Thin layer composite unimorph ferroelectric driver and sensor

NASA Technical Reports Server (NTRS)

Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

2004-01-01

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

NASA Technical Reports Server (NTRS)

Helbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Antony, Jr. (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

1995-01-01

A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

DOE PAGES

Bubna, M.; Bolla, G.; Bortoletto, D.; ...

2015-08-03

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 10 34 cm –2s –1 and collect ~ 3000fb –1 of data. The innermost layer of the pixel detector will be exposed to doses of about 10 16 n eq/ cm 2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have beenmore » fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.« less

Reduction of across-wafer CDU via constrained optimization of a multichannel PEB plate controller based on in-situ measurements of thermal time constants

NASA Astrophysics Data System (ADS)

Tiffany, Jason E.; Cohen, Barney M.

2004-05-01

As line widths approach 90nm node in volume production, post exposure bake (PEB) uniformity becomes a much larger component of the across wafer critical dimension uniformity (CDU). In production, the need for PEB plate matching has led to novel solutions such as plate specific dose offsets. This type of correction does not help across wafer CDU. Due to unequal activation energies of the critical PEB processes, any thermal history difference can result in a corresponding CD variation. The rise time of the resist to the target temperature has been shown to affect CD, with the most critical time being the first 5-7 seconds. A typical PEB plate has multi-zone thermal control with one thermal sensor per zone. The current practice is to setup each plate to match the steady-state target temperature, ignoring any dynamic performance. Using an in-situ wireless RTD wafer, it is possible to characterize the dynamic performance, or time constant, of each RTD location on the sensing wafer. Constrained by the zone structure of the PEB plate, the proportional, integral and derivative (PID) settings of each controller channel could be optimized to reduce the variations in rise time across the RTD wafer, thereby reducing the PEB component of across wafer CDU.

Wafer-scale pixelated detector system

DOEpatents

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

2017-10-17

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Surface-mount sapphire interferometric temperature sensor.

PubMed

Zhu, Yizheng; Wang, Anbo

2006-08-20

A fiber-optic high-temperature sensor is demonstrated by bonding a 45 degrees -polished single-crystal sapphire fiber on the surface of a sapphire wafer, whose optical thickness is temperature dependent and measured by white-light interferometry. A novel adhesive-free coupling between the silica and sapphire fibers is achieved by fusion splicing, and its performance is characterized. The sensor's interference signal is investigated for its dependence on angular alignment between the fiber and the wafer. A prototype sensor is tested to 1,170 degrees C with a resolution of 0.4 degrees C, demonstrating excellent potential for high-temperature measurement.

MEMS for Practical Applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

Silicon MEMS as electrostatically levitated rotational gyroscopes and 2D optical scanners, and wafer level packaged devices as integrated capacitive pressure sensors and MEMS switches are described. MEMS which use non-silicon materials as LTCC with electrical feedthrough, SiC and LiNbO3 for probe cards for wafer-level burn-in test, molds for glass press molding and SAW wireless passive sensors respectively are also described.

A Micromachined Geometric Moire Interferometric Floating-Element Shear Stress Sensor

NASA Technical Reports Server (NTRS)

Horowitz, S.; Chen, T.; Chandrasekaran, V.; Tedjojuwono, K.; Nishida, T.; Cattafesta, L.; Sheplak, M.

2004-01-01

This paper presents the development of a floating-element shear stress sensor that permits the direct measurement of skin friction based on geometric Moir interferometry. The sensor was fabricated using an aligned wafer-bond/thin-back process producing optical gratings on the backside of a floating element and on the top surface of the support wafer. Experimental characterization indicates a static sensitivity of 0.26 microns/Pa, a resonant frequency of 1.7 kHz, and a noise floor of 6.2 mPa/(square root)Hz.

Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

NASA Astrophysics Data System (ADS)

Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

2017-06-01

Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

Contactless measurement of electrical conductivity of semiconductor wafers using the reflection of millimeter waves

NASA Astrophysics Data System (ADS)

Ju, Yang; Inoue, Kojiro; Saka, Masumi; Abe, Hiroyuki

2002-11-01

We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter waves. A focusing sensor was developed to focus a 110 GHz millimeter wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter wave signal were measured by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafers. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method.

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

Multiphysics Simulation of Low-Amplitude Acoustic Wave Detection by Piezoelectric Wafer Active Sensors Validated by In-Situ AE-Fatigue Experiment

PubMed Central

Giurgiutiu, Victor

2017-01-01

Piezoelectric wafer active sensors (PWAS) are commonly used for detecting Lamb waves for structural health monitoring application. However, in most applications of active sensing, the signals are of high-amplitude and easy to detect. In this article, we have shown a new avenue of using the PWAS transducer for detecting the low-amplitude fatigue-crack related acoustic emission (AE) signals. Multiphysics finite element (FE) simulations were performed with two PWAS transducers bonded to the structure. Various configurations of the sensors were studied by using the simulations. One PWAS was placed near to the fatigue-crack and the other one was placed at a certain distance from the crack. The simulated AE event was generated at the crack tip. The simulation results showed that both PWAS transducers were capable of sensing the AE signals. To validate the multiphysics simulation results, an in-situ AE-fatigue experiment was performed. Two PWAS transducers were bonded to the thin aerospace test coupon. The fatigue crack was generated in the test coupon which had produced low-amplitude acoustic waves. The low-amplitude fatigue-crack related AE signals were successfully captured by the PWAS transducers. The distance effect on the captured AE signals was also studied. It has been shown that some high-frequency contents of the AE signal have developed as they travel away from the crack. PMID:28817081

Numerical Modeling of Inverse Problems under Uncertainty for Damage Detection in Aircraft Structures

DTIC Science & Technology

2013-08-01

et al . (2007): Structural health monitoring with piezoelectric wafer active sensors for space applications, AIAA JOURNAL, V. 45, p. 2838-2850. [4...International Journal of Heat and Mass Transfer, v. 55, p. 2219 -2228. 4. Myers, MR; Jorge, AB; Mutton, MJ; Walker, DG (2012): High heat flux point

Sapphire Fabry-Perot high-temperature sensor study

NASA Astrophysics Data System (ADS)

Yao, Yi-qiang; Liang, Wei-long; Gui, Xinwang; Fan, Dian

2017-04-01

A new structure sapphire fiber Fabry-Perot (F-P) high-temperature sensor based on sapphire wafer was proposed and fabricated. The sensor uses the sapphire fiber as a transmission waveguide, the sapphire wafer as an Fabry-Perot (F-P) interferometer and the new structure of "Zirconia ferrule-Zirconia tube" as the sensor fixing structure of the sensor. The reflection spectrum of the interferometer was demodulated by a serial of data processing including FIR bandpass filter, FFT (Fast Fourier Transformation) estimation and LSE (least squares estimation) compensation to obtain more precise OPD. Temperature measurement range is from 20 to 1000°C in experiment. The experimental results show that the sensor has the advantages of small size, low cost, simple fabrication and high repeatability. It can be applied for longterm, stable and high-precision high temperature measurement in harsh environments.

Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fang, Fang; Vaid, Alok; Vinslava, Alina; Casselberry, Richard; Mishra, Shailendra; Dixit, Dhairya; Timoney, Padraig; Chu, Dinh; Porter, Candice; Song, Da; Ren, Zhou

2018-03-01

It is getting more important to monitor all aspects of influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. Meanwhile, we took a dive in pursuing "measuring what matters" and challenged ourselves for more aspects of signals acquired in actual process conditions. Among these factors which are considered subtle previously, we identified Temperature, especially electrostatic chuck (ESC) Temperature measurement in real etch process conditions have direct correlation to in-line measurements. In this work, we used SensArray technique (EtchTemp-SE wafer) to measure ESC temperature profile on a 300mm wafer with plasma turning on to reproduce actual temperature pattern on wafers in real production process conditions. In field applications, we observed substantial correlation between ESC temperature and in-line optical metrology measurements and since temperature is a process factor that can be tuning through set-temperature modulations, we have identified process knobs with known impact on physical profile variations. Furthermore, ESC temperature profile on a 300mm wafer is configured as multiple zones upon radius and SensArray measurements mechanism could catch such zonal distribution as well, which enables detailed temperature modulations targeting edge ring only where most of chips can be harvested and critical zone for yield enhancement. Last but not least, compared with control reference (ESC Temperature in static plasma-off status), we also get additional factors to investigate in chamber-to-chamber matching study and make process tool fleet match on the basis really matters in production. KLA-Tencor EtchTemp-SE wafer enables Plasma On wafer temperature monitoring of silicon etch process. This wafer is wireless and has 65 sensors with measurement range from 20 to 140°C. the wafer is designed to run in real production recipe plasma on condition with maximum RF power up to 7KW. The wafer surface is coated with Yttrium oxide film which allows Silicon Etch chemistry. At Fab-8, we carried investigations in 14 nm FEOL critical etch process which has direct impact on yield, using SensorArray EtchTemp-SE wafer, we measured ESC temperature profile across multiple chambers, for both plasma on and plasma off, promising results achieved on chamber temperature signature identification, guideline for chamber to chamber matching improvement. Correlation between wafer mean temperature and determining criticality-process parameters of recess depth and CD is observed. Furthermore, detail zonal temperature/profile correlation is investigated to identify individual correlation in each chuck zone, and provided unique process knobs corresponding to each chunk. Meanwhile, passive ESC Chuck DOE was done to modulate wafer temperature at different zones, and Sensor Array wafer measurements verified temperature responding well with the ESC set point. Correlation R2 = 0.9979 for outer ring and R2 = 0.9981 for Mid Outer ring is observed, as shown in . Experiments planning to modulate edge zone ESC temperature to tune profile within-wafer uniformity and prove gain in edge yield enhancement and to improve edge yield is underway.

Low-cost far infrared bolometer camera for automotive use

NASA Astrophysics Data System (ADS)

Vieider, Christian; Wissmar, Stanley; Ericsson, Per; Halldin, Urban; Niklaus, Frank; Stemme, Göran; Källhammer, Jan-Erik; Pettersson, Håkan; Eriksson, Dick; Jakobsen, Henrik; Kvisterøy, Terje; Franks, John; VanNylen, Jan; Vercammen, Hans; VanHulsel, Annick

2007-04-01

A new low-cost long-wavelength infrared bolometer camera system is under development. It is designed for use with an automatic vision algorithm system as a sensor to detect vulnerable road users in traffic. Looking 15 m in front of the vehicle it can in case of an unavoidable impact activate a brake assist system or other deployable protection system. To achieve our cost target below €100 for the sensor system we evaluate the required performance and can reduce the sensitivity to 150 mK and pixel resolution to 80 x 30. We address all the main cost drivers as sensor size and production yield along with vacuum packaging, optical components and large volume manufacturing technologies. The detector array is based on a new type of high performance thermistor material. Very thin Si/SiGe single crystal multi-layers are grown epitaxially. Due to the resulting valence barriers a high temperature coefficient of resistance is achieved (3.3%/K). Simultaneously, the high quality crystalline material provides very low 1/f-noise characteristics and uniform material properties. The thermistor material is transferred from the original substrate wafer to the read-out circuit using adhesive wafer bonding and subsequent thinning. Bolometer arrays can then be fabricated using industry standard MEMS process and materials. The inherently good detector performance allows us to reduce the vacuum requirement and we can implement wafer level vacuum packaging technology used in established automotive sensor fabrication. The optical design is reduced to a single lens camera. We develop a low cost molding process using a novel chalcogenide glass (GASIR®3) and integrate anti-reflective and anti-erosion properties using diamond like carbon coating.

Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

NASA Astrophysics Data System (ADS)

Higurashi, Eiji

2018-04-01

Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.

Heterogeneously integrated microsystem-on-a-chip

DOEpatents

Chanchani, Rajen [Albuquerque, NM

2008-02-26

A microsystem-on-a-chip comprises a bottom wafer of normal thickness and a series of thinned wafers can be stacked on the bottom wafer, glued and electrically interconnected. The interconnection layer comprises a compliant dielectric material, an interconnect structure, and can include embedded passives. The stacked wafer technology provides a heterogeneously integrated, ultra-miniaturized, higher performing, robust and cost-effective microsystem package. The highly integrated microsystem package, comprising electronics, sensors, optics, and MEMS, can be miniaturized both in volume and footprint to the size of a bottle-cap or less.

Stress modeling of microdiaphragm pressure sensors

NASA Technical Reports Server (NTRS)

Tack, P. C.; Busta, H. H.

1986-01-01

A finite element program analysis was used to model the stress distribution of two monocrystalline silicon diaphragm pressure sensors. One configuration consists of an anisotropically backside etched diaphragm into a 250 micron thick, (100) oriented, silicon wafer. The diaphragm and total chip dimensions are given. The device is rigidly clamped on the back to a support substrate. Another configuration consists of a monocrystalline, (100), microdiaphragm which is formed on top of the wafer and whose area is reduced by a factor of 25 over the first configuration. The diaphragm is rigidly clamped to the silicon wafer. The stresses were calculated at a gauge pressure of 300 mm Hg and used to estimate the piezoresistive responses of resistor elements which were placed parallel and perpendicular near the diaphragm edges.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

A Lorentz force actuated magnetic field sensor with capacitive read-out

NASA Astrophysics Data System (ADS)

Stifter, M.; Steiner, H.; Kainz, A.; Keplinger, F.; Hortschitz, W.; Sauter, T.

2013-05-01

We present a novel design of a resonant magnetic field sensor with capacitive read-out permitting wafer level production. The device consists of a single-crystal silicon cantilever manufactured from the device layer of an SOI wafer. Cantilevers represent a very simple structure with respect to manufacturing and function. On the top of the structure, a gold lead carries AC currents that generate alternating Lorentz forces in an external magnetic field. The free end oscillation of the actuated cantilever depends on the eigenfrequencies of the structure. Particularly, the specific design of a U-shaped structure provides a larger force-to-stiffness-ratio than standard cantilevers. The electrodes for detecting cantilever deflections are separately fabricated on a Pyrex glass-wafer. They form the counterpart to the lead on the freely vibrating planar structure. Both wafers are mounted on top of each other. A custom SU-8 bonding process on wafer level creates a gap which defines the equilibrium distance between sensing electrodes and the vibrating structure. Additionally to the capacitive read-out, the cantilever oscillation was simultaneously measured with laser Doppler vibrometry through proper windows in the SOI handle wafer. Advantages and disadvantages of the asynchronous capacitive measurement configuration are discussed quantitatively and presented by a comprehensive experimental characterization of the device under test.

Chemical multisensors with selective encapsulation of ion-selective membranes

NASA Astrophysics Data System (ADS)

Schwager, Felix J.; Bousse, Luc J.; Bowman, Lyn; Meindl, J. D.

Chemical sensors fabricated with simultaneous wafer scale encapsulation of ion selective electrode mambranes are described. The sensors are miniature ion selective electrodes in chambers located on a silicon substrate. These chambers are made by anodically bonding to the silicon a no. 7740 pyrex glass wafer in which cavities were drilled. Pores with dimensions selectable from 50 microns upwards are opened in the roofs of the chambers by drilling with a CO2 laser. Each sensor die contains four cavities which are filled under reduced pressure with liquid membrane material which is subsequently polymerized. The transducers on the cavity floor are Ag/AgCl electrodes. Interconnects between the sensor chambers on each die and bonding pads are made in the silicon substrate.

Micro/nano electro mechanical systems for practical applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

2009-09-01

Silicon MEMS as electrostatically levitated rotational gyroscope, 2D optical scanner and wafer level packaged devices as integrated capacitive pressure sensor and MEMS switch are described. MEMS which use non-silicon materials as diamond, PZT, conductive polymer, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography system, probe card for wafer-level burn-in test, mould for glass press moulding and SAW wireless passive sensor respectively are also described.

Full-wafer fabrication by nanostencil lithography of micro/nanomechanical mass sensors monolithically integrated with CMOS.

PubMed

Arcamone, J; van den Boogaart, M A F; Serra-Graells, F; Fraxedas, J; Brugger, J; Pérez-Murano, F

2008-07-30

Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 µm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ∼2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10(-11) g cm(-2) Hz(-1), and their thickness resolution corresponds to approximately a thousandth of a monolayer.

Functional Testing and Characterisation of ISFETs on Wafer Level by Means of a Micro-droplet Cell#

PubMed Central

Poghossian, Arshak; Schumacher, Kerstin; Kloock, Joachim P.; Rosenkranz, Christian; Schultze, Joachim W.; Müller-Veggian, Mattea; Schöning, Michael J.

2006-01-01

A wafer-level functionality testing and characterisation system for ISFETs (ion-sensitive field-effect transistor) is realised by means of integration of a specifically designed capillary electrochemical micro-droplet cell into a commercial wafer prober-station. The developed system allows the identification and selection of “good” ISFETs at the earliest stage and to avoid expensive bonding, encapsulation and packaging processes for non-functioning ISFETs and thus, to decrease costs, which are wasted for bad dies. The developed system is also feasible for wafer-level characterisation of ISFETs in terms of sensitivity, hysteresis and response time. Additionally, the system might be also utilised for wafer-level testing of further electrochemical sensors.

Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

CZT sensors for Computed Tomography: from crystal growth to image quality

NASA Astrophysics Data System (ADS)

Iniewski, K.

2016-12-01

Recent advances in Traveling Heater Method (THM) growth and device fabrication that require additional processing steps have enabled to dramatically improve hole transport properties and reduce polarization effects in Cadmium Zinc Telluride (CZT) material. As a result high flux operation of CZT sensors at rates in excess of 200 Mcps/mm2 is now possible and has enabled multiple medical imaging companies to start building prototype Computed Tomography (CT) scanners. CZT sensors are also finding new commercial applications in non-destructive testing (NDT) and baggage scanning. In order to prepare for high volume commercial production we are moving from individual tile processing to whole wafer processing using silicon methodologies, such as waxless processing, cassette based/touchless wafer handling. We have been developing parametric level screening at the wafer stage to ensure high wafer quality before detector fabrication in order to maximize production yields. These process improvements enable us, and other CZT manufacturers who pursue similar developments, to provide high volume production for photon counting applications in an economically feasible manner. CZT sensors are capable of delivering both high count rates and high-resolution spectroscopic performance, although it is challenging to achieve both of these attributes simultaneously. The paper discusses material challenges, detector design trade-offs and ASIC architectures required to build cost-effective CZT based detection systems. Photon counting ASICs are essential part of the integrated module platforms as charge-sensitive electronics needs to deal with charge-sharing and pile-up effects.

Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

NASA Astrophysics Data System (ADS)

Unno, Y.; Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Lynn, D.; Carter, J. R.; Hommels, L. B. A.; Robinson, D.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Betancourt, C.; Jakobs, K.; Kuehn, S.; Mori, R.; Parzefall, U.; Wiik-Fucks, L.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; Eklund, L.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Nishimura, R.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Allport, P. P.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandic, I.; Mikuz, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Arai, Y.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Ely, S.; Fadeyev, V.; Galloway, Z.; Grillo, A. A.; Martinez-McKinney, F.; Ngo, J.; Parker, C.; Sadrozinski, H. F.-W.; Schumacher, D.; Seiden, A.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Paganis, S.; Jinnouchi, O.; Motohashi, K.; Todome, K.; Yamaguchi, D.; Hara, K.; Hagihara, M.; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti i Garcia, S.; Soldevila, U.

2014-11-01

We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

NASA Astrophysics Data System (ADS)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Pappas, C. G.; Salatino, M.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Van Lanen, J.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-08-01

Advanced ACTPol (AdvACT) is a third-generation cosmic microwave background receiver to be deployed in 2016 on the Atacama Cosmology Telescope (ACT). Spanning five frequency bands from 25 to 280 GHz and having just over 5600 transition-edge sensor (TES) bolometers, this receiver will exhibit increased sensitivity and mapping speed compared to previously fielded ACT instruments. This paper presents the fabrication processes developed by NIST to scale to large arrays of feedhorn-coupled multichroic AlMn-based TES polarimeters on 150-mm diameter wafers. In addition to describing the streamlined fabrication process which enables high yields of densely packed detectors across larger wafers, we report the details of process improvements for sensor (AlMn) and insulator (SiN_x) materials and microwave structures, and the resulting performance improvements.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

NASA Technical Reports Server (NTRS)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.;

Development of Hybrid Sensor Arrays for Sensor Arrays for Simultaneous Measurement of Pressure and Shear Stress Distribution

NASA Technical Reports Server (NTRS)

2000-01-01

This document reports on the progress in developing hybrid sensors for the simultaneous measurement of pressure and shear stress. The key feature for the success of the proposed hybrid sensor array is the ability to deposit Cu-Ni alloy with proper composition (55 - 45) on a silicon wafer to form a strain gage. This alloy strain gage replaces the normally used Si strain gages in MEMS, which are highly nonlinear and temperature dependent. The copper nickel, with proper composition (55 - 45), was successfully deposited on a silicon wafer with a few trials during this period of the project. Pictures of the Cu-Ni alloy strain gage and the x-ray spectra indicating the composition are shown. The planned tests are also reviewed.

Orthogonal Chip Based Electronic Sensors for Chemical Agents

DTIC Science & Technology

2012-04-06

operation with ultralow power requirements. This work has been carried out with the aid of substrate wafers provided by Qualcomm . The initial...produced by Qualcomm as a less expensive OTFT platform for sensors. 8. New Discoveries Air-stable organic thin-film transistor (OTFT) sensors

High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor.

PubMed

Wang, Liying; Du, Xiaohui; Wang, Lingyun; Xu, Zhanhao; Zhang, Chenying; Gu, Dandan

2017-03-16

In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS) stackable structure and integrated Ti getter. A double-layer structure similar to a silicon-on-insulator (SOI) wafer is formed after the resonant layer and the pressure-sensitive layer are bonded by silicon direct bonding (SDB). In order to form good bonding quality between the pressure-sensitive layer and the glass cap layer, the cross-layer anodic bonding technique is proposed for vacuum package by sputtering Aluminum (Al) on the combination wafer of the pressure-sensitive layer and the resonant layer to achieve electrical interconnection. The model and the bonding effect of this technique are discussed. In addition, in order to enhance the performance of titanium (Ti) getter, the prepared and activation parameters of Ti getter under different sputtering conditions are optimized and discussed. Based on the optimized results, the Ti getter (thickness of 300 nm to 500 nm) is also deposited on the inside of the glass groove by magnetron sputtering to maintain stable quality factor (Q). The Q test of the built testing system shows that the number of resonators with a Q value of more than 10,000 accounts for more than 73% of the total. With an interval of 1.5 years, the Q value of the samples remains almost constant. It proves the proposed cross-layer anodic bonding and getter technique can realize high-Q resonant structure for long-term stable operation.

Thinning of PLZT ceramic wafers for sensor integration

NASA Astrophysics Data System (ADS)

Jin, Na; Liu, Weiguo

2010-08-01

Characteristics of transparent PLZT ceramics can be tailored by controlling the component of them, and therefore showed excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. To integrate the ceramics with microelectronic circuit to realize integrated applications, the ceramic wafers have to be thinned down to micrometer scale in thickness. A7/65/35 PLZT ceramic wafer was selected in this study for the thinning process. Size of the wafer was 10×10mm with an initial thickness of 300μm. A novel membrane transfer process (MTP) was developed for the thinning and integration of the ceramic wafers. In the MTP process, the ceramic wafer was bonded to silicon wafer using a polymer bonding method. Mechanical grinding method was applied to reduce the thickness of the ceramic. To minimize the surface damage in the ceramic wafer caused by the mechanical grinding, magnetorheological finishing (MRF) method was utilized to polish the wafer. White light interference (WLI) apparatus was used to monitor the surface qualities of the grinded and ploished ceramic wafers. For the PLZT membrane obtained from the MTP process, the final thickness of the thinned and polished wafer was 10μm, the surface roughness was below 1nm in rms, and the flatness was better than λ/5.

Edge printability: techniques used to evaluate and improve extreme wafer edge printability

NASA Astrophysics Data System (ADS)

Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

2004-05-01

The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

Embedded and conventional ultrasonic sensors for monitoring acoustic emission during thermal fatigue

NASA Astrophysics Data System (ADS)

Trujillo, Blaine; Zagrai, Andrei

2016-04-01

Acoustic emission is widely used for monitoring pressure vessels, pipes, critical infrastructure, as well as land, sea and air vehicles. It is one of dominant approaches to explore material degradation under fatigue and events leading to material fracture. Addressing a recent interest in structural health monitoring of space vehicles, a need has emerged to evaluate material deterioration due to thermal fatigue during spacecraft atmospheric reentry. Thermal fatigue experiments were conducted, in which aluminum plates were subjected to localized heating and acoustic emission was monitoring by embedded and conventional acoustic emission sensors positioned at various distances from a heat source. At the same time, surface temperature of aluminum plates was monitored using an IR camera. Acoustic emission counts collected by embedded sensors were compared to counts measured with conventional acoustic emission sensors. Both types of sensors show noticeable increase of acoustic emission activity as localized heating source was applied to aluminum plates. Experimental data demonstrate correlation between temperature increase on the surface of the plates and increase in measured acoustic emission activity. It is concluded that under particular conditions, embedded piezoelectric wafer active sensors can be used for acoustic emission monitoring of thermally-induced structural degradation.

Wafer-scale fabrication of polymer-based microdevices via injection molding and photolithographic micropatterning protocols.

PubMed

Lee, Dae-Sik; Yang, Haesik; Chung, Kwang-Hyo; Pyo, Hyeon-Bong

2005-08-15

Because of their broad applications in biomedical analysis, integrated, polymer-based microdevices incorporating micropatterned metallic and insulating layers are significant in contemporary research. In this study, micropatterns for temperature sensing and microelectrode sets for electroanalysis have been implemented on an injection-molded thin polymer membrane by employing conventional semiconductor processing techniques (i.e., standard photolithographic methods). Cyclic olefin copolymer (COC) is chosen as the polymer substrate because of its high chemical and thermal stability. A COC 5-in. wafer (1-mm thickness) is manufactured using an injection molding method, in which polymer membranes (approximately 130 microm thick and 3 mm x 6 mm in area) are implemented simultaneously in order to reduce local thermal mass around micropatterned heaters and temperature sensors. The highly polished surface (approximately 4 nm within 40 microm x 40 microm area) of the fabricated COC wafer as well as its good resistance to typical process chemicals makes it possible to use the standard photolithographic and etching protocols on the COC wafer. Gold micropatterns with a minimum 5-microm line width are fabricated for making microheaters, temperature sensors, and microelectrodes. An insulating layer of aluminum oxide (Al2O3) is prepared at a COC-endurable low temperature (approximately 120 degrees C) by using atomic layer deposition and micropatterning for the electrode contacts. The fabricated microdevice for heating and temperature sensing shows improved performance of thermal isolation, and microelectrodes display good electrochemical performances for electrochemical sensors. Thus, this novel 5-in. wafer-level microfabrication method is a simple and cost-effective protocol to prepare polymer substrate and demonstrates good potential for application to highly integrated and miniaturized biomedical devices.

Investigation of Various Surface Acoustic Wave Design Configurations for Improved Sensitivity

NASA Astrophysics Data System (ADS)

Manohar, Greeshma

Surface acoustic wave sensors have been a focus of active research for many years. Its ability to respond for surface perturbation is a basic principle for its sensing capability. Sensitivity to surface perturbation changes with every inter-digital transducer (IDT) design parameters, substrate selection, metallization choice and technique, delay line length and working environment. In this thesis, surface acoustic wave (SAW) sensors are designed and characterized to improve sensitivity and reduce loss. To quantify the improvements with a specific design configuration, the sensors are employed to measure temperature. Four SAW sensors design configurations, namely bi-directional, split electrode, single phase unidirectional transducer (SPUDT) and metal grating on delay line (shear transvers wave sensors) are designed and then fabricated in Nanotechnology Research and Education Center (NREC) facility using traditional MEMS fabrication processes Additionally, sensors are then coated with guiding layer SU8-2035 of 40µm using spin coating and SiO 2 of 6µm using plasma enhanced chemical vapor deposition (PECVD) process. Sensors are later diced and tested for every 5°C increment using network analyzer for temperature ranging from 30°C±0.5°C to 80°C±0.5°C. Data acquired from network analyzer is analyzed using plot of logarithmic magnitude, phase and frequency shift. Furthermore, to investigate the effect of metallization technique on the sensor performance, sensors are also fabricated on substrates that were metallized at a commercial MEMS foundry. All in-house and outside sputtered sensor configurations are compared to investigate quality of sputtered metal on wafer. One with better quality sputtered metal is chosen for further study. Later sensors coated with SU8 and SiO2 as guiding layer are compared to investigate effect of each waveguide on sensors and determine which waveguide offers better performance. The results showed that company sputtered sensors have higher sensitivity compared to in-house sputtered wafers. Furthermore after comparing SU8 and SiO2 coated sensors in the same instrumental and environmental condition, it was observed that SU8 coated di-directional and single phase unidirectional transducer (SPUDT) sensors showed best response.

Damage Assessment of Structures an Air Force Office of Scientific Research Structural Mechanics Perspective

DTIC Science & Technology

2007-07-01

air turbulence and structural vibration , etc. Flexible load- bearing skins and reconfigurable support structures for smart and adaptive morphing...phenomena for flapping-wing micro air vehicles, the prevention and control of nonlinear and aeroelastic phenomena, energy harvesting from environmental...Embedded Ultrasonic NDE is a research project aimed at studying the Lamb wave interaction between piezoelectric wafer active sensors (PWAS) and the host

Disbond detection with piezoelectric wafer active sensors in RC structures strengthened with FRP composite overlays

NASA Astrophysics Data System (ADS)

Giurgiutiu, Victor; Harries, Kent; Petrou, Michael; Bost, Joel; Quattlebaum, Josh B.

2003-12-01

The capability of embedded piezoelectric wafer active sensors (PWAS) to perform in-situ nondestructive evaluation (NDE) for structural health monitoring (SHM) of reinforced concrete (RC) structures strengthened with fiber reinforced polymer (FRP) composite overlays is explored. First, the disbond detection method were developed on coupon specimens consisting of concrete blocks covered with an FRP composite layer. It was found that the presence of a disbond crack drastically changes the electromechanical (E/M) impedance spectrum measured at the PWAS terminals. The spectral changes depend on the distance between the PWAS and the crack tip. Second, large scale experiments were conducted on a RC beam strengthened with carbon fiber reinforced polymer (CFRP) composite overlay. The beam was subject to an accelerated fatigue load regime in a three-point bending configuration up to a total of 807,415 cycles. During these fatigue tests, the CFRP overlay experienced disbonding beginning at about 500,000 cycles. The PWAS were able to detect the disbonding before it could be reliably seen by visual inspection. Good correlation between the PWAS readings and the position and extent of disbond damage was observed. These preliminary results demonstrate the potential of PWAS technology for SHM of RC structures strengthened with FRP composite overlays.

Output blue light evaluation for phosphor based smart white LED wafer level packages.

PubMed

Kolahdouz, Zahra; Rostamian, Ali; Kolahdouz, Mohammadreza; Ma, Teng; van Zeijl, Henk; Zhang, Kouchi

2016-02-22

This study presents a blue light detector for evaluating the output light of phosphor based white LED package. It is composed of a silicon stripe-shaped photodiode designed and implemented in a 2 μm BiCMOS process which can be used for wafer level integration of different passive and active devices all in just 5 lithography steps. The final device shows a high selectivity to blue light. The maximum responsivity at 480 nm is matched with the target blue LED illumination. The designed structure have better responsivity compared to simple photodiode structure due to reducing the effect of dead layer formation close to the surface because of implantation. It has also a two-fold increase in the responsivity and quantum efficiency compared to previously similar published sensors.

Monolithically integrated tri-axis shock accelerometers with MHz-level high resonant-frequency

NASA Astrophysics Data System (ADS)

Zou, Hongshuo; Wang, Jiachou; Chen, Fang; Bao, Haifei; Jiao, Ding; Zhang, Kun; Song, Zhaohui; Li, Xinxin

2017-07-01

This paper reports a novel monolithically integrated tri-axis high-shock accelerometer with high resonant-frequency for the detection of a broad frequency-band shock signal. For the first time, a resonant-frequency as high as about 1.4 MHz is designed for all the x-, y- and z-axis accelerometers of the integrated tri-axis sensor. In order to achieve a wide frequency-band detection performance, all the three sensing structures are designed into an axially compressed/stretched tiny-beam sensing scheme, where the p  +  -doped tiny-beams are connected into a Wheatstone bridge for piezoresistive output. By using ordinary (1 1 1) silicon wafer (i.e. non-SOI wafer), a single-wafer based fabrication technique is developed to monolithically integrate the three sensing structures for the tri-axis sensor. Testing results under high-shock acceleration show that each of the integrated three-axis accelerometers exhibit about 1.4 MHz resonant-frequency and 0.2-0.4 µV/V/g sensitivity. The achieved high frequencies for all the three sensing units make the tri-axis sensor promising in high fidelity 3D high-shock detection applications.

Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

NASA Astrophysics Data System (ADS)

Nguyen, M. D.; Tiggelaar, R.; Aukes, T.; Rijnders, G.; Roelof, G.

2017-11-01

Piezoelectric lead-zirconate-titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

Stylus type MEMS texture sensor covered with corrugated diaphragm

NASA Astrophysics Data System (ADS)

Tsukamoto, Takashiro; Asao, Hideaki; Tanaka, Shuji

2017-09-01

In this paper, a stylus type MEMS texture sensor covered with a corrugated palylene diaphragm, which prevent debris from jamming into the sensor without significant degradation of sensitivity and bandwidth, was reported. A new fabrication process using a lost-foil method to make the corrugated diaphragm on a 3-axis piezoresistive force sensor at wafer level has been developed. The texture sensor could detect the surface microstructure as small as about 10 \

Reducing the substrate dependent scanner leveling effect in low-k1 contact printing

NASA Astrophysics Data System (ADS)

Chang, C. S.; Tseng, C. F.; Huang, C. H.; Yang, Elvis; Yang, T. H.; Chen, K. C.

2015-03-01

As the scaling down of design rule for high-density memory device, the small depth of focus (DoF) budget may be deteriorated by focus leveling errors, which arises in unpredicted reflectivity from multilayer structures on the topographic wafer. The leveling sensors of ASML scanner use near infrared (NIR) range wavelength which can penetrate through most of films using in semiconductor fabrication such as photo-resist, bottom anti reflective coating (BARC) and dielectric materials. Consequently, the reflected light from underlying substructures would disturb leveling sensors from accurate leveling. The different pattern densities and layout characteristics between array and periphery of a memory chip are expected to result in different leveling signals. Furthermore, the process dependent variations between wafer central and edge areas are also considered to yield different leveling performances during wafer exposure. In this study, lower blind contact immunity was observed for peripheral contacts comparing to the array contacts especially around wafer edge region. In order to overcome this problem, a series of investigations have been carried out. The wafer edge leveling optimization through circuit dependent focus edge clearance (CDFEC) option doesn't get improvement. Air gauge improved process leveling (AGILE) function of ASML immersion scanner doesn't show improved result either. The ILD uniformity improvement and step height treatments around wafer edge such as edge exclusion of film deposition and bevel etching are also ineffective to mitigate the blind contact problem of peripheral patterns. Altering the etch hard-mask stack is finally found to be an effective approach to alleviate the issue. For instance, through either containing high temperature deposition advanced patterning film (APF) in the hard-mask or inserting higher opaque film such as amorphous Si in between the hard-mask stack.

Mechanism of room temperature oxygen sensor based on nanocrystalline TiO2 film

NASA Astrophysics Data System (ADS)

Bakri, A. S.; Sahdan, M. Z.; Nafarizal, N.; Abdullah, S. A.; Said, N. D. M.; Raship, N. A.; Sari, Y.

2018-04-01

A titanium dioxide (TiO2) thin film is proposed as the active layer for the detection of oxygen gas. The sensor is fabricated on silicon wafer using sol-gel dip coating technique with a constant withdrawal speed. The field emission scanning electron microscope image reveals that the film has a uniform structure while the x-ray diffraction analysis indicates that the film is anatase phase with tetragonal lattice structure. The film exhibit the highest intensity peak at (101) plane. The surface roughness measurement shows that the film has low surface roughness with small grain size. The electrical studies revealed that the resistivity is about 4.02 x 10-3 Ω.cm and the thickness of TiO2 film is 127.44 nm. The gas sensor measurement showed that the sensor response of the film is about 4.21% at room temperature.

Optical processing furnace with quartz muffle and diffuser plate

DOEpatents

Sopori, B.L.

1996-11-19

An optical furnace for annealing a process wafer is disclosed comprising a source of optical energy, a quartz muffle having a door to hold the wafer for processing, and a quartz diffuser plate to diffuse the light impinging on the quartz muffle; a feedback system with a light sensor located in the wall of the muffle is also provided for controlling the source of optical energy. 5 figs.

A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S., E-mail: shailesh.sharma6@mail.dcu.ie; National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9; Gahan, D., E-mail: david.gahan@impedans.com

2014-04-15

A novel retarding field energy analyzer design capable of measuring the spatial uniformity of the ion energy and ion flux across the surface of a semiconductor wafer is presented. The design consists of 13 individual, compact-sized, analyzers, all of which are multiplexed and controlled by a single acquisition unit. The analyzers were tested to have less than 2% variability from unit to unit due to tight manufacturing tolerances. The main sensor assembly consists of a 300 mm disk to mimic a semiconductor wafer and the plasma sampling orifices of each sensor are flush with disk surface. This device is placedmore » directly on top of the rf biased electrode, at the wafer location, in an industrial capacitively coupled plasma reactor without the need for any modification to the electrode structure. The ion energy distribution, average ion energy, and average ion flux were measured at the 13 locations over the surface of the powered electrode to determine the degree of spatial nonuniformity. The ion energy and ion flux are shown to vary by approximately 20% and 5%, respectively, across the surface of the electrode for the range of conditions investigated in this study.« less

Tip/tilt-compensated through-focus scanning optical microscopy

NASA Astrophysics Data System (ADS)

Lee, Jun Ho; Park, Jun Hyung; Jeong, Dohwan; Shin, Eun Ji; Park, Chris

2016-11-01

Through-Focus Optical Microscopy (TSOM), with nanometer scale lateral and vertical sensitivity matching those of scanning electron microscopy, has been demonstrated to be utilized for 3D inspection and metrology. There have been sensitivity and instability issues in acquiring through-focus images because TSOM 3D information is indirectly extracted by differentiating a target TSOM image from reference TSOM images. This paper first reports on the optical axis instability that occurs during the scanning process of TSOM when implemented in an existing patterned wafer inspection tool by moving the wafer plane; this is followed by quantitative confirmation of the optical/mechanical instability using a new TSOM tool on an optical bench with a Shack-Hartmann wavefront sensor and a tip/tilt sensor. Then, this paper proposes two tip/tilt compensated TSOM optical acquisition methods that can be applied with adaptive optics. The first method simply adopts a tip/tilt mirror with a quad cell in a simple closed loop, while the second method adopts a highorder deformable mirror with a Shack-Hartmann sensor. The second method is able to correct high-order residual aberrations as well as to perform through-focus scanning without z-axis movement, while the first method is easier to implement in pre-existing wafer inspection systems with only minor modification.

Micro-patterning and characterization of PHEMA-co-PAM-based optical chemical sensors for lab-on-a-chip applications.

PubMed

Zhu, Haixin; Zhou, Xianfeng; Su, Fengyu; Tian, Yanqing; Ashili, Shashanka; Holl, Mark R; Meldrum, Deirdre R

2012-10-01

We report a novel method for wafer level, high throughput optical chemical sensor patterning, with precise control of the sensor volume and capability of producing arbitrary microscale patterns. Monomeric oxygen (O(2)) and pH optical probes were polymerized with 2-hydroxyethyl methacrylate (HEMA) and acrylamide (AM) to form spin-coatable and further crosslinkable polymers. A micro-patterning method based on micro-fabrication techniques (photolithography, wet chemical process and reactive ion etch) was developed to miniaturize the sensor film onto glass substrates in arbitrary sizes and shapes. The sensitivity of fabricated micro-patterns was characterized under various oxygen concentrations and pH values. The process for spatially integration of two sensors (Oxygen and pH) on the same substrate surface was also developed, and preliminary fabrication and characterization results were presented. To the best of our knowledge, it is the first time that poly (2-hydroxylethyl methacrylate)-co-poly (acrylamide) (PHEMA-co-PAM)-based sensors had been patterned and integrated at the wafer level with micron scale precision control using microfabrication techniques. The developed methods can provide a feasible way to miniaturize and integrate the optical chemical sensor system and can be applied to any lab-on-a-chip system, especially the biological micro-systems requiring optical sensing of single or multiple analytes.

Fabrication of highly sensitive and selective H₂ gas sensor based on SnO₂ thin film sensitized with microsized Pd islands.

PubMed

Nguyen, Van Toan; Nguyen, Viet Chien; Nguyen, Van Duy; Hoang, Si Hong; Hugo, Nguyen; Nguyen, Duc Hoa; Nguyen, Van Hieu

2016-01-15

Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H2 sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO2 thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO2 thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25-250 ppm, with a linear dependence to H2 concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H2 among other gases, such as CO, NH3, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms. Copyright © 2015 Elsevier B.V. All rights reserved.

JPRS Report Science & Technology Japan

DTIC Science & Technology

1989-06-02

Electronics •Superconducting Wiring in LSI •One Wafer Computer •Josephson Devices •SQUID Devices Infrared Sensor Magnetic Sensor •Superconducting...Guinier- de Wolff monochromatic focusing camera (CoK* radiation) and with Philips APD-10 auto-powder diffractometer (CuKÄ radiation). Pure Si was used as...crystallized and smooth surface. The values indicated in Fig. 2 were the thickness monitored by a quartz oscillating sensor located near the

Sensors for the CMS Forward Pixel Phase 1 Upgrade

NASA Astrophysics Data System (ADS)

Dilsiz, Kamuran; CMS Collaboration

2016-03-01

The next incarnation of the CMS forward pixel detector, to be installed during the year end extended technical stop 2016-17, will need to survive an integrated luminosity of 300 fb-1 with the inner radius of the active region of the disks decreasing from 6 to 4.5 cm. Based on the Run 1 experience and irradiation studies, the Phase 1 FPIX sensors will again be n-on-n DOFZ silicon, with parameters similar to those in the present run. We will review the design choices including a study during the prototyping phase to explore different p-stop layouts. Results from the quality assurance probing of the full production of sensor wafers will be described. The IV measurements are particularly impressive with current densities in range of 3-4 nA/cm2 at the full depletion voltage.

Inspection of Piezoceramic Transducers Used for Structural Health Monitoring

PubMed Central

Mueller, Inka; Fritzen, Claus-Peter

2017-01-01

The use of piezoelectric wafer active sensors (PWAS) for structural health monitoring (SHM) purposes is state of the art for acousto-ultrasonic-based methods. For system reliability, detailed information about the PWAS itself is necessary. This paper gives an overview on frequent PWAS faults and presents the effects of these faults on the wave propagation, used for active acousto-ultrasonics-based SHM. The analysis of the wave field is based on velocity measurements using a laser Doppler vibrometer (LDV). New and established methods of PWAS inspection are explained in detail, listing advantages and disadvantages. The electro-mechanical impedance spectrum as basis for these methods is discussed for different sensor faults. This way this contribution focuses on a detailed analysis of PWAS and the need of their inspection for an increased reliability of SHM systems. PMID:28772431

Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

NASA Astrophysics Data System (ADS)

Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

2002-02-01

We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

NASA Astrophysics Data System (ADS)

Kremastiotis, I.

2017-12-01

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128×128 square pixels with 25μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (~20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ~20 ns for a power consumption of 5μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (~20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.

Quantitative Diagnostics of Multilayered Composite Structures with Ultrasonic Guided Waves

DTIC Science & Technology

2014-09-01

sensors. These IDT sensors were fabricated from thin wafer of piezoelectric lead zirconate titanate ( PZT ) substrates by using a pulse laser micro...pavement structures," J. Acoust. Soc. Am., vol. 116, no. 5, pp. 2902-2913, 2004. [9] E. Kostson and P. Fromme, " Fatigue crack growth monitoring in multi

MEMS fiber-optic Fabry-Perot pressure sensor for high temperature application

NASA Astrophysics Data System (ADS)

Fang, G. C.; Jia, P. G.; Cao, Q.; Xiong, J. J.

2016-10-01

We design and demonstrate a fiber-optic Fabry-Perot pressure sensor (FOFPPS) for high-temperature sensing by employing micro-electro-mechanical system (MEMS) technology. The FOFPPS is fabricated by anodically bonding the silicon wafer and the Pyrex glass together and fixing the facet of the optical fiber in parallel with the silicon surface by glass frit and organic adhesive. The silicon wafer can be reduced through dry etching technology to construct the sensitive diaphragm. The length of the cavity changes with the deformation of the diaphragm due to the loaded pressure, which leads to a wavelength shift of the interference spectrum. The pressure can be gauged by measuring the wavelength shift. The pressure experimental results show that the sensor has linear pressure sensitivities ranging from 0 kPa to 600 kPa at temperature range between 20°C to 300°C. The pressure sensitivity at 300°C is approximately 27.63 pm/kPa. The pressure sensitivities gradually decrease with increasing the temperature. The sensor also has a linear thermal drift when temperature changes from 20°C - 300°C.

Computational overlay metrology with adaptive data analytics

NASA Astrophysics Data System (ADS)

Schmitt-Weaver, Emil; Subramony, Venky; Ullah, Zakir; Matsunobu, Masazumi; Somasundaram, Ravin; Thomas, Joel; Zhang, Linmiao; Thul, Klaus; Bhattacharyya, Kaustuve; Goossens, Ronald; Lambregts, Cees; Tel, Wim; de Ruiter, Chris

2017-03-01

With photolithography as the fundamental patterning step in the modern nanofabrication process, every wafer within a semiconductor fab will pass through a lithographic apparatus multiple times. With more than 20,000 sensors producing more than 700GB of data per day across multiple subsystems, the combination of a light source and lithographic apparatus provide a massive amount of information for data analytics. This paper outlines how data analysis tools and techniques that extend insight into data that traditionally had been considered unmanageably large, known as adaptive analytics, can be used to show how data collected before the wafer is exposed can be used to detect small process dependent wafer-towafer changes in overlay.

Disc resonator gyroscope fabrication process requiring no bonding alignment

NASA Technical Reports Server (NTRS)

Shcheglov, Kirill V. (Inventor)

2010-01-01

A method of fabricating a resonant vibratory sensor, such as a disc resonator gyro. A silicon baseplate wafer for a disc resonator gyro is provided with one or more locating marks. The disc resonator gyro is fabricated by bonding a blank resonator wafer, such as an SOI wafer, to the fabricated baseplate, and fabricating the resonator structure according to a pattern based at least in part upon the location of the at least one locating mark of the fabricated baseplate. MEMS-based processing is used for the fabrication processing. In some embodiments, the locating mark is visualized using optical and/or infrared viewing methods. A disc resonator gyroscope manufactured according to these methods is described.

Very-large-area CCD image sensors: concept and cost-effective research

NASA Astrophysics Data System (ADS)

Bogaart, E. W.; Peters, I. M.; Kleimann, A. C.; Manoury, E. J. P.; Klaassens, W.; de Laat, W. T. F. M.; Draijer, C.; Frost, R.; Bosiers, J. T.

2009-01-01

A new-generation full-frame 36x48 mm2 48Mp CCD image sensor with vertical anti-blooming for professional digital still camera applications is developed by means of the so-called building block concept. The 48Mp devices are formed by stitching 1kx1k building blocks with 6.0 µm pixel pitch in 6x8 (hxv) format. This concept allows us to design four large-area (48Mp) and sixty-two basic (1Mp) devices per 6" wafer. The basic image sensor is relatively small in order to obtain data from many devices. Evaluation of the basic parameters such as the image pixel and on-chip amplifier provides us statistical data using a limited number of wafers. Whereas the large-area devices are evaluated for aspects typical to large-sensor operation and performance, such as the charge transport efficiency. Combined with the usability of multi-layer reticles, the sensor development is cost effective for prototyping. Optimisation of the sensor design and technology has resulted in a pixel charge capacity of 58 ke- and significantly reduced readout noise (12 electrons at 25 MHz pixel rate, after CDS). Hence, a dynamic range of 73 dB is obtained. Microlens and stack optimisation resulted in an excellent angular response that meets with the wide-angle photography demands.

Silicon wafer temperature monitoring using all-fiber laser ultrasonics

NASA Astrophysics Data System (ADS)

Alcoz, Jorge J.; Duffer, Charles E.

1998-03-01

Laser-ultrasonics is a very attractive technique for in-line process control in the semiconductor industry as it is compatible with the clean room environment and offers the capability to inspect parts at high-temperature. We describe measurements of the velocity of laser-generated Lamb waves in silicon wafers as a function of temperature using fiber- optic laser delivery and all-fiber interferometric sensing. Fundamental anti-symmetric Lamb-wave modes were generated in 5 inches < 111 > silicon wafers using a Nd:YAG laser coupled to a large-core multimode fiber. Generation was also performed using an array of sources created with a diffraction grating. For detection a compact fiber-optic sensor was used which is well suited for industrial environments as it is compact, rugged, stable, and low-cost. The wafers were heated up to 1000 degrees C and the temperature correlated with ultrasonic velocity measurements.

Micro-patterning and characterization of PHEMA-co-PAM-based optical chemical sensors for lab-on-a-chip applications

PubMed Central

Zhu, Haixin; Zhou, Xianfeng; Su, Fengyu; Tian, Yanqing; Ashili, Shashanka; Holl, Mark R.; Meldrum, Deirdre R.

2012-01-01

We report a novel method for wafer level, high throughput optical chemical sensor patterning, with precise control of the sensor volume and capability of producing arbitrary microscale patterns. Monomeric oxygen (O2) and pH optical probes were polymerized with 2-hydroxyethyl methacrylate (HEMA) and acrylamide (AM) to form spin-coatable and further crosslinkable polymers. A micro-patterning method based on micro-fabrication techniques (photolithography, wet chemical process and reactive ion etch) was developed to miniaturize the sensor film onto glass substrates in arbitrary sizes and shapes. The sensitivity of fabricated micro-patterns was characterized under various oxygen concentrations and pH values. The process for spatially integration of two sensors (Oxygen and pH) on the same substrate surface was also developed, and preliminary fabrication and characterization results were presented. To the best of our knowledge, it is the first time that poly (2-hydroxylethyl methacrylate)-co-poly (acrylamide) (PHEMA-co-PAM)-based sensors had been patterned and integrated at the wafer level with micron scale precision control using microfabrication techniques. The developed methods can provide a feasible way to miniaturize and integrate the optical chemical sensor system and can be applied to any lab-on-a-chip system, especially the biological micro-systems requiring optical sensing of single or multiple analytes. PMID:23175599

Ion microprobe elemental analyses of impact features on interplanetary dust experiment sensor surfaces

NASA Technical Reports Server (NTRS)

Simon, Charles G.; Hunter, Jerry L.; Wortman, Jim J.; Griffis, Dieter P.

1992-01-01

Hypervelocity impact features from very small particles (less than 3 microns in diameter) on several of the electro-active dust sensors used in the Interplanetary Dust Experiment (IDE) were subjected to elemental analysis using an ion microscope. The same analytical techniques were applied to impact and containment features on a set of ultra-pure, highly polished single crystal germanium wafer witness plates that were mounted on tray B12. Very little unambiguously identifiable impactor debris was found in the central craters or shatter zones of small impacts in this crystalline surface. The surface contamination, ubiquitous on the surface of the Long Duration Exposure Facility, has greatly complicated data collection and interpretation from microparticle impacts on all surfaces.

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

DOEpatents

Holland, Stephen Edward

2000-02-15

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels.

Predictive modeling of composite material degradation using piezoelectric wafer sensors electromechanical impedance spectroscopy

NASA Astrophysics Data System (ADS)

Gresil, Matthieu; Yu, Lingyu; Sutton, Mike; Guo, Siming; Pollock, Patrick

2012-04-01

The advancement of composite materials in aircraft structures has led to on increased need for effective structural health monitoring (SHM) technologies that are able to detect and assess damage present in composites structures. The work presented in this paper is interested in understanding using self-sensing piezoelectric wafer active sensors (PWAS) to conduct electromechanical impedance spectroscopy (EMIS) in glass fiber reinforced plastic (GFRP) to perform structures health monitoring. PWAS are bonded to the composite material and the EMIS method is used to analyze the changes in the structural resonance and anti-resonance. As the damage progresses in the specimen, the impedance spectrum will change. In addition, multi-physics based finite element method (MP-FEM) is used to model the electromechanical behavior of a free PWAS and its interaction with the host structure on which it is bonded. The MPFEM permits the input and the output variables to be expressed directly in electric terms while the two way electromechanical conversion is done internally in the MP_FEM formulation. To reach the goal of using the EMIS approach to detect damage, several damages models are generated on laminated GFRP structures. The effects of the modeling are carefully studied through experimental validation. A good match has been observed for low and very high frequencies.

50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

2015-12-07

Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  <1 mm(-1). In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (~1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

MAPS development for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Yang, P.; Aglieri, G.; Cavicchioli, C.; Chalmet, P. L.; Chanlek, N.; Collu, A.; Gao, C.; Hillemanns, H.; Junique, A.; Kofarago, M.; Keil, M.; Kugathasan, T.; Kim, D.; Kim, J.; Lattuca, A.; Marin Tobon, C. A.; Marras, D.; Mager, M.; Martinengo, P.; Mazza, G.; Mugnier, H.; Musa, L.; Puggioni, C.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Siddhanta, S.; Usai, G.; van Hoorne, J. W.; Yi, J.

2015-03-01

Monolithic Active Pixel Sensors (MAPS) offer the possibility to build pixel detectors and tracking layers with high spatial resolution and low material budget in commercial CMOS processes. Significant progress has been made in the field of MAPS in recent years, and they are now considered for the upgrades of the LHC experiments. This contribution will focus on MAPS detectors developed for the ALICE Inner Tracking System (ITS) upgrade and manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Several sensor chip prototypes have been developed and produced to optimise both charge collection and readout circuitry. The chips have been characterised using electrical measurements, radioactive sources and particle beams. The tests indicate that the sensors satisfy the ALICE requirements and first prototypes with the final size of 1.5 × 3 cm2 have been produced in the first half of 2014. This contribution summarises the characterisation measurements and presents first results from the full-scale chips.

Study on silver doped and undoped ZnO thin films working as capacitive sensor

NASA Astrophysics Data System (ADS)

Kiran, S.; Kumar, N. Santhosh; Kumar, S. K. Naveen

2013-06-01

Nanomaterials have been found to exhibit interesting properties like good conductivity, piezoelectricity, high band gap etc. among those metal oxide family, Zinc Oxide has become a material of interest among scientific community. In this paper, we present a method of fabricating capacitive sensors, in which Silver doped ZnO and pure ZnO nanoparticles act as active layer. For the synthesis of the nanoparticle, we followed biosynthesis method and wet chemical method for Ag and Ag doped ZnO nanoparticles respectively. Characterization has been done for both the particles. The XRD pattern taken for the Ag Doped ZnO nanoparticles confirmed the average size of the particles to be 15nm. AFM image of the sample is taken by doping on Silicon wafer. Also we have presented the results of CV characteristics and IV characteristics of the capacitive sensor.

Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickrell, Gary; Scott, Brian; Wang, Anbo

2013-12-31

This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, frommore » April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal gasifier facility in Terre Haute, Indiana. Due to business conditions at industrial partner and several logistical problems, this field test was not successful. An alternative high-temperature sensing system using sapphire wafer-based extrinsic Fabry-Perot interferometry was then developed as a significant improvement over the BPDI solution. From June 2006 to June 2008, three consecutive field tests were performed with the new sapphire wafer sensors at the TECO coal gasifier in Tampa, Florida. One of the sensors survived in the industrial coal gasifier for 7 months, over which time the existing thermocouples were replaced twice. The outcome of these TECO field tests suggests that the sapphire wafer sensor has very good potential to be commercialized. However packaging and sensor protection issues need additional development. During Phase III, several major improvements in the design and fabrication process of the sensor have been achieved through experiments and theoretical analysis. Studies on the property of the key components in the sensor head, including the sapphire fiber and sapphire wafer, were also conducted, for a better understanding of the sensor behavior. A final design based on all knowledge and experience has been developed, free of any issues encountered during the entire research. Sensors with this design performed well as expected in lab long-term tests, and were deployed in the sensing probe of the final coal-gasifier field test. Sensor packaging and protection was improved through materials engineering through testing of packaging designs in two blank probe packaging tests at Eastman Chemical in Kingsport, TN. Performance analysis of the blank probe packaging resulted in improve package designs culminating in a 3rd generation probe packaging utilized for the full field test of the sapphire optical sensor and materials designed sensor packaging.« less

Quantification of fatigue cracking in CT specimens with passive and active piezoelectric sensing

NASA Astrophysics Data System (ADS)

Yu, Jianguo; Ziehl, Paul; Zarate, Boris; Caicedo, Juan; Yu, Lingyu; Giurgiutiu, Victor; Metrovich, Brian; Matta, Fabio

2010-04-01

Monitoring of fatigue cracks in steel bridges is of interest to bridge owners and agencies. Monitoring of fatigue cracks has been attempted with acoustic emission using either resonant or broadband sensors. One drawback of passive sensing is that the data is limited to that caused by growing cracks. In this work, passive emission was complemented with active sensing (piezoelectric wafer active sensors) for enhanced detection capabilities. Passive and active sensing methods were described for fatigue crack monitoring on specialized compact tension specimens. The characteristics of acoustic emission were obtained to understand the correlation of acoustic emission behavior and crack growth. Crack and noise induced signals were interpreted through Swansong II Filter and waveform-based approaches, which are appropriate for data interpretation of field tests. Upon detection of crack extension, active sensing was activated to measure the crack size. Model updating techniques were employed to minimize the difference between the numerical results and experimental data. The long term objective of this research is to develop an in-service prognostic system to monitor structural health and to assess the remaining fatigue life.

Particulate contamination removal from wafers using plasmas and mechanical agitation

DOEpatents

Selwyn, G.S.

1998-12-15

Particulate contamination removal from wafers is disclosed using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer`s position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates. 4 figs.

Fabrication of a Silicon Backshort Assembly for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

Fabrication of Silicon Backshorts with Improved Out-of-Band Rejection for Waveguide-Coupled Superconducting Detectors

NASA Technical Reports Server (NTRS)

Crowe, Erik J.; Bennett, Charles L.; Chuss, David T.; Denis, Kevin L.; Eimer, Joseph; Lourie, Nathan; Marriage, Tobias; Moseley, Samuel H.; Rostem, Karwan; Stevenson, Thomas R.;

Porous Si nanowires for highly selective room-temperature NO2 gas sensing

NASA Astrophysics Data System (ADS)

Kwon, Yong Jung; Mirzaei, Ali; Gil Na, Han; Kang, Sung Yong; Choi, Myung Sik; Bang, Jae Hoon; Oum, Wansik; Kim, Sang Sub; Kim, Hyoun Woo

2018-07-01

We report the room-temperature sensing characteristics of Si nanowires (NWs) fabricated from p-Si wafers by a metal-assisted chemical etching method, which is a facile and low-cost method. X-ray diffraction was used to the the study crystallinity and phase formation of Si NWs, and product morphology was examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After confirmation of Si NW formation via the SEM and TEM micrographs, sensing tests were carried out at room temperature, and it was found that the Si NW sensor prepared from Si wafers with a resistivity of 0.001–0.003 Ω.cm had the highest response to NO2 gas (Rg/Ra = 1.86 for 50 ppm NO2), with a fast response (15 s) and recovery (30 s) time. Furthermore, the sensor responses to SO2, toluene, benzene, H2, and ethanol were nearly negligible, demonstrating the excellent selectivity to NO2 gas. The gas-sensing mechanism is discussed in detail. The present sensor can operate at room temperature, and is compatible with the microelectronic fabrication process, demonstrating its promise for next-generation Si-based electronics fused with functional chemical sensors.

Porous Si nanowires for highly selective room-temperature NO2 gas sensing.

PubMed

Kwon, Yong Jung; Mirzaei, Ali; Na, Han Gil; Kang, Sung Yong; Choi, Myung Sik; Bang, Jae Hoon; Oum, Wansik; Kim, Sang Sub; Kim, Hyoun Woo

2018-07-20

We report the room-temperature sensing characteristics of Si nanowires (NWs) fabricated from p-Si wafers by a metal-assisted chemical etching method, which is a facile and low-cost method. X-ray diffraction was used to the the study crystallinity and phase formation of Si NWs, and product morphology was examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After confirmation of Si NW formation via the SEM and TEM micrographs, sensing tests were carried out at room temperature, and it was found that the Si NW sensor prepared from Si wafers with a resistivity of 0.001-0.003 Ω.cm had the highest response to NO 2 gas (R g /R a  = 1.86 for 50 ppm NO 2 ), with a fast response (15 s) and recovery (30 s) time. Furthermore, the sensor responses to SO 2 , toluene, benzene, H 2 , and ethanol were nearly negligible, demonstrating the excellent selectivity to NO 2 gas. The gas-sensing mechanism is discussed in detail. The present sensor can operate at room temperature, and is compatible with the microelectronic fabrication process, demonstrating its promise for next-generation Si-based electronics fused with functional chemical sensors.

A Novel, High-Resolution, High-Speed Fiber-Optic Temperature Sensor for Oceanographic Applications

DTIC Science & Technology

2015-05-11

attached to the endface of a cleaved single-mode fiber using UV curable glue . A novel signal processing method has also been developed for the...thick Si wafer was bonded onto the tip of a single mode optical fiber using UV -curable glue . In addition to the sensor shown in Fig. 1(b), sensor...we developed a process to introduce much thicker silicon pieces onto the optical fiber tip. UV curable glue was first attached to the endface of

Sensors and Micromachined Devices for the Automotive and New Markets: The Delphi Delco Electronics MEMS Story.

NASA Astrophysics Data System (ADS)

Logsdon, James

2002-03-01

This presentation will provide a brief history of the development of MEMS products and technology, beginning with the manifold absolute pressure sensor in the late seventies through the current variety of Delphi Delco Electronics sensors available today. The technology development of micromachining from uncompensated P plus etch stops to deep reactive ion etching and the technology development of wafer level packaging from electrostatic bonding to glass frit sealing and silicon to silicon direct bonding will be reviewed.

Simple interrogator for optical fiber-based white light Fabry-Perot interferometers.

PubMed

Yu, Zhihao; Tian, Zhipeng; Wang, Anbo

2017-02-15

In this Letter, we present the design of a simple signal interrogator for optical fiber-based white light Fabry-Perot (F-P) interferometers. With the hardware being composed of only a flat fused silica wafer and a CCD camera, this interrogator translates the spectral interference into a spatial interference pattern, and then demodulates the F-P cavity length with the use of a relatively simple demodulation algorithm. The concept is demonstrated experimentally in a fiber optic sensor with a sapphire wafer as the F-P cavity.

Optical processing furnace with quartz muffle and diffuser plate

DOEpatents

Sopori, Bhushan L.

1995-01-01

An optical furnace for annealing a process wafer comprising a source of optical energy, a quartz muffle having a door to hold the wafer for processing, and a quartz diffuser plate to diffuse the light impinging on the quartz muffle; a feedback system with a light sensor located in the door or wall of the muffle is also provided for controlling the source of optical energy. The quartz for the diffuser plate is surface etched (to give the quartz diffusive qualities) in the furnace during a high intensity burn-in process.

Thermo-acousto-photonics for noncontact temperature measurement in silicon wafer processing

NASA Astrophysics Data System (ADS)

Suh, Chii-Der S.; Rabroker, G. Andrew; Chona, Ravinder; Burger, Christian P.

1999-10-01

A non-contact thermometry technique has been developed to characterize the thermal state of silicon wafers during rapid thermal processing. Information on thermal variations is obtained from the dispersion relations of the propagating waveguide mode excited in wafers using a non-contact, broadband optical system referred to as Thermal Acousto- Photonics for Non-Destructive Evaluation. Variations of thermo-mechanical properties in silicon wafers are correlated to temperature changes by performing simultaneous time-frequency analyses on Lamb waveforms acquired with a fiber-tip interferometer sensor. Experimental Lamb wave data collected for cases ranging from room temperature to 400 degrees C is presented. The results show that the temporal progressions of all spectral elements found in the fundamental antisymmetric mode are strong functions of temperature. This particular attribute is exploited to achieve a thermal resolution superior to the +/- 5 degrees C attainable through current pyrometric techniques. By analyzing the temperature-dependent group velocity of a specific frequency component over the temperature range considered and then comparing the results to an analytical model developed for silicon wafers undergoing annealing, excellent agreement was obtained. Presented results demonstrate the feasibility of applying laser-induced stress waves as a temperature diagnostic during rapid thermal processing.

Particulate contamination removal from wafers using plasmas and mechanical agitation

DOEpatents

Selwyn, Gary S.

1998-01-01

Particulate contamination removal from wafers using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer's position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates.

Whole Wafer Design and Fabrication for the Alignment of Nanostructures for Chemical Sensor Applications

NASA Technical Reports Server (NTRS)

Biaggi-Labiosa, Azlin M.; Hunter, Gary W.

2013-01-01

A major objective in aerospace sensor development is to produce sensors that are small in size, easy to batch fabricate and low in cost, and have low power consumption The fabrication of chemical sensors involving nanostructured materials can provide these properties as well as the potential for the development of sensor systems with unique properties and improved performance. However, the fabrication and processing of nanostructures for sensor applications currently is limited in the ability to control their location on the sensor. Currently, our group at NASA Glenn Research Center has demonstrated the controlled placement of nanostructures in sensors using a sawtooth patterned electrode design. With this design the nanostructures are aligned between opposing sawtooth electrodes by applying an alternating current.

A new approach to measure the temperature in rapid thermal processing

NASA Astrophysics Data System (ADS)

Yan, Jiang

This dissertation has presented the research work about a new method to measure the temperatures for the silicon wafer. The new technology is mainly for the rapid thermal processing (RTP) system. RTP is a promising technology in semiconductor manufacturing especially for the devices with minimum feature size less than 0.5 μm. The technique to measure the temperatures of the silicon wafer accurately is the key factor to apply the RTP technology to more critical processes in the manufacturing. Two methods which are mostly used nowadays, thermocouples and pyrometer, all have the limitation to be applied in the RTP. This is the motivation to study the new method using acoustic waves for the temperature measurement. The test system was designed and built up for the study of the acoustic method. The whole system mainly includes the transducer unit, circuit hardware, control software, the computer, and the chamber. The acoustic wave was generated by the PZT-5H transducer. The wave travels through the quartz rod into the silicon wafer. After traveling a certain distances in the wafer, the acoustic waves could be received by other transducers. By measuring the travel time and with the travel distance, the velocity of the acoustic wave traveling in the silicon wafer can be calculated. Because there is a relationship between the velocity and the temperature: the velocities of the acoustic waves traveling in the silicon wafer decrease as the temperatures of the wafer increase, the temperature of the wafer can be finally obtained. The thermocouples were used to check the measurement accuracy of the acoustic method. The temperature mapping across the 8″ silicon wafer was obtained with four transducer sensor unit. The temperatures of the wafer were measured using acoustic method at both static and dynamic status. The main purpose of the tests is to know the measurement accuracy for the new method. The goal of the research work regarding to the accuracy is <=+/-3°C. The measurement was also done under the different wafer conditions in order to clarify that the acoustic method is independent of the wafer conditions.

Signal processing techniques for damage detection with piezoelectric wafer active sensors and embedded ultrasonic structural radar

NASA Astrophysics Data System (ADS)

Yu, Lingyu; Bao, Jingjing; Giurgiutiu, Victor

2004-07-01

Embedded ultrasonic structural radar (EUSR) algorithm is developed for using piezoelectric wafer active sensor (PWAS) array to detect defects within a large area of a thin-plate specimen. Signal processing techniques are used to extract the time of flight of the wave packages, and thereby to determine the location of the defects with the EUSR algorithm. In our research, the transient tone-burst wave propagation signals are generated and collected by the embedded PWAS. Then, with signal processing, the frequency contents of the signals and the time of flight of individual frequencies are determined. This paper starts with an introduction of embedded ultrasonic structural radar algorithm. Then we will describe the signal processing methods used to extract the time of flight of the wave packages. The signal processing methods being used include the wavelet denoising, the cross correlation, and Hilbert transform. Though hardware device can provide averaging function to eliminate the noise coming from the signal collection process, wavelet denoising is included to ensure better signal quality for the application in real severe environment. For better recognition of time of flight, cross correlation method is used. Hilbert transform is applied to the signals after cross correlation in order to extract the envelope of the signals. Signal processing and EUSR are both implemented by developing a graphical user-friendly interface program in LabView. We conclude with a description of our vision for applying EUSR signal analysis to structural health monitoring and embedded nondestructive evaluation. To this end, we envisage an automatic damage detection application utilizing embedded PWAS, EUSR, and advanced signal processing.

Fabrication of terahertz metamaterials using electrohydrodynamic jet printing for sensitive detection of yeast

NASA Astrophysics Data System (ADS)

Pradhipta Tenggara, Ayodya; Park, S. J.; Teguh Yudistira, Hadi; Ahn, Y. H.; Byun, Doyoung

2017-03-01

We demonstrated the fabrication of terahertz metamaterial sensor for the accurate and on-site detection of yeast using electrohydrodynamic jet printing, which is inexpensive, simple, and environmentally friendly. The very small sized pattern up to 5 µm-width of electrical split ring resonator unit structures could be printed on a large area on both a rigid substrate and flexible substrate, i.e. silicon wafer and polyimide film using the drop on demand technique to eject liquid ink containing silver nanoparticles. Experimental characterization and simulation were performed to study their performances in detecting yeast of different weights. It was shown that the metamaterial sensor fabricated on a flexible polyimide film had higher sensitivity by more than six times than the metamaterial sensor fabricated on a silicon wafer, due to the low refractive index of the PI substrate and due to the extremely thin substrate thickness which lowers the effective index further. The resonance frequency shift saturated when the yeast weights were 145 µg and 215 µg for metamaterial structures with gap size 6.5 µm fabricated on the silicon substrate and on the polyimide substrate, respectively.

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

NASA Astrophysics Data System (ADS)

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

2018-01-01

Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

Eddy Current Testing for Detecting Small Defects in Thin Films

NASA Astrophysics Data System (ADS)

Obeid, Simon; Tranjan, Farid M.; Dogaru, Teodor

2007-03-01

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Coupled field modeling of E/M impedance of piezoelectric wafer active sensor for cataphoretic coating thickness measurement

NASA Astrophysics Data System (ADS)

Kamas, T.; Tekkalmaz, M.

2017-04-01

The cataphoretic electro-coating is one of the most common methods that are used against corrosion as a primary coating layer. The cataphoretic electro-coating is commonly utilized technique especially in protecting of automobile components in automotive industry. This coating method has many advantages such as high corrosion resistance, ability of homogeneous and complete coating of components in any geometry, less pollution, and less risk of ignition. In this study, some specimens in the form of steel sheets coated by the cataphoretic electro-coating method are examined using electro-mechanical impedance spectroscopy (EMIS) method. One of the extensively employed sensor technologies has been permanently installed piezoelectric wafer active sensor (PWAS) for in situ continuous structural health monitoring (SHM). Using the transduction of ultrasonic elastic waves into voltage and vice versa, PWAS has been emerged as one of the major SHM sensing technologies. EMIS method has been utilized as a dynamic descriptor of PWAS and the structure on which it is bonded. EMIS of PWAS-structure couple is a high frequency local modal sensing technique by applying standing waves to indicate the response of the PWAS resonator by determining the resonance and anti-resonance frequencies. To simulate the actual EMIS measurements in the present work, two-dimensional and three-dimensional coupled field finite element models are created for both uncoated and coated steel plates in a commercial FEA software, ANSYS®. The EMIS values of the specimens in certain sizes and coated in different thickness are going to be simulated in broad-band of frequency spectra. The thickness of the coating layer and coating time are of paramount importance for the corrosion resistance. The coating layer thickness and the corresponding coating period will be optimized by analyses of the values obtained from the 2D and 3D EMIS simulations.

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module

PubMed Central

Pandya, H. J.; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P.

2014-01-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400–1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen. PMID:24855449

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

PubMed

Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

2014-03-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

Materials Development for Auxiliary Components for Large Compact Mo/Au TES Arrays

NASA Technical Reports Server (NTRS)

Finkbeiner, F. m.; Chervenak, J. A.; Bandler, S. R.; Brekosky, R.; Brown, A. D.; Figueroa-Feliciano, E.; Iyomoto, N.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.;

Adaptive optics; Proceedings of the Meeting, Arlington, VA, April 10, 11, 1985

NASA Astrophysics Data System (ADS)

Ludman, J. E.

Papers are presented on the directed energy program for ballistic missile defense, a self-referencing wavefront interferometer for laser sources, the effects of mirror grating distortions on diffraction spots at wavefront sensors, and the optical design of an all-reflecting, high-resolution camera for active-optics on ground-based telescopes. Also considered are transverse coherence length observations, time dependent statistics of upper atmosphere optical turbulence, high altitude acoustic soundings, and the Cramer-Rao lower bound on wavefront sensor error. Other topics include wavefront reconstruction from noisy slope or difference data using the discrete Fourier transform, acoustooptic adaptive signal processing, the recording of phase deformations on a PLZT wafer for holographic and spatial light modulator applications, and an optical phase reconstructor using a multiplier-accumulator approach. Papers are also presented on an integrated optics wavefront measurement sensor, a new optical preprocessor for automatic vision systems, a model for predicting infrared atmospheric emission fluctuations, and optical logic gates and flip-flops based on polarization-bistable semiconductor lasers.

Tracking Efficiency And Charge Sharing of 3D Silicon Sensors at Different Angles in a 1.4T Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjersdal, H.; /Oslo U.; Bolle, E.

2012-05-07

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 {micro}m long pixel side, this resulting in a p-n inter-electrode distance of {approx} 71 {micro}m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, chargemore » sharing and tracking efficiency data were collected at zero and 15{sup o} angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.« less

Concurrent design of an RTP chamber and advanced control system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spence, P.; Schaper, C.; Kermani, A.

1995-12-31

A concurrent-engineering approach is applied to the development of an axisymmetric rapid-thermal-processing (RTP) reactor and its associated temperature controller. Using a detailed finite-element thermal model as a surrogate for actual hardware, the authors have developed and tested a multi-input multi-output (MIMO) controller. Closed-loop simulations are performed by linking the control algorithm with the finite-element code. Simulations show that good temperature uniformity is maintained on the wafer during both steady and transient conditions. A numerical study shows the effect of ramp rate, feedback gain, sensor placement, and wafer-emissivity patterns on system performance.

Design of Tactile Sensor Using Dynamic Wafer Technology Based on VLSI Technique

DTIC Science & Technology

2001-10-25

Charles Noback, Rober Carola," Human Anatomy and Physiology" third edition, 1995. [5] M.H. Raibert and John E. Tanner, "Design and Implementation of VLSI Tactile Sensing Computer" Robotics Research vol 1, 1983.

Design and fabrication of non silicon substrate based MEMS energy harvester for arbitrary surface applications

NASA Astrophysics Data System (ADS)

Balpande, Suresh S.; Pande, Rajesh S.

2016-04-01

Internet of Things (IoT) uses MEMS sensor nodes and actuators to sense and control objects through Internet. IOT deploys millions of chemical battery driven sensors at different locations which are not reliable many times because of frequent requirement of charging & battery replacement in case of underground laying, placement at harsh environmental conditions, huge count and difference between demand (24 % per year) and availability (energy density growing rate 8% per year). Energy harvester fabricated on silicon wafers have been widely used in manufacturing MEMS structures. These devices require complex fabrication processes, costly chemicals & clean room. In addition to this silicon wafer based devices are not suitable for curved surfaces like pipes, human bodies, organisms, or other arbitrary surface like clothes, structure surfaces which does not have flat and smooth surface always. Therefore, devices based on rigid silicon wafers are not suitable for these applications. Flexible structures are the key solution for this problems. Energy transduction mechanism generates power from free surrounding vibrations or impact. Sensor nodes application has been purposefully selected due to discrete power requirement at low duty cycle. Such nodes require an average power budget in the range of about 0.1 microwatt to 1 mW over a period of 3-5 seconds. Energy harvester is the best alternate source in contrast with battery for sensor node application. Novel design of Energy Harvester based on cheapest flexible non silicon substrate i.e. cellulose acetate substrate have been modeled, simulated and analyzed on COMSOL multiphysics and fabricated using sol-gel spin coating setup. Single cantilever based harvester generates 60-75 mV peak electric potential at 22Hz frequency and approximately 22 µW power at 1K-Ohm load. Cantilever array can be employed for generating higher voltage by replicating this structure. This work covers design, optimization, fabrication of harvester and schottky diodes based voltage multiplier.

Design and fabrication of non silicon substrate based MEMS energy harvester for arbitrary surface applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balpande, Suresh S., E-mail: balpandes@rknec.edu; Pande, Rajesh S.

Internet of Things (IoT) uses MEMS sensor nodes and actuators to sense and control objects through Internet. IOT deploys millions of chemical battery driven sensors at different locations which are not reliable many times because of frequent requirement of charging & battery replacement in case of underground laying, placement at harsh environmental conditions, huge count and difference between demand (24 % per year) and availability (energy density growing rate 8% per year). Energy harvester fabricated on silicon wafers have been widely used in manufacturing MEMS structures. These devices require complex fabrication processes, costly chemicals & clean room. In addition tomore » this silicon wafer based devices are not suitable for curved surfaces like pipes, human bodies, organisms, or other arbitrary surface like clothes, structure surfaces which does not have flat and smooth surface always. Therefore, devices based on rigid silicon wafers are not suitable for these applications. Flexible structures are the key solution for this problems. Energy transduction mechanism generates power from free surrounding vibrations or impact. Sensor nodes application has been purposefully selected due to discrete power requirement at low duty cycle. Such nodes require an average power budget in the range of about 0.1 microwatt to 1 mW over a period of 3-5 seconds. Energy harvester is the best alternate source in contrast with battery for sensor node application. Novel design of Energy Harvester based on cheapest flexible non silicon substrate i.e. cellulose acetate substrate have been modeled, simulated and analyzed on COMSOL multiphysics and fabricated using sol-gel spin coating setup. Single cantilever based harvester generates 60-75 mV peak electric potential at 22Hz frequency and approximately 22 µW power at 1K-Ohm load. Cantilever array can be employed for generating higher voltage by replicating this structure. This work covers design, optimization, fabrication of harvester and schottky diodes based voltage multiplier.« less

A mosaic infrared sensor for space astronomy, phase 3

NASA Technical Reports Server (NTRS)

Sood, A. K.

1985-01-01

Short wavelength (1 to 3 micron) HgCdTe mosaic detector arrays for space astronomy purposes were fabricated and studied. Honeywell will test and analyze these arrays at moderate temperatures (300-130K). Low temperature testing will be performed at the University of Hawaii. Short wavelength mosaic arrays were fabricated on three wafers and one array from each wafer was tested and analyzed. The p-type base carrier concentration on these wafers was an order of magnitude lower than typically used so far on this program (10 to the 14/cc as compared to 10 to the 15/cc). Tunneling currents are expected to decrease with this decrease in carrier concentration, resulting in improved performance at very low temperatures. The risk with such a low carrier concentration is that fixed charge in the surface passivating layer must be carefully controlled to prevent surface inversion layers.

A Two-Axis Direct Fluid Shear Stress Sensor

NASA Technical Reports Server (NTRS)

Adcock, Edward E.; Scott, Michael A.; Bajikar, Sateesh S.

2010-01-01

This innovation is a miniature or micro sized semiconductor sensor design that provides two axis direct non-intrusive measurement of skin friction or wall shear stress in fluid flow. The sensor is fabricated by micro-electro-mechanical system (MEMS) technology, enabling small size and low cost reproductions. The sensors have been fabricated by utilizing MEMS fabrication processes to bond a sensing element wafer to a fluid coupling wafer. This layering technique provides for an out of plane dimension that is on the same order of length as the inplane dimensions. The sensor design has the following characteristics: a shear force collecting plate with dimensions that can be tailored to various application specific requirements such as spatial resolution, temporal resolution and shear force range and resolution. This plate is located coplanar to both the sensor body and flow boundary, and is connected to a dual axis gimbal structure by a connecting column or lever arm. The dual axis gimbal structure has torsional hinges with embedded piezoresistive torsional strain gauges which provide a voltage output that is correlated to the applied shear stress (and excitation current) on force collection plate that is located on the flow boundary surface (hence the transduction method). This combination of design elements create a force concentration and resolution structure that enables the generation of a large stress on the strain gauge from the small shear stress on the flow boundary wall. This design as well as the use of back side electrical contacts establishes a non-intrusive method to quantitatively measure the shear force vector on aerodynamic bodies.

Design of an integrated aerial image sensor

NASA Astrophysics Data System (ADS)

Xue, Jing; Spanos, Costas J.

2005-05-01

The subject of this paper is a novel integrated aerial image sensor (IAIS) system suitable for integration within the surface of an autonomous test wafer. The IAIS could be used as a lithography processing monitor, affording a "wafer's eye view" of the process, and therefore facilitating advanced process control and diagnostics without integrating (and dedicating) the sensor to the processing equipment. The IAIS is composed of an aperture mask and an array of photo-detectors. In order to retrieve nanometer scale resolution of the aerial image with a practical photo-detector pixel size, we propose a design of an aperture mask involving a series of spatial phase "moving" aperture groups. We demonstrate a design example aimed at the 65nm technology node through TEMPEST simulation. The optimized, key design parameters include an aperture width in the range of 30nm, aperture thickness in the range of 70nm, and offer a spatial resolution of about 5nm, all with comfortable fabrication tolerances. Our preliminary simulation work indicates the possibility of the IAIS being applied to the immersion lithography. A bench-top far-field experiment verifies that our approach of the spatial frequency down-shift through forming large Moire patterns is feasible.

Superconductivity devices: Commercial use of space

NASA Technical Reports Server (NTRS)

Haertling, Gene; Furman, Eugene; Li, Guang

1995-01-01

The work described in this report covers various aspects of the Rainbow solid-state actuator technology. It is presented in six parts dealing with materials, processing, fabrication, properties and associated phenomena. The Rainbow actuator technology is a relatively new materials development which had its inception in 1992. It consists of a new processing technology for preparing piezoelectric and electrostrictive ceramic materials. It involves a high temperature chemical reduction process which leads to an internal pre-stressing of the oxide wafer, thus the name Rainbow, an acronym for Reduced And INternally Biased Oxide Wafer. Ceramics fabricated by this method produce bending-mode actuator devices which possess several times more displacement and load bearing capacity than present-day benders (unimorphs, bimorphs). It is anticipated that these solid-state, electromechanical actuators which can be used in a number of applications in space such as cryopump motors, anti-vibration active structures, autoleveling platforms, telescope mirror correctors and autofocusing devices. When considering any of these applications, the key to the development of a successful device is the successful development of a ceramic material which can produce maximum displacement per volt input; hence, this initiative involving a solid-state means for achieving unusually high electromechanical displacement can be significant and far reaching. An additional benefit obtained from employing the piezoelectric effect in these actuator devices is the ability to also utilize them as sensors; and, indeed, they can be used as both motor (actuator) and generator (sensor) in multifunction devices.

Improving Resonance Characteristics of Gas Sensors by Chemical Etching of Quartz Plates

NASA Astrophysics Data System (ADS)

Raicheva, Z.; Georgieva, V.; Grechnikov, A.; Gadjanova, V.; Angelov, Ts; Vergov, L.; Lazarov, Y.

2012-12-01

The paper presents the results of the influence of the etching process of AT-cut quartz plates on the resonance parameters and the QCM sensors. Quartz wafers (100 μm thick, with a diameter of 8 mm), divided into five groups, have been etched in [NH4]2 F2: H2O = 1:1 solution at temperatures in the range from 70°C to 90°C. The influence of etching temperature on the surface morphology of quartz wafers has been estimated by Atomic Force Microscopy (AFM). A correlation between the etching temperature and the dynamic characteristics is obtained. The optimal etching conditions for removing the surface damages caused by the mechanical treatment of the quartz wafers and for obtaining a clean surface were determined. The typical parameters of fabricated resonators on the quartz plates etched in the temperature range from 70°C to 90°C are as follows: Frequency, Fs 16 MHz ± 100 kHz Motional resistance, Rs less 10 Ω Motional inductance, Lq higher than 3 mH Motional capacitance, Cq less 30 fF Static capacitance, Co around 5 pF Quality factor, Q from 46 000 to 70 000 Sorption properties of QCM - MoO3 are evaluated at NH3 concentrations in the interval from 100 ppm to 500 ppm.

Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fong, Theodore E.

2013-05-06

The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technologymore » further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.« less

Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

2014-11-01

Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

Wafer level reliability testing: An idea whose time has come

NASA Technical Reports Server (NTRS)

Trapp, O. D.

1987-01-01

Wafer level reliability testing has been nurtured in the DARPA supported workshops, held each autumn since 1982. The seeds planted in 1982 have produced an active crop of very large scale integration manufacturers applying wafer level reliability test methods. Computer Aided Reliability (CAR) is a new seed being nurtured. Users are now being awakened by the huge economic value of the wafer reliability testing technology.

Structural health monitoring apparatus and methodology

NASA Technical Reports Server (NTRS)

Giurgiutiu, Victor (Inventor); Yu, Lingyu (Inventor); Bottai, Giola Santoni (Inventor)

2011-01-01

Disclosed is an apparatus and methodology for structural health monitoring (SHM) in which smart devices interrogate structural components to predict failure, expedite needed repairs, and thus increase the useful life of those components. Piezoelectric wafer active sensors (PWAS) are applied to or integrated with structural components and various data collected there from provide the ability to detect and locate cracking, corrosion, and disbanding through use of pitch-catch, pulse-echo, electro/mechanical impedance, and phased array technology. Stand alone hardware and an associated software program are provided that allow selection of multiple types of SHM investigations as well as multiple types of data analysis to perform a wholesome investigation of a structure.

AGILE integration into APC for high mix logic fab

NASA Astrophysics Data System (ADS)

Gatefait, M.; Lam, A.; Le Gratiet, B.; Mikolajczak, M.; Morin, V.; Chojnowski, N.; Kocsis, Z.; Smith, I.; Decaunes, J.; Ostrovsky, A.; Monget, C.

2015-09-01

For C040 technology and below, photolithographic depth of focus control and dispersion improvement is essential to secure product functionality. Critical 193nm immersion layers present initial focus process windows close to machine control capability. For previous technologies, the standard scanner sensor (Level sensor - LS) was used to map wafer topology and expose the wafer at the right Focus. Such optical embedded metrology, based on light reflection, suffers from reading issues that cannot be neglected anymore. Metrology errors are correlated to inspected product area for which material types and densities change, and so optical properties are not constant. Various optical phenomena occur across the product field during wafer inspection and have an effect on the quality and position of the reflected light. This can result in incorrect heights being recorded and exposures possibly being done out of focus. Focus inaccuracy associated to aggressive process windows on critical layers will directly impact product realization and therefore functionality and yield. ASML has introduced an air gauge sensor to complement the optical level sensor and lead to optimal topology metrology. The use of this new sensor is managed by the AGILE (Air Gauge Improved process LEveling) application. This measurement with no optical dependency will correct for optical inaccuracy of level sensor, and so improve best focus dispersion across the product. Due to the fact that stack complexity is more and more important through process steps flow, optical perturbation of standard Level sensor metrology is increasing and is becoming maximum for metallization layers. For these reasons AGILE feature implementation was first considered for contact and all metal layers. Another key point is that standard metrology will be sensitive to layer and reticle/product density. The gain of Agile will be enhanced for multiple product contribution mask and for complex System on Chip. Into ST context (High mix logic Fab) in term of product and technology portfolio AGILE corrects for up to 120nm of product topography error on process layer with less than 50nm depth of focus Based on tool functionalities delivered by ASML and on high volume manufacturing requirement, AGILE integration is a real challenge. Regarding ST requirements "Automatic AGILE" functionality developed by ASML was not a turnkey solution and a dedicated functionality was needed. A "ST homemade AGILE integration" has been fully developed and implemented within ASML and ST constraints. This paper describes this integration in our Advanced Process Control platform (APC).

Integration of Nanostructures into Microsensor Devices on Whole Wafers

NASA Technical Reports Server (NTRS)

Biaggi-Labiosa, Azlin M.; Evans, Laura J.; Berger, Gordon M.; Hunter, Gary W.

2015-01-01

Chemical sensors are used in a wide variety of applications, such as environmental monitoring, fire detection, emission monitoring, and health monitoring. The fabrication of chemical sensors involving nanostructured materials holds the potential for the development of sensor systems with unique properties and improved performance. However, the fabrication and processing of nanostructures for sensor applications currently are limited in the ability to control their location on the sensor, which in turn hinders the progress for batch fabrication. This report discusses the advantages of using nanomaterials in sensor designs, some of the challenges encountered with the integration of nanostructures into microsensor / devices, and then briefly describes different methods attempted by other groups to address this issue. Finally, this report will describe how our approach for the controlled alignment of nanostructures onto a sensor platform was applied to demonstrate an approach for the mass production of sensors with nanostructures.

Wafer-scale micro-optics fabrication

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard

2012-07-01

Micro-optics is an indispensable key enabling technology for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly-efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the past decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks, bringing high-speed internet to our homes. Even our modern smart phones contain a variety of micro-optical elements. For example, LED flash light shaping elements, the secondary camera, ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by the semiconductor industry. Thousands of components are fabricated in parallel on a wafer. This review paper recapitulates major steps and inventions in wafer-scale micro-optics technology. The state-of-the-art of fabrication, testing and packaging technology is summarized.

Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

NASA Technical Reports Server (NTRS)

Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.

1998-01-01

Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

NASA Astrophysics Data System (ADS)

Benschop, Jos; Engelen, Andre; Cramer, Hugo; Kubis, Michael; Hinnen, Paul; van der Laan, Hans; Bhattacharyya, Kaustuve; Mulkens, Jan

2013-04-01

The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast, precise and accurate in-line metrology sensor, capable to measure on product. The capabilities of the metrology sensor as well as the impact on overlay, CD and focus will be shared in this paper.

Implantable Wireless MEMS Sensors for Medical Uses

NASA Technical Reports Server (NTRS)

Chimbayo, Alexander

2006-01-01

Sensors designed and fabricated according to the principles of microelectromechanical systems (MEMS) are being developed for several medical applications in outer space and on Earth. The designs of these sensors are based on a core design family of pressure sensors, small enough to fit into the eye of a needle, that are fabricated by a "dissolved wafer" process. The sensors are expected to be implantable, batteryless, and wireless. They would be both powered and interrogated by hand-held radio transceivers from distances up to about 6 in. (about 15 cm). One type of sensor would be used to measure blood pressure, particularly for congestive heart failure. Another type would be used to monitor fluids in patients who have hydrocephalus (high brain pressure). Still other types would be used to detect errors in delivery of drugs and to help patients having congestive heart failure.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Room-temperature wafer bonding of LiNbO3 and SiO2 using a modified surface activated bonding method

NASA Astrophysics Data System (ADS)

Takigawa, Ryo; Higurashi, Eiji; Asano, Tanemasa

2018-06-01

In this paper, we report room-temperature bonding of LiNbO3 (LN) and SiO2/Si for the realization of a LN on insulator (LNOI)/Si hybrid wafer. We investigate the applicability of a modified surface activated bonding (SAB) method for the direct bonding of LN and a thermally grown SiO2 layer. The modified SAB method using ion beam bombardment demonstrates the room-temperature wafer bonding of LN and SiO2. The bonded wafer was successfully cut into 0.5 × 0.5 mm2 dies without interfacial debonding owing to the applied stress during dicing. In addition, the surface energy of the bonded wafer was estimated to be approximately 1.8 J/m2 using the crack opening method. These results indicate that a strong bond strength can be achieved, which may be sufficient for device applications.

Multivariable control of a rapid thermal processor using ultrasonic sensors

NASA Astrophysics Data System (ADS)

Dankoski, Paul C. P.

The semiconductor manufacturing industry faces the need for tighter control of thermal budget and process variations as circuit feature sizes decrease. Strategies to meet this need include supervisory control, run-to-run control, and real-time feedback control. Typically, the level of control chosen depends upon the actuation and sensing available. Rapid Thermal Processing (RTP) is one step of the manufacturing cycle requiring precise temperature control and hence real-time feedback control. At the outset of this research, the primary ingredient lacking from in-situ RTP temperature control was a suitable sensor. This research looks at an alternative to the traditional approach of pyrometry, which is limited by the unknown and possibly time-varying wafer emissivity. The technique is based upon the temperature dependence of the propagation time of an acoustic wave in the wafer. The aim of this thesis is to evaluate the ultrasonic sensors as a potentially viable sensor for control in RTP. To do this, an experimental implementation was developed at the Center for Integrated Systems. Because of the difficulty in applying a known temperature standard in an RTP environment, calibration to absolute temperature is nontrivial. Given reference propagation delays, multivariable model-based feedback control is applied to the system. The modelling and implementation details are described. The control techniques have been applied to a number of research processes including rapid thermal annealing and rapid thermal crystallization of thin silicon films on quartz/glass substrates.

Graphene-Si heterogeneous nanotechnology

NASA Astrophysics Data System (ADS)

Akinwande, Deji; Tao, Li

2013-05-01

It is widely envisioned that graphene, an atomic sheet of carbon that has generated very broad interest has the largest prospects for flexible smart systems and for integrated graphene-silicon (G-Si) heterogeneous very large-scale integrated (VLSI) nanoelectronics. In this work, we focus on the latter and elucidate the research progress that has been achieved for integration of graphene with Si-CMOS including: wafer-scale graphene growth by chemical vapor deposition on Cu/SiO2/Si substrates, wafer-scale graphene transfer that afforded the fabrication of over 10,000 devices, wafer-scalable mitigation strategies to restore graphene's device characteristics via fluoropolymer interaction, and demonstrations of graphene integrated with commercial Si- CMOS chips for hybrid nanoelectronics and sensors. Metrology at the wafer-scale has led to the development of custom Raman processing software (GRISP) now available on the nanohub portal. The metrology reveals that graphene grown on 4-in substrates have monolayer quality comparable to exfoliated flakes. At room temperature, the high-performance passivated graphene devices on SiO2/Si can afford average mobilities 3000cm2/V-s and gate modulation that exceeds an order of magnitude. The latest growth research has yielded graphene with high mobilities greater than 10,000cm2/V-s on oxidized silicon. Further progress requires track compatible graphene-Si integration via wafer bonding in order to translate graphene research from basic to applied research in commercial R and D laboratories to ultimately yield a viable nanotechnology.

Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor)

1994-01-01

The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD imager chip, acting as a spring holding the CCD imager chip in place.

A Ubiquitous Optical Microsystem Platform with Application to Optical Metrology and Chemical Sensing

NASA Astrophysics Data System (ADS)

Gerling, John David

This dissertation is concerned with the development of a novel, versatile optical sensor platform for optical metrology and chemical sensing. We demonstrate the feasibility of embedding optical components between bonded silicon wafers with receptor cavities and optical windows to create a self-contained sensor microsystem that can be used for in-situ measurement of hostile environments. Arrays of these sensors internal to a silicon wafer can enable optical sensing for in-situ, real-time mapping and process development for the semiconductor industry in the form of an instrumented substrate. Single-die versions of these optical sensor platforms can also enable point-of-care diagnostics, high throughput disease screening, bio-warfare agent detection, and environmental monitoring. Our first discussion will focus on a single-wavelength interferometry-based prototype sensor. Several applications are demonstrated using this single wavelength prototype: refractive index monitoring, SiO2 plasma etching, chemical mechanical polishing, photoresist cure and dissolution, copper etch end-point detection, and also nanopore wetting phenomena. Subsequent sections of this dissertation will describe efforts to improve the optical sensor platform to achieve multi-wavelength sensing function. We explore the use of an off-the-shelf commercial RGB sensor for colorimetric monitoring of copper and aluminum thin-film etchings. We then expand upon our prior work and concepts to realize a fully integrated, chip-sized microspectrometer with a photon engine based on a diffraction grating. The design, fabrication, and demonstration of a working prototype with dimensions < 1 mm thick using standard planar microfabrication techniques is described. Proof-of-concept demonstrations indicate the working principle of dispersion, although with a low spectral resolution of 120 nm. With working knowledge of the issues of the first prototype, we present an improved 5-channel microspectrometer with a spectral range 400-900 nm and demonstrate its ability for spectral identification with 3 different phosphor powder samples. Finally, we conclude with suggestions for future areas of research.

Electro-optical Probing Of Terahertz Integrated Circuits

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Romanofsky, R.; Whitaker, J. F.; Valdmanis, J. A.; Mourou, G.; Jackson, T. A.

1990-01-01

Electro-optical probe developed to perform noncontact, nondestructive, and relatively noninvasive measurements of electric fields over broad spectrum at millimeter and shorter wavelengths in integrated circuits. Manipulated with conventional intregrated-circuit-wafer-probing equipment and operated without any special preparation of integrated circuits. Tip of probe small electro-optical crystal serving as proximity electric-field sensor.

Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor

PubMed Central

TalebiFard, Sahba; Schmidt, Shon; Shi, Wei; Wu, WenXuan; Jaeger, Nicolas A. F.; Kwok, Ezra; Ratner, Daniel M.; Chrostowski, Lukas

2017-01-01

Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU. PMID:28270963

Miniature all-silica optical fiber pressure sensor with an ultrathin uniform diaphragm.

PubMed

Wang, Wenhui; Wu, Nan; Tian, Ye; Niezrecki, Christopher; Wang, Xingwei

2010-04-26

This paper presents an all-silica miniature optical fiber pressure/acoustic sensor based on the Fabry-Perot (FP) interferometric principle. The endface of the etched optical fiber tip and silica thin diaphragm on it form the FP structure. The uniform and thin silica diaphragm was fabricated by etching away the silicon substrate from a commercial silicon wafer that has a thermal oxide layer. The thin film was directly thermally bonded to the endface of the optical fiber thus creating the Fabry-Perot cavity. Thin films with a thickness from 1microm to 3microm have been bonded successfully. The sensor shows good linearity and hysteresis during measurement. A sensor with 0.75 microm-thick diaphragm thinned by post silica etching was demonstrated to have a sensitivity of 11 nm/kPa. The new sensor has great potential to be used as a non-intrusive pressure sensor in a variety of sensing applications.

Two-wavelength quadrature multipoint detection of partial discharge in power transformers using fiber Fabry-Perot acoustic sensors

NASA Astrophysics Data System (ADS)

Dong, Bo; Han, Ming; Wang, Anbo

2012-06-01

A reliable and low-cost two-wavelength quadrature interrogating method has been developed to demodulate optical signals from diaphragm-based Fabry-Perot interferometric fiber optic sensors for multipoint partial discharge detection in power transformers. Commercial available fused-silica parts (a wafer, a fiber ferrule, and a mating sleeve) and a cleaved optical single mode fiber were bonded together to form an extrinsic Fabry-Perot acoustic sensor. Two lasers with center wavelengths separated by a quarter of the period of sensor interference fringes were used to probe acousticwave- induced diaphragm vibration. A coarse wavelength-division multiplexing (CWDM) add/drop multiplexer was used to separate the reflected two wavelengths before two photo detectors. Optical couplers were used to distribute mixed laser light to each sensor-detector module for multiplexing purpose. Sensor structure, detection system design and experiment results are presented.

Detection of Ultrasonic Stress Waves in Structures Using 3D Shaped Optic Fiber Based on a Mach-Zehnder Interferometer.

PubMed

Lan, Chengming; Zhou, Wensong; Xie, Yawen

2018-04-16

This work proposes a 3D shaped optic fiber sensor for ultrasonic stress waves detection based on the principle of a Mach–Zehnder interferometer. This sensor can be used to receive acoustic emission signals in the passive damage detection methods and other types of ultrasonic signals propagating in the active damage detection methods, such as guided wave-based methods. The sensitivity of an ultrasonic fiber sensor based on the Mach–Zehnder interferometer mainly depends on the length of the sensing optical fiber; therefore, the proposed sensor achieves the maximum possible sensitivity by wrapping an optical fiber on a hollow cylinder with a base. The deformation of the optical fiber is produced by the displacement field of guided waves in the hollow cylinder. The sensor was first analyzed using the finite element method, which demonstrated its basic sensing capacity, and the simulation signals have the same characteristics in the frequency domain as the excitation signal. Subsequently, the primary investigations were conducted via a series of experiments. The sensor was used to detect guided wave signals excited by a piezoelectric wafer in an aluminum plate, and subsequently it was tested on a reinforced concrete beam, which produced acoustic emission signals via impact loading and crack extension when it was loaded to failure. The signals obtained from a piezoelectric acoustic emission sensor were used for comparison, and the results indicated that the proposed 3D fiber optic sensor can detect ultrasonic signals in the specific frequency response range.

Detection of Ultrasonic Stress Waves in Structures Using 3D Shaped Optic Fiber Based on a Mach–Zehnder Interferometer

PubMed Central

Xie, Yawen

2018-01-01

This work proposes a 3D shaped optic fiber sensor for ultrasonic stress waves detection based on the principle of a Mach–Zehnder interferometer. This sensor can be used to receive acoustic emission signals in the passive damage detection methods and other types of ultrasonic signals propagating in the active damage detection methods, such as guided wave-based methods. The sensitivity of an ultrasonic fiber sensor based on the Mach–Zehnder interferometer mainly depends on the length of the sensing optical fiber; therefore, the proposed sensor achieves the maximum possible sensitivity by wrapping an optical fiber on a hollow cylinder with a base. The deformation of the optical fiber is produced by the displacement field of guided waves in the hollow cylinder. The sensor was first analyzed using the finite element method, which demonstrated its basic sensing capacity, and the simulation signals have the same characteristics in the frequency domain as the excitation signal. Subsequently, the primary investigations were conducted via a series of experiments. The sensor was used to detect guided wave signals excited by a piezoelectric wafer in an aluminum plate, and subsequently it was tested on a reinforced concrete beam, which produced acoustic emission signals via impact loading and crack extension when it was loaded to failure. The signals obtained from a piezoelectric acoustic emission sensor were used for comparison, and the results indicated that the proposed 3D fiber optic sensor can detect ultrasonic signals in the specific frequency response range. PMID:29659540

Integrated Optical Interferometers with Micromachined Diaphragms for Pressure Sensing

NASA Technical Reports Server (NTRS)

DeBrabander, Gregory N.; Boyd, Joseph T.

1996-01-01

Optical pressure sensors have been fabricated which use an integrated optical channel waveguide that is part of an interferometer to measure the pressure-induced strain in a micromachined silicon diaphragm. A silicon substrate is etched from the back of the wafer leaving a rectangular diaphragm. On the opposite side of the wafer, ring resonator and Mach-Zehnder interferometers are formed with optical channel waveguides made from a low pressure chemical vapor deposited film of silicon oxynitride. The interferometer's phase is altered by pressure-induced stress in a channel segment positioned over the long edge of the diaphragm. The phase change in the ring resonator is monitored using a link-insensitive swept frequency laser diode, while in the Mach-Zehnder it is determined using a broad band super luminescent diode with subsequent wavelength separation. The ring resonator was found to be highly temperature sensitive, while the Mach-Zehnder, which had a smaller optical path length difference, was proportionally less so. The quasi-TM mode was more sensitive to pressure, in accord with calculations. Waveguide and sensor theory, sensitivity calculations, a fabrication sequence, and experimental results are presented.

Fabrication of Thin Film Heat Flux Sensors

NASA Technical Reports Server (NTRS)

Will, Herbert A.

1992-01-01

Prototype thin film heat flux sensors have been constructed and tested. The sensors can be applied to propulsion system materials and components. The sensors can provide steady state and fast transient heat flux information. Fabrication of the sensor does not require any matching of the mounting surface. Heat flux is proportional to the temperature difference across the upper and lower surfaces of an insulation material. The sensor consists of an array of thermocouples on the upper and lower surfaces of a thin insulating layer. The thermocouples for the sensor are connected in a thermopile arrangement. A 100 thermocouple pair heat flux sensor has been fabricated on silicon wafers. The sensor produced an output voltage of 200-400 microvolts when exposed to a hot air heat gun. A 20 element thermocouple pair heat flux sensor has been fabricated on aluminum oxide sheet. Thermocouples are Pt-Pt/Rh with silicon dioxide as the insulating material. This sensor produced an output of 28 microvolts when exposed to the radiation of a furnace operating at 1000 C. Work is also underway to put this type of heat flux sensor on metal surfaces.

Wafer-level micro-optics: trends in manufacturing, testing, packaging, and applications

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Gong, Li; Rieck, Juergen; Zheng, Alan

2012-11-01

Micro-optics is an indispensable key enabling technology (KET) for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the last decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks (supercomputer, ROADM), bringing high-speed internet to our homes (FTTH). Even our modern smart phones contain a variety of micro-optical elements. For example, LED flashlight shaping elements, the secondary camera, and ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by semiconductor industry. Thousands of components are fabricated in parallel on a wafer. We report on the state of the art in wafer-based manufacturing, testing, packaging and present examples and applications for micro-optical components and systems.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Bio-Inspired Stretchable Absolute Pressure Sensor Network

PubMed Central

Guo, Yue; Li, Yu-Hung; Guo, Zhiqiang; Kim, Kyunglok; Chang, Fu-Kuo; Wang, Shan X.

2016-01-01

A bio-inspired absolute pressure sensor network has been developed. Absolute pressure sensors, distributed on multiple silicon islands, are connected as a network by stretchable polyimide wires. This sensor network, made on a 4’’ wafer, has 77 nodes and can be mounted on various curved surfaces to cover an area up to 0.64 m × 0.64 m, which is 100 times larger than its original size. Due to Micro Electro-Mechanical system (MEMS) surface micromachining technology, ultrathin sensing nodes can be realized with thicknesses of less than 100 µm. Additionally, good linearity and high sensitivity (~14 mV/V/bar) have been achieved. Since the MEMS sensor process has also been well integrated with a flexible polymer substrate process, the entire sensor network can be fabricated in a time-efficient and cost-effective manner. Moreover, an accurate pressure contour can be obtained from the sensor network. Therefore, this absolute pressure sensor network holds significant promise for smart vehicle applications, especially for unmanned aerial vehicles. PMID:26729134

Development of N+ in P pixel sensors for a high-luminosity large hadron collider

NASA Astrophysics Data System (ADS)

Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

2014-11-01

Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

SOI CMOS Imager with Suppression of Cross-Talk

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

2009-01-01

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Summary Report of the Defense Sciences Research Council Summer Conference Held in La Jolla, California on July 6 - 31, 1992.

DTIC Science & Technology

1992-07-01

environments of high temperature or high electrical background noise . The sensitivity or speed of the sensor may not be adequate. The sensor signal may be...hard to interpret, or to deconvolve from background noise . These are all issues that must be addressed; however, at the present, there is still much...WAVELENGTH 3 (4 AND 8-101gM) QWIP DETECTOR I I i QW #2 WAFER MOW #1 Substrate THREE TERMINAL DEVICE I UNEAR RRA /Output Device #2Output Device #1 Sp

High-resolution and Fast-response Fiber-optic Temperature Sensor Using Silicon Fabry-Perot Cavity

DTIC Science & Technology

2015-03-23

silver diaphragm,” Opt. Lett. 37(9), 1505–1507 (2012). 18. I. M. White and X. D. Fan , “On the performance quantification of resonant refractive index...to the response time, the package of a FBG with a copper tube encapsulation can greatly reduce the response time of the sensor from several seconds...head shown in Fig. 1(b) are described in Fig. 2. The fabrication started with bonding a 200-µm-thick double-side-polished silicon wafer on top of

Fabricatable nanopore sensors with an atomic thickness

NASA Astrophysics Data System (ADS)

Luan, Binquan; Bai, Jingwei; Stolovitzky, Gustavo

2013-10-01

When analyzing biological molecules (such as DNA and proteins) transported through a nanopore sensor, the pore length limits both the sensitivity and the spatial resolution. Atomically thin as a graphene nanopore is, it is difficult to make graphene pores and the scalable-fabrication of those pores has not yet been possible. We theoretically studied a type of atomically thin nanopores that are formed by intersection of two perpendicular nano-slits. Based on theoretical analyses, we demonstrate that slit nanopores behave similarly to graphene pores and can be manufactured at a wafer scale.

High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer

NASA Astrophysics Data System (ADS)

Maruyama, Keisuke; Hanafusa, Hiroaki; Ashihara, Ryuhei; Hayashi, Shohei; Murakami, Hideki; Higashi, Seiichiro

2015-06-01

We have investigated high-temperature and rapid annealing of a silicon carbide (SiC) wafer by atmospheric pressure thermal plasma jet (TPJ) irradiation for impurity activation. To reduce the temperature gradient in the SiC wafer, a DC current preheating system and the lateral back-and-forth motion of the wafer were introduced. A maximum surface temperature of 1835 °C within 2.4 s without sample breakage was achieved, and aluminum (Al), phosphorus (P), and arsenic (As) activations in SiC were demonstrated. We have investigated precise control of heating rate (Rh) and cooling rate (Rc) during rapid annealing of P+-implanted 4H-SiC and its impact on impurity activation. No dependence of resistivity on Rh was observed, while increasing Rc significantly decreased resistivity. A minimum resistivity of 0.0025 Ω·cm and a maximum carrier concentration of 2.9 × 1020 cm-3 were obtained at Rc = 568 °C/s.

Study of radioactive impurities in neutron transmutation doped germanium

NASA Astrophysics Data System (ADS)

Mathimalar, S.; Dokania, N.; Singh, V.; Nanal, V.; Pillay, R. G.; Shrivastava, A.; Jagadeesan, K. C.; Thakare, S. V.

2015-02-01

A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at Bhabha Atomic Research Centre (BARC), Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of 65Zn, 110mAg and 182Ta impurities, which can be reduced by chemical etching of approximately 50 μm thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of 123Sb in bulk Ge is estimated to be 1 Bq / g after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cooldown period of 2 years would be necessary to reduce the radioactive background to ≤ 1 mBq / g.

Fabrication of a microfluidic chip by UV bonding at room temperature for integration of temperature-sensitive layers

NASA Astrophysics Data System (ADS)

Schlautmann, S.; Besselink, G. A. J.; Radhakrishna Prabhu, G.; Schasfoort, R. B. M.

2003-07-01

A method for the bonding of a microfluidic device at room temperature is presented. The wafer with the fluidic structures was bonded to a sensor wafer with gold pads by means of adhesive bonding, utilizing an UV-curable glue layer. To avoid filling the fluidic channels with the glue, a stamping process was developed which allows the selective application of a thin glue layer. In this way a microfluidic glass chip was fabricated that could be used for performing surface plasmon resonance measurements without signs of leakage. The advantage of this method is the possibility of integration of organic layers as well as other temperature-sensitive layers into a microfluidic glass device.

Three Axes MEMS Combined Sensor for Electronic Stability Control System

NASA Astrophysics Data System (ADS)

Jeong, Heewon; Goto, Yasushi; Aono, Takanori; Nakamura, Toshiaki; Hayashi, Masahide

A microelectromechanical systems (MEMS) combined sensor measuring two-axis accelerations and an angular rate (rotation) has been developed for an electronic stability control system of automobiles. With the recent trend to mount the combined sensors in the engine compartment, the operation temperature range increased drastically, with the request of immunity to environmental disturbances such as vibration. In this paper, we report the combined sensor which has a gyroscopic part and two acceleration parts in single die. A deformation-robust MEMS structure has been adopted to achieve stable operation under wide temperature range (-40 to 125°C) in the engine compartment. A package as small as 10 × 19 × 4 mm is achieved by adopting TSV (through silicon via) and WLP (wafer-level package) technologies with enough performance as automotive grade.

Piezoelectric wafer active sensors under gamma radiation exposure toward applications for structural health monitoring of nuclear dry cask storage systems

NASA Astrophysics Data System (ADS)

Faisal Haider, Mohammad; Mei, Hanfei; Lin, Bin; Yu, Lingyu; Giurgiutiu, Victor; Lam, Poh-Sang; Verst, Christopher

2018-03-01

Structural health monitoring (SHM) is in urgent need and must be integrated into the nuclear-spent fuel storage systems to guarantee the safe operation. The dry cask storage system (DCSS) is such storage facility, which is licensed for temporary storage for nuclear-spent fuel at the independent spent fuel storage installations (ISFSIs) for certain predetermined period of time. Gamma radiation is one of the major radiation sources near DCSS. Therefore, a detailed experimental investigation was completed on the gamma radiation endurance of piezoelectric wafer active sensors (PWAS) transducers for SHM applications to the DCSS system. The irradiation test was done in a Co-60 gamma irradiator. Lead Zirconate Titanate (PZT) and Gallium Orthophosphate (GaPO4) PWAS transducers were exposed to 40.7 kGy gamma radiation. Total radiation dose was achieved in two different radiation dose rates: (a) slower radiation rate at 0.1 kGy/hr for 20 hours (b) accelerated radiation rate at 1.233 kGy/hr for 32 hours. The total cumulative radiation dose of 40.7 kGy is equivalent to 45 years of operation in DCSS system. Electro-mechanical impedance and admittance (EMIA) signatures and electrical capacitance were measured to evaluate the PWAS performance after each gamma radiation exposure. The change in resonance frequency of PZT-PWAS transducer for both in-plane and thickness mode was observed. The GaPO4-PWAS EMIA spectra do not show a significant shift in resonance frequency after gamma irradiation exposure. Radiation endurance of new high-temperature HPZ-HiT PWAS transducer was also evaluated. The HPZ-HiT transducers were exposed to gamma radiation at 1.233 kGy/hr for 160 hours with 80 hours interval. Therefore, the total accumulated gamma radiation dose is 184 kGy. No significant change in impedance spectra was observed due to gamma radiation exposure.

Structural Damage Detection with Piezoelectric Wafer Active Sensors

NASA Astrophysics Data System (ADS)

Giurgiutiu, Victor

2011-07-01

Piezoelectric wafer active sensors (PWAS) are lightweight and inexpensive enablers for a large class of damage detection and structural health monitoring (SHM) applications. This paper starts with a brief review of PWAS physical principles and basic modelling and continues by considering the various ways in which PWAS can be used for damage detection: (a) embedded guided-wave ultrasonics, i.e., pitch-catch, pulse-echo, phased arrays, thickness mode; (b) high-frequency modal sensing, i.e., the electro-mechanical (E/M) impedance method; (c) passive detection, i.e., acoustic emission and impact detection. An example of crack-like damage detection and localization with PWAS phased arrays on a small metallic plate is given. The modelling of PWAS detection of disbond damage in adhesive joints is achieved with the analytical transfer matrix method (TMM). The analytical methods offer the advantage of fast computation which enables parameter studies and carpet plots. A parametric study of the effect of crack size and PWAS location on disbond detection is presented. The power and energy transduction between PWAS and structure is studied analytically with a wave propagation method. Special attention is given to the mechatronics modeling of the complete transduction cycle from electrical excitation into ultrasonic acoustic waves by the piezoelectric effect, the transfer through the structure, and finally reverse piezoelectric transduction to generate the received electric signal. It is found that the combination of PWAS size and wave frequency/wavelength play an important role in identifying transduction maxima and minima that could be exploited to achieve an optimum power-efficient design. The multi-physics finite element method (MP-FEM), which permits fine discretization of damaged regions and complicated structural geometries, is used to study the generation of guided waves in a plate from an electrically excited transmitter PWAS and the capture of these waves as electric signals at a receiver PWAS. Wave diffraction from a hole damage is illustrated through time-frame snapshots. The paper ends with conclusions and suggestions for further work.

Predictive simulation of guide-wave structural health monitoring

NASA Astrophysics Data System (ADS)

Giurgiutiu, Victor

2017-04-01

This paper presents an overview of recent developments on predictive simulation of guided wave structural health monitoring (SHM) with piezoelectric wafer active sensor (PWAS) transducers. The predictive simulation methodology is based on the hybrid global local (HGL) concept which allows fast analytical simulation in the undamaged global field and finite element method (FEM) simulation in the local field around and including the damage. The paper reviews the main results obtained in this area by researchers of the Laboratory for Active Materials and Smart Structures (LAMSS) at the University of South Carolina, USA. After thematic introduction and research motivation, the paper covers four main topics: (i) presentation of the HGL analysis; (ii) analytical simulation in 1D and 2D; (iii) scatter field generation; (iv) HGL examples. The paper ends with summary, discussion, and suggestions for future work.

Rapid Multi-Damage Identification for Health Monitoring of Laminated Composites Using Piezoelectric Wafer Sensor Arrays

PubMed Central

Si, Liang; Wang, Qian

2016-01-01

Through the use of the wave reflection from any damage in a structure, a Hilbert spectral analysis-based rapid multi-damage identification (HSA-RMDI) technique with piezoelectric wafer sensor arrays (PWSA) is developed to monitor and identify the presence, location and severity of damage in carbon fiber composite structures. The capability of the rapid multi-damage identification technique to extract and estimate hidden significant information from the collected data and to provide a high-resolution energy-time spectrum can be employed to successfully interpret the Lamb waves interactions with single/multiple damage. Nevertheless, to accomplish the precise positioning and effective quantification of multiple damage in a composite structure, two functional metrics from the RMDI technique are proposed and used in damage identification, which are the energy density metric and the energy time-phase shift metric. In the designed damage experimental tests, invisible damage to the naked eyes, especially delaminations, were detected in the leftward propagating waves as well as in the selected sensor responses, where the time-phase shift spectra could locate the multiple damage whereas the energy density spectra were used to quantify the multiple damage. The increasing damage was shown to follow a linear trend calculated by the RMDI technique. All damage cases considered showed completely the developed RMDI technique potential as an effective online damage inspection and assessment tool. PMID:27153070

Fabrication of plastic microparts on wafer level

NASA Astrophysics Data System (ADS)

Weber, Lutz; Ehrfeld, Wolfgang; Begemann, Marc; Berg, Udo; Michel, Frank

1999-08-01

In the recent years micromolding has become one of the most important key technologies of microengineering. At the current state of art, the mass fabrication of plastic microparts for a wide range of applications like telecommunications, sensors, medical technology and biochemistry is feasible. Here a micro motor, plastic optical waveguides, a micro pump, and nanotiterplates are presented.

High level gamma radiation effects on Cernox™ cryogenic temperature sensors

NASA Astrophysics Data System (ADS)

Courts, S. S.

2017-12-01

Cryogenic temperature sensors are used in high energy particle colliders to monitor the temperatures of superconducting magnets, superconducting RF cavities, and cryogen infrastructure. While not intentional, these components are irradiated by leakage radiation during operation of the collider. A common type of cryogenic thermometer used in these applications is the Cernox™ resistance thermometer (CxRT) manufactured by Lake Shore Cryotronics, Inc. This work examines the radiation-induced calibration offsets on CxRT models CX-1050-SD-HT and CX-1080-SD-HT resulting from exposure to very high levels of gamma radiation. Samples from two different wafers of each of the two models tested were subjected to a gamma radiation dose ranging from 10 kGy to 5 MGy. Data were analysed in terms of the temperature-equivalent resistance change between pre- and post-irradiation calibrations. The data show that the resistance of these devices decreased following irradiation resulting in positive temperature offsets across the 1.4 K to 330 K temperature range. Variations in response were observed between wafers of the same CxRT model. Overall, the offsets increased with increasing temperature and increasing gamma radiation dose. At 1.8 K, the average offset increased from 0 mK to +13 mK as total dose increased from 10 kGy to 5 MGy. At 4.2 K, the average offset increased from +4 mK to +33 mK as total dose increased from 10 kGy to 5 MGy. Equivalent temperature offset data are presented over the 1.4 K to 330 K temperature range by CxRT model, wafer, and total gamma dose.

First results on DEPFET Active Pixel Sensors fabricated in a CMOS foundry—a promising approach for new detector development and scientific instrumentation

NASA Astrophysics Data System (ADS)

Aschauer, S.; Majewski, P.; Lutz, G.; Soltau, H.; Holl, P.; Hartmann, R.; Schlosser, D.; Paschen, U.; Weyers, S.; Dreiner, S.; Klusmann, M.; Hauser, J.; Kalok, D.; Bechteler, A.; Heinzinger, K.; Porro, M.; Titze, B.; Strüder, L.

2017-11-01

DEPFET Active Pixel Sensors (APS) have been introduced as focal plane detectors for X-ray astronomy already in 1996. Fabricated on high resistivity, fully depleted silicon and back-illuminated they can provide high quantum efficiency and low noise operation even at very high read rates. In 2009 a new type of DEPFET APS, the DSSC (DEPFET Sensor with Signal Compression) was developed, which is dedicated to high-speed X-ray imaging at the European X-ray free electron laser facility (EuXFEL) in Hamburg. In order to resolve the enormous contrasts occurring in Free Electron Laser (FEL) experiments, this new DSSC-DEPFET sensor has the capability of nonlinear amplification, that is, high gain for low intensities in order to obtain single-photon detection capability, and reduced gain for high intensities to achieve high dynamic range for several thousand photons per pixel and frame. We call this property "signal compression". Starting in 2015, we have been fabricating DEPFET sensors in an industrial scale CMOS foundry maintaining the outstanding proven DEPFET properties and adding new capabilities due to the industrial-scale CMOS process. We will highlight these additional features and describe the progress achieved so far. In a first attempt on double-sided polished 725 μm thick 200 mm high resistivity float zone silicon wafers all relevant device related properties have been measured, such as leakage current, depletion voltage, transistor characteristics, noise and energy resolution for X-rays and the nonlinear response. The smaller feature size provided by the new technology allows for an advanced design and significant improvements in device performance. A brief summary of the present status will be given as well as an outlook on next steps and future perspectives.

Design Study of Wafer Seals for Future Hypersonic Vehicles

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H.; Finkbeiner, Joshua R.; Steinetz, Bruce M.; DeMange, Jeffrey J.

2005-01-01

Future hypersonic vehicles require high temperature, dynamic seals in advanced hypersonic engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Current seals do not meet the demanding requirements of these applications, so NASA Glenn Research Center is developing improved designs to overcome these shortfalls. An advanced ceramic wafer seal design has shown promise in meeting these needs. Results from a design of experiments study performed on this seal revealed that several installation variables played a role in determining the amount of leakage past the seals. Lower leakage rates were achieved by using a tighter groove width around the seals, a higher seal preload, a tighter wafer height tolerance, and a looser groove length. During flow testing, a seal activating pressure acting behind the wafers combined with simulated vibrations to seat the seals more effectively against the sealing surface and produce lower leakage rates. A seal geometry study revealed comparable leakage for full-scale wafers with 0.125 and 0.25 in. thicknesses. For applications in which lower part counts are desired, fewer 0.25-in.-thick wafers may be able to be used in place of 0.125-in.-thick wafers while achieving similar performance. Tests performed on wafers with a rounded edge (0.5 in. radius) in contact with the sealing surface resulted in flow rates twice as high as those for wafers with a flat edge. Half-size wafers had leakage rates approximately three times higher than those for full-size wafers.

A novel integrated multifunction micro-sensor for three-dimensional micro-force measurements.

PubMed

Wang, Weizhong; Zhao, Yulong; Qin, Yafei

2012-01-01

An integrated multifunction micro-sensor for three-dimensional micro-force precision measurement under different pressure and temperature conditions is introduced in this paper. The integrated sensor consists of three kinds of sensors: a three-dimensional micro-force sensor, an absolute pressure sensor and a temperature sensor. The integrated multifunction micro-sensor is fabricated on silicon wafers by micromachining technology. Different doping doses of boron ion, placement and structure of resistors are tested for the force sensor, pressure sensor and temperature sensor to minimize the cross interference and optimize the properties. A glass optical fiber, with a ladder structure and sharp tip etched by buffer oxide etch solution, is glued on the micro-force sensor chip as the tactile probe. Experimental results show that the minimum force that can be detected by the force sensor is 300 nN; the lateral sensitivity of the force sensor is 0.4582 mV/μN; the probe length is linearly proportional to sensitivity of the micro-force sensor in lateral; the sensitivity of the pressure sensor is 0.11 mv/KPa; the sensitivity of the temperature sensor is 5.836 × 10(-3) KΩ/°C. Thus it is a cost-effective method to fabricate integrated multifunction micro-sensors with different measurement ranges that could be used in many fields.

Epidermal electronics.

PubMed

Kim, Dae-Hyeong; Lu, Nanshu; Ma, Rui; Kim, Yun-Soung; Kim, Rak-Hwan; Wang, Shuodao; Wu, Jian; Won, Sang Min; Tao, Hu; Islam, Ahmad; Yu, Ki Jun; Kim, Tae-il; Chowdhury, Raeed; Ying, Ming; Xu, Lizhi; Li, Ming; Chung, Hyun-Joong; Keum, Hohyun; McCormick, Martin; Liu, Ping; Zhang, Yong-Wei; Omenetto, Fiorenzo G; Huang, Yonggang; Coleman, Todd; Rogers, John A

2011-08-12

We report classes of electronic systems that achieve thicknesses, effective elastic moduli, bending stiffnesses, and areal mass densities matched to the epidermis. Unlike traditional wafer-based technologies, laminating such devices onto the skin leads to conformal contact and adequate adhesion based on van der Waals interactions alone, in a manner that is mechanically invisible to the user. We describe systems incorporating electrophysiological, temperature, and strain sensors, as well as transistors, light-emitting diodes, photodetectors, radio frequency inductors, capacitors, oscillators, and rectifying diodes. Solar cells and wireless coils provide options for power supply. We used this type of technology to measure electrical activity produced by the heart, brain, and skeletal muscles and show that the resulting data contain sufficient information for an unusual type of computer game controller.

Epidermal Electronics

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeong; Lu, Nanshu; Ma, Rui; Kim, Yun-Soung; Kim, Rak-Hwan; Wang, Shuodao; Wu, Jian; Won, Sang Min; Tao, Hu; Islam, Ahmad; Yu, Ki Jun; Kim, Tae-il; Chowdhury, Raeed; Ying, Ming; Xu, Lizhi; Li, Ming; Chung, Hyun-Joong; Keum, Hohyun; McCormick, Martin; Liu, Ping; Zhang, Yong-Wei; Omenetto, Fiorenzo G.; Huang, Yonggang; Coleman, Todd; Rogers, John A.

2011-08-01

We report classes of electronic systems that achieve thicknesses, effective elastic moduli, bending stiffnesses, and areal mass densities matched to the epidermis. Unlike traditional wafer-based technologies, laminating such devices onto the skin leads to conformal contact and adequate adhesion based on van der Waals interactions alone, in a manner that is mechanically invisible to the user. We describe systems incorporating electrophysiological, temperature, and strain sensors, as well as transistors, light-emitting diodes, photodetectors, radio frequency inductors, capacitors, oscillators, and rectifying diodes. Solar cells and wireless coils provide options for power supply. We used this type of technology to measure electrical activity produced by the heart, brain, and skeletal muscles and show that the resulting data contain sufficient information for an unusual type of computer game controller.

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

Multi-functional micro electromechanical devices and method of bulk manufacturing same

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

Vertical and lateral heterogeneous integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Okuno, Yae L.; Bowers, John E.; Jayaraman, Vijay

2001-09-01

A technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures has been developed. The technique uses a single nonplanar direct-wafer-bond step to transform vertically integrated epitaxial structures into lateral epitaxial variation across the surface of a wafer. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Microscopy is used to verify the quality of the bonded interface, and photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices.

A low power, microvalve regulated architecture for drug delivery systems.

PubMed

Evans, Allan Thomas; Park, Jong M; Chiravuri, Srinivas; Gianchandani, Yogesh B

2010-02-01

This paper describes an actively-controlled architecture for drug delivery systems that offers high performance and volume efficiency through the use of micromachined components. The system uses a controlled valve to regulate dosing by throttling flow from a mechanically pressurized reservoir, thereby eliminating the need for a pump. To this end, the valve is fabricated from a glass wafer and silicon-on-insulator wafer for sensor integration. The valve draws a maximum power of 1.68 μW| (averaged over time); with the existing packaging scheme, it has a volume of 2.475 cm3. The reservoirs are assembled by compressing polyethylene terephthalate polymer balloons with metal springs. The metal springs are fabricated from Elgiloy® using photochemical etching. The springs pressurize the contents of 37 mLchambers up to 15 kPa. The system is integrated with batteries and a control circuit board within a 113 cm3 metal casing. This system has been evaluated in different control modes to mimic clinical applications. Bolus deliveries of1.5 mL have been regulated as well as continuous flows of 0.15 mL/day with accuracies of 3.22%. The results suggest that this device can be used in an implant to regulate intrathecal drug delivery

Modeling and testing of fast response, fiber-optic temperature sensors

NASA Astrophysics Data System (ADS)

Tonks, Michael James

The objective of this work was to design, analyze and test a fast response fiber-optic temperature probe and sensor. The sensor is intended for measuring rapid temperature changes such as produced by a blast wave formed by a detonation. This work was performed in coordination with Luna Innovations Incorporated, and the design is based on extensions of an existing fiber-optic temperature sensor developed by Luna. The sensor consists of a glass fiber with an optical wafer attached to the tip. A basic description of the principles behind the fiber-optic temperature sensor and an accompanying demodulation system is provided. For experimental validation tests, shock tubes were used to simulate the blast wave experienced at a distance of 3.0 m from the detonation of 22.7 kg of TNT. The flow conditions were predicted using idealized shock tube theory. The temperature sensors were tested in three configurations, flush at the end of the shock tube, extended on a probe 2.54 cm into the flow and extended on a probe 12.7 cm into the flow. The total temperature was expected to change from 300 K to 1130 K for the flush wall experiments and from 300 K to 960 K for the probe experiments. During the initial 0.1 milliseconds of the data the temperature only changed 8 K when the sensors were flush in the end of the shock tube. The sensor temperature changed 36 K during the same time when mounted on a probe in the flow. Schlieren pictures were taken of the flow in the shock tube to further understand the shock tube environment. Contrary to ideal shock tube theory, it was discovered that the flow did not remain stagnant in the end of the shock tube after the shock reflects from the end of the shock tube. Instead, the effects of turbulence were recorded with the fiber-optic sensors, and this turbulence was also captured in the schlieren photographs. A fast-response thermocouple was used to collect data for comparison with the fiber-optic sensor, and the fiber-optic sensor was proven to have a faster response time compared to the thermocouple. When the sensors were extended 12.7 cm into the flow, the fiber-optic sensors recorded a temperature change of 143 K compared to 38 K recorded by the thermocouple during the 0.5 millisecond test. This corresponds to 22% of the change of total temperature in the air recorded by the fiber-optic sensor and only 6% recorded by the thermocouple. Put another way, the fiber-optic sensor experience a rate of temperature change equal to 2.9x105 K/s and the thermocouple changed at a rate of 0.79x105 K/s. The data recorded from the fiber-optic sensor also contained much less noise than the thermocouple data. An unsteady finite element thermal model was created using ANSYS to predict the temperature response of the sensor. Test cases with known analytical solutions were used to verify the ANSYS modeling procedures. The shock tube flow environment was also modeled with Fluent, a commercially available CFD code. Fluent was used to determine the heat transfer between the shock tube flow and the sensor. The convection film coefficient for the flow was predicted by Fluent to be 27,150 W/m2K for the front of the wafer and 13,385 W/m2K for the side. The Fluent results were used with the ANSYS model to predict the response of the fiber-optic sensor when exposed to the shock tube flow. The results from the Fluent/ANSYS model were compared to the fiber-optic measurements taken in the shock tube. It was seen that the heat flux to the sensor was slightly over-predicted by the model, and the heat losses from the wafer were also over-predicted. Since the prediction fell within the uncertainty of the measurement, it was found to be in good agreement with the measured values. (Abstract shortened by UMI.)

Fabrication of an Absorber-Coupled MKID Detector

NASA Technical Reports Server (NTRS)

Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

2012-01-01

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Fabrication of SOI structures with buried cavities using Si wafer direct bonding and electrochemical etch-stop

NASA Astrophysics Data System (ADS)

Chung, Gwiy-Sang

2003-10-01

This paper describes the fabrication of SOI structures with buried cavities using SDB and electrochemical etch-stop. These methods are suitable for thick membrane fabrication with accurate thickness, uniformity, and flatness. After a feed-through hole for supplied voltage and buried cavities was formed on a handle Si wafer with p-type, the handle wafer was bonded to an active Si wafer consisting of a p-type substrate with an n-type epitaxial layer corresponding to membrane thickness. The bonded pair was then thinned until electrochemical etch-stop occurred at the pn junction during electrochemical etchback. By using the SDB SOI structure with buried cavities, active membranes, which have a free standing structure with a dimension of 900×900 μm2, were fabricated. It is confirmed that the fabrication process of the SDB SOI structure with buried cavities is a powerful and versatile technology for new MEMS applications.

11.72-sq cm Active-Area Wafer Interconnected PiN Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA(sup 2)-s

DTIC Science & Technology

2012-01-30

calculated action exceeded 1.7 MA2 -s. Preliminary efforts on high voltage diode interconnection have produced quarter wafer interconnected PiN...was packaged in a “hockey-puck” configuration and pulsed to 64 kA, dissipating 382 J with a calculated action exceeding 1.7 MA2 -s. II. FULL...epitaxial layers are utilized. 11.72-cm2 Active-area Wafer Interconnected PiN Diode pulsed at 64 kA dissipates 382 J and exhibits an action of 1.7 MA2 -s

Autonomous chemical and biological miniature wireless-sensor

NASA Astrophysics Data System (ADS)

Goldberg, Bar-Giora

2005-05-01

The presentation discusses a new concept and a paradigm shift in biological, chemical and explosive sensor system design and deployment. From large, heavy, centralized and expensive systems to distributed wireless sensor networks utilizing miniature platforms (nodes) that are lightweight, low cost and wirelessly connected. These new systems are possible due to the emergence and convergence of new innovative radio, imaging, networking and sensor technologies. Miniature integrated radio-sensor networks, is a technology whose time has come. These network systems are based on large numbers of distributed low cost and short-range wireless platforms that sense and process their environment and communicate data thru a network to a command center. The recent emergence of chemical and explosive sensor technology based on silicon nanostructures, coupled with the fast evolution of low-cost CMOS imagers, low power DSP engines and integrated radio chips, has created an opportunity to realize the vision of autonomous wireless networks. These threat detection networks will perform sophisticated analysis at the sensor node and convey alarm information up the command chain. Sensor networks of this type are expected to revolutionize the ability to detect and locate biological, chemical, or explosive threats. The ability to distribute large numbers of low-cost sensors over large areas enables these devices to be close to the targeted threats and therefore improve detection efficiencies and enable rapid counter responses. These sensor networks will be used for homeland security, shipping container monitoring, and other applications such as laboratory medical analysis, drug discovery, automotive, environmental and/or in-vivo monitoring. Avaak"s system concept is to image a chromatic biological, chemical and/or explosive sensor utilizing a digital imager, analyze the images and distribute alarm or image data wirelessly through the network. All the imaging, processing and communications would take place within the miniature, low cost distributed sensor platforms. This concept however presents a significant challenge due to a combination and convergence of required new technologies, as mentioned above. Passive biological and chemical sensors with very high sensitivity and which require no assaying are in development using a technique to optically and chemically encode silicon wafers with tailored nanostructures. The silicon wafer is patterned with nano-structures designed to change colors ad patterns when exposed to the target analytes (TICs, TIMs, VOC). A small video camera detects the color and pattern changes on the sensor. To determine if an alarm condition is present, an on board DSP processor, using specialized image processing algorithms and statistical analysis, determines if color gradient changes occurred on the sensor array. These sensors can detect several agents simultaneously. This system is currently under development by Avaak, with funding from DARPA through an SBIR grant.

Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

DOEpatents

Wilcox, R.B.

1991-09-10

A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch. 11 figures.

Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

DOEpatents

Wilcox, Russell B.

1991-01-01

A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch.

ProTEK PSB as Biotechnology Photosensitive Protection Mask on 3C-SiC-on-Si in MEMS Sensor

NASA Astrophysics Data System (ADS)

Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

2016-11-01

This project presents the fabrication of MEMS employing a cubic silicon carbide (3C- SiC) on silicon wafer using newly developed ProTEK PSB as biotechnology photosensitive protection mask. This new biotechnology can reduce the number of processes and simplify the process flow with minimal impact on overall undercut performance. The 680 pm thick wafer is back-etched, leaving the 3C-SiC thin film with a thickness of 1.0 μm as the flexible diaphragm to detect pressure. The effect of the new coating of ProTEK PSB on different KOH solvents were investigated depending on various factors such as development time, final cure temperature and the thickness of the ProTEK PSB deposited layer. It is found that 6.174 μm thickness of ProTEK PSB offers some possibility of reducing the processing time compared to silicon nitride etch masks in KOH (55%wt, 80°C). The new ProTEK PSB biotechnology photosensitive protection mask indicates good stability and sustains its performance in different treatments under KOH and IPA for 8 hours. This work also revealed that the fabrication of MEMS sensors using the new biotechnology photosensitive protection mask provides a simple assembly approach and reduces manufacturing costs. The MEMS sensor can operate up to 500 °C as indicated under the sensitivity of 0.826 pF/MPa with nonlinearity and hysteresis of 0.61% and 3.13%, respectively.

Applications of β-limit dextrin as a matrix forming excipient for fast disintegrating buccal dosage formats.

PubMed

Qi, Xin; Tester, Richard; Liu, Yu; Mullin, Margaret

2012-01-01

To compare the properties of buccal delivery matrices (wafers) made with dextrin, β-limit dextrin and pre-gelatinised starch. The constituent α-glucans were tested for their mucoadhesive properties in solution plus their content of crystalline material (differential scanning calorimetry, DSC). Wafers were made by lyophilisation of aqueous solutions/dispersions of the α-glucans. Physical properties of the wafers were evaluated using texture analysis, dissolution coupled to photography and scanning electron microscopy (SEM). The results highlighted how the β-limit dextrins chemical and physical properties were ideally suited for the production of buccal delivery wafers. Dissolution testing confirmed the excellent hydration profile of the β-limit dextrin (within wafers) with time. Using SEM it was evident that the homogeneous "bee-hive" like structure of the β-limit dextrin wafers, unlike the other α-glucans, provided a rapidly hydratable strong porous matrix. The β-limit dextrin α-glucan makes a superb (lyophilised) mucoadhesive delivery structure for the delivery of active agents to the buccal mucosa.

Characteristics research of pressure sensor based on nanopolysilicon thin films resistors

NASA Astrophysics Data System (ADS)

Zhao, Xiaofeng; Li, Dandan; Wen, Dianzhong

2017-10-01

To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a 〈100〉 orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when I = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about -1742 ppm/∘C in the range of -40-140∘C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.

Microfabrication of Silicon/Ceramic Hybrid Cantilever for Scanning Probe Microscope and Sensor Applications

NASA Astrophysics Data System (ADS)

Wakayama, Takayuki; Kobayashi, Toshinari; Iwata, Nobuya; Tanifuji, Nozomi; Matsuda, Yasuaki; Yamada, Syoji

2003-12-01

We present here new cantilevers for scanning probe microscopy (SPM) and sensor applications, which consist of silicon cantilever beam and ceramic pedestal. Silicon is only used to make cantilever beams and tips. Precision-machinery-made ceramics replaces silicon pedestal part. The ceramics was recently developed by Sumikin Ceramics and Quarts Co., Ltd. and can be machined precisely with end mill cutting. Many silicon beams are fabricated at once from a wafer using batch fabrication method. Therefore, SPM probes can be fabricated in high productivity and in low cost. These beams are transferred with transfer technique and are bonded on the ceramic pedestal with epoxy glue. We demonstrate here atomic force microscope (AFM) and gas sensor applications of the hybrid structure. In a gas sensor application, the ends of the cantilever are selectively modified with zeolite crystals as a sensitive layer. The bonding strength is enough for each application.

Real-Time and In-Flow Sensing Using a High Sensitivity Porous Silicon Microcavity-Based Sensor.

PubMed

Caroselli, Raffaele; Martín Sánchez, David; Ponce Alcántara, Salvador; Prats Quilez, Francisco; Torrijos Morán, Luis; García-Rupérez, Jaime

2017-12-05

Porous silicon seems to be an appropriate material platform for the development of high-sensitivity and low-cost optical sensors, as their porous nature increases the interaction with the target substances, and their fabrication process is very simple and inexpensive. In this paper, we present the experimental development of a porous silicon microcavity sensor and its use for real-time in-flow sensing application. A high-sensitivity configuration was designed and then fabricated, by electrochemically etching a silicon wafer. Refractive index sensing experiments were realized by flowing several dilutions with decreasing refractive indices, and measuring the spectral shift in real-time. The porous silicon microcavity sensor showed a very linear response over a wide refractive index range, with a sensitivity around 1000 nm/refractive index unit (RIU), which allowed us to directly detect refractive index variations in the 10 -7 RIU range.

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications.

PubMed

Ayari, Taha; Bishop, Chris; Jordan, Matthew B; Sundaram, Suresh; Li, Xin; Alam, Saiful; ElGmili, Youssef; Patriarche, Gilles; Voss, Paul L; Salvestrini, Jean Paul; Ougazzaden, Abdallah

2017-11-09

The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to wearable, mobile or disposable systems. The main keys to unlocking this pathway is to grow and fabricate the sensors on large h-BN surface and to transfer them to the flexible substrate without any degradation of the performances. In this work, we develop a new generation of AlGaN/GaN gas sensors with boosted performances on a low cost flexible substrate. We fabricate 2-inch wafer scale AlGaN/GaN gas sensors on sacrificial two-dimensional (2D) nano-layered h-BN without any delamination or cracks and subsequently transfer sensors to an acrylic surface on metallic foil. This technique results in a modification of relevant device properties, leading to a doubling of the sensitivity to NO 2 gas and a response time that is more than 6 times faster than before transfer. This new approach for GaN-based sensor design opens new avenues for sensor improvement via transfer to more suitable substrates, and is promising for next-generation wearable and portable opto-electronic devices.

Development of an LSI for Tactile Sensor Systems on the Whole-Body of Robots

NASA Astrophysics Data System (ADS)

Muroyama, Masanori; Makihata, Mitsutoshi; Nakano, Yoshihiro; Matsuzaki, Sakae; Yamada, Hitoshi; Yamaguchi, Ui; Nakayama, Takahiro; Nonomura, Yutaka; Fujiyoshi, Motohiro; Tanaka, Shuji; Esashi, Masayoshi

We have developed a network type tactile sensor system, which realizes high-density tactile sensors on the whole-body of nursing and communication robots. The system consists of three kinds of nodes: host, relay and sensor nodes. Roles of the sensor node are to sense forces and, to encode the sensing data and to transmit the encoded data on serial channels by interruption handling. Relay nodes and host deal with a number of the encoded sensing data from the sensor nodes. A sensor node consists of a capacitive MEMS force sensor and a signal processing/transmission LSI. In this paper, details of an LSI for the sensor node are described. We designed experimental sensor node LSI chips by a commercial 0.18µm standard CMOS process. The 0.18µm LSIs were supplied in wafer level for MEMS post-process. The LSI chip area is 2.4mm × 2.4mm, which includes logic, CF converter and memory circuits. The maximum clock frequency of the chip with a large capacitive load is 10MHz. Measured power consumption at 10MHz clock is 2.23mW. Experimental results indicate that size, response time, sensor sensitivity and power consumption are all enough for practical tactile sensor systems.

Assembly and Integration Process of the First High Density Detector Array for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Li, Yaqiong; Choi, Steve; Ho, Shuay-Pwu; Crowley, Kevin T.; Salatino, Maria; Simon, Sara M.; Staggs, Suzanne T.; Nati, Federico; Wollack, Edward J.

2016-01-01

The Advanced ACTPol (AdvACT) upgrade on the Atacama Cosmology Telescope (ACT) consists of multichroicTransition Edge Sensor (TES) detector arrays to measure the Cosmic Microwave Background (CMB) polarization anisotropies in multiple frequency bands. The first AdvACT detector array, sensitive to both 150 and 230 GHz, is fabricated on a 150 mm diameter wafer and read out with a completely different scheme compared to ACTPol. Approximately 2000 TES bolometers are packed into the wafer leading to both a much denser detector density and readout circuitry. The demonstration of the assembly and integration of the AdvACT arrays is important for the next generation CMB experiments, which will continue to increase the pixel number and density. We present the detailed assembly process of the first AdvACT detector array.

A Wafer Transfer Technology for MEMS Adaptive Optics

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean V.

2001-01-01

Adaptive optics systems require the combination of several advanced technologies such as precision optics, wavefront sensors, deformable mirrors, and lasers with high-speed control systems. The deformable mirror with a continuous membrane is a key component of these systems. This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. This technology is developed for the fabrication of a compact deformable mirror with a continuous facet. A 1 (mu)m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.5 (mu)m shows a vertical deflection of 0.37 (mu)m at 55 V.

Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

NASA Astrophysics Data System (ADS)

Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

2009-01-01

Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

Light addressable potentiometric sensor with an array of sensing regions

NASA Astrophysics Data System (ADS)

Liang, Weiguo; Han, JingHong; Zhang, Hong; Chen, Deyong

2001-09-01

This paper describes the mechanism of light addressable poteniometric sensors (LAPS) from the viewpoints of Semiconductor Physics, and introduces the fabrication of a multi-parameter LAPS chip. The MEMS technology is applied to produce a matrix of sensing regions on the wafer. By doing that, the cross talk among these regions is reduced, and the precision of the LAPS is increased. An IR-LED matrix is used as the light source, and the flow-injection method is used to input samples. The sensor system is compact and highly integrated. The measure and control system is composed of a personal computer, a lock-in amplifier, a potentiostat, a singlechip system, and an addressing circuit. Some experiments have been done with this device. The results show that this device is very promising for practical use.

Properties of tree rings in LSST sensors

DOE PAGES

Park, H. Y.; Nomerotski, A.; Tsybychev, D.

2017-05-30

Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. Furthermore, these patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. Here, we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Treemore » ring pattern has a weak dependence on the wavelength. But the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.« less

Spatially digitized tactile pressure sensors with tunable sensitivity and sensing range.

PubMed

Choi, Eunsuk; Sul, Onejae; Hwang, Soonhyung; Cho, Joonhyung; Chun, Hyunsuk; Kim, Hongjun; Lee, Seung-Beck

2014-10-24

When developing an electronic skin with touch sensation, an array of tactile pressure sensors with various ranges of pressure detection need to be integrated. This requires low noise, highly reliable sensors with tunable sensing characteristics. We demonstrate the operation of tactile pressure sensors that utilize the spatial distribution of contact electrodes to detect various ranges of tactile pressures. The device consists of a suspended elastomer diaphragm, with a carbon nanotube thin-film on the bottom, which makes contact with the electrodes on the substrate with applied pressure. The electrodes separated by set distances become connected in sequence with tactile pressure, enabling consecutive electrodes to produce a signal. Thus, the pressure is detected not by how much of a signal is produced but by which of the electrodes is registering an output. By modulating the diaphragm diameter, and suspension height, it was possible to tune the pressure sensitivity and sensing range. Also, adding a fingerprint ridge structure enabled the sensor to detect the periodicity of sub-millimeter grating patterns on a silicon wafer.

Silicon strain gages bonded on stainless steel using glass frit for strain sensor applications

NASA Astrophysics Data System (ADS)

Zhang, Zongyang; Cheng, Xingguo; Leng, Yi; Cao, Gang; Liu, Sheng

2014-05-01

In this paper, a steel pressure sensor using strain gages bonded on a 17-4 PH stainless steel (SS) diaphragm based on glass frit technology is proposed. The strain gages with uniform resistance are obtained by growing an epi-silicon layer on a single crystal silicon wafer using epitaxial deposition technique. The inorganic glass frits are used as the bonding material between the strain gages and the 17-4 PH SS diaphragm. Our results show that the output performances of sensors at a high temperature of 125 °C are almost equal those at room temperature, which indicates that the glass frit bonding is a good method and may lead to a significant advance in the high temperature applicability of silicon strain gage sensors. Finally, the microstructure of the cured organic adhesive and the fired glass frit are compared. It may be concluded that the defects of the cured organic adhesive deteriorate the hysteresis and repeatability errors of the sensors.

Properties of tree rings in LSST sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, H. Y.; Nomerotski, A.; Tsybychev, D.

Images of uniformly illuminated sensors for the Large Synoptic Survey Telescope have circular periodic patterns with an appearance similar to tree rings. Furthermore, these patterns are caused by circularly symmetric variations of the dopant concentration in the monocrystal silicon boule induced by the manufacturing process. Non-uniform charge density results in the parasitic electric field inside the silicon sensor, which may distort shapes of astronomical sources. Here, we analyzed data from fifteen LSST sensors produced by ITL to determine the main parameters of the tree rings: amplitude and period, and also variability across the sensors tested at Brookhaven National Laboratory. Treemore » ring pattern has a weak dependence on the wavelength. But the ring amplitude gets smaller as wavelength gets longer, since longer wavelengths penetrate deeper into the silicon. Tree ring amplitude gets larger as it gets closer to the outer part of the wafer, from 0.1 to 1.0%, indicating that the resistivity variation is larger for larger radii.« less

Micro-machined resonator oscillator

DOEpatents

Koehler, Dale R.; Sniegowski, Jeffry J.; Bivens, Hugh M.; Wessendorf, Kurt O.

1994-01-01

A micro-miniature resonator-oscillator is disclosed. Due to the miniaturization of the resonator-oscillator, oscillation frequencies of one MHz and higher are utilized. A thickness-mode quartz resonator housed in a micro-machined silicon package and operated as a "telemetered sensor beacon" that is, a digital, self-powered, remote, parameter measuring-transmitter in the FM-band. The resonator design uses trapped energy principles and temperature dependence methodology through crystal orientation control, with operation in the 20-100 MHz range. High volume batch-processing manufacturing is utilized, with package and resonator assembly at the wafer level. Unique design features include squeeze-film damping for robust vibration and shock performance, capacitive coupling through micro-machined diaphragms allowing resonator excitation at the package exterior, circuit integration and extremely small (0.1 in. square) dimensioning. A family of micro-miniature sensor beacons is also disclosed with widespread applications as bio-medical sensors, vehicle status monitors and high-volume animal identification and health sensors. The sensor family allows measurement of temperatures, chemicals, acceleration and pressure. A microphone and clock realization is also available.

MEMS Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Sensor-based atomic layer deposition for rapid process learning and enhanced manufacturability

NASA Astrophysics Data System (ADS)

Lei, Wei

In the search for sensor based atomic layer deposition (ALD) process to accelerate process learning and enhance manufacturability, we have explored new reactor designs and applied in-situ process sensing to W and HfO 2 ALD processes. A novel wafer scale ALD reactor, which features fast gas switching, good process sensing compatibility and significant similarity to the real manufacturing environment, is constructed. The reactor has a unique movable reactor cap design that allows two possible operation modes: (1) steady-state flow with alternating gas species; or (2) fill-and-pump-out cycling of each gas, accelerating the pump-out by lifting the cap to employ the large chamber volume as ballast. Downstream quadrupole mass spectrometry (QMS) sampling is applied for in-situ process sensing of tungsten ALD process. The QMS reveals essential surface reaction dynamics through real-time signals associated with byproduct generation as well as precursor introduction and depletion for each ALD half cycle, which are then used for process learning and optimization. More subtle interactions such as imperfect surface saturation and reactant dose interaction are also directly observed by QMS, indicating that ALD process is more complicated than the suggested layer-by-layer growth. By integrating in real-time the byproduct QMS signals over each exposure and plotting it against process cycle number, the deposition kinetics on the wafer is directly measured. For continuous ALD runs, the total integrated byproduct QMS signal in each ALD run is also linear to ALD film thickness, and therefore can be used for ALD film thickness metrology. The in-situ process sensing is also applied to HfO2 ALD process that is carried out in a furnace type ALD reactor. Precursor dose end-point control is applied to precisely control the precursor dose in each half cycle. Multiple process sensors, including quartz crystal microbalance (QCM) and QMS are used to provide real time process information. The sensing results confirm the proposed surface reaction path and once again reveal the complexity of ALD processes. The impact of this work includes: (1) It explores new ALD reactor designs which enable the implementation of in-situ process sensors for rapid process learning and enhanced manufacturability; (2) It demonstrates in the first time that in-situ QMS can reveal detailed process dynamics and film growth kinetics in wafer-scale ALD process, and thus can be used for ALD film thickness metrology. (3) Based on results from two different processes carried out in two different reactors, it is clear that ALD is a more complicated process than normally believed or advertised, but real-time observation of the operational chemistries in ALD by in-situ sensors provides critical insight to the process and the basis for more effective process control for ALD applications.

Evolution of gettering technologies for vacuum tubes to getters for MEMS

NASA Astrophysics Data System (ADS)

Amiotti, M.

2008-05-01

Getter materials are technically proven and industrially accepted practical ways to maintain vacuum inside hermetically sealed tubes or devices to assure high reliability and long lifetime of the operating devices. The most industrially proven vacuum tube is the cathode rays tubes (CRTs), where large surfaces are available for the deposition of an evaporated barium film by a radio frequency inductive heating of a stainless steel container filled with a BaAl4 powder mixed to Ni powder. The evolution of the CRTs manufacturing technologies required also new types of barium getters able to withstand some thermal process in air without any deterioration of the evaporation characteristics. In other vacuum tubes such as traveling waves tubes, the space available for the evaporation of a barium film and the sorption capacity required to assure the vacuum for the lifetime of the devices did not allow the use of the barium film, prompting the development of sintered non evaporable getter pills that can be activated during the manufacturing process or by flowing current through an embedded resistance. The same sintered non evaporable getter pills could find usage also in evacuated parts to thermally isolate the infrared sensors for different final applications. In high energy physics particle accelerators, the getter technology moved from localized vacuum getter pumps or getter strips to a getter coating over the surface of vacuum chambers in order to guarantee a more uniform pumping speed. With the advent of solid state electronics, new challenges faced the getter technology to assure long life to vacuum or inert gas filled hermetical packages containing microelectronic devices, especially in the telecommunication and military applications. A well known problem of GaAs devices with Pd or Pt metalization is the H2 poisoning of the metal gate: to prevent this degradation a two layer getter film has been develop to absorb a large quantity of H2 per unit of getter surface. The development of Micro Electro Mechanical Systems (MEMS) with moving parts in a vacuum environment required the development of a new generation of getter film, few microns thick, that can be selectively patterned onto a silicon or glass wafer (usually 4'' or 8''). This wafer with patterned getter film can be used directly as the cap wafer of a wafer to wafer bonded MEMS structure, assuring long life and reliability to the moving MEMS structure especially in automotive applications where thermal cycles are required for qualification.

Measuring Physical Properties of Neuronal and Glial Cells with Resonant Microsensors

PubMed Central

2015-01-01

Microelectromechanical systems (MEMS) resonant sensors provide a high degree of accuracy for measuring the physical properties of chemical and biological samples. These sensors enable the investigation of cellular mass and growth, though previous sensor designs have been limited to the study of homogeneous cell populations. Population heterogeneity, as is generally encountered in primary cultures, reduces measurement yield and limits the efficacy of sensor mass measurements. This paper presents a MEMS resonant pedestal sensor array fabricated over through-wafer pores compatible with vertical flow fields to increase measurement versatility (e.g., fluidic manipulation and throughput) and allow for the measurement of heterogeneous cell populations. Overall, the improved sensor increases capture by 100% at a flow rate of 2 μL/min, as characterized through microbead experiments, while maintaining measurement accuracy. Cell mass measurements of primary mouse hippocampal neurons in vitro, in the range of 0.1–0.9 ng, demonstrate the ability to investigate neuronal mass and changes in mass over time. Using an independent measurement of cell volume, we find cell density to be approximately 1.15 g/mL. PMID:24734874

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode

NASA Astrophysics Data System (ADS)

Ariyoshi, Tetsuya; Takane, Yuta; Iwasa, Jumpei; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

2018-04-01

In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6 mm and a trench depth of 300 µm was fabricated using a single-poly single-metal 0.35 µm process. X-rays with a tube voltage of 80 kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

Advanced Photonic Sensors Enabled by Semiconductor Bonding

DTIC Science & Technology

2010-05-31

a dry scroll backing pump to maintain the high differential pressure between the UV gun and the sample/analysis chamber. We also replaced the...semiconductor materials in an ultra-high vacuum (UHV) environment where the properties of the interface can be controlled with atomic-level precision. Such...year research program, we designed and constructed a unique system capable of fusion bonding two wafers in an ultra-high vacuum environment. This system

Embedded Ultrasonics for SHM of Space Applications

DTIC Science & Technology

2012-07-30

information on material properties and other forms of damage such as cracks, structural fatigue and/or impact events. This synergistic aspect of the embedded...larger the phase shift. However, high excitation levels could contribute to sensor fatigue and levels in a range 15 to 20 (110 to 130 volts) are...joints each featuring three bolts. Piezoelectric wafers ( PZT ) with UNF electrodes were bonded to the isogrid panels using 3M 2216 epoxy

Optimization of Graphene Sensors to Detect Biological Warfare Agents

DTIC Science & Technology

2014-03-27

conductor and a metal at room temperature [53] and in some cases, it acts like a p- type semiconductor [54]. The knowledge of the conductivity ...aptamer functionalized graphene layer interaction was available. Silicon wafers with thermal oxide coats were explored as a next step. The available...picked due to its high electrical conductivity (100,00cm/Vs) and functionalization properties [17]. Figure 1 conceptually represents a graphene-field

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

A multi-feature integration method for fatigue crack detection and crack length estimation in riveted lap joints using Lamb waves

NASA Astrophysics Data System (ADS)

He, Jingjing; Guan, Xuefei; Peng, Tishun; Liu, Yongming; Saxena, Abhinav; Celaya, Jose; Goebel, Kai

2013-10-01

This paper presents an experimental study of damage detection and quantification in riveted lap joints. Embedded lead zirconate titanate piezoelectric (PZT) ceramic wafer-type sensors are employed to perform in situ non-destructive evaluation (NDE) during fatigue cyclical loading. PZT wafers are used to monitor the wave reflection from the boundaries of the fatigue crack at the edge of bolt joints. The group velocity of the guided wave is calculated to select a proper time window in which the received signal contains the damage information. It is found that the fatigue crack lengths are correlated with three main features of the signal, i.e., correlation coefficient, amplitude change, and phase change. It was also observed that a single feature cannot be used to quantify the damage among different specimens since a considerable variability was observed in the response from different specimens. A multi-feature integration method based on a second-order multivariate regression analysis is proposed for the prediction of fatigue crack lengths using sensor measurements. The model parameters are obtained using training datasets from five specimens. The effectiveness of the proposed methodology is demonstrated using several lap joint specimens from different manufactures and under different loading conditions.

Carbon Nanotube Based Nano-Electro-Mechanical Systems (NEMS)

NASA Technical Reports Server (NTRS)

Han, Jie; Dai, Hongjie; Saini, Subhash

1998-01-01

Carbon nanotubes (CNT) enable nanoelectromechanical systems (NEMS) because of their inherent nanostructure, intrinsic electric conductivity and mechanical resilience. The collaborative work between Stanford (experiment) and NASA Ames (theory and simulation) has made progress in two types of CNT based NEMS for nanoelectronics and sensor applications. The CNT tipped scanning probe microscopy (SPM) is a NEMS in which CNT tips are used for nanoscale probing, imaging and manipulating. It showed great improvement in probing surfaces and biological systems over conventional tips. We have recently applied it to write (lithography) and read (image) uniform SiO2 lines on large Si surface area at speed up to 0.5 mm per s. Preliminary work using approximately 10 nm multiwall nanotube tips produced approximately 10 nm structures and showed that the CNT tips didn't wear down when crashed as conventional tips often do. This presents a solution to the long standing tip-wear problem in SPM nanolithography. We have also explored potential of CNT tips in imaging DNA in water. Preliminary experiment using 10 nm CNT tips reached 5 nm resolution. The 1 nm nanolithography and 1 nm DNA imaging can be expected by using approximately 1 nm CNT tips. In contrast to CNT tipped SPM, we also fabricated CNT devices on silicon wafer in which CNTs connect patterned metallic lines on SiO2/Si by a simple chemical vapor deposition process. Using conventional lithography for silicon wafer, we have been able to obtain CNT based transistors and sensors. Investigations of the CNT NEMS as physical, biological and chemical sensors are in progress and will be discussed.

Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing

NASA Astrophysics Data System (ADS)

Wang, Ashu; Zeng, Lingyan; Wang, Wen; Calle, Fernando

2018-03-01

Due to the piezoelectricity, the density of 2DEG (NS) formed in the AlGaN/GaN heterostructure can be altered when it is deformed externally, which may be exploited to develop pressure sensors and to enhance the performance of power devices by stress engineering based on the heterostructure. In this paper, a 3D electro-mechanical simulation is presented to study how the induced strains and NS for the AlGaN/GaN wafer under bending exerted uniaxial stress are influenced by the edges caused by processing: the fabrication of the mesa used for isolation, the ohmic contact metal, the gate metal, and the passivation. Results show that the influences are dependent on distance between the edges, depth of the edges, and direction of the exerted uniaxial stress.

Surface Profile and Stress Field Evaluation using Digital Gradient Sensing Method

DOE PAGES

Miao, C.; Sundaram, B. M.; Huang, L.; ...

2016-08-09

Shape and surface topography evaluation from measured orthogonal slope/gradient data is of considerable engineering significance since many full-field optical sensors and interferometers readily output accurate data of that kind. This has applications ranging from metrology of optical and electronic elements (lenses, silicon wafers, thin film coatings), surface profile estimation, wave front and shape reconstruction, to name a few. In this context, a new methodology for surface profile and stress field determination based on a recently introduced non-contact, full-field optical method called digital gradient sensing (DGS) capable of measuring small angular deflections of light rays coupled with a robust finite-difference-based least-squaresmore » integration (HFLI) scheme in the Southwell configuration is advanced here. The method is demonstrated by evaluating (a) surface profiles of mechanically warped silicon wafers and (b) stress gradients near growing cracks in planar phase objects.« less

Flip chip bumping technology—Status and update

NASA Astrophysics Data System (ADS)

Juergen Wolf, M.; Engelmann, Gunter; Dietrich, Lothar; Reichl, Herbert

2006-09-01

Flip chip technology is a key driver for new complex system architectures and high-density packaging, e.g. sensor or pixel devices. Bumped wafers/dice as key elements become very important in terms of general availability at low cost, high yield and quality level. Today, different materials, e.g. Au, Ni, AuSn, SnAg, SnAgCu, SnCu, etc., are used for flip chip interconnects and different bumping approaches are available. Electroplating is the technology of choice for high-yield wafer bumping for small bump sizes and pitches. Lead-free solder bumps require an increase in knowledge in the field of under bump metallization (UBM) and the interaction of bump and substrate metallization, the formation and growth of intermetallic compounds (IMCs) during liquid- and solid-phase reactions. Results of a new bi-layer UBM of Ni-Cu which is especially designed for small-sized lead-free solder bumps will be discussed.

A MEMS-based Air Flow Sensor with a Free-standing Micro-cantilever Structure.

PubMed

Wang, Yu-Hsiang; Lee, Chia-Yen; Chiang, Che-Ming

2007-10-17

This paper presents a micro-scale air flow sensor based on a free-standingcantilever structure. In the fabrication process, MEMS techniques are used to deposit asilicon nitride layer on a silicon wafer. A platinum layer is deposited on the silicon nitridelayer to form a piezoresistor, and the resulting structure is then etched to create afreestanding micro-cantilever. When an air flow passes over the surface of the cantileverbeam, the beam deflects in the downward direction, resulting in a small variation in theresistance of the piezoelectric layer. The air flow velocity is determined by measuring thechange in resistance using an external LCR meter. The experimental results indicate that theflow sensor has a high sensitivity (0.0284 ω/ms -1 ), a high velocity measurement limit (45ms -1 ) and a rapid response time (0.53 s).

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

PubMed

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

First results on label-free detection of DNA and protein molecules using a novel integrated sensor technology based on gravimetric detection principles.

PubMed

Gabl, R; Feucht, H-D; Zeininger, H; Eckstein, G; Schreiter, M; Primig, R; Pitzer, D; Wersing, W

2004-01-15

A novel integrated bio-sensor technology based on thin-film bulk acoustic wave resonators on silicon is presented and the feasibility of detecting DNA and protein molecules proofed. The detection principle of these sensors is label-free and relies on a resonance frequency shift caused by mass loading of an acoustic resonator, a principle very well known from quartz crystal micro balances. Integrated ZnO bulk acoustic wave resonators with resonance frequencies around 2 GHz have been fabricated, employing an acoustic mirror for isolation from the silicon substrate. DNA oligos have been thiol-coupled to the gold electrode by on-wafer dispensing. In a further step, samples have either been hybridised or alternatively a protein has been coupled to the receptor. The measurement results show the new bio-sensor being capable of both, detecting proteins as well as the DNA hybridisation without using a label. Due to the substantially higher oscillation frequency, these sensors already show much higher sensitivity and resolution comparable to quartz crystal micro balances. The potential for these sensors and sensors arrays as well as technological challenges will be discussed in detail.

Design optimization and fabrication of a novel structural piezoresistive pressure sensor for micro-pressure measurement

NASA Astrophysics Data System (ADS)

Li, Chuang; Cordovilla, Francisco; Ocaña, José L.

2018-01-01

This paper presents a novel structural piezoresistive pressure sensor with a four-beams-bossed-membrane (FBBM) structure that consisted of four short beams and a central mass to measure micro-pressure. The proposed structure can alleviate the contradiction between sensitivity and linearity to realize the micro measurement with high accuracy. In this study, the design, fabrication and test of the sensor are involved. By utilizing the finite element analysis (FEA) to analyze the stress distribution of sensitive elements and subsequently deducing the relationships between structural dimensions and mechanical performance, the optimization process makes the sensor achieve a higher sensitivity and a lower pressure nonlinearity. Based on the deduced equations, a series of optimized FBBM structure dimensions are ultimately determined. The designed sensor is fabricated on a silicon wafer by using traditional MEMS bulk-micromachining and anodic bonding technology. Experimental results show that the sensor achieves the sensitivity of 4.65 mV/V/kPa and pressure nonlinearity of 0.25% FSS in the operating range of 0-5 kPa at room temperature, indicating that this novel structure sensor can be applied in measuring the absolute micro pressure lower than 5 kPa.

A Micro-Force Sensor with Slotted-Quad-Beam Structure for Measuring the Friction in MEMS Bearings

PubMed Central

Liu, Huan; Yang, Shuming; Zhao, Yulong; Jiang, Zhuangde; Liu, Yan; Tian, Bian

2013-01-01

Presented here is a slotted-quad-beam structure sensor for the measurement of friction in micro bearings. Stress concentration slots are incorporated into a conventional quad-beam structure to improve the sensitivity of force measurements. The performance comparison between the quad-beam structure sensor and the slotted-quad-beam structure sensor are performed by theoretical modeling and finite element (FE) analysis. A hollow stainless steel probe is attached to the mesa of the sensor chip by a tailor-made organic glass fixture. Concerning the overload protection of the fragile beams, a glass wafer is bonded onto the bottom of sensor chip to limit the displacement of the mesa. The calibration of the packaged device is experimentally performed by a tri-dimensional positioning stage, a precision piezoelectric ceramic and an electronic analytical balance, which indicates its favorable sensitivity and overload protection. To verify the potential of the proposed sensor being applied in micro friction measurement, a measurement platform is established. The output of the sensor reflects the friction of bearing resulting from dry friction and solid lubrication. The results accord with the theoretical modeling and demonstrate that the sensor has the potential application in measuring the micro friction force under stable stage in MEMS machines. PMID:24084112

Large format imaging arrays for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Wollack, E. J.; Marraige, T.; Staggs, S.; Niemack, M.; Doriese, B.

2006-01-01

We describe progress in the fabrication, characterization, and production of detector arrays for the Atacama Cosmology Telescope (ACT). The completed ACT instrument is specified to image simultaneously at 145, 225, and 265 GHz using three 32x32 filled arrays of superconducting transition edge sensors (TES) read out with time-division-multiplexed SQUID amplifiers. We present details of the pixel design and testing including the optimization of the electrical parameters for multiplexed readout. Using geometric noise suppression and careful tuning of operation temperature and device bias resistance, the excess noise in the TES devices is balanced with detector speed for interfacing with the ACT optics. The design also accounts for practical tolerances such as transition temperature gradients and scatter that occur in the production of multiple wafers to populate fully the kilopixel cameras. We have developed an implanted absorber layer compatible with our silicon-on-insulator process that allows for tunable optical resistance with requisite on-wafer uniformity and wafer-to-wafer reproducibility. Arrays of 32 elements have been tested in the laboratory environment including electrical, optical, and multiplexed performance. Given this pixel design, optical tests and modeling are used to predict the performance of the filled array under anticipated viewing conditions. Integration of the filled array of pixels with a tuned backshort and dielectric plate in front of the array maximize absorption and the focal plane and suppress reflections. A mechanical design for the build of the full structure is completed and we report on progress toward the construction of a prototype array for first light on the ACT.

ALPIDE: the Monolithic Active Pixel Sensor for the ALICE ITS upgrade

NASA Astrophysics Data System (ADS)

Šuljić, M.

2016-11-01

The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (2019-2020) of the CERN Large Hadron Collider (LHC) . The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of ~10 m2, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The ALPIDE chip, based on TowerJazz 180 nm CMOS Imaging Process, is being developed for this purpose. A particular process feature, the deep p-well, is exploited so the full CMOS logic can be implemented over the active sensor area without impinging on the deposited charge collection. ALPIDE is implemented on silicon wafers with a high resistivity epitaxial layer. A single chip measures 15 mm by 30 mm and contains half a million pixels distributed in 512 rows and 1024 columns. In-pixel circuitry features amplification, shaping, discrimination and multi-event buffering. The readout is hit driven i.e. only addresses of hit pixels are sent to the periphery. The upgrade of the ITS presents two different sets of requirements for sensors of the inner and of the outer layers due to the significantly different track density, radiation level and active detector surface. The ALPIDE chip fulfils the stringent requirements in both cases. The detection efficiency is higher than 99%, fake-hit probability is orders of magnitude lower than the required 10-6 and spatial resolution within the required 5 μm. This performance is to be maintained even after a total ionising does (TID) of 2.7 Mrad and a non-ionising energy loss (NIEL) fluence of 1.7 × 1013 1 MeV neq/cm2, which is above what is expected during the detector lifetime. Readout rate of 100 kHz is provided and the power density of ALPIDE is less than 40 mW/cm2. This contribution will provide a summary of the ALPIDE features and main test results.

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Controllable laser thermal cleavage of sapphire wafers

NASA Astrophysics Data System (ADS)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

A thermal microprobe fabricated with wafer-stage processing

NASA Astrophysics Data System (ADS)

Zhang, Yongxia; Zhang, Yanwei; Blaser, Juliana; Sriram, T. S.; Enver, Ahsan; Marcus, R. B.

1998-05-01

A thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an atomic force microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. For high resolution temperature sensing it is essential that the junction be confined to a short distance at the AFM tip. This confinement is achieved by a controlled photoresist coating process. Experiment prototypes have been made with an Au/Pd junction confined to within 0.5 μm of the tip, with the two metals separated elsewhere by a thin insulating oxide layer. Processing begins with double-polished, n-type, 4 in. diameter, 300-μm-thick silicon wafers. Atomically sharp probe tips are formed by a combination of dry and wet chemical etching, and oxidation sharpening. The metal layers are sputtering deposited and the cantilevers are released by a combination of KOH and dry etching. A resistively heated calibration device was made for temperature calibration of the thermal microprobe over the temperature range 25-110 °C. Over this range the thermal outputs of two microprobes are 4.5 and 5.6 μV/K and is linear. Thermal and topographical images are also obtained from a heated tungsten thin film fuse.

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

A Feasibility Study to Control Airfoil Shape Using THUNDER

NASA Technical Reports Server (NTRS)

Pinkerton, Jennifer L.; Moses, Robert W.

1997-01-01

The objective of this study was to assess the capabilities of a new out-of-plane displacement piezoelectric actuator called thin-layer composite-unimorph ferroelectric driver and sensor (THUNDER) to alter the upper surface geometry of a subscale airfoil to enhance performance under aerodynamic loading. Sixty test conditions, consisting of combinations of five angles of attack, four dc applied voltages, and three tunnel velocities, were studied in a tabletop wind tunnel. Results indicated that larger magnitudes of applied voltage produced larger wafer displacements. Wind-off displacements were also consistently larger than wind-on. Higher velocities produced larger displacements than lower velocities because of increased upper surface suction. Increased suction also resulted in larger displacements at higher angles of attack. Creep and hysteresis of the wafer, which were identified at each test condition, contributed to larger negative displacements for all negative applied voltages and larger positive displacements for the smaller positive applied voltage (+102 V). An elastic membrane used to hold the wafer to the upper surface hindered displacements at the larger positive applied voltage (+170 V). Both creep and hysteresis appeared bounded based on the analysis of several displacement cycles. These results show that THUNDER can be used to alter the camber of a small airfoil under aerodynamic loads.

A front-end wafer-level microsystem packaging technique with micro-cap array

NASA Astrophysics Data System (ADS)

Chiang, Yuh-Min

2002-09-01

The back-end packaging process is the remaining challenge for the micromachining industry to commercialize microsystem technology (MST) devices at low cost. This dissertation presents a novel wafer level protection technique as a final step of the front-end fabrication process for MSTs. It facilitates improved manufacturing throughput and automation in package assembly, wafer level testing of devices, and enhanced device performance. The method involves the use of a wafer-sized micro-cap array, which consists of an assortment of small caps micro-molded onto a material with adjustable shapes and sizes to serve as protective structures against the hostile environments during packaging. The micro-cap array is first constructed by a micromachining process with micro-molding technique, then sealed to the device wafer at wafer level. Epoxy-based wafer-level micro cap array has been successfully fabricated and showed good compatibility with conventional back-end packaging processes. An adhesive transfer technique was demonstrated to seal the micro cap array with a MEMS device wafer. No damage or gross leak was observed while wafer dicing or later during a gross leak test. Applications of the micro cap array are demonstrated on MEMS, microactuators fabricated using CRONOS MUMPS process. Depending on the application needs, the micro-molded cap can be designed and modified to facilitate additional component functions, such as optical, electrical, mechanical, and chemical functions, which are not easily achieved in the device by traditional means. Successful fabrication of a micro cap array comprised with microlenses can provide active functions as well as passive protection. An optical tweezer array could be one possibility for applications of a micro cap with microlenses. The micro cap itself could serve as micro well for DNA or bacteria amplification as well.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2008-10-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-04-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-03-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

THz quantum cascade lasers with wafer bonded active regions.

PubMed

Brandstetter, M; Deutsch, C; Benz, A; Cole, G D; Detz, H; Andrews, A M; Schrenk, W; Strasser, G; Unterrainer, K

2012-10-08

We demonstrate terahertz quantum-cascade lasers with a 30 μm thick double-metal waveguide, which are fabricated by stacking two 15 μm thick active regions using a wafer bonding process. By increasing the active region thickness more optical power is generated inside the cavity, the waveguide losses are decreased and the far-field is improved due to a larger facet aperture. In this way the output power is increased by significantly more than a factor of 2 without reducing the maximum operating temperature and without increasing the threshold current.

Touch-mode capacitive pressure sensor with graphene-polymer heterostructure membrane

NASA Astrophysics Data System (ADS)

Berger, Christian; Phillips, Rory; Pasternak, Iwona; Sobieski, Jan; Strupinski, Wlodek; Vijayaraghavan, Aravind

2018-01-01

We describe the fabrication and characterisation of a touch-mode capacitive pressure sensor (TMCPS) with a robust design that comprises a graphene-polymer heterostructure film, laminated onto the silicon dioxide surface of a silicon wafer, incorporating a SU-8 spacer grid structure. The spacer grid structure allows the flexible graphene-polymer film to be partially suspended above the substrate, such that a pressure on the membrane results in a reproducible deflection, even after exposing the membrane to pressures over 10 times the operating range. Sensors show reproducible pressure transduction in water submersion at varying depths under static and dynamic loading. The measured capacitance change in response to pressure is in good agreement with an analytical model of clamped plates in touch mode. The device shows a pressure sensitivity of 27.1 +/- 0.5 fF Pa-1 over a pressure range of 0.5 kPa-8.5 kPa. In addition, we demonstrate the operation of this device as a force-touch sensor in air.

THz Hot-Electron Photon Counter

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Sergeev, Andrei V.

2004-01-01

We present a concept for the hot-electron transition-edge sensor capable of counting THz photons. The main need for such a sensor is a spectroscopy on future space telescopes where a background limited NEP approx. 10(exp -20) W/H(exp 1/2) is expected at around 1 THz. Under these conditions, the rate of photon arrival is very low and any currently imaginable detector with sufficient sensitivity will operate in the photon counting mode. The Hot-Electron Photon Counter based on a submicron-size Ti bridge has a very low heat capacity which provides a high enough energy resolution (approx.140 GHz) at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range would be approx. 30 dB. The sensor couples to radiation via a planar antenna and is read by a SQUID amplifier or by a 1-bit RSFQ ADC. A compact array of the antenna-coupled counters can be fabricated on a silicon wafer without membranes.

A 1280×1024-15μm CTIA ROIC for SWIR FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Isikhan, Murat; Bayhan, Nusret; Gulden, M. A.; Incedere, O. S.; Soyer, S. T.; Kocak, Serhat; Yalcin, Cem; Ustundag, M. Cem B.; Turan, Ozge; Eksi, Umut; Akin, Tayfun

2015-06-01

This paper reports the development of a new SXGA format low-noise CTIA ROIC (MT12815CA-3G) suitable for mega-pixel SWIR InGaAs detector arrays for low-light imaging applications. MT12815CA-3G is the first mega-pixel standard ROIC product from Mikro-Tasarim, which is a fabless semiconductor company specialized in the development of ROICs and ASICs for visible and infrared hybrid imaging sensors. MT12815CA-3G is a low-noise snapshot mega-pixel CTIA ROIC, has a format of 1280 × 1024 (SXGA) and pixel pitch of 15 μm. MT12815CA-3G has been developed with the system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any special external inputs. MT12815CA-3G is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) modes. The CTIA type pixel input circuitry has 3 gain modes with programmable full-well-capacity (FWC) values of 10K e-, 20K e-, and 350K e- in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT12815CA-3G has an input referred noise level of less than 5 e- in the very high gain (VHG) mode, suitable for very low-noise SWIR imaging applications. MT12815CA-3G has 8 analog video outputs that can be programmed in 8, 4, or 2-output modes with a selectable analog reference for pseudo-differential operation. The ROIC runs at 10 MHz and supports frame rate values up to 55 fps in the 8-output mode. The integration time of the ROIC can be programmed up to 1s in steps of 0.1 μs. The ROIC uses 3.3 V and 1.8V supply voltages and dissipates less than 350 mW in the 4-output mode. MT12815CA-3G is fabricated using a modern mixed-signal CMOS process on 200 mm CMOS wafers, and there are 44 ROIC parts per wafer. The probe tests show that the die yield is higher than 70%, which corresponds to more than 30 working ROIC parts per wafer typically. MT12815CA-3G ROIC is available as tested wafers or dies, where a detailed test report and wafer map are provided for each wafer. A compact USB 3.0 based test camera and imaging software are also available for the customers to test and evaluate the imaging performance of SWIR sensors built using MT12815CA-3G ROICs. Mikro-Tasarim has also recently developed a programmable mixed-signal application specific integrated circuit (ASIC), called MTAS1410X8, which is designed to perform ROIC driving and digitization functions for ROICs with analog outputs, such as MT12815CA-3G and MT6415CA ROIC products of Mikro-Tasarim. MTAS1410X8 has 8 simultaneously working 14-bit analog-to-digital converters (ADCs) with integrated programmable gain amplifiers (PGAs), video input buffers, programmable controller, and high-speed digital video interface supporting various formats including Camera-Link. MT12815CA-3G ROIC together with MTAS1410X8 ASIC can be used to develop low-noise high-resolution SWIR imaging sensors with low power dissipation and reduced board area for the camera electronics.

ELITE-3 active vibration isolation workstation

NASA Astrophysics Data System (ADS)

Anderson, Eric H.; Houghton, Bowie

2001-06-01

This paper describes the development and capabilities of ELITE-3, a product that incorporates piezoelectric actuators to provide ultrastable work surfaces for very high resolution wafer production, metrology, microscopy, and other applications. The electromechanical, electronic, and software/firmware parts of the ELITE-3 active workstation are described, with an emphasis on considerations relating to the piezoelectric transducers. Performance of the system and its relation to the smart materials is discussed. As the floor beneath a vibration-sensitive instrument supported by ELITE-3 moves, piezoelectrics are controlled to minimize the motion of the instrument. A digital signal processor (DSP) determines the appropriate signals to apply to the actuators. A PC-based interface allows reprogramming of control algorithms and resetting of other parameters within the firmware. The modular product allows incorporation of vibration isolator, actuator and sensor modules into original equipment manufacturer (OEM) products. Alternatively, a workstation can be integrated as an integrated standalone system. The paper describes the system architecture, overall approach to vibration isolation, and various system components, and summarizes motivations for key design approaches.

Acoustic-sensor-based detection of damage in composite aircraft structures

NASA Astrophysics Data System (ADS)

Foote, Peter; Martin, Tony; Read, Ian

2004-03-01

Acoustic emission detection is a well-established method of locating and monitoring crack development in metal structures. The technique has been adapted to test facilities for non-destructive testing applications. Deployment as an operational or on-line automated damage detection technology in vehicles is posing greater challenges. A clear requirement of potential end-users of such systems is a level of automation capable of delivering low-level diagnosis information. The output from the system is in the form of "go", "no-go" indications of structural integrity or immediate maintenance actions. This level of automation requires significant data reduction and processing. This paper describes recent trials of acoustic emission detection technology for the diagnosis of damage in composite aerospace structures. The technology comprises low profile detection sensors using piezo electric wafers encapsulated in polymer film ad optical sensors. Sensors are bonded to the structure"s surface and enable acoustic events from the loaded structure to be located by triangulation. Instrumentation has been enveloped to capture and parameterise the sensor data in a form suitable for low-bandwidth storage and transmission.

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

NASA Astrophysics Data System (ADS)

Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

2018-02-01

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Micro-machined resonator oscillator

DOEpatents

Koehler, D.R.; Sniegowski, J.J.; Bivens, H.M.; Wessendorf, K.O.

1994-08-16

A micro-miniature resonator-oscillator is disclosed. Due to the miniaturization of the resonator-oscillator, oscillation frequencies of one MHz and higher are utilized. A thickness-mode quartz resonator housed in a micro-machined silicon package and operated as a telemetered sensor beacon'' that is, a digital, self-powered, remote, parameter measuring-transmitter in the FM-band. The resonator design uses trapped energy principles and temperature dependence methodology through crystal orientation control, with operation in the 20--100 MHz range. High volume batch-processing manufacturing is utilized, with package and resonator assembly at the wafer level. Unique design features include squeeze-film damping for robust vibration and shock performance, capacitive coupling through micro-machined diaphragms allowing resonator excitation at the package exterior, circuit integration and extremely small (0.1 in. square) dimensioning. A family of micro-miniature sensor beacons is also disclosed with widespread applications as bio-medical sensors, vehicle status monitors and high-volume animal identification and health sensors. The sensor family allows measurement of temperatures, chemicals, acceleration and pressure. A microphone and clock realization is also available. 21 figs.

Microelectromechanical system pressure sensor integrated onto optical fiber by anodic bonding.

PubMed

Saran, Anish; Abeysinghe, Don C; Boyd, Joseph T

2006-03-10

Optical microelectromechanical system pressure sensors based on the principle of Fabry-Perot interferometry have been developed and fabricated using the technique of silicon-to-silicon anodic bonding. The pressure sensor is then integrated onto an optical fiber by a novel technique of anodic bonding without use of any adhesives. In this anodic bonding technique we use ultrathin silicon of thickness 10 microm to bond the optical fiber to the sensor head. The ultrathin silicon plays the role of a stress-reducing layer, which helps the bonding of an optical fiber to silicon having conventional wafer thickness. The pressure-sensing membrane is formed by 8 microm thick ultrathin silicon acting as a membrane, thus eliminating the need for bulk silicon etching. The pressure sensor integrated onto an optical fiber is tested for static response, and experimental results indicate degradation in the fringe visibility of the Fabry-Perot interferometer. This effect was mainly due to divergent light rays from the fiber degrading the fringe visibility. This effect is demonstrated in brief by an analytical model.

Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers

NASA Technical Reports Server (NTRS)

Anthony, Thomas R. (Inventor)

1983-01-01

Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

International Conference on Indium Phosphide and Related Materials, Held in Cape Cod, Massachusetts, on 11 - 15 May 1997.

DTIC Science & Technology

1998-01-14

runaway cells are very uniform across the wafer. On-wafer active load- causing the so-called current collapse. Using a Au air- pull measurement was...Input Power [ dBm] support and encouragement. References Fig. 4: On-wafer load- pull measurement at 9 GHz. [1] P. M. Asbeck, M. C. F. Chang, J. A...Measured Load Pull Characteristics of the 0.15gm x 300gm GaInAs/InP HEMT at 7GHz. 160 exceeded 830 mS/mm for > 0.5V. The 140 small-signal output

1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

PubMed

Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

2009-05-25

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

MT6415CA: a 640×512-15µm CTIA ROIC for SWIR InGaAs detector arrays

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Isikhan, Murat; Bayhan, Nusret; Gulden, M. Ali; Incedere, O. Samet; Soyer, S. Tuncer; Kocak, Serhat; Yilmaz, Gokhan S.; Akin, Tayfun

2013-06-01

This paper reports the development of a new low-noise CTIA ROIC (MT6415CA) suitable for SWIR InGaAs detector arrays for low-light imaging applications. MT6415CA is the second product in the MT6400 series ROICs from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic imaging sensors and ROICs for hybrid imaging sensors. MT6415CA is a low-noise snapshot CTIA ROIC, has a format of 640 × 512 and pixel pitch of 15 µm, and has been developed with the system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT6415CA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. It performs snapshot operation both using Integrate-Then-Read (ITR) and Integrate-While-Read (IWR) modes. The CTIA type pixel input circuitry has three gain modes with programmable full-well-capacity (FWC) values of 10.000 e-, 20.000 e-, and 350.000 e- in the very high gain (VHG), high-gain (HG), and low-gain (LG) modes, respectively. MT6415CA has an input referred noise level of less than 5 e- in the very high gain (VHG) mode, suitable for very low-noise SWIR imaging applications. MT6415CA has 8 analog video outputs that can be programmed in 8, 4, or 2-output modes with a selectable analog reference for pseudo-differential operation. The ROIC runs at 10 MHz and supports frame rate values up to 200 fps in the 8-output mode. The integration time can be programmed up to 1s in steps of 0.1 µs. The ROIC uses 3.3 V and 1.8V supply voltages and dissipates less than 150 mW in the 4-output mode. MT6415CA is fabricated using a modern mixed-signal CMOS process on 200 mm CMOS wafers, and tested parts are available at wafer or die levels with test reports and wafer maps. A compact USB 3.0 camera and imaging software have been developed to demonstrate the imaging performance of SWIR sensors built with MT6415CA ROIC

Beam test results of a monolithic pixel sensor in the 0.18 μm tower-jazz technology with high resistivity epitaxial layer

NASA Astrophysics Data System (ADS)

Mattiazzo, S.; Aimo, I.; Baudot, J.; Bedda, C.; La Rocca, P.; Perez, A.; Riggi, F.; Spiriti, E.

2015-10-01

The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 0.18 μm CMOS imaging sensor process has been chosen as it is possible to use full CMOS in the pixel and different silicon wafers (including high resistivity epitaxial layers). A large test campaign has been carried out on several small prototype chips, designed to optimize the pixel sensor layout and the front-end electronics. Results match the target requirements both in terms of performance and of radiation hardness. Following this development, the first full scale chips have been designed, submitted and are currently under test, with promising results. A telescope composed of 4 planes of Mimosa-28 and 2 planes of Mimosa-18 chips is under development at the DAFNE Beam Test Facility (BTF) at the INFN Laboratori Nazionali di Frascati (LNF) in Italy with the final goal to perform a comparative test of the full scale prototypes. The telescope has been recently used to test a Mimosa-22THRb chip (a monolithic pixel sensor built in the 0.18 μm Tower-Jazz process) and we foresee to perform tests on the full scale chips for the ALICE ITS upgrade at the beginning of 2015. In this contribution we will describe some first measurements of spatial resolution, fake hit rate and detection efficiency of the Mimosa-22THRb chip obtained at the BTF facility in June 2014 with an electron beam of 500 MeV.

Optical Addressing Electronic Tongue Based on Low Selective Photovoltaic Transducer with Nanoporous Silicon Layer

NASA Astrophysics Data System (ADS)

Litvinenko, S. V.; Bielobrov, D. O.; Lysenko, V.; Skryshevsky, V. A.

2016-08-01

The electronic tongue based on the array of low selective photovoltaic (PV) sensors and principal component analysis is proposed for detection of various alcohol solutions. A sensor array is created at the forming of p-n junction on silicon wafer with porous silicon layer on the opposite side. A dynamical set of sensors is formed due to the inhomogeneous distribution of the surface recombination rate at this porous silicon side. The sensitive to molecular adsorption photocurrent is induced at the scanning of this side by laser beam. Water, ethanol, iso-propanol, and their mixtures were selected for testing. It is shown that the use of the random dispersion of surface recombination rates on different spots of the rear side of p-n junction and principal component analysis of PV signals allows identifying mentioned liquid substances and their mixtures.

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

NASA Astrophysics Data System (ADS)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

A MEMS-based Air Flow Sensor with a Free-standing Micro-cantilever Structure

PubMed Central

Wang, Yu-Hsiang; Lee, Chia-Yen; Chiang, Che-Ming

2007-01-01

This paper presents a micro-scale air flow sensor based on a free-standing cantilever structure. In the fabrication process, MEMS techniques are used to deposit a silicon nitride layer on a silicon wafer. A platinum layer is deposited on the silicon nitride layer to form a piezoresistor, and the resulting structure is then etched to create a freestanding micro-cantilever. When an air flow passes over the surface of the cantilever beam, the beam deflects in the downward direction, resulting in a small variation in the resistance of the piezoelectric layer. The air flow velocity is determined by measuring the change in resistance using an external LCR meter. The experimental results indicate that the flow sensor has a high sensitivity (0.0284 Ω/ms-1), a high velocity measurement limit (45 ms-1) and a rapid response time (0.53 s). PMID:28903233

Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy

PubMed Central

Li, Chuang; Cordovilla, Francisco; Jagdheesh, R.

2018-01-01

This paper presents a novel structural piezoresistive pressure sensor with four-grooved membrane combined with rood beam to measure low pressure. In this investigation, the design, optimization, fabrication, and measurements of the sensor are involved. By analyzing the stress distribution and deflection of sensitive elements using finite element method, a novel structure featuring high concentrated stress profile (HCSP) and locally stiffened membrane (LSM) is built. Curve fittings of the mechanical stress and deflection based on FEM simulation results are performed to establish the relationship between mechanical performance and structure dimension. A combination of FEM and curve fitting method is carried out to determine the structural dimensions. The optimized sensor chip is fabricated on a SOI wafer by traditional MEMS bulk-micromachining and anodic bonding technology. When the applied pressure is 1 psi, the sensor achieves a sensitivity of 30.9 mV/V/psi, a pressure nonlinearity of 0.21% FSS and an accuracy of 0.30%, and thereby the contradiction between sensitivity and linearity is alleviated. In terms of size, accuracy and high temperature characteristic, the proposed sensor is a proper choice for measuring pressure of less than 1 psi. PMID:29393916

Chip-to-chip SnO2 nanowire network sensors for room temperature H2 detection

NASA Astrophysics Data System (ADS)

Köck, A.; Brunet, E.; Mutinati, G. C.; Maier, T.; Steinhauer, S.

2012-06-01

The employment of nanowires is a very powerful strategy to improve gas sensor performance. We demonstrate a gas sensor device, which is based on silicon chip-to-chip synthesis of ultralong tin oxide (SnO2) nanowires. The sensor device employs an interconnected SnO2 nanowire network configuration, which exhibits a huge surface-to-volume ratio and provides full access of the target gas to the nanowires. The chip-to-chip SnO2 nanowire device is able to detect a H2 concentration of only 20 ppm in synthetic air with ~ 60% relative humidity at room temperature. At an operating temperature of 300°C a concentration of 50 ppm H2 results in a sensitivity of 5%. At this elevated temperature the sensor shows a linear response in a concentration range between 10 ppm and 100 ppm H2. The SnO2-nanowire fabrication procedure based on spray pyrolysis and subsequent annealing is performed at atmospheric pressure, requires no vacuum and allows upscale of the substrate to a wafer size. 3D-integration with CMOS chips is proposed as viable way for practical realization of smart nanowire based gas sensor devices for the consumer market.

Controlled Aeroelastic Response and Airfoil Shaping Using Adaptive Materials and Integrated Systems

NASA Technical Reports Server (NTRS)

Pinkerton, Jennifer L.; McGowan, Anna-Maria R.; Moses, Robert W.; Scott, Robert C.; Heeg, Jennifer

1996-01-01

This paper presents an overview of several activities of the Aeroelasticity Branch at the NASA Langley Research Center in the area of applying adaptive materials and integrated systems for controlling both aircraft aeroelastic response and airfoil shape. The experimental results of four programs are discussed: the Piezoelectric Aeroelastic Response Tailoring Investigation (PARTI); the Adaptive Neural Control of Aeroelastic Response (ANCAR) program; the Actively Controlled Response of Buffet Affected Tails (ACROBAT) program; and the Airfoil THUNDER Testing to Ascertain Characteristics (ATTACH) project. The PARTI program demonstrated active flutter control and significant rcductions in aeroelastic response at dynamic pressures below flutter using piezoelectric actuators. The ANCAR program seeks to demonstrate the effectiveness of using neural networks to schedule flutter suppression control laws. Th,e ACROBAT program studied the effectiveness of a number of candidate actuators, including a rudder and piezoelectric actuators, to alleviate vertical tail buffeting. In the ATTACH project, the feasibility of using Thin-Layer Composite-Uimorph Piezoelectric Driver and Sensor (THUNDER) wafers to control airfoil aerodynamic characteristics was investigated. Plans for future applications are also discussed.

Silicon fiber optic sensors

DOEpatents

Pocha, Michael D.; Swierkowski, Steve P.; Wood, Billy E.

2007-10-02

A Fabry-Perot cavity is formed by a partially or wholly reflective surface on the free end of an integrated elongate channel or an integrated bounding wall of a chip of a wafer and a partially reflective surface on the end of the optical fiber. Such a constructed device can be utilized to detect one or more physical parameters, such as, for example, strain, through the optical fiber using an optical detection system to provide measuring accuracies of less than aboutb0.1%.

Demonstration and Validation of a Portable Raman Sensor for In-Situ Detection and Monitoring of Perchlorate (ClO4 )

DTIC Science & Technology

2017-03-01

was used to expose patterns of ellipse dimer arrays into a ~300 nm thick ZEP520A e-beam resist which had been spin coated on silicon wafers and baked ...prepared from solid NaClO4 salt (anhydrous ACS grade). 2. NaClO4 salt is baked at ~200 °C for at least 12 h and then stored in a desiccator prior to

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Reliable aluminum contact formation by electrostatic bonding

NASA Astrophysics Data System (ADS)

Kárpáti, T.; Pap, A. E.; Radnóczi, Gy; Beke, B.; Bársony, I.; Fürjes, P.

2015-07-01

The paper presents a detailed study of a reliable method developed for aluminum fusion wafer bonding assisted by the electrostatic force evolving during the anodic bonding process. The IC-compatible procedure described allows the parallel formation of electrical and mechanical contacts, facilitating a reliable packaging of electromechanical systems with backside electrical contacts. This fusion bonding method supports the fabrication of complex microelectromechanical systems (MEMS) and micro-opto-electromechanical systems (MOEMS) structures with enhanced temperature stability, which is crucial in mechanical sensor applications such as pressure or force sensors. Due to the applied electrical potential of  -1000 V the Al metal layers are compressed by electrostatic force, and at the bonding temperature of 450 °C intermetallic diffusion causes aluminum ions to migrate between metal layers.

On-chip copper-dielectric interference filters for manufacturing of ambient light and proximity CMOS sensors.

PubMed

Frey, Laurent; Masarotto, Lilian; D'Aillon, Patrick Gros; Pellé, Catherine; Armand, Marilyn; Marty, Michel; Jamin-Mornet, Clémence; Lhostis, Sandrine; Le Briz, Olivier

2014-07-10

Filter technologies implemented on CMOS image sensors for spectrally selective applications often use a combination of on-chip organic resists and an external substrate with multilayer dielectric coatings. The photopic-like and near-infrared bandpass filtering functions respectively required by ambient light sensing and user proximity detection through time-of-flight can be fully integrated on chip with multilayer metal-dielectric filters. Copper, silicon nitride, and silicon oxide are the materials selected for a technological proof-of-concept on functional wafers, due to their immediate availability in front-end semiconductor fabs. Filter optical designs are optimized with respect to specific performance criteria, and the robustness of the designs regarding process errors are evaluated for industrialization purposes.

Performance upgrades in the EUV engineering test stand

NASA Astrophysics Data System (ADS)

Tichenor, Daniel A.; Replogle, William C.; Lee, Sang Hun; Ballard, William P.; Leung, Alvin H.; Kubiak, Glenn D.; Klebanoff, Leonard E.; Graham, Samual, Jr.; Goldsmith, John E. M.; Jefferson, Karen L.; Wronosky, John B.; Smith, Tony G.; Johnson, Terry A.; Shields, Harry; Hale, Layton C.; Chapman, Henry N.; Taylor, John S.; Sweeney, Donald W.; Folta, James A.; Sommargren, Gary E.; Goldberg, Kenneth A.; Naulleau, Patrick P.; Attwood, David T., Jr.; Gullikson, Eric M.

2002-07-01

The EUV Engineering Test Stand (ETS) has demonstrated the printing of 100-nm-resolution scanned images. This milestone was first achieved while the ETS operated in an initial configuration using a low power laser and a developmental projection system, PO Box 1. The drive laser has ben upgraded to a single chain of the three-chain Nd:YAG laser developed by TRW. The result in exposure time is approximately 4 seconds for static exposures. One hundred nanometer dense features have been printed in step-and-scan operation with the same image quality obtained in static printing. These experiments are the first steps toward achieving operation using all three laser chains for a total drive laser power of 1500 watts. In a second major upgrade the developmental wafer stage platen, used to demonstrate initial full-field imaging, has been replaced with the final low-expansion platen made of Zerodur. Additional improvements in the hardware and control software have demonstrated combined x and jitter from 2 to 4 nm RMS Over most of the wafer stage travel range, while scanning at the design scan speed of 10 mm/s at the wafer. This value, less than half of the originally specified jitter, provides sufficient stability to support printing of 70 nm features as planned, when the upgraded projection system is installed. The third major upgrade will replace PO Box 1 with an improved projection system, PO Box 2, having lower figure error and lower flare. In addition to these upgrades, dose sensors at the reticle and wafer planes and an EUV- sensitive aerial image monitor have been integrated into the ETS. This paper reports on ETS system upgrades and the impact on system performance.

Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

2016-11-01

The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

The Design and Optimization of a Highly Sensitive and Overload-Resistant Piezoresistive Pressure Sensor

PubMed Central

Meng, Xiawei; Zhao, Yulong

2016-01-01

A piezoresistive pressure sensor with a beam-membrane-dual-island structure is developed for micro-pressure monitoring in the field of aviation, which requires great sensitivity and overload resistance capacity. The design, fabrication, and test of the sensor are presented in this paper. By analyzing the stress distribution of sensitive elements using the finite element method, a novel structure incorporating sensitive beams with a traditional bossed diaphragm is built up. The proposed structure proved to be advantageous in terms of high sensitivity and high overload resistance compared with the conventional bossed diaphragm and flat diaphragm structures. Curve fittings of surface stress and deflection based on ANSYS simulation results are performed to establish the sensor equations. Fabricated on an n-type single crystal silicon wafer, the sensor chips are wire-bonded to a printed circuit board (PCB) and packaged for experiments. The static and dynamic characteristics are tested and discussed. Experimental results show that the sensor has a sensitivity as high as 17.339 μV/V/Pa in the range of 500 Pa at room temperature, and a high overload resistance of 200 times overpressure. Due to the excellent performance, the sensor can be applied in measuring micro-pressure lower than 500 Pa. PMID:27005627

New dynamic silicon photonic components enabled by MEMS technology

NASA Astrophysics Data System (ADS)

Errando-Herranz, Carlos; Edinger, Pierre; Colangelo, Marco; Björk, Joel; Ahmed, Samy; Stemme, Göran; Niklaus, Frank; Gylfason, Kristinn B.

2018-02-01

Silicon photonics is the study and application of integrated optical systems which use silicon as an optical medium, usually by confining light in optical waveguides etched into the surface of silicon-on-insulator (SOI) wafers. The term microelectromechanical systems (MEMS) refers to the technology of mechanics on the microscale actuated by electrostatic actuators. Due to the low power requirements of electrostatic actuation, MEMS components are very power efficient, making them well suited for dense integration and mobile operation. MEMS components are conventionally also implemented in silicon, and MEMS sensors such as accelerometers, gyros, and microphones are now standard in every smartphone. By combining these two successful technologies, new active photonic components with extremely low power consumption can be made. We discuss our recent experimental work on tunable filters, tunable fiber-to-chip couplers, and dynamic waveguide dispersion tuning, enabled by the marriage of silicon MEMS and silicon photonics.

Mechanical Strength and Broadband Transparency Improvement of Glass Wafers via Surface Nanostructures.

PubMed

Kumar, Amarendra; Kashyap, Kunal; Hou, Max T; Yeh, J Andrew

2016-06-17

In this study, we mechanically strengthened a borosilicate glass wafer by doubling its bending strength and simultaneously enhancing its transparency using surface nanostructures for different applications including sensors, displays and panels. A fabrication method that combines dry and wet etching is used for surface nanostructure fabrication. Specifically, we improved the bending strength of plain borosilicate glass by 96% using these surface nanostructures on both sides. Besides bending strength improvement, a limited optical transmittance enhancement of 3% was also observed in the visible light wavelength region (400-800 nm). Both strength and transparency were improved by using surface nanostructures of 500 nm depth on both sides of the borosilicate glass without affecting its bulk properties or the glass manufacturing process. Moreover, we observed comparatively smaller fragments during the breaking of the nanostructured glass, which is indicative of strengthening. The range for the nanostructure depth is defined for different applications with which improvements of the strength and transparency of borosilicate glass substrate are obtained.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, A.M.

1995-03-07

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

Investigation of baseline measurement resolution of a Si plate-based extrinsic Fabry-Perot interferometer

NASA Astrophysics Data System (ADS)

Ushakov, Nikolai; Liokumovich, Leonid

2014-05-01

Measurement of a wafer thickness is of a great value for fabrication and interrogation of MEMS/MOEMS devices, as well as conventional optical fiber sensors. In the current paper we investigate the abilities of the wavelength-scanning interferometry techniques for registering the baseline of an extrinsic fiber Fabry-Perot interferometer (EFPI) with the cavity formed by the two sides of a silicon plate. In order to enhance the resolution, an improved signal processing algorithm was developed. Various experiments, including contact and non-contact measurement of a silicon wafer thickness were performed, with the achieved resolutions from 10 to 20 pm. This enables one to use the described approach for high-precision measurement of geometric parameters of micro electro (electro-optic) mechanical systems for their characterization, utilization in sensing tasks and fabrication control. An ability of a Si plate-based EFPI interrogated by the developed technique to capture temperature variations of about 4 mK was demonstrated.

Liquid crystal uncooled thermal imager development

NASA Astrophysics Data System (ADS)

Clark, H. R.; Bozler, C. O.; Berry, S. R.; Reich, R. K.; Bos, P. J.; Finnemeyer, V. A.; Bryant, D. R.; McGinty, C.

2016-09-01

An uncooled thermal imager is being developed based on a liquid crystal (LC) transducer. Without any electrical connections, the LC transducer pixels change the long-wavelength infrared (LWIR) scene directly into a visible image as opposed to an electric signal in microbolometers. The objectives are to develop an imager technology scalable to large formats (tens of megapixels) while maintaining or improving the noise equivalent temperature difference (NETD) compared to microbolometers. The present work is demonstrating that the LCs have the required performance (sensitivity, dynamic range, speed, etc.) to enable a more flexible uncooled imager. Utilizing 200-mm wafers, a process has been developed and arrays have been fabricated using aligned LCs confined in 20×20-μm cavities elevated on thermal legs. Detectors have been successfully fabricated on both silicon and fused silica wafers using less than 10 photolithographic mask steps. A breadboard camera system has been assembled to test the imagers. Various sensor configurations are described along with advantages and disadvantages of component arrangements.

Mechanical Strength and Broadband Transparency Improvement of Glass Wafers via Surface Nanostructures

PubMed Central

Kumar, Amarendra; Kashyap, Kunal; Hou, Max T.; Yeh, J. Andrew

2016-01-01

In this study, we mechanically strengthened a borosilicate glass wafer by doubling its bending strength and simultaneously enhancing its transparency using surface nanostructures for different applications including sensors, displays and panels. A fabrication method that combines dry and wet etching is used for surface nanostructure fabrication. Specifically, we improved the bending strength of plain borosilicate glass by 96% using these surface nanostructures on both sides. Besides bending strength improvement, a limited optical transmittance enhancement of 3% was also observed in the visible light wavelength region (400–800 nm). Both strength and transparency were improved by using surface nanostructures of 500 nm depth on both sides of the borosilicate glass without affecting its bulk properties or the glass manufacturing process. Moreover, we observed comparatively smaller fragments during the breaking of the nanostructured glass, which is indicative of strengthening. The range for the nanostructure depth is defined for different applications with which improvements of the strength and transparency of borosilicate glass substrate are obtained. PMID:27322276

Dual-Use Transducer for Use with a Boundary-Stiffened Panel and Method of Using the Same

NASA Technical Reports Server (NTRS)

Schiller, Noah H. (Inventor); Cabell, Randolph H. (Inventor)

2011-01-01

A transducer for use with a boundary-stiffened panel has an inter-digitated electrode (IDE) and a piezoelectric wafer portion positioned therebetween. The IDE and/or the wafer portion are triangular, with one edge or side aligned with a boundary edge of the panel. The transducer generates and transmits an output force to the panel in response to an input voltage signal from a sensor, which can be another transducer as described above or an accelerometer. A controller can generate an output force signal in response to the input voltage signal to help cancel the input voltage signal. A method of using the transducer minimizes vibration in the panel by connecting multiple transducers around a perimeter thereof. Motion is measured at different portions of the panel, and a voltage signal determined from the motion is transmitted to the transducers to generate an output force at least partially cancelling or damping the motion.

Optical inspection of hidden MEMS structures

NASA Astrophysics Data System (ADS)

Krauter, Johann; Gronle, Marc; Osten, Wolfgang

2017-06-01

Micro-electro-mechanical system's (MEMS) applications have greatly expanded over the recent years, and the MEMS industry has grown almost exponentially. One of the strongest drivers are the automotive and consumer markets. A 100% test is necessary especially in the production of automotive MEMS sensors since they are subject to safety relevant functions. This inspection should be carried out before dicing and packaging since more than 90% of the production costs are incurred during these steps. An electrical test is currently being carried out with each MEMS component. In the case of a malfunction, the defect can not be located on the wafer because the MEMS are no longer optically accessible due to the encapsulation. This paper presents a low coherence interferometer for the topography measurement of MEMS structures located within the wafer stack. Here, a high axial and lateral resolution is necessary to identify defects such as stuck or bent MEMS fingers. First, the boundary conditions for an optical inspection system will be discussed. The setup is then shown with some exemplary measurements.

High aspect ratio nano-fabrication of photonic crystal structures on glass wafers using chrome as hard mask.

PubMed

Hossain, Md Nazmul; Justice, John; Lovera, Pierre; McCarthy, Brendan; O'Riordan, Alan; Corbett, Brian

2014-09-05

Wafer-scale nano-fabrication of silicon nitride (Si x N y ) photonic crystal (PhC) structures on glass (quartz) substrates is demonstrated using a thin (30 nm) chromium (Cr) layer as the hard mask for transferring the electron beam lithography (EBL) defined resist patterns. The use of the thin Cr layer not only solves the charging effect during the EBL on the insulating substrate, but also facilitates high aspect ratio PhCs by acting as a hard mask while deep etching into the Si x N y . A very high aspect ratio of 10:1 on a 60 nm wide grating structure has been achieved while preserving the quality of the flat top of the narrow lines. The presented nano-fabrication method provides PhC structures necessary for a high quality optical response. Finally, we fabricated a refractive index based PhC sensor which shows a sensitivity of 185 nm per RIU.

Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

NASA Technical Reports Server (NTRS)

Papapolymerou, Ioannis John

2004-01-01

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Advances in Sensors and Their Integration into Aircraft Guidance and Control Systems,

DTIC Science & Technology

1983-06-01

this function taking account of the limitations of the existing air- craft systems such as:- (a) Cockpit space (b) use of existing controls particularly...electrostatically focused under the influence of high potentials to form an electron image on a thin silicon wafer target upon which a very tightly spaced ...matrix of p-n junctions have been formed. The spacing of the diodes is of the order of n m. A gain mechanism is caused because the photo electrons

Digital Platform for Wafer-Level MEMS Testing and Characterization Using Electrical Response

PubMed Central

Brito, Nuno; Ferreira, Carlos; Alves, Filipe; Cabral, Jorge; Gaspar, João; Monteiro, João; Rocha, Luís

2016-01-01

The uniqueness of microelectromechanical system (MEMS) devices, with their multiphysics characteristics, presents some limitations to the borrowed test methods from traditional integrated circuits (IC) manufacturing. Although some improvements have been performed, this specific area still lags behind when compared to the design and manufacturing competencies developed over the last decades by the IC industry. A complete digital solution for fast testing and characterization of inertial sensors with built-in actuation mechanisms is presented in this paper, with a fast, full-wafer test as a leading ambition. The full electrical approach and flexibility of modern hardware design technologies allow a fast adaptation for other physical domains with minimum effort. The digital system encloses a processor and the tailored signal acquisition, processing, control, and actuation hardware control modules, capable of the structure position and response analysis when subjected to controlled actuation signals in real time. The hardware performance, together with the simplicity of the sequential programming on a processor, results in a flexible and powerful tool to evaluate the newest and fastest control algorithms. The system enables measurement of resonant frequency (Fr), quality factor (Q), and pull-in voltage (Vpi) within 1.5 s with repeatability better than 5 ppt (parts per thousand). A full-wafer with 420 devices under test (DUTs) has been evaluated detecting the faulty devices and providing important design specification feedback to the designers. PMID:27657087

Digital Platform for Wafer-Level MEMS Testing and Characterization Using Electrical Response.

PubMed

Brito, Nuno; Ferreira, Carlos; Alves, Filipe; Cabral, Jorge; Gaspar, João; Monteiro, João; Rocha, Luís

2016-09-21

The uniqueness of microelectromechanical system (MEMS) devices, with their multiphysics characteristics, presents some limitations to the borrowed test methods from traditional integrated circuits (IC) manufacturing. Although some improvements have been performed, this specific area still lags behind when compared to the design and manufacturing competencies developed over the last decades by the IC industry. A complete digital solution for fast testing and characterization of inertial sensors with built-in actuation mechanisms is presented in this paper, with a fast, full-wafer test as a leading ambition. The full electrical approach and flexibility of modern hardware design technologies allow a fast adaptation for other physical domains with minimum effort. The digital system encloses a processor and the tailored signal acquisition, processing, control, and actuation hardware control modules, capable of the structure position and response analysis when subjected to controlled actuation signals in real time. The hardware performance, together with the simplicity of the sequential programming on a processor, results in a flexible and powerful tool to evaluate the newest and fastest control algorithms. The system enables measurement of resonant frequency (Fr), quality factor (Q), and pull-in voltage (Vpi) within 1.5 s with repeatability better than 5 ppt (parts per thousand). A full-wafer with 420 devices under test (DUTs) has been evaluated detecting the faulty devices and providing important design specification feedback to the designers.

Quantum-Well Infrared Photodetector (QWIP) Focal Plane Assembly

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Jhabvala, Christine A.; Ewin, Audrey J.; Hess, Larry A.; Hartmann, Thomas M.; La, Anh T.

2012-01-01

A paper describes the Thermal Infrared Sensor (TIRS), a QWIP-based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a far-infrared imager operating in the pushbroom mode with two IR channels: 10.8 and 12 microns. The focal plane will contain three 640x512 QWIP arrays mounted on a silicon substrate. The silicon substrate is a custom-fabricated carrier board with a single layer of aluminum interconnects. The general fabrication process starts with a 4-in. (approx.10-cm) diameter silicon wafer. The wafer is oxidized, a single substrate contact is etched, and aluminum is deposited, patterned, and alloyed. This technology development is aimed at incorporating three large-format infrared detecting arrays based on GaAs QWIP technology onto a common focal plane with precision alignment of all three arrays. This focal plane must survive the rigors of flight qualification and operate at a temperature of 43 K (-230 C) for five years while orbiting the Earth. The challenges presented include ensuring thermal compatibility among all the components, designing and building a compact, somewhat modular system and ensuring alignment to very tight levels. The multi-array focal plane integrated onto a single silicon substrate is a new application of both QWIP array development and silicon wafer scale integration. The Invar-based assembly has been tested to ensure thermal reliability.

3D-profile measurement of advanced semiconductor features by using FIB as reference metrology

NASA Astrophysics Data System (ADS)

Takamasu, Kiyoshi; Iwaki, Yuuki; Takahashi, Satoru; Kawada, Hiroki; Ikota, Masami

2017-03-01

A novel method of sub-nanometer uncertainty for the 3D-profile measurement and LWR (Line Width Roughness) measurement by using FIB (Focused Ion Beam) processing, and TEM (Transmission Electron Microscope) and CD-SEM (Critical Dimension Scanning Electron Microscope) images measurement is proposed to standardize 3D-profile measurement through reference metrology. In this article, we apply the methodology to line profile measurements and roughness measurement of advanced FinFET (Fin-shaped Field-Effect Transistor) features. The FinFET features are horizontally sliced as a thin specimen by FIB micro sampling system. Horizontally images of the specimens are obtained then by a planar TEM. LWR is calculated from the edges positions on TEM images. Moreover, we already have demonstrated the novel on-wafer 3D-profile metrology as "FIB-to-CDSEM method" with FIB slope cut and CD-SEM measuring. Using the method, a few micrometers wide on a wafer is coated and cut by 45-degree slope using FIB tool. Then, the wafer is transferred to CD-SEM to measure the cross section image by top down CD-SEM measurement. We applied FIB-to-CDSEM method to a CMOS image sensor feature. The 45-degree slope cut surface is observed using AFM. The surface profile of slope cut surface and line profiles are analyzed for improving the accuracy of FIB-to-CDSEM method.

Numerical investigations of the potential for laser focus sensors in micrometrology

NASA Astrophysics Data System (ADS)

Bischoff, Jörg; Mastylo, Rostyslav; Manske, Eberhard

2017-06-01

Laser focus sensors (LFS)1 attached to a scanning nano-positioning and measuring machine (NPMM) enable near diffraction limit resolution with very large measuring areas up to 200 x 200 mm1. Further extensions are planned to address wafer sizes of 8 inch and beyond. Thus, they are preferably suited for micro-metrology on large wafers. On the other hand, the minimum lateral features in state-of-the-art semiconductor industry are as small as a few nanometer and therefore far beyond the resolution limits of classical optics. New techniques such as OCD or ODP3,4 a.k.a. as scatterometry have helped to overcome these constraints considerably. However, scatterometry relies on regular patterns and therefore, the measurements have to be performed on special reference gratings or boxes rather than in-die. Consequently, there is a gap between measurement and the actual structure of interest which becomes more and more an issues with shrinking feature sizes. On the other hand, near-field approaches would also allow to extent the resolution limit greatly5 but they require very challenging controls to keep the working distance small enough to stay within the near field zone. Therefore, the feasibility and the limits of a LFS scanner system have been investigated theoretically. Based on simulations of laser focus sensor scanning across simple topographies, it was found that there is potential to overcome the diffraction limitations to some extent by means of vicinity interference effects caused by the optical interaction of adjacent topography features. We think that it might be well possible to reconstruct the diffracting profile by means of rigorous diffraction simulation based on a thorough model of the laser focus sensor optics in combination with topography diffraction 6 in a similar way as applied in OCD. The difference lies in the kind of signal itself which has to be modeled. While standard OCD is based on spectra, LFS utilizes height scan signals. Simulation results are presented for different types of topographies (dense vs. sparse, regular vs. single) with lateral features near and beyond the classical resolution limit. Moreover, the influence of topography height on the detectability is investigated. To this end, several sensor principles and polarization setups are considered such as a dual color pin hole sensor and a Foucault knife sensor. It is shown that resolution beyond the Abbe or Rayleigh limit is possible even with "classical" optical setups when combining measurements with sophisticated profile retrieval techniques and some a-priori knowledge. Finally, measurement uncertainties are derived based on perturbation simulations according to the method presented in 7.

Implementation of activity-based costing (ABC) to drive cost reduction efforts in a semiconductor manufacturing operation

NASA Astrophysics Data System (ADS)

Naguib, Hussein; Bol, Igor I.; Lora, J.; Chowdhry, R.

1994-09-01

This paper presents a case study on the implementation of ABC to calculate the cost per wafer and to drive cost reduction efforts for a new IC product line. The cost reduction activities were conducted through the efforts of 11 cross-functional teams which included members of the finance, purchasing, technology development, process engineering, equipment engineering, production control, and facility groups. The activities of these cross functional teams were coordinated by a cost council. It will be shown that these activities have resulted in a 57% reduction in the wafer manufacturing cost of the new product line. Factors contributed to successful implementation of an ABC management system are discussed.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

NASA Technical Reports Server (NTRS)

Li, Jing; Lu, Yijiang

2005-01-01

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

Solution-based analysis of multiple analytes by a sensor array: toward the development of an electronic tongue

NASA Astrophysics Data System (ADS)

Savoy, Steven M.; Lavigne, John J.; Yoo, J. S.; Wright, John; Rodriguez, Marc; Goodey, Adrian; McDoniel, Bridget; McDevitt, John T.; Anslyn, Eric V.; Shear, Jason B.; Ellington, Andrew D.; Neikirk, Dean P.

1998-12-01

A micromachined sensor array has been developed for the rapid characterization of multi-component mixtures in aqueous media. The sensor functions in a manner analogous to that of the mammalian tongue, using an array composed of individually immobilized polystyrene-polyethylene glycol composite microspheres selectively arranged in micromachined etch cavities localized o n silicon wafers. Sensing occurs via colorimetric or fluorometric changes to indicator molecules that are covalently bound to amine termination sites on the polymeric microspheres. The hybrid micromachined structure has been interfaced directly to a charged-coupled-device that is used for the simultaneous acquisition of the optical data from the individually addressable `taste bud' elements. With the miniature sensor array, acquisition of data streams composed of red, green, and blue color patterns distinctive for the analytes in the solution are rapidly acquired. The unique combination of carefully chosen reporter molecules with water permeable microspheres allows for the simultaneous detection and quantification of a variety of analytes. The fabrication of the sensor structures and the initial colorimetric and fluorescent responses for pH, Ca+2, Ce+3, and sugar are reported. Interface to microfluidic components should also be possible, producing a complete sampling/sensing system.

Active high-power RF switch and pulse compression system

DOEpatents

Tantawi, Sami G.; Ruth, Ronald D.; Zolotorev, Max

1998-01-01

A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

PubMed

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-11-04

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

PubMed Central

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-01-01

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

Behavior of piezoelectric wafer active sensor in various media

NASA Astrophysics Data System (ADS)

Kamas, Tuncay

The dissertation addresses structural health monitoring (SHM) techniques using ultrasonic waves generated by piezoelectric wafer active sensors (PWAS) with an emphasis on the development of theoretical models of standing harmonic waves and guided waves. The focal objective of the research is to extend the theoretical study of electro-mechanical coupled PWAS as a resonator/transducer that interacts with standing and traveling waves in various media through electro-mechanical impedance spectroscopy (EMIS) method and guided wave propagation. The analytical models are developed and the coupled field finite element analysis (CF-FEA) models are simulated and verified with experiments. The dissertation is divided into two parts with respect to the developments in EMIS methods and GWP methods. In the first part, analytical and finite element models have been developed for the simulation of PWAS-EMIS in in-plane (longitudinal) and out-of-plane (thickness) mode. Temperature effects on free PWAS-EMIS are also discussed with respect to the in-plane mode. Piezoelectric material degradation on certain electrical and mechanical properties as the temperature increases is simulated by our analytical model for in-plane circular PWAS-EMIS that agrees well with the sets of experiments. Then the thickness mode PWAS-EMIS model was further developed for a PWAS resonator bonded on a plate-like structure. The latter analytical model was to determine the resonance frequencies for the normal mode expansion method through the global matrix method by considering PWAS-substrate and proof mass-PWAS-substrate models. The proof mass concept was adapted to shift the systems resonance frequencies in thickness mode. PWAS in contact with liquid medium on one of its surface has been analytically modeled and simulated the electro-mechanical response of PWAS with various liquids with different material properties such as the density and the viscosity. The second part discusses the guided wave propagation in elastic structures. The feature guided waves in thick structures and in high frequency range are discussed considering weld guided quasi-Rayleigh waves. Furthermore, the weld guided quasi Rayleigh waves and their interaction with damages in thick plates and thick walled pipes are examined by the finite element models and experiments. The dissertation finishes with a summary of contributions followed by conclusions, and suggestions for future work.

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

NASA Astrophysics Data System (ADS)

Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

2017-07-01

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

Single-order, subwavelength resonant nanograting as a uniformly hot substrate for surface-enhanced Raman spectroscopy.

PubMed

Deng, Xuegong; Braun, Gary B; Liu, Sheng; Sciortino, Paul F; Koefer, Bob; Tombler, Thomas; Moskovits, Martin

2010-05-12

The surface-enhanced Raman spectroscopy (SERS) activity and the optical reflectance of a subwavelength gold nanograting fabricated entirely using top down technologies on silicon wafers are presented. The grating consists of 120 nm gold cladding on top of parallel silica nanowires constituting the grating's lines, with gaps between nanowires <10 nm wide at their narrowest point. The grating produces inordinately intense SERS and shows very strong polarization dependence. Reflectance measurements for the optimized grating indicate that (when p-polarization is used and at least one of the incident electric field components lies across the grating lines) the reflectance drops to <1% at resonance, indicating that essentially all of the radiant energy falling on the surface is coupled into the grating. The SERS intensity and the reflectance at resonance anticorrelate predicatively, suggesting that reflectance measurements can provide a nondestructive, wafer-level test of SERS efficacy. The SERS performance of the gratings is very uniform and reproducible. Extensive measurements on samples cut from both the same wafer and from different wafers, produce a SERS intensity distribution function that is similar to that obtained for ordinary Raman measurements carried out at multiple locations on a polished (100) silicon wafer.

IR-Sensography™—expanding the scope of contact-free sensing methods

NASA Astrophysics Data System (ADS)

Klein, Jens; Schunk, Stephan A.

2005-01-01

Capturing the response of one or more sensor materials is conventionally performed by the direct transformation of a chemical or physico-chemical signal into an electrical one. With an increasing number of sensor materials within an arrangement of sensor elements or a sensor array, problems such as contacting each single sensor, signal processing and resistance against cross-talk, harsh conditions such as corrosive atmospheres, etc are limiting factors for the further development of so-called 'chemical noses'. State-of-the-art and commercially available are arrays of eight different sensor materials, literature known in another context are sensor arrays with 256 materials on a silicon wafer, which are contacted via electrical conduits. We present here the concept of the IR-Sensography™, the use of an IR-camera as an external detector system for sensor libraries. Acting like an optical detection method, the IR-camera detects small temperature changes due to physisorption, chemisorption or other forms of interaction or reaction as an output signal in the form of radiation emitted by the multiplicity of sensor materials simultaneously. The temperature resolution of commercially available IR-camera systems can be tuned to the range below 0.1 K. Due to the separation of sensors and the detector device, reaction conditions at the sensor locus can be adapted to the analytical problem and do not need to take care of other boundary conditions which come into play with the analytical device, e.g. the IR-camera. Calibration or regeneration steps can as well be performed over the multiplicity of all sensor materials. Any given chemical compound that comes into contact with the sensor through the passing fluids will result in a specific activity pattern on a spatially fixed library of sensor materials that is unique for the given compound. While the pattern therefore serves as an identifier, the intensity of the pattern represents the quantitative amount of this compound in the mixture. For proof-of-concept experiments we used a 96-fold-sensing device. The sensor library consists of seven different material classes, all synthesized via classical impregnation techniques in different compositions on multihole monolithic ceramic supports (93 different materials based on different concentrations of binary/ternary mixtures of transition metals, three inert materials). We demonstrate with these results the wide range of capabilities for the IR-Sensography™. Both the qualitative and the quantitative determinations of molecules in the gas phase can be performed with this new methodology.

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

NASA Technical Reports Server (NTRS)

Denis, K. L.; Ali, A.; Appel, J.; Bennett, C. L.; Chang, M. P.; Chuss, D. T.; Colazo, F. A.; Costen, N.; Essinger-Hileman, T.; Hu, R.;

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

Within-wafer CD variation induced by wafer shape

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2016-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer PEB temperature non-uniformity attributed to wafer warpage is uncorrectable, and the photo-resist profile variation is believed to affect across-wafer etch bias uniformity to some degree.

Improved delivery of the anticancer agent citral using BSA nanoparticles and polymeric wafers.

PubMed

White, Benjamin; Evison, Anna; Dombi, Eszter; Townley, Helen E

2017-01-01

Rhabdomyosarcoma (RMS) is the most common soft tissue sarcoma in children, with a 5-year survival rate of between 30 and 65%. Standard treatment involves surgery, radiation treatment, and chemotherapy. However, there is a high recurrence rate, particularly from locoregional spread. We investigated the use of the natural compound citral (3,7-dimethyl-2,6-octadienal), which can be found in a number of plants, but is particularly abundant in lemon grass ( Cymbopogon citratus ) oil, for activity against immortalized RMS cells. Significant cancer cell death was seen at concentrations above 150 μM citral, and mitochondrial morphological changes were seen after incubation with 10 μM citral. However, since citral is a highly volatile molecule, we prepared albumin particles by a desolvation method to encapsulate citral, as a means of stabilization. We then further incorporated the loaded nanoparticles into a biodegradable polyanhydride wafer to generate a slow release system. The wafers were shown to degrade by 50% over the course of 25 days and to release the active compound. We therefore propose the use of the citral-nanoparticle-polymer wafers for implantation into the tumor bed after surgical removal of a sarcoma as a means to control locoregional spread due to any remaining cancerous cells.

Improved delivery of the anticancer agent citral using BSA nanoparticles and polymeric wafers

PubMed Central

White, Benjamin; Evison, Anna; Dombi, Eszter; Townley, Helen E

2017-01-01

Rhabdomyosarcoma (RMS) is the most common soft tissue sarcoma in children, with a 5-year survival rate of between 30 and 65%. Standard treatment involves surgery, radiation treatment, and chemotherapy. However, there is a high recurrence rate, particularly from locoregional spread. We investigated the use of the natural compound citral (3,7-dimethyl-2,6-octadienal), which can be found in a number of plants, but is particularly abundant in lemon grass (Cymbopogon citratus) oil, for activity against immortalized RMS cells. Significant cancer cell death was seen at concentrations above 150 μM citral, and mitochondrial morphological changes were seen after incubation with 10 μM citral. However, since citral is a highly volatile molecule, we prepared albumin particles by a desolvation method to encapsulate citral, as a means of stabilization. We then further incorporated the loaded nanoparticles into a biodegradable polyanhydride wafer to generate a slow release system. The wafers were shown to degrade by 50% over the course of 25 days and to release the active compound. We therefore propose the use of the citral-nanoparticle-polymer wafers for implantation into the tumor bed after surgical removal of a sarcoma as a means to control locoregional spread due to any remaining cancerous cells. PMID:29263655

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

NASA Astrophysics Data System (ADS)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Wafer screening device and methods for wafer screening

DOEpatents

Sopori, Bhushan; Rupnowski, Przemyslaw

2014-07-15

Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks--microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers--a stress that mimics the highest stress during cell/module processing. If a wafer survives this stress, it has a high probability of surviving without breakage during cell/module fabrication. Based on this, we have developed a high throughput, noncontact method for applying a predetermined stress to a wafer. The wafers are carried on a belt through a chamber that illuminates the wafer with an intense light of a predetermined intensity distribution that can be varied by changing the power to the light source. As the wafers move under the light source, each wafer undergoes a dynamic temperature profile that produces a preset elastic stress. If this stress exceeds the wafer strength, the wafer will break. The broken wafers are separated early, eliminating cost of processing into cell/module. We will describe details of the system and show comparison of breakage statistics with the breakage on a production line.

Vision Sensors and Cameras

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Silicon charge-coupled-device (CCD) imagers have been and are a specialty market ruled by a few companies for decades. Based on CMOS technologies, active-pixel sensors (APS) began to appear in 1990 at the 1 μm technology node. These pixels allow random access, global shutters, and they are compatible with focal-plane imaging systems combining sensing and first-level image processing. The progress towards smaller features and towards ultra-low leakage currents has provided reduced dark currents and μm-size pixels. All chips offer Mega-pixel resolution, and many have very high sensitivities equivalent to ASA 12.800. As a result, HDTV video cameras will become a commodity. Because charge-integration sensors suffer from a limited dynamic range, significant processing effort is spent on multiple exposure and piece-wise analog-digital conversion to reach ranges >10,000:1. The fundamental alternative is log-converting pixels with an eye-like response. This offers a range of almost a million to 1, constant contrast sensitivity and constant colors, important features in professional, technical and medical applications. 3D retino-morphic stacking of sensing and processing on top of each other is being revisited with sub-100 nm CMOS circuits and with TSV technology. With sensor outputs directly on top of neurons, neural focal-plane processing will regain momentum, and new levels of intelligent vision will be achieved. The industry push towards thinned wafers and TSV enables backside-illuminated and other pixels with a 100% fill-factor. 3D vision, which relies on stereo or on time-of-flight, high-speed circuitry, will also benefit from scaled-down CMOS technologies both because of their size as well as their higher speed.

Multi-spot porous silicon chip prepared from asymmetric electrochemical etching for human immunoglobin G sensor.

PubMed

Um, Sungyong; Cho, Bomin; Woo, Hee-Gweon; Sohn, Honglae

2011-08-01

Multi-spot porous silicon (MSPS)-based optical biosensor was developed to specify the biomolecules. MSPS chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon. MSPS prepared from anisotropic etching conditions displayed the Fabry-Pérot fringe patterns which varied spatially across the porous silicon (PS). Each spot displayed different reflection resonances and different pore characteristics as a function of the lateral distance from the Pt counter electrode. The sensor system consists of the 3 x 3 spot array of porous silicon modified with Protein A. The system was probed with various fragments of an aqueous Human Immunoglobin G (Ig G) analyte. The sensor operated by measurement of the reflection patterns in the white light reflection spectrum of MSPS. Molecular binding and specificity was detected as a shift in wavelength of these Fabry-Pérot fringe patterns.

Thermal Hysteresis of MEMS Packaged Capacitive Pressure Sensor (CPS) Based 3C-SiC

NASA Astrophysics Data System (ADS)

Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

2016-11-01

Presented herein are the effects of thermal hysteresis analyses of the MEMS packaged capacitive pressure sensor (CPS). The MEMS CPS was employed on Si-on-3C-SiC wafer that was performed using the hot wall low-pressure chemical vapour deposition (LPCVD) reactors at the Queensland Micro and Nanotechnology Center (QMNC), Griffith University and fabricated using the bulk-micromachining process. The MEMS CPS was operated at an extreme temperature up to 500°C and high external pressure at 5.0 MPa. The thermal hysteresis phenomenon that causes the deflection, strain and stress on the 3C-SiC diaphragm spontaneously influence the MEMS CPS performances. The differences of temperature, hysteresis, and repeatability test were presented to demonstrate the functionality of the MEMS packaged CPS. As expected, the output hysteresis has a low hysteresis (less than 0.05%) which has the hardness greater than the traditional silicon. By utilizing this low hysteresis, it was revealed that the MEMS packaged CPS has high repeatability and stability of the sensor.

Wafer-scale growth of VO2 thin films using a combinatorial approach

PubMed Central

Zhang, Hai-Tian; Zhang, Lei; Mukherjee, Debangshu; Zheng, Yuan-Xia; Haislmaier, Ryan C.; Alem, Nasim; Engel-Herbert, Roman

2015-01-01

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that ‘electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems. PMID:26450653

Early Damage Detection in Composites during Fabrication and Mechanical Testing.

PubMed

Chandarana, Neha; Sanchez, Daniel Martinez; Soutis, Constantinos; Gresil, Matthieu

2017-06-22

Fully integrated monitoring systems have shown promise in improving confidence in composite materials while reducing lifecycle costs. A distributed optical fibre sensor is embedded in a fibre reinforced composite laminate, to give three sensing regions at different levels through-the-thickness of the plate. This study follows the resin infusion process during fabrication of the composite, monitoring the development of strain in-situ and in real time, and to gain better understanding of the resin rheology during curing. Piezoelectric wafer active sensors and electrical strain gauges are bonded to the plate after fabrication. This is followed by progressive loading/unloading cycles of mechanical four point bending. The strain values obtained from the optical fibre are in good agreement with strain data collected by surface mounted strain gauges, while the sensing regions clearly indicate the development of compressive, neutral, and tensile strain. Acoustic emission event detection suggests the formation of matrix (resin) cracks, with measured damage event amplitudes in agreement with values reported in published literature on the subject. The Felicity ratio for each subsequent loading cycle is calculated to track the progression of damage in the material. The methodology developed here can be used to follow the full life cycle of a composite structure, from manufacture to end-of-life.

Early Damage Detection in Composites during Fabrication and Mechanical Testing

PubMed Central

Chandarana, Neha; Sanchez, Daniel Martinez; Soutis, Constantinos; Gresil, Matthieu

2017-01-01

Fully integrated monitoring systems have shown promise in improving confidence in composite materials while reducing lifecycle costs. A distributed optical fibre sensor is embedded in a fibre reinforced composite laminate, to give three sensing regions at different levels through-the-thickness of the plate. This study follows the resin infusion process during fabrication of the composite, monitoring the development of strain in-situ and in real time, and to gain better understanding of the resin rheology during curing. Piezoelectric wafer active sensors and electrical strain gauges are bonded to the plate after fabrication. This is followed by progressive loading/unloading cycles of mechanical four point bending. The strain values obtained from the optical fibre are in good agreement with strain data collected by surface mounted strain gauges, while the sensing regions clearly indicate the development of compressive, neutral, and tensile strain. Acoustic emission event detection suggests the formation of matrix (resin) cracks, with measured damage event amplitudes in agreement with values reported in published literature on the subject. The Felicity ratio for each subsequent loading cycle is calculated to track the progression of damage in the material. The methodology developed here can be used to follow the full life cycle of a composite structure, from manufacture to end-of-life. PMID:28773048

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

NASA Astrophysics Data System (ADS)

Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.

2018-05-01

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.

Micromachined sensor for stress measurement and micromechanical study of free-standing thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Zhang, Ping

Microelectromechanical systems (MEMS) have a wide range of applications. In the field of wireless and microwave technology, considerable attention has been given to the development and integration of MEMS-based RF (radio frequency) components. An RF MEMS switch requires low insertion loss, high isolation, and low actuation voltage - electrical aspects that have been extensively studied. The mechanical requirements of the switch, such as low sensitivity to built-in stress and high reliability, greatly depend on the micromechanical properties of the switch materials, and have not been thoroughly explored. RF MEMS switches are typically in the form of a free-standing thin film structure. Large stress gradients and across-wafer stress variations developed during fabrication severely degrade their electrical performance. A micromachined stress measurement sensor has been developed that can potentially be employed for in-situ monitoring of stress evolution and stress variation. The sensors were micromachined using five masks on two wafer levels, each measuring 5x3x1 mm. They function by means of an electron tunneling mechanism, where a 2x2 mm silicon nitride membrane elastically deflects under an applied deflection voltage via an external feedback circuitry. For the current design, the sensors are capable of measuring tensile stresses up to the GPa range under deflection voltages of 50--100 V. Sensor functionality was studied by finite element modeling and a theoretical analysis of square membrane deflection. While the mechanical properties of thin films on substrates have been extensively studied, studies of free-standing thin films have been limited due to the practical difficulties in sample handling and testing. Free-standing Al and Al-Ti thin films specimens have been successfully fabricated and microtensile and stress relaxation tests have been performed using a custom-designed micromechanical testing apparatus. A dedicated TEM (transmission electron microscopy) sample preparation technique allows the investigation of the microstructures of these thin films both before and after mechanical testing to correlate the microstructural findings with the mechanical behavior. Major studies include grain boundary strengthening in pure Al, plastic deformation in pure Al by inhomogeneous deformation and localized grain thinning, solid solution and precipitate strengthening in Al-Ti alloys, and stress relaxation of Al and Al-Ti.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

The MEMS process of a micro friction sensor

NASA Astrophysics Data System (ADS)

Yuan, Ming-Quan; Lei, Qiang; Wang, Xiong

2018-02-01

The research and testing techniques of friction sensor is an important support for hypersonic aircraft. Compared with the conventional skin friction sensor, the MEMS skin friction sensor has the advantages of small size, high sensitivity, good stability and dynamic response. The MEMS skin friction sensor can be integrated with other flow field sensors whose process is compatible with MEMS skin friction sensor to achieve multi-physical measurement of the flow field; and the micro-friction balance sensor array enable to achieve large area and accurate measurement for the near-wall flow. A MEMS skin friction sensor structure is proposed, which sensing element not directly contacted with the flow field. The MEMS fabrication process of the sensing element is described in detail. The thermal silicon oxide is used as the mask to solve the selection ratio problem of silicon DRIE. The optimized process parameters of silicon DRIE: etching power 1600W/LF power 100 W; SF6 flux 360 sccm; C4F8 flux 300 sccm; O2 flux 300 sccm. With Cr/Au mask, etch depth of glass shallow groove can be controlled in 30°C low concentration HF solution; the spray etch and wafer rotate improve the corrosion surface quality of glass shallow groove. The MEMS skin friction sensor samples were fabricated by the above MEMS process, and results show that the error of the length and width of the elastic cantilever is within 2 μm, the depth error of the shallow groove is less than 0.03 μm, and the static capacitance error is within 0.2 pF, which satisfy the design requirements.

Preparation of immobilized glucose oxidase wafer enzyme on calcium-bentonite modified by surfactant

NASA Astrophysics Data System (ADS)

Widi, R. K.; Trisulo, D. C.; Budhyantoro, A.; Chrisnasari, R.

2017-07-01

Wafer glucose oxidase (GOx) enzymes was produced by addition of PAH (Poly-Allyamine Hydrochloride) polymer into immobilized GOx enzyme on modified-Tetramethylammonium Hydroxide (TMAH) 5%-calsium-bentonite. The use of surfactant molecul (TMAH) is to modify the surface properties and pore size distribution of the Ca-bentonite. These properties are very important to ensure GOx molecules can be bound on the Ca-bentonit surface to be immobilized. The addition of the polymer (PAH) is expected to lead the substrates to be adsorbed onto the enzyme. In this study, wafer enzymes were made in various concentration ratio (Ca-bentonite : PAH) which are 1:0, 1:1, 1:2 and 1:3. The effect of PAH (Poly-Allyamine Hydrochloride) polymer added with various ratios of concentrations can be shown from the capacitance value on LCR meter and enzyme activity using DNS method. The addition of the polymer (PAH) showed effect on the activity of GOx, it can be shown from the decreasing of capacitance value by increasing of PAH concentration.

Effect of wafer geometry on lithography chucking processes

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Sinha, Jaydeep K.

2015-03-01

Wafer flatness during exposure in lithography tools is critical and is becoming more important as feature sizes in devices shrink. While chucks are used to support and flatten the wafer during exposure, it is essential that wafer geometry be controlled as well. Thickness variations of the wafer and high-frequency wafer shape components can lead to poor flatness of the chucked wafer and ultimately patterning problems, such as defocus errors. The objective of this work is to understand how process-induced wafer geometry, resulting from deposited films with non-uniform stress, can lead to high-frequency wafer shape variations that prevent complete chucking in lithography scanners. In this paper, we discuss both the acceptable limits of wafer shape that permit complete chucking to be achieved, and how non-uniform residual stresses in films, either due to patterning or process non-uniformity, can induce high spatial frequency wafer shape components that prevent chucking. This paper describes mechanics models that relate non-uniform film stress to wafer shape and presents results for two example cases. The models and results can be used as a basis for establishing control strategies for managing process-induced wafer geometry in order to avoid wafer flatness-induced errors in lithography processes.

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

NASA Technical Reports Server (NTRS)

Allen, Christine; Benford, Dominic; Miller, Timothy; Staguhn, Johannes; Wollack, Edward; Moseley, Harvey

2007-01-01

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

New technique for oil backstreaming contamination measurements

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Speier, H. J.; Sieg, R. M.; Drotos, M. N.; Dunning, J. E.

1992-01-01

The backstreaming contamination in the Space Power Facility, Ohio, was measured using small size clean silicon wafers as contamination sensors placed at all measurement sites. Two ellipsometric models were developed to measure the oil film with the contamination film refractive index of DC 705: a continuous, homogeneous film and islands of oil with the islands varying in coverage fraction and height. The island model improved the ellipsometric analysis quality parameter by up to two orders of magnitude. The continuous film model overestimated the oil volume by about 50 percent.

Development of an Uncooled Photomechanic Infrared Sensor Based on the IR Organ of the Pyrophilous Jewel Beetle Melanophila Acuminata

DTIC Science & Technology

2007-01-04

been found to be a suitable means for depositing thin films of chitosan onto the surface of a silicon wafer. A small amount of liquid solution is...response of the system to changes of the meniscus position in the capillary. This was done by gradually filling the working volume with an ionic liquid ...from the wetting of the electrodes by the ionic liquid . From this data we have calculated a signal to noise ratio of 100 for the read out mechanism

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices

NASA Astrophysics Data System (ADS)

Mao, Howard; Alhalaili, Badriyah; Kaya, Ahmet; Dryden, Daniel M.; Woodall, Jerry M.; Islam, M. Saif

2017-08-01

A very simple and inexpensive method for growing β-Ga2O3 films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga2O3 nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga2O3 film and nanowires.

Fabrication and testing of freestanding Si nanogratings for UV filtration on space-based particle sensors.

PubMed

Mukherjee, Pran; Zurbuchen, Thomas H; Guo, L Jay

2009-08-12

We demonstrate complete fabrication process integration and device performance of sturdy, self-supported transmission gratings in silicon. Gratings are patterned with nanoimprint lithography and aluminum liftoff on silicon-on-insulator wafers. Double-sided deep reactive ion etching (DRIE) creates freestanding 120 nm half-pitch gratings with 2000 nm depth and built-in 1 mm pitch bulk silicon support structures. Optical characterization demonstrates 10(-4) transmission of UV in the 190-250 nm band while a 25-30% geometric transparency allows particles to pass unimpeded for space plasma measurements.

Growing Cobalt Silicide Columns In Silicon

NASA Technical Reports Server (NTRS)

Fathauer, Obert W.

1991-01-01

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

NASA Tech Briefs, September 2008

NASA Technical Reports Server (NTRS)

2008-01-01

Topics covered include: Nanotip Carpets as Antireflection Surfaces; Nano-Engineered Catalysts for Direct Methanol Fuel Cells; Capillography of Mats of Nanofibers; Directed Growth of Carbon Nanotubes Across Gaps; High-Voltage, Asymmetric-Waveform Generator; Magic-T Junction Using Microstrip/Slotline Transitions; On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz; Group-III Nitride Field Emitters; HEMT Amplifiers and Equipment for their On-Wafer Testing; Thermal Spray Formation of Polymer Coatings; Improved Gas Filling and Sealing of an HC-PCF; Making More-Complex Molecules Using Superthermal Atom/Molecule Collisions; Nematic Cells for Digital Light Deflection; Improved Silica Aerogel Composite Materials; Microgravity, Mesh-Crawling Legged Robots; Advanced Active-Magnetic-Bearing Thrust- Measurement System; Thermally Actuated Hydraulic Pumps; A New, Highly Improved Two-Cycle Engine; Flexible Structural-Health-Monitoring Sheets; Alignment Pins for Assembling and Disassembling Structures; Purifying Nucleic Acids from Samples of Extremely Low Biomass; Adjustable-Viewing-Angle Endoscopic Tool for Skull Base and Brain Surgery; UV-Resistant Non-Spore-Forming Bacteria From Spacecraft-Assembly Facilities; Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy; Simplified Modeling of Oxidation of Hydrocarbons; Near-Field Spectroscopy with Nanoparticles Deposited by AFM; Light Collimator and Monitor for a Spectroradiometer; Hyperspectral Fluorescence and Reflectance Imaging Instrument; Improving the Optical Quality Factor of the WGM Resonator; Ultra-Stable Beacon Source for Laboratory Testing of Optical Tracking; Transmissive Diffractive Optical Element Solar Concentrators; Delaying Trains of Short Light Pulses in WGM Resonators; Toward Better Modeling of Supercritical Turbulent Mixing; JPEG 2000 Encoding with Perceptual Distortion Control; Intelligent Integrated Health Management for a System of Systems; Delay Banking for Managing Air Traffic; and Spline-Based Smoothing of Airfoil Curvatures.

High throughput wafer defect monitor for integrated metrology applications in photolithography

NASA Astrophysics Data System (ADS)

Rao, Nagaraja; Kinney, Patrick; Gupta, Anand

2008-03-01

The traditional approach to semiconductor wafer inspection is based on the use of stand-alone metrology tools, which while highly sensitive, are large, expensive and slow, requiring inspection to be performed off-line and on a lot sampling basis. Due to the long cycle times and sparse sampling, the current wafer inspection approach is not suited to rapid detection of process excursions that affect yield. The semiconductor industry is gradually moving towards deploying integrated metrology tools for real-time "monitoring" of product wafers during the manufacturing process. Integrated metrology aims to provide end-users with rapid feedback of problems during the manufacturing process, and the benefit of increased yield, and reduced rework and scrap. The approach of monitoring 100% of the wafers being processed requires some trade-off in sensitivity compared to traditional standalone metrology tools, but not by much. This paper describes a compact, low-cost wafer defect monitor suitable for integrated metrology applications and capable of detecting submicron defects on semiconductor wafers at an inspection rate of about 10 seconds per wafer (or 360 wafers per hour). The wafer monitor uses a whole wafer imaging approach to detect defects on both un-patterned and patterned wafers. Laboratory tests with a prototype system have demonstrated sensitivity down to 0.3 µm on un-patterned wafers and down to 1 µm on patterned wafers, at inspection rates of 10 seconds per wafer. An ideal application for this technology is preventing photolithography defects such as "hot spots" by implementing a wafer backside monitoring step prior to exposing wafers in the lithography step.

Post exposure bake unit equipped with wafer-shape compensation technology

NASA Astrophysics Data System (ADS)

Goto, Shigehiro; Morita, Akihiko; Oyama, Kenichi; Hori, Shimpei; Matsuchika, Keiji; Taniguchi, Hideyuki

2007-03-01

In 193nm lithography, it is well known that Critical Dimension Uniformity (CDU) within wafer is especially influenced by temperature variation during Post Exposure Bake (PEB) process. This temperature variation has been considered to be caused by the hot plate unit, and improvement of temperature uniformity within hot plate itself has been focused to achieve higher CDU. However, we have found that the impact of the wafer shape on temperature uniformity within wafer can not be ignored when the conventional PEB processing system is applied to an advanced resist technology. There are two factors concerned with the wafer shape. First, gravity force of the wafer itself generates wafer shape bending because wafer is simply supported by a few proximity gaps on the conventional hot plate. Next, through the semiconductor manufacturing process, wafer is gradually warped due to the difference of the surface stress between silicon and deposited film layers (Ex. Si-Oxide, Si-Nitride). Therefore, the variation of the clearance between wafer backside and hot plate surface leads to non-uniform thermal conductivity within wafer during PEB processing, and eventually impacts on the CDU within wafer. To overcome this problem concerned with wafer shape during PEB processing, we have developed the new hot plate equipped with the wafer shape compensation technology. As a result of evaluation, we have confirmed that this new PEB system has an advantage not only for warped wafer but also for flat (bare) wafer.

Virtual optical interfaces for the transportation industry

NASA Astrophysics Data System (ADS)

Hejmadi, Vic; Kress, Bernard

2010-04-01

We present a novel implementation of virtual optical interfaces for the transportation industry (automotive and avionics). This new implementation includes two functionalities in a single device; projection of a virtual interface and sensing of the position of the fingers on top of the virtual interface. Both functionalities are produced by diffraction of laser light. The device we are developing include both functionalities in a compact package which has no optical elements to align since all of them are pre-aligned on a single glass wafer through optical lithography. The package contains a CMOS sensor which diffractive objective lens is optimized for the projected interface color as well as for the IR finger position sensor based on structured illumination. Two versions are proposed: a version which senses the 2d position of the hand and a version which senses the hand position in 3d.

Chemical sensors fabricated by a photonic integrated circuit foundry

NASA Astrophysics Data System (ADS)

Stievater, Todd H.; Koo, Kee; Tyndall, Nathan F.; Holmstrom, Scott A.; Kozak, Dmitry A.; Goetz, Peter G.; McGill, R. Andrew; Pruessner, Marcel W.

2018-02-01

We describe the detection of trace concentrations of chemical agents using waveguide-enhanced Raman spectroscopy in a photonic integrated circuit fabricated by AIM Photonics. The photonic integrated circuit is based on a five-centimeter long silicon nitride waveguide with a trench etched in the top cladding to allow access to the evanescent field of the propagating mode by analyte molecules. This waveguide transducer is coated with a sorbent polymer to enhance detection sensitivity and placed between low-loss edge couplers. The photonic integrated circuit is laid-out using the AIM Photonics Process Design Kit and fabricated on a Multi-Project Wafer. We detect chemical warfare agent simulants at sub parts-per-million levels in times of less than a minute. We also discuss anticipated improvements in the level of integration for photonic chemical sensors, as well as existing challenges.

The development of 8 inch roll-to-plate nanoimprint lithography (8-R2P-NIL) system

NASA Astrophysics Data System (ADS)

Lee, Lai Seng; Mohamed, Khairudin; Ooi, Su Guan

2017-07-01

Growth in semiconductor and integrated circuit industry was observed in the past decennium of years for industrial technology which followed Moore's law. The line width of nanostructure to be exposed was influenced by the essential technology of photolithography. Thus, it is crucial to have a low cost and high throughput manufacturing process for nanostructures. Nanoimprint Lithography technique invented by Stephen Y. Chou was considered as major nanolithography process to be used in future integrated circuit and integrated optics. The drawbacks of high imprint pressure, high imprint temperature, air bubbles formation, resist sticking to mold and low throughput of thermal nanoimprint lithography on silicon wafer have yet to be solved. Thus, the objectives of this work is to develop a high throughput, low imprint force, room temperature UV assisted 8 inch roll to plate nanoimprint lithography system capable of imprinting nanostructures on 200 mm silicon wafer using roller imprint with flexible mold. A piece of resist spin coated silicon wafer was placed onto vacuum chuck drives forward by a stepper motor. A quartz roller wrapped with a piece of transparent flexible mold was used as imprint roller. The imprinted nanostructures were cured by 10 W, 365 nm UV LED which situated inside the quartz roller. Heat generated by UV LED was dissipated by micro heat pipe. The flexible mold detaches from imprinted nanostructures in a 'line peeling' pattern and imprint pressure was measured by ultra-thin force sensors. This system has imprinting speed capability ranging from 0.19 mm/s to 5.65 mm/s, equivalent to imprinting capability of 3 to 20 pieces of 8 inch wafers per hour. Speed synchronization between imprint roller and vacuum chuck was achieved by controlling pulse rate supplied to stepper motor which drive the vacuum chuck. The speed different ranging from 2 nm/s to 98 nm/s is achievable. Vacuum chuck height was controlled by stepper motor with displacement of 5 nm/step.

Hot embossed polyethylene through-hole chips for bead-based microfluidic devices

PubMed Central

Chou, Jie; Du, Nan; Ou, Tina; Floriano, Pierre N.; Christodoulides, Nicolaos; McDevitt, John T.

2013-01-01

Over the past decade, there has been a growth of interest in the translation of microfluidic systems into real-world clinical practice, especially for use in point-of-care or near patient settings. While initial fabrication advances in microfluidics involved mainly the etching of silicon and glass, the economics of scaling of these materials is not amendable for point-of-care usage where single-test applications forces cost considerations to be kept low and throughput high. As such, a materials base more consistent with point-of-care needs is required. In this manuscript, the fabrication of a hot embossed, through-hole low-density polyethylene ensembles derived from an anisotropically etched silicon wafer is discussed. This semi-opaque polymer that can be easily sterilized and recycled provides low background noise for fluorescence measurements and yields more affordable cost than other thermoplastics commonly used for microfluidic applications such as cyclic olefin copolymer (COC). To fabrication through-hole microchips from this alternative material for microfluidics, a fabrication technique that uses a high-temperature, high-pressure resistant mold is described. This aluminum-based epoxy mold, serving as the positive master mold for embossing, is casted over etched arrays of pyramidal pits in a silicon wafer. Methods of surface treatment of the wafer prior to casting and PDMS casting of the epoxy are discussed to preserve the silicon wafer for future use. Changes in the thickness of polyethylene are observed for varying embossing temperatures. The methodology described herein can quickly fabricate 20 disposable, single use chips in less than 30 minutes with the ability to scale up 4x by using multiple molds simultaneously. When coupled as a platform supporting porous bead sensors, as in the recently developed Programmable Bio-Nano-Chip, this bead chip system can achieve limits of detection, for the cardiac biomarker C-reactive protein, of 0.3 ng/mL, thereby demonstrating the approach is compatible with high performance, real-world clinical measurements in the context of point-of-care testing. PMID:23183187

3D-FBK Pixel Sensors: Recent Beam Tests Results with Irradiated Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Micelli, A.; /INFN, Trieste /Udine U.; Helle, K.

2012-04-30

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology ismore » an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.« less

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

PubMed

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Laser Beam Shaping

NASA Astrophysics Data System (ADS)

Aït-Ameur, Kamel; Passilly, Nicolas; de Saint Denis, R.; Fromager, Michaël

2008-09-01

We consider the promising properties of very simple Diffractive Optical Elements (DOE) for reshaping the intensity profile of a laser beam. The first type of DOE that we have considered is a phase aperture which consists in a transparent plate with a circular relief introducing a π phase shift in the central region of the incident beam. The phase aperture is able to convert a Gaussian beam into a super-Gaussian, a ring-shaped or a doughnut profile. The second DOE that has been considered is an adjustable axicon able to transform a Gaussian laser beam into a dark hollow beam or a Bessel-Gauss beam. The desired conical geometry is obtained from a deformable mirror formed by a 2 inches, 0.25mm thick silicon wafer supported by a standard 2 inches optical mount. To achieve the adequate deformation a small metallic ball pushes the back of the mirror wafer. The realized shape is monitored with a Shack-Hartmann wave-front sensor and it is shown that conical shape cannot be achieved. Nevertheless, recorded wave fronts exhibit important third order spherical aberration able to achieve beam profile transformation as conical lenses.

Optical Characterization of the SPT-3G Camera

NASA Astrophysics Data System (ADS)

Pan, Z.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Carter, F. W.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pearson, J.; Posada, C. M.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

2018-05-01

The third-generation South Pole Telescope camera is designed to measure the cosmic microwave background across three frequency bands (centered at 95, 150 and 220 GHz) with ˜ 16,000 transition-edge sensor (TES) bolometers. Each multichroic array element on a detector wafer has a broadband sinuous antenna that couples power to six TESs, one for each of the three observing bands and both polarizations, via lumped element filters. Ten detector wafers populate the detector array, which is coupled to the sky via a large-aperture optical system. Here we present the frequency band characterization with Fourier transform spectroscopy, measurements of optical time constants, beam properties, and optical and polarization efficiencies of the detector array. The detectors have frequency bands consistent with our simulations and have high average optical efficiency which is 86, 77 and 66% for the 95, 150 and 220 GHz detectors. The time constants of the detectors are mostly between 0.5 and 5 ms. The beam is round with the correct size, and the polarization efficiency is more than 90% for most of the bolometers.

Bio-inspired Fabrication of Complex Hierarchical Structure in Silicon.

PubMed

Gao, Yang; Peng, Zhengchun; Shi, Tielin; Tan, Xianhua; Zhang, Deqin; Huang, Qiang; Zou, Chuanping; Liao, Guanglan

2015-08-01

In this paper, we developed a top-down method to fabricate complex three dimensional silicon structure, which was inspired by the hierarchical micro/nanostructure of the Morpho butterfly scales. The fabrication procedure includes photolithography, metal masking, and both dry and wet etching techniques. First, microscale photoresist grating pattern was formed on the silicon (111) wafer. Trenches with controllable rippled structures on the sidewalls were etched by inductively coupled plasma reactive ion etching Bosch process. Then, Cr film was angled deposited on the bottom of the ripples by electron beam evaporation, followed by anisotropic wet etching of the silicon. The simple fabrication method results in large scale hierarchical structure on a silicon wafer. The fabricated Si structure has multiple layers with uniform thickness of hundreds nanometers. We conducted both light reflection and heat transfer experiments on this structure. They exhibited excellent antireflection performance for polarized ultraviolet, visible and near infrared wavelengths. And the heat flux of the structure was significantly enhanced. As such, we believe that these bio-inspired hierarchical silicon structure will have promising applications in photovoltaics, sensor technology and photonic crystal devices.

Optical Characterization of the SPT-3G Focal Plane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Z.; et al.

The third-generation South Pole Telescope camera is designed to measure the cosmic microwave background across three frequency bands (95, 150 and 220 GHz) with ~16,000 transition-edge sensor (TES) bolometers. Each multichroic pixel on a detector wafer has a broadband sinuous antenna that couples power to six TESs, one for each of the three observing bands and both polarization directions, via lumped element filters. Ten detector wafers populate the focal plane, which is coupled to the sky via a large-aperture optical system. Here we present the frequency band characterization with Fourier transform spectroscopy, measurements of optical time constants, beam properties, andmore » optical and polarization efficiencies of the focal plane. The detectors have frequency bands consistent with our simulations, and have high average optical efficiency which is 86%, 77% and 66% for the 95, 150 and 220 GHz detectors. The time constants of the detectors are mostly between 0.5 ms and 5 ms. The beam is round with the correct size, and the polarization efficiency is more than 90% for most of the bolometers« less

Optical technologies for TSV inspection

NASA Astrophysics Data System (ADS)

Aiyer, Arun A.; Maltsev, Nikolai; Ryu, Jae

2014-04-01

In this paper, Frontier Semiconductor will introduce a new technology that is referred to as Virtual Interface Technology (VIT™). VIT™ is a Fourier domain technique that utilizes temporal phase shear of the measurement beam. The unique configuration of the sensor enables measurement of wafer and bonded stack thicknesses ranging from a few microns to millimeters with measurement repeatability ~ nm and resolution of approximately 0.1% of nominal thickness or depth. We will present data on high aspect ratio via measurements (depth, top critical dimension, bottom critical dimension, via bottom profile and side wall angle), bonded wafer stack thickness, and Cu bump measurements. A complimentary tool developed at FSM is a high resolution μRaman spectrometer to measure stress-change in Si lattice induced by Through Silicon Via (TSV) processes. These measurements are important to determine Keep-Out-Zone in the areas where devices are built so that the engineered gate strain is not altered by TSV processing induced strain. Applications include via post-etch; via post fill, and bottom Cu nail stress measurements. The capabilities of and measurement results from both tools are discussed below.

MT3825BA: a 384×288-25µm ROIC for uncooled microbolometer FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Gulden, M. Ali; Bayhan, Nusret; Incedere, O. Samet; Soyer, S. Tuncer; Ustundag, Cem M. B.; Isikhan, Murat; Kocak, Serhat; Turan, Ozge; Yalcin, Cem; Akin, Tayfun

2014-06-01

This paper reports the development of a new microbolometer Readout Integrated Circuit (ROIC) called MT3825BA. It has a format of 384 × 288 and a pixel pitch of 25μm. MT3825BA is Mikro-Tasarim's second microbolometer ROIC product, which is developed specifically for resistive surface micro-machined microbolometer detector arrays using high-TCR pixel materials, such as VOx and a-Si. MT3825BA has a system-on-chip architecture, where all the timing, biasing, and pixel non-uniformity correction (NUC) operations in the ROIC are applied using on-chip circuitry simplifying the use and system integration of this ROIC. The ROIC is designed to support pixel resistance values ranging from 30 KΩ to 100 KΩ. MT3825BA is operated using conventional row based readout method, where pixels in the array are read out in a row-by-row basis, where the applied bias for each pixel in a given row is updated at the beginning of each line period according to the applied line based NUC data. The NUC data is applied continuously in a row-by-row basis using the serial programming interface, which is also used to program user configurable features of the ROIC, such as readout gain, integration time, and number of analog video outputs. MT3825BA has a total of 4 analog video outputs and 2 analog reference outputs, placed at the top and bottom of the ROIC, which can be programmed to operate in the 1, 2, and 4-output modes, supporting frames rates well above 60 fps at a 3 MHz pixel output rate. The pixels in the array are read out with respect to reference pixels implemented above and below actual array pixels. The bias voltage of the pixels can be programmed over a 1.0 V range to compensate for the changes in the detector resistance values due to the variations coming from the manufacturing process or changes in the operating temperature. The ROIC has an on-chip integrated temperature sensor with a sensitivity of better than 5 mV / K, and the output of the temperature sensor can be read out the output as part of the analog video stream. MT3825BA can be used to build a microbolometer FPAs with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a detector resistance value up to 100 KΩ, a high TCR value (< 2 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). MT3825BA measures 13.0 mm × 13.5 mm and is fabricated on 200 mm CMOS wafers. The microbolometer ROIC wafers are engineered to have flat surface finish to simplify the wafer level detector fabrication and wafer level vacuum packaging (WLVP). The ROIC runs on 3.3 V analog and 1.8 V digital supplies, and dissipates less than 85 mW in the 2-output mode at 30 fps. Mikro-Tasarim provides tested ROIC wafers and offers compact test electronics and software for its ROIC customers to shorten their FPA and camera development cycles.

Carbon Nanotube Based Chemical Sensors for Space and Terrestrial Applications

NASA Technical Reports Server (NTRS)

Li, Jing; Lu, Yijiang

2009-01-01

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs), on a pair of interdigitated electrodes (IDE) processed with a silicon-based microfabrication and micromachining technique. The IDE fingers were fabricated using photolithography and thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to nitrogen dioxide, acetone, benzene, nitrotoluene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing of carbon nanotubes in our sensor platform can be understood by intra- and inter-tube electron modulation in terms of charge transfer mechanisms. As a result of the charge transfer, the conductance of p-type or hole-richer SWNTs in air will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost. Additionally, a wireless capability of such a sensor chip can be used for networked mobile and fixed-site detection and warning systems for military bases, facilities and battlefield areas.

Periodic dielectric structure for production of photonic band gap and method for fabricating the same

DOEpatents

Ozbay, Ekmel; Tuttle, Gary; Michel, Erick; Ho, Kai-Ming; Biswas, Rana; Chan, Che-Ting; Soukoulis, Costas

1995-01-01

A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiriolo, Raffaele; Rangnekar, Neel; Zhang, Han

A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservationmore » of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.« less

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

PubMed

Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

2018-01-03

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

PubMed Central

Clarke, Andrew S.; Ivory, James; Holland, Andrew D.

2018-01-01

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths. PMID:29301379

Applications of the silicon wafer direct-bonding technique to electron devices

NASA Astrophysics Data System (ADS)

Furukawa, K.; Nakagawa, A.

1990-01-01

A silicon wafer direct-bonding (SDB) technique has been developed. A pair of bare silicon wafers, as well as an oxidized wafer pair, are bonded throughout the wafer surfaces without any bonding material. Conventional semiconductor device processes can be used for the bonded wafers, since the bonded interface is stable thermally, chemically, mechanically and electrically. Therefore, the SDB technique is very attractive, and has been applied to several kinds of electron devices. Bare silicon to bare silicon bonding is an alternative for epitaxial growth. A thick, high quality and high resistivity layer on a low resistivity substrate was obtained without autodoping. 1800 V insulated gate bipolar transistors were developed using these SDB wafers. No electrical resistance was observed at the bonded bare silicon interfaces. If oxidized wafers are bonded, the two wafers are electrically isolated, providing silicon on insulator (SOI) wafers. Dielectrically isolated photodiode arrays were fabricated on the SOI wafers and 500 V power IC's are now being developed.

SOI-silicon as structural layer for NEMS applications

NASA Astrophysics Data System (ADS)

Villarroya, Maria; Figueras, Eduard; Perez-Murano, Francesc; Campabadal, Francesca; Esteve, Jaume; Barniol, Nuria

2003-04-01

The objective of this paper is to present the compatibilization between a standard CMOS on bulk silicon process and the fabrication of nanoelectromechanical systems using Silicon On Insulator (SOI) wafers as substrate. This compatibilization is required as first step to fabricate a very high sensitive mass sensor based on a resonant cantilever with nanometer dimensions using the crystal silicon COI layer as the structural layer. The cantilever is driven electrostatically to its resonance frequency by an electrode placed parallel to the cantilever. A capacitive readout is performed. To achieve very high resolution, very small dimensions of the cantilever (nanometer range) are needed. For this reason, the control and excitation circuitry has to be integrated on the same substrate than the cantilever. Prior to the development of this sensor, it is necessary to develop a substrate able to be used first to integrate a standard CMOS circuit and afterwards to fabricate the nano-resonator. Starting from a SOI wafer and using very simple processes, the SOI silicon layer is removed, except from the areas in which nano-structures will be fabricated; obtaining a silicon substrate with islands with a SOI structure. The CMOS circuitry will be integrated on the bulk silicon region, while the remainder SOI region will be used for the nanoresonator. The silicon oxide of this SOI region is used as insulator; and as sacrificial layer, etched to release the cantilever from the substrate. To assure the cover of the different CMOS layers over the step of the islands, it is essential to avoid very sharp steps.

Developing a structural health monitoring system for nuclear dry cask storage canister

NASA Astrophysics Data System (ADS)

Sun, Xiaoyi; Lin, Bin; Bao, Jingjing; Giurgiutiu, Victor; Knight, Travis; Lam, Poh-Sang; Yu, Lingyu

2015-03-01

Interim storage of spent nuclear fuel from reactor sites has gained additional importance and urgency for resolving waste-management-related technical issues. In total, there are over 1482 dry cask storage system (DCSS) in use at US plants, storing 57,807 fuel assemblies. Nondestructive material condition monitoring is in urgent need and must be integrated into the fuel cycle to quantify the "state of health", and more importantly, to guarantee the safe operation of radioactive waste storage systems (RWSS) during their extended usage period. A state-of-the-art nuclear structural health monitoring (N-SHM) system based on in-situ sensing technologies that monitor material degradation and aging for nuclear spent fuel DCSS and similar structures is being developed. The N-SHM technology uses permanently installed low-profile piezoelectric wafer sensors to perform long-term health monitoring by strategically using a combined impedance (EMIS), acoustic emission (AE), and guided ultrasonic wave (GUW) approach, called "multimode sensing", which is conducted by the same network of installed sensors activated in a variety of ways. The system will detect AE events resulting from crack (case for study in this project) and evaluate the damage evolution; when significant AE is detected, the sensor network will switch to the GUW mode to perform damage localization, and quantification as well as probe "hot spots" that are prone to damage for material degradation evaluation using EMIS approach. The N-SHM is expected to eventually provide a systematic methodology for assessing and monitoring nuclear waste storage systems without incurring human radiation exposure.

Periodic dielectric structure for production of photonic band gap and method for fabricating the same

DOEpatents

Ozbay, E.; Tuttle, G.; Michel, E.; Ho, K.M.; Biswas, R.; Chan, C.T.; Soukoulis, C.

1995-04-11

A method is disclosed for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap. 42 figures.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, Theodoer F.

1995-01-01

Apparatus for measuring thicknesses of semiconductor wafers, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light.

Stable wafer-carrier system

DOEpatents

Rozenzon, Yan; Trujillo, Robert T; Beese, Steven C

2013-10-22

One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-05-20

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-11-25

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, T.F.

1995-03-07

Apparatus for measuring thicknesses of semiconductor wafers is discussed, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light. 4 figs.

Lyophilised wafers as vehicles for the topical release of chlorhexidine digluconate--release kinetics and efficacy against Pseudomonas aeruginosa.

PubMed

Labovitiadi, Olga; Lamb, Andrew J; Matthews, Kerr H

2012-12-15

There is a requirement to deliver accurate amounts of broad spectrum antimicrobial compounds locally to exuding wounds. Varying amounts of exudate complicates this process by limiting the residence and therefore efficacy of active substances. Minimum bactericidal concentrations (MBC) of antimicrobials are necessary to suppress infection and lessen the chances of resistant strains of potentially pathogenic bacteria from prevailing. Polysaccharide wafers can adhere to exudating wound beds, absorbing fluids and forming highly viscous gels that remain in situ for prolonged periods of time to release sustained amounts of antimicrobial. In this study, five different formulations were produced containing the antimicrobial, chlorhexidine digluconate (CHD). Absorption of simulated wound fluid, resultant rheological properties of gels and efficacy against plated cultures of Pseudomonas aeruginosa were measured and compared. CHD reduced the 'water uptake' of wafers by 11-50% (w/w) and decreased the rheological consistency of non-SA containing gels by 10-65%. Release studies indicated that karaya wafers gave the highest sustained release of CHD, >60 μg/mL in 24 h, well in excess of the MBC for P. aeruginosa. Release kinetics indicated an anomalous diffusion mechanism according to Korsmeyer-Peppas, with diffusion exponents varying from 0.31 to 0.41 for most wafers except xanthan (0.65). Copyright © 2012 Elsevier B.V. All rights reserved.

Performance Evaluations of Ceramic Wafer Seals

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H., Jr.; DeMange, Jeffrey J.; Steinetz, Bruce M.

2006-01-01

Future hypersonic vehicles will require high temperature, dynamic seals in advanced ramjet/scramjet engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Seal temperatures in these locations can exceed 2000 F, especially when the seals are in contact with hot ceramic matrix composite sealing surfaces. NASA Glenn Research Center is developing advanced ceramic wafer seals to meet the needs of these applications. High temperature scrub tests performed between silicon nitride wafers and carbon-silicon carbide rub surfaces revealed high friction forces and evidence of material transfer from the rub surfaces to the wafer seals. Stickage between adjacent wafers was also observed after testing. Several design changes to the wafer seals were evaluated as possible solutions to these concerns. Wafers with recessed sides were evaluated as a potential means of reducing friction between adjacent wafers. Alternative wafer materials are also being considered as a means of reducing friction between the seals and their sealing surfaces and because the baseline silicon nitride wafer material (AS800) is no longer commercially available.

Thermal stress during RTP processes and its possible effect on the light induced degradation in Cz-Si wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Yacine; Bouhafs, Djoudi; Khelifati, Nabil; Guenda, Abdelkader; Demagh, Nacer-Eddine; Demagh, Assia; Pfeiffer, Pierre; Mezghiche, Salah; Hetatache, Warda; Derkaoui, Fahima; Nasraoui, Chahinez; Nwadiaru, Ogechi Vivian

2018-04-01

In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD system on both surfaces. Then the wafers were subjected to an RTP cycle at a peak temperature of 620 °C. The first wafer was protected (PW) from the direct radiative heating of the RTP furnace by placing the wafer between two as-cut Cz-Si shield wafers during the heat processing. The second wafer was not protected (NPW) and followed the same RTP cycle procedure. The carrier lifetime τ eff was measured using the QSSPC technique before and after illumination for 5 h duration at 0.5 suns. The immediate results of the measured lifetime (τ RTP ) after the RTP process have shown a regeneration in the lifetime of the two wafers with the PW wafer exhibiting an important enhancement in τ RTP as compared to the NPW wafer. The QSSPC measurements have indicated a good stable lifetime (τ d ) and a weak degradation effect was observed in the case of the PW wafer as compared to their initial lifetime value. Interferometry technique analyses have shown an enhancement in the surface roughness for the NPW wafer as compared to the protected one. Additionally, to improve the correlation between the RTP heat radiation stress and the carrier lifetime behavior, a simulation of the thermal stress and temperature profile using the finite element method on the wafers surface at RTP peak temperature of 620 °C was performed. The results confirm the reduction of the thermal stress with less heat losses for the PW wafer. Finally, the proposed method can lead to improving the lifetime of wafers by an RTP process at minimum energy costs.

Highly Transparent Wafer-Scale Synthesis of Crystalline WS2 Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications.

PubMed

Pawbake, Amit S; Waykar, Ravindra G; Late, Dattatray J; Jadkar, Sandesh R

2016-02-10

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E(1)2g and A1g at ∼356 and ∼420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of ∼12 s and recovery time of ∼13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of ∼51 s and recovery time of ∼88 s were observed with sensitivity ∼137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

Planning for the semiconductor manufacturer of the future

NASA Technical Reports Server (NTRS)

Fargher, Hugh E.; Smith, Richard A.

1992-01-01

Texas Instruments (TI) is currently contracted by the Air Force Wright Laboratory and the Defense Advanced Research Projects Agency (DARPA) to develop the next generation flexible semiconductor wafer fabrication system called Microelectronics Manufacturing Science & Technology (MMST). Several revolutionary concepts are being pioneered on MMST, including the following: new single-wafer rapid thermal processes, in-situ sensors, cluster equipment, and advanced Computer Integrated Manufacturing (CIM) software. The objective of the project is to develop a manufacturing system capable of achieving an order of magnitude improvement in almost all aspects of wafer fabrication. TI was awarded the contract in Oct., 1988, and will complete development with a fabrication facility demonstration in April, 1993. An important part of MMST is development of the CIM environment responsible for coordinating all parts of the system. The CIM architecture being developed is based on a distributed object oriented framework made of several cooperating subsystems. The software subsystems include the following: process control for dynamic control of factory processes; modular processing system for controlling the processing equipment; generic equipment model which provides an interface between processing equipment and the rest of the factory; specification system which maintains factory documents and product specifications; simulator for modelling the factory for analysis purposes; scheduler for scheduling work on the factory floor; and the planner for planning and monitoring of orders within the factory. This paper first outlines the division of responsibility between the planner, scheduler, and simulator subsystems. It then describes the approach to incremental planning and the way in which uncertainty is modelled within the plan representation. Finally, current status and initial results are described.

Semiconductor sensors

NASA Technical Reports Server (NTRS)

Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

1977-01-01

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

A fatigue test method for Pb(Zr,Ti)O3 thin films by using MEMS-based self-sensitive piezoelectric microcantilevers

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Maeda, R.; Itoh, T.

2008-11-01

In the present study, we propose a new method for the fatigue test of lead zirconate titanate (PZT) thin films for MEMS devices by using self-sensitive piezoelectric microcantilevers developed in our previous study. We have deposited PZT thin films on SOI wafers and fabricated the microcantilevers through the MEMS microfabrication process. In the self-sensitive piezoelectric microcantilevers, the PZT thin films are separated in order to act as an actuator and a sensor. The fatigue characteristic of the PZT thin films can be evaluated by measuring the output voltage of the sensor as a function of time. When a sine wave of 20 Vpp and a dc bias of 10 V were applied to the PZT thin films for an actuator, the output voltage of the sensor fell down after 107 fatigue cycles. We have also investigated the influence of amplitude of the actuation sine wave and dc bias on the fatigue of the PZT thin films by using the proposed fatigue test method.

Ultra-Sensitive Magnetoresistive Displacement Sensing Device

NASA Technical Reports Server (NTRS)

Olivas, John D. (Inventor); Lairson, Bruce M. (Inventor); Ramesham, Rajeshuni (Inventor)

2003-01-01

An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

Study of calixarenes thin films as chemical sensors for the detection of explosives

NASA Astrophysics Data System (ADS)

Montmeat, P.; Veignal, F.; Methivier, C.; Pradier, C. M.; Hairault, L.

2014-02-01

Calix(n)arenes (n = 4, 6, 8) are used as sensitive coatings for Quartz Crystal Microbalance (QCM)-based chemical sensors, and specially for the detection of dinitrotoluene as a model explosive molecule. Calix(n)arenes complex organic architectures were deposited by spray on gold-coated wafer surfaces, and DNT detection tests were performed by measuring both frequency changes and IR spectra during exposure to DNT vapours. The adsorption of DNT on calixarenes surface is proved by Polarisation Modulation Infrared Reflection-Absorption Spectroscopy (PM-IRRAS) experiments, which brings a chemical characterisation of the sensing surfaces. Kinetics of interaction of DNT with the surface was measured by QCM. When deposited onto QCM, calixarenes showed an excellent sensitivity to DNT vapours; no significant effect of the size of the cage was observed. The main drawback is the poor reversibility of these sensors, possibly due to a too strong interaction of dinitrotoluene inside the cage of the calixarenes, or to a loss of the ternary structure of these molecules, which in turn induces a loss of interaction strength with host molecules.

Electrochemical Sensing for a Rapidly Evolving World

NASA Astrophysics Data System (ADS)

Mullen, Max Robertson

This dissertation focuses on three projects involving the development of harsh environment gas sensors. The first project discusses the development of a multipurpose oxygen sensor electrode for use in sealing with the common electrolyte yttria stabilized zirconia. The purpose of the sealing function is to produce an internal reference environment maintained by a metal/metal oxide mixture, a criteria for miniaturization of potentiometric oxygen sensing technology. This sensor measures a potential between the internal reference and a sensing environment. The second project discusses the miniaturization of an oxygen sensor and the fabrication of a more generalized electrochemical sensing platform. The third project discusses the discovery of a new mechanism in the electrochemical sensing of ammonia through molecular recognition and the utilization of a sensor taking advantage of the new mechanism. An initial study involving the development of a microwave synthesized La0.8Sr0.2Al0.9Mn0.1O3 sensor electrode material illustrates the ability of the material developed to meet ionic and electronic conducting requirements for effective and Nernstian oxygen sensing. In addition the material deforms plastically under hot isostatic pressing conditions in a similar temperature and pressure regime with yttria stabilized zirconia to produce a seal and survive temperatures up to 1350 °C. In the second project we show novel methods to seal an oxygen environment inside a device cavity to produce an electrochemical sensor body using room temperature plasma-activated bonding and low temperature and pressure assisted plasma-activated bonding with silicon bodies, both in a clean room environment. The evolution from isostatic hot pressing methods towards room temperature complementary metal oxide semiconductor (CMOS) compatible technologies using single crystal silicon substrates in the clean room allows the sealing of devices on a much larger scale. Through this evolution in bonding technology we move from performing non-scalable experiments to produce one sensor at a time to scalable experiments producing six. The bonding methods we use are compatible with wafer scale processing. Practically speaking this means that the oxygen sensor design is scalable to produce thousands of sensors from one single bond. Using this bonding technology we develop a generalized sensing platform that could be used for a variety of sensing applications, including oxygen sensing, but also potentially involving CO2 or NOx as well. Future efforts will involve completing of O2 sensor construction and adaption of the design for CO2 and NOx sensing. The final project focuses on a novel ammonia sensor and sensing mechanism in Ag loaded zeolite Y. The sensor resistance changes upon exposure to ammonia due to the molecular recognition of Ag+ and ammonia, producing Ag(NH3)x+ species. The sensing mechanism is a Grothuss like mechanism based on the hoping of Ag+ centers. The hopping frequency of Ag+ changes upon introduction of ammonia due to the reduced electrostatic interactions between Ag+ and the negatively charged zeolite framework upon formation of Ag(NH3) x+. The change in hopping frequency results in a measurable change in impedance.

Porous solid ion exchange wafer for immobilizing biomolecules

DOEpatents

Arora, Michelle B.; Hestekin, Jamie A.; Lin, YuPo J.; St. Martin, Edward J.; Snyder, Seth W.

2007-12-11

A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

Interferometric thickness calibration of 300 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Quandou; Griesmann, Ulf; Polvani, Robert

2005-12-01

The "Improved Infrared Interferometer" (IR 3) at the National Institute of Standards and Technology (NIST) is a phase-measuring interferometer, operating at a wavelength of 1550 nm, which is being developed for measuring the thickness and thickness variation of low-doped silicon wafers with diameters up to 300 mm. The purpose of the interferometer is to produce calibrated silicon wafers, with a certified measurement uncertainty, which can be used as reference wafers by wafer manufacturers and metrology tool manufacturers. We give an overview of the design of the interferometer and discuss its application to wafer thickness measurements. The conversion of optical thickness, as measured by the interferometer, to the wafer thickness requires knowledge of the refractive index of the material of the wafer. We describe a method for measuring the refractive index which is then used to establish absolute thickness and thickness variation maps for the wafer.

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

NASA Astrophysics Data System (ADS)

Mieda, Eiko; Maeda, Tatsuro; Miyata, Noriyuki; Yasuda, Tetsuji; Kurashima, Yuichi; Maeda, Atsuhiko; Takagi, Hideki; Aoki, Takeshi; Yamamoto, Taketsugu; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Ogawa, Arito; Kikuchi, Toshiyuki; Kunii, Yasuo

2015-03-01

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

NASA Technical Reports Server (NTRS)

1984-01-01

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata; Cunningham, Thomas

2008-01-01

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

MT3250BA: a 320×256-50µm snapshot microbolometer ROIC for high-resistance detector arrays

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Akin, Tayfun

2013-06-01

This paper reports the development of a new microbolometer readout integrated circuit (MT3250BA) designed for high-resistance detector arrays. MT3250BA is the first microbolometer readout integrated circuit (ROIC) product from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic CMOS imaging sensors and ROICs for hybrid photonic imaging sensors and microbolometers. MT3250BA has a format of 320 × 256 and a pixel pitch of 50 µm, developed with a system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT3250BA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. MT3250BA has 2 analog video outputs and 1 analog reference output for pseudo-differential operation, and the ROIC can be programmed to operate in the 1 or 2-output modes. A unique feature of MT3250BA is that it performs snapshot readout operation; therefore, the image quality will only be limited by the thermal time constant of the detector pixels, but not by the scanning speed of the ROIC, as commonly found in the conventional microbolometer ROICs performing line-by-line (rolling-line) readout operation. The signal integration is performed at the pixel level in parallel for the whole array, and signal integration time can be programmed from 0.1 µs up to 100 ms in steps of 0.1 µs. The ROIC is designed to work with high-resistance detector arrays with pixel resistance values higher than 250 kΩ. The detector bias voltage can be programmed on-chip over a 2 V range with a resolution of 1 mV. The ROIC has a measured input referred noise of 260 µV rms at 300 K. The ROIC can be used to build a microbolometer infrared sensor with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a high detector resistance value (≥ 250 KΩ), a high TCR value (≥ 2.5 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). The ROIC uses a single 3.3 V supply voltage and dissipates less than 75 mW in the 1-output mode at 60 fps. MT3250BA is fabricated using a mixed-signal CMOS process on 200 mm CMOS wafers, and tested wafers are available with test data and wafer map. A USB based compact test electronics and software are available for quick evaluation of this new microbolometer ROIC.

Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p- and n-S/D Implants in an Existing Batch Implanter Production Line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmeide, Matthias; Kontratenko, Serguei; Krimbacher, Bernhard

2008-11-03

This paper is focused on the integration and qualification of an Axcelis Optima HD single wafer high current spot beam implanter in an existing 200 mm production line with different types of Axcelis batch implanters for high current applications. Both the design of the beamline and the beam shape are comparable between single wafer and batch high current spot beam implanters. In contrast to the single wafer high current ribbon beam implanter, energy contamination is not a concern for the considered spot beam tool because the drift mode can be used down to energies in the 2 keV region. Themore » most important difference between single wafer and batch high current implanters is the significantly higher dose rate and, therefore, the higher damage rate for the single wafer tool due to the different scanning architecture. The results of the integration of high dose implantations, mainly for p- and n-S/D formation, for DRAM 110 nm without pre-amorphization implantation (PAI), CMOS Logic from around 250 nm down to 90 nm without and with PAI, are presented and discussed. Dopant concentration profile analysis using SIMS was performed for different technologies and implantation conditions. The impurity activation was measured using sheet resistance and in some cases spreading resistance technique was applied. The amorphous layer thickness was measured using TEM. Finally, device data are presented in combination with dose, energy and beam current variations. The results have shown that the integration of implantation processes into crystalline structure without PAI is more complex and time consuming than implantations into amorphous layer where the damage difference due to the different dose rates is negligible.« less

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

2017-03-01

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenz, Adam

For photovoltaic (PV) manufacturing to thrive in the U.S., there must be an innovative core to the technology. Project Automate builds on 1366’s proprietary Direct Wafer® kerfless wafer technology and aims to unlock the cost and efficiency advantages of thin kerfless wafers. Direct Wafer is an innovative, U.S.-friendly (efficient, low-labor content) manufacturing process that addresses the main cost barrier limiting silicon PV cost-reductions – the 35-year-old grand challenge of manufacturing quality wafers (40% of the cost of modules) without the cost and waste of sawing. This simple, scalable process will allow 1366 to manufacture “drop-in” replacement wafers for the $10more » billion silicon PV wafer market at 50% of the cost, 60% of the capital, and 30% of the electricity of conventional casting and sawing manufacturing processes. This SolarMat project developed the Direct Wafer processes’ unique capability to tailor the shape of wafers to simultaneously make thinner AND stronger wafers (with lower silicon usage) that enable high-efficiency cell architectures. By producing wafers with a unique target geometry including a thick border (which determines handling characteristics) and thin interior regions (which control light capture and electron transport and therefore determine efficiency), 1366 can simultaneously improve quality and lower cost (using less silicon).« less

Robust wafer identification recognition based on asterisk-shape filter and high-low score comparison method.

PubMed

Hsu, Wei-Chih; Yu, Tsan-Ying; Chen, Kuan-Liang

2009-12-10

Wafer identifications (wafer ID) can be used to identify wafers from each other so that wafer processing can be traced easily. Wafer ID recognition is one of the problems of optical character recognition. The process to recognize wafer IDs is similar to that used in recognizing car license-plate characters. However, due to some unique characteristics, such as the irregular space between two characters and the unsuccessive strokes of wafer ID, it will not get a good result to recognize wafer ID by directly utilizing the approaches used in car license-plate character recognition. Wafer ID scratches are engraved by a laser scribe almost along the following four fixed directions: horizontal, vertical, plus 45 degrees , and minus 45 degrees orientations. The closer to the center line of a wafer ID scratch, the higher the gray level will be. These and other characteristics increase the difficulty to recognize the wafer ID. In this paper a wafer ID recognition scheme based on an asterisk-shape filter and a high-low score comparison method is proposed to cope with the serious influence of uneven luminance and make recognition more efficiently. Our proposed approach consists of some processing stages. Especially in the final recognition stage, a template-matching method combined with stroke analysis is used as a recognizing scheme. This is because wafer IDs are composed of Semiconductor Equipment and Materials International (SEMI) standard Arabic numbers and English alphabets, and thus the template ID images are easy to obtain. Furthermore, compared with the approach that requires prior training, such as a support vector machine, which often needs a large amount of training image samples, no prior training is required for our approach. The testing results show that our proposed scheme can efficiently and correctly segment out and recognize the wafer ID with high performance.

Laser furnace and method for zone refining of semiconductor wafers

NASA Technical Reports Server (NTRS)

Griner, Donald B. (Inventor); zur Burg, Frederick W. (Inventor); Penn, Wayne M. (Inventor)

1988-01-01

A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

On the Effect of Native SiO2 on Si over the SPR-mediated Photocatalytic Activities of Au and Ag Nanoparticles.

PubMed

Wang, Jiale; de Freitas, Isabel C; Alves, Tiago V; Ando, Romulo A; Fang, Zebo; Camargo, Pedro H C

2017-05-29

In hybrid materials containing plasmonic nanoparticles such as Au and Ag, charge-transfer processes from and to Au or Ag can affect both activities and selectivity in plasmonic catalysis. Inspired by the widespread utilization of commercial Si wafers in surface-enhanced Raman spectroscopy (SERS) studies, we investigated herein the effect of the native SiO 2 layer on Si wafers over the surface plasmon resonance (SPR)-mediated activities of the Au and Ag nanoparticles (NPs). We prepared SERS-active plasmonic comprised of Au and Ag NPs deposited onto a Si wafer. Here, two kinds of Si wafers were employed: Si with a native oxide surface layer (Si/SiO 2 ) and Si without a native oxide surface layer (Si). This led to Si/SiO 2 /Au, Si/SiO 2 /Ag, Si/Au, and Si/Ag NPs. The SPR-mediated oxidation of p-aminothiophenol (PATP) to p,p'-dimercaptoazobenzene (DMAB) was employed as a model transformation. By comparing the performances and band structures for the Si/Au and Si/Ag relative to Si/SiO 2 /Au and Si/SiO 2 /Ag NPs, it was found that the presence of a SiO 2 layer was crucial to enable higher SPR-mediated PATP to DMAB conversions. The SiO 2 layer acts to prevent the charge transfer of SPR-excited hot electrons from Au or Ag nanoparticles to the Si substrate. This enabled SPR-excited hot electrons to be transferred to adsorbed O 2 molecules, which then participate in the selective oxidation of PATP to DMAB. In the absence of a SiO 2 layer, SPR-excited hot electrons are preferentially transferred to Si instead of adsorbed O 2 molecules, leading to much lower PATP oxidation. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology

NASA Astrophysics Data System (ADS)

Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akin, Tayfun

2017-02-01

This paper introduces an 80x80 microbolometer array with a 35 μm pixel pitch operating in the 8-12 μm wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer approaches, MikroSens' CIR detector technology does not require the use of special high TCR materials like VOx or a-Si, instead, it allows to implement microbolometers with standard CMOS layers, where the suspended bulk micromachined structure is obtained by only few consecutive selective MEMS etching steps while protecting the wirebond pads with a simple lithograpy step. This approach not only reduces the fabrication cost but also increases the production yield. In addition, needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The CIR approach is used to implement an 80x80 FPA with 35 μm pixel pitch, namely MS0835A, using a 0.18 μm CMOS process. The fabricated sensor is measured to provide NETD (Noise Equivalent Temperature Difference) value of 163 mK at 17 fps (frames per second) and 71 mK at 4 fps with F/1.0 optics in a dewar environment. The measurement results of the wafer level vacuum packaged sensors with one side AR coating shows an NETD values of 112 mK at 4 fps with F/1.1 optics, i.e., demonstrates a good performance for high volume low-cost applications like advanced presence detection and human counting applications. The CIR approach of MikroSens is scalable and can be used to reduce the pixel pitch even further while increasing the array size if necessary for various other low-cost, high volume applications.

Silicon micromachined waveguides for millimeter and submillimeter wavelengths

NASA Technical Reports Server (NTRS)

Yap, Markus; Tai, Yu-Chong; Mcgrath, William R.; Walker, Christopher

1992-01-01

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.

Carbon dioxide capture using resin-wafer electrodeionization

DOEpatents

Lin, YuPo J.; Snyder, Seth W.; Trachtenberg, Michael S.; Cowan, Robert M.; Datta, Saurav

2015-09-08

The present invention provides a resin-wafer electrodeionization (RW-EDI) apparatus including cathode and anode electrodes separated by a plurality of porous solid ion exchange resin wafers, which when in use are filled with an aqueous fluid. The apparatus includes one or more wafers comprising a basic ion exchange medium, and preferably includes one or more wafers comprising an acidic ion exchange medium. The wafers are separated from one another by ion exchange membranes. The fluid within the acidic and/or basic ion exchange wafers preferably includes, or is in contact with, a carbonic anhydrase (CA) enzyme to facilitate conversion of bicarbonate ion to carbon dioxide within the acidic medium. A pH suitable for exchange of CO.sub.2 is electrochemically maintained within the basic and acidic ion exchange wafers by applying an electric potential across the cathode and anode.

Control of polysilicon on-film particulates with on-product measurements

NASA Astrophysics Data System (ADS)

Barker, Judith B.; Chain, Elizabeth E.; Plachecki, Vincent E.

1997-08-01

Historically, a number of in-line particle measurements have been performed on separate test wafers included with product wafers during polysilicon processes. By performing film thickness and particulate measurements directly on product wafers, instead, a number of benefits accrue: (1) reduced test wafer usage, (2) reduced test wafer storage requirements, (3) reduced need for equipment to reclaim test wafers, (4) reduced need for direct labor to reclaim test wafers, and (5) reduced engineering 'false alarms' due to incorrectly processed test wafers. Implementation of on-product measurements for the polysilicon diffusion process required a number of changes in both philosophy and methodology. We show the necessary steps to implementation of on-product particle measurements with concern for overall manufacturing efficiency and the need to maintain appropriate control. Particle results from the Tencor 7600 Surfscan are presented.

Method for synthesis of high quality graphene

DOEpatents

Lanzara, Alessandra [Piedmont, CA; Schmid, Andreas K [Berkeley, CA; Yu, Xiaozhu [Berkeley, CA; Hwang, Choonkyu [Albany, CA; Kohl, Annemarie [Beneditkbeuern, DE; Jozwiak, Chris M [Oakland, CA

2012-03-27

A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.

Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.

PubMed

Alphazan, Thibault; Díaz Álvarez, Adrian; Martin, François; Grampeix, Helen; Enyedi, Virginie; Martinez, Eugénie; Rochat, Névine; Veillerot, Marc; Dewitte, Marc; Nys, Jean-Philippe; Berthe, Maxime; Stiévenard, Didier; Thieuleux, Chloé; Grandidier, Bruno

2017-06-14

Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO 2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10 20 cm -3 . Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

Electrochemical method for defect delineation in silicon-on-insulator wafers

DOEpatents

Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Validation of Direct Analysis Real Time source/Time-of-Flight Mass Spectrometry for organophosphate quantitation on wafer surface.

PubMed

Hayeck, Nathalie; Ravier, Sylvain; Gemayel, Rachel; Gligorovski, Sasho; Poulet, Irène; Maalouly, Jacqueline; Wortham, Henri

2015-11-01

Microelectronic wafers are exposed to airborne molecular contamination (AMC) during the fabrication process of microelectronic components. The organophosphate compounds belonging to the dopant group are one of the most harmful groups. Once adsorbed on the wafer surface these compounds hardly desorb and could diffuse in the bulk of the wafer and invert the wafer from p-type to n-type. The presence of these compounds on wafer surface could have electrical effect on the microelectronic components. For these reasons, it is of importance to control the amount of these compounds on the surface of the wafer. As a result, a fast quantitative and qualitative analytical method, nondestructive for the wafers, is needed to be able to adjust the process and avoid the loss of an important quantity of processed wafers due to the contamination by organophosphate compounds. Here we developed and validated an analytical method for the determination of organic compounds adsorbed on the surface of microelectronic wafers using the Direct Analysis in Real Time-Time of Flight-Mass Spectrometry (DART-ToF-MS) system. Specifically, the developed methodology concerns the organophosphate group. Copyright © 2015 Elsevier B.V. All rights reserved.

Wafer hot spot identification through advanced photomask characterization techniques: part 2

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; Cho, Young; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2017-03-01

Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for mask end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on sub-resolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. To overcome the limitation of 1D metrics, there are numerous on-going industry efforts to better define wafer-predictive metrics through both standard mask metrology and aerial CD methods. Even with these improvements, the industry continues to struggle to define useful correlative metrics that link the mask to final device performance. In part 1 of this work, we utilized advanced mask pattern characterization techniques to extract potential hot spots on the mask and link them, theoretically, to issues with final wafer performance. In this paper, part 2, we complete the work by verifying these techniques at wafer level. The test vehicle (TV) that was used for hot spot detection on the mask in part 1 will be used to expose wafers. The results will be used to verify the mask-level predictions. Finally, wafer performance with predicted and verified mask/wafer condition will be shown as the result of advanced mask characterization. The goal is to maximize mask end user yield through mask-wafer technology harmonization. This harmonization will provide the necessary feedback to determine optimum design, mask specifications, and mask-making conditions for optimal wafer process margin.

Enhanced sensitivity of surface acoustic wave-based rate sensors incorporating metallic dot arrays.

PubMed

Wang, Wen; Shao, Xiuting; Liu, Xinlu; Liu, Jiuling; He, Shitang

2014-02-26

A new surface acoustic wave (SAW)-based rate sensor pattern incorporating metallic dot arrays was developed in this paper. Two parallel SAW delay lines with a reverse direction and an operation frequency of 80 MHz on a same X-112°Y LiTaO3 wafer are fabricated as the feedback of two SAW oscillators, and mixed oscillation frequency was used to characterize the external rotation. To enhance the Coriolis force effect acting on the SAW propagation, a copper (Cu) dot array was deposited along the SAW propagation path of the SAW devices. The approach of partial-wave analysis in layered media was referred to analyze the response mechanisms of the SAW based rate sensor, resulting in determination of the optimal design parameters. To improve the frequency stability of the oscillator, the single phase unidirectional transducers (SPUDTs) and combed transducer were used to form the SAW device to minimize the insertion loss and accomplish the single mode selection, respectively. Excellent long-term (measured in hours) frequency stability of 0.1 ppm/h was obtained. Using the rate table with high precision, the performance of the developed SAW rate sensor was evaluated experimentally; satisfactory detection sensitivity (16.7 Hz∙deg∙s(-1)) and good linearity were observed.

Enhanced Sensitivity of Surface Acoustic Wave-Based Rate Sensors Incorporating Metallic Dot Arrays

PubMed Central

Wang, Wen; Shao, Xiuting; Liu, Xinlu; Liu, Jiuling; He, Shitang

2014-01-01

A new surface acoustic wave (SAW)-based rate sensor pattern incorporating metallic dot arrays was developed in this paper. Two parallel SAW delay lines with a reverse direction and an operation frequency of 80 MHz on a same X-112°Y LiTaO3 wafer are fabricated as the feedback of two SAW oscillators, and mixed oscillation frequency was used to characterize the external rotation. To enhance the Coriolis force effect acting on the SAW propagation, a copper (Cu) dot array was deposited along the SAW propagation path of the SAW devices. The approach of partial-wave analysis in layered media was referred to analyze the response mechanisms of the SAW based rate sensor, resulting in determination of the optimal design parameters. To improve the frequency stability of the oscillator, the single phase unidirectional transducers (SPUDTs) and combed transducer were used to form the SAW device to minimize the insertion loss and accomplish the single mode selection, respectively. Excellent long-term (measured in hours) frequency stability of 0.1 ppm/h was obtained. Using the rate table with high precision, the performance of the developed SAW rate sensor was evaluated experimentally; satisfactory detection sensitivity (16.7 Hz·deg·s−1) and good linearity were observed. PMID:24577520

Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on <100> silicon wafers

PubMed Central

2013-01-01

In this work, nanoimprint lithography combined with standard anodization etching is used to make perfectly organised triangular arrays of vertical cylindrical alumina nanopores onto standard <100>−oriented silicon wafers. Both the pore diameter and the period of alumina porous array are well controlled and can be tuned: the periods vary from 80 to 460 nm, and the diameters vary from 15 nm to any required diameter. These porous thin layers are then successfully used as templates for the guided epitaxial growth of organised mono-crystalline silicon nanowire arrays in a chemical vapour deposition chamber. We report the densities of silicon nanowires up to 9 × 109 cm−2 organised in highly regular arrays with excellent diameter distribution. All process steps are demonstrated on surfaces up to 2 × 2 cm2. Specific emphasis was made to select techniques compatible with microelectronic fabrication standards, adaptable to large surface samples and with a reasonable cost. Achievements made in the quality of the porous alumina array, therefore on the silicon nanowire array, widen the number of potential applications for this technology, such as optical detectors or biological sensors. PMID:23773702

Mobil Solar Energy Corporation thin EFG octagons. Semiannual subcontract report, 1 April 1992--30 September 1992

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalejs, J.P.

1993-09-01

This report describes work carried out for the PVMaT program at Mobil Solar for the period covering April 1, 1992, to September 30, 1992. Mobil Solar is developing advanced technology for growing and cutting 200-{mu}m-thick edge-defined film-fed growth (EFG) octagon tubes that will reduce the manufacturing costs of 10-cm {times} 10-cm polycrystalline EFG silicon wafers. Mobil Solar has made progress in identifying factors that impact on thickness nonuniformity and means to reduce the deleterious impact of ambient-related effects that have caused reduction in crystal growth productivity and wafer yield. The current main obstacle to meeting material yield targets arises duemore » to the buckling produced by thermal stress. Studies of laser cutting of EFG silicon using ND:YAG and dye lasers are underway to develop reduced damage cutting methods. Mobil Solar has carried out design reviews for crystal growth and laser cutting equipment. A task has been initiated to evaluate new online sensors for crystal growth process control and to study implementation of advanced control concepts for productivity and yield improvements.« less

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Large area nanoimprint by substrate conformal imprint lithography (SCIL)

NASA Astrophysics Data System (ADS)

Verschuuren, Marc A.; Megens, Mischa; Ni, Yongfeng; van Sprang, Hans; Polman, Albert

2017-06-01

Releasing the potential of advanced material properties by controlled structuring materials on sub-100-nm length scales for applications such as integrated circuits, nano-photonics, (bio-)sensors, lasers, optical security, etc. requires new technology to fabricate nano-patterns on large areas (from cm2 to 200 mm up to display sizes) in a cost-effective manner. Conventional high-end optical lithography such as stepper/scanners is highly capital intensive and not flexible towards substrate types. Nanoimprint has had the potential for over 20 years to bring a cost-effective, flexible method for large area nano-patterning. Over the last 3-4 years, nanoimprint has made great progress towards volume production. The main accelerator has been the switch from rigid- to wafer-scale soft stamps and tool improvements for step and repeat patterning. In this paper, we discuss substrate conformal imprint lithography (SCIL), which combines nanometer resolution, low patterns distortion, and overlay alignment, traditionally reserved for rigid stamps, with the flexibility and robustness of soft stamps. This was made possible by a combination of a new soft stamp material, an inorganic resist, combined with an innovative imprint method. Finally, a volume production solution will be presented, which can pattern up to 60 wafers per hour.

An Innovative Metal Ions Sensitive “Test Paper” Based on Virgin Nanoporous Silicon Wafer: Highly Selective to Copper(II)

NASA Astrophysics Data System (ADS)

Li, Shaoyuan; Chen, Xiuhua; Ma, Wenhui; Ding, Zhao; Zhang, Cong; Chen, Zhengjie; He, Xiao; Shang, Yudong; Zou, Yuxin

2016-11-01

Developing an innovative “Test Paper” based on virgin nanoporous silicon (NPSi) which shows intense visible emission and excellent fluorescence stability. The visual fluorescence quenching “Test Paper” was highly selective and sensitive recognizing Cu2+ at μmol/L level. Within the concentration range of 5 × 10-7 ~50 × 10-7mol/L, the linear regression equation of IPL = 1226.3-13.6[CCu2+] (R = 0.99) was established for Cu2+ quantitative detection. And finally, Cu2+ fluorescence quenching mechanism of NPSi prober was proposed by studying the surface chemistry change of NPSi and metal ions immersed-NPSi using XPS characterization. The results indicate that SiHx species obviously contribute to the PL emission of NPSi, and the introduce of oxidization state and the nonradiative recombination center are responsible for the PL quenching. These results demonstrate how virgin NPSi wafer can serve as Cu2+ sensor. This work is of great significant to promote the development of simple instruments that could realize rapid, visible and real-time detection of various toxic metal ions.

Overcoming low-alignment signal contrast induced alignment failure by alignment signal enhancement

NASA Astrophysics Data System (ADS)

Lee, Byeong Soo; Kim, Young Ha; Hwang, Hyunwoo; Lee, Jeongjin; Kong, Jeong Heung; Kang, Young Seog; Paarhuis, Bart; Kok, Haico; de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; Mason, Christopher; Aarts, Igor; de Boeij, Wim P.

2016-03-01

Overlay is one of the key factors which enables optical lithography extension to 1X node DRAM manufacturing. It is natural that accurate wafer alignment is a prerequisite for good device overlay. However, alignment failures or misalignments are commonly observed in a fab. There are many factors which could induce alignment problems. Low alignment signal contrast is one of the main issues. Alignment signal contrast can be degraded by opaque stack materials or by alignment mark degradation due to processes like CMP. This issue can be compounded by mark sub-segmentation from design rules in combination with double or quadruple spacer process. Alignment signal contrast can be improved by applying new material or process optimization, which sometimes lead to the addition of another process-step with higher costs. If we can amplify the signal components containing the position information and reduce other unwanted signal and background contributions then we can improve alignment performance without process change. In this paper we use ASML's new alignment sensor (as was introduced and released on the NXT:1980Di) and sample wafers with special stacks which can induce poor alignment signal to demonstrate alignment and overlay improvement.

Internal gas and liquid distributor for electrodeionization device

DOEpatents

Lin, YuPo J.; Snyder, Seth W.; Henry, Michael P.; Datta, Saurav

2016-05-17

The present invention provides a resin-wafer electrodeionization (RW-EDI) apparatus including cathode and anode electrodes separated by a plurality of porous solid ion exchange resin wafers, which when in use are filled with an aqueous fluid. The apparatus includes one or more wafers comprising a basic ion exchange medium, and preferably includes one or more wafers comprising an acidic ion exchange medium. The wafers are separated from one another by ion exchange membranes. The gas and aqueous fluid are introduced into each basic wafer via a porous gas distributor which disperses the gas as micro-sized bubbles laterally throughout the distributor before entering the wafer. The fluid within the acidic and/or basic ion exchange wafers preferably includes, or is in contact with, a carbonic anhydrase (CA) enzyme or inorganic catalyst to facilitate conversion of bicarbonate ion to carbon dioxide within the acidic medium.

Support apparatus for semiconductor wafer processing

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Torres, Kenneth J.

2003-06-10

A support apparatus for minimizing gravitational stress in semiconductor wafers, and particularly silicon wafers, during thermal processing. The support apparatus comprises two concentric circular support structures disposed on a common support fixture. The two concentric circular support structures, located generally at between 10 and 70% and 70 and 100% and preferably at 35 and 82.3% of the semiconductor wafer radius, can be either solid rings or a plurality of spaced support points spaced apart from each other in a substantially uniform manner. Further, the support structures can have segments removed to facilitate wafer loading and unloading. In order to withstand the elevated temperatures encountered during semiconductor wafer processing, the support apparatus, including the concentric circular support structures and support fixture can be fabricated from refractory materials, such as silicon carbide, quartz and graphite. The claimed wafer support apparatus can be readily adapted for use in either batch or single-wafer processors.

Electrically Conductive and Optically Active Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Liao, Lei; Li, Yujing; Zhang, Hua; Huang, Yu; Duan, Xiangfeng

2009-01-01

We report the synthesis of vertical silicon nanowire array through a two-step metal-assisted chemical etching of highly doped n-type silicon (100) wafers in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of the as-grown silicon nanowires is tunable from solid nonporous nanowires, nonporous/nanoporous core/shell nanowires, and entirely nanoporous nanowires by controlling the hydrogen peroxide concentration in the etching solution. The porous silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer, and are electrically conductive and optically active with visible photoluminescence. The combination of electronic and optical properties in the porous silicon nanowires may provide a platform for the novel optoelectronic devices for energy harvesting, conversion and biosensing. PMID:19807130

High-temperature degradation-free rapid thermal annealing of GaAs and InP

NASA Astrophysics Data System (ADS)

Pearton, Stephen J.; Katz, Avishay; Geva, Michael

1991-04-01

Rapid thermal annealing of GaAs and InP within enclosed SiC-coated graphite susceptors is shown to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. Two different types of susceptor were investigated-the first type must be charged with As or P prior to the annealing cycles while the second type incorporates small reservoirs into the susceptor which provide a continuous overpressure of the group V species. Degradation-free annealing of patterned metallized wafers is possible using the latter type of susceptor. The activation of Si and Be implants in GaAs by RTA is also discussed.

An Advanced Multi-Sensor Acousto-Ultrasonic Structural Health Monitoring System: Development and Aerospace Demonstration.

PubMed

Smithard, Joel; Rajic, Nik; van der Velden, Stephen; Norman, Patrick; Rosalie, Cedric; Galea, Steve; Mei, Hanfei; Lin, Bin; Giurgiutiu, Victor

2017-07-20

A key longstanding objective of the Structural Health Monitoring (SHM) research community is to enable the embedment of SHM systems in high value assets like aircraft to provide on-demand damage detection and evaluation. As against traditional non-destructive inspection hardware, embedded SHM systems must be compact, lightweight, low-power and sufficiently robust to survive exposure to severe in-flight operating conditions. Typical Commercial-Off-The-Shelf (COTS) systems can be bulky, costly and are often inflexible in their configuration and/or scalability, which militates against in-service deployment. Advances in electronics have resulted in ever smaller, cheaper and more reliable components that facilitate the development of compact and robust embedded SHM systems, including for Acousto-Ultrasonics (AU), a guided plate-wave inspection modality that has attracted strong interest due mainly to its capacity to furnish wide-area diagnostic coverage with a relatively low sensor density. This article provides a detailed description of the development, testing and demonstration of a new AU interrogation system called the Acousto Ultrasonic Structural health monitoring Array Module⁺ (AUSAM⁺). This system provides independent actuation and sensing on four Piezoelectric Wafer Active Sensor (PWAS) elements with further sensing on four Positive Intrinsic Negative (PIN) photodiodes for intensity-based interrogation of Fiber Bragg Gratings (FBG). The paper details the development of a novel piezoelectric excitation amplifier, which, in conjunction with flexible acquisition-system architecture, seamlessly provides electromechanical impedance spectroscopy for PWAS diagnostics over the full instrument bandwidth of 50 KHz-5 MHz. The AUSAM⁺ functionality is accessed via a simple hardware object providing a myriad of custom software interfaces that can be adapted to suit the specific requirements of each individual application.

An Advanced Multi-Sensor Acousto-Ultrasonic Structural Health Monitoring System: Development and Aerospace Demonstration

PubMed Central

Smithard, Joel; Rajic, Nik; Norman, Patrick; Rosalie, Cedric; Galea, Steve; Mei, Hanfei; Lin, Bin; Giurgiutiu, Victor

2017-01-01

A key longstanding objective of the Structural Health Monitoring (SHM) research community is to enable the embedment of SHM systems in high value assets like aircraft to provide on-demand damage detection and evaluation. As against traditional non-destructive inspection hardware, embedded SHM systems must be compact, lightweight, low-power and sufficiently robust to survive exposure to severe in-flight operating conditions. Typical Commercial-Off-The-Shelf (COTS) systems can be bulky, costly and are often inflexible in their configuration and/or scalability, which militates against in-service deployment. Advances in electronics have resulted in ever smaller, cheaper and more reliable components that facilitate the development of compact and robust embedded SHM systems, including for Acousto-Ultrasonics (AU), a guided plate-wave inspection modality that has attracted strong interest due mainly to its capacity to furnish wide-area diagnostic coverage with a relatively low sensor density. This article provides a detailed description of the development, testing and demonstration of a new AU interrogation system called the Acousto Ultrasonic Structural health monitoring Array Module+ (AUSAM+). This system provides independent actuation and sensing on four Piezoelectric Wafer Active Sensor (PWAS) elements with further sensing on four Positive Intrinsic Negative (PIN) photodiodes for intensity-based interrogation of Fiber Bragg Gratings (FBG). The paper details the development of a novel piezoelectric excitation amplifier, which, in conjunction with flexible acquisition-system architecture, seamlessly provides electromechanical impedance spectroscopy for PWAS diagnostics over the full instrument bandwidth of 50 KHz–5 MHz. The AUSAM+ functionality is accessed via a simple hardware object providing a myriad of custom software interfaces that can be adapted to suit the specific requirements of each individual application. PMID:28773193

Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch

NASA Astrophysics Data System (ADS)

Fukuda, Akira; Fukuda, Tetsuo; Fukunaga, Akira; Tsujimura, Manabu

2012-05-01

In the chemical mechanical polishing (CMP) process, uniform polishing up to near the wafer edge is essential to reduce edge exclusion and improve yield. In this study, we examine the influences of inherent wafer edge geometries, i.e., wafer edge roll-off and notch, on the CMP removal rate profile. We clarify the areas in which the removal rate profile is affected by the wafer edge roll-off and the notch, as well as the intensity of their effects on the removal rate profile. In addition, we propose the use of a small notch to reduce the influence of the wafer notch and present the results of an examination by finite element method (FEM) analysis.

Characterization of wafer-level bonded hermetic packages using optical leak detection

NASA Astrophysics Data System (ADS)

Duan, Ani; Wang, Kaiying; Aasmundtveit, Knut; Hoivik, Nils

2009-07-01

For MEMS devices required to be operated in a hermetic environment, one of the main reliability issues is related to the packaging methods applied. In this paper, an optical method for testing low volume hermetic cavities formed by anodic bonding between glass and SOI (silicon on insulator) wafer is presented. Several different cavity-geometry structures have been designed, fabricated and applied to monitor the hermeticity of wafer level anodic bonding. SOI wafer was used as the cap wafer on which the different-geometry structures were fabricated using standard MEMS technology. The test cavities were bonded using SOI wafers to glass wafers at 400C and 1000mbar pressure inside a vacuum bonding chamber. The bonding voltage varies from 200V to 600V. The bonding strength between glass and SOI wafer was mechanically tested using shear tester. The deformation amplitudes of the cavity cap surface were monitored by using an optical interferometer. The hermeticity of the glass-to-SOI wafer level bonding was characterized through observing the surface deformation in a 6 months period in atmospheric environment. We have observed a relatively stable micro vacuum-cavity.

Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C.; Li, H.; Huang, S. H.

2016-04-11

We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with themore » use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.« less

Hot embossed polyethylene through-hole chips for bead-based microfluidic devices.

PubMed

Chou, Jie; Du, Nan; Ou, Tina; Floriano, Pierre N; Christodoulides, Nicolaos; McDevitt, John T

2013-04-15

Over the past decade, there has been a growth of interest in the translation of microfluidic systems into real-world clinical practice, especially for use in point-of-care or near patient settings. While initial fabrication advances in microfluidics involved mainly the etching of silicon and glass, the economics of scaling of these materials is not amendable for point-of-care usage where single-test applications force cost considerations to be kept low and throughput high. As such, materials base more consistent with point-of-care needs is required. In this manuscript, the fabrication of a hot embossed, through-hole low-density polyethylene ensembles derived from an anisotropically etched silicon wafer is discussed. This semi-opaque polymer that can be easily sterilized and recycled provides low background noise for fluorescence measurements and yields more affordable cost than other thermoplastics commonly used for microfluidic applications such as cyclic olefin copolymer (COC). To fabrication through-hole microchips from this alternative material for microfluidics, a fabrication technique that uses a high-temperature, high-pressure resistant mold is described. This aluminum-based epoxy mold, serving as the positive master mold for embossing, is casted over etched arrays of pyramidal pits in a silicon wafer. Methods of surface treatment of the wafer prior to casting and PDMS casting of the epoxy are discussed to preserve the silicon wafer for future use. Changes in the thickness of polyethylene are observed for varying embossing temperatures. The methodology described herein can quickly fabricate 20 disposable, single use chips in less than 30 min with the ability to scale up 4 times by using multiple molds simultaneously. When coupled as a platform supporting porous bead sensors, as in the recently developed Programmable Bio-Nano-Chip, this bead chip system can achieve limits of detection, for the cardiac biomarker C-reactive protein, of 0.3 ng/mL, thereby demonstrating that the approach is compatible with high performance, real-world clinical measurements in the context of point-of-care testing. Copyright © 2012 Elsevier B.V. All rights reserved.

Wafer-level packaging with compression-controlled seal ring bonding

DOEpatents

Farino, Anthony J

2013-11-05

A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

Control wafer bow of InGaP on 200 mm Si by strain engineering

NASA Astrophysics Data System (ADS)

Wang, Bing; Bao, Shuyu; Made, Riko I.; Lee, Kwang Hong; Wang, Cong; Eng Kian Lee, Kenneth; Fitzgerald, Eugene A.; Michel, Jurgen

2017-12-01

When epitaxially growing III-V compound semiconductors on Si substrates the mismatch of coefficients of thermal expansion (CTEs) between III-V and Si causes stress and wafer bow. The wafer bow is deleterious for some wafer-scale processing especially when the wafer size is large. Strain engineering was applied in the epitaxy of InGaP films on 200 mm silicon wafers having high quality germanium buffers. By applying compressive strain in the InGaP films to compensate the tensile strain induced by CTE mismatch, wafer bow was decreased from about 100 μm to less than 50 μm. X-ray diffraction studies show a clear trend between the decrease of wafer bow and the compensation of CTE mismatch induced tensile strain in the InGaP layers. In addition, the anisotropic strain relaxation in InGaP films resulted in anisotropic wafer bow along two perpendicular (110) directions. Etch pit density and plane-view transmission electron microscopy characterizations indicate that threading dislocation densities did not change significantly due to the lattice-mismatch applied in the InGaP films. This study shows that strain engineering is an effective method to control wafer bow when growing III-V semiconductors on large size Si substrates.

Micro-miniature gas chromatograph column disposed in silicon wafers

DOEpatents

Yu, Conrad M.

2000-01-01

A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

NASA Astrophysics Data System (ADS)

Lee, Ho Ki; Baek, Kye Hyun; Shin, Kyoungsub

2017-06-01

As semiconductor devices are scaled down to sub-20 nm, process window of plasma etching gets extremely small so that process drift or shift becomes more significant. This study addresses one of typical process drift issues caused by consumable parts erosion over time and provides feasible solution by using virtual metrology (VM) based wafer-to-wafer control. Since erosion of a shower head has center-to-edge area dependency, critical dimensions (CDs) at the wafer center and edge area get reversed over time. That CD trend is successfully estimated on a wafer-to-wafer basis by a partial least square (PLS) model which combines variables from optical emission spectroscopy (OES), VI-probe and equipment state gauges. R 2 of the PLS model reaches 0.89 and its prediction performance is confirmed in a mass production line. As a result, the model can be exploited as a VM for wafer-to-wafer control. With the VM, advanced process control (APC) strategy is implemented to solve the CD drift. Three σ of CD across wafer is improved from the range (1.3-2.9 nm) to the range (0.79-1.7 nm). Hopefully, results introduced in this paper will contribute to accelerating implementation of VM based APC strategy in semiconductor industry.

Solar lens mission concept for interstellar exploration

NASA Astrophysics Data System (ADS)

Brashears, Travis; Lubin, Philip; Turyshev, Slava; Shao, Michael; Zhang, Qicheng

2015-09-01

The long standing approach to space travel has been to incorporate massive on-board electronics, probes and propellants to achieve space exploration. This approach has led to many great achievements in science, but will never help to explore the interstellar medium. Fortunately, a paradigm shift is upon us in how a spacecraft is constructed and propelled. This paper describes a mission concept to get to our Sun's Gravity Lens at 550AU in less than 10 years. It will be done by using DE-STAR, a scalable solar-powered phased-array laser in Earth Orbit, as a directed energy photon drive of low-mass wafersats. [1] [2] [3] [4] [5] With recent technologies a complete mission can be placed on a wafer including, power from an embedded radio nuclear thermal generator (RTG), PV, laser communications, imaging, photon thrusters for attitude control and other sensors. As one example, a futuristic 200 MW laser array consisting of 1 - 10 kw meter scale sub elements with a 100m baseline can propel a 10 gram wafer scale spacecraft with a 3m laser sail to 60AU/Year. Directed energy propulsion of low-mass spacecraft gives us an opportunity to capture images of Alpha Centauri and its planets, detailed imaging of the cosmic microwave background, set up interstellar communications by using gravity lenses around nearby stars to boost signals from interstellar probes, and much more. This system offers a very large range of missions allowing hundreds of wafer scale payload launches per day to reach this cosmological data reservoir. Directed Energy Propulsion is the only current technology that can provide a near-term path to utilize our Sun's Gravity Lens.

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

2017-09-01

Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be <1% over the area of a 7 cm × 7.5 cm wafer. The films are further characterized by Fourier-transform infrared spectroscopy, optical microscopy, and Hall measurements. Additionally, defect maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor)

2017-01-01

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sopori, Bhushan; Basnyat, Prakash; Devayajanam, Srinivas

2017-01-01

We present experimental results which show that oxygen-related precipitate nuclei (OPN) present in p-doped, n-type, Czochralski wafers can be dissolved using a flash-annealing process, yielding very high quality wafers for high-efficiency solar cells. Flash annealing consists of heating a wafer in an optical furnace to temperature between 1150 and 1250 degrees C for a short time. This process produces a large increase in the minority carrier lifetime (MCLT) and homogenizes each wafer. We have tested wafers from different axial locations of two ingots. All wafers reach nearly the same high value of MCLT. The OPN dissolution is confirmed by oxygenmore » analysis using Fourier transform infrared spectra and injection-level dependence of MCLT.« less

Wafer edge overlay control solution for N7 and beyond

NASA Astrophysics Data System (ADS)

van Haren, Richard; Calado, Victor; van Dijk, Leon; Hermans, Jan; Kumar, Kaushik; Yamashita, Fumiko

2018-03-01

Historically, the on-product overlay performance close to the wafer edge is lagging with respect to the inner part of the wafer. The reason for this is that wafer processing is less controlled close to the wafer edge as opposed to the rest of the wafer. It is generally accepted that Chemical Vapor Deposition (CVD) of stressed layers that cause wafer warp, wafer table contamination, Chemical Mechanical Polishing (CMP), and Reactive Ion Etch (RIE) may deteriorate the overlay performance and/or registration close to the wafer edge. For the N7 technology node and beyond, it is anticipated that the tight on-product overlay specification is required across the full wafer which includes the edge region. In this work, we highlight one contributor that may negatively impact the on-product overlay performance, namely the etch step. The focus will be mainly on the wafer edge region but the remaining part of the wafer is considered as well. Three use-cases are examined: multiple Litho-Etch steps (LEn), contact hole layer etch, and the copper dual damascene etch. We characterize the etch contribution by considering the overlay measurement after resist development inspect (ADI) and after etch inspect (AEI). We show that the Yieldstar diffraction based overlay (μDBO) measurements can be utilized to characterize the etch contribution to the overlay budget. The effects of target asymmetry as well as overlay shifts are considered and compared with SEM measurements. Based on the results above, we propose a control solution aiming to reduce or even eliminate the delta between ADI and AEI. By doing so, target/mark to device offsets due to etch might be avoided.

Noncontact sheet resistance measurement technique for wafer inspection

NASA Astrophysics Data System (ADS)

Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

1995-12-01

A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Highly Uniform 150 mm Diameter Multichroic Polarimeter Array Deployed for CMB Detection

NASA Technical Reports Server (NTRS)

Ho, Shuay-Pwu Patty; Austermann, Jason; Beall, James A.; Choi, Steve K.; Cothard, Nicholas F.; Crowley, Kevin; Datta, Rahul; Devlin, Mark J.; Duff, Shannon M.; Wollack, Edward J.

2016-01-01

The Advanced Atacama Cosmology Telescope Polarimeter is an upgraded receiver for the Atacama Cosmology Telescope, which has begun making measurements of the small angular scale polarization anisotropies in the Cosmic Microwave Background using the first of four new multichroic superconducting detector arrays. Here, we review all details of the optimization and characterization of this first array, which features 2012 AlMn transition edge sensor bolometers operating at 150 and 230 GHz. We present critical temperatures, thermal conductivities,saturation powers, time constants, and sensitivities for the array. The results show high uniformity across the 150 mm wafer and good performance in the field.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Temperature Dependent Electrical Properties of PZT Wafer

NASA Astrophysics Data System (ADS)

Basu, T.; Sen, S.; Seal, A.; Sen, A.

2016-04-01

The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

Wafer hot spot identification through advanced photomask characterization techniques

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; McMurran, Jeff; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2016-10-01

As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer's needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.

Epitaxial thinning process

NASA Technical Reports Server (NTRS)

Siegel, C. M. (Inventor)

1984-01-01

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Study for identification of beneficial uses of Space, phase 1. Volume 2, book 2: Technical report: results, conclusions and recommendations

NASA Technical Reports Server (NTRS)

1973-01-01

A variety of technologies were investigated to determine the benefits to be derived from space activities. The subjects accepted for product development are: (1) eutectics for cold cathodes, (2) higher putiry fiber optics, (3) fluidic wafers, (4) large germanium wafers for gamma ray camera, (5) improved batteries and capacitors, (6) optical filters, (7) corrosion resistant electrodes, (8) high strength carbon-based filaments for plastic reinforcement, and (9) new antibiotics. In addition, three ideas for services, involving disposal of radioactive wastes, blood analysis, and enhanced solar insolation were proposed.

Hybrid Integrated Platforms for Silicon Photonics

PubMed Central

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Design of a photonic integrated based optical interrogator

NASA Astrophysics Data System (ADS)

Ibrahim, Selwan K.; Farnan, Martin; Karabacak, Devrez M.

2017-02-01

Optical sensors based on Fiber Bragg Gratings (FBGs) are used in several applications and industries. In order for fiber optic sensors to compete with electrical sensors, several critical parameters of both the sensors and sensor interrogators need to be in place such as performance, cost, size, reliability relevant to the target application. Here we have developed a tunable laser based optical interrogator which delivers high performance (up to 8kHz sweep-rate and 120dB dynamic range) and precision (<100fm) by optimizing the laser calibration of a telecom tunable laser and incorporating optical periodic wavelength references (e.g. MZI) to correct and compensate for wavelength non-linearity and noise during operation. Scaling up optical sensing systems to deliver high level of performance over a large number of sensors is enabled by synchronizing multiple interrogators. Further improvements can be achieved by using photonic integrated circuit (PIC) technology which reduces the footprint, cost, and improves performance. There exists several PIC technology platforms (e.g. InP, Si, TriPlex) that could be used to develop different optical building blocks used in the interrogator. Such building blocks include the tunable laser, couplers, photodiodes, MZIs, etc. are available on the InP platform. Here we have demonstrated the operation of an interrogator using PIC technology to replace many of the discrete optical components. The design and chip manufacturing was carried out as part of an InP multi-project wafer (MPW) run under the EU PARADIGM project. A custom package supporting fiber arrays was designed and manufactured to demonstrate the PIC functionality in an optical interrogator.

Hair-based sensors for micro-autonomous systems

NASA Astrophysics Data System (ADS)

Sadeghi, Mahdi M.; Peterson, Rebecca L.; Najafi, Khalil

2012-06-01

We seek to harness microelectromechanical systems (MEMS) technologies to build biomimetic devices for low-power, high-performance, robust sensors and actuators on micro-autonomous robot platforms. Hair is used abundantly in nature for a variety of functions including balance and inertial sensing, flow sensing and aerodynamic (air foil) control, tactile and touch sensing, insulation and temperature control, particle filtering, and gas/chemical sensing. Biological hairs, which are typically characterized by large surface/volume ratios and mechanical amplification of movement, can be distributed in large numbers over large areas providing unprecedented sensitivity, redundancy, and stability (robustness). Local neural transduction allows for space- and power-efficient signal processing. Moreover by varying the hair structure and transduction mechanism, the basic hair form can be used for a wide diversity of functions. In this paper, by exploiting a novel wafer-level, bubble-free liquid encapsulation technology, we make arrays of micro-hydraulic cells capable of electrostatic actuation and hydraulic amplification, which enables high force/high deflection actuation and extremely sensitive detection (sensing) at low power. By attachment of cilia (hair) to the micro-hydraulic cell, air flow sensors with excellent sensitivity (< few cm/s) and dynamic range (> 10 m/s) have been built. A second-generation design has significantly reduced the sensor response time while maintaining sensitivity of about 2 cm/s and dynamic range of more than 15 m/s. These sensors can be used for dynamic flight control of flying robots or for situational awareness in surveillance applications. The core biomimetic technologies developed are applicable to a broad range of sensors and actuators.

Hyperspectral CMOS imager

NASA Astrophysics Data System (ADS)

Jerram, P. A.; Fryer, M.; Pratlong, J.; Pike, A.; Walker, A.; Dierickx, B.; Dupont, B.; Defernez, A.

2017-11-01

CCDs have been used for many years for Hyperspectral imaging missions and have been extremely successful. These include the Medium Resolution Imaging Spectrometer (MERIS) [1] on Envisat, the Compact High Resolution Imaging Spectrometer (CHRIS) on Proba and the Ozone Monitoring Instrument operating in the UV spectral region. ESA are also planning a number of further missions that are likely to use CCD technology (Sentinel 3, 4 and 5). However CMOS sensors have a number of advantages which means that they will probably be used for hyperspectral applications in the longer term. There are two main advantages with CMOS sensors: First a hyperspectral image consists of spectral lines with a large difference in intensity; in a frame transfer CCD the faint spectral lines have to be transferred through the part of the imager illuminated by intense lines. This can lead to cross-talk and whilst this problem can be reduced by the use of split frame transfer and faster line rates CMOS sensors do not require a frame transfer and hence inherently will not suffer from this problem. Second, with a CMOS sensor the intense spectral lines can be read multiple times within a frame to give a significant increase in dynamic range. We will describe the design, and initial test of a CMOS sensor for use in hyperspectral applications. This device has been designed to give as high a dynamic range as possible with minimum cross-talk. The sensor has been manufactured on high resistivity epitaxial silicon wafers and is be back-thinned and left relatively thick in order to obtain the maximum quantum efficiency across the entire spectral range

Development of n+-in-p planar pixel quadsensor flip-chipped with FE-I4 readout ASICs

NASA Astrophysics Data System (ADS)

Unno, Y.; Kamada, S.; Yamamura, K.; Yamamoto, H.; Hanagaki, K.; Hori, R.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Takashima, R.; Tojo, J.; Kono, T.; Nagai, R.; Saito, S.; Sugibayashi, K.; Hirose, M.; Jinnouchi, O.; Sato, S.; Sawai, H.; Hara, K.; Sato, Kz.; Sato, Kj.; Iwabuchi, S.; Suzuki, J.

2017-01-01

We have developed flip-chip modules applicable to the pixel detector for the HL-LHC. New radiation-tolerant n+-in-p planar pixel sensors of a size of four FE-I4 application-specific integrated circuits (ASICs) are laid out in a 6-in wafer. Variation in readout connection for the pixels at the boundary of ASICs is implemented in the design of quadsensors. Bump bonding technology is developed for four ASICs onto one quadsensor. Both sensors and ASICs are thinned to 150 μm before bump bonding, and are held flat with vacuum chucks. Using lead-free SnAg solder bumps, we encounter deficiency with large areas of disconnected bumps after thermal stress treatment, including irradiation. Surface oxidation of the solder bumps is identified as a critical source of this deficiency after bump bonding trials, using SnAg bumps with solder flux, indium bumps, and SnAg bumps with a newly-introduced hydrogen-reflow process. With hydrogen-reflow, we establish flux-less bump bonding technology with SnAg bumps, appropriate for mass production of the flip-chip modules with thin sensors and thin ASICs.

A novel C-shaped, gold nanoparticle coated, embedded polymer waveguide for localized surface plasmon resonance based detection.

PubMed

Prabhakar, Amit; Mukherji, Soumyo

2010-12-21

In this study, a novel embedded optical waveguide based sensor which utilizes localized surface plasmon resonance of gold nanoparticles coated on a C-shaped polymer waveguide is being reported. The sensor, as designed, can be used as an analysis chip for detection of minor variations in the refractive index of its microenvironment, which makes it suitable for wide scale use as an affinity biosensor. The C-shaped waveguide coupled with microfluidic channel was fabricated by single step patterning of SU8 on an oxidized silicon wafer. The absorbance due to the localized surface plasmon resonance (LSPR) of SU8 waveguide bound gold nano particle (GNP) was found to be linear with refractive index changes between 1.33 and 1.37. A GNP coated C-bent waveguide of 200 μ width with a bend radius of 1 mm gave rise to a sensitivity of ~5 ΔA/RIU at 530 nm as compared to the ~2.5 ΔA/RIU (refractive index units) of the same dimension bare C-bend SU8 waveguide. The resolution of the sensor probe was ~2 × 10(-4) RIU.

Nanophotonic sensors for oil sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Salemink, Huub W.; Liu, Yazhao

2017-02-01

The proof of concept for a photonic cavity sensor for oil, water and gas detection is reported. The optical design employs an optimized photonic crystal cavity with fluidic infiltration of gas, water or (reservoir) oils. The 3D design and simulation is discussed, followed by the nanofabrication in standard silicon on insulator wafers (SoI). Using an optofluidic cicuit with PDMS channels, the fluid flow to the photonic cavity is controlled with syringe pumps. The variations in dielectric value (refractive index) change with the involved media result in a shift of the cavity resonant wavelength. For fluid change from water to typical oil (refractive index difference of 0.12), we report a wavelenght shift of up to 12 nm at the measurement wavelength of 1550 nm, in very good agreement with the simulations. We follow the optical response at a fixed wavelength, when feeding alternate flows or bubbles of oil/water through the optofluidic chip, and observe the flow pattern on camera. Finally we discuss the outlook and antifouling of the sensor with a special design. This work is supported by Shell Global Solutions. Appl.Phys.Lett., 106, 031116 (2015) J.Lightw.Technol., 33, 3672 (2015)

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors.

PubMed

Malinowski, Pawel E; Georgitzikis, Epimitheas; Maes, Jorick; Vamvaka, Ioanna; Frazzica, Fortunato; Van Olmen, Jan; De Moor, Piet; Heremans, Paul; Hens, Zeger; Cheyns, David

2017-12-10

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10 -6 A/cm² at -2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

Design and Characterization of a Sensorized Microfluidic Cell-Culture System with Electro-Thermal Micro-Pumps and Sensors for Cell Adhesion, Oxygen, and pH on a Glass Chip.

PubMed

Bonk, Sebastian M; Stubbe, Marco; Buehler, Sebastian M; Tautorat, Carsten; Baumann, Werner; Klinkenberg, Ernst-Dieter; Gimsa, Jan

2015-07-30

We combined a multi-sensor glass-chip with a microfluidic channel grid for the characterization of cellular behavior. The grid was imprinted in poly-dimethyl-siloxane. Mouse-embryonal/fetal calvaria fibroblasts (MC3T3-E1) were used as a model system. Thin-film platinum (Pt) sensors for respiration (amperometric oxygen electrode), acidification (potentiometric pH electrodes) and cell adhesion (interdigitated-electrodes structures, IDES) allowed us to monitor cell-physiological parameters as well as the cell-spreading behavior. Two on-chip electro-thermal micro-pumps (ETμPs) permitted the induction of medium flow in the system, e.g., for medium mixing and drug delivery. The glass-wafer technology ensured the microscopic observability of the on-chip cell culture. Connecting Pt structures were passivated by a 1.2 μm layer of silicon nitride (Si3N4). Thin Si3N4 layers (20 nm or 60 nm) were used as the sensitive material of the pH electrodes. These electrodes showed a linear behavior in the pH range from 4 to 9, with a sensitivity of up to 39 mV per pH step. The oxygen sensors were circular Pt electrodes with a sensor area of 78.5 μm(2). Their sensitivity was 100 pA per 1% oxygen increase in the range from 0% to 21% oxygen (air saturated). Two different IDES geometries with 30- and 50-μm finger spacings showed comparable sensitivities in detecting the proliferation rate of MC3T3 cells. These cells were cultured for 11 days in vitro to test the biocompatibility, microfluidics and electric sensors of our system under standard laboratory conditions.

Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

NASA Astrophysics Data System (ADS)

Sánchez, L. A.; Moretón, A.; Guada, M.; Rodríguez-Conde, S.; Martínez, O.; González, M. A.; Jiménez, J.

2018-05-01

Today's photovoltaic market is dominated by multicrystalline silicon (mc-Si) based solar cells with around 70% of worldwide production. In order to improve the quality of the Si material, a proper characterization of the electrical activity in mc-Si solar cells is essential. A full-wafer characterization technique such as photoluminescence imaging (PLi) provides a fast inspection of the wafer defects, though at the expense of the spatial resolution. On the other hand, a study of the defects at a microscopic scale can be achieved through the light-beam induced current technique. The combination of these macroscopic and microscopic resolution techniques allows a detailed study of the electrical activity of defects in mc-Si solar cells. In this work, upgraded metallurgical-grade Si solar cells are studied using these two techniques.

Monitoring of fatigue damage in composite lap-joints using guided waves and FBG sensors

NASA Astrophysics Data System (ADS)

Karpenko, Oleksii; Khomenko, Anton; Koricho, Ermias; Haq, Mahmoodul; Udpa, Lalita

2016-02-01

Adhesive bonding is being increasingly employed in many applications as it offers possibility of light-weighting and efficient multi-material joining along with reduction in time and cost of manufacturing. However, failure initiation and progression in critical components like joints, specifically in fatigue loading is not well understood, which necessitates reliable NDE and SHM techniques to ensure structural integrity. In this work, concurrent guided wave (GW) and fiber Bragg grating (FBG) sensor measurements were used to monitor fatigue damage in adhesively bonded composite lap-joints. In the present set-up, one FBG sensor was strategically embedded in the adhesive bond-line of a lap-joint, while two other FBGs were bonded on the surface of the adherends. Full spectral responses of FBG sensors were collected and compared at specific intervals of fatigue loading. In parallel, guided waves were actuated and sensed using PZT wafers mounted on the composite adherends. Experimental results demonstrated that time-of-flight (ToF) of the fundamental modes transmitted through the bond-line and spectral response of FBG sensors were sensitive to fatigue loading and damage. Combination of guided wave and FBG measurements provided the desired redundancy and synergy in the data to evaluate the degradation in bond-line properties. Measurements taken in the presence of continuously applied load replicated the in-situ/service conditions. The approach shows promise in understanding the behavior of bonded joints subjected to complex loading.

Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Chien, Nguyen Viet; Van Duy, Nguyen; Vuong, Dang Duc; Lam, Nguyen Huu; Hoa, Nguyen Duc; Van Hieu, Nguyen; Chien, Nguyen Duc

2015-01-01

The detection of H2S, an important gaseous molecule that has been recently marked as a highly toxic environmental pollutant, has attracted increasing attention. We fabricate a wafer-scale SnO2 thin film sensitized with CuO islands using microelectronic technology for the improved detection of the highly toxic H2S gas. The SnO2-CuO island sensor exhibits significantly enhanced H2S gas response and reduced operating temperature. The thickness of CuO islands strongly influences H2S sensing characteristics, and the highest H2S gas response is observed with 20 nm-thick CuO islands. The response value (Ra/Rg) of the SnO2-CuO island sensor to 5 ppm H2S is as high as 128 at 200 °C and increases nearly 55-fold compared with that of the bare SnO2 thin film sensor. Meanwhile, the response of the SnO2-CuO island sensor to H2 (250 ppm), NH3 (250 ppm), CO (250 ppm), and LPG (1000 ppm) are low (1.3-2.5). The enhanced gas response and selectivity of the SnO2-CuO island sensor to H2S gas is explained by the sensitizing effect of CuO islands and the extension of electron depletion regions because of the formation of p-n junctions.

Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder

NASA Astrophysics Data System (ADS)

Sparks, D.; Queen, G.; Weston, R.; Woodward, G.; Putty, M.; Jordan, L.; Zarabadi, S.; Jayakar, K.

2001-11-01

The fabrication and reliability of a solder wafer-to-wafer bonding process is discussed. Using a solder reflow process allows vacuum packaging to be accomplished with unplanarized complementary metal-oxide semiconductor (CMOS) surface topography. This capability enables standard CMOS processes, and integrated microelectromechanical systems devices to be packaged at the chip-level. Alloy variations give this process the ability to bond at lower temperatures than most alternatives. Factors affecting hermeticity, shorts, Q values, shifting cavity pressure, wafer saw cleanliness and corrosion resistance will be covered.

Optic probe for semiconductor characterization

DOEpatents

Sopori, Bhushan L [Denver, CO; Hambarian, Artak [Yerevan, AM

2008-09-02

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

ROI on yield data analysis systems through a business process management strategy

NASA Astrophysics Data System (ADS)

Rehani, Manu; Strader, Nathan; Hanson, Jeff

2005-05-01

The overriding motivation for yield engineering is profitability. This is achieved through application of yield management. The first application is to continually reduce waste in the form of yield loss. New products, new technologies and the dynamic state of the process and equipment keep introducing new ways to cause yield loss. In response, the yield management efforts have to continually come up with new solutions to minimize it. The second application of yield engineering is to aid in accurate product pricing. This is achieved through predicting future results of the yield engineering effort. The more accurate the yield prediction, the more accurate the wafer start volume, the more accurate the wafer pricing. Another aspect of yield prediction pertains to gauging the impact of a yield problem and predicting how long that will last. The ability to predict such impacts again feeds into wafer start calculations and wafer pricing. The question then is that if the stakes on yield management are so high why is it that most yield management efforts are run like science and engineering projects and less like manufacturing? In the eighties manufacturing put the theory of constraints1 into practice and put a premium on stability and predictability in manufacturing activities, why can't the same be done for yield management activities? This line of introspection led us to define and implement a business process to manage the yield engineering activities. We analyzed the best known methods (BKM) and deployed a workflow tool to make them the standard operating procedure (SOP) for yield managment. We present a case study in deploying a Business Process Management solution for Semiconductor Yield Engineering in a high-mix ASIC environment. We will present a description of the situation prior to deployment, a window into the development process and a valuation of the benefits.

Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, S.; Yan, F.; Zaunbracher, K.

2011-07-01

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finishedmore » cell performance.« less

An Update on Structural Seal Development at NASA GRC

NASA Technical Reports Server (NTRS)

Dunlap, Pat; Steinetz, Bruce; Finkbeiner, Josh; DeMange, Jeff; Taylor, Shawn; Daniels, Chris; Oswald, Jay

2006-01-01

A viewgraph presentation describing advanced structural seal development for NASA exploration is shown. The topics include: 1) GRC Structural Seals Team Research Areas; 2) Research Areas & Objective; 3) Wafer Seal Geometry/Flow Investigations; 4) Wafer Seal Installation DOE Study; 5) Results of Wafer Seal Installation DOE Study; 6) Wafer Geometry Study: Thickness Variations; 7) Wafer Geometry Study: Full-Size vs. Half-Size Wafers; 8) Spring Tube Seal Development; 9) Resiliency Improvement for Rene 41 Spring Tube; 10) Spring Tube Seals: Go-Forward Plan; 11) High Temperature Seal Preloader Development: TZM Canted Coil Spring; 12) TZM Canted Coil Spring Development; 13) Arc Jet Test Rig Development; and 14) Arc Jet Test Rig Status.

Strong emission of terahertz radiation from nanostructured Ge surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Chul; Maeng, Inhee; Kee, Chul-Sik, E-mail: cskee@gist.ac.kr

2015-06-29

Indirect band gap semiconductors are not efficient emitters of terahertz radiation. Here, we report strong emission of terahertz radiation from germanium wafers with nanostructured surfaces. The amplitude of THz radiation from an array of nano-bullets (nano-cones) is more than five (three) times larger than that from a bare-Ge wafer. The power of the terahertz radiation from a Ge wafer with an array of nano-bullets is comparable to that from n-GaAs wafers, which have been widely used as a terahertz source. We find that the THz radiation from Ge wafers with the nano-bullets is even more powerful than that from n-GaAsmore » for frequencies below 0.6 THz. Our results suggest that introducing properly designed nanostructures on indirect band gap semiconductor wafers is a simple and cheap method to improve the terahertz emission efficiency of the wafers significantly.« less

Method for nanomachining high aspect ratio structures

DOEpatents

Yun, Wenbing; Spence, John; Padmore, Howard A.; MacDowell, Alastair A.; Howells, Malcolm R.

2004-11-09

A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Wafer scale oblique angle plasma etching

DOEpatents

Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

2017-05-23

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Evaluation of the Technical Feasibility and Effective Cost of Various Wafer Thicknesses for the Manufacture of Solar Cells

NASA Technical Reports Server (NTRS)

1979-01-01

Fourteen wafering characterization runs were completed on a wire saw. Wafer thickness/taper uniformity was excellent. Several alternations and design adjustments were made, facilitating saw operation. A wafering characterization cycle was initiated, and is close to completion. A cell characterization cycle was initiated.

Evaluation of the technical feasibility and effective cost of various wafer thicknesses for the manufacture of solar cells

NASA Technical Reports Server (NTRS)

1978-01-01

Three wafering demonstration runs were completed on the Yasunaga wire saw. Wafer thickness/taper uniformity is excellent. Many small problems were encountered with Yasunaga accessories, slowing the effort. A wafer characterization cycle was defined and will be initiated during the next period.

Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing

NASA Astrophysics Data System (ADS)

Adamczyk, Krzysztof; Søndenâ, Rune; Stokkan, Gaute; Looney, Erin; Jensen, Mallory; Lai, Barry; Rinio, Markus; Di Sabatino, Marisa

2018-02-01

In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity.

Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

NASA Astrophysics Data System (ADS)

Goto, Hiroyuki; Pan, Lian-Sheng; Tanaka, Masafumi; Kashima, Kazuhiko

2001-06-01

The properties of nitrogen-doped and hydrogen-annealed Czochralski-grown silicon (NHA-CZ-Si) wafers were investigated in this study. The quality of the subsurface was investigated by monitoring the generation lifetime of minority carriers, as measured by the capacitance-time measurements of a metal oxide silicon capacitor (MOS C-t). The intrinsic gettering (IG) ability was investigated by determining the nickel concentration on the surface and in the subsurface as measured by graphite furnace atomic absorption spectrometry (GFAAS) after the wafer was deliberately contaminated with nickel. From the results obtained, the generation lifetimes of these NHA-CZ-Si wafers were determined to be almost the same as, or a little longer than those of epitaxial wafers, and the IG ability was proportional to the total volume of oxygen precipitates [i.e., bulk micro defects (BMDs)], which was influenced by the oxygen and nitrogen concentrations in the wafers. Therefore, it is suggested that the subsurface of the NHA-CZ-Si wafers is of good quality and the IG capacity is controllable by the nitrogen and oxygen concentrations in the wafers.

Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)

NASA Astrophysics Data System (ADS)

Cha, Giho; Kim, Youngchul; Jang, Hyungwoo; Kang, Hyunsoon; Song, Changsub

2001-10-01

Silicon direct bonding technique was successfully applied for the fabrication of high voltage IGBT (Insulated Gate Bipolar Transistor). In this work, 5 inch, p-type CZ wafer for handle wafer and n-type FZ wafer for device wafer were used and bonding the two wafers was performed at reduced pressure (1mmTorr) using a modified vacuum bonding machine. Since the breakdown voltage in high voltage device has been determined by the remained thickness of device layer, grinding and CMP steps should be carefully designed in order to acquire better uniformity of device layer. In order to obtain the higher removal rate and the final better uniformity of device layer, the harmony of the two processes must be considered. We found that the concave type of grinding profile and the optimal thickness of ground wafer was able to reduce the process time of CMP step and also to enhance the final thickness uniformity of device layer up to +/- 1%. Finally, when compared epitaxy layer with SDB wafer, the SDB wafer was found to be more favorable in terms of cost and electrical characteristics.

Arrangement, Dopant Source, And Method For Making Solar Cells

DOEpatents

Rohatgi, Ajeet; Krygowski, Thomas W.

1999-10-26

Disclosed is an arrangement, dopant source and method used in the fabrication of photocells that minimize handling of cell wafers and involve a single furnace step. First, dopant sources are created by depositing selected dopants onto both surfaces of source wafers. The concentration of dopant that is placed on the surface is relatively low so that the sources are starved sources. These sources are stacked with photocell wafers in alternating orientation in a furnace. Next, the temperature is raised and thermal diffusion takes place whereby the dopant leaves the source wafers and becomes diffused in a cell wafer creating the junctions necessary for photocells to operate. The concentration of dopant diffused into a single side of the cell wafer is proportional to the concentration placed on the respective dopant source facing the side of the cell wafer. Then, in the same thermal cycle, a layer of oxide is created by introducing oxygen into the furnace environment after sufficient diffusion has taken place. Finally, the cell wafers receive an anti-reflective coating and electrical contacts for the purpose of gathering electrical charge.

Microemulsion-Based Mucoadhesive Buccal Wafers: Wafer Formation, In Vitro Release, and Ex Vivo Evaluation.

PubMed

Pham, Minh Nguyet; Van Vo, Toi; Tran, Van-Thanh; Tran, Phuong Ha-Lien; Tran, Thao Truong-Dinh

2017-10-01

Microemulsion has the potentials to enhance dissolution as well as facilitate absorption and permeation of poorly water-soluble drugs through biological membranes. However, its application to govern a controlled release buccal delivery for local treatment has not been discovered. The aim of this study is to develop microemulsion-based mucoadhesive wafers for buccal delivery based on an incorporation of the microemulsion with mucoadhesive agents and mannitol. Ratio of oil to surfactant to water in the microemulsion significantly impacted quality of the wafers. Furthermore, the combination of carbopol and mannitol played a key role in forming the desired buccal wafers. The addition of an extra 50% of water to the formulation was suitable for wafer formation by freeze-drying, which affected the appearance and distribution of carbopol in the wafers. The amount of carbopol was critical for the enhancement of mucoadhesive properties and the sustained drug release patterns. Release study presented a significant improvement of the drug release profile following sustained release for 6 h. Ex vivo mucoadhesive studies provided decisive evidence to the increased retention time of wafers along with the increased carbopol content. The success of this study indicates an encouraging strategy to formulate a controlled drug delivery system by incorporating microemulsions into mucoadhesive wafers.

Automatic cassette to cassette radiant impulse processor

NASA Astrophysics Data System (ADS)

Sheets, Ronald E.

1985-01-01

Single wafer rapid annealing using high temperature isothermal processing has become increasingly popular in recent years. In addition to annealing, this process is also being investigated for suicide formation, passivation, glass reflow and alloying. Regardless of the application, there is a strong necessity to automate in order to maintain process control, repeatability, cleanliness and throughput. These requirements have been carefully addressed during the design and development of the Model 180 Radiant Impulse Processor which is a totally automatic cassette to cassette wafer processing system. Process control and repeatability are maintained by a closed loop optical pyrometer system which maintains the wafer at the programmed temperature-time conditions. Programmed recipes containing up to 10 steps may be easily entered on the computer keyboard or loaded in from a recipe library stored on a standard 5 {1}/{4″} floppy disk. Cold wall heating chamber construction, controlled environment (N 2, A, forming gas) and quartz wafer carriers prevent contamination of the wafer during high temperature processing. Throughputs of 150-240 wafers per hour are achieved by quickly heating the wafer to temperature (450-1400°C) in 3-6 s with a high intensity, uniform (± 1%) radiant flux of 100 {W}/{cm 2}, parallel wafer handling system and a wafer cool down stage.

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

NASA Astrophysics Data System (ADS)

Avizemer, Dan; Sharoni, Ofir; Oshemkov, Sergey; Cohen, Avi; Dayan, Asaf; Khurana, Ranjan; Kewley, Dave

2015-07-01

Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [Proc. SPIE 6152, 615225 (2006)]. The process involves locally and selectively attenuating the deep ultraviolet light which goes through the photomask to the wafer. The input data for the CDC process in the wafer fab is typically taken from wafer CDU data, which is measured by metrology tools such as wafer-critical dimension-scanning electron microscopy (CD-SEM), wafer optical scatterometry, or wafer level CD (WLCD). The CD correction process uses the CDU data in order to create an attenuation correction contour, which is later applied by the in-situ ultrashort laser system of the CDC to locally change the transmission of the photomask. The ultrashort pulsed laser system creates small, partially scattered, Shade-In-Elements (also known as pixels) by focusing the laser beam inside the quartz bulk of the photomask. This results in the formation of a localized, intravolume, quartz modified area, which has a different refractive index than the quartz bulk itself. The CDC process flow for improving wafer CDU in a wafer fab with detailed explanations of the shading elements formation inside the quartz by the ultrashort pulsed laser is reviewed.

Quantum efficiency and dark current evaluation of a backside illuminated CMOS image sensor

NASA Astrophysics Data System (ADS)

Vereecke, Bart; Cavaco, Celso; De Munck, Koen; Haspeslagh, Luc; Minoglou, Kyriaki; Moore, George; Sabuncuoglu, Deniz; Tack, Klaas; Wu, Bob; Osman, Haris

2015-04-01

We report on the development and characterization of monolithic backside illuminated (BSI) imagers at imec. Different surface passivation, anti-reflective coatings (ARCs), and anneal conditions were implemented and their effect on dark current (DC) and quantum efficiency (QE) are analyzed. Two different single layer ARC materials were developed for visible light and near UV applications, respectively. QE above 75% over the entire visible spectrum range from 400 to 700 nm is measured. In the spectral range from 260 to 400 nm wavelength, QE values above 50% over the entire range are achieved. A new technique, high pressure hydrogen anneal at 20 atm, was applied on photodiodes and improvement in DC of 30% for the BSI imager with HfO2 as ARC as well as for the front side imager was observed. The entire BSI process was developed 200 mm wafers and evaluated on test diode structures. The knowhow is then transferred to real imager sensors arrays.

Thermal Conductivity Measurement of Liquids by Using a Suspended Microheater

NASA Astrophysics Data System (ADS)

Oh, Dong-Wook

2017-10-01

In this paper, the traditional 3ω method is modified in order to measure the thermal conductivity of a droplet of liquid. The 3ω sensor is microfabricated using bulk silicon etching on a silicon wafer to form a microheater on a suspended bridge structure. The Si substrate of over 400 μ m thickness beneath the microheater is etched away so that the sample liquid can fill the gap created between the heater and the bottom boundary of the sensor. The frequency of the sinusoidal heating pulses that are generated from the heater is controlled such that the thermal penetration depth is much smaller than the thickness of the liquid layer. The temperature oscillation of the sample fluid is measured at the thin-film heater to calculate the thermal conductivity of the surrounding fluid. The thermal conductivity and measured values of the de-ionized water and ethanol show a good agreement with the theoretical values at room temperature.

Progress of the Swedish-Australian research collaboration on uncooled smart IR sensors

NASA Astrophysics Data System (ADS)

Liddiard, Kevin C.; Ringh, Ulf; Jansson, Christer; Reinhold, Olaf

1998-10-01

Progress is reported on the development of uncooled microbolometer IR focal plane detector arrays (IRFPDA) under a research collaboration between the Swedish Defence Research Establishment (FOA), and the Defence Science and Technology Organization (DSTO), Australia. The paper describes current focal plane detector arrays designed by Electro-optic Sensor Design (EOSD) for readout circuits developed by FOA. The readouts are fabricated in 0.8 micrometer CMOS, and have a novel signal conditioning and 16 bit parallel ADC design. The arrays are post-processed at DSTO on wafers supplied by FOA. During the past year array processing has been carried out at a new microengineering facility at DSTO, Salisbury, South Australia. A number of small format 16 X 16 arrays have been delivered to FOA for evaluation, and imaging has been demonstrated with these arrays. A 320 X 240 readout with 320 parallel 16 bit ADCs has been developed and IRFPDAs for this readout have been fabricated and are currently being evaluated.

Low loss hollow-core waveguide on a silicon substrate

NASA Astrophysics Data System (ADS)

Yang, Weijian; Ferrara, James; Grutter, Karen; Yeh, Anthony; Chase, Chris; Yue, Yang; Willner, Alan E.; Wu, Ming C.; Chang-Hasnain, Connie J.

2012-07-01

Optical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

Lab-on-CMOS Integration of Microfluidics and Electrochemical Sensors

PubMed Central

Huang, Yue; Mason, Andrew J.

2013-01-01

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms. PMID:23939616

Lab-on-CMOS integration of microfluidics and electrochemical sensors.

PubMed

Huang, Yue; Mason, Andrew J

2013-10-07

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms.

Graphene- and aptamer-based electrochemical biosensor

NASA Astrophysics Data System (ADS)

Xu, Ke; Meshik, Xenia; Nichols, Barbara M.; Zakar, Eugene; Dutta, Mitra; Stroscio, Michael A.

2014-05-01

This study investigated the effectiveness of a graphene- and aptamer-based field-effect-transistor-like (FET-like) sensor in detecting lead and potassium ions. The sensor consists of a graphene-covered Si/SiO2 wafer with thrombin binding aptamer (TBA) attached to the graphene layer and terminated by a methylene blue (MB) molecule. K+ and Pb2+ both bind to TBA and cause a conformational change, which results in MB moving closer to the graphene surface and donating an electron. Thus, the abundance of K+ and Pb2+ can be determined by monitoring the current across the source and drain channel. Device transfer curves were obtained with ambipolar field effect observed. Current readings were taken for K+ concentrations of 100 μM to 50 mM and Pb2+ concentrations of 10 μM to 10 mM. As expected, I d decreased as ion concentration increased. In addition, there was a negative shift in V Dirac in response to increased ion concentration.

Design and performance test of a MEMS vibratory gyroscope with a novel AGC force rebalance control

NASA Astrophysics Data System (ADS)

Sung, Woon-Tahk; Sung, Sangkyung; Lee, Jang Gyu; Kang, Taesam

2007-10-01

In this paper, the development and performance test results of a laterally oscillating MEMS gyroscope using a novel force rebalance control strategy are presented. The micromachined structure and electrodes are fabricated using the deep reactive ion etching (DRIE) and anodic wafer bonding process. The high quality factor required for the resonance-based sensor is achieved using a vacuum-sealed device package. A systematic design approach of the force rebalance control is applied via a modified automatic gain control (AGC) method. The rebalance control design takes advantages of a novel AGC loop modification, which allows the approximation of the system's dynamics into a simple linear form. Using the proposed modification of AGC and the rebalance strategy that maintains a biased oscillation, a number of performance improvements including bandwidth extension and widened operating range were observed to be achieved. Finally, the experimental results of the gyroscope's practical application verify the feasibility and performance of the developed sensor.

Diode laser sensor to monitor HCL in a plasma etch reactor

NASA Astrophysics Data System (ADS)

Kim, Suhong; Klimecky, Pete; Chou, Shang-I.; Jeffries, Jay B.; Terry, Fred L., Jr.; Hanson, Ronald K.

2002-09-01

Absorption measurements of HCl during plasma etching of poly-silicon are made using the P(4) transition in the first vibrational overtone band near 1.79 μm. Single path absorption provides a real-time HCl monitor during etching of six-inch wafers in a commercial Lam Research 9400SE reactor at the University of Michigan. Wavelength modulation at 10.7 MHz is used to distinguish the absorption signal from the strong plasma emission. The laser center frequency is ramp-tuned at 500 Hz providing an HCl measurement every 2ms. Direct absorption measurements without the plasma are used to calibrate the wavelength modulation signal. The minimum detectable absorbance was 5x(10)-6 with 50 ms averaging, leading to an HCl detection limit of ~(10)12cm-3. For a given ratio of the feedstock HBr/Cl2, the measured HCl concentration tracks the average etch rate. These measurements demonstrate the feasibility of a real-time diode laser-based etch rate sensor.

HED-TIE: A wafer-scale approach for fabricating hybrid electronic devices with trench isolated electrodes

NASA Astrophysics Data System (ADS)

Banerjee, Sreetama; Bülz, Daniel; Solonenko, Dmytro; Reuter, Danny; Deibel, Carsten; Hiller, Karla; Zahn, Dietrich R. T.; Salvan, Georgeta

2017-05-01

Organic-inorganic hybrid electronic devices (HEDs) offer opportunities for functionalities that are not easily obtainable with either organic or inorganic materials individually. In the strive for down-scaling the channel length in planar geometry HEDs, the best results were achieved with electron beam lithography or nanoimprint lithography. Their application on the wafer level is, however, cost intensive and time consuming. Here, we propose trench isolated electrode (TIE) technology as a fast, cost effective, wafer-level approach for the fabrication of planar HEDs with electrode gaps in the range of 100 nm. We demonstrate that the formation of the organic channel can be realized by deposition from solution as well as by the thermal evaporation of organic molecules. To underline one key feature of planar HED-TIEs, namely full accessibility of the active area of the devices by external stimuli such as light, 6,13-bis (triisopropylsilylethynyl) (TIPS)-pentacene/Au HED-TIEs are successfully tested for possible application as hybrid photodetectors in the visible spectral range.

New overlay measurement technique with an i-line stepper using embedded standard field image alignment marks for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2017-06-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules require addition backside processing of the wafer; thus an accurate alignment between the front and backside of the wafer is mandatory. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 μm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8]. Therefore, the available overlay measurement techniques are not suitable if overlay and alignment marks are realized at the bonding interface of a wafer stack which consists of both a silicon device and a silicon carrier wafer. The former used EVG 40NT automated overlay measurement system, which use two opposite positioned microscopes inspecting simultaneous the wafer back and front side, is not capable measuring embedded overlay marks. In this work, the non-contact infrared alignment system of the Nikon i-line Stepper NSR-SF150 for both the alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the offsets between all different FIA's into account, after correcting the wafer rotation induced FIA position errors, hence an overlay for the stacked wafers can be determined. The developed approach has been validated by a standard back to front side application. The overlay was measured and determined using both, the EVG NT40 automated measurement system with special overlay marks and the measurement of the FIA marks of the front and back side layer. A comparison of both results shows mismatches in x and y translations smaller than 200 nm, which is relatively small compared to the overlay tolerances of +/-500 nm for the back to front side process. After the successful validation of the developed technique, special wafer stacks with FIA alignment marks in the bonding interface are fabricated. Due to the super IR light transparency of both doubled side polished wafers, the embedded FIA marks generate a stable and clear signal for accurate x and y wafer coordinate positioning. The FIA marks of the device wafer top layer were measured under standard condition in a developed photoresist mask without IR illumination. Following overlay calculation shows an overlay of less than 200 nm, which enables very accurate process condition for highly scaled TSV integration and advanced substrate integration into IHP's 0.25/0.13 μm SiGe:C BiCMOS technology. The presented method can be applied for both the standard back to front side process technologies and also new temporary and permanent wafer bonding applications.

Dry etch method for texturing silicon and device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan

2017-07-25

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Patterned wafer geometry grouping for improved overlay control

NASA Astrophysics Data System (ADS)

Lee, Honggoo; Han, Sangjun; Woo, Jaeson; Park, Junbeom; Song, Changrock; Anis, Fatima; Vukkadala, Pradeep; Jeon, Sanghuck; Choi, DongSub; Huang, Kevin; Heo, Hoyoung; Smith, Mark D.; Robinson, John C.

2017-03-01

Process-induced overlay errors from outside the litho cell have become a significant contributor to the overlay error budget including non-uniform wafer stress. Previous studies have shown the correlation between process-induced stress and overlay and the opportunity for improvement in process control, including the use of patterned wafer geometry (PWG) metrology to reduce stress-induced overlay signatures. Key challenges of volume semiconductor manufacturing are how to improve not only the magnitude of these signatures, but also the wafer to wafer variability. This work involves a novel technique of using PWG metrology to provide improved litho-control by wafer-level grouping based on incoming process induced overlay, relevant for both 3D NAND and DRAM. Examples shown in this study are from 19 nm DRAM manufacturing.

Methane production using resin-wafer electrodeionization

DOEpatents

Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

2014-03-25

The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

Reticle variation influence on manufacturing line and wafer device performance

NASA Astrophysics Data System (ADS)

Nistler, John L.; Spurlock, Kyle

1994-01-01

Cost effective manufacturing of devices at 0.5, 0.35 and 0.25μm geometries will be highly dependent on a companys' ability to obtain an economic return on investment. The high capital investment in equipment and facilities, not to mention the related chemical and wafer costs, for producing 200mm silicon wafers requires aspects of wafer processing to be tightly controlled. Reduction in errors and enhanced yield management requires early correction or avoidance of reticle problems. It is becoming increasingly important to recognize and track all pertinent factors impacting both the technical and financial viability of a wafer manufacturing fabrication area. Reticle related effects on wafer manufacturing can be costly and affect the total quality perceived by the device customer.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Hieu T.; Jensen, Mallory A.; Li, Li

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active sub-grain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) have distinctly different spatial distributions, and are asymmetric across the sub-grain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially-resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm thatmore » high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the sub-grain boundaries is due to their inclination below the wafer surface. Based on the luminescence asymmetries, the sub-grain boundaries are shown to share a common inclination locally, rather than be orientated randomly.« less

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

NASA Technical Reports Server (NTRS)

Powell, J. Anthony

2001-01-01

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Development, Fabrication, and Characterization of Hydrogel Based Piezoresistive Pressure Sensors with Perforated Diaphragms

PubMed Central

Orthner, M.P.; Buetefisch, Sebastian; Magda, J.; Rieth, L.W.; Solzbacher, F.

2010-01-01

Hydrogels have been demonstrated to swell in response to a number of external stimuli including pH, CO2, glucose, and ionic strength making them useful for detection of metabolic analytes. To measure hydrogel swelling pressure, we have fabricated and tested novel perforated diaphragm piezoresistive pressure sensor arrays that couple the pressure sensing diaphragm with a perforated semi-permeable membrane. The 2×2 arrays measure approximately 3 × 5 mm2 and consist of four square sensing diaphragms with widths of 1.0, 1.25, and 1.5 mm used to measure full scale pressures of 50, 25, and 5 kPa, respectively. An optimized geometry of micro pores was etched in silicon diaphragm to allow analyte diffusion into the sensor cavity where the hydrogel material is located. The 14-step front side wafer process was carried out by a commercial foundry service (MSF, Frankfurt (Oder), Germany) and diaphragm pores were created using combination of potassium hydroxide (KOH) etching and deep reactive ion etching (DRIE). Sensor characterization was performed (without the use of hydrogels) using a custom bulge testing apparatus that simultaneously measured deflection, pressure, and electrical output. Test results are used to quantify the sensor sensitivity and demonstrate proof-of-concept. Simulations showed that the sensitivity was slightly improved for the perforated diaphragm designs while empirical electrical characterization showed that the perforated diaphragm sensors were slightly less sensitive than solid diaphragm sensors. This discrepancy is believed to be due to the influence of compressive stress found within passivation layers and poor etching uniformity. The new perforated diaphragm sensors were fully functional with sensitivities ranging from 23 to 252 μV/V-kPa (FSO= 5 to 80mV), and show a higher nonlinearity at elevated pressures than identical sensors with solid diaphragms. Sensors (1.5×1.5 mm2) with perforated diaphragms (pores=40 μm) have a nonlinearity of approximately 10% while for the identical solid diaphragm sensor it was roughly 3 % over the entire 200 kPa range. This is the first time piezoresistive pressure sensors with integrated diffusion pores for detection of hydrogel swelling pressure have been fabricated and tested. PMID:20657810

Fabrication of uniform nanoscale cavities via silicon direct wafer bonding.

PubMed

Thomson, Stephen R D; Perron, Justin K; Kimball, Mark O; Mehta, Sarabjit; Gasparini, Francis M

2014-01-09

Measurements of the heat capacity and superfluid fraction of confined (4)He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments(3), bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data. Exceptionally flat, 5 cm diameter, 375 µm thick Si wafers with about 1 µm variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned(2) in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water(4). The wafers are bonded at RT and then annealed at ~1,100 °C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale.

Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene

DTIC Science & Technology

2014-08-01

Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene by Eugene Zakar, Wayne Churaman, Collin Becker, Bernard Rod, Luke...Laboratory Adelphi, MD 20783-1138 ARL-TR-7025 August 2014 Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene...Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6

Optima XE Single Wafer High Energy Ion Implanter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Satoh, Shu; Ferrara, Joseph; Bell, Edward

2008-11-03

The Optima XE is the first production worthy single wafer high energy implanter. The new system combines a state-of-art single wafer endstation capable of throughputs in excess of 400 wafers/hour with a production-proven RF linear accelerator technology. Axcelis has been evolving and refining RF Linac technology since the introduction of the NV1000 in 1986. The Optima XE provides production worthy beam currents up to energies of 1.2 MeV for P{sup +}, 2.9 MeV for P{sup ++}, and 1.5 MeV for B{sup +}. Energies as low as 10 keV and tilt angles as high as 45 degrees are also available., allowingmore » the implanter to be used for a wide variety of traditional medium current implants to ensure high equipment utilization. The single wafer endstation provides precise implant angle control across wafer and wafer to wafer. In addition, Optima XE's unique dose control system allows compensation of photoresist outgassing effects without relying on traditional pressure-based methods. We describe the specific features, angle control and dosimetry of the Optima XE and their applications in addressing the ever-tightening demands for more precise process controls and higher productivity.« less

Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

NASA Astrophysics Data System (ADS)

Turner, K. T.; Spearing, S. M.

2002-12-01

Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

Extended vertical range roughness measurements in non-ideal environments

NASA Astrophysics Data System (ADS)

Creath, Katherine

2011-09-01

This paper describes recent research into developing an extended range dynamic interferometry technique where the range is extended vertically to enhance surface roughness measurements made in non-ideal environments. Utilizing short pulses from two sources on either side of a frame transfer in a CCD sensor, data can be taken fast enough in noisy shop environments to make measurements in the presence of vibration, and air turbulence. A key application of this technique is monitoring of surface roughness of large optics during the polishing process by making in situ measurements from fine grind through to the final polish. It is anticipated that this monitoring can help speed up what is now a very lengthy process. This same technique is applicable to many other types of measurements including MEMS devices, as it is not affected by dispersion in windows covering devices, and for measuring features on flat panel display glass or semiconductor wafers. This paper describes the technique, and presents results of a variety of sample measurements including: bare glass in various states of polish from fine grind to final polish, scratches and pits in a roughened semiconductor wafer, a DMD MEMS device, and various calibration standards. Performance in terms of repeatabilitity of step heights and roughness for this proof of concept is in the +/-2% range.

Piezoelectric micromachined ultrasonic transducers for fingerprint sensing

NASA Astrophysics Data System (ADS)

Lu, Yipeng

Fingerprint identification is the most prevalent biometric technology due to its uniqueness, universality and convenience. Over the past two decades, a variety of physical mechanisms have been exploited to capture an electronic image of a human fingerprint. Among these, capacitive fingerprint sensors are the ones most widely used in consumer electronics because they are fabricated using conventional complementary metal oxide semiconductor (CMOS) integrated circuit technology. However, capacitive fingerprint sensors are extremely sensitive to finger contamination and moisture. This thesis will introduce an ultrasonic fingerprint sensor using a PMUT array, which offers a potential solution to this problem. In addition, it has the potential to increase security, as it allows images to be collected at various depths beneath the epidermis, providing images of the sub-surface dermis layer and blood vessels. Firstly, PMUT sensitivity is maximized by optimizing the layer stack and electrode design, and the coupling coefficient is doubled via series transduction. Moreover, a broadband PMUT with 97% fractional bandwidth is achieved by utilizing a thinner structure excited at two adjacent mechanical vibration modes with overlapping bandwidth. In addition, we proposed waveguide PMUTs, which function to direct acoustic waves, confine acoustic energy, and provide mechanical protection for the PMUT array. Furthermore, PMUT arrays were fabricated with different processes to form the membrane, including front-side etching with a patterned sacrificial layer, front-side etching with additional anchor, cavity SOI wafers and eutectic bonding. Additionally, eutectic bonding allows the PMUT to be integrated with CMOS circuits. PMUTs were characterized in the mechanical, electrical and acoustic domains. Using transmit beamforming, a narrow acoustic beam was achieved, and high-resolution (sub-100 microm) and short-range (~1 mm) pulse-echo ultrasonic imaging was demonstrated using a steel phantom. Finally, a novel ultrasonic fingerprint sensor was demonstrated using a 24x8 array of 22 MHz PMUTs with 100 microm pitch, fully integrated with 180 nm CMOS circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20x8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D PDMS fingerprint phantom (10 mm by 8 mm) at a 1.2 mm distance from the array.

Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire

NASA Technical Reports Server (NTRS)

Anthony, Thomas R. (Inventor)

1985-01-01

Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process of this invention involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques

NASA Astrophysics Data System (ADS)

Syed, Ahmed Rashid

Among the great physical challenges faced by the current front-end semiconductor equipment manufacturers is the accurate and repeatable surface temperature measurement of wafers during various fabrication steps. Close monitoring of temperature is essential in that it ensures desirable device characteristics to be reliably reproduced across various wafer lots. No where is the need to control temperature more pronounced than it is during Rapid Thermal Processing (RTP) which involves temperature ramp rates in excess of 200°C/s. This dissertation presents an elegant and practical approach to solve the wafer surface temperature estimation problem, in context of RTP, by deploying hardware that acquires the necessary data while preserving the integrity and purity of the wafer. In contrast to the widely used wafer-contacting (and hence contaminating) methods, such as bonded thermocouples, or environment sensitive schemes, such as light-pipes and infrared pyrometry, the proposed research explores the concept of utilizing Lamb (acoustic) waves to detect changes in wafer surface temperature, during RTP. Acoustic waves are transmitted to the wafer via an array of quartz rods that normally props the wafer inside an RTP chamber. These waves are generated using piezoelectric transducers affixed to the bases of the quartz rods. The group velocity of Lamb waves traversing the wafer surface undergoes a monotonic decrease with rise in wafer temperature. The correspondence of delay in phase of the received Lamb waves and the ambient temperature, along all direct paths between sending and receiving transducers, yields a psuedo real-time thermal image of the wafer. Although the custom built hardware-setup implements the above "proof-of-concept" scheme by transceiving acoustic signals at a single frequency, the real-world application will seek to enhance the data acquistion. rate (>1000 temperature measurements per seconds) by sending and receiving Lamb waves at multiple frequencies (by employing broadband quartz rod-transducer assembles). Experimental results, as predicted by prior rigorous simulations, prove that the temperature measurement accuracy obtained through several dynamic runs using the above specified approach, is better than +/-2°C. Furthermore, these results are highly repeatable and independent of wafer treatment conditions, thereby extolling the versatility and immunity of the new method from environmental conditions.

A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology

NASA Astrophysics Data System (ADS)

Tu, Hongen; Xu, Yong

2012-07-01

This paper reports a simple flexible electronics technology that is compatible with silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) processes. Compared with existing technologies such as direct fabrication on flexible substrates and transfer printing, the main advantage of this technology is its post-SOI-CMOS compatibility. Consequently, high-performance and high-density CMOS circuits can be first fabricated on SOI wafers using commercial foundry and then be integrated into flexible substrates. The yield is also improved by eliminating the transfer printing step. Furthermore, this technology allows the integration of various sensors and microfluidic devices. To prove the concept of this technology, flexible MOSFETs have been demonstrated.

Optical characterization of extremely small volumes of liquid in sub-micro-holes by simultaneous reflectivity, ellipsometry and spectrometry.

PubMed

Holgado, M; Casquel, R; Sánchez, B; Molpeceres, C; Morales, M; Ocaña, J L

2007-10-01

We have fabricated and characterized a lattice of submicron cone-shaped holes on a SiO(2)/Si wafer. Reflectivity profiles as a function of angle of incidence and polarization, phase shift and spectrometry are obtained for several fluids with different refractive indexes filling the holes. The optical setup allows measuring in the center of a single hole and collecting all data simultaneously, which can be applied for measuring extremely low volumes of fluid (in the order of 0.1 femtolitres) and label-free immunoassays, as it works as a refractive index sensor. A three layer film stack model is defined to perform theoretical calculations.

Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

NASA Technical Reports Server (NTRS)

Cassell, Alan M.; Meyyappan, M.

2004-01-01

The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical bio-sensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

Plasma Enhanced Growth of Carbon Nanotubes For Ultrasensitive Biosensors

NASA Technical Reports Server (NTRS)

Cassell, Alan M.; Li, J.; Ye, Q.; Koehne, J.; Chen, H.; Meyyappan, M.

2004-01-01

The multitude of considerations facing nanostructure growth and integration lends itself to combinatorial optimization approaches. Rapid optimization becomes even more important with wafer-scale growth and integration processes. Here we discuss methodology for developing plasma enhanced CVD growth techniques for achieving individual, vertically aligned carbon nanostructures that show excellent properties as ultrasensitive electrodes for nucleic acid detection. We utilize high throughput strategies for optimizing the upstream and downstream processing and integration of carbon nanotube electrodes as functional elements in various device types. An overview of ultrasensitive carbon nanotube based sensor arrays for electrochemical biosensing applications and the high throughput methodology utilized to combine novel electrode technology with conventional MEMS processing will be presented.

Block copolymer modified surfaces for conjugation of biomacromolecules with control of quantity and activity.

PubMed

Li, Xin; Wang, Mengmeng; Wang, Lei; Shi, Xiujuan; Xu, Yajun; Song, Bo; Chen, Hong

2013-01-29

Polymer brush layers based on block copolymers of poly(oligo(ethylene glycol) methacrylate) (POEGMA) and poly(glycidyl methacrylate) (PGMA) were formed on silicon wafers by activators generated by electron transfer atom transfer radical polymerization (AGET ATRP). Different types of biomolecule can be conjugated to these brush layers by reaction of PGMA epoxide groups with amino groups in the biomolecule, while POEGMA, which resists nonspecific protein adsorption, provides an antifouling environment. Surfaces were characterized by water contact angle, ellipsometry, and Fourier transform infrared spectroscopy (FTIR) to confirm the modification reactions. Phase segregation of the copolymer blocks in the layers was observed by AFM. The effect of surface properties on protein conjugation was investigated using radiolabeling methods. It was shown that surfaces with POEGMA layers were protein resistant, while the quantity of protein conjugated to the diblock copolymer modified surfaces increased with increasing PGMA layer thickness. The activity of lysozyme conjugated on the surface could also be controlled by varying the thickness of the copolymer layer. When biotin was conjugated to the block copolymer grafts, the surface remained resistant to nonspecific protein adsorption but showed specific binding of avidin. These properties, that is, well-controlled quantity and activity of conjugated biomolecules and specificity of interaction with target biomolecules may be exploited for the improvement of signal-to-noise ratio in sensor applications. More generally, such surfaces may be useful as biological recognition elements of high specificity for functional biomaterials.

Texturization of diamond-wire-sawn multicrystalline silicon wafer using Cu, Ag, or Ag/Cu as a metal catalyst

NASA Astrophysics Data System (ADS)

Wang, Shing-Dar; Chen, Ting-Wei

2018-06-01

In this work, Cu, Ag, or Ag/Cu was used as a metal catalyst to study the surface texturization of diamond-wire-sawn (DWS) multi-crystalline silicon (mc-Si) wafer by a metal-assisted chemical etching (MACE) method. The DWS wafer was first etched by standard HF-HNO3 acidic etching, and it was labeled as AE-DWS wafer. The effects of ratios of Cu(NO3)2:HF, AgNO3:HF, and AgNO3:Cu(NO3)2 on the morphology of AE-DWS wafer were investigated. After the process of MACE, the wafer was treated with a NaF/H2O2 solution. In this process, H2O2 etched the nanostructure, and NaF removed the oxidation layer. The Si {1 1 1} plane was revealed by etching the wafer in a mixture of 0.03 M Cu(NO3)2 and 1 M HF at 55 °C for 2.5 min. These parallel Si {1 1 1} planes replaced some parallel saw marks on the surface of AE-DWS wafers without forming a positive pyramid or an inverted pyramid structure. The main topography of the wafer is comprised of silicon nanowires grown in <1 0 0> direction when Ag or Ag/Cu was used as a metal catalyst. When silicon is etched in a mixed solution of Cu(NO3)2, AgNO3, HF and H2O2 at 55 °C with a concentration ratio of [Cu2+]/[Ag+] of 50 or at 65 °C with a concentration ratio of [Cu2+]/[Ag+] of 33, a quasi-inverted pyramid structure can be obtained. The reflectivity of the AE-DWS wafers treated with MACE is lower than that of the multiwire-slurry-sawn (MWSS) mc-Si wafers treated with traditional HF + HNO3 etching.

Multi-wafer bonding technology for the integration of a micromachined Mirau interferometer

NASA Astrophysics Data System (ADS)

Wang, Wei-Shan; Lullin, Justine; Froemel, Joerg; Wiemer, Maik; Bargiel, Sylwester; Passilly, Nicolas; Gorecki, Christophe; Gessner, Thomas

2015-02-01

The paper presents the multi-wafer bonding technology as well as the integration of electrical connection to the zscanner wafer of the micromachined array-type Mirau interferometer. A Mirau interferometer, which is a key-component of optical coherence tomography (OCT) microsystem, consists of a microlens doublet, a MOEMS Z-scanner, a focusadjustment spacer and a beam splitter plate. For the integration of this MOEMS device heterogeneous bonding of Si, glass and SOI wafers is necessary. Previously, most of the existing methods for multilayer wafer bonding require annealing at high temperature, i.e., 1100°C. To be compatible with MEMS devices, bonding of different material stacks at temperatures lower than 400°C has also been investigated. However, if more components are involved, it becomes less effective due to the alignment accuracy or degradation of surface quality of the not-bonded side after each bonding operation. The proposed technology focuses on 3D integration of heterogeneous building blocks, where the assembly process is compatible with the materials of each wafer stack and with position accuracy which fits optical requirement. A demonstrator with up to 5 wafers bonded lower than 400°C is presented and bond interfaces are evaluated. To avoid the complexity of through wafer vias, a design which creates electrical connections along vertical direction by mounting a wafer stack on a flip chip PCB is proposed. The approach, which adopts vertically-stacked wafers along with electrical connection functionality, provides not only a space-effective integration of MOEMS device but also a design where the Mirau stack can be further integrated with other components of the OCT microsystem easily.

Boron diffusion in silicon devices

DOEpatents

Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

2010-09-07

Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

Method and Apparatus for Obtaining a Precision Thickness in Semiconductor and Other Wafers

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2002-01-01

A method and apparatus for processing a wafer comprising a material selected from an electrical semiconducting material and an electrical insulating material is presented. The wafer has opposed generally planar front and rear sides and a peripheral edge, wherein said wafer is pressed against a pad in the presence of a slurry to reduce its thickness. The thickness of the wafer is controlled by first forming a recess such as a dimple on the rear side of the wafer. A first electrical conducting strip extends from a first electrical connection means to the base surface of the recess to the second electrical connector. The first electrical conducting strip overlies the base surface of the recess. There is also a second electrical conductor with an electrical potential source between the first electrical connector and the second electrical connector to form. In combination with the first electrical conducting strip, the second electrical conductor forms a closed electrical circuit, and an electrical current flows through the closed electrical circuit. From the front side of the wafer the initial thickness of the wafer is reduced by lapping until the base surface of the recess is reached. The conductive strip is at least partially removed from the base surface to automatically stop the lapping procedure and thereby achieve the desired thickness.

Wafer-level vacuum/hermetic packaging technologies for MEMS

NASA Astrophysics Data System (ADS)

Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

2010-02-01

An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

Multifunctional medicated lyophilised wafer dressing for effective chronic wound healing.

PubMed

Pawar, Harshavardhan V; Boateng, Joshua S; Ayensu, Isaac; Tetteh, John

2014-06-01

Wafers combining weight ratios of Polyox with carrageenan (75/25) or sodium alginate (50/50) containing streptomycin and diclofenac were prepared to improve chronic wound healing. Gels were freeze-dried using a lyophilisation cycle incorporating an annealing step. Wafers were characterised for morphology, mechanical and in vitro functional (swelling, adhesion, drug release in the presence of simulated wound fluid) characteristics. Both blank (BLK) and drug-loaded (DL) wafers were soft, flexible, elegant in appearance and non-brittle in nature. Annealing helped to improve porous nature of wafers but was affected by the addition of drugs. Mechanical characterisation demonstrated that the wafers were strong enough to withstand normal stresses but also flexible to prevent damage to newly formed skin tissue. Differences in swelling, adhesion and drug release characteristics could be attributed to differences in pore size and sodium sulphate formed because of the salt forms of the two drugs. BLK wafers showed relatively higher swelling and adhesion than DL wafers with the latter showing controlled release of streptomycin and diclofenac. The optimised dressing has the potential to reduce bacterial infection and can also help to reduce swelling and pain associated with injury due to the anti-inflammatory action of diclofenac and help to achieve more rapid wound healing. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

Novel wafer stepper with violet LED light source

NASA Astrophysics Data System (ADS)

Ting, Yung-Chiang; Shy, Shyi-Long

2014-03-01

Novel wafer stepper by using contact or proximity printing will be developed, using violet LED light source to replace Hg Arc. lamp or laser. Mirror, filter and condenser lens for Hg Arc. Lamp or laser and reduction lens for projection printing can be discarded. Reliability and manufacturing cost of wafer stepper can be improved. Exposure result by using IP3600 resist and wafer stepper with violet LED light source (wave-length 360nm to 410 nm) will be obtained. This novel wafer stepper can be used for 3DIC, MEMS and bio-chip lithography application by using thin and thick resist with sub-micron to 100 micron thickness.

Method for wafer edge profile extraction using optical images obtained in edge defect inspection process

NASA Astrophysics Data System (ADS)

Okamoto, Hiroaki; Sakaguchi, Naoshi; Hayano, Fuminori

2010-03-01

It is becoming increasingly important to monitor wafer edge profiles in the immersion lithography era. A Nikon edge defect inspection tool acquires the circumferential optical images of the wafer edge during its inspection process. Nikon's unique illumination system and optics make it possible to then convert the brightness data of the captured images to quantifiable edge profile information. During this process the wafer's outer shape is also calculated. Test results show that even newly shipped bare wafers may not have a constant shape over 360 degree. In some cases repeated deformations with 90 degree pitch are observed.

Performance and stress analysis of metal oxide films for CMOS-integrated gas sensors.

PubMed

Filipovic, Lado; Selberherr, Siegfried

2015-03-25

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250°C and 550°C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed.

The Belle II Silicon Vertex Detector

NASA Astrophysics Data System (ADS)

Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.; Kah, D. H.; Kang, K. H.; Kato, E.; Kiesling, C.; Kodys, P.; Kohriki, T.; Koike, S.; Kvasnicka, P.; Marinas, C.; Mayekar, S. N.; Mibe, T.; Mohanty, G. B.; Moll, A.; Negishi, K.; Nakayama, H.; Natkaniec, Z.; Niebuhr, C.; Onuki, Y.; Ostrowicz, W.; Park, H.; Rao, K. K.; Ritter, M.; Rozanska, M.; Saito, T.; Sakai, K.; Sato, N.; Schmid, S.; Schnell, M.; Shimizu, N.; Steininger, H.; Tanaka, S.; Tanida, K.; Taylor, G.; Tsuboyama, T.; Ueno, K.; Uozumi, S.; Ushiroda, Y.; Valentan, M.; Yamamoto, H.

2013-12-01

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×1035 cm-2 s-1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13 m2 and 223,744 channels-twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

PubMed Central

Filipovic, Lado; Selberherr, Siegfried

2015-01-01

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250 °C and 550 °C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed. PMID:25815445

Interaction of bombesin and its fragments with gold nanoparticles analyzed using surface-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Tąta, Agnieszka; Szkudlarek, Aleksandra; Kim, Younkyoo; Proniewicz, Edyta

2017-02-01

This work demonstrates the application of commercially available stable surface composed of gold nanograins with diameters ranging from 70 to 226 nm deposited onto silicon wafer for surface-enhanced Raman scattering investigations of biologically active compounds, such as bombesin (BN) and its fragments. BN is an important neurotransmitter involved in a complex signaling pathways and biological responses; for instance, hypertensive action, contractive on uterus, colon or ileum, locomotor activity, stimulation of gastric and insulin secretion as well as growth promotion of various tumor cell lines, including: lung, prostate, stomach, colon, and breast. It has also been shown that 8-14 BN C-terminal fragment partially retains the biological activity of BN. The SERS results for BN and its fragment demonstrated that (1) three amino acids from these peptides sequence; i.e., L-histidine, L-methionine, and L-tryptophan, are involved in the interaction with gold coated silicon wafer and (2) the strength of these interactions depends upon the aforementioned amino acids position in the peptide sequence.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, S.; Yan, F.; Dorn, D.

2012-06-01

Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect bandmore » images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.« less

In vitro and in vivo evaluation of a sublingual fentanyl wafer formulation

PubMed Central

Lim, Stephen CB; Paech, Michael J; Sunderland, Bruce; Liu, Yandi

2013-01-01

Background The objective of this study was to prepare a novel fentanyl wafer formulation by a freeze-drying method, and to evaluate its in vitro and in vivo release characteristics, including its bioavailability via the sublingual route. Methods The wafer formulation was prepared by freeze-drying an aqueous dispersion of fentanyl containing sodium carboxymethylcellulose and amylogum as matrix formers. Uniformity of weight, friability, and dissolution testing of the fentanyl wafer was achieved using standard methods, and the residual moisture content was measured. The fentanyl wafer was also examined using scanning electron microscopy and x-ray diffraction. The absolute bioavailability of the fentanyl wafer was evaluated in 11 opioid-naïve adult female patients using a randomized crossover design. Results In vitro release showed that almost 90% of the fentanyl dissolved in one minute. In vivo, the first detectable plasma fentanyl concentration was observed after 3.5 minutes and the peak plasma concentration between 61.5 and 67 minutes. The median absolute bioavailability was 53.0%. Conclusion These results indicate that this wafer has potential as an alternative sublingual fentanyl formulation. PMID:23596347

New optoelectronic methodology for nondestructive evaluation of MEMS at the wafer level

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Ferguson, Curtis F.; Melson, Michael J.

2004-02-01

One of the approaches to fabrication of MEMS involves surface micromachining to define dies on single crystal silicon wafers, dicing of the wafers to separate the dies, and electronic packaging of the individual dies. Dicing and packaging of MEMS accounts for a large fraction of the fabrication costs, therefore, nondestructive evaluation at the wafer level, before dicing, can have significant implications on improving production yield and costs. In this paper, advances in development of optoelectronic holography (OEH) techniques for nondestructive, noninvasive, full-field of view evaluation of MEMS at the wafer level are described. With OEH techniques, quantitative measurements of shape and deformation of MEMS, as related to their performance and integrity, are obtained with sub-micrometer spatial resolution and nanometer measuring accuracy. To inspect an entire wafer with OEH methodologies, measurements of overlapping regions of interest (ROI) on a wafer are recorded and adjacent ROIs are stitched together through efficient 3D correlation analysis algorithms. Capabilities of the OEH techniques are illustrated with representative applications, including determination of optimal inspection conditions to minimize inspection time while achieving sufficient levels of accuracy and resolution.

I-line stepper based overlay evaluation method for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2018-03-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules additionally require to process the backside of the wafer; thus require an accurate alignment between the front and backside of the wafer. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 µm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8-9]. In this work, the non-contact infrared alignment system of the Nikon® i-line Stepper NSR-SF150 for both alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the offsets between all different FIA's into account, after correcting the wafer rotation induced FIA position errors, hence an overlay for the stacked wafers can be determined. The developed approach has been validated by a standard front side resist in resist experiment. After the successful validation of the developed technique, special wafer stacks with FIA alignment marks in the bonding interface are fabricated and exposed. Following overlay calculation shows an overlay of less than 200 nm, which enables very accurate process condition for highly scaled TSV integration and advanced substrate integration into IHP's 0.25/0.13 µm SiGe:C BiCMOS technology. The developed technique also allows using significantly smaller alignment marks (i.e. standard FIA alignment marks). Furthermore, the presented method is used, in case of wafer bow related overlay tool problems, for the overlay evaluation of the last two metal layers from production wafers prepared in IHP's standard 0.25/0.13 µm SiGe:C BiCMOS technology. In conclusion, the exposure and measurement job can be done with the same tool, minimizing the back to front side/interface top layer misalignment which leads to a significant device performance improvement of backside/TSV integrated components and technologies.

Ileostomy - changing your pouch

MedlinePlus

... it right away. If you have a pouch system made of 2 pieces (a pouch and a wafer) you ... pouch and barrier or wafer (wafers are part of a 2-piece pouch system). Use a stoma guide with different sizes and ...

From magic to technology: materials integration by wafer bonding

NASA Astrophysics Data System (ADS)

Dragoi, Viorel

2006-02-01

Wafer bonding became in the last decade a very powerful technology for MEMS/MOEMS manufacturing. Being able to offer a solution to overcome some problems of the standard processes used for materials integration (e.g. epitaxy, thin films deposition), wafer bonding is nowadays considered an important item in the MEMS engineer toolbox. Different principles governing the wafer bonding processes will be reviewed in this paper. Various types of applications will be presented as examples.

Noncontacting acoustics-based temperature measurement techniques in rapid thermal processing

NASA Astrophysics Data System (ADS)

Lee, Yong J.; Chou, Ching-Hua; Khuri-Yakub, Butrus T.; Saraswat, Krishna C.

1991-04-01

Temperature measurement of silicon wafers based on the temperature dependence of acoustic waves is studied. The change in the temperature-dependent dispersion relations of the plate modes through the wafer can be exploited to provide a viable temperature monitoring scheme with advantages over both thermocouples and pyrometers. Velocity measurements of acoustic waves through a thin layer of ambient directly above the wafer provides the temperature of the wafer-ambient interface. 1.

Model-based correction for local stress-induced overlay errors

NASA Astrophysics Data System (ADS)

Stobert, Ian; Krishnamurthy, Subramanian; Shi, Hongbo; Stiffler, Scott

2018-03-01

Manufacturing embedded DRAM deep trench capacitors can involve etching very deep holes into silicon wafers1. Due to various design constraints, these holes may not be uniformly distributed across the wafer surface. Some wafer processing steps for these trenches results in stress effects which can distort the silicon wafer in a manner that creates localized alignment issues between the trenches and the structures built above them on the wafer. In this paper, we describe a method to model these localized silicon distortions for complex layouts involving billions of deep trench structures. We describe wafer metrology techniques and data which have been used to verify the stress distortion model accuracy. We also provide a description of how this kind of model can be used to manipulate the polygons in the mask tape out flow to compensate for predicted localized misalignments between design shapes from a deep trench mask and subsequent masks.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, D.C.; Fox, R.J.

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

Noncontact Measurement of Doping Profile for Bare Silicon

NASA Astrophysics Data System (ADS)

Kohno, Motohiro; Matsubara, Hideaki; Okada, Hiroshi; Hirae, Sadao; Sakai, Takamasa

1998-10-01

In this study, we evaluate the doping concentrations of bare silicon wafers by noncontact capacitance voltage (C V) measurements. The metal-air-insulator-semiconductor (MAIS) method enables the measurement of C V characteristics of silicon wafers without oxidation and electrode preparation. This method has the advantage that a doping profile close to the wafer surface can be obtained. In our experiment, epitaxial silicon wafers were used to compare the MAIS method with the conventional MIS method. The experimental results obtained from the two methods showed good agreement. Then, doping profiles of boron-doped Czochralski (CZ) wafers were measured by the MAIS method. The result indicated a significant reduction of the doping concentration near the wafer surface. This observation is attributed to the well-known deactivation of boron with atomic hydrogen which permeated the silicon bulk during the polishing process. This deactivation was recovered by annealing in air at 180°C for 120 min.

The reverse laser drilling of transparent materials

NASA Technical Reports Server (NTRS)

Anthony, T. R.; Lindner, P. A.

1980-01-01

Within a limited range of incident laser-beam intensities, laser drilling of a sapphire wafer initiates on the surface of the wafer where the laser beam exits and proceeds upstream in the laser beam to the surface where the laser beam enters the wafer. This reverse laser drilling is the result of the constructive interference between the laser beam and its reflected component on the exit face of the wafer. Constructive interference occurs only at the exit face of the sapphire wafer because the internally reflected laser beam suffers no phase change there. A model describing reverse laser drilling predicts the ranges of incident laser-beam intensity where no drilling, reverse laser drilling, and forward laser drilling can be expected in various materials. The application of reverse laser drilling in fabricating feed-through conductors in silicon-on-sapphire wafers for a massively parallel processer is described.

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Non-contact defect diagnostics in Cz-Si wafers using resonance ultrasonic vibrations

NASA Astrophysics Data System (ADS)

Belyaev, A.; Kochelap, V. A.; Tarasov, I.; Ostapenko, S.

2001-01-01

A new resonance effect of generation of sub-harmonic acoustic vibrations was applied to characterize defects in as-grown and processed Cz-Si wafers. Ultrasonic vibrations were generated into standard 8″ wafers using an external ultrasonic transducer and their amplitude recorded in a non-contact mode using a scanning acoustic probe. By tuning the frequency, f, of the transducer we observed generation of intense sub-harmonic acoustic mode ("whistle" or w-mode) with f/2 frequency. The characteristics of the w-mode-amplitude dependence, frequency scans, spatial distribution allow a clear distinction versus harmonic vibrations of the same wafer. The origin of sub-harmonic vibrations observed on 8″ Cz-Si wafers is attributed to a parametric resonance of flexural vibrations in thin silicon circular plates. We present evidence that "whistle" effect shows a strong dependence on the wafer's growth and processing history and can be used for quality assurance purposes.

A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

PubMed

Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

2012-07-01

We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

Cadmium telluride photovoltaic radiation detector

DOEpatents

Agouridis, Dimitrios C.; Fox, Richard J.

1981-01-01

A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.