50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

2015-12-07

Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  <1 mm(-1). In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

Within-wafer CD variation induced by wafer shape

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2016-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer

Wafer screening device and methods for wafer screening

DOEpatents

Sopori, Bhushan; Rupnowski, Przemyslaw

2014-07-15

Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks--microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers--a stress that mimics the highest stress during cell/module processing. If a wafer survives this stress, it has a high probability of surviving without breakage during cell/module fabrication. Based on this, we have developed a high throughput, noncontact method for applying a predetermined stress to a wafer. The wafers are carried on a belt through a chamber that illuminates the wafer with an intense light of a predetermined intensity distribution that can be varied by changing the power to the light source. As the wafers move under the light source, each wafer undergoes a dynamic temperature profile that produces a preset elastic stress. If this stress exceeds the wafer strength, the wafer will break. The broken wafers are separated early, eliminating cost of processing into cell/module. We will describe details of the system and show comparison of breakage statistics with the breakage on a production line.

Predictive modeling of composite material degradation using piezoelectric wafer sensors electromechanical impedance spectroscopy

NASA Astrophysics Data System (ADS)

Gresil, Matthieu; Yu, Lingyu; Sutton, Mike; Guo, Siming; Pollock, Patrick

2012-04-01

The advancement of composite materials in aircraft structures has led to on increased need for effective structural health monitoring (SHM) technologies that are able to detect and assess damage present in composites structures. The work presented in this paper is interested in understanding using self-sensing piezoelectric wafer active sensors (PWAS) to conduct electromechanical impedance spectroscopy (EMIS) in glass fiber reinforced plastic (GFRP) to perform structures health monitoring. PWAS are bonded to the composite material and the EMIS method is used to analyze the changes in the structural resonance and anti-resonance. As the damage progresses in the specimen, the impedance spectrum will change. In addition, multi-physics based finite element method (MP-FEM) is used to model the electromechanical behavior of a free PWAS and its interaction with the host structure on which it is bonded. The MPFEM permits the input and the output variables to be expressed directly in electric terms while the two way electromechanical conversion is done internally in the MP_FEM formulation. To reach the goal of using the EMIS approach to detect damage, several damages models are generated on laminated GFRP structures. The effects of the modeling are carefully studied through experimental validation. A good match has been observed for low and very high frequencies.

Contactless measurement of electrical conductivity of semiconductor wafers using the reflection of millimeter waves

NASA Astrophysics Data System (ADS)

Ju, Yang; Inoue, Kojiro; Saka, Masumi; Abe, Hiroyuki

2002-11-01

We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter waves. A focusing sensor was developed to focus a 110 GHz millimeter wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter wave signal were measured by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafers. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method.

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

THz quantum cascade lasers with wafer bonded active regions.

PubMed

Brandstetter, M; Deutsch, C; Benz, A; Cole, G D; Detz, H; Andrews, A M; Schrenk, W; Strasser, G; Unterrainer, K

2012-10-08

We demonstrate terahertz quantum-cascade lasers with a 30 μm thick double-metal waveguide, which are fabricated by stacking two 15 μm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the output power is increased by significantly more than a factor of 2 without reducing the maximum operating temperature and without increasing the threshold current.

Wafer-scale micro-optics fabrication

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard

2012-07-01

Micro-optics is an indispensable key enabling technology for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly-efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the past decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks, bringing high-speed internet to our homes. Even our modern smart phones contain a variety of micro-optical elements. For example, LED flash light shaping elements, the secondary camera, ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by the semiconductor industry. Thousands of components are fabricated in parallel on a wafer. This review paper recapitulates major steps and inventions in wafer-scale micro-optics technology. The state-of-the-art of fabrication, testing and packaging technology is summarized.

Edge printability: techniques used to evaluate and improve extreme wafer edge printability

NASA Astrophysics Data System (ADS)

Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

2004-05-01

The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

Particulate contamination removal from wafers using plasmas and mechanical agitation

DOEpatents

Selwyn, G.S.

1998-12-15

Particulate contamination removal from wafers is disclosed using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer`s position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates. 4 figs.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

NASA Astrophysics Data System (ADS)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Pappas, C. G.; Salatino, M.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Van Lanen, J.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-08-01

Advanced ACTPol (AdvACT) is a third-generation cosmic microwave background receiver to be deployed in 2016 on the Atacama Cosmology Telescope (ACT). Spanning five frequency bands from 25 to 280 GHz and having just over 5600 transition-edge sensor (TES) bolometers, this receiver will exhibit increased sensitivity and mapping speed compared to previously fielded ACT instruments. This paper presents the fabrication processes developed by NIST to scale to large arrays of feedhorn-coupled multichroic AlMn-based TES polarimeters on 150-mm diameter wafers. In addition to describing the streamlined fabrication process which enables high yields of densely packed detectors across larger wafers, we report the details of process improvements for sensor (AlMn) and insulator (SiN_x) materials and microwave structures, and the resulting performance improvements.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

NASA Technical Reports Server (NTRS)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.;

Silicon wafer temperature monitoring using all-fiber laser ultrasonics

NASA Astrophysics Data System (ADS)

Alcoz, Jorge J.; Duffer, Charles E.

1998-03-01

Laser-ultrasonics is a very attractive technique for in-line process control in the semiconductor industry as it is compatible with the clean room environment and offers the capability to inspect parts at high-temperature. We describe measurements of the velocity of laser-generated Lamb waves in silicon wafers as a function of temperature using fiber- optic laser delivery and all-fiber interferometric sensing. Fundamental anti-symmetric Lamb-wave modes were generated in 5 inches < 111 > silicon wafers using a Nd:YAG laser coupled to a large-core multimode fiber. Generation was also performed using an array of sources created with a diffraction grating. For detection a compact fiber-optic sensor was used which is well suited for industrial environments as it is compact, rugged, stable, and low-cost. The wafers were heated up to 1000 degrees C and the temperature correlated with ultrasonic velocity measurements.

Particulate contamination removal from wafers using plasmas and mechanical agitation

DOEpatents

Selwyn, Gary S.

1998-01-01

Particulate contamination removal from wafers using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer's position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates.

High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor.

PubMed

Wang, Liying; Du, Xiaohui; Wang, Lingyun; Xu, Zhanhao; Zhang, Chenying; Gu, Dandan

2017-03-16

In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS) stackable structure and integrated Ti getter. A double-layer structure similar to a silicon-on-insulator (SOI) wafer is formed after the resonant layer and the pressure-sensitive layer are bonded by silicon direct bonding (SDB). In order to form good bonding quality between the pressure-sensitive layer and the glass cap layer, the cross-layer anodic bonding technique is proposed for vacuum package by sputtering Aluminum (Al) on the combination wafer of the pressure-sensitive layer and the resonant layer to achieve electrical interconnection. The model and the bonding effect of this technique are discussed. In addition, in order to enhance the performance of titanium (Ti) getter, the prepared and activation parameters of Ti getter under different sputtering conditions are optimized and discussed. Based on the optimized results, the Ti getter (thickness of 300 nm to 500 nm) is also deposited on the inside of the glass groove by magnetron sputtering to maintain stable quality factor (Q). The Q test of the built testing system shows that the number of resonators with a Q value of more than 10,000 accounts for more than 73% of the total. With an interval of 1.5 years, the Q value of the samples remains almost constant. It proves the proposed cross-layer anodic bonding and getter technique can realize high-Q resonant structure for long-term stable operation.

Functional Testing and Characterisation of ISFETs on Wafer Level by Means of a Micro-droplet Cell#

PubMed Central

Poghossian, Arshak; Schumacher, Kerstin; Kloock, Joachim P.; Rosenkranz, Christian; Schultze, Joachim W.; Müller-Veggian, Mattea; Schöning, Michael J.

2006-01-01

A wafer-level functionality testing and characterisation system for ISFETs (ion-sensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for non-functioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

2010-01-01

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

Piezoelectric wafer active sensors under gamma radiation exposure toward applications for structural health monitoring of nuclear dry cask storage systems

NASA Astrophysics Data System (ADS)

Faisal Haider, Mohammad; Mei, Hanfei; Lin, Bin; Yu, Lingyu; Giurgiutiu, Victor; Lam, Poh-Sang; Verst, Christopher

2018-03-01

Structural health monitoring (SHM) is in urgent need and must be integrated into the nuclear-spent fuel storage systems to guarantee the safe operation. The dry cask storage system (DCSS) is such storage facility, which is licensed for temporary storage for nuclear-spent fuel at the independent spent fuel storage installations (ISFSIs) for certain predetermined period of time. Gamma radiation is one of the major radiation sources near DCSS. Therefore, a detailed experimental investigation was completed on the gamma radiation endurance of piezoelectric wafer active sensors (PWAS) transducers for SHM applications to the DCSS system. The irradiation test was done in a Co-60 gamma irradiator. Lead Zirconate Titanate (PZT) and Gallium Orthophosphate (GaPO4) PWAS transducers were exposed to 40.7 kGy gamma radiation. Total radiation dose was achieved in two different radiation dose rates: (a) slower radiation rate at 0.1 kGy/hr for 20 hours (b) accelerated radiation rate at 1.233 kGy/hr for 32 hours. The total cumulative radiation dose of 40.7 kGy is equivalent to 45 years of operation in DCSS system. Electro-mechanical impedance and admittance (EMIA) signatures and electrical capacitance were measured to evaluate the PWAS performance after each gamma radiation exposure. The change in resonance frequency of PZT-PWAS transducer for both in-plane and thickness mode was observed. The GaPO4-PWAS EMIA spectra do not show a significant shift in resonance frequency after gamma irradiation exposure. Radiation endurance of new high-temperature HPZ-HiT PWAS transducer was also evaluated. The HPZ-HiT transducers were exposed to gamma radiation at 1.233 kGy/hr for 160 hours with 80 hours interval. Therefore, the total accumulated gamma radiation dose is 184 kGy. No significant change in impedance spectra was observed due to gamma radiation exposure.

Method of producing an integral resonator sensor and case

NASA Technical Reports Server (NTRS)

Challoner, A. Dorian (Inventor); Yee, Karl Y. (Inventor); Shcheglov, Kirill V. (Inventor); Hayworth, Ken J. (Inventor); Wiberg, Dean V. (Inventor)

2005-01-01

The present invention discloses an inertial sensor having an integral resonator. A typical sensor comprises a planar mechanical resonator for sensing motion of the inertial sensor and a case for housing the resonator. The resonator and a wall of the case are defined through an etching process. A typical method of producing the resonator includes etching a baseplate, bonding a wafer to the etched baseplate, through etching the wafer to form a planar mechanical resonator and the wall of the case and bonding an end cap wafer to the wall to complete the case.

Stable wafer-carrier system

DOEpatents

Rozenzon, Yan; Trujillo, Robert T; Beese, Steven C

2013-10-22

One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

Rapid Multi-Damage Identification for Health Monitoring of Laminated Composites Using Piezoelectric Wafer Sensor Arrays

PubMed Central

Si, Liang; Wang, Qian

2016-01-01

Through the use of the wave reflection from any damage in a structure, a Hilbert spectral analysis-based rapid multi-damage identification (HSA-RMDI) technique with piezoelectric wafer sensor arrays (PWSA) is developed to monitor and identify the presence, location and severity of damage in carbon fiber composite structures. The capability of the rapid multi-damage identification technique to extract and estimate hidden significant information from the collected data and to provide a high-resolution energy-time spectrum can be employed to successfully interpret the Lamb waves interactions with single/multiple damage. Nevertheless, to accomplish the precise positioning and effective quantification of multiple damage in a composite structure, two functional metrics from the RMDI technique are proposed and used in damage identification, which are the energy density metric and the energy time-phase shift metric. In the designed damage experimental tests, invisible damage to the naked eyes, especially delaminations, were detected in the leftward propagating waves as well as in the selected sensor responses, where the time-phase shift spectra could locate the multiple damage whereas the energy density spectra were used to quantify the multiple damage. The increasing damage was shown to follow a linear trend calculated by the RMDI technique. All damage cases considered showed completely the developed RMDI technique potential as an effective online damage inspection and assessment tool. PMID:27153070

Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fong, Theodore E.

2013-05-06

The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technologymore » further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.« less

Wafer-scale fabrication of polymer-based microdevices via injection molding and photolithographic micropatterning protocols.

PubMed

Lee, Dae-Sik; Yang, Haesik; Chung, Kwang-Hyo; Pyo, Hyeon-Bong

2005-08-15

Because of their broad applications in biomedical analysis, integrated, polymer-based microdevices incorporating micropatterned metallic and insulating layers are significant in contemporary research. In this study, micropatterns for temperature sensing and microelectrode sets for electroanalysis have been implemented on an injection-molded thin polymer membrane by employing conventional semiconductor processing techniques (i.e., standard photolithographic methods). Cyclic olefin copolymer (COC) is chosen as the polymer substrate because of its high chemical and thermal stability. A COC 5-in. wafer (1-mm thickness) is manufactured using an injection molding method, in which polymer membranes (approximately 130 microm thick and 3 mm x 6 mm in area) are implemented simultaneously in order to reduce local thermal mass around micropatterned heaters and temperature sensors. The highly polished surface (approximately 4 nm within 40 microm x 40 microm area) of the fabricated COC wafer as well as its good resistance to typical process chemicals makes it possible to use the standard photolithographic and etching protocols on the COC wafer. Gold micropatterns with a minimum 5-microm line width are fabricated for making microheaters, temperature sensors, and microelectrodes. An insulating layer of aluminum oxide (Al2O3) is prepared at a COC-endurable low temperature (approximately 120 degrees C) by using atomic layer deposition and micropatterning for the electrode contacts. The fabricated microdevice for heating and temperature sensing shows improved performance of thermal isolation, and microelectrodes display good electrochemical performances for electrochemical sensors. Thus, this novel 5-in. wafer-level microfabrication method is a simple and cost-effective protocol to prepare polymer substrate and demonstrates good potential for application to highly integrated and miniaturized biomedical devices.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

NASA Astrophysics Data System (ADS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

Thermo-acousto-photonics for noncontact temperature measurement in silicon wafer processing

NASA Astrophysics Data System (ADS)

Suh, Chii-Der S.; Rabroker, G. Andrew; Chona, Ravinder; Burger, Christian P.

1999-10-01

A non-contact thermometry technique has been developed to characterize the thermal state of silicon wafers during rapid thermal processing. Information on thermal variations is obtained from the dispersion relations of the propagating waveguide mode excited in wafers using a non-contact, broadband optical system referred to as Thermal Acousto- Photonics for Non-Destructive Evaluation. Variations of thermo-mechanical properties in silicon wafers are correlated to temperature changes by performing simultaneous time-frequency analyses on Lamb waveforms acquired with a fiber-tip interferometer sensor. Experimental Lamb wave data collected for cases ranging from room temperature to 400 degrees C is presented. The results show that the temporal progressions of all spectral elements found in the fundamental antisymmetric mode are strong functions of temperature. This particular attribute is exploited to achieve a thermal resolution superior to the +/- 5 degrees C attainable through current pyrometric techniques. By analyzing the temperature-dependent group velocity of a specific frequency component over the temperature range considered and then comparing the results to an analytical model developed for silicon wafers undergoing annealing, excellent agreement was obtained. Presented results demonstrate the feasibility of applying laser-induced stress waves as a temperature diagnostic during rapid thermal processing.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-05-20

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-11-25

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder

NASA Astrophysics Data System (ADS)

Sparks, D.; Queen, G.; Weston, R.; Woodward, G.; Putty, M.; Jordan, L.; Zarabadi, S.; Jayakar, K.

2001-11-01

The fabrication and reliability of a solder wafer-to-wafer bonding process is discussed. Using a solder reflow process allows vacuum packaging to be accomplished with unplanarized complementary metal-oxide semiconductor (CMOS) surface topography. This capability enables standard CMOS processes, and integrated microelectromechanical systems devices to be packaged at the chip-level. Alloy variations give this process the ability to bond at lower temperatures than most alternatives. Factors affecting hermeticity, shorts, Q values, shifting cavity pressure, wafer saw cleanliness and corrosion resistance will be covered.

Reduction of across-wafer CDU via constrained optimization of a multichannel PEB plate controller based on in-situ measurements of thermal time constants

NASA Astrophysics Data System (ADS)

Tiffany, Jason E.; Cohen, Barney M.

2004-05-01

As line widths approach 90nm node in volume production, post exposure bake (PEB) uniformity becomes a much larger component of the across wafer critical dimension uniformity (CDU). In production, the need for PEB plate matching has led to novel solutions such as plate specific dose offsets. This type of correction does not help across wafer CDU. Due to unequal activation energies of the critical PEB processes, any thermal history difference can result in a corresponding CD variation. The rise time of the resist to the target temperature has been shown to affect CD, with the most critical time being the first 5-7 seconds. A typical PEB plate has multi-zone thermal control with one thermal sensor per zone. The current practice is to setup each plate to match the steady-state target temperature, ignoring any dynamic performance. Using an in-situ wireless RTD wafer, it is possible to characterize the dynamic performance, or time constant, of each RTD location on the sensing wafer. Constrained by the zone structure of the PEB plate, the proportional, integral and derivative (PID) settings of each controller channel could be optimized to reduce the variations in rise time across the RTD wafer, thereby reducing the PEB component of across wafer CDU.

Surface-mount sapphire interferometric temperature sensor.

PubMed

Zhu, Yizheng; Wang, Anbo

2006-08-20

A fiber-optic high-temperature sensor is demonstrated by bonding a 45 degrees -polished single-crystal sapphire fiber on the surface of a sapphire wafer, whose optical thickness is temperature dependent and measured by white-light interferometry. A novel adhesive-free coupling between the silica and sapphire fibers is achieved by fusion splicing, and its performance is characterized. The sensor's interference signal is investigated for its dependence on angular alignment between the fiber and the wafer. A prototype sensor is tested to 1,170 degrees C with a resolution of 0.4 degrees C, demonstrating excellent potential for high-temperature measurement.

Wafer level reliability testing: An idea whose time has come

NASA Technical Reports Server (NTRS)

Trapp, O. D.

1987-01-01

Wafer level reliability testing has been nurtured in the DARPA supported workshops, held each autumn since 1982. The seeds planted in 1982 have produced an active crop of very large scale integration manufacturers applying wafer level reliability test methods. Computer Aided Reliability (CAR) is a new seed being nurtured. Users are now being awakened by the huge economic value of the wafer reliability testing technology.

Controllable laser thermal cleavage of sapphire wafers

NASA Astrophysics Data System (ADS)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Design Study of Wafer Seals for Future Hypersonic Vehicles

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H.; Finkbeiner, Joshua R.; Steinetz, Bruce M.; DeMange, Jeffrey J.

2005-01-01

Future hypersonic vehicles require high temperature, dynamic seals in advanced hypersonic engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Current seals do not meet the demanding requirements of these applications, so NASA Glenn Research Center is developing improved designs to overcome these shortfalls. An advanced ceramic wafer seal design has shown promise in meeting these needs. Results from a design of experiments study performed on this seal revealed that several installation variables played a role in determining the amount of leakage past the seals. Lower leakage rates were achieved by using a tighter groove width around the seals, a higher seal preload, a tighter wafer height tolerance, and a looser groove length. During flow testing, a seal activating pressure acting behind the wafers combined with simulated vibrations to seat the seals more effectively against the sealing surface and produce lower leakage rates. A seal geometry study revealed comparable leakage for full-scale wafers with 0.125 and 0.25 in. thicknesses. For applications in which lower part counts are desired, fewer 0.25-in.-thick wafers may be able to be used in place of 0.125-in.-thick wafers while achieving similar performance. Tests performed on wafers with a rounded edge (0.5 in. radius) in contact with the sealing surface resulted in flow rates twice as high as those for wafers with a flat edge. Half-size wafers had leakage rates approximately three times higher than those for full-size wafers.

Two-Axis Direct Fluid Shear Stress Sensor for Aerodynamic Applications

NASA Technical Reports Server (NTRS)

Bajikar, Sateesh S.; Scott, Michael A.; Adcock, Edward E.

2011-01-01

This miniature or micro-sized semiconductor sensor design provides direct, nonintrusive measurement of skin friction or wall shear stress in fluid flow situations in a two-axis configuration. The sensor is fabricated by microelectromechanical system (MEMS) technology, enabling small size and multiple, low-cost reproductions. The sensors may be fabricated by bonding a sensing element wafer to a fluid-coupling element wafer. Using this layered machine structure provides a truly three-dimensional device.

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

NASA Astrophysics Data System (ADS)

Turner, K. T.; Spearing, S. M.

2002-12-01

Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

Performance Evaluations of Ceramic Wafer Seals

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H., Jr.; DeMange, Jeffrey J.; Steinetz, Bruce M.

2006-01-01

Future hypersonic vehicles will require high temperature, dynamic seals in advanced ramjet/scramjet engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Seal temperatures in these locations can exceed 2000 F, especially when the seals are in contact with hot ceramic matrix composite sealing surfaces. NASA Glenn Research Center is developing advanced ceramic wafer seals to meet the needs of these applications. High temperature scrub tests performed between silicon nitride wafers and carbon-silicon carbide rub surfaces revealed high friction forces and evidence of material transfer from the rub surfaces to the wafer seals. Stickage between adjacent wafers was also observed after testing. Several design changes to the wafer seals were evaluated as possible solutions to these concerns. Wafers with recessed sides were evaluated as a potential means of reducing friction between adjacent wafers. Alternative wafer materials are also being considered as a means of reducing friction between the seals and their sealing surfaces and because the baseline silicon nitride wafer material (AS800) is no longer commercially available.

Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method

NASA Astrophysics Data System (ADS)

Takigawa, Ryo; Higurashi, Eiji; Asano, Tanemasa

2018-06-01

In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modified SAB method using ion beam bombardment demonstrates the room-temperature wafer bonding of LN and SiO2. The bonded wafer was successfully cut into 0.5 × 0.5 mm2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m2 using the crack opening method. These results indicate that a strong bond strength can be achieved, which may be sufficient for device applications.

Microemulsion-Based Mucoadhesive Buccal Wafers: Wafer Formation, In Vitro Release, and Ex Vivo Evaluation.

PubMed

Pham, Minh Nguyet; Van Vo, Toi; Tran, Van-Thanh; Tran, Phuong Ha-Lien; Tran, Thao Truong-Dinh

2017-10-01

Microemulsion has the potentials to enhance dissolution as well as facilitate absorption and permeation of poorly water-soluble drugs through biological membranes. However, its application to govern a controlled release buccal delivery for local treatment has not been discovered. The aim of this study is to develop microemulsion-based mucoadhesive wafers for buccal delivery based on an incorporation of the microemulsion with mucoadhesive agents and mannitol. Ratio of oil to surfactant to water in the microemulsion significantly impacted quality of the wafers. Furthermore, the combination of carbopol and mannitol played a key role in forming the desired buccal wafers. The addition of an extra 50% of water to the formulation was suitable for wafer formation by freeze-drying, which affected the appearance and distribution of carbopol in the wafers. The amount of carbopol was critical for the enhancement of mucoadhesive properties and the sustained drug release patterns. Release study presented a significant improvement of the drug release profile following sustained release for 6 h. Ex vivo mucoadhesive studies provided decisive evidence to the increased retention time of wafers along with the increased carbopol content. The success of this study indicates an encouraging strategy to formulate a controlled drug delivery system by incorporating microemulsions into mucoadhesive wafers.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2008-10-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-04-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-03-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

A Novel Tactile Sensor with Electromagnetic Induction and Its Application on Stick-Slip Interaction Detection

PubMed Central

Liu, Yanjie; Han, Haijun; Liu, Tao; Yi, Jingang; Li, Qingguo; Inoue, Yoshio

2016-01-01

Real-time detection of contact states, such as stick-slip interaction between a robot and an object on its end effector, is crucial for the robot to grasp and manipulate the object steadily. This paper presents a novel tactile sensor based on electromagnetic induction and its application on stick-slip interaction. An equivalent cantilever-beam model of the tactile sensor was built and capable of constructing the relationship between the sensor output and the friction applied on the sensor. With the tactile sensor, a new method to detect stick-slip interaction on the contact surface between the object and the sensor is proposed based on the characteristics of friction change. Furthermore, a prototype was developed for a typical application, stable wafer transferring on a wafer transfer robot, by considering the spatial magnetic field distribution and the sensor size according to the requirements of wafer transfer. The experimental results validate the sensing mechanism of the tactile sensor and verify its feasibility of detecting stick-slip on the contact surface between the wafer and the sensor. The sensing mechanism also provides a new approach to detect the contact state on the soft-rigid surface in other robot-environment interaction systems. PMID:27023545

Sapphire Fabry-Perot high-temperature sensor study

NASA Astrophysics Data System (ADS)

Yao, Yi-qiang; Liang, Wei-long; Gui, Xinwang; Fan, Dian

2017-04-01

A new structure sapphire fiber Fabry-Perot (F-P) high-temperature sensor based on sapphire wafer was proposed and fabricated. The sensor uses the sapphire fiber as a transmission waveguide, the sapphire wafer as an Fabry-Perot (F-P) interferometer and the new structure of "Zirconia ferrule-Zirconia tube" as the sensor fixing structure of the sensor. The reflection spectrum of the interferometer was demodulated by a serial of data processing including FIR bandpass filter, FFT (Fast Fourier Transformation) estimation and LSE (least squares estimation) compensation to obtain more precise OPD. Temperature measurement range is from 20 to 1000°C in experiment. The experimental results show that the sensor has the advantages of small size, low cost, simple fabrication and high repeatability. It can be applied for longterm, stable and high-precision high temperature measurement in harsh environments.

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

NASA Astrophysics Data System (ADS)

Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

2015-03-01

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

Support apparatus for semiconductor wafer processing

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Torres, Kenneth J.

2003-06-10

A support apparatus for minimizing gravitational stress in semiconductor wafers, and particularly silicon wafers, during thermal processing. The support apparatus comprises two concentric circular support structures disposed on a common support fixture. The two concentric circular support structures, located generally at between 10 and 70% and 70 and 100% and preferably at 35 and 82.3% of the semiconductor wafer radius, can be either solid rings or a plurality of spaced support points spaced apart from each other in a substantially uniform manner. Further, the support structures can have segments removed to facilitate wafer loading and unloading. In order to withstand the elevated temperatures encountered during semiconductor wafer processing, the support apparatus, including the concentric circular support structures and support fixture can be fabricated from refractory materials, such as silicon carbide, quartz and graphite. The claimed wafer support apparatus can be readily adapted for use in either batch or single-wafer processors.

Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

NASA Astrophysics Data System (ADS)

Nguyen, M. D.; Tiggelaar, R.; Aukes, T.; Rijnders, G.; Roelof, G.

2017-11-01

Piezoelectric lead-zirconate-titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

Wafer characteristics via reflectometry

DOEpatents

Sopori, Bhushan L.

2010-10-19

Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

NASA Astrophysics Data System (ADS)

Lee, Ho Ki; Baek, Kye Hyun; Shin, Kyoungsub

2017-06-01

As semiconductor devices are scaled down to sub-20 nm, process window of plasma etching gets extremely small so that process drift or shift becomes more significant. This study addresses one of typical process drift issues caused by consumable parts erosion over time and provides feasible solution by using virtual metrology (VM) based wafer-to-wafer control. Since erosion of a shower head has center-to-edge area dependency, critical dimensions (CDs) at the wafer center and edge area get reversed over time. That CD trend is successfully estimated on a wafer-to-wafer basis by a partial least square (PLS) model which combines variables from optical emission spectroscopy (OES), VI-probe and equipment state gauges. R 2 of the PLS model reaches 0.89 and its prediction performance is confirmed in a mass production line. As a result, the model can be exploited as a VM for wafer-to-wafer control. With the VM, advanced process control (APC) strategy is implemented to solve the CD drift. Three σ of CD across wafer is improved from the range (1.3-2.9 nm) to the range (0.79-1.7 nm). Hopefully, results introduced in this paper will contribute to accelerating implementation of VM based APC strategy in semiconductor industry.

Effect of wafer geometry on lithography chucking processes

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Sinha, Jaydeep K.

2015-03-01

Wafer flatness during exposure in lithography tools is critical and is becoming more important as feature sizes in devices shrink. While chucks are used to support and flatten the wafer during exposure, it is essential that wafer geometry be controlled as well. Thickness variations of the wafer and high-frequency wafer shape components can lead to poor flatness of the chucked wafer and ultimately patterning problems, such as defocus errors. The objective of this work is to understand how process-induced wafer geometry, resulting from deposited films with non-uniform stress, can lead to high-frequency wafer shape variations that prevent complete chucking in lithography scanners. In this paper, we discuss both the acceptable limits of wafer shape that permit complete chucking to be achieved, and how non-uniform residual stresses in films, either due to patterning or process non-uniformity, can induce high spatial frequency wafer shape components that prevent chucking. This paper describes mechanics models that relate non-uniform film stress to wafer shape and presents results for two example cases. The models and results can be used as a basis for establishing control strategies for managing process-induced wafer geometry in order to avoid wafer flatness-induced errors in lithography processes.

Wafer scale oblique angle plasma etching

DOEpatents

Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

2017-05-23

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Laser wafering for silicon solar.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurfacemore » damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.« less

High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer

NASA Astrophysics Data System (ADS)

Maruyama, Keisuke; Hanafusa, Hiroaki; Ashihara, Ryuhei; Hayashi, Shohei; Murakami, Hideki; Higashi, Seiichiro

2015-06-01

We have investigated high-temperature and rapid annealing of a silicon carbide (SiC) wafer by atmospheric pressure thermal plasma jet (TPJ) irradiation for impurity activation. To reduce the temperature gradient in the SiC wafer, a DC current preheating system and the lateral back-and-forth motion of the wafer were introduced. A maximum surface temperature of 1835 °C within 2.4 s without sample breakage was achieved, and aluminum (Al), phosphorus (P), and arsenic (As) activations in SiC were demonstrated. We have investigated precise control of heating rate (Rh) and cooling rate (Rc) during rapid annealing of P+-implanted 4H-SiC and its impact on impurity activation. No dependence of resistivity on Rh was observed, while increasing Rc significantly decreased resistivity. A minimum resistivity of 0.0025 Ω·cm and a maximum carrier concentration of 2.9 × 1020 cm-3 were obtained at Rc = 568 °C/s.

Carbon dioxide capture using resin-wafer electrodeionization

DOEpatents

Lin, YuPo J.; Snyder, Seth W.; Trachtenberg, Michael S.; Cowan, Robert M.; Datta, Saurav

2015-09-08

The present invention provides a resin-wafer electrodeionization (RW-EDI) apparatus including cathode and anode electrodes separated by a plurality of porous solid ion exchange resin wafers, which when in use are filled with an aqueous fluid. The apparatus includes one or more wafers comprising a basic ion exchange medium, and preferably includes one or more wafers comprising an acidic ion exchange medium. The wafers are separated from one another by ion exchange membranes. The fluid within the acidic and/or basic ion exchange wafers preferably includes, or is in contact with, a carbonic anhydrase (CA) enzyme to facilitate conversion of bicarbonate ion to carbon dioxide within the acidic medium. A pH suitable for exchange of CO.sub.2 is electrochemically maintained within the basic and acidic ion exchange wafers by applying an electric potential across the cathode and anode.

Activity Recognition Invariant to Sensor Orientation with Wearable Motion Sensors.

PubMed

Yurtman, Aras; Barshan, Billur

2017-08-09

Most activity recognition studies that employ wearable sensors assume that the sensors are attached at pre-determined positions and orientations that do not change over time. Since this is not the case in practice, it is of interest to develop wearable systems that operate invariantly to sensor position and orientation. We focus on invariance to sensor orientation and develop two alternative transformations to remove the effect of absolute sensor orientation from the raw sensor data. We test the proposed methodology in activity recognition with four state-of-the-art classifiers using five publicly available datasets containing various types of human activities acquired by different sensor configurations. While the ordinary activity recognition system cannot handle incorrectly oriented sensors, the proposed transformations allow the sensors to be worn at any orientation at a given position on the body, and achieve nearly the same activity recognition performance as the ordinary system for which the sensor units are not rotatable. The proposed techniques can be applied to existing wearable systems without much effort, by simply transforming the time-domain sensor data at the pre-processing stage.

Methane production using resin-wafer electrodeionization

DOEpatents

Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

2014-03-25

The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

Wafer-level micro-optics: trends in manufacturing, testing, packaging, and applications

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Gong, Li; Rieck, Juergen; Zheng, Alan

2012-11-01

Micro-optics is an indispensable key enabling technology (KET) for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the last decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks (supercomputer, ROADM), bringing high-speed internet to our homes (FTTH). Even our modern smart phones contain a variety of micro-optical elements. For example, LED flashlight shaping elements, the secondary camera, and ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by semiconductor industry. Thousands of components are fabricated in parallel on a wafer. We report on the state of the art in wafer-based manufacturing, testing, packaging and present examples and applications for micro-optical components and systems.

A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S., E-mail: shailesh.sharma6@mail.dcu.ie; National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9; Gahan, D., E-mail: david.gahan@impedans.com

2014-04-15

A novel retarding field energy analyzer design capable of measuring the spatial uniformity of the ion energy and ion flux across the surface of a semiconductor wafer is presented. The design consists of 13 individual, compact-sized, analyzers, all of which are multiplexed and controlled by a single acquisition unit. The analyzers were tested to have less than 2% variability from unit to unit due to tight manufacturing tolerances. The main sensor assembly consists of a 300 mm disk to mimic a semiconductor wafer and the plasma sampling orifices of each sensor are flush with disk surface. This device is placedmore » directly on top of the rf biased electrode, at the wafer location, in an industrial capacitively coupled plasma reactor without the need for any modification to the electrode structure. The ion energy distribution, average ion energy, and average ion flux were measured at the 13 locations over the surface of the powered electrode to determine the degree of spatial nonuniformity. The ion energy and ion flux are shown to vary by approximately 20% and 5%, respectively, across the surface of the electrode for the range of conditions investigated in this study.« less

Interferometric thickness calibration of 300 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Quandou; Griesmann, Ulf; Polvani, Robert

2005-12-01

The "Improved Infrared Interferometer" (IR 3) at the National Institute of Standards and Technology (NIST) is a phase-measuring interferometer, operating at a wavelength of 1550 nm, which is being developed for measuring the thickness and thickness variation of low-doped silicon wafers with diameters up to 300 mm. The purpose of the interferometer is to produce calibrated silicon wafers, with a certified measurement uncertainty, which can be used as reference wafers by wafer manufacturers and metrology tool manufacturers. We give an overview of the design of the interferometer and discuss its application to wafer thickness measurements. The conversion of optical thickness, as measured by the interferometer, to the wafer thickness requires knowledge of the refractive index of the material of the wafer. We describe a method for measuring the refractive index which is then used to establish absolute thickness and thickness variation maps for the wafer.

Temperature Dependent Electrical Properties of PZT Wafer

NASA Astrophysics Data System (ADS)

Basu, T.; Sen, S.; Seal, A.; Sen, A.

2016-04-01

The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

A Micromachined Geometric Moire Interferometric Floating-Element Shear Stress Sensor

NASA Technical Reports Server (NTRS)

Horowitz, S.; Chen, T.; Chandrasekaran, V.; Tedjojuwono, K.; Nishida, T.; Cattafesta, L.; Sheplak, M.

2004-01-01

This paper presents the development of a floating-element shear stress sensor that permits the direct measurement of skin friction based on geometric Moir interferometry. The sensor was fabricated using an aligned wafer-bond/thin-back process producing optical gratings on the backside of a floating element and on the top surface of the support wafer. Experimental characterization indicates a static sensitivity of 0.26 microns/Pa, a resonant frequency of 1.7 kHz, and a noise floor of 6.2 mPa/(square root)Hz.

Porous solid ion exchange wafer for immobilizing biomolecules

DOEpatents

Arora, Michelle B.; Hestekin, Jamie A.; Lin, YuPo J.; St. Martin, Edward J.; Snyder, Seth W.

2007-12-11

A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

DOE PAGES

Bubna, M.; Bolla, G.; Bortoletto, D.; ...

2015-08-03

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch

NASA Astrophysics Data System (ADS)

Fukuda, Akira; Fukuda, Tetsuo; Fukunaga, Akira; Tsujimura, Manabu

2012-05-01

In the chemical mechanical polishing (CMP) process, uniform polishing up to near the wafer edge is essential to reduce edge exclusion and improve yield. In this study, we examine the influences of inherent wafer edge geometries, i.e., wafer edge roll-off and notch, on the CMP removal rate profile. We clarify the areas in which the removal rate profile is affected by the wafer edge roll-off and the notch, as well as the intensity of their effects on the removal rate profile. In addition, we propose the use of a small notch to reduce the influence of the wafer notch and present the results of an examination by finite element method (FEM) analysis.

Output blue light evaluation for phosphor based smart white LED wafer level packages.

PubMed

Kolahdouz, Zahra; Rostamian, Ali; Kolahdouz, Mohammadreza; Ma, Teng; van Zeijl, Henk; Zhang, Kouchi

2016-02-22

This study presents a blue light detector for evaluating the output light of phosphor based white LED package. It is composed of a silicon stripe-shaped photodiode designed and implemented in a 2 μm BiCMOS process which can be used for wafer level integration of different passive and active devices all in just 5 lithography steps. The final device shows a high selectivity to blue light. The maximum responsivity at 480 nm is matched with the target blue LED illumination. The designed structure have better responsivity compared to simple photodiode structure due to reducing the effect of dead layer formation close to the surface because of implantation. It has also a two-fold increase in the responsivity and quantum efficiency compared to previously similar published sensors.

Orthogonal Chip Based Electronic Sensors for Chemical Agents

DTIC Science & Technology

2012-04-06

operation with ultralow power requirements. This work has been carried out with the aid of substrate wafers provided by Qualcomm . The initial...produced by Qualcomm as a less expensive OTFT platform for sensors. 8. New Discoveries Air-stable organic thin-film transistor (OTFT) sensors

Development of Hybrid Sensor Arrays for Sensor Arrays for Simultaneous Measurement of Pressure and Shear Stress Distribution

NASA Technical Reports Server (NTRS)

2000-01-01

This document reports on the progress in developing hybrid sensors for the simultaneous measurement of pressure and shear stress. The key feature for the success of the proposed hybrid sensor array is the ability to deposit Cu-Ni alloy with proper composition (55 - 45) on a silicon wafer to form a strain gage. This alloy strain gage replaces the normally used Si strain gages in MEMS, which are highly nonlinear and temperature dependent. The copper nickel, with proper composition (55 - 45), was successfully deposited on a silicon wafer with a few trials during this period of the project. Pictures of the Cu-Ni alloy strain gage and the x-ray spectra indicating the composition are shown. The planned tests are also reviewed.

A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

PubMed

Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

2012-07-01

We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Post exposure bake unit equipped with wafer-shape compensation technology

NASA Astrophysics Data System (ADS)

Goto, Shigehiro; Morita, Akihiko; Oyama, Kenichi; Hori, Shimpei; Matsuchika, Keiji; Taniguchi, Hideyuki

2007-03-01

In 193nm lithography, it is well known that Critical Dimension Uniformity (CDU) within wafer is especially influenced by temperature variation during Post Exposure Bake (PEB) process. This temperature variation has been considered to be caused by the hot plate unit, and improvement of temperature uniformity within hot plate itself has been focused to achieve higher CDU. However, we have found that the impact of the wafer shape on temperature uniformity within wafer can not be ignored when the conventional PEB processing system is applied to an advanced resist technology. There are two factors concerned with the wafer shape. First, gravity force of the wafer itself generates wafer shape bending because wafer is simply supported by a few proximity gaps on the conventional hot plate. Next, through the semiconductor manufacturing process, wafer is gradually warped due to the difference of the surface stress between silicon and deposited film layers (Ex. Si-Oxide, Si-Nitride). Therefore, the variation of the clearance between wafer backside and hot plate surface leads to non-uniform thermal conductivity within wafer during PEB processing, and eventually impacts on the CDU within wafer. To overcome this problem concerned with wafer shape during PEB processing, we have developed the new hot plate equipped with the wafer shape compensation technology. As a result of evaluation, we have confirmed that this new PEB system has an advantage not only for warped wafer but also for flat (bare) wafer.

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Collegial Activity Learning between Heterogeneous Sensors.

PubMed

Feuz, Kyle D; Cook, Diane J

2017-11-01

Activity recognition algorithms have matured and become more ubiquitous in recent years. However, these algorithms are typically customized for a particular sensor platform. In this paper we introduce PECO, a Personalized activity ECOsystem, that transfers learned activity information seamlessly between sensor platforms in real time so that any available sensor can continue to track activities without requiring its own extensive labeled training data. We introduce a multi-view transfer learning algorithm that facilitates this information handoff between sensor platforms and provide theoretical performance bounds for the algorithm. In addition, we empirically evaluate PECO using datasets that utilize heterogeneous sensor platforms to perform activity recognition. These results indicate that not only can activity recognition algorithms transfer important information to new sensor platforms, but any number of platforms can work together as colleagues to boost performance.

Forming electrical interconnections through semiconductor wafers

NASA Technical Reports Server (NTRS)

Anthony, T. R.

1981-01-01

An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

Heating device for semiconductor wafers

DOEpatents

Vosen, Steven R.

1999-01-01

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Noncontact sheet resistance measurement technique for wafer inspection

NASA Astrophysics Data System (ADS)

Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

1995-12-01

A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

Activity Recognition on Streaming Sensor Data.

PubMed

Krishnan, Narayanan C; Cook, Diane J

2014-02-01

Many real-world applications that focus on addressing needs of a human, require information about the activities being performed by the human in real-time. While advances in pervasive computing have lead to the development of wireless and non-intrusive sensors that can capture the necessary activity information, current activity recognition approaches have so far experimented on either a scripted or pre-segmented sequence of sensor events related to activities. In this paper we propose and evaluate a sliding window based approach to perform activity recognition in an on line or streaming fashion; recognizing activities as and when new sensor events are recorded. To account for the fact that different activities can be best characterized by different window lengths of sensor events, we incorporate the time decay and mutual information based weighting of sensor events within a window. Additional contextual information in the form of the previous activity and the activity of the previous window is also appended to the feature describing a sensor window. The experiments conducted to evaluate these techniques on real-world smart home datasets suggests that combining mutual information based weighting of sensor events and adding past contextual information into the feature leads to best performance for streaming activity recognition.

Comparing the transient response of a resistive-type sensor with a thin film thermocouple during the post-exposure bake process

NASA Astrophysics Data System (ADS)

Kreider, Kenneth G.; DeWitt, David P.; Fowler, Joel B.; Proctor, James E.; Kimes, William A.; Ripple, Dean C.; Tsai, Benjamin K.

2004-04-01

Recent studies on dynamic temperature profiling and lithographic performance modeling of the post-exposure bake (PEB) process have demonstrated that the rate of heating and cooling may have an important influence on resist lithographic response. Measuring the transient surface temperature during the heating or cooling process with such accuracy can only be assured if the sensors embedded in or attached to the test wafer do not affect the temperature distribution in the bare wafer. In this paper we report on an experimental and analytical study to compare the transient response of embedded platinum resistance thermometer (PRT) sensors with surface-deposited, thin-film thermocouples (TFTC). The TFTCs on silicon wafers have been developed at NIST to measure wafer temperatures in other semiconductor thermal processes. Experiments are performed on a test bed built from a commercial, fab-qualified module with hot and chill plates using wafers that have been instrumented with calibrated type-E (NiCr/CuNi) TFTCs and commercial PRTs. Time constants were determined from an energy-balance analysis fitting the temperature-time derivative to the wafer temperature during the heating and cooling processes. The time constants for instrumented wafers ranged from 4.6 s to 5.1 s on heating for both the TFTC and PRT sensors, with an average difference less than 0.1 s between the TFTCs and PRTs and slightly greater differences on cooling.

Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

Heating device for semiconductor wafers

DOEpatents

Vosen, S.R.

1999-07-27

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

A thermal microprobe fabricated with wafer-stage processing

NASA Astrophysics Data System (ADS)

Zhang, Yongxia; Zhang, Yanwei; Blaser, Juliana; Sriram, T. S.; Enver, Ahsan; Marcus, R. B.

1998-05-01

A thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an atomic force microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. For high resolution temperature sensing it is essential that the junction be confined to a short distance at the AFM tip. This confinement is achieved by a controlled photoresist coating process. Experiment prototypes have been made with an Au/Pd junction confined to within 0.5 μm of the tip, with the two metals separated elsewhere by a thin insulating oxide layer. Processing begins with double-polished, n-type, 4 in. diameter, 300-μm-thick silicon wafers. Atomically sharp probe tips are formed by a combination of dry and wet chemical etching, and oxidation sharpening. The metal layers are sputtering deposited and the cantilevers are released by a combination of KOH and dry etching. A resistively heated calibration device was made for temperature calibration of the thermal microprobe over the temperature range 25-110 °C. Over this range the thermal outputs of two microprobes are 4.5 and 5.6 μV/K and is linear. Thermal and topographical images are also obtained from a heated tungsten thin film fuse.

Patterned wafer geometry grouping for improved overlay control

NASA Astrophysics Data System (ADS)

Lee, Honggoo; Han, Sangjun; Woo, Jaeson; Park, Junbeom; Song, Changrock; Anis, Fatima; Vukkadala, Pradeep; Jeon, Sanghuck; Choi, DongSub; Huang, Kevin; Heo, Hoyoung; Smith, Mark D.; Robinson, John C.

2017-03-01

Process-induced overlay errors from outside the litho cell have become a significant contributor to the overlay error budget including non-uniform wafer stress. Previous studies have shown the correlation between process-induced stress and overlay and the opportunity for improvement in process control, including the use of patterned wafer geometry (PWG) metrology to reduce stress-induced overlay signatures. Key challenges of volume semiconductor manufacturing are how to improve not only the magnitude of these signatures, but also the wafer to wafer variability. This work involves a novel technique of using PWG metrology to provide improved litho-control by wafer-level grouping based on incoming process induced overlay, relevant for both 3D NAND and DRAM. Examples shown in this study are from 19 nm DRAM manufacturing.

High throughput wafer defect monitor for integrated metrology applications in photolithography

NASA Astrophysics Data System (ADS)

Rao, Nagaraja; Kinney, Patrick; Gupta, Anand

2008-03-01

The traditional approach to semiconductor wafer inspection is based on the use of stand-alone metrology tools, which while highly sensitive, are large, expensive and slow, requiring inspection to be performed off-line and on a lot sampling basis. Due to the long cycle times and sparse sampling, the current wafer inspection approach is not suited to rapid detection of process excursions that affect yield. The semiconductor industry is gradually moving towards deploying integrated metrology tools for real-time "monitoring" of product wafers during the manufacturing process. Integrated metrology aims to provide end-users with rapid feedback of problems during the manufacturing process, and the benefit of increased yield, and reduced rework and scrap. The approach of monitoring 100% of the wafers being processed requires some trade-off in sensitivity compared to traditional standalone metrology tools, but not by much. This paper describes a compact, low-cost wafer defect monitor suitable for integrated metrology applications and capable of detecting submicron defects on semiconductor wafers at an inspection rate of about 10 seconds per wafer (or 360 wafers per hour). The wafer monitor uses a whole wafer imaging approach to detect defects on both un-patterned and patterned wafers. Laboratory tests with a prototype system have demonstrated sensitivity down to 0.3 µm on un-patterned wafers and down to 1 µm on patterned wafers, at inspection rates of 10 seconds per wafer. An ideal application for this technology is preventing photolithography defects such as "hot spots" by implementing a wafer backside monitoring step prior to exposing wafers in the lithography step.

A front-end wafer-level microsystem packaging technique with micro-cap array

NASA Astrophysics Data System (ADS)

Chiang, Yuh-Min

2002-09-01

The back-end packaging process is the remaining challenge for the micromachining industry to commercialize microsystem technology (MST) devices at low cost. This dissertation presents a novel wafer level protection technique as a final step of the front-end fabrication process for MSTs. It facilitates improved manufacturing throughput and automation in package assembly, wafer level testing of devices, and enhanced device performance. The method involves the use of a wafer-sized micro-cap array, which consists of an assortment of small caps micro-molded onto a material with adjustable shapes and sizes to serve as protective structures against the hostile environments during packaging. The micro-cap array is first constructed by a micromachining process with micro-molding technique, then sealed to the device wafer at wafer level. Epoxy-based wafer-level micro cap array has been successfully fabricated and showed good compatibility with conventional back-end packaging processes. An adhesive transfer technique was demonstrated to seal the micro cap array with a MEMS device wafer. No damage or gross leak was observed while wafer dicing or later during a gross leak test. Applications of the micro cap array are demonstrated on MEMS, microactuators fabricated using CRONOS MUMPS process. Depending on the application needs, the micro-molded cap can be designed and modified to facilitate additional component functions, such as optical, electrical, mechanical, and chemical functions, which are not easily achieved in the device by traditional means. Successful fabrication of a micro cap array comprised with microlenses can provide active functions as well as passive protection. An optical tweezer array could be one possibility for applications of a micro cap with microlenses. The micro cap itself could serve as micro well for DNA or bacteria amplification as well.

Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickrell, Gary; Scott, Brian; Wang, Anbo

2013-12-31

gasifier facility in Terre Haute, Indiana. Due to business conditions at industrial partner and several logistical problems, this field test was not successful. An alternative high-temperature sensing system using sapphire wafer-based extrinsic Fabry-Perot interferometry was then developed as a significant improvement over the BPDI solution. From June 2006 to June 2008, three consecutive field tests were performed with the new sapphire wafer sensors at the TECO coal gasifier in Tampa, Florida. One of the sensors survived in the industrial coal gasifier for 7 months, over which time the existing thermocouples were replaced twice. The outcome of these TECO field tests suggests that the sapphire wafer sensor has very good potential to be commercialized. However packaging and sensor protection issues need additional development. During Phase III, several major improvements in the design and fabrication process of the sensor have been achieved through experiments and theoretical analysis. Studies on the property of the key components in the sensor head, including the sapphire fiber and sapphire wafer, were also conducted, for a better understanding of the sensor behavior. A final design based on all knowledge and experience has been developed, free of any issues encountered during the entire research. Sensors with this design performed well as expected in lab long-term tests, and were deployed in the sensing probe of the final coal-gasifier field test. Sensor packaging and protection was improved through materials engineering through testing of packaging designs in two blank probe packaging tests at Eastman Chemical in Kingsport, TN. Performance analysis of the blank probe packaging resulted in improve package designs culminating in a 3rd generation probe packaging utilized for the full field test of the sapphire optical sensor and materials designed sensor packaging.« less

Wafer hot spot identification through advanced photomask characterization techniques

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; McMurran, Jeff; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2016-10-01

As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer's needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.

Optima XE Single Wafer High Energy Ion Implanter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Satoh, Shu; Ferrara, Joseph; Bell, Edward

2008-11-03

The Optima XE is the first production worthy single wafer high energy implanter. The new system combines a state-of-art single wafer endstation capable of throughputs in excess of 400 wafers/hour with a production-proven RF linear accelerator technology. Axcelis has been evolving and refining RF Linac technology since the introduction of the NV1000 in 1986. The Optima XE provides production worthy beam currents up to energies of 1.2 MeV for P{sup +}, 2.9 MeV for P{sup ++}, and 1.5 MeV for B{sup +}. Energies as low as 10 keV and tilt angles as high as 45 degrees are also available., allowingmore » the implanter to be used for a wide variety of traditional medium current implants to ensure high equipment utilization. The single wafer endstation provides precise implant angle control across wafer and wafer to wafer. In addition, Optima XE's unique dose control system allows compensation of photoresist outgassing effects without relying on traditional pressure-based methods. We describe the specific features, angle control and dosimetry of the Optima XE and their applications in addressing the ever-tightening demands for more precise process controls and higher productivity.« less

Micro-miniature gas chromatograph column disposed in silicon wafers

DOEpatents

Yu, Conrad M.

2000-01-01

A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

Stylus type MEMS texture sensor covered with corrugated diaphragm

NASA Astrophysics Data System (ADS)

Tsukamoto, Takashiro; Asao, Hideaki; Tanaka, Shuji

2017-09-01

In this paper, a stylus type MEMS texture sensor covered with a corrugated palylene diaphragm, which prevent debris from jamming into the sensor without significant degradation of sensitivity and bandwidth, was reported. A new fabrication process using a lost-foil method to make the corrugated diaphragm on a 3-axis piezoresistive force sensor at wafer level has been developed. The texture sensor could detect the surface microstructure as small as about 10 \

Wafer-level packaging with compression-controlled seal ring bonding

DOEpatents

Farino, Anthony J

2013-11-05

A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Applications of the silicon wafer direct-bonding technique to electron devices

NASA Astrophysics Data System (ADS)

Furukawa, K.; Nakagawa, A.

1990-01-01

A silicon wafer direct-bonding (SDB) technique has been developed. A pair of bare silicon wafers, as well as an oxidized wafer pair, are bonded throughout the wafer surfaces without any bonding material. Conventional semiconductor device processes can be used for the bonded wafers, since the bonded interface is stable thermally, chemically, mechanically and electrically. Therefore, the SDB technique is very attractive, and has been applied to several kinds of electron devices. Bare silicon to bare silicon bonding is an alternative for epitaxial growth. A thick, high quality and high resistivity layer on a low resistivity substrate was obtained without autodoping. 1800 V insulated gate bipolar transistors were developed using these SDB wafers. No electrical resistance was observed at the bonded bare silicon interfaces. If oxidized wafers are bonded, the two wafers are electrically isolated, providing silicon on insulator (SOI) wafers. Dielectrically isolated photodiode arrays were fabricated on the SOI wafers and 500 V power IC's are now being developed.

Stress modeling of microdiaphragm pressure sensors

NASA Technical Reports Server (NTRS)

Tack, P. C.; Busta, H. H.

1986-01-01

A finite element program analysis was used to model the stress distribution of two monocrystalline silicon diaphragm pressure sensors. One configuration consists of an anisotropically backside etched diaphragm into a 250 micron thick, (100) oriented, silicon wafer. The diaphragm and total chip dimensions are given. The device is rigidly clamped on the back to a support substrate. Another configuration consists of a monocrystalline, (100), microdiaphragm which is formed on top of the wafer and whose area is reduced by a factor of 25 over the first configuration. The diaphragm is rigidly clamped to the silicon wafer. The stresses were calculated at a gauge pressure of 300 mm Hg and used to estimate the piezoresistive responses of resistor elements which were placed parallel and perpendicular near the diaphragm edges.

Wafer-level vacuum/hermetic packaging technologies for MEMS

NASA Astrophysics Data System (ADS)

Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

2010-02-01

An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

Laser furnace and method for zone refining of semiconductor wafers

NASA Technical Reports Server (NTRS)

Griner, Donald B. (Inventor); zur Burg, Frederick W. (Inventor); Penn, Wayne M. (Inventor)

1988-01-01

A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

Active spectral sensor evaluation under varying conditions

USDA-ARS?s Scientific Manuscript database

Plant stress has been estimated by spectral signature using both passive and active sensors. As optical sensors measure reflected light from a target, changes in illumination characteristics critically affect sensor response. Active sensors are of benefit in minimizing uncontrolled illumination effe...

Novel wafer stepper with violet LED light source

NASA Astrophysics Data System (ADS)

Ting, Yung-Chiang; Shy, Shyi-Long

2014-03-01

Novel wafer stepper by using contact or proximity printing will be developed, using violet LED light source to replace Hg Arc. lamp or laser. Mirror, filter and condenser lens for Hg Arc. Lamp or laser and reduction lens for projection printing can be discarded. Reliability and manufacturing cost of wafer stepper can be improved. Exposure result by using IP3600 resist and wafer stepper with violet LED light source (wave-length 360nm to 410 nm) will be obtained. This novel wafer stepper can be used for 3DIC, MEMS and bio-chip lithography application by using thin and thick resist with sub-micron to 100 micron thickness.

Genesis Ultrapure Water Megasonic Wafer Spin Cleaner

NASA Technical Reports Server (NTRS)

Allton, Judith H.; Stansbery, Eileen K.; Calaway, Michael J.; Rodriquez, Melissa C.

2013-01-01

A device removes, with high precision, the majority of surface particle contamination greater than 1-micron-diameter in size from ultrapure semiconductor wafer materials containing implanted solar wind samples returned by NASA's Genesis mission. This cleaning device uses a 1.5-liter/minute flowing stream of heated ultrapure water (UPW) with 1- MHz oscillating megasonic pulse energy focused at 3 to 5 mm away from the wafer surface spinning at 1,000 to 10,000 RPM, depending on sample size. The surface particle contamination is removed by three processes: flowing UPW, megasonic cavitations, and centripetal force from the spinning wafer. The device can also dry the wafer fragment after UPW/megasonic cleaning by continuing to spin the wafer in the cleaning chamber, which is purged with flowing ultrapure nitrogen gas at 65 psi (.448 kPa). The cleaner also uses three types of vacuum chucks that can accommodate all Genesis-flown array fragments in any dimensional shape between 3 and 100 mm in diameter. A sample vacuum chuck, and the manufactured UPW/megasonic nozzle holder, replace the human deficiencies by maintaining a consistent distance between the nozzle and wafer surface as well as allowing for longer cleaning time. The 3- to 5-mm critical distance is important for the ability to remove particles by megasonic cavitations. The increased UPW sonication time and exposure to heated UPW improve the removal of 1- to 5-micron-sized particles.

CZT sensors for Computed Tomography: from crystal growth to image quality

NASA Astrophysics Data System (ADS)

Iniewski, K.

2016-12-01

Recent advances in Traveling Heater Method (THM) growth and device fabrication that require additional processing steps have enabled to dramatically improve hole transport properties and reduce polarization effects in Cadmium Zinc Telluride (CZT) material. As a result high flux operation of CZT sensors at rates in excess of 200 Mcps/mm2 is now possible and has enabled multiple medical imaging companies to start building prototype Computed Tomography (CT) scanners. CZT sensors are also finding new commercial applications in non-destructive testing (NDT) and baggage scanning. In order to prepare for high volume commercial production we are moving from individual tile processing to whole wafer processing using silicon methodologies, such as waxless processing, cassette based/touchless wafer handling. We have been developing parametric level screening at the wafer stage to ensure high wafer quality before detector fabrication in order to maximize production yields. These process improvements enable us, and other CZT manufacturers who pursue similar developments, to provide high volume production for photon counting applications in an economically feasible manner. CZT sensors are capable of delivering both high count rates and high-resolution spectroscopic performance, although it is challenging to achieve both of these attributes simultaneously. The paper discusses material challenges, detector design trade-offs and ASIC architectures required to build cost-effective CZT based detection systems. Photon counting ASICs are essential part of the integrated module platforms as charge-sensitive electronics needs to deal with charge-sharing and pile-up effects.

Quantitative phase measurement for wafer-level optics

NASA Astrophysics Data System (ADS)

Qu, Weijuan; Wen, Yongfu; Wang, Zhaomin; Yang, Fang; Huang, Lei; Zuo, Chao

2015-07-01

Wafer-level-optics now is widely used in smart phone camera, mobile video conferencing or in medical equipment that require tiny cameras. Extracting quantitative phase information has received increased interest in order to quantify the quality of manufactured wafer-level-optics, detect defective devices before packaging, and provide feedback for manufacturing process control, all at the wafer-level for high-throughput microfabrication. We demonstrate two phase imaging methods, digital holographic microscopy (DHM) and Transport-of-Intensity Equation (TIE) to measure the phase of the wafer-level lenses. DHM is a laser-based interferometric method based on interference of two wavefronts. It can perform a phase measurement in a single shot. While a minimum of two measurements of the spatial intensity of the optical wave in closely spaced planes perpendicular to the direction of propagation are needed to do the direct phase retrieval by solving a second-order differential equation, i.e., with a non-iterative deterministic algorithm from intensity measurements using the Transport-of-Intensity Equation (TIE). But TIE is a non-interferometric method, thus can be applied to partial-coherence light. We demonstrated the capability and disability for the two phase measurement methods for wafer-level optics inspection.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, Theodoer F.

1995-01-01

Apparatus for measuring thicknesses of semiconductor wafers, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light.

Study of temperature distributions in wafer exposure process

NASA Astrophysics Data System (ADS)

Lin, Zone-Ching; Wu, Wen-Jang

During the exposure process of photolithography, wafer absorbs the exposure energy, which results in rising temperature and the phenomenon of thermal expansion. This phenomenon was often neglected due to its limited effect in the previous generation of process. However, in the new generation of process, it may very likely become a factor to be considered. In this paper, the finite element model for analyzing the transient behavior of the distribution of wafer temperature during exposure was established under the assumption that the wafer was clamped by a vacuum chuck without warpage. The model is capable of simulating the distribution of the wafer temperature under different exposure conditions. The flowchart of analysis begins with the simulation of transient behavior in a single exposure region to the variation of exposure energy, interval of exposure locations and interval of exposure time under continuous exposure to investigate the distribution of wafer temperature. The simulation results indicate that widening the interval of exposure locations has a greater impact in improving the distribution of wafer temperature than extending the interval of exposure time between neighboring image fields. Besides, as long as the distance between the field center locations of two neighboring exposure regions exceeds the straight distance equals to three image fields wide, the interacting thermal effect during wafer exposure can be ignored. The analysis flow proposed in this paper can serve as a supporting reference tool for engineers in planning exposure paths.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, T.F.

1995-03-07

Apparatus for measuring thicknesses of semiconductor wafers is discussed, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light. 4 figs.

Wafer edge overlay control solution for N7 and beyond

NASA Astrophysics Data System (ADS)

van Haren, Richard; Calado, Victor; van Dijk, Leon; Hermans, Jan; Kumar, Kaushik; Yamashita, Fumiko

2018-03-01

Historically, the on-product overlay performance close to the wafer edge is lagging with respect to the inner part of the wafer. The reason for this is that wafer processing is less controlled close to the wafer edge as opposed to the rest of the wafer. It is generally accepted that Chemical Vapor Deposition (CVD) of stressed layers that cause wafer warp, wafer table contamination, Chemical Mechanical Polishing (CMP), and Reactive Ion Etch (RIE) may deteriorate the overlay performance and/or registration close to the wafer edge. For the N7 technology node and beyond, it is anticipated that the tight on-product overlay specification is required across the full wafer which includes the edge region. In this work, we highlight one contributor that may negatively impact the on-product overlay performance, namely the etch step. The focus will be mainly on the wafer edge region but the remaining part of the wafer is considered as well. Three use-cases are examined: multiple Litho-Etch steps (LEn), contact hole layer etch, and the copper dual damascene etch. We characterize the etch contribution by considering the overlay measurement after resist development inspect (ADI) and after etch inspect (AEI). We show that the Yieldstar diffraction based overlay (μDBO) measurements can be utilized to characterize the etch contribution to the overlay budget. The effects of target asymmetry as well as overlay shifts are considered and compared with SEM measurements. Based on the results above, we propose a control solution aiming to reduce or even eliminate the delta between ADI and AEI. By doing so, target/mark to device offsets due to etch might be avoided.

Embedded and conventional ultrasonic sensors for monitoring acoustic emission during thermal fatigue

NASA Astrophysics Data System (ADS)

Trujillo, Blaine; Zagrai, Andrei

2016-04-01

Acoustic emission is widely used for monitoring pressure vessels, pipes, critical infrastructure, as well as land, sea and air vehicles. It is one of dominant approaches to explore material degradation under fatigue and events leading to material fracture. Addressing a recent interest in structural health monitoring of space vehicles, a need has emerged to evaluate material deterioration due to thermal fatigue during spacecraft atmospheric reentry. Thermal fatigue experiments were conducted, in which aluminum plates were subjected to localized heating and acoustic emission was monitoring by embedded and conventional acoustic emission sensors positioned at various distances from a heat source. At the same time, surface temperature of aluminum plates was monitored using an IR camera. Acoustic emission counts collected by embedded sensors were compared to counts measured with conventional acoustic emission sensors. Both types of sensors show noticeable increase of acoustic emission activity as localized heating source was applied to aluminum plates. Experimental data demonstrate correlation between temperature increase on the surface of the plates and increase in measured acoustic emission activity. It is concluded that under particular conditions, embedded piezoelectric wafer active sensors can be used for acoustic emission monitoring of thermally-induced structural degradation.

Active Targets For Capacitive Proximity Sensors

NASA Technical Reports Server (NTRS)

Jenstrom, Del T.; Mcconnell, Robert L.

1994-01-01

Lightweight, low-power active targets devised for use with improved capacitive proximity sensors described in "Capacitive Proximity Sensor Has Longer Range" (GSC-13377), and "Capacitive Proximity Sensors With Additional Driven Shields" (GSC-13475). Active targets are short-distance electrostatic beacons; they generate known alternating electro-static fields used for alignment and/or to measure distances.

Electrochemical method for defect delineation in silicon-on-insulator wafers

DOEpatents

Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module

PubMed Central

Pandya, H. J.; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P.

2014-01-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400–1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen. PMID:24855449

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

PubMed

Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

2014-03-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

Modelling deformation and fracture in confectionery wafers

NASA Astrophysics Data System (ADS)

Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John

2015-01-01

The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

Development of megasonic cleaning for silicon wafers

NASA Technical Reports Server (NTRS)

Mayer, A.

1980-01-01

A cleaning and drying system for processing at least 2500 three in. diameter wafers per hour was developed with a reduction in process cost. The system consists of an ammonia hydrogen peroxide bath in which both surfaces of 3/32 in. spaced, ion implanted wafers are cleaned in quartz carriers moved on a belt past two pairs of megasonic transducers. The wafers are dried in the novel room temperature, high velocity air dryer in the same carriers used for annealing. A new laser scanner was used effectively to monitor the cleaning ability on a sampling basis.

Modelling deformation and fracture in confectionery wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon

2015-01-22

The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which wasmore » then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.« less

Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers

NASA Technical Reports Server (NTRS)

Anthony, Thomas R. (Inventor)

1983-01-01

Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

PubMed

Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

2009-05-25

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

A Wafer Transfer Technology for MEMS Adaptive Optics

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean V.

2001-01-01

Adaptive optics systems require the combination of several advanced technologies such as precision optics, wavefront sensors, deformable mirrors, and lasers with high-speed control systems. The deformable mirror with a continuous membrane is a key component of these systems. This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. This technology is developed for the fabrication of a compact deformable mirror with a continuous facet. A 1 (mu)m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.5 (mu)m shows a vertical deflection of 0.37 (mu)m at 55 V.

Guided ultrasonic wave beam skew in silicon wafers

NASA Astrophysics Data System (ADS)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

Evaluation of accelerometer based multi-sensor versus single-sensor activity recognition systems.

PubMed

Gao, Lei; Bourke, A K; Nelson, John

2014-06-01

Physical activity has a positive impact on people's well-being and it had been shown to decrease the occurrence of chronic diseases in the older adult population. To date, a substantial amount of research studies exist, which focus on activity recognition using inertial sensors. Many of these studies adopt a single sensor approach and focus on proposing novel features combined with complex classifiers to improve the overall recognition accuracy. In addition, the implementation of the advanced feature extraction algorithms and the complex classifiers exceed the computing ability of most current wearable sensor platforms. This paper proposes a method to adopt multiple sensors on distributed body locations to overcome this problem. The objective of the proposed system is to achieve higher recognition accuracy with "light-weight" signal processing algorithms, which run on a distributed computing based sensor system comprised of computationally efficient nodes. For analysing and evaluating the multi-sensor system, eight subjects were recruited to perform eight normal scripted activities in different life scenarios, each repeated three times. Thus a total of 192 activities were recorded resulting in 864 separate annotated activity states. The methods for designing such a multi-sensor system required consideration of the following: signal pre-processing algorithms, sampling rate, feature selection and classifier selection. Each has been investigated and the most appropriate approach is selected to achieve a trade-off between recognition accuracy and computing execution time. A comparison of six different systems, which employ single or multiple sensors, is presented. The experimental results illustrate that the proposed multi-sensor system can achieve an overall recognition accuracy of 96.4% by adopting the mean and variance features, using the Decision Tree classifier. The results demonstrate that elaborate classifiers and feature sets are not required to achieve high

Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene

DTIC Science & Technology

2014-08-01

Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene by Eugene Zakar, Wayne Churaman, Collin Becker, Bernard Rod, Luke...Laboratory Adelphi, MD 20783-1138 ARL-TR-7025 August 2014 Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene...Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6

Cohesive zone model for direct silicon wafer bonding

NASA Astrophysics Data System (ADS)

Kubair, D. V.; Spearing, S. M.

2007-05-01

Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

Wafer hot spot identification through advanced photomask characterization techniques: part 2

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; Cho, Young; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2017-03-01

Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for mask end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on sub-resolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. To overcome the limitation of 1D metrics, there are numerous on-going industry efforts to better define wafer-predictive metrics through both standard mask metrology and aerial CD methods. Even with these improvements, the industry continues to struggle to define useful correlative metrics that link the mask to final device performance. In part 1 of this work, we utilized advanced mask pattern characterization techniques to extract potential hot spots on the mask and link them, theoretically, to issues with final wafer performance. In this paper, part 2, we complete the work by verifying these techniques at wafer level. The test vehicle (TV) that was used for hot spot detection on the mask in part 1 will be used to expose wafers. The results will be used to verify the mask-level predictions. Finally, wafer performance with predicted and verified mask/wafer condition will be shown as the result of advanced mask characterization. The goal is to maximize mask end user yield through mask-wafer technology harmonization. This harmonization will provide the necessary feedback to determine optimum design, mask specifications, and mask-making conditions for optimal wafer process margin.

Wafering economies for industrialization from a wafer manufacturer's viewpoint

NASA Technical Reports Server (NTRS)

Rosenfield, T. P.; Fuerst, F. P.

1982-01-01

The key technical limitations which inhibit the lowering of value-added costs for state-of-the-art wafering techniques are assessed. From the best experimental results to date, a projection was made to identify those parts of each system which need to be developed in order to meet or improve upon the value-added cost reduction necessary for $0.70/Wp photovoltaics modules.

Activity recognition using dynamic multiple sensor fusion in body sensor networks.

PubMed

Gao, Lei; Bourke, Alan K; Nelson, John

2012-01-01

Multiple sensor fusion is a main research direction for activity recognition. However, there are two challenges in those systems: the energy consumption due to the wireless transmission and the classifier design because of the dynamic feature vector. This paper proposes a multi-sensor fusion framework, which consists of the sensor selection module and the hierarchical classifier. The sensor selection module adopts the convex optimization to select the sensor subset in real time. The hierarchical classifier combines the Decision Tree classifier with the Naïve Bayes classifier. The dataset collected from 8 subjects, who performed 8 scenario activities, was used to evaluate the proposed system. The results show that the proposed system can obviously reduce the energy consumption while guaranteeing the recognition accuracy.

Fabrication of uniform nanoscale cavities via silicon direct wafer bonding.

PubMed

Thomson, Stephen R D; Perron, Justin K; Kimball, Mark O; Mehta, Sarabjit; Gasparini, Francis M

2014-01-09

Measurements of the heat capacity and superfluid fraction of confined (4)He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments(3), bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data. Exceptionally flat, 5 cm diameter, 375 µm thick Si wafers with about 1 µm variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned(2) in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water(4). The wafers are bonded at RT and then annealed at ~1,100 °C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale.

Compensating measured intra-wafer ring oscillator stage delay with intra-wafer exposure dose corrections

NASA Astrophysics Data System (ADS)

Verhaegen, Staf; Nackaerts, Axel; Dusa, Mircea; Carpaij, Rene; Vandenberghe, Geert; Finders, Jo

2006-03-01

The purpose of this paper is to use measurements on real working devices to derive more information than typically measured by the classic line-width measurement techniques. The first part of the paper will discuss the principle of the measurements with a ring oscillator, a circuit used to measure the speed of elementary logic gates. These measurements contribute to the understanding of the exact timing dependencies in circuits, which is of utmost importance for the design and simulation of these circuits. When connecting an odd number of digital inverting stages in a ring, the circuit has no stable digital state but acts as an analog oscillator with the oscillation frequency dependent on the analog propagation delay of the signals through the stages. By varying some conditions during a litho step, the delay change caused by the process condition change can be measured very accurately. The response of the ring oscillator delay to exposure dose is measured and presented in this paper together with a comparison of measured line-width values of the poly gate lines. The second part of the paper will focus on improving the intra-wafer variation of the stage delay. A number of ring oscillators are put in a design at different slit and scan locations. 200mm wafers are processed with 48 full dies present. From the intra-wafer delay fingerprint and the dose sensitivity of the delay an intra-wafer dose correction, also called a dose recipe, is calculated. This dose recipe is used on the scanner to compensate for effects that are the root cause for the delay profile; including reticle and processing such as track, etch and annealing.

Characteristics of active spectral sensor for plant sensing

USDA-ARS?s Scientific Manuscript database

Plant stress has been estimated by spectral signature using both passive and active sensors. As optical sensors measure reflected light from a target, changes in illumination conditions critically affect sensor response. Active spectral sensors minimize the illumination effects by producing their ...

Reticle variation influence on manufacturing line and wafer device performance

NASA Astrophysics Data System (ADS)

Nistler, John L.; Spurlock, Kyle

1994-01-01

Cost effective manufacturing of devices at 0.5, 0.35 and 0.25μm geometries will be highly dependent on a companys' ability to obtain an economic return on investment. The high capital investment in equipment and facilities, not to mention the related chemical and wafer costs, for producing 200mm silicon wafers requires aspects of wafer processing to be tightly controlled. Reduction in errors and enhanced yield management requires early correction or avoidance of reticle problems. It is becoming increasingly important to recognize and track all pertinent factors impacting both the technical and financial viability of a wafer manufacturing fabrication area. Reticle related effects on wafer manufacturing can be costly and affect the total quality perceived by the device customer.

Silicon wafer-based tandem cells: The ultimate photovoltaic solution?

NASA Astrophysics Data System (ADS)

Green, Martin A.

2014-03-01

Recent large price reductions with wafer-based cells have increased the difficulty of dislodging silicon solar cell technology from its dominant market position. With market leaders expected to be manufacturing modules above 16% efficiency at 0.36/Watt by 2017, even the cost per unit area (60-70/m2) will be difficult for any thin-film photovoltaic technology to significantly undercut. This may make dislodgement likely only by appreciably higher energy conversion efficiency approaches. A silicon wafer-based cell able to capitalize on on-going cost reductions within the mainstream industry, but with an appreciably higher than present efficiency, might therefore provide the ultimate PV solution. With average selling prices of 156 mm quasi-square monocrystalline Si photovoltaic wafers recently approaching 1 (per wafer), wafers now provide clean, low cost templates for overgrowth of thin, wider bandgap high performance cells, nearly doubling silicon's ultimate efficiency potential. The range of possible Si-based tandem approaches is reviewed together with recent results and ultimate prospects.

Characterization of wafer-level bonded hermetic packages using optical leak detection

NASA Astrophysics Data System (ADS)

Duan, Ani; Wang, Kaiying; Aasmundtveit, Knut; Hoivik, Nils

2009-07-01

For MEMS devices required to be operated in a hermetic environment, one of the main reliability issues is related to the packaging methods applied. In this paper, an optical method for testing low volume hermetic cavities formed by anodic bonding between glass and SOI (silicon on insulator) wafer is presented. Several different cavity-geometry structures have been designed, fabricated and applied to monitor the hermeticity of wafer level anodic bonding. SOI wafer was used as the cap wafer on which the different-geometry structures were fabricated using standard MEMS technology. The test cavities were bonded using SOI wafers to glass wafers at 400C and 1000mbar pressure inside a vacuum bonding chamber. The bonding voltage varies from 200V to 600V. The bonding strength between glass and SOI wafer was mechanically tested using shear tester. The deformation amplitudes of the cavity cap surface were monitored by using an optical interferometer. The hermeticity of the glass-to-SOI wafer level bonding was characterized through observing the surface deformation in a 6 months period in atmospheric environment. We have observed a relatively stable micro vacuum-cavity.

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

NASA Astrophysics Data System (ADS)

Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

2014-08-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

From magic to technology: materials integration by wafer bonding

NASA Astrophysics Data System (ADS)

Dragoi, Viorel

2006-02-01

Wafer bonding became in the last decade a very powerful technology for MEMS/MOEMS manufacturing. Being able to offer a solution to overcome some problems of the standard processes used for materials integration (e.g. epitaxy, thin films deposition), wafer bonding is nowadays considered an important item in the MEMS engineer toolbox. Different principles governing the wafer bonding processes will be reviewed in this paper. Various types of applications will be presented as examples.

Mask-to-wafer alignment system

DOEpatents

Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

2003-11-04

A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

WaferOptics® mass volume production and reliability

NASA Astrophysics Data System (ADS)

Wolterink, E.; Demeyer, K.

2010-05-01

The Anteryon WaferOptics® Technology platform contains imaging optics designs, materials, metrologies and combined with wafer level based Semicon & MEMS production methods. WaferOptics® first required complete new system engineering. This system closes the loop between application requirement specifications, Anteryon product specification, Monte Carlo Analysis, process windows, process controls and supply reject criteria. Regarding the Anteryon product Integrated Lens Stack (ILS), new design rules, test methods and control systems were assessed, implemented, validated and customer released for mass production. This includes novel reflowable materials, mastering process, replication, bonding, dicing, assembly, metrology, reliability programs and quality assurance systems. Many of Design of Experiments were performed to assess correlations between optical performance parameters and machine settings of all process steps. Lens metrologies such as FFL, BFL, and MTF were adapted for wafer level production and wafer mapping was introduced for yield management. Test methods for screening and validating suitable optical materials were designed. Critical failure modes such as delamination and popcorning were assessed and modeled with FEM. Anteryon successfully managed to integrate the different technologies starting from single prototypes to high yield mass volume production These parallel efforts resulted in a steep yield increase from 30% to over 90% in a 8 months period.

Wafer-scale growth of VO2 thin films using a combinatorial approach

PubMed Central

Zhang, Hai-Tian; Zhang, Lei; Mukherjee, Debangshu; Zheng, Yuan-Xia; Haislmaier, Ryan C.; Alem, Nasim; Engel-Herbert, Roman

2015-01-01

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that ‘electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems. PMID:26450653

Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

NASA Astrophysics Data System (ADS)

Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

2018-01-01

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

Multifunctional medicated lyophilised wafer dressing for effective chronic wound healing.

PubMed

Pawar, Harshavardhan V; Boateng, Joshua S; Ayensu, Isaac; Tetteh, John

2014-06-01

Wafers combining weight ratios of Polyox with carrageenan (75/25) or sodium alginate (50/50) containing streptomycin and diclofenac were prepared to improve chronic wound healing. Gels were freeze-dried using a lyophilisation cycle incorporating an annealing step. Wafers were characterised for morphology, mechanical and in vitro functional (swelling, adhesion, drug release in the presence of simulated wound fluid) characteristics. Both blank (BLK) and drug-loaded (DL) wafers were soft, flexible, elegant in appearance and non-brittle in nature. Annealing helped to improve porous nature of wafers but was affected by the addition of drugs. Mechanical characterisation demonstrated that the wafers were strong enough to withstand normal stresses but also flexible to prevent damage to newly formed skin tissue. Differences in swelling, adhesion and drug release characteristics could be attributed to differences in pore size and sodium sulphate formed because of the salt forms of the two drugs. BLK wafers showed relatively higher swelling and adhesion than DL wafers with the latter showing controlled release of streptomycin and diclofenac. The optimised dressing has the potential to reduce bacterial infection and can also help to reduce swelling and pain associated with injury due to the anti-inflammatory action of diclofenac and help to achieve more rapid wound healing. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

Environmentally benign processing of YAG transparent wafers

NASA Astrophysics Data System (ADS)

Yang, Yan; Wu, Yiquan

2015-12-01

Transparent yttrium aluminum garnet (YAG) wafers were successfully produced via aqueous tape casting and vacuum sintering techniques using a new environmentally friendly binder, a copolymer of isobutylene and maleic anhydride with the commercial name ISOBAM (noted as ISOBAM). Aqueous YAG slurries were mixed by ball-milling, which was followed by de-gassing and tape casting of wafers. The final YAG green tapes were homogenous and flexible, and could be bent freely without cracking. After the drying and sintering processes, transparent YAG wafers were achieved. The microstructures of both the green tape and vacuum-sintered YAG ceramic were observed by scanning electronic microscopy (SEM). Phase compositions were examined by X-ray diffraction (XRD). Optical transmittance was measured in UV-VIS regions with the result that the transmittance is 82.6% at a wavelength of 800 nm.

P/N InP solar cells on Ge wafers

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Material electronic quality specifications for polycrystalline silicon wafers

NASA Astrophysics Data System (ADS)

Kalejs, J. P.

1994-06-01

As the use of polycrystalline silicon wafers has expanded in the photovoltaic industry, the need grows for monitoring and qualification techniques for as-grown material that can be used to optimize crystal growth and help predict solar cell performance. Particular needs are for obtaining quantitative measures over full wafer areas of the effects of lifetime limiting defects and of the lifetime upgrading taking place during solar cell processing. We review here the approaches being pursued in programs under way to develop material quality specifications for thin Edge-defined Film-fed Growth (EFG) polycrystalline silicon as-grown wafers. These studies involve collaborations between Mobil Solar, and NREL and university-based laboratories.

Fabrication of SOI structures with buried cavities using Si wafer direct bonding and electrochemical etch-stop

NASA Astrophysics Data System (ADS)

Chung, Gwiy-Sang

2003-10-01

This paper describes the fabrication of SOI structures with buried cavities using SDB and electrochemical etch-stop. These methods are suitable for thick membrane fabrication with accurate thickness, uniformity, and flatness. After a feed-through hole for supplied voltage and buried cavities was formed on a handle Si wafer with p-type, the handle wafer was bonded to an active Si wafer consisting of a p-type substrate with an n-type epitaxial layer corresponding to membrane thickness. The bonded pair was then thinned until electrochemical etch-stop occurred at the pn junction during electrochemical etchback. By using the SDB SOI structure with buried cavities, active membranes, which have a free standing structure with a dimension of 900×900 μm2, were fabricated. It is confirmed that the fabrication process of the SDB SOI structure with buried cavities is a powerful and versatile technology for new MEMS applications.

Whole Wafer Design and Fabrication for the Alignment of Nanostructures for Chemical Sensor Applications

NASA Technical Reports Server (NTRS)

Biaggi-Labiosa, Azlin M.; Hunter, Gary W.

2013-01-01

A major objective in aerospace sensor development is to produce sensors that are small in size, easy to batch fabricate and low in cost, and have low power consumption The fabrication of chemical sensors involving nanostructured materials can provide these properties as well as the potential for the development of sensor systems with unique properties and improved performance. However, the fabrication and processing of nanostructures for sensor applications currently is limited in the ability to control their location on the sensor. Currently, our group at NASA Glenn Research Center has demonstrated the controlled placement of nanostructures in sensors using a sawtooth patterned electrode design. With this design the nanostructures are aligned between opposing sawtooth electrodes by applying an alternating current.

A triboelectric motion sensor in wearable body sensor network for human activity recognition.

PubMed

Hui Huang; Xian Li; Ye Sun

2016-08-01

The goal of this study is to design a novel triboelectric motion sensor in wearable body sensor network for human activity recognition. Physical activity recognition is widely used in well-being management, medical diagnosis and rehabilitation. Other than traditional accelerometers, we design a novel wearable sensor system based on triboelectrification. The triboelectric motion sensor can be easily attached to human body and collect motion signals caused by physical activities. The experiments are conducted to collect five common activity data: sitting and standing, walking, climbing upstairs, downstairs, and running. The k-Nearest Neighbor (kNN) clustering algorithm is adopted to recognize these activities and validate the feasibility of this new approach. The results show that our system can perform physical activity recognition with a successful rate over 80% for walking, sitting and standing. The triboelectric structure can also be used as an energy harvester for motion harvesting due to its high output voltage in random low-frequency motion.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Characterizing SOI Wafers By Use Of AOTF-PHI

NASA Technical Reports Server (NTRS)

Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

1995-01-01

Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

Mechanism of room temperature oxygen sensor based on nanocrystalline TiO2 film

NASA Astrophysics Data System (ADS)

Bakri, A. S.; Sahdan, M. Z.; Nafarizal, N.; Abdullah, S. A.; Said, N. D. M.; Raship, N. A.; Sari, Y.

2018-04-01

A titanium dioxide (TiO2) thin film is proposed as the active layer for the detection of oxygen gas. The sensor is fabricated on silicon wafer using sol-gel dip coating technique with a constant withdrawal speed. The field emission scanning electron microscope image reveals that the film has a uniform structure while the x-ray diffraction analysis indicates that the film is anatase phase with tetragonal lattice structure. The film exhibit the highest intensity peak at (101) plane. The surface roughness measurement shows that the film has low surface roughness with small grain size. The electrical studies revealed that the resistivity is about 4.02 x 10-3 Ω.cm and the thickness of TiO2 film is 127.44 nm. The gas sensor measurement showed that the sensor response of the film is about 4.21% at room temperature.

Sensors for the CMS Forward Pixel Phase 1 Upgrade

NASA Astrophysics Data System (ADS)

Dilsiz, Kamuran; CMS Collaboration

2016-03-01

The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

VLED for Si wafer-level packaging

NASA Astrophysics Data System (ADS)

Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

2012-03-01

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

I-line stepper based overlay evaluation method for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2018-03-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules additionally require to process the backside of the wafer; thus require an accurate alignment between the front and backside of the wafer. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 µm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8-9]. In this work, the non-contact infrared alignment system of the Nikon® i-line Stepper NSR-SF150 for both alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

NASA Astrophysics Data System (ADS)

Avizemer, Dan; Sharoni, Ofir; Oshemkov, Sergey; Cohen, Avi; Dayan, Asaf; Khurana, Ranjan; Kewley, Dave

2015-07-01

Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [Proc. SPIE 6152, 615225 (2006)]. The process involves locally and selectively attenuating the deep ultraviolet light which goes through the photomask to the wafer. The input data for the CDC process in the wafer fab is typically taken from wafer CDU data, which is measured by metrology tools such as wafer-critical dimension-scanning electron microscopy (CD-SEM), wafer optical scatterometry, or wafer level CD (WLCD). The CD correction process uses the CDU data in order to create an attenuation correction contour, which is later applied by the in-situ ultrashort laser system of the CDC to locally change the transmission of the photomask. The ultrashort pulsed laser system creates small, partially scattered, Shade-In-Elements (also known as pixels) by focusing the laser beam inside the quartz bulk of the photomask. This results in the formation of a localized, intravolume, quartz modified area, which has a different refractive index than the quartz bulk itself. The CDC process flow for improving wafer CDU in a wafer fab with detailed explanations of the shading elements formation inside the quartz by the ultrashort pulsed laser is reviewed.

Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

NASA Astrophysics Data System (ADS)

Goto, Hiroyuki; Pan, Lian-Sheng; Tanaka, Masafumi; Kashima, Kazuhiko

2001-06-01

The properties of nitrogen-doped and hydrogen-annealed Czochralski-grown silicon (NHA-CZ-Si) wafers were investigated in this study. The quality of the subsurface was investigated by monitoring the generation lifetime of minority carriers, as measured by the capacitance-time measurements of a metal oxide silicon capacitor (MOS C-t). The intrinsic gettering (IG) ability was investigated by determining the nickel concentration on the surface and in the subsurface as measured by graphite furnace atomic absorption spectrometry (GFAAS) after the wafer was deliberately contaminated with nickel. From the results obtained, the generation lifetimes of these NHA-CZ-Si wafers were determined to be almost the same as, or a little longer than those of epitaxial wafers, and the IG ability was proportional to the total volume of oxygen precipitates [i.e., bulk micro defects (BMDs)], which was influenced by the oxygen and nitrogen concentrations in the wafers. Therefore, it is suggested that the subsurface of the NHA-CZ-Si wafers is of good quality and the IG capacity is controllable by the nitrogen and oxygen concentrations in the wafers.

A Lorentz force actuated magnetic field sensor with capacitive read-out

NASA Astrophysics Data System (ADS)

Stifter, M.; Steiner, H.; Kainz, A.; Keplinger, F.; Hortschitz, W.; Sauter, T.

2013-05-01

We present a novel design of a resonant magnetic field sensor with capacitive read-out permitting wafer level production. The device consists of a single-crystal silicon cantilever manufactured from the device layer of an SOI wafer. Cantilevers represent a very simple structure with respect to manufacturing and function. On the top of the structure, a gold lead carries AC currents that generate alternating Lorentz forces in an external magnetic field. The free end oscillation of the actuated cantilever depends on the eigenfrequencies of the structure. Particularly, the specific design of a U-shaped structure provides a larger force-to-stiffness-ratio than standard cantilevers. The electrodes for detecting cantilever deflections are separately fabricated on a Pyrex glass-wafer. They form the counterpart to the lead on the freely vibrating planar structure. Both wafers are mounted on top of each other. A custom SU-8 bonding process on wafer level creates a gap which defines the equilibrium distance between sensing electrodes and the vibrating structure. Additionally to the capacitive read-out, the cantilever oscillation was simultaneously measured with laser Doppler vibrometry through proper windows in the SOI handle wafer. Advantages and disadvantages of the asynchronous capacitive measurement configuration are discussed quantitatively and presented by a comprehensive experimental characterization of the device under test.

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

NASA Astrophysics Data System (ADS)

Unno, Y.; Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Lynn, D.; Carter, J. R.; Hommels, L. B. A.; Robinson, D.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; Eklund, L.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Nishimura, R.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Allport, P. P.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandic, I.; Mikuz, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Arai, Y.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Ely, S.; Fadeyev, V.; Galloway, Z.; Grillo, A. A.; Martinez-McKinney, F.; Ngo, J.; Parker, C.; Sadrozinski, H. F.-W.; Schumacher, D.; Seiden, A.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Paganis, S.; Jinnouchi, O.; Motohashi, K.; Todome, K.; Yamaguchi, D.; Hara, K.; Hagihara, M.; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti i Garcia, S.; Soldevila, U.

2014-11-01

We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

Making Porous Luminescent Regions In Silicon Wafers

NASA Technical Reports Server (NTRS)

Fathauer, Robert W.; Jones, Eric W.

1994-01-01

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

Strategy optimization for mask rule check in wafer fab

NASA Astrophysics Data System (ADS)

Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

2015-07-01

Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

Wafer plane inspection for advanced reticle defects

NASA Astrophysics Data System (ADS)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

The uses of Man-Made diamond in wafering applications

NASA Technical Reports Server (NTRS)

Fallon, D. B.

1982-01-01

The continuing, rapid growth of the semiconductor industry requires the involvement of several specialized industries in the development of special products geared toward the unique requirements of this new industry. A specialized manufactured diamond to meet various material removal needs was discussed. The area of silicon wafer slicing has presented yet anothr challenge and it is met most effectively. The history, operation, and performance of Man-Made diamond and particularly as applied to silicon wafer slicing is discussed. Product development is underway to come up with a diamond specifically for sawing silicon wafers on an electroplated blade.

Developing quartz wafer mold manufacturing process for patterned media

NASA Astrophysics Data System (ADS)

Chiba, Tsuyoshi; Fukuda, Masaharu; Ishikawa, Mikio; Itoh, Kimio; Kurihara, Masaaki; Hoga, Morihisa

2009-04-01

Recently, patterned media have gained attention as a possible candidate for use in the next generation of hard disk drives (HDD). Feature sizes on media are predicted to be 20-25 nm half pitch (hp) for discrete-track media in 2010. One method of fabricating such a fine pattern is by using a nanoimprint. The imprint mold for the patterned media is created from a 150-millimeter, rounded, quartz wafer. The purpose of the process introduced here was to construct a quartz wafer mold and to fabricate line and space (LS) patterns at 24 nmhp for DTM. Additionally, we attempted to achieve a dense hole (HOLE) pattern at 12.5 nmhp for BPM for use in 2012. The manufacturing process of molds for patterned media is almost the same as that for semiconductors, with the exception of the dry-etching process. A 150-millimeter quartz wafer was etched on a special tray made from carving a 6025 substrate, by using the photo-mask tool. We also optimized the quartz etching conditions. As a result, 24 nmhp LS and HOLE patterns were manufactured on the quartz wafer. In conclusion, the quartz wafer mold manufacturing process was established. It is suggested that the etching condition should be further optimized to achieve a higher resolution of HOLE patterns.

Improved delivery of the anticancer agent citral using BSA nanoparticles and polymeric wafers.

PubMed

White, Benjamin; Evison, Anna; Dombi, Eszter; Townley, Helen E

2017-01-01

Rhabdomyosarcoma (RMS) is the most common soft tissue sarcoma in children, with a 5-year survival rate of between 30 and 65%. Standard treatment involves surgery, radiation treatment, and chemotherapy. However, there is a high recurrence rate, particularly from locoregional spread. We investigated the use of the natural compound citral (3,7-dimethyl-2,6-octadienal), which can be found in a number of plants, but is particularly abundant in lemon grass ( Cymbopogon citratus ) oil, for activity against immortalized RMS cells. Significant cancer cell death was seen at concentrations above 150 μM citral, and mitochondrial morphological changes were seen after incubation with 10 μM citral. However, since citral is a highly volatile molecule, we prepared albumin particles by a desolvation method to encapsulate citral, as a means of stabilization. We then further incorporated the loaded nanoparticles into a biodegradable polyanhydride wafer to generate a slow release system. The wafers were shown to degrade by 50% over the course of 25 days and to release the active compound. We therefore propose the use of the citral-nanoparticle-polymer wafers for implantation into the tumor bed after surgical removal of a sarcoma as a means to control locoregional spread due to any remaining cancerous cells.

Improved delivery of the anticancer agent citral using BSA nanoparticles and polymeric wafers

PubMed Central

White, Benjamin; Evison, Anna; Dombi, Eszter; Townley, Helen E

2017-01-01

Rhabdomyosarcoma (RMS) is the most common soft tissue sarcoma in children, with a 5-year survival rate of between 30 and 65%. Standard treatment involves surgery, radiation treatment, and chemotherapy. However, there is a high recurrence rate, particularly from locoregional spread. We investigated the use of the natural compound citral (3,7-dimethyl-2,6-octadienal), which can be found in a number of plants, but is particularly abundant in lemon grass (Cymbopogon citratus) oil, for activity against immortalized RMS cells. Significant cancer cell death was seen at concentrations above 150 μM citral, and mitochondrial morphological changes were seen after incubation with 10 μM citral. However, since citral is a highly volatile molecule, we prepared albumin particles by a desolvation method to encapsulate citral, as a means of stabilization. We then further incorporated the loaded nanoparticles into a biodegradable polyanhydride wafer to generate a slow release system. The wafers were shown to degrade by 50% over the course of 25 days and to release the active compound. We therefore propose the use of the citral-nanoparticle-polymer wafers for implantation into the tumor bed after surgical removal of a sarcoma as a means to control locoregional spread due to any remaining cancerous cells. PMID:29263655

The Imaging Properties of a Silicon Wafer X-Ray Telescope

NASA Technical Reports Server (NTRS)

Joy, M. K.; Kolodziejczak, J. J.; Weisskopf, M. C.; Fair, S.; Ramsey, B. D.

1994-01-01

Silicon wafers have excellent optical properties --- low microroughness and good medium-scale flatness --- which Make them suitable candidates for inexpensive flat-plate grazing-incidence x-ray mirrors. On short spatial scales (less than 3 mm) the surface quality of silicon wafers rivals that expected of the Advanced X-Ray Astrophysics Facility (AXAF) high-resolution optics. On larger spatial scales, however, performance may be degraded by the departure from flatness of the wafer and by distortions induced by the mounting scheme. In order to investigate such effects, we designed and constructed a prototype silicon-wafer x-ray telescope. The device was then tested in both visible light and x rays. The telescope module consists of 94 150-mm-diameter wafers, densely packed into the first stage of a Kirkpatrick-Baez configuration. X-ray tests at three energies (4.5, 6.4, and 8.0 keV) showed an energy-independent line spread function with full width at half maximum (FWHM) of 150 arcseconds, dominated by deviations from large-scale flatness.

Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, S.; Yan, F.; Zaunbracher, K.

2011-07-01

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finishedmore » cell performance.« less

11.72-sq cm Active-Area Wafer Interconnected PiN Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA(sup 2)-s

DTIC Science & Technology

2012-01-30

calculated action exceeded 1.7 MA2 -s. Preliminary efforts on high voltage diode interconnection have produced quarter wafer interconnected PiN...was packaged in a “hockey-puck” configuration and pulsed to 64 kA, dissipating 382 J with a calculated action exceeding 1.7 MA2 -s. II. FULL...epitaxial layers are utilized. 11.72-cm2 Active-area Wafer Interconnected PiN Diode pulsed at 64 kA dissipates 382 J and exhibits an action of 1.7 MA2 -s

Wafer-shape metrics based foundry lithography

NASA Astrophysics Data System (ADS)

Kim, Sungtae; Liang, Frida; Mileham, Jeffrey; Tsai, Damon; Bouche, Eric; Lee, Sean; Huang, Albert; Hua, C. F.; Wei, Ming Sheng

2017-03-01

As device shrink, there are many difficulties with process integration and device yield. Lithography process control is expected to be a major challenge due to tighter overlay and focus control requirement. The understanding and control of stresses accumulated during device fabrication has becoming more critical at advanced technology nodes. Within-wafer stress variations cause local wafer distortions which in turn present challenges for managing overlay and depth of focus during lithography. A novel technique for measuring distortion is Coherent Gradient Sensing (CGS) interferometry, which is capable of generating a high-density distortion data set of the full wafer within a time frame suitable for a high volume manufacturing (HVM) environment. In this paper, we describe the adoption of CGS (Coherent Gradient Sensing) interferometry into high volume foundry manufacturing to overcome these challenges. Leveraging this high density 3D metrology, we characterized its In-plane distortion as well as its topography capabilities applied to the full flow of an advanced foundry manufacturing. Case studies are presented that summarize the use of CGS data to reveal correlations between in-plane distortion and overlay variation as well as between topography and device yield.

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

NASA Astrophysics Data System (ADS)

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

2018-01-01

Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

Development of Active Catheter,Active Guide Wire and Micro Sensor Systems

PubMed Central

Haga, Y.; Mineta, T.; Totsu, K.; Makishi, W.; Esashi, M.

2001-01-01

Summary Active catheters and active guide wires which move like a snake have been developed for catheter-based minimally invasive diagnosis and therapy. Communication and control IC chips in the active catheter reduce the number of lead wires for control. The active catheter can be not only bent but also torsioned and extended. An ultra minature fiber-optic pressure sensor; a forward-looking ultrasonic probe and a magnetic position and orientation sensor have been developed for catheters and guide wires. These moving mechanisms and several sensors which are fitted near the tip of the catheter and the guide wire will provide detailed information near the tip and enable delicate and effective catheter intervention. PMID:20663389

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

NASA Astrophysics Data System (ADS)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Digital Platform for Wafer-Level MEMS Testing and Characterization Using Electrical Response

PubMed Central

Brito, Nuno; Ferreira, Carlos; Alves, Filipe; Cabral, Jorge; Gaspar, João; Monteiro, João; Rocha, Luís

2016-01-01

The uniqueness of microelectromechanical system (MEMS) devices, with their multiphysics characteristics, presents some limitations to the borrowed test methods from traditional integrated circuits (IC) manufacturing. Although some improvements have been performed, this specific area still lags behind when compared to the design and manufacturing competencies developed over the last decades by the IC industry. A complete digital solution for fast testing and characterization of inertial sensors with built-in actuation mechanisms is presented in this paper, with a fast, full-wafer test as a leading ambition. The full electrical approach and flexibility of modern hardware design technologies allow a fast adaptation for other physical domains with minimum effort. The digital system encloses a processor and the tailored signal acquisition, processing, control, and actuation hardware control modules, capable of the structure position and response analysis when subjected to controlled actuation signals in real time. The hardware performance, together with the simplicity of the sequential programming on a processor, results in a flexible and powerful tool to evaluate the newest and fastest control algorithms. The system enables measurement of resonant frequency (Fr), quality factor (Q), and pull-in voltage (Vpi) within 1.5 s with repeatability better than 5 ppt (parts per thousand). A full-wafer with 420 devices under test (DUTs) has been evaluated detecting the faulty devices and providing important design specification feedback to the designers. PMID:27657087

Digital Platform for Wafer-Level MEMS Testing and Characterization Using Electrical Response.

PubMed

Brito, Nuno; Ferreira, Carlos; Alves, Filipe; Cabral, Jorge; Gaspar, João; Monteiro, João; Rocha, Luís

2016-09-21

The uniqueness of microelectromechanical system (MEMS) devices, with their multiphysics characteristics, presents some limitations to the borrowed test methods from traditional integrated circuits (IC) manufacturing. Although some improvements have been performed, this specific area still lags behind when compared to the design and manufacturing competencies developed over the last decades by the IC industry. A complete digital solution for fast testing and characterization of inertial sensors with built-in actuation mechanisms is presented in this paper, with a fast, full-wafer test as a leading ambition. The full electrical approach and flexibility of modern hardware design technologies allow a fast adaptation for other physical domains with minimum effort. The digital system encloses a processor and the tailored signal acquisition, processing, control, and actuation hardware control modules, capable of the structure position and response analysis when subjected to controlled actuation signals in real time. The hardware performance, together with the simplicity of the sequential programming on a processor, results in a flexible and powerful tool to evaluate the newest and fastest control algorithms. The system enables measurement of resonant frequency (Fr), quality factor (Q), and pull-in voltage (Vpi) within 1.5 s with repeatability better than 5 ppt (parts per thousand). A full-wafer with 420 devices under test (DUTs) has been evaluated detecting the faulty devices and providing important design specification feedback to the designers.

Multi-wafer bonding technology for the integration of a micromachined Mirau interferometer

NASA Astrophysics Data System (ADS)

Wang, Wei-Shan; Lullin, Justine; Froemel, Joerg; Wiemer, Maik; Bargiel, Sylwester; Passilly, Nicolas; Gorecki, Christophe; Gessner, Thomas

2015-02-01

The paper presents the multi-wafer bonding technology as well as the integration of electrical connection to the zscanner wafer of the micromachined array-type Mirau interferometer. A Mirau interferometer, which is a key-component of optical coherence tomography (OCT) microsystem, consists of a microlens doublet, a MOEMS Z-scanner, a focusadjustment spacer and a beam splitter plate. For the integration of this MOEMS device heterogeneous bonding of Si, glass and SOI wafers is necessary. Previously, most of the existing methods for multilayer wafer bonding require annealing at high temperature, i.e., 1100°C. To be compatible with MEMS devices, bonding of different material stacks at temperatures lower than 400°C has also been investigated. However, if more components are involved, it becomes less effective due to the alignment accuracy or degradation of surface quality of the not-bonded side after each bonding operation. The proposed technology focuses on 3D integration of heterogeneous building blocks, where the assembly process is compatible with the materials of each wafer stack and with position accuracy which fits optical requirement. A demonstrator with up to 5 wafers bonded lower than 400°C is presented and bond interfaces are evaluated. To avoid the complexity of through wafer vias, a design which creates electrical connections along vertical direction by mounting a wafer stack on a flip chip PCB is proposed. The approach, which adopts vertically-stacked wafers along with electrical connection functionality, provides not only a space-effective integration of MOEMS device but also a design where the Mirau stack can be further integrated with other components of the OCT microsystem easily.

Implantable Wireless MEMS Sensors for Medical Uses

NASA Technical Reports Server (NTRS)

Chimbayo, Alexander

2006-01-01

Sensors designed and fabricated according to the principles of microelectromechanical systems (MEMS) are being developed for several medical applications in outer space and on Earth. The designs of these sensors are based on a core design family of pressure sensors, small enough to fit into the eye of a needle, that are fabricated by a "dissolved wafer" process. The sensors are expected to be implantable, batteryless, and wireless. They would be both powered and interrogated by hand-held radio transceivers from distances up to about 6 in. (about 15 cm). One type of sensor would be used to measure blood pressure, particularly for congestive heart failure. Another type would be used to monitor fluids in patients who have hydrocephalus (high brain pressure). Still other types would be used to detect errors in delivery of drugs and to help patients having congestive heart failure.

A Two-Axis Direct Fluid Shear Stress Sensor

NASA Technical Reports Server (NTRS)

Adcock, Edward E.; Scott, Michael A.; Bajikar, Sateesh S.

2010-01-01

This innovation is a miniature or micro sized semiconductor sensor design that provides two axis direct non-intrusive measurement of skin friction or wall shear stress in fluid flow. The sensor is fabricated by micro-electro-mechanical system (MEMS) technology, enabling small size and low cost reproductions. The sensors have been fabricated by utilizing MEMS fabrication processes to bond a sensing element wafer to a fluid coupling wafer. This layering technique provides for an out of plane dimension that is on the same order of length as the inplane dimensions. The sensor design has the following characteristics: a shear force collecting plate with dimensions that can be tailored to various application specific requirements such as spatial resolution, temporal resolution and shear force range and resolution. This plate is located coplanar to both the sensor body and flow boundary, and is connected to a dual axis gimbal structure by a connecting column or lever arm. The dual axis gimbal structure has torsional hinges with embedded piezoresistive torsional strain gauges which provide a voltage output that is correlated to the applied shear stress (and excitation current) on force collection plate that is located on the flow boundary surface (hence the transduction method). This combination of design elements create a force concentration and resolution structure that enables the generation of a large stress on the strain gauge from the small shear stress on the flow boundary wall. This design as well as the use of back side electrical contacts establishes a non-intrusive method to quantitatively measure the shear force vector on aerodynamic bodies.

Integrated active sensor system for real time vibration monitoring.

PubMed

Liang, Qijie; Yan, Xiaoqin; Liao, Xinqin; Cao, Shiyao; Lu, Shengnan; Zheng, Xin; Zhang, Yue

2015-11-05

We report a self-powered, lightweight and cost-effective active sensor system for vibration monitoring with multiplexed operation based on contact electrification between sensor and detected objects. The as-fabricated sensor matrix is capable of monitoring and mapping the vibration state of large amounts of units. The monitoring contents include: on-off state, vibration frequency and vibration amplitude of each unit. The active sensor system delivers a detection range of 0-60 Hz, high accuracy (relative error below 0.42%), long-term stability (10000 cycles). On the time dimension, the sensor can provide the vibration process memory by recording the outputs of the sensor system in an extend period of time. Besides, the developed sensor system can realize detection under contact mode and non-contact mode. Its high performance is not sensitive to the shape or the conductivity of the detected object. With these features, the active sensor system has great potential in automatic control, remote operation, surveillance and security systems.

Integrated active sensor system for real time vibration monitoring

PubMed Central

Liang, Qijie; Yan, Xiaoqin; Liao, Xinqin; Cao, Shiyao; Lu, Shengnan; Zheng, Xin; Zhang, Yue

2015-01-01

We report a self-powered, lightweight and cost-effective active sensor system for vibration monitoring with multiplexed operation based on contact electrification between sensor and detected objects. The as-fabricated sensor matrix is capable of monitoring and mapping the vibration state of large amounts of units. The monitoring contents include: on-off state, vibration frequency and vibration amplitude of each unit. The active sensor system delivers a detection range of 0–60 Hz, high accuracy (relative error below 0.42%), long-term stability (10000 cycles). On the time dimension, the sensor can provide the vibration process memory by recording the outputs of the sensor system in an extend period of time. Besides, the developed sensor system can realize detection under contact mode and non-contact mode. Its high performance is not sensitive to the shape or the conductivity of the detected object. With these features, the active sensor system has great potential in automatic control, remote operation, surveillance and security systems. PMID:26538293

A system for activity recognition using multi-sensor fusion.

PubMed

Gao, Lei; Bourke, Alan K; Nelson, John

2011-01-01

This paper proposes a system for activity recognition using multi-sensor fusion. In this system, four sensors are attached to the waist, chest, thigh, and side of the body. In the study we present two solutions for factors that affect the activity recognition accuracy: the calibration drift and the sensor orientation changing. The datasets used to evaluate this system were collected from 8 subjects who were asked to perform 8 scripted normal activities of daily living (ADL), three times each. The Naïve Bayes classifier using multi-sensor fusion is adopted and achieves 70.88%-97.66% recognition accuracies for 1-4 sensors.

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

Wafer chamber having a gas curtain for extreme-UV lithography

DOEpatents

Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

2001-01-01

An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

Monolithic Active Pixel Sensors

NASA Astrophysics Data System (ADS)

Lutz, P.

In close collaboration with the group from Strasbourg, Saclay has been developing fast monolithic active pixel sensors for future vertex detectors. This presentation gives some recent results from the MIMOSA serie, emphazising the participation of the group.

Ultra-Gradient Test Cavity for Testing SRF Wafer Samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

N.J. Pogue, P.M. McIntyre, A.I. Sattarov, C. Reece

2010-11-01

A 1.3 GHz test cavity has been designed to test wafer samples of superconducting materials. This mushroom shaped cavity, operating in TE01 mode, creates a unique distribution of surface fields. The surface magnetic field on the sample wafer is 3.75 times greater than elsewhere on the Niobium cavity surface. This field design is made possible through dielectrically loading the cavity by locating a hemisphere of ultra-pure sapphire just above the sample wafer. The sapphire pulls the fields away from the walls so the maximum field the Nb surface sees is 25% of the surface field on the sample. In thismore » manner, it should be possible to drive the sample wafer well beyond the BCS limit for Niobium while still maintaining a respectable Q. The sapphire's purity must be tested for its loss tangent and dielectric constant to finalize the design of the mushroom test cavity. A sapphire loaded CEBAF cavity has been constructed and tested. The results on the dielectric constant and loss tangent will be presented« less

Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.

2017-12-01

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128×128 square pixels with 25μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (~20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ~20 ns for a power consumption of 5μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (~20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.

In vitro and in vivo evaluation of a sublingual fentanyl wafer formulation

PubMed Central

Lim, Stephen CB; Paech, Michael J; Sunderland, Bruce; Liu, Yandi

2013-01-01

Background The objective of this study was to prepare a novel fentanyl wafer formulation by a freeze-drying method, and to evaluate its in vitro and in vivo release characteristics, including its bioavailability via the sublingual route. Methods The wafer formulation was prepared by freeze-drying an aqueous dispersion of fentanyl containing sodium carboxymethylcellulose and amylogum as matrix formers. Uniformity of weight, friability, and dissolution testing of the fentanyl wafer was achieved using standard methods, and the residual moisture content was measured. The fentanyl wafer was also examined using scanning electron microscopy and x-ray diffraction. The absolute bioavailability of the fentanyl wafer was evaluated in 11 opioid-naïve adult female patients using a randomized crossover design. Results In vitro release showed that almost 90% of the fentanyl dissolved in one minute. In vivo, the first detectable plasma fentanyl concentration was observed after 3.5 minutes and the peak plasma concentration between 61.5 and 67 minutes. The median absolute bioavailability was 53.0%. Conclusion These results indicate that this wafer has potential as an alternative sublingual fentanyl formulation. PMID:23596347

Robust wafer identification recognition based on asterisk-shape filter and high-low score comparison method.

PubMed

Hsu, Wei-Chih; Yu, Tsan-Ying; Chen, Kuan-Liang

2009-12-10

Wafer identifications (wafer ID) can be used to identify wafers from each other so that wafer processing can be traced easily. Wafer ID recognition is one of the problems of optical character recognition. The process to recognize wafer IDs is similar to that used in recognizing car license-plate characters. However, due to some unique characteristics, such as the irregular space between two characters and the unsuccessive strokes of wafer ID, it will not get a good result to recognize wafer ID by directly utilizing the approaches used in car license-plate character recognition. Wafer ID scratches are engraved by a laser scribe almost along the following four fixed directions: horizontal, vertical, plus 45 degrees , and minus 45 degrees orientations. The closer to the center line of a wafer ID scratch, the higher the gray level will be. These and other characteristics increase the difficulty to recognize the wafer ID. In this paper a wafer ID recognition scheme based on an asterisk-shape filter and a high-low score comparison method is proposed to cope with the serious influence of uneven luminance and make recognition more efficiently. Our proposed approach consists of some processing stages. Especially in the final recognition stage, a template-matching method combined with stroke analysis is used as a recognizing scheme. This is because wafer IDs are composed of Semiconductor Equipment and Materials International (SEMI) standard Arabic numbers and English alphabets, and thus the template ID images are easy to obtain. Furthermore, compared with the approach that requires prior training, such as a support vector machine, which often needs a large amount of training image samples, no prior training is required for our approach. The testing results show that our proposed scheme can efficiently and correctly segment out and recognize the wafer ID with high performance.

Pulse-driven magnetoimpedance sensor detection of cardiac magnetic activity.

PubMed

Nakayama, Shinsuke; Sawamura, Kenta; Mohri, Kaneo; Uchiyama, Tsuyoshi

2011-01-01

This study sought to establish a convenient method for detecting biomagnetic activity in the heart. Electrical activity of the heart simultaneously induces a magnetic field. Detection of this magnetic activity will enable non-contact, noninvasive evaluation to be made. We improved the sensitivity of a pulse-driven magnetoimpedance (PMI) sensor, which is used as an electric compass in mobile phones and as a motion sensor of the operation handle in computer games, toward a pico-Tesla (pT) level, and measured magnetic fields on the surface of the thoracic wall in humans. The changes in magnetic field detected by this sensor synchronized with the electric activity of the electrocardiogram (ECG). The shape of the magnetic wave was largely altered by shifting the sensor position within 20 mm in parallel and/or perpendicular to the thoracic wall. The magnetic activity was maximal in the 4th intercostals near the center of the sterna. Furthermore, averaging the magnetic activity at 15 mm in the distance between the thoracic wall and the sensor demonstrated magnetic waves mimicking the P wave and QRS complex. The present study shows the application of PMI sensor in detecting cardiac magnetic activity in several healthy subjects, and suggests future applications of this technology in medicine and biology.

Control wafer bow of InGaP on 200 mm Si by strain engineering

NASA Astrophysics Data System (ADS)

Wang, Bing; Bao, Shuyu; Made, Riko I.; Lee, Kwang Hong; Wang, Cong; Eng Kian Lee, Kenneth; Fitzgerald, Eugene A.; Michel, Jurgen

2017-12-01

When epitaxially growing III-V compound semiconductors on Si substrates the mismatch of coefficients of thermal expansion (CTEs) between III-V and Si causes stress and wafer bow. The wafer bow is deleterious for some wafer-scale processing especially when the wafer size is large. Strain engineering was applied in the epitaxy of InGaP films on 200 mm silicon wafers having high quality germanium buffers. By applying compressive strain in the InGaP films to compensate the tensile strain induced by CTE mismatch, wafer bow was decreased from about 100 μm to less than 50 μm. X-ray diffraction studies show a clear trend between the decrease of wafer bow and the compensation of CTE mismatch induced tensile strain in the InGaP layers. In addition, the anisotropic strain relaxation in InGaP films resulted in anisotropic wafer bow along two perpendicular (110) directions. Etch pit density and plane-view transmission electron microscopy characterizations indicate that threading dislocation densities did not change significantly due to the lattice-mismatch applied in the InGaP films. This study shows that strain engineering is an effective method to control wafer bow when growing III-V semiconductors on large size Si substrates.

W-Band On-Wafer Measurement of Uniplanar Slot-Type Antennas

NASA Technical Reports Server (NTRS)

Raman, Sanjay; Gauthier, Gildas P.; Rebeiz, Gabriel M.

1997-01-01

Uniplanar slot-type antennas such as coplanar waveguide fed single- and dual-polarized slot-ring antennas and double folded-slot antennas are characterized using a millimeter-wave network analyzer and on-wafer measurement techniques. The antennas are designed to be mounted on a dielectric lens to minimize power loss into substrate modes and realize high-gain antenna patterns. On-wafer measurements are performed by placing the antenna wafer on a thick dielectric spacer of similar e(sub t) and eliminating the reflection from the probe station chuck with time-domain gating. The measured results agree well with method-of-moments simulations.

Investigation of radiation hardened SOI wafer fabricated by ion-cut technique

NASA Astrophysics Data System (ADS)

Chang, Yongwei; Wei, Xing; Zhu, Lei; Su, Xin; Gao, Nan; Dong, Yemin

2018-07-01

Total ionizing dose (TID) effect on Silicon-on-Insulator (SOI) wafers due to inherent buried oxide (BOX) is a significant concern as it leads to the degradation of electrical properties of SOI-based devices and circuits, even failures of the systems associated with them. This paper reports the radiation hardening implementation of SOI wafer fabricated by ion-cut technique integrated with low-energy Si+ implantation. The electrical properties and radiation response of pseudo-MOS transistors are analyzed. The results demonstrate that the hardening process can significantly improve the TID tolerance of SOI wafers by generating Si nanocrystals (Si-NCs) within the BOX. The presence of Si-NCs created through Si+ implantation is evidenced by high-resolution transmission electron microscopy (HR-TEM). Under the pass gate (PG) irradiation bias, the anti-radiation properties of H-gate SOI nMOSFETs suggest that the radiation hardened SOI wafers with optimized Si implantation dose can perform effectively in a radiation environment. The radiation hardening process provides an excellent way to reinforce the TID tolerance of SOI wafers.

Fabrication of Thin Film Heat Flux Sensors

NASA Technical Reports Server (NTRS)

Will, Herbert A.

1992-01-01

Prototype thin film heat flux sensors have been constructed and tested. The sensors can be applied to propulsion system materials and components. The sensors can provide steady state and fast transient heat flux information. Fabrication of the sensor does not require any matching of the mounting surface. Heat flux is proportional to the temperature difference across the upper and lower surfaces of an insulation material. The sensor consists of an array of thermocouples on the upper and lower surfaces of a thin insulating layer. The thermocouples for the sensor are connected in a thermopile arrangement. A 100 thermocouple pair heat flux sensor has been fabricated on silicon wafers. The sensor produced an output voltage of 200-400 microvolts when exposed to a hot air heat gun. A 20 element thermocouple pair heat flux sensor has been fabricated on aluminum oxide sheet. Thermocouples are Pt-Pt/Rh with silicon dioxide as the insulating material. This sensor produced an output of 28 microvolts when exposed to the radiation of a furnace operating at 1000 C. Work is also underway to put this type of heat flux sensor on metal surfaces.

Dealing with the Effects of Sensor Displacement in Wearable Activity Recognition

PubMed Central

Banos, Oresti; Toth, Mate Attila; Damas, Miguel; Pomares, Hector; Rojas, Ignacio

2014-01-01

Most wearable activity recognition systems assume a predefined sensor deployment that remains unchanged during runtime. However, this assumption does not reflect real-life conditions. During the normal use of such systems, users may place the sensors in a position different from the predefined sensor placement. Also, sensors may move from their original location to a different one, due to a loose attachment. Activity recognition systems trained on activity patterns characteristic of a given sensor deployment may likely fail due to sensor displacements. In this work, we innovatively explore the effects of sensor displacement induced by both the intentional misplacement of sensors and self-placement by the user. The effects of sensor displacement are analyzed for standard activity recognition techniques, as well as for an alternate robust sensor fusion method proposed in a previous work. While classical recognition models show little tolerance to sensor displacement, the proposed method is proven to have notable capabilities to assimilate the changes introduced in the sensor position due to self-placement and provides considerable improvements for large misplacements. PMID:24915181

New optoelectronic methodology for nondestructive evaluation of MEMS at the wafer level

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Ferguson, Curtis F.; Melson, Michael J.

2004-02-01

One of the approaches to fabrication of MEMS involves surface micromachining to define dies on single crystal silicon wafers, dicing of the wafers to separate the dies, and electronic packaging of the individual dies. Dicing and packaging of MEMS accounts for a large fraction of the fabrication costs, therefore, nondestructive evaluation at the wafer level, before dicing, can have significant implications on improving production yield and costs. In this paper, advances in development of optoelectronic holography (OEH) techniques for nondestructive, noninvasive, full-field of view evaluation of MEMS at the wafer level are described. With OEH techniques, quantitative measurements of shape and deformation of MEMS, as related to their performance and integrity, are obtained with sub-micrometer spatial resolution and nanometer measuring accuracy. To inspect an entire wafer with OEH methodologies, measurements of overlapping regions of interest (ROI) on a wafer are recorded and adjacent ROIs are stitched together through efficient 3D correlation analysis algorithms. Capabilities of the OEH techniques are illustrated with representative applications, including determination of optimal inspection conditions to minimize inspection time while achieving sufficient levels of accuracy and resolution.

Multi-wire slurry wafering demonstrations. [slicing silicon ingots for solar arrays

NASA Technical Reports Server (NTRS)

Chen, C. P.

1978-01-01

Ten slicing demonstrations on a multi-wire slurry saw, made to evaluate the silicon ingot wafering capabilities, reveal that the present sawing capabilities can provide usable wafer area from an ingot 1.05m/kg (e.g. kerf width 0.135 mm and wafer thickness 0.265 mm). Satisfactory surface qualities and excellent yield of silicon wafers were found. One drawback is that the add-on cost of producing water from this saw, as presently used, is considerably higher than other systems being developed for the low-cost silicon solar array project (LSSA), primarily because the saw uses a large quantity of wire. The add-on cost can be significantly reduced by extending the wire life and/or by rescue of properly plated wire to restore the diameter.

High frequency guided wave propagation in monocrystalline silicon wafers

NASA Astrophysics Data System (ADS)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2017-04-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

MEMS fiber-optic Fabry-Perot pressure sensor for high temperature application

NASA Astrophysics Data System (ADS)

Fang, G. C.; Jia, P. G.; Cao, Q.; Xiong, J. J.

2016-10-01

We design and demonstrate a fiber-optic Fabry-Perot pressure sensor (FOFPPS) for high-temperature sensing by employing micro-electro-mechanical system (MEMS) technology. The FOFPPS is fabricated by anodically bonding the silicon wafer and the Pyrex glass together and fixing the facet of the optical fiber in parallel with the silicon surface by glass frit and organic adhesive. The silicon wafer can be reduced through dry etching technology to construct the sensitive diaphragm. The length of the cavity changes with the deformation of the diaphragm due to the loaded pressure, which leads to a wavelength shift of the interference spectrum. The pressure can be gauged by measuring the wavelength shift. The pressure experimental results show that the sensor has linear pressure sensitivities ranging from 0 kPa to 600 kPa at temperature range between 20°C to 300°C. The pressure sensitivity at 300°C is approximately 27.63 pm/kPa. The pressure sensitivities gradually decrease with increasing the temperature. The sensor also has a linear thermal drift when temperature changes from 20°C - 300°C.

Non-contact defect diagnostics in Cz-Si wafers using resonance ultrasonic vibrations

NASA Astrophysics Data System (ADS)

Belyaev, A.; Kochelap, V. A.; Tarasov, I.; Ostapenko, S.

2001-01-01

A new resonance effect of generation of sub-harmonic acoustic vibrations was applied to characterize defects in as-grown and processed Cz-Si wafers. Ultrasonic vibrations were generated into standard 8″ wafers using an external ultrasonic transducer and their amplitude recorded in a non-contact mode using a scanning acoustic probe. By tuning the frequency, f, of the transducer we observed generation of intense sub-harmonic acoustic mode ("whistle" or w-mode) with f/2 frequency. The characteristics of the w-mode-amplitude dependence, frequency scans, spatial distribution allow a clear distinction versus harmonic vibrations of the same wafer. The origin of sub-harmonic vibrations observed on 8″ Cz-Si wafers is attributed to a parametric resonance of flexural vibrations in thin silicon circular plates. We present evidence that "whistle" effect shows a strong dependence on the wafer's growth and processing history and can be used for quality assurance purposes.

Embedded Triboelectric Active Sensors for Real-Time Pneumatic Monitoring.

PubMed

Fu, Xian Peng; Bu, Tian Zhao; Xi, Feng Ben; Cheng, Ting Hai; Zhang, Chi; Wang, Zhong Lin

2017-09-20

Pneumatic monitoring sensors have great demands for power supply in cylinder systems. Here, we present an embedded sliding triboelectric nanogenerator (TENG) in air cylinder as active sensors for position and velocity monitoring. The embedded TENG is composed of a circular poly(tetrafluoroethylene) polymer and a triangular copper electrode. The working mechanism as triboelectric active sensors and electric output performance are systematically investigated. By integrating into the pneumatic system, the embedded triboelectric active sensors have been used for real-time air pressure/flow monitoring and energy storage. Air pressures are measured from 0.04 to 0.12 MPa at a step of 0.02 MPa with a sensitivity of 49.235 V/MPa, as well as airflow from 50 to 250 L/min at a step of 50 L/min with a sensitivity of 0.002 μA·min/L. This work has first demonstrated triboelectric active sensors for pneumatic monitoring and may promote the development of TENG in intelligent pneumatic system.

Sulfur passivation techniques for III-V wafer bonding

NASA Astrophysics Data System (ADS)

Jackson, Michael James

The use of direct wafer bonding in a multijunction III-V solar cell structure requires the formation of a low resistance bonded interface with minimal thermal treatment. A wafer bonded interface behaves as two independent surfaces in close proximity, hence a major source of resistance is Fermi level pinning common in III-V surfaces. This study demonstrates the use of sulfur passivation in III-V wafer bonding to reduce the energy barrier at the interface. Two different sulfur passivation processes are addressed. A dry sulfur passivation method that utilizes elemental sulfur vapor activated by ultraviolet light in vacuum is compared with aqueous sulfide and native oxide etch treatments. Through the addition of a sulfur desorption step in vacuum, the UV-S treatment achieves bondable surfaces free of particles contamination or surface roughening. X-ray photoelectron spectroscopy measurements of the sulfur treated GaAs surfaces find lower levels of oxide and the appearance of sulfide species. After 4 hrs of air exposure, the UV-S treated GaAs actually showed an increase in the amount of sulfide bonded to the semiconductor, resulting in less oxidation compared to the aqueous sulfide treatment. Large area bonding is achieved for sulfur treated GaAs / GaAs and InP / InP with bulk fracture strength achieved after annealing at 400 °C and 300 °C respectively, without large compressive forces. The electrical conductivity across a sulfur treated 400 °C bonded n-GaAs/n-GaAs interface significantly increased with a short anneal (1-2 minutes) at elevated temperatures (50--600 °C). Interfaces treated with the NH4OH oxide etch, on the other hand, exhibited only mild improvement in accordance with previously published studies in this area. TEM and STEM images revealed similar interfacial microstructure changes with annealing for both sulfur treated and NH4OH interfaces, whereby some areas have direct semiconductor-semiconductor contact without any interfacial layer. Fitting the

Wafer-level colinearity monitoring for TFH applications

NASA Astrophysics Data System (ADS)

Moore, Patrick; Newman, Gary; Abreau, Kelly J.

2000-06-01

Advances in thin film head (TFH) designs continue to outpace those in the IC industry. The transition to giant magneto resistive (GMR) designs is underway along with the push toward areal densities in the 20 Gbit/inch2 regime and beyond. This comes at a time when the popularity of the low-cost personal computer (PC) is extremely high, and PC prices are continuing to fall. Consequently, TFH manufacturers are forced to deal with pricing pressure in addition to technological demands. New methods of monitoring and improving yield are required along with advanced head designs. TFH manufacturing is a two-step process. The first is a wafer-level process consisting of manufacturing devices on substrates using processes similar to those in the IC industry. The second half is a slider-level process where wafers are diced into 'rowbars' containing many heads. Each rowbar is then lapped to obtain the desired performance from each head. Variation in the placement of specific layers of each device on the bar, known as a colinearity error, causes a change in device performance and directly impacts yield. The photolithography tool and process contribute to colinearity errors. These components include stepper lens distortion errors, stepper stage errors, reticle fabrication errors, and CD uniformity errors. Currently, colinearity is only very roughly estimated during wafer-level TFH production. An absolute metrology tool, such as a Nikon XY, could be used to quantify colinearity with improved accuracy, but this technique is impractical since TFH manufacturers typically do not have this type of equipment at the production site. More importantly, this measurement technique does not provide the rapid feedback needed in a high-volume production facility. Consequently, the wafer-fab must rely on resistivity-based measurements from slider-fab to quantify colinearity errors. The feedback of this data may require several weeks, making it useless as a process diagnostic. This study examines

Bio-Inspired Stretchable Absolute Pressure Sensor Network

PubMed Central

Guo, Yue; Li, Yu-Hung; Guo, Zhiqiang; Kim, Kyunglok; Chang, Fu-Kuo; Wang, Shan X.

2016-01-01

A bio-inspired absolute pressure sensor network has been developed. Absolute pressure sensors, distributed on multiple silicon islands, are connected as a network by stretchable polyimide wires. This sensor network, made on a 4’’ wafer, has 77 nodes and can be mounted on various curved surfaces to cover an area up to 0.64 m × 0.64 m, which is 100 times larger than its original size. Due to Micro Electro-Mechanical system (MEMS) surface micromachining technology, ultrathin sensing nodes can be realized with thicknesses of less than 100 µm. Additionally, good linearity and high sensitivity (~14 mV/V/bar) have been achieved. Since the MEMS sensor process has also been well integrated with a flexible polymer substrate process, the entire sensor network can be fabricated in a time-efficient and cost-effective manner. Moreover, an accurate pressure contour can be obtained from the sensor network. Therefore, this absolute pressure sensor network holds significant promise for smart vehicle applications, especially for unmanned aerial vehicles. PMID:26729134

Low-power sensor module for long-term activity monitoring.

PubMed

Leuenberger, Kaspar; Gassert, Roger

2011-01-01

Wearable sensor modules are a promising approach to collecting data on functional motor activities, both for repeated and long-term assessments, as well as to investigate the transfer of therapy to activities of daily living at home, but have so far either had limited sensing capabilities, or were not laid out for long-term monitoring. This paper presents ReSense, a miniature sensor unit optimized for long-term monitoring of functional activity. Inertial MEMS sensors capture accelerations along six degrees of freedom and a barometric pressure sensor serves as a precise altimeter. Data is written to an integrated memory card. The realized module measures Ø25 × 10 mm, weighs 10 g and can record continuously for 27 h at 25 Hz and over 22 h at 100 Hz. The integrated power-management system detects inactivity and extends the operating time by about a factor of two, as shown by initial 24 h recordings on five energetic healthy adults. The integrated barometric pressure sensor allowed to identify activities incorporating a change in altitude, such as going up/down stairs or riding an elevator. By taking into account data from the inertial sensors during the altitude changes, it becomes possible to distinguish between these two activities.

Lamb wave propagation in monocrystalline silicon wafers.

PubMed

Fromme, Paul; Pizzolato, Marco; Robyr, Jean-Luc; Masserey, Bernard

2018-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness and beam skewing of the two fundamental Lamb wave modes A 0 and S 0 were investigated. Experimental measurements using contact wedge transducer excitation and laser measurement were conducted. Good agreement was found between the theoretically calculated angular dependency of the phase slowness and measurements for different propagation directions relative to the crystal orientation. Significant wave skew and beam widening was observed experimentally due to the anisotropy, especially for the S 0 mode. Explicit finite element simulations were conducted to visualize and quantify the guided wave beam skew. Good agreement was found for the A 0 mode, but a systematic discrepancy was observed for the S 0 mode. These effects need to be considered for the non-destructive testing of wafers using guided waves.

16 CFR 1211.13 - Inherent force activated secondary door sensors.

Code of Federal Regulations, 2011 CFR

2011-01-01

... sensors. 1211.13 Section 1211.13 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER PRODUCT... § 1211.13 Inherent force activated secondary door sensors. (a) Normal operation test. (1) A force activated door sensor of a door system installed according to the installation instructions shall actuate...

16 CFR 1211.13 - Inherent force activated secondary door sensors.

Code of Federal Regulations, 2014 CFR

2014-01-01

... sensors. 1211.13 Section 1211.13 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER PRODUCT... § 1211.13 Inherent force activated secondary door sensors. (a) Normal operation test. (1) A force activated door sensor of a door system installed according to the installation instructions shall actuate...

16 CFR 1211.13 - Inherent force activated secondary door sensors.

Code of Federal Regulations, 2012 CFR

2012-01-01

... sensors. 1211.13 Section 1211.13 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER PRODUCT... § 1211.13 Inherent force activated secondary door sensors. (a) Normal operation test. (1) A force activated door sensor of a door system installed according to the installation instructions shall actuate...

Active Self-Testing Noise Measurement Sensors for Large-Scale Environmental Sensor Networks

PubMed Central

Domínguez, Federico; Cuong, Nguyen The; Reinoso, Felipe; Touhafi, Abdellah; Steenhaut, Kris

2013-01-01

Large-scale noise pollution sensor networks consist of hundreds of spatially distributed microphones that measure environmental noise. These networks provide historical and real-time environmental data to citizens and decision makers and are therefore a key technology to steer environmental policy. However, the high cost of certified environmental microphone sensors render large-scale environmental networks prohibitively expensive. Several environmental network projects have started using off-the-shelf low-cost microphone sensors to reduce their costs, but these sensors have higher failure rates and produce lower quality data. To offset this disadvantage, we developed a low-cost noise sensor that actively checks its condition and indirectly the integrity of the data it produces. The main design concept is to embed a 13 mm speaker in the noise sensor casing and, by regularly scheduling a frequency sweep, estimate the evolution of the microphone's frequency response over time. This paper presents our noise sensor's hardware and software design together with the results of a test deployment in a large-scale environmental network in Belgium. Our middle-range-value sensor (around €50) effectively detected all experienced malfunctions, in laboratory tests and outdoor deployments, with a few false positives. Future improvements could further lower the cost of our sensor below €10. PMID:24351634

Method and Apparatus for Obtaining a Precision Thickness in Semiconductor and Other Wafers

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2002-01-01

A method and apparatus for processing a wafer comprising a material selected from an electrical semiconducting material and an electrical insulating material is presented. The wafer has opposed generally planar front and rear sides and a peripheral edge, wherein said wafer is pressed against a pad in the presence of a slurry to reduce its thickness. The thickness of the wafer is controlled by first forming a recess such as a dimple on the rear side of the wafer. A first electrical conducting strip extends from a first electrical connection means to the base surface of the recess to the second electrical connector. The first electrical conducting strip overlies the base surface of the recess. There is also a second electrical conductor with an electrical potential source between the first electrical connector and the second electrical connector to form. In combination with the first electrical conducting strip, the second electrical conductor forms a closed electrical circuit, and an electrical current flows through the closed electrical circuit. From the front side of the wafer the initial thickness of the wafer is reduced by lapping until the base surface of the recess is reached. The conductive strip is at least partially removed from the base surface to automatically stop the lapping procedure and thereby achieve the desired thickness.

Microwave Induced Direct Bonding of Single Crystal Silicon Wafers

NASA Technical Reports Server (NTRS)

Budraa, N. K.; Jackson, H. W.; Barmatz, M.

1999-01-01

We have heated polished doped single-crystal silicon wafers in a single mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates. A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry's at positions of high magnetic field. This process was conducted in vacuum to exclude plasma effects. This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

NASA Technical Reports Server (NTRS)

Jones, G. T.; Chitre, S.; Rhee, S. S.; Allison, K. L.

1979-01-01

A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.

Human Activity Recognition from Body Sensor Data using Deep Learning.

PubMed

Hassan, Mohammad Mehedi; Huda, Shamsul; Uddin, Md Zia; Almogren, Ahmad; Alrubaian, Majed

2018-04-16

In recent years, human activity recognition from body sensor data or wearable sensor data has become a considerable research attention from academia and health industry. This research can be useful for various e-health applications such as monitoring elderly and physical impaired people at Smart home to improve their rehabilitation processes. However, it is not easy to accurately and automatically recognize physical human activity through wearable sensors due to the complexity and variety of body activities. In this paper, we address the human activity recognition problem as a classification problem using wearable body sensor data. In particular, we propose to utilize a Deep Belief Network (DBN) model for successful human activity recognition. First, we extract the important initial features from the raw body sensor data. Then, a kernel principal component analysis (KPCA) and linear discriminant analysis (LDA) are performed to further process the features and make them more robust to be useful for fast activity recognition. Finally, the DBN is trained by these features. Various experiments were performed on a real-world wearable sensor dataset to verify the effectiveness of the deep learning algorithm. The results show that the proposed DBN outperformed other algorithms and achieves satisfactory activity recognition performance.

Warpage Measurement of Thin Wafers by Reflectometry

NASA Astrophysics Data System (ADS)

Ng, Chi Seng; Asundi, Anand Krishna

To cope with advances in the electronic and portable devices, electronic packaging industries have employed thinner and larger wafers to produce thinner packages/ electronic devices. As the thickness of the wafer decrease (below 250um), there is an increased tendency for it to warp. Large stresses are induced during manufacturing processes, particularly during backside metal deposition. The wafers bend due to these stresses. Warpage results from the residual stress will affect subsequent manufacturing processes. For example, warpage due to this residual stresses lead to crack dies during singulation process which will severely reorient the residual stress distributions, thus, weakening the mechanical and electrical properties of the singulated die. It is impossible to completely prevent the residual stress induced on thin wafers during the manufacturing processes. Monitoring of curvature/flatness is thus necessary to ensure reliability of device and its uses. A simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been developed and this project aims to take it to the next step for residual stress and full field surface shape measurement. The system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré, Experimental Mechanics (1994) in which novel structured light approach was shown for surface slope and curvature measurement. This method uses similar technology but coupled with a novel phase shift system to accurately measure slope and curvature. In this study, slope of the surface were obtain using the versatility of computer aided reflection grating method to manipulate and generate gratings in two orthogonal directions. The curvature and stress can be evaluated by performing a single order differentiation on slope data.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

2016-11-01

The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

NASA Astrophysics Data System (ADS)

Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

2013-03-01

The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

Enhanced capture rate for haze defects in production wafer inspection

NASA Astrophysics Data System (ADS)

Auerbach, Ditza; Shulman, Adi; Rozentsvige, Moshe

2010-03-01

Photomask degradation via haze defect formation is an increasing troublesome yield problem in the semiconductor fab. Wafer inspection is often utilized to detect haze defects due to the fact that it can be a bi-product of process control wafer inspection; furthermore, the detection of the haze on the wafer is effectively enhanced due to the multitude of distinct fields being scanned. In this paper, we demonstrate a novel application for enhancing the wafer inspection tool's sensitivity to haze defects even further. In particular, we present results of bright field wafer inspection using the on several photo layers suffering from haze defects. One way in which the enhanced sensitivity can be achieved in inspection tools is by using a double scan of the wafer: one regular scan with the normal recipe and another high sensitivity scan from which only the repeater defects are extracted (the non-repeater defects consist largely of noise which is difficult to filter). Our solution essentially combines the double scan into a single high sensitivity scan whose processing is carried out along two parallel routes (see Fig. 1). Along one route, potential defects follow the standard recipe thresholds to produce a defect map at the nominal sensitivity. Along the alternate route, potential defects are used to extract only field repeater defects which are identified using an optimal repeater algorithm that eliminates "false repeaters". At the end of the scan, the two defect maps are merged into one with optical scan images available for all the merged defects. It is important to note, that there is no throughput hit; in addition, the repeater sensitivity is increased relative to a double scan, due to a novel runtime algorithm implementation whose memory requirements are minimized, thus enabling to search a much larger number of potential defects for repeaters. We evaluated the new application on photo wafers which consisted of both random and haze defects. The evaluation procedure

RE-DEFINING THE ROLES OF SENSORS IN OBJECTIVE PHYSICAL ACTIVITY MONITORING

PubMed Central

Chen, Kong Y.; Janz, Kathleen F.; Zhu, Weimo; Brychta, Robert J.

2011-01-01

Background As physical activity researchers are increasingly using objective portable devices, this review describes current state of the technology to assess physical activity, with a focus on specific sensors and sensor properties currently used in monitors and their strengths and weakness. Additional sensors and sensor properties desirable for activity measurement and best practices for users and developers also are discussed. Best Practices We grouped current sensors into three broad categories for objectively measuring physical activity: associated body movement, physiology, and context. Desirable sensor properties for measuring physical activity and the importance of these properties in relationship to specific applications are addressed, and the specific roles of transducers and data acquisition systems within the monitoring devices are defined. Technical advancements in sensors, microcomputer processors, memory storage, batteries, wireless communication, and digital filters have made monitors more usable for subjects (smaller, more stable, and longer running time) and for researchers (less costly, higher time resolution and memory storage, shorter download time, and user-defined data features). Future Directions Users and developers of physical activity monitors should learn about the basic properties of their sensors, such as range, accuracy, precision, while considering the data acquisition/filtering steps that may be critical to data quality and may influence the desirable measurement outcome(s). PMID:22157770

Micro-patterning and characterization of PHEMA-co-PAM-based optical chemical sensors for lab-on-a-chip applications.

PubMed

Zhu, Haixin; Zhou, Xianfeng; Su, Fengyu; Tian, Yanqing; Ashili, Shashanka; Holl, Mark R; Meldrum, Deirdre R

2012-10-01

We report a novel method for wafer level, high throughput optical chemical sensor patterning, with precise control of the sensor volume and capability of producing arbitrary microscale patterns. Monomeric oxygen (O(2)) and pH optical probes were polymerized with 2-hydroxyethyl methacrylate (HEMA) and acrylamide (AM) to form spin-coatable and further crosslinkable polymers. A micro-patterning method based on micro-fabrication techniques (photolithography, wet chemical process and reactive ion etch) was developed to miniaturize the sensor film onto glass substrates in arbitrary sizes and shapes. The sensitivity of fabricated micro-patterns was characterized under various oxygen concentrations and pH values. The process for spatially integration of two sensors (Oxygen and pH) on the same substrate surface was also developed, and preliminary fabrication and characterization results were presented. To the best of our knowledge, it is the first time that poly (2-hydroxylethyl methacrylate)-co-poly (acrylamide) (PHEMA-co-PAM)-based sensors had been patterned and integrated at the wafer level with micron scale precision control using microfabrication techniques. The developed methods can provide a feasible way to miniaturize and integrate the optical chemical sensor system and can be applied to any lab-on-a-chip system, especially the biological micro-systems requiring optical sensing of single or multiple analytes.

Micro-patterning and characterization of PHEMA-co-PAM-based optical chemical sensors for lab-on-a-chip applications

PubMed Central

Zhu, Haixin; Zhou, Xianfeng; Su, Fengyu; Tian, Yanqing; Ashili, Shashanka; Holl, Mark R.; Meldrum, Deirdre R.

2012-01-01

We report a novel method for wafer level, high throughput optical chemical sensor patterning, with precise control of the sensor volume and capability of producing arbitrary microscale patterns. Monomeric oxygen (O2) and pH optical probes were polymerized with 2-hydroxyethyl methacrylate (HEMA) and acrylamide (AM) to form spin-coatable and further crosslinkable polymers. A micro-patterning method based on micro-fabrication techniques (photolithography, wet chemical process and reactive ion etch) was developed to miniaturize the sensor film onto glass substrates in arbitrary sizes and shapes. The sensitivity of fabricated micro-patterns was characterized under various oxygen concentrations and pH values. The process for spatially integration of two sensors (Oxygen and pH) on the same substrate surface was also developed, and preliminary fabrication and characterization results were presented. To the best of our knowledge, it is the first time that poly (2-hydroxylethyl methacrylate)-co-poly (acrylamide) (PHEMA-co-PAM)-based sensors had been patterned and integrated at the wafer level with micron scale precision control using microfabrication techniques. The developed methods can provide a feasible way to miniaturize and integrate the optical chemical sensor system and can be applied to any lab-on-a-chip system, especially the biological micro-systems requiring optical sensing of single or multiple analytes. PMID:23175599

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

NASA Astrophysics Data System (ADS)

Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.

2018-05-01

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.

Intentional defect array wafers: their practical use in semiconductor control and monitoring systems

NASA Astrophysics Data System (ADS)

Emami, Iraj; McIntyre, Michael; Retersdorf, Michael

2003-07-01

In the competitive world of semiconductor manufacturing today, control of the process and manufacturing equipment is paramount to success of the business. Consistent with the need for rapid development of process technology, is a need for development wiht respect to equipment control including defect metrology tools. Historical control methods for defect metrology tools included a raw count of defects detected on a characterized production or test wafer with little or not regard to the attributes of the detected defects. Over time, these characterized wafers degrade with multiple passes on the tools and handling requiring the tool owner to create and characterize new samples periodically. With the complex engineering software analysis systems used today, there is a strong reliance on the accuracy of defect size, location, and classification in order to provide the best value when correlating the in line to sort type of data. Intentional Defect Array (IDA) wafers were designed and manufacturered at International Sematech (ISMT) in Austin, Texas and is a product of collaboration between ISMT member companies and suppliers of advanced defect inspection equipment. These wafers provide the use with known defect types and sizes in predetermined locations across the entire wafer. The wafers are designed to incorporate several desired flows and use critical dimensions consistent with current and future technology nodes. This paper briefly describes the design of the IDA wafer and details many practical applications in the control of advanced defect inspection equipment.

Active Sensor for Microwave Tissue Imaging with Bias-Switched Arrays.

PubMed

Foroutan, Farzad; Nikolova, Natalia K

2018-05-06

A prototype of a bias-switched active sensor was developed and measured to establish the achievable dynamic range in a new generation of active arrays for microwave tissue imaging. The sensor integrates a printed slot antenna, a low-noise amplifier (LNA) and an active mixer in a single unit, which is sufficiently small to enable inter-sensor separation distance as small as 12 mm. The sensor’s input covers the bandwidth from 3 GHz to 7.5 GHz. Its output intermediate frequency (IF) is 30 MHz. The sensor is controlled by a simple bias-switching circuit, which switches ON and OFF the bias of the LNA and the mixer simultaneously. It was demonstrated experimentally that the dynamic range of the sensor, as determined by its ON and OFF states, is 109 dB and 118 dB at resolution bandwidths of 1 kHz and 100 Hz, respectively.

Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

NASA Technical Reports Server (NTRS)

Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.

1998-01-01

Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenz, Adam

For photovoltaic (PV) manufacturing to thrive in the U.S., there must be an innovative core to the technology. Project Automate builds on 1366’s proprietary Direct Wafer® kerfless wafer technology and aims to unlock the cost and efficiency advantages of thin kerfless wafers. Direct Wafer is an innovative, U.S.-friendly (efficient, low-labor content) manufacturing process that addresses the main cost barrier limiting silicon PV cost-reductions – the 35-year-old grand challenge of manufacturing quality wafers (40% of the cost of modules) without the cost and waste of sawing. This simple, scalable process will allow 1366 to manufacture “drop-in” replacement wafers for the $10more » billion silicon PV wafer market at 50% of the cost, 60% of the capital, and 30% of the electricity of conventional casting and sawing manufacturing processes. This SolarMat project developed the Direct Wafer processes’ unique capability to tailor the shape of wafers to simultaneously make thinner AND stronger wafers (with lower silicon usage) that enable high-efficiency cell architectures. By producing wafers with a unique target geometry including a thick border (which determines handling characteristics) and thin interior regions (which control light capture and electron transport and therefore determine efficiency), 1366 can simultaneously improve quality and lower cost (using less silicon).« less

Surface etching technologies for monocrystalline silicon wafer solar cells

NASA Astrophysics Data System (ADS)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

NASA Astrophysics Data System (ADS)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Design of an integrated aerial image sensor

NASA Astrophysics Data System (ADS)

Xue, Jing; Spanos, Costas J.

2005-05-01

The subject of this paper is a novel integrated aerial image sensor (IAIS) system suitable for integration within the surface of an autonomous test wafer. The IAIS could be used as a lithography processing monitor, affording a "wafer's eye view" of the process, and therefore facilitating advanced process control and diagnostics without integrating (and dedicating) the sensor to the processing equipment. The IAIS is composed of an aperture mask and an array of photo-detectors. In order to retrieve nanometer scale resolution of the aerial image with a practical photo-detector pixel size, we propose a design of an aperture mask involving a series of spatial phase "moving" aperture groups. We demonstrate a design example aimed at the 65nm technology node through TEMPEST simulation. The optimized, key design parameters include an aperture width in the range of 30nm, aperture thickness in the range of 70nm, and offer a spatial resolution of about 5nm, all with comfortable fabrication tolerances. Our preliminary simulation work indicates the possibility of the IAIS being applied to the immersion lithography. A bench-top far-field experiment verifies that our approach of the spatial frequency down-shift through forming large Moire patterns is feasible.

A novel bicistronic sensor vector for detecting caspase-3 activation.

PubMed

Vagner, Tatyana; Mouravlev, Alexandre; Young, Deborah

2015-01-01

Apoptosis is involved in pathological cell death of a wide range of human diseases. One of the most important biochemical markers of apoptosis is activation of caspase-3. Ability to detect caspase-3 activation early in the pathological process is important for determining the timing for interfering with apoptosis initiation and prevention of cell damage. Techniques allowing detection of caspase-3 activity at a single cell level show increased sensitivity, compared to biochemical assays; therefore, we developed a novel bicistronic caspase-3 sensor vector enabling detection of caspase-3 activity in individual cells. We employed green fluorescent protein (GFP) as a reporter for caspase-3 activation in our constructs and assessed the functionality of the generated constructs in transiently transfected Neuro2A and HEK293 cells under basal conditions and following application of okadaic acid (OA) or staurosporine (STS) to induce apoptosis. To ensure responsiveness of the new sensor vector to active caspase-3, we co-transfected the sensor with plasmid(s) overexpressing active caspase-3 and quantified GFP fluorescence using a plate reader. We observed an increase in GFP expression in cells transfected with the new bicistronic caspase-3 sensor in response to both OA and STS. We also showed a significant increase in GFP fluorescence intensity in cells co-expressing the sensor with the plasmid(s) encoding active caspase-3. We generated a novel bicistronic caspase-3 sensor vector which relies on a transcription factor/response element system. The obtained sensor combines high sensitivity of the single cell level detection with the possibility of automated quantification. Copyright © 2015 Elsevier Inc. All rights reserved.

Advanced FTIR technology for the chemical characterization of product wafers

NASA Astrophysics Data System (ADS)

Rosenthal, P. A.; Bosch-Charpenay, S.; Xu, J.; Yakovlev, V.; Solomon, P. R.

2001-01-01

Advances in chemically sensitive diagnostic techniques are needed for the characterization of compositionally variable materials such as chemically amplified resists, low-k dielectrics and BPSG films on product wafers. In this context, Fourier Transform Infrared (FTIR) reflectance spectroscopy is emerging as a preferred technique to characterize film chemistry and composition, due to its non-destructive nature and excellent sensitivity to molecular bonds and free carriers. While FTIR has been widely used in R&D environments, its application to mainstream production metrology and process monitoring on product wafers has historically been limited. These limitations have been eliminated in a series of recent FTIR technology advances, which include the use of 1) new sampling optics, which suppress artifact backside reflections and 2) comprehensive model-based analysis. With these recent improvements, it is now possible to characterize films on standard single-side polished product wafers with much simpler training wafer sets and machine-independent calibrations. In this new approach, the chemistry of the films is tracked via the measured infrared optical constants as opposed to conventional absorbance measurements. The extracted spectral optical constants can then be reduced to a limited set of parameters for process control. This paper describes the application of this new FTIR methodology to the characterization of 1) DUV photoresists after various processing steps, 2) low-k materials of different types and after various curing conditions, and 3) doped glass BPSG films of various concentration and, for the first time, widely different thicknesses. Such measurements can be used for improved process control on actual product wafers.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Phosphatase activity of the voltage-sensing phosphatase, VSP, shows graded dependence on the extent of activation of the voltage sensor

PubMed Central

Sakata, Souhei; Okamura, Yasushi

2014-01-01

The voltage-sensing phosphatase (VSP) consists of a voltage sensor and a cytoplasmic phosphatase region, and the movement of the voltage sensor is coupled to the phosphatase activity. However, its coupling mechanisms still remain unclear. One possible scenario is that the phosphatase is activated only when the voltage sensor is in a fully activated state. Alternatively, the enzymatic activity of single VSP proteins could be graded in distinct activated states of the voltage sensor, and partial activation of the voltage sensor could lead to partial activation of the phosphatase. To distinguish between these two possibilities, we studied a voltage sensor mutant of zebrafish VSP, where the voltage sensor moves in two steps as evidenced by analyses of charge movements of the voltage sensor and voltage clamp fluorometry. Measurements of the phosphatase activity toward phosphatidylinositol 4,5-bisphosphate revealed that both steps of voltage sensor activation are coupled to the tuning of phosphatase activities, consistent with the idea that the phosphatase activity is graded by the magnitude of the movement of the voltage sensor. PMID:24277865

Phosphatase activity of the voltage-sensing phosphatase, VSP, shows graded dependence on the extent of activation of the voltage sensor.

PubMed

Sakata, Souhei; Okamura, Yasushi

2014-03-01

The voltage-sensing phosphatase (VSP) consists of a voltage sensor and a cytoplasmic phosphatase region, and the movement of the voltage sensor is coupled to the phosphatase activity. However, its coupling mechanisms still remain unclear. One possible scenario is that the phosphatase is activated only when the voltage sensor is in a fully activated state. Alternatively, the enzymatic activity of single VSP proteins could be graded in distinct activated states of the voltage sensor, and partial activation of the voltage sensor could lead to partial activation of the phosphatase. To distinguish between these two possibilities, we studied a voltage sensor mutant of zebrafish VSP, where the voltage sensor moves in two steps as evidenced by analyses of charge movements of the voltage sensor and voltage clamp fluorometry. Measurements of the phosphatase activity toward phosphatidylinositol 4,5-bisphosphate revealed that both steps of voltage sensor activation are coupled to the tuning of phosphatase activities, consistent with the idea that the phosphatase activity is graded by the magnitude of the movement of the voltage sensor.

Preparation of immobilized glucose oxidase wafer enzyme on calcium-bentonite modified by surfactant

NASA Astrophysics Data System (ADS)

Widi, R. K.; Trisulo, D. C.; Budhyantoro, A.; Chrisnasari, R.

2017-07-01

Wafer glucose oxidase (GOx) enzymes was produced by addition of PAH (Poly-Allyamine Hydrochloride) polymer into immobilized GOx enzyme on modified-Tetramethylammonium Hydroxide (TMAH) 5%-calsium-bentonite. The use of surfactant molecul (TMAH) is to modify the surface properties and pore size distribution of the Ca-bentonite. These properties are very important to ensure GOx molecules can be bound on the Ca-bentonit surface to be immobilized. The addition of the polymer (PAH) is expected to lead the substrates to be adsorbed onto the enzyme. In this study, wafer enzymes were made in various concentration ratio (Ca-bentonite : PAH) which are 1:0, 1:1, 1:2 and 1:3. The effect of PAH (Poly-Allyamine Hydrochloride) polymer added with various ratios of concentrations can be shown from the capacitance value on LCR meter and enzyme activity using DNS method. The addition of the polymer (PAH) showed effect on the activity of GOx, it can be shown from the decreasing of capacitance value by increasing of PAH concentration.

Optimal Sensor Placement for Measuring Physical Activity with a 3D Accelerometer

PubMed Central

Boerema, Simone T.; van Velsen, Lex; Schaake, Leendert; Tönis, Thijs M.; Hermens, Hermie J.

2014-01-01

Accelerometer-based activity monitors are popular for monitoring physical activity. In this study, we investigated optimal sensor placement for increasing the quality of studies that utilize accelerometer data to assess physical activity. We performed a two-staged study, focused on sensor location and type of mounting. Ten subjects walked at various walking speeds on a treadmill, performed a deskwork protocol, and walked on level ground, while simultaneously wearing five ProMove2 sensors with a snug fit on an elastic waist belt. We found that sensor location, type of activity, and their interaction-effect affected sensor output. The most lateral positions on the waist belt were the least sensitive for interference. The effect of mounting was explored, by making two subjects repeat the experimental protocol with sensors more loosely fitted to the elastic belt. The loose fit resulted in lower sensor output, except for the deskwork protocol, where output was higher. In order to increase the reliability and to reduce the variability of sensor output, researchers should place activity sensors on the most lateral position of a participant's waist belt. If the sensor hampers free movement, it may be positioned slightly more forward on the belt. Finally, sensors should be fitted tightly to the body. PMID:24553085

Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

NASA Astrophysics Data System (ADS)

Altan, Hakan

All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on

A general framework for sensor-based human activity recognition.

PubMed

Köping, Lukas; Shirahama, Kimiaki; Grzegorzek, Marcin

2018-04-01

Today's wearable devices like smartphones, smartwatches and intelligent glasses collect a large amount of data from their built-in sensors like accelerometers and gyroscopes. These data can be used to identify a person's current activity and in turn can be utilised for applications in the field of personal fitness assistants or elderly care. However, developing such systems is subject to certain restrictions: (i) since more and more new sensors will be available in the future, activity recognition systems should be able to integrate these new sensors with a small amount of manual effort and (ii) such systems should avoid high acquisition costs for computational power. We propose a general framework that achieves an effective data integration based on the following two characteristics: Firstly, a smartphone is used to gather and temporally store data from different sensors and transfer these data to a central server. Thus, various sensors can be integrated into the system as long as they have programming interfaces to communicate with the smartphone. The second characteristic is a codebook-based feature learning approach that can encode data from each sensor into an effective feature vector only by tuning a few intuitive parameters. In the experiments, the framework is realised as a real-time activity recognition system that integrates eight sensors from a smartphone, smartwatch and smartglasses, and its effectiveness is validated from different perspectives such as accuracies, sensor combinations and sampling rates. Copyright © 2018 Elsevier Ltd. All rights reserved.

Annotating smart environment sensor data for activity learning.

PubMed

Szewcyzk, S; Dwan, K; Minor, B; Swedlove, B; Cook, D

2009-01-01

The pervasive sensing technologies found in smart homes offer unprecedented opportunities for providing health monitoring and assistance to individuals experiencing difficulties living independently at home. In order to monitor the functional health of smart home residents, we need to design technologies that recognize and track the activities that people perform at home. Machine learning techniques can perform this task, but the software algorithms rely upon large amounts of sample data that is correctly labeled with the corresponding activity. Labeling, or annotating, sensor data with the corresponding activity can be time consuming, may require input from the smart home resident, and is often inaccurate. Therefore, in this paper we investigate four alternative mechanisms for annotating sensor data with a corresponding activity label. We evaluate the alternative methods along the dimensions of annotation time, resident burden, and accuracy using sensor data collected in a real smart apartment.

Wafer integrated micro-scale concentrating photovoltaics

NASA Astrophysics Data System (ADS)

Gu, Tian; Li, Duanhui; Li, Lan; Jared, Bradley; Keeler, Gordon; Miller, Bill; Sweatt, William; Paap, Scott; Saavedra, Michael; Das, Ujjwal; Hegedus, Steve; Tauke-Pedretti, Anna; Hu, Juejun

2017-09-01

Recent development of a novel micro-scale PV/CPV technology is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The wafer-embedded micro-concentrating elements is shown to considerably improve the concentration-acceptance-angle product, potentially leading to dramatically reduced module materials and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture, which makes the WPV module compatible with commercial flat panel infrastructures. The PV/CPV hybrid architecture further allows the collection of both direct and diffuse sunlight, thus extending the geographic and market domains for cost-effective PV system deployment. The WPV approach can potentially benefits from both the high performance of multijunction cells and the low cost of flat plate Si PV systems.

Mechanics of wafer bonding: Effect of clamping

NASA Astrophysics Data System (ADS)

Turner, K. T.; Thouless, M. D.; Spearing, S. M.

2004-01-01

A mechanics-based model is developed to examine the effects of clamping during wafer bonding processes. The model provides closed-form expressions that relate the initial geometry and elastic properties of the wafers to the final shape of the bonded pair and the strain energy release rate at the interface for two different clamping configurations. The results demonstrate that the curvature of bonded pairs may be controlled through the use of specific clamping arrangements during the bonding process. Furthermore, it is demonstrated that the strain energy release rate depends on the clamping configuration and that using applied loads usually leads to an undesirable increase in the strain energy release rate. The results are discussed in detail and implications for process development and bonding tool design are highlighted.

A Novel, High-Resolution, High-Speed Fiber-Optic Temperature Sensor for Oceanographic Applications

DTIC Science & Technology

2015-05-11

attached to the endface of a cleaved single-mode fiber using UV curable glue . A novel signal processing method has also been developed for the...thick Si wafer was bonded onto the tip of a single mode optical fiber using UV -curable glue . In addition to the sensor shown in Fig. 1(b), sensor...we developed a process to introduce much thicker silicon pieces onto the optical fiber tip. UV curable glue was first attached to the endface of

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor)

2017-01-01

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Thermal stress during RTP processes and its possible effect on the light induced degradation in Cz-Si wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Yacine; Bouhafs, Djoudi; Khelifati, Nabil; Guenda, Abdelkader; Demagh, Nacer-Eddine; Demagh, Assia; Pfeiffer, Pierre; Mezghiche, Salah; Hetatache, Warda; Derkaoui, Fahima; Nasraoui, Chahinez; Nwadiaru, Ogechi Vivian

2018-04-01

In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD system on both surfaces. Then the wafers were subjected to an RTP cycle at a peak temperature of 620 °C. The first wafer was protected (PW) from the direct radiative heating of the RTP furnace by placing the wafer between two as-cut Cz-Si shield wafers during the heat processing. The second wafer was not protected (NPW) and followed the same RTP cycle procedure. The carrier lifetime τ eff was measured using the QSSPC technique before and after illumination for 5 h duration at 0.5 suns. The immediate results of the measured lifetime (τ RTP ) after the RTP process have shown a regeneration in the lifetime of the two wafers with the PW wafer exhibiting an important enhancement in τ RTP as compared to the NPW wafer. The QSSPC measurements have indicated a good stable lifetime (τ d ) and a weak degradation effect was observed in the case of the PW wafer as compared to their initial lifetime value. Interferometry technique analyses have shown an enhancement in the surface roughness for the NPW wafer as compared to the protected one. Additionally, to improve the correlation between the RTP heat radiation stress and the carrier lifetime behavior, a simulation of the thermal stress and temperature profile using the finite element method on the wafers surface at RTP peak temperature of 620 °C was performed. The results confirm the reduction of the thermal stress with less heat losses for the PW wafer. Finally, the proposed method can lead to improving the lifetime of wafers by an RTP process at minimum energy costs.

Study on silver doped and undoped ZnO thin films working as capacitive sensor

NASA Astrophysics Data System (ADS)

Kiran, S.; Kumar, N. Santhosh; Kumar, S. K. Naveen

2013-06-01

Nanomaterials have been found to exhibit interesting properties like good conductivity, piezoelectricity, high band gap etc. among those metal oxide family, Zinc Oxide has become a material of interest among scientific community. In this paper, we present a method of fabricating capacitive sensors, in which Silver doped ZnO and pure ZnO nanoparticles act as active layer. For the synthesis of the nanoparticle, we followed biosynthesis method and wet chemical method for Ag and Ag doped ZnO nanoparticles respectively. Characterization has been done for both the particles. The XRD pattern taken for the Ag Doped ZnO nanoparticles confirmed the average size of the particles to be 15nm. AFM image of the sample is taken by doping on Silicon wafer. Also we have presented the results of CV characteristics and IV characteristics of the capacitive sensor.

Effects of Activation Energy to Transient Response of Semiconductor Gas Sensor

NASA Astrophysics Data System (ADS)

Fujimoto, Akira; Ohtani, Tatsuki

The smell classifiable gas sensor will be desired for many applications such as gas detection alarms, process controls for food production and so on. We have tried to realize the sensor using transient responses of semiconductor gas sensor consisting of tin dioxide and pointed out that the sensor gave us different transient responses for kinds of gas. Results of model calculation showed the activation energy of chemical reaction on the sensor surface strongly depended on the transient response. We tried to estimate the activation energies by molecular orbital calculation with SnO2 Cluster. The results show that there is a liner relationship between the gradient of the transient responses and activation energies for carboxylic and alcoholic gases. Transient response will be predicted from activation energy in the same kind of gas and the smell discrimination by single semiconductor gas sensor will be realized by this relationship.

Experiments on active isolation using distributed PVDF error sensors

NASA Technical Reports Server (NTRS)

Lefebvre, S.; Guigou, C.; Fuller, C. R.

1992-01-01

A control system based on a two-channel narrow-band LMS algorithm is used to isolate periodic vibration at low frequencies on a structure composed of a rigid top plate mounted on a flexible receiving plate. The control performance of distributed PVDF error sensors and accelerometer point sensors is compared. For both sensors, high levels of global reduction, up to 32 dB, have been obtained. It is found that, by driving the PVDF strip output voltage to zero, the controller may force the structure to vibrate so that the integration of the strain under the length of the PVDF strip is zero. This ability of the PVDF sensors to act as spatial filters is especially relevant in active control of sound radiation. It is concluded that the PVDF sensors are flexible, nonfragile, and inexpensive and can be used as strain sensors for active control applications of vibration isolation and sound radiation.

Properties of tree rings in LSST sensors

DOE PAGES

Park, H. Y.; Nomerotski, A.; Tsybychev, D.

2017-05-30

Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. Furthermore, these patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. Here, we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Treemore » ring pattern has a weak dependence on the wavelength. But the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.« less

Properties of tree rings in LSST sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, H. Y.; Nomerotski, A.; Tsybychev, D.

Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. Furthermore, these patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. Here, we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Treemore » ring pattern has a weak dependence on the wavelength. But the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.« less

Autonomous chemical and biological miniature wireless-sensor

NASA Astrophysics Data System (ADS)

Goldberg, Bar-Giora

2005-05-01

would take place within the miniature, low cost distributed sensor platforms. This concept however presents a significant challenge due to a combination and convergence of required new technologies, as mentioned above. Passive biological and chemical sensors with very high sensitivity and which require no assaying are in development using a technique to optically and chemically encode silicon wafers with tailored nanostructures. The silicon wafer is patterned with nano-structures designed to change colors ad patterns when exposed to the target analytes (TICs, TIMs, VOC). A small video camera detects the color and pattern changes on the sensor. To determine if an alarm condition is present, an on board DSP processor, using specialized image processing algorithms and statistical analysis, determines if color gradient changes occurred on the sensor array. These sensors can detect several agents simultaneously. This system is currently under development by Avaak, with funding from DARPA through an SBIR grant.

Compact Active Vibration Control System for a Flexible Panel

NASA Technical Reports Server (NTRS)

Schiller, Noah H. (Inventor); Cabell, Randolph H. (Inventor); Perey, Daniel F. (Inventor)

2014-01-01

A diamond-shaped actuator for a flexible panel has an inter-digitated electrode (IDE) and a piezoelectric wafer portion positioned therebetween. The IDE and/or the wafer portion are diamond-shaped. Point sensors are positioned with respect to the actuator and measure vibration. The actuator generates and transmits a cancelling force to the panel in response to an output signal from a controller, which is calculated using a signal describing the vibration. A method for controlling vibration in a flexible panel includes connecting a diamond-shaped actuator to the flexible panel, and then connecting a point sensor to each actuator. Vibration is measured via the point sensor. The controller calculates a proportional output voltage signal from the measured vibration, and transmits the output signal to the actuator to substantially cancel the vibration in proximity to each actuator.

Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

NASA Astrophysics Data System (ADS)

Skenes, Kevin; Kumar, Arkadeep; Prasath, R. G. R.; Danyluk, Steven

2018-02-01

Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear.

Accurate characterization of wafer bond toughness with the double cantilever specimen

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Spearing, S. Mark

2008-01-01

The displacement loaded double cantilever test, also referred to as the "Maszara test" and the "crack opening method" by the wafer bonding community, is a common technique used to evaluate the interface toughness or surface energy of direct wafer bonds. While the specimen is widely used, there has been a persistent question as to the accuracy of the method since the actual specimen geometry differs from the ideal beam geometry assumed in the expression used for data reduction. The effect of conducting the test on whole wafer pairs, in which the arms of cantilevers are wide plates rather than slender beams, is examined in this work using finite element analysis. A model is developed to predict the equilibrium shape of the crack front and to develop a corrected expression for calculating interface toughness from crack length measurements obtained in tests conducted on whole wafer pairs. The finite element model, which is validated through comparison to experiments, demonstrates that using the traditional beam theory-based expressions for data reduction can lead to errors of up to 25%.

Scatterometry on pelliclized masks: an option for wafer fabs

NASA Astrophysics Data System (ADS)

Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

2007-03-01

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

PubMed

Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

2016-01-15

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms. Copyright © 2015 Elsevier B.V. All rights reserved.

Wafer plane inspection with soft resist thresholding

NASA Astrophysics Data System (ADS)

Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

2008-10-01

Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just

MiRNA-181d Expression Significantly Affects Treatment Responses to Carmustine Wafer Implantation.

PubMed

Sippl, Christoph; Ketter, Ralf; Bohr, Lisa; Kim, Yoo Jin; List, Markus; Oertel, Joachim; Urbschat, Steffi

2018-05-26

Standard therapeutic protocols for glioblastoma, the most aggressive type of brain cancer, include surgery followed by chemoradiotherapy. Additionally, carmustine-eluting wafers can be implanted locally into the resection cavity. To evaluate microRNA (miRNA)-181d as a prognostic marker of responses to carmustine wafer implantation. A total of 80 glioblastoma patients (40/group) were included in a matched pair analysis. One group (carmustine wafer group) received concomitant chemoradiotherapy with carmustine wafer implantation (Stupp protocol). The second group (control group) received only concomitant chemoradiotherapy. All tumor specimens were subjected to evaluations of miRNA-181d expression, results were correlated with further individual clinical data. The Cancer Genome Atlas (TCGA) dataset of 149 patients was used as an independent cohort to validate the results. Patients in the carmustine wafer group with low miRNA-181d expression had significantly longer overall (hazard ratio [HR], 35.03, [95% confidence interval (CI): 3.50-350.23], P = .002) and progression-free survival (HR, 20.23, [95% CI: 2.19-186.86], P = .008) than patients of the same group with a high miRNA-181d expression. These correlations were not observed in the control group. The nonsignificance in the control group was confirmed in the independent TCGA dataset. The carmustine wafer group patients with low miRNA-181d expression also had a significantly longer progression-free (P = .049) and overall survival (OS) (P = .034), compared with control group patients. Gross total resection correlated significantly with longer OS (P = .023). MiRNA-181d expression significantly affects treatment responses to carmustine wafer implantation.

Grain-boundary type and distribution in silicon carbide coatings and wafers

NASA Astrophysics Data System (ADS)

Cancino-Trejo, Felix; López-Honorato, Eddie; Walker, Ross C.; Ferrer, Romelia Salomon

2018-03-01

Silicon carbide is the main diffusion barrier against metallic fission products in TRISO (tristructural isotropic) coated fuel particles. The explanation of the accelerated diffusion of silver through SiC has remained a challenge for more than four decades. Although, it is now well accepted that silver diffuse through SiC by grain boundary diffusion, little is known about the characteristics of the grain boundaries in SiC and how these change depending on the type of sample. In this work five different types (coatings and wafers) of SiC produced by chemical vapor deposition were characterized by electron backscatter diffraction (EBSD). The SiC in TRISO particles had a higher concentration of high angle grain boundaries (aprox. 70%) compared to SiC wafers, which ranged between 30 and 60%. Similarly, SiC wafers had a higher concentration of low angle grain boundaries ranging between 15 and 30%, whereas TRISO particles only reached values of around 7%. The same trend remained when comparing the content of coincidence site lattice (CSL) boundaries, since SiC wafers showed a concentration of more than 30%, whilst TRISO particles had contents of around 20%. In all samples the largest fractions of CSL boundaries (3 ≤ Σ ≤ 17) were the Σ3 boundaries. We show that there are important differences between the SiC in TRISO particles and SiC wafers which could explain some of the differences observed in diffusion experiments in the literature.

Active thermal isolation for temperature responsive sensors

NASA Technical Reports Server (NTRS)

Martinson, Scott D. (Inventor); Gray, David L. (Inventor); Carraway, Debra L. (Inventor); Reda, Daniel C. (Inventor)

1994-01-01

The detection of flow transition between laminar and turbulent flow and of shear stress or skin friction of airfoils is important in basic research for validation of airfoil theory and design. These values are conventionally measured using hot film nickel sensors deposited on a polyimide substrate. The substrate electrically insulates the sensor and underlying airfoil but is prevented from thermally isolating the sensor by thickness constraints necessary to avoid flow contamination. Proposed heating of the model surface is difficult to control, requires significant energy expenditures, and may alter the basic flow state of the airfoil. A temperature responsive sensor is located in the airflow over the specified surface of a body and is maintained at a constant temperature. An active thermal isolator is located between this temperature responsive sensor and the specific surface of the body. The total thickness of the isolator and sensor avoid any contamination of the flow. The temperature of this isolator is controlled to reduce conductive heat flow from the temperature responsive sensor to the body. This temperature control includes (1) operating the isolator at the same temperature as the constant temperature of the sensor; and (2) establishing a fixed boundary temperature which is either less than or equal to, or slightly greater than the sensor constant temperature. The present invention accordingly thermally isolates a temperature responsive sensor in an energy efficient, controllable manner while avoiding any contamination of the flow.

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

NASA Astrophysics Data System (ADS)

Miki, N.; Spearing, S. M.

2003-11-01

Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness, however, this relationship has not been quantified. This article explicitly correlates the bond quality, which is quantified by the apparent bonding energy, and the surface morphology via the bearing ratio, which describes the area of surface lying above a given depth. The apparent bonding energy is considered to be proportional to the real area of contact. The effective area of contact is defined as the area sufficiently close to contribute to the attractive force between the two bonding wafers. Experiments were conducted with silicon wafers whose surfaces were roughened by a buffered oxide etch solution (BOE, HF:NH4F=1:7) and/or a potassium hydroxide solution. The surface roughness was measured by atomic force microscopy. The wafers were direct bonded to polished "monitor" wafers following a standard RCA cleaning and the resulting bonding energy was measured by the crack-opening method. The experimental results revealed a clear correlation between the bonding energy and the bearing ratio. A bearing depth of ˜1.4 nm was found to be appropriate for the characterization of direct-bonded silicon at room temperature, which is consistent with the thickness of the water layer at the interface responsible for the hydrogen bonds that link the mating wafers.

16 CFR § 1211.13 - Inherent force activated secondary door sensors.

Code of Federal Regulations, 2013 CFR

2013-01-01

... sensors. § 1211.13 Section § 1211.13 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER... Standard § 1211.13 Inherent force activated secondary door sensors. (a) Normal operation test. (1) A force activated door sensor of a door system installed according to the installation instructions shall actuate...

Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters

NASA Astrophysics Data System (ADS)

Wu, Aimin; Wang, Xi; Wei, Xing; Chen, Jing; Chen, Ming; Zhang, Zhengxuan

2009-05-01

Si ion-implantation and post annealing of silicon wafers prior to wafer bonding were used to radiation-harden the thermal oxide layer of Silicon on Insulator structures. After grinding and polishing, Total-Dose-Radiation-Hardened SOI (TDRH-SOI) wafers with several-micron-thick device layers were prepared. Electrical characterization before and after X-ray irradiation showed that the flatband voltage shift induced by irradiation was reduced by this preprocessing. Photoluminescence Spectroscopy (PL), Transmission Electron Microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results indicated that the improvement of the total dose response of the TDRH-SOI wafer was associated with formation of Si nanoclusters in the implanted oxide layer, suggesting that these were the likely candidates for electron and proton trapping centers that reduce the positive charge buildup effect in the buried oxide.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Multi-sensor physical activity recognition in free-living.

PubMed

Ellis, Katherine; Godbole, Suneeta; Kerr, Jacqueline; Lanckriet, Gert

Physical activity monitoring in free-living populations has many applications for public health research, weight-loss interventions, context-aware recommendation systems and assistive technologies. We present a system for physical activity recognition that is learned from a free-living dataset of 40 women who wore multiple sensors for seven days. The multi-level classification system first learns low-level codebook representations for each sensor and uses a random forest classifier to produce minute-level probabilities for each activity class. Then a higher-level HMM layer learns patterns of transitions and durations of activities over time to smooth the minute-level predictions. [Formula: see text].

Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

PubMed

Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

2013-11-22

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, S.; Yan, F.; Dorn, D.

2012-06-01

Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect bandmore » images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.« less

Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques

NASA Astrophysics Data System (ADS)

Syed, Ahmed Rashid

Among the great physical challenges faced by the current front-end semiconductor equipment manufacturers is the accurate and repeatable surface temperature measurement of wafers during various fabrication steps. Close monitoring of temperature is essential in that it ensures desirable device characteristics to be reliably reproduced across various wafer lots. No where is the need to control temperature more pronounced than it is during Rapid Thermal Processing (RTP) which involves temperature ramp rates in excess of 200°C/s. This dissertation presents an elegant and practical approach to solve the wafer surface temperature estimation problem, in context of RTP, by deploying hardware that acquires the necessary data while preserving the integrity and purity of the wafer. In contrast to the widely used wafer-contacting (and hence contaminating) methods, such as bonded thermocouples, or environment sensitive schemes, such as light-pipes and infrared pyrometry, the proposed research explores the concept of utilizing Lamb (acoustic) waves to detect changes in wafer surface temperature, during RTP. Acoustic waves are transmitted to the wafer via an array of quartz rods that normally props the wafer inside an RTP chamber. These waves are generated using piezoelectric transducers affixed to the bases of the quartz rods. The group velocity of Lamb waves traversing the wafer surface undergoes a monotonic decrease with rise in wafer temperature. The correspondence of delay in phase of the received Lamb waves and the ambient temperature, along all direct paths between sending and receiving transducers, yields a psuedo real-time thermal image of the wafer. Although the custom built hardware-setup implements the above "proof-of-concept" scheme by transceiving acoustic signals at a single frequency, the real-world application will seek to enhance the data acquistion. rate (>1000 temperature measurements per seconds) by sending and receiving Lamb waves at multiple frequencies (by

Smoother Scribing of Silicon Wafers

NASA Technical Reports Server (NTRS)

Danyluk, S.

1986-01-01

Proposed new tool used to scribe silicon wafers into chips more smoothly than before. New scriber produces surface that appears ductile. Scribed groove cuts have relatively smooth walls. Scriber consists of diamond pyramid point on rigid shaft. Ethanol flows through shaft and around point, like ink in ballpoint pen. Ethanol has significantly different effect for scribing silicon than water, used in conventional diamond scribers.

Commercial production of QWIP wafers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Fastenau, J. M.; Liu, W. K.; Fang, X. M.; Lubyshev, D. I.; Pelzel, R. I.; Yurasits, T. R.; Stewart, T. R.; Lee, J. H.; Li, S. S.; Tidrow, M. Z.

2001-06-01

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

Active Sensing System with In Situ Adjustable Sensor Morphology

PubMed Central

Nurzaman, Surya G.; Culha, Utku; Brodbeck, Luzius; Wang, Liyu; Iida, Fumiya

2013-01-01

Background Despite the widespread use of sensors in engineering systems like robots and automation systems, the common paradigm is to have fixed sensor morphology tailored to fulfill a specific application. On the other hand, robotic systems are expected to operate in ever more uncertain environments. In order to cope with the challenge, it is worthy of note that biological systems show the importance of suitable sensor morphology and active sensing capability to handle different kinds of sensing tasks with particular requirements. Methodology This paper presents a robotics active sensing system which is able to adjust its sensor morphology in situ in order to sense different physical quantities with desirable sensing characteristics. The approach taken is to use thermoplastic adhesive material, i.e. Hot Melt Adhesive (HMA). It will be shown that the thermoplastic and thermoadhesive nature of HMA enables the system to repeatedly fabricate, attach and detach mechanical structures with a variety of shape and size to the robot end effector for sensing purposes. Via active sensing capability, the robotic system utilizes the structure to physically probe an unknown target object with suitable motion and transduce the arising physical stimuli into information usable by a camera as its only built-in sensor. Conclusions/Significance The efficacy of the proposed system is verified based on two results. Firstly, it is confirmed that suitable sensor morphology and active sensing capability enables the system to sense different physical quantities, i.e. softness and temperature, with desirable sensing characteristics. Secondly, given tasks of discriminating two visually indistinguishable objects with respect to softness and temperature, it is confirmed that the proposed robotic system is able to autonomously accomplish them. The way the results motivate new research directions which focus on in situ adjustment of sensor morphology will also be discussed. PMID:24416094

Surface modification of silicon wafer by grafting zwitterionic polymers to improve its antifouling property

NASA Astrophysics Data System (ADS)

Sun, Yunlong; Chen, Changlin; Xu, Heng; Lei, Kun; Xu, Guanzhe; Zhao, Li; Lang, Meidong

2017-10-01

Silicon (111) wafer was modified by triethoxyvinylsilane containing double bond as an intermedium, and then P4VP (polymer 4-vinyl pyridine) brush was "grafted" onto the surface of silicon wafer containing reactive double bonds by adopting the "grafting from" way and Si-P4VP substrate (silicon wafer grafted by P4VP) was obtained. Finally, P4VP brush of Si-P4VP substrate was modified by 1,3-propanesulfonate fully to obtain P4VP-psl brush (zwitterionic polypyridinium salt) and the functional Si-P4VP-psl substrate (silicon wafer grafted by zwitterionic polypyridinium salt based on polymer 4-vinyl pyridine) was obtained successfully. The antifouling property of the silicon wafer, the Si-P4VP substrate and the Si-P4VP-psl substrate was investigated by using bovine serum albumin, mononuclear macrophages (RAW 264.7) and Escherichia coli (E. coli) ATTC25922 as model bacterium. The results showed that compared with the blank sample-silicon wafer, the Si-P4VP-psl substrate had excellent anti-adhesion ability against bovine serum albumin, cells and bacterium, due to zwitterionic P4VP-psl brush (polymer 4-vinyl pyridine salt) having special functionality like antifouling ability on biomaterial field.

Yield impact for wafer shape misregistration-based binning for overlay APC diagnostic enhancement

NASA Astrophysics Data System (ADS)

Jayez, David; Jock, Kevin; Zhou, Yue; Govindarajulu, Venugopal; Zhang, Zhen; Anis, Fatima; Tijiwa-Birk, Felipe; Agarwal, Shivam

2018-03-01

The importance of traditionally acceptable sources of variation has started to become more critical as semiconductor technologies continue to push into smaller technology nodes. New metrology techniques are needed to pursue the process uniformity requirements needed for controllable lithography. Process control for lithography has the advantage of being able to adjust for cross-wafer variability, but this requires that all processes are close in matching between process tools/chambers for each process. When this is not the case, the cumulative line variability creates identifiable groups of wafers1 . This cumulative shape based effect is described as impacting overlay measurements and alignment by creating misregistration of the overlay marks. It is necessary to understand what requirements might go into developing a high volume manufacturing approach which leverages this grouping methodology, the key inputs and outputs, and what can be extracted from such an approach. It will be shown that this line variability can be quantified into a loss of electrical yield primarily at the edge of the wafer and proposes a methodology for root cause identification and improvement. This paper will cover the concept of wafer shape based grouping as a diagnostic tool for overlay control and containment, the challenges in implementing this in a manufacturing setting, and the limitations of this approach. This will be accomplished by showing that there are identifiable wafer shape based signatures. These shape based wafer signatures will be shown to be correlated to overlay misregistration, primarily at the edge. It will also be shown that by adjusting for this wafer shape signal, improvements can be made to both overlay as well as electrical yield. These improvements show an increase in edge yield, and a reduction in yield variability.

Method for wafer edge profile extraction using optical images obtained in edge defect inspection process

NASA Astrophysics Data System (ADS)

Okamoto, Hiroaki; Sakaguchi, Naoshi; Hayano, Fuminori

2010-03-01

It is becoming increasingly important to monitor wafer edge profiles in the immersion lithography era. A Nikon edge defect inspection tool acquires the circumferential optical images of the wafer edge during its inspection process. Nikon's unique illumination system and optics make it possible to then convert the brightness data of the captured images to quantifiable edge profile information. During this process the wafer's outer shape is also calculated. Test results show that even newly shipped bare wafers may not have a constant shape over 360 degree. In some cases repeated deformations with 90 degree pitch are observed.

Wafer-level radiometric performance testing of uncooled microbolometer arrays

NASA Astrophysics Data System (ADS)

Dufour, Denis G.; Topart, Patrice; Tremblay, Bruno; Julien, Christian; Martin, Louis; Vachon, Carl

2014-03-01

A turn-key semi-automated test system was constructed to perform on-wafer testing of microbolometer arrays. The system allows for testing of several performance characteristics of ROIC-fabricated microbolometer arrays including NETD, SiTF, ROIC functionality, noise and matrix operability, both before and after microbolometer fabrication. The system accepts wafers up to 8 inches in diameter and performs automated wafer die mapping using a microscope camera. Once wafer mapping is completed, a custom-designed quick insertion 8-12 μm AR-coated Germanium viewport is placed and the chamber is pumped down to below 10-5 Torr, allowing for the evaluation of package-level focal plane array (FPA) performance. The probe card is electrically connected to an INO IRXCAM camera core, a versatile system that can be adapted to many types of ROICs using custom-built interface printed circuit boards (PCBs). We currently have the capability for testing 384x288, 35 μm pixel size and 160x120, 52 μm pixel size FPAs. For accurate NETD measurements, the system is designed to provide an F/1 view of two rail-mounted blackbodies seen through the Germanium window by the die under test. A master control computer automates the alignment of the probe card to the dies, the positioning of the blackbodies, FPA image frame acquisition using IRXCAM, as well as data analysis and storage. Radiometric measurement precision has been validated by packaging dies measured by the automated probing system and re-measuring the SiTF and Noise using INO's pre-existing benchtop system.

Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface.

PubMed

Hayeck, Nathalie; Ravier, Sylvain; Gemayel, Rachel; Gligorovski, Sasho; Poulet, Irène; Maalouly, Jacqueline; Wortham, Henri

2015-11-01

Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer. As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds. Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time-Time of Flight-Mass Spectrometry (DART-ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group. Copyright © 2015 Elsevier B.V. All rights reserved.

Epitaxial gallium arsenide wafers

NASA Technical Reports Server (NTRS)

Black, J. F.; Robinson, L. B.

1971-01-01

The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.

Distributed Localization of Active Transmitters in a Wireless Sensor Network

DTIC Science & Technology

2012-03-01

Distributed Localization of Active Transmitters in a Wireless Sensor Network THESIS Oba L. Vincent, 2nd Lieutenant, USAF AFIT/GE/ENG/12-41 DEPARTMENT...protection in the United States. AFIT/GE/ENG/12-41 Distributed Localization of Active Transmitters in a Wireless Sensor Network THESIS Presented to the...Transmitters in a Wireless Sensor Network Oba L. Vincent, B.S.E.E. 2nd Lieutenant, USAF Approved: /signed/ 29 Feb 2012 Maj. Mark D. Silvius, Ph.D. (Chairman

Activity classification using realistic data from wearable sensors.

PubMed

Pärkkä, Juha; Ermes, Miikka; Korpipää, Panu; Mäntyjärvi, Jani; Peltola, Johannes; Korhonen, Ilkka

2006-01-01

Automatic classification of everyday activities can be used for promotion of health-enhancing physical activities and a healthier lifestyle. In this paper, methods used for classification of everyday activities like walking, running, and cycling are described. The aim of the study was to find out how to recognize activities, which sensors are useful and what kind of signal processing and classification is required. A large and realistic data library of sensor data was collected. Sixteen test persons took part in the data collection, resulting in approximately 31 h of annotated, 35-channel data recorded in an everyday environment. The test persons carried a set of wearable sensors while performing several activities during the 2-h measurement session. Classification results of three classifiers are shown: custom decision tree, automatically generated decision tree, and artificial neural network. The classification accuracies using leave-one-subject-out cross validation range from 58 to 97% for custom decision tree classifier, from 56 to 97% for automatically generated decision tree, and from 22 to 96% for artificial neural network. Total classification accuracy is 82 % for custom decision tree classifier, 86% for automatically generated decision tree, and 82% for artificial neural network.

Advances in process overlay on 300-mm wafers

NASA Astrophysics Data System (ADS)

Staecker, Jens; Arendt, Stefanie; Schumacher, Karl; Mos, Evert C.; van Haren, Richard J. F.; van der Schaar, Maurits; Edart, Remi; Demmerle, Wolfgang; Tolsma, Hoite

2002-07-01

Overlay budgets are getting tighter within 300 mm volume production and as a consequence the process effects on alignment and off-line metrology becomes more important. In a short loop experiment, with cleared reference marks in each image field, the isolated effect of processing was measured with a sub-nanometer accuracy. The examined processes are Shallow Trench Isolation (STI), Tungsten-Chemical Mechanical Processing (W-CMP) and resist spinning. The alignment measurements were done on an ASML TWINSCANT scanner and the off-line metrology measurements on a KLA Tencor. Mark type and mark position dependency of the process effects are analyzed. The mean plus 3 (sigma) of the maximum overlay after correcting batch average wafer parameters is used as an overlay performance indicator (OPI). 3 (sigma) residuals to the wafer-model are used as an indicator of the noise that is added by the process. The results are in agreement with existing knowledge of process effects on 200 mm wafers. The W-CMP process introduces an additional wafer rotation and scaling that is similar for alignment marks and metrology targets. The effects depend on the mark type; in general they get less severe for higher spatial frequencies. For a 7th order alignment mark, the OPI measured about 12 nm and the added noise about 12 nm. For the examined metrology targets the OPI is about 20 nm with an added noise of about 90 nm. Two different types of alignment marks were tested in the STI process, i.e., zero layer marks and marks that were exposed together with the STI product. The overlay contribution due to processing on both types of alignment marks is very low (smaller than 5 nm OPI) and independent on mark type. Some flyers are observed fot the zero layer marks. The flyers can be explained by the residues of oxide and nitride that is left behind in the spaces of the alignment marks. Resist spinning is examined on single layer resist and resist with an organic Bottom Anti-Reflective Coating (BARC

Wafer-size free-standing single-crystalline graphene device arrays

NASA Astrophysics Data System (ADS)

Li, Peng; Jing, Gaoshan; Zhang, Bo; Sando, Shota; Cui, Tianhong

2014-08-01

We report an approach of wafer-scale addressable single-crystalline graphene (SCG) arrays growth by using pre-patterned seeds to control the nucleation. The growth mechanism and superb properties of SCG were studied. Large array of free-standing SCG devices were realized. Characterization of SCG as nano switches shows excellent performance with life time (>22 000 times) two orders longer than that of other graphene nano switches reported so far. This work not only shows the possibility of producing wafer-scale high quality SCG device arrays but also explores the superb performance of SCG as nano devices.

Computational Modeling in Plasma Processing for 300 mm Wafers

NASA Technical Reports Server (NTRS)

Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

Migration toward 300 mm wafer size has been initiated recently due to process economics and to meet future demands for integrated circuits. A major issue facing the semiconductor community at this juncture is development of suitable processing equipment, for example, plasma processing reactors that can accomodate 300 mm wafers. In this Invited Talk, scaling of reactors will be discussed with the aid of computational fluid dynamics results. We have undertaken reactor simulations using CFD with reactor geometry, pressure, and precursor flow rates as parameters in a systematic investigation. These simulations provide guidelines for scaling up in reactor design.

Hand tremor and activity sensor

NASA Technical Reports Server (NTRS)

Konigsberg, E.

1975-01-01

System detects hand tremor and activity and transmitting signals over distance of at least 3 meters to receiver system. Designed for use in studies of effect of fatigue on individual's judgement or reaction time, sensor is installed within mounting of finger-ring; no external wiring or power source is needed.

Active pixel sensors with substantially planarized color filtering elements

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

1999-01-01

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

Mechanical Strength and Broadband Transparency Improvement of Glass Wafers via Surface Nanostructures.

PubMed

Kumar, Amarendra; Kashyap, Kunal; Hou, Max T; Yeh, J Andrew

2016-06-17

In this study, we mechanically strengthened a borosilicate glass wafer by doubling its bending strength and simultaneously enhancing its transparency using surface nanostructures for different applications including sensors, displays and panels. A fabrication method that combines dry and wet etching is used for surface nanostructure fabrication. Specifically, we improved the bending strength of plain borosilicate glass by 96% using these surface nanostructures on both sides. Besides bending strength improvement, a limited optical transmittance enhancement of 3% was also observed in the visible light wavelength region (400-800 nm). Both strength and transparency were improved by using surface nanostructures of 500 nm depth on both sides of the borosilicate glass without affecting its bulk properties or the glass manufacturing process. Moreover, we observed comparatively smaller fragments during the breaking of the nanostructured glass, which is indicative of strengthening. The range for the nanostructure depth is defined for different applications with which improvements of the strength and transparency of borosilicate glass substrate are obtained.

Mechanical Strength and Broadband Transparency Improvement of Glass Wafers via Surface Nanostructures

PubMed Central

Kumar, Amarendra; Kashyap, Kunal; Hou, Max T.; Yeh, J. Andrew

2016-01-01

In this study, we mechanically strengthened a borosilicate glass wafer by doubling its bending strength and simultaneously enhancing its transparency using surface nanostructures for different applications including sensors, displays and panels. A fabrication method that combines dry and wet etching is used for surface nanostructure fabrication. Specifically, we improved the bending strength of plain borosilicate glass by 96% using these surface nanostructures on both sides. Besides bending strength improvement, a limited optical transmittance enhancement of 3% was also observed in the visible light wavelength region (400–800 nm). Both strength and transparency were improved by using surface nanostructures of 500 nm depth on both sides of the borosilicate glass without affecting its bulk properties or the glass manufacturing process. Moreover, we observed comparatively smaller fragments during the breaking of the nanostructured glass, which is indicative of strengthening. The range for the nanostructure depth is defined for different applications with which improvements of the strength and transparency of borosilicate glass substrate are obtained. PMID:27322276

Calibrating a novel multi-sensor physical activity measurement system.

PubMed

John, D; Liu, S; Sasaki, J E; Howe, C A; Staudenmayer, J; Gao, R X; Freedson, P S

2011-09-01

Advancing the field of physical activity (PA) monitoring requires the development of innovative multi-sensor measurement systems that are feasible in the free-living environment. The use of novel analytical techniques to combine and process these multiple sensor signals is equally important. This paper describes a novel multi-sensor 'integrated PA measurement system' (IMS), the lab-based methodology used to calibrate the IMS, techniques used to predict multiple variables from the sensor signals, and proposes design changes to improve the feasibility of deploying the IMS in the free-living environment. The IMS consists of hip and wrist acceleration sensors, two piezoelectric respiration sensors on the torso, and an ultraviolet radiation sensor to obtain contextual information (indoors versus outdoors) of PA. During lab-based calibration of the IMS, data were collected on participants performing a PA routine consisting of seven different ambulatory and free-living activities while wearing a portable metabolic unit (criterion measure) and the IMS. Data analyses on the first 50 adult participants are presented. These analyses were used to determine if the IMS can be used to predict the variables of interest. Finally, physical modifications for the IMS that could enhance the feasibility of free-living use are proposed and refinement of the prediction techniques is discussed.

Electro-active sensor, method for constructing the same; apparatus and circuitry for detection of electro-active species

NASA Technical Reports Server (NTRS)

Buehler, Martin (Inventor)

2009-01-01

An electro-active sensor includes a nonconductive platform with a first electrode set attached with a first side of a nonconductive platform. The first electrode set serves as an electrochemical cell that may be utilized to detect electro-active species in solution. A plurality of electrode sets and a variety of additional electrochemical cells and sensors may be attached with the nonconductive platform. The present invention also includes a method for constructing the aforementioned electro-active sensor. Additionally, an apparatus for detection and observation is disclosed, where the apparatus includes a sealable chamber for insertion of a portion of an electro-active sensor. The apparatus allows for monitoring and detection activities. Allowing for control of attached cells and sensors, a dual-mode circuitry is also disclosed. The dual-mode circuitry includes a switch, allowing the circuitry to be switched from a potentiostat to a galvanostat mode.

Complex Human Activity Recognition Using Smartphone and Wrist-Worn Motion Sensors.

PubMed

Shoaib, Muhammad; Bosch, Stephan; Incel, Ozlem Durmaz; Scholten, Hans; Havinga, Paul J M

2016-03-24

The position of on-body motion sensors plays an important role in human activity recognition. Most often, mobile phone sensors at the trouser pocket or an equivalent position are used for this purpose. However, this position is not suitable for recognizing activities that involve hand gestures, such as smoking, eating, drinking coffee and giving a talk. To recognize such activities, wrist-worn motion sensors are used. However, these two positions are mainly used in isolation. To use richer context information, we evaluate three motion sensors (accelerometer, gyroscope and linear acceleration sensor) at both wrist and pocket positions. Using three classifiers, we show that the combination of these two positions outperforms the wrist position alone, mainly at smaller segmentation windows. Another problem is that less-repetitive activities, such as smoking, eating, giving a talk and drinking coffee, cannot be recognized easily at smaller segmentation windows unlike repetitive activities, like walking, jogging and biking. For this purpose, we evaluate the effect of seven window sizes (2-30 s) on thirteen activities and show how increasing window size affects these various activities in different ways. We also propose various optimizations to further improve the recognition of these activities. For reproducibility, we make our dataset publicly available.

Complex Human Activity Recognition Using Smartphone and Wrist-Worn Motion Sensors

PubMed Central

Shoaib, Muhammad; Bosch, Stephan; Incel, Ozlem Durmaz; Scholten, Hans; Havinga, Paul J. M.

2016-01-01

The position of on-body motion sensors plays an important role in human activity recognition. Most often, mobile phone sensors at the trouser pocket or an equivalent position are used for this purpose. However, this position is not suitable for recognizing activities that involve hand gestures, such as smoking, eating, drinking coffee and giving a talk. To recognize such activities, wrist-worn motion sensors are used. However, these two positions are mainly used in isolation. To use richer context information, we evaluate three motion sensors (accelerometer, gyroscope and linear acceleration sensor) at both wrist and pocket positions. Using three classifiers, we show that the combination of these two positions outperforms the wrist position alone, mainly at smaller segmentation windows. Another problem is that less-repetitive activities, such as smoking, eating, giving a talk and drinking coffee, cannot be recognized easily at smaller segmentation windows unlike repetitive activities, like walking, jogging and biking. For this purpose, we evaluate the effect of seven window sizes (2–30 s) on thirteen activities and show how increasing window size affects these various activities in different ways. We also propose various optimizations to further improve the recognition of these activities. For reproducibility, we make our dataset publicly available. PMID:27023543

Laser treatment of plasma-hydrogenated silicon wafers for thin layer exfoliation

NASA Astrophysics Data System (ADS)

Ghica, Corneliu; Nistor, Leona Cristina; Teodorescu, Valentin Serban; Maraloiu, Adrian; Vizireanu, Sorin; Scarisoreanu, Nae Doinel; Dinescu, Maria

2011-03-01

We have studied by transmission electron microscopy the microstructural effects induced by pulsed laser annealing in comparison with thermal treatments of RF plasma hydrogenated Si wafers aiming for further application in the smart-cut procedure. While thermal annealing mainly produces a slight decrease of the density of plasma-induced planar defects and an increase of the size and number of plasma-induced nanocavities in the Si matrix, pulsed laser annealing of RF plasma hydrogenated Si wafers with a 355 nm wavelength radiation results in both the healing of defects adjacent to the wafer surface and the formation of a well defined layer of nanometric cavities at a depth of 25-50 nm. In this way, a controlled fracture of single crystal layers of Si thinner than 50 nm is favored.

Method for making circular tubular channels with two silicon wafers

DOEpatents

Yu, C.M.; Hui, W.C.

1996-11-19

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si{sub 3}N{sub 4}) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO{sub 3}/CH{sub 3}COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary. 11 figs.

Method for making circular tubular channels with two silicon wafers

DOEpatents

Yu, Conrad M.; Hui, Wing C.

1996-01-01

A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si.sub.3 N.sub.4) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO.sub.3 /CH.sub.3 COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary.

Resonance ultrasonic diagnostics of defects in full-size silicon wafers

NASA Astrophysics Data System (ADS)

Belyaev, A.; Ostapenko, S.

2001-12-01

A resonance acoustic effect was observed recently in full-size 200 mm Cz-Si wafers and applied to characterize as-grown and process-induced defects. Ultrasonic vibrations can be excited into wafers using an external ultrasonic transducer and their amplitude is recorded using a scanning air-coupled acoustic probe operated in a non-contact mode. By sweeping driving frequency, f, of the transducer, we observed an amplification of a specific acoustic mode referred to as ‘whistle’. In this paper, we performed theoretical modeling of the whistle which allowed in attributing this mode to resonant flexural vibrations in a thin circular plate. We calculated normal frequencies of the flexural vibrations of a circular plate of radius ρ in the case of the free edge. The model gives an excellent fit to experimental data with regard to whistle spatial distribution. The results of calculation allow the evaluation of resonance acoustic effect in wafers of different geometries employed in the industry.

Active hydrothermal and non-active massive sulfide mound investigation using a new multiparameter chemical sensor

NASA Astrophysics Data System (ADS)

Han, C.; Wu, G.; Qin, H.; Wang, Z.

2012-12-01

Investigation of active hydrothermal mound as well as non-active massive sulfide mound are studied recently. However, there is still lack of in-situ detection method for the non-active massive sulfide mound. Even though Transient ElectroMagnetic (TEM) and Electric Self-potential (SP) methods are good, they both are labour, time and money cost work. We proposed a new multiparameter chemical sensor method to study the seafloor active hydrothermal mound as well as non-active massive sulfide mound. This sensor integrates Eh, S2- ions concentration and pH electrochemical electrodes together, and could found chemical change caused by the active hydrothermal vent, even weak chemical abnormalities by non-active massive sulfide hydrothermal mound which MARP and CTD sometimes cannot detect. In 2012, the 1st Leg of the Chinese 26th cruise, the multiparameter chemical sensor was carried out with the deepsea camera system over the Carlsberg Ridge in Indian Ocean by R/V DAYANGYIHAO. It was shown small Eh and S2- ions concentration abnormal around a site at Northwest Indian ridge. This site was also evidenced by the TV grab. In the 2nd Leg of the same cruise in June, this chemical sensor was carried out with TEM and SP survey system. The chemical abnormalities are matched very well with both TEM and SP survey results. The results show that the multiparameter chemical sensor method not only can detect active hydrothermal mound, but also can find the non-active massive sulfide hydrothermal mound.

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

NASA Astrophysics Data System (ADS)

Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

2017-08-01

Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

First results on DEPFET Active Pixel Sensors fabricated in a CMOS foundry—a promising approach for new detector development and scientific instrumentation

NASA Astrophysics Data System (ADS)

Aschauer, S.; Majewski, P.; Lutz, G.; Soltau, H.; Holl, P.; Hartmann, R.; Schlosser, D.; Paschen, U.; Weyers, S.; Dreiner, S.; Klusmann, M.; Hauser, J.; Kalok, D.; Bechteler, A.; Heinzinger, K.; Porro, M.; Titze, B.; Strüder, L.

2017-11-01

DEPFET Active Pixel Sensors (APS) have been introduced as focal plane detectors for X-ray astronomy already in 1996. Fabricated on high resistivity, fully depleted silicon and back-illuminated they can provide high quantum efficiency and low noise operation even at very high read rates. In 2009 a new type of DEPFET APS, the DSSC (DEPFET Sensor with Signal Compression) was developed, which is dedicated to high-speed X-ray imaging at the European X-ray free electron laser facility (EuXFEL) in Hamburg. In order to resolve the enormous contrasts occurring in Free Electron Laser (FEL) experiments, this new DSSC-DEPFET sensor has the capability of nonlinear amplification, that is, high gain for low intensities in order to obtain single-photon detection capability, and reduced gain for high intensities to achieve high dynamic range for several thousand photons per pixel and frame. We call this property "signal compression". Starting in 2015, we have been fabricating DEPFET sensors in an industrial scale CMOS foundry maintaining the outstanding proven DEPFET properties and adding new capabilities due to the industrial-scale CMOS process. We will highlight these additional features and describe the progress achieved so far. In a first attempt on double-sided polished 725 μm thick 200 mm high resistivity float zone silicon wafers all relevant device related properties have been measured, such as leakage current, depletion voltage, transistor characteristics, noise and energy resolution for X-rays and the nonlinear response. The smaller feature size provided by the new technology allows for an advanced design and significant improvements in device performance. A brief summary of the present status will be given as well as an outlook on next steps and future perspectives.

Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor

PubMed Central

TalebiFard, Sahba; Schmidt, Shon; Shi, Wei; Wu, WenXuan; Jaeger, Nicolas A. F.; Kwok, Ezra; Ratner, Daniel M.; Chrostowski, Lukas

2017-01-01

Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU. PMID:28270963

Active Multimodal Sensor System for Target Recognition and Tracking

PubMed Central

Zhang, Guirong; Zou, Zhaofan; Liu, Ziyue; Mao, Jiansen

2017-01-01

High accuracy target recognition and tracking systems using a single sensor or a passive multisensor set are susceptible to external interferences and exhibit environmental dependencies. These difficulties stem mainly from limitations to the available imaging frequency bands, and a general lack of coherent diversity of the available target-related data. This paper proposes an active multimodal sensor system for target recognition and tracking, consisting of a visible, an infrared, and a hyperspectral sensor. The system makes full use of its multisensor information collection abilities; furthermore, it can actively control different sensors to collect additional data, according to the needs of the real-time target recognition and tracking processes. This level of integration between hardware collection control and data processing is experimentally shown to effectively improve the accuracy and robustness of the target recognition and tracking system. PMID:28657609

Validation of mercury tip-switch and accelerometer activity sensors for identifying resting and active behavior in bears

USGS Publications Warehouse

Jasmine Ware,; Rode, Karyn D.; Pagano, Anthony M.; Bromaghin, Jeffrey F.; Robbins, Charles T.; Joy Erlenbach,; Shannon Jensen,; Amy Cutting,; Nicole Nicassio-Hiskey,; Amy Hash,; Owen, Megan A.; Heiko Jansen,

2015-01-01

Activity sensors are often included in wildlife transmitters and can provide information on the behavior and activity patterns of animals remotely. However, interpreting activity-sensor data relative to animal behavior can be difficult if animals cannot be continuously observed. In this study, we examined the performance of a mercury tip-switch and a tri-axial accelerometer housed in collars to determine whether sensor data can be accurately classified as resting and active behaviors and whether data are comparable for the 2 sensor types. Five captive bears (3 polar [Ursus maritimus] and 2 brown [U. arctos horribilis]) were fitted with a collar specially designed to internally house the sensors. The bears’ behaviors were recorded, classified, and then compared with sensor readings. A separate tri-axial accelerometer that sampled continuously at a higher frequency and provided raw acceleration values from 3 axes was also mounted on the collar to compare with the lower resolution sensors. Both accelerometers more accurately identified resting and active behaviors at time intervals ranging from 1 minute to 1 hour (≥91.1% accuracy) compared with the mercury tip-switch (range = 75.5–86.3%). However, mercury tip-switch accuracy improved when sampled at longer intervals (e.g., 30–60 min). Data from the lower resolution accelerometer, but not the mercury tip-switch, accurately predicted the percentage of time spent resting during an hour. Although the number of bears available for this study was small, our results suggest that these activity sensors can remotely identify resting versus active behaviors across most time intervals. We recommend that investigators consider both study objectives and the variation in accuracy of classifying resting and active behaviors reported here when determining sampling interval.

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

A sensor and video based ontology for activity recognition in smart environments.

PubMed

Mitchell, D; Morrow, Philip J; Nugent, Chris D

2014-01-01

Activity recognition is used in a wide range of applications including healthcare and security. In a smart environment activity recognition can be used to monitor and support the activities of a user. There have been a range of methods used in activity recognition including sensor-based approaches, vision-based approaches and ontological approaches. This paper presents a novel approach to activity recognition in a smart home environment which combines sensor and video data through an ontological framework. The ontology describes the relationships and interactions between activities, the user, objects, sensors and video data.

Multivariable control of a rapid thermal processor using ultrasonic sensors

NASA Astrophysics Data System (ADS)

Dankoski, Paul C. P.

The semiconductor manufacturing industry faces the need for tighter control of thermal budget and process variations as circuit feature sizes decrease. Strategies to meet this need include supervisory control, run-to-run control, and real-time feedback control. Typically, the level of control chosen depends upon the actuation and sensing available. Rapid Thermal Processing (RTP) is one step of the manufacturing cycle requiring precise temperature control and hence real-time feedback control. At the outset of this research, the primary ingredient lacking from in-situ RTP temperature control was a suitable sensor. This research looks at an alternative to the traditional approach of pyrometry, which is limited by the unknown and possibly time-varying wafer emissivity. The technique is based upon the temperature dependence of the propagation time of an acoustic wave in the wafer. The aim of this thesis is to evaluate the ultrasonic sensors as a potentially viable sensor for control in RTP. To do this, an experimental implementation was developed at the Center for Integrated Systems. Because of the difficulty in applying a known temperature standard in an RTP environment, calibration to absolute temperature is nontrivial. Given reference propagation delays, multivariable model-based feedback control is applied to the system. The modelling and implementation details are described. The control techniques have been applied to a number of research processes including rapid thermal annealing and rapid thermal crystallization of thin silicon films on quartz/glass substrates.

Optical cavity furnace for semiconductor wafer processing

DOEpatents

Sopori, Bhushan L.

2014-08-05

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

"Performance Of A Wafer Stepper With Automatic Intra-Die Registration Correction."

NASA Astrophysics Data System (ADS)

van den Brink, M. A.; Wittekoek, S.; Linders, H. F. D.; van Hout, F. J.; George, R. A.

1987-01-01

An evaluation of a wafer stepper with the new improved Philips/ASM-L phase grating alignment system is reported. It is shown that an accurate alignment system needs an accurate X-Y-0 wafer stage and an accurate reticle Z stage to realize optimum overlay accuracy. This follows from a discussion of the overlay budget and an alignment procedure model. The accurate wafer stage permits high overlay accuracy using global alignment only, thus eliminating the throughput penalty of align-by-field schemes. The accurate reticle Z stage enables an intra-die magnification control with respect to the wafer scale. Various overlay data are reported, which have been measured with the automatic metrology program of the stepper. It is demonstrated that the new dual alignment system (with the external spatial filter) has improved the ability to align to weakly reflecting layers. The results are supported by a Fourier analysis of the alignment signal. Resolution data are given for the PAS 2500 projection lenses, which show that the high overlay accuracy of the system is properly matched with submicron linewidth control. The results of a recently introduced 20mm i-line lens with a numerical aperture of 0.4 (Zeiss 10-78-58) are included.

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, Bhushan; Basnyat, Prakash; Devayajanam, Srinivas

2017-01-01

We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-type, Czochralski wafers can be dissolved using a flash-annealing process, yielding very high quality wafers for high-efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperature between 1150 and 1250 degrees C for a short time. This process produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. We have tested wafers from different axial locations of two ingots. All wafers reach nearly the same high value of MCLT. The OPN dissolution is confirmed by oxygenmore » analysis using Fourier transform infrared spectra and injection-level dependence of MCLT.« less

Wafer-level manufacturing technology of glass microlenses

NASA Astrophysics Data System (ADS)

Gossner, U.; Hoeftmann, T.; Wieland, R.; Hansch, W.

2014-08-01

In high-tech products, there is an increasing demand to integrate glass lenses into complex micro systems. Especially in the lighting industry LEDs and laser diodes used for automotive applications require encapsulated micro lenses. To enable low-cost production, manufacturing of micro lenses on wafer level base using a replication technology is a key technology. This requires accurate forming of thousands of lenses with a diameter of 1-2 mm on a 200 mm wafer compliant with mass production. The article will discuss the technical aspects of a lens manufacturing replication process and the challenges, which need to be solved: choice of an appropriate master for replication, thermally robust interlayer coating, choice of replica glass, bonding and separation procedure. A promising approach for the master substrate material is based on a lens structured high-quality glass wafer with high melting point covered by a coating layer of amorphous silicon or germanium. This layer serves as an interlayer for the glass bonding process. Low pressure chemical vapor deposition and plasma enhanced chemical vapor deposition processes allow a deposition of layer coatings with different hydrogen and doping content influencing their chemical and physical behavior. A time reduced molding process using a float glass enables the formation of high quality lenses while preserving the recyclability of the mother substrate. The challenge is the separation of the replica from the master mold. An overview of chemical methods based on optimized etching of coating layer through small channels will be given and the impact of glass etching on surface roughness is discussed.

Graphene-Decorated Nanocomposites for Printable Electrodes in Thin Wafer Devices

NASA Astrophysics Data System (ADS)

Bakhshizadeh, N.; Sivoththaman, S.

2017-12-01

Printable electrodes that induce less stress and require lower curing temperatures compared to traditional screen-printed metal pastes are needed in thin wafer devices such as future solar cells, and in flexible electronics. The synthesis of nanocomposites by incorporating graphene nanopowders as well as silver nanowires into epoxy-based electrically conductive adhesives (ECA) is examined to improve electrical conductivity and to develop alternate printable electrode materials that induce less stress on the wafer. For the synthesized graphene and Ag nanowire-decorated ECA nanocomposites, the curing kinetics were studied by dynamic and isothermal differential scanning calorimetry measurements. Thermogravimetric analysis on ECA, ECA-AG and ECA/graphene nanopowder nanocomposites showed that the temperatures for onset of decomposition are higher than their corresponding glass transition temperature ( T g) indicating an excellent thermal resistance. Printed ECA/Ag nanowire nanocomposites showed 90% higher electrical conductivity than ECA films, whereas the ECA/graphene nanocomposites increased the conductivity by over two orders of magnitude. Scanning electron microscopy results also revealed the effect of fillers morphology on the conductivity improvement and current transfer mechanisms in nanocomposites. Residual stress analysis performed on Si wafers showed that the ECA and nanocomposite printed wafers are subjected to much lower stress compared to those printed with metallic pastes. The observed parameters of low curing temperature, good thermal resistance, reasonably high conductivity, and low residual stress in the ECA/graphene nanocomposite makes this material a promising alternative in screen-printed electrode formation in thin substrates.

Ion microprobe elemental analyses of impact features on interplanetary dust experiment sensor surfaces

NASA Technical Reports Server (NTRS)

Simon, Charles G.; Hunter, Jerry L.; Wortman, Jim J.; Griffis, Dieter P.

1992-01-01

Hypervelocity impact features from very small particles (less than 3 microns in diameter) on several of the electro-active dust sensors used in the Interplanetary Dust Experiment (IDE) were subjected to elemental analysis using an ion microscope. The same analytical techniques were applied to impact and containment features on a set of ultra-pure, highly polished single crystal germanium wafer witness plates that were mounted on tray B12. Very little unambiguously identifiable impactor debris was found in the central craters or shatter zones of small impacts in this crystalline surface. The surface contamination, ubiquitous on the surface of the Long Duration Exposure Facility, has greatly complicated data collection and interpretation from microparticle impacts on all surfaces.

Chemical method for producing smooth surfaces on silicon wafers

DOEpatents

Yu, Conrad

2003-01-01

An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

Polarized Optical Scattering Measurements of Metallic Nanoparticles on a Thin Film Silicon Wafer

NASA Astrophysics Data System (ADS)

Liu, Cheng-Yang; Liu, Tze-An; Fu, Wei-En

2009-09-01

Light scattering has shown its powerful diagnostic capability to characterize optical quality surfaces. In this study, the theory of bidirectional reflectance distribution function (BRDF) was used to analyze the metallic nanoparticles' sizes on wafer surfaces. The BRDF of a surface is defined as the angular distribution of radiance scattered by the surface normalized by the irradiance incident on the surface. A goniometric optical scatter instrument has been developed to perform the BRDF measurements on polarized light scattering on wafer surfaces for the diameter and distribution measurements of metallic nanoparticles. The designed optical scatter instrument is capable of distinguishing various types of optical scattering characteristics, which are corresponding to the diameters of the metallic nanoparticles, near surfaces by using the Mueller matrix calculation. The metallic nanoparticle diameter of measurement is 60 nm on 2 inch thin film wafers. These measurement results demonstrate that the polarization of light scattered by metallic particles can be used to determine the size of metallic nanoparticles on silicon wafers.

Sensors and Micromachined Devices for the Automotive and New Markets: The Delphi Delco Electronics MEMS Story.

NASA Astrophysics Data System (ADS)

Logsdon, James

2002-03-01

This presentation will provide a brief history of the development of MEMS products and technology, beginning with the manifold absolute pressure sensor in the late seventies through the current variety of Delphi Delco Electronics sensors available today. The technology development of micromachining from uncompensated P plus etch stops to deep reactive ion etching and the technology development of wafer level packaging from electrostatic bonding to glass frit sealing and silicon to silicon direct bonding will be reviewed.

Recognition of military-specific physical activities with body-fixed sensors.

PubMed

Wyss, Thomas; Mäder, Urs

2010-11-01

The purpose of this study was to develop and validate an algorithm for recognizing military-specific, physically demanding activities using body-fixed sensors. To develop the algorithm, the first group of study participants (n = 15) wore body-fixed sensors capable of measuring acceleration, step frequency, and heart rate while completing six military-specific activities: walking, marching with backpack, lifting and lowering loads, lifting and carrying loads, digging, and running. The accuracy of the algorithm was tested in these isolated activities in a laboratory setting (n = 18) and in the context of daily military training routine (n = 24). The overall recognition rates during isolated activities and during daily military routine activities were 87.5% and 85.5%, respectively. We conclude that the algorithm adequately recognized six military-specific physical activities based on sensor data alone both in a laboratory setting and in the military training environment. By recognizing type of physical activities this objective method provides additional information on military-job descriptions.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Phosphatase activity tunes two-component system sensor detection threshold.

PubMed

Landry, Brian P; Palanki, Rohan; Dyulgyarov, Nikola; Hartsough, Lucas A; Tabor, Jeffrey J

2018-04-12

Two-component systems (TCSs) are the largest family of multi-step signal transduction pathways in biology, and a major source of sensors for biotechnology. However, the input concentrations to which biosensors respond are often mismatched with application requirements. Here, we utilize a mathematical model to show that TCS detection thresholds increase with the phosphatase activity of the sensor histidine kinase. We experimentally validate this result in engineered Bacillus subtilis nitrate and E. coli aspartate TCS sensors by tuning their detection threshold up to two orders of magnitude. We go on to apply our TCS tuning method to recently described tetrathionate and thiosulfate sensors by mutating a widely conserved residue previously shown to impact phosphatase activity. Finally, we apply TCS tuning to engineer B. subtilis to sense and report a wide range of fertilizer concentrations in soil. This work will enable the engineering of tailor-made biosensors for diverse synthetic biology applications.

Evaluation of a cyanoacrylate dressing to manage peristomal skin alterations under ostomy skin barrier wafers.

PubMed

Milne, Catherine T; Saucier, Darlene; Trevellini, Chenel; Smith, Juliet

2011-01-01

Peristomal skin alterations under ostomy barrier wafers are a commonly reported problem. While a number of interventions to manage this issue have been reported, the use of a topically applied cyanoacrylate has received little attention. This case series describes the use of a topical cyanoacrylate for the management of peristomal skin alterations in persons living with an ostomy. Using a convenience sample, the topical cyanoacrylate dressing was applied to 11 patients with peristomal skin disruption under ostomy wafers in acute care and outpatient settings. The causes of barrier function interruption were also addressed to enhance outcomes. Patients were assessed for wound discomfort using a Likert Scale, time to healing, and number of appliance changes. Patient satisfaction was also examined. Average reported discomfort levels were 9.5 out of 10 at the initial peristomal irritation assessment visit decreased to 3.5 at the first wafer change and were absent by the second wafer change. Wafers had increasing wear time between changes in both settings with acute care patients responding faster. Epidermal resurfacing occurred within 10.2 days in outpatients and within 7 days in acute care patients. Because of the skin sealant action of this dressing, immediate adherence of the wafer was reported at all pouch changes.

Lyophilised wafers as vehicles for the topical release of chlorhexidine digluconate--release kinetics and efficacy against Pseudomonas aeruginosa.

PubMed

Labovitiadi, Olga; Lamb, Andrew J; Matthews, Kerr H

2012-12-15

There is a requirement to deliver accurate amounts of broad spectrum antimicrobial compounds locally to exuding wounds. Varying amounts of exudate complicates this process by limiting the residence and therefore efficacy of active substances. Minimum bactericidal concentrations (MBC) of antimicrobials are necessary to suppress infection and lessen the chances of resistant strains of potentially pathogenic bacteria from prevailing. Polysaccharide wafers can adhere to exudating wound beds, absorbing fluids and forming highly viscous gels that remain in situ for prolonged periods of time to release sustained amounts of antimicrobial. In this study, five different formulations were produced containing the antimicrobial, chlorhexidine digluconate (CHD). Absorption of simulated wound fluid, resultant rheological properties of gels and efficacy against plated cultures of Pseudomonas aeruginosa were measured and compared. CHD reduced the 'water uptake' of wafers by 11-50% (w/w) and decreased the rheological consistency of non-SA containing gels by 10-65%. Release studies indicated that karaya wafers gave the highest sustained release of CHD, >60 μg/mL in 24 h, well in excess of the MBC for P. aeruginosa. Release kinetics indicated an anomalous diffusion mechanism according to Korsmeyer-Peppas, with diffusion exponents varying from 0.31 to 0.41 for most wafers except xanthan (0.65). Copyright © 2012 Elsevier B.V. All rights reserved.

Sensor web enables rapid response to volcanic activity

USGS Publications Warehouse

Davies, Ashley G.; Chien, Steve; Wright, Robert; Miklius, Asta; Kyle, Philip R.; Welsh, Matt; Johnson, Jeffrey B.; Tran, Daniel; Schaffer, Steven R.; Sherwood, Robert

2006-01-01

Rapid response to the onset of volcanic activity allows for the early assessment of hazard and risk [Tilling, 1989]. Data from remote volcanoes and volcanoes in countries with poor communication infrastructure can only be obtained via remote sensing [Harris et al., 2000]. By linking notifications of activity from ground-based and spacebased systems, these volcanoes can be monitored when they erupt.Over the last 18 months, NASA's Jet Propulsion Laboratory (JPL) has implemented a Volcano Sensor Web (VSW) in which data from ground-based and space-based sensors that detect current volcanic activity are used to automatically trigger the NASA Earth Observing 1 (EO-1) spacecraft to make highspatial-resolution observations of these volcanoes.

Three Axes MEMS Combined Sensor for Electronic Stability Control System

NASA Astrophysics Data System (ADS)

Jeong, Heewon; Goto, Yasushi; Aono, Takanori; Nakamura, Toshiaki; Hayashi, Masahide

A microelectromechanical systems (MEMS) combined sensor measuring two-axis accelerations and an angular rate (rotation) has been developed for an electronic stability control system of automobiles. With the recent trend to mount the combined sensors in the engine compartment, the operation temperature range increased drastically, with the request of immunity to environmental disturbances such as vibration. In this paper, we report the combined sensor which has a gyroscopic part and two acceleration parts in single die. A deformation-robust MEMS structure has been adopted to achieve stable operation under wide temperature range (-40 to 125°C) in the engine compartment. A package as small as 10 × 19 × 4 mm is achieved by adopting TSV (through silicon via) and WLP (wafer-level package) technologies with enough performance as automotive grade.

Wafer level reliability for high-performance VLSI design

NASA Technical Reports Server (NTRS)

Root, Bryan J.; Seefeldt, James D.

1987-01-01

As very large scale integration architecture requires higher package density, reliability of these devices has approached a critical level. Previous processing techniques allowed a large window for varying reliability. However, as scaling and higher current densities push reliability to its limit, tighter control and instant feedback becomes critical. Several test structures developed to monitor reliability at the wafer level are described. For example, a test structure was developed to monitor metal integrity in seconds as opposed to weeks or months for conventional testing. Another structure monitors mobile ion contamination at critical steps in the process. Thus the reliability jeopardy can be assessed during fabrication preventing defective devices from ever being placed in the field. Most importantly, the reliability can be assessed on each wafer as opposed to an occasional sample.

Functionalized active-nucleus complex sensor

DOEpatents

Pines, Alexander; Wemmer, David E.; Spence, Megan; Rubin, Seth

2003-11-25

A functionalized active-nucleus complex sensor that selectively associates with one or more target species, and a method for assaying and screening for one or a plurality of target species utilizing one or a plurality of functionalized active-nucleus complexes with at least two of the functionalized active-nucleus complexes having an attraction affinity to different corresponding target species. The functionalized active-nucleus complex has an active-nucleus and a targeting carrier. The method involves functionalizing an active-nucleus, for each functionalized active-nucleus complex, by incorporating the active-nucleus into a macromolucular or molecular complex that is capable of binding one of the target species and then bringing the macromolecular or molecular complexes into contact with the target species and detecting the occurrence of or change in a nuclear magnetic resonance signal from each of the active-nuclei in each of the functionalized active-nucleus complexes.

SVM-based multi-sensor fusion for free-living physical activity assessment.

PubMed

Liu, Shaopeng; Gao, Robert X; John, Dinesh; Staudenmayer, John; Freedson, Patty S

2011-01-01

This paper presents a sensor fusion method for assessing physical activity (PA) of human subjects, based on the support vector machines (SVMs). Specifically, acceleration and ventilation measured by a wearable multi-sensor device on 50 test subjects performing 13 types of activities of varying intensities are analyzed, from which the activity types and related energy expenditures are derived. The result shows that the method correctly recognized the 13 activity types 84.7% of the time, which is 26% higher than using a hip accelerometer alone. Also, the method predicted the associated energy expenditure with a root mean square error of 0.43 METs, 43% lower than using a hip accelerometer alone. Furthermore, the fusion method was effective in reducing the subject-to-subject variability (standard deviation of recognition accuracies across subjects) in activity recognition, especially when data from the ventilation sensor was added to the fusion model. These results demonstrate that the multi-sensor fusion technique presented is more effective in assessing activities of varying intensities than the traditional accelerometer-alone based methods.

Active polymer materials for optical fiber CO2 sensors

NASA Astrophysics Data System (ADS)

Wysokiński, Karol; Filipowicz, Marta; Stańczyk, Tomasz; Lipiński, Stanisław; Napierała, Marek; Murawski, Michał; Nasiłowski, Tomasz

2017-04-01

CO2 optical fiber sensors based on polymer active materials are presented in this paper. Ethyl cellulose was proven to be a good candidate for a matrix material of the sensor, since it gives porous, thick and very sensitive layers. Low-cost sensors based on polymer optical fibers have been elaborated. Sensors have been examined for their sensitivity to CO2, temperature and humidity. Response time during cyclic exposures to CO2 have been also determined. Special layers exhibiting irreversible change of color during exposure to carbon dioxide have been developed. They have been verified for a possible use in smart food packaging.

All-fiber, long-active-length Fabry-Perot strain sensor.

PubMed

Pevec, Simon; Donlagic, Denis

2011-08-01

This paper presents a high-sensitivity, all-silica, all-fiber Fabry-Perot strain-sensor. The proposed sensor provides a long active length, arbitrary length of Fabry-Perot cavity, and low intrinsic temperature sensitivity. The sensor was micro-machined from purposely-developed sensor-forming fiber that is etched and directly spliced to the lead-in fiber. This manufacturing process has good potential for cost-effective, high-volume production. Its measurement range of over 3000 µε, and strain-resolution better than 1 µε were demonstrated by the application of a commercial, multimode fiber-based signal processor.

Fabrication Characterization of Solar-Cell Silicon Wafers Using a Circular-Rhombus Tool

NASA Astrophysics Data System (ADS)

Pa, Pai-Shan

2010-01-01

A new recycling fabrication method using a custom-built designed circular-rhombus tool for a process combining of micro-electroetching and electrochemical machining for removal of the surface layers from silicon wafers of solar cells is demonstrated. The low yields of epoxy film and Si3N4 thin-film depositions are important factors in semiconductor production. The aim of the proposed recycling fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach for removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. A large diameter cathode of the circular-rhombus tool (with a small gap between the anode and the cathode) corresponds to a high rate of epoxy film removal. A high feed rate of the silicon wafers combined with a high continuous DC electric voltage results in a high removal rate. The high rotational speed of the circular-rhombus tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. A small port radius or large end angle of the rhombus anode provides a large discharge space and good removal effect only a short period of time is required to remove the Si3N4 layer and epoxy film easily and cleanly.

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Hieu T.; Jensen, Mallory A.; Li, Li

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active sub-grain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) have distinctly different spatial distributions, and are asymmetric across the sub-grain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially-resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm thatmore » high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the sub-grain boundaries is due to their inclination below the wafer surface. Based on the luminescence asymmetries, the sub-grain boundaries are shown to share a common inclination locally, rather than be orientated randomly.« less

Correlation of 150-mm silicon wafer site flatness with stepper performance for deep submicron applications

NASA Astrophysics Data System (ADS)

Huff, Howard R.; Vigil, Joseph C.; Kuyel, Birol; Chan, David Y.; Nguyen, Long P.

1992-06-01

An experimental study was conducted to correlate wafer site flatness SFQD with stepper performance for half-micron lines and spaces. CD measurements were taken on wafers patterned on both GCA pre-production XLS i-line and SVGL Micrascan-90 DUV steppers as well as focus measurements on the Micrascan-90. Wafer site flatness SFQD less than 0.3 micrometers was observed to be a sufficiently small variable in CD non-uniformities for these initial half-micron stepper applications.

Microfluidic electrochemical sensor for on-line monitoring of aerosol oxidative activity.

PubMed

Sameenoi, Yupaporn; Koehler, Kirsten; Shapiro, Jeff; Boonsong, Kanokporn; Sun, Yele; Collett, Jeffrey; Volckens, John; Henry, Charles S

2012-06-27

Particulate matter (PM) air pollution has a significant impact on human morbidity and mortality; however, the mechanisms of PM-induced toxicity are poorly defined. A leading hypothesis states that airborne PM induces harm by generating reactive oxygen species in and around human tissues, leading to oxidative stress. We report here a system employing a microfluidic electrochemical sensor coupled directly to a particle-into-liquid sampler (PILS) system to measure aerosol oxidative activity in an on-line format. The oxidative activity measurement is based on the dithiothreitol (DTT) assay, where, after being oxidized by PM, the remaining reduced DTT is analyzed by the microfluidic sensor. The sensor consists of an array of working, reference, and auxiliary electrodes fabricated in a poly(dimethylsiloxane)-based microfluidic device. Cobalt(II) phthalocyanine-modified carbon paste was used as the working electrode material, allowing selective detection of reduced DTT. The electrochemical sensor was validated off-line against the traditional DTT assay using filter samples taken from urban environments and biomass burning events. After off-line characterization, the sensor was coupled to a PILS to enable on-line sampling/analysis of aerosol oxidative activity. Urban dust and industrial incinerator ash samples were aerosolized in an aerosol chamber and analyzed for their oxidative activity. The on-line sensor reported DTT consumption rates (oxidative activity) in good correlation with aerosol concentration (R(2) from 0.86 to 0.97) with a time resolution of approximately 3 min.

Peptide-based Fluorescent Sensors of Protein Kinase Activity: Design and Applications

PubMed Central

Sharma, Vyas; Wang, Qunzhao; Lawrence, David S.

2009-01-01

Protein kinases control the flow of information through cell-signaling pathways. A detailed analysis of their behavior enhances our ability to understand normal cellular states and to devise therapeutic interventions for diseases. The design and application of “Environmentally-Sensitive”, “Deep-Quench” and “Self-Reporting” sensor systems for studying protein kinase activity are described. These sensors allow real-time activity measurements in a continuous manner for a wide variety of kinases. As these sensors can be adapted from an in vitro screen to imaging kinase activity in living cells, they support both preliminary and later stages of drug discovery. PMID:17881302

CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

1996-01-01

The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

Local interstitial delivery of z-butylidenephthalide by polymer wafers against malignant human gliomas

PubMed Central

Harn, Horng-Jyh; Lin, Shinn-Zong; Lin, Po-Cheng; Liu, Cyong-Yue; Liu, Po-Yen; Chang, Li-Fu; Yen, Ssu-Yin; Hsieh, Dean-Kuo; Liu, Fu-Chen; Tai, Dar-Fu; Chiou, Tzyy-Wen

2011-01-01

We have shown that the natural compound z-butylidenephthalide (Bdph), isolated from the chloroform extract of Angelica sinensis, has antitumor effects. Because of the limitation of the blood-brain barrier, the Bdph dosage required for treatment of glioma is relatively high. To solve this problem, we developed a local-release system with Bdph incorporated into a biodegradable polyanhydride material, p(CPP-SA; Bdph-Wafer), and investigated its antitumor effects. On the basis of in vitro release kinetics, we demonstrated that the Bdph-Wafer released 50% of the available Bdph by the sixth day, and the release reached a plateau phase (90% of Bdph) by the 30th day. To investigate the in situ antitumor effects of the Bdph-Wafer on glioblastoma multiforme (GBM), we used 2 xenograft animal models—F344 rats (for rat GBM) and nude mice (for human GBM)—which were injected with RG2 and DBTRG-05MG cells, respectively, for tumor formation and subsequently treated subcutaneously with Bdph-Wafers. We observed a significant inhibitory effect on tumor growth, with no significant adverse effects on the rodents. Moreover, we demonstrated that the antitumor effect of Bdph on RG2 cells was via the PKC pathway, which upregulated Nurr77 and promoted its translocation from the nucleus to the cytoplasm. Finally, to study the effect of the interstitial administration of Bdph in cranial brain tumor, Bdph-Wafers were surgically placed in FGF-SV40 transgenic mice. Our Bdph-Wafer significantly reduced tumor size in a dose-dependent manner. In summary, our study showed that p(CPP-SA) containing Bdph delivered a sufficient concentration of Bdph to the tumor site and effectively inhibited the tumor growth in the glioma. PMID:21565841

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

NASA Astrophysics Data System (ADS)

Zibold, Axel M.; Schmid, Rainer M.; Stegemann, B.; Scheruebl, Thomas; Harnisch, Wolfgang; Kobiyama, Yuji

2004-08-01

The Aerial Image Measurement System (AIMS)* for 193 nm lithography emulation has been brought into operation successfully worldwide. A second generation system comprising 193 nm AIMS capability, mini-environment and SMIF, the AIMS fab 193 plus is currently introduced into the market. By adjustment of numerical aperture (NA), illumination type and partial illumination coherence to match the conditions in 193 nm steppers or scanners, it can emulate the exposure tool for any type of reticles like binary, OPC and PSM down to the 65 nm node. The system allows a rapid prediction of wafer printability of defects or defect repairs, and critical features, like dense patterns or contacts on the masks without the need to perform expensive image qualification consisting of test wafer exposures followed by SEM measurements. Therefore, AIMS is a mask quality verification standard for high-end photo masks and established in mask shops worldwide. The progress on the AIMS technology described in this paper will highlight that besides mask shops there will be a very beneficial use of the AIMS in the wafer fab and we propose an Automated Reticle Defect Disposition (ARDD) process. With smaller nodes, where design rules are 65 nm or less, it is expected that smaller defects on reticles will occur in increasing numbers in the wafer fab. These smaller mask defects will matter more and more and become a serious yield limiting factor. With increasing mask prices and increasing number of defects and severability on reticles it will become cost beneficial to perform defect disposition on the reticles in wafer production. Currently ongoing studies demonstrate AIMS benefits for wafer fab applications. An outlook will be given for extension of 193 nm aerial imaging down to the 45 nm node based on emulation of immersion scanners.

Semiconductor sensors

NASA Technical Reports Server (NTRS)

Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

1977-01-01

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

UHF wearable battery free sensor module for activity and falling detection.

PubMed

Nam Trung Dang; Thang Viet Tran; Wan-Young Chung

2016-08-01

Falling is one of the most serious medical and social problems in aging population. Therefore taking care of the elderly by detecting activity and falling for preventing and mitigating the injuries caused by falls needs to be concerned. This study proposes a wearable, wireless, battery free ultra-high frequency (UHF) smart sensor tag module for falling and activity detection. The proposed tag is powered by UHF RF wave from reader and read by a standard UHF Electronic Product Code (EPC) Class-1 Generation-2 reader. The battery free sensor module could improve the wearability of the wireless device. The combination of accelerometer signal and received signal strength indication (RSSI) from a reader in the passive smart sensor tag detect the activity and falling of the elderly very successfully. The fabricated smart sensor tag module has an operating range of up to 2.5m and conducting in real-time activity and falling detection.

Sensor-Based Human Activity Recognition in a Multi-user Scenario

NASA Astrophysics Data System (ADS)

Wang, Liang; Gu, Tao; Tao, Xianping; Lu, Jian

Existing work on sensor-based activity recognition focuses mainly on single-user activities. However, in real life, activities are often performed by multiple users involving interactions between them. In this paper, we propose Coupled Hidden Markov Models (CHMMs) to recognize multi-user activities from sensor readings in a smart home environment. We develop a multimodal sensing platform and present a theoretical framework to recognize both single-user and multi-user activities. We conduct our trace collection done in a smart home, and evaluate our framework through experimental studies. Our experimental result shows that we achieve an average accuracy of 85.46% with CHMMs.

Evaluation of the Technical Feasibility and Effective Cost of Various Wafer Thicknesses for the Manufacture of Solar Cells

NASA Technical Reports Server (NTRS)

1979-01-01

Fourteen wafering characterization runs were completed on a wire saw. Wafer thickness/taper uniformity was excellent. Several alternations and design adjustments were made, facilitating saw operation. A wafering characterization cycle was initiated, and is close to completion. A cell characterization cycle was initiated.

Evaluation of the technical feasibility and effective cost of various wafer thicknesses for the manufacture of solar cells

NASA Technical Reports Server (NTRS)

1978-01-01

Three wafering demonstration runs were completed on the Yasunaga wire saw. Wafer thickness/taper uniformity is excellent. Many small problems were encountered with Yasunaga accessories, slowing the effort. A wafer characterization cycle was defined and will be initiated during the next period.

Terahertz transmission properties of silicon wafers using continuous-wave terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Chihoon; Ahn, Jae Sung; Ji, Taeksoo; Eom, Joo Beom

2017-04-01

We present the spectral properties of Si wafers using continuous-wave terahertz (CW-THz) spectroscopy. By using a tunable laser source and a fixed distributed-feedback laser diode (DFB-LD), a stably tunable beat source for CW-THz spectroscopy system can be implemented. THz radiation is generated in the frequency range of 100 GHz-800 GHz by photomixing in a photoconductive antenna. We also measured CW-THz waveforms by changing the beat frequency and confirmed repeatability through repeated measurement. We calculated the peaks of the THz frequency by taking fast Fourier transforms (FFTs) of measured THz waveforms. The feasibility of CW-THz spectroscopy is demonstrated by the THz spectra of Si wafers with different resistivities, mobilities, and carrier concentrations. The results show that Si wafers with a lower resistivity absorb more THz waves. Thus, we expect our CW-THz system to have the advantage of being able to perform fast non-destructive analysis.

Texturization of diamond-wire-sawn multicrystalline silicon wafer using Cu, Ag, or Ag/Cu as a metal catalyst

NASA Astrophysics Data System (ADS)

Wang, Shing-Dar; Chen, Ting-Wei

2018-06-01

In this work, Cu, Ag, or Ag/Cu was used as a metal catalyst to study the surface texturization of diamond-wire-sawn (DWS) multi-crystalline silicon (mc-Si) wafer by a metal-assisted chemical etching (MACE) method. The DWS wafer was first etched by standard HF-HNO3 acidic etching, and it was labeled as AE-DWS wafer. The effects of ratios of Cu(NO3)2:HF, AgNO3:HF, and AgNO3:Cu(NO3)2 on the morphology of AE-DWS wafer were investigated. After the process of MACE, the wafer was treated with a NaF/H2O2 solution. In this process, H2O2 etched the nanostructure, and NaF removed the oxidation layer. The Si {1 1 1} plane was revealed by etching the wafer in a mixture of 0.03 M Cu(NO3)2 and 1 M HF at 55 °C for 2.5 min. These parallel Si {1 1 1} planes replaced some parallel saw marks on the surface of AE-DWS wafers without forming a positive pyramid or an inverted pyramid structure. The main topography of the wafer is comprised of silicon nanowires grown in <1 0 0> direction when Ag or Ag/Cu was used as a metal catalyst. When silicon is etched in a mixed solution of Cu(NO3)2, AgNO3, HF and H2O2 at 55 °C with a concentration ratio of [Cu2+]/[Ag+] of 50 or at 65 °C with a concentration ratio of [Cu2+]/[Ag+] of 33, a quasi-inverted pyramid structure can be obtained. The reflectivity of the AE-DWS wafers treated with MACE is lower than that of the multiwire-slurry-sawn (MWSS) mc-Si wafers treated with traditional HF + HNO3 etching.

Application of activity sensors for estimating behavioral patterns

USGS Publications Warehouse

Roberts, Caleb P.; Cain, James W.; Cox, Robert D.

2016-01-01

The increasing use of Global Positioning System (GPS) collars in habitat selection studies provides large numbers of precise location data points with reduced field effort. However, inclusion of activity sensors in many GPS collars also grants the potential to remotely estimate behavioral state. Thus, only using GPS collars to collect location data belies their full capabilities. Coupling behavioral state with location data would allow researchers and managers to refine habitat selection models by using diel behavioral state changes to partition fine-scale temporal shifts in habitat selection. We tested the capability of relatively unsophisticated GPS-collar activity sensors to estimate behavior throughout diel periods using free-ranging female elk (Cervus canadensis) in the Jemez Mountains of north-central New Mexico, USA, 2013–2014. Collars recorded cumulative number of movements (hits) per 15-min recording period immediately preceding GPS fixes at 0000, 0600, 1200, and 1800 hr. We measured diel behavioral patterns of focal elk, categorizing active (i.e., foraging, traveling, vigilant, grooming) and inactive (i.e., resting) states. Active behaviors (foraging, traveling) produced more average hits (0.87 ± 0.69 hits/min, 4.0 ± 2.2 hits/min, respectively; 95% CI) and inactive (resting) behavior fewer hits (−1.1 ± 0.61 95% CI). We differentiated active and inactive behavioral states with a bootstrapped threshold of 5.9 ± 3.9 hits/15-min recording period. Mean cumulative activity-sensor hits corresponded with observed diel behavioral patterns: hits increased during crepuscular (0600, 1800 hr) observations when elk were most active (0000–0600 hr: d = 0.19; 1200–1800 hr: d = 0.64) and decreased during midday and night (0000 hr, 1200 hr) when elk were least active (1800–0000 hr: d = −0.39; 0600–1200 hr: d = −0.43). Even using relatively unsophisticated GPS-collar activity sensors, managers can

Non-Reciprocal on Wafer Microwave Devices

DTIC Science & Technology

2015-05-27

filter uses a barium hexagonal ferrite film incorporated into the dielectric layer of a microstrip transmission line. The zero-field operational...Fal,, Robert E. Camley. Millimeter wave phase shifter based on ferromagnetic resonancein a hexagonal barium ferrite thin film, Applied Physics...materials for on-wafer microwave devices concentrated on barium hexagonal ferrite (BaM) films grown on Si because these material is a good candidate

Modeling and testing of fast response, fiber-optic temperature sensors

NASA Astrophysics Data System (ADS)

Tonks, Michael James

The objective of this work was to design, analyze and test a fast response fiber-optic temperature probe and sensor. The sensor is intended for measuring rapid temperature changes such as produced by a blast wave formed by a detonation. This work was performed in coordination with Luna Innovations Incorporated, and the design is based on extensions of an existing fiber-optic temperature sensor developed by Luna. The sensor consists of a glass fiber with an optical wafer attached to the tip. A basic description of the principles behind the fiber-optic temperature sensor and an accompanying demodulation system is provided. For experimental validation tests, shock tubes were used to simulate the blast wave experienced at a distance of 3.0 m from the detonation of 22.7 kg of TNT. The flow conditions were predicted using idealized shock tube theory. The temperature sensors were tested in three configurations, flush at the end of the shock tube, extended on a probe 2.54 cm into the flow and extended on a probe 12.7 cm into the flow. The total temperature was expected to change from 300 K to 1130 K for the flush wall experiments and from 300 K to 960 K for the probe experiments. During the initial 0.1 milliseconds of the data the temperature only changed 8 K when the sensors were flush in the end of the shock tube. The sensor temperature changed 36 K during the same time when mounted on a probe in the flow. Schlieren pictures were taken of the flow in the shock tube to further understand the shock tube environment. Contrary to ideal shock tube theory, it was discovered that the flow did not remain stagnant in the end of the shock tube after the shock reflects from the end of the shock tube. Instead, the effects of turbulence were recorded with the fiber-optic sensors, and this turbulence was also captured in the schlieren photographs. A fast-response thermocouple was used to collect data for comparison with the fiber-optic sensor, and the fiber-optic sensor was proven to

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

Fabricatable nanopore sensors with an atomic thickness

NASA Astrophysics Data System (ADS)

Luan, Binquan; Bai, Jingwei; Stolovitzky, Gustavo

2013-10-01

When analyzing biological molecules (such as DNA and proteins) transported through a nanopore sensor, the pore length limits both the sensitivity and the spatial resolution. Atomically thin as a graphene nanopore is, it is difficult to make graphene pores and the scalable-fabrication of those pores has not yet been possible. We theoretically studied a type of atomically thin nanopores that are formed by intersection of two perpendicular nano-slits. Based on theoretical analyses, we demonstrate that slit nanopores behave similarly to graphene pores and can be manufactured at a wafer scale.

Photon small-field measurements with a CMOS active pixel sensor.

PubMed

Spang, F Jiménez; Rosenberg, I; Hedin, E; Royle, G

2015-06-07

In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm(2). The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

Advancing from offline to online activity recognition with wearable sensors.

PubMed

Ermes, Miikka; Parkka, Juha; Cluitmans, Luc

2008-01-01

Activity recognition with wearable sensors could motivate people to perform a variety of different sports and other physical exercises. We have earlier developed algorithms for offline analysis of activity data collected with wearable sensors. In this paper, we present our current progress in advancing the platform for the existing algorithms to an online version, onto a PDA. Acceleration data are obtained from wireless motion bands which send the 3D raw acceleration signals via a Bluetooth link to the PDA which then performs the data collection, feature extraction and activity classification. As a proof-of-concept, the online activity system was tested with three subjects. All of them performed at least 5 minutes of each of the following activities: lying, sitting, standing, walking, running and cycling with an exercise bike. The average second-by-second classification accuracies for the subjects were 99%, 97%, and 82 %. These results suggest that earlier developed offline analysis methods for the acceleration data obtained from wearable sensors can be successfully implemented in an online activity recognition application.

ESAM: Endocrine inspired Sensor Activation Mechanism for multi-target tracking in WSNs

NASA Astrophysics Data System (ADS)

Adil Mahdi, Omar; Wahab, Ainuddin Wahid Abdul; Idris, Mohd Yamani Idna; Znaid, Ammar Abu; Khan, Suleman; Al-Mayouf, Yusor Rafid Bahar

2016-10-01

Target tracking is a significant application of wireless sensor networks (WSNs) in which deployment of self-organizing and energy efficient algorithms is required. The tracking accuracy increases as more sensor nodes are activated around the target but more energy is consumed. Thus, in this study, we focus on limiting the number of sensors by forming an ad-hoc network that operates autonomously. This will reduce the energy consumption and prolong the sensor network lifetime. In this paper, we propose a fully distributed algorithm, an Endocrine inspired Sensor Activation Mechanism for multi target-tracking (ESAM) which reflecting the properties of real life sensor activation system based on the information circulating principle in the endocrine system of the human body. Sensor nodes in our network are secreting different hormones according to certain rules. The hormone level enables the nodes to regulate an efficient sleep and wake up cycle of nodes to reduce the energy consumption. It is evident from the simulation results that the proposed ESAM in autonomous sensor network exhibits a stable performance without the need of commands from a central controller. Moreover, the proposed ESAM generates more efficient and persistent results as compared to other algorithms for tracking an invading object.

Human movement activity classification approaches that use wearable sensors and mobile devices

NASA Astrophysics Data System (ADS)

Kaghyan, Sahak; Sarukhanyan, Hakob; Akopian, David

2013-03-01

Cell phones and other mobile devices become part of human culture and change activity and lifestyle patterns. Mobile phone technology continuously evolves and incorporates more and more sensors for enabling advanced applications. Latest generations of smart phones incorporate GPS and WLAN location finding modules, vision cameras, microphones, accelerometers, temperature sensors etc. The availability of these sensors in mass-market communication devices creates exciting new opportunities for data mining applications. Particularly healthcare applications exploiting build-in sensors are very promising. This paper reviews different approaches of human activity recognition.

Kerfless epitaxial silicon wafers with 7 ms carrier lifetimes and a wide lift-off process window

NASA Astrophysics Data System (ADS)

Gemmel, Catherin; Hensen, Jan; David, Lasse; Kajari-Schröder, Sarah; Brendel, Rolf

2018-04-01

Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing window appears to be a challenge for this process. This holds in particularly for the etching current density of the separation layer that leads to lift-off failures if it is too large or too low. Here we present kerfless PSI wafers of high electronic quality that we fabricate on weakly reorganized porous Si with etch current densities varying in a wide process window from 110 to 150 mA/cm2. We are able to detach all 17 out of 17 epitaxial wafers. All wafers exhibit charge carrier lifetimes in the range of 1.9 to 4.3 ms at an injection level of 1015 cm-3 without additional high-temperature treatment. We find even higher lifetimes in the range of 4.6 to 7.0 ms after applying phosphorous gettering. These results indicate that a weak reorganization of the porous layer can be beneficial for a large lift-off process window while still allowing for high carrier lifetimes.

Low-Cost Sensor System Design for In-Home Physical Activity Tracking.

PubMed

Nambiar, Siddhartha; Nikolaev, Alexander; Greene, Melissa; Cavuoto, Lora; Bisantz, Ann

2016-01-01

An aging and more sedentary population requires interventions aimed at monitoring physical activity, particularly within the home. This research uses simulation, optimization, and regression analyses to assess the feasibility of using a small number of sensors to track movement and infer physical activity levels of older adults. Based on activity data from the American Time Use Survey and assisted living apartment layouts, we determined that using three to four doorway sensors can be used to effectively capture a sufficient amount of movements in order to estimate activity. The research also identified preferred approaches for assigning sensor locations, evaluated the error magnitude inherent in the approach, and developed a methodology to identify which apartment layouts would be best suited for these technologies.

Low-Cost Sensor System Design for In-Home Physical Activity Tracking

PubMed Central

Nikolaev, Alexander; Greene, Melissa; Cavuoto, Lora; Bisantz, Ann

2016-01-01

An aging and more sedentary population requires interventions aimed at monitoring physical activity, particularly within the home. This research uses simulation, optimization, and regression analyses to assess the feasibility of using a small number of sensors to track movement and infer physical activity levels of older adults. Based on activity data from the American Time Use Survey and assisted living apartment layouts, we determined that using three to four doorway sensors can be used to effectively capture a sufficient amount of movements in order to estimate activity. The research also identified preferred approaches for assigning sensor locations, evaluated the error magnitude inherent in the approach, and developed a methodology to identify which apartment layouts would be best suited for these technologies. PMID:28560118

Vision Sensors and Cameras

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Silicon charge-coupled-device (CCD) imagers have been and are a specialty market ruled by a few companies for decades. Based on CMOS technologies, active-pixel sensors (APS) began to appear in 1990 at the 1 μm technology node. These pixels allow random access, global shutters, and they are compatible with focal-plane imaging systems combining sensing and first-level image processing. The progress towards smaller features and towards ultra-low leakage currents has provided reduced dark currents and μm-size pixels. All chips offer Mega-pixel resolution, and many have very high sensitivities equivalent to ASA 12.800. As a result, HDTV video cameras will become a commodity. Because charge-integration sensors suffer from a limited dynamic range, significant processing effort is spent on multiple exposure and piece-wise analog-digital conversion to reach ranges >10,000:1. The fundamental alternative is log-converting pixels with an eye-like response. This offers a range of almost a million to 1, constant contrast sensitivity and constant colors, important features in professional, technical and medical applications. 3D retino-morphic stacking of sensing and processing on top of each other is being revisited with sub-100 nm CMOS circuits and with TSV technology. With sensor outputs directly on top of neurons, neural focal-plane processing will regain momentum, and new levels of intelligent vision will be achieved. The industry push towards thinned wafers and TSV enables backside-illuminated and other pixels with a 100% fill-factor. 3D vision, which relies on stereo or on time-of-flight, high-speed circuitry, will also benefit from scaled-down CMOS technologies both because of their size as well as their higher speed.

Physical Activities Monitoring Using Wearable Acceleration Sensors Attached to the Body.

PubMed

Arif, Muhammad; Kattan, Ahmed

2015-01-01

Monitoring physical activities by using wireless sensors is helpful for identifying postural orientation and movements in the real-life environment. A simple and robust method based on time domain features to identify the physical activities is proposed in this paper; it uses sensors placed on the subjects' wrist, chest and ankle. A feature set based on time domain characteristics of the acceleration signal recorded by acceleration sensors is proposed for the classification of twelve physical activities. Nine subjects performed twelve different types of physical activities, including sitting, standing, walking, running, cycling, Nordic walking, ascending stairs, descending stairs, vacuum cleaning, ironing clothes and jumping rope, and lying down (resting state). Their ages were 27.2 ± 3.3 years and their body mass index (BMI) is 25.11 ± 2.6 Kg/m2. Classification results demonstrated a high validity showing precision (a positive predictive value) and recall (sensitivity) of more than 95% for all physical activities. The overall classification accuracy for a combined feature set of three sensors is 98%. The proposed framework can be used to monitor the physical activities of a subject that can be very useful for the health professional to assess the physical activity of healthy individuals as well as patients.

The Novel Preparation of P-N Junction Mesa Diodes by Silicon-Wafer Direct Bonding (SDB)

NASA Astrophysics Data System (ADS)

Yeh, Ching-Fa; Hwangleu, Shyang

1992-05-01

The key processes of silicon-wafer direct bonding (SDB), including hydrophilic surface formation and optimal two-step heat treatment, have been developed However, H2SO4/H2O2 solution being a strong oxidized acid solution, native oxide is found to have grown on the wafer surface as soon as a wafer is treated in this solution. In the case of a wafer further treated in diluted HF solution after hydrophilic surface formation, it is shown that the wafer surface can not only be cleaned of its native oxide but also remains hydrophilic, and can provide excellent voidless bonding. The N+/P and N/P combination junction mesa diodes fabricated on the wafers prepared by these novel SDB technologies are examined. The ideality factor n of the N/P mesa diode is 2.4˜2.8 for the voltage range 0.2˜0.3 V; hence, the lowering of the ideality factor n is evidently achieved. As for the N+/P mesa diode, the ideality factor n shows a value of 1.10˜1.30 for the voltage range 0.2˜0.6 V; the low value of n is attributed to an autodoping phenomenon which has caused the junction interface to form in the P-silicon bulk. However, the fact that the sustaining voltage of the N/P mesa diode showed a value greater than 520 V reveals the effectiveness of our novel SDB processes.

Miniature all-silica optical fiber pressure sensor with an ultrathin uniform diaphragm.

PubMed

Wang, Wenhui; Wu, Nan; Tian, Ye; Niezrecki, Christopher; Wang, Xingwei

2010-04-26

This paper presents an all-silica miniature optical fiber pressure/acoustic sensor based on the Fabry-Perot (FP) interferometric principle. The endface of the etched optical fiber tip and silica thin diaphragm on it form the FP structure. The uniform and thin silica diaphragm was fabricated by etching away the silicon substrate from a commercial silicon wafer that has a thermal oxide layer. The thin film was directly thermally bonded to the endface of the optical fiber thus creating the Fabry-Perot cavity. Thin films with a thickness from 1microm to 3microm have been bonded successfully. The sensor shows good linearity and hysteresis during measurement. A sensor with 0.75 microm-thick diaphragm thinned by post silica etching was demonstrated to have a sensitivity of 11 nm/kPa. The new sensor has great potential to be used as a non-intrusive pressure sensor in a variety of sensing applications.

Active Low Intrusion Hybrid Monitor for Wireless Sensor Networks

PubMed Central

Navia, Marlon; Campelo, Jose C.; Bonastre, Alberto; Ors, Rafael; Capella, Juan V.; Serrano, Juan J.

2015-01-01

Several systems have been proposed to monitor wireless sensor networks (WSN). These systems may be active (causing a high degree of intrusion) or passive (low observability inside the nodes). This paper presents the implementation of an active hybrid (hardware and software) monitor with low intrusion. It is based on the addition to the sensor node of a monitor node (hardware part) which, through a standard interface, is able to receive the monitoring information sent by a piece of software executed in the sensor node. The intrusion on time, code, and energy caused in the sensor nodes by the monitor is evaluated as a function of data size and the interface used. Then different interfaces, commonly available in sensor nodes, are evaluated: serial transmission (USART), serial peripheral interface (SPI), and parallel. The proposed hybrid monitor provides highly detailed information, barely disturbed by the measurement tool (interference), about the behavior of the WSN that may be used to evaluate many properties such as performance, dependability, security, etc. Monitor nodes are self-powered and may be removed after the monitoring campaign to be reused in other campaigns and/or WSNs. No other hardware-independent monitoring platforms with such low interference have been found in the literature. PMID:26393604

Fusion of smartphone motion sensors for physical activity recognition.

PubMed

Shoaib, Muhammad; Bosch, Stephan; Incel, Ozlem Durmaz; Scholten, Hans; Havinga, Paul J M

2014-06-10

For physical activity recognition, smartphone sensors, such as an accelerometer and a gyroscope, are being utilized in many research studies. So far, particularly, the accelerometer has been extensively studied. In a few recent studies, a combination of a gyroscope, a magnetometer (in a supporting role) and an accelerometer (in a lead role) has been used with the aim to improve the recognition performance. How and when are various motion sensors, which are available on a smartphone, best used for better recognition performance, either individually or in combination? This is yet to be explored. In order to investigate this question, in this paper, we explore how these various motion sensors behave in different situations in the activity recognition process. For this purpose, we designed a data collection experiment where ten participants performed seven different activities carrying smart phones at different positions. Based on the analysis of this data set, we show that these sensors, except the magnetometer, are each capable of taking the lead roles individually, depending on the type of activity being recognized, the body position, the used data features and the classification method employed (personalized or generalized). We also show that their combination only improves the overall recognition performance when their individual performances are not very high, so that there is room for performance improvement. We have made our data set and our data collection application publicly available, thereby making our experiments reproducible.

SEMICONDUCTOR TECHNOLOGY: Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

NASA Astrophysics Data System (ADS)

Jianxiu, Su; Xiqu, Chen; Jiaxi, Du; Renke, Kang

2010-05-01

Distribution forms of abrasives in the chemical mechanical polishing (CMP) process are analyzed based on experimental results. Then the relationships between the wafer, the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics. According to the track length of abrasives on the wafer surface, the relationships between the material removal rate and the polishing velocity are obtained. The analysis results are in accord with the experimental results. The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.

Silicon Hybrid Wafer Scale Integration Interconnect Evaluation

DTIC Science & Technology

1989-12-01

perform Wafer Scale Integration on a routine basis is being vigorously pursued by a number of interests in military, academic , and commercial sectors...A iliciosi rip1 St -110 illic. (;11ptai / W. -a ;,tcd Ihat Ilesc hybhrid futl liods separiltely soI lie llixiiiul’upw~v~ ielts andl ~il (otii’ie thli

External self-gettering of nickel in float zone silicon wafers

NASA Astrophysics Data System (ADS)

Gay, N.; Martinuzzi, S.

1997-05-01

During indiffusion of Ni atoms in silicon crystals at 950 °C from a nickel layer source, Ni-Si alloys can be formed close to the surface. Metal solubility in these alloys is higher than in silicon, which induces a marked segregation gettering of the Ni atoms which have diffused in the bulk of the wafers. Consequently, the regions of the wafers covered with the Ni layer are less contaminated than adjacent regions in which Ni atoms have also penetrated, as shown by the absence of precipitates and the higher diffusion length of minority carriers. The results suggest the existence of external self-gettering of Ni atoms by the nickel source.

A novel patterning control strategy based on real-time fingerprint recognition and adaptive wafer level scanner optimization

NASA Astrophysics Data System (ADS)

Cekli, Hakki Ergun; Nije, Jelle; Ypma, Alexander; Bastani, Vahid; Sonntag, Dag; Niesing, Henk; Zhang, Linmiao; Ullah, Zakir; Subramony, Venky; Somasundaram, Ravin; Susanto, William; Matsunobu, Masazumi; Johnson, Jeff; Tabery, Cyrus; Lin, Chenxi; Zou, Yi

2018-03-01

In addition to lithography process and equipment induced variations, processes like etching, annealing, film deposition and planarization exhibit variations, each having their own intrinsic characteristics and leaving an effect, a `fingerprint', on the wafers. With ever tighter requirements for CD and overlay, controlling these process induced variations is both increasingly important and increasingly challenging in advanced integrated circuit (IC) manufacturing. For example, the on-product overlay (OPO) requirement for future nodes is approaching <3nm, requiring the allowable budget for process induced variance to become extremely small. Process variance control is seen as an bottleneck to further shrink which drives the need for more sophisticated process control strategies. In this context we developed a novel `computational process control strategy' which provides the capability of proactive control of each individual wafer with aim to maximize the yield, without introducing a significant impact on metrology requirements, cycle time or productivity. The complexity of the wafer process is approached by characterizing the full wafer stack building a fingerprint library containing key patterning performance parameters like Overlay, Focus, etc. Historical wafer metrology is decomposed into dominant fingerprints using Principal Component Analysis. By associating observed fingerprints with their origin e.g. process steps, tools and variables, we can give an inline assessment of the strength and origin of the fingerprints on every wafer. Once the fingerprint library is established, a wafer specific fingerprint correction recipes can be determined based on its processing history. Data science techniques are used in real-time to ensure that the library is adaptive. To realize this concept, ASML TWINSCAN scanners play a vital role with their on-board full wafer detection and exposure correction capabilities. High density metrology data is created by the scanner for each

Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity

NASA Astrophysics Data System (ADS)

Engst, C. R.; Rommel, M.; Bscheid, C.; Eisele, I.; Kutter, C.

2017-12-01

Minority carrier lifetime (lifetime) measurements are performed on corona-charged silicon wafers by means of Microwave Detected Photoconductivity (MDP). The corona charge is deposited on the front and back sides of oxidized wafers in order to adjust accumulation conditions. Once accumulation is established, interface recombination is suppressed and bulk lifetimes are obtained. Neither contacts nor non-CMOS compatible preparation techniques are required in order to achieve accumulation conditions, which makes the method ideally suited for inline characterization. The novel approach, termed ChargedMDP (CMDP), is used to investigate neutron transmutation doped (NTD) float zone silicon with resistivities ranging from 6.0 to 8.2 kΩ cm. The bulk properties of 150 mm NTD wafers are analyzed in detail by performing measurements of the carrier lifetime and the steady-state photoconductivity at various injection levels. The results are compared with MDP measurements of uncharged wafers as well as to the established charged microwave detected Photoconductance Decay (charge-PCD) method. Besides analyzing whole wafers, CMDP measurements are performed on oxide test-structures on a patterned wafer. Finally, the oxide properties are characterized by means of charge-PCD as well as capacitance-voltage measurements. With CMDP, average bulk lifetimes up to 33.1 ms are measured, whereby significant variations are observed among wafers, which are produced out of the same ingot but oxidized in different furnaces. The observed lifetime variations are assumed to be caused by contaminations, which are introduced during the oxidation process. The results obtained by CMDP were neither accessible by means of conventional MDP measurements of uncharged wafers nor with the established charge-PCD method.

Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

NASA Astrophysics Data System (ADS)

Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

2002-02-01

We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

A novel integrated multifunction micro-sensor for three-dimensional micro-force measurements.

PubMed

Wang, Weizhong; Zhao, Yulong; Qin, Yafei

2012-01-01

An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10(-3) KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

Degradation of bare and silanized silicon wafer surfaces by constituents of biological fluids.

PubMed

Dekeyser, C M; Buron, C C; Derclaye, S R; Jonas, A M; Marchand-Brynaert, J; Rouxhet, P G

2012-07-15

The 24 h stability of bare silicon wafers as such or silanized with CH(3)O-(CH(2)-CH(2)-O)(n)-C(3)H(6)-trichlorosilane (n=6-9) was investigated in water, NaCl, phosphate and carbonate solutions, and in phosphate buffered saline (PBS) at 37 °C (close to biological conditions regarding temperature, high ionic strength, and pH). The resulting surfaces were analyzed using ellipsometry, X-ray Reflectometry (XRR), X-ray Photoelectron Spectroscopy (XPS), and Atomic Force Microscopy (AFM). Incubation of the silanized wafers in phosphate solution and PBS provokes a detachment of the silane layer. This is due to a hydrolysis of Si-O bonds which is favored by the action of phosphate, also responsible for a corrosion of non-silanized wafers. The surface alteration (detachment of silane layer and corrosion of the non-silanized wafer) is also important with carbonate solution, due to a higher pH (8.3). The protection of the silicon oxide layer brought by silane against the action of the salts is noticeable for phosphate but not for carbonate. Copyright © 2012 Elsevier Inc. All rights reserved.

Preparation of wafer-level glass cavities by a low-cost chemical foaming process (CFP).

PubMed

Shang, Jintang; Chen, Boyin; Lin, Wei; Wong, Ching-Ping; Zhang, Di; Xu, Chao; Liu, Junwen; Huang, Qing-An

2011-04-21

A novel foaming process-chemical foaming process (CFP)-using foaming agents to fabricate wafer-level micro glass cavities including channels and bubbles was investigated. The process consists of the following steps sequentially: (1) shallow cavities were fabricated by a wet etching on a silicon wafer; (2) powders of a proper foaming agent were placed in a silicon cavity, named 'mother cavity', on the etched silicon surface; (3) the silicon cavities were sealed with a glass wafer by anodic bonding; (4) the bonded wafers were heated to above the softening point of the glass, and baked for several minutes, when the gas released by the decomposition of the foaming agent in the 'mother cavity' went into the other sealed interconnected silicon cavities to foam the softened glass into cylindrical channels named 'daughter channels', or spherical bubbles named 'son bubbles'. Results showed that wafer-level micro glass cavities with smooth wall surfaces were achieved successfully without contamination by the CFP. A model for the CFP was proposed to predict the final shape of the glass cavity. Experimental results corresponded with model predictions. The CFP provides a low-cost avenue to preparation of micro glass cavities of high quality for applications such as micro-reactors, micro total analysis systems (μTAS), analytical and bio-analytical applications, and MEMS packaging.

Physical Human Activity Recognition Using Wearable Sensors.

PubMed

Attal, Ferhat; Mohammed, Samer; Dedabrishvili, Mariam; Chamroukhi, Faicel; Oukhellou, Latifa; Amirat, Yacine

2015-12-11

This paper presents a review of different classification techniques used to recognize human activities from wearable inertial sensor data. Three inertial sensor units were used in this study and were worn by healthy subjects at key points of upper/lower body limbs (chest, right thigh and left ankle). Three main steps describe the activity recognition process: sensors' placement, data pre-processing and data classification. Four supervised classification techniques namely, k-Nearest Neighbor (k-NN), Support Vector Machines (SVM), Gaussian Mixture Models (GMM), and Random Forest (RF) as well as three unsupervised classification techniques namely, k-Means, Gaussian mixture models (GMM) and Hidden Markov Model (HMM), are compared in terms of correct classification rate, F-measure, recall, precision, and specificity. Raw data and extracted features are used separately as inputs of each classifier. The feature selection is performed using a wrapper approach based on the RF algorithm. Based on our experiments, the results obtained show that the k-NN classifier provides the best performance compared to other supervised classification algorithms, whereas the HMM classifier is the one that gives the best results among unsupervised classification algorithms. This comparison highlights which approach gives better performance in both supervised and unsupervised contexts. It should be noted that the obtained results are limited to the context of this study, which concerns the classification of the main daily living human activities using three wearable accelerometers placed at the chest, right shank and left ankle of the subject.

2D-Visualization of metabolic activity with planar optical chemical sensors (optodes)

NASA Astrophysics Data System (ADS)

Meier, R. J.; Liebsch, G.

2015-12-01

Microbia plays an outstandingly important role in many hydrologic compartments, such as e.g. the benthic community in sediments, or biologically active microorganisms in the capillary fringe, in ground water, or soil. Oxygen, pH, and CO2 are key factors and indicators for microbial activity. They can be measured using optical chemical sensors. These sensors record changing fluorescence properties of specific indicator dyes. The signals can be measured in a non-contact mode, even through transparent walls, which is important for many lab-experiments. They can measure in closed (transparent) systems, without sampling or intruding into the sample. They do not consume the analytes while measuring, are fully reversible and able to measure in non-stirred solutions. These sensors can be applied as high precision fiberoptic sensors (for profiling), robust sensor spots, or as planar sensors for 2D visualization (imaging). Imaging enables to detect thousands of measurement spots at the same time and generate 2D analyte maps over a region of interest. It allows for comparing different regions within one recorded image, visualizing spatial analyte gradients, or more important to identify hot spots of metabolic activity. We present ready-to-use portable imaging systems for the analytes oxygen, pH, and CO2. They consist of a detector unit, planar sensor foils and a software for easy data recording and evaluation. Sensors foils for various analytes and measurement ranges enable visualizing metabolic activity or analyte changes in the desired range. Dynamics of metabolic activity can be detected in one shot or over long time periods. We demonstrate the potential of this analytical technique by presenting experiments on benthic disturbance-recovery dynamics in sediments and microbial degradation of organic material in the capillary fringe. We think this technique is a new tool to further understand how microbial and geochemical processes are linked in (not solely) hydrologic

Virtual sensors for active noise control in acoustic-structural coupled enclosures using structural sensing: robust virtual sensor design.

PubMed

Halim, Dunant; Cheng, Li; Su, Zhongqing

2011-03-01

The work was aimed to develop a robust virtual sensing design methodology for sensing and active control applications of vibro-acoustic systems. The proposed virtual sensor was designed to estimate a broadband acoustic interior sound pressure using structural sensors, with robustness against certain dynamic uncertainties occurring in an acoustic-structural coupled enclosure. A convex combination of Kalman sub-filters was used during the design, accommodating different sets of perturbed dynamic model of the vibro-acoustic enclosure. A minimax optimization problem was set up to determine an optimal convex combination of Kalman sub-filters, ensuring an optimal worst-case virtual sensing performance. The virtual sensing and active noise control performance was numerically investigated on a rectangular panel-cavity system. It was demonstrated that the proposed virtual sensor could accurately estimate the interior sound pressure, particularly the one dominated by cavity-controlled modes, by using a structural sensor. With such a virtual sensing technique, effective active noise control performance was also obtained even for the worst-case dynamics. © 2011 Acoustical Society of America

Degradation of Gate Oxide Integrity by Formation of Tiny Holes by Metal Contamination of Raw Wafer

NASA Astrophysics Data System (ADS)

Chen, Po-Ying

2008-12-01

Heavy metal atoms (such as Cu) spontaneously undergo a dissolution reaction when they come into contact with silicon. Most investigations in this extensively studied area begin with a clean, bare wafer and focus on metal contamination during the IC manufacturing stage. In this work, the effect of Fe and Cu contamination on raw wafers was elucidated. When two batches of raw wafers are scheduled, one uncontaminated and one with various degrees of contamination ranging from 0.1 to 10 ppb undergo the typical steps of the 90 nm LOGIC complementary metal-oxide-semiconductor (CMOS) semiconductor manufacturing process. The main contribution of this work is the discovery of a previously unidentified cause of gate oxide leakage: the formation of tiny holes by metal contamination during the wafer manufacturing stage. Because tiny holes are formed, a spontaneous reaction can occur even with at very low metal concentration (0.2 ppb), revealing that the wafer manufacturing stage is more vulnerable to metal contamination than the IC manufacturing stage and therefore requires stricter contamination control.

Proceedings of the Low-Cost Solar Array Wafering Workshop

NASA Technical Reports Server (NTRS)

Morrison, A. D.

1982-01-01

The technology and economics of silicon ingot wafering for low cost solar arrays were discussed. Fixed and free abrasive sawing wire, ID, and multiblade sawing, materials, mechanisms, characterization, and innovative concepts were considered.

Method for protecting chip corners in wet chemical etching of wafers

DOEpatents

Hui, Wing C.

1994-01-01

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

Method for protecting chip corners in wet chemical etching of wafers

DOEpatents

Hui, W.C.

1994-02-15

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible. 63 figures.

Comparison of line shortening assessed by aerial image and wafer measurements

NASA Astrophysics Data System (ADS)

Ziegler, Wolfram; Pforr, Rainer; Thiele, Joerg; Maurer, Wilhelm

1997-02-01

Increasing number of patterns per area and decreasing linewidth demand enhancement technologies for optical lithography. OPC, the correction of systematic non-linearity in the pattern transfer process by correction of design data is one possibility to tighten process control and to increase the lifetime of existing lithographic equipment. The two most prominent proximity effects to be corrected by OPC are CD variation and line shortening. Line shortening measured on a wafer is up to 2 times larger than full resist simulation results. Therefore, the influence of mask geometry to line shortening is a key item to parameterize lithography. The following paper discusses the effect of adding small serifs to line ends with 0.25 micrometer ground-rule design. For reticles produced on an ALTA 3000 with standard wet etch process, the corner rounding on them mask can be reduced by adding serifs of a certain size. The corner rounding was measured and the effect on line shortening on the wafer is determined. This was investigated by resist measurements on wafer, aerial image plus resist simulation and aerial image measurements on the AIMS microscope.

Chemical Sensor Platform for Non-Invasive Monitoring of Activity and Dehydration

PubMed Central

Solovei, Dmitry; Žák, Jaromír; Majzlíková, Petra; Sedláček, Jiří; Hubálek, Jaromír

2015-01-01

A non-invasive solution for monitoring of the activity and dehydration of organisms is proposed in the work. For this purpose, a wireless standalone chemical sensor platform using two separate measurement techniques has been developed. The first approach for activity monitoring is based on humidity measurement. Our solution uses new humidity sensor based on a nanostructured TiO2 surface for sweat rate monitoring. The second technique is based on monitoring of potassium concentration in urine. High level of potassium concentration denotes clear occurrence of dehydration. Furthermore, a Wireless Body Area Network (WBAN) was developed for this sensor platform to manage data transfer among devices and the internet. The WBAN coordinator controls the sensor devices and collects and stores the measured data. The collected data is particular to individuals and can be shared with physicians, emergency systems or athletes' coaches. Long-time monitoring of activity and potassium concentration in urine can help maintain the appropriate water intake of elderly people or athletes and to send warning signals in the case of near dehydration. The created sensor system was calibrated and tested in laboratory and real conditions as well. The measurement results are discussed. PMID:25594591

HED-TIE: A wafer-scale approach for fabricating hybrid electronic devices with trench isolated electrodes

NASA Astrophysics Data System (ADS)

Banerjee, Sreetama; Bülz, Daniel; Solonenko, Dmytro; Reuter, Danny; Deibel, Carsten; Hiller, Karla; Zahn, Dietrich R. T.; Salvan, Georgeta

2017-05-01

Organic-inorganic hybrid electronic devices (HEDs) offer opportunities for functionalities that are not easily obtainable with either organic or inorganic materials individually. In the strive for down-scaling the channel length in planar geometry HEDs, the best results were achieved with electron beam lithography or nanoimprint lithography. Their application on the wafer level is, however, cost intensive and time consuming. Here, we propose trench isolated electrode (TIE) technology as a fast, cost effective, wafer-level approach for the fabrication of planar HEDs with electrode gaps in the range of 100 nm. We demonstrate that the formation of the organic channel can be realized by deposition from solution as well as by the thermal evaporation of organic molecules. To underline one key feature of planar HED-TIEs, namely full accessibility of the active area of the devices by external stimuli such as light, 6,13-bis (triisopropylsilylethynyl) (TIPS)-pentacene/Au HED-TIEs are successfully tested for possible application as hybrid photodetectors in the visible spectral range.

A Lightweight Hierarchical Activity Recognition Framework Using Smartphone Sensors

PubMed Central

Han, Manhyung; Bang, Jae Hun; Nugent, Chris; McClean, Sally; Lee, Sungyoung

2014-01-01

Activity recognition for the purposes of recognizing a user's intentions using multimodal sensors is becoming a widely researched topic largely based on the prevalence of the smartphone. Previous studies have reported the difficulty in recognizing life-logs by only using a smartphone due to the challenges with activity modeling and real-time recognition. In addition, recognizing life-logs is difficult due to the absence of an established framework which enables the use of different sources of sensor data. In this paper, we propose a smartphone-based Hierarchical Activity Recognition Framework which extends the Naïve Bayes approach for the processing of activity modeling and real-time activity recognition. The proposed algorithm demonstrates higher accuracy than the Naïve Bayes approach and also enables the recognition of a user's activities within a mobile environment. The proposed algorithm has the ability to classify fifteen activities with an average classification accuracy of 92.96%. PMID:25184486

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1991-01-01

This invention is a method for the controlled growth of single-crystal semiconductor device quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Larkin, David J. (Inventor); Powell, J. Anthony (Inventor)

1992-01-01

A method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles is presented. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

2017-03-01

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Influence of Si wafer thinning processes on (sub)surface defects

NASA Astrophysics Data System (ADS)

Inoue, Fumihiro; Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric; Uedono, Akira

2017-05-01

Wafer-to-wafer three-dimensional (3D) integration with minimal Si thickness can produce interacting multiple devices with significantly scaled vertical interconnections. Realizing such a thin 3D structure, however, depends critically on the surface and subsurface of the remaining backside Si after the thinning processes. The Si (sub)surface after mechanical grinding has already been characterized fruitfully for a range of few dozen of μm. Here, we expand the characterization of Si (sub)surface to 5 μm thickness after thinning process on dielectric bonded wafers. The subsurface defects and damage layer were investigated after grinding, chemical mechanical polishing (CMP), wet etching and plasma dry etching. The (sub)surface defects were characterized using transmission microscopy, atomic force microscopy, and positron annihilation spectroscopy. Although grinding provides the fastest removal rate of Si, the surface roughness was not compatible with subsequent processing. Furthermore, mechanical damage such as dislocations and amorphous Si cannot be reduced regardless of Si thickness and thin wafer handling systems. The CMP after grinding showed excellent performance to remove this grinding damage, even though the removal amount is 1 μm. For the case of Si thinning towards 5 μm using grinding and CMP, the (sub)surface is atomic scale of roughness without vacancy. For the case of grinding + dry etch, vacancy defects were detected in subsurface around 0.5-2 μm. The finished surface after wet etch remains in the nm scale in the strain region. By inserting a CMP step in between grinding and dry etch it is possible to significantly reduce not only the roughness, but also the remaining vacancies at the subsurface. The surface of grinding + CMP + dry etching gives an equivalent mono vacancy result as to that of grinding + CMP. This combination of thinning processes allows development of extremely thin 3D integration devices with minimal roughness and vacancy surface.

Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations

NASA Astrophysics Data System (ADS)

Kubair, D. V.; Spearing, S. M.

2006-03-01

Direct wafer bonding has increasingly become popular in the manufacture of microelectromechanical systems and semiconductor microelectronics components. The success of the bonding process is controlled by variables such as wafer flatness and surface preparation. In order to understand the effects of these variables, spontaneous planar crack propagation simulations were performed using the spectral scheme in conjunction with a cohesive zone model. The fracture-toughness on the bond interface is varied to simulate the effect of surface roughness (nanotopography) and patterning. Our analysis indicated that the energetics of crack propagation is sensitive to the local surface property variations. The patterned wafers are tougher (well bonded) than the unpatterned ones of the same average fracture-toughness.

Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography

NASA Astrophysics Data System (ADS)

Guo, Xu; Ni, Mengyang; Zhuang, Zhe; Dai, Jiangping; Wu, Feixiang; Cui, Yushuang; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng

2016-04-01

A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal-organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Active sensors for health monitoring of aging aerospace structures

NASA Astrophysics Data System (ADS)

Giurgiutiu, Victor; Redmond, James M.; Roach, Dennis P.; Rackow, Kirk

2000-06-01

A project to develop non-intrusive active sensors that can be applied on existing aging aerospace structures for monitoring the onset and progress of structural damage (fatigue cracks and corrosion) is presented. The state of the art in active sensors structural health monitoring and damage detection is reviewed. Methods based on (a) elastic wave propagation and (b) electro-mechanical (E/M) impedance technique are cited and briefly discussed. The instrumentation of these specimens with piezoelectric active sensors is illustrated. The main detection strategies (E/M impedance for local area detection and wave propagation for wide area interrogation) are discussed. The signal processing and damage interpretation algorithms are tuned to the specific structural interrogation method used. In the high frequency E/M impedance approach, pattern recognition methods are used to compare impedance signatures taken at various time intervals and to identify damage presence and progression from the change in these signatures. In the wave propagation approach, the acousto- ultrasonic methods identifying additional reflection generated from the damage site and changes in transmission velocity and phase are used. Both approaches benefit from the use of artificial intelligence neural networks algorithms that can extract damage features based on a learning process. Design and fabrication of a set of structural specimens representative of aging aerospace structures is presented. Three built-up specimens, (pristine, with cracks, and with corrosion damage) are used. The specimen instrumentation with active sensors fabricated at the University of South Carolina is illustrated. Preliminary results obtained with the E/M impedance method on pristine and cracked specimens are presented.

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Contacting graphene in a 200 mm wafer silicon technology environment

NASA Astrophysics Data System (ADS)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

Learning Activity Predictors from Sensor Data: Algorithms, Evaluation, and Applications.

PubMed

Minor, Bryan; Doppa, Janardhan Rao; Cook, Diane J

2017-12-01

Recent progress in Internet of Things (IoT) platforms has allowed us to collect large amounts of sensing data. However, there are significant challenges in converting this large-scale sensing data into decisions for real-world applications. Motivated by applications like health monitoring and intervention and home automation we consider a novel problem called Activity Prediction , where the goal is to predict future activity occurrence times from sensor data. In this paper, we make three main contributions. First, we formulate and solve the activity prediction problem in the framework of imitation learning and reduce it to a simple regression learning problem. This approach allows us to leverage powerful regression learners that can reason about the relational structure of the problem with negligible computational overhead. Second, we present several metrics to evaluate activity predictors in the context of real-world applications. Third, we evaluate our approach using real sensor data collected from 24 smart home testbeds. We also embed the learned predictor into a mobile-device-based activity prompter and evaluate the app for 9 participants living in smart homes. Our results indicate that our activity predictor performs better than the baseline methods, and offers a simple approach for predicting activities from sensor data.

Wafer defect detection by a polarization-insensitive external differential interference contrast module.

PubMed

Nativ, Amit; Feldman, Haim; Shaked, Natan T

2018-05-01

We present a system that is based on a new external, polarization-insensitive differential interference contrast (DIC) module specifically adapted for detecting defects in semiconductor wafers. We obtained defect signal enhancement relative to the surrounding wafer pattern when compared with bright-field imaging. The new DIC module proposed is based on a shearing interferometer that connects externally at the output port of an optical microscope and enables imaging thin samples, such as wafer defects. This module does not require polarization optics (such as Wollaston or Nomarski prisms) and is insensitive to polarization, unlike traditional DIC techniques. In addition, it provides full control of the DIC shear and orientation, which allows obtaining a differential phase image directly on the camera (with no further digital processing) while enhancing defect detection capabilities, even if the size of the defect is smaller than the resolution limit. Our technique has the potential of future integration into semiconductor production lines.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

NASA Astrophysics Data System (ADS)

Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai-Quan; Bao, Qiaoliang; Kevehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-02-01

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (~1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals.

PubMed

Carey, Benjamin J; Ou, Jian Zhen; Clark, Rhiannon M; Berean, Kyle J; Zavabeti, Ali; Chesman, Anthony S R; Russo, Salvy P; Lau, Desmond W M; Xu, Zai-Quan; Bao, Qiaoliang; Kevehei, Omid; Gibson, Brant C; Dickey, Michael D; Kaner, Richard B; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-02-17

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

PubMed Central

Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai-Quan; Bao, Qiaoliang; Kavehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh

2017-01-01

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes. PMID:28211538

Detecting Human Activity Using Acoustic, Seismic, Accelerometer, Video, and E-field Sensors

DTIC Science & Technology

2011-09-01

Detecting Human Activity using Acoustic, Seismic, Accelerometer, Video, and E-field Sensors by Sarah H. Walker and Geoffrey H. Goldman...Adelphi, MD 20783-1197 ARL-TR-5729 September 2011 Detecting Human Activity using Acoustic, Seismic, Accelerometer, Video, and E-field Sensors...DD-MM-YYYY) September 2011 2. REPORT TYPE 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Detecting Human Activity using Acoustic

Wave-front propagation of rinsing flows on rotating semiconductor wafers

NASA Astrophysics Data System (ADS)

Frostad, John M.; Ylitalo, Andy; Walls, Daniel J.; Mui, David S. L.; Fuller, Gerald G.

2016-11-01

The semiconductor manufacturing industry is migrating to a cleaning technology that involves dispersing cleaning solutions onto a rotating wafer, similar to spin-coating. Advantages include a more continuous overall fabrication process, lower particle level, no cross contamination from the back side of a wafer, and less usage of harsh chemicals for a lower environmental impact. Rapid rotation of the wafer during rinsing can be more effective, but centrifugal forces can pull spiral-like ribbons of liquid radially outward from the advancing wave-front where particles can build up, causing higher instances of device failure at these locations. A better understanding of the rinsing flow is essential for reducing yield losses while taking advantage of the benefits of rotation. In the present work, high-speed video and image processing are used to study the dynamics of the advancing wave-front from an impinging jet on a rotating substrate. The flow-rate and rotation-speed are varied for substrates coated with a thin layer of a second liquid that has a different surface tension than the jet liquid. The difference in surface tension of the two fluids gives rise to Marangoni stresses at the interface that have a significant impact on the rinsing process, despite the extremely short time-scales involved.

Chemical Sensor Array Response Modeling Using Quantitative Structure-Activity Relationships Technique

NASA Astrophysics Data System (ADS)

Shevade, Abhijit V.; Ryan, Margaret A.; Homer, Margie L.; Zhou, Hanying; Manfreda, Allison M.; Lara, Liana M.; Yen, Shiao-Pin S.; Jewell, April D.; Manatt, Kenneth S.; Kisor, Adam K.

We have developed a Quantitative Structure-Activity Relationships (QSAR) based approach to correlate the response of chemical sensors in an array with molecular descriptors. A novel molecular descriptor set has been developed; this set combines descriptors of sensing film-analyte interactions, representing sensor response, with a basic analyte descriptor set commonly used in QSAR studies. The descriptors are obtained using a combination of molecular modeling tools and empirical and semi-empirical Quantitative Structure-Property Relationships (QSPR) methods. The sensors under investigation are polymer-carbon sensing films which have been exposed to analyte vapors at parts-per-million (ppm) concentrations; response is measured as change in film resistance. Statistically validated QSAR models have been developed using Genetic Function Approximations (GFA) for a sensor array for a given training data set. The applicability of the sensor response models has been tested by using it to predict the sensor activities for test analytes not considered in the training set for the model development. The validated QSAR sensor response models show good predictive ability. The QSAR approach is a promising computational tool for sensing materials evaluation and selection. It can also be used to predict response of an existing sensing film to new target analytes.

Differences between wafer and bake plate temperature uniformity in proximity bake: a theoretical and experimental study

NASA Astrophysics Data System (ADS)

Ramanan, Natarajan; Kozman, Austin; Sims, James B.

2000-06-01

As the lithography industry moves toward finer features, specifications on temperature uniformity of the bake plates are expected to become more stringent. Consequently, aggressive improvements are needed to conventional bake station designs to make them perform significantly better than current market requirements. To this end, we have conducted a rigorous study that combines state-of-the-art simulation tools and experimental methods to predict the impact of the parameters that influence the uniformity of the wafer in proximity bake. The key observation from this detailed study is that the temperature uniformity of the wafer in proximity mode depends on a number of parameters in addition to the uniformity of the bake plate itself. These parameters include the lid design, the air flow distribution around the bake chamber, bake plate design and flatness of the bake plate and wafer. By performing careful experimental studies that were guided by extensive numerical simulations, we were able to understand the relative importance of each of these parameters. In an orderly fashion, we made appropriate design changes to curtail or eliminate the nonuniformity caused by each of these parameters. After implementing all these changes, we have now been able to match or improve the temperature uniformity of the wafer in proximity with that of a contact measurement on the bake plate. The wafer temperature uniformity is also very close to the theoretically predicted uniformity of the wafer.

New getter configuration at wafer level for assuring long term stability of MEMs

NASA Astrophysics Data System (ADS)

Moraja, Marco; Amiotti, Marco; Kullberg, Richard C.

2003-01-01

The evolution from ceramic packages to wafer to wafer hermetic sealing poses tremendous technical challenges to integrate a proper getter inside the MEMs to assure a long term stability and reliability of the devices. The state of the art solution to integrate a getter inside the MEMs of the last generation consists in patterning the getter material with a specific geometry onto the Si cap wafer. The practical implementation of this solution consists in a 4" or 6" Si wafers with grooves or particular incisures, where the getter material is placed in form of a thick film. The typical thickness of these thick films is in the range of few microns, depending on the gas load to be handled during the lifetime of the device. The structure of the thick getter film is highly porous in order to improve sorption performances, but at the same time there are no loose particles thanks to a proprietary manufacturing method. The getter thick film is composed of a Zr special alloy with a proper composition to optimize the sorption performances. The getter thick film can be placed selectively into grooves without affecting the lateral regions, surrounding the grooves where the hermetic sealing is performed.

Camera-Based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers

NASA Astrophysics Data System (ADS)

Sun, Q. M.; Melnikov, A.; Mandelis, A.

2015-06-01

Carrierographic (spectrally gated photoluminescence) imaging of a crystalline silicon wafer using an InGaAs camera and two spread super-bandgap illumination laser beams is introduced in both low-frequency lock-in and high-frequency heterodyne modes. Lock-in carrierographic images of the wafer up to 400 Hz modulation frequency are presented. To overcome the frame rate and exposure time limitations of the camera, a heterodyne method is employed for high-frequency carrierographic imaging which results in high-resolution near-subsurface information. The feasibility of the method is guaranteed by the typical superlinearity behavior of photoluminescence, which allows one to construct a slow enough beat frequency component from nonlinear mixing of two high frequencies. Intensity-scan measurements were carried out with a conventional single-element InGaAs detector photocarrier radiometry system, and the nonlinearity exponent of the wafer was found to be around 1.7. Heterodyne images of the wafer up to 4 kHz have been obtained and qualitatively analyzed. With the help of the complementary lock-in and heterodyne modes, camera-based carrierographic imaging in a wide frequency range has been realized for fundamental research and industrial applications toward in-line nondestructive testing of semiconductor materials and devices.

New overlay measurement technique with an i-line stepper using embedded standard field image alignment marks for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2017-06-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules require addition backside processing of the wafer; thus an accurate alignment between the front and backside of the wafer is mandatory. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 μm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8]. Therefore, the available overlay measurement techniques are not suitable if overlay and alignment marks are realized at the bonding interface of a wafer stack which consists of both a silicon device and a silicon carrier wafer. The former used EVG 40NT automated overlay measurement system, which use two opposite positioned microscopes inspecting simultaneous the wafer back and front side, is not capable measuring embedded overlay

Wafer-Scale Integration of Systolic Arrays,

DTIC Science & Technology

1985-10-01

hus wtha rbaiith hig robabili, e aubrbe orutysta mostck b(e)adstotoefwsi the cenofther cnnel thati are connted to (g.The kery ato the alevel of t...problems considered heretofore in this paper also have an interpretation in a purely graph theoretic model. Suppose we are given a two-dimensional...graphs," Magyar 7Td. Akad. Math . Kut. Int. Kozl, Vol. 5, 1960, pp. 17-61. [6] D. Fussell and P. Varman, "Fault-tolerant wafer-scale architectures for

Monitoring activities of daily living based on wearable wireless body sensor network.

PubMed

Kańtoch, E; Augustyniak, P; Markiewicz, M; Prusak, D

2014-01-01

With recent advances in microprocessor chip technology, wireless communication, and biomedical engineering it is possible to develop miniaturized ubiquitous health monitoring devices that are capable of recording physiological and movement signals during daily life activities. The aim of the research is to implement and test the prototype of health monitoring system. The system consists of the body central unit with Bluetooth module and wearable sensors: the custom-designed ECG sensor, the temperature sensor, the skin humidity sensor and accelerometers placed on the human body or integrated with clothes and a network gateway to forward data to a remote medical server. The system includes custom-designed transmission protocol and remote web-based graphical user interface for remote real time data analysis. Experimental results for a group of humans who performed various activities (eg. working, running, etc.) showed maximum 5% absolute error compared to certified medical devices. The results are promising and indicate that developed wireless wearable monitoring system faces challenges of multi-sensor human health monitoring during performing daily activities and opens new opportunities in developing novel healthcare services.

Switchable static friction of piezoelectric composite—silicon wafer contacts

NASA Astrophysics Data System (ADS)

van den Ende, D. A.; Fischer, H. R.; Groen, W. A.; van der Zwaag, S.

2013-04-01

The meso-scale surface roughness of piezoelectric fiber composites can be manipulated by applying an electric field to a piezocomposite with a polished surface. In the absence of an applied voltage, the tips of the embedded piezoelectric ceramic fibers are below the surface of the piezocomposite and a silicon wafer counter surface rests solely on the matrix region of the piezocomposite surface. When actuated, the piezoelectric ceramic fibers protrude from the surface and the wafer rests solely on these protrusions. A threefold decrease in engineering static friction coefficient upon actuation of the piezocomposite was observed: from μ* = 1.65 to μ* = 0.50. These experimental results could be linked to the change in contact surface area and roughness using capillary adhesion theory, which relates the adhesive force to the number and size of the contacting asperities for the different surface states.

Developing sensor activity relationships for the JPL electronic nose sensors using molecular modeling and QSAR techniques

NASA Technical Reports Server (NTRS)

Shevade, A. V.; Ryan, M. A.; Homer, M. L.; Jewell, A. D.; Zhou, H.; Manatt, K.; Kisor, A. K.

2005-01-01

We report a Quantitative Structure-Activity Relationships (QSAR) study using Genetic Function Approximations (GFA) to describe the polymer-carbon composite sensor activities in the JPL Electronic Nose, when exposed to chemical vapors at parts-per-million concentration levels.

A Comprehensive Analysis on Wearable Acceleration Sensors in Human Activity Recognition.

PubMed

Janidarmian, Majid; Roshan Fekr, Atena; Radecka, Katarzyna; Zilic, Zeljko

2017-03-07

Sensor-based motion recognition integrates the emerging area of wearable sensors with novel machine learning techniques to make sense of low-level sensor data and provide rich contextual information in a real-life application. Although Human Activity Recognition (HAR) problem has been drawing the attention of researchers, it is still a subject of much debate due to the diverse nature of human activities and their tracking methods. Finding the best predictive model in this problem while considering different sources of heterogeneities can be very difficult to analyze theoretically, which stresses the need of an experimental study. Therefore, in this paper, we first create the most complete dataset, focusing on accelerometer sensors, with various sources of heterogeneities. We then conduct an extensive analysis on feature representations and classification techniques (the most comprehensive comparison yet with 293 classifiers) for activity recognition. Principal component analysis is applied to reduce the feature vector dimension while keeping essential information. The average classification accuracy of eight sensor positions is reported to be 96.44% ± 1.62% with 10-fold evaluation, whereas accuracy of 79.92% ± 9.68% is reached in the subject-independent evaluation. This study presents significant evidence that we can build predictive models for HAR problem under more realistic conditions, and still achieve highly accurate results.

Characteristics research of pressure sensor based on nanopolysilicon thin films resistors

NASA Astrophysics Data System (ADS)

Zhao, Xiaofeng; Li, Dandan; Wen, Dianzhong

2017-10-01

To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a 〈100〉 orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when I = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about -1742 ppm/∘C in the range of -40-140∘C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.

Wafer-scale aluminum nano-plasmonics

NASA Astrophysics Data System (ADS)

George, Matthew C.; Nielson, Stew; Petrova, Rumyana; Frasier, James; Gardner, Eric

2014-09-01

The design, characterization, and optical modeling of aluminum nano-hole arrays are discussed for potential applications in surface plasmon resonance (SPR) sensing, surface-enhanced Raman scattering (SERS), and surface-enhanced fluorescence spectroscopy (SEFS). In addition, recently-commercialized work on narrow-band, cloaked wire grid polarizers composed of nano-stacked metal and dielectric layers patterned over 200 mm diameter wafers for projection display applications is reviewed. The stacked sub-wavelength nanowire grid results in a narrow-band reduction in reflectance by 1-2 orders of magnitude, which can be tuned throughout the visible spectrum for stray light control.

Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiriolo, Raffaele; Rangnekar, Neel; Zhang, Han

A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservationmore » of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.« less

Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

PubMed

Logan, Andrew; Yeow, John T W

2009-05-01

We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.

Design Expert Supported Mathematical Optimization and Predictability Study of Buccoadhesive Pharmaceutical Wafers of Loratadine

PubMed Central

Dey, Surajit; Parcha, Versha; Bhattacharya, Shiv Sankar; Ghosh, Amitava

2013-01-01

Objective. The objective of this work encompasses the application of the response surface approach in the development of buccoadhesive pharmaceutical wafers of Loratadine (LOR). Methods. Experiments were performed according to a 32 factorial design to evaluate the effects of buccoadhesive polymer, sodium alginate (A), and lactose monohydrate as ingredient, of hydrophilic matrix former (B) on the bioadhesive force, disintegration time, percent (%) swelling index, and time taken for 70% drug release (t 70%). The effect of the two independent variables on the response variables was studied by response surface plots and contour plots generated by the Design-Expert software. The desirability function was used to optimize the response variables. Results. The compatibility between LOR and the wafer excipients was confirmed by differential scanning calorimetry, FTIR spectroscopy, and X-ray diffraction (XRD) analysis. Bioadhesion force, measured with TAXT2i texture analyzer, showed that the wafers had a good bioadhesive property which could be advantageous for retaining the drug into the buccal cavity. Conclusion. The observed responses taken were in agreement with the experimental values, and Loratadine wafers were produced with less experimental trials, and a patient compliant product was achieved with the concept of formulation by design. PMID:23781498

Controlling Wafer Contamination Using Automated On-Line Metrology during Wet Chemical Cleaning

NASA Astrophysics Data System (ADS)

Wang, Jason; Kingston, Skip; Han, Ye; Saini, Harmesh; McDonald, Robert; Mui, Rudy

2003-09-01

The capabilities of a trace contamination analyzer are discussed and demonstrated. This analytical tool utilizes an electrospray, time-of-flight mass spectrometer (ES-TOF-MS) for fully automated on-line monitoring of wafer cleaning solutions. The analyzer provides rich information on metallic, anionic, cationic, elemental, and organic species through its ability to provide harsh (elemental) and soft (molecular) ionization under both positive and negative modes. It is designed to meet semiconductor process control and yield management needs for the ever increasing complex new chemistries present in wafer fabrication.

Acoustic-sensor-based detection of damage in composite aircraft structures

NASA Astrophysics Data System (ADS)

Foote, Peter; Martin, Tony; Read, Ian

2004-03-01

Acoustic emission detection is a well-established method of locating and monitoring crack development in metal structures. The technique has been adapted to test facilities for non-destructive testing applications. Deployment as an operational or on-line automated damage detection technology in vehicles is posing greater challenges. A clear requirement of potential end-users of such systems is a level of automation capable of delivering low-level diagnosis information. The output from the system is in the form of "go", "no-go" indications of structural integrity or immediate maintenance actions. This level of automation requires significant data reduction and processing. This paper describes recent trials of acoustic emission detection technology for the diagnosis of damage in composite aerospace structures. The technology comprises low profile detection sensors using piezo electric wafers encapsulated in polymer film ad optical sensors. Sensors are bonded to the structure"s surface and enable acoustic events from the loaded structure to be located by triangulation. Instrumentation has been enveloped to capture and parameterise the sensor data in a form suitable for low-bandwidth storage and transmission.

Highly Transparent Wafer-Scale Synthesis of Crystalline WS2 Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications.

PubMed

Pawbake, Amit S; Waykar, Ravindra G; Late, Dattatray J; Jadkar, Sandesh R

2016-02-10

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E(1)2g and A1g at ∼356 and ∼420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of ∼12 s and recovery time of ∼13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of ∼51 s and recovery time of ∼88 s were observed with sensitivity ∼137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

Automatic vision-based grain optimization and analysis of multi-crystalline solar wafers using hierarchical region growing

NASA Astrophysics Data System (ADS)

Fan, Shu-Kai S.; Tsai, Du-Ming; Chuang, Wei-Che

2017-04-01

Solar power has become an attractive alternative source of energy. The multi-crystalline solar cell has been widely accepted in the market because it has a relatively low manufacturing cost. Multi-crystalline solar wafers with larger grain sizes and fewer grain boundaries are higher quality and convert energy more efficiently than mono-crystalline solar cells. In this article, a new image processing method is proposed for assessing the wafer quality. An adaptive segmentation algorithm based on region growing is developed to separate the closed regions of individual grains. Using the proposed method, the shape and size of each grain in the wafer image can be precisely evaluated. Two measures of average grain size are taken from the literature and modified to estimate the average grain size. The resulting average grain size estimate dictates the quality of the crystalline solar wafers and can be considered a viable quantitative indicator of conversion efficiency.

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

DOE PAGES

Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; ...

2015-10-15

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes

Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator