Linear and nonlinear equivalent circuit modeling of CMUTs.

PubMed

Lohfink, Annette; Eccardt, Peter-Christian

2005-12-01

Using piston radiator and plate capacitance theory capacitive micromachined ultrasound transducers (CMUT) membrane cells can be described by one-dimensional (1-D) model parameters. This paper describes in detail a new method, which derives a 1-D model for CMUT arrays from finite-element methods (FEM) simulations. A few static and harmonic FEM analyses of a single CMUT membrane cell are sufficient to derive the mechanical and electrical parameters of an equivalent piston as the moving part of the cell area. For an array of parallel-driven cells, the acoustic parameters are derived as a complex mechanical fluid impedance, depending on the membrane shape form. As a main advantage, the nonlinear behavior of the CMUT can be investigated much easier and faster compared to FEM simulations, e.g., for a design of the maximum applicable voltage depending on the input signal. The 1-D parameter model allows an easy description of the CMUT behavior in air and fluids and simplifies the investigation of wave propagation within the connecting fluid represented by FEM or transmission line matrix (TLM) models.

Design and analysis of optimised class E power amplifier using shunt capacitance in the output structure

NASA Astrophysics Data System (ADS)

Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza

2017-05-01

In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.

Nonlinear dynamics of capacitive charging and desalination by porous electrodes.

PubMed

Biesheuvel, P M; Bazant, M Z

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the "supercapacitor regime" of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the "desalination regime" of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

Nonlinear dynamics of capacitive charging and desalination by porous electrodes

NASA Astrophysics Data System (ADS)

Biesheuvel, P. M.; Bazant, M. Z.

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the “supercapacitor regime” of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the “desalination regime” of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

New experimental techniques for solar cells

NASA Technical Reports Server (NTRS)

Lenk, R.

1993-01-01

Solar cell capacitance has special importance for an array controlled by shunting. Experimental measurements of solar cell capacitance in the past have shown disagreements of orders of magnitude. Correct measurement technique depends on maintaining the excitation voltage less than the thermal voltage. Two different experimental methods are shown to match theory well, and two effective capacitances are defined for quantifying the effect of the solar cell capacitance on the shunting system.

Modeling, numerical simulation, and nonlinear dynamic behavior analysis of PV microgrid-connected inverter with capacitance catastrophe

NASA Astrophysics Data System (ADS)

Li, Sichen; Liao, Zhixian; Luo, Xiaoshu; Wei, Duqu; Jiang, Pinqun; Jiang, Qinghong

2018-02-01

The value of the output capacitance (C) should be carefully considered when designing a photovoltaic (PV) inverter since it can cause distortion in the working state of the circuit, and the circuit produces nonlinear dynamic behavior. According to Kirchhoff’s laws and the characteristics of an ideal operational amplifier for a strict piecewise linear state equation, a circuit simulation model is constructed to study the system parameters (time, C) for the current passing through an inductor with an inductance of L and the voltage across the capacitor with a capacitance of C. The developed simulation model uses Runge-Kutta methods to solve the state equations. This study focuses on predicting the fault of the circuit from the two aspects of the harmonic distortion and simulation results. Moreover, the presented model is also used to research the working state of the system in the case of a load capacitance catastrophe. The nonlinear dynamic behaviors in the inverter are simulated and verified.

Characteristics of arc currents on a negatively biased solar cell array in a plasma

NASA Technical Reports Server (NTRS)

Snyder, D. B.

1984-01-01

The time dependence of the emitted currents during arcing on solar cell arrays is being studied. The arcs are characterized using three parameters: the voltage change of the array during the arc (i.e., the charge lost), the peak current during the arc, and the time constant describing the arc current. This paper reports the dependence of these characteristics on two array parameters, the interconnect bias voltage and the array capacitance to ground. It was found that the voltage change of the array during an arc is nearly equal to the bias voltage. The array capacitance, on the other hand, influences both the peak current and the decay time constant of the arc. Both of these characteristics increase with increasing capacitance.

Moderately nonlinear diffuse-charge dynamics under an ac voltage.

PubMed

Stout, Robert F; Khair, Aditya S

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

PubMed

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-08-19

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF.

Piezoelectric Power Requirements for Active Vibration Control

NASA Technical Reports Server (NTRS)

Brennan, Matthew C.; McGowan, Anna-Maria Rivas

1997-01-01

This paper presents a method for predicting the power consumption of piezoelectric actuators utilized for active vibration control. Analytical developments and experimental tests show that the maximum power required to control a structure using surface-bonded piezoelectric actuators is independent of the dynamics between the piezoelectric actuator and the host structure. The results demonstrate that for a perfectly-controlled system, the power consumption is a function of the quantity and type of piezoelectric actuators and the voltage and frequency of the control law output signal. Furthermore, as control effectiveness decreases, the power consumption of the piezoelectric actuators decreases. In addition, experimental results revealed a non-linear behavior in the material properties of piezoelectric actuators. The material non- linearity displayed a significant increase in capacitance with an increase in excitation voltage. Tests show that if the non-linearity of the capacitance was accounted for, a conservative estimate of the power can easily be determined.

Resistive and Capacitive Memory Effects in Oxide Insulator/ Oxide Conductor Hetero-Structures

NASA Astrophysics Data System (ADS)

Meyer, Rene; Miao, Maosheng; Wu, Jian; Chevallier, Christophe

2013-03-01

We report resistive and capacitive memory effects observed in oxide insulator/ oxide conductor hetero-structures. Electronic transport properties of Pt/ZrO2/PCMO/Pt structures with ZrO2 thicknesses ranging from 20A to 40A are studied before and after applying short voltage pulses of positive and negative polarity for set and reset operation. As processed devices display a non-linear IV characteristic which we attribute to trap assisted tunneling through the ZrO2 tunnel oxide. Current scaling with electrode area and tunnel oxide thickness confirms uniform conduction. The set/reset operation cause an up/down shift of the IV characteristic indicating that the conduction mechanism of both states is still dominated by tunneling. A change in the resistance is associated with a capacitance change of the device. An exponential relation between program voltages and set times is found. A model based on electric field mediated non-linear transport of oxygen ions across the ZrO2/PCMO interface is proposed. The change in the tunnel current is explained by ionic charge transfer between tunnel oxide and conductive metal oxide changing both tunnel barrier height and PCMO conductivity. DFT techniques are employed to explain the conductivity change in the PCMO interfacial layer observed through capacitance measurements.

Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

Electrical Properties and Power Considerations of a Piezoelectric Actuator

NASA Technical Reports Server (NTRS)

Jordan, T.; Ounaies, Z.; Tripp, J.; Tcheng, P.

1999-01-01

This paper assesses the electrical characteristics of piezoelectric wafers for use in aeronautical applications such as active noise control in aircraft. Determination of capacitive behavior and power consumption is necessary to optimize the system configuration and to design efficient driving electronics. Empirical relations are developed from experimental data to predict the capacitance and loss tangent of a PZT5A ceramic as nonlinear functions of both applied peak voltage and driving frequency. Power consumed by the PZT is the rate of energy required to excite the piezoelectric system along with power dissipated due to dielectric loss and mechanical and structural damping. Overall power consumption is thus quantified as a function of peak applied voltage and driving frequency. It was demonstrated that by incorporating the variation of capacitance and power loss with voltage and frequency, satisfactory estimates of power requirements can be obtained. These relations allow general guidelines in selection and application of piezoelectric actuators and driving electronics for active control applications.

An Energy Saving Green Plug Device for Nonlinear Loads

NASA Astrophysics Data System (ADS)

Bloul, Albe; Sharaf, Adel; El-Hawary, Mohamed

2018-03-01

The paper presents a low cost a FACTS Based flexible fuzzy logic based modulated/switched tuned arm filter and Green Plug compensation (SFC-GP) scheme for single-phase nonlinear loads ensuring both voltage stabilization and efficient energy utilization. The new Green Plug-Switched filter compensator SFC modulated LC-Filter PWM Switched Capacitive Compensation Devices is controlled using a fuzzy logic regulator to enhance power quality, improve power factor at the source and reduce switching transients and inrush current conditions as well harmonic contents in source current. The FACTS based SFC-GP Device is a member of family of Green Plug/Filters/Compensation Schemes used for efficient energy utilization, power quality enhancement and voltage/inrush current/soft starting control using a dynamic error driven fuzzy logic controller (FLC). The device with fuzzy logic controller is validated using the Matlab / Simulink Software Environment for enhanced power quality (PQ), improved power factor and reduced inrush currents. This is achieved using modulated PWM Switching of the Filter-Capacitive compensation scheme to cope with dynamic type nonlinear and inrush cyclical loads..

Non-linear lumped model circuit of capacitively coupled plasmas at the intermediate radio-frequencies

NASA Astrophysics Data System (ADS)

Shihab, Mohammed

2018-06-01

The discharge dynamics in geometrically asymmetric capacitively coupled plasmas are investigated via a lumped model circuit. A realistic reactor configuration is assumed. A single and two separate RF voltage sources are considered. One of the driven frequencies (the higher frequency) has been adjusted to excite a plasma series resonance, while the second frequency (the lower frequency) is in the range of the ion plasma frequency. Increasing the plasma pressure in the low pressure regime (≤ 100mTorr) is found to diminish the amplitude of the self-excited harmonics of the discharge current, however, the net result is enhancing the plasma heating. The modulation of the ion density with the lower driving frequency affect the plasma heating considerably. The net effect depends on the amplitude and the phase of the ion modulation.

A Integrated Circuit for a Biomedical Capacitive Pressure Transducer

NASA Astrophysics Data System (ADS)

Smith, Michael John Sebastian

Medical research has an urgent need for a small, accurate, stable, low-power, biocompatible and inexpensive pressure sensor with a zero to full-scale range of 0-300 mmHg. An integrated circuit (IC) for use with a capacitive pressure transducer was designed, built and tested. The random pressure measurement error due to resolution and non-linearity is (+OR-)0.4 mmHg (at mid-range with a full -scale of 300 mmHg). The long-term systematic error due to falling battery voltage is (+OR-)0.6 mmHg. These figures were calculated from measurements of temperature, supply dependence and non-linearity on completed integrated circuits. The sensor IC allows measurement of temperature to (+OR-)0.1(DEGREES)C to allow for temperature compensation of the transducer. Novel micropower circuit design of the system components enabled these levels of accuracy to be reached. Capacitance is measured by a new ratiometric scheme employing an on -chip reference capacitor. This method greatly reduces the effects of voltage supply, temperature and manufacturing variations on the sensor circuit performance. The limits on performance of the bandgap reference circuit fabricated with a standard bipolar process using ion-implanted resistors were determined. Measurements confirm the limits of temperature stability as approximately (+OR-)300 ppm/(DEGREES)C. An exact analytical expression for the period of the Schmitt trigger oscillator, accounting for non-constant capacitor charging current, was formulated. Experiments to test agreement with theory showed that prediction of the oscillator period was very accurate. The interaction of fundamental and practical limits on the scaling of the transducer size was investigated including a correction to previous theoretical analysis of jitter in an RC oscillator. An areal reduction of 4 times should be achievable.

Coulomb Blockade in a Two-Dimensional Conductive Polymer Monolayer.

PubMed

Akai-Kasaya, M; Okuaki, Y; Nagano, S; Mitani, T; Kuwahara, Y

2015-11-06

Electronic transport was investigated in poly(3-hexylthiophene-2,5-diyl) monolayers. At low temperatures, nonlinear behavior was observed in the current-voltage characteristics, and a nonzero threshold voltage appeared that increased with decreasing temperature. The current-voltage characteristics could be best fitted using a power law. These results suggest that the nonlinear conductivity can be explained using a Coulomb blockade (CB) mechanism. A model is proposed in which an isotropic extended charge state exists, as predicted by quantum calculations, and percolative charge transport occurs within an array of small conductive islands. Using quantitatively evaluated capacitance values for the islands, this model was found to be capable of explaining the observed experimental data. It is, therefore, suggested that percolative charge transport based on the CB effect is a significant factor giving rise to nonlinear conductivity in organic materials.

From solitons to rogue waves in nonlinear left-handed metamaterials.

PubMed

Shen, Yannan; Kevrekidis, P G; Veldes, G P; Frantzeskakis, D J; DiMarzio, D; Lan, X; Radisic, V

2017-03-01

In the present work, we explore soliton and roguelike wave solutions in the transmission line analog of a nonlinear left-handed metamaterial. The nonlinearity is expressed through a voltage-dependent, symmetric capacitance motivated by recently developed ferroelectric barium strontium titanate thin-film capacitor designs. We develop both the corresponding nonlinear dynamical lattice and its reduction via a multiple scales expansion to a nonlinear Schrödinger (NLS) model for the envelope of a given carrier wave. The reduced model can feature either a focusing or a defocusing nonlinearity depending on the frequency (wave number) of the carrier. We then consider the robustness of different types of solitary waves of the reduced model within the original nonlinear left-handed medium. We find that both bright and dark solitons persist in a suitable parametric regime, where the reduction to the NLS model is valid. Additionally, for suitable initial conditions, we observe a rogue wave type of behavior that differs significantly from the classic Peregrine rogue wave evolution, including most notably the breakup of a single Peregrine-like pattern into solutions with multiple wave peaks. Finally, we touch upon the behavior of generalized members of the family of the Peregrine solitons, namely, Akhmediev breathers and Kuznetsov-Ma solitons, and explore how these evolve in the left-handed transmission line.

Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor

NASA Astrophysics Data System (ADS)

Yang, Paul; Kim, Hyung Jun; Zheng, Hong; Beom, Geon Won; Park, Jong-Sung; Kang, Chi Jung; Yoon, Tae-Sik

2017-06-01

A synaptic transistor emulating the biological synaptic motion is demonstrated using the memcapacitance characteristics in a Pt/HfOx/n-indium-gallium-zinc-oxide (IGZO) memcapacitor. First, the metal-oxide-semiconductor (MOS) capacitor with Pt/HfOx/n-IGZO structure exhibits analog, polarity-dependent, and reversible memcapacitance in capacitance-voltage (C-V), capacitance-time (C-t), and voltage-pulse measurements. When a positive voltage is applied repeatedly to the Pt electrode, the accumulation capacitance increases gradually and sequentially. The depletion capacitance also increases consequently. The capacitances are restored by repeatedly applying a negative voltage, confirming the reversible memcapacitance. The analog and reversible memcapacitance emulates the potentiation and depression synaptic motions. The synaptic thin-film transistor (TFT) with this memcapacitor also shows the synaptic motion with gradually increasing drain current by repeatedly applying the positive gate and drain voltages and reversibly decreasing one by applying the negative voltages, representing synaptic weight modulation. The reversible and analog conductance change in the transistor at both the voltage sweep and pulse operations is obtained through the memcapacitance and threshold voltage shift at the same time. These results demonstrate the synaptic transistor operations with a MOS memcapacitor gate stack consisting of Pt/HfOx/n-IGZO.

Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor.

PubMed

Yang, Paul; Jun Kim, Hyung; Zheng, Hong; Won Beom, Geon; Park, Jong-Sung; Jung Kang, Chi; Yoon, Tae-Sik

2017-06-02

A synaptic transistor emulating the biological synaptic motion is demonstrated using the memcapacitance characteristics in a Pt/HfOx/n-indium-gallium-zinc-oxide (IGZO) memcapacitor. First, the metal-oxide-semiconductor (MOS) capacitor with Pt/HfOx/n-IGZO structure exhibits analog, polarity-dependent, and reversible memcapacitance in capacitance-voltage (C-V), capacitance-time (C-t), and voltage-pulse measurements. When a positive voltage is applied repeatedly to the Pt electrode, the accumulation capacitance increases gradually and sequentially. The depletion capacitance also increases consequently. The capacitances are restored by repeatedly applying a negative voltage, confirming the reversible memcapacitance. The analog and reversible memcapacitance emulates the potentiation and depression synaptic motions. The synaptic thin-film transistor (TFT) with this memcapacitor also shows the synaptic motion with gradually increasing drain current by repeatedly applying the positive gate and drain voltages and reversibly decreasing one by applying the negative voltages, representing synaptic weight modulation. The reversible and analog conductance change in the transistor at both the voltage sweep and pulse operations is obtained through the memcapacitance and threshold voltage shift at the same time. These results demonstrate the synaptic transistor operations with a MOS memcapacitor gate stack consisting of Pt/HfOx/n-IGZO.

Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

NASA Astrophysics Data System (ADS)

Michailow, Wladislaw; Schülein, Florian J. R.; Möller, Benjamin; Preciado, Edwin; Nguyen, Ariana E.; von Son, Gretel; Mann, John; Hörner, Andreas L.; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

2017-01-01

We have measured both the current-voltage ( ISD - VGS ) and capacitance-voltage (C- VGS ) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured ISD - VGS characteristics over the entire range of VGS . Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Study of HV Dielectrics for High Frequency Operation in Linear & Nonlinear Transmission Lines & Simulation & Development of Hybrid Nonlinear Lines for RF Generation

DTIC Science & Technology

2015-08-27

applied reverse voltage [8], [9]. In this report, the experimental results of a varactor diode NLTL built with 30 sections are presented. Besides, Spice ...capacitive line (NLCL) using commercial BT and PZT ceramic capacitors. Corresponding NLCL Spice simulation is provided for comparison with experimental...the output pulse. In special for PZT, Spice simulation of a line with respective linear capacitors illustrates its weak nonlinearity as the

Study of HV Dielectrics for High Frequency Operation in Linear and Nonlinear Transmission Lines (NLTLs) and Simulation and Development of Hybrid Nonlinear Lines for RF Generation

DTIC Science & Technology

2016-01-27

presented. Besides, Spice simulation provides an excellent way of studying the NLTL principle operation by comparing them with the experimental...high voltage nonlinear capacitive line (NLCL) using commercial BT and PZT ceramic capacitors. Corresponding NLCL Spice simulation is provided for...which causes a long tail on the output pulse. In special for PZT, Spice simulation of a line with respective linear capacitors illustrates its weak

Calibration of Voltage Transformers and High- Voltage Capacitors at NIST

PubMed Central

Anderson, William E.

1989-01-01

The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

NASA Astrophysics Data System (ADS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-06-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr0.52Ti0.48)-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (gm-Vg) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Voltage and frequency dependence of prestin-associated charge transfer

PubMed Central

Sun, Sean X.; Farrell, Brenda; Chana, Matthew S.; Oster, George; Brownell, William E.; Spector, Alexander A.

2009-01-01

Membrane protein prestin is a critical component of the motor complex that generates forces and dimensional changes in cells in response to changes in the cell membrane potential. In its native cochlear outer hair cell, prestin is crucial to the amplification and frequency selectivity of the mammalian ear up to frequencies of tens of kHz. Other cells transfected with prestin acquire voltage-dependent properties similar to those of the native cell. The protein performance is critically dependent on chloride ions, and intrinsic protein charges also play a role. We propose an electro-diffusion model to reveal the frequency and voltage dependence of electric charge transfer by prestin. The movement of the combined charge (i.e., anion and protein charges) across the membrane is described with a Fokker-Planck equation coupled to a kinetic equation that describes the binding of chloride ions to prestin. We found a voltage-and frequency-dependent phase shift between the transferred charge and the applied electric field that determines capacitive and resistive components of the transferred charge. The phase shift monotonically decreases from zero to -90 degree as a function of frequency. The capacitive component as a function of voltage is bell-shaped, and decreases with frequency. The resistive component is bell-shaped for both voltage and frequency. The capacitive and resistive components are similar to experimental measurements of charge transfer at high frequencies. The revealed nature of the transferred charge can help reconcile the high-frequency electrical and mechanical observations associated with prestin, and it is important for further analysis of the structure and function of this protein. PMID:19490917

Solutions for transients in arbitrarily branching cables: III. Voltage clamp problems.

PubMed

Major, G

1993-07-01

Branched cable voltage recording and voltage clamp analytical solutions derived in two previous papers are used to explore practical issues concerning voltage clamp. Single exponentials can be fitted reasonably well to the decay phase of clamped synaptic currents, although they contain many underlying components. The effective time constant depends on the fit interval. The smoothing effects on synaptic clamp currents of dendritic cables and series resistance are explored with a single cylinder + soma model, for inputs with different time courses. "Soma" and "cable" charging currents cannot be separated easily when the soma is much smaller than the dendrites. Subtractive soma capacitance compensation and series resistance compensation are discussed. In a hippocampal CA1 pyramidal neurone model, voltage control at most dendritic sites is extremely poor. Parameter dependencies are illustrated. The effects of series resistance compound those of dendritic cables and depend on the "effective capacitance" of the cell. Plausible combinations of parameters can cause order-of-magnitude distortions to clamp current waveform measures of simulated Schaeffer collateral inputs. These voltage clamp problems are unlikely to be solved by the use of switch clamp methods.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Tao; Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016; Xu, Ruimin

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectricmore » constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.« less

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity

NASA Astrophysics Data System (ADS)

Hartmanová, Mária; Nádaždy, Vojtech; Kundracik, František; Mansilla, Catina

2013-03-01

Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance-voltage and current-voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.

Electrical characteristics of pentacene-based Schottky diodes

NASA Astrophysics Data System (ADS)

Lee, Y. S.; Park, J. H.; Choi, J. S.

2003-01-01

The current-voltage ( I-V), capacitance-frequency ( C-f), and capacitance-voltage ( C-V) characteristics of organic diodes with a pentacene/aluminum Sckottky contact have been investigated. From the measured diode capacitances, it is revealed that the frequency-dependent properties are related to the localized traps in the band gap of pentacene. The C-V characteristics for different test frequencies are presented. In the low frequency region, the capacitance is nearly constant with reverse bias and increase with the forward bias. With even higher forward bias, the capacitance gradually decreases, which is due to the detrapping of the trapped charges. The intrinsic charge carrier concentration in pentacene was extracted as 3.1×10 17 cm -3 from the C-V characteristics. The C-V properties of the pentacene-based metal-oxide-semiconductor structure have also studied.

Mobile patient monitoring based on impedance-loaded SAW-sensors.

PubMed

Karilainen, Anna; Finnberg, Thomas; Uelzen, Thorsten; Dembowski, Klaus; Müller, Jörg

2004-11-01

A remotely requestable, passive, short-range sensor network for measuring small voltages is presented. The sensor system is able to simultaneously monitor six small voltages in millivolt-range, and it can be used for Holter-electrocardiogram (ECG) and other biopotential monitoring, or in industrial applications. The sensors are based on a surface acoustic wave (SAW) delay line with voltage-dependent, impedance loading on a reflector interdigital transducer (IDT). The load circuit impedance is varied by the capacitance of the voltage-controlled varactor. High resolution is achieved by developing a MOS-capacitor with a thin oxide, low flat-band voltage, and zero-voltage capacitance in the space-charge region, as well as a high-Q-microcoil by thick metal electroplating. Simultaneous monitoring of multiple potentials is realized by time-division-multiplexing of different sensor signals.

The passive cable properties of hair cell stereocilia and their contribution to somatic capacitance measurements.

PubMed

Breneman, Kathryn D; Highstein, Stephen M; Boyle, Richard D; Rabbitt, Richard D

2009-01-01

Somatic measurements of whole-cell capacitance are routinely used to understand physiologic events occurring in remote portions of cells. These studies often assume the intracellular space is voltage-clamped. We questioned this assumption in auditory and vestibular hair cells with respect to their stereocilia based on earlier studies showing that neurons, with radial dimensions similar to stereocilia, are not always isopotential under voltage-clamp. To explore this, we modeled the stereocilia as passive cables with transduction channels located at their tips. We found that the input capacitance measured at the soma changes when the transduction channels at the tips of the stereocilia are open compared to when the channels are closed. The maximum capacitance is felt with the transducer closed but will decrease as the transducer opens due to a length-dependent voltage drop along the stereocilium length. This potential drop is proportional to the intracellular resistance and stereocilium tip conductance and can produce a maximum capacitance error on the order of fF for single stereocilia and pF for the bundle.

Frequency dispersion of capacitance-voltage characteristics in wide bandgap semiconductor-electrolyte junctions

NASA Astrophysics Data System (ADS)

Frolov, D. S.; Zubkov, V. I.

2016-12-01

The frequency dispersion of capacitance-voltage characteristics and derived charge carrier concentration with application to the junction between an electrolyte and wide band-gap semiconductors are investigated. To expand the measurement frequency range, the precision LCR-meter Agilent E4980A was connected to the electrochemical cell ECVPro Nanometrics via a specially designed switch unit. The influence of series resistance and degree of dopant ionization on the frequency dispersion of CV-measured characteristics are discussed. It was shown that in wide band-gap semiconductors one can get both total and ionized dopant concentration, depending on the test frequency choice for capacitance measurements.

Effect of inductive and capacitive coupling on the current–voltage characteristic and electromagnetic radiation from a system of Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rahmonov, I. R., E-mail: rahmonov@theor.jinr.ru, E-mail: ilhom-tj@inbox.ru; Shukrinov, Yu. M.; Atanasova, P. Kh.

We have studied the current–voltage characteristic of a system of long Josephson junctions taking into account the inductive and capacitive coupling. The dependence of the average time derivative of the phase difference on the bias current and spatiotemporal dependences of the phase difference and magnetic field in each junction are considered. The possibility of branching of the current–voltage characteristic in the region of zero field step, which is associated with different numbers of fluxons in individual Josephson junctions, is demonstrated. The current–voltage characteristic of the system of Josephson junctions is compared with the case of a single junction, and itmore » is shown that the observed branching is due to coupling between the junctions. The intensity of electromagnetic radiation associated with motion of fluxons is calculated, and the effect of coupling between junctions on the radiation power is analyzed.« less

Dual-mode self-validating resistance/Johnson noise thermometer system

DOEpatents

Shepard, Robert L.; Blalock, Theron V.; Roberts, Michael J.

1993-01-01

A dual-mode Johnson noise and DC resistance thermometer capable of use in control systems where prompt indications of temperature changes and long term accuracy are needed. A resistance-inductance-capacitance (RLC) tuned circuit produces a continuous voltage signal for Johnson noise temperature measurement. The RLC circuit provides a mean-squared noise voltage that depends only on the capacitance used and the temperature of the sensor. The sensor has four leads for simultaneous coupling to a noise signal processor and to a DC resistance signal processor.

Microscopic Theory of Supercapacitors

NASA Astrophysics Data System (ADS)

Skinner, Brian Joseph

As new energy technologies are designed and implemented, there is a rising demand for improved energy storage devices. At present the most promising class of these devices is the electric double-layer capacitor (EDLC), also known as the supercapacitor. A number of recently created supercapacitors have been shown to produce remarkably large capacitance, but the microscopic mechanisms that underlie their operation remain largely mysterious. In this thesis we present an analytical, microscopic-level theory of supercapacitors, and we explain how such large capacitance can result. Specifically, we focus on four types of devices that have been shown to produce large capacitance. The first is a capacitor composed of a clean, low-temperature two-dimensional electron gas adjacent to a metal gate electrode. Recent experiments have shown that such a device can produce capacitance as much as 40% larger than that of a conventional plane capacitor. We show that this enhanced capacitance can be understood as the result of positional correlations between electrons and screening by the gate electrode in the form of image charges. Thus, the enhancement of the capacitance can be understood primarily as a classical, electrostatic phenomenon. Accounting for the quantum mechanical properties of the electron gas provides corrections to the classical theory, and these are discussed. We also present a detailed numerical calculation of the capacitance of the system based on a calculation of the system's ground state energy using the variational principle. The variational technique that we develop is broadly applicable, and we use it here to make an accurate comparison to experiment and to discuss quantitatively the behavior of the electrons' correlation function. The second device discussed in this thesis is a simple EDLC composed of an ionic liquid between two metal electrodes. We adopt a simple description of the ionic liquid and show that for realistic parameter values the capacitance can be as much as three times larger than that of a plane capacitor with thickness equal to the ion diameter. As in the previous system, this large capacitance is the result of image charge formation in the metal electrode and positional correlations between discrete ions that comprise the electric double-layer. We show that the maximum capacitance scales with the temperature to the power -1/3, and that at moderately large voltage the capacitance also decays as the inverse one third power of voltage. These results are confirmed by a Monte Carlo simulation. The third type of device we consider is that of a porous supercapacitor, where the electrode is made from a conducting material with a dense arrangement of narrow, planar pores into which ionic liquid can enter when a voltage is applied. In this case we show that when the electrode is metallic the narrow pores aggressively screen the interaction between neighboring ions in a pore, leading to an interaction energy between ions that decays exponentially. This exponential interaction between ions allows the capacitance to be nearly an order of magnitude larger than what is predicted by mean-field theories. This result is confirmed by a Monte Carlo simulation. We also present a theory for the capacitance when the electrode is not a perfect metal, but has a finite electronic screening radius. When this screening radius is larger than the distance between pores, ions begin to interact across multiple pores and the capacitance is determined by the Yukawa-like interaction of a three-dimensional, correlated arrangement of ions. Finally, we consider the case of supercapacitor electrodes made from a stack of graphene sheets with randomly-inserted "spacer" molecules. For such devices, experiments have produced very large capacitance despite the small density of states of the electrode material, which would seem to imply poor screening of the ionic charge. We show that these large capacitance values can be understood as the result of collective entrance of ions into the graphene stack (GS) and the renormalization of the ionic charge produced by nonlinear screening. The collective behavior of ions results from the strong elastic energy associated with intercalated ions deforming the GS, which creates an effective attraction between them. The result is the formation of "disks" of charge that enter the electrode collectively and have their charge renormalized by the strong, nonlinear screening of the surrounding graphene layers. This renormalization leads to a capacitance that at small voltages increases linearly with voltage and is enhanced over mean-field predictions by a large factor proportional to the number of ions within the disk to the power 9/4. At large voltages, the capacitance is dictated by the physics of graphite intercalation compounds and is proportional to the voltage raised to the power -4/5. We also examine theoretically the case where the effective fine structure constant of the GS is a small parameter, and we uncover a wealth of scaling regimes.

A MEMS Interface IC With Low-Power and Wide-Range Frequency-to-Voltage Converter for Biomedical Applications.

PubMed

Arefin, Md Shamsul; Redouté, Jean-Michel; Yuce, Mehmet Rasit

2016-04-01

This paper presents an interface circuit for capacitive and inductive MEMS biosensors using an oscillator and a charge pump based frequency-to-voltage converter. Frequency modulation using a differential crossed coupled oscillator is adopted to sense capacitive and inductive changes. The frequency-to-voltage converter is designed with a negative feedback system and external controlling parameters to adjust the sensitivity, dynamic range, and nominal point for the measurement. The sensitivity of the frequency-to-voltage converter is from 13.28 to 35.96 mV/MHz depending on external voltage and charging current. The sensitivity ranges of the capacitive and inductive interface circuit are 17.08 to 54.4 mV/pF and 32.11 to 82.88 mV/mH, respectively. A capacitive MEMS based pH sensor is also connected with the interface circuit to measure the high acidic gastric acid throughout the digestive tract. The sensitivity for pH from 1 to 3 is 191.4 mV/pH with 550 μV(pp) noise. The readout circuit is designed and fabricated using the UMC 0.18 μm CMOS technology. It occupies an area of 0.18 mm (2) and consumes 11.8 mW.

Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Tsao, Yu-Ching; Chang, Ting-Chang; Chen, Hua-Mao; Chen, Bo-Wei; Chiang, Hsiao-Cheng; Chen, Guan-Fu; Chien, Yu-Chieh; Tai, Ya-Hsiang; Hung, Yu-Ju; Huang, Shin-Ping; Yang, Chung-Yi; Chou, Wu-Ching

2017-01-01

This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software.

Experimental observation of the generation of cutoff solitons in a discrete L C nonlinear electrical line

NASA Astrophysics Data System (ADS)

Koon, K. Tse Ve; Marquié, P.; Dinda, P. Tchofo

2014-11-01

We address the problem of supratransmission of waves in a discrete nonlinear system, driven at one end by a periodic excitation at a frequency lying above the phonon band edge. In an experimental electrical transmission line made of 200 inductance-capacitance LC cells, we establish the existence of a voltage threshold for a supratransmission enabling the generation and propagation of cut-off solitons within the line. The decisive role of modulational instability in the onset and development of the process of generation of cut-off solitons is clearly highlighted. The phenomenon of dissipation is identified as being particularly harmful for the soliton generation, but we show that its impact can be managed by a proper choice of the amplitude of the voltage excitation of the system.

Discrete breathers in an electric lattice with an impurity: Birth, interaction, and death

NASA Astrophysics Data System (ADS)

Gómez-Rojas, A.; Halevi, P.

2018-02-01

We have simulated aspects of intrinsic localized modes or discrete breathers in a modulated lumped transmission line with nonlinear varactors and a defect unit cell. As the inductance or capacitance of this cell is increased, a transition from instability to stability takes place. Namely, there exist threshold values of the inductance or capacitance of a lattice impurity for a breather to be able to attach to. A resistive defect can also anchor a breather. Moreover, by either gradually lowering all the source resistances, or else increasing the modulation frequency, multiple secondary ILMs can be spontaneously generated at host sites (with only a single inductive or capacitive defect). Further, if two impurities are subcritically spaced (the separation increasing with the amplitude of the modulation voltage), a breather can pop up midway, with no breathers at the impurity sites themselves. Finally, an ILM can pull closer its neighbors on both sides, only to perish once these ILMs have gotten sufficiently close. To our knowledge, these effects have not been reported for any discrete nonlinear system.

Asymmetric disappearance and periodic asymmetric phenomena of rocking dynamics in micro dual-capacitive energy harvester

NASA Astrophysics Data System (ADS)

Zhu, Jianxiong; Guo, Xiaoyu; Huang, Run

2018-06-01

We study asymmetric disappearance and period asymmetric phenomena starting with a rocking dynamic in micro dual-capacitive energy harvester. The mathematical model includes nonlinear electrostatic forces from the variable dual capacitor, the numerical functioned forces provided by suspending springs, linear damping forces and an external vibration force. The suspending plate and its elastic supports were designed in a symmetric structure in the micro capacitor, however, the reported energy harvester was unavoidable starting with a asymmetric motion in the real vibration environment. We found that the designed dual energy capacitive harvester can harvest ˜6 µW with 10V input voltage, and under 0.8 time's resonant frequency vibration. We also discovered that the rocking dynamics of the suspended plate can be showed with an asymmetric disappearance or periodic asymmetric phenomena starting with an asymmetric motion. The study of these asymmetric disappearance and period asymmetric phenomena were not only important for the design of the stability of the micro capacitor for sensor or the energy harvesting, but also gave a deep understanding of the rocking nonlinear dynamics of the complex micro structures and beams.

Discrete breathers in an electric lattice with an impurity: Birth, interaction, and death.

PubMed

Gómez-Rojas, A; Halevi, P

2018-02-01

We have simulated aspects of intrinsic localized modes or discrete breathers in a modulated lumped transmission line with nonlinear varactors and a defect unit cell. As the inductance or capacitance of this cell is increased, a transition from instability to stability takes place. Namely, there exist threshold values of the inductance or capacitance of a lattice impurity for a breather to be able to attach to. A resistive defect can also anchor a breather. Moreover, by either gradually lowering all the source resistances, or else increasing the modulation frequency, multiple secondary ILMs can be spontaneously generated at host sites (with only a single inductive or capacitive defect). Further, if two impurities are subcritically spaced (the separation increasing with the amplitude of the modulation voltage), a breather can pop up midway, with no breathers at the impurity sites themselves. Finally, an ILM can pull closer its neighbors on both sides, only to perish once these ILMs have gotten sufficiently close. To our knowledge, these effects have not been reported for any discrete nonlinear system.

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

NASA Astrophysics Data System (ADS)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Effects of discrete-electrode arrangement on traveling-wave electroosmotic pumping

NASA Astrophysics Data System (ADS)

Liu, Weiyu; Shao, Jinyou; Ren, Yukun; Wu, Yupan; Wang, Chunhui; Ding, Haitao; Jiang, Hongyuan; Ding, Yucheng

2016-09-01

Traveling-wave electroosmotic (TWEO) pumping arises from the action of an imposed traveling-wave (TW) electric field on its own induced charge in the diffuse double layer, which is formed on top of an electrode array immersed in electrolyte solutions. Such a traveling field can be merely realized in practice by a discrete electrode array upon which the corresponding voltages of correct phase are imposed. By employing the theory of linear and weakly nonlinear double-layer charging dynamics, a physical model incorporating both the nonlinear surface capacitance of diffuse layer and Faradaic current injection is developed herein in order to quantify the changes in TWEO pumping performance from a single-mode TW to discrete electrode configuration. Benefiting from the linear analysis, we investigate the influence of using discrete electrode array to create the TW signal on the resulting fluid motion, and several approaches are suggested to improve the pumping performance. In the nonlinear regime, our full numerical analysis considering the intervening isolation spacing indicates that a practical four-phase discrete electrode configuration of equal electrode and gap width exhibits stronger nonlinearity than expected from the idealized pump applied with a single-mode TW in terms of voltage-dependence of the ideal pumping frequency and peak flow rate, though it has a much lower pumping performance. For model validation, pumping of electrolytes by TWEO is achieved over a confocal spiral four-phase electrode array covered by an insulating microchannel; measurement of flow velocity indicates the modified nonlinear theory considering moderate Faradaic conductance is indeed a more accurate physical description of TWEO. These results offer useful guidelines for designing high-performance TWEO microfluidic pumps with discrete electrode array.

Energy harvesting with stacked dielectric elastomer transducers: Nonlinear theory, optimization, and linearized scaling law

NASA Astrophysics Data System (ADS)

Tutcuoglu, A.; Majidi, C.

2014-12-01

Using principles of damped harmonic oscillation with continuous media, we examine electrostatic energy harvesting with a "soft-matter" array of dielectric elastomer (DE) transducers. The array is composed of infinitely thin and deformable electrodes separated by layers of insulating elastomer. During vibration, it deforms longitudinally, resulting in a change in the capacitance and electrical enthalpy of the charged electrodes. Depending on the phase of electrostatic loading, the DE array can function as either an actuator that amplifies small vibrations or a generator that converts these external excitations into electrical power. Both cases are addressed with a comprehensive theory that accounts for the influence of viscoelasticity, dielectric breakdown, and electromechanical coupling induced by Maxwell stress. In the case of a linearized Kelvin-Voigt model of the dielectric, we obtain a closed-form estimate for the electrical power output and a scaling law for DE generator design. For the complete nonlinear model, we obtain the optimal electrostatic voltage input for maximum electrical power output.

A compact model for selectors based on metal doped electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Lu; Song, Wenhao; Yang, J. Joshua; Li, Hai; Chen, Yiran

2018-04-01

A selector device that demonstrates high nonlinearity and low switching voltages was fabricated using HfOx as a solid electrolyte doped with Ag electrodes. The electronic conductance of the volatile conductive filaments responsible for the switching was studied under both static and dynamic conditions. A compact model is developed from this study that describes the physical processes of the formation and rupture of the Ag filament(s). A dynamic capacitance model is used to fit the transient current traces under different voltage bias, which enables the extraction of parameters associated with the various parasitic components in the device.

Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bora, B., E-mail: bbora@cchen.cl

2015-10-15

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found tomore » work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage.« less

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

PubMed

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-08-10

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

PubMed Central

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-01-01

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively. PMID:28773801

Analysis of capacitive force acting on a cantilever tip at solid/liquid interfaces

NASA Astrophysics Data System (ADS)

Umeda, Ken-ichi; Kobayashi, Kei; Oyabu, Noriaki; Hirata, Yoshiki; Matsushige, Kazumi; Yamada, Hirofumi

2013-04-01

Dielectric properties of biomolecules or biomembranes are directly related to their structures and biological activities. Capacitance force microscopy based on the cantilever deflection detection is a useful scanning probe technique that can map local dielectric constant. Here we report measurements and analysis of the capacitive force acting on a cantilever tip at solid/liquid interfaces induced by application of an alternating voltage to explore the feasibility of the measurements of local dielectric constant by the voltage modulation technique in aqueous solutions. The results presented here suggest that the local dielectric constant measurements by the conventional voltage modulation technique are basically possible even in polar liquid media. However, the cantilever deflection is not only induced by the electrostatic force, but also by the surface stress, which does not include the local dielectric information. Moreover, since the voltage applied between the tip and sample are divided by the electric double layer and the bulk polar liquid, the capacitive force acting on the apex of the tip are strongly attenuated. For these reasons, the lateral resolution in the local dielectric constant measurements is expected to be deteriorated in polar liquid media depending on the magnitude of dielectric response. Finally, we present the criteria for local dielectric constant measurements with a high lateral resolution in polar liquid media.

Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Ankonina, G.; Kauffmann, Y.; Atiya, G.; Kaplan, W. D.; Padmanabhan, R.; Eisenstein, G.

2017-06-01

This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

Measured radial dependence of the peak sheath voltages present in very high frequency capacitive discharges

DOE PAGES

Barnat, E. V.; Miller, P. A.; Hebner, G. A.; ...

2007-05-16

In this paper, the radial distribution of the measured voltage drop across a sheath formed between a 300mm electrode and an argon plasma discharge is shown to depend on the excitation radio frequency, under constant power and pressure conditions. At a lower frequency of 13.56MHz, the voltage drop across the sheath is uniform across the 300mm electrode, while at higher frequencies of 60 and 162MHz the voltage drop becomes radially nonuniform. Finally, the magnitude and spatial extent of the nonuniformity become greater with increasing frequency.

Strongly nonlinear dynamics of electrolytes in large ac voltages.

PubMed

Højgaard Olesen, Laurits; Bazant, Martin Z; Bruus, Henrik

2010-07-01

We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two features--significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of "ac capacitive desalination" since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and collapse of space-charge layers, even in the absence of any net Faradaic current through the cell. We also predict that steric effects of finite ion sizes (going beyond dilute-solution theory) act to suppress the strongly nonlinear regime in the limit of concentrated electrolytes, ionic liquids, and molten salts. Beyond the model problem, our reduced equations for thin double layers, based on uniformly valid matched asymptotic expansions, provide a useful mathematical framework to describe additional nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena.

Dynamic, nonlinear feedback regulation of slow pacemaking by A-type potassium current in ventral tegmental area neurons.

PubMed

Khaliq, Zayd M; Bean, Bruce P

2008-10-22

We analyzed ionic currents that regulate pacemaking in dopaminergic neurons of the mouse ventral tegmental area by comparing voltage trajectories during spontaneous firing with ramp-evoked currents in voltage clamp. Most recordings were made in brain slice, with key experiments repeated using acutely dissociated neurons, which gave identical results. During spontaneous firing, net ionic current flowing between spikes was calculated from the time derivative of voltage multiplied by cell capacitance, signal-averaged over many firing cycles to enhance resolution. Net inward interspike current had a distinctive nonmonotonic shape, reaching a minimum (generally <1 pA) between -60 and -55 mV. Under voltage clamp, ramps over subthreshold voltages elicited a time- and voltage-dependent outward current that peaked near -55 mV. This current was undetectable with 5 mV/s ramps and increased steeply with depolarization rate over the range (10-50 mV/s) typical of natural pacemaking. Ramp-evoked subthreshold current was resistant to alpha-dendrotoxin, paxilline, apamin, and tetraethylammonium but sensitive to 4-aminopyridine and 0.5 mM Ba2+, consistent with A-type potassium current (I(A)). Same-cell comparison of currents elicited by various ramp speeds with natural spontaneous depolarization showed how the steep dependence of I(A) on depolarization rate results in small net inward currents during pacemaking. These results reveal a mechanism in which subthreshold I(A) is near zero at steady state, but is engaged at depolarization rates >10 mV/s to act as a powerful, supralinear feedback element. This feedback mechanism explains how net ionic current can be constrained to <1-2 pA but reliably inward, thus enabling slow, regular firing.

Analog bus driver and multiplexer

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Hancock, Bruce (Inventor); Cunningham, Thomas J. (Inventor)

2012-01-01

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Temperature aspect of degradation of electrochemical double-layer capacitors (EDLC)

NASA Astrophysics Data System (ADS)

Baek, Dong-Cheon; Kim, Hyun-Ho; Lee, Soon-Bok

2015-03-01

Electric double layer capacitors (EDLC) cells have a process variation and temperature dependency in capacitance so that balancing is required when they are connected in series, which includes electronic voltage management based on capacitance monitoring. This paper measured temperature aspect of capacitance periodically to monitor health and degradation behavior of EDLC stressed under high temperatures and zero below temperatures respectively, which enables estimation of the state of health (SOH) regardless of temperature. At high temperature, capacitance saturation and delayed expression of degradation was observed. After cyclic stress at zero below temperature, less effective degradation and time recovery phenomenon were occurred.

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

PubMed Central

Yan, Z. B.; Liu, J. -M.

2013-01-01

The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device. PMID:23963467

Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions

NASA Astrophysics Data System (ADS)

Park, K. W.; Nair, H. P.; Crook, A. M.; Bank, S. R.; Yu, E. T.

2011-09-01

Scanning capacitance microscopy is used to characterize the electronic properties of ErAs nanoparticles embedded in GaAs pn junctions grown by molecular beam epitaxy. Voltage-dependent capacitance images reveal localized variations in subsurface electronic structure near buried ErAs nanoparticles at lateral length scales of 20-30 nm. Numerical modeling indicates that these variations arise from inhomogeneities in charge modulation due to Fermi level pinning behavior associated with the embedded ErAs nanoparticles. Statistical analysis of image data yields an average particle radius of 6-8 nm—well below the direct resolution limit in scanning capacitance microscopy but discernible via analysis of patterns in nanoscale capacitance images.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

ATP activates P2x receptors and requires extracellular Ca(++) participation to modify outer hair cell nonlinear capacitance.

PubMed

Yu, Ning; Zhao, Hong-Bo

2008-11-01

Intracochlear ATP is an important mediator in regulating hearing function. ATP can activate ionotropic purinergic (P2x) and metabotropic purinergic (P2y) receptors to influence cell functions. In this paper, we report that ATP can activate P2x receptors directly to modify outer hair cell (OHC) electromotility, which is an active cochlear amplifier determining hearing sensitivity and frequency selectivity in mammals. We found that ATP, but not UTP, a P2y receptor agonist, reduced the OHC electromotility-associated nonlinear capacitance (NLC) and shifted its voltage dependence to the right (depolarizing) direction. Blockage of the activation of P2x receptors by pyridoxalphosphate-6-azophenyl-2',4'-disulfonic acid (PPADS), suramin, and 4,4'-diisothiocyanato-stilbene-2,2'-disulfonic acid (DIDS) could block the ATP effect. This modification also required extracellular Ca(++) participation. Removal of extracellular Ca(++) abolished the ATP effect. However, chelation of intracellular Ca(++) concentration by a fast calcium-chelating reagent 1,2-bis(o-aminophenoxy)ethane-N,N,N',N'-tetraacetic acid (BAPTA, 10 mM) did not affect the effect of ATP on NLC. The effect is also independent of K(+) ions. Substitution of Cs(+) for intracellular or extracellular K(+) did not affect the ATP effect. Our findings indicate that ATP activates P2x receptors instead of P2y receptors to modify OHC electromotility. Extracellular Ca(++) is required for this modification.

Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

NASA Astrophysics Data System (ADS)

Kim, Tae-Soo; Lim, Seung-Young; Park, Yong-Keun; Jung, Gunwoo; Song, Jung-Hoon; Cha, Ho-Young; Han, Sang-Woo

2018-06-01

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent ( F- D) capacitance-voltage ( C- V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage ( V th ). A drastic voltage shift in the C- V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V th with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Low power, highly linear output buffer. [for infrared focal plane arrays

NASA Technical Reports Server (NTRS)

Foley, D.; Butler, N.; Stobie, J.

1992-01-01

A class AB CMOS output buffer has been designed for use on an IR focal plane array. Given the requirements for power dissipation and load capacitance a class A output, such as a source follower, would be unsuitable. The approach taken uses a class AB amplifier configured as a charge integrator. Thus it converts a charge packet in the focal plane multiplexer to a voltage which is then the output of the focal plane. With a quiescent current of 18 micro-a and a load capacitance of 100 pf, the amplifier has an open loop unity gain bandwidth of 900 khz. Integral nonlinearity is better than .03 percent over 5.5 volts when run with VDD-VSS = 6v.

Two-Dimensional Porous Electrode Model for Capacitive Deionization

DOE PAGES

Hemmatifar, Ali; Stadermann, Michael; Santiago, Juan G.

2015-10-28

Here, ion transport in porous conductive materials is of great importance in a variety of electrochemical systems including batteries and supercapacitors. We here analyze the coupling of flow and charge transport and charge capacitance in capacitive deionization (CDI). In CDI, a pair of porous carbon electrodes is employed to electrostatically retain and remove ionic species from aqueous solutions. We here develop and solve a novel unsteady two-dimensional model for capturing the ion adsorption/desorption dynamics in a flow-between CDI system. We use this model to study the complex, nonlinear coupling between electromigration, diffusion, and advection of ions. We also fabricated amore » laboratory-scale CDI cell which we use to measure the near-equilibrium, cumulative adsorbed salt, and electric charge as a function of applied external voltage. We use these integral measures to validate and calibrate this model. We further present a detailed computational study of the spatiotemporal adsorption/desorption dynamics under constant voltage and constant flow conditions. We show results for low (20 mM KCl) and relatively high (200 mM KCl) inlet ion concentrations and identify effects of ion starvation on desalination. We show that in both cases electromigrative transport eventually becomes negligible and diffusive ion transport reduces the desalination rate.« less

Enhancing Graphene Capacitance by Nitrogen: Effects of Doping Configuration and Concentration

DOE PAGES

Zhan, Cheng; Cummings, Peter; Jiang, De-en

2016-01-08

Recent experiments have shown that nitrogen doping enhances capacitance in carbon electrode supercapacitors. However, a detailed study of the effect of N-doping on capacitance is still lacking. In this paper, we study the doping concentration and the configuration effect on the electric double-layer (EDL) capacitance, quantum capacitance, and total capacitance. It is found that pyridinic and graphitic nitrogens can increase the total capacitance by increasing quantum capacitance, but pyrrolic configuration limits the total capacitance due to its much lower quantum capacitance than the other two configurations. We also find that, unlike the graphitic and pyridinic nitrogens, the pyrrolic configuration's quantummore » capacitance does not depend on the nitrogen concentration, which may explain why some capacitance versus voltage measurements of N-doped graphene exhibit a V-shaped curve similar to that of undoped graphene. Our investigation provides a deeper understanding of the capacitance enhancement of the N-doping effect in carbon electrodes and suggests a potentially effective way to optimize the capacitance by controlling the type of N-doping.« less

Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

NASA Astrophysics Data System (ADS)

Meier, F.

2012-05-01

Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3–δ thin films investigated by chemical capacitance measurements

PubMed Central

Rupp, Ghislain M.; Fleig, Jürgen

2018-01-01

La0.6Sr0.4FeO3–δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to –600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions. PMID:29671421

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3-δ thin films investigated by chemical capacitance measurements.

PubMed

Schmid, Alexander; Rupp, Ghislain M; Fleig, Jürgen

2018-05-03

La0.6Sr0.4FeO3-δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to -600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions.

Line transients with corona

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saied, M.M.; Safar, Y.A.; Salama, M.H.

1987-01-01

This paper investigates the effect of corona on the electromagnetic transients along high voltage overhead lines. A method is presented to simulate the line by dividing it into a number of sections connected in cascade. For {ital n} line sections, the number of the unknown variables is 2{ital n} + 1. The method allows any waveform of the exciting voltage function, as well as any impedance loading condition. The corona is represented by voltage-dependent shunt current sources. A systematic way for writing a sufficient number of differential equations is shown. For their solution, a digital computer subroutine based on themore » Runge--Kutta--Verner method was used. An artificial frequency-dependent damping by means of linear resistors was used to suppress the Gibb's oscillations in the solution. The proposed method is applied to study the transients on a 40 km high voltage line with 30-ft flat phase spacing and a single 1.4 inch ACSR conductor per phase. The exciting voltage has a double-exponential impulse waveform. Solutions are given for three values of resistive loads Z{sub {ital c}}2Z{sub {ital c}} and Z{sub {ital c}}/2, where Z{sub {ital c}} is the line surge impedance. The results of two interesting cases of inductive and capacitive loads are also given. Physical interpretations for the different solutions are given. Also, the current-voltage duality between inductive and capacitive loads is recognized. The corona was found to attenuate and distort the travelling waves. For example, during one wave excursion, the reduction of the current wave peaks can reach values as high as 8.5%. The effect is more noticeable in the current than in the voltage waves. As expected, it increases also with the line corona losses. The effect of the increase of the line effective capacitance due to the corona discharge is also demonstrated.« less

Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

PubMed

Santos-Sacchi, Joseph; Song, Lei

2016-06-07

In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate interrogation timescales, and that revelation of such activity could highlight an evolutionary means for kinetic modifications within the family to address hearing requirements in mammals. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chinthavali, Madhu Sudhan; Campbell, Steven L

This paper presents an analytical model for wireless power transfer system used in electric vehicle application. The equivalent circuit model for each major component of the system is described, including the input voltage source, resonant network, transformer, nonlinear diode rectifier load, etc. Based on the circuit model, the primary side compensation capacitance, equivalent input impedance, active / reactive power are calculated, which provides a guideline for parameter selection. Moreover, the voltage gain curve from dc output to dc input is derived as well. A hardware prototype with series-parallel resonant stage is built to verify the developed model. The experimental resultsmore » from the hardware are compared with the model predicted results to show the validity of the model.« less

Observation of non-linear biomass-capacitance correlations: reasons and implications for bioprocess control.

PubMed

Maskow, Thomas; Röllich, Anita; Fetzer, Ingo; Yao, Jun; Harms, Hauke

2008-09-15

Electrical capacitance has been discussed as a real time measure for living biomass concentration in technical bioreactors such as brewery (fermentation) tanks. Commonly, a linear correlation between biomass concentration and capacitance is assumed. While following the growth and subsequent lipid formation of the yeast Arxula adeninivorans we observed non-linearity between biomass concentration and capacitance. Capacitance deviation from linearity coincided with incipient lipid formation and depended on the intracellular lipid content. As the extent of deviation between capacitance and biomass concentration was proportional to the lipid concentration, it was considered as a quantitative measure of intracellular product formation. The correlation between shifts in dielectric relaxation (summarized as characteristic frequency of the Cole-Cole equation) and lipid content could not be explained by interfacial polarization on the lipid droplets alone. However, the parameters of the Cole-Cole equation were found to be a clear indicator for different phases of growth and lipid production. Integrating all results in a redundancy analysis (RDA), we were able to accurately describe the formation of cellular lipid inclusions. Our measurements are thus potentially valuable as components of future bioprocess control strategies targeting intracellular products such as proteins or biopolyesters.

Tracking ion irradiation effects using buried interface devices

NASA Astrophysics Data System (ADS)

Cutshall, D. B.; Kulkarni, D. D.; Miller, A. J.; Harriss, J. E.; Harrell, W. R.; Sosolik, C. E.

2018-05-01

We discuss how a buried interface device, specifically a metal-oxide-semiconductor (MOS) capacitor, can be utilized to track effects of ion irradiation on insulators. We show that the exposure of oxides within unfinished capacitor devices to ions can lead to significant changes in the capacitance of the finished devices. For multicharged ions, these capacitive effects can be traced to defect production within the oxide and ultimately point to a role for charge-dependent energy loss. In particular, we attribute the stretchout of the capacitance-voltage curves of MOS devices that include an irradiated oxide to the ion irradiation. The stretchout shows a power law dependence on the multicharged ion charge state (Q) that is similar to that observed for multicharged ion energy loss in other systems.

Experimental investigation of mode transitions in asymmetric capacitively coupled radio-frequency Ne and CF4 plasmas

NASA Astrophysics Data System (ADS)

Liu, Gang-Hu; Liu, Yong-Xin; Bai, Li-Shui; Zhao, Kai; Wang, You-Nian

2018-02-01

The dependence of the electron density and the emission intensity on external parameters during the transitions of the electron power absorption mode is experimentally studied in asymmetric electropositive (neon) and electronegative (CF4) capacitively coupled radio-frequency plasmas. The spatio-temporal distribution of the emission intensity is measured with phase resolved optical emission spectroscopy and the electron density at the discharge center is measured by utilizing a floating hairpin probe. In neon discharge, the emission intensity increases almost linearly with the rf voltage at all driving frequencies covered here, while the variation of the electron density with the rf voltage behaves differently at different driving frequencies. In particular, the electron density increases linearly with the rf voltage at high driving frequencies, while at low driving frequencies the electron density increases slowly at the low-voltage side and, however, grows rapidly, when the rf voltage is higher than a certain value, indicating a transition from α to γ mode. The rf voltage, at which the mode transition occurs, increases with the decrease of the driving frequency/the working pressure. By contrast, in CF4 discharge, three different electron power absorption modes can be observed and the electron density and emission intensity do not exhibit a simple dependence on the rf voltage. In particular, the electron density exhibits a minimum at a certain rf voltage when the electron power absorption mode is switching from drift-ambipolar to the α/γ mode. A minimum can also be found in the emission intensity at a higher rf voltage when a discharge is switching into the γ mode.

Molecular Insights into Carbon Nanotube Supercapacitors: Capacitance Independent of Voltage and Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Guang; Li, Song; Atchison, Jennifer S.

2013-04-12

Molecular dynamics (MD) simulations of supercapacitors with single-walled carbon nanotube (SWCNT) electrodes in room-temperature ionic liquids were performed to investigate the influences of the applied electrical potential, the radius/curvature of SWCNTs, and temperature on their capacitive behavior. It is found that (1) SWCNTs-based supercapacitors exhibit a near-flat capacitance–potential curve, (2) the capacitance increases as the tube radius decreases, and (3) the capacitance depends little on the temperature. We report the first MD study showing the influence of the electrode curvature on the capacitance–potential curve and negligible dependence of temperature on capacitance of tubular electrode. The latter is in good agreementmore » with recent experimental findings and is attributed to the similarity of the electrical double layer (EDL) microstructure with temperature varying from 260 to 400 K. The electrode curvature effect is explained by the dominance of charge overscreening and increased ion density per unit area of electrode surface.« less

Temporal differentiation of pH-dependent capacitive current from dopamine.

PubMed

Yoshimi, Kenji; Weitemier, Adam

2014-09-02

Voltammetric recording of dopamine (DA) with fast-scan cyclic voltammetry (FSCV) on carbon fiber microelectrodes have been widely used, because of its high sensitivity to dopamine. However, since an electric double layer on a carbon fiber surface in a physiological ionic solution behaves as a capacitor, fast voltage manipulation in FSCV induces large capacitive current. The faradic current from oxidation/reduction of target chemicals must be extracted from this large background current. It is known that ionic shifts, including H(+), influence this capacitance, and pH shift can cause confounding influences on the FSCV recordings within a wide range of voltage. Besides FSCV with a triangular waveform, we have been using rectangular pulse voltammetry (RPV) for dopamine detection in the brain. In this method, the onset of a single pulse causes a large capacitive current, but unlike FSCV, the capacitive current is restricted to a narrow temporal window of just after pulse onset (<5 ms). In contrast, the peak of faradic current from dopamine oxidation occurs after a delay of more than a few milliseconds. Taking advantage of the temporal difference, we show that RPV could distinguish dopamine from pH shifts clearly and easily. In addition, the early onset current was useful to evaluate pH shifts. The narrow voltage window of our RPV pulse allowed a clear differentiation of dopamine and serotonin (5-HT), as we have shown previously. Additional recording with RPV, alongside FSCV, would improve identification of chemicals such as dopamine, pH, and 5-HT.

Solar Array Hysteresis and its Interaction with the MPPT System

NASA Astrophysics Data System (ADS)

Fernandez, A.; Baur, C.; Gomez-Carpintero, F.

2014-08-01

It is well known that solar cells have a capacitance in parallel which value changes with the voltage. Depending on the section arrangement on the Solar Array, the power conversion unit connected to it will see a smaller or larger capacitance value and will have to cope with its adverse effects. In the case of converters with an MPPT, this capacitance gives place to an hysteresis effect that might shift the tracking point, reducing the power extracted from the Solar Array. This paper explores the different sides of this issue, from capacitance modelling to the effects on the MPPT. Additionally, this paper analyses a similar interaction between MPPTs and commercial SAS.

Electrochemical performance of microporous and mesoporous activated carbons in neat and diluted 1-ethyl-3-methylimidazolium tetrafluoroborate

NASA Astrophysics Data System (ADS)

Kumagai, Seiji; Hatomi, Masaki; Tashima, Daisuke

2017-03-01

1-Ethyl-3-methylimidazolium tetrafluoroborate (EMIm·BF4), neat and diluted with propylene carbonate to 1 mol L-1, have been employed as electrolytes of electrical double-layer capacitors (EDLCs). The effects of microporosity and mesoporosity in activated carbon (AC) electrodes on the capacitive and resistive performances upon the use of neat and diluted EMIm·BF4 have been explored. In addition to cyclic voltammetry and galvanostatic charge-discharge tests, electrochemical impedance spectroscopy has been performed employing Kang's equivalent circuit model consisting of three resistances, three constant phase elements, and one bounded Warburg impedance. The overall impedance of the EDLC cell was separated into components of intrinsic resistance, bulk electrolyte, diffusion layer, and Helmholtz layer. The specific capacitance and the equivalent series resistance (ESR) of mesoporous AC were found to be highly dependent on the rate of ionic transfer. Lower cell voltage was identified as being responsible for lower specific capacitance and larger ESR of mesoporous AC, which was similarly seen in the neat and diluted EMIm·BF4, and could be alleviated by increasing the cell voltage. The inferior rate performance and the cell-voltage-dependent performance of mesoporous AC, which were more distinctly observed in the neat EMIm·BF4, could be attributed to the lower mobility of EMIm+ and BF4- in mesopores.

Polarization and Fowler-Nordheim tunneling in anodized Al-Al2O3-Au diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2000-06-01

Polarization in anodic Al2O3 films is measured by using quasi-dc current-voltage (I-V) curves of Al-Al2O3-Au diodes. A reproducible polarization state is established by applying a negative voltage to the Au electrode of a rectifying Al-Al2O3-Au diode. The difference between subsequent I-V curves with Au positive is a measure of polarization in the sample. The magnitude of polarization charge in Al2O3 depends on the anodizing electrolyte. Al2O3 films formed in H2O-based electrolytes have approximately ten times the polarization charge of Al2O3 films formed in ethylene glycol-based electrolyte. Anodizing conditions that produce greater polarizing charge in anodic Al2O3 result in voltage-time curves during anodization under galvanostatic conditions that are nonlinear. Anodic films with greater polarizing charge also have a greater apparent interface capacitance which is independent of Al2O3 thickness. I-V curves of Al-Al2O3-Au diodes for increasing voltage are dominated by polarization. I-V curves for decreasing voltage are reproducible and parallel but depend on the maximum current and voltage reached during the measurement. There is no single current corresponding to a given voltage. I-V curves for decreasing voltage are analyzed assuming that the conduction mechanism is Fowler-Nordheim (FN) tunneling. There is a qualitative difference between the FN tunneling parameters for Al2O3 films formed in H2O-based electrolytes and those formed in ethylene glycol-based electrolyte. For the former the value of the exponential term in the FN analysis increases as the value of maximum voltage and current in an I-V characteristic increases, while the value of the pre-exponential term is nearly constant. For the latter, the exponential term is nearly constant as maximum voltage and current increase, but the pre-exponential term decreases by about 5 decades. Thus polarization charge incorporated during formation of anodized Al2O3 strongly affects the formation of the insulating film, the stability of the films under bias, and their conduction characteristics.

Capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode

NASA Astrophysics Data System (ADS)

Gawri, Isha; Sharma, Mamta; Jindal, Silky; Singh, Harpreet; Tripathi, S. K.

2018-05-01

The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters.

Permittivity changes induced by injected electrons and field-induced phase transition in KTa1-xNbxO3 optical beam deflectors

NASA Astrophysics Data System (ADS)

Imai, Tadayuki; Toyoda, Seiji; Miyazu, Jun; Kobayashi, Junya; Kojima, Seiji

2014-09-01

A space-charge-controlled optical beam deflector made of a KTa1-xNbxO3 (KTN) single crystal utilizes electrons that are injected through the cathode by applying voltage. With the deflector made of lithium-doped KTN (K0.95Li0.05Ta0.73Nb0.27O3, KLTN/0.05/0.27), we observed large increases in the capacitance of the deflector when we injected electrons. The increases were not caused by changes in the electrode interface but by changes in the permittivity of the bulk crystal. In the paraelectric phase, the KLTN/0.05/0.27 crystal exhibited nonlinearity in the dielectric response with double hysteresis loops in the D-E curves. We ascribed the permittivity change to this nonlinear phenomenon. We also discuss this nonlinearity in terms of the Landau-Devonshire phenomenological theory. The coefficient g4 of the fourth power term in the expanded free energy was negative in the paraelectric phase near the phase transition temperature as it is for other materials that exhibit a first-order phase transition. However, g4 depended on the temperature and its sign became positive about 15 °C above the phase transition temperature.

Voltage-dependent K+ channels improve the energy efficiency of signalling in blowfly photoreceptors

PubMed Central

2017-01-01

Voltage-dependent conductances in many spiking neurons are tuned to reduce action potential energy consumption, so improving the energy efficiency of spike coding. However, the contribution of voltage-dependent conductances to the energy efficiency of analogue coding, by graded potentials in dendrites and non-spiking neurons, remains unclear. We investigate the contribution of voltage-dependent conductances to the energy efficiency of analogue coding by modelling blowfly R1-6 photoreceptor membrane. Two voltage-dependent delayed rectifier K+ conductances (DRs) shape the membrane's voltage response and contribute to light adaptation. They make two types of energy saving. By reducing membrane resistance upon depolarization they convert the cheap, low bandwidth membrane needed in dim light to the expensive high bandwidth membrane needed in bright light. This investment of energy in bandwidth according to functional requirements can halve daily energy consumption. Second, DRs produce negative feedback that reduces membrane impedance and increases bandwidth. This negative feedback allows an active membrane with DRs to consume at least 30% less energy than a passive membrane with the same capacitance and bandwidth. Voltage-dependent conductances in other non-spiking neurons, and in dendrites, might be organized to make similar savings. PMID:28381642

Voltage-dependent K+ channels improve the energy efficiency of signalling in blowfly photoreceptors.

PubMed

Heras, Francisco J H; Anderson, John; Laughlin, Simon B; Niven, Jeremy E

2017-04-01

Voltage-dependent conductances in many spiking neurons are tuned to reduce action potential energy consumption, so improving the energy efficiency of spike coding. However, the contribution of voltage-dependent conductances to the energy efficiency of analogue coding, by graded potentials in dendrites and non-spiking neurons, remains unclear. We investigate the contribution of voltage-dependent conductances to the energy efficiency of analogue coding by modelling blowfly R1-6 photoreceptor membrane. Two voltage-dependent delayed rectifier K + conductances (DRs) shape the membrane's voltage response and contribute to light adaptation. They make two types of energy saving. By reducing membrane resistance upon depolarization they convert the cheap, low bandwidth membrane needed in dim light to the expensive high bandwidth membrane needed in bright light. This investment of energy in bandwidth according to functional requirements can halve daily energy consumption. Second, DRs produce negative feedback that reduces membrane impedance and increases bandwidth. This negative feedback allows an active membrane with DRs to consume at least 30% less energy than a passive membrane with the same capacitance and bandwidth. Voltage-dependent conductances in other non-spiking neurons, and in dendrites, might be organized to make similar savings. © 2017 The Author(s).

Optimized pulsed write schemes improve linearity and write speed for low-power organic neuromorphic devices

NASA Astrophysics Data System (ADS)

Keene, Scott T.; Melianas, Armantas; Fuller, Elliot J.; van de Burgt, Yoeri; Talin, A. Alec; Salleo, Alberto

2018-06-01

Neuromorphic devices are becoming increasingly appealing as efficient emulators of neural networks used to model real world problems. However, no hardware to date has demonstrated the necessary high accuracy and energy efficiency gain over CMOS in both (1) training via backpropagation and (2) in read via vector matrix multiplication. Such shortcomings are due to device non-idealities, particularly asymmetric conductance tuning in response to uniform voltage pulse inputs. Here, by formulating a general circuit model for capacitive ion-exchange neuromorphic devices, we show that asymmetric nonlinearity in organic electrochemical neuromorphic devices (ENODes) can be suppressed by an appropriately chosen write scheme. Simulations based upon our model suggest that a nonlinear write-selector could reduce the switching voltage and energy, enabling analog tuning via a continuous set of resistance states (100 states) with extremely low switching energy (~170 fJ · µm‑2). This work clarifies the pathway to neural algorithm accelerators capable of parallelism during both read and write operations.

Capacitively coupled RF voltage probe having optimized flux linkage

DOEpatents

Moore, James A.; Sparks, Dennis O.

1999-02-02

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

Scattering theory of nonlinear thermoelectricity in quantum coherent conductors.

PubMed

Meair, Jonathan; Jacquod, Philippe

2013-02-27

We construct a scattering theory of weakly nonlinear thermoelectric transport through sub-micron scale conductors. The theory incorporates the leading nonlinear contributions in temperature and voltage biases to the charge and heat currents. Because of the finite capacitances of sub-micron scale conducting circuits, fundamental conservation laws such as gauge invariance and current conservation require special care to be preserved. We do this by extending the approach of Christen and Büttiker (1996 Europhys. Lett. 35 523) to coupled charge and heat transport. In this way we write relations connecting nonlinear transport coefficients in a manner similar to Mott's relation between the linear thermopower and the linear conductance. We derive sum rules that nonlinear transport coefficients must satisfy to preserve gauge invariance and current conservation. We illustrate our theory by calculating the efficiency of heat engines and the coefficient of performance of thermoelectric refrigerators based on quantum point contacts and resonant tunneling barriers. We identify, in particular, rectification effects that increase device performance.

Capacitively-coupled inductive sensors for measurements of pulsed currents and pulsed magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, C.A.

In experiments involving pulsed high magnetic fields the appearance of the full induced voltage at the output terminals of large-area inductive sensors such as diamagnetic loops and Rogowski belts imposes severe requirements on the insulation near the output. Capacitive detection of the inductive-sensor output voltage provides an ideal geometry for high-voltage insulation, and also accomplishes the necessary voltage division. An inductive-shunt current monitor was designed to utilize the capacitive-detection principle. The contruction of this device and its performance are described in this paper.

Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

NASA Astrophysics Data System (ADS)

Chattopadhyay, P.

1994-10-01

The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider

PubMed Central

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-01-01

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids. PMID:29149085

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

PubMed

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

Electromagnetic Compatibility of Devices on Hybrid Electromagnetic Components

NASA Astrophysics Data System (ADS)

Konesev, S. G.; Khazieva, R. T.; Kirillov, R. V.; Gainutdinov, I. Z.; Kondratyev, E. Y.

2018-01-01

There is a general tendency to reduce the weight and dimensions, the consumption of conductive and electrical insulating materials, increase the reliability and energy efficiency of electrical devices. In recent years, designers have been actively developing devices based on hybrid electromagnetic components (HEMC) such as inductive-capacitive converters (ICC), voltages pulse generators (VPG), secondary power supplies (SPS), capacitive storage devices (CSD), induction heating systems (IHS). Sources of power supplies of similar electrical devices contain, as a rule, links of increased frequency and function in key (pulse) modes, which leads to an increase in electromagnetic interference (EMI). Nonlinear and periodic (impulse) loads, non-sinusoidal (pulsation) of the electromotive force and nonlinearity of the internal parameters of the source and input circuits of consumers distort the shape of the input voltage lead to an increase in thermal losses from the higher harmonic currents, aging of the insulation, increase in the weight of the power supply filter units, resonance at higher harmonics. The most important task is to analyze the operation of electrotechnical devices based on HEMC from the point of view of creating EMIs and assessing their electromagnetic compatibility (EMC) with power supply systems (PSS). The article presents the results of research on the operation of an IHS, the operation principle of a secondary power supply source of which is based on the operation of a half-bridge autonomous inverter, the switching circuit of which is made in the form of a HEMC, called the «multifunctional integrated electromagnetic component»" (MIEC).

Non-linear Membrane Properties in Entorhinal Cortical Stellate Cells Reduce Modulation of Input-Output Responses by Voltage Fluctuations

PubMed Central

Fernandez, Fernando R.; Malerba, Paola; White, John A.

2015-01-01

The presence of voltage fluctuations arising from synaptic activity is a critical component in models of gain control, neuronal output gating, and spike rate coding. The degree to which individual neuronal input-output functions are modulated by voltage fluctuations, however, is not well established across different cortical areas. Additionally, the extent and mechanisms of input-output modulation through fluctuations have been explored largely in simplified models of spike generation, and with limited consideration for the role of non-linear and voltage-dependent membrane properties. To address these issues, we studied fluctuation-based modulation of input-output responses in medial entorhinal cortical (MEC) stellate cells of rats, which express strong sub-threshold non-linear membrane properties. Using in vitro recordings, dynamic clamp and modeling, we show that the modulation of input-output responses by random voltage fluctuations in stellate cells is significantly limited. In stellate cells, a voltage-dependent increase in membrane resistance at sub-threshold voltages mediated by Na+ conductance activation limits the ability of fluctuations to elicit spikes. Similarly, in exponential leaky integrate-and-fire models using a shallow voltage-dependence for the exponential term that matches stellate cell membrane properties, a low degree of fluctuation-based modulation of input-output responses can be attained. These results demonstrate that fluctuation-based modulation of input-output responses is not a universal feature of neurons and can be significantly limited by subthreshold voltage-gated conductances. PMID:25909971

Non-linear Membrane Properties in Entorhinal Cortical Stellate Cells Reduce Modulation of Input-Output Responses by Voltage Fluctuations.

PubMed

Fernandez, Fernando R; Malerba, Paola; White, John A

2015-04-01

The presence of voltage fluctuations arising from synaptic activity is a critical component in models of gain control, neuronal output gating, and spike rate coding. The degree to which individual neuronal input-output functions are modulated by voltage fluctuations, however, is not well established across different cortical areas. Additionally, the extent and mechanisms of input-output modulation through fluctuations have been explored largely in simplified models of spike generation, and with limited consideration for the role of non-linear and voltage-dependent membrane properties. To address these issues, we studied fluctuation-based modulation of input-output responses in medial entorhinal cortical (MEC) stellate cells of rats, which express strong sub-threshold non-linear membrane properties. Using in vitro recordings, dynamic clamp and modeling, we show that the modulation of input-output responses by random voltage fluctuations in stellate cells is significantly limited. In stellate cells, a voltage-dependent increase in membrane resistance at sub-threshold voltages mediated by Na+ conductance activation limits the ability of fluctuations to elicit spikes. Similarly, in exponential leaky integrate-and-fire models using a shallow voltage-dependence for the exponential term that matches stellate cell membrane properties, a low degree of fluctuation-based modulation of input-output responses can be attained. These results demonstrate that fluctuation-based modulation of input-output responses is not a universal feature of neurons and can be significantly limited by subthreshold voltage-gated conductances.

Nonlinear magnetoelectric effects at high magnetic field amplitudes in composite multiferroics

NASA Astrophysics Data System (ADS)

Fetisov, L. Y.; Burdin, D. A.; Ekonomov, N. A.; Chashin, D. V.; Zhang, J.; Srinivasan, G.; Fetisov, Y. K.

2018-04-01

Magnetoelectric effects (ME) in ferromagnetic-ferroelectric layered composites arise due to magnetostriction and piezoelectric effect in the ferroic phases and are mediated by mechanical strain. The ME coupling strength in such composites could be measured by electrical response to an applied ac magnetic field h and a bias magnetic field H. The coupling, in general, is linear for small ac field amplitudes, but one expects nonlinear ME interactions for high field strengths since the dependence of magnetostriction λ on magnetic fields is nonlinear. Here we report on nonlinear voltage response of a composite of ferromagnetic Metglas and piezoelectric lanthanum gallium tantalate (langatate) subjected to an ac and a bias magnetic fields, resulting in the generation of voltages at harmonics of the frequency of h. The dependences of the ME voltage of the first four harmonics on the magnetic fields for H  =  0–20 Oe and h  =  0–50 Oe were measured. Up to a hundred harmonics were observed in the voltage versus frequency spectra and was indicative of high nonlinearity of the ME coupling in the multiferroic structure. It is shown that for h smaller than the saturation magnetic field H S for magnetostriction in the ferromagnetic layer, the amplitudes of the ME voltages are proportional to the derivatives of λ with respect to H and show a power-law dependence on the pumping field amplitude A n (H) ~ λ (n)(H)h n . We discuss a procedure for estimating the amplitudes of the harmonics for large pumping fields h, on the order of H S. The nonlinear ME effects in the composites are of interest for application in signal processing devices and highly sensitive magnetic field sensors.

Characterisation of Nd2O3 thick gate dielectric for silicon

NASA Astrophysics Data System (ADS)

Dakhel, A. A.

2004-03-01

Thin neodymium films were prepared by the reactive synthesis method on Si (P) substrates to form MOS devices. The oxide films were characterised by UV absorption spectroscopy, X-ray fluorescence (EDXRF) and X-ray diffraction (XRD). The ac conductance and capacitance of the devices were studied as a function of frequency in the range 100 Hz-100 kHz, of temperature in the range 293-473 K and of gate voltage. It was proved that a suitable formalism to explain the frequency dependence of the ac conductivity and capacitance of the insulator is controlled by a universal power law based on the relaxation processes of the hopping or tunnelling of the current carriers between equilibrium sites. The temperature dependence of the ac conductance at the accumulation state shows a small activation energy of about 0.07 eV for a MOS device with amorphous neodymium oxide. The temperature dependence of the accumulation capacitance for a MOS structure with crystalline neodymium oxide shows a maximum at about 390 K; such a maximum was not observed for the structure with amorphous neodymium oxide. The method of capacitance-gate voltage (C-Vg) measurements was used to investigate the effect of annealing in air and in vacuum on the surface density of states (Nss) at the insulator/semiconductor (I/S) interface. It was concluded that the density of surface states in the mid-gap increases by about five times while the density of the trapped charges in the oxide layer decreases by about eight times when the oxide crystallises into a polycrystalline structure.

Memristor-integrated voltage-stabilizing supercapacitor system.

PubMed

Liu, Bin; Liu, Boyang; Wang, Xianfu; Wu, Xinghui; Zhao, Wenning; Xu, Zhimou; Chen, Di; Shen, Guozhen

2014-08-06

Voltage-stabilized supercapacitors: A single supercapacitor formed with PCBM/Pt/IPS nanorod-array electrodes is designed and delivers enhanced areal capacitance, capacitance retention, and excellent electrical stability under bending, while a significant voltage-decrease is observed during the discharging process. Once integrated with the memristor, the memristor-integrated supercapacitor systems deliver an extremely low voltage-drop, indicating greatly enhanced voltage-stabilizing features. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Artificial sensory hairs based on the flow sensitive receptor hairs of crickets

NASA Astrophysics Data System (ADS)

Dijkstra, M.; van Baar, J. J.; Wiegerink, R. J.; Lammerink, T. S. J.; de Boer, J. H.; Krijnen, G. J. M.

2005-07-01

This paper presents the modelling, design, fabrication and characterization of flow sensors based on the wind-receptor hairs of crickets. Cricket sensory hairs are highly sensitive to drag-forces exerted on the hair shaft. Artificial sensory hairs have been realized in SU-8 on suspended SixNy membranes. The movement of the membranes is detected capacitively. Capacitance versus voltage, frequency dependence and directional sensitivity measurements have been successfully carried out on fabricated sensor arrays, showing the viability of the concept.

From zebrafish to mammal: functional evolution of prestin, the motor protein of cochlear outer hair cells.

PubMed

Tan, Xiaodong; Pecka, Jason L; Tang, Jie; Okoruwa, Oseremen E; Zhang, Qian; Beisel, Kirk W; He, David Z Z

2011-01-01

Prestin is the motor protein of cochlear outer hair cells. It belongs to a distinct anion transporter family called solute carrier protein 26A, or SLC26A. Members of this family serve two fundamentally distinct functions. Although most members transport different anion substrates across a variety of epithelia, prestin (SLC26A5) is unique, functioning as a voltage-dependent motor protein. Recent evidence suggests that prestin orthologs from zebrafish and chicken are electrogenic divalent/chloride anion exchangers/transporters with no motor function. These studies appear to suggest that prestin was evolved from an anion transporter. We examined the motor and transport functions of prestin and its orthologs from four different species in the vertebrate lineage, to gain insights of how these two physiological functions became distinct. Somatic motility, voltage-dependent nonlinear capacitance (NLC), and transporter function were measured in transfected human embryonic kidney (HEK) cells using voltage-clamp and anion uptake techniques. Zebrafish and chicken prestins both exhibited weak NLC, with peaks significantly shifted in the depolarization (right) direction. This was contrasted by robust NLC with peaks left shifted in the platypus and gerbil. The platypus and gerbil prestins retained little transporter function compared with robust anion transport capacities in the zebrafish and chicken orthologs. Somatic motility was detected only in the platypus and gerbil prestins. There appears to be an inverse relationship between NLC and anion transport functions, whereas motor function appears to have emerged only in mammalian prestin. Our results suggest that motor function is an innovation of therian prestin and is concurrent with diminished transporter capabilities.

Programmable differential capacitance-to-voltage converter for MEMS accelerometers

NASA Astrophysics Data System (ADS)

Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

2017-05-01

Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

Disinfection by electrohydraulic treatment.

PubMed

Allen, M; Soike, K

1967-04-28

Electrohydraulic treatment was applied to suspensions of Escherichia coli, spores of Bacillus subtilis var. niger, Saccharomyces cerevisiae, and bacteriophage T2 at an input energy that, in most cases, was below the energy required to sterilize. The input energy was held relatively constant for each of these microorganisms, but the capacitance and voltage were varied. Data are presented which show the degree of disinfection as a function of capacitance and voltage. In all cases, the degree of disinfection for a given input energy increases as both capacitance and voltage are lowered.

Permanent split capacitor single phase electric motor system

DOEpatents

Kirschbaum, Herbert S.

1984-01-01

A permanent split capacitor single phase electric motor achieves balanced operation at more than one operating point by adjusting the voltage supplied to the main and auxiliary windings and adjusting the capacitance in the auxiliary winding circuit. An intermediate voltage tap on an autotransformer supplies voltage to the main winding for low speed operation while a capacitive voltage divider is used to adjust the voltage supplied to the auxiliary winding for low speed operation.

Improved Signal Chains for Readout of CMOS Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Hancock, Bruce; Cunningham, Thomas

2009-01-01

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

The Chemical Capacitance as a Fingerprint of Defect Chemistry in Mixed Conducting Oxides.

PubMed

Fleig, Juergen; Schmid, Alexander; Rupp, Ghislain M; Slouka, Christoph; Navickas, Edvinas; Andrejs, Lukas; Hutter, Herbert; Volgger, Lukas; Nenning, Andreas

2016-01-01

The oxygen stoichiometry of mixed conducting oxides depends on the oxygen chemical potential and thus on the oxygen partial pressure in the gas phase. Also voltages may change the local oxygen stoichiometry and the amount to which such changes take place is quantified by the chemical capacitance of the sample. Impedance spectroscopy can be used to probe this chemical capacitance. Impedance measurements on different oxides ((La,Sr)FeO3-δ = LSF, Sr(Ti,Fe)O3-δ = STF, and Pb(Zr,Ti)O3 = PZT) are presented, and demonstrate how the chemical capacitance may affect impedance spectra in different types of electrochemical cells. A quantitative analysis of the spectra is based on generalized equivalent circuits developed for mixed conducting oxides by J. Jamnik and J. Maier. It is discussed how defect chemical information can be deduced from the chemical capacitance.

Improving accuracy of electrochemical capacitance and solvation energetics in first-principles calculations

NASA Astrophysics Data System (ADS)

Sundararaman, Ravishankar; Letchworth-Weaver, Kendra; Schwarz, Kathleen A.

2018-04-01

Reliable first-principles calculations of electrochemical processes require accurate prediction of the interfacial capacitance, a challenge for current computationally efficient continuum solvation methodologies. We develop a model for the double layer of a metallic electrode that reproduces the features of the experimental capacitance of Ag(100) in a non-adsorbing, aqueous electrolyte, including a broad hump in the capacitance near the potential of zero charge and a dip in the capacitance under conditions of low ionic strength. Using this model, we identify the necessary characteristics of a solvation model suitable for first-principles electrochemistry of metal surfaces in non-adsorbing, aqueous electrolytes: dielectric and ionic nonlinearity, and a dielectric-only region at the interface. The dielectric nonlinearity, caused by the saturation of dipole rotational response in water, creates the capacitance hump, while ionic nonlinearity, caused by the compactness of the diffuse layer, generates the capacitance dip seen at low ionic strength. We show that none of the previously developed solvation models simultaneously meet all these criteria. We design the nonlinear electrochemical soft-sphere solvation model which both captures the capacitance features observed experimentally and serves as a general-purpose continuum solvation model.

Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sermage, B.; Essa, Z.; Taleb, N.

2016-04-21

The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, wemore » show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.« less

Phase-Discriminating Capacitive Sensor System

NASA Technical Reports Server (NTRS)

Vranish, John M.; Rahim, Wadi

1993-01-01

Crosstalk eliminated by maintaining voltages on all electrodes at same amplitude, phase, and frequency. Each output feedback-derived control voltage, change of which indicates proximity-induced change in capacitance of associated sensing electrode. Sensors placed close together, enabling imaging of sort. Images and/or output voltages used to guide robots in proximity to various objects.

Permanent split capacitor single phase electric motor system

DOEpatents

Kirschbaum, H.S.

1984-08-14

A permanent split capacitor single phase electric motor achieves balanced operation at more than one operating point by adjusting the voltage supplied to the main and auxiliary windings and adjusting the capacitance in the auxiliary winding circuit. An intermediate voltage tap on an autotransformer supplies voltage to the main winding for low speed operation while a capacitive voltage divider is used to adjust the voltage supplied to the auxiliary winding for low speed operation. 4 figs.

Evaluation of a high power inverter for potential space applications

NASA Technical Reports Server (NTRS)

Guynes, B. V.; Lanier, J. R., Jr.

1976-01-01

The ADM-006 inverter discussed utilizes a unique method of using power switching circuits to produce three-phase low harmonic content voltages without any significant filtering. This method is referred to as the power center approach to inverter design and is explained briefly. The results are presented of tests performed by MSFC to evaluate inverter performance, especially when required to provide power to nonlinear loads such as half or full wave rectified loads with capacitive filtering. Test preocedures and results are described. These tests show that the power center inverter essentially met or exceeded all of claims excluding voltage regulation (3.9 percent versus specified 3.3 percent) and would be a good candidate for high power inverter applications such as may be found on Space Station, Spacelab, etc.

Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements

NASA Astrophysics Data System (ADS)

To, A.; Hoex, B.

2017-11-01

A novel method for the extraction of fixed interface charge, Qf, and the surface recombination parameters, Sn0 and Sp0, from the injection-level dependent effective minority carrier lifetime measurements is presented. Unlike conventional capacitance-voltage measurements, this technique can be applied to highly doped surfaces provided the surface carrier concentration transitions into strong depletion or inversion with increased carrier injection. By simulating the injection level dependent Auger-corrected inverse lifetime curve of symmetrically passivated and diffused samples after sequential annealing and corona charging, it was revealed that Qf, Sn0, and Sp0 have unique signatures. Therefore, these important electronic parameters, in some instances, can independently be resolved. Furthermore, it was shown that this non-linear lifetime behaviour is exhibited on both p-type and n-type diffused inverted surfaces, by demonstrating the approach with phosphorous diffused n+pn+ structures and boron diffused p+np+ structures passivated with aluminium oxide (AlOx) and silicon nitride, respectively (SiNx). The results show that the approximation of a mid-gap Shockley-Read-Hall defect level with equal capture cross sections is able to, in the samples studied in this work, reproduce the observed injection level dependent lifetime behaviour.

Frequency Dependence of Low-Voltage Electrowetting Investigated by Impedance Spectroscopy.

PubMed

Li, Ying-Jia; Cahill, Brian P

2017-11-14

An electrowetting-on-dielectric (EWOD) electrode was developed that facilitates the use of low alternating voltages (≤5 V AC ). This allows online investigation of the frequency dependence of electrowetting by means of impedance spectroscopy. The EWOD electrode is based on a dielectric bilayer consisting of an anodic tantalum pentoxide (Ta 2 O 5 ) thin film (d = 59.35 nm) with a high relative permittivity (ε d = 26.3) and a self-assembled hydrophobic silane monolayer. The frequency dependence of electrowetting was studied using an aqueous μL-sized sessile droplet on the planar EWOD electrode in oil. Experiments using electrochemical impedance spectroscopy and optical imaging indicate the frequency dependence of all three variables in the Young-Lippmann equation: the voltage drop across the dielectric layers, capacitance per unit area, and contact angle under voltage. The electrowetting behavior induced by AC voltages is shown to be well described by the Young-Lippmann equation for AC applications below a frequency threshold. Moreover, the dielectric layers act as a capacitor and the stored electrostatic potential energy is revealed to only partially contribute to the electrowetting.

Capacitance-type blade-tip clearance measurement system using a dual amplifier with ramp/dc inputs and integration

NASA Technical Reports Server (NTRS)

Sarma, Garimella R.; Barranger, John P.

1992-01-01

The analysis and prototype results of a dual-amplifier circuit for measuring blade-tip clearance in turbine engines are presented. The capacitance between the blade tip and mounted capacitance electrode within a guard ring of a probe forms one of the feedback elements of an operational amplifier (op amp). The differential equation governing the circuit taking into consideration the nonideal features of the op amp was formulated and solved for two types of inputs (ramp and dc) that are of interest for the application. Under certain time-dependent constraints, it is shown that (1) with a ramp input the circuit has an output voltage proportional to the static tip clearance capacitance, and (2) with a dc input, the output is proportional to the derivative of the clearance capacitance, and subsequent integration recovers the dynamic capacitance. The technique accommodates long cable lengths and environmentally induced changes in cable and probe parameters. System implementation for both static and dynamic measurements having the same high sensitivity is also presented.

Capacitance-type blade-tip clearance measurement system using a dual amplifier with ramp/dc inputs and integration

NASA Astrophysics Data System (ADS)

Sarma, Garimella R.; Barranger, John P.

1992-10-01

The analysis and prototype results of a dual-amplifier circuit for measuring blade-tip clearance in turbine engines are presented. The capacitance between the blade tip and mounted capacitance electrode within a guard ring of a probe forms one of the feedback elements of an operational amplifier (op amp). The differential equation governing the circuit taking into consideration the nonideal features of the op amp was formulated and solved for two types of inputs (ramp and dc) that are of interest for the application. Under certain time-dependent constraints, it is shown that (1) with a ramp input the circuit has an output voltage proportional to the static tip clearance capacitance, and (2) with a dc input, the output is proportional to the derivative of the clearance capacitance, and subsequent integration recovers the dynamic capacitance. The technique accommodates long cable lengths and environmentally induced changes in cable and probe parameters. System implementation for both static and dynamic measurements having the same high sensitivity is also presented.

MEMS for vibration energy harvesting

NASA Astrophysics Data System (ADS)

Li, Lin; Zhang, Yangjian; San, Haisheng; Guo, Yinbiao; Chen, Xuyuan

2008-03-01

In this paper, a capacitive vibration-to-electrical energy harvester was designed. An integrated process flow for fabricating the designed capacitive harvester is presented. For overcoming the disadvantage of depending on external power source in capacitive energy harvester, two parallel electrodes with different work functions are used as the two electrodes of the capacitor to generate a build-in voltage for initially charging the capacitor. The device is a sandwich structure of silicon layer in two glass layers with area of about 1 cm2. The silicon structure is fabricated by using silicon-on-insulator (SOI) wafer. The glass wafers are anodic bonded on to both sides of the SOI wafer to create a vacuum sealed package.

Contribution of crosstalk to the uncertainty of electrostatic actuator calibrations.

PubMed

Shams, Qamar A; Soto, Hector L; Zuckerwar, Allan J

2009-09-01

Crosstalk in electrostatic actuator calibrations is defined as the ratio of the microphone response to the actuator excitation voltage at a given frequency with the actuator polarization voltage turned off to the response, at the excitation frequency, with the polarization voltage turned on. It consequently contributes to the uncertainty of electrostatic actuator calibrations. Two sources of crosstalk are analyzed: the first attributed to the stray capacitance between the actuator electrode and the microphone backplate, and the second to the ground resistance appearing as a common element in the actuator excitation and microphone input loops. Measurements conducted on 1/4, 1/2, and 1 in. air condenser microphones reveal that the crosstalk has no frequency dependence up to the membrane resonance frequency and that the level of crosstalk lies at about -60 dB for all three microphones-conclusions that are consistent with theory. The measurements support the stray capacitance model. The contribution of crosstalk to the measurement standard uncertainty of an electrostatic actuator calibration is therewith 0.01 dB.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

NASA Astrophysics Data System (ADS)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Profiling of barrier capacitance and spreading resistance using a transient linearly increasing voltage technique.

PubMed

Gaubas, E; Ceponis, T; Kusakovskij, J

2011-08-01

A technique for the combined measurement of barrier capacitance and spreading resistance profiles using a linearly increasing voltage pulse is presented. The technique is based on the measurement and analysis of current transients, due to the barrier and diffusion capacitance, and the spreading resistance, between a needle probe and sample. To control the impact of deep traps in the barrier capacitance, a steady state bias illumination with infrared light was employed. Measurements of the spreading resistance and barrier capacitance profiles using a stepwise positioned probe on cross sectioned silicon pin diodes and pnp structures are presented.

Performance, stability and operation voltage optimization of screen-printed aqueous supercapacitors

PubMed Central

Lehtimäki, Suvi; Railanmaa, Anna; Keskinen, Jari; Kujala, Manu; Tuukkanen, Sampo; Lupo, Donald

2017-01-01

Harvesting micropower energy from the ambient environment requires an intermediate energy storage, for which printed aqueous supercapacitors are well suited due to their low cost and environmental friendliness. In this work, a systematic study of a large set of devices is used to investigate the effect of process variability and operating voltage on the performance and stability of screen printed aqueous supercapacitors. The current collectors and active layers are printed with graphite and activated carbon inks, respectively, and aqueous NaCl used as the electrolyte. The devices are characterized through galvanostatic discharge measurements for quantitative determination of capacitance and equivalent series resistance (ESR), as well as impedance spectroscopy for a detailed study of the factors contributing to ESR. The capacitances are 200–360 mF and the ESRs 7.9–12.7 Ω, depending on the layer thicknesses. The ESR is found to be dominated by the resistance of the graphite current collectors and is compatible with applications in low-power distributed electronics. The effects of different operating voltages on the capacitance, leakage and aging rate of the supercapacitors are tested, and 1.0 V found to be the optimal choice for using the devices in energy harvesting applications. PMID:28382962

Modeling and Simulation of a Parametrically Resonant Micromirror With Duty-Cycled Excitation.

PubMed

Shahid, Wajiha; Qiu, Zhen; Duan, Xiyu; Li, Haijun; Wang, Thomas D; Oldham, Kenn R

2014-12-01

High frequency large scanning angle electrostatically actuated microelectromechanical systems (MEMS) mirrors are used in a variety of applications involving fast optical scanning. A 1-D parametrically resonant torsional micromirror for use in biomedical imaging is analyzed here with respect to operation by duty-cycled square waves. Duty-cycled square wave excitation can have significant advantages for practical mirror regulation and/or control. The mirror's nonlinear dynamics under such excitation is analyzed in a Hill's equation form. This form is used to predict stability regions (the voltage-frequency relationship) of parametric resonance behavior over large scanning angles using iterative approximations for nonlinear capacitance behavior of the mirror. Numerical simulations are also performed to obtain the mirror's frequency response over several voltages for various duty cycles. Frequency sweeps, stability results, and duty cycle trends from both analytical and simulation methods are compared with experimental results. Both analytical models and simulations show good agreement with experimental results over the range of duty cycled excitations tested. This paper discusses the implications of changing amplitude and phase with duty cycle for robust open-loop operation and future closed-loop operating strategies.

Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

2017-03-01

We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

IMPEDANCE ALARM SYSTEM

DOEpatents

Cowen, R.G.

1959-09-29

A description is given of electric protective systems and burglar alarm systems of the capacitance type in which the approach of an intruder at a place to be protected varies the capacitance in an electric circuit and the change is thereafter communicated to a remote point to actuate an alarm. According to the invention, an astable transitor multi-vibrator has the amplitude at its output voltage controlled by a change in the sensing capacitance. The sensing capacitance is effectively connected between collector and base of one stage of the multivibrator circuit through the detector-to-monitor line. The output of the detector is a small d-c voltage across the detector-to-monitor line. This d- c voltage is amplified and monitored at the other end of the line, where an appropriate alarm is actuated if a sudden change in the voltage occurs. The present system has a high degree of sensitivity and is very difficult to defeat by known techniques.

Generation of a pulsed low-energy electron beam using the channel spark device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elgarhy, M. A. I., E-mail: elgarhy@azhar.edu.eg; Hassaballa, S. E.; Rashed, U. M.

2015-12-15

For the generation of low-energy electron beam, the design and characteristics of channel spark discharge (CSD) operating at a low voltage are presented in this paper. The discharge voltage, discharge current, X-ray emissions, and electron beam current were experimentally determined. The effects of the applied voltage, working gas pressure, and external capacitance on the CSD and beam parameters were measured. At an applied voltage of 11 kV, an oxygen gas pressure of 25 mTorr, and an external capacitance of 16.45 nF, the maximum measured current was 900 A. The discharge current increased with the increase in the pressure and capacitance,more » while its periodic time decreased with the increase in the pressure. Two types of the discharge were identified and recorded: the hollow cathode discharge and the conduction discharge. A Faraday cup was used to measure the beam current. The maximum measured beam current was 120 A, and the beam signal exhibited two peaks. The increase in both the external capacitance and the applied discharge voltage increased the maximum electron beam current. The electron-beam pulse time decreased with the increase in the gas pressure at a constant voltage and increased with the decrease in the applied discharge voltage. At an applied voltage of 11 kV and an oxygen gas pressure of 15 mTorr, the maximum beam energy was 2.8 keV. The X-ray signal intensity decreased with the increase in the gas pressure and increased with the increase in the capacitance.« less

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Köhler, K.; Pletschen, W.; Godejohann, B.

2015-11-28

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al{sub 0.3}Ga{sub 0.7}N layer growth. For frequencies below 10{sup 8} Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation betweenmore » frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the entire measured range by combining both models. Based on our results, we see contributions to the two-dimensional electron gas for our samples from surface states (80%) as well as from background doping in the Al{sub 0.3}Ga{sub 0.7}N barriers (20%). The specific resistance of the layers below the gate is above 10{sup 5} Ω cm for both samples and increases with increasing negative bias, i.e., the layers below the gate are essentially depleted. We propose that the resistance due to free charge carriers, determined by the Drude model, is located between gate and drain and, because of the AlN interlayer, the resistance is lowered by a factor of about 30 if compared to the sample without an AlN layer.« less

Discharging dynamics in an electrolytic cell

NASA Astrophysics Data System (ADS)

Feicht, Sarah E.; Frankel, Alexandra E.; Khair, Aditya S.

2016-07-01

We analyze the dynamics of a discharging electrolytic cell comprised of a binary symmetric electrolyte between two planar, parallel blocking electrodes. When a voltage is initially applied, ions in the electrolyte migrate towards the electrodes, forming electrical double layers. After the system reaches steady state and the external current decays to zero, the applied voltage is switched off and the cell discharges, with the ions eventually returning to a uniform spatial concentration. At voltages on the order of the thermal voltage VT=kBT /q ≃25 mV, where kB is Boltzmann's constant, T is temperature, and q is the charge of a proton, experiments on surfactant-doped nonpolar fluids observe that the temporal evolution of the external current during charging and discharging is not symmetric [V. Novotny and M. A. Hopper, J. Electrochem. Soc. 126, 925 (1979), 10.1149/1.2129195; P. Kornilovitch and Y. Jeon, J. Appl. Phys. 109, 064509 (2011), 10.1063/1.3554445]. In fact, at sufficiently large voltages (several VT), the current during discharging is no longer monotonic: it displays a "reverse peak" before decaying in magnitude to zero. We analyze the dynamics of discharging by solving the Poisson-Nernst-Planck equations governing ion transport via asymptotic and numerical techniques in three regimes. First, in the "linear regime" when the applied voltage V is formally much less than VT, the charging and discharging currents are antisymmetric in time; however, the potential and charge density profiles during charging and discharging are asymmetric. The current evolution is on the R C timescale of the cell, λDL /D , where L is the width of the cell, D is the diffusivity of ions, and λD is the Debye length. Second, in the (experimentally relevant) thin-double-layer limit ɛ =λD/L ≪1 , there is a "weakly nonlinear" regime defined by VT≲V ≲VTln(1 /ɛ ) , where the bulk salt concentration is uniform; thus the R C timescale of the evolution of the current magnitude persists. However, nonlinear, voltage-dependent, capacitance of the double layer is responsible for a break in temporal antisymmetry of the charging and discharging currents. Third, the reverse peak in the discharging current develops in a "strongly nonlinear" regime V ≳VTln(1 /ɛ ) , driven by neutral salt adsorption into the double layers and consequent bulk depletion during charging. The strongly nonlinear regime features current evolution over three timescales. The current decays in magnitude on the double layer relaxation timescale, λD2/D ; then grows exponentially in time towards the reverse peak on the diffusion timescale, L2/D , indicating that the reverse peak is the results of fast diffusion of ions from the double layer layer to the bulk. Following the reverse peak, the current decays exponentially to zero on the R C timescale. Notably, the current at the reverse peak and the time of the reverse peak saturate at large voltages V ≫VTln(1 /ɛ ) . We provide semi-analytic expressions for the saturated reverse peak time and current, which can be used to infer charge carrier diffusivity and concentration from experiments.

One-dimensional Numerical Model of Transient Discharges in Air of a Spatial Plasma Ignition Device

NASA Astrophysics Data System (ADS)

Saceleanu, Florin N.

This thesis examines the modes of discharge of a plasma ignition device. Oscilloscope data of the discharge voltage and current are analyzed for various pressures in air at ambient temperature. It is determined that the discharge operates in 2 modes: a glow discharge and a postulated streamer discharge. Subsequently, a 1-dimensional fluid simulation of plasma using the finite volume method (FVM) is developed to gain insight into the particle kinetics. Transient results of the simulation agree with theories of electric discharges; however, quasi-steady state results were not reached due to high diffusion time of ions in air. Next, an ordinary differential equation (ODE) is derived to understand the discharge transition. Simulated results were used to estimate the voltage waveform, which describes the ODE's forcing function; additional simulated results were used to estimate the discharge current and the ODE's non-linearity. It is found that the ODE's non-linearity increases exponentially for capacitive discharges. It is postulated that the non-linearity defines the mode transition observed experimentally. The research is motivated by Spatial Plasma Discharge Ignition (SPDI), an innovative ignition system postulated to increase combustion efficiency in automobile engines for up to 9%. The research thus far can only hypothesize SPDI's benefits on combustion, based on the literature review and the modes of discharge.

A non-linear piezoelectric actuator calibration using N-dimensional Lissajous figure

NASA Astrophysics Data System (ADS)

Albertazzi, A.; Viotti, M. R.; Veiga, C. L. N.; Fantin, A. V.

2016-08-01

Piezoelectric translators (PZTs) are very often used as phase shifters in interferometry. However, they typically present a non-linear behavior and strong hysteresis. The use of an additional resistive or capacitive sensor make possible to linearize the response of the PZT by feedback control. This approach works well, but makes the device more complex and expensive. A less expensive approach uses a non-linear calibration. In this paper, the authors used data from at least five interferograms to form N-dimensional Lissajous figures to establish the actual relationship between the applied voltages and the resulting phase shifts [1]. N-dimensional Lissajous figures are formed when N sinusoidal signals are combined in an N-dimensional space, where one signal is assigned to each axis. It can be verified that the resulting Ndimensional ellipsis lays in a 2D plane. By fitting an ellipsis equation to the resulting 2D ellipsis it is possible to accurately compute the resulting phase value for each interferogram. In this paper, the relationship between the resulting phase shift and the applied voltage is simultaneously established for a set of 12 increments by a fourth degree polynomial. The results in speckle interferometry show that, after two or three interactions, the calibration error is usually smaller than 1°.

Module Eleven: Capacitance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn about another circuit quantity, capacitance, and discover the effects of this component on circuit current, voltage, and power. The module is divided into seven lessons: the capacitor, theory of capacitance, total capacitance, RC (resistive-capacitive circuit) time constant, capacitive reactance, phase and…

Conductivity Variation Observed by Polarization and Depolarization Current Measurements of High-Voltage Equipment Insulation System

NASA Astrophysics Data System (ADS)

Jamail, Nor Akmal Mohd; Piah, Mohamed Afendi Mohamed; Muhamad, Nor Asiah

2012-09-01

Nondestructive and time domain dielectric measurement techniques such as polarization and depolarization current (PDC) measurements have recently been widely used as a potential tool for determining high-voltage insulation conditions by analyzing the insulation conductivity. The variation in the conductivity of an insulator was found to depend on several parameters: the difference between the polarization and depolarization currents, geometric capacitance, and the relative permittivity of the insulation material. In this paper the conductivities of different types of oil-paper insulation material are presented. The insulation conductivities of several types of electrical apparatus were simulated using MATLAB. Conductivity insulation was found to be high at high polarizations and at the lowest depolarization current. It was also found to increase with increasing relative permittivity as well as with decreasing geometric capacitance of the insulating material.

High energy overcurrent protective device

DOEpatents

Praeg, Walter F.

1982-01-01

Electrical loads connected to capacitance elements in high voltage direct current systems are protected from damage by capacitance discharge overcurrents by connecting between the capacitance element and the load, a longitudinal inductor comprising a bifilar winding wound about a magnetic core, which forms an incomplete magnetic circuit. A diode is connected across a portion of the bifilar winding which conducts a unidirectional current only. Energy discharged from the capacitance element is stored in the inductor and then dissipated in an L-R circuit including the diode and the coil winding. Multiple high voltage circuits having capacitance elements may be connected to loads through bifilar windings all wound about the aforementioned magnetic core.

Dissection of the Mechanical Impedance Components of the Outer Hair Cell Using a Chloride-Channel Blocker

NASA Astrophysics Data System (ADS)

Harasztosi, Csaba; Gummer, Anthony W.

2011-11-01

The voltage-dependent chloride-channel blocker anthracene-9-carboxylic acid (9AC) has been found to reduce the imaginary but not the real part of the mechanical impedance of the organ of Corti, suggesting that the effective stiffness of outer hair cells (OHCs) is reduced by 9AC. To examine whether 9AC interacts directly with the motor protein prestin to reduce the membrane component of the impedance, the patch-clamp technique in whole-cell configuration was used to measure the nonlinear capacitance (NLC) of isolated OHCs and, as control, prestin-transfected human embryonic kidney 293 (HEK293) cells. Extracellular application of 9AC significantly reduced the NLC of both OHCs and HEK293 cells. Intracellular 9AC did not influence the blocking effect of the extracellular applied drug. These results suggest that 9AC interacts directly with prestin, reducing the effective stiffness of the motor, and that the interaction is extracellular.

Final report of the supplementary comparison EURAMET.EM-S31 comparison of capacitance and capacitance ratio

NASA Astrophysics Data System (ADS)

Schurr, J.; Fletcher, N.; Gournay, P.; Thévenot, O.; Overney, F.; Johnson, L.; Xie, R.; Dierikx, E.

2017-01-01

Within the framework of the supplementary comparison EURAMET.EM-S31, 'Comparison of capacitance and capacitance ratio', five participants (the BIPM, METAS, LNE, PTB, and VSL) inter-compared their capacitance realisations traced to the quantum Hall resistance measured at either ac or dc. The measurands were the capacitance values of three 10 pF standards and one 100 pF standard, and optionally their voltage and frequency dependences. Because the results were not fully satisfying, the circulation was repeated, augmented by a link to the NMIA calculable capacitor. Also two ac-dc resistors were circulated and their frequency dependences were measured in terms of the ac-dc resistance standards involved in the particular capacitance realisations, to allow inter-comparison of these resistance standards. At the end and in any case, a good agreement is achieved within the expanded uncertainties at coverage factor k = 2. Furthermore, the comparison led to new insight regarding the stability and travelling behaviour of the capacitance standards and, by virtue of the link to the NMIA calculable capacitor, to a determination of the von Klitzing constant in agreement with the 2014 CODATA value. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCEM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

Capacitance probe for detection of anomalies in non-metallic plastic pipe

DOEpatents

Mathur, Mahendra P.; Spenik, James L.; Condon, Christopher M.; Anderson, Rodney; Driscoll, Daniel J.; Fincham, Jr., William L.; Monazam, Esmail R.

2010-11-23

The disclosure relates to analysis of materials using a capacitive sensor to detect anomalies through comparison of measured capacitances. The capacitive sensor is used in conjunction with a capacitance measurement device, a location device, and a processor in order to generate a capacitance versus location output which may be inspected for the detection and localization of anomalies within the material under test. The components may be carried as payload on an inspection vehicle which may traverse through a pipe interior, allowing evaluation of nonmetallic or plastic pipes when the piping exterior is not accessible. In an embodiment, supporting components are solid-state devices powered by a low voltage on-board power supply, providing for use in environments where voltage levels may be restricted.

Multifunctional voltage source inverter for renewable energy integration and power quality conditioning.

PubMed

Dai, NingYi; Lam, Chi-Seng; Zhang, WenChen

2014-01-01

In order to utilize the energy from the renewable energy sources, power conversion system is necessary, in which the voltage source inverter (VSI) is usually the last stage for injecting power to the grid. It is an economical solution to add the function of power quality conditioning to the grid-connected VSI in the low-voltage distribution system. Two multifunctional VSIs are studied in this paper, that is, inductive-coupling VSI and capacitive-coupling VSI, which are named after the fundamental frequency impedance of their coupling branch. The operation voltages of the two VSIs are compared when they are used for renewable energy integration and power quality conditioning simultaneously. The operation voltage of the capacitive-coupling VSI can be set much lower than that of the inductive-coupling VSI when reactive power is for compensating inductive loads. Since a large portion of the loads in the distribution system are inductive, the capacitive-coupling VSI is further studied. The design and control method of the multifunctional capacitive-coupling VSI are proposed in this paper. Simulation and experimental results are provided to show its validity.

Multifunctional Voltage Source Inverter for Renewable Energy Integration and Power Quality Conditioning

PubMed Central

Dai, NingYi; Lam, Chi-Seng; Zhang, WenChen

2014-01-01

In order to utilize the energy from the renewable energy sources, power conversion system is necessary, in which the voltage source inverter (VSI) is usually the last stage for injecting power to the grid. It is an economical solution to add the function of power quality conditioning to the grid-connected VSI in the low-voltage distribution system. Two multifunctional VSIs are studied in this paper, that is, inductive-coupling VSI and capacitive-coupling VSI, which are named after the fundamental frequency impedance of their coupling branch. The operation voltages of the two VSIs are compared when they are used for renewable energy integration and power quality conditioning simultaneously. The operation voltage of the capacitive-coupling VSI can be set much lower than that of the inductive-coupling VSI when reactive power is for compensating inductive loads. Since a large portion of the loads in the distribution system are inductive, the capacitive-coupling VSI is further studied. The design and control method of the multifunctional capacitive-coupling VSI are proposed in this paper. Simulation and experimental results are provided to show its validity. PMID:25177725

Ferroelectric negative capacitance domain dynamics

NASA Astrophysics Data System (ADS)

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2018-05-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

NASA Astrophysics Data System (ADS)

Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

2018-06-01

The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

DBD tranformerless power supplies: impact of the parasitic capacitances on the power transfer.

NASA Astrophysics Data System (ADS)

Diop, M. A.; Belinger, A.; Piquet, H.

2017-04-01

A new transformerless power supply for DBD application is presented here. The power supply is built with 10kV SiC MOSFET. This high voltage switches allow holding the high voltage required by the DBD. An analytical study of the converter’s operation is presented to deduce the power transmitted to the DBD. A comparison between the experimental and theoretical electrical waveforms is shown. The experimental waveforms are particularly affected by all the parasitic capacitances. When all the switches are in OFF state, oscillations cause over-voltages across the switches. An analysis of the effect of each capacitance is presented and demonstrates that the parasitic capacitances of the switches and of the inductance play a key role in the actual power transfer.

Negative capacitance in a ferroelectric capacitor.

PubMed

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Nonlinear magnetoelectric effects in a composite ferromagnetic-piezoelectric structure under harmonic and noise magnetic pumping

NASA Astrophysics Data System (ADS)

Burdin, D. A.; Chashin, D. V.; Ekonomov, N. A.; Fetisov, Y. K.; Stashkevich, A.

2018-03-01

Low-frequency nonlinear magnetoelectric effects in a composite structure comprised of a piezoelectric langatate slab sandwiched between two Metglas amorphous alloy magnetostrictive layers under simultaneous harmonic and noise magnetic pumping have been investigated. It is shown that the frequency fp of harmonic pumping is linearly reproduced in the piezoelectric voltage spectrum accompanied by its higher harmonics. Similarly, narrow-band magnetic noise with a central frequency fN is present in the output piezoelectric voltage along with two noise peaks in the vicinity of a double 2fN and zero frequency. Simultaneous application of harmonic and noise magnetic fields produces a noticeably more complex output voltage spectrum containing additional noise satellite lines at frequencies fp ±fN , 2fp ±fN etc. as well as a noise "pedestal". Amplitudes of voltage spectral components depend on the applied constant bias magnetic field, scaling as magnetostriction derivatives with respect to this field. The effects observed are well described by the theory of magnetic field mixing in magnetoelectric composites with nonlinear dependence of magnetostriction on applied fields.

Analysis of Subthreshold Current Reset Noise in Image Sensors.

PubMed

Teranishi, Nobukazu

2016-05-10

To discuss the reset noise generated by slow subthreshold currents in image sensors, intuitive and simple analytical forms are derived, in spite of the subthreshold current nonlinearity. These solutions characterize the time evolution of the reset noise during the reset operation. With soft reset, the reset noise tends to m k T / 2 C P D when t → ∞ , in full agreement with previously published results. In this equation, C P D is the photodiode (PD) capacitance and m is a constant. The noise has an asymptotic time dependence of t - 1 , even though the asymptotic time dependence of the average (deterministic) PD voltage is as slow as log t . The flush reset method is effective because the hard reset part eliminates image lag, and the soft reset part reduces the noise to soft reset level. The feedback reset with reverse taper control method shows both a fast convergence and a good reset noise reduction. When the feedback amplifier gain, A, is larger, even small value of capacitance, C P , between the input and output of the feedback amplifier will drastically decrease the reset noise. If the feedback is sufficiently fast, the reset noise limit when t → ∞ , becomes m k T ( C P D + C P 1 ) 2 2 q 2 A ( C P D + ( 1 + A ) C P ) in terms of the number of electron in the PD. According to this simple model, if CPD = 10 fF, CP/CPD = 0.01, and A = 2700 are assumed, deep sub-electron rms reset noise is possible.

Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/ n-Si Structures

NASA Astrophysics Data System (ADS)

KInacI, BarIş; Özçelik, Süleyman

2013-06-01

The capacitance-voltage-temperature ( C- V- T) and the conductance/angular frequency-voltage-temperature ( G/ω- V- T) characteristics of Au/TiO2(rutile)/ n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200 K to 380 K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200°C. To improve the crystal quality, the deposited film was annealed at 900°C to promote a phase transition from the amorphous to rutile phase. The C -2 versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration ( N D), Fermi energy level ( E F), depletion layer width ( W D), barrier height ( ф CV), and series resistance ( R S), of Au/TiO2(rutile)/ n-Si SBDs were calculated from the C- V- T and the G/ω- V- T characteristics. The obtained results show that ф CV, R S, and W D values decrease, while E F and N D values increase, with increasing temperature.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

1994-06-28

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, Douglas C.; Marcus, R. Kenneth; Donohue, David L.; Lewis, Trousdale A.

1994-01-01

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

Development of high energy density electrical double layer capacitors

NASA Astrophysics Data System (ADS)

Devarajan, Thamarai selvi

Electrochemical Double Layer capacitors (EDLCs) have shown themselves as a viable energy storage alternative. EDLCs have high power density, faster charge/discharge, wide operating temperature and long cycle life compared to batteries since it stores charge by physical separation. Despites all their advantages, their low energy density stand as a bottleneck for capacitors. This research aims to increase the energy density of EDLC without compromising the power density. Energy is proportional to the square of cell voltage. Cell voltage is mainly dependent on electrolyte breakdown. Electrolytes also provide ions for charge separation and conduction. Therefore various electrolytes (Solutes and Solvents) which can give high concentration, solubility and decomposition potential were characterized in the first part of the research. In that study, a novel ionic liquid OPBF4 had higher capacitance and comparable voltage window compared to commercial TEABF4 in Acetonitrile. However, the increased polarity of the fixed ring O-atom and the ion-ion interaction in OPBF4 was responsible for lowering its conductivity. Oxygenated ionic compounds with alkyl groups had lower stability due to beta elimination between two electron withdrawing atoms. Volume based thermodynamics and quantum chemical calculations were used to calculate ion size, HOMO/LUMO energies, and free energy changes and establish relationship with capacitance, redox potential and melting points respectively. In addition free energy of fusion was used to predict the melting point. Ion size had correlation with capacitance due to compact double layer formation. Free energy changes did not explain the differences in melting point and predicted dielectric constant was inconsistent with the polarity. This is presumably due to using Van der Waals volume instead of crystal structure volume and insufficient incorporation of polarization term. The HOMO/LUMO energies gave direct relation between oxidation and reduction potential at 1mA/cm 2. A brief study on non-polar co-solvents for EDLC was studied. Among the solvents studied, fluorinated solvents had low melting point and viscosity due to incorporation of asymmetry. However, because of low dielectric constant, TEABF4 is insoluble and had to be mixed with other solvents. The mixed fluorinated solvents had slightly higher voltage window due to decreased donicity of lone pairs of electrons. The second approach to increasing energy density is to increase capacitance. Capacitance is mainly dependent on surface area and porosity of electrodes. Nanostructured materials which can offer multiple charge storage are currently of interest. Hence, novel NiSi nanotubes were studied as electrodes for supercapacitor applications. Silicon material has high capacity and these inert electrodes can enable higher capacitance by controlling the porosity and functional groups in specific electrolytes. The Silicon wafers were made porous by anodization using hydrofluoric acid. In order to improve the conductivity, the porous silicon was doped, then plated with Ni using electroless plating method and annealed to form nickel mono silicide. Gold was deposited on the back side of the electrode to enhance conductivity. Our porous NiSi electrodes gave capacitance of about 1185muF /cm2 in 0.5 M H 2SO4. Further investigation of oxide formation and modification of functional groups will help achieve higher capacitance.

Raman spectrum method for characterization of pull-in voltages of graphene capacitive shunt switches

NASA Astrophysics Data System (ADS)

Li, Peng; You, Zheng; Cui, Tianhong

2012-12-01

An approach using Raman spectrum method is reported to measure pull-in voltages of graphene capacitive shunt switches. When the bias excesses the pull-in voltage, the Raman spectrum's intensity largely decreases. Two factors that contribute to the intensity reduction are investigated. Moreover, by monitoring the frequency shift of G peak and 2D band, we are able to detect the pull-in voltage and measure the strain change in graphene beams during switching.

Voltage equalization of an ultracapacitor module by cell grouping using number partitioning algorithm

NASA Astrophysics Data System (ADS)

Oyarbide, E.; Bernal, C.; Molina, P.; Jiménez, L. A.; Gálvez, R.; Martínez, A.

2016-01-01

Ultracapacitors are low voltage devices and therefore, for practical applications, they need to be used in modules of series-connected cells. Because of the inherent manufacturing tolerance of the capacitance parameter of each cell, and as the maximum voltage value cannot be exceeded, the module requires inter-cell voltage equalization. If the intended application suffers repeated fast charging/discharging cycles, active equalization circuits must be rated to full power, and thus the module becomes expensive. Previous work shows that a series connection of several sets of paralleled ultracapacitors minimizes the dispersion of equivalent capacitance values, and also the voltage differences between capacitors. Thus the overall life expectancy is improved. This paper proposes a method to distribute ultracapacitors with a number partitioning-based strategy to reduce the dispersion between equivalent submodule capacitances. Thereafter, the total amount of stored energy and/or the life expectancy of the device can be considerably improved.

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

Static charge outside chamber induces dielectric breakdown of solid-state nanopore membranes

NASA Astrophysics Data System (ADS)

Matsui, Kazuma; Goto, Yusuke; Yanagi, Itaru; Yanagawa, Yoshimitsu; Ishige, Yu; Takeda, Ken-ichi

2018-04-01

Reducing device capacitance is effective for decreasing current noise observed in a solid-state nanopore-based DNA sequencer. On the other hand, we have recently found that voltage stress causes pinhole-like defects in such low-capacitance devices. The origin of voltage stress, however, has not been determined. In this research, we identified that a dominant origin is static charge on the outer surface of a flow cell. Even though the outer surface was not in direct contact with electrolytes in the flow cell, the charge induces high voltage stress on a membrane according to the capacitance coupling ratio of the flow cell to the membrane.

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Measuring charge nonuniformity in MOS devices

NASA Technical Reports Server (NTRS)

Maserjian, J.; Zamani, N.

1980-01-01

Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Comparison of Multilayer Dielectric Thin Films for Future Metal-Insulator-Metal Capacitors: Al2O3/HfO2/Al2O3 versus SiO2/HfO2/SiO2

NASA Astrophysics Data System (ADS)

Park, Sang-Uk; Kwon, Hyuk-Min; Han, In-Shik; Jung, Yi-Jung; Kwak, Ho-Young; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Kang, Chang-Yong; Lee, Byoung-Hun; Jammy, Raj; Lee, Hi-Deok

2011-10-01

In this paper, two kinds of multilayered metal-insulator-metal (MIM) capacitors using Al2O3/HfO2/Al2O3 (AHA) and SiO2/HfO2/SiO2 (SHS) were fabricated and characterized for radio frequency (RF) and analog mixed signal (AMS) applications. The experimental results indicate that the AHA MIM capacitor (8.0 fF/µm2) is able to provide a higher capacitance density than the SHS MIM capacitor (5.1 fF/µm2), while maintaining a low leakage current of about 50 nA/cm2 at 1 V. The quadratic voltage coefficient of capacitance, α gradually decreases as a function of stress time under constant voltage stress (CVS). The parameter variation of SHS MIM capacitors is smaller than that of AHA MIM capacitors. The effects of CVS on voltage linearity and time-dependent dielectric breakdown (TDDB) characteristics were also investigated.

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.

2008-03-15

Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO{sub 2}-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U{sub fb} in an MOS structure with the thickness d = 369 nm subjected to a hydrogen/air gaseous mixture can be accounted for by the formation of dipoles in the Pd-SiO{sub 2} gap due to polarization of hydrogen atoms (H{sub a}). An analytical expression describing the dependence of variation in the flat-band voltage {Delta}U{sub fb}more » on the hydrogen concentration n{sub H{sub 2}} was derived. In MOS structures with d {<=} 4 nm (or MOS diodes), the value of {Delta}U{sub fb} is mainly controlled by passivation of the centers responsible for the presence of the surface acceptor-type centers at the SiO{sub 2}-n-Si interface by hydrogen atoms. Analytical expressions describing the dependences of {Delta}U{sub fb} and the capacitance relaxation time in the space-charge region on n{sub H{sub 2}} are derived. The values of the density of adsorption centers and the adsorption heat for hydrogen atoms at the Pd-SiO{sub 2} and SiO{sub 2}-n-Si interfaces are found.« less

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.

2008-03-15

Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO{sub 2}-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U{sub fb} in an MOS structure with the thickness d = 369 nm subjected to a hydrogen/air gaseous mixture can be accounted for by the formation of dipoles in the Pd-SiO{sub 2} gap due to polarization of hydrogen atoms (H{sub a}). An analytical expression describing the dependence of variation in the flat-band voltage {delta}U{sub fb}more » on the hydrogen concentration n{sub H2} was derived. In MOS structures with d {<=} 4 nm (or MOS diodes), the value of {delta}U{sub fb} is mainly controlled by passivation of the centers responsible for the presence of the surface acceptor-type centers at the SiO{sub 2}-n-Si interface by hydrogen atoms. Analytical expressions describing the dependences of {delta}U{sub fb} and the capacitance relaxation time in the space-charge region on n{sub H2} are derived. The values of the density of adsorption centers and the adsorption heat for hydrogen atoms at the Pd-SiO{sub 2} and SiO{sub 2}-n-Si interfaces are found.« less

Full data acquisition in Kelvin Probe Force Microscopy: Mapping dynamic electric phenomena in real space.

PubMed

Collins, Liam; Belianinov, Alex; Somnath, Suhas; Balke, Nina; Kalinin, Sergei V; Jesse, Stephen

2016-08-12

Kelvin probe force microscopy (KPFM) has provided deep insights into the local electronic, ionic and electrochemical functionalities in a broad range of materials and devices. In classical KPFM, which utilizes heterodyne detection and closed loop bias feedback, the cantilever response is down-sampled to a single measurement of the contact potential difference (CPD) per pixel. This level of detail, however, is insufficient for materials and devices involving bias and time dependent electrochemical events; or at solid-liquid interfaces, where non-linear or lossy dielectrics are present. Here, we demonstrate direct recovery of the bias dependence of the electrostatic force at high temporal resolution using General acquisition Mode (G-Mode) KPFM. G-Mode KPFM utilizes high speed detection, compression, and storage of the raw cantilever deflection signal in its entirety at high sampling rates. We show how G-Mode KPFM can be used to capture nanoscale CPD and capacitance information with a temporal resolution much faster than the cantilever bandwidth, determined by the modulation frequency of the AC voltage. In this way, G-Mode KPFM offers a new paradigm to study dynamic electric phenomena in electroactive interfaces as well as a promising route to extend KPFM to the solid-liquid interface.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

NASA Astrophysics Data System (ADS)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

Modeling and Simulation of a Parametrically Resonant Micromirror With Duty-Cycled Excitation

PubMed Central

Shahid, Wajiha; Qiu, Zhen; Duan, Xiyu; Li, Haijun; Wang, Thomas D.; Oldham, Kenn R.

2014-01-01

High frequency large scanning angle electrostatically actuated microelectromechanical systems (MEMS) mirrors are used in a variety of applications involving fast optical scanning. A 1-D parametrically resonant torsional micromirror for use in biomedical imaging is analyzed here with respect to operation by duty-cycled square waves. Duty-cycled square wave excitation can have significant advantages for practical mirror regulation and/or control. The mirror’s nonlinear dynamics under such excitation is analyzed in a Hill’s equation form. This form is used to predict stability regions (the voltage-frequency relationship) of parametric resonance behavior over large scanning angles using iterative approximations for nonlinear capacitance behavior of the mirror. Numerical simulations are also performed to obtain the mirror’s frequency response over several voltages for various duty cycles. Frequency sweeps, stability results, and duty cycle trends from both analytical and simulation methods are compared with experimental results. Both analytical models and simulations show good agreement with experimental results over the range of duty cycled excitations tested. This paper discusses the implications of changing amplitude and phase with duty cycle for robust open-loop operation and future closed-loop operating strategies. PMID:25506188

High voltage electrochemical double layer capacitors using conductive carbons as additives

NASA Astrophysics Data System (ADS)

Michael, M. S.; Prabaharan, S. R. S.

We describe here an interesting approach towards electrochemical capacitors (ECCs) using graphite materials (as being used as conductive additives in rechargeable lithium-ion battery cathodes) in a Li + containing organic electrolyte. The important result is that we achieved a voltage window of >4 V, which is rather large, compared to the standard window of 2.5 V for ordinary electric double layer capacitors (DLCs). The capacitor performance was evaluated by cyclic voltammetry (CV) and galvanostatic charge/discharge techniques. From charge-discharge studies of the symmetrical device (for instance, SFG6 carbon electrode), a specific capacitance of up to 14.5 F/g was obtained at 16 mA/cm 2 current rate and at a low current rate (3 mA/cm 2), a higher value was obtained (63 F/g). The specific capacitance decreased about 25% after 1000 cycles compared to the initial discharge process. The performances of these graphites are discussed in the light of both double layer capacitance (DLC) and pseudocapacitance (battery-like behavior). The high capacitance obtained was not only derived from the current-transient capacitive behavior but is also attributed to pseudocapacitance associated with some kind of faradaic reaction, which could probably occur due to Li + intercalation/deintercalation reactions into graphitic layers of the carbons used. The ac impedance (electrochemical impedances spectroscopy, EIS) measurements were also carried out to evaluate the capacitor parameters such as equivalent series resistance (ESR) and frequency dependent capacitance ( Cfreq). Cyclic voltammetry measurements were also performed to evaluate the cycling behavior of the carbon electrodes and the non-rectangular shaped voltammograms revealed the non-zero time constant [ τ( RC)≠0] confirming that the current contains a transient as well as steady-state components.

Strategies for dynamic soft-landing in capacitive microelectromechanical switches

NASA Astrophysics Data System (ADS)

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad A.

2011-06-01

Electromechanical dielectric degradation associated with the hard landing of movable electrode is a technology-inhibiting reliability concern for capacitive RF-MEMS switches. In this letter, we propose two schemes for dynamic soft-landing that obviate the need for external feedback circuitry. Instead, the proposed resistive and capacitive braking schemes can reduce impact velocity significantly without compromising other performance characteristics like pull-in voltage and pull-in time. Resistive braking is achieved by inserting a resistance in series with the voltage source whereas capacitive braking requires patterning of the electrode or the dielectric. Our results have important implications to the design and optimization of reliability aware electrostatically actuated MEMS switches.

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE PAGES

Kohno, H.; Myra, J. R.

2017-07-24

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohno, H.; Myra, J. R.

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

MIS capacitor studies on silicon carbide single crystals

NASA Technical Reports Server (NTRS)

Kopanski, J. J.

1990-01-01

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

NASA Astrophysics Data System (ADS)

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-09-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

PubMed Central

Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

2016-01-01

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec. PMID:27641430

Important parameters affecting the cell voltage of aqueous electrical double-layer capacitors

NASA Astrophysics Data System (ADS)

Wu, Tzu-Ho; Hsu, Chun-Tsung; Hu, Chi-Chang; Hardwick, Laurence J.

2013-11-01

This study discusses and demonstrates how the open-circuit potential and charges stored in the working potential window on positive and negative electrodes affect the cell voltage of carbon-based electrical double-layer capacitors (EDLCs) in aqueous electrolytes. An EDLC consisting of two activated carbon electrodes is employed as the model system for identifying these key parameters although the potential window of water decomposition can be simply determined by voltammetric methods. First, the capacitive performances of an EDLC with the same charge on positive and negative electrodes are evaluated by cyclic voltammetric, charge-discharge, electrochemical impedance spectroscopic (EIS) analyses, and inductance-capacitance-resistance meter (LCR meter). The principles for obtaining the highest acceptable cell voltage of such symmetric ECs with excellent reversibility and capacitor-like behaviour are proposed. Aqueous charge-balanced EDLCs can be operated as high as 2.0 V with high energy efficiency (about 90%) and only 4% capacitance loss after the 600-cycle stability checking. The necessity of charge balance (but not capacitance balance) for positive and negative electrodes is substantiated from the lower acceptable cell voltage of charge-unbalanced EDLCs.

Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures

NASA Astrophysics Data System (ADS)

Upadhyay, Bhanu B.; Jha, Jaya; Takhar, Kuldeep; Ganguly, Swaroop; Saha, Dipankar

2018-05-01

We have observed that the estimation of two-dimensional electron gas density is dependent on the device geometry. The geometric contribution leads to the anomalous estimation of the GaN based heterostructure properties. The observed discrepancy is found to originate from the anomalous area dependent capacitance of GaN based Schottky diodes, which is an integral part of the high electron mobility transistors. The areal capacitance density is found to increase for smaller radii Schottky diodes, contrary to a constant as expected intuitively. The capacitance is found to follow a second order polynomial on the radius of all the bias voltages and frequencies considered here. In addition to the quadratic dependency corresponding to the areal component, the linear dependency indicates a peripheral component. It is further observed that the peripheral to areal contribution is inversely proportional to the radius confirming the periphery as the location of the additional capacitance. The peripheral component is found to be frequency dependent and tends to saturate to a lower value for measurements at a high frequency. In addition, the peripheral component is found to vanish when the surface is passivated by a combination of N2 and O2 plasma treatments. The cumulative surface state density per unit length of the perimeter of the Schottky diodes as obtained by the integrated response over the distance between the ohmic and Schottky contacts is found to be 2.75 × 1010 cm-1.

Densification and Electrical Properties of Zinc Oxide Varistors Microwave-Sintered Under Different Oxygen Partial Pressures

NASA Astrophysics Data System (ADS)

Lin, Cong; Wang, Bo; Xu, Zheng; Peng, Hu

2012-11-01

ZnO varistors were prepared by microwave sintering under different oxygen partial pressures. The temperature profile and the densification behavior in different atmospheres were investigated. It was found that the density of ZnO varistors during sintering was the key factor affecting the absorption of microwave energy. The electrical properties, including the nonlinear properties and capacitance-voltage ( C- V) characteristics, were also carefully studied. The results showed that the oxygen partial pressure has significant effects on the electrical properties of ZnO varistors by changing the concentration of defects through a series of reactions involving oxygen during sintering.

RF current sensor

DOEpatents

Moore, James A.; Sparks, Dennis O.

1998-11-10

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.

2017-12-01

Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

Input integration around the dendritic branches in hippocampal dentate granule cells.

PubMed

Kamijo, Tadanobu Chuyo; Hayakawa, Hirofumi; Fukushima, Yasuhiro; Kubota, Yoshiyuki; Isomura, Yoshikazu; Tsukada, Minoru; Aihara, Takeshi

2014-08-01

Recent studies have shown that the dendrites of several neurons are not simple translators but are crucial facilitators of excitatory postsynaptic potential (EPSP) propagation and summation of synaptic inputs to compensate for inherent voltage attenuation. Granule cells (GCs)are located at the gateway for valuable information arriving at the hippocampus from the entorhinal cortex. However, the underlying mechanisms of information integration along the dendrites of GCs in the hippocampus are still unclear. In this study, we investigated the input integration around dendritic branches of GCs in the rat hippocampus. We applied differential spatiotemporal stimulations to the dendrites using a high-speed glutamate-uncaging laser. Our results showed that when two sites close to and equidistant from a branching point were simultaneously stimulated, a nonlinear summation of EPSPs was observed at the soma. In addition, nonlinear summation (facilitation) depended on the stimulus location and was significantly blocked by the application of a voltage-dependent Ca(2+) channel antagonist. These findings suggest that the nonlinear summation of EPSPs around the dendritic branches of hippocampal GCs is a result of voltage-dependent Ca(2+) channel activation and may play a crucial role in the integration of input information.

Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

NASA Astrophysics Data System (ADS)

Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

2017-11-01

This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

Capacitance of the Double Layer Formed at the Metal/Ionic-Conductor Interface: How Large Can It Be?

NASA Astrophysics Data System (ADS)

Skinner, Brian; Loth, M. S.; Shklovskii, B. I.

2010-03-01

The capacitance of the double layer formed at a metal/ionic-conductor interface can be remarkably large, so that the apparent width of the double layer is as small as 0.3 Å. Mean-field theories fail to explain such large capacitance. We propose an alternate theory of the ionic double layer which allows for the binding of discrete ions to their image charges in the metal. We show that at small voltages the capacitance of the double layer is limited only by the weak dipole-dipole repulsion between bound ions, and is therefore very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the mean-field value.

Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

PubMed

Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

2008-08-22

In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

PubMed

Manna, Sujit; Ashok, Vishal D; De, S K

2010-12-01

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.

From MEMRISTOR to MEMImpedance device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wakrim, T.; Univ. Grenoble Alpes, G2Elab, F-38000 Grenoble; Vallée, C., E-mail: christophe.vallee@cea.fr

2016-02-01

The behavior of the capacitance switching of HfO{sub 2} Resistive non-volatile Memories is investigated in view of realizing a MEMImpedance (MEM-Z) device. In such a Metal Insulator Metal structure, the impedance value can be tuned by the adjustment of both resistance and capacitance values. We observe a strong variation of capacitance from positive to negative values in a single layer Metal Insulator Metal device made of HfO{sub 2} deposited by Atomic Layer Deposition, but unfortunately no memory effect is observed. However, in the case of a two layer structure, a device has been obtained with a memory effect where bothmore » resistance and capacitance values can be tuned simultaneously, with a variation of capacitance down to negative values to get an inductive behavior. Negative capacitance values are observed for voltage values near SET voltage. A schematic model based on shaped oxygen vacancy density is proposed to account for this capacitance variation. The oxygen vacancies can be either isolated or connected in the bulk of the oxide.« less

Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories

NASA Astrophysics Data System (ADS)

Basceri, Cem

The electrical and dielectric properties of fiber-textured, MOCVD (Basb{0.7}Srsb{0.3})TiOsb3 (BST) thin film capacitors appropriate for ultra-large scale integration (ULSI) dynamic random access memory (DRAM) applications have been analyzed. Dielectric relaxation, leakage, resistance degradation, and dielectric response phenomena, within a comprehensive matrix of external and material parameters, have been investigated. The phenomenology of the dielectric response of our BST films has been shown to be well-described by Curie-von Schweidler behavior, although the microscopic origin of this behavior has not been presently agreed upon. The time-dependent polarization behavior has been linked to the dispersion in permittivity with respect to frequency. The leakage current through our BST films has been found to be primarily limited by interfacial Schottky barriers whose properties depend on the electrode material, interface microstructure, and deposition conditions. Its temperature and voltage dependence have been interpreted via a thermionic emission model. Analysis in terms of Schottky-barrier limited current flow gave acceptable values for the cathode barrier height. The results have indicated that our BST films, appropriate for DRAM applications, do not possess depletion layers at the film-electrode interfaces. Instead, they must be considered as depleted of charge carriers across their entire thickness. Resistance degradation has been found to be thermally activated and voltage/field dependent. The results have indicated that there is a film thickness effect, which manifests itself as a decrease in the activation energy with respect to temperature for thicker films. A significant stoichiometry effect on the measured resistance degradation lifetimes has been observed. The analyses of the leakage and capacitance-voltage behaviors for the degraded samples have indicated that a demixing of oxygen vacancies occurs during resistance degradation, which causes the Schottky barrier height to decrease, in agreement with the observed relative shift of the peak capacitance as a function of voltage. For all the film thicknesses and compositions studied, extrapolated resistance degradation lifetimes of our BST films, which were obtained by using an appropriate form, are well above the current benchmark of 10 years at the DRAM operating conditions of 1.6 V and 85sp°C. Above the bulk Curie point (˜300 K), the phenomenological approach, i.e., Landau-Ginzburg-Devonshire (LGD) theory, has been demonstrated to account very well for the observed C-V behavior in our BST films. Furthermore, temperature dependent measurements gave evidence that, as expected, the form of the dielectric behavior changes near the bulk Curie point, but that the phase transition appears for some reason to be frustrated. Film thickness has been established to impact primarily the zero-bias permittivity through a thickness dependence of the first order coefficient of the LGD power series. Our analysis does indicate that if it results from a series-connected interfacial layer, that layer must be a nonlinear dielectric, as must the bulk of the film. The dielectric constant has been found to be composition dependent, reaching its highest values for compositions near the stoichiometric values. Furthermore, film stoichiometry has been established to strongly effect both the first order and third order coefficients of the LGD power series.

Understanding Mott-Schottky Measurements under Illumination in Organic Bulk Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Zonno, Irene; Martinez-Otero, Alberto; Hebig, Jan-Christoph; Kirchartz, Thomas

2017-03-01

The Mott-Schottky analysis in the dark is a frequently used method to determine the doping concentration of semiconductors from capacitance-voltage measurements, even for such complex systems as polymer:fullerene blends used for organic solar cells. While the analysis of capacitance-voltage measurements in the dark is relatively well established, the analysis of data taken under illumination is currently not fully understood. Here, we present experiments and simulations to show which physical mechanisms affect the Mott-Schottky analysis under illumination. We show that the mobility of the blend has a major influence on the shape of the capacitance-voltage curve and can be obtained from data taken under reverse bias. In addition, we show that the apparent shift of the built-in voltage observed previously can be explained by a shift of the onset of space-charge-limited collection with illumination intensity.

Impedance analysis of PbS colloidal quantum dot solar cells with different ZnO nanowire lengths

NASA Astrophysics Data System (ADS)

Fukuda, Takeshi; Takahashi, Akihiro; Wang, Haibin; Takahira, Kazuya; Kubo, Takaya; Segawa, Hiroshi

2018-03-01

The photoconversion efficiency of colloidal quantum dot (QD) solar cells has been markedly improved by optimizing the surface passivation and device structure, and details of device physics are now under investigation. In this study, we investigated the resistance and capacitance components at the ZnO/PbS-QD interface and inside a PbS-QD layer by measuring the impedance spectrum while the interface area was controlled by changing the ZnO nanowire length. By evaluating the dependence of optical intensity and DC bias voltage on the ZnO nanowire length, only the capacitance was observed to be influenced by the interface area, and this indicates that photoinduced carriers are generated at the surface of PbS-QD. In addition, since the capacitance is proportional to the surface area of the QD, the interface area can be evaluated from the capacitance. Finally, photovoltaic performance was observed to increase with increasing ZnO nanowire length owing to the large interface area, and this result is in good agreement with the capacitance measurement.

Neuron Morphology Influences Axon Initial Segment Plasticity.

PubMed

Gulledge, Allan T; Bravo, Jaime J

2016-01-01

In most vertebrate neurons, action potentials are initiated in the axon initial segment (AIS), a specialized region of the axon containing a high density of voltage-gated sodium and potassium channels. It has recently been proposed that neurons use plasticity of AIS length and/or location to regulate their intrinsic excitability. Here we quantify the impact of neuron morphology on AIS plasticity using computational models of simplified and realistic somatodendritic morphologies. In small neurons (e.g., dentate granule neurons), excitability was highest when the AIS was of intermediate length and located adjacent to the soma. Conversely, neurons having larger dendritic trees (e.g., pyramidal neurons) were most excitable when the AIS was longer and/or located away from the soma. For any given somatodendritic morphology, increasing dendritic membrane capacitance and/or conductance favored a longer and more distally located AIS. Overall, changes to AIS length, with corresponding changes in total sodium conductance, were far more effective in regulating neuron excitability than were changes in AIS location, while dendritic capacitance had a larger impact on AIS performance than did dendritic conductance. The somatodendritic influence on AIS performance reflects modest soma-to-AIS voltage attenuation combined with neuron size-dependent changes in AIS input resistance, effective membrane time constant, and isolation from somatodendritic capacitance. We conclude that the impact of AIS plasticity on neuron excitability will depend largely on somatodendritic morphology, and that, in some neurons, a shorter or more distally located AIS may promote, rather than limit, action potential generation.

Neuron Morphology Influences Axon Initial Segment Plasticity123

PubMed Central

2016-01-01

In most vertebrate neurons, action potentials are initiated in the axon initial segment (AIS), a specialized region of the axon containing a high density of voltage-gated sodium and potassium channels. It has recently been proposed that neurons use plasticity of AIS length and/or location to regulate their intrinsic excitability. Here we quantify the impact of neuron morphology on AIS plasticity using computational models of simplified and realistic somatodendritic morphologies. In small neurons (e.g., dentate granule neurons), excitability was highest when the AIS was of intermediate length and located adjacent to the soma. Conversely, neurons having larger dendritic trees (e.g., pyramidal neurons) were most excitable when the AIS was longer and/or located away from the soma. For any given somatodendritic morphology, increasing dendritic membrane capacitance and/or conductance favored a longer and more distally located AIS. Overall, changes to AIS length, with corresponding changes in total sodium conductance, were far more effective in regulating neuron excitability than were changes in AIS location, while dendritic capacitance had a larger impact on AIS performance than did dendritic conductance. The somatodendritic influence on AIS performance reflects modest soma-to-AIS voltage attenuation combined with neuron size-dependent changes in AIS input resistance, effective membrane time constant, and isolation from somatodendritic capacitance. We conclude that the impact of AIS plasticity on neuron excitability will depend largely on somatodendritic morphology, and that, in some neurons, a shorter or more distally located AIS may promote, rather than limit, action potential generation. PMID:27022619

Superlattice barrier varactors

NASA Technical Reports Server (NTRS)

Raman, C.; Sun, J. P.; Chen, W. L.; Munns, G.; East, J.; Haddad, G.

1992-01-01

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

PubMed Central

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-01-01

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/Hz at 50 kHz, which corresponds to 100 μg/Hz. PMID:28042830

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

PubMed

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-12-30

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

Role of Copper in the Performance of CdS/CdTe Solar Cells (Poster)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demtsu, S.; Albin, D.; Sites, J.

2006-05-01

The performance of CdS/CdTe solar cells made with evaporated Cu as a primary back contact was studied through current-voltage (JV) at different intensities, quantum efficiency (QE) under light and voltage bias, capacitance-voltage (CV), and drive-level capacitance profiling (DLCP) measurements. The results show that while modest amounts of Cu enhance cell performance, excessive amounts degrade device quality and reduce performance. The analysis is supported with numerical simulations to reproduce and explain some of the experimental results.

Negative Differential Resistance (NDR) frequency conversion with gain

NASA Technical Reports Server (NTRS)

Hwu, R. J.; Alm, R. W.; Lee, S. C.

1992-01-01

The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.

A novel method for identification of lithium-ion battery equivalent circuit model parameters considering electrochemical properties

NASA Astrophysics Data System (ADS)

Zhang, Xi; Lu, Jinling; Yuan, Shifei; Yang, Jun; Zhou, Xuan

2017-03-01

This paper proposes a novel parameter identification method for the lithium-ion (Li-ion) battery equivalent circuit model (ECM) considering the electrochemical properties. An improved pseudo two-dimension (P2D) model is established on basis of partial differential equations (PDEs), since the electrolyte potential is simplified from the nonlinear to linear expression while terminal voltage can be divided into the electrolyte potential, open circuit voltage (OCV), overpotential of electrodes, internal resistance drop, and so on. The model order reduction process is implemented by the simplification of the PDEs using the Laplace transform, inverse Laplace transform, Pade approximation, etc. A unified second order transfer function between cell voltage and current is obtained for the comparability with that of ECM. The final objective is to obtain the relationship between the ECM resistances/capacitances and electrochemical parameters such that in various conditions, ECM precision could be improved regarding integration of battery interior properties for further applications, e.g., SOC estimation. Finally simulation and experimental results prove the correctness and validity of the proposed methodology.

Design of a High Voltage Power Supply Providing a Force Field for a Fluid Experiment

NASA Astrophysics Data System (ADS)

Herty, Frank

2005-05-01

As part of the GeoFlow fluid experiment an ac high voltage power supply (HVPS) is used to establish high electrical fields on fluids based on silicon oil. The non- conductive fluid is encapsulated between two spherical electrodes. This experiment cell assembly acts essentially as a capacitive load.The GeoFlow HVPS is an integrated ac high voltage source capable to provide up to 10kVRMS on capacitive loads up to 100pF.This paper presents major design challenges and solutions regarding the high voltage transformer and its driver electronics. Particular high voltage problems like corona effects and dielectric losses are discussed and countermeasures are presented.

A compact 100 kV high voltage glycol capacitor.

PubMed

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Multivariable polynomial fitting of controlled single-phase nonlinear load of input current total harmonic distortion

NASA Astrophysics Data System (ADS)

Sikora, Roman; Markiewicz, Przemysław; Pabjańczyk, Wiesława

2018-04-01

The power systems usually include a number of nonlinear receivers. Nonlinear receivers are the source of disturbances generated to the power system in the form of higher harmonics. The level of these disturbances describes the total harmonic distortion coefficient THD. Its value depends on many factors. One of them are the deformation and change in RMS value of supply voltage. A modern LED luminaire is a nonlinear receiver as well. The paper presents the results of the analysis of the influence of change in RMS value of supply voltage and the level of dimming of the tested luminaire on the value of the current THD. The analysis was made using a mathematical model based on multivariable polynomial fitting.

Resonant tunneling via a Ru-dye complex using a nanoparticle bridge junction.

PubMed

Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya

2018-06-15

Nonlinear current-voltage (I-V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru-dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I-V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I-V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.

Resonant tunneling via a Ru–dye complex using a nanoparticle bridge junction

NASA Astrophysics Data System (ADS)

Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya

2018-06-01

Nonlinear current–voltage (I–V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru–dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I–V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I–V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.

Mapping Capacitive Coupling Among Pixels in a Sensor Array

NASA Technical Reports Server (NTRS)

Seshadri, Suresh; Cole, David M.; Smith, Roger M.

2010-01-01

An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

Experimental study of a variable-capacitance micromotor with electrostatic suspension

NASA Astrophysics Data System (ADS)

Han, F. T.; Wu, Q. P.; Wang, L.

2010-11-01

A variable-capacitance micromotor where the rotor is supported electrostatically in five degrees of freedom was designed, fabricated and tested in order to study the behavior of this electrostatic motor. The micromachined device is based on a glass/silicon/glass stack bonding structure, fabricated by bulk micromachining and initially operated in atmospheric environment. The analytical torque model is obtained by calculating the capacitances between different stator electrodes and the rotor. Capacitance values in the order of 10-13 pF and torque values in the order of 10-10 N m have been calculated from the motor geometry and attainable drive voltage. A dynamic model of the motor is proposed by further estimating the air-film damping effect in an effort to explain the experimental rotation measurements. Experimental results of starting voltage, continuous operation, switching response and electric bearing of the micromotor are presented and discussed. Preliminary measurements indicate that a rotor rotating speed of 73.3 r min-1 can be achieved at a drive voltage of 28.3 V, equivalent to a theoretical motive torque of 517 pN m. Starting voltage results obtained from experimental measurement are in agreement with the developed dynamic model.

New quantum oscillations in current driven small junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Gefen, Y.

1985-01-01

The response of current-biased Josephson and normal tunnel junctions (JJs and NTJs) such as those fabricated by Voss and Webb (1981) is predicted from a quantum-mechanical description based on the observation that the response of a current-driven open system is equivalent to that of a closed system subject to an external time-dependent voltage bias. Phenomena expected include voltage oscillations with no dc voltage applied, inverse Shapiro steps of dc voltage in the presence of microwave radiation, voltage oscillation in a JJ and an NTJ coupled by a capacitance to a current-biased junction, JJ voltage oscillation frequency = I/e rather than I/2e, and different NTJ resistance than in the voltage-driven case. The effects require approximate experimental parameter values Ic = 15 nA, C = 1 fF, and T much less than 0.4 K for JJs and Ic = a few nA, C = 1 fF, and R = 3 kiloohms for 100-microV inverse Shapiro steps at 10 GHz in NTJs.

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

PubMed Central

Tao, J.; Zhao, C.Z.; Zhao, C.; Taechakumput, P.; Werner, M.; Taylor, S.; Chalker, P. R.

2012-01-01

In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed. PMID:28817021

Simple programmable voltage reference for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

Radial displacement sensor for non-contact bearings

NASA Technical Reports Server (NTRS)

McCormick, John A. (Inventor); Sixsmith, Herbert (Inventor)

1998-01-01

A radial position sensor includes four capacitive electrodes oriented about a shaft, arranged in two diametrically opposite pairs. Sensor circuitry generates an output signal in proportion to the capacitance between the electrodes and the shaft; the capacitance between an electrode and the shaft increases as the shaft approaches the electrode and decreases as the shaft recedes from the electrode. The sensor circuitry applies an alternating voltage to one electrode of a pair and a 180 degree out of phase alternating voltage to the other electrode of the pair. The electrical responses of the two electrodes to their respective input signals are summed to form a radial deviation signal which is relatively free from the alternating voltage and accurately represents the position of the shaft relative to the electrodes of the pair.

Capacitive micromachined ultrasonic transducers (CMUTs) with isolation posts.

PubMed

Huang, Yongli; Zhuang, Xuefeng; Haeggstrom, Edward O; Ergun, A Sanli; Cheng, Ching-Hsiang; Khuri-Yakub, Butrus T

2008-03-01

In this paper, an improved design of a capacitive micromachined ultrasonic transducer (CMUT) is presented. The design improvement aims to address the reliability issues of a CMUT and to extend the device operation beyond the contact (collapse) voltage. The major design novelty is the isolation posts in the vacuum cavities of the CMUT cells instead of full-coverage insulation layers in conventional CMUTs. This eliminates the contact voltage drifting due to charging caused by the insulation layer, and enables repeatable CMUT operation in the post-contact regime. Ultrasonic tests of the CMUTs with isolation posts (PostCMUTs) in air (electrical input impedance and capacitance vs. bias voltage) and immersion (transmission and reception) indicate acoustic performance similar to that obtained from conventional CMUTs while no undesired side effects of this new design is observed.

A Transfer Voltage Simulation Method for Generator Step Up Transformers

NASA Astrophysics Data System (ADS)

Funabashi, Toshihisa; Sugimoto, Toshirou; Ueda, Toshiaki; Ametani, Akihiro

It has been found from measurements for 13 sets of GSU transformers that a transfer voltage of a generator step-up (GSU) transformer involves one dominant oscillation frequency. The frequency can be estimated from the inductance and capacitance values of the GSU transformer low-voltage-side. This observation has led to a new method for simulating a GSU transformer transfer voltage. The method is based on the EMTP TRANSFORMER model, but stray capacitances are added. The leakage inductance and the magnetizing resistance are modified using approximate curves for their frequency characteristics determined from the measured results. The new method is validated in comparison with the measured results.

Capacitance-voltage measurement in memory devices using ferroelectric polymer

NASA Astrophysics Data System (ADS)

Nguyen, Chien A.; Lee, Pooi See

2006-01-01

Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

Self similarities in desalination dynamics and performance using capacitive deionization.

PubMed

Ramachandran, Ashwin; Hemmatifar, Ali; Hawks, Steven A; Stadermann, Michael; Santiago, Juan G

2018-09-01

Charge transfer and mass transport are two underlying mechanisms which are coupled in desalination dynamics using capacitive deionization (CDI). We developed simple reduced-order models based on a mixed reactor volume principle which capture the coupled dynamics of CDI operation using closed-form semi-analytical and analytical solutions. We use the models to identify and explore self-similarities in the dynamics among flow rate, current, and voltage for CDI cell operation including both charging and discharging cycles. The similarity approach identifies the specific combination of cell (e.g. capacitance, resistance) and operational parameters (e.g. flow rate, current) which determine a unique effluent dynamic response. We here demonstrate self-similarity using a conventional flow between CDI (fbCDI) architecture, and we hypothesize that our similarity approach has potential application to a wide range of designs. We performed an experimental study of these dynamics and used well-controlled experiments of CDI cell operation to validate and explore limits of the model. For experiments, we used a CDI cell with five electrode pairs and a standard flow between (electrodes) architecture. Guided by the model, we performed a series of experiments that demonstrate natural response of the CDI system. We also identify cell parameters and operation conditions which lead to self-similar dynamics under a constant current forcing function and perform a series of experiments by varying flowrate, currents, and voltage thresholds to demonstrate self-similarity. Based on this study, we hypothesize that the average differential electric double layer (EDL) efficiency (a measure of ion adsorption rate to EDL charging rate) is mainly dependent on user-defined voltage thresholds, whereas flow efficiency (measure of how well desalinated water is recovered from inside the cell) depends on cell volumes flowed during charging, which is determined by flowrate, current and voltage thresholds. Results of experiments strongly support this hypothesis. Results show that cycle efficiency and salt removal for a given flowrate and current are maximum when average EDL and flow efficiencies are approximately equal. We further explored a range of CC operations with varying flowrates, currents, and voltage thresholds using our similarity variables to highlight trade-offs among salt removal, energy, and throughput performance. Copyright © 2018 Elsevier Ltd. All rights reserved.

An impedance bridge measuring the capacitance ratio in the high frequency range up to 1 MHz

NASA Astrophysics Data System (ADS)

Bee Kim, Dan; Kew Lee, Hyung; Kim, Wan-Seop

2017-02-01

This paper describes a 2-terminal-pair impedance bridge, measuring the capacitance ratio in the high frequency range up to 1 MHz. The bridge was configured with two voltage sources and a phase control unit which enabled the bridge balance by synchronizing the voltage sources with an enhanced phase resolution. Without employing the transformers such as inductive voltage divider, injection and detection transformers, etc, the bridge system is quite simple to set up, and the balance procedure is quick and easy. Using this dual-source coaxial bridge, the 1:1 and 10:1 capacitance ratios were measured with 1 pF-1 nF capacitors in the frequency range from 1 kHz to 1 MHz. The measurement values obtained by the dual-source bridge were then compared with reference values measured using a commercial precision capacitance bridge of AH2700A, the Z-matrix method developed by ourselves, and the 4-terminal-pair coaxial bridge by the Czech Metrological Institute. All the measurements agreed within the reference uncertainty range of an order of 10-6-10-5, proving the bridge ability as a trustworthy tool for measuring the capacitance ratio in the high frequency range.

Intelligence rules of hysteresis in the feedforward trajectory control of piezoelectrically-driven nanostagers

NASA Astrophysics Data System (ADS)

Bashash, Saeid; Jalili, Nader

2007-02-01

Piezoelectrically-driven nanostagers have limited performance in a variety of feedforward and feedback positioning applications because of their nonlinear hysteretic response to input voltage. The hysteresis phenomenon is well known for its complex and multi-path behavior. To realize the underlying physics of this phenomenon and to develop an efficient compensation strategy, the intelligence properties of hysteresis with the effects of non-local memories are discussed here. Through performing a set of experiments on a piezoelectrically-driven nanostager with a high resolution capacitive position sensor, it is shown that for the precise prediction of the hysteresis path, certain memory units are required to store the previous hysteresis trajectory data. Based on the experimental observations, a constitutive memory-based mathematical modeling framework is developed and trained for the precise prediction of the hysteresis path for arbitrarily assigned input profiles. Using the inverse hysteresis model, a feedforward control strategy is then developed and implemented on the nanostager to compensate for the ever-present nonlinearity. Experimental results demonstrate that the controller remarkably eliminates the nonlinear effect, if memory units are sufficiently chosen for the inverse model.

The Effect of Temperature Dependent Material Nonlinearities on the Response of Piezoelectric Composite Plates

NASA Technical Reports Server (NTRS)

Lee, Ho-Jun; Saravanos, Dimitris A.

1997-01-01

Previously developed analytical formulations for piezoelectric composite plates are extended to account for the nonlinear effects of temperature on material properties. The temperature dependence of the composite and piezoelectric properties are represented at the material level through the thermopiezoelectric constitutive equations. In addition to capturing thermal effects from temperature dependent material properties, this formulation also accounts for thermal effects arising from: (1) coefficient of thermal expansion mismatch between the various composite and piezoelectric plies and (2) pyroelectric effects on the piezoelectric material. The constitutive equations are incorporated into a layerwise laminate theory to provide a unified representation of the coupled mechanical, electrical, and thermal behavior of smart structures. Corresponding finite element equations are derived and implemented for a bilinear plate element with the inherent capability to model both the active and sensory response of piezoelectric composite laminates. Numerical studies are conducted on a simply supported composite plate with attached piezoceramic patches under thermal gradients to investigate the nonlinear effects of material property temperature dependence on the displacements, sensory voltages, active voltages required to minimize thermal deflections, and the resultant stress states.

Graphene-Based Linear Tandem Micro-Supercapacitors with Metal-Free Current Collectors and High-Voltage Output.

PubMed

Shi, Xiaoyu; Wu, Zhong-Shuai; Qin, Jieqiong; Zheng, Shuanghao; Wang, Sen; Zhou, Feng; Sun, Chenglin; Bao, Xinhe

2017-11-01

Printable supercapacitors are regarded as a promising class of microscale power source, but are facing challenges derived from conventional sandwich-like geometry. Herein, the printable fabrication of new-type planar graphene-based linear tandem micro-supercapacitors (LTMSs) on diverse substrates with symmetric and asymmetric configuration, high-voltage output, tailored capacitance, and outstanding flexibility is demonstrated. The resulting graphene-based LTMSs consisting of 10 micro-supercapacitors (MSs) present efficient high-voltage output of 8.0 V, suggestive of superior uniformity of the entire integrated device. Meanwhile, LTMSs possess remarkable flexibility without obvious capacitance degradation under different bending states. Moreover, areal capacitance of LTMSs can be sufficiently modulated by incorporating polyaniline-based pseudocapacitive nanosheets into graphene electrodes, showing enhanced capacitance of 7.6 mF cm -2 . To further improve the voltage output and energy density, asymmetric LTMSs are fabricated through controlled printing of linear-patterned graphene as negative electrodes and MnO 2 nanosheets as positive electrodes. Notably, the asymmetric LTMSs from three serially connected MSs are easily extended to 5.4 V, triple voltage output of the single cell (1.8 V), suggestive of the versatile applicability of this technique. Therefore, this work offers numerous opportunities of graphene and analogous nanosheets for one-step scalable fabrication of flexible tandem energy storage devices integrating with printed electronics on same substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rectification of Acetylcholine-Elicited Currents in PC12 Pheochromocytoma Cells

NASA Astrophysics Data System (ADS)

Ifune, C. K.; Steinbach, J. H.

1990-06-01

The current-voltage (I-V) relationship for acetylcholine-elicited currents in the rat pheochromocytoma cell line PC12 is nonlinear. Two voltage-dependent processes that could account for the whole-cell current rectification were examined, receptor channel gating and single receptor channel permeation. We found that both factors are involved in the rectification of the whole-cell currents. The voltage dependence of channel gating determines the shape of the I-V curve at negative potentials. The single-channel I-V relationship is inwardly rectifying and largely responsible for the characteristic shape of the whole-cell I-V curve at positive potentials. The rectification of the single-channel currents is produced by the voltage-dependent block of outward currents by intracellular Mg2+ ions.

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

NASA Technical Reports Server (NTRS)

Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

1990-01-01

Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

Pulse power applications of silicon diodes in EML capacitive pulsers

NASA Astrophysics Data System (ADS)

Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

1993-01-01

Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

Capacitance and conductance-frequency characteristics of In-pSi Schottky barrier diode

NASA Astrophysics Data System (ADS)

Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

2015-06-01

The Schottky barrier height (SBH) values have been calculated by using the reverse bias capacitance-voltage (C-V) characteristics at temperature range of 120-360K. The forward bias capacitance-frequency (C-f) and conductance- frequency (G-f) measurement of In-pSi SBD have been carried out from 0-1.0 V with a step up 0.05 V whereby the energy distribution of the interface state has been determined from the forward bias I-V data taking the bias dependence of the effective barrier height and series resistance (RS) into account. The high value of ideality factor (n=2.12) was attributing to high density of interface states and interfacial oxide layer at metal semiconductor interface. The interface state density (NSS) shows a decrease with bias from bottom of conduction band toward the mid gap. In order to examine frequency dependence NSS, RS, C-V and G(ω)/ω-f measurement of the diode were performed at room temperature in the frequency range of 100Hz-100KHz. Experimental result confirmed that there is an influence in the electrical characteristic of Schottky diode.

New modeling method for the dielectric relaxation of a DRAM cell capacitor

NASA Astrophysics Data System (ADS)

Choi, Sujin; Sun, Wookyung; Shin, Hyungsoon

2018-02-01

This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chinthavali, Madhu Sudhan; Wang, Zhiqiang

This paper presents a detailed parametric sensitivity analysis for a wireless power transfer (WPT) system in electric vehicle application. Specifically, several key parameters for sensitivity analysis of a series-parallel (SP) WPT system are derived first based on analytical modeling approach, which includes the equivalent input impedance, active / reactive power, and DC voltage gain. Based on the derivation, the impact of primary side compensation capacitance, coupling coefficient, transformer leakage inductance, and different load conditions on the DC voltage gain curve and power curve are studied and analyzed. It is shown that the desired power can be achieved by just changingmore » frequency or voltage depending on the design value of coupling coefficient. However, in some cases both have to be modified in order to achieve the required power transfer.« less

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Astrophysics Data System (ADS)

Sarma, Garimella R.; Barranger, John P.

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solution shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects for environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and a typical application are included.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Astrophysics Data System (ADS)

Sarma, G. R.; Barranger, J. P.

1986-05-01

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solutions shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects the environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and typical application are included.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Technical Reports Server (NTRS)

Sarma, Garimella R.; Barranger, John P.

1986-01-01

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solution shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects for environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and a typical application are included.

Ramp-integration technique for capacitance-type blade-tip clearance measurement

NASA Technical Reports Server (NTRS)

Sarma, G. R.; Barranger, J. P.

1986-01-01

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solutions shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects the environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and typical application are included.

Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors.

PubMed

Zhang, Yao; Ma, Rui; Zhen, Xue V; Kudva, Yogish C; Bühlmann, Philippe; Koester, Steven J

2017-11-08

A novel graphene-based variable capacitor (varactor) that senses glucose based on the quantum capacitance effect was successfully developed. The sensor utilizes a metal-oxide-graphene varactor device structure that is inherently compatible with passive wireless sensing, a key advantage for in vivo glucose sensing. The graphene varactors were functionalized with pyrene-1-boronic acid (PBA) by self-assembly driven by π-π interactions. Successful surface functionalization was confirmed by both Raman spectroscopy and capacitance-voltage characterization of the devices. Through glucose binding to the PBA, the glucose concentration in the buffer solutions modulates the level of electrostatic doping of the graphene surface to different degrees, which leads to capacitance changes and Dirac voltage shifts. These responses to the glucose concentration were shown to be reproducible and reversible over multiple measurement cycles, suggesting promise for eventual use in wireless glucose monitoring.

Capacitance changes in frog skin caused by theophylline and antidiuretic hormone.

PubMed

Cuthbert, A W; Painter, E

1969-09-01

1. Impedance loci for frog skins have been calculated by computer analysis from voltage transients developed across the tissues.2. Attention has been paid to simultaneous changes in conductance and capacitance of skins treated either with antidiuretic hormone (ADH) or with theophylline. These drugs always caused an increase in conductance and usually the skin capacitance also increased. However, changes in conductance were not correlated with capacitance changes.3. Changes in capacitance caused by the drugs may represent pore formation in the barrier to water flow, since both drugs increase hydro-osmotic flow in epithelia. If this interpretation is correct, then 0.14% of the membrane area forms water-permeable pores in response to a maximal dose of ADH. This value is somewhat less than the value obtained previously (0.3%) by graphical analysis.4. A theoretical account is given of the relative accuracy of the computer method and the graphical method for voltage transient analysis.

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

PubMed

Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

2015-07-29

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

Performance of Electric Double-Layer Capacitor Simulators

NASA Astrophysics Data System (ADS)

Funabiki, Shigeyuki; Kodama, Shinsuke; Yamamoto, Masayoshi

This paper proposes a simulator of EDLC, which realizes the performance equivalent to electric double-layer capacitors (EDLCs). The proposed simulator consists of an electrolytic capacitor and a two-quadrant chopper working as a current source. Its operation principle is described in the first place. The voltage dependence of capacitance of EDLCs is taken into account. The performance of the proposed EDLC simulator is verified by computer simulations.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

NASA Astrophysics Data System (ADS)

Bykov, Yu. A.; Krastelev, E. G.; Popov, G. V.; Sedin, A. A.; Feduschak, V. F.

2016-12-01

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350-400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted inmore » the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.« less

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

NASA Astrophysics Data System (ADS)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Towards an understanding of induced-charge electrokinetics at large applied voltages in concentrated solutions.

PubMed

Bazant, Martin Z; Kilic, Mustafa Sabri; Storey, Brian D; Ajdari, Armand

2009-11-30

The venerable theory of electrokinetic phenomena rests on the hypothesis of a dilute solution of point-like ions in quasi-equilibrium with a weakly charged surface, whose potential relative to the bulk is of order the thermal voltage (kT/e approximately 25 mV at room temperature). In nonlinear electrokinetic phenomena, such as AC or induced-charge electro-osmosis (ACEO, ICEO) and induced-charge electrophoresis (ICEP), several V approximately 100 kT/e are applied to polarizable surfaces in microscopic geometries, and the resulting electric fields and induced surface charges are large enough to violate the assumptions of the classical theory. In this article, we review the experimental and theoretical literatures, highlight discrepancies between theory and experiment, introduce possible modifications of the theory, and analyze their consequences. We argue that, in response to a large applied voltage, the "compact layer" and "shear plane" effectively advance into the liquid, due to the crowding of counterions. Using simple continuum models, we predict two general trends at large voltages: (i) ionic crowding against a blocking surface expands the diffuse double layer and thus decreases its differential capacitance, and (ii) a charge-induced viscosity increase near the surface reduces the electro-osmotic mobility; each trend is enhanced by dielectric saturation. The first effect is able to predict high-frequency flow reversal in ACEO pumps, while the second may explain the decay of ICEO flow with increasing salt concentration. Through several colloidal examples, such as ICEP of an uncharged metal sphere in an asymmetric electrolyte, we show that nonlinear electrokinetic phenomena are generally ion-specific. Similar theoretical issues arise in nanofluidics (due to confinement) and ionic liquids (due to the lack of solvent), so the paper concludes with a general framework of modified electrokinetic equations for finite-sized ions.

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement betweenmore » experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.« less

Nonlinear electrokinetic phenomena in microfluidic devices

NASA Astrophysics Data System (ADS)

Ben, Yuxing

This thesis addresses nonlinear electrokinetic mechanisms for transporting fluid and particles in microfluidic devices for potential applications in biomedical chips, microelectronic cooling and micro-fuel cells. Nonlinear electrokinetics have many advantages, such as low voltage, low power, high velocity, and no significant gas formation in the electrolyte. However, they involve new and complex charging and flow mechanisms that are still not fully understood or explored. Linear electrokinetic fingering that occurs when a fluid with a lower electrolyte concentration advances into one with a higher concentration is first analyzed. Unlike earlier miscible fingering theories, the linear stability analysis is carried out in the self-similar coordinates of the diffusing front. This new spectral theory is developed for small-amplitude gravity and viscous miscible fingering phenomena in general and applied to electrokinetic miscible fingering specifically. Transient electrokinetic fingering is shown to be insignificant in sub-millimeter micro-devices. Nonlinear electroosmotic flow around an ion-exchange spherical granule is studied next. When an electric field is applied across a conducting and ion-selective porous granule in an electrolyte solution, a polarized surface layer with excess counter-ions is created. The flux-induced polarization produces a nonlinear slip velocity to produce micro-vortices around this sphere. This polarization layer is reduced by convection at high velocity. Two velocity scalings at low and high electric fields are derived and favorably compared with experimental results. A mixing device based on this mechanism is shown to produce mixing efficiency 10-100 times higher than molecular diffusion. Finally, AC nonlinear electrokinetic flow on planar electrodes is studied. Two double layer charging mechanisms are responsible for the flow---one due to capacitive charging of ions from the bulk electrolyte and one due to Faradaic reactions at the electrode that consume or produce ions in the double layer. Faradaic charging is analyzed for specific reactions. From the theory, particular electrokinetic flows above the electrodes are selected for micropumps and bioparticle trapping by specifying the electrode geometry and the applied voltage and frequency.

Dielectric properties of metallic alloy FeCoZr-dielectric ceramic PZT nanostructures prepared by ion sputtering in vacuum conditions

NASA Astrophysics Data System (ADS)

Boiko, O.

2018-05-01

The main objective of the research was investigation of dielectric properties of (FeCoZr)x(PZT)(100-x) granular nanocomposites and determination the influence of isochronous annealing in temperatures of 398 K-573 K on them. The impedance spectroscopy methodology was used. The measurements of electrical parameters, such as: phase shift angle φ, dielectric loss factor tgδ, capacity C and conductivity σ of (FeCoZr)x(PZT)(100-x) nanocomposites have been performed. Frequency dependencies of these parameters were obtained for the ambient temperature range 98 K-373 K for the frequencies ranging from 50 Hz to 105 Hz. It was established, that the conductivity σ of the tested materials before the percolation threshold demonstrates non-linear dependence on frequency. Furthermore, it increases when the ambient temperature is increasing, which indicates a dielectric type of the material. The two types of electrical conduction: capacitive (phase shift angle φ takes negative values) and inductive (φ takes positive values) have been observed. It was concluded that the hopping conductivity dominated in the nanocomposites. Voltage and current resonances phenomena are observed in the materials. The isochronous annealing intensifies the dielectric properties of (FeCoZr)x(PZT)(100-x) nanocomposites.

Photo-induced electronic properties in single quantum well system: effect of excitonic lifetime

NASA Astrophysics Data System (ADS)

Patwari, Jayita; Ghadi, Hemant; Sardar, Samim; Singhal, Jashan; Tongbram, Binita; Shyamal, Sanjib; Bhattacharya, Chinmoy; Chakrabarti, Subhananda; Pal, Samir Kumar

2017-01-01

In the present study, we have established a correlation between the photo-induced electronic phenomena and excited state lifetime of the photo generated carriers in double barrier Al0.3Ga0.7As\\GaAs quantum well (QW) structures. The excited state lifetime was measured experimentally by picosecond time resolved photoluminescence spectroscopy for two samples with different well widths (5.3 nm and 16.5 nm). The faster nonradiative decay time of the narrower well can be attributed to the facile escape of electrons from well to barrier due to lower associated energy compared to that of the thicker well which resembles the simulated results of the energy level distribution. The proposed mechanism of carrier escape is further proven from the higher value of unconventional excitonic capacitance value in the thicker well, measured by impedance spectroscopy. The dependence of photo-induced capacitance on well thickness is explained by the lifetime of the excited carriers in this study. Dependence of the photo-generated capacitance (C) on externally applied bias voltage (V) was also studied to quantitatively establish a proportional relation between the carrier holding capacity of the well and the excitonic lifetime. The higher accumulation of charge and lower ground state energy of the thicker well is evident from the higher tunnelling current found for the same in the photocurrent (I) versus voltage (V) measurement. Thus the escape of electrons from the well to barrier is the key factor affecting the photo generated charge accumulation and its holding capacity which in turn influences the device performances.

Preamplifiers for non-contact capacitive biopotential measurements.

PubMed

Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F

2013-01-01

Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35 um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF--typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF.

An HF coaxial bridge for measuring impedance ratios up to 1 MHz

NASA Astrophysics Data System (ADS)

Kucera, J.; Sedlacek, R.; Bohacek, J.

2012-08-01

A four-terminal pair coaxial ac bridge developed for calibrating both resistance and capacitance ratios and working in the frequency range from 100 kHz up to 1 MHz is described. A reference inductive voltage divider (IVD) makes it possible to calibrate ratios 1:1 and 10:1 with uncertainty of a few parts in 105. The IVD is calibrated by means of a series-parallel capacitance device (SPCD). Use of the same ac bridge with minimal changes for calibrating the SPCD, IVD and unknown impedances simplifies the whole calibration process. The bridge balance conditions are fulfilled with simple capacitance and resistance decades and by injecting voltage supplied from the auxiliary direct digital synthesizer. Bridge performance was checked on the basis of resistance ratio measurements and also capacitance ratio measurements.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

NASA Astrophysics Data System (ADS)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Effectiveness, active energy produced by molecular motors, and nonlinear capacitance of the cochlear outer hair cell.

PubMed

Spector, Alexander A

2005-06-01

Cochlear outer hair cells are crucial for active hearing. These cells have a unique form of motility, named electromotility, whose main features are the cell's length changes, active force production, and nonlinear capacitance. The molecular motor, prestin, that drives outer hair cell electromotility has recently been identified. We reveal relationships between the active energy produced by the outer hair cell molecular motors, motor effectiveness, and the capacitive properties of the cell membrane. We quantitatively characterize these relationships by introducing three characteristics: effective capacitance, zero-strain capacitance, and zero-resultant capacitance. We show that zero-strain capacitance is smaller than zero-resultant capacitance, and that the effective capacitance is between the two. It was also found that the differences between the introduced capacitive characteristics can be expressed in terms of the active energy produced by the cell's molecular motors. The effectiveness of the cell and its molecular motors is introduced as the ratio of the motors'active energy to the energy of the externally applied electric field. It is shown that the effectiveness is proportional to the difference between zero-strain and zero-resultant capacitance. We analyze the cell and motor's effectiveness within a broad range of cellular parameters and estimate it to be within a range of 12%-30%.

Nonlinear system identification of the reduction nickel oxide smelting process in electric arc furnace

NASA Astrophysics Data System (ADS)

Gubin, V.; Firsov, A.

2018-03-01

As the title implies the article describes the nonlinear system identification of the reduction smelting process of nickel oxide in electric arc furnaces. It is suggested that for operational control ratio of components of the charge must be solved the problem of determining the qualitative composition of the melt in real time. The use of 0th harmonic of phase voltage AC furnace as an indirect measure of the melt composition is proposed. Brief description of the mechanism of occurrence and nature of the non-zero 0th harmonic of the AC voltage of the arc is given. It is shown that value of 0th harmonic of the arc voltage is not function of electrical parameters but depends of the material composition of the melt. Processed industrial data are given. Hammerstein-Wiener model is used for description of the dependence of 0th harmonic of the furnace voltage from the technical parameters of melting furnace: the melt composition and current. Recommendations are given about the practical use of the model.

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin

2015-08-03

This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperaturemore » dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.« less

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

NASA Astrophysics Data System (ADS)

Bhowmik, R. N.; Vijayasri, G.

2015-06-01

We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (˜500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

Chaotic behaviors of operational amplifiers.

PubMed

Yim, Geo-Su; Ryu, Jung-Wan; Park, Young-Jai; Rim, Sunghwan; Lee, Soo-Young; Kye, Won-Ho; Kim, Chil-Min

2004-04-01

We investigate nonlinear dynamical behaviors of operational amplifiers. When the output terminal of an operational amplifier is connected to the inverting input terminal, the circuit exhibits period-doubling bifurcation, chaos, and periodic windows, depending on the voltages of the positive and the negative power supplies. We study these nonlinear dynamical characteristics of this electronic circuit experimentally.

Simulation of electron transport across charged grain boundaries

NASA Astrophysics Data System (ADS)

Srikant, V.; Clarke, D. R.; Evans, P. V.

1996-09-01

The I-V (current density-electric field) characteristics of low-angle grain boundaries consisting of periodic arrays of charged dislocations are computed using a quasiclassical molecular dynamics approach. Below a critical value of the grain boundary misorientation, the computed I-V characteristics are linear whereas above they are nonlinear. The degree of nonlinearity and the voltage onset of nonlinearity are found to be dependent on the grain boundary misorientation.

Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes

DTIC Science & Technology

2016-01-05

interlayer tunneling of carriers without the requirement of an external bias or additional doping. The resulting energy gap depends upon the layer...design which involves the interaction of electrons and holes via tunneling through adjacent barriers. By adjusting the Conduction Miniband Valance...design the effective masses can be increased further to reduce the tunneling current, which is a major component of the dark current in MCT detectors

Dioxythiophene-based polymer electrodes for supercapacitor modules.

PubMed

Liu, David Y; Reynolds, John R

2010-12-01

We report on the electrochemical and capacitive behaviors of poly(2,2-dimethyl-3,4-propylene-dioxythipohene) (PProDOT-Me2) films as polymeric electrodes in Type I electrochemical supercapacitors. The supercapacitor device displays robust capacitive charging/discharging behaviors with specific capacitance of 55 F/g, based on 60 μg of PProDOT-Me2 per electrode, that retains over 85% of its storage capacity after 32 000 redox cycles at 78% depth of discharge. Moreover, an appreciable average energy density of 6 Wh/kg has been calculated for the device, along with well-behaved and rapid capacitive responses to 1.0 V between 5 to 500 mV s(-1). Tandem electrochemical supercapacitors were assembled in series, in parallel, and in combinations of the two to widen the operating voltage window and to increase the capacitive currents. Four supercapacitors coupled in series exhibited a 4.0 V charging/discharging window, whereas assembly in parallel displayed a 4-fold increase in capacitance. Combinations of both serial and parallel assembly with six supercapacitors resulted in the extension of voltage to 3 V and a 2-fold increase in capacitive currents. Utilization of bipolar electrodes facilitated the encapsulation of tandem supercapacitors as individual, flexible, and lightweight supercapacitor modules.

Contrasting conduction mechanisms of two internal barrier layer capacitors: (Mn, Nb)-doped SrTiO3 and CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Tsuji, Kosuke; Chen, Wei-Ting; Guo, Hanzheng; Lee, Wen-Hsi; Guillemet-Fritsch, Sophie; Randall, Clive A.

2017-02-01

The d.c. conduction is investigated in the two different types of internal barrier layer capacitors, namely, (Mn, Nb)-doped SrTiO3 (STO) and CaCu3Ti4O12 (CCTO). Scanning electron microscopy (SEM) and Capacitance - Voltage (C-V) analysis are performed to estimate the effective electric field at a grain boundary, EGB. Then, the d.c. conduction mechanism is discussed based on the J (Current density)-EGB characteristics. Three different conduction mechanisms are successively observed with the increase of EGB in both systems. In (Mn, Nb)-doped STO, non-linear J-EGB characteristics is temperature dependent at the intermediate EGB and becomes relatively insensitive to the temperature at the higher EGB. The J- EGB at each regime is explained by the Schottky emission (SE) followed by Fowler-Nordheim (F-N) tunneling. Based on the F-N tunneling, the breakdown voltage is then scaled by the function of the depletion layer thickness and Schottky barrier height at the average grain boundary. The proposed function shows a clear linear relationship with the breakdown. On the other hand, F-N tunneling was not observed in CCTO in our measurement. Ohmic, Poole-Frenkel (P-F), and SE are successively observed in CCTO. The transition point from P-F and SE depends on EGB and temperature. A charge-based deep level transient spectroscopy study reveals that 3 types of trap states exist in CCTO. The trap one with Et ˜ 0.65 eV below the conduction band is found to be responsible for the P-F conduction.

Impact of time-dependent annealing on TiO2 films for CMOS application

NASA Astrophysics Data System (ADS)

Gyanan, Mondal, Sandip; Kumar, Arvind

2017-05-01

Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-κ TiO2 films in MOS. The films are fired at 400°C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of ˜ 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 × 10-6 A/cm2) fired for 80 min at +1 V.

Method and apparatus for measuring low currents in capacitance devices

DOEpatents

Kopp, M.K.; Manning, F.W.; Guerrant, G.C.

1986-06-04

A method and apparatus for measuring subnanoampere currents in capacitance devices is reported. The method is based on a comparison of the voltages developed across the capacitance device with that of a reference capacitor in which the current is adjusted by means of a variable current source to produce a stable voltage difference. The current varying means of the variable current source is calibrated to provide a read out of the measured current. Current gain may be provided by using a reference capacitor which is larger than the device capacitance with a corresponding increase in current supplied through the reference capacitor. The gain is then the ratio of the reference capacitance to the device capacitance. In one illustrated embodiment, the invention makes possible a new type of ionizing radiation dose-rate monitor where dose-rate is measured by discharging a reference capacitor with a variable current source at the same rate that radiation is discharging an ionization chamber. The invention eliminates high-megohm resistors and low current ammeters used in low-current measuring instruments.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Energy breakdown in capacitive deionization.

PubMed

Hemmatifar, Ali; Palko, James W; Stadermann, Michael; Santiago, Juan G

2016-11-01

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages. We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). We show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency. Copyright © 2016 Elsevier Ltd. All rights reserved.

Energy breakdown in capacitive deionization

DOE PAGES

Hemmatifar, Ali; Palko, James W.; Stadermann, Michael; ...

2016-08-12

We explored the energy loss mechanisms in capacitive deionization (CDI). We hypothesize that resistive and parasitic losses are two main sources of energy losses. We measured contribution from each loss mechanism in water desalination with constant current (CC) charge/discharge cycling. Resistive energy loss is expected to dominate in high current charging cases, as it increases approximately linearly with current for fixed charge transfer (resistive power loss scales as square of current and charging time scales as inverse of current). On the other hand, parasitic loss is dominant in low current cases, as the electrodes spend more time at higher voltages.more » We built a CDI cell with five electrode pairs and standard flow between architecture. We performed a series of experiments with various cycling currents and cut-off voltages (voltage at which current is reversed) and studied these energy losses. To this end, we measured series resistance of the cell (contact resistances, resistance of wires, and resistance of solution in spacers) during charging and discharging from voltage response of a small amplitude AC current signal added to the underlying cycling current. We performed a separate set of experiments to quantify parasitic (or leakage) current of the cell versus cell voltage. We then used these data to estimate parasitic losses under the assumption that leakage current is primarily voltage (and not current) dependent. Our results confirmed that resistive and parasitic losses respectively dominate in the limit of high and low currents. We also measured salt adsorption and report energy-normalized adsorbed salt (ENAS, energy loss per ion removed) and average salt adsorption rate (ASAR). As a result, we show a clear tradeoff between ASAR and ENAS and show that balancing these losses leads to optimal energy efficiency.« less

Modeling of matter-wave solitons in a nonlinear inductor-capacitor network through a Gross-Pitaevskii equation with time-dependent linear potential

NASA Astrophysics Data System (ADS)

Kengne, E.; Lakhssassi, A.; Liu, W. M.

2017-08-01

A lossless nonlinear L C transmission network is considered. With the use of the reductive perturbation method in the semidiscrete limit, we show that the dynamics of matter-wave solitons in the network can be modeled by a one-dimensional Gross-Pitaevskii (GP) equation with a time-dependent linear potential in the presence of a chemical potential. An explicit expression for the growth rate of a purely growing modulational instability (MI) is presented and analyzed. We find that the potential parameter of the GP equation of the system does not affect the different regions of the MI. Neglecting the chemical potential in the GP equation, we derive exact analytical solutions which describe the propagation of both bright and dark solitary waves on continuous-wave (cw) backgrounds. Using the found exact analytical solutions of the GP equation, we investigate numerically the transmission of both bright and dark solitary voltage signals in the network. Our numerical studies show that the amplitude of a bright solitary voltage signal and the depth of a dark solitary voltage signal as well as their width, their motion, and their behavior depend on (i) the propagation frequencies, (ii) the potential parameter, and (iii) the amplitude of the cw background. The GP equation derived in this paper with a time-dependent linear potential opens up different ideas that may be of considerable theoretical interest for the management of matter-wave solitons in nonlinear L C transmission networks.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

2017-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor); Cole, David (Inventor); Seshadri, Suresh (Inventor)

2013-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Fabrication and Properties of Multilayer Structures

DTIC Science & Technology

1982-08-01

22- The relative voltage supported in each semiconductor is V -V NAc b 1 A227) Vb2 V2 NDlcl where V = V1 + V2. It is apparent that Eqs. 5-7 will...has more difficulty because the interface state capacitance must be extracted from the measured capacitance. When a voltage is applied, the interface...contain identical information about interface states. However, as Nicollian and Goetzberger (6 ) have shown, greater inaccuracies arise in extracting

High temperature 1 MHz capacitance-voltage method for evaluation of border traps in 4H-SiC MOS system

NASA Astrophysics Data System (ADS)

Peng, Zhao-Yang; Wang, Sheng-Kai; Bai, Yun; Tang, Yi-Dan; Chen, Xi-Ming; Li, Cheng-Zhan; Liu, Ke-An; Liu, Xin-Yu

2018-04-01

In this work, border traps located in SiO2 at different depths in 4H-SiC MOS system are evaluated by a simple and effective method based on capacitance-voltage (C-V) measurements. This method estimates the border traps between two adjacent depths through C-V measurement at various frequencies at room and elevated temperatures. By comparison of these two C-V characteristics, the correlation between time constant of border traps and temperatures is obtained. Then the border trap density is determined by integration of capacitance difference against gate voltage at the regions where border traps dominate. The results reveal that border trap concentration a few nanometers away from the interface increases exponentially towards the interface, which is in good agreement with previous work. It has been proved that high temperature 1 MHz C-V method is effective for border trap evaluation.

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

NASA Astrophysics Data System (ADS)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

PubMed

Izhnin, Ihor I; Nesmelov, Sergey N; Dzyadukh, Stanislav M; Voitsekhovskii, Alexander V; Gorn, Dmitry I; Dvoretsky, Sergey A; Mikhailov, Nikolaj N

2016-12-01

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 - x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with thickness of 5.6 nm in the sub-surface layer of the semiconductor. Both the conductance-voltage and capacitance-voltage characteristics show strong oscillations when the metal-insulator-semiconductor (MIS) structure with a single quantum well based on HgTe is biased into the strong inversion mode. Also, oscillations on the voltage dependencies of differential resistance of the space charge region were observed. These oscillations were related to the recharging of quantum levels in HgTe.

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

NASA Astrophysics Data System (ADS)

Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

2013-11-01

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

Preamplifiers for non-contact capacitive biopotential measurements*

PubMed Central

Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F.

2014-01-01

Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF - typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF. PMID:24109979

Carbon Nanotube Tape Vibrating Gyroscope

NASA Technical Reports Server (NTRS)

Tucker, Dennis Stephen (Inventor)

2016-01-01

A vibrating gyroscope includes a piezoelectric strip having length and width dimensions. The piezoelectric strip includes a piezoelectric material and carbon nanotubes (CNTs) substantially aligned and polled along the strip's length dimension. A spindle having an axis of rotation is coupled to the piezoelectric strip. The axis of rotation is parallel to the strip's width dimension. A first capacitance sensor is mechanically coupled to the spindle for rotation therewith. The first capacitance sensor is positioned at one of the strip's opposing ends and is spaced apart from one of the strip's opposing faces. A second capacitance sensor is mechanically coupled to the spindle for rotation therewith. The second capacitance sensor is positioned at another of the strip's opposing ends and is spaced apart from another of the strip's opposing faces. A voltage source applies an AC voltage to the piezoelectric strip.

Exponential model normalization for electrical capacitance tomography with external electrodes under gap permittivity conditions

NASA Astrophysics Data System (ADS)

Baidillah, Marlin R.; Takei, Masahiro

2017-06-01

A nonlinear normalization model which is called exponential model for electrical capacitance tomography (ECT) with external electrodes under gap permittivity conditions has been developed. The exponential model normalization is proposed based on the inherently nonlinear relationship characteristic between the mixture permittivity and the measured capacitance due to the gap permittivity of inner wall. The parameters of exponential equation are derived by using an exponential fitting curve based on the simulation and a scaling function is added to adjust the experiment system condition. The exponential model normalization was applied to two dimensional low and high contrast dielectric distribution phantoms by using simulation and experimental studies. The proposed normalization model has been compared with other normalization models i.e. Parallel, Series, Maxwell and Böttcher models. Based on the comparison of image reconstruction results, the exponential model is reliable to predict the nonlinear normalization of measured capacitance in term of low and high contrast dielectric distribution.

Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode

NASA Astrophysics Data System (ADS)

Peta, Koteswara Rao; Kim, Moon Deock

2018-01-01

The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K-420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20-0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.

The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Türüt, Abdulmecit; Karataş, Şükrü

2018-04-01

In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (ε‧), dielectric loss (ε″), dielectric loss tangent (tanδ) and ac electrical conductivities (σac) have been calculated as a function of temperature. These values of the ε‧, ε″, tanδ and σac have been found to be 2.272, 5.981, 2.631 and 3.32 × 10-6 (Ω-1cm-1) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 × 10-6 (Ω-1cm-1), respectively at 320 K. These decrease of the dielectric parameters (ε‧, ε″, tanδ and σac) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent.

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Modulating capacitive response of MoS2 flake by controlled nanostructuring through focused laser irradiation.

PubMed

Rani, Renu; Kundu, Anirban; Balal, Mohammad; Sheet, Goutam; Hazra, Kiran Shankar

2018-08-24

Unlike graphene nanostructures, various physical properties of nanostructured MoS 2 have remained unexplored due to the lack of established fabrication routes. Herein, we have reported unique electrostatic properties of MoS 2 nanostructures, fabricated in a controlled manner of different geometries on 2D flake by using focused laser irradiation technique. Electrostatic force microscopy has been carried out on MoS 2 nanostructures by varying tip bias voltage and lift height. The analysis depicts no contrast flip in phase image of the patterned nanostructure due to the absence of free surface charges. However, prominent change in phase shift at the patterned area is observed. Such contrast changes signify the capacitive interaction between tip and nanostructures at varying tip bias voltage and lift height, irrespective of their shape and size. Such unperturbed capacitive behavior of the MoS 2 nanostructures offer modulation of capacitance in periodic array on 2D MoS 2 flake for potential application in capacitive devices.

Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Altuhov, V. I., E-mail: altukhovv@mail.ru; Kasyanenko, I. S.; Sankin, A. V.

2016-09-15

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Time varying voltage combustion control and diagnostics sensor

DOEpatents

Chorpening, Benjamin T [Morgantown, WV; Thornton, Jimmy D [Morgantown, WV; Huckaby, E David [Morgantown, WV; Fincham, William [Fairmont, WV

2011-04-19

A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

Study of the photovoltaic effect in thin film barium titanate

NASA Technical Reports Server (NTRS)

Grannemann, W. W.; Dharmadhikari, V. S.

1982-01-01

Ferroelectric films of barium titanate were synthesized on silicon and quartz substrates, and the photoelectric effect in the structure consisting of metal deposited ferroelectric barium titanate film silicon was studied. A photovoltage with polarity that depends on the direction of the remanent polarization was observed. The deposition of BaTiO3 on silicon and fused quartz substrates was accomplished by an rf sputtering technique. A series of experiments to study the growth of ferroelectric BaTiO3 films on single crystal silicon and fused quartz substrates were conducted. The ferroelectric character in these films was found on the basis of evidence from the polarization electric field hysteresis loops, capacitance voltage and capacitance temperature techniques and from X-ray diffraction studies.

MEMS based hair flow-sensors as model systems for acoustic perception studies

NASA Astrophysics Data System (ADS)

Krijnen, Gijs J. M.; Dijkstra, Marcel; van Baar, John J.; Shankar, Siripurapu S.; Kuipers, Winfred J.; de Boer, Rik J. H.; Altpeter, Dominique; Lammerink, Theo S. J.; Wiegerink, Remco

2006-02-01

Arrays of MEMS fabricated flow sensors inspired by the acoustic flow-sensitive hairs found on the cerci of crickets have been designed, fabricated and characterized. The hairs consist of up to 1 mm long SU-8 structures mounted on suspended membranes with normal translational and rotational degrees of freedom. Electrodes on the membrane and on the substrate form variable capacitors, allowing for capacitive read-out. Capacitance versus voltage, frequency dependence and directional sensitivity measurements have been successfully carried out on fabricated sensor arrays, showing the viability of the concept. The sensors form a model system allowing for investigations on sensory acoustics by their arrayed nature, their adaptivity via electrostatic interaction (frequency tuning and parametric amplification) and their susceptibility to noise (stochastic resonance).

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostokov, N. V., E-mail: vostokov@ipm.sci-nnov.ru; Shashkin, V. I.

2015-11-28

We consider the problem of non-resonant detection of terahertz signals in a short gate length field-effect transistor having a two-dimensional electron channel with zero external bias between the source and the drain. The channel resistance, gate-channel capacitance, and quadratic nonlinearity parameter of the transistor during detection as a function of the gate bias voltage are studied. Characteristics of detection of the transistor connected in an antenna with real impedance are analyzed. The consideration is based on both a simple one-dimensional model of the transistor and allowance for the two-dimensional distribution of the electric field in the transistor structure. The resultsmore » given by the different models are discussed.« less

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface.

PubMed

Yu, Zhanghao; Yang, Xi; Chung, SungWon

2018-01-29

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal-oxide-semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900- μ m 2 chip area and achieves 0.022-2.78-MHz unity gain bandwidth and over 65 ∘ phase margin with a load capacitance of 0.1-15 nF. The prototype amplifier consumes 7.6 μ W from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption.

Effect of gas properties on the dynamics of the electrical slope asymmetry effect in capacitive plasmas: comparison of Ar, H 2 and CF 4

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruneau, Bastien; Lafleur, T.; Gans, T.

2015-12-01

Tailored voltage excitation waveforms provide an efficient control of the ion energy (through the electrical asymmetry effect) in capacitive plasmas by varying the 'amplitude' asymmetry of the waveform. In this work, the effect of a 'slope' asymmetry of the waveform is investigated by using sawtooth-like waveforms, through which the sheath dynamic can be manipulated. A remarkably different discharge dynamic is found for Ar, H 2, and CF 4 gases, which is explained by the different dominant electron heating mechanisms and plasma chemistries. In comparison to Argon we find that the electrical asymmetry can even be reversed by using an electronegativemore » gas such as CF 4. Phase resolved optical emission spectroscopy measurements, probing the spatiotemporal distribution of the excitation rate show excellent agreement with the results of particle-in-cell simulations, confirming the high degree of correlation between the excitation rates with the dominant heating mechanisms in the various gases. It is shown that, depending on the gas used, sawtooth-like voltage waveforms may cause a strong asymmetry.« less

An evaluation method of the profile of plasma-induced defects based on capacitance-voltage measurement

NASA Astrophysics Data System (ADS)

Okada, Yukimasa; Ono, Kouichi; Eriguchi, Koji

2017-06-01

Aggressive shrinkage and geometrical transition to three-dimensional structures in metal-oxide-semiconductor field-effect transistors (MOSFETs) lead to potentially serious problems regarding plasma processing such as plasma-induced physical damage (PPD). For the precise control of material processing and future device designs, it is extremely important to clarify the depth and energy profiles of PPD. Conventional methods to estimate the PPD profile (e.g., wet etching) are time-consuming. In this study, we propose an advanced method using a simple capacitance-voltage (C-V) measurement. The method first assumes the depth and energy profiles of defects in Si substrates, and then optimizes the C-V curves. We applied this methodology to evaluate the defect generation in (100), (111), and (110) Si substrates. No orientation dependence was found regarding the surface-oxide layers, whereas a large number of defects was assigned in the case of (110). The damaged layer thickness and areal density were estimated. This method provides the highly sensitive PPD prediction indispensable for designing future low-damage plasma processes.

Interfacial Ordering and Accompanying Divergent Capacitance at Ionic Liquid-Metal Interfaces.

PubMed

Limmer, David T

2015-12-18

A theory is constructed for dense ionic solutions near charged planar walls that is valid for strong interionic correlations. This theory predicts a fluctuation-induced, first-order transition and spontaneous charge density ordering at the interface, in the presence of an otherwise disordered bulk solution. The surface ordering is driven by applied voltage and results in an anomalous differential capacitance, in agreement with recent simulation results and consistent with experimental observations of a wide array of systems. Explicit forms for the charge density profile and capacitance are given. The theory is compared with numerical results for the charge frustrated Ising model, which is also found to exhibit a voltage driven first-order transition.

Interfacial Ordering and Accompanying Divergent Capacitance at Ionic Liquid-Metal Interfaces

NASA Astrophysics Data System (ADS)

Limmer, David T.

2015-12-01

A theory is constructed for dense ionic solutions near charged planar walls that is valid for strong interionic correlations. This theory predicts a fluctuation-induced, first-order transition and spontaneous charge density ordering at the interface, in the presence of an otherwise disordered bulk solution. The surface ordering is driven by applied voltage and results in an anomalous differential capacitance, in agreement with recent simulation results and consistent with experimental observations of a wide array of systems. Explicit forms for the charge density profile and capacitance are given. The theory is compared with numerical results for the charge frustrated Ising model, which is also found to exhibit a voltage driven first-order transition.

InGaAs-based planar barrier diode as microwave rectifier

NASA Astrophysics Data System (ADS)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

NASA Astrophysics Data System (ADS)

Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

2017-09-01

We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F <1 ), as has been established previously [Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bean, Bruce Palmer

The effects of ether and halothane on membrane currents in the voltage clamped crayfish giant axon membrane were investigated. Concentrations of ether up to 300 mM and of halothane up to 32 mM had no effect on resting potential or leakage conductance. Ether and halothane reduced the size of sodium currents without changing the voltage dependence of the peak currents or their reversal potential. Ether and halothane also produced a reversible, dose-dependent speeding of sodium current decay at all membrane potentials. Ether reduced the time constants for inactivation, and also shifted the midpoint of the steady-state inactivation curve in themore » hyperpolarizing direction. Potassium currents were smaller with ether present, with no change in the voltage dependence of steady-state currents. The activation of potassium channels was faster with ether present. There was no apparent change in the capacitance of the crayfish giant axon membrane with ether concentrations of up to 100 mM. Experiments on sodium channel inactivation kinetics were performed using 4-aminopyridine to block potassium currents. Sodium currents decayed with a time course generally fit well by a single exponential. The time constant of decay was a steep function of voltage, especially in the negative resistance region of the peak current vs voltage relation.The time course of inactivation was very similar to that of the decay of the current at the same potential. The measurement of steady-state inactivation curves with different test pulses showed no shifts along the voltage asix. The voltage-dependence of the integral of sodium conductance was measured to test models of sodium channel inactivation in which channels must open before inactivating; the results appear inconsistent with some of the simplest cases of such models.« less

Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles

NASA Astrophysics Data System (ADS)

Oh, Sewook; Kim, Minkeun; Kim, Yejin; Jung, Hunsang; Yoon, Tae-Sik; Choi, Young-Jin; Jung Kang, Chi; Moon, Myeong-Ju; Jeong, Yong-Yeon; Park, In-Kyu; Ho Lee, Hyun

2013-08-01

An organic memory structure using monolayered aptamer conjugated gold nanoparticles (Au NPs) as charge storage nodes was demonstrated. Metal-pentacene-insulator-semiconductor device was adopted for the non-volatile memory effect through self assembly monolayer of A10-aptamer conjugated Au NPs, which was formed on functionalized insulator surface with prostate-specific membrane antigen protein. The capacitance versus voltage (C-V) curves obtained for the monolayered Au NPs capacitor exhibited substantial flat-band voltage shift (ΔVFB) or memory window of 3.76 V under (+/-)7 V voltage sweep. The memory device format can be potentially expanded to a highly specific capacitive sensor for the aptamer-specific biomolecule detection.

PGE(2) activation of apical membrane Cl(-) channels in A6 epithelia: impedance analysis.

PubMed Central

Păunescu, T G; Helman, S I

2001-01-01

Measurements of transepithelial electrical impedance of continuously short-circuited A6 epithelia were made at audio frequencies (0.244 Hz to 10.45 kHz) to investigate the time course and extent to which prostaglandin E(2) (PGE(2)) modulates Cl(-) transport and apical membrane capacitance in this cell-cultured model epithelium. Apical and basolateral membrane resistances were determined by nonlinear curve-fitting of the impedance vectors at relatively low frequencies (<50 Hz) to equations (Păunescu, T. G., and S. I. Helman. 2001. Biophys. J. 81:838--851) where depressed Nyquist impedance semicircles were characteristic of the membrane impedances under control Na(+)-transporting and amiloride-inhibited conditions. In all tissues (control, amiloride-blocked, and amiloride-blocked and furosemide-pretreated), PGE(2) caused relatively small (< approximately 3 microA/cm(2)) and rapid (<60 s) maximal increase of chloride current due to activation of a rather large increase of apical membrane conductance that preceded significant activation of Na(+) transport through amiloride-sensitive epithelial Na(+) channels (ENaCs). Apical membrane capacitance was frequency-dependent with a Cole-Cole dielectric dispersion whose relaxation frequency was near 150 Hz. Analysis of the time-dependent changes of the complex frequency-dependent equivalent capacitance of the cells at frequencies >1.5 kHz revealed that the mean 9.8% increase of capacitance caused by PGE(2) was not correlated in time with activation of chloride conductance, but rather correlated with activation of apical membrane Na(+) transport. PMID:11463630

Acetylproteomic Analysis Reveals Functional Implications of Lysine Acetylation in Human Spermatozoa (sperm)*

PubMed Central

Yu, Heguo; Diao, Hua; Wang, Chunmei; Lin, Yan; Yu, Fudong; Lu, Hui; Xu, Wei; Li, Zheng; Shi, Huijuan; Zhao, Shimin; Zhou, Yuchuan; Zhang, Yonglian

2015-01-01

Male infertility is a medical condition that has been on the rise globally. Lysine acetylation of human sperm, an essential posttranslational modification involved in the etiology of sperm abnormality, is not fully understood. Therefore, we first generated a qualified pan-anti-acetyllysine monoclonal antibody to characterize the global lysine acetylation of uncapacitated normal human sperm with a proteomics approach. With high enrichment ratios that were up to 31%, 973 lysine-acetylated sites that matched to 456 human sperm proteins, including 671 novel lysine acetylation sites and 205 novel lysine-acetylated proteins, were identified. These proteins exhibited conserved motifs XXXKYXXX, XXXKFXXX, and XXXKHXXX, were annotated to function in multiple metabolic processes, and were localized predominantly in the mitochondrion and cytoplasmic fractions. Between the uncapacitated and capacitated sperm, different acetylation profiles in regard to functional proteins involved in sperm capacitation, sperm-egg recognition, sperm-egg plasma fusion, and fertilization were observed, indicating that acetylation of functional proteins may be required during sperm capacitation. Bioinformatics analysis revealed association of acetylated proteins with diseases and drugs. Novel acetylation of voltage-dependent anion channel proteins was also found. With clinical sperm samples, we observed differed lysine acetyltransferases and lysine deacetylases expression between normal sperm and abnormal sperm of asthenospermia or necrospermia. Furthermore, with sperm samples impaired by epigallocatechin gallate to mimic asthenospermia, we observed that inhibition of sperm motility was partly through the blockade of voltage-dependent anion channel 2 Lys-74 acetylation combined with reduced ATP levels and mitochondrial membrane potential. Taken together, we obtained a qualified pan-anti-acetyllysine monoclonal antibody, analyzed the acetylproteome of uncapacitated human sperm, and revealed associations between functional protein acetylation and sperm functions. PMID:25680958

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

Traps in AlGaN /GaN/SiC heterostructures studied by deep level transient spectroscopy

NASA Astrophysics Data System (ADS)

Fang, Z.-Q.; Look, D. C.; Kim, D. H.; Adesida, I.

2005-10-01

AlGaN /GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10-12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhowmik, R. N., E-mail: rnbhowmik.phy@pondiuni.edu.in; Vijayasri, G.

2015-06-15

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling.more » The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.« less

"Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

NASA Astrophysics Data System (ADS)

Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

2018-03-01

In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

Critical phenomena at a first-order phase transition in a lattice of glow lamps: Experimental findings and analogy to neural activity

NASA Astrophysics Data System (ADS)

Minati, Ludovico; de Candia, Antonio; Scarpetta, Silvia

2016-07-01

Networks of non-linear electronic oscillators have shown potential as physical models of neural dynamics. However, two properties of brain activity, namely, criticality and metastability, remain under-investigated with this approach. Here, we present a simple circuit that exhibits both phenomena. The apparatus consists of a two-dimensional square lattice of capacitively coupled glow (neon) lamps. The dynamics of lamp breakdown (flash) events are controlled by a DC voltage globally connected to all nodes via fixed resistors. Depending on this parameter, two phases having distinct event rate and degree of spatiotemporal order are observed. The transition between them is hysteretic, thus a first-order one, and it is possible to enter a metastability region, wherein, approaching a spinodal point, critical phenomena emerge. Avalanches of events occur according to power-law distributions having exponents ≈3/2 for size and ≈2 for duration, and fractal structure is evident as power-law scaling of the Fano factor. These critical exponents overlap observations in biological neural networks; hence, this circuit may have value as building block to realize corresponding physical models.

Critical phenomena at a first-order phase transition in a lattice of glow lamps: Experimental findings and analogy to neural activity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minati, Ludovico, E-mail: lminati@ieee.org, E-mail: ludovico.minati@unitn.it, E-mail: ludovico.minati@ifj.edu; Complex Systems Theory Department, Institute of Nuclear Physics, Polish Academy of Sciences, Kraków; Candia, Antonio de

2016-07-15

Networks of non-linear electronic oscillators have shown potential as physical models of neural dynamics. However, two properties of brain activity, namely, criticality and metastability, remain under-investigated with this approach. Here, we present a simple circuit that exhibits both phenomena. The apparatus consists of a two-dimensional square lattice of capacitively coupled glow (neon) lamps. The dynamics of lamp breakdown (flash) events are controlled by a DC voltage globally connected to all nodes via fixed resistors. Depending on this parameter, two phases having distinct event rate and degree of spatiotemporal order are observed. The transition between them is hysteretic, thus a first-ordermore » one, and it is possible to enter a metastability region, wherein, approaching a spinodal point, critical phenomena emerge. Avalanches of events occur according to power-law distributions having exponents ≈3/2 for size and ≈2 for duration, and fractal structure is evident as power-law scaling of the Fano factor. These critical exponents overlap observations in biological neural networks; hence, this circuit may have value as building block to realize corresponding physical models.« less

Isolating the effect of pore size distribution on electrochemical double-layer capacitance using activated fluid coke

NASA Astrophysics Data System (ADS)

Zuliani, Jocelyn E.; Tong, Shitang; Kirk, Donald W.; Jia, Charles Q.

2015-12-01

Electrochemical double-layer capacitors (EDLCs) use physical ion adsorption in the capacitive electrical double layer of high specific surface area (SSA) materials to store electrical energy. Previous work shows that the SSA-normalized capacitance increases when pore diameters are less than 1 nm. However, there still remains uncertainty about the charge storage mechanism since the enhanced SSA-normalized capacitance is not observed in all microporous materials. In previous studies, the total specific surface area and the chemical composition of the electrode materials were not controlled. The current work is the first reported study that systematically compares the performance of activated carbon prepared from the same raw material, with similar chemical composition and specific surface area, but different pore size distributions. Preparing samples with similar SSAs, but different pores sizes is not straightforward since increasing pore diameters results in decreasing the SSA. This study observes that the microporous activated carbon has a higher SSA-normalized capacitance, 14.1 μF cm-2, compared to the mesoporous material, 12.4 μF cm-2. However, this enhanced SSA-normalized capacitance is only observed above a threshold operating voltage. Therefore, it can be concluded that a minimum applied voltage is required to induce ion adsorption in these sub-nanometer micropores, which increases the capacitance.

Apparatus for producing voltage and current pulses

DOEpatents

Kirbie, Hugh; Dale, Gregory E.

2010-12-21

An apparatus having one or more modular stages for producing voltage and current pulses. Each module includes a diode charging means to charge a capacitive means that stores energy. One or more charging impedance means are connected to the diode charging means to provide a return current pathway. A solid-state switch discharge means, with current interruption capability, is connected to the capacitive means to discharge stored energy. Finally, a control means is provided to command the switching action of the solid-state switch discharge means.

Simulation of Dual-Electrode Capacitively Coupled Plasma Discharges

NASA Astrophysics Data System (ADS)

Lu, Yijia; Ji, Linhong; Cheng, Jia

2016-12-01

Dual-electrode capacitively coupled plasma discharges are investigated here to lower the non-uniformity of plasma density. The dual-electrode structure proposed by Jung splits the electrode region and increases the flexibility of fine tuning non-uniformity. Different RF voltages, frequencies, phase-shifts and electrode areas are simulated and the influences are discussed. RF voltage and electrode area have a non-monotonic effect on non-uniformity, while frequency has a monotonic effect. Phase-shift has a cyclical influence on non-uniformity. A special combination of 224 V voltage and 11% area ratio with 10 MHz lowers the non-uniformity of the original set (200 V voltage and 0% area ratio with 10 MHz) by 46.5%. The position of the plasma density peak at the probe line has been tracked and properly tuning the phase-shift can obtain the same trace as tuning frequency or voltage. supported by National Natural Science Foundation of China (No. 51405261)

Multi-tunable microelectromechanical system (MEMS) resonators

DOEpatents

Stalford, Harold L [Norman, OK; Butler, Michael A [Andover, MA; Schubert, W Kent [Albuquerque, NM

2006-08-22

A method for tuning a vibratory device including a cantilevered resonator comprising the steps of increasing a voltage V.sub.0 supplied to the vibratory device to thereby increase the bandwidth of the vibratory device; and keeping the resonant frequency of the vibratory device at substantially that natural frequency of the cantilevered resonator, wherein the vibratory device comprises: a capacitor including a movable plate and a fixed plate spaced from each other, the movable plate being part of the cantilevered resonator; a voltage source connected to the capacitor for providing voltage V.sub.0 across the capacitor to produce an attractive force between movable plate and fixed plate; a circuit connecting the voltage source to the capacitor; and a load resistor in said circuit having a resistance R.sub.L satisfying the following equation: .mu..omega..times..times..lamda. ##EQU00001## where: .mu. is at least 10; .omega..sub.0 is the beam constant for the cantilevered resonator; c.sub.0 is the capacitance for the capacitor; and .lamda. is the voltage dependent coupling parameter for voltage V.sub.0.

Influence of nonelectrostatic ion-ion interactions on double-layer capacitance

NASA Astrophysics Data System (ADS)

Zhao, Hui

2012-11-01

Recently a Poisson-Helmholtz-Boltzmann (PHB) model [Bohinc , Phys. Rev. EPLEEE81539-375510.1103/PhysRevE.85.031130 85, 031130 (2012)] was developed by accounting for solvent-mediated nonelectrostatic ion-ion interactions. Nonelectrostatic interactions are described by a Yukawa-like pair potential. In the present work, we modify the PHB model by adding steric effects (finite ion size) into the free energy to derive governing equations. The modified PHB model is capable of capturing both ion specificity and ion crowding. This modified model is then employed to study the capacitance of the double layer. More specifically, we focus on the influence of nonelectrostatic ion-ion interactions on charging a double layer near a flat surface in the presence of steric effects. We numerically compute the differential capacitance as a function of the voltage under various conditions. At small voltages and low salt concentrations (dilute solution), we find out that the predictions from the modified PHB model are the same as those from the classical Poisson-Boltzmann theory, indicating that nonelectrostatic ion-ion interactions and steric effects are negligible. At moderate voltages, nonelectrostatic ion-ion interactions play an important role in determining the differential capacitance. Generally speaking, nonelectrostatic interactions decrease the capacitance because of additional nonelectrostatic repulsion among excess counterions inside the double layer. However, increasing the voltage gradually favors steric effects, which induce a condensed layer with crowding of counterions near the electrode. Accordingly, the predictions from the modified PHB model collapse onto those computed by the modified Poisson-Boltzmann theory considering steric effects alone. Finally, theoretical predictions are compared and favorably agree with experimental data, in particular, in concentrated solutions, leading one to conclude that the modified PHB model adequately predicts the diffuse-charge dynamics of the double layer with ion specificity and steric effects.

Capacitor-Chain Successive-Approximation ADC

NASA Technical Reports Server (NTRS)

Cunningham, Thomas

2003-01-01

A proposed successive-approximation analog-to-digital converter (ADC) would contain a capacitively terminated chain of identical capacitor cells. Like a conventional successive-approximation ADC containing a bank of binary-scaled capacitors, the proposed ADC would store an input voltage on a sample-and-hold capacitor and would digitize the stored input voltage by finding the closest match between this voltage and a capacitively generated sum of binary fractions of a reference voltage (Vref). However, the proposed capacitor-chain ADC would offer two major advantages over a conventional binary-scaled-capacitor ADC: (1) In a conventional ADC that digitizes to n bits, the largest capacitor (representing the most significant bit) must have 2(exp n-1) times as much capacitance, and hence, approximately 2(exp n-1) times as much area as does the smallest capacitor (representing the least significant bit), so that the total capacitor area must be 2(exp n) times that of the smallest capacitor. In the proposed capacitor-chain ADC, there would be three capacitors per cell, each approximately equal to the smallest capacitor in the conventional ADC, and there would be one cell per bit. Therefore, the total capacitor area would be only about 3(exp n) times that of the smallest capacitor. The net result would be that the proposed ADC could be considerably smaller than the conventional ADC. (2) Because of edge effects, parasitic capacitances, and manufacturing tolerances, it is difficult to make capacitor banks in which the values of capacitance are scaled by powers of 2 to the required precision. In contrast, because all the capacitors in the proposed ADC would be identical, the problem of precise binary scaling would not arise.

Low temperature co-fired ceramic packaging of CMOS capacitive sensor chip towards cell viability monitoring.

PubMed

Halonen, Niina; Kilpijärvi, Joni; Sobocinski, Maciej; Datta-Chaudhuri, Timir; Hassinen, Antti; Prakash, Someshekar B; Möller, Peter; Abshire, Pamela; Kellokumpu, Sakari; Lloyd Spetz, Anita

2016-01-01

Cell viability monitoring is an important part of biosafety evaluation for the detection of toxic effects on cells caused by nanomaterials, preferably by label-free, noninvasive, fast, and cost effective methods. These requirements can be met by monitoring cell viability with a capacitance-sensing integrated circuit (IC) microchip. The capacitance provides a measurement of the surface attachment of adherent cells as an indication of their health status. However, the moist, warm, and corrosive biological environment requires reliable packaging of the sensor chip. In this work, a second generation of low temperature co-fired ceramic (LTCC) technology was combined with flip-chip bonding to provide a durable package compatible with cell culture. The LTCC-packaged sensor chip was integrated with a printed circuit board, data acquisition device, and measurement-controlling software. The packaged sensor chip functioned well in the presence of cell medium and cells, with output voltages depending on the medium above the capacitors. Moreover, the manufacturing of microfluidic channels in the LTCC package was demonstrated.

Anomalous or regular capacitance? The influence of pore size dispersity on double-layer formation

NASA Astrophysics Data System (ADS)

Jäckel, N.; Rodner, M.; Schreiber, A.; Jeongwook, J.; Zeiger, M.; Aslan, M.; Weingarth, D.; Presser, V.

2016-09-01

The energy storage mechanism of electric double-layer capacitors is governed by ion electrosorption at the electrode surface. This process requires high surface area electrodes, typically highly porous carbons. In common organic electrolytes, bare ion sizes are below one nanometer but they are larger when we consider their solvation shell. In contrast, ionic liquid electrolytes are free of solvent molecules, but cation-anion coordination requires special consideration. By matching pore size and ion size, two seemingly conflicting views have emerged: either an increase in specific capacitance with smaller pore size or a constant capacitance contribution of all micro- and mesopores. In our work, we revisit this issue by using a comprehensive set of electrochemical data and a pore size incremental analysis to identify the influence of certain ranges in the pore size distribution to the ion electrosorption capacity. We see a difference in solvation of ions in organic electrolytes depending on the applied voltage and a cation-anion interaction of ionic liquids in nanometer sized pores.

Non-mean-field theory of anomalously large double layer capacitance

NASA Astrophysics Data System (ADS)

Loth, M. S.; Skinner, Brian; Shklovskii, B. I.

2010-07-01

Mean-field theories claim that the capacitance of the double layer formed at a metal/ionic conductor interface cannot be larger than that of the Helmholtz capacitor, whose width is equal to the radius of an ion. However, in some experiments the apparent width of the double layer capacitor is substantially smaller. We propose an alternate non-mean-field theory of the ionic double layer to explain such large capacitance values. Our theory allows for the binding of discrete ions to their image charges in the metal, which results in the formation of interface dipoles. We focus primarily on the case where only small cations are mobile and other ions form an oppositely charged background. In this case, at small temperature and zero applied voltage dipoles form a correlated liquid on both contacts. We show that at small voltages the capacitance of the double layer is determined by the transfer of dipoles from one electrode to the other and is therefore limited only by the weak dipole-dipole repulsion between bound ions so that the capacitance is very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the much smaller mean-field value, as seen in experimental data. We test our analytical predictions with a Monte Carlo simulation and find good agreement. We further argue that our “one-component plasma” model should work well for strongly asymmetric ion liquids. We believe that this work also suggests an improved theory of pseudocapacitance.

Predictive of the quantum capacitance effect on the excitation of plasma waves in graphene transistors with scaling limit

NASA Astrophysics Data System (ADS)

Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Wang, Shao-Wei; Lu, Wei

2015-04-01

Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07689c

Electropolymerized polyazulene as active material in flexible supercapacitors

NASA Astrophysics Data System (ADS)

Suominen, Milla; Lehtimäki, Suvi; Yewale, Rahul; Damlin, Pia; Tuukkanen, Sampo; Kvarnström, Carita

2017-07-01

We report the capacitive behavior of electrochemically polymerized polyazulene films in different ionic liquids. The ionic liquids in this study represent conventional imidazolium based ionic liquids with tetrafluoroborate and bis(trifluoromethylsulfonyl)imide anions as well as an unconventional choline based ionic liquid. The effect of different ionic liquids on the polymerization and capacitive performance of polyazulene films is demonstrated by cyclic voltammetry and electrochemical impedance spectroscopy in a 3-electrode cell configuration. The films exhibit the highest capacitances in the lowest viscosity ionic liquid (92 mF cm-2), while synthesis in high viscosity ionic liquid shortens the conjugation length and results in lower electroactivity (25 mF cm-2). The obtained films also show good cycling stabilities retaining over 90% of their initial capacitance over 1200 p-doping cycles. We also demonstrate, for the first time, flexible polyazulene supercapacitors of symmetric and asymmetric configurations using the choline based ionic liquid as electrolyte. In asymmetric configuration, capacitance of 55 mF (27 mF cm-2) with an equivalent series resistance of 19 Ω is obtained at operating voltage of 1.5 V. Upon increasing the operating voltage up to 2.4 V, the capacitance increases to 72 mF (36 mF cm-2).

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca

2016-04-18

We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

Effect of an electric field on the orientation of a liquid crystal in a cell with a nonuniform director distribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aksenova, E. V., E-mail: e.aksenova@spbu.ru; Karetnikov, A. A.; Karetnikov, N. A.

2016-05-15

The electric field-induced reorientation of a nematic liquid crystal in cells with a planar helicoidal or a homeoplanar structure of a director field is studied theoretically and experimentally. The dependences of the capacitances of these systems on the voltage in an applied electric field below and above the Fréedericksz threshold are experimentally obtained and numerically calculated. The calculations use the director distribution in volume that is obtained by direct minimization of free energy at various voltages. The inhomogeneity of the electric field inside a cell is taken into account. The calculation results are shown to agree with the experimental data.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, H. X.; Zhang, T.; Wang, R. X.

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfO{sub x} film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfO{sub x} matrix. Pt/Ni-NCs embedded HfO{sub x}/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 10{sup 12} electrons/cm{sup 2}, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 10{sup 4} cycles and excellent retention performance of 10{sup 5} s, fulfilling themore » requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.« less

The electrical properties of n-ZnO/p-SnO heterojunction diodes

NASA Astrophysics Data System (ADS)

Javaid, K.; Xie, Y. F.; Luo, H.; Wang, M.; Zhang, H. L.; Gao, J. H.; Zhuge, F.; Liang, L. Y.; Cao, H. T.

2016-09-01

In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C-V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

NASA Astrophysics Data System (ADS)

Zhu, H. X.; Zhang, T.; Wang, R. X.; Zhang, Y. Y.; Li, L. T.; Qiu, X. Y.

2016-05-01

A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

Fast capacitive probe for electromagnetic pulse diagnostic.

PubMed

Lorusso, A; Nassisi, V; Siciliano, M V

2008-06-01

In this work, we report the study and the development of a capacitive probe which is suitable for getting fast and high voltage/current measurements. Due to the fact that fast pulses propagate generally in coaxial structures, the probe realized in this work was a capacitive divider with the divider electrode properly designed to assure the same characteristic impedance of the coaxial structure and the recombination time of the split signals during the propagation. It was a folded cylindrical ring of 1.4 cm long and 0.8 cm thick, which introduce a theoretical delay time of about 100 ps. Analyzing the behavior of the probe closed on 520 Omega, the voltage amplification resulted to be of (3.6+/-0.1) x 10(-4) and, as a consequence, the current attenuation factor of 56+/-1 AV. The response rise time was less than 320 ps, which was limited by oscilloscope bandwave. The capacitor probe can operate voltage measurements of the order of 100 kV.

Ways to suppress click and pop for class D amplifiers

NASA Astrophysics Data System (ADS)

Haishi, Wang; Bo, Zhang; Jiang, Sun

2012-08-01

Undesirable audio click and pop may be generated in a speaker or headphone. Compared to linear (class A/B/AB) amplifiers, class D amplifiers that comprise of an input stage and a modulation stage are more prone to producing click and pop. This article analyzes sources that generate click and pop in class D amplifiers, and corresponding ways to suppress them. For a class D amplifier with a single-ended input, click and pop is likely to be due to two factors. One is from a voltage difference (VDIF) between the voltage of an input capacitance (VCIN) and a reference voltage (VREF) of the input stage, and the other one is from the non-linear switching during the setting up of the bias and feedback voltages/currents (BFVC) of the modulation stage. In this article, a fast charging loop is introduced into the input stage to charge VCIN to roughly near VREF. Then a correction loop further charges or discharges VCIN, substantially equalizing it with VREF. Dummy switches are introduced into the modulation stage to provide switching signals for setting up BFVC, and the power switches are disabled until the BFVC are set up successfully. A two channel single-ended class D amplifier with the above features is fabricated with 0.5 μm Bi-CMOS process. Road test and fast Fourier transform analysis indicate that there is no noticeable click and pop.

Characterization of the Electric Double Layer Formation Dynamics of a Metal/Ionic Liquid/Metal Structure.

PubMed

Schmidt, Elliot; Shi, Sha; Ruden, P Paul; Frisbie, C Daniel

2016-06-15

Although ionic liquids (ILs) have been used extensively in recent years as a high-capacitance "dielectric" in electric double layer transistors, the dynamics of the double layer formation have remained relatively unexplored. Better understanding of the dynamics and relaxation processes involved in electric double layer formation will guide device optimization, particularly with regard to switching speed. In this paper, we explore the dynamical characteristics of an IL in a metal/ionic liquid/metal (M/IL/M) capacitor. In particular, we examine a Au/IL/Au structure where the IL is 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl)trifluorophosphate. The experiments consist of frequency-dependent impedance measurements and time-dependent current vs voltage measurements for applied linear voltage ramps and abrupt voltage steps. The parameters of an equivalent circuit model are determined by fits to the impedance vs frequency data and subsequently verified by calculating the current vs voltage characteristics for the applied potential profiles. The data analysis indicates that the dynamics of the structure are characterized by a wide distribution of relaxation times spanning the range of less than microseconds to longer than seconds. Possible causes for these time scales are discussed.

The Influence of Materials of Electrodes of Sensitized Solar Cells on Their Capacitive and Electrical Characteristics

NASA Astrophysics Data System (ADS)

Lazarenko, P. I.; Kozyukhin, S. A.; Mokshina, A. I.; Sherchenkov, A. A.; Patrusheva, T. N.; Irgashev, R. A.; Lebedev, E. A.; Kozik, V. V.

2018-05-01

An estimation is made of the internal capacitance of sensitized solar cells (SSCs) manufactured by the method of extraction pyrolysis. The structures under study are characterized by a hysteresis in the current-voltage characteristic obtained in the direct and reverse modes of voltage variation. The investigations of SSCs demonstrate a high inertness of the parameters under connection and disconnection of the light source. The use of a transparent conductive ITO-electrode, manufactured by the extraction pyrolysis, increases the external capacitance of the cell and decelerates the processes of current decay after the light source connection compared to the commercial FTO-electrode. The values of charges, capacitances, and SSC charge conservation efficiencies are calculated and the internal resistance of the SSCs under study is estimated. According to the estimations performed, the specimen with an ITO-layer possesses a capacitance equal to C1 = 1.23·10-3 F, which is by two orders of magnitude higher than that of the specimen with a FTO-layer (C2 = 2.06·10-5 F).

Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient Techniques

NASA Technical Reports Server (NTRS)

Neudeck, P.; Kang, S.; Petit, J.; Tabib-Azar, M.

1994-01-01

Dry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C - V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.

Capacitively-coupled inductive sensor

DOEpatents

Ekdahl, Carl A.

1984-01-01

A capacitively coupled inductive shunt current sensor which utilizes capacitive coupling between flanges having an annular inductive channel formed therein. A voltage dividing capacitor is connected between the coupling capacitor and ground to provide immediate capacitive division of the output signal so as to provide a high frequency response of the current pulse to be detected. The present invention can be used in any desired outer conductor such as the outer conductor of a coaxial transmission line, the outer conductor of an electron beam transmission line, etc.

ANSYS simulation of the capacitance coupling of quartz tuning fork gyroscope

NASA Astrophysics Data System (ADS)

Zhang, Qing; Feng, Lihui; Zhao, Ke; Cui, Fang; Sun, Yu-nan

2013-12-01

Coupling error is one of the main error sources of the quartz tuning fork gyroscope. The mechanism of capacitance coupling error is analyzed in this article. Finite Element Method (FEM) is used to simulate the structure of the quartz tuning fork by ANSYS software. The voltage output induced by the capacitance coupling is simulated with the harmonic analysis and characteristics of electrical and mechanical parameters influenced by the capacitance coupling between drive electrodes and sense electrodes are discussed with the transient analysis.

Linear electromagnetic excitation of an asymmetric low pressure capacitive discharge with unequal sheath widths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lieberman, M. A., E-mail: lieber@eecs.berkeley.edu; Lichtenberg, A. J.; Kawamura, E.

It is well-known that standing waves having radially center-high radio frequency (rf) voltage profiles exist in high frequency capacitive discharges. In this work, we determine the symmetric and antisymmetric radially propagating waves in a cylindrical capacitive discharge that is asymmetrically driven at the lower electrode by an rf voltage source. The discharge is modeled as a uniform bulk plasma which at lower frequencies has a thicker sheath at the smaller area powered electrode and a thinner sheath at the larger area grounded electrode. These are self-consistently determined at a specified density using the Child law to calculate sheath widths andmore » the electron power balance to calculate the rf voltage. The fields and the system resonant frequencies are determined. The center-to-edge voltage ratio on the powered electrode is calculated versus frequency, and central highs are found near the resonances. The results are compared with simulations in a similar geometry using a two-dimensional hybrid fluid-analytical code, giving mainly a reasonable agreement. The analytic model may be useful for finding good operating frequencies for a given discharge geometry and power.« less

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Fabrication and investigation of photosensitive MoOx/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Solovan, M. M.; Gavaleshko, N. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Tresso, E.

2016-10-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR ˜ 106. The temperature dependences of the height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasper, M.; Gramse, G.; Hoffmann, J.

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part ofmore » the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.« less

Nanostructure selenium compounds as pseudocapacitive electrodes for high-performance asymmetric supercapacitor.

PubMed

Ma, Guofu; Hua, Fengting; Sun, Kanjun; Fenga, Enke; Peng, Hui; Zhang, Zhiguo; Lei, Ziqiang

2018-01-01

The electrochemical performance of an energy conversion and storage device like the supercapacitor mainly depends on the microstructure and morphology of the electrodes. In this paper, to improve the capacitance performance of the supercapacitor, the all-pseudocapacitive electrodes of lamella-like Bi 18 SeO 29 /BiSe as the negative electrode and flower-like Co 0.85 Se nanosheets as the positive electrode are synthesized by using a facile low-temperature one-step hydrothermal method. The microstructures and morphology of the electrode materials are carefully characterized, and the capacitance performances are also tested. The Bi 18 SeO 29 /BiSe and Co 0.85 Se have high specific capacitance (471.3 F g -1 and 255 F g -1 at 0.5 A g -1 ), high conductivity, outstanding cycling stability, as well as good rate capability. The assembled asymmetric supercapacitor completely based on the pseudocapacitive electrodes exhibits outstanding cycling stability (about 93% capacitance retention after 5000 cycles). Moreover, the devices exhibit high energy density of 24.2 Wh kg -1 at a power density of 871.2 W kg -1 in the voltage window of 0-1.6 V with 2 M KOH solution.

Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

NASA Astrophysics Data System (ADS)

Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

2018-05-01

The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

An equivalent circuit for small atrial trabeculae of frog.

PubMed Central

Jakobsson, E; Barr, L; Connor, J A

1975-01-01

An equivalent electrical circuit has been constructed for small atrial trabecula of frog in a double sucrose gap voltage clamp apparatus. The basic strategy in constructing the circuit was to derive the distribution of membrane capacitance and extracellular resistance from the preparation's response to small voltage displacements near the resting condition, when the membrane conductance is presumably quite low. Then standard Hodgkin-Huxley channels were placed in parallel with the capacitance and the results of voltage clamp experiments were simulated. The results suggest that the membranes of the preparation cannot in fact be clamped near the control voltage nor can the ionic currents be measured directly with reasonable accuracy by axon standards. It may or may not be a realizable goal in the future to define the preparation's electrical behavior well enough to permit the ultimate quantitative description of the membrane's specific ion conductances. The result of this paper suggest that if this goal is achieved using the double sucrose gap voltage clamp, it will be by a detailed quantitative accounting for substantial irreducible errors in voltage control, rather than by experimental achievement of good voltage control. PMID:1203441

Nonlinear effects of hyperpolarizing shifts in activation of mutant Nav1.7 channels on resting membrane potential

PubMed Central

Estacion, Mark

2017-01-01

The Nav1.7 sodium channel is preferentially expressed within dorsal root ganglion (DRG) and sympathetic ganglion neurons. Gain-of-function mutations that cause the painful disorder inherited erythromelalgia (IEM) shift channel activation in a hyperpolarizing direction. When expressed within DRG neurons, these mutations produce a depolarization of resting membrane potential (RMP). The biophysical basis for the depolarized RMP has to date not been established. To explore the effect on RMP of the shift in activation associated with a prototypical IEM mutation (L858H), we used dynamic-clamp models that represent graded shifts that fractionate the effect of the mutation on activation voltage dependence. Dynamic-clamp recording from DRG neurons using a before-and-after protocol for each cell made it possible, even in the presence of cell-to-cell variation in starting RMP, to assess the effects of these graded mutant models. Our results demonstrate a nonlinear, progressively larger effect on RMP as the shift in activation voltage dependence becomes more hyperpolarized. The observed differences in RMP were predicted by the “late” current of each mutant model. Since the depolarization of RMP imposed by IEM mutant channels is known, in itself, to produce hyperexcitability of DRG neurons, the development of pharmacological agents that normalize or partially normalize activation voltage dependence of IEM mutant channels merits further study. NEW & NOTEWORTHY Inherited erythromelalgia (IEM), the first human pain disorder linked to a sodium channel, is widely regarded as a genetic model of neuropathic pain. IEM is produced by Nav1.7 mutations that hyperpolarize activation. These mutations produce a depolarization of resting membrane potential (RMP) in dorsal root ganglion neurons. Using dynamic clamp to explore the effect on RMP of the shift in activation, we demonstrate a nonlinear effect on RMP as the shift in activation voltage dependence becomes more hyperpolarized. PMID:28148645

Investigation of atmospheric pressure glow microdischarge between flat cathode and needle anode in helium and argon

NASA Astrophysics Data System (ADS)

Astafiev, Alexander; Belyaev, Vladimir; Zamchii, Roman; Kudryavtsev, Anatoly; Stepanova, Olga; Chen, Zhaoquan

2016-09-01

DC atmospheric-pressure glow microdischarge was generated between a flat cathode and needle anode with a diameter of 100 μm in a special chamber with helium or argon. Dependences of discharge parameters on an interelectrode gap was investigated with an original experimental setup based on a movable arm on the hinge joint which allowed changing the gap with a step of 5 μm. The gap was varied from 5 to 700 μm. Discharge current was 1-21 mA. Such discharge cell has a very low interelectrode capacitance and provides increasing the stability of the discharge against arc formation (transition to RC oscillations mode) at low currents of 1 mA. A weak dependence of discharge voltage across the gap was revealed in helium at 100-250 μm between the electrodes (normal discharge). In contrast to this, glow microdischarge in argon has a descending current-voltage characteristic and unstable nature. The discharge voltage depending on the gap changes significantly slower than in helium. According to our estimations, the strength of electrical field of positive glow in argon is 5 times lower than in helium. Saint Petersburg State University (Grant No. 0.37.218.2016).

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface

PubMed Central

Yang, Xi

2018-01-01

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal–oxide–semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900-μm2 chip area and achieves 0.022–2.78-MHz unity gain bandwidth and over 65∘ phase margin with a load capacitance of 0.1–15 nF. The prototype amplifier consumes 7.6 μW from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption. PMID:29382183

Giga-seal formation alters properties of sodium channels of human myoballs.

PubMed

Fahlke, C; Rüdel, R

1992-03-01

The influence of giga-seal formation on the properties of the Na+ channels within the covered membrane patch was investigated with a whole-cell pipette and a patch pipette applied to the same cell. Current kinetics, current/voltage relation and channel densities were determined in three combinations: (i) voltage-clamping and current recording with the whole-cell pipette, (ii) voltage-clamping with the whole-cell pipette and current recording with the patch pipette and, (iii) voltage-clamping and current recording with the patch pipette. The Hodgkin-Huxley (1952) parameters tau m and tau h were smaller for the patch currents than for the whole cell, and the h infinity curve was shifted in the negative direction. The channel density was of the order of 10 times smaller. All effects were independent of the extracellular Ca2+ concentration. The capacitive current generated in the patch by the whole-cell Na+ current and its effect on the transmembrane voltage of the patch were evaluated. The kinetic parameters of the Na+ channels in the patch did not depend on whether the voltage was clamped with the whole-cell pipette or the patch pipette. Thus, the results are not due to spurious voltage.

Broadband linear high-voltage amplifier for radio frequency ion traps.

PubMed

Kuhlicke, Alexander; Palis, Klaus; Benson, Oliver

2014-11-01

We developed a linear high-voltage amplifier for small capacitive loads consisting of a high-voltage power supply and a transistor amplifier. With this cost-effective circuit including only standard parts sinusoidal signals with a few volts can be amplified to 1.7 kVpp over a usable frequency range at large-signal response spanning four orders of magnitude from 20 Hz to 100 kHz under a load of 10 pF. For smaller output voltages the maximum frequency shifts up to megahertz. We test different capacitive loads to probe the influence on the performance. The presented amplifier is sustained short-circuit proof on the output side, which is a significant advantage over other amplifier concepts. The amplifier can be used to drive radio frequency ion traps for single charged nano- and microparticles, which will be presented in brief.

Size dependence in tunneling spectra of PbSe quantum-dot arrays.

PubMed

Ou, Y C; Cheng, S F; Jian, W B

2009-07-15

Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.

Investigation of non-uniform airflow signal oscillation during high frequency chest compression

PubMed Central

Sohn, Kiwon; Warwick, Warren J; Lee, Yong W; Lee, Jongwon; Holte, James E

2005-01-01

Background High frequency chest compression (HFCC) is a useful and popular therapy for clearing bronchial airways of excessive or thicker mucus. Our observation of respiratory airflow of a subject during use of HFCC showed the airflow oscillation by HFCC was strongly influenced by the nonlinearity of the respiratory system. We used a computational model-based approach to analyse the respiratory airflow during use of HFCC. Methods The computational model, which is based on previous physiological studies and represented by an electrical circuit analogue, was used for simulation of in vivo protocol that shows the nonlinearity of the respiratory system. Besides, airflow was measured during use of HFCC. We compared the simulation results to either the measured data or the previous research, to understand and explain the observations. Results and discussion We could observe two important phenomena during respiration pertaining to the airflow signal oscillation generated by HFCC. The amplitudes of HFCC airflow signals varied depending on spontaneous airflow signals. We used the simulation results to investigate how the nonlinearity of airway resistance, lung capacitance, and inertance of air characterized the respiratory airflow. The simulation results indicated that lung capacitance or the inertance of air is also not a factor in the non-uniformity of HFCC airflow signals. Although not perfect, our circuit analogue model allows us to effectively simulate the nonlinear characteristics of the respiratory system. Conclusion We found that the amplitudes of HFCC airflow signals behave as a function of spontaneous airflow signals. This is due to the nonlinearity of the respiratory system, particularly variations in airway resistance. PMID:15904523

High-Voltage, Asymmetric-Waveform Generator

NASA Technical Reports Server (NTRS)

Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

2008-01-01

The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise leave the fundamental timing signal unchanged. The buffered timing signal would be fed as input to the level shifter. The output of the level shifter would serve as a timing and control signal for the high-voltage switch, causing the switch to alternately be (1) opened, allowing the capacitive load to be charged from a high-voltage DC power supply; then (2) closed to discharge the capacitive load to ground. Hence, the output waveform would closely approximate a series of exponential charging and discharging curves (see Figure 2).

Tuned-circuit dual-mode Johnson noise thermometers

NASA Astrophysics Data System (ADS)

Shepard, R. L.; Carroll, R. M.; Falter, D. D.; Blalock, T. V.; Roberts, M. J.

1992-02-01

Dual-mode Johnson noise and direct current (DC) resistance thermometers can be used in control systems where prompt indications of temperature changes and long-term accuracy are needed. Such a thermometer is being developed for the SP-100 space nuclear electric power system that requires temperature measurement at 1400 K in space for 10 years, of which 7 are expected to be at full reactor power. Several direct coupled and transformer coupled, tuned resistance inductance capacitance (RLC) circuits that produce a single, continuous voltage signal were evaluated for noise temperature measurement. The simple direct coupled RLC circuit selected provides a mean squared noise voltage that depends only on the capacitance used and the temperature of the sensor, and it is independent of the value of or changes in the sensor resistance. These circuits provide a noise signal with long term accuracy but require integrating noise signals for a finite length of time. The four wire resistor for the noise temperature sensor allows simultaneous DC resistance measurements to be made that provide a prompt, continuous temperature indication signal. The DC current mode is employed continuously, and a noise voltage measurement is made periodically to correct the temperature indication. The differential noise voltage preamplifier used substantially reduces electromagnetic interference (EMI) in the system. A sensor has been tested that should provide good performance (+/- 1 percent accuracy) and long-term (10 year) reliability in space environments. Accurate noise temperature measurements were made at temperatures above 1300 K, where significant insulator shunting occurs, even though shunting does affect the dc resistance measurements and makes the system more susceptible to EMI.

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

NASA Astrophysics Data System (ADS)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

Detailed studies of full-size ATLAS12 sensors

NASA Astrophysics Data System (ADS)

Hommels, L. B. A.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Arratia, M.; Klein, C. T.; Ullan, M.; Fleta, C.; Fernandez-Tejero, J.; Bloch, I.; Gregor, I. M.; Lohwasser, K.; Poley, L.; Tackmann, K.; Trofimov, A.; Yildirim, E.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

2016-09-01

The "ATLAS ITk Strip Sensor Collaboration" R&D group has developed a second iteration of single-sided n+-in-p type micro-strip sensors for use in the tracker upgrade of the ATLAS experiment at the High-Luminosity (HL) LHC. The full size sensors measure approximately 97 × 97mm2 and are designed for tolerance against the 1.1 ×1015neq /cm2 fluence expected at the HL-LHC. Each sensor has 4 columns of 1280 individual 23.9 mm long channels, arranged at 74.5 μm pitch. Four batches comprising 120 sensors produced by Hamamatsu Photonics were evaluated for their mechanical, and electrical bulk and strip characteristics. Optical microscopy measurements were performed to obtain the sensor surface profile. Leakage current and bulk capacitance properties were measured for each individual sensor. For sample strips across the sensor batches, the inter-strip capacitance and resistance as well as properties of the punch-through protection structure were measured. A multi-channel probecard was used to measure leakage current, coupling capacitance and bias resistance for each individual channel of 100 sensors in three batches. The compiled results for 120 unirradiated sensors are presented in this paper, including summary results for almost 500,000 strips probed. Results on the reverse bias voltage dependence of various parameters and frequency dependence of tested capacitances are included for validation of the experimental methods used. Comparing results with specified values, almost all sensors fall well within specification.

Series asymmetric supercapacitors based on free-standing inner-connection electrodes for high energy density and high output voltage

NASA Astrophysics Data System (ADS)

Tao, Jiayou; Liu, Nishuang; Rao, Jiangyu; Ding, Longwei; Al Bahrani, Majid Raissan; Li, Luying; Su, Jun; Gao, Yihua

2014-11-01

Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage.Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr04819a

Guanine-Nucleotide Exchange Factors (RAPGEF3/RAPGEF4) Induce Sperm Membrane Depolarization and Acrosomal Exocytosis in Capacitated Stallion Sperm1

PubMed Central

McPartlin, L.A.; Visconti, P.E.; Bedford-Guaus, S.J.

2011-01-01

Capacitation encompasses the molecular changes sperm undergo to fertilize an oocyte, some of which are postulated to occur via a cAMP-PRKACA (protein kinase A)-mediated pathway. Due to the recent discovery of cAMP-activated guanine nucleotide exchange factors RAPGEF3 and RAPGEF4, we sought to investigate the separate roles of PRKACA and RAPGEF3/RAPGEF4 in modulating capacitation and acrosomal exocytosis. Indirect immunofluorescence localized RAPGEF3 to the acrosome and subacrosomal ring and RAPGEF4 to the midpiece in equine sperm. Addition of the RAPGEF3/RAPGEF4-specific cAMP analogue 8-(p-chlorophenylthio)-2′-O-methyladenosine-3′,5′-cyclic monophosphate (8pCPT) to sperm incubated under both noncapacitating and capacitating conditions had no effect on protein tyrosine phosphorylation, thus supporting a PRKACA-mediated event. Conversely, activation of RAPGEF3/RAPGEF4 with 8pCPT induced acrosomal exocytosis in capacitated equine sperm at rates (34%) similar (P > 0.05) to those obtained in progesterone- and calcium ionophore-treated sperm. In the mouse, capacitation-dependent hyperpolarization of the sperm plasma membrane has been shown to recruit low voltage-activated T-type Ca2+ channels, which later open in response to zona pellucida-induced membrane depolarization. We hypothesized that RAPGEF3 may be inducing acrosomal exocytosis via depolarization-dependent Ca2+ influx, as RAPGEF3/RAPGEF4 have been demonstrated to play a role in the regulation of ion channels in somatic cells. We first compared the membrane potential (Em) of noncapacitated (−37.11 mV) and capacitated (−53.74 mV; P = 0.002) equine sperm. Interestingly, when sperm were incubated (6 h) under capacitating conditions in the presence of 8pCPT, Em remained depolarized (−32.06 mV). Altogether, these experiments support the hypothesis that RAPGEF3/RAPGEF4 activation regulates acrosomal exocytosis via its modulation of Em, a novel role for RAPGEF3/RAPGEF4 in the series of events required to achieve fertilization. PMID:21471298

Contact inspection of Si nanowire with SEM voltage contrast

NASA Astrophysics Data System (ADS)

Ohashi, Takeyoshi; Yamaguchi, Atsuko; Hasumi, Kazuhisa; Ikota, Masami; Lorusso, Gian; Horiguchi, Naoto

2018-03-01

A methodology to evaluate the electrical contact between nanowire (NW) and source/drain (SD) in NW FETs was investigated with SEM voltage contrast (VC). The electrical defects were robustly detected by VC. The validity of the inspection result was verified by TEM physical observations. Moreover, estimation of the parasitic resistance and capacitance was achieved from the quantitative analysis of VC images which were acquired with different scan conditions of electron beam (EB). A model considering the dynamics of EB-induce charging was proposed to calculate the VC. The resistance and capacitance can be determined by comparing the model-based VC with experimentally obtained VC. Quantitative estimation of resistance and capacitance would be valuable not only for more accurate inspection, but also for identification of the defect point.

Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rangel-Kuoppa, Victor-Tapio; Jantsch, Wolfgang; Tonkikh, Alexander

2013-12-04

The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.

Noise effect on performance of IR PVDF pyroelectric detector

NASA Astrophysics Data System (ADS)

Abdullah, K. Al; Batal, M. Anwar; Hamdan, Rawad; Khalil, Toni; Salame, Chafic

2018-05-01

The spin-casting and casting technology were used to make IR pyroelectric PVDF detectors, where the operational amplifier, TC75S63TU, is used to amplify pyroelectrical signal. The pyroelectric coefficient is measured by charge integration method, which is 23 µC/m2K. The voltage responsivity and noise equivalent power depending on the dielectric constant, specific conductivity and loss tangent, which are measured at various frequencies, is estimated where changing of detector capacitance and resistor with frequency is taken into account. Maximum voltage responsivity was for detector thickness d=116.05 µm at chopping frequency (f=0.8Hz). Influence of thermal, Johnson and amplifier noises on output voltage are studied. At frequencies (<1kHz), Johnson noise dominates whereas at frequencies (>1kHz), amplifier voltage noise dominates. The thinner detector, the lower noise affects on output voltage. The optimal signal to noise ratio (SNR) of pyroelectrical detector is for thickness d=30.1 µm at frequency f=20Hz. The reducing electrode area decreases slightly total noise at low frequency and enhances slightly SNR of pyroelectrical detector.

Asymptotically zero power charge-recycling bus architecture for battery-operated ultrahigh data rate ULSI's

NASA Astrophysics Data System (ADS)

Yamauchi, Hiroyuki; Akamatsu, Hironori; Fujita, Tsutomu

1995-04-01

An asymptotically zero power charge recycling bus (CRB) architecture, featuring virtual stacking of the individual bus-capacitance into a series configuration between supply voltage and ground, has been proposed. This CRB architecture makes it possible to reduce not only each bus-swing but also a total equivalent bus-capacitance of the ultramultibit buses running in parallel. The voltage swing of each bus is given by the recycled charge-supplying from the upper adjacent bus capacitance, instead of the power line. The dramatical power reduction was verified by the simulated and measured data. According to these data, the ultrahigh data rate of 25.6 Gb/s can be achieved while maintaining the power dissipation to be less than 100 mW, which corresponds to less than 10% that of the previously reported 0.9 V suppressed bus-swing scheme, at V(sub cc) = 3.6 V for the bus width of 512 b with the bus-capacitance of 14 pF per bit operating at 50 MHz.

A variable capacitance based modeling and power capability predicting method for ultracapacitor

NASA Astrophysics Data System (ADS)

Liu, Chang; Wang, Yujie; Chen, Zonghai; Ling, Qiang

2018-01-01

Methods of accurate modeling and power capability predicting for ultracapacitors are of great significance in management and application of lithium-ion battery/ultracapacitor hybrid energy storage system. To overcome the simulation error coming from constant capacitance model, an improved ultracapacitor model based on variable capacitance is proposed, where the main capacitance varies with voltage according to a piecewise linear function. A novel state-of-charge calculation approach is developed accordingly. After that, a multi-constraint power capability prediction is developed for ultracapacitor, in which a Kalman-filter-based state observer is designed for tracking ultracapacitor's real-time behavior. Finally, experimental results verify the proposed methods. The accuracy of the proposed model is verified by terminal voltage simulating results under different temperatures, and the effectiveness of the designed observer is proved by various test conditions. Additionally, the power capability prediction results of different time scales and temperatures are compared, to study their effects on ultracapacitor's power capability.

On the Relationship Between Schottky Barrier Capacitance and Mixer Performance at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.

1996-01-01

The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.

Effect of charge on the current-voltage characteristics of silicon pin structures with and without getter annealing under beta irradiation of Ni-63.

PubMed

Nagornov, Yuri S

2018-05-01

The charge model for efficiency of betavoltaics effect is proposed. It allows calculating the charge value for pin structures under irradiation of Ni-63. We approximated the current-voltage characteristics of the structures using an equivalent diode circuit with a charge on the barrier capacitance. We calculated the charge function from current-voltage characteristics for two types of silicon pin structures - with and without getter annealing. The charging on the surface of pin structure decreases the efficiency of betavoltaics effect. Value of charge for our structures is changed in the range from -50 to +15mC/cm 2 and depends on the applied potential. The getter annealing allows getting the structures with a higher efficiency of betavoltaic effect, but it does not exclude the surface charging under beta irradiation from Ni-63. Copyright © 2018 Elsevier Ltd. All rights reserved.

Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Chen, Bingbing; Shen, Yanjiao; Guo, Jianxin; Liu, Baoting; Dai, Xiuhong; Xu, Ying; Mai, Yaohua

2017-11-01

A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics.

Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

NASA Astrophysics Data System (ADS)

Gülnahar, Murat

2014-12-01

In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

Ferroelectric Plasma Sources for Ion Beam Neutralization

NASA Astrophysics Data System (ADS)

Stepanov, A.; Gilson, E. P.; Grisham, L. R.; Davidson, R. C.

2014-10-01

A 40 keV Ar+ beam with a dimensionless perveance of 4 ×10-4 is propagated through a Ferroelectric Plasma Source (FEPS) to determine the effects of charge neutralization on the transverse beam profile. Neutralization is established 5 μs after the FEPS is triggered, and lasts between 10 and 35 μs. When the beam is fully neutralized, the profile has a Gaussian shape with a half-angle divergence of 0.87°, which is attributed to ion optics. The effects of the resistance and capacitance in the pulser circuit on the FEPS discharge are studied. The electron current emitted by the FEPS is calculated from measurements of the forward and return currents in the circuit. Electron emission typically begins 0.5 μs after the driving pulse, lasting for tens of μs, which is similar to the duration of ion beam neutralization. The total emitted charge does not depend significantly on the resistance, but depends strongly on the storage capacitance. Lowering the capacitance from 141 nF to 47 nF results in a near-complete shut-off of charge emission, although the amplitude of the applied voltage pulse is as high as when high-density plasma is produced. Overall, the data suggest that ferroelectric effects are significant in the physics of the FEPS discharge.

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Cristea, D.; Meyler, B.; Yofis, S.; Shneider, Y.; Atiya, G.; Cohen-Hyams, T.; Kauffmann, Y.; Kaplan, W. D.; Eisenstein, G.

2015-01-01

We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO2-HfO2. Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible.

Controlling the electric charge of gold nanoplatelets on an insulator by field emission nc-AFM

NASA Astrophysics Data System (ADS)

Baris, Bulent; Alchaar, Mohanad; Prasad, Janak; Gauthier, Sébastien; Dujardin, Erik; Martrou, David

2018-03-01

Charging of 2D Au nanoplatelets deposited on an insulating SiO2 substrate to or from the tip of a non-contact atomic force microscope (nc-AFM) is demonstrated. Charge transfer is controlled by monitoring the resonance frequency shift Δf(V) during the bias voltage ramp V applied to the tip-back electrode junction. The onset of charge transfer is revealed by a transition from a capacitive parabolic behavior to a constant Δf(V) region for both polarities. An analytical model, based on charging by electron field emission, shows that the field-emitted current saturates shortly after the onset of the charging, due to the limiting effect of the charge-induced rise of the Au platelet potential. The value of this current plateau depends only on the rate of the bias voltage ramp and on the value of the platelet/SiO2/back electrode capacitance. This analysis is confirmed by numerical simulations based on a virtual nc-AFM model that faithfully matches the experimental data. Our charging protocol could be used to tune the potential of the platelets at the single charge level.

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Nanostructured bilayer anodic TiO2/Al2O3 metal-insulator-metal capacitor.

PubMed

Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

2013-10-01

This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/microm2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.

Tunneling barrier in nanoparticle junctions of La2/3(Ca,Sr)1/3MnO3: Nonlinear current-voltage characteristics

NASA Astrophysics Data System (ADS)

Niebieskikwiat, D.; Sánchez, R. D.; Lamas, D. G.; Caneiro, A.; Hueso, L. E.; Rivas, J.

2003-05-01

We study the nonlinear current-voltage (I-V) characteristics and analyze the voltage-dependent tunneling conductance in nanoparticles of La2/3A1/3MnO3 (A=Ca, Sr). The powders were prepared by different wet-chemical routes and low calcination temperatures were used to obtain an average particle size D≈30 nm. The data are comprehensively explained in terms of the tunneling picture, which allows one to estimate the height of the grain boundary insulating barrier (φ) for each sample. For constant D, our results show that the sample preparation route is mainly responsible for the value of φ in nanoparticles, while the Coulomb gap in the Coulomb blockade regime is ˜3 times higher for Sr- than for Ca-doping. We also show that a small fraction of the barriers contribute to the nonlinear transport, and the current is mainly carried through low-resistive percolated paths. In addition, despite the different barrier strengths, the low-field magnetoresistance (LFMR) is similar for all samples, implying that φ is not the fundamental parameter determining the LFMR.

Closed-form nonlinear frequency of flexoelectric nanobeams with surface and nonlocal effects under closed circuit electric field

NASA Astrophysics Data System (ADS)

Barati, Mohammad Reza

2018-02-01

Nonlocal and surface effects on nonlinear vibration characteristics of a flexoelectric nanobeams under magnetic field are examined. Eringen’s nonlocal elasticity as well as surface elasticity theories are employed to describe the size-dependency of the flexoelectric nanobeam. Also, flexoelectricity is an important size-dependent phenomena for piezoelectric structures at nanoscale, related to the strain gradient-electric polarization coupling. After the derivation of governing equation via Hamilton’s principle, Galerkin method is employed to satisfy boundary conditions. Also, analytical procedures are implemented to obtain the closed-form nonlinear frequency of flexoelectric nanobeam. It is showed that magnetic field intensity, flexoelectric parameter, nonlocal parameter, elastic foundation and applied voltage on the top surface of the nanobeam have great influences on nonlinear vibration frequency.

Temperature-Dependent Modeling and Crosstalk Analysis in Mixed Carbon Nanotube Bundle Interconnects

NASA Astrophysics Data System (ADS)

Rai, Mayank Kumar; Garg, Harsh; Kaushik, B. K.

2017-08-01

The temperature-dependent circuit modeling and performance analysis in terms of crosstalk in capacitively coupled mixed carbon nanotube bundle (MCB) interconnects, at the far end of the victim line, have been analyzed with four different structures of MCBs (MCB-1, MCB-2, MCB-3 and MCB-4) constituted under case 1 and case 2 at the 22-nm technology node. The impact of tunneling and intershell coupling between adjacent shells on temperature-dependent equivalent circuit parameters of a multi-walled carbon nanotube bundle are also critically analyzed and employed for different MCB structures under case 1. A similar analysis is performed for copper interconnects and comparisons are made between results obtained through these analyses over temperatures ranging from 300 K to 500 K. The simulation program with integrated circuit emphasis simulation results reveals that, compared with all MCB structures under case 1 and case 2, with rise in temperature from 300 K to 500 K, crosstalk-induced noise voltage levels at the far end of the victim line are found to be significantly large in copper. It is also observed that due to the dominance of larger temperature-dependent resistance and ground capacitance in case 1, the MCB-2 is of lower crosstalk-induced noise voltage levels than other structures of MCBs. On the other hand, the MCB-1 has smaller time duration of victim output. Results further reveal that, compared with case 2 of MCB, with rise in temperatures, the victim line gets less prone to crosstalk-induced noise in MCB interconnects constituted under case 1, due to tunneling effects and intershell coupling between adjacent shells. Based on these comparative results, a promising MCB structure (MCB-2) has been proposed among other structures under the consideration of tunneling effects and intershell coupling (case 1).

Current distribution measurements inside an electromagnetic plasma gun operated in a gas-puff mode.

PubMed

Poehlmann, Flavio R; Cappelli, Mark A; Rieker, Gregory B

2010-12-01

Measurements are presented of the time-dependent current distribution inside a coaxial electromagnetic plasma gun. The measurements are carried out using an array of six axially distributed dual-Rogowski coils in a balanced circuit configuration. The radial current distributions indicate that operation in the gas-puff mode, i.e., the mode in which the electrode voltage is applied before injection of the gas, results in a stationary ionization front consistent with the presence of a plasma deflagration. The effects of varying the bank capacitance, transmission line inductance, and applied electrode voltage were studied over the range from 14 to 112 μF, 50 to 200 nH, and 1 to 3 kV, respectively.

Current distribution measurements inside an electromagnetic plasma gun operated in a gas-puff mode

PubMed Central

Poehlmann, Flavio R.; Cappelli, Mark A.; Rieker, Gregory B.

2010-01-01

Measurements are presented of the time-dependent current distribution inside a coaxial electromagnetic plasma gun. The measurements are carried out using an array of six axially distributed dual-Rogowski coils in a balanced circuit configuration. The radial current distributions indicate that operation in the gas-puff mode, i.e., the mode in which the electrode voltage is applied before injection of the gas, results in a stationary ionization front consistent with the presence of a plasma deflagration. The effects of varying the bank capacitance, transmission line inductance, and applied electrode voltage were studied over the range from 14 to 112 μF, 50 to 200 nH, and 1 to 3 kV, respectively. PMID:21267082

SiO 2/SiC interface proved by positron annihilation

NASA Astrophysics Data System (ADS)

Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

2003-06-01

We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.

Dependence of Radar Backscatter on the Energetics of the Air-Sea Interface

DTIC Science & Technology

1990-07-01

14 3 Figure 41a. Shematic Spectrum of Wind Speed Near the Ground Estimated from a Study of Van der Hoven (1957...O.O0 Figure 41a. Schematic Spectrum of Wind Speed Near the Ground Estimated from a Study of Van der Hoven (1957) (from Lumley and Panofsky, 1964) The...resolved is 0.6 to 8.0s. Following Der (1976), the sensors are capacitance transduction devices which produce output voltage signals proportional to surface

Multimode and multistate ladder oscillator and frequency recognition device

NASA Technical Reports Server (NTRS)

Aumann, Herbert M. (Inventor)

1976-01-01

A ladder oscillator composed of capacitive and inductive impedances connected together to form a ladder network which has a chosen number N oscillation modes at N different frequencies. Each oscillation mode is characterized by a unique standing wave voltage pattern along the nodes of the ladder oscillator, with the mode in which the ladder oscillator is oscillating being determinable from the amplitudes or phase of the oscillations at the nodes. A logic circuit may be connected to the nodes of the oscillator to compare the phases of selected nodes and thereby determine which mode the oscillator is oscillating in. A ladder oscillator composed of passive capacitive and inductive impedances can be utilized as a frequency recognition device, since the passive ladder oscillator will display the characteristic standing wave patterns if an input signal impressed upon the ladder oscillator is close to one of the mode frequencies of the oscillator. A CL ladder oscillator having series capacitive impedances and shunt inductive impedances can exhibit sustained and autonomous oscillations if active nonlinear devices are connected in parallel with the shunt inductive impedances. The active CL ladder oscillator can be synchronized to input frequencies impressed upon the oscillator, and will continue to oscillate after the input signal has been removed at a mode frequency which is, in general, nearest to the input signal frequency. Autonomous oscillations may also be obtained as desired from the active CL ladder oscillator at the mode frequencies.

Ice detector

NASA Technical Reports Server (NTRS)

Weinstein, Leonard M. (Inventor)

1988-01-01

An ice detector is provided for the determination of the thickness of ice on the outer surface on an object (e.g., aircraft) independently of temperature or the composition of the ice. First capacitive gauge, second capacitive gauge, and temperature gauge are embedded in embedding material located within a hollowed out portion of the outer surface. This embedding material is flush with the outer surface to prevent undesirable drag. The first capacitive gauge, second capacitive gauge, and the temperature gauge are respectively connected to first capacitive measuring circuit, second capacitive measuring circuit, and temperature measuring circuit. The geometry of the first and second capacitive gauges is such that the ratio of the voltage outputs of the first and second capacitance measuring circuits is proportional to the thickness of ice, regardless of ice temperature or composition. This ratio is determined by offset and dividing circuit.

Varactor with integrated micro-discharge source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Manginell, Ronald P.; Moorman, Matthew W.

2016-10-18

An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of themore » np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).« less

Capacitors and Resistance-Capacitance Networks.

ERIC Educational Resources Information Center

Balabanian, Norman; Root, Augustin A.

This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors.

PubMed

Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Yu, Anqi; Lu, Wei

2014-11-07

Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

Investigation of complexity dynamics in a DC glow discharge magnetized plasma using recurrence quantification analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitra, Vramori; Sarma, Bornali; Sarma, Arun

Recurrence is an ubiquitous feature which provides deep insights into the dynamics of real dynamical systems. A suitable tool for investigating recurrences is recurrence quantification analysis (RQA). It allows, e.g., the detection of regime transitions with respect to varying control parameters. We investigate the complexity of different coexisting nonlinear dynamical regimes of the plasma floating potential fluctuations at different magnetic fields and discharge voltages by using recurrence quantification variables, in particular, DET, L{sub max}, and Entropy. The recurrence analysis reveals that the predictability of the system strongly depends on discharge voltage. Furthermore, the persistent behaviour of the plasma time seriesmore » is characterized by the Detrended fluctuation analysis technique to explore the complexity in terms of long range correlation. The enhancement of the discharge voltage at constant magnetic field increases the nonlinear correlations; hence, the complexity of the system decreases, which corroborates the RQA analysis.« less

Development and Electrochemical Investigations of an EIS- (Electrolyte-Insulator-Semiconductor) based Biosensor for Cyanide Detection

PubMed Central

Turek, Monika; Ketterer, Lothar; Claβen, Melanie; Berndt, Heinz K.; Elbers, Gereon; Krüger, Peter; Keusgen, Michael; Schöning, Michael J.

2007-01-01

A cyanide biosensor based on a pH-sensitive p-doped electrolyte-insulator-semiconductor (EIS) structure with an immobilised enzyme (cyanidase) is realised at the laboratory scale. The immobilisation of the cyanidase is performed in two distinct steps: first, the covalent coupling of cyanidase to an N-hydroxysuccinimide- (NHS) activated Sepharose™ gel and then, the physical entrapment of NHS-activated Sepharose™ with the immobilised cyanidase in a dialysis membrane onto the EIS structure. The immobilisation of the cyanidase to the NHS-activated Sepharose™ is studied by means of gel electrophoresis measurements and investigations using an ammonia- (NH3) selective electrode. For the electrochemical characterisation of the cyanide biosensor, capacitance/voltage and constant capacitance measurements, respectively, have been carried out. A differential measurement procedure is presented to evaluate the cyanide concentration-dependent biosensor signals.

Multi-level Capacitive Memory Effect in Metal/Oxide/Floating-Schottky Junction

NASA Astrophysics Data System (ADS)

Choi, Gahyun; Jung, Sungchul; Yoon, Hoon Hahn; Jeon, Youngeun; Park*, Kibog

2015-03-01

A memory computing (memcomputing) system can store and process information at the same physical location simultaneously. The essential components of memcomputing are passive devices with memory functionality, such as memristor, memcapacitor, and meminductor. We report the realization of a Schottky contact memcapacitor compatible with the current Si CMOS technology. Our memcapacitor is formed by depositing a stack of metal and oxide thin films on top of a Schottky contact. Here, the metal electrode of the Schottky contact is floating. The working principle of our memcapacitor is based on the fact that the depletion width of the Schottky contact varies according to the amount of charge stored in the floating metal electrode. The voltage pulse applied across the Metal/Oxide/Floating-Schottky junction controls charge flow in the Schottky contact and determines the amount of charge stored eventually. It is demonstrated experimentally that our memcapacitor exhibits hysteresis behaviors in capacitance-voltage curves and possesses multiple capacitance values that are switchable by the applied voltage pulse. Supported by NRF in South Korea (2013R1A1A2007070).

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Analytical expressions for noise and crosstalk voltages of the High Energy Silicon Particle Detector

NASA Astrophysics Data System (ADS)

Yadav, I.; Shrimali, H.; Liberali, V.; Andreazza, A.

2018-01-01

The paper presents design and implementation of a silicon particle detector array with the derived closed form equations of signal-to-noise ratio (SNR) and crosstalk voltages. The noise analysis demonstrates the effect of interpixel capacitances (IPC) between center pixel (where particle hits) and its neighbouring pixels, resulting as a capacitive crosstalk. The pixel array has been designed and simulated in a 180 nm BCD technology of STMicroelectronics. The technology uses the supply voltage (VDD) of 1.8 V and the substrate potential of -50 V. The area of unit pixel is 250×50 μm2 with the substrate resistivity of 125 Ωcm and the depletion depth of 30 μm. The mathematical model includes the effects of various types of noise viz. the shot noise, flicker noise, thermal noise and the capacitive crosstalk. This work compares the results of noise and crosstalk analysis from the proposed mathematical model with the circuit simulation results for a given simulation environment. The results show excellent agreement with the circuit simulations and the mathematical model. The average relative error (AVR) generated for the noise spectral densities with respect to the simulations and the model is 12% whereas the comparison gives the errors of 3% and 11.5% for the crosstalk voltages and the SNR results respectively.

A hybrid filter to mitigate harmonics caused by nonlinear load and resonance caused by power factor correction capacitor

NASA Astrophysics Data System (ADS)

Adan, N. F.; Soomro, D. M.

2017-01-01

Power factor correction capacitor (PFCC) is commonly installed in industrial applications for power factor correction (PFC). With the expanding use of non-linear equipment such as ASDs, power converters, etc., power factor (PF) improvement has become difficult due to the presence of harmonics. The resulting capacitive impedance of the PFCC may form a resonant circuit with the source inductive reactance at a certain frequency, which is likely to coincide with one of the harmonic frequency of the load. This condition will trigger large oscillatory currents and voltages that may stress the insulation and cause subsequent damage to the PFCC and equipment connected to the power system (PS). Besides, high PF cannot be achieved due to power distortion. This paper presents the design of a three-phase hybrid filter consisting of a single tuned passive filter (STPF) and shunt active power filter (SAPF) to mitigate harmonics and resonance in the PS through simulation using PSCAD/EMTDC software. SAPF was developed using p-q theory. The hybrid filter has resulted in significant improvement on both total harmonic distortion for voltage (THDV) and total demand distortion for current (TDDI) with maximum values of 2.93% and 9.84% respectively which were within the recommended IEEE 519-2014 standard limits. Regarding PF improvement, the combined filters have achieved PF close to desired PF at 0.95 for firing angle, α values up to 40°.

Capacitance measuring device

DOEpatents

Andrews, W.H. Jr.

1984-08-01

A capacitance measuring circuit is provided in which an unknown capacitance is measured by comparing the charge stored in the unknown capacitor with that stored in a known capacitance. Equal and opposite voltages are repetitively simultaneously switched onto the capacitors through an electronic switch driven by a pulse generator to charge the capacitors during the ''on'' portion of the cycle. The stored charge is compared by summing discharge currents flowing through matched resistors at the input of a current sensor during the ''off'' portion of the switching cycle. The net current measured is thus proportional to the difference in value of the two capacitances. The circuit is capable of providing much needed accuracy and stability to a great variety of capacitance-based measurement devices at a relatively low cost.

A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

NASA Astrophysics Data System (ADS)

Dianat, Pouya

Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

PubMed Central

Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

2016-01-01

High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

Understanding the pseudocapacitance of RuO2 from joint density functional theory

NASA Astrophysics Data System (ADS)

Zhan, Cheng; Jiang, De-en

2016-11-01

Pseudocapacitors have been experimentally studied for many years in electric energy storage. However, first principles understanding of the pseudocapacitive behavior is still not satisfactory due to the complexity involved in modeling electrochemistry. In this paper, we applied joint density functional theory (JDFT) to simulate the pseudocapacitive behavior of RuO2, a prototypical material, in a model electrolyte. We obtained from JDFT a capacitive curve which showed a redox peak position comparable to that in the experimental cyclic voltammetry (CV) curve. We found that the experimental turning point from double-layer to pseudocapacitive charge storage at low scan rates could be explained by the hydrogen adsorption at low coverage. As the electrode voltage becomes more negative, H coverage increases and causes the surface-structure change, leading to bended -OH bonds at the on-top oxygen atoms and large capacitance. This H coverage-dependent capacitance can explain the high pseudocapacitance of hydrous RuO2. Our work here provides a first principles understanding of the pseudocapacitance for RuO2 in particular and for transition-metal oxides in general.

Structure-based capacitance modeling and power loss analysis for the latest high-performance slant field-plate trench MOSFET

NASA Astrophysics Data System (ADS)

Kobayashi, Kenya; Sudo, Masaki; Omura, Ichiro

2018-04-01

Field-plate trench MOSFETs (FP-MOSFETs), with the features of ultralow on-resistance and very low gate–drain charge, are currently the mainstream of high-performance applications and their advancement is continuing as low-voltage silicon power devices. However, owing to their structure, their output capacitance (C oss), which leads to main power loss, remains to be a problem, especially in megahertz switching. In this study, we propose a structure-based capacitance model of FP-MOSFETs for calculating power loss easily under various conditions. Appropriate equations were modeled for C oss curves as three divided components. Output charge (Q oss) and stored energy (E oss) that were calculated using the model corresponded well to technology computer-aided design (TCAD) simulation, and we validated the accuracy of the model quantitatively. In the power loss analysis of FP-MOSFETs, turn-off loss was sufficiently suppressed, however, mainly Q oss loss increased depending on switching frequency. This analysis reveals that Q oss may become a significant issue in next-generation high-efficiency FP-MOSFETs.

Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition.

PubMed

Zhan, Hualin; Garrett, David J; Apollo, Nicholas V; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

2016-01-25

High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm(3), were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

Voltage-Induced Nonlinear Conduction Properties of Epoxy Resin/Micron-Silver Particles Composites

NASA Astrophysics Data System (ADS)

Qu, Zhaoming; Lu, Pin; Yuan, Yang; Wang, Qingguo

2018-01-01

The nonlinear conduction properties of epoxy resin (ER)/micron-silver particles (MP) composites were investigated. Under sufficient high intensity applied constant voltage, the obvious nonlinear conduction properties of the samples with volume fraction 25% were found. With increments in the voltage, the conductive switching effect was observed. The nonlinear conduction mechanism of the ER/MP composites under high applied voltages could be attributed to the electrical current conducted via discrete paths of conductive particles induced by the electric field. The test results show that the ER/MP composites with nonlinear conduction properties are of great potential application in electromagnetic protection of electron devices and systems.

Capacitance of Ti 3C 2T x MXene in Ionic Liquid Electrolyte

DOE PAGES

Lin, Zifeng; Barbara, Daffos; Taberna, Pierre-Louis; ...

2016-04-14

Ti 3C 2T x MXene, a two-dimensional (2D) early transition metal carbide, has shown an extremely high volumetric capacitance in aqueous electrolytes, but in a narrow voltage window (less than 1.23 V). The utilization of MXene materials in ionic liquid electrolytes with a large voltage window has never been addressed. Here, we report the preparation of the Ti 3C 2T x MXene ionogel film by vacuum filtration for use as supercapacitor electrodes operating in 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMI-TFSI) neat ionic liquid electrolyte. Due to the disordered structure of the Ti 3C 2T x hydrogel film and a stable spacing after vacuummore » drying, achieved through ionic liquid electrolyte immersion of the Ti 3C 2T x hydrogel film, the Ti 3C 2T x surface became accessible to EMI + and TFSI - ions. A capacitance of 70 F g -1 together with a large voltage window of 3 V was obtained at a scan rate of 20 mV s -1 in neat EMI-TFSI electrolyte. The electrochemical signature indicates a capacitive behavior even at a high scan rate (500 mV s -1) and a high power performance. This work opens up the possibilities of using MXene materials with various ionic liquid electrolytes.« less

Transparent Flexible Active Faraday Cage Enables In Vivo Capacitance Measurement in Assembled Microsensor.

PubMed

Ahmadi, Mahdi; Rajamani, Rajesh; Sezen, Serdar

2017-10-01

Capacitive micro-sensors such as accelerometers, gyroscopes and pressure sensors are increasingly used in the modern electronic world. However, the in vivo use of capacitive sensing for measurement of pressure or other variables inside a human body suffers from significant errors due to stray capacitance. This paper proposes a solution consisting of a transparent thin flexible Faraday cage that surrounds the sensor. By supplying the active sensing voltage simultaneously to the deformable electrode of the capacitive sensor and to the Faraday cage, the stray capacitance during in vivo measurements can be largely eliminated. Due to the transparency of the Faraday cage, the top and bottom portions of a capacitive sensor can be accurately aligned and assembled together. Experimental results presented in the paper show that stray capacitance is reduced by a factor of 10 by the Faraday cage, when the sensor is subjected to a full immersion in water.

Temperature dependent charge transport studies across thermodynamic glass transition in P3HT:PCBM bulk heterojunction: insight from J-V and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Sarkar, Atri; Rahaman, Abdulla Bin; Banerjee, Debamalya

2018-03-01

Temperature dependent charge transport properties of P3HT:PCBM bulk heterojunction are analysed by dc and ac measurements under dark conditions across a wide temperature range of 110-473 K, which includes the thermodynamic glass transition temperature (Tg ˜320 K) of the system. A change from Ohmic conduction to space charge limited current conduction at higher (⩾1.2 V) applied bias voltages above  ⩾200 K is observed from J-V characteristics. From capacitance-voltage (C-V) measurement at room temperature, the occurrence of a peak near the built-in voltage is observed below the dielectric relaxation frequency, originating from the competition between drift and diffusion driven motions of charges. Carrier concentration (N) is calculated from C-V measurements taken at different temperatures. Room temperature mobility values at various applied bias voltages are in accordance with that obtained from transient charge extraction by linearly increasing voltage measurement. Sample impedance is measured over five decades of frequency across temperature range by using lock-in detection. This data is used to extract temperature dependence of carrier mobility (μ), and dc conductivity (σ_dc ) which is low frequency extrapolation of ac conductivity. An activation energy of  ˜126 meV for the carrier hopping process at the metal-semiconductor interface is estimated from temperature dependence of σ_dc . Above T g, μ levels off to a constant value, whereas σ_dc starts to decrease after a transition knee at T g that can be seen as a combined effect of changes in μ and N. All these observed changes across T g can be correlated to enhanced polymer motion above the glass transition.

Off-set stabilizer for comparator output

DOEpatents

Lunsford, James S.

1991-01-01

A stabilized off-set voltage is input as the reference voltage to a comparator. In application to a time-interval meter, the comparator output generates a timing interval which is independent of drift in the initial voltage across the timing capacitor. A precision resistor and operational amplifier charge a capacitor to a voltage which is precisely offset from the initial voltage. The capacitance of the reference capacitor is selected so that substantially no voltage drop is obtained in the reference voltage applied to the comparator during the interval to be measured.

Predictive of the quantum capacitance effect on the excitation of plasma waves in graphene transistors with scaling limit.

PubMed

Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Wang, Shao-Wei; Lu, Wei

2015-04-28

Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8 TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5 TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.

Experimental Investigation of a Direct-drive Hall Thruster and Solar Array System at Power Levels up to 10 kW

NASA Technical Reports Server (NTRS)

Snyder, John S.; Brophy, John R.; Hofer, Richard R.; Goebel, Dan M.; Katz, Ira

2012-01-01

As NASA considers future exploration missions, high-power solar-electric propulsion (SEP) plays a prominent role in achieving many mission goals. Studies of high-power SEP systems (i.e. tens to hundreds of kilowatts) suggest that significant mass savings may be realized by implementing a direct-drive power system, so NASA recently established the National Direct-Drive Testbed to examine technical issues identified by previous investigations. The testbed includes a 12-kW solar array and power control station designed to power single and multiple Hall thrusters over a wide range of voltages and currents. In this paper, single Hall thruster operation directly from solar array output at discharge voltages of 200 to 450 V and discharge powers of 1 to 10 kW is reported. Hall thruster control and operation is shown to be simple and no different than for operation on conventional power supplies. Thruster and power system electrical oscillations were investigated over a large range of operating conditions and with different filter capacitances. Thruster oscillations were the same as for conventional power supplies, did not adversely affect solar array operation, and were independent of filter capacitance from 8 to 80 ?F. Solar array current and voltage oscillations were very small compared to their mean values and showed a modest dependence on capacitor size. No instabilities or anomalous behavior were observed in the thruster or power system at any operating condition investigated, including near and at the array peak power point. Thruster startup using the anode propellant flow as the power 'switch' was shown to be simple and reliable with system transients mitigated by the proper selection of filter capacitance size. Shutdown via cutoff of propellant flow was also demonstrated. A simple electrical circuit model was developed and is shown to have good agreement with the experimental data.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

Cavallo's multiplier for in situ generation of high voltage

NASA Astrophysics Data System (ADS)

Clayton, S. M.; Ito, T. M.; Ramsey, J. C.; Wei, W.; Blatnik, M. A.; Filippone, B. W.; Seidel, G. M.

2018-05-01

A classic electrostatic induction machine, Cavallo's multiplier, is suggested for in situ production of very high voltage in cryogenic environments. The device is suitable for generating a large electrostatic field under conditions of very small load current. Operation of the Cavallo multiplier is analyzed, with quantitative description in terms of mutual capacitances between electrodes in the system. A demonstration apparatus was constructed, and measured voltages are compared to predictions based on measured capacitances in the system. The simplicity of the Cavallo multiplier makes it amenable to electrostatic analysis using finite element software, and electrode shapes can be optimized to take advantage of a high dielectric strength medium such as liquid helium. A design study is presented for a Cavallo multiplier in a large-scale, cryogenic experiment to measure the neutron electric dipole moment.

Mountain Plains Learning Experience Guide: Radio and T.V. Repair. Course: D.C. Circuits.

ERIC Educational Resources Information Center

Hoggatt, P.; And Others

One of four individualized courses included in a radio and television repair curriculum, this course deals with the basic electrical properties of current, voltage, resistance, magnetism, mutual induction, and capacitance. The course is comprised of ten units: (1) Current, (2) Voltage, (3) Resistance, (4) Measuring Voltage and Current in Series…

Nanostructure selenium compounds as pseudocapacitive electrodes for high-performance asymmetric supercapacitor

PubMed Central

Hua, Fengting; Sun, Kanjun; Fenga, Enke; Peng, Hui; Zhang, Zhiguo; Lei, Ziqiang

2018-01-01

The electrochemical performance of an energy conversion and storage device like the supercapacitor mainly depends on the microstructure and morphology of the electrodes. In this paper, to improve the capacitance performance of the supercapacitor, the all-pseudocapacitive electrodes of lamella-like Bi18SeO29/BiSe as the negative electrode and flower-like Co0.85Se nanosheets as the positive electrode are synthesized by using a facile low-temperature one-step hydrothermal method. The microstructures and morphology of the electrode materials are carefully characterized, and the capacitance performances are also tested. The Bi18SeO29/BiSe and Co0.85Se have high specific capacitance (471.3 F g–1 and 255 F g–1 at 0.5 A g–1), high conductivity, outstanding cycling stability, as well as good rate capability. The assembled asymmetric supercapacitor completely based on the pseudocapacitive electrodes exhibits outstanding cycling stability (about 93% capacitance retention after 5000 cycles). Moreover, the devices exhibit high energy density of 24.2 Wh kg–1 at a power density of 871.2 W kg–1 in the voltage window of 0–1.6 V with 2 M KOH solution. PMID:29410830

Macro Fiber Piezocomposite Actuator Poling Study

NASA Technical Reports Server (NTRS)

Werlink, Rudy J.; Bryant, Robert G.; Manos, Dennis

2002-01-01

The performance and advantages of Piezocomposite Actuators are to provide a low cost, in-situ actuator/sensor that is flexible, low profile and high strain per volt performance in the same plane of poled voltage. This paper extends reported data for the performance of these Macrofiber Composite (MFC) Actuators to include 4 progressively narrower Intedigitized electrode configurations with several line widths and spacing ratios. Data is reported for max free strain, average strain per applied volt, poling (alignment of the electric dipoles of the PZT ceramic) voltage vs. strain and capacitance, time to poling voltage 95% saturation. The output strain per volt progressively increases as electrode spacing decreases, with saturation occurring at lower poling voltages. The narrowest spacing ratio becomes prone to voltage breakdown or short circuits limiting the spacing width with current fabrication methods. The capacitance generally increases with increasing poling voltage level but has high sensitivity to factors such as temperature, moisture and time from poling which limit its usefulness as a simple indicator. The total time of applied poling voltage to saturate or fully line up the dipoles in the piezoceramic was generally on the order of 5-20 seconds. Less sensitivity to poling due to the applied rate of voltage increase over a 25 to 500 volt/second rate range was observed.

Nonlinear effective permittivity of field grading composite dielectrics

NASA Astrophysics Data System (ADS)

Yang, Xiao; Zhao, Xiaolei; Li, Qi; Hu, Jun; He, Jinliang

2018-02-01

Field grading composite dielectrics with good nonlinear electrical properties can function as smart materials for electrical field control in a high-voltage apparatus. Besides the well-documented nonlinear conducting behavior, the field-dependent effective permittivity of field grading composites were also reported; however, in-depth research on the mechanism and influencing factors of this nonlinear permittivity are absent. This paper theoretically discusses the origin of the nonlinear effective permittivity, and the mechanism is illustrated through the waveform analysis of the nonlinear response of ZnO microvaristor/silicone rubber composites under a pure AC field. The field-dependent effective permittivity and loss property of the ZnO composites are measured by a dielectric spectrometer in both DC and AC fields under different frequencies. Through comparison of measurement results and theoretical models, the influence of the filler concentration, frequency, and time domain characteristics of the applied field on the nonlinear permittivity of the field grading composites are well explained. This paper provides insight into the nonlinear permittivity of field grading composites, and will be helpful for further tuning the performance of field grading composites.

Hybrid MnO2/carbon nanotube-VN/carbon nanotube supercapacitors

NASA Astrophysics Data System (ADS)

Su, Y.; Zhitomirsky, I.

2014-12-01

Composite materials, containing fibrous VN nanoparticles and multiwalled carbon nanotubes (MWCNT) are prepared by a chemical method for application in electrochemical supercapacitors. We demonstrate for the first time that VN-MWCNT electrodes exhibit good capacitive behavior in 0.5 M Na2SO4 electrolyte in a negative voltage window of 0.9 V. Quartz crystal microbalance studies provide an insight into the mechanism of charge storage. Composite VN-MWCNT materials show significant improvement in capacitance, compared to individual VN and MWCNT materials. Testing results indicate that VN-MWCNT electrodes exhibit high specific capacitance at high mass loadings in the range of 10-30 mg cm-2, good capacitance retention at scan rates in the range of 2-200 mV s-1 and good cycling stability. The highest specific capacitance of 160 F g-1 is achieved at a scan rate of 2 mV s-1. The new findings open a new and promising strategy in the fabrication of hybrid devices based on VN. The proof-of-principle is demonstrated by the fabrication of hybrid supercapacitor devices based on VN-MWCNT negative electrodes and MnO2 -MWCNT positive electrodes with voltage window of 1.8 V in aqueous 0.5 M Na2SO4 electrolyte. The hybrid VN-MWCNT/MnO2-MWCNT supercapacitor cells show promising capacitive and power-energy characteristics.

On-line and real-time diagnosis method for proton membrane fuel cell (PEMFC) stack by the superposition principle

NASA Astrophysics Data System (ADS)

Lee, Young-Hyun; Kim, Jonghyeon; Yoo, Seungyeol

2016-09-01

The critical cell voltage drop in a stack can be followed by stack defect. A method of detecting defective cell is the cell voltage monitoring. The other methods are based on the nonlinear frequency response. In this paper, the superposition principle for the diagnosis of PEMFC stack is introduced. If critical cell voltage drops exist, the stack behaves as a nonlinear system. This nonlinearity can explicitly appear in the ohmic overpotential region of a voltage-current curve. To detect the critical cell voltage drop, a stack is excited by two input direct test-currents which have smaller amplitude than an operating stack current and have an equal distance value from the operating current. If the difference between one voltage excited by a test current and the voltage excited by a load current is not equal to the difference between the other voltage response and the voltage excited by the load current, the stack system acts as a nonlinear system. This means that there is a critical cell voltage drop. The deviation from the value zero of the difference reflects the grade of the system nonlinearity. A simulation model for the stack diagnosis is developed based on the SPP, and experimentally validated.

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

NASA Astrophysics Data System (ADS)

Gyanan; Mondal, Sandip; Kumar, Arvind

2016-12-01

Post-deposition annealing (PDA) is an inherent part of a sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. Annealing removes the oxygen vacancies and improves the structural order of the dielectric films. The process also reduces the interface related defects and improves the interfacial properties. Here, we applied a sol-gel spin-coating technique to prepare high-k TiO2 films on the p-Si substrate. These films were fired at 400 °C for the duration of 20, 40, 60 and 80 min to know the effects of annealing time on the device characteristics. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of annealed TiO2 films were examined in Al/TiO2/p-Si device configuration at room temperature. The 60 min annealed film gives the optimum performance and contained 69.5% anatase and 39.5% rutile phase with refractive index 2.40 at 550 nm. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. This allows us to tune the various electrical properties of MOS systems. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25 nm, respectively with a low leakage current density (3.13 × 10-7 A/cm2) fired for 80 min at -1 V. The current conduction mechanisms at high bias voltage were dominated by trap-charge limited current (TCLC), while at small voltages, space charge limited current (SCLC) was more prominent.

Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Haris, Norshakila; Kyabaggu, Peter B. K.; Rezazadeh, Ali A.

2017-05-01

This study focuses on the characterization of two 0.5 μm gate-length double heterojunction AlGaAs/InGaAs/GaAs pHEMTs using pre and post fabricated vertical oriented multilayer 3D monolithic microwave integrated (MMIC) circuit technology. The effects of the presence of 3D components above the active layer were accomplished by means of capacitance-voltage measurement, on-wafer DC and S-parameter measurements and two-tone intermodulation distortion measurement. The barrier height, donor concentration in the barrier layer, existing two-dimensional electron gas, output current, off and on state leakage, transconductance, cut-off frequency, small signal model parameters, gain, minimum noise figures and nonlinear distortion behavior reveals no significant performance degradation. Furthermore the fundamental device properties such as the depletion depth d, the sheet charge densities of the 2-DEG, n s, filed dependent mobility, μ, and the effective carrier velocity, v eff is not much affected due to multilayer processing. Less than 5% changes in magnitude of the device parameters are realized between the pre and post fabricated multilayer 3D MMIC technology. These effective comparisons of the both device are useful for future designs and optimizations of multilayer vertical stacked 3D MMICs.

Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

NASA Astrophysics Data System (ADS)

Kwok, H. L.

2015-12-01

Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq3). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (∼100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias.

Rapid kinetics of endocytosis at rod photoreceptor synapses depends upon endocytic load and calcium.

PubMed

Cork, Karlene M; Thoreson, Wallace B

2014-05-01

Release from rods is triggered by the opening of L-type Ca2+ channels that lie beneath synaptic ribbons. After exocytosis, vesicles are retrieved by compensatory endocytosis. Previous work showed that endocytosis is dynamin-dependent in rods but dynamin-independent in cones. We hypothesized that fast endocytosis in rods may also differ from cones in its dependence upon the amount of Ca2+ influx and/or endocytic load. We measured exocytosis and endocytosis from membrane capacitance (C m) changes evoked by depolarizing steps in voltage clamped rods from tiger salamander retinal slices. Similar to cones, the time constant for endocytosis in rods was quite fast, averaging <200 ms. We manipulated Ca2+ influx and the amount of vesicle release by altering the duration and voltage of depolarizing steps. Unlike cones, endocytosis kinetics in rods slowed after increasing Ca2+ channel activation with longer step durations or more strongly depolarized voltage steps. Endocytosis kinetics also slowed as Ca2+ buffering was decreased by replacing BAPTA (10 or 1 mM) with the slower Ca2+ buffer EGTA (5 or 0.5 mM) in the pipette solution. These data provide further evidence that endocytosis mechanisms differ in rods and cones and suggest that endocytosis in rods is regulated by both endocytic load and local Ca2+ levels.

Rapid kinetics of endocytosis at rod photoreceptor synapses depends upon endocytic load and calcium

PubMed Central

CORK, KARLENE M.; THORESON, WALLACE B.

2015-01-01

Release from rods is triggered by the opening of L-type Ca2+ channels that lie beneath synaptic ribbons. After exocytosis, vesicles are retrieved by compensatory endocytosis. Previous work showed that endocytosis is dynamin-dependent in rods but dynamin-independent in cones. We hypothesized that fast endocytosis in rods may also differ from cones in its dependence upon the amount of Ca2+ influx and/or endocytic load. We measured exocytosis and endocytosis from membrane capacitance (Cm) changes evoked by depolarizing steps in voltage clamped rods from tiger salamander retinal slices. Similar to cones, the time constant for endocytosis in rods was quite fast, averaging <200 ms. We manipulated Ca2+ influx and the amount of vesicle release by altering the duration and voltage of depolarizing steps. Unlike cones, endocytosis kinetics in rods slowed after increasing Ca2+ channel activation with longer step durations or more strongly depolarized voltage steps. Endocytosis kinetics also slowed as Ca2+ buffering was decreased by replacing BAPTA (10 or 1 mM) with the slower Ca2+ buffer EGTA (5 or 0.5 mM) in the pipette solution. These data provide further evidence that endocytosis mechanisms differ in rods and cones and suggest that endocytosis in rods is regulated by both endocytic load and local Ca2+ levels. PMID:24735554

Fluid simulation of the bias effect in inductive/capacitive discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yu-Ru; Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, Wilrijk, BE-2610 Antwerp; Gao, Fei

Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitivemore » discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.« less

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

PubMed

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Charge storage in β-FeSi2 nanoparticles

NASA Astrophysics Data System (ADS)

Theis, Jens; Bywalez, Robert; Küpper, Sebastian; Lorke, Axel; Wiggers, Hartmut

2015-02-01

We report on the observation of a surprisingly high specific capacitance of β-FeSi2 nanoparticle layers. Lateral, interdigitated capacitor structures were fabricated on thermally grown silicon dioxide and covered with β-FeSi2 particles by drop or spin casting. The β-FeSi2-nanoparticles, with crystallite sizes in the range of 10-30 nm, were fabricated by gas phase synthesis in a hot wall reactor. Compared to the bare electrodes, the nanoparticle-coated samples exhibit a 3-4 orders of magnitude increased capacitance. Time-resolved current voltage measurements show that for short times (seconds to minutes), the material is capable of storing up to 1 As/g at voltages of around 1 V. The devices are robust and exhibit long-term stability under ambient conditions. The specific capacitance is highest for a saturated relative humidity, while for a relative humidity below 40% the capacitance is almost indistinguishable from a nanoparticle-free reference sample. The devices work without the need of a fluid phase, the charge storing material is abundant and cost effective, and the sample design is easy to fabricate.

Environmentally friendly power generator based on moving liquid dielectric and double layer effect.

PubMed

Huynh, D H; Nguyen, T C; Nguyen, P D; Abeyrathne, C D; Hossain, Md S; Evans, R; Skafidas, E

2016-06-03

An electrostatic power generator converts mechanical energy to electrical energy by utilising the principle of variable capacitance. This change in capacitance is usually achieved by varying the gap or overlap between two parallel metallic plates. This paper proposes a novel electrostatic micro power generator where the change in capacitance is achieved by the movement of an aqueous solution of NaCl. A significant change in capacitance is achieved due to the higher than air dielectric constant of water and the Helmholtz double layer capacitor formed by ion separation at the electrode interfaces. The proposed device has significant advantages over traditional electrostatic devices which include low bias voltage and low mechanical frequency of operation. This is critical if the proposed device is to have utility in harvesting power from the environment. A figure of merit exceeding 10000(10(8)μW)/(mm(2)HzV(2)) which is two orders of magnitude greater than previous devices, is demonstrated for a prototype operating at a bias voltage of 1.2 V and a droplet frequency of 6 Hz. Concepts are presented for large scale power harvesting.

Examination of the temperature dependent electronic behavior of GeTe for switching applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Champlain, James G.; Ruppalt, Laura B.; Guyette, Andrew C.

2016-06-28

The DC and RF electronic behaviors of GeTe-based phase change material switches as a function of temperature, from 25 K to 375 K, have been examined. In its polycrystalline (ON) state, GeTe behaved as a degenerate p-type semiconductor, exhibiting metal-like temperature dependence in the DC regime. This was consistent with the polycrystalline (ON) state RF performance of the switch, which exhibited low resistance S-parameter characteristics. In its amorphous (OFF) state, the GeTe presented significantly greater DC resistance that varied considerably with bias and temperature. At low biases (<1 V) and temperatures (<200 K), the amorphous GeTe low-field resistance dramatically increased, resulting in exceptionally highmore » amorphous-polycrystalline (OFF-ON) resistance ratios, exceeding 10{sup 9} at cryogenic temperatures. At higher biases and temperatures, the amorphous GeTe exhibited nonlinear current-voltage characteristics that were best fit by a space-charge limited conduction model that incorporates the effect of a defect band. The observed conduction behavior suggests the presence of two regions of localized traps within the bandgap of the amorphous GeTe, located at approximately 0.26–0.27 eV and 0.56–0.57 eV from the valence band. Unlike the polycrystalline state, the high resistance DC behavior of amorphous GeTe does not translate to the RF switch performance; instead, a parasitic capacitance associated with the RF switch geometry dominates OFF state RF transmission.« less

Pinhole mediated electrical transport across LaTiO3/SrTiO3 and LaAlO3/SrTiO3 oxide hetero-structures

NASA Astrophysics Data System (ADS)

Kumar, Pramod; Dogra, Anjana; Toutam, Vijaykumar

2013-11-01

Metal-insulator-metal configuration of LaTiO3/SrTiO3 and LaAlO3/SrTiO3 hetero-structures between two dimensional electron gas formed at the interface and different area top electrodes is employed for Conductive Atomic force microscopy (CAFM) imaging, Current-Voltage (I-V), and Capacitance-Voltage (C-V) spectroscopy. Electrode area dependent I-V characteristics are observed for these oxide hetero-structures. With small area electrodes, rectifying I-V characteristics are observed, compared to, both tunneling and leakage current characteristics for large area electrodes. CAFM mapping confirmed the presence of pinholes on both surfaces. Resultant I-V characteristics have a contribution from both tunneling and leakage due to pinholes.

Design and Development of Non-Contact Bio-Potential Electrodes for Pervasive Health Monitoring Applications.

PubMed

Portelli, Anthony J; Nasuto, Slawomir J

2017-01-01

For the advent of pervasive bio-potential monitoring, it will be necessary to utilize a combination of cheap, quick to apply, low-noise electrodes and compact electronics with wireless technologies. Once available, all electrical activity resulting from the processes of the human body could be actively and constantly monitored without the need for cumbersome application and maintenance. This could significantly improve the early diagnosis of a range of different conditions in high-risk individuals, opening the possibility for new treatments and interventions as conditions develop. This paper presents the design and implementation of compact, non-contact capacitive bio-potential electrodes utilising a low impedance current-to-voltage configuration and a bootstrapped voltage follower, demonstrating results applicable to research applications for capacitive electrocardiography and capacitive electromyography. The presented electrodes use few components, have a small surface area and are capable of acquiring a range of bio-potential signals.

Electrical description of N2 capacitively coupled plasmas with the global model

NASA Astrophysics Data System (ADS)

Cao, Ming-Lu; Lu, Yi-Jia; Cheng, Jia; Ji, Lin-Hong; Engineering Design Team

2016-10-01

N2 discharges in a commercial capacitively coupled plasma reactor are modelled by a combination of an equivalent circuit and the global model, for a range of gas pressure at 1 4 Torr. The ohmic and inductive plasma bulk and the capacitive sheath are represented as LCR elements, with electrical characteristics determined by plasma parameters. The electron density and electron temperature are obtained from the global model in which a Maxwellian electron distribution is assumed. Voltages and currents are recorded by a VI probe installed after the match network. Using the measured voltage as an input, the current flowing through the discharge volume is calculated from the electrical model and shows excellent agreement with the measurements. The experimentally verified electrical model provides a simple and accurate description for the relationship between the external electrical parameters and the plasma properties, which can serve as a guideline for process window planning in industrial applications.

Design and Development of Non-Contact Bio-Potential Electrodes for Pervasive Health Monitoring Applications

PubMed Central

Portelli, Anthony J.; Nasuto, Slawomir J.

2017-01-01

For the advent of pervasive bio-potential monitoring, it will be necessary to utilize a combination of cheap, quick to apply, low-noise electrodes and compact electronics with wireless technologies. Once available, all electrical activity resulting from the processes of the human body could be actively and constantly monitored without the need for cumbersome application and maintenance. This could significantly improve the early diagnosis of a range of different conditions in high-risk individuals, opening the possibility for new treatments and interventions as conditions develop. This paper presents the design and implementation of compact, non-contact capacitive bio-potential electrodes utilising a low impedance current-to-voltage configuration and a bootstrapped voltage follower, demonstrating results applicable to research applications for capacitive electrocardiography and capacitive electromyography. The presented electrodes use few components, have a small surface area and are capable of acquiring a range of bio-potential signals. PMID:28045439

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Nonlinear behaviour of cantilevered carbon nanotube resonators based on a new nonlinear electrostatic load model

NASA Astrophysics Data System (ADS)

Farokhi, Hamed; Païdoussis, Michael P.; Misra, Arun K.

2018-04-01

The present study examines the nonlinear behaviour of a cantilevered carbon nanotube (CNT) resonator and its mass detection sensitivity, employing a new nonlinear electrostatic load model. More specifically, a 3D finite element model is developed in order to obtain the electrostatic load distribution on cantilevered CNT resonators. A new nonlinear electrostatic load model is then proposed accounting for the end effects due to finite length. Additionally, a new nonlinear size-dependent continuum model is developed for the cantilevered CNT resonator, employing the modified couple stress theory (to account for size-effects) together with the Kelvin-Voigt model (to account for nonlinear damping); the size-dependent model takes into account all sources of nonlinearity, i.e. geometrical and inertial nonlinearities as well as nonlinearities associated with damping, small-scale, and electrostatic load. The nonlinear equation of motion of the cantilevered CNT resonator is obtained based on the new models developed for the CNT resonator and the electrostatic load. The Galerkin method is then applied to the nonlinear equation of motion, resulting in a set of nonlinear ordinary differential equations, consisting of geometrical, inertial, electrical, damping, and size-dependent nonlinear terms. This high-dimensional nonlinear discretized model is solved numerically utilizing the pseudo-arclength continuation technique. The nonlinear static and dynamic responses of the system are examined for various cases, investigating the effect of DC and AC voltages, length-scale parameter, nonlinear damping, and electrostatic load. Moreover, the mass detection sensitivity of the system is examined for possible application of the CNT resonator as a nanosensor.

Frequency dispersion analysis of thin dielectric MOS capacitor in a five-element model

NASA Astrophysics Data System (ADS)

Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Yu, Tao; Li, Xiangping; Cheng, Yi; Xing, Guichao; Zhang, Daming; Luo, Xixian; Chen, Baojiu

2018-02-01

An Al/ZrO2/IL/n-Si (IL: interface layer) MOS capacitor has been fabricated by metal organic decomposition of ZrO2 and thermal deposition Al. We have measured parallel capacitance (C m) and parallel resistance (R m) versus bias voltage curves (C m, R m-V) at different AC signal frequency (f), and C m, R m-f curves at different bias voltage. The curves of C m, R m-f measurements show obvious frequency dispersion in the range of 100 kHz-2 MHz. The energy band profile shows that a large voltage is applied on the ZrO2 layer and IL at accumulation, which suggests possible dielectric polarization processes by some traps in ZrO2 and IL. C m, R m-f data are used for frequency dispersion analysis. To exclude external frequency dispersion, we have extracted the parameters of C (real MOS capacitance), R p (parallel resistance), C IL (IL capacitance), R IL (IL resistance) and R s (Si resistance) in a five-element model by using a three-frequency method. We have analyzed intrinsic frequency dispersion of C, R p, C IL, R IL and R s by studying the dielectric characteristics and Si surface layer characteristics. At accumulation, the dispersion of C and R p is attributed to dielectric polarization such as dipolar orientation and oxide traps. The serious dispersion of C IL and R IL are relative to other dielectric polarization, such as border traps and fixed oxide traps. The dispersion of R s is mainly attributed to contact capacitance (C c) and contact resistance (R c). At depletion and inversion, the frequency dispersion of C, R p, C IL, R IL, and R s are mainly attributed to the depletion layer capacitance (C D). The interface trap capacitance (C it) and interface trap resistance (R it) are not dominant for the dispersion of C, R p, C IL, R IL, and R s.

Regulation of a lightweight high efficiency capacitator diode voltage multiplier dc-dc converter

NASA Technical Reports Server (NTRS)

Harrigill, W. T., Jr.; Myers, I. T.

1976-01-01

A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.

A method for computing ion energy distributions for multifrequency capacitive discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Alan C. F.; Lieberman, M. A.; Verboncoeur, J. P.

2007-03-01

The ion energy distribution (IED) at a surface is an important parameter for processing in multiple radio frequency driven capacitive discharges. An analytical model is developed for the IED in a low pressure discharge based on a linear transfer function that relates the time-varying sheath voltage to the time-varying ion energy response at the surface. This model is in good agreement with particle-in-cell simulations over a wide range of single, dual, and triple frequency driven capacitive discharge excitations.

Cross-Talk Limits of Highly Segmented Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Pullia, Alberto; Weisshaar, Dirk; Zocca, Francesca; Bazzacco, Dino

2011-06-01

Cross-talk limits of monolithic highly-segmented semiconductor detectors for high-resolution X-gamma spectrometry are investigated. Cross-talk causes false signal components yielding amplitude losses and fold-dependent shifts of the spectral lines, which partially spoil the spectroscopic performance of the detector. Two complementary electrical models are developed, which describe quantitatively the inter-channel cross-talk of monolithic segmented detectors whose electrodes are read out by charge-sensitive preamplifiers. The first is here designated as Cross-Capacitance (CC) model, the second as Split-Charge (SC) model. The CC model builds around the parasitic capacitances Cij linking the preamplifier outputs and the neighbor channel inputs. The SC model builds around the finite-value of the decoupling capacitance CC used to read out the high-voltage detector electrode. The key parameters of the models are individuated and ideas are shown to minimize their impact. Using a quasi-coaxial germanium segmented detector it is found that the SC cross-talk becomes negligible for decoupling capacitances larger than 1 nF, where instead the CC cross-talk tends to dominate. The residual cross-talk may be reduced by minimization of stray capacitances Cij, through a careful design of the layout of the Printed Circuit Board (PCB) where the input transistors are mounted. Cij can be made as low as 5 fF, but it is shown that even in such case the impact of the CC cross-talk on the detector performance is not negligible. Finally, an algorithm for cross-talk correction is presented and elaborated.

Delocalized periodic vibrations in nonlinear LC and LCR electrical chains

NASA Astrophysics Data System (ADS)

Chechin, G. M.; Shcherbinin, S. A.

2015-05-01

We consider electrical LC- and LCR-chains consisting of N cells. In the LC-chain each cell contains a linear inductor L and a nonlinear capacitor C, while the cell in the LCR-chain include additionally a resistor R and an voltage source. It is assumed that voltage dependence of capacitors represents an even function. Such capacitors have implemented by some experimental groups studying propagation of electrical signals in the lines constructed on MOS and CMOS substrates. In these chains, we study dynamical regimes representing nonlinear normal modes (NNMs) by Rosenberg. We prove that maximum possible number of symmetry-determined NNMs which can be excited in the considered chains is equal to 5. The stability of these modes for different N is studied with the aid of the group-theoretical method [Physical Review E 73 (2006) 36216] which allows to simplify radically the variational systems appearing in the Floquet stability analysis. For NNMs in LC-chain, the scaling of the voltage stability threshold in the thermodynamic limit (N → ∞) is determined. It is shown that the above group theoretical method can be also used for studying stability of NNMs in the LCR-chains.

Design and Comparison of Cascaded H-Bridge, Modular Multilevel Converter, and 5-L Active Neutral Point Clamped Topologies for Motor Drive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marzoughi, Alinaghi; Burgos, Rolando; Boroyevich, Dushan

This paper presents the design procedure and comparison of converters currently used in medium-voltage high-power motor drive applications. For this purpose, the cascaded H-bridge (CHB), modular multilevel converter (MMC), and five-level active neutral point clamped (5-L ANPC) topologies are targeted. The design is performed using 1.7-kV insulated gate bipolar transistors (IGBTs) for CHB and MMC converters, and utilizing 3.3- and 4.5-kV IGBTs for 5-L ANPC topology as normally done in industry. The comparison is done between the designed converter topologies at three different voltage levels (4.16, 6.9, and 13.8 kV, with only the first two voltage levels in case ofmore » the 5-L ANPC) and two different power levels (3 and 5 MVA), in order to elucidate the dependence of different parameters on voltage and power rating. Finally, the comparison is done from several points of view such as efficiency, capacitive energy storage, semiconductor utilization, parts count (for measure of reliability), and power density.« less

Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Kim, Hogyoung; Kim, Min Soo; Yoon, Seung Yu; Choi, Byung Joon

2017-02-01

We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

Mechanisms of the anomalous Pockels effect in bulk water

NASA Astrophysics Data System (ADS)

Yukita, Shunpei; Suzuki, Yuto; Shiokawa, Naoyuki; Kobayashi, Takayoshi; Tokunaga, Eiji

2018-04-01

The "anomalous" Pockels effect is a phenomenon that a light beam passing between two electrodes in an aqueous electrolyte solution is deflected by an AC voltage applied between the electrodes: the deflection angle is proportional to the voltage such that the incident beam alternately changes its direction. This phenomenon, the Pockels effect in bulk water, apparently contradicts what is believed in nonlinear optics, i.e., macroscopic inversion symmetry should be broken for the second-order nonlinear optical effect to occur such as the first-order electro-optic effect, i.e., the Pockels effect. To clarify the underlying mechanism, the dependence of the effect on the electrode material is investigated to find that the Pockels coefficient with Pt electrodes is two orders of magnitude smaller than with indium tin oxide (ITO) electrodes. It is experimentally confirmed that the Pockels effect of interfacial water in the electric double layer (EDL) on these electrodes shows an electrode dependence similar to the effect in bulk water while the effects depend on the frequency of the AC voltage such that the interfacial signal decreases with frequency but the bulk signal increases with frequency up to 221 Hz. These experimental results lead to a conclusion that the beam deflection is caused by the refractive index gradient in the bulk water region, which is formed transiently by the Pockels effect of interfacial water in the EDL when an AC electric field is applied. The refractive index gradient is caused by the diffuse layer spreading into the bulk region to work as a breaking factor of inversion symmetry of bulk water due to its charge-biased ionic distribution. This mechanism does not contradict the principle of nonlinear optics.

Characterization and modeling of electrostatically actuated polysilicon micromechanical devices

NASA Astrophysics Data System (ADS)

Chan, Edward Keat Leem

Sensors, actuators, transducers, microsystems and MEMS (MicroElertroMechanical Systems) are some of the terms describing technologies that interface information processing systems with the physical world. Electrostatically actuated micromechanical devices are important building blocks in many of these technologies. Arrays of these devices are used in video projection displays, fluid pumping systems, optical communications systems, tunable lasers and microwave circuits. Well-calibrated simulation tools are essential for propelling ideas from the drawing board into production. This work characterizes a fabrication process---the widely-used polysilicon MUMPs process---to facilitate the design of electrostatically actuated micromechanical devices. The operating principles of a representative device---a capacitive microwave switch---are characterized using a wide range of electrical and optical measurements of test structures along with detailed electromechanical simulations. Consistency in the extraction of material properties from measurements of both pull-in voltage and buckling amplitude is demonstrated. Gold is identified as an area-dependent source of nonuniformity in polysilicon thicknesses and stress. Effects of stress gradients, substrate curvature, and film coverage are examined quantitatively. Using well-characterized beams as in-situ surface probes, capacitance-voltage and surface profile measurements reveal that compressible surface residue modifies the effective electrical gap when the movable electrode contacts an underlying silicon nitride layer. A compressible contact surface model used in simulations improves the fit to measurements. In addition, the electric field across the nitride causes charge to build up in the nitride, increasing the measured capacitance over time. The rate of charging corresponds to charge injection through direct tunneling. A novel actuator that can travel stably beyond one-third of the initial gap (a trademark limitation of conventional actuators) is demonstrated. A "folded capacitor" design, requiring only minimal modifications to the layout of conventional devices, reduces the parasitic capacitances and modes of deformation that limit performance. This device, useful for optical applications, can travel almost twice the conventional range before succumbing to a tilting instability.

Equilibrium charge fluctuations of a charge detector and its effect on a nearby quantum dot

NASA Astrophysics Data System (ADS)

Ruiz-Tijerina, David; Vernek, Edson; Ulloa, Sergio

2014-03-01

We study the Kondo state of a spin-1/2 quantum dot (QD), in close proximity to a quantum point contact (QPC) charge detector near the conductance regime of the 0.7 anomaly. The electrostatic coupling between the QD and QPC introduces a remote gate on the QD level, which varies with the QPC gate voltage. Furthermore, models for the 0.7 anomaly [Y. Meir et al., PRL 89,196802(2002)] suggest that the QPC lodges a Kondo-screened level with charge-correlated hybridization, which may be also affected by capacitive coupling to the QD, giving rise to a competition between the two Kondo ground states. We model the QD-QPC system as two capacitively-coupled Kondo impurities, and explore the zero-bias transport of both the QD and the QPC for different local gate voltages and coupling strengths, using the numerical renormalization group and variational methods. We find that the capacitive coupling produces a remote gating effect, non-monotonic in the gate voltages, which reduces the gate voltage window for Kondo screening in either impurity, and which can also drive a quantum phase transition out of the Kondo regime. Our study is carried out for intermediate coupling strengths, and as such is highly relevant to experiments; particularly, to recent studies of decoherence effects on QDs. Supported by MWN/CIAM and NSF PIRE.

Ultrahigh surface area meso/microporous carbon formed with self-template for high-voltage aqueous supercapacitors

NASA Astrophysics Data System (ADS)

Yang, Jie; Hu, Jiangtao; Zhu, Min; Zhao, Yan; Chen, Haibiao; Pan, Feng

2017-10-01

A new hierarchically porous carbon has been synthesized with self-template of silica phase from a commercial silicone resin by pyrolysis and subsequent NaOH activation. The obtained carbon materials achieve an ultrahigh specific surface area (2896 m2 g-1) with abundant mesopores. The C800 sample demonstrates excellent performance in supercapacitors, with a high capacitance of 322 F g-1 at 0.5 A g-1 and outstanding rate capability (182 F g-1 at 100 A g-1) in a three-electrode system using 6.0 mol L-1 KOH electrolyte. The energy density is improved by widening the voltage window using 1.0 mol L-1 alkali metal nitrate solutions (LiNO3, NaNO3, KNO3) in which the strong solvation of alkali metal cations and nitrate anions effectively reduce the activity of water. In a symmetric supercapacitor, the maximum operating voltage is essentially restricted by the potential of positive electrode and the total capacitance is dominated by the capacitance of the anion at the positive electrode. The symmetric supercapacitors based on C800 deliver a high energy density of 22.4 Wh kg-1 at a power density of 0.23 kW kg-1 in 1.0 mol L-1 LiNO3 with a voltage of 1.8 V and long-term stability with a retention of 89.87% after 10000 cycles.

Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line

PubMed Central

Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

2015-01-01

A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid. PMID:26729119

Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

PubMed

Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

2015-12-30

A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

Electrical switching and oscillations in vanadium dioxide

NASA Astrophysics Data System (ADS)

Pergament, Alexander; Velichko, Andrey; Belyaev, Maksim; Putrolaynen, Vadim

2018-05-01

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10 × 10 nm, Fmax can reach the value of 300 MHz at a film thickness of 20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts 13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1-5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

A linkage analysis toolkit for studying allosteric networks in ion channels

PubMed Central

2013-01-01

A thermodynamic approach to studying allosterically regulated ion channels such as the large-conductance voltage- and Ca2+-dependent (BK) channel is presented, drawing from principles originally introduced to describe linkage phenomena in hemoglobin. In this paper, linkage between a principal channel component and secondary elements is derived from a four-state thermodynamic cycle. One set of parallel legs in the cycle describes the “work function,” or the free energy required to activate the principal component. The second are “lever operations” activating linked elements. The experimental embodiment of this linkage cycle is a plot of work function versus secondary force, whose asymptotes are a function of the parameters (displacements and interaction energies) of an allosteric network. Two essential work functions play a role in evaluating data from voltage-clamp experiments. The first is the conductance Hill energy WH[g], which is a “local” work function for pore activation, and is defined as kT times the Hill transform of the conductance (G-V) curve. The second is the electrical capacitance energy WC[q], representing “global” gating charge displacement, and is equal to the product of total gating charge per channel times the first moment (VM) of normalized capacitance (slope of Q-V curve). Plots of WH[g] and WC[q] versus voltage and Ca2+ potential can be used to measure thermodynamic parameters in a model-independent fashion of the core gating constituents (pore, voltage-sensor, and Ca2+-binding domain) of BK channel. The method is easily generalized for use in studying other allosterically regulated ion channels. The feasibility of performing linkage analysis from patch-clamp data were explored by simulating gating and ionic currents of a 17-particle model BK channel in response to a slow voltage ramp, which yielded interaction energies deviating from their given values in the range of 1.3 to 7.2%. PMID:23250867

Surface potentials measure ion concentrations near lipid bilayers during rapid solution changes.

PubMed Central

Laver, D R; Curtis, B A

1996-01-01

We describe a puffing method for changing solutions near one surface of lipid bilayers that allows simultaneous measurement of channel activity and extent of solution change at the bilayer surface. Ion adsorption to the lipid headgroups and screening of the bilayer surface charge by mobile ions provided a convenient probe for the ionic composition of the solution at the bilayer surface. Rapid ionic changes induced a shift in bilayer surface potential that generated a capacitive transient current under voltage-clamp conditions. This depended on the ion species and bilayer composition and was accurately described by the Stern-Gouy-Chapman theory. The time course of solute concentrations during solution changes could also be modeled by an exponential exchange of bath and puffing solutions with time constants ranging from 20 to 110 ms depending on the flow pressure. During changes in [Cs+] and [Ca2+] (applied separately or together) both the mixing model and capacitive currents predicted [Cs+] and [Ca2+] transients consistent with those determined experimentally from: 1) the known Cs(+)-dependent conductance of open ryanodine receptor channels and 2) the Ca(2+)-dependent gating of ryanodine receptor Ca2+ channels from cardiac and skeletal muscle. Images FIGURE 1 FIGURE 4 FIGURE 5 FIGURE 8 PMID:8842210

Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Badrinezhad, Lida; Bilkan, Çigdem; Azizian-Kalandaragh, Yashar; Nematollahzadeh, Ali; Orak, Ikram; Altindal, Şemsettin

2018-01-01

Cross-linked polyvinyl alcohol (PVA) graphene oxide (GO) nanocomposites were prepared by simple solution-mixing route and characterized by Raman, UV-visible and fourier transform infrared (FT-IR) spectroscopy analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The XRD pattern and SEM analysis showed significant changes in the nanocomposite structures, and the FT-IR spectroscopy results confirmed the chemical interaction between the GO filler and the PVA matrix. After these morphological characterizations, PVA-GO-based diodes were fabricated and their electrical properties were characterized using current-voltage (I-V) and impedance-voltage-frequency (Z-V-f) measurements at room temperature. Semilogarithmic I-V characteristics of diode showed a good rectifier behavior. The values of C and G/ω increased with decreasing frequency due to the surface/interface states (Nss) which depend on the relaxation time and the frequency of the signal. The voltage, dependent profiles of Nss and series resistance (Rs) were obtained from the methods of high-low frequency capacitance and Nicollian and Brews, respectively. The obtained values of Nss and Rs were attributed to the use of cross-linked PVA-GO interlayer at the Au/n-Si interface.

Ion acceleration in a helicon source due to the self-bias effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiebold, Matt; Sung, Yung-Ta; Scharer, John E.

2012-05-15

Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p{sub n} < 1 mTorr) expanding argon plasmas in the Madison Helicon eXperiment (MadHeX). The potential gradient leads to ion acceleration greater than that predicted by ambipolar expansion, exceeding E{sub i} Almost-Equal-To 7 kT{sub e} in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a sweptmore » emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V{sub p-p} Greater-Than-Or-Equivalent-To 140V, V{sub p-p}/V{sub p} Almost-Equal-To 150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to 'neutralize' the accelerated ion population, resulting in a zero net time-averaged current through the acceleration region when an insulating upstream boundary condition is enforced. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate.« less

Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

NASA Astrophysics Data System (ADS)

Kötz, R.; Ruch, P. W.; Cericola, D.

Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 °C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 °C).

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

NASA Astrophysics Data System (ADS)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed,more » possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.« less

Impact of magnetite nanoparticle incorporation on optical and electrical properties of nanocomposite LbL assemblies.

PubMed

Yashchenok, Alexey M; Gorin, Dmitry A; Badylevich, Mikhail; Serdobintsev, Alexey A; Bedard, Matthieu; Fedorenko, Yanina G; Khomutov, Gennady B; Grigoriev, Dmitri O; Möhwald, Helmuth

2010-09-21

Optical and electrical properties of polyelectrolyte/iron oxide nanocomposite planar films on silicon substrates were investigated for different amount of iron oxide nanoparticles incorporated in the films. The nanocomposite assemblies prepared by the layer-by-layer assembly technique were characterized by ellipsometry, atomic force microscopy, and secondary ion mass-spectrometry. Absorption spectra of the films reveal a shift of the optical absorption edge to higher energy when the number of deposited layers decreases. Capacitance-voltage and current-voltage measurements were applied to study the electrical properties of metal-oxide-semiconductor structures prepared by thermal evaporation of gold electrodes on nanocomposite films. The capacitance-voltage measurements show that the dielectric constant of the film increases with the number of deposited layers and the fixed charge and the trapped charge densities have a negative sign.

A nonlinear electrostatic potential change in the T-system of skeletal muscle detected under passive recording conditions using potentiometric dyes

PubMed Central

1990-01-01

Voltage-sensing dyes were used to examine the electrical behavior of the T-system under passive recording conditions similar to those commonly used to detect charge movement. These conditions are designed to eliminate all ionic currents and render the T-system potential linear with respect to the command potential applied at the surface membrane. However, we found an unexpected nonlinearity in the relationship between the dye signal from the T-system and the applied clamp potential. An additional voltage- and time-dependent optical signal appears over the same depolarizing range of potentials where change movement and mechanical activation occur. This nonlinearity is not associated with unblocked ionic currents and cannot be attributed to lack of voltage clamp control of the T-system, which appears to be good under these conditions. We propose that a local electrostatic potential change occurs in the T-system upon depolarization. An electrostatic potential would not be expected to extend beyond molecular distances of the membrane and therefore would be sensed by a charged dye in the membrane but not by the voltage clamp, which responds solely to the potential of the bulk solution. Results obtained with different dyes suggest that the location of the phenomena giving rise to the extra absorbance change is either intramembrane or at the inner surface of the T-system membrane. PMID:2299329

Resonant snubber inverter

DOEpatents

Lai, Jih-Sheng; Young, Sr., Robert W.; Chen, Daoshen; Scudiere, Matthew B.; Ott, Jr., George W.; White, Clifford P.; McKeever, John W.

1997-01-01

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Resonant snubber inverter

DOEpatents

Lai, J.S.; Young, R.W. Sr.; Chen, D.; Scudiere, M.B.; Ott, G.W. Jr.; White, C.P.; McKeever, J.W.

1997-06-24

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 14 figs.

Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors.

PubMed

Jang, Mi; Park, Ji Hoon; Im, Seongil; Kim, Se Hyun; Yang, Hoichang

2014-01-15

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2) ), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm(2) V(-1) s(-1) , Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Alternate charging and discharging of capacitor to enhance the electron production of bioelectrochemical systems.

PubMed

Liang, Peng; Wu, Wenlong; Wei, Jincheng; Yuan, Lulu; Xia, Xue; Huang, Xia

2011-08-01

A bioelectrochemical system (BES) can be operated in both "microbial fuel cell" (MFC) and "microbial electrolysis cell" (MEC) modes, in which power is delivered and invested respectively. To enhance the electric current production, a BES was operated in MFC mode first and a capacitor was used to collect power from the system. Then the charged capacitor discharged electrons to the system itself, switching into MEC mode. This alternate charging and discharging (ACD) mode helped the system produce 22-32% higher average current compared to an intermittent charging (IC) mode, in which the capacitor was first charged from an MFC and then discharged to a resistor, at 21.6 Ω external resistance, 3.3 F capacitance and 300 mV charging voltage. The effects of external resistance, capacitance and charging voltage on average current were studied. The average current reduced as the external resistance and charging voltage increased and was slightly affected by the capacitance. Acquisition of higher average current in the ACD mode was attributed to the shorter discharging time compared to the charging time, as well as a higher anode potential caused by discharging the capacitor. Results from circuit analysis and quantitatively calculation were consistent with the experimental observations.

Oxidation of ammonium sulfite by a multi-needle-to-plate gas phase pulsed corona discharge reactor

NASA Astrophysics Data System (ADS)

Ren, Hua; Lu, Na; Shang, Kefeng; Li, Jie; Wu, Yan

2013-03-01

The oxidation of ammonium sulfite in the ammonia-based flue gas desulfurization (FGD) process was investigated in a multi-needle-to-plate gas phase pulsed corona discharge reactor in this paper. The effect of several parameters, including capacitance and peak pulse voltage of discharge system, electrode gap and bubbling gas flow rate on the oxidation rate of ammonium sulfite was reviewed. The oxidation rate of ammonium sulfite could reach 47.2% at the capacitance, the peak pulse voltage, electrode gap and bubbling gas flow rate equal to 2 nF, -24.6 k V, 35 mm and 4 L min-1 within treatment time of 40 min The experimental results indicate that the gas phase pulsed discharge system with a multi-needle-to-plate electrode can oxide the ammonium sulfite. The oxidation rate increased with the applied capacitance and peak pulse voltage and decreased with the electrode gap. As the bubbling gas flow rate increased, the oxidation rate increased first and then tended to reach a stationary value. These results would be important for the process optimization of the (NH4)2SO3 to (NH4)2SO4 oxidation.

Temperature-dependent Schottky barrier in high-performance organic solar cells

PubMed Central

Li, Hui; He, Dan; Zhou, Qing; Mao, Peng; Cao, Jiamin; Ding, Liming; Wang, Jizheng

2017-01-01

Organic solar cells (OSCs) have attracted great attention in the past 30 years, and the power conversion efficiency (PCE) now reaches around 10%, largely owning to the rapid material developments. Meanwhile with the progress in the device performance, more and more interests are turning to understanding the fundamental physics inside the OSCs. In the conventional bulk-heterojunction architecture, only recently it is realized that the blend/cathode Schottky junction serves as the fundamental diode for the photovoltaic function. However, few researches have focused on such junctions, and their physical properties are far from being well-understood. In this paper based on PThBDTP:PC71BM blend, we fabricated OSCs with PCE exceeding 10%, and investigated temperature-dependent behaviors of the junction diodes by various characterization including current-voltage, capacitance-voltage and impedance measurements between 70 to 290 K. We found the Schottky barrier height exhibits large inhomogeneity, which can be described by two sets of Gaussian distributions. PMID:28071700

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Willander, M.; Wahab, Q.

2012-04-01

Interface states density (NSS) distribution is extracted in Au/ ZnO Schottky diodes. Nanorods of ZnO are grown on silver (Ag) using aqueous chemical growth (ACG) technique. Well aligned hexagonal-shaped vertical nanorods of a mean diameter of 300 - 450 nm and 1.3 -1.9 μm high are revealed in SEM. Gold (Au) Schottky contacts of thickness 60 nm and 1.5mm diameter were evaporated. For electrical characterization of Schottky diodes current-voltage (I-V) and capacitance-Voltage (C-V) measurements are performed. The diodes exhibited a typical non-linear rectifying behavior with a barrier height of 0.62eV and ideality factor of 4.3. Possible reasons for low barrier height and high ideality factor have been addressed. Series resistance (RS) has been calculated from forward I-V characteristics using Chueng's function. The density of interfacial states (NSS) below the conduction band (EC-ESS) is extracted using I-V and C-V measured values. A decrease in interface states density (NSS) is observed from 3.74 × 1011 - 7.98 × 1010 eV-1 cm-2 from 0.30eV - 0.61eV below the conduction band edge.

Subthreshold voltage noise of rat neocortical pyramidal neurones

PubMed Central

Jacobson, Gilad A; Diba, Kamran; Yaron-Jakoubovitch, Anat; Oz, Yasmin; Koch, Christof; Segev, Idan; Yarom, Yosef

2005-01-01

Neurones are noisy elements. Noise arises from both intrinsic and extrinsic sources, and manifests itself as fluctuations in the membrane potential. These fluctuations limit the accuracy of a neurone's output but have also been suggested to play a computational role. We present a detailed study of the amplitude and spectrum of voltage noise recorded at the soma of layer IV–V pyramidal neurones in slices taken from rat neocortex. The dependence of the noise on holding potential, synaptic activity and Na+ conductance is systematically analysed. We demonstrate that voltage noise increases non-linearly as the cell depolarizes (from a standard deviation (s.d.) of 0.19 mV at −75 mV to an s.d. of 0.54 mV at −55 mV). The increase in voltage noise is accompanied by an increase in the cell impedance, due to voltage dependence of Na+ conductance. The impedance increase accounts for the majority (70%) of the voltage noise increase. The increase in voltage noise and impedance is restricted to the low-frequency range (0.2–2 Hz). At the high frequency range (5–100 Hz) the voltage noise is dominated by synaptic activity. In our slice preparation, synaptic noise has little effect on the cell impedance. A minimal model reproduces qualitatively these data. Our results imply that ion channel noise contributes significantly to membrane voltage fluctuations at the subthreshold voltage range, and that Na+ conductance plays a key role in determining the amplitude of this noise by acting as a voltage-dependent amplifier of low-frequency transients. PMID:15695244

Photovoltaic Pixels for Neural Stimulation: Circuit Models and Performance.

PubMed

Boinagrov, David; Lei, Xin; Goetz, Georges; Kamins, Theodore I; Mathieson, Keith; Galambos, Ludwig; Harris, James S; Palanker, Daniel

2016-02-01

Photovoltaic conversion of pulsed light into pulsed electric current enables optically-activated neural stimulation with miniature wireless implants. In photovoltaic retinal prostheses, patterns of near-infrared light projected from video goggles onto subretinal arrays of photovoltaic pixels are converted into patterns of current to stimulate the inner retinal neurons. We describe a model of these devices and evaluate the performance of photovoltaic circuits, including the electrode-electrolyte interface. Characteristics of the electrodes measured in saline with various voltages, pulse durations, and polarities were modeled as voltage-dependent capacitances and Faradaic resistances. The resulting mathematical model of the circuit yielded dynamics of the electric current generated by the photovoltaic pixels illuminated by pulsed light. Voltages measured in saline with a pipette electrode above the pixel closely matched results of the model. Using the circuit model, our pixel design was optimized for maximum charge injection under various lighting conditions and for different stimulation thresholds. To speed discharge of the electrodes between the pulses of light, a shunt resistor was introduced and optimized for high frequency stimulation.

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

NASA Astrophysics Data System (ADS)

Sometani, Mitsuru; Okamoto, Dai; Harada, Shinsuke; Ishimori, Hitoshi; Takasu, Shinji; Hatakeyama, Tetsuo; Takei, Manabu; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

2015-01-01

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO2/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO2/4H-SiC interface. On the basis of Arrhenius plots of the PF current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO2 films on the Si-face of 4H-SiC.

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sometani, Mitsuru; Takei, Manabu; Fuji Electric Co. Ltd., 1 Fuji-machi, Hino, 191-8502 Tokyo

The conduction mechanism of the leakage current of a thermally grown oxide on 4H silicon carbide (4H-SiC) was investigated. The dominant carriers of the leakage current were found to be electrons by the carrier-separation current-voltage method. The current-voltage and capacitance-voltage characteristics, which were measured over a wide temperature range, revealed that the leakage current in SiO{sub 2}/4H-SiC on the Si-face can be explained as the sum of the Fowler-Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage currents. A rigorous FN analysis provided the true barrier height for the SiO{sub 2}/4H-SiC interface. On the basis of Arrhenius plots of the PFmore » current separated from the total leakage current, the existence of carbon-related defects and/or oxygen vacancy defects was suggested in thermally grown SiO{sub 2} films on the Si-face of 4H-SiC.« less

Applications of Non-linearities in RF MEMS Switches and Resonators

NASA Astrophysics Data System (ADS)

Vummidi Murali, Krishna Prasad

The 21st century is emerging into an era of wireless ubiquity. To support this trend, the RF (Radio Frequency) front end must be capable of processing a range of wireless signals (cellular phone, data connectivity, broadcast TV, GPS positioning, etc.) spanning a total bandwidth of nearly 6 GHz. This warrants the need for multi-band/multi-mode radio architectures. For such architectures to satisfy the constraints on size, battery life, functionality and cost, the radio front-end must be made reconfigurable. RF-MEMS (RF Micro-Electro-Mechanical Systems) are seen as an enabling technology for such reconfigurable radios. RF-MEMS mainly include micromechanical switches (used in phase shifters, switched capacitor banks, impedance tuners etc.) and micromechanical resonators (used in tunable filters, oscillators, reference clocks etc.). MEMS technology also has the potential to be directly integrated into CMOS (Complementary metal-oxide semiconductor) ICs (Integrated Circuits) leading to further potential reductions of cost and size. However, RF-MEMS face challenges that must be addressed before they can gain widespread commercial acceptance. Relatively low switching speed, power handling, and high-voltage drive are some of the key issues in MEMS switches. Phase noise influenced by non-linearities, need for temperature compensation (especially Si based resonators), large start-up times, and aging are the key issues in Si MEMS Resonators. In this work potential solutions are proposed to address some of these key issues, specifically the reduction of high voltage drives in switches and the reduction of phase noise in MEMS resonators for timing applications. MEMS devices that are electrostatically actuated exhibit significant non-linearities. The origins of the non-linearities are both electrical (electrostatic actuation) and mechanical (dimensions and material properties). The influence of spring non-linearities (cubic and quadratic) on the performance of switches and resonators are studied. Gold electroplated fixed-fixed beams were fabricated to test the phenomenon of dynamic (or resonant) pull-in in shunt switches. The dynamic pull-in phenomenon was also tested on commercially fabricated lateral switches. It is shown that the resonant pull-in technique reduces the overall voltage required to actuate the switch. There is an additional reduction of total actuation voltage possible via applying an AC actuation signal at the correct non-linear resonant frequency. The demonstrated best case savings from operating at the non-linear resonance is 50% (for the lateral switch) and 60% (for the vertical switch) as compared to 25% and 40% respectively using a fixed frequency approach. However, the timing response for resonant pull-in has been experimentally shown to be slower than the static actuation. To reduce the switching time, a shifted-frequency method is proposed where the excitation frequency is shifted up or down by a discrete amount deltaO after a brief hold time. It was theoretically shown that the shifted-frequency method enables a minimum realizable switching time comparable to the static switching time for a given set of actuation frequencies. The influence of VDC on the effective non-linearities of a fixed-fixed beam is also studied. Based on the dimensions of the resonator and the type of resonance there is a certain VDC,Lin where the response is near linear (S ≈ 0). In the near-linear domain, the dynamic pull-in is the only upper bound to the amplitude of vibrations, and hence the amplitude of output current, thereby maximizing the power handling capacity of the resonator. Apart from maximizing the output current, it is essential to reduce the amplitude and phase variations of the displacement response which are due to noise mixing into frequency of interest, and are eventually manifested as output phase noise due to capacitive current nonlinearity. Two major aliasing schemes were analyzed and it was shown that the capacitive force non-linearity is the major source of mixing that causes the up-conversion of 1/f frequency into signal sidebands. The resonator's periodic response (displacement) is defined by a set of two first-order nonlinear ordinary differential equations that describe the modulation of amplitude and phase of the response. Frequency response curves of amplitude and frequency are determined from these modulation equations. The zero slope point on the amplitude resonance curve is the peak of the resonance curve where the phase (gammadc) of the response is +/-pi/2. For a strongly non-linear system, the resonance curves are skewed based on the amount of total non-linearity S. For systems that are strongly non-linear, the best region to operate the resonator is the fixed point that correspond to infinite slope (gammadc = +/-2pi/3) in the frequency response of the system. The best case phase noise response was analytically developed for such a fixed point. Theoretically at this fixed point, phase noise will have contributions only from 1/ fnoise and not from 1/f2 and 1/ f3. The resonators phase can be set by controlling the rest of the phase in the loop such that the total phase around the loop is zero or 2pi. In addition, this work has also developed an analytical model for a lateral MEMS switch fabricated in a commercial foundry that has the potential to be processed as MEMS on CMOS. This model accounts for trapezoidal cross sections of the electrodes and springs and also models electrostatic fringing as a function of the moving gap. The analytical model matches closely with the Finite Element (FEA) model.

Aviation Maintenance Technology. General. G105 Aviation Electricity and Electronics. Instructor Material.

ERIC Educational Resources Information Center

Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

These instructor materials for an aviation maintenance technology course contain five instructional modules. The modules cover the following topics: determining the relationship of voltage, current, resistance, and power in electrical circuits; computing and measuring capacitance and inductance; measuring voltage, current, resistance, and…

High-voltage pulse generator developed for wide-gap spark chambers

NASA Technical Reports Server (NTRS)

Keller, L. P.; Walschon, E. G.

1968-01-01

Low-inductance, high-capacitance Marx pulse generator provides for minimization of internal inductance and suppression of external electromagnetic radiation. The spark gaps of the generator are enclosed in a pressurized nitrogen atmosphere which allows the charging voltage to be varied by changing the nitrogen pressure.

A system for measuring thermal activation energy levels in silicon by thermally stimulated capacitance

NASA Technical Reports Server (NTRS)

Cockrum, R. H.

1982-01-01

One method being used to determine energy level(s) and electrical activity of impurities in silicon is described. The method is called capacitance transient spectroscopy (CTS). It can be classified into three basic categories: the thermally stimulated capacitance method, the voltage-stimulated capacitance method, and the light-stimulated capacitance method; the first two categories are discussed. From the total change in capacitance and the time constant of the capacitance response, emission rates, energy levels, and trap concentrations can be determined. A major advantage of using CTS is its ability to detect the presence of electrically active impurities that are invisible to other techniques, such as Zeeman effect atomic absorption, and the ability to detect more than one electrically active impurity in a sample. Examples of detection of majority and minority carrier traps from gold donor and acceptor centers in silicon using the capacitance transient spectrometer are given to illustrate the method and its sensitivity.

Self-Nulling Lock-in Detection Electronics for Capacitance Probe Electrometer

NASA Technical Reports Server (NTRS)

Blaes, Brent R.; Schaefer, Rembrandt T.

2012-01-01

A multi-channel electrometer voltmeter that employs self-nulling lock-in detection electronics in conjunction with a mechanical resonator with noncontact voltage sensing electrodes has been developed for space-based measurement of an Internal Electrostatic Discharge Monitor (IESDM). The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. Use of an AC-coupled lock-in amplifier with closed-loop sense-signal nulling via generation of an active guard-driving feedback voltage provides the resolution, accuracy, linearity and stability needed for long-term space-based measurement of the IESDM. This implementation relies on adjusting the feedback voltage to drive the sense current received from the resonator s variable-capacitance-probe voltage transducer to approximately zero, as limited by the signal-to-noise performance of the loop electronics. The magnitude of the sense current is proportional to the difference between the input voltage being measured and the feedback voltage, which matches the input voltage when the sense current is zero. High signal-to-noise-ratio (SNR) is achieved by synchronous detection of the sense signal using the correlated reference signal derived from the oscillator circuit that drives the mechanical resonator. The magnitude of the feedback voltage, while the loop is in a settled state with essentially zero sense current, is an accurate estimate of the input voltage being measured. This technique has many beneficial attributes including immunity to drift, high linearity, high SNR from synchronous detection of a single-frequency carrier selected to avoid potentially noisy 1/f low-frequency spectrum of the signal-chain electronics, and high accuracy provided through the benefits of a driven shield encasing the capacitance- probe transducer and guarded input triaxial lead-in. Measurements obtained from a 2- channel prototype electrometer have demonstrated good accuracy (|error| < 0.2 V) and high stability. Twenty-four-hour tests have been performed with virtually no drift. Additionally, 5,500 repeated one-second measurements of 100 V input were shown to be approximately normally distributed with a standard deviation of 140 mV.

Rise time of voltage pulses in NbN superconducting single photon detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smirnov, K. V.; CJSC “Superconducting Nanotechnology”; National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics, 34 Tallinskaya St., 109028 Moscow

2016-08-01

We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector R{sub n}, which appears after photon absorption, on its kinetic inductance L{sub k} and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

A method for measuring the nonlinear response in dielectric spectroscopy through third harmonics detection.

PubMed

Thibierge, C; L'Hôte, D; Ladieu, F; Tourbot, R

2008-10-01

We present a high sensitivity method allowing the measurement of the nonlinear dielectric susceptibility of an insulating material at finite frequency. It has been developed for the study of dynamic heterogeneities in supercooled liquids using dielectric spectroscopy at frequencies 0.05 Hz < or = f < or = 3x10(4) Hz. It relies on the measurement of the third harmonics component of the current flowing out of a capacitor. We first show that standard laboratory electronics (amplifiers and voltage sources) nonlinearities lead to limits on the third harmonics measurements that preclude reaching the level needed by our physical goal, a ratio of the third harmonics to the fundamental signal about 10(-7). We show that reaching such a sensitivity needs a method able to get rid of the nonlinear contributions both of the measuring device (lock-in amplifier) and of the excitation voltage source. A bridge using two sources fulfills only the first of these two requirements, but allows to measure the nonlinearities of the sources. Our final method is based on a bridge with two plane capacitors characterized by different dielectric layer thicknesses. It gets rid of the source and amplifier nonlinearities because in spite of a strong frequency dependence of the capacitor impedance, it is equilibrated at any frequency. We present the first measurements of the physical nonlinear response using our method. Two extensions of the method are suggested.

SDRE control strategy applied to a nonlinear robotic including drive motor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lima, Jeferson J. de, E-mail: jefersonjl82@gmail.com, E-mail: tusset@utfpr.edu.br, E-mail: fcjanzen@utfpr.edu.br, E-mail: piccirillo@utfpr.edu.br, E-mail: claudinor@utfpr.edu.br; Tusset, Angelo M., E-mail: jefersonjl82@gmail.com, E-mail: tusset@utfpr.edu.br, E-mail: fcjanzen@utfpr.edu.br, E-mail: piccirillo@utfpr.edu.br, E-mail: claudinor@utfpr.edu.br; Janzen, Frederic C., E-mail: jefersonjl82@gmail.com, E-mail: tusset@utfpr.edu.br, E-mail: fcjanzen@utfpr.edu.br, E-mail: piccirillo@utfpr.edu.br, E-mail: claudinor@utfpr.edu.br

A robotic control design considering all the inherent nonlinearities of the robot-engine configuration is developed. The interactions between the robot and joint motor drive mechanism are considered. The proposed control combines two strategies, one feedforward control in order to maintain the system in the desired coordinate, and feedback control system to take the system into a desired coordinate. The feedback control is obtained using State-Dependent Riccati Equation (SDRE). For link positioning two cases are considered. Case I: For control positioning, it is only used motor voltage; Case II: For control positioning, it is used both motor voltage and torque betweenmore » the links. Simulation results, including parametric uncertainties in control shows the feasibility of the proposed control for the considered system.« less

Ions beams and ferroelectric plasma sources

NASA Astrophysics Data System (ADS)

Stepanov, Anton

Near-perfect space-charge neutralization is required for the transverse compression of high perveance ion beams for ion-beam-driven warm dense matter experiments, such as the Neutralized Drift Compression eXperiment (NDCX). Neutralization can be accomplished by introducing a plasma in the beam path, which provides free electrons that compensate the positive space charge of the ion beam. In this thesis, charge neutralization of a 40 keV, perveance-dominated Ar+ beam by a Ferroelectric Plasma Source (FEPS) is investigated. First, the parameters of the ion beam, such as divergence due to the extraction optics, charge neutralization fraction, and emittance were measured. The ion beam was propagated through the FEPS plasma, and the effects of charge neutralization were inferred from time-resolved measurements of the transverse beam profile. In addition, the dependence of FEPS plasma parameters on the configuration of the driving pulser circuit was studied to optimize pulser design. An ion accelerator was constructed that produced a 30-50 keV Ar + beam with pulse duration <300 mus and dimensionless perveance Q up to 8 x 10-4. Transverse profile measurements 33 cm downstream of the ion source showed that the dependence of beam radius on Q was consistent with space charge expansion. It was concluded that the beam was perveance-dominated with a charge neutralization fraction of approximately zero in the absence of neutralizing plasma. Since beam expansion occurred primarily due to space charge, the decrease in effective perveance due to neutralization by FEPS plasma can be inferred from the reduction in beam radius. Results on propagation of the ion beam through FEPS plasma demonstrate that after the FEPS is triggered, the beam radius decreases to its neutralized value in about 5 mus. The duration of neutralization was about 10 mus at a charging voltage VFEPS = 5.5 kV and 35 mus at VFEPS = 6.5 kV. With VFEPS = 6.5 kV, the transverse current density profile 33 cm downstream of the source had a Gaussian shape with xrms =5 mm, which corresponds to a half-angle divergence of 0.87°. The measurements show that near-perfect charge neutralization with FEPS can be attained. No loss of ion beam current was detected, indicating the absence of a neutral cloud in the region of beam propagation, which would cause beam loss to charge exchange collisions. This provides evidence in favor of using FEPS in a future Heavy Ion Fusion accelerator. The FEPS discharge was investigated based on current-voltage measurements in the pulser circuit. Different values of series resistance and storage capacitance in the pulser circuit were used. The charged particle current emitted by the FEPS into vacuum was measured from the difference in forward and return currents in the driving circuit. It was found that FEPS is an emitter of negative charge, and that electron current emission begins approximately 0.5 mus after the fast-rising high voltage pulse is applied and lasts for tens of mus. The value of the series resistance in the pulser circuit was varied to change the rise time of the voltage pulse; plasma density was expected to decrease with increasing values of resistance. However, the data showed that changing the resistance had no significant effect. The average charge emitted per shot depends strongly on the value of the storage capacitance. Lowering the capacitance from 141 nF to 47 nF resulted in a near-complete shut-off of charge emission, although the amplitude of the applied voltage pulse was as high, and rise time as short, as when high-density plasma was produced. Increasing the capacitance from 141 nF to 235 nF increased the average charge emitted per shot by a factor of 2.

Modeling and Simulation of Linear and Nonlinear MEMS Scale Electromagnetic Energy Harvesters for Random Vibration Environments

PubMed Central

Sassani, Farrokh

2014-01-01

The simulation results for electromagnetic energy harvesters (EMEHs) under broad band stationary Gaussian random excitations indicate the importance of both a high transformation factor and a high mechanical quality factor to achieve favourable mean power, mean square load voltage, and output spectral density. The optimum load is different for random vibrations and for sinusoidal vibration. Reducing the total damping ratio under band-limited random excitation yields a higher mean square load voltage. Reduced bandwidth resulting from decreased mechanical damping can be compensated by increasing the electrical damping (transformation factor) leading to a higher mean square load voltage and power. Nonlinear EMEHs with a Duffing spring and with linear plus cubic damping are modeled using the method of statistical linearization. These nonlinear EMEHs exhibit approximately linear behaviour under low levels of broadband stationary Gaussian random vibration; however, at higher levels of such excitation the central (resonant) frequency of the spectral density of the output voltage shifts due to the increased nonlinear stiffness and the bandwidth broadens slightly. Nonlinear EMEHs exhibit lower maximum output voltage and central frequency of the spectral density with nonlinear damping compared to linear damping. Stronger nonlinear damping yields broader bandwidths at stable resonant frequency. PMID:24605063

Advances in imaging and quantification of electrical properties at the nanoscale using Scanning Microwave Impedance Microscopy (sMIM)

NASA Astrophysics Data System (ADS)

Friedman, Stuart; Stanke, Fred; Yang, Yongliang; Amster, Oskar

Scanning Microwave Impedance Microscopy (sMIM) is a mode for Atomic Force Microscopy (AFM) enabling imaging of unique contrast mechanisms and measurement of local permittivity and conductivity at the 10's of nm length scale. sMIM has been applied to a variety of systems including nanotubes, nanowires, 2D materials, photovoltaics and semiconductor devices. Early results were largely semi-quantitative. This talk will focus on techniques for extracting quantitative physical parameters such as permittivity, conductivity, doping concentrations and thin film properties from sMIM data. Particular attention will be paid to non-linear materials where sMIM has been used to acquire nano-scale capacitance-voltage curves. These curves can be used to identify the dopant type (n vs p) and doping level in doped semiconductors, both bulk samples and devices. Supported in part by DOE-SBIR DE-SC0009856.

Layered memristive and memcapacitive switches for printable electronics

NASA Astrophysics Data System (ADS)

Bessonov, Alexander A.; Kirikova, Marina N.; Petukhov, Dmitrii I.; Allen, Mark; Ryhänen, Tapani; Bailey, Marc J. A.

2015-02-01

Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices. Here, we demonstrate that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 102 to 108 Ω combined with low programming voltages of 0.1-0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (<3 nm) oxide layer. With strong nonlinearity in switching dynamics, different mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

Real Time Measures of Prestin Charge and Fluorescence during Plasma Membrane Trafficking Reveal Sub-Tetrameric Activity

PubMed Central

Bian, Shumin; Navaratnam, Dhasakumar; Santos-Sacchi, Joseph

2013-01-01

Prestin (SLC26a5) is the outer hair cell integral membrane motor protein that drives cochlear amplification, and has been described as an obligate tetramer. We studied in real time the delivery of YFP-prestin to the plasma membrane of cells from a tetracycline-inducible cell line. Following the release of temperature block to reinstate trans Golgi network delivery of the integral membrane protein, we measured nonlinear capacitance (NLC) and membrane fluorescence during voltage clamp. Prestin was delivered exponentially to the plasma membrane with a time constant of less than 10 minutes, with both electrical and fluorescence methods showing high temporal correlation. However, based on disparity between estimates of prestin density derived from either fluorescence or NLC, we conclude that sub-tetrameric forms of prestin contribute to our electrical and fluorescence measures. Thus, in agreement with previous observations we find that functional prestin is not an obligate tetramer. PMID:23762468

Experiments with a Varicap

ERIC Educational Resources Information Center

Kraftmakher, Yaakov

2011-01-01

The capacitance versus voltage relationship (the "C-V" characteristic) of a varicap is determined, and the device is used for tuning an "LC" circuit and for building a voltage-controlled oscillator. With a data-acquisition system, the "C-V" characteristic can be demonstrated in a short time. The necessary equipment includes a function generator,…

Lumped transmission line avalanche pulser

DOEpatents

Booth, R.

1995-07-18

A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse. 8 figs.

Lumped transmission line avalanche pulser

DOEpatents

Booth, Rex

1995-01-01

A lumped linear avalanche transistor pulse generator utilizes stacked transistors in parallel within a stage and couples a plurality of said stages, in series with increasing zener diode limited voltages per stage and decreasing balanced capacitance load per stage to yield a high voltage, high and constant current, very short pulse.

ELECTRICAL CIRCUITS USING COLD-CATHODE TRIODE VALVES

DOEpatents

Goulding, F.S.

1957-11-26

An electrical circuit which may be utilized as a pulse generator or voltage stabilizer is presented. The circuit employs a cold-cathode triode valve arranged to oscillate between its on and off stages by the use of selected resistance-capacitance time constant components in the plate and trigger grid circuits. The magnitude of the d-c voltage applied to the trigger grid circuit effectively controls the repetition rate of the output pulses. In the voltage stabilizer arrangement the d-c control voltage is a portion of the supply voltage and the rectified output voltage is substantially constant.

Growth and interface properties of Au Schottky contact on ZnO grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Asghar, M.; Mahmood, K.; Malik, Faisal; Hasan, M. A.

2013-06-01

In this paper, we have discussed the growth of ZnO by molecular beam epitaxy (MBE) and interface properties of Au Schottky contacts on grown sample. After the verification of structure and surface properties by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM), respectively, Au metal contact was fabricated by e-beam evaporation to study contact properties. The high value of ideality factor (2.15) and barrier height (0.61 eV) at room temperature obtained by current-voltage (I-V) characteristics suggested the presence of interface states between metal and semiconductor. To confirm this observation we carried out frequency dependent capacitance-voltage (C-V) and conductance-voltage (G-V) demonstrated that the capacitance of diode decreased with increasing frequency. The reason of this behavior is related with density of interface states, series resistance and image force lowering. The C-2-V plot drawn to calculate the carrier concentration and barrier height with values 1.4×1016 cm-3 and 0.92 eV respectively. Again, high value of barrier height obtained from C-V as compared to the value obtained from I-V measurements revealed the presence of interface states. The density of these interface states (Dit) was calculated by well known Hill-Coleman method. The calculated value of Dit at 1 MHz frequency was 2×1012 eV-1 cm-2. The plot between interface states and frequency was also drawn which demonstrated that density of interface states had inverse proportion with measuring frequency.

Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

NASA Astrophysics Data System (ADS)

Zhang, Zhe; Andersen, Michael A. E.

2015-04-01

Dielectric electro active polymer (DEAP) can be used in actuation, sensing and energy harvesting applications, but driving the DEAP based actuators and generators has three main challenges from a power electronics standpoint, i.e. high voltage (around 2.5 kV), nonlinearity, and capacitive behavior. In this paper, electronics divers for heating valves, loud speakers, incremental motors, and energy harvesting are reviewed, studied and developed in accordance with their corresponding specifications. Due to the simplicity and low power capacity (below 10W), the reversible Fly-back converters with both magnetic and piezoelectric transformers are employed for the heating valve and incremental motor application, where only ON/OFF regulation is adopted for energy saving; as for DEAP based energy harvesting, the noisolated Buck/Boost converter is used, due to the system high power capacity (above 100W), but the voltage balancing across the series-connected high voltage IGBTs is a critical issue and accordingly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi-level Buck converter based Class-D amplifier, because of its high control linearity, is implemented for the loud speaker applications. A synthesis among those converter topologies and control techniques is given; therefore, for those DEAP based applications, their diversity and similarity of electronics drivers, as well as the key technologies employed are analyzed. Therefore a whole picture of how to choose the proper topologies can be revealed. Finally, the design guidelines in order to achieve high efficiency and reliability are discussed.

Hydrothermal Barium Titanate Thin-Film Characteristics and their Suitability as Decoupling Capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raj, P. Markondeya; Lee, Baik-Woo; Kang, Nam-Kee

System integration and miniaturization demands are driving integrated thin film capacitor technologies towards ultrahigh capacitance densities for noise-free power supply, power conversion and efficient power management. Hydrothermal route can deposit crystalline ferroelectric films at low temperatures of less than 150 C. It is hence an attractive route for integrating high permittivity thin film capacitors on organic, silicon or flex substrates. However, hydrothermal films are not commercialized so far because of their inferior insulation characteristics. Embedded hydroxyl groups are attributed to be the cause for high leakage currents, temperature dependent properties and lower Breakdown Voltages (BDVs). This paper discusses the dielectricmore » characteristics such as capacitance density, leakage currents and Temperature Coefficient of Capacitance (TCC) of hydrothermal barium titanate films and correlates them to the embedded water and OH groups, film morphology, stoichiometry and crystallinity. With thermal treatment, majority of the OH groups can be removed leading to improved insulation characteristics. The room temperature I-V characteristics agreed with ionic conduction models for films baked at 160 C while higher baking temperatures of above 300 C resulted in Poole-Frenkel type conduction. A brief perspective is provided on the suitability of hydrothermal thin film capacitors for power supply applications.« less

FAST TRACK COMMUNICATION High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Xia, D. X.; Xu, J. B.

2010-11-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm2 V-1 s-1 and 2.1 cm2 V-1 s-1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1984-02-24

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, Pavel; Gatti, Emilio

1987-01-01

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1987-08-18

A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric

NASA Astrophysics Data System (ADS)

Zhang, Kexiong; Liao, Meiyong; Imura, Masataka; Nabatame, Toshihide; Ohi, Akihiko; Sumiya, Masatomo; Koide, Yasuo; Sang, Liwen

2016-12-01

The electrical hysteresis in current-voltage (I-V) and capacitance-voltage characteristics was observed in an atomic-layer-deposited Al2O3/p-GaN metal-oxide-semiconductor capacitor (PMOSCAP). The absolute minimum leakage currents of the PMOSCAP for forward and backward I-V scans occurred not at 0 V but at -4.4 and +4.4 V, respectively. A negative flat-band voltage shift of 5.5 V was acquired with a capacitance step from +4.4 to +6.1 V during the forward scan. Mg surface accumulation on p-GaN was demonstrated to induce an Mg-Ga-Al-O oxidized layer with a trap density on the order of 1013 cm-2. The electrical hysteresis is attributed to the hole trapping and detrapping process in the traps of the Mg-Ga-Al-O layer via the Poole-Frenkel mechanism.

LaF3 insulators for MIS structures

NASA Technical Reports Server (NTRS)

Sher, A.; Tsuo, Y. H.; Moriarty, J. A.; Miller, W. E.; Crouch, R. K.; Seiber, B. A.

1979-01-01

Thin films of LaF3 deposited on Si or GaAs substrates have been observed to form blocking contacts with very high capacitances. This results in comparatively hysteresis-free and sharp C-V (capacitance-voltage) characteristics for MIS structures. Such structures have been used to study the interface states of GaAs with increased resolution and to construct improved photocapacitive infrared detectors.

Electrochemical capacitance modulation in an interacting mesoscopic capacitor induced by internal charge transfer

NASA Astrophysics Data System (ADS)

Liu, Wei; He, Jianhong; Guo, Huazhong; Gao, Jie

2018-04-01

We report experiments on the dynamic response of an interacting mesoscopic capacitor consisting of a quantum dot with two confined spin-split levels of the lowest Landau level. In high magnetic fields, states inside the dot are regulated by a mixture of Coulomb interaction and Landau-level quantization, and electrons distribute on two spatially separated regions. Quantum point contact voltage and magnetic field are employed to manipulate the number and distribution of electrons inside the quantum dot. We find that the periodicity of the electrochemical capacitance oscillations is dominated by the charging energy, and their amplitudes, due to internal charge transfer and strong internal capacitive coupling, show rich variations of modulations. Magnetocapacitance displays a sawtoothlike manner and may differ in tooth directions for different voltages, which, we demonstrate, result from a sawtoothlike electrochemical potential change induced by internal charge transfer and field-sensitive electrostatic potential. We further build a charge stability diagram, which, together with all other capacitance properties, is consistently interpreted in terms of a double-dot model. The demonstrated technique is of interest as a tool for fast and sensitive charge state readout of a double-quantum-dot qubit in the gigahertz frequency quantum electronics.

Environmentally friendly power generator based on moving liquid dielectric and double layer effect

PubMed Central

Huynh, D. H.; Nguyen, T. C.; Nguyen, P. D.; Abeyrathne, C. D.; Hossain, Md. S.; Evans, R.; Skafidas, E.

2016-01-01

An electrostatic power generator converts mechanical energy to electrical energy by utilising the principle of variable capacitance. This change in capacitance is usually achieved by varying the gap or overlap between two parallel metallic plates. This paper proposes a novel electrostatic micro power generator where the change in capacitance is achieved by the movement of an aqueous solution of NaCl. A significant change in capacitance is achieved due to the higher than air dielectric constant of water and the Helmholtz double layer capacitor formed by ion separation at the electrode interfaces. The proposed device has significant advantages over traditional electrostatic devices which include low bias voltage and low mechanical frequency of operation. This is critical if the proposed device is to have utility in harvesting power from the environment. A figure of merit exceeding 10000(108μW)/(mm2HzV2) which is two orders of magnitude greater than previous devices, is demonstrated for a prototype operating at a bias voltage of 1.2 V and a droplet frequency of 6 Hz. Concepts are presented for large scale power harvesting. PMID:27255577

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

PubMed

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

Dynamic characteristics of organic bulk-heterojunction solar cells

NASA Astrophysics Data System (ADS)

Babenko, S. D.; Balakai, A. A.; Moskvin, Yu. L.; Simbirtseva, G. V.; Troshin, P. A.

2010-12-01

Transient characteristics of organic bulk-heterojunction solar cells have been studied using pulsed laser probing. An analysis of the photoresponse waveforms of a typical solar cell measured by varying load resistance within broad range at different values of the bias voltage provided detailed information on the photocell parameters that characterize electron-transport properties of active layers. It is established that the charge carrier mobility is sufficient to ensure high values of the fill factor (˜0.6) in the obtained photocells. On approaching the no-load voltage, the differential capacitance of the photocell exhibits a sixfold increase as compared to the geometric capacitance. A possible mechanism of recombination losses in the active medium is proposed.

Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

PubMed

Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

2015-12-01

This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of < 115 ppm/V2 and a low leakage current density of 4.457 x 10(-11) A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.

Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, VFG; Xie, HK

2014-07-01

This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/mu m(2), maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficientsmore » of capacitance below 21.2 ppm/V and 2.31 ppm/V-2. The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m Omega was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.« less

A multi-channel capacitive probe for electrostatic fluctuation measurement in the Madison Symmetric Torus reversed field pinch.

PubMed

Tan, Mingsheng; Stone, Douglas R; Triana, Joseph C; Almagri, Abdulgader F; Fiksel, Gennady; Ding, Weixing; Sarff, John S; McCollam, Karsten J; Li, Hong; Liu, Wandong

2017-02-01

A 40-channel capacitive probe has been developed to measure the electrostatic fluctuations associated with the tearing modes deep into Madison Symmetric Torus (MST) reversed field pinch plasma. The capacitive probe measures the ac component of the plasma potential via the voltage induced on stainless steel electrodes capacitively coupled with the plasma through a thin annular layer of boron nitride (BN) dielectric (also serves as the particle shield). When bombarded by the plasma electrons, BN provides a sufficiently large secondary electron emission for the induced voltage to be very close to the plasma potential. The probe consists of four stalks each with ten cylindrical capacitors that are radially separated by 1.5 cm. The four stalks are arranged on a 1.3 cm square grid so that at each radial position, there are four electrodes forming a square grid. Every two adjacent radial sets of four electrodes form a cube. The fluctuating electric field can be calculated by the gradient of the plasma potential fluctuations at the eight corners of the cube. The probe can be inserted up to 15 cm (r/a = 0.7) into the plasma. The capacitive probe has a frequency bandwidth from 13 Hz to 100 kHz, amplifier-circuit limit, sufficient for studying the tearing modes (5-30 kHz) in the MST reversed-field pinch.

Functional Carbon Materials for Electrochemical Energy Storage

NASA Astrophysics Data System (ADS)

Zhou, Huihui

The ability to harvest and convert solar energy has been associated with the evolution of human civilization. The increasing consumption of fossil fuels since the industrial revolution, however, has brought to concerns in ecological deterioration and depletion of the fossil fuels. Facing these challenges, humankind is forced to seek for clean, sustainable and renewable energy resources, such as biofuels, hydraulic power, wind power, geothermal energy and other kinds of alternative energies. However, most alternative energy sources, generally in the form of electrical energy, could not be made available on a continuous basis. It is, therefore, essential to store such energy into chemical energy, which are portable and various applications. In this context, electrochemical energy-storage devices hold great promises towards this goal. The most common electrochemical energy-storage devices are electrochemical capacitors (ECs, also called supercapacitors) and batteries. In comparison to batteries, ECs posses high power density, high efficiency, long cycling life and low cost. ECs commonly utilize carbon as both (symmetric) or one of the electrodes (asymmetric), of which their performance is generally limited by the capacitance of the carbon electrodes. Therefore, developing better carbon materials with high energy density has been emerging as one the most essential challenges in the field. The primary objective of this dissertation is to design and synthesize functional carbon materials with high energy density at both aqueous and organic electrolyte systems. The energy density (E) of ECs are governed by E = CV 2/2, where C is the total capacitance and V is the voltage of the devices. Carbon electrodes with high capacitance and high working voltage should lead to high energy density. In the first part of this thesis, a new class of nanoporous carbons were synthesized for symmetric supercapacitors using aqueous Li2SO4 as the electrolyte. A unique precursor was adopted to create uniformly distributed nanopores with large surface area, leading to high-performance electrodes with high capacitance, excellent rate performance and stable cycling, even under a high working voltage of 1.6V. The second part of this dissertation work further improved the capacitance of the carbon electrodes by fluorine doping. This doping process enhances the affinity of the carbon surface with organic electrolytes, leading to further improved capacitance and energy density. In the third part, carbon materials were synthesized with high surface area, capacitance and working voltage of 4V in organic electrolyte, leading to the construction of prototyped devices with energy density comparable to those of the current lead-acid batteries. Besides the abovementioned research, hierarchical graphitic carbons were also explored for lithium ion batteries and supercapacitors. Overall, through rational design of carbons with optimized pore configuration and surface chemistry, carbon electrodes with improved energy density and rate performance were improved significantly. Collectively, this thesis work systematically unveils simple yet effective strategies to achieve high performance carbon-based supercapacitors with high power density and high energy density, including the following aspects: 1) Constructed electrodes with high capacitance through building favorable ion/electron transportation pathways, tuning pore structure and pore size. 2) Improved the capacitance through enhancing the affinity between the carbon electrodes and electrolytes by doping the carbons with heteroatoms. 3) Explored and understand the roles of heteroatom doping in the capacitive behavior by both experimental measurement and computational modeling. 4) Improved energy density of carbon electrodes by enlarging their working voltage in aqueous and organic electrolyte. 5) Scalable and effective production of hierarchically porous graphite particles through aerosol process for use as the anode materials of lithium ion batteries. These strategies can be extended as a general design platform for other high-performance energy storage materials such as fuel cells and lithium-ion batteries.

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

Series asymmetric supercapacitors based on free-standing inner-connection electrodes for high energy density and high output voltage.

PubMed

Tao, Jiayou; Liu, Nishuang; Rao, Jiangyu; Ding, Longwei; Al Bahrani, Majid Raissan; Li, Luying; Su, Jun; Gao, Yihua

2014-12-21

Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO(2) nanowire/carbon nanotube (CNT) composites and MoO(3) nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm(-3) at a scan rate of 2 mV s(-1) and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm(-3) at a power density of 261.4 mW cm(-3), and exhibits excellent cycling performance of 99.6% capacitance retention over 10,000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage.

Fuzzy control of battery chargers

NASA Astrophysics Data System (ADS)

Aldridge, Jack

1996-03-01

The increasing reliance on battery power for portable terrestrial purposes, such as portable tools, portable computers, and telecommunications, provides motivation to optimize the battery charging process with respect to speed of charging and charging cycle lifetime of the battery. Fuzzy control, implemented on a small microcomputer, optimizes charging in the presence of nonlinear effects and large uncertainty in the voltage vs. charge state characteristics for the battery. Use of a small microcontroller makes possible a small, capable, and affordable package for the charger. Microcontroller-based chargers provide improved performance by adjusting both charging voltage and charging current during the entire charging process depending on a current estimate of the state of charge of the battery. The estimate is derived from the zero-current voltage of the battery and the temperature and their rates of change. All of these quantities are uncertain due to the variation in condition between the individual cells in a battery, the rapid and nonlinear dependence of the fundamental electrochemistry on the internal temperature, and the placement of a single temperature sensor within the battery package. While monitoring the individual cell voltages and temperatures would be desirable, cost and complexity considerations preclude the practice. NASA has developed considerable technology in batteries for supplying significant amounts of power for spacecraft and in fuzzy control techniques for the space applications. In this paper, we describe how we are using both technologies to build an optimal charger prototype as a precursor to a commercial version.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovchavtsev, A. P., E-mail: kap@isp.nsc.ru; Tsarenko, A. V.; Guzev, A. A.

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thicknessmore » from capacitance-voltage measurements.« less

Analysis of Pull-In Instability of Geometrically Nonlinear Microbeam Using Radial Basis Artificial Neural Network Based on Couple Stress Theory

PubMed Central

Heidari, Mohammad; Heidari, Ali; Homaei, Hadi

2014-01-01

The static pull-in instability of beam-type microelectromechanical systems (MEMS) is theoretically investigated. Two engineering cases including cantilever and double cantilever microbeam are considered. Considering the midplane stretching as the source of the nonlinearity in the beam behavior, a nonlinear size-dependent Euler-Bernoulli beam model is used based on a modified couple stress theory, capable of capturing the size effect. By selecting a range of geometric parameters such as beam lengths, width, thickness, gaps, and size effect, we identify the static pull-in instability voltage. A MAPLE package is employed to solve the nonlinear differential governing equations to obtain the static pull-in instability voltage of microbeams. Radial basis function artificial neural network with two functions has been used for modeling the static pull-in instability of microcantilever beam. The network has four inputs of length, width, gap, and the ratio of height to scale parameter of beam as the independent process variables, and the output is static pull-in voltage of microbeam. Numerical data, employed for training the network, and capabilities of the model have been verified in predicting the pull-in instability behavior. The output obtained from neural network model is compared with numerical results, and the amount of relative error has been calculated. Based on this verification error, it is shown that the radial basis function of neural network has the average error of 4.55% in predicting pull-in voltage of cantilever microbeam. Further analysis of pull-in instability of beam under different input conditions has been investigated and comparison results of modeling with numerical considerations shows a good agreement, which also proves the feasibility and effectiveness of the adopted approach. The results reveal significant influences of size effect and geometric parameters on the static pull-in instability voltage of MEMS. PMID:24860602

Discharge processes and an electrical model of atmospheric pressure plasma jets in argon

NASA Astrophysics Data System (ADS)

Fang, Zhi; Shao, Tao; Yang, Jing; Zhang, Cheng

2016-01-01

In this paper, an atmospheric pressure plasma discharge in argon was generated using a needle-to-ring electrode configuration driven by a sinusoidal excitation voltage. The electric discharge processes and discharge characteristics were investigated by inspecting the voltage-current waveforms, Lissajous curves and lighting emission images. The change in discharge mode with applied voltage amplitude was studied and characterised, and three modes of corona discharge, dielectric barrier discharge (DBD) and jet discharge were identified, which appeared in turn with increasing applied voltage and can be distinguished clearly from the measured voltage-current waveforms, light-emission images and the changing gradient of discharge power with applied voltage. Based on the experimental results and discharge mechanism analysis, an equivalent electrical model and the corresponding equivalent circuit for characterising the whole discharge processes accurately was proposed, and the three discharge stages were characterised separately. A voltage-controlled current source (VCCS) associated with a resistance and a capacitance were used to represent the DBD stage, and the plasma plume and corona discharge were modelled by a variable capacitor in series with a variable resistor. Other factors that can influence the discharge, such as lead and stray capacitance values of the circuit, were also considered in the proposed model. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

NASA Astrophysics Data System (ADS)

Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

2018-01-01

The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

Fabrication and Characterization of CMOS-MEMS Magnetic Microsensors

PubMed Central

Hsieh, Chen-Hsuan; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

This study investigates the design and fabrication of magnetic microsensors using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process. The magnetic sensor is composed of springs and interdigitated electrodes, and it is actuated by the Lorentz force. The finite element method (FEM) software CoventorWare is adopted to simulate the displacement and capacitance of the magnetic sensor. A post-CMOS process is utilized to release the suspended structure. The post-process uses an anisotropic dry etching to etch the silicon dioxide layer and an isotropic dry etching to remove the silicon substrate. When a magnetic field is applied to the magnetic sensor, it generates a change in capacitance. A sensing circuit is employed to convert the capacitance variation of the sensor into the output voltage. The experimental results show that the output voltage of the magnetic microsensor varies from 0.05 to 1.94 V in the magnetic field range of 5–200 mT. PMID:24172287

Opening of K+ channels by capacitive stimulation from silicon chip

NASA Astrophysics Data System (ADS)

Ulbrich, M. H.; Fromherz, P.

2005-10-01

The development of stable neuroelectronic systems requires a stimulation of nerve cells from semiconductor devices without electrochemical effects at the electrolyte/solid interface and without damage of the cell membrane. The interaction must rely on a reversible opening of voltage-gated ion channels by capacitive coupling. In a proof-of-principle experiment, we demonstrate that Kv1.3 potassium channels expressed in HEK293 cells can be opened from an electrolyte/oxide/silicon (EOS) capacitor. A sufficient strength of electrical coupling is achieved by insulating silicon with a thin film of TiO2 to achieve a high capacitance and by removing NaCl from the electrolyte to enhance the resistance of the cell-chip contact. When a decaying voltage ramp is applied to the EOS capacitor, an outward current through the attached cell membrane is observed that is specific for Kv1.3 channels. An open probability up to fifty percent is estimated by comparison with a numerical simulation of the cell-chip contact.

High performance, flexible, poly(3,4-ethylenedioxythiophene) supercapacitors achieved by doping redox mediators in organogel electrolytes

NASA Astrophysics Data System (ADS)

Zhang, Huanhuan; Li, Jinyu; Gu, Cheng; Yao, Mingming; Yang, Bing; Lu, Ping; Ma, Yuguang

2016-11-01

The relatively low energy density is now a central issue hindering the development of supercapacitors as energy storage devices. Various approaches are thus developed to enhance the energy density, mainly centering on the fabrication of electrode materials or optimization of cell configurations. Compared with these approaches, modifications in electrolytes are much simple and versatile. Herein, we integrate the wide voltages endowed by organic electrolytes and the additional capacitances brought by redox mediators, to fabricate high energy density supercapacitors. On the basis of this idea, supercapacitors with poly(3,4-ethylenedioxythiophene) (PEDOT) as electrode material exhibit extended operating voltage of 1.5 V, extraordinary capacitance of 363 F g-1 and high energy density of 27.4 Wh kg-1. The redox mediators reported here, ferrocene and 4-oxo-2,2,6,6-tetramethylpiperidinooxy, are the first time being applied in supercapacitors, especially in the gel state. While providing additional faradaic capacitances, they also exhibit synergistic interaction with PEDOT and improve the cycling stability of supercapacitors.