30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.
Feng, Ning-Ning; Feng, Dazeng; Liao, Shirong; Wang, Xin; Dong, Po; Liang, Hong; Kung, Cheng-Chih; Qian, Wei; Fong, Joan; Shafiiha, Roshanak; Luo, Ying; Cunningham, Jack; Krishnamoorthy, Ashok V; Asghari, Mehdi
2011-04-11
We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate. © 2011 Optical Society of America
EML Array fabricated by SAG technique monolithically integrated with a buried ridge AWG multiplexer
NASA Astrophysics Data System (ADS)
Xu, Junjie; Liang, Song; Zhang, Zhike; An, Junming; Zhu, Hongliang; Wang, Wei
2017-06-01
We report the fabrication of a ten channel electroabsorption modulated DFB laser (EML) array. Different emission wavelengths of the laser array are obtained by selective area growth (SAG) technique, which is also used for the integration of electroabsorption modulators (EAM) with the lasers. An arrayed waveguide grating (AWG) combiner is integrated monolithically with the laser array by butt-joint regrowth (BJR) technique. A buried ridge waveguide structure is adopted for the AWG combiner. A self aligned fabrication procedure is adopted for the fabrication of the waveguide structure of the device to eliminate the misalignment between the laser active waveguide and the passive waveguide. A Ti thin film heater is integrated for each laser in the array. With the help of the heaters, ten laser emissions with 1.8 nm channel spacing are obtained. The integrated EAM has a larger than 11 dB static extinction ratios and larger than 8 GHz small signal modulation bandwidths. The light power collected in the output waveguide of the AWG is larger than -13 dBm for each wavelength.
Design and Development of a Package for a Diluted Waveguide Electro-Absorption Modulator
2008-11-01
the coupling efficiency. A design including mechanical, optical and RF elements was developed. A Newport Laser Welding system was utilized for...results, a design including mechanical, optical and RF elements was developed. A Newport Laser Welding system was utilized for fiber placement and...fixation. The laser welding techniques were customized in order to meet the needs of the EAM package design. Keywords: Electroabsorption
Wu, Tsu-Hsiu; Wu, Jui-pin; Chiu, Yi-Jen
2010-02-15
We propose and demonstrate, by proof of concept, a novel method of ultra-wide band (UWB) photonic generation using photodetection and cross-absorption modulation (XAM) of multiple quantum wells (MQW) in a single short-terminated electroabsorption modulator (SEAM). As an optical pump pulse excite the MQWs of SEAM waveguide, the probe light pulse with the same polarity can be generated through XAM, simultaneously creating photocurrent pulse propagating along the waveguide. Using the short termination of SEAM accompanied by the delayed microwave line, the photocurrent pulse can be reversed in polarity and re-modulated the waveguide, forming a monocycle UWB optical pulse. An 89 ps cycle of monocycle pulse with 114% fractional bandwidth is obtained, where the electrical power spectrum centered at 4 GHz of frequency ranges from 0.1 GHz to 8 GHz for -10 dB drops. Meanwhile, the generation processing is also confirmed by observing the same cycle of monocycle electrical pulse from the photodetection of SEAM. The whole optical processing is performed inside a compact semiconductor device, suggesting the optoelectronic integration template has a potential for the application of UWB photonic generation.
Electroabsorption optical modulator
Skogen, Erik J.
2017-11-21
An electroabsorption modulator incorporates waveguiding regions along the length of the modulator that include quantum wells where at least two of the regions have quantum wells with different bandgaps. In one embodiment of the invention, the regions are arranged such that the quantum wells have bandgaps with decreasing bandgap energy along the length of the modulator from the modulator's input to its output. The bandgap energy of the quantum wells may be decreased in discrete steps or continuously. Advantageously, such an arrangement better distributes the optical absorption as well as the carrier density along the length of the modulator. Further advantageously, the modulator may handle increased optical power as compared with prior art modulators of similar dimensions, which allows for improved link gain when the optical modulator is used in an analog optical communication link.
NASA Astrophysics Data System (ADS)
Betty, Ian Brian
2006-12-01
The development of strongly-guided InP/In1-x GaxAsyP 1-y based Mach-Zehnder optical modulators for 10Gb/s telecommunications is detailed. The modulators have insertion losses including coupling as low as 4.5dB, due to the incorporation of monolithically integrated optical mode spot-size converters (SSC's). The modulators are optimized to produce system performance that is independent of optical coupling alignment and for wavelength operation between 1525nm and 1565nm. A negatively chirped Mach-Zehnder modulator design is demonstrated, giving optimal dispersion-limited reach for 10Gb/s ON/OFF-keying modulation. It is shown that the optical system performance for this design can be determined from purely DC based optical measurements. A Mach-Zehnder modulator design invoking nearly no transient frequency shifts under intensity modulation is also presented, for the first time, using phase-shifter implementations based on the Quantum-Confined-Stark-Effect (QCSE). The performance impact on the modulator from the higher-order vertical and lateral waveguide modes found in strongly-guided waveguides has been determined. The impact of these higher-order modes has been minimized using the design of the waveguide bends, MMI structures, and doping profiles. The fabrication process and optical design for the spot-size mode converters are also thoroughly explored. The SSC structures are based on butt-joined vertically tapered passive waveguide cores within laterally flared strongly-guided ridges, making them compatible with any strong-guiding waveguide structure. The flexibility of the SSC process is demonstrated by the superior performance it has also enabled in a 40Gb/s electro-absorption modulator. The presented electro-absorption modulator has 3.6dB fiber-to-fiber insertion loss, polarization dependent loss (PDL) of only 0.3dB over 15dB extinction, and low absolute chirp (|alpha H| < 0.6) over the full dynamic range.
Vawter, G. Allen
2013-11-12
An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.
Skogen, Erik J [Albuquerque, NM; Tauke-Pedretti, Anna [Albuquerque, NM
2011-09-06
An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.
Waveguide-based electro-absorption modulator performance: comparative analysis
NASA Astrophysics Data System (ADS)
Amin, Rubab; Khurgin, Jacob B.; Sorger, Volker J.
2018-06-01
Electro-optic modulation is a key function for data communication. Given the vast amount of data handled, understanding the intricate physics and trade-offs of modulators on-chip allows revealing performance regimes not explored yet. Here we show a holistic performance analysis for waveguide-based electro-absorption modulators. Our approach centers around material properties revealing obtainable optical absorption leading to effective modal cross-section, and material broadening effects. Taken together both describe the modulator physical behavior entirely. We consider a plurality of material modulation classes to include two-level absorbers such as quantum dots, free carrier accumulation or depletion such as ITO or Silicon, two-dimensional electron gas in semiconductors such as quantum wells, Pauli blocking in Graphene, and excitons in two-dimensional atomic layered materials such as found in transition metal dichalcogendies. Our results show that reducing the modal area generally improves modulator performance defined by the amount of induced electrical charge, and hence the energy-per-bit function, required switching the signal. We find that broadening increases the amount of switching charge needed. While some material classes allow for reduced broadening such as quantum dots and 2-dimensional materials due to their reduced Coulomb screening leading to increased oscillator strengths, the sharpness of broadening is overshadowed by thermal effects independent of the material class. Further we find that plasmonics allows the switching charge and energy-per-bit function to be reduced by about one order of magnitude compared to bulk photonics. This analysis is aimed as a guide for the community to predict anticipated modulator performance based on both existing and emerging materials.
Wu, Zhongwei; Xu, Yin
2018-04-20
The hybrid plasmonic effect with lower loss and comparable light confinement than surface plasmon polariton opens new avenues for strengthening light-matter interactions with low loss. Here, we propose and numerically analyze a graphene-based electro-absorption modulator (EAM) with high-modulation efficiency and broad optical bandwidth using a dual-slot hybrid plasmonic waveguide (HPW), which consists of a central dual-slot HPW connected with two taper transitions and two additional dual-slot HPWs for coupling it with the input and output silicon nanowires, where graphene layers are located at the bottom and top side of the whole dual-slot HPW region. By combining the huge light enhancement effect of the dual-slot HPW and graphene's tunable conductivity, we obtain a high-modulation efficiency (ME) of 1.76 dB/μm for the graphene-based dual-slot HPW (higher ME of 2.19 dB/μm can also be obtained). Based upon this promising result, we further design a graphene-based hybrid plasmonic EAM, achieving a modulation depth (MD) of 15.95 dB and insertion loss of 1.89 dB @1.55 μm, respectively, in a total length of only 10 μm, where its bandwidth can reach over 500 nm for keeping MD>15 dB; MD can also be improved by slightly increasing the device length or shrinking the waveguide thickness, showing strong advantages for applying it into on-chip high-performance silicon modulators.
Skogen, Erik J [Albuquerque, NM; Raring, James [Goleta, CA; Tauke-Pedretti, Anna [Albuquerque, NM
2011-08-09
An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.
NASA Astrophysics Data System (ADS)
Kleinert, M.; Reinke, P.; Bach, H.-G.; Brinker, W.; Zawadzki, C.; Dietrich, A.; de Felipe, D.; Keil, N.; Schell, M.
2017-02-01
Graphene with its high carrier mobility as well as its tunable light absorption is an attractive active material for highspeed electro-absorption modulators (EAMs). Large-area CVD-grown graphene monolayers can be transferred onto arbitrary substrates to add active optoelectronic properties to intrinsically passive photonic integration platforms. In this work, we present graphene-based EAMs integrated in passive polymer waveguides. To facilitate modulation frequencies in the GHz range, a 50 Ω termination resistor as well as a DC blocking capacitor are integrated with graphene EAMs for the first time. Large signal data transmission experiments were carried out across the O, C and L optical communications bands. The fastest devices exhibit a 3-dB bandwidth of more than 4 GHz. Our analytical model of the modulation response for the graphene-based EAMs is in good agreement with the measurement results. It predicts that bandwidths greater than 50 GHz are possible with future device iterations. Owing to the absorption properties of the graphene layers, the devices are expected to be functional at smaller wavelengths of interest for optical interconnects and data-communications as well, offering a novel flexibility for the integration of high-speed functionalities in optoelectronic integrated circuits. Our work is the first step towards an Active Optical Printed Circuit Board, hiding the optics completely inside the board and thus removing entry barriers in manufacturing. We believe this will lead to the same success as observed in Active Optical Cables for short range optically wired connections.
Vawter, G Allen [Corrales, NM
2010-08-31
An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.
Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei
2018-02-03
CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.
NASA Astrophysics Data System (ADS)
Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei
2018-02-01
CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.
Skogen, Erik J.
2013-01-29
An optical set-reset (SR) latch is formed from a first electroabsorption modulator (EAM), a second EAM and a waveguide photodetector (PD) which are arranged in an optical and electrical feedback loop which controls the transmission of light through the first EAM to latch the first EAM in a light-transmissive state in response to a Set light input. A second waveguide PD controls the transmission of light through the second EAM and is used to switch the first EAM to a light-absorptive state in response to a Reset light input provided to the second waveguide PD. The optical SR latch, which may be formed on a III-V compound semiconductor substrate (e.g. an InP or a GaAs substrate) as a photonic integrated circuit (PIC), stores a bit of optical information and has an optical output for the logic state of that bit of information.
Vertical electro-absorption modulator design and its integration in a VCSEL
NASA Astrophysics Data System (ADS)
Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Thienpont, H.; Almuneau, G.; Panajotov, K.
2018-04-01
Electro-absorption modulators, either embedded in CMOS technology or integrated with a semiconductor laser, are of high interest for many applications such as optical communications, signal processing and 3D imaging. Recently, the integration of a surface-normal electro-absorption modulator into a vertical-cavity surface-emitting laser has been considered. In this paper we implement a simple quantum well electro-absorption model and design and optimize an asymmetric Fabry-Pérot semiconductor modulator while considering all physical properties within figures of merit. We also extend this model to account for the impact of temperature on the different parameters involved in the calculation of the absorption, such as refractive indices and exciton transition broadening. Two types of vertical modulator structures have been fabricated and experimentally characterized by reflectivity and photocurrent measurements demonstrating a very good agreement with our model. Finally, preliminary results of an electro-absorption modulator vertically integrated with a vertical-cavity surface-emitting laser device are presented, showing good modulation performances required for high speed communications.
NASA Astrophysics Data System (ADS)
Cho, Chun-Hyung; Kim, Jongseong; Sung, Hyuk-Kee
2016-09-01
We report on the enhancement of the static extinction ratio by using a dual-section distributed feedback laser diode integrated with an electro-absorption modulator. A directly- modulated dual-section laser can provide improved modulation performance under a low bias level ( i.e., below the threshold level) compared with a standard directly-modulated laser. By combining the extinction ratio from a dual-section laser with that from an electro-absorption modulator section, a total extinction ratio of 49.6. dB are successfully achieved.
InGaAlAs RW-based electro-absorption-modulated DFB-lasers for high-speed applications
NASA Astrophysics Data System (ADS)
Moehrle, Martin; Klein, Holger; Bornholdt, Carsten; Przyrembel, Georges; Sigmund, Ariane; Molzow, Wolf-Dietrich; Troppenz, Ute; Bach, Heinz-Gunter
2014-05-01
Electro-absorption modulated 10G and 25G DFB lasers (EML) are key components in transmission systems for long reach (up to 10 km) and extended reach (up to 80 km) applications. The next generation Ethernet will most likely be 400 Gb/s which will require components with even higher bandwidth. Commercially available EMLs are regarded as high-cost components due to their separate epitaxial butt-coupling growth process to separately optimize the DFB laser and the electro-absorption modulator (EAM). Alternatively the selective area growth (SAG) technique is used to achieve different MQW bandgaps in the DFB and EAM section of an EML. However for a lot of applications an emission wavelength within a narrow wavelength window is required enforcing a temperature controlled operation. All these applications can be covered with the developed EML devices that use a single InGaAlAs MQW waveguide for both the DFB and the EAM enabling a low-cost fabrication process similar to a conventional DFB laser diode. It will be shown that such devices can be used for 25Gb/s and 40Gb/s applications with excellent performance. By an additional monolithic integration of an impedance matching circuit the module fabrication costs can be reduced but also the modulation bandwidth of the devices can be further enhanced. Up to 70Gb/s modulation with excellent eye openings can be achieved. This novel approach opens the possibility for 100Gb/s NRZ EMLs and thus 4x100Gb/s NRZ EML-based transmitters in future. Also even higher bitrates seem feasible using more complex modulation formats such as e.g. DMT and PAM.
Integration of hybrid silicon lasers and electroabsorption modulators.
Sysak, Matthew N; Anthes, Joel O; Bowers, John E; Raday, Omri; Jones, Richard
2008-08-18
We present an integration platform based on quantum well intermixing for multi-section hybrid silicon lasers and electroabsorption modulators. As a demonstration of the technology, we have fabricated discrete sampled grating DBR lasers and sampled grating DBR lasers integrated with InGaAsP/InP electroabsorption modulators. The integrated sampled grating DBR laser-modulators use the as-grown III-V bandgap for optical gain, a 50 nm blue shifted bandgap for the electrabosprtion modulators, and an 80 nm blue shifted bandgap for low loss mirrors. Laser continuous wave operation up to 45 ?C is achieved with output power >1.0 mW and threshold current of <50 mA. The modulator bandwidth is >2GHz with 5 dB DC extinction.
Sub-micrometer epsilon-near-zero electroabsorption modulators enabled by high-mobility cadmium oxide
DOE Office of Scientific and Technical Information (OSTI.GOV)
Campione, Salvatore; Wood, Michael; Serkland, Darwin K.
Here, epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The non-resonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. In particular, we show that non-resonant electroabsorption modulators with sub-micron lengths and greater than 5 dB extinction ratios may be achievedmore » through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.« less
Sub-micrometer epsilon-near-zero electroabsorption modulators enabled by high-mobility cadmium oxide
Campione, Salvatore; Wood, Michael; Serkland, Darwin K.; ...
2017-07-06
Here, epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The non-resonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. In particular, we show that non-resonant electroabsorption modulators with sub-micron lengths and greater than 5 dB extinction ratios may be achievedmore » through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.« less
50 Gb/s hybrid silicon traveling-wave electroabsorption modulator.
Tang, Yongbo; Chen, Hui-Wen; Jain, Siddharth; Peters, Jonathan D; Westergren, Urban; Bowers, John E
2011-03-28
We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.
Electro-optic Modulation Using a DAST Single-crystal Film in a Fabry-Perot Cavity
NASA Astrophysics Data System (ADS)
Kutty, S. P.
2005-03-01
In this paper, we report a multiple-pass electro-optic modulator using a single- crystal film of 4'-dimethyamino-N-methyl-4-stilbazolium tosylate (DAST) placed inside a Fabry-Perot cavity. The single-crystal film was prepared using the modified shear method. Electro-optic modulation was achieved at 633 nm using field-induced birefringence in the cross polarized geometry including the Fabry-Perot cavity. The modulation due to the electro-optic effect was recorded as a function of phase while the phase was controlled by moving one of the mirrors in the cavity. The observed modulation was high (80 percent) for a low field (0.5V/micron) applied along the charge transfer axis on the film. Similar modulation using the Fabry-Perot cavity with a lower modulation depth was observed involving electroabsorption at 633 nm. Electroabsorption in the DAST film has been recently reported [1]. These are important results considering applications in photonics. [1] ``Electroabsorption in single-crystal film of a second-order optical material,'' R. K. Swamy, S. P. Kutty, J. Titus, S. Khatavkar, and M. Thakur, APL, Vol. 85, 4025, (2004).
Lin, Fang-Zheng; Wu, Tsu-Hsiu; Chiu, Yi-Jen
2009-06-08
A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch can be released to reduce the driving power of modulator. Such kind of monolithic integration scheme also has potential for the applications of other high-speed optoelectronics devices.
Kwon, Oh Kee; Han, Young Tak; Baek, Yong Soon; Chung, Yun C
2012-05-21
We present and demonstrate a simple and cost-effective technique for improving the modulation bandwidth of electroabsorption-modulated laser (EML). This technique utilizes the RF resonance caused by the EML chip (i.e., junction capacitance) and bonding wire (i.e, wire inductance). We analyze the effects of the lengths of the bonding wires on the frequency responses of EML by using an equivalent circuit model. To verify this analysis, we package a lumped EML chip on the sub-mount and measure its frequency responses. The results show that, by using the proposed technique, we can increase the modulation bandwidth of EML from ~16 GHz to ~28 GHz.
Short optical pulse generation at 40 GHz with a bulk electro-absorption modulator packaged device
NASA Astrophysics Data System (ADS)
Langlois, Patrick; Moore, Ronald; Prosyk, Kelvin; O'Keefe, Sean; Oosterom, Jill A.; Betty, Ian; Foster, Robert; Greenspan, Jonathan; Singh, Priti
2003-12-01
Short optical pulse generation at 40GHz and 1540nm wavelength is achieved using fully packaged bulk quaternary electro-absorption modulator modules. Experimental results obtained with broadband and narrowband optimized packaged modules are presented and compared against empirical model predictions. Pulse duty cycle, extinction ratio and chirp are studied as a function of sinusoidal drive voltage and detuning between operating wavelength and modulator absorption band edge. Design rules and performance trade-offs are discussed. Low-chirp pulses with a FWHM of ~12ps and sub-4ps at a rate of 40GHz are demonstrated. Optical time-domain demultiplexing of a 40GHz to a 10GHz pulse train is also demonstrated with better than 20dB extinction ratio.
Reflective electroabsorption modular for compact base station radio-over-fiber systems
NASA Astrophysics Data System (ADS)
Wu, Yang; Chang, Wei-Xi; Yu, Paul K. L.
2003-07-01
A Radio-over-Fiber system with simplified Base Station (BS) is proposed in which a single chip DBR Reflective Electro-absorption Modulator (REAM) serves both as an optical transceiver and as a mixer at the BS. It enables full duplex optical transmission for base band and RF band services simultaneously due to good isolation between uplink and downlink at the same chip. Grating structure is incorporated into the EA modulator for the sake of system design. It also improves yield and efficiency of high-speed devices.
Recent developments in electroabsorption modulators at Acreo Swedish ICT
NASA Astrophysics Data System (ADS)
Wang, Qin; Zhang, Andy Z.; Almqvist, Susanne; Junique, Stephane; Noharet, Bertrand; Platt, Duncan; Salter, Michael; Andersson, Jan Y.
2015-03-01
Three types of electroabsorption modulators (EAMs) based on III-V semiconductor multiple quantum wells (MQW) are presented in this work. One is a novel monolithic integration traveling-wave EAM for an analog optical transmitter/transceiver to achieve integrated photonic mm-wave functions for broadband connectivity. Another one is composed of an integrated EAM 1D array in a photonic beam-former as a Ku-band phased array antenna for seamless aeronautical networking through integration of data links, radios, and antennas. The third one addresses the use of MQW EAMs in free space optical links through biological tissue for transcutaneous communication.
High-speed Si/GeSi hetero-structure Electro Absorption Modulator.
Mastronardi, L; Banakar, M; Khokhar, A Z; Hattasan, N; Rutirawut, T; Bucio, T Domínguez; Grabska, K M; Littlejohns, C; Bazin, A; Mashanovich, G; Gardes, F Y
2018-03-19
The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
NASA Astrophysics Data System (ADS)
Swamy, R.; Vippa, P.; Rajagopalan, H.; Titus, J.; Thakur, M.; Sen, A.
2005-03-01
We report quadratic electro-optic effect and electroabsorption measurements in a novel nano-optical material based on the nonconjugated conductive polymer, iodine-doped poly(ethylenepyrrolediyl) derivative. Such effect has been recently reported in doped polyisoprene [1]. The measurement was made at 633 nm using field-induced birefringence. A modulation of 0.1% was observed for a field of 0.66 V/micron (film thickness 0.3 micron). The change in refractive index, δn, is 3.35x10-4 and the Kerr constant is 1.2x10-9 m/V^2 which is about 125 times that of nitrobenzene. Modulation due to electroabsorption was 0.05%. The exceptionally large electro-optic effect is most likely due to the specific structure and quantum confinement within a nanometer volume. In contrast, nonlinearity in a conjugated polymer is known to decrease upon iodine doping. [1] Thakur, Swamy and Titus, Macromolecules, Vol.37, 2677, (2004).
Zhu, Ning Hua; Zhang, Hong Guang; Man, Jiang Wei; Zhu, Hong Liang; Ke, Jian Hong; Liu, Yu; Wang, Xin; Yuan, Hai Qing; Xie, Liang; Wang, Wei
2009-11-23
This paper presents a new technique to generate microwave signal using an electro-absorption modulator (EAM) integrated with a distributed feedback (DFB) laser subject to optical injection. Experiments show that the frequency of the generated microwave can be tuned by changing the wavelength of the external laser or adjusting the bias voltage of the EAM. The frequency response of the EAM is studied and found to be unsmooth due to packaging parasitic effects and four-wave mixing effect occurring in the active layer of the DFB laser. It is also demonstrated that an EA modulator integrated in between two DFB lasers can be used instead of the EML under optical injection. This integrated chip can be used to realize a monolithically integrated tunable microwave source.
Gigahertz speed operation of epsilon-near-zero silicon photonic modulators
Wood, Michael G.; Campione, Salvatore; Parameswaran, S.; ...
2018-02-21
Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less
Gigahertz speed operation of epsilon-near-zero silicon photonic modulators
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wood, Michael G.; Campione, Salvatore; Parameswaran, S.
Opmore » tical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.« less
NASA Astrophysics Data System (ADS)
Zhou, Daibing; Zhang, Ruikang; Wang, Huitao; Wang, Baojun; Bian, Jing; An, Xin; Zhao, Lingjuan; Zhu, Hongliang; Ji, Chen; Wang, Wei
2014-11-01
Monolithically integrated electroabsorption modulated lasers (EML) are widely being used in the optical fiber communication systems, due to their low chip, compact size and good compatible with the current communication systems. In this paper, we investigated the effect of Zinc diffusion on extinction ratio of electroabsorption modulator (EAM) integrated with distributed feedback laser (DFB). EML was fabricated by selective area growth (SAG) technology. The MQW structure of different quantum energy levels was grown on n-type InP buffer layer with 150nm thick SiO2 parallel stripes mask by selective area metal-organic chemical vapor deposition (MOCVD). A 35nm photoluminescence wavelength variation was observed between the laser area (λPL=1535nm) and modulator area (λPL=1500nm) by adjusting the dimension of parallel stripes. The grating (λ=1550nm) was fabricated in the selective area. The device was mesa ridge structure, which was constituted of the DFB laser, isolation gap and modulator. The length of every part is 300μm, 50μm, and 150μm respectively. Two samples were fabricated with the same structure and different p-type Zn-doped concentration, the extinction ratio of heavy Zn-doped device is 12.5dB at -6V. In contrast, the extinction ratio of light Zn-doped device is 20dB at -6V, that was improved for approximate 60%. The different Zn diffusion depth into the MQW absorption layer was observed by Secondary ion mass spectrometer (SIMS). The heavy Zn-doped device diffused into absorption layer deeper than the light Zn-doped device, which caused the large non-uniformity of the electric field in the MQW layer. So the extinction ratio characteristics can be improved by optimizing the Zn-doped concentration of p-type layer.
2013-01-01
In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration. PMID:23388169
Electroabsorption-modulated widely tunable DBR laser transmitter for WDM-PONs.
Han, Liangshun; Liang, Song; Wang, Huitao; Qiao, Lijun; Xu, Junjie; Zhao, Lingjuan; Zhu, Hongliang; Wang, Baojun; Wang, Wei
2014-12-01
We present an InP based distributed Bragg reflector (DBR) laser transmitter which has a wide wavelength tuning range and a high chip output power for wavelength division multiplexing passive optical network (WDM-PON) applications. By butt-jointing InGaAsP with 1.45 µm emission wavelength as the material of the grating section, the laser wavelength can be tuned for over 13 nm by the DBR current. Accompanied by varying the chip temperature, the tuning range can be further enlarged to 16 nm. With the help of the integrated semiconductor optical amplifier (SOA), the largest chip output power is over 30 mW. The electroabsorption modulator (EAM) is integrated into the device by the selective-area growth (SAG) technique. The 3 dB small signal modulation bandwidth of the EAM is over 13 GHz. The device has both a simple tuning scheme and a simple fabrication procedure, making it suitable for low cost massive production which is desirable for WDM-PON uses.
1.55 µm high speed low chirp electroabsorption modulated laser arrays based on SAG scheme.
Cheng, Yuanbing; Wang, Qi Jie; Pan, Jiaoqing
2014-12-15
We demonstrate a cost-effective 1.55 µm low chirp 4 × 25 Gbit/s electroabsorption modulated laser (EML) array with 0.8 nm channel spacing by varying ridge width of the lasers and using selective area growth (SAG) integration scheme. The devices for all the 4 channels within the EML array show uniform threshold currents around 18 mA and high SMSRs over 45 dB. The output optical power of each channel is about 9 mW at an injection current of 100 mA. The typical chirp value of single EML measured by a fiber resonance method varied from 2.2 to -4 as the bias voltage was increased from 0 V to 2.5 V. These results show that the EML array is a suitable light source for 100 Gbit/s optical transmissions.
High-Q microwave photonic filter with a tuned modulator.
Capmany, J; Mora, J; Ortega, B; Pastor, D
2005-09-01
We propose the use of tuned electro-optic or electroabsorption external modulators to implement high-quality (high-Q) factor, single-bandpass photonic filters for microwave signals. Using this approach, we experimentally demonstrate a transversal finite impulse response with a Q factor of 237. This is to our knowledge the highest value ever reported for a passive finite impulse-response microwave photonic filter.
Ten-channel InP-based large-scale photonic integrated transmitter fabricated by SAG technology
NASA Astrophysics Data System (ADS)
Zhang, Can; Zhu, Hongliang; Liang, Song; Cui, Xiao; Wang, Huitao; Zhao, Lingjuan; Wang, Wei
2014-12-01
A 10-channel InP-based large-scale photonic integrated transmitter was fabricated by selective area growth (SAG) technology combined with butt-joint regrowth (BJR) technology. The SAG technology was utilized to fabricate the electroabsorption modulated distributed feedback (DFB) laser (EML) arrays at the same time. The design of coplanar electrodes for electroabsorption modulator (EAM) was used for the flip-chip bonding package. The lasing wavelength of DFB laser could be tuned by the integrated micro-heater to match the ITU grids, which only needs one electrode pad. The average output power of each channel is 250 μW with an injection current of 200 mA. The static extinction ratios of the EAMs for 10 channels tested are ranged from 15 to 27 dB with a reverse bias of 6 V. The frequencies of 3 dB bandwidth of the chip for each channel are around 14 GHz. The novel design and simple fabrication process show its enormous potential in reducing the cost of large-scale photonic integrated circuit (LS-PIC) transmitter with high chip yields.
Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser
NASA Astrophysics Data System (ADS)
Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.
2018-02-01
VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.
Waveguide Power-Amplifier Module for 80 to 150 GHz
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Weinreb, Sander; Peralta, Alejandro
2006-01-01
A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.
NASA Astrophysics Data System (ADS)
Fujisawa, Takeshi; Arai, Masakazu; Kano, Fumiyoshi
2010-05-01
Electroabsorption in highly strained GaInAs and GaInNAs quantum wells (QWs) grown on GaInAs or quasi-GaInAs substrates is investigated by using microscopic many-body theory. The effects of various parameters, such as strain, barrier height, substrate composition, and temperature are thoroughly examined. It is shown that the value of the absorption coefficient strongly depends on the depth of the QWs under large bias electric field due to the small overlap integral of wave functions between the conduction and valence bands. The use of GaInNAs QWs makes the strain in the well layer very small. Further, the effective quantum-well depth is increased in GaInNAs QWs due to the anticrossing interaction between the conduction and N-resonant bands, making it possible to obtain larger absorption coefficient under large bias electric fields without using wide-band gap materials for barriers.
Hybrid Silicon Photonic Integration using Quantum Well Intermixing
NASA Astrophysics Data System (ADS)
Jain, Siddharth R.
With the push for faster data transfer across all domains of telecommunication, optical interconnects are transitioning into shorter range applications such as in data centers and personal computing. Silicon photonics, with its economic advantages of leveraging well-established silicon manufacturing facilities, is considered the most promising approach to further scale down the cost and size of optical interconnects for chip-to-chip communication. Intrinsic properties of silicon however limit its ability to generate and modulate light, both of which are key to realizing on-chip optical data transfer. The hybrid silicon approach directly addresses this problem by using molecularly bonded III-V epitaxial layers on silicon for optical gain and absorption. This technology includes direct transfer of III-V wafer to a pre-patterned silicon-on-insulator wafer. Several discrete devices for light generation, modulation, amplification and detection have already been demonstrated on this platform. As in the case of electronics, multiple photonic elements can be integrated on a single chip to improve performance and functionality. However, scalable photonic integration requires the ability to control the bandgap for individual devices along with design changes to simplify fabrication. In the research presented here, quantum well intermixing is used as a technique to define multiple bandgaps for integration on the hybrid silicon platform. Implantation enhanced disordering is used to generate four bandgaps spread over 120+ nm. By combining these selectively intermixed III-V layers with pre-defined gratings and waveguides on silicon, we fabricate distributed feedback, distributed Bragg reflector, Fabry-Perot and mode-locked lasers along with photodetectors, electro-absorption modulators and other test structures, all on a single chip. We demonstrate a broadband laser source with continuous-wave operational lasers over a 200 nm bandwidth. Some of these lasers are integrated with modulators with a 3-dB bandwidth above 25 GHz, thus demonstrating coarse wavelength division multiplexing transmitter on silicon.
NASA Astrophysics Data System (ADS)
Mrejen, Michael; Suchowski, Haim; Bachelard, Nicolas; Wang, Yuan; Zhang, Xiang
2017-07-01
High-speed Silicon Photonics calls for solutions providing a small footprint, high density, and minimum crosstalk, as exemplified by the recent development of integrated optical modulators. Yet, the performances of such modulators are hindered by intrinsic material losses, which results in low energy efficiency. Using the concept of Adiabatic Elimination, here, we introduce a scheme allowing for the low-loss modulation in densely packed waveguides. Our system is composed of two waveguides, whose coupling is mediated by an intermediate third waveguide. The signal is carried by the two outer modes, while the active control of their coupling is achieved via the intermediate dark mode. The modulation is performed by the manipulation of the central-waveguide mode index, leaving the signal-carrying waveguides unaffected by the loss. We discuss how Adiabatic Elimination provides a solution for mitigating signal losses and designing relatively compact, broadband, and energy-efficient integrated optical modulators.
Tsang, Sai-Wing; Chen, Song; So, Franky
2013-05-07
Using charge modulated electroabsorption spectroscopy (CMEAS), for the first time, the energy level alignment of a polymer:fullerene bulk heterojunction photovoltaic cell is directly measured. The charge-transfer excitons generated by the sub-bandgap optical pumping are coupled with the modulating electric field and introduce subtle changes in optical absorption in the sub-bandgap region. This minimum required energy for sub-bandgap charge genreation is defined as the effective bandgap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
1993-01-31
interferometric modulator. 5 1-4 Bias point drift in interferometric modulators made using Ti-indiffused waveguides. Illumination was continuous; the gaps...In an interferometric modulator, illustrated in Figure 1-3, these waveguide changes affect the modu- lation performance. Different changes in total...modulator. 5 We have evaluated both straight waveguides and interferometric modulators. The majority of de- vices tested had 6-/m-wide Ti-indiffused
AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique
NASA Astrophysics Data System (ADS)
Deng, Qiufang; Guo, Lu; Liang, Song; Sun, Siwei; Xie, Xiao; Zhu, Hongliang; Wang, Wei
2018-04-01
AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of - 2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.
Dielectric waveguide gas-filled stark shift modulator
Hutchinson, Donald P.; Richards, Roger K.
2003-07-22
An optical modulator includes a dielectric waveguide for receiving an optical beam and coupling energy of the optical beam into the waveguide. At least one Stark material is provided in the waveguide. A bias circuit generates a bias signal to produce an electrical field across the Stark material to shift at least one of the Stark absorption frequencies towards the frequency of the optical beam. A circuit for producing a time varying electric field across the Stark material modulates the optical beam. At least a portion of the bias field can be generated by an alternating bias signal, such as a square wave. A method of modulating optical signals includes the steps of providing a dielectric waveguide for receiving an optical beam and coupling energy of the optical beam into the waveguide, the waveguide having at least one Stark material disposed therein, and varying an electric field imposed across the Stark material.
Particle-in-a-box model of exciton absorption and electroabsorption in conjugated polymers
NASA Astrophysics Data System (ADS)
Pedersen, Thomas G.
2000-12-01
The recently proposed particle-in-a-box model of one-dimensional excitons in conjugated polymers is applied in calculations of optical absorption and electroabsorption spectra. It is demonstrated that for polymers of long conjugation length a superposition of single exciton resonances produces a line shape characterized by a square-root singularity in agreement with experimental spectra near the absorption edge. The effects of finite conjugation length on both absorption and electroabsorption spectra are analyzed.
1975-11-15
2.8kA/cm for broad- area devices, has been achieved for Ga. In As, _ P /inP double-heterostructure 1 -x x 1 -y y diode lasers emitting ... LIGHT (b) reverse-biasing the p -n~ junction). This should facilitate the fabrication of modulators and switches using electroabsorption and...temperature operation of Ga In As, P /inP double-heterostructure (DH) diode lasers has been achieved. Broad-area devices emitting at 1.1
Atto-Joule, high-speed, low-loss plasmonic modulator based on adiabatic coupled waveguides
NASA Astrophysics Data System (ADS)
Dalir, Hamed; Mokhtari-Koushyar, Farzad; Zand, Iman; Heidari, Elham; Xu, Xiaochuan; Pan, Zeyu; Sun, Shuai; Amin, Rubab; Sorger, Volker J.; Chen, Ray T.
2018-05-01
In atomic multi-level systems, adiabatic elimination (AE) is a method used to minimize complicity of the system by eliminating irrelevant and strongly coupled levels by detuning them from one another. Such a three-level system, for instance, can be mapped onto physically in the form of a three-waveguide system. Actively detuning the coupling strength between the respective waveguide modes allows modulating light to propagate through the device, as proposed here. The outer waveguides act as an effective two-photonic-mode system similar to ground and excited states of a three-level atomic system, while the center waveguide is partially plasmonic. In AE regime, the amplitude of the middle waveguide oscillates much faster when compared to the outer waveguides leading to a vanishing field build up. As a result, the plasmonic intermediate waveguide becomes a "dark state," hence nearly zero decibel insertion loss is expected with modulation depth (extinction ratio) exceeding 25 dB. Here, the modulation mechanism relies on switching this waveguide system from a critical coupling regime to AE condition via electrostatically tuning the free-carrier concentration and hence the optical index of a thin indium thin oxide (ITO) layer resides in the plasmonic center waveguide. This alters the effective coupling length and the phase mismatching condition thus modulating in each of its outer waveguides. Our results also promise a power consumption as low as 49.74aJ/bit. Besides, we expected a modulation speed of 160 GHz reaching to millimeter wave range applications. Such anticipated performance is a direct result of both the unity-strong tunability of the plasmonic optical mode in conjunction with utilizing ultra-sensitive modal coupling between the critically coupled and the AE regimes. When taken together, this new class of modulators paves the way for next generation both for energy and speed conscience optical short-reach communication such as those found in interconnects.
Spatially Modulated Gain Waveguide Electro-Optic Laser
2013-08-09
1997, pp 1223-1226. 5. Y. Li, S. M. Goldwasser, P. Herczfeld, L.M. Narducci, "Dynamics of an electro-optically tunable microchip laser ", IEEE...TYPE Final 3. DATES COVERED (From 7/2/2010-5-10-2013 To) 4. TITLE AND SUBTITLE Spatially modulated gain waveguide electro-optic laser 5a...optical waveguides laser on LiNb03 substrate. The main goal of this work is to implement an active LiNb03 waveguide with the desired spatially modulated
Communication using VCSEL laser array
NASA Technical Reports Server (NTRS)
Goorjian, Peter M. (Inventor)
2008-01-01
Ultrafast directional beam switching, using coupled vertical cavity surface emitting lasers (VCSELs) is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and directional beam switching with angular differences of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches. A Mach-Zehnder interferometer, a Fabry-Perot etalon, or a semiconductor-based electro-absorption transmission channel, among others, can be used as a light modulator.
High-Power, High-Speed Electro-Optic Pockels Cell Modulator
NASA Technical Reports Server (NTRS)
Hawthorne, Justin; Battle, Philip
2013-01-01
Electro-optic modulators rely on a change in the index of refraction for the optical wave as a function of an applied voltage. The corresponding change in index acts to delay the wavefront in the waveguide. The goal of this work was to develop a high-speed, high-power waveguide- based modulator (phase and amplitude) and investigate its use as a pulse slicer. The key innovation in this effort is the use of potassium titanyl phosphate (KTP) waveguides, making the highpower, polarization-based waveguide amplitude modulator possible. Furthermore, because it is fabricated in KTP, the waveguide component will withstand high optical power and have a significantly higher RF modulation figure of merit (FOM) relative to lithium niobate. KTP waveguides support high-power TE and TM modes - a necessary requirement for polarization-based modulation as with a Pockels cell. High-power fiber laser development has greatly outpaced fiber-based modulators in terms of its maturity and specifications. The demand for high-performance nonlinear optical (NLO) devices in terms of power handling, efficiency, bandwidth, and useful wavelength range has driven the development of bulk NLO options, which are limited in their bandwidth, as well as waveguide based LN modulators, which are limited by their low optical damage threshold. Today, commercially available lithium niobate (LN) modulators are used for laser formatting; however, because of photorefractive damage that can reduce transmission and increase requirements on bias control, LN modulators cannot be used with powers over several mW, dependent on wavelength. The high-power, high-speed modulators proposed for development under this effort will enable advancements in several exciting fields including lidarbased remote sensing, atomic interferometry, free-space laser communications, and others.
NASA Astrophysics Data System (ADS)
Fuchs, Erica R. H.; Bruce, E. J.; Ram, R. J.; Kirchain, Randolph E.
2006-08-01
The monolithic integration of components holds promise to increase network functionality and reduce packaging expense. Integration also drives down yield due to manufacturing complexity and the compounding of failures across devices. Consensus is lacking on the economically preferred extent of integration. Previous studies on the cost feasibility of integration have used high-level estimation methods. This study instead focuses on accurate-to-industry detail, basing a process-based cost model of device manufacture on data collected from 20 firms across the optoelectronics supply chain. The model presented allows for the definition of process organization, including testing, as well as processing conditions, operational characteristics, and level of automation at each step. This study focuses on the cost implications of integration of a 1550-nm DFB laser with an electroabsorptive modulator on an InP platform. Results show the monolithically integrated design to be more cost competitive over discrete component options regardless of production scale. Dominant cost drivers are packaging, testing, and assembly. Leveraging the technical detail underlying model projections, component alignment, bonding, and metal-organic chemical vapor deposition (MOCVD) are identified as processes where technical improvements are most critical to lowering costs. Such results should encourage exploration of the cost advantages of further integration and focus cost-driven technology development.
Periodically modulated single-photon transport in one-dimensional waveguide
NASA Astrophysics Data System (ADS)
Li, Xingmin; Wei, L. F.
2018-03-01
Single-photon transport along a one-dimension waveguide interacting with a quantum system (e.g., two-level atom) is a very useful and meaningful simplified model of the waveguide-based optical quantum devices. Thus, how to modulate the transport of the photons in the waveguide structures by adjusting certain external parameters should be particularly important. In this paper, we discuss how such a modulation could be implemented by periodically driving the energy splitting of the interacting atom and the atom-photon coupling strength. By generalizing the well developed time-independent full quantum mechanical theory in real space to the time-dependent one, we show that various sideband-transmission phenomena could be observed. This means that, with these modulations the photon has certain probabilities to transmit through the scattering atom in the other energy sidebands. Inversely, by controlling the sideband transmission the periodic modulations of the single photon waveguide devices could be designed for the future optical quantum information processing applications.
NASA Astrophysics Data System (ADS)
Stampor, Waldemar; Mróz, Wojciech
2007-01-01
Electric-field modulated absorption (EA) spectra have been studied in solid films of triphenylamine (TPA)-based compounds, commonly used as hole-transporting materials in organic light-emitting diodes. The electroabsorption spectra of triphenyldiamine derivatives (TPD and TAPC) and a starburst amine dendrimer m-MTDATA are compared with those of TPA which is the building block of the molecules. The EA results indicate that properties of excited states of m-MTDATA and TAPC can be qualitatively rationalized in the terms of exciton interaction between TPA constituents. The lowest energy electronic excitations of m-MTDATA dendrimer are strongly delocalized within the area of the whole molecule. In contrast to m-MTDATA and TAPC, the TPD behavior in the electric field shows individual features that can not be derived from the optical properties of TPA monomers alone. The influence of excited state degeneracy on EA spectra is discussed. The consistent qualitative interpretation of EA spectra for compounds under investigation has been reached assuming that the second derivative lineshapes of EA signal originate from degenerate (in TPA and m-MTDATA) and possible quasi-degenerate states (in TAPC and TPD).
Enhancement and inhibition of light tunneling mediated by resonant mode conversion.
Kartashov, Yaroslav V; Vysloukh, Victor A; Torner, Lluis
2014-02-15
We show that the rate at which light tunnels between neighboring multimode waveguides can be drastically increased or reduced by the presence of small longitudinal periodic modulations of the waveguide properties that stimulate resonant conversion between the eigenmodes of each waveguide. Such a conversion, available only in multimode guiding structures, leads to periodic power transfer into higher-order modes, whose tails may considerably overlap with neighboring waveguides. As a result, the effective coupling constant for neighboring waveguides may change by several orders of magnitude upon small variations in the longitudinal modulation parameters.
Chong, W. Y.; Lim, W. H.; Yap, Y. K.; Lai, C. K.; De La Rue, R. M.; Ahmad, H.
2016-01-01
Increased absorption of transverse-magnetic (TM) - polarised light by a graphene-oxide (GO) coated polymer waveguide has been observed in the presence of transverse-electric (TE) - polarised light. The GO-coated waveguide exhibits very strong photo-absorption of TE-polarised light - and acts as a TM-pass waveguide polariser. The absorbed TE-polarised light causes a significant temperature increase in the GO film and induces thermal reduction of the GO, resulting in an increase in optical-frequency conductivity and consequently increased optical propagation loss. This behaviour in a GO-coated waveguide gives the action of an inverted optical switch/modulator. By varying the incident TE-polarised light power, a maximum modulation efficiency of 72% was measured, with application of an incident optical power level of 57 mW. The GO-coated waveguide was able to respond clearly to modulated TE-polarised light with a pulse duration of as little as 100 μs. In addition, no wavelength dependence was observed in the response of either the modulation (TE-polarised light) or the signal (TM-polarised light). PMID:27034015
An analog of photon-assisted tunneling in a periodically modulated waveguide array
Li, Liping; Luo, Xiaobing; Yang, Xiaoxue; Wang, Mei; Lü, Xinyou; Wu, Ying
2016-01-01
We theoretically report an analog of photon-assisted tunneling (PAT) originated from dark Floquet state in a periodically driven lattice array without a static biased potential by studying a three-channel waveguide system in a non-high-frequency regime. This analog of PAT can be achieved by only periodically modulating the top waveguide and adjusting the distance between the bottom and its adjacent waveguide. It is numerically shown that the PAT resonances also exist in the five-channel waveguide system and probably exist in the waveguide arrays with other odd numbers of waveguides, but they will become weak as the number of waveguides increases. With origin different from traditional PAT, this type of PAT found in our work is closely linked to the existence of the zero-energy (dark) Floquet states. It is readily observable under currently accessible experimental conditions and may be useful for controlling light propagation in waveguide arrays. PMID:27767189
FIBER OPTICS. ACOUSTOOPTICS: High-frequency magnetooptics of fiber waveguides
NASA Astrophysics Data System (ADS)
Antonov, S. N.; Bulyuk, A. N.; Vetoshko, P. M.; Shkerdin, G. N.
1990-07-01
An investigation is made of the hf distributed magnetooptic interaction in fiber waveguides associated with the Faraday effect observed under the conditions of both spatial and temporal phase matching between the normal modes of the waveguide and an external magentic field. Analytic expressions are obtained for the main relationships governing modulation of the state of polarization of light in a long fiber waveguide at high and ultrahigh frequencies. An analysis is made of several variants of hf magnetooptic modulators. It is shown that in the specific case when a 10-m long quartz fiber waveguide wound to form a cylindrical coil is placed inside the cavity of a coaxial microwave resonator and the microwave control power is 10 W, the efficiency of modulation of light should be 50%. The main theoretical predictions were supported by the reported experiments. These experiments showed that at a frequency of 80 MHz the modulation efficiency was 1% when the control power was 0.5 W.
Optical modulator including grapene
Liu, Ming; Yin, Xiaobo; Zhang, Xiang
2016-06-07
The present invention provides for a one or more layer graphene optical modulator. In a first exemplary embodiment the optical modulator includes an optical waveguide, a nanoscale oxide spacer adjacent to a working region of the waveguide, and a monolayer graphene sheet adjacent to the spacer. In a second exemplary embodiment, the optical modulator includes at least one pair of active media, where the pair includes an oxide spacer, a first monolayer graphene sheet adjacent to a first side of the spacer, and a second monolayer graphene sheet adjacent to a second side of the spacer, and at least one optical waveguide adjacent to the pair.
Low-chirp high-extinction-ratio modulator based on graphene-silicon waveguide.
Yang, Longzhi; Hu, Ting; Hao, Ran; Qiu, Chen; Xu, Chao; Yu, Hui; Xu, Yang; Jiang, Xiaoqing; Li, Yubo; Yang, Jianyi
2013-07-15
We present a hybrid graphene-silicon waveguide, which consists of a lateral slot waveguide with three layers of graphene flakes inside. Through a theoretical analysis, an effective index variation for about 0.05 is found in the waveguide by applying a voltage on the graphene. We designed a Mach-Zehnder modulator based on this waveguide and demonstrated it can process signals nearly chirp-free. The calculation shows that the driving voltage is only 1 V even if the length of the arm is shortened to be 43.54 μm. An extinction up to 34.7 dB and a minimum chirp parameter of -0.006 are obtained. Its insertion loss is roughly -1.37 dB. This modulator consumes low power and has a small footprint. It can potentially be ultrafast as well as CMOS compatible.
Tang, W W; Shu, C
2005-02-21
We demonstrate a regeneratively mode-locked optical pulse source at about 10 GHz using an optoelectronic oscillator constructed with an electro-absorption modulator integrated distributed feedback laser diode. The 10 GHz RF component is derived from the interaction between the pump wave and the backscattered, frequency-downshifted Stokes wave resulted from stimulated Brillouin scattering in an optical fiber. The component serves as a modulation source for the 1556 nm laser diode without the need for any electrical or optical RF filter to perform the frequency extraction. Dispersion-compensated fiber, dispersion-shifted fiber, and standard single-mode fiber have been used respectively to generate optical pulses at variable repetition rates.
Graphene-silicon phase modulators with gigahertz bandwidth
NASA Astrophysics Data System (ADS)
Sorianello, V.; Midrio, M.; Contestabile, G.; Asselberghs, I.; Van Campenhout, J.; Huyghebaert, C.; Goykhman, I.; Ott, A. K.; Ferrari, A. C.; Romagnoli, M.
2018-01-01
The modulator is a key component in optical communications. Several graphene-based amplitude modulators have been reported based on electro-absorption. However, graphene phase modulators (GPMs) are necessary for functions such as applying complex modulation formats or making switches or phased arrays. Here, we present a 10 Gb s-1 GPM integrated in a Mach-Zehnder interferometer configuration. This is a compact device based on a graphene-insulator-silicon capacitor, with a phase-shifter length of 300 μm and extinction ratio of 35 dB. The GPM has a modulation efficiency of 0.28 V cm at 1,550 nm. It has 5 GHz electro-optical bandwidth and operates at 10 Gb s-1 with 2 V peak-to-peak driving voltage in a push-pull configuration for binary transmission of a non-return-to-zero data stream over 50 km of single-mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy-efficient hybrid graphene-silicon modulators for telecom, datacom and other applications.
All-optical switch with two periodically modulated nonlinear waveguides.
Xie, Qiongtao; Luo, Xiaobing; Wu, Biao
2010-02-01
We propose a type of all-optical switch which consists of two periodically modulated nonlinear optical waveguides placed in parallel. Compared to the all-optical switch based on the traditional nonlinear directional coupler without periodic modulation, this all-optical switch has much lower switching threshold power and sharper switching width.
Integrated resonant micro-optical gyroscope and method of fabrication
Vawter, G Allen [Albuquerque, NM; Zubrzycki, Walter J [Sandia Park, NM; Guo, Junpeng [Albuquerque, NM; Sullivan, Charles T [Albuquerque, NM
2006-09-12
An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.
Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Chattopadhyay, Goutam; Pukala, David; Gaier, Todd; Soria, Mary; ManFung, King; Deal, William; Mei, Gerry; Radisic, Vesna; Lai, Richard
2009-01-01
To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).
Manipulation of a two-photon state in a χ(2)-modulated nonlinear waveguide array
NASA Astrophysics Data System (ADS)
Yang, Y.; Xu, P.; Lu, L. L.; Zhu, S. N.
2014-10-01
We propose to engineer the quantum state in a high-dimensional Hilbert space by taking advantage of a χ(2)-modulated nonlinear waveguide array. By varying the pump condition and the waveguide array length, the momentum correlation between the signal and idler photons can be manipulated, exhibiting bunching, antibunching, and the evolution between these two states, which are characterized by the Schmidt number. We find the Schmidt number is dependent on a structure parameter, namely the ratio of the array length and the number of channels pumped. By designing the linear profile waveguide array, the degree of spatial entanglement shows a periodic relationship with the slope of linear profile, during which a high degree of position-bunching state is suggested. The two-photon self-focusing effect is disclosed when the χ(2) modulation in the waveguide array contains a parabolic profile, which can be designed for efficient coupling between a waveguide array and fibers. These results shed light on a feasible way to achieve desirable quantum state on a single waveguide chip by a compact engineering of χ(2) and also suggest a degree of freedom for quantum walk and other related applications.
NASA Astrophysics Data System (ADS)
Ito, Yuka; Terada, Shinsuke; Arai, Shinya; Fujiwara, Makoto; Mori, Tetsuya; Choki, Koji; Fukushima, Takafumi; Koyanagi, Mitsumasa
2012-04-01
We proposed a rigid/flex optoelectronic (O/E) module with 48-channel polymeric waveguides for short-distance board-level optical interconnection. A flexible O/E test module was fabricated in the following two steps by using standard packaging processes. First, two vertical cavity surface emitting laser diodes (VCSELs) and one VCSEL driver (VD) were flip-chip bonded to a completed flexible printed circuit board (PCB), and two photodiodes (PDs) and one transimpedance amplifier/limiting amplifier (TIA/LA) to another flexible PCB. Second, the two flexible PCBs were attached with a polynorbornene (PNB) sheet in which high-density PNB waveguides were formed by UV exposure. Active areas of VCSELs and PDs on the flexible PCBs were aligned to micromirrors of the waveguides with -6 µm offset toward the signal propagation direction. We successfully demonstrated data transmission over 10 Gbps and low inter-channel crosstalk of less than -20 dB was achieved in the flexible O/E test module with 120-mm-long and 62.5-µm-pitch waveguides.
2014-01-01
Quadratic electro-optic effects (QEOEs) and electro-absorption (EA) process in a GaN/AlGaN spherical quantum dot are theoretically investigated. It is found that the magnitude and resonant position of third-order nonlinear optical susceptibility depend on the nanostructure size and aluminum mole fraction. With increase of the well width and barrier potential, quadratic electro-optic effect and electro-absorption process nonlinear susceptibilities are decreased and blueshifted. The results show that the DC Kerr effect in this case is much larger than that in the bulk case. Finally, it is observed that QEOEs and EA susceptibilities decrease and broaden with the decrease of relaxation time. PMID:24646318
NASA Astrophysics Data System (ADS)
Fu, Enjin
Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier injection modulators and light-emitting diodes (LED) with drive voltage requirements below 1.5V. Measurement results show an optical link based on a 70MHz red LED work well at 300Mbps by using the pre-emphasis driver module. A traveling wave electrode (TWE) modulator structure is presented, including a novel design methodology to address process limitations imposed by a commercial silicon fabrication technology. Results from 3D full wave EM simulation demonstrate the application of the design methodology to achieve specifications, including phase velocity matching, insertion loss, and impedance matching. Results show the HBT-based TWE-EAM system has the bandwidth higher than 60GHz.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Strassner, II, Bernd H.; Liedtke, Richard; McDonald, Jacob Jeremiah
The various technologies presented herein relate to utilizing a sealing layer of malleable material to seal gaps, etc., at a joint between edges of a waveguide channel formed in a first plate and a surface of a clamping plate. A compression pad is included in the surface of the clamping plate and is dimensioned such that the upper surface of the pad is less than the area of the waveguide channel opening on the first plate. The sealing layer is placed between the waveguide plate and the clamping plate, and during assembly of the waveguide module, the compression pad deformsmore » a portion of the sealing layer such that it ingresses into the waveguide channel opening. Deformation of the sealing layer results in the gaps, etc., to be filled, improving the operational integrity of the joint.« less
Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA.
Jeong, Jong Sool; Kim, Hyun-Soo; Choi, Byung-Seok; Kim, Dong Churl; Kim, Ki-Soo; Park, Mi-Ran; Kwon, O-Kyun
2012-11-19
We demonstrate a mitigation of Rayleigh back-scattering (RBS) impact in 10-Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA). The technique is based on the intensity-noise suppression of the centralized incoherent seed-light, which enables smooth evolution of deployed DWDM applications. We exhibit the power penalty of less than 1 dB at the large RBS crosstalk value of about 8 dB when the optical power of seed-light is lowered about -10 dBm.
NASA Astrophysics Data System (ADS)
Sun, Feiying; Xia, Liangping; Nie, Changbin; Shen, Jun; Zou, Yixuan; Cheng, Guiyu; Wu, Hao; Zhang, Yong; Wei, Dongshan; Yin, Shaoyun; Du, Chunlei
2018-04-01
All-optical modulators based on graphene show great promise for on-chip optical interconnects. However, the modulation performance of all-optical modulators is usually based on the interaction between graphene and the fiber, limiting their potential in high integration. Based on this point, an all-optical modulator in a dielectric-loaded waveguide (DLW) with a graphene-silicon heterojunction structure (GSH) is proposed. The DLW raises the waveguide mode, which provides a strong light-graphene interaction. Sufficient tuning of the graphene Fermi energy beyond the Pauli blocking effect is obtained with the presented GSH structure. Under the modulation light with a wavelength of 532 nm and a power of 60 mW, a modulation efficiency of 0.0275 dB µm-1 is achieved for light with a communication wavelength of 1.55 µm in the experiment. This modulator has the advantage of having a compact footprint, which may make it a candidate for achieving a highly integrated all-optical modulator.
Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions
NASA Technical Reports Server (NTRS)
Padmanabhan, Sharmila; Fung, King Man; Kangaslahti, Pekka P.; Peralta, Alejandro; Soria, Mary M.; Pukala, David M.; Sin, Seth; Samoska, Lorene A.; Sarkozy, Stephen; Lai, Richard
2012-01-01
Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.
Moustakas, Theodore D; Paiella, Roberto
2017-10-01
This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
NASA Astrophysics Data System (ADS)
Moustakas, Theodore D.; Paiella, Roberto
2017-10-01
This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.
Electro-optical phenomena based on ionic liquids in an optofluidic waveguide.
He, Xiaodong; Shao, Qunfeng; Cao, Pengfei; Kong, Weijie; Sun, Jiqian; Zhang, Xiaoping; Deng, Youquan
2015-03-07
An optofluidic waveguide with a simple two-terminal electrode geometry, when filled with an ionic liquid (IL), forms a lateral electric double-layer capacitor under a direct current (DC) electric field, which allows the realization of an extremely high carrier density in the vicinity of the electrode surface and terminals to modulate optical transmission at room temperature under low voltage operation (0 to 4 V). The unique electro-optical phenomenon of ILs was investigated at three wavelengths (663, 1330 and 1530 nm) using two waveguide geometries. Strong electro-optical modulations with different efficiencies were observed at the two near-infrared (NIR) wavelengths, while no detectable modulation was observed at 663 nm. The first waveguide geometry was used to investigate the position-dependent modulation along the waveguide; the strongest modulation was observed in the vicinity of the electrode terminal. The modulation phase is associated with the applied voltage polarity, which increases in the vicinity of the negative electrode and decreases at the positive electrode. The second waveguide geometry was used to improve the modulation efficiency. Meanwhile, the electro-optical modulations of seven ILs were compared at an applied voltage ranging from ±2 V to ±3.5 V. The results reveal that the modulation amplitude and response speed increase with increasing applied voltage, as well as the electrical conductivity of ILs. Despite the fact that the response speed isn't fast due to the high ionic density of ILs, the modulation amplitude can reach up to 6.0 dB when a higher voltage (U = ±3.5 V) is applied for the IL [Emim][BF4]. Finally, the physical explanation of the phenomenon was discussed. The effect of the change in IL structure on the electro-optical phenomena was investigated in another new experiment. The results reveal that the electro-optical phenomenon is probably caused mainly by the change in carrier concentration (ion redistribution near charged electrodes), which induces the enhancement and suppression of NIR optical absorption (contributed by C-H and N-H groups) in the vicinity of the negative electrode and positive electrode, respectively.
High voltage photo switch package module
Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E
2014-02-18
A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.
High Speed Terahertz Modulator on the Chip Based on Tunable Terahertz Slot Waveguide
Singh, P. K.; Sonkusale, S.
2017-01-01
This paper presents an on-chip device that can perform gigahertz-rate amplitude modulation and switching of broadband terahertz electromagnetic waves. The operation of the device is based on the interaction of confined THz waves in a novel slot waveguide with an electronically tunable two dimensional electron gas (2DEG) that controls the loss of the THz wave propagating through this waveguide. A prototype device is fabricated which shows THz intensity modulation of 96% at 0.25 THz carrier frequency with low insertion loss and device length as small as 100 microns. The demonstrated modulation cutoff frequency exceeds 14 GHz indicating potential for the high-speed modulation of terahertz waves. The entire device operates at room temperature with low drive voltage (<2 V) and zero DC power consumption. The device architecture has potential for realization of the next generation of on-chip modulators and switches at THz frequencies. PMID:28102306
NASA Astrophysics Data System (ADS)
Bukharin, Mikhail A.; Skryabin, Nikolay N.; Khudyakov, Dmitriy V.; Vartapetov, Sergey K.
2016-05-01
In the investigation we demonstrated technique of direct femtosecond laser writing of tracks with induced refractive index at record low depth under surface of lithium niobate (3-15 μm). It was shown that with the help of proposed technique one can be written claddings of near surface optical waveguides that plays a key role in fabrication of fast electro-optical modulators with low operating voltage. Fundamental problem resolved in the investigation consists in suppression of negative factors impeding femtosecond inscription of waveguides at low depths. To prevent optical breakdown of crystal surface we used high numerical aperture objectives for focusing of light. It was shown, that advanced heat accumulation regime of femtosecond inscription is inapplicable for writing of near-surface waveguides, and near the surface waveguides should be written in non-thermal regime in contrast to widespread femtosecond writing at depths of tens micrometers. Inscribed waveguides were examined for optical losses and polarization properties. It was experimentally shown, that femtosecond written near surface waveguides have such advantages over widely used proton exchanged and Ti-diffusion waveguides as lower optical losses (down to 0.3 dB/cm) and maintaining of all polarization states of propagation light, which is crucial for development of electro-optical modulators for broadband and ultrashort laser emission. Novelty of the results consists in technique of femtosecond inscription of waveguides at record low depths under the surface of crystals. As compared to previous investigations in the field (structures at depths near 50 um with buried electrodes), the obtained waveguides could be used with simple closely adjacent on-surface electrodes.
Polarization modulation based on the hybrid waveguide of graphene sandwiched structure
NASA Astrophysics Data System (ADS)
Yang, Junbo; Chen, Dingbo; Zhang, Jingjing; Zhang, Zhaojian; Huang, Jie
2017-09-01
Polarization beam splitter (PBS) plays an important role to realize beam control and modulation. A novel hybrid structure of graphene sandwiched waveguide is proposed to fulfill polarization manipulation and selection based on the refractive index engineering techniques. The fundamental mode of TM cannot be supported in this case. However, both TE and TM mode are excited and transmitting in the hybrid waveguide if the design parameters, including the waveguide width and the waveguide height, are changed. The incident wavelength largely affects the effective index, which results in supporting/not supporting the TM mode. The proposed design exhibits high extinction ratio, compact in size, flexible to control, compatible with CMOS process, and easy to be integrated with other optoelectronic devices, allowing it to be used in optical communication and optical information processing.
Optical modulation in silicon waveguides via charge state control of deep levels.
Logan, D F; Jessop, P E; Knights, A P; Wojcik, G; Goebel, A
2009-10-12
The control of defect mediated optical absorption at a wavelength of 1550 nm via charge state manipulation is demonstrated using optical absorption measurements of indium doped Silicon-On-Insulator (SOI) rib waveguides. These measurements introduce the potential for modulation of waveguide transmission by using the local depletion and injection of free-carriers to change deep-level occupancy. The extinction ratio and modulating speed are simulated for a proposed device structure. A 'normally-off' depletion modulator is described with an extinction coefficient limited to 5 dB/cm and switching speeds in excess of 1 GHz. For a carrier injection modulator a fourfold enhancement in extinction ratio is provided relative to free carrier absorption alone. This significant improvement in performance is achieved with negligible increase in driving power but slightly degraded switching speed.
Guided-Wave Optic Devices for Integrated Optic Information Processing.
1984-08-08
Modulation and switching of light waves in Yttrium iron garnet (YIG)- Gadolinium gallium garnet (GGG) waveguides using Farady rotation , and light...switch, an electrooptic analog-to-digital converter using a Fabry -Perot modula- tor array, and a noncollinear magnetooptic modulator using magnetostatic...data routing in electronic computer networks. ELECTROOPTIC ANALOG-TO-DIGITAL CONVERTER USING CHANNEL WAVEGUIDE FABRY -PEROT MODULATOR ARRAY One of the
113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array.
Vaernewyck, Renato; Bauwelinck, Johan; Yin, Xin; Pierco, Ramses; Verbrugghe, Jochen; Torfs, Guy; Li, Zhisheng; Qiu, Xing-Zhi; Vandewege, Jan; Cronin, Richard; Borghesani, Anna; Moodie, David
2013-01-14
This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5V(pp), the EAM driver array consumes only 2.2W or 220mW per channel, 50% below the state of the art. Both the output swing and bias are configurable between 1.5 and 3.0V(pp) and 0.75-2.15V respectively.
RF Photonic Technology in Optical Fiber Links
NASA Astrophysics Data System (ADS)
Chang, William S. C.
2007-06-01
List of contributors; Introduction and preface; 1. Figures of merit and performance analysis of photonic microwave links Charles Cox and William S. C. Chang; 2. RF subcarrier links in local access networks Xiaolin Lu; 3. Analog modulation of semiconductor lasers Joachim Piprek and John E. Bowers; 4. LiNbO3 external modulators and their use in high performance analog links Gary E. Betts; 5. Broadband traveling wave modulators in LiNbO3 Marta M. Howerton and William K. Burns; 6. Multiple quantum well electroabsorption modulators for RF photonic links William S. C. Chang; 7. Polymer modulators for RF photonics Timothy Van Eck; 8. Photodiodes for high performance analog links P. K. L. Yu and Ming C. Wu; 9. Opto-electronic oscillators X. Steve Yao; 10. Photonic link techniques for microwave frequency conversion Stephen A. Pappert, Roger Helkey and Ronald T. Logan Jr; 11. Antenna-coupled millimeter-wave electro-optical modulators William B. Bridges; 12. System design and performance of wideband photonic phased array antennas Greg L. Tangonan, Willie Ng, Daniel Yap and Ron Stephens; Acknowledgements; References; Index.
NASA Astrophysics Data System (ADS)
Andreev, V. M.; Davidyuk, N. Yu.; Ionova, E. A.; Rumyantsev, V. D.
2013-09-01
The parameters of the concentrating photoelectric modules with triple-junction (InGaP/GaAs/Ge) solar cells whose focusing system contains an original secondary optical element are studied. The element consists of a plane-convex lens in optical contact with the front surface of an intermediate glass plate and a cylindrical waveguide that is located on the rear side of the glass plate above the surface of the solar element. It is demonstrated that the structure of the secondary optical element provides a wide misorientation characteristic of the concentrator and the cylindrical waveguide allows a more uniform radiation density over the surface of the solar cell. The effect of chromatic aberration in the primary and secondary optical systems on the parameters of photoelectric modules is analyzed. It is demonstrated that the presence of waveguides with a length of 3-5 mm leads to effective redistribution of radiation over the surface of the solar cell whereas shorter and longer waveguides provide the local concentration of radiation at the center of the photodetecting area.
NASA Astrophysics Data System (ADS)
Geary, Kevin
The development of high-frequency polymer electro-optic modulators has seen steady and significant progress in recent years, yet applications of these promising materials to more complicated integrated optic structures and arrays of devices have been limited primarily due to high optical waveguide loss characteristics. This is unfortunate since a major advantage of polymers as photonic materials is their compatibility with photolithographic processing of large components. In this Dissertation, etchless waveguide writing techniques are presented in order to improve the overall optical insertion loss of electro-optic polymer waveguide devices. These techniques include poling-induced writing, stress-induced waveguide writing, and photobleaching. Using these waveguide writing mechanisms, we have demonstrated straight waveguides, phase modulators, Mach-Zehnder intensity modulators, variable optical attenuators, and multimode interference (MMI) power splitters, all with improved loss characteristics over their etched rib waveguide counterparts. Ultimately, the insertion loss of an integrated optic device is limited by the actual material loss of the core waveguide material. In this Dissertation, passive-to-active polymer waveguide transitions are proposed to circumvent this problem. These transitions are compact, in-plane, self-aligned, and require no tapering of any physical dimensions of the waveguides. By utilizing both the time-dependent and intensity-dependent photobleaching characteristics of electro-optic polymer materials, adiabatic refractive index tapers can be seamlessly coupled to in-plane butt couple transitions, resulting in losses as low as 0.1 dB per interface. By integrating passive polymer planar lightwave circuits with the high-speed phase shifting capability of electro-optic polymers, active wideband photonic devices of increased size and complexity can be realized. Optical fiber-to-device coupling can also result in significant contributions to the overall insertion loss of an integrated electro-optic polymer device. In this Dissertation, we leverage the photobleached refractive index taper component of our proposed passive-to-active polymer waveguide transitions in order to realize a two-dimensional optical mode transformer for improved overall fiber-to-device coupling of electro-optic polymer waveguide devices.
NASA Astrophysics Data System (ADS)
Nakama, Kenichi; Tokiwa, Yuu; Mikami, Osamu
2010-09-01
Intra-board interconnection between optical waveguide channels is suitable for assembling high-speed optoelectronic printed wiring boards (OE-PWB). Here, we propose a novel optical interconnection method combining techniques for both wavelength-based optical waveguide addressing and plug-in optical waveguide alignment with a micro-hole array (MHA). This array was fabricated by the mask transfer method. For waveguide addressing, we used a micro passive wavelength selector (MPWS) module, which is a type of Littrow mount monochromator consisting of an optical diffraction grating, a focusing lens, and the MHA. From the experimental results, we found that the wavelength addressing operation of the MPWS module was effective for intra-board optical interconnection.
Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators
DOE Office of Scientific and Technical Information (OSTI.GOV)
Qiu, Feng; Spring, Andrew M.; Sato, Hiromu
2015-09-21
Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less
NASA Astrophysics Data System (ADS)
Li, Xinying; Xiao, Jiangnan
2015-06-01
We propose a novel scheme for optical frequency-locked multi-carrier generation based on one electro-absorption modulated laser (EML) and one phase modulator (PM) in cascade driven by different sinusoidal radio-frequency (RF) clocks. The optimal operating zone for the cascaded EML and PM is found out based on theoretical analysis and numerical simulation. We experimentally demonstrate 25 optical subcarriers with frequency spacing of 12.5 GHz and power difference less than 5 dB can be generated based on the cascaded EML and PM operating in the optimal zone, which agrees well with the numerical simulation. We also experimentally demonstrate 28-Gbaud polarization division multiplexing quadrature phase shift keying (PDM-QPSK) modulated coherent optical transmission based on the cascaded EML and PM. The bit error ratio (BER) can be below the pre-forward-error-correction (pre-FEC) threshold of 3.8 × 10-3 after 80-km single-mode fiber-28 (SMF-28) transmission.
High-Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Colliders
NASA Astrophysics Data System (ADS)
Tantawi, Sami G.; Tamura, Fumihiko
2000-04-01
We describe the potential of semiconductor X-band RF switch arrays as a means of developing high power RF pulse compression systems for future linear colliders. The switch systems described here have two designs. Both designs consist of two 3dB hybrids and active modules. In the first design the module is composed of a cascaded active phase shifter. In the second design the module uses arrays of SPST (Single Pole Single Throw) switches. Each cascaded element of the phase shifter and the SPST switch has similar design. The active element consists of symmetrical three-port tee-junctions and an active waveguide window in the symmetrical arm of the tee-junction. The design methodology of the elements and the architecture of the whole switch system are presented. We describe the scaling law that governs the relation between power handling capability and number of elements. The design of the active waveguide window is presented. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of tens of megawatts at X-band.
NASA Astrophysics Data System (ADS)
Girouard, Peter D.
The microwave, optical, and electro-optic properties of epitaxial barium titanate thin films grown on (100) MgO substrates and photonic crystal electro-optic modulators fabricated on these films were investigated to demonstrate the applicability of these devices for telecommunication and data networks. The electrical and electro-optical properties were characterized up to modulation frequencies of 50 GHz, and the optical properties of photonic crystal waveguides were determined for wavelengths spanning the optical C band between 1500 and 1580 nm. Microwave scattering parameters were measured on coplanar stripline devices with electrode gap spacings between 5 and 12 mum on barium titanate films with thicknesses between 230 and 680 nm. The microwave index and device characteristic impedance were obtained from the measurements. Larger (lower) microwave indices (impedances) were obtained for devices with narrower electrode gap spacings and on thicker films. Thinner film devices have both lower index mismatch between the co-propagating microwave and optical signals and lower impedance mismatch to a 50O system, resulting in a larger predicted electro-optical 3 dB bandwidth. This was experimentally verified with electro-optical frequency response measurements. These observations were applied to demonstrate a record high 28 GHz electro-optic bandwidth measured for a BaTiO3 conventional ridge waveguide modulator having 1mm long electrodes and 12 mum gap spacing on a 260nm thick film. The half-wave voltage and electro-optic coefficients of barium titanate modulators were measured for films having thicknesses between 260 and 500 nm. The half-wave voltage was directly measured at low frequencies using a polarizer-sample-compensator-analyzer setup by over-driving waveguide integrated modulators beyond their linear response regime. Effective in-device electro-optic coefficients were obtained from the measured half-wave voltages. The effective electro-optic coefficients were found to increase with both applied electrical dc bias and with film thickness. A record low 0.39V ˙ cm (0.45V ˙ cm) voltage-length product was measured for barium titanate modulators operating at telecommunication wavelengths on a device with 5 ?m electrode gap spacing on a 500nm thick film modulated at a frequency of 100 Hz (1 MHz). This measured voltage-length product is more than a factor of 5 lower than that reported for state-of-the-art silicon conventional waveguide modulators. The electro-optical characterization of BaTiO3 films revealed a trade-off that exists for traveling wave BaTiO3 modulators: lower voltages are obtained in thicker film devices with narrow electrode gap spacing while larger bandwidths are obtained in thinner film devices with wider electrode gap spacing. These findings were supported by calculations of the film thickness dependent half-wave voltage and electro-optic bandwidth. In order to demonstrate modulators having simultaneously low voltage operation and high electro-optic bandwidth, photonic crystal waveguide modulators with large group index were investigated through theory and experiment. The theory for slow light phase delay in linear optical materials was extended for second order nonlinear optical materials. This theory was incorporated into a detailed model for predicting photonic crystal modulator performance in terms of voltage-length product and electro-optic bandwidth. Modeling shows that barium titanate photonic crystal modulators with sub-millimeter length, sub-volt operation, and greater than 40 GHz electro-optic bandwidth are achievable in a single device. Two types of photonic crystal waveguides (PC) on BaTiO3 films were designed, fabricated, and characterized: waveguides with hexagonal lattice symmetry and waveguides with hexagonal symmetry having a line defect oriented in the direction of light propagation. Excellent agreement was obtained between the simulated and measured transmission for hexagonal lattice PC waveguides. An extinction of 20 dB was measured across a 9.9 nm stop band edge, yielding a record large band edge sharpness of 2 dB/nm for all photonic crystal waveguides on ferroelectric films. A 12-fold enhancement of the electro-optic coefficient was measured via optical spectral analysis in a line defect BaTiO3 modulator, yielding an effective electro-optic coefficient of 900 pm/V in the photonic crystal region at a modulation frequency of 10 GHz. This enhancement was demonstrated over a 48 nm range, demonstrating the wideband operation of these devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Murray, E.; Floether, F. F.; Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single-photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to a SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO{sub 2} cladding. A tuneable Mach Zehnder interferometer (MZI) modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single-photon nature of the emission was verified using themore » on-chip MZI as a beamsplitter in a Hanbury Brown and Twiss measurement.« less
Time-reversing light pulses by adiabatic coupling modulation in coupled-resonator optical waveguides
NASA Astrophysics Data System (ADS)
Wang, Chao; Martini, Rainer; Search, Christopher P.
2012-12-01
We introduce a mechanism to time reverse short optical pulses in coupled resonator optical waveguides (CROWs) by direct modulation of the coupling coefficients between microresonators. The coupling modulation is achieved using phase modulation of a Mach-Zehnder interferometer coupler. We demonstrate that by adiabatic modulation of the coupling between resonators we can time reverse or store light pulses with bandwidths up to a few hundred GHz. The large pulse bandwidths, small device footprint, robustness with respect to resonator losses, and easy tuning process of the coupling coefficients make this method more practical than previous proposals.
NASA Astrophysics Data System (ADS)
Bykovskiĭ, Yu A.; Zheregi, V. G.; Kulchin, Yurii N.; Poryadin, Yu D.; Smirnov, V. L.; Fomichev, N. N.
1990-05-01
An investigation was made of a multichannel LiNbO3 waveguide modulator of light in space and time, suitable for processing of analog and digital signals. This modulator had 26 channels and the half-wave control voltage was 4.5 V. A theoretical analysis and an experimental study were made of the functional performance of this modulator depending on the channel interconnections and on the nature of the signals applied to the modulator. The feasibility of processing analog and digital signals was studied.
NASA Astrophysics Data System (ADS)
Sacher, Wesley David
Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the coupling efficiency-bandwidth product. Finally, we describe polarization rotator-splitters and controllers based on mode conversion between the fundamental transverse magnetic polarized mode and a high order transverse electric polarized mode in vertically asymmetric waveguides. We demonstrate the first polarization rotator-splitters and controllers that are fully compatible with standard active Si photonic platforms and extend the concept to our Si3N4-on-Si photonic platform.
SPM of nonlinear surface plasmon waveguides
NASA Astrophysics Data System (ADS)
Li, Yuee; Zhang, Xiaoping
2008-10-01
Pulse propagation equation of nonlinear dispersion surface plasmon waveguide is educed strictly from wave equation. The nonlinear coefficient is defined and then used to assess and compare the nonlinear characteristic of three popular 1-D surface plasmon waveguides: the single metal-dielectric interface, the metal slab bounded by dielectric and the dielectric slab bounded by metal. SPM (self-phase modulation) of the typical surface plasmon waveguide is predicted and discussed.
Novel multi-telescopes beam combiners for next generation instruments (FIRST/SUBARU)
NASA Astrophysics Data System (ADS)
Martin, G.; Pugnat, T.; Gardillou, F.; Cassagnettes, C.; Barbier, D.; Guyot, C.; Hauden, J.; Huby, E.; Lacour, S.
2016-07-01
Integrated optic devices are nowadays achieving extremely good performances in the field of astronomical interferometry, as shown by PIONIER or GRAVITY silica/silicon-based instruments, already installed at VLTI. In order to address other wavelengths, increase the number of apertures to be combined and eventually ensure on-chip phase modulation, we are working on a novel generation of beam combiners, based on the hybridization of glass waveguides, that can ensure very sharp bend radius, high confinement and low propagation losses, together with lithium niobate phase modulators and channel waveguides that can achieve on-chip, fast (<100kHz) phase modulation. The work presented here has been realized in collaboration with our technological partners TeemPhotonics for glass waveguides and iXBlue-PSD for lithium niobate phase modulators. We will present our results on a hybrid glass/niobate (passive/active) beam combiner that has been developed in the context of FIRST/SUBARU 9T beam combiner. The combiner is structured in three parts: a) the first stage (passive glass) achieves beam splitting from one input to eight outputs, and that for nine input fibers coming from the sub-apertures of the Subaru telescope; b) the second stage consists on a 72 channel waveguides lithium niobate phase modulator in a push-pull configuration that allows to modify on-chip the relative phase between the 36 pairs of waveguides; c) a final recombination system of Y-junctions (passive glass) that allows to obtain combination of each input to every other one. The aim of this presentation is to discuss different issues of the combiners, such as transmission, birefringence, half-wave voltage modulation and spectral range.
NASA Astrophysics Data System (ADS)
Maru, Koichi; Abe, Yukio; Uetsuka, Hisato
2008-10-01
We demonstrated a compact and low-loss athermal arrayed-waveguide grating (AWG) module utilizing silica-based planar lightwave circuit (PLC) technology. Spot-size converters based on a vertical ridge-waveguide taper were integrated with a 2.5%-Δ athermal AWG to reduce the loss at chip-to-fiber interface. Spot-size converters based on a segmented core were formed around resin-filled trenches for athermalization formed in the slab to reduce the diffraction loss at the trenches. A 16-channel athermal AWG module with 100-GHz channel spacing was fabricated. The use of a 2.5%-Δ athermal chip with a single-side fiber array enabled a compact package of the size of 41.6×16.6×4.5 mm3. Athermal characteristics and a small insertion loss of 3.5-3.8 dB were obtained by virtue of low fiber-to-chip coupling loss and athermalization with low excess loss.
NASA Astrophysics Data System (ADS)
Haas, Simon; Matsui, Hiroyuki; Hasegawa, Tatsuo
2010-10-01
We report pure electric-field effects on the excitonic absorbance of pentacene thin films as measured by unipolar field-effect devices that allowed us to separate the charge accumulation effects. The field-modulated spectra between 1.8 and 2.6 eV can be well fitted with the first derivative curve of Frenkel exciton absorption and its vibronic progression, and at higher energy a field-induced feature appears at around 2.95 eV. The results are in sharp contrast to the electroabsorption spectra reported by Sebastian in previous studies [Chem. Phys. 61, 125 (1981)10.1016/0301-0104(81)85055-0], and leads us to reconsider the excitonic structure including the location of charge-transfer excitons. Nonlinear π -electronic response is discussed based on second-order electro-optic (Kerr) spectra.
Metal-capped silicon organic micro-ring electro-optical modulator (Conference Presentation)
NASA Astrophysics Data System (ADS)
Zaki, Aya O.; Kirah, Khaled A.; Swillam, Mohamed A.
2017-02-01
An ultra-compact hybrid plasmonic waveguide ring electro-optical modulator is designed to be easily fabricated on silicon on insulator (SOI) substrates using standard silicon photonics technology. The proposed waveguide is based on a buried standard silicon waveguide of height 220 nm topped with polymer and metal. The key advantage of this novel design is that only the silicon layer of the waveguide is structured as a coupled ring resonator. Then, the device is covered with electro-optical polymer and metal in post processes with no need for lithography or accurate mask alignment techniques. The simple fabrication method imposes many design challenges to obtain a resonator of reasonable loaded quality factor and high extinction ratio. Here, the performance of the resonator is optimized in the telecom wavelength range around 1550 nm using 3D FDTD simulations. The design of the coupling junction between the access waveguide and the tightly bent ring is thoroughly studied. The extension of the metal over the coupling region is exploited to make the critical dimension of the design geometry at least 2.5 times larger than conventional plasmonic resonators and the design is thus more robust. In this paper, we demonstrate an electro-optical modulator that offers an insertion loss < 1 dB, a modulation depth of 12 dB for an applied peak to peak voltage of only 2 V and energy consumption of 1.74 fJ/bit. The performance is superior to previously reported hybrid plasmonic ring resonator based modulators while the design shows robustness and low fabrication cost.
Emerging technologies in Si active photonics
NASA Astrophysics Data System (ADS)
Wang, Xiaoxin; Liu, Jifeng
2018-06-01
Silicon photonics for synergistic electronic–photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro-optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronicSilicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key challenges for Si photonics to meet the requirement of high bandwidth and low power consumption in photonic datalinks. Here we review recent efforts and progress in high-performance active photonic devices on Si, focusing on emerging technologies beyond conventional foundry-ready Si photonics devices. For emerging laser sources, we will discuss recent progress towards efficient monolithic Ge lasers, mid-infrared GeSn lasers, and high-performance InAs quantum dot lasers on Si for data center applications in the near future. We will then review novel modulator materials and devices beyond the free carrier plasma dispersion effect in Si, including GeSi and graphene electro-absorption modulators and plasmonic-organic electro–optical modulators, to achieve ultralow power and high speed modulation. Finally, we discuss emerging photodetectors beyond epitaxial Ge p–i–n photodiodes, including GeSn mid-infrared photodetectors, all-Si plasmonic Schottky infrared photodetectors, and Si quanta image sensors for non-avalanche, low noise single photon detection and photon counting. These emerging technologies, though still under development, could make a significant impact on the future of large-scale electronic–photonic integration with performance inaccessible from conventional Si photonics technologies-photonic integration with performance inaccessible from conventional Si photonics technologies.
NASA Astrophysics Data System (ADS)
Liu, Ming; Yin, Xiaobo; Wang, Feng; Zhang, Xiang
2011-10-01
Data communications have been growing at a speed even faster than Moore's Law, with a 44-fold increase expected within the next 10 years. Data Transfer on such scale would have to recruit optical communication technology and inspire new designs of light sources, modulators, and photodetectors. An ideal optical modulator will require high modulation speed, small device footprint and large operating bandwidth. Silicon modulators based on free carrier plasma dispersion effect and compound semiconductors utilizing direct bandgap transition have seen rapid improvement over the past decade. One of the key limitations for using silicon as modulator material is its weak refractive index change, which limits the footprint of silicon Mach-Zehnder interferometer modulators to millimeters. Other approaches such as silicon microring modulators reduce the operation wavelength range to around 100 pm and are highly sensitive to typical fabrication tolerances and temperature fluctuations. Growing large, high quality wafers of compound semiconductors, and integrating them on silicon or other substrates is expensive, which also restricts their commercialization. In this work, we demonstrate that graphene can be used as the active media for electroabsorption modulators. By tuning the Fermi energy level of the graphene layer, we induced changes in the absorption coefficient of graphene at communication wavelength and achieve a modulation depth above 3 dB. This integrated device also has the potential of working at high speed.
Demonstration of an 8*10-Gb/s OTDM system
NASA Astrophysics Data System (ADS)
Huo, Li; Yang, Yanfu; Lou, Caiyun; Gao, Yizhi
2005-03-01
An 8*10 Gb/s optical time-division-multiplexing (OTDM) system was demonstrated with an electroabsorption modulator (EAM) based short pulse generator followed by a two-stage nonlinear compression scheme which generated stable 10-GHz, 2-ps full-width at half-maximum (FWHM) pulse train, an opto-electronic oscillator (OEO) that extracted 10-GHz clock with a timing jitter of 300 fs from 80-Gb/s OTDM signal and a self cascaded EAM which produced a switching window of about 10 ps. A back-to-back error free demultiplexing experiment with a power penalty of 3.25 dB was carried out to verify the system performance.
NASA Astrophysics Data System (ADS)
Belovolov, M. I.; Vitrik, O. B.; Dianov, Evgenii M.; Kulchin, Yurii N.; Obukh, V. F.
1989-11-01
An investigation was made of modulation of the phase and polarization of modes in a few-mode fiber waveguide subjected to axial deformation. The simplest and most convenient (for analysis) controlled interference pattern was obtained on addition, at the exit from a waveguide, of the fields of two modes of different order or of components of two orthogonally polarized waves of the same mode when an additional phase shift between these waves was induced by deformation. The two investigated schemes were suitable for the construction of simple and highly sensitive sensors capable of detecting small strains with characteristics which could be varied by suitable selection of the waveguide parameters and of the signal processing method.
NASA Astrophysics Data System (ADS)
Bai, Yang; Chen, Shufen; Fu, Li; Fang, Wei; Lu, Junjun
2005-01-01
A high bit rate more than 10Gbit/s optical pulse generation device is the key to achieving high-speed and broadband optical fiber communication network system .Now, we propose a novel high-speed optical transmission module(TM) consisting of a Ti:Er:LiNbO3 waveguide laser and a Mach-Zehnder-type encoding modulator on the same Er-doped substrate. According to the standard of ITU-T, we design the 10Gbit/ s transmission module at 1.53μm on the Z cut Y propagation LiNbO3 slice. A dynamic model and the corresponding numerical code are used to analyze the waveguide laser while the electrooptic effect to design the modulator. Meanwhile, the working principle, key technology, typical characteristic parameters of the module are given. The transmission module has a high extinction ratio and a low driving voltage, which supplies the efficient, miniaturized light source for wavelength division multiplexing(WDM) system. In additional, the relation of the laser gain with the cavity parameter, as well as the relation of the bandwidth of the electrooptic modulator with some key factors are discussed .The designed module structure is simulated by BPM software and HFSS software.
Ultrawide Shipboard Electrooptic Electromagnetic Environment Monitoring
1994-05-01
ridge-waveguide modulator has a device length of 300 fpm, a waveguide thickness of 0.4 pm, a device capacitance of 0.2 pF, and a r x- 0.7. For digital ...important noise sources identified. Particular attention will be paid to the performance characteristics of the optical modulator. For digital ...1.32 tM for digital as well as analog optical link applications. The operation of the FKE modulator was discussed in Section 2.1.2 of this report. At
Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Xuefeng
2014-12-15
A width-modulated silicon waveguide is proposed to realize non-degenerate phase sensitive optical parametric amplification. It is found that the relative phase at the input of the phase sensitive amplifier (PSA) θIn-PSA can be tuned by tailoring the width and length of the second segment of the width-modulated silicon waveguide, which will influence the gain in the parametric amplification process. The maximum gain of PSA is larger by 9 dB compared with the phase insensitive amplifier (PIA) gain, and the gain bandwidth of PSA is larger by 35 nm compared with the gain bandwidth of PIA. Our on-chip PSA can find important potential applications in highly integrated optical circuits for optical chip-to-chip communication and computers.
Optical waveguide device with an adiabatically-varying width
Watts,; Michael R. , Nielson; Gregory, N [Albuquerque, NM
2011-05-10
Optical waveguide devices are disclosed which utilize an optical waveguide having a waveguide bend therein with a width that varies adiabatically between a minimum value and a maximum value of the width. One or more connecting members can be attached to the waveguide bend near the maximum value of the width thereof to support the waveguide bend or to supply electrical power to an impurity-doped region located within the waveguide bend near the maximum value of the width. The impurity-doped region can form an electrical heater or a semiconductor junction which can be activated with a voltage to provide a variable optical path length in the optical waveguide. The optical waveguide devices can be used to form a tunable interferometer (e.g. a Mach-Zehnder interferometer) which can be used for optical modulation or switching. The optical waveguide devices can also be used to form an optical delay line.
Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz
NASA Technical Reports Server (NTRS)
Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd;
2010-01-01
In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems
Direct and Inverse Techniques of Guided-Mode Resonance Filters Designs
NASA Technical Reports Server (NTRS)
Tibuleac, Sorin; Magnusson, Robert; Maldonado, Theresa A.; Zuffada, Cinzia
1997-01-01
Guided-mode resonances arise in single or multilayer waveguides where one or more homogeneous layers are replaced by diffraction gratings (Fig. 1.) The diffractive element enables an electromagnetic wave incident on a waveguide grating to be coupled to the waveguide modes supportable by the structure in the absence of the modulation (i.e. the difference between the high and low dielectric constants of the grating) at specific values of the wavelength and incident angle. The periodic modulation of the guide makes the structure leaky, preventing sustained propagation of modes in the waveguide and coupling the waves out into the substrate and cover. As the wavelength is varied around resonance a rapid variation in the intensities of the external propagating waves occurs. By selecting a grating period small enough to eliminate the higher-order propagating waves, an increase in the zero-order intensities up to 100% can result. The pronounced frequency selectivity of guided-mode resonances in dielectric waveguide gratings can be applied to design high-efficiency reflection and transmission filters [1-3].
Broadband, Spectrally Flat, Graphene-based Terahertz Modulators.
Shi, Fenghua; Chen, Yihang; Han, Peng; Tassin, Philippe
2015-12-02
Advances in the efficient manipulation of terahertz waves are crucial for the further development of terahertz technology, promising applications in many diverse areas, such as biotechnology and spectroscopy, to name just a few. Due to its exceptional electronic and optical properties, graphene is a good candidate for terahertz electro-absorption modulators. However, graphene-based modulators demonstrated to date are limited in bandwidth due to Fabry-Perot oscillations in the modulators' substrate. Here, a novel method is demonstrated to design electrically controlled graphene-based modulators that can achieve broadband and spectrally flat modulation of terahertz beams. In our design, a graphene layer is sandwiched between a dielectric and a slightly doped substrate on a metal reflector. It is shown that the spectral dependence of the electric field intensity at the graphene layer can be dramatically modified by optimizing the structural parameters of the device. In this way, the electric field intensity can be spectrally flat and even compensate for the dispersion of the graphene conductivity, resulting in almost invariant absorption in a wide frequency range. Modulation depths up to 76% can be achieved within a fractional operational bandwidth of over 55%. It is expected that our modulator designs will enable the use of terahertz technology in applications requiring broadband operation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Sotillo, B.; Chiappini, A.; Bharadwaj, V.; Hadden, J. P.; Bosia, F.; Olivero, P.; Ferrari, M.; Ramponi, R.; Barclay, P. E.; Eaton, S. M.
2018-01-01
Understanding the physical mechanisms of the refractive index modulation induced by femtosecond laser writing is crucial for tailoring the properties of the resulting optical waveguides. In this work, we apply polarized Raman spectroscopy to study the origin of stress-induced waveguides in diamond, produced by femtosecond laser writing. The change in the refractive index induced by the femtosecond laser in the crystal is derived from the measured stress in the waveguides. The results help to explain the waveguide polarization sensitive guiding mechanism, as well as provide a technique for their optimization.
Silica/Electro-optic Polymer Optical Modulator for MMW Receiving (Preprint)
2014-05-01
radiation receiver with the use of a bowtie antenna . Waveguide design optimization is presented for a waveguide with an EO polymer core and silica/solgel...established. The bowtie antenna is simulated and shows a broadband response with a maximum at 5GHz and a 3dB-bandwidth of approximately 12GHz. A fiber...millimeter-wave (MMW) radiation receiver with the use of a bowtie antenna . Waveguide design optimization is presented for a waveguide with an EO polymer
Coupling control based on Adiabatic elimination for densely integrated nano-photonics
NASA Astrophysics Data System (ADS)
Mrejen, Michael; Suchowski, Haim; Hatakeyama, Taiki; Wu, Chihhui; Feng, Liang; O'Brien, Kevin; Wang, Yuan; Zhang, Xiang
2015-03-01
The ever growing need for energy-efficient and fast communications is driving the development of highly integrated photonic circuits where controlling light at the nanoscale becomes the most critical aspect of information transfer. Here we develop a unique scheme of adiabatic elimination (AE) modulation to actively control the coupling among waveguides for densely integrated photonics. Analogous to atomic systems, AE is achieved by applying a decomposition on a three waveguide coupler, where the two outer waveguides serve as an effective two-mode system with an effective coupling of Veff = [(V*13 + V*23V*12/Δβ12) (V13-V23V12/Δβ23) ]1/2,and the middle waveguide is the equivalent to the intermediate level `dark state'. We experimentally demonstrate the first all optical AE modulation and its ability to control the coupling between the two waveguides by manipulating the mode index of the decoupled middle one. In addition, we show that the strong modes interactions allowed at the nano-scale offer a unique configuration of zero-coupling between all the waveguides, a phenomena that paves the way for ultra-high density photonic integrated circuits where small footprint is of crucial importance.
Resonant Tunneling Quantum Well Integrated Optical Waveguide Modulator/ Switch
1994-07-01
time, which leads to the high speed operation. In this Phase I project, POC designed the RTDBQW device, including the optimization and precise definition...Effect of Free Carriers ............ 7 3.0 CHANNEL WAVEGUIDE DESIGN AND OPTIMIZATION ................... 10 3.1 Design Of Directional Coupling Mach...are essential for high speed signal routing and regeneration. POC’s design relies on the integration of an optical guided wave switch/modulator with a
A cost-effective 25-Gb/s EML TOSA using all-in-one FPCB wiring and metal optical bench.
Han, Young-Tak; Kwon, Oh-Kee; Lee, Dong-Hun; Lee, Chul-Wook; Leem, Young-Ahn; Shin, Jang-Uk; Park, Sang-Ho; Baek, Yongsoon
2013-11-04
We present a cost-effective 25-Gb/s electro-absorption modulator integrated laser (EML) transmitter optical sub-assembly (TOSA) using all-in-one flexible printed circuit board (FPCB) wiring and a metal optical bench (MOB). For a low cost and high bandwidth TOSA, internal and external wirings and feed-through of the TOSA to transmit radio-frequency (RF) signal are configured all-in-one using the FPCB. The FPCB is extended from an exterior of the TOSA package up to an EML chip inside the package through the slit formed on a rear sidewall of the package and die-bonded on the MOB. The EML TOSA shows a modulated output power of more than 3.5 dBm and a clear eye pattern with a dynamic extinction ratio of ~8.4 dB at a data rate of 25.78 Gb/s.
Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers
NASA Astrophysics Data System (ADS)
Barton, Jonathon S.; Skogen, Erik J.; Masanovic, Milan L.; Raring, James; Sysak, Matt N.; Johansson, Leif; DenBaars, Steven P.; Coldren, Larry A.
2003-07-01
The Sampled-Grating Distributed-Bragg-Reflector laser(SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network reconfigurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple bandgaps along the device structure. These epitaxial "platforms" provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated electro-absorption modulators.
Numerical model of the polymer electro-optic waveguide
NASA Astrophysics Data System (ADS)
Fan, Guofang; Li, Yuan; Han, Bing; Wang, Qi; Liu, Xinhou; Zhen, Zhen
2012-09-01
A numerical design model is presented for the polymer waveguide in an electro-optic modulator. The effective index method is used to analyze the height of the core waveguide and rib waveguide, an improved Marcatili method is presented to design the rib waveguide width in order to keep the strong single mode operation and have a good match with the standard fiber. Also, the thickness of the upper cladding layer is discussed through calculating the effective index of the multilayer planar waveguide structure has been obtained by setting the optical loss due to the metallic absorption to an acceptable value (<0.1 dB/cm). As a consequence, we take the EO polymer waveguide structure of UV15:CLD/APC:UFC170 as an example, an optimized design is reported.
A 10-Gbit/s EML link using detuned narrowband optical filtering.
Ebrahimi, P; Jones, R; Wang, Y; Yan, L; Mader, T; Paniccia, M; Willner, A E; Paraschis, L
2007-08-20
In this paper, the effects of asymmetric narrowband optical filtering are investigated in a 10-Gbit/s optical communication link using integrated electro-absorption modulated lasers (EML). We investigate the effect of EML chirp on link performance as well as the optimal filter bandwidth and wavelength detuning. We show that both the phase response and the spectral narrowing of the filter will enable a longer distance transmission by interacting with the EML transient chirp and compensating for the fiber chromatic dispersion. Experimentally, an 8.75-GHz filter is shown to improve the link distance by 40 km from 65 to 105 km, when transmitting over standard single mode fiber.
Ring-resonator-integrated tunable external cavity laser employing EAM and SOA.
Yoon, Ki-Hong; Kwon, O-Kyun; Kim, Ki Soo; Choi, Byung-Seok; Oh, Su Hwan; Kim, Hyun Su; Sim, Jae-Sik; Kim, Chul Soo
2011-12-05
We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.
Nanophotonic Devices in Silicon for Nonlinear Optics
2010-10-15
record performance Demonstration of world‟s lowest loss slot waveguides, made in a DOD-trusted foundry (BAE Systems) Design study showing...highly-cited design study. Design study on analog links using the above modulators. Demonstration of the first silicon waveguides for the mid...Hochberg. Design of transmission line driven slot waveguide Mach-Zehnder interferometers and application to analog optical links. Optics Express 2010
Cross-phase modulation-induced spectral broadening in silicon waveguides.
Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Schröder, Jochen; Eggleton, Benjamin J
2016-01-11
We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.
Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides.
Choi, Ju Won; Chen, George F R; Ng, D K T; Ooi, Kelvin J A; Tan, Dawn T H
2016-06-08
CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra - silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W(-1)/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two - fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms.
Dry-film polymer waveguide for silicon photonics chip packaging.
Hsu, Hsiang-Han; Nakagawa, Shigeru
2014-09-22
Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.
Scanned Image Projection System Employing Intermediate Image Plane
NASA Technical Reports Server (NTRS)
DeJong, Christian Dean (Inventor); Hudman, Joshua M. (Inventor)
2014-01-01
In imaging system, a spatial light modulator is configured to produce images by scanning a plurality light beams. A first optical element is configured to cause the plurality of light beams to converge along an optical path defined between the first optical element and the spatial light modulator. A second optical element is disposed between the spatial light modulator and a waveguide. The first optical element and the spatial light modulator are arranged such that an image plane is created between the spatial light modulator and the second optical element. The second optical element is configured to collect the diverging light from the image plane and collimate it. The second optical element then delivers the collimated light to a pupil at an input of the waveguide.
All-optical intensity modulation based on graphene-coated microfibre waveguides
NASA Astrophysics Data System (ADS)
Wang, Ruiduo; Li, Diao; Jiang, Man; Wu, Hao; Xu, Xiang; Ren, Zhaoyu
2018-03-01
We investigate graphene-covered microfibre (GCM) waveguides, and analyse the microfibres' evanescent field distributions in different diameters and lengths by numerically simulation. According to the simulation results, we designed a graphene-based all-optical modulator using 980 nm and Amplified Spontaneous Emission (ASE) lasers, employing the microfibre's evanescent field induced light-graphene interaction. We studied the modulation effect that is influenced by the microfibre's diameter, number of graphene layers, and effective graphene length. Compared to a single graphene layer of shorter length, the double graphene layer with longer length presents stronger absorption and higher modulation depth. Using a 2- μm diameter microfibre covered by ∼0.3 cm double graphene sheets, we achieved a modulation depth of 8.45 dB. This modulator features ease of fabrication, low cost, and a controllable modulation depth.
NASA Technical Reports Server (NTRS)
Cook, Anthony; McNeil, Shirley; Switzer, Gregg; Battle, Philip
2010-01-01
Precise laser remote sensing of aerosol extinction and backscatter in the atmosphere requires a high-power, pulsed, frequency doubled Nd:YAG laser that is wavelength- stabilized to a narrow absorption line such as found in iodine vapor. One method for precise wavelength control is to injection seed the Nd:YAG laser with a low-power CW laser that is stabilized by frequency converting a fraction of the beam to 532 nm, and to actively frequency-lock it to an iodine vapor absorption line. While the feasibility of this approach has been demonstrated using bulk optics in NASA Langley s Airborne High Spectral Resolution Lidar (HSRL) program, an ideal, lower cost solution is to develop an all-waveguide, frequency-locked seed laser in a compact, robust package that will withstand the temperature, shock, and vibration levels associated with airborne and space-based remote sensing platforms. A key technology leading to this miniaturization is the integration of an efficient waveguide frequency doubling element, and a low-voltage phase modulation element into a single, monolithic, planar light-wave circuit (PLC). The PLC concept advances NASA's future lidar systems due to its compact, efficient and reliable design, thus enabling use on small aircraft and satellites. The immediate application for this technology is targeted for NASA Langley's HSRL system for aerosol and cloud characterization. This Phase I effort proposes the development of a potassium titanyl phosphate (KTP) waveguide phase modulator for future integration into a PLC. For this innovation, the proposed device is the integration of a waveguide-based frequency doubler and phase modulator in a single, fiber pigtail device that will be capable of efficient second harmonic generation of 1,064-nm light and subsequent phase modulation of the 532 nm light at 250 MHz, providing a properly spectrally formatted beam for HSRL s seed laser locking system. Fabrication of the integrated PLC chip for NASA Langley, planned for the Phase II effort, will require full integration and optimization of the waveguide components (SHG waveguide, splitters, and phase modulator) onto a single, monolithic device. The PLC will greatly reduce the size and weight, improve electrical- to-optical efficiency, and significantly reduce the cost of NASA Langley s current stabilized HSRL seed laser system built around a commercial off-the-shelf seed laser that is free-space coupled to a bulk doubler and bulk phase modulator.
Backplane photonic interconnect modules with optical jumpers
NASA Astrophysics Data System (ADS)
Glebov, Alexei L.; Lee, Michael G.; Yokouchi, Kishio
2005-03-01
Prototypes of optical interconnect (OI) modules for backplane applications are presented. The transceivers attached to the linecards E/O convert the signals that are passed to and from the backplane by optical jumpers terminated with MTP-type connectors. The connectors plug into adaptors attached to the backplane and the microlens arrays mounted in the adaptors couple the light between the fibers and waveguides. Planar polymer channel waveguides with 30-50 μm cross-sections route the optical signals across the board with propagation losses as low as 0.05 dB/cm @ 850 nm. The 45¦-tapered integrated micromirrors reflect the light in and out of the waveguide plane with the loss of 0.8 dB per mirror. The connector displacement measurements indicate that the adaptor lateral assembly accuracy can be at least +/-10 μm for the excess loss not exceeding 1 dB. Insertion losses of the test modules with integrated waveguides, 45¦ mirrors, and pluggable optical jumper connectors are about 5 dB. Eye diagrams at 10.7 Gb/s have typical width and height of 70 ps and 400 mV, respectively, and jitter of about 20 ps.
Sakamaki, Yohei; Shikama, Kota; Ikuma, Yuichiro; Suzuki, Kenya
2017-08-21
We propose a waveguide frontend with integrated polarization diversity optics for a wavelength selective switch (WSS) array with a liquid crystal on silicon switching engine to simplify the free space optics configuration and the alignment process in optical modules. The polarization diversity function is realized by the integration of a waveguide-type polarization beam splitter and a polarization rotating half-wave plate in a beam launcher using silica-based planar lightwave circuit technology. We confirmed experimentally the feasibility of using our proposed waveguide frontend in a two-in-one 1 × 20 WSS. The experimental results show that the fabricated waveguide frontend provides a polarization diversity function without any degradation in optical performance.
Power-Amplifier Module for 145 to 165 GHz
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Peralta, Alejandro
2007-01-01
A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.
Micrometer size polarization independent depletion-type photonic modulator in Silicon On Insulator
NASA Astrophysics Data System (ADS)
Gardes, F. Y.; Tsakmakidis, K. L.; Thomson, D.; Reed, G. T.; Mashanovich, G. Z.; Hess, O.; Avitabile, D.
2007-04-01
The trend in silicon photonics, in the last few years has been to reduce waveguide size to obtain maximum gain in the real estate of devices as well as to increase the performance of active devices. Using different methods for the modulation, optical modulators in silicon have seen their bandwidth increased to reach multi GHz frequencies. In order to simplify fabrication, one requirement for a waveguide, as well as for a modulator, is to retain polarisation independence in any state of operation and to be as small as possible. In this paper we provide a way to obtain polarization independence and improve the efficiency of an optical modulator using a V-shaped pn junction base on the natural etch angle of silicon, 54.7 deg. This modulator is compared to a flat junction depletion type modulator of the same size and doping concentration.
Ultrafast modulators based on nonlinear photonic crystal waveguides
NASA Astrophysics Data System (ADS)
Liu, Zhifu; Li, Jianheng; Tu, Yongming; Ho, Seng-Tiong; Wessels, Bruce W.
2011-03-01
Nonlinear photonic crystal (PhC) waveguides are being developed for ultrafast modulators. To enable phase velocity matching we have investigated one- and two-dimensional structures. Photonic crystal (PhC) waveguides based on epitaxial barium titanate (BTO) thin film in a Si3N4/BTO/MgO multilayer structure were fabricated by electron beam lithography or focused ion beam (FIB) milling. For both one- and two-dimensional PhCs, simulation shows that sufficient refractive index contrast is achieved to form a stop band. For one-dimensional Bragg reflector, we measured its slow light properties and the group refractive index of optical wave. For a millimeter long waveguide a 27 nm wide stop band was obtained at 1550 nm. A slowing of the light was observed, the group refractive indices at the mid band gap and at the band edges were estimated to be between 8.0 and 12 for the transverse electric (TE) mode, and 6.9 and 13 for the transverse magnetic (TM) mode. For TE optical modes, the enhancement factor of EO coefficient ranges from 7 to 13, and for the TM mode, the factor ranges from 5.9 to 15. Measurements indicate that near velocity phase matching can be realized. Upon realizing the phase velocity matching condition, devices with a small foot print with bandwidths at 490 GHz can be attained. Two-dimensional PhC crystal with a hexagonal lattice was also investigated. The PhCs were fabricated from epitaxial BTO thin film multilayers using focused ion beam milling. The PhCs are based on BTO slab waveguide and air hole arrays defined within Si3N4 and BTO thin films. A refractive index contrast of 0.4 between the barium titanate thin film multilayers and the air holes enables strong light confinement. For the TE optical mode, the hexagonal photonic crystal lattice with a diameter of 155 nm and a lattice constant of 740 nm yields a photonic bandgap over the wavelength range from 1525 to 1575 nm. The transmission spectrum of the PhC waveguide exhibits stronger Fabry Perot resonance compared to that of conventional waveguide. Measured transmission spectra show a bandgap in the ΓM direction in the reciprocal lattice that is in agreement with the simulated results using the finite-difference time-domain (FDTD) method. Compared to polarization intensity EO modulator with a half-wave voltage length product of 4.7 V•mm. The PhC based EO modulator has a factor of 6.6 improvement in the figure of merit performance. The thin film PhC waveguide devices show considerable potential for ultra-wide bandwidth electro-optic modulators as well as tunable optical filters and switches.
Silicon single mode waveguide modulator based upon switchable Bragg reflector
NASA Astrophysics Data System (ADS)
Azogui, Jonathan; Ramon, Yonathan; Businaro, Luca; Ciasca, Gabriele; Gerardino, Annamaria; Zalevsky, Zeev
2018-02-01
In this paper we present the development of an electro optical "Bragg" modulator for telecommunication, in both design and fabrication. The device consists from a regular single mode silicon waveguide (WG) in which an effective Bragg reflector is "turned on" within the WG by means of external bias, due to the plasma dispersion effect, in which the (complexed) refractive index is affected by carrier concentration within the Silicon. Three different strategies are presented for both design and fabrication.
Zhang, Lu; Hong, Xuezhi; Pang, Xiaodan; Ozolins, Oskars; Udalcovs, Aleksejs; Schatz, Richard; Guo, Changjian; Zhang, Junwei; Nordwall, Fredrik; Engenhardt, Klaus M; Westergren, Urban; Popov, Sergei; Jacobsen, Gunnar; Xiao, Shilin; Hu, Weisheng; Chen, Jiajia
2018-01-15
We experimentally demonstrate the transmission of a 200 Gbit/s discrete multitone (DMT) at the soft forward error correction limit in an intensity-modulation direct-detection system with a single C-band packaged distributed feedback laser and traveling-wave electro absorption modulator (DFB-TWEAM), digital-to-analog converter and photodiode. The bit-power loaded DMT signal is transmitted over 1.6 km standard single-mode fiber with a net rate of 166.7 Gbit/s, achieving an effective electrical spectrum efficiency of 4.93 bit/s/Hz. Meanwhile, net rates of 174.2 Gbit/s and 179.5 Gbit/s are also demonstrated over 0.8 km SSMF and in an optical back-to-back case, respectively. The feature of the packaged DFB-TWEAM is presented. The nonlinearity-aware digital signal processing algorithm for channel equalization is mathematically described, which improves the signal-to-noise ratio up to 3.5 dB.
Planar polymer and glass graded index waveguides for data center applications
NASA Astrophysics Data System (ADS)
Pitwon, Richard; Yamauchi, Akira; Brusberg, Lars; Wang, Kai; Ishigure, Takaaki; Schröder, Henning; Neitz, Marcel; Worrall, Alex
2016-03-01
Embedded optical waveguide technology for optical printed circuit boards (OPCBs) has advanced considerably over the past decade both in terms of materials and achievable waveguide structures. Two distinct classes of planar graded index multimode waveguide have recently emerged based on polymer and glass materials. We report on the suitability of graded index polymer waveguides, fabricated using the Mosquito method, and graded index glass waveguides, fabricated using ion diffusion on thin glass foils, for deployment within future data center environments as part of an optically disaggregated architecture. To this end, we first characterize the wavelength dependent performance of different waveguide types to assess their suitability with respect to two dominant emerging multimode transceiver classes based on directly modulated 850 nm VCSELs and 1310 silicon photonics devices. Furthermore we connect the different waveguide types into an optically disaggregated data storage system and characterize their performance with respect to different common high speed data protocols used at the intra and inter rack level including 10 Gb Ethernet and Serial Attached SCSI.
FIBER AND INTEGRATED OPTICS: Magnetooptic interaction in fiber waveguides
NASA Astrophysics Data System (ADS)
Antonov, S. N.; Bulyuk, A. N.; Gulyaev, Yurii V.
1989-11-01
Theoretical and experimental studies were made of the effects of a distributed magnetooptic interaction in fiber waveguides. Analytic solutions were obtained for relating light modulation at the exit of a waveguide to the parameters of its winding in the form of a coil and to an external magnetic field under conditions ensuring the exact spatial phase matching. It was confirmed experimentally that the interaction length of the order of several tens of meters was quite acceptable and could ensure a sensitivity of at least 10 - 4 Oe in the case of a quartz fiber waveguide.
Label-free silicon photonic biosensor system with integrated detector array.
Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L
2009-08-07
An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.
Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides
Choi, Ju Won; Chen, George F. R.; Ng, D. K. T.; Ooi, Kelvin J. A.; Tan, Dawn T. H.
2016-01-01
CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W−1/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two – fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558
Flexible integration of free-standing nanowires into silicon photonics.
Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin
2017-06-14
Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.
NASA Technical Reports Server (NTRS)
Abou-Khousa, M. A.
2009-01-01
A novel modulated slot design has been proposed and tested. The proposed slot is aimed to replace the inefficient small dipoles used in conventional MST-based imaging systems. The developed slot is very attractive as MST array element due to its small size and high efficiency/modulation depth. In fact, the developed slot has been successfully used to implement the first prototype of a microwave camera operating at 24 GHZ. It is also being used in the design of the second generation of the camera. Finally, the designed elliptical slot can be used as an electronically controlled waveguide iris for many other purposes (for instance in constructing waveguide reflective phase shifters and multiplexers/switches).
Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator.
Shambat, Gary; Ellis, Bryan; Mayer, Marie A; Majumdar, Arka; Haller, Eugene E; Vučković, Jelena
2011-04-11
We demonstrate a gallium arsenide photonic crystal cavity injection-based electro-optic modulator coupled to a fiber taper waveguide. The fiber taper serves as a convenient and tunable waveguide for cavity coupling with minimal loss. Localized electrical injection of carriers into the cavity region via a laterally doped p-i-n diode combined with the small mode volume of the cavity enable ultra-low energy modulation at sub-fJ/bit levels. Speeds of up to 1 GHz are demonstrated with photoluminescence lifetime measurements revealing that the ultimate limit goes well into the tens of GHz. © 2011 Optical Society of America
Integrated optic vector-matrix multiplier
Watts, Michael R [Albuquerque, NM
2011-09-27
A vector-matrix multiplier is disclosed which uses N different wavelengths of light that are modulated with amplitudes representing elements of an N.times.1 vector and combined to form an input wavelength-division multiplexed (WDM) light stream. The input WDM light stream is split into N streamlets from which each wavelength of the light is individually coupled out and modulated for a second time using an input signal representing elements of an M.times.N matrix, and is then coupled into an output waveguide for each streamlet to form an output WDM light stream which is detected to generate a product of the vector and matrix. The vector-matrix multiplier can be formed as an integrated optical circuit using either waveguide amplitude modulators or ring resonator amplitude modulators.
Advanced infrared laser modulator development
NASA Technical Reports Server (NTRS)
Cheo, P. K.; Wagner, R.; Gilden, M.
1984-01-01
A parametric study was conducted to develop an electrooptic waveguide modulator for generating continuous tunable sideband power from an infrared CO2 laser. Parameters included were the waveguide configurations, microstrip dimensions device impedance, and effective dielectric constants. An optimum infrared laser modulator was established and was fabricated. This modulator represents the state-of-the-art integrated optical device, which has a three-dimensional topology to accommodate three lambda/4 step transformers for microwave impedance matching at both the input and output terminals. A flat frequency response of the device over 20 HGz or = 3 dB) was achieved. Maximum single sideband to carrier power greater than 1.2% for 20 W microwave input power at optical carrier wavelength of 10.6 microns was obtained.
Quadratic electroabsorption studies of molecular motion in dye-doped polymers
NASA Astrophysics Data System (ADS)
Poga, Constantina; Kuzyk, Mark G.; Dirk, Carl W.
1993-02-01
This paper reports on quadratic electroabsorption studies of thin-film solid solutions of squarylium dye molecules in poly(methylmethacrylate) polymer with the aim of understanding the role of electronic and reorientational mechanisms in the third-order nonlinear-optical susceptibility. We present a generalized theory of the quadratic electrooptic response that includes both electronic mechanisms and molecular reorientation and show that the ratio of two independent third-order susceptibility tensor components, namely (chi) (3)3333/(chi) (3)1133, determines the relative contribution of each mechanism. Based on these theoretical results, we have designed and built an experiment that determines this ratio as a function of temperature and wavelength. Results show that at room temperature and near the first electronic transition wavelength, the response is dominated by the electronic mechanism, and that the reorientational contribution dominates when the sample is heated above its glass transition temperature. Furthermore, results show that, off-resonance, the sign of the imaginary part of the third-order susceptibility is positive. Quadratic electroabsorption is thus shown to be a versatile tool for measuring the imaginary part of the third-order nonlinear-optical susceptibility which yields information about the interaction of polymer and dopant molecule.
NASA Astrophysics Data System (ADS)
Poga, C.; Brown, T. M.; Kuzyk, M. G.; Dirk, Carl W.
1995-04-01
We apply quadratic electroabsorption spectroscopy (QES) to thin-film solid solutions of squarylium dye molecules in poly(methyl methacrylate) polymer to study the dye's electronic excited states and to investigate the importance of these states with regard to their contribution to the third-order nonlinear-optical susceptibility. We first show that the room-temperature tensor ratio a= chi (3)3333/ chi (3)1133 \\approximately 3 throughout most of the visible region to establish that the electronic mechanism dominates. Because QES is a third-order nonlinear-optical susceptibility measurement, it can be used to identify two photon states. By obtaining good agreement between the quadratic electroabsorption spectrum and a three level model, we conclude that there are two dominant states that contribute to the near-resonant and a two-photon state that are separated by less than 0.2 eV in energy. QES is thus shown to be a versatile tool for measuring the nature of excited states in a molecule. Furthermore, by applying a Kramers-Kronig transformation to determine the real part of the response, we are able to assess the two-photon all-optical device figure of merit of these materials. Such an
NASA Astrophysics Data System (ADS)
Jiang, Ming-Hui; Wang, Xi-Bin; Xu, Qiang; Li, Ming; Niu, Dong-Hai; Sun, Xiao-Qiang; Wang, Fei; Li, Zhi-Yong; Zhang, Da-Ming
2018-01-01
Nonlinear optical (NLO) polymer is a promising material for active waveguide devices that can provide large bandwidth and high-speed response time. However, the performance of the active devices is not only related to the waveguide materials, but also related to the waveguide and electrode structures. In this paper, a high-speed Mach-Zehnder interferometer (MZI) type of electro-optic (EO) switch based on NLO polymer-clad waveguide was fabricated. The quasi-in-plane coplanar waveguide electrodes were also introduced to enhance the poling and modulating efficiency. The characteristic parameters of the waveguide and electrode were carefully designed and simulated. The switches were fabricated by the conventional micro-fabrication process. Under 1550-nm operating wavelength, a typical fabricated switch showed a low insertion loss of 10.2 dB, and the switching rise time and fall time were 55.58 and 57.98 ns, respectively. The proposed waveguide and electrode structures could be developed into other active EO devices and also used as the component in the polymer-based large-scale photonic integrated circuit.
Simultaneous chromatic dispersion, polarization-mode-dispersion and OSNR monitoring at 40Gbit/s.
Baker-Meflah, Lamia; Thomsen, Benn; Mitchell, John; Bayvel, Polina
2008-09-29
A novel method for independent and simultaneous monitoring of chromatic dispersion (CD), first-order PMD and OSNR in 40Gbit/s systems is proposed and demonstrated. This is performed using in-band tone monitoring of 5GHz, optically down-converted to a low intermediate-frequency (IF) of 10kHz. The measurement provides a large monitoring range with good accuracies for CD (4742+/-100ps/nm), differential group delay (DGD) (200+/-4ps) and OSNR (23+/-1dB), independently of the bit-rate. In addition, the use of electro-absorption modulators (EAM) for the simultaneous down-conversion of all channels and the use of low-speed detectors makes it cost effective for multi-channel operation.
Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications
NASA Astrophysics Data System (ADS)
Driscoll, Jeffrey B.
Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields are shown to contribute no time-averaged momentum. Furthermore, the vectoral modal components, in conjunction with the tensoral nature of the third-order susceptibility of Si, lead to nonlinear properties which are dependent on waveguide orientation with respect to the Si parent crystal and the construction of the modal electric field components. This consideration is used to maximize effective nonlinearity and realize nonlinear Kerr gratings along specific waveguide trajectories. Tight optical confinement leads to a natural enhancement of the intrinsically large effective nonlinearty of Si waveguides, and in fact, the effective nonlinearty can be made to be almost 106 times greater in Si waveguides than that of standard single-mode fiber. Such a large nonlinearity motivates chip-scale all-optical signal processing techniques. Wavelength conversion by both four-wave-mixing (FWM) and cross-phase-modulation (XPM) will be discussed, including a technique that allows for enhanced broadband discrete FWM over arbitrary spectral spans by modulating both the linear and nonlinear waveguide properties through periodic changes in waveguide geometry. This quasi-phase-matching approach has very real applications towards connecting mature telecom sources detectors and components to other spectral regimes, including the mid-IR. Other signal processing techniques such as all-optical modulation format conversion via XPM will also be discussed. This thesis will conclude by looking at ways to extend the bandwidth capacity of Si waveguide interconnects on chip. As the number of processing cores continues to scale as a means for computational performance gains, on-chip link capacity will become an increasingly important issue. Metallic traces have severe limitations and are envisioned to eventually bow to integrated photonic links. The aggregate bandwidth supported by a single waveguide link will therefore become a crucial consideration as integrated photonics approaches the CPU. One way to increase aggregate bandwidth is to utilize different eigen-modes of a multimode waveguide, and integrated waveguide mode-muxes and demuxes for achieving simultaneous mode-division-multiplexing and wavelength-division-multiplexing will be demonstrated.
NASA Astrophysics Data System (ADS)
Rymanov, Vitaly; Tekin, Tolga; Stöhr, Andreas
2012-03-01
High data rate photonic wireless systems operating at millimeter wave carrier frequencies are considered as a disruptive technology e.g. for reach extension in optical access networks and for mobile backhauling. Recently, we demonstrated 60 GHz photonic wireless systems with record data rates up to 27 Gbit/s. Because of the oxygen absorption at 60 GHz, it is beneficial for fixed wireless systems with spans exceeding 1 km to operate at even higher frequencies. Here, the recently regulated 10 GHz bandwidth within the E-band (60-90 GHz) is of particular interest, covering the 71-76 GHz and 81-86 GHz allocations for multi-gigabit wireless transmission. For this purpose, wideband waveguide photodetectors with high external quantum efficiency are required. Here, we report on double mushroom 1.55 μm waveguide photodetectors for integration in an E-band wireless transmitter module. The developed photodetector consists of a partially p-doped, partly non-intentionally doped absorbing layer centered in a mushroom-type optical waveguide, overcoming the compromise between the junction capacitance and the series resistance. For efficient fiber-chip coupling, a second mushroom-type passive optical waveguide is used. In contrast to the conventional shallow ridge waveguide approach, the mushroom-type passive waveguide allows to shift the center of the optical mode further away from the top surface, thus reducing waveguide losses due to the surface roughness. Experimentally, a very flat frequency response with a deviation up to +/-1 dB in the entire E-band has been found together with an output power level of -15.7 dBm at 10 mA photocurrent and at a frequency of 73 GHz.
NASA Astrophysics Data System (ADS)
Weiss, J. R. M.; Lamprecht, T.; Meier, N.; Dangel, R.; Horst, F.; Jubin, D.; Beyeler, R.; Offrein, B. J.
2010-02-01
We report on the co-packaging of electrical CMOS transceiver and VCSEL chip arrays on a flexible electrical substrate with optical polymer waveguides. The electro-optical components are attached to the substrate edge and butt-coupled to the waveguides. Electrically conductive silver-ink connects them to the substrate at an angle of 90°. The final assembly contacts the surface of a package laminate with an integrated compressible connector. The module can be folded to save space, requires only a small footprint on the package laminate and provides short electrical high-speed signal paths. With our approach, the electro-optical package becomes a compact electro-optical module with integrated polymer waveguides terminated with either optical connectors (e.g., at the card edge) or with an identical assembly for a second processor on the board. Consequently, no costly subassemblies and connectors are needed, and a very high integration density and scalability to virtually arbitrary channel counts and towards very high data rates (20+ Gbps) become possible. Future cost targets of much less than US$1 per Gbps will be reached by employing standard PCB materials and technologies that are well established in the industry. Moreover, our technology platform has both electrical and optical connectivity and functionality.
Quantum cascade transmitters for ultrasensitive chemical agent and explosives detection
NASA Astrophysics Data System (ADS)
Schultz, John F.; Taubman, Matthew S.; Harper, Warren W.; Williams, Richard M.; Myers, Tanya L.; Cannon, Bret D.; Sheen, David M.; Anheier, Norman C., Jr.; Allen, Paul J.; Sundaram, S. K.; Johnson, Bradley R.; Aker, Pamela M.; Wu, Ming C.; Lau, Erwin K.
2003-07-01
The small size, high power, promise of access to any wavelength between 3.5 and 16 microns, substantial tuning range about a chosen center wavelength, and general robustness of quantum cascade (QC) lasers provide opportunities for new approaches to ultra-sensitive chemical detection and other applications in the mid-wave infrared. PNNL is developing novel remote and sampling chemical sensing systems based on QC lasers, using QC lasers loaned by Lucent Technologies. In recent months laboratory cavity-enhanced sensing experiments have achieved absorption sensitivities of 8.5 x 10-11 cm-1 Hz-1/2, and the PNNL team has begun monostatic and bi-static frequency modulated, differential absorption lidar (FM DIAL) experiments at ranges of up to 2.5 kilometers. In related work, PNNL and UCLA are developing miniature QC laser transmitters with the multiplexed tunable wavelengths, frequency and amplitude stability, modulation characteristics, and power levels needed for chemical sensing and other applications. Current miniaturization concepts envision coupling QC oscillators, QC amplifiers, frequency references, and detectors with miniature waveguides and waveguide-based modulators, isolators, and other devices formed from chalcogenide or other types of glass. Significant progress has been made on QC laser stabilization and amplification, and on development and characterization of high-purity chalcogenide glasses, waveguide writing techniques, and waveguide metrology.
Rao, Ashutosh; Patil, Aniket; Chiles, Jeff; ...
2015-08-20
In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Rao, Ashutosh; Patil, Aniket; Chiles, Jeff
In this study, thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge 23Sb 7S 70, to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10 5 quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scalemore » dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.« less
Exact states in waveguides with periodically modulated nonlinearity
NASA Astrophysics Data System (ADS)
Ding, E.; Chan, H. N.; Chow, K. W.; Nakkeeran, K.; Malomed, B. A.
2017-09-01
We introduce a one-dimensional model based on the nonlinear Schrödinger/Gross-Pitaevskii equation where the local nonlinearity is subject to spatially periodic modulation in terms of the Jacobi {dn} function, with three free parameters including the period, amplitude, and internal form-factor. An exact periodic solution is found for each set of parameters and, which is more important for physical realizations, we solve the inverse problem and predict the period and amplitude of the modulation that yields a particular exact spatially periodic state. A numerical stability analysis demonstrates that the periodic states become modulationally unstable for large periods, and regain stability in the limit of an infinite period, which corresponds to a bright soliton pinned to a localized nonlinearity-modulation pattern. The exact dark-bright soliton complex in a coupled system with a localized modulation structure is also briefly considered. The system can be realized in planar optical waveguides and cigar-shaped atomic Bose-Einstein condensates.
Characterization of Anisotropic Leaky Mode Modulators for Holovideo
Gneiting, Scott; Kimball, Jacob; Henrie, Andrew; McLaughlin, Stephen; DeGraw, Taylor; Smalley, Daniel
2016-01-01
Holovideo displays are based on light-bending spatial light modulators. One such spatial light modulator is the anisotropic leaky mode modulator. This modulator is particularly well suited for holographic video experimentation as it is relatively simple and inexpensive to fabricate1-3. Some additional advantages of leaky mode devices include: large aggregate bandwidth, polarization separation of signal light from noise, large angular deflection and frequency control of color1. In order to realize these advantages, it is necessary to be able to adequately characterize these devices as their operation is strongly dependent on waveguide and transducer parameters4. To characterize the modulators, the authors use a commercial prism coupler as well as a custom characterization apparatus to identify guided modes, calculate waveguide thickness and finally to map the device's frequency input and angular output of leaky mode modulators. This work gives a detailed description of the measurement and characterization of leaky mode modulators suitable for full-color holographic video. PMID:27023115
NASA Astrophysics Data System (ADS)
Haji, L.; Hiraoui, M.; Lorrain, N.; Guendouz, M.
2012-03-01
In this letter we report on the use of an electrochemical process for the fabrication of anti resonant reflecting optical waveguide based on oxidized porous silicon. This method is known to allow the formation of various photonic structures (Bragg mirror, microcavity), thanks to the easy and in situ modulation of the porosity and thus of the refractive index. Planar anti resonant reflecting optical waveguide structure made from porous silicon is demonstrated to be very effective for low losses as compared to conventional resonant waveguide. Optical measurements carried out for TE and TM polarizations are reported and related to optical sensing.
NASA Astrophysics Data System (ADS)
Qi Shen, Jian; He, Sailing
2006-12-01
A three-level EIT (electromagnetically induced transparency) vapor is used to manipulate the transparency and absorption properties of the probe light in a waveguide. The most remarkable feature of the present scheme is such that the optical responses resulting from both electromagnetically induced transparency and large spontaneous emission enhancement are very sensitive to the frequency detunings of the probe light as well as to the small changes of the waveguide dimension. The potential applications of the dimension- and dispersion-sensitive EIT responses are discussed, and the sensitivity limits of some waveguide-based sensors, including electric absorption modulator, optical switch, wavelength sensor, and sensitive magnetometer, are analyzed.
Crivillers, N; Liscio, A; Di Stasio, F; Van Dyck, C; Osella, S; Cornil, D; Mian, S; Lazzerini, G M; Fenwick, O; Orgiu, E; Reinders, F; Braun, S; Fahlman, M; Mayor, M; Cornil, J; Palermo, V; Cacialli, F; Samorì, P
2011-08-28
Responsive monolayers are key building blocks for future applications in organic and molecular electronics in particular because they hold potential for tuning the physico-chemical properties of interfaces, including their energetics. Here we study a photochromic SAM based on a conjugated azobenzene derivative and its influence on the gold work function (Φ(Au)) when chemisorbed on its surface. In particular we show that the Φ(Au) can be modulated with external stimuli by controlling the azobenzene trans/cis isomerization process. This phenomenon is characterized experimentally by four different techniques, kelvin probe, kelvin probe force microscopy, electroabsorption spectroscopy and ultraviolet photoelectron spectroscopy. The use of different techniques implies exposing the SAM to different measurement conditions and different preparation methods, which, remarkably, do not alter the observed work function change (Φ(trans)-Φ(cis)). Theoretical calculations provided a complementary insight crucial to attain a deeper knowledge on the origin of the work function photo-modulation.
FIBER AND INTEGRATED OPTICS: Nonlinearity of a channel-waveguide phase modulator
NASA Astrophysics Data System (ADS)
Parygin, V. N.; Zhmakin, I. N.; Baglikov, V. B.
1993-09-01
The phase velocity of light in a channel waveguide using a LiNbO3 crystal is analyzed as a function of the voltage applied to the crystal. A refinement of the method of an effective refractive index is proposed. This refinement makes it possible to use the method near the cutoff for a waveguide mode. At voltages on the order of 10 V, the nonlinearity of the phase characteristic amounts to ~ 5 · 10- 4 of the linear phase shift.
Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz
NASA Technical Reports Server (NTRS)
Gaier, Todd; Samoska, Lorene; Fung, King Man; Deal, William; Mei, Xiaobing; Lai, Richard
2009-01-01
A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.
Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V
2014-05-01
We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.
Tyszka-Zawadzka, Anna; Janaszek, Bartosz; Szczepański, Paweł
2017-04-03
The tunability of slow light in graphene-based hyperbolic metamaterial waveguide operating in SCLU telecom bands is investigated. For the first time it has been shown that proper design of a GHMM structure forming waveguide layer and the geometry of the waveguide itself allows stopped light to be obtained in an almost freely selected range of wavelengths within SCLU bands. In particular, the possibility of controlling light propagation in GHMM waveguides by external biasing has been presented. The change of external electric field enables the stop light of the selected wavelength as well as the control of a number of modes, which can be stopped, cut off or supported. Proposed GHMM waveguides could offer great opportunities in the field of integrated photonics that are compatible with CMOS technology, especially since such structures can be utilized as photonic memory cells, tunable optical buffers, delays, optical modulators etc.
Du, Jing; Wang, Jian
2017-11-27
Here we design and fabricate a hybrid surface plasmon polarities (SPP) waveguide on the silicon-on-insulator (SOI) photonics platform. The designed hybrid SPP waveguide is composed of a metal ridge, an air gap, and a silicon ridge. We simulate the mode characteristics in the structure and design the waveguide with a wide air gap that can simplify the fabrication process and maintain the advantages of the hybrid SPP mode. The performance of ultrahigh-bandwidth data transmission through the proposed waveguide is then investigated using 161 wavelength-division multiplexing (WDM) channels, each carrying a 11.2-Gbit/s orthogonal frequency-division multiplexing (OFDM) 16-ary quadrature amplitude modulation (16-QAM) signal. The bit-error rates (BERs) of all 161 channels are less than 1e-3. The favorable results show the prospect of on-chip optical interconnection using the proposed hybrid SPP waveguide.
Tokushima, Masatoshi
2018-02-01
To achieve high spectral linearity, we developed a Fano-resonant graded-stub filter on the basis of a pillar-photonic-crystal (PhC) waveguide. In a numerical simulation, the availability of a linear region within a peak-to-bottom wavelength span was nearly doubled compared to that of a sinusoidal spectrum, which was experimentally demonstrated with a fabricated silicon-pillar PhC stub filter. The high linearity of this filter is suitable for optical modulators used in multilevel amplitude modulation.
Unidirectional complex grating assisted couplers
NASA Astrophysics Data System (ADS)
Greenberg, Maxim; Orenstein, Meir
2004-08-01
We present a novel concept which enables the realization of unidirectional and irreversible grating assisted couplers by using gain-loss modulated medium to eliminate the reversibility. Employing a matched periodic modulation of both refractive index and loss (gain) we achieve a unidirectional energy transfer between the modes of the coupler which translates to light transmission from one waveguide to another while disabling the inverse transmission. The importance of self coupling coefficients is explored as well and a feasible implementation, where the real and imaginary perturbations are implemented in different waveguides is presented.
Electro-optic-waveguide frequency translator in LiNbO(3) fabricated by proton exchange.
Wong, K K; De La Rue, R M; Wright, S
1982-11-01
An optical waveguide phase modulator has been fabricated on X-cut LiNbO(3) by using proton exchange in benzoic acid. The phase modulator was operated as a serrodyne optical-frequency translator with shifted-signal to imagesignal discrimination of 52 dB for a 4-MHz frequency shift. The amplitude of the sawtooth driving signal was 10 V peak to peak. Application of a de bias voltage of either polarity was found to cause a substantial reduction in transmitted-light intensity.
Reflective coherent spatial light modulator
Simpson, John T.; Richards, Roger K.; Hutchinson, Donald P.; Simpson, Marcus L.
2003-04-22
A reflective coherent spatial light modulator (RCSLM) includes a subwavelength resonant grating structure (SWS), the SWS including at least one subwavelength resonant grating layer (SWL) have a plurality of areas defining a plurality of pixels. Each pixel represents an area capable of individual control of its reflective response. A structure for modulating the resonant reflective response of at least one pixel is provided. The structure for modulating can include at least one electro-optic layer in optical contact with the SWS. The RCSLM is scalable in both pixel size and wavelength. A method for forming a RCSLM includes the steps of selecting a waveguide material and forming a SWS in the waveguide material, the SWS formed from at least one SWL, the SWL having a plurality of areas defining a plurality of pixels.
Quasi-Phase-Matched Supercontinuum Generation in Photonic Waveguides
NASA Astrophysics Data System (ADS)
Hickstein, Daniel D.; Kerber, Grace C.; Carlson, David R.; Chang, Lin; Westly, Daron; Srinivasan, Kartik; Kowligy, Abijith; Bowers, John E.; Diddams, Scott A.; Papp, Scott B.
2018-02-01
Supercontinuum generation (SCG) in integrated photonic waveguides is a versatile source of broadband light, and the generated spectrum is largely determined by the phase-matching conditions. Here we show that quasi-phase-matching via periodic modulations of the waveguide structure provides a useful mechanism to control the evolution of ultrafast pulses during supercontinuum generation. We experimentally demonstrate a quasi-phase-matched supercontinuum to the TE20 and TE00 waveguide modes, which enhances the intensity of the SCG in specific spectral regions by as much as 20 dB. We utilize higher-order quasi-phase-matching (up to the 16th order) to enhance the intensity in numerous locations across the spectrum. Quasi-phase-matching adds a unique dimension to the design space for SCG waveguides, allowing the spectrum to be engineered for specific applications.
Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.
Mercante, Andrew J; Shi, Shouyuan; Yao, Peng; Xie, Linli; Weikle, Robert M; Prather, Dennis W
2018-05-28
We present a thin film crystal ion sliced (CIS) LiNbO 3 phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm -1 . The design, fabrication, and characterization of our broadband modulator is presented in this work.
Optical interconnects based on VCSELs and low-loss silicon photonics
NASA Astrophysics Data System (ADS)
Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian
2018-02-01
Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.
Waveguide Transition for Submillimeter-Wave MMICs
NASA Technical Reports Server (NTRS)
Leong, Kevin M.; Deal, William R.; Radisic, Vesna; Mei, Xiaobing; Uyeda, Jansen; Lai, Richard; Fung, King Man; Gaier, Todd C.
2009-01-01
An integrated waveguide-to-MMIC (monolithic microwave integrated circuit) chip operating in the 300-GHz range is designed to operate well on high-permittivity semiconductor substrates typical for an MMIC amplifier, and allows a wider MMIC substrate to be used, enabling integration with larger MMICs (power amplifiers). The waveguide-to- CBCPW (conductor-backed coplanar waveguide) transition topology is based on an integrated dipole placed in the E-plane of the waveguide module. It demonstrates low loss and good impedance matching. Measurement and simulation demonstrate that the loss of the transition and waveguide loss is less than 1-dB over a 340-to-380-GHz bandwidth. A transition is inserted along the propagation direction of the waveguide. This transition uses a planar dipole aligned with the maximum E-field of the TE10 waveguide mode as an inter face between the waveguide and the MMIC. Mode conversion between the coplanar striplines (CPS) that feed the dipole and the CBCPW transmission line is accomplished using a simple air-bridge structure. The bottom side ground plane is truncated at the same reference as the top-side ground plane, leaving the end of the MMIC suspended in air.
FDTD modeling of anisotropic nonlinear optical phenomena in silicon waveguides.
Dissanayake, Chethiya M; Premaratne, Malin; Rukhlenko, Ivan D; Agrawal, Govind P
2010-09-27
A deep insight into the inherent anisotropic optical properties of silicon is required to improve the performance of silicon-waveguide-based photonic devices. It may also lead to novel device concepts and substantially extend the capabilities of silicon photonics in the future. In this paper, for the first time to the best of our knowledge, we present a three-dimensional finite-difference time-domain (FDTD) method for modeling optical phenomena in silicon waveguides, which takes into account fully the anisotropy of the third-order electronic and Raman susceptibilities. We show that, under certain realistic conditions that prevent generation of the longitudinal optical field inside the waveguide, this model is considerably simplified and can be represented by a computationally efficient algorithm, suitable for numerical analysis of complex polarization effects. To demonstrate the versatility of our model, we study polarization dependence for several nonlinear effects, including self-phase modulation, cross-phase modulation, and stimulated Raman scattering. Our FDTD model provides a basis for a full-blown numerical simulator that is restricted neither by the single-mode assumption nor by the slowly varying envelope approximation.
A hybrid electro-optic polymer and TiO2 double-slot waveguide modulator
Qiu, Feng; Spring, Andrew M.; Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke; Otomo, Akira; Aoki, Isao; Yokoyama, Shiyoshi
2015-01-01
An electro-optic (EO) modulator using a TiO2 slot hybrid waveguide has been designed and fabricated. Optical mode calculations revealed that the mode was primarily confined within the slots when using a double-slot configuration, thus achieving a high EO activity experimentally. The TiO2 slots also acted as an important barrier to induce an enhanced DC field during the poling of the EO polymer and the driving of the EO modulator. The hybrid phase modulator exhibited a driving voltage (Vπ) of 1.6 V at 1550 nm, which can be further reduced to 0.8 V in a 1 cm-long push-pull Mach–Zehnder interferometer (MZI) structure. The modulator demonstrated a low propagation loss of 5 dB/cm and a relatively high end-fire coupling efficiency. PMID:25708425
Slotline fed microstrip antenna array modules
NASA Technical Reports Server (NTRS)
Lo, Y. T.; Oberhart, M. L.; Brenneman, J. S.; Aoyagi, P.; Moore, J.; Lee, R. Q. H.
1988-01-01
A feed network comprised of a combination of coplanar waveguide and slot transmission line is described for use in an array module of four microstrip elements. Examples of the module incorporating such networks are presented as well as experimentally obtained impedance and radiation characteristics.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Schiff, E. A.; Gu, Q.; Jiang, L.
1998-12-28
This report describes work performed by Syracuse University under this subcontract. Researchers developed a technique based on electroabsorption measurements for obtaining quantitative estimates of the built-in potential Vbi in a-Si:H-based heterostructure solar cells incorporating microcrystalline or a-SiC:H p layers. Using this new electroabsorption technique, researchers confirmed previous estimates of Vbi {yields} 1.0 V in a-Si:H solar cells with ''conventional'' intrinsic layers and either microcrystalline or a-SiC:H p layers. Researchers also explored the recent claim that light-soaking of a-Si:H substantially changes the polarized electroabsorption associated with interband optical transitions (and hence, not defect transitions). Researchers confirmed measurements of improved (5') holemore » drift mobilities in some specially prepared a-Si:H samples. Disturbingly, solar cells made with such materials did not show improved efficiencies. Researchers significantly clarified the relationship of ambipolar diffusion-length measurements to hole drift mobilities in a-Si:H, and have shown that the photocapacitance measurements can be interpreted in terms of hole drift mobilities in amorphous silicon. They also completed a survey of thin BP:H and BPC:H films prepared by plasma deposition using phosphine, diborane, trimethylboron, and hydrogen as precursor gases.« less
NASA Astrophysics Data System (ADS)
Vance, Fredrick W.; Slone, Robert V.; Stern, Charlotte L.; Hupp, Joseph T.
2000-03-01
Electroabsorption or Stark spectroscopy has been used to evaluate the systems (NC) 5M II-CN-Ru III(NH 3) 51- and (NC) 5M II-CN-Ru III(NH 3) 4py 1-, where M II=Fe II or Ru II. When a pyridine ligand is present in the axial position on the Ru III acceptor, the effective optical electron transfer distance - as measured by the change in dipole moment, |Δ μ| - is increased by more than 35% relative to the ammine substituted counterpart. Comparison of the charge transfer distances to the crystal structure of Na[(CN) 5Fe-CN-Ru(NH 3) 4py] · 6H 2O reveals that the Stark derived distances are ˜50% to ˜90% of the geometric separation of the metal centers. The differences result in an upward revision in the Hush delocalization parameter, c b2, and of the electronic coupling matrix element, H ab, relative to those parameters obtained exclusively from electronic absorption measurements. The revised parameters are compared to those, which are obtained via electrochemical techniques and found to be in only fair agreement. We conclude that the absorption/electroabsorption analysis likely yields a more reliable set of mixing and coupling parameters.
Absorption and electroabsorption spectra of carotenoid cation radical and dication
NASA Astrophysics Data System (ADS)
Krawczyk, Stanisław
1998-05-01
Radical cations and dications of two carotenoids astaxanthin and canthaxanthin were prepared by oxidation with FeCl 3 in fluorinated alcohols at room temperature. Absorption and electroabsorption (Stark effect) spectra were recorded for astaxanthin cations in mixed frozen matrices at temperatures about 160 K. The D 0→D 2 transition in cation radical is at 835 nm. The electroabsorption spectrum for the D 0→D 2 transition exhibits a negative change of molecular polarizability, Δ α=-1.2·10 -38 C·m 2/V (-105 A 3), which seems to originate from the change in bond order alternation in the ground state rather than from the electric field-induced interaction of D 1 and D 2 excited states. Absorption spectrum of astaxanthin dication is located at 715-717 nm, between those of D 0→D 2 in cation radical and S 0→S 2 in neutral carotenoid. Its shape reflects a short vibronic progression and strong inhomogeneous broadening. The polarizability change on electronic excitation, Δ α=2.89·10 -38 C·m 2/V (260 A 3), is five times smaller than in neutral astaxanthin. This value reflects the larger energetic distance from the lowest excited state to the higher excited states than in the neutral molecule.
NASA Astrophysics Data System (ADS)
Abdelatty, M. Y.; Badr, M. M.; Swillam, M. A.
2018-03-01
Using transparent conducting oxides (TCOs), like indium-tin-oxide (ITO), for optical modulation attracted research interest because of their epsilon-near-zero (ENZ) characteristics at telecom wavelengths. Utilizing indium-tin-oxide (ITO) in multilayer structure modulators, optical absorption of the active ITO layer can be electrically modulated over a large spectrum range. Although they show advances over common silicon electro-optical modulators (EOMs), they suffer from high insertion losses. To reduce insertion losses and device footprints without sacrificing bandwidth and modulation strength, slot waveguides are promising options because of their high optical confinement. In this paper, we present the study and the design of an electro-optical absorption modulator based on electrically tuning ITO carrier density inside a MOS structure. The device structure is based on dielectric slot waveguide with an ITO plasmonic waveguide modulation section. By changing the dimensions, the effective refractive indices for the slot mode and the off-sate mode of the plasmonic section can be matched. When applying electric field to the plasmonic section (on-state), carriers are generated at the ITO-dielectric interface that result in changing the layer where the electric field is confined from a transparent layer into a lossy layer. A finite difference time domain method with perfect matching layer (PML) absorbing boundary conditions is taken up to simulate and analyze this design. An extinction ratio of 2.3 dB is achieved for a 1-μm-short modulation section, at the telecommunications wavelength (1.55 μm). This EOM has advantages of simple design, easy fabrication, compact size, compatibility with existing silicon photonics platforms, as well as broadband performance.
Enhancement of high-order harmonics in a plasma waveguide formed in clustered Ar gas.
Geng, Xiaotao; Zhong, Shiyang; Chen, Guanglong; Ling, Weijun; He, Xinkui; Wei, Zhiyi; Kim, Dong Eon
2018-02-05
Generation of high-order harmonics (HHs) is intensified by using a plasma waveguide created by a laser in a clustered gas jet. The formation of a plasma waveguide and the guiding of a laser beam are also demonstrated. Compared to the case without a waveguide, harmonics were strengthened up to nine times, and blue-shifted. Numerical simulation by solving the time-dependent Schrödinger equation in strong field approximation agreed well with experimental results. This result reveals that the strengthening is the result of improved phase matching and that the blue shift is a result of change in fundamental laser frequency due to self-phase modulation (SPM).
Wan, W J; Li, H; Cao, J C
2018-01-22
The authors present an experimental investigation of radio frequency modulation on pulsed terahertz quantum cascade lasers (QCLs) emitting around 4.3 THz. The QCL chip used in this work is based on a resonant phonon design which is able to generate a 1.2 W peak power at 10 K from a 400-µm-wide and 4-mm-long laser with a single plasmon waveguide. To enhance the radio frequency modulation efficiency and significantly broaden the terahertz spectra, the QCLs are also processed into a double-metal waveguide geometry with a Silicon lens out-coupler to improve the far-field beam quality. The measured beam patterns of the double-metal QCL show a record low divergence of 2.6° in vertical direction and 2.4° in horizontal direction. Finally we perform the inter-mode beat note and terahertz spectra measurements for both single plasmon and double-metal QCLs working in pulsed mode. Since the double-metal waveguide is more suitable for microwave signal transmission, the radio frequency modulation shows stronger effects on the spectral broadening for the double-metal QCL. Although we are not able to achieve comb operation in this work for the pulsed lasers due to the large phase noise, the homogeneous spectral broadening resulted from the radio frequency modulation can be potentially used for spectroscopic applications.
Dabos, G; Manolis, A; Papaioannou, S; Tsiokos, D; Markey, L; Weeber, J-C; Dereux, A; Giesecke, A L; Porschatis, C; Chmielak, B; Pleros, N
2018-05-14
We demonstrate wavelength-division-multiplexed (WDM) 200 Gb/s (8 × 25 Gb/s) data transmission over 100 μm long aluminum (Al) surface-plasmon-polariton (SPP) waveguides on a Si 3 N 4 waveguide platform at telecom wavelengths. The Al SPP waveguide was evaluated in terms of signal integrity by performing bit-error-rate (BER) measurements that revealed error-free operation for all eight 25 Gb/s non-return-to-zero (NRZ) modulated data channels with power penalties not exceeding 0.2 dB at 10 -9 . To the best of our knowledge, this is the first demonstration of WDM enabled data transmission over complementary-metal-oxide-semiconductor (CMOS) SPP waveguides fueling future development of CMOS compatible plasmo-photonic devices for on-chip optical interconnections.
Modal analysis and cut-off conditions of multichannel surface-acoustic-waveguide structures.
Griffel, G; Golan, G; Ruschin, S; Seidman, A; Croitoru, N
1988-01-01
Multichannel guides for surface acoustic waves can improve the efficiency of SAW (surface acoustic-wave) devices significantly. Focusing, steering, and modulating the propagating acoustical modes can be achieved similarly to optical waveguided devices. A general formulation is presented for the analysis of the lateral waveguiding properties of Rayleigh modes in surfaces loaded with deposited strips of different materials. General expressions are obtained for the number of modes and cutoff conditions in these structures. As examples of applications, a simple directional coupler and an electrically controlled coupler are proposed.
FIBER OPTICS. ACOUSTOOPTICS: Compression of random pulses in fiber waveguides
NASA Astrophysics Data System (ADS)
Aleshkevich, Viktor A.; Kozhoridze, G. D.
1990-07-01
An investigation is made of the compression of randomly modulated signal + noise pulses during their propagation in a fiber waveguide. An allowance is made for a cubic nonlinearity and quadratic dispersion. The relationships governing the kinetics of transformation of the time envelope, and those which determine the duration and intensity of a random pulse are derived. The expressions for the optimal length of a fiber waveguide and for the maximum degree of compression are compared with the available data for regular pulses and the recommendations on selection of the optimal parameters are given.
Low loss poly-silicon for high performance capacitive silicon modulators.
Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric
2018-03-05
Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.
A field induced guide-antiguide modulator of GaAs-AlGaAs
NASA Technical Reports Server (NTRS)
Huang, T. C.; Chung, Y.; Young, D. B.; Dagli, N.; Coldren, L. A.
1991-01-01
A guide-antiguide modulator of GaAs-AlGaAs using the electric-field-induced waveguide concept was demonstrated. The device was formed with a central waveguide electrode sandwiched between two antiguide electrodes on the surface of a p-i-n multiple quantum well (MQW). Switching between lateral guiding and antiguiding was accomplished by reverse biasing either the central electrode or the adjacent electrodes to increase the index beneath these respective regions. The on-off ratio was measured to be 20:1 with a propagation loss of the on-state of about 5 dB/mm.
Tan, Kang; Marpaung, David; Pant, Ravi; Gao, Feng; Li, Enbang; Wang, Jian; Choi, Duk-Yong; Madden, Steve; Luther-Davies, Barry; Sun, Junqiang; Eggleton, Benjamin J
2013-01-28
We report a photonic-chip-based scheme for all-optical ultra-wideband (UWB) pulse generation using a novel all-optical differentiator that exploits cross-phase modulation and birefringence in an As₂S₃ chalcogenide rib waveguide. Polarity-switchable UWB monocycles and doublets were simultaneously obtained with single optical carrier operation. Moreover, transmission over 40-km fiber of the generated UWB doublets is demonstrated with good dispersion tolerance. These results indicate that the proposed approach has potential applications in multi-shape, multi-modulation and long-distance UWB-over-fiber communication systems.
Membrane distributed-reflector laser integrated with SiOx-based spot-size converter on Si substrate.
Nishi, Hidetaka; Fujii, Takuro; Takeda, Koji; Hasebe, Koichi; Kakitsuka, Takaaki; Tsuchizawa, Tai; Yamamoto, Tsuyoshi; Yamada, Koji; Matsuo, Shinji
2016-08-08
We demonstrate monolithic integration of a 50-μm-long-cavity membrane distributed-reflector laser with a spot-size converter, consisting of a tapered InP wire waveguide and an SiOx waveguide, on SiO2/Si substrate. The device exhibits 9.4-GHz/mA0.5 modulation efficiency with a 2.2-dB fiber coupling loss. We demonstrate 25.8-Gbit/s direct modulation with a bias current of 2.5 mA, resulting in a low energy cost of 132 fJ/bit.
Ultra-fast pulse propagation in nonlinear graphene/silicon ridge waveguide
NASA Astrophysics Data System (ADS)
Liu, Ken; Zhang, Jian Fa; Xu, Wei; Zhu, Zhi Hong; Guo, Chu Cai; Li, Xiu Jian; Qin, Shi Qiao
2015-11-01
We report the femtosecond laser propagation in a hybrid graphene/silicon ridge waveguide with demonstration of the ultra-large Kerr coefficient of graphene. We also fabricated a slot-like graphene/silicon ridge waveguide which can enhance its effective Kerr coefficient 1.5 times compared with the graphene/silicon ridge waveguide. Both transverse-electric-like (TE-like) mode and transverse-magnetic-like (TM-like) mode are experimentally measured and numerically analyzed. The results show nonlinearity dependence on mode polarization not in graphene/silicon ridge waveguide but in slot-like graphene/silicon ridge waveguide. Great spectral broadening was observed due to self-phase modulation (SPM) after propagation in the hybrid waveguide with length of 2 mm. Power dependence property of the slot-like hybrid waveguide is also measured and numerically analyzed. The results also confirm the effective Kerr coefficient estimation of the hybrid structures. Spectral blue shift of the output pulse was observed in the slot-like graphene/silicon ridge waveguide. One possible explanation is that the blue shift was caused by the ultra-fast free carrier effect with the optical absorption of the doped graphene. This interesting effect can be used for soliton compression in femtosecond region. We also discussed the broadband anomalous dispersion of the Kerr coefficient of graphene.
NASA Astrophysics Data System (ADS)
Gill, Douglas M.; Rasras, Mahmoud; Tu, Kun-Yii; Chen, Young-Kai; White, Alice E.; Patel, Sanjay S.; Carothers, Daniel; Pomerene, Andrew; Kamocsai, Robert; Beattie, James; Kopa, Anthony; Apsel, Alyssa; Beals, Mark; Mitchel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.
2008-02-01
Integrating electronic and photonic functions onto a single silicon-based chip using techniques compatible with mass-production CMOS electronics will enable new design paradigms for existing system architectures and open new opportunities for electro-optic applications with the potential to dramatically change the management, cost, footprint, weight, and power consumption of today's communication systems. While broadband analog system applications represent a smaller volume market than that for digital data transmission, there are significant deployments of analog electro-optic systems for commercial and military applications. Broadband linear modulation is a critical building block in optical analog signal processing and also could have significant applications in digital communication systems. Recently, broadband electro-optic modulators on a silicon platform have been demonstrated based on the plasma dispersion effect. The use of the plasma dispersion effect within a CMOS compatible waveguide creates new challenges and opportunities for analog signal processing since the index and propagation loss change within the waveguide during modulation. We will review the current status of silicon-based electrooptic modulators and also linearization techniques for optical modulation.
Investigation of a GaAlAs Mach-Zehnder electro-optic modulator. M.S. Thesis. Final Contractor Report
NASA Technical Reports Server (NTRS)
Materna, David M.
1987-01-01
A GaAs modulator operating at 0.78 to 0.88 micron wavelength has the potential to be integrated with a GaAs/GaAlAs laser diode for an integrated fiber-optic transmitter. A travelling-wave Mach-Zehnder modulator using the electro-optic effect of GaAs and operating at a wavelength of 0.82 microns has been investigated for the first time. A four layer Strip-loaded ridge optical waveguide has been analyzed using the effective index method and single mode waveguides have been designed. The electro-optic effect of GaAs has also been analyzed and a modulator using the geometry producing the maximum phase shift has been designed. A coplanar transmission line structure is used in an effort to tap the potentially higher bandwidth of travelling-wave electrodes. The modulator bandwidth has been calculated at 11.95 GHz with a required drive power of 2.335 Watts for full intensity modulation. Finally, some preliminary experiments were performed to characterize a fabrication process for the modulator.
Narrowband resonant transmitter
Hutchinson, Donald P.; Simpson, Marcus L.; Simpson, John T.
2004-06-29
A transverse-longitudinal integrated optical resonator (TLIR) is disclosed which includes a waveguide, a first and a second subwavelength resonant grating in the waveguide, and at least one photonic band gap resonant structure (PBG) in the waveguide. The PBG is positioned between the first and second subwavelength resonant gratings. An electro-optic waveguide material may be used to permit tuning the TLIR and to permit the TLIR to perform signal modulation and switching. The TLIR may be positioned on a bulk substrate die with one or more electronic and optical devices and may be communicably connected to the same. A method for fabricating a TLIR including fabricating a broadband reflective grating is disclosed. A method for tuning the TLIR's transmission resonance wavelength is also disclosed.
Transverse-longitudinal integrated resonator
Hutchinson, Donald P [Knoxville, TN; Simpson, Marcus L [Knoxville, TN; Simpson, John T [Knoxville, TN
2003-03-11
A transverse-longitudinal integrated optical resonator (TLIR) is disclosed which includes a waveguide, a first and a second subwavelength resonant grating in the waveguide, and at least one photonic band gap resonant structure (PBG) in the waveguide. The PBG is positioned between the first and second subwavelength resonant gratings. An electro-optic waveguide material may be used to permit tuning the TLIR and to permit the TLIR to perform signal modulation and switching. The TLIR may be positioned on a bulk substrate die with one or more electronic and optical devices and may be communicably connected to the same. A method for fabricating a TLIR including fabricating a broadband reflective grating is disclosed. A method for tuning the TLIR's transmission resonance wavelength is also disclosed.
Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E
2017-02-15
An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.
Phase modulation in horizontal metal-insulator-silicon-insulator-metal plasmonic waveguides.
Zhu, Shiyang; Lo, G Q; Kwong, D L
2013-04-08
An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-μm-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-κ dielectric as the insulator, respectively.
Wülbern, Jan Hendrik; Petrov, Alexander; Eich, Manfred
2009-01-05
We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz.
Cross-phase-modulation-induced temporal reflection and waveguiding of optical pulses
DOE Office of Scientific and Technical Information (OSTI.GOV)
Plansinis, Brent W.; Donaldson, William R.; Agrawal, Govind P.
Cross-phase modulation (XPM) is commonly viewed as a nonlinear process that chirps a probe pulse and modifies its spectrum when an intense pump pulse overlaps with it. Here we present an alternative view of XPM in which the pump pulse creates a moving refractive-index boundary that splits the probe pulse into two parts with distinct optical spectra through temporal reflection and refraction inside a dispersive nonlinear medium. The probe even undergoes a temporal version of total internal reflection for sufficiently intense pump pulses, a phenomenon that can be exploited for making temporal waveguides. In this paper we investigate the practicalmore » conditions under which XPM can be exploited for temporal reflection and waveguiding. The width and shape of pump pulses as well as the nature of medium dispersion at the pump and probe wavelength (normal versus anomalous) play important roles. A super-Gaussian shape of pump pulses is particularly helpful because of its relatively sharp edges. When the pump wavelength lies in the anomalous-dispersion regime, the pump pulse can form a soliton,whose unique properties can be exploited to advantage. We also discuss a potential application of XPM-induced temporal waveguides for compensating timing jitter.« less
Cross-phase-modulation-induced temporal reflection and waveguiding of optical pulses
Plansinis, Brent W.; Donaldson, William R.; Agrawal, Govind P.
2018-01-31
Cross-phase modulation (XPM) is commonly viewed as a nonlinear process that chirps a probe pulse and modifies its spectrum when an intense pump pulse overlaps with it. Here we present an alternative view of XPM in which the pump pulse creates a moving refractive-index boundary that splits the probe pulse into two parts with distinct optical spectra through temporal reflection and refraction inside a dispersive nonlinear medium. The probe even undergoes a temporal version of total internal reflection for sufficiently intense pump pulses, a phenomenon that can be exploited for making temporal waveguides. In this paper we investigate the practicalmore » conditions under which XPM can be exploited for temporal reflection and waveguiding. The width and shape of pump pulses as well as the nature of medium dispersion at the pump and probe wavelength (normal versus anomalous) play important roles. A super-Gaussian shape of pump pulses is particularly helpful because of its relatively sharp edges. When the pump wavelength lies in the anomalous-dispersion regime, the pump pulse can form a soliton,whose unique properties can be exploited to advantage. We also discuss a potential application of XPM-induced temporal waveguides for compensating timing jitter.« less
L-Band High Power Amplifiers for CEBAF Linac
DOE Office of Scientific and Technical Information (OSTI.GOV)
Fugitt, Jock; Killion, Richard; Nelson, Richard
1990-09-01
The high power portion of the CEBAF RF system utilizes 340 5kW klystrons providing 339 separately controlled outputs. Modulating anodes have been included in the klystron design to provide for economically efficient operation. The design includes shunt regulator-type modulating anode power supplies running from the cathode power supply, and switching filament power supplies. Remotely programmable filament voltage allows maximum cathode life to be realized. Klystron operating setpoint and fast klystron protection logic are provided by individual external CEBAF RF control modules. A single cathode power supply powers a block of eight klystrons. The design includes circulators and custom extrusion andmore » hybrid waveguide components which have allowed reduced physical size and lower cost in the design of the WR-650 waveguide transmission system.« less
Forecast analysis of optical waveguide bus performance
NASA Technical Reports Server (NTRS)
Ledesma, R.; Rourke, M. D.
1979-01-01
Elements to be considered in the design of a data bus include: architecture; data rate; modulation, encoding, detection; power distribution requirements; protocol, work structure; bus reliability, maintainability; interterminal transmission medium; cost; and others specific to application. Fiber- optic data bus considerations for a 32 port transmissive star architecture, are discussed in a tutorial format. General optical-waveguide bus concepts, are reviewed. The electrical and optical performance of a 32 port transmissive star bus, and the effects of temperature on the performance of optical-waveguide buses are examined. A bibliography of pertinent references and the bus receiver test results are included.
NASA Astrophysics Data System (ADS)
Li, Zhen; Liu, Hongjun; Huang, Nan; Wang, Zhaolu; Han, Jing
2018-06-01
The phase-sensitive amplification process of a hybrid graphene–silicon (HyGS) slot waveguide with trilayers of graphene is investigated in this paper. Numerical simulation shows that a relatively high extinction ratio (42 dB) is achieved, because of the ultrahigh nonlinear coefficients, with a waveguide length of only 680 µm. In addition, the graphene layer provides the possibility of modulating the phase status and gain of the output signal. This study is expected to be highly beneficial to applications such as integrated optics and graphene-related active optical devices.
Resonant tunneling effects on cavity-embedded metal film caused by surface-plasmon excitation.
Lan, Yung-Chiang; Chang, Che-Jung; Lee, Peng-Hsiao
2009-01-01
We investigate cavity-modulated resonant tunneling through a silver film with periodic grooves on both surfaces. A strip cavity embedded in the film affects tunneling frequencies via a coupling mode and waveguide mode. In the coupling mode, both the resonant tunneling through the gap between the groove and the cavity and the cavity itself form an entire resonant structure. In the waveguide mode, however, the cavity functions as a surface-plasmon waveguide. Hence, tunneling frequencies are close to resonant absorption frequencies of the groove structure and are irrelevant to cavity properties.
NASA Astrophysics Data System (ADS)
Kovacevic, Goran; Phare, Christopher; Set, Sze Y.; Lipson, Michal; Yamashita, Shinji
2018-06-01
We present a design of an ultra-fast in-line graphene optical modulator on a silicon waveguide with a bandwidth exceeding 100 GHz, very small power consumption below 15 fJ/bit, and insertion loss of 1.5 dB. This is achieved by utilizing the transverse-electric-mode silicon slot to tailor the overlap of graphene electrodes, thus significantly reducing the capacitance of the device while maintaining a low insertion loss and using conservative estimates of the graphene resistance. Our design is substantiated by comprehensive finite-element-method simulations and RC circuit characterization, as well as fabrication feasibility discussion.
Design of a compact high-speed optical modulator based on a hybrid plasmonic nanobeam cavity
NASA Astrophysics Data System (ADS)
Javid, Mohammad Reza; Miri, Mehdi; Zarifkar, Abbas
2018-03-01
A hybrid plasmonic electro-optic modulator based on a polymer-filled one dimensional photonic crystal nanobeam (1D PhCNB) cavity is proposed here. In the proposed structure the optical intensity modulation is realized by shifting the resonant wavelength of the cavity through electrically tuning the refractive index of the electro-optic polymer in the hybrid plasmonic waveguide. As a result of the subwavelength light confinement in the hybrid plasmonic waveguide and the compact footprint of the 1D PhCNB cavity, the designed modulator has the small overall footprint of 3 . 6 μm2 and the required wavelength shift can be achieved by applying very small actuating power. Three dimensional finite-difference time-domain (3D-FDTD) simulations show that the modulation depth of 10.9 dB, and insertion loss of 1.14 dB, along with very high modulation speed of 224 GHz can be achieved in the proposed modulator with very low modulation energy of 0.75 fJ/bit. A comparison between the performance parameters of the proposed modulator and those of previously reported PhCNB based modulators reveals the superior performance of the proposed structure in terms of modulation speed, energy consumption and overall footprint.
Applications of Space-Time Duality
NASA Astrophysics Data System (ADS)
Plansinis, Brent W.
The concept of space-time duality is based on a mathematical analogy between paraxial diffraction and narrowband dispersion, and has led to the development of temporal imaging systems. The first part of this thesis focuses on the development of a temporal imaging system for the Laboratory for Laser Energetics. Using an electro-optic phase modulator as a time lens, a time-to-frequency converter is constructed capable of imaging pulses between 3 and 12 ps. Numerical simulations show how this system can be improved to image the 1-30 ps range used in OMEGA-EP. By adjusting the timing between the pulse and the sinusoidal clock of the phase modulator, the pulse spectrum can be selectively narrowed, broadened, or shifted. An experimental demonstration of this effect achieved spectral narrowing and broadening by a factor of 2. Numerical simulations show narrowing by a factor of 8 is possible with modern phase modulators. The second part of this thesis explores the space-time analog of reflection and refraction from a moving refractive index boundary. From a physics perspective, a temporal boundary breaks translational symmetry in time, requiring the momentum of the photon to remain unchanged while its energy may change. This leads to a shifting and splitting of the pulse spectrum as the boundary is crossed. Equations for the reflected and transmitted frequencies and a condition for total internal reflection are found. Two of these boundaries form a temporal waveguide, which confines the pulse to a narrow temporal window. These waveguides have a finite number of modes, which do not change during propagation. A single-mode waveguide can be created, allowing only a single pulse shape to form within the waveguide. Temporal reflection and refraction produce a frequency dependent phase shift on the incident pulse, leading to interference fringes between the incident light and the reflected light. In a waveguide, this leads to self-imaging, where the pulse shape reforms periodically at finite propagation lengths. Numerical simulations are performed for the specific case where the moving boundary is produced through cross-phase modulation. In this case, the Kerr nonlinearity causes the boundary to change during propagation, leading to unique temporal and spectral behavior.
Lee, Dong-Hun; Jeong, Jong Sool; Kim, Ki-Soo; Kim, Hyun-Soo; Kim, Dong Churl; Park, Mi-Ran; Han, Yong-Tak; Kwon, Oh Kee; Kwon, O-Kyun
2015-02-09
We present a 10-Gb/s L-band reflective electro-absorption modulator integrated with a semiconductor optical amplifier (REAM-SOA) having improved transmission performance at very low input power of seed light. To decrease the input power of seed light, the absorption characteristics of the REAM are adjusted to reduce the amplified spontaneous emission light returned into the SOA, suppressing the gain saturation effect of the SOA. At a considerably low input power of -16 dBm, the REAM-SOA exhibits a low transmission penalty of about 1.2 dB after 50-km SMF transmission. Over a wide input power range from -16 dBm to 5 dBm, a penalty of less than 1.6 dB is achieved at 50-km transmission.
Mechanisms of the Third-Order Nonlinear Optical Response in Dye-Doped Polymers.
NASA Astrophysics Data System (ADS)
Poga, Constantina
Quadratic Electroabsorption is applied to thin -film solid solutions of squarylium dye molecules in poly(methyl methacrylate) polymer to study the mechanisms in the third order nonlinear optical susceptibility. The data are interpreted with the help of a generalized quadratic electrooptic response theory that includes both electronic and hindered molecular motion mechanisms. This theory predicts the tensor ratio of two independent third order susceptibility tensor components, chi_sp{3333}{(3)}/ chi_sp{1133}{(3)}, whose value distinctly characterizes the relative contribution of each mechanism. Although thickness change mechanisms have not been included in this theory, their effect on the tensor ratio chi_sp{3333 }{(3)}/chi_sp{1133} {(3)} has been taken into account for both electrostriction and electrode attraction mechanisms. We measure the tensor ratio with quadratic electroabsorption spectroscopy as a function of temperature and wavelength and find that the response is predominantly electronic at temperatures below the glass transition temperature, but at temperatures higher than the glass transition temperature both reorientational and thickness changes effects play a dominant role. In particular, the contribution of each mechanism has been found for all wavelengths in the visible and the dominant thickness change mechanism has been identified to be electrode attraction. Additionally, the real part of the third-order nonlinear susceptibility can be found through a Kramers-Kronig transformation of the experimentally measured imaginary part. The knowledge of both the real and imaginary part in the visible allows the calculation of the two-photon figure of merit (defined as the real over the imaginary part of chi^{(3) }) which is necessary for determining a material's suitability for all-optical devices. Furthermore, quadratic electroabsorption can be used to characterize the nature of the excited states which in turn can be used to understand the source of the electronic response. For the ISQ chromophore, a one-photon state (at 657nm) and a two-photon state (at 596nm) have been found, and a three-level fit based on these states has been successful in predicting the low temperature chi^{(3)}^ectrum. Quadratic electroabsorption has been proven to be a versatile tool to study the mechanisms of the third -order nonlinear optical response, to measure the electronic gamma, to study the symmetry of the excited states of a molecule and to characterize the suitability of a material for all-optical devices. In this chapter, we start by calculating the change in the imaginary part of the refractive index under the application of an electric field and proceed with connecting this change with the quantities that are experimentally measured by the quadratic electroabsorption experiment. The sample preparation and the data collection are also described.
Topologically protected bound states in one-dimensional Floquet acoustic waveguide systems
NASA Astrophysics Data System (ADS)
Peng, Yu-Gui; Geng, Zhi-Guo; Zhu, Xue-Feng
2018-03-01
Topological manipulation of sound has recently been a hot spot in acoustics due to the fascinating property of defect immune transport. To the best of our knowledge, the studies on one-dimensional (1D) topological acoustic systems hitherto mainly focus on the case of the Su-Schrieffer-Heeger model. Here, we show that topologically protected bound states may also exist in 1D periodically modulated acoustic waveguide systems, viz., 1D Floquet topological insulators. The results show that tuning the coupling strength in a waveguide lattice could trigger topological phase transition, which gives rise to topologically protected interface states as we put together two waveguide lattices featured with different topological phases or winding numbers. However, for the combined lattice, input at the waveguides other than the interfacial ones will excite bulk states. We have further verified the robustness of interface bound states against the variation of coupling strengths between the two distinct waveguide lattices. This work extends the scope of topological acoustics and may promote potential applications for acoustic devices with topological functionalities.
Label-free silicon photonic biosensor system with integrated detector array
Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.
2010-01-01
An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292
SoMIR framework for designing high-NDBP photonic crystal waveguides.
Mirjalili, Seyed Mohammad
2014-06-20
This work proposes a modularized framework for designing the structure of photonic crystal waveguides (PCWs) and reducing human involvement during the design process. The proposed framework consists of three main modules: parameters module, constraints module, and optimizer module. The first module is responsible for defining the structural parameters of a given PCW. The second module defines various limitations in order to achieve desirable optimum designs. The third module is the optimizer, in which a numerical optimization method is employed to perform optimization. As case studies, two new structures called Ellipse PCW (EPCW) and Hypoellipse PCW (HPCW) with different shape of holes in each row are proposed and optimized by the framework. The calculation results show that the proposed framework is able to successfully optimize the structures of the new EPCW and HPCW. In addition, the results demonstrate the applicability of the proposed framework for optimizing different PCWs. The results of the comparative study show that the optimized EPCW and HPCW provide 18% and 9% significant improvements in normalized delay-bandwidth product (NDBP), respectively, compared to the ring-shape-hole PCW, which has the highest NDBP in the literature. Finally, the simulations of pulse propagation confirm the manufacturing feasibility of both optimized structures.
Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Sang, Xinzhu; Wang, Kuiru; Wu, Qiang; Yan, Binbin; Li, Feng; Zhou, Xian; Zhong, Kangping; Zhou, Guiyao; Yu, Chongxiu; Farrell, Gerald; Lu, Chao; Yaw Tam, Hwa; Wai, P. K. A.
2016-01-01
High performance all-optical quantizer based on silicon waveguide is believed to have significant applications in photonic integratable optical communication links, optical interconnection networks, and real-time signal processing systems. In this paper, we propose an integratable all-optical quantizer for on-chip and low power consumption all-optical analog-to-digital converters. The quantization is realized by the strong cross-phase modulation and interference in a silicon-organic hybrid (SOH) slot waveguide based Mach-Zehnder interferometer. By carefully designing the dimension of the SOH waveguide, large nonlinear coefficients up to 16,000 and 18,069 W−1/m for the pump and probe signals can be obtained respectively, along with a low pulse walk-off parameter of 66.7 fs/mm, and all-normal dispersion in the wavelength regime considered. Simulation results show that the phase shift of the probe signal can reach 8π at a low pump pulse peak power of 206 mW and propagation length of 5 mm such that a 4-bit all-optical quantizer can be realized. The corresponding signal-to-noise ratio is 23.42 dB and effective number of bit is 3.89-bit. PMID:26777054
Glass Solder Approach for Robust, Low-Loss, Fiber-to-Waveguide Coupling
NASA Technical Reports Server (NTRS)
McNeil, Shirley; Battle, Philip; Hawthorne, Todd; Lower, John; Wiley, Robert; Clark, Brett
2012-01-01
The key advantages of this approach include the fact that the index of interface glass (such as Pb glass n = 1.66) greatly reduces Fresnel losses at the fiber-to-waveguide interface, resulting in lower optical losses. A contiguous structure cannot be misaligned and readily lends itself for use on aircraft or space operation. The epoxy-free, fiber-to-waveguide interface provides an optically pure, sealed interface for low-loss, highpower coupling. Proof of concept of this approach has included successful attachment of the low-melting-temperature glass to the x-y plane of the crystal, successful attachment of the low-meltingtemperature glass to the end face of a standard SMF (single-mode fiber), and successful attachment of a wetted lowmelting- temperature glass SMF to the end face of a KTP crystal. There are many photonic components on the market whose performance and robustness could benefit from this coupling approach once fully developed. It can be used in a variety of fibercoupled waveguide-based components, such as frequency conversion modules, and amplitude and phase modulators. A robust, epoxy-free, contiguous optical interface lends itself to components that require low-loss, high-optical-power handling capability, and good performance in adverse environments such as flight or space operation.
Transverse magnetic field impact on waveguide modes of photonic crystals.
Sylgacheva, Daria; Khokhlov, Nikolai; Kalish, Andrey; Dagesyan, Sarkis; Prokopov, Anatoly; Shaposhnikov, Alexandr; Berzhansky, Vladimir; Nur-E-Alam, Mohammad; Vasiliev, Mikhail; Alameh, Kamal; Belotelov, Vladimir
2016-08-15
This Letter presents a theoretical and experimental study of waveguide modes of one-dimensional magneto-photonic crystals magnetized in the in-plane direction. It is shown that the propagation constants of the TM waveguide modes are sensitive to the transverse magnetization and the spectrum of the transverse magneto-optical Kerr effect has resonant features at mode excitation frequencies. Two types of structures are considered: a non-magnetic photonic crystal with an additional magnetic layer on top and a magneto-photonic crystal with a magnetic layer within each period. We found that the magneto-optical non-reciprocity effect is greater in the first case: it has a magnitude of δ∼10-4, while the second structure type demonstrates δ∼10-5 only, due to the higher asymmetry of the claddings of the magnetic layer. Experimental observations show resonant features in the optical and magneto-optical Kerr effect spectra. The measured dispersion properties are in good agreement with the theoretical predictions. An amplitude of light intensity modulation of up to 2.5% was observed for waveguide mode excitation within the magnetic top layer of the non-magnetic photonic crystal structure. The presented theoretical approach may be utilized for the design of magneto-optical sensors and modulators requiring pre-determined spectral features.
Low loss photonic components in high index bismuth borate glass by femtosecond laser direct writing.
Yang, Weijia; Corbari, Costantino; Kazansky, Peter G; Sakaguchi, Koichi; Carvalho, Isabel C S
2008-09-29
Single mode, low loss waveguides were fabricated in high index bismuth borate glass by femtosecond laser direct writing. A specific set of writing parameters leading to waveguides perfectly mode matched to standard single-mode fibers at 1.55 microm with an overall insertion loss of approximately 1 dB and with propagation loss below 0.2 dB/cm was identified. Photonic components such as Y-splitters and directional couplers were also demonstrated. A close agreement between their performances and theoretical predictions based upon the characterization of the waveguide properties is shown. Finally, the nonlinear refractive index of the waveguides has been measured to be 6.6 x 10(-15) cm(2)/W by analyzing self-phase modulation of the propagating femtosecond laser pulse at the wavelength of 1.46 microm. Broadening of the transmitted light source as large as 500 nm was demonstrated through a waveguide with the length of 1.8 cm.
Waveguide Modulator for Interference Tolerant Functional Near Infrared Spectrometer (fNIRS)
NASA Technical Reports Server (NTRS)
Walton, Joanne; Tin, Padetha; Mackey, Jeffrey
2017-01-01
Many crew-related errors in aviation and astronautics are caused by hazardous cognitive states including overstress, disengagement, high fatigue and ineffective crew coordination. Safety can be improved by monitoring and predicting these cognitive states in a non-intrusive manner and designing mitigation strategies. Measuring hemoglobin concentration changes in the brain with functional Near Infrared Spectroscopy is a promising technique for monitoring cognitive state and optimizing human performance during both space and aviation operations. A compact, wearable fNIRS system would provide an innovative early warning system during long duration missions to detect and prevent vigilance decrements in pilots and astronauts. This effort focused on developing a waveguide modulator for use in a fNIRS system.
NASA Astrophysics Data System (ADS)
Zhang, Jiahong; Zhao, Zhengang; Li, Chuan; Li, Yingna
2017-09-01
A lithium niobate (LiNbO3) broad-band photonic sensor using reflection-type Mach-Zehnder optical waveguide modulator has been designed, fabricated, and experimentally demonstrated. The bare chip size of the sensor is microminiaturized as small as 20×5×0.5 mm3. The sensor has a wide band frequency response from 10 kHz to 20 GHz with variation less than ± 5 dB. The sensor system shows better linear characteristic from 100 mV/m to 700 V/m, and the sensitivity is 33 mV/m. Besides, the nanosecond EMP with intensity of 30 kV/m has been measured in the time domain.
Design of an ultra-thin near-eye display with geometrical waveguide and freeform optics.
Cheng, Dewen; Wang, Yongtian; Xu, Chen; Song, Weitao; Jin, Guofan
2014-08-25
Small thickness and light weight are two important requirements for a see-through near-eye display which are achieved in this paper by using two advanced technologies: geometrical waveguide and freeform optics. A major problem associated with the geometrical waveguide is the stray light which can severely degrade the display quality. The causes and solutions to this problem are thoroughly studied. A mathematical model of the waveguide is established and a non-sequential ray tracing algorithm is developed, which enable us to carefully examine the stray light of the planar waveguide and explore a global searching method to find an optimum design with the least amount of stray light. A projection optics using freeform surfaces on a wedge shaped prism is also designed. The near-eye display integrating the projection optics and the waveguide has a field of view of 28°, an exit pupil diameter of 9.6mm and an exit pupil distance of 20mm. In our final design, the proportion of the stray light energy over the image output energy of the waveguide is reduced to 2%, the modulation transfer function values across the entire field of the eyepiece are above 0.5 at 30 line pairs/mm (lps/mm). A proof-of-concept prototype of the proposed geometrical waveguide near-eye display is developed and demonstrated.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Marchetti, Alfred P.; Haskins, Terri L.; Young, Ralph H.
2014-03-21
Vapor-deposited Alq{sub 3} layers typically possess a strong permanent electrical polarization, whereas NPB layers do not. (Alq{sub 3} is tris(8-quinolinolato)aluminum(III); NPB is 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl.) The cause is a net orientation of the Alq{sub 3} molecules with their large dipole moments. Here we report on consequences for an organic light-emitting diode (OLED) with an NPB hole-transport layer and Alq{sub 3} electron-transport layer. The discontinuous polarization at the NPB|Alq{sub 3} interface has the same effect as a sheet of immobile negative charge there. It is more than compensated by a large concentration of injected holes (NPB{sup +}) when the OLED is running. Wemore » discuss the implications and consequences for the quantum efficiency and the drive voltage of this OLED and others. We also speculate on possible consequences of permanent polarization in organic photovoltaic devices. The concentration of NPB{sup +} was measured by charge-modulation spectroscopy (CMS) in the near infrared, where the NPB{sup +} has a strong absorption band, supplemented by differential-capacitance and current-voltage measurements. Unlike CMS in the visible, this method avoids complications from modulation of the electroluminescence and electroabsorption.« less
Asadi, R; Ouyang, Z; Mohammd, M M
2015-07-14
We design a compact, all-optical THz wave generator based on self-modulation in a 1-D slab photonic crystal (PhC) waveguide with a single sub-nanometer graphene layer by using enhanced nonlinearity of graphene. It has been shown that at the bandgap edge of higher bands of a 1-D slab PhC, through only one sub-nanometer graphene layer we can obtain a compact, high modulation factor (about 0.98 percent), self-intensity modulator at a high frequency (about 0.6 THz) and low threshold intensity (about 15 MW per square centimeter), and further a compact, all-optical THz wave generator by integrating the self-modulator with a THz photodiode or photonic mixer. Such a THz source is expected to have a relatively high efficiency compared with conventional sources based on optical methods. The proposed THz source can find wide applications in THz science and technology, e.g., in THz imaging, THz sensors and detectors, THz communication systems, and THz optical integrated logic circuits.
NASA Astrophysics Data System (ADS)
Kondalkar, Vijay V.; Ryu, Geonhee; Lee, Yongbeom; Lee, Keekeun
2018-07-01
An acousto-optic (AO) based holographic display unit was developed using surface acoustic wave (SAW) with different wavelength to modulate the diffraction angles, intensities, and phases of light. The new configurations were employed to control two beams simultaneously by using a single chirp inter-digital transducer (IDT), and a micro-lens array was integrated at the end of the waveguide layer to focus the diffracted light on to the screen. Two incident light beams were simultaneously modulated by using different refractive grating periods generated from chirp IDT. A diffraction angle of about 5° was obtained by using a SAW with a frequency of 430 MHz. The increase in the SAW input power enhances the diffraction efficiency of the light beam at the exit. The obtained maximum diffraction efficiency is ~70% at a frequency of 430 MHz. The sloped shape of the waveguide entrance and a tall rounded Ni poles help in coupling the incident light to the waveguide layer. The diffracted beam was collected through the lens, which increased the intensity of light in the viewing plane. COMSOL multi-physics and coupling of mode (COM) modeling were performed to predict the device performance and compared with the experimental results.
Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya
2011-10-10
We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.
Stoichiometric Lithium Niobate (SLN) Based Linearized Electro-Optic (EO) Modulator
2006-01-01
AFRL-SN-RS-TR-2006-15 Final Technical Report January 2006 STOICHIOMETRIC LITHIUM NIOBATE (SLN) BASED LINEARIZED ELECTRO - OPTIC (EO...LITHIUM NIOBATE (SLN) BASED LINEARIZED ELECTRO - OPTIC (EO) MODULATOR 6. AUTHOR(S) Dr Stuart Kingsley, Dr Sri Sriram 5. FUNDING NUMBERS C...SUBJECT TERMS electro - optic modulator, linearization, directional coupler, variable coupling, optical waveguide, Mach-Zehnder, photonic link, lithium
Wannier-Stark localization of a strongly coupled asymmetric double-well GaAs/AlAs superlattice
NASA Astrophysics Data System (ADS)
Kawashima, Kenji; Matsumoto, Takeshi; Arima, Kiyotoku; Ohsumi, Takahiro; Nogami, Takamitsu; Satoh, Kazuo; Fujiwara, Kenzo
2000-06-01
A novel new type of superlattice (SL) structure which consists of strongly coupled asymmetric double-well (ADW) in one period have been investigated to introduce a new degree of freedom for the device funtionality. The GaAs/A1As ADS-SL contained in a p-i-n diode structure was grown by molecular beam epitaxy, and the electroabsorption properties were measured by low temperature photocurrent spectroscopy. It is found that the introduction of the confinement potential asymmetry with respect to electric field will lead to the selectivity of spatially indirect Stark-ladder transitions associated with two different types of the localized hole states, thus providing a new way of modulating the oscillator strengths. Assignment of the possible optical transitions from the miniband to the Stark-ladder regimes as a function of field strength is elucidated in detail by transfer matrix calculations.
Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability.
Tien, Ming-Chun; Bauters, Jared F; Heck, Martijn J R; Blumenthal, Daniel J; Bowers, John E
2010-11-08
We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell's wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity. The effective n2 measured using continuous-wave self-phase modulation shows agreement with the theoretical calculation. The waveguide with 2.8-μm wide and 80-nm thick Si3N4 core has low loss and high power handling capability, with an effective n2 of about 9×10(-16) cm2/W.
NASA Astrophysics Data System (ADS)
Ostrowsky, D. B.; Sriram, S.
Aspects of waveguide technology are explored, taking into account waveguide fabrication techniques in GaAs/GaAlAs, the design and fabrication of AlGaAs/GaAs phase couplers for optical integrated circuit applications, ion implanted GaAs integrated optics fabrication technology, a direct writing electron beam lithography based process for the realization of optoelectronic integrated circuits, and advances in the development of semiconductor integrated optical circuits for telecommunications. Other subjects examined are related to optical signal processing, optical switching, and questions of optical bistability and logic. Attention is given to acousto-optic techniques in integrated optics, acousto-optic Bragg diffraction in proton exchanged waveguides, optical threshold logic architectures for hybrid binary/residue processors, integrated optical modulation and switching, all-optic logic devices for waveguide optics, optoelectronic switching, high-speed photodetector switching, and a mechanical optical switch.
Integrated optical transceiver with electronically controlled optical beamsteering
DOE Office of Scientific and Technical Information (OSTI.GOV)
Davids, Paul; DeRose, Christopher; Tauke-Pedretti, Anna
A beam-steering optical transceiver is provided. The transceiver includes one or more modules, each comprising an antenna chip and a control chip bonded to the antenna chip. Each antenna chip has a feeder waveguide, a plurality of row waveguides that tap off from the feeder waveguide, and a plurality of metallic nanoantenna elements arranged in a two-dimensional array of rows and columns such that each row overlies one of the row waveguides. Each antenna chip also includes a plurality of independently addressable thermo-optical phase shifters, each configured to produce a thermo-optical phase shift in a respective row. Each antenna chipmore » also has, for each row, a row-wise heating circuit configured to produce a respective thermo-optic phase shift at each nanoantenna element along its row. The control chip includes controllable current sources for the independently addressable thermo-optical phase shifters and the row-wise heating circuits.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Song, Guo-Zhu; Zhang, Mei; Ai, Qing
We propose a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We show the details by implementing nonlocal entanglement generation, entanglement swapping, and entanglement purification modules with atoms in waveguides, and discuss the feasibility of the repeater with currently achievable technology. In our scheme, the faulty events can be discarded by detecting the polarization of the photons. That is, our protocols are accomplished with a fidelity of 100% in principle, which is advantageous for implementing realistic long-distance quantum communication. Moreover, additional atomic qubits are not required, but only a single-photon medium. Our schememore » is scalable and attractive since it can be realized in solid-state quantum systems. With the great progress on controlling atom-waveguide systems, the repeater may be very useful in quantum information processing in the future.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Brächer, T.; Graduate School Materials Science in Mainz, Gottlieb-Daimler-Strasse 47, D-67663 Kaiserslautern; Pirro, P.
2014-03-03
We present the experimental observation of localized parallel parametric generation of spin waves in a transversally in-plane magnetized Ni{sub 81}Fe{sub 19} magnonic waveguide. The localization is realized by combining the threshold character of parametric generation with a spatially confined enhancement of the amplifying microwave field. The latter is achieved by modulating the width of the microstrip transmission line which is used to provide the pumping field. By employing microfocussed Brillouin light scattering spectroscopy, we analyze the spatial distribution of the generated spin waves and compare it with numerical calculations of the field distribution along the Ni{sub 81}Fe{sub 19} waveguide. Thismore » provides a local spin-wave excitation in transversally in-plane magnetized waveguides for a wide wave-vector range which is not restricted by the size of the generation area.« less
Waveguide-Mode Terahertz Free Electron Lasers Driven by Magnetron-Based Microtrons
NASA Astrophysics Data System (ADS)
Jeong, Young Uk; Miginsky, Sergey; Gudkov, Boris; Lee, Kitae; Mun, Jungho; Shim, Gyu Il; Bae, Sangyoon; Kim, Hyun Woo; Jang, Kyu-Ha; Park, Sunjeong; Park, Seong Hee; Vinokurov, Nikolay
2016-04-01
We have developed small-sized terahertz free-electron lasers by using low-cost and compact microtrons combining with magnetrons as high-power RF sources. We could stabilize the bunch repetition rate by optimizing a modulator for the magnetron and by coupling the magnetron with an accelerating cavity in the microtron. By developing high-performance undulators and low-loss waveguide-mode resonators having small cross-sectional areas, we could strengthen the interaction between the electron beam and the THz wave inside the FEL resonators to achieve lasing even with low-current electron beams from the microtron. We used a parallel-plate waveguide in a planar electromagnet undulator for our first THz FEL. We try to reduce the size of the FEL resonator by combining a dielectric-coated circular waveguide and a variable-period helical undulator to realize a table-top THz FEL for applying it to the security inspection on airports.
Iwakuni, Kana; Inaba, Hajime; Nakajima, Yoshiaki; Kobayashi, Takumi; Hosaka, Kazumoto; Onae, Atsushi; Hong, Feng-Lei
2012-06-18
We have developed an optical frequency comb using a mode-locked fiber ring laser with an intra-cavity waveguide electro-optic modulator controlling the optical length in the laser cavity. The mode-locking is achieved with a simple ring configuration and a nonlinear polarization rotation mechanism. The beat note between the laser and a reference laser and the carrier envelope offset frequency of the comb were simultaneously phase locked with servo bandwidths of 1.3 MHz and 900 kHz, respectively. We observed an out-of-loop beat between two identical combs, and obtained a coherent δ-function peak with a signal to noise ratio of 70 dB/Hz.
NASA Astrophysics Data System (ADS)
Jin, Gui; Huang, Xiaoyi
2018-02-01
We propose and demonstrate a metal-dielectric-metal(MDM) waveguide side coupled with two stubs to realize plasmon induced transparency (PIT) effect. The dispersion relation of the structure has been plotted by solving the dispersion equation of MDM three layer structure, the transmission spectrum is investigated by coupled mode theory (CMT) and Finite Element Method (FEM) simulation, the CMT results can. The surface plasmon device can also be used as a EIT-like filter with a variable full width of half-maximum (FWHM) and highest transmission over 88%. The maximum group index ng is 42 with a group velocity of 0.023ܿ and transmission of 48%, The normalized delay-bandwidth product (NDBP) can be modulated through changing the gap width of resonators and waveguide bus, the highest is 0.641 at gap width 10 nm, and lowest is 0.246 at 30 nm. The dispersion of group velocity (GVD) changes drastically at narrow gap width and becomes more and more flat at broader gap width, this opens up an avenue for designing optical buffers, switches and modulators.
Design and characterization of a W-band system for modulated DNP experiments.
Guy, Mallory L; Zhu, Lihuang; Ramanathan, Chandrasekhar
2015-12-01
Magnetic-field and microwave-frequency modulated DNP experiments have been shown to yield improved enhancements over conventional DNP techniques, and even to shorten polarization build-up times. The resulting increase in signal-to-noise ratios can lead to significantly shorter acquisition times in signal-limited multi-dimensional NMR experiments and pave the way to the study of even smaller sample volumes. In this paper we describe the design and performance of a broadband system for microwave frequency- and amplitude-modulated DNP that has been engineered to minimize both microwave and thermal losses during operation at liquid helium temperatures. The system incorporates a flexible source that can generate arbitrary waveforms at 94GHz with a bandwidth greater than 1GHz, as well as a probe that efficiently transmits the millimeter waves from room temperature outside the magnet to a cryogenic environment inside the magnet. Using a thin-walled brass tube as an overmoded waveguide to transmit a hybrid HE11 mode, it is possible to limit the losses to 1dB across a 2GHz bandwidth. The loss is dominated by the presence of a quartz window used to isolate the waveguide pipe. This performance is comparable to systems with corrugated waveguide or quasi-optical components. The overall excitation bandwidth of the probe is seen to be primarily determined by the final antenna or resonator used to excite the sample and its coupling to the NMR RF coil. Understanding the instrumental limitations imposed on any modulation scheme is key to understanding the observed DNP results and potentially identifying the underlying mechanisms. We demonstrate the utility of our design with a set of triangular frequency-modulated DNP experiments. Copyright © 2015 Elsevier Inc. All rights reserved.
Board-to-board optical interconnection using novel optical plug and slot
NASA Astrophysics Data System (ADS)
Cho, In K.; Yoon, Keun Byoung; Ahn, Seong H.; Kim, Jin Tae; Lee, Woo Jin; Shin, Kyoung Up; Heo, Young Un; Park, Hyo Hoon
2004-10-01
A novel optical PCB with transmitter/receiver system boards and optical bakcplane was prepared, which is board-to-board interconnection by optical plug and slot. We report an 8Gb/s PRBS NRZ data transmission between transmitter system board and optical backplane embedded multimode polymeric waveguide arrays. The basic concept of ETRI's optical PCB is as follows; 1) Metal optical bench is integrated with optoelectronic devices, driver and receiver circuits, polymeric waveguide and access line PCB module. 2) Multimode polymeric waveguide inside an optical backplane, which is embedded into PCB. 3) Optical slot and plug for high-density(channel pitch : 500um) board-to-board interconnection. The polymeric waveguide technology can be used for transmission of data on transmitter/ receiver system boards and for backplane interconnections. The main components are low-loss tapered polymeric waveguides and a novel optical plug and slot for board-to-board interconnections, respectively. The optical PCB is characteristic of low coupling loss, easy insertion/extraction of the boards and, especially, reliable optical coupling unaffected from external environment after board insertion.
Zhuang, Leimeng; Taddei, Caterina; Hoekman, Marcel; Leinse, Arne; Heideman, René; van Dijk, Paulus; Roeloffzen, Chris
2013-11-04
In this paper, we propose and experimentally demonstrate a novel wideband on-chip photonic modulation transformer for phase-modulated microwave photonic links. The proposed device is able to transform phase-modulated optical signals into intensity-modulated versions (or vice versa) with nearly zero conversion of laser phase noise to intensity noise. It is constructed using waveguide-based ring resonators, which features simple architecture, stable operation, and easy reconfigurability. Beyond the stand-alone functionality, the proposed device can also be integrated with other functional building blocks of photonic integrated circuits (PICs) to create on-chip complex microwave photonic signal processors. As an application example, a PIC consisting of two such modulation transformers and a notch filter has been designed and realized in TriPleX(TM) waveguide technology. The realized device uses a 2 × 2 splitting circuit and 3 ring resonators with a free spectral range of 25 GHz, which are all equipped with continuous tuning elements. The device can perform phase-to-intensity modulation transform and carrier suppression simultaneously, which enables high-performance phase-modulated microwave photonics links (PM-MPLs). Associated with the bias-free and low-complexity advantages of the phase modulators, a single-fiber-span PM-MPL with a RF bandwidth of 12 GHz (3 dB-suppression band 6 to 18 GHz) has been demonstrated comprising the proposed PIC, where the achieved spurious-free dynamic range performance is comparable to that of Class-AB MPLs using low-biased Mach-Zehnder modulators.
Electromodulation spectroscopy of sc and fcc phase TlCl and TlBr
DOE Office of Scientific and Technical Information (OSTI.GOV)
McClelland, J.F.
1976-06-01
Electromodulation measurements were made on these compounds and the spectra were reduced to the electric field induced changes in the dielectric function. The results indicate the importance of photocarrier effects in both theory and experiment in the electromodulation of exciton states. In the future, calculations should include the effect of photocarriers on the field seen by the exciton and experimentally samples should be developed with known and reproducible photocarrier properties with temperature control between liquid helium and nitrogen temperatures and bipolar modulation fields. The abnormal (fcc) phase electroabsorption (EA) measurements have demonstrated the usefulness of the modulation method in resolvingmore » exciton states by determining the n = 2 energy in TlBr. This has enabled a number of quantities to be calculated from the Wannier exciton model. The resolution of the n = 2 energy in TlCl is probably also possible with an EA measurement and patience with the signal to noise problem. The ..cap alpha.. and ..beta.. features are still unassigned but the unusual EA lineshape and sample preparation sensitivity found in this investigation may prove useful in making definitive assignments in conjunction with future work.« less
High frequency GaAlAs modulator and photodetector for phased array antenna applications
NASA Technical Reports Server (NTRS)
Claspy, P. C.; Chorey, C. M.; Hill, S. M.; Bhasin, K. B.
1988-01-01
A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.
NASA Astrophysics Data System (ADS)
Kolarczik, Mirco; Ulbrich, Christian; Geiregat, Pieter; Zhu, Yunpeng; Sagar, Laxmi Kishore; Singh, Akshay; Herzog, Bastian; Achtstein, Alexander W.; Li, Xiaoqin; van Thourhout, Dries; Hens, Zeger; Owschimikow, Nina; Woggon, Ulrike
2018-01-01
For possible applications of colloidal nanocrystals in optoelectronics and nanophotonics, it is of high interest to study their response at low excitation intensity with high repetition rates, as switching energies in the pJ/bit to sub-pJ/bit range are targeted. We develop a sensitive pump-probe method to study the carrier dynamics in colloidal PbS/CdS quantum dots deposited on a silicon nitride waveguide after excitation by laser pulses with an average energy of few pJ/pulse. We combine an amplitude modulation of the pump pulse with phase-sensitive heterodyne detection. This approach permits to use co-linearly propagating co-polarized pulses. The method allows resolving transmission changes of the order of 10-5 and phase changes of arcseconds. We find a modulation on a sub-nanosecond time scale caused by Auger processes and biexciton decay in the quantum dots. With ground state lifetimes exceeding 1 μs, these processes become important for possible realizations of opto-electronic switching and modulation based on colloidal quantum dots emitting in the telecommunication wavelength regime.
Coupling and Switching in Optically Resonant Periodic Electrode Structures
NASA Astrophysics Data System (ADS)
Bieber, Amy Erica
This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.
Enhanced Electro-Optic Phase Shifts in Suspended Waveguides
2010-01-18
section,” J. Lightwave. Technol. (16), 1851–1853 (1998). 9. T . Ikegami , “Reflectivity of mode at facet and oscillation mode in double-heterostructure...Enhanced Electro-Optic Phase Shifts in Suspended Waveguides T . H. Stievater,1 D. Park,1 W. S. Rabinovich,1 M. W. Pruessner,1, S. Kanakaraju,2 C. J. K... T . H. Stievater, W. S. Rabinovich, P. G. Goetz, R. Mahon, and S. C. Binari, “A Surface-Normal Coupled- Quantum-Well Modulator at 1.55 Microns,” IEEE
Silicon photonic IC embedded optical-PCB for high-speed interconnect application
NASA Astrophysics Data System (ADS)
Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar
2018-02-01
Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.
Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof
Skogen, Erik J.
2016-10-25
The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.
Hollow Waveguide Gas Sensor for Mid-Infrared Trace Gas Analysis
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, S; Young, C; Chan, J
2007-07-12
A hollow waveguide mid-infrared gas sensor operating from 1000 cm{sup -1} to 4000 cm{sup -1} has been developed, optimized, and its performance characterized by combining a FT-IR spectrometer with Ag/Ag-halide hollow core optical fibers. The hollow core waveguide simultaneously serves as a light guide and miniature gas cell. CH{sub 4} was used as test analyte during exponential dilution experiments for accurate determination of the achievable limit of detection (LOD). It is shown that the optimized integration of an optical gas sensor module with FT-IR spectroscopy provides trace sensitivity at the few hundreds of parts-per-billion concentration range (ppb, v/v) for CH{submore » 4}.« less
Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles
NASA Astrophysics Data System (ADS)
Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal
2015-05-01
We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a <100> wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.
Spatial Light Modulators with Arbitrary Quantum Wells Profiles
1993-09-27
phase change in the 1.152Pm wave propagating through the waveguide and appears as an optically bistable intensity signal normal to the control beam ...electrical bistability of a SEED was integrated with a phase modulator to produce optical bistability in an all- optical switch. A control wavelength of...received attention for its use in electrically-addressable spatial light intensity modulator arrays due to its potentially high contrast ratio, large
NASA Astrophysics Data System (ADS)
Field, E. C.; Bloom, R. M.
1993-05-01
In this report, the principal of reciprocity is used in conjunction with a full-wave propagation code to calculate ground-level fields excited by ionospheric currents modulated at frequencies between 50 and 100 Hz with HF heaters. Results show the dependence on source orientation, altitude, and dimension and therefore pertain to experiments using the HIPAS or HAARP ionospheric heaters. In the end-fire mode, the waveguide excitation efficiency of an ELF HED in the ionosphere is up to 20 dB greater than for a ground-based antenna, provided its altitude does not exceed 80 to 90 km. The highest efficiency occurs for a source altitude of around 70 km; if that altitude is raised to 100 km, the efficiency drops by about 20 dB in the day and 10 dB at night. That efficiency does not account for the greater conductivity modulation that might be achieved at altitudes greater than 70 km, however. The trade-off between the altitude dependencies of the excitation efficiency and maximum achievable modulation depends on the ERP of the HF heater, the optimum altitude increasing with increasing ERP. For HIPAS the best modulation altitude is around 70 km, whereas for HAARP there might be marginal value in modulating at attitudes as high as 100 km.
High voltage photo-switch package module having encapsulation with profiled metallized concavities
Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A
2015-05-05
A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.
NASA Astrophysics Data System (ADS)
Ashley, P. R.; Temmen, M. G.; Diffey, W. M.; Sanghadasa, M.; Bramson, M. D.
2007-10-01
Active and passive polymer materials have been successfully used in the development of highly accurate, compact and low cost guided-wave components: an optical transceiver and a phase modulator, for inertial measurement units (IMUs) based on the interferometric fibre optic gyroscope (IFOG) technology for precision guidance in navigation systems. High performance and low noise transceivers with high optical power and good spectral quality were fabricated using a silicon-bench architecture. Low loss phase modulators with low halfwave drive voltage (Vπ) have been fabricated with a backscatter compensated design using polarizing waveguides consisting of CLD- and FTC-type high performance electro-optic (E-O) chromophores. Gyro bias stability of less than 0.02° h-1 has been demonstrated with these guided-wave components.
Demonstration of pulse controlled all-optical switch/modulator.
Akin, Osman; Dinleyici, M S
2014-03-15
An all-optical pulse controlled switch/modulator based on evanescent coupling between a polymer slab waveguide and a single mode fiber is demonstrated. Very fast all-optical modulation/switching is achieved via Kerr effect of the nonlinear polymer placed in the evanescent region of the optical fiber. Local refractive index perturbation (Δn=-1.45612×10(-5)) on the thin film leads to 0.374 nW power modulation at the fiber output, which results in a switching efficiency of ≈1.5%.
PN-type carrier-induced filter with modulatable extinction ratio.
Fang, Qing; Tu, Xiaoguang; Song, Junfeng; Jia, Lianxi; Luo, Xianshu; Yang, Yan; Yu, Mingbin; Lo, Guoqiang
2014-12-01
We demonstrate the first PN-type carrier-induced silicon waveguide Bragg grating filter on a SOI wafer. The optical extinction ratio of this kind of filter can be efficiently modulated under both reverse and forward biases. The carrier-induced Bragg grating based on a PN junction is fabricated on the silicon waveguide using litho compensation technology. The measured optical bandwidth and the extinction ratio of the filter are 0.45 nm and 19 dB, respectively. The optical extinction ratio modulation under the reverse bias is more than 11.5 dB and it is more than 10 dB under the forward bias. Only 1-dB optical transmission loss is realized in this Bragg grating under a reverse bias. The shifting rates of the central wavelength under forward and reverse biases are ~-1.25 nm/V and 0.01 nm/V, respectively. The 3-dB modulation bandwidth of this filter is 5.1 GHz at a bias of -10 V.
Asryan, Levon V
2017-01-01
The modulation bandwidth of double tunneling-injection (DTI) quantum dot (QD) lasers is studied, taking into account noninstantaneous pumping of QDs. In this advanced type of semiconductor lasers, carriers are first captured from the bulk waveguide region into two-dimensional regions (quantum wells [QWs]); then they tunnel from the QWs into zero-dimensional regions (QDs). The two processes are noninstantaneous and, thus, could delay the delivery of the carriers to the QDs. Here, the modulation bandwidth of DTI QD lasers is calculated as a function of two characteristic times (the capture time from the waveguide region into the QW and the tunneling time from the QW into the QD ensemble) and is shown to increase as either of these times is reduced. The capture and tunneling times of 1 and 0.1 ps, respectively, are shown to characterize fast capture and tunneling processes; as the capture and tunneling times are brought below 1 and 0.1 ps, the bandwidth remains almost unchanged and close to its upper limit.
Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.
Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J
2012-06-15
A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6 dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.
Electric-optic resonant phase modulator
NASA Technical Reports Server (NTRS)
Chen, Chien-Chung (Inventor); Robinson, Deborah L. (Inventor); Hemmati, Hamid (Inventor)
1994-01-01
An electro-optic resonant cavity is used to achieve phase modulation with lower driving voltages. Laser damage thresholds are inherently higher than with previously used integrated optics due to the utilization of bulk optics. Phase modulation is achieved at higher speeds with lower driving voltages than previously obtained with non-resonant electro-optic phase modulators. The instant scheme uses a data locking dither approach as opposed to the conventional sinusoidal locking schemes. In accordance with a disclosed embodiment, a resonant cavity modulator has been designed to operate at a data rate in excess of 100 Mbps. By carefully choosing the cavity finesse and its dimension, it is possible to control the pulse switching time to within 4 ns and to limit the required switching voltage to within 10 V. Experimentally, the resonant cavity can be maintained on resonance with respect to the input laser signal by monitoring the fluctuation of output intensity as the cavity is switched. This cavity locking scheme can be applied by using only the random data sequence, and without the need of additional dithering of the cavity. Compared to waveguide modulators, the resonant cavity has a comparable modulating voltage requirement. Because of its bulk geometry, resonant cavity modulator has the potential of accommodating higher throughput power. Furthermore, mode matching into a bulk device is easier and typically can be achieved with higher efficiency. On the other hand, unlike waveguide modulators which are essentially traveling wave devices, the resonant cavity modulator requires that the cavity be maintained in resonance with respect to the incoming laser signal. An additional control loop is incorporated into the modulator to maintain the cavity on resonance.
NASA Astrophysics Data System (ADS)
Wang, Yongjin; Xu, Yin; Yang, Yongchao; Gao, Xumin; Zhu, Bingcheng; Cai, Wei; Yuan, Jialei; Zhang, Rong; Zhu, Hongbo
2017-03-01
This paper presents the design, fabrication, and experimental characterization of monolithically integrated p-n junction InGaN/GaN multiple quantum well diodes (MQWDs) and suspended waveguides. Suspended MQWDs can be used as transmitters and receivers simultaneously, and suspended waveguides are used for light coupling to create an in-plane visible light communication system. Compared to the waveguide with separation trench, the calculated total light efficiency is increased from 18% to 22% for the continuous waveguide. The MQWDs are characterized by their typical current-voltage performance, and the pulse excitation measurements confirm that the InGaN/GaN MQWDs can achieve the light emission and photodetection at the same time. The photocurrent measurements indicate that the photocurrent is modulated by a bias voltage and that the photons are being supplied from another transmitter. An experimental demonstration is presented showing that the proposed device works well for in-plane full-duplex communication using visible light.
Optical interconnection using polyimide waveguide for multichip module
NASA Astrophysics Data System (ADS)
Koyanagi, Mitsumasa
1996-01-01
We have developed a parallel processor system with 152 RISC processor chips specific for Monte-Carlo analysis. This system has the ring-bus architecture. The performance of several Gflops is expected in this system according to the computer simulation. However, it was revealed that the data transfer speed of the bus has to be increased more dramatically in order to further increase the performance. Then, we propose to introduce the optical interconnection into the parallel processor system to increase the data transfer speed of the buses. The double ringbus architecture is employed in this new parallel processor system with optical interconnection. The free-space optical interconnection arid the optical waveguide are used for the optical ring-bus. Thin polyimide film was used to form the optical waveguide. A relatively low propagation loss was achieved in the polyimide optical waveguide. In addition, it was confirmed that the propagation direction of signal light can be easily changed by using a micro-mirror.
Optical interconnection using polyimide waveguide for multichip module
NASA Astrophysics Data System (ADS)
Koyanagi, Mitsumasa
1996-01-01
We have developed a parallel processor system with 152 RISC processor chips specific for Monte-Carlo analysis. This system has the ring-bus architecture. The performance of several Gflops is expected in this system according to the computer simulation. However, it was revealed that the data transfer speed of the bus has to be increased more dramatically in order to further increase the performance. Then, we propose to introduce the optical interconnection into the parallel processor system to increase the data transfer speed of the buses. The double ring-bus architecture is employed in this new parallel processor system with optical interconnection. The free-space optical interconnection and the optical waveguide are used for the optical ring-bus. Thin polyimide film was used to form the optical waveguide. A relatively low propagation loss was achieved in the polyimide optical waveguide. In addition, it was confirmed that the propagation direction of signal light can be easily changed by using a micro-mirror.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Boyun; Wang, Tao, E-mail: wangtao@hust.edu.cn; Tang, Jian
2014-10-07
We theoretically propose a dynamic and ultrafast group delay tuning mechanism in two microcavities side-coupled to a waveguide system through external optical pump beams. The optical Kerr effect modulation method is applied to improve tuning rate with response time of subpicoseconds or even femtoseconds. The group delay of an all-optical analog to electromagnetically induced transparency effect can be controlled by tuning either the frequency of photonic crystal microcavities or the propagation phase of line waveguide. Group delay is controlled between 5.88 and 70.98 ps by dynamically tuning resonant frequencies of the microcavities. Alternatively, the group delay is controlled between 1.86more » and 12.08 ps by dynamically tuning the propagation phase of line waveguide. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and coupled-mode formalism. Results show a new direction toward microstructure integration optical pulse trapping and all-optical dynamical storage of light devices in optical communication and quantum information processing.« less
InGaN directional coupler made with a one-step etching technique
NASA Astrophysics Data System (ADS)
Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Zhang, Shuai; Shi, Zheng; Li, Xin; Wang, Yongjin
2017-06-01
We propose, fabricate and characterize an on-chip integration of light source, InGaN waveguide, directional coupler and photodiode, in which AlGaN layers are used as top and bottom optical claddings to form an InGaN waveguide for guiding the in-plane emitted light from the InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED). The difference in etch rate caused by different exposure windows leads to an etching depth discrepancy using the one-step etching technique, which forms the InGaN directional coupler with the overlapped underlying slab. Light propagation results directly confirm effective light coupling in the InGaN directional coupler, which is achieved through high-order guided modes. The InGaN waveguide couples the modulated light from the InGaN/GaN MQW-LED and transfers part of light to the coupled waveguide via the InGaN directional coupler. The in-plane InGaN/GaN MQW-photodiode absorbs the guided light by the coupled InGaN waveguide and induces the photocurrent. The on-chip InGaN photonic integration experimentally demonstrates an in-plane light communication with a data transmission of 50 Mbps.
Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers
NASA Astrophysics Data System (ADS)
Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.
2018-02-01
In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.
NASA Astrophysics Data System (ADS)
Balakrishnan, M.; Diemeer, M. B. J.; Driessen, A.; Faccini, M.; Verboom, W.; Reinhoudt, D. N.; Leinse, A.
2006-02-01
Different electro-optic polymer systems are analyzed with respect to their electro-optic activity, glass transition temperature (T g) and photodefinable properties. The polymers tested are polysulfone (PS) and SU8. The electro-optic chromophore, tricyanovinylidenediphenylaminobenzene (TCVDPA), which was reported to have a high photochemical stability 1 has been employed in the current work. Tert-butyl-TCVDPA, having bulky side groups, was synthesized and a doubling of the electro-optic coefficient (r33) compared to the unmodified TCVDPA was shown. A microring resonator design was made based on the PS-TCVDPA system. SU8 (passive) and TCVDPA (active) channel waveguides were fabricated by the photodefinition technique and the passive waveguide losses were measured to be 5 dB/cm at 1550 nm.
Quasi-phase-matched χ(3 )-parametric interactions in sinusoidally tapered waveguides
NASA Astrophysics Data System (ADS)
Saleh, Mohammed F.
2018-01-01
In this article, I show how periodically tapered waveguides can be employed as efficient quasi-phase-matching schemes for four-wave mixing parametric processes in third-order nonlinear materials. As an example, a thorough study of enhancing third-harmonic generation in sinusoidally tapered fibers has been conducted. The quasi-phase-matching condition has been obtained for nonlinear parametric interactions in these structures using Fourier-series analysis. The dependencies of the conversion efficiency of the third harmonic on the modulation amplitude, tapering period, longitudinal-propagation direction, and pump wavelength have been studied. In comparison to uniform waveguides, the conversion efficiency has been enhanced by orders of magnitudes. I envisage that this work will have a great impact in the field of guided nonlinear optics using centrosymmetric materials.
Waveguide-type optical circuits for recognition of optical 8QAM-coded label
NASA Astrophysics Data System (ADS)
Surenkhorol, Tumendemberel; Kishikawa, Hiroki; Goto, Nobuo; Gonchigsumlaa, Khishigjargal
2017-10-01
Optical signal processing is expected to be applied in network nodes. In photonic routers, label recognition is one of the important functions. We have studied different kinds of label recognition methods so far for on-off keying, binary phase-shift keying, quadrature phase-shift keying, and 16 quadrature amplitude modulation-coded labels. We propose a method based on waveguide circuits to recognize an optical eight quadrature amplitude modulation (8QAM)-coded label by simple passive optical signal processing. The recognition of the proposed method is theoretically analyzed and numerically simulated by the finite difference beam propagation method. The noise tolerance is discussed, and bit-error rate against optical signal-to-noise ratio is evaluated. The scalability of the proposed method is also discussed theoretically for two-symbol length 8QAM-coded labels.
Wavelength-tunable waveguides based on polycrystalline organic-inorganic perovskite microwires
NASA Astrophysics Data System (ADS)
Wang, Ziyu; Liu, Jingying; Xu, Zai-Quan; Xue, Yunzhou; Jiang, Liangcong; Song, Jingchao; Huang, Fuzhi; Wang, Yusheng; Zhong, Yu Lin; Zhang, Yupeng; Cheng, Yi-Bing; Bao, Qiaoliang
2016-03-01
Hybrid organic-inorganic perovskites have emerged as new photovoltaic materials with impressively high power conversion efficiency due to their high optical absorption coefficient and long charge carrier diffusion length. In addition to high photoluminescence quantum efficiency and chemical tunability, hybrid organic-inorganic perovskites also show intriguing potential for diverse photonic applications. In this work, we demonstrate that polycrystalline organic-inorganic perovskite microwires can function as active optical waveguides with small propagation loss. The successful production of high quality perovskite microwires with different halogen elements enables the guiding of light with different colours. Furthermore, it is interesting to find that out-coupled light intensity from the microwire can be effectively modulated by an external electric field, which behaves as an electro-optical modulator. This finding suggests the promising applications of perovskite microwires as effective building blocks in micro/nano scale photonic circuits.
Wavelength-tunable waveguides based on polycrystalline organic-inorganic perovskite microwires.
Wang, Ziyu; Liu, Jingying; Xu, Zai-Quan; Xue, Yunzhou; Jiang, Liangcong; Song, Jingchao; Huang, Fuzhi; Wang, Yusheng; Zhong, Yu Lin; Zhang, Yupeng; Cheng, Yi-Bing; Bao, Qiaoliang
2016-03-28
Hybrid organic-inorganic perovskites have emerged as new photovoltaic materials with impressively high power conversion efficiency due to their high optical absorption coefficient and long charge carrier diffusion length. In addition to high photoluminescence quantum efficiency and chemical tunability, hybrid organic-inorganic perovskites also show intriguing potential for diverse photonic applications. In this work, we demonstrate that polycrystalline organic-inorganic perovskite microwires can function as active optical waveguides with small propagation loss. The successful production of high quality perovskite microwires with different halogen elements enables the guiding of light with different colours. Furthermore, it is interesting to find that out-coupled light intensity from the microwire can be effectively modulated by an external electric field, which behaves as an electro-optical modulator. This finding suggests the promising applications of perovskite microwires as effective building blocks in micro/nano scale photonic circuits.
Wavelength-tunable optical ring resonators
Watts, Michael R [Albuquerque, NM; Trotter, Douglas C [Albuquerque, NM; Young, Ralph W [Albuquerque, NM; Nielson, Gregory N [Albuquerque, NM
2009-11-10
Optical ring resonator devices are disclosed that can be used for optical filtering, modulation or switching, or for use as photodetectors or sensors. These devices can be formed as microdisk ring resonators, or as open-ring resonators with an optical waveguide having a width that varies adiabatically. Electrical and mechanical connections to the open-ring resonators are made near a maximum width of the optical waveguide to minimize losses and thereby provide a high resonator Q. The ring resonators can be tuned using an integral electrical heater, or an integral semiconductor junction.
Wavelength-tunable optical ring resonators
Watts, Michael R [Albuquerque, NM; Trotter, Douglas C [Albuquerque, NM; Young, Ralph W [Albuquerque, NM; Nielson, Gregory N [Albuquerque, NM
2011-07-19
Optical ring resonator devices are disclosed that can be used for optical filtering, modulation or switching, or for use as photodetectors or sensors. These devices can be formed as microdisk ring resonators, or as open-ring resonators with an optical waveguide having a width that varies adiabatically. Electrical and mechanical connections to the open-ring resonators are made near a maximum width of the optical waveguide to minimize losses and thereby provide a high resonator Q. The ring resonators can be tuned using an integral electrical heater, or an integral semiconductor junction.
Investigation of evanescent coupling between tapered fiber and a multimode slab waveguide.
Dong, Shaofei; Ding, Hui; Liu, Yiying; Qi, Xiaofeng
2012-04-01
A tapered fiber-slab waveguide coupler (TFSC) is proposed in this paper. Both the numerical analysis based on the beam propagation method and experiments are used for investigating the dependencies of TFSC transmission features on their geometric parameters. From the simulations and experimental results, the rules for fabricating a TFSC with low transmission loss and sharp resonant spectra by optimizing the configuration parameters are presented. The conclusions derived from our work may provide helpful references for optimally designing and fabricating TFSC-based devices, such as sensors, wavelength filters, and intensity modulators.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Field, E.C.; Bloom, R.M.
1993-05-21
In this report the authors use the principal of reciprocity in conjunction with a full-wave propagation code to calculate ground-level fields excited by ionospheric currents modulated at frequencies between 50 and 100 Hz with HF heaters. Their results show the dependence on source orientation, altitude, and dimension and therefore pertain to experiments using the HIPAS or HAARP ionospheric heaters. In the end-fire mode, the waveguide excitation efficiency of an ELF HED in the ionosphere is up to 20 dB greater than for a ground-based antenna, provided its altitude does not exceed 80-to-90 km. The highest efficiency occurs for a sourcemore » altitude of around 70 km; if that altitude is raised to 100 km, the efficiency drops by about 20 dB in the day and 10 dB at night. That efficiency does not account for the greater conductivity modulation that might be achieved at altitudes greater than 70 km, however. The trade-off between the altitude dependencies of the excitation efficiency and maximum achievable modulation depends on the ERP of the HF heater, the optimum altitude increasing with increasing ERP. For HIPAS the best modulation altitude is around 70 km, whereas for HAARP there might be marginal value in modulating at attitudes as high as 100 Km. Ionospheric modification, Ionospheric currents, Ionospheric heating.« less
NASA Astrophysics Data System (ADS)
Fan, Guofang; Li, Yuan; Hu, Chunguang; Lei, Lihua; Guo, Yanchuan
2016-08-01
A novel process to control light through the coupling modulation by surface acoustic wave (SAW) is presented in an optical micro resonator. An optical waveguide modulator of a racetrack resonator on silicon-on-insulator (SOI) technology is took as an example to explore the mechanism. A finite-difference time-domain (FDTD) is developed to simulate the acousto-optical (AO) modulator using the mechanism. An analytical method is presented to verify our proposal. The results show that the process can work well as an optical modulator by SAW.
Sheng, C-X; Singh, S; Gambetta, A; Drori, T; Tong, M; Tretiak, S; Vardeny, Z V
2013-01-01
The development of efficient organic light-emitting diodes (OLED) and organic photovoltaic cells requires control over the dynamics of spin sensitive excitations. Embedding heavy metal atoms in π-conjugated polymer chains enhances the spin-orbit coupling (SOC), and thus facilitates intersystem crossing (ISC) from the singlet to triplet manifolds. Here we use various nonlinear optical spectroscopies such as two-photon absorption and electroabsorption in conjunction with electronic structure calculations, for studying the energies, emission bands and ultrafast dynamics of spin photoexcitations in two newly synthesized π-conjugated polymers that contain intrachain platinum (Pt) atoms separated by one (Pt-1) or three (Pt-3) organic spacer units. The controllable SOC in these polymers leads to a record ISC time of <~1 ps in Pt-1 and ~6 ps in Pt-3. The tunable ultrafast ISC rate modulates the intensity ratio of the phosphorescence and fluorescence emission bands, with potential applications for white OLEDs.
NASA Astrophysics Data System (ADS)
Zhang, Yunhao; Li, Longsheng; Bi, Meihua; Xiao, Shilin
2017-12-01
In this paper, we propose a hybrid analog optical self-interference cancellation (OSIC) and baseband digital SIC (DSIC) system for over-the-air in-band full-duplex (IBFD) wireless communication. Analog OSIC system is based on optical delay line, electro-absorption modulation lasers (EMLs) and balanced photodetector (BPD), which has the properties of high adjusting precision and broad processing bandwidth. With the help of baseband DSIC, the cancellation depth limitation of OSIC can be mitigated so as to achieve deeper total SIC depth. Experimental results show about 20-dB depth by OSIC and 10-dB more depth by DSIC over 1GHz broad baseband, so that the signal of interest (SOI) overlapped by wideband self-interference (SI) signal is better recovered compared to the IBFD system with OSIC or DSIC only. The hybrid of OSIC and DSIC takes advantages of the merits of optical devices and digital processors to achieve deep cancellation depth over broad bandwidth.
Polymeric waveguide array with 45 degree slopes fabricated by bottom side tilted exposure
NASA Astrophysics Data System (ADS)
Lin, Xiaohui; Dou, Xinyuan; Wang, Alan X.; Chen, Ray T.
2011-01-01
This paper demonstrated a practical fabrication process of polymeric waveguide array (12 channels) with 50μm(W)×50μm(H)×23mm(L) dimension and mirror embedded 45° degree slopes for vertical coupling purpose. The entire process contained three main parts: a SU8 pre-mold with 45° slope, a PDMS mold and the final waveguide array device. The key step of fabricating the pre-mold included a bottom side tilted exposure of SU8 photo resist. By placing the sample upside down, tilting by 58.7° and immersing into DI water, the ultraviolet (UV) beam that shined vertically was directed to go through from the bottom of the glass substrate into top side SU8 resist with 45° angle to form the surface. This method was able to guarantee no-gap contact between the mask pattern and the photo resist when exposing. By comparing the process complexity and achieved structure of the top and bottom side exposure, the later was proved to be a promising method for making high quality tilted structure without any tailing effect. The reversed PDMS mold was then fabricated on the SU8 pre-mold. The PDMS mold was used to imprint the cladding layer of the waveguide array. After metal deposition, core filling and top cladding layer coating, the final polymeric waveguide array device was achieved. For performance evaluation, 850nm laser beam from VCSEL was modulated to 10Gbps signals and vertically coupled into the waveguide array. The eye diagrams revealed high Q factor when transmitting signals along these waveguide array.
Li, Zhengxuan; Yi, Lilin; Hu, Weisheng
2014-10-06
In this paper, we propose to use a semiconductor optical amplifier (SOA) in the optical network unit (ONU) to improve the loss budget in time and wavelength division multiplexed-passive optical network (TWDM-PON) systems. The SOA boosts the upstream signal to increase the output power of the electro-absorption modulated laser (EML) and simultaneously pre-amplifies the downstream signal for sensitivity improvement. The penalty caused by cross gain modulation (XGM) effect is negligible due to the low extinction ratio (ER) of upstream signal and the large wavelength difference between upstream and downstream links. In order to achieve a higher output power, the SOA is driven into its saturation region, where the self-phase modulation (SPM) effect converts the intensity into phase information and realizes on-off-keying (OOK) to phase-shifted-keying (PSK) format conversion. In this way, the pattern effect is eliminated, which releases the requirement of gain-clamping on SOA. To further improve the loss budget of upstream link, an Erbium doped fiber amplifier (EDFA) is used in the optical line terminal (OLT) to pre-amplify the received signal. For the downstream direction, directly modulated laser (DML) is used as the laser source. Taking advantage of its carrier-less characteristic, directly modulated signal shows high tolerance to fiber nonlinearity, which could support a downstream launch power as high as + 16 dBm per channel. In addition, the signal is pre-amplified by the SOA in ONU before being detected, so the sensitivity limitation for downstream link is also removed. As a result, a truly passive symmetric 40-Gb/s TWDM-PON was demonstrated, achieving a link loss budget of 51 dB.
NASA Astrophysics Data System (ADS)
Eiselt, Nicklas; Muench, Daniel; Dochhan, Annika; Griesser, Helmut; Eiselt, Michael; Olmos, Juan Jose Vegas; Monroy, Idelfonso Tafur; Elbers, Joerg-Peter
2018-05-01
For a future 5G Ethernet-based fronthaul architecture, 100G trunk lines of a transmission distance up to 10 km standard single mode fiber (SSMF) in combination with cheap grey optics to daisy chain cell site network interfaces are a promising cost- and power-efficient solution. For such a scenario, different intensity modulation and direct detect (IMDD) Formats at a data rate of 112 Gb/s, namely Nyquist four-level pulse amplitude modulation (PAM4), discrete multi-tone Transmission (DMT) and partial-response (PR) PAM4 are experimentally investigated, using a low-cost electro-absorption modulated laser (EML), a 25G driver and current state-of-the-art high Speed 84 GS/s CMOS digital-to-analog converter (DAC) and analog-to-digital converter (ADC) test chips. Each modulation Format is optimized independently for the desired scenario and their digital signal processing (DSP) requirements are investigated. The performance of Nyquist PAM4 and PR PAM4 depend very much on the efficiency of pre- and post-equalization. We show the necessity for at least 11 FFE-taps for pre-emphasis and up to 41 FFE coefficients at the receiver side. In addition, PR PAM4 requires an MLSE with four states to decode the signal back to a PAM4 signal. On the contrary, bit- and power-loading (BL, PL) is crucial for DMT and an FFT length of at least 512 is necessary. With optimized parameters, all Modulation formats result in a very similar performances, demonstrating a transmission distance of up to 10 km over SSMF with bit error rates (BERs) below a FEC threshold of 4.4E-3, allowing error free transmission.
Integrated polymer polarization rotator based on tilted laser ablation
NASA Astrophysics Data System (ADS)
Poulopoulos, Giannis; Kalavrouziotis, Dimitrios; Missinne, Jeroen; Bosman, Erwin; Van Steenberge, Geert; Apostolopoulos, Dimitrios; Avramopoulos, Hercules
2017-02-01
The ubiquitous need for compact, low-cost and mass production photonic devices, for next generation photonic enabled applications, necessitates the development of integrated components exhibiting functionalities that are, to date, carried out by free space elements or standard fiber equipment. The polarization rotator is a typical example of such tendency, as it is a crucial part of the PBS operation of future transceiver modules that leverage polarization multiplexing schemes for increasing the optical network capacity. Up to now, a variety of integrated polarization rotating concepts has been proposed and reported, relying, mainly, on special waveguide crossection configurations for achieving the rotation. Nevertheless, most of those concepts employ SiPh or III-V integration platforms, significantly increasing the fabrication complexity required for customizing the waveguide crossection, which in turn leads to either prohibitively increased cost or compromised quality and performance. In this manuscript we demonstrate the extensive design of a low-cost integrated polymer polarization rotator employing a right-trapezoidal waveguide interfaced to standard square polymer waveguides. First the crossection of the waveguide is defined by calculating and analyzing the components of the hybrid modes excited in the waveguide structure, using a Finite Difference mode solver. Mode overlaps between the fundamental polymer mode and each hybrid mode reveal the optimum lateral offset between the square polymer and the trapezoidal waveguide that ensures both minimum interface loss and maximized polarization rotation performance. The required trapezoidal waveguide length is obtained through EigenMode Expansion (EME) propagation simulations, while more than 95% maximum theoretical conversion efficiency is reported over the entire C-band, resulting to more than 13dB polarization extinction ratio. The polarization rotator design relies on the development of angled polymer waveguide sidewalls, employing the tilted laser ablation technology, currently available at CMST. Therefore, the aforementioned simulation steps adhere fully to the respective design rules, taking into account the anticipated fabrication variations
Adaptive slit beam shaping for direct laser written waveguides.
Salter, P S; Jesacher, A; Spring, J B; Metcalf, B J; Thomas-Peter, N; Simmonds, R D; Langford, N K; Walmsley, I A; Booth, M J
2012-02-15
We demonstrate an improved method for fabricating optical waveguides in bulk materials by means of femtosecond laser writing. We use an LC spatial light modulator (SLM) to shape the beam focus by generating adaptive slit illumination in the pupil of the objective lens. A diffraction grating is applied in a strip across the SLM to simulate a slit, with the first diffracted order mapped onto the pupil plane of the objective lens while the zeroth order is blocked. This technique enables real-time control of the beam-shaping parameters during writing, facilitating the fabrication of more complicated structures than is possible using nonadaptive methods. Waveguides are demonstrated in fused silica with a coupling loss to single-mode fibers in the range of 0.2 to 0.5 dB and propagation loss <0.4 dB/cm.
Controlling soliton refraction in optical lattices.
Prilepsky, Jaroslaw E; Derevyanko, Stanislav A; Gredeskul, Sergey A
2011-08-19
We show in the framework of the 1D nonlinear Schrödinger equation that the value of the refraction angle of a fundamental soliton beam passing through an optical lattice can be controlled by adjusting either the shape of an individual waveguide or the relative positions of the waveguides. In the case of the shallow refractive index modulation, we develop a general approach for the calculation of the refraction angle change. The shape of a single waveguide crucially affects the refraction direction due to the appearance of a structural form factor in the expression for the density of emitted waves. For a lattice of scatterers, wave-soliton interference inside the lattice leads to the appearance of an additional geometric form factor. As a result, the soliton refraction is more pronounced for the disordered lattices than for the periodic ones. © 2011 American Physical Society
Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding
DOE Office of Scientific and Technical Information (OSTI.GOV)
Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing
Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse -1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-opticalmore » modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.« less
NASA Astrophysics Data System (ADS)
Williams, David J.
The present volume on nonlinear optical properties of organic materials discusses organic nonlinear optics, polymers for nonlinear optics, characterization of nonlinear properties, photorefractive and second-order materials, harmonic generation in organic materials, and devices and applications. Particular attention is given to organic semiconductor-doped polymer glasses as novel nonlinear media, heterocyclic nonlinear optical materials, loss measurements in electrooptic polymer waveguides, the phase-matched second-harmonic generation in planar waveguides, electrooptic measurements in poled polymers, transient effects in spatial light modulation by nonlinearity-absorbing molecules, the electrooptic effects in organic single crystals, surface acoustic wave propagation in an organic nonlinear optical crystal, nonlinear optics of astaxanthin thin films; and advanced high-temperature polymers for integrated optical waveguides. (No individual items are abstracted in this volume)
Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding
Meng, Chao; Yu, Shao-Liang; Wang, Hong -Qing; ...
2015-11-06
Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse -1 (peak power ~1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-opticalmore » modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ~3.2 W.« less
NASA Astrophysics Data System (ADS)
Yilmaz, Y. A.; Tandogan, S. E.; Hayran, Z.; Giden, I. H.; Turduev, M.; Kurt, H.
2017-07-01
Integrated photonic systems require efficient, compact, and broadband solutions for strong light coupling into and out of optical waveguides. The present work investigates an efficient optical power transferring the problem between optical waveguides having different widths of in/out terminals. We propose a considerably practical and feasible concept to implement and design an optical coupler by introducing gradually index modulation to the coupler section. The index profile of the coupler section is modulated with a Gaussian function by the help of striped waveguides. The effective medium theory is used to replace the original spatially varying index profile with dielectric stripes of a finite length/width having a constant effective refractive index. 2D and 3D finite-difference time-domain analyzes are utilized to investigate the sampling effect of the designed optical coupler and to determine the parameters that play a crucial role in enhancing the optical power transfer performance. Comparing the coupling performance of conventional benchmark adiabatic and butt couplers with the designed striped waveguide coupler, the corresponding coupling efficiency increases from approximately 30% to 95% over a wide frequency interval. In addition, to realize the realistic optical coupler appropriate to integrated photonic applications, the proposed structure is numerically designed on a silicon-on-insulator wafer. The implemented SOI platform based optical coupler operates in the telecom wavelength regime (λ = 1.55 μm), and the dimensions of the striped coupler are kept as 9.77 μm (along the transverse to propagation direction) and 7.69 μm (along the propagation direction) where the unit distance is fixed to be 465 nm. Finally, to demonstrate the operating design principle, the microwave experiments are conducted and the spot size conversion ratio as high as 7.1:1 is measured, whereas a coupling efficiency over 60% in the frequency range of 5.0-16.0 GHz has been also demonstrated.
NASA Astrophysics Data System (ADS)
Raring, James W.
The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high-saturation power receiver structures represent the state-of-the-art technologies for even discrete components. Using the novel integration technology, we present the first widely-tunable single-chip device capable of transmit and receive functionality at 40 Gb/s. This device monolithically integrates tunable lasers, EAMs, SOAs, and photodetectors with performance that rivals optimized discrete components. The high-flexibility integration scheme requires only simple blanket regrowth steps and thus breaks the performance versus yield trade-off plaguing conventional fabrication techniques employed for high-functionality PICs.
Xu, Junjie; Hou, Lianping; Deng, Qiufang; Han, Liangshun; Liang, Song; Marsh, John H; Zhu, Hongliang
2016-07-06
We report a monolithic photonic integrated circuit (PIC) for THz communication applications. The PIC generates up to 4 optical frequency lines which can be mixed in a separate device to generate THz radiation, and each of the optical lines can be modulated individually to encode data. Physically, the PIC comprises an array of wavelength tunable distributed feedback lasers each with its own electro-absorption modulator. The lasers are designed with a long cavity to operate with a narrow linewidth, typically <4 MHz. The light from the lasers is coupled via an multimode interference (MMI) coupler into a semiconductor optical amplifier (SOA). By appropriate selection and biasing of pairs of lasers, the optical beat signal can be tuned continuously over the range from 0.254 THz to 2.723 THz. The EAM of each channel enables signal leveling balanced between the lasers and realizing data encoding, currently at data rates up to 6.5 Gb/s. The PIC is fabricated using regrowth-free techniques, making it economic for volume applications, such for use in data centers. The PIC also has a degree of redundancy, making it suitable for applications, such as inter-satellite communications, where high reliability is mandatory.
Xu, Lin; Ophir, Noam; Menard, Michael; Lau, Ryan Kin Wah; Turner-Foster, Amy C; Foster, Mark A; Lipson, Michal; Gaeta, Alexander L; Bergman, Keren
2011-06-20
We experimentally demonstrate four-wave-mixing (FWM)-based continuous wavelength conversion of optical differential-phase-shift-keyed (DPSK) signals with large wavelength conversion ranges as well as simultaneous wavelength conversion of dual-wavelength channels with mixed modulation formats in 1.1-cm-long dispersion-engineered silicon waveguides. We first validate up to 100-nm wavelength conversion range for 10-Gb/s DPSK signals, showcasing the capability to perform phase-preserving operations at high bit rates in chip-scale devices over wide conversion ranges. We further validate the wavelength conversion of dual-wavelength channels modulated with 10-Gb/s packetized phase-shift-keyed (PSK) and amplitude-shift-keyed (ASK) signals; demonstrate simultaneous operation on multiple channels with mixed formats in chip-scale devices. For both configurations, we measure the spectral and temporal responses and evaluate the performances using bit-error-rate (BER) measurements.
Color waveguide transparent screen using lens array holographic optical element
NASA Astrophysics Data System (ADS)
Liu, Siqi; Sun, Peng; Wang, Chang; Zheng, Zhenrong
2017-11-01
A color transparent screen was designed in this paper, a planar glass was used as a waveguide structure and the lens array holographic optical element (HOE) was used as a display unit. The lens array HOE was exposed by two coherent beams. One was the reference wave which directly illuminated on the holographic material and the other was modulated by the micro lens array. The lens array HOE can display the images with see-through abilities. Unlike the conventional lens array HOE, a planar glass was adopted as the waveguide in the experiment. The projecting light was totally internal-reflected in the planar glass to eliminate the undesired zero-order diffracted light. By using waveguide, it also brings advantage of compact structure. Colorful display can be realized in our system as the holographic materials were capable for multi-wavelength display. In this paper, a color transparent screen utilizing the lens array HOE and waveguide were designed. Experiment results showed a circular display area on the transparent screen. The diameter of the area is 20 mm and it achieved the pixel resolution of 100 μm. This simple and effective method could be an alternative in the augment reality (AR) applications, such as transparent phone and television.
The automated system for technological process of spacecraft's waveguide paths soldering
NASA Astrophysics Data System (ADS)
Tynchenko, V. S.; Murygin, A. V.; Emilova, O. A.; Bocharov, A. N.; Laptenok, V. D.
2016-11-01
The paper solves the problem of automated process control of space vehicles waveguide paths soldering by means of induction heating. The peculiarities of the induction soldering process are analyzed and necessity of information-control system automation is identified. The developed automated system makes the control of the product heating process, by varying the power supplied to the inductor, on the basis of information about the soldering zone temperature, and stabilizing the temperature in a narrow range above the melting point of the solder but below the melting point of the waveguide. This allows the soldering process automating to improve the quality of the waveguides and eliminate burn-troughs. The article shows a block diagram of a software system consisting of five modules, and describes the main algorithm of its work. Also there is a description of the waveguide paths automated soldering system operation, for explaining the basic functions and limitations of the system. The developed software allows setting of the measurement equipment, setting and changing parameters of the soldering process, as well as view graphs of temperatures recorded by the system. There is shown the results of experimental studies that prove high quality of soldering process control and the system applicability to the tasks of automation.
Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Wu, Qiang; Sang, Xinzhu; Farrell, Gerald; Yu, Chongxiu; Li, Feng; Tam, Hwa Yaw; Wai, P. K. A.
2014-01-01
All-optical analog-to-digital converters based on the third-order nonlinear effects in silicon waveguide are a promising candidate to overcome the limitation of electronic devices and are suitable for photonic integration. In this paper, a 2-bit optical spectral quantization scheme for on-chip all-optical analog-to-digital conversion is proposed. The proposed scheme is realized by filtering the broadened and split spectrum induced by the self-phase modulation effect in a silicon horizontal slot waveguide filled with silicon-nanocrystal. Nonlinear coefficient as high as 8708 W−1/m is obtained because of the tight mode confinement of the horizontal slot waveguide and the high nonlinear refractive index of the silicon-nanocrystal, which provides the enhanced nonlinear interaction and accordingly low power threshold. The results show that a required input peak power level less than 0.4 W can be achieved, along with the 1.98-bit effective-number-of-bit and Gray code output. The proposed scheme can find important applications in on-chip all-optical digital signal processing systems. PMID:25417847
Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Wu, Qiang; Sang, Xinzhu; Farrell, Gerald; Yu, Chongxiu; Li, Feng; Tam, Hwa Yaw; Wai, P K A
2014-11-24
All-optical analog-to-digital converters based on the third-order nonlinear effects in silicon waveguide are a promising candidate to overcome the limitation of electronic devices and are suitable for photonic integration. In this paper, a 2-bit optical spectral quantization scheme for on-chip all-optical analog-to-digital conversion is proposed. The proposed scheme is realized by filtering the broadened and split spectrum induced by the self-phase modulation effect in a silicon horizontal slot waveguide filled with silicon-nanocrystal. Nonlinear coefficient as high as 8708 W(-1)/m is obtained because of the tight mode confinement of the horizontal slot waveguide and the high nonlinear refractive index of the silicon-nanocrystal, which provides the enhanced nonlinear interaction and accordingly low power threshold. The results show that a required input peak power level less than 0.4 W can be achieved, along with the 1.98-bit effective-number-of-bit and Gray code output. The proposed scheme can find important applications in on-chip all-optical digital signal processing systems.
NASA Astrophysics Data System (ADS)
Brusberg, Lars; Lang, Günter; Schröder, Henning
2011-01-01
The proposed novel packaging approach merges micro-system packaging and glass integrated optics. It provides 3D optical single-mode intra system links to bridge the gap between novel photonic integrated circuits and the glass fibers for inter system interconnects. We introduce our hybrid 3D photonic packaging approach based on thin glass substrates with planar integrated optical single-mode waveguides for fiber-to-chip and chip-to-chip links. Optical mirrors and lenses provide optical mode matching for photonic IC assemblies and optical fiber interconnects. Thin glass is commercially available in panel and wafer formats and characterizes excellent optical and high-frequency properties as reviewed in the paper. That makes it perfect for micro-system packaging. The adopted planar waveguide process based on ion-exchange technology is capable for high-volume manufacturing. This ion-exchange process and the optical propagation are described in detail for thin glass substrates. An extensive characterization of all basic circuit elements like straight and curved waveguides, couplers and crosses proves the low attenuation of the optical circuit elements.
Fabrication and Characterization of Thermo-Optic Mach-Zehnder Silicon Modulator
NASA Astrophysics Data System (ADS)
Park, Yeongho
This thesis focuses on the modeling, design, and fabrication of the Thermo-Optic Mach-Zehnder Modulator, which is one of the simple active devices in silicon photonics. The Mach-Zehnder interferometer (MZI) was formed as an optical path on a silicon on insulator (SOI) wafer of 2040+/-80 nm thick, and the thermo-optic effect was used to modulate the infrared light of 1553 nm wavelength by controlling the temperature of the one arm of the MZI. To fabricate and understand the Si photonic device, the whole process from theory to the measurement setup is introduced. Additionally, all the fabrication details and some informative experiments which were performed during the fabrication are discussed for students who will study the more developed devices. The width of the designed waveguide is 4 mum, but the width of the fabricated waveguide is 3.0+/-0.2 mum due to the isotropic etching. For the lithography for both patterning waveguides and metal contacts, the AZ 5214 photoresist was used, and the details of the lithography was discussed. Furthermore, the lift-off method was performed and introduced to solve the over-etching problem. The fabricated metal contacts can withstand up to 1.6W, and the electric power 0.3W is required to make Pi phase difference according to the simulation result by the simulation software Lumerical. The optical output of the device was not detected due to the huge losses from the sidewall roughness and the insertion loss, so it is discussed in the experimental measurement chapter.
Interleaved arrays antenna technology development
NASA Technical Reports Server (NTRS)
1986-01-01
Phase one and two of a program to further develop and investigate advanced graphite epoxy waveguides, radiators, and components with application to space antennas are discussed. The objective of the two phases were to demonstrate mechanical integrity of a small panel of radiators and parts procured under a previous contract and to develop alternate designs and applications of the technology. Most of the emphasis was on the assembly and test of a 5 x 5 element module. This effort was supported by evaluation of adhesives and waveguide joint configurations. The evaluation and final assembly considered not only mechanical performance but also producibility in large scale.
100 GHz pulse waveform measurement based on electro-optic sampling
NASA Astrophysics Data System (ADS)
Feng, Zhigang; Zhao, Kejia; Yang, Zhijun; Miao, Jingyuan; Chen, He
2018-05-01
We present an ultrafast pulse waveform measurement system based on an electro-optic sampling technique at 1560 nm and prepare LiTaO3-based electro-optic modulators with a coplanar waveguide structure. The transmission and reflection characteristics of electrical pulses on a coplanar waveguide terminated with an open circuit and a resistor are investigated by analyzing the corresponding time-domain pulse waveforms. We measure the output electrical pulse waveform of a 100 GHz photodiode and the obtained rise times of the impulse and step responses are 2.5 and 3.4 ps, respectively.
Design and analysis of photonic optical switches with improved wavelength selectivity
NASA Astrophysics Data System (ADS)
Wielichowski, Marcin; Patela, Sergiusz
2005-09-01
Efficient optical modulators and switches are the key elements of the future all-optical fiber networks. Aside from numerous advantages, the integrated optical devices suffer from excessive longitudinal dimensions. The dimensions may be significantly reduced with help of periodic structures, such as Bragg gratings, arrayed waveguides or multilayer structures. In this paper we describe methods of analysis and example of analytical results of a photonic switch with properties modified by the application of periodic change of effective refractive index. The switch is composed of a strip-waveguide directional coupler and a transversal Bragg grating.
NASA Astrophysics Data System (ADS)
Zakhidov, É. A.; Kasymdzhanov, M. A.; Mirtadzhiev, F. M.; Tartakovskiĭ, G. Kh; Khabibullaev, P. K.
1988-12-01
A study was made of the influence of the Kerr nonlinearity of a fiber waveguide on fluctuations of the output signal from a fiber-optic interferometer. The intensity fluctuations were modeled using the radiation from a pulsed high-power laser with a controlled intensity and pulse profile. Interferograms of the output radiation were obtained for different interferometer configurations. A comparison of the experiment and theory made it possible to explain the observed changes in the signal and to estimate the phase noise due to the Kerr nonlinearity in the investigated fiber waveguide.
Optical modulation in silicon-vanadium dioxide photonic structures
NASA Astrophysics Data System (ADS)
Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.
2017-08-01
All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.
NASA Astrophysics Data System (ADS)
Bányász, I.; Berneschi, S.; Lohner, T.; Fried, M.; Petrik, P.; Khanh, N. Q.; Zolnai, Z.; Watterich, A.; Bettinelli, M.; Brenci, M.; Nunzi-Conti, G.; Pelli, S.; Righini, G. C.; Speghini, A.
2010-05-01
Slab waveguides were fabricated in Er-doped tungsten-tellurite glass and CaF2 crystal samples via ion implantation. Waveguides were fabricated by implantation of MeV energy N+ ions at the Van de Graaff accelerator of the Research Institute for Particle and Nuclear Physics, Budapest, Hungary. Part of the samples was annealed. Implantations were carried out at energies of 1.5 MeV (tungsten-tellurite glass) and 3.5 MeV (CaF2). The implanted doses were between 5 x 1012 and 8 x 1016 ions/cm2. Refractive index profile of the waveguides was measured using SOPRA ES4G and Woollam M-2000DI spectroscopic ellipsometers at the Research Institute for Technical Physics and Materials Science, Budapest. Functionality of the waveguides was tested using a home-made instrument (COMPASSO), based on m-line spectroscopy and prism coupling technique, which was developed at the Materials and Photonics Devices Laboratory (MDF Lab.) of the Institute of Applied Physics in Sesto Fiorentino, Italy. Results of both types of measurements were compared to depth distributions of nuclear damage in the samples, calculated by SRIM 2007 code. Thicknesses of the guiding layer and of the implanted barrier obtained by spectroscopic ellipsometry correspond well to SRIM simulations. Irradiationinduced refractive index modulation saturated around a dose of 8 x 1016 ions/cm2 in tungsten-tellurite glass. Annealing of the implanted waveguides resulted in a reduction of the propagation loss, but also reduced the number of supported guiding modes at the lower doses. We report on the first working waveguides fabricated in an alkali earth halide crystal implanted by MeV energy medium-mass ions.
Integrated optical isolators using magnetic surface plasmon (Presentation Recording)
NASA Astrophysics Data System (ADS)
Shimizu, Hiromasa; Kaihara, Terunori; Umetsu, Saori; Hosoda, Masashi
2015-09-01
Optical isolators are one of the essential components to protect semiconductor laser diodes (LDs) from backward reflected light in integrated optics. In order to realize optical isolators, nonreciprocal propagation of light is necessary, which can be realized by magnetic materials. Semiconductor optical isolators have been strongly desired on Si and III/V waveguides. We have developed semiconductor optical isolators based on nonreciprocal loss owing to transverse magneto-optic Kerr effect, where the ferromagnetic metals are deposited on semiconductor optical waveguides1). Use of surface plasmon polariton at the interface of ferromagnetic metal and insulator leads to stronger optical confinement and magneto-optic effect. It is possible to modulate the optical confinement by changing the magnetic field direction, thus optical isolator operation is proposed2, 3). We have investigated surface plasmons at the interfaces between ferrimagnetic garnet/gold film, and applications to waveguide optical isolators. We assumed waveguides composed of Au/Si(38.63nm)/Ce:YIG(1700nm)/Si(220nm)/Si , and calculated the coupling lengths between Au/Si(38.63nm)/Ce:YIG plasmonic waveguide and Ce:YIG/Si(220nm)/Si waveguide for transversely magnetized Ce:YIG with forward and backward directions. The coupling length was calculated to 232.1um for backward propagating light. On the other hand, the coupling was not complete, and the length was calculated to 175.5um. The optical isolation by using the nonreciprocal coupling and propagation loss was calculated to be 43.7dB when the length of plasmonic waveguide is 700um. 1) H. Shimizu et al., J. Lightwave Technol. 24, 38 (2006). 2) V. Zayets et al., Materials, 5, 857-871 (2012). 3) J. Montoya, et al, J. Appl. Phys. 106, 023108, (2009).
Liu, Yuhan; Lu, Keding; Dong, Huabin; Li, Xin; Cheng, Peng; Zou, Qi; Wu, Yusheng; Liu, Xingang; Zhang, Yuanhang
2016-05-01
In the last four decades, various techniques including spectroscopic, wet chemical and mass spectrometric methods, have been developed and applied for the detection of ambient nitrous acid (HONO). We developed a HONO detection system based on long path photometry which consists of three independent modules i.e., sampling module, fluid propulsion module and detection module. In the propulsion module, solenoid pumps are applied. With solenoid pumps the pulsed flow can be computer controlled both in terms of pump stroke volume and pulse frequency, which enables the attainment of a very stable flow rate. In the detection module, a customized Liquid Waveguide Capillary Cell (LWCC) is used. The customized LWCC pre-sets the optical fiber in-coupling with the liquid wave guide, providing the option of fast startup and easy maintenance of the absorption photometry. In summer 2014, our system was deployed in a comprehensive campaign at a rural site in the North China Plain. More than one month of high quality HONO data spanning from the limit of detection to 5ppb were collected. Intercomparison of our system with another established system from Forschungszentrum Juelich is presented and discussed. In conclusion, our instrument achieved a detection limit of 10pptV within 2min and a measurement uncertainty of 7%, which is well suited for investigation of the HONO budget from urban to rural conditions in China. Copyright © 2016. Published by Elsevier B.V.
Multistage WDM access architecture employing cascaded AWGs
NASA Astrophysics Data System (ADS)
El-Nahal, F. I.; Mears, R. J.
2009-03-01
Here we propose passive/active arrayed waveguide gratings (AWGs) with enhanced performance for system applications mainly in novel access architectures employing cascaded AWG technology. Two technologies were considered to achieve space wavelength switching in these networks. Firstly, a passive AWG with semiconductor optical amplifiers array, and secondly, an active AWG. Active AWG is an AWG with an array of phase modulators on its arrayed-waveguides section, where a programmable linear phase-profile or a phase hologram is applied across the arrayed-waveguide section. This results in a wavelength shift at the output section of the AWG. These architectures can address up to 6912 customers employing only 24 wavelengths, coarsely separated by 1.6 nm. Simulation results obtained here demonstrate that cascaded AWGs access architectures have a great potential in future local area networks. Furthermore, they indicate for the first time that active AWGs architectures are more efficient in routing signals to the destination optical network units than passive AWG architectures.
Tunable high-channel-count bandstop graphene plasmonic filters based on plasmon induced transparency
NASA Astrophysics Data System (ADS)
Zhang, Zhengren; Long, Yang; Ma, Pengyu; Li, Hongqiang
2017-11-01
A high-channel-count bandstop graphene plasmonic filter based on ultracompact plasmonic structure is proposed in this paper. It consists of graphene waveguide side-coupled with a series of graphene filtering units. The study shows that the waveguide-resonator system performs a multiple plasmon induced transparency (PIT) phenomenon. By carefully adjusting the Fermi level of the filtering units, any two adjacent transmitted dips which belong to different PIT units can produce coherent coupling superposition enhancement. This property prevents the attenuation of the high-frequency transmission dips of multiple PIT and leads to an excellent bandstop filter with multiple channels. Specifically, the bandwidth and modulation depth of the filters can be flexibly adjusted by tuning the Fermi energy of the graphene waveguide. This ultracompact plasmonic structure contributes to the achievement of frequency division multiplexing systems for optical computing and communications in highly integrated optical circuits.
NASA Astrophysics Data System (ADS)
Wei, Qi; Tian, Ye; Zuo, Shu-Yu; Cheng, Ying; Liu, Xiao-Jun
2017-03-01
Acoustic topological states support sound propagation along the boundary in a one-way direction with inherent robustness against defects and disorders, leading to the revolution of the manipulation on acoustic waves. A variety of acoustic topological states relying on circulating fluid, chiral coupling, or temporal modulation have been proposed theoretically. However, experimental demonstration has so far remained a significant challenge, due to the critical limitations such as structural complexity and high losses. Here, we experimentally demonstrate an acoustic anomalous Floquet topological insulator in a waveguide network. The acoustic gapless edge states can be found in the band gap when the waveguides are strongly coupled. The scheme features simple structure and high-energy throughput, leading to the experimental demonstration of efficient and robust topologically protected sound propagation along the boundary. The proposal may offer a unique, promising application for design of acoustic devices in acoustic guiding, switching, isolating, filtering, etc.
Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers
Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie
2014-01-01
We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796
Compact Feeding Network for Array Radiations of Spoof Surface Plasmon Polaritons
NASA Astrophysics Data System (ADS)
Xu, Jun Jun; Yin, Jia Yuan; Zhang, Hao Chi; Cui, Tie Jun
2016-03-01
We propose a splitter feeding network for array radiations of spoof surface plasmon polaritons (SPPs), which are guided by ultrathin corrugated metallic strips. Based on the coupled mode theory, SPP fields along a single waveguide in a certain frequency range can be readily coupled into two adjacent branch waveguides with the same propagation constants. We propose to load U-shaped particles anti-symmetrically at the ends of such two branch waveguides, showing a high integration degree of the feeding network. By controlling linear phase modulations produced by the U-shaped particle chain, we demonstrate theoretically and experimentally that the SPP fields based on bound modes can be efficiently radiated to far fields in broadside direction. The proposed method shows that the symmetry of electromagnetic field modes can be exploited to the SPP transmission network, providing potential solutions to compact power dividers and combiners for microwave and optical devices and systems.
Weakly modulated silicon-dioxide-cladding gratings for silicon waveguide Fabry-Pérot cavities.
Grote, Richard R; Driscoll, Jeffrey B; Biris, Claudiu G; Panoiu, Nicolae C; Osgood, Richard M
2011-12-19
We show by theory and experiment that silicon-dioxide-cladding gratings for Fabry-Pérot cavities on silicon-on-insulator channel ("wire") waveguides provide a low-refractive-index perturbation, which is required for several important integrated photonics components. The underlying refractive index perturbation of these gratings is significantly weaker than that of analogous silicon gratings, leading to finer control of the coupling coefficient κ. Our Fabry-Pérot cavities are designed using the transfer-matrix method (TMM) in conjunction with the finite element method (FEM) for calculating the effective index of each waveguide section. Device parameters such as coupling coefficient, κ, Bragg mirror stop band, Bragg mirror reflectivity, and quality factor Q are examined via TMM modeling. Devices are fabricated with representative values of distributed Bragg reflector lengths, cavity lengths, and propagation losses. The measured transmission spectra show excellent agreement with the FEM/TMM calculations.
10th International Conference of Computational Methods in Sciences and Engineering
2014-12-22
Density Modulation ", in the 10th International Conference of Computational Methods in Sciences and Engineering (ICCMSE 2014), April 4-7, 2014, Athens...ENGINEERING We organized the symposium, “Electronic Transport Properties in the Presence of Density Modulation ,” in the 10th International...Superlattices by Coplanar Waveguide Dr. Endo reported his recent experimental work on thermoelectric power of two-dimensional electron gases in the quantum
Quadratic electro-optic effects and electro-absorption process in multilayer nanoshells
NASA Astrophysics Data System (ADS)
Bahari, Ali; Rahimi Moghadam, Fereshteh
2011-07-01
In this corrigendum, the authors would like to report typographic errors in the first name of the second author and in equation 7. The details of these errors can be found in the PDF. The authors would like to express their sincere apologies for these errors in the article.
Application of laser speckle to randomized numerical linear algebra
NASA Astrophysics Data System (ADS)
Valley, George C.; Shaw, Thomas J.; Stapleton, Andrew D.; Scofield, Adam C.; Sefler, George A.; Johannson, Leif
2018-02-01
We propose and simulate integrated optical devices for accelerating numerical linear algebra (NLA) calculations. Data is modulated on chirped optical pulses and these propagate through a multimode waveguide where speckle provides the random projections needed for NLA dimensionality reduction.
NASA Astrophysics Data System (ADS)
Sun, DeGui
2013-09-01
In a silicon-on-insulator (SOI) waveguide corner mirror (WCM) structure, with the quantum process of a frustrated total internal reflection (FTIR) phenomenon and the time delay principle in the two-dimensional potential barrier tunneling process of a mass of particles, we derive an accurate physical model for the Goos-Hanchen (GH) shift of optical guided-mode in the FTIR process, and in principle match the GH shift jumping states with the independent guided-modes. Then, we propose and demonstrate a new regime of 1 × N digital optical switches with a matching state between the free-carrier dispersion (FCD) based refractive index modulation (RIM) of silicon to create a GH shift jumping function of a photonic signal at the reflecting interface and the independent guided-modes in the FTIR process, where a MOS-capacitor type electro-optic modulation regime is proposed and discussed to realize an effective FCD-based RIM. At the critical matching state, i.e., the incident of an optical beam is at the vicinity of Brewster angle in the WCM, a mini-change of refractive index of waveguide material can cause a great jump of GH shift along the FTIR reflecting interface, and further a 1 × N digital optical switching process could be realized. For a 350-500 nm single-mode rib waveguide made on the 220 nm CMOS-compatible SOI substrate and with the FCD effect based RIM of silicon crystal, a concentration variation of 1018-1019 cm-3 has caused a 0.5-2.5 μm GH shift of reflected beam, which is at 2-5 times of a mode-size and hence radically convinces an optical switching function with a 1 × 3-1 × 10 scale.
Investigation of direct integrated optics modulators. [applicable to data preprocessors
NASA Technical Reports Server (NTRS)
Batchman, T. E.
1980-01-01
Direct modulation techniques applicable to integrated optics data preprocessors were investigated. Several methods of modulating a coherent optical beam by interaction with an incoherent beam were studied. It was decided to investigate photon induced conductivity changes in thin semiconductor cladding layers on optical waveguides. Preliminary calculations indicate significant changes can be produced in the phase shift in a propagating wave when the conductivity is changed by ten percent or more. Experimental devices to verify these predicted phase changes and experiments designed to prove the concept are described.
Scaling vectors of attoJoule per bit modulators
NASA Astrophysics Data System (ADS)
Sorger, Volker J.; Amin, Rubab; Khurgin, Jacob B.; Ma, Zhizhen; Dalir, Hamed; Khan, Sikandar
2018-01-01
Electro-optic modulation performs the conversion between the electrical and optical domain with applications in data communication for optical interconnects, but also for novel optical computing algorithms such as providing nonlinearity at the output stage of optical perceptrons in neuromorphic analog optical computing. While resembling an optical transistor, the weak light-matter-interaction makes modulators 105 times larger compared to their electronic counterparts. Since the clock frequency for photonics on-chip has a power-overhead sweet-spot around tens of GHz, ultrafast modulation may only be required in long-distance communication, not for short on-chip links. Hence, the search is open for power-efficient on-chip modulators beyond the solutions offered by foundries to date. Here, we show scaling vectors towards atto-Joule per bit efficient modulators on-chip as well as some experimental demonstrations of novel plasmonic modulators with sub-fJ/bit efficiencies. Our parametric study of placing different actively modulated materials into plasmonic versus photonic optical modes shows that 2D materials overcompensate their miniscule modal overlap by their unity-high index change. Furthermore, we reveal that the metal used in plasmonic-based modulators not only serves as an electrical contact, but also enables low electrical series resistances leading to near-ideal capacitors. We then discuss the first experimental demonstration of a photon-plasmon-hybrid graphene-based electro-absorption modulator on silicon. The device shows a sub-1 V steep switching enabled by near-ideal electrostatics delivering a high 0.05 dB V-1 μm-1 performance requiring only 110 aJ/bit. Improving on this demonstration, we discuss a plasmonic slot-based graphene modulator design, where the polarization of the plasmonic mode aligns with graphene’s in-plane dimension; where a push-pull dual-gating scheme enables 2 dB V-1 μm-1 efficient modulation allowing the device to be just 770 nm short for 3 dB small signal modulation. Lastly, comparing the switching energy of transistors to modulators shows that modulators based on emerging materials and plasmonic-silicon hybrid integration perform on-par relative to their electronic counter parts. This in turn allows for a device-enabled two orders-of-magnitude improvement of electrical-optical co-integrated network-on-chips over electronic-only architectures. The latter opens technological opportunities in cognitive computing, dynamic data-driven applications systems, and optical analog computer engines including neuromorphic photonic computing.
Cross-linked polyimides for integrated optics
NASA Astrophysics Data System (ADS)
Singer, Kenneth D.; Kowalczyk, Tony C.; Nguyen, Hung D.; Beuhler, Allyson J.; Wargowski, David A.
1997-01-01
We have investigated a promising class of polyimide materials for both passive and active electro-optic devices, namely crosslinkable polyimides. These fluorinated polyimides are soluble in the imidized form and are both thermally and photo-crosslinkable leading to easy processability into waveguide structures and the possibility of stable electro-optic properties. We have fabricated channel and slab waveguides and investigated the mechanism of optical propagation loss using photothermal deflection spectroscopy and waveguide loss spectroscopy, and found the losses to arise from residual absorption due to the formation of charge transfer states. The absorption is inhibited by fluorination leading to propagation losses as low as 0.3 dB/cm in the near infrared. Because of the ability to photocrosslink, channel waveguides are fabricated using a simple wet-etch process. Channel waveguides so formed are observed to have no excess loss over slab structures. Solubility followed by thermal cross-linking allows the formation of multilayer structures. We have produced electro-optic polymers by doping with the nonlinear optical chromophores, DCM and DADC; and a process of concurrent poling and thermal crosslinking. Multilayer structures have been investigated and poling fields optimized in the active layer by doping the cladding with an anti-static agent. The high glass-transition temperature and cross-linking leads to very stable electro-optic properties. We are currently building electro-optic modulators based on these materials. Progress and results in this area also are reported.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Scott, Jeffrey Wayne
An RFID backscatter interrogator for transmitting data to an RFID tag, generating a carrier for the tag, and receiving data from the tag modulated onto the carrier, the interrogator including a single grounded-coplanar wave-guide circuit board and at least one surface mount integrated circuit supported by the circuit board.
Giddings, R P; Hugues-Salas, E; Tang, J M
2012-08-27
Record high 19.125 Gb/s real-time end-to-end dual-band optical OFDM (OOFDM) transmission is experimentally demonstrated, for the first time, in a simple electro-absorption modulated laser (EML)-based 25 km standard SMF system using intensity modulation and direct detection (IMDD). Adaptively modulated baseband (0-2GHz) and passband (6.125 ± 2GHz) OFDM RF sub-bands, supporting line rates of 10 Gb/s and 9.125 Gb/s respectively, are independently generated and detected with FPGA-based DSP clocked at only 100 MHz and DACs/ADCs operating at sampling speeds as low as 4GS/s. The two OFDM sub-bands are electrically frequency-division-multiplexed (FDM) for intensity modulation of a single optical carrier by an EML. To maximize and balance the signal transmission performance of each sub-band, on-line adaptive features and on-line performance monitoring is fully exploited to optimize key OOFDM transceiver and system parameters, which includes subcarrier characteristics within each individual OFDM sub-band, total and relative sub-band power as well as EML operating conditions. The achieved 19.125 Gb/s over 25 km SMF OOFDM transmission system has an optical power budget of 13.5 dB, and shows almost identical bit error rate (BER) performances for both the baseband and passband signals. In addition, experimental investigations also indicate that the maximum achievable transmission capacity of the present system is mainly determined by the EML frequency chirp-enhanced chromatic dispersion effect, and the passband BER performance is not affected by the two sub-band-induced intermixing effect, which, however, gives a 1.2dB optical power penalty to the baseband signal transmission.
Hybrid-integrated coherent receiver using silica-based planar lightwave circuit technology
NASA Astrophysics Data System (ADS)
Kim, Jong-Hoi; Choe, Joong-Seon; Choi, Kwang-Seong; Youn, Chun-Ju; Kim, Duk-Jun; Jang, Sun-Hyok; Kwon, Yong-Hwan; Nam, Eun-Soo
2011-12-01
A hybrid-integrated coherent receiver module has been achieved using flip-chip bonding technology, consisting of a silica-based 90°-hybrid planar lightwave circuit (PLC) platform, a spot-size converter integrated waveguide photodiode (SSC-WG-PD), and a dual-channel transimpedance amplifier (TIA). The receiver module shows error-free operation up to 40Gb/s and OSNR sensitivity of 11.5 dB for BER = 10-3 at 25 Gb/s.
Multichannel homodyne receiver
Landt, Jeremy A.
1982-01-01
A homodyne radar transmitter/receiver device which produces a single combined output which contains modulated backscatter information for all phase conditions of both modulated and unmodulated backscatter signals. The device utilizes taps along coaxial transmission lines, strip transmission line, and waveguides which are spaced by 1/8 wavelength or 1/6 wavelength, etc. This greatly reduces costs by eliminating separate transmission and reception antennas and an expensive arrangement of power splitters and mixers utilized in the prior art.
Multichannel homodyne receiver
Landt, J.A.
1981-01-19
A homodyne radar transmitter/receiver device which produces a single combined output which contains modulated backscatter information for all phase conditions of both modulated and unmodulated backscatter signals is described. The device utilizes taps along coaxial transmission lines, strip transmission line, and waveguides which are spaced by 1/8 wavelength or 1/6 wavelength, etc. This greatly reduces costs by eliminating separate transmission and reception antennas and an expensive arrangement of power splitters and mixers utilized in the prior art.
Application of the strongly coupled-mode theory to integrated optical devices
NASA Technical Reports Server (NTRS)
Chuang, Shun-Lien
1987-01-01
A theory for strongly coupled waveguides is discussed and applied to two- and three-waveguide couplers and optical wavelength filters. This theory makes use of an exact analytical relation governing the coupling coefficients and the overlap integrals. It removes almost all of the constraints imposed by a simpler and approximate coupled-mode theory by Marcatili (1986). It also satisfies the energy conservation and the reciprocity theorem self-consistently. Very good numerical results with the overlap integral as large as 49 percent are shown. The applications to electrooptical modulators, power dividers, power transfer devices, and optical filters are all presented with numerical results.
Design and simulation of a planar micro-optic free-space receiver
NASA Astrophysics Data System (ADS)
Nadler, Brett R.; Hallas, Justin M.; Karp, Jason H.; Ford, Joseph E.
2017-11-01
We propose a compact directional optical receiver for free-space communications, where a microlens array and micro-optic structures selectively couple light from a narrow incidence angle into a thin slab waveguide and then to an edge-mounted detector. A small lateral translation of the lenslet array controls the coupled input angle, enabling the receiver to select the transmitter source direction. We present the optical design and simulation of a 10mm x 10mm aperture receiver using a 30μm thick silicon waveguide able to couple up to 2.5Gbps modulated input to a 10mm x 30μm wide detector.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tripathi, Deepak; Uma, R.; Tripathi, V. K.
A relativistic electron beam propagating through a dielectric lined waveguide, with ripple on the dielectric surface, excites a free electron laser type instability where ripple acts as a wiggler. The spatial modulation of permittivity in the ripple region couples a terahertz radiation mode to a driven mode of lower phase velocity, where the beam is in Cerenkov resonance with the slow mode. Both the modes grow at the expanse of beam energy. The terahertz frequency increases as the beam velocity increases. The growth rate of the instability goes as one third power of beam density.
Spectrum Gaps of Spin Waves Generated by Interference in a Uniform Nanostripe Waveguide
Wang, Qi; Zhang, Huaiwu; Ma, Guokun; Liao, Yulong; Tang, Xiaoli; Zhong, Zhiyong
2014-01-01
We studied spin waves excited by two or more excitation sources in a uniform nanostripe waveguide without periodic structures. Several distinct spectrum gaps formed by spin waves interference rather than by Bragg reflection were observed. We found the center frequency and the number of spectrum gaps of spin waves can be controlled by modulating the distance, number and width of the excitation sources. The results obtained by micromagnetic simulations agree well with that of analytical calculations. Our work therefore paves a new way to control the spectrum gaps of spin waves, which is promising for future spin wave-based devices. PMID:25082001
Fiberless multicolor neural optoelectrode for in vivo circuit analysis.
Kampasi, Komal; Stark, Eran; Seymour, John; Na, Kyounghwan; Winful, Herbert G; Buzsáki, György; Wise, Kensall D; Yoon, Euisik
2016-08-03
Maximizing the potential of optogenetic approaches in deep brain structures of intact animals requires optical manipulation of neurons at high spatial and temporal resolutions, while simultaneously recording electrical data from those neurons. Here, we present the first fiber-less optoelectrode with a monolithically integrated optical waveguide mixer that can deliver multicolor light at a common waveguide port to achieve multicolor modulation of the same neuronal population in vivo. We demonstrate successful device implementation by achieving efficient coupling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via a gradient-index (GRIN) lens. The use of GRIN lenses attains several design features, including high optical coupling and thermal isolation between ILDs and waveguides. We validated the packaged devices in the intact brain of anesthetized mice co-expressing Channelrhodopsin-2 and Archaerhodopsin in pyramidal cells in the hippocampal CA1 region, achieving high quality recording, activation and silencing of the exact same neurons in a given local region. This fully-integrated approach demonstrates the spatial precision and scalability needed to enable independent activation and silencing of the same or different groups of neurons in dense brain regions while simultaneously recording from them, thus considerably advancing the capabilities of currently available optogenetic toolsets.
Interferometric fiber optic displacement sensor
Farah, J.
1999-04-06
A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically. 23 figs.
Interferometric fiber optic displacement sensor
Farah, J.
1995-05-30
A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically. 29 figs.
Interferometric fiber optic displacement sensor
Farah, John
1995-01-01
A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically.
Interferometric fiber optic displacement sensor
Farah, John
1999-01-01
A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically.
Polymer/silica hybrid integration waveguide Bragg grating based on surface plasmon polaritons.
Tian, Liang; Wang, Fei; Wu, Yuanda; Sun, Xiaoqiang; Yi, Yunji; Zhang, Daming
2018-05-01
We proposed a device composed of a Bragg grating and a long-range surface plasmon polariton waveguide. The waveguide is formed by embedding a thin Au stripe in negative UV photoresist (SU-8 2005). The corrugated grating structure is created on a silica substrate using contact lithography and inductively coupled plasma etching, which is transferred onto the SU-8 2005 film by a spin coating process, producing a periodic modulation of refractive index along the waveguide. We achieve a transmission peak with an extinction ratio of 17 dB and a 3-dB bandwidth of 0.9 nm at a wavelength of 1575.2 nm. We achieve a reflection peak with a side-mode suppression ratio of 9.7 dB, a 3-dB bandwidth of 0.9 nm at a wavelength of 1575.2 nm when the heating electrode isn't working. The shift of the reflection peak with heating power over the range 0-6 mW is approximately 2.9 nm. This thermal dependence exhibits an average slope of -0.48 nm/mW.
NASA Astrophysics Data System (ADS)
Olivares, Irene; Angelova, Todora I.; Pinilla-Cienfuegos, Elena; Sanchis, Pablo
2016-05-01
The electro-optic Pockels effect may be generated in silicon photonics structures by breaking the crystal symmetry by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. In this work, the influence of the waveguide parameters on the strain distribution and its overlap with the optical mode to enhance the Pockels effect has been analyzed. The optimum waveguide structure have been designed based on the definition and quantification of a figure of merit. The fabrication of highly stressing SiN layers by PECVD has also been optimized to characterize the designed structures. The residual stress has been controlled during the growth process by analyzing the influence of the main deposition parameters. Therefore, two identical samples with low and high stress conditions were fabricated and electro-optically characterized to test the induced Pockels effect and the influence of carrier effects. Electro-optical modulation was only measured in the sample with the high stressing SiN layer that could be attributed to the Pockels effect. Nevertheless, the influence of carriers were also observed thus making necessary additional experiments to decouple both effects.
NASA Astrophysics Data System (ADS)
Chang, Daniel H.
The development of high speed polymer electro-optic modulators has seen steady and significant progress in recent years, enabling novel applications in RF-Photonics. Two of these are described in this Thesis: an Opto-Electronic Oscillator (OEO), which is a hybrid RF and optical oscillator capable of high spectral purity, and Photonic Time-Stretch, which is a signal processing technique for waveform spectral shifting with application to photonically-assisted A/D conversion. In both cases, the operating frequencies achieved have been the highest demonstrated to date. Application of this promising material to more complicated devices, however, is stymied by insertion loss performance. Current loss figures, while acceptable for single modulators, are too high for large arrays of modulators or intrinsically long devices such as AWGs or photonic-RF phase shifters. This is especially frustrating in light of a key virtue which polymers possess as a photonic material: its photolithographic process-ability makes patterning complex devices possible. Indeed, the current ascendancy of silica-based waveguide devices can be attributed largely to the same reason. In this Thesis, we also demonstrate the first hybrid device composed of silica planar lightwave circuits (PLCs) and polymer planar waveguides. Our approach utilizes grayscale lithography to enable vertical coupling between polymer and silica layers, minimizing entanglement of their respective fabrication processes. We have achieved coupling excess loss figures on the order of 1dB. We believe this is the natural next step in the development of electro-optic polymer devices. The two technologies are highly complementary. Silica PLCs, with excellent propagation loss and fiber coupling, are ideally suited for long passive waveguiding. By endowing them with the high-speed phase shifting capability offered by polymers, active wideband photonic devices of increasing complexity and array size can be contemplated.
NASA Technical Reports Server (NTRS)
Saunier, P.; Nelson, S.
1983-01-01
Sixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.
NASA Astrophysics Data System (ADS)
Hadjloum, Massinissa; El Gibari, Mohammed; Li, Hongwu; Daryoush, Afshin S.
2017-06-01
A large performance improvement of polymer phase modulators is reported by using buried in-plane coupled microstrip (CMS) driving electrodes, instead of standard vertical Micro-Strip electrodes. The in-plane CMS driving electrodes have both low radio frequency (RF) losses and high overlap integral between optical and RF waves compared to the vertical designs. Since the optical waveguide and CMS electrodes are located in the same plane, optical injection and microwave driving access cannot be separated perpendicularly without intersection between them. A via-less transition between grounded coplanar waveguide access and CMS driving electrodes is introduced in order to provide broadband excitation of optical phase modulators and avoid the intersection of the optical core and the electrical probe. Simulation and measurement results of the benzocyclobutene polymer as a cladding material and the PMMI-CPO1 polymer as an optical core with an electro-optic coefficient of 70 pm/V demonstrate a broadband operation of 67 GHz using travelling-wave driving electrodes with a half-wave voltage of 4.5 V, while satisfying its low RF losses and high overlap integral between optical and RF waves of in-plane CMS electrodes.
Rogers, C E; Carini, J L; Pechkis, J A; Gould, P L
2010-01-18
We utilize various techniques to characterize the residual phase modulation of a waveguide-based Mach-Zehnder electro-optical intensity modulator. A heterodyne technique is used to directly measure the phase change due to a given change in intensity, thereby determining the chirp parameter of the device. This chirp parameter is also measured by examining the ratio of sidebands for sinusoidal amplitude modulation. Finally, the frequency chirp caused by an intensity pulse on the nanosecond time scale is measured via the heterodyne signal. We show that this chirp can be largely compensated with a separate phase modulator. The various measurements of the chirp parameter are in reasonable agreement.
An AWG-based 10 Gbit/s colorless WDM-PON system using a chirp-managed directly modulated laser
NASA Astrophysics Data System (ADS)
Latif, Abdul; Yu, Chong-xiu; Xin, Xiang-jun; Husain, Aftab; Hussain, Ashiq; Munir, Abid; Khan, Yousaf
2012-09-01
We propose an arrayed waveguide grating (AWG)-based 10 Gbit/s per channel full duplex wavelength division multiplexing passive optical network (WDM-PON). A chirp managed directly modulated laser with return-to-zero (RZ) differential phase shift keying (DPSK) modulation technique is utilized for downlink (DL) direction, and then the downlink signal is re-modulated for the uplink (UL) direction using intensity modulation technique with the data rate of 10 Gbit/s per channel. A successful WDM-PON transmission operation with the data rate of 10 Gbit/s per channel over a distance of 25 km without any optical amplification or dispersion compensation is demonstrated with low power penalty.
Using carrier-depletion silicon modulators for optical power monitoring.
Yu, Hui; Korn, Dietmar; Pantouvaki, Marianna; Van Campenhout, Joris; Komorowska, Katarzyna; Verheyen, Peter; Lepage, Guy; Absil, Philippe; Hillerkuss, David; Alloatti, Luca; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim
2012-11-15
Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.
20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption.
Matsuo, Shinji; Shinya, Akihiko; Chen, Chin-Hui; Nozaki, Kengo; Sato, Tomonari; Kawaguchi, Yoshihiro; Taniyama, Hideaki; Notomi, Masaya
2011-01-31
We have demonstrated an ultracompact buried heterostructure photonic crystal (PhC) laser, consisting of an InGaAsP-based active region (5.0 x 0.3 x 0.15 μm3) buried in an InP layer. By employing a buried heterostructure with an InP layer, we can greatly improve thermal resistance and carrier confinement. We therefore achieved a low threshold input power of 6.8 μW and a maximum output power in the output waveguide of -10.3 dBm by optical pumping. The output light is effectively coupled to the output waveguide with a high external differential quantum efficiency of 53%. We observed a clear eye opening for a 20-Gbit/s NRZ signal modulation with an absorbed input power of 175.2 μW, resulting in an energy cost of 8.76 fJ/bit. This is the smallest reported energy cost for any type of semiconductor laser.
NASA Astrophysics Data System (ADS)
Inoshita, Kensuke; Hama, Yoshimitsu; Kishikawa, Hiroki; Goto, Nobuo
2016-12-01
In photonic label routers, various optical signal processing functions are required; these include optical label extraction, recognition of the label, optical switching and buffering controlled by signals based on the label information and network routing tables, and label rewriting. Among these functions, we focus on photonic label recognition. We have proposed two kinds of optical waveguide circuits to recognize 16 quadrature amplitude modulation codes, i.e., recognition from the minimum output port and from the maximum output port. The recognition function was theoretically analyzed and numerically simulated by finite-difference beam-propagation method. We discuss noise tolerance in the circuit and show numerically simulated results to evaluate bit-error-rate (BER) characteristics against optical signal-to-noise ratio (OSNR). The OSNR required to obtain a BER less than 1.0×10-3 for the symbol rate of 2.5 GBaud was 14.5 and 27.0 dB for recognition from the minimum and maximum output, respectively.
A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits
NASA Astrophysics Data System (ADS)
Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.
A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
NASA Astrophysics Data System (ADS)
Amin, Rubab; Suer, Can; Ma, Zhizhen; Sarpkaya, Ibrahim; Khurgin, Jacob B.; Agarwal, Ritesh; Sorger, Volker J.
2017-10-01
Electro-optic modulation is a key function in optical data communication and possible future optical computing engines. The performance of modulators intricately depends on the interaction between the actively modulated material and the propagating waveguide mode. While high-performing modulators were demonstrated before, the approaches were taken as ad-hoc. Here we show the first systematic investigation to incorporate a holistic analysis for high-performance and ultra-compact electro-optic modulators on-chip. We show that intricate interplay between active modulation material and optical mode plays a key role in the device operation. Based on physical tradeoffs such as index modulation, loss, optical confinement factors and slow-light effects, we find that bias-material-mode regions exist where high phase modulation and high loss (absorption) modulation is found. This work paves the way for a holistic design rule of electro-optic modulators for on-chip integration.
Fibre Optic Gyroscope Developments Using Integrated Optic Components
NASA Astrophysics Data System (ADS)
Minford, W. J.; DePaula, R. M.
1988-09-01
The sensing of rotation using counterpropagating optical beams in a fiber loop (the SAGNAC effect) has gone through extensive developments and demonstrations since first proved feasible by Vali and Shorthilll in 1976. The interferometric fiber gyroscope minimum configuration2 which uses a common input-output port and single-mode filter was developed to provide the extreme high stability necessary to reach the sensitivities at low rotation rates attainable with current state-of-the-art detectors. The simplicity and performance of this configuration has led to its acceptance and wide-spread use. In order to increase the mechanical stability of this system, all single-mode fiber components are employed and a further advancement to integrated optics has enabled most of the optical functions to be placed on a single mass-producible substrate. Recent improvements in the components (eg polarization maintaining fiber and low coherence sources) have further enhanced the performance of the minimum configuration gyro. This presentation focused on the impact of LiNbO3 integrated optic components on gyroscope developments. The use of Ti-indiffused LiNbO3 waveguide optical circuits in interferometric fiber optic gyroscopes has taken two directions: to utilize only the phase modulator, or to combine many of the minimum configuration optical functions on the electro-optic substrate. The high-bandwidth phase modulator is the driving force for using LiNbO3 waveguide devices. This device allows both biasing the gyro for maximum sensitivity and closing the loop via frequency shifting, for example, thus increasing the dynamic range of the gyro and the linearity of the scale factor. Efforts to implement most of the minimum configuration optical functions onto a single LiNbO3 substrate have been led by Thomson CSF.3 They have demonstrated an interferometric gyroscope with excellent performance using a LiNbO3 optical circuit containing a Y-splitter, phase modulator, and surface-resonant polarizer. JPL and AT&T-BL have an effort, under a NASA contract, to investigate other integrated optic gyro front-end circuits with the eventual goal of combining all minimum configuration functions on a single substrate. The performance of a gyroscope with a LiNbO3 polarizer, 3dB splitter, and phase modulator was discussed along with the waveguide device characteristics. The key advantages, future trends, and present issues involved with using LiNbO3 waveguide devices in a gyroscope were addressed.
NASA Astrophysics Data System (ADS)
Rezem, Maher; Kelb, Christian; Günther, Axel; Rahlves, Maik; Reithmeier, Eduard; Roth, Bernhard
2016-03-01
Micro-optical sensors based on optical waveguides are widely used to measure temperature, force and strain but also to detect biological and chemical substances such as explosives or toxins. While optical micro-sensors based on silicon technology require complex and expensive process technologies, a new generation of sensors based completely on polymers offer advantages especially in terms of low-cost and fast production techniques. We have developed a process to integrate micro-optical components such as embedded waveguides and optical interconnects into polymer foils with a thickness well below one millimeter. To enable high throughput production, we employ hot embossing technology, which is capable of reel-to-reel fabrication with a surface roughness in the optical range. For the waveguide fabrication, we used the thermoplastic polymethylmethacrylate (PMMA) as cladding and several optical adhesives as core materials. The waveguides are characterized with respect to refractive indices and propagation losses. We achieved propagation losses are as low as 0.3 dB/cm. Furthermore, we demonstrate coupling structures and their fabrication especially suited to integrate various light sources such as vertical-cavity surface-emitting lasers (VCSEL) and organic light emitting diodes (OLED) into thin polymer foils. Also, we present a concept of an all-polymer and waveguide based deformation sensor based on intensity modulation, which can be fabricated by utilizing our process. For future application, we aim at a low-cost and high-throughput reel-to-reel production process enabling the fabrication of large sensor arrays or disposable single-use sensing structures, which will open optical sensing to a large variety of application fields ranging from medical diagnosis to automotive sensing.
Zhang, Yi-long; Liu, Le; Guo, Jun; Zhang, Peng-fei; Guo, Ji-hua; Ma, Hui; He, Yong-hong
2015-02-01
Surface plasmon resonance (SPR) sensors with spectral interrogation can adopt fiber to transmit light signals, thus leaving the sensing part separated, which is very convenient for miniaturization, remote-sensing and on-site analysis. Symmetrical optical waveguide (SOW) SPR has the same refractive index of the-two buffer media layers adjacent to the metal film, resulting in longer propagation distance, deeper penetration depth and better performance compared to conventional SPR In the present paper, we developed a symmetrical optical, waveguide (SOW) SPR sensor with wavelength interrogation. In the system, MgF2-Au-MgF2 film was used as SOW module for glucose sensing, and a fiber based light source and detection was used in the spectral interrogation. In the experiment, a refractive index resolution of 2.8 x 10(-7) RIU in fluid protocol was acquired. This technique provides advantages of high resolution and could have potential use in compact design, on-site analysis and remote sensing.
Pu, Mingbo; Ma, Xiaoliang; Zhao, Zeyu; Li, Xiong; Wang, Yanqin; Gao, Hui; Hu, Chenggang; Gao, Ping; Wang, Changtao; Luo, Xiangang
2015-07-10
The orbital angular momentum (OAM) of light, as an emerging hotspot in optics and photonics, introduces many degrees of freedom for applications ranging from optical communication and quantum processing to micromanipulation. To achieve a high degree of integration, optical circuits for OAM light are essential, which are, however, challenging in the optical regime owing to the lack of well-developed theory. Here we provide a scheme to guide and collimate the OAM beam at the micro- and nano-levels. The coaxial plasmonic slit was exploited as a naturally occurring waveguide for light carrying OAM. Concentric grooves etched on the output surface of the coaxial waveguide were utilized as a plasmonic metasurface to couple the OAM beam to free space with greatly increased beam directivity. Experimental results at λ = 532 nm validated the novel transportation and collimating effect of the OAM beam. Furthermore, dynamic tuning of the topological charges was demonstrated by using a liquid crystal spatial light modulator (SLM).
NASA Astrophysics Data System (ADS)
Pu, Mingbo; Ma, Xiaoliang; Zhao, Zeyu; Li, Xiong; Wang, Yanqin; Gao, Hui; Hu, Chenggang; Gao, Ping; Wang, Changtao; Luo, Xiangang
2015-07-01
The orbital angular momentum (OAM) of light, as an emerging hotspot in optics and photonics, introduces many degrees of freedom for applications ranging from optical communication and quantum processing to micromanipulation. To achieve a high degree of integration, optical circuits for OAM light are essential, which are, however, challenging in the optical regime owing to the lack of well-developed theory. Here we provide a scheme to guide and collimate the OAM beam at the micro- and nano-levels. The coaxial plasmonic slit was exploited as a naturally occurring waveguide for light carrying OAM. Concentric grooves etched on the output surface of the coaxial waveguide were utilized as a plasmonic metasurface to couple the OAM beam to free space with greatly increased beam directivity. Experimental results at λ = 532 nm validated the novel transportation and collimating effect of the OAM beam. Furthermore, dynamic tuning of the topological charges was demonstrated by using a liquid crystal spatial light modulator (SLM).
Pu, Mingbo; Ma, Xiaoliang; Zhao, Zeyu; Li, Xiong; Wang, Yanqin; Gao, Hui; Hu, Chenggang; Gao, Ping; Wang, Changtao; Luo, Xiangang
2015-01-01
The orbital angular momentum (OAM) of light, as an emerging hotspot in optics and photonics, introduces many degrees of freedom for applications ranging from optical communication and quantum processing to micromanipulation. To achieve a high degree of integration, optical circuits for OAM light are essential, which are, however, challenging in the optical regime owing to the lack of well-developed theory. Here we provide a scheme to guide and collimate the OAM beam at the micro- and nano-levels. The coaxial plasmonic slit was exploited as a naturally occurring waveguide for light carrying OAM. Concentric grooves etched on the output surface of the coaxial waveguide were utilized as a plasmonic metasurface to couple the OAM beam to free space with greatly increased beam directivity. Experimental results at λ = 532 nm validated the novel transportation and collimating effect of the OAM beam. Furthermore, dynamic tuning of the topological charges was demonstrated by using a liquid crystal spatial light modulator (SLM). PMID:26159423
NASA Astrophysics Data System (ADS)
Huang, Pei-Nian; Xia, Sheng-Xuan; Fu, Guang-Lai; Liang, Mei-Zhen; Qin, Meng; Zhai, Xiang; Wang, Ling-Ling
2018-03-01
In this paper, we propose a structure composed of two graphene waveguides and dual coupled graphene ring resonators (GRRs) to achieve a plasmon-induced absorption (PIA) effect. A three-level plasmonic system and a temporal coupled mode theory (CMT) are utilized to verify the simulation results. Moreover, a double-window-PIA effect can be conveniently attained by introducing another GRR with proper parameters to meet more specific acquirement in optical modulation process. The pronounced PIA resonances can be tuned in a number of ways, such as by adjusting the coupling distance between the GRRs and the couplings between the GRR and the waveguide, and tuning the radius and the Fermi energy of the GRRs. Besides, the produced PIA effect shows a high group delay up to - 1 . 87 ps, exhibiting a particularly prominent fast-light feature. Our results have potential applications in the realization of THz-integrated spectral control and graphene plasmonic devices such as sensors, filters, ultra-fast optical switches and so on.
Coupling of lithium niobate disk resonators to integrated waveguides
NASA Astrophysics Data System (ADS)
Berneschi, S.; Cosi, F.; Nunzi Conti, G.; Pelli, S.; Soria, S.; Righini, G. C.; Dispenza, M.; Secchi, A.
2011-01-01
Whispering gallery mode (WGM) disk resonators fabricated in single crystals can have high Q factors within their transparency bandwidth and may have application both in fundamental and applied optics. Lithium niobate (LN) resonators thanks to their electro-optical properties may be used in particular as tunable filters, modulators, and delay lines. A critical step toward the actual application of these devices is the implementation of a robust and efficient coupling system. High index prisms are typically used for this purpose. In this work we demonstrate coupling to high-Q WGM LN disks from an integrated optical LN waveguide. The waveguides are made by proton exchange in X-cut LN. The disks with diameters of about 5 mm and thickness of 1 mm are made from commercial Z-cut LN wafers by core drilling a cylinder and thereafter polishing the edges into a spheroidal profile. Both resonance linewidth and cavity photon lifetime measurements were performed to calculate the Q factor of the resonator, which is in excess of 108.
Resent Status of ITER Equatorial Launcher Development
DOE Office of Scientific and Technical Information (OSTI.GOV)
Takahashi, K.; Kajiwara, K.; Kasugai, A.
2009-11-26
The ITER equatorial launcher is divided into a front shield and a port plug. The front shield is composed of fourteen blanket shield modules so as to form three openings for the injection of mm-wave beams into plasma. Twenty-four waveguide transmission lines, internal shields, cooling pipes and so on are installed in the port plug. The transmission lines consist of the corrugated waveguides, miter bends and the free space propagation region utilizing two mirrors in front of the waveguide outlet. The analysis of mm-wave beam propagation in the region shows that the transmission efficiency more than 99.5% is attained. Themore » high power experiments of the launcher mock-up have been carried out and the measured field patterns at each mirror and the outlet of the launcher are agreed with the calculations. It is concluded that the transmission line components in the launcher mock-up are fabricated as designed and the present mm-wave design in the launcher is feasible.« less
Polymeric variable optical attenuators based on magnetic sensitive stimuli materials
NASA Astrophysics Data System (ADS)
de Pedro, S.; Cadarso, V. J.; Ackermann, T. N.; Muñoz-Berbel, X.; Plaza, J. A.; Brugger, J.; Büttgenbach, S.; Llobera, A.
2014-12-01
Magnetically-actuable, polymer-based variable optical attenuators (VOA) are presented in this paper. The design comprises a cantilever which also plays the role of a waveguide and the input/output alignment elements for simple alignment, yet still rendering an efficient coupling. Magnetic properties have been conferred to these micro-opto-electromechanical systems (MOEMS) by implementing two different strategies: in the first case, a magnetic sensitive stimuli material (M-SSM) is obtained by a combination of polydimethylsiloxane (PDMS) and ferrofluid (FF) in ratios between 14.9 wt % and 29.9 wt %. An M-SSM strip under the waveguide-cantilever, defined with soft lithography (SLT), provides the required actuation capability. In the second case, specific volumes of FF are dispensed at the end of the cantilever tip (outside the waveguide) by means of inkjet printing (IJP), obtaining the required magnetic response while holding the optical transparency of the waveguide-cantilever. In the absence of a magnetic field, the waveguide-cantilever is aligned with the output fiber optics and thus the intrinsic optical losses can be obtained. Numerical simulations, validated experimentally, have shown that, for any cantilever length, the VOAs defined by IJP present lower intrinsic optical losses than their SLT counterparts. Under an applied magnetic field (Bapp), both VOA configurations experience a misalignment between the waveguide-cantilever and the output fiber optics. Thus, the proposed VOAs modulate the output power as a function of the cantilever displacement, which is proportional to Bapp. The experimental results for the three different waveguide-cantilever lengths and six different FF concentrations (three per technology) show maximum deflections of 220 µm at 29.9 wt % of FF for VOASLT and 250 µm at 22.3 wt % FF for VOAIJP, at 0.57 kG for both. These deflections provide maximum actuation losses of 16.1 dB and 18.9 dB for the VOASLT and VOAIJP, respectively.
Analysis and design of optically pumped far infrared oscillators and amplifiers
NASA Technical Reports Server (NTRS)
Galantowicz, T. A.
1978-01-01
A waveguide laser oscillator was designed and experimental measurements made of relationships among output power, pressure, pump power, pump frequency, cavity tuning, output beam pattern, and cavity mirror properties for various active gases. A waveguide regenerative amplifier was designed and gain measurements were made for various active gases. An external Fabry-Perot interferometer was fabricated and used for accurate wavelength determination and for measurements of the refractive indices of solids transparent in the far infrared. An electronic system was designed and constructed to provide an appropriate error signal for use in feedback control of pump frequency. Pump feedback from the FIR laser was decoupled using a vibrating mirror to phase modulate the pump signal.
A preliminary design of the Ti:LiNbO3 optical channel waveguide
NASA Astrophysics Data System (ADS)
Choi, Yat
1992-03-01
One of the goals of technology-based activities within the Electronic Warfare Division is to facilitate the development within Australia, of facilities and a capability to manufacture sophisticated, highspeed electro-optic devices, in particular, the integrated optical amplitude modulator and integrated optical switch, for use in microwave and millimetre-wave systems for the Australian Defense Force (ADF). An initial step towards this goal would be to produce a low-loss and single-mode propagation optical channel waveguide using titanium-indiffused lithium niobate (Ti:LiNbO3). As no dimensions and fabrication parameters have yet been optimized, this technical report provides preliminary design data which optimizes these parameters.
Attenuation, dispersion and nonlinearity effects in graphene-based waveguides
Mota, João Cesar Moura; Sombra, Antonio Sergio Bezerra
2015-01-01
Summary We simulated and analyzed in detail the behavior of ultrashort optical pulses, which are typically used in telecommunications, propagating through graphene-based nanoribbon waveguides. In this work, we showed the changes that occur in the Gaussian and hyperbolic secant input pulses due to the attenuation, high-order dispersive effects and nonlinear effects. We concluded that it is possible to control the shape of the output pulses with the value of the input signal power and the chemical potential of the graphene nanoribbon. We believe that the obtained results will be highly relevant since they can be applied to other nanophotonic devices, for example, filters, modulators, antennas, switches and other devices. PMID:26171299
Haner, M; Warren, W S
1987-09-01
We have produced complex software adjustable laser pulse shapes with ~10-ps resolution, and pulse energies up to 100 microJ for spectroscopic applications. The key devices are a high damage threshold electrooptic directional coupler and a GaAs circuit for synthesizing arbitrarily shaped microwave pulses.
NASA Astrophysics Data System (ADS)
Huang, Daming
1990-01-01
In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.
W-band Heterodyne Receiver Module with 27 K Noise Temperature
NASA Technical Reports Server (NTRS)
Gawande, R.; Reeves, R.; Cleary, K.; Readhead, A. C.; Gaier, T.; Kangaslahti, P.; Samoska, L.; Church, S.; Sieth, M.; Voll, P.;
2012-01-01
We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using 35nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.
2007-05-22
HAARP ) HF transmitter in Gakona, Alaska, and detected after propagating more than 4400 km in the Earth-ionosphere waveguide to Midway Atoll. The...conductivity variation (created by modulated HF heating) and radiating 4–32 W. The HF-ELF conversion efficiency at HAARP is thus estimated to be...Program ( HAARP ) research station in Gakona, Alaska. The HAARP HF transmitter (or heater), which JOURNAL OF GEOPHYSICAL RESEARCH, VOL. 112, A05309, doi
Fiberless multicolor neural optoelectrode for in vivo circuit analysis
Kampasi, Komal; Stark, Eran; Seymour, John; Na, Kyounghwan; Winful, Herbert G.; Buzsáki, György; Wise, Kensall D.; Yoon, Euisik
2016-01-01
Maximizing the potential of optogenetic approaches in deep brain structures of intact animals requires optical manipulation of neurons at high spatial and temporal resolutions, while simultaneously recording electrical data from those neurons. Here, we present the first fiber-less optoelectrode with a monolithically integrated optical waveguide mixer that can deliver multicolor light at a common waveguide port to achieve multicolor modulation of the same neuronal population in vivo. We demonstrate successful device implementation by achieving efficient coupling between a side-emitting injection laser diode (ILD) and a dielectric optical waveguide mixer via a gradient-index (GRIN) lens. The use of GRIN lenses attains several design features, including high optical coupling and thermal isolation between ILDs and waveguides. We validated the packaged devices in the intact brain of anesthetized mice co-expressing Channelrhodopsin-2 and Archaerhodopsin in pyramidal cells in the hippocampal CA1 region, achieving high quality recording, activation and silencing of the exact same neurons in a given local region. This fully-integrated approach demonstrates the spatial precision and scalability needed to enable independent activation and silencing of the same or different groups of neurons in dense brain regions while simultaneously recording from them, thus considerably advancing the capabilities of currently available optogenetic toolsets. PMID:27485264
NASA Astrophysics Data System (ADS)
Kaltenbach, André; Hofmann, Julian; Seidel, Dirk; Lauritsen, Kristian; Bugge, Frank; Fricke, Jörg; Paschke, Katrin; Erdmann, Rainer; Tränkle, Günther
2017-02-01
A miniaturized picosecond pulsed semiconductor laser source in the spectral range around 560nm is realized by integrating a frequency doubled distributed Bragg reflector ridge waveguide laser (DBR-RWL) into a micromodule. Such compact laser sources are suitable for mobile application, e.g. in microscopes. The picosecond optical pulses are generated by gain-switching which allows for arbitrary pulse repetition frequencies. For frequency conversion a periodically poled magnesium doped lithium niobate ridge waveguide crystal (PPLN) is used to provide high conversion efficiency with single-pass second harmonic generation (SHG). The coupling of the pulsed radiation into the PPLN crystal is realized by a GRIN-lens. Such types of lenses collect the divergent laser radiation and focus it into the crystal waveguide providing high coupling efficiency at a minimum of space compared to the usage of fast axis collimator(FAC)/slow axis collimator (SAC) lens combinations. The frequency doubled output pulses show a pulse width of about 60 ps FWHM and a spectral width around 0.06nm FWHM at a central wavelength of 557nm at 15Å. The pulse peak power could be determined to be more than 300mW at a repetition frequency of 40 MHz.
DAPHNE silicon photonics technological platform for research and development on WDM applications
NASA Astrophysics Data System (ADS)
Baudot, Charles; Fincato, Antonio; Fowler, Daivid; Perez-Galacho, Diego; Souhaité, Aurélie; Messaoudène, Sonia; Blanc, Romuald; Richard, Claire; Planchot, Jonathan; De-Buttet, Come; Orlando, Bastien; Gays, Fabien; Mezzomo, Cécilia; Bernard, Emilie; Marris-Morini, Delphine; Vivien, Laurent; Kopp, Christophe; Boeuf, Frédéric
2016-05-01
A new technological platform aimed at making prototypes and feasibility studies has been setup at STMicroelectronics using 300mm wafer foundry facilities. The technology, called DAPHNE (Datacom Advanced PHotonic Nanoscale Environment), is devoted at developing and evaluating new devices and sub-systems in particular for wavelength division multiplexing (WDM) applications and ring resonator based applications. Developed in the course of PLAT4MFP7 European project, DAPHNE is a flexible platform that fits perfectly R&D needs. The fabrication flow enables the processing of photonic integrated circuits using a silicon-on-insulator (SOI) of 300nm, partial etches of 150nm and 50nm and a total silicon etching. Consequently, two varieties of rib waveguides and one strip waveguide can be fabricated simultaneously with auto-alignment properties. The process variability on the 150nm partially etched silicon and the thin 50nm slab region are both less than 6 nm. Using a variety of different implantation configurations and a back-end of line of 5 metal layers, active devices are fabricated both in germanium and silicon. An available far back-end of line process consists of making 20 μm diameter copper posts on top of the electrical pads so that an electronic integrated circuit can be bonded on top the photonic die by 3D integration. Besides having those fabrication process options, DAPHNE is equipped with a library of standard cells for optical routing and multiplexing. Moreover, typical Mach-Zehnder modulators based on silicon pn junctions are also available for optical signal modulation. To achieve signal detection, germanium photodetectors also exist as standard cells. The measured single-mode propagation losses are 3.5 dB/cm for strip, 3.7 dB/cm for deep-rib (50nm slab) and 1.4 dB/cm for standard rib (150nm slab) waveguides. Transition tapers between different waveguide structures are as low as 0.006 dB.
1060-nm VCSEL-based parallel-optical modules for optical interconnects
NASA Astrophysics Data System (ADS)
Nishimura, N.; Nagashima, K.; Kise, T.; Rizky, A. F.; Uemura, T.; Nekado, Y.; Ishikawa, Y.; Nasu, H.
2015-03-01
The capability of mounting a parallel-optical module onto a PCB through solder-reflow process contributes to reduce the number of piece parts, simplify its assembly process, and minimize a foot print for both AOC and on-board applications. We introduce solder-reflow-capable parallel-optical modules employing 1060-nm InGaAs/GaAs VCSEL which leads to the advantages of realizing wider modulation bandwidth, longer transmission distance, and higher reliability. We demonstrate 4-channel parallel optical link performance operated at a bit stream of 28 Gb/s 231-1 PRBS for each channel and transmitted through a 50-μm-core MMF beyond 500 m. We also introduce a new mounting technology of paralleloptical module to realize maintaining good coupling and robust electrical connection during solder-reflow process between an optical module and a polymer-waveguide-embedded PCB.
NASA Astrophysics Data System (ADS)
Jerábek, Vitezslav; Hüttel, Ivan; Prajzler, Václav; Busek, K.; Seliger, P.
2008-11-01
We report about design and construction of the bidirectional transceiver TRx module for subscriber part of the passive optical network PON for a fiber to the home FTTH topology. The TRx module consists of a epoxy novolak resin polymer planar lightwave circuit (PLC) hybrid integration technology with volume holographic grating triplex filter VHGT, surface-illuminated photodetectors and spot-size converted Fabry-Pérot laser diode in SMD package. The hybrid PLC has composed from a two parts-polymer optical waveguide including VHGT filter section and a optoelectronic microwave section. The both parts are placed on the composite substrate.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kuwahara, D., E-mail: dkuwahar@cc.tuat.ac.jp; Ito, N.; Nagayama, Y.
A new antenna array is proposed in order to improve the sensitivity and complexity of microwave imaging diagnostics systems such as a microwave imaging reflectometry, a microwave imaging interferometer, and an electron cyclotron emission imaging. The antenna array consists of five elements: a horn antenna, a waveguide-to-microstrip line transition, a mixer, a local oscillation (LO) module, and an intermediate frequency amplifier. By using an LO module, the LO optics can be removed, and the supplied LO power to each element can be equalized. We report details of the antenna array and characteristics of a prototype antenna array.
Kuwahara, D; Ito, N; Nagayama, Y; Yoshinaga, T; Yamaguchi, S; Yoshikawa, M; Kohagura, J; Sugito, S; Kogi, Y; Mase, A
2014-11-01
A new antenna array is proposed in order to improve the sensitivity and complexity of microwave imaging diagnostics systems such as a microwave imaging reflectometry, a microwave imaging interferometer, and an electron cyclotron emission imaging. The antenna array consists of five elements: a horn antenna, a waveguide-to-microstrip line transition, a mixer, a local oscillation (LO) module, and an intermediate frequency amplifier. By using an LO module, the LO optics can be removed, and the supplied LO power to each element can be equalized. We report details of the antenna array and characteristics of a prototype antenna array.
Sinclair, N.; Heshami, K.; Deshmukh, C.; Oblak, D.; Simon, C.; Tittel, W.
2016-01-01
Non-destructive detection of photonic qubits is an enabling technology for quantum information processing and quantum communication. For practical applications, such as quantum repeaters and networks, it is desirable to implement such detection in a way that allows some form of multiplexing as well as easy integration with other components such as solid-state quantum memories. Here, we propose an approach to non-destructive photonic qubit detection that promises to have all the mentioned features. Mediated by an impurity-doped crystal, a signal photon in an arbitrary time-bin qubit state modulates the phase of an intense probe pulse that is stored during the interaction. Using a thulium-doped waveguide in LiNbO3, we perform a proof-of-principle experiment with macroscopic signal pulses, demonstrating the expected cross-phase modulation as well as the ability to preserve the coherence between temporal modes. Our findings open the path to a new key component of quantum photonics based on rare-earth-ion-doped crystals. PMID:27853153
Fully optical backplane system using novel optical plug and slot
NASA Astrophysics Data System (ADS)
Cho, In-Kui; Ahn, Seung-Ho; Lee, Woo-Jin; Han, Sang-Pil; Kim, Jin-Tae; Choi, Chun-Ki; Shin, Kyung-Up; Yoon, Keun Byoung; Jeong, Myung-Yung; Park, Hyo Hoon
2005-10-01
A fully optical PCB with transmitter/receiver system boards and optical bakcplane was prepared, which is board-to-board interconnection by an optical slot. We report a 10 Gb/s PRBS NRZ data transmission between transmitter system board and optical backplane embedded multimode polymeric waveguide arrays. The basic concept of the optical PCB is as follows; 1) Metal optical bench is integrated with optoelectronic devices, driver and receiver circuits, polymeric waveguide and access line PCB module. 2) Multimode polymeric waveguide inside an optical backplane, which is embedded into PCB, 3) Optical slot and plug for high-density (channel pitch : 500 um) board-to-board interconnection. The polymeric waveguide technology can be used for transmission of data between transmitter/receiver processing boards and backplane boards. The main components are low-loss tapered polymeric waveguides and a novel optical plug and slot for board-to-board interconnections, respectively. The transmitter/receiver processing boards are designed as plug types, and can be easily plugged-in and -out at an optical backplane board. The optical backplane boards are prepared by employing the lamination processes for conventional electrical PCBs. A practical optical backplane system was implemented with two processing boards and an optical backplane. As connection components between the transmitter/receiver processing boards and backplane board, optical slots made of a 90°-bending structure-embedded optical plug was used. A 10 Gb/s data link was successfully demonstrated. The bit error rate (BER) was determined and is 5.6×10 -9(@10Gb/s) and the BER of 8 Gb/s is < 10 -12.
NASA Astrophysics Data System (ADS)
Vasilopoulos, P.; Wang, X. F.
2004-03-01
Spin-polarized electron transport through waveguides, in which the strength a of the spin-orbit interaction is varied periodically, is studied using the transfer-matrix technique. It is shown that the transmission T exhibits a spin-transistor action, as a function of a or of the length of one of the two subunits of the unit cell if only one mode is allowed to propagate in the waveguide. A similar but not periodic behavior is shown by T as a function of the elec-tron energy E. In a waveguide with only one segment, of strength a2 and length l2, comprised between two segments of strength a1, the total transmission, obtained as T=1/[cos2(D2*l2)+r*sin2(D2*l2)], shows a sinusoidal dependence. The spin-up (T+) and spin-down (T-) transmissions are given by T+=T cos2x and T-=T sin2x, where x is a measure of the spin precession. The total phase acquired by electrons in different branches during propagation is x=2[d1*(L-l2)+ d2*l2] with di=2m*a1/h2 and L the waveguide length. The transmission through a superlattice, with alternating segments of lengths l1, l2, and strengths a1, a2, is also a periodic function of aj and lj, j=1,2. As the strength a can be controlled by applying gates, the structure considered is a good candidate for the establishment of a realistic spin transistor.
Plate-slot polymer waveguide modulator on silicon-on-insulator.
Qiu, Feng; Spring, Andrew M; Hong, Jianxun; Yokoyama, Shiyoshi
2018-04-30
Electro-optic (EO) modulators are vital for efficient "electrical to optical" transitions and high-speed optical interconnects. In this work, we applied an EO polymer to demonstrate modulators on silicon-on-insulator substrates. The fabricated Mach-Zehnder interferometer (MZI) and ring resonator consist of a Si and TiO 2 slot, in which the EO polymer was embedded to realize a low-driving and large bandwidth modulation. The designed optical and electrical constructions are able to provide a highly concentrated TM mode with low propagation loss and effective EO properties. The fabricated MZI modulator shows a π-voltage-length product of 0.66 V·cm and a 3-dB bandwidth of 31 GHz. The measured EO activity is advantageous to exploit the ring modulator with a resonant tunability of 0.065 nm/V and a 3-dB modulation bandwidth up to 13 GHz.
Microwave beamed power technology improvement. [magnetrons and slotted waveguide arrays
NASA Technical Reports Server (NTRS)
Brown, W. C.
1980-01-01
The magnetron directional amplifier was tested for (1) phase shift and power output as a function of gain, anode current, and anode voltage, (2) background noise and harmonics in the output, (3) long life potential of the magnetron cathode, and (4) high operational efficiency. Examples of results were an adequate range of current and voltage over which 20 dB of amplification could be obtained, spectral noise density 155 dB below the carrier, 81.7% overall efficiency, and potential cathode life of 50 years in a design for solar power satellite use. A fabrication method was used to fabricate a 64 slot, 30 in square slotted waveguide array module from 0.020 in thick aluminum sheet. The test results on the array are discussed.
Time-domain study of acoustic pulse propagation in an ocean waveguide using a new normal mode model
NASA Astrophysics Data System (ADS)
Sidorovskaia, Natalia Anatol'evna
1997-11-01
This study is focused on issues of numerical modeling of sound propagation in diverse ocean waveguides. A new normal mode acoustical model (Shallow Water Acoustic Mode Propagation-SWAMP) has been developed. The algorithm for obtaining the vertical modal solution is based on a warping matrix transformation of the solution of an isovelocity (reference) waveguide to one of arbitrary velocity profile. An efficient mode coupling scheme with an adaptive step-size in range has been implemented for range-dependent environments. The new algorithm allows fairly arbitrary ocean layering and readily works at high frequency. An important advantage of the new procedure is that vertical modal eigenfunctions can easily be transformed to a spherical representation suitable for coupling in object scattering problems. Benchmarking results of the new code against established acoustic models based on parabolic equation and existing normal mode approaches show good agreement for range-independent and up-slope and down-slope bathymetries and a very competitive calculation speed. Broad-band pulse propagation in deep and shallow water with double (surface and bottom) ducts has been modeled using the new normal mode model for a variety of ocean waveguide parameters and different frequency bands. The surface duct generates a series of the surface-duct-trapped- modes, which form amplitude-modulated precursors in the far field pulse response. It has been found that the arrival times of the precursors could not be explained by the conventional concept of group velocity so that a more general principle based on the rate of energy transfer has been used. The Airy function solution was found to explain the amplitude modulation of the precursors. It has been learned from the numerical simulation that for a range-independent environment the time separation between precursors is fixed and any variations from this have been a result of range-dependence and mode coupling in the model. The time separation between precursors is in a good agreement with experimental data. The pulse energy distribution in space and time has been used to obtain source localization in depth and range, bottom integrated impedance and an outline of the sound speed profile in the water column. Further model development will lead to a unified approach to propagation and scattering problems in an ocean waveguide, with some aspects of immersed object identification and localization accomplished.
Hinakura, Yosuke; Terada, Yosuke; Arai, Hiroyuki; Baba, Toshihiko
2018-04-30
We demonstrate a Si photonic crystal waveguide Mach-Zehnder modulator that incorporates meander-line electrodes to compensate for the phase mismatch between slow light and RF signals. We first employed commonized ground electrodes in the modulator to suppress undesired fluctuations in the electro-optic (EO) response due to coupled slot-line modes of RF signals. Then, we theoretically and experimentally investigated the effect of the phase mismatch on the EO response. We confirmed that meander-line electrodes improve the EO response, particularly in the absence of internal reflection of the RF signals. The cut-off frequency of this device can reach 27 GHz, which allows high-speed modulation up to 50 Gbps.
Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats.
Lauermann, M; Palmer, R; Koeber, S; Schindler, P C; Korn, D; Wahlbrink, T; Bolten, J; Waldow, M; Elder, D L; Dalton, L R; Leuthold, J; Freude, W; Koos, C
2014-12-01
We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.
Localization of massless Dirac particles via spatial modulations of the Fermi velocity
NASA Astrophysics Data System (ADS)
Downing, C. A.; Portnoi, M. E.
2017-08-01
The electrons found in Dirac materials are notorious for being difficult to manipulate due to the Klein phenomenon and absence of backscattering. Here we investigate how spatial modulations of the Fermi velocity in two-dimensional Dirac materials can give rise to localization effects, with either full (zero-dimensional) confinement or partial (one-dimensional) confinement possible depending on the geometry of the velocity modulation. We present several exactly solvable models illustrating the nature of the bound states which arise, revealing how the gradient of the Fermi velocity is crucial for determining fundamental properties of the bound states such as the zero-point energy. We discuss the implications for guiding electronic waves in few-mode waveguides formed by Fermi velocity modulation.
112 Gb/s sub-cycle 16-QAM Nyquist-SCM for intra-datacenter connectivity
NASA Astrophysics Data System (ADS)
Bakopoulos, Paraskevas; Dris, Stefanos; Argyris, Nikolaos; Spatharakis, Christos; Avramopoulos, Hercules
2016-03-01
Datacenter traffic is exploding. Ongoing advancements in network infrastructure that ride on Moore's law are unable to keep up, necessitating the introduction of multiplexing and advanced modulation formats for optical interconnects in order to overcome bandwidth limitations, and scale lane speeds with energy- and cost-efficiency to 100 Gb/s and beyond. While the jury is still out as to how this will be achieved, schemes relying on intensity modulation with direct detection (IM/DD) are regarded as particularly attractive, due to their inherent implementation simplicity. Moreover, the scaling-out of datacenters calls for longer transmission reach exceeding 300 m, requiring single-mode solutions. In this work we advocate using 16-QAM sub-cycle Nyquist-SCM as a simpler alternative to discrete multitone (DMT), but which is still more bandwidth-efficient than PAM-4. The proposed optical interconnect is demonstrated at 112 Gb/s, which, to the best of our knowledge, is the highest rate achieved in a single-polarization implementation of SCM. Off-the-shelf components are used: A DFB laser, a 24.3 GHz electro-absorption modulator (EAM) and a limiting photoreceiver, combined with equalization through digital signal processing (DSP) at the receiver. The EAM is driven by a low-swing (<1 V) arbitrary waveform generator (AWG), which produces a 28 Gbaud 16-QAM electrical signal with carrier frequency at ~15 GHz. Tight spectral shaping is leveraged as a means of maintaining signal fidelity when using low-bandwidth electro-optic components; matched root-raised-cosine transmit and receive filters with 0.1 excess bandwidth are thus employed. Performance is assessed through transmission experiments over 1250 m and 2000 m of SMF.
Projecting light beams with 3D waveguide arrays
NASA Astrophysics Data System (ADS)
Crespi, Andrea; Bragheri, Francesca
2017-01-01
Free-space light beams with complex intensity patterns, or non-trivial phase structure, are demanded in diverse fields, ranging from classical and quantum optical communications, to manipulation and imaging of microparticles and cells. Static or dynamic spatial light modulators, acting on the phase or intensity of an incoming light wave, are the conventional choices to produce beams with such non-trivial characteristics. However, interfacing these devices with optical fibers or integrated optical circuits often requires difficult alignment or cumbersome optical setups. Here we explore theoretically and with numerical simulations the potentialities of directly using the output of engineered three-dimensional waveguide arrays, illuminated with linearly polarized light, to project light beams with peculiar structures. We investigate through a collection of illustrative configurations the far field distribution, showing the possibility to achieve orbital angular momentum, or to produce elaborate intensity or phase patterns with several singularity points. We also simulate the propagation of the projected beam, showing the possibility to concentrate light. We note that these devices should be at reach of current technology, thus perspectives are open for the generation of complex free-space optical beams from integrated waveguide circuits.
Electrical Transfer Function and Poling Mechanisms for Nonlinear Optical Polymer Modulators
NASA Technical Reports Server (NTRS)
Watson, Michael Dale
2004-01-01
Electro-Optic Polymers hold great promise in increased electro-optic coefficients as compared to their inorganic corollaries. Many researchers have focused on quantum chemistry to describe how the dipoles respond to temperature and electric fields. Much work has also been done for single layer films to confirm these results. For optical applications, waveguide structures are utilized to guide the optical waves in 3 layer stacks. Electrode poling is the only practical poling method for these structures. This research takes an electrical engineering approach to develop poling models and electrical and optical transfer functions of the waveguide structure. The key aspect of the poling model is the large boundary charge density deposited during the poling process. The boundary charge density also has a large effect on the electrical transfer function which is used to explain the transient response of the system. These models are experimentally verified. Exploratory experiment design is used to study poling parameters including time, temperature, and voltage. These studies verify the poling conditions for CLDX/APC and CLDZ/APEC guest host electro optic polymer films in waveguide stacks predicted by the theoretical developments.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cai, Hong; Liu, Sheng; Department of Physics, University of Maryland, Baltimore County
2015-02-02
We study the Kerr nonlinearity of quantum cascade lasers (QCLs) by coupling resonant and off-resonant mid-infrared (mid-IR) femtosecond (fs) pulses into an active QCL waveguide. We observe an increase in the spectral width of the transmitted fs pulses as the coupled mid-infrared (mid-IR) pulse power increases. This is explained by the self-phase modulation effect due to the large Kerr nonlinearity of QCL waveguides. We further confirm this effect by observing the intensity dependent far-field profile of the transmitted mid-IR pulses, showing the pulses undergo self-focusing as they propagate through the active QCL due to the intensity dependent refractive index. Wemore » experimentally estimate the nonlinear refractive index n{sub 2} of a QCL to be ∼8 × 10{sup −9 }cm{sup 2}/W using the far-field beam profile of the transmitted pulses. The finite-difference time-domain simulations of QCL waveguides with Kerr nonlinearity incorporated show similar behavior to the experimental results.« less
Planar waveguide microlenses for nonblocking photonic switches and optical interconnects
NASA Astrophysics Data System (ADS)
Glebov, Alexei L.; Huang, Lidu; Lee, Michael; Aoki, Shigenori; Yokouchi, Kishio
2004-09-01
Different types of planar waveguide microlenses are fabricated with PLC technologies from a variety of optical materials such as silica, photo-definable epoxy resins, and a number of other optical polymers. Hybrid microlenses are also fabricated in which the base of the lens, with a double concave gap, is formed from silica and the gap is filled with an optical polymer. The optimized lens structures provide the maximum coupling efficiencies between the input and output channels at distances up to 100 mm with a minimum channel pitch of 0.5-0.7 mm. Experimental and theoretical studies provide results on collimation and focusing properties of single and double microlenses made of silica, polymer, and silica/polymer. The evaluation of the temperature and wavelength effects on the collimation characteristics of the lenses demonstrate that the single lenses are more stable and, thus, more suitable for operations under varying conditions. Examples of the planar waveguide microlens applications are presented. In one application the microlens arrays are integrated in fast electrooptic photonic switching modules. In the other application the microlenses are embedded in the backplanes with nonblocking optical interconnects.
Silicon Mach-Zehnder interferometer racetrack microring for sensing
NASA Astrophysics Data System (ADS)
Xiong, Yule; Ye, Winnie N.
2014-03-01
SOI-based microring resonators (MRRs) have attracted extensive attentions as ultra-compact sensors. Recently, a new structure design combining a ring and a Mach-Zehnder interferometer (MZI) was proposed as sensors for biomedical applications, and as modulators for communications applications. In this design, the MZI uses two identical couplers, where one arm is formed by connecting the access waveguide of the couplers, while the other arm is part of the microring. Such a device may have only one major resonance with a high extinction ratio in a very broad wavelength span (quasi-free spectral range, quasi-FSR), which offers a very large measurement range for sensing applications. 2×2 multimode interference (MMI) couplers are used to couple the microring and the bus waveguides as MMI couplers have broader wavelength responses. We present the first experimental demonstration of the MMI-coupled MZI racetrack microrings for sensing applications. Two types of MMI-coupled MZI racetrack microrings are discussed: one with wire waveguides, and the other using slotted waveguides. For the MZI racetrack microring using wire waveguides, we achieve a quasi-FSR of 34.3 nm near the wavelength of 1520 nm. The corresponding major resonance of the MZI racetrack microring demonstrates a high extinction ratio of ~22.4 dB with a full-width-half-maximum (FWHM) of 1.94 nm, and a quality factor Q of ~800. On the other hand, the quasi-FSR of the MZI racetrack microring with slot waveguides is 23.2 nm near the wavelength of 1540 nm; and the extinction ratio of the major resonance is ~24.5 dB with λFWHM=0.82 nm and Q=~1,900. To demonstrate the uses for sensing applications, we measure the resonance shifts corresponding to the concentration change of the ambient aqueous solutions of sucrose. DI water is used as the reference for calibration to avoid any other variations, e.g. temperature change. Experiments show that the sensitivities of the MZI racetrack microring sensors with wire and slot waveguides are 101.7 nm/RIU and 166.7 nm/RIU, respectively.
Application de la technologie des materiaux sol-gel et polymere a l'optique integree
NASA Astrophysics Data System (ADS)
Saddiki, Zakaria
2002-01-01
With the advancement of optical telecommunication systems, "integrated optics" and "optical interconnect" technology are becoming more and more important. The major components of these two technologies are photonic integrated circuits (PICs), optoelectronic integrated circuits (OEICs), and optoelectronic multichip modules ( OE-MCMs). Optical signals are transmitted through optical waveguides that interconnect such components. The principle of optical transmission in waveguides is the same as that in optical fibres. To implement these technologies, both passive and active optical devices are needed. A wide variety of optical materials has been studied, e.g., glasses, lithium niobate, III-V semiconductors, sol-gel and polymers. In particular, passive optical components have been fabricated using glass optical waveguides by ion-exchange, or by flame hydrolysis deposition and reactive ion etching (FHD and RIE ). When using FHD and RIE, a very high temperatures (up to 1300°C) are needed to consolidate silica. This work reports on the fabrication and characterization of a new photo-patternable hybrid organic-inorganic glass sol-gel and polymer materials for the realisation of integrated optic and opto-electronic devices. They exhibit low losses in the NIR range, especially at the most important wavelengths windows for optical communications (1320 nm and 1550 nm). The sol-gel and polymer process is based on photo polymerization and thermo polymerization effects to create the wave-guide. The single-layer film is at low temperature and deep UV-light is employed to make the wave-guide by means of the well-known photolithography process. Like any photo-imaging process, the UV energy should exceed the threshold energy of chemical bonds in the photoactive component of hybrid glass material to form the expected integrated optic pattern with excellent line width control and vertical sidewalls. To achieve optical wave-guide, a refractive index difference Delta n occurred between the isolated (guiding layer) and the surrounding region (buffer and cladding). Accordingly, the refractive index emerges as a fundamental device performance material parameter and it is investigated using slab wave-guide. (Abstract shortened by UMI.)
1992-06-30
18-722, 1985. (b)N. Koshizuka, K. Ando, and T. Okuda, "Growth-Induced Birefringence in LPE - grown Iron Garnet Films ," in Proc. Int. Sy ,p...J. Martin, R. Wolf, R. C. LeCraw, and S. L. Black,"Switching and modulation of light in magneto-optic waveguides of garnet films ," Appl. Phys. Lett...in an Yttrium Iron Garnet Film ," Soy. Tech. Phys. Lett., Vol..1, pp.386-387, 1985. (c) A. A. Solomko. Yu. A. Gaidai, A. V. Dovzhenko, M. V
Electro Optic Modulation In a Polymer Ringresonator
NASA Astrophysics Data System (ADS)
Leinse, A.; Driessen, A.; Diemeer, M. B. J.
2004-05-01
A thermo optic and electro optic (EO) tunable polymer ringresonator was realized and tested. The device consisted of a microring resonator made of the 4-dimethylamino-4‵-nitrostilbene (DANS) containing polymer and measurements were done on the through port of this device. The ring was used in a vertical coupling structure. The port waveguides were made of the photo-definable epoxy (SU8). The rings used had a diameter of 100 μm and thermo optic tuning of about 170 pm/°C was measured. EO modulation was measured for TE polarization.
Smooth and flat phase-locked Kerr frequency comb generation by higher order mode suppression
Huang, S.-W.; Liu, H.; Yang, J.; Yu, M.; Kwong, D.-L.; Wong, C. W.
2016-01-01
High-Q microresonator is perceived as a promising platform for optical frequency comb generation, via dissipative soliton formation. In order to achieve a higher quality factor and obtain the necessary anomalous dispersion, multi-mode waveguides were previously implemented in Si3N4 microresonators. However, coupling between different transverse mode families in multi-mode waveguides results in periodic disruption of dispersion and quality factor, and consequently causes perturbation to dissipative soliton formation and amplitude modulation to the corresponding spectrum. Careful choice of pump wavelength to avoid the mode crossing region is thus critical in conventional Si3N4 microresonators. Here, we report a novel design of Si3N4 microresonator in which single-mode operation, high quality factor, and anomalous dispersion are attained simultaneously. The novel microresonator is consisted of uniform single-mode waveguides in the semi-circle region, to eliminate bending induced mode coupling, and adiabatically tapered waveguides in the straight region, to avoid excitation of higher order modes. The intrinsic quality factor of the microresonator reaches 1.36 × 106 while the group velocity dispersion remains to be anomalous at −50 fs2/mm. With this novel microresonator, we demonstrate that broadband phase-locked Kerr frequency combs with flat and smooth spectra can be generated by pumping at any resonances in the optical C-band. PMID:27181420
Excitonic nature of optical transitions in electroabsorption spectra of perovskite solar cells
NASA Astrophysics Data System (ADS)
Ruf, Fabian; Magin, Alice; Schultes, Moritz; Ahlswede, Erik; Kalt, Heinz; Hetterich, Michael
2018-02-01
We investigate the electronic structure of solution-processed perovskite solar cells using temperature-dependent electroabsorption (EA) spectroscopy. Simultaneous measurements of absorption and electromodulated spectra of semitransparent methylammonium lead iodide solar cells facilitate a direct comparison of the specific features. The EA spectra can be transformed to peak-like line shapes utilizing an approach based on the Kramers-Kronig relations. The resulting peak positions correspond well to the discrete excitonic—rather than the continuum—contribution of the absorption spectra derived from generalized Elliott fits. This indicates the excitonic nature of the observed EA resonance and is found to be consistent over the whole temperature range investigated (from T = 10 K up to room temperature). To further confirm these findings, a line shape analysis of the measured EA spectra was performed. The best agreement was achieved using a first-derivative-like functional form which is expected for excitonic systems and supports the conclusion of an excitonic optical transition. Exciton binding energies EB are estimated for the orthorhombic and tetragonal phases as 26 meV and 19 meV, respectively. Nevertheless, power-conversion efficiencies η up to 13% (11.5% stabilized) demonstrate good charge-carrier separation in the devices due to sufficient thermal dissociation and Sommerfeld-enhanced absorption.
All optical controlled photonic integrated circuits using azo dye functionized sol-gel material
NASA Astrophysics Data System (ADS)
Ke, Xianjun
The main focus of this dissertation is development and characterization of all-optical controllable azo dye functionized sol gel material, demonstrating a PIC fabrication technique on glass substrate using such material, and exploration and feasibility demonstration of three PIC functional devices namely optical variable attenuator, optical switches, and optical tunable filters using the material. The realization of all the devices in this dissertation are based on one material: dye functionalized sol-gel material. A photochromic sol-gel material functionalized with azo dye was synthesized and characterized. It possesses a photochromic characteristic under the control of green laser beam illumination. The material characteristics suggest the possibility of a new promising material platform candidate for the fabrication of alloptical controlled photonic integrated circuits. As the first potential application of the dye functionalized sol-gel material, an alloptical variable attenuator was designed and demonstrated. The optical variable attenuation is achieved in Mach-Zehnder interferometric configuration through all-optical modulation of sol-gel waveguide phase shifters. A 2 x 2 optical switch based on multimode interference (MMI) waveguide structure is proposed in the dissertation. The schematic configuration of the optical switch consists of a cascade of two identical MMIs with two all-optical controlled phase shifters realized by using the photochromic sol-gel material. The cross or bar switch state of the optical switch is determined by the phase difference between the two sol-gel waveguide phase shifters. An all-optical tunable filter is designed and its feasibility demonstrated by using the sol-gel photochromic material. Except for the phase change demonstrated on sol-gel waveguide phase shifters, dynamic gratings were observed on sol-gel film when exposed to two interference beams. This reveals the possibility of realizing Bragg grating-based tunable filters. The schematic configuration of proposed tunable filters consists of a single straight waveguide embedded with a sol-gel waveguide. The wavelength tuning of the tunable filters is accomplished by varying the grating period.
Planar waveguide solar concentrator with couplers fabricated by laser-induced backside wet etching
NASA Astrophysics Data System (ADS)
Zhang, Nikai
Solar radiation can be converted directly into electricity by using the photovoltaic effect, which represents the principle of operation of solar cells. Currently, most solar cells are made of crystalline silicon and have a conversion efficiency of about 20% or less. Multi-junction solar cells, made of III-V compound semiconductors, can have efficiencies in excess of 40%. The main factor that prohibits such high-efficiency technologies from wider acceptance is the cost. An alternative approach to using large-area expensive solar cells is to employ lower cost optics and concentrate the solar radiation to smaller cell area, which is the basic principle of solar concentrators. In this thesis, we consider a solar concentrator module that consists of a combination of a lens array and a slab waveguide with etched conical holes on one side of the waveguide, which are aligned with the lenslets. Sunlight coming through each of these lenslets is focused on the backside of the waveguide, where a coupling structure (an etched cone) is fabricated. This coupler changes the propagation direction of the incident light in such a way that light is guided through total internal reflection (TIR) within the glass slab and eventually reaches a solar cell, which is properly mounted on the side of the slab. The concept of this concentrated photovoltaic (CPV) system is based on a planar light guide solar concentrator module, proposed earlier by another group. This project builds on the original idea by including the following substantial modifications. The lens array is to be made of solid glass by a mold technology and provided to us by our industrial partner, Libbey, Inc., as opposed to silicone on glass technology, in which the lenses are made out of silicone and sit on a glass substrate. The coupling structures are cone-shaped holes etched directly into the solid glass waveguide, as opposed to coupling structures that are formed by addition of polymeric layer and consequent patterning. The fabrication of the etched holes in the glass is proposed to be based on a self-aligned process using a laser-induced backside etching (LIBWE) method, which is discussed in this project and its feasibility is examined. The role of different parameters to the concentration level and the optical efficiency of the CPV system are studied by simulations in ZEMAX (which is a leading optical analysis/design software) using non-sequential ray tracing. The optical efficiency of this design under different light concentration level is studied and discussed. The main contributions of this research consist of a new design of a waveguide-based CPV system which can be made entirely of glass by a low-cost glass fabrication method, and a feasibility study in terms of critical fabrication steps and optical performance.
Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI
NASA Astrophysics Data System (ADS)
Sciancalepore, Corrado; Hassan, Karim; Ferrotti, Thomas; Harduin, Julie; Duprez, Hélène; Menezo, Sylvie; Ben Bakir, Badhise
2015-02-01
In this communication, we report about the design, fabrication, and testing of Silicon-based photonic integrated circuits (Si-PICs) including low-loss flat-band slow-light high-contrast-gratings (HCGs) waveguides at 1.31 μm. The light slowdown is achieved in 300-nm-thick silicon-on-insulator (SOI) rib waveguides by patterning adiabatically-tapered highcontrast gratings, capable of providing slow-light propagation with extremely low optical losses, back-scattering, and Fabry-Pérot noise. In detail, the one-dimensional (1-D) grating architecture is capable to provide band-edge group indices ng ~ 25, characterized by overall propagation losses equivalent to those of the index-like propagation regime (~ 1-2 dB/cm). Such photonic band-edge slow-light regime at low propagation losses is made possible by the adiabatic apodization of such 1-D HCGs, thus resulting in a win-win approach where light slow-down regime is reached without additional optical losses penalty. As well as that, a tailored apodization optimized via genetic algorithms allows the flattening of slow-light regime over the wavelength window of interest, therefore suiting well needs for group index stability for modulation purposes and non-linear effects generation. In conclusion, such architectures provide key features suitable for power-efficient high-speed modulators in silicon as well as an extremely low-loss building block for non-linear optics (NLO) which is now available in the Si photonics toolbox.
NASA Tech Briefs, December 2010
NASA Technical Reports Server (NTRS)
2010-01-01
Topics include: Coherent Frequency Reference System for the NASA Deep Space Network; Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers; 180-GHz I-Q Second Harmonic Resistive Mixer MMIC; Ultra-Low-Noise W-Band MMIC Detector Modules; 338-GHz Semiconductor Amplifier Module; Power Amplifier Module with 734-mW Continuous Wave Output Power; Multiple Differential-Amplifier MMICs Embedded in Waveguides; Rapid Corner Detection Using FPGAs; Special Component Designs for Differential-Amplifier MMICs; Multi-Stage System for Automatic Target Recognition; Single-Receiver GPS Phase Bias Resolution; Ultra-Wideband Angle-of-Arrival Tracking Systems; Update on Waveguide-Embedded Differential MMIC Amplifiers; Automation Framework for Flight Dynamics Products Generation; Product Operations Status Summary Metrics; Mars Terrain Generation; Application-Controlled Parallel Asynchronous Input/Output Utility; Planetary Image Geometry Library; Propulsion Design With Freeform Fabrication (PDFF); Economical Fabrication of Thick-Section Ceramic Matrix Composites; Process for Making a Noble Metal on Tin Oxide Catalyst; Stacked Corrugated Horn Rings; Refinements in an Mg/MgH2/H2O-Based Hydrogen Generator; Continuous/Batch Mg/MgH2/H2O-Based Hydrogen Generator; Strain System for the Motion Base Shuttle Mission Simulator; Ko Displacement Theory for Structural Shape Predictions; Pyrotechnic Actuator for Retracting Tubes Between MSL Subsystems; Surface-Enhanced X-Ray Fluorescence; Infrared Sensor on Unmanned Aircraft Transmits Time-Critical Wildfire Data; and Slopes To Prevent Trapping of Bubbles in Microfluidic Channels.
NASA Astrophysics Data System (ADS)
Bamiedakis, N.; McKendry, J. J. D.; Xie, E.; Gu, E.; Dawson, M. D.; Penty, R. V.; White, I. H.
2018-02-01
In recent years, light emitting diodes (LEDs) have gained renewed interest for use in visible light communication links (VLC) owing to their potential use as both high-quality power-efficient illumination sources as well as low-cost optical transmitters in free-space and guided-wave links. Applications that can benefit from their use include optical wireless systems (LiFi and Internet of Things), in-home and automotive networks, optical USBs and short-reach low-cost optical interconnects. However, VLC links suffer from the limited LED bandwidth (typically 100 MHz). As a result, a combination of novel LED devices, advanced modulation formats and multiplexing methods are employed to overcome this limitation and achieve high-speed (>1 Gb/s) data transmission over such links. In this work, we present recent advances in the formation of high-aggregate-capacity low cost guided wave VLC links using stacked polymer multimode waveguides and matching micro-pixelated LED (μLED) arrays. μLEDs have been shown to exhibit larger bandwidths (>200 MHz) than conventional broad-area LEDs and can be formed in large array configurations, while multimode polymer waveguides enable the formation of low-cost optical links onto standard PCBs. Here, three- and four-layered stacks of multimode waveguides, as well as matching GaN μLED arrays, are fabricated in order to generate high-density yet low-cost optical interconnects. Different waveguide topologies are implemented and are investigated in terms of loss and crosstalk performance. The initial results presented herein demonstrate good intrinsic crosstalk performance and indicate the potential to achieve >= 0.5 Tb/s/mm2 aggregate interconnection capacity using this low-cost technology.
Hybrid organic-inorganic sol-gel materials and components for integrated optoelectronics
NASA Astrophysics Data System (ADS)
Lu, Dong
On the technical platform of hybrid organic-inorganic sol-gel, the integrated optoelectronics in the forms of heterogeneous integration between the hybrid sol-gel waveguide and the high refractive index semiconductors and the nonlinear functional doping of disperse red chromophore into hybrid sol-gel is developed. The structure of hybrid sol-gel waveguide on high index semiconductor substrate is designed with BPM-CAD software. A hybrid sol-gel based on MAPTMS and TEOS suitable for lower cladding for the waveguide is developed. The multi-layer hybrid sol-gel waveguide with good mode confinement and low polarization dependence is fabricated on Si and InP. As proof of concept, a 1 x 12 beam splitter based on multimode interference is fabricated on silicon substrate. The device shows excess loss below 0.65 dB and imbalance below 0.28 dB for both TE and TM polarization. A nonlinear active hybrid sol-gel doped with disperse red 13 has been developed by simple co-solvent method. It permits high loading concentration and has low optical loss at 1550 nm. The second-order nonlinear property of the active sol-gel is induced with corona poling and studied with second harmonic generation. A 3-fold of enhancement in the poling efficiency is achieved by blue light assisted corona poling. The chromophore alignment stability is improved by reducing the free volume of the formed inorganic network from the sol-gel condensation reaction. An active sol-gel channel waveguide has been fabricated using active and passive hybrid sol-gel materials by only photopatterning and spin-coating. An amplitude modulator based on the active sol-gel containing 30 wt.% of DR13 shows an electro-optic coefficient of 14 pm/V at 1550 nm and stable operation within the observation time of 24 days.
NASA Astrophysics Data System (ADS)
Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Gordeev, N. Y.; Kaluzhniy, N. A.; Mintairov, S. A.; Payusov, A. S.; Shernyakov, Yu. M.
2016-03-01
Tilted Wave Lasers (TWLs) based on optically coupled thin active waveguide and thick passive waveguide offer an ultimate solution for thick-waveguide diode laser, preventing catastrophic optical mirror damage and thermal smile in laser bars, providing robust operation in external cavity modules thus enabling wavelength division multiplexing and further increase in brightness enabling direct applications of laser diodes in the mainstream material processing. We show that by proper engineering of the waveguide one can realize high performance laser diodes at different tilt angles of the vertical lobes. Two vertical lobes directed at various angles (namely, +/-27° or +/-9°) to the junction plane are experimentally realized by adjusting the compositions and the thicknesses of the active and the passive waveguide sections. The vertical far field of a TWL with the two +/-9° vertical beams allows above 95% of all the power to be concentrated within a vertical angle below 25°, the fact which is important for laser stack applications using conventional optical coupling schemes. The full width at half maximum of each beam of the value of 1.7° evidences diffraction- limited operation. The broad area (50 μm) TWL chips at the cavity length of 1.5 mm reveal a high differential efficiency ~90% and a current-source limited pulsed power >42W for as-cleaved TWL device. Thus the power per facet length in a laser bar in excess of 8.4 kW/cm can be realized. Further, an ultimate solution for the smallest tilt angle is that where the two vertical lobes merge forming a single lobe directed at the zero angle is proposed.
Compact diode laser module at 1116 nm with an integrated optical isolation and a PM-SMF output
NASA Astrophysics Data System (ADS)
Jedrzejczyk, Daniel; Hofmann, Julian; Werner, Nils; Sahm, Alexander; Paschke, Katrin
2017-02-01
In this work, a fiber-coupled diode laser module emitting around 1116 nm with an output power P < 60 mW is realized. As a laser light source a distributed Bragg reflector (DBR) ridge waveguide diode laser is applied. The module comprises temperature stabilizing components, a micro-lens system as well as an optical micro-isolator. At the output, a polarization-maintaining single-mode fiber (PM-SMF) with a core diameter of 5.5 μm and a standard FC/APC connector are utilized. The generated diffraction limited beam is characterized by a narrow linewidth ( δν < 10 MHz) and a high polarization extinction ratio (PER > 25 dB).
Prebunched-beam free electron maser
NASA Astrophysics Data System (ADS)
Arbel, M.; Ben-Chaim, D.; Cohen, M.; Draznin, M.; Eichenbaum, A.; Gover, Abraham; Kleinman, H.; Kugel, A.; Pinhasi, Yosef; Witman, S.; Yakover, Y. M.
1994-05-01
The development status of a prebunched FEM is described. We are developing a 70 KeV FEM to allow high gain wideband operation and to enable variation of the degree of prebunching. We intend to investigate its operation as an amplifier and as an oscillator. Effects of prebunching, frequency variation, linear and nonlinear effects, will be investigated. The prebuncher consists of a Pierce e-gun followed by a beam modulating section. The prebunched beam is accelerated to 70 KeV and injected into a planar wiggler containing a waveguide. The results obtained to date will be presented. These include: characterization of the e-gun, e-beam transport to and through the wiggler, use of field modifying permanent magnets near the entrance and along the wiggler to obtain good e-beam transport through the wiggler, waveguide selection and characterization.
An acousto-optic sensor based on resonance grating waveguide structure
Xie, Antonio Jou; Song, Fuchuan; Seo, Sang-Woo
2014-01-01
This paper presents an acousto-optic (AO) sensor based on resonance grating waveguide structure. The sensor is fabricated using elastic polymer materials to achieve a good sensitivity to ultrasound pressure waves. Ultrasound pressure waves modify the structural parameters of the sensor and result in the optical resonance shift of the sensor. This converts into a light intensity modulation. A commercial ultrasound transducer at 20 MHz is used to characterize a fabricated sensor and detection sensitivity at different optical source wavelength within a resonance spectrum is investigated. Practical use of the sensor at a fixed optical source wavelength is presented. Ultimately, the geometry of the planar sensor structure is suitable for two-dimensional, optical pressure imaging applications such as pressure wave detection and mapping, and ultrasound imaging. PMID:25045203
Tailoring entanglement through domain engineering in a lithium niobate waveguide
Ming, Yang; Tan, Ai-Hong; Wu, Zi-Jian; Chen, Zhao-Xian; Xu, Fei; Lu, Yan-Qing
2014-01-01
We propose to integrate the electro-optic (EO) tuning function into on-chip domain engineered lithium niobate (LN) waveguide. Due to the versatility of LN, both the spontaneously parametric down conversion (SPDC) and EO interaction could be realized simultaneously. Photon pairs are generated through SPDC, and the formation of entangled state is modulated by EO processes. An EO tunable polarization-entangled photon state is proposed. Orthogonally-polarized and parallel-polarized entanglements of photon pairs are instantly switchable by tuning the applied field. The characteristics of the source are theoretically investigated showing adjustable bandwidths and high entanglement degrees. Moreover, other kinds of reconfigurable entanglement are also achievable based on suitable domain-design. We believe tailoring entanglement based on domain engineering is a very promising solution for next generation function-integrated quantum circuits. PMID:24770555
Qu, Pengfei; Zhou, Jingran; Chen, Weiyou; Li, Fumin; Li, Haibin; Liu, Caixia; Ruan, Shengping; Dong, Wei
2010-04-20
We designed a microwave (MW) photonics phase shifter, consisting of a Fabry-Perot filter, a phase modulation region (PMR), and distributed Bragg reflectors, in a silicon-on-insulator rib waveguide. The thermo-optics effect was employed to tune the PMR. It was theoretically demonstrated that the linear MW phase shift of 0-2pi could be achieved by a refractive index variation of 0-9.68x10(-3) in an ultrawideband (about 38?GHz-1.9?THz), and the corresponding tuning resolution was about 6.92 degrees / degrees C. The device had a very compact size. It could be easily integrated in silicon optoelectronic chips and expected to be widely used in the high-frequency MW photonics field.
Lehneis, R; Jauregui, C; Steinmetz, A; Limpert, J; Tünnermann, A
2014-02-01
We present an enhanced technique for dispersion-free pulse shortening, which exploits the interplay of different third-order nonlinear effects in a waveguide structure. When exceeding a certain value of the pulse energy coupled into the waveguide, the typical oscillations of self-phase modulation (SPM)-broadened spectra vanish during pulse propagation. Such smoothed spectra ensure a high pulse quality of the spectrally filtered and, therefore, temporally shortened pulses independently of the filtering position. A reduction of the pulse duration from 138 to 24 ps has been achieved while preserving a high temporal quality. To the best of our knowledge, the nonlinear smoothing of SPM-broadened spectra is used in the context of dispersion-free pulse duration reduction for the first time.
NASA Technical Reports Server (NTRS)
Adams, Michael J. (Editor)
1987-01-01
The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.
Tapered rib fiber coupler for semiconductor optical devices
Vawter, Gregory A.; Smith, Robert Edward
2001-01-01
A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.
Rainbow Trapping in Hyperbolic Metamaterial Waveguide
Hu, Haifeng; Ji, Dengxin; Zeng, Xie; Liu, Kai; Gan, Qiaoqiang
2013-01-01
The recent reported trapped “rainbow” storage of light using metamaterials and plasmonic graded surface gratings has generated considerable interest for on-chip slow light. The potential for controlling the velocity of broadband light in guided photonic structures opens up tremendous opportunities to manipulate light for optical modulation, switching, communication and light-matter interactions. However, previously reported designs for rainbow trapping are generally constrained by inherent difficulties resulting in the limited experimental realization of this intriguing effect. Here we propose a hyperbolic metamaterial structure to realize a highly efficient rainbow trapping effect, which, importantly, is not limited by those severe theoretical constraints required in previously reported insulator-negative-index-insulator, insulator-metal-insulator and metal-insulator-metal waveguide tapers, and therefore representing a significant promise to realize the rainbow trapping structure practically. PMID:23409240
NASA Astrophysics Data System (ADS)
Liu, Yuhan; Lu, Keding
2015-04-01
In the last four decades, various techniques including spectroscopic method, wet chemical method and mass spectrometric method, etc, had been developed and applied for the detection of ambient nitrous acid (HONO) concentrations. Followed the instrumental framework prosposed by Heland et al., (2001), we developed a new version of LOng Path Absorpotion Photometer (LOPAP) system which consists of three independent modules: the sampling module, the fluid propulsion module and the detection module. The major modification of our setup compared to previous LOPAPs is the replacement of the peristaltic pumps to be the solenoid pumps. With solenoid pumps the pulsed flow could be computer controlled both in terms of pump stroke volume and pulse frequency, which enable the attainment of a very stable flow rate. The other significant modification of our setup is the exploit of the customized Liquid Waveguide Capillary Cell (LWCC) manufactured by World Precision Instrument Inc, who offers a versatile path length between 50 and 500 cm. The customized LWCC pre-setup the optical fiber in-coupling with the liquid wave guide, providing us an option of fast startup and easy maintenance of the absorption photometry. With our new LOPAP system, we already performed amibient HONO measurements in three Chinese megacity regions - North China Plain, Yangtze River Delta and Pearl River Delta. In all those locations, we found strong diurnal variations of HONO. The typical daytime HONO concentrations were about several hundred ppts while the nighttime concentrations were about several ppbs.
10 Gb/s operation of photonic crystal silicon optical modulators.
Nguyen, Hong C; Sakai, Yuya; Shinkawa, Mizuki; Ishikura, Norihiro; Baba, Toshihiko
2011-07-04
We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V(π)L < 0.056 V∙cm. Optical modulation is demonstrated by electrically driving the device with a 2(31) - 1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.
Waveguide electro-optic modulators based on intrinsically polar self-assembled superlattices (SASs)
NASA Astrophysics Data System (ADS)
Liu, Zhifu; Ho, Seng Tiong; Chang, Seongsik; Zhao, Yiguang; Marks, Tobin J.; Kang, Hu; van der Boom, Milko E.; Zhu, Peiwang
2002-12-01
In this paper we describe methods of fabricating and characterizing organic electro-optic modulators based on intrinsically polar self-assembled superlattices. These structures are intrinsically acentric, and exhibit large second harmonic generation and electro-optic responses without the requirement of poling by an external electric field. A novel wet chemical protection-deprotection approach for the growth of self-assembled superlattices have been developed, and the refractive indices of self-assembled organic electro-optic superlattices may be tuned during the self-assembly process. Prototype electro-optic modulators based on chromophoric self-assembled superlattices have been designed and fabricated. The effective electro-optic coefficient of the self-assembled superlattice film in a phase modulator is estimated as about 20 pm/V at a wavelength of 1064 nm.
NASA Astrophysics Data System (ADS)
Zou, L. E.; He, P. P.; Chen, B. X.; Iso, M.
2017-02-01
Optical nonlinearities in the undoped As20S80, low doped P2As20S78 and Sn1As20S79 chacogenide glasses are investigated by using Z-scan method. These experiments show that at 1064 nm the figure of merit (FOM) for As20S80 is ˜1.02, while for Sn1As20S79 increases to ˜1.42, and for P2As20S78 decreases to ˜0.83. These resulted data indicate the addition of Sn in As20S80 system chalcogenide glass can enhance FOM due to creating narrow energy gaps. In addition, the self-phase modulation (SPM) width experiment for Sn1As20S79 strip waveguide displays that the full width half maximum (FWHM) of spectral width increases approximately 0.8 nm under the induction of bandgap light, meaning that the bandgap light can induce to enhance its optical nonlinearity with the nonlinear refractive index of n2≅5.27×10-14 cm2/W.
Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption
NASA Astrophysics Data System (ADS)
Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon
2009-04-01
This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.
Miniature Packaging Concept for LNAs in the 200-300 GHz Range
NASA Technical Reports Server (NTRS)
Samoska, Lorene; Fung, Andy; Varonen, Mikko; Lin, Robert; Peralta, Alejandro; Soria, Mary; Lee, Choonsup; Padmanabhan, Sharmila; Sarkozy, Stephen; Lai, Richard
2016-01-01
In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170-260 GHz) and WR3 (220-325 GHz) waveguide bands for the module development. The modules include two different methods of E-plane probes which have been developed for low loss, and stability at high frequencies. MMIC LNAs were also developed for these frequency ranges and fabricated in Northrop Grumman Corporation's 35 nm InP HEMT technology, and we have experimentally verified that noise performance is lower than reported in prior work. The best results include a miniature LNA module with 550K noise at 224 GHz, and a wideband LNA module with 15 dB gain from 230-280 GHz.
Presi, M; Chiuchiarelli, A; Corsini, R; Choudury, P; Bottoni, F; Giorgi, L; Ciaramella, E
2012-12-10
We report enhanced 10 Gb/s operation of directly modulated bandwidth-limited reflective semiconductor optical amplifiers. By using a single suitable arrayed waveguide grating we achieve simultaneously WDM demultiplexing and optical equalization. Compared to previous approaches, the proposed system results significantly more tolerant to seeding wavelength drifts. This removes the need for wavelength lockers, additional electronic equalization or complex digital signal processing. Uniform C-band operations are obtained experimentally with < 2 dB power penalty within a wavelength drift of 10 GHz (which doubles the ITU-T standard recommendations).
2015-01-01
integrated circuit,” AFRL/SNDP Rome, NY (MIPR#F1ATA06317G002) (2007). [2] S-K. Kim, W. Yun, K. Geary, Y.-C. Hung, and H. R. Fetterman , “Electro-optic...Garner, H. Zhang, V. Chuyanov, L. R. Dalton, F. Wang, A. S. Ren, A. Zhang, G. Todorova, A. Harper, H. R. Fetterman , D. Chen, A. Upupa, D. Bhattacharya... Fetterman , “Push-pull electro-optic polymer modulators with half-wave voltage and low loss at both 1310 and 1550 nm,” Appl. Phys. Lett., 78, 3136-3138
InP on SOI devices for optical communication and optical network on chip
NASA Astrophysics Data System (ADS)
Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.
2011-01-01
For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.
NASA Astrophysics Data System (ADS)
Gao, Yuanda
Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.
Electro-optic studies of novel organic materials and devices
NASA Astrophysics Data System (ADS)
Xu, Jianjun
1997-11-01
Specific single crystal organic materials have high potential for use in high speed optical signal processing and various other electro-optic applications. In this project some of the most important organic crystal materials were studied regarding their detailed electro- optic properties and potential device applications. In particular, the electro-optic properties of N-(4- Nitrophenyl)-L-Prolinol (NPP) and 4'-N,N- dimethylamino-4-methylstilbazolium tosylate (DAST) both of which have extremely large second order susceptibilites were studied. The orientation of the thin film crystal with respect to the substrate surface was determined using-X-ray diffraction. The principal axes of the single crystal thin film were determined by polarization transmission microscopy. The elements of the electro-optic coefficient tensor were measured by field induced birefringence measurements. Detailed measurements for NPP thin films with different orientations of the external electric field with respect to the charge transfer axis were carried out at a wavelength of 1064nm. The wavelength dependence of the electro-optic effect for DAST single crystal thin films was measured using a Ti:Sapphire laser. Several device geometries involving organic single crystal thin film materials were studied. A new method for the fabrication of channel waveguides for organic materials was initiated. Channel waveguides for NPP and ABP were obtained using this methods. Optical modulation due to the electro-optic effect based on the organic channel waveguide for NPP single crystal was demonstrated. The electro-optic modulation using NPP single crystals thin film in a Fabry-Perot cavity was measured. A device using a optical fiber half coupler and organic electro-optic thin film material was constructed, and it has potential applications in optical signal processing.
Lee, Sung-Min; Dhar, Purnim; Chen, Huandong; Montenegro, Angelo; Liaw, Lauren; Kang, Dongseok; Gai, Boju; Benderskii, Alexander V; Yoon, Jongseung
2017-04-25
Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption and enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF 4 :Yb 3+ ,Er 3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (∼40.1 mA/cm 2 ) and energy conversion efficiency (∼12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ∼13.6 mA/cm 2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Sung-Min; Dhar, Purnim; Chen, Huandong
Ultrathin silicon solar cells fabricated by anisotropic wet chemical etching of single-crystalline wafer materials represent an attractive materials platform that could provide many advantages for realizing high-performance, low-cost photovoltaics. However, their intrinsically limited photovoltaic performance arising from insufficient absorption of low-energy photons demands careful design of light management to maximize the efficiency and preserve the cost-effectiveness of solar cells. Herein we present an integrated flexible solar module of ultrathin, nanostructured silicon solar cells capable of simultaneously exploiting spectral upconversion and downshifting in conjunction with multispectral luminescent waveguides and a nanostructured plasmonic reflector to compensate for their weak optical absorption andmore » enhance their performance. The 8 μm-thick silicon solar cells incorporating a hexagonally periodic nanostructured surface relief are surface-embedded in layered multispectral luminescent media containing organic dyes and NaYF4:Yb3+,Er3+ nanocrystals as downshifting and upconverting luminophores, respectively, via printing-enabled deterministic materials assembly. The ultrathin nanostructured silicon microcells in the composite luminescent waveguide exhibit strongly augmented photocurrent (~40.1 mA/cm2) and energy conversion efficiency (~12.8%) than devices with only a single type of luminescent species, owing to the synergistic contributions from optical downshifting, plasmonically enhanced upconversion, and waveguided photon flux for optical concentration, where the short-circuit current density increased by ~13.6 mA/cm2 compared with microcells in a nonluminescent medium on a plain silver reflector under a confined illumination.« less
Independent control of beam astigmatism and ellipticity using a SLM for fs-laser waveguide writing.
Ruiz de la Cruz, A; Ferrer, A; Gawelda, W; Puerto, D; Sosa, M Galván; Siegel, J; Solis, J
2009-11-09
We have used a low repetition rate (1 kHz), femtosecond laser amplifier in combination with a spatial light modulator (SLM) to write optical waveguides with controllable cross-section inside a phosphate glass sample. The SLM is used to induce a controllable amount of astigmatism in the beam wavefront while the beam ellipticity is controlled through the propagation distance from the SLM to the focusing optics of the writing set-up. The beam astigmatism leads to the formation of two separate disk-shaped foci lying in orthogonal planes. Additionally, the ellipticity has the effect of enabling control over the relative peak irradiances of the two foci, making it possible to bring the peak irradiance of one of them below the material transformation threshold. This allows producing a single waveguide with controllable cross-section. Numerical simulations of the irradiance distribution at the focal region under different beam shaping conditions are compared to in situ obtained experimental plasma emission images and structures produced inside the glass, leading to a very satisfactory agreement. Finally, guiding structures with controllable cross-section are successfully produced in the phosphate glass using this approach.
NASA Technical Reports Server (NTRS)
Ladany, I.; Hammer, J. M.
1980-01-01
A module developed for the generation of a stable single wavelength to be used for a fiber optic multiplexing scheme is described. The laser is driven with RZ pulses, and the temperature is stabilized thermoelectrically. The unit is capable of maintaining a fixed wavelength within about 6 A as the pulse duty cycle is changed between 0 and 100 percent. This is considered the most severe case, and much tighter tolerances are obtainable for constant input power coding schemes. Using a constricted double heterostructure laser, a wavelength shift of 0.083 A mA is obtained due to laser self-heating by a dc driving current. The thermoelectric unit is capable of maintaining a constant laser heat-sink temperature within 0.02 C. In addition, miniature lenses and couplers are described which allow efficient coupling of single wavelength modes of junction lasers to thin film optical waveguides. The design of the miniature cylinder lenses and the prism coupling techniques allow 2 mW of single wavelength mode junction laser light to b coupled into thin film waveguides using compact assemblies. Selective grating couplers are also studied.
NASA Astrophysics Data System (ADS)
Wang, Chao; Search, Christopher
2013-03-01
Optical gyroscopes based on the Sagnac effect are of great interest both theoretically and practically. Previously it has been suggested a nonlinear Kerr medium inserted into a ring resonator gyroscope can largely increase the rotation sensitivity due to an instability caused by the non-reciprocal self-phase and cross-phase modulations. Recently, coupled microresonator arrays such as Side-Coupled Integrated Spaced Sequence of Resonators (SCISSOR) and Coupled Resonator Optical Waveguides (CROW) have drawn interest as potential integrated gyroscopes due to the sensitivity enhancement resulting from distributed interference between resonators. Here we analyze a SCISSOR system, which consists of an array of microresonators evanescently coupled to two parallel bus waveguides in the presence of a strong intra-resonator Kerr nonlinearity. We show that the distributed interference in the waveguides combined with the nonlinearly enhanced Sagnac effect in the resonators can further improve the sensitivity compared with either a single resonator of equal footprint or SCISSOR without a Kerr nonlinearity. Numerical simulation shows that bistability in the SCISSOR occurs and the rotation sensitivity dIoutput/dω can go to infinity near the boundaries of the bistable region.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mollet, O., E-mail: oriane.mollet@lpn.cnrs.fr; Martinez, A.; Merghem, K.
In this paper, we report the characteristics of InAs/InP quantum dashes (QDash) based lasers emitting around 1.55 μm. An unprecedented high modal gain of ∼100 cm{sup −1} is obtained for an optimized active structure by stacking 12 QDash layers. Directly modulated lasers allowed achieving a modulation bandwidth of ∼10 GHz and a Henry factor around 5. Thanks to p-type doping, the Henry factor value is reduced down to 2.7 while the modulation bandwidth still amounts to ∼10 GHz. This shows that doping of the active region is important to improve the dynamic characteristics of QDash lasers.
40 Gbit/s low-loss silicon optical modulator based on a pipin diode.
Ziebell, Melissa; Marris-Morini, Delphine; Rasigade, Gilles; Fédéli, Jean-Marc; Crozat, Paul; Cassan, Eric; Bouville, David; Vivien, Laurent
2012-05-07
40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.
Three-dimensional patterning in polymer optical waveguides using focused ion beam milling
NASA Astrophysics Data System (ADS)
Kruse, Kevin; Burrell, Derek; Middlebrook, Christopher
2016-07-01
Waveguide (WG) photonic-bridge taper modules are designed for symmetric planar coupling between silicon WGs and single-mode fibers (SMFs) to minimize photonic chip and packaging footprint requirements with improving broadband functionality. Micromachined fabrication and evaluation of polymer WG tapers utilizing high-resolution focused ion beam (FIB) milling is performed and presented. Polymer etch rates utilizing the FIB and optimal methods for milling polymer tapers are identified for three-dimensional patterning. Polymer WG tapers with low sidewall roughness are manufactured utilizing FIB milling and optically tested for fabrication loss. FIB platforms utilize a focused beam of ions (Ga+) to etch submicron patterns into substrates. Fabricating low-loss polymer WG taper prototypes with the FIB before moving on to mass-production techniques provides theoretical understanding of the polymer taper and its feasibility for connectorization devices between silicon WGs and SMFs.
JPRS report: Science and technology. Central Eurasia
NASA Astrophysics Data System (ADS)
1995-02-01
Translated articles cover the following topics: laser-controlled rotary microwave waveguide junction; optical pulse-phase modulation of semiconductor laser; amplitude-phase distortions of light beam obliquely propagating through ground layer of troposphere; antenna arrays with ultrafast beam scanning; materials for a walk on moon; textile-wood-coal briquette path to capitalism; and development of automated system for scientific research and design of heat and mass transfer processes.
Design of see-through near-eye display for presbyopia.
Wu, Yishi; Chen, Chao Ping; Zhou, Lei; Li, Yang; Yu, Bing; Jin, Huayi
2017-04-17
We propose a compact design of see-through near-eye display that is dedicated to presbyopia. Our solution is characterized by a plano-convex waveguide, which is essentially an integration of a corrective lens and two volume holograms. Its design rules are set forth in detail, followed by the results and discussion regarding the diffraction efficiency, field of view, modulation transfer function, distortion, and simulated imaging.
Kim, Gyungock; Park, Jeong Woo; Kim, In Gyoo; Kim, Sanghoon; Kim, Sanggi; Lee, Jong Moo; Park, Gun Sik; Joo, Jiho; Jang, Ki-Seok; Oh, Jin Hyuk; Kim, Sun Ae; Kim, Jong Hoon; Lee, Jun Young; Park, Jong Moon; Kim, Do-Won; Jeong, Deog-Kyoon; Hwang, Moon-Sang; Kim, Jeong-Kyoum; Park, Kyu-Sang; Chi, Han-Kyu; Kim, Hyun-Chang; Kim, Dong-Wook; Cho, Mu Hee
2011-12-19
We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13μm CMOS interface IC chips were hybrid-integrated.
Waveguide arrangements based on adiabatic elimination
Suchowski, Haim; Mrejen, Michael; Wu, Chihhui; Zhang, Xiang
2016-09-13
This disclosure provides systems, methods, and apparatus related to nanophotonics. In one aspect, an arrangement of waveguides includes a substrate and three waveguides. Each of the three waveguides may be a linear waveguide. A second waveguide is positioned between a first waveguide and a third waveguide. The dimensions and positions of the first, the second, and the third waveguides are specified to substantially eliminate coupling between the first waveguide and the third waveguide over a distance of about 1 millimeter to 2 millimeters along lengths of the first waveguide, the second waveguide, and the third waveguide.
1989-12-31
interference rejection fo wideband OPENING REMARKS receiver systems. A time/space integrating optical architec- Alexander A. Sawchuk, University of...electroabsorptive self-electrooptic-effect devices on a single ZnS interference filter is proposed. (p. 385) are attractive for 2-D arrays for switching and...photorefractive crystal as shown in figure 1. The mutual interference between the two sets of beams produces the desired outer-product matrix W = uv-iW
2016-07-28
can essentially be described in terms of free carrier generation . KEYWORDS: solar cell, photovoltaic, Franz−Keldysh effect, Wannier exciton, Stark...optoelectronic devices such as lasers,1,2 LEDs,3 and solar cells,4−6 despite requiring only inexpensive and relatively crude processing conditions...compared to current high-performance crystalline semiconductors. The archetypal material, CH3NH3PbI3, has exhibited excellent power con- version
Acoustic phonon dephasing in shallow GaAs/Ga 1- xAl xAs single quantum wells
NASA Astrophysics Data System (ADS)
Cassabois, G.; Meccherini, S.; Roussignol, Ph.; Bogani, F.; Gurioli, M.; Colocci, M.; Planel, R.; Thierry-Mieg, V.
1998-07-01
The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga 1- xAl xAs single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements ( T2) of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.
NASA Astrophysics Data System (ADS)
Inc, Mustafa; Isa Aliyu, Aliyu; Yusuf, Abdullahi; Baleanu, Dumitru
2017-12-01
This paper obtains the dark, bright, dark-bright or combined optical and singular solitons to the nonlinear Schrödinger equation (NLSE) with group velocity dispersion coefficient and second-order spatio-temporal dispersion coefficient, which arises in photonics and waveguide optics and in optical fibers. The integration algorithm is the sine-Gordon equation method (SGEM). Furthermore, the explicit solutions of the equation are derived by considering the power series solutions (PSS) theory and the convergence of the solutions is guaranteed. Lastly, the modulation instability analysis (MI) is studied based on the standard linear-stability analysis and the MI gain spectrum is obtained.
Novel Waveguide Architectures for Light Sources in Silicon Photonics
NASA Astrophysics Data System (ADS)
Tummidi, Ravi Sekhar
Of the many challenges which are threatening to derail the success trend set by Moore's Law, perhaps the most prominent one is the "Interconnect Bottleneck". The metallic interconnections which carry inter-chip and intra-chip signals are increasingly proving to be inadequate to carry the enormous amount of data due to band-width limitations, cross talk and increased latency. A silicon based optical interconnect is showing enormous promise to address this issue in a cost effective manner by leveraging the extremely matured CMOS fabrication infrastructure. An optical interconnect system consists of a low loss waveguide, modulator, photo detector and a light source. Of these the only component yet to be demonstrated in silicon is a CMOS compatible electrically pumped silicon based laser. The present work is our endeavor towards the goal of a practical light source in silicon. To this end we have focused our efforts on horizontal slot waveguide which consists of a nm thin low index silica layer sandwiched between two high index silicon layers. Such a structure provides an exceptionally high confinement for the TM-like mode in the thin silica slot. The shallow ridge profile of the waveguide allows in principle for lateral electrical access to the core of the waveguide for excitation of the slot embedded gain material like erbium or nano-crystal sensitized erbium using tunneling, polarization transfer or transport. Low losses in the proposed structure are paramount due to the low gain expectation (˜1dB/cm) from CMOS compatible gain media. This dissertation details the novel techniques conceived to mitigate the severe lateral radiation leakage loss of the TM-like mode in these waveguides and resonators using "Magic Widths" and "Magic Radii" designs. New fabrication techniques are discussed which were developed to achieve ultra-smooth waveguide surfaces to substantially reduce the scattering induced losses in the Silicon-on-Insulator (SOI) high index contrast system. This enabled us to achieve resonators with Qs of 1.6x106 for the TE-like mode in non-slot configurations and 3x105 for the TM-like mode in full slot configuration, the highest yet reported for this type of structure and close to our design requirements for a laser. Erbium was incorporated into the silica slot just 8.3 nm thick and photoluminescence was observed in full waveguide configuration. A simple phenomenological model based on spontaneous emission into a waveguide mode was developed, which predicted >10x Purcell enhancement of the luminescence decay in these slot waveguides even in the absence of a resonator, a result also yielded by a rigorous quantum electrodynamic analysis. These enhanced spontaneous emission rates were experimentally verified using time resolved photoluminescence decay and luminescence power measurements. The results so far indicate that these slot structures could be the enablers for very efficient LEDs due to the highly preferential characteristic of the spontaneous emission to go into the single guided mode. The future goal will be to harness this behavior for novel silicon photonic light sources.
Free space and waveguide Talbot effect: phase relations and planar light circuit applications
NASA Astrophysics Data System (ADS)
Nikkhah, H.; Zheng, Q.; Hasan, I.; Abdul-Majid, S.; Hall, T. J.
2012-10-01
Optical fields that are periodic in the transverse plane self-image periodically as they propagate along the optical axis: a phenomenon known as the Talbot effect. A transfer matrix may be defined that relates the amplitude and phase of point sources placed on a particular grid at the input to their respective multiple images at an image plane. The free-space Talbot effect may be mapped to the waveguide Talbot effect. Applying this mapping to the transfer matrix enables the prediction of the phase and amplitude relations between the ports of a Multimode Interference (MMI) coupler- a planar waveguide device. The transfer matrix approach has not previously been applied to the free-space case and its mapping to the waveguide case provides greater clarity and physical insight into the phase relationships than previous treatments. The paper first introduces the underlying physics of the Talbot effect in free space with emphasis on the positions along the optical axis at which images occur; their multiplicity; and their relative phase relations determined by the Gauss Quadratic Sum of number theory. The analysis is then adapted to predict the phase relationships between the ports of an MMI. These phase relationships are critical to planar light circuit (PLC) applications such as 90° optical hybrids for coherent optical receiver front-ends, external optical I-Q modulators for coherent optical transmitters; and optical phased array switches. These applications are illustrated by results obtained from devices that have been fabricated and tested by the PTLab in Si micro-photonic integration platforms.
Pseudo-One-Dimensional Magnonic Crystals for High-Frequency Nanoscale Devices
NASA Astrophysics Data System (ADS)
Banerjee, Chandrima; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan
2017-07-01
The synthetic magnonic crystals (i.e., periodic composites consisting of different magnetic materials) form one fascinating class of emerging research field, which aims to command the process and flow of information by means of spin waves, such as in magnonic waveguides. One of the intriguing features of magnonic crystals is the presence and tunability of band gaps in the spin-wave spectrum, where the high attenuation of the frequency bands can be utilized for frequency-dependent control on the spin waves. However, to find a feasible way of band tuning in terms of a realistic integrated device is still a challenge. Here, we introduce an array of asymmetric saw-tooth-shaped width-modulated nanoscale ferromagnetic waveguides forming a pseudo-one-dimensional magnonic crystal. The frequency dispersion of collective modes measured by the Brillouin light-scattering technique is compared with the band diagram obtained by numerically solving the eigenvalue problem derived from the linearized Landau-Lifshitz magnetic torque equation. We find that the magnonic band-gap width, position, and the slope of dispersion curves are controllable by changing the angle between the spin-wave propagation channel and the magnetic field. The calculated profiles of the dynamic magnetization reveal that the corrugation at the lateral boundary of the waveguide effectively engineers the edge modes, which forms the basis of the interactive control in magnonic circuits. The results represent a prospective direction towards managing the internal field distribution as well as the dispersion properties, which find potential applications in dynamic spin-wave filters and magnonic waveguides in the gigahertz frequency range.
Semiconductor Nonlinear Waveguide Devices and Integrated-Mirror Etalons
NASA Astrophysics Data System (ADS)
Chuang, Chih-Li.
This dissertation investigates different III-V semiconductor devices for applications in nonlinear photonics. These include passive and active nonlinear directional couplers, current-controlled optical phase shifter, and integrated -mirror etalons. A novel method to find the propagation constants of an optical waveguide is introduced. The same method is applied, with minor modifications, to find the coupling length of a directional coupler. The method presented provides a tool for the design of optical waveguide devices. The design, fabrication, and performance of a nonlinear directional coupler are presented. This device uses light intensity to control the direction of light coming out. This is achieved through photo-generated-carriers mechanism in the picosecond regime and through the optical Stark effect in the femtosecond regime. A two-transverse -dimensions beam-propagation computation is used to model the switching behavior in the nonlinear directional coupler. It is found that, by considering the pulse degradation effect, the computation agrees well with experiments. The possibility of operating a nonlinear directional coupler with gain is investigated. It is concluded that by injecting current into the nonlinear directional coupler does not provide the advantages hoped for and the modelling using 2-D beam -propagation methods verifies that. Using current injection to change the refractive index of a waveguide, an optical phase shifter is constructed. This device has the merit of delivering large phase shift with almost no intensity modulation. A phase shift as large as 3pi is produced in a waveguide 400 μm in length. Finally, a new structure, grown by the molecular beam epitaxy machine, is described. The structure consists of two quarter-wave stacks and a spacer layer to form an integrated-mirror etalon. The theory, design principles, spectral analyses are discussed with design examples to clarify the ideas. Emphasis is given to the vertical-cavity surface-emitting laser constructed from this structure. Here we demonstrated the cw operation of the VCSEL at room temperature.
Polarization-analyzing circuit on InP for integrated Stokes vector receiver.
Ghosh, Samir; Kawabata, Yuto; Tanemura, Takuo; Nakano, Yoshiaki
2017-05-29
Stokes vector modulation and direct detection (SVM/DD) has immense potentiality to reduce the cost burden for the next-generation short-reach optical communication networks. In this paper, we propose and demonstrate an InGaAsP/InP waveguide-based polarization-analyzing circuit for an integrated Stokes vector (SV) receiver. By transforming the input state-of-polarization (SOP) and projecting its SV onto three different vectors on the Poincare sphere, we show that the actual SOP can be retrieved by simple calculation. We also reveal that this projection matrix has a flexibility and its deviation due to device imperfectness can be calibrated to a certain degree, so that the proposed device would be fundamentally robust against fabrication errors. A proof-of-concept photonic integrated circuit (PIC) is fabricated on InP by using half-ridge waveguides to successfully demonstrate detection of different SOPs scattered on the Poincare sphere.
Observation of acoustic Dirac-like cone and double zero refractive index
Dubois, Marc; Shi, Chengzhi; Zhu, Xuefeng; Wang, Yuan; Zhang, Xiang
2017-01-01
Zero index materials where sound propagates without phase variation, holds a great potential for wavefront and dispersion engineering. Recently explored electromagnetic double zero index metamaterials consist of periodic scatterers whose refractive index is significantly larger than that of the surrounding medium. This requirement is fundamentally challenging for airborne acoustics because the sound speed (inversely proportional to the refractive index) in air is among the slowest. Here, we report the first experimental realization of an impedance matched acoustic double zero refractive index metamaterial induced by a Dirac-like cone at the Brillouin zone centre. This is achieved in a two-dimensional waveguide with periodically varying air channel that modulates the effective phase velocity of a high-order waveguide mode. Using such a zero-index medium, we demonstrated acoustic wave collimation emitted from a point source. For the first time, we experimentally confirm the existence of the Dirac-like cone at the Brillouin zone centre. PMID:28317927
McIntyre, P.M.
1993-07-13
An electron tube for achieving high power at high frequency with high efficiency is described, including an input coupler, a ribbon-shaped electron beam and a traveling wave output coupler. The input coupler is a lumped constant resonant circuit that modulates a field emitter array cathode at microwave frequency. A bunched ribbon electron beam is emitted from the cathode in periodic bursts at the desired frequency. The beam has a ribbon configuration to eliminate limitations inherent in round beam devices. The traveling wave coupler efficiently extracts energy from the electron beam, and includes a waveguide with a slot there through for receiving the electron beam. The ribbon beam is tilted at an angle with respect to the traveling wave coupler so that the electron beam couples in-phase with the traveling wave in the waveguide. The traveling wave coupler thus extracts energy from the electron beam over the entire width of the beam.
McIntyre, Peter M.
1993-01-01
An electron tube for achieving high power at high frequency with high efficiency, including an input coupler, a ribbon-shaped electron beam and a traveling wave output coupler. The input coupler is a lumped constant resonant circuit that modulates a field emitter array cathode at microwave frequency. A bunched ribbon electron beam is emitted from the cathode in periodic bursts at the desired frequency. The beam has a ribbon configuration to eliminate limitations inherent in round beam devices. The traveling wave coupler efficiently extracts energy from the electron beam, and includes a waveguide with a slot therethrough for receiving the electron beam. The ribbon beam is tilted at an angle with respect to the traveling wave coupler so that the electron beam couples in-phase with the traveling wave in the waveguide. The traveling wave coupler thus extracts energy from the electron beam over the entire width of the beam.
Spectrum Control through Discrete Frequency Diffraction in the Presence of Photonic Gauge Potentials
NASA Astrophysics Data System (ADS)
Qin, Chengzhi; Zhou, Feng; Peng, Yugui; Sounas, Dimitrios; Zhu, Xuefeng; Wang, Bing; Dong, Jianji; Zhang, Xinliang; Alù; , Andrea; Lu, Peixiang
2018-03-01
By using optical phase modulators in a fiber-optical circuit, we theoretically and experimentally demonstrate large control over the spectrum of an impinging signal, which may evolve analogously to discrete diffraction in spatial waveguide arrays. The modulation phase acts as a photonic gauge potential in the frequency dimension, realizing efficient control of the central frequency and bandwidth of frequency combs. We experimentally achieve a 50 GHz frequency shift and threefold bandwidth expansion of an impinging comb, as well as the frequency analogue of various refraction phenomena, including negative refraction and perfect focusing in the frequency domain, both for discrete and continuous incident spectra. Our study paves a promising way towards versatile frequency management for optical communications and signal processing using time modulation schemes.
Custom chipset and compact module design for a 75-110 GHz laboratory signal source
NASA Astrophysics Data System (ADS)
Morgan, Matthew A.; Boyd, Tod A.; Castro, Jason J.
2016-12-01
We report on the development and characterization of a compact, full-waveguide bandwidth (WR-10) signal source for general-purpose testing of mm-wave components. The monolithic microwave integrated circuit (MMIC) based multichip module is designed for compactness and ease-of-use, especially in size-constrained test sets such as a wafer probe station. It takes as input a cm-wave continuous-wave (CW) reference and provides a factor of three frequency multiplication as well as amplification, output power adjustment, and in situ output power monitoring. It utilizes a number of custom MMIC chips such as a Schottky-diode limiter and a broadband mm-wave detector, both designed explicitly for this module, as well as custom millimeter-wave multipliers and amplifiers reported in previous papers.
1986-04-04
effectiveness of new ships and ship systems. The basis of this new technology is the optical fiber, a thin, flex- ible glass or plastic waveguide through...His photophone used unguiled modulated sunlight to transmit speech about 700 feet (213 m). In 1910, researchers performed theoretical investigations...somewhat more con- troversial use of optical fibers in terms of cost effectiveness is in LANs, or as we sometimes call them in the Navy, "data transfer
Waveguide embedded plasmon laser with multiplexing and electrical modulation
Ma, Ren-min; Zhang, Xiang
2017-08-29
This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.
Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo
2017-12-01
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
VCSEL-based optical transceiver module for high-speed short-reach interconnect
NASA Astrophysics Data System (ADS)
Yagisawa, Takatoshi; Oku, Hideki; Mori, Tatsuhiro; Tsudome, Rie; Tanaka, Kazuhiro; Daikuhara, Osamu; Komiyama, Takeshi; Ide, Satoshi
2017-02-01
Interconnects have been more important in high-performance computing systems and high-end servers beside its improvements in computing capability. Recently, active optical cables (AOCs) have started being used for this purpose instead of conventionally used copper cables. The AOC enables to extend the transmission distance of the high-speed signals dramatically by its broadband characteristics, however, it tend to increase the cost. In this paper, we report our developed quad small form-factor pluggable (QSFP) AOC utilizing cost-effective optical-module technologies. These are a unique structure using generally used flexible printed circuit (FPC) in combination with an optical waveguide that enables low-cost high-precision assembly with passive alignment, a lens-integrated ferrule that improves productivity by eliminating a polishing process for physical contact of standard PMT connector for the optical waveguide, and an overdrive technology that enables 100 Gb/s (25 Gb/s × 4-channel) operation with low-cost 14 Gb/s vertical-cavity surfaceemitting laser (VCSEL) array. The QSFP AOC demonstrated clear eye opening and error-free operation at 100 Gb/s with high yield rate even though the 14 Gb/s VCSEL was used thanks to the low-coupling loss resulting from the highprecision alignment of optical devices and the over-drive technology.
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits
NASA Astrophysics Data System (ADS)
Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo
2017-12-01
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
Twu, Ruey-Ching; Lee, Yi-Huan; Hou, Hong-Yao
2010-01-01
In this paper we have successfully demonstrated a z-propagating Zn-indiffused lithium niobate electro-optic modulator used for optical heterodyne interferometry. Compared to a commercial buck-type electro-optic modulator, the proposed waveguide-type modulator has a lower driving voltage and smaller phase variation while measuring visible wavelengths of 532 nm and 632.8 nm. We also demonstrate an optical temperature measurement system using a homemade modulator. The results show that the measurement sensitivities are almost the same values of 25 deg/°C for both the homemade and the buck-type modulators for a sensing light with a wavelength of 632.8 nm. Because photorefractive impacts are essential in the buck-type modulator at a wavelength of 532 nm, it is difficult to obtain reliable phase measurements, whereas the stable phase operation of the homemade one allows the measurement sensitivity to be improved up to 30 deg/°C with the best measurement resolution at about 0.07 °C for 532 nm. PMID:22163429
Compact waveguide circular polarizer
Tantawi, Sami G.
2016-08-16
A multi-port waveguide is provided having a rectangular waveguide that includes a Y-shape structure with first top arm having a first rectangular waveguide port, a second top arm with second rectangular waveguide port, and a base arm with a third rectangular waveguide port for supporting a TE.sub.10 mode and a TE.sub.20 mode, where the end of the third rectangular waveguide port includes rounded edges that are parallel to a z-axis of the waveguide, a circular waveguide having a circular waveguide port for supporting a left hand and a right hand circular polarization TE.sub.11 mode and is coupled to a base arm broad wall, and a matching feature disposed on the base arm broad wall opposite of the circular waveguide for terminating the third rectangular waveguide port, where the first rectangular waveguide port, the second rectangular waveguide port and the circular waveguide port are capable of supporting 4-modes of operation.
NASA Technical Reports Server (NTRS)
Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)
2016-01-01
A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.
Tantawi, Sami G.; Dolgashev, Valery A.; Yeremian, Anahid D.
2016-03-15
A high-power microwave RF window is provided that includes a cylindrical waveguide, where the cylindrical waveguide includes a ceramic disk concentrically housed in a central region of the cylindrical waveguide, a first rectangular waveguide, where the first rectangular waveguide is connected by a first elliptical joint to a proximal end of the cylindrical waveguide, and a second rectangular waveguide, where the second rectangular waveguide is connected by a second elliptical joint to a distal end of the cylindrical waveguide.
NASA Tech Briefs, October 2009
NASA Technical Reports Server (NTRS)
2009-01-01
Topics covered include: Light-Driven Polymeric Bimorph Actuators; Guaranteeing Failsafe Operation of Extended-Scene Shack-Hartmann Wavefront Sensor Algorithm; Cloud Water Content Sensor for Sounding Balloons and Small UAVs; Pixelized Device Control Actuators for Large Adaptive Optics; T-Slide Linear Actuators; G4FET Implementations of Some Logic Circuits; Electrically Variable or Programmable Nonvolatile Capacitors; System for Automated Calibration of Vector Modulators; Complementary Paired G4FETs as Voltage-Controlled NDR Device; Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band; Low-Noise MMIC Amplifiers for 120 to 180 GHz; Using Ozone To Clean and Passivate Oxygen-Handling Hardware; Metal Standards for Waveguide Characterization of Materials; Two-Piece Screens for Decontaminating Granular Material; Mercuric Iodide Anticoincidence Shield for Gamma-Ray Spectrometer; Improved Method of Design for Folding Inflatable Shells; Ultra-Large Solar Sail; Cooperative Three-Robot System for Traversing Steep Slopes; Assemblies of Conformal Tanks; Microfluidic Pumps Containing Teflon[Trademark] AF Diaphragms; Transparent Conveyor of Dielectric Liquids or Particles; Multi-Cone Model for Estimating GPS Ionospheric Delays; High-Sensitivity GaN Microchemical Sensors; On the Divergence of the Velocity Vector in Real-Gas Flow; Progress Toward a Compact, Highly Stable Ion Clock; Instruments for Imaging from Far to Near; Reflectors Made from Membranes Stretched Between Beams; Integrated Risk and Knowledge Management Program -- IRKM-P; LDPC Codes with Minimum Distance Proportional to Block Size; Constructing LDPC Codes from Loop-Free Encoding Modules; MMICs with Radial Probe Transitions to Waveguides; Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz; and Extending Newtonian Dynamics to Include Stochastic Processes.
Robust and Complex on-Chip Nanophotonics
2015-04-17
organization, e.g. BRL-1234; AFWL-TR-85-4017-Vol-21- PT -2. 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES). Enter the name and address of the...metallic on-chip nanophotonic structures, leading to novel devices in ultra-compact wavelength splitters, and nano- lasers and modulators with very low...between optical fiber and on-chip waveguide based on a novel transformation-optics approach. Finally, in Thrust 3, the team has made substantial
Electro-Optic Modulator Based on Organic Planar Waveguide Integrated with Prism Coupler
NASA Technical Reports Server (NTRS)
Sarkisov, Sergey S.
2002-01-01
The objectives of the project, as they were formulated in the proposal, are the following: (1) Design and development of novel electro-optic modulator using single crystalline film of highly efficient electro-optic organic material integrated with prism coupler; (2) Experimental characterization of the figures-of-merit of the modulator. It is expected to perform with an extinction ratio of 10 dB at a driving signal of 5 V; (3) Conclusions on feasibility of the modulator as an element of data communication systems of future generations. The accomplishments of the project are the following: (1) The design of the electro-optic modulator based on a single crystalline film of organic material NPP has been explored; (2) The evaluation of the figures-of-merit of the electro-optic modulator has been performed; (3) Based on the results of characterization of the figures-of-merit, the conclusion was made that the modulator based on a thin film of NPP is feasible and has a great potential of being used in optic communication with a modulation bandwidth of up to 100 GHz and a driving voltage of the order of 3 to 5 V.
A V-band wafer probe using ridge-trough waveguide
NASA Astrophysics Data System (ADS)
Godshalk, Edward M.
1991-12-01
A V-band (50-75 GHz) wafer probe is presented. The probe features a type of waveguide developed to allow transition from rectangular waveguide to coplanar waveguide. The waveguide consists of a ridge extending from the upper waveguide wall into a trough in the lower waveguide wall, and is known as the ridge-trough waveguide. A mathematical model is presented that allows important properties of the ridge-trough waveguide, such as the cutoff frequency and characteristic impedance, to be calculated.
Injection-locking of terahertz quantum cascade lasers up to 35GHz using RF amplitude modulation.
Gellie, Pierre; Barbieri, Stefano; Lampin, Jean-François; Filloux, Pascal; Manquest, Christophe; Sirtori, Carlo; Sagnes, Isabelle; Khanna, Suraj P; Linfield, Edmund H; Davies, A Giles; Beere, Harvey; Ritchie, David
2010-09-27
We demonstrate that the cavity resonance frequency - the round-trip frequency - of Terahertz quantum cascade lasers can be injection-locked by direct modulation of the bias current using an RF source. Metal-metal and single-plasmon waveguide devices with roundtrip frequencies up to 35GHz have been studied, and show locking ranges above 200MHz. Inside this locking range the laser round-trip frequency is phase-locked, with a phase noise determined by the RF-synthesizer. We find a square-root dependence of the locking range with RF-power in agreement with classical injection-locking theory. These results are discussed in the context of mode-locking operation.
Plasmonic phased array feeder enabling ultra-fast beam steering at millimeter waves.
Bonjour, R; Burla, M; Abrecht, F C; Welschen, S; Hoessbacher, C; Heni, W; Gebrewold, S A; Baeuerle, B; Josten, A; Salamin, Y; Haffner, C; Johnston, P V; Elder, D L; Leuchtmann, P; Hillerkuss, D; Fedoryshyn, Y; Dalton, L R; Hafner, C; Leuthold, J
2016-10-31
In this paper, we demonstrate an integrated microwave phoneeded for beamtonics phased array antenna feeder at 60 GHz with a record-low footprint. Our design is based on ultra-compact plasmonic phase modulators (active area <2.5µm2) that not only provide small size but also ultra-fast tuning speed. In our design, the integrated circuit footprint is in fact only limited by the contact pads of the electrodes and by the optical feeding waveguides. Using the high speed of the plasmonic modulators, we demonstrate beam steering with less than 1 ns reconfiguration time, i.e. the beam direction is reconfigured in-between 1 GBd transmitted symbols.
NASA Astrophysics Data System (ADS)
She, Xuan; Li, Bei; Chen, Kan; Li, Ke; Shu, Xiaowu; Liu, Cheng
2017-02-01
We present a design of a laterally tapered optical waveguide mode-size converter from super luminescent diode (SLD) to silica-based planar lightwave circuit (PLC). The mode-size converter is based on silica-based PLC. By using three dimensional semi-vectorial beam propagation methods, laterally tapered waveguides with different boundaries are simulated and compared with each other, where the factors of polarization-dependent loss and coupling loss are mainly focused on. The results show that the most influential factor for polarization-dependent loss is the ratio of the divergence angle of SLD in the horizontal direction and the vertical direction. The refractive index difference Δ between core layer and cladding layer, core width of endface and taper length influence coupling loss mostly, while the effect of all side boundaries is within 0.05 dB. We also investigate the SLD misalignment tolerance and wavelength bandwidth's impact on coupling loss. Furthermore, we examine the performance of the mode-size converter based on a particular SLD which has a divergence angle of 30°×45°. By optimizing the parameters of the tapered waveguide, the coupling efficiency is increased to 62.4% and the polarization-dependent loss is reduced to 0.035 dB. Meanwhile, it eΔnables us to reduce the coupling loss variation to 0.05dB with core width of endface fabrication tolerance of ±0.5 μm and taper length tolerance of ±0.5 mm. The proposed mode-size converter has been demonstrated to be well performed, implying its application in the optical transceiver module using SLD as light source and hybrid integration of III-V semiconductor waveguiding devices and PLCs.
Radio-over-optical waveguide system-on-wafer for massive delivery capacity 5G MIMO access networks
NASA Astrophysics Data System (ADS)
Binh, Le N.
2017-01-01
Delivering maximum information capacity over MIMO antennae systems beam steering is critical so as to achieve the flexibility via beam steering, maximizing the number of users or community of users in Gb/s rate per user over distributed cloud-based optical-wireless access networks. This paper gives an overview of (i) demands of optical - wireless delivery with high flexibility, especially the beam steering of multi-Tbps information channels to information hungry community of users via virtualized beam steering MIMO antenna systems at the free-license mmW region; (ii) Proposing a novel photonic planar integrated waveguide systems composing several passive and active, passive and amplification photonic devices so as to generate mmW carrier and embedded baseband information channels to feed to antenna elements; (iii) Integration techniques to generate a radio over optical waveguide (RoOW) system-on-wafer (SoW) comprising MIMO planar antenna elements and associate photonic integrated circuits for both up- and down- links; (iv) Challenges encountered in the implementation of the SoW in both wireless and photonic domains; (v) Photonic modulation techniques to achieve maximum transmission capacity per wavelength per MIMO antenna system. (vi) A view on control-feedback systems for fast and accurate generation of phase pattern for MIMO beam steering via a bank of optical phase modulators to mmW carrier phases and their preservation in the converted mmW domain . (vi) The overall operational principles of the novel techniques and technologies based on the coherent mixing of two lightwave channels The entire SoW can be implemented on SOI Si-photonic technology or via hybrid integration. These technological developments and their pros- and cons- will be discussed to achieve 50Tera-bps over the extended 110 channel Cband single mode fiber with mmW centered at 58.6GHz and 7GHz free-license band.
Chip-scale integrated optical interconnects: a key enabler for future high-performance computing
NASA Astrophysics Data System (ADS)
Haney, Michael; Nair, Rohit; Gu, Tian
2012-01-01
High Performance Computing (HPC) systems are putting ever-increasing demands on the throughput efficiency of their interconnection fabrics. In this paper, the limits of conventional metal trace-based inter-chip interconnect fabrics are examined in the context of state-of-the-art HPC systems, which currently operate near the 1 GFLOPS/W level. The analysis suggests that conventional metal trace interconnects will limit performance to approximately 6 GFLOPS/W in larger HPC systems that require many computer chips to be interconnected in parallel processing architectures. As the HPC communications bottlenecks push closer to the processing chips, integrated Optical Interconnect (OI) technology may provide the ultra-high bandwidths needed at the inter- and intra-chip levels. With inter-chip photonic link energies projected to be less than 1 pJ/bit, integrated OI is projected to enable HPC architecture scaling to the 50 GFLOPS/W level and beyond - providing a path to Peta-FLOPS-level HPC within a single rack, and potentially even Exa-FLOPSlevel HPC for large systems. A new hybrid integrated chip-scale OI approach is described and evaluated. The concept integrates a high-density polymer waveguide fabric directly on top of a multiple quantum well (MQW) modulator array that is area-bonded to the Silicon computing chip. Grayscale lithography is used to fabricate 5 μm x 5 μm polymer waveguides and associated novel small-footprint total internal reflection-based vertical input/output couplers directly onto a layer containing an array of GaAs MQW devices configured to be either absorption modulators or photodetectors. An external continuous wave optical "power supply" is coupled into the waveguide links. Contrast ratios were measured using a test rider chip in place of a Silicon processing chip. The results suggest that sub-pJ/b chip-scale communication is achievable with this concept. When integrated into high-density integrated optical interconnect fabrics, it could provide a seamless interconnect fabric spanning the intra-
Detection of picosecond electrical pulses using the intrinsic Franz{endash}Keldysh effect
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lampin, J. F.; Desplanque, L.; Mollot, F.
2001-06-25
We report time-resolved measurements of ultrafast electrical pulses propagating on a coplanar transmission line using the intrinsic Franz{endash}Keldysh effect. A low-temperature-grown GaAs layer deposited on a GaAs substrate allows generation and also detection of ps pulses via electroabsorption sampling (EAS). This all-optical method does not require any external sampling probe. A typical rise time of 1.1 ps has been measured. EAS is a good candidate for use in THz characterization of ultrafast devices. {copyright} 2001 American Institute of Physics.
NASA Technical Reports Server (NTRS)
Larsson, A.; Maserjian, J.
1991-01-01
Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.
Laser-based sensor for detection of hazardous gases in the air using waveguide CO2 laser.
Gondal, Mohammed A; Bakhtiari, Imran A; Dastageer, Abdul K
2007-06-01
A spectrometer based on the principle of photoacoustic spectroscopy has been developed recently at our laboratory for the detection of hazardous gases such as O3, C2H4, SO2, NO2 and SF6. In most of our earlier works, we employed a mechanical chopper to modulate the laser beam and this chopper modulation has the crucial disadvantage of instability in the chopper frequency. Even a minor shift of about 1 Hz in the modulation frequency could significantly reduce the photoacoustic signal by an order of magnitude at the acoustic resonant mode of the photoacoustic cell. To overcome this problem, we developed a photoacoustic spectrometer where a wave guided CW CO2 laser beam is modulated electronically with the external frequency generator. Our preliminary results show that the electronic modulation of CO2 laser beam improved the sensitivity of our spectrometer by a factor of 6. The parametric dependence of photoacoustic signal on laser power, modulation frequency and trace gas concentration, was investigated and the comparison between the two modulation techniques is presented in this paper for detection of trace gases such as C2H4.
Silicon-based silicon–germanium–tin heterostructure photonics
Soref, Richard
2014-01-01
The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479
Self-phase-modulation induced spectral broadening in silicon waveguides
NASA Astrophysics Data System (ADS)
Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram
2004-03-01
The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm2 peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.
Self-phase-modulation induced spectral broadening in silicon waveguides.
Boyraz, Ozdal; Indukuri, Tejaswi; Jalali, Bahram
2004-03-08
The prospect for generating supercontinuum pulses on a silicon chip is studied. Using ~4ps optical pulses with 2.2GW/cm(2) peak power, a 2 fold spectral broadening is obtained. Theoretical calculations, that include the effect of two-photon-absorption, indicate up to 5 times spectral broadening is achievable at 10x higher peak powers. Representing a nonlinear loss mechanism at high intensities, TPA limits the maximum optical bandwidth that can be generated.
Selective layer disordering in III-nitrides with a capping layer
Wierer, Jr., Jonathan J.; Allerman, Andrew A.
2016-06-14
Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.
NASA Astrophysics Data System (ADS)
Martin, Guillermo; Heidmann, Samuel; Rauch, Jean-Yves; Jocou, Laurent; Courjal, Nadège
2014-03-01
We present an optimization process to improve the rejection ratio in integrated beam combiners by locking the dark fringe and then monitoring its intensity. The method proposed here uses the electro-optic effect of lithium niobate in order to lock the dark fringe and to real-time balance the photometric flux by means of a two-stage Mach-Zehnder interferometer waveguide. By applying a control voltage on the output Y-junction, we are able to lock the phase and stay in the dark fringe, while an independent second voltage is applied on the first-stage intensity modulator, to finely balance the photometries. We have obtained a rejection ratio of 4600 (36.6 dB) at 3.39 μm in transverse electric polarization, corresponding to 99.98% fringe contrast, and shown that the system can compensate external phase perturbations (a piston variation of 100 nm) up to around 1 kHz. We also show the preliminary results of this process on wide-band modulation, where a contrast of 38% in 3.25- to 3.65-μm spectral range is obtained. These preliminary results on wide-band need to be optimized, in particular, for reducing scattered light of the device at the Y-junction. We expect this active method to be useful in high-contrast interferometry, in particular, for astronomical spatial projects actually under study.
Microminiature optical waveguide structure and method for fabrication
Strand, O.T.; Deri, R.J.; Pocha, M.D.
1998-12-08
A method for manufacturing low-cost, nearly circular cross section waveguides comprises starting with a substrate material that a molten waveguide material can not wet or coat. A thin layer is deposited of an opposite material that the molten waveguide material will wet and is patterned to describe the desired surface-contact path pedestals for a waveguide. A waveguide material, e.g., polymer or doped silica, is deposited. A resist material is deposited and unwanted excess is removed to form pattern masks. The waveguide material is etched away to form waveguide precursors and the masks are removed. Heat is applied to reflow the waveguide precursors into near-circular cross-section waveguides that sit atop the pedestals. The waveguide material naturally forms nearly circular cross sections due to the surface tension effects. After cooling, the waveguides will maintain the round shape. If the width and length are the same, then spherical ball lenses are formed. Alternatively, the pedestals can be patterned to taper along their lengths on the surface of the substrate. This will cause the waveguides to assume a conical taper after reflowing by heat. 32 figs.
Microminiature optical waveguide structure and method for fabrication
Strand, Oliver T.; Deri, Robert J.; Pocha, Michael D.
1998-01-01
A method for manufacturing low-cost, nearly circular cross section waveguides comprises starting with a substrate material that a molten waveguide material can not wet or coat. A thin layer is deposited of an opposite material that the molten waveguide material will wet and is patterned to describe the desired surface-contact path pedestals for a waveguide. A waveguide material, e.g., polymer or doped silica, is deposited. A resist material is deposited and unwanted excess is removed to form pattern masks. The waveguide material is etched away to form waveguide precursors and the masks are removed. Heat is applied to reflow the waveguide precursors into near-circular cross-section waveguides that sit atop the pedestals. The waveguide material naturally forms nearly circular cross sections due to the surface tension effects. After cooling, the waveguides will maintain the round shape. If the width and length are the same, then spherical ball lenses are formed. Alternatively, the pedestals can be patterned to taper along their lengths on the surface of the substrate. This will cause the waveguides to assume a conical taper after reflowing by heat.
Electro-optic resonant phase modulator
NASA Technical Reports Server (NTRS)
Chen, Chien-Chung (Inventor); Hemmati, Hamid (Inventor); Robinson, Deborah L. (Inventor)
1992-01-01
An electro-optic resonant cavity is used to achieve phase modulation with lower driving voltages. Laser damage thresholds are inherently higher than with previously used integrated optics due to the utilization of bulk optics. Phase modulation is achieved at higher speeds with lower driving voltages than previously obtained with non-resonant electro-optic phase modulators. The instant scheme uses a data locking dither approach as opposed to the conventional sinusoidal locking schemes. In accordance with a disclosed embodiment, a resonant cavity modulator has been designed to operate at a data rate in excess of 100 megabits per sec. By carefully choosing the cavity finesse and its dimension, it is possible to control the pulse switching time to within 4 nano-sec. and to limit the required switching voltage to within 10 V. This cavity locking scheme can be applied by using only the random data sequence, and without the need of dithering of the cavity. Compared to waveguide modulators, the resonant cavity has a comparable modulating voltage requirement. Because of its bulk geometry, the resonant cavity modulator has the potential of accommodating higher throughput power. Mode matching into the bulk device is easier and typically can be achieved with higher efficiency. An additional control loop is incorporated into the modulator to maintain the cavity on resonance.
Method and apparatus for preventing cyclotron breakdown in partially evacuated waveguide
Moeller, Charles P.
1987-01-01
Cyclotron breakdown is prevented in a partially evacuated waveguide by providing a section of waveguide having an axial cut therein in order to apply a potential across the two halves of the waveguide. This section is positioned in the waveguide crossing the area of electron cyclotron resonance. The potential applied across the waveguide halves is used to deflect seed electrons into the wall of the waveguide in order to prevent ionization of gas molecules and creation of more electron ion pairs which would result in cyclotron breakdown. Support means is also disclosed for electrically isolating the waveguide halves and transition means is provided between the section of the waveguide with the axial cut and the solid waveguide at either end thereof.
Kong, Deqing; Tsubokawa, Makoto
2015-07-27
We numerically analyzed the power-coupling characteristics between a high-index-contrast dielectric slot waveguide and a metal-insulator-metal (MIM) plasmonic slot waveguide as functions of structural parameters. Couplings due mainly to the transfer of evanescent components in two waveguides generated high transmission efficiencies of 62% when the slot widths of the two waveguides were the same and 73% when the waveguides were optimized by slightly different widths. The maximum transmission efficiency in the slot-to-slot coupling was about 10% higher than that in the coupling between a normal slab waveguide and an MIM waveguide. Large alignment tolerance of the slot-to-slot coupling was also proved. Moreover, a small gap inserted into the interface between two waveguides effectively enhances the transmission efficiency, as in the case of couplings between a normal slab waveguide and an MIM waveguide. In addition, couplings with very wideband transmissions over a wavelength region of a few hundred nanometers were validated.
NASA Astrophysics Data System (ADS)
Lan, Sheng; Sugimoto, Yoshimasa; Nishikawa, Satoshi; Ikeda, Naoki; Yang, Tao; Kanamoto, Kozyo; Ishikawa, Hiroshi; Asakawa, Kiyoshi
2002-07-01
We present a systematic study of coupled defects in photonic crystals (PCs) and explore their applications in constructing optical components and devices for ultrafast all-optical signal processing. First, we find that very deep band gaps can be generated in the impurity bands of coupled cavity waveguides (CCWs) by a small periodic modulation of defect modes. This phenomenon implies a high-efficiency all-optical switching mechanism. The switching mechanism can be easily extended from one-dimensional (1D) to two-dimensional and three-dimensional PC structures by utilizing the coupling of defect pairs which are generally present in PCs. Second, we suggest that CCWs with quasiflat and narrow impurity bands can be employed as efficient delay lines for ultrashort pulses. Criteria for designing such kind of CCWs have been derived from the analysis of defect coupling and the investigation of pulse transmission through various CCWs. It is found that the availability of quasiflat impurity bands depends not only on the intrinsic properties of the constituting defects but also on the detailed configuration of CCWs. In experiments, optical delay lines based on 1D monorail CCWs have been successfully fabricated and characterized. Finally, we have proposed a new mechanism for constructing waveguide intersections with broad bandwidth and low cross-talk.
NASA Astrophysics Data System (ADS)
Miao, Yinping; Ma, Xixi; He, Yong; Zhang, Hongmin; Yang, Xiaoping; Yao, Jianquan
2017-01-01
An all-solid waveguide array fiber (WAF) is one kind of special microstructured optical fiber in which the higher-index rods are periodically distributed in a low-index silica host to form the transverse two-dimensional photonic crystal. In this paper, one kind of multidimensional microstructured optical fiber photonic device is proposed by using electric arc discharge method to fabricate periodic tapers along the fiber axis. By tuning the applied magnetic field intensity, the propagation characteristics of the all-solid WAF integrated with magnetic fluid are periodically modulated in both radial and axial directions. Experimental results show that the wavelength changes little while the transmission loss increases for an applied magnetic field intensity range from 0 to 500 Oe. The magnetic field sensitivity is 0.055 dB/Oe within the linear range from 50 to 300 Oe. Meanwhile, the all-solid WAF has very similar thermal expansion coefficient for both high- and low-refractive index glasses, and thermal drifts have a little effect on the mode profile. The results show that the temperature-induced transmission loss is <0.3 dB from 26°C to 44°C. Further tuning coherent coupling of waveguides and controlling light propagation, the all-solid WAF would be found great potential applications to develop new micro-nano photonic devices for optical communications and optical sensing applications.
Slotted Polyimide-Aerogel-Filled-Waveguide Arrays
NASA Technical Reports Server (NTRS)
Rodriguez-Solis, Rafael A.; Pacheco, Hector L.; Miranda, Felix A.; Meador, Mary Ann B.
2013-01-01
Polyimide aerogels were considered to serve as a filling for millimeter-wave waveguides. While these waveguides present a slightly higher loss than hollow waveguides, they have less losses than Duroid substrate integrated waveguides (less than 0.15 dB at Ka-band, in a 20 mm section), and exhibit an order of magnitude of mass reduction when compared to commercial waveguides. A Ka-band slotted aerogel-filled-waveguide array was designed, which provided the same gain (9 dBi) as its standard waveguide counterpart, and a slotted aerogel-filled-waveguide array using folded-slots was designed for comparison, obtaining a gain of 9 dB and a bandwidth of 590 MHz.
Competition and evolution of dielectric waveguide mode and plasmonic waveguide mode
NASA Astrophysics Data System (ADS)
Yuan, Sheng-Nan; Fang, Yun-Tuan
2017-10-01
In order to study the coupling and evolution law of the waveguide mode and two plasmonic surface modes, we construct a line defect waveguide based on hexagonal honeycomb plasmonic photonic crystal. Through adjusting the radius of the edge dielectric rods, the competition and evolution behaviors occur between dielectric waveguide mode and plasmonic waveguide mode. There are three status: only plasmonic waveguide modes occur for rA < 0.09a; only dielectric waveguide modes occur for rA > 0.25a; two kinds of modes coexist for 0.09a < rA < 0.25a. The plasmonic waveguide mode has advantages in achieving slow light.
NASA Astrophysics Data System (ADS)
Rablau, Corneliu; Bredthauer, Lance
2007-10-01
Aside from the more traditional data, voice and e-mail communications, new bandwidth intensive applications in the larger consumer markets, such as music, digital pictures and movies, have led to an explosive increase in the demand for transmission capacity for optical communications networks. This has resulted in a widespread deployment of Dense Wavelength Division Multiplexing (DWDM) as a means of increasing the communications capacity by multiplexing and transmitting signals of different wavelengths (establishing multiple communication channels) through a single strand of fiber. We report on the design, assembly and characterization of a 50-GHz, 80-channel Mux-Demux module for DWDM systems. The module has been assembled from two commercially available 100 GHz, 40-channel Array Waveguide Grating (AWG) modules and a 50-GHz to 100-GHz interleaver. Relevant performance parameters such as insertion loss, channel uniformity, next-channel isolation (crosstalk) and integrated cross-talk are presented and discussed in contrast with the performance of other competing technologies such as Thin-Film-Filter-based Mux-Demux devices.
NASA Astrophysics Data System (ADS)
Krippner, Peter; Mohr, Juergen; Saile, Volker
1999-09-01
In recent years, microspectrometers made by the LIGA technology for the visible wavelength range have found their way into the market. Opening the wide field of spectral analysis in the infrared range, the concept of a highly transmissive hollow waveguide has been demonstrated successfully. In combination with linear detector arrays, hollow waveguide microspectrometers can be combined into handheld infrared spectrometer systems. The only obstacle to a miniaturized system is the lack of miniaturized light modulators. To solve this problem, a miniaturized light modulator has been developed. It consists of an oscillating stop driven by an electromagnetic actuator. It is made out of permalloy by means of LIGA micromechanics. Its outer dimensions of approx. 3.0 X 3.2 mm2 and a structure height of 280 micrometer allow it to be integrated into the plane of the entrance slit of the microspectrometer of about 20 mm to 30 mm size. The spectrometer has alignment structures to ensure positioning of the oscillating stop close to the entrance slit. This simplifies assembly. The actuator is excited by an hybrid integrated coil fixed by springs snapping into place during assembly. The maximum supply voltage of 5V allows the chopper to be used in low-voltage spectrometer systems, especially in handheld systems. The highest modulation frequency is more than 1 kHz, which is sufficient to work with the lead salt detectors commonly used. In this frequency range, detector noise is greatly attenuated compared to continuous-light operation. The paper contains an outline of the concept of the whole microspectrometer system. Experimental results are discussed to demonstrate the performance of the system.
Integration of carbon nanotubes in slot waveguides (Conference Presentation)
NASA Astrophysics Data System (ADS)
Durán-Valdeiglesias, Elena; Zhang, Weiwei; Hoang, Thi Hong Cam; Alonso-Ramos, Carlos; Serna, Samuel; Le Roux, Xavier; Cassan, Eric; Balestrieri, Matteo; Keita, Al-Saleh; Sarti, Francesco; Biccari, Francesco; Torrini, Ughetta; Vinattieri, Anna; Yang, Hongliu; Bezugly, Viktor; Cuniberti, Gianaurelio; Filoramo, Arianna; Gurioli, Massimo; Vivien, Laurent
2016-05-01
Demanding applications such as video streaming, social networking, or web search relay on a large network of data centres, interconnected through optical links. The ever-growing data rates and power consumption inside these data centres are pushing copper links close to their fundamental limits. Optical interconnects are being extensively studied with the purpose of solving these limitations. Among the different possible technology platforms, silicon photonics, due to its compatibility with the CMOS platform, has become one of the preferred solutions for the development of the future generation photonic interconnects. However, the on-chip integration of all photonic and optoelectronic building blocks (sources, modulators and detectors…) is very complex and is not cost-effective due to the various materials involved (Ge for detection, doped Si for modulators and III-V for lasing). Carbon nanotubes (CNTs) are nanomaterials of great interest in photonics thanks to their fundamental optical properties, including near-IR room-temperature foto- and electro- luminescence, Stark effect, Kerr effect and absorption. In consequence, CNTs have the ability to emit, modulate and detect light in the telecommunications wavelength range. Furthermore, they are being extensively developed for new nano-electronics applications. In this work, we propose to use CNTs as active material integrated into silicon photonics for the development of all optoelectronic devices. Here, we report on the development of new integration schemes to couple the light emission from CNTs into optical resonators implemented on the silicon-on-insulator and silicon-nitride-on-insulator platforms. A theoretical and experimental analysis of the light interaction of CNTs with micro-ring resonators based on strip and slot waveguides and slot photonic crystal heterostructure cavities were carried out.
Steerable sound transport in a 3D acoustic network
NASA Astrophysics Data System (ADS)
Xia, Bai-Zhan; Jiao, Jun-Rui; Dai, Hong-Qing; Yin, Sheng-Wen; Zheng, Sheng-Jie; Liu, Ting-Ting; Chen, Ning; Yu, De-Jie
2017-10-01
Quasi-lossless and asymmetric sound transports, which are exceedingly desirable in various modern physical systems, are almost always based on nonlinear or angular momentum biasing effects with extremely high power levels and complex modulation schemes. A practical route for the steerable sound transport along any arbitrary acoustic pathway, especially in a three-dimensional (3D) acoustic network, can revolutionize the sound power propagation and the sound communication. Here, we design an acoustic device containing a regular-tetrahedral cavity with four cylindrical waveguides. A smaller regular-tetrahedral solid in this cavity is eccentrically emplaced to break spatial symmetry of the acoustic device. The numerical and experimental results show that the sound power flow can unimpededly transport between two waveguides away from the eccentric solid within a wide frequency range. Based on the quasi-lossless and asymmetric transport characteristic of the single acoustic device, we construct a 3D acoustic network, in which the sound power flow can flexibly propagate along arbitrary sound pathways defined by our acoustic devices with eccentrically emplaced regular-tetrahedral solids.
Yurduseven, Okan; Marks, Daniel L; Fromenteze, Thomas; Smith, David R
2018-03-05
We present a reconfigurable, dynamic beam steering holographic metasurface aperture to synthesize a microwave camera at K-band frequencies. The aperture consists of a 1D printed microstrip transmission line with the front surface patterned into an array of slot-shaped subwavelength metamaterial elements (or meta-elements) dynamically tuned between "ON" and "OFF" states using PIN diodes. The proposed aperture synthesizes a desired radiation pattern by converting the waveguide-mode to a free space radiation by means of a binary modulation scheme. This is achieved in a holographic manner; by interacting the waveguide-mode (reference-wave) with the metasurface layer (hologram layer). It is shown by means of full-wave simulations that using the developed metasurface aperture, the radiated wavefronts can be engineered in an all-electronic manner without the need for complex phase-shifting circuits or mechanical scanning apparatus. Using the dynamic beam steering capability of the developed antenna, we synthesize a Mills-Cross composite aperture, forming a single-frequency all-electronic microwave camera.
High Peak Power Test and Evaluation of S-band Waveguide Switches
NASA Astrophysics Data System (ADS)
Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.
1997-05-01
The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.
Graphene-assisted ultra-compact polarization splitter and rotator with an extended bandwidth.
Zhang, Tian; Ke, Xianmin; Yin, Xiang; Chen, Lin; Li, Xun
2017-09-22
The high refraction-index contrast between silicon and the surrounding cladding makes silicon-on-insulator devices highly polarization-dependent. However, it is greatly desirable for many applications to address the issue of polarization dependence in silicon photonics. Here, a novel ultra-compact polarization splitter and rotator (PSR), constructed with an asymmetrical directional coupler consisting of a rib silicon waveguide and a graphene-embedded rib silicon waveguide (GERSW), on a silicon-on-insulator platform is proposed and investigated. By taking advantage of the large modulation of the effective refractive index of the TE mode for the GERSW by tuning the chemical potential of graphene, the phase matching condition can be well satisfied over a wide spectral band. The presented result demonstrates that for a 7-layer-graphene-embedded PSR with a coupling length of 11.1 μm, a high TM-to-TE conversion efficiency (>-0.5 dB) can be achieved over a broad bandwidth from 1516 to 1602 nm.
Morichetti, Francesco; Canciamilla, Antonio; Ferrari, Carlo; Samarelli, Antonio; Sorel, Marc; Melloni, Andrea
2011-01-01
Wave mixing inside optical resonators, while experiencing a large enhancement of the nonlinear interaction efficiency, suffers from strong bandwidth constraints, preventing its practical exploitation for processing broad-band signals. Here we show that such limits are overcome by the new concept of travelling-wave resonant four-wave mixing (FWM). This approach combines the efficiency enhancement provided by resonant propagation with a wide-band conversion process. Compared with conventional FWM in bare waveguides, it exhibits higher robustness against chromatic dispersion and propagation loss, while preserving transparency to modulation formats. Travelling-wave resonant FWM has been demonstrated in silicon-coupled ring resonators and was exploited to realize a 630-μm-long wavelength converter operating over a wavelength range wider than 60 nm and with 28-dB gain with respect to a bare waveguide of the same physical length. Full compatibility of the travelling-wave resonant FWM with optical signal processing applications has been demonstrated through signal retiming and reshaping at 10 Gb s(-1).
Morichetti, Francesco; Canciamilla, Antonio; Ferrari, Carlo; Samarelli, Antonio; Sorel, Marc; Melloni, Andrea
2011-01-01
Wave mixing inside optical resonators, while experiencing a large enhancement of the nonlinear interaction efficiency, suffers from strong bandwidth constraints, preventing its practical exploitation for processing broad-band signals. Here we show that such limits are overcome by the new concept of travelling-wave resonant four-wave mixing (FWM). This approach combines the efficiency enhancement provided by resonant propagation with a wide-band conversion process. Compared with conventional FWM in bare waveguides, it exhibits higher robustness against chromatic dispersion and propagation loss, while preserving transparency to modulation formats. Travelling-wave resonant FWM has been demonstrated in silicon-coupled ring resonators and was exploited to realize a 630-μm-long wavelength converter operating over a wavelength range wider than 60 nm and with 28-dB gain with respect to a bare waveguide of the same physical length. Full compatibility of the travelling-wave resonant FWM with optical signal processing applications has been demonstrated through signal retiming and reshaping at 10 Gb s−1 PMID:21540838
NASA Astrophysics Data System (ADS)
Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.
Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.
Graphene-on-silicon hybrid plasmonic-photonic integrated circuits.
Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke
2017-06-16
Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.
Tunable Acoustic Valley-Hall Edge States in Reconfigurable Phononic Elastic Waveguides
NASA Astrophysics Data System (ADS)
Liu, Ting-Wei; Semperlotti, Fabio
2018-01-01
We investigate the occurrence of acoustic topological edge states in a 2D phononic elastic waveguide due to a phenomenon that is the acoustic analog of the quantum valley Hall effect. We show that a topological transition takes place between two lattices having broken space-inversion symmetry due to the application of a tunable strain field. This condition leads to the formation of gapless edge states at the domain walls, as further illustrated by the analysis of the bulk-edge correspondence and of the associated topological invariants. Interestingly, topological edge states can also be triggered at the boundary of a single domain, when boundary conditions are properly selected. We also show that the static modulation of the strain field allows us to tune the response of the material between the different supported edge states. Although time-reversal symmetry is still intact in this material system, the edge states are topologically protected when intervalley mixing is either weak or negligible. This characteristic enables selective valley injection, which is achieved via synchronized source strategy.
Xu, Ming; Yang, Wan; Hong, Tao; Kang, TangZhen; Ji, JianHua; Wang, Ke
2017-06-01
Ultrafast all-optical flip-flop based on a passive micro Sagnac waveguide ring is studied through theoretical analysis and numerical simulation in this paper. The types of D, R-S, J-K, and T flip-flop are designed by controlling the cross-phase modulation effect of lights in this special microring. The high nonlinearity of the hollow-core photonic crystal fiber is implanted on a chip to shorten the length of the ring and reduce input power. By sensible management, the pulse width ratio of the input and the control signal, problems of pulse narrowing, and residual pedestal at the out port are solved. The parameters affecting the performance of flip-flops are optimized. The results show that the all-optical flip-flops have stable performance, low power consumption, high transmission rate (up to 100 Gb/s), and response time in picosecond order. The small size microwaveguide structure is suitable for photonic integration.
Dispersive Evolution of Nonlinear Fast Magnetoacoustic Wave Trains
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pascoe, D. J.; Goddard, C. R.; Nakariakov, V. M., E-mail: D.J.Pascoe@warwick.ac.uk
2017-10-01
Quasi-periodic rapidly propagating wave trains are frequently observed in extreme ultraviolet observations of the solar corona, or are inferred by the quasi-periodic modulation of radio emission. The dispersive nature of fast magnetohydrodynamic waves in coronal structures provides a robust mechanism to explain the detected quasi-periodic patterns. We perform 2D numerical simulations of impulsively generated wave trains in coronal plasma slabs and investigate how the behavior of the trapped and leaky components depend on the properties of the initial perturbation. For large amplitude compressive perturbations, the geometrical dispersion associated with the waveguide suppresses the nonlinear steepening for the trapped wave train.more » The wave train formed by the leaky components does not experience dispersion once it leaves the waveguide and so can steepen and form shocks. The mechanism we consider can lead to the formation of multiple shock fronts by a single, large amplitude, impulsive event and so can account for quasi-periodic features observed in radio spectra.« less
Surface morphology of refractive-index waveguide gratings fabricated in polymer films
NASA Astrophysics Data System (ADS)
Dong, Yi; Song, Yan-fang; Ma, Lei; Gao, Fang-fang
2016-09-01
The characteristic modifications are reported on the surface of polymeric waveguide film in the process of volume- grating fabrication. The light from a mode-locked 76 MHz femtosecond laser with pulse duration of 200 fs and wavelength of 800 nm is focused normal to the surface of the sample. The surface morphology modifications are ascribed to a fact that surface swelling occurs during the process. Periodic micro-structure is inscribed with increasing incident power. The laser-induced swelling threshold on the grating, which is higher than that of two-photon initiated photo-polymerization (TPIP) (8 mW), is verified to be about 20 mW. It is feasible to enhance the surface smoothness of integrated optics devices for further encapsulation. The variation of modulation depth is studied for different values of incident power and scan spacing. Ablation accompanied with surface swelling appears when the power is higher. By optimizing the laser carving parameters, highly efficient grating devices can be fabricated.
Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru
2018-02-19
We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.
Vibration Method for Tracking the Resonant Mode and Impedance of a Microwave Cavity
NASA Technical Reports Server (NTRS)
Barmatz, M.; Iny, O.; Yiin, T.; Khan, I.
1995-01-01
A vibration technique his been developed to continuously maintain mode resonance and impedance much between a constant frequency magnetron source and resonant cavity. This method uses a vibrating metal rod to modulate the volume of the cavity in a manner equivalent to modulating an adjustable plunger. A similar vibrating metal rod attached to a stub tuner modulates the waveguide volume between the source and cavity. A phase sensitive detection scheme determines the optimum position of the adjustable plunger and stub turner during processing. The improved power transfer during the heating of a 99.8% pure alumina rod was demonstrated using this new technique. Temperature-time and reflected power-time heating curves are presented for the cases of no tracking, impedance tracker only, mode tracker only and simultaneous impedance and mode tracking. Controlled internal melting of an alumina rod near 2000 C using both tracking units was also demonstrated.
Project Echo: 960-Megacycle, 10-Kilowatt Transmitter
NASA Technical Reports Server (NTRS)
Schafer, J. P.; Brandt, R. H.
1961-01-01
A 10-kw transmitter operating at 960 to 961 Mc was used at the eastern terminus of the Project Echo communications experiment. This transmitter is located on Crawford's Hill near Holmdel, New Jersey. The 10-kw output feeds into a waveguide line leading to a 60-foot dish antenna. Exciter-driver units are available to drive the power amplifier with various modulations, such as wide-deviation FM, low-index phase modulation, single-sideband or double-sideband modulation with or without carrier, 960.05 or 961.05 Mc constant-frequency CW, and radar on-off pulses at 961.05 Mc. The main output amplifier consists primarily of a four-stage, externally-tuned-cavity, water-cooled klystron, operating at a beam voltage of 16 to 18 kv. The transmitter has been operated during many Moonbounce, tropospheric scatter, and Echo I tests with very satisfactory results. This paper describes its use before March 1, 1961.
High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier
NASA Astrophysics Data System (ADS)
Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, T.
2016-02-01
A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
Propagation Characteristics of International Space Station Wireless Local Area Network
NASA Technical Reports Server (NTRS)
Sham, Catherine C.; Hwn, Shian U.; Loh, Yin-Chung
2005-01-01
This paper describes the application of the Uniform Geometrical Theory of Diffraction (UTD) for Space Station Wireless Local Area Networks (WLANs) indoor propagation characteristics analysis. The verification results indicate good correlation between UTD computed and measured signal strength. It is observed that the propagation characteristics are quite different in the Space Station modules as compared with those in the typical indoor WLANs environment, such as an office building. The existing indoor propagation models are not readily applicable to the Space Station module environment. The Space Station modules can be regarded as oversized imperfect waveguides. Two distinct propagation regions separated by a breakpoint exist. The propagation exhibits the guided wave characteristics. The propagation loss in the Space Station, thus, is much smaller than that in the typical office building. The path loss model developed in this paper is applicable for Space Station WLAN RF coverage and link performance analysis.
Flexible manufacturing for photonics device assembly
NASA Technical Reports Server (NTRS)
Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David
1994-01-01
The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.
Waveguide-mode polarization gaps in square spiral photonic crystals
NASA Astrophysics Data System (ADS)
Liu, Rong-Juan; John, Sajeev; Li, Zhi-Yuan
2015-09-01
We designed waveguide channels in two types of square spiral photonic crystals. Wide polarization gaps, in which only one circular polarization wave is allowed while the other counter-direction circular polarization wave is forbidden, can be opened up on the waveguide modes within the fundamental photonic band gap according to the calculation of band structures and transmission spectra. This phenomenon is ascribed to the chirality of the waveguide and is independent of the chirality of the background photonic crystal. Moreover, the transmission spectra show a good one-way property of the waveguide channels. The chiral quality factor demonstrates the handedness of the allowed and impeded chiral waveguide modes, and further proved the property of the waveguide-mode polarization gap. Such waveguides with waveguide-mode polarization gap are a good candidate for one-way waveguides with robust backscattering-immune transport.
NASA Technical Reports Server (NTRS)
Simons, Rainee N. (Inventor); Wintucky, Edwin G. (Inventor)
2016-01-01
A multimode directional coupler is provided. In some embodiments, the multimode directional coupler is configured to receive a primary signal and a secondary signal at a first port of a primary waveguide. The primary signal is configured to propagate through the primary waveguide and be outputted at a second port of the primary waveguide. The multimode directional coupler also includes a secondary waveguide configured to couple the secondary signal from the primary waveguide with no coupling of the primary signal into the secondary waveguide. The secondary signal is configured to propagate through the secondary waveguide and be outputted from a port of the secondary waveguide.
Photonic Waveguide Choke Joint with Absorptive Loading
NASA Technical Reports Server (NTRS)
Wollack, Edward J. (Inventor); U-Yen, Kongpop (Inventor); Chuss, David T. (Inventor)
2016-01-01
A photonic waveguide choke includes a first waveguide flange member having periodic metal tiling pillars, a dissipative dielectric material positioned within an area between the periodic metal tiling pillars and a second waveguide flange member disposed to be coupled with the first waveguide flange member and in spaced-apart relationship separated by a gap. The first waveguide flange member has a substantially smooth surface, and the second waveguide flange member has an array of two-dimensional pillar structures formed therein.
Near-to-eye electroholography via guided-wave acousto-optics for augmented reality
NASA Astrophysics Data System (ADS)
Jolly, Sundeep; Savidis, Nickolaos; Datta, Bianca; Smalley, Daniel; Bove, V. Michael
2017-03-01
Near-to-eye holographic displays act to directly project wavefronts into a viewer's eye in order to recreate 3-D scenes for augmented or virtual reality applications. Recently, several solutions for near-to-eye electroholography have been proposed based on digital spatial light modulators in conjunction with supporting optics, such as holographic waveguides for light delivery; however, such schemes are limited by the inherent low space-bandwidth product available with current digital SLMs. In this paper, we depict a fully monolithic, integrated optical platform for transparent near-to-eye holographic display requiring no supporting optics. Our solution employs a guided-wave acousto-optic spatial light modulator implemented in lithium niobate in conjunction with an integrated Bragg-regime reflection volume hologram.
Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui
2012-01-30
We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.
Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects
NASA Astrophysics Data System (ADS)
Hsieh, I.-Wei
In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon photonics. It is the author's hope that the thesis would convey to its readers the significance and potential of this exciting emerging technology.
Acoustic one-way mode conversion and transmission by sonic crystal waveguides
NASA Astrophysics Data System (ADS)
Ouyang, Shiliang; He, Hailong; He, Zhaojian; Deng, Ke; Zhao, Heping
2016-09-01
We proposed a scheme to achieve one-way acoustic propagation and even-odd mode switching in two mutually perpendicular sonic crystal waveguides connected by a resonant cavity. The even mode in the entrance waveguide is able to switch to the odd mode in the exit waveguide through a symmetry match between the cavity resonant modes and the waveguide modes. Conversely, the odd mode in the exit waveguide is unable to be converted into the even mode in the entrance waveguide as incident waves and eigenmodes are mismatched in their symmetries at the waveguide exit. This one-way mechanism can be applied to design an acoustic diode for acoustic integration devices and can be used as a convertor of the acoustic waveguide modes.
III-V on silicon micro-photonic circuits for frequency downconversion of RF signals
NASA Astrophysics Data System (ADS)
Roelkens, G.; Keyvaninia, S.; Tassaert, M.; Latkowski, S.; Bente, E.; Mariën, J.; Thomassen, L.; Baets, R.
2017-11-01
RF frequency downconverters are of key importance in communication satellites. Classically, this is implemented using an electronic mixer. In this paper we explore the use of photonic technology to realize the same functionality. The potential advantages of such an approach compared to the classical microwave solutions are that it is lighter weight, has lower power consumption and can be made smaller if photonic technology is used. An additional advantage is the fact that the optical local oscillator (LO) reference can easily be transported over longer distances than the equivalent LO signal in the microwave domain due to the large bandwidth and low loss and dispersion of optical fiber. Another big advantage is that one can envision the use of short pulse trains as the LO - starting off from a sinusoidal RF reference - in order to exploit subsampling. Subsampling avoids the need for high frequency LO references, which is especially valuable if a downconversion over several 10s of GHz is required. In this paper we present the operation principle of such a photonic frequency downconverter and describe the performance of the developed micro-photonic building blocks required for this functionality. These micro-photonic building blocks are implemented on a III-V semiconductor-on-silicon photonic platform. The components include a micro-photonic hybridly modelocked laser, a 30GHz electroabsorption modulator and an intermediate frequency (1.5GHz) photodetector.