Hydro; Notice of Preliminary Permit Application Accepted for Filing and Soliciting...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-17

... proposed Delhi Milldam Water Power Project No. 14311 to be located at the existing Delhi Dam, on the south... three 25-foot- wide vertical sluice gates; (4) two refurbished 2,400-volt Westinghouse generator units powered by two refurbished S. Morgan Smith turbines with a combined generating capacity of 1,500 kilowatts...

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Lin, Ming-Wei; Lin, Junhao

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE PAGES

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; ...

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Vertical coherence of deformation in lithosphere in the eastern Himalayan syntaxis using GPS, Quaternary fault slip rates, and shear wave splitting data

NASA Astrophysics Data System (ADS)

Chang, Lijun; Flesch, Lucy M.; Wang, Chun-Yung; Ding, Zhifeng

2015-07-01

We present 59 new SKS/SKKS and combine them with 69 previously published data to infer the mantle deformation field in SE Tibet. The dense set of anisotropy measurements in the eastern Himalayan syntaxis (EHS) are oriented along a NE-SW azimuth and rotate clockwise in the surround regions. We use GPS measurements and geologic data to determine a continuous surface deformation field that is then used to predict shear wave spitting directions at each station. Comparison of splitting observations with predictions yields an average misfit of 11.7° illustrating that deformation is vertically coherent, consistent with previous studies. Within the central EHS in areas directly surrounding the Namche-Barwa metamorphic massif, the average misfit of 11 stations increases to 60.8°, and vertical coherence is no longer present. The complexity of the mantle anisotropy and surface observations argues for local alteration of the strain fields here associated with recent rapid exhumation of the Indian crust.

Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability.

PubMed

Kwon, Jimin; Takeda, Yasunori; Fukuda, Kenjiro; Cho, Kilwon; Tokito, Shizuo; Jung, Sungjune

2016-11-22

In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Shu; Zhou, Chunhua; Jiang, Qimeng

2014-01-06

Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ΔE{sub T1} ∼ 0.54 eV, ΔE{sub T2} ∼ 0.65 eV, and ΔE{sub T3} ∼ 0.75 eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, itmore » is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel.« less

Improving subthreshold swing to thermionic emission limit in carbon nanotube network film-based field-effect

NASA Astrophysics Data System (ADS)

Zhao, Chenyi; Zhong, Donglai; Qiu, Chenguang; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

2018-01-01

In this letter, we explore the vertical scaling-down behavior of carbon nanotube (CNT) network film field-effect transistors (FETs) and show that by using a high-efficiency gate insulator, we can substantially improve the subthreshold swing (SS) and its uniformity. By using an HfO2 layer with a thickness of 7.3 nm as the gate insulator, we fabricated CNT network film FETs with a long channel (>2 μm) that exhibit an SS of approximately 60 mV/dec. The preferred thickness of HfO2 as the gate insulator in a CNT network FET is between 7 nm and 10 nm, simultaneously yielding an excellent SS (<80 mV/decade) and low gate leakage. However, because of the statistical fluctuations of the network CNT channel, the lateral scaling of CNT network film-based FETs is more difficult than that of conventional FETs. Experiments suggest that excellent SS is difficult to achieve statistically in CNT network film FETs with a small channel length (smaller than the mean length of the CNTs), which eventually limits the further scaling down of this kind of CNT FET to the sub-micrometer regime.

Motion direction estimation based on active RFID with changing environment

NASA Astrophysics Data System (ADS)

Jie, Wu; Minghua, Zhu; Wei, He

2018-05-01

The gate system is used to estimate the direction of RFID tags carriers when they are going through the gate. Normally, it is difficult to achieve and keep a high accuracy in estimating motion direction of RFID tags because the received signal strength of tag changes sharply according to the changing electromagnetic environment. In this paper, a method of motion direction estimation for RFID tags is presented. To improve estimation accuracy, the machine leaning algorithm is used to get the fitting function of the received data by readers which are deployed inside and outside gate respectively. Then the fitted data are sampled to get the standard vector. We compare the stand vector with template vectors to get the motion direction estimation result. Then the corresponding template vector is updated according to the surrounding environment. We conducted the simulation and implement of the proposed method and the result shows that the proposed method in this work can improve and keep a high accuracy under the condition of the constantly changing environment.

Central solar-energy receiver

DOEpatents

Not Available

1981-10-27

An improved tower-mounted central solar energy receiver for heating air drawn through the receiver by an induced draft fan is described. A number of vertically oriented, energy absorbing, fin-shaped slats are radially arranged in a number of concentric cylindrical arrays on top of the tower coaxially surrounding a pipe having air holes through which the fan draws air which is heated by the slats which receive the solar radiation from a heliostat field. A number of vertically oriented and wedge-shaped columns are radially arranged in a number of concentric cylindrical clusters surrounding the slat arrays. The columns have two mirror-reflecting sides to reflect radiation into the slat arrays and one energy absorbing side to reduce reradiation and reflection from the slat arrays.

Central solar energy receiver

DOEpatents

Drost, M. Kevin

1983-01-01

An improved tower-mounted central solar energy receiver for heating air drawn through the receiver by an induced draft fan. A number of vertically oriented, energy absorbing, fin-shaped slats are radially arranged in a number of concentric cylindrical arrays on top of the tower coaxially surrounding a pipe having air holes through which the fan draws air which is heated by the slats which receive the solar radiation from a heliostat field. A number of vertically oriented and wedge-shaped columns are radially arranged in a number of concentric cylindrical clusters surrounding the slat arrays. The columns have two mirror-reflecting sides to reflect radiation into the slat arrays and one energy absorbing side to reduce reradiation and reflection from the slat arrays.

Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors.

PubMed

Wensorra, J; Lepsa, M I; Trellenkamp, S; Moers, J; Indlekofer, K M; Lüth, H

2009-11-18

Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment accuracy of below 10 nm has been achieved and the all-around metal gate at the level of the DBQW structure has been positioned at a distance of about 20 nm relative to the semiconductor nanocolumn. Due to the specific doping profile n++/i/n++ along the transistor nanocolumn, a particular confining potential is established for devices with diameters smaller than 70 nm, which causes a collimation effect of the propagating electrons. Under these conditions, room temperature optimum performance of the nano-RTTs is achieved with peak-to-valley current ratios above 2 and a peak current swing factor of about 6 for gate voltages between -6 and +6 V. These values indicate that our nano-RTTs can be successfully used in low power fast nanoelectronic circuits.

First-principles simulations of Graphene/Transition-metal-Dichalcogenides/Graphene Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Li, Xiangguo; Wang, Yun-Peng; Zhang, X.-G.; Cheng, Hai-Ping

A prototype field-effect transistor (FET) with fascinating properties can be made by assembling graphene and two-dimensional insulating crystals into three-dimensional stacks with atomic layer precision. Transition metal dichalcogenides (TMDCs) such as WS2, MoS2 are good candidates for the atomically thin barrier between two layers of graphene in the vertical FET due to their sizable bandgaps. We investigate the electronic properties of the Graphene/TMDCs/Graphene sandwich structure using first-principles method. We find that the effective tunnel barrier height of the TMDC layers in contact with the graphene electrodes has a layer dependence and can be modulated by a gate voltage. Consequently a very high ON/OFF ratio can be achieved with appropriate number of TMDC layers and a suitable range of the gate voltage. The spin-orbit coupling in TMDC layers is also layer dependent but unaffected by the gate voltage. These properties can be important in future nanoelectronic device designs. DOE/BES-DE-FG02-02ER45995; NERSC.

Water and climate

NASA Technical Reports Server (NTRS)

Randall, David A.

1994-01-01

The vertical profiles and temperature and moisture in convective regimes were investigated, using moist available energy as a guide. The generalized convective available potential energy observed during the Global Atmosphere Research Program's Atlantic Tropical Experiment (GATE) phase 3 was analyzed. Ice effects were included. The results have been used to develop an improved cumulus parameterization. Several reprints from the Journal of Atmospheric Sciences are appended.

An FPGA-based bolometer for the MAST-U Super-X divertor.

PubMed

Lovell, Jack; Naylor, Graham; Field, Anthony; Drewelow, Peter; Sharples, Ray

2016-11-01

A new resistive bolometer system has been developed for MAST-Upgrade. It will measure radiated power in the new Super-X divertor, with millisecond time resolution, along 16 vertical and 16 horizontal lines of sight. The system uses a Xilinx Zynq-7000 series Field-Programmable Gate Array (FPGA) in the D-TACQ ACQ2106 carrier to perform real time data acquisition and signal processing. The FPGA enables AC-synchronous detection using high performance digital filtering to achieve a high signal-to-noise ratio and will be able to output processed data in real time with millisecond latency. The system has been installed on 8 previously unused channels of the JET vertical bolometer system. Initial results suggest good agreement with data from existing vertical channels but with higher bandwidth and signal-to-noise ratio.

Impact of remanent magnetic field on the heat load of original CEBAF cryomodule

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciovati, Gianluigi; Cheng, Guangfeng; Drury, Michael

The heat load of the original cryomodules for the CEBAF accelerator is ~50% higher than the target value of 100 W at 2.07 K for refurbished cavities operating at an accelerating gradient of 12.5 MV/m. This issue is due to the quality factor of the cavities being ~50% lower in the cryomodule than when tested in a vertical cryostat, even at low RF field. Previous studies were not conclusive about the origin of the additional losses. We present the results of a systematic study of the additional losses in a five-cell cavity from a decommissioned cryomodule after attaching components, whichmore » are part of the cryomodule, such as the cold tuner, the He tank and the cold magnetic shield, prior to cryogenic testing in a vertical cryostat. Flux-gate magnetometers and temperature sensors are used as diagnostic elements. Different cool-down procedures and tests in different residual magnetic fields were investigated during the study. Here, three flux-gate magnetometers attached to one of the cavities installed in the refurbished cryomodule C50-12 confirmed the hypothesis of high residual magnetic field as a major cause for the increased RF losses.« less

Impact of remanent magnetic field on the heat load of original CEBAF cryomodule

DOE PAGES

Ciovati, Gianluigi; Cheng, Guangfeng; Drury, Michael; ...

2016-11-22

The heat load of the original cryomodules for the CEBAF accelerator is ~50% higher than the target value of 100 W at 2.07 K for refurbished cavities operating at an accelerating gradient of 12.5 MV/m. This issue is due to the quality factor of the cavities being ~50% lower in the cryomodule than when tested in a vertical cryostat, even at low RF field. Previous studies were not conclusive about the origin of the additional losses. We present the results of a systematic study of the additional losses in a five-cell cavity from a decommissioned cryomodule after attaching components, whichmore » are part of the cryomodule, such as the cold tuner, the He tank and the cold magnetic shield, prior to cryogenic testing in a vertical cryostat. Flux-gate magnetometers and temperature sensors are used as diagnostic elements. Different cool-down procedures and tests in different residual magnetic fields were investigated during the study. Here, three flux-gate magnetometers attached to one of the cavities installed in the refurbished cryomodule C50-12 confirmed the hypothesis of high residual magnetic field as a major cause for the increased RF losses.« less

An LOD with improved breakdown voltage in full-frame CCD devices

NASA Astrophysics Data System (ADS)

Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

2005-02-01

In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

Computational study of graphene-based vertical field effect transistor

NASA Astrophysics Data System (ADS)

Chen, Wenchao; Rinzler, Andrew; Guo, Jing

2013-03-01

Poisson and drift-diffusion equations are solved in a three-dimensional device structure to simulate graphene-based vertical field effect transistors (GVFETs). Operation mechanisms of the GVFET with and without punched holes in the graphene source contact are presented and compared. The graphene-channel Schottky barrier can be modulated by gate electric field due to graphene's low density of states. For the graphene contact with punched holes, the contact barrier thinning and lowering around punched hole edge allow orders of magnitude higher tunneling current compared to the region away from the punched hole edge, which is responsible for significant performance improvement as already verified by experiments. Small hole size is preferred due to less electrostatic screening from channel inversion layer, which gives large electric field around the punched hole edge, thus, leading to a thinner and lower barrier. Bilayer and trilayer graphenes as the source contact degrade the performance improvement because stronger electrostatic screening leads to smaller contact barrier lowering and thinning. High punched hole area percentage improves current performance by allowing more gate electric field to modulate the graphene-channel barrier. Low effective mass channel material gives better on-off current ratio.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

PubMed

Miao, Jinshui; Hu, Weida; Guo, Nan; Lu, Zhenyu; Liu, Xingqiang; Liao, Lei; Chen, Pingping; Jiang, Tao; Wu, Shiwei; Ho, Johnny C; Wang, Lin; Chen, Xiaoshuang; Lu, Wei

2015-02-25

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly flexible electronics from scalable vertical thin film transistors.

PubMed

Liu, Yuan; Zhou, Hailong; Cheng, Rui; Yu, Woojong; Huang, Yu; Duan, Xiangfeng

2014-03-12

Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.

Magnetosensitive neurons mediate geomagnetic orientation in Caenorhabditis elegans

PubMed Central

Vidal-Gadea, Andrés; Ward, Kristi; Beron, Celia; Ghorashian, Navid; Gokce, Sertan; Russell, Joshua; Truong, Nicholas; Parikh, Adhishri; Gadea, Otilia; Ben-Yakar, Adela; Pierce-Shimomura, Jonathan

2015-01-01

Many organisms spanning from bacteria to mammals orient to the earth's magnetic field. For a few animals, central neurons responsive to earth-strength magnetic fields have been identified; however, magnetosensory neurons have yet to be identified in any animal. We show that the nematode Caenorhabditis elegans orients to the earth's magnetic field during vertical burrowing migrations. Well-fed worms migrated up, while starved worms migrated down. Populations isolated from around the world, migrated at angles to the magnetic vector that would optimize vertical translation in their native soil, with northern- and southern-hemisphere worms displaying opposite migratory preferences. Magnetic orientation and vertical migrations required the TAX-4 cyclic nucleotide-gated ion channel in the AFD sensory neuron pair. Calcium imaging showed that these neurons respond to magnetic fields even without synaptic input. C. elegans may have adapted magnetic orientation to simplify their vertical burrowing migration by reducing the orientation task from three dimensions to one. DOI: http://dx.doi.org/10.7554/eLife.07493.001 PMID:26083711

Development and fabrication of low ON resistance high current vertical VMOS power FETs

NASA Technical Reports Server (NTRS)

Kay, S.

1979-01-01

The design of a VMOS Power FET exhibiting low ON resistance, high current as well as high breakdown voltage and fast switching speeds is described. The design which is based on a 1st-order device model, features a novel polysilicon-gate structure and fieldplated groove termination to achieve high packing density and high breakdown voltage, respectively. One test chip, named VNTKI, can block 180 V at an ON resistence of 2.5 ohm. A 150 mil x 200 mil (.19 sq cm) experimental chip has demonstrated a breakdown voltage of 200v, an ON resistance of 0.12 ohm, a switching time of less than 100 ns, and a pulse drain - current of 50 A with 10 V gate drive.

Single-qubit unitary gates by graph scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumer, Benjamin A.; Underwood, Michael S.; Feder, David L.

2011-12-15

We consider the effects of plane-wave states scattering off finite graphs as an approach to implementing single-qubit unitary operations within the continuous-time quantum walk framework of universal quantum computation. Four semi-infinite tails are attached at arbitrary points of a given graph, representing the input and output registers of a single qubit. For a range of momentum eigenstates, we enumerate all of the graphs with up to n=9 vertices for which the scattering implements a single-qubit gate. As n increases, the number of new unitary operations increases exponentially, and for n>6 the majority correspond to rotations about axes distributed roughly uniformlymore » across the Bloch sphere. Rotations by both rational and irrational multiples of {pi} are found.« less

Methods to quantify seepage beneath Levee 30, Miami-Dade County, Florida

USGS Publications Warehouse

Sonenshein, R.S.

2001-01-01

A two-dimensional, cross-sectional, finite-difference, ground-water flow model and a simple application of Darcy?s law were used to quantify ground-water flow (from a wetlands) beneath Levee 30 in Miami-Dade County, Florida. Geologic and geophysical data, vertical seepage data from the wetlands, canal discharge data, ground-water-level data, and surface-water-stage data collected during 1995 and 1996 were used as boundary conditions and calibration data for the ground-water flow model and as input for the analytical model. Vertical seepage data indicated that water from the wetlands infiltrated the subsurface, near Levee 30, at rates ranging from 0.033 to 0.266 foot per day when the gates at the control structures along Levee 30 canal were closed. During the same period, stage differences between the wetlands (Water Conservation Area 3B) and Levee 30 canal ranged from 0.11 to 1.27 feet. A layer of low-permeability limestone, located 7 to 10 feet below land surface, restricts vertical flow between the surface water in the wetlands and the ground water. Based on measured water-level data, ground-water flow appears to be generally horizontal, except in the direct vicinity of the canal. The increase in discharge rate along a 2-mile reach of the Levee 30 canal ranged from 9 to 30 cubic feet per second per mile and can be attributed primarily to ground-water inflow. Flow rates in Levee 30 canal were greatest when the gates at the control structures were open. The ground-water flow model data were compared with the measured ground-water heads and vertical seepage from the wetlands. Estimating the horizontal ground-water flow rate beneath Levee 30 was difficult owing to the uncertainty in the horizontal hydraulic conductivity of the main flow zone of the Biscayne aquifer. Measurements of ground-water flows into Levee 30 canal, a substantial component of the water budget, were also uncertain, which lessened the ability to validate the model results. Because of vertical flows near Levee 30 canal and a very low hydraulic gradient east of the canal, a simplified Darcian approach simulated with the ground-water flow model does not accurately estimate the horizontal ground-water flow rate. Horizontal ground-water flow rates simulated with the ground-water flow model (for a 60-foot-deep by 1-foot-wide section of the Biscayne aquifer) ranged from 150 to 450 cubic feet per day west of Levee 30 and from 15 to 170 cubic feet per day east of Levee 30 canal. Vertical seepage from the wetlands, within 500 feet of Levee 30, generally accounted for 10 to 15 percent of the total horizontal flow beneath the levee. Simulated horizontal ground-water flow was highest during the wet season and when the gates at the control structures were open.

Method for distance determination using range-gated imaging suitable for an arbitrary pulse shape

NASA Astrophysics Data System (ADS)

Kabashnikov, Vitaly; Kuntsevich, Boris

2017-10-01

A method for distance determination with the help of range-gated viewing systems suitable for the arbitrary shape of the illumination pulse is proposed. The method is based on finding the delay time at which maximum of the return pulse energy takes place. The maximum position depends on the pulse and gate durations and, generally speaking, on the pulse shape. If the pulse length is less than or equal to the gate duration, the delay time appropriate to the maximum does not depend on the pulse shape. At equal pulse and gate durations, there is a strict local maximum, which turns into a plateau when pulse is shorter than gate duration. A delay time appropriate to the strict local maximum or the far boundary of the plateau (where non-strict maximum is) is directly related to the distance to the object. These findings are confirmed by analytical relationships for trapezoid pulses and numerical results for the real pulse shape. To verify the proposed method we used a vertical wall located at different distances from 15 to 120m as an observed object. Delay time was changing discretely in increments of 5 ns. Maximum of the signal was determined by visual observation of the object on the monitor screen. The distance defined by the proposed method coincided with the direct measurement with accuracy 1- 2m, which is comparable with the delay time step multiplied by half of the light velocity. The results can be useful in the development of 3-D vision systems.

Quantitative measurement of channel-block hydraulic interactions by experimental saturation of a large, natural, fissured rock mass.

PubMed

Guglielmi, Y; Mudry, J

2001-01-01

The hydrodynamic behavior of fissured media relies on the relationships between a few very conductive fractures (channels) and the remaining low-conductivity fractures and matrix (blocks). We made a quantitative measurement of those relationships and their effect on water drainage and storage in a 19,000 m3 natural reservoir consisting of karstified limestones. This reservoir was artificially saturated with water by closing a water gate on the main outlet during a varying time (delta t) fixed by the operator. The water gate was completely or partly closed until the water pressure reached a particular specified value. If the water gate was left completely closed long enough, the water pressure was fixed by the elevation of temporary outlets at the site boundaries. The water elevation within the reservoir was monitored by means of pressure cells located on single fractures representative of the bedding plane and the two families of fractures of the massif network. The comparison of pressure variations with the network geometry allows us to identify a typical double permeability characterized by a few very conductive channels along 10 vertical faults. These channels limit blocks consisting of low-conductivity bedding planes and a rather impervious matrix. Depending on the closure interval, delta t, of the water gate, the total volume of water stored in the reservoir can vary from 0.8 m3 (delta t = 5 minutes) to 18.6 m3 (delta t = 2 days). Such a variance of storage versus closure time is explained by the reservoir's double permeability that is characterized by blocks that saturate much more slowly than channels. If plotted versus time, this injected volume fits a power relationship, according to the saturation state of the blocks. In less than 34 minutes, storage is close to zero in the blocks and to 1.6 to 2 m3 in the channels. For closing times shorter than 1 hour, only 1% of the volume that flows in the channels is stored into the blocks. Depending on the water pressure and for a given delta t = 3000 minutes, the volume of water stored is controlled by the geometry of the joint network and of the aquifer boundaries. Such an experiment shows that the flow is concentrated in about 10% of the fractured network (channels). The water storage that takes place in the 90% remaining fractures (blocks) depends mainly on time during which pressure remains high into the 10% channels. The accurate modeling of such typical double-permeability media needs a careful study of the geometry of the channels whose narrowings modify the flow and induce dam effects that maintain a high pressure gradient with surrounding blocks.

Opportunity's Surroundings After Sol 1820 Drive (Vertical)

NASA Technical Reports Server (NTRS)

2009-01-01

NASA's Mars Exploration Rover Opportunity used its navigation camera to take the images combined into this full-circle view of the rover's surroundings during the 1,820th to 1,822nd Martian days, or sols, of Opportunity's surface mission (March 7 to 9, 2009).

This view is presented as a vertical projection with geometric seam correction. North is at the top.

The rover had driven 20.6 meters toward the northwest on Sol 1820 before beginning to take the frames in this view. Tracks from that drive recede southwestward. For scale, the distance between the parallel wheel tracks is about 1 meter (about 40 inches).

The terrain in this portion of Mars' Meridiani Planum region includes dark-toned sand ripples and small exposures of lighter-toned bedrock.

Modeling of self-potential anomalies near vertical dikes.

USGS Publications Warehouse

Fitterman, D.V.

1983-01-01

The self-potential (SP) Green's function for an outcropping vertical dike is derived from solutions for the dc resistivity problem for the same geometry. The Green's functions are numerically integrated over rectangular source regions on the contacts between the dike and the surrounding material to obtain the SP anomaly. The analysis is valid for thermoelectrical source mechanisms. Two types of anomalies can be produced by this geometry. When the two source planes are polarized in opposite directions, a monopolar anomaly is produced. This corresponds to the thermoelectrical properties of the dike being in contrast with the surrounding material. When the thermoelectric coefficients change monotonically across the dike, a dipolar anomaly is produced. In either case positive and negative anomalies are possible, and the greatest variation in potential will occur in the most resistive regions. -Author

Field ion source development for neutron generators

NASA Astrophysics Data System (ADS)

Bargsten Johnson, B.; Schwoebel, P. R.; Holland, C. E.; Resnick, P. J.; Hertz, K. L.; Chichester, D. L.

2012-01-01

An ion source based on the principles of electrostatic field desorption is being developed to improve the performance of existing compact neutron generators. The ion source is an array of gated metal tips derived from field electron emitter array microfabrication technology. A comprehensive summary of development and experimental activities is presented. Many structural modifications to the arrays have been incorporated to achieve higher tip operating fields, while lowering fields at the gate electrode to prevent gate field electron emission which initiates electrical breakdown in the array. The latest focus of fabrication activities has been on rounding the gate electrode edge and surrounding the gate electrode with dielectric material. Array testing results have indicated a steady progression of increased array tip operating fields with each new design tested. The latest arrays have consistently achieved fields beyond those required for the onset of deuterium desorption (˜20 V/nm), and have demonstrated the desorption of deuterium at fields up to 36 V/nm. The number of ions desorbed from an array has been quantified, and field desorption of metal tip substrate material from array tips has been observed for the first time. Gas-phase field ionization studies with ˜10,000 tip arrays have achieved deuterium ion currents of ˜50 nA. Neutron production by field ionization has yielded ˜10 2 n/s from ˜1 mm 2 of array area using the deuterium-deuterium fusion reaction at 90 kV.

Thermodynamic limitations on the temperature sensitivity of cell-membrane ion channels: Trouble with enthalpy uncertainty

NASA Astrophysics Data System (ADS)

Zheltikov, A. M.

2018-06-01

Energy exchange between a thermodynamic ensemble of heat- and cold-activated cell-membrane ion channels and the surrounding heat reservoir is shown to impose fundamental limitations on the performance of such channels as temperature-controlled gates for thermal cell activation. Analysis of unavoidable thermodynamic internal-energy fluctuations caused by energy exchange between the ion channels and the heat bath suggests that the resulting enthalpy uncertainty is too high for a robust ion-current gating by a single ion channel, implying that large ensembles of ion channels are needed for thermal cell activation. We argue, based on this thermodynamic analysis, that, had thermosensitive cell-membrane ion channels operated individually, rather than as large ensembles, robust thermal cell activation would have been impossible because of thermodynamic fluctuations.

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

2005-01-01

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

NASA Astrophysics Data System (ADS)

Yan, Shi-Li; Xie, Zhi-Jian; Chen, Jian-Hao; Taniguchi, Takashi; Watanabe, Kenji

2017-03-01

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

Under the Golden Gate bridge: views of the sea floor near the entrance to San Francisco Bay, California

USGS Publications Warehouse

Dartnell, Peter; Barnard, Patrick L.; Chin, John L.; Hanes, Daniel; Kvitek, Rikk G.; Iampietro, Pat J.; Gardner, James V.

2006-01-01

San Francisco Bay in Northern California is one of the largest and most altered estuaries within the United States. The sea floor within the bay as well as at its entrance is constantly changing due to strong tidal currents, aggregate mining, dredge disposal, and the creation of new land using artificial fill. Understanding this dynamic sea floor is critical for addressing local environmental issues, which include defining pollution transport pathways, deciphering tectonics, and identifying benthic habitats. Mapping commercial interests such as safe ship navigation and dredge disposal is also significantly aided by such understanding. Over the past decade, the U.S. Geological Survey (USGS), the National Oceanic and Atmospheric Administration (NOAA), and California State University, Monterey Bay (CSUMB) in cooperation with the U.S. Army Corps of Engineers (USACOE) and the Center for Integrative Coastal Observation, Research and Education (CICORE) have partnered to map central San Francisco Bay and its entrance under the Golden Gate Bridge using multibeam echosounders. These sonar systems can continuously map to produce 100 percent coverage of the sea floor at meter-scale resolution and thus produce an unprecedented view of the floor of the bay. This poster shows views of the sea floor in west-central San Francisco Bay around Alcatraz and Angel Islands, underneath the Golden Gate Bridge, and through its entrance from the Pacific Ocean. The sea floor is portrayed as a shaded relief surface generated from the multibeam data color-coded for depth from light blues for the shallowest values to purples for the deepest. The land regions are portrayed by USGS digital orthophotographs (DOQs) overlaid on USGS digital elevation models (DEMs). The water depths have a 4x vertical exaggeration while the land areas have a 2x vertical exaggeration.

Vertical tectonic deformation associated with the San Andreas fault zone offshore of San Francisco, California

USGS Publications Warehouse

Ryan, H.F.; Parsons, T.; Sliter, R.W.

2008-01-01

A new fault map of the shelf offshore of San Francisco, California shows that faulting occurs as a distributed shear zone that involves many fault strands with the principal displacement taken up by the San Andreas fault and the eastern strand of the San Gregorio fault zone. Structures associated with the offshore faulting show compressive deformation near where the San Andreas fault goes offshore, but deformation becomes extensional several km to the north off of the Golden Gate. Our new fault map serves as the basis for a 3-D finite element model that shows that the block between the San Andreas and San Gregorio fault zone is subsiding at a long-term rate of about 0.2-0.3??mm/yr, with the maximum subsidence occurring northwest of the Golden Gate in the area of a mapped transtensional basin. Although the long-term rates of vertical displacement primarily show subsidence, the model of coseismic deformation associated with the 1906 San Francisco earthquake indicates that uplift on the order of 10-15??cm occurred in the block northeast of the San Andreas fault. Since 1906, 5-6??cm of regional subsidence has occurred in that block. One implication of our model is that the transfer of slip from the San Andreas fault to a fault 5??km to the east, the Golden Gate fault, is not required for the area offshore of San Francisco to be in extension. This has implications for both the deposition of thick Pliocene-Pleistocene sediments (the Merced Formation) observed east of the San Andreas fault, and the age of the Peninsula segment of the San Andreas fault.

Sub-1-V-60 nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

NASA Astrophysics Data System (ADS)

Ogasawara, Ryosuke; Endoh, Tetsuo

2018-04-01

In this study, with the aim to achieve a wide noise margin and an excellent power delay product (PDP), a vertical body channel (BC)-MOSFET-based six-transistor (6T) static random access memory (SRAM) array is evaluated by changing the number of pillars in each part of a SRAM cell, that is, by changing the cell ratio in the SRAM cell. This 60 nm vertical BC-MOSFET-based 6T SRAM array realizes 0.84 V operation under the best PDP and up to 31% improvement of PDP compared with the 6T SRAM array based on a 90 nm planar MOSFET whose gate length and channel width are the same as those of the 60 nm vertical BC-MOSFET. Additionally, the vertical BC-MOSFET-based 6T SRAM array achieves an 8.8% wider read static noise margin (RSNM), a 16% wider write margin (WM), and an 89% smaller leakage. Moreover, it is shown that changing the cell ratio brings larger improvements of RSNM, WM, and write time in the vertical BC-MOSFET-based 6T SRAM array.

Like a Good Neighbor, NCI-Frederick Is There | Poster

Cancer.gov

The main campus of the National Cancer Institute at Frederick is an island of sorts: 68 acres of land that was once part of Fort Detrick. Accessing NCI property means passing through the Fort Detrick gates and crossing the post. While the campus is surrounded by the military installation, is protected by NIH police, and doesn’t allow the use of tobacco products, it is not a

POWER REACTOR

DOEpatents

Zinn, W.H.

1958-07-01

A fast nuclear reactor system ls described for producing power and radioactive isotopes. The reactor core is of the heterogeneous, fluid sealed type comprised of vertically arranged elongated tubular fuel elements having vertical coolant passages. The active portion is surrounded by a neutron reflector and a shield. The system includes pumps and heat exchangers for the primary and secondary coolant circuits. The core, primary coolant pump and primary heat exchanger are disposed within an irapenforate tank which is filled with the primary coolant, in this case a liquid metal such as Na or NaK, to completely submerge these elements. The tank is completely surrounded by a thick walled concrete shield. This reactor system utilizes enriched uranium or plutonium as the fissionable material, uranium or thorium as a diluent and thorium or uranium containing less than 0 7% of the U/sup 235/ isotope as a fertile material.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Goldsman, Neil; Liu, Sandra; Titus, Jeffrey L.; Ladbury, Raymond L.; Kim, Hak S.; Phan, Anthony M.; LaBel, Kenneth A.; Zafrani, Max; Sherman, Phillip

2012-01-01

The relative importance of heavy-ion interaction with the oxide, charge ionized in the epilayer, and charge ionized in the drain substrate, on the bias for SEGR failure in vertical power MOSFETs is experimentally investigated. The results indicate that both the charge ionized in the epilayer and the ion atomic number are important parameters of SEGR failure. Implications on SEGR hardness assurance are discussed.

2D Vertical Heterostructures for Novel Tunneling Device Applications

DTIC Science & Technology

2017-03-01

controlled by a combination of the drain-source voltage bias (VDS) and the top and bottom gate biases (VTG and VBG, respectively). The drain-source...properties that can potentially overcome some of the limitations of epitaxial 3D semiconductor heterostructures. Simulations of 2D...interlayer barrier, such as h-BN, a high-k dielectric material, or a van der Waal gap. Under appropriate bias conditions, charge carriers can tunnel

Piezoelectric coupling in a field-effect transistor with a nanohybrid channel of ZnO nanorods grown vertically on graphene.

PubMed

Quang Dang, Vinh; Kim, Do-Il; Thai Duy, Le; Kim, Bo-Yeong; Hwang, Byeong-Ung; Jang, Mi; Shin, Kyung-Sik; Kim, Sang-Woo; Lee, Nae-Eung

2014-12-21

Piezoelectric coupling phenomena in a graphene field-effect transistor (GFET) with a nano-hybrid channel of chemical-vapor-deposited Gr (CVD Gr) and vertically aligned ZnO nanorods (NRs) under mechanical pressurization were investigated. Transfer characteristics of the hybrid channel GFET clearly indicated that the piezoelectric effect of ZnO NRs under static or dynamic pressure modulated the channel conductivity (σ) and caused a positive shift of 0.25% per kPa in the Dirac point. However, the GFET without ZnO NRs showed no change in either σ or the Dirac point. Analysis of the Dirac point shifts indicated transfer of electrons from the CVD Gr to ZnO NRs due to modulation of their interfacial barrier height under pressure. High responsiveness of the hybrid channel device with fast response and recovery times was evident in the time-dependent behavior at a small gate bias. In addition, the hybrid channel FET could be gated by mechanical pressurization only. Therefore, a piezoelectric-coupled hybrid channel GFET can be used as a pressure-sensing device with low power consumption and a fast response time. Hybridization of piezoelectric 1D nanomaterials with a 2D semiconducting channel in FETs enables a new design for future nanodevices.

Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60 nm CMOS technology on 300 mm wafer process

NASA Astrophysics Data System (ADS)

Imamoto, Takuya; Ma, Yitao; Muraguchi, Masakazu; Endoh, Tetsuo

2015-04-01

In this paper, DC and low-frequency noise (LFN) characteristics have been investigated with actual measurement data in both n- and p-type vertical MOSFETs (V-MOSFETs) for the first time. The V-MOSFETs which was fabricated on 300 mm bulk silicon wafer process have realized excellent DC performance and a significant reduction of flicker (1/f) noise. The measurement results show that the fabricated V-MOSFETs with 60 nm silicon pillar and 100 nm gate length achieve excellent steep sub-threshold swing (69 mV/decade for n-type and 66 mV/decade for p-type), good on-current (281 µA/µm for n-type 149 µA/µm for p-type), low off-leakage current (28.1 pA/µm for n-type and 79.6 pA/µm for p-type), and excellent on-off ratio (1 × 107 for n-type and 2 × 106 for p-type). In addition, it is demonstrated that our fabricated V-MOSFETs can control the threshold voltage (Vth) by changing the channel doping condition, which is the useful and low-cost technique as it has been widely used in the conventional bulk planar MOSFET. This result indicates that V-MOSFETs can control Vth more finely and flexibly by the combined the use of the doping technique with other techniques such as work function engineering of metal-gate. Moreover, it is also shown that V-MOSFETs can suppress 1/f noise (L\\text{gate}WS\\text{Id}/I\\text{d}2 of 10-13-10-11 µm2/Hz for n-type and 10-12-10-10 µm2/Hz for p-type) to one or two order lower level than previously reported nanowire type MOSFET, FinFET, Tri-Gate, and planar MOSFETs. The results have also proved that both DC and 1/f noise performances are independent from the bias voltage which is applied to substrate or well layer. Therefore, it is verified that V-MOSFETs can eliminate the effects from substrate or well layer, which always adversely affects the circuit performances due to this serial connection.

NEUTRONIC REACTOR

DOEpatents

Wade, E.J.

1958-09-16

This patent relates to a reflector means for a neutronic reactor. A reflector comprised of a plurality of vertically movable beryllium control members is provided surrounding the sides of the reactor core. An absorber of fast neutrons comprised of natural uramum surrounds the reflector. An absorber of slow neutrons surrounds the absorber of fast neutrons and is formed of a plurality of beryllium blocks having natural uranium members distributcd therethrough. in addition, a movable body is positioned directly below the core and is comprised of a beryllium reflector and an absorbing member attached to the botiom thereof, the absorbing member containing a substance selected from the goup consisting of natural urantum and Th/sup 232/.

Three-dimensional shape analysis of miarolitic cavities and enclaves in the Kakkonda granite by X-ray computed tomography

NASA Astrophysics Data System (ADS)

Ohtani, Tomoyuki; Nakano, Tsukasa; Nakashima, Yoshito; Muraoka, Hirofumi

2001-11-01

Three-dimensional shape analysis of miarolitic cavities and enclaves from the Kakkonda granite, NE Japan, was performed by X-ray computed tomography (CT) and image analysis. The three-dimensional shape of the miarolitic cavities and enclaves was reconstructed by stacked two-dimensional CT slice images with an in-plane resolution of 0.3 mm and an inter-slice spacing of 1 mm. An ellipsoid was fitted to each reconstructed object by the image processing programs. The shortest, intermediate, and longest axes of the ellipsoids fitted to miarolitic cavities had E-W, N-S, and vertical directions, respectively. The shortest axes of the ellipsoids fitted to enclaves were sub-vertical to vertical. Three-dimensional strains calculated from miarolitic cavities and enclaves have E-W and vertical shortening, respectively. The shape characteristics of miarolitic cavities probably reflect regional stress during the late magmatic stage, and those of enclaves reflect shortening by later-intruded magma or body rotation during the early magmatic stage. The miarolitic cavities may not be strained homogeneously with the surrounding granite, because the competence of minerals is different from that of the fluid-filled cavities. Although the strain markers require sufficient contrast between their CT numbers and those of the surrounding minerals, this method has several advantages over conventional methods, including the fact that it is non-destructive, expedient, and allows direct three-dimensional observation of each object.

Precise single-qubit control of the reflection phase of a photon mediated by a strongly-coupled ancilla–cavity system

NASA Astrophysics Data System (ADS)

Motzoi, F.; Mølmer, K.

2018-05-01

We propose to use the interaction between a single qubit atom and a surrounding ensemble of three level atoms to control the phase of light reflected by an optical cavity. Our scheme employs an ensemble dark resonance that is perturbed by the qubit atom to yield a single-atom single photon gate. We show here that off-resonant excitation towards Rydberg states with strong dipolar interactions offers experimentally-viable regimes of operations with low errors (in the 10‑3 range) as required for fault-tolerant optical-photon, gate-based quantum computation. We also propose and analyze an implementation within microwave circuit-QED, where a strongly-coupled ancilla superconducting qubit can be used in the place of the atomic ensemble to provide high-fidelity coupling to microwave photons.

Like a Good Neighbor, NCI-Frederick Is There | Poster

Cancer.gov

The main campus of the National Cancer Institute at Frederick is an island of sorts: 68 acres of land that was once part of Fort Detrick. Accessing NCI property means passing through the Fort Detrick gates and crossing the post. While the campus is surrounded by the military installation, is protected by NIH police, and doesn’t allow the use of tobacco products, it is not a part of the military.

The influence of chromatic context on binocular color rivalry: Perception and neural representation

PubMed Central

Hong, Sang Wook; Shevell, Steven K.

2008-01-01

The predominance of rivalrous targets is affected by surrounding context when stimuli rival in orientation, motion or color. This study investigated the influence of chromatic context on binocular color rivalry. The predominance of rivalrous chromatic targets was measured in various surrounding contexts. The first experiment showed that a chromatic surround's influence was stronger when the surround was uniform or a grating with luminance contrast (chromatic/black grating) compared to an equiluminant grating (chromatic/white). The second experiment revealed virtually no effect of the orientation of the surrounding chromatic context, using chromatically rivalrous vertical gratings. These results are consistent with a chromatic representation of the context by a non-oriented, chromatically selective and spatially antagonistic receptive field. Neither a double-opponent receptive field nor a receptive field without spatial antagonism accounts for the influence of context on binocular color rivalry. PMID:18331750

Agonist trapped in ATP-binding sites of the P2X2 receptor.

PubMed

Jiang, Ruotian; Lemoine, Damien; Martz, Adeline; Taly, Antoine; Gonin, Sophie; Prado de Carvalho, Lia; Specht, Alexandre; Grutter, Thomas

2011-05-31

ATP-gated P2X receptors are trimeric ion channels, as recently confirmed by X-ray crystallography. However, the structure was solved without ATP and even though extracellular intersubunit cavities surrounded by conserved amino acid residues previously shown to be important for ATP function were proposed to house ATP, the localization of the ATP sites remains elusive. Here we localize the ATP-binding sites by creating, through a proximity-dependent "tethering" reaction, covalent bonds between a synthesized ATP-derived thiol-reactive P2X2 agonist (NCS-ATP) and single cysteine mutants engineered in the putative binding cavities of the P2X2 receptor. By combining whole-cell and single-channel recordings, we report that NCS-ATP covalently and specifically labels two previously unidentified positions N140 and L186 from two adjacent subunits separated by about 18 Å in a P2X2 closed state homology model, suggesting the existence of at least two binding modes. Tethering reaction at both positions primes subsequent agonist binding, yet with distinct functional consequences. Labeling of one position impedes subsequent ATP function, which results in inefficient gating, whereas tethering of the other position, although failing to produce gating by itself, enhances subsequent ATP function. Our results thus define a large and dynamic intersubunit ATP-binding pocket and suggest that receptors trapped in covalently agonist-bound states differ in their ability to gate the ion channel.

Pore Helices Play a Dynamic Role as Integrators of Domain Motion during Kv11.1 Channel Inactivation Gating*

PubMed Central

Perry, Matthew D.; Ng, Chai Ann; Vandenberg, Jamie I.

2013-01-01

Proteins that form ion-selective pores in the membrane of cells are integral to many rapid signaling processes, including regulating the rhythm of the heartbeat. In potassium channels, the selectivity filter is critical for both endowing an exquisite selectivity for potassium ions, as well as for controlling the flow of ions through the pore. Subtle rearrangements in the complex hydrogen-bond network that link the selectivity filter to the surrounding pore helices differentiate conducting (open) from nonconducting (inactivated) conformations of the channel. Recent studies suggest that beyond the selectivity filter, inactivation involves widespread rearrangements of the channel protein. Here, we use rate equilibrium free energy relationship analysis to probe the structural changes that occur during selectivity filter gating in Kv11.1 channels, at near atomic resolution. We show that the pore helix plays a crucial dynamic role as a bidirectional interface during selectivity filter gating. We also define the molecular bases of the energetic coupling between the pore helix and outer helix of the pore domain that occurs early in the transition from open to inactivated states, as well as the coupling between the pore helix and inner helix late in the transition. Our data demonstrate that the pore helices are more than just static structural elements supporting the integrity of the selectivity filter; instead they play a crucial dynamic role during selectivity filter gating. PMID:23471968

Sustainable Improvement of Urban River Network Water Quality and Flood Control Capacity by a Hydrodynamic Control Approach-Case Study of Changshu City

NASA Astrophysics Data System (ADS)

Xie, Chen; Yang, Fan; Liu, Guoqing; Liu, Yang; Wang, Long; Fan, Ziwu

2017-01-01

Water environment of urban rivers suffers degradation with the impacts of urban expansion, especially in Yangtze River Delta. The water area in cites decreased sharply, and some rivers were cut off because of estate development, which brings the problems of urban flooding, flow stagnation and water deterioration. The approach aims to enhance flood control capability and improve the urban river water quality by planning gate-pump stations surrounding the cities and optimizing the locations and functions of the pumps, sluice gates, weirs in the urban river network. These gate-pump stations together with the sluice gates and weirs guarantee the ability to control the water level in the rivers and creating hydraulic gradient artificially according to mathematical model. Therefore the flow velocity increases, which increases the rate of water exchange, the DO concentration and water body self-purification ability. By site survey and prototype measurement, the river problems are evaluated and basic data are collected. The hydrodynamic model of the river network is established and calibrated to simulate the scenarios. The schemes of water quality improvement, including optimizing layout of the water distribution projects, improvement of the flow discharge in the river network and planning the drainage capacity are decided by comprehensive Analysis. Finally the paper introduces the case study of the approach in Changshu City, where the approach is successfully implemented.

Accuracy of vertical radial plume mapping technique in measuring lagoon gas emissions.

PubMed

Viguria, Maialen; Ro, Kyoung S; Stone, Kenneth C; Johnson, Melvin H

2015-04-01

Recently, the U.S. Environmental Protection Agency (EPA) posted a ground-based optical remote sensing method on its Web site called Other Test Method (OTM) 10 for measuring fugitive gas emission flux from area sources such as closed landfills. The OTM 10 utilizes the vertical radial plume mapping (VRPM) technique to calculate fugitive gas emission mass rates based on measured wind speed profiles and path-integrated gas concentrations (PICs). This study evaluates the accuracy of the VRPM technique in measuring gas emission from animal waste treatment lagoons. A field trial was designed to evaluate the accuracy of the VRPM technique. Control releases of methane (CH4) were made from a 45 m×45 m floating perforated pipe network located on an irrigation pond that resembled typical treatment lagoon environments. The accuracy of the VRPM technique was expressed by the ratio of the calculated emission rates (QVRPM) to actual emission rates (Q). Under an ideal condition of having mean wind directions mostly normal to a downwind vertical plane, the average VRPM accuracy was 0.77±0.32. However, when mean wind direction was mostly not normal to the downwind vertical plane, the emission plume was not adequately captured resulting in lower accuracies. The accuracies of these nonideal wind conditions could be significantly improved if we relaxed the VRPM wind direction criteria and combined the emission rates determined from two adjacent downwind vertical planes surrounding the lagoon. With this modification, the VRPM accuracy improved to 0.97±0.44, whereas the number of valid data sets also increased from 113 to 186. The need for developing accurate and feasible measuring techniques for fugitive gas emission from animal waste lagoons is vital for livestock gas inventories and implementation of mitigation strategies. This field lagoon gas emission study demonstrated that the EPA's vertical radial plume mapping (VRPM) technique can be used to accurately measure lagoon gas emission with two downwind vertical concentration planes surrounding the lagoon.

Modeling, Fabrication, and Analysis of Vertical Conduction Gallium Nitride Fin MOSFET

NASA Astrophysics Data System (ADS)

Tahhan, Maher Bishara

Gallium Nitride has seen much interest in the field of electronics due to its large bandgap and high mobility. In the field of power electronics, this combination leads to a low on-resistance for a given breakdown voltage. To take full advantage of this, vertical conduction transistors in GaN can give high breakdown voltages independent of chip area, leading to transistors with nominally low on resistance with high breakdown at a low cost. Acknowledging this, a vertical transistor design is presented with a small footprint area. This design utilizes a fin structure as a double gated insulated MESFET with electrons flowing from the top of the fin downward. The transistor's characteristics and design is initially explored via simulation and modelling. In this modelling, it is found that the narrow dimension of the fin must be sub-micron to allow for the device to be turned off with no leakage current and have a positive threshold voltage. Several process modules are developed and integrated to fabricate the device. A smooth vertical etch leaving low damage to the surfaces is demonstrated and characterized, preventing micromasking during the GaN dry etch. Methods of removing damage from the dry etch are tested, including regrowth and wet etching. Several hard masks were developed to be used in conjunction with this GaN etch for various requirements of the process, such as material constraints and self-aligning a metal contact. Multiple techniques are tested to deposit and pattern the gate oxide and metal to ensure good contact with the channel without causing unwanted shorts. To achieve small fin dimensions, a self-aligned transistor process flow is presented allowing for smaller critical dimensions at increased fabrication tolerances by avoiding the use of lithographic steps that require alignments to very high accuracy. In the case of the device design presented, the fins are lithographically defined at the limit of i-line stepper system. From this single lithography, the sources are formed, fins are etched, and the gate insulator and metal are deposited. The first functional fabricated devices are presented, but exhibit a few differences from the model. A threshold voltage of -6 V, was measured, with an ID of 5 kA/cm2 at 3 V, and Ron of 0.6 mO/cm 2. The current is limited by the Schottky nature of the top contacts and show a turn-on voltage as a result. These measurements are comparable to recently published GaN fin MOSFET data, whose devices were defined by e-beam lithography. This dissertation work sought to show that a vertical conduction fin MOSFET can be fabricated on GaN. Furthermore, it aimed to provide a self-aligned process that does not require e-beam lithography. With further development, such devices can be designed to hold large voltages while maintaining a small footprint.

Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

PubMed

Jung, Byung Jun; Martinez Hardigree, Josue F; Dhar, Bal Mukund; Dawidczyk, Thomas J; Sun, Jia; See, Kevin Cua; Katz, Howard E

2011-04-26

We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 μA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 μm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.

10 CFR 60.122 - Siting criteria.

Code of Federal Regulations, 2010 CFR

2010-01-01

... with low horizontal and vertical permeability; (ii) Downward or dominantly horizontal hydraulic... permeability and low hydraulic gradient between the host rock and the surrounding hydrogeologic units. (3... REGULATORY COMMISSION (CONTINUED) DISPOSAL OF HIGH-LEVEL RADIOACTIVE WASTES IN GEOLOGIC REPOSITORIES...

Study of the motion and deposition of micro particles in a vertical tube containing uniform gas flow

NASA Astrophysics Data System (ADS)

Abolpour, Bahador; Afsahi, M. Mehdi; Soltani Goharrizi, Ataallah; Azizkarimi, Mehdi

2017-12-01

In this study, effects of a gaseous jet, formed in a vertical tube containing a uniform gas flow, on the injected micro particles have been investigated. A CFD model has been developed to simulate the particle motion in the tube. This simulation is very close to the experimental data. The results show that, increasing the flow rate of carrier gas or decreasing the flow rate of surrounding gas increases the effect of gaseous jet and also increases trapping rate of the particles by the tube wall. The minimum and maximum residence times of particles approach together with increasing the size of solid particles. Particles larger than 60 μm have a certain and fixed residence time at different flow rates of the carrier or surrounding gas. About 40 μm particle size has minimal trapping by the tube wall at various experimental conditions.

Organizing vertical layout environments: a forward-looking development strategy for high-rise building projects

NASA Astrophysics Data System (ADS)

Magay, A. A.; Bulgakova, E. A.; Zabelina, S. A.

2018-03-01

The article highlights issues surrounding development of high rise buildings. With the rapid increase of the global population there has been a trend for people to migrate into megacities and has caused the expansion of big city territories. This trend, coupled with the desire for a comfortable living environment, has resulted in numerous problems plaguing the megacity. This article proposes that a viable solution to the problems facing megacities is to create vertical layout environments. Potential options for creating vertical layout environments are set out below including the construction of buildings with atriums. Further, the article puts forth suggested spatial organization of the environment as well as optimal landscaping of high-rise buildings and constructions for the creation of vertical layout environments. Finally, the persuasive reasons for the adoption of vertical layout environments is that it will decrease the amount of developed urban areas, decrease traffic and increase environmental sustainability.

18. VIEW SOUTHWEST OF 450 HP TURBINE INSTALLATION IN BASEMENT ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

18. VIEW SOUTHWEST OF 450 HP TURBINE INSTALLATION IN BASEMENT OF GRANITEVILLE MILL. MAIN FEATURE OF THE PHOTOGRAPH IS THE PENSTOCK CONDUCTING WATER TO THE TURBINE IN THE BACKGROUND. THE PENSTOCK IS OF RIVETED IRON CONSTRUCTION AND REPLACED A WOOD PENSTOCK IN 1882. THE COVERED OPENING IN THE CENTER OF THE PHOTOGRAPH ORIGINALLY CONNECTED TO A STANDPIPE WHICH EXITED VERTICALLY THROUGH THE MILL. THE STANDPIPE MODERATED WATER PRESSURE AND SERVED AS A SAFETY FEATURE IN THE EVENT THE TURBINE GATES WERE RAPIDLY CLOSED. (IF LOAD IN THE MILL WERE SUDDENLY STOPPED-SAY AT QUITTING TIME-THE GATES WOULD SHUT DOWN FLOW TO THE TURBINE. THE STANDPIPE OFFERED A PLACE FOR THE WATER, RAPIDLY MOVING THROUGH THE PENSTOCK, TO ESCAPE. IN A SHUT-DOWN SITUATION WATER WOULD ... - Graniteville Mill, Marshall Street, Graniteville, Aiken County, SC

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-11-05

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

PubMed Central

Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

2013-01-01

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

Reconciling GRACE and GPS estimates of long-term load deformation in southern Greenland

NASA Astrophysics Data System (ADS)

Wang, Song-Yun; Chen, J. L.; Wilson, Clark R.; Li, Jin; Hu, Xiaogong

2018-02-01

We examine vertical load deformation at four continuous Global Positioning System (GPS) sites in southern Greenland relative to Gravity Recovery and Climate Experiment (GRACE) predictions of vertical deformation over the period 2002-2016. With limited spatial resolution, GRACE predictions require adjustment before they can be compared with GPS height time series. Without adjustment, both GRACE spherical harmonic (SH) and mascon solutions predict significant vertical displacement rate differences relative to GPS. We use a scaling factor method to adjust GRACE results, based on a long-term mass rate model derived from GRACE measurements, glacial geography, and ice flow data. Adjusted GRACE estimates show significantly improved agreement with GPS, both in terms of long-term rates and interannual variations. A deceleration of mass loss is observed in southern Greenland since early 2013. The success at reconciling GPS and GRACE observations with a more detailed mass rate model demonstrates the high sensitivity to load distribution in regions surrounding GPS stations. Conversely, the value of GPS observations in constraining mass changes in surrounding regions is also demonstrated. In addition, our results are consistent with recent estimates of GIA uplift (˜4.4 mm yr-1) at the KULU site.

Probing the SEB Sensitive Depth of a Power MOSFET Using a Two-Photon Absorption Laser Method

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie; Liu, Sandra; Titus, Jeffrey L.; McMorrow, Dale; Casey, Megan C.; Buchner, Stephen P.; Warner, Jeffrey; Phan, Anthony M.; Topper, Alyson D.; Kim, Hak S.;

Near vertical view of Lubbock area in west Texas as seen from Apollo 9

NASA Image and Video Library

1969-03-11

AS09-23-3561 (3-13 March 1969) --- Near vertical view of the Lubbock area in west Texas as photographed from the Apollo 9 spacecraft during its Earth-orbital mission. Conspicuous patterns of farmland surround the city and extend eastward (up) to the Caprock Escarpment. The Double Mountain fork of the Brazos River drains east (toward upper center); Leeland is at lower center; Brownfield at lower right. The sharp edge of a cloud disk cuts across the upper right corner.

Reactor hold-down arrangement

DOEpatents

McCugh, Ralph

1976-05-25

A nuclear reactor contains an assembly of moderator blocks, laid end-to-end, one on top of another, and alongside one another, which blocks are restrained by vertical beams at each side of the assembly, fixed horizontal beams surrounding the assembly at the top and bottom and springs connecting the fixed horizontal beams and the ends of the vertical beams in such a way as to permit relatively high expansion midway of the height of the assembly while restricting expansion near the top of the assembly.

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

NASA Astrophysics Data System (ADS)

Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Franquet, Alexis; Richard, Olivier; Bender, Hugo; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

2018-04-01

Vertical InAs nanowires (NWs) grown on a Si substrate are promising building-blocks for next generation vertical gate-all-around transistor fabrication. We investigate the initial stage of InAs NW selective area epitaxy (SAE) on a patterned Si (111) substrate with a focus on the interfacial structures. The direct epitaxy of InAs NWs on a clean Si (111) surface is found to be challenging. The yield of vertical InAs NWs is low, as the SAE is accompanied by high proportions of empty holes, inclined NWs, and irregular blocks. In contrast, it is improved when the NW contains gallium, and the yield of vertical InxGa1-xAs NWs increased with higher Ga content. Meanwhile, unintentional Ga surface contamination on a patterned Si substrate induces high yield vertical InAs NW SAE, which is attributed to a GaAs-like seeding layer formed at the InAs/Si interface. The role of Ga played in the III-V NW nucleation on Si is further discussed. It stabilizes the B-polarity on a non-polar Si (111) surface and enhances the nucleation. Therefore, gallium incorporation on a Si surface is identified as an important enabler for vertical InAs NW growth. A new method for high yield (>99%) vertical InAs NW SAE on Si using an InGaAs nucleation layer is proposed based on this study.

Two-dimensional Kerr-Fourier imaging of translucent phantoms in thick turbid media

NASA Astrophysics Data System (ADS)

Liang, X.; Wang, L.; Ho, P. P.; Alfano, R. R.

1995-06-01

Translucent scattering phantoms hidden inside a 5.5-cm-thick Intralipid solution were imaged as a function of phantom scattering coefficients by the use of a picosecond time-and space-gated Kerr-Fourier imaging system. A 2-mm-thick translucent phantom with a 0.1% concentration (scattering coefficient) difference from the 55-mm-thick surrounding scattering host can be distinguished at a signal level of approximately 10-10 of the incidence illumination intensity.

Environmental Assessment for Replacement of the Main Gate Facility at New Boston Air Force Station, New Hampshire

DTIC Science & Technology

2015-01-01

rural portions of the towns of New Boston, Amherst, and Mont Vernon. The area is primarily designated for low- density residential use (USAF 2001...quiet outdoor and residential areas (EPA 1974). For protection against hearing loss in the general population from non-impulsive noise, the EPA guideline...rural with interspersed forests and residential areas. Land cover on the station is consistent with the surrounding area, and much of the habitat

Environmental Assessment for Replacement of the Main Gate Facility at New Boston Air Force Station, New Hampshire

DTIC Science & Technology

2015-01-01

portions of the towns of New Boston, Amherst, and Mont Vernon. The area is primarily designated for low- density residential use (USAF 2001). Single...and residential areas (EPA 1974). For protection against hearing loss in the general population from non-impulsive noise, the EPA guideline...interspersed forests and residential areas. Land cover on the station is consistent with the surrounding area, and much of the habitat present on

Quantum Hall signatures of dipolar Mahan excitons

NASA Astrophysics Data System (ADS)

Schinner, G. J.; Repp, J.; Kowalik-Seidl, K.; Schubert, E.; Stallhofer, M. P.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Govorov, A. O.; Holleitner, A. W.; Kotthaus, J. P.

2013-01-01

We explore the photoluminescence of spatially indirect, dipolar Mahan excitons in a gated double quantum well diode containing a mesoscopic electrostatic trap for neutral dipolar excitons at low temperatures down to 250 mK and in quantizing magnetic fields. Mahan excitons in the surrounding of the trap, consisting of individual holes interacting with a degenerate two-dimensional electron system confined in one of the quantum wells, exhibit strong quantum Hall signatures at integer filling factors and related anomalies around filling factor ν=(2)/(3),(3)/(5), and (1)/(2), reflecting the formation of composite fermions. Interactions across the trap perimeter are found to influence the energy of the confined neutral dipolar excitons by the presence of the quantum Hall effects in the two-dimensional electron system surrounding the trap.

NEUTRONIC REACTOR

DOEpatents

Hurwitz, H. Jr.; Brooks, H.; Mannal, C.; Payne, J.H.; Luebke, E.A.

1959-03-24

A reactor of the heterogeneous, liquid cooled type is described. This reactor is comprised of a central region of a plurality of vertically disposed elongated tubes surrounded by a region of moderator material. The central region is comprised of a central core surrounded by a reflector region which is surrounded by a fast neutron absorber region, which in turn is surrounded by a slow neutron absorber region. Liquid sodium is used as the primary coolant and circulates through the core which contains the fuel elements. Control of the reactor is accomplished by varying the ability of the reflector region to reflect neutrons back into the core of the reactor. For this purpose the reflector is comprised of moderator and control elements having varying effects on reactivity, the control elements being arranged and actuated by groups to give regulation, shim, and safety control.

Solving A Corrosion Problem

NASA Technical Reports Server (NTRS)

1979-01-01

The corrosion problem, it turned out, stemmed from the process called electrolysis. When two different metals are in contact, an electrical potential is set up between them; when the metals are surrounded by an electrolyte, or a conducting medium, the resulting reaction causes corrosion, often very rapid corrosion. In this case the different metals were the copper grounding system and the ferry's aluminum hull; the dockside salt water in which the hull was resting served as the electrolyte. After identifying the source of the trouble, the Ames engineer provided a solution: a new wire-and-rod grounding system made of aluminum like the ferry's hull so there would no longer be dissimilar metals in contact. Ames research on the matter disclosed that the problem was not unique to the Golden Gate ferries. It is being experienced by many pleasure boat operators who are probably as puzzled about it as was the Golden Gate Transit Authority.

p-MOSFET total dose dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

1994-01-01

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

NASA Astrophysics Data System (ADS)

Simoen, Eddy; Gaillardin, Marc; Paillet, Philippe; Reed, Robert A.; Schrimpf, Ron D.; Alles, Michael L.; El-Mamouni, Farah; Fleetwood, Daniel M.; Griffoni, Alessio; Claeys, Cor

2013-06-01

The aim of this review paper is to describe in a comprehensive manner the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies. Total Ionizing Dose (TID) response, heavy-ion microdose effects and single-event effects (SEEs) will be discussed. It is shown that a very high TID tolerance can be achieved by narrow-fin SOI FinFET architectures, while bulk FinFETs may exhibit similar TID response to the planar devices. Due to the vertical nature of FinFETs, a specific heavy-ion response can be obtained, whereby the angle of incidence becomes highly important with respect to the vertical sidewall gates. With respect to SEE, the buried oxide in the SOI FinFETs suppresses the diffusion tails from the charge collection in the substrate compared to the planar bulk FinFET devices. Channel lengths and fin widths are now comparable to, or smaller than the dimensions of the region affected by the single ionizing ions or lasers used in testing. This gives rise to a high degree of sensitivity to individual device parameters and source-drain shunting during ion-beam or laser-beam SEE testing. Simulations are used to illuminate the mechanisms observed in radiation testing and the progress and needs for the numerical modeling/simulation of the radiation response of advanced SOI and FinFET transistors are highlighted.

Wheels-Off Time Uncertainty Impact on Benefits of Early Call for Release Scheduling

NASA Technical Reports Server (NTRS)

Palopo, Kee; Chatterji, Gano B.; Almog, Noam

2017-01-01

Arrival traffic scenarios with 808 flights from 173 airports to Houston George Bush International airport are simulated to determine if Call For Release flights can receive a benefit in terms of less delay over other flights by scheduling prior to gate pushback (look-ahead in time) as opposed to at gate pushback. Call for Release flights are departures that require approval from Air Route Traffic Control Center prior to release. Realism is brought to the study by including gate departure delay and taxi-out delay uncertainties for the 77 major U. S. airports. Gate departure delay uncertainty is assumed to increase as a function of look-ahead time. Results show that Call For Release flights from an airport within the freeze horizon (a region surrounding the arrival airport) can get an advantage over other flights to a capacity constrained airport by scheduling prior to gate pushback, provided the wheels-off time uncertainty with respect to schedule is controlled to a small value, such as within a three-minute window. Another finding of the study is that system delay, measured as the sum of arrival delays, is smaller when flights are scheduled in the order of arrival compared to in the order of departure. Because flights from airports within the freeze horizon are scheduled in the order of departure, an increase in the number of internal airports with a larger freeze horizon increases system delay. Delay in the given scenario was found to increase by 126% (from 13.8 hours to 31.2 hours) as freeze horizon was increased from 30-minutes to 2-hours in the baseline scenario.

Conserved Allosteric Hot Spots in the Transmembrane Domains of Cystic Fibrosis Transmembrane Conductance Regulator (CFTR) Channels and Multidrug Resistance Protein (MRP) Pumps*

PubMed Central

Wei, Shipeng; Roessler, Bryan C.; Chauvet, Sylvain; Guo, Jingyu; Hartman, John L.; Kirk, Kevin L.

2014-01-01

ATP-binding cassette (ABC) transporters are an ancient family of transmembrane proteins that utilize ATPase activity to move substrates across cell membranes. The ABCC subfamily of the ABC transporters includes active drug exporters (the multidrug resistance proteins (MRPs)) and a unique ATP-gated ion channel (cystic fibrosis transmembrane conductance regulator (CFTR)). The CFTR channel shares gating principles with conventional ligand-gated ion channels, but the allosteric network that couples ATP binding at its nucleotide binding domains (NBDs) with conformational changes in its transmembrane helices (TMs) is poorly defined. It is also unclear whether the mechanisms that govern CFTR gating are conserved with the thermodynamically distinct MRPs. Here we report a new class of gain of function (GOF) mutation of a conserved proline at the base of the pore-lining TM6. Multiple substitutions of this proline promoted ATP-free CFTR activity and activation by the weak agonist, 5′-adenylyl-β,γ-imidodiphosphate (AMP-PNP). TM6 proline mutations exhibited additive GOF effects when combined with a previously reported GOF mutation located in an outer collar of TMs that surrounds the pore-lining TMs. Each TM substitution allosterically rescued the ATP sensitivity of CFTR gating when introduced into an NBD mutant with defective ATP binding. Both classes of GOF mutations also rescued defective drug export by a yeast MRP (Yor1p) with ATP binding defects in its NBDs. We conclude that the conserved TM6 proline helps set the energy barrier to both CFTR channel opening and MRP-mediated drug efflux and that CFTR channels and MRP pumps utilize similar allosteric mechanisms for coupling conformational changes in their translocation pathways to ATP binding at their NBDs. PMID:24876383

Conserved allosteric hot spots in the transmembrane domains of cystic fibrosis transmembrane conductance regulator (CFTR) channels and multidrug resistance protein (MRP) pumps.

PubMed

Wei, Shipeng; Roessler, Bryan C; Chauvet, Sylvain; Guo, Jingyu; Hartman, John L; Kirk, Kevin L

2014-07-18

ATP-binding cassette (ABC) transporters are an ancient family of transmembrane proteins that utilize ATPase activity to move substrates across cell membranes. The ABCC subfamily of the ABC transporters includes active drug exporters (the multidrug resistance proteins (MRPs)) and a unique ATP-gated ion channel (cystic fibrosis transmembrane conductance regulator (CFTR)). The CFTR channel shares gating principles with conventional ligand-gated ion channels, but the allosteric network that couples ATP binding at its nucleotide binding domains (NBDs) with conformational changes in its transmembrane helices (TMs) is poorly defined. It is also unclear whether the mechanisms that govern CFTR gating are conserved with the thermodynamically distinct MRPs. Here we report a new class of gain of function (GOF) mutation of a conserved proline at the base of the pore-lining TM6. Multiple substitutions of this proline promoted ATP-free CFTR activity and activation by the weak agonist, 5'-adenylyl-β,γ-imidodiphosphate (AMP-PNP). TM6 proline mutations exhibited additive GOF effects when combined with a previously reported GOF mutation located in an outer collar of TMs that surrounds the pore-lining TMs. Each TM substitution allosterically rescued the ATP sensitivity of CFTR gating when introduced into an NBD mutant with defective ATP binding. Both classes of GOF mutations also rescued defective drug export by a yeast MRP (Yor1p) with ATP binding defects in its NBDs. We conclude that the conserved TM6 proline helps set the energy barrier to both CFTR channel opening and MRP-mediated drug efflux and that CFTR channels and MRP pumps utilize similar allosteric mechanisms for coupling conformational changes in their translocation pathways to ATP binding at their NBDs. © 2014 by The American Society for Biochemistry and Molecular Biology, Inc.

A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

PubMed

Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

2016-08-01

This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process.

Low track height standard-cells enable high-placement density and low-BEOL cost (Conference Presentation)

NASA Astrophysics Data System (ADS)

Debacker, Peter; Matti, Luca; Sherazi, Syed M. Y.; Baert, Rogier; Gerousis, Vassilios; Nauts, Claire; Raghavan, Praveen; Ryckaert, Julien; Kim, Ryoung-Han; Verkest, Diederik

2017-04-01

Making standards cells smaller by lowering the cell height from 7.5 tracks to 6 tracks for the same set of ground rules is an efficient way to reduce area for high density digital IP blocks without increasing wafer cost. Denser cells however also imply a higher pin density and possible more routing congestion because of that. In Place and Route phase, this limits the cell density (a.k.a. utilization) that can be reached without design rule violations. This study shows that 6-track cells (192nm high) and smart routing results in up to 60% lower area than 7.5-track cells in N5 technology. Standard cells have been created for 7.5T and 6T cells in N5 technology (poly pitch 42nm, metal pitch 32nm). The cells use a first horizontal routing layer (Mint) and vertical M1 for 1D intra-cell routing as much as possible. Place and route was performed on an opencores LDPC decoder. Various cell architectures and place and route optimizations are used to scale down the cell area and improve density. Most are not process optimizations, but optimized cell architectures and routing methods: • Open M1: M1 is removed as much as possible. This allows the router to use M1 for inter-cell routing in dense areas. • Routing in Mint: With open M1 the router can also use Mint to extend pins to access nearby free M1 tracks in congested areas. • Outbound rail: The 7.5T cells have inbound VDD/VSS rails in Mint for easy supply tapping. Moving the Mint rail outbound and shared between cells is required to enable lower track height cells. • Vertical Power distribution network (PDN): in 6T cells too many horizontal tracks would be consumed by the wide M2 rail. Mint is used instead combined with a vertical PDN in M1. • Self-Aligned Gate Contact allows to contact the gate on top of active fins. Any Mint track then can contact a gate, reducing cell area considerably. • Partially landing Mint Via trench: In 6T cells, a continuous Via trench underneath the Mint rail is used. This via partially lands on M0A to relax tip-to-tip requirements. • Relaxed M2 pitch: When pin access is handled in Mint and M1, this allows for a relaxed M2 pitch (48nm) with cheaper double patterning. To avoid horizontal routing layer congestion with the smaller cells, the 6T cells depend on the vertical PDN and open M1 to improve routability and pin access. Already in 7.5T cells, open M1 and vertical PDN help to improve routable utilization from 50% with closed M1 to 85% maximum. Moving to 6T cells, the combination of reduced cell area and high 85% utilization of result in a 60% area reduction vs the original 7.5T cells. We have shown that combining 6-track cells and smart routing results in up to 60% lower area than 7.5-track cells in N5 technology. Open M1 and vertical PDN are main area boosters for any cell architecture, boosting utilization from 50% to 85% already for the 7.5T cells.

Vertical visual features have a strong influence on cuttlefish camouflage.

PubMed

Ulmer, K M; Buresch, K C; Kossodo, M M; Mäthger, L M; Siemann, L A; Hanlon, R T

2013-04-01

Cuttlefish and other cephalopods use visual cues from their surroundings to adaptively change their body pattern for camouflage. Numerous previous experiments have demonstrated the influence of two-dimensional (2D) substrates (e.g., sand and gravel habitats) on camouflage, yet many marine habitats have varied three-dimensional (3D) structures among which cuttlefish camouflage from predators, including benthic predators that view cuttlefish horizontally against such 3D backgrounds. We conducted laboratory experiments, using Sepia officinalis, to test the relative influence of horizontal versus vertical visual cues on cuttlefish camouflage: 2D patterns on benthic substrates were tested versus 2D wall patterns and 3D objects with patterns. Specifically, we investigated the influence of (i) quantity and (ii) placement of high-contrast elements on a 3D object or a 2D wall, as well as (iii) the diameter and (iv) number of 3D objects with high-contrast elements on cuttlefish body pattern expression. Additionally, we tested the influence of high-contrast visual stimuli covering the entire 2D benthic substrate versus the entire 2D wall. In all experiments, visual cues presented in the vertical plane evoked the strongest body pattern response in cuttlefish. These experiments support field observations that, in some marine habitats, cuttlefish will respond to vertically oriented background features even when the preponderance of visual information in their field of view seems to be from the 2D surrounding substrate. Such choices highlight the selective decision-making that occurs in cephalopods with their adaptive camouflage capability.

High voltage MOSFET devices and methods of making the devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+more » region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.« less

A field programmable gate array unit for the diagnosis and control of neoclassical tearing modes on MAST

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Gorman, T.; Gibson, K. J.; Snape, J. A.

2012-10-15

A real-time system has been developed to trigger both the MAST Thomson scattering (TS) system and the plasma control system on the phase and amplitude of neoclassical tearing modes (NTMs), extending the capabilities of the original system. This triggering system determines the phase and amplitude of a given NTM using magnetic coils at different toroidal locations. Real-time processing of the raw magnetic data occurs on a low cost field programmable gate array (FPGA) based unit which permits triggering of the TS lasers on specific amplitudes and phases of NTM evolution. The MAST plasma control system can receive a separate triggermore » from the FPGA unit that initiates a vertical shift of the MAST magnetic axis. Such shifts have fully removed m/n= 2/1 NTMs instabilities on a number of MAST discharges.« less

High voltage MOSFET devices and methods of making the devices

DOEpatents

Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

2015-12-15

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Raef S.; Shen, Sui; Ove, Roger

We wanted to describe a technique for the implementation of intensity-modulated radiotherapy (IMRT) with a real-time position monitor (RPM) respiratory gating system for the treatment of pleural space with intact lung. The technique is illustrated by a case of pediatric osteosarcoma, metastatic to the pleura of the right lung. The patient was simulated in the supine position where a breathing tracer and computed tomography (CT) scans synchronized at end expiration were acquired using the RPM system. The gated CT images were used to define target volumes and critical structures. Right pleural gated IMRT delivered at end expiration was prescribed tomore » a dose of 44 Gy, with 55 Gy delivered to areas of higher risk via simultaneous integrated boost (SIB) technique. IMRT was necessary to avoid exceeding the tolerance of intact lung. Although very good coverage of the target volume was achieved with a shell-shaped dose distribution, dose over the targets was relatively inhomogeneous. Portions of target volumes necessarily intruded into the right lung, the liver, and right kidney, limiting the degree of normal tissue sparing that could be achieved. The radiation doses to critical structures were acceptable and well tolerated. With intact lung, delivering a relatively high dose to the pleura with acceptable doses to surrounding normal tissues using respiratory gated pleural IMRT is feasible. Treatment delivery during a limited part of the respiratory cycle allows for reduced CT target volume motion errors, with reduction in the portion of the planning margin that accounts for respiratory motion, and subsequent increase in the therapeutic ratio.« less

Long lifetime near-infrared-emitting quantum dots for time-gated in vivo imaging of rare circulating cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fragola, Alexandra; Bouccara, Sophie; Pezet, Sophie; Lequeux, Nicolas; Loriette, Vincent; Pons, Thomas

2017-02-01

The in vivo detection of rare circulating cells using non invasive fluorescence imaging would provide a key tool to study migration of eg. tumoral or immunological cells. Fluorescence detection is however currently limited by a lack of contrast between the small emission of isolated, fast circulating cells and the strong autofluorescence background of the surrounding tissues. We present the development of near infrared emitting quantum dots (NIR-QDs) with long fluorescence lifetime for sensitive time-gated in vivo imaging of circulating cells. These QDs are composed of low toxicity ZnCuInSe/ZnS materials and made biocompatible using a novel multidentate imidazole zwitterionic block copolymer, ensuring their long term intracellular stability. Cells of interest can thus be labeled ex vivo with QDs, injected intravenously and imaged in the near infrared range. Excitation using a pulsed laser coupled to time-gated detection enables the efficient rejection of short lifetime (≈ ns) autofluorescence background and detection of long lifetime (≈ 150 ns) fluorescence from QD-labeled cells. We demonstrate efficient in vivo imaging of single fast-flowing cells, which opens opportunities for future biological studies. [1] M. Tasso et al, "Sulfobetaine-Vinylimidazole block copolymers: a robust quantum dot surface chemistry expanding bioimaging's horizons", ACS Nano, 9(11), 2015 [2] S. Bouccara et al, "Time-gated cell imaging using long lifetime near-infrared-emitting quantum dots for autofluorescence rejection", J Biomed Optc, 19(5), 2014

Agonist trapped in ATP-binding sites of the P2X2 receptor

PubMed Central

Jiang, Ruotian; Lemoine, Damien; Martz, Adeline; Taly, Antoine; Gonin, Sophie; Prado de Carvalho, Lia; Specht, Alexandre; Grutter, Thomas

2011-01-01

ATP-gated P2X receptors are trimeric ion channels, as recently confirmed by X-ray crystallography. However, the structure was solved without ATP and even though extracellular intersubunit cavities surrounded by conserved amino acid residues previously shown to be important for ATP function were proposed to house ATP, the localization of the ATP sites remains elusive. Here we localize the ATP-binding sites by creating, through a proximity-dependent “tethering” reaction, covalent bonds between a synthesized ATP-derived thiol-reactive P2X2 agonist (NCS-ATP) and single cysteine mutants engineered in the putative binding cavities of the P2X2 receptor. By combining whole-cell and single-channel recordings, we report that NCS-ATP covalently and specifically labels two previously unidentified positions N140 and L186 from two adjacent subunits separated by about 18 Å in a P2X2 closed state homology model, suggesting the existence of at least two binding modes. Tethering reaction at both positions primes subsequent agonist binding, yet with distinct functional consequences. Labeling of one position impedes subsequent ATP function, which results in inefficient gating, whereas tethering of the other position, although failing to produce gating by itself, enhances subsequent ATP function. Our results thus define a large and dynamic intersubunit ATP-binding pocket and suggest that receptors trapped in covalently agonist-bound states differ in their ability to gate the ion channel. PMID:21576497

The Effect of Temperature of Rocks on Microclimatic Conditions in Long Gate Roads and Galleries in Coal Mines

NASA Astrophysics Data System (ADS)

Cygankiewicz, Janusz; Knechtel, Józef

2014-03-01

The aim of this study was to examine the effect of the temperature of surrounding rocks on enthalpy and temperature of air flowing along several model mine workings. Long workings surrounded by non- -coal rocks as well longwall gates surrounded by coal were taken into consideration. Computer-aided simulation methods were used during the study. At greater depths the amount of moisture transferred into a mine working from the rock mass is two orders of magnitude smaller than the moisture that comes from external (technological) sources, mainly from coal extraction-related processes, therefore in the equation describing temperature changes only the terms representing the flux of heat from rocks were included. The model workings, for calculation purposes, were divided into sections, 50 m in length each. For each of the sections temperature of its ribs and temperature and stream of enthalpy of air flowing along it were calculated with the use of the finite differences method. For workings surrounded by non-coal rocks two variant calculations were carried out, namely with or without technological sources of heat. For coal surrounded workings (longwall gates) a new method for determination of heat from coal oxidation was developed, based on the findings by Cygankiewicz J. (2012a, 2012b). Using the results of a study by J.J. Drzewiecki and Smolka (1994), the effects of rock mass fracturing on transfer of heat into the air stream flowing along a working were taken into account. Badano wpływ temperatury pierwotnej skał na strumień entalpii oraz temperaturę powietrza w wyrobisku korytarzowym o długości 2000 m. Rozpatrywano wyrobiska kamienne oraz chodniki podścianowe. W badaniach zastosowano metodę symulacji komputerowych. Na dużych głębokościach wilgoć przenoszona z górotworu do wyrobiska jest dwa rzędy wielkości mniejsza od wilgoci pochodzącej od procesów technologicznych. W związku z powyższym w równaniu opisującym zmiany temperatury w masywie skalnym uwzględniono tylko człon reprezentujący ruch ciepła w skałach. Badane wyrobisko podzielono na odcinki o długości 50 m. Korzystając z metody różnic skończonych dla każdego z odcinków wyznaczono temperaturę ociosu, a następnie temperaturę i strumień entalpii powietrza. W odniesieniu do wyrobisk kamiennych rozważania przeprowadzono dla wariantu z technologicznymi źródłami ciepła oraz bez takich źródeł. Dla chodników węglowych przedstawiono nowy sposób określenia ciepła utleniania węgla, na podstawie wyników badań J. Cygankiewicza (2012a, 2012b). Korzystając z wyników badań J. Drzewieckiego i J. Smołki (1994), uwzględniono wpływ spękań górotworu na przenoszenie ciepła do powietrza w wyrobisku.

Vector magnetometer design study: Analysis of a triaxial fluxgate sensor design demonstrates that all MAGSAT Vector Magnetometer specifications can be met

NASA Technical Reports Server (NTRS)

Adams, D. F.; Hartmann, U. G.; Lazarow, L. L.; Maloy, J. O.; Mohler, G. W.

1976-01-01

The design of the vector magnetometer selected for analysis is capable of exceeding the required accuracy of 5 gamma per vector field component. The principal elements that assure this performance level are very low power dissipation triaxial feedback coils surrounding ring core flux-gates and temperature control of the critical components of two-loop feedback electronics. An analysis of the calibration problem points to the need for improved test facilities.

SPERTI Reactor Pit Building (PER605). Earth shielding protect adjacent Instrument ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

SPERT-I Reactor Pit Building (PER-605). Earth shielding protect adjacent Instrument Cell (PER-606). Security fencing surrounds complex, to which gate entry is provided next to Guard House (PER-607). Note gravel road leading to control area. Earth-covered conduit leads from instrument cell to terminal building out of view. Photographer: R.G. Larsen. Date: June 22, 1955. INEEL negative no. 55-1701 - Idaho National Engineering Laboratory, SPERT-I & Power Burst Facility Area, Scoville, Butte County, ID

Temporal and Spatial Pore Water Pressure Distribution Surrounding a Vertical Landfill Leachate Recirculation Well

PubMed Central

Kadambala, Ravi; Townsend, Timothy G.; Jain, Pradeep; Singh, Karamjit

2011-01-01

Addition of liquids into landfilled waste can result in an increase in pore water pressure, and this in turn may increase concerns with respect to geotechnical stability of the landfilled waste mass. While the impact of vertical well leachate recirculation on landfill pore water pressures has been mathematically modeled, measurements of these systems in operating landfills have not been reported. Pressure readings from vibrating wire piezometers placed in the waste surrounding a liquids addition well at a full-scale operating landfill in Florida were recorded over a 2-year period. Prior to the addition of liquids, measured pore pressures were found to increase with landfill depth, an indication of gas pressure increase and decreasing waste permeability with depth. When liquid addition commenced, piezometers located closer to either the leachate injection well or the landfill surface responded more rapidly to leachate addition relative to those far from the well and those at deeper locations. After liquid addition stopped, measured pore pressures did not immediately drop, but slowly decreased with time. Despite the large pressures present at the bottom of the liquid addition well, much smaller pressures were measured in the surrounding waste. The spatial variation of the pressures recorded in this study suggests that waste permeability is anisotropic and decreases with depth. PMID:21655145

Molecular Diversity of Cyanobacteria Inhabiting Coniform Structures and Surrounding Mat in a Yellowstone Hot Spring

NASA Astrophysics Data System (ADS)

Lau, Evan; Nash, Cody Z.; Vogler, Detlev R.; Cullings, K. W.

2005-02-01

Lithified coniform structures are common within cyanobacterial mats in Yellowstone National Park hot springs. It is unknown whether these structures and the mats from which they develop are inhabited by the same cyanobacterial populations. Denaturing gradient gel electrophoresis and sequencing and phylogenetic analysis of 16S rDNA was used to determine whether (1) three different morphological types of lithified coniform structures are inhabited by different cyanobacterial species, (2) these species are partitioned along a vertical gradient of these structures, and (3) lithified and non-lithified sections of mat are inhabited by different cyanobacterial species. Our results, based on multiple samplings, indicate that the cyanobacterial community compositions in the three lithified morphological types were identical and lacked any vertical differentiation. However, lithified and non-lithified portions of the same mat were inhabited by distinct and different populations of cyanobacteria. Cyanobacteria inhabiting lithified structures included at least one undefined Oscillatorialean taxon, which may represent the dominant cyanobacteria genus in lithified coniform stromatolites, Phormidium, three Synechococcus-like species, and two unknown cyanobacterial taxa. In contrast, the surrounding mats contained four closely related Synechococcus-like species. Our results indicate that the distribution of lithified coniform stromatolites may be dependent on the presence of one or more microorganisms, which are phylogenetically different from those inhabiting surrounding non-lithified mats.

Electro-optic characteristics of 4-domain vertical alignment nematic liquid crystal display with interdigital electrode

NASA Astrophysics Data System (ADS)

Hong, S. H.; Jeong, Y. H.; Kim, H. Y.; Cho, H. M.; Lee, W. G.; Lee, S. H.

2000-06-01

We have fabricated a vertically aligned 4-domain nematic liquid crystal display cell with thin film transistor. Unlike the conventional method constructing 4-domain, i.e., protrusion and surrounding electrode which needs additional processes, in this study the pixel design forming 4-domain with interdigital electrodes is suggested. In the device, one pixel is divided into two parts. One part has a horizontal electric field in the vertical direction and the other part has a horizontal one in the horizontal direction. Such fields in the horizontal and vertical direction drive the liquid crystal director to tilt down in four directions. In this article, the electro-optic characteristics of cells with 2 and 4 domain have been studied. The device with 4 domain shows faster response time than normal twisted-nematic and in-plane switching cells, wide viewing angle with optical compensation film, and more stable color characteristics than 2-domain vertical alignment cell with similar structure.

COLD TRAP

DOEpatents

Milleron, N.

1963-03-12

An improved linear-flow cold trap is designed for highvacuum applications such as mitigating back migration of diffusion pump oil moiecules. A central pot of liquid nitrogen is nested within and supported by a surrounding, vertical, helical coil of metai sheet, all enveloped by a larger, upright, cylindrical, vacuum vessel. The vertical interstices between successive turns of the coil afford lineal, axial, high-vacuum passages between open mouths at top and bottom of said vessel, while the coil, being cold by virtue of thermal contact of its innermost turn with the nitrogen pot, affords expansive proximate condensation surfaces. (AEC)

Cardiac-gated parametric images from 82 Rb PET from dynamic frames and direct 4D reconstruction.

PubMed

Germino, Mary; Carson, Richard E

2018-02-01

Cardiac perfusion PET data can be reconstructed as a dynamic sequence and kinetic modeling performed to quantify myocardial blood flow, or reconstructed as static gated images to quantify function. Parametric images from dynamic PET are conventionally not gated, to allow use of all events with lower noise. An alternative method for dynamic PET is to incorporate the kinetic model into the reconstruction algorithm itself, bypassing the generation of a time series of emission images and directly producing parametric images. So-called "direct reconstruction" can produce parametric images with lower noise than the conventional method because the noise distribution is more easily modeled in projection space than in image space. In this work, we develop direct reconstruction of cardiac-gated parametric images for 82 Rb PET with an extension of the Parametric Motion compensation OSEM List mode Algorithm for Resolution-recovery reconstruction for the one tissue model (PMOLAR-1T). PMOLAR-1T was extended to accommodate model terms to account for spillover from the left and right ventricles into the myocardium. The algorithm was evaluated on a 4D simulated 82 Rb dataset, including a perfusion defect, as well as a human 82 Rb list mode acquisition. The simulated list mode was subsampled into replicates, each with counts comparable to one gate of a gated acquisition. Parametric images were produced by the indirect (separate reconstructions and modeling) and direct methods for each of eight low-count and eight normal-count replicates of the simulated data, and each of eight cardiac gates for the human data. For the direct method, two initialization schemes were tested: uniform initialization, and initialization with the filtered iteration 1 result of the indirect method. For the human dataset, event-by-event respiratory motion compensation was included. The indirect and direct methods were compared for the simulated dataset in terms of bias and coefficient of variation as a function of iteration. Convergence of direct reconstruction was slow with uniform initialization; lower bias was achieved in fewer iterations by initializing with the filtered indirect iteration 1 images. For most parameters and regions evaluated, the direct method achieved the same or lower absolute bias at matched iteration as the indirect method, with 23%-65% lower noise. Additionally, the direct method gave better contrast between the perfusion defect and surrounding normal tissue than the indirect method. Gated parametric images from the human dataset had comparable relative performance of indirect and direct, in terms of mean parameter values per iteration. Changes in myocardial wall thickness and blood pool size across gates were readily visible in the gated parametric images, with higher contrast between myocardium and left ventricle blood pool in parametric images than gated SUV images. Direct reconstruction can produce parametric images with less noise than the indirect method, opening the potential utility of gated parametric imaging for perfusion PET. © 2017 American Association of Physicists in Medicine.

Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

DTIC Science & Technology

2016-08-19

in a dielectric matrix. This paper explores the electronic device applications of dense arrays of silicon nanowires that are embedded in Nanotechnology ... Nanotechnology 27 (2016) 295302 (11pp) doi:10.1088/0957-4484/27/29/295302 Original content from this work may be used under the terms of the Creative...compared 2 Nanotechnology 27 (2016) 295302 S A Guerrera and A I Akinwande to the device reported by Velasquez-Garcia et al, but it also reduces the

Development of a Distributed Nutrient Sub-Model (NSM Version 1.0) for Watersheds - Kinetic Process Descriptions

DTIC Science & Technology

2006-11-01

Broad Crested Weir 0.70 to 0.90 Sharp Crested Weir with Straight Slope Face 1.05 Sharp Crested Weir with Vertical Face 0.80 Sluice Gates with...Reaeration by turbulent flow over a dam Reaeration will occur when water falls over a dam, weir , or other structure in the stream. The amount of reaeration...Goulding. 1995. Phosphorus leaching from soils containing different phosphorus concentrations in the Broad - balk experiment. J. Environ. Qual. 24:904–910

Flexible, High-Speed CdSe Nanocrystal Integrated Circuits.

PubMed

Stinner, F Scott; Lai, Yuming; Straus, Daniel B; Diroll, Benjamin T; Kim, David K; Murray, Christopher B; Kagan, Cherie R

2015-10-14

We report large-area, flexible, high-speed analog and digital colloidal CdSe nanocrystal integrated circuits operating at low voltages. Using photolithography and a newly developed process to fabricate vertical interconnect access holes, we scale down device dimensions, reducing parasitic capacitances and increasing the frequency of circuit operation, and scale up device fabrication over 4 in. flexible substrates. We demonstrate amplifiers with ∼7 kHz bandwidth, ring oscillators with <10 μs stage delays, and NAND and NOR logic gates.

Measurement of vertical stability metrics in KSTAR

NASA Astrophysics Data System (ADS)

Hahn, Sang-Hee; Humphreys, D. A.; Mueller, D.; Bak, J. G.; Eidietis, N. W.; Kim, H.-S.; Ko, J. S.; Walker, M. L.; Kstar Team

2017-10-01

The paper summarizes results of multi-year ITPA experiments regarding measurement of the vertical stabilization capability of KSTAR discharges, including most recent measurements at the highest achievable elongation (κ 2.0 - 2.1). The measurements of the open-loop growth rate of VDE (γz) and the maximum controllable vertical displacement (ΔZmax) are done by the release-and-catch method. The dynamics of the vertical movement of the plasma is verified by both relevant magnetic reconstructions and non-magnetic diagnostics. The measurements of γz and ΔZmax were done for different plasma currents, βp, internal inductances, elongations and different configurations of the vessel conductors that surround the plasma as the first wall. Effects of control design choice and diagnostics noise are discussed, and comparison with the axisymmetric plasma response model is given for partial accounting for the measured control capability. This work supported by Ministry of Science, ICT, and Future Planning under KSTAR project.

High-Resolution Simulation of Hurricane Bonnie (1998). Part 1; The Organization of Vertical Motion

NASA Technical Reports Server (NTRS)

Braun, Scott A.; Montgomery, Michael T.; Pu, Zhaoxia

2003-01-01

Hurricanes are well known for their strong winds and heavy rainfall, particularly in the intense rainband (eyewall) surrounding the calmer eye of the storm. In some hurricanes, the rainfall is distributed evenly around the eye so that it has a donut shape on radar images. In other cases, the rainfall is concentrated on one side of the eyewall and nearly absent on the other side and is said to be asymmetric. This study examines how the vertical air motions that produce the rainfall are distributed within the eyewall of an asymmetric hurricane and the factors that cause this pattern of rainfall. We use a sophisticated numerical forecast model to simulate Hurricane Bonnie, which occurred in late August of 1998 during a special NASA field experiment designed to study hurricanes. The simulation results suggest that vertical wind shear (a rapid change in wind speed or direction with height) caused the asymmetric rainfall and vertical air motion patterns by tilting the hurricane vortex and favoring upward air motions in the direction of tilt. Although the rainfall in the hurricane eyewall may surround more than half of the eye, the updrafts that produce the rainfall are concentrated in very small-scale, intense updraft cores that occupy only about 10% of the eyewall area. The model simulation suggests that the timing and location of individual updraft cores are controlled by intense, small-scale vortices (regions of rapidly swirling flow) in the eyewall and that the updrafts form when the vortices encounter low-level air moving into the eyewall.

Finite element simulation of the gating mechanism of mechanosensitive ion channels

NASA Astrophysics Data System (ADS)

Bavi, Navid; Qin, Qinghua; Martinac, Boris

2013-08-01

In order to eliminate limitations of existing experimental or computational methods (such as patch-clamp technique or molecular dynamic analysis) a finite element (FE) model for multi length-scale and time-scale investigation on the gating mechanism of mechanosensitive (MS) ion channels has been established. Gating force value (from typical patch clamping values) needed to activate Prokaryotic MS ion channels was applied as tensional force to the FE model of the lipid bilayer. Making use of the FE results, we have discussed the effects of the geometrical and the material properties of the Escherichia coli MscL mechanosensitive ion channel opening in relation to the membrane's Young's modulus (which will vary depending on the cell type or cholesterol density in an artificial membrane surrounding the MscL ion channel). The FE model has shown that when the cell membrane stiffens the required channel activation force increases considerably. This is in agreement with experimental results taken from the literature. In addition, the present study quantifies the relationship between the membrane stress distribution around a `hole' for modeling purposes and the stress concentration in the place transmembrane proteins attached to the hole by applying an appropriate mesh refinement as well as well defining contact condition in these areas.

Recent advancements in 2D-materials interface based magnetic junctions for spintronics

NASA Astrophysics Data System (ADS)

Iqbal, Muhammad Zahir; Qureshi, Nabeel Anwar; Hussain, Ghulam

2018-07-01

Two-dimensional (2D) materials comprising of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs) have revealed fascinating properties in various spintronic architectures. Here, we review spin valve effect in lateral and vertical magnetic junctions incorporating 2D materials as non-magnetic layer between ferromagnetic (FM) electrodes. The magnetic field dependent spin transport properties are studied by measuring non-local resistance (RNL) and relative magnetoresistance ratio (MR) for lateral and vertical structures, respectively. The review consists of (i) studying spin lifetimes and spin diffusion length thereby exploring the effect of tunneling and transparent contacts in lateral spin valve structures, temperature dependence, gate tunability and contrasting mechanisms of spin relaxation in single layer graphene (SLG) and bilayer graphene (BLG) devices. (ii) Perpendicular spin valve devices are thoroughly investigated thereby studying the role of different 2D materials in vertical spin dynamics. The dependence of spin valve signal on interface quality, temperature and various other parameters is also investigated. Furthermore, the spin reversal in graphene-hBN hybrid system is examined on the basis of Julliere model.

Low voltage operation of GaN vertical nanowire MOSFET

NASA Astrophysics Data System (ADS)

Son, Dong-Hyeok; Jo, Young-Woo; Seo, Jae Hwa; Won, Chul-Ho; Im, Ki-Sik; Lee, Yong Soo; Jang, Hwan Soo; Kim, Dae-Hyun; Kang, In Man; Lee, Jung-Hee

2018-07-01

GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall wet etching in TMAH solution and photoresist etch-back process. The VNWMOSFET exhibited output characteristics with very low saturation drain voltage of less than 0.5 V, which is hardly observed from the wide bandgap-based devices. Simulation results indicated that the narrow diameter of the VNWMOSFET with relatively short channel length is responsible for the low voltage operation. The VNWMOSFET also demonstrated normally-off mode with threshold voltage (VTH) of 0.7 V, extremely low leakage current of ∼10-14 A, low drain-induced barrier lowering (DIBL) of 125 mV/V, and subthreshold swing (SS) of 66-122 mV/decade. The GaN GAA VNWMOSFET with narrow channel diameter investigated in this work would be promising for new low voltage logic application. He has been a Professor with the School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Korea, since 1993

Interlayer Coupling and Gate-Tunable Excitons in Transition Metal Dichalcogenide Heterostructures

DOE PAGES

Gao, Shiyuan; Yang, Li; Spataru, Catalin Dan

2017-11-22

Bilayer van der Waals (vdW) heterostructures such as MoS 2/WS 2 and MoSe 2/WSe 2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy excitonic state. In this work, we calculate the electronic and optical properties of such heterostructures with the first-principles GW+Bethe–Salpeter Equation (BSE) method and reveal the important role of interlayer coupling in deciding the excited-state properties, including the band alignment and excitonic properties. Our calculation shows that due to the interlayer coupling, the low energy excitons can be widely tuned by a vertical gatemore » field. In particular, the dipole oscillator strength and radiative lifetime of the lowest energy exciton in these bilayer heterostructures is varied by over an order of magnitude within a practical external gate field. We also build a simple model that captures the essential physics behind this tunability and allows the extension of the ab initio results to a large range of electric fields. In conclusion, our work clarifies the physical picture of interlayer excitons in bilayer vdW heterostructures and predicts a wide range of gate-tunable excited-state properties of 2D optoelectronic devices.« less

Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process.

PubMed

Daus, Alwin; Roldán-Carmona, Cristina; Domanski, Konrad; Knobelspies, Stefan; Cantarella, Giuseppe; Vogt, Christian; Grätzel, Michael; Nazeeruddin, Mohammad Khaja; Tröster, Gerhard

2018-06-01

Metal-halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light-emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift-off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal-halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin-film transistors (TFTs) with methyl-ammonium lead iodide (MAPbI 3 ) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI 3 (>1000) leads to excellent low-voltage TFT switching capabilities with subthreshold swings ≈80 mV decade -1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low-power Au-MAPbI 3 -Au photodetectors with close-to-ideal linear response (R 2 = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low-power integrated (opto-)electronic systems based on metal-halide perovskites. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Major Martian Volcanoes from MOLA - Alba Patera

NASA Technical Reports Server (NTRS)

2000-01-01

Two views of Alba Patera with topography draped over a Viking image mosaic. MOLA data have clarified the relationship between fault location and topography on and surrounding the Alba construct, providing insight into the volcanological and geophysical processes that shaped the edifice. The vertical exaggeration is 10:1.

Asynchronous Movements Prior to Pore Opening in NMDA Receptors

PubMed Central

Kazi, Rashek; Gan, Quan; Talukder, Iehab; Markowitz, Michael; Salussolia, Catherine L.

2013-01-01

Glutamate-gated ion channels embedded within the neuronal membrane are the primary mediators of fast excitatory synaptic transmission in the CNS. The ion channel of these glutamate receptors contains a pore-lining transmembrane M3 helix surrounded by peripheral M1 and M4 helices. In the NMDA receptor subtype, opening of the ion channel pore, mediated by displacement of the M3 helices away from the central pore axis, occurs in a highly concerted fashion, but the associated temporal movements of the peripheral helices are unknown. To address the gating dynamics of the peripheral helices, we constrained the relative movements of the linkers that connect these helices to the ligand-binding domain using engineered cross-links, either within (intra-GluN1 or GluN2A) or between subunits. Constraining the peripheral linkers in any manner dramatically curtailed channel opening, highlighting the requirement for rearrangements of these peripheral structural elements for efficient gating to occur. However, the magnitude of this gating effect depended on the specific subunit being constrained, with the most dramatic effects occurring when the constraint was between subunits. Based on kinetic and thermodynamic analysis, our results suggest an asynchrony in the displacement of the peripheral linkers during the conformational and energetic changes leading to pore opening. Initially there are large-scale rearrangements occurring between the four subunits. Subsequently, rearrangements occur within individual subunits, mainly GluN2A, leading up to or in concert with pore opening. Thus, the conformational changes induced by agonist binding in NMDA receptors converge asynchronously to permit pore opening. PMID:23864691

Effects of hydrologic modifications on salinity and formation of hypoxia in the Mississippi River-Gulf Outlet and adjacent waterways, southeastern Louisiana, 2008 to 2012

USGS Publications Warehouse

Swarzenski, Christopher M.; Mize, Scott V.

2014-01-01

The Mississippi River-Gulf Outlet (MRGO) was constructed between 1958 and 1968 to provide a safer and shorter route between the Gulf of Mexico and the Port of New Orleans for ocean-going vessels. In 2006, the U.S. Congress directed the U.S. Army Corps of Engineers (USACE) to develop and implement a plan to deauthorize a portion of the MRGO ship channel from its confluence with the Gulf Intracoastal Waterway to the Gulf of Mexico. In 2009, in accordance with plans submitted to Congress, the USACE built a rock barrier across the MRGO near Hopedale, Louisiana. Following Hurricane Katrina, Congress also authorized the USACE to implement the Hurricane Storm Damage Risk Reduction System (HSDRRS) by building structures in the MRGO and adjacent surface waters, to reduce vulnerability of this area to storm surge. The HSDRRS includes the Gulf Intracoastal Waterway-Lake Borgne Surge Barrier and Gate Complex near mile 58 of the deauthorized portion of the MRGO and the Seabrook Gate Complex on the Inner Harbor Navigation Canal (IHNC). By blocking or limiting tidal exchange in the MRGO, these barriers could affect water quality in the MRGO and nearby waters including Lake Pontchartrain, the IHNC, and Lake Borgne. In 2008, the U.S. Geological Survey, in cooperation with the USACE, began a study to document the effects of the construction activities on salinity and dissolved oxygen in these surface waters. Data were collected from August 2008 through October 2012. Completion of the rock barrier in the vicinity of mile 35 in July 2009 reduced hydrologic circulation and separated the MRGO into two distinct salinity regimes, with substantially fresher conditions prevailing upstream from the rock barrier. The rock barrier also contributed to a zone of hypoxia (dissolved oxygen less than 2 milligrams per liter) that formed along the channel bottom during the warmer summer months in each year of this monitoring; the zone was much more developed downstream from the rock barrier. The most extensive hypoxic zone was measured in October 2009 when it extended at least 34 miles in the MRGO, from mile 20 to mile 54. Construction of the surge barrier and flood gates did not affect salinity or dissolved oxygen in any comparable manner. The factors that contributed the most to hypoxia in the MRGO were the reductions in tidal water movement there after completion of the rock barrier combined with the channel depth in the MRGO, in places 10 to 30 feet deeper than surrounding surface water bodies. These factors helped to stratify salinity by reducing vertical mixing in the water column.

Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

NASA Astrophysics Data System (ADS)

Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

A molecular level prototype for mechanoelectrical transducer in mammalian hair cells

PubMed Central

Park, Jinkyoung

2013-01-01

The mechanoelectrical transducer (MET) is a crucial component of mammalian auditory system. The gating mechanism of the MET channel remains a puzzling issue, though there are many speculations, due to the lack of essential molecular building blocks. To understand the working principle of mammalian MET, we propose a molecular level prototype which constitutes a charged blocker, a realistic ion channel and its surrounding membrane. To validate the proposed prototype, we make use of a well-established ion channel theory, the Poisson-Nernst-Planck equations, for three-dimensional (3D) numerical simulations. A wide variety of model parameters, including bulk ion concentration, applied external voltage, blocker charge and blocker displacement, are explored to understand the basic function of the proposed MET prototype. We show that our prototype prediction of channel open probability in response to blocker relative displacement is in a remarkable accordance with experimental observation of rat cochlea outer hair cells. Our results appear to suggest that tip links which connect hair bundles gate MET channels. PMID:23625048

Optical observation of shock waves and cavitation bubbles in high intensity laser-induced shock processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marti-Lopez, L.; Ocana, R.; Porro, J. A.

2009-07-01

We report an experimental study of the temporal and spatial dynamics of shock waves, cavitation bubbles, and sound waves generated in water during laser shock processing by single Nd:YAG laser pulses of nanosecond duration. A fast ICCD camera (2 ns gate time) was employed to record false schlieren photographs, schlieren photographs, and Mach-Zehnder interferograms of the zone surrounding the laser spot site on the target, an aluminum alloy sample. We recorded hemispherical shock fronts, cylindrical shock fronts, plane shock fronts, cavitation bubbles, and phase disturbance tracks.

KSC-08pd1505

NASA Image and Video Library

2008-05-30

CAPE CANAVERAL, Fla. -- Bathed in lights surrounding Launch Pad 39A and its structures at NASA's Kennedy Space Center, space shuttle Discovery is poised for launch on the STS-124 mission after rollback of the rotating service structure. First motion was at 8:33 p.m. and rollback was complete at 9:07 p.m. The structure provides protected access to the shuttle for changeout and servicing of payloads at the pad. It is supported by a rotating bridge that pivots on a vertical axis on the west side of the pad's flame trench. After the RSS is rolled back, the orbiter is ready for fuel cell activation and external tank cryogenic propellant loading operations. The pad is cleared to the perimeter gate for operations to fill the external tank with about 500,000 gallons of cryogenic propellants used by the shuttle’s main engines. This is done at the pad approximately eight hours before the scheduled launch. Behind the shuttle is the orange external tank and the two solid rocket boosters (only one seen here). Beneath the shuttle's starboard wing is one of two tail service masts, which provide several umbilical connections to the orbiter, including a liquid-oxygen line through one and a liquid-hydrogen line through another. The STS-124 mission is the second of three flights launching components to complete the Japan Aerospace Exploration Agency's Kibo laboratory. The shuttle crew will install Kibo's large Japanese Pressurized Module and its remote manipulator system, or RMS. The 14-day flight includes three spacewalks. Launch is scheduled for 5:02 p.m. May 31. Photo credit: NASA/Troy Cryder

Quantum Vertex Model for Reversible Classical Computing

NASA Astrophysics Data System (ADS)

Chamon, Claudio; Mucciolo, Eduardo; Ruckenstein, Andrei; Yang, Zhicheng

We present a planar vertex model that encodes the result of a universal reversible classical computation in its ground state. The approach involves Boolean variables (spins) placed on links of a two-dimensional lattice, with vertices representing logic gates. Large short-ranged interactions between at most two spins implement the operation of each gate. The lattice is anisotropic with one direction corresponding to computational time, and with transverse boundaries storing the computation's input and output. The model displays no finite temperature phase transitions, including no glass transitions, independent of circuit. The computational complexity is encoded in the scaling of the relaxation rate into the ground state with the system size. We use thermal annealing and a novel and more efficient heuristic \\x9Dannealing with learning to study various computational problems. To explore faster relaxation routes, we construct an explicit mapping of the vertex model into the Chimera architecture of the D-Wave machine, initiating a novel approach to reversible classical computation based on quantum annealing.

An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance

NASA Astrophysics Data System (ADS)

Zhang, Da; Gao, Xindong; Chen, Si; Norström, Hans; Smith, Ulf; Solomon, Paul; Zhang, Shi-Li; Zhang, Zhen

2014-08-01

This work presents a proof-of-concept ion-sensitive device operating in electrolytes. The device, i.e., an ion-gated bipolar amplifier (IGBA), consists of a modified ion-sensitive field-effect transistor (ISFET) intimately integrated with a vertical bipolar junction transistor for immediate current amplification without introducing additional noise. With the current non-optimized design, the IGBA is already characterized by a 70-fold internal amplification of the ISFET output signal. This signal amplification is retained when the IGBA is used for monitoring pH variations. The tight integration significantly suppresses the interference of the IGBA signal by external noise, which leads to an improvement in signal-to-noise performance compared to its ISFET reference. The IGBA concept is especially suitable for biochips with millions of electric sensors that are connected to peripheral readout circuitry via extensive metallization which may in turn invite external interferences leading to contamination of the signal before it reaches the first external amplification stage.

Two-dimensional non-volatile programmable p-n junctions

NASA Astrophysics Data System (ADS)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Two-dimensional non-volatile programmable p-n junctions.

PubMed

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe 2 /hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 10 4 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Golden Gate Bridge response: a study with low-amplitude data from three earthquakes

USGS Publications Warehouse

Çelebi, Mehmet

2012-01-01

The dynamic response of the Golden Gate Bridge, located north of San Francisco, CA, has been studied previously using ambient vibration data and finite element models. Since permanent seismic instrumentation was installed in 1993, only small earthquakes that originated at distances varying between ~11 to 122 km have been recorded. Nonetheless, these records prompted this study of the response of the bridge to low amplitude shaking caused by three earthquakes. Compared to previous ambient vibration studies, the earthquake response data reveal a slightly higher fundamental frequency (shorter-period) for vertical vibration of the bridge deck center span (~7.7–8.3 s versus 8.2–10.6 s), and a much higher fundamental frequency (shorter period) for the transverse direction of the deck (~11.24–16.3 s versus ~18.2 s). In this study, it is also shown that these two periods are dominant apparent periods representing interaction between tower, cable, and deck.

Performance analysis of junctionless double gate VeSFET considering the effects of thermal variation - An explicit 2D analytical model

NASA Astrophysics Data System (ADS)

Chaudhary, Tarun; Khanna, Gargi

2017-03-01

The purpose of this paper is to explore junctionless double gate vertical slit field effect transistor (JLDG VeSFET) with reduced short channel effects and to develop an analytical threshold voltage model for the device considering the impact of thermal variations for the very first time. The model has been derived by solving 2D Poisson's equation and the effects of variation in temperature on various electrical parameters of the device such as Rout, drain current, mobility, subthreshold slope and DIBL has been studied and described in the paper. The model provides a deep physical insight of the device behavior and is also very helpful in contributing to the design space exploration for JLDG VeSFET. The proposed model is verified with simulative analysis at different radii of the device and it has been observed that there is a good agreement between the analytical model and simulation results.

Near-field control and imaging of free charge carrier variations in GaN nanowires

NASA Astrophysics Data System (ADS)

Berweger, Samuel; Blanchard, Paul T.; Brubaker, Matt D.; Coakley, Kevin J.; Sanford, Norman A.; Wallis, Thomas M.; Bertness, Kris A.; Kabos, Pavel

2016-02-01

Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here, we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW with strongly localized current when positioned over the wire vertices. These results suggest that the strong variations in electronic properties observed within NWs have significant implications for device design and may lead to new paths to optimization.

2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET

NASA Astrophysics Data System (ADS)

Saha, Priyanka; Banerjee, Pritha; Sarkar, Subir Kumar

2018-06-01

The paper aims to develop two dimensional analytical model of the proposed dual material (DM) Vertical Super Thin Body (VSTB) strained Field Effect Transistor (FET) with focus on its short channel behaviour in nanometer regime. Electrostatic potential across gate/channel and dielectric wall/channel interface is derived by solving 2D Poisson's equation with parabolic approximation method by applying appropriate boundary conditions. Threshold voltage is then calculated by using the criteria of minimum surface potential considering both gate and dielectric wall side potential. Performance analysis of the present structure is demonstrated in terms of potential, electric field, threshold voltage characteristics and subthreshold behaviour by varying various device parameters and applied biases. Effect of application of strain in channel is further explored to establish the superiority of the proposed device in comparison to conventional VSTB FET counterpart. All analytical results are compared with Silvaco ATLAS device simulated data to substantiate the accuracy of our derived model.

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

PubMed

Zhou, Ruiping; Ostwal, Vaibhav; Appenzeller, Joerg

2017-08-09

The key appeal of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene for electronic applications certainly lies in their atomically thin nature that offers opportunities for devices beyond conventional transistors. It is also this property that makes them naturally suited for a type of integration that is not possible with any three-dimensional (3D) material, that is, forming heterostructures by stacking dissimilar 2D materials together. Recently, a number of research groups have reported on the formation of atomically sharp p/n-junctions in various 2D heterostructures that show strong diode-type rectification. In this article, we will show that truly vertical heterostructures do exhibit much smaller rectification ratios and that the reported results on atomically sharp p/n-junctions can be readily understood within the framework of the gate and drain voltage response of Schottky barriers that are involved in the lateral transport.

Removing the current-limit of vertical organic field effect transistors

NASA Astrophysics Data System (ADS)

Sheleg, Gil; Greenman, Michael; Lussem, Bjorn; Tessler, Nir

2017-11-01

The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm-2 for a semiconductor having a mobility value of 0.1 cm2 V-1 s-1.

Infrared radiative properties of tropical cirrus clouds inferred with aircraft measurements

NASA Technical Reports Server (NTRS)

Griffith, K. T.; Cox, S. K.; Knollenberg, R. G.

1980-01-01

Longwave emissivities and the vertical profile of cooling rates of tropical cirrus clouds are determined using broadband hemispheric irradiance data. Additionally, a broadband mass absorption coefficient is defined and used to relate emissivity to water content. The data used were collected by the National Center for Atmospheric Research (NCAR) Sabreliner during the GARP Atlantic Tropical Experiment (GATE) in the summer of 1974. Three case studies are analyzed showing that these tropical cirrus clouds approached an emissivity of 1.0 within a vertical distance of 1.0 km. Broadband mass absorption coefficients ranging from 0.076 to 0.096 sq m per g are derived. A comparison of these results with other work suggests that tropical cirrus cloud emissivities may be significantly larger than heretofore believed. Ice water content of the clouds were deduced from data collected by a one-dimensional particle spectrometer. Analyses of the ice water content and the observed particle size distributions are presented.

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

PubMed

Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

2014-01-21

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanna, A. N.; Ghoneim, M. T.; Bahabry, R. R.

2013-11-25

We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.

Cyanobacterial Community Structure In Lithifying Mats of A Yellowstone Hotspring-Implications for Precambrian Stromatolite Biocomplexity

NASA Technical Reports Server (NTRS)

Lau, Evan; Nash, C. Z.; Vogler, D. R.; Cullings, K.; DeVincenzi, Donald (Technical Monitor)

2002-01-01

Denaturing Gradient Gel Electrophoresis (DGGE) of partial 16S rRNA gene sequences was used to investigate the molecular biodiversity of cyanobacterial communities inhabiting various lithified morpho-structures in two hotsprings of Yellowstone National Park. These morpho-structures - flat-topped columns, columnar cones, and ridged cones - resemble ancient stromatolites, which are possibly biogenic in origin. The top, middle and bottom sections of these lithified morpho-structures, as well as surrounding non-lithified mats were analyzed to determine the vertical and spatial distribution of cyanobacterial communities. Results from DGGE indicate that the cyanobacterial community composition of lithified morpho-structures (flat-topped columns, columnar cones, and ridged cones) were largely similar in vertical distribution as well as among the morpho-structures being studied. Preliminary results indicate that the cyanobacterial communities in these lithified morpho-structures were significantly different from communities in surrounding non-lithified mats. These results provide additional support to the theory that certain Phormidium/Leptolyngbya species are involved in the morphogenesis of lithifying morpho-structures in hotsprings and may have played a role in the formation of ancient stromatolites.

Model of vertical plasma motion during the current quench

NASA Astrophysics Data System (ADS)

Breizman, Boris; Kiramov, Dmitrii

2017-10-01

Tokamak disruptions impair plasma position control, which allows the plasma column to move and hit the wall. These detrimental events enhance thermal and mechanical loads due to halo currents and runaway electron losses. Their fundamental understanding and prevention is one of the high-priority items for ITER. As commonly observed in experiments, the disruptive plasma tends to move vertically, and the timescale of this motion is rather resistive than Alfvenic. These observations suggest that the plasma column is nearly force-free during its vertical motion. In fact, the force-free constraint is already used in disruption simulators. In this work, we consider a geometrically simple system that mimics the tokamak plasma surrounded by the conducting structures. Using this model, we highlight the underlying mechanism of the vertical displacement events during the current quench phase of plasma disruption. We also address a question of ideal MHD stability of the plasma during its resistive motion. Work supported by the U.S. Department of Energy Contracts DEFG02-04ER54742 and DE-SC0016283.

Vertical resolution of baroclinic modes in global ocean models

NASA Astrophysics Data System (ADS)

Stewart, K. D.; Hogg, A. McC.; Griffies, S. M.; Heerdegen, A. P.; Ward, M. L.; Spence, P.; England, M. H.

2017-05-01

Improvements in the horizontal resolution of global ocean models, motivated by the horizontal resolution requirements for specific flow features, has advanced modelling capabilities into the dynamical regime dominated by mesoscale variability. In contrast, the choice of the vertical grid remains a subjective choice, and it is not clear that efforts to improve vertical resolution adequately support their horizontal counterparts. Indeed, considering that the bulk of the vertical ocean dynamics (including convection) are parameterized, it is not immediately obvious what the vertical grid is supposed to resolve. Here, we propose that the primary purpose of the vertical grid in a hydrostatic ocean model is to resolve the vertical structure of horizontal flows, rather than to resolve vertical motion. With this principle we construct vertical grids based on their abilities to represent baroclinic modal structures commensurate with the theoretical capabilities of a given horizontal grid. This approach is designed to ensure that the vertical grids of global ocean models complement (and, importantly, to not undermine) the resolution capabilities of the horizontal grid. We find that for z-coordinate global ocean models, at least 50 well-positioned vertical levels are required to resolve the first baroclinic mode, with an additional 25 levels per subsequent mode. High-resolution ocean-sea ice simulations are used to illustrate some of the dynamical enhancements gained by improving the vertical resolution of a 1/10° global ocean model. These enhancements include substantial increases in the sea surface height variance (∼30% increase south of 40°S), the barotropic and baroclinic eddy kinetic energies (up to 200% increase on and surrounding the Antarctic continental shelf and slopes), and the overturning streamfunction in potential density space (near-tripling of the Antarctic Bottom Water cell at 65°S).

Preliminary Findings of Inflight Icing Field Test to Support Icing Remote Sensing Technology Assessment

NASA Technical Reports Server (NTRS)

King, Michael; Reehorst, Andrew; Serke, Dave

2015-01-01

NASA and the National Center for Atmospheric Research have developed an icing remote sensing technology that has demonstrated skill at detecting and classifying icing hazards in a vertical column above an instrumented ground station. This technology has recently been extended to provide volumetric coverage surrounding an airport. Building on the existing vertical pointing system, the new method for providing volumetric coverage will utilize a vertical pointing cloud radar, a multifrequency microwave radiometer with azimuth and elevation pointing, and a NEXRAD radar. The new terminal area icing remote sensing system processes the data streams from these instruments to derive temperature, liquid water content, and cloud droplet size for each examined point in space. These data are then combined to ultimately provide icing hazard classification along defined approach paths into an airport.

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

Vertical stiffness is not related to anterior cruciate ligament elongation in professional rugby union players.

PubMed

Serpell, Benjamin G; Scarvell, Jennie M; Pickering, Mark R; Ball, Nick B; Perriman, Diana; Warmenhoven, John; Smith, Paul N

2016-01-01

Novel research surrounding anterior cruciate ligament (ACL) injury is necessary because ACL injury rates have remained unchanged for several decades. An area of ACL risk mitigation which has not been well researched relates to vertical stiffness. The relationship between increased vertical stiffness and increased ground reaction force suggests that vertical stiffness may be related to ACL injury risk. However, given that increased dynamic knee joint stability has been shown to be associated with vertical stiffness, it is possible that modification of vertical stiffness could help to protect against injury. We aimed to determine whether vertical stiffness is related to measures known to load, or which represent loading of, the ACL. This was a cross-sectional observational study of 11 professional Australian rugby players. Knee kinematics and ACL elongation were measured from a 4-dimensional model of a hopping task which simulated the change of direction manoeuvre typically observed when non-contact ACL injury occurs. The model was generated from a CT scan of the participant's knee registered frame by frame to fluoroscopy images of the hopping task. Vertical stiffness was calculated from force plate data. There was no association found between vertical stiffness and anterior tibial translation (ATT) or ACL elongation (r=-0.05; p=0.89, and r=-0.07; p=0.83, respectively). ATT was related to ACL elongation (r=0.93; p=0.0001). Vertical stiffness was not associated with ACL loading in this cohort of elite rugby players but a novel method for measuring ACL elongation in vivo was found to have good construct validity.

Hysteresis-Free Carbon Nanotube Field-Effect Transistors.

PubMed

Park, Rebecca S; Hills, Gage; Sohn, Joon; Mitra, Subhasish; Shulaker, Max M; Wong, H-S Philip

2017-05-23

While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance and energy-efficient digital systems, large hysteresis degrades these potential CNFET benefits. As hysteresis is caused by traps surrounding the CNTs, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis. Our previous findings on the sources and physics of hysteresis in CNFETs enabled us to understand the influence of gate dielectric scaling on hysteresis. To begin with, we validate through simulations how scaling the gate dielectric thickness results in greater-than-expected benefits in reducing hysteresis. Leveraging this insight, we experimentally demonstrate reducing hysteresis to <0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even with negligible hysteresis, large subthreshold swing is still observed in the CNFETs with multiple CNTs per transistor. We show that the cause of large subthreshold swing is due to threshold voltage variation between individual CNTs. We also show that the source of this threshold voltage variation is not explained solely by variations in CNT diameters (as is often ascribed). Rather, other factors unrelated to the CNTs themselves (i.e., process variations, random fixed charges at interfaces) are a significant factor in CNT threshold voltage variations and thus need to be further improved.

Two separate interfaces between the voltage sensor and pore are required for the function of voltage-dependent K(+) channels.

PubMed

Lee, Seok-Yong; Banerjee, Anirban; MacKinnon, Roderick

2009-03-03

Voltage-dependent K(+) (Kv) channels gate open in response to the membrane voltage. To further our understanding of how cell membrane voltage regulates the opening of a Kv channel, we have studied the protein interfaces that attach the voltage-sensor domains to the pore. In the crystal structure, three physical interfaces exist. Only two of these consist of amino acids that are co-evolved across the interface between voltage sensor and pore according to statistical coupling analysis of 360 Kv channel sequences. A first co-evolved interface is formed by the S4-S5 linkers (one from each of four voltage sensors), which form a cuff surrounding the S6-lined pore opening at the intracellular surface. The crystal structure and published mutational studies support the hypothesis that the S4-S5 linkers convert voltage-sensor motions directly into gate opening and closing. A second co-evolved interface forms a small contact surface between S1 of the voltage sensor and the pore helix near the extracellular surface. We demonstrate through mutagenesis that this interface is necessary for the function and/or structure of two different Kv channels. This second interface is well positioned to act as a second anchor point between the voltage sensor and the pore, thus allowing efficient transmission of conformational changes to the pore's gate.

1D-3D coupling for hydraulic system transient simulations

NASA Astrophysics Data System (ADS)

Wang, Chao; Nilsson, Håkan; Yang, Jiandong; Petit, Olivier

2017-01-01

This work describes a coupling between the 1D method of characteristics (MOC) and the 3D finite volume method of computational fluid dynamics (CFD). The coupling method is applied to compressible flow in hydraulic systems. The MOC code is implemented as a set of boundary conditions in the OpenFOAM open source CFD software. The coupling is realized by two linear equations originating from the characteristics equation and the Riemann constant equation, respectively. The coupling method is validated using three simple water hammer cases and several coupling configurations. The accuracy and robustness are investigated with respect to the mesh size ratio across the interface, and 3D flow features close to the interface. The method is finally applied to the transient flow caused by the closing and opening of a knife valve (gate) in a pipe, where the flow is driven by the difference in free surface elevation between two tanks. A small region surrounding the moving gate is resolved by CFD, using a dynamic mesh library, while the rest of the system is modeled by MOC. Minor losses are included in the 1D region, corresponding to the contraction of the flow from the upstream tank into the pipe, a separate stationary flow regulation valve, and a pipe bend. The results are validated with experimental data. A 1D solution is provided for comparison, using the static gate characteristics obtained from steady-state CFD simulations.

Large Eddy Simulation of a Forced Round Turbulent Buoyant Plume in Neutral Surroundings

NASA Technical Reports Server (NTRS)

Basu, A. J.; Mansour, N. N.; Koga, Dennis (Technical Monitor)

1999-01-01

Buoyant flows play an important role in various technological and environmental issues. For example, dispersal of pollutants, smoke, or volcano exhaust in the atmosphere, vertical motion of air, formation of clouds and other weather systems, and flows in cooling towers and fires are all determined primarily by buoyancy effects. The buoyancy force in such flows can originate from either a heat source or due to different densities between a fluid and its surroundings. Whatever the cause, the flow can be understood by studying the effects of the tight coupling between the thermal and the velocity fields since density differences can be characterized as temperature differences.

Cusps enable line attractors for neural computation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Zhuocheng; Zhang, Jiwei; Sornborger, Andrew T.

Here, line attractors in neuronal networks have been suggested to be the basis of many brain functions, such as working memory, oculomotor control, head movement, locomotion, and sensory processing. In this paper, we make the connection between line attractors and pulse gating in feed-forward neuronal networks. In this context, because of their neutral stability along a one-dimensional manifold, line attractors are associated with a time-translational invariance that allows graded information to be propagated from one neuronal population to the next. To understand how pulse-gating manifests itself in a high-dimensional, nonlinear, feedforward integrate-and-fire network, we use a Fokker-Planck approach to analyzemore » system dynamics. We make a connection between pulse-gated propagation in the Fokker-Planck and population-averaged mean-field (firing rate) models, and then identify an approximate line attractor in state space as the essential structure underlying graded information propagation. An analysis of the line attractor shows that it consists of three fixed points: a central saddle with an unstable manifold along the line and stable manifolds orthogonal to the line, which is surrounded on either side by stable fixed points. Along the manifold defined by the fixed points, slow dynamics give rise to a ghost. We show that this line attractor arises at a cusp catastrophe, where a fold bifurcation develops as a function of synaptic noise; and that the ghost dynamics near the fold of the cusp underly the robustness of the line attractor. Understanding the dynamical aspects of this cusp catastrophe allows us to show how line attractors can persist in biologically realistic neuronal networks and how the interplay of pulse gating, synaptic coupling, and neuronal stochasticity can be used to enable attracting one-dimensional manifolds and, thus, dynamically control the processing of graded information.« less

Cusps enable line attractors for neural computation

NASA Astrophysics Data System (ADS)

Xiao, Zhuocheng; Zhang, Jiwei; Sornborger, Andrew T.; Tao, Louis

2017-11-01

Line attractors in neuronal networks have been suggested to be the basis of many brain functions, such as working memory, oculomotor control, head movement, locomotion, and sensory processing. In this paper, we make the connection between line attractors and pulse gating in feed-forward neuronal networks. In this context, because of their neutral stability along a one-dimensional manifold, line attractors are associated with a time-translational invariance that allows graded information to be propagated from one neuronal population to the next. To understand how pulse-gating manifests itself in a high-dimensional, nonlinear, feedforward integrate-and-fire network, we use a Fokker-Planck approach to analyze system dynamics. We make a connection between pulse-gated propagation in the Fokker-Planck and population-averaged mean-field (firing rate) models, and then identify an approximate line attractor in state space as the essential structure underlying graded information propagation. An analysis of the line attractor shows that it consists of three fixed points: a central saddle with an unstable manifold along the line and stable manifolds orthogonal to the line, which is surrounded on either side by stable fixed points. Along the manifold defined by the fixed points, slow dynamics give rise to a ghost. We show that this line attractor arises at a cusp catastrophe, where a fold bifurcation develops as a function of synaptic noise; and that the ghost dynamics near the fold of the cusp underly the robustness of the line attractor. Understanding the dynamical aspects of this cusp catastrophe allows us to show how line attractors can persist in biologically realistic neuronal networks and how the interplay of pulse gating, synaptic coupling, and neuronal stochasticity can be used to enable attracting one-dimensional manifolds and, thus, dynamically control the processing of graded information.

Cusps enable line attractors for neural computation

DOE PAGES

Xiao, Zhuocheng; Zhang, Jiwei; Sornborger, Andrew T.; ...

2017-11-07

Here, line attractors in neuronal networks have been suggested to be the basis of many brain functions, such as working memory, oculomotor control, head movement, locomotion, and sensory processing. In this paper, we make the connection between line attractors and pulse gating in feed-forward neuronal networks. In this context, because of their neutral stability along a one-dimensional manifold, line attractors are associated with a time-translational invariance that allows graded information to be propagated from one neuronal population to the next. To understand how pulse-gating manifests itself in a high-dimensional, nonlinear, feedforward integrate-and-fire network, we use a Fokker-Planck approach to analyzemore » system dynamics. We make a connection between pulse-gated propagation in the Fokker-Planck and population-averaged mean-field (firing rate) models, and then identify an approximate line attractor in state space as the essential structure underlying graded information propagation. An analysis of the line attractor shows that it consists of three fixed points: a central saddle with an unstable manifold along the line and stable manifolds orthogonal to the line, which is surrounded on either side by stable fixed points. Along the manifold defined by the fixed points, slow dynamics give rise to a ghost. We show that this line attractor arises at a cusp catastrophe, where a fold bifurcation develops as a function of synaptic noise; and that the ghost dynamics near the fold of the cusp underly the robustness of the line attractor. Understanding the dynamical aspects of this cusp catastrophe allows us to show how line attractors can persist in biologically realistic neuronal networks and how the interplay of pulse gating, synaptic coupling, and neuronal stochasticity can be used to enable attracting one-dimensional manifolds and, thus, dynamically control the processing of graded information.« less

Organic transistors making use of room temperature ionic liquids as gating medium

NASA Astrophysics Data System (ADS)

Hoyos, Jonathan Javier Sayago

The ability to couple ionic and electronic transport in organic transistors, based on pi conjugated organic materials for the transistor channel, can be particularly interesting to achieve low voltage transistor operation, i.e. below 1 V. The operation voltage in typical organic transistors based on conventional dielectrics (200 nm thick SiO2) is commonly higher than 10 V. Electrolyte-gated (EG) transistors, i.e. employing an electrolyte as the gating medium, permit current modulations of several orders of magnitude at relatively low gate voltages thanks to the exceptionally high capacitance at the electrolyte/transistor channel interface, in turn due to the low thickness (ca. 3 nm) of the electrical double layers forming at the electrolyte/semiconductor interface. Electrolytes based on room temperature ionic liquids (RTILs) are promising in EG transistor applications for their high electrochemical stability and good ionic conductivity. The main motivation behind this work is to achieve low voltage operation in organic transistors by making use of RTILs as gating medium. First we demonstrate the importance of the gate electrode material in the EG transistor performance. The use of high surface area carbon gate electrodes limits undesirable electrochemical processes and renders unnecessary the presence of a reference electrode to monitor the channel potential. This was demonstrated using activated carbon as gate electrode, the electronic conducting polymer MEH-PPV, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] channel material, and the ionic liquid [EMIM][TFSI] (1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), as gating medium. Using high surface area gate electrodes resulted in sub-1 V operation and charge carrier mobilities of (1.0 +/- 0.5) x 10-2 cm2V -1s-1. A challenge in the field of EG transistors is to decrease their response time, a consequence of the slow ion redistribution in the transistor channel upon application of electric biases. We systematically investigated EG transistors employing RTILs belonging to the same family, i.e. based on a common anion and different cations. The transistor characteristics showed a limited cation influence in establishing the p-type doping of the conducting polymer. Interestingly, we observed that the transistor response time depends on at least two processes: the redistribution of ions from the electrolyte into the transistor channel, affecting the gate-source current (I gs); and the redistribution of charges in the transistor channel, affecting the drain-source current (Ids), as a function of time. The two processes have different rates, with the latter being the slowest. Incorporating propylene carbonate in the electrolyte proved to be an effective solution to increase the ionic conductivity, to lower the viscosity and, consequently, to reduce the transistor response time. Finally, we were able to demonstrate a multifunctional device integrating the transistor logic function with that of energy storage in a supercapacitor: the TransCap. The polymer/electrolyte/carbon vertical stacking of the EG transistor features the cell configuration of a hybrid supercapacitor. Supercapacitors are high specific power systems that, for their ability to store/deliver charge within short times may outperform batteries in applications having high power demand. When the TransCap is ON (open transistor channel), the polymer and the carbon gate electrodes store charge (Q) at a given Vgs, hence the stored energy equals Q˙V gs. When the TransCap is switched OFF, the channel and the gate are discharged and the energy can be delivered back to power other electronic components. EG transistors, making use of activated carbon as gate electrode and different RTILs as well as RTIL solvent mixtures as electrolyte gating medium, are interesting towards low voltage printable electronics. The high capacitance at the interface between the electrolyte and the transistor channel enables energy storage within the EG transistor architecture.

Measurement of the gravity-field curvature by atom interferometry.

PubMed

Rosi, G; Cacciapuoti, L; Sorrentino, F; Menchetti, M; Prevedelli, M; Tino, G M

2015-01-09

We present the first direct measurement of the gravity-field curvature based on three conjugated atom interferometers. Three atomic clouds launched in the vertical direction are simultaneously interrogated by the same atom interferometry sequence and used to probe the gravity field at three equally spaced positions. The vertical component of the gravity-field curvature generated by nearby source masses is measured from the difference between adjacent gravity gradient values. Curvature measurements are of interest in geodesy studies and for the validation of gravitational models of the surrounding environment. The possibility of using such a scheme for a new determination of the Newtonian constant of gravity is also discussed.

Stress state estimation in multilayer support of vertical shafts, considering off-design cross-sectional deformation

NASA Astrophysics Data System (ADS)

Antsiferov, SV; Sammal, AS; Deev, PV

2018-03-01

To determine the stress-strain state of multilayer support of vertical shafts, including cross-sectional deformation of the tubing rings as against the design, the authors propose an analytical method based on the provision of the mechanics of underground structures and surrounding rock mass as the elements of an integrated deformable system. The method involves a rigorous solution of the corresponding problem of elasticity, obtained using the mathematical apparatus of the theory of analytic functions of a complex variable. The design method is implemented as a software program allowing multivariate applied computation. Examples of the calculation are given.

Submersible sodium pump

DOEpatents

Brynsvold, Glen V.; Lopez, John T.; Olich, Eugene E.; West, Calvin W.

1989-01-01

An electromagnetic submerged pump has an outer cylindrical stator with an inner cylindrical conductive core for the submerged pumping of sodium in the cylindrical interstitial volume defined between the stator and core. The cylindrical interstitial volume is typically vertically oriented, and defines an inlet at the bottom and an outlet at the top. The outer stator generates upwardly conveyed toroidal magnetic fields, which fields convey preferably from the bottom of the pump to the top of the pump liquid sodium in the cold leg of a sodium cooled nuclear reactor. The outer cylindrical stator has a vertically disposed duct surrounded by alternately stacked layers of coil units and laminates.

Submersible sodium pump

DOEpatents

Brynsvold, G.V.; Lopez, J.T.; Olich, E.E.; West, C.W.

1989-11-21

An electromagnetic submerged pump has an outer cylindrical stator with an inner cylindrical conductive core for the submerged pumping of sodium in the cylindrical interstitial volume defined between the stator and core. The cylindrical interstitial volume is typically vertically oriented, and defines an inlet at the bottom and an outlet at the top. The outer stator generates upwardly conveyed toroidal magnetic fields, which fields convey preferably from the bottom of the pump to the top of the pump liquid sodium in the cold leg of a sodium cooled nuclear reactor. The outer cylindrical stator has a vertically disposed duct surrounded by alternately stacked layers of coil units and laminates. 14 figs.

SU-E-P-25: Evaluation of Motion in Pancreas SBRT Treatment Deliveries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, L; Halvorsen, P

2015-06-15

Purpose: Stereotactic Body Radiation Therapy (SBRT) procedures for pancreatic cancer present a challenge in motion management because the target is directly adjacent to critical structures and the target is subject to significant respiratory motion. Gated treatment is usually planned with a tight (few mm) PTV margin. The positioning and setup relies on on-board-imaging (OBI) of internal fiducials. This study evaluates the corrections for inter- and intra-fractional target motion as evidenced by the OBI. Methods: 20 patients with gated pancreas SBRT treatment were setup with KV imaging guidance before and during each treatment. The couch position was fine-tuned to align withmore » the internal fiducials for each patient. The data for 148 intra- and 111 inter-fractional couch movements were captured and analyzed. Results: The mean ± standard deviation of couch shifts for the initial daily setup is 4.9±4.1 mm for couch vertical, 5.3±4.6 mm for couch longitudinal, and 3.7±4.0 mm for couch lateral. The mean ± standard deviation of intra-treatment adjustments are 1.1±1.6, 2.5±3.8, and 1.1±1.8 mm for couch vertical, longitudinal and lateral. The probability of intra-fractional motion in the three orthogonal directions with magnitude no more than 2 mm, 3 mm and 5 mm is 55%, 68% and 84% respectively. Conclusion: The intra-treatment target motion for pancreas SBRT patients indicates that a PTV margin of 5mm may be necessary.« less

Precipitation processes developed during TOGA COARE (1992), GATE (1974), SCSMEX (1998), and KWAJEX (1999): 3D Cloud Resolving Model Simulation

NASA Technical Reports Server (NTRS)

Tao, W.-K.

2006-01-01

Real clouds and cloud systems are inherently three-dimensional (3D). Because of the limitations in computer resources, however, most cloud-resolving models (CRMs) today are still two-dimensional (2D). A few 3D CRMs have been used to study the response of clouds to large-scale forcing. In these 3D simulations, the model domain was small, and the integration time was 6 hours. Only recently have 3D experiments been performed for multi-day periods for tropical cloud systems with large horizontal domains at the National Center for Atmospheric Research (NCAR), NOAA GFDL, the U.K. Met. Office, Colorado State University and NASA Goddard Space Flight Center. An improved 3D Goddard Cumulus Ensemble (GCE) model was recently used to simulate periods during TOGA COARE (December 19-27, 1992), GATE (september 1-7, 1974), SCSMEX (May 18-26, June 2-11, 1998) and KWAJEX (August 7-13, August 18-21, and August 29-September 12, 1999) using a 512 by 512 km domain and 41 vertical layers. The major objectives of this paper are: (1) to identify the differences and similarities in the simulated precipitation processes and their associated surface and water energy budgets in TOGA COARE, GATE, KWAJEX, and SCSMEX, and (2) to asses the impact of microphysics, radiation budget and surface fluxes on the organization of convection in tropics.

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

PubMed

Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

2015-08-12

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics.

PubMed

Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

2018-01-26

The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe 2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO 2 /Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe 2 -MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe 2 -MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W -1 , 0.85 × 10 8 Jones, and 1665.6%, respectively, at V ds  = 5 V with the light wavelength of 254 nm under 0.29 mW cm -2 . These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

Loss analysis and optimum design of a highly efficient and compact CMOS DC–DC converter with novel transistor layout using 60 nm multipillar-type vertical body channel MOSFET

NASA Astrophysics Data System (ADS)

Itoh, Kazuki; Endoh, Tetsuo

2018-04-01

In this paper, we present a novel transistor layout of multi pillar-type vertical body-channel (BC) MOSFET for cascode power switches for improving the efficiency and compactness of CMOS DC–DC converters. The proposed layout features a stacked and multifingered layout to suppress the loss due to parasitic components such as diffusion resistance and contact resistance. In addition, the loss of each MOSFET, which configures cascode power switches, is analyzed, and it is revealed that the total optimum gate width and loss with the high-side (HS) n-type MOSFET topology are 27 and 16% smaller than those with the HS p-type MOSFET topology, respectively. Moreover, a circuit simulation of 2.0 to 0.8 V, 100 MHz CMOS DC–DC converters with the proposed layout is carried out by using experimentally extracted models of BSIM4 60 nm vertical BC MOSFETs. The peak efficiency of the HS n-type MOSFET converter with the proposed layout is 90.1%, which is 6.0% higher than that with the conventional layout.

Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics

NASA Astrophysics Data System (ADS)

Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

2018-01-01

The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ˜8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

NASA Astrophysics Data System (ADS)

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas

2017-03-01

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.

PubMed

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Wasisto, Hutomo Suryo; Waag, Andreas

2017-03-03

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Effects of vertical positioning on gas exchange and lung volumes in acute respiratory distress syndrome.

PubMed

Richard, Jean-Christophe M; Maggiore, Salvatore Maurizio; Mancebo, Jordi; Lemaire, François; Jonson, Bjorn; Brochard, Laurent

2006-10-01

Supine position may contribute to the loss of aerated lung volume in patients with acute respiratory distress syndrome (ARDS). We hypothesized that verticalization increases lung volume and improves gas exchange by reducing the pressure surrounding lung bases. Prospective observational physiological study in a medical ICU. In 16 patients with ARDS we measured arterial blood gases, pressure-volume curves of the respiratory system recorded from positive-end expiratory pressure (PEEP), and changes in lung volume in supine and vertical positions (trunk elevated at 45 degrees and legs down at 45 degrees ). Vertical positioning increased PaO(2) significantly from 94+/-33 to 142+/-49 mmHg, with an increase higher than 40% in 11 responders. The volume at 20 cmH(2)O measured on the PV curve from PEEP increased using the vertical position only in responders (233+/-146 vs. -8+/-9 1ml in nonresponders); this change was correlated to oxygenation change (rho=0.55). End-expiratory lung volume variation from supine to vertical and 1 h later back to supine, measured in 12 patients showed a significant increase during the 1-h upright period in responders (n=7) but not in nonresponders (n=5; 215+/-220 vs. 10+/-22 ml), suggesting a time-dependent recruitment. Vertical positioning is a simple technique that may improve oxygenation and lung recruitment in ARDS patients.

Method and apparatus for determining vertical heat flux of geothermal field

DOEpatents

Poppendiek, Heinz F.

1982-01-01

A method and apparatus for determining vertical heat flux of a geothermal field, and mapping the entire field, is based upon an elongated heat-flux transducer (10) comprised of a length of tubing (12) of relatively low thermal conductivity with a thermopile (20) inside for measuring the thermal gradient between the ends of the transducer after it has been positioned in a borehole for a period sufficient for the tube to reach thermal equilibrium. The transducer is thermally coupled to the surrounding earth by a fluid annulus, preferably water or mud. A second transducer comprised of a length of tubing of relatively high thermal conductivity is used for a second thermal gradient measurement. The ratio of the first measurement to the second is then used to determine the earth's thermal conductivity, k.sub..infin., from a precalculated graph, and using the value of thermal conductivity thus determined, then determining the vertical earth temperature gradient, b, from predetermined steady state heat balance equations which relate the undisturbed vertical earth temperature distributions at some distance from the borehole and earth thermal conductivity to the temperature gradients in the transducers and their thermal conductivity. The product of the earth's thermal conductivity, k.sub..infin., and the earth's undisturbed vertical temperature gradient, b, then determines the earth's vertical heat flux. The process can be repeated many times for boreholes of a geothermal field to map vertical heat flux.

Vertical Transmission of a Drosophila Endosymbiont Via Cooption of the Yolk Transport and Internalization Machinery

PubMed Central

Herren, Jeremy K.; Paredes, Juan C.; Schüpfer, Fanny; Lemaitre, Bruno

2013-01-01

ABSTRACT Spiroplasma is a diverse bacterial clade that includes many vertically transmitted insect endosymbionts, including Spiroplasma poulsonii, a natural endosymbiont of Drosophila melanogaster. These bacteria persist in the hemolymph of their adult host and exhibit efficient vertical transmission from mother to offspring. In this study, we analyzed the mechanism that underlies their vertical transmission, and here we provide strong evidence that these bacteria use the yolk uptake machinery to colonize the germ line. We show that Spiroplasma reaches the oocyte by passing through the intercellular space surrounding the ovarian follicle cells and is then endocytosed into oocytes within yolk granules during the vitellogenic stages of oogenesis. Mutations that disrupt yolk uptake by oocytes inhibit vertical Spiroplasma transmission and lead to an accumulation of these bacteria outside the oocyte. Impairment of yolk secretion by the fat body results in Spiroplasma not reaching the oocyte and a severe reduction of vertical transmission. We propose a model in which Spiroplasma first interacts with yolk in the hemolymph to gain access to the oocyte and then uses the yolk receptor, Yolkless, to be endocytosed into the oocyte. Cooption of the yolk uptake machinery is a powerful strategy for endosymbionts to target the germ line and achieve vertical transmission. This mechanism may apply to other endosymbionts and provides a possible explanation for endosymbiont host specificity. PMID:23462112

Early, Involuntary Top-Down Guidance of Attention From Working Memory

ERIC Educational Resources Information Center

Soto, David; Heinke, Dietmar; Humphreys, Glyn W.; Blanco, Manuel J.

2005-01-01

Four experiments explored the interrelations between working memory, attention, and eye movements. Observers had to identify a tilted line amongst vertical distractors. Each line was surrounded by a colored shape that could be precued by a matching item held in memory. Relative to a neutral baseline, in which no shapes matched the memory item,…

Observed Structure and Environment of Developing and Non-developing Tropical Cyclones in the Western North Pacific Using Satellite Data

DTIC Science & Technology

2009-09-30

perceptible water vapor ( PWV ). The vertical shear surrounding TCs are from the Statistical Typhoon Intensity Prediction Scheme (STIPS, Knaff et al. 2005 and...for TC genesis • Characterize the TC and non-TC environment moisture (dry or moist) using PWV data as a “favorability” index • Characterize

Vertical farming monitoring system using the internet of things (IoT)

NASA Astrophysics Data System (ADS)

Chin, Yap Shien; Audah, Lukman

2017-09-01

Vertical farming had become a hot topic among peak development countries. However, vertical farming is hard to practice because minor changes on the surrounding would leave big impact to the productivity and quality of farming activity. Thus, the aim of this project is to provide a vertical farming monitoring system to help keeping track on the physical conditions of crops. In this system, varieties of sensors will be used to detect current physical conditions, and send the data to BeagleBone Black (BBB) microcontroller either in analog or digital input. Then, the data will be processed by BBB and upload to the Thingspeak Cloud. Furthermore, the system will record the position of equipment in used, which make it easier for maintenance when there is equipment broken down. The system also provide basic remote function where users could turn on/off the watering system, and the LED light via web-based application. The web-based application will also be designed to analyze and display data gathered in the form of graphs, charts or figures, for better understanding. With the improvement implemented on the vertical farming culture, it is expected that the productivity and quality of crops would increase significantly.

Theoretical analysis of nonnuniform skin effects on drawdown variation

NASA Astrophysics Data System (ADS)

Chen, C.-S.; Chang, C. C.; Lee, M. S.

2003-04-01

Under field conditions, the skin zone surrounding the well screen is rarely uniformly distributed in the vertical direction. To understand such non-uniform skin effects on drawdown variation, we assume the skin factor to be an arbitrary, continuous or piece-wise continuous function S_k(z), and incorporate it into a well hydraulics model for constant rate pumping in a homogeneous, vertically anisotropic, confined aquifer. Solutions of depth-specific drawdown and vertical average drawdown are determined by using the Gram-Schmidt method. The non-uniform effects of S_k(z) in vertical average drawdown are averaged out, and can be represented by a constant skin factor S_k. As a result, drawdown of fully penetrating observation wells can be analyzed by appropriate well hydraulics theories assuming a constant skin factor. The S_k is the vertical average value of S_k(z) weighted by the well bore flux q_w(z). In depth-specific drawdown, however, the non-uniform effects of S_k(z) vary with radial and vertical distances, which are under the influence of the vertical profile of S_k(z) and the vertical anisotropy ratio, K_r/K_z. Therefore, drawdown of partially penetrating observation wells may reflect the vertical anisotropy as well as the non-uniformity of the skin zone. The method of determining S_k(z) developed herein involves the use of q_w(z) as can be measured with the borehole flowmeter, and K_r/K_z and S_k as can be determined by the conventional pumping test.

Nonlinear Dynamics of Turbulent Thermals in Shear Flow

NASA Astrophysics Data System (ADS)

Ingel, L. Kh.

2018-03-01

The nonlinear integral model of a turbulent thermal is extended to the case of the horizontal component of its motion relative to the medium (e.g., thermal floating-up in shear flow). In contrast to traditional models, the possibility of a heat source in the thermal is taken into account. For a piecewise constant vertical profile of the horizontal velocity of the medium and a constant vertical velocity shear, analytical solutions are obtained which describe different modes of dynamics of thermals. The nonlinear interaction between the horizontal and vertical components of thermal motion is studied because each of the components influences the rate of entrainment of the surrounding medium, i.e., the growth rate of the thermal size and, hence, its mobility. It is shown that the enhancement of the entrainment of the medium due to the interaction between the thermal and the cross flow can lead to a significant decrease in the mobility of the thermal.

Issues of nanoelectronics: a possible roadmap.

PubMed

Wang, Kang L

2002-01-01

In this review, we will discuss a possible roadmap in scaling a nanoelectronic device from today's CMOS technology to the ultimate limit when the device fails. In other words, at the limit, CMOS will have a severe short channel effect, significant power dissipation in its quiescent (standby) state, and problems related to other essential characteristics. Efforts to use structures such as the double gate, vertical surround gate, and SOI to improve the gate control have continually been made. Other types of structures using SiGe source/drain, asymmetric Schottky source/drain, and the like will be investigated as viable structures to achieve ultimate CMOS. In reaching its scaling limit, tunneling will be an issue for CMOS. The tunneling current through the gate oxide and between the source and drain will limit the device operation. When tunneling becomes significant, circuits may incorporate tunneling devices with CMOS to further increase the functionality per device count. We will discuss both the top-down and bottom-up approaches in attaining the nanometer scale and eventually the atomic scale. Self-assembly is used as a bottom-up approach. The state of the art is reviewed, and the challenges of the multiple-step processing in using the self-assembly approach are outlined. Another facet of the scaling trend is to decrease the number of electrons in devices, ultimately leading to single electrons. If the size of a single-electron device is scaled in such a way that the Coulomb self-energy is higher than the thermal energy (at room temperature), a single-electron device will be able to operate at room temperature. In principle, the speed of the device will be fast as long as the capacitance of the load is also scaled accordingly. The single-electron device will have a small drive current, and thus the load capacitance, including those of interconnects and fanouts, must be small to achieve a reasonable speed. However, because the increase in the density (and/or functionality) of integrated circuits is the principal driver, the wiring or interconnects will increase and become the bottleneck for the design of future high-density and high-functionality circuits, particularly for single-electron devices. Furthermore, the massive interconnects needed in the architecture used today will result in an increase in load capacitance. Thus for single-electron device circuits, it is critical to have minimal interconnect loads. And new types of architectures with minimal numbers of global interconnects will be needed. Cellular automata, which need only nearest-neighbor interconnects, are discussed as a plausible example. Other architectures such as neural networks are also possible. Examples of signal processing using cellular automata are discussed. Quantum computing and information processing are based on quantum mechanical descriptions of individual particles correlated among each other. A quantum bit or qubit is described as a linear superposition of the wave functions of a two-state system, for example, the spin of a particle. With the interaction of two qubits, they are connected in a "wireless fashion" using wave functions via quantum mechanical interaction, referred to as entanglement. The interconnection by the nonlocality of wave functions affords a massive parallel nature for computing or so-called quantum parallelism. We will describe the potential and solid-state implementations of quantum computing and information, using electron spin and/or nuclear spin in Si and Ge. Group IV elements have a long coherent time and other advantages. The example of using SiGe for g factor engineering will be described.

Vertical stiffness is not related to anterior cruciate ligament elongation in professional rugby union players

PubMed Central

Serpell, Benjamin G; Scarvell, Jennie M; Pickering, Mark R; Ball, Nick B; Perriman, Diana; Warmenhoven, John; Smith, Paul N

2016-01-01

Background Novel research surrounding anterior cruciate ligament (ACL) injury is necessary because ACL injury rates have remained unchanged for several decades. An area of ACL risk mitigation which has not been well researched relates to vertical stiffness. The relationship between increased vertical stiffness and increased ground reaction force suggests that vertical stiffness may be related to ACL injury risk. However, given that increased dynamic knee joint stability has been shown to be associated with vertical stiffness, it is possible that modification of vertical stiffness could help to protect against injury. We aimed to determine whether vertical stiffness is related to measures known to load, or which represent loading of, the ACL. Methods This was a cross-sectional observational study of 11 professional Australian rugby players. Knee kinematics and ACL elongation were measured from a 4-dimensional model of a hopping task which simulated the change of direction manoeuvre typically observed when non-contact ACL injury occurs. The model was generated from a CT scan of the participant's knee registered frame by frame to fluoroscopy images of the hopping task. Vertical stiffness was calculated from force plate data. Results There was no association found between vertical stiffness and anterior tibial translation (ATT) or ACL elongation (r=−0.05; p=0.89, and r=−0.07; p=0.83, respectively). ATT was related to ACL elongation (r=0.93; p=0.0001). Conclusions Vertical stiffness was not associated with ACL loading in this cohort of elite rugby players but a novel method for measuring ACL elongation in vivo was found to have good construct validity. PMID:27900192

Non-deterministic quantum CNOT gate with double encoding

NASA Astrophysics Data System (ADS)

Gueddana, Amor; Attia, Moez; Chatta, Rihab

2013-09-01

We define an Asymmetric Partially Polarizing Beam Splitter (APPBS) to be a linear optical component having different reflectivity (transmittance) coefficients, on the upper and the lower arms, for horizontally and vertically Polarized incident photons. Our CNOT model is composed by two APPBSs, one Half Wave Plate (HWP), two Polarizing Beam Splitters (PBSs), a Beam Splitter (BS) and a -phase rotator for specific wavelength. Control qubit operates with dual rail encoding while target qubit is based on polarization encoding. To perform CNOT operation in 4/27 of the cases, input and target incoming photons are injected with different wavelengths.

A variable partially polarizing beam splitter.

PubMed

Flórez, Jefferson; Carlson, Nathan J; Nacke, Codey H; Giner, Lambert; Lundeen, Jeff S

2018-02-01

We present designs for variably polarizing beam splitters. These are beam splitters allowing the complete and independent control of the horizontal and vertical polarization splitting ratios. They have quantum optics and quantum information applications, such as quantum logic gates for quantum computing and non-local measurements for quantum state estimation. At the heart of each design is an interferometer. We experimentally demonstrate one particular implementation, a displaced Sagnac interferometer configuration, that provides an inherent instability to air currents and vibrations. Furthermore, this design does not require any custom-made optics but only common components which can be easily found in an optics laboratory.

A variable partially polarizing beam splitter

NASA Astrophysics Data System (ADS)

Flórez, Jefferson; Carlson, Nathan J.; Nacke, Codey H.; Giner, Lambert; Lundeen, Jeff S.

2018-02-01

We present designs for variably polarizing beam splitters. These are beam splitters allowing the complete and independent control of the horizontal and vertical polarization splitting ratios. They have quantum optics and quantum information applications, such as quantum logic gates for quantum computing and non-local measurements for quantum state estimation. At the heart of each design is an interferometer. We experimentally demonstrate one particular implementation, a displaced Sagnac interferometer configuration, that provides an inherent instability to air currents and vibrations. Furthermore, this design does not require any custom-made optics but only common components which can be easily found in an optics laboratory.

Estimates of lower-tropospheric divergence and average vertical motion in the Southern Great Plains region

NASA Astrophysics Data System (ADS)

Muradyan, P.; Coulter, R.; Kotamarthi, V. R.; Wang, J.; Ghate, V. P.

2016-12-01

Large-scale mean vertical motion affects the atmospheric stability and is an important component in cloud formation. Thus, the analysis of temporal variations in the long-term averages of large-scale vertical motion would provide valuable insights into weather and climate patterns. 915-MHz radar wind profilers (RWP) provide virtually unattended and almost uninterrupted long-term wind speed measurements. We use five years of RWP wind data from the Atmospheric Boundary Layer Experiments (ABLE) located within the Atmospheric Radiation Measurement (ARM) Southern Great Plains (SGP) site from 1999 to 2004. Wind speed data from a triangular array of SGP A1, A2, and A5 ancillary sites are used to calculate the horizontal divergence field over the profiler network area using the line integral method. The distance between each vertex of this triangle is approximately 60km. Thus, the vertical motion profiles deduced from the divergence/convergence of horizontal winds over these spatial scales are of relevance to mesoscale dynamics. The wind data from RWPs are averaged over 1 hour time slice and divergence is calculated at each range gate from the lowest at 82 m to the highest at 2.3 km. An analysis of temporal variations in the long-term averages of the atmospheric divergence and vertical air motion for the months of August/September indicates an overall vertical velocity of -0.002 m/s with a standard deviation of 0.013 m/s, agreeing well with previous studies. Overall mean of the diurnal variation of vertical velocity for the study period from surface to 500 m height is 0.0018 m/s with a standard error of 0.00095 m/s. Seasonal mean daytime vertical winds suggest generally downward motion in Winter and upward motion in Summer. Validation of the derived divergence and vertical motion against a regional climate model (Weather Forecast and Research, WRF) at a spatial resolution of 12 km, as well as clear-sky vs. cloudy conditions comparisons will also be presented.

The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

NASA Astrophysics Data System (ADS)

Greene, Andrew M.

Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1,500 and sub-threshold swing = 340 mV/dec. Split C-V measurements were used to extract an effective channel mobility of muh* = 300 cm2/Vs at Ns = 2 x 1012 cm -2. "Gate-last" MOSFETs grown with an epitaxial p + contact layer were fabricated using selective gate-recess etching techniques. A parasitic "n-channel" limited ION/I OFF ratio and sub-threshold swing, most likely due to effects from the InAs surface layer.

Imaging and tuning polarity at SrTiO3 domain walls

NASA Astrophysics Data System (ADS)

Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; Bell, Christopher; Xie, Yanwu; Chen, Zhuoyu; Hikita, Yasuyuki; Hwang, Harold Y.; Salje, Ekhard K. H.; Kalisky, Beena

2017-12-01

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.

The mechanism by which an asymmetric distribution of plant growth hormone is attained

NASA Astrophysics Data System (ADS)

Bandurski, Robert S.; Schulze, Aga; Jensen, Philip; Desrosiers, Mark; Epel, Bernard; Kowalczyk, Stanley

Zea mays (sweet corn) seedlings attain an asymmetric distribution of the growth hormone indole-3-acetic acid (IAA) within 3 minutes following a gravity stimulus. Both free and esterified IAA (that is total IAA) accumulate to a greater extent in the lower half of the mesocotyl cortex of a horizontally placed seedling than in the upper half. Thus, changes in the ratio of free IAA to ester IAA cannot account for the asymmetric distribution. Our studies demonstrate there is no de novo synthesis of IAA in young seedlings. We conclude that asymmetric IAA distribution is attained by a gravity-induced, potential-regulated gating of the movement of IAA from kernel to shoot and from stele to cortex. As a working theory, which we call the Potential Gating Theory, we propose that perturbation of the plant's bioelectric field, induced by gravity, causes opening and closing of transport channels in the plasmodesmata connecting the vascular stele to the surrounding cortical tissues. This results in asymmetric growth hormone distribution which results in the asymmetric growth characteristic of the gravitropic response.

Localized structures in vibrated emulsions

NASA Astrophysics Data System (ADS)

Falcón, Claudio; Bruggeman, Jake; Pasquali, Matteo; Deegan, Robert D.

2012-04-01

We report our observations of localized structures in a thin layer of an emulsion subjected to vertical oscillations. We observe persistent holes, which are voids that span the layer depth, and kinks, which are fronts between regions with and without fluid. These structures form in response to a finite amplitude perturbation. Combining experimental and rheological measurements, we argue that the ability of these structures to withstand the hydrostatic pressure of the surrounding fluid is due to convection within their rim. For persistent holes the oscillatory component of the convection generates a normal stress which opposes contraction, while for kinks the steady component of the convection generates a shear stress which opposes the hydrostatic stress of the surrounding fluid.

77 FR 22667 - Amendment of Restricted Area R-2917, De Funiak Springs, FL

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-17

...-0226; Airspace Docket No. 12-ASO-10] RIN 2120-AA66 Amendment of Restricted Area R-2917, De Funiak... modifies restricted area R-2917 by reducing the lateral and vertical dimensions of the area. The U.S. Air... of restricted area R-2917, De Funiak Springs, FL, which surrounds an FPS-85 radar system located at...

Packed rod neutron shield for fast nuclear reactors

DOEpatents

Eck, John E.; Kasberg, Alvin H.

1978-01-01

A fast neutron nuclear reactor including a core and a plurality of vertically oriented neutron shield assemblies surrounding the core. Each assembly includes closely packed cylindrical rods within a polygonal metallic duct. The shield assemblies are less susceptible to thermal stresses and are less massive than solid shield assemblies, and are cooled by liquid coolant flow through interstices among the rods and duct.

Interactions of diffuse and focused allogenic recharge in an eogenetic karst aquifer (Florida, USA)

NASA Astrophysics Data System (ADS)

Langston, Abigail L.; Screaton, Elizabeth J.; Martin, Jonathan B.; Bailly-Comte, Vincent

2012-06-01

The karstic upper Floridan aquifer in north-central Florida (USA) is recharged by both diffuse and allogenic recharge. To understand how recharged water moves within the aquifer, water levels and specific conductivities were monitored and slug tests were conducted in wells installed in the aquifer surrounding the Santa Fe River Sink and Rise. Results indicate that diffuse recharge does not mix rapidly within the aquifer but instead flows horizontally. Stratification may be aided by the high matrix porosity of the eogenetic karst aquifer. Purging wells for sample collection perturbed conductivity for several days, reflecting mixing of the stratified water and rendering collection of representative samples difficult. Interpretive numerical simulations suggest that diffuse recharge impacts the intrusion of allogenic water from the conduit by increasing hydraulic head in the surrounding aquifer and thereby reducing influx to the aquifer from the conduit. In turn, the increase of head within the conduits affects flow paths of diffuse recharge by moving newly recharged water vertically as the water table rises and falls. This movement may result in a broad vertical zone of dissolution at the water table above the conduit system, with thinner and more focused water-table dissolution at greater distance from the conduit.

Inversion Build-Up and Cold-Air Outflow in a Small Alpine Sinkhole

NASA Astrophysics Data System (ADS)

Lehner, Manuela; Whiteman, C. David; Dorninger, Manfred

2017-06-01

Semi-idealized model simulations are made of the nocturnal cold-air pool development in the approximately 1-km wide and 100-200-m deep Grünloch basin, Austria. The simulations show qualitatively good agreement with vertical temperature and wind profiles and surface measurements collected during a meteorological field expedition. A two-layer stable atmosphere forms in the basin, with a very strong inversion in the lowest part, below the approximate height of the lowest gap in the surrounding orography. The upper part of the stable layer is less strongly stratified and extends to the approximate height of the second-lowest gap. The basin atmosphere cools most strongly during the first few hours of the night, after which temperatures decrease only slowly. An outflow of air forms through the lowest gap in the surrounding orography. The outflow connects with a weak inflow of air through a gap on the opposite sidewall, forming a vertically and horizontally confined jet over the basin. Basin cooling shows strong sensitivity to surface-layer characteristics, highlighting the large impact of variations in vegetation and soil cover on cold-air pool development, as well as the importance of surface-layer parametrization in numerical simulations of cold-air-pool development.

Vertical III-V nanowire device integration on Si(100).

PubMed

Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

2014-01-01

We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

Lidar measurements of boundary layers, aerosol scattering and clouds during project FIFE

NASA Technical Reports Server (NTRS)

Eloranta, Edwin W. (Principal Investigator)

1995-01-01

A detailed account of progress achieved under this grant funding is contained in five journal papers. The titles of these papers are: The calculation of area-averaged vertical profiles of the horizontal wind velocity using volume imaging lidar data; Volume imaging lidar observation of the convective structure surrounding the flight path of an instrumented aircraft; Convective boundary layer mean depths, cloud base altitudes, cloud top altitudes, cloud coverages, and cloud shadows obtained from Volume Imaging Lidar data; An accuracy analysis of the wind profiles calculated from Volume Imaging Lidar data; and Calculation of divergence and vertical motion from volume-imaging lidar data. Copies of these papers form the body of this report.

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

NASA Technical Reports Server (NTRS)

Scheick, Leif

2010-01-01

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Logic circuits from zero forcing.

PubMed

Burgarth, Daniel; Giovannetti, Vittorio; Hogben, Leslie; Severini, Simone; Young, Michael

We design logic circuits based on the notion of zero forcing on graphs; each gate of the circuits is a gadget in which zero forcing is performed. We show that such circuits can evaluate every monotone Boolean function. By using two vertices to encode each logical bit, we obtain universal computation. We also highlight a phenomenon of "back forcing" as a property of each function. Such a phenomenon occurs in a circuit when the input of gates which have been already used at a given time step is further modified by a computation actually performed at a later stage. Finally, we show that zero forcing can be also used to implement reversible computation. The model introduced here provides a potentially new tool in the analysis of Boolean functions, with particular attention to monotonicity. Moreover, in the light of applications of zero forcing in quantum mechanics, the link with Boolean functions may suggest a new directions in quantum control theory and in the study of engineered quantum spin systems. It is an open technical problem to verify whether there is a link between zero forcing and computation with contact circuits.

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio.

PubMed

Murali, Krishna; Dandu, Medha; Das, Sarthak; Majumdar, Kausik

2018-02-14

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe 2 /SnSe 2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 10 4 , and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V -1 . The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe 2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Performance analysis and simulation of vertical gallium nitride nanowire transistors

NASA Astrophysics Data System (ADS)

Witzigmann, Bernd; Yu, Feng; Frank, Kristian; Strempel, Klaas; Fatahilah, Muhammad Fahlesa; Schumacher, Hans Werner; Wasisto, Hutomo Suryo; Römer, Friedhard; Waag, Andreas

2018-06-01

Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. He joined Bell Laboratories, Murray Hill, NJ, as a Technical Staff Member. In October 2001, he joined the Optical Access and Transport Division, Agere Systems, Alhambra, CA. In 2004, he was appointed an Assistant Professor at ETH Zurich,. Since 2008, at the University of Kassel, Kassel, Germany, and he has been a Professor the Head of the Computational Electronics and Photonics Group, and co-director of CINSaT since 2010. His research interests include computational optoelectronics, process and device design of semiconductor photonic devices, microwave components, and electromagnetics modeling for nanophotonics. Dr. Witzigmann is a senior member of the SPIE and IEEE.

Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells.

PubMed

Yi, Sum-Gyun; Kim, Sung Hyun; Park, Sungjin; Oh, Donggun; Choi, Hwan Young; Lee, Nara; Choi, Young Jai; Yoo, Kyung-Hwa

2016-12-14

We developed Schottky junction photovoltaic cells based on multilayer Mo 1-x W x Se 2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo 0.5 W 0.5 Se 2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe 2 and WSe 2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo 0.5 W 0.5 Se 2 devices. Furthermore, we showed that Mo 0.5 W 0.5 Se 2 -based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

Toward tunable band gap and tunable dirac point in bilayer graphene with molecular doping.

PubMed

Yu, Woo Jong; Liao, Lei; Chae, Sang Hoon; Lee, Young Hee; Duan, Xiangfeng

2011-11-09

The bilayer graphene has attracted considerable attention for potential applications in future electronics and optoelectronics because of the feasibility to tune its band gap with a vertical displacement field to break the inversion symmetry. Surface chemical doping in bilayer graphene can induce an additional offset voltage to fundamentally affect the vertical displacement field and the band gap opening in bilayer graphene. In this study, we investigate the effect of chemical molecular doping on band gap opening in bilayer graphene devices with single or dual gate modulation. Chemical doping with benzyl viologen molecules modulates the displacement field to allow the opening of a transport band gap and the increase of the on/off ratio in the bilayer graphene transistors. Additionally, Fermi energy level in the opened gap can be rationally controlled by the amount of molecular doping to obtain bilayer graphene transistors with tunable Dirac points, which can be readily configured into functional devices, such as complementary inverters.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Electrical characterization of vertically stacked p-FET SOI nanowires

NASA Astrophysics Data System (ADS)

Cardoso Paz, Bruna; Cassé, Mikaël; Barraud, Sylvain; Reimbold, Gilles; Vinet, Maud; Faynot, Olivier; Antonio Pavanello, Marcelo

2018-03-01

This work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional procedure to extract the effective oxide thickness (EOT) and Shift and Ratio Method (S&R) have been adapted and validated through tridimensional numerical simulations. Electrical characterization is performed for NWs with [1 1 0]- and [1 0 0]-oriented channels, as a function of both fin width (WFIN) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15 nm gate length, for both orientations. Effective mobility is found around two times higher for [1 1 0]- in comparison to [1 0 0]-oriented NWs due to higher holes mobility contribution in (1 1 0) plan. Improvements obtained on ION/IOFF by reducing WFIN are mainly due to subthreshold slope decrease, once small and none mobility increase is obtained for [1 1 0]- and [1 0 0]-oriented NWs, respectively.

Transduction channels' gating can control friction on vibrating hair-cell bundles in the ear.

PubMed

Bormuth, Volker; Barral, Jérémie; Joanny, Jean-François; Jülicher, Frank; Martin, Pascal

2014-05-20

Hearing starts when sound-evoked mechanical vibrations of the hair-cell bundle activate mechanosensitive ion channels, giving birth to an electrical signal. As for any mechanical system, friction impedes movements of the hair bundle and thus constrains the sensitivity and frequency selectivity of auditory transduction. Friction is generally thought to result mainly from viscous drag by the surrounding fluid. We demonstrate here that the opening and closing of the transduction channels produce internal frictional forces that can dominate viscous drag on the micrometer-sized hair bundle. We characterized friction by analyzing hysteresis in the force-displacement relation of single hair-cell bundles in response to periodic triangular stimuli. For bundle velocities high enough to outrun adaptation, we found that frictional forces were maximal within the narrow region of deflections that elicited significant channel gating, plummeted upon application of a channel blocker, and displayed a sublinear growth for increasing bundle velocity. At low velocity, the slope of the relation between the frictional force and velocity was nearly fivefold larger than the hydrodynamic friction coefficient that was measured when the transduction machinery was decoupled from bundle motion by severing tip links. A theoretical analysis reveals that channel friction arises from coupling the dynamics of the conformational change associated with channel gating to tip-link tension. Varying channel properties affects friction, with faster channels producing smaller friction. We propose that this intrinsic source of friction may contribute to the process that sets the hair cell's characteristic frequency of responsiveness.

Transduction channels’ gating can control friction on vibrating hair-cell bundles in the ear

PubMed Central

Bormuth, Volker; Barral, Jérémie; Joanny, Jean-François; Jülicher, Frank; Martin, Pascal

2014-01-01

Hearing starts when sound-evoked mechanical vibrations of the hair-cell bundle activate mechanosensitive ion channels, giving birth to an electrical signal. As for any mechanical system, friction impedes movements of the hair bundle and thus constrains the sensitivity and frequency selectivity of auditory transduction. Friction is generally thought to result mainly from viscous drag by the surrounding fluid. We demonstrate here that the opening and closing of the transduction channels produce internal frictional forces that can dominate viscous drag on the micrometer-sized hair bundle. We characterized friction by analyzing hysteresis in the force–displacement relation of single hair-cell bundles in response to periodic triangular stimuli. For bundle velocities high enough to outrun adaptation, we found that frictional forces were maximal within the narrow region of deflections that elicited significant channel gating, plummeted upon application of a channel blocker, and displayed a sublinear growth for increasing bundle velocity. At low velocity, the slope of the relation between the frictional force and velocity was nearly fivefold larger than the hydrodynamic friction coefficient that was measured when the transduction machinery was decoupled from bundle motion by severing tip links. A theoretical analysis reveals that channel friction arises from coupling the dynamics of the conformational change associated with channel gating to tip-link tension. Varying channel properties affects friction, with faster channels producing smaller friction. We propose that this intrinsic source of friction may contribute to the process that sets the hair cell’s characteristic frequency of responsiveness. PMID:24799674

Aromatic–aromatic interactions between residues in KCa3.1 pore helix and S5 transmembrane segment control the channel gating process

PubMed Central

Garneau, Line; Klein, Hélène; Lavoie, Marie-France; Brochiero, Emmanuelle; Parent, Lucie

2014-01-01

The Ca2+-activated potassium channel KCa3.1 is emerging as a therapeutic target for a large variety of health disorders. One distinguishing feature of KCa3.1 is that the channel open probability at saturating Ca2+ concentrations (Pomax) is low, typically 0.1–0.2 for KCa3.1 wild type. This observation argues for the binding of Ca2+ to the calmodulin (CaM)–KCa3.1 complex, promoting the formation of a preopen closed-state configuration leading to channel opening. We have previously shown that the KCa3.1 active gate is most likely located at the level of the selectivity filter. As Ca2+-dependent gating of KCa3.1 originates from the binding of Ca2+ to CaM in the C terminus, the hypothesis of a gate located at the level of the selectivity filter requires that the conformational change initiated in the C terminus be transmitted to the S5 and S6 transmembrane helices, with a resulting effect on the channel pore helix directly connected to the selectivity filter. A study was thus undertaken to determine to what extent the interactions between the channel pore helix with the S5 and S6 transmembrane segments contribute to KCa3.1 gating. Molecular dynamics simulations first revealed that the largest contact area between the pore helix and the S5 plus S6 transmembrane helices involves residue F248 at the C-terminal end of the pore helix. Unitary current recordings next confirmed that modulating aromatic–aromatic interactions between F248 and W216 of the S5 transmembrane helical segment and/or perturbing the interactions between F248 and residues in S6 surrounding the glycine hinge G274 cause important changes in Pomax. This work thus provides the first evidence for a key contribution of the pore helix in setting Pomax by stabilizing the channel closed configuration through aromatic–aromatic interactions involving F248 of the pore helix. We propose that the interface pore helix/S5 constitutes a promising site for designing KCa3.1 potentiators. PMID:24470490

Cryo-EM structure of the cytoplasmic domain of murine transient receptor potential cation channel subfamily C member 6 (TRPC6).

PubMed

Azumaya, Caleigh M; Sierra-Valdez, Francisco; Cordero-Morales, Julio F; Nakagawa, Terunaga

2018-05-11

The kidney maintains the internal milieu by regulating the retention and excretion of proteins, ions, and small molecules. The glomerular podocyte forms the slit diaphragm of the ultrafiltration filter, whose damage leads to progressive kidney failure and focal segmental glomerulosclerosis (FSGS). The canonical transient receptor potential 6 (TRPC6) ion channel is expressed in the podocyte and mutations in its cytoplasmic domain cause FSGS in humans. In vitro evaluation of disease-causing mutations in TRPC6 has revealed that these genetic alterations result in abnormal ion channel gating. However, the mechanism whereby the cytoplasmic domain modulates TRPC6 function is largely unknown. Here we report a cryoEM structure of the cytoplasmic domain of murine TRPC6 at 3.8Å resolution. The cytoplasmic fold of TRPC6 is characterized by an inverted dome-like chamber pierced by four radial horizontal helices that converge into a vertical coiled-coil at the central axis. Unlike in other TRP channels, TRPC6 displays a unique domain swap that occurs at the junction of the horizontal helices and coiled-coil. Multiple FSGS mutations converge at the buried interface between the vertical coiled-coil and the ankyrin repeats, which form the dome, suggesting these regions are critical for allosteric gating modulation. This functionally critical interface is a potential target for drug design. Importantly, dysfunction in other family members leads to learning deficits (TRPC1/4/5) and ataxia (TRPC3). Our data provide a structural framework for the mechanistic investigation of the TRPC family. Published under license by The American Society for Biochemistry and Molecular Biology, Inc.

The Sensitivity of Tropical Squall Lines (GATE and TOGA COARE) to Surface Fluxes: Cloud Resolving Model Simulations

NASA Technical Reports Server (NTRS)

Wang, Yansen; Tao, Wei-Kuo; Simpson, Joanne; Lang, Stephen

1999-01-01

Two tropical squall lines from TOGA COARE and GATE were simulated using a two-dimensional cloud-resolving model to examine the impact of surface fluxes on tropical squall line development and associated precipitation processes. The important question of how CAPE in clear and cloudy areas is maintained in the tropics is also investigated. Although the cloud structure and precipitation intensity are different between the TOGA COARE and GATE squall line cases, the effects of the surface fluxes on the amount of rainfall and on the cloud development processes are quite similar. The simulated total surface rainfall amount in the runs without surface fluxes is about 67% of the rainfall simulated with surface fluxes. The area where surface fluxes originated was categorized into clear and cloudy regions according to whether there was cloud in the vertical column. The model results indicated that the surface fluxes from the large clear air environment are the dominant moisture source for tropical squall line development even though the surface fluxes in the cloud region display a large peak. The high-energy air from the boundary layer in the clear area is what feeds the convection while the CAPE is removed by the convection. The surface rainfall was only reduced 8 to 9% percent in the simulations without surface fluxes in the cloud region. Trajectory and water budget analysis also indicated that most moisture (92%) was from the boundary layer of the clear air environment.

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

NASA Astrophysics Data System (ADS)

Yan-Hui, Zhang; Jie, Wei; Chao, Yin; Qiao, Tan; Jian-Ping, Liu; Peng-Cheng, Li; Xiao-Rong, Luo

2016-02-01

A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD > 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079).

Novel Pathways for Injury from Offshore Oil Spills: Direct, Sublethal and Indirect Effects of the Deepwater Horizon Oil Spill on Pelagic Sargassum Communities

PubMed Central

Powers, Sean P.; Hernandez, Frank J.; Condon, Robert H.; Drymon, J. Marcus; Free, Christopher M.

2013-01-01

The pelagic brown alga Sargassum forms an oasis of biodiversity and productivity in an otherwise featureless ocean surface. The vast pool of oil resulting from the Deepwater Horizon oil spill came into contact with a large portion of the Gulf of Mexico’s floating Sargassum mats. Aerial surveys performed during and after the oil spill show compelling evidence of loss and subsequent recovery of Sargassum. Expanding on the trends observed in the aerial surveys, we conducted a series of mesocosm experiments to test the effect of oil and dispersants on the vertical position and weight of the Sargassum complex (Sargassum natans and S. fluitans), as well as on the dissolved oxygen concentrations surrounding the algae. Dispersant and dispersed-oil had significant effects on the vertical position of both species of Sargassum over a period of 72 hours. Similarly, dissolved oxygen concentrations were lowest in dispersant and dispersed-oil treatments, respectively. Cumulatively, our findings suggest three pathways for oil-spill related injury: (1) Sargassum accumulated oil on the surface exposing animals to high concentrations of contaminants; (2) application of dispersant sank Sargassum, thus removing the habitat and potentially transporting oil and dispersant vertically; and (3) low oxygen surrounded the habitat potentially stressing animals that reside in the alga. These pathways represent direct, sublethal, and indirect effects of oil and dispersant release that minimize the ecosystem services provided by floating Sargassum – the latter two effects are rarely considered in assessing impacts of oil spills or response procedures. PMID:24086378

Novel pathways for injury from offshore oil spills: direct, sublethal and indirect effects of the Deepwater Horizon oil spill on pelagic Sargassum communities.

PubMed

Powers, Sean P; Hernandez, Frank J; Condon, Robert H; Drymon, J Marcus; Free, Christopher M

2013-01-01

The pelagic brown alga Sargassum forms an oasis of biodiversity and productivity in an otherwise featureless ocean surface. The vast pool of oil resulting from the Deepwater Horizon oil spill came into contact with a large portion of the Gulf of Mexico's floating Sargassum mats. Aerial surveys performed during and after the oil spill show compelling evidence of loss and subsequent recovery of Sargassum. Expanding on the trends observed in the aerial surveys, we conducted a series of mesocosm experiments to test the effect of oil and dispersants on the vertical position and weight of the Sargassum complex (Sargassum natans and S. fluitans), as well as on the dissolved oxygen concentrations surrounding the algae. Dispersant and dispersed-oil had significant effects on the vertical position of both species of Sargassum over a period of 72 hours. Similarly, dissolved oxygen concentrations were lowest in dispersant and dispersed-oil treatments, respectively. Cumulatively, our findings suggest three pathways for oil-spill related injury: (1) Sargassum accumulated oil on the surface exposing animals to high concentrations of contaminants; (2) application of dispersant sank Sargassum, thus removing the habitat and potentially transporting oil and dispersant vertically; and (3) low oxygen surrounded the habitat potentially stressing animals that reside in the alga. These pathways represent direct, sublethal, and indirect effects of oil and dispersant release that minimize the ecosystem services provided by floating Sargassum - the latter two effects are rarely considered in assessing impacts of oil spills or response procedures.

Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures

NASA Astrophysics Data System (ADS)

Yang, Huihui; Gao, Feng; Dai, Mingjin; Jia, Dechang; Zhou, Yu; Hu, Pingan

2017-03-01

Two-dimensional (2D) layered materials, such as graphene, hexagonal boron nitride (h-BN), molybdenum disulfide (MoS{}2 ), have attracted tremendous interest due to their atom-thickness structures and excellent physical properties. h-BN has predominant advantages as the dielectric substrate in FET devices due to its outstanding properties such as chemically inert surface, being free of dangling bonds and surface charge traps, especially the large-band-gap insulativity. h-BN involved vertical heterostructures have been widely exploited during the past few years. Such heterostructures adopting h-BN as dielectric layers exhibit enhanced electronic performance, and provide further possibilities for device engineering. Besides, a series of intriguing physical phenomena are observed in certain vertical heterostructures, such as superlattice potential induced replication of Dirac points, band gap tuning, Hofstadter butterfly states, gate-dependent pseudospin mixing. Herein we focus on the rapid developments of h-BN synthesis and fabrication of vertical heterostructures devices based on h-BN, and review the novel properties as well as the potential applications of the heterostructures composed of h-BN. Project supported by the National Natural Science Foundation of China (Nos. 61390502, 21373068), the National Basic Research Program of China (No. 2013CB632900), the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (No. 51521003), and the Self-Planned Task of State Key Laboratory of Robotics and System (No. SKLRS201607B).

A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

NASA Astrophysics Data System (ADS)

Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

2018-04-01

p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

CASTING APPARATUS

DOEpatents

Gray, C.F.; Thompson, R.H.

1958-09-23

An apparatus is described for casting small quantities of uranlum. It consists of a crucible having a hole in the bottom with a mold positioned below. A vertical rcd passes through the hole in the crucible and has at its upper end a piercing head adapted to break the oxide skin encasing a molten uranium body. An air tight cylinder surrounds the crucible and mold, and is arranged to be evacuated.

Development of Elevation and Relief Databases for ICESat-2/ATLAS Receiver Algorithms

NASA Astrophysics Data System (ADS)

Leigh, H. W.; Magruder, L. A.; Carabajal, C. C.; Saba, J. L.; Urban, T. J.; Mcgarry, J.; Schutz, B. E.

2013-12-01

The Advanced Topographic Laser Altimeter System (ATLAS) is planned to launch onboard NASA's ICESat-2 spacecraft in 2016. ATLAS operates at a wavelength of 532 nm with a laser repeat rate of 10 kHz and 6 individual laser footprints. The satellite will be in a 500 km, 91-day repeat ground track orbit at an inclination of 92°. A set of onboard Receiver Algorithms has been developed to reduce the data volume and data rate to acceptable levels while still transmitting the relevant ranging data. The onboard algorithms limit the data volume by distinguishing between surface returns and background noise and selecting a small vertical region around the surface return to be included in telemetry. The algorithms make use of signal processing techniques, along with three databases, the Digital Elevation Model (DEM), the Digital Relief Map (DRM), and the Surface Reference Mask (SRM), to find the signal and determine the appropriate dynamic range of vertical data surrounding the surface for downlink. The DEM provides software-based range gating for ATLAS. This approach allows the algorithm to limit the surface signal search to the vertical region between minimum and maximum elevations provided by the DEM (plus some margin to account for uncertainties). The DEM is constructed in a nested, three-tiered grid to account for a hardware constraint limiting the maximum vertical range to 6 km. The DRM is used to select the vertical width of the telemetry band around the surface return. The DRM contains global values of relief calculated along 140 m and 700 m ground track segments consistent with a 92° orbit. The DRM must contain the maximum value of relief seen in any given area, but must be as close to truth as possible as the DRM directly affects data volume. The SRM, which has been developed independently from the DEM and DRM, is used to set parameters within the algorithm and select telemetry bands for downlink. Both the DEM and DRM are constructed from publicly available digital elevation models. No elevation models currently exist that provide global coverage at a sufficient resolution, so several regional models have been mosaicked together to produce global databases. In locations where multiple data sets are available, evaluations have been made to determine the optimal source for the databases, primarily based on resolution and accuracy. Separate procedures for calculating relief were developed for high latitude (>60N/S) regions in order to take advantage of polar stereographic projections. An additional method for generating the databases was developed for use over Antarctica, such that high resolution, regional elevation models can be easily incorporated as they become available in the future. The SRM is used to facilitate DEM and DRM production by defining those regions that are ocean and sea ice. Ocean and sea ice elevation values are defined by the geoid, while relief is set to a constant value. Results presented will include the details of data source selection, the methodologies used to create the databases, and the final versions of both the DEM and DRM databases. Companion presentations by McGarry, et al. and Carabajal, et al. describe the ATLAS onboard Receiver Algorithms and the database verification, respectively.

Methods and apparatus for measurement of the resistivity of geological formations from within cased boreholes

DOEpatents

Vail, W.B. III.

1989-04-11

Methods and apparatus are disclosed which allow measurement of the resistivity of a geological formation through borehole casing which may be surrounded by brine saturated cement. A.C. current is passed from an electrode in electrical contact with the interior of the borehole casing to an electrode on the surface of the earth. The A.C. voltage difference is measured between two additional vertically disposed electrodes on the interior of the casing which provides a measure of the resistivity of the geological formation. A calibration and nulling procedure is presented which minimizes the influence of variations in the thickness of the casing. The procedure also minimizes the influence of inaccurate placements of the additional vertically disposed electrodes. 3 figs.

Wind-Sculpted Vicinity After Opportunity's Sol 1797 Drive (Vertical)

NASA Technical Reports Server (NTRS)

2009-01-01

NASA's Mars Exploration Rover Opportunity used its navigation camera to take the images combined into this full-circle view of the rover's surroundings just after driving 111 meters (364 feet) on the 1,797th Martian day, or sol, of Opportunity's surface mission (Feb. 12, 2009). North is at the center; south at both ends.

Tracks from the drive recede northward across dark-toned sand ripples in the Meridiani Planum region of Mars. Patches of lighter-toned bedrock are visible on the left and right sides of the image. For scale, the distance between the parallel wheel tracks is about 1 meter (about 40 inches).

This view is presented as a vertical projection with geometric seam correction.

Methods and apparatus for measurement of the resistivity of geological formations from within cased boreholes

DOEpatents

Vail, III, William B.

1989-01-01

Methods and apparatus are disclosed which allow measurement of the resistivity of a geological formation through borehole casing which may be surrounded by brine saturated cement. A.C. current is passed from an electrode in electrical contact with the interior of the borehole casing to an electrode on the surface of the earth. The A.C. voltage difference is measured between two additional vertically disposed electrodes on the interior of the casing which provides a measure of the resistivity of the geological formation. A calibration and nulling procedure is presented which minimizes the influence of variations in the thickness of the casing. The procedure also minimizes the influence of inaccurate placements of the additional vertically disposed electrodes.

Facial expression reconstruction on the basis of selected vertices of triangle mesh

NASA Astrophysics Data System (ADS)

Peszor, Damian; Wojciechowska, Marzena

2016-06-01

Facial expression reconstruction is an important issue in the field of computer graphics. While it is relatively easy to create an animation based on meshes constructed through video recordings, this kind of high-quality data is often not transferred to another model because of lack of intermediary, anthropometry-based way to do so. However, if a high-quality mesh is sampled with sufficient density, it is possible to use obtained feature points to encode the shape of surrounding vertices in a way that can be easily transferred to another mesh with corresponding feature points. In this paper we present a method used for obtaining information for the purpose of reconstructing changes in facial surface on the basis of selected feature points.

Numerical simulation of phenomenon on zonal disintegration in deep underground mining in case of unsupported roadway

NASA Astrophysics Data System (ADS)

Han, Fengshan; Wu, Xinli; Li, Xia; Zhu, Dekang

2018-02-01

Zonal disintegration phenomenon was found in deep mining roadway surrounding rock. It seriously affects the safety of mining and underground engineering and it may lead to the occurrence of natural disasters. in deep mining roadway surrounding rock, tectonic stress in deep mining roadway rock mass, horizontal stress is much greater than the vertical stress, When the direction of maximum principal stress is parallel to the axis of the roadway in deep mining, this is the main reasons for Zonal disintegration phenomenon. Using ABAQUS software to numerical simulation of the three-dimensional model of roadway rupture formation process systematically, and the study shows that when The Direction of maximum main stress in deep underground mining is along the roadway axial direction, Zonal disintegration phenomenon in deep underground mining is successfully reproduced by our numerical simulation..numerical simulation shows that using ABAQUA simulation can reproduce Zonal disintegration phenomenon and the formation process of damage of surrounding rock can be reproduced. which have important engineering practical significance.

Prototype development of an electrical impedance based simultaneous respiratory and cardiac monitoring system for gated radiotherapy.

PubMed

Kohli, Kirpal; Liu, Jeff; Schellenberg, Devin; Karvat, Anand; Parameswaran, Ash; Grewal, Parvind; Thomas, Steven

2014-10-14

In radiotherapy, temporary translocations of the internal organs and tumor induced by respiratory and cardiac activities can undesirably lead to significantly lower radiation dose on the targeted tumor but more harmful radiation on surrounding healthy tissues. Respiratory and cardiac gated radiotherapy offers a potential solution for the treatment of tumors located in the upper thorax. The present study focuses on the design and development of simultaneous acquisition of respiratory and cardiac signal using electrical impedance technology for use in dual gated radiotherapy. An electronic circuitry was developed for monitoring the bio-impedance change due to respiratory and cardiac motions and extracting the cardiogenic ECG signal. The system was analyzed in terms of reliability of signal acquisition, time delay, and functionality in a high energy radiation environment. The resulting signal of the system developed was also compared with the output of the commercially available Real-time Position Management™ (RPM) system in both time and frequency domains. The results demonstrate that the bioimpedance-based method can potentially provide reliable tracking of respiratory and cardiac motion in humans, alternative to currently available methods. When compared with the RPM system, the impedance-based system developed in the present study shows similar output pattern but different sensitivities in monitoring different respiratory rates. The tracking of cardiac motion was more susceptible to interference from other sources than respiratory motion but also provided synchronous output compared with the ECG signal extracted. The proposed hardware-based implementation was observed to have a worst-case time delay of approximately 33 ms for respiratory monitoring and 45 ms for cardiac monitoring. No significant effect on the functionality of the system was observed when it was tested in a radiation environment with the electrode lead wires directly exposed to high-energy X-Rays. The developed system capable of rendering quality signals for tracking both respiratory and cardiac motions can potentially provide a solution for simultaneous dual-gated radiotherapy.

Research status and future trends on surface pre-grouting technology in reforming wall rock of vertical shafts in coal mines in China

NASA Astrophysics Data System (ADS)

Wang, Hua

2018-02-01

In the mine construction, the surface pre-grouting technology is an important method to prevent water blast in excavation process of vertical shaft when the shaft must pass through the thick, water-rich and high water-pressure bedrock aquifer. It has been nearly 60 years since the technology was used to reform wall rock of vertical shaft in coal mine in China for the first time, and the existing technology can basically meet the needs of constructing 1000m deep vertical shaft. Firstly, the article introduces that in view of Magg’s spherical seepage theory and Karol’s spherical seepage theory, Chinese scholars found that the diffusion of grout from borehole into the surrounding strata in horizontal direction is irregular through a lot of research and engineering practice of using the surface pre-grouting technology to reform wall rock of vertical shafts, and put forward the selecting principles of grout’s effective diffusion radius in one grouting engineering; Secondly, according to the shape of the grouting boreholes, surface pre-grouting technology of vertical shaft is divided into two stages: vertical borehole stage and S-type borehole stage. Thirdly, the development status of grouting materials and grouting equipment for the technology is introduced. Fourthly, grouting mode, stage height and pressure of the technology are introduced. Finally, it points out that with the increasing depth of coal mining in China, the technology of reforming wall rock of 1000~2000m deep vertical shafts will face many problems, such as grouting theory, grouting equipment, grouting finishing standard, testing and evaluation of grouting effect, and so on. And it put forward a preliminary approach to solving these problems. This paper points out future research directions of the surface pre-grouting technology in China.

Is perception of vertical impaired in individuals with chronic stroke with a history of 'pushing'?

PubMed

Mansfield, Avril; Fraser, Lindsey; Rajachandrakumar, Roshanth; Danells, Cynthia J; Knorr, Svetlana; Campos, Jennifer

2015-03-17

Post-stroke 'pushing' behaviour appears to be caused by impaired perception of vertical in the roll plane. While pushing behaviour typically resolves with stroke recovery, it is not known if misperception of vertical persists. The purpose of this study was to determine if perception of vertical is impaired amongst stroke survivors with a history of pushing behaviour. Fourteen individuals with chronic stroke (7 with history of pushing) and 10 age-matched healthy controls participated. Participants sat upright on a chair surrounded by a curved projection screen in a laboratory mounted on a motion base. Subjective visual vertical (SVV) was assessed using a 30 trial, forced-choice protocol. For each trial participants viewed a line projected on the screen and indicated if the line was tilted to the right or the left. For the subjective postural vertical (SPV), participants wore a blindfold and the motion base was tilted to the left or right by 10-20°. Participants were asked to adjust the angular movements of the motion base until they felt upright. SPV was not different between groups. SVV was significantly more biased towards the contralesional side for participants with history of pushing (-3.6 ± 4.1°) than those without (-0.1 ± 1.4°). Two individuals with history of pushing had SVV or SPV outside the maximum for healthy controls. Impaired vertical perception may persist in some individuals with prior post-stroke pushing, despite resolution of pushing behaviours, which could have consequences for functional mobility and falls. Copyright © 2015 The Authors. Published by Elsevier Ireland Ltd.. All rights reserved.

Eye-Tracking Reveals that the Strength of the Vertical-Horizontal Illusion Increases as the Retinal Image Becomes More Stable with Fixation

PubMed Central

Chouinard, Philippe A.; Peel, Hayden J.; Landry, Oriane

2017-01-01

The closer a line extends toward a surrounding frame, the longer it appears. This is known as a framing effect. Over 70 years ago, Teodor Künnapas demonstrated that the shape of the visual field itself can act as a frame to influence the perceived length of lines in the vertical-horizontal illusion. This illusion is typically created by having a vertical line rise from the center of a horizontal line of the same length creating an inverted T figure. We aimed to determine if the degree to which one fixates on a spatial location where the two lines bisect could influence the strength of the illusion, assuming that the framing effect would be stronger when the retinal image is more stable. We performed two experiments: the visual-field and vertical-horizontal illusion experiments. The visual-field experiment demonstrated that the participants could discriminate a target more easily when it was presented along the horizontal vs. vertical meridian, confirming a framing influence on visual perception. The vertical-horizontal illusion experiment determined the effects of orientation, size and eye gaze on the strength of the illusion. As predicted, the illusion was strongest when the stimulus was presented in either its standard inverted T orientation or when it was rotated 180° compared to other orientations, and in conditions in which the retinal image was more stable, as indexed by eye tracking. Taken together, we conclude that the results provide support for Teodor Künnapas’ explanation of the vertical-horizontal illusion. PMID:28392764

Toroidal current asymmetry in tokamak disruptions

NASA Astrophysics Data System (ADS)

Strauss, H. R.

2014-10-01

It was discovered on JET that disruptions were accompanied by toroidal asymmetry of the toroidal plasma current I ϕ. It was found that the toroidal current asymmetry was proportional to the vertical current moment asymmetry with positive sign for an upward vertical displacement event (VDE) and negative sign for a downward VDE. It was observed that greater displacement leads to greater measured I ϕ asymmetry. Here, it is shown that this is essentially a kinematic effect produced by a VDE interacting with three dimensional MHD perturbations. The relation of toroidal current asymmetry and vertical current moment is calculated analytically and is verified by numerical simulations. It is shown analytically that the toroidal variation of the toroidal plasma current is accompanied by an equal and opposite variation of the toroidal current flowing in a thin wall surrounding the plasma. These currents are connected by 3D halo current, which is π/2 radians out of phase with the n = 1 toroidal current variations.

Aspects of three-dimensional strain at the margin of the extensional orogen, Virgin River depression area, Nevada, Utah, and Arizona

USGS Publications Warehouse

Anderson, R.E.; Barnhard, T.P.

1993-01-01

The Virgin River depression and surrounding mountains are Neogene features that are partly contiguous with the little-strained rocks of the structural transition to the Colorado Plateau province. This contiguity makes the area ideally suited for evaluating the sense, magnitude, and kinematics of Neogene deformation. Analysis along the strain boundary shows that, compared to the adjacent little-strained area, large-magnitude vertical deformation greatly exceeds extensional deformation and that significant amounts of lateral displacement approximately parallel the province boundary. Isostatic rebound following tectonic denudation is an unlikely direct cause of the strong vertical structural relief adjacent to the strain boundary. Instead, the observed structures are first-order features defining a three-dimensional strain field produced by approximately east-west extension, vertical structural attenuation, and extension-normal shortening. All major structural elements of the strain-boundary strain field are also found in the adjacent Basin and Range. -from Authors

Computations of Vertical Displacement Events with Toroidal Asymmetry

NASA Astrophysics Data System (ADS)

Sovinec, C. R.; Bunkers, K. J.

2017-10-01

Nonlinear numerical MHD modeling with the NIMROD code [https://nimrodteam.org] is being developed to investigate asymmetry during vertical displacement events. We start from idealized up/down symmetric tokamak equilibria with small levels of imposed toroidally asymmetric field errors. Vertical displacement results when removing current from one of the two divertor coils. The Eulerian reference-frame modeling uses temperature-dependent resistivity and anisotropic thermal conduction to distinguish the hot plasma region from surrounding cold, low-density conditions. Diffusion through a resistive wall is slow relative to Alfvenic scales but much faster than resistive plasma diffusion. Loss of the initial edge pressure and current distributions leads to a narrow layer of parallel current, which drives low-n modes that may be related to peeling-dominated ELMs. These modes induce toroidal asymmetry in the conduction current, which connects the simulated plasma to the wall. Work supported by the US DOE through Grant Numbers DE-FG02-06ER54850 and DE-FC02-08ER54975.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, G; Trakul, N; Chang, E

Purpose: To evaluate the reproducibility of target position using moderate voluntary breath-hold during liver stereotactic ablative radiotherapy (SABR). Methods: Two patients who underwent liver SABR on a Varian TrueBeam STx linac were used for this study. Fiducial markers were placed in and around the target in the liver as surrogates for the target position and motion. GTVs were contoured by assessing tumor extent on contrast enhanced CT. The PTV was created from the GTV by adding 2 mm margins to account for the residual motion during breath-holds. A portable biofeedback system was used to facilitate the breath-hold to a reproduciblemore » position. The Varian RPM system was used for gating the linac. Proceeding each treatment, orthogonal kV pairs were taken, and alignment to nearby bony anatomy was performed. Then the breath-hold CBCT was acquired to align the fiducial markers. On-line fluoroscopy was used to fine-tune the breath-hold gating thresholds to correlate with the positions of the fiducial markers. The inter-fraction reproducibility of the target was evaluated by the offsets of the daily breath-hold CBCTs from the paired kV matches as a direct measure of the target position relative to the bony anatomy. The intra-fraction reproducibility of the target position was assessed by the gated window of the RPM marker block for each fraction. Results: The absolute mean offsets between the CBCT and paired kV matches in the vertical, longitudinal, and lateral directions were 0.06 cm, 0.10 cm, and 0.06 cm for patient 1, and 0.37 cm, 0.62 cm, and 0.09 cm for patient 2. The gated window of the RPM marker block for the breath-hold for each fraction was within 0.63 ± 0.16 cm and 0.59 ± 0.12 cm for patients 1 and 2, respectively. Conclusion: Moderate voluntary breath-hold showed good inter- and intra-fraction reproducibility of target position during liver SABR.« less

Algebraic motion of vertically displacing plasmas

NASA Astrophysics Data System (ADS)

Pfefferlé, D.; Bhattacharjee, A.

2018-02-01

The vertical motion of a tokamak plasma is analytically modelled during its non-linear phase by a free-moving current-carrying rod inductively coupled to a set of fixed conducting wires or a cylindrical conducting shell. The solutions capture the leading term in a Taylor expansion of the Green's function for the interaction between the plasma column and the surrounding vacuum vessel. The plasma shape and profiles are assumed not to vary during the vertical drifting phase such that the plasma column behaves as a rigid body. In the limit of perfectly conducting structures, the plasma is prevented to come in contact with the wall due to steep effective potential barriers created by the induced Eddy currents. Resistivity in the wall allows the equilibrium point to drift towards the vessel on the slow timescale of flux penetration. The initial exponential motion of the plasma, understood as a resistive vertical instability, is succeeded by a non-linear "sinking" behaviour shown to be algebraic and decelerating. The acceleration of the plasma column often observed in experiments is thus concluded to originate from an early sharing of toroidal current between the core, the halo plasma, and the wall or from the thermal quench dynamics precipitating loss of plasma current.

A boussinesq model of natural convection in the human eye and the formation of Krukenberg's spindle.

PubMed

Heys, Jeffrey J; Barocas, Victor H

2002-03-01

The cornea of the human eye is cooled by the surrounding air and by evaporation of the tear film. The temperature difference between the cornea and the iris (at core body temperature) causes circulation of the aqueous humor in the anterior chamber of the eye. Others have suggested that the circulation pattern governs the shape of the Krukenberg spindle, a distinctive vertical band of pigment on the posterior cornea surface in some pathologies. We modeled aqueous humor flow the human eye, treating the humor as a Boussinesq fluid and setting the corneal temperature based on infrared surface temperature measurements. The model predicts convection currents in the anterior chamber with velocities comparable to those resulting from forced flow through the gap between the iris and lens. When paths of pigment particles are calculated based on the predicted flow field, the particles circulate throughout the anterior chamber but tend to be near the vertical centerline of the eye for a greatest period of time. Further, the particles are usually in close proximity to the cornea only when they are near the vertical centerline. We conclude that the convective flow pattern of aqueous humor is consistent with a vertical pigment spindle.

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

DOEpatents

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

2015-01-13

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Gasification system

DOEpatents

Haldipur, Gaurang B.; Anderson, Richard G.; Cherish, Peter

1985-01-01

A method and system for injecting coal and process fluids into a fluidized bed gasification reactor. Three concentric tubes extend vertically upward into the fluidized bed. Coal particulates in a transport gas are injected through an inner tube, and an oxygen rich mixture of oxygen and steam are injected through an inner annulus about the inner tube. A gaseous medium relatively lean in oxygen content, such as steam, is injected through an annulus surrounding the inner annulus.

Gasification system

DOEpatents

Haldipur, Gaurang B.; Anderson, Richard G.; Cherish, Peter

1983-01-01

A method and system for injecting coal and process fluids into a fluidized bed gasification reactor. Three concentric tubes extend vertically upward into the fluidized bed. Coal particulates in a transport gas are injected through an inner tube, and an oxygen rich mixture of oxygen and steam are injected through an inner annulus about the inner tube. A gaseous medium relatively lean in oxygen content, such as steam, is injected through an annulus surrounding the inner annulus.

Spatial patterns of wet season precipitation vertical gradients on the Tibetan Plateau and the surroundings.

PubMed

Cuo, Lan; Zhang, Yongxin

2017-07-11

The Tibetan Plateau and the surrounding (TPS) with its vast land mass and high elevation affects regional climate and weather. The TPS is also the headwater of 9 major Asian rivers that provide fresh water for 1.65 billion people and many ecosystems, with wet season (May-September) precipitation being the critical component of the fresh water. Using station observations, ERA-Interim and MERRA2 reanalysis, we find that wet season precipitation displays vertical gradients (i.e., changes with elevation) that vary within the region on the TPS. The decrease of precipitation with elevation occurs in the interior TPS with elevation larger than 4000 m, little or no change over the southeastern TPS, and increase elsewhere. The increase of precipitation with elevation is caused by increasing convective available potential energy (CAPE) and decreasing lifting condensation level (LCL) with elevation overwhelming the effects of decreasing total column water vapor (TCWV) with elevation. The decreasing precipitation with elevation is due to the combined effects of increasing LCL and decreasing TCWV. LCL and CAPE play a more important role than TCWV in determining the spatial patterns. These findings are important for hydrology study in observation scarce mountainous areas, water resources and ecosystem managements in the region.

Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

PubMed

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

2015-08-12

For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

Current-Induced Transistor Sensorics with Electrogenic Cells

PubMed Central

Fromherz, Peter

2016-01-01

The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned. PMID:27120627

Spatially and temporally resolved diagnostics of dense sprays using gated, femtosecond, digital holography

NASA Astrophysics Data System (ADS)

Trolinger, James D.; Dioumaev, Andrei K.; Ziaee, Ali; Minniti, Marco; Dunn-Rankin, Derek

2017-08-01

This paper describes research that demonstrated gated, femtosecond, digital holography, enabling 3D microscopic viewing inside dense, almost opaque sprays, and providing a new and powerful diagnostics capability for viewing fuel atomization processes never seen before. The method works by exploiting the extremely short coherence and pulse length (approximately 30 micrometers in this implementation) provided by a femtosecond laser combined with digital holography to eliminate multiple and wide angle scattered light from particles surrounding the injection region, which normally obscures the image of interest. Photons that follow a path that differs in length by more than 30 micrometers from a straight path through the field to the sensor do not contribute to the holographic recording of photons that travel in a near straight path (ballistic and "snake" photons). To further enhance the method, off-axis digital holography was incorporated to enhance signal to noise ratio and image processing capability in reconstructed images by separating the conjugate images, which overlap and interfere in conventional in-line holography. This also enables digital holographic interferometry. Fundamental relationships and limitations were also examined. The project is a continuing collaboration between MetroLaser and the University of California, Irvine.

Imaging and tuning polarity at SrTiO 3 domain walls

DOE PAGES

Frenkel, Yiftach; Haham, Noam; Shperber, Yishai; ...

2017-09-18

Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here in this paper, we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO 3/SrTiO 3 interface 2DEG at the nanoscale. In particular, SrTiO 3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO 3more » twin boundary and detect a change in LaAlO 3/SrTiO 3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO 3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO 3-based devices on the nanoscale.« less

In silico insight into voltage-gated sodium channel 1.7 inhibition for anti-pain drug discovery.

PubMed

Wang, Mingxing; Li, Wei; Wang, Ying; Song, Yongbo; Wang, Jian; Cheng, Maosheng

2018-05-18

Studies on human genetics have implicated the voltage-gated sodium channel Nav1.7 as an appealing target for the treatment of pain. In this study, we put forward a ligand-based pharmacophore for the first time, which was generated by a set of multiple chemical scaffolds including sulfonamide and non-sulfonamide derivatives and consisted of four chemical features: an aromatic ring, a hydrophobic group and two hydrogen acceptors. The active cavity was divided into three regions according to the properties of the amino acids surrounded and was used for the docking of 16 known active inhibitors. Four accurate docking methods were employed to analyze the ligand-protein interactions in our molecular simulation study. Combining pharmacophore model with docking results, an interaction model was obtained with four features that were consistent with one another, which was more powerful in illuminating the binding site. The research elucidated a valuable relationship between structure and activity, at the same time it proposed an accurate binding model that was instructive in the development of novel and potent Nav1.7 inhibitors in the future. Copyright © 2018 Elsevier Inc. All rights reserved.

Morphologic evaluation of dentoalveolar structures of mandibular anterior teeth during augmented corticotomy-assisted decompensation.

PubMed

Ahn, Hyo-Won; Seo, Dong-Hwi; Kim, Seong-Hun; Park, Young-Guk; Chung, Kyu-Rhim; Nelson, Gerald

2016-10-01

Our aim in this study was to evaluate the effect of augmented corticotomy on the decompensation pattern of mandibular anterior teeth, alveolar bone, and surrounding periodontal tissues during presurgical orthodontic treatment. Thirty skeletal Class III adult patients were divided into 2 groups according to the application of augmented corticotomy labial to the anterior mandibular roots: experimental group (with augmented corticotomy, n = 15) and control group (without augmented corticotomy, n = 15). Lateral cephalograms and cone-beam computed tomography images were taken before orthodontic treatment and before surgery. The measurements included the inclination and position of the mandibular incisors, labial alveolar bone area, vertical alveolar bone height, root length, and alveolar bone thickness at 3 levels surrounding the mandibular central incisors, lateral incisors, and canines. The mandibular incisors were significantly proclined in both groups (P <0.001); however, the labial movement of the incisor tip was greater in the experimental group (P <0.05). Significant vertical alveolar bone loss was observed only in the control group (P <0.001). The middle and lower alveolar thicknesses and labial alveolar bone area increased in the experimental group. In the control group, the upper and middle alveolar thicknesses and labial alveolar bone area decreased significantly. There were no significant differences in dentoalveolar changes between the 3 kinds of anterior teeth in each group, except for root length in the experimental group (P <0.05). Augmented corticotomy provided a favorable decompensation pattern of the mandibular incisors, preserving the periodontal structures surrounding the mandibular anterior teeth for skeletal Class III patients. Copyright © 2016 American Association of Orthodontists. Published by Elsevier Inc. All rights reserved.

Tilt and Translation Motion Perception during Pitch Tilt with Visual Surround Translation

NASA Technical Reports Server (NTRS)

O'Sullivan, Brita M.; Harm, Deborah L.; Reschke, Millard F.; Wood, Scott J.

2006-01-01

The central nervous system must resolve the ambiguity of inertial motion sensory cues in order to derive an accurate representation of spatial orientation. Previous studies suggest that multisensory integration is critical for discriminating linear accelerations arising from tilt and translation head motion. Visual input is especially important at low frequencies where canal input is declining. The NASA Tilt Translation Device (TTD) was designed to recreate postflight orientation disturbances by exposing subjects to matching tilt self motion with conflicting visual surround translation. Previous studies have demonstrated that brief exposures to pitch tilt with foreaft visual surround translation produced changes in compensatory vertical eye movement responses, postural equilibrium, and motion sickness symptoms. Adaptation appeared greatest with visual scene motion leading (versus lagging) the tilt motion, and the adaptation time constant appeared to be approximately 30 min. The purpose of this study was to compare motion perception when the visual surround translation was inphase versus outofphase with pitch tilt. The inphase stimulus presented visual surround motion one would experience if the linear acceleration was due to foreaft self translation within a stationary surround, while the outofphase stimulus had the visual scene motion leading the tilt by 90 deg as previously used. The tilt stimuli in these conditions were asymmetrical, ranging from an upright orientation to 10 deg pitch back. Another objective of the study was to compare motion perception with the inphase stimulus when the tilts were asymmetrical relative to upright (0 to 10 deg back) versus symmetrical (10 deg forward to 10 deg back). Twelve subjects (6M, 6F, 22-55 yrs) were tested during 3 sessions separated by at least one week. During each of the three sessions (out-of-phase asymmetrical, in-phase asymmetrical, inphase symmetrical), subjects were exposed to visual surround translation synchronized with pitch tilt at 0.1 Hz for a total of 30 min. Tilt and translation motion perception was obtained from verbal reports and a joystick mounted on a linear stage. Horizontal vergence and vertical eye movements were obtained with a binocular video system. Responses were also obtained during darkness before and following 15 min and 30 min of visual surround translation. Each of the three stimulus conditions involving visual surround translation elicited a significantly reduced sense of perceived tilt and strong linear vection (perceived translation) compared to pre-exposure tilt stimuli in darkness. This increase in perceived translation with reduction in tilt perception was also present in darkness following 15 and 30 min exposures, provided the tilt stimuli were not interrupted. Although not significant, there was a trend for the inphase asymmetrical stimulus to elicit a stronger sense of both translation and tilt than the out-of-phase asymmetrical stimulus. Surprisingly, the inphase asymmetrical stimulus also tended to elicit a stronger sense of peak-to-peak translation than the inphase symmetrical stimulus, even though the range of linear acceleration during the symmetrical stimulus was twice that of the asymmetrical stimulus. These results are consistent with the hypothesis that the central nervous system resolves the ambiguity of inertial motion sensory cues by integrating inputs from visual, vestibular, and somatosensory systems.

Tomographic phase analysis to detect the site of accessory conduction pathway in Wolff-Parkinson-White syndrome

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, K.; Bunko, H.; Tada, A.

1984-01-01

Phase analysis has been applied to Wolff-Parkinson-White syndrome (WPW) to detect the site of accessory conduction pathway (ACP); however, there was a limitation to estimate the precise location of ACP by planar phase analysis. In this study, the authors applied phase analysis to gated blood pool tomography. Twelve patients with WPW who underwent epicardial mapping and surgical division of ACP were studied by both of gated emission computed tomography (GECT) and routine gated blood pool study (GBPS). The GBPS was performed with Tc-99m red blood cells in multiple projections; modified left anterior oblique, right anterior oblique and/or left lateral views.more » In GECT, short axial, horizontal and vertical long axial blood pool images were reconstructed. Phase analysis was performed using fundamental frequency of the Fourier transform in both GECT and GBPS images, and abnormal initial contractions on both the planar and tomographic phase analysis were compared with the location of surgically confirmed ACPs. In planar phase analysis, abnormal initial phase was identified in 7 out of 12 (58%) patients, while in tomographic phase analysis, the localization of ACP was predicted in 11 out of 12 (92%) patients. Tomographic phase analysis is superior to planar phase images in 8 out of 12 patients to estimate the location of ACP. Phase analysis by GECT can avoid overlap of blood pool in cardiac chambers and has advantage to identify the propagation of phase three-dimensionally. Tomographic phase analysis is a good adjunctive method for patients with WPW to estimate the site of ACP.« less

The Goddard Cumulus Ensemble Model: Model Description and Its Application for Studying the TOGA COARE and GATE Convective Systems

NASA Technical Reports Server (NTRS)

Tao, Wei-Kuo; Einaudi, Franco (Technical Monitor)

2001-01-01

The Goddard Cumulus Ensemble (GCE) model was utilized in two and three dimensions in order to examine the behavior and response of simulated deep tropical cloud systems occurred in west Pacific warm pool region and Atlantic ocean. The periods chosen for simulation were convectively active period over the TOGA-COARE IFA (19-27 December 1992) and GATE (September 1 to 7, 1974). The TOGA COARE IFA period was also in the framework of the GEWEX Cloud System Study (GCSS) WG4 case 2. We will examine the differences between the microphysics (warm rain and ice processes, evaporation/sublimation and condensation/deposition), Q1 (Temperature) and Q2 (Water vapor) budgets between these two convective events occurred in different large-scale environments. The contribution of stratiform precipitation and its relationship to the vertical shear of the large-scale horizontal wind will also be examined. The results from GCSS model intercomparsion will be presented. The new improvements (i.e., microphysics, cloud radiation interaction, surface processes and numerical advection scheme) of the GCE model as well as their sensitivity to the model results will be discussed.

Stagnation, circulation, and erosion of granular materials through belt conveyor sluice gate

NASA Astrophysics Data System (ADS)

Pohlman, Nicholas; Moralda, Michael; Dunne, Ryan

2013-11-01

Control of flow rates in conversion reactors for discrete materials like biomass can be achieved in belt conveyors through a combination of belt speed, hopper size, and aperture opening. As material is extracted from the bottom of the storage hopper, other material cannot achieve plug flow and therefore is restricted from exiting through a sluice-gate type opening. The excess material moves vertically from the opening causing a pile up and recirculation back along the free surface of the hopper. Experimental results obtained through high speed imaging show the position of the stagnation point as well as the rate of circulation is dependent on the mass flow rate achieved and instantaneous fill level. The movement of material into the plug flow along the belt allows verification of deposition models on erodible beds rather than rigid surfaces with artificial roughness of glued particles. Similarly, the pile-up at the exit influences the efficiency of the transport affecting the narrow energy return on investment of biomass resources. The laboratory-scale behavior can therefore be translated into industrial performance metrics for increased operational efficiency. This work is supported by the NSF REU Site Operation E-Tank under award number 1156789.

Organ radiation exposure with EOS: GATE simulations versus TLD measurements

NASA Astrophysics Data System (ADS)

Clavel, A. H.; Thevenard-Berger, P.; Verdun, F. R.; Létang, J. M.; Darbon, A.

2016-03-01

EOS® is an innovative X-ray imaging system allowing the acquisition of two simultaneous images of a patient in the standing position, during the vertical scan of two orthogonal fan beams. This study aimed to compute organs radiation exposure to a patient, in the particular geometry of this system. Two different positions of the patient in the machine were studied, corresponding to postero-anterior plus left lateral projections (PA-LLAT) and antero-posterior plus right lateral projections (AP-RLAT). To achieve this goal, a Monte-Carlo simulation was developed based on a GATE environment. To model the physical properties of the patient, a computational phantom was produced based on computed tomography scan data of an anthropomorphic phantom. The simulations provided several organs doses, which were compared to previously published dose results measured with Thermo Luminescent Detectors (TLD) in the same conditions and with the same phantom. The simulation results showed a good agreement with measured doses at the TLD locations, for both AP-RLAT and PA-LLAT projections. This study also showed that the organ dose assessed only from a sample of locations, rather than considering the whole organ, introduced significant bias, depending on organs and projections.

Electromagnetic micropores: fabrication and operation.

PubMed

Basore, Joseph R; Lavrik, Nickolay V; Baker, Lane A

2010-12-21

We describe the fabrication and characterization of electromagnetic micropores. These devices consist of a micropore encompassed by a microelectromagnetic trap. Fabrication of the device involves multiple photolithographic steps, combined with deep reactive ion etching and subsequent insulation steps. When immersed in an electrolyte solution, application of a constant potential across the micropore results in an ionic current. Energizing the electromagnetic trap surrounding the micropore produces regions of high magnetic field gradients in the vicinity of the micropore that can direct motion of a ferrofluid onto or off of the micropore. This results in dynamic gating of the ion current through the micropore structure. In this report, we detail fabrication and characterize the electrical and ionic properties of the prepared electromagnetic micropores.

Echo-Planar Imaging for a 9.4 Tesla Vertical-Bore Superconducting Magnet Using an Unshielded Gradient Coil.

PubMed

Kodama, Nao; Kose, Katsumi

2016-10-11

Echo-planar imaging (EPI) sequences were developed for a 9.4 Tesla vertical standard bore (~54 mm) superconducting magnet using an unshielded gradient coil optimized for live mice imaging and a data correction technique with reference scans. Because EPI requires fast switching of intense magnetic field gradients, eddy currents were induced in the surrounding metallic materials, e.g., the room temperature bore, and this produced serious artifacts on the EPI images. We solved the problem using an unshielded gradient coil set of proper size (outer diameter = 39 mm, inner diameter = 32 mm) with time control of the current rise and reference scans. The obtained EPI images of a phantom and a plant sample were almost artifact-free and demonstrated the promise of our approach.

Elastogranular Mechanics: Buckling, Jamming, and Structure Formation.

PubMed

Schunter, David J; Brandenbourger, Martin; Perriseau, Sophia; Holmes, Douglas P

2018-02-16

Confinement of a slender body into a granular array induces stress localization in the geometrically nonlinear structure, and jamming, reordering, and vertical dislodging of the surrounding granular medium. By varying the initial packing density of grains and the length of a confined elastica, we identify the critical length necessary to induce jamming, and demonstrate how folds couple with the granular medium to localize along grain boundaries. Above the jamming threshold, the characteristic length of elastica deformation is shown to diverge in a manner that is coupled with the motion and rearrangement of the grains, suggesting the ordering of the granular array governs the deformation of the slender structure. However, overconfinement of the elastica will vertically dislodge grains, a form of stress relaxation in the granular medium that illustrates the intricate coupling in elastogranular interactions.

Elastogranular Mechanics: Buckling, Jamming, and Structure Formation

NASA Astrophysics Data System (ADS)

Schunter, David J.; Brandenbourger, Martin; Perriseau, Sophia; Holmes, Douglas P.

2018-02-01

Confinement of a slender body into a granular array induces stress localization in the geometrically nonlinear structure, and jamming, reordering, and vertical dislodging of the surrounding granular medium. By varying the initial packing density of grains and the length of a confined elastica, we identify the critical length necessary to induce jamming, and demonstrate how folds couple with the granular medium to localize along grain boundaries. Above the jamming threshold, the characteristic length of elastica deformation is shown to diverge in a manner that is coupled with the motion and rearrangement of the grains, suggesting the ordering of the granular array governs the deformation of the slender structure. However, overconfinement of the elastica will vertically dislodge grains, a form of stress relaxation in the granular medium that illustrates the intricate coupling in elastogranular interactions.

Estimating vertical velocity and radial flow from Doppler radar observations of tropical cyclones

NASA Astrophysics Data System (ADS)

Lee, J. L.; Lee, W. C.; MacDonald, A. E.

2006-01-01

The mesoscale vorticity method (MVM) is used in conjunction with the ground-based velocity track display (GBVTD) to derive the inner-core vertical velocity from Doppler radar observations of tropical cyclone (TC) Danny (1997). MVM derives the vertical velocity from vorticity variations in space and in time based on the mesoscale vorticity equation. The use of MVM and GBVTD allows us to derive good correlations among the eye-wall maximum wind, bow-shaped updraught and echo east of the eye-wall in Danny. Furthermore, we demonstrate the dynamically consistent radial flow can be derived from the vertical velocity obtained from MVM using the wind decomposition technique that solves the Poisson equations over a limited-area domain. With the wind decomposition, we combine the rotational wind which is obtained from Doppler radar wind observations and the divergent wind which is inferred dynamically from the rotational wind to form the balanced horizontal wind in TC inner cores, where rotational wind dominates the divergent wind. In this study, we show a realistic horizontal and vertical structure of the vertical velocity and the induced radial flow in Danny's inner core. In the horizontal, the main eye-wall updraught draws in significant surrounding air, converging at the strongest echo where the maximum updraught is located. In the vertical, the main updraught tilts vertically outwards, corresponding very well with the outward-tilting eye-wall. The maximum updraught is located at the inner edge of the eye-wall clouds, while downward motions are found at the outer edge. This study demonstrates that the mesoscale vorticity method can use high-temporal-resolution data observed by Doppler radars to derive realistic vertical velocity and the radial flow of TCs. The vorticity temporal variations crucial to the accuracy of the vorticity method have to be derived from a high-temporal-frequency observing system such as state-of-the-art Doppler radars.

Absolute Position Encoders With Vertical Image Binning

NASA Technical Reports Server (NTRS)

Leviton, Douglas B.

2005-01-01

Improved optoelectronic patternrecognition encoders that measure rotary and linear 1-dimensional positions at conversion rates (numbers of readings per unit time) exceeding 20 kHz have been invented. Heretofore, optoelectronic pattern-recognition absoluteposition encoders have been limited to conversion rates <15 Hz -- too low for emerging industrial applications in which conversion rates ranging from 1 kHz to as much as 100 kHz are required. The high conversion rates of the improved encoders are made possible, in part, by use of vertically compressible or binnable (as described below) scale patterns in combination with modified readout sequences of the image sensors [charge-coupled devices (CCDs)] used to read the scale patterns. The modified readout sequences and the processing of the images thus read out are amenable to implementation by use of modern, high-speed, ultra-compact microprocessors and digital signal processors or field-programmable gate arrays. This combination of improvements makes it possible to greatly increase conversion rates through substantial reductions in all three components of conversion time: exposure time, image-readout time, and image-processing time.

ATCA digital controller hardware for vertical stabilization of plasmas in tokamaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batista, A. J. N.; Sousa, J.; Varandas, C. A. F.

2006-10-15

The efficient vertical stabilization (VS) of plasmas in tokamaks requires a fast reaction of the VS controller, for example, after detection of edge localized modes (ELM). For controlling the effects of very large ELMs a new digital control hardware, based on the Advanced Telecommunications Computing Architecture trade mark sign (ATCA), is being developed aiming to reduce the VS digital control loop cycle (down to an optimal value of 10 {mu}s) and improve the algorithm performance. The system has 1 ATCA trade mark sign processor module and up to 12 ATCA trade mark sign control modules, each one with 32 analogmore » input channels (12 bit resolution), 4 analog output channels (12 bit resolution), and 8 digital input/output channels. The Aurora trade mark sign and PCI Express trade mark sign communication protocols will be used for data transport, between modules, with expected latencies below 2 {mu}s. Control algorithms are implemented on a ix86 based processor with 6 Gflops and on field programmable gate arrays with 80 GMACS, interconnected by serial gigabit links in a full mesh topology.« less

The Strategic Importance of Shale Gas (Issue Paper, Volume 16-11, September 2011)

DTIC Science & Technology

2011-09-01

coupled with Hydraulic Fracturing (“hydrofracking”).16 This process involves steering a vertical well horizontally and then utilizing a water based...extracting the gas. Concern stems over the process of “hydrofracking” and how it impacts the region surrounding the drill site.24 Hydraulic ...activists are concerned that contamination of ground water may be caused by the leaching of the fracking fluid into aquifers and/or streams.25 While

A Gravimetric Geoid Model for Vertical Datum in Canada

NASA Astrophysics Data System (ADS)

Veronneau, M.; Huang, J.

2004-05-01

The need to realize a new vertical datum for Canada dates back to 1976 when a study group at Geodetic Survey Division (GSD) investigated problems related to the existing vertical system (CGVD28) and recommended a redefinition of the vertical datum. The US National Geodetic Survey and GSD cooperated in the development of a new North American Vertical Datum (NAVD88). Although the USA adopted NAVD88 in 1993 as its datum, Canada declined to do so as a result of unexplained discrepancies of about 1.5 m from east to west coasts (likely due to systematic errors). The high cost of maintaining the vertical datum by the traditional spirit leveling technique coupled with budgetary constraints has forced GSD to modify its approach. A new attempt (project) to modernize the vertical datum is currently in process in Canada. The advance in space-based technologies (e.g. GPS, satellite radar altimetry, satellite gravimetry) and new developments in geoid modeling offer an alternative to spirit leveling. GSD is planning to implement, after stakeholder consultations, a geoid model as the new vertical datum for Canada, which will allow space-based technology users access to an accurate and uniform datum all across the Canadian landmass and surrounding oceans. CGVD28 is only accessible through a limited number of benchmarks, primarily located in southern Canada. The new vertical datum would be less sensitive to geodynamic activities (post-glacial rebound and earthquake), local uplift and subsidence, and deterioration of the benchmarks. The adoption of a geoid model as a vertical datum does not mean that GSD is neglecting the current benchmarks. New heights will be given to the benchmarks by a new adjustment of the leveling observations, which will be constrained to the geoid model at selected stations of the Active Control System (ACS) and Canadian Base Network (CBN). This adjustment will not correct vertical motion at benchmarks, which has occurred since the last leveling observations. The presentation provides an overview of the "Height Modernization" project, and discusses the accuracy of the existing geoid models in Canada.

Wide-Bandgap Semiconductor Devices for Automotive Applications

NASA Astrophysics Data System (ADS)

Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

2007-06-01

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

Improvement of on/off ratio in single-shot multichannel demultiplexing by using an optical Kerr gate of a squarylium dye J aggregate film

NASA Astrophysics Data System (ADS)

Sato, Yasuhiro; Furuki, Makoto; Tian, Minquan; Iwasa, Izumi; Pu, Lyong Sun; Tatsuura, Satoshi

2002-04-01

We demonstrated ultrafast single-shot multichannel demultiplexing by using a squarylium dye J aggregate film as an optical Kerr medium. High efficiency and fast recovery of the optical Kerr responses were achieved when a signal-pulse wavelength was close to the absorption peak of the J aggregate film with off-resonant excitation. The on/off ratio in demultiplexing of 1 Tb/s signals was improved to be approximately 5. By introducing time delay to both horizontal and vertical directions, we succeeded in directly observing the conversion of 1 Tb/s serial signals into two-dimensionally arranged parallel signals.

Strong electron-hole exchange in coherently coupled quantum dots.

PubMed

Fält, Stefan; Atatüre, Mete; Türeci, Hakan E; Zhao, Yong; Badolato, Antonio; Imamoglu, Atac

2008-03-14

We have investigated few-body states in vertically stacked quantum dots. Because of a small interdot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange plays a prominent role. By tuning the gate bias, we are able to turn this coupling off and study a complementary regime where total electron spin is a good quantum number. The use of differential transmission allows us to obtain unambiguous signatures of the interplay between electron and hole-spin interactions. Small tunnel coupling also enables us to demonstrate all-optical charge sensing, where a conditional exciton energy shift in one dot identifies the charging state of the coupled partner.

Forcing functions governing salt transport processes in coastal navigation canals and connectivity to surrounding marshes in South Louisiana using Houma Navigation Canal as a surrogate

USGS Publications Warehouse

Snedden, Gregg

2014-01-01

Understanding how circulation and mixing processes in coastal navigation canals influence the exchange of salt between marshes and coastal ocean, and how those processes are modulated by external physical processes, is critical to anticipating effects of future actions and circumstance. Examples of such circumstances include deepening the channel, placement of locks in the channel, changes in freshwater discharge down the channel, changes in outer continental shelf (OCS) vessel traffic volume, and sea level rise. The study builds on previous BOEM-funded studies by investigating salt flux variability through the Houma Navigation Canal (HNC). It examines how external physical factors, such as buoyancy forcing and mixing from tidal stirring and OCS vessel wakes, influence dispersive and advective fluxes through the HNC and the impact of this salt flux on salinity in nearby marshes. This study quantifies salt transport processes and salinity variability in the HNC and surrounding Terrebonne marshes. Data collected for this study include time-series data of salinity and velocity in the HNC, monthly salinity-depth profiles along the length of the channel, hourly vertical profiles of velocity and salinity over multiple tidal cycles, and salinity time series data at three locations in the surrounding marshes along a transect of increasing distance from the HNC. Two modes of vertical current structure were identified. The first mode, making up 90% of the total flow field variability, strongly resembled a barotropic current structure and was coherent with alongshelf wind stress over the coastal Gulf of Mexico. The second mode was indicative of gravitational circulation and was linked to variability in tidal stirring and the longitudinal salinity gradients along the channel’s length. Diffusive process were dominant drivers of upestuary salt transport, except during periods of minimal tidal stirring when gravitational circulation became more important. Salinity in the surrounding marshes was much more responsive to salinity variations in the HNC than it was to variations in the lower Terrebonne marshes, suggesting that the HNC is the primary conduit for saltwater intrusion to the middle Terrebonne marshes. Finally, salt transport to the middle Terrebonne marshes directly associated with vessel wakes was negligible.

Adaptive changes in the angular VOR: duration of gain changes and lack of effect of nodulo-uvulectomy.

PubMed

Yakushin, Sergei B; Bukharina, Svetlana E; Raphan, Theodore; Buttner-Ennever, Jean; Cohen, Bernard

2003-10-01

Alterations in the gain of the vertical angular vestibulo-ocular reflex (VOR) are dependent on the head position in which the gain changes were produced. We determined how long gravity-dependent gain changes last in monkeys after four hours of adaptation, and whether the adaptation is mediated through the nodulus and uvula of the vestibulocerebellum. Vertical VOR gains were adaptively modified by rotation about an interaural axis, in phase or out of phase with the visual surround. Vertical VOR gains were modified with the animals in one of three orientations: upright, left-side down, or right-side down. Monkeys were tested in darkness for up to four days after adaptation using sinusoidal rotation about an interaural axis that was incrementally tilted in 10 degrees steps from vertical to side down positions. Animals were unrestrained in their cages in normal light conditions between tests. Gravity-dependent gain changes lasted for a day or less after adaptation while upright, but persisted for two days or more after on-side adaptation. These data show that gravity-dependent gain changes can last for prolonged periods after only four hours of adaptation in monkeys, as in humans. They also demonstrate that natural head movements made while upright do not provide an adequate stimulus for rapid recovery of vertical VOR gains that were induced on side. In two animals, the nodulus and uvula were surgically ablated. Vertical gravity-dependent gain changes were not significantly different before and after surgery, indicating that the nodulus and uvula do not have a critical role in producing them.

Seaglider surveys at Ocean Station Papa: Diagnosis of upper-ocean heat and salt balances using least squares with inequality constraints

NASA Astrophysics Data System (ADS)

Pelland, Noel A.; Eriksen, Charles C.; Cronin, Meghan F.

2017-06-01

Heat and salt balances in the upper 200 m are examined using data from Seaglider spatial surveys June 2008 to January 2010 surrounding a NOAA surface mooring at Ocean Station Papa (OSP; 50°N, 145°W). A least-squares approach is applied to repeat Seaglider survey and moored measurements to solve for unknown or uncertain monthly three-dimensional circulation and vertical diffusivity. Within the surface boundary layer, the estimated heat and salt balances are dominated throughout the surveys by turbulent flux, vertical advection, and for heat, radiative absorption. When vertically integrated balances are considered, an estimated upwelling of cool water balances the net surface input of heat, while the corresponding large import of salt across the halocline due to upwelling and diffusion is balanced by surface moisture input and horizontal import of fresh water. Measurement of horizontal gradients allows the estimation of unresolved vertical terms over more than one annual cycle; diffusivity in the upper-ocean transition layer decreases rapidly to the depth of the maximum near-surface stratification in all months, with weak seasonal modulation in the rate of decrease and profile amplitude. Vertical velocity is estimated to be on average upward but with important monthly variations. Results support and expand existing evidence concerning the importance of horizontal advection in the balances of heat and salt in the Gulf of Alaska, highlight time and depth variability in difficult-to-measure vertical transports in the upper ocean, and suggest avenues of further study in future observational work at OSP.

Seagrass ( Posidonia oceanica) vertical growth as an early indicator of fish farm-derived stress

NASA Astrophysics Data System (ADS)

Marbà, Núria; Santiago, Rocío; Díaz-Almela, Elena; Álvarez, Elvira; Duarte, Carlos M.

2006-04-01

The usefulness of vertical rhizome growth as an early indicator of fish farm impacts to Posidonia oceanica meadows was tested by comparing annual estimates of vertical rhizome growth, quantified retrospectively, at distances ranging between 5 and 1200 m from fish cages at four Mediterranean locations (Cyprus, Greece, Italy and Spain). The studied fish farms had been operating since, at least, 1997, producing between 150 and 1150 tons yr -1 of sea bream ( Sparus aurata) and sea bass ( Dicentrachus labrax), and, at Italy, also sharpsnout sea bream ( Diplodus puntazzo). The reconstructed vertical rhizome growth spanned from 19 to 25 years of growth, depending on sites, and the average vertical rhizome growth before the onset of fish farm operations ranged between 4.48 and 8.79 mm yr -1. The vertical rhizome growth after the onset of farming activities declined significantly ( t-test, P < 0.05) from the control station (at >800 m from the farm; vertical growth rate averaged 6.79, 5.52, 3.89 and 3.70 mm yr -1 at Cyprus, Greece, Italy and Spain control stations, respectively) to the impacted one (at 5-300 m from the farm; vertical growth rate was 4.82, 3.52, 2.77 and 1.92 mm yr -1 at Cyprus, Greece, Italy and Spain impacted stations, respectively) at each farm. Moreover, vertical growth significantly ( t-test, P < 0.05) declined by about twofold following the onset of fish farm operations for the extant meadow nearest to the cages, as well as those supporting intermediate impacts at distances 35-400 m from the cages. Vertical rhizome growth was not significantly affected after the onset of fish farm operations for the meadows located more than 800 m from the farm, except in those from the Italian site, the largest farm. Examination of the time course of vertical growth for individual rhizomes in the areas of the meadow nearest to the farms, except for those at Cyprus, showed that the decline in vertical growth was initiated within the year of the onset of farming activities, suggesting a negligible resistance of seagrass meadows to fish farm impacts. The results obtained confirm that fish farm activities strongly affect seagrass health on the surrounding meadows, and clearly demonstrate the value of reductions in vertical rhizome growth as an early warning symptom of stress and impacts to P. oceanica meadows.

Segmentation and tracking of lung nodules via graph-cuts incorporating shape prior and motion from 4D CT.

PubMed

Cha, Jungwon; Farhangi, Mohammad Mehdi; Dunlap, Neal; Amini, Amir A

2018-01-01

We have developed a robust tool for performing volumetric and temporal analysis of nodules from respiratory gated four-dimensional (4D) CT. The method could prove useful in IMRT of lung cancer. We modified the conventional graph-cuts method by adding an adaptive shape prior as well as motion information within a signed distance function representation to permit more accurate and automated segmentation and tracking of lung nodules in 4D CT data. Active shape models (ASM) with signed distance function were used to capture the shape prior information, preventing unwanted surrounding tissues from becoming part of the segmented object. The optical flow method was used to estimate the local motion and to extend three-dimensional (3D) segmentation to 4D by warping a prior shape model through time. The algorithm has been applied to segmentation of well-circumscribed, vascularized, and juxtapleural lung nodules from respiratory gated CT data. In all cases, 4D segmentation and tracking for five phases of high-resolution CT data took approximately 10 min on a PC workstation with AMD Phenom II and 32 GB of memory. The method was trained based on 500 breath-held 3D CT data from the LIDC data base and was tested on 17 4D lung nodule CT datasets consisting of 85 volumetric frames. The validation tests resulted in an average Dice Similarity Coefficient (DSC) = 0.68 for all test data. An important by-product of the method is quantitative volume measurement from 4D CT from end-inspiration to end-expiration which will also have important diagnostic value. The algorithm performs robust segmentation of lung nodules from 4D CT data. Signed distance ASM provides the shape prior information which based on the iterative graph-cuts framework is adaptively refined to best fit the input data, preventing unwanted surrounding tissue from merging with the segmented object. © 2017 American Association of Physicists in Medicine.

Feasibility of deep-inspiration breath-hold PET/CT with short-time acquisition: detectability for pulmonary lesions compared with respiratory-gated PET/CT.

PubMed

Yamashita, Shozo; Yokoyama, Kunihiko; Onoguchi, Masahisa; Yamamoto, Haruki; Hiko, Shigeaki; Horita, Akihiro; Nakajima, Kenichi

2014-01-01

Deep-inspiration breath-hold (DIBH) PET/CT with short-time acquisition and respiratory-gated (RG) PET/CT are performed for pulmonary lesions to reduce the respiratory motion artifacts, and to obtain more accurate standardized uptake value (SUV). DIBH PET/CT demonstrates significant advantages in terms of rapid examination, good quality of CT images and low radiation exposure. On the other hand, the image quality of DIBH PET is generally inferior to that of RG PET because of short-time acquisition resulting in poor signal-to-noise ratio. In this study, RG PET has been regarded as a gold standard, and its detectability between DIBH and RG PET studies was compared using each of the most optimal reconstruction parameters. In the phantom study, the most optimal reconstruction parameters for DIBH and RG PET were determined. In the clinical study, 19 cases were examined using each of the most optimal reconstruction parameters. In the phantom study, the most optimal reconstruction parameters for DIBH and RG PET were different. Reconstruction parameters of DIBH PET could be obtained by reducing the number of subsets for those of RG PET in the state of fixing the number of iterations. In the clinical study, high correlation in the maximum SUV was observed between DIBH and RG PET studies. The clinical result was consistent with that of the phantom study surrounded by air since most of the lesions were located in the low pulmonary radioactivity. DIBH PET/CT may be the most practical method which can be the first choice to reduce respiratory motion artifacts if the detectability of DIBH PET is equivalent with that of RG PET. Although DIBH PET may have limitations in suboptimal signal-to-noise ratio, most of the lesions surrounded by low background radioactivity could provide nearly equivalent image quality between DIBH and RG PET studies when each of the most optimal reconstruction parameters was used.

Experimental study of shock-accelerated inclined heavy gas cylinder

DOE PAGES

Olmstead, Dell; Wayne, Patrick; Yoo, Jae-Hwun; ...

2017-05-23

An experimental study examines shock acceleration with an initially diffuse cylindrical column of sulfur hexafluoride surrounded by air and inclined with respect to the shock front. Three-dimensional vorticity deposition produces flow patterns whose evolution is captured with planar laser-induced fluorescence in two planes. Both planes are thus parallel to the direction of the shock propagation. The first plane is vertical and passes through the axis of the column. The second visualization plane is normal to the first plane and passes through the centerline of the shock tube. Vortex formation in the vertical and centerline planes is initially characterized by differentmore » rates and morphologies due to differences in initial vorticity deposition. In the vertical plane, the vortex structure manifests a periodicity that varies with Mach number. The dominant wavelength in the vertical plane can be related to the geometry and compressibility of the initial conditions. At later times, the vortex interaction produces a complex and irregular three-dimensional pattern suggesting transition to turbulence. We present highly repeatable experimental data for Mach numbers 1.13, 1.4, 1.7, and 2.0 at column incline angles of 0, 20, and 30 degrees for about 50 nominal cylinder diameters (30 cm) of downstream travel.« less

Algebraic motion of vertically displacing plasmas

DOE PAGES

Pfefferle, D.; Bhattacharjee, A.

2018-02-27

In this paper, the vertical motion of a tokamak plasma is analytically modelled during its non-linear phase by a free-moving current-carrying rod inductively coupled to a set of fixed conducting wires or a cylindrical conducting shell. The solutions capture the leading term in a Taylor expansion of the Green's function for the interaction between the plasma column and the surrounding vacuum vessel. The plasma shape and profiles are assumed not to vary during the vertical drifting phase such that the plasma column behaves as a rigid body. In the limit of perfectly conducting structures, the plasma is prevented to comemore » in contact with the wall due to steep effective potential barriers created by the induced Eddy currents. Resistivity in the wall allows the equilibrium point to drift towards the vessel on the slow timescale of flux penetration. The initial exponential motion of the plasma, understood as a resistive vertical instability, is succeeded by a non-linear “sinking” behaviour shown to be algebraic and decelerating. Finally, the acceleration of the plasma column often observed in experiments is thus concluded to originate from an early sharing of toroidal current between the core, the halo plasma, and the wall or from the thermal quench dynamics precipitating loss of plasma current.« less

A review of models of vertical, leg, and knee stiffness in adults for running, jumping or hopping tasks.

PubMed

Serpell, Benjamin G; Ball, Nick B; Scarvell, Jennie M; Smith, Paul N

2012-01-01

The 'stiffness' concept originates from Hooke's law which states that the force required to deform an object is related to a spring constant and the distance that object is deformed. Research into stiffness in the human body is undergoing unprecedented popularity; possibly because stiffness has been associated with sporting performance and some lower limb injuries. However, some inconsistencies surrounding stiffness measurement exists bringing into question the integrity of some research related to stiffness. The aim of this study was to review literature which describes how vertical, leg and knee stiffness has been measured in adult populations while running, jumping or hopping. A search of the entire MEDLINE, PubMed and SPORTDiscus databases and an iterative reference check was performed. Sixty-seven articles were retrieved; 21 measured vertical stiffness, 51 measured leg stiffness, and 22 measured knee stiffness. Thus, some studies measured several 'types' of stiffness. Vertical stiffness was typically the quotient of ground reaction force and centre of mass displacement. For leg stiffness it was and change in leg length, and for the knee it was the quotient of knee joint moments and change in joint angle. Sample size issues and measurement techniques were identified as limitations to current research.

Vertical Diaphragm Electrostatic Actuator for a High Density Ink Jet Printer Head

NASA Astrophysics Data System (ADS)

Norimatsu, Takayuki; Tanaka, Shuji; Esashi, Masayoshi

This paper describes the design, fabrication process and preliminary evaluation of an electrostatic ink jet printer head with vertical diaphragms in deep trenches. By adopting the novel structure where an ink cavity is surrounded by the vertical diaphragm, the footprint of each unit (40 μm × 500 μm) becomes approximately one fifth as small as that of a conventional one. Such small footprint is advantageous in cost, resolution and printing speed. To make the vertical diaphragms, a 0.5 μm thick sacrificial thermally-oxidized layer and a 4.5 μm thick poly-silicon layer are sequentially formed in deep-reactive-ion-etched trenches, and then the sacrificial layer is etched away by fluoric acid. The nozzles are fabricated on a Pyrex glass substrate by femtosecond laser ablation, and the nozzle outside is covered with a water repellant Au/Pt/Ti layer. Impedance measurement found that the electrostatic gaps were in contact or closely approaching. This could be because the diaphragms buckled by compressive stress induced in low pressure chemical vapor deposition (LPCVD). Ink ejection was tried using commercially-available blue ink, but failed. The nozzles were covered with the ink, because the water repellant finish of the nozzle outside was not good.

Algebraic motion of vertically displacing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pfefferle, D.; Bhattacharjee, A.

In this paper, the vertical motion of a tokamak plasma is analytically modelled during its non-linear phase by a free-moving current-carrying rod inductively coupled to a set of fixed conducting wires or a cylindrical conducting shell. The solutions capture the leading term in a Taylor expansion of the Green's function for the interaction between the plasma column and the surrounding vacuum vessel. The plasma shape and profiles are assumed not to vary during the vertical drifting phase such that the plasma column behaves as a rigid body. In the limit of perfectly conducting structures, the plasma is prevented to comemore » in contact with the wall due to steep effective potential barriers created by the induced Eddy currents. Resistivity in the wall allows the equilibrium point to drift towards the vessel on the slow timescale of flux penetration. The initial exponential motion of the plasma, understood as a resistive vertical instability, is succeeded by a non-linear “sinking” behaviour shown to be algebraic and decelerating. Finally, the acceleration of the plasma column often observed in experiments is thus concluded to originate from an early sharing of toroidal current between the core, the halo plasma, and the wall or from the thermal quench dynamics precipitating loss of plasma current.« less

Infrasonic ray tracing applied to small-scale atmospheric structures: thermal plumes and updrafts/downdrafts.

PubMed

Jones, R Michael; Bedard, Alfred J

2015-02-01

A ray-tracing program is used to estimate the refraction of infrasound by the vertical structure of the atmosphere in thermal plumes, showing only weak effects, as well as in updrafts and downdrafts, which can act as vertical wave guides. Thermal plumes are ubiquitous features of the daytime atmospheric boundary layer. The effects of thermal plumes on lower frequency sound propagation are minor with the exception of major events, such as volcanoes, forest fires, or industrial explosions where quite strong temperature gradients are involved. On the other hand, when strong, organized vertical flows occur (e.g., in mature thunderstorms and microbursts), there are significant effects. For example, a downdraft surrounded by an updraft focuses sound as it travels upward, and defocuses sound as it travels downward. Such propagation asymmetry may help explain observations that balloonists can hear people on the ground; but conversely, people on the ground cannot hear balloonists aloft. These results are pertinent for those making surface measurements from acoustic sources aloft, as well as for measurements of surface sound sources using elevated receivers.

Improving Parameterization of Entrainment Rate for Shallow Convection with Aircraft Measurements and Large-Eddy Simulation

DOE PAGES

Lu, Chunsong; Liu, Yangang; Zhang, Guang J.; ...

2016-02-01

This work examines the relationships of entrainment rate to vertical velocity, buoyancy, and turbulent dissipation rate by applying stepwise principal component regression to observational data from shallow cumulus clouds collected during the Routine AAF [Atmospheric Radiation Measurement (ARM) Aerial Facility] Clouds with Low Optical Water Depths (CLOWD) Optical Radiative Observations (RACORO) field campaign over the ARM Southern Great Plains (SGP) site near Lamont, Oklahoma. The cumulus clouds during the RACORO campaign simulated using a large eddy simulation (LES) model are also examined with the same approach. The analysis shows that a combination of multiple variables can better represent entrainment ratemore » in both the observations and LES than any single-variable fitting. Three commonly used parameterizations are also tested on the individual cloud scale. A new parameterization is therefore presented that relates entrainment rate to vertical velocity, buoyancy and dissipation rate; the effects of treating clouds as ensembles and humid shells surrounding cumulus clouds on the new parameterization are discussed. Physical mechanisms underlying the relationships of entrainment rate to vertical velocity, buoyancy and dissipation rate are also explored.« less

Point Cloud Analysis for Uav-Borne Laser Scanning with Horizontally and Vertically Oriented Line Scanners - Concept and First Results

NASA Astrophysics Data System (ADS)

Weinmann, M.; Müller, M. S.; Hillemann, M.; Reydel, N.; Hinz, S.; Jutzi, B.

2017-08-01

In this paper, we focus on UAV-borne laser scanning with the objective of densely sampling object surfaces in the local surrounding of the UAV. In this regard, using a line scanner which scans along the vertical direction and perpendicular to the flight direction results in a point cloud with low point density if the UAV moves fast. Using a line scanner which scans along the horizontal direction only delivers data corresponding to the altitude of the UAV and thus a low scene coverage. For these reasons, we present a concept and a system for UAV-borne laser scanning using multiple line scanners. Our system consists of a quadcopter equipped with horizontally and vertically oriented line scanners. We demonstrate the capabilities of our system by presenting first results obtained for a flight within an outdoor scene. Thereby, we use a downsampling of the original point cloud and different neighborhood types to extract fundamental geometric features which in turn can be used for scene interpretation with respect to linear, planar or volumetric structures.

Mt. Pinatubo Volcano - Post Eruption, Luzon, Philippines

NASA Image and Video Library

1992-08-08

Mt. Pinatubo on the island of Luzon (15.0N, 120.0E) erupted catastrophically in June 1991 after over 600 years of inactivity. In this vertical view, the full extent of the eruption is obvious. Thick layers of ash completely surrounds the crater and the effect of mudflows in this previously heavily forested and agricultural region can be traced as ribbons flowing downhill. Clark AFB, once the crossroads of the SW Pacific can only partially be seen.

Russia After Putin

DTIC Science & Technology

2014-05-01

was operating in the dark surrounded by “yes men.” Granted it would take time, but the handwriting was on the wall; the days of the Power Vertical...ideas across the entire expanse of the FSU. . . . Needless to say , the war on the Internet and independent media outlets presently underway in Russia...Russia’s Far East Remains ‘More Dead than Alive’ Experts Say ,” Window on Eurasia, December 2, 2012. He notes that “within a radius of 1,000 kilometers

3D Modeling of Iran and Surrounding Areas From Simultaneous Inversion of Multiple Geophysical Datasets

DTIC Science & Technology

2010-09-01

which are primarily sensitive to upper crustal structures, are difficult to measure and especially true in tectonically and geologically complex areas...slice through the model (compare Figure 6 and Figure 9). The fit to the receiver function is not perfect and the spread of the slower deep crustal ...Although the final fit is certainly not perfect, note the improvement in timing of the main crustal conversion and reverberation (vertical lines) from the

External and internal facial features modulate processing of vertical but not horizontal spatial relations.

PubMed

Meinhardt, Günter; Kurbel, David; Meinhardt-Injac, Bozana; Persike, Malte

2018-03-22

Some years ago an asymmetry was reported for the inversion effect for horizontal (H) and vertical (V) relational face manipulations (Goffaux & Rossion, 2007). Subsequent research examined whether a specific disruption of long-range relations underlies the H/V inversion asymmetry (Sekunova & Barton, 2008). Here, we tested how detection of changes in interocular distance (H) and eye height (V) depends on cardinal internal features and external feature surround. Results replicated the H/V inversion asymmetry. Moreover, we found very different face cue dependencies for both change types. Performance and inversion effects did not depend on the presence of other face cues for detecting H changes. In contrast, accuracy for detecting V changes strongly depended on internal and external features, showing cumulative improvement when more cues were added. Inversion effects were generally large, and larger with external feature surround. The cue independence in detecting H relational changes indicates specialized local processing tightly tuned to the eyes region, while the strong cue dependency in detecting V relational changes indicates a global mechanism of cue integration across different face regions. These findings suggest that the H/V asymmetry of the inversion effect rests on an H/V anisotropy of face cue dependency, since only the global V mechanism suffers from disruption of cue integration as the major effect of face inversion. Copyright © 2018. Published by Elsevier Ltd.

Manipulating stereopsis and vergence in an outdoor setting: moon, sky and horizon.

PubMed

Enright, J T

1989-01-01

A simple stimulus generator has been constructed that permits a small illuminated target to be seen with variable inter-ocular disparity, when superimposed upon the binocular view of an outdoor landscape. This device was applied to several questions involving perception of size, distance and orientation, with the following results: (1) when the apparent distance to an "artificial moon", as perceived through stereopsis, is decreased by about 50-fold (from near horizon to about 60 m), its apparent size is reduced by only a miniscule amount (8% on average); hence, the moon illusion is probably not due to compensation--conscious or subconscious--for its apparent distance; (2) those changes in apparent size known as convergence micropsia vary as a function of the visual surround; for a vergence change of 1 deg, greater perceived change in size of a small target arises when a landscape is seen nearby than with empty sky as surround; (3) when a target is shown somewhat above the horizon against an empty sky, it must be viewed with divergence of the visual axes (image positions for "hyper-infinite" distance), in order to be perceived as vertically above objects on the skyline; this effect implies a strong backward tilt to the apparent vertical and probably reflects an attempt to "null out" the perceptual consequences of the convergence that typically occurs during downward saccades.

From Tls Survey to 3d Solid Modeling for Documentation of Built Heritage: the Case Study of Porta Savonarola in Padua

NASA Astrophysics Data System (ADS)

Guarnieri, A.; Fissore, F.; Masiero, A.; Vettore, A.

2017-08-01

It is a matter of fact that 3D visualisation and proper documentation of cultural objects helps to preserve the history and memories of historic buildings, archaeological sites and cultural landscapes, and supports economic growth by stimulating cultural tourism. Preservation, visualisation and recreation of valuable historical and architectural objects and places has always been a serious challenge for specialists in the field. Today, the rapid developments in the fields of close-range photogrammetry, terrestrial laser scanning (TLS) and computer vision (CV) enable to carry out highly accurate 3D models so as to be extremely effective and intuitive for users who have stringent requirements and high expectations. In this note we present the results of the survey and 3D modeling of an ancient gate, Porta Savonarola, located within the remains of the medieval town walls surrounding the historical city center of Padua, Italy. The work has been undertaken within the framework of the project "Walls Multimedia Museum" (WMM) promoted by the local private association "Padua Walls Committee". The goal of the project was to develop a prototype of an "extended" virtual museum, spreaded along most interesting locations of the town walls. The survey of the ancient gate was performed with a Leica C10 and P20 terrestrial laser scanners. Once the acquired scans were properly merged together, a solid model was generated from the global point cloud, and plans and elevations were extracted from it for restoration purposes. A short multimedia video was also created for the "Walls Multimedia Museum", showing both the outer and inner part of the gate. In the paper we will discuss all the steps and challenges addressed to provide the 3D solid model of Porta Savonarola from the TLS data.

Off-Ice Anaerobic Power Does Not Predict On-Ice Repeated Shift Performance in Hockey.

PubMed

Peterson, Ben J; Fitzgerald, John S; Dietz, Calvin C; Ziegler, Kevin S; Baker, Sarah E; Snyder, Eric M

2016-09-01

Peterson, BJ, Fitzgerald, JS, Dietz, CC, Ziegler, KS, Baker, SE, and Snyder, EM. Off-ice anaerobic power does not predict on-ice repeated shift performance in hockey. J Strength Cond Res 30(9): 2375-2381, 2016-Anaerobic power is a significant predictor of acceleration and top speed in team sport athletes. Historically, these findings have been applied to ice hockey although recent research has brought their validity for this sport into question. As ice hockey emphasizes the ability to repeatedly produce power, single bout anaerobic power tests should be examined to determine their ability to predict on-ice performance. We tested whether conventional off-ice anaerobic power tests could predict on-ice acceleration, top speed, and repeated shift performance. Forty-five hockey players, aged 18-24 years, completed anthropometric, off-ice, and on-ice tests. Anthropometric and off-ice testing included height, weight, body composition, vertical jump, and Wingate tests. On-ice testing consisted of acceleration, top speed, and repeated shift fatigue tests. Vertical jump (VJ) (r = -0.42; r = -0.58), Wingate relative peak power (WRPP) (r = -0.32; r = -0.43), and relative mean power (WRMP) (r = -0.34; r = -0.48) were significantly correlated (p ≤ 0.05) to on-ice acceleration and top speed, respectively. Conversely, none of the off-ice tests correlated with on-ice repeated shift performance, as measured by first gate, second gate, or total course fatigue; VJ (r = 0.06; r = 0.13; r = 0.09), WRPP (r = 0.06; r = 0.14; r = 0.10), or WRMP (r = -0.10; r = -0.01; r = -0.01). Although conventional off-ice anaerobic power tests predict single bout on-ice acceleration and top speed, they neither predict the repeated shift ability of the player, nor are good markers for performance in ice hockey.

Echo-Planar Imaging for a 9.4 Tesla Vertical-Bore Superconducting Magnet Using an Unshielded Gradient Coil

PubMed Central

KODAMA, Nao; KOSE, Katsumi

2016-01-01

Echo-planar imaging (EPI) sequences were developed for a 9.4 Tesla vertical standard bore (∼54 mm) superconducting magnet using an unshielded gradient coil optimized for live mice imaging and a data correction technique with reference scans. Because EPI requires fast switching of intense magnetic field gradients, eddy currents were induced in the surrounding metallic materials, e.g., the room temperature bore, and this produced serious artifacts on the EPI images. We solved the problem using an unshielded gradient coil set of proper size (outer diameter = 39 mm, inner diameter = 32 mm) with time control of the current rise and reference scans. The obtained EPI images of a phantom and a plant sample were almost artifact-free and demonstrated the promise of our approach. PMID:27001398

Rigorous derivation of the effective model describing a non-isothermal fluid flow in a vertical pipe filled with porous medium

NASA Astrophysics Data System (ADS)

Beneš, Michal; Pažanin, Igor

2018-03-01

This paper reports an analytical investigation of non-isothermal fluid flow in a thin (or long) vertical pipe filled with porous medium via asymptotic analysis. We assume that the fluid inside the pipe is cooled (or heated) by the surrounding medium and that the flow is governed by the prescribed pressure drop between pipe's ends. Starting from the dimensionless Darcy-Brinkman-Boussinesq system, we formally derive a macroscopic model describing the effective flow at small Brinkman-Darcy number. The asymptotic approximation is given by the explicit formulae for the velocity, pressure and temperature clearly acknowledging the effects of the cooling (heating) and porous structure. The theoretical error analysis is carried out to indicate the order of accuracy and to provide a rigorous justification of the effective model.

HOMOGENEOUS NUCLEAR REACTOR

DOEpatents

Hammond, R.P.; Busey, H.M.

1959-02-17

Nuclear reactors of the homogeneous liquid fuel type are discussed. The reactor is comprised of an elongated closed vessel, vertically oriented, having a critical region at the bottom, a lower chimney structure extending from the critical region vertically upwardly and surrounded by heat exchanger coils, to a baffle region above which is located an upper chimney structure containing a catalyst functioning to recombine radiolyticallydissociated moderator gages. In operation the liquid fuel circulates solely by convection from the critical region upwardly through the lower chimney and then downwardly through the heat exchanger to return to the critical region. The gases formed by radiolytic- dissociation of the moderator are carried upwardly with the circulating liquid fuel and past the baffle into the region of the upper chimney where they are recombined by the catalyst and condensed, thence returning through the heat exchanger to the critical region.

Effect of boundary treatments on quantum transport current in the Green's function and Wigner distribution methods for a nano-scale DG-MOSFET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang Haiyan; Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223-0001; Cai Wei

2010-06-20

In this paper, we conduct a study of quantum transport models for a two-dimensional nano-size double gate (DG) MOSFET using two approaches: non-equilibrium Green's function (NEGF) and Wigner distribution. Both methods are implemented in the framework of the mode space methodology where the electron confinements below the gates are pre-calculated to produce subbands along the vertical direction of the device while the transport along the horizontal channel direction is described by either approach. Each approach handles the open quantum system along the transport direction in a different manner. The NEGF treats the open boundaries with boundary self-energy defined by amore » Dirichlet to Neumann mapping, which ensures non-reflection at the device boundaries for electron waves leaving the quantum device active region. On the other hand, the Wigner equation method imposes an inflow boundary treatment for the Wigner distribution, which in contrast ensures non-reflection at the boundaries for free electron waves entering the device active region. In both cases the space-charge effect is accounted for by a self-consistent coupling with a Poisson equation. Our goals are to study how the device boundaries are treated in both transport models affects the current calculations, and to investigate the performance of both approaches in modeling the DG-MOSFET. Numerical results show mostly consistent quantum transport characteristics of the DG-MOSFET using both methods, though with higher transport current for the Wigner equation method, and also provide the current-voltage (I-V) curve dependence on various physical parameters such as the gate voltage and the oxide thickness.« less

Carbon nanotube and graphene device modeling and simulation

NASA Astrophysics Data System (ADS)

Yoon, Young Ki

The performance of the semiconductors has been improved and the price has gone down for decades. It has been continuously scaled down in size year by year, and now it encounters the fundamental scaling limit. We, therefore, should prepare a new era beyond the conventional semiconductor technologies. One of the most promising devices is possible by carbon nanotube (CNT) or graphene nanoribbon (GNR) in terms of its excellent charge transport properties. Their fundamental material properties and device physics are totally different to those of the conventional devices. In this nano-regime, more sophisticated device modeling and simulation are really needed to elucidate nano-device operation and to save our resources from errors. The numerical simulation works in this dissertation will provide novel view points on the emerging devices. In this dissertation, CNT and GNR devices are numerically studied. The first part of this work is on CNT devices, and a common structure of CNT device has CNT channel, metal source and drain contacts, and gate electrode. We investigate the strain, geometry, and scattering effects on the device performance of CNT field-effect transistors (FETs). It is shown that even a small amount of strain can result in a large effect on the performance of CNTFETs due to the variation of the bandgap and band-structure-limited velocity. A type of strain which produces a larger bandgap results in increased Schottky barrier (SB) height and decreased band-structure-limited velocity, and hence a smaller minimum leakage current, smaller on current, larger maximum achievable Ion/Ioff, and larger intrinsic delay. We also examine geometry effect of partial gate CNTFETs. In the growth process of vertical CNT, underlap between the gate and the bottom electrode is advantageous for transistor operation because it suppresses ambipolar conduction of SBFETs. Both n-type and p-type transistor operations with balanced performance metrics can be achieved on a single partial gate FET by using proper bias schemes. The effect of phonon scattering on the intrinsic delay and cut-off frequency of Schottky barrier CNTFETs is also examined. Carriers are mostly scattered by optical and zone boundary phonons beyond the beginning of the channel. The scattering has a small direct effect on the DC on current of the CNTFET, but it results in significant decrease of intrinsic cut-off frequency and increase of intrinsic delay. Semiconducting CNT is useful for the channel in CNTFETs, whereas metallic CNT can be used as an electrode. If a porous CNT film is used as a source electrode, vertical thin-film transistors (TFTs) can be constructed. Vertical organic FET (OFET) shows clear transistor switching behavior allowing orders of magnitude modulation of the source-drain current even in the presence of electrostatic screening by the source electrode. The channel length should be carefully engineered due to the trade-off between device characteristics in the subthreshold and above-threshold regions. The second subject is device simulations of GNRFETs. Even though GNR is also graphene-based quasi-1D nanostructure like CNT, the differences in shape, boundary condition, and existence of edges and dangling bonds make it operate in a different way. Atomistic 3D simulation study of the performance of GNR SBFETs is presented. The impacts of non-idealities on device performance have been investigated. The edges of GNR, which do not exist in CNT, can be advantages or disadvantages. If an appropriate control by different edge atoms is possible, it would be definitely positive. Totally new electronic band structure is obtained by different edge-termination atoms. In addition, only a fraction of impurity atom can also much affect on the material properties of GNR. In order to perform device simulations of non-uniform GNR devices, multiscale simulation scheme can be used in non-equilibrium Green's function (NEGF) formalism and density-functional method.

Spin transport in lateral structures with semiconducting channel

NASA Astrophysics Data System (ADS)

Zainuddin, Abu Naser

Spintronics is an emerging field of electronics with the potential to be used in future integrated circuits. Spintronic devices are already making their mark in storage technologies in recent times and there are proposals for using spintronic effects in logic technologies as well. So far, major improvement in spintronic effects, for example, the `spin-valve' effect, is being achieved in metals or insulators as channel materials. But not much progress is made in semiconductors owing to the difficulty in injecting spins into them, which has only very recently been overcome with the combined efforts of many research groups around the world. The key motivations for semiconductor spintronics are their ease in integration with the existing semiconductor technology along with the gate controllability. At present semiconductor based spintronic devices are mostly lateral and are showing a very poor performance compared to their metal or insulator based vertical counterparts. The objective of this thesis is to analyze these devices based on spin-transport models and simulations. At first a lateral spin-valve device is modeled with the spin-diffusion equation based semiclassical approach. Identifying the important issues regarding the device performance, a compact circuit equivalent model is presented which would help to improve the device design. It is found that the regions outside the current path also have a significant influence on the device performance under certain conditions, which is ordinarily neglected when only charge transport is considered. Next, a modified spin-valve structure is studied where the spin signal is controlled with a gate in between the injecting and detecting contacts. The gate is used to modulate the rashba spin-orbit coupling of the channel which, in turn, modulates the spin-valve signal. The idea of gate controlled spin manipulation was originally proposed by Datta and Das back in 1990 and is called 'Datta-Das' effect. In this thesis, we have extended the model described in the original proposal to include the influence of channel dimensions on the nature of electron flow and the contact dimensions on the magnitude and phase of the spin-valve signal. In order to capture the spin-orbit effect a non-equilibrium Green's function (NEGF) based quantum transport model for spin-valve device have been developed which is also explained with simple theoretical treatment based on stationary phase approximation. The model is also compared against a recent experiment that demonstrated such gate modulated spin-valve effect. This thesis also evaluates the possibility of gate controlled magnetization reversal or spin-torque effect as a means to validate this, so called, 'Datta-Das' effect on a more solid footing. Finally, the scope for utilizing topological insulator material in semiconductor spintronics is discussed as a possible future work for this thesis.

Optimized pulses for the control of uncertain qubits

DOE PAGES

Grace, Matthew D.; Dominy, Jason M.; Witzel, Wayne M.; ...

2012-05-18

The construction of high-fidelity control fields that are robust to control, system, and/or surrounding environment uncertainties is a crucial objective for quantum information processing. Using the two-state Landau-Zener model for illustrative simulations of a controlled qubit, we generate optimal controls for π/2 and π pulses and investigate their inherent robustness to uncertainty in the magnitude of the drift Hamiltonian. Next, we construct a quantum-control protocol to improve system-drift robustness by combining environment-decoupling pulse criteria and optimal control theory for unitary operations. By perturbatively expanding the unitary time-evolution operator for an open quantum system, previous analysis of environment-decoupling control pulses hasmore » calculated explicit control-field criteria to suppress environment-induced errors up to (but not including) third order from π/2 and π pulses. We systematically integrate this criteria with optimal control theory, incorporating an estimate of the uncertain parameter to produce improvements in gate fidelity and robustness, demonstrated via a numerical example based on double quantum dot qubits. For the qubit model used in this work, postfacto analysis of the resulting controls suggests that realistic control-field fluctuations and noise may contribute just as significantly to gate errors as system and environment fluctuations.« less

Death Don't Have No Mercy and Neither Does Calcium: Arabidopsis CYCLIC NUCLEOTIDE GATED CHANNEL2 and Innate Immunity[W

PubMed Central

Ali, Rashid; Ma, Wei; Lemtiri-Chlieh, Fouad; Tsaltas, Dimitrios; Leng, Qiang; von Bodman, Susannne; Berkowitz, Gerald A.

2007-01-01

Plant innate immune response to pathogen infection includes an elegant signaling pathway leading to reactive oxygen species generation and resulting hypersensitive response (HR); localized programmed cell death in tissue surrounding the initial infection site limits pathogen spread. A veritable symphony of cytosolic signaling molecules (including Ca2+, nitric oxide [NO], cyclic nucleotides, and calmodulin) have been suggested as early components of HR signaling. However, specific interactions among these cytosolic secondary messengers and their roles in the signal cascade are still unclear. Here, we report some aspects of how plants translate perception of a pathogen into a signal cascade leading to an innate immune response. We show that Arabidopsis thaliana CYCLIC NUCLEOTIDE GATED CHANNEL2 (CNGC2/DND1) conducts Ca2+ into cells and provide a model linking this Ca2+ current to downstream NO production. NO is a critical signaling molecule invoking plant innate immune response to pathogens. Plants without functional CNGC2 lack this cell membrane Ca2+ current and do not display HR; providing the mutant with NO complements this phenotype. The bacterial pathogen–associated molecular pattern elicitor lipopolysaccharide activates a CNGC Ca2+ current, which may be linked to NO generation due to buildup of cytosolic Ca2+/calmodulin. PMID:17384171

Death don't have no mercy and neither does calcium: Arabidopsis CYCLIC NUCLEOTIDE GATED CHANNEL2 and innate immunity.

PubMed

Ali, Rashid; Ma, Wei; Lemtiri-Chlieh, Fouad; Tsaltas, Dimitrios; Leng, Qiang; von Bodman, Susannne; Berkowitz, Gerald A

2007-03-01

Plant innate immune response to pathogen infection includes an elegant signaling pathway leading to reactive oxygen species generation and resulting hypersensitive response (HR); localized programmed cell death in tissue surrounding the initial infection site limits pathogen spread. A veritable symphony of cytosolic signaling molecules (including Ca(2+), nitric oxide [NO], cyclic nucleotides, and calmodulin) have been suggested as early components of HR signaling. However, specific interactions among these cytosolic secondary messengers and their roles in the signal cascade are still unclear. Here, we report some aspects of how plants translate perception of a pathogen into a signal cascade leading to an innate immune response. We show that Arabidopsis thaliana CYCLIC NUCLEOTIDE GATED CHANNEL2 (CNGC2/DND1) conducts Ca(2+) into cells and provide a model linking this Ca(2+) current to downstream NO production. NO is a critical signaling molecule invoking plant innate immune response to pathogens. Plants without functional CNGC2 lack this cell membrane Ca(2+) current and do not display HR; providing the mutant with NO complements this phenotype. The bacterial pathogen-associated molecular pattern elicitor lipopolysaccharide activates a CNGC Ca(2+) current, which may be linked to NO generation due to buildup of cytosolic Ca(2+)/calmodulin.

Investigation of injection molding of orthogonal fluidic connector for microfluidic devices

NASA Astrophysics Data System (ADS)

Xu, Zheng; Cao, Dong; Zhao, Wei; Song, Man-cang; Liu, Jun-shan

2017-02-01

Orthogonal fluidic connections are essential for developing multilayered microfluidic devices. At present, most orthogonal connectors are realized by a horizontal channel and a vertical channel in different plates. Therefore, some extra alignment and adhesion processes for precise plate assembly are required. In this paper, the method of injection molding is proposed to make a one-body-type orthogonal connector in a single plastic plate. The connector was composed of a cantilevered tube and the other in the substrate. An injection mold was developed in which a side core-pulling mechanism and an ejection mechanism of push-pipes were combined to form the mold for an orthogonal connector. Both the type and the location of gate were optimized for the mold. The results showed that the fan gate in the middle position of the plate was the most suitable in term of both defect control and practicability. The effect of melt temperature was numerically investigated and then verified experimentally. With the optimized parameters, the relative length and the relative wall thickness of a cantilevered tube in the plastic part can reach 98.89% and 99.80%, respectively. Furthermore, using the plastic part as a cover plate, a three-layer plastic microfluidic device was conveniently fabricated for electrochemical detection.

Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

PubMed

Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

2017-01-25

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

PubMed Central

Zhao, Y.; Wan, Z.; Xu, X.; Patil, S. R.; Hetmaniuk, U.; Anantram, M. P.

2015-01-01

Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. We find two distinct mechanisms that are responsible for NDR, depending on the gate and applied biases, in the same device. The origin of first mechanism is a Fabry-Pérot like interference and that of the second mechanism is an in-plane wave vector matching when the Dirac points of the electrodes align. The hBN layers can induce an asymmetry in the current-voltage characteristics which can be further modulated by an applied bias. We find that the electron-phonon scattering suppresses the first mechanism whereas the second mechanism remains relatively unaffected. We also show that the NDR features are tunable by varying device dimensions. The NDR feature with multiple resonant peaks, combined with ultrafast tunneling speed provides prospect for the graphene-hBN-graphene heterostructure in the high-performance electronics. PMID:25991076

Galactic Spiral Shocks with Thermal Instability in Vertically Stratified Disks

NASA Astrophysics Data System (ADS)

Kim, Chang-Goo; Kim, W.; Ostriker, E. C.

2010-01-01

Galactic spiral shocks are dominant morphological features and believed to be responsible for substructure formation of spiral arms in disk galaxies. They can also provide a large amount of kinetic energy for the interstellar gas by tapping the rotational energy. We use numerical hydrodynamic simulations to investigate dynamics and structure of spiral shocks with thermal instability in vertically stratified galactic disks. We initially consider an isothermal disk in vertical hydrostatic equilibrium and let it evolve under interstellar cooling and heating. Due to cooling and heating, the disk rapidly turns to a dense slab near the midplane surrounded by rarefied gas at high-altitude regions. The imposed stellar spiral potential develops a vertically curved shock that exhibits strong flapping motions along the direction perpendicular to the arm. The flows across the spiral shock are characterized by transitions from rarefied to dense phases at the shock and from dense to rarefied phases at the postshock expansion zone. The shock flapping motions stirs the disk, supplying the gas with random kinetic energy. For a model resembling the galactic disk near the solar neighborhood, the density-weighted vertical velocity dispersions are 2 km/s for the rarefied gas and 1 km/s for the dense gas. The shock compression in this model reduces an amount of the rarefied gas from 29% to 19% by mass. Despite the flapping motions, the time-averaged profiles of surface density are similar to those of the one-dimensional counterparts, and the vertical density distribution is overall consistent with effective hydrostatic equilibrium. When self-gravity is included, the shock compression forms large gravitationally bound condensations with virial ratio of about 2 and typical masses of 0.5 to one million solar masses, comparable to the Jeans mass.

Processing of proprioceptive and vestibular body signals and self-transcendence in Ashtanga yoga practitioners.

PubMed

Fiori, Francesca; David, Nicole; Aglioti, Salvatore M

2014-01-01

In the rod and frame test (RFT), participants are asked to set a tilted visual linear marker (i.e., a rod), embedded in a square, to the subjective vertical, irrespective of the surrounding frame. People not influenced by the frame tilt are defined as field-independent, while people biased in their rod verticality perception are field-dependent. Performing RFT requires the integration of proprioceptive, vestibular and visual signals with the latter accounting for field-dependency. Studies indicate that motor experts in body-related, balance-improving disciplines tend to be field-independent, i.e., better at verticality perception, suggesting that proprioceptive and vestibular expertise acquired by such exercise may weaken the influence of irrelevant visual signals. What remains unknown is whether the effect of body-related expertise in weighting perceptual information might also be mediated by personality traits, in particular those indexing self-focusing abilities. To explore this issue, we tested field-dependency in a class of body experts, namely yoga practitioners and in non-expert participants. Moreover we explored any link between performance on RFT and self-transcendence (ST), a complex personality construct, which refers to tendency to experience spiritual feelings and ideas. As expected, yoga practitioners (i) were more accurate in assessing the rod's verticality on the RFT, and (ii) expressed significantly higher ST. Interestingly, the performance in these two tests was negatively correlated. More specifically, when asked to provide verticality judgments, highly self-transcendent yoga practitioners were significantly less influenced by a misleading visual context. Our results suggest that being highly self-transcendent may enable yoga practitioners to optimize verticality judgment tasks by relying more on internal (vestibular and proprioceptive) signals coming from their own body, rather than on exteroceptive, visual cues.

Processing of proprioceptive and vestibular body signals and self-transcendence in Ashtanga yoga practitioners

PubMed Central

Fiori, Francesca; David, Nicole; Aglioti, Salvatore M.

2014-01-01

In the rod and frame test (RFT), participants are asked to set a tilted visual linear marker (i.e., a rod), embedded in a square, to the subjective vertical, irrespective of the surrounding frame. People not influenced by the frame tilt are defined as field-independent, while people biased in their rod verticality perception are field-dependent. Performing RFT requires the integration of proprioceptive, vestibular and visual signals with the latter accounting for field-dependency. Studies indicate that motor experts in body-related, balance-improving disciplines tend to be field-independent, i.e., better at verticality perception, suggesting that proprioceptive and vestibular expertise acquired by such exercise may weaken the influence of irrelevant visual signals. What remains unknown is whether the effect of body-related expertise in weighting perceptual information might also be mediated by personality traits, in particular those indexing self-focusing abilities. To explore this issue, we tested field-dependency in a class of body experts, namely yoga practitioners and in non-expert participants. Moreover we explored any link between performance on RFT and self-transcendence (ST), a complex personality construct, which refers to tendency to experience spiritual feelings and ideas. As expected, yoga practitioners (i) were more accurate in assessing the rod's verticality on the RFT, and (ii) expressed significantly higher ST. Interestingly, the performance in these two tests was negatively correlated. More specifically, when asked to provide verticality judgments, highly self-transcendent yoga practitioners were significantly less influenced by a misleading visual context. Our results suggest that being highly self-transcendent may enable yoga practitioners to optimize verticality judgment tasks by relying more on internal (vestibular and proprioceptive) signals coming from their own body, rather than on exteroceptive, visual cues. PMID:25278866

Vertical velocity in oceanic convection off tropical Australia

NASA Technical Reports Server (NTRS)

Lucas, Christopher; Zipser, Edward J.; Lemone, Margaret A.

1994-01-01

Time series of 1-Hz vertical velocity data collected during aircraft penetrations of oceanic cumulonimbus clouds over the western Pacific warm pool as part of the Equatorial Mesoscale Experiment (EMEX) are analyzed for updraft and downdraft events called cores. An updraft core is defined as occurring whenever the vertical velocity exceeds 1 m/sec for at least 500 m. A downdraft core is defined analogously. Over 19,000 km of straight and level flight legs are used in the analysis. Five hundred eleven updraft cores and 253 downdraft cores are included in the dataset. Core properties are summarized as distributions of average and maximum vertical velocity, diameter, and mass flux in four altitude intervals between 0.2 and 5.8 km. Distributions are approximately lognormal at all levels. Examination of the variation of the statistics with height suggests a maximum in vertical velocity between 2 and 3 km; slightly lower or equal vertical velocity is indicated at 5 km. Near the freezing level, virtual temperature deviations are found to be slightly positive for both updraft and downdraft cores. The excess in updraft cores is much smaller than that predicted by parcel theory. Comparisons with other studies that use the same analysis technique reveal that EMEX cores have approximately the same strength as cores of other oceanic areas, despite warmer sea surface temperatures. Diameter and mass flux are greater than those in the Global Atmospheric Research Program (GATE) but smaller than those in hurricane rainbands. Oceanic cores are much weaker and appear to be slightly smaller than those observed over land during the Thunderstorm Project. The markedly weaker oceanic vertical velocities below 5.8 km (compared to the continental cores) cannot be attributed to smaller total convective available potential energy or to very high water loading. Rather, it is suggested that water loading, although less than adiabatic, is more effective in reducing buoyancy of oceanic cores because of the smaller potential buoyancy below 5.8 km. Entrainment appears to be more effective in reducing buoyancy to well below adiabatic values in oceanic cores, a result consistent with the smaller oceanic core diameters in the lower cloud layer. It is speculated further that core diameters are related to boundary layer depth, which is clearly smaller over the oceans.

Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shao, Lei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab; Pipe, Kevin P.

2011-12-01

Using integrated interdigital transducers (IDTs), we demonstrate the emission of surface acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under certain bias conditions through dynamic screening of the HEMTs vertical field by modulation of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In addition to characterizing SAW emission during both gate-source and drain-source modulation, we demonstrate SAW detection by HEMTs. Integrated HEMT-IDT structures could enable real-time evaluation of epitaxial degradation as well as high-speed, amplified detection of SAWs.

Alignment of nematic liquid crystals by inhomogeneous surfaces

NASA Astrophysics Data System (ADS)

Ong, Hiap Liew; Hurd, Alan J.; Meyer, Robert B.

1985-01-01

Variable oblique alignment of nematic liquid crystals has been achieved on microscopically inhomogeneous surfaces. The surfaces consist of small patches favoring vertical (homeotropic) alignment surrounded by a matrix favoring a planar alignment. The construction of these surfaces employs randomly distributed microscopic metal islands formed by certain metals as vapor-deposited films. Larger scale periodic patterns were made as well to verify the techniques. The results are interpreted in terms of a continuum elasticity theory and azimuthal degeneracy is also discussed.

Two-dimensional potential flow past a smooth wall with partly constant curvature

NASA Technical Reports Server (NTRS)

Koppenfels, Werner Von

1941-01-01

The speed of a two-dimensional flow potential flow past a smooth wall, which evinces a finite curvature jump at a certain point and approximates to two arcs in the surrounding area, has a vertical tangent of inflection in the critical point as a function of the arc length of the boundary curve. This report looks at a general theorem of the local character of the conformal function at the critical point as well as the case of the finite curvature jump.

Raster and vector processing for scanned linework

USGS Publications Warehouse

Greenlee, David D.

1987-01-01

An investigation of raster editing techniques, including thinning, filling, and node detecting, was performed by using specialized software. The techniques were based on encoding the state of the 3-by-3 neighborhood surrounding each pixel into a single byte. A prototypical method for converting the edited raster linkwork into vectors was also developed. Once vector representations of the lines were formed, they were formatted as a Digital Line Graph, and further refined by deletion of nonessential vertices and by smoothing with a curve-fitting technique.

Real-Time Color-Doppler Guidance of HIFU for the Selective Avoidance or Occlusion of Blood Vessels

NASA Astrophysics Data System (ADS)

Rabkin, Brian A.; Zderic, Vesna; Vaezy, Shahram

2005-03-01

High-intensity focused ultrasound (HIFU) has been shown to effectively occlude blood vessels deep within tissue. The objective of the current study was to synchronize HIFU and color-Doppler ultrasound (US) for the real-time visualization of flow within blood vessels during HIFU treatment. The excitation of the HIFU was synchronized with the color-Doppler imager by collecting the excitation pulses of one of the elements of either a curved array intracavitary (C 9-5) or an intraoperative (CL 10-5) imaging probe. The collected excitation pulse was converted into a TTL-high pulse, which was delayed and gated to time the excitation duration and location of the HIFU pulse with respect to each imaging frame. The single pulse was used to drive a 3.2 MHz concave HIFU transducer (focal length of 3.5 cm, f-number 1) while the US imager was not collecting RF signals from the treatment region of the US image. The feasibility of the system was demonstrated in vivo by the selective ablation of tissue adjacent to, or the occlusion of, large vessels (including the femoral artery) both transcutaneously and interoperatively in the rabbit and pig. For the occlusion of vessels, the HIFU focus was placed immediately distal (with respect to the transducer) to the vessel at a depth of 2-2.5 cm. HIFU was applied at in situ intensities of 1000-2000 W/cm2, at a duty cycle of 50-75%, and a HIFU pulse repetition frequency (set by the US image frame rate) of 6-18 Hz. During each HIFU exposure, the HIFU pulse resulted in color interference bands running vertically within the color-Doppler window. Through the synchronization of the US imager with the HIFU excitation, the location and duration of the interference bands were set outside the treatment region within each image frame. This provided the operator with a clear view of the HIFU treatment site during therapy. Gross assessment showed necrosis of the tissue surrounding the HIFU treated vessel and occlusion of vessels up to 4 mm in diameter after a 30 s HIFU exposure. We have developed a method of synchronizing pulsed HIFU with color-Doppler US imaging for the real-time visualization of flow within blood vessels during HIFU therapy. This provides a means of guiding HIFU therapy for the detection and occlusion of deep vessels, or the selective ablation of tissue surrounding the vessels without vascular occlusion.

Aerial and Geophysical Archaeological Reconnaissance At Yangling, The Mausoleum of Emperor Jingdi In The Han Dynasty, China

NASA Astrophysics Data System (ADS)

Luo, Xizhe; Ye, Xinshi; Fassbinder, J. W. E.; Becker, H.

In 1998-2000, Shaanxi Province Conservation Bureau for Historical Monuments con- ducted an archaeology prospection research project at Yangling, Shaanxi province, China. Yangling, the mausoleum of Emperor Jingdi, is located about 20 kilometres northwest of the city of Xi'an. His mausoleum was constructed in the shape of a four- sided dipper or pyramid 31m high and 170m long each side, surrounded by a square wall of 401m along each side. Today the vestiges of the eastern, western and south- ern remains of the watchtowers previously on either side of gate can be clearly seen. Yangling took a long time to build and had the richest funeral objects. The Empress Wang died in 126 B.C. and also buried at Yangling to the northeastern side of Jingdi's tomb. The city of Yangling County was purposely built to the east of mausoleum. The officials, the rich and noble lived in the town, numbering over 100,000. Two groups of satellite tombs of imperial concubines, high officials and noble relations were dis- tributed over north and east part of the mausoleum, as well as tombs of convicts in the west. Inside the cemetery there were many palaces and houses inhabited by the tomb keepers and palace maids. Air photography, geophysical methods, remote sensing have been proved to be the most successful application in archaeological prospecting and surveying in recent years. In May 1998, we got several vertical images at a scale of 1:8000. Each im- age contains 30 photographs covering an area of 180km2 with an overlap of 65 In the autumn of 2000 about 2 hectares were surveyed with a Caesium magnetometer with a sensitivity of 0.01 Nanotesla (10 pT). This instrument was applied with duo- sensor configuration at 0.5 m traverse interval and 0.1 sec cycle, which corresponds to about 25 cm sample distance.

Observation of electron cloud instabilities and emittance dilution at the Cornell electron-positron Storage ring Test Accelerator

DOE PAGES

Holtzapple, R. L.; Billing, M. G.; Campbell, R. C.; ...

2016-04-11

Electron cloud related emittance dilution and instabilities of bunch trains limit the performance of high intensity circular colliders. One of the key goals of the Cornell electron-positron storage ring Test Accelerator (CesrTA) research program is to improve our understanding of how the electron cloud alters the dynamics of bunches within the train. Single bunch beam diagnostics have been developed to measure the beam spectra, vertical beam size, two important dynamical effects of beams interacting with the electron cloud, for bunch trains on a turn-by-turn basis. Experiments have been performed at CesrTA to probe the interaction of the electron cloud withmore » stored positron bunch trains. The purpose of these experiments was to characterize the dependence of beam-electron cloud interactions on the machine parameters such as bunch spacing, vertical chromaticity, and bunch current. The beam dynamics of the stored beam, in the presence of the electron cloud, was quantified using: 1) a gated beam position monitor (BPM) and spectrum analyzer to measure the bunch-by-bunch frequency spectrum of the bunch trains, 2) an x-ray beam size monitor to record the bunch-by-bunch, turn-by-turn vertical size of each bunch within the trains. In this study we report on the observations from these experiments and analyze the effects of the electron cloud on the stability of bunches in a train under many different operational conditions.« less

Observation of Electron Cloud Instabilities and Emittance Dilution at the Cornell Electron-Positron Storage Ring Test Accelerator

NASA Astrophysics Data System (ADS)

Holtzapple, R. L.; Billing, M. G.; Campbell, R. C.; Dugan, G. F.; Flanagan, J.; McArdle, K. E.; Miller, M. I.; Palmer, M. A.; Ramirez, G. A.; Sonnad, K. G.; Totten, M. M.; Tucker, S. L.; Williams, H. A.

2016-04-01

Electron cloud related emittance dilution and instabilities of bunch trains limit the performance of high intensity circular colliders. One of the key goals of the Cornell electron-positron storage ring Test Accelerator (CesrTA) research program is to improve our understanding of how the electron cloud alters the dynamics of bunches within the train. Single bunch beam diagnotics have been developed to measure the beam spectra, vertical beam size, two important dynamical effects of beams interacting with the electron cloud, for bunch trains on a turn-by-turn basis. Experiments have been performed at CesrTA to probe the interaction of the electron cloud with stored positron bunch trains. The purpose of these experiments was to characterize the dependence of beam-electron cloud interactions on the machine parameters such as bunch spacing, vertical chromaticity, and bunch current. The beam dynamics of the stored beam, in the presence of the electron cloud, was quantified using: 1) a gated beam position monitor (BPM) and spectrum analyzer to measure the bunch-by-bunch frequency spectrum of the bunch trains; 2) an x-ray beam size monitor to record the bunch-by-bunch, turn-by-turn vertical size of each bunch within the trains. In this paper we report on the observations from these experiments and analyze the effects of the electron cloud on the stability of bunches in a train under many different operational conditions.

Ocular tracking responses to background motion gated by feature-based attention.

PubMed

Souto, David; Kerzel, Dirk

2014-09-01

Involuntary ocular tracking responses to background motion offer a window on the dynamics of motion computations. In contrast to spatial attention, we know little about the role of feature-based attention in determining this ocular response. To probe feature-based effects of background motion on involuntary eye movements, we presented human observers with a balanced background perturbation. Two clouds of dots moved in opposite vertical directions while observers tracked a target moving in horizontal direction. Additionally, they had to discriminate a change in the direction of motion (±10° from vertical) of one of the clouds. A vertical ocular following response occurred in response to the motion of the attended cloud. When motion selection was based on motion direction and color of the dots, the peak velocity of the tracking response was 30% of the tracking response elicited in a single task with only one direction of background motion. In two other experiments, we tested the effect of the perturbation when motion selection was based on color, by having motion direction vary unpredictably, or on motion direction alone. Although the gain of pursuit in the horizontal direction was significantly reduced in all experiments, indicating a trade-off between perceptual and oculomotor tasks, ocular responses to perturbations were only observed when selection was based on both motion direction and color. It appears that selection by motion direction can only be effective for driving ocular tracking when the relevant elements can be segregated before motion onset. Copyright © 2014 the American Physiological Society.

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices

PubMed Central

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines. PMID:25763152

Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices.

PubMed

Farhadi, Rozita; Farhadi, Bita

2014-01-01

Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Faraday shield. The Faraday shield was implanted in order to replace the gate-field parasitic capacitor on the entry part of the device. Also, implanting the UIS was used in order to decrease the effect of parasitic bipolar junction transistor (BJT) of the VDMOS power transistor. The research tool used in this study was Silvaco software. By decreasing the transistor entry resistance in the optimized VDMOS structure, power losses and noise at the entry of the transistor were decreased, and, by increasing the breakdown voltage, the lifetime of the VDMOS transistor lifetime was increased, which resulted in increasing drain flow and decreasing Ron. This consequently resulted in enhancing the operation of high-frequency medical devices that use transistors, such as Radio Frequency (RF) and electrocardiograph machines.

Analysis and optimization of RC delay in vertical nanoplate FET

NASA Astrophysics Data System (ADS)

Woo, Changbeom; Ko, Kyul; Kim, Jongsu; Kim, Minsoo; Kang, Myounggon; Shin, Hyungcheol

2017-10-01

In this paper, we have analyzed short channel effects (SCEs) and RC delay with Vertical nanoplate FET (VNFET) using 3-D Technology computer-aided design (TCAD) simulation. The device is based on International Technology Road-map for Semiconductor (ITRS) 2013 recommendations, and it has initially gate length (LG) of 12.2 nm, channel thickness (Tch) of 4 nm, and spacer length (LSD) of 6 nm. To obtain improved performance by reducing RC delay, each dimension is adjusted (LG = 12.2 nm, Tch = 6 nm, LSD = 11.9 nm). It has each characteristic in this dimension (Ion/Ioff = 1.64 × 105, Subthreshold swing (S.S.) = 73 mV/dec, Drain-induced barrier lowering (DIBL) = 60 mV/V, and RC delay = 0.214 ps). Furthermore, with long shallow trench isolation (STI) length and thick insulator thickness (Ti), we can reduce RC delay from 0.214 ps to 0.163 ps. It is about a 23.8% reduction. Without decreasing drain current, there is a reduction of RC delay as reducing outer fringing capacitance (Cof). Finally, when source/drain spacer length is set to be different, we have verified RC delay to be optimum.

Optimal design of waveform digitisers for both energy resolution and pulse shape discrimination

NASA Astrophysics Data System (ADS)

Cang, Jirong; Xue, Tao; Zeng, Ming; Zeng, Zhi; Ma, Hao; Cheng, Jianping; Liu, Yinong

2018-04-01

Fast digitisers and digital pulse processing have been widely used for spectral application and pulse shape discrimination (PSD) owing to their advantages in terms of compactness, higher trigger rates, offline analysis, etc. Meanwhile, the noise of readout electronics is usually trivial for organic, plastic, or liquid scintillator with PSD ability because of their poor intrinsic energy resolution. However, LaBr3(Ce) has been widely used for its excellent energy resolution and has been proven to have PSD ability for alpha/gamma particles. Therefore, designing a digital acquisition system for such scintillators as LaBr3(Ce) with both optimal energy resolution and promising PSD ability is worthwhile. Several experimental research studies about the choice of digitiser properties for liquid scintillators have already been conducted in terms of the sampling rate and vertical resolution. Quantitative analysis on the influence of waveform digitisers, that is, fast amplifier (optional), sampling rates, and vertical resolution, on both applications is still lacking. The present paper provides quantitative analysis of these factors and, hence, general rules about the optimal design of digitisers for both energy resolution and PSD application according to the noise analysis of time-variant gated charge integration.

Historic Church of the Holy Cross in Kielce - Valuable Substance and Cultural Heritage in the Space of the Modern City

NASA Astrophysics Data System (ADS)

Gil-Mastalerczyk, Joanna

2017-10-01

In the frequently modified city fabrics, sacral architecture still plays an important role defining aspects of spatial forms and their compositional relations to the surroundings. The historic church of the Holy Cross in Kielce (1903-1939) has been a characteristic sight, a landmark and a contributing factor to the structure of the modern city. Large dimensions and dominant vertical shapes give a sturdy, recognizable form to the church architecture. The body of this Neogothic church, original and distinguishable from its surroundings, has been highly appreciated by the community members. The church provides an example of the aesthetics of the time in which it was built, it also documents changes in the people’s lives and attitudes. It shows Poland’s economic, legal and social transformation. The church has gained a status of one of the symbols of the city.

Safety harness

DOEpatents

Gunter, Larry W.

1993-01-01

A safety harness to be worn by a worker, especially a worker wearing a plastic suit thereunder for protection in a radioactive or chemically hostile environment, which safety harness comprises a torso surrounding portion with at least one horizontal strap for adjustably securing the harness about the torso, two vertical shoulder straps with rings just forward of the of the peak of the shoulders for attaching a life-line and a pair of adjustable leg supporting straps releasibly attachable to the torso surrounding portion. In the event of a fall, the weight of the worker, when his fall is broken and he is suspended from the rings with his body angled slightly back and chest up, will be borne by the portion of the leg straps behind his buttocks rather than between his legs. Furthermore, the supporting straps do not restrict the air supplied through hoses into his suit when so suspended.

Simulating Virtual Terminal Area Weather Data Bases for Use in the Wake Vortex Avoidance System (Wake VAS) Prediction Algorithm

NASA Technical Reports Server (NTRS)

Kaplan, Michael L.; Lin, Yuh-Lang

2004-01-01

During the research project, sounding datasets were generated for the region surrounding 9 major airports, including Dallas, TX, Boston, MA, New York, NY, Chicago, IL, St. Louis, MO, Atlanta, GA, Miami, FL, San Francico, CA, and Los Angeles, CA. The numerical simulation of winter and summer environments during which no instrument flight rule impact was occurring at these 9 terminals was performed using the most contemporary version of the Terminal Area PBL Prediction System (TAPPS) model nested from 36 km to 6 km to 1 km horizontal resolution and very detailed vertical resolution in the planetary boundary layer. The soundings from the 1 km model were archived at 30 minute time intervals for a 24 hour period and the vertical dependent variables as well as derived quantities, i.e., 3-dimensional wind components, temperatures, pressures, mixing ratios, turbulence kinetic energy and eddy dissipation rates were then interpolated to 5 m vertical resolution up to 1000 m elevation above ground level. After partial validation against field experiment datasets for Dallas as well as larger scale and much coarser resolution observations at the other 8 airports, these sounding datasets were sent to NASA for use in the Virtual Air Space and Modeling program. The application of these datasets being to determine representative airport weather environments to diagnose the response of simulated wake vortices to realistic atmospheric environments. These virtual datasets are based on large scale observed atmospheric initial conditions that are dynamically interpolated in space and time. The 1 km nested-grid simulated datasets providing a very coarse and highly smoothed representation of airport environment meteorological conditions. Details concerning the airport surface forcing are virtually absent from these simulated datasets although the observed background atmospheric processes have been compared to the simulated fields and the fields were found to accurately replicate the flows surrounding the airport where coarse verification data were available as well as where airport scale datasets were available.

Plutonium, americium, and uranium in blow-sand mounds of safety-shot sites at the Nevada Test Site and the Tonopah Test Range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essington, E.H.; Gilbert, R.O.; Wireman, D.L.

Blow-sand mounds or miniature sand dunes and mounds created by burrowing activities of animals were investigated by the Nevada Applied Ecology Group (NAEG) to determine the influence of mounds on plutonium, americium, and uranium distributions and inventories in areas of the Nevada Test Site and Tonopah Test Range. Those radioactive elements were added to the environment as a result of safety experiments of nuclear devices. Two studies were conducted. The first was to estimate the vertical distribution of americium in the blow-sand mounds and in the desert pavement surrounding the mounds. The second was to estimate the amount or concentrationmore » of the radioactive materials accumulated in the mound relative to the desert pavement. Five mound types were identified in which plutonium, americium, and uranium concentrations were measured: grass, shrub, complex, animal, and diffuse. The mount top (that portion above the surrounding land surface datum), the mound bottom (that portion below the mound to a depth of 5 cm below the surrounding land surface datum), and soil from the immediate area surrounding the mound were compared separately to determine if the radioactive elements had concentrated in the mounds. Results of the studies indicate that the mounds exhibit higher concentrations of plutonium, americium, and uranium than the immediate surrounding soil. The type of mound does not appear to have influenced the amount of the radioactive material found in the mound except for the animal mounds where the burrowing activities appear to have obliterated distribution patterns.« less

The Lunar Dust Pendulum

NASA Technical Reports Server (NTRS)

Kuntz, Kip; Collier, Michael R.; Stubbs, Timothy J.; Farrell, William M.

2011-01-01

Shadowed regions on the lunar surface acquire a negative potential. In particular, shadowed craters can have a negative potential with respect to the surrounding lunar regolith in sunlight, especially near the terminator regions. Here we analyze the motion of a positively charged lnnar dust grain in the presence of a shadowed crater at a negative potential in vacuum. Previous models describing the transport of charged lunar dust close to the surface have typically been limited to one-dimensional motion in the vertical direction, e.g. electrostatic levitation; however. the electric fields in the vicinity of shadowed craters will also have significant components in the horizontal directions. We propose a model that includes both the horizontal and vertical motion of charged dust grains near shadowed craters. We show that the dust grains execute oscillatory trajectories and present an expression for the period of oscillation drawing an analogy to the motion of a pendulum.

The Lunar Dust Pendulum

NASA Technical Reports Server (NTRS)

Collier, Michael R.; Stubbs, Timothy J.; Farrell, William M.

2011-01-01

Shadowed regions on the lunar surface acquire a negative potential. In particular, shadowed craters can have a negative potential with respect to the surrounding lunar regolith in sunlight, especially near the terminator regions. Here we analyze the motion of a positively charged lunar dust grain in the presence of a shadowed crater at a negative potential in vacuum. Previous models describing the transport of charged lunar dust close to the surface have typically been limited to one-dimensional motion in the vertical direction, e.g. electrostatic levitation; however, the electric fields in the vicinity of shadowed craters will also have significant components in the horizontal directions. We propose a model that includes both the horizontal and vertical motion of charged dust grains near shadowed craters. We show that the dust grains execute oscillatory trajectories and present an expression for the period of oscillation drawing an analogy to the motion of a pendulum.

Effect of Restorative Configurations and Occlusal Schemes on Strain Levels in Bone Surrounding Implants.

PubMed

Block, Jonathan; Matalon, Shlomo; Tanase, Gabriela; Ormianer, Zeev

2017-08-01

This study investigated strain levels during and after implant insertion, and during and after simulated mastication, in splinted and nonsplinted restorations with different occlusal schemes. Fresh bovine bone resembling type I jawbone was collected. Strain gauges were placed at each implant's neck, one horizontally and one vertically. Strains at and after implant insertion were recorded. The restoration was loaded with cyclic load simulating mastication. Loading and residual strains were recorded for 6 experimental loading types. At and after implant insertion, high horizontal strains were measured. Full splint loading presented higher vertical compared with horizontal strains (P < 0.05). Segmented cross-arch splint showed higher horizontal strains (P < 0.05). Premolar loading guidance presented the most favorable loading and residual strain results (P < 0.05). Splinting implant restorations may reduce strain levels at implant neck area and provide preferable strain distribution during cyclic loading.

Oval gradient coils for an open magnetic resonance imaging system with a vertical magnetic field.

PubMed

Matsuzawa, Koki; Abe, Mitsushi; Kose, Katsumi; Terada, Yasuhiko

2017-05-01

Existing open magnetic resonance imaging (MRI) systems use biplanar gradient coils for the spatial encoding of signals. We propose using novel oval gradient coils for an open vertical-field MRI. We designed oval gradients for a 0.3T open MRI system and showed that such a system could outperform a traditional biplanar gradient system while maintaining adequate gradient homogeneity and subject accessibility. Such oval gradient coils would exhibit high efficiency, low inductance and resistance, and high switching capability. Although the designed oval Y and Z coils showed more heat dissipation and less cooling capability than biplanar coils with the same gap, they showed an efficient heat-dissipation path to the surrounding air, which would alleviate the heat problem. The performance of the designed oval-coil system was demonstrated experimentally by imaging a human hand. Copyright © 2017 Elsevier Inc. All rights reserved.

How bees distinguish colors

PubMed Central

Horridge, Adrian

2015-01-01

Behind each facet of the compound eye, bees have photoreceptors for ultraviolet, green, and blue wavelengths that are excited by sunlight reflected from the surrounding panorama. In experiments that excluded ultraviolet, bees learned to distinguish between black, gray, white, and various colors. To distinguish two targets of differing color, bees detected, learned, and later recognized the strongest preferred inputs, irrespective of which target displayed them. First preference was the position and measure of blue reflected from white or colored areas. They also learned the positions and a measure of the green receptor modulation at vertical edges that displayed the strongest green contrast. Modulation is the receptor response to contrast and was summed over the length of a contrasting vertical edge. This also gave them a measure of angular width between outer vertical edges. Third preference was position and a measure of blue modulation. When they returned for more reward, bees recognized the familiar coincidence of these inputs at that place. They cared nothing for colors, layout of patterns, or direction of contrast, even at black/white edges. The mechanism is a new kind of color vision in which a large-field tonic blue input must coincide in time with small-field phasic modulations caused by scanning vertical edges displaying green or blue contrast. This is the kind of system to expect in medium-lowly vision, as found in insects; the next steps are fresh looks at old observations and quantitative models. PMID:28539792

Investigation of Possible Wellbore Cement Failures During Hydraulic Fracturing Operations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jihoon; Moridis, George

2014-11-01

We model and assess the possibility of shear failure, using the Mohr-Coulomb model ? along the vertical well by employing a rigorous coupled flow-geomechanic analysis. To this end, we vary the values of cohesion between the well casing and the surrounding cement to representing different quality levels of the cementing operation (low cohesion corresponds to low-quality cement and/or incomplete cementing). The simulation results show that there is very little fracturing when the cement is of high quality.. Conversely, incomplete cementing and/or weak cement can causes significant shear failure and the evolution of long fractures/cracks along the vertical well. Specifically, lowmore » cohesion between the well and cemented areas can cause significant shear failure along the well, but the same cohesion as the cemented zone does not cause shear failure. When the hydraulic fracturing pressure is high, low cohesion of the cement can causes fast propagation of shear failure and of the resulting fracture/crack, but a high-quality cement with no weak zones exhibits limited shear failure that is concentrated near the bottom of the vertical part of the well. Thus, high-quality cement and complete cementing along the vertical well appears to be the strongest protection against shear failure of the wellbore cement and, consequently, against contamination hazards to drinking water aquifers during hydraulic fracturing operations.« less

Exploration of Characteristics Governing Dynamics of Whirlwinds: Application to Dust Devils

NASA Astrophysics Data System (ADS)

Pandey, Sanjay Kumar; Maurya, Jagdish Prasad

2017-08-01

It is intended to model mathematically an ideal whirlwind which characterises this geo-physical phenomenon and eventually helps us decode the inherent dynamics. A dense cylindrical aerial mass is taken into consideration surrounding a rarer aerial region in order to keep a radial favourable gradient of pressure to sustain a rotational motion. It has been concluded that the whirlwind will survive as long as the low pressure region exists. The vertical pressure gradient also plays an equally important role. Since it is not connected to any cloud and the axial velocity is in the vertically upward direction, the momentary vertical gradient of pressure is required for its growth and survival. Horizontal ambient winds that rush towards low pressure zone, crush the air in the buffer zone, and turn vertically upward may also take the dust carried with them visibly to some height. It is considered that the angular azimuthal velocity varies within the annulus. An inference is that no whirlwind without a low pressure region within it can survive. This may be termed as the fundamental characteristic of whirlwind. It is further concluded that if the radial pressure difference between the outermost and innermost layers is larger, the whirlwind is thicker and consequently, it will last longer. Moreover, another conclusion arrived at is that the angular velocity will vanish if the inner radius is zero.

Open apex shaped charge-type explosive device having special disc means with slide surface thereon to influence movement of open apex shaped charge liner during collapse of same during detonation

DOEpatents

Murphy, Michael J.

1993-01-01

An open apex shape charge explosive device is disclosed having an inner liner defining a truncated cone, an explosive charge surrounding the truncated inner liner, a primer charge, and a disc located between the inner liner and the primer charge for directing the detonation of the primer charge around the end edge of the disc means to the explosive materials surrounding the inner liner. The disc comprises a material having one or more of: a higher compressive strength, a higher hardness, and/or a higher density than the material comprising the inner liner, thereby enabling the disc to resist deformation until the liner collapses. The disc has a slide surface thereon on which the end edge of the inner liner slides inwardly toward the vertical axis of the device during detonation of the main explosive surrounding the inner liner, to thereby facilitate the inward collapse of the inner liner. In a preferred embodiment, the geometry of the slide surface is adjusted to further control the collapse or .beta. angle of the inner liner.

Open apex shaped charge-type explosive device having special disc means with slide surface thereon to influence movement of open apex shaped charge liner during collapse of same during detonation

DOEpatents

Murphy, M.J.

1993-10-12

An open apex shape charge explosive device is disclosed having an inner liner defining a truncated cone, an explosive charge surrounding the truncated inner liner, a primer charge, and a disc located between the inner liner and the primer charge for directing the detonation of the primer charge around the end edge of the disc means to the explosive materials surrounding the inner liner. The disc comprises a material having one or more of: a higher compressive strength, a higher hardness, and/or a higher density than the material comprising the inner liner, thereby enabling the disc to resist deformation until the liner collapses. The disc has a slide surface thereon on which the end edge of the inner liner slides inwardly toward the vertical axis of the device during detonation of the main explosive surrounding the inner liner, to thereby facilitate the inward collapse of the inner liner. In a preferred embodiment, the geometry of the slide surface is adjusted to further control the collapse or [beta] angle of the inner liner. 12 figures.

Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

NASA Astrophysics Data System (ADS)

Wang, Jianfeng

This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate availability. Analysis of the worst days at six major airports in the summer of 2007 indicates that major gate-waiting delays are primarily due to operational disruptions---specifically, extended gate occupancy time, reduced gate availability and higher-than-scheduled arrival rate (usually due to arrival delay). Major gate-waiting delays are not a result of over-scheduling. The second part of this dissertation presents a simulation model to evaluate the impact of gate operational disruptions and gate-waiting-delay mitigation strategies, including building new gates, implementing common gates, using overnight off-gate parking and adopting self-docking gates. Simulation results show the following effects of disruptions: (i) The impact of arrival delay in a time window (e.g. 7 pm to 9 pm) on gate-waiting delay is bounded. (ii) The impact of longer-than-scheduled gate-occupancy times in a time window on gate-waiting delay can be unbounded and gate-waiting delay can increase linearly as the disruption level increases. (iii) Small reductions in gate availability have a small impact on gate-waiting delay due to slack gate capacity, while larger reductions have a non-linear impact as slack gate capacity is used up. Simulation results show the following effects of mitigation strategies: (i) Implementing common gates is an effective mitigation strategy, especially for airports with a flight schedule not dominated by one carrier, such as LGA. (ii) The overnight off-gate rule is effective in mitigating gate-waiting delay for flights stranded overnight following departure cancellations. This is especially true at airports where the gate utilization is at maximum overnight, such as LGA and DFW. The overnight off-gate rule can also be very effective to mitigate gate-waiting delay due to operational disruptions in evenings. (iii) Self-docking gates are effective in mitigating gate-waiting delay due to reduced gate availability.

Moho depth model for the Central Asian Orogenic Belt from satellite gravity gradients

NASA Astrophysics Data System (ADS)

Guy, Alexandra; Holzrichter, Nils; Ebbing, Jörg

2017-09-01

The main purpose of this study is to construct a new 3-D model of the Central Asian Orogenic Belt (CAOB) crust, which can be used as a starting point for future lithospheric studies. The CAOB is a Paleozoic accretionary orogen surrounded by the Siberian Craton to the north and the North China and Tarim Cratons to the south. This area is of great interest due to its enigmatic and still not completely understood geodynamic evolution. First, we estimate an initial crustal thickness by inversion of the vertical gravity component of the Gravity Field and Steady-State Ocean Circulation Explorer (GOCE) and DTU10 models. Second, 3-D forward modeling of the GOCE gravity gradients is performed, which determines the topography of the Moho, the geometry, and the density distribution of the deeper parts of the CAOB and its surroundings, taking into account the lateral and vertical density variations of the crust. The model is constrained by seismic refraction, reflection, and receiver function studies and geological studies. In addition, we discuss the isostatic implications of the differences between the seismic Moho and the resulting 3-D gravity Moho, complemented by the analysis of the lithostatic load distribution at the upper mantle level. Finally, the correlation between the contrasting tectonic domains and the thickness of the crust reveals the inheritance of Paleozoic and Mesozoic geodynamics, particularly the magmatic provinces and the orocline which preserve their crustal features.

The LHCb Vertex Locator Upgrade

NASA Astrophysics Data System (ADS)

Szumlak, T.

2017-12-01

The Large Hadron Collider beauty LHCb detector is a dedicated flavour physics experiment, designed to efficiently detect decays of b- and c-hadrons to perform precise studies of CP violation and rare decays. At the end of Run 2, many of the LHCb measurements will remain statistically dominated. In order to increase the trigger yield for purely hadronic channels, the hardware trigger will be removed, and the full detector will be read out at 40 MHz. This, in combination with the five-fold increase in luminosity necessitates radical changes to LHCb's electronics with entire subdetector replacements required in some cases. The Vertex Locator (VELO) surrounding the interaction region is used to reconstruct the proton-proton collision points (primary vertices) and decay vertices of long-lived particles (secondary vertices). The upgraded VELO will be equipped with silicon hybrid pixel sensors, each read out by VeloPix ASICs. The highest occupancy ASICs will have pixel hit rates of 900 Mhit/s and produce an output data rate of over 15 Gbit/s, with a total rate of 1.6 Tbit/s anticipated for the whole detector. Selected highlights of this challenging and ambitious project are described in this paper.

The importance of vertical buildings in perception and memorising the city

NASA Astrophysics Data System (ADS)

Alihodzic, Rifat; Zupančič, Domen

2018-03-01

Being aware of the surrounding we live in, among other things, means establishing of spatial relationships between oneself and the environment, equally important as relationship between oneself and others. Environment consists of facilities and space. Space, "gift by itself", is defined by terrain topography, sky horizon, plants and animals. The architecture, as a profession, is interested in space created distinctively. Perception, as elementary process of consciousness and psychological life, deals with being conscious about something. In this case, physical structures that create a city. Psychological experience of urban environment is important factor having effect on perception, memorising and orientation in urban space. Gestalt psychology of perceiving is area applying to and significant for architecture either. The importance of vertical lies in its perceiving the gravitation, forming perceiving focus, landmark, for urban units and subunits to be memorised, creating spatial hierarchy and perception logics, remembering and orientation in space. This work analyses reasons for building upright with comparative analyses in their participation in space and on human psychology. This paper's purpose is to, using fundamental facts, show the importance of vertical buildings, not as a spatial use phenomenon, but also as significant phenomenon.

Effective solidity in vertical axis wind turbines

NASA Astrophysics Data System (ADS)

Parker, Colin M.; Leftwich, Megan C.

2016-11-01

The flow surrounding vertical axis wind turbines (VAWTs) is investigated using particle imaging velocimetry (PIV). This is done in a low-speed wind tunnel with a scale model that closely matches geometric and dynamic properties tip-speed ratio and Reynolds number of a full size turbine. Previous results have shown a strong dependance on the tip-speed ratio on the wake structure of the spinning turbine. However, it is not clear whether this is a speed or solidity effect. To determine this, we have measured the wakes of three turbines with different chord-to-diameter ratios, and a solid cylinder. The flow is visualized at the horizontal mid-plane as well as the vertical mid-plane behind the turbine. The results are both ensemble averaged and phase averaged by syncing the PIV system with the rotation of the turbine. By keeping the Reynolds number constant with both chord and diameter, we can determine how each effects the wake structure. As these parameters are varied there are distinct changes in the mean flow of the wake. Additionally, by looking at the vorticity in the phase averaged profiles we can see structural changes to the overall wake pattern.

Initial Computations of Vertical Displacement Events with NIMROD

NASA Astrophysics Data System (ADS)

Bunkers, Kyle; Sovinec, C. R.

2014-10-01

Disruptions associated with vertical displacement events (VDEs) have potential for causing considerable physical damage to ITER and other tokamak experiments. We report on initial computations of generic axisymmetric VDEs using the NIMROD code [Sovinec et al., JCP 195, 355 (2004)]. An implicit thin-wall computation has been implemented to couple separate internal and external regions without numerical stability limitations. A simple rectangular cross-section domain generated with the NIMEQ code [Howell and Sovinec, CPC (2014)] modified to use a symmetry condition at the midplane is used to test linear and nonlinear axisymmetric VDE computation. As current in simulated external coils for large- R / a cases is varied, there is a clear n = 0 stability threshold which lies below the decay-index criterion for the current-loop model of a tokamak to model VDEs [Mukhovatov and Shafranov, Nucl. Fusion 11, 605 (1971)]; a scan of wall distance indicates the offset is due to the influence of the conducting wall. Results with a vacuum region surrounding a resistive wall will also be presented. Initial nonlinear computations show large vertical displacement of an intact simulated tokamak. This effort is supported by U.S. Department of Energy Grant DE-FG02-06ER54850.

The vertical structure and stability of accretion disks surrounding black holes and neutron stars

NASA Technical Reports Server (NTRS)

Milsom, J. A.; Chen, Xingming; Taam, Ronald E.

1994-01-01

The structure and stability of the inner regions of accretion disks surrounding neutron stars and black holes have been investigated. Within the framework of the alpha viscosity prescription for optically thick disks, we assume the viscous stress scales with gas pressure only, and the alpha parameter, which is less than or equal to unity, is formulated as alpha(sub 0)(h/r)(exp n), where h is the local scale height and n and alpha(sub 0) are constants. We neglect advective energy transport associated with radial motions and construct the vertical structure of the disks by assuming a Keplerian rotation law and local hydrostatic and thermal equilibrium. The vertical structures have been calculated with and without convective energy transport, and it has been demonstrated that convection is important especially for mass accretion rates, M-dot, greater than about 0.1 times the Eddington value, M-dot(sub Edd). Although the efficiency of convection is not high, convection significantly modifies the vertical structure of the disk (as compared with a purely radiative model) and leads to lower temperatures at a given M-dot. The results show that the disk can be locally unstable and that for n greater than or = 0.75, an S-shaped relation can exist between M-dot and the column density, sigma, at a given radius. While the lower stable branch (derivative of M-dot/derivative of sigma greater than 0) and middle unstable branch (derivative of M-dot/derivative of sigma less than 0) represent structures for which the gas and radiation pressure dominate respectively, the stable upper branch (derivative of M-dot/derivative of sigma greater than 0) is a consequence of the saturation of alpha. This saturation of alpha can occur for large alpha(sub 0) and at M-dot less than or = M-dot(sub Edd). The instability is found to occur at higher mass accretion rates for neutron stars than for black holes. In particular, the disk is locally unstable for M-dot greater than or = 0.5 M-dot(sub Edd) for neutron stars and for M-dot greater than or = M-dot(sub Edd) for black holes for a viscosity prescription characterized by n = 1 and alpha(sub 0) = 10.

Background in X-ray astronomy proportional counters

NASA Technical Reports Server (NTRS)

Bower, C. R.; Dietz, K. L.; Ramsey, B. D.; Weisskopf, M. C.

1991-01-01

The authors report the results of an investigation into the nature of background events in proportional counters sensitive to X-ray photons having energy of less than 150 keV. Even with the use of thick shields composed of high-atomic-number material, a significant flux background in the detector's energy region can result from multiple Compton scattering in the mass surrounding the active region of the detector. The importance of the selection of detector components in the reduction of the background by more than an order of magnitude is emphasized. Experimental results are shown to agree qualitatively with Monte Carlo simulations. It is concluded that escape gating is a powerful means of determining the nature of background in flight detectors: the single/pair ratios reveal whether the detected events are charged particles or photons.

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

49 CFR 234.255 - Gate arm and gate mechanism.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

Design of a low parasitic inductance SiC power module with double-sided cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Fei; Liang, Zhenxian; Wang, Fei

In this paper, a low-parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal performance. Both simulations and experiments are carried out to validate the design. Q3D simulation results show a power loop inductance of 1.63 nH, verified by the experiment, indicating more than 60% reduction of power loop inductance compared with the baseline module. With 0Ω external gate resistance turn-off at 600V, the voltage overshoot is less than 9% of the busmore » voltage at a load of 44.6A.« less

Challenges and payoff of composites in transport aircraft: 777 empennage and future applications

NASA Technical Reports Server (NTRS)

Quinlivan, John

1993-01-01

The Boeing 777 is the first of a new family of wide body airplanes. The new large twin is sized to accommodate 360 to 390 passengers in typical two-class configurations and planned growth beyond that. The 777 offers airlines three engine options, extremely attractive operating costs, and compatibility with existing airport gates and taxiways. The 777 has a wingspan of nearly 197 feet and is offered with a wing-tip folding mechanism that will reduce the span to 156 feet. Extensive use of advance composite is included in the 777. The application range from fiberglass fairing to primary structures. The 777 empennage includes vertical fin and a horizontal stabilizer. The material used for the empennage is a new, toughened epoxy materials. The material provides outstanding resistance to impact damage.

KSC-00padig058

NASA Image and Video Library

2000-10-31

KENNEDY SPACE CENTER, Fla. -- Inside the gate to Launch Pad 39B, Space Shuttle Endeavour and the Mobile Launcher Platform (MLP) start up the incline to the top of the pad. The crawler-transporter beneath the MLP, which moves the Shuttle at about 1 mph, has a leveling system designed to keep the top of the Space Shuttle vertical while negotiating the 5 percent grade leading to the top of the pad. Endeavour is scheduled to be launched Nov. 30 at 10:01 p.m. EST on mission STS-97, the sixth construction flight to the International Space Station. Its payload includes the P6 Integrated Truss Structure and a photovoltaic (PV) module, with giant solar arrays that will provide power to the Station. The mission includes two spacewalks to complete the solar array connections

APPLICATION OF STEEL PIPE PILE LOADING TESTS TO DESIGN VERIFICATION OF FOUNDATION OF THE TOKYO GATE BRIDGE

NASA Astrophysics Data System (ADS)

Saitou, Yutaka; Kikuchi, Yoshiaki; Kusakabe, Osamu; Kiyomiya, Osamu; Yoneyama, Haruo; Kawakami, Taiji

Steel sheet pipe pile foundations with large diameter steel pipe sheet pile were used for the foundation of the main pier of the Tokyo Gateway bridge. However, as for the large diameter steel pipe pile, the bearing mechanism including a pile tip plugging effect is still unclear due to lack of the practical examinations even though loading tests are performed on Trans-Tokyo Bay Highway. In the light of the foregoing problems, static pile loading tests both vertical and horizontal directions, a dynamic loading test, and cone penetration tests we re conducted for determining proper design parameters of the ground for the foundations. Design parameters were determined rationally based on the tests results. Rational design verification was obtained from this research.

Programmable diagnostic devices made from paper and tape.

PubMed

Martinez, Andres W; Phillips, Scott T; Nie, Zhihong; Cheng, Chao-Min; Carrilho, Emanuel; Wiley, Benjamin J; Whitesides, George M

2010-10-07

This paper describes three-dimensional microfluidic paper-based analytical devices (3-D microPADs) that can be programmed (postfabrication) by the user to generate multiple patterns of flow through them. These devices are programmed by pressing single-use 'on' buttons, using a stylus or a ballpoint pen. Pressing a button closes a small space (gap) between two vertically aligned microfluidic channels, and allows fluids to wick from one channel to the other. These devices are simple to fabricate, and are made entirely out of paper and double-sided adhesive tape. Programmable devices expand the capabilities of microPADs and provide a simple method for controlling the movement of fluids in paper-based channels. They are the conceptual equivalent of field-programmable gate arrays (FPGAs) widely used in electronics.

A Star Image Extractor for Small Satellites

NASA Astrophysics Data System (ADS)

Yamada, Yoshiyuki; Yamauchi, Masahiro; Gouda, Naoteru; Kobayashi, Yukiyasu; Tsujimoto, Takuji; Yano, Taihei; Suganuma, Masahiro; Nakasuka, Shinichi; Sako, Nobutada; Inamori, Takaya

We have developed a Star Image Extractor (SIE) which works as an on-board real-time image processor. It is a logic circuit written on an FPGA(Field Programmable Gate Array) device. It detects and extracts only an object data from raw image data. SIE will be required with the Nano-JASMINE 1) satellite. Nano-JASMINE is the small astrometry satellite that observes objects in our galaxy. It will be launched in 2010 and needs two years mission period. Nano-JASMINE observes an object with the TDI (Time Delayed Integration) observation mode. TDI is one of operation modes of CCD detector. Data is obtained, by rotating the imaging system including CCD at a rated synchronized with a vertical charge transfer of CCD. Obtained image data is sent through SIE to the Mission-controller.

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

PubMed Central

2014-01-01

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology. PMID:25057817

Stomatal Spacing Safeguards Stomatal Dynamics by Facilitating Guard Cell Ion Transport Independent of the Epidermal Solute Reservoir12[CC-BY

PubMed Central

Papanatsiou, Maria; Amtmann, Anna

2016-01-01

Stomata enable gaseous exchange between the interior of the leaf and the atmosphere through the stomatal pore. Control of the pore aperture depends on osmotic solute accumulation by, and its loss from the guard cells surrounding the pore. Stomata in most plants are separated by at least one epidermal cell, and this spacing is thought to enhance stomatal function, although there are several genera that exhibit stomata in clusters. We made use of Arabidopsis (Arabidopsis thaliana) stomatal patterning mutants to explore the impact of clustering on guard cell dynamics, gas exchange, and ion transport of guard cells. These studies showed that stomatal clustering in the Arabidopsis too many mouths (tmm1) mutant suppressed stomatal movements and affected CO2 assimilation and transpiration differentially between dark and light conditions and were associated with alterations in K+ channel gating. These changes were consistent with the impaired dynamics of tmm1 stomata and were accompanied by a reduced accumulation of K+ ions in the guard cells. Our findings underline the significance of spacing for stomatal dynamics. While stomatal spacing may be important as a reservoir for K+ and other ions to facilitate stomatal movements, the effects on channel gating, and by inference on K+ accumulation, cannot be explained on the basis of a reduced number of epidermal cells facilitating ion supply to the guard cells. PMID:27406168

A Five-Dimensional Mathematical Model for Regional and Global Changes in Cardiac Uptake and Motion

NASA Astrophysics Data System (ADS)

Pretorius, P. H.; King, M. A.; Gifford, H. C.

2004-10-01

The objective of this work was to simultaneously introduce known regional changes in contraction pattern and perfusion to the existing gated Mathematical Cardiac Torso (MCAT) phantom heart model. We derived a simple integral to calculate the fraction of the ellipsoidal volume that makes up the left ventricle (LV), taking into account the stationary apex and the moving base. After calculating the LV myocardium volume of the existing beating heart model, we employed the property of conservation of mass to manipulate the LV ejection fraction to values ranging between 13.5% and 68.9%. Multiple dynamic heart models that differ in degree of LV wall thickening, base-to-apex motion, and ejection fraction, are thus available for use with the existing MCAT methodology. To introduce more complex regional LV contraction and perfusion patterns, we used composites of dynamic heart models to create a central region with little or no motion or perfusion, surrounded by a region in which the motion and perfusion gradually reverts to normal. To illustrate this methodology, the following gated cardiac acquisitions for different clinical situations were simulated analytically: 1) reduced regional motion and perfusion; 2) same perfusion as in (1) without motion intervention; and 3) washout from the normal and diseased myocardial regions. Both motion and perfusion can change dynamically during a single rotation or multiple rotations of a simulated single-photon emission computed tomography acquisition system.

Method of aeration disinfecting and drying grain in bulk and pretreating seeds and a transverse blow silo grain dryer therefor

DOEpatents

Danchenko, Vitaliy G [Dnipropetrovsk, UA; Noyes, Ronald T [Stillwater, OK; Potapovych, Larysa P [Dnipropetrovsk, UA

2012-02-28

Aeration drying and disinfecting grain crops in bulk and pretreating seeds includes passing through a bulk of grain crops and seeds disinfecting and drying agents including an ozone and air mixture and surrounding air, subdividing the disinfecting and drying agents into a plurality of streams spaced from one another in a vertical direction, and passing the streams at different heights through levels located at corresponding heights of the bulk of grain crops and seeds transversely in a substantially horizontal direction.

Built-up outer wall and roofing sections for double walled envelope homes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brodhead, B.

1980-01-01

A site built system that uses the inner envelope wall is described. Blocking and vertical nailers are attached to this wall and sheathed with foil faced drywall to create the envelope cavity. An outer layer of 3 1/2 in. of Expended Poly Styrene provides continuous solid insulation. The trusses are also sheathed in foil faced drywall and insulated with 5 1/2 in. of E.P.S. This effectively surrounds the building with a continuous vapor and infiltration barrier. Construction details as well as cost breakdowns are presented.

Methane, Ethane, And Ethylene Laminar Counterflow Diffusion Flames At Elevated Pressures: Experimental And Computational Investigations Up To 2.0MPa

DTIC Science & Technology

2013-08-27

surrounded by annular shrouds that provide an inert curtain flow to minimize the influence of ambient gas on the reaction zone. The products of combustion...thermo- couple was mounted on an XY-stage that is controlled by stepper motors inside the pressure chamber. The probe is programmed to move vertically at...covering a total traverse dis- tance of 7 mm. The probe then approaches the flame from the top in a similar manner. This method was used to rule out

Wind Measurements from Arc Scans with Doppler Wind Lidar

DOE PAGES

Wang, H.; Barthelmie, R. J.; Clifton, Andy; ...

2015-11-25

When defining optimal scanning geometries for scanning lidars for wind energy applications, we found that it is still an active field of research. Our paper evaluates uncertainties associated with arc scan geometries and presents recommendations regarding optimal configurations in the atmospheric boundary layer. The analysis is based on arc scan data from a Doppler wind lidar with one elevation angle and seven azimuth angles spanning 30° and focuses on an estimation of 10-min mean wind speed and direction. When flow is horizontally uniform, this approach can provide accurate wind measurements required for wind resource assessments in part because of itsmore » high resampling rate. Retrieved wind velocities at a single range gate exhibit good correlation to data from a sonic anemometer on a nearby meteorological tower, and vertical profiles of horizontal wind speed, though derived from range gates located on a conical surface, match those measured by mast-mounted cup anemometers. Uncertainties in the retrieved wind velocity are related to high turbulent wind fluctuation and an inhomogeneous horizontal wind field. Moreover, the radial velocity variance is found to be a robust measure of the uncertainty of the retrieved wind speed because of its relationship to turbulence properties. It is further shown that the standard error of wind speed estimates can be minimized by increasing the azimuthal range beyond 30° and using five to seven azimuth angles.« less

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Modeling the ascent of sounding balloons: derivation of the vertical air motion

NASA Astrophysics Data System (ADS)

Gallice, A.; Wienhold, F. G.; Hoyle, C. R.; Immler, F.; Peter, T.

2011-06-01

A new model to describe the ascent of sounding balloons in the troposphere and lower stratosphere (up to ~30-35 km altitude) is presented. Contrary to previous models, detailed account is taken of both the variation of the drag coefficient with altitude and the heat imbalance between the balloon and the atmosphere. To compensate for the lack of data on the drag coefficient of sounding balloons, a reference curve for the relationship between drag coefficient and Reynolds number is derived from a dataset of flights launched during the Lindenberg Upper Air Methods Intercomparisons (LUAMI) campaign. The transfer of heat from the surrounding air into the balloon is accounted for by solving the radial heat diffusion equation inside the balloon. The potential applications of the model include the forecast of the trajectory of sounding balloons, which can be used to increase the accuracy of the match technique, and the derivation of the air vertical velocity. The latter is obtained by subtracting the ascent rate of the balloon in still air calculated by the model from the actual ascent rate. This technique is shown to provide an approximation for the vertical air motion with an uncertainty error of 0.5 m s-1 in the troposphere and 0.2 m s-1 in the stratosphere. An example of extraction of the air vertical velocity is provided in this paper. We show that the air vertical velocities derived from the balloon soundings in this paper are in general agreement with small-scale atmospheric velocity fluctuations related to gravity waves, mechanical turbulence, or other small-scale air motions measured during the SUCCESS campaign (Subsonic Aircraft: Contrail and Cloud Effects Special Study) in the orographically unperturbed mid-latitude middle troposphere.

Record Of Both Tectonic Related Vertical Motions and Global Sea Level Rise by Marine Terraces along an Active Arc Volcano. Example of Basse-Terre, Lesser Antilles (French West-Indies).

NASA Astrophysics Data System (ADS)

Fabre, M.; Moysan, M.; Graindorge, D.; Jean-Frederic, L.; Philippon, M. M.; Marcaillou, B.; Léticée, J. L.

2015-12-01

Volcano-tectonic history of the Caribbean plate provides direct insight onto the dynamic of the North American Plate westward subduction. Basse-Terre Island is a volcanic chain that belongs to the Lesser Antilles active volcanic arc with a southward decreasing age of volcanism from 3 Ma to present day.We investigate records of vertical motion along Basse-Terre through a morphostructural analysis of the Pleistocene-Holocene shallow-water carbonate platforms and associated terraces that surround Basse-Terre Island. This study is based on new high-resolution bathymetric and dense seismic data acquired during the GEOTREF oceanographic survey (2015, February). Our bathymetric and topographic Digital Terrain Model together with the "Litto3D" Lidar data (IGN/SHOM) images the island topography and the platform bathymetry to a depth of 200m with horizontal and vertical resolutions of 5m and ~cm respectively. This detailed study highlights the morphostructure of terraces built during the last transgression in order to identify and quantify their vertical motions. We analyze inherited morphology and structures of the forearc that affect the platform to discuss effects of the regional tectonics context. A particular emphasis is put on the influence of the NW-SE arc parallel transtensive Montserrat-Bouillante fault system onto the platform geometry. At last, the distribution of Basse-Terre terraces is compared with terraces distribution around other Lesser Antilles island and the Bahamas stable margin platform. We aim at discriminating the influence of the Pleistocene global sea-level rise from the one of tectonic vertical deformations.

Influence of different abutment diameter of implants on the peri-implant stress in the crestal bone: A three-dimensional finite element analysis--In vitro study.

PubMed

Aradya, Anupama; Kumar, U Krishna; Chowdhary, Ramesh

2016-01-01

The study was designed to evaluate and compare stress distribution in transcortical section of bone with normal abutment and platform switched abutment under vertical and oblique forces in posterior mandible region. A three-dimensional finite element model was designed using ANSYS 13.0 software. The type of bone selection for the model was made of type II mandibular bone, having cortical bone thickness ranging from 0.595 mm to 1.515 mm with the crestal region measuring 1.5 mm surrounding dense trabecular bone. The implant will be modulated at 5 mm restorative platform and tapering down to 4.5 mm wide at the threads, 13 mm long with an abutment 3 mm in height. The models will be designed for two situations: (1) An implant with a 5 mm diameter abutment representing a standard platform in the posterior mandible region. (2) An implant with a 4.5 mm diameter abutment representing platform switching in the posterior mandible region. Force application was performed in both oblique and vertical conditions using 100 N as a representative masticatory force. For oblique loading, a force of 100 N was applied at 15° from the vertical axis. von Mises stress analysis was evaluated. The results of the study showed cortical stress in the conventional and platform switching model under oblique forces were 59.329 MPa and 39.952 MPa, respectively. Cortical stress in the conventional and platform switching model under vertical forces was 13.914 MPa and 12.793 MPa, respectively. Results from this study showed the platform switched abutment led to relative decrease in von Mises stress in transcortical section of bone compared to normal abutment under vertical and oblique forces in posterior mandible region.

Temporal–Spatial Surface Seasonal Mass Changes and Vertical Crustal Deformation in South China Block from GPS and GRACE Measurements

PubMed Central

He, Meilin; Shen, Wenbin; Chen, Ruizhi; Ding, Hao; Guo, Guangyi

2017-01-01

The solid Earth deforms elastically in response to variations of surface atmosphere, hydrology, and ice/glacier mass loads. Continuous geodetic observations by Global Positioning System (CGPS) stations and Gravity Recovery and Climate Experiment (GRACE) record such deformations to estimate seasonal and secular mass changes. In this paper, we present the seasonal variation of the surface mass changes and the crustal vertical deformation in the South China Block (SCB) identified by GPS and GRACE observations with records spanning from 1999 to 2016. We used 33 CGPS stations to construct a time series of coordinate changes, which are decomposed by empirical orthogonal functions (EOFs) in SCB. The average weighted root-mean-square (WRMS) reduction is 38% when we subtract GRACE-modeled vertical displacements from GPS time series. The first common mode shows clear seasonal changes, indicating seasonal surface mass re-distribution in and around the South China Block. The correlation between GRACE and GPS time series is analyzed which provides a reference for further improvement of the seasonal variation of CGPS time series. The results of the GRACE observations inversion are the surface deformations caused by the surface mass change load at a rate of about −0.4 to −0.8 mm/year, which is used to improve the long-term trend of non-tectonic loads of the GPS vertical velocity field to further explain the crustal tectonic movement in the SCB and surroundings. PMID:29301236

Vertical air motion retrievals in deep convective clouds using the ARM scanning radar network in Oklahoma during MC3E

DOE Office of Scientific and Technical Information (OSTI.GOV)

North, Kirk W.; Oue, Mariko; Kollias, Pavlos

The US Department of Energy (DOE) Atmospheric Radiation Measurement (ARM) program's Southern Great Plains (SGP) site includes a heterogeneous distributed scanning Doppler radar network suitable for collecting coordinated Doppler velocity measurements in deep convective clouds. The surrounding National Weather Service (NWS) Next Generation Weather Surveillance Radar 1988 Doppler (NEXRAD WSR-88D) further supplements this network. Radar velocity measurements are assimilated in a three-dimensional variational (3DVAR) algorithm that retrieves horizontal and vertical air motions over a large analysis domain (100 km × 100 km) at storm-scale resolutions (250 m). For the first time, direct evaluation of retrieved vertical air velocities with thosemore » from collocated 915 MHz radar wind profilers is performed. Mean absolute and root-mean-square differences between the two sources are of the order of 1 and 2 m s -1, respectively, and time–height correlations are of the order of 0.5. An empirical sensitivity analysis is done to determine a range of 3DVAR constraint weights that adequately satisfy the velocity observations and anelastic mass continuity. It is shown that the vertical velocity spread over this range is of the order of 1 m s -1. The 3DVAR retrievals are also compared to those obtained from an iterative upwards integration technique. Lastly, the results suggest that the 3DVAR technique provides a robust, stable solution for cases in which integration techniques have difficulty satisfying velocity observations and mass continuity simultaneously.« less

Vertical air motion retrievals in deep convective clouds using the ARM scanning radar network in Oklahoma during MC3E

DOE PAGES

North, Kirk W.; Oue, Mariko; Kollias, Pavlos; ...

2017-08-04

The US Department of Energy (DOE) Atmospheric Radiation Measurement (ARM) program's Southern Great Plains (SGP) site includes a heterogeneous distributed scanning Doppler radar network suitable for collecting coordinated Doppler velocity measurements in deep convective clouds. The surrounding National Weather Service (NWS) Next Generation Weather Surveillance Radar 1988 Doppler (NEXRAD WSR-88D) further supplements this network. Radar velocity measurements are assimilated in a three-dimensional variational (3DVAR) algorithm that retrieves horizontal and vertical air motions over a large analysis domain (100 km × 100 km) at storm-scale resolutions (250 m). For the first time, direct evaluation of retrieved vertical air velocities with thosemore » from collocated 915 MHz radar wind profilers is performed. Mean absolute and root-mean-square differences between the two sources are of the order of 1 and 2 m s -1, respectively, and time–height correlations are of the order of 0.5. An empirical sensitivity analysis is done to determine a range of 3DVAR constraint weights that adequately satisfy the velocity observations and anelastic mass continuity. It is shown that the vertical velocity spread over this range is of the order of 1 m s -1. The 3DVAR retrievals are also compared to those obtained from an iterative upwards integration technique. Lastly, the results suggest that the 3DVAR technique provides a robust, stable solution for cases in which integration techniques have difficulty satisfying velocity observations and mass continuity simultaneously.« less

Sensory Processing Dysfunction in the Personal Experience and Neuronal Machinery of Schizophrenia

PubMed Central

Javitt, Daniel C.; Freedman, Robert

2015-01-01

Sensory processing deficits, first investigated by Kraeplin and Bleuler as possible pathophysiological mechanisms in schizophrenia, are now being re-characterized in the context of modern understanding of the involved molecular and neurobiological brain mechanisms. The National Institute of Mental Health Research Domain Criteria position these deficits as intermediaries between molecular and cellular mechanisms and clinical symptoms of schizophrenia such as hallucinations. The pre-pulse inhibition of startle responses by a weaker preceding tone, the inhibitory gating of response to paired sensory stimuli characterized using the auditory P50 evoked response, and the detection of slightly different stimuli that elicits the cortical Mismatch Negativity potential demonstrate deficits in early sensory processing mechanisms, whose molecular and neurobiological bases are increasingly well understood. Deficits in sensory processing underlie more complex cognitive dysfunction and, vice versa, are affected by higher-level cognitive difficulties. These deficits are now being used to identify genes involved in familial transmission of the illness and to monitor potentially therapeutic drug effects for both treatment and prevention. This research also provides a clinical reminder that patients’ sensory perception of the surrounding world, even during treatment sessions, may differ considerable from others’ perceptions. A person’s ability to understand and interact effectively with surrounding world ultimately depends upon an underlying sensory experience of it. PMID:25553496

SU-G-BRA-15: Dosimetric Evaluation of Dynamic Tumor Tracking Radiation Therapy Using Digital Phantom: A Study On Margin and Desired Accuracy of Tracking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uchida, T; Osanai, M; Homma, N

2016-06-15

Purpose: Dynamic tumor tracking radiation therapy can potentially reduce internal margin without prolongation of irradiation time. However, dynamic tumor tracking technique requires an extra margin (tracking margin, TM) for the uncertainty of tumor localization, prediction, and beam repositioning. The purpose of this study was to evaluate a dosimetric impact caused by TM. Methods: We used 4D XCAT to create 9 digital phantom datasets of different tumor size and motion range: tumor diameter TD=(1, 3, 5) cm and motion range MR=(1, 2, 3) cm. For each dataset, respiratory gating (30%–70% phase) and tumor tracking treatment plans were created using 8-field 3D-CRTmore » by 4D dose calculation implemented in RayStation. The dose constraint was based on RTOG0618. For the tracking plan, TMs of (0, 2.5, 5) mm were considered by surrounding a normal setup margin: SM=5 mm. We calculated V20 of normal lung to evaluate the dosimetric impact for each case, and estimated an equivalent TM that affects the same impact on V20 obtained by the gated plan. Results: The equivalent TMs for (TD=1 cm, MR=2 cm), (TD=1 cm, MR=3 cm), (TD=5 cm, MR=2 cm), and (TD=5 cm, MR=3 cm) were estimated as 1.47 mm, 3.95 mm, 1.04 mm, and 2.13 mm, respectively. The larger the tumor size, the equivalent TM became smaller. On the other hand, the larger the motion range, the equivalent TM was found to be increased. Conclusion: Our results showed the equivalent TM changes depending on tumor size and motion range. The tracking plan with TM less than the equivalent TM achieves a dosimetric impact better than the gated plan in less treatment time. This study was partially supported by JSPS Kakenhi and Varian Medical Systems.« less

Comparison of electron-beam and ungated helical CT in detecting coronary arterial calcification by using a working heart phantom and artificial coronary arteries.

PubMed

Hopper, Kenneth D; Strollo, Diane C; Mauger, David T

2002-02-01

To determine the sensitivity and specificity of cardiac gated electron-beam computed tomography (CT) and ungated helical CT in detecting and quantifying coronary arterial calcification (CAC) by using a working heart phantom and artificial coronary arteries. A working heart phantom simulating normal cardiac motion and providing attenuation equal to that of an adult thorax was used. Thirty tubes with a 3-mm inner diameter were internally coated with pulverized human cortical bone mixed with epoxy glue to simulate minimal (n = 10), mild (n = 10), or severe (n = 10) calcified plaques. Ten additional tubes were not coated and served as normal controls. The tubes were attached to the same location on the phantom heart and scanned with electron-beam CT and helical CT in horizontal and vertical planes. Actual plaque calcium content was subsequently quantified with atopic spectroscopy. Two blinded experienced radiologic imaging teams, one for each CT system, separately measured calcium content in the model vessels by using a Hounsfield unit threshold of 130 or greater. The sensitivity and specificity of electron-beam CT in detecting CAC were 66.1% and 80.0%, respectively. The sensitivity and specificity of helical CT were 96.4% and 95.0%, respectively. Electron-beam CT was less reliable when vessels were oriented vertically (sensitivity and specificity, 71.4% and 70%; 95% CI: 39.0%, 75.0%) versus horizontally (sensitivity and specificity, 60.7% and 90.0%; 95% CI: 48.0%, 82.0%). When a correction factor was applied, the volume of calcified plaque was statistically better quantified with helical CT than with electron-beam CT (P =.004). Ungated helical CT depicts coronary arterial calcium better than does gated electron-beam CT. When appropriate correction factors are applied, helical CT is superior to electron-beam CT in quantifying coronary arterial calcium. Although further work must be done to optimize helical CT grading systems and scanning protocols, the data of this study demonstrated helical CT's inherent advantage over currently commercially available electron-beam CT systems in CAC detection and quantification.

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Lee, Changhee; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil-Ho

2018-06-25

Two-dimensional (2D) materials based heterostructures provide a unique platform where interaction between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, operation of a van der Waals heterostructure device comprising of vertically stacked bi-layer MoS 2 and few layered WSe 2 has been demonstrated in which atomically thin MoS 2 layer has been employed as a tunneling layer to the underlying WSe 2 layer. In this way, simultaneous contacts to both MoS 2 and WSe 2 2D layers have been established by forming direct MS (metal semiconductor) to MoS 2 and tunneling based MIS (metal insulator semiconductor) contacts to WSe 2 , respectively. The use of MoS 2 as a dielectric tunneling layer results in improved contact resistance (80 kΩ-µm) for WSe 2 contact, which is attributed to reduction in effective Schottky barrier height and is also confirmed from the temperature dependent measurement. Further, this unique contact engineering and type II band alignment between MoS 2 and WSe 2 enables a selective and independent carrier transport across the respective layers. This contact engineered dual channel heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated by the vertical electric field of the gate electrode, which is also reflected in on/off ratio of 10 4 for both electrons (MoS 2 ) and holes (WSe 2 ) channels. Moreover, the charge transfer at the heterointerface is studied quantitatively from the shift in the threshold voltage of the pristine MoS 2 and heterostructure device, which agrees with the carrier recombination induced optical quenching as observed in the Raman spectra of the pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid tunneling contacts and strong interlayer coupling can be utilized for high performance opto-electrical devices and applications.

Graphene as tunable contact for high performance thin film transistor

NASA Astrophysics Data System (ADS)

Liu, Yuan

Graphene has been one of the most extensively studied materials due to its unique band structure, the linear dispersion at the K point. It gives rise to novel phenomena, such as the anomalous quantum Hall effect, and has opened up a new category of "Fermi-Dirac" physics. Graphene has also attracted enormous attention for future electronics because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. However, graphene has zero intrinsic band gap, thus can not be used as the active channel material for logic transistors with sufficient on/off current ratio. Previous approaches to address this challenge include the induction of a transport gap in graphene nanostructures or bilayer graphene. However, these approaches have proved successful in improving the on-- off ratio of the resulting devices, but often at a severe sacrifice of the deliverable current density. Alternatively, with a finite density of states, tunable work-function and optical transparency, graphene can function as a unique tunable contact material to create a new structure of electronic devices. In this thesis, I will present my effort toward on-off ratio of graphene based vertical thin film transistor. I will include the work form four of my first author publication. I will first present my research studies on the a dramatic enhancement of the overall quantum efficiency and spectral selectivity of graphene photodetector, by coupling with plasmonic nanostructures. It is observed that metallic plasmonic nanostructures can be integrated with graphene photodetectors to greatly enhance the photocurrent and external quantum efficiency by up to 1,500%. Plasmonic nanostructures of variable resonance frequencies selectively amplify the photoresponse of graphene to light of different wavelengths, enabling highly specific detection of multicolours. Then I will show a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 105. The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. Furthermore, I will, demonstrate a new design strategy for vertical OTFT with ultra-short channel length without using conventional high-resolution lithography process. They can deliver a high current density over 1.8 A/ cm2 and thus enable a high cutoff frequency devices (~ 0.4 MHz) comparable with the ultra-short channel organic transistors. Importantly, with unique vertical architecture, the entire organic channel material is sandwiched between the source and drain electrodes and is thus naturally protected to ensure excellent air-stability. Finally I will present a new strategy by using graphene as the back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. For the first time, a transparent contact to MoS2 is demonstrated with zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm2/V s in MoS2 at low temperature. These findings can open up exciting new opportunities for atomically thin 2D semiconductors as well as other conventional semiconductors in general.

Reliability analysis for determining performance of barrage based on gates operation

NASA Astrophysics Data System (ADS)

Adiningrum, C.; Hadihardaja, I. K.

2017-06-01

Some rivers located on a flat slope topography such as Cilemahabang river and Ciherang river in Cilemahabang watershed, Bekasi regency, West Java are susceptible to flooding. The inundation mostly happens near a barrage in the middle and downstream of the Cilemahabang watershed, namely the Cilemahabang and Caringin barrages. Barrages or gated weirs are difficult to exploit since the gate must be kept and operated properly under any circumstances. Therefore, a reliability analysis of the gates operation is necessary to determine the performance of the barrage with respect to the number of gates opened and the gates opening heights. The First Order Second Moment (FOSM) method was used to determine the performance by the reliability index (β) and the probability of failure (risk). It was found that for Cilemahabang Barrage, the number of gates opened with load (L) represents the peak discharge derived from various rainfall (P) respectively one gate with opening height (h=1m) for Preal, two gates (h=1m and h=1,5m) for P50, and three gates (each gate with h=2,5m) for P100. For Caringin Barrage, the results are minimum three gates opened (each gate with h=2,5 m) for Preal, five gates opened (each gate with h=2,5m) for P50, and six gates opened (each gate with h=2,5m) for P100. It can be concluded that a greater load (L) needs greater resistance (R) to counterbalance. Resistance can be added by increasing the number of gates opened and the gate opening height. A higher number of gates opened will lead to the decrease of water level in the upstream of barrage and less risk of overflow.

Microphysics of Clouds with the Relaxed Arakawa-Schubert Scheme (McRAS). Part I: Design and Evaluation with GATE Phase III Data.

NASA Astrophysics Data System (ADS)

Sud, Y. C.; Walker, G. K.

1999-09-01

A prognostic cloud scheme named McRAS (Microphysics of Clouds with Relaxed Arakawa-Schubert Scheme) has been designed and developed with the aim of improving moist processes, microphysics of clouds, and cloud-radiation interactions in GCMs. McRAS distinguishes three types of clouds: convective, stratiform, and boundary layer. The convective clouds transform and merge into stratiform clouds on an hourly timescale, while the boundary layer clouds merge into the stratiform clouds instantly. The cloud condensate converts into precipitation following the autoconversion equations of Sundqvist that contain a parametric adaptation for the Bergeron-Findeisen process of ice crystal growth and collection of cloud condensate by precipitation. All clouds convect, advect, as well as diffuse both horizontally and vertically with a fully interactive cloud microphysics throughout the life cycle of the cloud, while the optical properties of clouds are derived from the statistical distribution of hydrometeors and idealized cloud geometry.An evaluation of McRAS in a single-column model (SCM) with the Global Atmospheric Research Program Atlantic Tropical Experiment (GATE) Phase III data has shown that, together with the rest of the model physics, McRAS can simulate the observed temperature, humidity, and precipitation without discernible systematic errors. The time history and time mean in-cloud water and ice distribution, fractional cloudiness, cloud optical thickness, origin of precipitation in the convective anvils and towers, and the convective updraft and downdraft velocities and mass fluxes all simulate a realistic behavior. Some of these diagnostics are not verifiable with data on hand. These SCM sensitivity tests show that (i) without clouds the simulated GATE-SCM atmosphere is cooler than observed; (ii) the model's convective scheme, RAS, is an important subparameterization of McRAS; and (iii) advection of cloud water substance is helpful in simulating better cloud distribution and cloud-radiation interaction. An evaluation of the performance of McRAS in the Goddard Earth Observing System II GCM is given in a companion paper (Part II).

Approach to interfacial and intramolecular electron transfer of the diheme protein cytochrome c4 assembled on Au(111) surfaces.

PubMed

Chi, Qijin; Zhang, Jingdong; Arslan, Taner; Borg, Lotte; Pedersen, Gert W; Christensen, Hans E M; Nazmudtinov, Renat R; Ulstrup, Jens

2010-04-29

Intramolecular electron transfer (ET) between metal centers is a core feature of large protein complexes in photosynthesis, respiration, and redox enzyme catalysis. The number of microscopic redox potentials and ET rate constants is, however, prohibitive for experimental cooperative ET mapping, but two-center proteins are simple enough to offer complete communication networks. At the same time, multicenter redox proteins operate in membrane environments where conformational dynamics may lead to gated ET features different from conditions in homogeneous solution. The bacterial respiratory diheme protein Pseudomonas stutzeri cytochrome c(4) has been a target for intramolecular, interheme ET. We report here voltammetric and in situ scanning tunneling microscopy (STM) data for P. stutzeri cyt c(4) at single-crystal, atomically planar Au(111)-electrode surfaces modified by variable-length omega-mercapto-alkanoic carboxylic acids. As evidenced by in situ STM, the strongly dipolar protein is immobilized in a close to vertical orientation at this surface with the positively charged high-potential heme domain adjacent to the electrode. This orientation gives asymmetric voltammograms with two one-ET peaks in the cathodic direction and a single two-ET peak in the anodic direction. Intramolecular, interheme ET with high, 8,000-30,000 s(-1), rate constants is notably an essential part of this mechanism. The high rate constants are in striking contrast to ET reactions of P. stutzeri cyt c(4) with small reaction partners in homogeneous solution for which kinetic analysis clearly testifies to electrostatic cooperative effects but no intramolecular, interheme ET higher than 0.1-10 s(-1). This difference suggests a strong gating feature of the process. On the basis of the three-dimensional structure of P. stutzeri cyt c(4), gating is understandable due to the through-space, hydrogen-bonded electronic contact between the heme propionates which is highly sensitive to environmental configurational fluctuations.

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

Space Radar Image of Boston, Massachusetts

NASA Technical Reports Server (NTRS)

1994-01-01

This radar image of the area surrounding Boston, Mass., shows how a spaceborne radar system distinguishes between densely populated urban areas and nearby areas that are relatively unsettled. The bright white area at the right center of the image is downtown Boston. The wide river below and to the left of the city is the Charles River in Boston's Back Bay neighborhood. The dark green patch to the right of the Back Bay is Boston Common. A bridge across the north end of Back Bay connects the cities of Boston and Cambridge. The light green areas that dominate most of the image are the suburban communities surrounding Boston. The many ponds that dot the region appear as dark irregular spots. Many densely populated urban areas show up as red in the image due to the alignment of streets and buildings to the incoming radar beam. North is toward the upper left. The image was acquired on October 9, 1994, by the Spaceborne Imaging Radar-C/X-Band Synthetic Aperture Radar (SIR-C/X-SAR) as it flew aboard the space shuttle Endeavour. This area is centered at 42.4 degrees north latitude, 71.2 degrees west longitude. The area shown is approximately 37 km by 18 km (23 miles by 11 miles). Colors are assigned to different radar frequencies and polarizations as follows: red is L-band horizontally transmitted, horizontally received; green is L-band horizontally transmitted, vertically received; blue is C-band horizontally transmitted, vertically received. SIR-C/X-SAR, a cooperative mission of the German, Italian and United States space agencies, is part of NASA's Mission to Planet Earth program.

Early, but not late visual distractors affect movement synchronization to a temporal-spatial visual cue.

PubMed

Booth, Ashley J; Elliott, Mark T

2015-01-01

The ease of synchronizing movements to a rhythmic cue is dependent on the modality of the cue presentation: timing accuracy is much higher when synchronizing with discrete auditory rhythms than an equivalent visual stimulus presented through flashes. However, timing accuracy is improved if the visual cue presents spatial as well as temporal information (e.g., a dot following an oscillatory trajectory). Similarly, when synchronizing with an auditory target metronome in the presence of a second visual distracting metronome, the distraction is stronger when the visual cue contains spatial-temporal information rather than temporal only. The present study investigates individuals' ability to synchronize movements to a temporal-spatial visual cue in the presence of same-modality temporal-spatial distractors. Moreover, we investigated how increasing the number of distractor stimuli impacted on maintaining synchrony with the target cue. Participants made oscillatory vertical arm movements in time with a vertically oscillating white target dot centered on a large projection screen. The target dot was surrounded by 2, 8, or 14 distractor dots, which had an identical trajectory to the target but at a phase lead or lag of 0, 100, or 200 ms. We found participants' timing performance was only affected in the phase-lead conditions and when there were large numbers of distractors present (8 and 14). This asymmetry suggests participants still rely on salient events in the stimulus trajectory to synchronize movements. Subsequently, distractions occurring in the window of attention surrounding those events have the maximum impact on timing performance.

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

2017-05-01

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s, filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

Imaging hydrogen flames by two-photon, laser-induced fluorescence

NASA Technical Reports Server (NTRS)

Miles, R.; Lempert, W.; Kumar, V.; Diskin, G.

1991-01-01

A nonintrusive multicomponent imaging system is developed which can image hydrogen, hot oxygen, and air simultaneously. An Ar-F excimer laser is injection-locked to cover the Q1 two-photon transition in molecular hydrogen which allows the observation of both hot oxygen and cold hydrogen. Rayleigh scattering from the water molecules occurs at the same frequency as the illuminating laser allowing analysis of the air density. Images of ignited and nonignited hydrogen jets are recorded with a high-sensitivity gated video camera. The images permit the analysis of turbulent hydrogen-core jet, the combustion zone, and the surrounding air, and two-dimensional spatial correlations can be made to study the turbulent structure and couplings between different regions of the flow field. The method is of interest to the study of practical combustion systems which employ hydrogen-air diffusion flames.

Cryo-EM Structure of the TOM Core Complex from Neurospora crassa.

PubMed

Bausewein, Thomas; Mills, Deryck J; Langer, Julian D; Nitschke, Beate; Nussberger, Stephan; Kühlbrandt, Werner

2017-08-10

The TOM complex is the main entry gate for protein precursors from the cytosol into mitochondria. We have determined the structure of the TOM core complex by cryoelectron microscopy (cryo-EM). The complex is a 148 kDa symmetrical dimer of ten membrane protein subunits that create a shallow funnel on the cytoplasmic membrane surface. In the core of the dimer, the β-barrels of the Tom40 pore form two identical preprotein conduits. Each Tom40 pore is surrounded by the transmembrane segments of the α-helical subunits Tom5, Tom6, and Tom7. Tom22, the central preprotein receptor, connects the two Tom40 pores at the dimer interface. Our structure offers detailed insights into the molecular architecture of the mitochondrial preprotein import machinery. Copyright © 2017 Elsevier Inc. All rights reserved.

Simple graphene chemiresistors as pH sensors: fabrication and characterization

NASA Astrophysics Data System (ADS)

Lei, Nan; Li, Pengfei; Xue, Wei; Xu, Jie

2011-10-01

We report the fabrication and characterization of a simple gate-free graphene device as a pH sensor. The graphene sheets are made by mechanical exfoliation. Platinum contact electrodes are fabricated with a mask-free process using a focused ion beam and then expanded by silver paint. Annealing is used to improve the electrical contact. The experiment on the fabricated graphene device shows that the resistance of the device decreases linearly with increasing pH values (in the range of 4-10) in the surrounding liquid environment. The resolution achieved in our experiments is approximately 0.3 pH in alkali environment. The sensitivity of the device is calculated as approximately 2 kΩ pH-1. The simple configuration, miniaturized size and integration ability make graphene-based sensors promising candidates for future micro/nano applications.

Topographic variations in chaos on Europa: Implications for diapiric formation

NASA Technical Reports Server (NTRS)

Schenk, Paul M.; Pappalardo, Robert T.

2004-01-01

Disrupted terrain, or chaos, on Europa, might have formed through melting of a floating ice shell from a subsurface ocean [Cam et al., 1998; Greenberg et al., 19991, or breakup by diapirs rising from the warm lower portion of the ice shell [Head and Pappalardo, 1999; Collins et al., 20001. Each model makes specific and testable predictions for topographic expression within chaos and relative to surrounding terrains on local and regional scales. High-resolution stereo-controlled photoclinometric topography indicates that chaos topography, including the archetypal Conamara Chaos region, is uneven and commonly higher than surrounding plains by up to 250 m. Elevated and undulating topography is more consistent with diapiric uplift of deep material in a relatively thick ice shell, rather than melt-through and refreezing of regionally or globally thin ice by a subsurface ocean. Vertical and horizontal scales of topographic doming in Conamara Chaos are consistent with a total ice shell thickness >15 km. Contact between Europa's ocean and surface may most likely be indirectly via diapirism or convection.

Topographic variations in chaos on Europa: Implications for diapiric formation

NASA Astrophysics Data System (ADS)

Schenk, Paul M.; Pappalardo, Robert T.

2004-08-01

Disrupted terrain, or chaos, on Europa, might have formed through melting of a floating ice shell from a subsurface ocean [Carr et al., 1998; Greenberg et al., 1999], or breakup by diapirs rising from the warm lower portion of the ice shell [Head and Pappalardo, 1999; Collins et al., 2000]. Each model makes specific and testable predictions for topographic expression within chaos and relative to surrounding terrains on local and regional scales. High-resolution stereo-controlled photoclinometric topography indicates that chaos topography, including the archetypal Conamara Chaos region, is uneven and commonly higher than surrounding plains by up to 250 m. Elevated and undulating topography is more consistent with diapiric uplift of deep material in a relatively thick ice shell, rather than melt-through and refreezing of regionally or globally thin ice by a subsurface ocean. Vertical and horizontal scales of topographic doming in Conamara Chaos are consistent with a total ice shell thickness >15 km. Contact between Europa's ocean and surface may most likely be indirectly via diapirism or convection.

Steady flows in the chromosphere and transition-zone above active regions as observed by OSO-8

NASA Technical Reports Server (NTRS)

Lites, B. W.

1980-01-01

Two years of data from the University of Colorado ultraviolet spectrometer aboard OSO-8 were searched for steady line-of-sight flows in the chromosphere and transition-zone above active regions. The most conspicuous pattern that emerges from this data set is that many sunspots show persistent blueshifts of transition-zone lines indicating velocities of about 20 km/s with respect to the surrounding plage areas. The data show much smaller shifts in ultraviolet emission lines arising from the chromosphere: the shifts are frequently to the blue, but sometimes redshifts do occur. Plage areas often show a redshift of the transition-zone lines relative to the surrounding quiet areas, and a strong gradient of the vertical component of the velocity is evident in many plages. One area of persistent blueshift was observed in the transition-zone above an active region filament. The energy requirement of these steady flows over sunspots is discussed.

Volcanic explosion clouds - Density, temperature, and particle content estimates from cloud motion

NASA Technical Reports Server (NTRS)

Wilson, L.; Self, S.

1980-01-01

Photographic records of 10 vulcanian eruption clouds produced during the 1978 eruption of Fuego Volcano in Guatemala have been analyzed to determine cloud velocity and acceleration at successive stages of expansion. Cloud motion is controlled by air drag (dominant during early, high-speed motion) and buoyancy (dominant during late motion when the cloud is convecting slowly). Cloud densities in the range 0.6 to 1.2 times that of the surrounding atmosphere were obtained by fitting equations of motion for two common cloud shapes (spheres and vertical cylinders) to the observed motions. Analysis of the heat budget of a cloud permits an estimate of cloud temperature and particle weight fraction to be made from the density. Model results suggest that clouds generally reached temperatures within 10 K of that of the surrounding air within 10 seconds of formation and that dense particle weight fractions were less than 2% by this time. The maximum sizes of dense particles supported by motion in the convecting clouds range from 140 to 1700 microns.

Atmospheric dispersion modelling over complex terrain at small scale

NASA Astrophysics Data System (ADS)

Nosek, S.; Janour, Z.; Kukacka, L.; Jurcakova, K.; Kellnerova, R.; Gulikova, E.

2014-03-01

Previous study concerned of qualitative modelling neutrally stratified flow over open-cut coal mine and important surrounding topography at meso-scale (1:9000) revealed an important area for quantitative modelling of atmospheric dispersion at small-scale (1:3300). The selected area includes a necessary part of the coal mine topography with respect to its future expansion and surrounding populated areas. At this small-scale simultaneous measurement of velocity components and concentrations in specified points of vertical and horizontal planes were performed by two-dimensional Laser Doppler Anemometry (LDA) and Fast-Response Flame Ionization Detector (FFID), respectively. The impact of the complex terrain on passive pollutant dispersion with respect to the prevailing wind direction was observed and the prediction of the air quality at populated areas is discussed. The measured data will be used for comparison with another model taking into account the future coal mine transformation. Thus, the impact of coal mine transformation on pollutant dispersion can be observed.

Respiratory gating and multifield technique radiotherapy for esophageal cancer.

PubMed

Ohta, Atsushi; Kaidu, Motoki; Tanabe, Satoshi; Utsunomiya, Satoru; Sasamoto, Ryuta; Maruyama, Katsuya; Tanaka, Kensuke; Saito, Hirotake; Nakano, Toshimichi; Shioi, Miki; Takahashi, Haruna; Kushima, Naotaka; Abe, Eisuke; Aoyama, Hidefumi

2017-03-01

To investigate the effects of a respiratory gating and multifield technique on the dose-volume histogram (DVH) in radiotherapy for esophageal cancer. Twenty patients who underwent four-dimensional computed tomography for esophageal cancer were included. We retrospectively created the four treatment plans for each patient, with or without the respiratory gating and multifield technique: No gating-2-field, No gating-4-field, Gating-2-field, and Gating-4-field plans. We compared the DVH parameters of the lung and heart in the No gating-2-field plan with the other three plans. In the comparison of the parameters in the No gating-2-field plan, there are significant differences in the Lung V 5Gy , V 20Gy , mean dose with all three plans and the Heart V 25Gy -V 40Gy with Gating-2-field plan, V 35Gy , V 40Gy , mean dose with No Gating-4-field plan and V 30Gy -V 40Gy , and mean dose with Gating-4-field plan. The lung parameters were smaller in the Gating-2-field plan and larger in the No gating-4-field and Gating-4-field plans. The heart parameters were all larger in the No gating-2-field plan. The lung parameters were reduced by the respiratory gating technique and increased by the multifield technique. The heart parameters were reduced by both techniques. It is important to select the optimal technique according to the risk of complications.

INTERNAL DYNAMICS OF A TWIN-LAYER SOLAR PROMINENCE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, C.; Keppens, R.

Modern observations revealed rich dynamics within solar prominences. The globally stable quiescent prominences, characterized by the presence of thin vertical threads and falling knobs, are frequently invaded by small rising dark plumes. These dynamic phenomena are related to magnetic Rayleigh–Taylor instability, since prominence matter, 100 times denser than surrounding coronal plasma, is lifted against gravity by weak magnetic field. To get a deeper understanding of the physics behind these phenomena, we use three-dimensional magnetohydrodynamic simulations to investigate the nonlinear magnetoconvective motions in a twin-layer prominence in a macroscopic model from chromospheric layers up to 30 Mm height. The properties ofmore » simulated falling “fingers” and uprising bubbles are consistent with those in observed vertical threads and rising plumes in quiescent prominences. Both sheets of the twin-layer prominence show a strongly coherent evolution due to their magnetic connectivity, and demonstrate collective kink deformation. Our model suggests that the vertical threads of the prominence as seen in an edge-on view, and the apparent horizontal threads of the filament when seen top-down are different appearances of the same structures. Synthetic images of the modeled twin-layer prominence reflect the strong degree of mixing established over the entire prominence structure, in agreement with the observations.« less

Gravity and the mechanics of dike intrusion

NASA Astrophysics Data System (ADS)

Townsend, M.

2017-12-01

Dikes are a diverse yet ubiquitous feature of terrestrial volcanic and magmatic settings, ranging in size from decimeter-thick aplite dikes in silicic plutons, to meters-thick dikes at basaltic shield volcanoes and rift zones, to 100-meter-thick "giant" dikes in swarms that can exceed over 2000 km in length. Dike profiles may be planar or curved, elliptical or teardrop-shaped, and blunt or tapered at the tips. The variety of size, shape, composition, and intrusion environment is in contrast with the ubiquitous observation that dikes tend to be vertically inclined, emanate from central reservoirs, and propagate laterally for distances that are 10 to over 100 times their height. In this talk, I will briefly review the geological and geophysical observations of dike geometry and propagation directions. These data motivate a 2D mechanical model for vertical dikes in which the primary loading is due to gravity. Using this model, I will explore fundamental relationships between density structure within the magma and surrounding crust, driving pressure, topographic and tectonic loading, and the size, shape, and depth at which dikes become vertically stable such that subsequent propagation is lateral. Modeling results highlight a dual effect of gravity, as both a source of diversity in stable dike geometries and as a robust mechanism for trapping dikes in the subsurface.

Characterization of ozone in the lower troposphere during the 2016 G20 conference in Hangzhou.

PubMed

Su, Wenjing; Liu, Cheng; Hu, Qihou; Fan, Guangqiang; Xie, Zhouqing; Huang, Xin; Zhang, Tianshu; Chen, Zhenyi; Dong, Yunsheng; Ji, Xiangguang; Liu, Haoran; Wang, Zhuang; Liu, Jianguo

2017-12-12

Recently, atmospheric ozone pollution has demonstrated an aggravating tendency in China. To date, most research about atmospheric ozone has been confined near the surface, and an understanding of the vertical ozone structure is limited. During the 2016 G20 conference, strict emission control measures were implemented in Hangzhou, a megacity in the Yangtze River Delta, and its surrounding regions. Here, we monitored the vertical profiles of ozone concentration and aerosol extinction coefficients in the lower troposphere using an ozone lidar, in addition to the vertical column densities (VCDs) of ozone and its precursors in the troposphere through satellite-based remote sensing. The ozone concentrations reached a peak near the top of the boundary layer. During the control period, the aerosol extinction coefficients in the lower lidar layer decreased significantly; however, the ozone concentration fluctuated frequently with two pollution episodes and one clean episode. The sensitivity of ozone production was mostly within VOC-limited or transition regimes, but entered a NOx-limited regime due to a substantial decline of NOx during the clean episode. Temporary measures took no immediate effect on ozone pollution in the boundary layer; instead, meteorological conditions like air mass sources and solar radiation intensities dominated the variations in the ozone concentration.