Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

PubMed Central

Ilahi, Bouraoui; Zribi, Jihene; Guillotte, Maxime; Arès, Richard; Aimez, Vincent; Morris, Denis

2016-01-01

We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode’s active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, allowing a tunable emission band over 160 nm. The emission wavelength blueshift has been ensured by reducing both dots’ height and composition. A structure containing four vertically stacked height-engineered QDs have been fabricated, showing a room temperature broad emission band centered at 1.1 µm. The buried QD layers remain insensitive to the In-flush process of the subsequent layers, testifying the reliability of the process for broadband light sources required for high axial resolution OCT imaging. PMID:28773633

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics.

PubMed

Tasco, Vittorianna; Usman, Muhammad; De Giorgi, Milena; Passaseo, Adriana

2014-02-07

Tailoring of electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how fine control of the strain-induced surface kinetics during the growth of vertically stacked multiple layers of QDs allows for the engineering of their self-organization process. Most noticeably, this study shows that the underlying strain field induced along a QD stack can be modulated and controlled by time-dependent intermixing and segregation effects occurring after capping with a GaAs spacer. This leads to a drastic increase of the TM/TE polarization ratio of emitted light, not accessible from conventional growth parameters. Our detailed experimental measurements, supported by comprehensive multi-million atom simulations of strain, electronic and optical properties, provide in-depth analysis of the grown QD samples allowing us to give a clear picture of the atomic scale phenomena affecting the proposed growth dynamics and consequent QD polarization response.

Strong electron-hole exchange in coherently coupled quantum dots.

PubMed

Fält, Stefan; Atatüre, Mete; Türeci, Hakan E; Zhao, Yong; Badolato, Antonio; Imamoglu, Atac

2008-03-14

We have investigated few-body states in vertically stacked quantum dots. Because of a small interdot tunneling rate, the coupling in our system is in a previously unexplored regime where electron-hole exchange plays a prominent role. By tuning the gate bias, we are able to turn this coupling off and study a complementary regime where total electron spin is a good quantum number. The use of differential transmission allows us to obtain unambiguous signatures of the interplay between electron and hole-spin interactions. Small tunnel coupling also enables us to demonstrate all-optical charge sensing, where a conditional exciton energy shift in one dot identifies the charging state of the coupled partner.

Design and fabrication of six-volt vertically-stacked GaAs photovoltaic power converter

PubMed Central

Zhao, Yongming; Sun, Yurun; He, Yang; Yu, Shuzhen; Dong, Jianrong

2016-01-01

A six-volt vertically-stacked, high current GaAs photovoltaic power converter (PPC) has been designed and fabricated to produce output power over 1 W under monochromatic illumination. An N++-GaAs/P++-AlGaAs tunnel junctions (TJs) structure has been used for connecting each sub-cell in this vertically-stacked PPC device. The thickness of the each GaAs sub-cell has been derived based on the calculation of absorption depth of photons with a wavelength of 808 nm using absorption coefficient obtained from ellipsometry measurements. The devices were characterized under non-uniform CW laser illumination at 808 nm with incident power up to 4.1 W. A maximum conversion efficiency of 50.2% was achieved at 0.3 W under non-uniform (coupled in optical fiber) monochromatic illumination, dropping to 42.5% at 4.1 W. The operating voltage at the maximum power point is 5.5–6.0 V, depending on the incident laser power, and an output electrical power output of 1.3 W can be extracted at a laser power of 2.9 W and the maximum electrical power output amounts to 1.72 W. The external quantum efficiency (EQE) measurement indicates that the performance of PPC can be further improved by refining the design of the thickness of sub-cells and improving TJs. PMID:27901079

Plasmon absorption modulator systems and methods

DOEpatents

Kekatpure, Rohan Deodatta; Davids, Paul

2014-07-15

Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Vertical melting of a stack of membranes

NASA Astrophysics Data System (ADS)

Borelli, M. E. S.; Kleinert, H.; Schakel, A. M. J.

2001-02-01

A stack of tensionless membranes with nonlinear curvature energy and vertical harmonic interaction is studied. At low temperatures, the system forms a lamellar phase. At a critical temperature, the stack disorders vertically in a melting-like transition.

InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

NASA Astrophysics Data System (ADS)

Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May

2018-06-01

We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal–organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III–V nano-light emitters on mainstream (001) Si substrates.

InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.

PubMed

Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May

2018-06-01

We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.

Thermal induced carrier's transfer in bimodal size distribution InAs/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Ilahi, B.; Alshehri, K.; Madhar, N. A.; Sfaxi, L.; Maaref, H.

2018-06-01

This work reports on the investigation of the thermal induced carriers' transfer mechanism in vertically stacked bimodal size distribution InAs/GaAs quantum dots (QD). A model treating the QD as a localized states ensemble (LSE) has been employed to fit the atypical temperature dependence of the photoluminescence (PL) emission energies and linewidth. The results suggest that thermally activated carriers transfer within the large size QD family occurs through the neighboring smaller size QD as an intermediate channel before direct carriers redistribution. The obtained activation energy suggests also the possible contribution of the wetting layer (WL) continuum states as a second mediator channel for carriers transfer.

Photovoltaic driven multiple quantum well optical modulator

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

Multiple quantum well (MQW) structures (12) are utilized to provide real-time, reliable, high-performance, optically-addressed spatial-light modulators (SLM) (10). The optically-addressed SLM comprises a vertical stack of quantum well layers (12a) within the penetration depth of an optical write signal 18, a plurality of space charge barriers (12b) having predetermined tunneling times by control of doping and thickness. The material comprising the quantum well layers has a lower bandgap than that of the space charge barrier layers. The write signal modulates a read signal (20). The modulation sensitivity of the device is high and no external voltage source is required. In a preferred embodiment, the SLM having interleaved doped semiconductor layers for driving the MQW photovoltaically is characterized by the use of a shift analogous to the Moss-Burnstein shift caused by the filling of two-dimensional states in the multiple quantum wells, thus allowing high modulation sensitivity in very narrow wells. Arrays (30) may be formed with a plurality of the modulators.

Lateral electrochemical etching of III-nitride materials for microfabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Jung

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Detection of quantum well induced single degenerate-transition-dipoles in ZnO nanorods.

PubMed

Ghosh, Siddharth; Ghosh, Moumita; Seibt, Michael; Rao, G Mohan

2016-02-07

Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission patterns from optical imaging with a multi-dimensional dipole and find that the experimentally observed dipole pattern and model-calculated patterns are in excellent agreement. This agreement suggests the presence of vertically oriented degenerate-transition-dipoles in vertically aligned ZnO nanorods. The HRTEM of the ZnO nanorod shows the presence of a stacking fault, which generates a localised quantum well induced degenerate-transition-dipole. Finally, we elucidate that defocused wide-field imaging can be widely used to characterise defects in nanomaterials to answer many difficult questions concerning the performance of low-dimensional devices, such as in energy harvesting, advanced metal-oxide-semiconductor storage, and nanoelectromechanical and nanophotonic devices.

Effect of the tilted magnetic field on the magnetosubbands and conductance in the bilayer quantum wire

NASA Astrophysics Data System (ADS)

Chwiej, T.

2016-10-01

We theoretically study the single electron magnetotransport in GaAs and InGaAs vertically stacked bilayer nanowires. In considered geometry, the tilted magnetic field is always perpendicular to the main (transport) axis of the quantum wire and, therefore its transverse and vertical components allow separately for changing the magnitude of intralayer and interlayer subbands mixing. We study the changes introduced to energy dispersion relation E(k) by tilted magnetic field of strength up to several tesla and analyze their origins for symmetric as well as asymmetric confining potentials in the growth direction. Calculated energy dispersion relations are thereafter used to show that the value of a conductance of the bilayer nanowire may abruptly rise as well as fall by few conductance quanta when the Fermi energy in nanosystem is changed. It is also shown that such conductance oscillations, in conjunction with spin Zeeman effect, may give a moderately spin polarized current in the bilayer nanowire.

Enhancement in Organic Photovoltaic Efficiency through the Synergistic Interplay of Molecular Donor Hydrogen Bonding and -Stacking

DOE PAGES

Shewmon, Nathan; Watkins, Davita; Galindo, Johan; ...

2015-07-20

For organic photovoltaic (OPV) cells based on the bulk heterojunction (BHJ) structure, it remains challenging to rationally control the degree of phase separation and percolation within blends of donors and acceptors to secure optimal charge separation and transport. Reported is a bottom-up, supramolecular approach to BHJ OPVs wherein tailored hydrogen bonding (H-bonding) interactions between π-conjugated electron donor molecules encourage formation of vertically aligned donor π-stacks while simultaneously suppressing lateral aggregation; the programmed arrangement facilitates fine mixing with fullerene acceptors and efficient charge transport. The approach is illustrated using conventional linear or branched quaterthiophene donor chromophores outfitted with terminal functional groupsmore » that are either capable or incapable of self-complementary H-bonding. When applied to OPVs, the H-bond capable donors yield a twofold enhancement in power conversion efficiency relative to the comparator systems, with a maximum external quantum efficiency of 64%. H-bond promoted assembly results in redshifted absorption (in neat films and donor:C 60 blends) and enhanced charge collection efficiency despite disparate donor chromophore structure. Both features positively impact photocurrent and fill factor in OPV devices. Film structural characterization by atomic force microscopy, transmission electron microscopy, and grazing incidence wide angle X-ray scattering reveals a synergistic interplay of lateral H-bonding interactions and vertical π-stacking for directing the favorable morphology of the BHJ.« less

Ultimately short ballistic vertical graphene Josephson junctions

PubMed Central

Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

2015-01-01

Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

Phases of a stack of membranes in a large number of dimensions of configuration space

NASA Astrophysics Data System (ADS)

Borelli, M. E.; Kleinert, H.

2001-05-01

The phase diagram of a stack of tensionless membranes with nonlinear curvature energy and vertical harmonic interaction is calculated exactly in a large number of dimensions of configuration space. At low temperatures, the system forms a lamellar phase with spontaneously broken translational symmetry in the vertical direction. At a critical temperature, the stack disorders vertically in a meltinglike transition. The critical temperature is determined as a function of the interlayer separation l.

Vacuum-induced coherence in quantum dot systems

NASA Astrophysics Data System (ADS)

Sitek, Anna; Machnikowski, Paweł

2012-11-01

We present a theoretical study of vacuum-induced coherence in a pair of vertically stacked semiconductor quantum dots. The process consists in a coherent excitation transfer from a single-exciton state localized in one dot to a delocalized state in which the exciton occupation gets trapped. We study the influence of the factors characteristic of quantum dot systems (as opposed to natural atoms): energy mismatch, coupling between the single-exciton states localized in different dots, and different and nonparallel dipoles due to sub-band mixing, as well as coupling to phonons. We show that the destructive effect of the energy mismatch can be overcome by an appropriate interplay of the dipole moments and coupling between the dots which allows one to observe the trapping effect even in a structure with technologically realistic energy splitting of the order of milli-electron volts. We also analyze the impact of phonon dynamics on the occupation trapping and show that phonon effects are suppressed in a certain range of system parameters. This analysis shows that the vacuum-induced coherence effect and the associated long-living trapped excitonic population can be achieved in quantum dots.

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

NASA Astrophysics Data System (ADS)

Wang, Yangyang; Ni, Zeyuan; Liu, Qihang; Quhe, Ruge; Zheng, Jiaxin; Ye, Meng; Yu, Dapeng; Shi, Junjie; Yang, Jinbo; Li, Ju; Lu, Jing; Collaborative Innovation Center of Quantum Matter, Beijing Collaboration

2015-03-01

All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps. A visiting student in MIT now.

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, Nandlal; Reuter, Dirk

2017-11-01

Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

Interaction driven quantum Hall effect in artificially stacked graphene bilayers

PubMed Central

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-01-01

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers. PMID:27098387

Interaction driven quantum Hall effect in artificially stacked graphene bilayers.

PubMed

Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood; Nam, Jungtae; Kim, Keun Soo; Eom, Jonghwa

2016-04-21

The honeycomb lattice structure of graphene gives rise to its exceptional electronic properties of linear dispersion relation and its chiral nature of charge carriers. The exceptional electronic properties of graphene stem from linear dispersion relation and chiral nature of charge carries, originating from its honeycomb lattice structure. Here, we address the quantum Hall effect in artificially stacked graphene bilayers and single layer graphene grown by chemical vapor deposition. The quantum Hall plateaus started to appear more than 3 T and became clearer at higher magnetic fields up to 9 T. Shubnikov-de Hass oscillations were manifestly observed in graphene bilayers texture. These unusual plateaus may have been due to the layers interaction in artificially stacked graphene bilayers. Our study initiates the understanding of interactions between artificially stacked graphene layers.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

Horizontal high speed stacking for batteries with prismatic cans

DOEpatents

Bartos, Andrew L.; Lin, Yhu-Tin; Turner, III, Raymond D.

2016-06-14

A system and method for stacking battery cells or related assembled components. Generally planar, rectangular (prismatic-shaped) battery cells are moved from an as-received generally vertical stacking orientation to a generally horizontal stacking orientation without the need for robotic pick-and-place equipment. The system includes numerous conveyor belts that work in cooperation with one another to deliver, rotate and stack the cells or their affiliated assemblies. The belts are outfitted with components to facilitate the cell transport and rotation. The coordinated movement between the belts and the components promote the orderly transport and rotation of the cells from a substantially vertical stacking orientation into a substantially horizontal stacking orientation. The approach of the present invention helps keep the stacked assemblies stable so that subsequent assembly steps--such as compressing the cells or attaching electrical leads or thermal management components--may proceed with a reduced chance of error.

Electrical modulation of the complex refractive index in mid-infrared quantum cascade lasers.

PubMed

Teissier, J; Laurent, S; Manquest, C; Sirtori, C; Bousseksou, A; Coudevylle, J R; Colombelli, R; Beaudoin, G; Sagnes, I

2012-01-16

We have demonstrated an integrated three terminal device for the modulation of the complex refractive index of a distributed feedback quantum cascade laser (QCL). The device comprises an active region to produce optical gain vertically stacked with a control region made of asymmetric coupled quantum wells (ACQW). The optical mode, centered on the gain region, has a small overlap also with the control region. Owing to the three terminals an electrical bias can be applied independently on both regions: on the laser for producing optical gain and on the ACQW for tuning the energy of the intersubband transition. This allows the control of the optical losses at the laser frequency as the absorption peak associated to the intersubband transition can be electrically brought in and out the laser transition. By using this function a laser modulation depth of about 400 mW can be achieved by injecting less than 1 mW in the control region. This is four orders of magnitude less than the electrical power needed using direct current modulation and set the basis for the realisation of electrical to optical transducers.

Spectral gain profile of a multi-stack terahertz quantum cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bachmann, D., E-mail: dominic.bachmann@tuwien.ac.at; Deutsch, C.; Krall, M.

2014-11-03

The spectral gain of a multi-stack terahertz quantum cascade laser, composed of three active regions with emission frequencies centered at 2.3, 2.7, and 3.0 THz, is studied as a function of driving current and temperature using terahertz time-domain spectroscopy. The optical gain associated with the particular quantum cascade stacks clamps at different driving currents and saturates to different values. We attribute these observations to varying pumping efficiencies of the respective upper laser states and to frequency dependent optical losses. The multi-stack active region exhibits a spectral gain full width at half-maximum of 1.1 THz. Bandwidth and spectral position of themore » measured gain match with the broadband laser emission. As the laser action ceases with increasing operating temperature, the gain at the dominant lasing frequency of 2.65 THz degrades sharply.« less

Nature and magnitude of aromatic base stacking in DNA and RNA: Quantum chemistry, molecular mechanics, and experiment.

PubMed

Sponer, Jiří; Sponer, Judit E; Mládek, Arnošt; Jurečka, Petr; Banáš, Pavel; Otyepka, Michal

2013-12-01

Base stacking is a major interaction shaping up and stabilizing nucleic acids. During the last decades, base stacking has been extensively studied by experimental and theoretical methods. Advanced quantum-chemical calculations clarified that base stacking is a common interaction, which in the first approximation can be described as combination of the three most basic contributions to molecular interactions, namely, electrostatic interaction, London dispersion attraction and short-range repulsion. There is not any specific π-π energy term associated with the delocalized π electrons of the aromatic rings that cannot be described by the mentioned contributions. The base stacking can be rather reasonably approximated by simple molecular simulation methods based on well-calibrated common force fields although the force fields do not include nonadditivity of stacking, anisotropy of dispersion interactions, and some other effects. However, description of stacking association in condensed phase and understanding of the stacking role in biomolecules remain a difficult problem, as the net base stacking forces always act in a complex and context-specific environment. Moreover, the stacking forces are balanced with many other energy contributions. Differences in definition of stacking in experimental and theoretical studies are explained. Copyright © 2013 Wiley Periodicals, Inc.

Colossal terahertz nonlinearity of tunneling van der Waals gap (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Ji Yeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2016-09-01

We manufactured an array of three angstrom-wide, five millimeter-long van der Waals gaps of copper-graphene-copper composite, in which unprecedented nonlinearity was observed. To probe and manipulate van der Waals gaps with long wavelength electromagnetic waves such as terahertz waves, one is required to fabricate vertically oriented van der Waals gaps sandwiched between two metal planes with an infinite length in the sense of being much larger than any of the wavelengths used. By comparison with the simple vertical stacking of metal-graphene-metal structure, in our structure, background signals are completely blocked enabling all the light to squeeze through the gap without any strays. When the angstrom-sized van der Waals gaps are irradiated with intense terahertz pulses, the transient voltage across the gap reaches up to 5 V with saturation, sufficiently strong to deform the quantum barrier of angstrom gaps. The large transient potential difference across the gap facilitates electron tunneling through the quantum barrier, blocking terahertz waves completely. This negative feedback of electron tunneling leads to colossal nonlinear optical response, a 97% decrease in the normalized transmittance. Our technology for infinitely long van der Waals gaps can be utilized for other atomically thin materials than single layer graphene, enabling linear and nonlinear angstrom optics in a broad spectral range.

Topological Quantum Phase Transitions in Two-Dimensional Hexagonal Lattice Bilayers

NASA Astrophysics Data System (ADS)

Zhai, Xuechao; Jin, Guojun

2013-09-01

Since the successful fabrication of graphene, two-dimensional hexagonal lattice structures have become a research hotspot in condensed matter physics. In this short review, we theoretically focus on discussing the possible realization of a topological insulator (TI) phase in systems of graphene bilayer (GBL) and boron nitride bilayer (BNBL), whose band structures can be experimentally modulated by an interlayer bias voltage. Under the bias, a band gap can be opened in AB-stacked GBL but is still closed in AA-stacked GBL and significantly reduced in AA- or AB-stacked BNBL. In the presence of spin-orbit couplings (SOCs), further demonstrations indicate whether the topological quantum phase transition can be realized strongly depends on the stacking orders and symmetries of structures. It is observed that a bulk band gap can be first closed and then reopened when the Rashba SOC increases for gated AB-stacked GBL or when the intrinsic SOC increases for gated AA-stacked BNBL. This gives a distinct signal for a topological quantum phase transition, which is further characterized by a jump of the ℤ2 topological invariant. At fixed SOCs, the TI phase can be well switched by the interlayer bias and the phase boundaries are precisely determined. For AA-stacked GBL and AB-stacked BNBL, no strong TI phase exists, regardless of the strength of the intrinsic or Rashba SOCs. At last, a brief overview is given on other two-dimensional hexagonal materials including silicene and molybdenum disulfide bilayers.

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Ming, E-mail: ming.xu@lgep.supelec.fr; Jaffré, Alexandre, E-mail: ming.xu@lgep.supelec.fr; Alvarez, José, E-mail: ming.xu@lgep.supelec.fr

2015-02-27

We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

Fabrication of a prototype dipole for the SSC Low Energy Booster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spencer, C.M.

1993-12-01

The Low Energy Booster of the Superconducting Super Collider (SSC) will be a synchrotron containing 96 dipoles operating between 0.13 T and 1.35 T at 10 Hz. Each dipole`s 1.865 m-long core is made from {approximately}2900 steel laminations (lams), each 52 {times} 66 cm and 0.635 mm thick. A need to minimize power supply costs and stringent field specifications led to a straight core with very tight mechanical tolerances of the order of 0.05 mm. To satisfy these tolerances, we decided to stack the core in a vertical position; i.e., with the laminations laid horizontally. We designed and built anmore » unusual vertical stacking fixture that pivots into a horizontal position after all the laminations have been stacked and compressed and four support angles welded onto the laminations. The stacking fixture, our experience using it, and conclusions as to the merits of stacking such a long core vertically will be described. The methods of insulating and potting the pancake coils and their installation into the unsplittable core is also described.« less

Guanine base stacking in G-quadruplex nucleic acids

PubMed Central

Lech, Christopher Jacques; Heddi, Brahim; Phan, Anh Tuân

2013-01-01

G-quadruplexes constitute a class of nucleic acid structures defined by stacked guanine tetrads (or G-tetrads) with guanine bases from neighboring tetrads stacking with one another within the G-tetrad core. Individual G-quadruplexes can also stack with one another at their G-tetrad interface leading to higher-order structures as observed in telomeric repeat-containing DNA and RNA. In this study, we investigate how guanine base stacking influences the stability of G-quadruplexes and their stacked higher-order structures. A structural survey of the Protein Data Bank is conducted to characterize experimentally observed guanine base stacking geometries within the core of G-quadruplexes and at the interface between stacked G-quadruplex structures. We couple this survey with a systematic computational examination of stacked G-tetrad energy landscapes using quantum mechanical computations. Energy calculations of stacked G-tetrads reveal large energy differences of up to 12 kcal/mol between experimentally observed geometries at the interface of stacked G-quadruplexes. Energy landscapes are also computed using an AMBER molecular mechanics description of stacking energy and are shown to agree quite well with quantum mechanical calculated landscapes. Molecular dynamics simulations provide a structural explanation for the experimentally observed preference of parallel G-quadruplexes to stack in a 5′–5′ manner based on different accessible tetrad stacking modes at the stacking interfaces of 5′–5′ and 3′–3′ stacked G-quadruplexes. PMID:23268444

Electrostatically confined trilayer graphene quantum dots

NASA Astrophysics Data System (ADS)

Mirzakhani, M.; Zarenia, M.; Vasilopoulos, P.; Peeters, F. M.

2017-04-01

Electrically gating of trilayer graphene (TLG) opens a band gap offering the possibility to electrically engineer TLG quantum dots. We study the energy levels of such quantum dots and investigate their dependence on a perpendicular magnetic field B and different types of stacking of the graphene layers. The dots are modeled as circular and confined by a truncated parabolic potential which can be realized by nanostructured gates or position-dependent doping. The energy spectra exhibit the intervalley symmetry EKe(m ) =-EK'h(m ) for the electron (e ) and hole (h ) states, where m is the angular momentum quantum number and K and K ' label the two valleys. The electron and hole spectra for B =0 are twofold degenerate due to the intervalley symmetry EK(m ) =EK'[-(m +1 ) ] . For both ABC [α =1.5 (1.2) for large (small) R ] and ABA (α =1 ) stackings, the lowest-energy levels show approximately a R-α dependence on the dot radius R in contrast with the 1 /R3 one for ABC-stacked dots with infinite-mass boundary. As functions of the field B , the oscillator strengths for dipole-allowed transitions differ drastically for the two types of stackings.

Stacking of ZnSe/ZnCdSe Multi-Quantum Wells on GaAs (100) by Epitaxial Lift-Off

NASA Astrophysics Data System (ADS)

Eldose, N. M.; Zhu, J.; Mavridi, N.; Prior, Kevin; Moug, R. T.

2018-05-01

Here we present stacking of GaAs/ZnSe/ZnCdSe single-quantum well (QW) structures using epitaxial lift-off (ELO). Molecular beam epitaxy (MBE)-grown II-VI QW structure was lifted using our standard ELO technique. The QW structures were transferred onto glass plates and then subsequent layers stacked on top of each other to form a triple-QW structure. This was compared to an MBE-grown multiple-QW (MQW) structure of similar design. Low-temperature (77 K) photoluminescence (PL) spectroscopy was used to compare the two structures and showed no obvious degradation of the ELO stacked layer. It was observed that by stacking the single QW layer on itself we could increase the PL emission intensity beyond that of the grown MQW structure while maintaining narrow line width.

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter

2014-07-21

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Distinguishability of stacks in ZnTe/ZnSe quantum dots via spectral analysis of Aharonov-Bohm oscillations

NASA Astrophysics Data System (ADS)

Roy, Bidisha; Ji, Haojie; Dhomkar, Siddharth; Cadieu, Fred J.; Peng, Le; Moug, Richard; Tamargo, Maria C.; Kuskovsky, Igor L.

2013-02-01

A spectral analysis of the Aharonov-Bohm (AB) oscillations in photoluminescence intensity was performed for stacked type-II ZnTe/ZnSe quantum dots (QDs) fabricated within multilayered Zn-Se-Te system with sub-monolayer insertions of Te. Robust AB oscillations allowed for fine probing of distinguishable QDs stacks within the ensemble of QDs. The AB transition magnetic field, B AB , changed from the lower energy side to the higher energy side of the PL spectra revealing the presence of different sets of QDs stacks. The change occurs within the spectral range, where the contributing green and blue bands of the spectra overlapped. "Bundling" in lifetime measurements is seen at transition spectral regions confirming the results.

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

PubMed Central

Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

2014-01-01

The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

Nature of Interlayer Binding and Stacking of sp–sp 2 Hybridized Carbon Layers: A Quantum Monte Carlo Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Hyeondeok; Kim, Jeongnim; Lee, Hoonkyung

α-graphyne is a two-dimensional sheet of sp-sp2 hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, α-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable bandgap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult tomore » model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that inter-layer bindings of sp- and sp2-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) eV/atom. From this we conclude that the two stable stacking modes of bilayer α-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other.« less

Nature of Interlayer Binding and Stacking of sp–sp 2 Hybridized Carbon Layers: A Quantum Monte Carlo Study

DOE PAGES

Shin, Hyeondeok; Kim, Jeongnim; Lee, Hoonkyung; ...

2017-10-25

α-graphyne is a two-dimensional sheet of sp-sp2 hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, α-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable bandgap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult tomore » model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that inter-layer bindings of sp- and sp2-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) eV/atom. From this we conclude that the two stable stacking modes of bilayer α-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other.« less

The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite

NASA Astrophysics Data System (ADS)

Habib, K. M. Masum; Sylvia, Somaia S.; Ge, Supeng; Neupane, Mahesh; Lake, Roger K.

2013-12-01

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 mΩ μm2. For small rotation angles, the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neutrality point. Over a range of intermediate angles, the resistance increases exponentially with cell size for minimum size unit cells. Larger cell sizes, of similar angles, may not follow this trend. The energy dependence of the interlayer transmission is described.

Graphite-based photovoltaic cells

DOEpatents

Lagally, Max; Liu, Feng

2010-12-28

The present invention uses lithographically patterned graphite stacks as the basic building elements of an efficient and economical photovoltaic cell. The basic design of the graphite-based photovoltaic cells includes a plurality of spatially separated graphite stacks, each comprising a plurality of vertically stacked, semiconducting graphene sheets (carbon nanoribbons) bridging electrically conductive contacts.

Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates

NASA Astrophysics Data System (ADS)

Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir

2013-11-01

This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.

First-Principles Quantum Dynamics of Singlet Fission: Coherent versus Thermally Activated Mechanisms Governed by Molecular π Stacking

NASA Astrophysics Data System (ADS)

Tamura, Hiroyuki; Huix-Rotllant, Miquel; Burghardt, Irene; Olivier, Yoann; Beljonne, David

2015-09-01

Singlet excitons in π -stacked molecular crystals can split into two triplet excitons in a process called singlet fission that opens a route to carrier multiplication in photovoltaics. To resolve controversies about the mechanism of singlet fission, we have developed a first principles nonadiabatic quantum dynamical model that reveals the critical role of molecular stacking symmetry and provides a unified picture of coherent versus thermally activated singlet fission mechanisms in different acenes. The slip-stacked equilibrium packing structure of pentacene derivatives is found to enhance ultrafast singlet fission mediated by a coherent superexchange mechanism via higher-lying charge transfer states. By contrast, the electronic couplings for singlet fission strictly vanish at the C2 h symmetric equilibrium π stacking of rubrene. In this case, singlet fission is driven by excitations of symmetry-breaking intermolecular vibrations, rationalizing the experimentally observed temperature dependence. Design rules for optimal singlet fission materials therefore need to account for the interplay of molecular π -stacking symmetry and phonon-induced coherent or thermally activated mechanisms.

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki

2014-06-21

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n{sup +}-GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarizationmore » sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.« less

Equivalence of Szegedy's and coined quantum walks

NASA Astrophysics Data System (ADS)

Wong, Thomas G.

2017-09-01

Szegedy's quantum walk is a quantization of a classical random walk or Markov chain, where the walk occurs on the edges of the bipartite double cover of the original graph. To search, one can simply quantize a Markov chain with absorbing vertices. Recently, Santos proposed two alternative search algorithms that instead utilize the sign-flip oracle in Grover's algorithm rather than absorbing vertices. In this paper, we show that these two algorithms are exactly equivalent to two algorithms involving coined quantum walks, which are walks on the vertices of the original graph with an internal degree of freedom. The first scheme is equivalent to a coined quantum walk with one walk step per query of Grover's oracle, and the second is equivalent to a coined quantum walk with two walk steps per query of Grover's oracle. These equivalences lie outside the previously known equivalence of Szegedy's quantum walk with absorbing vertices and the coined quantum walk with the negative identity operator as the coin for marked vertices, whose precise relationships we also investigate.

Structural and quantum chemical analysis of exciton coupling in homo- and heteroaggregate stacks of merocyanines

NASA Astrophysics Data System (ADS)

Bialas, David; Zitzler-Kunkel, André; Kirchner, Eva; Schmidt, David; Würthner, Frank

2016-09-01

Exciton coupling is of fundamental importance and determines functional properties of organic dyes in (opto-)electronic and photovoltaic devices. Here we show that strong exciton coupling is not limited to the situation of equal chromophores as often assumed. Quadruple dye stacks were obtained from two bis(merocyanine) dyes with same or different chromophores, respectively, which dimerize in less-polar solvents resulting in the respective homo- and heteroaggregates. The structures of the quadruple dye stacks were assigned by NMR techniques and unambiguously confirmed by single-crystal X-ray analysis. The heteroaggregate stack formed from the bis(merocyanine) bearing two different chromophores exhibits remarkably different ultraviolet/vis absorption bands compared with those of the homoaggregate of the bis(merocyanine) comprising two identical chromophores. Quantum chemical analysis based on an extension of Kasha's exciton theory appropriately describes the absorption properties of both types of stacks revealing strong exciton coupling also between different chromophores within the heteroaggregate.

VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

PubMed

Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki; Sogawa, Tetsuomi

2012-06-13

We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

Development of a multi-space constrained density functional theory approach and its application to graphene-based vertical transistors

NASA Astrophysics Data System (ADS)

Kim, Han Seul; Kim, Yong-Hoon

We have been developing a multi-space-constrained density functional theory approach for the first-principles calculations of nano-scale junctions subjected to non-equilibrium conditions and charge transport through them. In this presentation, we apply the method to vertically-stacked graphene/hexagonal boron nitride (hBN)/graphene Van der Waals heterostructures in the context of tunneling transistor applications. Bias-dependent changes in energy level alignment, wavefunction hybridization, and current are extracted. In particular, we compare quantum transport properties of single-layer (graphene) and infinite (graphite) electrode limits on the same ground, which is not possible within the traditional non-equilibrium Green function formalism. The effects of point defects within hBN on the current-voltage characteristics will be also discussed. Global Frontier Program (2013M3A6B1078881), Nano-Material Technology Development Programs (2016M3A7B4024133, 2016M3A7B4909944, and 2012M3A7B4049888), and Pioneer Program (2016M3C1A3906149) of the National Research Foundation.

Mid- and Long-IR Broadband Quantum Well Photodetector

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Ting, David Z.; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2012-01-01

A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs.

Hybrid nanostructures of well-organized arrays of colloidal quantum dots and a self-assembled monolayer of gold nanoparticles for enhanced fluorescence

NASA Astrophysics Data System (ADS)

Liu, Xiaoying; McBride, Sean P.; Jaeger, Heinrich M.; Nealey, Paul F.

2016-07-01

Hybrid nanomaterials comprised of well-organized arrays of colloidal semiconductor quantum dots (QDs) in close proximity to metal nanoparticles (NPs) represent an appealing system for high-performance, spectrum-tunable photon sources with controlled photoluminescence. Experimental realization of such materials requires well-defined QD arrays and precisely controlled QD-metal interspacing. This long-standing challenge is tackled through a strategy that synergistically combines lateral confinement and vertical stacking. Lithographically generated nanoscale patterns with tailored surface chemistry confine the QDs into well-organized arrays with high selectivity through chemical pattern directed assembly, while subsequent coating with a monolayer of close-packed Au NPs introduces the plasmonic component for fluorescence enhancement. The results show uniform fluorescence emission in large-area ordered arrays for the fabricated QD structures and demonstrate five-fold fluorescence amplification for red, yellow, and green QDs in the presence of the Au NP monolayer. Encapsulation of QDs with a silica shell is shown to extend the design space for reliable QD/metal coupling with stronger enhancement of 11 times through the tuning of QD-metal spatial separation. This approach provides new opportunities for designing hybrid nanomaterials with tailored array structures and multiple functionalities for applications such as multiplexed optical coding, color display, and quantum transduction.

Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aihara, Taketo; Fukuyama, Atsuhiko; Ikari, Tetsuo

2015-02-28

Three non-destructive methodologies, namely, surface photovoltage (SPV), photoluminescence, and piezoelectric photothermal (PPT) spectroscopies, were adopted to detect the thermal carrier escape from quantum well (QW) and radiative and non-radiative carrier recombinations, respectively, in strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW)-inserted GaAs p-i-n solar cell structure samples. Although the optical absorbance signal intensity was proportional to the number of QW stack, the signal intensities of the SPV and PPT methods decreased at high number of stack. To explain the temperature dependency of these signal intensities, we proposed a model that considers the three carrier dynamics: the thermal escape from the QW, and the non-radiativemore » and radiative carrier recombinations within the QW. From the fitting procedures, it was estimated that the activation energies of the thermal escape ΔE{sub barr} and non-radiative recombination ΔE{sub NR} were 68 and 29 meV, respectively, for a 30-stacked MQW sample. The estimated ΔE{sub barr} value agreed well with the difference between the first electron subband and the top of the potential barrier in the conduction band. We found that ΔE{sub barr} remained constant at approximately 70 meV even with increasing QW stack number. However, the ΔE{sub NR} value monotonically increased with the increase in the number of stack. Since this implies that non-radiative recombination becomes improbable as the number of stack increases, we found that the radiative recombination probability for electrons photoexcited within the QW increased at a large number of QW stack. Additional processes of escaping and recapturing of carriers at neighboring QW were discussed. As a result, the combination of the three non-destructive methodologies provided us new insights for optimizing the MQW components to further improve the cell performance.« less

Stacked silicide/silicon mid- to long-wavelength infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Stacked silicide/silicon mid- to long-wavelength infrared detector

DOEpatents

Maserjian, Joseph

1990-03-13

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

DTIC Science & Technology

2015-07-16

SECURITY CLASSIFICATION OF: The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 - 1.3 µm...2015 Approved for Public Release; Distribution Unlimited Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface...ABSTRACT Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report

Coupled-cavity surface-emitting lasers: spectral and polarization threshold characteristics and electrooptic switching.

PubMed

Panajotov, Krassimir P; Zujewski, Mateusz; Thienpont, Hugo

2010-12-20

We study spectral and polarization threshold characteristics of coupled-cavity Vertical-Surface-Emitting Lasers (CC-VCSEL) on the base of a simple matrix approach. We show that strong wavelength discrimination can be achieved in CC-VCSELs by slightly detuning the cavities. However, polarization discrimination is not provided by the coupled-cavity design. We also consider the case of reverse-biasing one of the cavities, i.e. using it as a modulator via linear and/or quadratic electrooptic effect. Such a CC-VCSEL can act as a voltage-controlled polarization or wavelength switching device that is decoupled from the laser design and can be optimized for high modulation speed. We also show that using QD stack instead of quantum wells in the top cavity would lead to significant reduction of the driving electrical field.

Juno at the Vertical Integration Facility

NASA Image and Video Library

2011-08-03

At Space Launch Complex 41, the Juno spacecraft, enclosed in an Atlas payload fairing, was transferred into the Vertical Integration Facility where it was positioned on top of the Atlas rocket stacked inside.

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures.

PubMed

Walther, T; Krysa, A B

2017-12-01

Quantum cascade lasers can be efficient infrared radiation sources and consist of several hundreds of very thin layers arranged in stacks that are repeated periodically. Both the thicknesses of the individual layers as well as the period lengths need to be monitored to high precision. Different transmission electron microscopy methods have been combined to analyse AlGaAs/GaAs quantum cascade laser structures in cross-section. We found a small parabolic variation of the growth rate during deposition, affecting the stack periodicity and a reduced aluminium content of the AlGaAs barriers, whereas their widths as well as those of the GaAs quantum wells agreed with the nominal values within one atomic layer. Growth on an offcut substrate led to facets and steps at the interfaces. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Vertical integration of array-type miniature interferometers at wafer level by using multistack anodic bonding

NASA Astrophysics Data System (ADS)

Wang, Wei-Shan; Wiemer, Maik; Froemel, Joerg; Enderlein, Tom; Gessner, Thomas; Lullin, Justine; Bargiel, Sylwester; Passilly, Nicolas; Albero, Jorge; Gorecki, Christophe

2016-04-01

In this work, vertical integration of miniaturized array-type Mirau interferometers at wafer level by using multi-stack anodic bonding is presented. Mirau interferometer is suitable for MEMS metrology and for medical imaging according to its vertical-, lateral- resolutions and working distances. Miniaturized Mirau interferometer can be a promising candidate as a key component of an optical coherence tomography (OCT) system. The miniaturized array-type interferometer consists of a microlens doublet, a Si-based MEMS Z scanner, a spacer for focus-adjustment and a beam splitter. Therefore, bonding technologies which are suitable for heterogeneous substrates are of high interest and necessary for the integration of MEMS/MOEMS devices. Multi-stack anodic bonding, which meets the optical and mechanical requirements of the MOEMS device, is adopted to integrate the array-type interferometers. First, the spacer and the beam splitter are bonded, followed by bonding of the MEMS Z scanner. In the meanwhile, two microlenses, which are composed of Si and glass wafers, are anodically bonded to form a microlens doublet. Then, the microlens doublet is aligned and bonded with the scanner/spacer/beam splitter stack. The bonded array-type interferometer is a 7- wafer stack and the thickness is approximately 5mm. To separate such a thick wafer stack with various substrates, 2-step laser cutting is used to dice the bonded stack into Mirau chips. To simplify fabrication process of each component, electrical connections are created at the last step by mounting a Mirau chip onto a flip chip PCB instead of through wafer vias. Stability of Au/Ti films on the MEMS Z scanner after anodic bonding, laser cutting and flip chip bonding are discussed as well.

Ocean acoustic interferometry.

PubMed

Brooks, Laura A; Gerstoft, Peter

2007-06-01

Ocean acoustic interferometry refers to an approach whereby signals recorded from a line of sources are used to infer the Green's function between two receivers. An approximation of the time domain Green's function is obtained by summing, over all source positions (stacking), the cross-correlations between the receivers. Within this paper a stationary phase argument is used to describe the relationship between the stacked cross-correlations from a line of vertical sources, located in the same vertical plane as two receivers, and the Green's function between the receivers. Theory and simulations demonstrate the approach and are in agreement with those of a modal based approach presented by others. Results indicate that the stacked cross-correlations can be directly related to the shaded Green's function, so long as the modal continuum of any sediment layers is negligible.

Using quantum dot photoluminescence for load detection

NASA Astrophysics Data System (ADS)

Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

2016-08-01

We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

X, Y, Z positioner

DOEpatents

Goers, G.F.

1987-11-10

A three-axis control for precisely and conveniently adjusting items such as mirrors and lenses is disclosed. The adjuster apparatus includes a vertical stack of three rotatable adjusters. Rotation of the first effects vertical translation, whereas the second and third are eccentric assemblies which interact to effect movement along two angled axes perpendicular to the vertical axis. 13 figs.

X, Y, Z positioner

DOEpatents

Goers, George F.

1987-01-01

A three-axis control for precisely and conveniently adjusting items such as irrors and lenses is disclosed. The adjuster apparatus includes a vertical stack of three rotatable adjusters. Rotation of the first effects vertical translation, whereas the second and third are eccentric assemblies which interact to effect movement along two angled axes perpendicular to the vertical axis.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

PubMed

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

PubMed Central

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

2016-01-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells. PMID:27152356

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Attached Vertical Stacks, More than 8 hours, 10 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Attached Vertical Stacks , 8 Hours or Less, 10 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Attached Vertical Stacks, 8 Hours or Less, 50 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Attached Vertical Stacks , 8 Hours or Less, 25 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Attached Vertical Stacks, More than 8 hours, 25 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Attached Vertical Stacks, More than 8 hours, 50 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments.

PubMed

Ye, Han; Zhou, Jiadong; Er, Dequan; Price, Christopher C; Yu, Zhongyuan; Liu, Yumin; Lowengrub, John; Lou, Jun; Liu, Zheng; Shenoy, Vivek B

2017-12-26

Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.

Tunneling magnetoresistance tuned by a vertical electric field in an AA-stacked graphene bilayer with double magnetic barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dali, E-mail: wangdali@mail.ahnu.edu.cn; National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093; Jin, Guojun, E-mail: gjin@nju.edu.cn

2013-12-21

We investigate the effect of a vertical electric field on the electron tunneling and magnetoresistance in an AA-stacked graphene bilayer modulated by the double magnetic barriers with parallel or antiparallel configuration. The results show that the electronic transmission properties in the system are sensitive to the magnetic-barrier configuration and the bias voltage between the graphene layers. In particular, it is found that for the antiparallel configuration, within the low energy region, the blocking effect is more obvious compared with the case for the parallel configuration, and even there may exist a transmission spectrum gap which can be arbitrarily tuned bymore » the field-induced interlayer bias voltage. We also demonstrate that the significant discrepancy between the conductance for both parallel and antiparallel configurations would result in a giant tunneling magnetoresistance ratio, and further the maximal magnetoresistance ratio can be strongly modified by the interlayer bias voltage. This leads to the possible realization of high-quality magnetic sensors controlled by a vertical electric field in the AA-stacked graphene bilayer.« less

Gate-tunable rectification inversion and photovoltaic detection in graphene/WSe{sub 2} heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Anyuan; Liu, Erfu; Long, Mingsheng

2016-05-30

We studied electrical transport properties including gate-tunable rectification inversion and polarity inversion, in atomically thin graphene/WSe{sub 2} heterojunctions. Such engrossing characteristics are attributed to the gate tunable mismatch of Fermi levels of graphene and WSe{sub 2}. Also, such atomically thin heterostructure shows excellent performances on photodetection. The responsivity of 66.2 mA W{sup −1} (without bias voltage) and 350 A W{sup −1} (with 1 V bias voltage) can be reached. What is more, the devices show great external quantum efficiency of 800%, high detectivity of 10{sup 13} cm Hz{sup 1/2}/W, and fast response time of 30 μs. Our study reveals that vertical stacking of 2D materials has great potentialmore » for multifunctional electronic and optoelectronic device applications in the future.« less

Cool white light-emitting three stack OLED structures for AMOLED display applications.

PubMed

Springer, Ramon; Kang, Byoung Yeop; Lampande, Raju; Ahn, Dae Hyun; Lenk, Simone; Reineke, Sebastian; Kwon, Jang Hyuk

2016-11-28

This paper demonstrates 2-stack and 3-stack white organic light-emitting diodes (WOLEDs) with fluorescent blue and phosphorescent yellow emissive units. The 2-stack and 3-stack WOLED comprises blue-yellow and blue-blue-yellow (blue-yellow-blue) combinations. The position of the yellow emitter and possible cavity lengths in different stack architectures are theoretically and experimentally investigated to reach Commission Internationale de L'Eclairage (CIE) coordinates of near (0.333/0.333). Here, a maximum external quantum efficiency (EQE) of 23.6% and current efficiency of 62.2 cd/A at 1000 cd/m² as well as suitable CIE color coordinates of (0.335/0.313) for the blue-blue-yellow 3-stack hybrid WOLED structure is reported. In addition, the blue-yellow-blue 3-stack architecture exhibits an improved angular dependence compared to the blue-blue-yellow structure at a decreased EQE of 19.1%.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, More than 8 Hours, 25 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks , 8 Hours or Less, 5 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, More than 8 Hours, 5 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, 8 Hours or Less, 10 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, 8 Hours or Less, 50 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, 8 Hours or Less, 25 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, More than 8 Hours, 50 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Methyl Bromide Buffer Zone Distances for Commodity and Structural Fumigation: Active Aeration, Open Area Vertical Stacks, More than 8 Hours, 10 Foot Stack Height

EPA Pesticide Factsheets

This document contains buffer zone tables required by certain methyl bromide commodity fumigant product labels that refer to Buffer Zone Lookup Tables located at epa.gov/pesticide-registration/mbcommoditybuffer on the label.

Energy Savings Potential of SSL in Horticultural Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stober, Kelsey; Lee, Kyung; Yamada, Mary

Report that presents the findings for horticultural lighting applications where light-emitting diode (LED) products are now competing with traditional light sources. The three main categories of indoor horticulture were investigated: supplemented greenhouses, which use electric lighting to extend the hours of daylight, supplement low levels of sunlight on cloudy days, or disrupt periods of darkness to alter plant growth; non-stacked indoor farms, where plants are grown in a single layer on the floor under ceiling-mounted lighting; and vertical farms, where plants are stacked along vertical shelving to maximize grow space, and the lighting is typically mounted within the shelving units.

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

PubMed

Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

2016-05-05

Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

The Importance of Electron Correlation on Stacking Interaction of Adenine-Thymine Base-Pair Step in B-DNA: A Quantum Monte Carlo Study.

PubMed

Hongo, Kenta; Cuong, Nguyen Thanh; Maezono, Ryo

2013-02-12

We report fixed-node diffusion Monte Carlo (DMC) calculations of stacking interaction energy between two adenine(A)-thymine(T) base pairs in B-DNA (AA:TT), for which reference data are available, obtained from a complete basis set estimate of CCSD(T) (coupled-cluster with singles, doubles, and perturbative triples). We consider four sets of nodal surfaces obtained from self-consistent field calculations and examine how the different nodal surfaces affect the DMC potential energy curves of the AA:TT molecule and the resulting stacking energies. We find that the DMC potential energy curves using the different nodes look similar to each other as a whole. We also benchmark the performance of various quantum chemistry methods, including Hartree-Fock (HF) theory, second-order Møller-Plesset perturbation theory (MP2), and density functional theory (DFT). The DMC and recently developed DFT results of the stacking energy reasonably agree with the reference, while the HF, MP2, and conventional DFT methods give unsatisfactory results.

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Lin, Ming-Wei; Lin, Junhao

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE PAGES

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; ...

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Electrolyte matrix in a molten carbonate fuel cell stack

DOEpatents

Reiser, C.A.; Maricle, D.L.

1987-04-21

A fuel cell stack is disclosed with modified electrolyte matrices for limiting the electrolytic pumping and electrolyte migration along the stack external surfaces. Each of the matrices includes marginal portions at the stack face of substantially greater pore size than that of the central body of the matrix. Consequently, these marginal portions have insufficient electrolyte fill to support pumping or wicking of electrolyte from the center of the stack of the face surfaces in contact with the vertical seals. Various configurations of the marginal portions include a complete perimeter, opposite edge portions corresponding to the air plenums and tab size portions corresponding to the manifold seal locations. These margins will substantially limit the migration of electrolyte to and along the porous manifold seals during operation of the electrochemical cell stack. 6 figs.

Electrolyte matrix in a molten carbonate fuel cell stack

DOEpatents

Reiser, Carl A.; Maricle, Donald L.

1987-04-21

A fuel cell stack is disclosed with modified electrolyte matrices for limiting the electrolytic pumping and electrolyte migration along the stack external surfaces. Each of the matrices includes marginal portions at the stack face of substantially greater pore size than that of the central body of the matrix. Consequently, these marginal portions have insufficient electrolyte fill to support pumping or wicking of electrolyte from the center of the stack of the face surfaces in contact with the vertical seals. Various configurations of the marginal portions include a complete perimeter, opposite edge portions corresponding to the air plenums and tab size portions corresponding to the manifold seal locations. These margins will substantially limit the migration of electrolyte to and along the porous manifold seals during operation of the electrochemical cell stack.

Laterally stacked Schottky diodes for infrared sensor applications

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor)

1991-01-01

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Ocean Wave Energy Harvesting Devices

DTIC Science & Technology

2007-04-01

the magnet stack and the tubular wall of the generator and completely prevent the magnet from making direct contact to the tube wall even when the...the 3.1 second device. If no ferrofluid is present, as a long magnetic stack moves inside a tube with a small gap between the magnet surface and the...inside wall of the tube , a very slight deviation from the vertical position can cause the edge of the end of the magnet stack to touch the tube (Fig. 3

Stacked multilayers of alternating reduced graphene oxide and carbon nanotubes for planar supercapacitors

NASA Astrophysics Data System (ADS)

Moon, Geon Dae; Joo, Ji Bong; Yin, Yadong

2013-11-01

A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production.A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production. Electronic supplementary information (ESI) available: Experimental details, SEM and TEM images and additional electrochemical data. See DOI: 10.1039/c3nr04339h

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

High power vertical stacked diode laser development using macro-channel water cooling and hard solder bonding technology

NASA Astrophysics Data System (ADS)

Yu, Dongshan; Liang, Xuejie; Wang, Jingwei; Li, Xiaoning; Nie, Zhiqiang; Liu, Xingsheng

2017-02-01

A novel marco channel cooler (MaCC) has been developed for packaging high power diode vertical stacked (HPDL) lasers, which eliminates many of the issues in commercially-available copper micro-channel coolers (MCC). The MaCC coolers, which do not require deionized water as coolant, were carefully designed for compact size and superior thermal dissipation capability. Indium-free packaging technology was adopted throughout product design and fabrication process to minimize the risk of solder electromigration and thermal fatigue at high current density and long pulse width under QCW operation. Single MaCC unit with peak output power of up to 700W/bar at pulse width in microsecond range and 200W/bar at pulse width in millisecond range has been recorded. Characteristic comparison on thermal resistivity, spectrum, near filed and lifetime have been conducted between a MaCC product and its counterpart MCC product. QCW lifetime test (30ms 10Hz, 30% duty cycle) has also been conducted with distilled water as coolant. A vertical 40-MaCC stack product has been fabricated, total output power of 9 kilowatts has been recorded under QCW mode (3ms, 30Hz, 9% duty cycle).

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P.

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of themore » quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.« less

CdSe quantum dot sensitized solar cells. Shuttling electrons through stacked carbon nanocups.

PubMed

Farrow, Blake; Kamat, Prashant V

2009-08-12

The charge separation between excited CdSe semiconductor quantum dots and stacked-cup carbon nanotubes (SCCNTs) has been successfully tapped to generate photocurrent in a quantum dot sensitized solar cell (QDSC). By employing an electrophoretic deposition technique we have cast SCCNT-CdSe composite films on optically transparent electrodes (OTEs). The quenching of CdSe emission, as well as transient absorption measurements, confirms ultrafast electron transfer to SCCNTs. The rate constant for electron transfer increases from 9.51 x 10(9) s(-1) to 7.04 x 10(10) s(-1) as we decrease the size of CdSe nanoparticles from 4.5 to 3 nm. The ability of SCCNTs to collect and transport electrons from excited CdSe has been established from photocurrent measurements. The morphological and excited state properties of SCCNT-CdSe composites demonstrate their usefulness in energy conversion devices.

Solid oxide fuel cell matrix and modules

DOEpatents

Riley, Brian

1990-01-01

Porous refractory ceramic blocks arranged in an abutting, stacked configuration and forming a three dimensional array provide a support structure and coupling means for a plurality of solid oxide fuel cells (SOFCs). Each of the blocks includes a square center channel which forms a vertical shaft when the blocks are arranged in a stacked array. Positioned within the channel is a SOFC unit cell such that a plurality of such SOFC units disposed within a vertical shaft form a string of SOFC units coupled in series. A first pair of facing inner walls of each of the blocks each include an interconnecting channel hole cut horizontally and vertically into the block walls to form gas exit channels. A second pair of facing lateral walls of each block further include a pair of inner half circular grooves which form sleeves to accommodate anode fuel and cathode air tubes. The stack of ceramic blocks is self-supporting, with a plurality of such stacked arrays forming a matrix enclosed in an insulating refractory brick structure having an outer steel layer. The necessary connections for air, fuel, burnt gas, and anode and cathode connections are provided through the brick and steel outer shell. The ceramic blocks are so designed with respect to the strings of modules that by simple and logical design the strings could be replaced by hot reloading if one should fail. The hot reloading concept has not been included in any previous designs.

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.

PubMed

Barettin, Daniele; Maur, Matthias Auf der; Carlo, Aldo di; Pecchia, Alessandro; Tsatsulnikov, Andrei F; Sakharov, Alexei V; Lundin, Wsevolod V; Nikolaev, Andrei E; Usov, Sergey O; Cherkashin, Nikolay; Hÿtch, Martin J; Karpov, Sergey Yu

2017-01-06

The impact of electromechanical coupling on optical properties of light-emitting diodes (LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical simulations. The structure, i.e. the shape and the average In content of the QDs, has been directly derived from experimental data on out-of-plane strain distribution obtained from the geometric-phase analysis of a high-resolution transmission electron microscopy image of an LED structure grown by metalorganic vapor-phase epitaxy. Using continuum [Formula: see text] calculations, we have studied first the lateral and full electromechanical coupling between the QDs in the active region and its impact on the emission spectrum of a single QD located in the center of the region. Our simulations demonstrate the spectrum to be weakly affected by the coupling despite the strong common strain field induced in the QD active region. Then we analyzed the effect of vertical coupling between vertically stacked QDs as a function of the interdot distance. We have found that QCSE gives rise to a blue-shift of the overall emission spectrum when the interdot distance becomes small enough. Finally, we compared the theoretical spectrum obtained from simulation of the entire active region with an experimental electroluminescence (EL) spectrum. While the theoretical peak emission wavelength of the selected central QD corresponded well to that of the EL spectrum, the width of the latter one was determined by the scatter in the structures of various QDs located in the active region. Good agreement between the simulations and experiment achieved as a whole validates our model based on realistic structure of the QD active region and demonstrates advantages of the applied approach.

A software methodology for compiling quantum programs

NASA Astrophysics Data System (ADS)

Häner, Thomas; Steiger, Damian S.; Svore, Krysta; Troyer, Matthias

2018-04-01

Quantum computers promise to transform our notions of computation by offering a completely new paradigm. To achieve scalable quantum computation, optimizing compilers and a corresponding software design flow will be essential. We present a software architecture for compiling quantum programs from a high-level language program to hardware-specific instructions. We describe the necessary layers of abstraction and their differences and similarities to classical layers of a computer-aided design flow. For each layer of the stack, we discuss the underlying methods for compilation and optimization. Our software methodology facilitates more rapid innovation among quantum algorithm designers, quantum hardware engineers, and experimentalists. It enables scalable compilation of complex quantum algorithms and can be targeted to any specific quantum hardware implementation.

Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi2Se3 and MoS2 atomic layers

PubMed Central

Vargas, Anthony; Liu, Fangze; Lane, Christopher; Rubin, Daniel; Bilgin, Ismail; Hennighausen, Zachariah; DeCapua, Matthew; Bansil, Arun; Kar, Swastik

2017-01-01

Vertical stacking is widely viewed as a promising approach for designing advanced functionalities using two-dimensional (2D) materials. Combining crystallographically commensurate materials in these 2D stacks has been shown to result in rich new electronic structure, magnetotransport, and optical properties. In this context, vertical stacks of crystallographically incommensurate 2D materials with well-defined crystallographic order are a counterintuitive concept and, hence, fundamentally intriguing. We show that crystallographically dissimilar and incommensurate atomically thin MoS2 and Bi2Se3 layers can form rotationally aligned stacks with long-range crystallographic order. Our first-principles theoretical modeling predicts heterocrystal electronic band structures, which are quite distinct from those of the parent crystals, characterized with an indirect bandgap. Experiments reveal striking optical changes when Bi2Se3 is stacked layer by layer on monolayer MoS2, including 100% photoluminescence (PL) suppression, tunable transmittance edge (1.1→0.75 eV), suppressed Raman, and wide-band evolution of spectral transmittance. Disrupting the interface using a focused laser results in a marked the reversal of PL, Raman, and transmittance, demonstrating for the first time that in situ manipulation of interfaces can enable “reconfigurable” 2D materials. We demonstrate submicrometer resolution, “laser-drawing” and “bit-writing,” and novel laser-induced broadband light emission in these heterocrystal sheets. PMID:28740860

Electromagnetic waves in a topological insulator thin film stack: helicon-like wave mode and photonic band structure.

PubMed

Inoue, Jun-ichi

2013-09-09

We theoretically explore the electromagnetic modes specific to a topological insulator superlattice in which topological and conventional insulator thin films are stacked periodically. In particular, we obtain analytic formulas for low energy mode that corresponds to a helicon wave, as well as those for photonic bands. We illustrate that the system can be modeled as a stack of quantum Hall layers whose conductivity tensors alternately change signs, and then we analyze the photonic band structures. This subject is a natural extension of a previous study by Tselis et al., which took into consideration a stack of identical quantum Hall layers but their discussion was limited into a low energy mode. Thus we provide analytic formulas for photonic bands and compare their features between the two systems. Our central findings in the topological insulator superlattice are that a low energy mode corresponding to a helicon wave has linear dispersion instead of the conventional quadratic form, and that a robust gapless photonic band appears although the system considered has spacial periodicity. In addition, we demonstrate that the photonic bands agree with the numerically calculated transmission spectra.

Coaxial multishell nanowires with high-quality electronic interfaces and tunable optical cavities for ultrathin photovoltaics.

PubMed

Kempa, Thomas J; Cahoon, James F; Kim, Sun-Kyung; Day, Robert W; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2012-01-31

Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multishell NWs with highly crystalline, hexagonally-faceted shells, and well-defined coaxial (p/n) and p/intrinsic/n (p/i/n) diode junctions. Designed 200-300 nm diameter p/i/n NW diodes exhibit ultralow leakage currents of approximately 1 fA, and open-circuit voltages and fill-factors up to 0.5 V and 73%, respectively, under one-sun illumination. Single-NW wavelength-dependent photocurrent measurements reveal size-tunable optical resonances, external quantum efficiencies greater than unity, and current densities double those for silicon films of comparable thickness. In addition, finite-difference-time-domain simulations for the measured NW structures agree quantitatively with the photocurrent measurements, and demonstrate that the optical resonances are due to Fabry-Perot and whispering-gallery cavity modes supported in the high-quality faceted nanostructures. Synthetically optimized NW devices achieve current densities of 17 mA/cm(2) and power-conversion efficiencies of 6%. Horizontal integration of multiple NWs demonstrates linear scaling of the absolute photocurrent with number of NWs, as well as retention of the high open-circuit voltages and short-circuit current densities measured for single NW devices. Notably, assembly of 2 NW elements into vertical stacks yields short-circuit current densities of 25 mA/cm(2) with a backside reflector, and simulations further show that such stacking represents an attractive approach for further enhancing performance with projected efficiencies of > 15% for 1.2 μm thick 5 NW stacks.

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; IMEC, Kapeldreef 75, B-3001 Heverlee; Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee

2016-07-11

The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.

PubMed

Pak, Jinsu; Jang, Jingon; Cho, Kyungjune; Kim, Tae-Young; Kim, Jae-Keun; Song, Younggul; Hong, Woong-Ki; Min, Misook; Lee, Hyoyoung; Lee, Takhee

2015-11-28

Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when stacking a p-type organic copper phthalocyanine (CuPc) layer on the MoS2 surface. We observed that the threshold voltage of MoS2 FET could be controlled by stacking the CuPc layers due to a charge transfer phenomenon at the interface. Particularly, we demonstrated that CuPc/MoS2 hybrid devices exhibited high performance as a photodetector compared with the pristine MoS2 FETs, caused by more electron-hole pairs separation at the p-n interface. Furthermore, we found the optimized CuPc thickness (∼2 nm) on the MoS2 surface for the best performance as a photodetector with a photoresponsivity of ∼1.98 A W(-1), a detectivity of ∼6.11 × 10(10) Jones, and an external quantum efficiency of ∼12.57%. Our study suggests that the MoS2 vertical hybrid structure with organic material can be promising as efficient photodetecting devices and optoelectronic circuits.

Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates.

PubMed

Li, Mingze; Wang, Zhenhua; Yang, Liang; Pan, Desheng; Li, Da; Gao, Xuan P A; Zhang, Zhidong

2018-08-03

Controlling the growth direction (planar versus vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional layered materials. We report a simple method to fabricate continuous films of vertical Bi 2 Se 3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi 2 Se 3 nanoplate film, vertical Bi 2 Se 3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi 2 Se 3 nanoplates, we realized an effective tuning of the weak antilocalization effect from topological surface states in Bi 2 Se 3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film.

Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yeongho; Ban, Keun-Yong, E-mail: kban1@asu.edu; Honsberg, Christiana B.

2015-10-26

The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressivemore » strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.« less

Binding and Diffusion of Lithium in Graphite: Quantum Monte Carlo Benchmarks and Validation of van der Waals Density Functional Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganesh, P.; Kim, Jeongnim; Park, Changwon

2014-11-03

In highly accurate diffusion quantum Monte Carlo (QMC) studies of the adsorption and diffusion of atomic lithium in AA-stacked graphite are compared with van der Waals-including density functional theory (DFT) calculations. Predicted QMC lattice constants for pure AA graphite agree with experiment. Pure AA-stacked graphite is shown to challenge many van der Waals methods even when they are accurate for conventional AB graphite. Moreover, the highest overall DFT accuracy, considering pure AA-stacked graphite as well as lithium binding and diffusion, is obtained by the self-consistent van der Waals functional vdW-DF2, although errors in binding energies remain. Empirical approaches based onmore » point charges such as DFT-D are inaccurate unless the local charge transfer is assessed. Our results demonstrate that the lithium carbon system requires a simultaneous highly accurate description of both charge transfer and van der Waals interactions, favoring self-consistent approaches.« less

Face-on stacking and enhanced out-of-plane hole mobility in graphene-templated copper phthalocyanine.

PubMed

Mativetsky, Jeffrey M; Wang, He; Lee, Stephanie S; Whittaker-Brooks, Luisa; Loo, Yueh-Lin

2014-05-25

Efficient out-of-plane charge transport is required in vertical device architectures, such as organic solar cells and organic light emitting diodes. Here, we show that graphene, transferred onto different technologically-relevant substrates, can be used to induce face-on molecular stacking and improve out-of-plane hole transport in copper phthalocyanine thin films.

Analysis of vertical stability limits and vertical displacement event behavior on NSTX-U

NASA Astrophysics Data System (ADS)

Boyer, Mark; Battaglia, Devon; Gerhardt, Stefan; Menard, Jonathan; Mueller, Dennis; Myers, Clayton; Sabbagh, Steven; Smith, David

2017-10-01

The National Spherical Torus Experiment Upgrade (NSTX-U) completed its first run campaign in 2016, including commissioning a larger center-stack and three new tangentially aimed neutral beam sources. NSTX-U operates at increased aspect ratio due to the larger center-stack, making vertical stabilization more challenging. Since ST performance is improved at high elongation, improvements to the vertical control system were made, including use of multiple up-down-symmetric flux loop pairs for real-time estimation, and filtering to remove noise. Similar operating limits to those on NSTX (in terms of elongation and internal inductance) were achieved, now at higher aspect ratio. To better understand the observed limits and project to future operating points, a database of vertical displacement events and vertical oscillations observed during the plasma current ramp-up on NSTX/NSTX-U has been generated. Shots were clustered based on the characteristics of the VDEs/oscillations, and the plasma parameter regimes associated with the classes of behavior were studied. Results provide guidance for scenario development during ramp-up to avoid large oscillations at the time of diverting, and provide the means to assess stability of target scenarios for the next campaign. Results will also guide plans for improvements to the vertical control system. Work supported by U.S. D.O.E. Contract No. DE-AC02-09CH11466.

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

The Direct FuelCell™ stack engineering

NASA Astrophysics Data System (ADS)

Doyon, J.; Farooque, M.; Maru, H.

FuelCell Energy (FCE) has developed power plants in the size range of 300 kW to 3 MW for distributed power generation. Field-testing of the sub-megawatt plants is underway. The FCE power plants are based on its Direct FuelCell™ (DFC) technology. This is so named because of its ability to generate electricity directly from a hydrocarbon fuel, such as natural gas, by reforming it inside the fuel cell stack itself. All FCE products use identical 8000 cm 2 cell design, approximately 350-400 cells per stack, external gas manifolds, and similar stack compression systems. The difference lies in the packaging of the stacks inside the stack module. The sub-megawatt system stack module contains a single horizontal stack whereas the MW-class stack module houses four identical vertical stacks. The commonality of the design, internal reforming features, and atmospheric operation simplify the system design, reduce cost, improve efficiency, increase reliability and maintainability. The product building-block stack design has been advanced through three full-size stack operations at company's headquarters in Danbury, CT. The initial proof-of-concept of the full-size stack design was verified in 1999, followed by a 1.5 year of endurance verification in 2000-2001, and currently a value-engineered stack version is in operation. This paper discusses the design features, important engineering solutions implemented, and test results of FCE's full-size DFC stacks.

Assembly Test Article (ATA)

NASA Technical Reports Server (NTRS)

Ricks, Glen A.

1988-01-01

The assembly test article (ATA) consisted of two live loaded redesigned solid rocket motor (RSRM) segments which were assembled and disassembled to simulate the actual flight segment stacking process. The test assembly joint was flight RSRM design, which included the J-joint insulation design and metal capture feature. The ATA test was performed mid-November through 24 December 1987, at Kennedy Space Center (KSC), Florida. The purpose of the test was: certification that vertical RSRM segment mating and separation could be accomplished without any damage; verification and modification of the procedures in the segment stacking/destacking documents; and certification of various GSE to be used for flight assembly and inspection. The RSRM vertical segment assembly/disassembly is possible without any damage to the insulation, metal parts, or seals. The insulation J-joint contact area was very close to the predicted values. Numerous deviations and changes to the planning documents were made to ensure the flight segments are effectively and correctly stacked. Various GSE were also certified for use on flight segments, and are discussed in detail.

Lasing characteristics of InAs quantum dot laers on InP substrate

NASA Technical Reports Server (NTRS)

Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

2003-01-01

Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

Graphene materials having randomly distributed two-dimensional structural defects

DOEpatents

Kung, Harold H; Zhao, Xin; Hayner, Cary M; Kung, Mayfair C

2013-10-08

Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

Graphene materials having randomly distributed two-dimensional structural defects

DOEpatents

Kung, Harold H.; Zhao, Xin; Hayner, Cary M.; Kung, Mayfair C.

2016-05-31

Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.

The operation principle of the well in quantum dot stack infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jheng-Han; Wu, Zong-Ming; Liao, Yu-Min

2013-12-28

The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ∼230 K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77 K, the current transports through the InAs quantum dot channel, whereas atmore » temperatures higher than 77 K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.« less

Band engineering in twisted molybdenum disulfide bilayers

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Liao, Chengwei; Ouyang, Gang

2018-05-01

In order to explore the theoretical relationship between interlayer spacing, interaction and band offset at the atomic level in vertically stacked two-dimensional (2D) van der Waals (vdW) structures, we propose an analytical model to address the evolution of interlayer vdW coupling with random stacking configurations in MoS2 bilayers based on the atomic-bond-relaxation correlation mechanism. We found that interlayer spacing changes substantially with respect to the orientations, and the bandgap increases from 1.53 eV (AB stacking) to 1.68 eV (AA stacking). Our results reveal that the evolution of interlayer vdW coupling originates from the interlayer interaction, leading to interlayer separations and electronic properties changing with stacking configurations. Our predictions constitute a demonstration of twist engineering the band shift in the emergent class of 2D crystals, transition-metal dichalcogenides.

Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics

NASA Astrophysics Data System (ADS)

Nuñez-Moraleda, Bernardo; Pizarro, Joaquin; Guerrero, Elisa; Guerrero-Lebrero, Maria P.; Yáñez, Andres; Molina, Sergio Ignacio; Galindo, Pedro Luis

2014-11-01

In this paper, stress fields at the surface of the capping layer of self-assembled InAsP quantum wires grown on an InP (001) substrate have been determined from atomistic models using molecular dynamics and Stillinger-Weber potentials. To carry out these calculations, the quantum wire compositional distribution was extracted from previous works, where the As and P distributions were determined by electron energy loss spectroscopy and high-resolution aberration-corrected Z-contrast imaging. Preferential sites for the nucleation of wires on the surface of the capping layer were studied and compared with (i) previous simulations using finite element analysis to solve anisotropic elastic theory equations and (ii) experimentally measured locations of stacked wires. Preferential nucleation sites of stacked wires were determined by the maximum stress location at the MD model surface in good agreement with experimental results and those derived from finite element analysis. This indicates that MD simulations based on empirical potentials provide a suitable and flexible tool to study strain dependent atom processes.

Submonolayer Quantum Dot Infrared Photodetector

NASA Technical Reports Server (NTRS)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Studies on the π-π stacking features of imidazole units present in a series of 5-amino-1-alkylimidazole-4-carboxamides

NASA Astrophysics Data System (ADS)

Ray, Sibdas; Das, Aniruddha

2015-06-01

Reaction of 2-ethoxymethyleneamino-2-cyanoacetamide with primary alkyl amines in acetonitrile solvent affords 1-substituted-5-aminoimidazole-4-carboxamides. Single crystal X-ray diffraction studies of these imidazole compounds show that there are both anti-parallel and syn-parallel π-π stackings between two imidazole units in parallel-displaced (PD) conformations and the distance between two π-π stacked imidazole units depends mainly on the anti/ syn-parallel nature and to some extent on the alkyl group attached to N-1 of imidazole; molecules with anti-parallel PD-stacking arrangements of the imidazole units have got vertical π-π stacking distance short enough to impart stabilization whereas the imidazole unit having syn-parallel stacking arrangement have got much larger π-π stacking distances. DFT studies on a pair of anti-parallel imidazole units of such an AICA lead to curves for 'π-π stacking stabilization energy vs. π-π stacking distance' which have got similarity with the 'Morse potential energy diagram for a diatomic molecule' and this affords to find out a minimum π-π stacking distance corresponding to the maximum stacking stabilization energy between the pair of imidazole units. On the other hand, a DFT calculation based curve for 'π-π stacking stabilization energy vs. π-π stacking distance' of a pair of syn-parallel imidazole units is shown to have an exponential nature.

Nuclear reactor reflector

DOEpatents

Hopkins, Ronald J.; Land, John T.; Misvel, Michael C.

1994-01-01

A nuclear reactor reflector is disclosed that comprises a stack of reflector blocks with vertical water flow passages to cool the reflector. The interface between blocks is opposite support points for reactor fuel rods. Water flows between the reflector and the reactor barrel from passages in a bottom block. The top block contains a flange to limit this flow and the flange has a slot to receive an alignment pin that is welded to the barrel. The pin is held in the slot by two removable shims. Alignment bars extend the length of the stack in slots machined in each block when the stack is assembled.

Nuclear reactor reflector

DOEpatents

Hopkins, R.J.; Land, J.T.; Misvel, M.C.

1994-06-07

A nuclear reactor reflector is disclosed that comprises a stack of reflector blocks with vertical water flow passages to cool the reflector. The interface between blocks is opposite support points for reactor fuel rods. Water flows between the reflector and the reactor barrel from passages in a bottom block. The top block contains a flange to limit this flow and the flange has a slot to receive an alignment pin that is welded to the barrel. The pin is held in the slot by two removable shims. Alignment bars extend the length of the stack in slots machined in each block when the stack is assembled. 12 figs.

Stacked multilayers of alternating reduced graphene oxide and carbon nanotubes for planar supercapacitors.

PubMed

Moon, Geon Dae; Joo, Ji Bong; Yin, Yadong

2013-12-07

A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production.

Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taniguchi, Chisato; Ichimura, Aiko; Ohtani, Noboru, E-mail: ohtani.noboru@kwansei.ac.jp

The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and provides a detailed explanation of the annealing-induced formation of double layer Shockley-type stacking faults in heavily nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and successfully explained the shrinkage of stacking faults during annealing at even higher temperatures. The model also succeeded inmore » accounting for the aluminum co-doping effect in heavily nitrogen-doped 4H-SiC crystals, in that the stacking fault formation is suppressed when aluminum acceptors are co-doped in the crystals.« less

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakajima, Yoshitake; Dapkus, P. Daniel

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaNmore » QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.« less

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

NASA Astrophysics Data System (ADS)

Nakajima, Yoshitake; Dapkus, P. Daniel

2016-08-01

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I1 type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Software Systems for High-performance Quantum Computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humble, Travis S; Britt, Keith A

Quantum computing promises new opportunities for solving hard computational problems, but harnessing this novelty requires breakthrough concepts in the design, operation, and application of computing systems. We define some of the challenges facing the development of quantum computing systems as well as software-based approaches that can be used to overcome these challenges. Following a brief overview of the state of the art, we present models for the quantum programming and execution models, the development of architectures for hybrid high-performance computing systems, and the realization of software stacks for quantum networking. This leads to a discussion of the role that conventionalmore » computing plays in the quantum paradigm and how some of the current challenges for exascale computing overlap with those facing quantum computing.« less

Quantum dots for GaAs-based surface emitting lasers at 1300 nm

NASA Astrophysics Data System (ADS)

Grundmann, M.; Ledentsov, N. N.; Hopfer, F.; Heinrichsdorff, F.; Guffarth, F.; Bimberg, D.; Ustinov, V. M.; Zhukov, A. E.; Kovsh, A. R.; Maximov, M. V.; Musikhin, Yu. G.; Alferov, Zh. I.; Lott, J. A.; Zhakharov, N. D.; Werner, P.

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

Quantum Walk Schemes for Universal Quantum Computation

NASA Astrophysics Data System (ADS)

Underwood, Michael S.

Random walks are a powerful tool for the efficient implementation of algorithms in classical computation. Their quantum-mechanical analogues, called quantum walks, hold similar promise. Quantum walks provide a model of quantum computation that has recently been shown to be equivalent in power to the standard circuit model. As in the classical case, quantum walks take place on graphs and can undergo discrete or continuous evolution, though quantum evolution is unitary and therefore deterministic until a measurement is made. This thesis considers the usefulness of continuous-time quantum walks to quantum computation from the perspectives of both their fundamental power under various formulations, and their applicability in practical experiments. In one extant scheme, logical gates are effected by scattering processes. The results of an exhaustive search for single-qubit operations in this model are presented. It is shown that the number of distinct operations increases exponentially with the number of vertices in the scattering graph. A catalogue of all graphs on up to nine vertices that implement single-qubit unitaries at a specific set of momenta is included in an appendix. I develop a novel scheme for universal quantum computation called the discontinuous quantum walk, in which a continuous-time quantum walker takes discrete steps of evolution via perfect quantum state transfer through small 'widget' graphs. The discontinuous quantum-walk scheme requires an exponentially sized graph, as do prior discrete and continuous schemes. To eliminate the inefficient vertex resource requirement, a computation scheme based on multiple discontinuous walkers is presented. In this model, n interacting walkers inhabiting a graph with 2n vertices can implement an arbitrary quantum computation on an input of length n, an exponential savings over previous universal quantum walk schemes. This is the first quantum walk scheme that allows for the application of quantum error correction. The many-particle quantum walk can be viewed as a single quantum walk undergoing perfect state transfer on a larger weighted graph, obtained via equitable partitioning. I extend this formalism to non-simple graphs. Examples of the application of equitable partitioning to the analysis of quantum walks and many-particle quantum systems are discussed.

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

PubMed Central

2015-01-01

The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here, we demonstrate that an atomically thin and sharp heterojunction p–n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2). Electrical measurements of the vertically staked WSe2/MoS2 heterojunctions reveal excellent current rectification behavior with an ideality factor of 1.2. Photocurrent mapping shows rapid photoresponse over the entire overlapping region with a highest external quantum efficiency up to 12%. Electroluminescence studies show prominent band edge excitonic emission and strikingly enhanced hot-electron luminescence. A systematic investigation shows distinct layer-number dependent emission characteristics and reveals important insight about the origin of hot-electron luminescence and the nature of electron–orbital interaction in TMDs. We believe that these atomically thin heterojunction p–n diodes represent an interesting system for probing the fundamental electro-optical properties in TMDs and can open up a new pathway to novel optoelectronic devices such as atomically thin photodetectors, photovoltaics, as well as spin- and valley-polarized light emitting diodes, on-chip lasers. PMID:25157588

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet Epitaxy

NASA Astrophysics Data System (ADS)

Elborg, Martin; Noda, Takeshi; Mano, Takaaki; Kuroda, Takashi; Yao, Yuanzhao; Sakuma, Yoshiki; Sakoda, Kazuaki

2017-11-01

We successfully grow vertically aligned quantum ring-dot structures by Multiple Droplet Epitaxy technique. The growth is achieved by depositing GaAs quantum rings in a first droplet epitaxy process which are subsequently covered by a thin AlGaAs barrier. In a second droplet epitaxy process, Ga droplets preferentially position in the center indentation of the ring as well as attached to the edge of the ring in [ 1 1 bar 0 ] direction. By designing the ring geometry, full selectivity for the center position of the ring is achieved where we crystallize the droplets into quantum dots. The geometry of the ring and dot as well as barrier layer can be controlled in separate growth steps. This technique offers great potential for creating complex quantum molecules for novel quantum information technologies.

Strongly Interacting Fermi Gases In Two Dimensions

DTIC Science & Technology

2012-01-03

Correlated Quantum Fluids: From Ultracold Quantum Gases to QCD Plasmas. Figure 2 Spin Transport in Spin-Imbalanced, strongly interacting...atoms becomes confined to a stack of two-dimensional layers formed by a one-dimensional optical lattice . Decreasing the dimensionality leads to the...opening of a gap in radiofrequency spectra, even on the BCS-side of a Feshbach resonance. With increasing lattice depth, the measured binding energy

Time-Lapse Video of SLS Engine Section Test Article Being Stacked at Michoud

NASA Image and Video Library

2017-04-25

This time-lapse video shows the Space Launch System engine section structural qualification test article being stacked at NASA's Michoud Assembly Facility in New Orleans. The rocket's engine section is the bottom of the core stage and houses the four RS-25 engines. The engine section test article was moved to Michoud's Cell A in Building 110 for vertical stacking with hardware that simulates the rocket's liquid hydrogen tank, which is the fuel tank that joins to the engine section. Once stacked, the entire test article will load onto the barge Pegasus and ship to NASA's Marshall Space Flight Center in Huntsville, Alabama. There, it will be subjected to millions of pounds of force during testing to ensure the hardware can withstand the incredible stresses of launch.

SLS Engine Section Test Article Moved for Stacking at Michoud

NASA Image and Video Library

2017-04-25

Stacking is underway for the Space Launch System core stage engine section structural qualification test article at NASA's Michoud Assembly Facility in New Orleans. The rocket's engine section is the bottom of the core stage and houses the four RS-25 engines. The engine section test article was moved to Michoud's Cell A in Building 110 for vertical stacking with hardware that simulates the rocket's liquid hydrogen tank, which is the fuel tank that joins to the engine section. Once stacked, the entire test article will load onto the barge Pegasus and ship to NASA's Marshall Space Flight Center in Huntsville, Alabama. There, it will be subjected to millions of pounds of force during testing to ensure the hardware can withstand the incredible stresses of launch.

Stacked white OLED having separate red, green and blue sub-elements

DOEpatents

Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

2014-07-01

The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

Characteristics of square pore and low noise microchannel plate stacks. [for x-ray astronomy

NASA Technical Reports Server (NTRS)

Siegmund, Oswald H. W.; Marsh, Daniel; Stock, Joseph; Gaines, Geoffrey

1992-01-01

An evaluation is conducted of several square-pore microchannel plates (MCPs) with either 25- or 85-micron diameter pores and 80:1 or 50:1 channel length/diameter ratio. Flat field measurements show that the 25-micron-pored MCPs, unlike those with 85-micron pores, exhibit periodic modulation; this may be due to the MCP stacking configurations. Attention is given to the relative quantum detection efficiency advantages of the two MCPs.

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

High-Stacking-Density, Superior-Roughness LDH Bridged with Vertically Aligned Graphene for High-Performance Asymmetric Supercapacitors.

PubMed

Guo, Wei; Yu, Chang; Li, Shaofeng; Yang, Juan; Liu, Zhibin; Zhao, Changtai; Huang, Huawei; Zhang, Mengdi; Han, Xiaotong; Niu, Yingying; Qiu, Jieshan

2017-10-01

The high-performance electrode materials with tuned surface and interface structure and functionalities are highly demanded for advanced supercapacitors. A novel strategy is presented to conFigure high-stacking-density, superior-roughness nickel manganese layered double hydroxide (LDH) bridged by vertically aligned graphene (VG) with nickel foam (NF) as the conductive collector, yielding the LDH-NF@VG hybrids for asymmetric supercapacitors. The VG nanosheets provide numerous electron transfer channels for quick redox reactions, and well-developed open structure for fast mass transport. Moreover, the high-stacking-density LDH grown and assembled on VG nanosheets result in a superior hydrophilicity derived from the tuned nano/microstructures, especially microroughness. Such a high stacking density with abundant active sites and superior wettability can be easily accessed by aqueous electrolytes. Benefitting from the above features, the LDH-NF@VG can deliver a high capacitance of 2920 F g -1 at a current density of 2 A g -1 , and the asymmetric supercapacitor with the LDH-NF@VG as positive electrode and activated carbon as negative electrode can deliver a high energy density of 56.8 Wh kg -1 at a power density of 260 W kg -1 , with a high specific capacitance retention rate of 87% even after 10 000 cycles. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

DTIC Science & Technology

2013-01-01

013110 (2013) Demonstration of high performance bias-selectable dual- band short-/mid-wavelength infrared photodetectors based on type-II InAs/ GaSb ...been used for the growth of QD structures . These include the formation of self-assembled QD, for example, Stranski-Krastanov (SK) growth mode,8,9 atomic...confinement in SML-QD and the reduction in the amount of InAs used per layer of QD can help stack more layers in a 3-dimensional QD structure . Several

Role of surface states and defects in the ultrafast nonlinear optical properties of CuS quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mary, K. A. Ann; Unnikrishnan, N. V., E-mail: nvu100@yahoo.com; Philip, Reji

2014-07-01

We report facile preparation of water dispersible CuS quantum dots (2–4 nm) and nanoparticles (5–11 nm) through a nontoxic, green, one-pot synthesis method. Optical and microstructural studies indicate the presence of surface states and defects (dislocations, stacking faults, and twins) in the quantum dots. The smaller crystallite size and quantum dot formation have significant effects on the high energy excitonic and low energy plasmonic absorption bands. Effective two-photon absorption coefficients measured using 100 fs laser pulses employing open-aperture Z-scan in the plasmonic region of 800 nm reveal that CuS quantum dots are better ultrafast optical limiters compared to CuS nanoparticles.

Measurements and simulations of the optical gain and anti-reflection coating modal reflectivity in quantum cascade lasers with multiple active region stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bidaux, Y., E-mail: yves.bidaux@alpeslasers.ch; Alpes Lasers SA, 1-3 Maximilien-de-Meuron, CH-2000 Neuchatel; Terazzi, R.

2015-09-07

We report spectrally resolved gain measurements and simulations for quantum cascade lasers (QCLs) composed of multiple heterogeneous stacks designed for broadband emission in the mid-infrared. The measurement method is first demonstrated on a reference single active region QCL based on a double-phonon resonance design emitting at 7.8 μm. It is then extended to a three-stack active region based on bound-to-continuum designs with a broadband emission range from 7.5 to 10.5 μm. A tight agreement is found with simulations based on a density matrix model. The latter implements exhaustive microscopic scattering and dephasing sources with virtually no fitting parameters. The quantitative agreement ismore » furthermore assessed by measuring gain coefficients obtained by studying the threshold current dependence with the cavity length. These results are particularly relevant to understand fundamental gain mechanisms in complex semiconductor heterostructure QCLs and to move towards efficient gain engineering. Finally, the method is extended to the measurement of the modal reflectivity of an anti-reflection coating deposited on the front facet of the broadband QCL.« less

Mechanical sieve for screening mineral samples

NASA Technical Reports Server (NTRS)

Otto, W. P.

1970-01-01

Mechanical sieve consists of three horizontal screens mounted in a vertical stack. A combination of rotation and tapping produces an even flow across the screens, dislodges trapped particles, an ensures rapid segregation of the sample.

Advancements in high-power diode laser stacks for defense applications

NASA Astrophysics Data System (ADS)

Pandey, Rajiv; Merchen, David; Stapleton, Dean; Patterson, Steve; Kissel, Heiko; Fassbender, Wilhlem; Biesenbach, Jens

2012-06-01

This paper reports on the latest advancements in vertical high-power diode laser stacks using micro-channel coolers, which deliver the most compact footprint, power scalability and highest power/bar of any diode laser package. We present electro-optical (E-O) data on water-cooled stacks with wavelengths ranging from 7xx nm to 9xx nm and power levels of up to 5.8kW, delivered @ 200W/bar, CW mode, and a power-conversion efficiency of >60%, with both-axis collimation on a bar-to-bar pitch of 1.78mm. Also, presented is E-O data on a compact, conductively cooled, hardsoldered, stack package based on conventional CuW and AlN materials, with bar-to-bar pitch of 1.8mm, delivering average power/bar >15W operating up to 25% duty cycle, 10ms pulses @ 45C. The water-cooled stacks can be used as pump-sources for diode-pumped alkali lasers (DPALs) or for more traditional diode-pumped solid-state lasers (DPSSL). which are power/brightness scaled for directed energy weapons applications and the conductively-cooled stacks as illuminators.

Parametric study of thermal storage containing rocks or fluid filled cans for solar heating and cooling, phase 2

NASA Technical Reports Server (NTRS)

Saha, H.

1981-01-01

The test data and an analysis of the heat transfer characteristics of a solar thermal energy storage bed utilizing water filled cans and standard bricks as energy storage medium are presented. This experimental investigation was initiated to find a usable heat intensive solar thermal storage device other than rock storage and water tank. Four different sizes of soup cans were stacked in a chamber in three different arrangements-vertical, horizontal, and random. Air is used as transfer medium for charging and discharge modes at three different mass flow rates and inlet air temperature respectively. These results are analyzed and compared, which show that a vertical stacking and medium size cans with Length/Diameter (L/D) ratio close to one have better average characteristics of heat transfer and pressure drop.

Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

PubMed Central

Gao, Teng; Song, Xiuju; Du, Huiwen; Nie, Yufeng; Chen, Yubin; Ji, Qingqing; Sun, Jingyu; Yang, Yanlian; Zhang, Yanfeng; Liu, Zhongfan

2015-01-01

In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moiré patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics. PMID:25869236

Stacked Fresnel Zone Plates for High Energy X-rays

NASA Astrophysics Data System (ADS)

Snigireva, Irina; Snigirev, Anatoly; Vaughan, Gavin; Di Michiel, Marco; Kohn, Viktor; Yunkin, Vyacheslav; Grigoriev, Maxim

2007-01-01

A stacking technique was developed in order to increase focusing efficiency of Fresnel zone plates (FZP) at high energies. Two identical Si chips each of which containing 9 FZPs were used for stacking. Alignment of the chips was achieved by on-line observation of the moiré pattern. The formation of moiré patterns was studied theoretically and experimentally at different experimental conditions. To provide the desired stability Si-chips were bonded together with slow solidification speed epoxy glue. A technique of angular alignment in order to compensate a linear displacement in the process of gluing was proposed. Two sets of stacked FZPs were experimentally tested to focus 15 and 50 keV x rays. The gain in the efficiency by factor 2.5 was demonstrated at 15 keV. The focal spot of 1.8 μm vertically and 14 μm horizontally with 35% efficiency was measured at 50 keV. Forecast for the stacking of nanofocusing FZPs was discussed.

Hard X-ray focusing by stacked Fresnel zone plates

NASA Astrophysics Data System (ADS)

Snigireva, Irina; Snigirev, Anatoly; Kohn, Viktor; Yunkin, Vyacheslav; Grigoriev, Maxim; Kuznetsov, Serguei; Vaughan, Gavin; Di Michiel, Marco

2007-09-01

Stacking technique was developed in order to increase focusing efficiency of Fresnel zone plates at high energies. Two identical Si chips each of which containing Fresnel zone plates were used for stacking. Alignment of the chips was achieved by on-line observation of the moiré pattern from the two zone plates. The formation of moiré patterns was studied theoretically and experimentally at different experimental conditions. To provide the desired stability Si-chips with zone plates were bonded together with slow solidification speed epoxy glue. Technique of angular alignment in order to compensate a linear displacement in the process of gluing was proposed. Two sets of stacked FZPs were produced and experimentally tested to focus 15 and 50 keV X-rays. Gain in the efficiency by factor 2.5 was demonstrated at 15 keV. Focal spot of 1.8 μm vertically and 14 μm horizontally with 35% efficiency was measured at 50 keV. Forecast for the stacking of nanofocusing Fresnel zone plates was discussed.

Tunable dielectric response, resistive switching, and unconventional transport in SrTiO3

NASA Astrophysics Data System (ADS)

Mikheev, Evgeny

The first section of this thesis discusses integration of SR TiO3 grown by molecular beam epitaxy (MBE) in vertical device structures. One target application is as a tunable dielectric. Parallel plate capacitors based on epitaxial Pt(001) bottom electrodes and (Ba,Sr)TiO 3 dielectric layers grown by MBE are demonstrated. Optimization of structural quality of the vertical stack is shown to produce very low dielectric loss combined with very high tunability of the dielectric constant by DC bias. This results in considerable improvement of common figures of merit for varactor performance in comparison to previous reports. Another target application for transition metals oxides is in resistive switching memories, which are based on the hysteretic current-voltage response observed in many oxide-based Schottky junctions and capacitors. A study on the role of metal/oxide interface quality is presented. In particular, the use of epitaxial Pt(001) as Schottky contacts to Nb:SRTiO 3 is shown to suppress resistive switching hysteresis by eliminating unintentional contributions to interface capacitance. Such uncontrolled factors are discussed as a probable root cause for poor reproducibility in resistive switching memories, currently a ubiquitous challenge in the field. Potential routes towards stabilizing reproducible switching through intentional control of defect densities in high-quality structures are discussed, including a proof of concept demonstration using Schottky junctions incorporating intentionally non-stoichiometric SRTiO3 interlayers grown by MBE. The second section of this thesis is concerned with unconventional electronic transport in SRTiO3. A systematic description of scattering mechanisms will be presented for three related material systems: uniformly-doped SRTiO3, two-dimensional electron liquids (2DEL) at SRTiO3/RTiO 3 interfaces (R = Gd, Sm) and confined 2DELs in RTiO3/SRTiO3/ RTiO3 quantum wells. In particular, the prevalence of a well-defined T2 scattering rate in doped SRTiO3 will be discussed as being incompatible with its traditional assignment as electron-electron scattering in a Fermi liquid. In the case of ultrathin SRTiO3 quantum wells bound by RTiO3, evidence will be presented for the existence of a quantum critical point. This refers to a quantum phase transition at zero temperature towards an ordered phase in SRTiO 3. This transition is driven by increasing confinement of the 2DEL, with a critical point located at the 5 SrO layer thickness of SRTiO 3. It is manifested in anomalous temperature exponents of the power law resistivity. Additionally, a well-defined trend for the separation of the Hall and longitudinal scattering rates will be presented, analogously to a similar effect observed in the normal state of high-Tc superconductors. In particular, a unique pattern of residual scattering separation was documented, consistent with a quantum critical correction to the Hall lifetime that is divergent at the quantum critical point.

Continuous-time quantum walks on star graphs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salimi, S.

2009-06-15

In this paper, we investigate continuous-time quantum walk on star graphs. It is shown that quantum central limit theorem for a continuous-time quantum walk on star graphs for N-fold star power graph, which are invariant under the quantum component of adjacency matrix, converges to continuous-time quantum walk on K{sub 2} graphs (complete graph with two vertices) and the probability of observing walk tends to the uniform distribution.

STS-106 orbiter Atlantis rolls over to the VAB

NASA Technical Reports Server (NTRS)

2000-01-01

Inside the Vehicle Assembly Building (VAB), overhead cranes move above the orbiter Atlantis in order to lift it to vertical. When vertical, the orbiter will be placed aboard the mobile launcher platform (MLP) for stacking with the solid rocket boosters and external tank. Atlantis is scheduled to launch Sept. 8 on mission STS-106, the fourth construction flight to the International Space Station, with a crew of seven.

Designing new classes of high-power, high-brightness VECSELs

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Zakharian, A. R.; Hader, J.; Koch, Stephan W.

2005-10-01

Optically-pumped vertical external cavity semiconductor lasers offer the exciting possibility of designing kW-class solid state lasers that provide significant advantages over their doped YAG, thin-disk YAG and fiber counterparts. The basic VECSEL/OPSL (optically-pumped semiconductor laser) structure consists of a very thin (approximately 6 micron thick) active mirror consisting of a DBR high-reflectivity stack followed by a multiple quantum well resonant periodic (RPG) structure. An external mirror (reflectivity typically between 94%-98%) provides conventional optical feedback to the active semiconductor mirror chip. The "cold" cavity needs to be designed to take into account the semiconductor sub-cavity resonance shift with temperature and, importantly, the more rapid shift of the semiconductor material gain peak with temperature. Thermal management proves critical in optimizing the device for serious power scaling. We will describe a closed-loop procedure that begins with a design of the semiconductor active epi structure. This feeds into the sub-cavity optimization, optical and thermal transport within the active structure and thermal transport though the various heat sinking elements. Novel schemes for power scaling beyond current record performances will be discussed.

Materials and processing science: Limits for microelectronics

NASA Astrophysics Data System (ADS)

Rosenberg, R.

1988-09-01

The theme of this talk will be to illustrate examples of technologies that will drive materials and processing sciences to the limit and to describe some of the research being pursued to understand materials interactions which are pervasive to projected structure fabrication. It is to be expected that the future will see a progression to nanostructures where scaling laws will be tested and quantum transport will become more in evidence, to low temperature operation for tighter control and improved performance, to complex vertical profiles where 3D stacking and superlattices will produce denser packing and device flexibility, to faster communication links with optoelectronics, and to compatible packaging technologies. New low temperature processing techniques, such as epitaxy of silicon, PECVD of dielectrics, low temperature high pressure oxidation, silicon-germanium heterostructures, etc., must be combined with shallow metallurgies, new lithographic technologies, maskless patterning, rapid thermal processing (RTP) to produce needed profile control, reduce process incompatibilities and develop new device geometries. Materials interactions are of special consequence for chip substrates and illustrations of work in metal-ceramic and metal-polymer adhesion will be offered.

Isotope engineering of van der Waals interactions in hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Vuong, T. Q. P.; Liu, S.; van der Lee, A.; Cuscó, R.; Artús, L.; Michel, T.; Valvin, P.; Edgar, J. H.; Cassabois, G.; Gil, B.

2018-02-01

Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (10B and 11B) compared to those with the natural distribution of boron (20 at% 10B and 80 at% 11B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10BN than in 11BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

Isotope engineering of van der Waals interactions in hexagonal boron nitride.

PubMed

Vuong, T Q P; Liu, S; Van der Lee, A; Cuscó, R; Artús, L; Michel, T; Valvin, P; Edgar, J H; Cassabois, G; Gil, B

2018-02-01

Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes ( 10 B and 11 B) compared to those with the natural distribution of boron (20 at% 10 B and 80 at% 11 B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10 BN than in 11 BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces.

PubMed

Corfdir, Pierre; Li, Hong; Marquardt, Oliver; Gao, Guanhui; Molas, Maciej R; Zettler, Johannes K; van Treeck, David; Flissikowski, Timur; Potemski, Marek; Draxl, Claudia; Trampert, Achim; Fernández-Garrido, Sergio; Grahn, Holger T; Brandt, Oliver

2018-01-10

In semiconductor quantum-wire heterostructures, interface roughness leads to exciton localization and to a radiative decay rate much smaller than that expected for structures with flat interfaces. Here, we uncover the electronic and optical properties of the one-dimensional extended defects that form at the intersection between stacking faults and inversion domain boundaries in GaN nanowires. We show that they act as crystal-phase quantum wires, a novel one-dimensional quantum system with atomically flat interfaces. These quantum wires efficiently capture excitons whose radiative decay gives rise to an optical doublet at 3.36 eV at 4.2 K. The binding energy of excitons confined in crystal-phase quantum wires is measured to be more than twice larger than that of the bulk. As a result of their unprecedented interface quality, these crystal-phase quantum wires constitute a model system for the study of one-dimensional excitons.

Studies on complex π-π and T-stacking features of imidazole and phenyl/p-halophenyl units in series of 5-amino-1-(phenyl/p-halophenyl)imidazole-4-carboxamides and their carbonitrile derivatives: Role of halogens in tuning of conformation

NASA Astrophysics Data System (ADS)

Das, Aniruddha

2017-11-01

5-amino-1-(phenyl/p-halophenyl)imidazole-4-carboxamides (N-phenyl AICA) (2a-e) and 5-amino-1-(phenyl/p-halophenyl)imidazole-4-carbonitriles (N-phenyl AICN) (3a-e) had been synthesized. X-ray crystallographic studies of 2a-e and 3a-e had been performed to identify any distinct change in stacking patterns in their crystal lattice. Single crystal X-ray diffraction studies of 2a-e revealed π-π stack formations with both imidazole and phenyl/p-halophenyl units in anti and syn parallel-displaced (PD)-type dispositions. No π-π stacking of imidazole occurred when the halogen substituent is bromo or iodo; π-π stacking in these cases occurred involving phenyl rings only. The presence of an additional T-stacking had been observed in crystal lattices of 3a-e. Vertical π-π stacking distances in anti-parallel PD-type arrangements as well as T-stacking distances had shown stacking distances short enough to impart stabilization whereas syn-parallel stacking arrangements had got much larger π-π stacking distances to belie any syn-parallel stacking stabilization. DFT studies had been pursued for quantifying the π-π stacking and T-stacking stabilization. The plotted curves for anti-parallel and T-stacked moieties had similarities to the 'Morse potential energy curve for diatomic molecule'. The minima of the curves corresponded to the most stable stacking distances and related energy values indicated stacking stabilization. Similar DFT studies on syn-parallel systems of 2b corresponded to no π-π stacking stabilization at all. Halogen-halogen interactions had also been observed to stabilize the compounds 2d, 2e and 3d. Nano-structural behaviour of the series of compounds 2a-e and 3a-e were thoroughly investigated.

Elimination of trench defects and V-pits from InGaN/GaN structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smalc-Koziorowska, Julita; Grzanka, Ewa; Czernecki, Robert

2015-03-09

The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor phase epitaxy was studied as a function of the growth temperature of the GaN quantum barriers (QBs). We observed the formation of basal stacking faults (BSFs) in GaN QBs grown at low temperature. The presence of BSFs terminated by stacking mismatch boundaries (SMBs) leads to the opening of the structure at the surface into a V-shaped trench loop. This trench may form above an SMB, thereby terminating the BSF, or above a junction between the SMB and a subsequent BSF. Fewer BSFs and thus fewer trench defectsmore » were observed in GaN QBs grown at temperatures higher than 830 °C. Further increase in the growth temperature of the GaN QBs led to the suppression of the threading dislocation opening into V-pits.« less

Landau quantization of Dirac fermions in graphene and its multilayers

NASA Astrophysics Data System (ADS)

Yin, Long-Jing; Bai, Ke-Ke; Wang, Wen-Xiao; Li, Si-Yu; Zhang, Yu; He, Lin

2017-08-01

When electrons are confined in a two-dimensional (2D) system, typical quantum-mechanical phenomena such as Landau quantization can be detected. Graphene systems, including the single atomic layer and few-layer stacked crystals, are ideal 2D materials for studying a variety of quantum-mechanical problems. In this article, we review the experimental progress in the unusual Landau quantized behaviors of Dirac fermions in monolayer and multilayer graphene by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Through STS measurement of the strong magnetic fields, distinct Landau-level spectra and rich level-splitting phenomena are observed in different graphene layers. These unique properties provide an effective method for identifying the number of layers, as well as the stacking orders, and investigating the fundamentally physical phenomena of graphene. Moreover, in the presence of a strain and charged defects, the Landau quantization of graphene can be significantly modified, leading to unusual spectroscopic and electronic properties.

Electronic, Mechanical, and Dielectric Properties of Two-Dimensional Atomic Layers of Noble Metals

NASA Astrophysics Data System (ADS)

Kapoor, Pooja; Kumar, Jagdish; Kumar, Arun; Kumar, Ashok; Ahluwalia, P. K.

2017-01-01

We present density functional theory-based electronic, mechanical, and dielectric properties of monolayers and bilayers of noble metals (Au, Ag, Cu, and Pt) taken with graphene-like hexagonal structure. The Au, Ag, and Pt bilayers stabilize in AA-stacked configuration, while the Cu bilayer favors the AB stacking pattern. The quantum ballistic conductance of the noble-metal mono- and bilayers is remarkably increased compared with their bulk counterparts. Among the studied systems, the tensile strength is found to be highest for the Pt monolayer and bilayer. The noble metals in mono- and bilayer form show distinctly different electron energy loss spectra and reflectance spectra due to the quantum confinement effect on going from bulk to the monolayer limit. Such tunability of the electronic and dielectric properties of noble metals by reducing the degrees of freedom of electrons offers promise for their use in nanoelectronics and optoelectronics applications.

The effect of reactive ion etch (RIE) process conditions on ReRAM device performance

NASA Astrophysics Data System (ADS)

Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.

2017-09-01

The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.

Analysis of the external and internal quantum efficiency of multi-emitter, white organic light emitting diodes

NASA Astrophysics Data System (ADS)

Furno, Mauro; Rosenow, Thomas C.; Gather, Malte C.; Lüssem, Björn; Leo, Karl

2012-10-01

We report on a theoretical framework for the efficiency analysis of complex, multi-emitter organic light emitting diodes (OLEDs). The calculation approach makes use of electromagnetic modeling to quantify the overall OLED photon outcoupling efficiency and a phenomenological description for electrical and excitonic processes. From the comparison of optical modeling results and measurements of the total external quantum efficiency, we obtain reliable estimates of internal quantum yield. As application of the model, we analyze high-efficiency stacked white OLEDs and comment on the various efficiency loss channels present in the devices.

Multi-wafer bonding technology for the integration of a micromachined Mirau interferometer

NASA Astrophysics Data System (ADS)

Wang, Wei-Shan; Lullin, Justine; Froemel, Joerg; Wiemer, Maik; Bargiel, Sylwester; Passilly, Nicolas; Gorecki, Christophe; Gessner, Thomas

2015-02-01

The paper presents the multi-wafer bonding technology as well as the integration of electrical connection to the zscanner wafer of the micromachined array-type Mirau interferometer. A Mirau interferometer, which is a key-component of optical coherence tomography (OCT) microsystem, consists of a microlens doublet, a MOEMS Z-scanner, a focusadjustment spacer and a beam splitter plate. For the integration of this MOEMS device heterogeneous bonding of Si, glass and SOI wafers is necessary. Previously, most of the existing methods for multilayer wafer bonding require annealing at high temperature, i.e., 1100°C. To be compatible with MEMS devices, bonding of different material stacks at temperatures lower than 400°C has also been investigated. However, if more components are involved, it becomes less effective due to the alignment accuracy or degradation of surface quality of the not-bonded side after each bonding operation. The proposed technology focuses on 3D integration of heterogeneous building blocks, where the assembly process is compatible with the materials of each wafer stack and with position accuracy which fits optical requirement. A demonstrator with up to 5 wafers bonded lower than 400°C is presented and bond interfaces are evaluated. To avoid the complexity of through wafer vias, a design which creates electrical connections along vertical direction by mounting a wafer stack on a flip chip PCB is proposed. The approach, which adopts vertically-stacked wafers along with electrical connection functionality, provides not only a space-effective integration of MOEMS device but also a design where the Mirau stack can be further integrated with other components of the OCT microsystem easily.

Microscopic vertical orientation of nano-interspaced graphene architectures in deposit films as electrodes for enhanced supercapacitor performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Gyoung Gug; Song, Bo; Li, Liyi

This paper reported a novel two-step process to fabricate high-performance supercapacitor films that contain microscale domains of nano-interspaced, re-stacked graphene sheets oriented perpendicular to the surface of current collector substrate, i.e., carbon fiber paper. In the two-step process, we first used ligand molecules to modify the surface of graphene oxide (GO) sheets and manipulate the interspacing between the re-stacked GO sheets. The ligand-modified GOs, i.e., m-GOs, were then reduced to obtain more conductive graphene (m-rGO), where X-ray diffraction measurement results indicated well-controlled interlayer spacing between the restacked m-rGO sheets up to 1 nm. The typical lateral dimension of the restackedmore » m-rGO sheets were ~40 µm. Then, electrical field was introduced during m-rGO slurry deposition process to induce the vertical orientation of the m-rGO sheets/stacks in the film deposit. The direct current electrical field induced the orientation of the domains of m-rGO stacks along the direction perpendicular to the surface of deposit film, i.e., direction of electric field. Also, the applied electric field increased the interlayer spacing further, which should enhance the diffusion and accessibility of electrolyte ions. As compared with the traditionally deposited “control” films, the field-processed film deposits that contain oriented structure of graphene sheets/stacks have shown up to ~1.6 times higher values in capacitance (430 F/g at 0.5 A/g) and ~67% reduction in equivalent series resistance. Finally, the approach of using electric field to tailor the microscopic architecture of graphene-based deposit films is effective to fabricate film electrodes for high performance supercapacitors.« less

Microscopic vertical orientation of nano-interspaced graphene architectures in deposit films as electrodes for enhanced supercapacitor performance

DOE PAGES

Jang, Gyoung Gug; Song, Bo; Li, Liyi; ...

2016-12-14

This paper reported a novel two-step process to fabricate high-performance supercapacitor films that contain microscale domains of nano-interspaced, re-stacked graphene sheets oriented perpendicular to the surface of current collector substrate, i.e., carbon fiber paper. In the two-step process, we first used ligand molecules to modify the surface of graphene oxide (GO) sheets and manipulate the interspacing between the re-stacked GO sheets. The ligand-modified GOs, i.e., m-GOs, were then reduced to obtain more conductive graphene (m-rGO), where X-ray diffraction measurement results indicated well-controlled interlayer spacing between the restacked m-rGO sheets up to 1 nm. The typical lateral dimension of the restackedmore » m-rGO sheets were ~40 µm. Then, electrical field was introduced during m-rGO slurry deposition process to induce the vertical orientation of the m-rGO sheets/stacks in the film deposit. The direct current electrical field induced the orientation of the domains of m-rGO stacks along the direction perpendicular to the surface of deposit film, i.e., direction of electric field. Also, the applied electric field increased the interlayer spacing further, which should enhance the diffusion and accessibility of electrolyte ions. As compared with the traditionally deposited “control” films, the field-processed film deposits that contain oriented structure of graphene sheets/stacks have shown up to ~1.6 times higher values in capacitance (430 F/g at 0.5 A/g) and ~67% reduction in equivalent series resistance. Finally, the approach of using electric field to tailor the microscopic architecture of graphene-based deposit films is effective to fabricate film electrodes for high performance supercapacitors.« less

Exciplexes and conical intersections lead to fluorescence quenching in π-stacked dimers of 2-aminopurine with natural purine nucleobases†

PubMed Central

Liang, JingXin; Nguyen, Quynh L.; Matsika, Spiridoula

2016-01-01

Fluorescent analogues of the natural DNA bases are useful in the study of nucleic acids’ structure and dynamics. 2-Aminopurine (2AP) is a widely used analogue with environmentally sensitive fluorescence behavior. The quantum yield of 2AP has been found to be significantly decreased when engaged in π-stacking interactions with the native bases. We present a theoretical study on fluorescence quenching mechanisms in dimers of 2AP π-stacked with adenine or guanine as in natural DNA. Relaxation pathways on the potential energy surfaces of the first excited states have been computed and reveal the importance of exciplexes and conical intersections in the fluorescence quenching process. PMID:23625036

Improvement of density resolution in short-pulse hard x-ray radiographic imaging using detector stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borm, B.; Gärtner, F.; Khaghani, D.

2016-09-15

We demonstrate that stacking several imaging plates (IPs) constitutes an easy method to increase hard x-ray detection efficiency. Used to record x-ray radiographic images produced by an intense-laser driven hard x-ray backlighter source, the IP stacks resulted in a significant improvement of the radiograph density resolution. We attribute this to the higher quantum efficiency of the combined detectors, leading to a reduced photon noise. Electron-photon transport simulations of the interaction processes in the detector reproduce the observed contrast improvement. Increasing the detection efficiency to enhance radiographic imaging capabilities is equally effective as increasing the x-ray source yield, e.g., by amore » larger drive laser energy.« less

Correlated insulator behaviour at half-filling in magic-angle graphene superlattices

NASA Astrophysics Data System (ADS)

Cao, Yuan; Fatemi, Valla; Demir, Ahmet; Fang, Shiang; Tomarken, Spencer L.; Luo, Jason Y.; Sanchez-Yamagishi, Javier D.; Watanabe, Kenji; Taniguchi, Takashi; Kaxiras, Efthimios; Ashoori, Ray C.; Jarillo-Herrero, Pablo

2018-04-01

A van der Waals heterostructure is a type of metamaterial that consists of vertically stacked two-dimensional building blocks held together by the van der Waals forces between the layers. This design means that the properties of van der Waals heterostructures can be engineered precisely, even more so than those of two-dimensional materials. One such property is the ‘twist’ angle between different layers in the heterostructure. This angle has a crucial role in the electronic properties of van der Waals heterostructures, but does not have a direct analogue in other types of heterostructure, such as semiconductors grown using molecular beam epitaxy. For small twist angles, the moiré pattern that is produced by the lattice misorientation between the two-dimensional layers creates long-range modulation of the stacking order. So far, studies of the effects of the twist angle in van der Waals heterostructures have concentrated mostly on heterostructures consisting of monolayer graphene on top of hexagonal boron nitride, which exhibit relatively weak interlayer interaction owing to the large bandgap in hexagonal boron nitride. Here we study a heterostructure consisting of bilayer graphene, in which the two graphene layers are twisted relative to each other by a certain angle. We show experimentally that, as predicted theoretically, when this angle is close to the ‘magic’ angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling. These flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons. We show that these correlated states at half-filling are consistent with Mott-like insulator states, which can arise from electrons being localized in the superlattice that is induced by the moiré pattern. These properties of magic-angle-twisted bilayer graphene heterostructures suggest that these materials could be used to study other exotic many-body quantum phases in two dimensions in the absence of a magnetic field. The accessibility of the flat bands through electrical tunability and the bandwidth tunability through the twist angle could pave the way towards more exotic correlated systems, such as unconventional superconductors and quantum spin liquids.

Thermal and Power Challenges in High Performance Computing Systems

NASA Astrophysics Data System (ADS)

Natarajan, Venkat; Deshpande, Anand; Solanki, Sudarshan; Chandrasekhar, Arun

2009-05-01

This paper provides an overview of the thermal and power challenges in emerging high performance computing platforms. The advent of new sophisticated applications in highly diverse areas such as health, education, finance, entertainment, etc. is driving the platform and device requirements for future systems. The key ingredients of future platforms are vertically integrated (3D) die-stacked devices which provide the required performance characteristics with the associated form factor advantages. Two of the major challenges to the design of through silicon via (TSV) based 3D stacked technologies are (i) effective thermal management and (ii) efficient power delivery mechanisms. Some of the key challenges that are articulated in this paper include hot-spot superposition and intensification in a 3D stack, design/optimization of thermal through silicon vias (TTSVs), non-uniform power loading of multi-die stacks, efficient on-chip power delivery, minimization of electrical hotspots etc.

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guzmán, Álvaro, E-mail: guzman@die.upm.es; Yamamoto, Kenji; Ulloa, J. M.

2015-07-06

InAs/GaAs{sub 1−x}Sb{sub x} Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices is improved with the increasing Sb mole fraction in the capping layer, up to 4.2 times for x = 17%. Since the QD layers are not vertically aligned, the vertical transport of the carriers photogenerated within the QDs takes place mainly through the bulk material and the wetting layer of the additional QD regions. The lower thickness of the wetting layer for high Sb contents results in a reduced capture probability of the photocarriers, thus increasing the photoconductive gain andmore » hence, the responsivity of the device. The growth of not vertically aligned consecutive QD layers with a thinner wetting layer opens a possibility to improve the performance of quantum dot infrared photodetectors.« less

24 CFR 3285.304 - Pier configuration.

Code of Federal Regulations, 2011 CFR

2011-04-01

... inches; (2) The concrete blocks must be stacked with their hollow cells aligned vertically; and (3) When... across capped-hollow block piers, as shown in Figures A and B to § 3285.306. (2) Caps must be solid...

Reactivity control assembly for nuclear reactor

DOEpatents

Bollinger, Lawrence R.

1984-01-01

Reactivity control assembly for nuclear reactor comprises supports stacked above reactor core for holding control rods. Couplers associated with the supports and a vertically movable drive shaft have lugs at their lower ends for engagement with the supports.

Wavelength dependent vertical integration of nanoplasmonic circuits utilizing coupled ring resonators

NASA Astrophysics Data System (ADS)

Nielsen, M.; Elezzabi, A. Y.

2013-03-01

To become a competitor to replace CMOS-electronics for next-generation data processing, signal routing, and computing, nanoplasmonic circuits will require an analogue to electrical vias in order to enable vertical connections between device layers. Vertically stacked nanoplasmonic nanoring resonators formed of Ag/Si/Ag gap plasmon waveguides were studied as a novel 3-D coupling scheme that could be monolithically integrated on a silicon platform. The vertically coupled ring resonators were evanescently coupled to 100 nm x 100 nm Ag/Si/Ag input and output waveguides and the whole device was submerged in silicon dioxide. 3-D finite difference time domain simulations were used to examine the transmission spectra of the coupling device with varying device sizes and orientations. By having the signal coupling occur over multiple trips around the resonator, coupling efficiencies as high as 39% at telecommunication wavelengths between adjacent layers were present with planar device areas of only 1.00 μm2. As the vertical signal transfer was based on coupled ring resonators, the signal transfer was inherently wavelength dependent. Changing the device size by varying the radii of the nanorings allowed for tailoring the coupled frequency spectra. The plasmonic resonator based coupling scheme was found to have quality (Q) factors of upwards of 30 at telecommunication wavelengths. By allowing different device layers to operate on different wavelengths, this coupling scheme could to lead to parallel processing in stacked independent device layers.

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

PubMed

Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

2014-01-21

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

Non-Weyl asymptotics for quantum graphs with general coupling conditions

NASA Astrophysics Data System (ADS)

Davies, E. Brian; Exner, Pavel; Lipovský, Jiří

2010-11-01

Inspired by a recent result of Davies and Pushnitski, we study resonance asymptotics of quantum graphs with general coupling conditions at the vertices. We derive a criterion for the asymptotics to be of a non-Weyl character. We show that for balanced vertices with permutation-invariant couplings the asymptotics is non-Weyl only in the case of Kirchhoff or anti-Kirchhoff conditions. While for graphs without permutation symmetry numerous examples of non-Weyl behaviour can be constructed. Furthermore, we present an insight into what makes the Kirchhoff/anti-Kirchhoff coupling particular from the resonance point of view. Finally, we demonstrate a generalization to quantum graphs with unequal edge weights.

Classical r matrix of the su(2 vertical bar 2) super Yang-Mills spin chain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torrielli, Alessandro

2007-05-15

In this note we straightforwardly derive and make use of the quantum R matrix for the su(2 vertical bar 2) super Yang-Mills spin chain in the manifest su(1 vertical bar 2)-invariant formulation, which solves the standard quantum Yang-Baxter equation, in order to obtain the correspondent (undressed) classical r matrix from the first order expansion in the 'deformation' parameter 2{pi}/{radical}({lambda}) and check that this last solves the standard classical Yang-Baxter equation. We analyze its bialgebra structure, its dependence on the spectral parameters, and its pole structure. We notice that it still preserves an su(1 vertical bar 2) subalgebra, thereby admitting anmore » expression in terms of a combination of projectors, which spans only a subspace of su(1 vertical bar 2)xsu(1 vertical bar 2). We study the residue at its simple pole at the origin and comment on the applicability of the classical Belavin-Drinfeld type of analysis.« less

Quantum speedup in solving the maximal-clique problem

NASA Astrophysics Data System (ADS)

Chang, Weng-Long; Yu, Qi; Li, Zhaokai; Chen, Jiahui; Peng, Xinhua; Feng, Mang

2018-03-01

The maximal-clique problem, to find the maximally sized clique in a given graph, is classically an NP-complete computational problem, which has potential applications ranging from electrical engineering, computational chemistry, and bioinformatics to social networks. Here we develop a quantum algorithm to solve the maximal-clique problem for any graph G with n vertices with quadratic speedup over its classical counterparts, where the time and spatial complexities are reduced to, respectively, O (√{2n}) and O (n2) . With respect to oracle-related quantum algorithms for the NP-complete problems, we identify our algorithm as optimal. To justify the feasibility of the proposed quantum algorithm, we successfully solve a typical clique problem for a graph G with two vertices and one edge by carrying out a nuclear magnetic resonance experiment involving four qubits.

Polarizable Force Field for DNA Based on the Classical Drude Oscillator: I. Refinement Using Quantum Mechanical Base Stacking and Conformational Energetics.

PubMed

Lemkul, Justin A; MacKerell, Alexander D

2017-05-09

Empirical force fields seek to relate the configuration of a set of atoms to its energy, thus yielding the forces governing its dynamics, using classical physics rather than more expensive quantum mechanical calculations that are computationally intractable for large systems. Most force fields used to simulate biomolecular systems use fixed atomic partial charges, neglecting the influence of electronic polarization, instead making use of a mean-field approximation that may not be transferable across environments. Recent hardware and software developments make polarizable simulations feasible, and to this end, polarizable force fields represent the next generation of molecular dynamics simulation technology. In this work, we describe the refinement of a polarizable force field for DNA based on the classical Drude oscillator model by targeting quantum mechanical interaction energies and conformational energy profiles of model compounds necessary to build a complete DNA force field. The parametrization strategy employed in the present work seeks to correct weak base stacking in A- and B-DNA and the unwinding of Z-DNA observed in the previous version of the force field, called Drude-2013. Refinement of base nonbonded terms and reparametrization of dihedral terms in the glycosidic linkage, deoxyribofuranose rings, and important backbone torsions resulted in improved agreement with quantum mechanical potential energy surfaces. Notably, we expand on previous efforts by explicitly including Z-DNA conformational energetics in the refinement.

High quantum efficiency and low dark count rate in multi-layer superconducting nanowire single-photon detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jafari Salim, A., E-mail: ajafaris@uwaterloo.ca; Eftekharian, A.; University of Waterloo, Waterloo, Ontario N2L 3G1

In this paper, we theoretically show that a multi-layer superconducting nanowire single-photon detector (SNSPD) is capable of approaching characteristics of an ideal SNSPD in terms of the quantum efficiency, dark count, and band-width. A multi-layer structure improves the performance in two ways. First, the potential barrier for thermally activated vortex crossing, which is the major source of dark counts and the reduction of the critical current in SNSPDs is elevated. In a multi-layer SNSPD, a vortex is made of 2D-pancake vortices that form a stack. It will be shown that the stack of pancake vortices effectively experiences a larger potentialmore » barrier compared to a vortex in a single-layer SNSPD. This leads to an increase in the experimental critical current as well as significant decrease in the dark count rate. In consequence, an increase in the quantum efficiency for photons of the same energy or an increase in the sensitivity to photons of lower energy is achieved. Second, a multi-layer structure improves the efficiency of single-photon absorption by increasing the effective optical thickness without compromising the single-photon sensitivity.« less

2000W high beam quality diode laser for direct materials processing

NASA Astrophysics Data System (ADS)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

Stratigraphy and Facies of Cretaceous Schrader Bluff and Prince Creek Formations in Colville River Bluffs, North Slope, Alaska

USGS Publications Warehouse

Flores, Romeo M.; Myers, Mark D.; Houseknecht, David W.; Stricker, Gary D.; Brizzolara, Donald W.; Ryherd, Timothy J.; Takahashi, Kenneth I.

2007-01-01

Stratigraphic and sedimentologic studies of facies of the Upper Cretaceous rocks along the Colville River Bluffs in the west-central North Slope of Alaska identified barrier shoreface deposits consisting of vertically stacked, coarsening-upward parasequences in the Schrader Bluff Formation. This vertical stack of parasequence deposits represents progradational sequences that were affected by shoaling and deepening cycles caused by fluctuations of sea level. Further, the vertical stack may have served to stabilize accumulation of voluminous coal deposits in the Prince Creek Formation, which formed braided, high-sinuosity meandering, anastomosed, and low-sinuosity meandering fluvial channels and related flood plain deposits. The erosional contact at the top of the uppermost coarsening-upward sequence, however, suggests a significant drop of base level (relative sea level) that permitted a semiregional subaerial unconformity to develop at the contact between the Schrader Bluff and Prince Creek Formations. This drop of relative sea level may have been followed by a relative sea-level rise to accommodate coal deposition directly above the unconformity. This rise was followed by a second drop of relative sea level, with formation of incised valley topography as much as 75 ft deep and an equivalent surface of a major marine erosion or mass wasting, or both, either of which can be traced from the Colville River Bluffs basinward to the subsurface in the west-central North Slope. The Prince Creek fluvial deposits represent late Campanian to late Maastrichtian depositional environments that were affected by these base level changes influenced by tectonism, basin subsidence, and sea-level fluctuations.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Effect of pore architecture and stacking direction on mechanical properties of solid freeform fabrication-based scaffold for bone tissue engineering.

PubMed

Lee, Jung-Seob; Cha, Hwang Do; Shim, Jin-Hyung; Jung, Jin Woo; Kim, Jong Young; Cho, Dong-Woo

2012-07-01

Fabrication of a three-dimensional (3D) scaffold with increased mechanical strength may be an essential requirement for more advanced bone tissue engineering scaffolds. Various material- and chemical-based approaches have been explored to enhance the mechanical properties of engineered bone tissue scaffolds. In this study, the effects of pore architecture and stacking direction on the mechanical and cell proliferation properties of a scaffold were investigated. The 3D scaffold was prepared using solid freeform fabrication technology with a multihead deposition system. Various types of scaffolds with different pore architectures (lattice, stagger, and triangle types) and stacking directions (horizontal and vertical directions) were fabricated with a blend of polycaprolactone and poly lactic-co-glycolic acid. In compression tests, the triangle-type scaffold was the strongest among the experimental groups. Stacking direction affected the mechanical properties of scaffolds. An in vitro cell counting kit-8 assay showed no significant differences in optical density depending on the different pore architectures and stacking directions. In conclusion, mechanical properties of scaffolds can be enhanced by controlling pore architecture and stacking direction. Copyright © 2012 Wiley Periodicals, Inc.

High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

PubMed Central

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

2012-01-01

Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

Method and apparatus for adding electrolyte to a fuel cell stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Congdon, J.V.; English, J.G.

1986-06-24

A process is described for adding electrolyte to a fuel cell stack, the stack comprising sheet-like elements defining a plurality of fuel cell units disposed one atop the other in abutting relationship, the units defining a substantially flat, vertically extending face, each unit including a cell comprising a pair of sheet-like spaced apart gas porous electrodes with a porous matrix layer sandwiched therebetween for retaining electrolyte during cell operation, each unit also including a sheet-like substantially non-porous separator, the separator being sandwiched between the cells of adjacent units. The improvement described here consists of: extending at least one of themore » sheet-like elements of each of a plurality of the fuel cell units outwardly from the stack face to define horizontal tabs disposed one above the other; depositing dilute electrolyte directly from electrolyte supply means upon substantially the full length, parallel to the stack face, of at least the uppermost tab, the tabs being constructed and arranged such that at least a portion of the deposited electrolyte cascades from tab to tab and down the face of the stack, the deposited electrolyte being absorbed by capillary action into the elements of the stack, the step of depositing continuing until all of the electrodes and matrix layers of the stack are fully saturated with the dilute electrolyte; and thereafter evaporating liquid from the saturated elements under controlled conditions of humidity and temperature until the stack has a desired electrolyte volume and electrolyte concentration therein.« less

Aqueous Exfoliation of Graphite into Graphene Assisted by Sulfonyl Graphene Quantum Dots for Photonic Crystal Applications.

PubMed

Zeng, Minxiang; Shah, Smit A; Huang, Dali; Parviz, Dorsa; Yu, Yi-Hsien; Wang, Xuezhen; Green, Micah J; Cheng, Zhengdong

2017-09-13

We investigate the π-π stacking of polyaromatic hydrocarbons (PAHs) with graphene surfaces, showing that such interactions are general across a wide range of PAH sizes and species, including graphene quantum dots. We synthesized a series of graphene quantum dots with sulfonyl, amino, and carboxylic functional groups and employed them to exfoliate and disperse pristine graphene in water. We observed that sulfonyl-functionalized graphene quantum dots were able to stabilize the highest concentration of graphene in comparison to other functional groups; this is consistent with prior findings by pyrene. The graphene nanosheets prepared showed excellent colloidal stability, indicating great potential for applications in electronics, solar cells, and photonic displays which was demonstrated in this work.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

The Coherent Interlayer Resistance of a Single, Misoriented Interface between Two Graphite Stacks

NASA Astrophysics Data System (ADS)

Lake, Roger K.; Habib, K. M. Masum; Sylvia, Somaia; Ge, Supeng; Neupane, Mahesh

2014-03-01

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles ranging from 0° to 27 .29° . The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m Ωμm2 depending on the Fermi energy. For small rotation angles <= 7 .34° , the coherent interlayer resistance exponentially approaches the ideal quantum resistance at energies away from the charge neutrality point. Over a range of intermediate angles, the resistance increases exponentially with primitive cell size for minimum size cells. A change of misorientation angle by one degree can increase the primitive cell size by three orders of magnitude. These large cell sizes may not follow the exponential trend of the minimal cells especially at energies a few hundred meV away from the charge neutrality point. At such energies, their coherent interlayer resistance is likely to coincide with that of a nearby rotation angle with a much smaller primitive cell. The energy dependence of the interlayer transmission is described and analyzed. This work was supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

Apparatus For Laminating Segmented Core For Electric Machine

DOEpatents

Lawrence, Robert Anthony; Stabel, Gerald R

2003-06-17

A segmented core for an electric machine includes segments stamped from coated electric steel. The segments each have a first end, a second end, and winding openings. A predetermined number of segments are placed end-to-end to form layers. The layers are stacked such that each of the layers is staggered from adjacent layers by a predetermined rotation angle. The winding openings of each of the layers are in vertical alignment with the winding openings of the adjacent layers. The stack of layers is secured to form the segmented core.

Optically Driven Spin Based Quantum Dots for Quantum Computing - Research Area 6 Physics 6.3.2

DTIC Science & Technology

2015-12-15

quantum dots (SAQD) in Schottky diodes . Based on spins in these dots, a scalable architecture has been proposed [Adv. in Physics, 59, 703 (2010)] by us...housed in two coupled quantum dots with tunneling between them, as described above, may not be scalable but can serve as a node in a quantum network. The... tunneling -coupled two-electron spin ground states in the vertically coupled quantum dots for “universal computation” two spin qubits within the universe of

Super-resolution with a positive epsilon multi-quantum-well super-lens

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bak, A. O.; Giannini, V.; Maier, S. A.

2013-12-23

We design an anisotropic and dichroic quantum metamaterial that is able to achieve super-resolution without the need for a negative permittivity. When exploring the parameters of the structure, we take into account the limits of semiconductor fabrication technology based on quantum well stacks. By heavily doping the structure with free electrons, we infer an anisotropic effective medium with a prolate ellipsoid dispersion curve which allows for near-diffractionless propagation of light (similar to an epsilon-near-zero hyperbolic lens). This, coupled with low absorption, allows us to resolve images at the sub-wavelength scale at distances 6 times greater than equivalent natural materials.

Fabrication of graphene/titanium carbide nanorod arrays for chemical sensor application.

PubMed

Fu, Chong; Li, Mingji; Li, Hongji; Li, Cuiping; Qu, Changqing; Yang, Baohe

2017-03-01

Vertically stacked graphene nanosheet/titanium carbide nanorod array/titanium (graphene/TiC nanorod array) wires were fabricated using a direct current arc plasma jet chemical vapor deposition (DC arc plasma jet CVD) method. The graphene/TiC nanorod arrays were characterized by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction spectroscopy. The TiO 2 nanotube array was reduced to the TiC nanorod array, and using those TiC nanorods as nucleation sites, the vertical graphene layer was formed on the TiC nanorod surface. The multi-target response mechanisms of the graphene/TiC nanorod array were investigated for ascorbic acid (AA), dopamine (DA), uric acid (UA), and hydrochlorothiazide (HCTZ). The vertically stacked graphene sheets facilitated the electron transfer and reactant transport with a unique porous surface, high surface area, and high electron transport network of CVD graphene sheets. The TiC nanorod array facilitated the electron transfer and firmly held the graphene layer. Thus, the graphene/TiC nanorod arrays could simultaneously respond to trace biomarkers and antihypertensive drugs. Copyright © 2016 Elsevier B.V. All rights reserved.

SWCNT-MoS2 -SWCNT Vertical Point Heterostructures.

PubMed

Zhang, Jin; Wei, Yang; Yao, Fengrui; Li, Dongqi; Ma, He; Lei, Peng; Fang, Hehai; Xiao, Xiaoyang; Lu, Zhixing; Yang, Juehan; Li, Jingbo; Jiao, Liying; Hu, Weida; Liu, Kaihui; Liu, Kai; Liu, Peng; Li, Qunqing; Lu, Wei; Fan, Shoushan; Jiang, Kaili

2017-02-01

A vertical point heterostructure (VPH) is constructed by sandwiching a two-dimensional (2D) MoS 2 flake with two cross-stacked metallic single-walled carbon nanotubes. It can be used as a field-effect transistor with high on/off ratio and a light detector with high spatial resolution. Moreover, the hybrid 1D-2D-1D VPHs open up new possibilities for nanoelectronics and nano-optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS 2 on Graphene for Enhanced Photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cui, Weili; Xu, Shanshan S.; Yan, Bo

Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS 2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficientlymore » hop to the 1T'-MoS 2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS 2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS 2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS 2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.« less

Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T'-MoS 2 on Graphene for Enhanced Photoresponse

DOE PAGES

Cui, Weili; Xu, Shanshan S.; Yan, Bo; ...

2017-05-11

Recently the applications of two-dimensional (2D) materials have been broadened by engineering their mechanical, electronic, and optical properties through either lateral or vertical hybridization. Along with this line, we report the successful design and fabrication of a novel triphasic 2D material by vertically stacking lateral 2H-/1T'-molybdenum disulfide (MoS 2) heterostructures on graphene with the assistance of supercritical carbon dioxide. This triphasic structure is experimentally shown to significantly enhance the photocurrent densities for hydrogen evolution reactions. First-principles theoretical analyses reveal that the improved photoresponse should be ascribed to the beneficial band alignments of the triphasic heterostructure. More specifically, electrons can efficientlymore » hop to the 1T'-MoS 2 phase via the highly conductive graphene layer as a result of their strong vertical interfacial electronic coupling. Subsequently, the electrons acquired on the 1T'-MoS 2 phase are exploited to fill the photoholes on the photo-excited 2H-MoS 2 phase through the lateral heterojunction structure, thereby suppressing the recombination process of the photo-induced charge carriers on the 2H-MoS 2 phase. This novel triphasic concept promises to open a new avenue to widen the molecular design of 2D hybrid materials for photonics-based energy conversion applications.« less

Floquet high Chern insulators in periodically driven chirally stacked multilayer graphene

NASA Astrophysics Data System (ADS)

Li, Si; Liu, Cheng-Cheng; Yao, Yugui

2018-03-01

Chirally stacked N-layer graphene is a semimetal with ±p N band-touching at two nonequivalent corners in its Brillioun zone. We predict that an off-resonant circularly polarized light (CPL) drives chirally stacked N-layer graphene into a Floquet Chern insulators (FCIs), aka quantum anomalous Hall insulators, with tunable high Chern number C F = ±N and large gaps. A topological phase transition between such a FCI and a valley Hall (VH) insulator with high valley Chern number C v = ±N induced by a voltage gate can be engineered by the parameters of the CPL and voltage gate. We propose a topological domain wall between the FCI and VH phases, along which perfectly valley-polarized N-channel edge states propagate unidirectionally without backscattering.

Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

PubMed

Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

2015-01-14

We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods.

PubMed

Demortière, Arnaud; Leonard, Donovan N; Petkov, Valeri; Chapman, Karena; Chattopadhyay, Soma; She, Chunxing; Cullen, David A; Shibata, Tomohiro; Pelton, Matthew; Shevchenko, Elena V

2018-04-19

Colloidal semiconductor nanocrystals are commonly grown with a shell of a second semiconductor material to obtain desired physical properties, such as increased photoluminescence quantum yield. However, the growth of a lattice-mismatched shell results in strain within the nanocrystal, and this strain has the potential to produce crystalline defects. Here, we study CdSe/CdS core/shell nanorods as a model system to investigate the influence of core size and shape on the formation of stacking faults in the nanocrystal. Using a combination of high-angle annular dark-field scanning transmission electron microscopy and pair-distribution-function analysis of synchrotron X-ray scattering, we show that growth of the CdS shell on smaller, spherical CdSe cores results in relatively small strain and few stacking faults. By contrast, growth of the shell on larger, prolate spheroidal cores leads to significant strain in the CdS lattice, resulting in a high density of stacking faults.

The effect of pi-stacking, h-bonding, and electrostatic interactions on the ionization energies of nucleic acid bases: adenine-adenine, thymine-thymine and adenine-thymine dimers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bravaya, Ksenia B.; Kostko, Oleg; Ahmed, Musahid

A combined theoretical and experimental study of the ionized dimers of thymine and adenine, TT, AA, and AT, is presented. Adiabatic and vertical ionization energies(IEs) for monomers and dimers as well as thresholds for the appearance of the protonated species are reported and analyzed. Non-covalent interactions stronglyaffect the observed IEs. The magnitude and the nature of the effect is different for different isomers of the dimers. The computations reveal that for TT, the largestchanges in vertical IEs (0.4 eV) occur in asymmetric h-bonded and symmetric pi- stacked isomers, whereas in the lowest-energy symmetric h-bonded dimer the shiftin IEs is muchmore » smaller (0.1 eV). The origin of the shift and the character of the ionized states is different in asymmetric h-bonded and symmetric stacked isomers. Inthe former, the initial hole is localized on one of the fragments, and the shift is due to the electrostatic stabilization of the positive charge of the ionized fragment by thedipole moment of the neutral fragment. In the latter, the hole is delocalized, and the change in IE is proportional to the overlap of the fragments' MOs. The shifts in AAare much smaller due to a less effcient overlap and a smaller dipole moment. The ionization of the h-bonded dimers results in barrierless (or nearly barrierless) protontransfer, whereas the pi-stacked dimers relax to structures with the hole stabilized by the delocalization or electrostatic interactions.« less

Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

NASA Astrophysics Data System (ADS)

Kaul, T.; Erbert, G.; Maaßdorf, A.; Knigge, S.; Crump, P.

2018-03-01

Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs featuring increased optical confinement in the quantum well, Γ, are shown to have improved temperature stability without compromising series resistance, internal efficiency or losses. Specifically, we present here vertical design considerations for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing Γ from 0.26% to 1.1%, and discuss the impact on power saturation mechanisms. The results indicate that key power saturation mechanisms at high temperatures originate in high threshold carrier densities, which arise in the quantum well at low Γ. The characteristic temperatures, T 0 and T 1, are determined under short pulse conditions and are used to clarify the thermal contribution to power limiting mechanisms. Although increased Γ reduces thermal power saturation, it is accompanied by increased optical absorption losses in the active region, which has a significant impact on the differential external quantum efficiency, {η }{{diff}}. To quantify the impact of internal optical losses contributed by the quantum well, a resonator length-dependent simulation of {η }{{diff}} is performed and compared to the experiment, which also allows the estimation of experimental values for the light absorption cross sections of electrons and holes inside the quantum well. Overall, the analysis enables vertical designs to be developed, for devices with maximized power conversion efficiency at high CW optical power and high temperatures, in a trade-off between absorption in the well and power saturation. The best balance to date is achieved in devices using EDAS designs with {{Γ }}=0.54 % , which deliver efficiencies of 50% at 14 W optical output power at an elevated junction temperature of 105 °C.

π -Stacking interactions in YFP, quantum mechanics and force field evaluations in the S0 and S1 states

NASA Astrophysics Data System (ADS)

Merabti, Karim Elhadj; Azizi, Sihem; Ridard, Jacqueline; Lévy, Bernard; Demachy, Isabelle

2017-08-01

We study the π -stacking interaction between the chromophore and Tyr203 in the Yellow Fluorescent Protein (YFP) in order to (i) evaluate the contribution of the internal interaction energy of the isolated Chromophore-Tyrosine complex (Eint) to the 26 nm red shift observed from GFP to YFP, (ii) compare the effects of Eint and of the proteic environment. To that end, we perform quantum mechanical and force field (ff) calculations of the isolated complex in S0 and S1 states on a large sample of geometries, together with molecular dynamics simulations and potential of mean force analysis. The calculated absorption wavelengths are found red shifted with respect to the isolated chromophore by 12-19 nm, that represents a large part of the GFP-YFP shift. We find that the effect of the protein is determinant on the dynamics of the complex while the error that results from using a classicalff is of limited effect.

Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

PubMed Central

Zhang, Tian; Lin, Jia-He; Yu, Yan-Mei; Chen, Xiang-Rong; Liu, Wu-Ming

2015-01-01

Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topological phase transition from normal to QSH state in bilayer phosphorene, accompanied by band-inversion that changes number from 0 to 1, which is highly dependent on interlayer stacking. When the bottom layer is shifted by 1/2 unit-cell along zigzag/armchair direction with respect to the top layer, the maximum topological bandgap 92.5 meV is sufficiently large to realize QSH effect even at room-temperature. An optical measurement of QSH effect is therefore suggested in view of the wide optical absorption spectrum extending to far infra-red, making bilayer phosphorene a promising candidate for opto-spintronic devices. PMID:26370771

Internal quantum efficiency mapping analysis for a >20%-efficiency n-type bifacial solar cell with front-side emitter formed by BBr3 thermal diffusion

NASA Astrophysics Data System (ADS)

Simayi, Shalamujiang; Mochizuki, Toshimitsu; Kida, Yasuhiro; Shirasawa, Katsuhiko; Takato, Hidetaka

2017-10-01

This paper presents a large-area (239-cm2) high-efficiency n-type bifacial solar cell that is processed using tube-furnace thermal diffusion employing liquid sources BBr3 for the front-side boron emitter and POCl3 for the rear-side phosphorus back surface field (BSF). The SiN x /Al2O3 stack was applied to the front-side boron emitter as a passivation layer. Both the front and rear-side electrodes are obtained using screen-printed contacts with H-patterns. The resulting highest-efficiency solar cell has front- and rear-side efficiencies of 20.3 and 18.7%, respectively, while the corresponding bifaciality is up to 92%. Finally, the passivation quality of the SiN x /Al2O3 stack on the front-side boron emitter and rear-side phosphorus BSF is investigated and visualized by measuring the internal quantum efficiency mapping of the bifacial solar cell.

Advanced carbon nanotubes functionalization

NASA Astrophysics Data System (ADS)

Setaro, A.

2017-10-01

Similar to graphene, carbon nanotubes are materials made of pure carbon in its sp2 form. Their extended conjugated π-network provides them with remarkable quantum optoelectronic properties. Frustratingly, it also brings drawbacks. The π-π stacking interaction makes as-produced tubes bundle together, blurring all their quantum properties. Functionalization aims at modifying and protecting the tubes while hindering π-π stacking. Several functionalization strategies have been developed to circumvent this limitation in order for nanotubes applications to thrive. In this review, we summarize the different approaches established so far, emphasizing the balance between functionalization efficacy and the preservation of the tubes’ properties. Much attention will be given to a functionalization strategy overcoming the covalent-noncovalent dichotomy and to the implementation of two advanced functionalization schemes: (a) conjugation with molecular switches, to yield hybrid nanosystems with chemo-physical properties that can be tuned in a controlled and reversible way, and; (b) plasmonic nanosystems, whose ability to concentrate and enhance the electromagnetic fields can be taken advantage of to enhance the optical response of the tubes.

Stationary states in quantum walk search

NASA Astrophysics Data System (ADS)

PrÅ«sis, Krišjānis; Vihrovs, Jevgěnijs; Wong, Thomas G.

2016-09-01

When classically searching a database, having additional correct answers makes the search easier. For a discrete-time quantum walk searching a graph for a marked vertex, however, additional marked vertices can make the search harder by causing the system to approximately begin in a stationary state, so the system fails to evolve. In this paper, we completely characterize the stationary states, or 1-eigenvectors, of the quantum walk search operator for general graphs and configurations of marked vertices by decomposing their amplitudes into uniform and flip states. This infinitely expands the number of known stationary states and gives an optimization procedure to find the stationary state closest to the initial uniform state of the walk. We further prove theorems on the existence of stationary states, with them conditionally existing if the marked vertices form a bipartite connected component and always existing if nonbipartite. These results utilize the standard oracle in Grover's algorithm, but we show that a different type of oracle prevents stationary states from interfering with the search algorithm.

Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode.

PubMed

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Zhang, Haiting; Song, Xiaoxian; Cao, Mingxuan; Yu, Yu; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2017-09-20

A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high-precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene-PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 × 10 4 A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPDs reveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.

Quantum teleportation of an arbitrary two-qubit state and its relation to multipartite entanglement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rigolin, Gustavo

2005-03-01

We explicitly show a protocol in which an arbitrary two qubit state vertical bar {phi}>=a vertical bar 00>+b vertical bar 01>+c vertical bar 10>+d vertical bar 11> is faithfully and deterministically teleported from Alice to Bob. We construct the 16 orthogonal generalized Bell states that can be used to teleport the two qubits. The local operations Bob must perform on his qubits in order to recover the teleported state are also constructed. They are restricted only to single-qubit gates. This means that a controlled-NOT gate is not necessary to complete the protocol. A generalization where N qubits are teleported ismore » also shown. We define a generalized magic basis, which possesses interesting properties. These properties help us to suggest a generalized concurrence from which we construct a measure of entanglement that has a clear physical interpretation: A multipartite state has maximum entanglement if it is a genuine quantum teleportation channel.« less

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

NASA Astrophysics Data System (ADS)

Shoji, Yasushi; Tamaki, Ryo; Okada, Yoshitaka

2017-06-01

We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment. For both SCs, the external quantum efficiency (EQE) increased in the longer wavelength region beyond GaAs bandedge wavelength of λ > 870 nm due to an additive contribution from GaSb/GaAs QD or QR layers inserted in the intrinsic region of p-i-n SC structure. The EQE of GaSb/GaAs QRSC was higher than that of QDSC at room temperature and the photoluminescence intensity from GaSb/GaAs QRs was stronger compared with GaSb/GaAs QDs. These results indicate that crystal quality of GaSb/GaAs QRs is superior to that of GaSb/GaAs QDs. Furthermore, a photocurrent production due to two-step photo-absorption via GaSb/GaAs QD states or QR states, ΔEQE was measured at low temperature and the ratio of two-step absorption to total carrier extraction defined as ΔEQE / (ΔEQE + EQE), was higher for GaSb/GaAs QRSC than that of QDSC. The ratio of GaSb/GaAs QRSC exceeds 80% over the wavelength region of λ = 950 - 1250 nm. This suggests that two-step absorption process is more dominant for carrier extraction from GaSb/GaAs QR structure.

Heterogeneous quantum computing for satellite constellation optimization: solving the weighted k-clique problem

NASA Astrophysics Data System (ADS)

Bass, Gideon; Tomlin, Casey; Kumar, Vaibhaw; Rihaczek, Pete; Dulny, Joseph, III

2018-04-01

NP-hard optimization problems scale very rapidly with problem size, becoming unsolvable with brute force methods, even with supercomputing resources. Typically, such problems have been approximated with heuristics. However, these methods still take a long time and are not guaranteed to find an optimal solution. Quantum computing offers the possibility of producing significant speed-up and improved solution quality. Current quantum annealing (QA) devices are designed to solve difficult optimization problems, but they are limited by hardware size and qubit connectivity restrictions. We present a novel heterogeneous computing stack that combines QA and classical machine learning, allowing the use of QA on problems larger than the hardware limits of the quantum device. These results represent experiments on a real-world problem represented by the weighted k-clique problem. Through this experiment, we provide insight into the state of quantum machine learning.

Enumeration of Extended m-Regular Linear Stacks.

PubMed

Guo, Qiang-Hui; Sun, Lisa H; Wang, Jian

2016-12-01

The contact map of a protein fold in the two-dimensional (2D) square lattice has arc length at least 3, and each internal vertex has degree at most 2, whereas the two terminal vertices have degree at most 3. Recently, Chen, Guo, Sun, and Wang studied the enumeration of [Formula: see text]-regular linear stacks, where each arc has length at least [Formula: see text] and the degree of each vertex is bounded by 2. Since the two terminal points in a protein fold in the 2D square lattice may form contacts with at most three adjacent lattice points, we are led to the study of extended [Formula: see text]-regular linear stacks, in which the degree of each terminal point is bounded by 3. This model is closed to real protein contact maps. Denote the generating functions of the [Formula: see text]-regular linear stacks and the extended [Formula: see text]-regular linear stacks by [Formula: see text] and [Formula: see text], respectively. We show that [Formula: see text] can be written as a rational function of [Formula: see text]. For a certain [Formula: see text], by eliminating [Formula: see text], we obtain an equation satisfied by [Formula: see text] and derive the asymptotic formula of the numbers of [Formula: see text]-regular linear stacks of length [Formula: see text].

Localization on Quantum Graphs with Random Vertex Couplings

NASA Astrophysics Data System (ADS)

Klopp, Frédéric; Pankrashkin, Konstantin

2008-05-01

We consider Schrödinger operators on a class of periodic quantum graphs with randomly distributed Kirchhoff coupling constants at all vertices. We obtain necessary conditions for localization on quantum graphs in terms of finite volume criteria for some energy-dependent discrete Hamiltonians. These conditions hold in the strong disorder limit and at the spectral edges.

Fluorine Scan of Inhibitors of the Cysteine Protease Human Cathepsin L: Dipolar and Quadrupolar Effects in the π-Stacking of Fluorinated Phenyl Rings on Peptide Amide Bonds.

PubMed

Giroud, Maude; Harder, Michael; Kuhn, Bernd; Haap, Wolfgang; Trapp, Nils; Schweizer, W Bernd; Schirmeister, Tanja; Diederich, François

2016-05-19

The π-stacking of fluorinated benzene rings on protein backbone amide groups was investigated, using a dual approach comprising enzyme-ligand binding studies complemented by high-level quantum chemical calculations. In the experimental study, the phenyl substituent of triazine nitrile inhibitors of human cathepsin L (hCatL), which stacks onto the peptide amide bond Gly67-Gly68 at the entrance of the S3 pocket, was systematically fluorinated, and differences in inhibitory potency were measured in a fluorimetric assay. Binding affinity is influenced by lipophilicity (clog P), the dipole and quadrupole moments of the fluorinated rings, but also by additional interactions of the introduced fluorine atoms with the local environment of the pocket. Generally, the higher the degree of fluorination, the better the binding affinities. Gas phase calculations strongly support the contributions of the molecular quadrupole moments of the fluorinated phenyl rings to the π-stacking interaction with the peptide bond. These findings provide useful guidelines for enhancing π-stacking on protein amide fragments. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure

NASA Astrophysics Data System (ADS)

Du, Jinjuan; Xu, Shengrui; Li, Peixian; Zhang, Jincheng; Zhao, Ying; Peng, Ruoshi; Fan, Xiaomeng; Hao, Yue

2018-04-01

GaN based ultraviolet multiple quantum well structures grown on a c-plane sapphire substrate by metal organic chemical deposition showed a microstructure with a large amount of huge hexagonal hillocks. The polarity of the sample is confirmed by etching with sodium hydroxide solution. The luminous intensity distribution of a typical hexagonal hillock was investigated by the phototluminescent mapping and the luminous intensity at hillock top regions was found to be 15 times higher than that of the regions around hillocks. The reduction of dislocations, the decreasing of the quantum confirmed stack effect caused by semipolar plane and the inclination of the sidewalls of the hexagonal hillock were responsible for the enhancement of luminous intensity.

Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zh.M.; Seydmohamadi, Sh.; Lee, J.H.

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

29 CFR 1917.118 - Fixed ladders.

Code of Federal Regulations, 2011 CFR

2011-07-01

... bolts or structural members of tanks and towers; (3) Ladders built into or vertically attached to..., microwave communications, electrical power and similar towers, poles and structures, including stacks and... consisting of individual rungs that are attached to walls, conical manhole sections or river cells shall: (1...

29 CFR 1917.118 - Fixed ladders.

Code of Federal Regulations, 2010 CFR

2010-07-01

... bolts or structural members of tanks and towers; (3) Ladders built into or vertically attached to..., microwave communications, electrical power and similar towers, poles and structures, including stacks and... consisting of individual rungs that are attached to walls, conical manhole sections or river cells shall: (1...

33 CFR 126.15 - What conditions must a designated waterfront facility meet?

Code of Federal Regulations, 2011 CFR

2011-07-01

... NFPA 307, chapter 5. (2) Containers. Containers packed with dangerous cargo that are vertically stacked... HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES HANDLING OF DANGEROUS CARGO AT WATERFRONT FACILITIES... facility transfers dangerous cargo between sunset and sunrise, it must have outdoor lighting that...

33 CFR 126.15 - What conditions must a designated waterfront facility meet?

Code of Federal Regulations, 2010 CFR

2010-07-01

... NFPA 307, chapter 5. (2) Containers. Containers packed with dangerous cargo that are vertically stacked... HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES HANDLING OF DANGEROUS CARGO AT WATERFRONT FACILITIES... facility transfers dangerous cargo between sunset and sunrise, it must have outdoor lighting that...

33 CFR 126.15 - What conditions must a designated waterfront facility meet?

Code of Federal Regulations, 2012 CFR

2012-07-01

... NFPA 307, chapter 5. (2) Containers. Containers packed with dangerous cargo that are vertically stacked... HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES HANDLING OF DANGEROUS CARGO AT WATERFRONT FACILITIES... facility transfers dangerous cargo between sunset and sunrise, it must have outdoor lighting that...

33 CFR 126.15 - What conditions must a designated waterfront facility meet?

Code of Federal Regulations, 2014 CFR

2014-07-01

... NFPA 307, chapter 5. (2) Containers. Containers packed with dangerous cargo that are vertically stacked... HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES HANDLING OF DANGEROUS CARGO AT WATERFRONT FACILITIES... facility transfers dangerous cargo between sunset and sunrise, it must have outdoor lighting that...

33 CFR 126.15 - What conditions must a designated waterfront facility meet?

Code of Federal Regulations, 2013 CFR

2013-07-01

... NFPA 307, chapter 5. (2) Containers. Containers packed with dangerous cargo that are vertically stacked... HOMELAND SECURITY (CONTINUED) WATERFRONT FACILITIES HANDLING OF DANGEROUS CARGO AT WATERFRONT FACILITIES... facility transfers dangerous cargo between sunset and sunrise, it must have outdoor lighting that...

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

PubMed

Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian

2016-10-12

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe 2 and n-type multilayer WS 2 : (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe 2 /WS 2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Electrical characterization of vertically stacked p-FET SOI nanowires

NASA Astrophysics Data System (ADS)

Cardoso Paz, Bruna; Cassé, Mikaël; Barraud, Sylvain; Reimbold, Gilles; Vinet, Maud; Faynot, Olivier; Antonio Pavanello, Marcelo

2018-03-01

This work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional procedure to extract the effective oxide thickness (EOT) and Shift and Ratio Method (S&R) have been adapted and validated through tridimensional numerical simulations. Electrical characterization is performed for NWs with [1 1 0]- and [1 0 0]-oriented channels, as a function of both fin width (WFIN) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15 nm gate length, for both orientations. Effective mobility is found around two times higher for [1 1 0]- in comparison to [1 0 0]-oriented NWs due to higher holes mobility contribution in (1 1 0) plan. Improvements obtained on ION/IOFF by reducing WFIN are mainly due to subthreshold slope decrease, once small and none mobility increase is obtained for [1 1 0]- and [1 0 0]-oriented NWs, respectively.

Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping.

PubMed

Wi, Sungjin; Kim, Hyunsoo; Chen, Mikai; Nam, Hongsuk; Guo, L Jay; Meyhofer, Edgar; Liang, Xiaogan

2014-05-27

Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

UV light induced insulator-metal transition in ultra-thin ZnO/TiOx stacked layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Saha, D.; Misra, P.; Joshi, M. P.; Kukreja, L. M.

2016-08-01

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1-7) of ZnO/TiOx layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O2 and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ˜ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.

Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures

NASA Astrophysics Data System (ADS)

Taddei, S.; Colocci, M.; Vinattieri, A.; Bogani, F.; Franchi, S.; Frigeri, P.; Lazzarini, L.; Salviati, G.

2000-10-01

Vertically ordered quantum dots in multilayer InAs/GaAs structures have attracted large interest in recent years for device application as light emitters. Contradictory claims on the dependence of the fundamental transition energy on the interlayer separation and number of dot layers have been reported in the literature. We show that either a blueshift or a redshift of the fundamental transition energy can be observed in different coupling conditions and straightforwardly explained by including strain, indium segregation, and electron-hole Coulomb interaction, in good agreement with experimental results.

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

NASA Astrophysics Data System (ADS)

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A.; Park, Jiwoong

2017-10-01

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides--which represent one- and three-atom-thick two-dimensional building blocks, respectively--have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.

PubMed

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A; Park, Jiwoong

2017-10-12

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Vertical pillar nanoantenna for emission enhancement and redirection

NASA Astrophysics Data System (ADS)

Paparone, J.; Laverdant, J.; Brucoli, G.; Symonds, C.; Crut, A.; Del Fatti, N.; Benoit, J. M.; Bellessa, J.

2018-01-01

Designing efficient metallic nanostructures can help in realizing bright single photon emission in the visible and near-infrared ranges. We propose a novel nanostructure design that combines the benefits of plasmonic hot spot generation in the near-field and the concept of antennas developed in the radio-frequency range. The antenna is formed by a vertical stack of metallic and dielectric nanocylinders. When used for controlling the far-field emission of a localized source, its key features are moderate losses in the metal, relatively large Purcell factors, as well as a low sensibility to the lateral position of the emitter. A redirection process necessary for these vertical structures is proposed, based on the versatility of the vertical geometry, and allows an efficient redirection of the emitted light even for antennas on dielectric substrates.

Growing Food for Space and Earth: NASA's Contributions to Vertical Agriculture

NASA Technical Reports Server (NTRS)

Wheeler, Raymond M.

2015-01-01

Beginning in the 1980s with NASA's Controlled Ecological Life Support System (CELSS) Program and later the 1990s and early 2000s with the Advanced Life Support Project, NASA conducted extensive testing with crops in controlled environment conditions. One series of tests conducted at Kennedy Space Center used a large chamber with vertically stacked shelves to support hydroponic growing trays, with a bank of electric lamps above each shelf. This is essentially the same approach that has become popular for use in so-called vertical agriculture systems, which attempts to optimize plant production in a fixed volume. Some of the findings and commonalities of NASA's work during this period and how it overlaps with current interests in vertical agriculture will be presented in the talk.

Quantum-mechanical analysis of the energetic contributions to π stacking in nucleic acids versus rise, twist, and slide.

PubMed

Parker, Trent M; Hohenstein, Edward G; Parrish, Robert M; Hud, Nicholas V; Sherrill, C David

2013-01-30

Symmetry-adapted perturbation theory (SAPT) is applied to pairs of hydrogen-bonded nucleobases to obtain the energetic components of base stacking (electrostatic, exchange-repulsion, induction/polarization, and London dispersion interactions) and how they vary as a function of the helical parameters Rise, Twist, and Slide. Computed average values of Rise and Twist agree well with experimental data for B-form DNA from the Nucleic Acids Database, even though the model computations omitted the backbone atoms (suggesting that the backbone in B-form DNA is compatible with having the bases adopt their ideal stacking geometries). London dispersion forces are the most important attractive component in base stacking, followed by electrostatic interactions. At values of Rise typical of those in DNA (3.36 Å), the electrostatic contribution is nearly always attractive, providing further evidence for the importance of charge-penetration effects in π-π interactions (a term neglected in classical force fields). Comparison of the computed stacking energies with those from model complexes made of the "parent" nucleobases purine and 2-pyrimidone indicates that chemical substituents in DNA and RNA account for 20-40% of the base-stacking energy. A lack of correspondence between the SAPT results and experiment for Slide in RNA base-pair steps suggests that the backbone plays a larger role in determining stacking geometries in RNA than in B-form DNA. In comparisons of base-pair steps with thymine versus uracil, the thymine methyl group tends to enhance the strength of the stacking interaction through a combination of dispersion and electrosatic interactions.

Fractional Quantum Hall Effect in Infinite-Layer Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naud, J. D.; Pryadko, Leonid P.; Sondhi, S. L.

2000-12-18

Stacked two dimensional electron systems in transverse magnetic fields exhibit three dimensional fractional quantum Hall phases. We analyze the simplest such phases and find novel bulk properties, e.g., irrational braiding. These phases host ''one and a half'' dimensional surface phases in which motion in one direction is chiral. We offer a general analysis of conduction in the latter by combining sum rule and renormalization group arguments, and find that when interlayer tunneling is marginal or irrelevant they are chiral semimetals that conduct only at T>0 or with disorder.

THz quantum cascade lasers with wafer bonded active regions.

PubMed

Brandstetter, M; Deutsch, C; Benz, A; Cole, G D; Detz, H; Andrews, A M; Schrenk, W; Strasser, G; Unterrainer, K

2012-10-08

We demonstrate terahertz quantum-cascade lasers with a 30 μm thick double-metal waveguide, which are fabricated by stacking two 15 μm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the output power is increased by significantly more than a factor of 2 without reducing the maximum operating temperature and without increasing the threshold current.

Membrane Reflector Vertical Cavity Lasers at Near- and Midwave-Infrared

DTIC Science & Technology

2014-05-30

independent broadband reflectors based on cross-stacked gratings, Optics Express, (04 2011): 9050. doi: 10.1364/OE.19.009050 Tapas Kumar Saha, Mingyu Lu... Mingyu Lu, Huiqing Zhai, Deyin Zhao, Weidong Zhou. Design of a compact grating coupler with controllable linewidths via transverse resonance and

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

PubMed

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene

NASA Astrophysics Data System (ADS)

Datta, Biswajit; Dey, Santanu; Samanta, Abhisek; Agarwal, Hitesh; Borah, Abhinandan; Watanabe, Kenji; Taniguchi, Takashi; Sensarma, Rajdeep; Deshmukh, Mandar M.

2017-02-01

Quantum Hall effect provides a simple way to study the competition between single particle physics and electronic interaction. However, electronic interaction becomes important only in very clean graphene samples and so far the trilayer graphene experiments are understood within non-interacting electron picture. Here, we report evidence of strong electronic interactions and quantum Hall ferromagnetism seen in Bernal-stacked trilayer graphene. Due to high mobility ~500,000 cm2 V-1 s-1 in our device compared to previous studies, we find all symmetry broken states and that Landau-level gaps are enhanced by interactions; an aspect explained by our self-consistent Hartree-Fock calculations. Moreover, we observe hysteresis as a function of filling factor and spikes in the longitudinal resistance which, together, signal the formation of quantum Hall ferromagnetic states at low magnetic field.

Wide-angle Marine Seismic Refraction Imaging of Vertical Faults: Pre-Stack Turning Wave Migrations of Synthetic Data and Implications for Survey Design

NASA Astrophysics Data System (ADS)

Miller, N. C.; Lizarralde, D.; McGuire, J.; Hole, J. A.

2006-12-01

We consider methodologies, including survey design and processing algorithms, which are best suited to imaging vertical reflectors in oceanic crust using marine seismic techniques. The ability to image the reflectivity structure of transform faults as a function of depth, for example, may provide new insights into what controls seismicity along these plate boundaries. Turning-wave migration has been used with success to image vertical faults on land. With synthetic datasets we find that this approach has unique difficulties in the deep ocean. The fault-reflected crustal refraction phase (Pg-r) typically used in pre-stack migrations is difficult to isolate in marine seismic data. An "imagable" Pg-r is only observed in a time window between the first arrivals and arrivals from the sediments and the thick, slow water layer at offsets beyond ~25 km. Ocean- bottom seismometers (OBSs), as opposed to a long surface streamer, must be used to acquire data suitable for crustal-scale vertical imaging. The critical distance for Moho reflections (PmP) in oceanic crust is also ~25 km, thus Pg-r and PmP-r are observed with very little separation, and the fault-reflected mantle refraction (Pn-r) arrives prior to Pg-r as the observation window opens with increased OBS-to-fault distance. This situation presents difficulties for "first-arrival" based Kirchoff migration approaches and suggests that wave- equation approaches, which in theory can image all three phases simultaneously, may be more suitable for vertical imaging in oceanic crust. We will present a comparison of these approaches as applied to a synthetic dataset generated from realistic, stochastic velocity models. We will assess their suitability, the migration artifacts unique to the deep ocean, and the ideal instrument layout for such an experiment.

A Vertically Flow-Following, Icosahedral Grid Model for Medium-Range and Seasonal Prediction. Part 1: Model Description

NASA Technical Reports Server (NTRS)

Bleck, Rainer; Bao, Jian-Wen; Benjamin, Stanley G.; Brown, John M.; Fiorino, Michael; Henderson, Thomas B.; Lee, Jin-Luen; MacDonald, Alexander E.; Madden, Paul; Middlecoff, Jacques;

Quantum Effects on the Capacitance of Graphene-Based Electrodes

DOE PAGES

Zhan, Cheng; Neal, Justin; Wu, Jianzhong; ...

2015-09-08

We recently measured quantum capacitance for electric double layers (EDL) at electrolyte/graphene interfaces. However, the importance of quantum capacitance in realistic carbon electrodes is not clear. Toward understanding that from a theoretical perspective, here we studied the quantum capacitance and total capacitance of graphene electrodes as a function of the number of graphene layers. The quantum capacitance was obtained from electronic density functional theory based on fixed band approximation with an implicit solvation model, while the EDL capacitances were from classical density functional theory. We found that quantum capacitance plays a dominant role in total capacitance of the single-layer graphenemore » both in aqueous and ionic-liquid electrolytes but the contribution decreases as the number of graphene layers increases. Moreover, the total integral capacitance roughly levels off and is dominated by the EDL capacitance beyond about four graphene layers. Finally, because many porous carbons have nanopores with stacked graphene layers at the surface, this research provides a good estimate of the effect of quantum capacitance on their electrochemical performance.« less

Phonon Transport at the Interfaces of Vertically Stacked Graphene and Hexagonal Boron Nitride Heterostructures

DOE PAGES

Yan, Zhequan; Chen, Liang; Yoon, Mina; ...

2016-01-12

Hexagonal boron nitride (h-BN) is a substrate for graphene based nano-electronic devices. We investigate the ballistic phonon transport at the interface of vertically stacked graphene and h-BN heterostructures using first principles density functional theory and atomistic Green's function simulations considering the influence of lattice stacking. We compute the frequency and wave-vector dependent transmission function and observe distinct stacking-dependent phonon transmission features for the h-BN/graphene/h-BN sandwiched systems. We find that the in-plane acoustic modes have the dominant contributions to the phonon transmission and thermal boundary conductance (TBC) for the interfaces with the carbon atom located directly on top of the boronmore » atom (C–B matched) because of low interfacial spacing. The low interfacial spacing is a consequence of the differences in the effective atomic volume of N and B and the difference in the local electron density around N and B. For the structures with the carbon atom directly on top of the nitrogen atom (C–N matched), the spatial distance increases and the contribution of in-plane modes to the TBC decreases leading to higher contributions by out-of-plane acoustic modes. We find that the C–B matched interfaces have stronger phonon–phonon coupling than the C–N matched interfaces, which results in significantly higher TBC (more than 50%) in the C–B matched interface. The findings in this study will provide insights to understand the mechanism of phonon transport at h-BN/graphene/h-BN interfaces, to better explain the experimental observations and to engineer these interfaces to enhance heat dissipation in graphene based electronic devices.« less

Magnetic susceptibility of alkali-tetracyanoquinodimethane salts and extended Hubbard models with bond order and charge density wave phases

NASA Astrophysics Data System (ADS)

Kumar, Manoranjan; Topham, Benjamin J.; Yu, RuiHui; Ha, Quoc Binh Dang; Soos, Zoltán G.

2011-06-01

The molar spin susceptibilities χ(T) of Na-tetracyanoquinodimethane (TCNQ), K-TCNQ, and Rb-TCNQ(II) are fit quantitatively to 450 K in terms of half-filled bands of three one-dimensional Hubbard models with extended interactions using exact results for finite systems. All three models have bond order wave (BOW) and charge density wave (CDW) phases with boundary V = Vc(U) for nearest-neighbor interaction V and on-site repulsion U. At high T, all three salts have regular stacks of TCNQ^- anion radicals. The χ(T) fits place Na and K in the CDW phase and Rb(II) in the BOW phase with V ≈ Vc. The Na and K salts have dimerized stacks at T < Td while Rb(II) has regular stacks at 100 K. The χ(T) analysis extends to dimerized stacks and to dimerization fluctuations in Rb(II). The three models yield consistent values of U, V, and transfer integrals t for closely related TCNQ^- stacks. Model parameters based on χ(T) are smaller than those from optical data that in turn are considerably reduced by electronic polarization from quantum chemical calculation of U, V, and t of adjacent TCNQ^- ions. The χ(T) analysis shows that fully relaxed states have reduced model parameters compared to optical or vibration spectra of dimerized or regular TCNQ^- stacks.

Rich magneto-absorption spectra of AAB-stacked trilayer graphene.

PubMed

Do, Thi-Nga; Shih, Po-Hsin; Chang, Cheng-Peng; Lin, Chiun-Yan; Lin, Ming-Fa

2016-06-29

A generalized tight-binding model is developed to investigate the feature-rich magneto-optical properties of AAB-stacked trilayer graphene. Three intragroup and six intergroup inter-Landau-level (inter-LL) optical excitations largely enrich magneto-absorption peaks. In general, the former are much higher than the latter, depending on the phases and amplitudes of LL wavefunctions. The absorption spectra exhibit single- or twin-peak structures which are determined by quantum modes, LL energy spectra and Fermion distribution. The splitting LLs, with different localization centers (2/6 and 4/6 positions in a unit cell), can generate very distinct absorption spectra. There exist extra single peaks because of LL anti-crossings. AAB, AAA, ABA, and ABC stackings considerably differ from one another in terms of the inter-LL category, frequency, intensity, and structure of absorption peaks. The main characteristics of LL wavefunctions and energy spectra and the Fermi-Dirac function are responsible for the configuration-enriched magneto-optical spectra.

24 CFR 3285.304 - Pier configuration.

Code of Federal Regulations, 2010 CFR

2010-04-01

... configuration. (a) Concrete blocks. Installation instructions for concrete block piers must be developed in...-bearing (not decorative) concrete blocks must have nominal dimensions of at least 8 inches × 8 inches × 16 inches; (2) The concrete blocks must be stacked with their hollow cells aligned vertically; and (3) When...

Large-Diameter InGaAs/AlGaAs Vertical-Cavity Surface-Emitting Lasers with Low Threshold Current Density Fabricated Using a Simple Chemical Etch Process

DTIC Science & Technology

1994-03-01

Epitaxial structure of vertical cavity surface - emitting laser ( VCSEL ...diameter (75 tum < d< 150 prm) vertical - cavity surface - emitting lasers fabricated from an epitaxial structure containing a single In0 .2Ga 8.,As quantum...development of vertical - cavity surface - emitting lasers ( VCSELs ) [1] has enabled III-V semiconductor technology to be applied to cer- tain optical

Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

NASA Astrophysics Data System (ADS)

Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.

2010-07-01

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.

Gordon Research Conference on Crystal Growth (1990)

DTIC Science & Technology

1990-04-01

Labs, MH) 14. Cox Vapor Levitation Epitaxy of Quantum Wires and Wire-like Structures Using Laterally Propagating Surface Steps. (Bellcore, Red Bank) 15...introduced many new aspects of crystal growth, including strained layer superlattices, quantum cluster growth, and vertical zone melting of GaAs...Films 2. E. Bauser Semiconductor Liquid Phase Epitaxy: Growth and Properties of Layers and Heterostructures 3. M. L. Steigerwald Growth of Quantum

Quantum Accelerators for High-performance Computing Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humble, Travis S.; Britt, Keith A.; Mohiyaddin, Fahd A.

We define some of the programming and system-level challenges facing the application of quantum processing to high-performance computing. Alongside barriers to physical integration, prominent differences in the execution of quantum and conventional programs challenges the intersection of these computational models. Following a brief overview of the state of the art, we discuss recent advances in programming and execution models for hybrid quantum-classical computing. We discuss a novel quantum-accelerator framework that uses specialized kernels to offload select workloads while integrating with existing computing infrastructure. We elaborate on the role of the host operating system to manage these unique accelerator resources, themore » prospects for deploying quantum modules, and the requirements placed on the language hierarchy connecting these different system components. We draw on recent advances in the modeling and simulation of quantum computing systems with the development of architectures for hybrid high-performance computing systems and the realization of software stacks for controlling quantum devices. Finally, we present simulation results that describe the expected system-level behavior of high-performance computing systems composed from compute nodes with quantum processing units. We describe performance for these hybrid systems in terms of time-to-solution, accuracy, and energy consumption, and we use simple application examples to estimate the performance advantage of quantum acceleration.« less

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Matrix addressable vertical cavity surface emitting laser array

NASA Astrophysics Data System (ADS)

Orenstein, M.; von Lehmen, A. C.; Chang-Hasnain, C.; Stoffel, N. G.; Harbison, J. P.

1991-02-01

The design, fabrication and characterization of 1024-element matrix-addressable vertical-cavity surface-emitting laser (VCSEL) arrays are described. A strained InGaAs quantum-well VCSEL structure was grown by MBE, and an array of 32 x 32 lasers was defined using a proton implantation process. A matrix addressing architecture was employed, which enables the individual addressing of each of the 1024 lasers using only 64 electrical contacts. All the lasers in the array, measured after the laser definition step, were operating with fairly homogeneous characteristics; threshold current of 6.8 mA and output quantum differential efficiency of about 8 percent.

KSC-2009-1681

NASA Image and Video Library

2009-02-18

VANDENBERG AIR FORCE BASE, Calif. -- On Launch Complex 576-E at Vandenberg Air Force Base in California, NASA's Orbiting Carbon Observatory, or OCO, upper stack is prepared to be raised to vertical. The upper stack, consists of stages 1, 2 and 3 of the Taurus. The spacecraft is scheduled for launch aboard Orbital Sciences' Taurus XL rocket Feb. 24 from Vandenberg. The spacecraft will collect precise global measurements of carbon dioxide (CO2) in the Earth's atmosphere. Scientists will analyze OCO data to improve our understanding of the natural processes and human activities that regulate the abundance and distribution of this important greenhouse gas. Photo credit: NASA/Randy Beaudoin, VAFB

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Generalized teleportation by quantum walks

NASA Astrophysics Data System (ADS)

Wang, Yu; Shang, Yun; Xue, Peng

2017-09-01

We develop a generalized teleportation scheme based on quantum walks with two coins. For an unknown qubit state, we use two-step quantum walks on the line and quantum walks on the cycle with four vertices for teleportation. For any d-dimensional states, quantum walks on complete graphs and quantum walks on d-regular graphs can be used for implementing teleportation. Compared with existing d-dimensional states teleportation, prior entangled state is not required and the necessary maximal entanglement resource is generated by the first step of quantum walk. Moreover, two projective measurements with d elements are needed by quantum walks on the complete graph, rather than one joint measurement with d^2 basis states. Quantum walks have many applications in quantum computation and quantum simulations. This is the first scheme of realizing communicating protocol with quantum walks, thus opening wider applications.

High power density capacitor and method of fabrication

DOEpatents

Tuncer, Enis

2012-11-20

A ductile preform for making a drawn capacitor includes a plurality of electrically insulating, ductile insulator plates and a plurality of electrically conductive, ductile capacitor plates. Each insulator plate is stacked vertically on a respective capacitor plate and each capacitor plate is stacked on a corresponding insulator plate in alignment with only one edge so that other edges are not in alignment and so that each insulator plate extends beyond the other edges. One or more electrically insulating, ductile spacers are disposed in horizontal alignment with each capacitor plate along the other edges and the pattern is repeated so that alternating capacitor plates are stacked on alternating opposite edges of the insulator plates. A final insulator plate is positioned at an extremity of the preform. The preform may then be drawn to fuse the components and decrease the dimensions of the preform that are perpendicular to the direction of the draw.

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation

PubMed Central

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Lai, Chao-Sung; Ying, Shang-Ping

2018-01-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts’ material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method. PMID:29494534

RGB-Stack Light Emitting Diode Modules with Transparent Glass Circuit Board and Oil Encapsulation.

PubMed

Li, Ying-Chang; Chang, Yuan-Hsiao; Singh, Preetpal; Chang, Liann-Be; Yeh, Der-Hwa; Chao, Ting-Yu; Jian, Si-Yun; Li, Yu-Chi; Tan, Cher Ming; Lai, Chao-Sung; Chow, Lee; Ying, Shang-Ping

2018-03-01

The light emitting diode (LED) is widely used in modern solid-state lighting applications, and its output efficiency is closely related to the submounts' material properties. Most submounts used today, such as low-power printed circuit boards (PCBs) or high-power metal core printed circuit boards (MCPCBs), are not transparent and seriously decrease the output light extraction. To meet the requirements of high light output and better color mixing, a three-dimensional (3-D) stacked flip-chip (FC) LED module is proposed and demonstrated. To realize light penetration and mixing, the mentioned 3-D vertically stacking RGB LEDs use transparent glass as FC package submounts called glass circuit boards (GCB). Light emitted from each GCB stacked LEDs passes through each other and thus exhibits good output efficiency and homogeneous light-mixing characteristics. In this work, the parasitic problem of heat accumulation, which caused by the poor thermal conductivity of GCB and leads to a serious decrease in output efficiency, is solved by a proposed transparent cooling oil encapsulation (OCP) method.

A wavelet-based Bayesian framework for 3D object segmentation in microscopy

NASA Astrophysics Data System (ADS)

Pan, Kangyu; Corrigan, David; Hillebrand, Jens; Ramaswami, Mani; Kokaram, Anil

2012-03-01

In confocal microscopy, target objects are labeled with fluorescent markers in the living specimen, and usually appear with irregular brightness in the observed images. Also, due to the existence of out-of-focus objects in the image, the segmentation of 3-D objects in the stack of image slices captured at different depth levels of the specimen is still heavily relied on manual analysis. In this paper, a novel Bayesian model is proposed for segmenting 3-D synaptic objects from given image stack. In order to solve the irregular brightness and out-offocus problems, the segmentation model employs a likelihood using the luminance-invariant 'wavelet features' of image objects in the dual-tree complex wavelet domain as well as a likelihood based on the vertical intensity profile of the image stack in 3-D. Furthermore, a smoothness 'frame' prior based on the a priori knowledge of the connections of the synapses is introduced to the model for enhancing the connectivity of the synapses. As a result, our model can successfully segment the in-focus target synaptic object from a 3D image stack with irregular brightness.

Internal electrolyte supply system for reliable transport throughout fuel cell stacks

DOEpatents

Wright, Maynard K.; Downs, Robert E.; King, Robert B.

1988-01-01

An improved internal electrolyte supply system in a fuel cell stack employs a variety of arrangements of grooves and passages in bipolar plates of the multiplicity of repeating fuel cells to route gravity-assisted flowing electrolyte throughout the stack. The grooves route electrolyte flow along series of first paths which extend horizontally through the cells between the plates thereof. The passages route electrolyte flow along series of second paths which extend vertically through the stack so as to supply electrolyte to the first paths in order to expose the electrolyte to the matrices of the cells. Five different embodiments of the supply system are disclosed. Some embodiments employ wicks in the grooves for facilitating transfer of the electrolyte to the matrices as well as providing support for the matrices. Additionally, the passages of some embodiments by-pass certain of the grooves and supply electrolyte directly to other of the grooves. Some embodiments employ single grooves and others have dual grooves. Finally, in some embodiments the passages are connected to the grooves by a step which produces a cascading electrolyte flow.

Quantum walk on a chimera graph

NASA Astrophysics Data System (ADS)

Xu, Shu; Sun, Xiangxiang; Wu, Jizhou; Zhang, Wei-Wei; Arshed, Nigum; Sanders, Barry C.

2018-05-01

We analyse a continuous-time quantum walk on a chimera graph, which is a graph of choice for designing quantum annealers, and we discover beautiful quantum walk features such as localization that starkly distinguishes classical from quantum behaviour. Motivated by technological thrusts, we study continuous-time quantum walk on enhanced variants of the chimera graph and on diminished chimera graph with a random removal of vertices. We explain the quantum walk by constructing a generating set for a suitable subgroup of graph isomorphisms and corresponding symmetry operators that commute with the quantum walk Hamiltonian; the Hamiltonian and these symmetry operators provide a complete set of labels for the spectrum and the stationary states. Our quantum walk characterization of the chimera graph and its variants yields valuable insights into graphs used for designing quantum-annealers.

Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

PubMed

Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

2015-09-23

Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

Highly Luminescent 2D-Type Slab Crystals Based on a Molecular Charge-Transfer Complex as Promising Organic Light-Emitting Transistor Materials.

PubMed

Park, Sang Kyu; Kim, Jin Hong; Ohto, Tatsuhiko; Yamada, Ryo; Jones, Andrew O F; Whang, Dong Ryeol; Cho, Illhun; Oh, Sangyoon; Hong, Seung Hwa; Kwon, Ji Eon; Kim, Jong H; Olivier, Yoann; Fischer, Roland; Resel, Roland; Gierschner, Johannes; Tada, Hirokazu; Park, Soo Young

2017-09-01

A new 2:1 donor (D):acceptor (A) mixed-stacked charge-transfer (CT) cocrystal comprising isometrically structured dicyanodistyrylbenzene-based D and A molecules is designed and synthesized. Uniform 2D-type morphology is manifested by the exquisite interplay of intermolecular interactions. In addition to its appealing structural features, unique optoelectronic properties are unveiled. Exceptionally high photoluminescence quantum yield (Φ F ≈ 60%) is realized by non-negligible oscillator strength of the S 1 transition, and rigidified 2D-type structure. Moreover, this luminescent 2D-type CT crystal exhibits balanced ambipolar transport (µ h and µ e of ≈10 -4 cm 2 V -1 s -1 ). As a consequence of such unique optoelectronic characteristics, the first CT electroluminescence is demonstrated in a single active-layered organic light-emitting transistor (OLET) device. The external quantum efficiency of this OLET is as high as 1.5% to suggest a promising potential of luminescent mixed-stacked CT cocrystals in OLET applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Engineering three-dimensional topological insulators in Rashba-type spin-orbit coupled heterostructures

PubMed Central

Das, Tanmoy; Balatsky, A. V.

2013-01-01

Topological insulators represent a new class of quantum phase defined by invariant symmetries and spin-orbit coupling that guarantees metallic Dirac excitations at its surface. The discoveries of these states have sparked the hope of realizing non-trivial excitations and novel effects such as a magnetoelectric effect and topological Majorana excitations. Here we develop a theoretical formalism to show that a three-dimensional topological insulator can be designed artificially via stacking bilayers of two-dimensional Fermi gases with opposite Rashba-type spin-orbit coupling on adjacent layers, and with interlayer quantum tunneling. We demonstrate that in the stack of bilayers grown along a (001)-direction, a non-trivial topological phase transition occurs above a critical number of Rashba bilayers. In the topological phase, we find the formation of a single spin-polarized Dirac cone at the -point. This approach offers an accessible way to design artificial topological insulators in a set up that takes full advantage of the atomic layer deposition approach. This design principle is tunable and also allows us to bypass limitations imposed by bulk crystal geometry. PMID:23739724

Picosecond timing resolution detection of ggr-photons utilizing microchannel-plate detectors: experimental tests of quantum nonlocality and photon localization

NASA Astrophysics Data System (ADS)

Irby, Victor D.

2004-09-01

The concept and subsequent experimental verification of the proportionality between pulse amplitude and detector transit time for microchannel-plate detectors is presented. This discovery has led to considerable improvement in the overall timing resolution for detection of high-energy ggr-photons. Utilizing a 22Na positron source, a full width half maximum (FWHM) timing resolution of 138 ps has been achieved. This FWHM includes detector transit-time spread for both chevron-stack-type detectors, timing spread due to uncertainties in annihilation location, all electronic uncertainty and any remaining quantum mechanical uncertainty. The first measurement of the minimum quantum uncertainty in the time interval between detection of the two annihilation photons is reported. The experimental results give strong evidence against instantaneous spatial localization of ggr-photons due to measurement-induced nonlocal quantum wavefunction collapse. The experimental results are also the first that imply momentum is conserved only after the quantum uncertainty in time has elapsed (Yukawa H 1935 Proc. Phys. Math. Soc. Japan 17 48).

Tandem luminescent solar concentrators based on engineered quantum dots

NASA Astrophysics Data System (ADS)

Wu, Kaifeng; Li, Hongbo; Klimov, Victor I.

2018-02-01

Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for terrestrial and space-based photovoltaics. Due to their high emission efficiencies and readily tunable emission and absorption spectra, colloidal quantum dots have emerged as a new and promising type of LSC fluorophore. Spectral tunability of the quantum dots also facilitates the realization of stacked multilayered LSCs, where enhanced performance is obtained through spectral splitting of incident sunlight, as in multijunction photovoltaics. Here, we demonstrate a large-area (>230 cm2) tandem LSC based on two types of nearly reabsorption-free quantum dots spectrally tuned for optimal solar-spectrum splitting. This prototype device exhibits a high optical quantum efficiency of 6.4% for sunlight illumination and solar-to-electrical power conversion efficiency of 3.1%. The efficiency gains due to the tandem architecture over single-layer devices quickly increase with increasing LSC size and can reach more than 100% in structures with window sizes of more than 2,500 cm2.

Reversibility in Quantum Models of Stochastic Processes

NASA Astrophysics Data System (ADS)

Gier, David; Crutchfield, James; Mahoney, John; James, Ryan

Natural phenomena such as time series of neural firing, orientation of layers in crystal stacking and successive measurements in spin-systems are inherently probabilistic. The provably minimal classical models of such stochastic processes are ɛ-machines, which consist of internal states, transition probabilities between states and output values. The topological properties of the ɛ-machine for a given process characterize the structure, memory and patterns of that process. However ɛ-machines are often not ideal because their statistical complexity (Cμ) is demonstrably greater than the excess entropy (E) of the processes they represent. Quantum models (q-machines) of the same processes can do better in that their statistical complexity (Cq) obeys the relation Cμ >= Cq >= E. q-machines can be constructed to consider longer lengths of strings, resulting in greater compression. With code-words of sufficiently long length, the statistical complexity becomes time-symmetric - a feature apparently novel to this quantum representation. This result has ramifications for compression of classical information in quantum computing and quantum communication technology.

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down tomore » the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.« less

Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

Vertical electric field induced suppression of fine structure splitting of excited state excitons in a single GaAs/AlGaAs island quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghali, Mohsen; Laboratory of Nanophotonics, Physics Department, Faculty of Science, Kafrelsheikh University, 33516 Kafrelsheikh; Ohno, Yuzo

2015-09-21

We report experimentally on fine structure splitting (FSS) of various excitonic transitions in single GaAs island quantum dots, formed by a monolayer thickness fluctuation in the narrow GaAs/AlGaAs quantum well, and embedded in an n-i-Schottky diode device. By applying a forward vertical electric field (F) between the top metallic contact and the sample substrate, we observed an in-plane polarization rotation of both the ground and the excited state excitons with increasing the electric field. The polarization rotations were accompanied with a strong decrease in the FSS of the ground as well as the excited state excitons with the field, untilmore » the FSS vanished as F approached 30 kV/cm.« less

Exchange interaction and the tunneling induced transparency in coupled quantum dots

NASA Astrophysics Data System (ADS)

Borges, Halyne; Alcalde, Augusto; Ulloa, Sergio

2014-03-01

Stacked semiconductor quantum dots coupled by tunneling are unique ``quantum molecule'' where it is possible to create a multilevel structure of excitonic states. This structure allows the investigation of quantum interference processes and their control via electric external fields. In this work, we investigate the optical response of a quantum molecule coherently driven by a polarized laser, considering the splitting in excitonic levels caused by isotropic and anisotropic exchange interactions. In our model we consider interdot transitions mediated by the the hole tunneling between states with the same total spin and, between bright and dark exciton states. Using realistic experimental parameters, we demonstrate that the excitonic states coupled by tunneling exhibit an enriched and controllable optical response. Our results show that through the appropriate control of the external electric field and light polarization, the tunneling coupling establishes an efficient destructive quantum interference path that creates a transparency window in the absorption spectra, whenever states of appropriate symmetry are mixed by the hole tunneling. We explore the relevant parameters space that would allows with the experiments. CAPES, INCT-IQ and MWN/CIAM-NSF.

Spatial Search by Quantum Walk is Optimal for Almost all Graphs.

PubMed

Chakraborty, Shantanav; Novo, Leonardo; Ambainis, Andris; Omar, Yasser

2016-03-11

The problem of finding a marked node in a graph can be solved by the spatial search algorithm based on continuous-time quantum walks (CTQW). However, this algorithm is known to run in optimal time only for a handful of graphs. In this work, we prove that for Erdös-Renyi random graphs, i.e., graphs of n vertices where each edge exists with probability p, search by CTQW is almost surely optimal as long as p≥log^{3/2}(n)/n. Consequently, we show that quantum spatial search is in fact optimal for almost all graphs, meaning that the fraction of graphs of n vertices for which this optimality holds tends to one in the asymptotic limit. We obtain this result by proving that search is optimal on graphs where the ratio between the second largest and the largest eigenvalue is bounded by a constant smaller than 1. Finally, we show that we can extend our results on search to establish high fidelity quantum communication between two arbitrary nodes of a random network of interacting qubits, namely, to perform quantum state transfer, as well as entanglement generation. Our work shows that quantum information tasks typically designed for structured systems retain performance in very disordered structures.

A variable partially polarizing beam splitter.

PubMed

Flórez, Jefferson; Carlson, Nathan J; Nacke, Codey H; Giner, Lambert; Lundeen, Jeff S

2018-02-01

We present designs for variably polarizing beam splitters. These are beam splitters allowing the complete and independent control of the horizontal and vertical polarization splitting ratios. They have quantum optics and quantum information applications, such as quantum logic gates for quantum computing and non-local measurements for quantum state estimation. At the heart of each design is an interferometer. We experimentally demonstrate one particular implementation, a displaced Sagnac interferometer configuration, that provides an inherent instability to air currents and vibrations. Furthermore, this design does not require any custom-made optics but only common components which can be easily found in an optics laboratory.

A variable partially polarizing beam splitter

NASA Astrophysics Data System (ADS)

Flórez, Jefferson; Carlson, Nathan J.; Nacke, Codey H.; Giner, Lambert; Lundeen, Jeff S.

2018-02-01

We present designs for variably polarizing beam splitters. These are beam splitters allowing the complete and independent control of the horizontal and vertical polarization splitting ratios. They have quantum optics and quantum information applications, such as quantum logic gates for quantum computing and non-local measurements for quantum state estimation. At the heart of each design is an interferometer. We experimentally demonstrate one particular implementation, a displaced Sagnac interferometer configuration, that provides an inherent instability to air currents and vibrations. Furthermore, this design does not require any custom-made optics but only common components which can be easily found in an optics laboratory.

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

PubMed

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Improved quantum backtracking algorithms using effective resistance estimates

NASA Astrophysics Data System (ADS)

Jarret, Michael; Wan, Kianna

2018-02-01

We investigate quantum backtracking algorithms of the type introduced by Montanaro (Montanaro, arXiv:1509.02374). These algorithms explore trees of unknown structure and in certain settings exponentially outperform their classical counterparts. Some of the previous work focused on obtaining a quantum advantage for trees in which a unique marked vertex is promised to exist. We remove this restriction by recharacterizing the problem in terms of the effective resistance of the search space. In this paper, we present a generalization of one of Montanaro's algorithms to trees containing k marked vertices, where k is not necessarily known a priori. Our approach involves using amplitude estimation to determine a near-optimal weighting of a diffusion operator, which can then be applied to prepare a superposition state with support only on marked vertices and ancestors thereof. By repeatedly sampling this state and updating the input vertex, a marked vertex is reached in a logarithmic number of steps. The algorithm thereby achieves the conjectured bound of O ˜(√{T Rmax }) for finding a single marked vertex and O ˜(k √{T Rmax }) for finding all k marked vertices, where T is an upper bound on the tree size and Rmax is the maximum effective resistance encountered by the algorithm. This constitutes a speedup over Montanaro's original procedure in both the case of finding one and the case of finding multiple marked vertices in an arbitrary tree.

Multi-million atom electronic structure calculations for quantum dots

NASA Astrophysics Data System (ADS)

Usman, Muhammad

Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted as artificial atoms with the potential to be custom tailored to new functionality. In the past decade or so, these nanostructures have attracted significant experimental and theoretical attention in the field of nanoscience. The new and tunable optical and electrical properties of these artificial atoms have been proposed in a variety of different fields, for example in communication and computing systems, medical and quantum computing applications. Predictive and quantitative modeling and simulation of these structures can help to narrow down the vast design space to a range that is experimentally affordable and move this part of nanoscience to nano-Technology. Modeling of such quantum dots pose a formidable challenge to theoretical physicists because: (1) Strain originating from the lattice mismatch of the materials penetrates deep inside the buffer surrounding the quantum dots and require large scale (multi-million atom) simulations to correctly capture its effect on the electronic structure, (2) The interface roughness, the alloy randomness, and the atomistic granularity require the calculation of electronic structure at the atomistic scale. Most of the current or past theoretical calculations are based on continuum approach such as effective mass approximation or k.p modeling capturing either no or one of the above mentioned effects, thus missing some of the essential physics. The Objectives of this thesis are: (1) to model and simulate the experimental quantum dot topologies at the atomistic scale; (2) to theoretically explore the essential physics i.e. long range strain, linear and quadratic piezoelectricity, interband optical transition strengths, quantum confined stark shift, coherent coupling of electronic states in a quantum dot molecule etc.; (3) to assess the potential use of the quantum dots in real device implementation and to provide physical insight to the experimentalists. Full three dimensional strain and electronic structure simulations of quantum dot structures containing multi-million atoms are done using NEMO 3-D. Both single and vertically stacked quantum dot structures are analyzed in detail. The results show that the strain and the piezoelectricity significantly impact the electronic structure of these devices. This work shows that the InAs quantum dots when placed in the InGaAs quantum well red shifts the emission wavelength. Such InAs/GaAs-based optical devices can be used for optical-fiber based communication systems at longer wavelengths (1.3um -- 1.5um). Our atomistic simulations of InAs/InGaAs/GaAs quantum dots quantitatively match with the experiment and give the critical insight of the physics involved in these structures. A single quantum dot molecule is studied for coherent quantum coupling of electronic states under the influence of static electric field applied in the growth direction. Such nanostructures can be used in the implementation of quantum information technologies. A close quantitative match with the experimental optical measurements allowed us to get a physical insight into the complex physics of quantum tunnel couplings of electronic states as the device operation switches between atomic and molecular regimes. Another important aspect is to design the quantum dots for a desired isotropic polarization of the optical emissions. Both single and coupled quantum dots are studied for TE/TM ratio engineering. The atomistic study provides a detailed physical analysis of these computationally expensive large nanostructures and serves as a guide for the experimentalists for the design of the polarization independent devices for the optical communication systems.

A Nanowire-Based Plasmonic Quantum Dot Laser.

PubMed

Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2016-04-13

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

Kinematic analysis of the Migif area in the Eastern Desert of Egypt

NASA Astrophysics Data System (ADS)

Kassem, Osama M. K.

2014-11-01

The use of porphyroclasts rotating in a flowing matrix to estimate mean kinematic vorticity number (Wm) is important for quantifying the relative contributions of pure and simple shear in penetratively deformed rocks. The kinematic vorticity number determined for high temperature mylonitic gneisses in the Migif area in the Eastern Desert of Egypt range from ∼0.6 to 0.9. The results from vorticity and strain analyses indicate that deformation in the area deviated from simple shear. It is concluded that nappe stacking occurred early during the thrusting event, probably by brittle imbrications, and that ductile strain was superimposed on the nappe structure at high-pressure as shown by a penetrative subhorizontal foliation is developed subparallel to the tectonic contacts with the under- and overlying nappes. The accumulation of ductile strain during underplating was not by simple shear but involved a component of vertical shortening, which caused the subhorizontal foliation in the Migif area. In most cases, this foliation was formed during thrusting of the nappes onto each other, suggesting that nappe stacking was associated with vertical shortening.

Scale dependant compensational stacking of channelized sedimentary deposits

NASA Astrophysics Data System (ADS)

Wang, Y.; Straub, K. M.; Hajek, E. A.

2010-12-01

Compensational stacking, the tendency for sediment transport system to preferentially fill topographic lows, thus smoothing out topographic relief is a concept used in the interpretation of the stratigraphic record. Recently, a metric was developed to quantify the strength of compensation in sedimentary basins by comparing observed stacking patterns to what would be expected from simple, uncorrelated stacking. This method uses the rate of decay of spatial variability in sedimentation between picked depositional horizons with increasing vertical stratigraphic averaging distance. We explore how this metric varies as a function of stratigraphic scale using data from physical experiments, stratigraphy exposed in outcrops and numerical models. In an experiment conducted at Tulane University’s Sediment Dynamics Laboratory, the topography of a channelized delta formed by weakly cohesive sediment was monitored along flow-perpendicular transects at a high temporal resolution relative to channel kinematics. Over the course of this experiment a uniform relative subsidence pattern, designed to isolate autogenic processes, resulted in the construction of a stratigraphic package that is 25 times as thick as the depth of the experimental channels. We observe a scale-dependence on the compensational stacking of deposits set by the system’s avulsion time-scale. Above the avulsion time-scale deposits stack purely compensationally, but below this time-scale deposits stack somewhere between randomly and deterministically. The well-exposed Ferris Formation (Cretaceous/Paleogene, Hanna Basin, Wyoming, USA) also shows scale-dependant stratigraphic organization which appears to be set by an avulsion time-scale. Finally, we utilize simple object-based models to illustrate how channel avulsions influence compensation in alluvial basins.

Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

PubMed

Owerre, S A

2016-11-30

In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111)

NASA Astrophysics Data System (ADS)

Moshe, O.; Rich, D. H.; Damilano, B.; Massies, J.

2008-04-01

Cathodoluminescence (CL) measurements of the ground-state excitonic transition of vertically stacked GaN/AlN quantum dots (QDs) exhibited an in-plane linear polarization anisotropy in close proximity to microcracks. Microcracks form as a result of a mismatch of the thermal expansion coefficient between the GaN/AlN layers and the Si(111) substrate. In close proximity to the cracks, the layers are found to be under uniaxial tensile stress, whereas the film is under biaxial tensile stress for distances greater than ˜3μm from the cracks. The microcracks serve as an excellent stressor through which the strain tensor of the GaN/AlN QDs can be reproducibly modified for studies of strain-induced changes in the optical and electronic properties by using a spatially resolved probe, such as with CL. Changes in the optical properties of the QDs are attributed to stress-dependent variations of the band edges and the electric field along [0001], which is caused by charge polarization. Such changes in the field will subsequently affect the oscillator strength between electrons and holes. Three-dimensional 6×6 kṡp calculations of the QD electron and hole wave functions and eigenstates were performed to examine the influence of biaxial and uniaxial tensile stresses on the polarization-dependent momentum matrix element in varying proximity to the microcracks. The model reveals that a change from biaxial to uniaxial stress alters the admixture of px and py characters of the band edges and the ground-state hole wave function, changes the shape and direction of elongation of the hole isosurfaces, and accounts well for the subsequent anisotropy in the polarization dependent optical transitions.

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

NASA Technical Reports Server (NTRS)

Qui, Y.; Uhl, D.; Keo, S.

2003-01-01

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

NASA's Interests in Bioregenerative Life Support

NASA Technical Reports Server (NTRS)

Wheeler, Raymond M.

2018-01-01

NASA and other space agencies and around the world have had long-standing interest in using plants and biological approaches for regenerative life support. In particular, NASA's Kennedy Space Center, has conducted research in this area for over 30 years. One unique aspect to this testing was NASA's Biomass Production Chamber, which had four vertically stacked growing shelves inside a large, 113 cubic meter chamber. This was perhaps one of the first working examples of a vertical agriculture system in the world. A review of some of this research along with some of the more salient findings will be presented.

Fusion of Cross-Track TerraSAR-X PS Point Clouds over Las Vegas

NASA Astrophysics Data System (ADS)

Wang, Ziyun; Balz, Timo; Wei, Lianhuan; Liao, Mingsheng

2014-11-01

Persistent scatterer interferometry (PS-InSAR) is widely used in radar remote sensing. However, because the surface motion is estimated in the line-of-sight (LOS) direction, it is not possible to differentiate between vertical and horizontal surface motions from a single stack. Cross-track data, i.e. the combination of data from ascending and descending orbits, allows us to better analyze the deformation and to obtain 3d motion information. We implemented a cross-track fusion of PS-InSAR point cloud data, making it possible to separate the vertical and horizontal components of the surface motion.

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and {sup 15}N isotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Li, Guowang; Protasenko, Vladimir

2015-01-26

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics.

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leszczynski, Jerzy; Sponer, Judit; Sponer, Jiri

Recent experimental studies on the Watson Crick type base pairing of triazine and aminopyrimidine derivatives suggest that acid/base properties of the constituent bases might be related to the duplex stabilities measured in solution. Herein we use high-level quantum chemical calculations and molecular dynamics simulations to evaluate the base pairing and stacking interactions of seven selected base pairs, which are common in that they are stabilized by two NH O hydrogen bonds separated by one NH N hydrogen bond. We show that neither the base pairing nor the base stacking interaction energies correlate with the reported pKa data of the basesmore » and the melting points of the duplexes. This suggests that the experimentally observed correlation between the melting point data of the duplexes and the pKa values of the constituent bases is not rooted in the intrinsic base pairing and stacking properties. The physical chemistry origin of the observed experimental correlation thus remains unexplained and requires further investigations. In addition, since our calculations are carried out with extrapolation to the complete basis set of atomic orbitals and with inclusion of higher electron correlation effects, they provide reference data for stacking and base pairing energies of non-natural bases.« less

Characterization of π-stacking interactions between aromatic amino acids and quercetagetin

NASA Astrophysics Data System (ADS)

Akher, Farideh Badichi; Ebrahimi, Ali; Mostafavi, Najmeh

2017-01-01

In the present study, the π-stacking interactions between quercetagetin (QUE), which is one of the most representative flavonol compounds with biological and chemical activities, and some aromatic amino acid (AA) residues has been investigated by the quantum mechanical calculations. The trend in the absolute value of stacking interaction energy |ΔE| with respect to AAs is HIS > PHE > TYR > TPR. The results show that the sum of donor-acceptor interaction energy between AAs and QUE (∑E2) and the sum of electron densities ρ calculated at BCPs and CCPs between the rings (∑ρBCPs and ∑ρCCP) can be useful descriptors for prediction of the ΔE values of the complexes. The Osbnd H bond dissociation enthalpy (BDE) slightly decreases by the π-stacking interaction, which confirms the positive effect of that interaction on the antioxidant activity of QUE. A reverse trend is observed for BDE when is compared with the |ΔE| values. A reliable relationship is also observed between the Muliken spin density (MSD) distributions of the radical species and the most convenient Osbnd H bond dissociations. In addition, reactivity is in good correlation with the antioxidant activity of the complexes.

40 CFR 63.7327 - How do I demonstrate initial compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2010 CFR

2010-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Initial Compliance... me? (a) For each by-product coke oven battery with vertical flues subject to the work practice...-product coke oven battery with horizontal flues subject to the work practice standards for fugitive...

40 CFR 63.7327 - How do I demonstrate initial compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2011 CFR

2011-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Initial Compliance... me? (a) For each by-product coke oven battery with vertical flues subject to the work practice...-product coke oven battery with horizontal flues subject to the work practice standards for fugitive...

40 CFR 63.7327 - How do I demonstrate initial compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2014 CFR

2014-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Initial Compliance... me? (a) For each by-product coke oven battery with vertical flues subject to the work practice...-product coke oven battery with horizontal flues subject to the work practice standards for fugitive...

40 CFR 63.7327 - How do I demonstrate initial compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2013 CFR

2013-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Initial Compliance... me? (a) For each by-product coke oven battery with vertical flues subject to the work practice...-product coke oven battery with horizontal flues subject to the work practice standards for fugitive...

Clustering on Magnesium Surfaces - Formation and Diffusion Energies.

PubMed

Chu, Haijian; Huang, Hanchen; Wang, Jian

2017-07-12

The formation and diffusion energies of atomic clusters on Mg surfaces determine the surface roughness and formation of faulted structure, which in turn affect the mechanical deformation of Mg. This paper reports first principles density function theory (DFT) based quantum mechanics calculation results of atomic clustering on the low energy surfaces {0001} and [Formula: see text]. In parallel, molecular statics calculations serve to test the validity of two interatomic potentials and to extend the scope of the DFT studies. On a {0001} surface, a compact cluster consisting of few than three atoms energetically prefers a face-centered-cubic stacking, to serve as a nucleus of stacking fault. On a [Formula: see text], clusters of any size always prefer hexagonal-close-packed stacking. Adatom diffusion on surface [Formula: see text] is high anisotropic while isotropic on surface (0001). Three-dimensional Ehrlich-Schwoebel barriers converge as the step height is three atomic layers or thicker. Adatom diffusion along steps is via hopping mechanism, and that down steps is via exchange mechanism.

Manipulation of domain-wall solitons in bi- and trilayer graphene

NASA Astrophysics Data System (ADS)

Jiang, Lili; Wang, Sheng; Shi, Zhiwen; Jin, Chenhao; Utama, M. Iqbal Bakti; Zhao, Sihan; Shen, Yuen-Ron; Gao, Hong-Jun; Zhang, Guangyu; Wang, Feng

2018-01-01

Topological dislocations and stacking faults greatly affect the performance of functional crystalline materials1-3. Layer-stacking domain walls (DWs) in graphene alter its electronic properties and give rise to fascinating new physics such as quantum valley Hall edge states4-10. Extensive efforts have been dedicated to the engineering of dislocations to obtain materials with advanced properties. However, the manipulation of individual dislocations to precisely control the local structure and local properties of bulk material remains an outstanding challenge. Here we report the manipulation of individual layer-stacking DWs in bi- and trilayer graphene by means of a local mechanical force exerted by an atomic force microscope tip. We demonstrate experimentally the capability to move, erase and split individual DWs as well as annihilate or create closed-loop DWs. We further show that the DW motion is highly anisotropic, offering a simple approach to create solitons with designed atomic structures. Most artificially created DW structures are found to be stable at room temperature.

Anion-π interaction in metal-organic networks formed by metal halides and tetracyanopyrazine

NASA Astrophysics Data System (ADS)

Rosokha, Sergiy V.; Kumar, Amar

2017-06-01

Co-crystallization of tetracyanopyrazine, TCP, with the tetraalkylammonium salts of linear [CuBr2]-, planar [PtCl4]2- or [Pt2Br6]2-, or octahedral [PtBr6]2- complexes resulted in formation of the alternating [MlXn]m-/TCP stacks separated by the Alk4N+ cations. These hybrid stacks showed multiple short contacts between halide ligands of the [MlXn]m- complexes and carbon atoms of the TCP acceptor indicating strong anion-π bonding between these species. It confirmed that the anion-π interaction is sufficiently strong to bring together such disparate components as ionic metal complexes and neutral aromatic molecules regardless of the geometry of the coordination compound. Structural features of the solid-state stacks and [MlXn]m-·TCP dyads resulted from the quantum-mechanical computations suggests that the molecular-orbital (weakly-covalent) component play an important role in association of the [MlXn]m- complexes with the TCP acceptor.

Optoelectronic Materials Center

DTIC Science & Technology

1991-06-11

surface - emitting GaAs/AIGaAs vertical - cavity laser (TJ- VCSEL ) incorporating wavelength-resonant...multi-quantum well, vertical cavity surface - emitted laser . This structure consists entirely of undoped epilayers, thus simplifying the problems of... cavity surface - emitting lasers ( VCSELs ) for doubling and for parallel optical data processing. Progress - GaAIAs/GaAs and InGaAs/GaAs RPG- VCSEL

Experimental study of switching in a rho-i(MQW)-eta vertical coupler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cavailles, J.A.; Erman, M.; Woodbridge, K.

1989-11-01

Electrically controlled switching in a vertically arranged directional coupler with GaAs/GaAIAs multiple quantum well waveguides is demonstrated. Coupling lengths and extinction parameters are determined by using a sample processed in such a way that injection conditions are well defined and that the coupler length can be varied continuously.

Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.

PubMed

Kang, Jeongmin; Moon, Taeho; Jeon, Youngin; Kim, Hoyoung; Kim, Sangsig

2013-05-01

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I(ON)/I(OFF) of > 10(6), with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of -93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.

REACTOR MODERATOR STRUCTURE

DOEpatents

Fraas, A.P.; Tudor, J.J.

1963-08-01

An improved moderator structure for nuclear reactors consists of moderator blocks arranged in horizontal layers to form a multiplicity of vertically stacked columns of blocks. The blocks in each vertical column are keyed together, and a ceramic grid is disposed between each horizontal layer of blocks. Pressure plates cover- the lateral surface of the moderator structure in abutting relationship with the peripheral terminal lengths of the ceramic grids. Tubular springs are disposed between the pressure plates and a rigid external support. The tubular springs have their axes vertically disposed to facilitate passage of coolant gas through the springs and are spaced apart a selected distance such that at sonae preselected point of spring deflection, the sides of the springs will contact adjacent springs thereby causing a large increase in resistance to further spring deflection. (AEC)

Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots.

PubMed

Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

2015-03-12

Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.

Characterization of individual straight and kinked boron carbide nanowires

NASA Astrophysics Data System (ADS)

Cui, Zhiguang

Boron carbides represent a class of ceramic materials with p-type semiconductor natures, complex structures and a wide homogeneous range of carbon compositions. Bulk boron carbides have long been projected as promising high temperature thermoelectric materials, but with limited performance. Bringing the bulk boron carbides to low dimensions (e.g., nanowires) is believed to be an option to enhance their thermoelectric performance because of the quantum size effects. However, the fundamental studies on the microstructure-thermal property relation of boron carbide nanowires are elusive. In this dissertation work, systematic structural characterization and thermal conductivity measurement of individual straight and kinked boron carbide nanowires were carried out to establish the true structure-thermal transport relation. In addition, a preliminary Raman spectroscopy study on identifying the defects in individual boron carbide nanowires was conducted. After the synthesis of single crystalline boron carbide nanowires, straight nanowires accompanied by the kinked ones were observed. Detailed structures of straight boron carbide nanowires have been reported, but not the kinked ones. After carefully examining tens of kinked nanowires utilizing Transmission Electron Microscopy (TEM), it was found that they could be categorized into five cases depending on the stacking faults orientations in the two arms of the kink: TF-TF, AF-TF, AF-AF, TF-IF and AF-IF kinks, in which TF, AF and IF denotes transverse faults (preferred growth direction perpendicular to the stacking fault planes), axial faults (preferred growth direction in parallel with the stacking fault planes) and inclined faults (preferred growth direction neither perpendicular to nor in parallel with the stacking fault planes). Simple structure models describing the characteristics of TF-TF, AF-TF, AF-AF kinked nanowires are constructed in SolidWorks, which help to differentiate the kinked nanowires viewed from the zone axes where stacking faults are invisible. In collaboration with the experts in the field of thermal property characterization of one dimensional nanostructures, thermal conductivities of over 60 nanowires including both straight and kinked ones have been measured in the temperature range of 20 - 420 K and the parameters (i.e., carbon contents, diameters, stacking faults densities/orientations and kinks) affecting the phonon transport were explored. The results disclose strong carbon content and diameter dependence of thermal conductivities of boron carbide nanowires, which decreases as lowering the carbon content and diameter. Stacking fault orientations do modulate the phonon transport (kappaTF < kappa AF), while stacking fault densities seems to only have obvious effects on phonon transport when meeting certain threshold ( 39%). The most interesting discovery is significant reduction of thermal conductivity (15% - 40%) in kinked boron carbide nanowires due to phonon mode conversions and scattering at the kink site. Last but not least, micro-Raman spectroscopy study on individual boron carbide nanowires has been performed for the first time, to the best of our knowledge. Based on the preliminary data, it is found that the stacking fault orientations have no apparent effect on the Raman scattering, but the stacking fault densities do. In addition, up as the size going down to nanoscale, some Raman modes are inactive while some new ones show up, which is largely ascribed to the quantum confinement effects. One more important finding is that the carbon content also plays important role in the Raman scattering of boron carbide nanowires in the low frequency region (< 600 cm-1), which mainly comes from the 3-atom chains (C-B-C or C-B-B).

Dissecting the structural determinants for the difference in mechanical stability of silk and amyloid beta-sheet stacks.

PubMed

Xiao, Senbo; Xiao, Shijun; Gräter, Frauke

2013-06-14

Stacking of β-sheets results in a protein super secondary structure with remarkable mechanical properties. β-Stacks are the determinants of a silk fiber's resilience and are also the building blocks of amyloid fibrils. While both silk and amyloid-type crystals are known to feature a high resistance against rupture, their structural and mechanical similarities and particularities are yet to be fully understood. Here, we systematically compare the rupture force and stiffness of amyloid and spider silk poly-alanine β-stacks of comparable sizes using Molecular Dynamics simulations. We identify the direction of force application as the primary determinant of the rupture strength; β-sheets in silk are orientated along the fiber axis, i.e. the pulling direction, and consequently require high forces in the several nanoNewton range for shearing β-strands apart, while β-sheets in amyloid are oriented vertically to the fiber, allowing a zipper-like rupture at sub-nanoNewton forces. A secondary factor rendering amyloid β-stacks softer and weaker than their spider silk counterparts is the sub-optimal side-chain packing between β-sheets due to the sequence variations of amyloid-forming proteins as opposed to the perfectly packed poly-alanine β-sheets of silk. Taken together, amyloid fibers can reach the stiffness of silk fibers in spite of their softer and weaker β-sheet arrangement as they are missing a softening amorphous matrix.

Stacked color image sensor using wavelength-selective organic photoconductive films with zinc-oxide thin film transistors as a signal readout circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Namba, Masakazu; Watabe, Toshihisa; Ohtake, Hiroshi; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Nitta, Hiroshi; Hirao, Takashi

2010-01-01

Our group has been developing a new type of image sensor overlaid with three organic photoconductive films, which are individually sensitive to only one of the primary color components (blue (B), green (G), or red (R) light), with the aim of developing a compact, high resolution color camera without any color separation optical systems. In this paper, we firstly revealed the unique characteristics of organic photoconductive films. Only choosing organic materials can tune the photoconductive properties of the film, especially excellent wavelength selectivities which are good enough to divide the incident light into three primary colors. Color separation with vertically stacked organic films was also shown. In addition, the high-resolution of organic photoconductive films sufficient for high-definition television (HDTV) was confirmed in a shooting experiment using a camera tube. Secondly, as a step toward our goal, we fabricated a stacked organic image sensor with G- and R-sensitive organic photoconductive films, each of which had a zinc oxide (ZnO) thin film transistor (TFT) readout circuit, and demonstrated image pickup at a TV frame rate. A color image with a resolution corresponding to the pixel number of the ZnO TFT readout circuit was obtained from the stacked image sensor. These results show the potential for the development of high-resolution prism-less color cameras with stacked organic photoconductive films.

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown tomore » be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.« less

A highly sensitive biosensing platform based on upconversion nanoparticles and graphene quantum dots for the detection of Ag+

NASA Astrophysics Data System (ADS)

He, Lu; Yang, Lin; Zhu, Hao; Dong, Wenkui; Ding, Yujie; Zhu, Jun-Jie

2017-06-01

A novel luminescence ‘Turn-On’ nanoplatform for the sensitive sensing of Ag+ was fabricated based on luminescence resonance energy transfer technique between sodium citrate functionalized upconversion nanoparticles (Cit-UCNPs, energy donor) and graphene quantum dots (GQDs, energy acceptor). Amino-labeled single-stranded DNA (NH2-ssDNA) containing a number of cytosine (C) was conjugated on the surface of the Cit-UCNPs to capture Ag+ ions. Due to the π-π stacking interaction between NH2-ssDNA and GQDs, the upconversion luminescence can be quenched. However, upon the addition of Ag+, the π-π stacking interaction weakens due to the formation of the hairpin structure of C-Ag+-C on the UCNPs. As a result, GQDs will leave the surface of the UCNPs and the upconversion luminescence can be enhanced (Turn-On). Based on this fact, the sensor was developed for the detection of Ag+ with a linear concentration range from 2 × 10-4 to 1 μM and a detection limit as low as 60 pM. The assay method is fairly simple with high selectivity and sensitivity, which can be used for the determination of Ag+ in environmental water samples.

Theoretical study of the H/D isotope effect on phase transition of hydrogen-bonded organic conductor κ-H3(Cat-EDT-TTF)2.

PubMed

Yamamoto, Kaichi; Kanematsu, Yusuke; Nagashima, Umpei; Ueda, Akira; Mori, Hatsumi; Tachikawa, Masanori

2016-11-02

κ-H 3 (Cat-EDT-TTF) 2 (H-TTF) is a hydrogen-bonded π-electron system which was found to reveal C2/c symmetry at 50-293 K, while its isotopologue, κ-D 3 (Cat-EDT-TTF) 2 (D-TTF), showed the phase transition at 185 K from C2/c to P1[combining macron]. To elucidate the origin of such a difference, we calculated the potential energy curves (PECs) for the hydrogen transfer along the H-bonds in these conductors. We found that both the π-stacking and the hydrogen nuclear quantum effect drastically affected the hydrogen transfer energy. By taking account of both effects, we obtained a symmetric single-well effective PEC for H-TTF, which indicated that the hydrogen was always located at the center of the H-bond. By contrast, the effective PEC of D-TTF was a low-barrier double-well, indicating that the position of the H-bonded deuterium would change according to the temperature. We concluded that the π-stacking and the nuclear quantum effect were the key factors for the appearance of phase transition only in D-TTF.

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors.

PubMed

Malinowski, Pawel E; Georgitzikis, Epimitheas; Maes, Jorick; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-12-10

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10 -6 A/cm² at -2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

Stacking fault related luminescence in GaN nanorods.

PubMed

Forsberg, M; Serban, A; Poenaru, I; Hsiao, C-L; Junaid, M; Birch, J; Pozina, G

2015-09-04

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at ∼3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of ∼20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.

Optical Implementation of the Optimal Universal and Phase-Covariant Quantum Cloning Machines

NASA Astrophysics Data System (ADS)

Ye, Liu; Song, Xue-Ke; Yang, Jie; Yang, Qun; Ma, Yang-Cheng

Quantum cloning relates to the security of quantum computation and quantum communication. In this paper, firstly we propose a feasible unified scheme to implement optimal 1 → 2 universal, 1 → 2 asymmetric and symmetric phase-covariant cloning, and 1 → 2 economical phase-covariant quantum cloning machines only via a beam splitter. Then 1 → 3 economical phase-covariant quantum cloning machines also can be realized by adding another beam splitter in context of linear optics. The scheme is based on the interference of two photons on a beam splitter with different splitting ratios for vertical and horizontal polarization components. It is shown that under certain condition, the scheme is feasible by current experimental technology.

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

NASA Astrophysics Data System (ADS)

Freitag, Nils M.; Reisch, Tobias; Chizhova, Larisa A.; Nemes-Incze, Péter; Holl, Christian; Woods, Colin R.; Gorbachev, Roman V.; Cao, Yang; Geim, Andre K.; Novoselov, Kostya S.; Burgdörfer, Joachim; Libisch, Florian; Morgenstern, Markus

2018-05-01

Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid-state systems, whereas exploitation of the valley has only recently been started, albeit without control at the single-electron level. Here, we show that van der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunnelling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.

Laterally Coupled Quantum-Dot Distributed-Feedback Lasers

NASA Technical Reports Server (NTRS)

Qui, Yueming; Gogna, Pawan; Muller, Richard; Maker, paul; Wilson, Daniel; Stintz, Andreas; Lester, Luke

2003-01-01

InAs quantum-dot lasers that feature distributed feedback and lateral evanescent- wave coupling have been demonstrated in operation at a wavelength of 1.3 m. These lasers are prototypes of optical-communication oscillators that are required to be capable of stable single-frequency, single-spatial-mode operation. A laser of this type (see figure) includes an active layer that comprises multiple stacks of InAs quantum dots embedded within InGaAs quantum wells. Distributed feedback is provided by gratings formed on both sides of a ridge by electron lithography and reactive-ion etching on the surfaces of an AlGaAs/GaAs waveguide. The lateral evanescent-wave coupling between the gratings and the wave propagating in the waveguide is strong enough to ensure operation at a single frequency, and the waveguide is thick enough to sustain a stable single spatial mode. In tests, the lasers were found to emit continuous-wave radiation at temperatures up to about 90 C. Side modes were found to be suppressed by more than 30 dB.

Quasi-molecular bosonic complexes-a pathway to SQUID with controlled sensitivity

NASA Astrophysics Data System (ADS)

Safavi-Naini, Arghavan; Capogrosso-Sansone, Barbara; Kuklov, Anatoly; Penna, Vittorio

2016-02-01

Recent experimental advances in realizing degenerate quantum dipolar gases in optical lattices and the flexibility of experimental setups in attaining various geometries offer the opportunity to explore exotic quantum many-body phases stabilized by anisotropic, long-range dipolar interaction. Moreover, the unprecedented control over the various physical properties of these systems, ranging from the quantum statistics of the particles, to the inter-particle interactions, allow one to engineer novel devices. In this paper, we consider dipolar bosons trapped in a stack of one-dimensional optical lattice layers, previously studied in (Safavi-Naini et al 2014 Phys. Rev. A 90 043604). Building on our prior results, we provide a description of the quantum phases stabilized in this system which include composite superfluids (CSFs), solids, and supercounterfluids, most of which are found to be threshold-less with respect to the dipolar interaction strength. We also demonstrate the effect of enhanced sensitivity to rotations of a SQUID-type device made of two CSF trapped in a ring-shaped optical lattice layer with weak links.

Analog Exercise Hardware to Implement a High Intensity Exercise Program During Bed Rest

NASA Technical Reports Server (NTRS)

Loerch, Linda; Newby, Nate; Ploutz-Snyder, Lori

2012-01-01

Background: In order to evaluate novel countermeasure protocols in a space flight analog prior to validation on the International Space Station (ISS), NASA's Human Research Program (HRP) is sponsoring a multi-investigator bedrest campaign that utilizes a combination of commercial and custom-made exercise training hardware to conduct daily resistive and aerobic exercise protocols. This paper will describe these pieces of hardware and how they are used to support current bedrest studies at NASA's Flight Analog Research Unit in Galveston, TX. Discussion: To implement candidate exercise countermeasure studies during extended bed rest studies the following analog hardware are being utilized: Stand alone Zero-Gravity Locomotion Simulator (sZLS) -- a custom built device by NASA, the sZLS allows bedrest subjects to remain supine as they run on a vertically-oriented treadmill (0-15 miles/hour). The treadmill includes a pneumatic subject loading device to provide variable body loading (0-100%) and a harness to keep the subject in contact with the motorized treadmill to provide a ground reaction force at their feet that is quantified by a Kistler Force Plate. Supine Cycle Ergometer -- a commercially available supine cycle ergometer (Lode, Groningen, Netherlands) is used for all cycle ergometer sessions. The ergometer has adjustable shoulder supports and handgrips to help stabilize the subject during exercise. Horizontal Squat Device (HSD) -- a custom built device by Quantum Fitness Corp (Stafford, TX), the HSD allows for squat exercises to be performed while lying in a supine position. The HSD can provide 0 to 600 pounds of force in selectable 5 lb increments, and allows hip translation in both the vertical and horizontal planes. Prone Leg Curl -- a commercially available prone leg curl machine (Cybex International Inc., Medway, MA) is used to complete leg curl exercises. Horizontal Leg Press -- a commercially available horizontal leg press (Quantum Fitness Corporation) is used for leg press and heel raise exercises. Minor modifications were made to the device including adding 200 lbs to the weight stack, raising the frame by 12 inches, making the footplate adjustable, and providing removable handles. Conclusion: A combination of novel and commercial exercise hardware are used to mimic the exercise hardware capabilities aboard the ISS, allowing scientific investigation of new countermeasure protocols in a space flight analog prior to flight validation

Accurate, predictable, repeatable micro-assembly technology for polymer, microfluidic modules.

PubMed

Lee, Tae Yoon; Han, Kyudong; Barrett, Dwhyte O; Park, Sunggook; Soper, Steven A; Murphy, Michael C

2018-01-01

A method for the design, construction, and assembly of modular, polymer-based, microfluidic devices using simple micro-assembly technology was demonstrated to build an integrated fluidic system consisting of vertically stacked modules for carrying out multi-step molecular assays. As an example of the utility of the modular system, point mutation detection using the ligase detection reaction (LDR) following amplification by the polymerase chain reaction (PCR) was carried out. Fluid interconnects and standoffs ensured that temperatures in the vertically stacked reactors were within ± 0.2 C° at the center of the temperature zones and ± 1.1 C° overall. The vertical spacing between modules was confirmed using finite element models (ANSYS, Inc., Canonsburg, PA) to simulate the steady-state temperature distribution for the assembly. Passive alignment structures, including a hemispherical pin-in-hole, a hemispherical pin-in-slot, and a plate-plate lap joint, were developed using screw theory to enable accurate exactly constrained assembly of the microfluidic reactors, cover sheets, and fluid interconnects to facilitate the modular approach. The mean mismatch between the centers of adjacent through holes was 64 ± 7.7 μm, significantly reducing the dead volume necessary to accommodate manufacturing variation. The microfluidic components were easily assembled by hand and the assembly of several different configurations of microfluidic modules for executing the assay was evaluated. Temperatures were measured in the desired range in each reactor. The biochemical performance was comparable to that obtained with benchtop instruments, but took less than 45 min to execute, half the time.

Design and testing of the first 2D Prototype Vertically Integrated Pattern Recognition Associative Memory

NASA Astrophysics Data System (ADS)

Liu, T.; Deptuch, G.; Hoff, J.; Jindariani, S.; Joshi, S.; Olsen, J.; Tran, N.; Trimpl, M.

2015-02-01

An associative memory-based track finding approach has been proposed for a Level 1 tracking trigger to cope with increasing luminosities at the LHC. The associative memory uses a massively parallel architecture to tackle the intrinsically complex combinatorics of track finding algorithms, thus avoiding the typical power law dependence of execution time on occupancy and solving the pattern recognition in times roughly proportional to the number of hits. This is of crucial importance given the large occupancies typical of hadronic collisions. The design of an associative memory system capable of dealing with the complexity of HL-LHC collisions and with the short latency required by Level 1 triggering poses significant, as yet unsolved, technical challenges. For this reason, an aggressive R&D program has been launched at Fermilab to advance state of-the-art associative memory technology, the so called VIPRAM (Vertically Integrated Pattern Recognition Associative Memory) project. The VIPRAM leverages emerging 3D vertical integration technology to build faster and denser Associative Memory devices. The first step is to implement in conventional VLSI the associative memory building blocks that can be used in 3D stacking; in other words, the building blocks are laid out as if it is a 3D design. In this paper, we report on the first successful implementation of a 2D VIPRAM demonstrator chip (protoVIPRAM00). The results show that these building blocks are ready for 3D stacking.

Design and testing of the first 2D Prototype Vertically Integrated Pattern Recognition Associative Memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, T.; Deptuch, G.; Hoff, J.

An associative memory-based track finding approach has been proposed for a Level 1 tracking trigger to cope with increasing luminosities at the LHC. The associative memory uses a massively parallel architecture to tackle the intrinsically complex combinatorics of track finding algorithms, thus avoiding the typical power law dependence of execution time on occupancy and solving the pattern recognition in times roughly proportional to the number of hits. This is of crucial importance given the large occupancies typical of hadronic collisions. The design of an associative memory system capable of dealing with the complexity of HL-LHC collisions and with the shortmore » latency required by Level 1 triggering poses significant, as yet unsolved, technical challenges. For this reason, an aggressive R&D program has been launched at Fermilab to advance state of-the-art associative memory technology, the so called VIPRAM (Vertically Integrated Pattern Recognition Associative Memory) project. The VIPRAM leverages emerging 3D vertical integration technology to build faster and denser Associative Memory devices. The first step is to implement in conventional VLSI the associative memory building blocks that can be used in 3D stacking, in other words, the building blocks are laid out as if it is a 3D design. In this paper, we report on the first successful implementation of a 2D VIPRAM demonstrator chip (protoVIPRAM00). The results show that these building blocks are ready for 3D stacking.« less

CdS/CdSe quantum dot shell decorated vertical ZnO nanowire arrays by spin-coating-based SILAR for photoelectrochemical cells and quantum-dot-sensitized solar cells.

PubMed

Zhang, Ran; Luo, Qiu-Ping; Chen, Hong-Yan; Yu, Xiao-Yun; Kuang, Dai-Bin; Su, Cheng-Yong

2012-04-23

A CdS/CdSe composite shell is assembled onto the surface of ZnO nanowire arrays with a simple spin-coating-based successive ionic layer adsorption and reaction method. The as-prepared photoelectrode exhibit a high photocurrent density in photoelectrochemical cells and also generates good power conversion efficiency in quantum-dot-sensitized solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Spatial Light Modulators with Arbitrary Quantum Well Profiles

DTIC Science & Technology

1991-01-14

vertical cavity surface emitting lasers ( VCSEL ) is also...aDlications stemming from the research effort. An application of the MBE compositional grading technique to vertical cavity surface emitting lasers was described in section 2e. G. Other statements ... cavity surface emitting laser ( VCSEL ). This uses compositionally graded Bragg reflectors to reduce the electrical resistance of the mirrors

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

The effect of different temperature profiles upon the length and crystallinity of vertically-aligned multi-walled carbon nanotubes.

PubMed

Yun, Jongju; Lee, Cheesung; Zheng, Qing; Baik, Seunghyun

2012-08-01

We synthesized vertically-aligned multi-walled carbon nanotubes with an inner diameter of 1.6-7.5 nm and stack height of 80-28600 microm by chemical vapor deposition. The effects of synthesis conditions such as substrate position in the tube furnace, maximum temperature, temperature increasing rate and synthesis duration on the structure of nanotubes were investigated. It was found that slightly faster temperature increase rate resulted in significantly longer length, larger diameter and more defects of nanotubes. Structural parameters such as inner, outer diameters, wall thickness and defects were investigated using transmission electron microscopy and Raman spectroscopy.

New numerical solutions of three-dimensional compressible hydrodynamic convection. [in stars

NASA Technical Reports Server (NTRS)

Hossain, Murshed; Mullan, D. J.

1990-01-01

Numerical solutions of three-dimensional compressible hydrodynamics (including sound waves) in a stratified medium with open boundaries are presented. Convergent/divergent points play a controlling role in the flows, which are dominated by a single frequency related to the mean sound crossing time. Superposed on these rapid compressive flows, slower eddy-like flows eventually create convective transport. The solutions contain small structures stacked on top of larger ones, with vertical scales equal to the local pressure scale heights, H sub p. Although convective transport starts later in the evolution, vertical scales of H sub p are apparently selected at much earlier times by nonlinear compressive effects.

Submersible sodium pump

DOEpatents

Brynsvold, Glen V.; Lopez, John T.; Olich, Eugene E.; West, Calvin W.

1989-01-01

An electromagnetic submerged pump has an outer cylindrical stator with an inner cylindrical conductive core for the submerged pumping of sodium in the cylindrical interstitial volume defined between the stator and core. The cylindrical interstitial volume is typically vertically oriented, and defines an inlet at the bottom and an outlet at the top. The outer stator generates upwardly conveyed toroidal magnetic fields, which fields convey preferably from the bottom of the pump to the top of the pump liquid sodium in the cold leg of a sodium cooled nuclear reactor. The outer cylindrical stator has a vertically disposed duct surrounded by alternately stacked layers of coil units and laminates.

Submersible sodium pump

DOEpatents

Brynsvold, G.V.; Lopez, J.T.; Olich, E.E.; West, C.W.

1989-11-21

An electromagnetic submerged pump has an outer cylindrical stator with an inner cylindrical conductive core for the submerged pumping of sodium in the cylindrical interstitial volume defined between the stator and core. The cylindrical interstitial volume is typically vertically oriented, and defines an inlet at the bottom and an outlet at the top. The outer stator generates upwardly conveyed toroidal magnetic fields, which fields convey preferably from the bottom of the pump to the top of the pump liquid sodium in the cold leg of a sodium cooled nuclear reactor. The outer cylindrical stator has a vertically disposed duct surrounded by alternately stacked layers of coil units and laminates. 14 figs.

40 CFR 63.7327 - How do I demonstrate initial compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2012 CFR

2012-07-01

... Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Initial Compliance Requirements § 63.7327... each by-product coke oven battery with vertical flues subject to the work practice standards for... than the compliance date that is specified in § 63.7283. (b) For each by-product coke oven battery with...

40 CFR 63.7334 - How do I demonstrate continuous compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2010 CFR

2010-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Continuous Compliance... to me? (a) For each by-product coke oven battery with vertical flues subject to the work practice... of the coke mass. End observations of a push when the quench car enters the quench tower. (i) For a...

40 CFR 63.7334 - How do I demonstrate continuous compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2013 CFR

2013-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Continuous Compliance... to me? (a) For each by-product coke oven battery with vertical flues subject to the work practice... of the coke mass. End observations of a push when the quench car enters the quench tower. (i) For a...

40 CFR 63.7334 - How do I demonstrate continuous compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2011 CFR

2011-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Continuous Compliance... to me? (a) For each by-product coke oven battery with vertical flues subject to the work practice... of the coke mass. End observations of a push when the quench car enters the quench tower. (i) For a...

40 CFR 63.7334 - How do I demonstrate continuous compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2014 CFR

2014-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Continuous Compliance... to me? (a) For each by-product coke oven battery with vertical flues subject to the work practice... of the coke mass. End observations of a push when the quench car enters the quench tower. (i) For a...

40 CFR 63.7334 - How do I demonstrate continuous compliance with the work practice standards that apply to me?

Code of Federal Regulations, 2012 CFR

2012-07-01

... Hazardous Air Pollutants for Coke Ovens: Pushing, Quenching, and Battery Stacks Continuous Compliance... to me? (a) For each by-product coke oven battery with vertical flues subject to the work practice... of the coke mass. End observations of a push when the quench car enters the quench tower. (i) For a...

Ingot slicing machine and method

NASA Technical Reports Server (NTRS)

Kuo, Y. S. (Inventor)

1984-01-01

An improved method for simultaneously slicing one or a multiplicity of boules of silicon into silicon wafers is described. A plurality of vertical stacks of horizontal saw blades of circular configuration are arranged in juxtaposed coaxial alignment. Each blade is characterized by having a cutting diameter slightly greater than the cutting diameter of the blade arranged immediately above, imparting a simultaneous rotation to the blades.

Atlantis is lifted from its transporter in the VAB

NASA Technical Reports Server (NTRS)

2001-01-01

KENNEDY SPACE CENTER, Fla. -- In the transfer aisle of the Vehicle Assembly Building, the orbiter Atlantis is suspended vertically via overhead cranes. The orbiter will be rotated and lifted into high bay 1 where it will be stacked with its external tank and solid rocket boosters. Space Shuttle Atlantis is scheduled to launch on mission STS-104 in early July.

Profile of capillary bridges between two vertically stacked cylindrical fibers under gravitational effect

NASA Astrophysics Data System (ADS)

Sun, Xiaohang; Lee, Hoon Joo; Michielsen, Stephen; Wilusz, Eugene

2018-05-01

Although profiles of axisymmetric capillary bridges between two cylindrical fibers have been extensively studied, little research has been reported on capillary bridges under external forces such as the gravitational force. This is because external forces add significant complications to the Laplace-Young equation, making it difficult to predict drop profiles based on analytical approaches. In this paper, simulations of capillary bridges between two vertically stacked cylindrical fibers with gravitational effect taken into consideration are studied. The asymmetrical structure of capillary bridges that are hard to predict based on analytical approaches was studied via a numerical approach based on Surface Evolver (SE). The axial and the circumferential spreading of liquids on two identical fibers in the presence of gravitational effects are predicted to determine when the gravitational effects are significant or can be neglected. The effect of liquid volume, equilibrium contact angle, the distance between two fibers and fiber radii. The simulation results were verified by comparing them with experimental measurements. Based on SE simulations, curves representing the spreading of capillary bridges along the two cylindrical fibers were obtained. The gravitational effect was scaled based on the difference of the spreading on upper and lower fibers.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

PubMed

Miao, Jinshui; Hu, Weida; Guo, Nan; Lu, Zhenyu; Liu, Xingqiang; Liao, Lei; Chen, Pingping; Jiang, Tao; Wu, Shiwei; Ho, Johnny C; Wang, Lin; Chen, Xiaoshuang; Lu, Wei

2015-02-25

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects.

PubMed

Sun, Shuangxi; Mu, Wei; Edwards, Michael; Mencarelli, Davide; Pierantoni, Luca; Fu, Yifeng; Jeppson, Kjell; Liu, Johan

2016-08-19

For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300:1 were obtained. The resistivity of this nanomaterial was found to be as low as ∼10(-8) Ω m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

Self-assembled InN quantum dots on side facets of GaN nanowires

NASA Astrophysics Data System (ADS)

Bi, Zhaoxia; Ek, Martin; Stankevic, Tomas; Colvin, Jovana; Hjort, Martin; Lindgren, David; Lenrick, Filip; Johansson, Jonas; Wallenberg, L. Reine; Timm, Rainer; Feidenhans'l, Robert; Mikkelsen, Anders; Borgström, Magnus T.; Gustafsson, Anders; Ohlsson, B. Jonas; Monemar, Bo; Samuelson, Lars

2018-04-01

Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (…ABABCBC…) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.

Relative stabilities and the spectral signatures of stacked and hydrogen-bonded dimers of serotonin

NASA Astrophysics Data System (ADS)

Dev, S.; Giri, K.; Majumder, M.; Sathyamurthy, N.

2015-10-01

The O-HṡṡṡN hydrogen-bonded dimer of serotonin is shown to be more stable than the stacked dimer in its ground electronic state, by using the Møller-Plesset second-order perturbation theory (MP2) and the 6-31g** basis set. The vertical excitation energy for the lowest π → π* transition for the monomer as well as the dimer is predicted by time-dependent density functional theory. The experimentally observed red shift of excitation wavelength on oligomerisation is explained in terms of the change in the HOMO-LUMO energy gap due to complex formation. The impact of dimer formation on the proton magnetic resonance spectrum of serotonin monomer is also examined.

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Fritze, S.; Drechsel, P.; Stauss, P.; Rode, P.; Markurt, T.; Schulz, T.; Albrecht, M.; Bläsing, J.; Dadgar, A.; Krost, A.

2012-06-01

Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type dislocations as concluded from x-ray diffraction (XRD) measurements. Beyond an interlayer thickness of 28 nm plastic substrate deformation occurs. For a thick GaN stack, the first two interlayers serve as strain engineering layers to obtain a crack-free GaN structure, while a third strongly reduces the XRD ω-(0002)-FWHM. The vertical strain and quality profile determined by several XRD methods demonstrates the individual impact of each interlayer.

Test stand for Titan 34D SRM static firing

NASA Technical Reports Server (NTRS)

Glozman, Vladimir; Shipway, George

1988-01-01

An existing liquid engine test stand at the AF Astronautics Laboratory was refurbished and extensively modified to accommodate the static firing of the Titan 34D solid rocket motor (SRM) in the vertical nozzle down orientation. The main load restraint structure was designed and built to secure the SRM from lifting off during the firing. In addition, the structure provided weather protection, temperature conditioning of the SRM, and positioning of the measurement and recording equipment. The structure was also used for stacking/de-stacking of SRM segments and other technological processes. The existing stand, its foundation and anchorage were thoroughly examined and reanalyzed. Necessary stand modifications were carried out to comply with the requirements of the Titan 34D SRM static firing.

Development of an active isolation mat based on dielectric elastomer stack actuators for mechanical vibration cancellation

NASA Astrophysics Data System (ADS)

Karsten, Roman; Flittner, Klaus; Haus, Henry; Schlaak, Helmut F.

2013-04-01

This paper describes the development of an active isolation mat for cancelation of vibrations on sensitive devices with a mass of up to 500 gram. Vertical disturbing vibrations are attenuated actively while horizontal vibrations are damped passively. The dimensions of the investigated mat are 140 × 140 × 20 mm. The mat contains 5 dielectric elastomer stack actuators (DESA). The design and the optimization of active isolation mat are realized by ANSYS FEM software. The best performance shows a DESA with air cushion mounted on its circumference. Within the mounting encased air increases static and reduces dynamic stiffness. Experimental results show that vibrations with amplitudes up to 200 μm can be actively eliminated.

Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

NASA Astrophysics Data System (ADS)

Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

2018-01-01

To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

Stacked Quantum Wire AlN/GaN HEMTs

DTIC Science & Technology

2012-04-27

Zimmermann, Debdeep Jena and Huili Xing. Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors. International Conference on...mobility transistors with regrown ohmic contacts by molecular beam epitaxy . Physica Status Solidi (a), 208(7), 1617-1619, (2011). [9] Debdeep Jena...high Si doping concentrations grown by molecular beam epitaxy . Submitted, (2012). [14] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly

Quantum friction in arbitrarily directed motion

DOE PAGES

Klatt, J.; Farías, M. Belen; Dalvit, D. A. R.; ...

2017-05-30

In quantum friction, the electromagnetic fluctuation-induced frictional force decelerating an atom which moves past a macroscopic dielectric body, has so far eluded experimental evidence despite more than three decades of theoretical studies. Inspired by the recent finding that dynamical corrections to such an atom's internal dynamics are enhanced by one order of magnitude for vertical motion—compared with the paradigmatic setup of parallel motion—here we generalize quantum friction calculations to arbitrary angles between the atom's direction of motion and the surface in front of which it moves. Motivated by the disagreement between quantum friction calculations based on Markovian quantum master equationsmore » and time-dependent perturbation theory, we carry out our derivations of the quantum frictional force for arbitrary angles by employing both methods and compare them.« less

Shear-wave reflection imaging using a MEMS-based 3C landstreamer and a vertical impact source - an esker study in SW Finland

NASA Astrophysics Data System (ADS)

Brodic, Bojan; Malehmir, Alireza; Maries, Georgiana; Ahokangas, Elina; Mäkinen, Joni; Pasanen, Antti

2017-04-01

Higher resolution of S-wave seismic data compared to the P-wave ones are attractive for the researches working with the seismic methods. This is particularly true for near-surface applications due to significantly lower shear-wave velocities of unconsolidated sediments. Shear-wave imaging, however, poses certain restrictions on both source and receiver selections and also processing strategies. With three component (3C) seismic receivers becoming more affordable and used, shear-wave imaging from vertical sources is attracting more attention for near-surface applications. Theoretically, a vertical impact source will always excite both P- and S-waves although the excited S-waves are radially polarized (SV). There is an exchange of seismic energy between the vertical and radial component of the seismic wavefield. Additionally, it is theoretically accepted that there is no energy conversion or exchange from vertical into the transverse (or SH) component of the seismic wavefield, and the SH-waves can only be generated using SH sources. With the objectives of imaging esker structure (glacial sediments), water table and depth to bedrock, we conducted a seismic survey in Virttaankangas, in southwestern Finland. A bobcat-mounted vertical drop hammer (500 kg) was used as the seismic source. To obtain better source coupling, a 75×75×1.5 cm steel plate was mounted at the bottom of the hammer casing and all the hits made on this plate after placing it firmly on the ground at every shot point. For the data recording, we used a state-of-the-art comprising of 100 units, 240 m-long, 3C MEMS (micro electro-mechanical system) based seismic landstreamer developed at Uppsala University. Although the focus of the study was on the vertical component data, careful inspection of the transverse (SH) component of the raw data revealed clear shear wave reflections (normal moveout velocities ranging from 280-350 m/s at 50 m depth) on several shot gathers. This indicated potential for their analysis, hence shear-wave reflection imaging was carried out. Results show an excellent correspondence between the drilled depth to bedrock and the one independently obtained using P-wave first arrivals traveltime tomography with a reflection imaged on the stacked section of the SH component data. Aside from this reflection that follows the undulating bedrock topography, additional reflections are also observed on the stacked section that might be related to the sedimentary structures at the site. The section shows much finer resolution compared to the P-wave stacked section processed independently and reported earlier this year. This study illustrates the importance of 3C data recording and shows the potential of the landstreamer in imaging shallow subsurface using both P- and SH-waves generated from a vertical impact source. Whether the strong SH-wave energy observed is generated immediately at the source-ground contact, possible sliding of the base plate on which the impacts were made, an effect of near-surface heterogeneities or other factors remains to be carefully investigated. Acknowledgments: A contribution from Trust 2.2 project (http://trust-geoinfra.se) sponsored by Formas, BeFo, SBUF, SGU, Skanska, Tyréns, FQM, and NGI. We thank Turku Water Company, GTK and University of Turku, Department of Geography and Geology for supporting the data acquisition.

A Study of Vertical Transport through Graphene toward Control of Quantum Tunneling.

PubMed

Zhu, Xiaodan; Lei, Sidong; Tsai, Shin-Hung; Zhang, Xiang; Liu, Jun; Yin, Gen; Tang, Min; Torres, Carlos M; Navabi, Aryan; Jin, Zehua; Tsai, Shiao-Po; Qasem, Hussam; Wang, Yong; Vajtai, Robert; Lake, Roger K; Ajayan, Pulickel M; Wang, Kang L

2018-02-14

Vertical integration of van der Waals (vdW) materials with atomic precision is an intriguing possibility brought forward by these two-dimensional (2D) materials. Essential to the design and analysis of these structures is a fundamental understanding of the vertical transport of charge carriers into and across vdW materials, yet little has been done in this area. In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although a semimetal in the lateral lattice plane, graphene together with the vdW gap act as a tunneling barrier that is nearly transparent to the vertically tunneling electrons due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet can control the carrier flux via the electrical potential. A new model on the quantum capacitance's effect on vertical tunneling is developed to further elucidate the role of graphene in modulating the tunneling process. This work may serve as a general guideline for the design and analysis of vdW vertical tunneling devices and heterostructures, as well as the study of electron/spin injection through and into vdW materials.

Formation of temperature front in stably stratified turbulence

NASA Astrophysics Data System (ADS)

Kimura, Yoshifumi; Sullivan, Peter; Herring, Jackson

2016-11-01

An important feature of stably stratified turbulence is the significant influence of internal gravity waves which makes stably stratified turbulence unique compared to homogeneous isotropic turbulence. In this paper, we investigate the genesis of temperature fronts-a crucial subject both practically and fundamentally-in stably stratified turbulence using Direct Numerical Simulations (DNS) of the Navier-Stokes equation under the Boussinesq approximation with 10243 grid points. Vertical profiles of temperature fluctuations show almost vertically periodic sawtooth wavy structures with negative and positive layers stacked together with clear boundaries implying a sharp temperature fronts. The sawtooth waves consist of gradual decreasing temperature fluctuations with rapid recovery to a positive value as the frontal boundary is crossed vertically. This asymmetry of gradients comes from the structure that warm temperature region lies on top of cool temperature region, and can be verified in the skewed probability density function (PDF) of vertical temperature gradient. We try to extract the flow structures and mechanism for the formation and maintenance of the strong temperature front numerically.

Compact ultra-fast vertical nanopositioner for improving scanning probe microscope scan speed

NASA Astrophysics Data System (ADS)

Kenton, Brian J.; Fleming, Andrew J.; Leang, Kam K.

2011-12-01

The mechanical design of a high-bandwidth, short-range vertical positioning stage is described for integration with a commercial scanning probe microscope (SPM) for dual-stage actuation to significantly improve scanning performance. The vertical motion of the sample platform is driven by a stiff and compact piezo-stack actuator and guided by a novel circular flexure to minimize undesirable mechanical resonances that can limit the performance of the vertical feedback control loop. Finite element analysis is performed to study the key issues that affect performance. To relax the need for properly securing the stage to a working surface, such as a laboratory workbench, an inertial cancellation scheme is utilized. The measured dominant unloaded mechanical resonance of a prototype stage is above 150 kHz and the travel range is approximately 1.56 μm. The high-bandwidth stage is experimentally evaluated with a basic commercial SPM, and results show over 25-times improvement in the scanning performance.

Vertical feed stick wood fuel burning furnace system

DOEpatents

Hill, Richard C.

1984-01-01

A new and improved stove or furnace for efficient combustion of wood fuel including a vertical feed combustion chamber for receiving and supporting wood fuel in a vertical attitude or stack, a major upper portion of the combustion chamber column comprising a water jacket for coupling to a source of water or heat transfer fluid and for convection circulation of the fluid for confining the locus of wood fuel combustion to the bottom of the vertical gravity feed combustion chamber. A flue gas propagation delay channel extending from the laterally directed draft outlet affords delayed travel time in a high temperature environment to assure substantially complete combustion of the gaseous products of wood burning with forced air as an actively induced draft draws the fuel gas and air mixture laterally through the combustion and high temperature zone. Active sources of forced air and induced draft are included, multiple use and circuit couplings for the recovered heat, and construction features in the refractory material substructure and metal component superstructure.

Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons

PubMed Central

Yao, Yung-Chi; Hwang, Jung-Min; Yang, Zu-Po; Haung, Jing-Yu; Lin, Chia-Ching; Shen, Wei-Chen; Chou, Chun-Yang; Wang, Mei-Tan; Huang, Chun-Ying; Chen, Ching-Yu; Tsai, Meng-Tsan; Lin, Tzu-Neng; Shen, Ji-Lin; Lee, Ya-Ju

2016-01-01

Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP. PMID:26935648

Exclusivity structures and graph representatives of local complementation orbits

NASA Astrophysics Data System (ADS)

Cabello, Adán; Parker, Matthew G.; Scarpa, Giannicola; Severini, Simone

2013-07-01

We describe a construction that maps any connected graph G on three or more vertices into a larger graph, H(G), whose independence number is strictly smaller than its Lovász number which is equal to its fractional packing number. The vertices of H(G) represent all possible events consistent with the stabilizer group of the graph state associated with G, and exclusive events are adjacent. Mathematically, the graph H(G) corresponds to the orbit of G under local complementation. Physically, the construction translates into graph-theoretic terms the connection between a graph state and a Bell inequality maximally violated by quantum mechanics. In the context of zero-error information theory, the construction suggests a protocol achieving the maximum rate of entanglement-assisted capacity, a quantum mechanical analogue of the Shannon capacity, for each H(G). The violation of the Bell inequality is expressed by the one-shot version of this capacity being strictly larger than the independence number. Finally, given the correspondence between graphs and exclusivity structures, we are able to compute the independence number for certain infinite families of graphs with the use of quantum non-locality, therefore highlighting an application of quantum theory in the proof of a purely combinatorial statement.

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-x Bi x /GaAs quantum wells

NASA Astrophysics Data System (ADS)

Luna, E.; Wu, M.; Hanke, M.; Puustinen, J.; Guina, M.; Trampert, A.

2016-08-01

In this work, we report on the spontaneous formation of ordered arrays of nanometer-sized Bi-rich structures due to lateral composition modulations in Ga(As,Bi)/GaAs quantum wells grown by molecular beam epitaxy. The overall microstructure and chemical distribution is investigated using transmission electron microscopy. The information is complemented by synchrotron x-ray grazing incidence diffraction, which provides insight into the in-plane arrangement. Due to the vertical inheritance of the lateral modulation, the Bi-rich nanostructures eventually shape into a three-dimensional assembly. Whereas the Bi-rich nanostructures are created via two-dimensional phase separation at the growing surface, our results suggest that the process is assisted by Bi segregation which is demonstrated to be strong and more complex than expected, implying both lateral and vertical (surface segregation) mass transport. As demonstrated here, the inherent thermodynamic miscibility gap of Ga(As,Bi) alloys can be exploited to create highly uniform Bi-rich units embedded in a quantum confinement structure.

Strain-induced vertical self-organization of semiconductor quantum dots: A computational study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shtinkov, N., E-mail: nshtinkov@uottawa.ca

Atomistic strain simulations based on the valence force field method are employed to study the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the QD shape, dimensions, and materials parameters are systematically investigated, varying independently the following parameters: spacer width H, QD lateral spacing D, base b, and height h, slope of the side facets, elastic properties of the dot and the substrate materials, and lattice mismatch between the dot and the substrate. The transition between vertically aligned and anti-aligned structures is found to be determined mainly by the ratios H/D and b/D, as well as bymore » the strain anisotropy of the substrate and to a lesser extent of the QD. The dependence on the QD height h is significant only for steep side facets and large aspect ratios h/b, and the effects of the lattice mismatch strain and the bulk elastic moduli are found to be negligible. The comparison with experimental data shows an excellent agreement with the results from the simulations, demonstrating that the presented analysis results in precise theoretical predictions for the vertical self-organization regime in a wide range of QD materials systems.« less

Infrared light sources with semimetal electron injection

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Allerman, Andrew A.

1999-01-01

An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.

Intermixing of InP-based quantum dots and application to micro-ring resonator wavelength-selective filter for photonic integrated devices

NASA Astrophysics Data System (ADS)

Matsumoto, Atsushi; Matsushita, Asuka; Takei, Yuki; Akahane, Kouichi; Matsushima, Yuichi; Ishikawa, Hiroshi; Utaka, Katsuyuki

2014-09-01

In this study, we investigated quantum dot intermixing (QDI) for InAs/InGaAlAs highly stacked QDs on an InP(311)B substrate with low-temperature annealing at 650 °C in order to realize integrated photonic devices with QDs and passive waveguides. In particular, we adopted the method of introducing point defects by ICP-RIE to realize a blue shift of the PL peak wavelength by about 150 nm. Moreover, we successfully fabricated double micro-ring resonators by QDI. The output power contrasts of the devices were found to be 9.0 and 8.6 dB for TE and TM modes, respectively.

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freytag, Stefan, E-mail: stefan.freytag@ovgu.de; Feneberg, Martin; Berger, Christoph

2016-07-07

In{sub x}Ga{sub 1–x}N/GaN single and multi quantum well (MQW) structures with x ≈ 0.13 were investigated optically by photoreflectance, photoluminescence excitation spectroscopy, and luminescence. Clear evidence of unintentional indium incorporation into the nominal GaN barrier layers is found. The unintentional In content is found to be around 3%. Inhomogeneous distribution of In atoms occurs within the distinct quantum well (QW) layers, which is commonly described as statistical alloy fluctuation and leads to the characteristic S-shape temperature shift of emission energy. Furthermore, differences in emission energy between the first and the other QWs of a MQW stack are found experimentally. Thismore » effect is discussed with the help of model calculations and is assigned to differences in the confining potential due to unwanted indium incorporation for the upper QWs.« less

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

NASA Astrophysics Data System (ADS)

Monavarian, Morteza; Hafiz, Shopan; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

2016-02-01

Heteroepitaxial semipolar and nonpolar GaN layers often suffer from high densities of extended defects including basal plane stacking faults (BSFs). BSFs which are considered as inclusions of cubic zinc-blende phase in wurtzite matrix act as quantum wells strongly affecting device performance. Band alignment in BSFs has been discussed as type of band alignment at the wurtzite/zinc blende interface governs the response in differential transmission; fast decay after the pulse followed by slow recovery due to spatial splitting of electrons and heavy holes for type- II band alignment in contrast to decay with no recovery in case of type I band alignment. Based on the results, band alignment is demonstrated to be of type II in zinc-blende segments in wurtzite matrix as in BSFs.

Bottom-up Fabrication of Multilayer Stacks of 3D Photonic Crystals from Titanium Dioxide.

PubMed

Kubrin, Roman; Pasquarelli, Robert M; Waleczek, Martin; Lee, Hooi Sing; Zierold, Robert; do Rosário, Jefferson J; Dyachenko, Pavel N; Montero Moreno, Josep M; Petrov, Alexander Yu; Janssen, Rolf; Eich, Manfred; Nielsch, Kornelius; Schneider, Gerold A

2016-04-27

A strategy for stacking multiple ceramic 3D photonic crystals is developed. Periodically structured porous films are produced by vertical convective self-assembly of polystyrene (PS) microspheres. After infiltration of the opaline templates by atomic layer deposition (ALD) of titania and thermal decomposition of the polystyrene matrix, a ceramic 3D photonic crystal is formed. Further layers with different sizes of pores are deposited subsequently by repetition of the process. The influence of process parameters on morphology and photonic properties of double and triple stacks is systematically studied. Prolonged contact of amorphous titania films with warm water during self-assembly of the successive templates is found to result in exaggerated roughness of the surfaces re-exposed to ALD. Random scattering on rough internal surfaces disrupts ballistic transport of incident photons into deeper layers of the multistacks. Substantially smoother interfaces are obtained by calcination of the structure after each infiltration, which converts amorphous titania into the crystalline anatase before resuming the ALD infiltration. High quality triple stacks consisting of anatase inverse opals with different pore sizes are demonstrated for the first time. The elaborated fabrication method shows promise for various applications demanding broadband dielectric reflectors or titania photonic crystals with a long mean free path of photons.

Nanoscale solid-state quantum computing

NASA Astrophysics Data System (ADS)

Ardavan, A.; Austwick, M.; Benjamin, S.C.; Briggs, G.A.D.; Dennis, T.J.S.; Ferguson, A.; Hasko, D.G.; Kanai, M.; Khlobystov, A.N.; Lovett, B.W.; Morley, G.W.; Oliver, R.A.; Pettifor, D.G.; Porfyrakis, K.; Reina, J.H.; Rice, J.H.; Smith, J.D.; Taylor, R.A.; Williams, D.A.; Adelmann, C.; Mariette, H.; Hamers, R.J.

2003-07-01

Most experts agree that it is too early to say how quantum computers will eventually be built, and several nanoscale solid-state schemes are being implemented in a range of materials. Nanofabricated quantum dots can be made in designer configurations, with established technology for controlling interactions and for reading out results. Epitaxial quantum dots can be grown in vertical arrays in semiconductors, and ultrafast optical techniques are available for controlling and measuring their excitations. Single-walled carbon nanotubes can be used for molecular self-assembly of endohedral fullerenes, which can embody quantum information in the electron spin. The challenges of individual addressing in such tiny structures could rapidly become intractable with increasing numbers of qubits, but these schemes are amenable to global addressing methods for computation.

Neutronic reactor

DOEpatents

Lewis, Warren R.

1978-05-30

A graphite-moderated, water-cooled nuclear reactor including a plurality of rectangular graphite blocks stacked in abutting relationship in layers, alternate layers having axes which are normal to one another, alternate rows of blocks in alternate layers being provided with a channel extending through the blocks, said channeled blocks being provided with concave sides and having smaller vertical dimensions than adjacent blocks in the same layer, there being nuclear fuel in the channels.

GOES-R Atlas V Centaur Lift and Mate

NASA Image and Video Library

2016-10-31

Operations are underway to stack the United Launch Alliance Atlas V Centaur second stage onto the first stage in the Vertical Integration Facility at Space Launch Complex 41 at Cape Canaveral Air Force Station in Florida. The Geostationary Operational Environmental Satellite (GOES-R) will launch aboard the Atlas V rocket in November. GOES-R is the first satellite in a series of next-generation NOAA GOES Satellites.

Immersion Cooling of Electronics in DoD Installations

DTIC Science & Technology

2016-05-01

2012). Bitcoin Mining Electronics Cooling Development In January 2013, inventor/consultant Mark Miyoshi began development of a two-phase cooling...system using Novec 649 to be used for cooling bitcoin mining hardware. After a short trial period, hardware power supply and logic-board failures...are reports of bitcoin mining companies vertically stacking two-phase immersion baths to improve the floor space density, but this approach is likely

Clustering on Magnesium Surfaces – Formation and Diffusion Energies

DOE PAGES

Chu, Haijian; Huang, Hanchen; Wang, Jian

2017-07-12

The formation and diffusion energies of atomic clusters on Mg surfaces determine the surface roughness and formation of faulted structure, which in turn affect the mechanical deformation of Mg. This paper reports first principles density function theory (DFT) based quantum mechanics calculation results of atomic clustering on the low energy surfaces {0001} and {more » $$\\bar{1}$$011} . In parallel, molecular statics calculations serve to test the validity of two interatomic potentials and to extend the scope of the DFT studies. On a {0001} surface, a compact cluster consisting of few than three atoms energetically prefers a face-centered-cubic stacking, to serve as a nucleus of stacking fault. On a {$$\\bar{1}$$011} , clusters of any size always prefer hexagonal-close-packed stacking. Adatom diffusion on surface {$$\\bar{1}$$011} is high anisotropic while isotropic on surface (0001). Three-dimensional Ehrlich–Schwoebel barriers converge as the step height is three atomic layers or thicker. FInally, adatom diffusion along steps is via hopping mechanism, and that down steps is via exchange mechanism.« less

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods.

PubMed

Forsberg, Mathias; Serban, Elena Alexandra; Hsiao, Ching-Lien; Junaid, Muhammad; Birch, Jens; Pozina, Galia

2017-04-26

Novel hybrid organic-inorganic nanostructures fabricated to utilize non-radiative resonant energy transfer mechanism are considered to be extremely attractive for a variety of light emitters for down converting of ultaviolet light and for photovoltaic applications since they can be much more efficient compared to devices grown with common design. Organic-inorganic hybrid structures based on green polyfluorene (F8BT) and GaN (0001) nanorods grown by magnetron sputtering on Si (111) substrates are studied. In such nanorods, stacking faults can form periodic polymorphic quantum wells characterized by bright luminescence. In difference to GaN exciton emission, the recombination rate for the stacking fault related emission increases in the presence of polyfluorene film, which can be understood in terms of Förster interaction mechanism. From comparison of dynamic properties of the stacking fault related luminescence in the hybrid structures and in the bare GaN nanorods, the pumping efficiency of non-radiative resonant energy transfer in hybrids was estimated to be as high as 35% at low temperatures.

Clustering on Magnesium Surfaces – Formation and Diffusion Energies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Haijian; Huang, Hanchen; Wang, Jian

The formation and diffusion energies of atomic clusters on Mg surfaces determine the surface roughness and formation of faulted structure, which in turn affect the mechanical deformation of Mg. This paper reports first principles density function theory (DFT) based quantum mechanics calculation results of atomic clustering on the low energy surfaces {0001} and {more » $$\\bar{1}$$011} . In parallel, molecular statics calculations serve to test the validity of two interatomic potentials and to extend the scope of the DFT studies. On a {0001} surface, a compact cluster consisting of few than three atoms energetically prefers a face-centered-cubic stacking, to serve as a nucleus of stacking fault. On a {$$\\bar{1}$$011} , clusters of any size always prefer hexagonal-close-packed stacking. Adatom diffusion on surface {$$\\bar{1}$$011} is high anisotropic while isotropic on surface (0001). Three-dimensional Ehrlich–Schwoebel barriers converge as the step height is three atomic layers or thicker. FInally, adatom diffusion along steps is via hopping mechanism, and that down steps is via exchange mechanism.« less

Direct nanoscale imaging of evolving electric field domains in quantum structures.

PubMed

Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

2014-11-28

The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary--the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region.

Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures

PubMed Central

Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

2014-01-01

The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary – the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region. PMID:25431158

Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures

NASA Astrophysics Data System (ADS)

Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

2014-11-01

The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary - the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region.

Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V.; Dang, Cuong

The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

PubMed

Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2016-03-09

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

Stereological analysis of gravitropism in protonemata of the moss Ceratodon

NASA Technical Reports Server (NTRS)

Walker, L. M.; Sack, F. D.

1997-01-01

Apical cells of dark-grown protonemata of the moss Cerotodon purpureus are negatively gravitropic. Previous light microscopy has shown that reorientation to the horizontal induces amyloplast sedimentation and redistribution of microtubules. To determine whether other components become redistributed laterally or axially, the apical 35 micrometers of both vertical and horizontal apical cells were compared stereologically using transmission electron microscopy. Reorientation to the horizontal changed the longitudinal distributions of tubular ER, Golgi stacks, and vesicles but not cisternal ER, mitochondria, and plastids. Only plastids showed a statistically significant lateral redistribution after horizontal placement. Qualitative examination of the sedimentation zone showed plastids sedimented close to peripherally located ER with vacuoles displaced above plastids. These results argue against a model where differential tip growth results from a redistribution of Golgi stacks or exocytic vesicles.

Space Shuttle Projects

NASA Image and Video Library

1978-09-01

This photograph shows stacking of the left side of the solid rocket booster (SRB) segments in the Dynamic Test Stand at the east test area of the Marshall Space Flight Center (MSFC). Staging shown here are the aft skirt, aft segment, and aft center segment. The SRB was attached to the external tank (ET) and then the orbiter later for the Mated Vertical Ground Vibration Test (MVGVT), that resumed in October 1978. The stacking of a complete Shuttle in the Dynamic Test Stand allowed test engineers to perform ground vibration testing on the Shuttle in its liftoff configuration. The purpose of the MVGVT is to verify that the Space Shuttle would perform as predicted during launch. The platforms inside the Dynamic Test Stand were modified to accommodate two SRB's to which the ET was attached.

Space Shuttle Projects

NASA Image and Video Library

1978-09-01

Workmen in the Dynamic Test Stand lowered the nose cone into place to complete stacking of the left side of the solid rocket booster (SRB) in the Dynamic Test Stand at the east test area of the Marshall Space Flight Center (MSFC). The SRB would be attached to the external tank (ET) and then the orbiter later for the Mated Vertical Ground Vibration Test (MVGVT), that resumed in October 1978. The stacking of a complete Shuttle in the Dynamic Test Stand allowed test engineers to perform ground vibration testing on the Shuttle in its liftoff configuration. The purpose of the MVGVT was to verify that the Space Shuttle would perform as predicted during launch. The platforms inside the Dynamic Test Stand were modified to accommodate two SRB'S to which the ET was attached.

Photopumped infrared vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Hadji, E.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

1996-04-01

The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy. The top mirror is a 7-period YF3/ZnS dielectric stack. The cavity quality factor is Q=350. This heterostructure VCSEL operates at 3.06 μm with a measured power density threshold of 45 kW/cm2 at 10 K.

Application of Diffusion Monte Carlo to Materials Dominated by van der Waals Interactions

DOE PAGES

Benali, Anouar; Shulenburger, Luke; Romero, Nichols A.; ...

2014-06-12

Van der Waals forces are notoriously difficult to account for from first principles. We perform extensive calculation to assess the usefulness and validity of diffusion quantum Monte Carlo when applied to van der Waals forces. We present results for noble gas solids and clusters - archetypical van der Waals dominated assemblies, as well as a relevant pi-pi stacking supramolecular complex: DNA + intercalating anti-cancer drug Ellipticine.

Tuning of the emission color of organic light emitting diodes via smartly designed aluminum plasmonics

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim; List-Kratochvil, Emil J. W.

2017-02-01

With the invention of phosphorescent emitter material, organic light emitting diodes with internal quantum yields of up to 100% can be realized. Still, the extraction of the light from the OLED stack is a bottleneck, which hampers the availability of OLEDs with large external quantum efficiencies. In this contribution, we highlight the advantages of integrating aluminum nanodisc arrays into the OLED stack. By this, not only the out-coupling of light can be enhanced, but also the emission color can be tailored and controlled. By means of extinction- and fluorescence spectroscopy measurements we are able to show how the sharp features observed in the extinction measurements correlate with a very selective fluorescence enhancement of the organic emitter materials used in these studies. At the same time, localized surface plasmon resonances of the individual nanodiscs further modify the emission spectrum, e.g., by filtering the green emission tail. A combination of these factors leads to a modification of the emission color in between CIE1931 (x,y) chromaticity coordinates of (0.149, 0.225) and (0.152, 0.352). After accounting for the sensitivity of the human eye, we are able to demonstrate that this adjustment of the chromaticity coordinates goes is accompanied by an increase in device efficiency.

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors †

PubMed Central

Georgitzikis, Epimitheas; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-01-01

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III–V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10−6 A/cm2 at −2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors. PMID:29232871

High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode

NASA Astrophysics Data System (ADS)

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2016-12-01

Solution processed photoactive PbS quantum dots (QDs) were used as channel in high-performance near-infrared vertical field-effect phototransistor (VFEpT) where monolayer graphene embedded as transparent electrode. In this vertical architecture, the PbS QD channel was sandwiched and naturally protected between the drain and source electrodes, which made the device ultrashort channel length (110 nm) simply the thickness of the channel layer. The VFEpT exhibited ambipolar operation with high mobilities of μe = 3.5 cm2/V s in n-channel operation and μh = 3.3 cm2/V s in p-channel operation at low operation voltages. By using the photoactive PbS QDs as channel material, the VFEpT exhibited good photoresponse properties with a responsivity of 4.2 × 102 A/W, an external quantum efficiency of 6.4 × 104% and a photodetectivity of 2.1 × 109 Jones at the light irradiance of 36 mW/cm2. Additionally, the VFEpT showed excellent on/off switching with good stability and reproducibility and fast response speed with a short rise time of 12 ms in n-channel operation and 10.6 ms in p-channel operation. These high mobilities, good photoresponse properties and simplistic fabrication of our VFEpTs provided a facile route to the high-performance inorganic photodetectors.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

High-Performance Vertical Organic Electrochemical Transistors.

PubMed

Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

2018-02-01

Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

Generator module architecture for a large solid oxide fuel cell power plant

DOEpatents

Gillett, James E.; Zafred, Paolo R.; Riggle, Matthew W.; Litzinger, Kevin P.

2013-06-11

A solid oxide fuel cell module contains a plurality of integral bundle assemblies, the module containing a top portion with an inlet fuel plenum and a bottom portion receiving air inlet feed and containing a base support, the base supports dense, ceramic exhaust manifolds which are below and connect to air feed tubes located in a recuperator zone, the air feed tubes passing into the center of inverted, tubular, elongated, hollow electrically connected solid oxide fuel cells having an open end above a combustion zone into which the air feed tubes pass and a closed end near the inlet fuel plenum, where the fuel cells comprise a fuel cell stack bundle all surrounded within an outer module enclosure having top power leads to provide electrical output from the stack bundle, where the fuel cells operate in the fuel cell mode and where the base support and bottom ceramic air exhaust manifolds carry from 85% to all 100% of the weight of the stack, and each bundle assembly has its own control for vertical and horizontal thermal expansion control.

Physical approach to quantum networks with massive particles

NASA Astrophysics Data System (ADS)

Andersen, Molte Emil Strange; Zinner, Nikolaj Thomas

2018-04-01

Assembling large-scale quantum networks is a key goal of modern physics research with applications in quantum information and computation. Quantum wires and waveguides in which massive particles propagate in tailored confinement is one promising platform for realizing a quantum network. In the literature, such networks are often treated as quantum graphs, that is, the wave functions are taken to live on graphs of one-dimensional edges meeting in vertices. Hitherto, it has been unclear what boundary conditions on the vertices produce the physical states one finds in nature. This paper treats a quantum network from a physical approach, explicitly finds the physical eigenstates and compares them to the quantum-graph description. The basic building block of a quantum network is an X-shaped potential well made by crossing two quantum wires, and we consider a massive particle in such an X well. The system is analyzed using a variational method based on an expansion into modes with fast convergence and it provides a very clear intuition for the physics of the problem. The particle is found to have a ground state that is exponentially localized to the center of the X well, and the other symmetric solutions are formed so to be orthogonal to the ground state. This is in contrast to the predictions of the conventionally used so-called Kirchoff boundary conditions in quantum graph theory that predict a different sequence of symmetric solutions that cannot be physically realized. Numerical methods have previously been the only source of information on the ground-state wave function and our results provide a different perspective with strong analytical insights. The ground-state wave function has a spatial profile that looks very similar to the shape of a solitonic solution to a nonlinear Schrödinger equation, enabling an analytical prediction of the wave number. When combining multiple X wells into a network or grid, each site supports a solitonlike localized state. These localized solutions only couple to each other and are able to jump from one site to another as if they were trapped in a discrete lattice.

Persistent photoconductivity in two-dimensional Mo 1-xW xSe 2–MoSe 2 van der Waals heterojunctions

DOE PAGES

Puretzky, Alexander A.; Basile, Leonardo; Idrobo, Juan Carlos; ...

2016-02-16

Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe 2 and p-type Mo 1-xW xSe 2–MoSe 2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers andmore » the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.« less

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-11-05

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

PubMed Central

Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

2013-01-01

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

Metamorphic quantum dots: Quite different nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Frigeri, P.; Nasi, L.

In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantummore » dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.« less

Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires

NASA Astrophysics Data System (ADS)

Ferdous, F.; Haque, A.

2007-05-01

The effect of redistribution of elastic strain relaxation on the energy band structures of GaInAsP/InP compressively strained membrane quantum wires fabricated by electron-beam lithography, reactive-ion etching and two-step epitaxial growth is theoretically studied using an 8-band k ṡp method. Anisotropic strain analysis by the finite element method shows that due to etching away the top and the bottom InP clad layers in membrane structures, redistribution of strain occurs. It is found that strain redistribution increases the effective bandgap of membrane quantum wire structures causing a blueshift of the emission frequency. Comparison with effective bandgap calculations neglecting confinement and band mixing demonstrates that neglect of these effects leads to an overestimation of the change in the bandgap. We have also investigated the effect of variation of wire width, barrier strain compensation, number of stacked quantum wire layers, and thickness of the top and the bottom residual InP layers in membrane structures on the change in the effective bandgap of membrane structures.

Efficient Blue Electroluminescence Using Quantum-Confined Two-Dimensional Perovskites.

PubMed

Kumar, Sudhir; Jagielski, Jakub; Yakunin, Sergii; Rice, Peter; Chiu, Yu-Cheng; Wang, Mingchao; Nedelcu, Georgian; Kim, Yeongin; Lin, Shangchao; Santos, Elton J G; Kovalenko, Maksym V; Shih, Chih-Jen

2016-10-03

Solution-processed hybrid organic-inorganic lead halide perovskites are emerging as one of the most promising candidates for low-cost light-emitting diodes (LEDs). However, due to a small exciton binding energy, it is not yet possible to achieve an efficient electroluminescence within the blue wavelength region at room temperature, as is necessary for full-spectrum light sources. Here, we demonstrate efficient blue LEDs based on the colloidal, quantum-confined 2D perovskites, with precisely controlled stacking down to one-unit-cell thickness (n = 1). A variety of low-k organic host compounds are used to disperse the 2D perovskites, effectively creating a matrix of the dielectric quantum wells, which significantly boosts the exciton binding energy by the dielectric confinement effect. Through the Förster resonance energy transfer, the excitons down-convert and recombine radiatively in the 2D perovskites. We report room-temperature pure green (n = 7-10), sky blue (n = 5), pure blue (n = 3), and deep blue (n = 1) electroluminescence, with record-high external quantum efficiencies in the green-to-blue wavelength region.

Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

PubMed

Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

2007-06-01

We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org; Brown, E. R.

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

PubMed

Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

2016-01-11

Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

Progress and issues for high-speed vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Lear, Kevin L.; Al-Omari, Ahmad N.

2007-02-01

Extrinsic electrical, thermal, and optical issues rather than intrinsic factors currently constrain the maximum bandwidth of directly modulated vertical cavity surface emitting lasers (VCSELs). Intrinsic limits based on resonance frequency, damping, and K-factor analysis are summarized. Previous reports are used to compare parasitic circuit values and electrical 3dB bandwidths and thermal resistances. A correlation between multimode operation and junction heating with bandwidth saturation is presented. The extrinsic factors motivate modified bottom-emitting structures with no electrical pads, small mesas, copper plated heatsinks, and uniform current injection. Selected results on high speed quantum well and quantum dot VCSELs at 850 nm, 980 nm, and 1070 nm are reviewed including small-signal 3dB frequencies up to 21.5 GHz and bit rates up to 30 Gb/s.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Role of Urea-Aromatic Stacking Interactions in Stabilizing the Aromatic Residues of the Protein in Urea-Induced Denatured State.

PubMed

Goyal, Siddharth; Chattopadhyay, Aditya; Kasavajhala, Koushik; Priyakumar, U Deva

2017-10-25

A delicate balance of different types of intramolecular interactions makes the folded states of proteins marginally more stable than the unfolded states. Experiments use thermal, chemical, or mechanical stress to perturb the folding equilibrium for examining protein stability and the protein folding process. Elucidation of the mechanism by which chemical denaturants unfold proteins is crucial; this study explores the nature of urea-aromatic interactions relevant in urea-assisted protein denaturation. Free energy profiles corresponding to the unfolding of Trp-cage miniprotein in the presence and absence of urea at three different temperatures demonstrate the distortion of the hydrophobic core to be a crucial step. Exposure of the Trp6 residue to the solvent is found to be favored in the presence of urea. Previous experiments showed that urea has a high affinity for aromatic groups of proteins. We show here that this is due to the remarkable ability of urea to form stacking and NH-π interactions with aromatic groups of proteins. Urea-nucleobase stacking interactions have been shown to be crucial in urea-assisted RNA unfolding. Examination of these interactions using microsecond-long unrestrained simulations shows that urea-aromatic stacking interactions are stabilizing and long lasting. Further MD simulations, thermodynamic integration, and quantum mechanical calculations on aromatic model systems reveal that such interactions are possible for all the aromatic amino acid side-chains. Finally, we validate the ubiquitous nature of urea-aromatic stacking interactions by analyzing experimental structures of urea transporters and proteins crystallized in the presence of urea or urea derivatives.

STS-106 orbiter Atlantis rolls over to the VAB

NASA Technical Reports Server (NTRS)

2000-01-01

The orbiter Atlantis heads toward the open door of the Vehicle Assembly Building (VAB) on the north side. In the VAB it will be lifted to vertical and placed aboard the mobile launcher platform (MLP) for stacking with the solid rocket boosters and external tank. Atlantis is scheduled to launch Sept. 8 on mission STS-106, the fourth construction flight to the International Space Station, with a crew of seven.

Atlantis is lifted from its transporter in the VAB

NASA Technical Reports Server (NTRS)

2001-01-01

KENNEDY SPACE CENTER, Fla. -- In the Vehicle Assembly Building, the orbiter Atlantis is being lifted from a transporter after rolling over from Orbiter Processing Facility bay 3. The orbiter will be raised to a vertical position, rotated and lifted into high bay 1, and stacked with its external tank and solid rocket boosters. Space Shuttle Atlantis is scheduled to launch on mission STS-104 in early July.

Optofluidic Modulation of Self-Associated Nanostructural Units Forming Planar Bragg Microcavities.

PubMed

Oliva-Ramirez, Manuel; Barranco, Angel; Löffler, Markus; Yubero, Francisco; González-Elipe, Agustin R

2016-01-26

Bragg microcavities (BMs) formed by the successive stacking of nanocolumnar porous SiO2 and TiO2 layers with slanted, zigzag, chiral, and vertical configurations are prepared by physical vapor deposition at oblique angles while azimuthally varying the substrate orientation during the multilayer growth. The slanted and zigzag BMs act as wavelength-selective optical retarders when they are illuminated with linearly polarized light, while no polarization dependence is observed for the chiral and vertical cavities. This distinct optical behavior is attributed to a self-nanostructuration mechanism involving a fence-bundling association of nanocolumns as observed by focused ion beam scanning electron microscopy in the slanted and zigzag microcavities. The outstanding retarder response of the optically active BMs can be effectively modulated by dynamic infiltration of nano- and mesopores with liquids of different refraction indices acting as a switch of the polarization behavior. The unprecedented polarization and tunable optofluidic properties of these nanostructured photonic systems have been successfully simulated with a simple model that assumes a certain birefringence for the individual stacked layers and accounts for the light interference phenomena developed in the BMs. The possibilities of this type of self-arranged nanostructured and optically active BMs for liquid sensing and monitoring applications are discussed.

High power vertical stacked and horizontal arrayed diode laser bar development based on insulation micro-channel cooling (IMCC) and hard solder bonding technology

NASA Astrophysics Data System (ADS)

Wang, Boxue; Jia, Yangtao; Zhang, Haoyu; Jia, Shiyin; Liu, Jindou; Wang, Weifeng; Liu, Xingsheng

2018-02-01

An insulation micro-channel cooling (IMCC) has been developed for packaging high power bar-based vertical stack and horizontal array diode lasers, which eliminates many issues caused in its congener packaged by commercial copper formed micro-channel cooler(MCC), such as coefficient of thermal expansion (CTE) mismatch between cooler and diode laser bar, high coolant quality requirement (DI water) and channel corrosion and electro-corrosion induced by DI water if the DI-water quality is not well maintained The IMCC cooler separates water flow route and electrical route, which allows tap-water as coolant without electro-corrosion and therefore prolongs cooler lifetime dramatically and escalated the reliability of these diode lasers. The thickness of ceramic and copper in an IMCC cooler is well designed to minimize the CTE mismatch between laser bar and cooler, consequently, a very low "SMILE" of the laser bar can be achieved for small fast axis divergence after collimation. In additional, gold-tin hard solder bonding technology was also developed to minimize the risk of solder electromigration at high current density and thermal fatigue under hard-pulse operation mode. Testing results of IMCC packaged diode lasers are presented in this report.

Application of kinematic vorticity techniques for mylonitized Rocks in Al Amar suture, eastern Arabian Shield, Saudi Arabia

NASA Astrophysics Data System (ADS)

Hamimi, Z.; Kassem, O. M. K.; El-Sabrouty, M. N.

2015-09-01

The rotation of rigid objects within a flowing viscous medium is a function of several factors including the degree of non-coaxiality. The relationship between the orientation of such objects and their aspect ratio can be used in vorticity analyses in a variety of geological settings. Method for estimation of vorticity analysis to quantitative of kinematic vorticity number (Wm) has been applied using rotated rigid objects, such as quartz and feldspar objects. The kinematic vorticity number determined for high temperature mylonitic Abt schist in Al Amar area, extreme eastern Arabian Shield, ranges from ˜0.8 to 0.9. Obtained results from vorticity and strain analyses indicate that deformation in the area deviated from simple shear. It is concluded that nappe stacking occurred early during an earlier thrusting event, probably by brittle imbrications. Ductile strain was superimposed on the nappe structure at high-pressure as revealed by a penetrative subhorizontal foliation that is developed subparallel to tectonic contacts versus the underlying and overlying nappes. Accumulation of ductile strain during underplating was not by simple shear but involved a component of vertical shortening, which caused the subhorizontal foliation in the Al Amar area. In most cases, this foliation was formed concurrently with thrust sheets imbrications, indicating that nappe stacking was associated with vertical shortening.

A three-dimensional architecture of vertically aligned multilayer graphene facilitates heat dissipation across joint solid surfaces

NASA Astrophysics Data System (ADS)

Liang, Qizhen; Yao, Xuxia; Wang, Wei; Wong, C. P.

2012-02-01

Low operation temperature and efficient heat dissipation are important for device life and speed in current electronic and photonic technologies. Being ultra-high thermally conductive, graphene is a promising material candidate for heat dissipation improvement in devices. In the application, graphene is expected to be vertically stacked between contact solid surfaces in order to facilitate efficient heat dissipation and reduced interfacial thermal resistance across contact solid surfaces. However, as an ultra-thin membrane-like material, graphene is susceptible to Van der Waals forces and usually tends to be recumbent on substrates. Thereby, direct growth of vertically aligned free-standing graphene on solid substrates in large scale is difficult and rarely available in current studies, bringing significant barriers in graphene's application as thermal conductive media between joint solid surfaces. In this work, a three-dimensional vertically aligned multi-layer graphene architecture is constructed between contacted Silicon/Silicon surfaces with pure Indium as a metallic medium. Significantly higher equivalent thermal conductivity and lower contact thermal resistance of vertically aligned multilayer graphene are obtained, compared with those of their recumbent counterpart. This finding provides knowledge of vertically aligned graphene architectures, which may not only facilitate current demanding thermal management but also promote graphene's widespread applications such as electrodes for energy storage devices, polymeric anisotropic conductive adhesives, etc.

Dynamic characteristics of undoped and p-doped Fabry-Perot InAs/InP quantum dash based ridge waveguide lasers for access/metro networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mollet, O., E-mail: oriane.mollet@lpn.cnrs.fr; Martinez, A.; Merghem, K.

In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm{sup −1} is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.

Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. H.; Cheng, Y. H.; Ko, C. W.

2015-10-12

This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed tomore » the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.« less

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

NASA Astrophysics Data System (ADS)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Prediction of weak topological insulators in layered semiconductors.

PubMed

Yan, Binghai; Müchler, Lukas; Felser, Claudia

2012-09-14

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

Noise reduction in long‐period seismograms by way of array summing

USGS Publications Warehouse

Ringler, Adam; Wilson, David; Storm, Tyler; Marshall, Benjamin T.; Hutt, Charles R.; Holland, Austin

2016-01-01

Long‐period (>100  s period) seismic data can often be dominated by instrumental noise as well as local site noise. When multiple collocated sensors are installed at a single site, it is possible to improve the overall station noise levels by applying stacking methods to their traces. We look at the noise reduction in long‐period seismic data by applying the time–frequency phase‐weighted stacking method of Schimmel and Gallart (2007) as well as the phase‐weighted stacking (PWS) method of Schimmel and Paulssen (1997) to four collocated broadband sensors installed in the quiet Albuquerque Seismological Laboratory underground vault. We show that such stacking methods can improve vertical noise levels by as much as 10 dB over the mean background noise levels at 400 s period, suggesting that greater improvements could be achieved with an array involving multiple sensors. We also apply this method to reduce local incoherent noise on horizontal seismic records of the 2 March 2016 Mw 7.8 Sumatra earthquake, where the incoherent noise levels at very long periods are similar in amplitude to the earthquake signal. To maximize the coherency, we apply the PWS method to horizontal data where relative azimuths between collocated sensors are estimated and compared with a simpler linear stack with no azimuthal rotation. Such methods could help reduce noise levels at various seismic stations where multiple high‐quality sensors have been deployed. Such small arrays may also provide a solution to improving long‐period noise levels at Global Seismographic Network stations.

Nonadiabatic conditional geometric phase shift with NMR.

PubMed

Xiang-Bin, W; Keiji, M

2001-08-27

A conditional geometric phase shift gate, which is fault tolerant to certain types of errors due to its geometric nature, was realized recently via nuclear magnetic resonance (NMR) under adiabatic conditions. However, in quantum computation, everything must be completed within the decoherence time. The adiabatic condition makes any fast conditional Berry phase (cyclic adiabatic geometric phase) shift gate impossible. Here we show that by using a newly designed sequence of simple operations with an additional vertical magnetic field, the conditional geometric phase shift gate can be run nonadiabatically. Therefore geometric quantum computation can be done at the same rate as usual quantum computation.

Optical levitation of a mirror for reaching the standard quantum limit.

PubMed

Michimura, Yuta; Kuwahara, Yuya; Ushiba, Takafumi; Matsumoto, Nobuyuki; Ando, Masaki

2017-06-12

We propose a new method to optically levitate a macroscopic mirror with two vertical Fabry-Pérot cavities linearly aligned. This configuration gives the simplest possible optical levitation in which the number of laser beams used is the minimum of two. We demonstrate that reaching the standard quantum limit (SQL) of a displacement measurement with our system is feasible with current technology. The cavity geometry and the levitated mirror parameters are designed to ensure that the Brownian vibration of the mirror surface is smaller than the SQL. Our scheme provides a promising tool for testing macroscopic quantum mechanics.

Optical levitation of a mirror for reaching the standard quantum limit

NASA Astrophysics Data System (ADS)

Michimura, Yuta; Kuwahara, Yuya; Ushiba, Takafumi; Matsumoto, Nobuyuki; Ando, Masaki

2017-06-01

We propose a new method to optically levitate a macroscopic mirror with two vertical Fabry-P{\\'e}rot cavities linearly aligned. This configuration gives the simplest possible optical levitation in which the number of laser beams used is the minimum of two. We demonstrate that reaching the standard quantum limit (SQL) of a displacement measurement with our system is feasible with current technology. The cavity geometry and the levitated mirror parameters are designed to ensure that the Brownian vibration of the mirror surface is smaller than the SQL. Our scheme provides a promising tool for testing macroscopic quantum mechanics.

Selective etching of InGaAs/GaAs(100) multilayers of quantum-dot chains

NASA Astrophysics Data System (ADS)

Wang, Zh. M.; Zhang, L.; Holmes, K.; Salamo, G. J.

2005-04-01

We report selective chemical etching as a promising procedure to study the buried quantum dots in multiple InGaAs/GaAs layers. The dot layer-by-dot layer etching is demonstrated using a mixed solution of NH4OH:H2O2:H2O. Regular plan-view atomic force microscopy reveals that all of the exposed InGaAs layers have a chain-like lateral ordering despite the potential of significant In-Ga intermixing during capping. The vertical self-correlation of quantum dots in the chains is observed.

Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Iliadis, Agisilaos A.; Christou, Aristos

2003-07-01

The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular Beam Epitaxy. The VCSEL arrays are processed using inductively coupled plasma (ICP) etching with BCl3 gas mixtures to achieve vertical walls and small geometries, and the fabrication of the devices proceeds by using conventional Ohmic contacts (Ti-Pt-Au and Ni-Au-Ge-Ni) and indium tin oxide (ITO) transparent contacts. The theoretical investigation of the optical properties of the quaternary compound semiconductor alloys allows us to select the optimum materials for highly reflective Bragg mirrors with less periods. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Navigating in foldonia: Using accelerated molecular dynamics to explore stability, unfolding and self-healing of the β-solenoid structure formed by a silk-like polypeptide

PubMed Central

Zhao, Binwu

2017-01-01

The β roll molecules with sequence (GAGAGAGQ)10 stack via hydrogen bonding to form fibrils which have been themselves been used to make viral capsids of DNA strands, supramolecular nanotapes and pH-responsive gels. Accelerated molecular dynamics (aMD) simulations are used to investigate the unfolding of a stack of two β roll molecules, (GAGAGAGQ)10, to shed light on the folding mechanism by which silk-inspired polypeptides form fibrils and to identify the dominant forces that keep the silk-inspired polypeptide in a β roll configuration. Our study shows that a molecule in a stack of two β roll molecules unfolds in a step-wise fashion mainly from the C terminal. The bottom template is found to play an important role in stabilizing the β roll structure of the molecule on top by strengthening the hydrogen bonds in the layer that it contacts. Vertical hydrogen bonds within the β roll structure are considerably weaker than lateral hydrogen bonds, signifying the importance of lateral hydrogen bonds in stabilizing the β roll structure. Finally, an intermediate structure was found containing a β hairpin and an anti-parallel β sheet consisting of strands from the top and bottom molecules, revealing the self-healing ability of the β roll stack. PMID:28329017

Low driving voltage simplified tandem organic light-emitting devices by using exciplex-forming hosts

NASA Astrophysics Data System (ADS)

Zhou, Dong-Ying; Cui, Lin-Song; Zhang, Ying-Jie; Liao, Liang-Sheng; Aziz, Hany

2014-10-01

Tandem organic light-emitting devices (OLEDs), i.e., OLEDs containing multiple electroluminescence (EL) units that are vertically stacked, are attracting significant interest because of their ability to realize high current efficiency and long operational lifetime. However, stacking multiple EL units in tandem OLEDs increases driving voltage and complicates fabrication process relative to their standard single unit counterparts. In this paper, we demonstrate low driving voltage tandem OLEDs via utilizing exciplex-forming hosts in the EL units instead of conventional host materials. The use of exciplex-forming hosts reduces the charge injection barriers and the trapping of charges on guest molecules, resulting in the lower driving voltage. The use of exciplex-forming hosts also allows using fewer layers, hence simpler EL configuration which is beneficial for reducing the fabrication complexity of tandem OLEDs.

Graph State-Based Quantum Secret Sharing with the Chinese Remainder Theorem

NASA Astrophysics Data System (ADS)

Guo, Ying; Luo, Peng; Wang, Yijun

2016-11-01

Quantum secret sharing (QSS) is a significant quantum cryptography technology in the literature. Dividing an initial secret into several sub-secrets which are then transferred to other legal participants so that it can be securely recovered in a collaboration fashion. In this paper, we develop a quantum route selection based on the encoded quantum graph state, thus enabling the practical QSS scheme in the small-scale complex quantum network. Legal participants are conveniently designated with the quantum route selection using the entanglement of the encoded graph states. Each participant holds a vertex of the graph state so that legal participants are selected through performing operations on specific vertices. The Chinese remainder theorem (CRT) strengthens the security of the recovering process of the initial secret among the legal participants. The security is ensured by the entanglement of the encoded graph states that are cooperatively prepared and shared by legal users beforehand with the sub-secrets embedded in the CRT over finite fields.

Quantum Markov chains

NASA Astrophysics Data System (ADS)

Gudder, Stanley

2008-07-01

A new approach to quantum Markov chains is presented. We first define a transition operation matrix (TOM) as a matrix whose entries are completely positive maps whose column sums form a quantum operation. A quantum Markov chain is defined to be a pair (G,E) where G is a directed graph and E =[Eij] is a TOM whose entry Eij labels the edge from vertex j to vertex i. We think of the vertices of G as sites that a quantum system can occupy and Eij is the transition operation from site j to site i in one time step. The discrete dynamics of the system is obtained by iterating the TOM E. We next consider a special type of TOM called a transition effect matrix. In this case, there are two types of dynamics, a state dynamics and an operator dynamics. Although these two types are not identical, they are statistically equivalent. We next give examples that illustrate various properties of quantum Markov chains. We conclude by showing that our formalism generalizes the usual framework for quantum random walks.

REACTOR UNLOADING

DOEpatents

Leverett, M.C.

1958-02-18

This patent is related to gas cooled reactors wherein the fuel elements are disposed in vertical channels extending through the reactor core, the cooling gas passing through the channels from the bottom to the top of the core. The invention is a means for unloading the fuel elements from the core and comprises dump values in the form of flat cars mounted on wheels at the bottom of the core structure which support vertical stacks of fuel elements. When the flat cars are moved, either manually or automatically, for normal unloading purposes, or due to a rapid rise in the reproduction ratio within the core, the fuel elements are permtted to fall by gravity out of the core structure thereby reducing the reproduction ratio or stopping the reaction as desired.

Ground and excited states of NH4: Electron propagator and quantum defect analysis

NASA Astrophysics Data System (ADS)

Ortiz, J. V.; Martín, I.; Velasco, A. M.; Lavín, C.

2004-05-01

Vertical excitation energies of the Rydberg radical NH4 are inferred from ab initio electron propagator calculations on the electron affinities of NH4+. The adiabatic ionization energy of NH4 is evaluated with coupled-cluster calculations. These predictions provide optimal parameters for the molecular-adapted quantum defect orbital method, which is used to determine Einstein emission coefficients and radiative lifetimes. Comparisons with spectroscopic data and previous calculations are discussed.

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

PubMed Central

Rong, X.; Wang, X. Q.; Chen, G.; Zheng, X. T.; Wang, P.; Xu, F. J.; Qin, Z. X.; Tang, N.; Chen, Y. H.; Sang, L. W.; Sumiya, M.; Ge, W. K.; Shen, B.

2015-01-01

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a novel spacer barrier layer is used to balance the internal electric field. As a result, a nearly flat band potential profile is obtained in the step barrier layers of the AlGaN/GaN step quantum wells and a bound-to-quasi-continuum (B-to-QC) type intersubband prototype device with detectable photocurrent at atmosphere window (3–5 μm) is achieved in such nitride semiconductors. PMID:26395756

Validation of digital elevation models (DEMs) and comparison of geomorphic metrics on the southern Central Andean Plateau

NASA Astrophysics Data System (ADS)

Purinton, Benjamin; Bookhagen, Bodo

2017-04-01

In this study, we validate and compare elevation accuracy and geomorphic metrics of satellite-derived digital elevation models (DEMs) on the southern Central Andean Plateau. The plateau has an average elevation of 3.7 km and is characterized by diverse topography and relief, lack of vegetation, and clear skies that create ideal conditions for remote sensing. At 30 m resolution, SRTM-C, ASTER GDEM2, stacked ASTER L1A stereopair DEM, ALOS World 3D, and TanDEM-X have been analyzed. The higher-resolution datasets include 12 m TanDEM-X, 10 m single-CoSSC TerraSAR-X/TanDEM-X DEMs, and 5 m ALOS World 3D. These DEMs are state of the art for optical (ASTER and ALOS) and radar (SRTM-C and TanDEM-X) spaceborne sensors. We assessed vertical accuracy by comparing standard deviations of the DEM elevation versus 307 509 differential GPS measurements across 4000 m of elevation. For the 30 m DEMs, the ASTER datasets had the highest vertical standard deviation at > 6.5 m, whereas the SRTM-C, ALOS World 3D, and TanDEM-X were all < 3.5 m. Higher-resolution DEMs generally had lower uncertainty, with both the 12 m TanDEM-X and 5 m ALOS World 3D having < 2 m vertical standard deviation. Analysis of vertical uncertainty with respect to terrain elevation, slope, and aspect revealed the low uncertainty across these attributes for SRTM-C (30 m), TanDEM-X (12-30 m), and ALOS World 3D (5-30 m). Single-CoSSC TerraSAR-X/TanDEM-X 10 m DEMs and the 30 m ASTER GDEM2 displayed slight aspect biases, which were removed in their stacked counterparts (TanDEM-X and ASTER Stack). Based on low vertical standard deviations and visual inspection alongside optical satellite data, we selected the 30 m SRTM-C, 12-30 m TanDEM-X, 10 m single-CoSSC TerraSAR-X/TanDEM-X, and 5 m ALOS World 3D for geomorphic metric comparison in a 66 km2 catchment with a distinct river knickpoint. Consistent m/n values were found using chi plot channel profile analysis, regardless of DEM type and spatial resolution. Slope, curvature, and drainage area were calculated and plotting schemes were used to assess basin-wide differences in the hillslope-to-valley transition related to the knickpoint. While slope and hillslope length measurements vary little between datasets, curvature displays higher magnitude measurements with fining resolution. This is especially true for the optical 5 m ALOS World 3D DEM, which demonstrated high-frequency noise in 2-8 pixel steps through a Fourier frequency analysis. The improvements in accurate space-radar DEMs (e.g., TanDEM-X) for geomorphometry are promising, but airborne or terrestrial data are still necessary for meter-scale analysis.

Graph-theoretic approach to quantum correlations.

PubMed

Cabello, Adán; Severini, Simone; Winter, Andreas

2014-01-31

Correlations in Bell and noncontextuality inequalities can be expressed as a positive linear combination of probabilities of events. Exclusive events can be represented as adjacent vertices of a graph, so correlations can be associated to a subgraph. We show that the maximum value of the correlations for classical, quantum, and more general theories is the independence number, the Lovász number, and the fractional packing number of this subgraph, respectively. We also show that, for any graph, there is always a correlation experiment such that the set of quantum probabilities is exactly the Grötschel-Lovász-Schrijver theta body. This identifies these combinatorial notions as fundamental physical objects and provides a method for singling out experiments with quantum correlations on demand.

Relating zeta functions of discrete and quantum graphs

NASA Astrophysics Data System (ADS)

Harrison, Jonathan; Weyand, Tracy

2018-02-01

We write the spectral zeta function of the Laplace operator on an equilateral metric graph in terms of the spectral zeta function of the normalized Laplace operator on the corresponding discrete graph. To do this, we apply a relation between the spectrum of the Laplacian on a discrete graph and that of the Laplacian on an equilateral metric graph. As a by-product, we determine how the multiplicity of eigenvalues of the quantum graph, that are also in the spectrum of the graph with Dirichlet conditions at the vertices, depends on the graph geometry. Finally we apply the result to calculate the vacuum energy and spectral determinant of a complete bipartite graph and compare our results with those for a star graph, a graph in which all vertices are connected to a central vertex by a single edge.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

17. Internal view of boiler in steam space above return ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

17. Internal view of boiler in steam space above return flues. View looks forward in ship toward fireboxes; tubes (flues) below carry hot combustion gases from return chamber to smoke chamber. From thence gasses flow through vertical pipe at left into steam stack, and eventually to ship's smokestack. Inclined and radiating straps are stays used to reinforce boiler plates against distortion under pressure. - Steamboat TICONDEROGA, Shelburne Museum Route 7, Shelburne, Chittenden County, VT

Ultra-high-aspect-orthogonal and tunable three dimensional polymeric nanochannel stack array for BioMEMS applications

NASA Astrophysics Data System (ADS)

Heo, Joonseong; Kwon, Hyukjin J.; Jeon, Hyungkook; Kim, Bumjoo; Kim, Sung Jae; Lim, Geunbae

2014-07-01

Nanofabrication technologies have been a strong advocator for new scientific fundamentals that have never been described by traditional theory, and have played a seed role in ground-breaking nano-engineering applications. In this study, we fabricated ultra-high-aspect (~106 with O(100) nm nanochannel opening and O(100) mm length) orthogonal nanochannel array using only polymeric materials. Vertically aligned nanochannel arrays in parallel can be stacked to form a dense nano-structure. Due to the flexibility and stretchability of the material, one can tune the size and shape of the nanochannel using elongation and even roll the stack array to form a radial-uniformly distributed nanochannel array. The roll can be cut at discretionary lengths for incorporation with a micro/nanofluidic device. As examples, we demonstrated ion concentration polarization with the device for Ohmic-limiting/overlimiting current-voltage characteristics and preconcentrated charged species. The density of the nanochannel array was lower than conventional nanoporous membranes, such as anodic aluminum oxide membranes (AAO). However, accurate controllability over the nanochannel array dimensions enabled multiplexed one microstructure-on-one nanostructure interfacing for valuable biological/biomedical microelectromechanical system (BioMEMS) platforms, such as nano-electroporation.Nanofabrication technologies have been a strong advocator for new scientific fundamentals that have never been described by traditional theory, and have played a seed role in ground-breaking nano-engineering applications. In this study, we fabricated ultra-high-aspect (~106 with O(100) nm nanochannel opening and O(100) mm length) orthogonal nanochannel array using only polymeric materials. Vertically aligned nanochannel arrays in parallel can be stacked to form a dense nano-structure. Due to the flexibility and stretchability of the material, one can tune the size and shape of the nanochannel using elongation and even roll the stack array to form a radial-uniformly distributed nanochannel array. The roll can be cut at discretionary lengths for incorporation with a micro/nanofluidic device. As examples, we demonstrated ion concentration polarization with the device for Ohmic-limiting/overlimiting current-voltage characteristics and preconcentrated charged species. The density of the nanochannel array was lower than conventional nanoporous membranes, such as anodic aluminum oxide membranes (AAO). However, accurate controllability over the nanochannel array dimensions enabled multiplexed one microstructure-on-one nanostructure interfacing for valuable biological/biomedical microelectromechanical system (BioMEMS) platforms, such as nano-electroporation. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00350k

Highly efficient organic solar cells with improved vertical donor-acceptor compositional gradient via an inverted off-center spinning method

DOE PAGES

Huang, Jiang; Carpenter, Joshua H.; Li, Chang -Zhi; ...

2015-12-02

A novel, yet simple solution fabrication technique to address the trade-off between photocurrent and fill factor in thick bulk heterojunction organic solar cells is described. Lastly, the inverted off-center spinning technique promotes a vertical gradient of the donor–acceptor phase-separated morphology, enabling devices with near 100% internal quantum efficiency and a high power conversion efficiency of 10.95%.

Deuteration as a Means to Tune Crystallinity of Conducting Polymers

DOE PAGES

Jakowski, Jacek; Huang, Jingsong; Garashchuk, Sophya; ...

2017-08-25

The effects of deuterium isotope substitution on conjugated polymer chain stacking of poly(3-hexylthiophene) is studied in this paper experimentally by X-ray diffraction (XRD) in combination with gel permeation chromatography and theoretically using density functional theory and quantum molecular dynamics. For four P3HT materials with different levels of deuteration (pristine, main-chain deuterated, side-chain deuterated, and fully deuterated), the XRD measurements show that main-chain thiophene deuteration significantly reduces crystallinity, regardless of the side-chain deuteration. The reduction of crystallinity due to the main-chain deuteration is a quantum nuclear effect resulting from a static zero-point vibrational energy combined with a dynamic correlation of themore » dipole fluctuations. The quantum molecular dynamics simulations confirm the interchain correlation of the proton–proton and deuteron–deuteron motions but not of the proton–deuteron motion. Thus and finally, isotopic purity is an important factor affecting stability and properties of conjugated polymer crystals, which should be considered in the design of electronic and spintronic devices.« less

Deuteration as a Means to Tune Crystallinity of Conducting Polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jakowski, Jacek; Huang, Jingsong; Garashchuk, Sophya

The effects of deuterium isotope substitution on conjugated polymer chain stacking of poly(3-hexylthiophene) is studied in this paper experimentally by X-ray diffraction (XRD) in combination with gel permeation chromatography and theoretically using density functional theory and quantum molecular dynamics. For four P3HT materials with different levels of deuteration (pristine, main-chain deuterated, side-chain deuterated, and fully deuterated), the XRD measurements show that main-chain thiophene deuteration significantly reduces crystallinity, regardless of the side-chain deuteration. The reduction of crystallinity due to the main-chain deuteration is a quantum nuclear effect resulting from a static zero-point vibrational energy combined with a dynamic correlation of themore » dipole fluctuations. The quantum molecular dynamics simulations confirm the interchain correlation of the proton–proton and deuteron–deuteron motions but not of the proton–deuteron motion. Thus and finally, isotopic purity is an important factor affecting stability and properties of conjugated polymer crystals, which should be considered in the design of electronic and spintronic devices.« less

Extended Quantum Field Theory, Index Theory, and the Parity Anomaly

NASA Astrophysics Data System (ADS)

Müller, Lukas; Szabo, Richard J.

2018-06-01

We use techniques from functorial quantum field theory to provide a geometric description of the parity anomaly in fermionic systems coupled to background gauge and gravitational fields on odd-dimensional spacetimes. We give an explicit construction of a geometric cobordism bicategory which incorporates general background fields in a stack, and together with the theory of symmetric monoidal bicategories we use it to provide the concrete forms of invertible extended quantum field theories which capture anomalies in both the path integral and Hamiltonian frameworks. Specialising this situation by using the extension of the Atiyah-Patodi-Singer index theorem to manifolds with corners due to Loya and Melrose, we obtain a new Hamiltonian perspective on the parity anomaly. We compute explicitly the 2-cocycle of the projective representation of the gauge symmetry on the quantum state space, which is defined in a parity-symmetric way by suitably augmenting the standard chiral fermionic Fock spaces with Lagrangian subspaces of zero modes of the Dirac Hamiltonian that naturally appear in the index theorem. We describe the significance of our constructions for the bulk-boundary correspondence in a large class of time-reversal invariant gauge-gravity symmetry-protected topological phases of quantum matter with gapless charged boundary fermions, including the standard topological insulator in 3 + 1 dimensions.

Local adjacency metric dimension of sun graph and stacked book graph

NASA Astrophysics Data System (ADS)

Yulisda Badri, Alifiah; Darmaji

2018-03-01

A graph is a mathematical system consisting of a non-empty set of nodes and a set of empty sides. One of the topics to be studied in graph theory is the metric dimension. Application in the metric dimension is the navigation robot system on a path. Robot moves from one vertex to another vertex in the field by minimizing the errors that occur in translating the instructions (code) obtained from the vertices of that location. To move the robot must give different instructions (code). In order for the robot to move efficiently, the robot must be fast to translate the code of the nodes of the location it passes. so that the location vertex has a minimum distance. However, if the robot must move with the vertex location on a very large field, so the robot can not detect because the distance is too far.[6] In this case, the robot can determine its position by utilizing location vertices based on adjacency. The problem is to find the minimum cardinality of the required location vertex, and where to put, so that the robot can determine its location. The solution to this problem is the dimension of adjacency metric and adjacency metric bases. Rodrguez-Velzquez and Fernau combine the adjacency metric dimensions with local metric dimensions, thus becoming the local adjacency metric dimension. In the local adjacency metric dimension each vertex in the graph may have the same adjacency representation as the terms of the vertices. To obtain the local metric dimension of values in the graph of the Sun and the stacked book graph is used the construction method by considering the representation of each adjacent vertex of the graph.

Coatings and surface treatments for enhanced performance suspensions for future gravitational wave detectors

NASA Astrophysics Data System (ADS)

Birney, R.; Cumming, A. V.; Campsie, P.; Gibson, D.; Hammond, G. D.; Hough, J.; Martin, I. W.; Reid, S.; Rowan, S.; Song, S.; Talbot, C.; Vine, D.; Wallace, G.

2017-12-01

Further improvements in the low frequency sensitivity of gravitational wave detectors are important for increasing the observable population of astrophysical sources, such as intermediate mass compact black hole binary systems. Improvements in the lower stage mirror and suspension systems will set challenging targets for the required thermal noise performance of the cantilever blade springs, which provide vertical softness and, thus, isolation to the mirror suspension stack. This is required due to the coupling between the vertical and horizontal axes due to the curvature of the Earth. This can be achieved through use of high mechanical Q materials, which are compatible with cryogenic cooling, such as crystalline silicon. However, such materials are brittle, posing further challenges for assembly/jointing and, more generally, for long-term robustness. Here, we report on experimental studies of the breaking strength of silicon at room temperature, via both tensile and 4-point flexural testing; and on the effects of various surface treatments and coatings on durability and strength. Single- and multi-layer DLC (diamond-like carbon) coatings, together with magnetron-sputtered silica and thermally-grown silica, are investigated, as are the effects of substrate preparation and argon plasma pre-treatment. Application of single- or multi-layer DLC coatings can significantly improve the failure stress of silicon flexures, in addition to improved robustness for handling (assessed through abrasion tests). Improvements of up to 80% in tensile strength, a twofold increase in flexural strength, in addition to a 6.4 times reduction in the vertical thermal noise contribution of the suspension stack at 10 Hz are reported (compared to current Advanced LIGO design). The use of silicon blade springs would also significantly reduce potential ‘crackling noise’ associated with the underlying discrete events associated with plastic deformation in loaded flexures.

Flow Ambiguity: A Path Towards Classically Driven Blind Quantum Computation

NASA Astrophysics Data System (ADS)

Mantri, Atul; Demarie, Tommaso F.; Menicucci, Nicolas C.; Fitzsimons, Joseph F.

2017-07-01

Blind quantum computation protocols allow a user to delegate a computation to a remote quantum computer in such a way that the privacy of their computation is preserved, even from the device implementing the computation. To date, such protocols are only known for settings involving at least two quantum devices: either a user with some quantum capabilities and a remote quantum server or two or more entangled but noncommunicating servers. In this work, we take the first step towards the construction of a blind quantum computing protocol with a completely classical client and single quantum server. Specifically, we show how a classical client can exploit the ambiguity in the flow of information in measurement-based quantum computing to construct a protocol for hiding critical aspects of a computation delegated to a remote quantum computer. This ambiguity arises due to the fact that, for a fixed graph, there exist multiple choices of the input and output vertex sets that result in deterministic measurement patterns consistent with the same fixed total ordering of vertices. This allows a classical user, computing only measurement angles, to drive a measurement-based computation performed on a remote device while hiding critical aspects of the computation.

Heterojunction-Internal-Photoemission Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1991-01-01

New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.

Multi-mode application of graphene quantum dots bonded silica stationary phase for high performance liquid chromatography.

PubMed

Wu, Qi; Sun, Yaming; Zhang, Xiaoli; Zhang, Xia; Dong, Shuqing; Qiu, Hongdeng; Wang, Litao; Zhao, Liang

2017-04-07

Graphene quantum dots (GQDs), which possess hydrophobic, hydrophilic, π-π stacking and hydrogen bonding properties, have great prospect in HPLC. In this study, a novel GQDs bonded silica stationary phase was prepared and applied in multiple separation modes including normal phase, reversed phase and hydrophilic chromatography mode. Alkaloids, nucleosides and nucleobases were chosen as test compounds to evaluate the separation performance of this column in hydrophilic chromatographic mode. The tested polar compounds achieved baseline separation and the resolutions reached 2.32, 4.62, 7.79, 1.68 for thymidine, uridine, adenosine, cytidine and guanosine. This new column showed satisfactory chromatographic performance for anilines, phenols and polycyclic aromatic hydrocarbons in normal and reversed phase mode. Five anilines were completely separated within 10min under the condition of mobile phase containing only 10% methanol. The effect of water content, buffer concentration and pH on chromatographic separation was further investigated, founding that this new stationary phase showed a complex retention mechanism of partitioning, adsorption and electrostatic interaction in hydrophilic chromatography mode, and the multiple retention interactions such as π-π stacking and π-π electron-donor-acceptor interaction played an important role during the separation process. This GQDs bonded column, which allows us to adjust appropriate chromatography mode according to the properties of analytes, has possibility in actual application after further research. Copyright © 2017 Elsevier B.V. All rights reserved.

Energy hyperspace for stacking interaction in AU/AU dinucleotide step: Dispersion-corrected density functional theory study.

PubMed

Mukherjee, Sanchita; Kailasam, Senthilkumar; Bansal, Manju; Bhattacharyya, Dhananjay

2014-01-01

Double helical structures of DNA and RNA are mostly determined by base pair stacking interactions, which give them the base sequence-directed features, such as small roll values for the purine-pyrimidine steps. Earlier attempts to characterize stacking interactions were mostly restricted to calculations on fiber diffraction geometries or optimized structure using ab initio calculations lacking variation in geometry to comment on rather unusual large roll values observed in AU/AU base pair step in crystal structures of RNA double helices. We have generated stacking energy hyperspace by modeling geometries with variations along the important degrees of freedom, roll, and slide, which were chosen via statistical analysis as maximally sequence dependent. Corresponding energy contours were constructed by several quantum chemical methods including dispersion corrections. This analysis established the most suitable methods for stacked base pair systems despite the limitation imparted by number of atom in a base pair step to employ very high level of theory. All the methods predict negative roll value and near-zero slide to be most favorable for the purine-pyrimidine steps, in agreement with Calladine's steric clash based rule. Successive base pairs in RNA are always linked by sugar-phosphate backbone with C3'-endo sugars and this demands C1'-C1' distance of about 5.4 Å along the chains. Consideration of an energy penalty term for deviation of C1'-C1' distance from the mean value, to the recent DFT-D functionals, specifically ωB97X-D appears to predict reliable energy contour for AU/AU step. Such distance-based penalty improves energy contours for the other purine-pyrimidine sequences also. © 2013 Wiley Periodicals, Inc. Biopolymers 101: 107-120, 2014. Copyright © 2013 Wiley Periodicals, Inc.

Charge optimized many-body potential for aluminum.

PubMed

Choudhary, Kamal; Liang, Tao; Chernatynskiy, Aleksandr; Lu, Zizhe; Goyal, Anuj; Phillpot, Simon R; Sinnott, Susan B

2015-01-14

An interatomic potential for Al is developed within the third generation of the charge optimized many-body (COMB3) formalism. The database used for the parameterization of the potential consists of experimental data and the results of first-principles and quantum chemical calculations. The potential exhibits reasonable agreement with cohesive energy, lattice parameters, elastic constants, bulk and shear modulus, surface energies, stacking fault energies, point defect formation energies, and the phase order of metallic Al from experiments and density functional theory. In addition, the predicted phonon dispersion is in good agreement with the experimental data and first-principles calculations. Importantly for the prediction of the mechanical behavior, the unstable stacking fault energetics along the [Formula: see text] direction on the (1 1 1) plane are similar to those obtained from first-principles calculations. The polycrsytal when strained shows responses that are physical and the overall behavior is consistent with experimental observations.

Influence of acceptor on charge mobility in stacked π-conjugated polymers

NASA Astrophysics Data System (ADS)

Sun, Shih-Jye; Menšík, Miroslav; Toman, Petr; Gagliardi, Alessio; Král, Karel

2018-02-01

We present a quantum molecular model to calculate mobility of π-stacked P3HT polymer layers with electron acceptor dopants coupled next to side groups in random position with respect to the linear chain. The hole density, the acceptor LUMO energy and the hybridization transfer integral between the acceptor and polymer were found to be very critical factors to the final hole mobility. For a dopant LUMO energy close and high above the top of the polymer valence band we have found a significant mobility increase with the hole concentration and with the dopant LUMO energy approaching the top of the polymer valence band. Higher mobility was achieved for small values of hybridization transfer integral between polymer and the acceptor, corresponding to the case of weakly bound acceptor. Strong couplings between the polymer and the acceptor with Coulomb repulsion interactions induced from the electron localizations was found to suppress the hole mobility.

Acoustic Type-II Weyl Nodes from Stacking Dimerized Chains

NASA Astrophysics Data System (ADS)

Yang, Zhaoju; Zhang, Baile

2016-11-01

Lorentz-violating type-II Weyl fermions, which were missed in Weyl's prediction of nowadays classified type-I Weyl fermions in quantum field theory, have recently been proposed in condensed matter systems. The semimetals hosting type-II Weyl fermions offer a rare platform for realizing many exotic physical phenomena that are different from type-I Weyl systems. Here we construct the acoustic version of a type-II Weyl Hamiltonian by stacking one-dimensional dimerized chains of acoustic resonators. This acoustic type-II Weyl system exhibits distinct features in a finite density of states and unique transport properties of Fermi-arc-like surface states. In a certain momentum space direction, the velocity of these surface states is determined by the tilting direction of the type-II Weyl nodes rather than the chirality dictated by the Chern number. Our study also provides an approach of constructing acoustic topological phases at different dimensions with the same building blocks.

Quantum Heterogeneous Computing for Satellite Positioning Optimization

NASA Astrophysics Data System (ADS)

Bass, G.; Kumar, V.; Dulny, J., III

2016-12-01

Hard optimization problems occur in many fields of academic study and practical situations. We present results in which quantum heterogeneous computing is used to solve a real-world optimization problem: satellite positioning. Optimization problems like this can scale very rapidly with problem size, and become unsolvable with traditional brute-force methods. Typically, such problems have been approximately solved with heuristic approaches; however, these methods can take a long time to calculate and are not guaranteed to find optimal solutions. Quantum computing offers the possibility of producing significant speed-up and improved solution quality. There are now commercially available quantum annealing (QA) devices that are designed to solve difficult optimization problems. These devices have 1000+ quantum bits, but they have significant hardware size and connectivity limitations. We present a novel heterogeneous computing stack that combines QA and classical machine learning and allows the use of QA on problems larger than the quantum hardware could solve in isolation. We begin by analyzing the satellite positioning problem with a heuristic solver, the genetic algorithm. The classical computer's comparatively large available memory can explore the full problem space and converge to a solution relatively close to the true optimum. The QA device can then evolve directly to the optimal solution within this more limited space. Preliminary experiments, using the Quantum Monte Carlo (QMC) algorithm to simulate QA hardware, have produced promising results. Working with problem instances with known global minima, we find a solution within 8% in a matter of seconds, and within 5% in a few minutes. Future studies include replacing QMC with commercially available quantum hardware and exploring more problem sets and model parameters. Our results have important implications for how heterogeneous quantum computing can be used to solve difficult optimization problems in any field.

Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

2017-11-01

Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

Highly luminescent colloidal nanoplates of perovskite cesium lead halide and their oriented assemblies

DOE PAGES

Bekenstein, Yehonadav; Koscher, Brent A.; Eaton, Samuel W.; ...

2015-12-15

Anisotropic colloidal quasi-two-dimensional nanoplates (NPLs) hold great promise as functional materials due to their combination of low dimensional optoelectronic properties and versatility through colloidal synthesis. Recently, lead-halide perovskites have emerged as important optoelectronic materials with excellent efficiencies in photovoltaic and light-emitting applications. Here we report the synthesis of quantum confined all inorganic cesium lead halide nanoplates in the perovskite crystal structure that are also highly luminescent (PLQY 84%). The controllable self-assembly of nanoplates either into stacked columnar phases or crystallographic-oriented thin-sheet structures is demonstrated. Furthermore, the broad accessible emission range, high native quantum yields, and ease of self-assembly make perovskitemore » NPLs an ideal platform for fundamental optoelectronic studies and the investigation of future devices.« less

Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures

NASA Astrophysics Data System (ADS)

Niu, Yue; Frisenda, Riccardo; Svatek, Simon A.; Orfila, Gloria; Gallego, Fernando; Gant, Patricia; Agraït, Nicolás; Leon, Carlos; Rivera-Calzada, Alberto; Pérez De Lara, David; Santamaria, Jacobo; Castellanos-Gomez, Andres

2017-09-01

The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential number of combinations almost infinite. Among all these possible combinations, mixing 2D materials with transition metal oxides can result especially useful because of the large amount of interesting physical phenomena displayed separately by these two material families. We present a hybrid device based on the stacking of a single layer MoS2 onto a lanthanum strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin device. It shows a rectifying electrical transport with a ratio of 103, and a photovoltaic effect with V oc up to 0.4 V. The photodiode behaviour arises as a consequence of the different doping character of these two materials. This result paves the way towards combining the efforts of these two large materials science communities.

Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

2016-01-18

Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurementmore » revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.« less

Focusing metasurface quantum-cascade laser with a near diffraction-limited beam

DOE PAGES

Xu, Luyao; Chen, Daguan; Itoh, Tatsuo; ...

2016-10-17

A terahertz vertical-external-cavity surface-emitting-laser (VECSEL) is demonstrated using an active focusing reflectarray metasurface based on quantum-cascade gain material. The focusing effect enables a hemispherical cavity with flat optics, which exhibits higher geometric stability than a plano-plano cavity and a directive and circular near-diffraction limited Gaussian beam with M 2 beam parameter as low as 1.3 and brightness of 1.86 × 10 6 Wsr –1m –2. As a result, this work initiates the potential of leveraging inhomogeneous metasurface and reflectarray designs to achieve high-power and high-brightness terahertz quantum-cascade VECSELs.

Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Höfer, B.; Zhang, J.; Wildmann, J.; Zallo, E.; Trotta, R.; Ding, F.; Rastelli, A.; Schmidt, O. G.

2017-04-01

Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga)As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources.

Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E.; Dipartimento di Fisica, Universita di Roma 'Tor Vergata,' via della Ricerca Scientifica 1, 00133 Roma Italy; Arciprete, F.

2012-10-01

The transition from the liquid phase of Ga droplets to the formation of GaAs and GaMnAs quantum rings has been studied as a function of temperature. We show that different aggregation processes involve the GaAs (GaMnAs) island and the droplet formation. Furthermore, the aspect ratio of the islands exhibits an anomalous scaling law related to a tendency to aggregate in the vertical direction.

Quantum Anomalous Hall Effect in Low-buckled Honeycomb Lattice with In-plane Magnetization

NASA Astrophysics Data System (ADS)

Ren, Yafei; Pan, Hui; Yang, Fei; Li, Xin; Qiao, Zhenhua; Zhenhua Qiao's Group Team; Hui Pan's Group Team

With out-of-plane magnetization, the quantum anomalous Hall effect has been extensively studied in quantum wells and two-dimensional atomic crystal layers. Here, we investigate the possibility of realizing quantum anomalous Hall effect (QAHE) in honeycomb lattices with in-plane magnetization. We show that the QAHE can only occur in low-buckled honeycomb lattice where both intrinsic and intrinsic Rashba spin-orbit coupling appear spontaneously. The extrinsic Rashba spin-orbit coupling is detrimental to this phase. In contrast to the out-of-plane magnetization induced QAHE, the QAHE from in-plane magnetization is achieved in the vicinity of the time reversal symmetric momenta at M points rather than Dirac points. In monolayer case, the QAHE can be characterized by Chern number  = +/- 1 whereas additional phases with Chern number  = +/- 2 appear in chiral stacked bilayer system. The Chern number strongly depends on the orientation of the magnetization. The bilayer system also provides additional tunability via out-of-plane electric field, which can reduce the critical magnetization strength required to induce QAHE. It can also lead to topological phase transitions from  = +/- 2 to +/- 1 and finally to 0 Equal contribution from Yafei Ren and Hui Pan.

Cellular interaction influenced by surface modification strategies of gelatin-based nanoparticles.

PubMed

Tse, Wai Hei; Gyenis, Laszlo; Litchfield, David W; Zhang, Jin

2017-02-01

Theranostic applications of gelatin nanospheres require two major components, a method of detection and good biocompatibility. We characterized the response of UTA-6 human osteosarcoma cells to the introduction of functionalized 90 bloom-based gelatin nanospheres (158 ± 49 nm) modified with three elements in different order: (a) hybridization with cadmium-based quantum dots for optical detection, (b) bioconjugation with anti-human IgG FAB (anti-IgG) for cell targeting, with/without (c) capping with polyethylene glycol on the surface for enhanced biocompatibility. A one-pot process is developed for incorporating quantum dots and antibody with gelatin nanospheres. Path A of modifying gelatin nanospheres with quantum dots first followed by anti-IgG resulted in a significantly greater cellular viability than Path B with anti-IgG first followed by quantum dots. Capping with polyethylene glycol as the final step in modification yielded significantly opposing results with decreases in Path A and increases in Path B. Three-dimensional z-stacking fluorescent images of hybrid gelatin nanospheres with anti-IgG is observed to have an increase in cellular association. The observed results suggest the modification order for building hybrid nanospheres may have an impact on cellular response.

Model of biological quantum logic in DNA.

PubMed

Mihelic, F Matthew

2013-08-02

The DNA molecule has properties that allow it to act as a quantum logic processor. It has been demonstrated that there is coherent conduction of electrons longitudinally along the DNA molecule through pi stacking interactions of the aromatic nucleotide bases, and it has also been demonstrated that electrons moving longitudinally along the DNA molecule are subject to a very efficient electron spin filtering effect as the helicity of the DNA molecule interacts with the spin of the electron. This means that, in DNA, electrons are coherently conducted along a very efficient spin filter. Coherent electron spin is held in a logically and thermodynamically reversible chiral symmetry between the C2-endo and C3-endo enantiomers of the deoxyribose moiety in each nucleotide, which enables each nucleotide to function as a quantum gate. The symmetry break that provides for quantum decision in the system is determined by the spin direction of an electron that has an orbital angular momentum that is sufficient to overcome the energy barrier of the double well potential separating the C2-endo and C3-endo enantiomers, and that enantiomeric energy barrier is appropriate to the Landauer limit of the energy necessary to randomize one bit of information.

Simulation of Optical Resonators for Vertical-Cavity Surface-Emitting Lasers (vcsel)

NASA Astrophysics Data System (ADS)

Mansour, Mohy S.; Hassen, Mahmoud F. M.; El-Nozahey, Adel M.; Hafez, Alaa S.; Metry, Samer F.

2010-04-01

Simulation and modeling of the reflectivity and transmissivity of the multilayer DBR of VCSEL, as well as inside the active region quantum well are analyzed using the characteristic matrix method. The electric field intensity distributions inside such vertical-cavity structure are calculated. A software program under MATLAB environment is constructed for the simulation. This study was performed for two specific Bragg wavelengths 980 nm and 370 nm for achieving a resonant periodic gain (RPG)

Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study

NASA Astrophysics Data System (ADS)

Lanzillo, Nicholas A.; Restrepo, Oscar D.; Bhosale, Prasad S.; Cruz-Silva, Eduardo; Yang, Chih-Chao; Youp Kim, Byoung; Spooner, Terry; Standaert, Theodorus; Child, Craig; Bonilla, Griselda; Murali, Kota V. R. M.

2018-04-01

We present a combined theoretical and experimental study on the electron transport characteristics across several representative interface structures found in back-end-of-line interconnect stacks for advanced semiconductor manufacturing: Cu/Ta(N)/Co/Cu and Cu/Ta(N)/Ru/Cu. In particular, we evaluate the impact of replacing a thin TaN barrier with Ta while considering both Co and Ru as wetting layers. Both theory and experiment indicate a pronounced reduction in vertical resistance when replacing TaN with Ta, regardless of whether a Co or Ru wetting layer is used. This indicates that a significant portion of the total vertical resistance is determined by electron scattering at the Cu/Ta(N) interface. The electronic structure of these nano-sized interconnects is analyzed in terms of the atom-resolved projected density of states and k-resolved transmission spectra at the Fermi level. This work further develops a fundamental understanding of electron transport and material characteristics in nano-sized interconnects.

Direct Free Carrier Photogeneration in Single Layer and Stacked Organic Photovoltaic Devices.

PubMed

Chandran, Hrisheekesh Thachoth; Ng, Tsz-Wai; Foo, Yishu; Li, Ho-Wa; Qing, Jian; Liu, Xiao-Ke; Chan, Chiu-Yee; Wong, Fu-Lung; Zapien, Juan Antonio; Tsang, Sai-Wing; Lo, Ming-Fai; Lee, Chun-Sing

2017-06-01

High performance organic photovoltaic devices typically rely on type-II P/N junctions for assisting exciton dissociation. Heremans and co-workers recently reported a high efficiency device with a third organic layer which is spatially separated from the active P/N junction; but still contributes to the carrier generation by passing its energy to the P/N junction via a long-range exciton energy transfer mechanism. In this study the authors show that there is an additional mechanism contributing to the high efficiency. Some bipolar materials (e.g., subnaphthalocyanine chloride (SubNc) and subphthalocyanine chloride (SubPc)) are observed to generate free carriers much more effectively than typical organic semiconductors upon photoexcitation. Single-layer devices with SubNc or SubPc sandwiched between two electrodes can give power conversion efficiencies 30 times higher than those of reported single-layer devices. In addition, internal quantum efficiencies (IQEs) of bilayer devices with opposite stacking sequences (i.e., SubNc/SubPc vs SubPc/SubNc) are found to be the sum of IQEs of single layer devices. These results confirm that SubNc and SubPc can directly generate free carriers upon photoexcitation without assistance from a P/N junction. These allow them to be stacked onto each other with reversible sequence or simply stacking onto another P/N junction and contribute to the photocarrier generation. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Comparative study on stained InGaAs quantum wells for high-speed optical-interconnect VCSELs

NASA Astrophysics Data System (ADS)

Li, Hui; Jia, Xiaowei

2018-05-01

The gain-carrier characteristics of InGaAs quantum well for 980 nm high-speed, energy-efficient vertical-cavity surface-emitting lasers are investigated. We specially studied the potentially InGaAs quantum well designs can be used for the active region of energy-efficient, temperature-stable 980-nm VCSEL, which introduced a quantum well gain peak wavelength-to-cavity resonance wavelength offset to improve the dynamic performance at high operation temperature. Several candidate quantum wells are being compared in theory and measurement. We found that ∼5 nm InGaAs QW with ∼6 nm barrier thickness is suitable for the active region of high-speed optical interconnect 980 nm VCSELs, and no significant improvement in the 20% range of In content of InGaAs QWs. The results are useful for next generation green photonic device design.

Phase space dynamics and control of the quantum particles associated to hypergraph states

NASA Astrophysics Data System (ADS)

Berec, Vesna

2015-05-01

As today's nanotechnology focus becomes primarily oriented toward production and manipulation of materials at the subatomic level, allowing the performance and complexity of interconnects where the device density accepts more than hundreds devices on a single chip, the manipulation of semiconductor nanostructures at the subatomic level sets its prime tasks on preserving and adequate transmission of information encoded in specified (quantum) states. The presented study employs the quantum communication protocol based on the hypergraph network model where the numerical solutions of equations of motion of quantum particles are associated to vertices (assembled with device chip), which follow specific controllable paths in the phase space. We address these findings towards ultimate quest for prediction and selective control of quantum particle trajectories. In addition, presented protocols could represent valuable tool for reducing background noise and uncertainty in low-dimensional and operationally meaningful, scalable complex systems.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.

In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity wasmore » measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality with long term reliability of ZnO based transparent conducting oxides.« less

Regional Big Injun (Price/Pocono) subsurface stratigraphy of West Virginia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donaldson, A.C.; Zou, Xiangdong

1992-01-01

The lower Big Injun (Lower Mississippian) is the oil reservoir of the Granny Creek and Rock Creek fields and consists of multiple sandstones that were deposited in different fluvial-deltaic depositional environments. These multiple sandstones became amalgamated and now appear as a widespread blanket sandstone as a result of ancient cut and fill processes associated with river-channel sedimentation. The regional study of this Price Formation subsurface equivalent considers the continuity and thickness variations of the composite sandstones of the Big Injun mainly within western West Virginia. The major fluvial drainage system apparently flowed southward through Ohio (much of it later erodedmore » by the pre-Pottsville unconformity) during Big Injun time (and earlier) and part of the system was diverted into southwestern West Virginia as vertically stacked channel and river-mouth bar deposits (Rock Creek field). This ancient Ontario River system apparently drained a huge area including the northern craton as well as the orogenic belt. The emerging West Virginia Dome probably sourced the sediment transported by small rivers developing southwestward prograding deltas across Clay County (Granny Creek field). Sedimentation was affected by differential subsidence in the basin. Paleovalley fill was considered for areas with vertically stacked sandstones, but evidence for their origin is not convincing. Oil-reservoir sandstones are classified as dip-trending river channel (D1) and deltaic shoreline (D2) deposits.« less

Multiresonant Composite Optical Nanoantennas by Out-of-plane Plasmonic Engineering.

PubMed

Song, Junyeob; Zhou, Wei

2018-06-27

Optical nanoantennas can concentrate light and enhance light-matter interactions in subwavelength domain, which is useful for photodetection, light emission, optical biosensing, and spectroscopy. However, conventional optical nanoantennas operating at a single wavelength band are not suitable for multiband applications. Here, we propose and exploit an out-of-plane plasmonic engineering strategy to design and create composite optical nanoantennas that can support multiple nanolocalized modes at different resonant wavelengths. These multiresonant composite nanoantennas are composed of vertically stacked building blocks of metal-insulator-metal loop nanoantennas. Studies of multiresonant composite nanoantennas demonstrate that the number of supported modes depends on the number of vertically stacked building blocks and the resonant wavelengths of individual modes are tunable by controlling the out-of-plane geometries of their building blocks. In addition, numerical studies show that the resonant wavelengths of individual modes in composite nanoantennas can deviate from the optical response of building blocks due to hybridization of magnetic modes in neighboring building blocks. Using Au nanohole arrays as deposition masks to fabricate arrays of multilayered composite nanoantennas, we experimentally demonstrate their multiresonant optical properties in good agreement with theory predictions. These studies show that out-of-plane engineered multiresonant composite nanoantennas can provide new opportunities for fundamental nanophotonics research and practical applications involving optical multiband operations, such as multiphoton process, broadband solar energy conversion, and wavelength-multiplexed optical system.

The Effect of Predicted Vehicle Displacement on Ground Crew Task Performance and Hardware Design

NASA Technical Reports Server (NTRS)

Atencio, Laura Ashley; Reynolds, David W.

2011-01-01

NASA continues to explore new launch vehicle concepts that will carry astronauts to low- Earth orbit to replace the soon-to-be retired Space Transportation System (STS) shuttle. A tall vertically stacked launch vehicle (> or =300 ft) is exposed to the natural environment while positioned on the launch pad. Varying directional winds and vortex shedding cause the vehicle to sway in an oscillating motion. Ground crews working high on the tower and inside the vehicle during launch preparations will be subjected to this motion while conducting critical closeout tasks such as mating fluid and electrical connectors and carrying heavy objects. NASA has not experienced performing these tasks in such environments since the Saturn V, which was serviced from a movable (but rigid) service structure; commercial launchers are likewise attended by a service structure that moves away from the vehicle for launch. There is concern that vehicle displacement may hinder ground crew operations, impact the ground system designs, and ultimately affect launch availability. The vehicle sway assessment objective is to replicate predicted frequencies and displacements of these tall vehicles, examine typical ground crew tasks, and provide insight into potential vehicle design considerations and ground crew performance guidelines. This paper outlines the methodology, configurations, and motion testing performed while conducting the vehicle displacement assessment that will be used as a Technical Memorandum for future vertically stacked vehicle designs.

A vertically-stacked, polymer, microfluidic point mutation analyzer: Rapid, high accuracy detection of low-abundance K-ras mutations

PubMed Central

Han, Kyudong; Lee, Tae Yoon; Nikitopoulos, Dimitris E.; Soper, Steven A.; Murphy, Michael C.

2011-01-01

Recognition of point mutations in the K-ras gene can be used for the clinical management of several types of cancers. Unfortunately, several assay and hardware concerns must be addressed to allow users not well-trained in performing molecular analyses the opportunity to undertake these measurements. To provide for a larger user-base for these types of molecular assays, a vertically-stacked microfluidic analyzer with a modular architecture and process automation was developed. The analyzer employed a primary PCR coupled to an allele-specific ligase detection reaction (LDR). Each functional device, including continuous flow thermal reactors for the PCR and LDR, passive micromixers and ExoSAP-IT® purification, was designed and tested. Individual devices were fabricated in polycarbonate using hot embossing and assembled using adhesive bonding for system assembly. The system produced LDR products from a DNA sample in ~1 h, an 80% reduction in time compared to conventional bench-top instrumentation. Purifying the post-PCR products with the ExoSAP-IT® enzyme led to optimized LDR performance minimizing false positive signals and producing reliable results. Mutant alleles in genomic DNA were quantified to the level of 0.25 ng of mutant DNA in 50 ng of wild-type DNA for a 25 μL sample, equivalent to DNA from 42 mutant cells. PMID:21771577

Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Liudi Mulyo, Andreas; Konno, Yuta; Nilsen, Julie S.; van Helvoort, Antonius T. J.; Fimland, Bjørn-Ove; Weman, Helge; Kishino, Katsumi

2017-12-01

We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. At optimum growth conditions, GaN nanocolumns are vertically aligned and well separated with an average diameter, height and density of 72 nm, 1.2 μm and 1.6 × 109 cm-2, respectively. The nanocolumns exhibit wurtzite crystal structure with no threading dislocations, stacking faults or twinning and grow in the [0 0 0 1] direction. At the interface adjacent to the glass, there is a few atom layers thick intermediate phase with ABC stacking order (zinc blende). Photoluminescence measurements evidence intense and narrow excitonic emissions, along with the absence of any defect-related zinc blende and yellow luminescence emission.

Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

PubMed

Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

2017-11-01

In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

Energy absorption ability of buckyball C720 at low impact speed: a numerical study based on molecular dynamics

PubMed Central

2013-01-01

The dynamic impact response of giant buckyball C720 is investigated by using molecular dynamics simulations. The non-recoverable deformation of C720 makes it an ideal candidate for high-performance energy absorption. Firstly, mechanical behaviors under dynamic impact and low-speed crushing are simulated and modeled, which clarifies the buckling-related energy absorption mechanism. One-dimensional C720 arrays (both vertical and horizontal alignments) are studied at various impact speeds, which show that the energy absorption ability is dominated by the impact energy per buckyball and less sensitive to the number and arrangement direction of buckyballs. Three-dimensional stacking of buckyballs in simple cubic, body-centered cubic, hexagonal, and face-centered cubic forms are investigated. Stacking form with higher occupation density yields higher energy absorption. The present study may shed lights on employing C720 assembly as an advanced energy absorption system against low-speed impacts. PMID:23360618

Opportunities for shear energy scaling in bulk acoustic wave resonators.

PubMed

Jose, Sumy; Hueting, Raymond J E

2014-10-01

An important energy loss contribution in bulk acoustic wave resonators is formed by so-called shear waves, which are transversal waves that propagate vertically through the devices with a horizontal motion. In this work, we report for the first time scaling of the shear-confined spots, i.e., spots containing a high concentration of shear wave displacement, controlled by the frame region width at the edge of the resonator. We also demonstrate a novel methodology to arrive at an optimum frame region width for spurious mode suppression and shear wave confinement. This methodology makes use of dispersion curves obtained from finite-element method (FEM) eigenfrequency simulations for arriving at an optimum frame region width. The frame region optimization is demonstrated for solidly mounted resonators employing several shear wave optimized reflector stacks. Finally, the FEM simulation results are compared with measurements for resonators with Ta2O5/ SiO2 stacks showing suppression of the spurious modes.

A Methodology to Validate the InSAR Derived Displacement Field of the September 7th, 1999 Athens Earthquake Using Terrestrial Surveying. Improvement of the Assessed Deformation Field by Interferometric Stacking.

PubMed

Kotsis, Ioannis; Kontoes, Charalabos; Paradissis, Dimitrios; Karamitsos, Spyros; Elias, Panagiotis; Papoutsis, Ioannis

2008-06-10

The primary objective of this paper is the evaluation of the InSAR derived displacement field caused by the 07/09/1999 Athens earthquake, using as reference an external data source provided by terrestrial surveying along the Mornos river open aqueduct. To accomplish this, a processing chain to render comparable the leveling measurements and the interferometric derived measurements has been developed. The distinct steps proposed include a solution for reducing the orbital and atmospheric interferometric fringes and an innovative method to compute the actual InSAR estimated vertical ground subsidence, for direct comparison with the leveling data. Results indicate that the modeled deformation derived from a series of stacked interferograms, falls entirely within the confidence interval assessed for the terrestrial surveying data.

A Methodology to Validate the InSAR Derived Displacement Field of the September 7th, 1999 Athens Earthquake Using Terrestrial Surveying. Improvement of the Assessed Deformation Field by Interferometric Stacking

PubMed Central

Kotsis, Ioannis; Kontoes, Charalabos; Paradissis, Dimitrios; Karamitsos, Spyros; Elias, Panagiotis; Papoutsis, Ioannis

2008-01-01

The primary objective of this paper is the evaluation of the InSAR derived displacement field caused by the 07/09/1999 Athens earthquake, using as reference an external data source provided by terrestrial surveying along the Mornos river open aqueduct. To accomplish this, a processing chain to render comparable the leveling measurements and the interferometric derived measurements has been developed. The distinct steps proposed include a solution for reducing the orbital and atmospheric interferometric fringes and an innovative method to compute the actual InSAR estimated vertical ground subsidence, for direct comparison with the leveling data. Results indicate that the modeled deformation derived from a series of stacked interferograms, falls entirely within the confidence interval assessed for the terrestrial surveying data. PMID:27879926

Remaining Sites Verification Package for the 100-F-46, 119-F Stack Sampling French Drain, Waste Site Reclassification Form 2008-021

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. M. Capron

2008-08-08

The 100-F-46 french drain consisted of a 1.5 to 3 m long, vertically buried, gravel-filled pipe that was approximately 1 m in diameter. Also included in this waste site was a 5 cm cast-iron pipeline that drained condensate from the 119-F Stack Sampling Building into the 100-F-46 french drain. In accordance with this evaluation, the confirmatory sampling results support a reclassification of this site to No Action. The current site conditions achieve the remedial action objectives and the corresponding remedial action goals established in the Remaining Sites ROD. The results of confirmatory sampling show that residual contaminant concentrations do notmore » preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River.« less

Electric-Field-Induced Energy Tuning of On-Demand Entangled-Photon Emission from Self-Assembled Quantum Dots.

PubMed

Zhang, Jiaxiang; Zallo, Eugenio; Höfer, Bianca; Chen, Yan; Keil, Robert; Zopf, Michael; Böttner, Stefan; Ding, Fei; Schmidt, Oliver G

2017-01-11

We explore a method to achieve electrical control over the energy of on-demand entangled-photon emission from self-assembled quantum dots (QDs). The device used in our work consists of an electrically tunable diode-like membrane integrated onto a piezoactuator, which is capable of exerting a uniaxial stress on QDs. We theoretically reveal that, through application of the quantum-confined Stark effect to QDs by a vertical electric field, the critical uniaxial stress used to eliminate the fine structure splitting of QDs can be linearly tuned. This feature allows experimental realization of a triggered source of energy-tunable entangled-photon emission. Our demonstration represents an important step toward realization of a solid-state quantum repeater using indistinguishable entangled photons in Bell state measurements.

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, Subhash

1999-01-01

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Continuous-Time Classical and Quantum Random Walk on Direct Product of Cayley Graphs

NASA Astrophysics Data System (ADS)

Salimi, S.; Jafarizadeh, M. A.

2009-06-01

In this paper we define direct product of graphs and give a recipe for obtaining probability of observing particle on vertices in the continuous-time classical and quantum random walk. In the recipe, the probability of observing particle on direct product of graph is obtained by multiplication of probability on the corresponding to sub-graphs, where this method is useful to determining probability of walk on complicated graphs. Using this method, we calculate the probability of continuous-time classical and quantum random walks on many of finite direct product Cayley graphs (complete cycle, complete Kn, charter and n-cube). Also, we inquire that the classical state the stationary uniform distribution is reached as t → ∞ but for quantum state is not always satisfied.

Remote measurement of atmospheric pollutants

NASA Technical Reports Server (NTRS)

Allario, F.; Hoell, J.; Seals, R. K.

1979-01-01

The concentration and vertical distribution of atmospheric ammonia and ozone are remotely sensed, using dual-C02-laser multichannel infrared Heterodyne Spectrometer (1HS). Innovation makes atmospheric pollution measurements possible with nearly-quantum-noise-limited sensitivity and ultrafine spectral resolution.

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers.

PubMed

Tandoi, Giuseppe; Ironside, Charles N; Marsh, John H; Bryce, A Catrina

2012-03-01

We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.

The spectra of rectangular lattices of quantum waveguides

NASA Astrophysics Data System (ADS)

Nazarov, S. A.

2017-02-01

We obtain asymptotic formulae for the spectral segments of a thin (h\\ll 1) rectangular lattice of quantum waveguides which is described by a Dirichlet problem for the Laplacian. We establish that the structure of the spectrum of the lattice is incorrectly described by the commonly accepted quantum graph model with the traditional Kirchhoff conditions at the vertices. It turns out that the lengths of the spectral segments are infinitesimals of order O(e-δ/h), δ> 0, and O(h) as h\\to+0, and gaps of width O(h-2) and O(1) arise between them in the low- frequency and middle- frequency spectral ranges respectively. The first spectral segment is generated by the (unique) eigenvalue in the discrete spectrum of an infinite cross-shaped waveguide \\Theta. The absence of bounded solutions of the problem in \\Theta at the threshold frequency means that the correct model of the lattice is a graph with Dirichlet conditions at the vertices which splits into two infinite subsets of identical edges- intervals. By using perturbations of finitely many joints, we construct any given number of discrete spectrum points of the lattice below the essential spectrum as well as inside the gaps.

High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate.

PubMed

Muhammed, Mufasila M; Alwadai, Norah; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S

2017-10-04

We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga 2 O 3 ) substrate, obtained using a straightforward growth process that does not require a high-cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multiquantum well (MQW) grown on the masked β-Ga 2 O 3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ∼86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers

PubMed Central

Tandoi, Giuseppe; Ironside, Charles N.; Marsh, John H.; Bryce, A. Catrina

2013-01-01

We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 μm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers. PMID:23843678