The Formation of Galactic Bulges

NASA Astrophysics Data System (ADS)

Carollo, C. Marcella; Ferguson, Henry C.; Wyse, Rosemary F. G.

2000-03-01

Part I. Introduction: What are galactic bulges?; Part II. The Epoch of Bulge Formation: Origin of bulges; Deep sub-mm surveys: High-z ULIRGs and the formation of spheroids; Ages and metallicities for stars in the galactic bulge; Integrated stellar populations of bulges: First results; HST-NICMOS observations of galactic bulges: Ages and dust; Inside-out bulge formation and the origin of the Hubble sequence; Part III. The Timescales of Bulge Formation: Constraints on the bulge formation timescale from stellar populations; Bulge building with mergers and winds; Role of winds, starbursts, and activity in bulge formation; Dynamical timescales of bulge formation; Part IV. Physical Processes in Bulge Formation: the role of bars for secular bulge formation; Bars and boxy/peanut-shaped bulges: an observational point of view; Boxy- and peanut-shaped bulges; A new class of bulges; The role of secondary bars in bulge formation; Radial transport of molecular gas to the nuclei of spiral galaxies; Dynamical evolution of bulge shapes; Two-component stellar systems: Phase-space constraints; Central NGC 2146 - a firehose-type bending instability?; Bulge formation: the role of the multi-phase ISM; Global evolution of a self-gravitating multi-phase ISM in the central kpc region of galaxies; Part V. Bulge Phenomenology: Bulge-disk decomposition of spiral galaxies in the near-infrared; The triaxial bulge of NGC 1371; The bulge-disk orthogonal decoupling in galaxies: NGC 4698 and NGC 4672; The kinematics and the origin of the ionized gas in NGC 4036; Optically thin thermal plasma in the galactic bulge; X-ray properties of bulges; The host galaxies of radio-loud AGN; The centers of radio-loud early-type galaxies with HST; Central UV spikes in two galactic spheroids; Conference summary: where do we stand?

Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

PubMed Central

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

2014-01-01

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

Effects of De-spinning and Lithosphere Thickening on the Lunar Fossil Bulge

NASA Astrophysics Data System (ADS)

Zhong, S.; Qin, C.; Phillips, R. J.

2016-12-01

The Moon has abnormally large degree-2 anomalies in gravity and shape (or bulge). The degree-2 gravity coefficients C20 and C22 are, respectively, 22 and 7 times greater than expected from the Moon's current orbital and rotational states. One prevalent hypothesis, called the fossil bulge hypothesis, interprets the current degree-2 shape as a remnant of the bulge that froze in when the Moon was closer to the Earth with stronger tidal and rotational potentials. However, the dynamic feasibility of the freeze-in process has never been quantitatively examined. In this study, we explore, using numerical models of viscoelastic deformation with time-dependent rotational potential and lithospheric rheology, how the degree-2 bulge would evolve with time as the early Moon cools and migrates away from the Earth. Our model includes two competing effects: 1) a thickening lithosphere with time through cooling, which helps maintain the bulge, and 2) de-spinning through tidal locking, which tends to reduce the bulge. In our model, a strong lithosphere is represented by the topmost layer that is orders of magnitude more viscous than the mantle. The benchmark results show that our numerical model can compute the bulge size accurately. Our calculations start with a bulge size that is in hydrostatic equilibrium with the initial rotational rate. The bulge reduces with time as the Moon spins down, while the lithosphere can support certain amount of bulge as it thickens. We find that the final size of the bulge is controlled by the relative time scales of the two processes. At limiting cases, if the time scale of de-spinning were much larger than that of lithosphere thickening, the bulge size would be largely maintained. Conversely, the bulge size would be reduced significantly. We will consider more realistic time scales for these two processes, as well as effects of other subsequent processes after lunar magma ocean crystallization, such as large impacts and mare volcanism.

Jupiter's hydrogen bulge: A Cassini perspective

NASA Astrophysics Data System (ADS)

Melin, Henrik; Stallard, T. S.

2016-11-01

We present observations of H Ly-α and H2 emissions on the body of Jupiter obtained during the Cassini flyby in late 2000 and early 2001. The H Ly-α emission is highly organised by System III longitude and latitude, peaking at a brightness of 22 kR between 90 and 120° longitude. This is known as the H Ly-α 'bulge'. These observations add to a number of previous studies, showing that the feature is very long-lived, present over several decades. We show that there is a strong correlation between the prevailing solar H Ly-α flux (measured at Earth) and the peak brightness of the H Ly-α bulge at Jupiter, which supports the notion that it is primarily driven by solar resonance scatter. The H Ly-α brightness distribution is not aligned with the jovigraphic equator, but is approximately aligned with the particle drift equator of some, but not all, major Jupiter magnetic field models. On the time scale of days, the bulge region appears twice as variable as the non-bulge region. We propose that the electron recombination of H3+ is an important reaction for the generation of the H Ly-α bulge, which requires an enhancement of soft electrons at the location of the bulge. We derive an equatorial H3+ lifetime of 1.6 ± 0.4 h and a corresponding column averaged electron density of 1.7 × 109 m-3.

Laser wafering for silicon solar.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

2011-03-01

Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurfacemore » damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.« less

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

Infrared spectroscopy of wafer-scale graphene.

PubMed

Yan, Hugen; Xia, Fengnian; Zhu, Wenjuan; Freitag, Marcus; Dimitrakopoulos, Christos; Bol, Ageeth A; Tulevski, George; Avouris, Phaedon

2011-12-27

We report spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions) and the wavelength at which Pauli blocking occurs due to band filling. From these, the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37 ± 0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically doped single-layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 μm (40 cm(-1)) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

NASA Astrophysics Data System (ADS)

Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

2017-12-01

Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

KINEMATIC SIGNATURES OF BULGES CORRELATE WITH BULGE MORPHOLOGIES AND SERSIC INDEX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fabricius, Maximilian H.; Saglia, Roberto P.; Bender, Ralf

2012-07-20

We use the Marcario Low Resolution Spectrograph at the Hobby-Eberly Telescope to study the kinematics of pseudobulges and classical bulges in the nearby universe. We present major axis rotational velocities, velocity dispersions, and h{sub 3} and h{sub 4} moments derived from high-resolution ({sigma}{sub inst} Almost-Equal-To 39 km s{sup -1}) spectra for 45 S0 to Sc galaxies; for 27 of the galaxies we also present minor axis data. We combine our kinematics with bulge-to-disk decompositions. We demonstrate for the first time that purely kinematic diagnostics of the bulge dichotomy agree systematically with those based on Sersic index. Low Sersic index bulgesmore » have both increased rotational support (higher v/{sigma} values) and on average lower central velocity dispersions. Furthermore, we confirm that the same correlation also holds when visual morphologies are used to diagnose bulge type. The previously noted trend of photometrically flattened bulges to have shallower velocity dispersion profiles turns out to be significant and systematic if the Sersic index is used to distinguish between pseudobulges and classical bulges. The anti-correlation between h{sub 3} and v/{sigma} observed in elliptical galaxies is also observed in intermediate-type galaxies, irrespective of bulge type. Finally, we present evidence for formerly undetected counter-rotation in the two systems NGC 3945 and NGC 4736.« less

The Heavy Ion Afternoon Bulge: Structure and Formation Mechanisms

NASA Astrophysics Data System (ADS)

Fernandes, P. A.; Larsen, B.; Skoug, R. M.; Reeves, G. D.; Denton, M.; Engel, M.; Ferradas, C.; Funsten, H. O.; Henderson, M. G.; Jahn, J. M.; Morley, S.; Thomsen, M. F.

2017-12-01

Recent observations of near-equatorial inner magnetosphere plasma composition indicate the presence of an "afternoon bulge" plasma population at low L-shell. A detailed statistical survey using HOPE data characterized this afternoon bulge as an enhancement in 10 keV O+ and He+ ions extending from 1100-2200 MLT and 2 ≤ L ≤ 4 during quiet/moderate geomagnetic activity (Kp < 5). This statistical HOPE study postulated that formation of the bulge is caused by variations in Kp: 10 keV particles have access to low L-shells during geomagnetically active times and become trapped during the transition to quiet times. In this study, we expand on previous observations of the afternoon bulge by examining individual transits of this feature by the Van Allen Probes. We analyze periods with optimal spacecraft transits of the afternoon bulge region, including: May - Oct. 2013, Feb. - June 2014, and Apr. - Aug. 2015. We determine the presence and duration of the bulge during case studies representing three categories of geomagnetic activity: 1) extended quiet geomagnetic conditions; 2) sharp transitions of Kp from active to quiet conditions; and 3) rises and falls in Kp on the time scales of spacecraft orbits to days. We thoroughly characterize the energy structure of the bulge as a function of Kp. We also analyze these transits of the bulge in the context of plasma access using both drift path modeling and UBK-derived energy access maps.

Wafer-scale integrated micro-supercapacitors on an ultrathin and highly flexible biomedical platform.

PubMed

Maeng, Jimin; Meng, Chuizhou; Irazoqui, Pedro P

2015-02-01

We present wafer-scale integrated micro-supercapacitors on an ultrathin and highly flexible parylene platform, as progress toward sustainably powering biomedical microsystems suitable for implantable and wearable applications. All-solid-state, low-profile (<30 μm), and high-density (up to ~500 μF/mm(2)) micro-supercapacitors are formed on an ultrathin (~20 μm) freestanding parylene film by a wafer-scale parylene packaging process in combination with a polyaniline (PANI) nanowire growth technique assisted by surface plasma treatment. These micro-supercapacitors are highly flexible and shown to be resilient toward flexural stress. Further, direct integration of micro-supercapacitors into a radio frequency (RF) rectifying circuit is achieved on a single parylene platform, yielding a complete RF energy harvesting microsystem. The system discharging rate is shown to improve by ~17 times in the presence of the integrated micro-supercapacitors. This result suggests that the integrated micro-supercapacitor technology described herein is a promising strategy for sustainably powering biomedical microsystems dedicated to implantable and wearable applications.

Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films.

PubMed

Ionescu, Robert; Campbell, Brennan; Wu, Ryan; Aytan, Ece; Patalano, Andrew; Ruiz, Isaac; Howell, Stephen W; McDonald, Anthony E; Beechem, Thomas E; Mkhoyan, K Andre; Ozkan, Mihrimah; Ozkan, Cengiz S

2017-07-25

It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS 2 ) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applications of spintronics. Here in, a facile and reproducible method of producing wafer scale atomically thin MoS 2 layers has been developed using the incorporation of a chelating agent in a common organic solvent, dimethyl sulfoxide (DMSO). Previously, solution processing of a MoS 2 precursor, ammonium tetrathiomolybdate ((NH 4 ) 2 MoS 4 ), and subsequent thermolysis was used to produce large area MoS 2 layers. Our work here shows that the use of ethylenediaminetetraacetic acid (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demonstrate that the chelating action and dispersing effect of EDTA is critical in growing uniform films. Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and high-resolution scanning transmission electron microscopy (HR-STEM) indicate the formation of homogenous few layer MoS 2 films at the wafer scale, resulting from the novel chelant-in-solution method.

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer.

PubMed

Yu, Yang; Fong, Patrick W K; Wang, Shifeng; Surya, Charles

2016-11-29

High quality wafer-scale free-standing WS 2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS 2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS 2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS 2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS 2 , which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS 2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm 2 at -1 V which shows superior performances compared to the directly grown WS 2 /GaN heterojunctions.

Within-wafer CD variation induced by wafer shape

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2016-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer

Wafer screening device and methods for wafer screening

DOEpatents

Sopori, Bhushan; Rupnowski, Przemyslaw

2014-07-15

Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks--microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers--a stress that mimics the highest stress during cell/module processing. If a wafer survives this stress, it has a high probability of surviving without breakage during cell/module fabrication. Based on this, we have developed a high throughput, noncontact method for applying a predetermined stress to a wafer. The wafers are carried on a belt through a chamber that illuminates the wafer with an intense light of a predetermined intensity distribution that can be varied by changing the power to the light source. As the wafers move under the light source, each wafer undergoes a dynamic temperature profile that produces a preset elastic stress. If this stress exceeds the wafer strength, the wafer will break. The broken wafers are separated early, eliminating cost of processing into cell/module. We will describe details of the system and show comparison of breakage statistics with the breakage on a production line.

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

PubMed Central

Yu, Yang; Fong, Patrick W. K.; Wang, Shifeng; Surya, Charles

2016-01-01

High quality wafer-scale free-standing WS2 grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS2 was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS2 onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS2 and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS2, which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS2 onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm2 at −1 V which shows superior performances compared to the directly grown WS2/GaN heterojunctions. PMID:27897210

Formation of the bulge of Iapetus through long-wavelength folding of the lithosphere

NASA Astrophysics Data System (ADS)

Kay, Jonathan P.; Dombard, Andrew J.

2018-03-01

Previous models that attempted to explain the formation of the pronounced oblate shape of Iapetus suggested that it was a preserved rotational bulge. These models found that heating was provided by short-lived radioactive isotopes that decayed rapidly and allowed the excess flattening of the lithosphere to be locked in by a thickening lithosphere, but placed severe timing constraints on the formation of Iapetus and its bulge. Here, we show that finite element simulations with an elastic-viscous-plastic rheology indicate it is possible to form the bulge through long-wavelength folding of the lithosphere of Iapetus during an epoch of contraction combined with a latitudinal surface temperature gradient. In contrast to models of a frozen rotational bulge, heat generated by long-lived radioactive isotopes warms the interior, which causes porosity loss and forces Iapetus to compact by ∼10%. Our simulations are most successful when there is a 30 K temperature difference between the pole and the equator. Tectonic growth of the bulge is not sensitive to the time scale over which the moon contracts, and lithospheric thickness primarily controls whether a fold can form, not fold wavelength. In addition, long term simulations show that when no stress is applied, the mechanical lithosphere is strong enough to support the bulge, with negligible relaxation over billion year time scales.

11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

DTIC Science & Technology

2012-01-30

drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

Bright compact bulges at intermediate redshifts

NASA Astrophysics Data System (ADS)

Sachdeva, Sonali; Saha, Kanak

2018-07-01

Studying bright (MB < -20), intermediate-redshift (0.4 < z< 1.0), disc-dominated (nB < 2.5) galaxies from Hubble Space Telescope/Advanced Camera for Surveys and Wide Field Camera 3 in Chandra Deep Field-South, in rest-frame B and I band, we found a new class of bulges that is brighter and more compact than ellipticals. We refer to them as `bright, compact bulges' (BCBs) - they resemble neither classical nor pseudo-bulges and constitute ˜12 per cent of the total bulge population at these redshifts. Examining free-bulge + disc decomposition sample and elliptical galaxy sample from Simard et al., we find that only ˜0.2 per cent of the bulges can be classified as BCBs in the local Universe. Bulge to total light ratio of disc galaxies with BCBs is (at ˜0.4) a factor of ˜2 and ˜4 larger than for those with classical and pseudo-bulges. BCBs are ˜2.5 and ˜6 times more massive than classical and pseudo-bulges. Although disc galaxies with BCBs host the most massive and dominant bulge type, their specific star formation rate is 1.5-2 times higher than other disc galaxies. This is contrary to the expectations that a massive compact bulge would lead to lower star formation rates. We speculate that our BCB host disc galaxies are descendant of massive, compact, and passive elliptical galaxies observed at higher redshifts. Those high-redshift ellipticals lack local counterparts and possibly evolved by acquiring a compact disc around them. The overall properties of BCBs support a picture of galaxy assembly in which younger discs are being accreted around massive pre-existing spheroids.

Wafer-scale fabrication of glass-FEP-glass microfluidic devices for lipid bilayer experiments.

PubMed

Bomer, Johan G; Prokofyev, Alexander V; van den Berg, Albert; Le Gac, Séverine

2014-12-07

We report a wafer-scale fabrication process for the production of glass-FEP-glass microdevices using UV-curable adhesive (NOA81) as gluing material, which is applied using a novel "spin & roll" approach. Devices are characterized for the uniformity of the gluing layer, presence of glue in the microchannels, and alignment precision. Experiments on lipid bilayers with electrophysiological recordings using a model pore-forming polypeptide are demonstrated.

Velocity Dispersions Across Bulge Types

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fabricius, Maximilian; Bender, Ralf; Hopp, Ulrich

2010-06-08

We present first results from a long-slit spectroscopic survey of bulge kinematics in local spiral galaxies. Our optical spectra were obtained at the Hobby-Eberly Telescope with the LRS spectrograph and have a velocity resolution of 45 km/s (sigma*), which allows us to resolve the velocity dispersions in the bulge regions of most objects in our sample. We find that the velocity dispersion profiles in morphological classical bulge galaxies are always centrally peaked while the velocity dispersion of morphologically disk-like bulges stays relatively flat towards the center--once strongly barred galaxies are discarded.

A study of the effect of bulges on bar formation in disc galaxies

NASA Astrophysics Data System (ADS)

Kataria, Sandeep Kumar; Das, Mousumi

2018-04-01

We use N-body simulations of bar formation in isolated galaxies to study the effect of bulge mass and bulge concentration on bar formation. Bars are global disc instabilities that evolve by transferring angular momentum from the inner to outer discs and to the dark matter halo. It is well known that a massive spherical component such as halo in a disc galaxy can make it bar stable. In this study, we explore the effect of another spherical component, the bulge, on bar formation in disc galaxies. In our models, we vary both the bulge mass and concentration. We have used two sets of models: one that has a dense bulge and high surface density disc, and the other model has a less concentrated bulge and a lighter disc. In both models, we vary the bulge to disc mass fraction from 0 to 0.7. Simulations of both the models show that there is an upper cut-off in bulge-to-disc mass ratio Mb/Md above which bars cannot form; the cut-off is smaller for denser bulges (Mb/Md = 0.2) compared to less denser ones (Mb/Md = 0.5). We define a new criterion for bar formation in terms of the ratio of bulge to total radial force (Fb/Ftot) at the disc scale lengths above which bars cannot form. We find that if Fb/Ftot > 0.35, a disc is stable and a bar cannot form. Our results indicate that early-type disc galaxies can still form strong bars in spite of having massive bulges.

Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

NASA Astrophysics Data System (ADS)

Lee, Ho Ki; Baek, Kye Hyun; Shin, Kyoungsub

2017-06-01

As semiconductor devices are scaled down to sub-20 nm, process window of plasma etching gets extremely small so that process drift or shift becomes more significant. This study addresses one of typical process drift issues caused by consumable parts erosion over time and provides feasible solution by using virtual metrology (VM) based wafer-to-wafer control. Since erosion of a shower head has center-to-edge area dependency, critical dimensions (CDs) at the wafer center and edge area get reversed over time. That CD trend is successfully estimated on a wafer-to-wafer basis by a partial least square (PLS) model which combines variables from optical emission spectroscopy (OES), VI-probe and equipment state gauges. R 2 of the PLS model reaches 0.89 and its prediction performance is confirmed in a mass production line. As a result, the model can be exploited as a VM for wafer-to-wafer control. With the VM, advanced process control (APC) strategy is implemented to solve the CD drift. Three σ of CD across wafer is improved from the range (1.3-2.9 nm) to the range (0.79-1.7 nm). Hopefully, results introduced in this paper will contribute to accelerating implementation of VM based APC strategy in semiconductor industry.

The Imaging Properties of a Silicon Wafer X-Ray Telescope

NASA Technical Reports Server (NTRS)

Joy, M. K.; Kolodziejczak, J. J.; Weisskopf, M. C.; Fair, S.; Ramsey, B. D.

1994-01-01

Silicon wafers have excellent optical properties --- low microroughness and good medium-scale flatness --- which Make them suitable candidates for inexpensive flat-plate grazing-incidence x-ray mirrors. On short spatial scales (less than 3 mm) the surface quality of silicon wafers rivals that expected of the Advanced X-Ray Astrophysics Facility (AXAF) high-resolution optics. On larger spatial scales, however, performance may be degraded by the departure from flatness of the wafer and by distortions induced by the mounting scheme. In order to investigate such effects, we designed and constructed a prototype silicon-wafer x-ray telescope. The device was then tested in both visible light and x rays. The telescope module consists of 94 150-mm-diameter wafers, densely packed into the first stage of a Kirkpatrick-Baez configuration. X-ray tests at three energies (4.5, 6.4, and 8.0 keV) showed an energy-independent line spread function with full width at half maximum (FWHM) of 150 arcseconds, dominated by deviations from large-scale flatness.

Microsecond-Scale MD Simulations of HIV-1 DIS Kissing-Loop Complexes Predict Bulged-In Conformation of the Bulged Bases and Reveal Interesting Differences between Available Variants of the AMBER RNA Force Fields.

PubMed

Havrila, Marek; Zgarbová, Marie; Jurečka, Petr; Banáš, Pavel; Krepl, Miroslav; Otyepka, Michal; Šponer, Jiří

2015-12-10

We report an extensive set of explicit solvent molecular dynamics (MD) simulations (∼25 μs of accumulated simulation time) of the RNA kissing-loop complex of the HIV-1 virus initiation dimerization site. Despite many structural investigations by X-ray, NMR, and MD techniques, the position of the bulged purines of the kissing complex has not been unambiguously resolved. The X-ray structures consistently show bulged-out positions of the unpaired bases, while several NMR studies show bulged-in conformations. The NMR studies are, however, mutually inconsistent regarding the exact orientations of the bases. The earlier simulation studies predicted the bulged-out conformation; however, this finding could have been biased by the short simulation time scales. Our microsecond-long simulations reveal that all unpaired bases of the kissing-loop complex stay preferably in the interior of the kissing-loop complex. The MD results are discussed in the context of the available experimental data and we suggest that both conformations are biochemically relevant. We also show that MD provides a quite satisfactory description of this RNA system, contrasting recent reports of unsatisfactory performance of the RNA force fields for smaller systems such as tetranucleotides and tetraloops. We explain this by the fact that the kissing complex is primarily stabilized by an extensive network of Watson-Crick interactions which are rather well described by the force fields. We tested several different sets of water/ion parameters but they all lead to consistent results. However, we demonstrate that a recently suggested modification of van der Waals interactions of the Cornell et al. force field deteriorates the description of the kissing complex by the loss of key stacking interactions stabilizing the interhelical junction and excessive hydrogen-bonding interactions.

Wafer-scale aluminum nano-plasmonics

NASA Astrophysics Data System (ADS)

George, Matthew C.; Nielson, Stew; Petrova, Rumyana; Frasier, James; Gardner, Eric

2014-09-01

The design, characterization, and optical modeling of aluminum nano-hole arrays are discussed for potential applications in surface plasmon resonance (SPR) sensing, surface-enhanced Raman scattering (SERS), and surface-enhanced fluorescence spectroscopy (SEFS). In addition, recently-commercialized work on narrow-band, cloaked wire grid polarizers composed of nano-stacked metal and dielectric layers patterned over 200 mm diameter wafers for projection display applications is reviewed. The stacked sub-wavelength nanowire grid results in a narrow-band reduction in reflectance by 1-2 orders of magnitude, which can be tuned throughout the visible spectrum for stray light control.

The continuous rise of bulges out of galactic disks

NASA Astrophysics Data System (ADS)

Breda, Iris; Papaderos, Polychronis

2018-06-01

over 3 dex in ℳ⋆ and more than 1 dex in Σ⋆ a tight continuous sequence of increasing ⟨δμ9G⟩ with increasing ℳ⋆, Σ⋆, ℳ and ℳ. Along this continuum of physical and evolutionary properties, our sample spans a range of 4 mag in ⟨δμ9G⟩: high-⟨δμ9G⟩ bulges are the oldest, densest and most massive ones (ℳ 11.7 Gyr, Σ⋆ > 109 M⊙ kpc-2, ℳ⋆ ≥ 1010 M⊙), whereas the opposite is the case for low-⟨δμ9G⟩ bulges (ℳ 7 Gyr) that generally reside in low-mass LTGs. Furthermore, we find that the bulge-to-disk age and metallicity contrast, as well as the bulge-to-disk mass ratio, show a positive trend with ℳ⋆,T, raising from, respectively, 0 Gyr, 0 dex and 0.25 to 3 Gyr, 0.3 dex and 0.67 across the mass range covered by our sample. Whereas gas excitation in lower-mass (≲ 109.7 M⊙) bulges is invariably dominated by star formation (SF), LINER- and Seyfert-specific emission-line ratios were exclusively documented in high-mass (≳ 1010 M⊙), high-Σ⋆ (≳ 109 M⊙ kpc-2) bulges. This is in agreement with previous work and consistent with the notion that the Eddington ratio or the black hole-to-bulge mass ratio scale with ℳ⋆. The coexistence of Seyfert and SF activity in 20% of higher-ℳ⋆, high-Σ⋆ bulges being spectroscopically classified as Composites suggests that the onset of AGN-driven feedback does not necessarily lead to an abrupt termination of SF in LTG nuclei. Conclusions: The continuity both in the properties of LTG bulges themselves and in their age and metallicity contrast to their parent diskssuggests that these components evolve alongside in a concurrent process that leads to a continuum of physical and evolutionary characteristics. Our results are consistent with a picture where bulge growth in LTGs is driven by a superposition of quick-early and slow-secular processes, the relative importance of which increases with ℳ⋆,T. These processes, which presumably combine in situ SF

Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers

NASA Astrophysics Data System (ADS)

Cunning, Benjamin V.; Ahmed, Mohsin; Mishra, Neeraj; Ranjbar Kermany, Atieh; Wood, Barry; Iacopi, Francesca

2014-08-01

Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

Bright Compact Bulges (BCBs) at intermediate redshifts

NASA Astrophysics Data System (ADS)

Sachdeva, Sonali; Saha, Kanak

2018-04-01

Studying bright (MB < -20), intermediate-redshift (0.4 < z < 1.0), disc dominated (nB < 2.5) galaxies from HST/ACS and WFC3 in Chandra Deep Field South, in rest-frame B and I-band, we found a new class of bulges which is brighter and more compact than ellipticals. We refer to them as "Bright, Compact Bulges" (BCBs) - they resemble neither classical nor pseudo-bulges and constitute ˜12% of the total bulge population at these redshifts. Examining free-bulge + disc decomposition sample and elliptical galaxy sample from Simard et al. (2011), we find that only ˜0.2% of the bulges can be classified as BCBs in the local Universe. Bulge to total ratio (B/T) of disc galaxies with BCBs is (at ˜0.4) a factor of ˜2 and ˜4 larger than for those with classical and pseudo bulges. BCBs are ˜2.5 and ˜6 times more massive than classical and pseudo bulges. Although disc galaxies with BCBs host the most massive and dominant bulge type, their specific star formation rate is 1.5-2 times higher than other disc galaxies. This is contrary to the expectations that a massive compact bulge would lead to lower star formation rates. We speculate that our BCB host disc galaxies are descendant of massive, compact and passive elliptical galaxies observed at higher redshifts. Those high redshift ellipticals lack local counterparts and possibly evolved by acquiring a compact disc around them. The overall properties of BCBs supports a picture of galaxy assembly in which younger discs are being accreted around massive pre-existing spheroids.

Thinning of PLZT ceramic wafers for sensor integration

NASA Astrophysics Data System (ADS)

Jin, Na; Liu, Weiguo

2010-08-01

Characteristics of transparent PLZT ceramics can be tailored by controlling the component of them, and therefore showed excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. To integrate the ceramics with microelectronic circuit to realize integrated applications, the ceramic wafers have to be thinned down to micrometer scale in thickness. A7/65/35 PLZT ceramic wafer was selected in this study for the thinning process. Size of the wafer was 10×10mm with an initial thickness of 300μm. A novel membrane transfer process (MTP) was developed for the thinning and integration of the ceramic wafers. In the MTP process, the ceramic wafer was bonded to silicon wafer using a polymer bonding method. Mechanical grinding method was applied to reduce the thickness of the ceramic. To minimize the surface damage in the ceramic wafer caused by the mechanical grinding, magnetorheological finishing (MRF) method was utilized to polish the wafer. White light interference (WLI) apparatus was used to monitor the surface qualities of the grinded and ploished ceramic wafers. For the PLZT membrane obtained from the MTP process, the final thickness of the thinned and polished wafer was 10μm, the surface roughness was below 1nm in rms, and the flatness was better than λ/5.

THE MOLECULAR GAS DENSITY IN GALAXY CENTERS AND HOW IT CONNECTS TO BULGES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fisher, David B.; Bolatto, Alberto; Drory, Niv

2013-02-20

In this paper we present gas density, star formation rate (SFR), stellar masses, and bulge-disk decompositions for a sample of 60 galaxies. Our sample is the combined sample of the BIMA SONG, CARMA STING, and PdBI NUGA surveys. We study the effect of using CO-to-H{sub 2} conversion factors that depend on the CO surface brightness, and also that of correcting SFRs for diffuse emission from old stellar populations. We estimate that SFRs in bulges are typically lower by 20% when correcting for diffuse emission. Using the surface brightness dependent conversion factor, we find that over half of the galaxies inmore » our sample have {Sigma}{sub mol} > 100 M {sub Sun} pc{sup -2}. Though our sample is not complete in any sense, our results are enough to rule out the assumption that bulges are uniformly gas-poor systems. We find a trend between gas density of bulges and bulge Sersic index; bulges with lower Sersic index have higher gas density. Those bulges with low Sersic index (pseudobulges) have gas fractions that are similar to that of disks. Conversely, the typical molecular gas fraction in classical bulges is more similar to that of an elliptical galaxy. We also find that there is a strong correlation between bulges with the highest gas surface density and the galaxy being barred. However, we also find that classical bulges with low gas surface density can be barred as well. Our results suggest that understanding the connection between the central surface density of gas in disk galaxies and the presence of bars should also take into account the total gas content of the galaxy. Finally, we show that when using the corrected SFRs and gas densities, the correlation between SFR surface density and gas surface density of bulges is similar to that of disks. This implies that at the scale of the bulges the timescale for converting gas into stars is comparable to those results found in disks.« less

EXPLORING THE UNUSUALLY HIGH BLACK-HOLE-TO-BULGE MASS RATIOS IN NGC 4342 AND NGC 4291: THE ASYNCHRONOUS GROWTH OF BULGES AND BLACK HOLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogdan, Akos; Forman, William R.; Kraft, Ralph P.

2012-07-10

We study two nearby early-type galaxies, NGC 4342 and NGC 4291, that host unusually massive black holes relative to their low stellar mass. The observed black-hole-to-bulge mass ratios of NGC 4342 and NGC 4291 are 6.9{sup +3.8}{sub -2.3}% and 1.9% {+-} 0.6%, respectively, which significantly exceed the typical observed ratio of {approx}0.2%. As a consequence of the exceedingly large black-hole-to-bulge mass ratios, NGC 4342 and NGC 4291 are Almost-Equal-To 5.1{sigma} and Almost-Equal-To 3.4{sigma} outliers from the M{sub .}-M{sub bulge} scaling relation, respectively. In this paper, we explore the origin of the unusually high black-hole-to-bulge mass ratio. Based on Chandra X-raymore » observations of the hot gas content of NGC 4342 and NGC 4291, we compute gravitating mass profiles, and conclude that both galaxies reside in massive dark matter halos, which extend well beyond the stellar light. The presence of dark matter halos around NGC 4342 and NGC 4291 and a deep optical image of the environment of NGC 4342 indicate that tidal stripping, in which {approx}> 90% of the stellar mass was lost, cannot explain the observed high black-hole-to-bulge mass ratios. Therefore, we conclude that these galaxies formed with low stellar masses, implying that the bulge and black hole did not grow in tandem. We also find that the black hole mass correlates well with the properties of the dark matter halo, suggesting that dark matter halos may play a major role in regulating the growth of the supermassive black holes.« less

The Chemical Composition of the Galactic Bulge and Implications for its Evolution

NASA Astrophysics Data System (ADS)

McWilliam, Andrew

2016-08-01

At a bulge latitude of b = -4°, the average [Fe/H] and [Mg/H] values are +0.06 and +0.17 dex, roughly 0.2 and 0.7 dex higher than the local thin and thick disk values, respectively, suggesting a large bulge effective yield, perhaps due to efficient retention of supernova ejecta. The bulge vertical [Fe/H] gradient, at ∼0.5 dex/kpc, appears to be due to a changing mixture of sub-populations (near +0.3 dex and -0.3 dex and one possibly near -0.7 dex) with latitude. At solar [Fe/H], the bulge [Al/Fe] and [α/Fe] ratios are ∼ +0.15 dex. Below [Fe/H] ∼ -0.5 dex, the bulge and local thick disk compositions are very similar; but the measured [Mg/Fe], [/Fe], [La/Eu] and dramatic [Cu/Fe] ratios suggest higher SFR in the bulge. However, these composition differences with the thick disk could be due to measurement errors and non-LTE effects. Unusual zig-zag trends of [Cu/Fe] and [Na/Fe] suggest metallicity-dependent nucleosynthesis by core-collapse supernovae in the Type Ia supernova time-delay scenario. The bulge sub-population compositions resemble the local thin and thick disks, but at higher [Fe/H], suggesting a radial [Fe/H] gradient of -0.04 to -0.05 dex/kpc for both the thin and thick disks. If the bulge formed through accretion of inner thin and thick disk stars, it appears that these stars retained vertical scale heights characteristic of their kinematic origin, resulting in the vertical [Fe/H] gradient and [α/Fe] trends seen today.

Mapping a stellar disk into a boxy bulge: The outside-in part of the Milky Way bulge formation

NASA Astrophysics Data System (ADS)

Di Matteo, P.; Haywood, M.; Gómez, A.; van Damme, L.; Combes, F.; Hallé, A.; Semelin, B.; Lehnert, M. D.; Katz, D.

2014-07-01

By means of idealized, dissipationless N-body simulations that follow the formation and subsequent buckling of a stellar bar, we study the characteristics of boxy/peanut-shaped bulges and compare them with the properties of the stellar populations in the Milky Way (MW) bulge. The main results of our modeling, valid for the general family of boxy/peanut shaped bulges, are the following: (i) Because of the spatial redistribution in the disk initiated at the epoch of bar formation, stars from the innermost regions to the outer Lindblad resonance (OLR) of the stellar bar are mapped into a boxy bulge. (ii) The contribution of stars to the local bulge density depends on their birth radius: stars born in the innermost disk tend to dominate the innermost regions of the boxy bulge, while stars originating closer to the OLR are preferably found in the outer regions of the boxy/peanut structure. (iii) Stellar birth radii are imprinted in the bulge kinematics: the larger the birth radii of stars ending up in the bulge, the greater their rotational support and the higher their line-of-sight velocity dispersions (but note that this last trend depends on the bar viewing angle). (iv) The higher the classical bulge-over-disk ratio, the larger its fractional contribution of stars at large vertical distance from the galaxy midplane. Comparing these results with the properties of the stellar populations of the MW bulge recently revealed by the ARGOS survey, we conclude that (I) the two most metal-rich populations of the MW bulge, labeled A and B in the ARGOS survey, originate in the disk, with the population of A having formed on average closer to the Galaxy center than the population of component B; (II) a massive (B/D ~ 0.25) classical spheroid can be excluded for the MW, thus confirming previous findings that the MW bulge is composed of populations that mostly have a disk origin. On the basis of their chemical and kinematic characteristics, the results of our modeling suggest that

The Galactic Bulge Radial Velocity/Abundance Assay

NASA Astrophysics Data System (ADS)

Rich, R. M.

2012-08-01

The Bulge Radial Velocity Assay (BRAVA) measured radial velocities for ˜ 9500 late-type giants in the Galactic bulge, predominantly from -10° < l < +10° and -2° < b < -10°. The project has discovered that the bulge exhibits cylindrical rotation characteristic of bars, and two studies of dynamics (Shen et al. 2010; Wang et al. 2012 MNRAS sub.) find that bar models- either N-body formed from an instability in a preexisting disk, or a self-consistent model- can account for the observed kinematics. Studies of the Plaut field at (l,b) = 0°, -8° show that alpha enhancement is found in bulge giants even 1 kpc from the nucleus. New infrared studies extending to within 0.25° = 35 pc of the Galactic Center find no iron or alpha gradient from Baade's Window (l,b) = 0.9°, -3.9° to our innermost field, in contrast to the marked gradient observed in the outer bulge. We consider the case of the remarkable globular cluster Terzan 5, which has a strongly bimodal iron and rm [α/Fe] within its members, and we consider evidence pro and con that the bulge was assembled from dissolved clusters. The Subaru telescope has the potential to contribute to study of the Galactic bulge, especially using the Hyper Superime-Cam and planned spectroscopic modes, as well as the high resolution spectrograph. The planned Jasmine satellite series may deliver a comprehensive survey of distances and proper motions of bulge stars, and insight into the origin and importance of the X-shaped bulge.

The intrinsic shape of bulges in the CALIFA survey

NASA Astrophysics Data System (ADS)

Costantin, L.; Méndez-Abreu, J.; Corsini, E. M.; Eliche-Moral, M. C.; Tapia, T.; Morelli, L.; Dalla Bontà, E.; Pizzella, A.

2018-02-01

Context. The intrinsic shape of galactic bulges in nearby galaxies provides crucial information to separate bulge types. Aims: We aim to derive accurate constraints to the intrinsic shape of bulges to provide new clues on their formation mechanisms and set new limitations for future simulations. Methods: We retrieved the intrinsic shape of a sample of CALIFA bulges using a statistical approach. Taking advantage of GalMer numerical simulations of binary mergers we estimated the reliability of the procedure. Analyzing the i-band mock images of resulting lenticular remnants, we studied the intrinsic shape of their bulges at different galaxy inclinations. Finally, we introduced a new (B/A, C/A) diagram to analyze possible correlations between the intrinsic shape and the properties of bulges. Results: We tested the method on simulated lenticular remnants, finding that for galaxies with inclinations of 25° ≤ θ ≤ 65° we can safely derive the intrinsic shape of their bulges. We found that our CALIFA bulges tend to be nearly oblate systems (66%), with a smaller fraction of prolate spheroids (19%), and triaxial ellipsoids (15%). The majority of triaxial bulges are in barred galaxies (75%). Moreover, we found that bulges with low Sérsic indices or in galaxies with low bulge-to-total luminosity ratios form a heterogeneous class of objects; additionally, bulges in late-type galaxies or in less massive galaxies have no preference for being oblate, prolate, or triaxial. On the contrary, bulges with high Sérsic index, in early-type galaxies, or in more massive galaxies are mostly oblate systems. Conclusions: We concluded that various evolutionary pathways may coexist in galaxies, with merging events and dissipative collapse being the main mechanisms driving the formation of the most massive oblate bulges and bar evolution reshaping the less massive triaxial bulges.

Wafer level reliability testing: An idea whose time has come

NASA Technical Reports Server (NTRS)

Trapp, O. D.

1987-01-01

Wafer level reliability testing has been nurtured in the DARPA supported workshops, held each autumn since 1982. The seeds planted in 1982 have produced an active crop of very large scale integration manufacturers applying wafer level reliability test methods. Computer Aided Reliability (CAR) is a new seed being nurtured. Users are now being awakened by the huge economic value of the wafer reliability testing technology.

Wafer-Level Vacuum Packaging of Smart Sensors.

PubMed

Hilton, Allan; Temple, Dorota S

2016-10-31

The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors-"low cost" for ubiquitous presence, and "smart" for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology.

Wafer-Level Vacuum Packaging of Smart Sensors

PubMed Central

Hilton, Allan; Temple, Dorota S.

2016-01-01

The reach and impact of the Internet of Things will depend on the availability of low-cost, smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and autonomy. By using wafer-level processes not only for the smart sensor fabrication and integration, but also for packaging, we can further greatly reduce the cost of sensor components and systems as well as further decrease their size and weight. This paper reviews the state-of-the-art in the wafer-level vacuum packaging technology of smart sensors. We describe the processes needed to create the wafer-scale vacuum microchambers, focusing on approaches that involve metal seals and that are compatible with the thermal budget of complementary metal-oxide semiconductor (CMOS) integrated circuits. We review choices of seal materials and structures that are available to a device designer, and present techniques used for the fabrication of metal seals on device and window wafers. We also analyze the deposition and activation of thin film getters needed to maintain vacuum in the ultra-small chambers, and the wafer-to-wafer bonding processes that form the hermetic seal. We discuss inherent trade-offs and challenges of each seal material set and the corresponding bonding processes. Finally, we identify areas for further research that could help broaden implementations of the wafer-level vacuum packaging technology. PMID:27809249

Wafer scale BN on sapphire substrates for improved graphene transport.

PubMed

Vangala, Shivashankar; Siegel, Gene; Prusnick, Timothy; Snure, Michael

2018-06-11

Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO 2 /Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.

HED-TIE: A wafer-scale approach for fabricating hybrid electronic devices with trench isolated electrodes

NASA Astrophysics Data System (ADS)

Banerjee, Sreetama; Bülz, Daniel; Solonenko, Dmytro; Reuter, Danny; Deibel, Carsten; Hiller, Karla; Zahn, Dietrich R. T.; Salvan, Georgeta

2017-05-01

Organic-inorganic hybrid electronic devices (HEDs) offer opportunities for functionalities that are not easily obtainable with either organic or inorganic materials individually. In the strive for down-scaling the channel length in planar geometry HEDs, the best results were achieved with electron beam lithography or nanoimprint lithography. Their application on the wafer level is, however, cost intensive and time consuming. Here, we propose trench isolated electrode (TIE) technology as a fast, cost effective, wafer-level approach for the fabrication of planar HEDs with electrode gaps in the range of 100 nm. We demonstrate that the formation of the organic channel can be realized by deposition from solution as well as by the thermal evaporation of organic molecules. To underline one key feature of planar HED-TIEs, namely full accessibility of the active area of the devices by external stimuli such as light, 6,13-bis (triisopropylsilylethynyl) (TIPS)-pentacene/Au HED-TIEs are successfully tested for possible application as hybrid photodetectors in the visible spectral range.

Recognition of DNA/RNA bulges by antimicrobial and antitumor metallohelices.

PubMed

Malina, Jaroslav; Scott, Peter; Brabec, Viktor

2015-09-07

Bulged structures have been identified in nucleic acids and have been shown to be linked to biomolecular processes involved in numerous diseases. Thus, chemical agents with affinity for bulged nucleic acids are of general biological significance. Herein, the mechanism of specific recognition and stabilization of bulged DNA and RNA by helical bimetallic species was established through detailed molecular biophysics and biochemistry assays. These agents, known as 'flexicates', are potential mimetics of α-helical peptides in cancer treatment, exhibiting antimicrobial and antitumor effects. The flexicates have positive impacts on the thermal stability of DNA duplexes containing bulges, which means that the flexicates interact with the duplexes containing bulges, and that these interactions stabilize the secondary structures of these duplexes. Notably, the stabilising effect of the flexicates increases with the size of the bulge, the maximal stabilization is observed for the duplexes containing a bulge composed of at least three bases. The flexicates bind most preferentially to the bulges composed of pyrimidines flanked on both sides also by pyrimidines. It is suggested that it is so because these bulges exhibit greatest conformational variability in comparison with other combinations of bases in the bulge loop and bases flanking the bulge. Finally, the results indicate that there is only one dominant binding site for the flexicates on the DNA and RNA bulges and that the flexicates bind directly to the bulge or in its close proximity. It is also shown that the flexicates effectively bind to RNA duplexes containing the bulged region of HIV-1 TAR RNA.

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

PubMed Central

Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

2016-01-01

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

New insights on the origin of the High Velocity Peaks in the Galactic Bulge

NASA Astrophysics Data System (ADS)

Fernández-Trincado, J. G.; Robin, A. C.; Moreno, E.; Pérez-Villegas, A.; Pichardo, B.

2017-12-01

We provide new insight on the origin of the cold high-V_{los} peaks (˜200 kms^{-1}) in the Milky Way bulge discovered in the APOGEE commissioning data (Nidever et al. 2012). Here we show that such kinematic behaviour present in the field regions towards the Galactic bulge is not likely associated with orbits that build the boxy/peanut (B/P) bulge. To this purpose, a new set of test particle simulations of a kinematically cold stellar disk evolved in a 3D steady-state barred Milky Way galactic potential, has been analysed in detail. Especially bar particles trapped into the bar are identified through the orbital Jacobi energy E_{J}, which allows us to identify the building blocks of the B/P feature and investigate their kinematic properties. Finally, we present preliminary results showing that the high-V_{los} features observed towards the Milky Way bulge are a natural consequence of a large-scale midplane particle structure, which is unlikely associated with the Galactic bar.

Recognition of DNA bulges by dinuclear iron(II) metallosupramolecular helicates.

PubMed

Malina, Jaroslav; Hannon, Michael J; Brabec, Viktor

2014-02-01

Bulged DNA structures are of general biological significance because of their important roles in a number of biochemical processes. Compounds capable of targeting bulged DNA sequences can be used as probes for studying their role in nucleic acid function, or could even have significant therapeutic potential. The interaction of [Fe(2)L(3)](4+) metallosupramolecular helicates (L = C(25)H(20)N(4)) with DNA duplexes containing bulges has been studied by measurement of the DNA melting temperature and gel electrophoresis. This study was aimed at exploring binding affinities of the helicates for DNA bulges of various sizes and nucleotide sequences. The studies reported herein reveal that both enantiomers of [Fe(2)L(3)](4+) bind to DNA bulges containing at least two unpaired nucleotides. In addition, these helicates show considerably enhanced affinity for duplexes containing unpaired pyrimidines in the bulge and/or pyrimidines flanking the bulge on both sides. We suggest that the bulge creates the structural motif, such as the triangular prismatic pocket formed by the unpaired bulge bases, to accommodate the [Fe(2)L(3)](4+) helicate molecule, and is probably responsible for the affinity for duplexes with a varying number of bulge bases. Our results reveal that DNA bulges represent another example of unusual DNA structures recognized by dinuclear iron(II) ([Fe(2)L(3)](4+)) supramolecular helicates. © 2013 FEBS.

Stable wafer-carrier system

DOEpatents

Rozenzon, Yan; Trujillo, Robert T; Beese, Steven C

2013-10-22

One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

THE X-SHAPED BULGE OF THE MILKY WAY REVEALED BY WISE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ness, Melissa; Lang, Dustin, E-mail: ness@mpia-hd.mpg.de

2016-07-01

The Milky Way bulge has a boxy/peanut morphology and an X-shaped structure. This X-shape has been revealed by the “split in the red clump” from star counts along the line of sight toward the bulge, measured from photometric surveys. This boxy, X-shaped bulge morphology is not unique to the Milky Way and such bulges are observed in other barred spiral galaxies. N -body simulations show that boxy and X-shaped bulges are formed from the disk via dynamical instabilities. It has also been proposed that the Milky Way bulge is not X-shaped, but rather, the apparent split in the red clumpmore » stars is a consequence of different stellar populations, in an old classical spheroidal bulge. We present a Wide-Field Infrared Survey Explorer ( WISE ) image of the Milky Way bulge, produced by downsampling the publicly available “unWISE” coadds. The WISE image of the Milky Way bulge shows that the X-shaped nature of the Milky Way bulge is self-evident and irrefutable. The X-shape morphology of the bulge in itself and the fraction of bulge stars that comprise orbits within this structure has important implications for the formation history of the Milky Way, and, given the ubiquity of boxy X-shaped bulges, spiral galaxies in general.« less

Design Study of Wafer Seals for Future Hypersonic Vehicles

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H.; Finkbeiner, Joshua R.; Steinetz, Bruce M.; DeMange, Jeffrey J.

2005-01-01

Future hypersonic vehicles require high temperature, dynamic seals in advanced hypersonic engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Current seals do not meet the demanding requirements of these applications, so NASA Glenn Research Center is developing improved designs to overcome these shortfalls. An advanced ceramic wafer seal design has shown promise in meeting these needs. Results from a design of experiments study performed on this seal revealed that several installation variables played a role in determining the amount of leakage past the seals. Lower leakage rates were achieved by using a tighter groove width around the seals, a higher seal preload, a tighter wafer height tolerance, and a looser groove length. During flow testing, a seal activating pressure acting behind the wafers combined with simulated vibrations to seat the seals more effectively against the sealing surface and produce lower leakage rates. A seal geometry study revealed comparable leakage for full-scale wafers with 0.125 and 0.25 in. thicknesses. For applications in which lower part counts are desired, fewer 0.25-in.-thick wafers may be able to be used in place of 0.125-in.-thick wafers while achieving similar performance. Tests performed on wafers with a rounded edge (0.5 in. radius) in contact with the sealing surface resulted in flow rates twice as high as those for wafers with a flat edge. Half-size wafers had leakage rates approximately three times higher than those for full-size wafers.

Nuclear starburst activity induced by elongated bulges in spiral galaxies

NASA Astrophysics Data System (ADS)

Kim, Eunbin; Kim, Sungsoo S.; Choi, Yun-Young; Lee, Gwang-Ho; de Grijs, Richard; Lee, Myung Gyoon; Hwang, Ho Seong

2018-06-01

We study the effects of bulge elongation on the star formation activity in the centres of spiral galaxies using the data from the Sloan Digital Sky Survey Data Release 7. We construct a volume-limited sample of face-on spiral galaxies with Mr < -19.5 mag at 0.02 ≤z< 0.055 by excluding barred galaxies, where the aperture of the SDSS spectroscopic fibre covers the bulges of the galaxies. We adopt the ellipticity of bulges measured by Simard et al. (2011) who performed two-dimensional bulge+disc decompositions using the SDSS images of galaxies, and identify nuclear starbursts using the fibre specific star formation rates derived from the SDSS spectra. We find a statistically significant correlation between bulge elongation and nuclear starbursts in the sense that the fraction of nuclear starbursts increases with bulge elongation. This correlation is more prominent for fainter and redder galaxies, which exhibit higher ratios of elongated bulges. We find no significant environmental dependence of the correlation between bulge elongation and nuclear starbursts. These results suggest that non-axisymmetric bulges can efficiently feed the gas into the centre of galaxies to trigger nuclear starburst activity.

A New Population of Galactic Bulge Planetary Nebulas

NASA Astrophysics Data System (ADS)

Stenborg, T. N.

A new population of Galactic bulge planetary nebulas is presented. Nebula candidates were discovered by systematically reviewing archival [OIII] on/off band survey imaging of the central -5° ≤ l ≤ 5°, -5° ≤ b ≤ 5° region around the Galactic centre. An image segmentation and interleaving scheme was developed to facilitate this review. The resultant candidates (> 200) were then double checked against complementary archival Hα sky survey data to screen for obvious planetary nebula (PN) mimics or spurious image artefacts. Confirmatory spectroscopy of the PN candidates was pursued with thin slit, fibre multiobject and wide field spectrographs. Custom software was built to streamline interfacing with third-party spectroscopic management tools and a parallel greedy set cover algorithm implemented for efficient field selection in constrained multi-object observations. The combined imaging and spectroscopic evidence yielded true (4), probable (31) and possible (83) PNs toward the bulge. Secondary discoveries such as new PN mimics and late type stars were by-products of the confirmatory spectroscopy. Instances of literature PN duplication encountered during the investigation were noticed and documented. Spectral analysis of new PNs, including those obtained with a new optimised sky subtraction technique devised and demonstrated here, provided diagnostic data allowing radial velocity and Balmer decrement determination. Using a combined diameter and radial velocity criterion, bona fide bulge PNs were distinguished from new foreground PNs. Where Balmer decrements were available for new bulge PNs, differential aperture photometry was used to provide a modest data increment to Galactic bulge planetary nebula luminosity function (PNLF). The PNLF was revised with data from some new bulge PNs, but more significantly, by a series of corrections to the data derived from previously known bulge PNs (~225), such as improved filter transmission effects, statistically

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

NASA Astrophysics Data System (ADS)

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A.; Park, Jiwoong

2017-10-01

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides--which represent one- and three-atom-thick two-dimensional building blocks, respectively--have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.

PubMed

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A; Park, Jiwoong

2017-10-12

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Trajectories of Cepheid variable stars in the Galactic nuclear bulge

NASA Astrophysics Data System (ADS)

Matsunaga, Noriyuki

2012-06-01

The central region of our Galaxy provides us with a good opportunity to study the evolution of galactic nuclei and bulges because we can observe various phenomena in detail at the proximity of 8 kpc. There is a hierarchical alignment of stellar systems with different sizes; from the extended bulge, the nuclear bulge, down to the compact cluster around the central supermassive blackhole. The nuclear bulge contains stars as young as a few Myr, and even hosts the ongoing star formation. These are in contrast to the more extended bulge which are dominated by old stars, 10Gyr. It is considered that the star formation in the nuclear bulge is caused by fresh gas provided from the inner disk. In this picture, the nuclear bulge plays an important role as the interface between the gas supplier, the inner disk, and the galactic nucleus. Kinematics of young stars in the nuclear bulge is important to discuss the star forming process and the gas circulation in the Galactic Center. We here propose spectroscopic observations of Cepheid variable stars, 25 Myr, which we recently discovered in the nuclear bulge. The spectra taken in this proposal will allow timely estimates of the systemic velocities of the variable stars.

Tube Bulge Process : Theoretical Analysis and Finite Element Simulations

NASA Astrophysics Data System (ADS)

Velasco, Raphael; Boudeau, Nathalie

2007-05-01

This paper is focused on the determination of mechanics characteristics for tubular materials, using tube bulge process. A comparative study is made between two different models: theoretical model and finite element analysis. The theoretical model is completely developed, based first on a geometrical analysis of the tube profile during bulging, which is assumed to strain in arc of circles. Strain and stress analysis complete the theoretical model, which allows to evaluate tube thickness and state of stress, at any point of the free bulge region. Free bulging of a 304L stainless steel is simulated using Ls-Dyna 970. To validate FE simulations approach, a comparison between theoretical and finite elements models is led on several parameters such as: thickness variation at the free bulge region pole with bulge height, tube thickness variation with z axial coordinate, and von Mises stress variation with plastic strain. Finally, the influence of geometrical parameters deviations on flow stress curve is observed using analytical model: deviations of the tube outer diameter, its initial thickness and the bulge height measurement are taken into account to obtain a resulting error on plastic strain and von Mises stress.

Wafer-size free-standing single-crystalline graphene device arrays

NASA Astrophysics Data System (ADS)

Li, Peng; Jing, Gaoshan; Zhang, Bo; Sando, Shota; Cui, Tianhong

2014-08-01

We report an approach of wafer-scale addressable single-crystalline graphene (SCG) arrays growth by using pre-patterned seeds to control the nucleation. The growth mechanism and superb properties of SCG were studied. Large array of free-standing SCG devices were realized. Characterization of SCG as nano switches shows excellent performance with life time (>22 000 times) two orders longer than that of other graphene nano switches reported so far. This work not only shows the possibility of producing wafer-scale high quality SCG device arrays but also explores the superb performance of SCG as nano devices.

Computational Modeling in Plasma Processing for 300 mm Wafers

NASA Technical Reports Server (NTRS)

Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

Migration toward 300 mm wafer size has been initiated recently due to process economics and to meet future demands for integrated circuits. A major issue facing the semiconductor community at this juncture is development of suitable processing equipment, for example, plasma processing reactors that can accomodate 300 mm wafers. In this Invited Talk, scaling of reactors will be discussed with the aid of computational fluid dynamics results. We have undertaken reactor simulations using CFD with reactor geometry, pressure, and precursor flow rates as parameters in a systematic investigation. These simulations provide guidelines for scaling up in reactor design.

Revisiting the Stellar Mass–Angular Momentum–Morphology Relation: Extension to Higher Bulge Fraction and the Effect of Bulge Type

NASA Astrophysics Data System (ADS)

Sweet, Sarah M.; Fisher, David; Glazebrook, Karl; Obreschkow, Danail; Lagos, Claudia; Wang, Liang

2018-06-01

We present the relation between stellar specific angular momentum j *, stellar mass M *, and bulge-to-total light ratio β for The H I Nearby Galaxy Survey, the Calar Alto Legacy Integral Field Area Survey, and Romanowsky & Fall data sets, exploring the existence of a fundamental plane between these parameters, as first suggested by Obreschkow & Glazebrook. Our best-fit M *–j * relation yields a slope of α = 1.03 ± 0.11 with a trivariate fit including β. When ignoring the effect of β, the exponent α = 0.56 ± 0.06 is consistent with α = 2/3 that is predicted for dark matter halos. There is a linear β–j */M * relation for β ≲ 0.4, exhibiting a general trend of increasing β with decreasing j */M *. Galaxies with β ≳ 0.4 have higher j * than predicted by the relation. Pseudobulge galaxies have preferentially lower β for a given j */M * than galaxies that contain classical bulges. Pseudobulge galaxies follow a well-defined track in β–j */M * space, consistent with Obreschkow & Glazebrook, while galaxies with classical bulges do not. These results are consistent with the hypothesis that while growth in either bulge type is linked to a decrease in j */M *, the mechanisms that build pseudobulges seem to be less efficient at increasing bulge mass per decrease in specific angular momentum than those that build classical bulges.

Does the Galactic Bulge Have Fewer Planets?

NASA Astrophysics Data System (ADS)

Kohler, Susanna

2016-12-01

The Milky Ways dense central bulge is a very different environment than the surrounding galactic disk in which we live. Do the differences affect the ability of planets to form in the bulge?Exploring Galactic PlanetsSchematic illustrating how gravitational microlensing by an extrasolar planet works. [NASA]Planet formation is a complex process with many aspects that we dont yet understand. Do environmental properties like host star metallicity, the density of nearby stars, or the intensity of the ambient radiation field affect the ability of planets to form? To answer these questions, we will ultimately need to search for planets around stars in a large variety of different environments in our galaxy.One way to detect recently formed, distant planets is by gravitational microlensing. In this process, light from a distant source star is bent by a lens star that is briefly located between us and the source. As the Earth moves, this momentary alignment causes a blip in the sources light curve that we can detect and planets hosted by the lens star can cause an additional observable bump.Artists impression of the Milky Way galaxy. The central bulge is much denserthan the surroundingdisk. [ESO/NASA/JPL-Caltech/M. Kornmesser/R. Hurt]Relative AbundancesMost source stars reside in the galactic bulge, so microlensing events can probe planetary systems at any distance between the Earth and the galactic bulge. This means that planet detections from microlensing could potentially be used to measure the relative abundances of exoplanets in different parts of our galaxy.A team of scientists led by Matthew Penny, a Sagan postdoctoral fellow at Ohio State University, set out to do just that. The group considered a sample of 31 exoplanetary systems detected by microlensing and asked the following question: are the planet abundances in the galactic bulge and the galactic disk the same?A Paucity of PlanetsTo answer this question, Penny and collaborators derived the expected

Chemical evolution of the Galactic bulge as traced by microlensed dwarf and subgiant stars. IV. Two bulge populations

NASA Astrophysics Data System (ADS)

Bensby, T.; Adén, D.; Meléndez, J.; Gould, A.; Feltzing, S.; Asplund, M.; Johnson, J. A.; Lucatello, S.; Yee, J. C.; Ramírez, I.; Cohen, J. G.; Thompson, I.; Bond, I. A.; Gal-Yam, A.; Han, C.; Sumi, T.; Suzuki, D.; Wada, K.; Miyake, N.; Furusawa, K.; Ohmori, K.; Saito, To.; Tristram, P.; Bennett, D.

2011-09-01

Based on high-resolution (R ≈ 42 000 to 48 000) and high signal-to-noise (S/N ≈ 50 to 150) spectra obtained with UVES/VLT, we present detailed elemental abundances (O, Na, Mg, Al, Si, Ca, Ti, Cr, Fe, Ni, Zn, Y, and Ba) and stellar ages for 12 new microlensed dwarf and subgiant stars in the Galactic bulge. Including previous microlensing events, the sample of homogeneously analysed bulge dwarfs has now grown to 26. The analysis is based on equivalent width measurements and standard 1-D LTE MARCS model stellar atmospheres. We also present NLTE Li abundances based on line synthesis of the 7Li line at 670.8 nm. The results from the 26 microlensed dwarf and subgiant stars show that the bulge metallicity distribution (MDF) is double-peaked; one peak at [Fe/H] ≈ -0.6 and one at [Fe/H] ≈ + 0.3, and with a dearth of stars around solar metallicity. This is in contrast to the MDF derived from red giants in Baade's window, which peaks at this exact value. A simple significance test shows that it is extremely unlikely to have such a gap in the microlensed dwarf star MDF if the dwarf stars are drawn from the giant star MDF. To resolve this issue we discuss several possibilities, but we can not settle on a conclusive solution for the observed differences. We further find that the metal-poor bulge dwarf stars arepredominantly old with ages greater than 10 Gyr, while the metal-rich bulge dwarf stars show a wide range of ages. The metal-poor bulge sample is very similar to the Galactic thick disk in terms of average metallicity, elemental abundance trends, and stellar ages. Speculatively, the metal-rich bulge population might be the manifestation of the inner thin disk. If so, the two bulge populations could support the recent findings, based on kinematics, that there are no signatures of a classical bulge and that the Milky Way is a pure-disk galaxy. Also, recent claims of a flat IMF in the bulge based on the MDF of giant stars may have to be revised based on the MDF and

Abundances of disk and bulge giants from high-resolution optical spectra. II. O, Mg, Ca, and Ti in the bulge sample

NASA Astrophysics Data System (ADS)

Jönsson, H.; Ryde, N.; Schultheis, M.; Zoccali, M.

2017-02-01

Context. Determining elemental abundances of bulge stars can, via chemical evolution modeling, help to understand the formation and evolution of the bulge. Recently there have been claims both for and against the bulge having a different [α/Fe] versus [Fe/H] trend as compared to the local thick disk. This could possibly indicate a faster, or at least different, formation timescale of the bulge as compared to the local thick disk. Aims: We aim to determine the abundances of oxygen, magnesium, calcium, and titanium in a sample of 46 bulge K giants, 35 of which have been analyzed for oxygen and magnesium in previous works, and compare this sample to homogeneously determined elemental abundances of a local disk sample of 291 K giants. Methods: We used spectral synthesis to determine both the stellar parameters and elemental abundances of the bulge stars analyzed here. We used the exact same method that we used to analyze the comparison sample of 291 local K giants in Paper I of this series. Results: Compared to the previous analysis of the 35 stars in our sample, we find lower [Mg/Fe] for [Fe/H] >-0.5, and therefore contradict the conclusion about a declining [O/Mg] for increasing [Fe/H]. We instead see a constant [O/Mg] over all the observed [Fe/H] in the bulge. Furthermore, we find no evidence for a different behavior of the alpha-iron trends in the bulge as compared to the local thick disk from our two samples. Note to the reader: following the publication of the corrigendum, the subtitle of the article was corrected on April 6, 2017. "O, Mg, Co, and Ti" has been replaced by "O, Mg, Ca, and Ti".Based on observations collected at the European Southern Observatory, Chile (ESO programs 71.B-0617(A), 073.B-0074(A), and 085.B-0552(A)).

Effect of the Diurnal Atmospheric Bulge on Satellite Accelerations

NASA Technical Reports Server (NTRS)

Wyatt, Stanley P.

1961-01-01

Formulas are developed to express the secular acceleration of a satellite on passing through an atmosphere which bulges in the sunward direction and in which the scale height increases with height, these two properties of the high atmosphere having previously been established from satellite observations. Comparison of the new formulas with those for a spherically symmetric atmosphere of constant scale height indicates that deduced atmospheric densities may be systematically incorrect by up to 50 or 60 percent at heights of 500 to 600 km when the earlier and simpler equations are used.

Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays

NASA Astrophysics Data System (ADS)

Forsberg, Fredrik; Roxhed, Niclas; Fischer, Andreas C.; Samel, Björn; Ericsson, Per; Hoivik, Nils; Lapadatu, Adriana; Bring, Martin; Kittilsland, Gjermund; Stemme, Göran; Niklaus, Frank

2013-09-01

Imaging in the long wavelength infrared (LWIR) range from 8 to 14 μm is an extremely useful tool for non-contact measurement and imaging of temperature in many industrial, automotive and security applications. However, the cost of the infrared (IR) imaging components has to be significantly reduced to make IR imaging a viable technology for many cost-sensitive applications. This paper demonstrates new and improved fabrication and packaging technologies for next-generation IR imaging detectors based on uncooled IR bolometer focal plane arrays. The proposed technologies include very large scale heterogeneous integration for combining high-performance, SiGe quantum-well bolometers with electronic integrated read-out circuits and CMOS compatible wafer-level vacuum packing. The fabrication and characterization of bolometers with a pitch of 25 μm × 25 μm that are arranged on read-out-wafers in arrays with 320 × 240 pixels are presented. The bolometers contain a multi-layer quantum well SiGe thermistor with a temperature coefficient of resistance of -3.0%/K. The proposed CMOS compatible wafer-level vacuum packaging technology uses Cu-Sn solid-liquid interdiffusion (SLID) bonding. The presented technologies are suitable for implementation in cost-efficient fabless business models with the potential to bring about the cost reduction needed to enable low-cost IR imaging products for industrial, security and automotive applications.

Fabrication of uniform nanoscale cavities via silicon direct wafer bonding.

PubMed

Thomson, Stephen R D; Perron, Justin K; Kimball, Mark O; Mehta, Sarabjit; Gasparini, Francis M

2014-01-09

Measurements of the heat capacity and superfluid fraction of confined (4)He have been performed near the lambda transition using lithographically patterned and bonded silicon wafers. Unlike confinements in porous materials often used for these types of experiments(3), bonded wafers provide predesigned uniform spaces for confinement. The geometry of each cell is well known, which removes a large source of ambiguity in the interpretation of data. Exceptionally flat, 5 cm diameter, 375 µm thick Si wafers with about 1 µm variation over the entire wafer can be obtained commercially (from Semiconductor Processing Company, for example). Thermal oxide is grown on the wafers to define the confinement dimension in the z-direction. A pattern is then etched in the oxide using lithographic techniques so as to create a desired enclosure upon bonding. A hole is drilled in one of the wafers (the top) to allow for the introduction of the liquid to be measured. The wafers are cleaned(2) in RCA solutions and then put in a microclean chamber where they are rinsed with deionized water(4). The wafers are bonded at RT and then annealed at ~1,100 °C. This forms a strong and permanent bond. This process can be used to make uniform enclosures for measuring thermal and hydrodynamic properties of confined liquids from the nanometer to the micrometer scale.

Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, TaeWan; Mun, Jihun; Park, Hyeji; Joung, DaeHwa; Diware, Mangesh; Won, Chegal; Park, Jonghoo; Jeong, Soo-Hwan; Kang, Sang-Woo

2017-05-01

Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS2) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS2 monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer. The influences of growth pressure, ambient gases (Ar, H2), and S/Mo molar flow ratio on the MoS2 layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS2-based field effect transistors achieve an electron mobility of 0.47 cm2 V-1 s-1 and on/off current ratio of 5.4 × 104. This work demonstrates the potential for reliable wafer-scale production of 2D MoS2 for practical applications in next-generation electronic and optical devices.

The Globular Clusters of the Galactic Bulge: Results from Multiwavelength Follow-up Imaging

NASA Astrophysics Data System (ADS)

Cohen, Roger; Geisler, Doug; Mauro, Francesco; Alonso Garcia, Javier; Hempel, Maren; Sarajedini, Ata

2018-01-01

The Galactic globular clusters (GGCs) located towards the bulge of the Milky Way suffer from severe total and differential extinction and high field star densities. They have therefore been systematically excluded from deep, large-scale homogenous GGC surveys, and will present a challenge for Gaia. Meanwhile, existing observations of bulge GGCs have revealed tantalizing hints that they hold clues to Galactic formation and evolution not found elsewhere. Therefore, in order to better characterize these poorly studied stellar systems and place them in the context of their optically well-studied counterparts, we have undertaken imaging programs at optical and near-infrared wavelengths. We describe these programs and present a variety of results, including self-consistent measurement of bulge GGC ages and structural parameters. The limitations imposed by spatially variable extinction and extinction law are highlighted, along with the complimentary nature of forthcoming facilities, allowing us to finally complete our picture of the Milky Way GGC system.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-05-20

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Structured wafer for device processing

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-11-25

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder

NASA Astrophysics Data System (ADS)

Sparks, D.; Queen, G.; Weston, R.; Woodward, G.; Putty, M.; Jordan, L.; Zarabadi, S.; Jayakar, K.

2001-11-01

The fabrication and reliability of a solder wafer-to-wafer bonding process is discussed. Using a solder reflow process allows vacuum packaging to be accomplished with unplanarized complementary metal-oxide semiconductor (CMOS) surface topography. This capability enables standard CMOS processes, and integrated microelectromechanical systems devices to be packaged at the chip-level. Alloy variations give this process the ability to bond at lower temperatures than most alternatives. Factors affecting hermeticity, shorts, Q values, shifting cavity pressure, wafer saw cleanliness and corrosion resistance will be covered.

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

PubMed

Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

2012-07-17

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Novel scanning electron microscope bulge test technique integrated with loading function

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chuanwei; Xie, Huimin, E-mail: liuzw@bit.edu.cn, E-mail: xiehm@mail.tsinghua.edu.cn; Liu, Zhanwei, E-mail: liuzw@bit.edu.cn, E-mail: xiehm@mail.tsinghua.edu.cn

2014-10-15

Membranes and film-on-substrate structures are critical elements for some devices in electronics industry and for Micro Electro Mechanical Systems devices. These structures are normally at the scale of micrometer or even nanometer. Thus, the measurement for the mechanical property of these membranes poses a challenge over the conventional measurements at macro-scales. In this study, a novel bulge test method is presented for the evaluation of mechanical property of micro thin membranes. Three aspects are discussed in the study: (a) A novel bulge test with a Scanning Electron Microscope system realizing the function of loading and measuring simultaneously; (b) a simplifiedmore » Digital Image Correlation method for a height measurement; and (c) an imaging distortion correction by the introduction of a scanning Moiré method. Combined with the above techniques, biaxial modulus as well as Young's modulus of the polyimide film can be determined. Besides, a standard tensile test is conducted as an auxiliary experiment to validate the feasibility of the proposed method.« less

The Illustris simulation: supermassive black hole-galaxy connection beyond the bulge

NASA Astrophysics Data System (ADS)

Mutlu-Pakdil, Burçin; Seigar, Marc S.; Hewitt, Ian B.; Treuthardt, Patrick; Berrier, Joel C.; Koval, Lauren E.

2018-02-01

We study the spiral arm morphology of a sample of the local spiral galaxies in the Illustris simulation and explore the supermassive black hole-galaxy connection beyond the bulge (e.g. spiral arm pitch angle, total stellar mass, dark matter mass, and total halo mass), finding good agreement with other theoretical studies and observational constraints. It is important to study the properties of supermassive black holes and their host galaxies through both observations and simulations and compare their results in order to understand their physics and formative histories. We find that Illustris prediction for supermassive black hole mass relative to pitch angle is in rather good agreement with observations and that barred and non-barred galaxies follow similar scaling relations. Our work shows that Illustris presents very tight correlations between supermassive black hole mass and large-scale properties of the host galaxy, not only for early-type galaxies but also for low-mass, blue and star-forming galaxies. These tight relations beyond the bulge suggest that halo properties determine those of a disc galaxy and its supermassive black hole.

Discovery of carbon-rich Miras in the Galactic bulge

NASA Astrophysics Data System (ADS)

Matsunaga, Noriyuki; Menzies, John W.; Feast, Michael W.; Whitelock, Patricia A.; Onozato, Hiroki; Barway, Sudhanshu; Aydi, Elias

2017-08-01

Only one carbon-rich (C-rich, hereinafter) Mira variable has so far been suggested as a member of the Galactic bulge and this is in a symbiotic system. Here we describe a method for selecting C-rich candidates from an infrared colour-colour diagram, (J - Ks) versus ([9] - [18]). Follow-up low-resolution spectroscopy resulted in the detection of eight C-rich Mira variables from a sample of 36 candidates towards the Galactic bulge. Our near-infrared photometry indicates that two of these, including the known symbiotic, are closer than the main body of the bulge while a third is a known foreground object. Of the five bulge members, one shows He I and [O II] emission and is possibly another symbiotic star. Our method is useful for identifying rare C-rich stars in the Galactic bulge and elsewhere. The age of these C-rich stars and the evolutionary process which produced them remain uncertain. They could be old and the products of either binary mass transfer or mergers, I.e. the descendants of blue stragglers, but we cannot rule out the possibility that they belong to a small in situ population of metal-poor intermediate age (<5 Gyr) stars in the bulge or that they have been accreted from a dwarf galaxy.

Wafer level reliability for high-performance VLSI design

NASA Technical Reports Server (NTRS)

Root, Bryan J.; Seefeldt, James D.

1987-01-01

As very large scale integration architecture requires higher package density, reliability of these devices has approached a critical level. Previous processing techniques allowed a large window for varying reliability. However, as scaling and higher current densities push reliability to its limit, tighter control and instant feedback becomes critical. Several test structures developed to monitor reliability at the wafer level are described. For example, a test structure was developed to monitor metal integrity in seconds as opposed to weeks or months for conventional testing. Another structure monitors mobile ion contamination at critical steps in the process. Thus the reliability jeopardy can be assessed during fabrication preventing defective devices from ever being placed in the field. Most importantly, the reliability can be assessed on each wafer as opposed to an occasional sample.

Bulge Growth Through Disc Instabilities in High-Redshift Galaxies

NASA Astrophysics Data System (ADS)

Bournaud, Frédéric

The role of disc instabilities, such as bars and spiral arms, and the associated resonances, in growing bulges in the inner regions of disc galaxies have long been studied in the low-redshift nearby Universe. There it has long been probed observationally, in particular through peanut-shaped bulges (Chap. 14 10.1007/978-3-319-19378-6_14"). This secular growth of bulges in modern disc galaxies is driven by weak, non-axisymmetric instabilities: it mostly produces pseudobulges at slow rates and with long star-formation timescales. Disc instabilities at high redshift (z > 1) in moderate-mass to massive galaxies (1010 to a few 1011 M⊙ of stars) are very different from those found in modern spiral galaxies. High-redshift discs are globally unstable and fragment into giant clumps containing 108-9 M⊙ of gas and stars each, which results in highly irregular galaxy morphologies. The clumps and other features associated to the violent instability drive disc evolution and bulge growth through various mechanisms on short timescales. The giant clumps can migrate inward and coalesce into the bulge in a few 108 years. The instability in the very turbulent media drives intense gas inflows toward the bulge and nuclear region. Thick discs and supermassive black holes can grow concurrently as a result of the violent instability. This chapter reviews the properties of high-redshift disc instabilities, the evolution of giant clumps and other features associated to the instability, and the resulting growth of bulges and associated sub-galactic components.

Stellar populations in the bulges of isolated galaxies

NASA Astrophysics Data System (ADS)

Morelli, L.; Parmiggiani, M.; Corsini, E. M.; Costantin, L.; Dalla Bontà, E.; Méndez-Abreu, J.; Pizzella, A.

2016-12-01

We present photometry and long-slit spectroscopy for 12 S0 and spiral galaxies selected from the Catalogue of Isolated Galaxies. The structural parameters of the sample galaxies are derived from the Sloan Digital Sky Survey I-band images by performing a two-dimensional photometric decomposition of the surface brightness distribution. This is assumed to be the sum of the contribution of a Sérsic bulge, an exponential disc, and a Ferrers bar characterized by elliptical and concentric isophotes with constant ellipticity and position angles. The rotation curves and velocity dispersion profiles of the stellar component are measured from the spectra obtained along the major axis of galaxies. The radial profiles of the Hβ, Mg and Fe line-strength indices are derived too. Correlations between the central values of the Mg2 and line-strength indices and the velocity dispersion are found. The mean age, total metallicity and total α/Fe enhancement of the stellar population in the centre and at the radius, where the bulge gives the same contribution to the total surface brightness as the remaining components, are obtained using stellar population models with variable element abundance ratios. We identify intermediate-age bulges with solar metallicity and old bulges with a large spread in metallicity. Most of the sample bulges display supersolar α/Fe enhancement, no gradient in age and negative gradients of metallicity and α/Fe enhancement. These findings support a formation scenario via dissipative collapse where environmental effects are remarkably less important than in the assembly of bulges of galaxies in groups and clusters.

What the Milky Way bulge reveals about the initial metallicity gradients in the disc

NASA Astrophysics Data System (ADS)

Fragkoudi, F.; Di Matteo, P.; Haywood, M.; Khoperskov, S.; Gomez, A.; Schultheis, M.; Combes, F.; Semelin, B.

2017-11-01

We use APOGEE DR13 data to examine the metallicity trends in the Milky Way (MW) bulge and we explore their origin by comparing two N-body models of isolated galaxies that develop a bar and a boxy/peanut (b/p) bulge. Both models have been proposed as scenarios for reconciling a disc origin of the MW bulge with a negative vertical metallicity gradient. The first model is a superposition of co-spatial, I.e. overlapping, disc populations with different scale heights, kinematics, and metallicities. In this model the thick, metal-poor, and centrally concentrated disc populations contribute significantly to the stellar mass budget in the inner galaxy. The second model is a single disc with an initial steep radial metallicity gradient; this disc is mapped by the bar into the b/p bulge in such a way that the vertical metallicity gradient of the MW bulge is reproduced, as has been shown already in previous works in the literature. However, as we show here, the latter model does not reproduce the positive longitudinal metallicity gradient of the inner disc, nor the metal-poor innermost regions seen in the data. On the other hand, the model with co-spatial thin and thick disc populations reproduces all the aforementioned trends. We therefore see that it is possible to reconcile a (primarily) disc origin for the MW bulge with the observed trends in metallicity by mapping the inner thin and thick discs of the MW into a b/p. For this scenario to reproduce the observations, the α-enhanced, metal-poor, thick disc populations must have a significant mass contribution in the inner regions, as has been suggested for the Milky Way.

Age bimodality in the central region of pseudo-bulges in S0 galaxies

NASA Astrophysics Data System (ADS)

Mishra, Preetish K.; Barway, Sudhanshu; Wadadekar, Yogesh

2017-11-01

We present evidence for bimodal stellar age distribution of pseudo-bulges of S0 galaxies as probed by the Dn(4000) index. We do not observe any bimodality in age distribution for pseudo-bulges in spiral galaxies. Our sample is flux limited and contains 2067 S0 and 2630 spiral galaxies drawn from the Sloan Digital Sky Survey. We identify pseudo-bulges in S0 and spiral galaxies, based on the position of the bulge on the Kormendy diagram and their central velocity dispersion. Dividing the pseudo-bulges of S0 galaxies into those containing old and young stellar populations, we study the connection between global star formation and pseudo-bulge age on the u - r colour-mass diagram. We find that most old pseudo-bulges are hosted by passive galaxies while majority of young bulges are hosted by galaxies that are star forming. Dividing our sample of S0 galaxies into early-type S0s and S0/a galaxies, we find that old pseudo-bulges are mainly hosted by early-type S0 galaxies while most of the pseudo-bulges in S0/a galaxies are young. We speculate that morphology plays a strong role in quenching of star formation in the disc of these S0 galaxies, which stops the growth of pseudo-bulges, giving rise to old pseudo-bulges and the observed age bimodality.

Galaxies Grow Their Bulges and Black Holes in Diverse Ways

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Eric F.; Harmsen, Benjamin; D’Souza, Richard

Galaxies with Milky Way–like stellar masses have a wide range of bulge and black hole masses; in turn, these correlate with other properties such as star formation history. While many processes may drive bulge formation, major and minor mergers are expected to play a crucial role. Stellar halos offer a novel and robust measurement of galactic merger history; cosmologically motivated models predict that mergers with larger satellites produce more massive, higher-metallicity stellar halos, reproducing the recently observed stellar halo metallicity–mass relation. We quantify the relationship between stellar halo mass and bulge or black hole prominence using a sample of 18more » Milky Way-mass galaxies with newly available measurements of (or limits on) stellar halo properties. There is an order of magnitude range in bulge mass, and two orders of magnitude in black hole mass, at a given stellar halo mass (or, equivalently, merger history). Galaxies with low-mass bulges show a wide range of quiet merger histories, implying formation mechanisms that do not require intense merging activity. Galaxies with massive “classical” bulges and central black holes also show a wide range of merger histories. While three of these galaxies have massive stellar halos consistent with a merger origin, two do not—merging appears to have had little impact on making these two massive “classical” bulges. Such galaxies may be ideal laboratories to study massive bulge formation through pathways such as early gas-rich accretion, violent disk instabilities, or misaligned infall of gas throughout cosmic time.« less

Galaxies Grow Their Bulges and Black Holes in Diverse Ways

NASA Astrophysics Data System (ADS)

Bell, Eric F.; Monachesi, Antonela; Harmsen, Benjamin; de Jong, Roelof S.; Bailin, Jeremy; Radburn-Smith, David J.; D'Souza, Richard; Holwerda, Benne W.

2017-03-01

Galaxies with Milky Way-like stellar masses have a wide range of bulge and black hole masses; in turn, these correlate with other properties such as star formation history. While many processes may drive bulge formation, major and minor mergers are expected to play a crucial role. Stellar halos offer a novel and robust measurement of galactic merger history; cosmologically motivated models predict that mergers with larger satellites produce more massive, higher-metallicity stellar halos, reproducing the recently observed stellar halo metallicity-mass relation. We quantify the relationship between stellar halo mass and bulge or black hole prominence using a sample of 18 Milky Way-mass galaxies with newly available measurements of (or limits on) stellar halo properties. There is an order of magnitude range in bulge mass, and two orders of magnitude in black hole mass, at a given stellar halo mass (or, equivalently, merger history). Galaxies with low-mass bulges show a wide range of quiet merger histories, implying formation mechanisms that do not require intense merging activity. Galaxies with massive “classical” bulges and central black holes also show a wide range of merger histories. While three of these galaxies have massive stellar halos consistent with a merger origin, two do not—merging appears to have had little impact on making these two massive “classical” bulges. Such galaxies may be ideal laboratories to study massive bulge formation through pathways such as early gas-rich accretion, violent disk instabilities, or misaligned infall of gas throughout cosmic time.

MEMS packaging with etching and thinning of lid wafer to form lids and expose device wafer bond pads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chanchani, Rajen; Nordquist, Christopher; Olsson, Roy H

In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

DOE PAGES

Berman, Diana; Deshmukh, Sanket; Narayanan, Badri; ...

2016-07-04

The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the processmore » can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.« less

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berman, Diana; Deshmukh, Sanket; Narayanan, Badri

The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the processmore » can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.« less

Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

NASA Astrophysics Data System (ADS)

Turner, K. T.; Spearing, S. M.

2002-12-01

Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

I-line stepper based overlay evaluation method for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2018-03-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules additionally require to process the backside of the wafer; thus require an accurate alignment between the front and backside of the wafer. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 µm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8-9]. In this work, the non-contact infrared alignment system of the Nikon® i-line Stepper NSR-SF150 for both alignment and the overlay determination of bonded wafer stacks with embedded alignment marks are used to achieve an accurate alignment between the different wafer sides. The embedded field image alignment (FIA) marks of the interface and the device wafer top layer are measured in a single measurement job. By taking the

A Comparison of Galaxy Bulge+Disk Decomposition Between Pan-STARRS and SDSS

NASA Astrophysics Data System (ADS)

Lokken, Martine Elena; McPartland, Conor; Sanders, David B.

2018-01-01

Measurements of the size and shape of bulges in galaxies provide key constraints for models of galaxy evolution. A comprehensive catalog of bulge measurements for Sloan Digital Sky Survey (SDSS) DR7 galaxies is currently available to the public. However, the Pan-STARRS1 (PS1) 3π survey now covers the same region with ~1-2 mag deeper photometry, a ~10-30% smaller PSF, and additional coverage in y-band. To test how much improvement in galaxy parameter measurements (e.g. bulge + disk) can be achieved using the new PS1 data, we make use of ultra-deep imaging data from the Hyper Suprime-Cam (HSC) Subaru Strategic Program (SSP). We fit bulge+disk models to images of 372 bright (mi < 18.5) galaxies detected in all three surveys. Comparison of galaxy parameters derived from SDSS and PS1 images with those measured from HSC-SSP images shows a tighter correlation between PS1 and SSP measurements for both bulge and disk parameters. Bulge parameters, such as bulge-to-total fraction and bulge radius, show the strongest improvement. However, measurements of all parameters degrade for galaxies with total r-band magnitude below the SDSS spectroscopic limit, mr = 17.7. We plan to use the PS1 3π survey data to produce an updated catalog of bulge+disk decomposition measurements for the entire SDSS DR7 spectroscopic galaxy sample.

Performance Evaluations of Ceramic Wafer Seals

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H., Jr.; DeMange, Jeffrey J.; Steinetz, Bruce M.

2006-01-01

Future hypersonic vehicles will require high temperature, dynamic seals in advanced ramjet/scramjet engines and on the vehicle airframe to seal the perimeters of movable panels, flaps, and doors. Seal temperatures in these locations can exceed 2000 F, especially when the seals are in contact with hot ceramic matrix composite sealing surfaces. NASA Glenn Research Center is developing advanced ceramic wafer seals to meet the needs of these applications. High temperature scrub tests performed between silicon nitride wafers and carbon-silicon carbide rub surfaces revealed high friction forces and evidence of material transfer from the rub surfaces to the wafer seals. Stickage between adjacent wafers was also observed after testing. Several design changes to the wafer seals were evaluated as possible solutions to these concerns. Wafers with recessed sides were evaluated as a potential means of reducing friction between adjacent wafers. Alternative wafer materials are also being considered as a means of reducing friction between the seals and their sealing surfaces and because the baseline silicon nitride wafer material (AS800) is no longer commercially available.

Why are classical bulges more common in S0 galaxies than in spiral galaxies?

NASA Astrophysics Data System (ADS)

Mishra, Preetish K.; Wadadekar, Yogesh; Barway, Sudhanshu

2018-07-01

In this paper, we try to understand why the classical bulge fraction observed in S0 galaxies is significantly higher than that in spiral galaxies. We carry out a comparative study of the bulge and global properties of a sample of spiral and S0 galaxies in a fixed environment. Our sample is flux limited and contains 262 spiral and 155 S0 galaxies drawn from the Sloan Digital Sky Survey. We have classified bulges into classical and pseudo-bulge categories based on their position on the Kormendy diagram. Dividing our sample into bins of galaxy stellar mass, we find that the fraction of S0 galaxies hosting a classical bulge is significantly higher than the classical bulge fraction seen in spirals even at fixed stellar mass. We have compared the bulge and the global properties of spirals and S0 galaxies in our sample and find indications that spiral galaxies which host a classical bulge, preferentially get converted into S0 population as compared to pseudo-bulge hosting spirals. By studying the star formation properties of our galaxies in the NUV-r colour-mass diagram, we find that the pseudo-bulge hosting spirals are mostly star forming while the majority of classical bulge host spirals are in the green valley or in the passive sequence. We suggest that some internal process, such as AGN feedback or morphological quenching due to the massive bulge, quenches these classical bulge hosting spirals and transforms them into S0 galaxies, thus resulting in the observed predominance of the classical bulge in S0 galaxies.

Mapping the X-shaped Milky Way Bulge

NASA Astrophysics Data System (ADS)

Saito, R. K.; Zoccali, M.; McWilliam, A.; Minniti, D.; Gonzalez, O. A.; Hill, V.

2011-09-01

We analyzed the distribution of the red clump (RC) stars throughout the Galactic bulge using Two Micron All Sky Survey data. We mapped the position of the RC in 1 deg2 fields within the area |l| <= 8fdg5 and 3fdg5 <= |b| <= 8fdg5, for a total of 170 deg2. The single RC seen in the central area splits into two components at high Galactic longitudes in both hemispheres, produced by two structures at different distances along the same line of sight. The X-shape is clearly visible in the Z-X plane for longitudes close to the l = 0° axis. Crude measurements of the space densities of RC stars in the bright and faint RC populations are consistent with the adopted RC distances, providing further supporting evidence that the X-structure is real, and that there is approximate front-back symmetry in our bulge fields. We conclude that the Milky Way bulge has an X-shaped structure within |l| <~ 2°, seen almost edge-on with respect to the line of sight. Additional deep near-infrared photometry extending into the innermost bulge regions combined with spectroscopic data is needed in order to discriminate among the different possibilities that can cause the observed X-shaped structure.

Process optimization of joining by upset bulging with local heating

NASA Astrophysics Data System (ADS)

Rusch, Michael; Almohallami, Amer; Sviridov, Alexander; Bonk, Christian; Behrens, Bernd-Arno; Bambach, Markus

2017-10-01

Joining by upset bulging is a mechanical joining method where axial load is applied to a tube to form two revolving bulges, which clamp the parts to be joined and create a force and form fit. It can be used to join tubes with other structures such as sheets, plates, tubes or profiles of the same or different materials. Other processes such as welding are often limited in joining multi-material assemblies or high-strength materials. With joining by upset bulging at room temperature, the main drawback is the possible initiation of damage (cracks) in the inner buckling zone because of high local stresses and strains. In this paper, a method to avoid the formation of cracks is introduced. Before forming the bulge the tube is locally heated by an induction coil. For the construction steel (E235+N) a maximum temperature of 700 °C was used to avoid phase transformation. For the numerical study of the process the mechanical properties of the tube material were examined at different temperatures and strain rates to determine its flow curves. A parametrical FE model was developed to simulate the bulging process with local heating. Experiments with local heating were executed and metallographic studies of the bulging area were conducted. While specimens heated to 500 °C showed small cracks left, damage-free flanges could be created at 600 and 700 °C. Static testing of damage-free bulges showed improvements in tensile strength and torsion strength compared to bulges formed at room-temperature, while bending and compression behavior remained nearly unchanged. In cyclic testing the locally heated specimens underwent about 3.7 times as many cycles before failure as the specimens formed at room temperature.

Microemulsion-Based Mucoadhesive Buccal Wafers: Wafer Formation, In Vitro Release, and Ex Vivo Evaluation.

PubMed

Pham, Minh Nguyet; Van Vo, Toi; Tran, Van-Thanh; Tran, Phuong Ha-Lien; Tran, Thao Truong-Dinh

2017-10-01

Microemulsion has the potentials to enhance dissolution as well as facilitate absorption and permeation of poorly water-soluble drugs through biological membranes. However, its application to govern a controlled release buccal delivery for local treatment has not been discovered. The aim of this study is to develop microemulsion-based mucoadhesive wafers for buccal delivery based on an incorporation of the microemulsion with mucoadhesive agents and mannitol. Ratio of oil to surfactant to water in the microemulsion significantly impacted quality of the wafers. Furthermore, the combination of carbopol and mannitol played a key role in forming the desired buccal wafers. The addition of an extra 50% of water to the formulation was suitable for wafer formation by freeze-drying, which affected the appearance and distribution of carbopol in the wafers. The amount of carbopol was critical for the enhancement of mucoadhesive properties and the sustained drug release patterns. Release study presented a significant improvement of the drug release profile following sustained release for 6 h. Ex vivo mucoadhesive studies provided decisive evidence to the increased retention time of wafers along with the increased carbopol content. The success of this study indicates an encouraging strategy to formulate a controlled drug delivery system by incorporating microemulsions into mucoadhesive wafers.

Wafer-scale design of lightweight and transparent electronics that wraps around hairs

NASA Astrophysics Data System (ADS)

Salvatore, Giovanni A.; Münzenrieder, Niko; Kinkeldei, Thomas; Petti, Luisa; Zysset, Christoph; Strebel, Ivo; Büthe, Lars; Tröster, Gerhard

2014-01-01

Electronics on very thin substrates have shown remarkable bendability, conformability and lightness, which are important attributes for biological tissues sensing, wearable or implantable devices. Here we propose a wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-μm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl- alcohol layer. The thin substrate ensures extreme flexibility, which is demonstrated by transistors that continue to work when wrapped around human hairs. In parallel, the use of amorphous oxide semiconductor and high-K dielectric enables the realization of analogue amplifiers operating at 12 V and above 1 MHz. Electronics can be transferred on any object, surface and on biological tissues like human skin and plant leaves. We foresee a potential application as smart contact lenses, covered with light, transparent and flexible devices, which could serve to monitor intraocular pressure for glaucoma disease.

Metallicity-dependent kinematics and morphology of the Milky Way bulge

NASA Astrophysics Data System (ADS)

Athanassoula, E.; Rodionov, S. A.; Prantzos, N.

2017-05-01

We use N-body chemo-dynamic simulations to study the coupling between morphology, kinematics and metallicity of the bar/bulge region of our Galaxy. We make qualitative comparisons of our results with available observations and find very good agreement. We conclude that this region is complex, since it comprises several stellar components with different properties - I.e. a boxy/peanut bulge, thin and thick disc components, and, to lesser extents, a disky pseudo-bulge, a stellar halo and a small classical bulge - all cohabiting in dynamical equilibrium. Our models show strong links between kinematics and metallicity, or morphology and metallicity, as already suggested by a number of recent observations. We discuss and explain these links.

JASMINE: constructor of the dynamical structure of the Galactic bulge

NASA Astrophysics Data System (ADS)

Gouda, N.; Kobayashi, Y.; Yamada, Y.; Yano, T.; Tsujimoto, T.; Suganuma, M.; Niwa, Y.; Yamauchi, M.

2008-07-01

We introduce a Japanese space astrometry project which is called JASMINE. JASMINE (Japan Astrometry Satellite Mission for INfrared Exploration) will measure distances and tangential motions of stars in the Galactic bulge with yet unprecedented precision. JASMINE will operate in z-band whose central wavelength is 0.9 micron. It will measure parallaxes, positions with accuracy of about 10 micro-arcsec and proper motions with accuracy of about 10 micro- arcsec/year for the stars brighter than z=14 mag. The number of stars observed by JASMINE with high accuracy of parallaxes in the Galactic bulge is much larger than that observed in other space astrometry projects operating in optical bands. With the completely new “map of the Galactic bulge” including motions of bulge stars, we expect that many new exciting scientific results will be obtained in studies of the Galactic bulge. One of them is the construction of the dynamical structure of the Galactic bulge. Kinematics and distance data given by JASMINE are the closest approach to a view of the exact dynamical structure of the Galactic bulge. Presently, JASMINE is in a development phase, with a target launch date around 2016. We comment on the outline of JASMINE mission, scientific targets and a preliminary design of JASMINE in this paper.

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

The Star Formation History in the M31 Bulge

NASA Astrophysics Data System (ADS)

Dong, Hui; Olsen, Knut; Lauer, Tod; Saha, Abhijit; Li, Zhiyuan; García-Benito, Ruben; Schödel, Rainer

2018-05-01

We present the study of stellar populations in the central 5.5' (˜1.2 kpc) of the M31 bulge by using the optical color magnitude diagram derived from HST ACS WFC/HRC observations. In order to enhance image quality and then obtain deeper photometry, we construct Nyquist-sampled images and use a deconvolution method to detect sources and measure their photometry. We demonstrate that our method performs better than DOLPHOT in the extremely crowded region. The resolved stars in the M31 bulge have been divided into nine annuli and the color magnitude diagram fitting is performed for each of them. We confirm that the majority of stars (>70%) in the M31 bulge are indeed very old (> 5 Gyr) and metal-rich ([Fe/H]˜0.3). At later times, the star formation rate decreased and then experienced a significant rise around 1 Gyr ago, which pervaded the entire M31 bulge. After that, stars formed at less than 500 Myr ago in the central 130" . Through simulation, we find that these intermediate-age stars cannot be the artifacts introduced by the blending effect. Our results suggest that although the majority of the M31 bulge are very old, the secular evolutionary process still continuously builds up the M31 bulge slowly. We compare our star formation history with an older analysis derived from the spectral energy distribution fitting, which suggests that the latter one is still a reasonable tool for the study of stellar populations in remote galaxies.

Bulge Region as a Putative Hair Follicle Stem Cells Niche: A Brief Review

PubMed Central

JOULAI VEIJOUYE, Sanaz; YARI, Abazar; HEIDARI, Fatemeh; SAJEDI, Nayereh; GHOROGHI MOGHANI, Fatemeh; NOBAKHT, Maliheh

2017-01-01

Background: Hair follicle stem cells exist in different sites. Most of the hair follicle stem cells are reside in niche called bulge. Bulge region is located between the opening of sebaceous gland and the attachment site of the arrector pili muscle. Methods: Data were collected using databases and resources of PubMed, Web of Science, Science Direct, Scopus, MEDLINE and their references from the earliest available published to identify English observational studies on hair follicle bulge region. Results: Bulge stem cells are pluripotent with high proliferative capacity. Specific markers allow the bulge cells to be isolated from mouse or human hair follicle. Stem cells isolated from bulge region are label retaining and slow cycling hence these cells are defined as label-retaining cells. Bulge cell populations, due to their plasticity nature are able to differentiate into distinct linage and could contribute in tissue regeneration. Conclusion: The current review discuss about bulge stem cells characteristics and biology including their cycle, location, plasticity, specific markers and regenerative nature. Also the differences between mouse and human hair follicles are investigated. PMID:29026781

Control wafer bow of InGaP on 200 mm Si by strain engineering

NASA Astrophysics Data System (ADS)

Wang, Bing; Bao, Shuyu; Made, Riko I.; Lee, Kwang Hong; Wang, Cong; Eng Kian Lee, Kenneth; Fitzgerald, Eugene A.; Michel, Jurgen

2017-12-01

When epitaxially growing III-V compound semiconductors on Si substrates the mismatch of coefficients of thermal expansion (CTEs) between III-V and Si causes stress and wafer bow. The wafer bow is deleterious for some wafer-scale processing especially when the wafer size is large. Strain engineering was applied in the epitaxy of InGaP films on 200 mm silicon wafers having high quality germanium buffers. By applying compressive strain in the InGaP films to compensate the tensile strain induced by CTE mismatch, wafer bow was decreased from about 100 μm to less than 50 μm. X-ray diffraction studies show a clear trend between the decrease of wafer bow and the compensation of CTE mismatch induced tensile strain in the InGaP layers. In addition, the anisotropic strain relaxation in InGaP films resulted in anisotropic wafer bow along two perpendicular (110) directions. Etch pit density and plane-view transmission electron microscopy characterizations indicate that threading dislocation densities did not change significantly due to the lattice-mismatch applied in the InGaP films. This study shows that strain engineering is an effective method to control wafer bow when growing III-V semiconductors on large size Si substrates.

A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

NASA Astrophysics Data System (ADS)

Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

2013-03-01

The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

Recognition of thymine in DNA bulges by a Zn(II) macrocyclic complex.

PubMed

del Mundo, Imee Marie A; Fountain, Matthew A; Morrow, Janet R

2011-08-14

A Zn(II) macrocyclic complex with appended quinoline is a bifunctional recognition agent that uses both the Zn(II) center and the pendent aromatic group to bind to thymine in bulges with good selectivity over DNA containing G, C or A bulges. Spectroscopic studies show that the stem containing the bulge stays largely intact in a DNA hairpin with the Zn(II) complex bound to the thymine bulge. This journal is © The Royal Society of Chemistry 2011

Determination of Material Strengths by Hydraulic Bulge Test.

PubMed

Wang, Hankui; Xu, Tong; Shou, Binan

2016-12-30

The hydraulic bulge test (HBT) method is proposed to determine material tensile strengths. The basic idea of HBT is similar to the small punch test (SPT), but inspired by the manufacturing process of rupture discs-high-pressure hydraulic oil is used instead of punch to cause specimen deformation. Compared with SPT method, the HBT method can avoid some of influence factors, such as punch dimension, punch material, and the friction between punch and specimen. A calculation procedure that is entirely based on theoretical derivation is proposed for estimate yield strength and ultimate tensile strength. Both conventional tensile tests and hydraulic bulge tests were carried out for several ferrous alloys, and the results showed that hydraulic bulge test results are reliable and accurate.

Structural basis for bifunctional zinc(II) macrocyclic complex recognition of thymine bulges in DNA.

PubMed

del Mundo, Imee Marie A; Siters, Kevin E; Fountain, Matthew A; Morrow, Janet R

2012-05-07

The zinc(II) complex of 1-(4-quinoylyl)methyl-1,4,7,10-tetraazacyclododecane (cy4q) binds selectively to thymine bulges in DNA and to a uracil bulge in RNA. Binding constants are in the low-micromolar range for thymine bulges in the stems of hairpins, for a thymine bulge in a DNA duplex, and for a uracil bulge in an RNA hairpin. Binding studies of Zn(cy4q) to a series of hairpins containing thymine bulges with different flanking bases showed that the complex had a moderate selectivity for thymine bulges with neighboring purines. The dissociation constants of the most strongly bound Zn(cy4q)-DNA thymine bulge adducts were 100-fold tighter than similar sequences with fully complementary stems or than bulges containing cytosine, guanine, or adenine. In order to probe the role of the pendent group, three additional zinc(II) complexes containing 1,4,7,10-tetraazacyclododecane (cyclen) with aromatic pendent groups were studied for binding to DNA including 1-(2-quinolyl)methyl-1,4,7,10-tetraazacyclododecane (cy2q), 1-(4-biphenyl)methyl-1,4,7,10-tetraazacyclododecane (cybp), and 5-(1,4,7,10-tetraazacyclododecan-1-ylsulfonyl)-N,N-dimethylnaphthalen-1-amine (dsc). The Zn(cybp) complex binds with moderate affinity but little selectivity to DNA hairpins with thymine bulges and to DNA lacking bulges. Similarly, Zn(dsc) binds weakly both to thymine bulges and hairpins with fully complementary stems. The zinc(II) complex of cy2q has the 2-quinolyl moiety bound to the Zn(II) center, as shown by (1)H NMR spectroscopy and pH-potentiometric titrations. As a consequence, only weak (500 μM) binding is observed to DNA with no appreciable selectivity. An NMR structure of a thymine-bulge-containing hairpin shows that the thymine is extrahelical but rotated toward the major groove. NMR data for Zn(cy4q) bound to DNA containing a thymine bulge is consistent with binding of the zinc(II) complex to the thymine N3(-) and stacking of the quinoline on top of the thymine. The thymine-bulge bound

The gravitational self-interaction of the Earth's tidal bulge

NASA Astrophysics Data System (ADS)

Norsen, Travis; Dreese, Mackenzie; West, Christopher

2017-09-01

According to a standard, idealized analysis, the Moon would produce a 54 cm equilibrium tidal bulge in the Earth's oceans. This analysis omits many factors (beyond the scope of the simple idealized model) that dramatically influence the actual height and timing of the tides at different locations, but it is nevertheless an important foundation for more detailed studies. Here, we show that the standard analysis also omits another factor—the gravitational interaction of the tidal bulge with itself—which is entirely compatible with the simple, idealized equilibrium model and which produces a surprisingly non-trivial correction to the predicted size of the tidal bulge. Our analysis uses ideas and techniques that are familiar from electrostatics, and should thus be of interest to teachers and students of undergraduate E&M, Classical Mechanics (and/or other courses that cover the tides), and geophysics courses that cover the closely related topic of Earth's equatorial bulge.

Sidewall patterning—a new wafer-scale method for accurate patterning of vertical silicon structures

NASA Astrophysics Data System (ADS)

Westerik, P. J.; Vijselaar, W. J. C.; Berenschot, J. W.; Tas, N. R.; Huskens, J.; Gardeniers, J. G. E.

2018-01-01

For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.

Searching for fossil fragments of the Galactic bulge formation process

NASA Astrophysics Data System (ADS)

Ferraro, Francesco

2017-08-01

We have discovered that the stellar system Terzan5 (Ter5) in the Galactic bulge harbors stellar populations with very different IRON content (delta[Fe/H] 1 dex, Ferraro+09, Nature 462, 483) and AGES (12 Gyr and 4.5 Gyr for the sub-solar and super-solar metallicity populations, respectively, Ferraro+16, ApJ,828,75). This evidence demonstrates that Ter5 is not a globular cluster, and identifies it as (1) a site in the Galactic bulge where recent star formation occurred, and (2) the remnant of a massive system able to retain the iron-enriched gas ejected by violent supernova explosions. The striking chemical similarity between Ter5 and the bulge opens the fascinating possibility that we discovered the fossil remnant of a pristine massive structure that could have contributed to the Galactic bulge assembly.Prompted by this finding, here we propose to secure deep HST optical observations for the bulge stellar system Liller1, that shows a similar complexity as Ter5, with evidence of two stellar populations with different iron content. The immediate goal is to properly explore the main sequence turnoff region of the system for unveiling possible splits due to stellar populations of different ages. As demonstrated by our experience with Ter5, the requested HST observations, in combination with the K-band diffraction limited images that we already secured with GeMS-Gemini, are essential to achieve this goal.The project will allow us to establish if other fossil remnants of the bulge formation epoch do exist, thus probing that the merging of pre-evolved massive structures has been an important channel for the formation of the Galactic bulge.

Gauging the Helium Abundance of the Galactic Bulge RR Lyrae Stars

NASA Astrophysics Data System (ADS)

Marconi, Marcella; Minniti, Dante

2018-02-01

We report the first estimate of the He abundance of the population of RR Lyrae stars in the Galactic bulge. This is done by comparing the recent observational data with the latest models. We use the large samples of ab-type RR Lyrae stars found by OGLE IV in the inner bulge and by the VVV survey in the outer bulge. We present the result from the new models computed by Marconi et al., showing that the minimum period for fundamental RR Lyrae pulsators depends on the He content. By comparing these models with the observations in a period versus effective temperature plane, we find that the bulk of the bulge ab-type RR Lyrae are consistent with primordial He abundance Y = 0.245, ruling out a significant He-enriched population. This work demonstrates that the He content of the bulge RR Lyrae is different from that of the bulk of the bulge population as traced by the red clump giants that appear to be significantly more He-rich. Based on observations collected at the European Organisation for Astronomical Research in the Southern Hemisphere under ESO programmes 179.B-2002 and 298.D-5048.

Support apparatus for semiconductor wafer processing

DOEpatents

Griffiths, Stewart K.; Nilson, Robert H.; Torres, Kenneth J.

2003-06-10

A support apparatus for minimizing gravitational stress in semiconductor wafers, and particularly silicon wafers, during thermal processing. The support apparatus comprises two concentric circular support structures disposed on a common support fixture. The two concentric circular support structures, located generally at between 10 and 70% and 70 and 100% and preferably at 35 and 82.3% of the semiconductor wafer radius, can be either solid rings or a plurality of spaced support points spaced apart from each other in a substantially uniform manner. Further, the support structures can have segments removed to facilitate wafer loading and unloading. In order to withstand the elevated temperatures encountered during semiconductor wafer processing, the support apparatus, including the concentric circular support structures and support fixture can be fabricated from refractory materials, such as silicon carbide, quartz and graphite. The claimed wafer support apparatus can be readily adapted for use in either batch or single-wafer processors.

Nonlinear bulging factor based on R-curve data

NASA Technical Reports Server (NTRS)

Jeong, David Y.; Tong, Pin

1994-01-01

In this paper, a nonlinear bulging factor is derived using a strain energy approach combined with dimensional analysis. The functional form of the bulging factor contains an empirical constant that is determined using R-curve data from unstiffened flat and curved panel tests. The determination of this empirical constant is based on the assumption that the R-curve is the same for both flat and curved panels.

Morpho-kinematic properties of field S0 bulges in the CALIFA survey

NASA Astrophysics Data System (ADS)

Méndez-Abreu, J.; Aguerri, J. A. L.; Falcón-Barroso, J.; Ruiz-Lara, T.; Sánchez-Menguiano, L.; de Lorenzo-Cáceres, A.; Costantin, L.; Catalán-Torrecilla, C.; Zhu, L.; Sánchez-Blazquez, P.; Florido, E.; Corsini, E. M.; Wild, V.; Lyubenova, M.; van de Ven, G.; Sánchez, S. F.; Bland-Hawthorn, J.; Galbany, L.; García-Benito, R.; García-Lorenzo, B.; González Delgado, R. M.; López-Sánchez, A. R.; Marino, R. A.; Márquez, I.; Ziegler, B.; Califa Collaboration

2018-02-01

We study a sample of 28 S0 galaxies extracted from the integral field spectroscopic (IFS) survey Calar Alto Legacy Integral Field Area. We combine an accurate two-dimensional (2D) multicomponent photometric decomposition with the IFS kinematic properties of their bulges to understand their formation scenario. Our final sample is representative of S0s with high stellar masses (M⋆/M⊙ > 1010). They lay mainly on the red sequence and live in relatively isolated environments similar to that of the field and loose groups. We use our 2D photometric decomposition to define the size and photometric properties of the bulges, as well as their location within the galaxies. We perform mock spectroscopic simulations mimicking our observed galaxies to quantify the impact of the underlying disc on our bulge kinematic measurements (λ and v/σ). We compare our bulge corrected kinematic measurements with the results from Schwarzschild dynamical modelling. The good agreement confirms the robustness of our results and allows us to use bulge deprojected values of λ and v/σ. We find that the photometric (n and B/T) and kinematic (v/σ and λ) properties of our field S0 bulges are not correlated. We demonstrate that this morpho-kinematic decoupling is intrinsic to the bulges and it is not due to projection effects. We conclude that photometric diagnostics to separate different types of bulges (disc-like versus classical) might not be useful for S0 galaxies. The morpho-kinematics properties of S0 bulges derived in this paper suggest that they are mainly formed by dissipational processes happening at high redshift, but dedicated high-resolution simulations are necessary to better identify their origin.

Stellar populations of bulges in galaxies with a low surface-brightness disc

NASA Astrophysics Data System (ADS)

Morelli, L.; Corsini, E. M.; Pizzella, A.; Dalla Bontà, E.; Coccato, L.; Méndez-Abreu, J.

2015-03-01

The radial profiles of the Hβ, Mg, and Fe line-strength indices are presented for a sample of eight spiral galaxies with a low surface-brightness stellar disc and a bulge. The correlations between the central values of the line-strength indices and velocity dispersion are consistent to those known for early-type galaxies and bulges of high surface-brightness galaxies. The age, metallicity, and α/Fe enhancement of the stellar populations in the bulge-dominated region are obtained using stellar population models with variable element abundance ratios. Almost all the sample bulges are characterized by a young stellar population, on-going star formation, and a solar α/Fe enhancement. Their metallicity spans from high to sub-solar values. No significant gradient in age and α/Fe enhancement is measured, whereas only in a few cases a negative metallicity gradient is found. These properties suggest that a pure dissipative collapse is not able to explain formation of all the sample bulges and that other phenomena, like mergers or acquisition events, need to be invoked. Such a picture is also supported by the lack of a correlation between the central value and gradient of the metallicity in bulges with very low metallicity. The stellar populations of the bulges hosted by low surface-brightness discs share many properties with those of high surface-brightness galaxies. Therefore, they are likely to have common formation scenarios and evolution histories. A strong interplay between bulges and discs is ruled out by the fact that in spite of being hosted by discs with extremely different properties, the bulges of low and high surface-brightness discs are remarkably similar.

Influence of Si wafer thinning processes on (sub)surface defects

NASA Astrophysics Data System (ADS)

Inoue, Fumihiro; Jourdain, Anne; Peng, Lan; Phommahaxay, Alain; De Vos, Joeri; Rebibis, Kenneth June; Miller, Andy; Sleeckx, Erik; Beyne, Eric; Uedono, Akira

2017-05-01

Wafer-to-wafer three-dimensional (3D) integration with minimal Si thickness can produce interacting multiple devices with significantly scaled vertical interconnections. Realizing such a thin 3D structure, however, depends critically on the surface and subsurface of the remaining backside Si after the thinning processes. The Si (sub)surface after mechanical grinding has already been characterized fruitfully for a range of few dozen of μm. Here, we expand the characterization of Si (sub)surface to 5 μm thickness after thinning process on dielectric bonded wafers. The subsurface defects and damage layer were investigated after grinding, chemical mechanical polishing (CMP), wet etching and plasma dry etching. The (sub)surface defects were characterized using transmission microscopy, atomic force microscopy, and positron annihilation spectroscopy. Although grinding provides the fastest removal rate of Si, the surface roughness was not compatible with subsequent processing. Furthermore, mechanical damage such as dislocations and amorphous Si cannot be reduced regardless of Si thickness and thin wafer handling systems. The CMP after grinding showed excellent performance to remove this grinding damage, even though the removal amount is 1 μm. For the case of Si thinning towards 5 μm using grinding and CMP, the (sub)surface is atomic scale of roughness without vacancy. For the case of grinding + dry etch, vacancy defects were detected in subsurface around 0.5-2 μm. The finished surface after wet etch remains in the nm scale in the strain region. By inserting a CMP step in between grinding and dry etch it is possible to significantly reduce not only the roughness, but also the remaining vacancies at the subsurface. The surface of grinding + CMP + dry etching gives an equivalent mono vacancy result as to that of grinding + CMP. This combination of thinning processes allows development of extremely thin 3D integration devices with minimal roughness and vacancy surface.

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

PubMed

Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

2016-05-11

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

Why are classical bulges more common in S0 galaxies than in spiral galaxies?

NASA Astrophysics Data System (ADS)

Mishra, Preetish K.; Wadadekar, Yogesh; Barway, Sudhanshu

2018-05-01

In this paper, we try to understand why the classical bulge fraction observed in S0 galaxies is significantly higher than that in spiral galaxies. We carry out a comparative study of the bulge and global properties of a sample of spiral and S0 galaxies in a fixed environment. Our sample is flux limited and contains 262 spiral and 155 S0 galaxies drawn from the Sloan Digital Sky Survey. We have classified bulges into classical and pseudobulge categories based on their position on the Kormendy diagram. Dividing our sample into bins of galaxy stellar mass, we find that the fraction of S0 galaxies hosting a classical bulge is significantly higher than the classical bulge fraction seen in spirals even at fixed stellar mass. We have compared the bulge and the global properties of spirals and S0 galaxies in our sample and find indications that spiral galaxies which host a classical bulge, preferentially get converted into S0 population as compared to pseudobulge hosting spirals. By studying the star formation properties of our galaxies in the NUV - r color-mass diagram, we find that the pseudobulge hosting spirals are mostly star forming while the majority of classical bulge host spirals are in the green valley or in the passive sequence. We suggest that some internal process, such as AGN feedback or morphological quenching due to the massive bulge, quenches these classical bulge hosting spirals and transforms them into S0 galaxies, thus resulting in the observed predominance of the classical bulge in S0 galaxies.

Wafer characteristics via reflectometry

DOEpatents

Sopori, Bhushan L.

2010-10-19

Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.

Technique and outcomes of laparoscopic bulge repair after abdominal free flap reconstruction.

PubMed

Lee, Johnson C; Whipple, Lauren A; Binetti, Brian; Singh, T Paul; Agag, Richard

2016-01-21

Bulges and hernias after abdominal free flap surgery are uncommon with rates ranging from as low as 0-36%. In the free flap breast reconstruction population, there are no clear guidelines or optimal strategies to treating postoperative bulges. We describe our minimally invasive technique and outcomes in managing bulge complications in abdominal free flap breast reconstruction patients. A retrospective review was performed on all abdominal free flap breast reconstruction patients at Albany Medical Center from 2011 to 2014. All patients with bulges on clinical exam underwent abdominal CT imaging prior to consultation with a minimally invasive surgeon. Confirmed symptomatic bulges were repaired laparoscopically and patients were monitored regularly in the outpatient setting. Sixty-two patients received a total of 80 abdominal free flap breast reconstructions. Flap types included 41 deep inferior epigastric perforator (DIEP), 36 muscle-sparing transverse rectus abdominus myocutaneous (msTRAM), 2 superficial inferior epigastric artery, and 1 transverse rectus abdominus myocutaneous flap. There were a total of 9 (14.5%) bulge complications, with the majority of patients having undergone msTRAM or DIEP reconstruction. There were no complications, revisions, or recurrences from laparoscopic bulge repair after an average follow-up of 181 days. Although uncommon, bulge formation after abdominal free flap reconstruction can create significant morbidity to patients. Laproscopic hernia repair using composite mesh underlay offers an alternative to traditional open hernia repair and can be successfully used to minimize scarring, infection, and pain to free flap patients who have already undergone significant reconstructive procedures. © 2016 Wiley Periodicals, Inc. Microsurgery, 2016. © 2016 Wiley Periodicals, Inc.

Effect of wafer geometry on lithography chucking processes

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Sinha, Jaydeep K.

2015-03-01

Wafer flatness during exposure in lithography tools is critical and is becoming more important as feature sizes in devices shrink. While chucks are used to support and flatten the wafer during exposure, it is essential that wafer geometry be controlled as well. Thickness variations of the wafer and high-frequency wafer shape components can lead to poor flatness of the chucked wafer and ultimately patterning problems, such as defocus errors. The objective of this work is to understand how process-induced wafer geometry, resulting from deposited films with non-uniform stress, can lead to high-frequency wafer shape variations that prevent complete chucking in lithography scanners. In this paper, we discuss both the acceptable limits of wafer shape that permit complete chucking to be achieved, and how non-uniform residual stresses in films, either due to patterning or process non-uniformity, can induce high spatial frequency wafer shape components that prevent chucking. This paper describes mechanics models that relate non-uniform film stress to wafer shape and presents results for two example cases. The models and results can be used as a basis for establishing control strategies for managing process-induced wafer geometry in order to avoid wafer flatness-induced errors in lithography processes.

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

PubMed

Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

2015-10-16

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Low-Temperature Wafer-Scale Deposition of Continuous 2D SnS2 Films.

PubMed

Mattinen, Miika; King, Peter J; Khriachtchev, Leonid; Meinander, Kristoffer; Gibbon, James T; Dhanak, Vin R; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku

2018-04-19

Semiconducting 2D materials, such as SnS 2 , hold immense potential for many applications ranging from electronics to catalysis. However, deposition of few-layer SnS 2 films has remained a great challenge. Herein, continuous wafer-scale 2D SnS 2 films with accurately controlled thickness (2 to 10 monolayers) are realized by combining a new atomic layer deposition process with low-temperature (250 °C) postdeposition annealing. Uniform coating of large-area and 3D substrates is demonstrated owing to the unique self-limiting growth mechanism of atomic layer deposition. Detailed characterization confirms the 1T-type crystal structure and composition, smoothness, and continuity of the SnS 2 films. A two-stage deposition process is also introduced to improve the texture of the films. Successful deposition of continuous, high-quality SnS 2 films at low temperatures constitutes a crucial step toward various applications of 2D semiconductors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wafer-scale fabrication of polymer-based microdevices via injection molding and photolithographic micropatterning protocols.

PubMed

Lee, Dae-Sik; Yang, Haesik; Chung, Kwang-Hyo; Pyo, Hyeon-Bong

2005-08-15

Because of their broad applications in biomedical analysis, integrated, polymer-based microdevices incorporating micropatterned metallic and insulating layers are significant in contemporary research. In this study, micropatterns for temperature sensing and microelectrode sets for electroanalysis have been implemented on an injection-molded thin polymer membrane by employing conventional semiconductor processing techniques (i.e., standard photolithographic methods). Cyclic olefin copolymer (COC) is chosen as the polymer substrate because of its high chemical and thermal stability. A COC 5-in. wafer (1-mm thickness) is manufactured using an injection molding method, in which polymer membranes (approximately 130 microm thick and 3 mm x 6 mm in area) are implemented simultaneously in order to reduce local thermal mass around micropatterned heaters and temperature sensors. The highly polished surface (approximately 4 nm within 40 microm x 40 microm area) of the fabricated COC wafer as well as its good resistance to typical process chemicals makes it possible to use the standard photolithographic and etching protocols on the COC wafer. Gold micropatterns with a minimum 5-microm line width are fabricated for making microheaters, temperature sensors, and microelectrodes. An insulating layer of aluminum oxide (Al2O3) is prepared at a COC-endurable low temperature (approximately 120 degrees C) by using atomic layer deposition and micropatterning for the electrode contacts. The fabricated microdevice for heating and temperature sensing shows improved performance of thermal isolation, and microelectrodes display good electrochemical performances for electrochemical sensors. Thus, this novel 5-in. wafer-level microfabrication method is a simple and cost-effective protocol to prepare polymer substrate and demonstrates good potential for application to highly integrated and miniaturized biomedical devices.

Carbon dioxide capture using resin-wafer electrodeionization

DOEpatents

Lin, YuPo J.; Snyder, Seth W.; Trachtenberg, Michael S.; Cowan, Robert M.; Datta, Saurav

2015-09-08

The present invention provides a resin-wafer electrodeionization (RW-EDI) apparatus including cathode and anode electrodes separated by a plurality of porous solid ion exchange resin wafers, which when in use are filled with an aqueous fluid. The apparatus includes one or more wafers comprising a basic ion exchange medium, and preferably includes one or more wafers comprising an acidic ion exchange medium. The wafers are separated from one another by ion exchange membranes. The fluid within the acidic and/or basic ion exchange wafers preferably includes, or is in contact with, a carbonic anhydrase (CA) enzyme to facilitate conversion of bicarbonate ion to carbon dioxide within the acidic medium. A pH suitable for exchange of CO.sub.2 is electrochemically maintained within the basic and acidic ion exchange wafers by applying an electric potential across the cathode and anode.

Methane production using resin-wafer electrodeionization

DOEpatents

Snyder, Seth W; Lin, YuPo; Urgun-Demirtas, Meltem

2014-03-25

The present invention provides an efficient method for creating natural gas including the anaerobic digestion of biomass to form biogas, and the electrodeionization of biogas to form natural gas and carbon dioxide using a resin-wafer deionization (RW-EDI) system. The method may be further modified to include a wastewater treatment system and can include a chemical conditioning/dewatering system after the anaerobic digestion system. The RW-EDI system, which includes a cathode and an anode, can either comprise at least one pair of wafers, each a basic and acidic wafer, or at least one wafer comprising of a basic portion and an acidic portion. A final embodiment of the RW-EDI system can include only one basic wafer for creating natural gas.

Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

PubMed

Heo, Jinseong; Byun, Kyung-Eun; Lee, Jaeho; Chung, Hyun-Jong; Jeon, Sanghun; Park, Seongjun; Hwang, Sungwoo

2013-01-01

Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.

Quantitative analysis of the extensional tectonics of Tharsis bulge, Mars - Geodynamic implications

NASA Astrophysics Data System (ADS)

Thomas, P. G.; Allemand, P.

1993-07-01

The amount of horizontal strain on the Martian Tharsis bulge is quantified in order to provide further information on the tectonic evolution of this province. About 10 percent of the Tharsis surface bulge exhibits elliptical impact craters, which are the largest strain markers in the solar system. It is shown that these strain ellipses indicate more strain than could be due to the bulge building alone. The existence of such intensely deformed areas, the direction of the extensive strain, the localization of these areas on the bulge crest or on the top of topographic slopes, and the evidence of nonthinned crust under these areas may all be explained by gravitational slidings of the bulge surface over the topographic slope. This sliding would be possible because of the presence of a decollement level two kilometers below the surface, and because of the prefracturation which have made the detachment possible.

The Black Hole Mass-Bulge Luminosity Relationship for Reverberation- Mapped AGNs in the Near-IR

NASA Astrophysics Data System (ADS)

Manne-Nicholas, Emily R.; Bentz, Misty C.

2013-02-01

We propose to use WHIRC on WIYN to obtain high spatial resolution near-IR images of the remaining host galaxies in our sample of reverberation-mapped AGNs in order to study the effect of host-galaxy morphology on the M_BH-L_bulge scaling relationship. Recent studies of the M_BH-sigma_star relationship, which is based on the stellar and gas-dynamical sample of black hole masses, have uncovered a possible offset in the relationship due to the presence of a pseudobulge or bar in the host galaxy. This offset would adversely affect ones ability to use the M_BH-sigma_star relationship as a way to estimate black hole masses efficiently because it would require the detailed morphology of the galaxy to be known it a priori. Preliminary results based on optical HST data suggest that the M_BH-L_bulge is not plagued by this same offset. However, due to dust and on-going star formation, the optical data yield an M_BH-L_bulge relationship with a slightly higher scatter. WHIRC near-IR imaging is essential to minimize the effects of dust and star formation in order to confirm the M_BH-L_bulge relationship as a more accurate predictor of black hole masses and a potentially more fundamental relationship, thus informing our understanding of black hole and galaxy co-evolution across cosmic time. emphThe proposed observations will comprise a significant portion of the PI's PhD thesis.

An asymmetric mesoscopic model for single bulges in RNA

NASA Astrophysics Data System (ADS)

de Oliveira Martins, Erik; Weber, Gerald

2017-10-01

Simple one-dimensional DNA or RNA mesoscopic models are of interest for their computational efficiency while retaining the key elements of the molecular interactions. However, they only deal with perfectly formed DNA or RNA double helices and consider the intra-strand interactions to be the same on both strands. This makes it difficult to describe highly asymmetric structures such as bulges and loops and, for instance, prevents the application of mesoscopic models to determine RNA secondary structures. Here we derived the conditions for the Peyrard-Bishop mesoscopic model to overcome these limitations and applied it to the calculation of single bulges, the smallest and simplest of these asymmetric structures. We found that these theoretical conditions can indeed be applied to any situation where stacking asymmetry needs to be considered. The full set of parameters for group I RNA bulges was determined from experimental melting temperatures using an optimization procedure, and we also calculated average opening profiles for several RNA sequences. We found that guanosine bulges show the strongest perturbation on their neighboring base pairs, considerably reducing the on-site interactions of their neighboring base pairs.

Tracing the evolution of the Galactic bulge with chemodynamical modelling of alpha-elements

NASA Astrophysics Data System (ADS)

Friaça, A. C. S.; Barbuy, B.

2017-02-01

Context. Galactic bulge abundances can be best understood as indicators of bulge formation and nucleosynthesis processes by comparing them with chemo-dynamical evolution models. Aims: The aim of this work is to study the abundances of alpha-elements in the Galactic bulge, including a revision of the oxygen abundance in a sample of 56 bulge red giants. Methods: Literature abundances for O, Mg, Si, Ca and Ti in Galactic bulge stars are compared with chemical evolution models. For oxygen in particular, we reanalysed high-resolution spectra obtained using FLAMES+UVES on the Very Large Telescope, now taking each star's carbon abundances, derived from CI and C2 lines, into account simultaneously. Results: We present a chemical evolution model of alpha-element enrichment in a massive spheroid that represents a typical classical bulge evolution. The code includes multi-zone chemical evolution coupled with hydrodynamics of the gas. Comparisons between the model predictions and the abundance data suggest a typical bulge formation timescale of 1-2 Gyr. The main constraint on the bulge evolution is provided by the O data from analyses that have taken the C abundance and dissociative equilibrium into account. Mg, Si, Ca and Ti trends are well reproduced, whereas the level of overabundance critically depends on the adopted nucleosynthesis prescriptions. Observations collected both at the European Southern Observatory, Paranal, Chile (ESO programmes 71.B-0617A, 73.B0074A, and GTO 71.B-0196)

Opening the Window on Galaxy Assembly: Ages and Structural Parameters of Globular Clusters Towards the Galactic Bulge

NASA Astrophysics Data System (ADS)

Cohen, Roger

2015-10-01

The primary aim of this program is to undertake a systematic investigation of highly reddened Galactic globular clusters (GGCs) located towards the Galactic bulge. These clusters have been excluded from deep space-based photometric surveys due to their severe total and differential extinction. We will exploit the photometric depth and homogeneity of two existing Treasury programs (the ACS GGC Treasury Survey and the WFC3 Bulge Treasury Program) along with the unique optical+IR parallel imaging capabilities of HST to finally place the bulge GGCs in the context of their optically well-studied counterparts. Specifically, by leveraging ACS/WFC together with WFC3/IR, we first exploit the reddening sensitivity at optical wavelengths to map severe, small-scale differential reddening in the cluster cores. Corrected two-color WFC3/IR photometry will then be used to measure cluster ages to better than 1 Gyr relative precision, finally completing the age-metallicity relation of the Milky Way GGC system. Ages are obtained using a demonstrated procedure which is strictly differential, and therefore insensitive to total distance, reddening, reddening law, or photometric calibration uncertainties. At the same time, deep archival Treasury survey imaging of the Galactic bulge will be used to decontaminate cluster luminosity functions, yielding measurements of bulge GGC mass functions and mass segregation on par with results from the ACS GGC Treasury survey. Finally, the imaging which we propose will be combined with existing wide-field near-IR PSF photometry, yielding complete radial number density profiles, structural and morphological parameters.

Advances in process overlay on 300-mm wafers

NASA Astrophysics Data System (ADS)

Staecker, Jens; Arendt, Stefanie; Schumacher, Karl; Mos, Evert C.; van Haren, Richard J. F.; van der Schaar, Maurits; Edart, Remi; Demmerle, Wolfgang; Tolsma, Hoite

2002-07-01

Overlay budgets are getting tighter within 300 mm volume production and as a consequence the process effects on alignment and off-line metrology becomes more important. In a short loop experiment, with cleared reference marks in each image field, the isolated effect of processing was measured with a sub-nanometer accuracy. The examined processes are Shallow Trench Isolation (STI), Tungsten-Chemical Mechanical Processing (W-CMP) and resist spinning. The alignment measurements were done on an ASML TWINSCANT scanner and the off-line metrology measurements on a KLA Tencor. Mark type and mark position dependency of the process effects are analyzed. The mean plus 3 (sigma) of the maximum overlay after correcting batch average wafer parameters is used as an overlay performance indicator (OPI). 3 (sigma) residuals to the wafer-model are used as an indicator of the noise that is added by the process. The results are in agreement with existing knowledge of process effects on 200 mm wafers. The W-CMP process introduces an additional wafer rotation and scaling that is similar for alignment marks and metrology targets. The effects depend on the mark type; in general they get less severe for higher spatial frequencies. For a 7th order alignment mark, the OPI measured about 12 nm and the added noise about 12 nm. For the examined metrology targets the OPI is about 20 nm with an added noise of about 90 nm. Two different types of alignment marks were tested in the STI process, i.e., zero layer marks and marks that were exposed together with the STI product. The overlay contribution due to processing on both types of alignment marks is very low (smaller than 5 nm OPI) and independent on mark type. Some flyers are observed fot the zero layer marks. The flyers can be explained by the residues of oxide and nitride that is left behind in the spaces of the alignment marks. Resist spinning is examined on single layer resist and resist with an organic Bottom Anti-Reflective Coating (BARC

A HIGH-VELOCITY BULGE RR LYRAE VARIABLE ON A HALO-LIKE ORBIT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunder, Andrea; Storm, J.; Rich, R. M.

2015-07-20

We report on the RR Lyrae variable star, MACHO 176.18833.411, located toward the Galactic bulge and observed within the data from the ongoing Bulge RR Lyrae Radial Velocity Assay, which has the unusual radial velocity of −372 ± 8 km s{sup −1} and true space velocity of −482 ± 22 km s{sup −1} relative to the Galactic rest frame. Located less than 1 kpc from the Galactic center and toward a field at (l, b) = (3, −2.5), this pulsating star has properties suggesting it belongs to the bulge RR Lyrae star population, yet a velocity indicating it is abnormal,more » at least with respect to bulge giants and red clump stars. We show that this star is most likely a halo interloper and therefore suggest that halo contamination is not insignificant when studying metal-poor stars found within the bulge area, even for stars within 1 kpc of the Galactic center. We discuss the possibility that MACHO 176.18833.411 is on the extreme edge of the bulge RR Lyrae radial velocity distribution, and also consider a more exotic scenario in which it is a runaway star moving through the Galaxy.« less

Chemically Dissected Rotation Curves of the Galactic Bulge from Main-sequence Proper Motions

NASA Astrophysics Data System (ADS)

Clarkson, William I.; Calamida, Annalisa; Sahu, Kailash C.; Brown, Thomas M.; Gennaro, Mario; Avila, Roberto J.; Valenti, Jeff; Debattista, Victor P.; Rich, R. Michael; Minniti, Dante; Zoccali, Manuela; Aufdemberge, Emily R.

2018-05-01

We report results from an exploratory study implementing a new probe of Galactic evolution using archival Hubble Space Telescope imaging observations. Precise proper motions are combined with photometric relative metallicity and temperature indices, to produce the proper-motion rotation curves of the Galactic bulge separately for metal-poor and metal-rich main-sequence samples. This provides a “pencil-beam” complement to large-scale wide-field surveys, which to date have focused on the more traditional bright giant branch tracers. We find strong evidence that the Galactic bulge rotation curves drawn from “metal-rich” and “metal-poor” samples are indeed discrepant. The “metal-rich” sample shows greater rotation amplitude and a steeper gradient against line-of-sight distance, as well as possibly a stronger central concentration along the line of sight. This may represent a new detection of differing orbital anisotropy between metal-rich and metal-poor bulge objects. We also investigate selection effects that would be implied for the longitudinal proper-motion cut often used to isolate a “pure-bulge” sample. Extensive investigation of synthetic stellar populations suggests that instrumental and observational artifacts are unlikely to account for the observed rotation curve differences. Thus, proper-motion-based rotation curves can be used to probe chemodynamical correlations for main-sequence tracer stars, which are orders of magnitude more numerous in the Galactic bulge than the bright giant branch tracers. We discuss briefly the prospect of using this new tool to constrain detailed models of Galactic formation and evolution. Based on observations made with the NASA/ESA Hubble Space Telescope and obtained from the data archive at the Space Telescope Science Institute. STScI is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555.

Interferometric thickness calibration of 300 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Quandou; Griesmann, Ulf; Polvani, Robert

2005-12-01

The "Improved Infrared Interferometer" (IR 3) at the National Institute of Standards and Technology (NIST) is a phase-measuring interferometer, operating at a wavelength of 1550 nm, which is being developed for measuring the thickness and thickness variation of low-doped silicon wafers with diameters up to 300 mm. The purpose of the interferometer is to produce calibrated silicon wafers, with a certified measurement uncertainty, which can be used as reference wafers by wafer manufacturers and metrology tool manufacturers. We give an overview of the design of the interferometer and discuss its application to wafer thickness measurements. The conversion of optical thickness, as measured by the interferometer, to the wafer thickness requires knowledge of the refractive index of the material of the wafer. We describe a method for measuring the refractive index which is then used to establish absolute thickness and thickness variation maps for the wafer.

Numerical Simulation of Bulging Deformation for Wide-Thick Slab Under Uneven Cooling Conditions

NASA Astrophysics Data System (ADS)

Wu, Chenhui; Ji, Cheng; Zhu, Miaoyong

2018-06-01

In the present work, the bulging deformation of a wide-thick slab under uneven cooling conditions was studied using finite element method. The non-uniform solidification was first calculated using a 2D heat transfer model. The thermal material properties were derived based on a microsegregation model, and the water flux distribution was measured and applied to calculate the cooling boundary conditions. Based on the solidification results, a 3D bulging model was established. The 2D heat transfer model was verified by the measured shell thickness and the slab surface temperature, and the 3D bulging model was verified by the calculated maximum bulging deflections using formulas. The bulging deformation behavior of the wide-thick slab under uneven cooling condition was then determined, and the effect of uneven solidification, casting speed, and roll misalignment were investigated.

Numerical Simulation of Bulging Deformation for Wide-Thick Slab Under Uneven Cooling Conditions

NASA Astrophysics Data System (ADS)

Wu, Chenhui; Ji, Cheng; Zhu, Miaoyong

2018-02-01

In the present work, the bulging deformation of a wide-thick slab under uneven cooling conditions was studied using finite element method. The non-uniform solidification was first calculated using a 2D heat transfer model. The thermal material properties were derived based on a microsegregation model, and the water flux distribution was measured and applied to calculate the cooling boundary conditions. Based on the solidification results, a 3D bulging model was established. The 2D heat transfer model was verified by the measured shell thickness and the slab surface temperature, and the 3D bulging model was verified by the calculated maximum bulging deflections using formulas. The bulging deformation behavior of the wide-thick slab under uneven cooling condition was then determined, and the effect of uneven solidification, casting speed, and roll misalignment were investigated.

Two Populations of SiO Masers in the Galactic Bulge

NASA Astrophysics Data System (ADS)

Trapp, Adam; Rich, Robert Michael; Morris, Mark; Pihlstrom, Ylva; Sjouwerman, Lorant; Claussen, Mark J.; Stroh, Michael

2017-01-01

We present a summary of the kinematics of stellar SiO masers observed in the direction of the galactic bulge with ALMA (885 sources), and the JVLA (2,479 sources). These objects are selected by color from the MSX point source catalog, which has given an SiO detection rate of ~70%. The presented sample, along with the ~24,000 sources still being observed and reduced, enable radial velocity measurements even in regions with extreme optical extinction. These maser stars are compared to the known bulge surveys: APOGEE (~25,000 sources), BRAVA (~8000 sources), and GIBS (~6,400 sources). We have found that BAaDE stars in the direction of the bulge exist in two subpopulations: (1) A kinematically hot population exhibiting cylindrical rotation consistent with the other bulge surveys, and (2) a kinematically cold population more consistent with a disk population. In the ALMA data, we find evidence for a -200 km/s feature at (l,b) = (-9,0), possibly the symmetric complement to a previously proposed +200 km/s feature (Nidever 2012), that we do not confirm with our data.

Temperature Dependent Electrical Properties of PZT Wafer

NASA Astrophysics Data System (ADS)

Basu, T.; Sen, S.; Seal, A.; Sen, A.

2016-04-01

The electrical and electromechanical properties of lead zirconate titanate (PZT) wafers were investigated and compared with PZT bulk. PZT wafers were prepared by tape casting technique. The transition temperature of both the PZT forms remained the same. The transition from an asymmetric to a symmetric shape was observed for PZT wafers at higher temperature. The piezoelectric coefficient (d 33) values obtained were 560 pc/N and 234 pc/N, and the electromechanical coupling coefficient (k p) values were 0.68 and 0.49 for bulk and wafer, respectively. The reduction in polarization after fatigue was only ~3% in case of PZT bulk and ~7% for PZT wafer.

METALLICITY GRADIENTS THROUGH DISK INSTABILITY: A SIMPLE MODEL FOR THE MILKY WAY'S BOXY BULGE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Valpuesta, Inma; Gerhard, Ortwin, E-mail: imv@mpe.mpg.de, E-mail: gerhard@mpe.mpg.de

2013-03-20

Observations show a clear vertical metallicity gradient in the Galactic bulge, which is often taken as a signature of dissipative processes in the formation of a classical bulge. Various evidence shows, however, that the Milky Way is a barred galaxy with a boxy bulge representing the inner three-dimensional part of the bar. Here we show with a secular evolution N-body model that a boxy bulge formed through bar and buckling instabilities can show vertical metallicity gradients similar to the observed gradient if the initial axisymmetric disk had a comparable radial metallicity gradient. In this framework, the range of metallicities inmore » bulge fields constrains the chemical structure of the Galactic disk at early times before bar formation. Our secular evolution model was previously shown to reproduce inner Galaxy star counts and we show here that it also has cylindrical rotation. We use it to predict a full mean metallicity map across the Galactic bulge from a simple metallicity model for the initial disk. This map shows a general outward gradient on the sky as well as longitudinal perspective asymmetries. We also briefly comment on interpreting metallicity gradient observations in external boxy bulges.« less

Porous solid ion exchange wafer for immobilizing biomolecules

DOEpatents

Arora, Michelle B.; Hestekin, Jamie A.; Lin, YuPo J.; St. Martin, Edward J.; Snyder, Seth W.

2007-12-11

A porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer. Also disclosed is a porous solid ion exchange wafer having a combination of a biomolecule capture-resin and an ion-exchange resin forming a charged capture resin within said wafer containing a biomolecule with a tag. A separate bioreactor is also disclosed incorporating the wafer described above.

K-band observations of boxy bulges - I. Morphology and surface brightness profiles

NASA Astrophysics Data System (ADS)

Bureau, M.; Aronica, G.; Athanassoula, E.; Dettmar, R.-J.; Bosma, A.; Freeman, K. C.

2006-08-01

In this first paper of a series on the structure of boxy and peanut-shaped (B/PS) bulges, Kn-band observations of a sample of 30 edge-on spiral galaxies are described and discussed. Kn-band observations best trace the dominant luminous galactic mass and are minimally affected by dust. Images, unsharp-masked images, as well as major-axis and vertically summed surface brightness profiles are presented and discussed. Galaxies with a B/PS bulge tend to have a more complex morphology than galaxies with other bulge types, more often showing centred or off-centred X structures, secondary maxima along the major-axis and spiral-like structures. While probably not uniquely related to bars, those features are observed in three-dimensional N-body simulations of barred discs and may trace the main bar orbit families. The surface brightness profiles of galaxies with a B/PS bulge are also more complex, typically containing three or more clearly separated regions, including a shallow or flat intermediate region (Freeman Type II profiles). The breaks in the profiles offer evidence for bar-driven transfer of angular momentum and radial redistribution of material. The profiles further suggest a rapid variation of the scaleheight of the disc material, contrary to conventional wisdom but again as expected from the vertical resonances and instabilities present in barred discs. Interestingly, the steep inner region of the surface brightness profiles is often shorter than the isophotally thick part of the galaxies, itself always shorter than the flat intermediate region of the profiles. The steep inner region is also much more prominent along the major-axis than in the vertically summed profiles. Similarly to other recent work but contrary to the standard `bulge + disc' model (where the bulge is both thick and steep), we thus propose that galaxies with a B/PS bulge are composed of a thin concentrated disc (a disc-like bulge) contained within a partially thick bar (the B/PS bulge), itself

Structure and hydrodynamics of a DNA G-quadruplex with a cytosine bulge.

PubMed

Meier, Markus; Moya-Torres, Aniel; Krahn, Natalie J; McDougall, Matthew D; Orriss, George L; McRae, Ewan K S; Booy, Evan P; McEleney, Kevin; Patel, Trushar R; McKenna, Sean A; Stetefeld, Jörg

2018-06-01

The identification of four-stranded G-quadruplexes (G4s) has highlighted the fact that DNA has additional spatial organisations at its disposal other than double-stranded helices. Recently, it became clear that the formation of G4s is not limited to the traditional G3+NL1G3+NL2G3+NL3G3+ sequence motif. Instead, the G3 triplets can be interrupted by deoxythymidylate (DNA) or uridylate (RNA) where the base forms a bulge that loops out from the G-quadruplex core. Here, we report the first high-resolution X-ray structure of a unique unimolecular DNA G4 with a cytosine bulge. The G4 forms a dimer that is stacked via its 5'-tetrads. Analytical ultracentrifugation, static light scattering and small angle X-ray scattering confirmed that the G4 adapts a predominantly dimeric structure in solution. We provide a comprehensive comparison of previously published G4 structures containing bulges and report a special γ torsion angle range preferentially populated by the G4 core guanylates adjacent to bulges. Since the penalty for introducing bulges appears to be negligible, it should be possible to functionalize G4s by introducing artificial or modified nucleotides at such positions. The presence of the bulge alters the surface of the DNA, providing an opportunity to develop drugs that can specifically target individual G4s.

YOUNG STARS IN AN OLD BULGE: A NATURAL OUTCOME OF INTERNAL EVOLUTION IN THE MILKY WAY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ness, M.; Debattista, Victor P.; Cole, D. R.

2014-06-01

The center of our disk galaxy, the Milky Way, is dominated by a boxy/peanut-shaped bulge. Numerous studies of the bulge based on stellar photometry have concluded that the bulge stars are exclusively old. The perceived lack of young stars in the bulge strongly constrains its likely formation scenarios, providing evidence that the bulge is a unique population that formed early and separately from the disk. However, recent studies of individual bulge stars using the microlensing technique have reported that they span a range of ages, emphasizing that the bulge may not be a monolithic structure. In this Letter we demonstratemore » that the presence of young stars that are located predominantly nearer to the plane is expected for a bulge that has formed from the disk via dynamical instabilities. Using an N-body+ smoothed particle hydrodynamics simulation of a disk galaxy forming out of gas cooling inside a dark matter halo and forming stars, we find a qualitative agreement between our model and the observations of younger metal-rich stars in the bulge. We are also able to partially resolve the apparent contradiction in the literature between results that argue for a purely old bulge population and those that show a population comprised of a range in ages; the key is where to look.« less

ALMA observations of molecular absorption in four directions toward the Galactic bulge

NASA Astrophysics Data System (ADS)

Liszt, H.; Gerin, M.

2018-02-01

Context. Alma Cycle 3 observations serendipitously showed strong absorption from diffuse molecular gas in the Galactic bulge at -200 km s-1 < v < -140 km s-1 toward the compact extragalactic continuum source J1744-3116 at (l, b) = -2.13∘, - 1.00∘. Aims: We aimed to test whether molecular gas in the bulge could also be detected toward the three other, sufficiently strong mm-wave continuum sources seen toward the bulge at |b| < 3∘. Methods: We took absorption profiles of HCO+ (1-0), HCN(1-0), C2H(1-0), CS(2-1) and H13CO+(1-0) in ALMA Cycle 4 toward J1713-3418, J1717-3341, J1733-3722 and J1744-3116. Results: Strong molecular absorption from disk gas at |ν| ≲ 30 km s-1 was detected in all directions, and absorption from the 3 kpc arm was newly detected toward J1717 and J1744. However, only the sightline toward J1744 is dominated by molecular gas overall and no other sightlines showed molecular absorption from gas deep inside the bulge. No molecular absorption was detected toward J1717 where H I emission from the bulge was previously known. As observed in HCO+, HCN, C2H and CS, the bulge gas toward J1744 at v < -135 km s-1 has chemistry and kinematics like that seen near the Sun and in the Milky Way disk generally. We measured isotopologic ratios N(HCO+)/N(H13CO+) > 51(3σ) for the bulge gas toward J1744 and 58 ± 9 and 64 ± 4 for the disk gas toward J1717 and J1744, respectively, all well above the value of 20-25 typical of the central molecular zone. Conclusions: The kinematics and chemistry of the bulge gas observed toward J1744 more nearly resemble that of gas in the Milky Way disk than in the central molecular zone.

Disc extrusions and bulges in nonspecific low back pain and sciatica: Exploratory randomised controlled trial comparing yoga therapy and normal medical treatment.

PubMed

Monro, Robin; Bhardwaj, Abhishek Kumar; Gupta, Ram Kumar; Telles, Shirley; Allen, Beth; Little, Paul

2015-01-01

Previous trials of yoga therapy for nonspecific low back pain (nsLBP) (without sciatica) showed beneficial effects. To test effects of yoga therapy on pain and disability associated with lumbar disc extrusions and bulges. Parallel-group, randomised, controlled trial. Sixty-one adults from rural population, aged 20-45, with nsLBP or sciatica, and disc extrusions or bulges. Randomised to yoga (n=30) and control (n=31). Yoga: 3-month yoga course of group classes and home practice, designed to ensure safety for disc extrusions. normal medical care. OUTCOME MEASURES (3-4 months) Primary: Roland Morris Disability Questionnaire (RMDQ); worst pain in past two weeks. Secondary: Aberdeen Low Back Pain Scale; straight leg raise test; structural changes. Disc projections per case ranged from one bulge or one extrusion to three bulges plus two extrusions. Sixty-two percent had sciatica. Intention-to-treat analysis of the RMDQ data, adjusted for age, sex and baseline RMDQ scores, gave a Yoga Group score 3.29 points lower than Control Group (0.98, 5.61; p=0.006) at 3 months. No other significant differences in the endpoints occurred. No adverse effects of yoga were reported. Yoga therapy can be safe and beneficial for patients with nsLBP or sciatica, accompanied by disc extrusions and bulges.

A combined photometric and kinematic recipe for evaluating the nature of bulges using the CALIFA sample

NASA Astrophysics Data System (ADS)

Neumann, J.; Wisotzki, L.; Choudhury, O. S.; Gadotti, D. A.; Walcher, C. J.; Bland-Hawthorn, J.; García-Benito, R.; González Delgado, R. M.; Husemann, B.; Marino, R. A.; Márquez, I.; Sánchez, S. F.; Ziegler, B.; Califa Collaboration

2017-07-01

Understanding the nature of bulges in disc galaxies can provide important insights into the formation and evolution of galaxies. For instance, the presence of a classical bulge suggests a relatively violent history. In contrast, the presence of an inner disc instead (also referred to as a "pseudobulge") indicates the occurrence of secular evolution processes in the main disc. However, we still lack criteria to effectively categorise bulges, limiting our ability to study their impact on the evolution of the host galaxies. Here we present a recipe to separate inner discs from classical bulges by combining four different parameters from photometric and kinematic analyses: the bulge Sérsic index nb, the concentration index C20,50, the Kormendy (1977, ApJ, 217, 406) relation and the inner slope of the radial velocity dispersion profile ∇σ. With that recipe we provide a detailed bulge classification for a sample of 45 galaxies from the integral-field spectroscopic survey CALIFA. To aid in categorising bulges within these galaxies, we perform 2D image decomposition to determine bulge Sérsic index, bulge-to-total light ratio, surface brightness and effective radius of the bulge and use growth curve analysis to derive a new concentration index, C20,50. We further extract the stellar kinematics from CALIFA data cubes and analyse the radial velocity dispersion profile. The results of the different approaches are in good agreement and allow a safe classification for approximately 95% of the galaxies. In particular, we show that our new "inner" concentration index performs considerably better than the traditionally used C50,90 when yielding the nature of bulges. We also found that a combined use of this index and the Kormendy relation gives a very robust indication of the physical nature of the bulge.

Establishing the connection between peanut-shaped bulges and galactic bars

NASA Technical Reports Server (NTRS)

Kuijken, Konrad; Merrifield, Michael R.

1995-01-01

It has been suggested that the peanut-shaped bulges seen in some edge-on disk galaxies are due to the presence of a central bar. Although bars cannot be detected photometrically in edge-on galaxies, we show that barred potentials produce a strong kinematic signature in the form of double-peaked line-of-sight velocity distributions with a characteristic 'figure-of-eight' variation with radius. We have obtained spectroscopic observations of two edge-on galaxies with peanut-shaped bulges (NGC 5746 and NGC 5965), and they reveal exactly such line-of-sight velocity distributions in both their gaseous (emission line) and their stellar (absorption line) components. These observations provide strong observational evidence that peanut-shaped bulges are a by-product of bar formation.

MACHO RR Lyrae in the Inner Halo and Bulge

NASA Astrophysics Data System (ADS)

Minniti, Dante; Alcock, Charles; Allsman, Robyn A.; Alves, David; Axelrod, Tim S.; Becker, Andrew C.; Bennett, David; Cook, Kem H.; Drake, Andrew J.; Freeman, Ken C.; Griest, Kim; Lehner, Matt; Marshall, Stuart; Peterson, Bruce; Pratt, Mark; Quinn, Peter; Rodgers, Alex; Stubbs, Chris; Sutherland, Will; Tomaney, Austin; Vandehei, Thor; Welch, Doug L.

The RR Lyrae in the bulge have been proposed to be the oldest populations in the Milky Way, tracers of how the galaxy formed. We study here the distribution of ~1600 bulge RR Lyrae stars found by the MACHO Project. The RR Lyrae with Galactocentric radius 0.4

Influence of Wafer Edge Geometry on Removal Rate Profile in Chemical Mechanical Polishing: Wafer Edge Roll-Off and Notch

NASA Astrophysics Data System (ADS)

Fukuda, Akira; Fukuda, Tetsuo; Fukunaga, Akira; Tsujimura, Manabu

2012-05-01

In the chemical mechanical polishing (CMP) process, uniform polishing up to near the wafer edge is essential to reduce edge exclusion and improve yield. In this study, we examine the influences of inherent wafer edge geometries, i.e., wafer edge roll-off and notch, on the CMP removal rate profile. We clarify the areas in which the removal rate profile is affected by the wafer edge roll-off and the notch, as well as the intensity of their effects on the removal rate profile. In addition, we propose the use of a small notch to reduce the influence of the wafer notch and present the results of an examination by finite element method (FEM) analysis.

Bulge growth and quenching since z = 2.5 in CANDELS/3D-HST

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lang, Philipp; Wuyts, Stijn; Schreiber, Natascha M. Förster

2014-06-10

Exploiting the deep high-resolution imaging of all five CANDELS fields, and accurate redshift information provided by 3D-HST, we investigate the relation between structure and stellar populations for a mass-selected sample of 6764 galaxies above 10{sup 10} M {sub ☉}, spanning the redshift range 0.5 < z < 2.5. For the first time, we fit two-dimensional models comprising a single Sérsic fit and two-component (i.e., bulge + disk) decompositions not only to the H-band light distributions, but also to the stellar mass maps reconstructed from resolved stellar population modeling. We confirm that the increased bulge prominence among quiescent galaxies, as reportedmore » previously based on rest-optical observations, remains in place when considering the distributions of stellar mass. Moreover, we observe an increase of the typical Sérsic index and bulge-to-total ratio (with median B/T reaching 40%-50%) among star-forming galaxies above 10{sup 11} M {sub ☉}. Given that quenching for these most massive systems is likely to be imminent, our findings suggest that significant bulge growth precedes a departure from the star-forming main sequence. We demonstrate that the bulge mass (and ideally knowledge of the bulge and total mass) is a more reliable predictor of the star-forming versus quiescent state of a galaxy than the total stellar mass. The same trends are predicted by the state-of-the-art, semi-analytic model by Somerville et al. In this model, bulges and black holes grow hand in hand through merging and/or disk instabilities, and feedback from active galactic nuclei shuts off star formation. Further observations will be required to pin down star formation quenching mechanisms, but our results imply that they must be internal to the galaxies and closely associated with bulge growth.« less

Bulge Growth and Quenching since z = 2.5 in CANDELS/3D-HST

NASA Astrophysics Data System (ADS)

Lang, Philipp; Wuyts, Stijn; Somerville, Rachel S.; Förster Schreiber, Natascha M.; Genzel, Reinhard; Bell, Eric F.; Brammer, Gabe; Dekel, Avishai; Faber, Sandra M.; Ferguson, Henry C.; Grogin, Norman A.; Kocevski, Dale D.; Koekemoer, Anton M.; Lutz, Dieter; McGrath, Elizabeth J.; Momcheva, Ivelina; Nelson, Erica J.; Primack, Joel R.; Rosario, David J.; Skelton, Rosalind E.; Tacconi, Linda J.; van Dokkum, Pieter G.; Whitaker, Katherine E.

2014-06-01

Exploiting the deep high-resolution imaging of all five CANDELS fields, and accurate redshift information provided by 3D-HST, we investigate the relation between structure and stellar populations for a mass-selected sample of 6764 galaxies above 1010 M ⊙, spanning the redshift range 0.5 < z < 2.5. For the first time, we fit two-dimensional models comprising a single Sérsic fit and two-component (i.e., bulge + disk) decompositions not only to the H-band light distributions, but also to the stellar mass maps reconstructed from resolved stellar population modeling. We confirm that the increased bulge prominence among quiescent galaxies, as reported previously based on rest-optical observations, remains in place when considering the distributions of stellar mass. Moreover, we observe an increase of the typical Sérsic index and bulge-to-total ratio (with median B/T reaching 40%-50%) among star-forming galaxies above 1011 M ⊙. Given that quenching for these most massive systems is likely to be imminent, our findings suggest that significant bulge growth precedes a departure from the star-forming main sequence. We demonstrate that the bulge mass (and ideally knowledge of the bulge and total mass) is a more reliable predictor of the star-forming versus quiescent state of a galaxy than the total stellar mass. The same trends are predicted by the state-of-the-art, semi-analytic model by Somerville et al. In this model, bulges and black holes grow hand in hand through merging and/or disk instabilities, and feedback from active galactic nuclei shuts off star formation. Further observations will be required to pin down star formation quenching mechanisms, but our results imply that they must be internal to the galaxies and closely associated with bulge growth.

Contacting graphene in a 200 mm wafer silicon technology environment

NASA Astrophysics Data System (ADS)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

THE NUMBER OF TIDAL DWARF SATELLITE GALAXIES IN DEPENDENCE OF BULGE INDEX

DOE Office of Scientific and Technical Information (OSTI.GOV)

López-Corredoira, Martín; Kroupa, Pavel, E-mail: martinlc@iac.es, E-mail: pavel@astro.uni-bonn.de

We show that a significant correlation (up to 5σ) emerges between the bulge index, defined to be larger for a larger bulge/disk ratio, in spiral galaxies with similar luminosities in the Galaxy Zoo 2 of the Sloan Digital Sky Survey and the number of tidal-dwarf galaxies in the catalog by Kaviraj et al. In the standard cold or warm dark matter cosmological models, the number of satellite galaxies correlates with the circular velocity of the dark matter host halo. In generalized gravity models without cold or warm dark matter, such a correlation does not exist, because host galaxies cannot capture infalling dwarfmore » galaxies due to the absence of dark-matter-induced dynamical friction. However, in such models, a correlation is expected to exist between the bulge mass and the number of satellite galaxies because bulges and tidal-dwarf satellite galaxies form in encounters between host galaxies. This is not predicted by dark matter models in which bulge mass and the number of satellites are a priori uncorrelated because higher bulge/disk ratios do not imply higher dark/luminous ratios. Hence, our correlation reproduces the prediction of scenarios without dark matter, whereas an explanation is not found readily from the a priori predictions of the standard scenario with dark matter. Further research is needed to explore whether some application of the standard theory may explain this correlation.« less

DEMOGRAPHICS OF BULGE TYPES WITHIN 11 Mpc AND IMPLICATIONS FOR GALAXY EVOLUTION

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fisher, David B.; Drory, Niv, E-mail: dbfisher@astro.umd.edu

2011-06-01

We present an inventory of galaxy bulge types (elliptical galaxy, classical bulge, pseudobulge, and bulgeless galaxy) in a volume-limited sample within the local 11 Mpc sphere using Spitzer 3.6 {mu}m and Hubble Space Telescope data. We find that whether counting by number, star formation rate, or stellar mass, the dominant galaxy type in the local universe has pure disk characteristics (either hosting a pseudobulge or being bulgeless). Galaxies that contain either a pseudobulge or no bulge combine to account for over 80% of the number of galaxies above a stellar mass of 10{sup 9} M{sub sun}. Classical bulges and ellipticalmore » galaxies account for {approx}1/4, and disks for {approx}3/4 of the stellar mass in the local 11 Mpc. About 2/3 of all star formation in the local volume takes place in galaxies with pseudobulges. Looking at the fraction of galaxies with different bulge types as a function of stellar mass, we find that the frequency of classical bulges strongly increases with stellar mass, and comes to dominate above 10{sup 10.5} M{sub sun}. Galaxies with pseudobulges dominate at 10{sup 9.5}-10{sup 10.5} M{sub sun}. Yet lower-mass galaxies are most likely to be bulgeless. If pseudobulges are not a product of mergers, then the frequency of pseudobulges in the local universe poses a challenge for galaxy evolution models.« less

Chemical Characterization of the Inner Galactic bulge: North-South Symmetry

NASA Astrophysics Data System (ADS)

Nandakumar, G.; Ryde, N.; Schultheis, M.; Thorsbro, B.; Jönsson, H.; Barklem, P. S.; Rich, R. M.; Fragkoudi, F.

2018-05-01

While the number of stars in the Galactic bulge with detailed chemical abundance measurements is increasing rapidly, the inner Galactic bulge (|b| < 2°) remains poorly studied, due to heavy interstellar absorption and photometric crowding. We have carried out a high-resolution IR spectroscopic study of 72 M giants in the inner bulge using the CRIRES (ESO/VLT) facility. Our spectra cover the wavelength range of 2.0818 - 2.1444 μm with the resolution of R˜50,000 and have signal-to-noise ratio of 50-100. Our stars are located along the bulge minor axis at l = 0°, b = ±0°, ±1°, ±2°and +3°. Our sample was analysed in a homogeneous way using the most current K-band line list. We clearly detect a bimodal MDF with a metal-rich peak at ˜ +0.3 dex and a metal-poor peak at ˜ -0.5 dex, and no stars with [Fe/H] > +0.6 dex. The Galactic Center field reveals in contrast a mainly metal-rich population with a mean metallicity of +0.3 dex. We derived [Mg/Fe] and [Si/Fe] abundances which are consistent with trends from the outer bulge. We confirm for the supersolar metallicity stars the decreasing trend in [Mg/Fe] and [Si/Fe] as expected from chemical evolution models. With the caveat of a relatively small sample, we do not find significant differences in the chemical abundances between the Northern and the Southern fields, hence the evidence is consistent with symmetry in chemistry between North and South.

Clues to the Formation of Lenticular Galaxies Using Spectroscopic Bulge-Disk Decomposition

NASA Astrophysics Data System (ADS)

Johnston, E. J.; Aragón-Salamanca, A.; Merrifield, M. R.; Bedregal, A. G.

2014-03-01

Lenticular galaxies have long been thought of as evolved spirals, but the processes involved to quench the star formation are still unclear. By studying the individual star formation histories of the bulges and disks of lenticulars, it is possible to look for clues to the processes that triggered their transformation from spirals. To accomplish this feat, we present a new method for spectroscopic bulge-disk decomposition, in which a long-slit spectrum is decomposed into two one-dimensional spectra representing purely the bulge and disk light. We present preliminary results from applying this method to lenticular galaxies in the Virgo and Fornax Clusters, in which we show that the most recent star formation activity in these galaxies occurred within the bulges. We also find that the star formation timescales of the bulges are longer than the disks, and that more massive galaxies take longer to lose their gas during the transformation. These results point towards slow processes, such as ram-pressure stripping or harassment, being the mechanism responsible for the quenching of star formation in spirals, followed by a burst of star formation in the central regions from the gas that has been funnelled inwards through the disk.

Before the Bar: Kinematic Detection of a Spheroidal Metal-poor Bulge Component

NASA Astrophysics Data System (ADS)

Kunder, Andrea; Rich, R. M.; Koch, A.; Storm, J.; Nataf, D. M.; De Propris, R.; Walker, A. R.; Bono, G.; Johnson, C. I.; Shen, Juntai; Li, Z.-Y.

2016-04-01

We present 947 radial velocities of RR Lyrae variable stars in four fields located toward the Galactic bulge, observed within the data from the ongoing Bulge RR Lyrae Radial Velocity Assay (BRAVA-RR). We show that these RR Lyrae stars (RRLs) exhibit hot kinematics and null or negligible rotation and are therefore members of a separate population from the bar/pseudobulge that currently dominates the mass and luminosity of the inner Galaxy. Our RRLs predate these structures and have metallicities, kinematics, and spatial distribution that are consistent with a “classical” bulge, although we cannot yet completely rule out the possibility that they are the metal-poor tail of a more metal-rich ([{Fe}/{{H}}]˜ -1 dex) halo-bulge population. The complete catalog of radial velocities for the BRAVA-RR stars is also published electronically.

The missing bulge globular clusters in M31 - New optical candidates

NASA Technical Reports Server (NTRS)

Wirth, A.; Smarr, L. L.; Bruno, T. L.

1985-01-01

A new method to attack the question of the 'missing' globular clusters in the bulge of M31 is used. Image-processing techniques were used on 13 videocamera fields to obtain an accurate photometric census of stellar objects in M31's bulge down to a limiting B magnitude of 21. This luminosity distribution is compared with the Bahcall-Soneira model of galactic foreground stars. A statistically significant excess of bright images in the luminosity range of globular clusters at M31's distance is found. If the optical candidates considered prove to be globular clusters, they would double the number of known globular clusters in the surveyed region. The colors of a subsample of the candidates are the same as those of the known globular clusters. It is concluded that the previously observed flattening away from a de Vaucouleurs law in the radial distribution of M31 may be an observational selection effect. As an offshoot of this analysis, no evidence is found for very luminous stars in the inner bulge of M31. The lack of such stars indicates that there has not been active star formation (with a normal IMF) in the recent past. Coupled with the existence of many planetary nebulae in the bulge, this may strengthen the case for a galactic wind in M31's bulge.

Signatures of bulge triaxiality from kinematics in Baade's window

NASA Astrophysics Data System (ADS)

Zhao, Hongsheng; Spergel, David N.; Rich, R. Michael

1994-12-01

in the retrograde sense in the rest frame. They have nearly round loop shapes and are aligned perpendicularly to the bar, hence limit the triaxiality of the bar potential. The correlations between the metallicity and the orbit families can develop if the bulge forms dissipatively on a sufficiently long time scale. However, it is difficult to explain such correlations if most stars in the inner Galaxy form during the violent relaxation phase.

A wafer-level vacuum package using glass-reflowed silicon through-wafer interconnection for nano/micro devices.

PubMed

Jin, Joo-Young; Yoo, Seung-Hyun; Yoo, Byung-Wook; Kim, Yong-Kweon

2012-07-01

We propose a vacuum wafer-level packaging (WLP) process using glass-reflowed silicon via for nano/micro devices (NMDs). A through-wafer interconnection (TWIn) substrate with silicon vias and reflowed glass is introduced to accomplish a vertical feed-through of device. NMDs are fabricated in the single crystal silicon (SCS) layer which is formed on the TWIn substrate by Au eutectic bonding including Cr adhesion layer. The WLPof the devices is achieved with the capping glass wafer anodically bonded to the SCS layer. In order to demonstrate the successful hermetic packaging, we fabricated the micro-Pirani gauge in the SCS layer, and packaged it in the wafer-level. The vacuum level inside the packaging was measured to be 3.1 Torr with +/- 0.12 Torr uncertainty, and the packaging leakage was not detected during 24 hour after the packaging.

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

The stellar population and luminosity function in M31 bulge and Inner Disk Fields

NASA Technical Reports Server (NTRS)

Rich, R. Michael; Mould, J. R.; Graham, James R.

1993-01-01

We report infrared photometry and stellar identifications for stars in five fields in the M31 bulge located from 2 to 11 arcmin from the nucleus. These fields have been chosen such that the bulge/disk star ratio predicted from Kent's (1989) small bulge model varies from 7:1 to 1:5, allowing a study of near pure disk and near pure bulge stellar populations. We reject the hypothesis of Davies et al. (1991) that luminous stars found within 500 pc of the nucleus are due to a contaminating disk population. We find that the bulge contains stars in excess of M(sub bol) = -5 mag and that the bulge luminosity function has a distinct shape different from the disk fields. We find many stars redder than (J-K) = 2 mag, and suggest that these stars may be the counterparts of the IRAS-selected Galactic bulge Miras studied by Whitelock et at. (1991). The number of bright stars (M(sub bol) is less than -5 mag) falls off more rapidly than the r band surface brightness. By building model fields out of a bulge luminosity function and artificial stars, we are able to show that the change in the luminosity function toward the center cannot be explained simply by the mismeasurement of overcrowded star images. However, these tests also raise the possibility that the asymptotic giant branch (AGB) tip may be approximately equal to 1 mag fainter than actually measured in our most crowded field, reaching only M(sub bol) = -5. We compare observed counts of AGB stars with those predicted from theoretical lifetimes using a technique of general interest for this problem, the Fuel Consumption Theorem of Renzini & Buzzoni (1986) Spectral Evolution of Galaxies (Reidel, Dordrecht). Our methodology is generally applicable to the study of other resolved extragalactic stellar populations. The number of observed stars per magnitude up to a luminosity of M(bol) = -5.5 mag is consistent with AGB evolution of the whole population of the innermost bulge field with the standard lifetime on the AGB of 1.3 Myr

Post exposure bake unit equipped with wafer-shape compensation technology

NASA Astrophysics Data System (ADS)

Goto, Shigehiro; Morita, Akihiko; Oyama, Kenichi; Hori, Shimpei; Matsuchika, Keiji; Taniguchi, Hideyuki

2007-03-01

In 193nm lithography, it is well known that Critical Dimension Uniformity (CDU) within wafer is especially influenced by temperature variation during Post Exposure Bake (PEB) process. This temperature variation has been considered to be caused by the hot plate unit, and improvement of temperature uniformity within hot plate itself has been focused to achieve higher CDU. However, we have found that the impact of the wafer shape on temperature uniformity within wafer can not be ignored when the conventional PEB processing system is applied to an advanced resist technology. There are two factors concerned with the wafer shape. First, gravity force of the wafer itself generates wafer shape bending because wafer is simply supported by a few proximity gaps on the conventional hot plate. Next, through the semiconductor manufacturing process, wafer is gradually warped due to the difference of the surface stress between silicon and deposited film layers (Ex. Si-Oxide, Si-Nitride). Therefore, the variation of the clearance between wafer backside and hot plate surface leads to non-uniform thermal conductivity within wafer during PEB processing, and eventually impacts on the CDU within wafer. To overcome this problem concerned with wafer shape during PEB processing, we have developed the new hot plate equipped with the wafer shape compensation technology. As a result of evaluation, we have confirmed that this new PEB system has an advantage not only for warped wafer but also for flat (bare) wafer.

"Performance Of A Wafer Stepper With Automatic Intra-Die Registration Correction."

NASA Astrophysics Data System (ADS)

van den Brink, M. A.; Wittekoek, S.; Linders, H. F. D.; van Hout, F. J.; George, R. A.

1987-01-01

An evaluation of a wafer stepper with the new improved Philips/ASM-L phase grating alignment system is reported. It is shown that an accurate alignment system needs an accurate X-Y-0 wafer stage and an accurate reticle Z stage to realize optimum overlay accuracy. This follows from a discussion of the overlay budget and an alignment procedure model. The accurate wafer stage permits high overlay accuracy using global alignment only, thus eliminating the throughput penalty of align-by-field schemes. The accurate reticle Z stage enables an intra-die magnification control with respect to the wafer scale. Various overlay data are reported, which have been measured with the automatic metrology program of the stepper. It is demonstrated that the new dual alignment system (with the external spatial filter) has improved the ability to align to weakly reflecting layers. The results are supported by a Fourier analysis of the alignment signal. Resolution data are given for the PAS 2500 projection lenses, which show that the high overlay accuracy of the system is properly matched with submicron linewidth control. The results of a recently introduced 20mm i-line lens with a numerical aperture of 0.4 (Zeiss 10-78-58) are included.

Forming electrical interconnections through semiconductor wafers

NASA Technical Reports Server (NTRS)

Anthony, T. R.

1981-01-01

An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

VERY METAL-POOR STARS IN THE OUTER GALACTIC BULGE FOUND BY THE APOGEE SURVEY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia Perez, Ana E.; Majewski, Steven R.; Hearty, Fred R.

2013-04-10

Despite its importance for understanding the nature of early stellar generations and for constraining Galactic bulge formation models, at present little is known about the metal-poor stellar content of the central Milky Way. This is a consequence of the great distances involved and intervening dust obscuration, which challenge optical studies. However, the Apache Point Observatory Galactic Evolution Experiment (APOGEE), a wide-area, multifiber, high-resolution spectroscopic survey within Sloan Digital Sky Survey III, is exploring the chemistry of all Galactic stellar populations at infrared wavelengths, with particular emphasis on the disk and the bulge. An automated spectral analysis of data on 2403more » giant stars in 12 fields in the bulge obtained during APOGEE commissioning yielded five stars with low metallicity ([Fe/H] {<=} -1.7), including two that are very metal-poor [Fe/H] {approx} -2.1 by bulge standards. Luminosity-based distance estimates place the 5 stars within the outer bulge, where 1246 of the other analyzed stars may reside. A manual reanalysis of the spectra verifies the low metallicities, and finds these stars to be enhanced in the {alpha}-elements O, Mg, and Si without significant {alpha}-pattern differences with other local halo or metal-weak thick-disk stars of similar metallicity, or even with other more metal-rich bulge stars. While neither the kinematics nor chemistry of these stars can yet definitively determine which, if any, are truly bulge members, rather than denizens of other populations co-located with the bulge, the newly identified stars reveal that the chemistry of metal-poor stars in the central Galaxy resembles that of metal-weak thick-disk stars at similar metallicity.« less

Laser cutting sandwich structure glass-silicon-glass wafer with laser induced thermal-crack propagation

NASA Astrophysics Data System (ADS)

Cai, Yecheng; Wang, Maolu; Zhang, Hongzhi; Yang, Lijun; Fu, Xihong; Wang, Yang

2017-08-01

Silicon-glass devices are widely used in IC industry, MEMS and solar energy system because of their reliability and simplicity of the manufacturing process. With the trend toward the wafer level chip scale package (WLCSP) technology, the suitable dicing method of silicon-glass bonded structure wafer has become necessary. In this paper, a combined experimental and computational approach is undertaken to investigate the feasibility of cutting the sandwich structure glass-silicon-glass (SGS) wafer with laser induced thermal-crack propagation (LITP) method. A 1064 nm semiconductor laser cutting system with double laser beams which could simultaneously irradiate on the top and bottom of the sandwich structure wafer has been designed. A mathematical model for describing the physical process of the interaction between laser and SGS wafer, which consists of two surface heating sources and two volumetric heating sources, has been established. The temperature stress distribution are simulated by using finite element method (FEM) analysis software ABAQUS. The crack propagation process is analyzed by using the J-integral method. In the FEM model, a stationary planar crack is embedded in the wafer and the J-integral values around the crack front edge are determined using the FEM. A verification experiment under typical parameters is conducted and the crack propagation profile on the fracture surface is examined by the optical microscope and explained from the stress distribution and J-integral value.

Most pseudo-bulges can be formed at later stages of major mergers

NASA Astrophysics Data System (ADS)

Sauvaget, T.; Hammer, F.; Puech, M.; Yang, Y. B.; Flores, H.; Rodrigues, M.

2018-01-01

Most giant spiral galaxies have pseudo or disc-like bulges that are considered to be the result of purely secular processes. This may challenge the hierarchical scenario predicting about one major merger per massive galaxy (>3 × 1010 M⊙) since the last ∼9 billion years. Here, we verify whether or not the association between pseudo-bulges and secular processes is irrevocable. Using GADGET2 N-body/SPH simulations, we have conducted a systematic study of remnants of major mergers for which progenitors have been selected (1) to follow the gas richness-look back time relationship, and (2) with a representative distribution of orbits and spins in a cosmological frame. Analysing the surface mass density profile of both nearby galaxies and merger remnants with two components, we find that most of them show pseudo-bulges or bar dominated centres. Even if some orbits lead to classical bulges just after the fusion, the contamination by the additional gas that gradually accumulates to the centre and forming stars later on, leads to remnants apparently dominated by pseudo-bulges. We also found that simple smoothed particle hydrodynamics (SPH) simulations should be sufficient to form realistic spiral galaxies as remnants of ancient gas-rich mergers without the need for specifically tuned feedback conditions. We then conclude that pseudo-bulges and bars in spiral galaxies are natural consequences of major mergers when they are realized in a cosmological context, i.e. with gas-rich progenitors as expected when selected in the distant Universe.

Evaluation of a cyanoacrylate dressing to manage peristomal skin alterations under ostomy skin barrier wafers.

PubMed

Milne, Catherine T; Saucier, Darlene; Trevellini, Chenel; Smith, Juliet

2011-01-01

Peristomal skin alterations under ostomy barrier wafers are a commonly reported problem. While a number of interventions to manage this issue have been reported, the use of a topically applied cyanoacrylate has received little attention. This case series describes the use of a topical cyanoacrylate for the management of peristomal skin alterations in persons living with an ostomy. Using a convenience sample, the topical cyanoacrylate dressing was applied to 11 patients with peristomal skin disruption under ostomy wafers in acute care and outpatient settings. The causes of barrier function interruption were also addressed to enhance outcomes. Patients were assessed for wound discomfort using a Likert Scale, time to healing, and number of appliance changes. Patient satisfaction was also examined. Average reported discomfort levels were 9.5 out of 10 at the initial peristomal irritation assessment visit decreased to 3.5 at the first wafer change and were absent by the second wafer change. Wafers had increasing wear time between changes in both settings with acute care patients responding faster. Epidermal resurfacing occurred within 10.2 days in outpatients and within 7 days in acute care patients. Because of the skin sealant action of this dressing, immediate adherence of the wafer was reported at all pouch changes.

Heating device for semiconductor wafers

DOEpatents

Vosen, Steven R.

1999-01-01

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Hair Follicle Bulge Stem Cells Appear Dispensable for the Acute Phase of Wound Re‐epithelialization

PubMed Central

Garcin, Clare L.; Ansell, David M.; Headon, Denis J.; Paus, Ralf

2016-01-01

Abstract The cutaneous healing response has evolved to occur rapidly, in order to minimize infection and to re‐establish epithelial homeostasis. Rapid healing is achieved through complex coordination of multiple cell types, which importantly includes specific cell populations within the hair follicle (HF). Under physiological conditions, the epithelial compartments of HF and interfollicular epidermis remain discrete, with K15+ve bulge stem cells contributing progeny for HF reconstruction during the hair cycle and as a basis for hair shaft production during anagen. Only upon wounding do HF cells migrate from the follicle to contribute to the neo‐epidermis. However, the identity of the first‐responding cells, and in particular whether this process involves a direct contribution of K15+ve bulge cells to the early stage of epidermal wound repair remains unclear. Here we demonstrate that epidermal injury in murine skin does not induce bulge activation during early epidermal wound repair. Specifically, bulge cells of uninjured HFs neither proliferate nor appear to migrate out of the bulge niche upon epidermal wounding. In support of these observations, Diphtheria toxin‐mediated partial ablation of K15+ve bulge cells fails to delay wound healing. Our data suggest that bulge cells only respond to epidermal wounding during later stages of repair. We discuss that this response may have evolved as a protective safeguarding mechanism against bulge stem cell exhaust and tumorigenesis. Stem Cells 2016;34:1377–1385 PMID:26756547

Using 3D Spectroscopy to Probe the Orbital Structure of Composite Bulges

NASA Astrophysics Data System (ADS)

Erwin, Peter; Saglia, Roberto; Thomas, Jens; Fabricius, Maximilian; Bender, Ralf; Rusli, Stephanie; Nowak, Nina; Beckman, John E.; Vega Beltrán, Juan Carlos

2015-02-01

Detailed imaging and spectroscopic analysis of the centers of nearby S0 and spiral galaxies shows the existence of ``composite bulges'', where both classical bulges and disky pseudobulges coexist in the same galaxy. As part of a search for supermassive black holes in nearby galaxy nuclei, we obtained VLT-SINFONI observations in adaptive-optics mode of several of these galaxies. Schwarzschild dynamical modeling enables us to disentangle the stellar orbital structure of the different central components, and to distinguish the differing contributions of kinematically hot (classical bulge) and kinematically cool (pseudobulge) components in the same galaxy.

Bulge Growth and Quenching Since Z=2.5 in Candels/3D-HST

NASA Technical Reports Server (NTRS)

Lang, Phillip; Wuyts, Stijn; Somerville, Rachel S.; Schreiber, Natascha M. Foerster; Genzel, Reinhard; Bell, Eric F.; Brammer, Gabe; Dekel, Avishai; Faber, Sandra M.; Ferguson, Henry C.;

Noncontact sheet resistance measurement technique for wafer inspection

NASA Astrophysics Data System (ADS)

Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

1995-12-01

A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage.

PubMed

Rack, Alexander; Scheel, Mario; Danilewsky, Andreas N

2016-03-01

Fracture and breakage of single crystals, particularly of silicon wafers, are multi-scale problems: the crack tip starts propagating on an atomic scale with the breaking of chemical bonds, forms crack fronts through the crystal on the micrometre scale and ends macroscopically in catastrophic wafer shattering. Total wafer breakage is a severe problem for the semiconductor industry, not only during handling but also during temperature treatments, leading to million-dollar costs per annum in a device production line. Knowledge of the relevant dynamics governing perfect cleavage along the {111} or {110} faces, and of the deflection into higher indexed {hkl} faces of higher energy, is scarce due to the high velocity of the process. Imaging techniques are commonly limited to depicting only the state of a wafer before the crack and in the final state. This paper presents, for the first time, in situ high-speed crack propagation under thermal stress, imaged simultaneously in direct transmission and diffraction X-ray imaging. It shows how the propagating crack tip and the related strain field can be tracked in the phase-contrast and diffracted images, respectively. Movies with a time resolution of microseconds per frame reveal that the strain and crack tip do not propagate continuously or at a constant speed. Jumps in the crack tip position indicate pinning of the crack tip for about 1-2 ms followed by jumps faster than 2-6 m s(-1), leading to a macroscopically observed average velocity of 0.028-0.055 m s(-1). The presented results also give a proof of concept that the described X-ray technique is compatible with studying ultra-fast cracks up to the speed of sound.

Effect of an upstream bulge configuration on film cooling with and without mist injection.

PubMed

Wang, Jin; Li, Qianqian; Sundén, Bengt; Ma, Ting; Cui, Pei

2017-12-01

To meet the economic requirements of power output, the increased inlet temperature of modern gas turbines is above the melting point of the material. Therefore, high-efficient cooling technology is needed to protect the blades from the hot mainstream. In this study, film cooling was investigated in a simplified channel. A bulge located upstream of the film hole was numerically investigated by analysis of the film cooling effectiveness distribution downstream of the wall. The flow distribution in the plate channel is first presented. Comparing with a case without bulge, different cases with bulge heights of 0.1d, 0.3d and 0.5d were examined with blowing ratios of 0.5 and 1.0. Cases with 1% mist injection were also included in order to obtain better cooling performance. Results show that the bulge configuration located upstream the film hole makes the cooling film more uniform, and enhanceslateral cooling effectiveness. Unlike other cases, the configuration with a 0.3d-height bulge shows a good balance in improving the downstream and lateral cooling effectiveness. Compared with the case without mist at M = 0.5, the 0.3d-height bulge with 1% mist injection increases lateral average effectiveness by 559% at x/d = 55. In addition, a reduction of the thermal stress concentration can be obtained by increasing the height of the bulge configuration. Copyright © 2017 Elsevier Ltd. All rights reserved.

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.

PubMed

Zhu, Tongtong; Liu, Yingjun; Ding, Tao; Fu, Wai Yuen; Jarman, John; Ren, Christopher Xiang; Kumar, R Vasant; Oliver, Rachel A

2017-03-27

Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11-20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.

Wafer-scale metasurface for total power absorption, local field enhancement and single molecule Raman spectroscopy

PubMed Central

Wang, Dongxing; Zhu, Wenqi; Best, Michael D.; Camden, Jon P.; Crozier, Kenneth B.

2013-01-01

The ability to detect molecules at low concentrations is highly desired for applications that range from basic science to healthcare. Considerable interest also exists for ultrathin materials with high optical absorption, e.g. for microbolometers and thermal emitters. Metal nanostructures present opportunities to achieve both purposes. Metal nanoparticles can generate gigantic field enhancements, sufficient for the Raman spectroscopy of single molecules. Thin layers containing metal nanostructures (“metasurfaces”) can achieve near-total power absorption at visible and near-infrared wavelengths. Thus far, however, both aims (i.e. single molecule Raman and total power absorption) have only been achieved using metal nanostructures produced by techniques (high resolution lithography or colloidal synthesis) that are complex and/or difficult to implement over large areas. Here, we demonstrate a metasurface that achieves the near-perfect absorption of visible-wavelength light and enables the Raman spectroscopy of single molecules. Our metasurface is fabricated using thin film depositions, and is of unprecedented (wafer-scale) extent. PMID:24091825

Switchable static friction of piezoelectric composite—silicon wafer contacts

NASA Astrophysics Data System (ADS)

van den Ende, D. A.; Fischer, H. R.; Groen, W. A.; van der Zwaag, S.

2013-04-01

The meso-scale surface roughness of piezoelectric fiber composites can be manipulated by applying an electric field to a piezocomposite with a polished surface. In the absence of an applied voltage, the tips of the embedded piezoelectric ceramic fibers are below the surface of the piezocomposite and a silicon wafer counter surface rests solely on the matrix region of the piezocomposite surface. When actuated, the piezoelectric ceramic fibers protrude from the surface and the wafer rests solely on these protrusions. A threefold decrease in engineering static friction coefficient upon actuation of the piezocomposite was observed: from μ* = 1.65 to μ* = 0.50. These experimental results could be linked to the change in contact surface area and roughness using capillary adhesion theory, which relates the adhesive force to the number and size of the contacting asperities for the different surface states.

Chandra Studies of Unidentified X-ray Sources in the Galactic Bulge

NASA Astrophysics Data System (ADS)

Mori, Hideyuki

2013-09-01

We propose to study a complete X-ray sample in the luminosity range of > 10^34 erg s^-1 in the Galactic bulge, including 5 unidentified sources detected in the ROSAT All Sky Survey. Our goal is to obtain a clear picture about X-ray populations in the bulge, by utilizing the excellent Chandra position accuracy leading to unique optical identification together with the X-ray spectral properties. This is a new step toward understanding the formation history of the bulge. Furthermore, because the luminosity range we observe corresponds to a ``missing link'' region ever studied for a neutron star or blackhole X-ray binary, our results are also unique to test accretion disk theories at intermediate mass accretion rates.

Heating device for semiconductor wafers

DOEpatents

Vosen, S.R.

1999-07-27

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Hair Follicle Bulge Stem Cells Appear Dispensable for the Acute Phase of Wound Re-epithelialization.

PubMed

Garcin, Clare L; Ansell, David M; Headon, Denis J; Paus, Ralf; Hardman, Matthew J

2016-05-01

The cutaneous healing response has evolved to occur rapidly, in order to minimize infection and to re-establish epithelial homeostasis. Rapid healing is achieved through complex coordination of multiple cell types, which importantly includes specific cell populations within the hair follicle (HF). Under physiological conditions, the epithelial compartments of HF and interfollicular epidermis remain discrete, with K15(+ve) bulge stem cells contributing progeny for HF reconstruction during the hair cycle and as a basis for hair shaft production during anagen. Only upon wounding do HF cells migrate from the follicle to contribute to the neo-epidermis. However, the identity of the first-responding cells, and in particular whether this process involves a direct contribution of K15(+ve) bulge cells to the early stage of epidermal wound repair remains unclear. Here we demonstrate that epidermal injury in murine skin does not induce bulge activation during early epidermal wound repair. Specifically, bulge cells of uninjured HFs neither proliferate nor appear to migrate out of the bulge niche upon epidermal wounding. In support of these observations, Diphtheria toxin-mediated partial ablation of K15(+ve) bulge cells fails to delay wound healing. Our data suggest that bulge cells only respond to epidermal wounding during later stages of repair. We discuss that this response may have evolved as a protective safeguarding mechanism against bulge stem cell exhaust and tumorigenesis. Stem Cells 2016;34:1377-1385. © 2016 The Authors. Stem Cells published by Wiley Periodicals, Inc. on behalf of AlphaMed Press.

Elucidation of kinematical and dynamical structure of the Galactic bulge

NASA Astrophysics Data System (ADS)

Yano, T.; Gouda, N.; Ueda, H.; Koyama, H.; Kan-ya, Y.; Taruya, A.

2008-07-01

Future space mission of astrometric satellite, GAIA and JASMINE (Japan Astrometry Satellite Mission for Infrared Exploration), will produce astrometric parameter, such as positions, parallaxes, and proper motions of stars in the Galactic bulge. Then kinematical information will be obtained in the future. Accordingly it is expected that our understanding of the dynamical structure will be greatly improved. Therefore it is important to make a method to construct a kinematical and dynamical structure of the Galactic bulge immediately.

Orbits of Selected Globular Clusters in the Galactic Bulge

NASA Astrophysics Data System (ADS)

Pérez-Villegas, A.; Rossi, L.; Ortolani, S.; Casotto, S.; Barbuy, B.; Bica, E.

2018-05-01

We present orbit analysis for a sample of eight inner bulge globular clusters, together with one reference halo object. We used proper motion values derived from long time base CCD data. Orbits are integrated in both an axisymmetric model and a model including the Galactic bar potential. The inclusion of the bar proved to be essential for the description of the dynamical behaviour of the clusters. We use the Monte Carlo scheme to construct the initial conditions for each cluster, taking into account the uncertainties in the kinematical data and distances. The sample clusters show typically maximum height to the Galactic plane below 1.5 kpc, and develop rather eccentric orbits. Seven of the bulge sample clusters share the orbital properties of the bar/bulge, having perigalactic and apogalatic distances, and maximum vertical excursion from the Galactic plane inside the bar region. NGC 6540 instead shows a completely different orbital behaviour, having a dynamical signature of the thick disc. Both prograde and prograde-retrograde orbits with respect to the direction of the Galactic rotation were revealed, which might characterise a chaotic behaviour.

THE BULGE RADIAL VELOCITY ASSAY (BRAVA). II. COMPLETE SAMPLE AND DATA RELEASE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunder, Andrea; De Propris, Roberto; Stubbs, Scott A.

2012-03-15

We present new radial velocity measurements from the Bulge Radial Velocity Assay, a large-scale spectroscopic survey of M-type giants in the Galactic bulge/bar region. The sample of {approx}4500 new radial velocities, mostly in the region -10 Degree-Sign < l < +10 Degree-Sign and b Almost-Equal-To -6 Degree-Sign , more than doubles the existent published data set. Our new data extend our rotation curve and velocity dispersion profile to +20 Degree-Sign , which is {approx}2.8 kpc from the Galactic center. The new data confirm the cylindrical rotation observed at -6 Degree-Sign and -8 Degree-Sign and are an excellent fit to themore » Shen et al. N-body bar model. We measure the strength of the TiO{epsilon} molecular band as a first step toward a metallicity ranking of the stellar sample, from which we confirm the presence of a vertical abundance gradient. Our survey finds no strong evidence of previously unknown kinematic streams. We also publish our complete catalog of radial velocities, photometry, TiO band strengths, and spectra, which is available at the Infrared Science Archive as well as at UCLA.« less

EMISSION-LINE OBJECTS PROJECTED UPON THE GALACTIC BULGE*

PubMed Central

Herbig, G. H.

1969-01-01

Low-dispersion slit spectrograms have been obtained of 34 faint objects that lie in the direction of the galactic bulge and have the Hα line in emission upon a detectable continuum. Eleven of these are certain or probable symbiotic stars. A rough comparison with R CrB stars in the same area suggests that these brightest symbiotics in the bulge have in the mean Mv ≈ -3 to -4, which suggest Population II red giants rather than conventional Population I M-type objects. The sample also contains a number of hot stars having H and [O II] or [O III] in emission, as well as four conventional Be stars, and six certain or possible planetary nebulae. Images PMID:16578699

Emission-line objects projected upon the galactic bulge.

PubMed

Herbig, G H

1969-08-01

Low-dispersion slit spectrograms have been obtained of 34 faint objects that lie in the direction of the galactic bulge and have the Halpha line in emission upon a detectable continuum. Eleven of these are certain or probable symbiotic stars. A rough comparison with R CrB stars in the same area suggests that these brightest symbiotics in the bulge have in the mean M(v) approximately -3 to -4, which suggest Population II red giants rather than conventional Population I M-type objects. The sample also contains a number of hot stars having H and [O II] or [O III] in emission, as well as four conventional Be stars, and six certain or possible planetary nebulae.

Diffraction and Smith-Purcell radiation on the hemispherical bulges in a metal plate

NASA Astrophysics Data System (ADS)

Syshchenko, V. V.; Larikova, E. A.; Gladkih, Yu. P.

2017-12-01

The radiation resulting from the uniform motion of a charged particle near a hemispheric bulge on a metal plane is considered. The description of the radiation process based on the method of images is developed for the case of non-relativistic particle and a perfectly conducting target. The spectral-angular and spectral densities of the diffraction radiation on the single bulge (as well as the Smith-Purcell radiation on the periodic string of bulges) are computed. The possibility of application of the developed approach to the case of relativistic incident particle is discussed.

Patterned wafer geometry grouping for improved overlay control

NASA Astrophysics Data System (ADS)

Lee, Honggoo; Han, Sangjun; Woo, Jaeson; Park, Junbeom; Song, Changrock; Anis, Fatima; Vukkadala, Pradeep; Jeon, Sanghuck; Choi, DongSub; Huang, Kevin; Heo, Hoyoung; Smith, Mark D.; Robinson, John C.

2017-03-01

Process-induced overlay errors from outside the litho cell have become a significant contributor to the overlay error budget including non-uniform wafer stress. Previous studies have shown the correlation between process-induced stress and overlay and the opportunity for improvement in process control, including the use of patterned wafer geometry (PWG) metrology to reduce stress-induced overlay signatures. Key challenges of volume semiconductor manufacturing are how to improve not only the magnitude of these signatures, but also the wafer to wafer variability. This work involves a novel technique of using PWG metrology to provide improved litho-control by wafer-level grouping based on incoming process induced overlay, relevant for both 3D NAND and DRAM. Examples shown in this study are from 19 nm DRAM manufacturing.

Highly Transparent Wafer-Scale Synthesis of Crystalline WS2 Nanoparticle Thin Film for Photodetector and Humidity-Sensing Applications.

PubMed

Pawbake, Amit S; Waykar, Ravindra G; Late, Dattatray J; Jadkar, Sandesh R

2016-02-10

In the present investigation, we report a one-step synthesis method of wafer-scale highly crystalline tungsten disulfide (WS2) nanoparticle thin film by using a modified hot wire chemical vapor deposition (HW-CVD) technique. The average size of WS2 nanoparticle is found to be 25-40 nm over an entire 4 in. wafer of quartz substrate. The low-angle XRD data of WS2 nanoparticle shows the highly crystalline nature of sample along with orientation (002) direction. Furthermore, Raman spectroscopy shows two prominent phonon vibration modes of E(1)2g and A1g at ∼356 and ∼420 cm(-1), respectively, indicating high purity of material. The TEM analysis shows good crystalline quality of sample. The synthesized WS2 nanoparticle thin film based device shows good response to humidity and good photosensitivity along with good long-term stability of the device. It was found that the resistance of the films decreases with increasing relative humidity (RH). The maximum humidity sensitivity of 469% along with response time of ∼12 s and recovery time of ∼13 s were observed for the WS2 thin film humidity sensor device. In the case of photodetection, the response time of ∼51 s and recovery time of ∼88 s were observed with sensitivity ∼137% under white light illumination. Our results open up several avenues to grow other transition metal dichalcogenide nanoparticle thin film for large-area nanoelectronics as well as industrial applications.

Light, alpha, and Fe-peak element abundances in the galactic bulge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Christian I.; Rich, R. Michael; Kobayashi, Chiaki

2014-10-01

We present radial velocities and chemical abundances of O, Na, Mg, Al, Si, Ca, Cr, Fe, Co, Ni, and Cu for a sample of 156 red giant branch stars in two Galactic bulge fields centered near (l, b) = (+5.25,–3.02) and (0,–12). The (+5.25,–3.02) field also includes observations of the bulge globular cluster NGC 6553. The results are based on high-resolution (R ∼ 20,000), high signal-to-noise ration (S/N ≳ 70) FLAMES-GIRAFFE spectra obtained through the European Southern Observatory archive. However, we only selected a subset of the original observations that included spectra with both high S/N and that did notmore » show strong TiO absorption bands. This work extends previous analyses of this data set beyond Fe and the α-elements Mg, Si, Ca, and Ti. While we find reasonable agreement with past work, the data presented here indicate that the bulge may exhibit a different chemical composition than the local thick disk, especially at [Fe/H] ≳ –0.5. In particular, the bulge [α/Fe] ratios may remain enhanced to a slightly higher [Fe/H] than the thick disk, and the Fe-peak elements Co, Ni, and Cu appear enhanced compared to the disk. There is also some evidence that the [Na/Fe] (but not [Al/Fe]) trends between the bulge and local disk may be different at low and high metallicity. We also find that the velocity dispersion decreases as a function of increasing [Fe/H] for both fields, and do not detect any significant cold, high-velocity populations. A comparison with chemical enrichment models indicates that a significant fraction of hypernovae may be required to explain the bulge abundance trends, and that initial mass functions that are steep, top-heavy (and do not include strong outflow), or truncated to avoid including contributions from stars >40 M {sub ☉} are ruled out, in particular because of disagreement with the Fe-peak abundance data. For most elements, the NGC 6553 stars exhibit abundance trends nearly identical to comparable metallicity bulge

The bulge-disc decomposed evolution of massive galaxies at 1 < z < 3 in CANDELS

NASA Astrophysics Data System (ADS)

Bruce, V. A.; Dunlop, J. S.; McLure, R. J.; Cirasuolo, M.; Buitrago, F.; Bowler, R. A. A.; Targett, T. A.; Bell, E. F.; McIntosh, D. H.; Dekel, A.; Faber, S. M.; Ferguson, H. C.; Grogin, N. A.; Hartley, W.; Kocevski, D. D.; Koekemoer, A. M.; Koo, D. C.; McGrath, E. J.

2014-10-01

We present the results of a new and improved study of the morphological and spectral evolution of massive galaxies over the redshift range 1 < z < 3. Our analysis is based on a bulge-disc decomposition of 396 galaxies with M* > 1011 M⊙ uncovered from the Cosmic Assembly Near-infrared Deep Extragalactic Legacy Survey (CANDELS) Wide Field Camera 3 (WFC3)/IR imaging within the Cosmological Evolution Survey (COSMOS) and UKIRT Infrared Deep Sky Survey (UKIDSS) UDS survey fields. We find that, by modelling the H160 image of each galaxy with a combination of a de Vaucouleurs bulge (Sérsic index n = 4) and an exponential disc (n = 1), we can then lock all derived morphological parameters for the bulge and disc components, and successfully reproduce the shorter-wavelength J125, i814, v606 HST images simply by floating the magnitudes of the two components. This then yields sub-divided four-band HST photometry for the bulge and disc components which, with no additional priors, is well described by spectrophotometric models of galaxy evolution. Armed with this information, we are able to properly determine the masses and star formation rates for the bulge and disc components, and find that: (i) from z = 3 to 1 the galaxies move from disc dominated to increasingly bulge dominated, but very few galaxies are pure bulges/ellipticals by z = 1; (ii) while most passive galaxies are bulge dominated, and most star-forming galaxies disc dominated, 18 ± 5 per cent of passive galaxies are disc dominated, and 11 ± 3 per cent of star-forming galaxies are bulge dominated, a result which needs to be explained by any model purporting to connect star formation quenching with morphological transformations; (iii) there exists a small but significant population of pure passive discs, which are generally flatter than their star-forming counterparts (whose axial ratio distribution peaks at b/a ≃ 0.7); (iv) flatter/larger discs re-emerge at the highest star formation rates, consistent with

High throughput wafer defect monitor for integrated metrology applications in photolithography

NASA Astrophysics Data System (ADS)

Rao, Nagaraja; Kinney, Patrick; Gupta, Anand

2008-03-01

The traditional approach to semiconductor wafer inspection is based on the use of stand-alone metrology tools, which while highly sensitive, are large, expensive and slow, requiring inspection to be performed off-line and on a lot sampling basis. Due to the long cycle times and sparse sampling, the current wafer inspection approach is not suited to rapid detection of process excursions that affect yield. The semiconductor industry is gradually moving towards deploying integrated metrology tools for real-time "monitoring" of product wafers during the manufacturing process. Integrated metrology aims to provide end-users with rapid feedback of problems during the manufacturing process, and the benefit of increased yield, and reduced rework and scrap. The approach of monitoring 100% of the wafers being processed requires some trade-off in sensitivity compared to traditional standalone metrology tools, but not by much. This paper describes a compact, low-cost wafer defect monitor suitable for integrated metrology applications and capable of detecting submicron defects on semiconductor wafers at an inspection rate of about 10 seconds per wafer (or 360 wafers per hour). The wafer monitor uses a whole wafer imaging approach to detect defects on both un-patterned and patterned wafers. Laboratory tests with a prototype system have demonstrated sensitivity down to 0.3 µm on un-patterned wafers and down to 1 µm on patterned wafers, at inspection rates of 10 seconds per wafer. An ideal application for this technology is preventing photolithography defects such as "hot spots" by implementing a wafer backside monitoring step prior to exposing wafers in the lithography step.

Wafer Scale Integration of CMOS Chips for Biomedical Applications via Self-Aligned Masking.

PubMed

Uddin, Ashfaque; Milaninia, Kaveh; Chen, Chin-Hsuan; Theogarajan, Luke

2011-12-01

This paper presents a novel technique for the integration of small CMOS chips into a large area substrate. A key component of the technique is the CMOS chip based self-aligned masking. This allows for the fabrication of sockets in wafers that are at most 5 µm larger than the chip on each side. The chip and the large area substrate are bonded onto a carrier such that the top surfaces of the two components are flush. The unique features of this technique enable the integration of macroscale components, such as leads and microfluidics. Furthermore, the integration process allows for MEMS micromachining after CMOS die-wafer integration. To demonstrate the capabilities of the proposed technology, a low-power integrated potentiostat chip for biosensing implemented in the AMI 0.5 µm CMOS technology is integrated in a silicon substrate. The horizontal gap and the vertical displacement between the chip and the large area substrate measured after the integration were 4 µm and 0.5 µm, respectively. A number of 104 interconnects are patterned with high-precision alignment. Electrical measurements have shown that the functionality of the chip is not affected by the integration process.

The Split Red Clump of the Galactic Bulge from OGLE-III

NASA Astrophysics Data System (ADS)

Nataf, D. M.; Udalski, A.; Gould, A.; Fouqué, P.; Stanek, K. Z.

2010-09-01

The red clump (RC) is found to be split into two components along several sightlines toward the Galactic bulge. This split is detected with high significance toward the areas (-3.5 < l < 1, b < -5) and (l, b) = (0, + 5.2), i.e., along the bulge minor axis and at least 5 deg off the plane. The fainter (hereafter "main") component is the one that more closely follows the distance-longitude relation of the bulge RC. The main component is ~0.5 mag fainter than the secondary component and with an overall approximately equal population. For sightlines further from the plane, the difference in brightness increases, and more stars are found in the secondary component than in the main component. The two components have very nearly equal (V - I) color.

The Age of the Young Bulge-like Population in the Stellar System Terzan 5: Linking the Galactic Bulge to the High-z Universe

NASA Astrophysics Data System (ADS)

Ferraro, F. R.; Massari, D.; Dalessandro, E.; Lanzoni, B.; Origlia, L.; Rich, R. M.; Mucciarelli, A.

2016-09-01

The Galactic bulge is dominated by an old, metal-rich stellar population. The possible presence and the amount of a young (a few gigayears old) minor component is one of the major issues debated in the literature. Recently, the bulge stellar system Terzan 5 was found to harbor three sub-populations with iron content varying by more than one order of magnitude (from 0.2 up to two times the solar value), with chemical abundance patterns strikingly similar to those observed in bulge field stars. Here we report on the detection of two distinct main-sequence turnoff points in Terzan 5, providing the age of the two main stellar populations: 12 Gyr for the (dominant) sub-solar component and 4.5 Gyr for the component at super-solar metallicity. This discovery classifies Terzan 5 as a site in the Galactic bulge where multiple bursts of star formation occurred, thus suggesting a quite massive progenitor possibly resembling the giant clumps observed in star-forming galaxies at high redshifts. This connection opens a new route of investigation into the formation process and evolution of spheroids and their stellar content. Based on data obtained with (1) the ESA/NASA HST, under programs GO-14061, GO-12933, GO-10845, (2) the Very Large Telescope of the European Southern Observatory during the Science Verification of the camera MAD; (3) the W.M. Keck Observatory, which is operated as a scientific partnership among the California Institute of Technology, the University of California and NASA.

Wafer hot spot identification through advanced photomask characterization techniques

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; McMurran, Jeff; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2016-10-01

As device manufacturers progress through advanced technology nodes, limitations in standard 1-dimensional (1D) mask Critical Dimension (CD) metrics are becoming apparent. Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that the classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on subresolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. These items are not quantifiable with the 1D metrology techniques of today. Likewise, the mask maker needs advanced characterization methods in order to optimize the mask process to meet the wafer lithographer's needs. These advanced characterization metrics are what is needed to harmonize mask and wafer processes for enhanced wafer hot spot analysis. In this paper, we study advanced mask pattern characterization techniques and their correlation with modeled wafer performance.

Optima XE Single Wafer High Energy Ion Implanter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Satoh, Shu; Ferrara, Joseph; Bell, Edward

2008-11-03

The Optima XE is the first production worthy single wafer high energy implanter. The new system combines a state-of-art single wafer endstation capable of throughputs in excess of 400 wafers/hour with a production-proven RF linear accelerator technology. Axcelis has been evolving and refining RF Linac technology since the introduction of the NV1000 in 1986. The Optima XE provides production worthy beam currents up to energies of 1.2 MeV for P{sup +}, 2.9 MeV for P{sup ++}, and 1.5 MeV for B{sup +}. Energies as low as 10 keV and tilt angles as high as 45 degrees are also available., allowingmore » the implanter to be used for a wide variety of traditional medium current implants to ensure high equipment utilization. The single wafer endstation provides precise implant angle control across wafer and wafer to wafer. In addition, Optima XE's unique dose control system allows compensation of photoresist outgassing effects without relying on traditional pressure-based methods. We describe the specific features, angle control and dosimetry of the Optima XE and their applications in addressing the ever-tightening demands for more precise process controls and higher productivity.« less

Micro-miniature gas chromatograph column disposed in silicon wafers

DOEpatents

Yu, Conrad M.

2000-01-01

A micro-miniature gas chromatograph column is fabricated by forming matching halves of a circular cross-section spiral microcapillary in two silicon wafers and then bonding the two wafers together using visual or physical alignment methods. Heating wires are deposited on the outside surfaces of each wafer in a spiral or serpentine pattern large enough in area to cover the whole microcapillary area inside the joined wafers. The visual alignment method includes etching through an alignment window in one wafer and a precision-matching alignment target in the other wafer. The two wafers are then bonded together using the window and target. The physical alignment methods include etching through vertical alignment holes in both wafers and then using pins or posts through corresponding vertical alignment holes to force precision alignment during bonding. The pins or posts may be withdrawn after curing of the bond. Once the wafers are bonded together, a solid phase of very pure silicone is injected in a solution of very pure chloroform into one end of the microcapillary. The chloroform lowers the viscosity of the silicone enough that a high pressure hypodermic needle with a thumbscrew plunger can force the solution into the whole length of the spiral microcapillary. The chloroform is then evaporated out slowly to leave the silicone behind in a deposit.

Characterization of silicon-on-insulator wafers

NASA Astrophysics Data System (ADS)

Park, Ki Hoon

The silicon-on-insulator (SOI) is attracting more interest as it is being used for an advanced complementary-metal-oxide-semiconductor (CMOS) and a base substrate for novel devices to overcome present obstacles in bulk Si scaling. Furthermore, SOI fabrication technology has improved greatly in recent years and industries produce high quality wafers with high yield. This dissertation investigated SOI material properties with simple, yet accurate methods. The electrical properties of as-grown wafers such as electron and hole mobilities, buried oxide (BOX) charges, interface trap densities, and carrier lifetimes were mainly studied. For this, various electrical measurement techniques were utilized such as pseudo-metal-oxide-semiconductor field-effect-transistor (PseudoMOSFET) static current-voltage (I-V) and transient drain current (I-t), Hall effect, and MOS capacitance-voltage/capacitance-time (C-V/C-t). The electrical characterization, however, mainly depends on the pseudo-MOSFET method, which takes advantage of the intrinsic SOI structure. From the static current-voltage and pulsed measurement, carrier mobilities, lifetimes and interface trap densities were extracted. During the course of this study, a pseudo-MOSFET drain current hysteresis regarding different gate voltage sweeping directions was discovered and the cause was revealed through systematic experiments and simulations. In addition to characterization of normal SOI, strain relaxation of strained silicon-on-insulator (sSOI) was also measured. As sSOI takes advantage of wafer bonding in its fabrication process, the tenacity of bonding between the sSOI and the BOX layer was investigated by means of thermal treatment and high dose energetic gamma-ray irradiation. It was found that the strain did not relax with processes more severe than standard CMOS processes, such as anneals at temperature as high as 1350 degree Celsius.

The Bulging Behavior of Thick-Walled 6063 Aluminum Alloy Tubes Under Double-Sided Pressures

NASA Astrophysics Data System (ADS)

Cui, Xiao-Lei; Wang, Xiao-Song; Yuan, Shi-Jian

2015-05-01

To make further exploration on the deformation behavior of tube under double-sided pressures, the thick-walled 6063 aluminum alloy tubes with an outer diameter of 65 mm and an average thickness of 7.86 mm have been used to be bulged under the combined action of internal and external pressures. In the experiment, two ends of the thick-walled tubes were fixed using the tooth and groove match. Three levels of external pressure (0 MPa, 40 MPa, and 80 MPa), in conjunction with the internal pressure, were applied on the tube outside and inside simultaneously. The effect of external pressure on the bulging behavior of the thick-walled tubes, such as the limiting expansion ratio, the bulging zone profile, and the thickness distribution, has been investigated. It is shown that the limiting expansion ratio, the bulging zone profile, and the thickness distribution in the homogeneous bulging area are all insensitive to the external pressure. However, the external pressure can make the thick-walled tube achieve a thinner wall at the fracture area. It reveals that the external pressure can only improve the fracture limit of the thick-walled 6063 tubes, but it has very little effect on their homogeneous bulging behavior. It might be because the external pressure can only increase the magnitude of the hydrostatic pressure for the tube but has no effect on the Lode parameter.

Wafer-level packaging with compression-controlled seal ring bonding

DOEpatents

Farino, Anthony J

2013-11-05

A device may be provided in a sealed package by aligning a seal ring provided on a first surface of a first semiconductor wafer in opposing relationship with a seal ring that is provided on a second surface of a second semiconductor wafer and surrounds a portion of the second wafer that contains the device. Forcible movement of the first and second wafer surfaces toward one another compresses the first and second seal rings against one another. A physical barrier against the movement, other than the first and second seal rings, is provided between the first and second wafer surfaces.

The imprints of bars on the vertical stellar population gradients of galactic bulges

NASA Astrophysics Data System (ADS)

Molaeinezhad, A.; Falcón-Barroso, J.; Martínez-Valpuesta, I.; Khosroshahi, H. G.; Vazdekis, A.; La Barbera, F.; Peletier, R. F.; Balcells, M.

2017-05-01

This is the second paper of a series aimed to study the stellar kinematics and population properties of bulges in highly inclined barred galaxies. In this work, we carry out a detailed analysis of the stellar age, metallicity and [Mg/Fe] of 28 highly inclined (I > 65°) disc galaxies, from S0 to S(B)c, observed with the SAURON integral-field spectrograph. The sample is divided into two clean samples of barred and unbarred galaxies, on the basis of the correlation between the stellar velocity and h3 profiles, as well as the level of cylindrical rotation within the bulge region. We find that while the mean stellar age, metallicity and [Mg/Fe] in the bulges of barred and unbarred galaxies are not statistically distinct, the [Mg/Fe] gradients along the minor axis (away from the disc) of barred galaxies are significantly different than those without bars. For barred galaxies, stars that are vertically further away from the mid-plane are in general more [Mg/Fe]-enhanced and thus the vertical gradients in [Mg/Fe] for barred galaxies are mostly positive, while for unbarred bulges the [Mg/Fe] profiles are typically negative or flat. This result, together with the old populations observed in the barred sample, indicates that bars are long-lasting structures, and therefore are not easily destroyed. The marked [Mg/Fe] differences with the bulges of unbarred galaxies indicate that different formation/evolution scenarios are required to explain their build-up, and emphasizes the role of bars in redistributing stellar material in the bulge-dominated regions.

Spectroscopic decomposition of NGC 3521: unveiling the properties of the bulge and disc

NASA Astrophysics Data System (ADS)

Coccato, Lodovico; Fabricius, Maximilian H.; Saglia, Roberto P.; Bender, Ralf; Erwin, Peter; Drory, Niv; Morelli, Lorenzo

2018-06-01

We study the kinematics and the stellar populations of the bulge and disc of the spiral galaxy NGC 3521. At each position in the field of view, we separate the contributions of the bulge and the disc from the total observed spectrum and study their kinematics, age, and metallicities independently. Their properties are clearly distinct: the bulge rotates more slowly, has a higher velocity dispersion, and is less luminous than the disc. We identify three main populations of stars in NGC 3521: old (≥7 Gyr), intermediate (≈3 Gyr), and young (≤1 Gyr). The mass and light of NGC 3521 are dominated by the intermediate stellar population. The youngest population contributes mostly to the disc component and its contribution increases with radius. We also study the luminosity-weighed properties of the stars in NGC 3521. Along the photometric major axis, we find (i) no age gradient for the stars in the bulge, and a negative age gradient for the stars in the disc; (ii) negative metallicity gradients and subsolar α-enhancement for both the bulge and the disc. We propose the following picture for the formation of NGC 3521: initial formation a long time ago (≥7 Gyr), followed by a second burst of star formation or a merger (≈3 Gyr ago), which contributed predominantly to the mass build-up of the bulge. Recently (≤1 Gyr), the disc of NGC 3521 experienced an additional episode of star formation that started in the innermost regions.

BULGES OF NEARBY GALAXIES WITH SPITZER: THE GROWTH OF PSEUDOBULGES IN DISK GALAXIES AND ITS CONNECTION TO OUTER DISKS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fisher, David B.; Drory, Niv; Fabricius, Maximilian H.

2009-05-20

We study star formation rates (SFRs) and stellar masses in bulges of nearby disk galaxies. For this we construct a new SFR indicator that linearly combines data from the Spitzer Space Telescope and the Galaxy Evolution Explorer. All bulges are found to be forming stars irrespective of bulge type (pseudobulge or classical bulge). At present-day SFR the median pseudobulge could have grown the present-day stellar mass in 8 Gyr. Classical bulges have the lowest specific SFR implying a growth times that are longer than a Hubble time, and thus the present-day SFR does not likely play a major role inmore » the evolution of classical bulges. In almost all galaxies in our sample the specific SFR (SFR per unit stellar mass) of the bulge is higher than that of the outer disk. This suggests that almost all galaxies are increasing their B/T through internal star formation. The SFR in pseudobulges correlates with their structure. More massive pseudobulges have higher SFR density, this is consistent with that stellar mass being formed by moderate, extended star formation. Bulges in late-type galaxies have similar SFRs as pseudobulges in intermediate-type galaxies, and are similar in radial size. However, they are deficient in mass; thus, they have much shorter growth times, {approx}2 Gyr. We identify a class of bulges that have nuclear morphology similar to pseudobulges, significantly lower specific SFR than pseudobulges, and are closer to classical bulges in structural parameter correlations. These are possibly composite objects, evolved pseudobulges or classical bulges experiencing transient, enhanced nuclear star formation. Our results are consistent with a scenario in which bulge growth via internal star formation is a natural, and near ubiquitous phenomenon in disk galaxies. Those galaxies with large classical bulges are not affected by the in situ bulge growth, likely because the majority of their stellar mass comes from some other phenomenon. Yet, those galaxies without

Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fong, Theodore E.

2013-05-06

The technical paper summarizes the project work conducted in the development of Kerf-Free silicon wafering equipment for silicon solar wafering. This new PolyMax technology uses a two step process of implantation and cleaving to exfoliate 50um to 120um wafers with thicknesses ranging from 50um to 120um from a 125mm or 156mm pseudo-squared silicon ingot. No kerf is generated using this method of wafering. This method of wafering contrasts with the current method of making silicon solar wafers using the industry standard wire saw equipment. The report summarizes the activity conducted by Silicon Genesis Corporation in working to develop this technologymore » further and to define the roadmap specifications for the first commercial proto-type equipment for high volume solar wafer manufacturing using the PolyMax technology.« less

Gamma Rays from the Galactic Bulge and Large Extra Dimensions

NASA Astrophysics Data System (ADS)

Cassé, Michel; Paul, Jacques; Bertone, Gianfranco; Sigl, Günter

2004-03-01

An intriguing feature of extra dimensions is the possible production of Kaluza Klein gravitons by nucleon-nucleon bremsstrahlung, in the course of core collapse of massive stars, with gravitons then being trapped around the newly born neutron stars and decaying into two gamma rays, making neu­tron stars gamma-ray sources. We strengthen the limits on the radius of compactification of extra dimensions for a small number n of them, or alternatively the fundamental scale of quantum gravity, considering the gamma-ray emission of the whole population of neutron stars sitting in the Galactic bulge, instead of the closest member of this category. For n=1 the constraint on the compactification radius is R<400 μm.

Applications of the silicon wafer direct-bonding technique to electron devices

NASA Astrophysics Data System (ADS)

Furukawa, K.; Nakagawa, A.

1990-01-01

A silicon wafer direct-bonding (SDB) technique has been developed. A pair of bare silicon wafers, as well as an oxidized wafer pair, are bonded throughout the wafer surfaces without any bonding material. Conventional semiconductor device processes can be used for the bonded wafers, since the bonded interface is stable thermally, chemically, mechanically and electrically. Therefore, the SDB technique is very attractive, and has been applied to several kinds of electron devices. Bare silicon to bare silicon bonding is an alternative for epitaxial growth. A thick, high quality and high resistivity layer on a low resistivity substrate was obtained without autodoping. 1800 V insulated gate bipolar transistors were developed using these SDB wafers. No electrical resistance was observed at the bonded bare silicon interfaces. If oxidized wafers are bonded, the two wafers are electrically isolated, providing silicon on insulator (SOI) wafers. Dielectrically isolated photodiode arrays were fabricated on the SOI wafers and 500 V power IC's are now being developed.

Structure/cleavage-based insights into helical perturbations at bulge sites within T. thermophilus Argonaute silencing complexes

PubMed Central

Sheng, Gang; Gogakos, Tasos; Wang, Jiuyu; Zhao, Hongtu; Serganov, Artem; Juranek, Stefan

2017-01-01

Abstract We have undertaken a systematic structural study of Thermus thermophilus Argonaute (TtAgo) ternary complexes containing single-base bulges positioned either within the seed segment of the guide or target strands and at the cleavage site. Our studies establish that single-base bulges 7T8, 5A6 and 4A5 on the guide strand are stacked-into the duplex, with conformational changes localized to the bulge site, thereby having minimal impact on the cleavage site. By contrast, single-base bulges 6’U7’ and 6’A7’ on the target strand are looped-out of the duplex, with the resulting conformational transitions shifting the cleavable phosphate by one step. We observe a stable alignment for the looped-out 6’N7’ bulge base, which stacks on the unpaired first base of the guide strand, with the looped-out alignment facilitated by weakened Watson–Crick and reversed non-canonical flanking pairs. These structural studies are complemented by cleavage assays that independently monitor the impact of bulges on TtAgo-mediated cleavage reaction. PMID:28911094

Formation of the Lunar Fossil Bulges and Its Implication for the Early Earth and Moon

NASA Astrophysics Data System (ADS)

Qin, Chuan; Zhong, Shijie; Phillips, Roger

2018-02-01

First recognized by Laplace over two centuries ago, the Moon's present tidal-rotational bulges are significantly larger than hydrostatic predictions. They are likely relics of a former hydrostatic state when the Moon was closer to the Earth and had larger bulges, and they were established when stresses in a thickening lunar lithosphere could maintain the bulges against hydrostatic adjustment. We formulate the first dynamically self-consistent model of this process and show that bulge formation is controlled by the relative timing of lithosphere thickening and lunar orbit recession. Viable solutions indicate that lunar bulge formation was a geologically slow process lasting several hundred million years, that the process was complete about 4 Ga when the Moon-Earth distance was less than 32 Earth radii, and that the Earth in Hadean was significantly less dissipative to lunar tides than during the last 4 Gyr, possibly implying a frozen hydrosphere due to the fainter young Sun.

Ongoing Massive Star Formation in the Bulge of M51

NASA Astrophysics Data System (ADS)

Lamers, H. J. G. L. M.; Panagia, N.; Scuderi, S.; Romaniello, M.; Spaans, M.; de Wit, W. J.; Kirshner, R.

2002-02-01

We present a study of Hubble Space Telescope Wide Field Planetary Camera 2 observations of the inner kiloparsec of the interacting galaxy M51 in six bands from 2550 to 8140 Å. The images show an oval-shaped area (which we call the ``bulge'') of about 11''×16'', or 450×650 pc, around the nucleus that is dominated by a smooth ``yellow/reddish'' background population with overimposed dust lanes. These dust lanes are the inner extensions of the spiral arms. The extinction properties, derived in four fields in and outside dust lanes, are similar to the Galactic extinction law. The reddish stellar population has an intrinsic color of (B-V)0~=1.0, suggesting an age in excess of 5 Gyr. We found 30 bright pointlike sources in the bulge of M51, i.e., within 110-350 pc from the nucleus. The point sources have 21.4

Central Stellar Mass Deficits in the Bulges of Local Lenticular Galaxies

NASA Astrophysics Data System (ADS)

Dullo, B. T.

2014-03-01

The centers of giant galaxies display stellar mass deficits (Mdef) which are thought to be a signature left by inspiraling supermassive black hole (SMBH) binaries that are formed in post-merger galaxies. We quantify these deficits for a sample of five luminous lenticular galaxies with bulge magnitude MV ≲ -21 mag and find Mdef ≍ 0.5 - 2MBH (black hole mass). Contrary to the traditionally proposed lenticular galaxy formation mechanisms such as ram-pressure stripping and galaxy harassment, the mass deficits in these galaxies suggest a two stage inside-out process for their assembly. That is, their bulges may have formed through “dry” major-merger events involving SMBHs while their disk was subsequently built up via cold gas accretion scenarios. Interestingly, these bulges have sizes and mass densities comparable to the compact massive galaxies found at z ˜ 2.

Tracing the Chemical Evolution of Metal-rich Galactic Bulge Globular Clusters

NASA Astrophysics Data System (ADS)

Munoz Gonzalez, Cesar; Saviane, Ivo; Geisler, Doug; Villanova, Sandro

2018-01-01

We present in this poster the metallicity characterization of the four metal rich Bulge Galactic Gobular Clusters, which have controversial metallicities. We analyzed our high-resolution spectra (using UVES-580nm and GIRAFFE-HR13 setups) for a large sample of RGB/AGB targets in each cluster in order to measure their metallicity and prove or discard the iron spread hypothesis. We have also characterized chemically stars with potentially different iron content by measuring light (O, Na, Mg, Al), alpha (Si, Ca, Ti), iron–peak (V, Cr, Ni, Mn) and s and r process (Y, Zr, Ba, Eu) elements. We have identified possible channels responsible for the chemical heterogeneity of the cluster populations, like AGB or massive fast-rotating stars contamination, or SN explosion. Also, we have analyzed the origin and evolution of these bulge GCs and their connection with the bulge itself.

Galactic bulge preferred over dark matter for the Galactic centre gamma-ray excess

NASA Astrophysics Data System (ADS)

Macias, Oscar; Gordon, Chris; Crocker, Roland M.; Coleman, Brendan; Paterson, Dylan; Horiuchi, Shunsaku; Pohl, Martin

2018-05-01

An anomalous gamma-ray excess emission has been found in the Fermi Large Area Telescope data1 covering the centre of the Galaxy2,3. Several theories have been proposed for this `Galactic centre excess'. They include self-annihilation of dark-matter particles4, an unresolved population of millisecond pulsars5, an unresolved population of young pulsars6, or a series of burst events7. Here, we report on an analysis that exploits hydrodynamical modelling to register the position of interstellar gas associated with diffuse Galactic gamma-ray emission. We find evidence that the Galactic centre excess gamma rays are statistically better described by the stellar over-density in the Galactic bulge and the nuclear stellar bulge, rather than a spherical excess. Given its non-spherical nature, we argue that the Galactic centre excess is not a dark-matter phenomenon but rather associated with the stellar population of the Galactic bulge and the nuclear bulge.

Wafer-level vacuum/hermetic packaging technologies for MEMS

NASA Astrophysics Data System (ADS)

Lee, Sang-Hyun; Mitchell, Jay; Welch, Warren; Lee, Sangwoo; Najafi, Khalil

2010-02-01

An overview of wafer-level packaging technologies developed at the University of Michigan is presented. Two sets of packaging technologies are discussed: (i) a low temperature wafer-level packaging processes for vacuum/hermeticity sealing, and (ii) an environmentally resistant packaging (ERP) technology for thermal and mechanical control as well as vacuum packaging. The low temperature wafer-level encapsulation processes are implemented using solder bond rings which are first patterned on a cap wafer and then mated with a device wafer in order to encircle and encapsulate the device at temperatures ranging from 200 to 390 °C. Vacuum levels below 10 mTorr were achieved with yields in an optimized process of better than 90%. Pressures were monitored for more than 4 years yielding important information on reliability and process control. The ERP adopts an environment isolation platform in the packaging substrate. The isolation platform is designed to provide low power oven-control, vibration isolation and shock protection. It involves batch flip-chip assembly of a MEMS device onto the isolation platform wafer. The MEMS device and isolation structure are encapsulated at the wafer-level by another substrate with vertical feedthroughs for vacuum/hermetic sealing and electrical signal connections. This technology was developed for high performance gyroscopes, but can be applied to any type of MEMS device.

Binding of pixantrone to DNA at CpA dinucleotide sequences and bulge structures.

PubMed

Konda, Shyam K; Wang, Haiqiang; Cutts, Suzanne M; Phillips, Don R; Collins, J Grant

2015-06-07

The binding of the anti-cancer drug pixantrone to three oligonucleotide sequences, d(TCATATGA)2, d(CCGAGAATTCCGG)2 {double bulge = DB} and the non-self complementary d(TACGATGAGTA) : d(TACCATCGTA) {single bulge = SB}, has been studied by NMR spectroscopy and molecular modelling. The upfield shifts observed for the aromatic resonances of pixantrone upon addition of the drug to each oligonucleotide confirmed the drug bound by intercalation. For the duplex sequence d(TCATATGA)2, NOEs were observed from the pixantrone aromatic H7/8 and aliphatic Ha/Hb protons to the H6/H8 and H1' protons of the C2, A3, T6 and G7 nucleotides, demonstrating that pixantrone preferentially binds at the symmetric CpA sites. However, weaker NOEs observed to various protons from the T4 and A5 residues indicated alternative minor binding sites. NOEs from the H7/H8 and Ha/Hb protons to both major (H6/H8) and minor groove (H1') protons indicated approximately equal proportions of intercalation was from the major and minor groove at the CpA sites. Intermolecular NOEs were observed between the H7/H8 and H4 protons of pixantrone and the A4H1' and G3H1' protons of the oligonucleotide that contains two symmetrically related bulge sites (DB), indicative of binding at the adenine bulge sites. For the oligonucleotide that only contains a single bulge site (SB), NOEs were observed from pixantrone protons to the SB G7H1', A8H1' and G9H1' protons, confirming that the drug bound selectively at the adenine bulge site. A molecular model of pixantrone-bound SB could be constructed with the drug bound from the minor groove at the A8pG9 site that was consistent with the observed NMR data. The results demonstrate that pixantrone preferentially intercalates at adenine bulge sites, compared to duplex DNA, and predominantly from the minor groove.

Laser furnace and method for zone refining of semiconductor wafers

NASA Technical Reports Server (NTRS)

Griner, Donald B. (Inventor); zur Burg, Frederick W. (Inventor); Penn, Wayne M. (Inventor)

1988-01-01

A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

Atomic mechanism for the growth of wafer-scale single-crystal graphene: theoretical perspective and scanning tunneling microscopy investigations

NASA Astrophysics Data System (ADS)

Niu, Tianchao; Zhang, Jialin; Chen, Wei

2017-12-01

Chemical vapor deposition (CVD) is the most promising approach for producing low-cost, high-quality, and large area graphene. Revealing the graphene growth mechanism at the atomic-scale is of great importance for realizing single crystal graphene (SCG) over wafer scale. Density functional theoretical (DFT) calculations are playing an increasingly important role in revealing the structure of the most stable carbon species, understanding the evolution processes, and disclosing the active sites. Scanning tunneling microscopy (STM) is a powerful surface characterization tool to illustrate the real space distribution and atomic structures of growth intermediates during the CVD process. Combining them together can provide valuable information to improve the atomically controlled growth of SCG. Starting from a basic concept of the substrate effect on realizing SCG, this review covers the progress made in theoretical investigations on various carbon species during graphene growth on different transition metal substrates, in the STM study of the structural intermediates on transition metal surfaces, and in synthesizing graphene nanoribbons with atomic-precise width and edge structure, ending with a perspective on the future development of 2D materials beyond graphene.

A new look at the kinematics of the bulge from an N-body model

NASA Astrophysics Data System (ADS)

Gómez, A.; Di Matteo, P.; Stefanovitch, N.; Haywood, M.; Combes, F.; Katz, D.; Babusiaux, C.

2016-05-01

By using an N-body simulation of a bulge that was formed via a bar instability mechanism, we analyse the imprints of the initial (I.e. before bar formation) location of stars on the bulge kinematics, in particular on the heliocentric radial velocity distribution of bulge stars. Four different latitudes were considered: b = -4°, -6°, -8°, and -10°, along the bulge minor axis as well as outside it, at l = ± 5° and l = ± 10°. The bulge X-shaped structure comprises stars that formed in the disk at different locations. Stars formed in the outer disk, beyond the end of the bar, which are part of the boxy peanut-bulge structure may show peaks in the velocity distributions at positive and negative heliocentric radial velocities with high absolute values that can be larger than 100 km s-1, depending on the observed direction. In some cases the structure of the velocity field is more complex and several peaks are observed. Stars formed in the inner disk, the most numerous, contribute predominantly to the X-shaped structure and present different kinematic characteristics. They display a rather symmetric velocity distribution and a smaller fraction of high-velocity stars. The stellar stream motion, which is induced by the bar changes with the star initial position, can reach more than 40 km s-1 for stars that originated in the external disk, depending on the observed direction. Otherwise it is smaller than approximately 20 km s-1. In all cases, it decreases from b = -4° to -10°. Our results may enable us to interpret the cold high-velocity peak observed in the APOGEE commissioning data, as well as the excess of high-velocity stars in the near and far arms of the X-shaped structure at l = 0° and b = -6°. When compared with real data, the kinematic picture becomes more complex due to the possible presence in the observed samples of classical bulge and/or thick disk stars. Overall, our results point to the existence of complex patterns and structures in the bulge

A case against an X-shaped structure in the Milky Way young bulge

NASA Astrophysics Data System (ADS)

López-Corredoira, Martín

2016-09-01

Context. A number of recent papers have claimed the discovery of an X-shape structure in the bulge of our Galaxy in the population of the red clumps. Aims: We endeavor to analyze the stellar density of bulge stars in the same regions using a different stellar population that is characteristic of the young bulge (≲ 5 Gyr). Particularly, we use F0-F5 main-sequence stars with distances derived through photometric parallax. Methods: We extract these stars from extinction-corrected color-magnitude diagrams in the near-infrared of VISTA-VVV data in some bulge regions and calculate the densities along the line of sight. We take the uncertaintity in the photometric parallax and the contamination of other sources into account, and we see that these errors do not avoid the detection of a possible double peak along some lines of sight as expected for a X-shape bulge if it existed. Results: Only a single peak in the density distribution along the line of sight is observed, so apparently there is no X-shape structure for this population of stars. Nonetheless, the effects of the dispersion of absolute magnitudes in the selected population might be an alternative explanation, although in principle these effects are insufficient to explain this lack of double peak according to our calculations. Conclusions: The results of the present paper do not demonstrate that previous claims of X-shaped bulge using only red clump stars are incorrect, but there are apparently some puzzling questions if we want to maintain the validity of both the red-clump results and the results of this paper.

A catalog of polychromatic bulge-disc decompositions of ˜17.600 galaxies in CANDELS

NASA Astrophysics Data System (ADS)

Dimauro, Paola; Huertas-Company, Marc; Daddi, Emanuele; Pérez-González, Pablo G.; Bernardi, Mariangela; Barro, Guillermo; Buitrago, Fernando; Caro, Fernando; Cattaneo, Andrea; Dominguez-Sánchez, Helena; Faber, Sandra M.; Häußler, Boris; Kocevski, Dale D.; Koekemoer, Anton M.; Koo, David C.; Lee, Christoph T.; Mei, Simona; Margalef-Bentabol, Berta; Primack, Joel; Rodriguez-Puebla, Aldo; Salvato, Mara; Shankar, Francesco; Tuccillo, Diego

2018-05-01

Understanding how bulges grow in galaxies is critical step towards unveiling the link between galaxy morphology and star-formation. To do so, it is necessary to decompose large sample of galaxies at different epochs into their main components (bulges and discs). This is particularly challenging, especially at high redshifts, where galaxies are poorly resolved. This work presents a catalog of bulge-disc decompositions of the surface brightness profiles of ˜17.600 H-band selected galaxies in the CANDELS fields (F160W < 23, 0 < z < 2) in 4 to 7 filters covering a spectral range of 430 - 1600nm. This is the largest available catalog of this kind up to z = 2. By using a novel approach based on deep-learning to select the best model to fit, we manage to control systematics arising from wrong model selection and obtain less contaminated samples than previous works. We show that the derived structural properties are within ˜10 - 20% of random uncertainties. We then fit stellar population models to the decomposed SEDs (Spectral Energy Distribution) of bulges and discs and derive stellar masses (and stellar mass bulge-to-total ratios) as well as rest-frame colors (U,V,J) for bulges and discs separately. All data products are publicly released with this paper and through the web page https://lerma.obspm.fr/huertas/form_CANDELS and will be used for scientific analysis in forthcoming works.

Mira variables in the Galactic Bulge .

NASA Astrophysics Data System (ADS)

Groenewegen, M. A. T.; Blommaert, J. A. D. L.

The 222 000 I-band light curves of variable stars detected by the OGLE-II survey in the direction of the Galactic Bulge have been fitted and have been correlated with the DENIS and 2MASS databases. Results are presented for 2691 objects with I-band semi-amplitude larger than 0.45 magnitude, corresponding to classical Mira variables. The Mira period distribution of 5 fields at similar longitude but spanning latitudes from -1.2 to -5.8 are statistically indistinguisable indicating similar populations with initial masses of 1.5-2 M⊙ (corresponding to ages of 1-3 Gyr). A field at similar longitude at b = -0.05 from Glass et al. (2001) does show a significantly different period distribution, indicating the presence of a younger population of 2.5-3 M⊙ and ages below 1 Gyr. The K-band period-luminosity relation is presented for the whole sample, and for sub-fields. Simulations are carried out to show that the observations are naturally explained using the model of disk and bulge stars of Binney et al. (1997), for a viewing angle (major-axis Bar - axis perpendicular to the line-of-sight to the Galactic Centre) of 43 ± 17 degrees. A comparison is made with similar objects in the Magellanic Clouds, studied in a previous paper. The slope of the PL-relation in the Bulge and the MCs agree within the errorbars. Assuming the zero point does not depend on metallicity, a distance modulus difference of 3.72 between Bulge and LMC is derived. This implies a LMC DM of 18.21 for an assumed distance to the Galactic Centre (GC) of 7.9 kpc, or, assuming a LMC DM of 18.50, a distance to the GC of 9.0 kpc. From the results in Groenewegen (2004) it is found for carbon-rich Miras that the PL-relation implies a relative SMC-LMC DM of 0.38, assuming no metallicity dependence. This is somewhat smaller than the often quoted value near 0.50. Following theoretical work by Wood (1990) a metallicity term of the form M_K ˜ beta log Z is introduced. If a relative SMC-LMC DM of 0.50 is imposed

Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fang, Fang; Vaid, Alok; Vinslava, Alina; Casselberry, Richard; Mishra, Shailendra; Dixit, Dhairya; Timoney, Padraig; Chu, Dinh; Porter, Candice; Song, Da; Ren, Zhou

2018-03-01

It is getting more important to monitor all aspects of influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. Meanwhile, we took a dive in pursuing "measuring what matters" and challenged ourselves for more aspects of signals acquired in actual process conditions. Among these factors which are considered subtle previously, we identified Temperature, especially electrostatic chuck (ESC) Temperature measurement in real etch process conditions have direct correlation to in-line measurements. In this work, we used SensArray technique (EtchTemp-SE wafer) to measure ESC temperature profile on a 300mm wafer with plasma turning on to reproduce actual temperature pattern on wafers in real production process conditions. In field applications, we observed substantial correlation between ESC temperature and in-line optical metrology measurements and since temperature is a process factor that can be tuning through set-temperature modulations, we have identified process knobs with known impact on physical profile variations. Furthermore, ESC temperature profile on a 300mm wafer is configured as multiple zones upon radius and SensArray measurements mechanism could catch such zonal distribution as well, which enables detailed temperature modulations targeting edge ring only where most of chips can be harvested and critical zone for yield enhancement. Last but not least, compared with control reference (ESC Temperature in static plasma-off status), we also get additional factors to investigate in chamber-to-chamber matching study and make process tool fleet match on the basis really matters in production. KLA-Tencor EtchTemp-SE wafer enables Plasma On wafer temperature monitoring of silicon etch process. This wafer is wireless and has 65 sensors with measurement range from 20 to 140°C. the wafer is designed to run in real production recipe plasma on condition with maximum RF power up

Novel wafer stepper with violet LED light source

NASA Astrophysics Data System (ADS)

Ting, Yung-Chiang; Shy, Shyi-Long

2014-03-01

Novel wafer stepper by using contact or proximity printing will be developed, using violet LED light source to replace Hg Arc. lamp or laser. Mirror, filter and condenser lens for Hg Arc. Lamp or laser and reduction lens for projection printing can be discarded. Reliability and manufacturing cost of wafer stepper can be improved. Exposure result by using IP3600 resist and wafer stepper with violet LED light source (wave-length 360nm to 410 nm) will be obtained. This novel wafer stepper can be used for 3DIC, MEMS and bio-chip lithography application by using thin and thick resist with sub-micron to 100 micron thickness.

VizieR Online Data Catalog: OGLE II. VI photometry of Galactic Bulge (Udalski+, 2002)

NASA Astrophysics Data System (ADS)

Udalski, A.; Szymanski, M.; Kubiak, M.; Pietrzynski, G.; Soszynski, I.; Wozniak, P.; Zebrun, K.; Szewczyk, O.; Wyrzykowski, L.

2003-09-01

We present the VI photometric maps of the Galactic bulge. They contain VI photometry and astrometry of about 30 million stars from 49 fields of 0.225 square degree each in the Galactic center region. The data were collected during the second phase of the OGLE microlensing project. We discuss the accuracy of data and present color-magnitude diagrams of selected fields observed by OGLE in the Galactic bulge. The VI maps of the Galactic bulge are accessible electronically for the astronomical community from the OGLE Internet archive (2 data files).

Genesis Ultrapure Water Megasonic Wafer Spin Cleaner

NASA Technical Reports Server (NTRS)

Allton, Judith H.; Stansbery, Eileen K.; Calaway, Michael J.; Rodriquez, Melissa C.

2013-01-01

A device removes, with high precision, the majority of surface particle contamination greater than 1-micron-diameter in size from ultrapure semiconductor wafer materials containing implanted solar wind samples returned by NASA's Genesis mission. This cleaning device uses a 1.5-liter/minute flowing stream of heated ultrapure water (UPW) with 1- MHz oscillating megasonic pulse energy focused at 3 to 5 mm away from the wafer surface spinning at 1,000 to 10,000 RPM, depending on sample size. The surface particle contamination is removed by three processes: flowing UPW, megasonic cavitations, and centripetal force from the spinning wafer. The device can also dry the wafer fragment after UPW/megasonic cleaning by continuing to spin the wafer in the cleaning chamber, which is purged with flowing ultrapure nitrogen gas at 65 psi (.448 kPa). The cleaner also uses three types of vacuum chucks that can accommodate all Genesis-flown array fragments in any dimensional shape between 3 and 100 mm in diameter. A sample vacuum chuck, and the manufactured UPW/megasonic nozzle holder, replace the human deficiencies by maintaining a consistent distance between the nozzle and wafer surface as well as allowing for longer cleaning time. The 3- to 5-mm critical distance is important for the ability to remove particles by megasonic cavitations. The increased UPW sonication time and exposure to heated UPW improve the removal of 1- to 5-micron-sized particles.

On the orbits that generate the X-shape in the Milky Way bulge

NASA Astrophysics Data System (ADS)

Abbott, Caleb G.; Valluri, Monica; Shen, Juntai; Debattista, Victor P.

2017-09-01

The Milky Way (MW) bulge shows a boxy/peanut or X-shaped bulge (hereafter BP/X) when viewed in infrared or microwave bands. We examine orbits in an N-body model of a barred disc galaxy that is scaled to match the kinematics of the MW bulge. We generate maps of projected stellar surface density, unsharp masked images, 3D excess-mass distributions (showing mass outside ellipsoids), line-of-sight number count distributions, and 2D line-of-sight kinematics for the simulation as well as co-added orbit families, in order to identify the orbits primarily responsible for the BP/X shape. We estimate that between 19 and 23 per cent of the mass of the bar in this model is associated with the BP/X shape and that the majority of bar orbits contribute to this shape that is clearly seen in projected surface density maps and 3D excess mass for non-resonant box orbits, 'banana' orbits, 'fish/pretzel' orbits and 'brezel' orbits. Although only the latter two families (comprising 7.5 per cent of the total mass) show a distinct X-shape in unsharp masked images, we find that nearly all bar orbit families contribute some mass to the 3D BP/X-shape. All co-added orbit families show a bifurcation in stellar number count distribution with distance that resembles the bifurcation observed in red clump stars in the MW. However, only the box orbit family shows an increasing separation of peaks with increasing galactic latitude |b|, similar to that observed. Our analysis suggests that no single orbit family fully explains all the observed features associated with the MW's BP/X-shaped bulge, but collectively the non-resonant boxes and various resonant boxlet orbits contribute at different distances from the centre to produce this feature. We propose that since box orbits (which are the dominant population in bars) have three incommensurable orbital fundamental frequencies, their 3D shapes are highly flexible and, like Lissajous figures, this family of orbits is most easily able to adapt to

Quantitative phase measurement for wafer-level optics

NASA Astrophysics Data System (ADS)

Qu, Weijuan; Wen, Yongfu; Wang, Zhaomin; Yang, Fang; Huang, Lei; Zuo, Chao

2015-07-01

Wafer-level-optics now is widely used in smart phone camera, mobile video conferencing or in medical equipment that require tiny cameras. Extracting quantitative phase information has received increased interest in order to quantify the quality of manufactured wafer-level-optics, detect defective devices before packaging, and provide feedback for manufacturing process control, all at the wafer-level for high-throughput microfabrication. We demonstrate two phase imaging methods, digital holographic microscopy (DHM) and Transport-of-Intensity Equation (TIE) to measure the phase of the wafer-level lenses. DHM is a laser-based interferometric method based on interference of two wavefronts. It can perform a phase measurement in a single shot. While a minimum of two measurements of the spatial intensity of the optical wave in closely spaced planes perpendicular to the direction of propagation are needed to do the direct phase retrieval by solving a second-order differential equation, i.e., with a non-iterative deterministic algorithm from intensity measurements using the Transport-of-Intensity Equation (TIE). But TIE is a non-interferometric method, thus can be applied to partial-coherence light. We demonstrated the capability and disability for the two phase measurement methods for wafer-level optics inspection.

Wave-front propagation of rinsing flows on rotating semiconductor wafers

NASA Astrophysics Data System (ADS)

Frostad, John M.; Ylitalo, Andy; Walls, Daniel J.; Mui, David S. L.; Fuller, Gerald G.

2016-11-01

The semiconductor manufacturing industry is migrating to a cleaning technology that involves dispersing cleaning solutions onto a rotating wafer, similar to spin-coating. Advantages include a more continuous overall fabrication process, lower particle level, no cross contamination from the back side of a wafer, and less usage of harsh chemicals for a lower environmental impact. Rapid rotation of the wafer during rinsing can be more effective, but centrifugal forces can pull spiral-like ribbons of liquid radially outward from the advancing wave-front where particles can build up, causing higher instances of device failure at these locations. A better understanding of the rinsing flow is essential for reducing yield losses while taking advantage of the benefits of rotation. In the present work, high-speed video and image processing are used to study the dynamics of the advancing wave-front from an impinging jet on a rotating substrate. The flow-rate and rotation-speed are varied for substrates coated with a thin layer of a second liquid that has a different surface tension than the jet liquid. The difference in surface tension of the two fluids gives rise to Marangoni stresses at the interface that have a significant impact on the rinsing process, despite the extremely short time-scales involved.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, Theodoer F.

1995-01-01

Apparatus for measuring thicknesses of semiconductor wafers, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light.

Particulate contamination removal from wafers using plasmas and mechanical agitation

DOEpatents

Selwyn, G.S.

1998-12-15

Particulate contamination removal from wafers is disclosed using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer`s position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates. 4 figs.

Study of temperature distributions in wafer exposure process

NASA Astrophysics Data System (ADS)

Lin, Zone-Ching; Wu, Wen-Jang

During the exposure process of photolithography, wafer absorbs the exposure energy, which results in rising temperature and the phenomenon of thermal expansion. This phenomenon was often neglected due to its limited effect in the previous generation of process. However, in the new generation of process, it may very likely become a factor to be considered. In this paper, the finite element model for analyzing the transient behavior of the distribution of wafer temperature during exposure was established under the assumption that the wafer was clamped by a vacuum chuck without warpage. The model is capable of simulating the distribution of the wafer temperature under different exposure conditions. The flowchart of analysis begins with the simulation of transient behavior in a single exposure region to the variation of exposure energy, interval of exposure locations and interval of exposure time under continuous exposure to investigate the distribution of wafer temperature. The simulation results indicate that widening the interval of exposure locations has a greater impact in improving the distribution of wafer temperature than extending the interval of exposure time between neighboring image fields. Besides, as long as the distance between the field center locations of two neighboring exposure regions exceeds the straight distance equals to three image fields wide, the interacting thermal effect during wafer exposure can be ignored. The analysis flow proposed in this paper can serve as a supporting reference tool for engineers in planning exposure paths.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, T.F.

1995-03-07

Apparatus for measuring thicknesses of semiconductor wafers is discussed, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light. 4 figs.

The Gaia-ESO Survey: Exploring the complex nature and origins of the Galactic bulge populations

NASA Astrophysics Data System (ADS)

Rojas-Arriagada, A.; Recio-Blanco, A.; de Laverny, P.; Mikolaitis, Š.; Matteucci, F.; Spitoni, E.; Schultheis, M.; Hayden, M.; Hill, V.; Zoccali, M.; Minniti, D.; Gonzalez, O. A.; Gilmore, G.; Randich, S.; Feltzing, S.; Alfaro, E. J.; Babusiaux, C.; Bensby, T.; Bragaglia, A.; Flaccomio, E.; Koposov, S. E.; Pancino, E.; Bayo, A.; Carraro, G.; Casey, A. R.; Costado, M. T.; Damiani, F.; Donati, P.; Franciosini, E.; Hourihane, A.; Jofré, P.; Lardo, C.; Lewis, J.; Lind, K.; Magrini, L.; Morbidelli, L.; Sacco, G. G.; Worley, C. C.; Zaggia, S.

2017-05-01

Context. As observational evidence steadily accumulates, the nature of the Galactic bulge has proven to be rather complex: the structural, kinematic, and chemical analyses often lead to contradictory conclusions. The nature of the metal-rich bulge - and especially of the metal-poor bulge - and their relation with other Galactic components, still need to be firmly defined on the basis of statistically significant high-quality data samples. Aims: We used the fourth internal data release of the Gaia-ESO survey to characterize the bulge metallicity distribution function (MDF), magnesium abundance, spatial distribution, and correlation of these properties with kinematics. Moreover, the homogeneous sampling of the different Galactic populations provided by the Gaia-ESO survey allowed us to perform a comparison between the bulge, thin disk, and thick disk sequences in the [Mg/Fe] vs. [Fe/H] plane in order to constrain the extent of their eventual chemical similarities. Methods: We obtained spectroscopic data for 2500 red clump stars in 11 bulge fields, sampling the area -10° ≤ l ≤ + 8° and -10° ≤ b ≤ -4° from the fourth internal data release of the Gaia-ESO survey. A sample of 6300 disk stars was also selected for comparison. Spectrophotometric distances computed via isochrone fitting allowed us to define a sample of stars likely located in the bulge region. Results: From a Gaussian mixture models (GMM) analysis, the bulge MDF is confirmed to be bimodal across the whole sampled area. The relative ratio between the two modes of the MDF changes as a function of b, with metal-poor stars dominating at high latitudes. The metal-rich stars exhibit bar-like kinematics and display a bimodality in their magnitude distribution, a feature which is tightly associated with the X-shape bulge. They overlap with the metal-rich end of the thin disk sequence in the [Mg/Fe] vs. [Fe/H] plane. On the other hand, metal-poor bulge stars have a more isotropic hot kinematics and do

Wafer edge overlay control solution for N7 and beyond

NASA Astrophysics Data System (ADS)

van Haren, Richard; Calado, Victor; van Dijk, Leon; Hermans, Jan; Kumar, Kaushik; Yamashita, Fumiko

2018-03-01

Historically, the on-product overlay performance close to the wafer edge is lagging with respect to the inner part of the wafer. The reason for this is that wafer processing is less controlled close to the wafer edge as opposed to the rest of the wafer. It is generally accepted that Chemical Vapor Deposition (CVD) of stressed layers that cause wafer warp, wafer table contamination, Chemical Mechanical Polishing (CMP), and Reactive Ion Etch (RIE) may deteriorate the overlay performance and/or registration close to the wafer edge. For the N7 technology node and beyond, it is anticipated that the tight on-product overlay specification is required across the full wafer which includes the edge region. In this work, we highlight one contributor that may negatively impact the on-product overlay performance, namely the etch step. The focus will be mainly on the wafer edge region but the remaining part of the wafer is considered as well. Three use-cases are examined: multiple Litho-Etch steps (LEn), contact hole layer etch, and the copper dual damascene etch. We characterize the etch contribution by considering the overlay measurement after resist development inspect (ADI) and after etch inspect (AEI). We show that the Yieldstar diffraction based overlay (μDBO) measurements can be utilized to characterize the etch contribution to the overlay budget. The effects of target asymmetry as well as overlay shifts are considered and compared with SEM measurements. Based on the results above, we propose a control solution aiming to reduce or even eliminate the delta between ADI and AEI. By doing so, target/mark to device offsets due to etch might be avoided.

The peculiar Na-O anticorrelation of the bulge globular cluster NGC 6440

NASA Astrophysics Data System (ADS)

Muñoz, C.; Villanova, S.; Geisler, D.; Saviane, I.; Dias, B.; Cohen, R. E.; Mauro, F.

2017-08-01

Context. Galactic globular clusters (GCs) are essential tools for understanding the earliest epoch of the Milky Way, since they are among the oldest objects in the Universe and can be used to trace its formation and evolution. Current studies using high-resolution spectroscopy for many stars in each of a large sample of GCs allow us to develop a detailed observational picture of their formation and their relation with the Galaxy. However, it is necessary to complete this picture by including GCs that belong to all major Galactic components, including the bulge. Aims: Our aim is to perform a detailed chemical analysis of the bulge GC NGC 6440 in order to determine if this object has multiple populations (MPs) and investigate its relation with the bulge of the Milky Way and with the other Galactic GCs, especially those associated with the bulge, which are largely poorly studied. Methods: We determined the stellar parameters and the chemical abundances of light elements (Na, Al), iron-peak elements (Fe, Sc, Mn, Co, Ni), α-elements (O, Mg, Si, Ca, Ti) and heavy elements (Ba, Eu) in seven red giant members of NGC 6440 using high-resolution spectroscopy from FLAMES-UVES. Results: We found a mean iron content of [Fe/H] =-0.50 ± 0.03 dex in agreement with other studies. We found no internal iron spread. On the other hand, Na and Al show a significant intrinsic spread, but the cluster has no significant O-Na anticorrelation nor does it exhibit a Mg-Al anticorrelation. The α-elements show good agreement with the bulge field star trend, although they are at the high alpha end and are also higher than those of other GCs of comparable metallicity. The heavy elements are dominated by the r-process, indicating a strong contribution by SNeII. The chemical analysis suggests an origin similar to that of the bulge field stars.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2008-10-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefecTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-04-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity Defect(R) data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Automated reticle inspection data analysis for wafer fabs

NASA Astrophysics Data System (ADS)

Summers, Derek; Chen, Gong; Reese, Bryan; Hutchinson, Trent; Liesching, Marcus; Ying, Hai; Dover, Russell

2009-03-01

To minimize potential wafer yield loss due to mask defects, most wafer fabs implement some form of reticle inspection system to monitor photomask quality in high-volume wafer manufacturing environments. Traditionally, experienced operators review reticle defects found by an inspection tool and then manually classify each defect as 'pass, warn, or fail' based on its size and location. However, in the event reticle defects are suspected of causing repeating wafer defects on a completed wafer, potential defects on all associated reticles must be manually searched on a layer-by-layer basis in an effort to identify the reticle responsible for the wafer yield loss. This 'problem reticle' search process is a very tedious and time-consuming task and may cause extended manufacturing line-down situations. Often times, Process Engineers and other team members need to manually investigate several reticle inspection reports to determine if yield loss can be tied to a specific layer. Because of the very nature of this detailed work, calculation errors may occur resulting in an incorrect root cause analysis effort. These delays waste valuable resources that could be spent working on other more productive activities. This paper examines an automated software solution for converting KLA-Tencor reticle inspection defect maps into a format compatible with KLA-Tencor's Klarity DefectTM data analysis database. The objective is to use the graphical charting capabilities of Klarity Defect to reveal a clearer understanding of defect trends for individual reticle layers or entire mask sets. Automated analysis features include reticle defect count trend analysis and potentially stacking reticle defect maps for signature analysis against wafer inspection defect data. Other possible benefits include optimizing reticle inspection sample plans in an effort to support "lean manufacturing" initiatives for wafer fabs.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

NASA Astrophysics Data System (ADS)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Pappas, C. G.; Salatino, M.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Van Lanen, J.; Vavagiakis, E. M.; Ward, J. T.; Wollack, E. J.

2016-08-01

Advanced ACTPol (AdvACT) is a third-generation cosmic microwave background receiver to be deployed in 2016 on the Atacama Cosmology Telescope (ACT). Spanning five frequency bands from 25 to 280 GHz and having just over 5600 transition-edge sensor (TES) bolometers, this receiver will exhibit increased sensitivity and mapping speed compared to previously fielded ACT instruments. This paper presents the fabrication processes developed by NIST to scale to large arrays of feedhorn-coupled multichroic AlMn-based TES polarimeters on 150-mm diameter wafers. In addition to describing the streamlined fabrication process which enables high yields of densely packed detectors across larger wafers, we report the details of process improvements for sensor (AlMn) and insulator (SiN_x) materials and microwave structures, and the resulting performance improvements.

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

NASA Technical Reports Server (NTRS)

Duff, S. M.; Austermann, J.; Beall, J. A.; Becker, D.; Datta, R.; Gallardo, P. A.; Henderson, S. W.; Hilton, G. C.; Ho, S. P.; Hubmayr, J.;

Electrochemical method for defect delineation in silicon-on-insulator wafers

DOEpatents

Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Improved Model for Predicting the Free Energy Contribution of Dinucleotide Bulges to RNA Duplex Stability.

PubMed

Tomcho, Jeremy C; Tillman, Magdalena R; Znosko, Brent M

2015-09-01

Predicting the secondary structure of RNA is an intermediate in predicting RNA three-dimensional structure. Commonly, determining RNA secondary structure from sequence uses free energy minimization and nearest neighbor parameters. Current algorithms utilize a sequence-independent model to predict free energy contributions of dinucleotide bulges. To determine if a sequence-dependent model would be more accurate, short RNA duplexes containing dinucleotide bulges with different sequences and nearest neighbor combinations were optically melted to derive thermodynamic parameters. These data suggested energy contributions of dinucleotide bulges were sequence-dependent, and a sequence-dependent model was derived. This model assigns free energy penalties based on the identity of nucleotides in the bulge (3.06 kcal/mol for two purines, 2.93 kcal/mol for two pyrimidines, 2.71 kcal/mol for 5'-purine-pyrimidine-3', and 2.41 kcal/mol for 5'-pyrimidine-purine-3'). The predictive model also includes a 0.45 kcal/mol penalty for an A-U pair adjacent to the bulge and a -0.28 kcal/mol bonus for a G-U pair adjacent to the bulge. The new sequence-dependent model results in predicted values within, on average, 0.17 kcal/mol of experimental values, a significant improvement over the sequence-independent model. This model and new experimental values can be incorporated into algorithms that predict RNA stability and secondary structure from sequence.

Role of the CCA bulge of prohead RNA of bacteriophage ø29 in DNA packaging.

PubMed

Zhao, Wei; Morais, Marc C; Anderson, Dwight L; Jardine, Paul J; Grimes, Shelley

2008-11-14

The oligomeric ring of prohead RNA (pRNA) is an essential component of the ATP-driven DNA packaging motor of bacteriophage ø29. The A-helix of pRNA binds the DNA translocating ATPase gp16 (gene product 16) and the CCA bulge in this helix is essential for DNA packaging in vitro. Mutation of the bulge by base substitution or deletion showed that the size of the bulge, rather than its sequence, is primary in DNA packaging activity. Proheads reconstituted with CCA bulge mutant pRNAs bound the packaging ATPase gp16 and the packaging substrate DNA-gp3, although DNA translocation was not detected with several mutants. Prohead/bulge-mutant pRNA complexes with low packaging activity had a higher rate of ATP hydrolysis per base pair of DNA packaged than proheads with wild-type pRNA. Cryoelectron microscopy three-dimensional reconstruction of proheads reconstituted with a CCA deletion pRNA showed that the protruding pRNA spokes of the motor occupy a different position relative to the head when compared to particles with wild-type pRNA. Therefore, the CCA bulge seems to dictate the orientation of the pRNA spokes. The conformational changes observed for this mutant pRNA may affect gp16 conformation and/or subsequent ATPase-DNA interaction and, consequently, explain the decreased packaging activity observed for CCA mutants.

Modelling deformation and fracture in confectionery wafers

NASA Astrophysics Data System (ADS)

Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon; Rasburn, John

2015-01-01

The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which was then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.

Development of megasonic cleaning for silicon wafers

NASA Technical Reports Server (NTRS)

Mayer, A.

1980-01-01

A cleaning and drying system for processing at least 2500 three in. diameter wafers per hour was developed with a reduction in process cost. The system consists of an ammonia hydrogen peroxide bath in which both surfaces of 3/32 in. spaced, ion implanted wafers are cleaned in quartz carriers moved on a belt past two pairs of megasonic transducers. The wafers are dried in the novel room temperature, high velocity air dryer in the same carriers used for annealing. A new laser scanner was used effectively to monitor the cleaning ability on a sampling basis.

First detection of the white dwarf cooling sequence of the galactic bulge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calamida, A.; Sahu, K. C.; Anderson, J.

2014-08-01

We present Hubble Space Telescope data of the low-reddening Sagittarius window in the Galactic bulge. The Sagittarius Window Eclipsing Extrasolar Planet Search field (∼3'× 3'), together with three more Advanced Camera for Surveys and eight Wide-Field Camera 3 fields, were observed in the F606W and F814W filters, approximately every two weeks for 2 yr, with the principal aim of detecting a hidden population of isolated black holes and neutron stars through astrometric microlensing. Proper motions were measured with an accuracy of ≈0.1 mas yr{sup –1} (≈4 km s{sup –1}) at F606W ≈ 25.5 mag, and better than ≈0.5 mas yr{supmore » –1} (≈20 km s{sup –1}) at F606W ≈ 28 mag, in both axes. Proper-motion measurements allowed us to separate disk and bulge stars and obtain a clean bulge color-magnitude diagram. We then identified for the first time a white dwarf (WD) cooling sequence in the Galactic bulge, together with a dozen candidate extreme horizontal branch stars. The comparison between theory and observations shows that a substantial fraction of the WDs (≈30%) are systematically redder than the cooling tracks for CO-core H-rich and He-rich envelope WDs. This evidence would suggest the presence of a significant number of low-mass WDs and WD-main-sequence binaries in the bulge. This hypothesis is further supported by the finding of two dwarf novae in outburst, two short-period (P ≲ 1 day) ellipsoidal variables, and a few candidate cataclysmic variables in the same field.« less

Modelling deformation and fracture in confectionery wafers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohammed, Idris K.; Charalambides, Maria N.; Williams, J. Gordon

2015-01-22

The aim of this research is to model the deformation and fracture behaviour of brittle wafers often used in chocolate confectionary products. Three point bending and compression experiments were performed on beam and circular disc samples respectively to determine the 'apparent' stress-strain curves in bending and compression. The deformation of the wafer for both these testing types was observed in-situ within an SEM. The wafer is modeled analytically and numerically as a composite material with a core which is more porous than the skins. X-ray tomography was used to generate a three dimensional volume of the wafer microstructure which wasmore » then meshed and used for quantitative analysis. A linear elastic material model, with a damage function and element deletion, was used and the XMT generated architecture was loaded in compression. The output from the FE simulations correlates closely to the load-deflection deformation observed experimentally.« less

Controllable laser thermal cleavage of sapphire wafers

NASA Astrophysics Data System (ADS)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

NASA Astrophysics Data System (ADS)

Sangwan, Vinod K.; Jariwala, Deep; Everaerts, Ken; McMorrow, Julian J.; He, Jianting; Grayson, Matthew; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.

2014-02-01

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure < 2 × 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Particulate contamination removal from wafers using plasmas and mechanical agitation

DOEpatents

Selwyn, Gary S.

1998-01-01

Particulate contamination removal from wafers using plasmas and mechanical agitation. The present invention includes the use of plasmas with mechanical agitation for removing particulate matter from the surface of a wafer. The apparatus hereof comprises a mechanical activator, at least one conducting contact pin for transferring the vibration from the activator to the wafer, clamp fingers that maintain the wafer's position, and means for generating a plasma in the vicinity of the surface of the wafer, all parts of the cleaning apparatus except the mechanical activator and part of the contact pin being contained inside the processing chamber. By exposing a wafer to a plasma and providing motion thereto in a direction perpendicular to its surface, the bonding between the particulate matter and the surface may be overcome. Once free of the wafer surface, the particulates become charged by electrons from the plasma and are drawn into the plasma by attractive forces which keep them from redepositing. The introduction of a flowing gas through the plasma sweeps the particulates away from the wafer and out of the plasma. The entire surface is cleaned during one cleaning step. The use of an rf plasma to accomplish the particulate removal was found to remove more than 90% of the particulates.

Supermassive black holes and their host galaxies. I. Bulge luminosities from dedicated near-infrared data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Läsker, Ronald; Van de Ven, Glenn; Ferrarese, Laura, E-mail: laesker@mpia.de

2014-01-01

In an effort to secure, refine, and supplement the relation between central supermassive black hole masses, M {sub •}, and the bulge luminosities of their host galaxies, L {sub bul}, we obtained deep, high spatial resolution K-band images of 35 nearby galaxies with securely measured M {sub •}, using the wide-field WIRCam imager at the Canada-France-Hawaii-Telescope. A dedicated data reduction and sky subtraction strategy was adopted to estimate the brightness and structure of the sky, a critical step when tracing the light distribution of extended objects in the near-infrared. From the final image product, bulge and total magnitudes were extractedmore » via two-dimensional profile fitting. As a first order approximation, all galaxies were modeled using a simple Sérsic-bulge+exponential-disk decomposition. However, we found that such models did not adequately describe the structure that we observed in a large fraction of our sample galaxies which often include cores, bars, nuclei, inner disks, spiral arms, rings, and envelopes. In such cases, we adopted profile modifications and/or more complex models with additional components. The derived bulge magnitudes are very sensitive to the details and number of components used in the models, although total magnitudes remain almost unaffected. Usually, but not always, the luminosities and sizes of the bulges are overestimated when a simple bulge+disk decomposition is adopted in lieu of a more complex model. Furthermore, we found that some spheroids are not well fit when the ellipticity of the Sérsic model is held fixed. This paper presents the details of the image processing and analysis, while we discuss how model-induced biases and systematics in bulge magnitudes impact the M {sub •}-L {sub bul} relation in a companion paper.« less

Supermassive Black Holes and Their Host Galaxies. I. Bulge Luminosities from Dedicated Near-infrared Data

NASA Astrophysics Data System (ADS)

Läsker, Ronald; Ferrarese, Laura; van de Ven, Glenn

2014-01-01

In an effort to secure, refine, and supplement the relation between central supermassive black hole masses, M •, and the bulge luminosities of their host galaxies, L bul, we obtained deep, high spatial resolution K-band images of 35 nearby galaxies with securely measured M •, using the wide-field WIRCam imager at the Canada-France-Hawaii-Telescope. A dedicated data reduction and sky subtraction strategy was adopted to estimate the brightness and structure of the sky, a critical step when tracing the light distribution of extended objects in the near-infrared. From the final image product, bulge and total magnitudes were extracted via two-dimensional profile fitting. As a first order approximation, all galaxies were modeled using a simple Sérsic-bulge+exponential-disk decomposition. However, we found that such models did not adequately describe the structure that we observed in a large fraction of our sample galaxies which often include cores, bars, nuclei, inner disks, spiral arms, rings, and envelopes. In such cases, we adopted profile modifications and/or more complex models with additional components. The derived bulge magnitudes are very sensitive to the details and number of components used in the models, although total magnitudes remain almost unaffected. Usually, but not always, the luminosities and sizes of the bulges are overestimated when a simple bulge+disk decomposition is adopted in lieu of a more complex model. Furthermore, we found that some spheroids are not well fit when the ellipticity of the Sérsic model is held fixed. This paper presents the details of the image processing and analysis, while we discuss how model-induced biases and systematics in bulge magnitudes impact the M •-L bul relation in a companion paper.

Bulge-Formed Cooling Channels In A Wall

NASA Technical Reports Server (NTRS)

Mcaninch, Michael D.; Holbrook, Richard L.; Lacount, Dale F.; Kawashige, Chester M.; Crapuchettes, John M.; Scala, James

1996-01-01

Vessels bounded by walls shaped as surfaces of revolution and contain integral cooling channels fabricated by improved method involving combination of welding and bulge forming. Devised to make rocket nozzles; also useful in fabrication of heat exchangers, stationary combustion chambers, and chemical-reactor vessels. Advantages include easier fabrication and greater flexibility of design.

Guided ultrasonic wave beam skew in silicon wafers

NASA Astrophysics Data System (ADS)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

X-ray Selected Symbiotic Candidates in the Galactic Bulge Survey

NASA Astrophysics Data System (ADS)

Hynes, Robert I.; Wetuski, Joshua` D.; Jonker, Peter; Torres, Manuel; Heinke, Craig O.; Maccarone, Tom; Steeghs, Danny; Britt, Christopher; Johnson, Christopher; Nelemans, Gijs

2017-06-01

The Galactic Bulge Survey (GBS) is a broad, shallow survey of Bulge X-ray sources with extensive multiwavelength support. The limiting sensitivity, about 2×1032 erg/s at the Bulge distance, is well suited to finding symbiotic X-ray binaries (SyXBs) containing neutron stars accreting from a cool giant wind, as well as X-ray bright white dwarf systems. Giant counterparts can be securely detected in IR photometry, allowing us to estimate the total number of symbiotics detected by the GBS, and identify a good number of promising candidates. Such an X-ray selected symbiotic sample may be quite different to the traditional symbiotic star population which is usually selected by optical spectroscopy, and consequently biased towards systems with rich line emission. Of the 1640 unique X-ray sources identified by the GBS we find 91 significant matches with candidate Bulge giants. We expect 68 coincidences, so estimate a total sample of about 23 X-ray emitting cool giants detected by the GBS. Most of these are likely to be SyXBs or symbiotics of some type. Narrowing our search to sources coincident to 1", we find 23 matches, with only 8 coincidences expected, so this subsample has a relatively high purity, and likely includes most of the GBS symbiotics. The properties of this subsample are mostly consistent with cool giants, with typical SEDs, long-term lightcurves, and spectra. The sources are inconsistent in color with nearby M dwarfs and show small proper motions, so the foreground contamination is likely small. We present a selection of the best studied objects, focusing on one extremely variable X-ray source coincident with a carbon giant. This is quite an unusual object as carbon stars are rare in the Bulge. The scientific results reported in this article are based on observations made by the Chandra X-ray Observatory and data obtained from the Chandra Data Archive. Support for this work was provided by the National Aeronautics and Space Administration through Chandra

Two Red Clumps and the X-shaped Milky Way Bulge

NASA Astrophysics Data System (ADS)

McWilliam, Andrew; Zoccali, Manuela

2010-12-01

From Two Micron All Sky Survey infrared photometry, we find two red clump (RC) populations coexisting in fields toward the Galactic bulge at latitudes |b|>5fdg5, ranging over ~13° in longitude and 20° in latitude. These RC peaks indicate two stellar populations separated by ~2.3 kpc at (l, b) = (+1, - 8) the two RCs are located at 6.5 and 8.8 ± 0.2 kpc. The double-peaked RC is inconsistent with a tilted bar morphology. Most of our fields show the two RCs at roughly constant distance with longitude, also inconsistent with a tilted bar; however, an underlying bar may be present. Stellar densities in the two RCs change dramatically with longitude: on the positive longitude side the foreground RC is dominant, while the background RC dominates negative longitudes. A line connecting the maxima of the foreground and background populations is tilted to the line of sight by ~20°±4°, similar to claims for the tilt of a Galactic bar. The distance between the two RCs decreases toward the Galactic plane; seen edge-on the bulge is X-shaped, resembling some extragalactic bulges and the results of N-body simulations. The center of this X is consistent with the distance to the Galactic center, although better agreement would occur if the bulge is 2-3 Gyr younger than 47 Tuc. Our observations may be understood if the two RC populations emanate, nearly tangentially, from the Galactic bar ends, in a funnel shape. Alternatively, the X, or double funnel, may continue to the Galactic center. From the Sun, this would appear peanut/box shaped, but X-shaped when viewed tangentially.

Kinematics and abundances of K giants in the nuclear bulge of the Galaxy

NASA Astrophysics Data System (ADS)

Rich, R. Michael

1990-10-01

Radial velocities have been determined for 53 K giants in Baade's window, which belong to the nuclear bulge population and have abundances derived from low resolution spectra. Additional radial velocities for an overlapping sample of 71 bulge K giants show the same dependence of velocity dispersion on abundance; in both samples, the lower velocity dispersion of the metal-rich giants is found to be significant at a level above 90 percent. Extant data support the hypothesis that both M giants and IRAS bulge sources follow steep density laws similar to that which has been predicted for the metal-rick K giants. The abundance distribution of 88 K giants in Baade's window is noted to be notably well fitted by the simple, 'closed box' model of chemical evolution.

The Optical Gravitational Lensing Experiment. BVI Maps of Dense Stellar Regions. III. The Galactic Bulge

NASA Astrophysics Data System (ADS)

Udalski, A.; Szymanski, M.; Kubiak, M.; Pietrzynski, G.; Soszynski, I.; Wozniak, P.; Zebrun, K.; Szewczyk, O.; Wyrzykowski, L.

2002-09-01

We present the VI photometric maps of the Galactic bulge. They contain VI photometry and astrometry of about 30 million stars from 49 fields of 0.225 square degree each in the Galactic center region. The data were collected during the second phase of the OGLE microlensing project. We discuss the accuracy of data and present color-magnitude diagrams of selected fields observed by OGLE in the Galactic bulge. The VI maps of the Galactic bulge are accessible electronically for the astronomical community from the OGLE Internet archive.

High-throughput automatic defect review for 300mm blank wafers with atomic force microscope

NASA Astrophysics Data System (ADS)

Zandiatashbar, Ardavan; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

2015-03-01

While feature size in lithography process continuously becomes smaller, defect sizes on blank wafers become more comparable to device sizes. Defects with nm-scale characteristic size could be misclassified by automated optical inspection (AOI) and require post-processing for proper classification. Atomic force microscope (AFM) is known to provide high lateral and the highest vertical resolution by mechanical probing among all techniques. However, its low throughput and tip life in addition to the laborious efforts for finding the defects have been the major limitations of this technique. In this paper we introduce automatic defect review (ADR) AFM as a post-inspection metrology tool for defect study and classification for 300 mm blank wafers and to overcome the limitations stated above. The ADR AFM provides high throughput, high resolution, and non-destructive means for obtaining 3D information for nm-scale defect review and classification.

Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene

DTIC Science & Technology

2014-08-01

Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene by Eugene Zakar, Wayne Churaman, Collin Becker, Bernard Rod, Luke...Laboratory Adelphi, MD 20783-1138 ARL-TR-7025 August 2014 Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene...Hermetic Encapsulation of Nanoenergetic Porous Silicon Wafer by Parylene 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6

Cohesive zone model for direct silicon wafer bonding

NASA Astrophysics Data System (ADS)

Kubair, D. V.; Spearing, S. M.

2007-05-01

Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

The Extinction Toward the Galactic Bulge from RR Lyrae Stars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunder, A; Popowski, P; Cook, K

2007-11-07

The authors present mean reddenings toward 3525 RR0 Lyrae stars from the Galactic bulge fields of the MACHO Survey. These reddenings are determined using the color at minimum V-band light of the RR0 Lyrae stars themselves and are found to be in general agreement with extinction estimates at the same location obtained from other methods. Using 3256 stars located in the Galactic Bulge, they derive the selective extinction coefficient R{sub V,VR} = A{sub V}/E(V-R) = 4.2 {+-} 0.2. this value is what is expected for a standard extinction law with R{sub V,BV} = 3.1 {+-} 0.3

Reddening and Extinction toward the Galactic Bulge from OGLE-III: The Inner Milky Way's RV ~ 2.5 Extinction Curve

NASA Astrophysics Data System (ADS)

Nataf, David M.; Gould, Andrew; Fouqué, Pascal; Gonzalez, Oscar A.; Johnson, Jennifer A.; Skowron, Jan; Udalski, Andrzej; Szymański, Michał K.; Kubiak, Marcin; Pietrzyński, Grzegorz; Soszyński, Igor; Ulaczyk, Krzysztof; Wyrzykowski, Łukasz; Poleski, Radosław

2013-06-01

We combine VI photometry from OGLE-III with VISTA Variables in The Via Lactea survey and Two Micron All Sky Survey measurements of E(J - Ks ) to resolve the longstanding problem of the non-standard optical extinction toward the Galactic bulge. We show that the extinction is well fit by the relation AI = 0.7465 × E(V - I) + 1.3700 × E(J - Ks ), or, equivalently, AI = 1.217 × E(V - I)(1 + 1.126 × (E(J - Ks )/E(V - I) - 0.3433)). The optical and near-IR reddening law toward the inner Galaxy approximately follows an RV ≈ 2.5 extinction curve with a dispersion {\\sigma }_{R_{V}} \\approx 0.2, consistent with extragalactic investigations of the hosts of Type Ia SNe. Differential reddening is shown to be significant on scales as small as our mean field size of 6'. The intrinsic luminosity parameters of the Galactic bulge red clump (RC) are derived to be (M_{I,RC}, \\sigma _{I,RC,0}, (V-I)_{RC,0}, \\sigma _{(V-I)_{RC}}, (J-K_{s})_{RC,0}) = (-0.12, 0.09, 1.06, 0.121, 0.66). Our measurements of the RC brightness, brightness dispersion, and number counts allow us to estimate several Galactic bulge structural parameters. We estimate a distance to the Galactic center of 8.20 kpc. We measure an upper bound on the tilt α ≈ 40° between the bulge's major axis and the Sun-Galactic center line of sight, though our brightness peaks are consistent with predictions of an N-body model oriented at α ≈ 25°. The number of RC stars suggests a total stellar mass for the Galactic bulge of ~2.3 × 1010 M ⊙ if one assumes a canonical Salpeter initial mass function (IMF), or ~1.6 × 1010 M ⊙ if one assumes a bottom-light Zoccali IMF. Based on observations obtained with the 1.3 m Warsaw telescope at the Las Campanas Observatory of the Carnegie Institution for Science.

JASMINE-Astrometric Map of the Galactic Bulge-

NASA Astrophysics Data System (ADS)

Gouda, N.; Kobayashi, Y.; Yamada, Y.; Yano, T.; Tsujimoto, T.; Suganuma, M.; Niwa, Y.; Yamauchi, M.; Kawakatsu, Y.; Matsuhara, H.; Moda, A.; Tsuiki, A.; Utashima, M.; Ogawa, A.; Sako, N.

2006-08-01

We introduce a Japanese plan of infrared(z-band:0.9μm) space astrometry (JASMINE-project). JASMINE is the satellite (Japan Astrometry Satellite Mission for INfrared Exploration) which will measure the distances and apparent motions of stars around the center of the Milky Way with yet unprecedented precision. It will measure parallaxes, positions with the accuracy of 10 micro-arcsec and proper motions with the accuracy of 4 micro-arcsec/year for stars brighter than z=14mag. JASMINE can observe about ten million stars belonging to the bulge components of our Galaxy, which are hidden by the interstellar dust extinction in optical bands. Number of stars with sigma/pi <0.1 in the direction of the Galactic central bulge is about 1000 times larger than those observed in optical bands, where pi is a parallax and sigma is an error of the parallax. With the completely new "map of the bulge in the Milky Way", it is expected that many new exciting scientific results will be obtained in various fields of astronomy. We will introduce some scientific topics which will be obtained by JASMINE. Presently, JASMINE is in a development phase, with a target launch date around 2015. We adopt the following instrument design of JASMINE in order to get the accurate positions of many stars. We adopt a 3-mirrors optical system (modified Korsch system) with a primary mirror of 0.75m. On the astro-focal plane, we put dozens of new type of CCDs for z-band to get a wide field of view. The consideration of overall system(bus) design is now going on in cooperation with Japan Aerospace Exploration Agency (JAXA). The introduction of JASMINE and the present status of the project will be shown in the presentation.

Wafer hot spot identification through advanced photomask characterization techniques: part 2

NASA Astrophysics Data System (ADS)

Choi, Yohan; Green, Michael; Cho, Young; Ham, Young; Lin, Howard; Lan, Andy; Yang, Richer; Lung, Mike

2017-03-01

Historically, 1D metrics such as Mean to Target (MTT) and CD Uniformity (CDU) have been adequate for mask end users to evaluate and predict the mask impact on the wafer process. However, the wafer lithographer's process margin is shrinking at advanced nodes to a point that classical mask CD metrics are no longer adequate to gauge the mask contribution to wafer process error. For example, wafer CDU error at advanced nodes is impacted by mask factors such as 3-dimensional (3D) effects and mask pattern fidelity on sub-resolution assist features (SRAFs) used in Optical Proximity Correction (OPC) models of ever-increasing complexity. To overcome the limitation of 1D metrics, there are numerous on-going industry efforts to better define wafer-predictive metrics through both standard mask metrology and aerial CD methods. Even with these improvements, the industry continues to struggle to define useful correlative metrics that link the mask to final device performance. In part 1 of this work, we utilized advanced mask pattern characterization techniques to extract potential hot spots on the mask and link them, theoretically, to issues with final wafer performance. In this paper, part 2, we complete the work by verifying these techniques at wafer level. The test vehicle (TV) that was used for hot spot detection on the mask in part 1 will be used to expose wafers. The results will be used to verify the mask-level predictions. Finally, wafer performance with predicted and verified mask/wafer condition will be shown as the result of advanced mask characterization. The goal is to maximize mask end user yield through mask-wafer technology harmonization. This harmonization will provide the necessary feedback to determine optimum design, mask specifications, and mask-making conditions for optimal wafer process margin.

Wafering economies for industrialization from a wafer manufacturer's viewpoint

NASA Technical Reports Server (NTRS)

Rosenfield, T. P.; Fuerst, F. P.

1982-01-01

The key technical limitations which inhibit the lowering of value-added costs for state-of-the-art wafering techniques are assessed. From the best experimental results to date, a projection was made to identify those parts of each system which need to be developed in order to meet or improve upon the value-added cost reduction necessary for $0.70/Wp photovoltaics modules.

Wafer-level micro-optics: trends in manufacturing, testing, packaging, and applications

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Gong, Li; Rieck, Juergen; Zheng, Alan

2012-11-01

Micro-optics is an indispensable key enabling technology (KET) for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the last decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks (supercomputer, ROADM), bringing high-speed internet to our homes (FTTH). Even our modern smart phones contain a variety of micro-optical elements. For example, LED flashlight shaping elements, the secondary camera, and ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by semiconductor industry. Thousands of components are fabricated in parallel on a wafer. We report on the state of the art in wafer-based manufacturing, testing, packaging and present examples and applications for micro-optical components and systems.

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

PubMed

Li, Xin; Jordan, Matthew B; Ayari, Taha; Sundaram, Suresh; El Gmili, Youssef; Alam, Saiful; Alam, Muhbub; Patriarche, Gilles; Voss, Paul L; Paul Salvestrini, Jean; Ougazzaden, Abdallah

2017-04-11

Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.

Spiral Galaxy Central Bulge Tangential Speed of Revolution Curves

NASA Astrophysics Data System (ADS)

Taff, Laurence

2013-03-01

The objective was to, for the first time in a century, scientifically analyze the ``rotation curves'' (sic) of the central bulges of scores of spiral galaxies. I commenced with a methodological, rational, geometrical, arithmetic, and statistical examination--none of them carried through before--of the radial velocity data. The requirement for such a thorough treatment is the paucity of data typically available for the central bulge: fewer than 10 observations and frequently only five. The most must be made of these. A consequence of this logical handling is the discovery of a unique model for the central bulge volume mass density resting on the positive slope, linear, rise of its tangential speed of revolution curve and hence--for the first time--a reliable mass estimate. The deduction comes from a known physics-based, mathematically valid, derivation (not assertion). It rests on the full (not partial) equations of motion plus Poisson's equation. Following that is a prediction for the gravitational potential energy and thence the gravitational force. From this comes a forecast for the tangential speed of revolution curve. It was analyzed in a fashion identical to that of the data thereby closing the circle and demonstrating internal self-consistency. This is a hallmark of a scientific method-informed approach to an experimental problem. Multiple plots of the relevant quantities and measures of goodness of fit will be shown. Astronomy related

THE VERTICAL X-SHAPED STRUCTURE IN THE MILKY WAY: EVIDENCE FROM A SIMPLE BOXY BULGE MODEL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Zhaoyu; Shen Juntai, E-mail: jshen@shao.ac.cn

2012-09-20

A vertical X-shaped structure in the Galactic bulge was recently reported. Here, we present evidence of a similar X-shaped structure in the Shen et al. 2010 bar/boxy bulge model that simultaneously matches the stellar kinematics successfully. The X-shaped structure is found in the central region of our bar/boxy bulge model and is qualitatively consistent with the observed one in many aspects. End-to-end separations of the X-shaped structure in the radial and vertical directions are roughly 3 kpc and 1.8 kpc, respectively. The X-shaped structure contains about 7% of light in the boxy bulge region, but it is significant enough tomore » be identified in observations. An X-shaped structure naturally arises in the formation of bar/boxy bulges and is mainly associated with orbits trapped around the vertically extended x{sub 1} family. Like the bar in our model, the X-shaped structure tilts away from the Sun-Galactic center line by 20 Degree-Sign . The X-shaped structure becomes increasingly symmetric about the disk plane, so the observed symmetry may indicate that it formed at least a few billion years ago. The existence of the vertical X-shaped structure suggests that the formation of the Milky Way bulge is shaped mainly by internal disk dynamical instabilities.« less

Compensating measured intra-wafer ring oscillator stage delay with intra-wafer exposure dose corrections

NASA Astrophysics Data System (ADS)

Verhaegen, Staf; Nackaerts, Axel; Dusa, Mircea; Carpaij, Rene; Vandenberghe, Geert; Finders, Jo

2006-03-01

The purpose of this paper is to use measurements on real working devices to derive more information than typically measured by the classic line-width measurement techniques. The first part of the paper will discuss the principle of the measurements with a ring oscillator, a circuit used to measure the speed of elementary logic gates. These measurements contribute to the understanding of the exact timing dependencies in circuits, which is of utmost importance for the design and simulation of these circuits. When connecting an odd number of digital inverting stages in a ring, the circuit has no stable digital state but acts as an analog oscillator with the oscillation frequency dependent on the analog propagation delay of the signals through the stages. By varying some conditions during a litho step, the delay change caused by the process condition change can be measured very accurately. The response of the ring oscillator delay to exposure dose is measured and presented in this paper together with a comparison of measured line-width values of the poly gate lines. The second part of the paper will focus on improving the intra-wafer variation of the stage delay. A number of ring oscillators are put in a design at different slit and scan locations. 200mm wafers are processed with 48 full dies present. From the intra-wafer delay fingerprint and the dose sensitivity of the delay an intra-wafer dose correction, also called a dose recipe, is calculated. This dose recipe is used on the scanner to compensate for effects that are the root cause for the delay profile; including reticle and processing such as track, etch and annealing.

New overlay measurement technique with an i-line stepper using embedded standard field image alignment marks for wafer bonding applications

NASA Astrophysics Data System (ADS)

Kulse, P.; Sasai, K.; Schulz, K.; Wietstruck, M.

2017-06-01

In the last decades the semiconductor technology has been driven by Moore's law leading to high performance CMOS technologies with feature sizes of less than 10 nm [1]. It has been pointed out that not only scaling but also the integration of novel components and technology modules into CMOS/BiCMOS technologies is becoming more attractive to realize smart and miniaturized systems [2]. Driven by new applications in the area of communication, health and automation, new components and technology modules such as BiCMOS embedded RF-MEMS, high-Q passives, Sibased microfluidics and InP-SiGe BiCMOS heterointegration have been demonstrated [3-6]. In contrast to standard VLSI processes fabricated on front side of the silicon wafer, these new technology modules require addition backside processing of the wafer; thus an accurate alignment between the front and backside of the wafer is mandatory. In previous work an advanced back to front side alignment technique and implementation into IHP's 0.25/0.13 μm high performance SiGe:C BiCMOS backside process module has been presented [7]. The developed technique enables a high resolution and accurate lithography on the backside of BiCMOS wafer for additional backside processing. In addition to the aforementioned back side process technologies, new applications like Through-Silicon Vias (TSV) for interposers and advanced substrate technologies for 3D heterogeneous integration demand not only single wafer fabrication but also processing of wafer stacks provided by temporary and permanent wafer bonding [8]. Therefore, the available overlay measurement techniques are not suitable if overlay and alignment marks are realized at the bonding interface of a wafer stack which consists of both a silicon device and a silicon carrier wafer. The former used EVG 40NT automated overlay measurement system, which use two opposite positioned microscopes inspecting simultaneous the wafer back and front side, is not capable measuring embedded overlay

Extremely metal-poor stars from the cosmic dawn in the bulge of the Milky Way.

PubMed

Howes, L M; Casey, A R; Asplund, M; Keller, S C; Yong, D; Nataf, D M; Poleski, R; Lind, K; Kobayashi, C; Owen, C I; Ness, M; Bessell, M S; Da Costa, G S; Schmidt, B P; Tisserand, P; Udalski, A; Szymański, M K; Soszyński, I; Pietrzyński, G; Ulaczyk, K; Wyrzykowski, Ł; Pietrukowicz, P; Skowron, J; Kozłowski, S; Mróz, P

2015-11-26

The first stars are predicted to have formed within 200 million years after the Big Bang, initiating the cosmic dawn. A true first star has not yet been discovered, although stars with tiny amounts of elements heavier than helium ('metals') have been found in the outer regions ('halo') of the Milky Way. The first stars and their immediate successors should, however, preferentially be found today in the central regions ('bulges') of galaxies, because they formed in the largest over-densities that grew gravitationally with time. The Milky Way bulge underwent a rapid chemical enrichment during the first 1-2 billion years, leading to a dearth of early, metal-poor stars. Here we report observations of extremely metal-poor stars in the Milky Way bulge, including one star with an iron abundance about 10,000 times lower than the solar value without noticeable carbon enhancement. We confirm that most of the metal-poor bulge stars are on tight orbits around the Galactic Centre, rather than being halo stars passing through the bulge, as expected for stars formed at redshifts greater than 15. Their chemical compositions are in general similar to typical halo stars of the same metallicity although intriguing differences exist, including lower abundances of carbon.

Reticle variation influence on manufacturing line and wafer device performance

NASA Astrophysics Data System (ADS)

Nistler, John L.; Spurlock, Kyle

1994-01-01

Cost effective manufacturing of devices at 0.5, 0.35 and 0.25μm geometries will be highly dependent on a companys' ability to obtain an economic return on investment. The high capital investment in equipment and facilities, not to mention the related chemical and wafer costs, for producing 200mm silicon wafers requires aspects of wafer processing to be tightly controlled. Reduction in errors and enhanced yield management requires early correction or avoidance of reticle problems. It is becoming increasingly important to recognize and track all pertinent factors impacting both the technical and financial viability of a wafer manufacturing fabrication area. Reticle related effects on wafer manufacturing can be costly and affect the total quality perceived by the device customer.

Silicon wafer-based tandem cells: The ultimate photovoltaic solution?

NASA Astrophysics Data System (ADS)

Green, Martin A.

2014-03-01

Recent large price reductions with wafer-based cells have increased the difficulty of dislodging silicon solar cell technology from its dominant market position. With market leaders expected to be manufacturing modules above 16% efficiency at 0.36/Watt by 2017, even the cost per unit area (60-70/m2) will be difficult for any thin-film photovoltaic technology to significantly undercut. This may make dislodgement likely only by appreciably higher energy conversion efficiency approaches. A silicon wafer-based cell able to capitalize on on-going cost reductions within the mainstream industry, but with an appreciably higher than present efficiency, might therefore provide the ultimate PV solution. With average selling prices of 156 mm quasi-square monocrystalline Si photovoltaic wafers recently approaching 1 (per wafer), wafers now provide clean, low cost templates for overgrowth of thin, wider bandgap high performance cells, nearly doubling silicon's ultimate efficiency potential. The range of possible Si-based tandem approaches is reviewed together with recent results and ultimate prospects.

Characterization of wafer-level bonded hermetic packages using optical leak detection

NASA Astrophysics Data System (ADS)

Duan, Ani; Wang, Kaiying; Aasmundtveit, Knut; Hoivik, Nils

2009-07-01

For MEMS devices required to be operated in a hermetic environment, one of the main reliability issues is related to the packaging methods applied. In this paper, an optical method for testing low volume hermetic cavities formed by anodic bonding between glass and SOI (silicon on insulator) wafer is presented. Several different cavity-geometry structures have been designed, fabricated and applied to monitor the hermeticity of wafer level anodic bonding. SOI wafer was used as the cap wafer on which the different-geometry structures were fabricated using standard MEMS technology. The test cavities were bonded using SOI wafers to glass wafers at 400C and 1000mbar pressure inside a vacuum bonding chamber. The bonding voltage varies from 200V to 600V. The bonding strength between glass and SOI wafer was mechanically tested using shear tester. The deformation amplitudes of the cavity cap surface were monitored by using an optical interferometer. The hermeticity of the glass-to-SOI wafer level bonding was characterized through observing the surface deformation in a 6 months period in atmospheric environment. We have observed a relatively stable micro vacuum-cavity.

New VVV Survey Globular Cluster Candidates in the Milky Way Bulge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minniti, Dante; Gómez, Matías; Geisler, Douglas

It is likely that a number of Galactic globular clusters remain to be discovered, especially toward the Galactic bulge. High stellar density combined with high and differential interstellar reddening are the two major problems for finding globular clusters located toward the bulge. We use the deep near-IR photometry of the VISTA Variables in the Vía Láctea (VVV) Survey to search for globular clusters projected toward the Galactic bulge, and hereby report the discovery of 22 new candidate globular clusters. These objects, detected as high density regions in our maps of bulge red giants, are confirmed as globular cluster candidates bymore » their color–magnitude diagrams. We provide their coordinates as well as their near-IR color–magnitude diagrams, from which some basic parameters are derived, such as reddenings and heliocentric distances. The color–magnitude diagrams reveal well defined red giant branches in all cases, often including a prominent red clump. The new globular cluster candidates exhibit a variety of extinctions (0.06 < A {sub Ks} < 2.77) and distances (5.3 < D < 9.5 kpc). We also classify the globular cluster candidates into 10 metal-poor and 12 metal-rich clusters, based on the comparison of their color–magnitude diagrams with those of known globular clusters also observed by the VVV Survey. Finally, we argue that the census for Galactic globular clusters still remains incomplete, and that many more candidate globular clusters (particularly the low luminosity ones) await to be found and studied in detail in the central regions of the Milky Way.« less

Mechanics of membrane bulging during cell-wall disruption in Gram-negative bacteria

NASA Astrophysics Data System (ADS)

Daly, Kristopher E.; Huang, Kerwyn Casey; Wingreen, Ned S.; Mukhopadhyay, Ranjan

2011-04-01

The bacterial cell wall is a network of sugar strands crosslinked by peptides that serve as the primary structure for bearing osmotic stress. Despite its importance in cellular survival, the robustness of the cell wall to network defects has been relatively unexplored. Treatment of the Gram-negative bacterium Escherichia coli with the antibiotic vancomycin, which disrupts the crosslinking of new material during growth, leads to the development of pronounced bulges and eventually of cell lysis. Here, we model the mechanics of the bulging of the cytoplasmic membrane through pores in the cell wall. We find that the membrane undergoes a transition between a nearly flat state and a spherical bulge at a critical pore radius of ~20 nm. This critical pore size is large compared to the typical distance between neighboring peptides and glycan strands, and hence pore size acts as a constraint on network integrity. We also discuss the general implications of our model to membrane deformations in eukaryotic blebbing and vesiculation in red blood cells.

Formation of the Lunar Fossil Bulges and its Implication for the Early Earth and Moon

NASA Astrophysics Data System (ADS)

Qin, C.; Zhong, S.; Phillips, R. J.

2017-12-01

First recognized by Laplace more than two centuries ago, the lunar gravitational and shape anomalies associated with rotational and tidal bulges are significantly larger than predicted from the hydrostatic theory. The harmonic degree-2 gravitational coefficients of the Moon, C20 and C22 (measuring the size of the rotational and tidal bulges), are 17 and 14 times of their hydrostatic counterparts, respectively, after removal of the effect from large impact basins. The bulges are commonly considered as remnant hydrostatic features, "frozen-in" when the Moon was closer to the Earth, experiencing larger tidal-rotational forces. The extant hypothesis is that as the Moon cooled and migrated outwards, a strong outer layer (lithosphere) thickened and reached a stress state that supported the bulges, which no longer tracked the hydrostatic ellipticity. However, this process is poorly understood and an appropriate dynamical model has not been engaged. Here we present the first dynamically self-consistent model of lunar bulge formation that couples a lunar interior thermal evolution model to the tidal-rotational forcing of the Moon. The forcing magnitude decreases with time as the Moon despins on the receding orbit, while the recession rate is controlled by the Earth's tidal dissipation factor Q. Assuming a viscoelastic rheology, the cooling of the Moon is described by a model with high viscosity lithosphere thickening with time. While conventional methods are not suitable for models with time-dependent viscoelastic structure, a semi-analytical method has been developed to address this problem. We show that the bulge formation is controlled by the relative timing of lithosphere thickening and lunar orbit recession. Based on our calculations, we conclude that the development of the fossil bulges may have taken as long as 400 million years after the formation of lunar lithosphere and was complete when the lunar orbit semi-major axis, a, was 32 Earth's radius, RE. We find a

Electrical Characterization of 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Chen, Liangyu; Spry, David J.; Beheim, Glenn M.; Chang, Carl W.

2014-01-01

This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA's on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 degC. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 degC to 500 degC.

From magic to technology: materials integration by wafer bonding

NASA Astrophysics Data System (ADS)

Dragoi, Viorel

2006-02-01

Wafer bonding became in the last decade a very powerful technology for MEMS/MOEMS manufacturing. Being able to offer a solution to overcome some problems of the standard processes used for materials integration (e.g. epitaxy, thin films deposition), wafer bonding is nowadays considered an important item in the MEMS engineer toolbox. Different principles governing the wafer bonding processes will be reviewed in this paper. Various types of applications will be presented as examples.

Single-shot optical recorder with sub-picosecond resolution and scalable record length on a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muir, R.; Heebner, J.

In this study, we demonstrate a novel, single-shot recording technology for transient optical signals. A resolution of 0.4 ps over a record length of 54 ps was demonstrated. Here, a pump pulse crossing through a signal samples a diagonal “slice” of space–time, enabling a camera to record spatially the time content of the signal. Unlike related X (2)-based cross-correlation techniques, here the signal is sampled through optically pumped carriers that modify the refractive index of a silicon wafer. Surrounding the wafer with birefringent retarders enables two time-staggered, orthogonally polarized signal copies to probe the wafer. Recombining the copies at amore » final crossed polarizer destructively interferes with them, except during the brief stagger window, where a differential phase shift is incurred. This enables the integrating response of the rapidly excited but persistent carriers to be optically differentiated. Lastly, this sampling mechanism has several advantages that enable scaling to long record lengths, including making use of large, inexpensive semiconductor wafers, eliminating the need for phase matching, broad insensitivity to the spectral and angular properties of the pump, and overall hardware simplicity.« less

Single-shot optical recorder with sub-picosecond resolution and scalable record length on a semiconductor wafer

DOE PAGES

Muir, R.; Heebner, J.

2017-10-24

In this study, we demonstrate a novel, single-shot recording technology for transient optical signals. A resolution of 0.4 ps over a record length of 54 ps was demonstrated. Here, a pump pulse crossing through a signal samples a diagonal “slice” of space–time, enabling a camera to record spatially the time content of the signal. Unlike related X (2)-based cross-correlation techniques, here the signal is sampled through optically pumped carriers that modify the refractive index of a silicon wafer. Surrounding the wafer with birefringent retarders enables two time-staggered, orthogonally polarized signal copies to probe the wafer. Recombining the copies at amore » final crossed polarizer destructively interferes with them, except during the brief stagger window, where a differential phase shift is incurred. This enables the integrating response of the rapidly excited but persistent carriers to be optically differentiated. Lastly, this sampling mechanism has several advantages that enable scaling to long record lengths, including making use of large, inexpensive semiconductor wafers, eliminating the need for phase matching, broad insensitivity to the spectral and angular properties of the pump, and overall hardware simplicity.« less

Mask-to-wafer alignment system

DOEpatents

Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

2003-11-04

A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

WaferOptics® mass volume production and reliability

NASA Astrophysics Data System (ADS)

Wolterink, E.; Demeyer, K.

2010-05-01

The Anteryon WaferOptics® Technology platform contains imaging optics designs, materials, metrologies and combined with wafer level based Semicon & MEMS production methods. WaferOptics® first required complete new system engineering. This system closes the loop between application requirement specifications, Anteryon product specification, Monte Carlo Analysis, process windows, process controls and supply reject criteria. Regarding the Anteryon product Integrated Lens Stack (ILS), new design rules, test methods and control systems were assessed, implemented, validated and customer released for mass production. This includes novel reflowable materials, mastering process, replication, bonding, dicing, assembly, metrology, reliability programs and quality assurance systems. Many of Design of Experiments were performed to assess correlations between optical performance parameters and machine settings of all process steps. Lens metrologies such as FFL, BFL, and MTF were adapted for wafer level production and wafer mapping was introduced for yield management. Test methods for screening and validating suitable optical materials were designed. Critical failure modes such as delamination and popcorning were assessed and modeled with FEM. Anteryon successfully managed to integrate the different technologies starting from single prototypes to high yield mass volume production These parallel efforts resulted in a steep yield increase from 30% to over 90% in a 8 months period.

Effect of Explosion Bulge Test Parameters on the Measurement of Deformation Resistance for Steel

DTIC Science & Technology

2014-02-01

UNCLASSIFIED UNCLASSIFIED Effect of Explosion Bulge Test Parameters on the Measurement of Deformation Resistance for Steel C...Measurement of Deformation Resistance for Steel Executive Summary The Explosion Bulge Test has been used for over 60 years as a standard test for...the assessment of steel toughness and deformation resistance under blast loading conditions [1-3]. However, details of the test conditions vary

Was the Milky Way Bulge Formed from the Buckling Disk Instability, Hierarchical Collapse, Accretion of Clumps, or All of the Above?

NASA Astrophysics Data System (ADS)

Nataf, David M.

2017-09-01

The assembly of the Milky Way bulge is an old topic in astronomy, one now in a period of renewed and rapid development. That is due to tremendous advances in observations of bulge stars, motivating observations of both local and high-redshift galaxies, and increasingly sophisticated simulations. The dominant scenario for bulge formation is that of the Milky Way as a nearly pure disk galaxy, with the inner disk having formed a bar and buckled. This can potentially explain virtually all bulge stars with [Fe/H] ≳ -1.0, which comprise 95% of the stellar population. The evidence is the incredible success in N-body models of this type in making non-trivial, non-generic predictions, such as the rotation curve and velocity dispersion measured from radial velocities, and the spatial morphologies of the peanut/X-shape and the long bar. The classical bulge scenario, whereby the bulge formed from early dissipative collapse and mergers, remains viable for stars with [Fe/H] ≲ -1.0 and potentially a minority of the other stars. A classical bulge is expected from Λ-CDM cosmological simulations, can accentuate the properties of an existing bar in a hybrid system, and is most consistent with the bulge abundance trends such as [Mg/Fe], which are elevated relative to both the thin and thick disks. Finally, the clumpy-galaxy scenario is considered, as it is the correct description of most Milky Way precursors given observations of high-redshift galaxies. Simulations predict that these star-forming clumps will sometimes migrate to the centres of galaxies where they may form a bulge, and galaxies often include a bulge clump as well. They will possibly form a bar with properties consistent with those of the Milky Way, such as the exponential profile and metallicity gradient. Given the relative successes of these scenarios, the Milky Way bulge is plausibly of composite origin, with a classical bulge and/or inner halo numerically dominant for stars with [Fe/H] ≲ -1.0, a buckling

VizieR Online Data Catalog: SDSS bulge, disk and total stellar mass estimates (Mendel+, 2014)

NASA Astrophysics Data System (ADS)

Mendel, J. T.; Simard, L.; Palmer, M.; Ellison, S. L.; Patton, D. R.

2014-01-01

We present a catalog of bulge, disk, and total stellar mass estimates for ~660000 galaxies in the Legacy area of the Sloan Digital Sky Survey Data (SDSS) Release 7. These masses are based on a homogeneous catalog of g- and r-band photometry described by Simard et al. (2011, Cat. J/ApJS/196/11), which we extend here with bulge+disk and Sersic profile photometric decompositions in the SDSS u, i, and z bands. We discuss the methodology used to derive stellar masses from these data via fitting to broadband spectral energy distributions (SEDs), and show that the typical statistical uncertainty on total, bulge, and disk stellar mass is ~0.15 dex. Despite relatively small formal uncertainties, we argue that SED modeling assumptions, including the choice of synthesis model, extinction law, initial mass function, and details of stellar evolution likely contribute an additional 60% systematic uncertainty in any mass estimate based on broadband SED fitting. We discuss several approaches for identifying genuine bulge+disk systems based on both their statistical likelihood and an analysis of their one-dimensional surface-brightness profiles, and include these metrics in the catalogs. Estimates of the total, bulge and disk stellar masses for both normal and dust-free models and their uncertainties are made publicly available here. (4 data files).

Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

NASA Astrophysics Data System (ADS)

Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

2018-01-01

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

A parametric description of the 3D structure of the Galactic bar/bulge using the VVV survey

NASA Astrophysics Data System (ADS)

Simion, I. T.; Belokurov, V.; Irwin, M.; Koposov, S. E.; Gonzalez-Fernandez, C.; Robin, A. C.; Shen, J.; Li, Z.-Y.

2017-11-01

We study the structure of the inner Milky Way using the latest data release of the VISTA Variables in the Via Lactea (VVV) survey. The VVV is a deep near-infrared, multi-colour photometric survey with a coverage of 300 square degrees towards the bulge/bar. We use red clump (RC) stars to produce a high-resolution dust map of the VVV's field of view. From de-reddened colour-magnitude diagrams, we select red giant branch stars to investigate their 3D density distribution within the central 4 kpc. We demonstrate that our best-fitting parametric model of the bulge density provides a good description of the VVV data, with a median percentage residual of 5 per cent over the fitted region. The strongest of the otherwise low-level residuals are overdensities associated with a low-latitude structure as well as the so-called X-shape previously identified using the split RC. These additional components contribute only ˜5 per cent and ˜7 per cent respectively to the bulge mass budget. The best-fitting bulge is `boxy' with an axial ratio of [1:0.44:0.31] and is rotated with respect to the Sun-Galactic Centre line by at least 20°. We provide an estimate of the total, full sky, mass of the bulge of M_bulge^{Chabrier} = 2.36 × 10^{10} M_{⊙} for a Chabrier initial mass function. We show that there exists a strong degeneracy between the viewing angle and the dispersion of the RC absolute magnitude distribution. The value of the latter is strongly dependent on the assumptions made about the intrinsic luminosity function of the bulge.

New VVV Survey Globular Cluster Candidates in the Milky Way Bulge

NASA Astrophysics Data System (ADS)

Minniti, Dante; Geisler, Douglas; Alonso-García, Javier; Palma, Tali; Beamín, Juan Carlos; Borissova, Jura; Catelan, Marcio; Clariá, Juan J.; Cohen, Roger E.; Contreras Ramos, Rodrigo; Dias, Bruno; Fernández-Trincado, Jose G.; Gómez, Matías; Hempel, Maren; Ivanov, Valentin D.; Kurtev, Radostin; Lucas, Phillip W.; Moni-Bidin, Christian; Pullen, Joyce; Ramírez Alegría, Sebastian; Saito, Roberto K.; Valenti, Elena

2017-11-01

It is likely that a number of Galactic globular clusters remain to be discovered, especially toward the Galactic bulge. High stellar density combined with high and differential interstellar reddening are the two major problems for finding globular clusters located toward the bulge. We use the deep near-IR photometry of the VISTA Variables in the Vía Láctea (VVV) Survey to search for globular clusters projected toward the Galactic bulge, and hereby report the discovery of 22 new candidate globular clusters. These objects, detected as high density regions in our maps of bulge red giants, are confirmed as globular cluster candidates by their color-magnitude diagrams. We provide their coordinates as well as their near-IR color-magnitude diagrams, from which some basic parameters are derived, such as reddenings and heliocentric distances. The color-magnitude diagrams reveal well defined red giant branches in all cases, often including a prominent red clump. The new globular cluster candidates exhibit a variety of extinctions (0.06 < A Ks < 2.77) and distances (5.3 < D < 9.5 kpc). We also classify the globular cluster candidates into 10 metal-poor and 12 metal-rich clusters, based on the comparison of their color-magnitude diagrams with those of known globular clusters also observed by the VVV Survey. Finally, we argue that the census for Galactic globular clusters still remains incomplete, and that many more candidate globular clusters (particularly the low luminosity ones) await to be found and studied in detail in the central regions of the Milky Way. Based on observations taken within the ESO programs 179.B-2002 and 298.D-5048.

Multifunctional medicated lyophilised wafer dressing for effective chronic wound healing.

PubMed

Pawar, Harshavardhan V; Boateng, Joshua S; Ayensu, Isaac; Tetteh, John

2014-06-01

Wafers combining weight ratios of Polyox with carrageenan (75/25) or sodium alginate (50/50) containing streptomycin and diclofenac were prepared to improve chronic wound healing. Gels were freeze-dried using a lyophilisation cycle incorporating an annealing step. Wafers were characterised for morphology, mechanical and in vitro functional (swelling, adhesion, drug release in the presence of simulated wound fluid) characteristics. Both blank (BLK) and drug-loaded (DL) wafers were soft, flexible, elegant in appearance and non-brittle in nature. Annealing helped to improve porous nature of wafers but was affected by the addition of drugs. Mechanical characterisation demonstrated that the wafers were strong enough to withstand normal stresses but also flexible to prevent damage to newly formed skin tissue. Differences in swelling, adhesion and drug release characteristics could be attributed to differences in pore size and sodium sulphate formed because of the salt forms of the two drugs. BLK wafers showed relatively higher swelling and adhesion than DL wafers with the latter showing controlled release of streptomycin and diclofenac. The optimised dressing has the potential to reduce bacterial infection and can also help to reduce swelling and pain associated with injury due to the anti-inflammatory action of diclofenac and help to achieve more rapid wound healing. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

The density of dark matter in the Galactic bulge and implications for indirect detection

DOE PAGES

Hooper, Dan

2016-11-29

A recent study, making use of the number of horizontal branch stars observed in infrared photometric surveys and kinematic measurements of M-giant stars from the BRAVA survey, combined with N-body simulations of stellar populations, has presented a new determination of the dark matter mass within the bulge-bar region of the Milky Way. That study constrains the total mass within themore » $$\\pm 2.2 \\times \\pm 1.4 \\times \\pm 1.2$$ kpc volume of the bulge-bar region to be ($$1.84 \\pm 0.07) \\times 10^{10} \\, M_{\\odot}$$, of which 9-30% is made up of dark matter. Here, we use this result to constrain the the Milky Way's dark matter density profile, and discuss the implications for indirect dark matter searches. Furthermore uncertainties remain significant, these results favor dark matter distributions with a cusped density profile. For example, for a scale radius of 20 kpc and a local dark matter density of 0.4 GeV/cm$^3$, density profiles with an inner slope of 0.69 to 1.40 are favored, approximately centered around the standard NFW value. In contrast, profiles with large flat-density cores are disfavored by this information.« less

Environmentally benign processing of YAG transparent wafers

NASA Astrophysics Data System (ADS)

Yang, Yan; Wu, Yiquan

2015-12-01

Transparent yttrium aluminum garnet (YAG) wafers were successfully produced via aqueous tape casting and vacuum sintering techniques using a new environmentally friendly binder, a copolymer of isobutylene and maleic anhydride with the commercial name ISOBAM (noted as ISOBAM). Aqueous YAG slurries were mixed by ball-milling, which was followed by de-gassing and tape casting of wafers. The final YAG green tapes were homogenous and flexible, and could be bent freely without cracking. After the drying and sintering processes, transparent YAG wafers were achieved. The microstructures of both the green tape and vacuum-sintered YAG ceramic were observed by scanning electronic microscopy (SEM). Phase compositions were examined by X-ray diffraction (XRD). Optical transmittance was measured in UV-VIS regions with the result that the transmittance is 82.6% at a wavelength of 800 nm.

Milky Way demographics with the VVV survey. I. The 84-million star colour-magnitude diagram of the Galactic bulge

NASA Astrophysics Data System (ADS)

Saito, R. K.; Minniti, D.; Dias, B.; Hempel, M.; Rejkuba, M.; Alonso-García, J.; Barbuy, B.; Catelan, M.; Emerson, J. P.; Gonzalez, O. A.; Lucas, P. W.; Zoccali, M.

2012-08-01

Context. The Milky Way (MW) bulge is a fundamental Galactic component for understanding the formation and evolution of galaxies, in particular our own. The ESO Public Survey VISTA Variables in the Vía Láctea is a deep near-IR survey mapping the Galactic bulge and southern plane. Particularly for the bulge area, VVV is covering ~315 deg2. Data taken during 2010 and 2011 covered the entire bulge area in the JHKs bands. Aims: We used VVV data for the whole bulge area as a single and homogeneous data set to build for the first time a single colour - magnitude diagram (CMD) for the entire Galactic bulge. Methods: Photometric data in the JHKs bands were combined to produce a single and huge data set containing 173 150 467 sources in the three bands, for the ~315 deg2 covered by VVV in the bulge. Selecting only the data points flagged as stellar, the total number of sources is 84 095 284. Results: We built the largest colour-magnitude diagrams published up to date, containing 173.1+ million sources for all data points, and more than 84.0 million sources accounting for the stellar sources only. The CMD has a complex shape, mostly owing to the complexity of the stellar population and the effects of extinction and reddening towards the Galactic centre. The red clump (RC) giants are seen double in magnitude at b ~ -8° -10°, while in the inner part (b ~ -3°) they appear to be spreading in colour, or even splitting into a secondary peak. Stellar population models show the predominance of main-sequence and giant stars. The analysis of the outermost bulge area reveals a well-defined sequence of late K and M dwarfs, seen at (J - Ks) ~ 0.7-0.9 mag and Ks ≳ 14 mag. Conclusions: The interpretation of the CMD yields important information about the MW bulge, showing the fingerprint of its structure and content. We report a well-defined red dwarf sequence in the outermost bulge, which is important for the planetary transit searches of VVV. The double RC in magnitude seen in the

P/N InP solar cells on Ge wafers

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Material electronic quality specifications for polycrystalline silicon wafers

NASA Astrophysics Data System (ADS)

Kalejs, J. P.

1994-06-01

As the use of polycrystalline silicon wafers has expanded in the photovoltaic industry, the need grows for monitoring and qualification techniques for as-grown material that can be used to optimize crystal growth and help predict solar cell performance. Particular needs are for obtaining quantitative measures over full wafer areas of the effects of lifetime limiting defects and of the lifetime upgrading taking place during solar cell processing. We review here the approaches being pursued in programs under way to develop material quality specifications for thin Edge-defined Film-fed Growth (EFG) polycrystalline silicon as-grown wafers. These studies involve collaborations between Mobil Solar, and NREL and university-based laboratories.

River bulge evolution and dynamics in a non-tidal sea - Daugava River plume in the Gulf of Riga, Baltic Sea

NASA Astrophysics Data System (ADS)

Soosaar, Edith; Maljutenko, Ilja; Uiboupin, Rivo; Skudra, Maris; Raudsepp, Urmas

2016-03-01

Satellite remote sensing imagery and numerical modelling were used for the study of river bulge evolution and dynamics in a non-tidal sea, the Gulf of Riga (GoR) in the Baltic Sea. Total suspended matter (TSM) images showed a clearly formed anti-cyclonically rotating river bulge from Daugava River discharge during the studied low wind period. In about 7-8 days the bulge grew up to 20 km in diameter, before being diluted. A high-resolution (horizontal grid step of 125 m) General Estuarine Transport Model (GETM) was used for detailed description of the development of the river plume in the southern GoR over the period when satellite images were acquired. In the model simulation, the bulge growth rate was estimated as rb ˜ t0.5 ± 0.04 (R2 = 0.90). Both the model simulation and the satellite images showed that river water was mainly contained in the bulge and there were numerous intrusions at the outer perimeter of the bulge. We performed numerical sensitivity tests with actual bathymetry and measured river runoff without wind forcing (1) having an initial three-dimensional density distribution, and (2) using initially a homogeneous ambient density field. In the first case, the anti-cyclonic bulge did not develop within the course of the model simulation and the coastal current was kept offshore due to ambient density-driven circulation. In the second case, the river plume developed steadily into an anti-cyclonically recirculating bulge, with rb ˜ t0.28 ± 0.01 (R2 = 0.98), and a coastal current. Additional simulations with constant cross-shore and alongshore winds showed a significant effect of the wind in the evolution of the river bulge, even if the wind speed was moderate (3-4 m s-1). While previous studies conclude that the mid-field bulge region is governed by a balance between centrifugal, Coriolis and pressure gradient terms, our study showed that geostrophic balance is valid for the entire mid-field of the bulge, except during the 1-1.5 rotation period at

River bulge evolution and dynamics in a non-tidal sea - Daugava River plume in the Gulf of Riga, Baltic Sea

NASA Astrophysics Data System (ADS)

Soosaar, E.; Maljutenko, I.; Uiboupin, R.; Skudra, M.; Raudsepp, U.

2015-10-01

Satellite remote sensing imagery and numerical modelling were used for the study of river bulge evolution and dynamics in a non-tidal sea, the Gulf of Riga (GoR) in the Baltic Sea. Total suspended matter (TSM) images showed a clearly formed anti-cyclonically rotating river bulge from Daugava River discharge during the studied low wind period. In about 7-8 days the bulge grew up to 20 km in diameter, before being diluted. Bulge growth rate was estimated as rb ~ t 0.31± 0.23 (R2 = 0.87). A high resolution (horizontal grid step of 125 m) General Estuarine Transport Model (GETM) was used for detailed description of the development of the river plume in the southern GoR over the period when satellite images were acquired. In the model simulation, the rb ~ t 0.5± 0.04 (R2 = 0.90). Both the model simulation and the satellite images showed that river water was mainly contained in the bulge and there were numerous intrusions at the outer perimeter of the bulge. We made numerical sensitivity tests with actual bathymetry and measured river runoff without wind forcing: (1) having initial 3-dimensional density distribution, (2) using initially a homogeneous ambient density field. In the first case, the anti-cyclonic bulge did not develop within the course of the model simulation and coastal current was kept offshore due to ambient density-driven circulation. In the second case, the river plume developed steadily into an anti-cyclonically recirculating bulge and a coastal current. This showed a significant effect of the wind in the evolution of the river bulge, even if the wind speed was moderate (3-4 m s-1). In the second case, rb ~ t 0.28± 0.01 (R2 = 0.98). While previous studies conclude that mid-field bulge region is governed by balance between centrifugal, Coriolis and pressure gradient terms, our study showed that geostrophic balance is valid for the entire mid-field of the bulge. In addition, while there is discharge into the homogenous GoR in case of high inflow

Near-infrared counterparts to the Galactic Bulge Survey X-ray source population

NASA Astrophysics Data System (ADS)

Greiss, S.; Steeghs, D.; Jonker, P. G.; Torres, M. A. P.; Maccarone, T. J.; Hynes, R. I.; Britt, C. T.; Nelemans, G.; Gänsicke, B. T.

2014-03-01

We report on the near-infrared matches, drawn from three surveys, to the 1640 unique X-ray sources detected by Chandra in the Galactic Bulge Survey (GBS). This survey targets faint X-ray sources in the bulge, with a particular focus on accreting compact objects. We present all viable counterpart candidates and associate a false alarm probability (FAP) to each near-infrared match in order to identify the most likely counterparts. The FAP takes into account a statistical study involving a chance alignment test, as well as considering the positional accuracy of the individual X-ray sources. We find that although the star density in the bulge is very high, ˜90 per cent of our sources have an FAP <10 per cent, indicating that for most X-ray sources, viable near-infrared counterparts candidates can be identified. In addition to the FAP, we provide positional and photometric information for candidate counterparts to ˜95 per cent of the GBS X-ray sources. This information in combination with optical photometry, spectroscopy and variability constraints will be crucial to characterize and classify secure counterparts.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Evaluation of anti-sticking layers performances for 200mm wafer scale Smart NILTM process through surface and defectivity characterizations

NASA Astrophysics Data System (ADS)

Delachat, F.; Phillipe, J.-C.; Larrey, V.; Fournel, F.; Bos, S.; Teyssèdre, H.; Chevalier, Xavier; Nicolet, Célia; Navarro, Christophe; Cayrefourcq, Ian

2018-03-01

In this work, an evaluation of various ASL processes for 200 mm wafer scale in the HERCULES® NIL equipment platform available at the CEA-Leti through the INSPIRE program is reported. The surface and adherence energies were correlated to the AFM and defectivity results in order to select the most promising ASL process for high resolution etch mask applications. The ASL performances of the selected process were evaluated by multiple working stamp fabrication using unpatterned and patterned masters though defectivity monitoring on optical based-inspection tools. Optical and SEM defect reviews were systematically performed. Multiple working stamps fabrication without degradation of the master defectivity was witnessed. This evaluation enabled to benchmark several ASL solutions based on the grafted technology develop by ARKEMA in order to reduce and optimize the soft stamp defectivity prior to its replication and therefore considerably reduce the final imprint defectivity for the Smart NIL process.

The Optical Gravitational Lensing Experiment: Analysis of the Bulge RR Lyrae Population from the OGLE-III Data

NASA Astrophysics Data System (ADS)

Pietrukowicz, P.; Udalski, A.; Soszyński, I.; Nataf, D. M.; Wyrzykowski, Ł.; Poleski, R.; Kozłowski, S.; Szymański, M. K.; Kubiak, M.; Pietrzyński, G.; Ulaczyk, K.

2012-05-01

We have analyzed the data on 16,836 RR Lyrae (RR Lyr) variables observed toward the Galactic bulge during the third phase of the Optical Gravitational Lensing Experiment (OGLE-III), which took place in 2001-2009. Using these standard candles, we show that the ratio of total-to-selective extinction toward the bulge is given by RI = AI /E(V - I) = 1.080 ± 0.007 and is independent of color. We demonstrate that the bulge RR Lyr stars form a metal-uniform population, slightly elongated in its inner part. The photometrically derived metallicity distribution is sharply peaked at [Fe/H] = -1.02 ± 0.18, with a dispersion of 0.25 dex. In the inner regions (|l| < 3°, |b| < 4°) the RR Lyr tend to follow the barred distribution of the bulge red clump giants. The distance to the Milky Way center inferred from the bulge RR Lyr is R 0 = 8.54 ± 0.42 kpc. We report a break in the mean density distribution at a distance of ~0.5 kpc from the center indicating its likely flattening. Using the OGLE-III data, we assess that (4-7) × 104 type ab RR Lyr variables should be detected toward the bulge area of the ongoing near-IR VISTA Variables in the Via Lactea (VVV) survey, where the uncertainty partially results from the unknown RR Lyr spatial density distribution within 0.2 kpc from the Galactic center.

An Optimal Strategy for Accurate Bulge-to-disk Decomposition of Disk Galaxies

NASA Astrophysics Data System (ADS)

Gao, Hua; Ho, Luis C.

2017-08-01

The development of two-dimensional (2D) bulge-to-disk decomposition techniques has shown their advantages over traditional one-dimensional (1D) techniques, especially for galaxies with non-axisymmetric features. However, the full potential of 2D techniques has yet to be fully exploited. Secondary morphological features in nearby disk galaxies, such as bars, lenses, rings, disk breaks, and spiral arms, are seldom accounted for in 2D image decompositions, even though some image-fitting codes, such as GALFIT, are capable of handling them. We present detailed, 2D multi-model and multi-component decomposition of high-quality R-band images of a representative sample of nearby disk galaxies selected from the Carnegie-Irvine Galaxy Survey, using the latest version of GALFIT. The sample consists of five barred and five unbarred galaxies, spanning Hubble types from S0 to Sc. Traditional 1D decomposition is also presented for comparison. In detailed case studies of the 10 galaxies, we successfully model the secondary morphological features. Through a comparison of best-fit parameters obtained from different input surface brightness models, we identify morphological features that significantly impact bulge measurements. We show that nuclear and inner lenses/rings and disk breaks must be properly taken into account to obtain accurate bulge parameters, whereas outer lenses/rings and spiral arms have a negligible effect. We provide an optimal strategy to measure bulge parameters of typical disk galaxies, as well as prescriptions to estimate realistic uncertainties of them, which will benefit subsequent decomposition of a larger galaxy sample.

An Optimal Strategy for Accurate Bulge-to-disk Decomposition of Disk Galaxies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao Hua; Ho, Luis C.

The development of two-dimensional (2D) bulge-to-disk decomposition techniques has shown their advantages over traditional one-dimensional (1D) techniques, especially for galaxies with non-axisymmetric features. However, the full potential of 2D techniques has yet to be fully exploited. Secondary morphological features in nearby disk galaxies, such as bars, lenses, rings, disk breaks, and spiral arms, are seldom accounted for in 2D image decompositions, even though some image-fitting codes, such as GALFIT, are capable of handling them. We present detailed, 2D multi-model and multi-component decomposition of high-quality R -band images of a representative sample of nearby disk galaxies selected from the Carnegie-Irvine Galaxymore » Survey, using the latest version of GALFIT. The sample consists of five barred and five unbarred galaxies, spanning Hubble types from S0 to Sc. Traditional 1D decomposition is also presented for comparison. In detailed case studies of the 10 galaxies, we successfully model the secondary morphological features. Through a comparison of best-fit parameters obtained from different input surface brightness models, we identify morphological features that significantly impact bulge measurements. We show that nuclear and inner lenses/rings and disk breaks must be properly taken into account to obtain accurate bulge parameters, whereas outer lenses/rings and spiral arms have a negligible effect. We provide an optimal strategy to measure bulge parameters of typical disk galaxies, as well as prescriptions to estimate realistic uncertainties of them, which will benefit subsequent decomposition of a larger galaxy sample.« less

Characterizing SOI Wafers By Use Of AOTF-PHI

NASA Technical Reports Server (NTRS)

Cheng, Li-Jen; Li, Guann-Pyng; Zang, Deyu

1995-01-01

Developmental nondestructive method of characterizing layers of silicon-on-insulator (SOI) wafer involves combination of polarimetric hyperspectral imaging by use of acousto-optical tunable filters (AOTF-PHI) and computational resources for extracting pertinent data on SOI wafers from polarimetric hyperspectral images. Offers high spectral resolution and both ease and rapidity of optical-wavelength tuning. Further efforts to implement all of processing of polarimetric spectral image data in special-purpose hardware for sake of procesing speed. Enables characterization of SOI wafers in real time for online monitoring and adjustment of production. Also accelerates application of AOTF-PHI to other applications in which need for high-resolution spectral imaging, both with and without polarimetry.

Reliability and Characteristics of Wafer-Level Chip-Scale Packages under Current Stress

NASA Astrophysics Data System (ADS)

Chen, Po-Ying; Kung, Heng-Yu; Lai, Yi-Shao; Hsiung Tsai, Ming; Yeh, Wen-Kuan

2008-02-01

In this work, we present a novel approach and method for elucidating the characteristics of wafer-level chip-scale packages (WLCSPs) for electromigration (EM) tests. The die in WLCSP was directly attached to the substrate via a soldered interconnect. The shrinking of the area of the die that is available for power, and the solder bump also shrinks the volume and increases the density of electrons for interconnect efficiency. The bump current density now approaches to 106 A/cm2, at which point the EM becomes a significant reliability issue. As known, the EM failure depends on numerous factors, including the working temperature and the under bump metallization (UBM) thickness. A new interconnection geometry is adopted extensively with moderate success in overcoming larger mismatches between the displacements of components during current and temperature changes. Both environments and testing parameters for WLCSP are increasingly demanded. Although failure mechanisms are considered to have been eliminated or at least made manageable, new package technologies are again challenging its process, integrity and reliability. WLCSP technology was developed to eliminate the need for encapsulation to ensure compatibility with smart-mount technology (SMT). The package has good handing properties but is now facing serious reliability problems. In this work, we investigated the reliability of a WLCSP subjected to different accelerated current stressing conditions at a fixed ambient temperature of 125 °C. A very strong correlation exists between the mean time to failure (MTTF) of the WLCSP test vehicle and the mean current density that is carried by a solder joint. A series of current densities were applied to the WLCSP architecture; Black's power law was employed in a failure mode simulation. Additionally, scanning electron microscopy (SEM) was adopted to determine the differences existing between high- and low-current-density failure modes.

VLED for Si wafer-level packaging

NASA Astrophysics Data System (ADS)

Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

2012-03-01

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Miniature bulge test and energy release rate in HIPed aluminum/aluminum interfacial fracture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Lovato, M. L.; Clarke, K. D.

We summarize the development of a technique of using miniature bulge test combined with three-dimensional digital image correlation (3D-DIC) for measuring energy release rate or fracture toughness of bimaterial interface of thin metal foils. Furthermore, the energy release rate associated with the HIPed aluminum/aluminum interfacial delamination is determined experimentally using the proposed technique. Detailed discussions of the schemes of preparing and conducting the bulge test, and computing various quantities required for the determination of the energy release rate are presented.

Miniature bulge test and energy release rate in HIPed aluminum/aluminum interfacial fracture

DOE PAGES

Liu, C.; Lovato, M. L.; Clarke, K. D.; ...

2017-10-13

We summarize the development of a technique of using miniature bulge test combined with three-dimensional digital image correlation (3D-DIC) for measuring energy release rate or fracture toughness of bimaterial interface of thin metal foils. Furthermore, the energy release rate associated with the HIPed aluminum/aluminum interfacial delamination is determined experimentally using the proposed technique. Detailed discussions of the schemes of preparing and conducting the bulge test, and computing various quantities required for the determination of the energy release rate are presented.

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

NASA Astrophysics Data System (ADS)

Avizemer, Dan; Sharoni, Ofir; Oshemkov, Sergey; Cohen, Avi; Dayan, Asaf; Khurana, Ranjan; Kewley, Dave

2015-07-01

Requirements for control of critical dimension (CD) become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter. Critical dimension control, also known as CDC, is a well-known laser-based process in the IC industry that has proven to be robust, repeatable, and efficient in adjusting wafer CD uniformity (CDU) [Proc. SPIE 6152, 615225 (2006)]. The process involves locally and selectively attenuating the deep ultraviolet light which goes through the photomask to the wafer. The input data for the CDC process in the wafer fab is typically taken from wafer CDU data, which is measured by metrology tools such as wafer-critical dimension-scanning electron microscopy (CD-SEM), wafer optical scatterometry, or wafer level CD (WLCD). The CD correction process uses the CDU data in order to create an attenuation correction contour, which is later applied by the in-situ ultrashort laser system of the CDC to locally change the transmission of the photomask. The ultrashort pulsed laser system creates small, partially scattered, Shade-In-Elements (also known as pixels) by focusing the laser beam inside the quartz bulk of the photomask. This results in the formation of a localized, intravolume, quartz modified area, which has a different refractive index than the quartz bulk itself. The CDC process flow for improving wafer CDU in a wafer fab with detailed explanations of the shading elements formation inside the quartz by the ultrashort pulsed laser is reviewed.

Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

NASA Astrophysics Data System (ADS)

Goto, Hiroyuki; Pan, Lian-Sheng; Tanaka, Masafumi; Kashima, Kazuhiko

2001-06-01

The properties of nitrogen-doped and hydrogen-annealed Czochralski-grown silicon (NHA-CZ-Si) wafers were investigated in this study. The quality of the subsurface was investigated by monitoring the generation lifetime of minority carriers, as measured by the capacitance-time measurements of a metal oxide silicon capacitor (MOS C-t). The intrinsic gettering (IG) ability was investigated by determining the nickel concentration on the surface and in the subsurface as measured by graphite furnace atomic absorption spectrometry (GFAAS) after the wafer was deliberately contaminated with nickel. From the results obtained, the generation lifetimes of these NHA-CZ-Si wafers were determined to be almost the same as, or a little longer than those of epitaxial wafers, and the IG ability was proportional to the total volume of oxygen precipitates [i.e., bulk micro defects (BMDs)], which was influenced by the oxygen and nitrogen concentrations in the wafers. Therefore, it is suggested that the subsurface of the NHA-CZ-Si wafers is of good quality and the IG capacity is controllable by the nitrogen and oxygen concentrations in the wafers.

CONSTRAINTS ON THE FORMATION OF THE GALACTIC BULGE FROM Na, Al, AND HEAVY-ELEMENT ABUNDANCES IN PLAUT's FIELD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Christian I.; Rich, R. Michael; Kobayashi, Chiaki

2012-04-20

We report chemical abundances of Na, Al, Zr, La, Nd, and Eu for 39 red giant branch (RGB) stars and 23 potential inner disk red clump stars located in Plaut's low-extinction window. We also measure lithium for a super Li-rich RGB star. The abundances were determined by spectrum synthesis of high-resolution (R Almost-Equal-To 25,000), high signal-to-noise (S/N {approx} 50-100 pixel{sup -1}) spectra obtained with the Blanco 4 m telescope and Hydra multifiber spectrograph. For the bulge RGB stars, we find a general increase in the [Na/Fe] and [Na/Al] ratios with increasing metallicity, and a similar decrease in [La/Fe] and [Nd/Fe].more » Additionally, the [Al/Fe] and [Eu/Fe] abundance trends almost identically follow those of the {alpha}-elements, and the [Zr/Fe] ratios exhibit relatively little change with [Fe/H]. The consistently low [La/Eu] ratios of the RGB stars indicate that at least a majority of bulge stars formed rapidly ({approx}<1 Gyr) and before the main s-process could become a significant pollution source. In contrast, we find that the potential inner disk clump stars exhibit abundance patterns more similar to those of the thin and thick disks. Comparisons between the abundance trends at different bulge locations suggest that the inner and outer bulges formed on similar timescales. However, we find evidence of some abundance differences between the most metal-poor and metal-rich stars in various bulge fields. The data also indicate that the halo may have had a more significant impact on the outer bulge initial composition than the inner bulge composition. The [Na/Fe], and to a lesser extent [La/Fe], abundances further indicate that the metal-poor bulge, at least at {approx}1 kpc from the Galactic center, and thick disk may not share an identical chemistry.« less

Making Porous Luminescent Regions In Silicon Wafers

NASA Technical Reports Server (NTRS)

Fathauer, Robert W.; Jones, Eric W.

1994-01-01

Regions damaged by ion implantation stain-etched. Porous regions within single-crystal silicon wafers fabricated by straightforward stain-etching process. Regions exhibit visible photoluminescence at room temperature and might constitute basis of novel class of optoelectronic devices. Stain-etching process has advantages over recently investigated anodic-etching process. Process works on both n-doped and p-doped silicon wafers. Related development reported in article, "Porous Si(x)Ge(1-x) Layers Within Single Crystals of Si," (NPO-18836).

The mechanics of decompressive craniectomy: Bulging in idealized geometries

NASA Astrophysics Data System (ADS)

Weickenmeier, Johannes; Kuhl, Ellen; Goriely, Alain

2016-11-01

In extreme cases of traumatic brain injury or a stroke, the resulting uncontrollable swelling of the brain may lead to a harmful increase of the intracranial pressure. As a common measure for immediate release of pressure on the brain, part of the skull is surgically removed allowing for the brain to bulge outwards, a procedure known as a decompressive craniectomy. During this excessive brain swelling, the affected tissue typically undergoes large deformations resulting in a complex three-dimensional mechanical loading state with several important implications on optimal treatment strategies and outcome. Here, as a first step towards a better understanding of the mechanics of a decompressive craniectomy, we consider simple models for the bulging of elastic solids under geometric constraints representative of the surgical intervention. In small deformations and simple geometries, the exact solution of this problem is derived from the theory of contact mechanics. The analysis of these solutions reveals a number of interesting generic features relevant for the mechanics of craniectomy.

Strategy optimization for mask rule check in wafer fab

NASA Astrophysics Data System (ADS)

Yang, Chuen Huei; Lin, Shaina; Lin, Roger; Wang, Alice; Lee, Rachel; Deng, Erwin

2015-07-01

Photolithography process is getting more and more sophisticated for wafer production following Moore's law. Therefore, for wafer fab, consolidated and close cooperation with mask house is a key to achieve silicon wafer success. However, generally speaking, it is not easy to preserve such partnership because many engineering efforts and frequent communication are indispensable. The inattentive connection is obvious in mask rule check (MRC). Mask houses will do their own MRC at job deck stage, but the checking is only for identification of mask process limitation including writing, etching, inspection, metrology, etc. No further checking in terms of wafer process concerned mask data errors will be implemented after data files of whole mask are composed in mask house. There are still many potential data errors even post-OPC verification has been done for main circuits. What mentioned here are the kinds of errors which will only occur as main circuits combined with frame and dummy patterns to form whole reticle. Therefore, strategy optimization is on-going in UMC to evaluate MRC especially for wafer fab concerned errors. The prerequisite is that no impact on mask delivery cycle time even adding this extra checking. A full-mask checking based on job deck in gds or oasis format is necessary in order to secure acceptable run time. Form of the summarized error report generated by this checking is also crucial because user friendly interface will shorten engineers' judgment time to release mask for writing. This paper will survey the key factors of MRC in wafer fab.

Wafer plane inspection for advanced reticle defects

NASA Astrophysics Data System (ADS)

Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

2008-05-01

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

Peanuts, brezels and bananas: food for thought on the orbital structure of the Galactic bulge

NASA Astrophysics Data System (ADS)

Portail, Matthieu; Wegg, Christopher; Gerhard, Ortwin

2015-06-01

Recent observations have discovered the presence of a box/peanut or X-shape structure in the Galactic bulge. Such box/peanut structures are common in external disc galaxies, and are well known in N-body simulations where they form following the buckling instability of a bar. From studies of analytical potentials and N-body models, it has been claimed in the past that box/peanut bulges are supported by `bananas', or x1v1 orbits. We present here a set of N-body models where instead the peanut bulge is mainly supported by brezel-like orbits, allowing strong peanuts to form with short extent relative to the bar length. This shows that stars in the X-shape do not necessarily stream along banana orbits which follow the arms of the X-shape. The brezel orbits are also found to be the main orbital component supporting the peanut shape in our recent made-to-measure dynamical models of the Galactic bulge. We also show that in these models the fraction of stellar orbits that contribute to the X-structure account for 40-45 per cent of the stellar mass.

LBSizeCleav: improved support vector machine (SVM)-based prediction of Dicer cleavage sites using loop/bulge length.

PubMed

Bao, Yu; Hayashida, Morihiro; Akutsu, Tatsuya

2016-11-25

Dicer is necessary for the process of mature microRNA (miRNA) formation because the Dicer enzyme cleaves pre-miRNA correctly to generate miRNA with correct seed regions. Nonetheless, the mechanism underlying the selection of a Dicer cleavage site is still not fully understood. To date, several studies have been conducted to solve this problem, for example, a recent discovery indicates that the loop/bulge structure plays a central role in the selection of Dicer cleavage sites. In accordance with this breakthrough, a support vector machine (SVM)-based method called PHDCleav was developed to predict Dicer cleavage sites which outperforms other methods based on random forest and naive Bayes. PHDCleav, however, tests only whether a position in the shift window belongs to a loop/bulge structure. In this paper, we used the length of loop/bulge structures (in addition to their presence or absence) to develop an improved method, LBSizeCleav, for predicting Dicer cleavage sites. To evaluate our method, we used 810 empirically validated sequences of human pre-miRNAs and performed fivefold cross-validation. In both 5p and 3p arms of pre-miRNAs, LBSizeCleav showed greater prediction accuracy than PHDCleav did. This result suggests that the length of loop/bulge structures is useful for prediction of Dicer cleavage sites. We developed a novel algorithm for feature space mapping based on the length of a loop/bulge for predicting Dicer cleavage sites. The better performance of our method indicates the usefulness of the length of loop/bulge structures for such predictions.

Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism

NASA Astrophysics Data System (ADS)

Sonde, Sushant; Dolocan, Andrei; Lu, Ning; Corbet, Chris; Kim, Moon J.; Tutuc, Emanuel; Banerjee, Sanjay K.; Colombo, Luigi

2017-06-01

Chemical vapor deposition (CVD) of two-dimensional (2D) hexagonal boron nitride (h-BN) is at the center of numerous studies for its applications in novel electronic devices. However, a clear understanding of the growth mechanism is lacking for its wider industrial adoption on technologically relevant substrates such as SiO2. Here, we demonstrate a controllable growth method of thin, wafer scale h-BN films on arbitrary substrates. We also clarify the growth mechanism to be diffusion and surface segregation (D-SS) of boron (B) and nitrogen (N) in Ni and Co thin films on SiO2/Si substrates after exposure to diborane and ammonia precursors at high temperature. The segregation was found to be independent of the cooling rates employed in this report, and to our knowledge has not been found nor reported for 2D h-BN growth so far, and thus provides an important direction for controlled growth of h-BN. This unique segregation behavior is a result of a combined effect of high diffusivity, small film thickness and the inability to achieve extremely high cooling rates in CVD systems. The resulting D-SS h-BN films exhibit excellent electrical insulating behavior with an optical bandgap of about 5.8 eV. Moreover, graphene-on-h-BN field effect transistors using the as-grown D-SS h-BN films show a mobility of about 6000 cm2 V-1 s-1 at room temperature.

The uses of Man-Made diamond in wafering applications

NASA Technical Reports Server (NTRS)

Fallon, D. B.

1982-01-01

The continuing, rapid growth of the semiconductor industry requires the involvement of several specialized industries in the development of special products geared toward the unique requirements of this new industry. A specialized manufactured diamond to meet various material removal needs was discussed. The area of silicon wafer slicing has presented yet anothr challenge and it is met most effectively. The history, operation, and performance of Man-Made diamond and particularly as applied to silicon wafer slicing is discussed. Product development is underway to come up with a diamond specifically for sawing silicon wafers on an electroplated blade.

Developing quartz wafer mold manufacturing process for patterned media

NASA Astrophysics Data System (ADS)

Chiba, Tsuyoshi; Fukuda, Masaharu; Ishikawa, Mikio; Itoh, Kimio; Kurihara, Masaaki; Hoga, Morihisa

2009-04-01

Recently, patterned media have gained attention as a possible candidate for use in the next generation of hard disk drives (HDD). Feature sizes on media are predicted to be 20-25 nm half pitch (hp) for discrete-track media in 2010. One method of fabricating such a fine pattern is by using a nanoimprint. The imprint mold for the patterned media is created from a 150-millimeter, rounded, quartz wafer. The purpose of the process introduced here was to construct a quartz wafer mold and to fabricate line and space (LS) patterns at 24 nmhp for DTM. Additionally, we attempted to achieve a dense hole (HOLE) pattern at 12.5 nmhp for BPM for use in 2012. The manufacturing process of molds for patterned media is almost the same as that for semiconductors, with the exception of the dry-etching process. A 150-millimeter quartz wafer was etched on a special tray made from carving a 6025 substrate, by using the photo-mask tool. We also optimized the quartz etching conditions. As a result, 24 nmhp LS and HOLE patterns were manufactured on the quartz wafer. In conclusion, the quartz wafer mold manufacturing process was established. It is suggested that the etching condition should be further optimized to achieve a higher resolution of HOLE patterns.

Genetically induced cell death in bulge stem cells reveals their redundancy for hair and epidermal regeneration.

PubMed

Driskell, Iwona; Oeztuerk-Winder, Feride; Humphreys, Peter; Frye, Michaela

2015-03-01

Adult mammalian epidermis contains multiple stem cell populations in which quiescent and more proliferative stem and progenitor populations coexist. However, the precise interrelation of these populations in homeostasis remains unclear. Here, we blocked the contribution of quiescent keratin 19 (K19)-expressing bulge stem cells to hair follicle formation through genetic ablation of the essential histone methyltransferase Setd8 that is required for the maintenance of adult skin. Deletion of Setd8 eliminated the contribution of bulge cells to hair follicle regeneration through inhibition of cell division and induction of cell death, but the growth and morphology of hair follicles were unaffected. Furthermore, ablation of Setd8 in the hair follicle bulge blocked the contribution of K19-postive stem cells to wounded epidermis, but the wound healing process was unaltered. Our data indicate that quiescent bulge stem cells are dispensable for hair follicle regeneration and epidermal injury in the short term and support the hypothesis that quiescent and cycling stem cell populations are equipotent. © 2014 AlphaMed Press.

From a structural average to the conformational ensemble of a DNA bulge

PubMed Central

Shi, Xuesong; Beauchamp, Kyle A.; Harbury, Pehr B.; Herschlag, Daniel

2014-01-01

Direct experimental measurements of conformational ensembles are critical for understanding macromolecular function, but traditional biophysical methods do not directly report the solution ensemble of a macromolecule. Small-angle X-ray scattering interferometry has the potential to overcome this limitation by providing the instantaneous distance distribution between pairs of gold-nanocrystal probes conjugated to a macromolecule in solution. Our X-ray interferometry experiments reveal an increasing bend angle of DNA duplexes with bulges of one, three, and five adenosine residues, consistent with previous FRET measurements, and further reveal an increasingly broad conformational ensemble with increasing bulge length. The distance distributions for the AAA bulge duplex (3A-DNA) with six different Au-Au pairs provide strong evidence against a simple elastic model in which fluctuations occur about a single conformational state. Instead, the measured distance distributions suggest a 3A-DNA ensemble with multiple conformational states predominantly across a region of conformational space with bend angles between 24 and 85 degrees and characteristic bend directions and helical twists and displacements. Additional X-ray interferometry experiments revealed perturbations to the ensemble from changes in ionic conditions and the bulge sequence, effects that can be understood in terms of electrostatic and stacking contributions to the ensemble and that demonstrate the sensitivity of X-ray interferometry. Combining X-ray interferometry ensemble data with molecular dynamics simulations gave atomic-level models of representative conformational states and of the molecular interactions that may shape the ensemble, and fluorescence measurements with 2-aminopurine-substituted 3A-DNA provided initial tests of these atomistic models. More generally, X-ray interferometry will provide powerful benchmarks for testing and developing computational methods. PMID:24706812

SDSS-IV MaNGA: bulge-disc decomposition of IFU data cubes (BUDDI)

NASA Astrophysics Data System (ADS)

Johnston, Evelyn J.; Häußler, Boris; Aragón-Salamanca, Alfonso; Merrifield, Michael R.; Bamford, Steven; Bershady, Matthew A.; Bundy, Kevin; Drory, Niv; Fu, Hai; Law, David; Nitschelm, Christian; Thomas, Daniel; Roman Lopes, Alexandre; Wake, David; Yan, Renbin

2017-02-01

With the availability of large integral field unit (IFU) spectral surveys of nearby galaxies, there is now the potential to extract spectral information from across the bulges and discs of galaxies in a systematic way. This information can address questions such as how these components built up with time, how galaxies evolve and whether their evolution depends on other properties of the galaxy such as its mass or environment. We present bulge-disc decomposition of IFU data cubes (BUDDI), a new approach to fit the two-dimensional light profiles of galaxies as a function of wavelength to extract the spectral properties of these galaxies' discs and bulges. The fitting is carried out using GALFITM, a modified form of GALFIT which can fit multiwaveband images simultaneously. The benefit of this technique over traditional multiwaveband fits is that the stellar populations of each component can be constrained using knowledge over the whole image and spectrum available. The decomposition has been developed using commissioning data from the Sloan Digital Sky Survey-IV Mapping Nearby Galaxies at APO (MaNGA) survey with redshifts z < 0.14 and coverage of at least 1.5 effective radii for a spatial resolution of 2.5 arcsec full width at half-maximum and field of view of > 22 arcsec, but can be applied to any IFU data of a nearby galaxy with similar or better spatial resolution and coverage. We present an overview of the fitting process, the results from our tests, and we finish with example stellar population analyses of early-type galaxies from the MaNGA survey to give an indication of the scientific potential of applying bulge-disc decomposition to IFU data.

Imaging Study of Multi-Crystalline Silicon Wafers Throughout the Manufacturing Process: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, S.; Yan, F.; Zaunbracher, K.

2011-07-01

Imaging techniques are applied to multi-crystalline silicon bricks, wafers at various process steps, and finished solar cells. Photoluminescence (PL) imaging is used to characterize defects and material quality on bricks and wafers. Defect regions within the wafers are influenced by brick position within an ingot and height within the brick. The defect areas in as-cut wafers are compared to imaging results from reverse-bias electroluminescence and dark lock-in thermography and cell parameters of near-neighbor finished cells. Defect areas are also characterized by defect band emissions. The defect areas measured by these techniques on as-cut wafers are shown to correlate to finishedmore » cell performance.« less

Edge printability: techniques used to evaluate and improve extreme wafer edge printability

NASA Astrophysics Data System (ADS)

Roberts, Bill; Demmert, Cort; Jekauc, Igor; Tiffany, Jason P.

2004-05-01

The economics of semiconductor manufacturing have forced process engineers to develop techniques to increase wafer yield. Improvements in process controls and uniformities in all areas of the fab have reduced film thickness variations at the very edge of the wafer surface. This improved uniformity has provided the opportunity to consider decreasing edge exclusions, and now the outermost extents of the wafer must be considered in the yield model and expectations. These changes have increased the requirements on lithography to improve wafer edge printability in areas that previously were not even coated. This has taxed all software and hardware components used in defining the optical focal plane at the wafer edge. We have explored techniques to determine the capabilities of extreme wafer edge printability and the components of the systems that influence this printability. We will present current capabilities and new detection techniques and the influence that the individual hardware and software components have on edge printability. We will show effects of focus sensor designs, wafer layout, utilization of dummy edge fields, the use of non-zero overlay targets and chemical/optical edge bead optimization.

Wafer-shape metrics based foundry lithography

NASA Astrophysics Data System (ADS)

Kim, Sungtae; Liang, Frida; Mileham, Jeffrey; Tsai, Damon; Bouche, Eric; Lee, Sean; Huang, Albert; Hua, C. F.; Wei, Ming Sheng

2017-03-01

As device shrink, there are many difficulties with process integration and device yield. Lithography process control is expected to be a major challenge due to tighter overlay and focus control requirement. The understanding and control of stresses accumulated during device fabrication has becoming more critical at advanced technology nodes. Within-wafer stress variations cause local wafer distortions which in turn present challenges for managing overlay and depth of focus during lithography. A novel technique for measuring distortion is Coherent Gradient Sensing (CGS) interferometry, which is capable of generating a high-density distortion data set of the full wafer within a time frame suitable for a high volume manufacturing (HVM) environment. In this paper, we describe the adoption of CGS (Coherent Gradient Sensing) interferometry into high volume foundry manufacturing to overcome these challenges. Leveraging this high density 3D metrology, we characterized its In-plane distortion as well as its topography capabilities applied to the full flow of an advanced foundry manufacturing. Case studies are presented that summarize the use of CGS data to reveal correlations between in-plane distortion and overlay variation as well as between topography and device yield.

DISCOVERY OF RR LYRAE STARS IN THE NUCLEAR BULGE OF THE MILKY WAY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minniti, Dante; Ramos, Rodrigo Contreras; Zoccali, Manuela

Galactic nuclei, such as that of the Milky Way, are extreme regions with high stellar densities, and in most cases, the hosts of a supermassive black hole. One of the scenarios proposed for the formation of the Galactic nucleus is merging of primordial globular clusters. An implication of this model is that this region should host stars that are characteristically found in old Milky Way globular clusters. RR Lyrae stars are primary distance indicators, well known representatives of old and metal-poor stellar populations, and therefore are regularly found in globular clusters. Here we report the discovery of a dozen RRmore » Lyrae type ab stars in the vicinity of the Galactic center, i.e., in the so-called nuclear stellar bulge of the Milky Way. This discovery provides the first direct observational evidence that the Galactic nuclear stellar bulge contains ancient stars (>10 Gyr old). Based on this we conclude that merging globular clusters likely contributed to the build-up of the high stellar density in the nuclear stellar bulge of the Milky Way.« less

POWERFUL RADIO EMISSION FROM LOW-MASS SUPERMASSIVE BLACK HOLES FAVORS DISK-LIKE BULGES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, J.; Xu, Y.; Xu, D. W.

The origin of spin of low-mass supermassive black holes (SMBHs) is still a puzzle at present. We report here a study on the host galaxies of a sample of radio-selected nearby ( z < 0.05) Seyfert 2 galaxies with a BH mass of 10{sup 6–7} M{sub ⊙}. By modeling the SDSS r -band images of these galaxies through a two-dimensional bulge+disk decomposition, we identify a new dependence of SMBH's radio power on host bulge surface brightness profiles, in which more powerful radio emission comes from an SMBH associated with a more disk-like bulge. This result means low-mass and high-mass SMBHsmore » are spun up by two entirely different modes that correspond to two different evolutionary paths. A low-mass SMBH is spun up by a gas accretion with significant disk-like rotational dynamics of the host galaxy in the secular evolution, while a high-mass one by a BH–BH merger in the merger evolution.« less

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

NASA Astrophysics Data System (ADS)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Multi-wafer bonding technology for the integration of a micromachined Mirau interferometer

NASA Astrophysics Data System (ADS)

Wang, Wei-Shan; Lullin, Justine; Froemel, Joerg; Wiemer, Maik; Bargiel, Sylwester; Passilly, Nicolas; Gorecki, Christophe; Gessner, Thomas

2015-02-01

The paper presents the multi-wafer bonding technology as well as the integration of electrical connection to the zscanner wafer of the micromachined array-type Mirau interferometer. A Mirau interferometer, which is a key-component of optical coherence tomography (OCT) microsystem, consists of a microlens doublet, a MOEMS Z-scanner, a focusadjustment spacer and a beam splitter plate. For the integration of this MOEMS device heterogeneous bonding of Si, glass and SOI wafers is necessary. Previously, most of the existing methods for multilayer wafer bonding require annealing at high temperature, i.e., 1100°C. To be compatible with MEMS devices, bonding of different material stacks at temperatures lower than 400°C has also been investigated. However, if more components are involved, it becomes less effective due to the alignment accuracy or degradation of surface quality of the not-bonded side after each bonding operation. The proposed technology focuses on 3D integration of heterogeneous building blocks, where the assembly process is compatible with the materials of each wafer stack and with position accuracy which fits optical requirement. A demonstrator with up to 5 wafers bonded lower than 400°C is presented and bond interfaces are evaluated. To avoid the complexity of through wafer vias, a design which creates electrical connections along vertical direction by mounting a wafer stack on a flip chip PCB is proposed. The approach, which adopts vertically-stacked wafers along with electrical connection functionality, provides not only a space-effective integration of MOEMS device but also a design where the Mirau stack can be further integrated with other components of the OCT microsystem easily.

Localized bulging in an inflated cylindrical tube of arbitrary thickness - the effect of bending stiffness

NASA Astrophysics Data System (ADS)

Fu, Y. B.; Liu, J. L.; Francisco, G. S.

2016-05-01

We study localized bulging of a cylindrical hyperelastic tube of arbitrary thickness when it is subjected to the combined action of inflation and axial extension. It is shown that with the internal pressure P and resultant axial force F viewed as functions of the azimuthal stretch on the inner surface and the axial stretch, the bifurcation condition for the initiation of a localized bulge is that the Jacobian of the vector function (P , F) should vanish. This is established using the dynamical systems theory by first computing the eigenvalues of a certain eigenvalue problem governing incremental deformations, and then deriving the bifurcation condition explicitly. The bifurcation condition is valid for all loading conditions, and in the special case of fixed resultant axial force it gives the expected result that the initiation pressure for localized bulging is precisely the maximum pressure in uniform inflation. It is shown that even if localized bulging cannot take place when the axial force is fixed, it is still possible if the axial stretch is fixed instead. The explicit bifurcation condition also provides a means to quantify precisely the effect of bending stiffness on the initiation pressure. It is shown that the (approximate) membrane theory gives good predictions for the initiation pressure, with a relative error less than 5%, for thickness/radius ratios up to 0.67. A two-term asymptotic bifurcation condition for localized bulging that incorporates the effect of bending stiffness is proposed, and is shown to be capable of giving extremely accurate predictions for the initiation pressure for thickness/radius ratios up to as large as 1.2.

Chemical Abundances of Planetary Nebulae in the Bulge and Disk of M31

NASA Technical Reports Server (NTRS)

Jacoby, George H.; Ciardullo, Robin

1998-01-01

We derive abundances and central star parameters for 15 planetary nebulae (PNe) in M31: 12 in the bulge and 3 in a disk field 14 kpc from the nucleus. No single abundance value characterizes the bulge stars: although the median abundances of the sample are similar to those seen for PNe in the LMC, the distribution of abundances is several times broader, spanning over 1 decade. None of the PNe in our sample approach the super metal-rich ([Fe/H] approximately 0.25) expectations for the bulge of M31, although a few PNe in the sample of Stasinska, Richer, & Mc Call (1998) come close. This [O/H] vs [Fe/H] discrepancy is likely due to a combination of factors, including an inability of metal-rich stars to produce bright PNe, a luminosity selection effect, and an abundance gradient in the bulge of M31. We show that PNe that are near the bright limit of the [O III] lambda.5007 planetary nebula luminosity function (PNLF) span nearly a decade in oxygen abundance, and thus, support the use of the PNLF for deriving distances to galaxies (Jacoby 1996) with differing metallicities. We also identify a correlation between central star mass and PN dust formation that partially alleviates any dependence of the PNLF maximum magnitude on population age. Additionally, we identify a spatially compact group of 5 PNe having unusually high O/H; this subgroup may arise from a recent merger, but velocity information is needed to assess the true nature of the objects.

Peanut-shaped metallicity distributions in bulges of edge-on galaxies: the case of NGC 4710

NASA Astrophysics Data System (ADS)

Gonzalez, Oscar A.; Debattista, Victor P.; Ness, Melissa; Erwin, Peter; Gadotti, Dimitri A.

2017-03-01

Bulges of edge-on galaxies are often boxy/peanut-shaped (B/PS), and unsharp masks reveal the presence of an X shape. Simulations show that these shapes can be produced by dynamical processes driven by a bar which vertically thickens the centre. In the Milky Way, which contains such a B/PS bulge, the X-shaped structure is traced by the metal-rich stars but not by the metal-poor ones. Recently, Debattista et al. interpreted this property as a result of the varying effect of the bar on stellar populations with different starting kinematics. This kinematic fractionation model predicts that cooler populations at the time of bar formation go on to trace the X shape, whereas hotter populations are more uniformly distributed. As this prediction is not specific to the Milky Way, we test it with Multi Unit Spectroscopic Explorer (MUSE) observations of the B/PS bulge in the nearby galaxy NGC 4710. We show that the metallicity map is more peanut-shaped than the density distribution itself, in good agreement with the prediction. This result indicates that the X-shaped structure in B/PS bulges is formed of relatively metal-rich stars that have been vertically redistributed by the bar, whereas the metal-poor stars have a more uniform, box-shaped distribution.

Research on Al-alloy sheet forming formability during warm/hot sheet hydroforming based on elliptical warm bulging test

NASA Astrophysics Data System (ADS)

Cai, Gaoshen; Wu, Chuanyu; Gao, Zepu; Lang, Lihui; Alexandrov, Sergei

2018-05-01

An elliptical warm/hot sheet bulging test under different temperatures and pressure rates was carried out to predict Al-alloy sheet forming limit during warm/hot sheet hydroforming. Using relevant formulas of ultimate strain to calculate and dispose experimental data, forming limit curves (FLCS) in tension-tension state of strain (TTSS) area are obtained. Combining with the basic experimental data obtained by uniaxial tensile test under the equivalent condition with bulging test, complete forming limit diagrams (FLDS) of Al-alloy are established. Using a quadratic polynomial curve fitting method, material constants of fitting function are calculated and a prediction model equation for sheet metal forming limit is established, by which the corresponding forming limit curves in TTSS area can be obtained. The bulging test and fitting results indicated that the sheet metal FLCS obtained were very accurate. Also, the model equation can be used to instruct warm/hot sheet bulging test.

Imaging ATUM ultrathin section libraries with WaferMapper: a multi-scale approach to EM reconstruction of neural circuits

PubMed Central

Hayworth, Kenneth J.; Morgan, Josh L.; Schalek, Richard; Berger, Daniel R.; Hildebrand, David G. C.; Lichtman, Jeff W.

2014-01-01

The automated tape-collecting ultramicrotome (ATUM) makes it possible to collect large numbers of ultrathin sections quickly—the equivalent of a petabyte of high resolution images each day. However, even high throughput image acquisition strategies generate images far more slowly (at present ~1 terabyte per day). We therefore developed WaferMapper, a software package that takes a multi-resolution approach to mapping and imaging select regions within a library of ultrathin sections. This automated method selects and directs imaging of corresponding regions within each section of an ultrathin section library (UTSL) that may contain many thousands of sections. Using WaferMapper, it is possible to map thousands of tissue sections at low resolution and target multiple points of interest for high resolution imaging based on anatomical landmarks. The program can also be used to expand previously imaged regions, acquire data under different imaging conditions, or re-image after additional tissue treatments. PMID:25018701

Wafer chamber having a gas curtain for extreme-UV lithography

DOEpatents

Kanouff, Michael P.; Ray-Chaudhuri, Avijit K.

2001-01-01

An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayari, Taha; Li, Xin; Voss, Paul L.

Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure tomore » be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.« less

a Study of the AGB in Local Group Bulge Populations

NASA Astrophysics Data System (ADS)

Rich, R.

1994-01-01

We propose to survey the bolometric luminosities, colors, and space distribution of the most luminous asymptotic giant branch (AGB) stars in the bulges of M31, M32, and M33. We seek to discover whether the bulges of these galaxies are relatively young, of order 10 Gyr rather than 15 Gyr. We will use WFPC2 and the R, I, and F1042M (1 micron) filters. Knowing that F1042M falls on the first continuum point of M giants, we have shown that we can use 1.04 micron fluxes to reliably calculate bolometric magnitudes for these very red stars. Color information from R and I will permit (1) comparison with Galactic bulge M giants, (2) an estimate of the spread of abundance and (3) increase the accuracy of the bolometric magnitudes. Frames with the damaged HST show signs of resolution to within 3" of the M31 nucleus; Red images with the aberrated HST show a red star cluster associated with the nucleus. Ground-based studies of M32 find an intermediate-age population from spectroscopy and infrared photometry. The repaired HST should resolve stars close to the nuclei of these galaxies. We will measure bolometric luminosity functions to determine if the populations are intermediate age, and attempt to measure the abundance range for stars near the nuclei of these galaxies. If metals have been lost due to winds, theory predicts that we should see a substantial spread of abundances even near the nucleus.

Ultra-Gradient Test Cavity for Testing SRF Wafer Samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

N.J. Pogue, P.M. McIntyre, A.I. Sattarov, C. Reece

2010-11-01

A 1.3 GHz test cavity has been designed to test wafer samples of superconducting materials. This mushroom shaped cavity, operating in TE01 mode, creates a unique distribution of surface fields. The surface magnetic field on the sample wafer is 3.75 times greater than elsewhere on the Niobium cavity surface. This field design is made possible through dielectrically loading the cavity by locating a hemisphere of ultra-pure sapphire just above the sample wafer. The sapphire pulls the fields away from the walls so the maximum field the Nb surface sees is 25% of the surface field on the sample. In thismore » manner, it should be possible to drive the sample wafer well beyond the BCS limit for Niobium while still maintaining a respectable Q. The sapphire's purity must be tested for its loss tangent and dielectric constant to finalize the design of the mushroom test cavity. A sapphire loaded CEBAF cavity has been constructed and tested. The results on the dielectric constant and loss tangent will be presented« less

In vitro and in vivo evaluation of a sublingual fentanyl wafer formulation

PubMed Central

Lim, Stephen CB; Paech, Michael J; Sunderland, Bruce; Liu, Yandi

2013-01-01

Background The objective of this study was to prepare a novel fentanyl wafer formulation by a freeze-drying method, and to evaluate its in vitro and in vivo release characteristics, including its bioavailability via the sublingual route. Methods The wafer formulation was prepared by freeze-drying an aqueous dispersion of fentanyl containing sodium carboxymethylcellulose and amylogum as matrix formers. Uniformity of weight, friability, and dissolution testing of the fentanyl wafer was achieved using standard methods, and the residual moisture content was measured. The fentanyl wafer was also examined using scanning electron microscopy and x-ray diffraction. The absolute bioavailability of the fentanyl wafer was evaluated in 11 opioid-naïve adult female patients using a randomized crossover design. Results In vitro release showed that almost 90% of the fentanyl dissolved in one minute. In vivo, the first detectable plasma fentanyl concentration was observed after 3.5 minutes and the peak plasma concentration between 61.5 and 67 minutes. The median absolute bioavailability was 53.0%. Conclusion These results indicate that this wafer has potential as an alternative sublingual fentanyl formulation. PMID:23596347

Robust wafer identification recognition based on asterisk-shape filter and high-low score comparison method.

PubMed

Hsu, Wei-Chih; Yu, Tsan-Ying; Chen, Kuan-Liang

2009-12-10

Wafer identifications (wafer ID) can be used to identify wafers from each other so that wafer processing can be traced easily. Wafer ID recognition is one of the problems of optical character recognition. The process to recognize wafer IDs is similar to that used in recognizing car license-plate characters. However, due to some unique characteristics, such as the irregular space between two characters and the unsuccessive strokes of wafer ID, it will not get a good result to recognize wafer ID by directly utilizing the approaches used in car license-plate character recognition. Wafer ID scratches are engraved by a laser scribe almost along the following four fixed directions: horizontal, vertical, plus 45 degrees , and minus 45 degrees orientations. The closer to the center line of a wafer ID scratch, the higher the gray level will be. These and other characteristics increase the difficulty to recognize the wafer ID. In this paper a wafer ID recognition scheme based on an asterisk-shape filter and a high-low score comparison method is proposed to cope with the serious influence of uneven luminance and make recognition more efficiently. Our proposed approach consists of some processing stages. Especially in the final recognition stage, a template-matching method combined with stroke analysis is used as a recognizing scheme. This is because wafer IDs are composed of Semiconductor Equipment and Materials International (SEMI) standard Arabic numbers and English alphabets, and thus the template ID images are easy to obtain. Furthermore, compared with the approach that requires prior training, such as a support vector machine, which often needs a large amount of training image samples, no prior training is required for our approach. The testing results show that our proposed scheme can efficiently and correctly segment out and recognize the wafer ID with high performance.

CXOGBS J173620.2-293338: A candidate symbiotic X-ray binary associated with a bulge carbon star

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hynes, Robert I.; Britt, C. T.; Johnson, C. B.

2014-01-01

The Galactic Bulge Survey (GBS) is a wide but shallow X-ray survey of regions above and below the Plane in the Galactic Bulge. It was performed using the Chandra X-ray Observatory's ACIS camera. The survey is primarily designed to find and classify low luminosity X-ray binaries. The combination of the X-ray depth of the survey and the accessibility of optical and infrared counterparts makes this survey ideally suited to identification of new symbiotic X-ray binaries (SyXBs) in the Bulge. We consider the specific case of the X-ray source CXOGBS J173620.2-293338. It is coincident to within 1 arcsec with a verymore » red star, showing a carbon star spectrum and irregular variability in the Optical Gravitational Lensing Experiment data. We classify the star as a late C-R type carbon star based on its spectral features, photometric properties, and variability characteristics, although a low-luminosity C-N type cannot be ruled out. The brightness of the star implies it is located in the Bulge, and its photometric properties are overall consistent with the Bulge carbon star population. Given the rarity of carbon stars in the Bulge, we estimate the probability of such a close chance alignment of any GBS source with a carbon star to be ≲ 10{sup –3}, suggesting that this is likely to be a real match. If the X-ray source is indeed associated with the carbon star, then the X-ray luminosity is around 9 × 10{sup 32} erg s{sup –1}. Its characteristics are consistent with a low luminosity SyXB, or possibly a low accretion rate white dwarf symbiotic.« less

Zinc abundances in Galactic bulge field red giants: Implications for damped Lyman-α systems

NASA Astrophysics Data System (ADS)

Barbuy, B.; Friaça, A. C. S.; da Silveira, C. R.; Hill, V.; Zoccali, M.; Minniti, D.; Renzini, A.; Ortolani, S.; Gómez, A.

2015-08-01

Context. Zinc in stars is an important reference element because it is a proxy to Fe in studies of damped Lyman-α systems (DLAs), permitting a comparison of chemical evolution histories of bulge stellar populations and DLAs. In terms of nucleosynthesis, it behaves as an alpha element because it is enhanced in metal-poor stars. Abundance studies in different stellar populations can give hints to the Zn production in different sites. Aims: The aim of this work is to derive the iron-peak element Zn abundances in 56 bulge giants from high resolution spectra. These results are compared with data from other bulge samples, as well as from disk and halo stars, and damped Lyman-α systems, in order to better understand the chemical evolution in these environments. Methods: High-resolution spectra were obtained using FLAMES+UVES on the Very Large Telescope. We computed the Zn abundances using the Zn i lines at 4810.53 and 6362.34 Å. We considered the strong depression in the continuum of the Zn i 6362.34 Å line, which is caused by the wings of the Ca i 6361.79 Å line suffering from autoionization. CN lines blending the Zn i 6362.34 Å line are also included in the calculations. Results: We find [Zn/Fe] = +0.24 ± 0.02 in the range -1.3 < [Fe/H] < -0.5 and [Zn/Fe] = + 0.06 ± 0.02 in the range -0.5 < [Fe/H] < -0.1, whereas for [Fe/H] ≥ -0.1, it shows a spread of -0.60 < [Zn/Fe] < + 0.15, with most of these stars having low [Zn/Fe] < 0.0. These low zinc abundances at the high metallicity end of the bulge define a decreasing trend in [Zn/Fe] with increasing metallicities. A comparison with Zn abundances in DLA systems is presented, where a dust-depletion correction was applied for both Zn and Fe. When we take these corrections into account, the [Zn/Fe] vs. [Fe/H] of the DLAs fall in the same region as the thick disk and bulge stars. Finally, we present a chemical evolution model of Zn enrichment in massive spheroids, representing a typical classical bulge evolution

METALLICITY DISTRIBUTION FUNCTIONS, RADIAL VELOCITIES, AND ALPHA ELEMENT ABUNDANCES IN THREE OFF-AXIS BULGE FIELDS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Christian I.; Rich, R. Michael; Kobayashi, Chiaki

2013-03-10

We present radial velocities and chemical abundance ratios of [Fe/H], [O/Fe], [Si/Fe], and [Ca/Fe] for 264 red giant branch stars in three Galactic bulge off-axis fields located near (l, b) = (-5.5, -7), (-4, -9), and (+8.5, +9). The results are based on equivalent width and spectrum synthesis analyses of moderate resolution (R Almost-Equal-To 18,000), high signal-to-noise ratio (S/N {approx} 75-300 pixel{sup -1}) spectra obtained with the Hydra spectrographs on the Blanco 4 m and WIYN 3.5 m telescopes. The targets were selected from the blue side of the giant branch to avoid cool stars that would be strongly affectedmore » by CN and TiO; however, a comparison of the color-metallicity distribution in literature samples suggests that our selection of bluer targets should not present a significant bias against metal-rich stars. We find a full range in metallicity that spans [Fe/H] Almost-Equal-To -1.5 to +0.5, and that, in accordance with the previously observed minor-axis vertical metallicity gradient, the median [Fe/H] also declines with increasing Galactic latitude in off-axis fields. The off-axis vertical [Fe/H] gradient in the southern bulge is estimated to be {approx}0.4 dex kpc{sup -1}; however, comparison with the minor-axis data suggests that a strong radial gradient does not exist. The (+8.5, +9) field exhibits a higher than expected metallicity, with a median [Fe/H] = -0.23, that might be related to a stronger presence of the X-shaped bulge structure along that line-of-sight. This could also be the cause of an anomalous increase in the median radial velocity for intermediate metallicity stars in the (+8.5, +9) field. However, the overall radial velocity and dispersion for each field are in good agreement with recent surveys and bulge models. All fields exhibit an identical, strong decrease in velocity dispersion with increasing metallicity that is consistent with observations in similar minor-axis outer bulge fields. Additionally, the [O/Fe], [Si

Kinematic Evaluation of Association between Disc Bulge Migration, Lumbar Segmental Mobility, and Disc Degeneration in the Lumbar Spine Using Positional Magnetic Resonance Imaging

PubMed Central

Hu, Jonathan K.; Morishita, Yuichiro; Montgomery, Scott R.; Hymanson, Henry; Taghavi, Cyrus E.; Do, Duc; Wang, Jeff C.

2011-01-01

Degenerative disc disease and disc bulge in the lumbar spine are common sources of lower back pain. Little is known regarding disc bulge migration and lumbar segmental mobility as the lumbar spine moves from flexion to extension. In this study, 329 symptomatic (low back pain with or without neurological symptoms) patients with an average age of 43.5 years with varying degrees of disc degeneration were examined to characterize the kinematics of the lumbar intervertebral discs through flexion, neutral, and extension weight-bearing positions. In this population, disc bulge migration associated with dynamic motion of the lumbar spine significantly increased with increased grade of disk degeneration. Although no obvious trends relating the migration of disc bulge and angular segmental mobility were seen, translational segmental mobility tended to increase with disc bulge migration in all of the degenerative disc states. It appears that many factors, both static (intervertebral disc degeneration or disc height) and dynamic (lumbar segmental mobility), affect the mechanisms of lumbar disc bulge migration. PMID:24353937

Development of a near-infrared high-resolution spectrograph (WINERED) for a survey of bulge stars

NASA Astrophysics Data System (ADS)

Tsujimoto, T.; Kobayashi, N.; Yasui, C.; Kondo, S.; Minami, A.; Motohara, K.; Ikeda, Y.; Gouda, N.

2008-07-01

We are developing a new near-infrared high-resolution (R[max] = 100,000) and high-sensitive spectrograph WINERED, which is specifically customized for short NIR bands at 0.9 1.35 μm. WINERED employs an innovative optical system; a portable design and a warm optics without any cold stops. The planned astrometric space mission JASMINE will provide precise positions, distances, and proper motions of the bulge stars. The missing components, the radial velocity and chemical composition will be measured by WINERED. These combined data brought by JASMINE and WINERED will certainly reveal the nature of the Galactic bulge. We plan to complete this instrument for observations of single objects by the end of 2008 and to attach it to various 4 10m telescopes as a PI-type instrument. We hope to upgrade WINERED with a multi-object feed in the future for efficient survey of the JASMINE bulge stars.

W-Band On-Wafer Measurement of Uniplanar Slot-Type Antennas

NASA Technical Reports Server (NTRS)

Raman, Sanjay; Gauthier, Gildas P.; Rebeiz, Gabriel M.

1997-01-01

Uniplanar slot-type antennas such as coplanar waveguide fed single- and dual-polarized slot-ring antennas and double folded-slot antennas are characterized using a millimeter-wave network analyzer and on-wafer measurement techniques. The antennas are designed to be mounted on a dielectric lens to minimize power loss into substrate modes and realize high-gain antenna patterns. On-wafer measurements are performed by placing the antenna wafer on a thick dielectric spacer of similar e(sub t) and eliminating the reflection from the probe station chuck with time-domain gating. The measured results agree well with method-of-moments simulations.

Investigation of radiation hardened SOI wafer fabricated by ion-cut technique

NASA Astrophysics Data System (ADS)

Chang, Yongwei; Wei, Xing; Zhu, Lei; Su, Xin; Gao, Nan; Dong, Yemin

2018-07-01

Total ionizing dose (TID) effect on Silicon-on-Insulator (SOI) wafers due to inherent buried oxide (BOX) is a significant concern as it leads to the degradation of electrical properties of SOI-based devices and circuits, even failures of the systems associated with them. This paper reports the radiation hardening implementation of SOI wafer fabricated by ion-cut technique integrated with low-energy Si+ implantation. The electrical properties and radiation response of pseudo-MOS transistors are analyzed. The results demonstrate that the hardening process can significantly improve the TID tolerance of SOI wafers by generating Si nanocrystals (Si-NCs) within the BOX. The presence of Si-NCs created through Si+ implantation is evidenced by high-resolution transmission electron microscopy (HR-TEM). Under the pass gate (PG) irradiation bias, the anti-radiation properties of H-gate SOI nMOSFETs suggest that the radiation hardened SOI wafers with optimized Si implantation dose can perform effectively in a radiation environment. The radiation hardening process provides an excellent way to reinforce the TID tolerance of SOI wafers.

New optoelectronic methodology for nondestructive evaluation of MEMS at the wafer level

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Ferguson, Curtis F.; Melson, Michael J.

2004-02-01

One of the approaches to fabrication of MEMS involves surface micromachining to define dies on single crystal silicon wafers, dicing of the wafers to separate the dies, and electronic packaging of the individual dies. Dicing and packaging of MEMS accounts for a large fraction of the fabrication costs, therefore, nondestructive evaluation at the wafer level, before dicing, can have significant implications on improving production yield and costs. In this paper, advances in development of optoelectronic holography (OEH) techniques for nondestructive, noninvasive, full-field of view evaluation of MEMS at the wafer level are described. With OEH techniques, quantitative measurements of shape and deformation of MEMS, as related to their performance and integrity, are obtained with sub-micrometer spatial resolution and nanometer measuring accuracy. To inspect an entire wafer with OEH methodologies, measurements of overlapping regions of interest (ROI) on a wafer are recorded and adjacent ROIs are stitched together through efficient 3D correlation analysis algorithms. Capabilities of the OEH techniques are illustrated with representative applications, including determination of optimal inspection conditions to minimize inspection time while achieving sufficient levels of accuracy and resolution.

REDDENING AND EXTINCTION TOWARD THE GALACTIC BULGE FROM OGLE-III: THE INNER MILKY WAY'S R{sub V} {approx} 2.5 EXTINCTION CURVE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nataf, David M.; Gould, Andrew; Johnson, Jennifer A.

We combine VI photometry from OGLE-III with VISTA Variables in The Via Lactea survey and Two Micron All Sky Survey measurements of E(J - K{sub s} ) to resolve the longstanding problem of the non-standard optical extinction toward the Galactic bulge. We show that the extinction is well fit by the relation A{sub I} = 0.7465 Multiplication-Sign E(V - I) + 1.3700 Multiplication-Sign E(J - K{sub s} ), or, equivalently, A{sub I} = 1.217 Multiplication-Sign E(V - I)(1 + 1.126 Multiplication-Sign (E(J - K{sub s} )/E(V - I) - 0.3433)). The optical and near-IR reddening law toward the inner Galaxymore » approximately follows an R{sub V} Almost-Equal-To 2.5 extinction curve with a dispersion {sigma}{sub R{sub V}}{approx}0.2, consistent with extragalactic investigations of the hosts of Type Ia SNe. Differential reddening is shown to be significant on scales as small as our mean field size of 6'. The intrinsic luminosity parameters of the Galactic bulge red clump (RC) are derived to be (M{sub I,RC},{sigma}{sub I,RC,0}, (V-I){sub RC,0},{sigma}{sub (V-I){sub R{sub C}}}, (J-K{sub s}){sub RC,0}) = (-0.12, 0.09, 1.06, 0.121, 0.66). Our measurements of the RC brightness, brightness dispersion, and number counts allow us to estimate several Galactic bulge structural parameters. We estimate a distance to the Galactic center of 8.20 kpc. We measure an upper bound on the tilt {alpha} Almost-Equal-To 40 Degree-Sign between the bulge's major axis and the Sun-Galactic center line of sight, though our brightness peaks are consistent with predictions of an N-body model oriented at {alpha} Almost-Equal-To 25 Degree-Sign . The number of RC stars suggests a total stellar mass for the Galactic bulge of {approx}2.3 Multiplication-Sign 10{sup 10} M{sub Sun} if one assumes a canonical Salpeter initial mass function (IMF), or {approx}1.6 Multiplication-Sign 10{sup 10} M{sub Sun} if one assumes a bottom-light Zoccali IMF.« less

Multi-wire slurry wafering demonstrations. [slicing silicon ingots for solar arrays

NASA Technical Reports Server (NTRS)

Chen, C. P.

1978-01-01

Ten slicing demonstrations on a multi-wire slurry saw, made to evaluate the silicon ingot wafering capabilities, reveal that the present sawing capabilities can provide usable wafer area from an ingot 1.05m/kg (e.g. kerf width 0.135 mm and wafer thickness 0.265 mm). Satisfactory surface qualities and excellent yield of silicon wafers were found. One drawback is that the add-on cost of producing water from this saw, as presently used, is considerably higher than other systems being developed for the low-cost silicon solar array project (LSSA), primarily because the saw uses a large quantity of wire. The add-on cost can be significantly reduced by extending the wire life and/or by rescue of properly plated wire to restore the diameter.

High frequency guided wave propagation in monocrystalline silicon wafers

NASA Astrophysics Data System (ADS)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2017-04-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

COSMIC-LAB: unveling the true nature of Terzan 5, a pristine fragment of the Galactic bulge

NASA Astrophysics Data System (ADS)

Ferraro, Francesco

2012-10-01

We have discovered that Terzan5, a stellar system in the Galactic bulge, harbors two stellar populations with different iron content {Delta[Fe/H] 0.5 dex} and possibly different ages {Ferraro et al. 2009, Nature 462, 483}. Moreover, the observed chemical patterns {Origlia et al. 2011, ApJ 726, L20} significantly differ from those observed in any known genuine GC. These evidences demonstrate that, similarly to omega Centauri in the halo, Terzan5 is NOT a genuine globular cluster {GC}, but a stellar system that was able to retain the gas ejected by violent supernova {SN} explosions.Indeed the striking chemical similarity with the bulge stars suggests that Terzan5 and the Galactic bulge shared the same star formation and chemical enrichment processes, driven by an exceptional amount of SNeII explosions {this is also the key to understand the origin of the extraordinary population of millisecond pulsars in Terzan5}. A quite intriguing scenario is emerging from these observations: Terzan5 could be the relic of one of the massive clumps that contributed {through strong dynamical interactions with other pre-formed and internally-evolved sub-structures} to the formation of the Galactic bulge.Here we propose to use the WFC3 to accurately measure the age of the two populations directly from the main sequence turn-off luminosities. Precisely dating the first and second burst of star formation is a crucial step for the correct reconstruction of the evolutionary history of Terzan5, with a significant impact on our comprehension of the formation processes of the Milky Way bulge and, more in general, of galactic spheroids.

DefenseLink.mil - Special Report: Battle of the Bulge

Science.gov Websites

World War II in a final desperate attempt to break and defeat Allied forces. The ensuing battle, fought the largest land battle involving American Forces in World War II. More than a million Allied troops lines of the Battle of the Bulge during World War II. The now 86-year-old returned to one of his former

Tidal stripping stellar substructures around four metal-poor globular clusters in the galactic bulge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chun, Sang-Hyun; Kang, Minhee; Jung, DooSeok

2015-01-01

We investigate the spatial density configuration of stars around four metal-poor globular clusters (NGC 6266, NGC 6626, NGC 6642, and NGC 6723) in the Galactic bulge region using wide-field deep J, H, and K imaging data obtained with the Wide Field Camera near-infrared array on the United Kingdom Infrared Telescope. A statistical weighted filtering algorithm for the stars on the color–magnitude diagram is applied in order to sort cluster member candidates from the field star contamination. In two-dimensional isodensity contour maps of the clusters, we find that all four of the globular clusters exhibit strong evidence of tidally stripped stellarmore » features beyond the tidal radius in the form of tidal tails or small density lobes/chunks. The orientations of the extended stellar substructures are likely to be associated with the effect of dynamic interaction with the Galaxy and the cluster's space motion. The observed radial density profiles of the four globular clusters also describe the extended substructures; they depart from theoretical King and Wilson models and have an overdensity feature with a break in the slope of the profile at the outer region of clusters. The observed results could imply that four globular clusters in the Galactic bulge region have experienced strong environmental effects such as tidal forces or bulge/disk shocks of the Galaxy during the dynamical evolution of globular clusters. These observational results provide further details which add to our understanding of the evolution of clusters in the Galactic bulge region as well as the formation of the Galaxy.« less

MASSIVE GALAXIES IN COSMOS: EVOLUTION OF BLACK HOLE VERSUS BULGE MASS BUT NOT VERSUS TOTAL STELLAR MASS OVER THE LAST 9 Gyr?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jahnke, Knud; Cisternas, Mauricio; Inskip, Katherine

2009-12-01

We constrain the ratio of black hole (BH) mass to total stellar mass of type-1 active galactic nuclei (AGNs) in the COSMOS survey at 1 < z < 2. For 10 AGNs at mean redshift z approx 1.4 with both Hubble Space Telescope (HST)/ACS and HST/NICMOS imaging data, we are able to compute the total stellar mass M {sub *,total}, based on rest-frame UV-to-optical host galaxy colors which constrain mass-to-light ratios. All objects have virial M {sub BH} estimates available from the COSMOS Magellan/IMACS and zCOSMOS surveys. We find within errors zero difference between the M {sub BH}-M {sub *,total}more » relation at z approx 1.4 and the M {sub BH}-M {sub *,bulge} relation in the local universe. Our interpretation is (1) if our objects were purely bulge-dominated, the M {sub BH}-M {sub *,bulge} relation has not evolved since z approx 1.4. However, (2) since we have evidence for substantial disk components, the bulges of massive galaxies (M {sub *,total} = 11.1 +- 0.3 or log M {sub BH} approx 8.3 +- 0.2) must have grown over the last 9 Gyr predominantly by redistribution of the disk into the bulge mass. Since all necessary stellar mass exists in galaxies at z = 1.4, no star formation or addition of external stellar material is required, but only a redistribution, e.g., induced by minor and major merging or through disk instabilities. Merging, in addition to redistributing mass in the galaxy, will add both BH and stellar/bulge mass, but does not change the overall final M {sub BH}/M {sub *,bulge} ratio. Since the overall cosmic stellar and BH mass buildup trace each other tightly over time, our scenario of bulge formation in massive galaxies is independent of any strong BH feedback and means that the mechanism coupling BH and bulge mass until the present is very indirect.« less

Non-contact defect diagnostics in Cz-Si wafers using resonance ultrasonic vibrations

NASA Astrophysics Data System (ADS)

Belyaev, A.; Kochelap, V. A.; Tarasov, I.; Ostapenko, S.

2001-01-01

A new resonance effect of generation of sub-harmonic acoustic vibrations was applied to characterize defects in as-grown and processed Cz-Si wafers. Ultrasonic vibrations were generated into standard 8″ wafers using an external ultrasonic transducer and their amplitude recorded in a non-contact mode using a scanning acoustic probe. By tuning the frequency, f, of the transducer we observed generation of intense sub-harmonic acoustic mode ("whistle" or w-mode) with f/2 frequency. The characteristics of the w-mode-amplitude dependence, frequency scans, spatial distribution allow a clear distinction versus harmonic vibrations of the same wafer. The origin of sub-harmonic vibrations observed on 8″ Cz-Si wafers is attributed to a parametric resonance of flexural vibrations in thin silicon circular plates. We present evidence that "whistle" effect shows a strong dependence on the wafer's growth and processing history and can be used for quality assurance purposes.

Galactic Bulge Giants: Probing Stellar and Galactic Evolution. 1. Catalogue of Spitzer IRAC and MIPS Sources (PREPRINT)

NASA Technical Reports Server (NTRS)

Uttenthaler, Stefan; Stute, Matthias; Sahai, Raghvendra; Blommaert, Joris A.; Schultheis, Mathias; Kraemer, Kathleen E.; Groenewegen, Martin A.; Price, Stephan D.

2010-01-01

Aims. We aim at measuring mass-loss rates and the luminosities of a statistically large sample of Galactic bulge stars at several galactocentric radii. The sensitivity of previous infrared surveys of the bulge has been rather limited, thus fundamental questions for late stellar evolution, such as the stage at which substantial mass-loss begins on the red giant branch and its dependence on fundamental stellar properties, remain unanswered. We aim at providing evidence and answers to these questions. Methods. To this end, we observed seven 15 15 arcmin2 fields in the nuclear bulge and its vicinity with unprecedented sensitivity using the IRAC and MIPS imaging instruments on-board the Spitzer Space Telescope. In each of the fields, tens of thousands of point sources were detected. Results. In the first paper based on this data set, we present the observations, data reduction, the final catalogue of sources, and a detailed comparison to previous mid-IR surveys of the Galactic bulge, as well as to theoretical isochrones. We find in general good agreement with other surveys and the isochrones, supporting the high quality of our catalogue.

A front-end wafer-level microsystem packaging technique with micro-cap array

NASA Astrophysics Data System (ADS)

Chiang, Yuh-Min

2002-09-01

The back-end packaging process is the remaining challenge for the micromachining industry to commercialize microsystem technology (MST) devices at low cost. This dissertation presents a novel wafer level protection technique as a final step of the front-end fabrication process for MSTs. It facilitates improved manufacturing throughput and automation in package assembly, wafer level testing of devices, and enhanced device performance. The method involves the use of a wafer-sized micro-cap array, which consists of an assortment of small caps micro-molded onto a material with adjustable shapes and sizes to serve as protective structures against the hostile environments during packaging. The micro-cap array is first constructed by a micromachining process with micro-molding technique, then sealed to the device wafer at wafer level. Epoxy-based wafer-level micro cap array has been successfully fabricated and showed good compatibility with conventional back-end packaging processes. An adhesive transfer technique was demonstrated to seal the micro cap array with a MEMS device wafer. No damage or gross leak was observed while wafer dicing or later during a gross leak test. Applications of the micro cap array are demonstrated on MEMS, microactuators fabricated using CRONOS MUMPS process. Depending on the application needs, the micro-molded cap can be designed and modified to facilitate additional component functions, such as optical, electrical, mechanical, and chemical functions, which are not easily achieved in the device by traditional means. Successful fabrication of a micro cap array comprised with microlenses can provide active functions as well as passive protection. An optical tweezer array could be one possibility for applications of a micro cap with microlenses. The micro cap itself could serve as micro well for DNA or bacteria amplification as well.

Laser-bulge based ultrasonic bonding method for fabricating multilayer thermoplastic microfluidic devices

NASA Astrophysics Data System (ADS)

Liang, Chao; Liu, Chong; Liu, Ziyang; Meng, Fanjian; Li, Jingmin

2017-11-01

Ultrasonic bonding is a commonly-used method for fabrication of thermoplastic microfluidic devices. However, due to the existence of the energy director (a convex structure to concentrate the ultrasonic energy), it is difficult to control its molten polymer flow, which may result in a small gap between the bonding interface or microchannel clogging. In this paper, we present an approach to address these issues. Firstly, the microchannels were patterned onto the PMMA sheets using hot embossing with the wire electrical discharge machined molds. Then, a small bulge, which was formed at the edge of the laser-ablated groove (LG), was generated around the microchannel using a CO2 laser ablation system. By using the bulge to concentrate the ultrasonic energy, there was no need for fabricating the complicated and customized energy director. When the bulge was melted, it was able to flow into the LG which overcame the ‘gap’ and ‘clogging’ problems. Here, two types of two-layer microfluidic devices and a five-layer micromixer were fabricated to validate its performance. Our results showed that these thermoplastic microdevices can be successfully bonded by using this method. The liquid leakage was not observed in both the capillary-driven flowing test and the pressure-driven mixing experiments. It is a potential method for bonding the thermoplastic microfluidic devices.

Wafer-level colinearity monitoring for TFH applications

NASA Astrophysics Data System (ADS)

Moore, Patrick; Newman, Gary; Abreau, Kelly J.

2000-06-01

Advances in thin film head (TFH) designs continue to outpace those in the IC industry. The transition to giant magneto resistive (GMR) designs is underway along with the push toward areal densities in the 20 Gbit/inch2 regime and beyond. This comes at a time when the popularity of the low-cost personal computer (PC) is extremely high, and PC prices are continuing to fall. Consequently, TFH manufacturers are forced to deal with pricing pressure in addition to technological demands. New methods of monitoring and improving yield are required along with advanced head designs. TFH manufacturing is a two-step process. The first is a wafer-level process consisting of manufacturing devices on substrates using processes similar to those in the IC industry. The second half is a slider-level process where wafers are diced into 'rowbars' containing many heads. Each rowbar is then lapped to obtain the desired performance from each head. Variation in the placement of specific layers of each device on the bar, known as a colinearity error, causes a change in device performance and directly impacts yield. The photolithography tool and process contribute to colinearity errors. These components include stepper lens distortion errors, stepper stage errors, reticle fabrication errors, and CD uniformity errors. Currently, colinearity is only very roughly estimated during wafer-level TFH production. An absolute metrology tool, such as a Nikon XY, could be used to quantify colinearity with improved accuracy, but this technique is impractical since TFH manufacturers typically do not have this type of equipment at the production site. More importantly, this measurement technique does not provide the rapid feedback needed in a high-volume production facility. Consequently, the wafer-fab must rely on resistivity-based measurements from slider-fab to quantify colinearity errors. The feedback of this data may require several weeks, making it useless as a process diagnostic. This study examines

Lamb wave propagation in monocrystalline silicon wafers.

PubMed

Fromme, Paul; Pizzolato, Marco; Robyr, Jean-Luc; Masserey, Bernard

2018-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness and beam skewing of the two fundamental Lamb wave modes A 0 and S 0 were investigated. Experimental measurements using contact wedge transducer excitation and laser measurement were conducted. Good agreement was found between the theoretically calculated angular dependency of the phase slowness and measurements for different propagation directions relative to the crystal orientation. Significant wave skew and beam widening was observed experimentally due to the anisotropy, especially for the S 0 mode. Explicit finite element simulations were conducted to visualize and quantify the guided wave beam skew. Good agreement was found for the A 0 mode, but a systematic discrepancy was observed for the S 0 mode. These effects need to be considered for the non-destructive testing of wafers using guided waves.

The diffuse molecular component in the nuclear bulge of the Milky Way

NASA Astrophysics Data System (ADS)

Riquelme, D.; Bronfman, L.; Mauersberger, R.; Finger, R.; Henkel, C.; Wilson, T. L.; Cortés-Zuleta, P.

2018-02-01

Context. The bulk of the molecular gas in the central molecular zone (CMZ) of the Galactic center region shows warm kinetic temperatures, ranging from >20 K in the coldest and densest regions (n 104-5 cm-3) up to more than 100 K for densities of about n 103 cm-3. Recently, a more diffuse, hotter (n 100 cm-3, T 250 K) gas component was discovered through absorption observations of H3+. This component may be widespread in the Galactic center, and low density gas detectable in absorption may be present even outside the CMZ along sightlines crossing the extended bulge of the Galaxy. Aim. We aim to observe and characterize diffuse and low density gas using observations of 3-mm molecular transitions seen in absorption. Methods: Using the Atacama Large (sub)Millimeter Array (ALMA) we observed the absorption against the quasar J1744-312, which is located toward the Galactic bulge region at (l, b) = (-2̊.13, -1̊.0), but outside the main molecular complexes. Results: ALMA observations in absorption against the J1744-312 quasar reveal a rich and complex chemistry in low density molecular and presumably diffuse clouds. We detected three velocity components at 0, -153, and -192 km s-1. The component at 0 km s-1 could represent gas in the Galactic disk while the velocity components at -153, and -192 km s-1 likely originate from the Galactic bulge. We detected 12 molecules in the survey, but only 7 in the Galactic bulge gas. This paper makes use of the following ALMA data: ADS/JAO.ALMA#2012.1.00119.S. ALMA is a partnership of ESO (representing its member states), NSF (USA) and NINS (Japan), together with NRC (Canada), NSC and ASIAA (Taiwan), and KASI (Republic of Korea), in cooperation with the Republic of Chile. The Joint ALMA Observatory is operated by ESO, AUI/NRAO, and NAOJ.

Characterization of Friction Stir Welded Tubes by Means of Tube Bulge Test

NASA Astrophysics Data System (ADS)

D'Urso, G.; Longo, M.; Giardini, C.

2011-05-01

Mechanical properties of friction stir welded joints are generally evaluated by means of conventional tensile test. This testing method might provide insufficient information because maximum strain obtained in tensile test before necking is small; moreover, the application of tensile test is limited when the joint path is not linear or even when the welds are executed on curved surfaces. Therefore, in some cases, it would be preferable to obtain the joints properties from other testing methods. Tube bulge test can be a valid solution for testing circumferential or longitudinal welds executed on tubular workpieces. The present work investigates the mechanical properties and the formability of friction stir welded tubes by means of tube bulge tests. The experimental campaign was performed on tubular specimens having a thickness of 3 mm and an external diameter of 40 mm, obtained starting from two semi-tubes longitudinally friction stir welded. The first step, regarding the fabrication of tubes, was performed combining a conventional forming process and friction stir welding. Sheets in Al-Mg-Si-Cu alloy AA6060 T6 were adopted for this purpose. Plates having a dimension of 225×60 mm were bent (with a bending axis parallel to the main dimension) in order to obtain semi-tubes. A particular care was devoted to the fabrication of forming devices (punch and die) in order to minimize the springback effects. Semi-tubes were then friction stir welded by means of a CNC machine tool. Some preliminary tests were carried out by varying the welding parameters, namely feed rate and rotational speed. A very simple tool having flat shoulder and cylindrical pin was used. The second step of the research was based on testing the welded tubes by means of tube bulge test. A specific equipment having axial actuators with a conical shape was adopted for this study. Some analyses were carried out on the tubes bulged up to a certain pressure level. In particular, the burst pressure and the

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Quasiperiodic oscillations in bright galactic-bulge X-ray sources

NASA Technical Reports Server (NTRS)

Lamb, F. K.; Shibazaki, N.; Alpar, M. A.; Shaham, J.

1985-01-01

Quasiperiodic oscillations with frequencies in the range 5-50 Hz have recently been discovered in X-rays from two bright galactic-bulge sources and Sco X-1. These sources are weakly magnetic neutron stars accreting from disks which the plasma is clumped. The interaction of the magnetosphere with clumps in the inner disk causes oscillations in the X-ray flux with many of the properties observed.

Method and Apparatus for Obtaining a Precision Thickness in Semiconductor and Other Wafers

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2002-01-01

A method and apparatus for processing a wafer comprising a material selected from an electrical semiconducting material and an electrical insulating material is presented. The wafer has opposed generally planar front and rear sides and a peripheral edge, wherein said wafer is pressed against a pad in the presence of a slurry to reduce its thickness. The thickness of the wafer is controlled by first forming a recess such as a dimple on the rear side of the wafer. A first electrical conducting strip extends from a first electrical connection means to the base surface of the recess to the second electrical connector. The first electrical conducting strip overlies the base surface of the recess. There is also a second electrical conductor with an electrical potential source between the first electrical connector and the second electrical connector to form. In combination with the first electrical conducting strip, the second electrical conductor forms a closed electrical circuit, and an electrical current flows through the closed electrical circuit. From the front side of the wafer the initial thickness of the wafer is reduced by lapping until the base surface of the recess is reached. The conductive strip is at least partially removed from the base surface to automatically stop the lapping procedure and thereby achieve the desired thickness.

Microwave Induced Direct Bonding of Single Crystal Silicon Wafers

NASA Technical Reports Server (NTRS)

Budraa, N. K.; Jackson, H. W.; Barmatz, M.

1999-01-01

We have heated polished doped single-crystal silicon wafers in a single mode microwave cavity to temperatures where surface to surface bonding occurred. The absorption of microwaves and heating of the wafers is attributed to the inclusion of n-type or p-type impurities into these substrates. A cylindrical cavity TM (sub 010) standing wave mode was used to irradiate samples of various geometry's at positions of high magnetic field. This process was conducted in vacuum to exclude plasma effects. This initial study suggests that the inclusion of impurities in single crystal silicon significantly improved its microwave absorption (loss factor) to a point where heating silicon wafers directly can be accomplished in minimal time. Bonding of these substrates, however, occurs only at points of intimate surface to surface contact. The inclusion of a thin metallic layer on the surfaces enhances the bonding process.

Observational constraints to boxy/peanut bulge formation time

NASA Astrophysics Data System (ADS)

Pérez, I.; Martínez-Valpuesta, I.; Ruiz-Lara, T.; de Lorenzo-Caceres, A.; Falcón-Barroso, J.; Florido, E.; González Delgado, R. M.; Lyubenova, M.; Marino, R. A.; Sánchez, S. F.; Sánchez-Blázquez, P.; van de Ven, G.; Zurita, A.

2017-09-01

Boxy/peanut bulges are considered to be part of the same stellar structure as bars and both could be linked through the buckling instability. The Milky Way is our closest example. The goal of this Letter is to determine if the mass assembly of the different components leaves an imprint in their stellar populations allowing the estimation the time of bar formation and its evolution. To this aim, we use integral field spectroscopy to derive the stellar age distributions, SADs, along the bar and disc of NGC 6032. The analysis clearly shows different SADs for the different bar areas. There is an underlying old (≥12 Gyr) stellar population for the whole galaxy. The bulge shows star formation happening at all times. The inner bar structure shows stars of ages older than 6 Gyr with a deficit of younger populations. The outer bar region presents an SAD similar to that of the disc. To interpret our results, we use a generic numerical simulation of a barred galaxy. Thus, we constrain, for the first time, the epoch of bar formation, the buckling instability period and the posterior growth from disc material. We establish that the bar of NGC 6032 is old, formed around 10 Gyr ago while the buckling phase possibly happened around 8 Gyr ago. All these results point towards bars being long-lasting even in the presence of gas.

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

NASA Technical Reports Server (NTRS)

Jones, G. T.; Chitre, S.; Rhee, S. S.; Allison, K. L.

1979-01-01

A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.

SFR bulge-to-disk ratios from the CALIFA IFS nearby galaxies survey

NASA Astrophysics Data System (ADS)

Catalán-Torrecilla, Cristina; Gil de Paz, Armando; Castillo-Morales, Africa; Iglesias Páramo, Jorge; Sanchez, Sebastian

2015-08-01

Our ultimate aim is to study the evolution of the Star Formation Rate (SFR) by components (nuclei, bulges, disks) as a key constraint for the models of galaxy formation and evolution. In order to provide a local benchmark, we start from the analysis of a sample of nearby galaxies from the CALIFA Integral Field Spectroscopy (IFS) survey. Prior to this study, we have verified that the extinction-corrected Halpha luminosity provided by CALIFA IFS data recovers the total SFR by means of comparing measurements from this estimator with single-band (22μm, TIR and FUV) and hybrid tracers (FUV+22μm, FUV+TIR, Halpha+22μm, Halpha+TIR) for our sample of 272 CALIFA galaxies (Catalán-Torrecilla et al. 2015). We focus here on the study of the SFR bulge-to-disk ratio in nearby galaxies, something achievable in large numbers thanks to the good spatial resolution of our optical stellar-absorption and extinction corrected IFS-based Halpha maps. The results of the photometric decomposition of SDSS images of our sample is used as a prior is this analysis. The CALIFA objects analyzed range from galaxies that have all the SFR concentrated in the nuclear part to cases in which the SFR is spread over the disk and include both barred and unbarred galaxies. In summary, we are able to explore the distribution of the SFR in scales of 0.3-1.6 kpc for a rather large and well-characterized galaxy sample in the Local Universe.This and similar studies at higher redshifts will be key to understand how and at what rate galaxies assemble their stellar masses, either through mergers and/or secular processes.

Tidal radii and destruction rates of globular clusters in the Milky Way due to bulge-bar and disk shocking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Edmundo; Pichardo, Bárbara; Velázquez, Héctor

2014-10-01

We calculate orbits, tidal radii, and bulge-bar and disk shocking destruction rates for 63 globular clusters in our Galaxy. Orbits are integrated in both an axisymmetric and a nonaxisymmetric Galactic potential that includes a bar and a three-dimensional model for the spiral arms. With the use of a Monte Carlo scheme, we consider in our simulations observational uncertainties in the kinematical data of the clusters. In the analysis of destruction rates due to the bulge-bar, we consider the rigorous treatment of using the real Galactic cluster orbit instead of the usual linear trajectory employed in previous studies. We compare resultsmore » in both treatments. We find that the theoretical tidal radius computed in the nonaxisymmetric Galactic potential compares better with the observed tidal radius than that obtained in the axisymmetric potential. In both Galactic potentials, bulge-shocking destruction rates computed with a linear trajectory of a cluster at its perigalacticons give a good approximation of the result obtained with the real trajectory of the cluster. Bulge-shocking destruction rates for clusters with perigalacticons in the inner Galactic region are smaller in the nonaxisymmetric potential than those in the axisymmetric potential. For the majority of clusters with high orbital eccentricities (e > 0.5), their total bulge+disk destruction rates are smaller in the nonaxisymmetric potential.« less

Warpage Measurement of Thin Wafers by Reflectometry

NASA Astrophysics Data System (ADS)

Ng, Chi Seng; Asundi, Anand Krishna

To cope with advances in the electronic and portable devices, electronic packaging industries have employed thinner and larger wafers to produce thinner packages/ electronic devices. As the thickness of the wafer decrease (below 250um), there is an increased tendency for it to warp. Large stresses are induced during manufacturing processes, particularly during backside metal deposition. The wafers bend due to these stresses. Warpage results from the residual stress will affect subsequent manufacturing processes. For example, warpage due to this residual stresses lead to crack dies during singulation process which will severely reorient the residual stress distributions, thus, weakening the mechanical and electrical properties of the singulated die. It is impossible to completely prevent the residual stress induced on thin wafers during the manufacturing processes. Monitoring of curvature/flatness is thus necessary to ensure reliability of device and its uses. A simple whole-field curvature measurement system using a novel computer aided phase shift reflection grating method has been developed and this project aims to take it to the next step for residual stress and full field surface shape measurement. The system was developed from our earlier works on Computer Aided Moiré Methods and Novel Techniques in Reflection Moiré, Experimental Mechanics (1994) in which novel structured light approach was shown for surface slope and curvature measurement. This method uses similar technology but coupled with a novel phase shift system to accurately measure slope and curvature. In this study, slope of the surface were obtain using the versatility of computer aided reflection grating method to manipulate and generate gratings in two orthogonal directions. The curvature and stress can be evaluated by performing a single order differentiation on slope data.

Engineering Controlled Spalling in (100)-Oriented GaAs for Wafer Reuse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweet, Cassi A.; McNeely, Joshua E.; Gorman, Brian

Controlled spalling offers a way to cleave thin, single-crystal films or devices from wafers, particularly if the fracture planes in the material are oriented parallel to the wafer surface. Unfortunately, misalignment between the favored fracture planes and the wafer surface preferred for photovoltaic growth in (100)-oriented GaAs produces a highly faceted surface when subject to controlled spalling. This highly faceted cleavage surface is problematic in several ways: (1) it can result in large variations of spall depth due to unstable crack propagation; (2) it may introduce defects into the device zone or underlying substrate; and (3) it consumes many micronsmore » of material outside of the device zone. We present the ways in which we have engineered controlled spalling for (100)-oriented GaAs to minimize these effects. We expand the operational window for controlled spalling to avoid spontaneous spalling, find no evidence of dislocation activity in the spalled film or the parent wafer, and reduce facet height and facet height irregularity. Resolving these issues provides a viable path forward for reducing III-V device cost through the controlled spalling of (100)-oriented GaAs devices and subsequent wafer reuse when these processes are combined with a high-throughput growth method such as Hydride Vapor Phase Epitaxy.« less

Stellar populations, stellar masses and the formation of galaxy bulges and discs at z < 3 in CANDELS

NASA Astrophysics Data System (ADS)

Margalef-Bentabol, Berta; Conselice, Christopher J.; Mortlock, Alice; Hartley, Will; Duncan, Kenneth; Kennedy, Rebecca; Kocevski, Dale D.; Hasinger, Guenther

2018-02-01

We present a multicomponent structural analysis of the internal structure of 1074 high-redshift massive galaxies at 1 < z < 3 from the CANDELS HST Survey. In particular, we examine galaxies best fitted by two structural components, and thus likely forming discs and bulges. We examine the stellar mass, star formation rates (SFRs) and colours of both the inner 'bulge' and outer 'disc' components for these systems using Spectral Energy Distribution (SED) information from the resolved ACS+WFC3 HST imaging. We find that the majority of both inner and outer components lie in the star-forming region of UVJ space (68 and 90 per cent, respectively). However, the inner portions, or the likely forming bulges, are dominated by dusty star formation. Furthermore, we show that the outer components of these systems have a higher SFR than their inner regions, and the ratio of SFR between 'disc' and 'bulge' increases at lower redshifts. Despite the higher SFR of the outer component, the stellar mass ratio of inner to outer component remains constant through this epoch. This suggests that there is mass transfer from the outer to inner components for typical two-component-forming systems, thus building bulges from discs. Finally, using Chandra data we find that the presence of an active galactic nucleus is more common in both one-component spheroid-like galaxies and two-component systems (13 ± 3 and 11 ± 2 per cent) than in one-component disc-like galaxies (3 ± 1 per cent), demonstrating that the formation of a central inner component likely triggers the formation of central massive black holes in these galaxies.

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Enhanced capture rate for haze defects in production wafer inspection

NASA Astrophysics Data System (ADS)

Auerbach, Ditza; Shulman, Adi; Rozentsvige, Moshe

2010-03-01

Photomask degradation via haze defect formation is an increasing troublesome yield problem in the semiconductor fab. Wafer inspection is often utilized to detect haze defects due to the fact that it can be a bi-product of process control wafer inspection; furthermore, the detection of the haze on the wafer is effectively enhanced due to the multitude of distinct fields being scanned. In this paper, we demonstrate a novel application for enhancing the wafer inspection tool's sensitivity to haze defects even further. In particular, we present results of bright field wafer inspection using the on several photo layers suffering from haze defects. One way in which the enhanced sensitivity can be achieved in inspection tools is by using a double scan of the wafer: one regular scan with the normal recipe and another high sensitivity scan from which only the repeater defects are extracted (the non-repeater defects consist largely of noise which is difficult to filter). Our solution essentially combines the double scan into a single high sensitivity scan whose processing is carried out along two parallel routes (see Fig. 1). Along one route, potential defects follow the standard recipe thresholds to produce a defect map at the nominal sensitivity. Along the alternate route, potential defects are used to extract only field repeater defects which are identified using an optimal repeater algorithm that eliminates "false repeaters". At the end of the scan, the two defect maps are merged into one with optical scan images available for all the merged defects. It is important to note, that there is no throughput hit; in addition, the repeater sensitivity is increased relative to a double scan, due to a novel runtime algorithm implementation whose memory requirements are minimized, thus enabling to search a much larger number of potential defects for repeaters. We evaluated the new application on photo wafers which consisted of both random and haze defects. The evaluation procedure

The population of single and binary white dwarfs of the Galactic bulge

NASA Astrophysics Data System (ADS)

Torres, S.; García-Berro, E.; Cojocaru, R.; Calamida, A.

2018-05-01

Recent Hubble Space Telescope observations have unveiled the white dwarf cooling sequence of the Galactic bulge. Although the degenerate sequence can be well fitted employing the most up-to-date theoretical cooling sequences, observations show a systematic excess of red objects that cannot be explained by the theoretical models of single carbon-oxygen white dwarfs of the appropriate masses. Here, we present a population synthesis study of the white dwarf cooling sequence of the Galactic bulge that takes into account the populations of both single white dwarfs and binary systems containing at least one white dwarf. These calculations incorporate state-of-the-art cooling sequences for white dwarfs with hydrogen-rich and hydrogen-deficient atmospheres, for both white dwarfs with carbon-oxygen and helium cores, and also take into account detailed prescriptions of the evolutionary history of binary systems. Our Monte Carlo simulator also incorporates all the known observational biases. This allows us to model with a high degree of realism the white dwarf population of the Galactic bulge. We find that the observed excess of red stars can be partially attributed to white dwarf plus main sequence binaries, and to cataclysmic variables or dwarf novae. Our best fit is obtained with a higher binary fraction and an initial mass function slope steeper than standard values, as well as with the inclusion of differential reddening and blending. Our results also show that the possible contribution of double degenerate systems or young and thick-discbulge stars is negligible.

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

NASA Astrophysics Data System (ADS)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

Big data driven cycle time parallel prediction for production planning in wafer manufacturing

NASA Astrophysics Data System (ADS)

Wang, Junliang; Yang, Jungang; Zhang, Jie; Wang, Xiaoxi; Zhang, Wenjun Chris

2018-07-01

Cycle time forecasting (CTF) is one of the most crucial issues for production planning to keep high delivery reliability in semiconductor wafer fabrication systems (SWFS). This paper proposes a novel data-intensive cycle time (CT) prediction system with parallel computing to rapidly forecast the CT of wafer lots with large datasets. First, a density peak based radial basis function network (DP-RBFN) is designed to forecast the CT with the diverse and agglomerative CT data. Second, the network learning method based on a clustering technique is proposed to determine the density peak. Third, a parallel computing approach for network training is proposed in order to speed up the training process with large scaled CT data. Finally, an experiment with respect to SWFS is presented, which demonstrates that the proposed CTF system can not only speed up the training process of the model but also outperform the radial basis function network, the back-propagation-network and multivariate regression methodology based CTF methods in terms of the mean absolute deviation and standard deviation.

Galactic Angular Momentum in Cosmological Zoom-in Simulations. I. Disk and Bulge Components and the Galaxy-Halo Connection

NASA Astrophysics Data System (ADS)

Sokołowska, Aleksandra; Capelo, Pedro R.; Fall, S. Michael; Mayer, Lucio; Shen, Sijing; Bonoli, Silvia

2017-02-01

We investigate the angular momentum evolution of four disk galaxies residing in Milky-Way-sized halos formed in cosmological zoom-in simulations with various sub-grid physics and merging histories. We decompose these galaxies, kinematically and photometrically, into their disk and bulge components. The simulated galaxies and their components lie on the observed sequences in the j *-M * diagram, relating the specific angular momentum and mass of the stellar component. We find that galaxies in low-density environments follow the relation {j}* \\propto {M}* α past major mergers, with α ˜ 0.6 in the case of strong feedback, when bulge-to-disk ratios are relatively constant, and α ˜ 1.4 in the other cases, when secular processes operate on shorter timescales. We compute the retention factors (I.e., the ratio of the specific angular momenta of stars and dark matter) for both disks and bulges and show that they vary relatively slowly after averaging over numerous but brief fluctuations. For disks, the retention factors are usually close to unity, while for bulges, they are a few times smaller. Our simulations therefore indicate that galaxies and their halos grow in a quasi-homologous way.

Silicon wafer temperature monitoring using all-fiber laser ultrasonics

NASA Astrophysics Data System (ADS)

Alcoz, Jorge J.; Duffer, Charles E.

1998-03-01

Laser-ultrasonics is a very attractive technique for in-line process control in the semiconductor industry as it is compatible with the clean room environment and offers the capability to inspect parts at high-temperature. We describe measurements of the velocity of laser-generated Lamb waves in silicon wafers as a function of temperature using fiber- optic laser delivery and all-fiber interferometric sensing. Fundamental anti-symmetric Lamb-wave modes were generated in 5 inches < 111 > silicon wafers using a Nd:YAG laser coupled to a large-core multimode fiber. Generation was also performed using an array of sources created with a diffraction grating. For detection a compact fiber-optic sensor was used which is well suited for industrial environments as it is compact, rugged, stable, and low-cost. The wafers were heated up to 1000 degrees C and the temperature correlated with ultrasonic velocity measurements.

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

NASA Astrophysics Data System (ADS)

Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.

2018-05-01

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.

Intentional defect array wafers: their practical use in semiconductor control and monitoring systems

NASA Astrophysics Data System (ADS)

Emami, Iraj; McIntyre, Michael; Retersdorf, Michael

2003-07-01

In the competitive world of semiconductor manufacturing today, control of the process and manufacturing equipment is paramount to success of the business. Consistent with the need for rapid development of process technology, is a need for development wiht respect to equipment control including defect metrology tools. Historical control methods for defect metrology tools included a raw count of defects detected on a characterized production or test wafer with little or not regard to the attributes of the detected defects. Over time, these characterized wafers degrade with multiple passes on the tools and handling requiring the tool owner to create and characterize new samples periodically. With the complex engineering software analysis systems used today, there is a strong reliance on the accuracy of defect size, location, and classification in order to provide the best value when correlating the in line to sort type of data. Intentional Defect Array (IDA) wafers were designed and manufacturered at International Sematech (ISMT) in Austin, Texas and is a product of collaboration between ISMT member companies and suppliers of advanced defect inspection equipment. These wafers provide the use with known defect types and sizes in predetermined locations across the entire wafer. The wafers are designed to incorporate several desired flows and use critical dimensions consistent with current and future technology nodes. This paper briefly describes the design of the IDA wafer and details many practical applications in the control of advanced defect inspection equipment.

Thousands of Stellar SiO masers in the Galactic center: The Bulge Asymmetries and Dynamic Evolution (BAaDE) survey

NASA Astrophysics Data System (ADS)

Sjouwerman, Loránt O.; Pihlström, Ylva M.; Rich, R. Michael; Morris, Mark R.; Claussen, Mark J.

2017-01-01

A radio survey of red giant SiO sources in the inner Galaxy and bulge is not hindered by extinction. Accurate stellar velocities (<1 km/s) are obtained with minimal observing time (<1 min) per source. Detecting over 20,000 SiO maser sources yields data comparable to optical surveys with the additional strength of a much more thorough coverage of the highly obscured inner Galaxy. Modeling of such a large sample would reveal dynamical structures and minority populations; the velocity structure can be compared to kinematic structures seen in molecular gas, complex orbit structure in the bar, or stellar streams resulting from recently infallen systems. Our Bulge Asymmetries and Dynamic Evolution (BAaDE) survey yields bright SiO masers suitable for follow-up Galactic orbit and parallax determination using VLBI. Here we outline our early VLA observations at 43 GHz in the northern bulge and Galactic plane (0bulge (250

Extinction maps toward the Milky Way bulge: Two-dimensional and three-dimensional tests with apogee

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultheis, M.; Zasowski, G.; Allende Prieto, C.

Galactic interstellar extinction maps are powerful and necessary tools for Milky Way structure and stellar population analyses, particularly toward the heavily reddened bulge and in the midplane. However, due to the difficulty of obtaining reliable extinction measures and distances for a large number of stars that are independent of these maps, tests of their accuracy and systematics have been limited. Our goal is to assess a variety of photometric stellar extinction estimates, including both two-dimensional and three-dimensional extinction maps, using independent extinction measures based on a large spectroscopic sample of stars toward the Milky Way bulge. We employ stellar atmosphericmore » parameters derived from high-resolution H-band Apache Point Observatory Galactic Evolution Experiment (APOGEE) spectra, combined with theoretical stellar isochrones, to calculate line-of-sight extinction and distances for a sample of more than 2400 giants toward the Milky Way bulge. We compare these extinction values to those predicted by individual near-IR and near+mid-IR stellar colors, two-dimensional bulge extinction maps, and three-dimensional extinction maps. The long baseline, near+mid-IR stellar colors are, on average, the most accurate predictors of the APOGEE extinction estimates, and the two-dimensional and three-dimensional extinction maps derived from different stellar populations along different sightlines show varying degrees of reliability. We present the results of all of the comparisons and discuss reasons for the observed discrepancies. We also demonstrate how the particular stellar atmospheric models adopted can have a strong impact on this type of analysis, and discuss related caveats.« less

Contactless measurement of electrical conductivity of semiconductor wafers using the reflection of millimeter waves

NASA Astrophysics Data System (ADS)

Ju, Yang; Inoue, Kojiro; Saka, Masumi; Abe, Hiroyuki

2002-11-01

We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter waves. A focusing sensor was developed to focus a 110 GHz millimeter wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter wave signal were measured by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafers. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

NASA Astrophysics Data System (ADS)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

1366 Project Automate: Enabling Automation for <$0.10/W High-Efficiency Kerfless Wafers Manufactured in the US

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenz, Adam

For photovoltaic (PV) manufacturing to thrive in the U.S., there must be an innovative core to the technology. Project Automate builds on 1366’s proprietary Direct Wafer® kerfless wafer technology and aims to unlock the cost and efficiency advantages of thin kerfless wafers. Direct Wafer is an innovative, U.S.-friendly (efficient, low-labor content) manufacturing process that addresses the main cost barrier limiting silicon PV cost-reductions – the 35-year-old grand challenge of manufacturing quality wafers (40% of the cost of modules) without the cost and waste of sawing. This simple, scalable process will allow 1366 to manufacture “drop-in” replacement wafers for the $10more » billion silicon PV wafer market at 50% of the cost, 60% of the capital, and 30% of the electricity of conventional casting and sawing manufacturing processes. This SolarMat project developed the Direct Wafer processes’ unique capability to tailor the shape of wafers to simultaneously make thinner AND stronger wafers (with lower silicon usage) that enable high-efficiency cell architectures. By producing wafers with a unique target geometry including a thick border (which determines handling characteristics) and thin interior regions (which control light capture and electron transport and therefore determine efficiency), 1366 can simultaneously improve quality and lower cost (using less silicon).« less

Surface etching technologies for monocrystalline silicon wafer solar cells

NASA Astrophysics Data System (ADS)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

Images in the rocket ultraviolet - The stellar population in the central bulge of M31

NASA Technical Reports Server (NTRS)

Bohlin, R. C.; Cornett, R. H.; Hill, J. K.; Hill, R. S.; Oconnell, R. W.; Stecher, T. P.

1985-01-01

Imagery of the bulge of M31 obtained with a rocket-borne telescope in two broad bands centered at 1460 A and 2380 A is discussed. The UV spatial profiles over a region about 200 arcsec wide are identical with those at visible wavelengths. The absence of detectable point sources indicates that main-sequence stars hotter than B0 V are not present in the bulge. It is suggested that the far-UV flux in old stellar populations originates in post-AGB stars. The UV flux from such stars is extremely sensitive to age and the physics of their previous mass loss.

Barlenses and X-shaped features compared: two manifestations of boxy/peanut bulges

NASA Astrophysics Data System (ADS)

Laurikainen, E.; Salo, H.

2017-02-01

Aims: We study the morphological characteristics of boxy/peanut-shaped bulges. In particular, we are interested to determine whether most of the flux associated with bulges in galaxies with masses similar to those of the Milky Way at redshift z 0 might belong to the vertically thick inner part of the bar, in a similar manner as in the Milky Way itself. At high galaxy inclinations, these structures are observed as boxy/peanut/X-shaped features, and when the view is near to face-on, they are observed as barlenses. We also study the possibility that bulges in some fraction of unbarred galaxies might form in a similar manner as the bulges in barred galaxies. Methods: We used the Spitzer Survey of Stellar Structure in Galaxies (S4G) and the Near-IR S0 galaxy Survey (NIRS0S) to compile complete samples of galaxies with barlenses (N = 85) and X-shaped features (N = 88). A sample of unbarred galaxies (N = 41) is also selected. For all 214 galaxies unsharp mask images were created, used to recognize the X-shaped features and to measure their linear sizes. To detect possible boxy isophotes (using the B4-parameter), we also performed an isophotal analysis for the barlens galaxies. We use recently published N-body simulations: the models that exhibit boxy/peanut/X/barlens morphologies are viewed from isotropically chosen directions that cover the full range of galaxy inclinations in the sky. The synthetic images were analyzed in a similar manner as the observations. Results: This is the first time that the observed properties of barlenses and X-shaped features are directly compared across a wide range of galaxy inclinations. A comparison with the simulation models shows that the differences in their apparent sizes, a/rbar ≳ 0.5 for barlenses and a/rbar ≲ 0.5 for X-shapes, can be explained by projection effects. Observations at various inclinations are consistent with intrinsic abl ≈ aX ≈ 0.5rbar: here intrinsic size means the face-on semimajor axis length for bars and

Advanced FTIR technology for the chemical characterization of product wafers

NASA Astrophysics Data System (ADS)

Rosenthal, P. A.; Bosch-Charpenay, S.; Xu, J.; Yakovlev, V.; Solomon, P. R.

2001-01-01

Advances in chemically sensitive diagnostic techniques are needed for the characterization of compositionally variable materials such as chemically amplified resists, low-k dielectrics and BPSG films on product wafers. In this context, Fourier Transform Infrared (FTIR) reflectance spectroscopy is emerging as a preferred technique to characterize film chemistry and composition, due to its non-destructive nature and excellent sensitivity to molecular bonds and free carriers. While FTIR has been widely used in R&D environments, its application to mainstream production metrology and process monitoring on product wafers has historically been limited. These limitations have been eliminated in a series of recent FTIR technology advances, which include the use of 1) new sampling optics, which suppress artifact backside reflections and 2) comprehensive model-based analysis. With these recent improvements, it is now possible to characterize films on standard single-side polished product wafers with much simpler training wafer sets and machine-independent calibrations. In this new approach, the chemistry of the films is tracked via the measured infrared optical constants as opposed to conventional absorbance measurements. The extracted spectral optical constants can then be reduced to a limited set of parameters for process control. This paper describes the application of this new FTIR methodology to the characterization of 1) DUV photoresists after various processing steps, 2) low-k materials of different types and after various curing conditions, and 3) doped glass BPSG films of various concentration and, for the first time, widely different thicknesses. Such measurements can be used for improved process control on actual product wafers.

RADIO DETECTION PROSPECTS FOR A BULGE POPULATION OF MILLISECOND PULSARS AS SUGGESTED BY FERMI-LAT OBSERVATIONS OF THE INNER GALAXY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calore, F.; Weniger, C.; Mauro, M. Di

The dense stellar environment of the Galactic center has been proposed to host a large population of as-yet undetected millisecond pulsars (MSPs). Recently, this hypothesis has found support in an analysis of gamma-rays detected using the Large Area Telescope onboard the Fermi satellite, which revealed an excess of diffuse GeV photons in the inner 15 deg about the Galactic center. The excess can be interpreted as the collective emission of thousands of MSPs in the Galactic bulge, with a spherical distribution strongly peaked toward the Galactic center. In order to fully establish the MSP interpretation, it is essential to findmore » corroborating evidence in multi-wavelength searches, most notably through the detection of radio pulsations from individual bulge MSPs. Based on globular cluster observations and gamma-ray emission from the inner Galaxy, we investigate the prospects for detecting MSPs in the Galactic bulge. While previous pulsar surveys failed to identify this population, we demonstrate that upcoming large-area surveys of this region should lead to the detection of dozens of bulge MSPs. Additionally, we show that deep targeted searches of unassociated Fermi sources should be able to detect the first few MSPs in the bulge. The prospects for these deep searches are enhanced by a tentative gamma-ray/radio correlation that we infer from high-latitude gamma-ray MSPs. Such detections would constitute the first clear discoveries of field MSPs in the Galactic bulge, with far-reaching implications for gamma-ray observations, the formation history of the central Milky Way, and strategy optimization for future deep radio pulsar surveys.« less

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Characteristics of nanocomposites and semiconductor heterostructure wafers using THz spectroscopy

NASA Astrophysics Data System (ADS)

Altan, Hakan

All optical, THz-Time Domain Spectroscopic (THz-TDS) methods were employed towards determining the electrical characteristics of Single Walled Carbon Nanotubes, Ion Implanted Si nanoclusters and Si1-xGe x, HFO2, SiO2 on p-type Si wafers. For the nanoscale composite materials, Visible Pump/THz Probe spectroscopy measurements were performed after observing that the samples were not sensitive to the THz radiation alone. The results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photo-induced localized states from 0.2 to 0.7THz. The THz transmission is modeled through the photoexcited layer with an effective dielectric constant described by a Drude + Lorentz model and given by Maxwell-Garnett theory. Comparisons are made with other prevalent theories that describe electronic transport. Similar experiments were repeated for ion-implanted, 3-4nm Si nanoclusters in fused silica for which a similar behavior was observed. In addition, a change in reflection from Si1-xGex on Si, 200mm diameter semiconductor heterostructure wafers with 10% or 15% Ge content, was measured using THz-TDS methods. Drude model is utilized for the transmission/reflection measurements and from the reflection data the mobility of each wafer is estimated. Furthermore, the effect of high-kappa dielectric material (HfO2) on the electrical properties of p-type silicon wafers was characterized by utilizing non-contact, differential (pump-pump off) spectroscopic methods to differ between HfO2 and SiO 2 on Si wafers. The measurements are analyzed in two distinct transmission models, where one is an exact representation of the layered structure for each wafer and the other assumed that the response observed from the differential THz transmission was solely due to effects from interfacial traps between the dielectric layer and the substrate. The latter gave a more accurate picture of the carrier dynamics. From these measurements the effect of interfacial defects on

Mechanics of wafer bonding: Effect of clamping

NASA Astrophysics Data System (ADS)

Turner, K. T.; Thouless, M. D.; Spearing, S. M.

2004-01-01

A mechanics-based model is developed to examine the effects of clamping during wafer bonding processes. The model provides closed-form expressions that relate the initial geometry and elastic properties of the wafers to the final shape of the bonded pair and the strain energy release rate at the interface for two different clamping configurations. The results demonstrate that the curvature of bonded pairs may be controlled through the use of specific clamping arrangements during the bonding process. Furthermore, it is demonstrated that the strain energy release rate depends on the clamping configuration and that using applied loads usually leads to an undesirable increase in the strain energy release rate. The results are discussed in detail and implications for process development and bonding tool design are highlighted.

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor)

2017-01-01

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Thermal stress during RTP processes and its possible effect on the light induced degradation in Cz-Si wafers

NASA Astrophysics Data System (ADS)

Kouhlane, Yacine; Bouhafs, Djoudi; Khelifati, Nabil; Guenda, Abdelkader; Demagh, Nacer-Eddine; Demagh, Assia; Pfeiffer, Pierre; Mezghiche, Salah; Hetatache, Warda; Derkaoui, Fahima; Nasraoui, Chahinez; Nwadiaru, Ogechi Vivian

2018-04-01

In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD system on both surfaces. Then the wafers were subjected to an RTP cycle at a peak temperature of 620 °C. The first wafer was protected (PW) from the direct radiative heating of the RTP furnace by placing the wafer between two as-cut Cz-Si shield wafers during the heat processing. The second wafer was not protected (NPW) and followed the same RTP cycle procedure. The carrier lifetime τ eff was measured using the QSSPC technique before and after illumination for 5 h duration at 0.5 suns. The immediate results of the measured lifetime (τ RTP ) after the RTP process have shown a regeneration in the lifetime of the two wafers with the PW wafer exhibiting an important enhancement in τ RTP as compared to the NPW wafer. The QSSPC measurements have indicated a good stable lifetime (τ d ) and a weak degradation effect was observed in the case of the PW wafer as compared to their initial lifetime value. Interferometry technique analyses have shown an enhancement in the surface roughness for the NPW wafer as compared to the protected one. Additionally, to improve the correlation between the RTP heat radiation stress and the carrier lifetime behavior, a simulation of the thermal stress and temperature profile using the finite element method on the wafers surface at RTP peak temperature of 620 °C was performed. The results confirm the reduction of the thermal stress with less heat losses for the PW wafer. Finally, the proposed method can lead to improving the lifetime of wafers by an RTP process at minimum energy costs.

Chemodynamical modelling of the galactic bulge and bar

NASA Astrophysics Data System (ADS)

Portail, Matthieu; Wegg, Christopher; Gerhard, Ortwin; Ness, Melissa

2017-09-01

We present the first self-consistent chemodynamical model fitted to reproduce data for the galactic bulge, bar and inner disc. We extend the Made-to-Measure method to an augmented phase-space including the metallicity of stars, and show its first application to the bar region of the Milky Way. Using data from the ARGOS and APOGEE (DR12) surveys, we adapt the recent dynamical model from Portail et al. to reproduce the observed spatial and kinematic variations as a function of metallicity, thus allowing the detailed study of the 3D density distributions, kinematics and orbital structure of stars in different metallicity bins. We find that metal-rich stars with [Fe/H] ≥ -0.5 are strongly barred and have dynamical properties that are consistent with a common disc origin. Metal-poor stars with [Fe/H] ≤ -0.5 show strong kinematic variations with metallicity, indicating varying contributions from the underlying stellar populations. Outside the central kpc, metal-poor stars are found to have the density and kinematics of a thick disc while in the inner kpc, evidence for an extra concentration of metal-poor stars is found. Finally, the combined orbit distributions of all metallicities in the model naturally reproduce the observed vertex deviations in the bulge. This paper demonstrates the power of Made-to-Measure chemodynamical models, that when extended to other chemical dimensions will be very powerful tools to maximize the information obtained from large spectroscopic surveys such as APOGEE, GALAH and MOONS.

Full-wafer fabrication by nanostencil lithography of micro/nanomechanical mass sensors monolithically integrated with CMOS.

PubMed

Arcamone, J; van den Boogaart, M A F; Serra-Graells, F; Fraxedas, J; Brugger, J; Pérez-Murano, F

2008-07-30

Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 µm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ∼2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10(-11) g cm(-2) Hz(-1), and their thickness resolution corresponds to approximately a thousandth of a monolayer.

Plasmasphere dynamics in the duskside bulge region: A new look at old topic

NASA Technical Reports Server (NTRS)

Carpenter, D. L.; Giles, B. L.; Chappell, C. R.; Decreau, P. M. E.; Anderson, R. R.; Persoon, A. M.; Smith, A. J.; Corcuff, Y.; Canu, P.

1993-01-01

Data acquired during several multiday periods in 1982 at ground stations Siple, Halley, and Kerguelen and on satellites Dynamics Explorer 1, International Sun Earth Explorer 1, and GEOS 2 have been used to investigate thermal plasma structure and dynamics in the duskside plasmasphere bulge region of the Earth. The distribution of thermal plasma in the dusk bulge sector is difficult to describe realistically, in part because of the time integral manner in which the thermal plasma distribution depends upon on the effects of bulk cross-B flow and interchange plasma flows along B. While relatively simple MHD models can be useful for qualitatively predicting certain effects of enhanced convection on a quiet plasmasphere, such as an initial sunward entrainment of the outer regions, they are of limited value in predicting the duskside thermal plasma structures that are observed. Furthermore, use of such models can be misleading if one fails to realize that they do not address the question of the formation of the steep plasmapause profile or provide for a possible role of instabilities or other irreversible processes in plasmapause formation. Our specific findings, which are based both upon the present case studies and upon earlier work, include the following: (1) during active periods the plasmasphere appears to become divided into two entities, a main plasmasphere and a duskside bulge region. (2) in the aftermath of an increase in convection activity, the main plasmasphere tends (from a statistical point of view) to become roughly circular in equatorial cross section, with only a slight bulge at dusk; (3) the abrupt westward edge of the duskside bulge observed from whistlers represents a state in the evolution of sunward extending streamers; (4) in the aftermath of a weak magnetic storm, 10 to 30% of the plasma 'removed' from the outer plasmasphere appears to remain in the afternoon-dusk sector beyond the main plasmasphere. (5) outlying dense plasma structures may

VizieR Online Data Catalog: Galactic bulge eclipsing & ellipsoidal binaries (Soszynski+, 2016)

NASA Astrophysics Data System (ADS)

Soszynski, I.; Pawlak, M.; Pietrukowicz, P.; Udalski, A.; Szymanski, M. K.; Wyrzykowski, L.; Ulaczyk, K.; Poleski, R.; Kozlowski, S.; Skowron, D. M.; Skowron, J.; Mroz, P.; Hamanowicz, A.

2018-04-01

Our collection of binary systems in the Galactic bulge is based on the photometric data collected by the OGLE survey between 1997 and 2015 at Las Campanas Observatory, Chile, with the 1.3-m Warsaw Telescope. The observatory is operated by the Carnegie Institution for Science. In 1997-2000, during the OGLE-II stage, about 30 million stars in the area of 11 square degrees in the central parts of the Milky Way were constantly monitored. In 2001, with the beginning of the OGLE-III survey, the sky coverage was extended to nearly 69 square degrees and the number of monitored stars increased to 200 million. Finally, from 2010 until today the OGLE-IV project regularly observes about 400 million stars in 182 square degrees of the densest regions of the Galactic bulge. Our search for eclipsing variables was based primarily on the OGLE-IV data. (4 data files).

The formation of bulges, discs and two-component galaxies in the CANDELS Survey at z < 3

NASA Astrophysics Data System (ADS)

Margalef-Bentabol, Berta; Conselice, Christopher J.; Mortlock, Alice; Hartley, Will; Duncan, Kenneth; Ferguson, Harry C.; Dekel, Avishai; Primack, Joel R.

2016-09-01

We examine a sample of 1495 galaxies in the CANDELS fields to determine the evolution of two-component galaxies, including bulges and discs, within massive galaxies at the epoch 1 < z < 3 when the Hubble sequence forms. We fit all of our galaxies' light profiles with a single Sérsic fit, as well as with a combination of exponential and Sérsic profiles. The latter is done in order to describe a galaxy with an inner and an outer component, or bulge and disc component. We develop and use three classification methods (visual, F-test and the residual flux fraction) to separate our sample into one-component galaxies (disc/spheroids-like galaxies) and two-component galaxies (galaxies formed by an `inner part' or bulge and an `outer part' or disc). We then compare the results from using these three different ways to classify our galaxies. We find that the fraction of galaxies selected as two-component galaxies increases on average 50 per cent from the lowest mass bin to the most massive galaxies, and decreases with redshift by a factor of 4 from z = 1 to 3. We find that single Sérsic `disc-like' galaxies have the highest relative number densities at all redshifts, and that two-component galaxies have the greatest increase and become at par with Sérsic discs by z = 1. We also find that the systems we classify as two-component galaxies have an increase in the sizes of their outer components, or `discs', by about a factor of 3 from z = 3 to 1.5, while the inner components or `bulges' stay roughly the same size. This suggests that these systems are growing from the inside out, whilst the bulges or protobulges are in place early in the history of these galaxies. This is also seen to a lesser degree in the growth of single `disc-like' galaxies versus `spheroid-like' galaxies over the same epoch.

Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

PubMed Central

Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

2016-01-01

Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity

NASA Astrophysics Data System (ADS)

Skenes, Kevin; Kumar, Arkadeep; Prasath, R. G. R.; Danyluk, Steven

2018-02-01

Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear.

Accurate characterization of wafer bond toughness with the double cantilever specimen

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Spearing, S. Mark

2008-01-01

The displacement loaded double cantilever test, also referred to as the "Maszara test" and the "crack opening method" by the wafer bonding community, is a common technique used to evaluate the interface toughness or surface energy of direct wafer bonds. While the specimen is widely used, there has been a persistent question as to the accuracy of the method since the actual specimen geometry differs from the ideal beam geometry assumed in the expression used for data reduction. The effect of conducting the test on whole wafer pairs, in which the arms of cantilevers are wide plates rather than slender beams, is examined in this work using finite element analysis. A model is developed to predict the equilibrium shape of the crack front and to develop a corrected expression for calculating interface toughness from crack length measurements obtained in tests conducted on whole wafer pairs. The finite element model, which is validated through comparison to experiments, demonstrates that using the traditional beam theory-based expressions for data reduction can lead to errors of up to 25%.

Sediment budget on African passive margins: a record of margin bulges and far field very long wavelength deformations

NASA Astrophysics Data System (ADS)

Guillocheau, Francois; Robin, Cécile; Baby, Guillaume; Simon, Brendan; Rouby, Delphine; Loparev, Artiom

2017-04-01

The post-rift siliciclastic sediment budget of passive margins is a function of (1) the deformation (uplift) of the upstream catchment, of (2) the climate (precipitation) regime and of (3) the oceanic circulation (mainly since Miocene times). The main questions in source to sink studies are (1) to quantify the relative importance of the erosion due to uplifts or to precipitation changes and (2) to characterize the source of the sediments. A source to sink study was carried out in Western, Central and Austral Africa, characterized by anorogenic relief (plains and plateaus) that record long (several 100 km) to very long (several 1000 km) wavelength deformations respectively of lithospheric and mantle origin. The sink measurement was based on seismic lines and wells (industrial - IODP) using the VolumeEstimator software including the calculation of the uncertainties (Guillocheau et al., 2013, Basin Research). The source study was performed using dated stepped planation surfaces (etchplains and pediplains), mappable at catchments-scale (Guillocheau et al., in press, Gondwana Research). Results: (1) Deformation (uplift) is the dominant control of the sediment budget. Climate (precipitation) changes only enhance or inhibit a deformation-controlled flux. (2) The sources of siliciclastic sediments are either closed marginal bulges or far field domes due to mantle dynamics with river by-passing over long-lasting polygenic surfaces located between the bulges and domes. Two main periods of African-scale deformations (contemporaneous with an increase of the sedimentary flux) are confirmed, one during Late Cretaceous (Turonian-Coniacian) and the second around the Eocene-Oligocene boundary with a gap and intense chemical erosion from 75 Ma and mainly from 65 to 40 Ma.

Scatterometry on pelliclized masks: an option for wafer fabs

NASA Astrophysics Data System (ADS)

Gallagher, Emily; Benson, Craig; Higuchi, Masaru; Okumoto, Yasuhiro; Kwon, Michael; Yedur, Sanjay; Li, Shifang; Lee, Sangbong; Tabet, Milad

2007-03-01

Optical scatterometry-based metrology is now widely used in wafer fabs for lithography, etch, and CMP applications. This acceptance of a new metrology method occurred despite the abundance of wellestablished CD-SEM and AFM methods. It was driven by the desire to make measurements faster and with a lower cost of ownership. Over the last year, scatterometry has also been introduced in advanced mask shops for mask measurements. Binary and phase shift masks have been successfully measured at all desired points during photomask production before the pellicle is mounted. There is a significant benefit to measuring masks with the pellicle in place. From the wafer fab's perspective, through-pellicle metrology would verify mask effects on the same features that are characterized on wafer. On-site mask verification would enable quality control and trouble-shooting without returning the mask to a mask house. Another potential application is monitoring changes to mask films once the mask has been delivered to the fab (haze, oxide growth, etc.). Similar opportunities apply to the mask metrologist receiving line returns from a wafer fab. The ability to make line-return measurements without risking defect introduction is clearly attractive. This paper will evaluate the feasibility of collecting scatterometry data on pelliclized masks. We explore the effects of several different pellicle types on scatterometry measurements made with broadband light in the range of 320-780 nm. The complexity introduced by the pellicles' optical behavior will be studied.

Wafer plane inspection with soft resist thresholding

NASA Astrophysics Data System (ADS)

Hess, Carl; Shi, Rui-fang; Wihl, Mark; Xiong, Yalin; Pang, Song

2008-10-01

Wafer Plane Inspection (WPI) is an inspection mode on the KLA-Tencor TeraScaTM platform that uses the high signalto- noise ratio images from the high numerical aperture microscope, and then models the entire lithographic process to enable defect detection on the wafer plane[1]. This technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. WPI accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. There are several advantages to this approach: (1) the high fidelity of the images provide a sensitivity advantage over competing approaches; (2) the ability to perform defect detection on the wafer plane allows one to only see those defects that have a printing impact on the wafer; (3) the use of modeling on the lithographic portion of the flow enables unprecedented flexibility to support arbitrary illumination profiles, process-window inspection in unit time, and combination modes to find both printing and non-printing defects. WPI is proving to be a valuable addition to the KLA-Tencor detection algorithm suite. The modeling portion of WPI uses a single resist threshold as the final step in the processing. This has been shown to be adequate on several advanced customer layers, but is not ideal for all layers. Actual resist chemistry has complicated processes including acid and base-diffusion and quench that are not consistently well-modeled with a single resist threshold. We have considered the use of an advanced resist model for WPI, but rejected it because the burdensome requirements for the calibration of the model were not practical for reticle inspection. This paper describes an alternative approach that allows for a "soft" resist threshold to be applied that provides a more robust solution for the most challenging processes. This approach is just

The Optical Gravitational Lensing Experiment Catalog of stellar proper motions in the OGLE-II Galactic bulge fields

NASA Astrophysics Data System (ADS)

Sumi, T.; Wu, X.; Udalski, A.; Szymański, M.; Kubiak, M.; Pietrzyński, G.; Soszyński, I.; Woźniak, P.; Zebruń, K.; Szewczyk, O.; Wyrzykowski, L.

2003-12-01

We present proper motion (μ ) catalogue of 5,078,188 stars in 49 Optical Gravitational Lensing Experiment II (OGLE-II) Galactic bulge fields, with the total area close to 11 square degrees. The proper motion measurements are based on 138 - 555 I-band images taken during four observing seasons: 1997-2000. The catalogue stars are in the magnitude range 11 < I < 18 mag. In particular, the catalogue includes Red Clump Giants (RCGs) and Red Giants in the Galactic Bulge, and main sequence stars in the Galactic disc. The proper motions up to μ = 500 mas yr -1 were measured with the mean accuracy of 0.8 ˜ 3.5 mas yr-1, depending on the brightness of a star. This catalogue may be useful for studying the kinematic of stars in the Galactic Bulge and the Galactic disk with Extinction maps in these fields which are construncted by using two-band photometry of RCGs.

Particle detection for patterned wafers of 100nm design rule by evanescent light illumination: analysis of evanescent light scattering using Finite-Difference Time-Domain (FDTD) method

NASA Astrophysics Data System (ADS)

Yoshioka, Toshie; Miyoshi, Takashi; Takaya, Yasuhiro

2005-12-01

To realize high productivity and reliability of the semiconductor, patterned wafers inspection technology to maintain high yield becomes essential in modern semiconductor manufacturing processes. As circuit feature is scaled below 100nm, the conventional imaging and light scattering methods are impossible to apply to the patterned wafers inspection technique, because of diffraction limit and lower S/N ratio. So, we propose a new particle detection method using annular evanescent light illumination. In this method, a converging annular light used as a light source is incident on a micro-hemispherical lens. When the converging angle is larger than critical angle, annular evanescent light is generated under the bottom surface of the hemispherical lens. Evanescent light is localized near by the bottom surface and decays exponentially away from the bottom surface. So, the evanescent light selectively illuminates the particles on the patterned wafer surface, because it can't illuminate the patterned wafer surface. The proposed method evaluates particles on a patterned wafer surface by detecting scattered evanescent light distribution from particles. To analyze the fundamental characteristics of the proposed method, the computer simulation was performed using FDTD method. The simulation results show that the proposed method is effective for detecting 100nm size particle on patterned wafer of 100nm lines and spaces, particularly under the condition that the evanescent light illumination with p-polarization and parallel incident to the line orientation. Finally, the experiment results suggest that 220nm size particle on patterned wafer of about 200nm lines and spaces can be detected.

MiRNA-181d Expression Significantly Affects Treatment Responses to Carmustine Wafer Implantation.

PubMed

Sippl, Christoph; Ketter, Ralf; Bohr, Lisa; Kim, Yoo Jin; List, Markus; Oertel, Joachim; Urbschat, Steffi

2018-05-26

Standard therapeutic protocols for glioblastoma, the most aggressive type of brain cancer, include surgery followed by chemoradiotherapy. Additionally, carmustine-eluting wafers can be implanted locally into the resection cavity. To evaluate microRNA (miRNA)-181d as a prognostic marker of responses to carmustine wafer implantation. A total of 80 glioblastoma patients (40/group) were included in a matched pair analysis. One group (carmustine wafer group) received concomitant chemoradiotherapy with carmustine wafer implantation (Stupp protocol). The second group (control group) received only concomitant chemoradiotherapy. All tumor specimens were subjected to evaluations of miRNA-181d expression, results were correlated with further individual clinical data. The Cancer Genome Atlas (TCGA) dataset of 149 patients was used as an independent cohort to validate the results. Patients in the carmustine wafer group with low miRNA-181d expression had significantly longer overall (hazard ratio [HR], 35.03, [95% confidence interval (CI): 3.50-350.23], P = .002) and progression-free survival (HR, 20.23, [95% CI: 2.19-186.86], P = .008) than patients of the same group with a high miRNA-181d expression. These correlations were not observed in the control group. The nonsignificance in the control group was confirmed in the independent TCGA dataset. The carmustine wafer group patients with low miRNA-181d expression also had a significantly longer progression-free (P = .049) and overall survival (OS) (P = .034), compared with control group patients. Gross total resection correlated significantly with longer OS (P = .023). MiRNA-181d expression significantly affects treatment responses to carmustine wafer implantation.

Grain-boundary type and distribution in silicon carbide coatings and wafers

NASA Astrophysics Data System (ADS)

Cancino-Trejo, Felix; López-Honorato, Eddie; Walker, Ross C.; Ferrer, Romelia Salomon

2018-03-01

Silicon carbide is the main diffusion barrier against metallic fission products in TRISO (tristructural isotropic) coated fuel particles. The explanation of the accelerated diffusion of silver through SiC has remained a challenge for more than four decades. Although, it is now well accepted that silver diffuse through SiC by grain boundary diffusion, little is known about the characteristics of the grain boundaries in SiC and how these change depending on the type of sample. In this work five different types (coatings and wafers) of SiC produced by chemical vapor deposition were characterized by electron backscatter diffraction (EBSD). The SiC in TRISO particles had a higher concentration of high angle grain boundaries (aprox. 70%) compared to SiC wafers, which ranged between 30 and 60%. Similarly, SiC wafers had a higher concentration of low angle grain boundaries ranging between 15 and 30%, whereas TRISO particles only reached values of around 7%. The same trend remained when comparing the content of coincidence site lattice (CSL) boundaries, since SiC wafers showed a concentration of more than 30%, whilst TRISO particles had contents of around 20%. In all samples the largest fractions of CSL boundaries (3 ≤ Σ ≤ 17) were the Σ3 boundaries. We show that there are important differences between the SiC in TRISO particles and SiC wafers which could explain some of the differences observed in diffusion experiments in the literature.

Mechanical Properties of Photovoltaic Silicon in Relation to Wafer Breakage

NASA Astrophysics Data System (ADS)

Kulshreshtha, Prashant Kumar

the surface/edge micro-cracks (i.e. sources of crack initiation). The low load (<10mN) nanoindentations using Hysitron Triboindenter RTM have been applied to estimate the zone of crack-propagation related plastic deformation and amorphization around the radial or the lateral cracks. The gradual reduction in hardness due to local stress field and phase change around the crack has been established using electron back scattered diffraction (EBSD), atomic force microscopy (AFM) and Raman spectroscopy, respectively, at nano- and micro-scale. The load (P) vs. displacement (h) curves depict characteristic phase transformation events (eg. elbow or pop-out) depending on the sign of residual stress in the silicon lattice. The formation of Si-XII/III phases (elastic phases) in large volumes during indentation of compressed Si lattice have been discussed as an option to eliminate the edge micro-cracks formed during wafer sawing by ductile flow. The stress gradient at an interface, which can be a grain-boundary (GB), twin or a interface between silicon and precipitate, has been evaluated for crack path modification. An direct-silicon-bonded (DSB) based ideal [110]/[100] interface has been examined to study the effect of crystallographic orientation variation across a planar silicon 2D boundary. Using constant source diffusion/annealing process, Fe and Cu impurities have been incorporated in model [110]/[100]GB to provide equivalence to a real decorated multi-crystalline grain boundary. We found that Fe precipitates harden the undecorated GB structure, whereas Cu precipitates introduce dislocation-induced plasticity to soften it. Aluminum Schottky diodes have been evaporated on the DSB samples to sensitively detect the instantaneous current response from the phase-transformed Si under nanoindenter tip. The impact of metallic impurity and their precipitates on characteristic phase transformations (i.e. pop-in or pop-out) demonstrate that scattered distribution of large Cu

CHARACTERIZATION OF A SAMPLE OF INTERMEDIATE-TYPE ACTIVE GALACTIC NUCLEI. II. HOST BULGE PROPERTIES AND BLACK HOLE MASS ESTIMATES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benitez, Erika; Cruz-Gonzalez, Irene; Martinez, Benoni

2013-02-15

We present a study of the host bulge properties and their relations with the black hole mass for a sample of 10 intermediate-type active galactic nuclei (AGNs). Our sample consists mainly of early-type spirals, four of them hosting a bar. For 70{sup +10} {sub -17}% of the galaxies, we have been able to determine the type of the bulge, and find that these objects probably harbor a pseudobulge or a combination of classical bulge/pseudobulge, suggesting that pseudobulges might be frequent in intermediate-type AGNs. In our sample, 50% {+-} 14% of the objects show double-peaked emission lines. Therefore, narrow double-peaked emissionmore » lines seem to be frequent in galaxies harboring a pseudobulge or a combination of classical bulge/pseudobulge. Depending on the bulge type, we estimated the black hole mass using the corresponding M {sub BH}-{sigma}* relation and found them within a range of 5.69 {+-} 0.21 < log M {sup {sigma}}*{sub BH} < 8.09 {+-} 0.24. Comparing these M {sup {sigma}}*{sub BH} values with masses derived from the FWHM of H{beta} and the continuum luminosity at 5100 A from their SDSS-DR7 spectra (M {sub BH}), we find that 8 out of 10 (80{sup +7} {sub -17}%) galaxies have black hole masses that are compatible within a factor of 3. This result would support that M {sub BH} and M {sup {sigma}}*{sub BH} are the same for intermediate-type AGNs, as has been found for type 1 AGNs. However, when the type of the bulge is taken into account, only three out of the seven (43{sup +18} {sub -15}%) objects of the sample have their M {sup {sigma}}*{sub BH} and M {sub BH} compatible within 3{sigma} errors. We also find that estimations based on the M {sub BH}-{sigma}* relation for pseudobulges are not compatible in 50% {+-} 20% of the objects.« less

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

NASA Astrophysics Data System (ADS)

Miki, N.; Spearing, S. M.

2003-11-01

Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness, however, this relationship has not been quantified. This article explicitly correlates the bond quality, which is quantified by the apparent bonding energy, and the surface morphology via the bearing ratio, which describes the area of surface lying above a given depth. The apparent bonding energy is considered to be proportional to the real area of contact. The effective area of contact is defined as the area sufficiently close to contribute to the attractive force between the two bonding wafers. Experiments were conducted with silicon wafers whose surfaces were roughened by a buffered oxide etch solution (BOE, HF:NH4F=1:7) and/or a potassium hydroxide solution. The surface roughness was measured by atomic force microscopy. The wafers were direct bonded to polished "monitor" wafers following a standard RCA cleaning and the resulting bonding energy was measured by the crack-opening method. The experimental results revealed a clear correlation between the bonding energy and the bearing ratio. A bearing depth of ˜1.4 nm was found to be appropriate for the characterization of direct-bonded silicon at room temperature, which is consistent with the thickness of the water layer at the interface responsible for the hydrogen bonds that link the mating wafers.

Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters

NASA Astrophysics Data System (ADS)

Wu, Aimin; Wang, Xi; Wei, Xing; Chen, Jing; Chen, Ming; Zhang, Zhengxuan

2009-05-01

Si ion-implantation and post annealing of silicon wafers prior to wafer bonding were used to radiation-harden the thermal oxide layer of Silicon on Insulator structures. After grinding and polishing, Total-Dose-Radiation-Hardened SOI (TDRH-SOI) wafers with several-micron-thick device layers were prepared. Electrical characterization before and after X-ray irradiation showed that the flatband voltage shift induced by irradiation was reduced by this preprocessing. Photoluminescence Spectroscopy (PL), Transmission Electron Microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results indicated that the improvement of the total dose response of the TDRH-SOI wafer was associated with formation of Si nanoclusters in the implanted oxide layer, suggesting that these were the likely candidates for electron and proton trapping centers that reduce the positive charge buildup effect in the buried oxide.

A CATALOG OF BULGE+DISK DECOMPOSITIONS AND UPDATED PHOTOMETRY FOR 1.12 MILLION GALAXIES IN THE SLOAN DIGITAL SKY SURVEY

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simard, Luc; McConnachie, Alan W.; Trevor Mendel, J.

We perform two-dimensional, point-spread-function-convolved, bulge+disk decompositions in the g and r bandpasses on a sample of 1,123,718 galaxies from the Legacy area of the Sloan Digital Sky Survey Data Release Seven. Four different decomposition procedures are investigated which make improvements to sky background determinations and object deblending over the standard SDSS procedures that lead to more robust structural parameters and integrated galaxy magnitudes and colors, especially in crowded environments. We use a set of science-based quality assurance metrics, namely, the disk luminosity-size relation, the galaxy color-magnitude diagram, and the galaxy central (fiber) colors to show the robustness of our structuralmore » parameters. The best procedure utilizes simultaneous, two-bandpass decompositions. Bulge and disk photometric errors remain below 0.1 mag down to bulge and disk magnitudes of g {approx_equal} 19 and r {approx_equal} 18.5. We also use and compare three different galaxy fitting models: a pure Sersic model, an n{sub b} = 4 bulge + disk model, and a Sersic (free n{sub b}) bulge + disk model. The most appropriate model for a given galaxy is determined by the F-test probability. All three catalogs of measured structural parameters, rest-frame magnitudes, and colors are publicly released here. These catalogs should provide an extensive comparison set for a wide range of observational and theoretical studies of galaxies.« less

A near-infrared high-resolution spectroscopic survey of bulge stars - JASMINE prestudy

NASA Astrophysics Data System (ADS)

Tsujimoto, T.; Gouda, N.; Kobayashi, N.; Yasui, C.; Kondo, S.; Minami, A.; Motohara, K.; Ikeda, Y.

2006-08-01

We are developing a new near-infrared high-resolution (R[max]= 100,000) and high-sensitive spectrograph WINERED, which is specifically customized for short NIR bands at 0.9-1.35 μm. WINERED employs the novelty in the optical system; a potable design and a warm optics without any cold stops. The planned astrometric space mission JASMINE will provide the exact positions, distances, and proper motions of the bulge stars. The missing components, the radial velocity and chemical compositions will be measured by WINERED with high accuracies (δV< 1km/s). These combined data brought by JASMINE and WINERED will certainly reveal the nature of the Galactic bulge. We plan to complete this instrument for the observation of a single object by the end of 2008 and hope to attach it to various 4-10m telescopes as a PI-type instrument. In succession, we will develop it to the design for a simultaneous multi-object spectroscopy.

Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

PubMed

Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

2013-11-22

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, S.; Yan, F.; Dorn, D.

2012-06-01

Photoluminescence (PL) imaging techniques can be applied to multicrystalline silicon wafers throughout the manufacturing process. Both band-to-band PL and defect-band emissions, which are longer-wavelength emissions from sub-bandgap transitions, are used to characterize wafer quality and defect content on starting multicrystalline silicon wafers and neighboring wafers processed at each step through completion of finished cells. Both PL imaging techniques spatially highlight defect regions that represent dislocations and defect clusters. The relative intensities of these imaged defect regions change with processing. Band-to-band PL on wafers in the later steps of processing shows good correlation to cell quality and performance. The defect bandmore » images show regions that change relative intensity through processing, and better correlation to cell efficiency and reverse-bias breakdown is more evident at the starting wafer stage as opposed to later process steps. We show that thermal processing in the 200 degrees - 400 degrees C range causes impurities to diffuse to different defect regions, changing their relative defect band emissions.« less

Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques

NASA Astrophysics Data System (ADS)

Syed, Ahmed Rashid

Among the great physical challenges faced by the current front-end semiconductor equipment manufacturers is the accurate and repeatable surface temperature measurement of wafers during various fabrication steps. Close monitoring of temperature is essential in that it ensures desirable device characteristics to be reliably reproduced across various wafer lots. No where is the need to control temperature more pronounced than it is during Rapid Thermal Processing (RTP) which involves temperature ramp rates in excess of 200°C/s. This dissertation presents an elegant and practical approach to solve the wafer surface temperature estimation problem, in context of RTP, by deploying hardware that acquires the necessary data while preserving the integrity and purity of the wafer. In contrast to the widely used wafer-contacting (and hence contaminating) methods, such as bonded thermocouples, or environment sensitive schemes, such as light-pipes and infrared pyrometry, the proposed research explores the concept of utilizing Lamb (acoustic) waves to detect changes in wafer surface temperature, during RTP. Acoustic waves are transmitted to the wafer via an array of quartz rods that normally props the wafer inside an RTP chamber. These waves are generated using piezoelectric transducers affixed to the bases of the quartz rods. The group velocity of Lamb waves traversing the wafer surface undergoes a monotonic decrease with rise in wafer temperature. The correspondence of delay in phase of the received Lamb waves and the ambient temperature, along all direct paths between sending and receiving transducers, yields a psuedo real-time thermal image of the wafer. Although the custom built hardware-setup implements the above "proof-of-concept" scheme by transceiving acoustic signals at a single frequency, the real-world application will seek to enhance the data acquistion. rate (>1000 temperature measurements per seconds) by sending and receiving Lamb waves at multiple frequencies (by

Smoother Scribing of Silicon Wafers

NASA Technical Reports Server (NTRS)

Danyluk, S.

1986-01-01

Proposed new tool used to scribe silicon wafers into chips more smoothly than before. New scriber produces surface that appears ductile. Scribed groove cuts have relatively smooth walls. Scriber consists of diamond pyramid point on rigid shaft. Ethanol flows through shaft and around point, like ink in ballpoint pen. Ethanol has significantly different effect for scribing silicon than water, used in conventional diamond scribers.

Commercial production of QWIP wafers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Fastenau, J. M.; Liu, W. K.; Fang, X. M.; Lubyshev, D. I.; Pelzel, R. I.; Yurasits, T. R.; Stewart, T. R.; Lee, J. H.; Li, S. S.; Tidrow, M. Z.

2001-06-01

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

Nanoimprint wafer and mask tool progress and status for high volume semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Matsuoka, Yoichi; Seki, Junichi; Nakayama, Takahiro; Nakagawa, Kazuki; Azuma, Hisanobu; Yamamoto, Kiyohito; Sato, Chiaki; Sakai, Fumio; Takabayashi, Yukio; Aghili, Ali; Mizuno, Makoto; Choi, Jin; Jones, Chris E.

2016-10-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution and in meeting the image placement specification for replica masks.

Surface modification of silicon wafer by grafting zwitterionic polymers to improve its antifouling property

NASA Astrophysics Data System (ADS)

Sun, Yunlong; Chen, Changlin; Xu, Heng; Lei, Kun; Xu, Guanzhe; Zhao, Li; Lang, Meidong

2017-10-01

Silicon (111) wafer was modified by triethoxyvinylsilane containing double bond as an intermedium, and then P4VP (polymer 4-vinyl pyridine) brush was "grafted" onto the surface of silicon wafer containing reactive double bonds by adopting the "grafting from" way and Si-P4VP substrate (silicon wafer grafted by P4VP) was obtained. Finally, P4VP brush of Si-P4VP substrate was modified by 1,3-propanesulfonate fully to obtain P4VP-psl brush (zwitterionic polypyridinium salt) and the functional Si-P4VP-psl substrate (silicon wafer grafted by zwitterionic polypyridinium salt based on polymer 4-vinyl pyridine) was obtained successfully. The antifouling property of the silicon wafer, the Si-P4VP substrate and the Si-P4VP-psl substrate was investigated by using bovine serum albumin, mononuclear macrophages (RAW 264.7) and Escherichia coli (E. coli) ATTC25922 as model bacterium. The results showed that compared with the blank sample-silicon wafer, the Si-P4VP-psl substrate had excellent anti-adhesion ability against bovine serum albumin, cells and bacterium, due to zwitterionic P4VP-psl brush (polymer 4-vinyl pyridine salt) having special functionality like antifouling ability on biomaterial field.

Yield impact for wafer shape misregistration-based binning for overlay APC diagnostic enhancement

NASA Astrophysics Data System (ADS)

Jayez, David; Jock, Kevin; Zhou, Yue; Govindarajulu, Venugopal; Zhang, Zhen; Anis, Fatima; Tijiwa-Birk, Felipe; Agarwal, Shivam

2018-03-01

The importance of traditionally acceptable sources of variation has started to become more critical as semiconductor technologies continue to push into smaller technology nodes. New metrology techniques are needed to pursue the process uniformity requirements needed for controllable lithography. Process control for lithography has the advantage of being able to adjust for cross-wafer variability, but this requires that all processes are close in matching between process tools/chambers for each process. When this is not the case, the cumulative line variability creates identifiable groups of wafers1 . This cumulative shape based effect is described as impacting overlay measurements and alignment by creating misregistration of the overlay marks. It is necessary to understand what requirements might go into developing a high volume manufacturing approach which leverages this grouping methodology, the key inputs and outputs, and what can be extracted from such an approach. It will be shown that this line variability can be quantified into a loss of electrical yield primarily at the edge of the wafer and proposes a methodology for root cause identification and improvement. This paper will cover the concept of wafer shape based grouping as a diagnostic tool for overlay control and containment, the challenges in implementing this in a manufacturing setting, and the limitations of this approach. This will be accomplished by showing that there are identifiable wafer shape based signatures. These shape based wafer signatures will be shown to be correlated to overlay misregistration, primarily at the edge. It will also be shown that by adjusting for this wafer shape signal, improvements can be made to both overlay as well as electrical yield. These improvements show an increase in edge yield, and a reduction in yield variability.

2D kinematic signatures of boxy/peanut bulges

NASA Astrophysics Data System (ADS)

Iannuzzi, Francesca; Athanassoula, E.

2015-07-01

We study the imprints of boxy/peanut structures on the 2D line-of-sight kinematics of simulated disc galaxies. The models under study belong to a family with varying initial gas fraction and halo triaxiality, plus few other control runs with different structural parameters; the kinematic information was extracted using the Voronoi-binning technique and parametrized up to the fourth order of a Gauss-Hermite series. Building on a previous work for the long-slit case, we investigate the 2D kinematic behaviour in the edge-on projection as a function of the boxy/peanut strength and position angle; we find that for the strongest structures the highest moments show characteristic features away from the mid-plane in a range of position angles. We also discuss the masking effect of a classical bulge and the ambiguity in discriminating kinematically this spherically symmetric component from a boxy/peanut bulge seen end-on. Regarding the face-on case, we extend existing results to encompass the effect of a second buckling and find that this phenomenon spurs an additional set of even deeper minima in the fourth moment. Finally, we show how the results evolve when inclining the disc away from perfectly edge-on and face-on. The behaviour of stars born during the course of the simulations is discussed and confronted to that of the pre-existing disc. The general aim of our study is providing a handle to identify boxy/peanut structures and their properties in latest generation Integral Field Unit observations of nearby disc galaxies.

Thermo-acousto-photonics for noncontact temperature measurement in silicon wafer processing

NASA Astrophysics Data System (ADS)

Suh, Chii-Der S.; Rabroker, G. Andrew; Chona, Ravinder; Burger, Christian P.

1999-10-01

A non-contact thermometry technique has been developed to characterize the thermal state of silicon wafers during rapid thermal processing. Information on thermal variations is obtained from the dispersion relations of the propagating waveguide mode excited in wafers using a non-contact, broadband optical system referred to as Thermal Acousto- Photonics for Non-Destructive Evaluation. Variations of thermo-mechanical properties in silicon wafers are correlated to temperature changes by performing simultaneous time-frequency analyses on Lamb waveforms acquired with a fiber-tip interferometer sensor. Experimental Lamb wave data collected for cases ranging from room temperature to 400 degrees C is presented. The results show that the temporal progressions of all spectral elements found in the fundamental antisymmetric mode are strong functions of temperature. This particular attribute is exploited to achieve a thermal resolution superior to the +/- 5 degrees C attainable through current pyrometric techniques. By analyzing the temperature-dependent group velocity of a specific frequency component over the temperature range considered and then comparing the results to an analytical model developed for silicon wafers undergoing annealing, excellent agreement was obtained. Presented results demonstrate the feasibility of applying laser-induced stress waves as a temperature diagnostic during rapid thermal processing.

The extended stellar substructures of four metal-poor globular clusters in the galactic bulge

NASA Astrophysics Data System (ADS)

Chun, Sang-Hyun; Sohn, Young-Jong

2015-08-01

We investigated stellar spatial density distribution around four metal-poor globular clusters (NGC 6266, NGC 6626, NGC 6642 and NGC 6723) in order to find extended stellar substructures. Wide-field deep J, H, and K imaging data were taken using the WFCAM near-infrared array on United Kingdom Infrared Telescope (UKIRT). The contamination of field stars around clusters was minimised by applying a statistical weighted filtering algorithm for the stars on the color-magnitude diagram. In two-dimensional isodensity contour map, we find that all four of the globular clusters shows tidal stripping stellar features in the form of tidal tails (NGC 6266 and NGC 6723) or small density lobes/chunk (NGC 6642 and NGC 6723). The stellar substructures extend toward the Galactic centre or anticancer, and the proper motion direction of the clusters. The radial density profiles of the clusters also depart from theoretical King and Wilson models and show overdensity feature with a break in a slope of profile at the outer region of clusters. The observed results indicate that four globular clusters in the Galactic bulge have experienced strong tidal force or bulge/disk shock effect of the Galaxy. These observational results provide us further constraints to understand the evolution of clusters in the Galactic bulge region as well as the formation of the Galaxy.

Method for wafer edge profile extraction using optical images obtained in edge defect inspection process

NASA Astrophysics Data System (ADS)

Okamoto, Hiroaki; Sakaguchi, Naoshi; Hayano, Fuminori

2010-03-01

It is becoming increasingly important to monitor wafer edge profiles in the immersion lithography era. A Nikon edge defect inspection tool acquires the circumferential optical images of the wafer edge during its inspection process. Nikon's unique illumination system and optics make it possible to then convert the brightness data of the captured images to quantifiable edge profile information. During this process the wafer's outer shape is also calculated. Test results show that even newly shipped bare wafers may not have a constant shape over 360 degree. In some cases repeated deformations with 90 degree pitch are observed.