Sample records for x-band structure test

  1. An X-Band Gun Test Area at SLAC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Limborg-Deprey, C.; Adolphsen, C.; Chu, T.S.

    The X-Band Test Area (XTA) is being assembled in the NLCTA tunnel at SLAC to serve as a test facility for new RF guns. The first gun to be tested will be an upgraded version of the 5.6 cell, 200 MV/m peak field X-band gun designed at SLAC in 2003 for the Compton Scattering experiment run in ASTA. This new version includes some features implemented in 2006 on the LCLS gun such as racetrack couplers, increased mode separation and elliptical irises. These upgrades were developed in collaboration with LLNL since the same gun will be used in an injector formore » a LLNL Gamma-ray Source. Our beamline includes an X-band acceleration section which takes the electron beam up to 100 MeV and an electron beam measurement station. Other X-Band guns such as the UCLA Hybrid gun will be characterized at our facility.« less

  2. Towards band structure and band offset engineering of monolayer Mo(1-x)W(x)S2 via Strain

    NASA Astrophysics Data System (ADS)

    Kim, Joon-Seok; Ahmad, Rafia; Pandey, Tribhuwan; Rai, Amritesh; Feng, Simin; Yang, Jing; Lin, Zhong; Terrones, Mauricio; Banerjee, Sanjay K.; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung-Fu

    2018-01-01

    Semiconducting transition metal dichalcogenides (TMDs) demonstrate a wide range of optoelectronic properties due to their diverse elemental compositions, and are promising candidates for next-generation optoelectronics and energy harvesting devices. However, effective band offset engineering is required to implement practical structures with desirable functionalities. Here, we explore the pressure-induced band structure evolution of monolayer WS2 and Mo0.5W0.5S2 using hydrostatic compressive strain applied in a diamond anvil cell (DAC) apparatus and theoretical calculations, in order to study the modulation of band structure and explore the possibility of band alignment engineering through different compositions. Higher W composition in Mo(1-x)W(x)S2 contributes to a greater pressure-sensitivity of direct band gap opening, with a maximum value of 54 meV GPa-1 in WS2. Interestingly, while the conduction band minima (CBMs) remains largely unchanged after the rapid gap increase, valence band maxima (VBMs) significantly rise above the initial values. It is suggested that the pressure- and composition-engineering could introduce a wide variety of band alignments including type I, type II, and type III heterojunctions, and allow to construct precise structures with desirable functionalities. No structural transition is observed during the pressure experiments, implying the pressure could provide selective modulation of band offset.

  3. Band structure engineering for solar energy applications: Zinc oxide(1-x) selenium(x) films and devices

    NASA Astrophysics Data System (ADS)

    Mayer, Marie Annette

    New technologies motivate the development of new semiconducting materials, for which structural, electrical and chemical properties are not well understood. In addition to new materials systems, there are huge opportunities for new applications, especially in solar energy conversion. In this dissertation I explore the role of band structure engineering of semiconducting oxides for solar energy. Due to the abundance and electrochemical stability of oxides, the appropriate modification could make them appealing for applications in both photovoltaics and photoelectrochemical hydrogen production. This dissertation describes the design, synthesis and evaluation of the alloy ZnO1-xSe x for these purposes. I review several methods of band structure engineering including strain, quantum confinement and alloying. A detailed description of the band anticrossing (BAC) model for highly mismatched alloys is provided, including the derivation of the BAC model as well as recent work and potential applications. Thin film ZnOxSe1-x samples are grown by pulsed laser deposition (PLD). I describe in detail the effect of growth conditions (temperature, pressure and laser fluence) on the chemistry, structure and optoelectronic properties of ZnOxSe1-x. The films are grown using different combinations of PLD conditions and characterized with a variety of techniques. Phase pure films with low roughness and high crystallinity were obtained at temperatures below 450¢ªC, pressures less than 10-4 Torr and laser fluences on the order of 1.5 J/cm 2. Electrical conduction was still observed despite heavy concentrations of grain boundaries. The band structure of ZnO1-xSex is then examined in detail. The bulk electron affinity of a ZnO thin film was measured to be 4.5 eV by pinning the Fermi level with native defects. This is explained in the framework of the amphoteric defect model. A shift in the ZnO1-xSe x valence band edge with x is observed using synchrotron x-ray absorption and emission

  4. Hybrid functional study of band structures of GaAs1-xNx and GaSb1-xNx alloys

    NASA Astrophysics Data System (ADS)

    Virkkala, Ville; Havu, Ville; Tuomisto, Filip; Puska, Martti J.

    2012-02-01

    Band structures of GaAs1-xNx and GaSb1-xNx alloys are studied in the framework of the density functional theory within the hybrid functional scheme (HSE06). We find that the scheme gives a clear improvement over the traditional (semi)local functionals in describing, in a qualitative agreement with experiments, the bowing of electron energy band gap in GaAs1-xNx alloys. In the case of GaSb1-xNx alloys, the hybrid functional used makes the study of band structures possible ab initio without any empirical parameter fitting. We explain the trends in the band gap reductions in the two materials that result mainly from the positions of the nitrogen-induced states with respect to the bottoms of the bulk conduction bands.

  5. Estimating tropical forest structure using LIDAR AND X-BAND INSAR

    NASA Astrophysics Data System (ADS)

    Palace, M. W.; Treuhaft, R. N.; Keller, M. M.; Sullivan, F.; Roberto dos Santos, J.; Goncalves, F. G.; Shimbo, J.; Neumann, M.; Madsen, S. N.; Hensley, S.

    2013-12-01

    Tropical forests are considered the most structurally complex of all forests and are experiencing rapid change due to anthropogenic and climatic factors. The high carbon stocks and fluxes make understanding tropical forests highly important to both regional and global studies involving ecosystems and climate. Large and remote areas in the tropics are prime targets for the use of remotely sensed data. Radar and lidar have previously been used to estimate forest structure, with an emphasis on biomass. These two remote sensing methods have the potential to yield much more information about forest structure, specifically through the use of X-band radar and waveform lidar data. We examined forest structure using both field-based and remotely sensed data in the Tapajos National Forest, Para, Brazil. We measured multiple structural parameters for about 70 plots in the field within a 25 x 15 km area that have TanDEM-X single-pass horizontally and vertically polarized radar interferometric data. High resolution airborne lidar were collected over a 22 sq km portion of the same area, within which 33 plots were co-located. Preliminary analyses suggest that X-band interferometric coherence decreases by about a factor of 2 (from 0.95 to 0.45) with increasing field-measured vertical extent (average heights of 7-25 m) and biomass (10-430 Mg/ha) for a vertical wavelength of 39 m, further suggesting, as has been observed at C-band, that interferometric synthetic aperture radar (InSAR) is substantially more sensitive to forest structure/biomass than SAR. Unlike InSAR coherence versus biomass, SAR power at X-band versus biomass shows no trend. Moreover, airborne lidar coherence at the same vertical wavenumbers as InSAR is also shown to decrease as a function of biomass, as well. Although the lidar coherence decrease is about 15% more than the InSAR, implying that lidar penetrates more than InSAR, these preliminary results suggest that X-band InSAR may be useful for structure and

  6. Block 3 X-band receiver-exciter

    NASA Technical Reports Server (NTRS)

    Johns, C. E.

    1987-01-01

    The development of an X-band exciter, for use in the X-Band Uplink Subsystem, was completed. The exciter generates the drive signal for the X-band transmitter and also generates coherent test signals for the S- and X-band Block 3 translator and a Doppler reference signal for the Doppler extractor system. In addition to the above, the exciter generates other reference signals that are described. Also presented is an overview of the exciter design and some test data taken on the prototype. A brief discussion of the Block 3 Doppler extractor is presented.

  7. Initial Testing of the Mark-0 X-Band RF Gun at SLAC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vlieks, Arnold; Adolphsen, C.; Dolgashev, V.

    A new X-band RF gun (Mark-0) has been assembled, tuned and was tested in the ASTA facility at SLAC. This gun has been improved from an earlier gun used in Compton-scattering experiments at SLAC by the introduction of a racetrack dual-input coupler to reduce quadrupole fields. Waveguide-to-coupler irises were also redesigned to reduce surface magnetic fields and therefore peak pulse surface heating. Tests of this photocathode gun will allow us to gain early operational experience for beam tests of a new gun with further improvements (Mark-1) being prepared for SLAC's X-Band Test Area (XTA) program and the LLNL MEGa-ray program.more » Results of current testing up to {approx} 200 MV/m peak surface Electric fields are presented.« less

  8. Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.

    1997-07-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements atmore » 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}« less

  9. Rye Canyon X-ray noise test: One-third octave-band data

    NASA Technical Reports Server (NTRS)

    Willshire, W. L., Jr.

    1983-01-01

    Acoustic data were obtained for the 25 ft. diameter X-wing rotor model during performance testing of the rotor system in hover. Data collected at the outdoor whirl tower test facility with a twelve microphone array were taken for approximately 150 test conditions comprised of various combinations of RPM, blade pressure ratio (BPR), and blade angle of attack (collective). The three test parameters had four values of RPM from 404 to 497, twelve values of BPR from 1.0 to 2.1, and six values of collective from 0.0 deg to 8.5 deg. Fifteen to twenty seconds of acoustic data were reduced to obtain an average 1/3 octave band spectrum for each microphone for each test condition. The complete, as measured, 1/3 octave band results for all the acoustic data are listed. Another part of the X-wing noise test was the acoustic calibration of the Rye Canyon whirl tower bowl. Corrections were computed which, when applied to as measured data, yield estimates of the free field X-wing noise. The free field estimates provide a more realistic measure of the rotor system noise levels. Trend analysis of the three test parameters on noise level were performed.

  10. C (G)-Band & X (I) - Band Noncoherent Radar Transponder Performance Specification Standard

    DTIC Science & Technology

    2002-04-01

    TRAINING RANGE NEVADA TEST SITE STANDARD 262-02 ELECTRONIC TRAJECTORY MEASUREMENTS GROUP C (G) – BAND & X (I) – BAND NONCOHERENT RADAR...Date 00 Apr 2002 Report Type N/A Dates Covered (from... to) - Title and Subtitle C (G)-Band & X (I) - Band Noncoherent Radar Transponder...Number of Pages 157 i STANDARD 262-02 C (G) – BAND & X (I) – BAND NONCOHERENT RADAR TRANSPONDER PERFORMANCE SPECIFICATION STANDARD APRIL 2002 Prepared by

  11. X-Band CubeSat Communication System Demonstration

    NASA Technical Reports Server (NTRS)

    Altunc, Serhat; Kegege, Obadiah; Bundick, Steve; Shaw, Harry; Schaire, Scott; Bussey, George; Crum, Gary; Burke, Jacob C.; Palo, Scott; O'Conor, Darren

    2015-01-01

    Today's CubeSats mostly operate their communications at UHF- and S-band frequencies. UHF band is presently crowded, thus downlink communications are at lower data rates due to bandwidth limitations and are unreliable due to interference. This research presents an end-to-end robust, innovative, compact, efficient and low cost S-band uplink and X-band downlink CubeSat communication system demonstration between a balloon and a Near Earth Network (NEN) ground system. Since communication systems serve as umbilical cords for space missions, demonstration of this X-band communication system is critical for successfully supporting current and future CubeSat communication needs. This research has three main objectives. The first objective is to design, simulate, and test a CubeSat S- and X-band communication system. Satellite Tool Kit (STK) dynamic link budget calculations and HFSS Simulations and modeling results have been used to trade the merit of various designs for small satellite applications. S- and X-band antennas have been tested in the compact antenna test range at Goddard Space Flight Center (GSFC) to gather radiation pattern data. The second objective is simulate and test a CubeSat compatible X-band communication system at 12.5Mbps including S-band antennas, X-band antennas, Laboratory for Atmospheric and Space Physics (LASP) /GSFC transmitter and an S-band receiver from TRL-5 to TRL-8 by the end of this effort. Different X-band communication system components (antennas, diplexers, etc.) from GSFC, other NASA centers, universities, and private companies have been investigated and traded, and a complete component list for the communication system baseline has been developed by performing analytical and numerical analysis. This objective also includes running simulations and performing trades between different X-band antenna systems to optimize communication system performance. The final objective is to perform an end-to-end X-band CubeSat communication system

  12. Exciter For X-Band Transmitter And Receiver

    NASA Technical Reports Server (NTRS)

    Johns, Carl E.

    1989-01-01

    Report describes developmental X-band exciter for X-band uplink subsystem of Deep Space Network. X-band transmitter-exciting signal expected to have fractional frequency stability of 5.2 X 10 to negative 15th power during 1,000-second integration period. Generates coherent test signals for S- and X-band Block III translator of Deep Space Network, Doppler-reference signal for associated Doppler-extractor system, first-local-oscillator signal for associated receiver, and reference signal for associated ranging subsystem. Tests of prototype exciter show controlling and monitoring and internal phase-correcting loops perform according to applicable design criteria. Measurements of stability of frequency and of single-sideband noise spectral density of transmitter-exciting signal made subsequently.

  13. X-band uplink ground systems development: Part 2

    NASA Technical Reports Server (NTRS)

    Johns, C. E.

    1987-01-01

    The prototype X-band exciter testing has been completed. Stability and single-sideband phase noise measurements have been made on the X-band exciter signal (7.145-7.235 GHz) and on the coherent X- and S-band receiver test signals (8.4-8.5 GHz and 2.29-2.3 GHz) generated within the exciter equipment. Outputs are well within error budgets.

  14. Dutch X-band SLAR calibration

    NASA Technical Reports Server (NTRS)

    Groot, J. S.

    1990-01-01

    In August 1989 the NASA/JPL airborne P/L/C-band DC-8 SAR participated in several remote sensing campaigns in Europe. Amongst other test sites, data were obtained of the Flevopolder test site in the Netherlands on August the 16th. The Dutch X-band SLAR was flown on the same date and imaged parts of the same area as the SAR. To calibrate the two imaging radars a set of 33 calibration devices was deployed. 16 trihedrals were used to calibrate a part of the SLAR data. This short paper outlines the X-band SLAR characteristics, the experimental set-up and the calibration method used to calibrate the SLAR data. Finally some preliminary results are given.

  15. X-Band RF Gun Development

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vlieks, Arnold; Dolgashev, Valery; Tantawi, Sami

    In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into themore » structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.« less

  16. Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayers

    NASA Astrophysics Data System (ADS)

    Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.

    2018-04-01

    In systems with breaking of inversion symmetry a perpendicular electric field arises that interacts with the conduction electrons. It may give rise to electron state splitting even without influence of external magnetic field due to the spin-orbital interaction (SOI). Such a removal of the spin degeneracy is called the Rashba effect. Nanostructure with the Rashba effect can be part of a spin transistor. Spin degeneracy can be realized in a channel from a material of this type without additive of magnetic ions. Lack of additive increases the charge carrier mobility and reliability of the device. Ab initio simulations of BiTeX (X=Cl, Br, I) monolayers have been carried out using VASP wherein implemented DFT method. The study of this structures is of interest because such sort of structures can be used their as spin-orbitronics materials. The crystal parameters of BiTeCl, BiTeBr, BiTeI have been determined by the ionic relaxation and static calculations. It is necessary to note that splitting of energy bands occurs in case of SOI included. The values of the Rashba coefficient aR (in the range from 6.25 to 10.00 eV·Å) have high magnitudes for spintronics materials. Band structure of monolayers structures have ideal Rashba electron gas, i.e. there no other energy states near to Fermi level except Rashba states.

  17. Modeling Multi-Bunch X-band Photoinjector Challenges

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Marsh, R A; Anderson, S G; Gibson, D J

    An X-band test station is being developed at LLNL to investigate accelerator optimization for future upgrades to mono-energetic gamma-ray technology at LLNL. The test station will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. Of critical import to the functioning of the LLNL X-band system with multiple electron bunches is the performance of the photoinjector. In depth modeling of the Mark 1 LLNL/SLAC X-band rf photoinjector performance will be presented addressing important challenges that must be addressed in order to fabricate a multi-bunch Mark 2 photoinjector. Emittance performance is evaluated under different nominal electronmore » bunch parameters using electrostatic codes such as PARMELA. Wake potential is analyzed using electromagnetic time domain simulations using the ACE3P code T3P. Plans for multi-bunch experiments and implementation of photoinjector advances for the Mark 2 design will also be discussed.« less

  18. Complete multipactor suppression in an X-band dielectric-loaded accelerating structure

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jing, C.; Gold, S. H.; Fischer, Richard

    2016-05-09

    Multipactor is a major issue limiting the gradient of rf-driven Dielectric-Loaded Accelerating (DLA) structures. Theoretical models have predicted that an axial magnetic field applied to DLA structures may completely block the multipactor discharge. However, previous attempts to demonstrate this magnetic field effect in an X-band traveling-wave DLA structure were inconclusive, due to the axial variation of the applied magnetic field, and showed only partial suppression of the multipactor loading [Jing et al., Appl. Phys. Lett. 103, 213503 (2013)]. The present experiment has been performed under improved conditions with a uniform axial magnetic field extending along the length of an X-bandmore » standing-wave DLA structure. Multipactor loading began to be continuously reduced starting from 3.5 kG applied magnetic field and was completely suppressed at 8 kG. Dependence of multipactor suppression on the rf gradient inside the DLA structure was also measured.« less

  19. The electronic band structure of Ge1-x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-Moss effect

    NASA Astrophysics Data System (ADS)

    Polak, M. P.; Scharoch, P.; Kudrawiec, R.

    2017-05-01

    A comprehensive and detailed study of the composition dependence of lattice constants, band gaps and band offsets has been performed for bulk Ge1-x Sn x alloy in the full composition range using state-of-the-art density functional theory methods. A spectral weight approach to band unfolding has been applied as a means of distinguishing the indirect and direct band gaps from folded supercell band structures. In this way, four characteristic regions of the band gap character have been identified for Ge1-x Sn x alloy: an indirect band gap (x  <  6.5%), a direct band gap (6.5%  <  x  <  25%) and an inverse band gap (x  >  25%) with inverse spin-orbit split-off for 45%  <  x  <  85%. In general, it has been observed that the bowing parameters of band edges (Γ and L-point in conduction band (CBΓ and CB L ), valence band (VB), and spin-orbit (SO) band) are rather large ({{b}\\text{C{{\\text{B}} Γ }}}   =  2.43  ±  0.06 eV, {{b}\\text{C{{\\text{B}}L}}}   =  0.64  ±  0.04 eV, {{b}\\text{VB}}   =  -0.59  ±  0.04 eV, and {{b}\\text{SO}}   =  -0.49  ±  0.05 eV). This indicates that Ge1-x Sn x behaves like a highly mismatched group IV alloy. The composition dependence of lattice constant shows negligible bowing (b a   =  -0.083 Å). Obtained results have been compared with available experimental data. The origin of band gap reduction and large bowing has been analyzed and conclusions have been drawn regarding the relationship between experimental and theoretical results. It is shown that due to the low DOS at the Γ-point, a significant filling of CB by electrons in the direct gap regime may easily take place. Therefore, the Burstein-Moss effect should be considered when comparing experimental data with theoretical predictions as has already been shown for other intrinsic n-type narrow gap semiconductors (e.g. InN).

  20. Zn x Cd1-x S tunable band structure-directing photocatalytic activity and selectivity of visible-light reduction of CO2 into liquid solar fuels

    NASA Astrophysics Data System (ADS)

    Tang, Lanqin; Kuai, Libang; Li, Yichang; Li, Haijin; Zhou, Yong; Zou, Zhigang

    2018-02-01

    A series of Zn x Cd1-x S monodispersed nanospheres were successfully synthesized with tunable band structures. As-prepared Zn x Cd1-x S solid solutions show much enhanced photocatalytic efficiency for CO2 photoreduction in aqueous solutions under visible light irradiation, relative to pure CdS analog. Methanol (CH3OH) and acetaldehyde (CH3CHO) are the major products of CO2 photoreduction for the solid solutions with x = 0, 0.2, and 0.5. Interestingly, Zn0.8Cd0.2S photocatalyst with a wide band gap can also additionally generate ethanol (CH3CH2OH) besides CH3OH and CH3CHO. The balance between the band structure-directing redox capacity and light absorption should be considered to influence both product yield and selectivity of CO2 photoreduction. The possible photoreduction mechanism was tentatively proposed.

  1. Band gap bowing in NixMg1−xO

    PubMed Central

    Niedermeier, Christian A.; Råsander, Mikael; Rhode, Sneha; Kachkanov, Vyacheslav; Zou, Bin; Alford, Neil; Moram, Michelle A.

    2016-01-01

    Epitaxial transparent oxide NixMg1−xO (0 ≤ x ≤ 1) thin films were grown on MgO(100) substrates by pulsed laser deposition. High-resolution synchrotron X-ray diffraction and high-resolution transmission electron microscopy analysis indicate that the thin films are compositionally and structurally homogeneous, forming a completely miscible solid solution. Nevertheless, the composition dependence of the NixMg1−xO optical band gap shows a strong non-parabolic bowing with a discontinuity at dilute NiO concentrations of x < 0.037. Density functional calculations of the NixMg1−xO band structure and the density of states demonstrate that deep Ni 3d levels are introduced into the MgO band gap, which significantly reduce the fundamental gap as confirmed by optical absorption spectra. These states broaden into a Ni 3d-derived conduction band for x > 0.074 and account for the anomalously large band gap narrowing in the NixMg1−xO solid solution system. PMID:27503808

  2. Ground-based testing of the dynamics of flexible space structures using band mechanisms

    NASA Technical Reports Server (NTRS)

    Yang, L. F.; Chew, Meng-Sang

    1991-01-01

    A suspension system based on a band mechanism is studied to provide the free-free conditions for ground based validation testing of flexible space structures. The band mechanism consists of a noncircular disk with a convex profile, preloaded by torsional springs at its center of rotation so that static equilibrium of the test structure is maintained at any vertical location; the gravitational force will be directly counteracted during dynamic testing of the space structure. This noncircular disk within the suspension system can be configured to remain unchanged for test articles with the different weights as long as the torsional spring is replaced to maintain the originally designed frequency ratio of W/k sub s. Simulations of test articles which are modeled as lumped parameter as well as continuous parameter systems, are also presented.

  3. Nitrogen-related intermediate band in P-rich GaN xP yAs 1-x-y alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zelazna, K.; Gladysiewicz, M.; Polak, M. P.

    The electronic band structure of phosphorus-rich GaN xP yAs 1-x-y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. Here, it is shown that incorporation of a few percent of N atoms has a drastic effect on the electronic structure of the alloys. The change of the electronic band structure is very well described by the band anticrossing (BAC) model in which localized nitrogen states interact with the extended states of the conduction band of GaAsP host. The BAC interaction results in the formation of a narrow intermediate bandmore » (E - band in BAC model) with the minimum at the Γ point of the Brillouin zone resulting in a change of the nature of the fundamental band gap from indirect to direct. The splitting of the conduction band by the BAC interaction is further confirmed by a direct observation of the optical transitions to the E + band using contactless electroreflectance spectroscopy.« less

  4. Nitrogen-related intermediate band in P-rich GaN xP yAs 1-x-y alloys

    DOE PAGES

    Zelazna, K.; Gladysiewicz, M.; Polak, M. P.; ...

    2017-11-16

    The electronic band structure of phosphorus-rich GaN xP yAs 1-x-y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. Here, it is shown that incorporation of a few percent of N atoms has a drastic effect on the electronic structure of the alloys. The change of the electronic band structure is very well described by the band anticrossing (BAC) model in which localized nitrogen states interact with the extended states of the conduction band of GaAsP host. The BAC interaction results in the formation of a narrow intermediate bandmore » (E - band in BAC model) with the minimum at the Γ point of the Brillouin zone resulting in a change of the nature of the fundamental band gap from indirect to direct. The splitting of the conduction band by the BAC interaction is further confirmed by a direct observation of the optical transitions to the E + band using contactless electroreflectance spectroscopy.« less

  5. Inflatable Antenna for CubeSat: Extension of the Previously Developed S-Band Design to the X-Band

    NASA Technical Reports Server (NTRS)

    Babuscia, Alessandra; Choi, Thomas; Cheung, Kar-Ming; Thangavelautham, Jekan; Ravichandran, Mithun; Chandra, Aman

    2015-01-01

    The inflatable antenna for CubeSat is a 1 meter antenna reflector designed with one side reflective Mylar, another side clear Mylar with a patch antenna at the focus. The development of this technology responds to the increasing need for more capable communication systems to allow CubeSats to operate autonomously in interplanetary missions. An initial version of the antenna for the S-Band was developed and tested in both anechoic chamber and vacuum chamber. Recent developments in transceivers and amplifiers for CubeSat at X-band motivated the extension from the S-Band to the X-Band. This paper describes the process of extending the design of the antenna to the X-Band focusing on patch antenna redesign, new manufacturing challenges and initial results of experimental tests.

  6. Theoretical band structure of the superconducting antiperovskite oxide Sr3-xSnO

    NASA Astrophysics Data System (ADS)

    Ikeda, Atsutoshi; Fukumoto, Toshiyuki; Oudah, Mohamed; Hausmann, Jan Niklas; Yonezawa, Shingo; Kobayashi, Shingo; Sato, Masatoshi; Tassel, Cédric; Takeiri, Fumitaka; Takatsu, Hiroshi; Kageyama, Hiroshi; Maeno, Yoshiteru

    2018-05-01

    In order to investigate the position of the strontium deficiency in superconductive Sr3-xSnO, we synthesized and measured X-ray-diffraction patterns of Sr3-xSnO (x ∼ 0.5). Because no clear peaks originating from superstructures were observed, strontium deficiency is most likely to be randomly distributed. We also performed first-principles band-structure calculations on Sr3-xSnO (x = 0, 0.5) using two methods: full-potential linearized-augmented plane-wave plus local orbitals method and the Korringa-Kohn-Rostoker Green function method combined with the coherent potential approximation. We revealed that the Fermi energy of Sr3-xSnO in case of x ∼ 0.5 is about 0.8 eV below the original Fermi energy of the stoichiometric Sr3SnO, where the mixing of the valence p and conduction d orbitals are considered to be small.

  7. X-band RF gun and linac for medical Compton scattering X-ray source

    NASA Astrophysics Data System (ADS)

    Dobashi, Katsuhito; Uesaka, Mitsuru; Fukasawa, Atsushi; Sakamoto, Fumito; Ebina, Futaro; Ogino, Haruyuki; Urakawa, Junji; Higo, Toshiyasu; Akemoto, Mitsuo; Hayano, Hitoshi; Nakagawa, Keiichi

    2004-12-01

    Compton scattering hard X-ray source for 10-80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U.Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard (10-80 keV) X-rays with the intensities of 108-1010 photons/s (at several stages) and the table-top size. Second important aspect is to reduce noise radiation at a beam dump by adopting the deceleration of electrons after the Compton scattering. This realizes one beamline of a 3rd generation SR source at small facilities without heavy shielding. The final goal is that the linac and laser are installed on the moving gantry. We have designed the X-band (11.424 GHz) traveling-wave-type linac for the purpose. Numerical consideration by CAIN code and luminosity calculation are performed to estimate the X-ray yield. X-band thermionic-cathode RF-gun and RDS(Round Detuned Structure)-type X-band accelerating structure are applied to generate 50 MeV electron beam with 20 pC microbunches (104) for 1 microsecond RF macro-pulse. The X-ray yield by the electron beam and Q-switch Nd:YAG laser of 2 J/10 ns is 107 photons/RF-pulse (108 photons/sec at 10 pps). We design to adopt a technique of laser circulation to increase the X-ray yield up to 109 photons/pulse (1010 photons/s). 50 MW X-band klystron and compact modulator have been constructed and now under tuning. The construction of the whole system has started. X-ray generation and medical application will be performed in the early next year.

  8. First-principle study of effect of variation of `x' on the band alignment in CZTS1-xSex

    NASA Astrophysics Data System (ADS)

    Ghemud, Vipul; Kshirsagar, Anjali

    2018-04-01

    The present work concentrates on the electronic structure study of CZTS1-xSex alloy with x ranging from 0 to 1. For the alloy study, we have carried out first-principles calculations employing generalized gradient approximation for structural optimization and further hybrid functional approach to compare the optical band gap with that obtained from the experiments. A systematic increase in the lattice parameters with lowering of band gap from 1.52eV to 1.04eV is seen with increasing Se concentration from 0 to 100%, however the lowering of valence band edge and conduction band edge is not linear with the concentration variation. Our results indicate that the lowering of band gap is a result increased Cu:d and Se:p hybridization with increasing `x'.

  9. Small X-Band Oscillator Antennas

    NASA Technical Reports Server (NTRS)

    Lee, Richard Q.; Miranda, Felix A.; Clark, Eric B.; Wilt, David M.; Mueller, Carl H.; Kory, Carol L.; Lambert, Kevin M.

    2009-01-01

    A small, segmented microstrip patch antenna integrated with an X-band feedback oscillator on a high-permittivity substrate has been built and tested. This oscillator antenna is a prototype for demonstrating the feasibility of such devices as compact, low-power-consumption building blocks of advanced, lightweight, phased antenna arrays that would generate steerable beams for communication and remotesensing applications.

  10. Design and Simulation of Microstrip Hairpin Bandpass Filter with Open Stub and Defected Ground Structure (DGS) at X-Band Frequency

    NASA Astrophysics Data System (ADS)

    Hariyadi, T.; Mulyasari, S.; Mukhidin

    2018-02-01

    In this paper we have designed and simulated a Band Pass Filter (BPF) at X-band frequency. This filter is designed for X-band weather radar application with 9500 MHz center frequency and bandwidth -3 dB is 120 MHz. The filter design was performed using a hairpin microstrip combined with an open stub and defected ground structure (DGS). The substrate used is Rogers RT5880 with a dielectric constant of 2.2 and a thickness of 1.575 mm. Based on the simulation results, it is found that the filter works on frequency 9,44 - 9,56 GHz with insertion loss value at pass band is -1,57 dB.

  11. An 'X-banded' Tidbinbilla interferometer

    NASA Technical Reports Server (NTRS)

    Batty, Michael J.; Gardyne, R. G.; Gay, G. J.; Jauncy, David L.; Gulkis, S.; Kirk, A.

    1986-01-01

    The recent upgrading of the Tidbinbilla two-element interferometer to simultaneous S-band (2.3 GHz) and X-band (8.4 GHz) operation has provided a powerful new astronomical facility for weak radio source measurement in the Southern Hemisphere. The new X-band system has a minimum fringe spacing of 38 arcsec, and about the same positional measurement capability (approximately 2 arcsec) and sensitivity (1 s rms noise of 10 mJy) as the previous S-band system. However, the far lower confusion limit will allow detection and accurate positional measurements for sources as weak as a few millijanskys. This capability will be invaluable for observations of radio stars, X-ray sources and other weak, compact radio sources.

  12. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Dey, Anup; Maiti, Biswajit; Chanda Sarkar, Debasree

    2014-04-01

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k→) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg1-xCdxTe, and In1-xGaxAsyP1-y lattice matched to InP, as example of III-V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  13. Valence band offsets of Sc x Ga1-x N/AlN and Sc x Ga1-x N/GaN heterojunctions

    NASA Astrophysics Data System (ADS)

    Tsui, H. C. L.; Goff, L. E.; Palgrave, R. G.; Beere, H. E.; Farrer, I.; Ritchie, D. A.; Moram, M. A.

    2016-07-01

    The valence band offsets of Sc x Ga1-x N/AlN heterojunctions were measured by x-ray photoelectron spectroscopy (XPS) and were found to increase from 0.42 eV to 0.95 eV as the Sc content x increased from 0 to 0.15. The increase in valence band offset with increasing x is attributed to the corresponding increase in spontaneous polarization of the wurtzite structure. The Sc x Ga1-x N/AlN heterojunction is type I, similar to other III-nitride-based heterojunctions. The data also indicate that a type II staggered heterojunction, which can enhance spatial charge separation, could be formed if Sc x Ga1-x N is grown on GaN.

  14. Optical spectra and band structure of Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals: experiment and theory.

    PubMed

    Reshak, A H; Parasyuk, O V; Fedorchuk, A O; Kamarudin, H; Auluck, S; Chyský, J

    2013-12-05

    Theoretical and experimental studies of the Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals are performed. These crystals possess a lot of intrinsic defects which are responsible for their optoelectronic features. The theoretical investigations were performed by means of DFT calculations using different exchange-correlation potentials. The experimental studies were carried out using the modulated VUV ellipsometry for dielectric constants and birefringence studies. The comparison of the structure obtained from X-ray with the theoretically optimized structure is presented. The crucial role of the intrinsic defect states is manifested in the choice of the exchange correlation potential used. The data may be applicable for a large number of the ternary chalcogenides which are sensitive to the presence of the local disordered states near the band edges.

  15. X-band Uplink Ground Systems Development

    NASA Technical Reports Server (NTRS)

    Johns, C. E.

    1984-01-01

    The development of the X-band exciter and Doppler extractor equipment for the X-band uplink was completed. Stability measurements were made on the exciter and Doppler reference signals and the results are presented.

  16. Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices

    DTIC Science & Technology

    2013-03-08

    tions in the studied SLS structures . The fit of the dependence of the valence- band energy of unstrained InAs1!xSbx on the composition x with a... band . STRUCTURES Bulk InAsSb epilayers on metamorphic buffers and InAsSb/InAs strained-layer superlattices (SLS) were grown on GaSb substrates by solid...meV in InAs and Ev = 0 meV in InSb. For InAsSb with 22.5% Sb grown on GaSb , an unstrained valence- band energy of Ev = !457 meV was obtained. For the

  17. Experimental high gradient testing of a 17.1 GHz photonic band-gap accelerator structure

    DOE PAGES

    Munroe, Brian J.; Zhang, JieXi; Xu, Haoran; ...

    2016-03-29

    In this paper, we report the design, fabrication, and high gradient testing of a 17.1 GHz photonic band-gap (PBG) accelerator structure. Photonic band-gap (PBG) structures are promising candidates for electron accelerators capable of high-gradient operation because they have the inherent damping of high order modes required to avoid beam breakup instabilities. The 17.1 GHz PBG structure tested was a single cell structure composed of a triangular array of round copper rods of radius 1.45 mm spaced by 8.05 mm. The test assembly consisted of the test PBG cell located between conventional (pillbox) input and output cells, with input power ofmore » up to 4 MW from a klystron supplied via a TM 01 mode launcher. Breakdown at high gradient was observed by diagnostics including reflected power, downstream and upstream current monitors and visible light emission. The testing procedure was first benchmarked with a conventional disc-loaded waveguide structure, which reached a gradient of 87 MV=m at a breakdown probability of 1.19 × 10 –1 per pulse per meter. The PBG structure was tested with 100 ns pulses at gradient levels of less than 90 MV=m in order to limit the surface temperature rise to 120 K. The PBG structure reached up to 89 MV=m at a breakdown probability of 1.09 × 10 –1 per pulse per meter. These test results show that a PBG structure can simultaneously operate at high gradients and low breakdown probability, while also providing wakefield damping.« less

  18. Electronic structure of ZrX2 (X = Se, Te)

    NASA Astrophysics Data System (ADS)

    Shkvarin, A. S.; Merentsov, A. I.; Shkvarina, E. G.; Yarmoshenko, Yu. M.; Píš, I.; Nappini, S.; Titov, A. N.

    2018-03-01

    The electronic structure of the ZrX2 (X = Se, Te) compounds has been studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray absorption spectra, and density of electronic states. It was found that the absorption spectra and valence band spectra are influenced by the chalcogen type. The results of the multiplet calculation of the Zr4+ atom show that the change in the splitting in the crystal field, which is described by the 10Dq parameter, is due to the change in the ratio of covalent and ionic contributions to the chemical bond. The resonance band near the Fermi level in the valence band spectra is observed for ZrTe2 in the Zr 3p-4d resonant excitation mode. The extent of photon energy indicates the charge localization on the Zr atom. Similar resonance band for ZrSe2 is absent; it indicates the presence of a gap at the Fermi level.

  19. X-band noise temperature effects of rain on DSN antenna feedhorns

    NASA Technical Reports Server (NTRS)

    Slobin, S. D.; Franco, M. M.; Clauss, R. C.

    1982-01-01

    Simulated rain tests were carried out to determine the noise temperature contribution of liquid water adhering to the aperture cover material on both a standard DSN X-band feedhorn and on an S/X-band common aperture feedhorn. It was found that for the particular common aperture feedhorn tested, system noise temperature increases were much greater when the plastic horn cover material was old and weathered than when it was new. The age and condition of the aperture cover material is believed to be a major factor in the amount of degradation experienced by a telecommunications system during rain events.

  20. Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Goumri-Said, Souraya; Tahir, S. A.

    2018-05-01

    Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

  1. Mariner Venus Mercury 1973 S/X-band experiment

    NASA Technical Reports Server (NTRS)

    Levy, G. S.

    1977-01-01

    The S/X-band experiment on the Mariner Venus/Mercury 1973 spacecraft constituted a unique opportunity to demonstrate the capability of an X-band downlink coherent with the normal S-band downlink. This was both a technological and scientific experiment, and the results indicated that it was successful in both cases. Analysis of the tracking data shows that the new S/X data type was capable of reducing the miss distance at the planet Mercury by 80% (post-processed data). The use of S/X electron content was demonstrated by comparison with Faraday rotation data. An X-band turnaround telemetry experiment showed the feasibility of a planetary X-band link. In the science area, the model atmospheric environment of Venus was refined. The ionosphere of the planet was measured to a higher accuracy than before, and the value of the dual-frequency link for measuring the scale size of turbulence was demonstrated. The estimate of the scale size was increased from 100 m to above 5 km.

  2. A programmable ultra-low noise X-band exciter.

    PubMed

    MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

    2001-07-01

    A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

  3. Energy band gap and spectroscopic studies in Mn{sub 1-x}Cu{sub x}WO{sub 4} (0 ≤ x ≤ 0.125)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mal, Priyanath; Rambabu, P.; Turpu, G. R.

    2016-05-06

    A study on the effect of nonmagnetic Cu{sup 2+} substitution at Mn{sup 2+} site on the structural and energy band gap of the MnWO{sub 4} is reported. Convenient solid state reaction route has been adopted for the synthesis of Mn{sub 1-x}Cu{sub x}WO{sub 4}. X-ray diffraction (XRD) pattern showed high crystalline quality of the prepared samples. Raman spectroscopic studies were carried out to understand the structural aspects of the doping. 15 Raman active modes were identified out of 18, predicted for wolframite type monoclinic structure of MnWO{sub 4}. UV-visible diffuse reflectance spectra were recorded and analyzed to get energy band gapmore » of the studied system and are found in the range of 2.5 eV to 2.04 eV with a systematic decrease with the increase in Cu{sup 2+} concentration. Energy band gap values are verified by Density Functional Theory calculations based on projector augmented wave (PAW) method. The calculated values are in good agreement with the experimental data.« less

  4. Preliminary experimental investigation of an X-band Cerenkov-type high power microwave oscillator without guiding magnetic field.

    PubMed

    Guo, Liming; Shu, Ting; Li, Zhiqiang; Ju, Jinchuan; Fang, Xiaoting

    2017-02-01

    Among high power microwave (HPM) generators without guiding magnetic field, Cerenkov-type oscillator is expected to achieve a relatively high efficiency, which has already been realized in X-band in our previous simulation work. This paper presents the preliminary experimental investigations into an X-band Cerenkov-type HPM oscillator without guiding magnetic field. Based on the previous simulation structure, some modifications regarding diode structure were made. Different cathode structures and materials were tested in the experiments. By using a ring-shaped graphite cathode, microwave of about one hundred megawatt level was generated with a pure center frequency of 9.14 GHz, and an efficiency of about 1.3%. As analyzed in the paper, some practical issues reduce the efficiency in experiments, such as real features of the electron beam, probable breakdown regions on the cathode surface which can damage the diode, and so forth.

  5. Simulation of radar backscattering from snowpack at X-band and Ku-band

    NASA Astrophysics Data System (ADS)

    Gay, Michel; Phan, Xuan-Vu; Ferro-Famil, Laurent

    2016-04-01

    This paper presents a multilayer snowpack electromagnetic backscattering model, based on Dense Media Radiative Transfer (DMRT). This model is capable of simulating the interaction of electromagnetic wave (EMW) at X-band and Ku-band frequencies with multilayer snowpack. The air-snow interface and snow-ground backscattering components are calculated using the Integral Equation Model (IEM) by [1], whereas the volume backscattering component is calculated based on the solution of Vector Radiative Transfer (VRT) equation at order 1. Case study has been carried out using measurement data from NoSREx project [2], which include SnowScat data in X-band and Ku-band, TerraSAR-X acquisitions and snowpack stratigraphic in-situ measurements. The results of model simulations show good agreement with the radar observations, and therefore allow the DMRT model to be used in various applications, such as data assimilation [3]. [1] A.K. Fung and K.S. Chen, "An update on the iem surface backscattering model," Geoscience and Remote Sensing Letters, IEEE, vol. 1, no. 2, pp. 75 - 77, april 2004. [2] J. Lemmetyinen, A. Kontu, J. Pulliainen, A. Wiesmann, C. Werner, T. Nagler, H. Rott, and M. Heidinger, "Technical assistance for the deployment of an x- to ku-band scatterometer during the nosrex ii experiment," Final Report, ESA ESTEC Contract No. 22671/09/NL/JA., 2011. [3] X. V. Phan, L. Ferro-Famil, M. Gay, Y. Durand, M. Dumont, S. Morin, S. Allain, G. D'Urso, and A. Girard, "3d-var multilayer assimilation of x-band sar data into a detailed snowpack model," The Cryosphere Discussions, vol. 7, no. 5, pp. 4881-4912, 2013.

  6. Electrical and band structural analyses of Ti1-x Al x O y films grown by atomic layer deposition on p-type GaAs

    NASA Astrophysics Data System (ADS)

    An, Youngseo; Mahata, Chandreswar; Lee, Changmin; Choi, Sungho; Byun, Young-Chul; Kang, Yu-Seon; Lee, Taeyoon; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub

    2015-10-01

    Amorphous Ti1-x Al x O y films in the Ti-oxide-rich regime (x  <  0.5) were deposited on p-type GaAs via atomic layer deposition with titanium isopropoxide, trimethylaluminum, and H2O precursor chemistry. The electrical properties and energy band alignments were examined for the resulting materials with their underlying substrates, and significant frequency dispersion was observed in the accumulation region of the Ti-oxide-rich Ti1-x Al x O y films. Although a further reduction in the frequency dispersion and leakage current (under gate electron injection) could be somewhat achieved through a greater addition of Al-oxide in the Ti1-x Al x O y film, the simultaneous decrease in the dielectric constant proved problematic in finding an optimal composition for application as a gate dielectric on GaAs. The spectroscopic band alignment measurements of the Ti-oxide-rich Ti1-x Al x O y films indicated that the band gaps had a rather slow increase with the addition of Al-oxide, which was primarily compensated for by an increase in the valance band offset, while a nearly-constant conduction band offset with a negative electron barrier height was maintained.

  7. Inverted S-Shaped Compact Antenna for X-Band Applications

    PubMed Central

    Samsuzzaman, M.; Islam, M. T.

    2014-01-01

    A novel probe-fed compact inverted S-shaped multifrequency patch antenna is designed. By employing two rectangular slots that change the conventional rectangular patch into an inverted S-shaped patch, the antenna is able to operate in triple frequency in the X-band. The performance criteria of the proposed design have been experimentally verified by fabricating a printed prototype. The measured results show that the −10 dB impedance bandwidth of the proposed antenna at lower band is 5.02% (8.69–9.14 GHz), at middle band is 9.13% (10.47–11.48 GHz), and at upper band is 3.79% (11.53–11.98 GHz). Two elliptical slots are introduced in the ground plane to increase the peak gain. The antenna is excited by a simple probe feeding mechanism. The overall antenna dimension is  0.52λ × 0.60λ × 0.046λ at a lower resonance frequency of 9.08 GHz. The antenna configuration and parametric investigation are conducted with the help of the high frequency structural simulator, and a good agreement is achieved between the simulated and measured data. The stable gain, omnidirectional radiation pattern, and consistent radiation efficiency in the achieved operating band make the proposed antenna a suitable candidate for X-band applications. PMID:24895656

  8. A Theoretical Structure of High School Concert Band Performance

    ERIC Educational Resources Information Center

    Bergee, Martin J.

    2015-01-01

    This study used exploratory (EFA) and confirmatory factor analysis (CFA) to verify a theoretical structure for high school concert band performance and to test that structure for viability, generality, and invariance. A total of 101 university students enrolled in two different bands rated two high school band performances (a "first"…

  9. Simultaneous S- and X-band uplink-downlink performance at DSS 13

    NASA Technical Reports Server (NTRS)

    Freiley, A. J.

    1988-01-01

    The Deep Space Station 13 26-meter antenna with the second generation S/X feedcone was tested to determine the dual S- and X-band (2.1 to 2.3 GHz and 7.1 to 8.5 GHz) transmit and receive performance. Measurements were conducted using the 20 kW transmitters at S- and X-band while simultaneously receiving S- and X-band. This system proved to be very quiet compared with the other DSN antennas. Under normal tracking configurations, no noise burst or intermodulation product (IMP) activity was detectable to the -175 dBm level. To prove the instrumentation's ability to detect such phenomena, an IMP generator was introduced onto the system with positive, verifiable results. The IMP occurred at the -162 dBm level, accompanied by moderate noise burst activity, and was readily repeatable. The measurement also showed the possible need for additional fourth channel filtering in the system to reduce the effect of the transmitter power on the low noise amplifiers.

  10. Interacting quasi-band theory for electronic states in compound semiconductor alloys: Wurtzite structure

    NASA Astrophysics Data System (ADS)

    Kishi, Ayaka; Oda, Masato; Shinozuka, Yuzo

    2016-05-01

    This paper reports on the electronic states of compound semiconductor alloys of wurtzite structure calculated by the recently proposed interacting quasi-band (IQB) theory combined with empirical sp3 tight-binding models. Solving derived quasi-Hamiltonian 24 × 24 matrix that is characterized by the crystal parameters of the constituents facilitates the calculation of the conduction and valence bands of wurtzite alloys for arbitrary concentrations under a unified scheme. The theory is applied to III-V and II-VI wurtzite alloys: cation-substituted Al1- x Ga x N and Ga1- x In x N and anion-substituted CdS1- x Se x and ZnO1- x S x . The obtained results agree well with the experimental data, and are discussed in terms of mutual mixing between the quasi-localized states (QLS) and quasi-average bands (QAB): the latter bands are approximately given by the virtual crystal approximation (VCA). The changes in the valence and conduction bands, and the origin of the band gap bowing are discussed on the basis of mixing character.

  11. Effect of tree structure on X-band microwave signature of conifers

    NASA Technical Reports Server (NTRS)

    Mougin, Eric; Lopes, Armand; Karam, Mostafa A.; Fung, Adrian K.

    1993-01-01

    Experimental studies are performed on some coniferous trees (Austrian pine, Nordmann spruce, and Norway spruce) to investigate the relation between the tree architecture and radar signal at X-band. For a single tree, the RCS is measured as a function of the scatterer location at 90 deg incidence. It is found that the main scatterers are the leafy branches and the difference between sigma(vv) and sigma(hh) is significant at the upper portion of the tree. At the lower portion of the tree, sigma(vv) and sigma(hh) have almost the same level. For a group of trees the angular trends of sigma(vv) and sigma(hh) are measured. It is found that the levels of sigma(vv) and sigma(hh) are of the same order, but their angular trends vary from one tree species to the other depending on the tree species structure. The interpretation of these experimental results is carried out with the help of a theoretical model which accounts for the structure of the tree. According to this theoretical study, the major scattering trend is due to the leaves, while the perturbation to the angular trend and the level difference between sigma(vv) and sigma(hh) are due to the branch orientation distributions (i.e., the tree architecture).

  12. Pulsed laser deposited BexZn1-xO1-ySy quaternary alloy films: structure, composition, and band gap bowing

    NASA Astrophysics Data System (ADS)

    Zhang, Wuzhong; Xu, Maji; Zhang, Mi; Cheng, Hailing; Li, Mingkai; Zhang, Qingfeng; Lu, Yinmei; Chen, Jingwen; Chen, Changqing; He, Yunbin

    2018-03-01

    In this work, c-axis preferentially oriented BexZn1-xO1-ySy (BeZnOS) quaternary alloy films were prepared successfully on c-plane sapphire by pulsed laser deposition for the first time. By appropriate adjustment of O2 pressure during the deposition, the grown films exhibited a single-phase hexagonal structure and good crystalline quality. The solid solubility of S in BexZn1-xO1-ySy quaternary alloy was significantly expanded (y ≤ 0.17 or y ≥ 0.35) as a result of simultaneous substitution of cation Zn2+ by smaller Be2+ and anion O2- by bigger S2-. Besides, due to the introduction of BeO with a wide band gap, BeZnOS quaternary films exhibited wider band gaps than the ternary ZnOS films with similar S contents. As the O2 pressure increased from 0.05 Pa to 6 Pa, the band gap of BeZnOS displayed an interesting bowing behavior. The variation range of the band gap was between 3.55 eV and 3.10 eV. The BeZnOS films with a wide band gap show potential applications in fabricating optoelectronic devices such as UV-detectors.

  13. Effective band structure of random III-V alloys

    NASA Astrophysics Data System (ADS)

    Popescu, Voicu; Zunger, Alex

    2010-03-01

    Random substitutional alloys have no long range order (LRO) or translational symmetry so rigorously speaking they have no E(k) band structure or manifestations thereof. Yet, many experiments on alloys are interpreted using the language of band theory, e.g. inferring Van Hove singularities, band dispersion and effective masses. Many standard alloy theories (VCA- or CPA-based) have the LRO imposed on the alloy Hamiltonian, assuming only on-site disorder, so they can not be used to judge the extent of LRO that really exists. We adopt the opposite way, by using large (thousand atom) randomly generated supercells in which chemically identical alloy atoms are allowed to have different local environments (a polymorphous representation). This then drives site-dependent atomic relaxation as well as potential fluctuations. The eigenstates from such supercells are then mapped onto the Brillouin zone (BZ) of the primitive cell, producing effective band dispersion. Results for (In,Ga)X show band-like behaviour only near the centre and faces of the BZ but rapidly lose such characteristics away from γ or for higher bands. We further analyse the effects of stoichiometry variation, internal relaxation, and short-range order on the alloy band structure.

  14. Computer-Automated Evolution of Spacecraft X-Band Antennas

    NASA Technical Reports Server (NTRS)

    Lohn, Jason D.; Homby, Gregory S.; Linden, Derek S.

    2010-01-01

    A document discusses the use of computer- aided evolution in arriving at a design for X-band communication antennas for NASA s three Space Technology 5 (ST5) satellites, which were launched on March 22, 2006. Two evolutionary algorithms, incorporating different representations of the antenna design and different fitness functions, were used to automatically design and optimize an X-band antenna design. A set of antenna designs satisfying initial ST5 mission requirements was evolved by use these algorithms. The two best antennas - one from each evolutionary algorithm - were built. During flight-qualification testing of these antennas, the mission requirements were changed. After minimal changes in the evolutionary algorithms - mostly in the fitness functions - new antenna designs satisfying the changed mission requirements were evolved and within one month of this change, two new antennas were designed and prototypes of the antennas were built and tested. One of these newly evolved antennas was approved for deployment on the ST5 mission, and flight-qualified versions of this design were built and installed on the spacecraft. At the time of writing the document, these antennas were the first computer-evolved hardware in outer space.

  15. Zn(x)Cd(1-x)Se nanomultipods with tunable band gaps: synthesis and first-principles calculations.

    PubMed

    Wei, Hao; Su, Yanjie; Han, Ziyi; Li, Tongtong; Ren, Xinglong; Yang, Zhi; Wei, Liangming; Cong, Fengsong; Zhang, Yafei

    2013-06-14

    In this paper, we demonstrate that ZnxCd1-xSe nanomultipods can be synthesized via a facile and nontoxic solution-based method. Interesting aspects of composition, morphology and optical properties were deeply explored. The value of Zn/(Zn+Cd) could be altered across the entire range from 0.08 to 0.86 by varying the ratio of cation precursor contents. The band gap energy could be linearly tuned from 1.88 to 2.48 eV with respect to the value of Zn/(Zn+Cd). The experiment also showed that oleylamine played a dominant role in the formation of multipod structure. A possible growth mechanism was further suggested. First-principles calculations of band gap energy and density of states in the Vienna ab initio simulation package code were performed to verify the experimental variation tendency of the band gap. Computational results indicated that dissimilarities of electronic band structures and orbital constitutions determined the tunable band gap of the as-synthesized nanomultipod, which might be promising for versatile applications in relevant areas of solar cells, biomedicine, sensors, catalysts and so on.

  16. E+ Transition in GaAs1-xNx and GaAs1-xBix Due to Isoelectronic-Impurity-Induced Perturbation of the Conduction Band

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fluegel, B.; Mascarenhas, A.; Ptak, A. J.

    2007-01-01

    An above-band-gap transition E{sub +} is experimentally observed in the dilute GaAs{sub 1-x}Bi{sub x} alloy. Precise measurements at very low dilutions are made of the above-band-gap transition E{sub +} that is observed in GaAs{sub 1-x}N{sub x}, making it possible to compare the behavior of the different isoelectronic traps Bi and N in the common host GaAs with respect to their perturbation to the host electronic structure. We suggest that the origin of the E{sub +} level observed in GaAs is not the isolated isoelectronic impurity level N{sub x}, as is presumed in the band-anticrossing model, but rather the isoelectronic-impurity-induced perturbationmore » of the conduction band L{sub 6}{sup c}.« less

  17. X-SAR: The X-band synthetic aperture radar on board the Space Shuttle

    NASA Technical Reports Server (NTRS)

    Werner, Marian U.

    1993-01-01

    The X-band synthetic aperture radar (X-SAR) is the German/Italian contribution to the NASA/JPL Shuttle Radar Lab missions as part of the preparation for the Earth Observation System (EOS) program. The Shuttle Radar Lab is a combination of several radars: an L-band (1.2 GHz) and a C-band (5.3 GHz) multipolarization SAR known as SIR-C (Shuttle Imaging Radar); and an X-band (9.6 GHz) vertically polarized SAR which will be operated synchronously over the same target areas to deliver calibrated multifrequency and multipolarization SAR data at multiple incidence angles from space. A joint German/Italian project office at DARA (German Space Agency) is responsible for the management of the X-SAR project. The space hardware has been developed and manufactured under industrial contract by Dornier and Alenia Spazio. Besides supporting all the technical and scientific tasks, DLR, in cooperation with ASI (Agencia Spaziale Italiano) is responsible for mission operation, calibration, and high precision SAR processing. In addition, DLR developed an airborne X-band SAR to support the experimenters with campaigns to prepare for the missions. The main advantage of adding a shorter wavelength (3 cm) radar to the SIR-C radars is the X-band radar's weaker penetration into vegetation and soil and its high sensitivity to surface roughness and associated phenomena. The performance of each of the three radars is comparable with respect to radiometric and geometric resolution.

  18. Highly mismatched GaN1-x Sb x alloys: synthesis, structure and electronic properties

    NASA Astrophysics Data System (ADS)

    Yu, K. M.; Sarney, W. L.; Novikov, S. V.; Segercrantz, N.; Ting, M.; Shaw, M.; Svensson, S. P.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2016-08-01

    Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaN x Sb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-x Sb x HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-x Sb x HMA over the entire composition range is well described by a modified BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaN x Sb1-x is general and is applicable to any HMA.

  19. Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO{sub 3}]{sub 1−x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3−δ}]{sub x} ferroelectrics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhou, Wenliang; Yang, Pingxiong, E-mail: pxyang@ee.ecnu.edu.cn; Chu, Junhao

    2014-09-15

    Structural phase transition, narrow band gap (E{sub g}), and room-temperature ferromagnetism (RTFM) have been observed in the [KNbO{sub 3}]{sub 1−x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3−δ}]{sub x} (KBNNO) ceramics. All the samples have single phase perovskite structure, but exhibit a gradual transition behaviour from the orthorhombic to a cubic structure with the increase of x. Raman spectroscopy analysis not only corroborates this doping-induced change in normal structure but also shows the local crystal symmetry for x ≥ 0.1 compositions to deviate from the idealized cubic perovskite structure. A possible mechanism for the observed specific changes in lattice structure is discussed. Moreover, it ismore » noted that KBNNO with compositions x = 0.1–0.3 have quite narrow E{sub g} of below 1.5 eV, much smaller than the 3.2 eV band gap of parent KNbO{sub 3} (KNO), which is due to the increasing Ni 3d electronic states within the gap of KNO. Furthermore, the KBNNO materials present RTFM near a tetragonal to cubic phase boundary. With increasing x from 0 to 0.3, the magnetism of the samples develops from diamagnetism to ferromagnetism and paramagnetism, originating from the ferromagnetic–antiferromagnetic competition. These results are helpful in the deeper understanding of phase transitions, band gap tunability, and magnetism variations in perovskite oxides and show the potential role, such materials can play, in perovskite solar cells and multiferroic applications.« less

  20. Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

    NASA Astrophysics Data System (ADS)

    Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

    2017-10-01

    The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

  1. Stable monolayer honeycomb-like structures of RuX2 (X =S,Se)

    NASA Astrophysics Data System (ADS)

    Ersan, Fatih; Cahangirov, Seymur; Gökoǧlu, Gökhan; Rubio, Angel; Aktürk, Ethem

    2016-10-01

    Recent studies show that several metal oxides and dichalcogenides (M X2) , which exist in nature, can be stable in two-dimensional (2D) form and each year several new M X2 structures are explored. The unstable structures in H (hexagonal) or T (octahedral) forms can be stabilized through Peierls distortion. In this paper, we propose new 2D forms of RuS2 and RuSe2 materials. We investigate in detail the stability, electronic, magnetic, optical, and thermodynamic properties of 2D Ru X2 (X =S,Se) structures from first principles. While their H and T structures are unstable, the distorted T structures (T'-Ru X2) are stable and have a nonmagnetic semiconducting ground state. The molecular dynamic simulations also confirm that T'-Ru X2 systems are stable even at 500 K without any structural deformation. T'-RuS2 and T'-RuSe2 have indirect band gaps with 0.745 eV (1.694 eV with HSE) and 0.798 eV (1.675 eV with HSE) gap values, respectively. We also examine their bilayer and trilayer forms and find direct and smaller band gaps. We find that AA stacking is more favorable than the AB configuration. The new 2D materials obtained can be good candidates with striking properties for applications in semiconductor electronic, optoelectronic devices, and sensor technology.

  2. Autocorrelation structure of convective rainfall in semiarid-arid climate derived from high-resolution X-Band radar estimates

    NASA Astrophysics Data System (ADS)

    Marra, Francesco; Morin, Efrat

    2018-02-01

    Small scale rainfall variability is a key factor driving runoff response in fast responding systems, such as mountainous, urban and arid catchments. In this paper, the spatial-temporal autocorrelation structure of convective rainfall is derived with extremely high resolutions (60 m, 1 min) using estimates from an X-Band weather radar recently installed in a semiarid-arid area. The 2-dimensional spatial autocorrelation of convective rainfall fields and the temporal autocorrelation of point-wise and distributed rainfall fields are examined. The autocorrelation structures are characterized by spatial anisotropy, correlation distances 1.5-2.8 km and rarely exceeding 5 km, and time-correlation distances 1.8-6.4 min and rarely exceeding 10 min. The observed spatial variability is expected to negatively affect estimates from rain gauges and microwave links rather than satellite and C-/S-Band radars; conversely, the temporal variability is expected to negatively affect remote sensing estimates rather than rain gauges. The presented results provide quantitative information for stochastic weather generators, cloud-resolving models, dryland hydrologic and agricultural models, and multi-sensor merging techniques.

  3. Impurity-Band Model for GaP1-xNx

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fluegel, B.; Zhang, Y.; Geisz, J. F.

    2005-11-01

    Low-temperature absorption studies on free-standing GaP1-xNx films provide direct experimental evidence that the host conduction-band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping, contrary to what has been suggested recently; rather, it remains stationary for x up to 0.1%. This fact, combined with the results of earlier studies of the CBM at ..GAMMA.. and conduction-band edge near L, confirms that the giant bandgap lowering observed in GaP1-xNx results from a CBM that evolves purely from nitrogen impurity bands.

  4. A collection of articles on S/X-band experiment zero delay ranging tests, volume 1

    NASA Technical Reports Server (NTRS)

    Otoshi, T. Y. (Editor)

    1975-01-01

    Articles are presented which are concerned with the development of special test equipment and a dual-frequency zero delay device (ZDD) that were required for range tests and the measurement of ground station delays for the Mariner-Venus-Mercury 1973 S/X-band experiment. Test data obtained at DSS 14 after installation of the ZDD on the 64-m antenna are given. It is shown that large variations of range were observed as a function of antenna elevation angle and were sensitive to antenna location. A ranging calibration configuration that was subsequently developed and a technique for determining the appropriate Z-correction are described. Zero delay test data at DSS 14 during the Mariner 10 Venus-Mercury-Encounter periods (1974 days 12-150) are presented. The theoretical analysis and experimental verifications are included of the effects of multipath and effects of discontinuities on range delay measurements. A movable subreflector technique and the multipath theory were used to isolate principal multipath errors on the 64-m antenna and to enable a more accurate determination of the actual ground station range delay.

  5. Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

    NASA Astrophysics Data System (ADS)

    Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.

    2015-02-01

    To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.

  6. Electronic Band Structure Tuning of Highly-Mismatched-Alloys for Energy Conversion Applications

    NASA Astrophysics Data System (ADS)

    Ting, Min

    Highly-mismatched alloys: ZnO1-xTe x and GaN1-xSb x are discussed within the context of finding the suitable material for a cost-effective Si-based tandem solar cell (SBTSC). SBTSC is an attractive concept for breaking through the energy conversion efficiency theoretical limit of a single junction solar cell. Combining with a material of 1.8 eV band gap, SBTSC can theoretically achieve energy conversion efficiency > 45%. ZnO and GaN are wide band gap semiconductors. Alloying Te in ZnO and alloying Sb in GaN result in large band gap reduction to < 2 eV from 3.3 eV and 3.4 eV respectively. The band gap reduction is majorly achieved by the upward shift of valence band (VB). Incorporating Te in ZnO modifies the VB of ZnO through the valence-band anticrossing (VBAC) interaction between localized Te states and ZnO VB delocalized states, which forms a Te-derived VB at 1 eV above the host VB. Similar band structure modification is resulted from alloying Sb in GaN. Zn1-xTex and GaN 1-xSbx thin films are synthesized across the whole composition range by pulsed laser deposition (PLD) and low temperature molecular beam epitaxy (LT-MBE) respectively. The electronic band edges of these alloys are measured by synchrotron X-ray absorption, emission, and the X-ray photoelectron spectroscopies. Modeling the optical absorption coefficient with the band anticrossing (BAC) model revealed that the Te and Sb defect levels to be at 0.99 eV and 1.2 eV above the VB of ZnO and GaN respectively. Electrically, Zn1-xTex is readily n-type conductive and GaN1-xSbx is strongly p-type conductive. A heterojunction device of p-type GaN 0.93Sb0.07 with n-type ZnO0.77Te0.93 upper cell (band gap at 1.8 eV) on Si bottom cell is proposed as a promising SBTSC device.

  7. The application of airborne imaging radars (L and X-band) to earth resources problems

    NASA Technical Reports Server (NTRS)

    Drake, B.; Shuchman, R. A.; Bryan, M. L.; Larson, R. W.; Liskow, C. L.; Rendleman, R. A.

    1974-01-01

    A multiplexed synthetic aperture Side-Looking Airborne Radar (SLAR) that simultaneously images the terrain with X-band (3.2 cm) and L-band (23.0 cm) radar wavelengths was developed. The Feasibility of using multiplexed SLAR to obtain useful information for earth resources purposes. The SLAR imagery, aerial photographs, and infrared imagery are examined to determine the qualitative tone and texture of many rural land-use features imaged. The results show that: (1) Neither X- nor L-band SLAR at moderate and low depression angles can directly or indirectly detect pools of water under standing vegetation. (2) Many of the urban and rural land-use categories present in the test areas can be identified and mapped on the multiplexed SLAR imagery. (3) Water resources management can be done using multiplexed SLAR. (4) Drainage patterns can be determined on both the X- and L-band imagery.

  8. Interacting quasi-band model for electronic states in compound semiconductor alloys: Zincblende structure

    NASA Astrophysics Data System (ADS)

    Shinozuka, Yuzo; Oda, Masato

    2015-09-01

    The interacting quasi-band model proposed for electronic states in simple alloys is extended for compound semiconductor alloys with general lattice structures containing several atoms per unit cell. Using a tight-binding model, a variational electronic wave function for quasi-Bloch states yields a non-Hermitian Hamiltonian matrix characterized by matrix elements of constituent crystals and concentration of constituents. Solving secular equations for each k-state yields the alloy’s energy spectrum for any type of randomness and arbitrary concentration. The theory is used to address III-V (II-VI) alloys with a zincblende lattice with crystal band structures well represented by the sp3s* model. Using the resulting 15 × 15 matrix, the concentration dependence of valence and conduction bands is calculated in a unified scheme for typical alloys: Al1-xGaxAs, GaAs1-xPx, and GaSb1-xPx. Results agree well with experiments and are discussed with respect to the concentration dependence, direct-indirect gap transition, and band-gap-bowing origin.

  9. X/X/Ka-band prime focus feed antenna for the Mars Observer beacon spacecraft

    NASA Technical Reports Server (NTRS)

    Stanton, P.; Reilly, H.; Esquivel, M.

    1988-01-01

    The results of an X/X/Ka-band feed design concept demonstration are presented. The purpose is to show the feasibility of adding a Ka-band beacon to the Mars Observer spacecraft. Scale model radiation patterns were made and analyzed.

  10. Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications

    NASA Astrophysics Data System (ADS)

    Lenka, Manas K.; Sharma, Amit; Sharma, Jaibir; DasGupta, Amitava

    2012-10-01

    This paper describes the design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches with modified coplanar waveguide (CPW) configuration for X-band and Ku-band applications exhibiting high isolation and low insertion loss. By modifying the basic CPW structure for a six-strip membrane having length 720 μm, the resonant frequency can be reduced from 33.5 GHz to 13.5 GHz with isolation as high as -30 dB(-63 dB at resonant frequency) in Ku-band. Similar results are also found in case SPST and SPDT switches with other membrane types.

  11. Standard Observing Bands: Is Now the Time to Replace S/X with X/Ka?

    NASA Technical Reports Server (NTRS)

    Jacobs, C. S.; Lanyi, G. E.; Naudet, C. J.

    2004-01-01

    In this paper we will argue that the VLBI community should be developing a road map to transition from S/X to simultaneous X and Ka-band (32 GHz) observations. There are both negative and positive reasons for planning such a transition. On the negative side, we will outline concerns that S-band observations may be headed toward obsolescence. On the positive side, we will refer to evidence that X/Ka has potential for providing a more stable reference frame than S/X. We will propose timetables for a transition to X/Ka observing starting from the current status of X/Ka and plans that are now taking shape. First X/Ka fringes were obtained in 2001 with the Deep Space Network. Future plans will be discussed including a proposed X/Ka-band upgrade to the VLBA. Lastly, we will consider the need for a period of overlap between S/X and X/Ka so that the long and rich history of astrometric and geodetic VLBI is not compromised.

  12. Effects of microstructure banding on hydrogen assisted fatigue crack growth in X65 pipeline steels

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ronevich, Joseph A.; Somerday, Brian P.; San Marchi, Chris W.

    Banded ferrite-pearlite X65 pipeline steel was tested in high pressure hydrogen gas to evaluate the effects of oriented pearlite on hydrogen assisted fatigue crack growth. Test specimens were oriented in the steel pipe such that cracks propagated either parallel or perpendicular to the banded pearlite. The ferrite-pearlite microstructure exhibited orientation dependent behavior in which fatigue crack growth rates were significantly lower for cracks oriented perpendicular to the banded pearlite compared to cracks oriented parallel to the bands. Thus the reduction of hydrogen assisted fatigue crack growth across the banded pearlite is attributed to a combination of crack-tip branching and impededmore » hydrogen diffusion across the banded pearlite.« less

  13. Effects of microstructure banding on hydrogen assisted fatigue crack growth in X65 pipeline steels

    DOE PAGES

    Ronevich, Joseph A.; Somerday, Brian P.; San Marchi, Chris W.

    2015-09-10

    Banded ferrite-pearlite X65 pipeline steel was tested in high pressure hydrogen gas to evaluate the effects of oriented pearlite on hydrogen assisted fatigue crack growth. Test specimens were oriented in the steel pipe such that cracks propagated either parallel or perpendicular to the banded pearlite. The ferrite-pearlite microstructure exhibited orientation dependent behavior in which fatigue crack growth rates were significantly lower for cracks oriented perpendicular to the banded pearlite compared to cracks oriented parallel to the bands. Thus the reduction of hydrogen assisted fatigue crack growth across the banded pearlite is attributed to a combination of crack-tip branching and impededmore » hydrogen diffusion across the banded pearlite.« less

  14. X-band preamplifier filter

    NASA Technical Reports Server (NTRS)

    Manshadi, F.

    1986-01-01

    A low-loss bandstop filter designed and developed for the Deep Space Network's 34-meter high-efficiency antennas is described. The filter is used for protection of the X-band traveling wave masers from the 20-kW transmitter signal. A combination of empirical and theoretical techniques was employed as well as computer simulation to verify the design before fabrication.

  15. Electronic structures of U X3 (X =Al , Ga, and In) studied by photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Fujimori, Shin-ichi; Kobata, Masaaki; Takeda, Yukiharu; Okane, Tetsuo; Saitoh, Yuji; Fujimori, Atsushi; Yamagami, Hiroshi; Haga, Yoshinori; Yamamoto, Etsuji; Ōnuki, Yoshichika

    2017-09-01

    The electronic structures of U X3 (X =Al , Ga , and In ) were studied by photoelectron spectroscopy to understand the relationship between their electronic structures and magnetic properties. The band structures and Fermi surfaces of UAl3 and UGa3 were revealed experimentally by angle-resolved photoelectron spectroscopy (ARPES), and they were compared with the result of band-structure calculations. The topologies of the Fermi surfaces and the band structures of UAl3 and UGa3 were explained reasonably well by the calculation, although bands near the Fermi level (EF) were renormalized owing to the finite electron correlation effect. The topologies of the Fermi surfaces of UAl3 and UGa3 are very similar to each other, except for some minor differences. Such minor differences in their Fermi surface or electron correlation effect might take an essential role in their different magnetic properties. No significant changes were observed between the ARPES spectra of UGa3 in the paramagnetic and antiferromagnetic phases, suggesting that UGa3 is an itinerant weak antiferromagnet. The effect of chemical pressure on the electronic structures of U X3 compounds was also studied by utilizing the smaller lattice constants of UAl3 and UGa3 than that of UIn3. The valence band spectrum of UIn3 is accompanied by a satellitelike structure on the high-binding-energy side. The core-level spectrum of UIn3 is also qualitatively different from those of UAl3 and UGa3. These findings suggest that the U 5 f states in UIn3 are more localized than those in UAl3 and UGa3.

  16. Bi2MoxW1-xO6 solid solutions with tunable band structure and enhanced visible-light photocatalytic activities

    NASA Astrophysics Data System (ADS)

    Li, Wenqi; Ding, Xingeng; Wu, Huating; Yang, Hui

    2018-07-01

    Semiconductor photocatalysis is an effective green way to combat water pollution. For the first time, this study reports a novel method to develop Bi2MoxW1-xO6 solid solution with microsphere structure through anion-exchange method. All Bi2MoxW1-xO6 samples exhibit an Aurivillius-type crystal structure without any secondary phase, confirming that in complete solid solutions as the value of x increases, the band gap energy of Bi2MoxW1-xO6 solid solutions decreases, while the optical absorption edge moves to longer wavelength. The Raman spectra research shows an increase in orthorhombic distortion with progressive replacement of W sites in Bi2WO6 with Mo6+ ions. Compared to Bi2MoO6 and Bi2WO6 samples, Bi2Mo0.4W0.6O6 sample displayed best photocatalytic activity and cycling stability for degradation of RhB dye. The enhanced photocatalytic activity of Bi2Mo0.4W0.6O6 sample can be synergetically linked to hierarchical hollow structure, enhanced light absorbance, and high carrier-separation efficiency. Additionally, the hollow Bi2MoxW1-xO6 microspheres formation can be attributed to the Kirkendall effect.

  17. The optical, ultraviolet, and X-ray structure of the quasar HE 0435–1223

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Blackburne, Jeffrey A.; Kochanek, Christopher S.; Chen, Bin

    2014-07-10

    Microlensing has proved an effective probe of the structure of the innermost regions of quasars and an important test of accretion disk models. We present light curves of the lensed quasar HE 0435–1223 in the R band and in the ultraviolet (UV), and consider them together with X-ray light curves in two energy bands that are presented in a companion paper. Using a Bayesian Monte Carlo method, we constrain the size of the accretion disk in the rest-frame near- and far-UV, and constrain for the first time the size of the X-ray emission regions in two X-ray energy bands. Themore » R-band scale size of the accretion disk is about 10{sup 15.23} cm (∼23r{sub g}), slightly smaller than previous estimates, but larger than would be predicted from the quasar flux. In the UV, the source size is weakly constrained, with a strong prior dependence. The UV to R-band size ratio is consistent with the thin disk model prediction, with large error bars. In soft and hard X-rays, the source size is smaller than ∼10{sup 14.8} cm (∼10r{sub g} ) at 95% confidence. We do not find evidence of structure in the X-ray emission region, as the most likely value for the ratio of the hard X-ray size to the soft X-ray size is unity. Finally, we find that the most likely value for the mean mass of stars in the lens galaxy is ∼0.3 M{sub ☉}, consistent with other studies.« less

  18. Short-arc orbit determination using coherent X-band ranging data

    NASA Technical Reports Server (NTRS)

    Thurman, S. W.; Mcelrath, T. P.; Pollmeier, V. M.

    1992-01-01

    The use of X-band frequencies in ground-spacecraft and spacecraft-ground telecommunication links for current and future robotic interplanetary missions makes it possible to perform ranging measurements of greater accuracy than previously obtained. It is shown that ranging data of sufficient accuracy, when acquired from multiple stations, can sense the geocentric angular position of a distant spacecraft. The application of high-accuracy S/X-band and X-band ranging to orbit determination with relatively short data arcs is investigated in planetary approach and encounter scenarios. Actual trajectory solutions for the Ulysses spacecraft constructed from S/X-band ranging and Doppler data are presented; error covariance calculations are used to predict the performance of X-band ranging and Doppler data. The Ulysses trajectory solutions indicate that the aim point for the spacecraft's February 1992 Jupiter encounter was predicted to a geocentric accuracy of 0.20 to 0.23/microrad. Explicit modeling of range bias parameters for each station pass is shown to largely remove systematic ground system calibration errors and transmission media effects from the Ulysses range measurements, which would otherwise corrupt the angle finding capabilities of the data. The Ulysses solutions were found to be reasonably consistent with the theoretical results, which suggest that angular accuracies of 0.08 to 0.1/microrad are achievable with X-band ranging.

  19. Multifunctional Binary Monolayers Ge xP y: Tunable Band Gap, Ferromagnetism, and Photocatalyst for Water Splitting.

    PubMed

    Li, Pengfei; Zhang, Wei; Li, Dongdong; Liang, Changhao; Zeng, Xiao Cheng

    2018-06-04

    The most stable structures of two-dimensional Ge x P y and Ge x As y monolayers with different stoichiometries (e.g., GeP, GeP 2 , and GeP 3 ) are explored systematically through the combination of the particle-swarm optimization technique and density functional theory optimization. For GeP 3 , we show that the newly predicted most stable C2/ m structure is 0.16 eV/atom lower in energy than the state-of-the-art P3̅m1 structure reported previously ( Nano Lett. 2017, 17, 1833). The computed electronic band structures suggest that all the stable and metastable monolayers of Ge x P y are semiconductors with highly tunable band gaps under the biaxial strain, allowing strain engineering of their band gaps within nearly the whole visible-light range. More interestingly, the hole doping can convert the C2/ m GeP 3 monolayer from nonmagnetic to ferromagnetic because of its unique valence band structure. For the GeP 2 monolayer, the predicted most stable Pmc2 1 structure is a (quasi) direct-gap semiconductor that possesses a high electron mobility of ∼800 cm 2 V -1 s -1 along the k a direction, which is much higher than that of MoS 2 (∼200 cm 2 V -1 s -1 ). More importantly, the Pmc2 1 GeP 2 monolayer not only can serve as an n-type channel material in field-effect transistors but also can be an effective catalyst for splitting water.

  20. A doubly curved reflector X-band antenna with integrated IFF array

    NASA Astrophysics Data System (ADS)

    Alia, F.; Barbati, S.

    Primary radar antennas and Identification Friend or Foe (IFF) antennas must rotate with the same speed and synchronism, so that the target echo and IFF transponder mark will appear to the operator at the same time and at the same angular direction. A doubly-curved reflector antenna with a six-element microstrip array integrated in the reflector surface is presented to meet this requirement. The main antenna operates at X-band for low angle search radar, while the secondary antenna operates at L-band for IFF functions. The new configuration minimizes masking of the X-band radiated energy as a result of the IFF L-band elements. In fact, the only effect of the microstrip array on the X-band radiation pattern is the presence of several sidelobes in the + or - 90 deg angular region. The proposed new solution is compared to three other L-band/X-band integrated antenna configurations, and is found to be more advantageous with respect to masking, mechanical aspects, and production costs.

  1. Deep-Ultraviolet Luminescence of Rocksalt-Structured Mg x Zn1-x O (x > 0.5) Films on MgO Substrates

    NASA Astrophysics Data System (ADS)

    Kaneko, Kentaro; Tsumura, Keiichi; Ishii, Kyohei; Onuma, Takayoshi; Honda, Tohru; Fujita, Shizuo

    2018-04-01

    Rocksalt-structured Mg x Zn1-x O films with Mg composition x of 0.47, 0.57, and 0.64 were grown on (100)-oriented MgO substrates using mist chemical vapor deposition. Cathodoluminescence measurements showed deep ultraviolet (DUV) emission peaking at 4.88 eV (254 nm), 5.15 eV (241 nm), and 5.21 eV (238 nm), respectively, at 12 K. The peak energies were lower than the band gap energies by ca. 1 eV, suggesting that the deep ultraviolet (DUV) emission may be recognized as near band edge luminescence but is associated with impurities, defects, or band fluctuations. The use of carbon-free precursors in the growth is suggested to eliminate carbon impurities and to improve the optical properties of Mg x Zn1-x O.

  2. Band Structure Engineering by Substitutional Doping in Solid-State Solutions of [5-Me-PLY(O,O)]2B(1-x)Be(x) Radical Crystals.

    PubMed

    Bag, Pradip; Itkis, Mikhail E; Stekovic, Dejan; Pal, Sushanta K; Tham, Fook S; Haddon, Robert C

    2015-08-12

    We report the substitutional doping of solid-state spiro-bis(5-methyl-1,9-oxido-phenalenyl)boron radical ([2]2B) by co-crystallization of this radical with the corresponding spiro-bis(5-methyl-1,9-oxido-phenalenyl)beryllium compound ([2]2Be). The pure compounds crystallize in different space groups ([2]2B, P1̅, Z = 2; [2]2Be, P2₁/c, Z = 4) with distinct packing arrangements, yet we are able to isolate crystals of composition [2]2B(1-x)Be(x), where x = 0-0.59. The phase transition from the P1̅ to the P2₁/c space group occurs at x = 0.1, but the conductivities of the solid solutions are enhanced and the activation energies reduced for values of x = 0-0.25. The molecular packing is driven by the relative concentration of the spin-bearing ([2]2B) and spin-free ([2]2Be) molecules in the crystals, and the extended Hückel theory band structures show that the progressive incorporation of spin-free [2]2Be in the lattice of the [2]2B radical (overall bandwidth, W = 1.4 eV, in the pure compound) leads to very strong narrowing of the bandwidth, which reaches a minimum at [2]2Be (W = 0.3 eV). The results provide a graphic picture of the structural transformations undergone by the lattice, and at certain compositions we are able to identify distinct structures for the [2]2B and [2]2Be molecules in a single crystalline phase.

  3. Synthesis and enhanced electrochemical catalytic performance of monolayer WS2(1-x) Se2x with a tunable band gap.

    PubMed

    Fu, Qi; Yang, Lei; Wang, Wenhui; Han, Ali; Huang, Jian; Du, Pingwu; Fan, Zhiyong; Zhang, Jingyu; Xiang, Bin

    2015-08-26

    The first realization of a tunable band-gap in monolayer WS2(1-x) Se2x is demonstrated. The tuning of the bandgap exhibits a strong dependence of S and Se content, as proven by PL spectroscopy. Because of its remarkable electronic structure, monolayer WS2(1-x) Se2x exhibits novel electrochemical catalytic activity and offers long-term electrocatalytic stability for the hydrogen evolution reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. First principles calculations of electronic structure and magnetic properties of Cr-based magnetic semiconductors Al{sub 1-x}Cr{sub x}X (X=N, P, As, Sb)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Saeed, Y., E-mail: yasir_saeed54321@yahoo.co; Shaukat, A., E-mail: schaukat@gmail.co; Nazir, S., E-mail: nazirsafdar@gmail.co

    2010-01-15

    First principles calculations based on the density functional theory (DFT) within the local spin density approximation are performed to investigate the electronic structure and magnetic properties of Cr-based zinc blende diluted magnetic semiconductors Al{sub 1-x}Cr{sub x}X (X=N, P, As, Sb) for 0<=x<=0.50.The behaviour of magnetic moment of Al{sub 1-x}Cr{sub x}X at each Cr site as well as the change in the band gap value due to spin down electrons has been studied by increasing the concentration of Cr atom and through changing X from N to Sb. Furthermore, the role of p-d hybridization is analyzed in the electronic band structuremore » and exchange splitting of d-dominated bands. The interaction strength is stronger in Al{sub 1-x}Cr{sub x}N and becomes weaker in Al{sub 1-x}Cr{sub x}Sb. The band gap due to the spin down electrons decreases with the increased concentration of Cr in Al{sub 1-x}Cr{sub x}X, and as one moves down along the isoelectronic series in the group V from N to Sb. Our calculations also verify the half-metallic ferromagnetic character in Cr doped AlX. - Graphical abstract: The prototype structures of Cr doped AlX (X=N, P, As, Sb) compounds: (A) zinc blende AlP for x=0, (B) Cr{sub 1}Al{sub 7}P{sub 8} for x=0.125, (C) Cr{sub 1}Al{sub 3}P{sub 4} for x=0.25, (D) Cr{sub 1}Al{sub 1}P{sub 2} for x=0.5.« less

  5. Chemical trends of the luminescence in wide band gap II 1-xMn xVI semimagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Benecke, C.; Busse, W.; Gumlich, H.-E.

    1990-04-01

    Time resolved emission and excitation spectroscopy is used to investigate the Mn correlated luminescence in wide band gap II-VI compounds, i.e. Zn 1-xMn xS, Cd 1-xMn xSe, Zn 1-xMn xTe and Cd 1-xMn xTe. Additional Information has been obtained with CdxZnyMnzTe( x+ y+ z=1) in checking the luminescence by variation of the ratio of the cations Cd and Zn. Generally speaking, at least two distinct emissions bands can be observed for each II 1- xMn xVI compound. One emissions band is attributed to the internal transition 4T 1(G)→ 6A 1(S) of the 3d 5 electron of the Mn 2+ on regular metal sites with energies of about ≈2 eV. The other emission band is found to occur in the near infrared range of about ≈1.3 eV. This emission band is tentatively interpreted as a transition of Mn 2+ ions on interstitial sites or in small Mn chalcogenide clusters, both interpretations assuming cubic symmetry. This model is supported by the existence of low energy excitation bands and by the great similarity of the shape of the two emission bands which lead to comparable Huang-Rhys factors and effective phonon energies. Also the established trend in the experimental data of the II-VI compounds under consideration confirm this interpretation. For both the IR and the yellow Mn 2+ center, the Racah parameters B and C and the crystal field parameter Dq are determined on the basis of experimental data. As a result, the energy of both the emission and the excitation bands is predominantly determined by the sorrounding anions. These bands shift to higher energies when the anions are changed in the fixed order: Te→Se→S. Regularly, there is also a spectral shift when Zn is replaced by Cd, which is smaller than the shift due to the variation of onions.

  6. Effect of p–d hybridization, structural distortion and cation electronegativity on electronic properties of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mishra, S.; Ganguli, B., E-mail: biplabg@nitrkl.ac.in

    2013-04-15

    Significant effects of p–d hybridization, structural distortion and cation-electro-negativity are found on band gap in ZnSnX{sub 2} (X=P, As, Sb). Our study suggests these compounds to be direct band gap semiconductors with band gaps of 1.23, 0.68 and 0.19 eV respectively. Lattice constants, tetragonal distortion (η), anion displacement, bond lengths and bulk moduli are calculated by Density Functional Theory based on Tight binding Linear Muffin-Tin orbital method. Our result of structural properties is in good agreement with the available experimental and other theoretical results. Calculated band gaps also agree well with the experimental works within LDA limitation. Unlike other semiconductorsmore » in the group II–IV–V{sub 2}, there is a reduction in the band gap of 0.22, 0.20 and 0.24 eV respectively in ZnSnX{sub 2} (X=P, As, Sb) due to p–d hybridization. Structural distortion decreases band gap by 0.20, 0.12 and 0.10 eV respectively. We find that cation electronegativity effect is responsible for increasing the band gap relative to their binary analogs GaInP{sub 2}, InGaAs{sub 2} and GaInSb{sub 2} respectively and increment are 0.13, 0.04 and 0.13 eV respectively. - Graphical abstract: One unit cell of ZnSnX{sub 2} (X=P, As, Sb) chalcopyrite semiconductor. Semiconductors ZnSnX{sub 2} (X=P, As, Sb) are found to be direct band gap semiconductors with band gaps 1.23, 0.68 and 0.19 eV respectively. The quantitative estimate of effects of p–d hybridization, structural distortion and cation electronegativity shows band gaps change significantly due to these effects. Highlights: ► ZnSnX{sub 2} (X=P, As, Sb) are direct band gap semiconductors. ► These have band gaps of 1.23 eV, 0.68 eV and 0.19 eV respectively. ► The band gap reduction due to p–d hybridization is 13.41%, 18.51% and 40% respectively. ► Band gap reduction due to structural distortion is 12.12%, 11.11% and 16.66% respectively. ► Band gap increases 8.38%, 3.70% and 21

  7. (abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

    NASA Technical Reports Server (NTRS)

    Pike, W. T.; George, T.; Khan, M. A.; Kuznia, J. N.

    1994-01-01

    The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

  8. Energy dependence of the band-limited noise in black hole X-ray binaries★

    NASA Astrophysics Data System (ADS)

    Stiele, H.; Yu, W.

    2015-10-01

    Black hole low-mass X-ray binaries show a variety of variability features, which manifest as narrow peak-like structures superposed on broad noise components in power density spectra in the hard X-ray emission. In this work, we study variability properties of the band-limited noise component during the low-hard state for a sample of black hole X-ray binaries. We investigate the characteristic frequency and amplitude of the band-limited noise component and study covariance spectra. For observations that show a noise component with a characteristic frequency above 1 Hz in the hard energy band (4-8 keV), we found this very same component at a lower frequency in the soft band (1-2 keV). This difference in characteristic frequency is an indication that while both the soft and the hard band photons contribute to the same band-limited noise component, which likely represents the modulation of the mass accretion rate, the origin of the soft photons is actually further away from the black hole than the hard photons. Thus, the soft photons are characterized by larger radii, lower frequencies and softer energies, and are probably associated with a smaller optical depth for Comptonization up-scattering from the outer layer of the corona, or suggest a temperature gradient of the corona. We interpret this energy dependence within the picture of energy-dependent power density states as a hint that the contribution of the up-scattered photons originating in the outskirts of the Comptonizing corona to the overall emission in the soft band is becoming significant.

  9. Effect of Nb Content on Mechanical Behavior and Structural Properties of W/(Zr55Cu30Al10Ni5)100- x Nb x Composite

    NASA Astrophysics Data System (ADS)

    Mahmoodan, Morteza; Gholamipour, Reza; Mirdamadi, Shamseddin; Nategh, Said

    2017-05-01

    In the present study, (Zr55Cu30Al10Ni5)100- x Nb( x=0,1,2,3) bulk metallic glass matrix/tungsten wire composites were fabricated by infiltration process. Structural studies were investigated by scanning electron microscopy and X-ray diffraction method. Also, mechanical behaviors of the materials were analyzed using quasi-static compressive tests. Results indicated that the best mechanical properties i.e., 2105 MPa compressive ultimate strength and 28 pct plastic strain before failure, were achieved in the composite sample with X = 2. It was also found that adding Nb to the matrix modified interface structure in W fiber/(Zr55Cu30Al10Ni5)98Nb2 since the stable diffusion band formation acts as a functionally graded layer. Finally, the observation of multiple shear bands formation in the matrix could confirm the excellent plastic deformation behavior of the composite.

  10. Hybrid density functional study of band alignment in ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures.

    PubMed

    Wang, Zhenhai; Zhao, Mingwen; Wang, Xiaopeng; Xi, Yan; He, Xiujie; Liu, Xiangdong; Yan, Shishen

    2012-12-05

    The band alignment in ZnO-GaN and related heterostructures is crucial for uses in solar harvesting technology. Here, we report our density functional calculations of the band alignment and optical properties of ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures using a Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. We found that the conventional GGA functionals underestimate not only the band gap but also the band offset of these heterostructures. Using the hybrid functional calculations, we show that the (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution has a direct band gap of about 2.608 eV, in good agreement with the experimental data. More importantly, this solid solution forms type-II band alignment with the host materials. A GaN-(Ga(1-x)Zn(x))(N(1-x)O(x))-ZnO core-shell solar cell model is presented to improve the visible light absorption ability and carrier collection efficiency.

  11. X-33 Integrated Test Facility Extended Range Simulation

    NASA Technical Reports Server (NTRS)

    Sharma, Ashley

    1998-01-01

    In support of the X-33 single-stage-to-orbit program, NASA Dryden Flight Research Center was selected to provide continuous range communications of the X-33 vehicle from launch at Edwards Air Force Base, California, through landing at Malmstrom Air Force Base Montana, or at Michael Army Air Field, Utah. An extensive real-time range simulation capability is being developed to ensure successful communications with the autonomous X-33 vehicle. This paper provides an overview of various levels of simulation, integration, and test being developed to support the X-33 extended range subsystems. These subsystems include the flight termination system, L-band command uplink subsystem, and S-band telemetry downlink subsystem.

  12. Electronic structure modifications and band gap narrowing in Zn0.95V0.05O

    NASA Astrophysics Data System (ADS)

    Ahad, Abdul; Majid, S. S.; Rahman, F.; Shukla, D. K.; Phase, D. M.

    2018-04-01

    We present here, structural, optical and electronic structure studies on Zn0.95V0.05O, synthesized using solid state method. Rietveld refinement of x-ray diffraction pattern indicates no considerable change in the lattice of doped ZnO. The band gap of doped sample, as calculated by Kubelka-Munk transformed reflectance spectra, has been found reduced compared to pure ZnO. Considerable changes in absorbance in UV-Vis range is observed in doped sample. V doping induced decrease in band gap is supported by x-ray absorption spectroscopy measurements. It is experimentally confirmed that conduction band edge in Zn0.95V0.05O has shifted towards Fermi level than in pure ZnO.

  13. X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B.

    1997-04-01

    X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

  14. DFT study of structural and electronic properties of MoS2(1-x)Se2x alloy (x = 0.25)

    NASA Astrophysics Data System (ADS)

    Gusakova, Julia; Gusakov, Vasilii; Tay, Beng Kang

    2018-04-01

    First-principles calculations have been performed to study the structural features of the monolayer MoS2(1-x)Se2x (x = 0.25) alloy and its electronic properties. We studied the effects of the relative positions of Se atoms in a real monolayer alloy. It was demonstrated that the distribution of the Se atoms between the top and bottom chalcogen planes was most energetically favorable. For a more probable distribution of Se atoms, a MoS2(1-x)Se2x (x = 0.25) monolayer alloy is a direct semiconductor with a fundamental band gap equal to 2.35 eV (calculated with the GVJ-2e method). We also evaluated the optical band gap of the alloy at 77 K (1.86 eV) and at room temperature (1.80 eV), which was in good agreement with the experimentally measured band gap of 1.79 eV.

  15. Outstanding problems in the band structures of 152Sm

    NASA Astrophysics Data System (ADS)

    Gupta, J. B.; Hamilton, J. H.

    2017-09-01

    The recent data on B (E 2 ) values, deduced from the multi-Coulex excitation of the low spin states in the decay of 152Sm, and other experimental findings in the last two decades are compared with the predictions from the microscopic dynamic pairing plus quadrupole model of Kumar and Baranger. The 1292.8 keV 2+ state is assigned to the 03 + band, and the K =2 assignment of the 1769 keV 2+ state is confirmed. The anomaly of the shape coexistence of the assumed spherical β band versus the deformed ground band is resolved. The values from the critical point symmetry X(5) support the collective character of the β band. The problem with the two-term interacting boson model Hamiltonian in predicting β and γ bands in 152Sm leads to interesting consequences. The collective features of the second excited Kπ=03 + band are preferred over the "pairing isomer" view. Also the multiphonon nature of the higher lying Kπ=22 +β γ band and Kπ=4+ band are illustrated vis-à-vis the new data and the nuclear structure theory.

  16. Electronic structure of antifluorite Cu2X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U.

    PubMed

    Zhang, Yubo; Wang, Youwei; Xi, Lili; Qiu, Ruihao; Shi, Xun; Zhang, Peihong; Zhang, Wenqing

    2014-02-21

    The traditional photon absorbers Cu2-xX (X = S, Se, and Te) have regained significant research attention in the search of earth-abundant photovoltaic materials. These moderate- and narrow-gap materials have also been shown to exhibit excellent thermoelectric properties recently. However, semimetallic band structures with inverted band orderings are predicted for antifluorite structure Cu2X using density functional theory with the local density approximation or the generalized gradient approximation. We find that semiconducting band structures and normal band orderings can be obtained using the modified Becke-Johnson potential plus an on-site Coulomb U (the mBJ+U approach), which is consistent with our earlier finding for diamond-like Cu-based multinary semiconductors [Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, and W. Zhang, J. Chem. Phys. 139, 184706 (2013)]. The trend of the chemical bonding of Cu2X is analyzed, which shows that the positions of the valence band maximum and conduction band minimum are strongly affected by the inter-site pd and intra-site sp hybridizations, respectively. The calculated gaps of Cu2S and Cu2Se still seem to be underestimated compared with experimental results. We also discuss the effects of different structural phases and Cu disordering and deficiency on the bandgaps of these materials.

  17. Structural studies and band gap tuning of Cr doped ZnO nanoparticles

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Srinet, Gunjan, E-mail: gunjansrinet@gmail.com; Kumar, Ravindra, E-mail: gunjansrinet@gmail.com; Sajal, Vivek, E-mail: gunjansrinet@gmail.com

    2014-04-24

    Structural and optical properties of Cr doped ZnO nanoparticles prepared by the thermal decomposition method are presented. X-ray diffraction studies confirmed the substitution of Cr on Zn sites without changing the wurtzite structure of ZnO. Modified form of W-H equations was used to calculate various physical parameters and their variation with Cr doping is discussed. Significant red shift was observed in band gap, i.e., a band gap tuning is achieved by Cr doping which could eventually be useful for optoelectronic applications.

  18. Fermi arc electronic structure and Chern numbers in the type-II Weyl semimetal candidate Mo x W 1 - x Te 2

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Belopolski, Ilya; Xu, Su-Yang; Ishida, Yukiaki

    2016-08-15

    It has recently been proposed that electronic band structures in crystals can give rise to a previously overlooked type of Weyl fermion, which violates Lorentz invariance and, consequently, is forbidden in particle physics. It was further predicted that Mo x W 1 - x Te 2 may realize such a type-II Weyl fermion. Here, we first show theoretically that it is crucial to access the band structure above the Fermi level ε F to show a Weyl semimetal in Mo x W 1 - x Te 2 . Then, we study Mo x W 1 - x Te 2 bymore » pump-probe ARPES and we directly access the band structure > 0.2 eV above ε F in experiment. By comparing our results with ab initio calculations, we conclude that we directly observe the surface state containing the topological Fermi arc. We propose that a future study of Mo x W 1 - x Te 2 by pump-probe ARPES may directly pinpoint the Fermi arc. Our work sets the stage for the experimental discovery of the first type-II Weyl semimetal in Mo x W 1 - x Te 2 .« less

  19. An unsupervised two-stage clustering approach for forest structure classification based on X-band InSAR data - A case study in complex temperate forest stands

    NASA Astrophysics Data System (ADS)

    Abdullahi, Sahra; Schardt, Mathias; Pretzsch, Hans

    2017-05-01

    Forest structure at stand level plays a key role for sustainable forest management, since the biodiversity, productivity, growth and stability of the forest can be positively influenced by managing its structural diversity. In contrast to field-based measurements, remote sensing techniques offer a cost-efficient opportunity to collect area-wide information about forest stand structure with high spatial and temporal resolution. Especially Interferometric Synthetic Aperture Radar (InSAR), which facilitates worldwide acquisition of 3d information independent from weather conditions and illumination, is convenient to capture forest stand structure. This study purposes an unsupervised two-stage clustering approach for forest structure classification based on height information derived from interferometric X-band SAR data which was performed in complex temperate forest stands of Traunstein forest (South Germany). In particular, a four dimensional input data set composed of first-order height statistics was non-linearly projected on a two-dimensional Self-Organizing Map, spatially ordered according to similarity (based on the Euclidean distance) in the first stage and classified using the k-means algorithm in the second stage. The study demonstrated that X-band InSAR data exhibits considerable capabilities for forest structure classification. Moreover, the unsupervised classification approach achieved meaningful and reasonable results by means of comparison to aerial imagery and LiDAR data.

  20. Design and application of multimegawatt X -band deflectors for femtosecond electron beam diagnostics

    DOE PAGES

    Dolgashev, Valery A.; Bowden, Gordon; Ding, Yuantao; ...

    2014-10-02

    Performance of the x-ray free electron laser Linac Coherent Light Source (LCLS) and the Facility for Advanced Accelerator Experimental Tests (FACET) is determined by the properties of their extremely short electron bunches. Multi-GeV electron bunches in both LCLS and FACET are less than 100 fs long. Optimization of beam properties and understanding of free-electron laser operation require electron beam diagnostics with time resolution of about 10 fs. We designed, built and commissioned a set of high frequency X-band deflectors which can measure the beam longitudinal space charge distribution and slice energy spread to better than 10 fs resolution at fullmore » LCLS energy (14 GeV), and with 70 fs resolution at full FACET energy (20 GeV). Use of high frequency and high gradient in these devices allows them to reach unprecedented performance. We report on the physics motivation, design considerations, operational configuration, cold tests, and typical results of the X-band deflector systems currently in use at SLAC.« less

  1. Evaluation of the JPL X-band 32 element active array. [for deep space communication

    NASA Technical Reports Server (NTRS)

    Boreham, J. F.; Postal, R. B.; Conroy, B. L.

    1979-01-01

    Tests performed on an X-band 32-element active array are described. Antenna pattern characteristics of the array were tested in its standard operating mode as well as several degraded performance modes, including failures of 1, 2, 3, 4, 8, 16, and 31 elements. Additionally, the array was characterized with the addition of a metallic shroud, and also characterized versus rf drive level and at a single off-axis electronic beamsteered position. Characterization was performed on several of the 3/4-watt, three-stage, X-band solid-state power amplifier modules. The characterization included swept amplitude response, amplitude and phase versus temperature from -20 to +60 C, and intermodulation distortion of selected modules. The array is described and conclusions and recommendations based upon the experience and results achieved are included.

  2. Design, fabrication, and high-gradient testing of an X -band, traveling-wave accelerating structure milled from copper halves

    NASA Astrophysics Data System (ADS)

    Argyropoulos, Theodoros; Catalan-Lasheras, Nuria; Grudiev, Alexej; Mcmonagle, Gerard; Rodriguez-Castro, Enrique; Syrachev, Igor; Wegner, Rolf; Woolley, Ben; Wuensch, Walter; Zha, Hao; Dolgashev, Valery; Bowden, Gorden; Haase, Andrew; Lucas, Thomas Geoffrey; Volpi, Matteo; Esperante-Pereira, Daniel; Rajamäki, Robin

    2018-06-01

    A prototype 11.994 GHz, traveling-wave accelerating structure for the Compact Linear Collider has been built, using the novel technique of assembling the structure from milled halves. The use of milled halves has many advantages when compared to a structure made from individual disks. These include the potential for a reduction in cost, because there are fewer parts, as well as a greater freedom in choice of joining technology because there are no rf currents across the halves' joint. Here we present the rf design and fabrication of the prototype structure, followed by the results of the high-power test and post-test surface analysis. During high-power testing the structure reached an unloaded gradient of 100 MV /m at a rf breakdown rate of less than 1.5 ×10-5 breakdowns /pulse /m with a 200 ns pulse. This structure has been designed for the CLIC testing program but construction from halves can be advantageous in a wide variety of applications.

  3. Solid-State Powered X-band Accelerator

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Othman, Mohamed A.K.; Nann, Emilio A.; Dolgashev, Valery A.

    2017-03-06

    In this report we disseminate the hot test results of an X-band 100-W solid state amplifier chain for linear accelerator (linac) applications. Solid state power amplifiers have become increasingly attractive solutions for achieving high power in radar and maritime applications. Here the performance of solid state amplifiers when driving an RF cavity is investigated. Commercially available, matched and fully-packaged GaN on SiC HEMTs are utilized, comprising a wideband driver stage and two power stages. The amplifier chain has a high poweradded- efficiency and is able to supply up to ~1.2 MV/m field gradient at 9.2 GHz in a simple testmore » cavity, with a peak power exceeding 100 W. These findings set forth the enabling technology for solid-state powered linacs.« less

  4. W-Band Transmission MeasurementS and X-Band Dielectric Properties Measurements for a Radome Material Sample

    NASA Technical Reports Server (NTRS)

    Cravey, Robin L.; Tiemsin, Pacita I.

    1997-01-01

    This paper describes measurements which were performed on a sample of radome material in the Electromagnetic Properties Measurements Laboratory (EPML). The purpose of the measurements described in this paper was to determine the one-way transmission loss through the flat panel of radome material for a frequency range of 84 to 94 GHz, for varying incidence angles. The panel, which was manufactured by Norton Performance Plastics Corporation, was provided to the EPML by TRW. The size of the panel is 40 in x 36 in x 0.422 in and consists of a foam material with one side coated with a smooth white coating (this side will be referred to as the front side). The dielectric properties of the foam material from the inside of the panel were also determined at X-band (8.2-12.4 GHz). The W-band free space measurements are presented first, followed by the X-band dielectric properties measurements.

  5. Electronic structure of antifluorite Cu{sub 2}X (X = S, Se, Te) within the modified Becke-Johnson potential plus an on-site Coulomb U

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Yubo; Wang, Youwei; Xi, Lili

    The traditional photon absorbers Cu{sub 2−x}X (X = S, Se, and Te) have regained significant research attention in the search of earth-abundant photovoltaic materials. These moderate- and narrow-gap materials have also been shown to exhibit excellent thermoelectric properties recently. However, semimetallic band structures with inverted band orderings are predicted for antifluorite structure Cu{sub 2}X using density functional theory with the local density approximation or the generalized gradient approximation. We find that semiconducting band structures and normal band orderings can be obtained using the modified Becke-Johnson potential plus an on-site Coulomb U (the mBJ+U approach), which is consistent with our earliermore » finding for diamond-like Cu-based multinary semiconductors [Y. Zhang, J. Zhang, W. Gao, T. A. Abtew, Y. Wang, P. Zhang, and W. Zhang, J. Chem. Phys. 139, 184706 (2013)]. The trend of the chemical bonding of Cu{sub 2}X is analyzed, which shows that the positions of the valence band maximum and conduction band minimum are strongly affected by the inter-site pd and intra-site sp hybridizations, respectively. The calculated gaps of Cu{sub 2}S and Cu{sub 2}Se still seem to be underestimated compared with experimental results. We also discuss the effects of different structural phases and Cu disordering and deficiency on the bandgaps of these materials.« less

  6. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb 1-xSn xTe

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan

    2015-12-09

    The electronic structure of Pb 1–xSn xTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb 1–xSn xTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap canmore » be tuned by the alloy composition. In conclusion, there is a range of potential usage of Pb 1–xSn xTe for spintronic applications.« less

  7. AB INITIO STUDY OF STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF MgxCd1-xX (X = S, Se, Te) ALLOYS

    NASA Astrophysics Data System (ADS)

    Noor, N. A.; Shaukat, A.

    2012-12-01

    This study describes structural, electronic and optical properties of MgxCd1-xX (X = S, Se, Te) alloys in the complete range 0≤x ≤1 of composition x in the zinc-blende (ZB) phase with the help of full-potential linearized augmented plane wave plus local orbitals (FP-LAPW+lo) method within density functional theory (DFT). In order to calculate total energy, generalized gradient approximation (Wu-Cohen GGA) has been applied, which is based on optimization energy. For electronic structure calculations, the corresponding potential is being optimized by Engel-Vosko GGA formalism. Our calculations reveal the nonlinear variation of lattice constant and bulk modulus with different concentration for the end binary and their ternary alloys, which slightly deviates from Vegard's law. The calculated band structures show a direct band gap for all three alloys with increasing order in the complete range of the compositional parameter x. In addition, we have discussed the disorder parameter (gap bowing) and concluded that the total band gap bowing is substantially influenced by the chemical (electronegativity) contribution. The calculated density of states (DOS) of these alloys is discussed in terms of contribution from various s-, p- and d-states of the constituent atoms and charge density distributions plots are analyzed. Optical properties have been presented in the form of the complex dielectric function ɛ(ω), refractive index n(ω) and extinction coefficient k(ω) as function of the incident photon energy, and the results have been compared with existing experimental data and other theoretical calculations.

  8. Pressure dependence of band-gap and phase transitions in bulk CuX (X = Cl, Br, I)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Azhikodan, Dilna; Nautiyal, Tashi; Sharma, S.

    2016-05-06

    Usually a phase transition, in theoretical studies, is explored or verified by studying the total energy as a function of the volume considering various plausible phases. The intersection point, if any, of the free energy vs. volume curves for the different phases is then the indicator of the phase transition(s). The question is, can the theoretical study of a single phase alone indicate a phase transition? i.e. can we look beyond the phase under consideration through such a study? Using density-functional theory, we report a novel approach to suggest phase transition(s) through theoretical study of a single phase. Copper halidesmore » have been engaged for this study. These are direct band-gap semiconductors, with zinc blende structure at ambient conditions, and are reported to exhibit many phase transitions. We show that the study of volume dependence of energy band-gap in a single phase facilitates looking beyond the phase under consideration. This, when translated to pressures, reflects the phase transition pressures for CuX (X = Cl, Br, I) with an encouraging accuracy. This work thus offers a simple, yet reliable, approach based on electronic structure calculations to investigate new semiconducting materials for phase changes under pressure.« less

  9. Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

    NASA Technical Reports Server (NTRS)

    Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

    1990-01-01

    Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

  10. Band alignment of SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) determined by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Feng, Zhaoqing; Feng, Qian; Zhang, Jincheng; Li, Xiang; Li, Fuguo; Huang, Lu; Chen, Hong-Yan; Lu, Hong-Liang; Hao, Yue

    2018-03-01

    In this work, we report the investigation of the band alignment of SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. The single crystallinity and orientation of β-(AlxGa1-x)2O3 films grown on sapphire by pulsed laser deposition were studied with the high resolution X-ray diffraction. The Ga 2p3/2 and Si 2p core-level spectra as well as valence band spectra were used in the analysis of band alignment. As the mole fraction x of Al increases from 0 to 0.49, the bandgap and conduction band offset values of SiO2/(AlxGa1-x)2O3 increases from 4.9 to 5.6 eV and from 1.5 to 2.1 eV, respectively, while that of valence band offset decreases from 2.2 to 0.9 eV. From the results obtained, the energy band diagram of the studied SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) interfaces is found to be of type I. Energy band lineups of SiO2/(AlxGa1-x)2O3 were thus determined which can be used as for Ga2O3 based power device technology.

  11. Electronic band structure and optical gain of GaN{sub x}Bi{sub y}As{sub 1−x−y}/GaAs pyramidal quantum dots

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Song, Zhi-Gang; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Bose, Sumanta

    The electronic band structure and optical gain of GaN{sub x}Bi{sub y}As{sub 1−x−y}/GaAs pyramidal quantum dots (QDs) are investigated using the 16-band k ⋅ p model with constant strain. The optical gain is calculated taking both homogeneous and inhomogeneous broadenings into consideration. The effective band gap falls as we increase the composition of nitrogen (N) and bismuth (Bi) and with an appropriate choice of composition we can tune the emission wavelength to span within 1.3 μm–1.55 μm, for device application in fiber technology. The extent of this red shift is more profound in QDs compared with bulk material due to quantum confinement. Othermore » factors affecting the emission characteristics include virtual crystal, strain profile, band anticrossing (BAC), and valence band anticrossing (VBAC). The strain profile has a profound impact on the electronic structure, specially the valence band of QDs, which can be determined using the composition distribution of wave functions. All these factors eventually affect the optical gain spectrum. With an increase in QD size, we observe a red shift in the emission energy and emergence of secondary peaks owing to transitions or greater energy compared with the fundamental transition.« less

  12. Optical and structural properties of amorphous Se x Te100- x aligned nanorods

    NASA Astrophysics Data System (ADS)

    Al-Agel, Faisal A.

    2013-12-01

    In the present work, we report studies on optical and structural phenomenon in as-deposited thin films composed of aligned nanorods of amorphous Se x Te100- x ( x = 3, 6, 9, and 12). In structural studies, field emission scanning electron microscopic (FESEM) images suggest that these thin films contain high yield of aligned nanorods. These nanorods show a completely amorphous nature, which is verified by X-ray diffraction patterns of these thin films. Optical studies include the measurement of spectral dependence of absorption, reflection, and transmission of these thin films, respectively. On the basis of optical absorption data, a direct optical band gap is observed. This observation of a direct optical band gap in these nanorods is interesting as chalcogenides normally show an indirect band gap, and due to this reason, these materials could not become very popular for semiconducting devices. Therefore, this is an important report and will open up new directions for the application of these materials in semiconducting devices. The value of this optical band gap is found to decrease with the increase in selenium (Se) concentration. The reflection and absorption data are employed to estimate the values of optical constants (extinction coefficient ( k) and refractive index ( n)). From the spectral dependence of these optical constants, it is found that the values of refractive index ( n) increase, whereas the values of extinction coefficient ( k) decrease with the increase in photon energy. The real and imaginary parts of dielectric constants calculated with the values of extinction coefficient ( k) and refractive index ( n), are found to vary with photon energy and dopant concentration.

  13. Evaluation of band alignment of α-Ga2O3/α-(Al x Ga1‑ x )2O3 heterostructures by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Uchida, Takayuki; Jinno, Riena; Takemoto, Shu; Kaneko, Kentaro; Fujita, Shizuo

    2018-04-01

    The band alignment at an α-Ga2O3/α-(Al x Ga1‑ x )2O3 heterointerface, with different Al compositions (x), grown on a c-plane sapphire substrate was evaluated by X-ray photoelectron spectroscopy. The experimental results show that the heterointerface has the type-I band discontinuity with the valence band offsets of 0.090, 0.12, and 0.14 eV, and the conduction band offsets of 0.34, 0.79, and 1.87 eV, for x values of 0.1, 0.4, and 0.8, respectively. The small band offset for the valence band is attributed to the fact that the valence band of oxides is constituted by the localized O 2p level, which is dominated by the nature of oxygen atoms. The type-I band discontinuity is desirable for a variety of heterostructure devices.

  14. Development of an automatic frequency control system for an X-band (=9300 MHz) RF electron linear accelerator

    NASA Astrophysics Data System (ADS)

    Cha, Sungsu; Kim, Yujong; Lee, Byung Cheol; Park, Hyung Dal; Lee, Seung Hyun; Buaphad, Pikad

    2017-05-01

    KAERI is developing a 6 MeV X-band radio frequency (RF) electron linear accelerator for medical purposes. The proposed X-band accelerator consists of an e-gun, an accelerating structure, two solenoid magnets, two steering magnets, a magnetron, a modulator, and an automatic frequency control (AFC) system. The accelerating structure of the component consists of oxygen-free high-conductivity copper (OFHC). Therefore, the ambient temperature changes the volume, and the resonance frequency of the accelerating structure also changes. If the RF frequency of a 9300 MHz magnetron and the resonance frequency of the accelerating structure do not match, it can degrade the performance. That is, it will decrease the output power, lower the beam current, decrease the X-ray dose rate, increase the reflection power, and result in unstable operation of the accelerator. Accelerator operation should be possible at any time during all four seasons. To prevent humans from being exposed to radiation when it is operated, the accelerator should also be operable through remote monitoring and remote control. Therefore, the AFC system is designed to meet these requirements; it is configured based on the concept of a phase-locked loop (PLL) model, which includes an RF section, an intermediate frequency (IF) [1-3] section, and a local oscillator (LO) section. Some resonance frequency controllers use a DC motor, chain, and potentiometer to store the position and tune the frequency [4,5]. Our AFC system uses a step motor to tune the RF frequency of the magnetron. The maximum tuning turn number of our magnetron frequency tuning shaft is ten. Since the RF frequency of our magnetron is 9300±25 MHz, it gives 5 MHz (∵±25 MHz/10 turns → 50 MHz/10 turns =5 MHz/turn) frequency tuning per turn. The rotation angle of our step motor is 0.72° per step and the total step number per one rotation is 360°/0.72°=500 steps. Therefore, the tuning range per step is 10 kHz/step (=5 MHz per turn/500 steps per

  15. Complex band structure and electronic transmission eigenchannels

    NASA Astrophysics Data System (ADS)

    Jensen, Anders; Strange, Mikkel; Smidstrup, Søren; Stokbro, Kurt; Solomon, Gemma C.; Reuter, Matthew G.

    2017-12-01

    It is natural to characterize materials in transport junctions by their conductance length dependence, β. Theoretical estimations of β are made employing two primary theories: complex band structure and density functional theory (DFT) Landauer transport. It has previously been shown that the β value derived from total Landauer transmission can be related to the β value from the smallest |ki| complex band; however, it is an open question whether there is a deeper relationship between the two. Here we probe the details of the relationship between transmission and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two molecular junctions. The molecular junctions show that both the length dependence of the total transmission and the individual transmission eigenvalues can be, almost always, found through the complex band structure. The complex band structure of the semi-conducting material, however, does not predict the length dependence of the total transmission but only of the individual channels, at some k-points, due to multiple channels contributing to transmission. We also observe instances of vertical bands, some of which are the smallest |ki| complex bands, that do not contribute to transport. By understanding the deeper relationship between complex bands and individual transmission eigenchannels, we can make a general statement about when the previously accepted wisdom linking transmission and complex band structure will fail, namely, when multiple channels contribute significantly to the transmission.

  16. Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure.

    PubMed

    Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia

    2018-03-16

    We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

  17. Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure

    PubMed Central

    Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia

    2018-01-01

    We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently. PMID:29547504

  18. X-ray Binaries and the Galaxy Structure in Hard X-rays

    NASA Astrophysics Data System (ADS)

    Lutovinov, Alexander

    The Galaxy structure in the hard X-ray energy band (¿20 keV) was studied using data of the INTEGRAL observatory. A deep and nearly uniform coverage of the galactic plane allowed to increase significantly the sensitivity of the survey and discover several dozens new galac-tic sources. The follow-up observations with XMM-Newton and CHANDRA observatories in X-rays and ground-based telescopes in optical and infrared wavebands gave us a possibility to determine optical counterparts and distances for number of new and already known faint sources. That, in turn, allowed us to build the spatial distribution of different classes of galactic X-ray binaries and obtain preliminary results of the structure of the further part of the Galaxy.

  19. Creating a Test Validated Structural Dynamic Finite Element Model of the X-56A Aircraft

    NASA Technical Reports Server (NTRS)

    Pak, Chan-Gi; Truong, Samson

    2014-01-01

    Small modeling errors in the finite element model will eventually induce errors in the structural flexibility and mass, thus propagating into unpredictable errors in the unsteady aerodynamics and the control law design. One of the primary objectives of the Multi Utility Technology Test-bed, X-56A aircraft, is the flight demonstration of active flutter suppression, and therefore in this study, the identification of the primary and secondary modes for the structural model tuning based on the flutter analysis of the X-56A aircraft. The ground vibration test-validated structural dynamic finite element model of the X-56A aircraft is created in this study. The structural dynamic finite element model of the X-56A aircraft is improved using a model tuning tool. In this study, two different weight configurations of the X-56A aircraft have been improved in a single optimization run. Frequency and the cross-orthogonality (mode shape) matrix were the primary focus for improvement, while other properties such as center of gravity location, total weight, and offdiagonal terms of the mass orthogonality matrix were used as constraints. The end result was a more improved and desirable structural dynamic finite element model configuration for the X-56A aircraft. Improved frequencies and mode shapes in this study increased average flutter speeds of the X-56A aircraft by 7.6% compared to the baseline model.

  20. Optical characterization of type-I to type-II band alignment transition in GaAs/Al x Ga1-x As quantum rings grown by droplet epitaxy

    NASA Astrophysics Data System (ADS)

    Su, Linlin; Wang, Ying; Guo, Qinglin; Li, Xiaowei; Wang, Shufang; Fu, Guangsheng; Mazur, Yuriy I.; E Ware, Morgan; Salamo, Gregory J.; Liang, Baolai; Huffaker, Diana L.

    2017-08-01

    Optical properties of GaAs/Al x Ga1-x As quantum rings (QRs) grown on GaAs (1 0 0) by droplet epitaxy have been investigated as a function of the Al-composition in the Al x Ga1-x As barrier. A transition from type-I to type-II band alignment is observed for the QRs via photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. While x  ⩽  0.45, the QR PL spectra show a blue-shift and an increasing intensity with increasing Al-composition, revealing the enhancement of quantum confinement in the QRs with type-I band alignment. While x  ⩾  0.60, the characteristic large blue-shift with excitation intensity and the much longer lifetime indicate the realization of a type-II band alignment. Due to the height fluctuation of QR structures grown by droplet epitaxy mode, it is not the large blue-shift of emission energy, but the long lifetime that becomes the more important feature to identify the type-II band alignment.

  1. Two-dimensional wide-band-gap II-V semiconductors with a dilated graphene-like structure

    NASA Astrophysics Data System (ADS)

    Zhang, Xue-Jing; Liu, Bang-Gui

    2016-12-01

    Since the advent of graphene, two-dimensional (2D) materials have become very attractive and there is growing interest in exploring new 2D materials beyond graphene. Here, through density-functional theory (DFT) calculations, we predict 2D wide-band-gap II-V semiconductor materials of M3X2 (M = Zn, Cd and X = N, P, As) with a dilated graphene-like honeycomb structure. In this structure the group-V X atoms form two X-atomic planes symmetrically astride the centering group-IIB M atomic plane. Our DFT calculation shows that 2D Zn3N2, Zn3P2 and Zn3As2 have direct band gaps of 2.87, 3.81 and 3.55 eV, respectively, and 2D Cd3N2, Cd3P2 and Cd3As2 exhibit indirect band gaps of 2.74, 3.51 and 3.29 eV, respectively. Each of the six 2D materials is shown to have effective carrier (either hole or electron) masses down to 0.03m 0-0.05m 0. The structural stability and feasibility of experimental realization of these 2D materials has been shown in terms of DFT phonon spectra and total energy comparison with related existing bulk materials. On the experimental side, there already are many similar two-coordinate structures of Zn and other transition metals in various organic materials. Therefore, these 2D semiconductors can enrich the family of 2D electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices.

  2. The structure and optical properties of Sr{sub 1−x}Ca{sub x}MoO{sub 3}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hopper, H.A.; Macphee, D.E.; Mclaughlin, A.C., E-mail: a.c.mclaughlin@abdn.ac.uk

    2016-10-15

    The solid solution Sr{sub 1−x}Ca{sub x}MoO{sub 3} (x=0.00, 0.05, 0.10, 0.13, 0.15 and 0.17) has successfully been synthesised and X-ray Powder diffraction has revealed the occurrence of structural phase transitions, from cubic Pm−3m to tetragonal I4/mcm, and then to orthorhombic Imma as the value of x increased. Discontinuities were observed in the cell parameters and bond lengths and angles at the transition from tetragonal to orthorhombic symmetry as a result of the switching of the octahedral rotation axis at the tetragonal to orthorhombic transition. The increased octahedral tilting could also be linked to the decrease in the band gap frommore » 2.20 eV to 2.10 eV as x increased from 0 to 0.17. - Graphical abstract: Table of Contents Figure Caption: Ultraviolet-visible absorbance spectra for Sr{sub 1−x}Ca{sub x}MoO{sub 3} showing a reduction in band gap upon increasing x as a result of increased octahedral tilting. - Highlights: • The solid solution Sr{sub 1−x}Ca{sub x}MoO{sub 3} has been synthesised. • Structural phase transitions are observed. • Discontinuities were observed in the cell parameters and bond lengths and angles. • Upon increasing x from 0 to 0.17 the band gap reduces from 2.20 eV to 2.10 eV.« less

  3. Average and local crystal structures of (Ga 1–xZn x)(N 1–xO x) solid solution nanoparticles

    DOE PAGES

    Feygenson, Mikhail; Neuefeind, Joerg C.; Tyson, Trevor A.; ...

    2015-11-06

    We report the comprehensive study of the crystal structure of (Ga 1–xZn x)(N 1–xO x) solid solution nanoparticles by means of neutron and synchrotron x-ray scattering. In our study we used four different types of (Ga 1–xZn x)(N 1–xO x) nanoparticles, with diameters of 10–27 nm and x = 0.075–0.51, which show the narrow energy-band gaps from 2.21 to 2.61 eV. The Rietveld analysis of the neutron diffraction data revealed that the average crystal structure is the hexagonal wurtzite (space group P6 3mc), in agreement with previous reports on similar bulk materials. The pair-distribution function (PDF) analysis of the samemore » data found that the local structure is more disordered than the average one. It is best described by the model with a lower symmetry space group P1, where atoms are quasirandomly distorted from their nominal positions in the hexagonal wurtzite lattice.« less

  4. A new design of an S/X dual band circular slot antenna for radar applications.

    PubMed

    Ghnimi, Said; Wali, Rawia; Gharsallh, Ali; Razban, Tchanguiz

    2013-01-01

    A novel design of dual-band slot antenna with a circular patch for radar applications is presented and studied. It is fed by a micro-strip line and built on a FR-4 substrate with a whole size of 18 x 30 mm2. A dual band printed antenna is created by introducing slots on the radiating element. By this, two bandwidth, covering C and X band, are achieved. In order to obtain a good fundamental antenna design, the initial studies were carried out theoretically, using CST Microwave Studio simulation software. In this case, the frequency range at return loss < 10 dB is 5.24 - 6.16 GHz for low frequency and is 7.9 -11.7 GHz for high frequency. In addition, the proposed antenna has good radiation characteristics and stable gains over the whole operating bands. A prototype of antenna is fabricated and tested. Experimental data show good agreement between simulated and measured results.

  5. Frequency-Selective Surface to Determine Permittivity of Industrial Oil and Effect of Nanoparticle Addition in X-Band

    NASA Astrophysics Data System (ADS)

    Jafari, Fereshteh Sadat; Ahmadi-Shokouh, Javad

    2018-02-01

    A frequency-selective surface (FSS) structure is proposed for characterization of the permittivity of industrial oil using a transmission/reflection (TR) measurement scheme in the X-band. Moreover, a parameter study is presented to distinguish the dielectric constant and loss characteristics of test materials. To model the loss empirically, we used CuO nanoparticles artificially mixed with an industrial oil. In this study, the resonant frequency of the FSS is the basic parameter used to determine the material characteristics, including resonance properties such as the magnitude of transmission ( S 21), bandwidth, and frequency shift. The results reveal that the proposed FSS structure and setup can act well as a sensor for characterization of the dielectric properties of industrial oil.

  6. Mid-frequency Band Dynamics of Large Space Structures

    NASA Technical Reports Server (NTRS)

    Coppolino, Robert N.; Adams, Douglas S.

    2004-01-01

    High and low intensity dynamic environments experienced by a spacecraft during launch and on-orbit operations, respectively, induce structural loads and motions, which are difficult to reliably predict. Structural dynamics in low- and mid-frequency bands are sensitive to component interface uncertainty and non-linearity as evidenced in laboratory testing and flight operations. Analytical tools for prediction of linear system response are not necessarily adequate for reliable prediction of mid-frequency band dynamics and analysis of measured laboratory and flight data. A new MATLAB toolbox, designed to address the key challenges of mid-frequency band dynamics, is introduced in this paper. Finite-element models of major subassemblies are defined following rational frequency-wavelength guidelines. For computational efficiency, these subassemblies are described as linear, component mode models. The complete structural system model is composed of component mode subassemblies and linear or non-linear joint descriptions. Computation and display of structural dynamic responses are accomplished employing well-established, stable numerical methods, modern signal processing procedures and descriptive graphical tools. Parametric sensitivity and Monte-Carlo based system identification tools are used to reconcile models with experimental data and investigate the effects of uncertainties. Models and dynamic responses are exported for employment in applications, such as detailed structural integrity and mechanical-optical-control performance analyses.

  7. V x In (2–x) S 3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition

    DOE PAGES

    McCarthy, Robert F.; Weimer, Matthew S.; Haasch, Richard T.; ...

    2016-03-21

    Substitutional alloys of several thin film semiconductors have been proposed as intermediate band (IB) materials for use in next-generation photovoltaics, which aim to utilize a larger fraction of the solar spectrum without sacrificing significant photovoltage. Here, we demonstrate a novel approach to IB material growth, namely atomic layer deposition (ALD), to enable unique control over substitutional-dopant location and density. Two new ALD processes for vanadium sulfide incorporation are introduced, one of which incorporates a vanadium (III) amidinate previously untested for ALD. We synthesize the first thin film V xIn (2-x)S 3 intermediate band semiconductors, using this process, and further demonstratemore » that the V:In ratio, and therefore intraband gap density of states, can be finely tuned according to the ALD dosing schedule. Deposition on a crystalline In 2S 3 underlayer promotes the growth of a tetragonal β-In 2S 3-like phase V xIn (2-x)S 3, which exhibits a distinct sub-band gap absorption peak with onset near 1.1 eV in agreement with computational predictions. But, the V xIn (2-x)S 3 films lack the lower energy transition predicted for a partially filled IB, and photoelectrochemical devices reveal a photocurrent response only from illumination with energy sufficient to span the parent band-gap.« less

  8. Performance of a first generation X-band photoelectron rf gun

    DOE PAGES

    Limborg-Deprey, C.; Adolphsen, C.; McCormick, D.; ...

    2016-05-04

    Building more compact accelerators to deliver high brightness electron beams for the generation of high flux, highly coherent radiation is a priority for the photon science community. A relatively straightforward reduction in footprint can be achieved by using high-gradient X-band (11.4 GHz) rf technology. To this end, an X-band injector consisting of a 5.5 cell rf gun and a 1-m long linac has been commissioned at SLAC. It delivers an 85 MeV electron beam with peak brightness somewhat better than that achieved in S-band photoinjectors, such as the one developed for the Linac Coherent Light Source (LCLS). The X-band rfmore » gun operates with up to a 200 MV/m peak field on the cathode, and has been used to produce bunches of a few pC to 1.2 nC in charge. Notably, bunch lengths as short as 120 fs rms have been measured for charges of 5 pC (~3×10 7 electrons), and normalized transverse emittances as small as 0.22 mm-mrad have been measured for this same charge level. Bunch lengths as short as 400 (250) fs rms have been achieved for electron bunches of 100 (20) pC with transverse normalized emittances of 0.7 (0.35) mm-mrad. As a result, we report on the performance and the lessons learned from the operation and optimization of this first generation X-band gun.« less

  9. Performance of a first generation X-band photoelectron rf gun

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Limborg-Deprey, C.; Adolphsen, C.; McCormick, D.

    Building more compact accelerators to deliver high brightness electron beams for the generation of high flux, highly coherent radiation is a priority for the photon science community. A relatively straightforward reduction in footprint can be achieved by using high-gradient X-band (11.4 GHz) rf technology. To this end, an X-band injector consisting of a 5.5 cell rf gun and a 1-m long linac has been commissioned at SLAC. It delivers an 85 MeV electron beam with peak brightness somewhat better than that achieved in S-band photoinjectors, such as the one developed for the Linac Coherent Light Source (LCLS). The X-band rfmore » gun operates with up to a 200 MV/m peak field on the cathode, and has been used to produce bunches of a few pC to 1.2 nC in charge. Notably, bunch lengths as short as 120 fs rms have been measured for charges of 5 pC (~3×10 7 electrons), and normalized transverse emittances as small as 0.22 mm-mrad have been measured for this same charge level. Bunch lengths as short as 400 (250) fs rms have been achieved for electron bunches of 100 (20) pC with transverse normalized emittances of 0.7 (0.35) mm-mrad. As a result, we report on the performance and the lessons learned from the operation and optimization of this first generation X-band gun.« less

  10. Theoretical investigation of the structural, electronic, and thermodynamic properties of CdS1-xSex alloys

    NASA Astrophysics Data System (ADS)

    Long, Debing; Li, Mingkai; Meng, Dongxue; Ahuja, Rajeev; He, Yunbin

    2018-03-01

    In this work, the structural, electronic, and thermodynamic properties of wurtzite (WZ) and zincblende (ZB) CdS1-xSex alloys are investigated using the density functional theory (DFT) and the cluster expansion method. A special quasirandom structure containing 16 atoms is constructed to calculate the band structures of random alloys. The band gaps of CdS1-xSex alloys are direct and decrease as the Se content increases. The delta self-consistent-field method is applied to correct band gaps that are underestimated by DFT. The band offsets clearly reflect the variation in valence band maxima and conduction band minima, thus providing information useful to the design of relevant quantum well structures. The positive formation enthalpies of both phases imply that CdS1-xSex is an immiscible system and tends to phase separate. The influence of lattice vibrations on the phase diagram is investigated by calculating the phonon density of states. Lattice vibration effects can reduce the critical temperature Tc and increase alloy solid solubilities. This influence is especially significant in the ZB structure. When only chemical interactions are present, the Tc values for WZ- and ZB-CdS1-xSex are 260 K and 249 K, respectively. The lattice vibration enthalpy and entropy lower the Tc to 255 K and 233 K, respectively.

  11. Electronic structure and optical properties of CdSxSe1-x solid solution nanostructures from X-ray absorption near edge structure, X-ray excited optical luminescence, and density functional theory investigations

    NASA Astrophysics Data System (ADS)

    Murphy, M. W.; Yiu, Y. M.; Ward, M. J.; Liu, L.; Hu, Y.; Zapien, J. A.; Liu, Yingkai; Sham, T. K.

    2014-11-01

    The electronic structure and optical properties of a series of iso-electronic and iso-structural CdSxSe1-x solid solution nanostructures have been investigated using X-ray absorption near edge structure, extended X-ray absorption fine structure, and X-ray excited optical luminescence at various absorption edges of Cd, S, and Se. It is found that the system exhibits compositions, with variable local structure in-between that of CdS and CdSe accompanied by tunable optical band gap between that of CdS and CdSe. Theoretical calculation using density functional theory has been carried out to elucidate the observations. It is also found that luminescence induced by X-ray excitation shows new optical channels not observed previously with laser excitation. The implications of these observations are discussed.

  12. Dual-band QWIP MWIR/LWIR focal plane array test results

    NASA Astrophysics Data System (ADS)

    Goldberg, Arnold C.; Fischer, Theodore; Kennerly, Stephen; Wang, Samuel C.; Sundaram, Mani; Uppal, Parvez; Winn, Michael L.; Milne, Gregory L.; Stevens, Mark A.

    2000-07-01

    We report on the results of laboratory and field tests on a pixel-registered, 2-color MWIR/LWIR 256 X 256 QWIP FPA with simultaneous integrating capability. The FPA studied contained stacked QWIP structures with spectral peaks at 5.1 micrometer and 9.0 micrometer. Normally incident radiation was coupled into the devices using a diffraction grating designed to operate in both spectral bands. Each pixel is connected to the read-out integrated circuit by three bumps to permit the application of separate bias levels to each QWIP stack and allow simultaneous integration of the signal current in each band. We found the FPA to have high pixel operability, well balanced response, good imaging performance, high optical fill factor, and low spectral crosstalk. We present data on measurements of the noise-equivalent temperature difference of the FPA in both bands as functions of temperature and bias. The FPA data are compared to single-pixel data taken on devices from the same wafer. We also present data on the sensitivity of this FPA to polarized light. It is found that the LWIR portion of the device is very sensitive to the direction of polarization of the incident light. The MWIR part of the device is relatively insensitive to the polarization. In addition, imagery was taken with this FPA of military targets in the field. Image fusion techniques were applied to the resulting images.

  13. Tropical-forest biomass estimation at X-Band from the spaceborne TanDEM-X interferometer

    Treesearch

    R. Treuhaft; F. Goncalves; J.R. dos Santos; M. Keller; M. Palace; S.N. Madsen; F. Sullivan; P.M.L.A. Graca

    2014-01-01

    This letter reports the sensitivity of X-band interferometric synthetic aperture radar (InSAR) data from the first dual-spacecraft radar interferometer, TanDEM-X, to variations in tropical-forest aboveground biomass (AGB). It also reports the first tropical-forest AGB estimates fromTanDEM-X data. Tropical forests account for...

  14. Graphene-insulator-semiconductor capacitors as superior test structures for photoelectric determination of semiconductor devices band diagrams

    NASA Astrophysics Data System (ADS)

    Piskorski, K.; Passi, V.; Ruhkopf, J.; Lemme, M. C.; Przewlocki, H. M.

    2018-05-01

    We report on the advantages of using Graphene-Insulator-Semiconductor (GIS) instead of Metal-Insulator-Semiconductor (MIS) structures in reliable and precise photoelectric determination of the band alignment at the semiconductor-insulator interface and of the insulator band gap determination. Due to the high transparency to light of the graphene gate in GIS structures large photocurrents due to emission of both electrons and holes from the substrate and negligible photocurrents due to emission of carriers from the gate can be obtained, which allows reliable determination of barrier heights for both electrons, Ee and holes, Eh from the semiconductor substrate. Knowing the values of both Ee and Eh allows direct determination of the insulator band gap EG(I). Photoelectric measurements were made of a series of Graphene-SiO2-Si structures and an example is shown of the results obtained in sequential measurements of the same structure giving the following barrier height values: Ee = 4.34 ± 0.01 eV and Eh = 4.70 ± 0.03 eV. Based on this result and results obtained for other structures in the series we conservatively estimate the maximum uncertainty of both barrier heights estimations at ± 0.05 eV. This sets the SiO2 band gap estimation at EG(I) = 7.92 ± 0.1 eV. It is shown that widely different SiO2 band gap values were found by research groups using various determination methods. We hypothesize that these differences are due to different sensitivities of measurement methods used to the existence of the SiO2 valence band tail.

  15. Design and analysis of coplanar waveguide triple-band antenna based on defected ground structure

    NASA Astrophysics Data System (ADS)

    Lv, Hong; Chen, Wanli; Xia, Xinsheng; Qi, Peng; Sun, Quanling

    2017-11-01

    A kind of coplanar waveguide triple-band antenna based on defected ground structure is proposed, which has novel structure. Three batches with different frequency band are constructed by utilizing line combination, overlapping, and symmetry method. Stop band signals among three frequency bands are effectively suppressed by slots with different structures. More satisfactory impedance matching is realized by means of changing slot structure and improving return-loss. The presented antenna can operates simultaneously in various systems such as 3G / 4G wireless communication, Bluetooth, Worldwide Interoperability for Microwave Access, Wireless LAN. Test results show that the antenna has good radiation and gain in its working frequency band, and that it has great application potentials.

  16. Bone structure studies with holographic interferometric nondestructive testing and x-ray methods

    NASA Astrophysics Data System (ADS)

    Silvennoinen, Raimo; Nygren, Kaarlo; Rouvinen, Juha; Petrova, Valentina V.

    1994-02-01

    Changes in the biomechanics and in the molecular texture and structure of isolated radioulnar bones of subadult European moose (Alces alces L.) collected in various environmentally polluted areas of Finland were investigated by means of holographic interferometric non- destructive testing (HNDT), radiological, morphometrical, and x-ray diffraction methods. By means of small caudal-cranial bending forces, the surface movements of the lower end (distal epiphysis) of the radial bone were recorded with the HNDT method. To study bone molecular texture and structure changes under external compressing forces, the samples for x-ray diffraction analysis were taken from the upper end of the ulnar bone (olecranon tip). Results showed that the bones obtained from the Harjavalta area and those of North Karelian moose showing malnutrition and healing femoral fractures produced different HNDT pictures compared with the four normally developed North Karelian moose. In the x-ray diffraction, the Harjavalta samples showed changes in molecular texture and structure compared with the samples from the apparently normal North Karelian animals.

  17. Electronic structures of anatase (TiO2)1-x(TaON)x solid solutions: a first-principles study.

    PubMed

    Dang, Wenqiang; Chen, Hungru; Umezawa, Naoto; Zhang, Junying

    2015-07-21

    Sensitizing wide band gap photo-functional materials under visible-light irradiation is an important task for efficient solar energy conversion. Although nitrogen doping into anatase TiO2 has been extensively studied for this purpose, it is hard to increase the nitrogen content in anatase TiO2 because of the aliovalent nitrogen substituted for oxygen, leading to the formation of secondary phases or defects that hamper the migration of photoexcited charge carriers. In this paper, electronic structures of (TiO2)1-x(TaON)x (0 ≤ x ≤ 1) solid solutions, in which the stoichiometry is satisfied with the co-substitution of Ti for Ta along with O for N, are investigated within the anatase crystal structure using first-principles calculations. Our computational results show that the solid solutions have substantially narrower band gaps than TiO2, without introducing any localized energy states in the forbidden gap. In addition, in comparison with the pristine TiO2, the solid solution has a direct band gap when the content of TaON exceeds 0.25, which is advantageous to light absorption. The valence band maximum (VBM) of the solid solutions, which is mainly composed of N 2p states hybridized with O 2p, Ti 3d or Ta 5d orbitals, is higher in energy than that of pristine anatase TiO2 consisting of non-bonding O 2p states. On the other hand, incorporating TaON into TiO2 causes the formation of d-d bonding states through π interactions and substantially lowers the conduction band minimum (CBM) because of the shortened distance between some metal atoms. As a result, the anatase (TiO2)1-x(TaON)x is expected to become a promising visible-light absorber. In addition, some atomic configurations are found to possess exceptionally narrow band gaps.

  18. Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

    NASA Astrophysics Data System (ADS)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

    2015-04-01

    High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

  19. The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS(1-x)Se(x) nanostructures.

    PubMed

    Dai, Jun; Zhou, Pengxia; Lu, Junfeng; Zheng, Hongge; Guo, Jiyuan; Wang, Fang; Gu, Ning; Xu, Chunxiang

    2016-01-14

    Bandgap tunable semiconductor materials have wide application in integrated-optoelectronic and communication devices. The CdS1-xSex ternary semiconductor materials covering green-red bands have been reported previously, but their basic band-gap and optical properties crucial to the performance of the CdS1-xSex-based optoelectronic devices have not been deeply understood. In this paper, we theoretically simulated and discussed the feasibility of bandgap-tunable CdS1-xSex nanomaterials for designing wavelength tunable microlasers. Then we fabricated the CdS1-xSex nanobelts with their band gap ranging from 2.4 to 1.74 eV by adjusting the composition ratio x in the vapor-phase-transport growth process. The temperature-dependent photoluminescence and exciton-related optical constants of the CdS1-xSex nanobelts were carefully demonstrated. Finally, the wavelength-tunable Fabry-Perot lasing in CdS1-xSex nanobelts was obtained, and the Fabry-Perot lasing mechanism was numerically simulated by the FDTD method. The systematic results on the mechanism of the tunable band gap, exciton properties and lasing of the CdS1-xSex nanostructure help us deeply understand the intrinsic optical properties of this material, and will build a strong foundation for future application of green-red wavelength-tunable CdS1-xSex microlasers.

  20. Design and cold test of period-tapered double-ridge-loaded folded waveguide slow wave structure for Ka band TWTs

    NASA Astrophysics Data System (ADS)

    Lu, Zhigang; Su, Zhicheng; Wei, Yanyu

    2018-05-01

    A double-ridge-loaded folded waveguide (DRL-FW) travelling wave tube (TWT) based on period-tapered structure is proposed. Through analysing the dispersion characteristics of the DRL-FW slow wave structure (SWS), the physical mechanism of the band-edge oscillation is obtained. Period-tapered SWS is proposed and analysed for verifying the feasibility in suppressing upper-band-edge oscillation and increasing the output power. Then the electromagnetic characteristics and the beam-wave interaction of TWT based on the period-tapered DRL-FW SWS are investigated. The calculation results predict that it potentially could provide continuous wave power over 600W from 29 GHz to 32 GHz without upper-band-edge oscillation. The bandwidth expands from 29-31GHz to 29-32GHz and electron efficiency is increased from more than 8.3% to more than 11%, while the range of operating voltage expands from 22kV-22.5kV to 22kV-24kV. The corresponding saturated gain can reach over 36.8 dB. In addition, we have carried out experimental tests on the transmission characteristics of period-tapered DRL-FW SWS. The cold test results show that the voltage stand-wave ratio (VSWR) is below 1.8 in the range of 29-32GHz. Good transmission characteristics greatly reduce the risk of reflection wave oscillation, thus improving the stability of DRL-FW TWT.

  1. Beam Measurement of 11.424 GHz X-Band Linac for Compton Scattering X-ray Source

    NASA Astrophysics Data System (ADS)

    Natsui, Takuya; Mori, Azusa; Masuda, Hirotoshi; Uesaka, Mitsuru; Sakamoto, Fumito

    2010-11-01

    An inverse Compton scattering X-ray source for medical applications, consisting of an X-band (11.424 GHz) linac and Q-switched Nd:YAG laser, is currently being developed at the University of Tokyo. This system uses an X-band 3.5-cell thermionic cathode RF gun for electron beam generation. We can obtain a multi-bunch electron beam with this gun. The beam is accelerated to 30 MeV by a traveling-wave accelerating tube. So far, we have verified stable beam generation (around 2.3 MeV) by using the newly designed RF gun and we have succeeded in beam transportation to a beam dump.

  2. Solving complex band structure problems with the FEAST eigenvalue algorithm

    NASA Astrophysics Data System (ADS)

    Laux, S. E.

    2012-08-01

    With straightforward extension, the FEAST eigenvalue algorithm [Polizzi, Phys. Rev. B 79, 115112 (2009)] is capable of solving the generalized eigenvalue problems representing traveling-wave problems—as exemplified by the complex band-structure problem—even though the matrices involved are complex, non-Hermitian, and singular, and hence outside the originally stated range of applicability of the algorithm. The obtained eigenvalues/eigenvectors, however, contain spurious solutions which must be detected and removed. The efficiency and parallel structure of the original algorithm are unaltered. The complex band structures of Si layers of varying thicknesses and InAs nanowires of varying radii are computed as test problems.

  3. Inverse Band Structure Design via Materials Database Screening: Application to Square Planar Thermoelectrics

    DOE PAGES

    Isaacs, Eric B.; Wolverton, Chris

    2018-02-26

    Electronic band structure contains a wealth of information on the electronic properties of a solid and is routinely computed. However, the more difficult problem of designing a solid with a desired band structure is an outstanding challenge. In order to address this inverse band structure design problem, we devise an approach using materials database screening with materials attributes based on the constituent elements, nominal electron count, crystal structure, and thermodynamics. Our strategy is tested in the context of thermoelectric materials, for which a targeted band structure containing both flat and dispersive components with respect to crystal momentum is highly desirable.more » We screen for thermodynamically stable or metastable compounds containing d 8 transition metals coordinated by anions in a square planar geometry in order to mimic the properties of recently identified oxide thermoelectrics with such a band structure. In doing so, we identify 157 compounds out of a total of over half a million candidates. After further screening based on electronic band gap and structural anisotropy, we explicitly compute the band structures for the several of the candidates in order to validate the approach. We successfully find two new oxide systems that achieve the targeted band structure. Electronic transport calculations on these two compounds, Ba 2PdO 3 and La 4PdO 7, confirm promising thermoelectric power factor behavior for the compounds. This methodology is easily adapted to other targeted band structures and should be widely applicable to a variety of design problems.« less

  4. Inverse Band Structure Design via Materials Database Screening: Application to Square Planar Thermoelectrics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Isaacs, Eric B.; Wolverton, Chris

    Electronic band structure contains a wealth of information on the electronic properties of a solid and is routinely computed. However, the more difficult problem of designing a solid with a desired band structure is an outstanding challenge. In order to address this inverse band structure design problem, we devise an approach using materials database screening with materials attributes based on the constituent elements, nominal electron count, crystal structure, and thermodynamics. Our strategy is tested in the context of thermoelectric materials, for which a targeted band structure containing both flat and dispersive components with respect to crystal momentum is highly desirable.more » We screen for thermodynamically stable or metastable compounds containing d 8 transition metals coordinated by anions in a square planar geometry in order to mimic the properties of recently identified oxide thermoelectrics with such a band structure. In doing so, we identify 157 compounds out of a total of over half a million candidates. After further screening based on electronic band gap and structural anisotropy, we explicitly compute the band structures for the several of the candidates in order to validate the approach. We successfully find two new oxide systems that achieve the targeted band structure. Electronic transport calculations on these two compounds, Ba 2PdO 3 and La 4PdO 7, confirm promising thermoelectric power factor behavior for the compounds. This methodology is easily adapted to other targeted band structures and should be widely applicable to a variety of design problems.« less

  5. Density functional theory calculations for the band gap and formation energy of Pr4-xCaxSi12O3+xN18-x; a highly disordered compound with low symmetry and a large cell size.

    PubMed

    Hong, Sung Un; Singh, Satendra Pal; Pyo, Myoungho; Park, Woon Bae; Sohn, Kee-Sun

    2017-06-28

    A novel oxynitride compound, Pr 4-x Ca x Si 12 O 3+x N 18-x , synthesized using a solid-state route has been characterized as a monoclinic structure in the C2 space group using Rietveld refinement on synchrotron powder X-ray diffraction data. The crystal structure of this compound was disordered due to the random distribution of Ca/Pr and N/O ions at various Wyckoff sites. A pragmatic approach for an ab initio calculation based on density function theory (DFT) for this disordered compound has been implemented to calculate an acceptable value of the band gap and formation energy. In general, for the DFT calculation of a disordered compound, a sufficiently large super cell and infinite variety of ensemble configurations is adopted to simulate the random distribution of ions; however, such an approach is time consuming and cost ineffective. Even a single unit cell model gave rise to 43 008 independent configurations as an input model for the DFT calculations. Since it was nearly impossible to calculate the formation energy and the band gap energy for all 43 008 configurations, an elitist non-dominated sorting genetic algorithm (NSGA-II) was employed to find the plausible configurations. In the NSGA-II, all 43 008 configurations were mathematically treated as genomes and the calculated band gap and the formation energy as the objective (fitness) function. Generalized gradient approximation (GGA) was first employed in the preliminary screening using NSGA-II, and thereafter a hybrid functional calculation (HSE06) was executed only for the most plausible GGA-relaxed configurations with lower formation and higher band gap energies. The final band gap energy (3.62 eV) obtained after averaging over the selected configurations, resembles closely the experimental band gap value (4.11 eV).

  6. Pressure effects on band structures in dense lithium

    NASA Astrophysics Data System (ADS)

    Goto, Naoyuki; Nagara, Hitose

    2012-07-01

    We studied the change of the band structures in some structures of Li predicted at high pressures, using GGA and GW calculations. The width of the 1s band coming from the 1s electron of Li shows broadening by the pressurization, which is the normal behavior of bands at high pressure. The width of the band just below the Fermi level decreases by the pressurization, which is an opposite behavior to the normal bands. The character of this narrowing band is mostly p-like with a little s-like portion. The band gaps in some structures are really observed even by the GGA calculations. The gaps by the GW calculations increase to about 1.5 times the GGA values. Generally the one-shot GW calculation (diagonal only calculations) gives more reliable values than the GGA, but it may fail to predict band gaps for the case where band dispersion shows complex crossing near the Fermi level. There remains some structures for which GW calculations with off-diagonal elements taken into account are needed to identify the phase to be metallic or semiconducting.

  7. Low-loss negative index metamaterials for X, Ku, and K microwave bands

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, David A.; Vedral, L. James; Smith, David A.

    2015-04-15

    Low-loss, negative-index of refraction metamaterials were designed and tested for X, Ku, and K microwave frequency bands. An S-shaped, split-ring resonator was used as a unit cell to design homogeneous slabs of negative-index metamaterials. Then, the slabs of metamaterials were cut unto prisms to measure experimentally the negative index of refraction of a plane electromagnetic wave. Theoretical simulations using High-Frequency Structural Simulator, a finite element equation solver, were in good agreement with experimental measurements. The negative index of refraction was retrieved from the angle- and frequency-dependence of the transmitted intensity of the microwave beam through the metamaterial prism and comparedmore » well to simulations; in addition, near-field electromagnetic intensity mapping was conducted with an infrared camera, and there was also a good match with the simulations for expected frequency ranges for the negative index of refraction.« less

  8. Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

    NASA Astrophysics Data System (ADS)

    Osinnykh, I. V.; Malin, T. V.; Zhuravlev, K. S.

    2018-03-01

    The photoluminescence properties of the intensive defect-related emission in heavily doped Al x Ga l-x N:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

  9. Creating a Test-Validated Finite-Element Model of the X-56A Aircraft Structure

    NASA Technical Reports Server (NTRS)

    Pak, Chan-Gi; Truong, Samson

    2014-01-01

    Small modeling errors in a finite-element model will eventually induce errors in the structural flexibility and mass, thus propagating into unpredictable errors in the unsteady aerodynamics and the control law design. One of the primary objectives of the X-56A Multi-Utility Technology Testbed aircraft is the flight demonstration of active flutter suppression and, therefore, in this study, the identification of the primary and secondary modes for the structural model tuning based on the flutter analysis of the X-56A aircraft. The ground-vibration test-validated structural dynamic finite-element model of the X-56A aircraft is created in this study. The structural dynamic finite-element model of the X-56A aircraft is improved using a model-tuning tool. In this study, two different weight configurations of the X-56A aircraft have been improved in a single optimization run. Frequency and the cross-orthogonality (mode shape) matrix were the primary focus for improvement, whereas other properties such as c.g. location, total weight, and off-diagonal terms of the mass orthogonality matrix were used as constraints. The end result was an improved structural dynamic finite-element model configuration for the X-56A aircraft. Improved frequencies and mode shapes in this study increased average flutter speeds of the X-56A aircraft by 7.6% compared to the baseline model.

  10. Real-structure effects: Band gaps of Mg_xZn_{1-x}O, Cd_xZn_{1-x}O, and n-type ZnO from ab-initio calculations

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schleife, A; Bechstedt, F

    2012-02-15

    Many-body perturbation theory is applied to compute the quasiparticle electronic structures and the optical-absorption spectra (including excitonic effects) for several transparent conducting oxides. We discuss HSE+G{sub 0}W{sub 0} results for band structures, fundamental band gaps, and effective electron masses of MgO, ZnO, CdO, SnO{sub 2}, SnO, In{sub 2}O{sub 3}, and SiO{sub 2}. The Bethe-Salpeter equation is solved to account for excitonic effects in the calculation of the frequency-dependent absorption coefficients. We show that the HSE+G{sub 0}W{sub 0} approach and the solution of the Bethe-Salpeter equation are very well-suited to describe the electronic structure and the optical properties of various transparentmore » conducting oxides in good agreement with experiment.« less

  11. Electronic structure and optical properties of noncentrosymmetric LiGaSe2: Experimental measurements and DFT band structure calculations

    NASA Astrophysics Data System (ADS)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Ananchenko, L. N.; Isaenko, L. I.; Yelisseyev, A. P.; Khyzhun, O. Y.

    2017-04-01

    We report on measurements of X-ray photoelectron (XP) spectra for pristine and Ar+ ion-irradiated surfaces of LiGaSe2 single crystal grown by Bridgman-Stockbarger method. Electronic structure of the LiGaSe2 compound is studied from a theoretical and experimental viewpoint. In particular, total and partial densities of states of LiGaSe2 are investigated by density functional theory (DFT) calculations employing the augmented plane wave + local orbitals (APW + lo) method and they are verified by data of X-ray spectroscopy measurements. The DFT calculations indicate that the main contributors to the valence band of LiGaSe2 are the Se 4p states, which contribute mainly at the top and in the upper portion of the valence band, with also essential contributions of these states in the lower portion of the band. Other substantial contributions to the valence band of LiGaSe2 emerge from the Ga 4s and Ga 4p states contributing mainly at the lower ant upper portions of the valence band, respectively. With respect to the conduction band, the calculations indicate that its bottom is composed mainly from contributions of the unoccupied Ga s and Se p states. The present calculations are confirmed experimentally when comparing the XP valence-band spectrum of the LiGaS2 single crystal on a common energy scale with the X-ray emission bands representing the energy distribution of the Ga 4p and Se 4p states. Measurements of the fundamental absorption edges at room temperature reveal that bandgap value, Eg, of LiGaSe2 is equal to 3.47 eV and the Eg value increases up to 3.66 eV when decreasing temperature to 80 K. The main optical characteristics of the LiGaSe2 compound are clarified by the DFT calculations.

  12. Integrative interactive visualization of crystal structure, band structure, and Brillouin zone

    NASA Astrophysics Data System (ADS)

    Hanson, Robert; Hinke, Ben; van Koevering, Matthew; Oses, Corey; Toher, Cormac; Hicks, David; Gossett, Eric; Plata Ramos, Jose; Curtarolo, Stefano; Aflow Collaboration

    The AFLOW library is an open-access database for high throughput ab-initio calculations that serves as a resource for the dissemination of computational results in the area of materials science. Our project aims to create an interactive web-based visualization of any structure in the AFLOW database that has associate band structure data in a way that allows novel simultaneous exploration of the crystal structure, band structure, and Brillouin zone. Interactivity is obtained using two synchronized JSmol implementations, one for the crystal structure and one for the Brillouin zone, along with a D3-based band-structure diagram produced on the fly from data obtained from the AFLOW database. The current website portal (http://aflowlib.mems.duke.edu/users/jmolers/matt/website) allows interactive access and visualization of crystal structure, Brillouin zone and band structure for more than 55,000 inorganic crystal structures. This work was supported by the US Navy Office of Naval Research through a Broad Area Announcement administered by Duke University.

  13. Band structures in fractal grading porous phononic crystals

    NASA Astrophysics Data System (ADS)

    Wang, Kai; Liu, Ying; Liang, Tianshu; Wang, Bin

    2018-05-01

    In this paper, a new grading porous structure is introduced based on a Sierpinski triangle routine, and wave propagation in this fractal grading porous phononic crystal is investigated. The influences of fractal hierarchy and porosity on the band structures in fractal graidng porous phononic crystals are clarified. Vibration modes of unit cell at absolute band gap edges are given to manifest formation mechanism of absolute band gaps. The results show that absolute band gaps are easy to form in fractal structures comparatively to the normal ones with the same porosity. Structures with higher fractal hierarchies benefit multiple wider absolute band gaps. This work provides useful guidance in design of fractal porous phononic crystals.

  14. Spaced-antenna wind estimation using an X-band active phased-array weather radar

    NASA Astrophysics Data System (ADS)

    Venkatesh, Vijay

    Over the past few decades, several single radar methods have been developed to probe the kinematic structure of storms. All these methods trade angular-resolution to retrieve the wind-field. To date, the spaced-antenna method has been employed for profiling the ionosphere and the precipitation free lower atmosphere. This work focuses on applying the spaced-antenna method on an X-band active phased-array radar for high resolution horizontal wind-field retrieval from precipitation echoes. The ability to segment the array face into multiple displaced apertures allows for flexible spaced-antenna implementations. The methodology employed herein comprises of Monte-Carlo simulations to optimize the spaced-antenna system design and analysis of real data collected with the designed phased-array system. The contribution that underpins this dissertation is the demonstration of qualitative agreement between spaced-antenna and Doppler beam swinging retrievals based on real data. First, simulations of backscattered electric fields at the antenna array elements are validated using theoretical expressions. Based on the simulations, the degrees of freedom in the spaced-antenna system design are optimized for retrieval of mean baseline wind. We show that the designed X-band spaced-antenna system has lower retrieval uncertainty than the existing S-band spaced-antenna implementation on the NWRT. This is because of the flexibility to synthesize small overlapping apertures and the ability to obtain statistically independent samples at a faster rate at X-band. We then demonstrate a technique to make relative phase-center displacement measurements based on simulations and real data from the phased-array spaced-antenna system. This simple method uses statistics of precipitation echoes and apriori beamwidth measurements to make field repeatable phase-center displacement measurements. Finally, we test the hypothesis that wind-field curvature effects are common to both the spaced-antenna and

  15. Electromagnetic properties of absorber fabric coated with BaFe12O19/MWCNTs/PANi nanocomposite in X and Ku bands frequency

    NASA Astrophysics Data System (ADS)

    Afzali, Arezoo; Mottaghitalab, Vahid; Seyyed Afghahi, Seyyed Salman; Jafarian, Mojtaba; Atassi, Yomen

    2017-11-01

    Current investigation focuses on the electromagnetic properties of nonwoven fabric coated with BaFe12O19 (BHF) /MWCNTs/PANi nanocomposite in X and Ku bands. The BHF/MWCNTs and BHF/MWCNTs/PANi nanocomposites are prepared using the sol gel and in-situ polymerization methods respectively. The absorbent fabric was prepared based on applying a 40 wt% of BHF/MWCNTs/PANi nanocomposite in silicon resin on nonwoven fabric via roller coating technique The X-ray diffraction (XRD), scanning electron microscopy (SEM), vibrating sample magnetometer (VSM) and vector network analysis (VNA) are used to peruse microstructural, magnetic and electromagnetic features of the composite and absorber fabric respectively. The microscopic images of the fabric coated with magnetic nanocomposite shows a homogenous layer of nanoparticles on the fabric surface. The maximum reflection loss of binary nano-composite BHF/MWCNTs was measured about -28.50 dB at 11.72 GHz with 1.7 GHz bandwidth (RL < -10 dB) in X band. Moreover in Ku band, the maximum reflection loss is -29.66 dB at 15.78 GHz with 3.2 GHz bandwidths. Also the ternary nanocomposite BHF/MWCNTs/PANi exhibits a broad band absorber over a wide range of X band with a maximum reflection loss of -36.2 dB at 10.2 GHz with 1.5 GHz bandwidth and in the Ku band has arrived a maximum reflection loss of -37.65 dB at 12.84 GHz with 2.43 GHz bandwidth. This result reflects the synergistic effect of the different components with different loss mechanisms. As it is observed due to the presence of PANi in the structure of nanocomposite, the amount of absorption has increased extraordinarily. The absorber fabric exhibits a maximum reflection loss of -24.2 dB at 11.6 GHz with 4 GHz bandwidth in X band. However, in Ku band, the absorber fabric has had the maximum absorption in 16.88 GHz that is about -24.34 dB with 6 GHz bandwidth. Therefore, results indicate that the fabric samples coated represents appreciable maximum absorption value of more than 99% in

  16. Electronic and atomic structures of Ti{sub 1-x}Al{sub x}N thin films related to their damage behavior

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tuilier, M.-H.; Pac, M.-J.; Girleanu, M.

    2008-04-15

    Ti and Al K-edge x-ray absorption spectroscopy is used to investigate the electronic structure of Ti{sub 1-x}Al{sub x}N thin films deposited by reactive magnetron sputtering. The experimental near edge spectra of TiN and AlN are interpreted in the light of unoccupied density of state band structure calculations. The comparison of the structural parameters derived from x-ray absorption fine structure and x-ray diffraction reveals segregation between Al-rich and Ti-rich domains within the Ti{sub 1-x}Al{sub x}N films. Whereas x-ray diffraction probes only the crystallized domains, the structural information derived from extended x-ray absorption fine structure analysis turns on both crystalline and grainmore » boundaries. The results are discussed by considering the damage behavior of the films depending on the composition.« less

  17. Intercomparison of attenuation correction algorithms for single-polarized X-band radars

    NASA Astrophysics Data System (ADS)

    Lengfeld, K.; Berenguer, M.; Sempere Torres, D.

    2018-03-01

    Attenuation due to liquid water is one of the largest uncertainties in radar observations. The effects of attenuation are generally inversely proportional to the wavelength, i.e. observations from X-band radars are more affected by attenuation than those from C- or S-band systems. On the other hand, X-band radars can measure precipitation fields in higher temporal and spatial resolution and are more mobile and easier to install due to smaller antennas. A first algorithm for attenuation correction in single-polarized systems was proposed by Hitschfeld and Bordan (1954) (HB), but it gets unstable in case of small errors (e.g. in the radar calibration) and strong attenuation. Therefore, methods have been developed that restrict attenuation correction to keep the algorithm stable, using e.g. surface echoes (for space-borne radars) and mountain returns (for ground radars) as a final value (FV), or adjustment of the radar constant (C) or the coefficient α. In the absence of mountain returns, measurements from C- or S-band radars can be used to constrain the correction. All these methods are based on the statistical relation between reflectivity and specific attenuation. Another way to correct for attenuation in X-band radar observations is to use additional information from less attenuated radar systems, e.g. the ratio between X-band and C- or S-band radar measurements. Lengfeld et al. (2016) proposed such a method based isotonic regression of the ratio between X- and C-band radar observations along the radar beam. This study presents a comparison of the original HB algorithm and three algorithms based on the statistical relation between reflectivity and specific attenuation as well as two methods implementing additional information of C-band radar measurements. Their performance in two precipitation events (one mainly convective and the other one stratiform) shows that a restriction of the HB is necessary to avoid instabilities. A comparison with vertically pointing

  18. Permanent magnet focused X-band photoinjector

    DOEpatents

    Yu, David U. L.; Rosenzweig, James

    2002-09-10

    A compact high energy photoelectron injector integrates the photocathode directly into a multicell linear accelerator with no drift space between the injection and the linac. High electron beam brightness is achieved by accelerating a tightly focused electron beam in an integrated, multi-cell, X-band rf linear accelerator (linac). The photoelectron linac employs a Plane-Wave-Transformer (PWT) design which provides strong cell-to-cell coupling, easing manufacturing tolerances and costs.

  19. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

    PubMed

    Wei, Wei; Qin, Zhixin; Fan, Shunfei; Li, Zhiwei; Shi, Kai; Zhu, Qinsheng; Zhang, Guoyi

    2012-10-10

    A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

  20. Monitoring deformation at the Geysers Geothermal Field, California using C-band and X-band interferometric synthetic aperture radar

    DOE PAGES

    Vasco, D. W.; Rutqvist, Jonny; Ferretti, Alessandro; ...

    2013-06-07

    In this study, we resolve deformation at The Geysers Geothermal Field using two distinct sets of interferometric synthetic aperture radar (InSAR) data. The first set of observations utilize archived European Space Agency C-band synthetic aperture radar data from 1992 through 1999 to image the long-term and large-scale subsidence at The Geysers. The peak range velocity of approximately 50 mm/year agrees with previous estimates from leveling and global positioning system observations. Data from a second set of measurements, acquired by TerraSAR-X satellites, extend from May 2011 until April 2012 and overlap the C-band data spatially but not temporally. These X-band data,more » analyzed using a combined permanent and distributed scatterer algorithm, provide a higher density of scatterers (1122 per square kilometer) than do the C-band data (12 per square kilometer). The TerraSAR-X observations resolve 1 to 2 cm of deformation due to water injection into a Northwest Geysers enhanced geothermal system well, initiated on October 2011. Lastly, the temporal variation of the deformation is compatible with estimates from coupled numerical modeling.« less

  1. The Celestial Reference Frame at X/Ka-band (8.4/32 GHz)

    NASA Technical Reports Server (NTRS)

    Jacobs, C. S.; Clark, J. E.; Heflin, M. B.; Skjerve, L. J.; Sovers, O. J.; Garcia-Miro, C.; Moll, V. E.; Horiuchi, S.

    2011-01-01

    A celestial reference frame at X/Ka-band (8.4/32 GHz) has been constructed using fifty-one 24-hour sessions with the Deep Space Network. We report on observations which have detected 436 sources covering the full 24 hours of right ascension and declinations down to -45 deg. Comparison of this X/Ka-band frame to the S/X-band (2.3/8.4 GHz) ICRF2 shows wRMS agreement of 200 micro-arcsec in a cos delta and 290 micro-arcsec in delta. There is evidence for zonal errors at the 100 micro-arcsec level. Known errors include limited SNR, lack of phase calibration, troposphere mismodelling, and limited southern geometry. The motivations for extending the ICRF to frequencies above 8 GHz are to access more compact source morphology for improved frame stability, to provide calibrators for phase referencing, and to support spacecraft navigation at Ka-band.

  2. Two-dimensional wide-band-gap nitride semiconductors: Single-layer 1 T -X N2 (X =S ,Se , and Te )

    NASA Astrophysics Data System (ADS)

    Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

    2016-11-01

    Recently, the two-dimensional (2D) semiconductors arsenene and antimonene, with band gaps larger than 2.0 eV, have attracted tremendous interest, especially for potential applications in optoelectronic devices with a photoresponse in the blue and UV range. Motivated by this exciting discovery, types of highly stable wide-band-gap 2D nitride semiconductors were theoretically designed. We propose single-layer 1 T -X N2 (X =S , Se, and Te) via first-principles simulations. We compute 1 T -X N2 (X =S , Se, and Te) with indirect band gaps of 2.825, 2.351, and 2.336 eV, respectively. By applying biaxial strain, they are able to induce the transition from a wide-band-gap semiconductor to a metal, and the range of absorption spectra of 1 T -X N2 (X =S , Se, and Te) obviously extend from the ultraviolet region to the blue-purple light region. With an underlying graphene, we find that 1 T -X N2 can completely shield the light absorption of graphene in the range of 1-1.6 eV. Our research paves the way for optoelectronic devices working under blue or UV light, and mechanical sensors based on these 2D crystals.

  3. Multicolor emission from intermediate band semiconductor ZnO 1-xSe x

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Welna, M.; Baranowski, M.; Linhart, W. M.

    Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E - and upper E + valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emissionmore » is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.« less

  4. Multicolor emission from intermediate band semiconductor ZnO 1-xSe x

    DOE PAGES

    Welna, M.; Baranowski, M.; Linhart, W. M.; ...

    2017-03-13

    Photoluminescence and photomodulated reflectivity measurements of ZnOSe alloys are used to demonstrate a splitting of the valence band due to the band anticrossing interaction between localized Se states and the extended valence band states of the host ZnO matrix. A strong multiband emission associated with optical transitions from the conduction band to lower E - and upper E + valence subbands has been observed at room temperature. The composition dependence of the optical transition energies is well explained by the electronic band structure calculated using the kp method combined with the band anticrossing model. The observation of the multiband emissionmore » is possible because of relatively long recombination lifetimes. Longer than 1 ns lifetimes for holes photoexcited to the lower valence subband offer a potential of using the alloy as an intermediate band semiconductor for solar power conversion applications.« less

  5. Structural and electronic properties of Sr{sub x}Ba{sub 1-x}SnO{sub 3} from first principles calculations

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Moreira, E.; Henriques, J.M.; Azevedo, D.L.

    2012-03-15

    Neutron diffraction data for Sr{sub x}Ba{sub 1-x}SnO{sub 3} (x=0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) solid solutions were used as inputs to obtain optimized geometries and electronic properties using the density functional theory (DFT) formalism considering both the local density and generalized gradient approximations, LDA and GGA, respectively. The crystal structures and SnO{sub 6} octahedra tilting angles found after total energy minimization agree well with experiment, specially for the GGA data. Elastic constants were also obtained and compared with theoretical and experimental results for cubic BaSnO{sub 3}. While the alloys with cubic unit cell have an indirect band gap, tetragonalmore » and orthorhombic alloys exhibit direct band gaps (exception made to x=1.0). The Kohn-Sham minimum electronic band gap oscillates from 1.52 eV (cubic x=0.0, LDA) to 2.61 eV (orthorhombic x=1.0, LDA), and from 0.74 eV (cubic BaSnO{sub 3}, GGA) to 1.97 eV (orthorhombic SrSnO{sub 3}, GGA). Parabolic interpolation of bands has allowed us to estimate the effective masses for charge carriers, which are shown to be anisotropic and larger for holes. - Graphical Abstract: Highlights: Black-Right-Pointing-Pointer DFT calculations were performed on Sr{sub x}Ba{sub 1-x}SnO{sub 3} solid solutions. Black-Right-Pointing-Pointer Calculated crystal structures agree well with experiment. Black-Right-Pointing-Pointer Alloys have direct or indirect gaps depending on the Sr molar fraction. Black-Right-Pointing-Pointer The Kohn-Sham gap variation from x=0.0 to x=1.0 is close to the experimental value. Black-Right-Pointing-Pointer Carrier effective masses are very anisotropic, specially for holes.« less

  6. X-band inverse class-F GaN internally-matched power amplifier

    NASA Astrophysics Data System (ADS)

    Zhao, Bo-Chao; Lu, Yang; Han, Wen-Zhe; Zheng, Jia-Xin; Zhang, Heng-Shuang; Ma, Pei-jun; Ma, Xiao-Hua; Hao, Yue

    2016-09-01

    An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band. Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

  7. Assimilation of attenuated data from X-band network radars using ensemble Kalman filter

    NASA Astrophysics Data System (ADS)

    Cheng, Jing

    good results are obtained. The same EnKF framework with attenuation correction is used to test different possible configurations of 2 hypothetical radars added to the existing network of 4 CASA radars through OSSEs. Though plans to expand the CASA radar network did not materialize, such experiments can provide guidance in the site selection of future X-band or other short-wavelength radar networks, as well as examining the benefit of X-band radar networks that consist of a much larger number of radars. Two QLCSs with different propagation speeds are generated and serve as the truth for our OSSEs. Assimilation and forecast results are compared among the OSSEs, assimilating only X-band or short-wavelength radar data. Overall, radar networks with larger downstream spatial coverage tend to provide overall the best analyses and 1-hour forecasts. The best analyses and forecasts of convective scale structure, however, are obtained when Dual- or Multi-Doppler coverage is preferred, even at the expense of minor loss in spatial coverage. Built-in attenuation correction is then applied, for the first time, to a real case (the 24 May 2011 tornadic storm near Chickasha, Oklahoma), using data from the X-band CASA radars. The attenuation correction procedure is found to be very effective---the analyses obtained using attenuated data are better than those obtained using pre-corrected data when all the values of reflectivity observations are assimilated. The effectiveness of the procedure is further examined by comparing the deterministic and ensemble forecasts started from the analysis of each experiment. The deterministic forecast experiment results indicate that assimilating un-corrected observations directly actually retains some information that might be lost in the pre-corrected CASA observations by forecasting a longer-lasting trailing line, similar to that observed in WSR-88D data. In the ensemble forecasts, assimilating un-corrected observations directly, using our attenuation

  8. Structural and Optical Properties of Cd 1- x Se x Thin Films Deposited by Electron Beam Evaporation Technique

    NASA Astrophysics Data System (ADS)

    Tripathi, Ravishankar Nath; Verma, Aneet Kumar; Rahul, Vishwakarma, S. R.

    2011-10-01

    Cadmium selenide (CdSe) thin films deposited by means of electron beam evaporation technique under high vacuum ˜10 -5 torr on ultrasonically cleaned glass substrate. Using stating materials of various compositions of cadmium and selenium using formula Cd 1- x Se x where x is orbitory constant having value 0.20≤ x ≤0.40 here we take less value of x for the creation of anion vacancy in thin films. In present work the structural properties have been studies using XRD technique and found that starting materials and thin films both are polycrystalline in nature having hexagonal structure. Here we study the effect of composition ratio Cd/Se in starting material and its prepared thin films on its grain size and lattice parameter. From the analysis of X-Ray diffractogram found that lattice parameter and grain size both are decreases with increasing Cd/Se ratio in thin films as well as in starting material the preferred orientation in thin films along (100) plane. The surface morphology was studied using SEM characterization and found that films are smooth and homogeneous. The films have been analysed for optical band gap and absorbed a direct band gap.

  9. Sputter-deposited WO x and MoO x for hole selective contacts

    DOE PAGES

    Bivour, Martin; Zähringer, Florian; Ndione, Paul F.; ...

    2017-09-21

    Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films depositedmore » by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.« less

  10. Sputter-deposited WO x and MoO x for hole selective contacts

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bivour, Martin; Zähringer, Florian; Ndione, Paul F.

    Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films depositedmore » by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.« less

  11. X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound

    NASA Astrophysics Data System (ADS)

    Shcherba, I. D.; Kostyk, L. V.; Noga, H.; Bekenov, L. V.; Uskokovich, D.; Jatsyk, B. M.

    2017-09-01

    The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.

  12. Visible-light absorption and large band-gap bowing of GaN 1-xSb x from first principles

    DOE PAGES

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; ...

    2011-08-01

    Applicability of the Ga(Sb x)N 1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sb x)N 1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sb x)N 1-x alloys could be potential candidates for splitting watermore » under visible light irradiation.« less

  13. Signature of Arctic first-year ice melt pond fraction in X-band SAR imagery

    NASA Astrophysics Data System (ADS)

    Fors, Ane S.; Divine, Dmitry V.; Doulgeris, Anthony P.; Renner, Angelika H. H.; Gerland, Sebastian

    2017-03-01

    In this paper we investigate the potential of melt pond fraction retrieval from X-band polarimetric synthetic aperture radar (SAR) on drifting first-year sea ice. Melt pond fractions retrieved from a helicopter-borne camera system were compared to polarimetric features extracted from four dual-polarimetric X-band SAR scenes, revealing significant relationships. The correlations were strongly dependent on wind speed and SAR incidence angle. Co-polarisation ratio was found to be the most promising SAR feature for melt pond fraction estimation at intermediate wind speeds (6. 2 m s-1), with a Spearman's correlation coefficient of 0. 46. At low wind speeds (0. 6 m s-1), this relation disappeared due to low backscatter from the melt ponds, and backscatter VV-polarisation intensity had the strongest relationship to melt pond fraction with a correlation coefficient of -0. 53. To further investigate these relations, regression fits were made both for the intermediate (R2fit = 0. 21) and low (R2fit = 0. 26) wind case, and the fits were tested on the satellite scenes in the study. The regression fits gave good estimates of mean melt pond fraction for the full satellite scenes, with less than 4 % from a similar statistics derived from analysis of low-altitude imagery captured during helicopter ice-survey flights in the study area. A smoothing window of 51 × 51 pixels gave the best reproduction of the width of the melt pond fraction distribution. A considerable part of the backscatter signal was below the noise floor at SAR incidence angles above ˜ 40°, restricting the information gain from polarimetric features above this threshold. Compared to previous studies in C-band, limitations concerning wind speed and noise floor set stricter constraints on melt pond fraction retrieval in X-band. Despite this, our findings suggest new possibilities in melt pond fraction estimation from X-band SAR, opening for expanded monitoring of melt ponds during melt season in the future.

  14. Numerical band structure calculations of plasma metamaterials

    NASA Astrophysics Data System (ADS)

    Pederson, Dylan; Kourtzanidis, Konstantinos; Raja, Laxminarayan

    2015-09-01

    Metamaterials (MM) are materials engineered to display negative macroscopic permittivity and permeability. These materials allow for designed control over electromagnetic energy flow, especially at frequencies where natural materials do not interact. Plasmas have recently found application in MM as a negative permittivity component. The permittivity of a plasma depends on its electron density, which can be controlled by an applied field. This means that plasmas can be used in MM to actively control the transmission or reflection of incident waves. This work focuses on a plasma MM geometry in which microplasmas are generated in perforations in a metal plate. We characterizethis material by its band structure, which describes its interaction with incident waves. The plasma-EM interactions are obtained by coupling Maxwell's equations to a simplified plasma momentum equation. A plasma density profile is prescribed, and its effect on the band structure is investigated. The band structure calculations are typically done for static structures, whereas our current density responds to the incident waves. The resulting band structures are compared with experimental results.

  15. Hypothesis testing for band size detection of high-dimensional banded precision matrices.

    PubMed

    An, Baiguo; Guo, Jianhua; Liu, Yufeng

    2014-06-01

    Many statistical analysis procedures require a good estimator for a high-dimensional covariance matrix or its inverse, the precision matrix. When the precision matrix is banded, the Cholesky-based method often yields a good estimator of the precision matrix. One important aspect of this method is determination of the band size of the precision matrix. In practice, crossvalidation is commonly used; however, we show that crossvalidation not only is computationally intensive but can be very unstable. In this paper, we propose a new hypothesis testing procedure to determine the band size in high dimensions. Our proposed test statistic is shown to be asymptotically normal under the null hypothesis, and its theoretical power is studied. Numerical examples demonstrate the effectiveness of our testing procedure.

  16. Test of Weak Equivalence Principle with the Multi-band Timing of the Crab Pulsar

    NASA Astrophysics Data System (ADS)

    Zhang, Yueyang; Gong, Biping

    2017-03-01

    The Weak Equivalent Principle (WEP) can be tested through the parameterized post-Newtonian parameter γ, representing the space curvature produced by unit rest mass. The parameter γ in turn has been constrained by comparing the arrival times of photons originating in distant transient events, such as gamma-ray bursts, fast radio bursts, and giant pulses of pulsars. Those measurements normally correspond to an individual burst event with very limited energy bands and signal-to-noise ratios (S/Ns). In this paper, the discrepancy in the pulse arrival times of the Crab Pulsar between different energy bands is obtained by the phase difference between corresponding pulse profiles. This allows us to compare the pulse arrival times at the largest energy band differences, between radio and optical, radio and X-ray, and radio and gamma-ray respectively. Because the pulse profiles are generated by phase-folding thousands of individual pulses, the time discrepancies between two energy bands are actually measured from thousands of events at each energy band, which corresponds to a much higher S/N. The upper limit of the γ discrepancy set by such an extensively observed and well-modeled source is as follows: {γ }{radio}{--}{γ }γ {- {ray}}< 3.28× {10}-9 at the energy difference of {E}γ {- {ray}}/{E}{radio}˜ {10}13, {γ }{radio}{--}{γ }{{X} - {ray}}< 4.01× {10}-9 at the energy difference of {E}{{X} - {ray}}/{E}{radio}˜ {10}9, {γ }{radio}{--}{γ }{optical}< 2.63× {10}-9 at {E}{optical}/{E}{radio}˜ {10}5, and {γ }{optical}{--}{γ }γ {- {ray}}< 3.03× {10}-10 at {E}γ {- {ray}}/{E}{optical}˜ {10}8. This actually measures the arrival times of freely falling photons in the gravitational field of the Milky Way with the largest amount of events and with data of the highest S/N, which tests WEP at energy band differences that have never been reached before.

  17. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    DOE PAGES

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; ...

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x.more » We present structural and electrical characterization of SrZr xTi 1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  18. Band warping, band non-parabolicity, and Dirac points in electronic and lattice structures

    NASA Astrophysics Data System (ADS)

    Resca, Lorenzo; Mecholsky, Nicholas A.; Pegg, Ian L.

    2017-10-01

    We illustrate at a fundamental level the physical and mathematical origins of band warping and band non-parabolicity in electronic and vibrational structures. We point out a robust presence of pairs of topologically induced Dirac points in a primitive-rectangular lattice using a p-type tight-binding approximation. We analyze two-dimensional primitive-rectangular and square Bravais lattices with implications that are expected to generalize to more complex structures. Band warping is shown to arise at the onset of a singular transition to a crystal lattice with a larger symmetry group, which allows the possibility of irreducible representations of higher dimensions, hence band degeneracy, at special symmetry points in reciprocal space. Band warping is incompatible with a multi-dimensional Taylor series expansion, whereas band non-parabolicities are associated with multi-dimensional Taylor series expansions to all orders. Still band non-parabolicities may merge into band warping at the onset of a larger symmetry group. Remarkably, while still maintaining a clear connection with that merging, band non-parabolicities may produce pairs of conical intersections at relatively low-symmetry points. Apparently, such conical intersections are robustly maintained by global topology requirements, rather than any local symmetry protection. For two p-type tight-binding bands, we find such pairs of conical intersections drifting along the edges of restricted Brillouin zones of primitive-rectangular Bravais lattices as lattice constants vary relatively to each other, until these conical intersections merge into degenerate warped bands at high-symmetry points at the onset of a square lattice. The conical intersections that we found appear to have similar topological characteristics as Dirac points extensively studied in graphene and other topological insulators, even though our conical intersections have none of the symmetry complexity and protection afforded by the latter more

  19. NAD+ administration significantly attenuates synchrotron radiation X-ray-induced DNA damage and structural alterations of rodent testes

    PubMed Central

    Sheng, Caibin; Chen, Heyu; Wang, Ban; Liu, Tengyuan; Hong, Yunyi; Shao, Jiaxiang; He, Xin; Ma, Yingxin; Nie, Hui; Liu, Na; Xia, Weiliang; Ying, Weihai

    2012-01-01

    Synchrotron radiation (SR) X-ray has great potential for its applications in medical imaging and cancer treatment. In order to apply SR X-ray in clinical settings, it is necessary to elucidate the mechanisms underlying the damaging effects of SR X-ray on normal tissues, and to search for the strategies to reduce the detrimental effects of SR X-ray on normal tissues. However, so far there has been little information on these topics. In this study we used the testes of rats as a model to characterize SR X-ray-induced tissue damage, and to test our hypothesis that NAD+ administration can prevent SR X-ray-induced injury of the testes. We first determined the effects of SR X-ray at the doses of 0, 0.5, 1.3, 4 and 40 Gy on the biochemical and structural properties of the testes one day after SR X-ray exposures. We found that 40 Gy of SR X-ray induced a massive increase in double-strand DNA damage, as assessed by both immunostaining and Western blot of phosphorylated H2AX levels, which was significantly decreased by intraperitoneally (i.p.) administered NAD+ at doses of 125 and 625 mg/kg. Forty Gy of SR X-ray can also induce marked increases in abnormal cell nuclei as well as significant decreases in the cell layers of the seminiferous tubules one day after SR X-ray exposures, which were also ameliorated by the NAD+ administration. In summary, our study has shown that SR X-ray can produce both molecular and structural alterations of the testes, which can be significantly attenuated by NAD+ administration. These results have provided not only the first evidence that SR X-ray-induced tissue damage can be ameliorated by certain approaches, but also a valuable basis for elucidating the mechanisms underlying SR X-ray-induced tissue injury. PMID:22518270

  20. Modulating the band structure and sub-bandgap absorption of Co-hyperdoped silicon by co-doping with shallow-level elements

    NASA Astrophysics Data System (ADS)

    Dong, Xiao; Fang, Xiuxiu; Wang, Yongyong; Song, Xiaohui; Lu, Zhansheng

    2018-06-01

    Hyperdoped group-III elements can lower the Fermi energy in the band structures of Co-hyperdoped silicon. When the Co-to-X (X = B, Al, Ga) ratio is 2:1, the intermediate band (IB) in the bandgap includes the Fermi energy and is partially filled by electrons, which is in accordance with the requirement of an IB material. The hyperdoped X atoms can cause the blueshift of the sub-bandgap absorption of the compound compared with the material with no shallow-level elements, which is due to the enlargement of the electronic excitation energy of the Co,X-co-doped silicon.

  1. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

    PubMed Central

    2012-01-01

    A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV. PMID:23046910

  2. Local Bonding Influence on the Band Edge and Band Gap Formation in Quaternary Chalcopyrites.

    PubMed

    Miglio, Anna; Heinrich, Christophe P; Tremel, Wolfgang; Hautier, Geoffroy; Zeier, Wolfgang G

    2017-09-01

    Quaternary chalcopyrites have shown to exhibit tunable band gaps with changing anion composition. Inspired by these observations, the underlying structural and electronic considerations are investigated using a combination of experimentally obtained structural data, molecular orbital considerations, and density functional theory. Within the solid solution Cu 2 ZnGeS 4- x Se x , the anion bond alteration parameter changes, showing larger bond lengths for metal-selenium than for metal-sulfur bonds. The changing bonding interaction directly influences the valence and conduction band edges, which result from antibonding Cu-anion and Ge-anion interactions, respectively. The knowledge of the underlying bonding interactions at the band edges can help design properties of these quaternary chalcopyrites for photovoltaic and thermoelectric applications.

  3. Tunnel optical radiation in In{sub x}Ga{sub 1−x}N

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Alexandrov, Dimiter; Skerget, Shawn

    2014-02-21

    An investigation of tunnel optical radiation in epitaxial layers of n-type In{sub x}Ga{sub 1−x}N grown on p-type GaN by novel plasma based migration enhanced epitaxy is presented. Experimental results of electro-luminescence spectra for In{sub x}Ga{sub 1−x}N/p−GaN hetero-junctions were obtained and they show two well expressed optical bands - one in range 500-540 nm and other in range 550-610 nm. An interesting detail is that each band begins and ends by sharp drops of the radiation, which nearly approach zero. A theoretical investigation of the unusual behavior of these spectra was done using LCAO electron band structure calculations. The optical rangesmore » of these bands show that the radiation occurs in the In{sub x}Ga{sub 1−x}N region. In fact, substitutions of In atoms in Ga sites creates defects in the structure of In{sub x}Ga{sub 1−x}N and the corresponding LCAO matrix elements are found on this basis. The LCAO electron band structures are calculated considering the interactions between nearest-neighbor orbitals. Electron energy pockets are found in both the conduction and the valence bands at the Γ point of the electron band structures. Also it is found that these pockets are separated by distances, for which there is overlapping between the electron wave functions describing localized states belonging to the pockets, and as a result tunnel optical radiation can take place. This type of electron transition - between such a pocket in the conduction band and a pocket in the valence band - occurs in In{sub x}Ga{sub 1−x}N, causing the above described optical bands. This conclusion concurs with the fact that the shapes of these bands change with change of the applied voltage.« less

  4. Late-summer sea ice segmentation with multi-polarisation SAR features in C and X band

    NASA Astrophysics Data System (ADS)

    Fors, Ane S.; Brekke, Camilla; Doulgeris, Anthony P.; Eltoft, Torbjørn; Renner, Angelika H. H.; Gerland, Sebastian

    2016-02-01

    In this study, we investigate the potential of sea ice segmentation by C- and X-band multi-polarisation synthetic aperture radar (SAR) features during late summer. Five high-resolution satellite SAR scenes were recorded in the Fram Strait covering iceberg-fast first-year and old sea ice during a week with air temperatures varying around 0 °C. Sea ice thickness, surface roughness and aerial photographs were collected during a helicopter flight at the site. Six polarimetric SAR features were extracted for each of the scenes. The ability of the individual SAR features to discriminate between sea ice types and their temporal consistency were examined. All SAR features were found to add value to sea ice type discrimination. Relative kurtosis, geometric brightness, cross-polarisation ratio and co-polarisation correlation angle were found to be temporally consistent in the investigated period, while co-polarisation ratio and co-polarisation correlation magnitude were found to be temporally inconsistent. An automatic feature-based segmentation algorithm was tested both for a full SAR feature set and for a reduced SAR feature set limited to temporally consistent features. In C band, the algorithm produced a good late-summer sea ice segmentation, separating the scenes into segments that could be associated with different sea ice types in the next step. The X-band performance was slightly poorer. Excluding temporally inconsistent SAR features improved the segmentation in one of the X-band scenes.

  5. DSN 70-meter antenna X- and S-band calibration. Part 1: Gain measurements

    NASA Technical Reports Server (NTRS)

    Richter, P. H.; Slobin, S. D.

    1989-01-01

    Aperture efficiency measurements made during 1988 on the three 70-m stations (DSS-14, DSS-43, and DSS-63) at X-band (8420 MHz) and S-band (2295 MHz) have been analyzed and reduced to yield best estimates of antenna gain versus elevation. The analysis has been carried out by fitting the gain data to a theoretical expression based on the Ruze formula. Newly derived flux density and source-size correction factors for the natural radio calibration sources used in the measurements have been used in the reduction of the data. Peak gains measured at the three stations were 74.18 (plus or minus 0.10) dBi at X-band, and 63.34 (plus or minus 0.03) dBi at S-band, with corresponding peak aperture efficiencies of 0.687 (plus or minus 0.015) and 0.762 (plus or minus 0.006), respectively. The values quoted assume no atmosphere is present, and the estimated absolute accuracy of the gain measurements is approximately plus or minus 0.2 dB at X-band and plus or minus 0.1 dB at S-band (1-sigma values).

  6. An X-Band SOS Resistive Gate-Insulator-Semiconductor /RIS/ switch

    NASA Astrophysics Data System (ADS)

    Kwok, S. P.

    1980-02-01

    The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB on/off isolation, 1.2-dB insertion loss, and power handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control holding current in both on and off states. The device is compatible with monolithic integrated-circuit technology and thus is suitable for integration into low-cost monolithic phase shifters or other microwave integrated circuits.

  7. Performance analysis of high efficiency InxGa1-xN/GaN intermediate band quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Chowdhury, Injamam Ul Islam; Sarker, Jith; Shifat, A. S. M. Zadid; Shuvro, Rezoan A.; Mitul, Abu Farzan

    2018-06-01

    In this subsistent fifth generation era, InxGa1-xN/GaN based materials have played an imperious role and become promising contestant in the modernistic fabrication technology because of some of their noteworthy attributes. On our way of illustrating the performance, the structure of InxGa1-xN/GaN quantum dot (QD) intermediate band solar cell (IBSC) is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. In comparison with p-n homojunction and heterojunction solar cells, InxGa1-xN/GaN IBQD solar cell manifests larger power conversion efficiency (PCE). PCE strongly depends on position and width of the intermediate bands (IB). Position of IBs can be controlled by tuning the size of QDs and the Indium content of InxGa1-xN whereas, width of IB can be controlled by tuning the interdot distance. PCE can also be controlled by tuning the position of fermi energy bands as well as changing the doping concentration. In this work, maximum conversion efficiency is found approximately 63.2% for a certain QD size, interdot distance, Indium content and doping concentration.

  8. Playback system designed for X-Band SAR

    NASA Astrophysics Data System (ADS)

    Yuquan, Liu; Changyong, Dou

    2014-03-01

    SAR(Synthetic Aperture Radar) has extensive application because it is daylight and weather independent. In particular, X-Band SAR strip map, designed by Institute of Remote Sensing and Digital Earth, Chinese Academy of Sciences, provides high ground resolution images, at the same time it has a large spatial coverage and a short acquisition time, so it is promising in multi-applications. When sudden disaster comes, the emergency situation acquires radar signal data and image as soon as possible, in order to take action to reduce loss and save lives in the first time. This paper summarizes a type of X-Band SAR playback processing system designed for disaster response and scientific needs. It describes SAR data workflow includes the payload data transmission and reception process. Playback processing system completes signal analysis on the original data, providing SAR level 0 products and quick image. Gigabit network promises radar signal transmission efficiency from recorder to calculation unit. Multi-thread parallel computing and ping pong operation can ensure computation speed. Through gigabit network, multi-thread parallel computing and ping pong operation, high speed data transmission and processing meet the SAR radar data playback real time requirement.

  9. Hyperfine rather than spin splittings dominate the fine structure of the B (4)Σ(-)-X (4)Σ(-) bands of AlC.

    PubMed

    Clouthier, Dennis J; Kalume, Aimable

    2016-01-21

    Laser-induced fluorescence and wavelength resolved emission spectra of the B (4)Σ(-)-X (4)Σ(-) band system of the gas phase cold aluminum carbide free radical have been obtained using the pulsed discharge jet technique. The radical was produced by electron bombardment of a precursor mixture of trimethylaluminum in high pressure argon. High resolution spectra show that each rotational line of the 0-0 and 1-1 bands of AlC is split into at least three components, with very similar splittings and intensities in both the P- and R-branches. The observed structure was reproduced by assuming bβS magnetic hyperfine coupling in the excited state, due to a substantial Fermi contact interaction of the unpaired electron in the aluminum 3s orbital. Rotational analysis has yielded ground and excited state equilibrium bond lengths in good agreement with the literature and our own ab initio values. Small discrepancies in the calculated intensities of the hyperfine lines suggest that the upper state spin-spin constant λ' is of the order of ≈ 0.025-0.030 cm(-1).

  10. Structure cristalline du composé Hg3-xSbx(S+Se)2+xI2-x (x ≃ 0.1)

    PubMed Central

    Kars, Mohammed; Herrero, Adrian Gómez; Roisnel, Thierry; Rebbah, Allaoua; Otero-Diáz, L. Carlos

    2016-01-01

    Single crystals of the mercury chalcohalide Hg3-xSbx(S+Se)2+xI2-x (x ≃ 0.1) (mercury anti­mony sulfide selenide iodide), were grown by a chemical transport reaction. The structure contains three independent A (Hg/Sb) atoms; each atom is strongly covalently bonded with two X (Se/S) atoms to form approximately linear X–A–X units. The X–A–X units link to form A 4 X 4 rings, which are combined into infinite crankshaft-type bands running along the [100] direction. Four equatorial E (I/X = Se,S) atoms at relatively long distances complete the distorted octa­hedral coordination of A (Hg/Sb). The crystal under investigation was twinned by non-merohedry with a refined twin domain fraction of 0.814 (6):0.186 (6). The structure is isotypic with Hg3Se2I2 [Beck & Hedderich (2000 ▸). J. Solid State Chem. 151, 73–76], but the current determination reveals a coupled substitution, with partial replacement of Hg+2 by Sb+3, balanced by the equivalent substitution of I−1 by S−2 and Se−2. Bond-valence calculations are consistent with this relative substitution model. PMID:27006793

  11. Pressure-Induced Structural Evolution and Band Gap Shifts of Organometal Halide Perovskite-Based Methylammonium Lead Chloride.

    PubMed

    Wang, Lingrui; Wang, Kai; Xiao, Guanjun; Zeng, Qiaoshi; Zou, Bo

    2016-12-15

    Organometal halide perovskites are promising materials for optoelectronic devices. Further development of these devices requires a deep understanding of their fundamental structure-property relationships. The effect of pressure on the structural evolution and band gap shifts of methylammonium lead chloride (MAPbCl 3 ) was investigated systematically. Synchrotron X-ray diffraction and Raman experiments provided structural information on the shrinkage, tilting distortion, and amorphization of the primitive cubic unit cell. In situ high pressure optical absorption and photoluminescence spectra manifested that the band gap of MAPbCl 3 could be fine-tuned to the ultraviolet region by pressure. The optical changes are correlated with pressure-induced structural evolution of MAPbCl 3 , as evidenced by band gap shifts. Comparisons between Pb-hybrid perovskites and inorganic octahedra provided insights on the effects of halogens on pressure-induced transition sequences of these compounds. Our results improve the understanding of the structural and optical properties of organometal halide perovskites.

  12. Synthesis, Structure, and Optical Properties of Antiperovskite-Derived Ba2MQ3X (M = As, Sb; Q = S, Se; X = Cl, Br, I) Chalcohalides.

    PubMed

    Wang, Ruiqi; Zhang, Xian; He, Jianqiao; Bu, Kejun; Zheng, Chong; Lin, Jianhua; Huang, Fuqiang

    2018-02-05

    Six isostructural antiperovskite-derived chalcohalides, Ba 2 MQ 3 X (M = As, Sb; Q = S, Se; X = Cl, Br, I), crystallizing in the space group Pnma, have been synthesized by solid-state reactions. The crystal structure features a 3D framework with the [XBa 5 ] 9+ disordered square pyramids as building blocks and [MQ 3 ] 3- units filling the interspace. [XBa 5 ] 9+ disordered square pyramids are edge-sharing along [010], derived from the fusing of the two pyramids in octahedral [XBa 6 ] 11+ . Surprisingly, Ba 2 AsS 3 X (X = Cl, Br, I) show almost the same optical band gap of 2.80 eV, and Ba 2 AsSe 3 X (X = Br, I) also have a similar band gap of 2.28 eV. The optical band gap of Ba 2 SbS 3 I is 2.64 eV. First-principles calculations reveal that the optical absorption is attributed to the transitions between Q np at the valence band maximum (VBM) and M np-Q np at the conduction band minimum (CBM). These compounds also possess interesting photoluminescence properties with splitting emission peaks on excitation at 200 nm.

  13. Tunneling calculations for GaAs-Al(x)Ga(1-x)As graded band-gap sawtooth superlattices

    NASA Technical Reports Server (NTRS)

    Forrest, Kathrine; Meijer, Paul H. E.

    1990-01-01

    The transmission resonance spectra and tunneling current-voltage characteristics for direct conduction band electrons in sawtooth GaAs-Al(x)Ga(1-x)As superlattices are computed. Only direct-gap interfaces are considered. It is found that sawtooth superlattices exhibit resonant tunneling similar to that in step superlattices, manifested by correlation of peaks and regions of negative differential resistance in the current-voltage curves with transmission resonances. The Stark shift of the resonances of step-barrier superlattices is a linear function of the field, whereas in sawtooth superlattices under strong fields the shift is not a simple function of the field. This follows from the different ways in which the two structures deform under uniform electric fields: the sawtooth deforms into a staircase, at which field strength all barriers to tunneling are eradicated. The step-barrier superlattice always presents some barrier to tunneling, no matter how high the electric field strength.

  14. Band-gap engineering of La1-x Nd x AlO3 (x = 0, 0.25, 0.50, 0.75, 1) perovskite using density functional theory: A modified Becke Johnson potential study

    NASA Astrophysics Data System (ADS)

    Sandeep; D, P. Rai; A, Shankar; M, P. Ghimire; Anup Pradhan, Sakhya; T, P. Sinha; R, Khenata; S, Bin Omran; R, K. Thapa

    2016-06-01

    The structural, electronic, and magnetic properties of the Nd-doped Rare earth aluminate, La1-x Nd x AlO3 (x = 0% to 100%) alloys are studied using the full potential linearized augmented plane wave (FP-LAPW) method within the density functional theory. The effects of the Nd substitution in LaAlO3 are studied using the supercell calculations. The computed electronic structure with the modified Becke-Johnson (mBJ) potential based approximation indicates that the La1-x Nd x AlO3 alloys may possess half-metallic (HM) behaviors when doped with Nd of a finite density of states at the Fermi level (E F). The direct and indirect band gaps are studied each as a function of x which is the concentration of Nd-doped LaAlO3. The calculated magnetic moments in the La1-x Nd x AlO3 alloys are found to arise mainly from the Nd-4f state. A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at E F. The observed decrease of the band gap with the increase in the concentration of Nd doping in LaAlO3 is a suitable technique for harnessing useful spintronic and magnetic devices. Project supported by the DST-SERB, Dy (Grant No. SERB/3586/2013-14), the UGCBSR, FRPS (Grant No. F.30-52/2014), the UGC (New Delhi, India) Inspire Fellowship DST (India), and the Deanship of Scientific Research at King Saud University (Grant No. RPG-VPP-088). M P Ghimire thanks the Alexander von Humboldt Foundation, Germany for the financial support.

  15. A model for the energy band gap of GaSbxAs1-x and InSbxAs1-x in the whole composition range

    NASA Astrophysics Data System (ADS)

    Zhao, Chuan-Zhen; Ren, He-Yu; Wei, Tong; Wang, Sha-Sha; Wang, Jun

    2018-04-01

    The band gap evolutions of GaSbxAs1-x and InSbxAs1-x in the whole composition range are investigated. It is found that the band gap evolutions of GaSbxAs1-x and InSbxAs1-x are determined by two factors. One is the impurity-host interaction in the As-rich and Sb-rich composition ranges. The other is the intraband coupling within the conduction band and separately within the valence band in the moderate composition range. Based on the band gap evolutions of GaSbxAs1-x and InSbxAs1-x, a model is established. In addition, it is found that the impurity-host interaction is determined by not only the mismatches in size and electronegativity between the introduced atoms in the host material and the anions of the host material, but also the difference in electronegativity between the introduced atoms in the host material and the cations of the host material.

  16. Band crossing in isovalent semiconductor alloys with large size mismatch

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Wei, Su-Huai

    2012-02-01

    Mixing isovalent compounds AC with BC to form alloys A1-xBxC has been an effective way in band structure engineering to enhance the availability of material properties. In most cases, the mixed isovalent atoms A and B, such as Al and Ga in Al1-xGaxAs or As and Sb in GaAs1-xSbx are similar in their atomic sizes and chemical potentials; therefore, the physical properties of A1-xBxC change smoothly from AC to BC. However, in some cases when the chemical and size differences between the isovalent atoms A and B are large, adding a small amount of B to AC or vice versa can lead to a discontinuous change in the electronic band structure. These large size- and chemicalmismatched (LSCM) systems often show unusual and abrupt changes in the alloys' material properties, which provide great potential in material design for novel device applications. In this report, based on first-principles band-structure calculations we show that for LSCM GaAs1-xNx and GaAs1-xBix alloys at the impurity limit the N (Bi)-induced impurity level is above (below) the conduction-(valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

  17. Science Results from the Spaceborne Imaging Radar-C/X-Band Synthetic Aperture Radar (SIR-C/X-SAR): Progress Report

    NASA Technical Reports Server (NTRS)

    Evans, Diane L. (Editor); Plaut, Jeffrey (Editor)

    1996-01-01

    The Spaceborne Imaging Radar-C/X-band Synthetic Aperture Radar (SIR-C/X-SAR) is the most advanced imaging radar system to fly in Earth orbit. Carried in the cargo bay of the Space Shuttle Endeavour in April and October of 1994, SIR-C/X-SAR simultaneously recorded SAR data at three wavelengths (L-, C-, and X-bands; 23.5, 5.8, and 3.1 cm, respectively). The SIR-C/X-SAR Science Team consists of 53 investigator teams from more than a dozen countries. Science investigations were undertaken in the fields of ecology, hydrology, ecology, and oceanography. This report contains 44 investigator team reports and several additional reports from coinvestigators and other researchers.

  18. The Celestial Reference Frame at X/Ka-band (8.4/32 GHz)

    NASA Technical Reports Server (NTRS)

    Jacobs, C. S.; Clark, J. E.; Heflin, M. B.; Skjerve, L. J.; Sovers, O. J.; Garcia-Miro, C.; Moll, V. E.; Horiuchi, S.

    2010-01-01

    A celestial reference frame at X/Kaband (8.4/32 GHz) has been constructed using fiftyone 24-hour sessions with the Deep Space Network. We report on observations which have detected 436 sources covering the full 24 hours of right ascension and declinations down to -45 deg. Comparison of this X/Ka-band frame to the S/X-band (2.3/8.4 GHz) ICRF2 shows wRMS agreement of 200 micro-arcsec ( mu as) in alpha cos delta and 290 mu as in delta. There is evidence for zonal errors at the 100 mu as level. Known errors include limited SNR, lack of phase calibration, troposphere mismodelling, and limited southern geometry. The motivations for extending the ICRF to frequencies above 8 GHz are to access more compact source morphology for improved frame stability, to provide calibrators for phase referencing, and to support spacecraft navigation at Ka-band.

  19. X-ray imaging of water motion during capillary imbibition: A study on how compaction bands impact fluid flow in Bentheim sandstone

    NASA Astrophysics Data System (ADS)

    Pons, A.; David, C.; Fortin, J.; Stanchits, S.; MenéNdez, B.; Mengus, J. M.

    2011-03-01

    To investigate the effect of compaction bands (CB) on fluid flow, capillary imbibition experiments were performed on Bentheim sandstone specimens (initial porosity ˜22.7%) using an industrial X-ray scanner. We used a three-step procedure combining (1) X-ray imaging of capillary rise in intact Bentheim sandstone, (2) formation of compaction band under triaxial tests, at 185 MPa effective pressure, with acoustic emissions (AE) recording for localization of the induced damage, and (3) again X-ray imaging of capillary rise in the damaged specimens after the unloading. The experiments were performed on intact cylindrical specimens, 5 cm in diameter and 10.5 cm in length, cored in different orientations (parallel or perpendicular to the bedding). Analysis of the images obtained at different stages of the capillary imbibition shows that the presence of CB slows down the imbibition and disturbs the geometry of water flow. In addition, we show that the CB geometry derived from X-ray density maps analysis is well correlated with the AE location obtained during triaxial test. The analysis of the water front kinetics was conducted using a simple theoretical model, which allowed us to confirm that compaction bands act as a barrier for fluid flow, not fully impermeable though. We estimate a contrast of permeability of a factor of ˜3 between the host rock and the compaction bands. This estimation of the permeability inside the compaction band is consistent with estimations done in similar sandstones from field studies but differs by 1 order of magnitude from estimations from previous laboratory measurements.

  20. Spectrally resolved localized states in GaAs 1– xBi x

    DOE PAGES

    Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A.; ...

    2017-02-01

    In this study, the role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs 1-xBi x. Here in this work, we present clear spectroscopic observations of recombination at several localized states in GaAs 1-xBi x. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localizedmore » holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs 1-xBi x alloys.« less

  1. The Marvels of Electromagnetic Band Gap (EBG) Structures

    DTIC Science & Technology

    2003-11-01

    terminology of "Electromagnetic conference papers and journal articles dealing with Band- gaps (EBG)". Recently, many researchers the characterizations...Band Gap (EBG) Structures 9 utilized to reduce the mutual coupling between Structures: An FDTD/Prony Technique elements of antenna arrays. based on the...Band- Gap of several patents. He has had pioneering research contributions in diverse areas of electromagnetics,Snteructure", Dymposiget o l 21 IE 48

  2. Electronic properties and bonding in Zr Hx thin films investigated by valence-band x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Magnuson, Martin; Schmidt, Susann; Hultman, Lars; Högberg, Hans

    2017-11-01

    The electronic structure and chemical bonding in reactively magnetron sputtered Zr Hx (x =0.15 , 0.30, 1.16) thin films with oxygen content as low as 0.2 at.% are investigated by 4d valence band, shallow 4p core-level, and 3d core-level x-ray photoelectron spectroscopy. With increasing hydrogen content, we observe significant reduction of the 4d valence states close to the Fermi level as a result of redistribution of intensity toward the H 1s-Zr 4d hybridization region at ˜6 eV below the Fermi level. For low hydrogen content (x =0.15 , 0.30), the films consist of a superposition of hexagonal closest-packed metal (α phase) and understoichiometric δ -Zr Hx (Ca F2 -type structure) phases, while for x =1.16 , the films form single-phase Zr Hx that largely resembles that of stoichiometric δ -Zr H2 phase. We show that the cubic δ -Zr Hx phase is metastable as thin film up to x =1.16 , while for higher H contents the structure is predicted to be tetragonally distorted. For the investigated Zr H1.16 film, we find chemical shifts of 0.68 and 0.51 eV toward higher binding energies for the Zr 4 p3 /2 and 3 d5 /2 peak positions, respectively. Compared to the Zr metal binding energies of 27.26 and 178.87 eV, this signifies a charge transfer from Zr to H atoms. The change in the electronic structure, spectral line shapes, and chemical shifts as a function of hydrogen content is discussed in relation to the charge transfer from Zr to H that affects the conductivity by charge redistribution in the valence band.

  3. Band structures in near spherical 138Ce

    NASA Astrophysics Data System (ADS)

    Bhattacharjee, T.; Chanda, S.; Bhattacharyya, S.; Basu, S. K.; Bhowmik, R. K.; Das, J. J.; Pramanik, U. Datta; Ghugre, S. S.; Madhavan, N.; Mukherjee, A.; Mukherjee, G.; Muralithar, S.; Singh, R. P.

    2009-06-01

    The high spin states of N=80138Ce have been populated in the fusion evaporation reaction 130Te( 12C, 4n) 138Ce at E=65 MeV. The γ transitions belonging to various band structures were detected and characterized using an array of five Clover Germanium detectors. The level scheme has been established up to a maximum spin and excitation energy of 23 ℏ and 9511.3 keV, respectively, by including 53 new transitions. The negative parity ΔI=1 band, developed on the 6536.3 keV 15 level, has been conjectured to be a magnetic rotation band following a semiclassical analysis and comparing the systematics of similar bands in the neighboring nuclei. The said band is proposed to have a four quasiparticle configuration of [πgh]⊗[. Other band structures are interpreted in terms of multi-quasiparticle configurations, based on Total Routhian Surface (TRS) calculations. For the low and medium spin states, a shell model calculation using a realistic two body interaction has been performed using the code OXBASH.

  4. Test of the X(3872) structure in antiproton-nucleus collisions

    NASA Astrophysics Data System (ADS)

    Larionov, Alexei; Strikman, Mark; Bleicher, Marcus

    2016-05-01

    The present day experimental data on the X(3872) decays do not allow us to make clear conclusions about the dominant structure of this state. We discuss here an alternative way to study its structure by means of the two-step D¯* (or D) production in p ¯A reactions. If this process is mediated by X(3872), the characteristic narrow peaks of the D¯* (or D) distributions in the light cone momentum fraction at small transverse momenta will appear. This would unambiguously signal the DD¯* + c.c. molecular composition of the X(3872) state.

  5. Soft X-ray photoemission study of Co2(Cr1-xFex)Ga Heusler compounds

    NASA Astrophysics Data System (ADS)

    Tsunekawa, Masanori; Hattori, Yoshiro; Sekiyama, Akira; Fujiwara, Hidenori; Suga, Shigemasa; Muro, Takayuki; Kanomata, Takeshi; Imada, Shin

    2015-08-01

    We have performed soft X-ray photoemission spectroscopy (SXPES) and X-ray absorption spectroscopy (XAS) of the Co-based Heusler compounds Co2(Cr1-xFex)Ga (x = 0.0, 0.4, and 1.0) in order to study their electronic structures. Band-structure calculation was carried out and compared with the experimental results. SXPES spectra show hν-dependence, revealing the contributions of the Co, Cr, and Fe 3d electronic states in the valence band. The band width observed by the SXPES seems to be narrower than that predicted by the band-structure calculation. XAS spectra depend strongly on the the value of x in Co2(Cr1-xFex)Ga. The electron correlation effects are found to be stronger as x changes from 0.0 to 1.0.

  6. A study on micro-structural and optical parameters of InxSe1-x thin film

    NASA Astrophysics Data System (ADS)

    Patel, P. B.; Desai, H. N.; Dhimmar, J. M.; Modi, B. P.

    2018-04-01

    Thin film of Indium Selenide (InSe) has been deposited by thermal evaporation technique onto pre cleaned glass substrate under high vacuum condition. The micro-structural and optical properties of InxSe1-x (x = 0.6, 1-x = 0.4) thin film have been characterized by X-ray diffractrometer (XRD) and UV-Visible spectrophotometer. The XRD spectra showed that InSe thin film has single phase hexagonal structure with preferred orientation along (1 1 0) direction. The micro-structural parameters (crystallite size, lattice strain, dislocation density, domain population) for InSe thin film have been calculated using XRD spectra. The optical parameters (absorption, transmittance, reflectance, energy band gap, Urbach energy) of InSe thin film have been evaluated from absorption spectra. The direct energy band gap and Urbach energy of InSe thin film is found to be 1.90 eV and 235 meV respectively.

  7. Sleuthing the MSL EDL performance from an X band carrier perspective

    NASA Astrophysics Data System (ADS)

    Oudrhiri, Kamal; Asmar, Sami; Estabrook, Polly; Kahan, Daniel; Mukai, Ryan; Ilott, Peter; Schratz, Brian; Soriano, Melissa; Finley, Susan; Shidner, Jeremy

    During the Entry, Descent, and Landing (EDL) of NASA's Mars Science Laboratory (MSL), or Curiosity, rover to Gale Crater on Mars on August 6, 2012 UTC, the rover transmitted an X-band signal composed of carrier and tone frequencies and a UHF signal modulated with an 8kbps data stream. During EDL, the spacecraft's orientation is determined by its guidance and mechanical subsystems to ensure that the vehicle land safely at its destination. Although orientation to maximize telecom performance is not possible, antennas are especially designed and mounted to provide the best possible line of sight to Earth and to the Mars orbiters supporting MSL's landing. The tones and data transmitted over these links are selected carefully to reflect the most essential parameters of the vehicle's state and the performance of the EDL subsystems for post-EDL reconstruction should no further data transmission from the vehicle be possible. This paper addresses the configuration of the X band receive system used at NASA / JPL's Deep Space Network (DSN) to capture the signal spectrum of MSL's X band carrier and tone signal, examines the MSL vehicle state information obtained from the X band carrier signal only and contrasts the Doppler-derived information against the post-EDL known vehicle state. The paper begins with a description of the MSL EDL sequence of events and discusses the impact of the EDL maneuvers such as guided entry, parachute deploy, and powered descent on the frequency observables expected at the DSN. The range of Doppler dynamics possible is derived from extensive 6 Degrees-Of-Freedom (6 DOF) vehicle state calculations performed by MSL's EDL simulation team. The configuration of the DSN's receive system, using the Radio Science Receivers (RSR) to perform open-loop recording for both for nominal and off-nominal EDL scenarios, is detailed. Expected signal carrier power-to-noise levels during EDL are shown and their impact on signal detection is considered. Particula

  8. Sleuthing the MSL EDL Performance from an X Band Carrier Perspective

    NASA Technical Reports Server (NTRS)

    Oudrhiri, Kamal; Asmar, Sami; Estabrook, Polly; Kahan, Daniel; Mukai, Ryan; Ilott, Peter; Schratz, Brian; Soriano, Melissa; Finley, Susan; Shidner, Jeremy

    2013-01-01

    During the Entry, Descent, and Landing (EDL) of NASA's Mars Science Laboratory (MSL), or Curiosity, rover to Gale Crater on Mars on August 6, 2012 UTC, the rover transmitted an X-band signal composed of carrier and tone frequencies and a UHF signal modulated with an 8kbps data stream. During EDL, the spacecraft's orientation is determined by its guidance and mechanical subsystems to ensure that the vehicle land safely at its destination. Although orientation to maximize telecom performance is not possible, antennas are especially designed and mounted to provide the best possible line of sight to Earth and to the Mars orbiters supporting MSL's landing. The tones and data transmitted over these links are selected carefully to reflect the most essential parameters of the vehicle's state and the performance of the EDL subsystems for post-EDL reconstruction should no further data transmission from the vehicle be possible. This paper addresses the configuration of the X band receive system used at NASA / JPL's Deep Space Network (DSN) to capture the signal spectrum of MSL's X band carrier and tone signal, examines the MSL vehicle state information obtained from the X band carrier signal only and contrasts the Doppler-derived information against the post-EDL known vehicle state. The paper begins with a description of the MSL EDL sequence of events and discusses the impact of the EDL maneuvers such as guided entry, parachute deploy, and powered descent on the frequency observables expected at the DSN. The range of Doppler dynamics possible is derived from extensive 6 Degrees-Of-Freedom (6 DOF) vehicle state calculations performed by MSL's EDL simulation team. The configuration of the DSN's receive system, using the Radio Science Receivers (RSR) to perform open-loop recording for both for nominal and off-nominal EDL scenarios, is detailed. Expected signal carrier power-to-noise levels during EDL are shown and their impact on signal detection is considered. Particular

  9. Superconductivity in layered ZrP2-x Se x with PbFCl-type structure

    NASA Astrophysics Data System (ADS)

    Ishida, Shigeyuki; Fujihisa, Hiroshi; Hase, Izumi; Yanagi, Yousuke; Kawashima, Kenji; Oka, Kunihiko; Gotoh, Yoshito; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi; Kito, Hijiri

    2016-05-01

    We performed a systematic study of the crystal structure, physical properties, and electronic structure of PbFCl-type ZrP2-x Se x (0.3 ≤ x ≤ 0.9). We successfully synthesized single-phase polycrystalline samples for the Se substitution range of 0.4 ≤ x ≤ 0.8. The crystal structure of the compound is characterized by the alternate stacking of a two-dimensional P square net and a Zr-(P1-x Se x ) network. ZrP2-x Se x exhibits a dome-like superconductivity phase diagram and has a maximum superconducting transition temperature (T c) of 6.3 K for x ≈ 0.6. Resistivity and Hall measurements indicated that electron-phonon scattering plays a dominant role and that electron-type carriers dominate charge transport. Specific heat measurements confirmed that ZrP2-x Se x exhibits bulk superconductivity. Further, the value of the specific heat jump at T c (ΔC/γT c ≈ 1.35) is in keeping with the BCS weak-coupling model. These facts suggest a rather conventional pairing mechanism in ZrP2-x Se x . The x dependence of T c can be explained on the basis of the density of states (DOS) for x ≤ 0.7, whereas the decrease in T c with an increase in the DOS for x = 0.8 needs further investigation. One possible reason for the suppression of superconductivity is that the PbFCl-type structure becomes unstable for x ≥ 0.8. The results of electronic structure calculations agree reasonably well with those of the experimental observations, suggesting that the Zrd band plays a primary role in determining the physical properties. Further, the calculations predict a significant change in the Fermi-surface topology for x ≥ 0.8 this is a probable reason for the decrease in T c as well as the instability of the PbFCl-type structure.

  10. Techniques for hot structures testing

    NASA Technical Reports Server (NTRS)

    Deangelis, V. Michael; Fields, Roger A.

    1990-01-01

    Hot structures testing have been going on since the early 1960's beginning with the Mach 6, X-15 airplane. Early hot structures test programs at NASA-Ames-Dryden focused on operational testing required to support the X-15 flight test program, and early hot structures research projects focused on developing lab test techniques to simulate flight thermal profiles. More recent efforts involved numerous large and small hot structures test programs that served to develop test methods and measurement techniques to provide data that promoted the correlation of test data with results from analytical codes. In Nov. 1988 a workshop was sponsored that focused on the correlation of hot structures test data with analysis. Limited material is drawn from the workshop and a more formal documentation is provided of topics that focus on hot structures test techniques used at NASA-Ames-Dryden. Topics covered include the data acquisition and control of testing, the quartz lamp heater systems, current strain and temperature sensors, and hot structures test techniques used to simulate the flight thermal environment in the lab.

  11. Room Temperature Thin Film Ba(x)Sr(1-x)TiO3 Ku-Band Coupled MicrostripPhase Shifters: Effects of Film Thickness, Doping, Annealing and Substrate Choice

    NASA Technical Reports Server (NTRS)

    VanKeuls, F. W.; Mueller, C. H.; Miranda, F. A.; Romanofsky, R. R.; Canedy, C. L.; Aggarwal, S.; Venkatesan, T.; Ramesh, R.; Horwitz, S.; Chang, W.

    1999-01-01

    We report on measurements taken on over twenty Ku-band coupled microstrip phase shifters (CMPS) using thin ferroelectric films of Ba(x)Sr(1-x)TiO3. This CMPS design is a recent innovation designed to take advantage of the high tunability and tolerate the high dielectric constant of ferroelectric films at Ku- and K-band frequencies. These devices are envisioned as a component in low-cost steerable beam phased area antennas, Comparisons are made between devices with differing film thickness, annealed vs unannealed, Mn-doped vs. undoped, and also substrates of LaAlO3 and MgO. A comparison between the CMPS structure and a CPW phase shifter was also made oil the same ferroelectric film.

  12. U.S. Aeronautical L-Band Satellite Technology Test Program : Interim Tests Results

    DOT National Transportation Integrated Search

    1975-06-01

    The U.S. Aeronautical L-Band satellite test program was performed between September 1974 and April 1975 as part of an international ATS-6 L-Band satellite test program. The U.S. program consisted of both technology and ATC communications demonstratio...

  13. 950 keV X-Band Linac For Material Recognition Using Two-Fold Scintillator Detector As A Concept Of Dual-Energy X-Ray System

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Kiwoo; Natsui, Takuya; Hirai, Shunsuke

    2011-06-01

    One of the advantages of applying X-band linear accelerator (Linac) is the compact size of the whole system. That shows us the possibility of on-site system such as the custom inspection system in an airport. As X-ray source, we have developed X-band Linac and achieved maximum X-ray energy 950 keV using the low power magnetron (250 kW) in 2 {mu}s pulse length. The whole size of the Linac system is 1x1x1 m{sup 3}. That is realized by introducing X-band system. In addition, we have designed two-fold scintillator detector in dual energy X-ray concept. Monte carlo N-particle transport (MCNP) code wasmore » used to make up sensor part of the design with two scintillators, CsI and CdWO4. The custom inspection system is composed of two equipments: 950 keV X-band Linac and two-fold scintillator and they are operated simulating real situation such as baggage check in an airport. We will show you the results of experiment which was performed with metal samples: iron and lead as targets in several conditions.« less

  14. Detecting forest structure and biomass with C-band multipolarization radar - Physical model and field tests

    NASA Technical Reports Server (NTRS)

    Westman, Walter E.; Paris, Jack F.

    1987-01-01

    The ability of C-band radar (4.75 GHz) to discriminate features of forest structure, including biomass, is tested using a truck-mounted scatterometer for field tests on a 1.5-3.0 m pygmy forest of cypress (Cupressus pygmaea) and pine (Pinus contorta ssp, Bolanderi) near Mendocino, CA. In all, 31 structural variables of the forest are quantified at seven sites. Also measured was the backscatter from a life-sized physical model of the pygmy forest, composed of nine wooden trees with 'leafy branches' of sponge-wrapped dowels. This model enabled independent testing of the effects of stem, branch, and leafy branch biomass, branch angle, and moisture content on radar backscatter. Field results suggested that surface area of leaves played a greater role in leaf scattering properties than leaf biomass per se. Tree leaf area index was strongly correlated with vertically polarized power backscatter (r = 0.94; P less than 0.01). Field results suggested that the scattering role of leaf water is enhanced as leaf surface area per unit leaf mass increases; i.e., as the moist scattering surfaces become more dispersed. Fog condensate caused a measurable rise in forest backscatter, both from surface and internal rises in water content. Tree branch mass per unit area was highly correlated with cross-polarized backscatter in the field (r = 0.93; P less than 0.01), a result also seen in the physical model.

  15. Combined observations of Arctic sea ice with near-coincident colocated X-band, C-band, and L-band SAR satellite remote sensing and helicopter-borne measurements

    NASA Astrophysics Data System (ADS)

    Johansson, A. M.; King, J. A.; Doulgeris, A. P.; Gerland, S.; Singha, S.; Spreen, G.; Busche, T.

    2017-01-01

    In this study, we compare colocated near-coincident X-, C-, and L-band fully polarimetry SAR satellite images with helicopter-borne ice thickness measurements acquired during the Norwegian Young sea ICE 2015 (N-ICE2015) expedition in the region of the Arctic Ocean north of Svalbard in April 2015. The air-borne surveys provide near-coincident snow plus ice thickness, surface roughness data, and photographs. This unique data set allows us to investigate how the different frequencies can complement one another for sea ice studies, but also to raise awareness of limitations. X-band and L-band satellite scenes were shown to be a useful complement to the standard SAR frequency for sea ice monitoring (C-band) for lead ice and newly formed sea ice identification. This may be in part be due to the frequency but also the high spatial resolution of these sensors. We found a relatively low correlation between snow plus ice thickness and surface roughness. Therefore, in our dataset ice thickness cannot directly be observed by SAR which has important implications for operational ice charting based on automatic segmentation.

  16. Design and experiment of a directional coupler for X-band long pulse high power microwaves.

    PubMed

    Bai, Zhen; Li, Guolin; Zhang, Jun; Jin, Zhenxing

    2013-03-01

    Higher power and longer pulse are the trend of the development of high power microwave (HPM), and then some problems emerge in measuring the power of HPM because rf breakdown is easier to occur under the circumstance of high power (the level of gigawatt) and long pulse (about 100 ns). In order to measure the power of the dominant TM₀₁ mode of an X-band long pulse overmoded HPM source, a directional coupler with stable coupling coefficient, high directivity, and high power handling capacity in wide band is investigated numerically and experimentally. At the central frequency 9.4 GHz, the simulation results show that the coupling coefficient is -59.6 dB with the directivity of 35 dB and the power handling capacity of 2 GW. The coupling coefficient is calibrated to be accordant with the simulation results. The high power tests are performed on an X-band long pulse HPM source, whose output mode is mainly TM₀₁ mode, and the results show that the measured power and waveform of the directional coupler have a good consistency with the far-field measuring results.

  17. Structural and electronic properties of GaN nanowires with embedded In{sub x}Ga{sub 1−x}N nanodisks

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kioseoglou, J., E-mail: sifisl@auth.gr; Pavloudis, Th.; Kehagias, Th.

    2015-07-21

    In the present study, the effects of various types of strain and indium concentration on the total energy and optoelectronic properties of GaN nanowires (NWs) with embedded In{sub x}Ga{sub 1−x}N nanodisks (NDs) are examined. In particular, the bi-axial, hydrostatic, and uniaxial strain states of the embedded In{sub x}Ga{sub 1−x}N NDs are investigated for multiple In concentrations. Density functional theory is employed to calculate the band structure of the NWs. The theoretical analysis finds that the supercell-size-dependent characteristics calculated for our 972-atom NW models are very close to the infinite supercell-size limit. It is established that the embedded In{sub x}Ga{sub 1−x}Nmore » NDs do not induce deep states in the band gap of the NWs. A bowing parameter of 1.82 eV is derived from our analysis in the quadratic Vegard's formula for the band gaps at the various In concentrations of the investigated In{sub x}Ga{sub 1−x}N NDs in GaN NW structures. It is concluded that up to ∼10% of In, the hydrostatic strain state is competitive with the bi-axial due to the radial absorption of the strain on the surfaces. Above this value, the dominant strain state is the bi-axial one. Thus, hydrostatic and bi-axial strain components coexist in the embedded NDs, and they are of different physical origin. The bi-axial strain comes from growth on lattice mismatched substrates, while the hydrostatic strain originates from the lateral relaxation of the surfaces.« less

  18. Structural, electronic, magnetic and optical properties of semiconductor Zn1-xMoxTe compound

    NASA Astrophysics Data System (ADS)

    Feng, Zhong-Ying; Zhang, Jian-Min

    2018-03-01

    The structural, electronic, magnetic and optical properties of the Zn1-xMoxTe (x = 0.00, 0.25, 0.50, 0.75, 1.00) have been investigated by the spin-polarized first-principles calculations. The Zn0.50Mo0.50Te has tetragonal structure while the Zn1-xMoxTe (x = 0.00, 0.25, 0.75, 1.00) crystallize in cubic structures. For Zn1-xMoxTe (x = 0.25, 0.50, 0.75, 1.00) alloys, the lattice constant and the volume are found larger than those of pure ZnTe alloy. The Zn1-xMoxTe (x = 0.25, 0.50, 0.75, 1.00) is magnetic and the Mo element is found dominant in the bands crossing the Fermi level in the spin-up channel. The Zn0.75Mo0.25Te and MoTe have half-metallic (HM) behavior. In spin-down channel of the Zn0.75Mo0.25Te, the Zn atom mainly contributed to the conduction band minimum (CBM), while the valence band maximum (VBM) appears mainly due to contribution of Te element. A positive spin splitting and crystal field splitting of d-states of Mo atom has been observed for Zn0.75Mo0.25Te alloy. The maximum values of the absorption coefficients αMAX(ω) of the Zn0.50Mo0.50Te alloy along a or b axes are smaller than the absorption coefficient along c axis. The first absorption peak appearing in the energy range of 0.000-1.000 eV for Zn1-xMoxTe (x = 0.25, 0.50, 0.75 or 1.00) alloys is the new peak which is not observed in ZnTe.

  19. Flood Monitoring using X-band Dual-polarization Radar Network

    NASA Astrophysics Data System (ADS)

    Chandrasekar, V.; Wang, Y.; Maki, M.; Nakane, K.

    2009-09-01

    sensitivity and fast temporal update across the coverage. Strong clutter is expected from buildings in the neighborhood which act as perfect reflectors. The reduction in radar size enables flexible deployment, such as rooftop installation, with small infrastructure requirement, which is critical in a metropolitan region. Dual-polarization based technologies can be implemented for real-time mitigation of rain attenuations and accurate estimation of rainfall. The NSF Engineering Research Center for Collaborative Adaptive Sensing of the Atmosphere (CASA) is developing the technologies and the systems for network centric weather observation. The Differential propagation phase (Kdp) has higher sensitivity at X-band compared to S and C band. It is attractive to use Kdp to derive Quantitative Precipitation Estimation (QPE) because it is immune to rain attenuation, calibration biases, partial beam blockage, and hail contamination. Despite the advantage of Kdp for radar QPE, the estimation of Kdp itself is a challenge as the range derivative of the differential propagation phase profiles. An adaptive Kdp algorithm was implemented in the CASA IP1 testbed that substantially reduces the fluctuation in light rain and the bias at heavy rain. The Kdp estimation also benefits from the higher resolution in the IP1 radar network. The performance of the IP1 QPE product was evaluated for all major rain events against the USDA Agriculture Research Service's gauge network (MicroNet) in the Little Washita watershed, which comprises 20 weather stations in the center of the test bed. The cross-comparison with gauge measurements shows excellent agreement for the storm events during the Spring Experiments of 2007 and 2008. The hourly rainfall estimates compared to the gauge measurements have a very small bias of few percent and a normalized standard error of 21%. The IP1 testbed was designed with overlapping coverage among its radar nodes. The study area is covered by multiple radars and the aspect of

  20. Intrinsic properties of high-spin band structures in triaxial nuclei

    NASA Astrophysics Data System (ADS)

    Jehangir, S.; Bhat, G. H.; Sheikh, J. A.; Palit, R.; Ganai, P. A.

    2017-12-01

    The band structures of 68,70Ge, 128,130,132,134Ce and 132,134,136,138Nd are investigated using the triaxial projected shell model (TPSM) approach. These nuclei depict forking of the ground-state band into several s-bands and in some cases, both the lowest two observed s-bands depict neutron or proton character. It was discussed in our earlier work that this anomalous behaviour can be explained by considering γ-bands based on two-quasiparticle configurations. As the parent band and the γ-band built on it have the same intrinsic structure, g-factors of the two bands are expected to be similar. In the present work, we have undertaken a detailed investigation of g-factors for the excited band structures of the studied nuclei and the available data for a few high-spin states are shown to be in fair agreement with the predicted values.

  1. Broadening of effective photonic band gaps in biological chiral structures: From intrinsic narrow band gaps to broad band reflection spectra

    NASA Astrophysics Data System (ADS)

    Vargas, W. E.; Hernández-Jiménez, M.; Libby, E.; Azofeifa, D. E.; Solis, Á.; Barboza-Aguilar, C.

    2015-09-01

    Under normal illumination with non-polarized light, reflection spectra of the cuticle of golden-like and red Chrysina aurigans scarabs show a structured broad band of left-handed circularly polarized light. The polarization of the reflected light is attributed to a Bouligand-type left-handed chiral structure found through the scarab's cuticle. By considering these twisted structures as one-dimensional photonic crystals, a novel approach is developed from the dispersion relation of circularly polarized electromagnetic waves traveling through chiral media, to show how the broad band characterizing these spectra arises from an intrinsic narrow photonic band gap whose spectral position moves through visible and near-infrared wavelengths.

  2. Direct Band Gap Gallium Antimony Phosphide (GaSbxP1−x) Alloys

    PubMed Central

    Russell, H. B.; Andriotis, A. N.; Menon, M.; Jasinski, J. B.; Martinez-Garcia, A.; Sunkara, M. K.

    2016-01-01

    Here, we report direct band gap transition for Gallium Phosphide (GaP) when alloyed with just 1–2 at% antimony (Sb) utilizing both density functional theory based computations and experiments. First principles density functional theory calculations of GaSbxP1−x alloys in a 216 atom supercell configuration indicate that an indirect to direct band gap transition occurs at x = 0.0092 or higher Sb incorporation into GaSbxP1−x. Furthermore, these calculations indicate band edge straddling of the hydrogen evolution and oxygen evolution reactions for compositions ranging from x = 0.0092 Sb up to at least x = 0.065 Sb making it a candidate for use in a Schottky type photoelectrochemical water splitting device. GaSbxP1−x nanowires were synthesized by reactive transport utilizing a microwave plasma discharge with average compositions ranging from x = 0.06 to x = 0.12 Sb and direct band gaps between 2.21 eV and 1.33 eV. Photoelectrochemical experiments show that the material is photoactive with p-type conductivity. This study brings attention to a relatively uninvestigated, tunable band gap semiconductor system with tremendous potential in many fields. PMID:26860470

  3. Measurements and Simulations of Nadir-Viewing Radar Returns from the Melting Layer at X- and W-Bands

    NASA Technical Reports Server (NTRS)

    Liao, Liang; Meneghini, Robert; Tian, Lin; Heymsfield, Gerald M.

    2010-01-01

    Simulated radar signatures within the melting layer in stratiform rain, namely the radar bright band, are checked by means of comparisons with simultaneous measurements of the bright band made by the EDOP (X-band) and CRS (W-band) airborne Doppler radars during the CRYSTAL-FACE campaign in 2002. A stratified-sphere model, allowing the fractional water content to vary along the radius of the particle, is used to compute the scattering properties of individual melting snowflakes. Using the effective dielectric constants computed by the conjugate gradient-fast Fourier transform (CGFFT) numerical method for X and W bands, and expressing the fractional water content of melting particle as an exponential function in particle radius, it is found that at X band the simulated radar bright-band profiles are in an excellent agreement with the measured profiles. It is also found that the simulated W-band profiles usually resemble the shapes of the measured bright-band profiles even though persistent offsets between them are present. These offsets, however, can be explained by the attenuation caused by cloud water and water vapor at W band. This is confirmed by the comparisons of the radar profiles made in the rain regions where the un-attenuated W-band reflectivity profiles can be estimated through the X- and W band Doppler velocity measurements. The bright-band model described in this paper has the potential to be used effectively for both radar and radiometer algorithms relevant to the TRMM and GPM satellite missions.

  4. Band connectivity for topological quantum chemistry: Band structures as a graph theory problem

    NASA Astrophysics Data System (ADS)

    Bradlyn, Barry; Elcoro, L.; Vergniory, M. G.; Cano, Jennifer; Wang, Zhijun; Felser, C.; Aroyo, M. I.; Bernevig, B. Andrei

    2018-01-01

    The conventional theory of solids is well suited to describing band structures locally near isolated points in momentum space, but struggles to capture the full, global picture necessary for understanding topological phenomena. In part of a recent paper [B. Bradlyn et al., Nature (London) 547, 298 (2017), 10.1038/nature23268], we have introduced the way to overcome this difficulty by formulating the problem of sewing together many disconnected local k .p band structures across the Brillouin zone in terms of graph theory. In this paper, we give the details of our full theoretical construction. We show that crystal symmetries strongly constrain the allowed connectivities of energy bands, and we employ graph theoretic techniques such as graph connectivity to enumerate all the solutions to these constraints. The tools of graph theory allow us to identify disconnected groups of bands in these solutions, and so identify topologically distinct insulating phases.

  5. Synthesis, Crystal and Electronic Structures, and Optical Properties of (CH 3NH 3) 2CdX 4 (X = Cl, Br, I)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Roccanova, Rachel; Ming, Wenmei; Whiteside, Vincent R.

    Here, we report the synthesis, crystal and electronic structures, as well as optical properties of the hybrid organic–inorganic compounds MA 2CdX 4 (MA = CH 3NH 3; X = Cl, Br, I). MA 2CdI 4 is a new compound, whereas, for MA 2CdCl 4 and MA 2CdBr 4, structural investigations have already been conducted but electronic structures and optical properties are reported here for the first time. Single crystals were grown through slow evaporation of MA 2CdX 4 solutions with optimized conditions yielding mm-sized colorless (X = Cl, Br) and pale yellow (X = I) crystals. Single crystal and variablemore » temperature powder X-ray diffraction measurements suggest that MA 2CdCl 4 forms a 2D layered perovskite structure and has two structural transitions at 283 and 173 K. In contrast, MA 2CdBr 4 and MA 2CdI 4 adopt 0D K 2SO 4-derived crystal structures based on isolated CdX 4 tetrahedra and show no phase transitions down to 20 K. The contrasting crystal structures and chemical compositions in the MA 2CdX 4 family impact their air stabilities, investigated for the first time in this work; MA 2CdCl 4 is air-stable, whereas MA 2CdBr 4 and MA 2CdI 4 partially decompose when left in air. Optical absorption measurements suggest that MA 2CdX 4 have large optical band gaps above 3.9 eV. Room temperature photoluminescence spectra of MA 2CdX 4 yield broad peaks in the 375–955 nm range with full width at half-maximum values up to 208 nm. These PL peaks are tentatively assigned to self-trapped excitons in MA 2CdX 4 following the crystal and electronic structure considerations. The bands around the Fermi level have small dispersions, which is indicative of high charge localization with significant exciton binding energies in MA 2CdX 4. On the basis of our combined experimental and computational results, MA 2CdX 4 and related compounds may be of interest for white-light-emitting phosphors and scintillator applications.« less

  6. Synthesis, Crystal and Electronic Structures, and Optical Properties of (CH 3NH 3) 2CdX 4 (X = Cl, Br, I)

    DOE PAGES

    Roccanova, Rachel; Ming, Wenmei; Whiteside, Vincent R.; ...

    2017-11-02

    Here, we report the synthesis, crystal and electronic structures, as well as optical properties of the hybrid organic–inorganic compounds MA 2CdX 4 (MA = CH 3NH 3; X = Cl, Br, I). MA 2CdI 4 is a new compound, whereas, for MA 2CdCl 4 and MA 2CdBr 4, structural investigations have already been conducted but electronic structures and optical properties are reported here for the first time. Single crystals were grown through slow evaporation of MA 2CdX 4 solutions with optimized conditions yielding mm-sized colorless (X = Cl, Br) and pale yellow (X = I) crystals. Single crystal and variablemore » temperature powder X-ray diffraction measurements suggest that MA 2CdCl 4 forms a 2D layered perovskite structure and has two structural transitions at 283 and 173 K. In contrast, MA 2CdBr 4 and MA 2CdI 4 adopt 0D K 2SO 4-derived crystal structures based on isolated CdX 4 tetrahedra and show no phase transitions down to 20 K. The contrasting crystal structures and chemical compositions in the MA 2CdX 4 family impact their air stabilities, investigated for the first time in this work; MA 2CdCl 4 is air-stable, whereas MA 2CdBr 4 and MA 2CdI 4 partially decompose when left in air. Optical absorption measurements suggest that MA 2CdX 4 have large optical band gaps above 3.9 eV. Room temperature photoluminescence spectra of MA 2CdX 4 yield broad peaks in the 375–955 nm range with full width at half-maximum values up to 208 nm. These PL peaks are tentatively assigned to self-trapped excitons in MA 2CdX 4 following the crystal and electronic structure considerations. The bands around the Fermi level have small dispersions, which is indicative of high charge localization with significant exciton binding energies in MA 2CdX 4. On the basis of our combined experimental and computational results, MA 2CdX 4 and related compounds may be of interest for white-light-emitting phosphors and scintillator applications.« less

  7. Design concepts and performance of NASA X-band transponder (DST) for deep space spacecraft applications

    NASA Technical Reports Server (NTRS)

    Mysoor, Narayan R.; Perret, Jonathan D.; Kermode, Arthur W.

    1991-01-01

    The design concepts and measured performance characteristics of an X band (7162 MHz/8415 MHz) breadboard deep space transponder (DST) for future spacecraft applications, with the first use scheduled for the Comet Rendezvous Asteroid Flyby (CRAF) and Cassini missions in 1995 and 1996, respectively. The DST consists of a double conversion, superheterodyne, automatic phase tracking receiver, and an X band (8415 MHz) exciter to drive redundant downlink power amplifiers. The receiver acquires and coherently phase tracks the modulated or unmodulated X band (7162 MHz) uplink carrier signal. The exciter phase modulates the X band (8415 MHz) downlink signal with composite telemetry and ranging signals. The receiver measured tracking threshold, automatic gain control static phase error, and phase jitter characteristics of the breadboard DST are in good agreement with the expected performance. The measured results show a receiver tracking threshold of -158 dBm and a dynamic signal range of 88 dB.

  8. Observations of Heavy Rainfall in a Post Wildland Fire Area Using X-Band Polarimetric Radar

    NASA Astrophysics Data System (ADS)

    Cifelli, R.; Matrosov, S. Y.; Gochis, D. J.; Kennedy, P.; Moody, J. A.

    2011-12-01

    Polarimetric X-band radar systems have been used increasingly over the last decade for rainfall measurements. Since X-band radar systems are generally less costly, more mobile, and have narrower beam widths (for same antenna sizes) than those operating at lower frequencies (e.g., C and S-bands), they can be used for the "gap-filling" purposes for the areas when high resolution rainfall measurements are needed and existing operational radars systems lack adequate coverage and/or resolution for accurate quantitative precipitation estimation (QPE). The main drawback of X-band systems is attenuation of radar signals, which is significantly stronger compared to frequencies used by "traditional" precipitation radars operating at lower frequencies. The use of different correction schemes based on polarimetric data can, to a certain degree, overcome this drawback when attenuation does not cause total signal extinction. This presentation will focus on examining the use of high-resolution data from the NOAA Earth System Research Laboratory (ESRL) mobile X-band dual polarimetric radar for the purpose of estimating precipitation in a post-wildland fire area. The NOAA radar was deployed in the summer of 2011 to examine the impact of gap-fill radar on QPE and the resulting hydrologic response during heavy rain events in the Colorado Front Range in collaboration with colleagues from the National Center for Atmospheric Research (NCAR), Colorado State University (CSU), and the U.S. Geological Survey (USGS). A network of rain gauges installed by NCAR, the Denver Urban Drainage Flood Control District (UDFCD), and the USGS are used to compare with the radar estimates. Supplemental data from NEXRAD and the CSU-CHILL dual polarimetric radar are also used to compare with the NOAA X-band and rain gauges. It will be shown that rainfall rates and accumulations estimated from specific differential phase measurements (KDP) at X-band are in good agreement with the measurements from the gauge

  9. An X-band spacecraft transponder for deep space applications - Design concepts and breadboard performance

    NASA Technical Reports Server (NTRS)

    Mysoor, Narayan R.; Perret, Jonathan D.; Kermode, Arthur W.

    1992-01-01

    The design concepts and measured performance characteristics are summarized of an X band (7162 MHz/8415 MHz) breadboard deep space transponder (DSP) for future spacecraft applications, with the first use scheduled for the Comet Rendezvous Asteroid Flyby (CRAF) and Cassini missions in 1995 and 1996, respectively. The DST consists of a double conversion, superheterodyne, automatic phase tracking receiver, and an X band (8415 MHz) exciter to drive redundant downlink power amplifiers. The receiver acquires and coherently phase tracks the modulated or unmodulated X band (7162 MHz) uplink carrier signal. The exciter phase modulates the band (8415 MHz) downlink signal with composite telemetry and ranging signals. The receiver measured tracking threshold, automatic gain control, static phase error, and phase jitter characteristics of the breadboard DST are in good agreement with the expected performance. The measured results show a receiver tracking threshold of -158 dBm and a dynamic signal range of 88 dB.

  10. Dual-band quantum well infrared photodetector with metallic structure

    NASA Astrophysics Data System (ADS)

    Wu, Yang; Liu, Hongmei; Li, Pingzhou

    2018-02-01

    The quantum efficiency of the dual bands quantum well infrared photodetectors(QWIP) has been widely concerned in recent years. A novel structure for the dual-band quantum well infrared detectors which is based on GaAs/AlGaAs designed in this paper is aimed to improve the absorption efficiency. The structure replaces the conventional grating with a metallic grating based on surface plasmon polaritons(SPPS), and we further insert a metal structure in the periodic quantum well layer. The simulation result shows that the use of the different shapes of the metal holes can remarkably improve the optical coupling efficiency due to the surface plasmon effect. By optimizing parameters of the structure, it can work in the dual infrared bands of 3-5um and 8-12um. Moreover, the absorption rate increased by 20% compared with traditional structure of Dual-band QWIP.

  11. Multi-band Electronic Structure of Ferromagnetic CeRuPO

    NASA Astrophysics Data System (ADS)

    Takahashi, Masaya; Ootsuki, Daiki; Horio, Masafumi; Arita, Masashi; Namatame, Hirofumi; Taniguchi, Masaki; Saini, Naurang L.; Sugawara, Hitoshi; Mizokawa, Takashi

    2018-04-01

    We have studied the multi-band electronic structure of ferromagnetic CeRuPO (TC = 15 K) by means of angle-resolved photoemission spectroscopy (ARPES). The ARPES results show that three hole bands exist around the zone center and two of them cross the Fermi level (EF). Around the zone corner, two electron bands are observed and cross EF. These hole and electron bands, which can be assigned to the Ru 4d bands, are basically consistent with the band-structure calculation including their orbital characters. However, one of the electron bands with Ru 4d 3z2 - r2 character is strongly renormalized indicating correlation effect due to hybridization with the Ce 4f orbitals. The Ru 4d 3z2 - r2 band changes across TC suggesting that the out-of-plane 3z2 - r2 orbital channel plays essential roles in the ferromagnetism.

  12. Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Ramdas, A.; Su, Ching-Hua; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between

  13. Band Structure Characteristics of Nacreous Composite Materials with Various Defects

    NASA Astrophysics Data System (ADS)

    Yin, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.

    2016-06-01

    Nacreous composite materials have excellent mechanical properties, such as high strength, high toughness, and wide phononic band gap. In order to research band structure characteristics of nacreous composite materials with various defects, supercell models with the Brick-and-Mortar microstructure are considered. An efficient multi-level substructure algorithm is employed to discuss the band structure. Furthermore, two common systems with point and line defects and varied material parameters are discussed. In addition, band structures concerning straight and deflected crack defects are calculated by changing the shear modulus of the mortar. Finally, the sensitivity of band structures to the random material distribution is presented by considering different volume ratios of the brick. The results reveal that the first band gap of a nacreous composite material is insensitive to defects under certain conditions. It will be of great value to the design and synthesis of new nacreous composite materials for better dynamic properties.

  14. Electronic structure and optical properties of iron based chalcogenide FeX2 (X = S, Se, Te) for photovoltaic applications: a first principle study

    NASA Astrophysics Data System (ADS)

    Ghosh, Anima; Thangavel, R.

    2017-11-01

    In present work, the electronic structure and optical properties of the FeX2 (X = S, Se, Te) compounds have been evaluated by the density functional theory based on the scalar-relativistic full potential linear augmented plane wave method via Wien2K. From the total energy calculations, it has been found that all the compounds have direct band nature, which determined by iron 3 d states at valance band edge and anion p dominated at conduction band at Γ-point and the fundamental band gap between the valence band and conduction band are estimated 1.40, 1.02 and 0.88 eV respectively with scissor correction for FeS2, FeSe2 and FeTe2 which are close to the experimental values. The optical properties such as dielectric tensor components and the absorption coefficient of these materials are determined in order to investigate their usefulness in photovoltaic applications.

  15. Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure

    NASA Astrophysics Data System (ADS)

    Li, Jian; Han, Xiuxun; Dong, Chen; Fan, Changzeng

    2017-12-01

    Using first-principles total energy calculations, we have studied the structural, mechanical and electronic properties of GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (with x from 0 to 1) within density functional theory (DFT) framework. To obtain the ideal band gap, we employ the semi-empirical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U). The calculated results illustrate the varying lattice constants and band gap in GaAs1-xNx alloys as functions of the nitrogen concentration x. According to the pressure dependence of the lattice constants and volume, the higher N concentration alloy exhibits the better anti-compressibility. In addition, an increasing band gap is predicted under 20 GPa pressure for GaAs1-xNx alloys.

  16. Design of 140 MW X-band Relativistic Klystron for Linear Collider

    NASA Astrophysics Data System (ADS)

    Dolbilov, G. V.; Azorsky, N. I.; Shvetsov, V. S.; Balakin, V. E.; Avrakhov, P. V.; Kazakov, S. Yu.; Teryaev, V. E.; Vogel, V. F.

    1997-05-01

    It has been reported at EPAC-96 on successful experimental results on achievement of 100 MW output rf power in a wide aperture (15 mm), high gain (80 dB) 14 GHz VLEPP klystron with distributed suppression of parasitic oscillations (G.V. Dolbilov et al., Proc. EPAC-96, Sitges (Barselona), 10-14 June, 1996, Vol. 3, p. 2143). This report presents design of an electrodynamic structure of the X-band klystron for linear collider with a higher efficiency up to 56 % which will be achieved at the same parameters of the electron beam (U = 1 MeV, I = 250 A, emittance 0.05 π cm\\cdotrad). Design rf output power of the klystron is 140 MW. Experimental investigations of electrodynamic structure of the klystron are planned to perform using the driving beam of the JINR LIA-3000 induction accelerator (E = 1 MeV, I = 250 A, τ = 250 ns).

  17. Bi-directional evolutionary optimization for photonic band gap structures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Meng, Fei; School of Civil Engineering, Central South University, Changsha 410075; Huang, Xiaodong, E-mail: huang.xiaodong@rmit.edu.au

    2015-12-01

    Toward an efficient and easy-implement optimization for photonic band gap structures, this paper extends the bi-directional evolutionary structural optimization (BESO) method for maximizing photonic band gaps. Photonic crystals are assumed to be periodically composed of two dielectric materials with the different permittivity. Based on the finite element analysis and sensitivity analysis, BESO starts from a simple initial design without any band gap and gradually re-distributes dielectric materials within the unit cell so that the resulting photonic crystal possesses a maximum band gap between two specified adjacent bands. Numerical examples demonstrated the proposed optimization algorithm can successfully obtain the band gapsmore » from the first to the tenth band for both transverse magnetic and electric polarizations. Some optimized photonic crystals exhibit novel patterns markedly different from traditional designs of photonic crystals.« less

  18. Structural and optical properties of Sb65Se35-xGex thin films

    NASA Astrophysics Data System (ADS)

    Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

    2011-07-01

    Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

  19. Mini-RF S- and X-band Bistatic Observations of the Floor of Cabeus Crater

    NASA Astrophysics Data System (ADS)

    Patterson, Gerald Wesley; Stickle, Angela; Turner, Franklin; Jensen, James; Cahill, Joshua; Mini-RF Team

    2017-10-01

    The Mini-RF instrument aboard NASA’s Lunar Reconnaissance Orbiter (LRO) is a hybrid dual-polarized synthetic aperture radar (SAR) and operates in concert with the Arecibo Observatory (AO) and the Goldstone deep space communications complex 34 meter antenna DSS-13 to collect S- and X-band bistatic radar data of the Moon. Bistatic radar data provide a means to probe the near subsurface for the presence of water ice, which exhibits a strong response in the form of a Coherent Backscatter Opposition Effect (CBOE). This effect has been observed in radar data for the icy surfaces of the Galilean satellites, the polar caps of Mars, polar craters on Mercury, and terrestrial ice sheets in Greenland. Previous work using Mini-RF S-band (12.6 cm) bistatic data suggests the presence of a CBOE associated with the floor of the lunar south polar crater Cabeus. The LRO spacecraft has begun its third extended mission. For this phase of operations Mini-RF is leveraging the existing AO architecture to make S-band radar observations of additional polar craters (e.g., Haworth, Shoemaker, Faustini). The purpose of acquiring these data is to determine whether other polar craters exhibit the response observed for Cabeus. Mini-RF has also initiated a new mode of operation that utilizes the X-band (4.2cm) capability of the instrument receiver and a recently commissioned X/C-band transmitter within the Deep Space Network’s (DSN) Goldstone complex to collect bistatic X-band data of the Moon. The purpose of acquiring these data is to constrain the depth/thickness of materials that exhibit a CBOE response - with an emphasis on observing the floor of Cabeus. Recent Mini-RF X-band observations of the floors of the craters Cabeus do not show evidence for a CBOE. This would suggest that the upper ~0.5 meters of the regolith for the floor of Cabeus do not harber water ice in a form detectable at 4.2 cm wavelengths.

  20. The modification of X and L band radar signals by monomolecular sea slicks

    NASA Technical Reports Server (NTRS)

    Huehnerfuss, H.; Alpers, W.; Cross, A.; Garrett, W. D.; Keller, W. C.; Plant, W. J.; Schuler, D. L.; Lange, P. A.; Schlude, F.

    1983-01-01

    One methyl oleate and two oleyl alcohol surface films were produced on the surface of the North Sea under comparable oceanographic and meteorological conditions in order to investigate their influence on X and L band radar backscatter. Signals are backscattered in these bands primarily by surface waves with lengths of about 2 and 12 cm, respectively, and backscattered power levels in both bands were reduced by the slicks. The reduction was larger at X band than at L band, however, indicating that shorter waves are more intensely damped by the surface films. The oleyl alcohol film caused greater attenuation of short gravity waves than the film of methyl oleate, thus demonstrating the importance of the physicochemical properties of films on the damping of wind-generated gravity capillary waves. Finally, these experiments indicate a distinct dependence of the degree of damping on the angle between wind and waves. Wind-generated waves traveling in the wind direction are more intensely damped by surface films than are waves traveling at large angles to the wind.

  1. Beam Dynamics a Integrated Plane Wave Transformer Photoinjector at S- and X- band

    NASA Astrophysics Data System (ADS)

    Rosenzweig, J. B.; Ding, X.; Pellegrini, X.; Serafini, L.; Yu, D.

    1997-05-01

    The beam dynamics of an integrated S-band rf photoinjector based on the plane wave transformer concept, proposed as part of an SBIR collaboration between UCLA and DULY Research, are studied. The intial design, which calls for an 11.5 cell structure run at a peak on-axis accelerating field of 60 MV/m, and has a compact solenoid around the intial 2.5 cells, is based on the recently developed theory of emittance compensation(L.Serafini, and J.B. Rosenzweig, submitted to Physical Review E.). It calls for matching the beam onto an envelope which is a generalized Brillouin flow, producing a beam which diminishes in transverse size as the square root of the accelerating beam energy. This condition produces a minimized emittance, which for the S-band case is 1 mm-rad at at charge of 1 nC. This design is also scaled to produce nearly identical performance at X-band, giving an injector appropriate to running an FEL at the SLAC NLCTA. It is noted that these designs are insensitive to rf emittance increase, allowign a choice of injection phase, and the option to compress the emitted pulse.

  2. Broad-Band Spectroscopy of Hercules X-1 with Suzaku

    NASA Technical Reports Server (NTRS)

    Asami, Fumi; Enoto, Teruaki; Iwakiri, Wataru; Yamada, Shin'ya; Tamagawa, Toru; Mihara, Tatehiro; Nagase, Fumiaki

    2014-01-01

    Hercules X-1 was observed with Suzaku in the main-on state from 2005 to 2010. The 0.4- 100 keV wide-band spectra obtained in four observations showed a broad hump around 4-9 keV in addition to narrow Fe lines at 6.4 and 6.7 keV. The hump was seen in all the four observations regardless of the selection of the continuum models. Thus it is considered a stable and intrinsic spectral feature in Her X-1. The broad hump lacked a sharp structure like an absorption edge. Thus it was represented by two different spectral models: an ionized partial covering or an additional broad line at 6.5 keV. The former required a persistently existing ionized absorber, whose origin was unclear. In the latter case, the Gaussian fitting of the 6.5-keV line needs a large width of sigma = 1.0-1.5 keV and a large equivalent width of 400-900 eV. If the broad line originates from Fe fluorescence of accreting matter, its large width may be explained by the Doppler broadening in the accretion flow. However, the large equivalent width may be inconsistent with a simple accretion geometry.

  3. High Throughput Light Absorber Discovery, Part 2: Establishing Structure-Band Gap Energy Relationships.

    PubMed

    Suram, Santosh K; Newhouse, Paul F; Zhou, Lan; Van Campen, Douglas G; Mehta, Apurva; Gregoire, John M

    2016-11-14

    Combinatorial materials science strategies have accelerated materials development in a variety of fields, and we extend these strategies to enable structure-property mapping for light absorber materials, particularly in high order composition spaces. High throughput optical spectroscopy and synchrotron X-ray diffraction are combined to identify the optical properties of Bi-V-Fe oxides, leading to the identification of Bi 4 V 1.5 Fe 0.5 O 10.5 as a light absorber with direct band gap near 2.7 eV. The strategic combination of experimental and data analysis techniques includes automated Tauc analysis to estimate band gap energies from the high throughput spectroscopy data, providing an automated platform for identifying new optical materials.

  4. An Improved X-Band Maser System for Deep Space Network Applications

    NASA Astrophysics Data System (ADS)

    Britcliffe, M.; Hanson, T.; Fernandez, J.

    2000-01-01

    An 8450-MHz (X-band) maser system utilizing a commercial Gifford--McMahon (GM) closed-cycle cryocooler (CCR) was designed, fabricated, and demonstrated. The CCR system was used to cool a maser operating at 8450 MHz. The prototype GM CCR system meets or exceeds all Deep Space Network requirements for maser performance. The two-stage GM CCR operates at 4.2 K; for comparison, the DSN's current three-stage cryocooler, which uses a Joule--Thompson cooling stage in addition to GM cooling, operates at 4.5 K. The new CCR withstands heat loads of 1.5 W at 4.2 K as compared to 1 W at 4.5 K for the existing DSN cryocooler used for cooling masers. The measured noise temperature, T_e, of the maser used for these tests is defined at the ambient connection to the antenna feed system. The T_e measured 5.0 K at a CCR temperature of 4.5 K, about 1.5 K higher than the noise temperature of a typical DSN Block II-A X-band traveling-wave maser (TWM). Reducing the temperature of the CCR significantly lowers the maser noise temperature and increases maser gain and bandwidth. The new GM CCR gives future maser systems significant operational advantages, including reduced maintenance time and logistics requirements. The results of a demonstration of this new system are presented. Advantages of using a GM-cooled maser and the effects of the reduced CCR temperature on maser performance are discussed.

  5. Hyper-X Flight Engine Ground Testing for X-43 Flight Risk Reduction

    NASA Technical Reports Server (NTRS)

    Huebner, Lawrence D.; Rock, Kenneth E.; Ruf, Edward G.; Witte, David W.; Andrews, Earl H., Jr.

    2001-01-01

    Airframe-integrated scramjet engine testing has been completed at Mach 7 flight conditions in the NASA Langley 8-Foot High Temperature Tunnel as part of the NASA Hyper-X program. This test provided engine performance and operability data, as well as design and database verification, for the Mach 7 flight tests of the Hyper-X research vehicle (X-43), which will provide the first-ever airframe-integrated scramjet data in flight. The Hyper-X Flight Engine, a duplicate Mach 7 X-43 scramjet engine, was mounted on an airframe structure that duplicated the entire three-dimensional propulsion flowpath from the vehicle leading edge to the vehicle trailing edge. This model was also tested to verify and validate the complete flight-like engine system. This paper describes the subsystems that were subjected to flight-like conditions and presents supporting data. The results from this test help to reduce risk for the Mach 7 flights of the X-43.

  6. Tropical-Forest Structure and Biomass Dynamics from TanDEM-X Radar Interferometry

    Treesearch

    Robert Treuhaft; Yang Lei; Fabio Gonçalves; Michael Keller; João Santos; Maxim Neumann; André Almeida

    2017-01-01

    Changes in tropical-forest structure and aboveground biomass (AGB) contribute directly to atmospheric changes in CO2, which, in turn, bear on global climate. This paper demonstrates the capability of radar-interferometric phase-height time series at X-band (wavelength = 3 cm) to monitor changes in vertical structure and AGB, with sub-hectare and monthly spatial and...

  7. Border Structure of Intercalary Heterochromatin Bands of Drosophila melanogaster Polytene Chromosomes.

    PubMed

    Khoroshko, V A; Zykova, T Yu; Popova, O O; Zhimulev, I F

    2018-03-01

    The precise genomic localization of the borders of 62 intercalary heterochromatin bands in Drosophila polytene chromosomes was determined. A new type of bands containing chromatin of different states was identified. This type is a combination of the gray band and the intercalary heterochromatin band, creating a genetic structure that with a light microscope is identified as a continuous band. The border structure of such bands includes the coding regions of genes with ubiquitous activity.

  8. Experimental test for receiving X-Band data LAPAN-A3 Satellite with 5.4m antenna diameter

    NASA Astrophysics Data System (ADS)

    Dwi Harsono, Sonny; Hasbi, Wahyudi

    2018-05-01

    LAPAN-A3 / LAPAN-IPB Satellite launched on June 22, 2016 (03:56 UTC) as an experimental micro-satellite for remote sensing and monitoring of maritime traffic. The Satellite was launched as a secondary payload on ISRO Cartosat-2C as its main payload, the launch carried out at SDSC (Satish Dhawan Space Centre) in India using PSLV-C34 rocket launcher. The Satellite was in orbit polar sun-synchronous with a height of 505 km above sea level. It has an inclination angle of 97 degrees and heavy satellite 115 kg, with this orbit, the satellite will pass through Ground station 4 times (2 times during the day and two times at night) with a duration of the track at the time of the pass about 10-15 minutes. The Satellite payload carried 4 bands Line Scan Cameras and Digital Imager (SpaceCam). For main mission is the earth observation for food vegetables And as additional mission is carrying AIS (Automatic Identification System) receiver to monitor maritime traffic in the region of the poles, then Star Sensor made by LAPAN for qualifying room, then for scientific contained magnetometer sensor for monitoring the Earth's Magnetic field. The purpose of this scientific paper is to test the reception of data payloads of the LAPAN-A3 satellite on X-Band frequency of 8.2 GHz using a 5.4 M solid antenna Ground Stations LAPAN in Pare-Pare. The purpose of this experiment will tell us with 5.4 meter of diameter solid antenna is capable or not enough for HDRM receiver to lock a signal and produce the data output, and how this result if compare with 11 meter of diameter antenna in Splitzberg Groundstation in Norway.

  9. Compaction bands in shale revealed through digital volume correlation of time-resolved X-ray tomography scans

    NASA Astrophysics Data System (ADS)

    McBeck, J.; Kobchenko, M.; Hall, S.; Tudisco, E.; Cordonnier, B.; Renard, F.

    2017-12-01

    Previous studies have identified compaction bands primarily within sandstones, and in fewer instances, within other porous rocks and sediments. Using Digital Volume Correlation (DVC) of X-ray microtomography scans, we find evidence of localized zones of high axial contraction that form tabular structures sub-perpendicular to maximum compression, σ1, in Green River shale. To capture in situ strain localization throughout loading, two shale cores were deformed in the HADES triaxial deformation apparatus installed on the X-ray microtomography beamline ID19 at the European Synchrotron Radiation Facility. In these experiments, we increase σ1 in increments of two MPa, with constant confining pressure (20 MPa), until the sample fails in macroscopic shear. After each stress step, a 3D image of the sample inside the rig is acquired at a voxel resolution of 6.5 μm. The evolution of lower density regions within 3D reconstructions of linear attenuation coefficients reveal the development of fractures that fail with some opening. If a fracture produces negligible dilation, it may remain undetected in image segmentation of the reconstructions. We use the DVC software TomoWarp2 to identify undetected fractures and capture the 3D incremental displacement field between each successive pair of microtomography scans acquired in each experiment. The corresponding strain fields reveal localized bands of high axial contraction that host minimal shear strain, and thus match the kinematic definition of compaction bands. The bands develop sub-perpendicular to σ1 in the two samples in which pre-existing bedding laminations were oriented parallel and perpendicular to σ1. As the shales deform plastically toward macroscopic shear failure, the number of bands and axial contraction within the bands increase, while the spacing between the bands decreases. Compaction band development accelerates the rate of overall axial contraction, increasing the mean axial contraction throughout the sample

  10. Band alignment of TiO{sub 2}/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fan, Haibo, E-mail: hbfan@nwu.edu.cn, E-mail: liusz@snnu.edu.cn; School of Physics, Northwest University, Xi’an 710069; Yang, Zhou

    2016-01-15

    The energy band alignment between pulsed-laser-deposited TiO{sub 2} and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO{sub 2}/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltagemore » test has verified that the band alignment has a significant effect on the current transport of the heterojunction.« less

  11. Ka-band and X-band observations of the solar corona acquired during the Cassini 2001 superior conjunction

    NASA Technical Reports Server (NTRS)

    Morabito, D. D.

    2002-01-01

    Simultaneous dual-frequency Ka-band (32 GHz) and X-band (8.4 GHz) carrier signal data have been acquired during the superior conjunction of the Cassini spacecraft June 2001, using the NASA Deep Space Network's facilities located in Goldstone, California. The solar elongation angle of the observations varied from -4.1 degrees (-16 solar radii) to -0.6 degrees (-2.3 solar radii). The observed coronal and solar effects on the signals include spectral broadening, amplitude scintillation, phase scintillation, and increased noise. The measurements were generally consistent with existing solar models, except during solar transient events when the signatures of the measurements were observed to increase significantly above the quiet background levels. This is the second solar conjunction of Cassini for which simultaneous X/Ka data were acquired. Both solar conjunctions, conducted in May 2000 and June 2001, occurred near the peak of the current 11 year solar cycle.

  12. Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Qian, Ling-Xuan; Wu, Ze-Han; Zhang, Yi-Yu; Liu, Yuan; Song, Jia-Qi; Liu, Xing-Zhao; Li, Yan-Rong

    2017-04-01

    Amorphous InGaZnO4 thin film transistors (a-IGZO TFTs) with HfLaO gate dielectrics have been widely demonstrated to possess extremely excellent electrical characteristics, and thus show great potential for applications in various next-generation electronic products. Nevertheless, the in-depth understanding of HfLaO/IGZO interfacial features is still lacking, which makes further device optimization lack clear guidance. In this work, the band alignment and interfacial chemical structure of a sputtering-prepared HfLaO/IGZO heterojunction was investigated through x-ray photoelectron spectroscopy. The valence and conduction band offsets (ΔE v and ΔE c) at the interface were determined to be 0.57 eV and 1.48 eV, respectively. The relatively large ΔE v is mainly attributed to the formation of the interfacial layer (IL) and thus the upward band bending from IGZO to the surface of HfLaO. Furthermore, it was found that the oxygen vacancies on the surface of IGZO were significantly suppressed upon the deposition of HfLaO, which not only explained the previously reported ultrahigh performance of a-IGZO/HfLaO TFTs to some extent, but also additionally validated the formation of the IL. Our findings have successfully revealed the importance of ILs in modifying the band alignment and interfacial trap states of HfLaO/IGZO heterojunctions, thus suggesting a potential route to further optimizing a-IGZO/HfLaO TFTs so as to satisfy the requirements of next-generation technologies.

  13. Role of biaxial strain and microscopic ordering for structural and electronic properties of InxGa1 -xN

    NASA Astrophysics Data System (ADS)

    Cui, Ying; Lee, Sangheon; Freysoldt, Christoph; Neugebauer, Jörg

    2015-08-01

    The structural and electronic properties of InxGa1 -xN alloys are studied as a function of c -plane biaxial strain and In ordering by density functional theory with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. A nonlinear variation of the c lattice parameter with In content is observed in biaxial strain and should be taken into account when deducing In content from interplanar distances. From compressive to tensile strain, the character of the top valence-band state changes, leading to a nonlinear variation of the band gap in InxGa1 -xN . Interestingly, the well-known bowing of the InxGa1 -xN band gap is largely removed for alloys grown strictly coherently on GaN, while the actual values for band gaps at x <0.33 are hardly affected by strain. Ordering plays a minor role for lattice constants but may induce changes of the band gap up to 0.15 eV.

  14. High-Power Testing of 11.424-GHz Dielectric-Loaded Accelerating Structures

    NASA Astrophysics Data System (ADS)

    Gold, Steven; Gai, Wei

    2001-10-01

    Argonne National Laboratory has previously described the design, construction, and bench testing of an X-band traveling-wave accelerating structure loaded with a permittivity=20 dielectric (P. Zou et al., Rev. Sci. Instrum. 71, 2301, 2000.). We describe a new program to build a test accelerator using this structure. The accelerator will be powered by the high-power 11.424-GHz radiation from the magnicon facility at the Naval Research Laboratory ( O.A. Nezhevenko et al., Proc. PAC 2001, in press). The magnicon is expected to provide up to 30 MW from each of two WR-90 output waveguide arms in pulses of up to 1 microsecond duration, permitting tests up to a gradient of 40 MV/m. Still higher power pulses (100-500 MW) may be available at the output of an active pulse compressor driven by the magnicon ( A.L. Vikharev et al., Proc. 9th Workshop on Advanced Accelerator Concepts.).

  15. Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films

    NASA Astrophysics Data System (ADS)

    Zhang, Fabi; Li, Haiou; Cui, Yi-Tao; Li, Guo-Ling; Guo, Qixin

    2018-04-01

    The optical properties and band structure evolution from amorphous to crystalline Ga2O3 films was investigated in this work. Amorphous and crystalline Ga2O3 films were obtained by changing the growth substrate temperatures of pulsed laser deposition and the crystallinity increase with the rising of substrate temperature. The bandgap value and ultraviolet emission intensity of the films increase with the rising of crystallinity as observed by means of spectrophotometer and cathodoluminescence spectroscopy. Abrupt bandgap value and CL emission variations were observed when amorphous to crystalline transition took place. X-ray photoelectron spectroscopy core level spectra reveal that more oxygen vacancies and disorders exist in amorphous Ga2O3 film grown at lower substrate temperature. The valence band spectra of hard X-ray photoelectron spectroscopy present the main contribution from Ga 4sp for crystalline film deposited at substrate temperature of 500 oC, while extra subgap states has been observed in amorphous film deposited at 300 oC. The oxygen vacancy and the extra subgap density of states are suggested to be the parts of origin of bandgap and CL spectra variations. The experimental data above yields a realistic picture of optical properties and band structure variation for the amorphous to crystalline transition of Ga2O3 films.

  16. Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

    2001-01-01

    Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the

  17. Nano-crystalline Magnesium Substituted Cadmium Ferrites as X-band Microwave Absorbers

    NASA Astrophysics Data System (ADS)

    Bhongale, S. R.; Ingawale, H. R.; Shinde, T. J.; Pubby, Kunal; Bindra Narang, Sukhleen; Vasambekar, P. N.

    2017-11-01

    The magnetic and electromagnetic properties of nanocrystalline spinel ferrites with chemical formula MgxCd1-xFe2O4 (x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0) prepared by oxalate co-precipitation method under microwave sintering technique were studied. The magnetic and dielectric parameters of ferrites were determined by using vibrating sample magnetometer (VSM) and vector network analyzer (VNA) respectively. Magnetic parameters such as saturation magnetizations (Ms), coercive force (Hc), remnant magnetization (Mr), Yafet-Kittel (Y-K) angle of ferrites were determined from hysteresis loops. The variation of real permittivity (ε‧), dielectric loss tangent (tanδe), real permeability (μ‧) and magnetic loss tangent (tanδm) with frequency and Mg2+content were studied in X-band frequency range. The values of ε‧, tanδe, μ‧ and tanδm of ferrites were observed to be in range of 4.2 - 6.12, 2.9 × 10-1 - 6 × 10-2, 0.6 - 1.12 and 4.5 × 10-1 - 2 × 10-3 respectively for the prepared compositions. The study of variation of reflection loss with frequency of all ferrites shows that ferrite with magnesium content x = 0.4 can be potential candidate for microwave applications in X-band.

  18. Floquet band structure of a semi-Dirac system

    NASA Astrophysics Data System (ADS)

    Chen, Qi; Du, Liang; Fiete, Gregory A.

    2018-01-01

    In this work we use Floquet-Bloch theory to study the influence of circularly and linearly polarized light on two-dimensional band structures with semi-Dirac band touching points, taking the anisotropic nearest neighbor hopping model on the honeycomb lattice as an example. We find that circularly polarized light opens a gap and induces a band inversion to create a finite Chern number in the two-band model. By contrast, linearly polarized light can either open up a gap (polarized in the quadratically dispersing direction) or split the semi-Dirac band touching point into two Dirac points (polarized in the linearly dispersing direction) by an amount that depends on the amplitude of the light. Motivated by recent pump-probe experiments, we investigated the nonequilibrium spectral properties and momentum-dependent spin texture of our model in the Floquet state following a quench in the absence of phonons, and in the presence of phonon dissipation that leads to a steady state independently of the pump protocol. Finally, we make connections to optical measurements by computing the frequency dependence of the longitudinal and transverse optical conductivity for this two-band model. We analyze the various contributions from interband transitions and different Floquet modes. Our results suggest strategies for optically controlling band structures and experimentally measuring topological Floquet systems.

  19. Tunable band gap in Bi(Fe1-xMnx)O3 films

    NASA Astrophysics Data System (ADS)

    Xu, X. S.; Ihlefeld, J. F.; Lee, J. H.; Ezekoye, O. K.; Vlahos, E.; Ramesh, R.; Gopalan, V.; Pan, X. Q.; Schlom, D. G.; Musfeldt, J. L.

    2010-05-01

    In order to investigate band gap tunability in polar oxides, we measured the optical properties of a series of Bi(Fe1-xMnx)O3 thin films. The absorption response of the mixed metal solid solutions is approximately a linear combination of the characteristics of the two end members, a result that demonstrates straightforward band gap tunability in this system.

  20. Land cover classification accuracy from electro-optical, X, C, and L-band Synthetic Aperture Radar data fusion

    NASA Astrophysics Data System (ADS)

    Hammann, Mark Gregory

    The fusion of electro-optical (EO) multi-spectral satellite imagery with Synthetic Aperture Radar (SAR) data was explored with the working hypothesis that the addition of multi-band SAR will increase the land-cover (LC) classification accuracy compared to EO alone. Three satellite sources for SAR imagery were used: X-band from TerraSAR-X, C-band from RADARSAT-2, and L-band from PALSAR. Images from the RapidEye satellites were the source of the EO imagery. Imagery from the GeoEye-1 and WorldView-2 satellites aided the selection of ground truth. Three study areas were chosen: Wad Medani, Sudan; Campinas, Brazil; and Fresno- Kings Counties, USA. EO imagery were radiometrically calibrated, atmospherically compensated, orthorectifed, co-registered, and clipped to a common area of interest (AOI). SAR imagery were radiometrically calibrated, and geometrically corrected for terrain and incidence angle by converting to ground range and Sigma Naught (?0). The original SAR HH data were included in the fused image stack after despeckling with a 3x3 Enhanced Lee filter. The variance and Gray-Level-Co-occurrence Matrix (GLCM) texture measures of contrast, entropy, and correlation were derived from the non-despeckled SAR HH bands. Data fusion was done with layer stacking and all data were resampled to a common spatial resolution. The Support Vector Machine (SVM) decision rule was used for the supervised classifications. Similar LC classes were identified and tested for each study area. For Wad Medani, nine classes were tested: low and medium intensity urban, sparse forest, water, barren ground, and four agriculture classes (fallow, bare agricultural ground, green crops, and orchards). For Campinas, Brazil, five generic classes were tested: urban, agriculture, forest, water, and barren ground. For the Fresno-Kings Counties location 11 classes were studied: three generic classes (urban, water, barren land), and eight specific crops. In all cases the addition of SAR to EO resulted

  1. Design of 6 MeV X-band electron linac for dual-head gantry radiotherapy system

    NASA Astrophysics Data System (ADS)

    Shin, Seung-wook; Lee, Seung-Hyun; Lee, Jong-Chul; Kim, Huisu; Ha, Donghyup; Ghergherehchi, Mitra; Chai, Jongseo; Lee, Byung-no; Chae, Moonsik

    2017-12-01

    A compact 6 MeV electron linac is being developed at Sungkyunkwan University, in collaboration with the Korea atomic energy research institute (KAERI). The linac will be used as an X-ray source for a dual-head gantry radiotherapy system. X-band technology has been employed to satisfy the size requirement of the dual-head gantry radiotherapy machine. Among the several options available, we selected a pi/2-mode, standing-wave, side-coupled cavity. This choice of radiofrequency (RF) cavity design is intended to enhance the shunt impedance of each cavity in the linac. An optimum structure of the RF cavity with a high-performance design was determined by applying a genetic algorithm during the optimization procedure. This paper describes the detailed design process for a single normal RF cavity and the entire structure, including the RF power coupler and coupling cavity, as well as the beam dynamics results.

  2. Atomic and electronic structure of Mo6S9-xIx nanowires

    NASA Astrophysics Data System (ADS)

    Meden, A.; Kodre, A.; Padeznik Gomilsek, J.; Arcon, I.; Vilfan, I.; Vrbanic, D.; Mrzel, A.; Mihailovic, D.

    2005-09-01

    Moybdenum-based subnanometre diameter nanowires are easy to synthesize and disperse, and they exhibit a variety of functional properties in which they are superior to other one-dimensional materials. However, further progress in the understanding of physical properties and the development of new and specific applications have so far been impeded by the fact that their structure was not accurately known. Here we report on a combination of systematic x-ray diffraction and extended x-ray absorption fine structure experiments, and first-principles theoretical structure calculations, which are used to determine the atomic skeletal structure of individual Mo6S9-xIx (MoSIx) nanowires, their packing arrangement within bundles and their electronic band structure. From this work we conclude that the variations in functional properties appear to arise from different stoichiometry, not skeletal structure. A supplementary data file is available from http://stacks.iop.org/0957-4484/16/1578

  3. A note on AB INITIO semiconductor band structures

    NASA Astrophysics Data System (ADS)

    Fiorentini, Vincenzo

    1992-09-01

    We point out that only the internal features of the DFT ab initio theoretical picture of a crystal should be used in a consistent ab initio calculation of the band structure. As a consequence, we show that ground-state band structure calculations should be performed for the system in equilibrium at zero pressure, i.e. at the computed equilibrium cell volume ω th. Examples of consequences of this attitude are considered.

  4. Monoclinic Tungsten Oxide with {100} Facet Orientation and Tuned Electronic Band Structure for Enhanced Photocatalytic Oxidations.

    PubMed

    Zhang, Ning; Chen, Chen; Mei, Zongwei; Liu, Xiaohe; Qu, Xiaolei; Li, Yunxiang; Li, Siqi; Qi, Weihong; Zhang, Yuanjian; Ye, Jinhua; Roy, Vellaisamy A L; Ma, Renzhi

    2016-04-27

    Exploring surface-exposed highly active crystal facets for photocatalytic oxidations is promising in utilizing monoclinic WO3 semiconductor. However, the previously reported highly active facets for monoclinic WO3 were mainly toward enhancing photocatalytic reductions. Here we report that the WO3 with {100} facet orientation and tuned surface electronic band structure can effectively enhance photocatalytic oxidation properties. The {100} faceted WO3 single crystals are synthesized via a facile hydrothermal method. The UV-visible diffuse reflectance, X-ray photoelectron spectroscopy valence band spectra, and photoelectrochemical measurements suggest that the {100} faceted WO3 has a much higher energy level of valence band maximum compared with the normal WO3 crystals without preferred orientation of the crystal face. The density functional theory calculations reveal that the shift of O 2p and W 5d states in {100} face induce a unique band structure. In comparison with the normal WO3, the {100} faceted WO3 exhibits an O2 evolution rate about 5.1 times in water splitting, and also shows an acetone evolution rate of 4.2 times as well as CO2 evolution rate of 3.8 times in gaseous degradation of 2-propanol. This study demonstrates an efficient crystal face engineering route to tune the surface electronic band structure for enhanced photocatalytic oxidations.

  5. Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α-As2Te3-xSex (0 ≤ x ≤ 1.5).

    PubMed

    Vaney, Jean-Baptiste; Delaizir, Gaëlle; Wiendlocha, Bartlomiej; Tobola, Janusz; Alleno, Eric; Piarristeguy, Andrea; Gonçalves, Antonio Pereira; Gendarme, Christine; Malaman, Bernard; Dauscher, Anne; Candolfi, Christophe; Lenoir, Bertrand

    2017-02-20

    We report on the influence of Se substitution on the electronic band structure and thermoelectric properties (5-523 K) of the solid solution α-As 2 Te 3-x Se x (0 ≤ x ≤ 1.5). All of the polycrystalline compounds α-As 2 Te 3-x Se x crystallize isostructurally in the monoclinic space group C2/m (No. 12, Z = 4). Regardless of the Se content, chemical analyses performed by scanning electron microscopy and electron probe microanalysis indicate a good chemical homogeneity, with only minute amounts of secondary phases for some compositions. In agreement with electronic band structure calculations, neutron powder diffraction suggests that Se does not randomly substitute for Te but exhibits a site preference. These theoretical calculations further predict a monotonic increase in the band gap energy with the Se content, which is confirmed experimentally by absorption spectroscopy measurements. Increasing x up to x = 1.5 leaves unchanged both the p-type character and semiconducting nature of α-As 2 Te 3 . The electrical resistivity and thermopower gradually increase with x as a result of the progressive increase in the band gap energy. Despite the fact that α-As 2 Te 3 exhibits very low lattice thermal conductivity κ L , the substitution of Se for Te further lowers κ L to 0.35 W m -1 K -1 at 300 K. The compositional dependence of the lattice thermal conductivity closely follows classical models of phonon alloy scattering, indicating that this decrease is due to enhanced point-defect scattering.

  6. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mikhailova, M. P.; Ivanov, E. V.; Danilov, L. V.

    2014-06-14

    We report on superlinear electroluminescent structures based on AlSb/InAs{sub 1−x}Sb{sub x}/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs{sub 1−x}Sb{sub x}/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electronmore » level E{sub e1} in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level E{sub e1} to the first hole level E{sub h1} in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.« less

  7. Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: A real-space view

    NASA Astrophysics Data System (ADS)

    Virkkala, Ville; Havu, Ville; Tuomisto, Filip; Puska, Martti J.

    2013-07-01

    The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1-xNx and GaP1-xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.

  8. Significant reduction in NiO band gap upon formation of Lix Ni1-x O alloys: applications to solar energy conversion.

    PubMed

    Alidoust, Nima; Toroker, Maytal Caspary; Keith, John A; Carter, Emily A

    2014-01-01

    Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ∼ 1.5-2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO's large band gap (∼ 4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ∼ 2.0 eV when NiO is alloyed with Li2O. We show that Lix Ni1-x O alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO's desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. A discussion on the use of X-band SAR images in marine applications

    NASA Astrophysics Data System (ADS)

    Schiavulli, D.; Sorrentino, A.; Migliaccio, M.

    2012-10-01

    The Synthetic Aperture Radar (SAR) is able to generate images of the sea surface that can be exploited to extract geophysical information of environmental interest. In order to enhance the operational use of these data in the marine applications the revisit time is to be improved. This goal can be achieved by using SAR virtual or real constellations and/or exploiting new antenna technologies that allow huge swath and fine resolution. Within this framework, the presence of the Italian and German X-band SAR constellations is of special interest while the new SAR technologies are not nowadays operated. Although SAR images are considered to be independent of weather conditions, this is only partially true at higher frequencies, e.g. X-band. In fact, observations can present signature corresponding to high intensity precipitating clouds, i.e. rain cells. Further, ScanSAR images may be characterized by the presence of processing artifacts, called scalloping, that corrupt image interpretation. In this paper we review these key facts that are at the basis of an effective use of X-band SAR images for marine applications.

  10. The effect of Y3+ substitution on the structural, optical band-gap, and magnetic properties of cobalt ferrite nanoparticles.

    PubMed

    Alves, T E P; Pessoni, H V S; Franco, A

    2017-06-28

    In this study we investigated the structural, optical band-gap, and magnetic properties of CoY x Fe 2-x O 4 (0 ≤ x ≤ 0.04) nanoparticles (NPs) synthesized using a combustion reaction method without the need for subsequent heat treatment or the calcing process. The particle size measured from X-ray diffraction (XRD) patterns and transmission electron microscope (TEM) images confirms the nanostructural character in the range of 16-36 nm. The optical band-gap (E g ) values increase with the Y 3+ ion (x) concentration being 3.30 and 3.58 eV for x = 0 and x = 0.04, respectively. The presence of yttrium in the cobalt ferrite (Y-doped cobalt ferrite) structure affects the magnetic properties. For instance, the saturation magnetization, M s and remanent magnetization, M r , decrease from 69 emu g -1 to 33 and 28 to 12 emu g -1 for x = 0 and x = 0.04, respectively. On the other hand the coercivity, H c , increases from 1100 to 1900 Oe for x = 0 and x = 0.04 at room temperature. Also we found that M s , M r , and H c decreased with increasing temperature up to 773 K. The cubic magnetocrystalline constant, K 1 , determined by using the "law of approach" (LA) to saturation decreases with Y 3+ ion concentration and temperature. K 1 values for x = 0 (x = 0.04) were 3.3 × 10 6 erg cm -3 (2.0 × 10 6 erg cm -3 ) and 0.4 × 10 6 erg cm -3 (0.3 × 10 6 erg cm -3 ) at 300 K and 773 K, respectively. The results were discussed in terms of inter-particle interactions induced by thermal fluctuations, and Co 2+ ion distribution over tetrahedral A-sites and octahedral B-sites of the spinel structure due to Y 3+ ion substitution.

  11. A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al x Ga1- x As quantum well structures

    NASA Astrophysics Data System (ADS)

    Donmez, Omer; Nutku, Ferhat; Erol, Ayse; Arikan, Cetin M.; Ergun, Yuksel

    2012-11-01

    In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al x Ga1- x As barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form. Since the barriers are staircase-like, the structure has different ground state energies; therefore, several optical transitions take place in the spectrum which cannot be resolved in a conventional photoluminescence technique at room temperature. To analyze the experimental results, all energy levels in the conduction and in the valance band were calculated using transfer matrix technique, taking into account the effective mass and the parabolic band approximations. A comparison of the PR results with the calculated optical transition energies showed an excellent agreement. Several optical transition energies of the QWIP structures were resolved from PR measurements. It is concluded that PR spectroscopy is a very useful experimental tool to characterize complicated structures with a high accuracy at room temperature.

  12. Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn 1–xCa xSe

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Matthews, Bethany E.; Holder, Aaron M.; Schelhas, Laura T.

    We grow and kinetically stabilize the isotropic rocksalt phase of SnSe thin films by alloying SnSe with CaSe. Thin polycrystalline films of the metastable heterostructural alloy Sn 1–xCa xSe are synthesized by pulsed laser deposition on amorphous SiO 2 over the entire composition range 0 < x < 1. We observe the theoretically-predicted, composition-driven change from a layered, orthorhombic structure to an isotropic, cubic structure near x = 0.18, in reasonable agreement with the theoretical value of x = 0.13 calculated from first principles. The optical band gap is highly non-linear in x and the trend agrees with theory predictions.more » Compared to the layered end-member SnSe, the isotropic alloy near the orthorhombic-to-rocksalt transition has a p-type electrical resistivity three orders of magnitude lower, and a thermoelectric power factor at least ten times larger. Furthermore manipulation of the structure of a functional material like SnSe via alloying may provide a new path to enhanced functionality, in this case, improved thermoelectric performance.« less

  13. Using heterostructural alloying to tune the structure and properties of the thermoelectric Sn 1–xCa xSe

    DOE PAGES

    Matthews, Bethany E.; Holder, Aaron M.; Schelhas, Laura T.; ...

    2017-07-21

    We grow and kinetically stabilize the isotropic rocksalt phase of SnSe thin films by alloying SnSe with CaSe. Thin polycrystalline films of the metastable heterostructural alloy Sn 1–xCa xSe are synthesized by pulsed laser deposition on amorphous SiO 2 over the entire composition range 0 < x < 1. We observe the theoretically-predicted, composition-driven change from a layered, orthorhombic structure to an isotropic, cubic structure near x = 0.18, in reasonable agreement with the theoretical value of x = 0.13 calculated from first principles. The optical band gap is highly non-linear in x and the trend agrees with theory predictions.more » Compared to the layered end-member SnSe, the isotropic alloy near the orthorhombic-to-rocksalt transition has a p-type electrical resistivity three orders of magnitude lower, and a thermoelectric power factor at least ten times larger. Furthermore manipulation of the structure of a functional material like SnSe via alloying may provide a new path to enhanced functionality, in this case, improved thermoelectric performance.« less

  14. Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

    NASA Astrophysics Data System (ADS)

    Yamamoto, Taishi; Taoka, Noriyuki; Ohta, Akio; Truyen, Nguyen Xuan; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Makihara, Katsunori; Nakatsuka, Osamu; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-06-01

    The energy band structure of a Ga-oxide/GaN structure formed by remote oxygen plasma exposure and the electrical interface properties of the GaN metal–oxide–semiconductor (MOS) capacitors with the SiO2/Ga-oxide/GaN structures with postdeposition annealing (PDA) at various temperatures have been investigated. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopy clarified that the formed Ga-oxide layer is neither a single nor polycrystalline phase with high crystallinity. We found that the energy band offsets at the conduction band minimum and at the valence band maximum between the Ga-oxide layer and the GaN surface were 0.4 and 1.2 ± 0.2 eV, respectively. Furthermore, capacitance–voltage (C–V) characteristics revealed that the interface trap density (D it) is lower than the evaluation limit of Terman method without depending on the PDA temperatures, and that the SiO2/Ga-oxide stack can work as a protection layer to maintain the low D it, avoiding the significant decomposition of GaN at the high PDA temperature of 800 °C.

  15. Highly Structured Wind in Vela X-1

    NASA Technical Reports Server (NTRS)

    Kreykenbohm, Ingo; Wilms, Joern; Kretschmar, Peter; Torrejon, Jose Miguel; Pottschmidt, Katja; Hanke, Manfred; Santangelo, Andrea; Ferrigno, Carlo; Staubert, Ruediger

    2008-01-01

    We present an in-depth analysis of the spectral and temporal behavior of a long almost uninterrupted INTEGRAL observation of Vela X-1 in Nov/Dec 2003. In addition to an already high activity level, Vela X-1 exhibited several very intense flares with a maximum intensity of more than 5 Crab in the 20 40 keV band. Furthermore Vela X-1 exhibited several off states where the source became undetectable with ISGRI. We interpret flares and off states as being due to the strongly structured wind of the optical companion: when Vela X-1 encounters a cavity in the wind with strongly reduced density, the flux will drop, thus potentially triggering the onset of the propeller effect which inhibits further accretion, thus giving rise to the off states. The required drop in density to trigger the propeller effect in Vela X-1 is of the same order as predicted by theoretical papers for the densities in the OB star winds. The same structured wind can give rise to the giant flares when Vela X-1 encounters a dense blob in the wind. Further temporal analysis revealed that a short lived QPO with a period of 6800 sec is present. The part of the light curve during which the QPO is present is very close to the off states and just following a high intensity state, thus showing that all these phenomena are related.

  16. Nitrogen-Induced Perturbation of the Valence Band States in GaP1-xNx Alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dudiy, S. V.; Zunger, A.; Felici, M.

    2006-01-01

    The effects of diluted nitrogen impurities on the valence- and conduction-band states of GaP{sub 1-x}N{sub x} have been predicted and measured experimentally. The calculation uses state-of-the-art atomistic modeling: we use large supercells with screened pseudopotentials and consider several random realizations of the nitrogen configurations. These calculations agree with photoluminescence excitation (PLE) measurements performed for nitrogen concentrations x up to 0.035 and photon energies up to 1 eV above the GaP optical-absorption edge, as well as with published ellipsometry data. In particular, a predicted nitrogen-induced buildup of the L character near the valence- and conduction-band edges accounts for the surprising broad-absorptionmore » plateau observed in PLE between the X{sub 1c} and the {Lambda}{sub 1c} critical points of GaP. Moreover, theory accounts quantitatively for the downward bowing of the indirect conduction-band edge and for the upward bowing of the direct transition with increasing nitrogen concentration. We review some of the controversies in the literature regarding the shifts in the conduction band with composition, and conclude that measured results at ultralow N concentration cannot be used to judge behavior at a higher concentration. In particular, we find that at the high concentrations of nitrogen studied here ({approx}1%) the conduction-band edge (CBE) is a hybridized state made from the original GaP X{sub 1c} band-edge state plus all cluster states. In this limit, the CBE plunges down in energy as the N concentration increases, in quantitative agreement with the measurements reported here. However, at ultralow nitrogen concentrations (<0.1%), the CBE is the nearly unperturbed host X{sub 1c}, which does not sense the nitrogen cluster levels. Thus, this state does not move energetically as nitrogen is added and stays pinned in energy, in agreement with experimental results.« less

  17. Tests of the Rockwell Si:As Back-Illuminated Blocked-Impurity Band (BIBIB) detectors

    NASA Technical Reports Server (NTRS)

    Wolf, J.; Groezinger, U.; Burgdorf, M.; Salama, A.

    1989-01-01

    Two arrays of Rockwell's Si:As back-illuminated blocked-impurity-band detectors were tested at the Max-Planck-Institute for Astronomy (MPIA) at low background and low temperature for possible use in the astronomical space experiment ISOPHOT. For these measurements special test equipment was put together. A cryostat was mechanically modified to accommodate the arrays and special peripheral electronics was added to a microprocessor system to drive the cold multiplexer and to acquire the output data. The first device, a 16x50 element array on a fan-out board was used to test individual pixels with a trans-impedance-amplifier at a photon background of 10(exp 8) Ph s(-1)cm(-2) and at temperatures of 2.7 to 4.4 K. The noise-equivalent-power NEP is in the range 5 - 7 x 10(exp -18) WHz(exp -1/2), the responsivity is less than or equal to 100 AW(exp -1)(f = 10 Hz). The second device was a 10x50 array including a cold readout electronics of switched FETs (SWIFET). Measurements of this array were done in a background range of 5 x 10(exp 5) to 5 x 10(exp 11) Ph s(exp-1)cm(exp-2) and at operating temperatures between 3.0 and 4.8 K. The NEP ranges from less than 10(exp -18) at the lowest background to 2 x 10(exp -16) WHz(exp -1/2) at the highest flux.

  18. High power experimental studies of hybrid photonic band gap accelerator structures

    DOE PAGES

    Zhang, JieXi; Munroe, Brian J.; Xu, Haoran; ...

    2016-08-31

    This paper reports the first high power tests of hybrid photonic band gap (PBG) accelerator structures. Three hybrid PBG (HPBG) structures were designed, built and tested at 17.14 GHz. Each structure had a triangular lattice array with 60 inner sapphire rods and 24 outer copper rods sandwiched between copper disks. The dielectric PBG band gap map allows the unique feature of overmoded operation in a TM 02 mode, with suppression of both lower order modes, such as the TM 11 mode, as well as higher order modes. The use of sapphire rods, which have negligible dielectric loss, required inclusion ofmore » the dielectric birefringence in the design. The three structures were designed to sequentially reduce the peak surface electric field. Simulations showed relatively high surface fields at the triple point as well as in any gaps between components in the clamped assembly. The third structure used sapphire rods with small pin extensions at each end and obtained the highest gradient of 19 MV/m, corresponding to a surface electric field of 78 MV/m, with a breakdown probability of 5×10 –1 per pulse per meter for a 100-ns input power pulse. Operation at a gradient above 20 MV/m led to runaway breakdowns with extensive light emission and eventual damage. For all three structures, multipactor light emission was observed at gradients well below the breakdown threshold. As a result, this research indicated that multipactor triggered at the triple point limited the operational gradient of the hybrid structure.« less

  19. Simultaneous dual-band radar development

    NASA Technical Reports Server (NTRS)

    Liskow, C. L.

    1974-01-01

    Efforts to design and construct an airborne imaging radar operating simultaneously at L band and X band with an all-inertial navigation system in order to form a dual-band radar system are described. The areas of development include duplex transmitters, receivers, and recorders, a control module, motion compensation for both bands, and adaptation of a commercial inertial navigation system. Installation of the system in the aircraft and flight tests are described. Circuit diagrams, performance figures, and some radar images are presented.

  20. Modelling Ground Based X- and Ku-Band Observations of Tundra Snow

    NASA Astrophysics Data System (ADS)

    Kasurak, A.; King, J. M.; Kelly, R. E.

    2012-12-01

    main physical processes represented by the model are snow volume scattering and ground surface reflectance. With a larger correction needed for X-band, where the ground portion of backscatter is expected to be larger, the contribution from the underlying soil is explored first. The ground contribution in sRT is computed using the semi-empirical Oh et al. (1992) model using permittivity from a temperate mineral soil based model. The ground response is tested against two observations of snow-removed tundra, and one observation of snow free tundra. A secondary analysis is completed using a modified sRT ground model, incorporating recent work on frozen organic permittivity by Mironov et al. (2010). Multi-scale surface roughness resulting from superimposed microtopography on regularly distributed hummocks is also addressed. These results demonstrate the applicability of microwave scattering models to tundra snowpacks underlain with peat, and demonstrate the applicability of the CoReH2O sRT model.

  1. Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

    PubMed

    Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

    2018-09-01

    We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

  2. Reanalysis and extension of the MnH A7Π- X7Σ + (0, 0) band: Fine structure and hyperfine-induced rotational branches

    NASA Astrophysics Data System (ADS)

    Varberg, Thomas D.; Gray, Jeffrey A.; Field, Robert W.; Merer, Anthony J.

    1992-12-01

    The A7Π- X7Σ + (0, 0) band of MnH at 568 nm has been recorded by laser fluorescence excitation spectroscopy. The original rotational analysis of Nevin [ Proc. R. Irish Acad.48A, 1-45 (1942); 50A, 123-137 (1945)] has been extended with some corrections at low J. Systematic internal hyperfine perturbations in the X7Σ + state, caused by the Δ N = 0, Δ J = ±1 matrix elements of the 55Mn hyperfine term in the Hamiltonian, have been observed in all seven electron spin components over the entire range of N″ studied. These perturbations destroy the "goodness" of J″ as a quantum number, giving rise to hyperfine-induced Δ J = ±2 rotational branches and to observable energy shifts of the most severely affected levels. The A7Π state, with A = 40.5 cm -1 and B = 6.35 cm -1, evolves rapidly from Hund's case ( a) to case ( b) coupling, which produces anomalous branch patterns at low J. A total of 156 rotational branches have been identified and fitted by least squares to an effective Hamiltonian, providing precise values for the rotational and fine structure constants. Values of the principal constants determined in the fit are (1σ errors in units of the last digit are listed in parentheses): The fine structures of the A7Π and X7Σ + states confirm the assignment of the A ← X transition as Mn 4 pπ ← 4 sσ in the presence of a spectator, nonbonding Mn 3 d5 ( 6S) open core.

  3. Probing the band structure and local electronic properties of low-dimensional semiconductor structures

    NASA Astrophysics Data System (ADS)

    Walrath, Jenna Cherie

    Low-dimensional semiconductor structures are important for a wide variety of applications, and recent advances in nanoscale fabrication are paving the way for increasingly precise nano-engineering of a wide range of materials. It is therefore essential that the physics of materials at the nanoscale are thoroughly understood to unleash the full potential of nanotechnology, requiring the development of increasingly sophisticated instrumentation and modeling. Of particular interest is the relationship between the local density of states (LDOS) of low-dimensional structures and the band structure and local electronic properties. This dissertation presents the investigation of the band structure, LDOS, and local electronic properties of nanostructures ranging from zero-dimensional (0D) quantum dots (QDs) to two-dimensional (2D) thin films, synthesizing computational and experimental approaches including Poisson-Schrodinger band structure calculations, scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and scanning thermoelectric microscopy (SThEM). A method is presented for quantifying the local Seebeck coefficient (S) with SThEM, using a quasi-3D conversion matrix approach to directly convert temperature gradient-induced voltages S. For a GaAs p-n junction, the resulting S-profile is consistent with that computed using the free carrier concentration profile. This combined computational-experimental approach is expected to enable nanoscale measurements of S across a wide variety of heterostructure interfaces. The local carrier concentration, n, is profiled across epitaxial InAs/GaAs QDs, where SThEM is used to profile the temperature gradient-induced voltage, which is converted to a profile of the local S and finally to an n profile. The S profile is converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. The combined computational-experimental approach suggests a reduced n in the QD center in

  4. Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom

    DOEpatents

    Gupta, Sandhya; Tuttle, Gary L.; Sigalas, Mihail; McCalmont, Jonathan S.; Ho, Kai-Ming

    2001-08-14

    A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

  5. Multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution as a mechanism to generate intermediate band energy levels

    NASA Astrophysics Data System (ADS)

    Rodríguez-Magdaleno, K. A.; Pérez-Álvarez, R.; Martínez-Orozco, J. C.; Pernas-Salomón, R.

    2017-04-01

    In this work the generation of an intermediate band of energy levels from multi-shell spherical GaAs /AlxGa1-x As quantum dot shells-size distribution is reported. Within the effective mass approximation the electronic structure of a GaAs spherical quantum-dot surrounded by one, two and three shells is studied in detail using a numerically stable transfer matrix method. We found that a shells-size distribution characterized by continuously wider GaAs domains is a suitable mechanism to generate the intermediate band whose width is also dependent on the Aluminium concentration x. Our results suggest that this effective mechanism can be used for the design of wider intermediate band than reported in other quantum systems with possible solar cells enhanced performance.

  6. Surface soil moisture retrieval over a Mediterranean semi-arid region using X-band TerraSAR-X SAR data

    NASA Astrophysics Data System (ADS)

    Azza, Gorrab; Zribi, Mehrez; Baghdadi, Nicolas; Mougenot, Bernard; Boulet, Gilles; Lili-Chabaane, Zohra

    2015-04-01

    Mapping surface soil moisture with meter-scale spatial resolution is appropriate for multi- domains particularly hydrology and agronomy. It allows water resources and irrigation management decisions, drought monitoring and validation of multi-hydrological water balance models. In the last years, various studies have demonstrated the large potential of radar remote sensing data, mainly from C frequency band, to retrieve soil moisture. However, the accuracy of the soil moisture estimation, by inversing backscattering radar coefficients (σ°), is affected by the influence of surface roughness and vegetation biomass contributions. In recent years, different empirical, semi empirical and physical approaches are developed for bare soil conditions, to estimate accurately spatial soil moisture variability. In this study, we propose an approach based on the change detection method for the retrieval of surface soil moisture at a higher spatial resolution. The proposal algorithm combines multi-temporal X-band SAR images (TerraSAR-X) with different continuous thetaprobe measurements. Seven thetaprobe stations are installed at different depths over the central semi arid region of Tunisia (9°23' - 10°17' E, 35° 1'-35°55' N). They cover approximately the entire of our study site and provide regional scale information. Ground data were collected over agricultural bare soil fields simultaneously to various TerraSAR-X data acquired during 2013-2014 and 2014-2015. More than fourteen test fields were selected for each spatial acquisition campaign, with variations in soil texture and in surface soil roughness. For each date, we considered the volumetric water content with thetaprobe instrument and gravimetric sampling; we measured also the roughness parameters with pin profilor. To retrieve soil moisture from X-band SAR data, we analyzed statistically the sensitivity between radar measurements and ground soil moisture derived from permanent thetaprobe stations. Our analyses are

  7. Band structure of the quasi two-dimensional purple molybdenum bronze

    NASA Astrophysics Data System (ADS)

    Guyot, H.; Balaska, H.; Perrier, P.; Marcus, J.

    2006-09-01

    The molybdenum purple bronze KMo 6O 17 is quasi two-dimensional (2D) metallic oxide that shows a Peierls transition towards a metallic charge density wave state. Since this specific transition is directly related to the electron properties of the normal state, we have investigated the electronic structure of this bronze at room temperature. The shape of the Mo K1s absorption edge reveals the presence of distorted MoO 6 octahedra in the crystallographic structure. Photoemission experiments evidence a large conduction band, with a bandwidth of 800 meV and confirm the metallic character of this bronze. A wide depleted zone separates the conduction band from the valence band that exhibits a fourfold structure, directly connected to the octahedral symmetry of the Mo sites. The band structure is determined by ARUPS in two main directions of the (0 0 1) Brillouin zone. It exhibits some unpredicted features but corroborates the earlier theoretical band structure and Fermi surface. It confirms the hidden one-dimensionality of KMo 6O 17 that has been proposed to explain the origin of the Peierls transition in this 2D compound.

  8. Location of the valence band maximum in the band structure of anisotropic 1 T'-ReSe2

    NASA Astrophysics Data System (ADS)

    Eickholt, P.; Noky, J.; Schwier, E. F.; Shimada, K.; Miyamoto, K.; Okuda, T.; Datzer, C.; Drüppel, M.; Krüger, P.; Rohlfing, M.; Donath, M.

    2018-04-01

    Transition-metal dichalcogenides (TMDCs) are a focus of current research due to their fascinating optical and electronic properties with possible technical applications. ReSe2 is an interesting material of the TMDC family, with unique anisotropic properties originating from its distorted 1 T structure (1 T '). To develop a fundamental understanding of the optical and electric properties, we studied the underlying electronic structure with angle-resolved photoemission (ARPES) as well as band-structure calculations within the density functional theory (DFT)-local density approximation (LDA) and GdW approximations. We identified the Γ ¯M¯1 direction, which is perpendicular to the a axis, as a distinct direction in k space with the smallest bandwidth of the highest valence band. Using photon-energy-dependent ARPES, two valence band maxima are identified within experimental limits of about 50 meV: one at the high-symmetry point Z , and a second one at a non-high-symmetry point in the Brillouin zone. Thus, the position in k space of the global valence band maximum is undecided experimentally. Theoretically, an indirect band gap is predicted on a DFT-LDA level, while quasiparticle corrections lead to a direct band gap at the Z point.

  9. Structural and optical properties of electron-beam-evaporated ZnSe 1- x Te x Ternary compounds with various Te contents

    NASA Astrophysics Data System (ADS)

    Suthagar, J.; Suthan Kissinger, N. J.; Sharli Nath, G. M.; Perumal, K.

    2014-01-01

    ZnSe1- x Te x films with different tellurium (Te) contents were deposited by using an electron beam (EB) evaporation technique onto glass substrates for applications to optoelectronic devices. The structural and the optical properties of the ZnSe1- x Te x films were studied in the present work. The host material ZnSe1- x Te x , were prepared by using the physical vapor deposition method of the electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10-5 mbar. The X-ray diffractogram indicated that these alloy films had cubic structure with a strong preferential orientation of the crystallites along the (1 1 1) direction. The optical properties showed that the band gap (E g ) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the system composition x.

  10. Performance of a Wideband Cadmium Ferrite Microstrip Patch Antenna in the X-Band Region

    NASA Astrophysics Data System (ADS)

    Bhongale, S. R.; Ingavale, H. R.; Shinde, T. J.; Vasambekar, P. N.

    2018-01-01

    Magnesium-substituted cadmium ferrites with the chemical composition Mg x Cd1- x Fe2O4 ( x = 0, 0.4 and 0.8) were prepared by an oxalate co-precipitation method under microwave sintering technique. The structural properties of ferrites were studied by x-ray diffraction, Fourier transform infrared spectroscopy and field emission scanning electron microscope techniques. The scattering parameters such as reflection coefficient ( S 11) and transmission coefficient ( S 21) at microwave frequencies of palletized ferrites were measured by using a vector network analyzer. The software module 85071E followed by scattering parameters was used to determine the electromagnetic properties of the ferrites. The values determined for electromagnetic parameters such as the real part of permittivity ( ɛ'), permeability ( μ'), dielectric loss tangent (tan δ e) and magnetic loss tangent (tan δ m) of synthesized ferrites were used to design rectangular microstrip patch antennas. The performance of magnesium-substituted Cd ferrites as substrate for microstrip patch antennas was investigated. The antenna parameters such as return loss, bandwidth, voltage standing wave ratio, Smith chart and radiation pattern were studied. It is found that the Cd ferrite has applicability as a substrate for wideband antennas in the X-band region.

  11. A common-aperture X- and S-band four-function feedcone. [hornfeed design for antennas of Deep Space Network

    NASA Technical Reports Server (NTRS)

    Withington, J. R.; Williams, W. F.

    1982-01-01

    Williams and Withington (1979) have considered a prototype X-S-band feedhorn which enabled simultaneous X- and S-band reception from a Cassegrain antenna. This feedhorn has quite successfully demonstrated an alternate method to the standard Deep Space Network (DSN) system of multiple subreflectors and dichroic plate for dual-band reception. In connection with a Network Consolidation Program, involving centralized control of existing antennas and construction of new reflector antennas, a second-generation feedhorn/combiner was conceived to show that this common-aperture feedhorn system was capable of performing all necessary functions the DSN would be called upon to perform with existing and future X-S-band spacecraft. Attention is given to the feedhorn concept, the combiner concept, the first and the second generation of the horn, Sand X-band tuning, and planned capabilities. The feedhorn greatly extends the state of the art in DSN performance and will enhance DSN capabilities in the future.

  12. Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I-type-II transition of natural band offsets in nonpolar zinc-blende AlxGa1 -xN /AlyGa1 -yN composites

    NASA Astrophysics Data System (ADS)

    Landmann, M.; Rauls, E.; Schmidt, W. G.

    2017-04-01

    The composition dependence of the natural band alignment at nonpolar AlxGa1 -xN /AlyGa1 -yN heterojunctions is investigated via hybrid functional based density functional theory. Accurate band-gap data are provided using Heyd-Scuseria-Ernzerhof (HSE) type hybrid functionals with a composition dependent exact-exchange contribution. The unstrained band alignment between zincblende (zb) AlxGa1 -xN semiconductor alloys is studied within the entire ternary composition range utilizing the Branch-point technique to align the energy levels related to the bulklike direct Γv→Γc and indirect, pseudodirect, respectively, Γv→Xc type transitions in zb-AlxGa1 -xN . While the zb-GaN/AlxGa1 -xN band edges consistently show a type-I alignment, the relative position of fundamental band edges changes to a type-II alignment in the Al-rich composition ranges of zb-AlxGa1 -xN /AlN and zb-AlxGa1 -xN /AlyGa1 -yN systems. The presence of a direct-indirect band-gap transition at xc=0.63 in zb-AlxGa1 -xN semiconductor alloys gives rise to a notably different composition dependence of band discontinuities in the direct and indirect energy-gap ranges. Below the critical direct-indirect Al/Ga-crossover concentration, the band offsets show a close to linear dependence on the alloy composition. In contrast, notable bowing characteristics of all band discontinuities are observed above the critical crossover composition.

  13. Acoustic band gaps of the woodpile sonic crystal with the simple cubic lattice

    NASA Astrophysics Data System (ADS)

    Wu, Liang-Yu; Chen, Lien-Wen

    2011-02-01

    This study theoretically and experimentally investigates the acoustic band gap of a three-dimensional woodpile sonic crystal. Such crystals are built by blocks or rods that are orthogonally stacked together. The adjacent layers are perpendicular to each other. The woodpile structure is embedded in air background. Their band structures and transmission spectra are calculated using the finite element method with a periodic boundary condition. The dependence of the band gap on the width of the stacked rods is discussed. The deaf bands in the band structure are observed by comparing with the calculated transmission spectra. The experimental transmission spectra for the Γ-X and Γ-X' directions are also presented. The calculated results are compared with the experimental results.

  14. K-Band Si/SiGe HBT MMIC Amplifiers Using Lumped Passive Components with a Micromachined Structure

    NASA Technical Reports Server (NTRS)

    Lu, Liang-Hung; Rieh, Jae-Sung; Bhattacharya, Pallab; Katechi, Linda P. B.; Croke, E. T.; Ponchak, George E.; Alterovitz, Samuel A.

    2000-01-01

    Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92 x 0.67 sq mm.

  15. Elucidation of electronic structure by the analysis of hyperfine interactions: The MnH A 7Π-X 7Sigma + (0,0) band

    NASA Astrophysics Data System (ADS)

    Varberg, Thomas D.; Field, Robert W.; Merer, Anthony J.

    1991-08-01

    We present a complete analysis of the hyperfine structure of the MnH A 7Π-X 7Σ+ (0,0) band near 5680 Å, studied with sub-Doppler resolution by intermodulated fluorescence spectroscopy. Magnetic hyperfine interactions involving both the 55Mn (I=5/2) and 1H (I=1/2) nuclear spins are observed as well as 55Mn electric quadrupole effects. The manganese Fermi contact interaction in the X 7Σ+ state is the dominant contributor to the observed hyperfine splittings; the ΔF=0, ΔN=0, ΔJ=±1 matrix elements of this interaction mix the electron spin components of the ground state quite strongly at low N, destroying the ``goodness'' of J as a quantum number and inducing rotationally forbidden, ΔJ=±2 and ±3 transitions. The hyperfine splittings of over 50 rotational transitions covering all 7 spin components of both states were analyzed and fitted by least squares, allowing the accurate determination of 14 different hyperfine parameters. Using single electronic configurations to describe the A 7Π and X 7Σ+ states and Herman-Skillman atomic radial wave functions to represent the molecular orbitals, we calculated a priori values for the 55Mn and 1H hyperfine parameters which agree closely with experiment. We show that the five high-spin coupled Mn 3d electrons do not contribute to the manganese hyperfine structure but are responsible for the observed proton magnetic dipolar couplings. Furthermore, the results suggest that the Mn 3d electrons are not significantly involved in bonding and demonstrate that the molecular hyperfine interactions may be quantitatively understood using simple physical interpretations.

  16. Composition dependence of band alignments in GaxIn1-xAsySb1-y heterojunctions lattice matched to GaSb and InAs

    NASA Astrophysics Data System (ADS)

    Shim, Kyurhee

    2013-11-01

    A theoretical model utilizing a universal tight binding method and a correlated function expansion technique is presented to calculate the valence band maximum (VBM) and the conduction band minimum (CBM) of the binary (GaAs, InAS, GaSb, and InSb) and quaternary alloy GaxIn1-xAsySb1-y systems. By organizing the relative positions of the VBM and CBM between semiconductors, the band alignments and band types in the heterojunctions are determined. A straddling (type-I) band alignment in InAs/GaAs, InSb/GaAs, and GaSb/InSb, staggered (type-II) band alignment in GaSb/GaAs, and broken (type-III) band alignment in InSb/InAs and InAs/GaSb are found respectively. In addition, the compositional variations of VBM, CBM, valence band offset, conduction band offset, and band type for the alloy GaxIn1-xAsySb1-y lattice matched on GaSb and InAs are obtained as increasing the composition x. A pronounced upward bowing for the VBM and a very slight upward bowing (almost linear) for CBM are found, respectively. By controlling the compositions (x, y), band type transitions occur. The GaxIn1-xAsySb1-y heterojunctions lattice matched to GaSb changes their band types from type-III at x ˜0→ to type-II at x = 0.07, and → to type-I at x = 0.38. In contrast, the GaxIn1-xAsySb1-y heterojunctions lattice matched to InAs changes their band types from type-II x ˜0→ to type-III at x = 0.32. Reasonable agreement is obtained between our theoretical results and existing experimental data.

  17. NiO: correlated band structure of a charge-transfer insulator.

    PubMed

    Kunes, J; Anisimov, V I; Skornyakov, S L; Lukoyanov, A V; Vollhardt, D

    2007-10-12

    The band structure of the prototypical charge-transfer insulator NiO is computed by using a combination of an ab initio band structure method and the dynamical mean-field theory with a quantum Monte-Carlo impurity solver. Employing a Hamiltonian which includes both Ni d and O p orbitals we find excellent agreement with the energy bands determined from angle-resolved photoemission spectroscopy. This brings an important progress in a long-standing problem of solid-state theory. Most notably we obtain the low-energy Zhang-Rice bands with strongly k-dependent orbital character discussed previously in the context of low-energy model theories.

  18. Labyrinth double split open loop resonator based bandpass filter design for S, C and X-band application

    NASA Astrophysics Data System (ADS)

    Alam, Jubaer; Faruque, Mohammad Rashed Iqbal; Tariqul Islam, Mohammad

    2018-07-01

    Nested circular shaped Labyrinth double split open loop resonators (OLRs) are introduced in this article to design a triple bandpass filter for 3.01 GHz, 7.39 GHz and 12.88 GHz applications. A Rogers RT-5880 is used as a substrate to design the proposed passband filter which has a succinct structure where the attainment of the resonator is explored both integrally and experimentally. The same structure is designed on both sides of the substrate and an analysis is made on the current distribution. Based on the proposed resonator, a bandpass filter is designed and fabricated to justify the perception focusing on 3.01 GHz, 7.39 GHz and 12.88 GHz. It has also been observed by the Nicolson–Ross–Weir approach at the filtering frequencies. The effective electromagnetic parameters retrieved from the simulation of the S-parameters imply that the OLR metamaterial filter shows negative refraction bands. Having an auspicious design and double negative characteristics, this structure is suitable for triple passband filters, particularly for S, C and X-band applications.

  19. Active Narrow-Band Vibration Isolation of Large Engineering Structures

    NASA Technical Reports Server (NTRS)

    Rahman, Zahidul; Spanos, John

    1994-01-01

    We present a narrow-band tracking control method using a variant of the Least Mean Squares (LMS) algorithm to isolate slowly changing periodic disturbances from engineering structures. The advantage of the algorithm is that it has a simple architecture and is relatively easy to implement while it can isolate disturbances on the order of 40-50 dB over decades of frequency band. We also present the results of an experiment conducted on a flexible truss structure. The average disturbance rejection achieved is over 40 dB over the frequency band of 5 Hz to 50 Hz.

  20. Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

    NASA Astrophysics Data System (ADS)

    Jin, Y.; Kharel, P.; Lukashev, P.; Valloppilly, S.; Staten, B.; Herran, J.; Tutic, I.; Mitrakumar, M.; Bhusal, B.; O'Connell, A.; Yang, K.; Huh, Y.; Skomski, R.; Sellmyer, D. J.

    2016-08-01

    The structural, electronic, and magnetic properties of CoFeCrX (X = Si, Ge) Heusler alloys have been investigated. Experimentally, the alloys were synthesized in the cubic L21 structure with small disorder. The cubic phase of CoFeCrSi was found to be highly stable against heat treatment, but CoFeCrGe disintegrated into other new compounds when the temperature reached 402 °C (675 K). Although the first-principle calculation predicted the possibility of tetragonal phase in CoFeCrGe, the tetragonal phase could not be stabilized experimentally. Both CoFeCrSi and CoFeCrGe compounds showed ferrimagnetic spin order at room temperature and have Curie temperatures (TC) significantly above room temperature. The measured TC for CoFeCrSi is 790 K but that of CoFeCrGe could not be measured due to its dissociation into new compounds at 675 K. The saturation magnetizations of CoFeCrSi and CoFeCrGe are 2.82 μB/f.u. and 2.78 μB/f.u., respectively, which are close to the theoretically predicted value of 3 μB/f.u. for their half-metallic phases. The calculated band gaps for CoFeCrSi and CoFeCrGe are, respectively, 1 eV and 0.5 eV. These materials have potential for spintronic device applications, as they exhibit half-metallic electronic structures with large band gaps, and Curie temperatures significantly above room temperature.

  1. The Micro-X Imaging X-Ray Microcalorimeter Sounding Rocket Payload: Final Design and Performance Tests

    NASA Astrophysics Data System (ADS)

    Rutherford, John; Micro-X Collaboration

    2011-09-01

    The first operating set of transition edge sensors (TES) microcalorimeters in space will launch on a sounding rocket carrying the Micro-X imaging X-ray telescope in 2012. We present the final instrument flight design, as well as the results from initial performance tests. A spectral resolution of 2 eV is targeted across the science band of 0.3-2.5 keV. The 12x12 spectrometer array contains 128 active pixels on a 600 micron pitch, consisting of Au/Bi absorbers and Mo/Au bilayer TESs with a transition temperature of 100 mK. A SQUID time-division multiplexer will read out the array at 30 kHz, which is limited by the rocket telemetry. The TESs have been engineered with a 2 ms time constant to match the multiplexer. The detector array and two SQUID stages of the TDM readout system are accommodated in a lightweight Mg enclosure, which is mounted to the 50 mK stage of an adiabatic demagnetization refrigerator. A third SQUID amplification stage is located on the 1.6 K liquid He stage of the cryostat. An on-board 55-Fe source will fluoresce a Ca target, providing 3.7 and 4.0 keV calibration lines that will not interfere with the scientifically interesting energy band.

  2. Study on the Effect of Secondary Banded Structure on the Fatigue Property of Non-Quenched and Tempered Micro Alloyed Steel

    NASA Astrophysics Data System (ADS)

    Yajie, Cheng; Qingliang, Liao; Yue, Zhang

    Due to composition segregation and cooling speed, streamline or banded structure were often obtained in the thermal forming parts along the direction of parts forming. Generally speaking, banded structure doesn't decrease the longitudinal mechanical properties, so the secondary banded structure can't get enough attention. The effect of secondary banded structure on the fatigue properties of micro alloyed DG20Mn and 35CrMo steel was investigated using the axial tensile fatigue test of stress ratio of 0.1. The result shows that secondary banded structure was obtained in the center of the steel parts, because of the composition segregation and the lower cooling rate in center part of steel. Secondary banded structure has no significant effect on axial tensile properties of both DG20Mn and 35CrMo, but decreases the axial tensile fatigue performance of DG20Mn steel. This study suggests that under the high cyclic tensile stress, multi-source damage cracks in steel initiated by large strain of pearlite of secondary banded structure, which is larger than damage strain, is the major factor of the decrease of fatigue life of steel.

  3. Interface energetics and atomic structure of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb:SrTiO{sub 3}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Van Overmeere, Quentin, E-mail: quentin.vanovermeere@uclouvain.be, E-mail: john.d.baniecki@jp.fujitsu.com; Baniecki, John D., E-mail: quentin.vanovermeere@uclouvain.be, E-mail: john.d.baniecki@jp.fujitsu.com; Yamazaki, Takashi

    2015-06-15

    The energetics at oxide semiconductor/La{sub 1−x}Sr{sub x}CoO{sub 3} heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La{sub 1−x}Sr{sub x}CoO{sub 3}-based devices. In this letter, the electronic and atomic structures of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO{sub 3}, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3dmore » states to the VB maximum of the LaCoO{sub 3} thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory.« less

  4. Measuring the band structures of periodic beams using the wave superposition method

    NASA Astrophysics Data System (ADS)

    Junyi, L.; Ruffini, V.; Balint, D.

    2016-11-01

    Phononic crystals and elastic metamaterials are artificially engineered periodic structures that have several interesting properties, such as negative effective stiffness in certain frequency ranges. An interesting property of phononic crystals and elastic metamaterials is the presence of band gaps, which are bands of frequencies where elastic waves cannot propagate. The presence of band gaps gives this class of materials the potential to be used as vibration isolators. In many studies, the band structures were used to evaluate the band gaps. The presence of band gaps in a finite structure is commonly validated by measuring the frequency response as there are no direct methods of measuring the band structures. In this study, an experiment was conducted to determine the band structure of one dimension phononic crystals with two wave modes, such as a bi-material beam, using the frequency response at only 6 points to validate the wave superposition method (WSM) introduced in a previous study. A bi-material beam and an aluminium beam with varying geometry were studied. The experiment was performed by hanging the beams freely, exciting one end of the beams, and measuring the acceleration at consecutive unit cells. The measured transfer function of the beams agrees with the analytical solutions but minor discrepancies. The band structure was then determined using WSM and the band structure of one set of the waves was found to agree well with the analytical solutions. The measurements taken for the other set of waves, which are the evanescent waves in the bi-material beams, were inaccurate and noisy. The transfer functions at additional points of one of the beams were calculated from the measured band structure using WSM. The calculated transfer function agrees with the measured results except at the frequencies where the band structure was inaccurate. Lastly, a study of the potential sources of errors was also conducted using finite element modelling and the errors in

  5. Photonic band edge assisted spontaneous emission enhancement from all Er3+ 1-D photonic band gap structure

    NASA Astrophysics Data System (ADS)

    Chiasera, A.; Meroni, C.; Varas, S.; Valligatla, S.; Scotognella, F.; Boucher, Y. G.; Lukowiak, A.; Zur, L.; Righini, G. C.; Ferrari, M.

    2018-06-01

    All Er3+ doped dielectric 1-D Photonic Band Gap Structure was fabricated by rf-sputtering technique. The structure was constituted by of twenty pairs of SiO2/TiO2 alternated layers doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements put in evidence the stop band in the range 1500 nm-1950 nm. The photoluminescence measurements were obtained by optically exciting the sample and detecting the emitted light in the 1.5 μm region at different detection angles. Luminescence spectra and luminescence decay curves put in evidence that the presence of the stop band modify the emission features of the Er3+ ions.

  6. Ultra-High Gradient S-band Linac for Laboratory and Industrial Applications

    NASA Astrophysics Data System (ADS)

    Faillace, L.; Agustsson, R.; Dolgashev, V.; Frigola, P.; Murokh, A.; Rosenzweig, J.; Yakimenko, V.

    2010-11-01

    A strong demand for high gradient structures arises from the limited real estate available for linear accelerators. RadiaBeam Technologies is developing a Doubled Energy Compact Accelerator (DECA) structure: an S-band standing wave electron linac designed to operate at accelerating gradients of up to 50 MV/m. In this paper, we present the radio-frequency design of the DECA S-band accelerating structure, operating at 2.856 GHz in the π-mode. The structure design is heavily influenced by NLC collaboration experience with ultra high gradient X-band structures; S-band, however, is chosen to take advantage of commonly available high power S-band klystrons.

  7. Tailoring of optical band gap by varying Zn content in Cd{sub 1-x}Zn{sub x}S thin films prepared by spray pyrolysis method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kumar, Vipin, E-mail: vipinkumar28@yahoo.co.in; Sharma, D. K.; Agrawal, Sonalika

    Cd{sub 1-X}Zn{sub X}S thin films (X = 0.2, 0.4, 0.6, 0.8) have been grown on glass substrate by spray pyrolysis technique using equimolar concentration aqueous solution of cadmium chloride, zinc acetate and thiourea. Prepared thin films have been characterized by UV-VIS spectrophotometer. The optical band gap of the films has been studied by transmission spectra in wavelength range 325-600nm. It has been observed that optical band gap increases with increasing zinc concentration. The optical band gap of these thin films varies from 2.59 to 3.20eV with increasing Zn content.

  8. Multichannel X-Band Dielectric-Resonator Oscillator

    NASA Technical Reports Server (NTRS)

    Mysoor, Narayan; Dennis, Matthew; Cook, Brian

    2006-01-01

    A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be

  9. Valence Band Structure of Highly Efficient p-type Thermoelectric PbTe-PbS Alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jaworski, C. M.; Nielsen, Mechele; Wang, Hsin

    New experimental evidence is given relevant to the temperature-dependence of valence band structure of PbTe and PbTe1-xSx alloys (0.04 x 0.12), and its effect on the thermoelectric figure of merit zT. The x = 0.08 sample has zT ~ 1.55 at 773K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (> 1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This put in question prior analyses of the Hall coefficient and the conclusion that PbTe would be an indirect gap semiconductor at temperatures where its zT is optimal. Possible origins for these electrons are discussed:more » they can be induced by photoconductivity, or by the topology of the Fermi surface when the L and -bands merge. Negative values for the low-temperature thermopower are also observed. Our data show that PbTe continues to be a direct gap semiconductor at temperatures where the zT and S2 of p-type PbTe are optimal e.g. 700-900K. The previously suggested temperature induced rapid rise in energy of the heavy hole LVB relative to the light hole UVB is not supported by the experimental data.« less

  10. Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lischner, Johannes, E-mail: jlischner597@gmail.com; Department of Physics and Department of Materials and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London SW7 2AZ; Nemšák, Slavomír

    We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novelmore » solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.« less

  11. Observation of Wakefield Suppression in a Photonic-Band-Gap Accelerator Structure

    DOE PAGES

    Simakov, Evgenya I.; Arsenyev, Sergey A.; Buechler, Cynthia E.; ...

    2016-02-10

    We report experimental observation of higher order mode (HOM) wakefield suppression in a room-temperature traveling-wave photonic band gap (PBG) accelerating structure at 11.700 GHz. It has been long recognized that PBG structures have potential for reducing long-range wakefields in accelerators. The first ever demonstration of acceleration in a room-temperature PBG structure was conducted in 2005. Since then, the importance of PBG accelerator research has been recognized by many institutions. However, the full experimental characterization of the wakefield spectrum and demonstration of wakefield suppression when the accelerating structure is excited by an electron beam has not been performed to date. Wemore » conducted an experiment at the Argonne Wakefield Accelerator (AWA) test facility and observed wakefields excited by a single high charge electron bunch when it passes through a PBG accelerator structure. Lastly, excellent HOM suppression properties of the PBG accelerator were demonstrated in the beam test.« less

  12. A physical parameter method for the design of broad-band X-ray imaging systems to do coronal plasma diagnostics

    NASA Technical Reports Server (NTRS)

    Kahler, S.; Krieger, A. S.

    1978-01-01

    The technique commonly used for the analysis of data from broad-band X-ray imaging systems for plasma diagnostics is the filter ratio method. This requires the use of two or more broad-band filters to derive temperatures and line-of-sight emission integrals or emission measure distributions as a function of temperature. Here an alternative analytical approach is proposed in which the temperature response of the imaging system is matched to the physical parameter being investigated. The temperature response of a system designed to measure the total radiated power along the line of sight of any coronal structure is calculated. Other examples are discussed.

  13. 4. COMPLETE X15 VEHICLE TEST STAND, DETAIL OF THRUST MOUNTING ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    4. COMPLETE X-15 VEHICLE TEST STAND, DETAIL OF THRUST MOUNTING STRUCTURE AT ENGINE END OF PLANE. - Edwards Air Force Base, X-15 Engine Test Complex, Rocket Engine & Complete X-15 Vehicle Test Stands, Rogers Dry Lake, east of runway between North Base & South Base, Boron, Kern County, CA

  14. Band alignment and charge transfer predictions of ZnO/ZnX (X = S, Se or Te) interfaces applied to solar cells: a PBE+U theoretical study.

    PubMed

    Flores, Efracio Mamani; Gouvea, Rogério Almeida; Piotrowski, Maurício Jeomar; Moreira, Mário Lucio

    2018-02-14

    The engineering of semiconductor materials for the development of solar cells is of great importance today. Two topics are considered to be of critical importance for the efficiency of Grätzel-type solar cells, the efficiency of charge separation and the efficiency of charge carrier transfer. Thus, one research focus is the combination of semiconductor materials with the aim of reducing charge recombination, which occurs by spatial charge separation. From an experimental point of view, the combining of materials can be achieved by decorating a core with a shell of another material resulting in a core-shell system, which allows control of the desired photoelectronic properties. In this context, a computational simulation is mandatory for the atomistic understanding of possible semiconductor combinations and for the prediction of their properties. Considering the construction of ZnO/ZnX (X = S, Se or Te) interfaces, we seek to investigate the electronic influence of the shell (ZnX) on the core (ZnO) and, consequently, find out which of the interfaces would present the appropriate properties for (Grätzel-type) solar cell applications. To perform this study, we have employed density functional theory (DFT) calculations, considering the Perdew-Burke-Ernzerhof (PBE) functional. However, it is well-known that plain DFT fails to describe strong electronic correlated materials where, in general, an underestimation of the band gap is obtained. Thus, to obtain the correct description of the electronic properties, a Hubbard correction was employed, i.e. PBE+U calculations. The PBE+U methodology provided the correct electronic structure properties for bulk ZnO in good agreement with experimental values (99.4%). The ZnO/ZnX interfaces were built and were composed of six ZnO layers and two ZnX layers, which represents the decoration process. The core-shell band gap was 2.2 eV for ZnO/ZnS, ∼1.71 eV for ZnO/ZnSe and ∼0.95 eV for ZnO/ZnTe, which also exhibited a type-II band

  15. Towards coherent combining of X-band high power microwaves: phase-locked long pulse radiations by a relativistic triaxial klystron amplifier.

    PubMed

    Ju, Jinchuan; Zhang, Jun; Qi, Zumin; Yang, Jianhua; Shu, Ting; Zhang, Jiande; Zhong, Huihuang

    2016-08-02

    The radio-frequency breakdown due to ultrahigh electric field strength essentially limits power handling capability of an individual high power microwave (HPM) generator, and this issue becomes more challenging for high frequency bands. Coherent power combining therefore provides an alternative approach to achieve an equivalent peak power of the order of ∼100 GW, which consequently provides opportunities to explore microwave related physics at extremes. The triaxial klystron amplifier (TKA) is a promising candidate for coherent power combing in high frequency bands owing to its intrinsic merit of high power capacity, nevertheless phase-locked long pulse radiation from TKA has not yet been obtained experimentally as the coaxial structure of TKA can easily lead to self-excitation of parasitic modes. In this paper, we present investigations into an X-band TKA capable of producing 1.1 GW HPMs with pulse duration of about 103 ns at the frequency of 9.375 GHz in experiment. Furthermore, the shot-to-shot fluctuation standard deviation of the phase shifts between the input and output microwaves is demonstrated to be less than 10°. The reported achievements open up prospects for accomplishing coherent power combining of X-band HPMs in the near future, and might also excite new development interests concerning high frequency TKAs.

  16. Polarization-dependent diffraction in all-dielectric, twisted-band structures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kardaś, Tomasz M.; Jagodnicka, Anna; Wasylczyk, Piotr, E-mail: pwasylcz@fuw.edu.pl

    2015-11-23

    We propose a concept for light polarization management: polarization-dependent diffraction in all-dielectric microstructures. Numerical simulations of light propagation show that with an appropriately configured array of twisted bands, such structures may exhibit zero birefringence and at the same time diffract two circular polarizations with different efficiencies. Non-birefringent structures as thin as 3 μm have a significant difference in diffraction efficiency for left- and right-hand circular polarizations. We identify the structural parameters of such twisted-band matrices for optimum performance as circular polarizers.

  17. Band gap structures for 2D phononic crystals with composite scatterer

    NASA Astrophysics Data System (ADS)

    Qi, Xiao-qiao; Li, Tuan-jie; Zhang, Jia-long; Zhang, Zhen; Tang, Ya-qiong

    2018-05-01

    We investigated the band gap structures in two-dimensional phononic crystals with composite scatterer. The composite scatterers are composed of two materials (Bragg scattering type) or three materials (locally resonance type). The finite element method is used to calculate the band gap structure, eigenmodes and transmission spectrum. The variation of the location and width of band gap are also investigated as a function of material ratio in the scatterer. We have found that the change trends the widest band gap of the two phononic crystals are different as the material ratio changing. In addition to this, there are three complete band gaps at most for the Bragg-scattering-type phononic crystals in the first six bands; however, the locally resonance-type phononic crystals exist only two complete band gap at most in the first six bands. The gap-tuning effect can be controlled by the material ratio in the scatterer.

  18. Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures.

    PubMed

    Warmuth, Franziska; Körner, Carolin

    2015-12-02

    The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented.

  19. Preliminary Analysis of X-Band and Ka-Band Radar for Use in the Detection of Icing Conditions Aloft

    NASA Technical Reports Server (NTRS)

    Reehorst, Andrew L.; Koenig, George G.

    2004-01-01

    NASA and the U.S. Army Cold Regions Research and Engineering Laboratory (CRREL) have an on-going activity to develop remote sensing technologies for the detection and measurement of icing conditions aloft. Radar has been identified as a strong tool for this work. However, since the remote detection of icing conditions with the intent to identify areas of icing hazard is a new and evolving capability, there are no set requirements for radar sensitivity. This work is an initial attempt to quantify, through analysis, the sensitivity requirements for an icing remote sensing radar. The primary radar of interest for cloud measurements is Ka-band, however, since NASA is currently using an X-band unit, this frequency is also examined. Several aspects of radar signal analysis were examined. Cloud reflectivity was calculated for several forms of cloud using two different techniques. The Air Force Geophysical Laboratory (AFGL) cloud models, with different drop spectra represented by a modified gamma distribution, were utilized to examine several categories of cloud formation. Also a fundamental methods approach was used to allow manipulation of the cloud droplet size spectra. And an analytical icing radar simulator was developed to examine the complete radar system response to a configurable multi-layer cloud environment. Also discussed is the NASA vertical pointing X-band radar. The radar and its data system are described, and several summer weather events are reviewed.

  20. The Cryogenic AntiCoincidence detector for ATHENA X-IFU: a scientific assessment of the observational capabilities in the hard X-ray band

    NASA Astrophysics Data System (ADS)

    D'Andrea, M.; Lotti, S.; Macculi, C.; Piro, L.; Argan, A.; Gatti, F.

    2017-12-01

    ATHENA is a large X-ray observatory, planned to be launched by ESA in 2028 towards an L2 orbit. One of the two instruments of the payload is the X-IFU: a cryogenic spectrometer based on a large array of TES microcalorimeters, able to perform integral field spectrography in the 0.2-12 keV band (2.5 eV FWHM at 6 keV). The X-IFU sensitivity is highly degraded by the particle background expected in the L2 orbit, which is induced by primary protons of both galactic and solar origin, and mostly by secondary electrons. To reduce the particle background level and enable the mission science goals, the instrument incorporates a Cryogenic AntiCoincidence detector (CryoAC). It is a 4 pixel TES based detector, placed < 1 mm below the main array. In this paper we report a scientific assessment of the CryoAC observational capabilities in the hard X-ray band (E > 10 keV). The aim of the study has been to understand if the present detector design can be improved in order to enlarge the X-IFU scientific capability on an energy band wider than the TES array. This is beyond the CryoAC baseline, being this instrument aimed to operate as anticoincidence particle detector and not conceived to perform X-ray observations.

  1. Influence of compositional variation on structural, electrical and magnetic characteristics of (Ba1-x Gd) (Ti1-x Fe x ) O3 (0.2 ≤ x ≤ 0.5)

    NASA Astrophysics Data System (ADS)

    Sahoo, Sushrisangita; Mahapatra, P. K.; Choudhary, R. N. P.; Alagarsamy, Perumal

    2018-01-01

    The effect of composition variation of (Ba1-x Gd x )(Ti1-x Fe x )O3 (0.2 ≤ x ≤ 0.5) on structural, optical, electrical and multiferroic properties was investigated. The polycrystalline samples were fabricated by a chemico-thermal route. While the compound with composition x ≤ 0.3 has a tetragonal structure akin to BaTiO3, the higher compositions (x > 0.3) crystallize in a mixed phase of the tetragonal and orthorhombic structure. The different polarization mechanisms in the compound were analyzed on the basis of ferroelectric-paraelectric phase transition at 120 °C, magnetic reorientation mediated by Gd3+ ↔ Fe3+ exchange interaction at 200 °C and that induced by antiferromagnetic ordering mediated through the Fe3+ ↔ Fe3+ exchange interactions at 380 °C. Analysis of ac conductivity on the basis of Jonscher’s power law indicates the presence of correlated barrier hopping conduction mechanism in the samples. Among the studied samples, the composition with x = 0.3 exhibiting improved material properties like lower optical band gap and higher optical absorption, high dielectric constant (830 at room temperature and peak value of 3944 at 160 °C and 6478 at 377.5 °C), and the room temperature ME coefficient of 1.53 mV cm-1 Oe-1 have promising technological applications.

  2. Rectifying behavior in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure

    NASA Astrophysics Data System (ADS)

    Wang, Caiwei; Jiang, Yang; Ma, Ziguang; Zuo, Peng; Yan, Shen; Die, Junhui; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2018-05-01

    Rectifying characteristics induced by the polarization fields are achieved in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure (DHS). By grading AlxGa1‑xN from x  =  0.4(0.3) to 0.1, the DHS displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. The mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. The band gap narrowing caused by decreasing Al composition could compensate the for the band tilt due to the polarization effect in AlxGa1‑xN barriers, thus lowering the barrier height for electron transport from top to bottom. The reverse rectifying behavior could be enhanced by increasing the Al content and the thickness of the multi-layer graded AlxGa1‑xN barriers. This work gives a better understanding of the mechanism of carrier transport in a DHS and makes it possible to realize novel GaN-based heterojunction transistors.

  3. The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy

    NASA Astrophysics Data System (ADS)

    Zhao, Chuan-Zhen; Zhu, Min-Min; Wang, Jun; Wang, Sha-Sha; Lu, Ke-Qing

    2018-05-01

    The research on the temperature dependence of the band gap energy of the dilute bismuth GaBixAs1-x alloy has been done. It is found that its temperature insensitiveness is due to the enhanced localized character of the valence band state and the small decrease of the temperature coefficient for the conduction band minimum (CBM). The enhanced localized character of the valence band state is the main factor. In order to describe the localized effect of the Bi levels on the valence band, the localized energy is introduced into the Varshni's equation. It is found that the effect of the localized Bi level on the valence band becomes strong with increasing Bi content. In addition, it is found that the pressure dependence of the band gap energy of GaBixAs1-x does not seem to be influenced by the localized Bi levels. It is due to two factors. One is that the pressure dependence of the band gap energy is mainly determined by the D CBM of GaBixAs1-x. The D CBM of GaBixAs1-x is not influenced by the localized Bi levels. The other is that the small variation of the pressure coefficient for the D valence band maximum (VBM) state of GaBixAs1-x can be cancelled by the variation of the pressure coefficient for the D CBM state of GaBixAs1-x.

  4. Ab initio calculations of the structural, electronic, thermodynamic and thermal properties of BaSe1-x Te x alloys

    NASA Astrophysics Data System (ADS)

    Drablia, S.; Boukhris, N.; Boulechfar, R.; Meradji, H.; Ghemid, S.; Ahmed, R.; Omran, S. Bin; El Haj Hassan, F.; Khenata, R.

    2017-10-01

    The alkaline earth metal chalcogenides are being intensively investigated because of their advanced technological applications, for example in photoluminescent devices. In this study, the structural, electronic, thermodynamic and thermal properties of the BaSe1-x Te x alloys at alloying composition x = 0, 0.25, 0.50, 0.75 and 1 are investigated. The full potential linearized augmented plane wave plus local orbital method designed within the density functional theory was used to perform the total energy calculations. In this research work the effect of the composition on the results of the parameters and bulk modulus as well as on the band gap energy is analyzed. From our results, we found a deviation of the obtained results for the lattice constants from Vegard’s law as well as a deviation of the value of the bulk modulus from the linear concentration dependence. We also carried out a microscopic analysis of the origin of the band gap energy bowing parameter. Furthermore, the thermodynamic stability of the considered alloys was explored through the measurement of the miscibility critical temperature. The quasi-harmonic Debye model, as implemented in the Gibbs code, was used to predict the thermal properties of the BaSe1-x Te x alloys, and these investigations comprise our first theoretical predictions concerning the BaSe1-x Te x alloys.

  5. Structural characteristics of Mg-doped (1-x)(K0.5Na0.5)NbO3-xLiSbO3 lead-free ceramics as revealed by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Zhu, W. L.; Zhu, J. L.; Meng, Y.; Wang, M. S.; Zhu, B.; Zhu, X. H.; Zhu, J. G.; Xiao, D. Q.; Pezzotti, G.

    2011-12-01

    This paper presents a Raman spectroscopic study of compositional-change-induced structure variation and of the related mechanism of Mg doping in LiSbO3 (LS)-modified (K0.5Na0.5)NbO3 (KNN) ceramics. With increasing LS content from 0 to 0.06, a discontinuous shift towards higher wavenumbers was found for the band position of the A1g(v1) stretching mode of KNN, accompanied by a clearly nonlinear broadening of this band and a decrease in its intensity. Such morphological changes in the Raman spectrum result from two factors: (i) changes in polarizability/binding strength of the O-Nb-O vibration upon incorporation of Li ions in the KNN perovskitic structure and (ii) a polymorphic phase transition (PPT) from orthorhombic to tetragonal (O → T) phase at x > 0.04. Upon increasing the amount, w, of Mg dopant incorporated into the (1-x)KNN-xLS ceramic structure, the intensity of the Raman bands are enhanced, while the peak position and the full width at half maximum of the A1g(v1) mode was found to experience a clear dependence on both w and x. Raman characterization revealed that the mechanism of Mg doping is strongly correlated with the concentration of Li in the perovskite structure: Mg2+ ions will preferentially replace Li+ ions for low Mg doping while replace K/Na ions for higher doping of Mg. The PPT O → T was also found to be altered by the introduction of Mg and the critical value of LS concentration, xO-T, for incipient O → T transition in the KNN-xLS-wMT system was strongly dependent on Mg content, with xO → T being roughly equal to 0.04 + 2w, for the case of dilute Mg alloying.

  6. Quasiparticle band structure of rocksalt-CdO determined using maximally localized Wannier functions.

    PubMed

    Dixit, H; Lamoen, D; Partoens, B

    2013-01-23

    CdO in the rocksalt structure is an indirect band gap semiconductor. Thus, in order to determine its band gap one needs to calculate the complete band structure. However, in practice, the exact evaluation of the quasiparticle band structure for the large number of k-points which constitute the different symmetry lines in the Brillouin zone can be an extremely demanding task compared to the standard density functional theory (DFT) calculation. In this paper we report the full quasiparticle band structure of CdO using a plane-wave pseudopotential approach. In order to reduce the computational effort and time, we make use of maximally localized Wannier functions (MLWFs). The MLWFs offer a highly accurate method for interpolation of the DFT or GW band structure from a coarse k-point mesh in the irreducible Brillouin zone, resulting in a much reduced computational effort. The present paper discusses the technical details of the scheme along with the results obtained for the quasiparticle band gap and the electron effective mass.

  7. First principles examination of electronic structure and optical features of 4H-GaN1-xPx polytype alloys

    NASA Astrophysics Data System (ADS)

    Laref, A.; Hussain, Z.; Laref, S.; Yang, J. T.; Xiong, Y. C.; Luo, S. J.

    2018-04-01

    By using first-principles calculations, we compute the electronic band structures and typical aspects of the optical spectra of hexagonally structured GaN1-xPx alloys. Although a type III-V semiconductor, GaP commonly possesses a zinc-blende structure with an indirect band gap; as such, it may additionally form hexagonal polytypes under specific growth conditions. The electronic structures and optical properties are calculated by combining a non-nitride III-V semiconductor and a nitride III-V semiconductor, as GaP and GaN crystallizing in a 4H polytype, with the N composition ranging between x = 0-1. For all studied materials, the energy gap is found to be direct. The optical properties of the hexagonal materials may illustrate the strong polarization dependence owing to the crystalline anisotropy. This investigation for GaN1-xPx alloys is anticipated to supply paramount information for applications in the visible/ultraviolet spectral regions. At a specific concentration, x, these alloys would be exclusively appealing candidates for solar-cell applications.

  8. Design concepts and performance of NASA X-band (7162 MHz/8415 MHz) transponder for deep-space spacecraft applications

    NASA Technical Reports Server (NTRS)

    Mysoor, N. R.; Perret, J. D.; Kermode, A. W.

    1991-01-01

    The design concepts and measured performance characteristics are summarized of an X band (7162 MHz/8415 MHz) breadboard deep space transponder (DSP) for future spacecraft applications, with the first use scheduled for the Comet Rendezvous Asteroid Flyby (CRAF) and Cassini missions in 1995 and 1996, respectively. The DST consists of a double conversion, superheterodyne, automatic phase tracking receiver, and an X band (8415 MHz) exciter to drive redundant downlink power amplifiers. The receiver acquires and coherently phase tracks the modulated or unmodulated X band (7162 MHz) uplink carrier signal. The exciter phase modulates the X band (8415 MHz) downlink signal with composite telemetry and ranging signals. The receiver measured tracking threshold, automatic gain control, static phase error, and phase jitter characteristics of the breadboard DST are in good agreement with the expected performance. The measured results show a receiver tracking threshold of -158 dBm and a dynamic signal range of 88 dB.

  9. Study of crystal structure and unique photoluminescence properties of Eu2-xFexO3 (x = 0 - 0.5) orthoferrites

    NASA Astrophysics Data System (ADS)

    Dhilip, M.; Anbarasu, V.; Kumar, K. Saravana; Sivakumar, K.

    2018-04-01

    A series of Europium orthoferrites, Eu2-xFexO3 (x = 0 - 0.5) are successfully prepared by employing solid state reaction technique. The structural analysis through powder X-Ray diffraction technique reveals the multiphase formation of all the prepared compounds. Further, the unit cell visualization of all the prepared compounds confirms the change of crystal structure from cubic to orthorhombic phase. The crystal structure analysis confirms the typical framework of Eu - Fe - O chains with unprecedented ratio of Eu3+ and Fe3+ ions. The optical properties of prepared compounds are investigated using photoluminescence (PL) analysis. Upon excitation at 495 nm wavelength, the emission spectrum of prepared compounds exhibits a broad band in the range of 500-700nm with maximum intensity peak at 548 nm (Blue - 2.26eV). Hence, the substitution of Fe3+ ion yields with intrinsic blue photoluminescence (5D0 → 7F0) of Eu3+ and is easily shielded by the substitution of Fe3+ which may be due to the closer conduction band gap of Eu3+ (2.26 eV) with Fe3+ (2.67 eV). The schematic energy level diagram for Fe3+ in the Eu3+ host matrix has been proposed for the better understanding of photoluminescence processes. The variation of intensity of PL peak between 500 and 700 nm for the substitution of Fe in the range of x = 0 - 0.5 yields with interesting optical properties for exploring new phosphor materials for optoelectronic device fabrications.

  10. Large-area synthesis of monolayered MoS(2(1-x))Se(2x) with a tunable band gap and its enhanced electrochemical catalytic activity.

    PubMed

    Yang, Lei; Fu, Qi; Wang, Wenhui; Huang, Jian; Huang, Jianliu; Zhang, Jingyu; Xiang, Bin

    2015-06-21

    "Band gap engineering" in two-dimensional (2D) materials plays an important role in tailoring their physical and chemical properties. The tuning of the band gap is typically achieved by controlling the composition of the semiconductor alloys. However, large-area preparation of 2D alloys remains a major challenge. Here, we report the large-area synthesis of high-quality monolayered MoS2(1-x)Se2x with a size coverage of hundreds of microns using a chemical vapor deposition method. The photoluminescence (PL) spectroscopy results confirm the tunable band gap in MoS2(1-x)Se2x, which is modulated by varying the Se content. Atomic-scale analysis was performed and the chemical composition was characterized using high-resolution scanning transmission electron microscopy and X-ray photoemission spectroscopy. With the introduction of Se into monolayered MoS2, it leads to enhanced catalytic activity in an electrochemical reaction for hydrogen generation, compared to monolayered MoS2 and MoSe2. It is promising as a potential alternative to expensive noble metals.

  11. Band structure engineering strategies of metal oxide semiconductor nanowires and related nanostructures: A review

    NASA Astrophysics Data System (ADS)

    Piyadasa, Adimali; Wang, Sibo; Gao, Pu-Xian

    2017-07-01

    The electronic band structure of a solid state semiconductor determines many of its physical and chemical characteristics such as electrical, optical, physicochemical, and catalytic activity. Alteration or modification of the band structure could lead to significant changes in these physical and chemical characteristics, therefore we introduce new mechanisms of creating novel solid state materials with interesting properties. Over the past three decades, research on band structure engineering has allowed development of various methods to modify the band structure of engineered materials. Compared to bulk counterparts, nanostructures generally exhibit higher band structure modulation capabilities due to the quantum confinement effect, prominent surface effect, and higher strain limit. In this review we will discuss various band structure engineering strategies in semiconductor nanowires and other related nanostructures, mostly focusing on metal oxide systems. Several important strategies of band structure modulation are discussed in detail, such as doping, alloying, straining, interface and core-shell nanostructuring.

  12. Study on structural and optical properties of α-(AlxCr1-x)2O3 (0 ≤ x ≤ 1) solid solutions

    NASA Astrophysics Data System (ADS)

    Jangir, Ravindra; Kumar, Dharmendra; Srihari, Velaga; Ganguli, Tapas

    2018-04-01

    We report on structural and optical properties for ternary α-(AlxCr1-x)2O3 (0 ≤ x ≤ 1) solid solutions synthesized by using solid sate reaction method. Single R-3c phase was obtained for the Aluminum composition of 0 ≤ x ≤ 1. Due to difference in the ionic radia of Al3+ and Cr3+, in plane lattice parameter showed deviation from the vegard's law. Optical absorption spectra for the solid solutions showed a blue shift of ˜ 0.5 eV in the optical gap. It has also been observed that Cr 3d level shifted towards the O 2p level in the valance band which indicates the enhancement of hybridization in the d and p levels, which is related to the delocalization of hole states, responsible for p-type conduction in wide band gap semiconductors. The results suggests that ternary α-(AlxCr1-x)2O3 (0 ≤ x ≤ 1) can be useful in the field of UV transparent electronics and UV photodetectors.

  13. Computer-automated evolution of an X-band antenna for NASA's Space Technology 5 mission.

    PubMed

    Hornby, Gregory S; Lohn, Jason D; Linden, Derek S

    2011-01-01

    Whereas the current practice of designing antennas by hand is severely limited because it is both time and labor intensive and requires a significant amount of domain knowledge, evolutionary algorithms can be used to search the design space and automatically find novel antenna designs that are more effective than would otherwise be developed. Here we present our work in using evolutionary algorithms to automatically design an X-band antenna for NASA's Space Technology 5 (ST5) spacecraft. Two evolutionary algorithms were used: the first uses a vector of real-valued parameters and the second uses a tree-structured generative representation for constructing the antenna. The highest-performance antennas from both algorithms were fabricated and tested and both outperformed a hand-designed antenna produced by the antenna contractor for the mission. Subsequent changes to the spacecraft orbit resulted in a change in requirements for the spacecraft antenna. By adjusting our fitness function we were able to rapidly evolve a new set of antennas for this mission in less than a month. One of these new antenna designs was built, tested, and approved for deployment on the three ST5 spacecraft, which were successfully launched into space on March 22, 2006. This evolved antenna design is the first computer-evolved antenna to be deployed for any application and is the first computer-evolved hardware in space.

  14. X-Band Radar for Studies of Tropical Storms from High Altitude UAV Platform

    NASA Technical Reports Server (NTRS)

    Rodriquez, Shannon; Heymsfield, Gerald; Li, Lihua; Bradley, Damon

    2007-01-01

    The increased role of unmanned aerial vehicles (UAV) in NASA's suborbital program has created a strong interest in the development of instruments with new capabilities, more compact sizes and reduced weights than the instruments currently operated on manned aircrafts. There is a strong demand and tremendous potential for using high altitude UAV (HUAV) to carry weather radars for measurements of reflectivity and wind fields from tropical storms. Tropical storm genesis frequently occurs in ocean regions that are inaccessible to piloted aircraft due to the long off shore range and the required periods of time to gather significant data. Important factors of interest for the study of hurricane genesis include surface winds, profiled winds, sea surface temperatures, precipitation, and boundary layer conditions. Current satellite precipitation and surface wind sensors have resolutions that are too large and revisit times that are too infrequent to study this problem. Furthermore, none of the spaceborne sensors measure winds within the storm itself. A dual beam X-band Doppler radar, UAV Radar (URAD), is under development at the NASA Goddard Space Flight Center for the study of tropical storms from HUAV platforms, such as a Global Hawk. X-band is the most desirable frequency for airborne weather radars since these can be built in a relatively compact size using off-the-shelf components which cost significantly less than other higher frequency radars. Furthermore, X-band radars provide good sensitivity with tolerable attenuation in storms. The low-cost and light-weight URAD will provide new capabilities for studying hurricane genesis by analyzing the vertical structure of tropical cyclones as well as 3D reflectivity and wind fields in clouds. It will enable us to measure both the 3D precipitation structure and surface winds by using two antenna beams: fixed nadir and conical scanning each produced by its associated subsystem. The nadir subsystem is a magnetron based radar

  15. X-ray absorption fine structure and X-ray excited optical luminescence studies of II-VI semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Murphy, Michael Wayne

    2010-06-01

    Various II-VI semiconducting nanomaterials such as ZnO-ZnS nanoribbons (NRs), CdSxSe1-x nanostructures, ZnS:Mn NRs, ZnS:Mn,Eu nanoprsims (NPs), ZnO:Mn nanopowders, and ZnO:Co nanopowders were synthesized for study. These materials were characterized by techniques such as scanning electron microscopy, transmission electron microscopy, element dispersive X-ray spectroscopy, selected area electron diffraction, and X-ray diffraction. The electronic and optical properties of these nanomaterials were studied by X-ray absorption fine structure (XAFS) spectroscopy and X-ray excited optical luminescence (XEOL) techniques, using tuneable soft X-rays from a synchrotron light source. The complementary nature ofthe XAFS and XEOL techniques give site, element and chemical specific measurements which allow a better understanding of the interplay and role of each element in the system. Chemical vapour deposition (CVD) of ZnS powder in a limited oxygen environment resulted in side-by-side biaxial ZnO-ZnS NR heterostructures. The resulting NRs contained distinct wurtzite ZnS and wurtzite ZnO components with widths of 10--100 nm and 20 --500 nm, respectively and a uniform interface region of 5-15 nm. XAFS and XEOL measurements revealed the luminescence of ZnO-ZnS NRs is from the ZnO component. The luminescence of CdSxSe1-x nanostructures is shown to be dependent on the S to Se ratio, with the band-gap emission being tunable between that of pure CdS and CdSe. Excitation of the CdSxSe 1-x nanostructures by X-ray in XEOL has revealed new de-excitation channels which show a defect emission band not seen by laser excitation. CVD of Mn2+ doped ZnS results in nanostructures with luminescence dominated by the yellow Mn2+ emission due to energy transfer from the ZnS host to the Mn dopant sites. The addition of EuCl3 to the reactants in the CVD process results in a change in morphology from NR to NP. Zn1-xMnxO and Zn1-xCOxO nanopowders were prepared by sol-gel methods at dopant concentrations

  16. Fine structure of the red luminescence band in undoped GaN

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Reshchikov, M. A., E-mail: mreshchi@vcu.edu; Usikov, A.; Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101 Saint Petersburg

    2014-01-20

    Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of the RLmore » band fine structure indicate that the RL band is caused by transitions from a shallow donor (at low temperature) or from the conduction band (above 50 K) to an unknown deep acceptor having an energy level 1.130 eV above the valence band.« less

  17. xMDFF: molecular dynamics flexible fitting of low-resolution X-ray structures.

    PubMed

    McGreevy, Ryan; Singharoy, Abhishek; Li, Qufei; Zhang, Jingfen; Xu, Dong; Perozo, Eduardo; Schulten, Klaus

    2014-09-01

    X-ray crystallography remains the most dominant method for solving atomic structures. However, for relatively large systems, the availability of only medium-to-low-resolution diffraction data often limits the determination of all-atom details. A new molecular dynamics flexible fitting (MDFF)-based approach, xMDFF, for determining structures from such low-resolution crystallographic data is reported. xMDFF employs a real-space refinement scheme that flexibly fits atomic models into an iteratively updating electron-density map. It addresses significant large-scale deformations of the initial model to fit the low-resolution density, as tested with synthetic low-resolution maps of D-ribose-binding protein. xMDFF has been successfully applied to re-refine six low-resolution protein structures of varying sizes that had already been submitted to the Protein Data Bank. Finally, via systematic refinement of a series of data from 3.6 to 7 Å resolution, xMDFF refinements together with electrophysiology experiments were used to validate the first all-atom structure of the voltage-sensing protein Ci-VSP.

  18. Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures

    PubMed Central

    Warmuth, Franziska; Körner, Carolin

    2015-01-01

    The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented. PMID:28793713

  19. Density functional study for crystalline structures and electronic properties of Si1- x Sn x binary alloys

    NASA Astrophysics Data System (ADS)

    Nagae, Yuki; Kurosawa, Masashi; Shibayama, Shigehisa; Araidai, Masaaki; Sakashita, Mitsuo; Nakatsuka, Osamu; Shiraishi, Kenji; Zaima, Shigeaki

    2016-08-01

    We have carried out density functional theory (DFT) calculation for Si1- x Sn x alloy and investigated the effect of the displacement of Si and Sn atoms with strain relaxation on the lattice constant and E- k dispersion. We calculated the formation probabilities for all atomic configurations of Si1- x Sn x according to the Boltzmann distribution. The average lattice constant and E- k dispersion were weighted by the formation probability of each configuration of Si1- x Sn x . We estimated the displacement of Si and Sn atoms from the initial tetrahedral site in the Si1- x Sn x unit cell considering structural relaxation under hydrostatic pressure, and we found that the breaking of the degenerated electronic levels of the valence band edge could be caused by the breaking of the tetrahedral symmetry. We also calculated the E- k dispersion of the Si1- x Sn x alloy by the DFT+U method and found that a Sn content above 50% would be required for the indirect-direct transition.

  20. Four-Way Ka-Band Power Combiner

    NASA Technical Reports Server (NTRS)

    Perez, Raul; Li, Samuel

    2007-01-01

    A waveguide structure for combining the outputs of four amplifiers operating at 35 GHz (Ka band) is based on a similar prior structure used in the X band. The structure is designed to function with low combining loss and low total reflected power at a center frequency of 35 GHz with a 160 MHz bandwidth. The structure (see figure) comprises mainly a junction of five rectangular waveguides in a radial waveguide. The outputs of the four amplifiers can be coupled in through any four of the five waveguide ports. Provided that these four signals are properly phased, they combine and come out through the fifth waveguide port.

  1. Observations of Multi-band Structures in Double Star TC-1 PEACE Electron and HIA Ion Data

    NASA Astrophysics Data System (ADS)

    Mohan Narasimhan, K.; Fazakerley, A. N.; Grimald, S.; Dandouras, I. S.; Mihaljcic, B.; Kistler, L. M.; Owen, C. J.

    2015-12-01

    Several authors have reported inner magnetosphere observations of proton distributions confined to narrow energy bands in the range 1 - 25 keV (Smith and Hoffman (1974), etc). These structures have been described as "nose structures", with reference to their appearance in energy-time spectrograms and are also known as "bands" if they occur for extended periods of time. Multi-nose structures have been observed if 2 or more noses appear at the same time (Vallat et al., 2007). Gaps between "noses" (or "bands") have been explained in terms of the competing corotation, convection and magnetic gradient drifts. Charge exchange losses in slow drift paths for steady state scenarios and the role of substorm injections have also been considered (Li et al., 2000; Ebihara et al., 2004). We analyse observations of electron and ion multi-band structures frequently seen in Double-Star TC1 PEACE and HIA data. We present results from statistical surveys conducted using data from the duration of the mission. Furthermore, using a combination of both statistics and simulations, we test previous theories as to possible formation mechanisms and explore other possible explanations.

  2. Structural and optical manipulation of colloidal Ge1-xSnx nanocrystals with experimentally synthesized sizes: Atomistic tight-binding theory

    NASA Astrophysics Data System (ADS)

    Sukkabot, Worasak

    2017-02-01

    Nontoxic, maintainable and cost-effective group IV semiconductors are gorgeous for an expansive range of electronic and optoelectronic applications, even though the presence of the indirect band gap obstructs the optical performance. However, band structures can be modified from indirect to direct band gaps by constructing the nanostructures or by alloying with tin (Sn) material. In the study presented here, I investigate the impact of ion-centred types, Sn compositions and dimensions on the electronic structures and optical properties in Ge1-xSnx diamond cubic nanocrystals of the experimentally synthesized Sn contents and diameters using the atomistic tight-binding theory (TB) in the conjunction with the configuration interaction description (CI). The analysis of the mechanism suggests that the physical properties are mainly sensitive with ion-centred types (anion (a) and cation (c)), Sn compositions and dimensions of Ge1-xSnx diamond cubic nanocrystals. The reduction of optical band gaps is reported with the increasing diameters and Sn alloying contents. The visible spectral range is obtained allowing for the applications in bio imaging and chemical sensing. The optical band gaps based on tight-binding calculations are in close agreement with the experimental data for Ge1-xSnx nanocrystals with diameter of 2.1 nm, while for Ge1-xSnx nanocrystals with diameter of 2.7 nm there is a discrepancy of 0.4 eV with experimental results and first-principles calculations. An improvement in the luminescence properties of such Ge1-xSnx nanocrystals becomes possible in the presence of the Sn contents. The electron-hole coulomb interaction is reduced with the increasing Sn components, while the electron-hole exchange interaction is increased with the increasing Sn contents. In addition, I have to point out an astonishing phenomenon, stokes shift and fine structure splitting, with the aim for the realization of the entangled source. The stokes shift and fine structure splitting

  3. The flaky porous Fe3O4 with tunable dimensions for enhanced microwave absorption performance in X and C bands.

    PubMed

    Zhao, Huanqin; Cheng, Yan; Liu, Wei; Yang, Zhihong; Zhang, Baoshan; Ji, Guangbin; Du, Youwei

    2018-07-20

    Special electric and magnetic characteristics make Fe 3 O 4 widely applied in the electromagnetic (EM) wave absorption region. However, for pure Fe 3 O 4 , it is still a challenge to simultaneously obtain high absorption intensity and broadband absorption at a low thickness, owing to its low dielectric property. As we realized, flake configuration and the porous structure have obviously promote the EM wave absorption property. Because the former can lead to multi-reflection between flakes and the latter is conductive to interface polarization, flaky Fe 3 O 4 with a porous and coarse surface was designed to overcome the deficiency of traditional Fe 3 O 4 particles. The experimental results demonstrate that the flaky configuration is conductive to enhancing the dielectric coefficient and optimizing impedance matching. Moreover, the complex permittivity rises with the aspect ratio of the sheet. Under a suitable dimension, the flaky Fe 3 O 4 could acquire targeted EM wave absorption capacity in the X band (8-12 GHz). In detail, the maximum reflection loss (RL) could reach a strong intensity of -49 dB at 2.05 mm. The effective absorption bandwidth (EAB) with RL below -10 dB is 4.32 (7.52-11.84) GHz, which is almost equivalent to the whole X band (8-12 GHz). Even more exciting, when regulating the thickness between 2.05 and 3.05 mm, the EAB could cover the entire C and X bands (4-12 GHz). This study provides a good reference for the future development of other ferromagnetic materials toward specific microwave bands.

  4. Band-gap tuning and optical response of two-dimensional Si x C 1 - x : A first-principles real-space study of disordered two-dimensional materials

    DOE PAGES

    Sadhukhan, Banasree; Singh, Prashant; Nayak, Arabinda; ...

    2017-08-09

    We present a real-space formulation for calculating the electronic structure and optical conductivity of random alloys based on Kubo-Greenwood formalism interfaced with augmented space recursion technique formulated with the tight-binding linear muffin-tin orbital basis with the van Leeuwen–Baerends corrected exchange potential. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of two-dimensional honeycomb siliphene Si xC 1–x beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic structure and optical response over a wide energy range, and the results are discussedmore » in the light of the available experimental and other theoretical data. As a result, our proposed formalism may open up a facile way for planned band-gap engineering in optoelectronic applications.« less

  5. Band-gap tuning and optical response of two-dimensional Si x C 1 - x : A first-principles real-space study of disordered two-dimensional materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sadhukhan, Banasree; Singh, Prashant; Nayak, Arabinda

    We present a real-space formulation for calculating the electronic structure and optical conductivity of random alloys based on Kubo-Greenwood formalism interfaced with augmented space recursion technique formulated with the tight-binding linear muffin-tin orbital basis with the van Leeuwen–Baerends corrected exchange potential. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of two-dimensional honeycomb siliphene Si xC 1–x beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic structure and optical response over a wide energy range, and the results are discussedmore » in the light of the available experimental and other theoretical data. As a result, our proposed formalism may open up a facile way for planned band-gap engineering in optoelectronic applications.« less

  6. Fermiology of the strongly spin-orbit coupled superconductor Sn(1-x)In(x)Te: implications for topological superconductivity.

    PubMed

    Sato, T; Tanaka, Y; Nakayama, K; Souma, S; Takahashi, T; Sasaki, S; Ren, Z; Taskin, A A; Segawa, Kouji; Ando, Yoichi

    2013-05-17

    We have performed angle-resolved photoemission spectroscopy on the strongly spin-orbit coupled low-carrier density superconductor Sn(1-x)In(x)Te (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological superconductivity, as recently reported for this compound based on point-contact spectroscopy. The obtained energy-band structure reveals a small holelike Fermi surface centered at the L point of the bulk Brillouin zone, together with a signature of a topological surface state, indicating that this material is a doped topological crystalline insulator characterized by band inversion and mirror symmetry. A comparison of the electronic states with a band-noninverted superconductor possessing a similar Fermi surface structure, Pb(1-x)Tl(x)Te, suggests that the anomalous behavior in the superconducting state of Sn(1-x)In(x)Te is related to the peculiar orbital characteristics of the bulk valence band and/or the presence of a topological surface state.

  7. A phase width for CaGaSn. Crystal structure of mixed intermetallic Ca{sub 4}Ga{sub 4+x}Sn{sub 4−x} and SmGa{sub x}Sn{sub 3−x}, stability, geometry and electronic structure

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tillard, Monique, E-mail: mtillard@univ-montp2.fr

    X-ray single-crystal structure has been established for new compositions in intermetallic systems of tin and gallium. Crystals were successfully obtained in alloys prepared from elements. The structure of SmGaSn{sub 2} (cubic Pm3̄m, a=4.5778(8) Å, Z=1, R1=0.012) is described with atomic disorder at all Sn/Ga positions and the structure of Ca{sub 4}Ga{sub 4.9}Sn{sub 3.1} (hexagonal, P6{sub 3}/mmc, a=4.2233(9), c=17.601(7) Å, Z=1, R1=0.062) raises an interesting question about existence of a composition domain for CaGaSn. Finally, Ca{sub 4}Ga{sub 4.9}Sn{sub 3.1} should be considered as a particular composition of Ca{sub 4}Ga{sub 4+x}Sn{sub 4−x}, a compound assumed to exist in the range x ~more » 0−1. Partial atomic ordering characterizes the Sn/Ga puckered layers of hexagons whose geometries are analyzed and discussed comparatively with analogous arrangements in AlB{sub 2} related hexagonal compounds. The study is supported by rigid band model and DFT calculations performed for different experimental and hypothetic arrangements. - Graphical abstract: A phase width for Ca{sub 4}Ga{sub 4+x}Sn{sub 4−x} belonging to the hexagonal YPtAs structure-type. - Highlights: • Single crystals of mixed tin gallium ternary intermetallics were obtained. • Partial ordering at metal sites and phase width are evidenced for Ca{sub 4}Ga{sub 4+x}Sn{sub 4−x}. • Layer deviation to flatness is studied comparatively with related structures. • Geometry and stability analyses based on DFT calculations are provided.« less

  8. Special quasiordered structures: Role of short-range order in the semiconductor alloy (GaN) 1 -x(ZnO) x

    NASA Astrophysics Data System (ADS)

    Liu, Jian; Fernández-Serra, Maria V.; Allen, Philip B.

    2016-02-01

    This paper studies short-range order (SRO) in the semiconductor alloy (GaN) 1 -x(ZnO) x. Monte Carlo simulations performed on a density functional theory (DFT)-based cluster expansion model show that the heterovalent alloys exhibit strong SRO because of the energetic preference for the valence-matched nearest-neighbor Ga-N and Zn-O pairs. To represent the SRO-related structural correlations, we introduce the concept of special quasiordered structure (SQoS). Subsequent DFT calculations reveal the dramatic influence of SRO on the atomic, electronic, and vibrational properties of the (GaN) 1 -x(ZnO) x alloy. Due to the enhanced statistical presence of the energetically unfavored Zn-N bonds with the strong Zn 3 d -N 2 p repulsion, the disordered alloys exhibit much larger lattice bowing and band-gap reduction than those of the short-range ordered alloys. Lattice vibrational entropy tilts the alloy toward less SRO.

  9. Probing the Electronic Structure of - and Electron-Doped High-Temperature Superconductors with Photoemission and X-Ray Absorption Spectroscopies

    NASA Astrophysics Data System (ADS)

    Lederman, Eli R.

    1990-01-01

    The electronic structures of hole- and electron -doped high temperature superconductors have been probed using x-ray absorption near-edge spectroscopy (XANES) and photoelectron emission spectroscopy (PES). These measurements have been performed on RBa_2Cu _3O_{rm 7-y} , La_{rm 2-x}Sr _{rm x}CuO _4 and Ln_{rm 2 -x}Ce_{rm x} CuO_{rm 4} for R = Y, Eu and Ln = Nd, Pr and Sm. The parameters x and y have been varied to include a range of hole and electron carrier densities and the undoped parent compounds. Previous XANES and PES results have indicated that unoccupied states of O 2p character can be associated with the carriers in the materials RBa_2 Cu_3O_{ rm 7-y} and La_{ rm 2-x}Sr_{rm x}CuO_4 and that the density of holes increases with O and Sr content, respectively. Conduction was hole-based in all known high-T_{ rm c} cuprates until the recent discovery of superconductivity in Ln_{rm 2-x}Ce_{rm x} CuO_4. Hall coefficient measurements have suggested that the carriers in this system are electrons added with Ce doping. It has been anticipated that these electron-doped materials will provide an important test for models of high temperature superconductivity. PES measurements are presented that show significant Cu 3d character in the valence band of these electron-based materials, but that the Cu^{2+} /Cu^{1+} ratio is unchanged by the level of Ce doping, indicating that doped electrons are itinerant rather than highly correlated. Resonant photoemission from the valence band indicates the presence of unoccupied O 2p states, but these holes are less abundant than in the hole-doped materials. Measurements of XANES at the O 1s edge suggest that unoccupied states of O 2p character in the electron -doped materials are not related to conduction in a simple way. The density of these holes is shown to decrease upon Ce doping and the process of reduction, despite the fact that both are necessary of superconductivity. Furthermore, whereas the O 2p holes are at E_{rm F} in the

  10. Effect of thermal stresses on frequency band structures of elastic metamaterial plates

    NASA Astrophysics Data System (ADS)

    Wu, Ying; Yu, Kaiping; Yang, Linyun; Zhao, Rui; Shi, Xiaotian; Tian, Kuo

    2018-01-01

    We investigate the effect of thermal stresses on the band structure of elastic metamaterial plates by developing a useful finite-element based method. The thermal field is assumed to be uniform throughout the whole plate. Specifically, we find that the stiffness matrix of plate element is comprised of elastic and thermal stresses parts, which can be regarded as a linear function of temperature difference. We additionally demonstrate that the relative magnitudes between elastic properties and thermal stresses will lead to nonlinear effects on frequency band structures based on two different types of metamaterial plates made of single and double inclusions of square plates, respectively. Then, we validate the proposed approach by comparing the band structures with the frequency response curves obtained in finite periodic structures. We conduct sensitivity analysis and discuss in-depth the sensitivities of band structures with respect to temperature difference to quantitatively investigate the effect of thermal stresses on each band. In addition, the coupled effects of thermal stresses and temperature-dependent material properties on the band structure of Aluminum/silicone rubber plate have also been discussed. The proposed method and new findings in this paper extends the ability of existing metamaterial plates by enabling tunability over a wide range of frequencies in thermal environments.

  11. Polarimetric and Structural Properties of a Boreal Forest at P-Band and L-Band

    NASA Astrophysics Data System (ADS)

    Tebaldini, S.; Rocca, F.

    2010-12-01

    With this paper we investigate the structural and polarimetric of the boreal forest within the Krycklan river catchment, Northern Sweden, basing on multi-polarimetric and multi-baseline SAR surveys at P-Band and L-Band collected in the framework of the ESA campaign BioSAR 2008. The analysis has been carried out by applying the Algebraic Synthesis (AS) technique, recently introduced in literature, which provides a theoretical framework for the decomposition of the backscattered signal into ground-only and volume-only contributions, basing on both baseline and polarization diversity. The availability of multiple baselines allows the formation of a synthetic aperture not only along the azimuth direction but also in elevation. Accordingly, the backscattered echoes can be focused not only in the slant range, azimuth plane, but in the whole 3D space. This is the rationale of the SAR Tomography (T-SAR) concept, which has been widely considered in the literature of the last years. It follows that, as long as the penetration in the scattering volume is guaranteed, the vertical profile of the vegetation layer is retrieved by separating backscatter contributions along the vertical direction, which is the main reason for the exploitation of Tomographic techniques at longer wavelengths. Still, the capabilities of T-SAR are limited to imaging the global vertical structure of the electromagnetic scattering in a certain polarization. It then becomes important to develop methodologies for the investigation of the vertical structure of different Scattering Mechanisms (SMs), such as ground and volume scattering, in such a way as to derive information that can be delivered also outside the field of Radar processing. This is an issue that may become relevant at longer wavelengths, such as P-Band, where the presence of multiple scattering arising from the interaction with terrain could hinder the correct reconstruction of the forest structure. The availability of multiple polarizations

  12. Status of the NOAO evaluation of the Hughes 20x64 Si:As impurity band conduction array. [for ground and space-based astronomy

    NASA Technical Reports Server (NTRS)

    Fowler, A. M.; Joyce, R. R.

    1990-01-01

    The Hughes 20 x 64 Si:As impurity band conduction arrays designed for ground-based and spaceborne astronomy observations is described together with experiments performed at NOAO to test these arrays. Special attention is given to the design and the characteristics of the test system and to the test methods. The initial tests on two columns of one array indicate that the array is easy to operate and performed satisfactorily.

  13. Triaxial-band structures, chirality, and magnetic rotation in La 133

    DOE PAGES

    Petrache, C. M.; Chen, Q. B.; Guo, S.; ...

    2016-12-05

    The structure of 133La has been investigated using the 116Cd( 22Ne,4pn) reaction and the Gammasphere array. Three new bands of quadrupole transitions and one band of dipole transitions are identified and the previously reported level scheme is revised and extended to higher spins. The observed structures are discussed using the cranked Nilsson-Strutinsky formalism, covariant density functional theory, and the particle-rotor model. Triaxial configurations are assigned to all observed bands. For the high-spin bands it is found that rotations around different axes can occur, depending on the configuration. The orientation of the angular momenta of the core and of themore » active particles is investigated, suggesting chiral rotation for two nearly degenerate dipole bands and magnetic rotation for one dipole band. As a result, it is shown that the h 11/2 neutron holes present in the configuration of the nearly degenerate dipole bands have significant angular momentum components not only along the long axis but also along the short axis, contributing to the balance of the angular momentum components along the short and long axes and thus giving rise to a chiral geometry.« less

  14. Band Gap Tuning of CH₃NH₃Pb(Br(1-x)Clx)₃ Hybrid Perovskite for Blue Electroluminescence.

    PubMed

    Kumawat, Naresh K; Dey, Amrita; Kumar, Aravindh; Gopinathan, Sreelekha P; Narasimhan, K L; Kabra, Dinesh

    2015-06-24

    We report on the structural, morphological and optical properties of AB(Br(1-x)Cl(x))3 (where, A = CH3NH3(+), B = Pb(2+) and x = 0 to 1) perovskite semiconductor and their successful demonstration in green and blue emissive perovskite light emitting diodes at room temperature. The bandgap of perovskite thin film is tuned from 2.42 to 3.16 eV. The onset of optical absorption is dominated by excitonic effects. The coulomb field of the exciton influences the absorption at the band edge. Hence, it is necessary to explicitly account for the enhancement of the absorption through the Sommerfield factor. This enables us to correctly extract the exciton binding energy and the electronic bandgap. We also show that the lattice constant varies linearly with the fractional chlorine content satisfying Vegards law.

  15. Mini-RF S- and X-Band Bistatic Radar Observations of the Moon

    NASA Astrophysics Data System (ADS)

    Patterson, G. W.; Carter, L. M.; Stickle, A. M.; Cahill, J. T. S.; Nolan, M. C.; Morgan, G. A.; Schroeder, D. M.; Mini-RF Team

    2018-04-01

    The Mini-RF instrument onboard the NASA LRO mission is collecting S- and X-band bistatic radar data to provide new insights regarding regolith development on the Moon, the diversity of lunar volcanism, and the current inventory of polar ice.

  16. Absolute band structure determination on naturally occurring rutile with complex chemistry: Implications for mineral photocatalysis on both Earth and Mars

    NASA Astrophysics Data System (ADS)

    Li, Yan; Xu, Xiaoming; Li, Yanzhang; Ding, Cong; Wu, Jing; Lu, Anhuai; Ding, Hongrui; Qin, Shan; Wang, Changqiu

    2018-05-01

    Rutile is the most common and stable form of TiO2 that ubiquitously existing on Earth and other terrestrial planets like Mars. Semiconducting mineral such as rutile-based photoredox reactions have been considered to play important roles in geological times. However, due to the inherent complexity in chemistry, the precision determination on band structure of natural rutile and the theoretical explanation on its solar-driven photochemistry have been hardly seen yet. Considering the multiple minor and trace elements in natural rutile, we firstly obtained the single-crystal crystallography, mineralogical composition and defects characteristic of the rutile sample by using both powder and single crystal X-ray diffraction, electron microprobe analysis and X-ray photoelectron spectroscopy. Then, the band gap was accurately determined by synchrotron-based O K-edge X-ray absorption and emission spectra, which was firstly applied to natural rutile due to its robustness on compositions and defects. The absolute band edges of the rutile sample was calculated by considering the electronegativity of the atoms, band gap and point of zero charge. Besides, after detecting the defect energy levels by photoluminescence spectra, we drew the schematic band structure of natural rutile. The band gap (2.7 eV) of natural rutile was narrower than that of synthetic rutile (3.0 eV), and the conduction and valence band edges of natural rutile at pH = pHPZC were determined to be -0.04 V and 2.66 V (vs. NHE), respectively. The defect energy levels located at nearly the middle position of the forbidden band. Further, we used theoretical calculations to verify the isomorphous substitution of Fe and V for Ti gave rise to the distortion of TiO6 octahedron and created vacancy defects in natural rutile. Based on density functional theory, the narrowed band gap was interpreted to the contribution of Fe-3d and V-3d orbits, and the defect energy state was formed by hybridization of O-2p and Fe/V/Ti-3d

  17. D Haas-Van Alphen Oscillations in the Diluted Magnetic Semiconductor MERCURY(1-X)IRON(X)SELENIUM.

    NASA Astrophysics Data System (ADS)

    Miller, Michael Montgomery

    de Haas-van Alphen measurements are performed in oriented single crystals of Hg_{ rm 1-x}Fe_{rm x}Se in the range 0.0 <=q x <=q 0.05 for 0.5 < T < 4.2K for the magnetic field range 0.2 T < H < 1.0 T. These data can be interpreted in terms of a closed orbit magnetic breakdown model. The effect of Fe on the conduction band is explored in some detail. It is found that the presence of Fe lowers the Dingle temperature in a non-monotonic fashion, i.e., there is a minimum in the Dingle temperature for x ~ 0.001. This effect cannot be attributed to a gross modification of the band structure. Effective mass measurements are in good agreement with those expected for HgSe. However, the presence of Fe is seen to have a subtle effect on the band structure. The overall symmetry of the band structure may be modified by the addition of Fe. Furthermore, the presence of Fe tends to decrease the inversion asymmetry splitting of the conduction band as evidenced in the low-field beating.

  18. An X-band phase-locked relativistic backward wave oscillator

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Y.; Science and Technology on High Power Microwave Laboratory, Mianyang 621900; Li, Z. H.

    2015-08-15

    For the purpose of coherent high power microwave combining at high frequency band, an X-band phase-locked relativistic backward wave oscillator is presented and investigated. The phase-locking of the oscillator is accomplished by modulation of the electron beam before it reaches the oscillator. To produce a bunched beam with an acceptable injected RF power requirement, an overmoded input cavity is employed to provide initial density modulation. And a buncher cavity is introduced to further increase the modulation depth. When the beam enters the oscillator, the modulation depth is enough to lock the frequency and phase of the output microwave generated bymore » the oscillator. Particle-in-cell simulation shows that an input power of 90 kW is sufficient to lock the frequency and phase of 1.5 GW output microwave with locking bandwidth of 60 MHz.« less

  19. Band Structure Engineering and Thermoelectric Properties of Charge-Compensated Filled Skutterudites

    PubMed Central

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun; Salvador, James R.; Zhang, Cheng; Villaire, William L.; Haddad, Daad; Yang, Jihui; Zhu, Yimei; Li, Qiang

    2015-01-01

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co4Sb12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing the Yb content, we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively. PMID:26456013

  20. Band structure engineering and thermoelectric properties of charge-compensated filled skutterudites

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun

    2015-10-12

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co 4Sb 12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing themore » Yb content, we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively.« less

  1. Band Structure Engineering and Thermoelectric Properties of Charge-Compensated Filled Skutterudites

    NASA Astrophysics Data System (ADS)

    Shi, Xiaoya; Yang, Jiong; Wu, Lijun; Salvador, James R.; Zhang, Cheng; Villaire, William L.; Haddad, Daad; Yang, Jihui; Zhu, Yimei; Li, Qiang

    2015-10-01

    Thermoelectric properties of semiconductors are intimately related to their electronic band structure, which can be engineered via chemical doping. Dopant Ga in the cage-structured skutterudite Co4Sb12 substitutes Sb sites while occupying the void sites. Combining quantitative scanning transmission electron microscopy and first-principles calculations, we show that Ga dual-site occupancy breaks the symmetry of the Sb-Sb network, splits the deep triply-degenerate conduction bands, and drives them downward to the band edge. The charge-compensating nature of the dual occupancy Ga increases overall filling fraction limit. By imparting this unique band structure feature, and judiciously doping the materials by increasing the Yb content, we promote the Fermi level to a point where carriers are in energetic proximity to these features. Increased participation of these heavier bands in electronic transport leads to increased thermopower and effective mass. Further, the localized distortion from Ga/Sb substitution enhances the phonon scattering to reduce the thermal conductivity effectively.

  2. Band structure of an electron in a kind of periodic potentials with singularities

    NASA Astrophysics Data System (ADS)

    Hai, Kuo; Yu, Ning; Jia, Jiangping

    2018-06-01

    Noninteracting electrons in some crystals may experience periodic potentials with singularities and the governing Schrödinger equation cannot be defined at the singular points. The band structure of a single electron in such a one-dimensional crystal has been calculated by using an equivalent integral form of the Schrödinger equation. Both the perturbed and exact solutions are constructed respectively for the cases of a general singular weak-periodic system and its an exactly solvable version, Kronig-Penney model. Any one of them leads to a special band structure of the energy-dependent parameter, which results in an effective correction to the previous energy-band structure and gives a new explanation for forming the band structure. The used method and obtained results could be a valuable aid in the study of energy bands in solid-state physics, and the new explanation may trigger investigation to different physical mechanism of electron band structures.

  3. Compact electromagnetic bandgap structures for notch band in ultra-wideband applications.

    PubMed

    Rotaru, Mihai; Sykulski, Jan

    2010-01-01

    This paper introduces a novel approach to create notch band filters in the front-end of ultra-wideband (UWB) communication systems based on electromagnetic bandgap (EBG) structures. The concept presented here can be implemented in any structure that has a microstrip in its configuration. The EBG structure is first analyzed using a full wave electromagnetic solver and then optimized to work at WLAN band (5.15-5.825 GHz). Two UWB passband filters are used to demonstrate the applicability and effectiveness of the novel EBG notch band feature. Simulation results are provided for two cases studied.

  4. Compact Electromagnetic Bandgap Structures for Notch Band in Ultra-Wideband Applications

    PubMed Central

    Rotaru, Mihai; Sykulski, Jan

    2010-01-01

    This paper introduces a novel approach to create notch band filters in the front-end of ultra-wideband (UWB) communication systems based on electromagnetic bandgap (EBG) structures. The concept presented here can be implemented in any structure that has a microstrip in its configuration. The EBG structure is first analyzed using a full wave electromagnetic solver and then optimized to work at WLAN band (5.15–5.825 GHz). Two UWB passband filters are used to demonstrate the applicability and effectiveness of the novel EBG notch band feature. Simulation results are provided for two cases studied. PMID:22163430

  5. DSN 63 64-meter antenna S- and X-band efficiency and system noise temperature calibrations, July 1986

    NASA Technical Reports Server (NTRS)

    Slobin, S. D.

    1987-01-01

    The Deep Space Network (DSN) 64-meter antenna in Spain (DSN 63) has been calibrated prior to its upgrading to a 70-meter high efficiency configuration in preparation for the Voyager Neptune encounter in August 1989. The S-band (2285 MHz) and X-band (8420 MHz) effective area efficiency and system noise temperature calibrations were carried out during July 1986 to establish a baseline system performance for this station. It is expected that the 70-meter will result in at least a 1.9 dB G/T improvement at X-band relative to the 64-meter baseline reference.

  6. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    NASA Astrophysics Data System (ADS)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  7. Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Agawane, G.L., E-mail: agawaneganesh@gmail.com; Shin, Seung Wook; Vanalakar, S.A.

    2014-07-01

    Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(Smore » + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.« less

  8. Towards coherent combining of X-band high power microwaves: phase-locked long pulse radiations by a relativistic triaxial klystron amplifier

    PubMed Central

    Ju, Jinchuan; Zhang, Jun; Qi, Zumin; Yang, Jianhua; Shu, Ting; Zhang, Jiande; Zhong, Huihuang

    2016-01-01

    The radio-frequency breakdown due to ultrahigh electric field strength essentially limits power handling capability of an individual high power microwave (HPM) generator, and this issue becomes more challenging for high frequency bands. Coherent power combining therefore provides an alternative approach to achieve an equivalent peak power of the order of ∼100 GW, which consequently provides opportunities to explore microwave related physics at extremes. The triaxial klystron amplifier (TKA) is a promising candidate for coherent power combing in high frequency bands owing to its intrinsic merit of high power capacity, nevertheless phase-locked long pulse radiation from TKA has not yet been obtained experimentally as the coaxial structure of TKA can easily lead to self-excitation of parasitic modes. In this paper, we present investigations into an X-band TKA capable of producing 1.1 GW HPMs with pulse duration of about 103 ns at the frequency of 9.375 GHz in experiment. Furthermore, the shot-to-shot fluctuation standard deviation of the phase shifts between the input and output microwaves is demonstrated to be less than 10°. The reported achievements open up prospects for accomplishing coherent power combining of X-band HPMs in the near future, and might also excite new development interests concerning high frequency TKAs. PMID:27481661

  9. Systematic research on Ag2X (X = O, S, Se, Te) as visible and near-infrared light driven photocatalysts and effects of their electronic structures

    NASA Astrophysics Data System (ADS)

    Jiang, Wei; Wu, Zhaomei; Zhu, Yingming; Tian, Wen; Liang, Bin

    2018-01-01

    Four silver chalcogen compounds, Ag2O, Ag2S, Ag2Se and Ag2Te, can be utilized as visible-light-driven photocatalysts. In this research, the electronic structures of these compounds were analyzed by simulation and experiments to systematically reveal the relationship between photocatalytic performance and energetic structure. All four chalcogenides exhibited interesting photocatalytic activities under ultraviolet, visible and near-infrared light. However, their photocatalytic performances and stability significantly depended on the band gap width, and the valence band and conduct band position, which was determined by their composition. Increasing the X atomic number from O to Te resulted in the upward movement of the valence band top and the conduct band bottom, which resulted in narrower band gaps, a wider absorption spectrum, a weaker photo-oxidization capacity, a higher recombination probability of hole and electron pairs, lower quantum efficiency, and worse stability. Among them, Ag2O has the highest photocatalytic performance and stability due to its widest band gap and lowest position of VB and CB. The combined action of photogenerated holes and different radicals, depending on the different electronic structures, including anion ozone radical, hydroxide radical, and superoxide radical, was observed and understood. The results of experimental observations and simulations of the four silver chalcogen compounds suggested that a proper electronic structure is necessary to obtain a balance between photocatalytic performance and absorbable light region in the development of new photocatalysts.

  10. Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Li, Guo-Ling; Zhang, Fabi; Cui, Yi-Tao; Oji, Hiroshi; Son, Jin-Young; Guo, Qixin

    2015-07-01

    By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga2O3 were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga2O3.

  11. Electronic structure of Mo1-x Re x alloys studied through resonant photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Sundar, Shyam; Banik, Soma; Sharath Chandra, L. S.; Chattopadhyay, M. K.; Ganguli, Tapas; Lodha, G. S.; Pandey, Sudhir K.; Phase, D. M.; Roy, S. B.

    2016-08-01

    We studied the electronic structure of Mo-rich Mo1-x Re x alloys (0≤slant x≤slant 0.4 ) using valence band photoemission spectroscopy in the photon energy range 23-70 eV and density of states calculations. Comparison of the photoemission spectra with the density of states calculations suggests that, with respect to the Fermi level E F, the d states lie mostly in the binding energy range 0 to  -6 eV, whereas s states lie in the binding energy range  -4 to  -10 eV. We observed two resonances in the photoemission spectra of each sample, one at about 35 eV photon energy and the other at about 45 eV photon energy. Our analysis suggests that the resonance at 35 eV photon energy is related to the Mo 4p-5s transition and the resonance at 45 eV photon energy is related to the contribution from both the Mo 4p-4d transition (threshold: 42 eV) and the Re 5p-5d transition (threshold: 46 eV). In the constant initial state plot, the resonance at 35 eV incident photon energy for binding energy features in the range E F (BE  =  0) to  -5 eV becomes progressively less prominent with increasing Re concentration x and vanishes for x  >  0.2. The difference plots obtained by subtracting the valence band photoemission spectrum of Mo from that of Mo1-x Re x alloys, measured at 47 eV photon energy, reveal that the Re d-like states appear near E F when Re is alloyed with Mo. These results indicate that interband s-d interaction, which is weak in Mo, increases with increasing x and influences the nature of the superconductivity in alloys with higher x.

  12. Nature of the abnormal band gap narrowing in highly crystalline Zn1-xCoxO nanorods

    NASA Astrophysics Data System (ADS)

    Qiu, Xiaoqing; Li, Liping; Li, Guangshe

    2006-03-01

    Highly crystalline Zn1-xCoxO nanorods were prepared using a hydrothermal method. With increasing Co2+ dopant concentration, the lattice volume enlarged considerably, which is associated with the enhanced repulsive interactions of defect dipole moments on the wall surfaces. This lattice modification produced a significant decrease in band gap energies with its magnitude that followed the relationship, ΔEg=ΔE0•(e-x/B-1), where x and B are Co2+ dopant concentration and a constant, respectively. The abnormal band gap energies were indicated to originate from the sp-d exchange interactions that are proportional to the square of lattice volume.

  13. The continuous and discrete molecular orbital x-ray bands from Xe(q+) (12≤q≤29) +Zn collisions.

    PubMed

    Guo, Yipan; Yang, Zhihu; Hu, Bitao; Wang, Xiangli; Song, Zhangyong; Xu, Qiumei; Zhang, Boli; Chen, Jing; Yang, Bian; Yang, Jie

    2016-07-29

    In this paper, the x-ray emissions are measured by the interaction of 1500-3500 keV Xe(q+) (q = 12, 15, 17, 19, 21, 23, 26 and 29) ions with Zn target. When q < 29, we observe Ll, Lα, Lβ1, Lβ2 and Lγ characteristic x-rays from Xe(q+) ions and a broad M-shell molecular orbital (MO) x-ray band from the transient quasi-molecular levels. It is found that their yields quickly increase with different rates as the incident energy increases. Besides, the widths of the broad MO x-ray bands are about 0.9-1.32 keV over the energy range studied and are proportional to v(1/2) (v = projectile velocity). Most remarkably, when the projectile charge state is 29, the broad x-ray band separates into several narrow discrete spectra, which was never observed before in this field.

  14. Highly strained InxGa(1-x)As-InyAl(1-y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

    NASA Astrophysics Data System (ADS)

    Missous, M.; Mitchell, C.; Sly, J.; Lai, K. T.; Gupta, R.; Haywood, S. K.

    2004-01-01

    Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on InxGa(1-x)As-InyAl(1-y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of ∼420°C to produce structures that are suitable for both emission and detection in the 2- 5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In 0.84Ga 0.16As/AlAs/In 0.52Al 0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ- Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2- 7 μm) in three structures of differing In 0.84Ga 0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs-InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ- Γ bands and the Γ-X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.

  15. Nonrigid band shift and nonmonotonic electronic structure changes upon doping in the normal state of the pnictide high-temperature superconductor Ba ( F e 1 - x C o x ) 2 A s 2

    DOE PAGES

    Vilmercati, Paolo; Mo, Sung -Kwan; Fedorov, Alexei; ...

    2016-11-28

    Here, we report systematic angle-resolved photoemission (ARPES) experiments using different photon polarizations and experimental geometries and find that the doping evolution of the normal state of Ba(Fe 1–xCo x) 2As 2 deviates significantly from the predictions of a rigid band model. The data reveal a nonmonotonic dependence upon doping of key quantities such as band filling, bandwidth of the electron pocket, and quasiparticle coherence. Our analysis suggests that the observed phenomenology and the inapplicability of the rigid band model in Co-doped Ba122 are due to electronic correlations, and not to the either the strength of the impurity potential, or self-energymore » effects due to impurity scattering. Our findings indicate that the effects of doping in pnictides are much more complicated than currently believed. More generally, they indicate that a deep understanding of the evolution of the electronic properties of the normal state, which requires an understanding of the doping process, remains elusive even for the 122 iron-pnictides, which are viewed as the least correlated of the high-T C unconventional superconductors.« less

  16. Structural analysis and evaluation of actual PC bridge using 950 keV/3.95 MeV X-band linacs

    NASA Astrophysics Data System (ADS)

    Takeuchi, H.; Yano, R.; Ozawa, I.; Mitsuya, Y.; Dobashi, K.; Uesaka, M.; Kusano, J.; Oshima, Y.; Ishida, M.

    2017-07-01

    In Japan, bridges constructed during the strong economic growth era are facing an aging problem and advanced maintenance methods have become strongly required recently. To meet this demand, we develop the on-site inspection system using 950 keV/3.95 MeV X-band (9.3 GHz) linac X-ray sources. These systems can visualize in seconds the inner states of bridges, including cracks of concrete, location and state of tendons (wires) and other imperfections. At the on-site inspections, 950 keV linac exhibited sufficient performance. But, for thicker concrete, it is difficult to visualize the internal state by 950 keV linac. Therefore, we proceeded the installation of 3.95 MeV linac for on-site bridge inspection. In addition, for accurate evaluation, verification on the parallel motion CT technique and FEM analysis are in progress.

  17. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua; Rogl, P.; Romaka, V. V.

    The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, N{sub A}{sup Y} ≈ 1.9 × 10{sup 20}–5.7 × 10{sup 21} cm{sup –3} (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atomsmore » from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf{sub 1–x}Y{sub x}NiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.« less

  18. Epitaxial growth of MgO/Ga2O3 heterostructure and its band alignment studied by X-ray photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Matsuo, Norihiro; Doko, Naoki; Yasukawa, Yukiko; Saito, Hidekazu; Yuasa, Shinji

    2018-07-01

    We have grown an epitaxial MgO/Ga2O3 heterostructure on a MgO(001) substrate by molecular beam epitaxy. Crystallographic studies revealed the out-of-plane and in-plane crystal orientations between the MgO overlayer and the Ga2O3 layer, which were MgO(001) ∥ β-Ga2O3(001) and MgO[100] ∥ β-Ga2O3 [02\\bar{1}], respectively. The valence band offset at the MgO/β-Ga2O3 interface was determined to be 0.19 eV (type-II band alignment) by X-ray photoelectron spectroscopy, resulting in a large conduction band offset of 2.7–3.2 eV. These results indicate that MgO is a promising potential barrier for electrons in an epitaxial MgO/Ga2O3 multilayered structure.

  19. The flaky porous Fe3O4 with tunable dimensions for enhanced microwave absorption performance in X and C bands

    NASA Astrophysics Data System (ADS)

    Zhao, Huanqin; Cheng, Yan; Liu, Wei; Yang, Zhihong; Zhang, Baoshan; Ji, Guangbin; Du, Youwei

    2018-07-01

    Special electric and magnetic characteristics make Fe3O4 widely applied in the electromagnetic (EM) wave absorption region. However, for pure Fe3O4, it is still a challenge to simultaneously obtain high absorption intensity and broadband absorption at a low thickness, owing to its low dielectric property. As we realized, flake configuration and the porous structure have obviously promote the EM wave absorption property. Because the former can lead to multi-reflection between flakes and the latter is conductive to interface polarization, flaky Fe3O4 with a porous and coarse surface was designed to overcome the deficiency of traditional Fe3O4 particles. The experimental results demonstrate that the flaky configuration is conductive to enhancing the dielectric coefficient and optimizing impedance matching. Moreover, the complex permittivity rises with the aspect ratio of the sheet. Under a suitable dimension, the flaky Fe3O4 could acquire targeted EM wave absorption capacity in the X band (8–12 GHz). In detail, the maximum reflection loss (RL) could reach a strong intensity of ‑49 dB at 2.05 mm. The effective absorption bandwidth (EAB) with RL below ‑10 dB is 4.32 (7.52–11.84) GHz, which is almost equivalent to the whole X band (8–12 GHz). Even more exciting, when regulating the thickness between 2.05 and 3.05 mm, the EAB could cover the entire C and X bands (4–12 GHz). This study provides a good reference for the future development of other ferromagnetic materials toward specific microwave bands.

  20. Theoretical investigation of structural, electronic and optical properties of MgxBa1-xS, MgxBa1-xSe and MgxBa1-xTe ternary alloys using DFT based FP-LAPW approach

    NASA Astrophysics Data System (ADS)

    Bhattacharjee, Rahul; Chattopadhyaya, Surya

    2017-11-01

    Density functional theory (DFT) based full-potential linearized augmented plane wave (FP-LAPW) methodology has been employed to investigate theoretically the structural, electronic and optical properties of MgxBa1-xS, MgxBa1-xSe and MgxBa1-xTe ternary alloys for 0 ≤ x ≤ 1 in their rock-salt (B1) crystallographic phase. The exchange-correlation potentials for the structural properties have been computed using the Wu-Cohen generalized-gradient approximation (WC-GGA) scheme, while those for the electronic and optical properties have been computed using both the WC-GGA and the recently developed Tran-Blaha modified Becke-Johnson (TB-mBJ) schemes. The thermodynamic stability of all the ternary alloys have been investigated by calculating their respective enthalpy of formation. The atomic and orbital origin of different electronic states in the band structure of the compounds have been identified from the respective density of states (DOS). Using the approach of Zunger and co-workers, the microscopic origin of band gap bowing has been discussed in term of volume deformation, charge exchange and structural relaxation. Bonding characteristics among the constituent atoms of each of the specimens have been discussed from their charge density contour plots. Optical properties of the binary compounds and ternary alloys have been investigated theoretically in terms of their respective dielectric function, refractive index, normal incidence reflectivity and optical conductivity. Several calculated results have been compared with available experimental and other theoretical data.

  1. X-Band, 17-Watt Solid-State Power Amplifier

    NASA Technical Reports Server (NTRS)

    Mittskus, Anthony; Stone, Ernest; Boger, William; Burgess, David; Honda, Richard; Nuckolls, Carl

    2005-01-01

    An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

  2. Fluorinated graphene oxide for enhanced S and X-band microwave absorption

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sudeep, P. M.; TIFR-Centre for Interdisciplinary Sciences, Tata Institute of Fundamental Research, Hyderabad 500075; Vinayasree, S.

    2015-06-01

    Here we report the microwave absorbing properties of three graphene derivatives, namely, graphene oxide (GO), fluorinated GO (FGO, containing 5.6 at. % Fluorine (F)), and highly FGO (HFGO, containing 23 at. % F). FGO is known to be exhibiting improved electrochemical and electronic properties when compared to GO. Fluorination modifies the dielectric properties of GO and hence thought of as a good microwave absorber. The dielectric permittivities of GO, FGO, and HFGO were estimated in the S (2 GHz to 4 GHz) and X (8 GHz to 12 GHz) bands by employing cavity perturbation technique. For this, suspensions containing GO/FGO/HFGO were made in N-Methylmore » Pyrrolidone (NMP) and were subjected to cavity perturbation. The reflection loss was then estimated and it was found that −37 dB (at 3.2 GHz with 6.5 mm thickness) and −31 dB (at 2.8 GHz with 6 mm thickness) in the S band and a reflection loss of −18 dB (at 8.4 GHz with 2.5 mm thickness) and −10 dB (at 11 GHz with 2 mm thickness) in the X band were achieved for 0.01 wt. % of FGO and HFGO in NMP, respectively, suggesting that these materials can serve as efficient microwave absorbers even at low concentrations.« less

  3. Shuttle orbiter Ku-band radar/communications system design evaluation. Deliverable test equipment evaluation

    NASA Technical Reports Server (NTRS)

    Maronde, R. G.

    1980-01-01

    The Ku-band test equipment, known as the Deliverable System Test equipment (DSTE), is reviewed and evaluated. The DSTE is semiautomated and computer programs were generated for 14 communication mode tests and 17 radar mode tests. The 31 test modules provide a good cross section of tests with which to exercise the Ku-band system; however, it is very limited when being used to verify Ku-band system performance. More detailed test descriptions are needed, and a major area of concern is the DSTE sell-off procedure which is inadequate.

  4. The broad-band X-ray spectral variability of Mrk 841

    NASA Technical Reports Server (NTRS)

    George, I. M.; Nandra, K.; Fabian, A. C.; Turner, T. J.; Done, C.; Day, C. S. R.

    1993-01-01

    A detailed spectral analysis of five X-ray observations of Mrk 841 with the EXOSAT, Ginga, and ROSAT satellites is reported. Variability is apparent in both the soft (0.1-1.0 keV) and medium (1-20 keV) energy bands. Above, 1 keV, the spectra are adequately modeled by a power law with a strong emission line of equivalent width 450 eV. The large equivalent width of the emission line indicates a strongly enhanced reflection component of the source compared with other Seyferts observed with Ginga. The implications of the results of the analysis for physical models of the emission regions in this and other X-ray bright Seyferts are briefly examined.

  5. Changing optical band structure with single photons

    NASA Astrophysics Data System (ADS)

    Albrecht, Andreas; Caneva, Tommaso; Chang, Darrick E.

    2017-11-01

    Achieving strong interactions between individual photons enables a wide variety of exciting possibilities in quantum information science and many-body physics. Cold atoms interfaced with nanophotonic structures have emerged as a platform to realize novel forms of nonlinear interactions. In particular, when atoms are coupled to a photonic crystal waveguide, long-range atomic interactions can arise that are mediated by localized atom-photon bound states. We theoretically show that in such a system, the absorption of a single photon can change the band structure for a subsequent photon. This occurs because the first photon affects the atoms in the chain in an alternating fashion, thus leading to an effective period doubling of the system and a new optical band structure for the composite atom-nanophotonic system. We demonstrate how this mechanism can be engineered to realize a single-photon switch, where the first incoming photon switches the system from being highly transmissive to highly reflective, and analyze how signatures can be observed via non-classical correlations of the outgoing photon field.

  6. Extraction of Late Summer Sea Ice Properties from Polarimetric SAR Features in C- and X-Band

    NASA Astrophysics Data System (ADS)

    Fors, Ane S.; Brekke, Camilla; Gerland, Sebastian; Doulgeris, Anthony P.; Eltoft, Torbjørn

    2015-04-01

    In this study we examine the potential use of six polarimetric features for interpretation of late summer sea ice types. Five high-resolution C and X-band scenes were recorded in the Fram Strait covering fast first-year and old sea ice. In addition sea ice thickness, surface roughness and melt pond fraction were collected during a helicopter flight at the study area. From the SAR scenes, six polarimetric features were extracted. Along sections of the track of the helicopter flight, the mean of the SAR features were compared to mean values of the properties measured during the helicopter flight. The results reveal relations between several of the SAR features and the geophysical properties measured in C-band, and weak relations in X-band.

  7. Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Kaiser, W. J.; Manion, S. J.; Milliken, S. J.; Pike, W. T.; Fathauer, R. W.

    1995-01-01

    The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

  8. DSN 100-meter X and S band microwave antenna design and performance

    NASA Technical Reports Server (NTRS)

    Williams, W. F.

    1978-01-01

    The RF performance is studied for large reflector antenna systems (100 meters) when using the high efficiency dual shaped reflector approach. An altered phase was considered so that the scattered field from a shaped surface could be used in the JPL efficiency program. A new dual band (X-S) microwave feed horn was used in the shaping calculations. A great many shaping calculations were made for various horn sizes and locations and final RF efficiencies are reported. A conclusion is reached that when using the new dual band horn, shaping should probably be performed using the pattern of the lower frequency

  9. Proton structure functions at small x

    DOE PAGES

    Hentschinski, Martin

    2015-11-03

    Proton structure functions are measured in electron-proton collision through inelastic scattering of virtual photons with virtuality Q on protons; x denotes the momentum fraction carried by the struck parton. Proton structure functions are currently described with excellent accuracy in terms of scale dependent parton distribution functions, defined in terms of collinear factorization and DGLAP evolution in Q. With decreasing x however, parton densities increase and are ultimately expected to saturate. In this regime DGLAP evolution will finally break down and non-linear evolution equations w.r.t x are expected to take over. In the first part of the talk we present recentmore » result on an implementation of physical DGLAP evolution. Unlike the conventional description in terms of parton distribution functions, the former describes directly the Q dependence of the measured structure functions. It is therefore physical insensitive to factorization scheme and scale ambiguities. It therefore provides a more stringent test of DGLAP evolution and eases the manifestation of (non-linear) small x effects. It however requires a precise measurement of both structure functions F 2 and F L, which will be only possible at future facilities, such as an Electron Ion Collider. In the second part we present a recent analysis of the small x region of the combined HERA data on the structure function F 2. We demonstrate that (linear) next-to-leading order BFKL evolution describes the effective Pomeron intercept, determined from the combined HERA data, once a resummation of collinear enhanced terms is included and the renormalization scale is fixed using the BLM optimal scale setting procedure. We also provide a detailed description of the Q and x dependence of the full structure functions F 2 in the small x region, as measured at HERA. As a result, predictions for the structure function F L are found to be in agreement with the existing HERA data.« less

  10. Investigation of structural, electronic, elastic and optical properties of Cd{sub 1-x-y}Zn{sub x}Hg{sub y}Te alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tamer, M., E-mail: mehmet.tamer@zirve.edu.tr

    2016-06-15

    Structural, optical and electronic properties and elastic constants of Cd1{sub -x-y}Zn{sub x} Hg{sub y}Te alloys have been studied by employing the commercial code Castep based on density functional theory. The generalized gradient approximation and local density approximation were utilized as exchange correlation. Using elastic constants for compounds, bulk modulus, band gap, Fermi energy and Kramers–Kronig relations, dielectric constants and the refractive index have been found through calculations. Apart from these, X-ray measurements revealed elastic constants and Vegard’s law. It is seen that results obtained from theory and experiments are all in agreement.

  11. High-order harmonic generation from a two-dimensional band structure

    NASA Astrophysics Data System (ADS)

    Jin, Jian-Zhao; Xiao, Xiang-Ru; Liang, Hao; Wang, Mu-Xue; Chen, Si-Ge; Gong, Qihuang; Peng, Liang-You

    2018-04-01

    In the past few years, harmonic generation in solids has attracted tremendous attention. Recently, some experiments of two-dimensional (2D) monolayer or few-layer materials have been carried out. These studies demonstrated that harmonic generation in the 2D case shows a strong dependence on the laser's orientation and ellipticity, which calls for a quantitative theoretical interpretation. In this work, we carry out a systematic study on the harmonic generation from a 2D band structure based on a numerical solution to the time-dependent Schrödinger equation. By comparing with the 1D case, we find that the generation dynamics can have a significant difference due to the existence of many crossing points in the 2D band structure. In particular, the higher conduction bands can be excited step by step via these crossing points and the total contribution of the harmonic is given by the mixing of transitions between different clusters of conduction bands to the valence band. We also present the orientation dependence of the harmonic yield on the laser polarization direction.

  12. Development for a supercompact X -band pulse compression system and its application at SLAC

    DOE PAGES

    Wang, Juwen W.; Tantawi, Sami G.; Xu, Chen; ...

    2017-11-09

    Here, we have successfully designed, fabricated, installed, and tested a super compact X -band SLAC Energy Doubler system at SLAC. It is composed of an elegant 3 dB coupler–mode converter–polarizer coupled to a single spherical energy storage cavity with high Q 0 of 94000 and a diameter less than 12 cm. The available rf peak power of 50 MW can be compressed to a peak average power of more than 200 MW in order to double the kick for the electron bunches in a rf transverse deflector system and greatly improve the measurement resolution of both the electron bunches andmore » the x-ray free-electron laser pulses. The design physics and fabrication as well as the measurement results will be presented in detail. High-power operation has demonstrated the excellent performance of this rf compression system without rf breakdown, sign of pulse heating, and rf radiation.« less

  13. Development for a supercompact X -band pulse compression system and its application at SLAC

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Juwen W.; Tantawi, Sami G.; Xu, Chen

    Here, we have successfully designed, fabricated, installed, and tested a super compact X -band SLAC Energy Doubler system at SLAC. It is composed of an elegant 3 dB coupler–mode converter–polarizer coupled to a single spherical energy storage cavity with high Q 0 of 94000 and a diameter less than 12 cm. The available rf peak power of 50 MW can be compressed to a peak average power of more than 200 MW in order to double the kick for the electron bunches in a rf transverse deflector system and greatly improve the measurement resolution of both the electron bunches andmore » the x-ray free-electron laser pulses. The design physics and fabrication as well as the measurement results will be presented in detail. High-power operation has demonstrated the excellent performance of this rf compression system without rf breakdown, sign of pulse heating, and rf radiation.« less

  14. GEOS-C noncoherent C-band transponder test procedure for spacecraft level tests

    NASA Technical Reports Server (NTRS)

    Selser, A. R.

    1973-01-01

    Test procedures necessary for the calibration and performance verification of the noncoherent C-band transponders after spacecraft hardware integration, but prior to spacecraft/launch vehicle integration are presented.

  15. Synthesis, structural and optical characterization of APbX{sub 3} (A=methylammonium, dimethylammonium, trimethylammonium; X=I, Br, Cl) hybrid organic-inorganic materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mancini, Alessandro; Quadrelli, Paolo; Amoroso, Giuseppe

    2016-08-15

    In this paper we report the synthesis, the crystal structure and the optical response of APbX{sub 3} (A=MA, DMA, and TMA; X=I, Br) hybrid organic-inorganic materials including some new phases. We observe that as the cation group increases in size, the optical absorption edge shifts to higher energies with energy steps which are systematic and independent on the anion. A linear correlation between the optical bad gap and the tolerance factor has been shown for the series of samples investigated. - Graphical abstract: The crystal structure and the optical response of the two series of hybrid organic-inorganic materials APbX{sub 3}more » (A=MA, DMA, and TMA; X=I, Br), which include some new phases, are reported. A dependence of crystal structure and band-gap with tolerance factor is shown. Display Omitted - Highlights: • DMAPbI{sub 3}, TMAPbI{sub 3} and TMAPbBr{sub 3} are reported as new hybrid organic-inorganic compounds. • Crystal structure and optical properties as a function of the number of methyl groups are provided. • Correlation between structure and optical properties are given as a function of tolerance factor.« less

  16. Composition and Band Gap Tailoring of Crystalline (GaN)1- x(ZnO) x Solid Solution Nanowires for Enhanced Photoelectrochemical Performance.

    PubMed

    Li, Jing; Liu, Baodan; Wu, Aimin; Yang, Bing; Yang, Wenjin; Liu, Fei; Zhang, Xinglai; An, Vladimir; Jiang, Xin

    2018-05-07

    Photoelectrochemical water splitting has emerged as an effective artificial photosynthesis technology to generate clean energy of H 2 from sunlight. The core issue in this reaction system is to develop a highly efficient photoanode with a large fraction of solar light absorption and greater active surface area. In this work, we take advantage of energy band engineering to synthesize (GaN) 1- x (ZnO) x solid solution nanowires with ZnO contents ranging from 10.3% to 47.6% and corresponding band gap tailoring from 3.08 to 2.77 eV on the basis of the Au-assisted VLS mechanism. The morphology of nanowires directly grown on the conductive substrate facilitates the charge transfer and simultaneously improves the surface reaction sites. As a result, a photocurrent approximately 10 times larger than that for a conventional powder-based photoanode is obtained, which indicates the potential of (GaN) 1- x (ZnO) x nanowires in the preparation of superior photoanodes for enhanced water splitting. It is anticipated that the water-splitting capability of (GaN) 1- x (ZnO) x nanowire can be further increased through alignment control for enhanced visible light absorption and reduction of charge transfer resistance.

  17. Synthesis, X-ray structure, magnetic resonance, and DFT analysis of a soluble copper(II) phthalocyanine lacking C-H bonds.

    PubMed

    Moons, Hans; Łapok, Łukasz; Loas, Andrei; Van Doorslaer, Sabine; Gorun, Sergiu M

    2010-10-04

    The synthesis, crystal structure, and electronic properties of perfluoro-isopropyl-substituted perfluorophthalocyanine bearing a copper atom in the central cavity (F(64)PcCu) are reported. While most halogenated phthalocyanines do not exhibit long-term order sufficient to form large single crystals, this is not the case for F(64)PcCu. Its crystal structure was determined by X-ray analysis and linked to the electronic properties determined by electron paramagnetic resonance (EPR). The findings are corroborated by density functional theory (DFT) computations, which agree well with the experiment. X-band continuous-wave EPR spectra of undiluted F(64)PcCu powder, indicate the existence of isolated metal centers. The electron-withdrawing effect of the perfluoroalkyl (R(f)) groups significantly enhances the complexes solubility in organic solvents like alcohols, including via their axial coordination. This coordination is confirmed by X-band (1)H HYSCORE experiments and is also seen in the solid state via the X-ray structure. Detailed X-band CW-EPR, X-band Davies and Mims ENDOR, and W-band electron spin-echo-detected EPR studies of F(64)PcCu in ethanol allow the determination of the principal g values and the hyperfine couplings of the metal, nitrogen, and fluorine nuclei. Comparison of the g and metal hyperfine values of F(64)PcCu and other PcCu complexes in different matrices reveals a dominant effect of the matrix on these EPR parameters, while variations in the ring substituents have only a secondary effect. The relatively strong axial coordination occurs despite the diminished covalency of the C-N bonds and potentially weakening Jahn-Teller effects. Surprisingly, natural abundance (13)C HYSCORE signals could be observed for a frozen ethanol solution of F(64)PcCu. The (13)C nuclei contributing to the HYSCORE spectra could be identified as the pyrrole carbons by means of DFT. Finally, (19)F ENDOR and easily observable paramagnetic NMR were found to relate well to the

  18. Shear-band thickness and shear-band cavities in a Zr-based metallic glass

    DOE PAGES

    Liu, C.; Roddatis, V.; Kenesei, P.; ...

    2017-08-14

    Strain localization into shear bands in metallic glasses is typically described as a mechanism that occurs at the nano-scale, leaving behind a shear defect with a thickness of 10–20 nm. Here we sample the structure of a single system-spanning shear band that has carried all plastic flow with high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and high-energy x-ray tomography (XRT). It is found that the shear-band thickness and the density change relative to the matrix sensitively depend on position along the shear band. A wide distribution of shear-band thickness (10 nm–210 nm) and density change (–1% to –12%)more » is revealed. There is no obvious correlation between shear-band thickness and density change, but larger thicknesses correspond typically to higher density changes. More than 100 micron-size shear-band cavities were identified on the shear-band plane, and their three-dimensional arrangement suggests a strongly fluctuating local curvature of the shear plane. As a result, these findings urge for a more complex view of a shear band than a simple nano-scale planar defect.« less

  19. Shear-band thickness and shear-band cavities in a Zr-based metallic glass

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, C.; Roddatis, V.; Kenesei, P.

    Strain localization into shear bands in metallic glasses is typically described as a mechanism that occurs at the nano-scale, leaving behind a shear defect with a thickness of 10–20 nm. Here we sample the structure of a single system-spanning shear band that has carried all plastic flow with high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and high-energy x-ray tomography (XRT). It is found that the shear-band thickness and the density change relative to the matrix sensitively depend on position along the shear band. A wide distribution of shear-band thickness (10 nm–210 nm) and density change (–1% to –12%)more » is revealed. There is no obvious correlation between shear-band thickness and density change, but larger thicknesses correspond typically to higher density changes. More than 100 micron-size shear-band cavities were identified on the shear-band plane, and their three-dimensional arrangement suggests a strongly fluctuating local curvature of the shear plane. As a result, these findings urge for a more complex view of a shear band than a simple nano-scale planar defect.« less

  20. Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

    NASA Astrophysics Data System (ADS)

    Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2018-02-01

    A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

  1. Ab initio electronic structure calculations for metallic intermediate band formation in photovoltaic materials

    NASA Astrophysics Data System (ADS)

    Wahnón, P.; Tablero, C.

    2002-04-01

    A metallic isolated band in the middle of the band gap of several III-V semiconductors has been predicted as photovoltaic materials with the possibility of providing substantially enhanced efficiencies. We have investigated the electronic band structures and lattice constants of GanAsmM and GanPmM with M=Sc, Ti, V, and Cr, to identify whether this isolated band is likely to exist by means of accurate calculations. For this task, we use the SIESTA program, an ab initio periodic density-functional method, fully self consistent in the local-density approximation. Norm-conserving, nonlocal pseudopotentials and confined linear combination of atomic orbitals have been used. We have carried out a case study of GanAsmTi and GanPmTi energy-band structure including analyses of the effect of the basis set, fine k-point mesh to ensure numerical convergence, structural parameters, and generalized gradient approximation for exchange and correlation corrections. We find the isolated intermediate band when one Ti atom replaces the position of one As (or P) atom in the crystal structure. For this kind of compound we show that the intermediate band relative position inside the band gap and width are sensitive to the dynamic relaxation of the crystal and the size of the basis set.

  2. Evaluating the potential use of a high-resolution X-band polarimetric radar observations in Urban Hydrology

    NASA Astrophysics Data System (ADS)

    Anagnostou, Marios N.; Kalogiros, John; Marzano, Frank S.; Anagnostou, Emmanouil N.; Baldini, Luca; Nikolopoulos, EfThymios; Montopoli, Mario; Picciotti, Errico

    2014-05-01

    The Mediterranean area concentrates the major natural risks related to the water cycle, including heavy precipitation and flash-flooding during the fall season. Every year in central and south Europe we witness several fatal and economical disasters from severe storm rainfall triggering Flash Floods, and its impacts are increasing worldwide, but remain very difficult to manage. The spatial scale of flash flood occurrence is such that its vulnerability is often focused on dispersed urbanization, transportation and tourism infrastructures (De Marchi and Scolobig 2012). Urbanized and industrialized areas shows peculiar hydrodynamic and meteo-oceanographic features and they concentrate the highest rates of flash floods and fatal disasters. The main causes of disturbance being littoral urban development and harbor activities, the building of littoral rail- and highways, and the presence of several polluted discharges. All the above mentioned characteristics limit our ability to issue timely flood warnings. Precipitation estimates based on raingauge networks are usually associated with low coverage density, particularly at high altitudes. On the other hand, operational weather radar networks may provide valuable information of precipitation at these regimes but reliability of their estimates is often limited due to retrieval (e.g. variability in the reflectivity-to-rainfall relationship) and spatial extent constrains (e.g. blockage issues, overshooting effects). As a result, we currently lack accurate precipitation estimates over urban complex terrain areas, which essentially means that we lack accurate knowledge of the triggering factor for a number of hazards like flash floods and debris flows/landslides occurring in those areas. A potential solution to overcome sampling as well as retrieval uncertainty limitations of current observational networks might be the use of network of low-power dual-polarization X-band radars as complement to raingauges and gap-filling to

  3. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

    NASA Astrophysics Data System (ADS)

    Vasallo, B. G.; González, T.; Talbo, V.; Lechaux, Y.; Wichmann, N.; Bollaert, S.; Mateos, J.

    2018-01-01

    III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices for low-power digital applications. To assist the development of these devices from the physical point of view, a Monte Carlo (MC) model which includes impact ionization processes and band-to-band tunneling is presented. The MC simulator reproduces the I-V characteristics of experimental ungated In0.53Ga0.47As 100 nm PIN diodes, in which tunneling emerges for lower applied voltages than impact ionization events, thus being appropriate for TFETs. When the structure is enlarged up to 200 nm, the ON-state is achieved by means of impact ionization processes; however, the necessary applied voltage is higher, with the consequent drawback for low-power applications. In InAs PIN ungated structures, the onset of both impact ionization processes and band-to-band tunneling takes place for similar applied voltages, lower than 1 V; thus they are suitable for the design of low-power I-MOSFETs.

  4. Prototyping high-gradient mm-wave accelerating structures

    DOE PAGES

    Nanni, Emilio A.; Dolgashev, Valery A.; Haase, Andrew; ...

    2017-01-01

    We present single-cell accelerating structures designed for high-gradient testing at 110 GHz. The purpose of this work is to study the basic physics of ultrahigh vacuum RF breakdown in high-gradient RF accelerators. The accelerating structures are π-mode standing-wave cavities fed with a TM 01 circular waveguide. The structures are fabricated using precision milling out of two metal blocks, and the blocks are joined with diffusion bonding and brazing. The impact of fabrication and joining techniques on the cell geometry and RF performance will be discussed. First prototypes had a measured Q 0 of 2800, approaching the theoretical design value ofmore » 3300. The geometry of these accelerating structures are as close as practical to singlecell standing-wave X-band accelerating structures more than 40 of which were tested at SLAC. This wealth of X-band data will serve as a baseline for these 110 GHz tests. Furthermore, the structures will be powered with short pulses from a MW gyrotron oscillator. RF power of 1 MW may allow an accelerating gradient of 400 MeV/m to be reached.« less

  5. Analysis and machine mapping of the distribution of band recoveries

    USGS Publications Warehouse

    Cowardin, L.M.

    1977-01-01

    A method of calculating distance and bearing from banding site to recovery location based on the solution of a spherical triangle is presented. X and Y distances on an ordinate grid were applied to computer plotting of recoveries on a map. The advantages and disadvantages of tables of recoveries by State or degree block, axial lines, and distance of recovery from banding site for presentation and comparison of the spatial distribution of band recoveries are discussed. A special web-shaped partition formed by concentric circles about the point of banding and great circles at 30-degree intervals through the point of banding has certain advantages over other methods. Comparison of distributions by means of a X? contingency test is illustrated. The statistic V = X?/N can be used as a measure of difference between two distributions of band recoveries and its possible use is illustrated as a measure of the degree of migrational homing.

  6. High-resolution F T spectrum of A 2 Π r - X 2 Σ + band system of MgCl

    NASA Astrophysics Data System (ADS)

    Saksena, M. D.; Deo, M. N.; Sunanda, K.; Behere, S. H.; Jadhav, Ashok

    2011-03-01

    The emission spectrum of the A 2 Π r - X 2 Σ + band system of MgCl molecule (360-380 nm) has been recorded on BOMEM DA8 Fourier transform spectrometer at an apodized resolution of 0.035 cm-1. The spectra have been excited under flowing conditions in a demountable stainless steel hollow cathode lamp (400 V, 250 mA) containing anhydrous MgCl2 and Ar. The resulting spectra are very intense and the 0-0, 1-1, 1-0 bands of A 2 Π 1/2- X 2 Σ + sub-transition and the 0-0 band of A 2 Π 3/2- X 2 Σ + sub-transition have been rotationally analyzed. Improved molecular constants have been derived using a least-squares fit program in which optical data of earlier analyzed 0-1 and 0-2 bands ( A 2 Π 1/2- X 2 Σ +) was also included. The Λ-doubling constants in the v' = 0, 1 levels of the A 2 Π 1/2 sub-state are as expected, i.e. p 1 > p 0, where as it is found that the spin-doubling constants of the v″ = 0, 1 and 2 levels of the ground state X 2 Σ +, decrease with the increase in v, i.e. γ 0 > γ 1 > γ 2. This is indicative of the presence of some nearby state, influencing the spin-doubling.

  7. Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)1-x(ZnO)x solid solution.

    PubMed

    Wu, Aimin; Li, Jing; Liu, Baodan; Yang, Wenjin; Jiang, Yanan; Liu, Lusheng; Zhang, Xinglai; Xiong, Changmin; Jiang, Xin

    2017-02-21

    (GaN) 1-x (ZnO) x solid solution has attracted extensive attention due to its feasible band-gap tunability and excellent photocatalytic performance in overall water splitting. However, its potential application in the photodegradation of organic pollutants and environmental processing has rarely been reported. In this study, we developed a rapid synthesis process to fabricate porous (GaN) 1-x (ZnO) x solid solution with a tunable band gap in the range of 2.38-2.76 eV for phenol photodegradation. Under visible-light irradiation, (GaN) 0.75 (ZnO) 0.25 solid solution achieved the highest photocatalytic performance compared to other (GaN) 1-x (ZnO) x solid solutions with x = 0.45, 0.65 and 0.85 due to its higher redox capability and lower lattice deformation. Slight Ag decoration with a content of 1 wt% on the surface of the (GaN) 0.75 (ZnO) 0.25 solid solution leads to a significant enhancement in phenol degradation, with a reaction rate eight times faster than that of pristine (GaN) 0.75 (ZnO) 0.25 . Interestingly, phenol in aqueous solution (10 mg L -1 ) can also be completely degraded within 60 min, even under the direct exposure of sunlight irradiation. The photocurrent response indicates that the enhanced photocatalytic activity of (GaN) 0.75 (ZnO) 0.25 /Ag is directly induced by the improved transfer efficiency of the photogenerated electrons at the interface. The excellent phenol degradation performance of (GaN) 1-x (ZnO) x /Ag further broadens their promising photocatalytic utilization in environmental processing, besides in overall water splitting for hydrogen production.

  8. Electronic band structure effects in the stopping of protons in copper [Electronic band structure non-linear effects in the stopping of protons in copper

    DOE PAGES

    Quashie, Edwin E.; Saha, Bidhan C.; Correa, Alfredo A.

    2016-10-05

    Here, we present an ab initio study of the electronic stopping power of protons in copper over a wide range of proton velocities v = 0.02–10a.u. where we take into account nonlinear effects. Time-dependent density functional theory coupled with molecular dynamics is used to study electronic excitations produced by energetic protons. A plane-wave pseudopotential scheme is employed to solve the time-dependent Kohn-Sham equations for a moving ion in a periodic crystal. The electronic excitations and the band structure determine the stopping power of the material and alter the interatomic forces for both channeling and off-channeling trajectories. Our off-channeling results aremore » in quantitative agreement with experiments, and at low velocity they unveil a crossover region of superlinear velocity dependence (with a power of ~1.5) in the velocity range v = 0.07–0.3a.u., which we associate to the copper crystalline electronic band structure. The results are rationalized by simple band models connecting two separate regimes. We find that the limit of electronic stopping v → 0 is not as simple as phenomenological models suggest and it is plagued by band-structure effects.« less

  9. Pressure induced band inversion, electronic and structural phase transitions in InTe: A combined experimental and theoretical study

    NASA Astrophysics Data System (ADS)

    Rajaji, V.; Pal, Koushik; Sarma, Saurav Ch.; Joseph, B.; Peter, Sebastian C.; Waghmare, Umesh V.; Narayana, Chandrabhas

    2018-04-01

    We report high-pressure Raman scattering measurements on the tetragonal phase of InTe corroborated with the first-principles density functional theory and synchrotron x-ray diffraction measurements. Anomalous pressure-dependent linewidths of the A1 g and Eg phonon modes provide evidence of an isostructural electronic transition at ˜3.6 GPa . The first-principles theoretical analysis reveals that it is associated with a semiconductor-to-metal transition due to increased density of states near the Fermi level. Further, this pressure induced metallization acts as a precursor for structural phase transition to a face centered cubic phase (F m 3 ¯m ) at ˜6.0 GPa . Interestingly, theoretical results reveal a pressure induced band inversion at the Z and M points of the Brillouin zone corresponding to pressures ˜1.0 and ˜1.4 GPa , respectively. As the parity of bands undergoing inversions is the same, the topology of the electronic state remains unchanged, and hence InTe retains its trivial band topology (Z2=0 ) . The pressure dependent behavior of the A1 g and Eg modes can be understood based on the results from the synchrotron x-ray diffraction, which shows anisotropic compressibility of the lattice in the a and c directions. Our Raman measurements up to ˜19 GPa further confirms the pressure induced structural phase transition from a face-centered to primitive cubic (F m 3 ¯m to P m 3 ¯m ) at P ˜15 GPa .

  10. Reconfigurable wave band structure of an artificial square ice

    DOE PAGES

    lacocca, Ezio; Gliga, Sebastian; Stamps, Robert L.; ...

    2016-04-18

    Artificial square ices are structures composed of magnetic nanoelements arranged on the sites of a twodimensional square lattice, such that there are four interacting magnetic elements at each vertex, leading to geometrical frustration. Using a semianalytical approach, we show that square ices exhibit a rich spin-wave band structure that is tunable both by external magnetic fields and the magnetization configuration of individual elements. Internal degrees of freedom can give rise to equilibrium states with bent magnetization at the element edges leading to characteristic excitations; in the presence of magnetostatic interactions these form separate bands analogous to impurity bands in semiconductors.more » Full-scale micromagnetic simulations corroborate our semianalytical approach. Our results show that artificial square ices can be viewed as reconfigurable and tunable magnonic crystals that can be used as metamaterials for spin-wave-based applications at the nanoscale.« less

  11. Reconfigurable wave band structure of an artificial square ice

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    lacocca, Ezio; Gliga, Sebastian; Stamps, Robert L.

    Artificial square ices are structures composed of magnetic nanoelements arranged on the sites of a twodimensional square lattice, such that there are four interacting magnetic elements at each vertex, leading to geometrical frustration. Using a semianalytical approach, we show that square ices exhibit a rich spin-wave band structure that is tunable both by external magnetic fields and the magnetization configuration of individual elements. Internal degrees of freedom can give rise to equilibrium states with bent magnetization at the element edges leading to characteristic excitations; in the presence of magnetostatic interactions these form separate bands analogous to impurity bands in semiconductors.more » Full-scale micromagnetic simulations corroborate our semianalytical approach. Our results show that artificial square ices can be viewed as reconfigurable and tunable magnonic crystals that can be used as metamaterials for spin-wave-based applications at the nanoscale.« less

  12. InAs Band-Edge Exciton Fine Structure

    DTIC Science & Technology

    2015-07-29

    Chapter 1 InAs Band-Edge Exciton Fine Structure 1.1 Contributions This work was carried out in collaboration with Oscar Sandoval, a summer student at...diffusion,1,2 charg- ing,2,3 and excitonic fine structure.1,3–9 While spectral diffusion and charging are most likely photoinduced effects and thus can be...unavoidable. A complete understanding of the excitonic 1 Distribution A: Public Release energy landscape enables us to determine dephasing rates

  13. Search for the OH (X(2)Pi) Meinel band emission in meteors as a tracer of mineral water in comets: detection of N(2)(+) (A-X)

    NASA Technical Reports Server (NTRS)

    Jenniskens, Peter; Laux, Christophe O.

    2004-01-01

    We report the discovery of the N(2)(+) A-X Meinel band in the 780-840 nm meteor emission from two Leonid meteoroids that were ejected less than 1000 years ago by comet 55P/Tempel-Tuttle. Our analysis indicates that the N(2)(+) molecule is at least an order of magnitude less abundant than expected, possibly as a result of charge transfer reactions with meteoric metal atoms. This new band was found while searching for rovibrational transitions in the X(2)Pi electronic ground state of OH (the OH Meinel band), a potential tracer of water bound to minerals in cometary matter. The electronic A-X transition of OH has been identified in other Leonid meteors. We did not detect this OH Meinel band, which implies that the excited A state is not populated by thermal excitation but by a mechanism that directly produces OH in low vibrational levels of the excited A(2)Sigma state. Ultraviolet dissociation of atmospheric or meteoric water vapor is such a mechanism, as is the possible combustion of meteoric organics.

  14. Ab-initio study of electronic structure and magnetic properties of half-metallic Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5} alloys

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Go, Anna, E-mail: annago@alpha.uwb.edu.pl

    2014-11-15

    Ab-initio electronic structure calculations are carried out for quinternary Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5} alloys. When x=0 the alloy is half-metallic ferromagnet, with magnetic moment following the Slater–Pauling rule. Replacement of Mn by V, changes its electronic and magnetic structure. V-doped alloys exhibit half-metallic behavior for x≤0.25. However, even for higher V concentrations, electronic spin polarization is still very high, what makes the alloys interesting for spintronic applications. - Graphical abstract: Densities of states of Fe{sub 2}MnSi{sub 0.5}Al{sub 0.5} and magnetic moments of Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5}. - Highlights: • Fe{sub 2}MnSi{sub 0.5}Al{sub 0.5} is a half-metallicmore » ferromagnet with a minority band gap of 0.49 eV. • Half-metallic band gap is very stable against the change of the lattice parameter. • Half-metallic band gap is obtained for Fe{sub 2}Mn{sub 1−x}V{sub x}Si{sub 0.5}Al{sub 0.5} for x≤0.25. • Electronic spin polarization is very high and equal to at least 95% for x≤0.625. • The main carrier of magnetism of the compound is manganese.« less

  15. Electronic structure and bonding interactions in Ba1- x Sr x Zr0.1Ti0.9O3 ceramics

    NASA Astrophysics Data System (ADS)

    Mangaiyarkkarasi, Jegannathan; Sasikumar, Subramanian; Saravanan, Olai Vasu; Saravanan, Ramachandran

    2017-06-01

    An investigation on the precise electronic structure and bonding interactions has been carried out on Ba1- x Sr x Zr0.1Ti0.9O3 (short for BSZT, x = 0, 0.05, 0.07 and 0.14) ceramic systems prepared via high-temperature solid state reaction technique. The influence of Sr doping on the BSZT structure has been examined by characterizing the prepared samples using PXRD, UV-visible spectrophotometry, SEM and EDS. Powder profile refinement of X-ray data confirms that all the synthesized samples have been crystallized in cubic perovskite structure with single phase. Charge density distribution of the BSZT systems has been completely analyzed by the maximum entropy method (MEM). Co-substitution of Sr at the Ba site and Zr at the Ti site into the BaTiO3 structure presents the ionic nature between Ba and O ions and the covalent nature between Ti and O ions, revealed from MEM calculations. Optical band gap values have been evaluated from UV-visible absorption spectra. Particles with irregular shapes and well defined grain boundaries are clearly visualized from SEM images. The phase purity of the prepared samples is further confirmed by EDS qualitative spectral analysis.

  16. Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k·p modeling

    NASA Astrophysics Data System (ADS)

    Ryczko, K.; Sek, G.; Sitarek, P.; Mika, A.; Misiewicz, J.; Langer, F.; Höfling, S.; Forchel, A.; Kamp, M.

    2013-06-01

    Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 mo in QWs with 1.2% N and 0.15 mo for the case of larger N content of 2.2%.

  17. Band gap and band offset of (GaIn)(PSb) lattice matched to InP

    NASA Astrophysics Data System (ADS)

    Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

    2005-07-01

    Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

  18. Photonic band structures in one-dimensional photonic crystals containing Dirac materials

    NASA Astrophysics Data System (ADS)

    Wang, Lin; Wang, Li-Gang

    2015-09-01

    We have investigated the band structures of one-dimensional photonic crystals (1DPCs) composed of Dirac materials and ordinary dielectric media. It is found that there exist an omnidirectional passing band and a kind of special band, which result from the interaction of the evanescent and propagating waves. Due to the interface effect and strong dispersion, the electromagnetic fields inside the special bands are strongly enhanced. It is also shown that the properties of these bands are invariant upon the lattice constant but sensitive to the resonant conditions.

  19. Hyper-X Engine Testing in the NASA Langley 8-Foot High Temperature Tunnel

    NASA Technical Reports Server (NTRS)

    Huebner, Lawrence D.; Rock, Kenneth E.; Witte, David W.; Ruf, Edward G.; Andrews, Earl H., Jr.

    2000-01-01

    Airframe-integrated scramjet engine tests have 8 completed at Mach 7 in the NASA Langley 8-Foot High Temperature Tunnel under the Hyper-X program. These tests provided critical engine data as well as design and database verification for the Mach 7 flight tests of the Hyper-X research vehicle (X-43), which will provide the first-ever airframe- integrated scramjet flight data. The first model tested was the Hyper-X Engine Model (HXEM), and the second was the Hyper-X Flight Engine (HXFE). The HXEM, a partial-width, full-height engine that is mounted on an airframe structure to simulate the forebody features of the X-43, was tested to provide data linking flowpath development databases to the complete airframe-integrated three-dimensional flight configuration and to isolate effects of ground testing conditions and techniques. The HXFE, an exact geometric representation of the X-43 scramjet engine mounted on an airframe structure that duplicates the entire three-dimensional propulsion flowpath from the vehicle leading edge to the vehicle base, was tested to verify the complete design as it will be flight tested. This paper presents an overview of these two tests, their importance to the Hyper-X program, and the significance of their contribution to scramjet database development.

  20. AgRISTARS. Supporting research: MARS x-band scatterometer

    NASA Technical Reports Server (NTRS)

    Ulaby, F. T. (Principal Investigator); Gabel, P. F., Jr.; Brunfeldt, D. R.

    1981-01-01

    The design, construction, and data collection procedures of the mobile agricultural radar sensor (MARS) x band scatterometer are described. This system is an inexpensive, highly mobile, truck mounted FM-CW radar operating at a center frequency of 10.2 GHz. The antennas, which allow for VV and VH polarizations, are configured in a side looking mode that allows for drive by data collection. This configuration shortens fieldwork time considerably while increasing statistical confidence in the data. Both internal calibration, via a delay line, and external calibration with a Luneberg lens are used to calibrate the instrument in terms of sigma(o). The radar scattering cross section per unit area, sigma(o), is found using the radar equation.

  1. Development of a Dielectric-Loaded Accelerator Test Facility Based on an X-Band Magnicon Amplifier

    NASA Astrophysics Data System (ADS)

    Gold, S. H.; Kinkead, A. K.; Gai, W.; Power, J. G.; Konecny, R.; Jing, C.; Tantawi, S. G.; Nantista, C. D.; Hu, Y.; Du, X.; Tang, C.; Lin, Y.; Bruce, R. W.; Bruce, R. L.; Fliflet, A. W.; Lewis, D.

    2006-01-01

    The Naval Research Laboratory (NRL) and Argonne National Laboratory (ANL), in collaboration with the Stanford Linear Accelerator Center (SLAC), are developing a dielectric-loaded accelerator (DLA) test facility powered by the 11.424-GHz magnicon amplifier that was developed jointly by NRL and Omega-P, Inc. Thus far, DLA structures developed by ANL have been tested at the NRL Magnicon Facility without injected electrons, including tests of alumina and magnesium calcium titanate structures at gradients up to ˜8 MV/m. The next step is to inject electrons in order to build a compact DLA test accelerator. The Accelerator Laboratory of Tsinghua University in Beijing, China has developed a 5-MeV electron injector for the accelerator, and SLAC is developing a means to combine the two magnicon output arms, and to drive the injector and an accelerator section with separate control of the power ratio and relative phase. Also, RWBruce Associates, working with NRL, is developing a means to join ceramic tubes to produce long accelerating sections using a microwave brazing process. The installation and commissioning of the first dielectric-loaded test accelerator, including injector, DLA structure, and spectrometer, should take place within the next year.

  2. Optical and magneto-optical effects in Hg{sub 1-x}Cd{sub x}Cr{sub 2}Se{sub 4} (0 ⩽ x ⩽ 1) single crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sukhorukov, Yu. P., E-mail: suhorukov@imp.uran.ru; Telegin, A. V.; Bebenin, N. G.

    2015-09-15

    The concentration, temperature, and magnetic-field dependences of the magnetoreflection and magnetotransmission of natural light in the infrared spectral range and the Kerr effect in single crystals of ferromagnetic Hg{sub 1-x}Cd{sub x}Cr{sub 2}Se{sub 4} (0 ⩽ x ⩽ 1) spinels have been studied. A relationship of the magneto-optical properties to the electronic band structure of spinels has been established. The most significant changes in the spectra of magnetoreflection, magnetotransmission, and the Kerr effect are shown to be observed for 0.1 < x < 0.25 and are attributable to a rearrangement of the band structure as the composition changes.

  3. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Romaka, V. A., E-mail: vromaka@polynet.lviv.ua; Rogl, P.; Romaka, V. V.

    2015-03-15

    The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, themore » generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.« less

  4. Landsat Data Continuity Mission (LDCM) - Optimizing X-Band Usage

    NASA Technical Reports Server (NTRS)

    Garon, H. M.; Gal-Edd, J. S.; Dearth, K. W.; Sank, V. I.

    2010-01-01

    The NASA version of the low-density parity check (LDPC) 7/8-rate code, shortened to the dimensions of (8160, 7136), has been implemented as the forward error correction (FEC) schema for the Landsat Data Continuity Mission (LDCM). This is the first flight application of this code. In order to place a 440 Msps link within the 375 MHz wide X band we found it necessary to heavily bandpass filter the satellite transmitter output . Despite the significant amplitude and phase distortions that accompanied the spectral truncation, the mission required BER is maintained at < 10(exp -12) with less than 2 dB of implementation loss. We utilized a band-pass filter designed ostensibly to replicate the link distortions to demonstrate link design viability. The same filter was then used to optimize the adaptive equalizer in the receiver employed at the terminus of the downlink. The excellent results we obtained could be directly attributed to the implementation of the LDPC code and the amplitude and phase compensation provided in the receiver. Similar results were obtained with receivers from several vendors.

  5. Structure of the X-ray source in the Virgo cluster of galaxies

    NASA Technical Reports Server (NTRS)

    Gorenstein, P.; Fabricant, D.; Topka, K.; Tucker, W.; Harnden, F. R., Jr.

    1977-01-01

    High-angular-resolution observations in the 0.15-1.5-keV band with an imaging X-ray telescope shows the extended X-ray source in the Virgo cluster of galaxies to be a diffuse halo of about 15 arcmin core radius surrounding M87. The angular structure of the surface brightness is marginally consistent with either of two simple models: (1) an isothermal (or adiabatic or hydrostatic) sphere plus a point source at M87 accounting for 12% of the total 0.5-1.5-keV intensity or (2) a power-law function without a discrete point source. No evidence for a point source is seen in the 0.15-0.28-keV band, which is consistent with self-absorption by about 10 to the 21st power per sq cm of matter having a cosmic abundance. The power-law models are motivated by the idea that radiation losses regulate the accretion of matter onto M87 and can account for the observed difference in the size of the X-ray source as seen in the present measurements and at higher energies.

  6. Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface

    NASA Astrophysics Data System (ADS)

    Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B.

    2011-06-01

    Energy band alignments between CdS and Cu2ZnSn(SxSe1-x)4 (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

  7. Hearing gain with a BAHA test-band in patients with single-sided deafness.

    PubMed

    Kim, Do-Youn; Kim, Tae Su; Shim, Byoung Soo; Jin, In Suk; Ahn, Joong Ho; Chung, Jong Woo; Yoon, Tae Hyun; Park, Hong Ju

    2014-01-01

    It is assumed that preoperative use of a bone-anchored hearing aid (BAHA) test-band will give a patient lower gain compared to real post-operative gain because of the reduction of energy through the scalp when using a test-band. Hearing gains using a BAHA test-band were analyzed in patients with unilateral hearing loss. Nineteen patients with unilateral sensorineural hearing loss were enrolled. A test-band, which was connected to BAHA Intenso with full-on gain, was put on the mastoid. Conventional air-conduction (AC) pure-tone averages (PTAs) and sound-field PTAs and speech reception thresholds (SRTs) were obtained in conditions A (the better ear naked), B (the better ear plugged), and C (the better ear plugged with a test-band on the poorer mastoid). Air-conduction PTAs of the poorer and better ears were 91 ± 19 and 18 ± 8 dB HL. Sound-field PTAs in condition B were higher than those in condition A (54 vs. 26 dB HL), which means that earplugs can block the sound grossly up to 54 dB HL through the better ears. The aided PTAs (24 ± 6 dB HL) in condition C were similar to those of the better ears in condition A (26±9 dB HL), though condition C showed higher thresholds at 500 Hz and lower thresholds at 1 and 2kHz when compared to condition A. The hearing thresholds using a test-band were similar to the published results of BAHA users with the volume to most comfortable level (MCL). Our findings showed that a BAHA test-band on the poorer ear could transmit sound to the cochlea as much as the better ears can hear. The increased functional gain at 1 and 2kHz reflects the technical characteristics of BAHA processor. The reduction of energy through the scalp when using a test-band seems to be offset by the difference of output by setting the volume to full-on gain and using a high-powered speech processor. Preoperative hearing gains using a test-band with full-on gain seems to be similar to the post-operative gains of BAHA users with the volume to MCL. © 2013.

  8. Topological Classification of Crystalline Insulators through Band Structure Combinatorics

    NASA Astrophysics Data System (ADS)

    Kruthoff, Jorrit; de Boer, Jan; van Wezel, Jasper; Kane, Charles L.; Slager, Robert-Jan

    2017-10-01

    We present a method for efficiently enumerating all allowed, topologically distinct, electronic band structures within a given crystal structure in all physically relevant dimensions. The algorithm applies to crystals without time-reversal, particle-hole, chiral, or any other anticommuting or anti-unitary symmetries. The results presented match the mathematical structure underlying the topological classification of these crystals in terms of K -theory and therefore elucidate this abstract mathematical framework from a simple combinatorial perspective. Using a straightforward counting procedure, we classify all allowed topological phases of spinless particles in crystals in class A . Employing this classification, we study transitions between topological phases within class A that are driven by band inversions at high-symmetry points in the first Brillouin zone. This enables us to list all possible types of phase transitions within a given crystal structure and to identify whether or not they give rise to intermediate Weyl semimetallic phases.

  9. Electronic Structures of Purple Bronze KMo6O17 Studied by X-Ray Photoemission Spectra

    NASA Astrophysics Data System (ADS)

    Qin, Xiaokui; Wei, Junyin; Shi, Jing; Tian, Mingliang; Chen, Hong; Tian, Decheng

    X-ray photoemission spectroscopy study has been performed for the purple bronze KMo6O17. The structures of conduction band and valence band are analogous to the results of ultraviolet photoemission spectra and are also consistent with the model of Travaglini et al., but the gap between conduction and valence band is insignificant. The shape of asymmetric and broadening line of O-1s is due to unresolved contributions from the many inequivalent oxygen sites in this crystal structure. Mo 3d core-level spectrum reveals that there are two kinds of valence states of Molybdenum (Mo+5 and Mo+6). The calculated average valence state is about +5.6, which is consistent with the expectation value from the composition of this material. The tail of Mo-3d spectrum toward higher binding energy is the consequence of the excitation of electron-hole pairs with singularity index of 0.21.

  10. Studies of Nano-structured Se77Sb23- x Ge x Thin Films Prepared by Physical Vapor Condensation Technique

    NASA Astrophysics Data System (ADS)

    Alvi, M. A.

    2017-02-01

    Bulk Se77Sb23- x Ge x material with x = 4 and 12 was prepared by employing a melt quench technique. Its amorphous as well as glassy nature was confirmed by x-ray diffraction analysis and nonisothermal differential scanning calorimetry measurements. The physical vapor condensation technique was applied to prepare nanostructured thin films of Se77Sb23- x Ge x material. The surface morphology of the films was examined using field-emission scanning electron microscopy, revealing average particle size between 20 nm and 50 nm. Systematic investigation of optical absorption data indicated that the optical transition was indirect in nature. The dark conductivity (dc conductivity) of nano-structured Se77Sb23- x Ge x thin films was also investigated at temperatures from 313 K to 463 K, revealing that it tended to increase with increasing temperature. Analyses of our experimental data also indicate that the conduction is due to thermally supported tunneling of charge carriers in confined states close to the band edges. The calculated values of activation energy agree well with the optical bandgap.

  11. Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Greene-Diniz, Gabriel; Greer, J. C.; Fischetti, M. V.

    2016-02-07

    Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energymore » with respect to the conduction-band minimum at the Γ-point.« less

  12. Band structure and phonon properties of lithium fluoride at high pressure

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Panchal, J. M., E-mail: amitjignesh@yahoo.co.in; Department of Physics, University School of Sciences, Gujarat University, Ahmedabad 380009, Gujarat; Joshi, Mitesh

    2016-05-23

    High pressure structural and electronic properties of Lithium Fluoride (LiF) have been studied by employing an ab-initio pseudopotential method and a linear response scheme within the density functional theory (DFT) in conjunction with quasi harmonic Debye model. The band structure and electronic density of states conforms that the LiF is stable and is having insulator behavior at ambient as well as at high pressure up to 1 Mbar. Conclusions based on Band structure, phonon dispersion and phonon density of states are outlined.

  13. Factorial Structure of the Movement Assessment Battery for Children Test-Second Edition in Preschool Children.

    PubMed

    Psotta, Rudolf; Brom, Ondřej

    2016-12-01

    The Movement Assessment Battery for Children-Second Edition is one of the most frequently used tests for assessment of the fundamental motor skills in children. However, there is the question which sensorimotor functions are really captured by the tasks involved in the test for the preschool (3-6 years) children (age band 1). The aim of the study was to examine the factorial structure of the age band 1 test. Results of the testing by the age band 1 in a sample of three- to- six-year-old children (N = 399; 202 boys, 197 girls) were put to confirmatory factor analysis. The results of the study proved the three-specific factor structure of the age band 1. Thus, within the assessment of a child's overall motor proficiency, the motor competence profile including manual dexterity, aiming and catching, and balance abilities can be identified in three- to six-year-old children. © The Author(s) 2016.

  14. Structural and diagenetic evolution of deformation bands in contractional and extensional tectonic regimes

    NASA Astrophysics Data System (ADS)

    Eichhubl, P.; O'Brien, C. M.; Elliott, S. J.

    2016-12-01

    Mechanisms of brittle deformation of sediments and sedimentary rock change with burial because of increasing confining stress, change in pore fluid chemical and temperature conditions, and diagenetic state. In the field, these changes are observed in a transition from early non-cataclastic to later cataclastic deformation bands and to joint-based structures. Jurassic eolian sandstones in the San Rafael monocline and adjacent San Rafael Desert region, Utah, allow comparison of deformation band structures and their diagenetic attributes in contractional and extensional tectonic settings in close proximity. In the Entrada and Navajo Sandstones, we observe up to six generations of deformation bands, with earliest non-cataclastic bands having diffuse boundaries to host rock, and short and irregular traces. Later bands are cataclastic, more sharply defined, with long and straight traces. Cataclastic bands in the San Rafael monocline are interpreted to form as reverse faults during progressive rotation of the steeply dipping fold limb, resulting in an array of bands of varying dip. Bands in the San Rafael Desert form as normal faults with a narrower dip range. Although structural characteristics of bands differ in extensional and contractional tectonic regimes, cataclastic bands in either regime have comparable amount of porosity loss and quartz cementation indicating that tectonic regime does not influence band diagenesis. Abundance of quartz cement in bands, determined by point counting of SEM images, increases from earlier to later generations of bands and, within a single generation, with increasing slip along the band, reaching up to 24% of band volume. This trend is attributed to an increase in cataclasis with increasing host rock cementation and confining stress during burial, and, within the same generation, with increasing slip. Porosity loss by cementation tends to dominate over porosity loss by mechanical compaction. These findings demonstrate that quartz

  15. Band alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Yan, Baojun; Liu, Shulin; Yang, Yuzhen; Heng, Yuekun

    2016-05-01

    Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn0.8Al0.2O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn0.8Al0.2O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔEV) and conduction band offset (ΔEC) for the interface of the MgO/Zn0.8Al0.2O heterostructure have been constructed. An accurate value of ΔEV = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn0.8Al0.2O, a type-II heterojunction with a ΔEC of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

  16. Electronic structures of GaAs/AlxGa1-xAs quantum double rings

    PubMed Central

    Xia, Jian-Bai

    2006-01-01

    In the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and AlxGa1-xAs and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

  17. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

    NASA Astrophysics Data System (ADS)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-04-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  18. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In 2 O 3 nanowires

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of highmore » resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.« less

  19. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires.

    PubMed

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P; Schaller, Richard D; Gosztola, David J; Stroscio, Michael A; Dutta, Mitra

    2018-04-27

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In 2 O 3 ) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In 2 O 3 nanostructure based device characteristics for potential optoelectronic applications. In 2 O 3 nanowires with cubic crystal structure (c-In 2 O 3 ) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy [Formula: see text] defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of [Formula: see text] defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  20. Multipactor Physics, Acceleration, and Breakdown in Dielectric-Loaded Accelerating Structures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fischer, Richard P.; Gold, Steven H.

    2016-07-01

    The objective of this 3-year program is to study the physics issues associated with rf acceleration in dielectric-loaded accelerating (DLA) structures, with a focus on the key issue of multipactor loading, which has been found to cause very significant rf power loss in DLA structures whenever the rf pulsewidth exceeds the multipactor risetime (~10 ns). The experiments are carried out in the X-band magnicon laboratory at the Naval Research Laboratory (NRL) in collaboration with Argonne National Laboratory (ANL) and Euclid Techlabs LLC, who develop the test structures with support from the DoE SBIR program. There are two main elements inmore » the research program: (1) high-power tests of DLA structures using the magnicon output (20 MW @11.4 GHz), and (2) tests of electron acceleration in DLA structures using relativistic electrons from a compact X-band accelerator. The work during this period has focused on a study of the use of an axial magnetic field to suppress multipactor in DLA structures, with several new high power tests carried out at NRL, and on preparation of the accelerator for the electron acceleration experiments.« less

  1. Real-Time Atmospheric Phase Fluctuation Correction Using a Phased Array of Widely Separated Antennas: X-Band Results and Ka-Band Progress

    NASA Astrophysics Data System (ADS)

    Geldzahler, B.; Birr, R.; Brown, R.; Grant, K.; Hoblitzell, R.; Miller, M.; Woods, G.; Argueta, A.; Ciminera, M.; Cornish, T.; D'Addario, L.; Davarian, F.; Kocz, J.; Lee, D.; Morabito, D.; Tsao, P.; Jakeman-Flores, H.; Ott, M.; Soloff, J.; Denn, G.; Church, K.; Deffenbaugh, P.

    2016-09-01

    NASA is pursuing a demonstration of coherent uplink arraying at 7.145-7.190 GHz (X-band) and 30-31 GHz (Kaband) using three 12m diameter COTS antennas separated by 60m at the Kennedy Space Center in Florida. In addition, we have used up to three 34m antennas separated by 250m at the Goldstone Deep Space Communication Complex in California at X-band 7.1 GHz incorporating real-time correction for tropospheric phase fluctuations. Such a demonstration can enable NASA to design and establish a high power, high resolution, 24/7 availability radar system for (a) tracking and characterizing observations of Near Earth Objects (NEOs), (b) tracking, characterizing and determining the statistics of small-scale (≤10cm) orbital debris, (c) incorporating the capability into its space communication and navigation tracking stations for emergency spacecraft commanding in the Ka band era which NASA is entering, and (d) fielding capabilities of interest to other US government agencies. We present herein the results of our phased array uplink combining at near 7.17 and 8.3 GHz using widely separated antennas demonstrations at both locales, the results of a study to upgrade from a communication to a radar system, and our vision for going forward in implementing a high performance, low lifecycle cost multi-element radar array.

  2. A coupler for parasitic mode diagnosis in an X-band triaxial klystron amplifier

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Ju, Jin-chuan; Zhang, Jun; Qi, Zu-min; Zhong, Hui-huang

    2017-10-01

    The traditional methods of parasitic mode excitation diagnosis in an X-band triaxial klystron amplifier (TKA) meet two difficulties: limited installation space and vacuum sealing. In order to solve these issues, a simple and compact coupler with good sealing performance, which can prevent air flow between the main and the auxiliary waveguides, is proposed and investigated experimentally. The coupler is designed with the aperture diffraction theory and the finite-different time-domain (FDTD) method. The designed coupler consists of a main coaxial waveguide (for microwave transmission) and a rectangular auxiliary waveguide (for parasitic mode diagnosis). The entire coupler structure has been fabricated by macromolecule polymer which is transparent to microwave signal in frequency range of X-band. The metal coating of about 200 microns has been performed through electroplating technique to ensure that the device operates well at high power. A small aperture is made in the metal coating. Hence, microwave can couple through the hole and the wave-transparent medium, whereas air flow is blocked by the wave-transparent medium. The coupling coefficient is analyzed and simulated with CST software. The coupler model is also included in particle-in-cell (PIC) simulation with CHIPIC software and the associated parasitic mode excitation is studied. A frequency component of 11.46 GHz is observed in the FFT of the electric field of the drift tube and its corresponding competition mode appears as TE61 mode according to the electric field distribution. Besides, a frequency component of 10.8 GHz is also observed in the FFT of the electric field. After optimization of TE61 mode suppression, an experiment of the TKA with the designed coupler is carried out and the parasitic mode excitation at 10.8 GHz is observed through the designed coupler.

  3. Investigation of an X-band gigawatt long pulse multi-beam relativistic klystron amplifier

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Zhenbang; Huang, Hua; Lei, Lurong

    2015-09-15

    To achieve a gigawatt-level long pulse radiation power in X-band, a multi-beam relativistic klystron amplifier is proposed and studied experimentally. By introducing 18 electron drift tubes and extended interaction cavities, the power capacity of the device is increased. A radiation power of 1.23 GW with efficiency of 41% and amplifier gain of 46 dB is obtained in the particle-in-cell simulation. Under conditions of a 10 Hz repeat frequency and an input RF power of 30 kW, a radiation power of 0.9 GW, frequency of 9.405 GHz, pulse duration of 105 ns, and efficiency of 30% is generated in the experiment, and the amplifier gain is aboutmore » 45 dB. Both the simulation and the experiment prove that the multi-beam relativistic klystron amplifier can generate a long pulse GW-level radiation power in X-band.« less

  4. Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

    NASA Astrophysics Data System (ADS)

    Pletikosić, I.; von Rohr, F.; Pervan, P.; Das, P. K.; Vobornik, I.; Cava, R. J.; Valla, T.

    2018-04-01

    The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.

  5. Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

    DOE PAGES

    Pletikosic, Ivo; von Rohr, F.; Pervan, P.; ...

    2018-04-10

    Here, the success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.

  6. Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pletikosic, Ivo; von Rohr, F.; Pervan, P.

    Here, the success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.

  7. Structural, ferroelectric and magnetic study of lead free (Na{sub 0.5}Bi{sub 0.5}){sub 1-x}La{sub x}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} (x=0,0.01,0.03,0.05) ceramic

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Parmar, Kusum, E-mail: prmrkusum@gmail.com; Sharma, Anshu; Sharma, Hakikat

    2015-05-15

    Lead free (Na{sub 0.5}Bi{sub 0.5}){sub 1-x}La{sub x}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} ceramic having compositions (x=0, 0.01, 0.03, 0.05) has been prepared by sol gel method using citric acid. Structural analysis has been done by X-ray diffraction and FTIR measurements. XRD patterns have been confirmed perovskite structure for all samples. FTIR absorption band at around ∼630 cm{sup −1} is observed for all samples which confirm perovskite phase formation in samples. With increasing La concentration, shifting in XRD peaks and FTIR absorption bands is observed which suggests incorporation of La on A-site in prepared (Na{sub 0.5}Bi{sub 0.5}){sub 1-x}La{sub x}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} samples. Effectmore » of La substitution on Ferroelectric (Polarization vs. Electric field) and Magnetic (Magnetization vs. Magnetic field) properties have been studied at room temperature. All samples exhibit weak ferromagnetic order and also possess ferroelectric behavior which provides new insight to lead free single phase multiferroic materials.« less

  8. Experimental observation of incoherent-coherent crossover and orbital-dependent band renormalization in iron chalcogenide superconductors

    DOE PAGES

    Liu, Z. K.; Yi, M.; Zhang, Y.; ...

    2015-12-22

    The level of electronic correlation has been one of the key questions in understanding the nature of superconductivity. Among the iron-based superconductors, the iron chalcogenide family exhibits the strongest electron correlations. To gauge the correlation strength, we performed a systematic angle-resolved photoemission spectroscopy study on the iron chalcogenide series Fe 1+ySe xTe 1-x (0 < x < 0.59), a model system with the simplest structure. Our measurement reveals an incoherent-to-coherent crossover in the electronic structure as the selenium ratio increases and the system evolves from a weakly localized to a more itinerant state. Furthermore, we found that the effective massmore » of bands dominated by the d xy orbital character significantly decreases with increasing selenium ratio, as compared to the d xz/d yz orbital-dominated bands. The orbital-dependent change in the correlation level agrees with theoretical calculations on the band structure renormalization, and may help to understand the onset of superconductivity in Fe 1+ySe xTe 1-x.« less

  9. Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3

    PubMed Central

    Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; Van Overmeere, Quentin; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Maran, Ronald; Anazawa, Toshihisa; Valanoor, Nagarajan; Imanaka, Yoshihiko

    2017-01-01

    The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomic resolution. The VB electronic structure is strain state dependent in a manner that correlated with a directional change in Sn-O bond lengths with strain. However, VB offsets are found not to vary significantly with strain, which resulted in ascribing most of the difference in band alignment, due to a change in the band gaps with strain, to the conduction band edge. Our results reveal significant strain tuning of conduction band offsets using epitaxial buffer layers, with strain-induced offset differences as large as 0.6 eV possible for SrSnO3. Such large conduction band offset tunability through elastic strain control may provide a pathway to minimize the loss of charge confinement in 2-dimensional electron gases and enhance the performance of photoelectrochemical stannate-based devices. PMID:28195149

  10. Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.

    PubMed

    Knutson, Jeremy L; Martin, James D; Mitzi, David B

    2005-06-27

    Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.

  11. Growth and Properties of MERCURY(1-X) Cadmium (x) Tellurium Alloys and Quantum Well Structures

    NASA Astrophysics Data System (ADS)

    Han, Jeong-Whan

    1990-01-01

    Photoassisted molecular beam epitaxy was employed to grow Hg-based films, which include Hg_{1-x}Cd_{x}Te alloys, modulation-doped HgCdTe, modulation-doped HgCdTe quantum well structures and HgCdTe heterostructures. The structural, electrical and optical properties of these films were studied. A series of Hg_{1 -x}Cd_{x}Te films were deposited on lattice-matched (111)B CdZnTe substrates. The rm Hg_{1-x}Cd_{x}Te films grown under the optimum growth conditions exhibited both high structural perfections and outstanding electrical properties, which can be attributed to the role played by the photons in the growth process. For the first time, conducting p-type and n-type modulation-doped HgCdTe were successfully prepared using arsenic and indium as the p-type and n-type dopants, respectively. Most of them exhibited both excellent structural qualities and very sharp interfaces. The hole concentrations of p-type samples showed no evidence of carrier freeze-out at low temperatures. The electron concentrations of n-type samples also exhibited temperature independence up to 300K. PL measurements exhibited two peaks due to the subband transitions. Many of the modulation-doped HgCdTe superlattices samples exhibited very bright and narrow PL peaks at 4.2K. Both electron and hole mobilities of modulation-doped HgCdTe superlattices increase monotonically with decreasing temperature. The electrical properties of n-type modulation-doped HgCdTe heterostructures having spacer layers were also studied. A series of p-type HgTe-Hg_ {0.15}Cd_{0.85}Te superlattices were grown on (100) CdTe substrates by MBE for an extensive study of the optical and electrical properties of such structures. The absorption coefficient versus photon energy spectra show consecutive rises and plateaus characteristic of two-dimensional quantum structures. Temperature-dependent free carrier mobilities and densities were obtained from a mixed-conduction analysis of the Hall and resistivity data as a function of

  12. Band bending at ferroelectric surfaces and interfaces investigated by x-ray photoelectron spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Apostol, Nicoleta Georgiana, E-mail: nicoleta.apostol@infim.ro

    2014-11-24

    This work reports on the use of X-ray photoelectron spectroscopy to quantify band bending at ferroelectric free surfaces and at their interfaces with metals. Surfaces exhibiting out-of-plane ferroelectric polarization are characterized by a band bending, due to the formation of a dipole layer at the surface, composed by the uncompensated polarization charges (due to ionic displacement) and to the depolarization charge sheet of opposite sign, composed by mobile charge carriers, which migrate near surface, owing to the depolarization electric field. To this surface band bending due to out-of-plane polarization states, metal-semiconductor Schottky barriers must be considered additionally when ferroelectrics aremore » covered by metal layers. It is found that the net band bending is not always an algebraic sum of the two effects discussed above, since sometimes the metal is able to provide additional charge carriers, which are able to fully compensate the surface charge of the ferroelectric, up to the vanishing of the ferroelectric band bending. The two cases which will be discussed in more detail are Au and Cu deposited by molecular beam epitaxy on PbZr{sub 0.2}Ti{sub 0.8}O{sub 3}(001) single crystal thin layers, prepared by pulsed laser deposition. Gold forms unconnected nanoparticles, and their effect on the band bending is the apparition of a Schottky band bending additional to the band bending due to the out-of-plane polarization. Copper, starting with a given thickness, forms continuous metal layers connected to the ground of the system, and provide electrons in sufficient quantity to compensate the band bending due to the out-of-plane polarization.« less

  13. Tunable electronic structure in stained two dimensional van der Waals g-C2N/XSe2 (X = Mo, W) heterostructures

    NASA Astrophysics Data System (ADS)

    Zheng, Z. D.; Wang, X. C.; Mi, W. B.

    2017-10-01

    The electronic structure of the strained g-C2N/XSe2 (X=Mo, W) van der Waals heterostructures are investigated by first-principles calculations. The g-C2N/MoSe2 heterostructure is an indirect band gap semiconductor at a strain from 0% to 8%, where its band gap is 0.66, 0.61, 0.73, 0.60 and 0.33 eV. At K point, the spin splitting is 186, 181, 39, 13 and 9 meV, respectively. For g-C2N/WSe2 heterostructures, the band gap is 0.32, 0.37, 0.42, 0.45 and 0.36 eV, and the conduction band minimum is shifted from Г-M region to K-Г region as the strain increases from 0% to 8%. Its spin splitting monotonically decreases as a strain raises to 8%, which is 445, 424, 261, 111 and 96 meV, respectively. Moreover, at a strain less than 4%, the conduction band mainly comes from g-C2N, but it comes from XSe2 (X=Mo, W) above 6%. Our results show that the g-C2N/XSe2 heterostructures have tunable electronic structures, which makes it a potential candidate for novel electronic devices.

  14. Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1-x)4 solid solutions

    NASA Astrophysics Data System (ADS)

    Levcenco, S.; Dumcenco, D.; Wang, Y. P.; Huang, Y. S.; Ho, C. H.; Arushanov, E.; Tezlevan, V.; Tiong, K. K.

    2012-06-01

    Single crystals of Cu2ZnSn(SxSe1-x)4 (CZTSSe) solid solutions were grown by chemical vapor transport technique using iodine trichloride as a transport agent. As confirmed by X-ray investigations, the as-grown CZTSSe solid solutions are single phase and crystallized in kesterite structure. The lattice parameters of CZTSSe were determined and the S contents of the obtained crystals were estimated by Vegard's law. The composition dependent band gaps of CZTSSe solid solutions were studied by electrolyte electroreflectance (EER) measurements at room temperature. From a detailed lineshape fit of the EER spectra, the band gaps of CZTSSe were determined accurately and were found to decrease almost linearly with the increase of Se content, which agreed well with the recent theoretical first-principle calculations by S. Chen, A. Walsh, J.H. Yang, X.G. Gong, L. Sun, P. X. Yang, J.H. Chu, S.H. Wei, Phys. Rev. B 83 (2011) 125201 (5pp).

  15. Atmospheric dayglow diagnostics involving the O2(b-X) Atmospheric band emission: Global Oxygen and Temperature (GOAT) mapping

    NASA Astrophysics Data System (ADS)

    Slanger, T. G.; Pejaković, D. A.; Kostko, O.; Matsiev, D.; Kalogerakis, K. S.

    2017-03-01

    The terrestrial dayglow displays prominent emission features from the 0-0 and 1-1 bands of the O2 Atmospheric band system in the 760-780 nm region. We present an analysis of observations in this wavelength region recorded by the Space Shuttle during the Arizona Airglow Experiment. A major conclusion is that the dominant product of O(1D) + O2 energy transfer is O2(b, v = 1), a result that corroborates our previous laboratory studies. Moreover, critical to the interpretation of dayglow is the possible interference by N2 and N2+ bands in the 760-780 nm region, where the single-most important component is the N2 1PG 3-1 band that overlaps with the O2(b-X) 0-0 band. When present, this background must be accounted for to reveal the O2(b-X) 0-0 and 1-1 bands for altitudes at which the O2 and N2/N2+ emissions coincide. Finally, we exploit the very different collisional behavior of the two lowest O2(b) vibrational levels to outline a remote sensing technique that provides information on Atmospheric composition and temperature from space-based observations of the 0-0 and 1-1 O2 atmospheric bands.

  16. Modulators for the S-band test linac at DESY

    NASA Astrophysics Data System (ADS)

    Bieler, M.; Choroba, S.; Hameister, J.; Lewin, H.-Ch.

    1995-07-01

    The development of adequate modulators for high peak power klystrons is one of the focus points for linear collider R&D programs. For the DESY/THD S-band linear collider study 150 MW rf-pulse power at 50 Hz repetition rate and 3 μs pulse duration is required [1]. Two different modulator schemes are under investigation. One is the conventional line type pulser, using a pulse forming network and a step up transformer, the other one is a hard tube pulser, using a dc power source at the full klystron voltage and a switch tube. This paper is focused on the modulator development for the S-band Test Linac at DESY. After a short overview over the test linac and a brief description of the 150 MW S-band klystron the circuitry of the line type pulse (LTP) is given. A hard tube pulser (HTP), which switches the high voltage directly from a storage capacitor to the klystron, has been built up at DESY. Circuitry and the results of the commissioning of the switch tube are reported.

  17. Evolutionary Design of an X-Band Antenna for NASA's Space Technology 5 Mission

    NASA Technical Reports Server (NTRS)

    Lohn, Jason D.; Hornby, Gregory S.; Rodriguez-Arroyo, Adan; Linden, Derek S.; Kraus, William F.; Seufert, Stephen E.

    2003-01-01

    We present an evolved X-band antenna design and flight prototype currently on schedule to be deployed on NASA s Space Technology 5 spacecraft in 2004. The mission consists of three small satellites that wall take science measurements in Earth s magnetosphere. The antenna was evolved to meet a challenging set of mission requirements, most notably the combination of wide beamwidth for a circularly-polarized wave and wide bandwidth. Two genetic algorithms were used: one allowed branching an the antenna arms and the other did not. The highest performance antennas from both algorithms were fabricated and tested. A handdesigned antenna was produced by the contractor responsible for the design and build of the mission antennas. The hand-designed antenna is a quadrifilar helix, and we present performance data for comparison to the evolved antennas. As of this writing, one of our evolved antenna prototypes is undergoing flight qualification testing. If successful, the resulting antenna would represent the first evolved hardware in space, and the first deployed evolved antenna.

  18. Structural, vibrational and luminescence properties of the (1−x)CaWO{sub 4}−xCdWO{sub 4} system

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Taoufyq, A.; Laboratoire Matériaux et Environnement LME, Faculté des Sciences, Université Ibn Zohr, BP 8106, Cité Dakhla, Agadir, Maroc; CEA/DEN, Département d’Études des Réacteurs, Laboratoire Dosimétrie Capteurs Instrumentation, CEA Cadarache, 13108, Saint-Paul-lez-Durance

    2014-11-15

    In the present work, we investigate the structural, microstructural, vibrational and luminescence properties of the system (1−x)CaWO{sub 4}−xCdWO{sub 4} with x ranging between 0 and 1. Polycrystalline samples were elaborated using a coprecipitation technique followed by thermal treatment at 1000 °C. The samples were then characterized using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and luminescence analyses. X-ray diffraction profile analyses using Rietveld method showed that two kinds of solid solutions Ca{sub 1−x}Cd{sub x}WO{sub 4} having scheelite and wolframite structures, with respectively tetragonal and monoclinic crystal cells, were observed, with a biphasic system for compositions x=0.6 and 0.7. The scanningmore » electron microscopy experiments showed a complex evolution of morphologies and crystallite sizes as x increased. The vibration modes of Raman spectra were characteristic of composition-dependent disordered solid solutions with decreasing wavenumbers as x increased. Luminescence experiments were performed under UV-laser light irradiation. The energies of emission bands increased linearly with cadmium composition x. The integrated intensity of luminescence reached a maximum value for the substituted wolframite phase with composition x=0.8. - Graphical abstract: Luminescence on UV excitation (364.5 nm) of (1−x)CaWO{sub 4−x}CdWO{sub 4} system, elaborated from coprecipitation technique at 1000 °C, with 0« less

  19. Electronic band structures and excitonic properties of delafossites: A GW-BSE study

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoming; Meng, Weiwei; Yan, Yanfa

    2017-08-01

    We report the band structures and excitonic properties of delafossites CuMO2 (M=Al, Ga, In, Sc, Y, Cr) calculated using the state-of-the-art GW-BSE approach. We evaluate different levels of self-consistency of the GW approximations, namely G0W0, GW0, GW, and QSGW, on the band structures and find that GW0, in general, predicts the band gaps in better agreement with experiments considering the electron-hole effect. For CuCrO2, the HSE wave function is used as the starting point for the perturbative GW0 calculations, since it corrects the band orders wrongly predicted by PBE. The discrepancy about the valence band characters of CuCrO2 is classified based on both HSE and QSGW calculations. The PBE wave functions, already good, are used for other delafossites. All the delafossites are shown to be indirect band gap semiconductors with large exciton binding energies, varying from 0.24 to 0.44 eV, in consistent with experimental findings. The excitation mechanisms are explained by examining the exciton amplitude projections on the band structures. Discrepancies compared with experiments are also addressed. The lowest and strongest exciton, mainly contributed from either Cu 3d → Cu 3p (Al, Ga, In) or Cu 3d → M 3d (M = Sc, Y, Cr) transitions, is always located at the L point of the rhombohedral Brillouin zone.

  20. First principles study on structural, electronic and optical properties of Ga1-xBxP ternary alloys (x = 0, 0.25, 0.5, 0.75 and 1)

    NASA Astrophysics Data System (ADS)

    Hoat, D. M.; Rivas Silva, J. F.; Méndez Blas, A.

    2018-07-01

    The structural, electronic and optical properties of GaP, BP binary compounds and their ternary alloys Ga1-xBxP (x = 0.25, 0.5 and 0.75) have been studied by full-potential linearized augmented plane wave (FP-LAPW) method within the framework of density functional theory (DFT) as implemented in WIEN2k package. Local density approximation (LDA) and generalized gradient approximation (GGA) as proposed by Perdew-Burke-Ernzerhof (PBE), Wu-Cohen (WC) and PBE for solid (PBESol) were used for treatment of exchange-correlation effect in calculations. Additionally, the Tran-Blaha modified Becke-Johnson (mBJ) potential was also employed for electronic and optical calculations due to that it gives very accurate band gap of solids. As B concentration increases, the lattice constant reduces and the energy band gap firstly decreases for small composition x and then it shows increasing trend until pure BP. Our results show that the indirect-direct band gap transition can be reached from x = 0.33. The linear optical properties, such as reflectivity, absorption coefficient, refractive index and optical conductivity of binary compounds and ternary alloys were derived from their calculated complex dielectric function in wide energy range up to 30 eV, and the alloying effect on these properties was also analyzed in detail.

  1. X-ray photoemission study of NiS2-xSex (x=0.0 1.2)

    NASA Astrophysics Data System (ADS)

    Krishnakumar, S. R.; Sarma, D. D.

    2003-10-01

    Electronic structure of NiS2-xSex system has been investigated for various compositions (x) using x-ray photoemission spectroscopy. An analysis of the core-level as well as the valence-band spectra of NiS2 in conjunction with many-body cluster calculations provides a quantitative description of the electronic structure of this compound. With increasing Se content, the on-site Coulomb correlation strength (U) does not change, while the bandwidth W of the system increases, driving the system from a covalent insulating state to a pd-metallic state.

  2. Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects.

    PubMed

    Luo, Jun-Wei; Franceschetti, Alberto; Zunger, Alex

    2008-10-01

    Direct carrier multiplication (DCM) occurs when a highly excited electron-hole pair decays by transferring its excess energy to the electrons rather than to the lattice, possibly exciting additional electron-hole pairs. Atomistic electronic structure calculations have shown that DCM can be induced by electron-hole Coulomb interactions, in an impact-ionization-like process whose rate is proportional to the density of biexciton states rho XX. Here we introduce a DCM "figure of merit" R2(E) which is proportional to the ratio between the biexciton density of states rhoXX and the single-exciton density of states rhoX, restricted to single-exciton and biexciton states that are coupled by Coulomb interactions. Using R2(E), we consider GaAs, InAs, InP, GaSb, InSb, CdSe, Ge, Si, and PbSe nanocrystals of different sizes. Although DCM can be affected by both quantum-confinement effects (reflecting the underly electronic structure of the confined dot-interior states) and surface effects, here we are interested to isolate the former. To this end the nanocrystal energy levels are obtained from the corresponding bulk band structure via the truncated crystal approximation. We find that PbSe, Si, GaAs, CdSe, and InP nanocrystals have larger DCM figure of merit than the other nanocrystals. Our calculations suggest that high DCM efficiency requires high degeneracy of the corresponding bulk band-edge states. Interestingly, by considering band structure effects we find that as the dot size increases the DCM critical energy E0 (the energy at which R2(E) becomes >or=1) is reduced, suggesting improved DCM. However, whether the normalized E0/epsilong increases or decreases as the dot size increases depends on dot material.

  3. Analysis of X-band radar images for the detection of the reflected and diffracted waves in coastal zones

    NASA Astrophysics Data System (ADS)

    Ludeno, Giovanni; Natale, Antonio; Soldovieri, Francesco; Vicinanza, Diego; Serafino, Francesco

    2014-05-01

    The observation of nearshore waves and the knowledge of the sea state parameters can play a crucial role for the safety of harbors and ocean engineering. In the last two decades, different algorithms for the estimation of sea state parameters, surface currents and bathymetry from X-band radar data have been developed and validated [1, 2]. The retrieval of ocean wave parameters such as significant height, period, direction and wavelength of the dominant wave is based on the spectral analysis of data sequences collected by nautical X-band radars [3]. In particular, the reconstruction of the wave motion is carried out through the inversion procedure explained in [1-3], which exploits the dispersion relationship to define a band pass filter used to separate the energy associated with the ocean waves from the background noise. It is worth to note that the shape of such a band pass filter depends upon the value of both the surface currents and bathymetry; in our reconstruction algorithm these parameters are estimated through the (Normalized Scalar Product) procedure [1], which outperforms other existing methods (e.g., the Least Squares) [4]. From the reconstructed wave elevation sequences we can get the directional spectrum that provides useful information (i.e., wavelength, period, direction and amplitude) relevant to the main waves contributing to the wave motion. Of course, in coastal zones a number of diffraction and reflection phenomena can be observed, due to sea-waves impinging obstacles as jetties, breakwaters and boats. In the present paper we want to show the capability to detect reflected and diffracted sea-waves offered by the processing of X-band radar data. Further details relevant to the obtained results will be provided in the full paper and at the conference time. References [1] F. Serafino, C. Lugni, F. Soldovieri, "A novel strategy for the surface current determination from marine X-Band radar data", IEEE Geosci. and Remote Sensing Letters, vol. 7, no

  4. Optical absorption spectra and energy band gap in manganese containing sodium zinc phosphate glasses

    NASA Astrophysics Data System (ADS)

    Sardarpasha, K. R.; Hanumantharaju, N.; Gowda, V. C. Veeranna

    2018-05-01

    Optical band gap energy in the system 25Na2O-(75-x)[0.6P2O5-0.4ZnO]-xMnO2 (where x = 0.5,1,5,10 and 20 mol.%) have been studied. The intensity of the absorption band found to increase with increase of MnO2 content. The decrease in the optical band gap energy with increase in MnO2 content in the investigated glasses is attributed to shifting of absorption edge to a longer wavelength region. The obtained results were discussed in view of the structure of phosphate glass network.

  5. Effect of Ni doping on structural and optical properties of Zn{sub 1−x}Ni{sub x}O nanopowder synthesized via low cost sono-chemical method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Singh, Budhendra, E-mail: bksingh@ua.pt; Kaushal, Ajay, E-mail: ajay.kaushal@ua.pt; Bdikin, Igor

    2015-10-15

    Highlights: • Pure and Ni doped ZnO nanopowders were synthesized by low cost sonochemical method. • The optical properties of Zn{sub 1−x}Ni{sub x}O nanopowders can be tuned by varying Ni content. • The results reveal the solubility limit of Ni into ZnO matrix as below 8%. - Abstract: Zn{sub 1−x}Ni{sub x}O nanopowders with different Ni contents of x = 0.0, 0.04 and 0.08 were synthesized via cost effective sonochemical reaction method. X-ray diffraction (XRD) pattern reveals pure wurtzite phase of prepared nanostructures with no additional impurity peaks. The morphology and dimensions of nanoparticles were investigated using scanning electron microscope (SEM).more » A sharp and strong peak for first order optical mode for wurtzite zinc oxide (ZnO) structure was observed at ∼438 cm{sup −1} in Raman spectra. The calculated optical band gap (E{sub g}) from UV–vis transmission data was found to decrease with increase in Ni content. The observed red shift in E{sub g} with increasing Ni content in ZnO nanopowders were in agreement with band gap behaviours found in their photoluminescence (PL) spectra. The synthesised ZnO nanopowders with controlled band gap on Ni doping reveals their potential for use in various electronic and optical device applications. The results were discussed in detail.« less

  6. Band structures in two-dimensional phononic crystals with periodic Jerusalem cross slot

    NASA Astrophysics Data System (ADS)

    Li, Yinggang; Chen, Tianning; Wang, Xiaopeng; Yu, Kunpeng; Song, Ruifang

    2015-01-01

    In this paper, a novel two-dimensional phononic crystal composed of periodic Jerusalem cross slot in air matrix with a square lattice is presented. The dispersion relations and the transmission coefficient spectra are calculated by using the finite element method based on the Bloch theorem. The formation mechanisms of the band gaps are analyzed based on the acoustic mode analysis. Numerical results show that the proposed phononic crystal structure can yield large band gaps in the low-frequency range. The formation mechanism of opening the acoustic band gaps is mainly attributed to the resonance modes of the cavities inside the Jerusalem cross slot structure. Furthermore, the effects of the geometrical parameters on the band gaps are further explored numerically. Results show that the band gaps can be modulated in an extremely large frequency range by the geometry parameters such as the slot length and width. These properties of acoustic waves in the proposed phononic crystals can potentially be applied to optimize band gaps and generate low-frequency filters and waveguides.

  7. Electromodulation spectroscopy of direct optical transitions in Ge{sub 1−x}Sn{sub x} layers under hydrostatic pressure and built-in strain

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dybała, F.; Żelazna, K.; Maczko, H.

    Unstrained Ge{sub 1−x}Sn{sub x} layers of various Sn concentration (1.5%, 3%, 6% Sn) and Ge{sub 0.97}Sn{sub 0.03} layers with built-in compressive (ε = −0.5%) and tensile (ε = 0.3%) strain are grown by molecular beam epitaxy and studied by electromodulation spectroscopy (i.e., contactless electroreflectance and photoreflectance (PR)). In order to obtain unstrained GeSn layers and layers with different built-in in-plane strains, virtual InGaAs substrates of different compositions are grown prior to the deposition of GeSn layers. For unstrained Ge{sub 1−x}Sn{sub x} layers, the pressure coefficient for the direct band gap transition is determined from PR measurements at various hydrostatic pressures to be 12.2 ± 0.2 meV/kbar, whichmore » is very close to the pressure coefficient for the direct band gap transition in Ge (12.9 meV/kbar). This suggests that the hydrostatic deformation potentials typical of Ge can be applied to describe the pressure-induced changes in the electronic band structure of Ge{sub 1−x}Sn{sub x} alloys with low Sn concentrations. The same conclusion is derived for the uniaxial deformation potential, which describes the splitting between heavy-hole (HH) and light-hole (LH) bands as well as the strain-related shift of the spin-orbit (SO) split-off band. It is observed that the HH, LH, and SO related transitions shift due to compressive and tensile strain according to the Bir-Pikus theory. The dispersions of HH, LH, and SO bands are calculated for compressive and tensile strained Ge{sub 0.97}Sn{sub 0.03} with the 8-band kp Hamiltonian including strain effects, and the mixing of HH and LH bands is discussed. In addition, the dispersion of the electronic band structure is calculated for unstrained Ge{sub 1−x}Sn{sub x} layers (3% and 6% Sn) at high hydrostatic pressure with the 8-band kp Hamiltonian, and the pressure-induced changes in the electronic band structure are discussed.« less

  8. X ray reflection masks: Manufacturing, characterization and first tests

    NASA Astrophysics Data System (ADS)

    Rahn, Stephen

    1992-09-01

    SXPL (Soft X-ray Projection Lithography) multilayer mirrors are characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors with a 2d in the region of 14 nm were characterized by Cu-k(alpha) grazing incidence as well as soft X-ray normal incidence reflectivity measurements. The multilayer mirrors were patterned by reactive ion etching with CF4 using a photoresist as etch mask, thus producing X-ray reflection masks. The masks were tested at the synchrotron radiation laboratory of the electron accelerator ELSA. A double crystal X-ray monochromator was modified so as to allow about 0.5 sq cm of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto a resist and structure sizes down to 8 micrometers were nicely reproduced. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

  9. Density Functional Theory Calculation of the Band Alignment of (101̅0) In(x)Ga(1-x)N/Water Interfaces.

    PubMed

    Meng, Andrew C; Cheng, Jun; Sprik, Michiel

    2016-03-03

    Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

  10. Nd: YAG laser irradiation effects on structural and magnetic properties of Ni1+xZrxFe2-2xO4 nanoparticles

    NASA Astrophysics Data System (ADS)

    Saraf, Tukaram S.; Kounsalye, Jitendra S.; Birajdar, Shankar D.; Shamkuwar, N. R.

    2018-05-01

    The effect of 112 mJ Nd: YAG laser irradiation on structural, morphological, infrared and magnetic properties of Ni1+xZrxFe2-2xO4 spinel ferrite nanoparticles has been systematically investigated in the present work. The sol-gel auto combustion synthesis method was successfully executed for the synthesis of the present system. All the samples were characterized by X-ray diffraction technique (XRD), scanning electron microscopy (SEM) and infrared spectroscopy (IR) technique. The magnetic properties of the present samples were measured by pulse field hysteresis loop technique. All the properties were measured for laser irradiated samples as well, to understand the effect of irradiation on the properties. The single-phase cubic spinel structure was confirmed by X-ray diffraction patterns of all samples and the disordered structure was observed for irradiated samples. The two principle absorption bands in IR spectra also confirm the formation of the spinel structure. Spherical and agglomerated morphology was observed for Zr4+ substituted nickel ferrite, whereas scratched morphology was observed for the irradiated samples. The grain size confirms the nanocrystalline nature, the crystallite size also evident the same. The magnetic parameters decreased after Zr4+ ion doping and strongly influenced by the irradiation.

  11. Performance of a Ka-band transponder breadboard for deep-space applications

    NASA Technical Reports Server (NTRS)

    Mysoor, N. R.; Lane, J. P.; Kayalar, S.; Kermode, A. W.

    1995-01-01

    This article summarizes the design concepts applied in the development of and advanced Ka-band (34.4 GHz/32 GHz) transponder breadboard for the next generation of space communications systems applications. The selected architecture upgrades the X-band (7.2 GHz/8.4 GHz) deep-space transponder (DST) to provide Da-band up/Ka- and X-band down capability. The Ka-band transponder breadboard incorporates several state-of-the-art components, including sampling mixers, a Ka-band dielectric resonator oscillator, and microwave monolithic integrated circuits (MMICs). The MMICs that were tested in the breadboard include upconverters, downconverters, automatic gain control circuits, mixers, phase modulators, and amplifiers. The measured receiver dynamic range, tracking range, acquisition rate, static phase error, and phase jitter characteristics of the Ka-band breadboard interfaced to the advanced engineering model X-band DST are in good agreement with the expected performance. The results show a receiver tracking threshold of -149 dBm with a dynamic range of 80 dB and a downlink phase jitter of 7 deg rms. The analytical results of phase noise and Allan standard deviation are in good agreement with the experimental results.

  12. Electronic structures of of PuX (X=S, Se, Te)

    NASA Astrophysics Data System (ADS)

    Maehira, Takahiro; Sakai, Eijiro; Tatetsu, Yasutomi

    2013-08-01

    We have calculated the energy band structures and the Fermi surfaces of PuS, PuSe, and PuTe by using a self-consistent relativistic linear augmented-plane-wave method with the exchange and correlation potential in the local density approximation. In general, the energy bands near the Fermi level are mainly caused by the hybridization between the Pu 5 f and the monochalcogenide p electrons. The obtained main Fermi surfaces consisted of two hole sheets and one electron sheet, which were constructed from the band having both the Pu 5 f state and the monochalcogenide p state.

  13. Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications.

    PubMed

    Whittles, Thomas J; Veal, Tim D; Savory, Christopher N; Welch, Adam W; de Souza Lucas, Francisco Willian; Gibbon, James T; Birkett, Max; Potter, Richard J; Scanlon, David O; Zakutayev, Andriy; Dhanak, Vinod R

    2017-12-06

    The earth-abundant material CuSbS 2 (CAS) has shown good optical properties as a photovoltaic solar absorber material, but has seen relatively poor solar cell performance. To investigate the reason for this anomaly, the core levels of the constituent elements, surface contaminants, ionization potential, and valence-band spectra are studied by X-ray photoemission spectroscopy. The ionization potential and electron affinity for this material (4.98 and 3.43 eV) are lower than those for other common absorbers, including CuIn x Ga (1-x) Se 2 (CIGS). Experimentally corroborated density functional theory (DFT) calculations show that the valence band maximum is raised by the lone pair electrons from the antimony cations contributing additional states when compared with indium or gallium cations in CIGS. The resulting conduction band misalignment with CdS is a reason for the poor performance of cells incorporating a CAS/CdS heterojunction, supporting the idea that using a cell design analogous to CIGS is unhelpful. These findings underline the critical importance of considering the electronic structure when selecting cell architectures that optimize open-circuit voltages and cell efficiencies.

  14. Band structure and optical properties of opal photonic crystals

    NASA Astrophysics Data System (ADS)

    Pavarini, E.; Andreani, L. C.; Soci, C.; Galli, M.; Marabelli, F.; Comoretto, D.

    2005-07-01

    A theoretical approach for the interpretation of reflectance spectra of opal photonic crystals with fcc structure and (111) surface orientation is presented. It is based on the calculation of photonic bands and density of states corresponding to a specified angle of incidence in air. The results yield a clear distinction between diffraction in the direction of light propagation by (111) family planes (leading to the formation of a stop band) and diffraction in other directions by higher-order planes (corresponding to the excitation of photonic modes in the crystal). Reflectance measurements on artificial opals made of self-assembled polystyrene spheres are analyzed according to the theoretical scheme and give evidence of diffraction by higher-order crystalline planes in the photonic structure.

  15. Band structures of TiO2 doped with N, C and B*

    PubMed Central

    Xu, Tian-Hua; Song, Chen-Lu; Liu, Yong; Han, Gao-Rong

    2006-01-01

    This study on the band structures and charge densities of nitrogen (N)-, carbon (C)- and boron (B)-doped titanium dioxide (TiO2) by first-principles simulation with the CASTEP code (Segall et al., 2002) showed that the three 2p bands of impurity atom are located above the valence-band maximum and below the Ti 3d bands, and that along with the decreasing of impurity atomic number, the fluctuations become more intensive. We cannot observe obvious band-gap narrowing in our result. Therefore, the cause of absorption in visible light might be the isolated impurity atom 2p states in band-gap rather than the band-gap narrowing. PMID:16532532

  16. Band structure calculations of CuAlO2, CuGaO2, CuInO2, and CuCrO2 by screened exchange

    NASA Astrophysics Data System (ADS)

    Gillen, Roland; Robertson, John

    2011-07-01

    We report density functional theory band structure calculations on the transparent conducting oxides CuAlO2, CuGaO2, CuInO2, and CuCrO2. The use of the hybrid functional screened-exchange local density approximation (sX-LDA) leads to considerably improved electronic properties compared to standard LDA and generalized gradient approximation (GGA) approaches. We show that the resulting electronic band gaps compare well with experimental values and previous quasiparticle calculations, and show the correct trends with respect to the atomic number of the cation (Al, Ga, In). The resulting energetic depths of Cu d and O p levels and the valence-band widths are considerable improvements compared to LDA and GGA and are in good agreement with available x-ray photoelectron spectroscopy data. Lastly, we show the calculated imaginary part of the dielectric function for all four systems.

  17. Surveying the Lunar Surface for New Craters with Mini-RF/Goldstone X-Band Bistatic Observations

    NASA Astrophysics Data System (ADS)

    Cahill, J. T.; Patterson, G.; Turner, F. S.; Morgan, G.; Stickle, A. M.; Speyerer, E. J.; Espiritu, R. C.; Thomson, B. J.

    2017-12-01

    A multi-look temporal imaging survey by Speyerer et al. (2016) using Lunar Reconnaissance Orbiter Camera (LROC) Narrow Angle Camera (NAC) has highlighted detectable and frequent impact bombardment processes actively modifying the lunar surface. Over 220 new resolvable impacts have been detected since NASA's Lunar Reconnaissance Orbiter (LRO) entered orbit around the Moon, at a flux that is substantially higher than anticipated from previous studies (Neukum et al., 2001). The Miniature Radio Frequency (Mini-RF) instrument aboard LRO is a hybrid dual-polarized synthetic aperture radar (SAR) that now operates in concert with the Arecibo Observatory (AO) and the Goldstone deep space communications complex 34-meter antenna DSS-13 to collect S- and X-band (12.6 and 4.2 cm, respectively) bistatic radar data of the Moon, respectively. Here we targeted some of the larger (>30 m) craters identified by Speyerer et al. (2016) and executed bistatic X-band radar observations both to evaluate our ability to detect and resolve these impact features and further characterize the spatial extent and material size of their ejecta outside optical wavelengths. Data acquired during Mini-RF monostatic operations, when the transmitter was active, show no coverage of the regions in question before or after two of the new impacts occurred. This makes Mini-RF and Earth-based bistatic observations all the more valuable for examination of these fresh new geologic features. Preliminary analyses of Arecibo/Greenbank and Mini-RF/Goldstone observations are unable to resolve the new crater cavities (due to our current resolving capability of 100 m/px), but they further confirm lunar surface roughness changes occurred between 2008 and 2017. Mini-RF X-band observations show newly ejected material was dispersed on the order of 100-300 meters from the point of impact. Scattering observed in the X-band data suggests the presence of rocky ejecta 4 - 45 cm in diameter on the surface and buried to depths of

  18. Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2

    NASA Astrophysics Data System (ADS)

    Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

    2014-10-01

    The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x =0-0.06) grown on α-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S | values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in a good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T>TS were constant at low values of 23μVK-1 independently of x, which reflects a metallic electronic structure, whereas those at TxWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.

  19. Structural and optical properties of magnetron sputtered MgxZn1-xO thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K.

    2006-04-01

    MgxZn1-xO (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ~4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.

  20. Creating a Test Validated Structural Dynamic Finite Element Model of the Multi-Utility Technology Test Bed Aircraft

    NASA Technical Reports Server (NTRS)

    Pak, Chan-Gi; Truong, Samson S.

    2014-01-01

    Small modeling errors in the finite element model will eventually induce errors in the structural flexibility and mass, thus propagating into unpredictable errors in the unsteady aerodynamics and the control law design. One of the primary objectives of Multi Utility Technology Test Bed, X-56A, aircraft is the flight demonstration of active flutter suppression, and therefore in this study, the identification of the primary and secondary modes for the structural model tuning based on the flutter analysis of X-56A. The ground vibration test validated structural dynamic finite element model of the X-56A is created in this study. The structural dynamic finite element model of the X-56A is improved using a model tuning tool. In this study, two different weight configurations of the X-56A have been improved in a single optimization run.

  1. Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Wakabayashi, Ryo; Hattori, Mai; Yoshimatsu, Kohei; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

    2018-06-01

    High-quality β-(AlxGa1-x)2O3 (x = 0-0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1-x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band.

  2. Ternary lanthanum sulfide selenides {alpha}-LaS{sub 2-x}Se{sub x} (0<x<2) with mixed dichalcogenide anions X{sub 2}{sup 2-} (X=S, Se)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bartsch, Christian; Doert, Thomas, E-mail: thomas.doert@chemie.tu-dresden.de

    2012-01-15

    Mixed lanthanum sulfide selenides LaS{sub 2-x}Se{sub x} (0<x<2) were obtained by metathesis reactions starting from anhydrous lanthanum chloride and alkali metal polychalcogenides. The LaS{sub 2-x}Se{sub x} compounds crystallize in space group P2{sub 1}/a, no. 14, and adopt the {alpha}-LnS{sub 2} (Ln=Y, La-Lu) structure type with a pronounced site preference for the chalcogen atoms. The mixed chalcogenides form a complete miscible series with lattice parameters a=820-849 pm, b=413-425 pm and c=822-857 pm ({beta} Almost-Equal-To 90 Degree-Sign) following Vegard's rule. Raman signals indicate the presence of mixed X{sub 2}{sup 2-} dianions, a species rarely evidenced in literature, besides the well known anionsmore » S{sub 2}{sup 2-} and Se{sub 2}{sup 2-}. The band gaps of the LaS{sub 2-x}Se{sub x} compounds, determined by optical spectroscopy, decrease nearly linearly with increasing amount of selenium. - Graphical abstract: Raman spectra and site occupancies in the structures of selected lanthanum sulfide selenides. Highlights: Black-Right-Pointing-Pointer Vegard series of mixed lanthanum sulfide selenides LaS{sub 2-x}Se{sub x} (0<x<2). Black-Right-Pointing-Pointer Pronounced site ordering of chalcogen positions. Black-Right-Pointing-Pointer Optical band gaps decrease with Se content. Black-Right-Pointing-Pointer Raman measurements evidence mixed X{sub 2}{sup 2-} dimeric anions.« less

  3. Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy

    NASA Astrophysics Data System (ADS)

    Evans, D. A.; McGlynn, A. G.; Towlson, B. M.; Gunn, M.; Jones, D.; Jenkins, T. E.; Winter, R.; Poolton, N. R. J.

    2008-02-01

    Using synchrotron-based luminescence excitation spectroscopy in the energy range 4-20 eV at 8 K, the indirect Γ-X optical band-gap transition in cubic boron nitride is determined as 6.36 ± 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 ± 0.04 eV. The composition and structure of the materials are self-consistently established by optically detected x-ray absorption spectroscopy, and both x-ray diffraction and Raman measurements on the same samples give independent confirmation of their chemical and structural purity: together, the results are therefore considered as providing definitive measurements of the optical band-gap energies of the two materials.

  4. Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps

    NASA Astrophysics Data System (ADS)

    Hong, Joon Goo

    Aggressive scaling of devices has continued to improve MOSFET transistor performance. As lateral device dimensions continue to decrease, gate oxide thickness must be scaled down. As one of the promising high k alternative gate oxide materials, HfO2 and its silicates were investigated to understand their direct tunneling behavior by studying band offset energies with spectroscopy and electrical characterization. Local bonding change of remote plasma deposited (HfO2)x(SiO 2)1-x alloys were characterized by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) as a function of alloy composition, x. Two different precursors with Hf Nitrato and Hf-tert-butoxide were tested to have amorphous deposition. Film composition was determined off-line by Rutherford backscattering spectroscopy (RBS) and these results were calibrated with on-line AES. As deposited Hf-silicate alloys were characterized by off-line XPS and AES for their chemical shifts interpreting with a partial charge transfer model as well as coordination changes. Sigmoidal dependence of valence band offset energies was observed. Hf 5d* state is fixed at the bottom of the conduction band and located at 1.3 +/- 0.2 eV above the top of the Si conduction band as a conduction band offset by x-ray absorption spectroscopy (XAS). Optical band gap energy changes were observed with vacuum ultra violet spectroscopic ellipsometry (VUVSE) to verify compositional dependence of conduction and valence band offset energy changes. 1 nm EOT normalized tunneling current with Wentzel-Kramer-Brillouin (WKB) simulation based on the band offset study and Franz two band model showed the minimum at the intermediate composition matching with the experimental data. Non-linear trend in tunneling current was observed because the increases in physical thickness were mitigated by reductions in band offset energies and effective mass for tunneling. C-V curves were compared

  5. Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors: Effect of chlorination on the TlBr band edges for radiation detectors

    DOE PAGES

    Varley, J. B.; Conway, A. M.; Voss, L. F.; ...

    2015-02-09

    Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

  6. Band gap and electronic structure of MgSiN2

    NASA Astrophysics Data System (ADS)

    Quirk, J. B.; Râsander, M.; McGilvery, C. M.; Palgrave, R.; Moram, M. A.

    2014-09-01

    Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN2 is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN2 (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN2 is 6.2 eV. MgSiN2 has an additional direct gap of 6.3 eV at the Γ point.

  7. Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Milliken, A. M.; Manion, S. J.; Kaiser, W. J.; Fathauer, R. W.; Pike, W. T.

    1994-01-01

    Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

  8. Effective Medium Ratio Obeying Wideband Left-Handed Miniaturized Meta-atoms for Multi-band Applications

    NASA Astrophysics Data System (ADS)

    Hossain, Mohammad Jakir; Faruque, Mohammad Rashed Iqbal; Islam, Mohammad Tariqul

    2017-12-01

    In this paper, a miniaturized wideband left-handed (LH) meta-atom based on planar modified multiple hexagonal split ring resonators was designed, simulated, fabricated and tested that can maintain a left-handed property. An analysis and comparison of the different array structures were performed that obtained better effective medium ratio (EMR) and wideband (5.54 GHz) for multi band operations in the microwave regime. Finite-difference time-domain (FDTD) method based Computer Simulation Technology was implemented to design the meta-atom. The meta-atom showed multi-band response in conjunction with wideband and LH property over the certain frequency bands in the microwave spectra. The EMR was considerably improved compared to previously reported meta-atoms. The measured results showed good agreement with the simulated results. The dimensions, S-parameters and EMR parameters of the proposed miniaturized LH meta-atom are appropriate for L-, S-, C-, X-, and Ku-band applications.

  9. Effective Medium Ratio Obeying Wideband Left-Handed Miniaturized Meta-atoms for Multi-band Applications

    NASA Astrophysics Data System (ADS)

    Hossain, Mohammad Jakir; Faruque, Mohammad Rashed Iqbal; Islam, Mohammad Tariqul

    2018-03-01

    In this paper, a miniaturized wideband left-handed (LH) meta-atom based on planar modified multiple hexagonal split ring resonators was designed, simulated, fabricated and tested that can maintain a left-handed property. An analysis and comparison of the different array structures were performed that obtained better effective medium ratio (EMR) and wideband (5.54 GHz) for multi band operations in the microwave regime. Finite-difference time-domain (FDTD) method based Computer Simulation Technology was implemented to design the meta-atom. The meta-atom showed multi-band response in conjunction with wideband and LH property over the certain frequency bands in the microwave spectra. The EMR was considerably improved compared to previously reported meta-atoms. The measured results showed good agreement with the simulated results. The dimensions, S-parameters and EMR parameters of the proposed miniaturized LH meta-atom are appropriate for L-, S-, C-, X-, and Ku-band applications.

  10. Density Measurements in Air by Optically Exciting the Cordes Bands of I2

    NASA Technical Reports Server (NTRS)

    Balla, R. Jeffrey; Exton, Reginald J.

    2000-01-01

    We describe an optical method based on laser-induced fluorescence for obtaining instantaneous measurements of density along a line in low-density air seeded with I2. The Cordes bands of I2 (D(sup 1)sigma(sup +, sub u)) left arrow X(sup 1)sigma(sup +, sub g)) are excited with a tunable ArF excimer laser. air densities in the range (0.1-6.5) x 10(exp 17) cm(exp -3) are measured over 295-583 K using the density-dependent emission ratio of two emission bands of I2; the 340 nm bands and the diffuse-structured McLennan bands near 320 nm.

  11. X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors

    NASA Astrophysics Data System (ADS)

    Park, Mingyo; Min, Byung-Wook

    2018-03-01

    This paper presents an X-band transmit/receive switch using multi-gate NMOS transistors in a silicon-on-insulator CMOS process. For low loss and high power handling capability, floating body multi-gate NMOS transistors are adopted instead of conventional stacked NMOS transistors, resulting in 53% reduction of transistor area. Comparing to the stacked NMOS transistors, the multi gate transistor shares the source and drain region between stacked transistors, resulting in reduced chip area and parasitics. The impedance between bodies of gates in multi-gate NMOS transistors is assumed to be very large during design and confirmed after measurement. The measured input 1 dB compression point is 34 dBm. The measured insertion losses of TX and RX modes are respectively 1.7 dB and 2.0 dB at 11 GHz, and the measured isolations of TX and RX modes are >27 dB and >20 dB in X-band, respectively. The chip size is 0.086 mm2 without pads, which is 25% smaller than the T/R switch with stacked transistors.

  12. Upper critical fields and two-band superconductivity in Sr 1-xEu x(Fe 0.89Co 0.11)₂As₂ (x=0.20 and 0.46)

    DOE PAGES

    Hu, Rongwei; Mun, Eun Deok; Altarawneh, M. M.; ...

    2012-02-13

    The upper critical fields H c2(T) of single crystals of Sr 1-xEu x(Fe₀.₈₉Co₀.₁₁)₂As₂ (x=0.20 and 0.46) were determined by radio-frequency penetration depth measurements in pulsed magnetic fields. H c2(T) approaches the Pauli limiting field but shows an upward curvature with an enhancement from the orbital limited field, as inferred from the Werthamer-Helfand-Hohenberg theory. We discuss the temperature dependence of the upper critical fields and the decreasing anisotropy using a two-band BCS model.

  13. Ares I-X Flight Test Vehicle Modal Test

    NASA Technical Reports Server (NTRS)

    Buehrle, Ralph D.; Templeton, Justin D.; Reaves, Mercedes C.; Horta, Lucas G.; Gaspar, James L.; Bartolotta, Paul A.; Parks, Russel A.; Lazor, Daniel R.

    2010-01-01

    The first test flight of NASA's Ares I crew launch vehicle, called Ares I-X, was launched on October 28, 2009. Ares I-X used a 4-segment reusable solid rocket booster from the Space Shuttle heritage with mass simulators for the 5th segment, upper stage, crew module and launch abort system. Flight test data will provide important information on ascent loads, vehicle control, separation, and first stage reentry dynamics. As part of hardware verification, a series of modal tests were designed to verify the dynamic finite element model (FEM) used in loads assessments and flight control evaluations. Based on flight control system studies, the critical modes were the first three free-free bending mode pairs. Since a test of the free-free vehicle was not practical within project constraints, modal tests for several configurations during vehicle stacking were defined to calibrate the FEM. Test configurations included two partial stacks and the full Ares I-X flight test vehicle on the Mobile Launcher Platform. This report describes the test requirements, constraints, pre-test analysis, test execution and results for the Ares I-X flight test vehicle modal test on the Mobile Launcher Platform. Initial comparisons between pre-test predictions and test data are also presented.

  14. High Peak Power Test and Evaluation of S-band Waveguide Switches

    NASA Astrophysics Data System (ADS)

    Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

    1997-05-01

    The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

  15. Electronic structure and chemical bonding in La1-x Sr x MnO3 perovskite ceramics

    NASA Astrophysics Data System (ADS)

    Thenmozhi, N.; Sasikumar, S.; Sonai, S.; Saravanan, R.

    2017-04-01

    This study reports on the synthesis of La1-x Sr x MnO3 (x  =  0.3, 0.4 and 0.5) manganites by high temperature solid state reaction method using lanthanum oxide, strontium carbonate and manganese oxide as starting materials. The synthesized samples were characterized by XRD, UV-vis, SEM/EDS and VSM. Structural characterization shows that all the prepared samples have the perovskite rhombohedral structure. Influence of Sr doping on electron density distributions in the lattice structure of LaMnO3 were analyzed through maximum entropy method (MEM). Cell parameters are found to be decreasing with the addition of Sr content. The qualitative and quantitative analysis by MEM reveals that, incorporation of Sr into LaMnO3 lattice enhances the ionic nature between La and O ions and decreases the covalent nature between Mn and O ions. Optical band gap values are determined from the UV-visible absorption spectra. Particles with polygonal form are observed from the SEM micrographs. The elemental compositions of the synthesized samples are confirmed by EDS. The magnetic properties studied from the M-H plot taken at room temperature indicated that, the prepared samples are exhibited ferromagnetic behavior.

  16. Hypervelocity impact testing of L-band truss cable meteoroid shielding on Skylab

    NASA Technical Reports Server (NTRS)

    Jex, D. W.

    1973-01-01

    A series of tests was performed to determine the protection provided by the L-band truss cable meteoroid shielding installed on Skylab space station at space environment temperatures of minus 180 F. The damage sustained when three test specimens were impacted by spherical projectiles at hypersonic speed was investigated. It is concluded that the L-band truss cable meteoroid shielding provides adequate protection at the indicated temperature.

  17. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gladysiewicz, M.; Wartak, M. S.; Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be usedmore » to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.« less

  18. X-band microwave absorbing characteristics of multicomponent composites with magnetodielectric fillers

    NASA Astrophysics Data System (ADS)

    Afghahi, Seyyed Salman Seyyed; Jafarian, Mojtaba; Stergiou, Charalampos A.

    2016-12-01

    We have studied the microwave absorbing performance in the X-band (8-12.4 GHz) of epoxy composites filled with magnetic and dielectric oxides and multiwalled carbon nanotubes. To this end, pure cobalt-substituted Ba-hexaferrite and calcium titanate were synthesized with the hydrothermal method in the form of nanosized powder. Moreover, the produced powders were characterized in regard of their structural, morphological and static magnetic properties. For the electromagnetic investigation, composite samples were also prepared with various thicknesses up to 4 mm and two basic filler compositions; namely 30 wt% of BaCoFe11O19 and 30 wt% of the mixture BaCoFe11O19/CaTiO3/carbon nanotubes. The magnetic composites show strong but narrowband reflection losses up to 27.5 dB, whereas the magnetodielectric composites with maximum losses of 15.8 dB possess wider bandwidth of operation, due to improved impedance matching. Furthermore, the characteristic frequency of the maximum losses for these quarter-wavelength absorbers was verified to be in inverse proportion to the layer thickness. These findings are supported by reflectance measurements of the samples both in waveguide and free-space.

  19. An ultra-thin compact polarization-independent hexa-band metamaterial absorber

    NASA Astrophysics Data System (ADS)

    Munaga, Praneeth; Bhattacharyya, Somak; Ghosh, Saptarshi; Srivastava, Kumar Vaibhav

    2018-04-01

    In this paper, an ultra-thin compact hexa-band metamaterial absorber has been presented using single layer of dielectric. The proposed design is polarization independent in nature owing to its fourfold symmetry and exhibits high angular stability up to 60° angles of incidences for both TE and TM polarizations. The structure is ultrathin in nature with 2 mm thickness, which corresponds to λ/11.4 ( λ is the operating wavelength with respect to the highest frequency of absorption). Six distinct absorption frequencies are obtained from the design, which can be distributed among three regions, namely lower band, middle band and higher band; each region consists of two closely spaced frequencies. Thereafter, the dimensions of the proposed structure are adjusted in such a way that bandwidth enhancement occurs at each region separately. Simultaneous bandwidth enhancements at middle and higher bands have also been achieved by proper optimization of the geometrical parameters. The structure with simultaneous bandwidth enhancements at X- and Ku-bands is later fabricated and the experimental absorptivity response is in agreement with the simulated one.

  20. A Ku-band magnetically insulated transmission line oscillator with overmoded slow-wave-structure

    NASA Astrophysics Data System (ADS)

    Jiang, Tao; He, Jun-Tao; Zhang, Jian-De; Li, Zhi-Qiang; Ling, Jun-Pu

    2016-12-01

    In order to enhance the power capacity, an improved Ku-band magnetically insulated transmission line oscillator (MILO) with overmoded slow-wave-structure (SWS) is proposed and investigated numerically and experimentally. The analysis of the dispersion relationship and the resonant curve of the cold test indicate that the device can operate at the near π mode of the TM01 mode, which is useful for mode selection and control. In the particle simulation, the improved Ku-band MILO generates a microwave with a power of 1.5 GW and a frequency of 12.3 GHz under an input voltage of 480 kV and input current of 42 kA. Finally, experimental investigation of the improved Ku-band MILO is carried out. A high-power microwave (HPM) with an average power of 800 MW, a frequency of 12.35 GHz, and pulse width of 35 ns is generated under a diode voltage of 500 kV and beam current of 43 kA. The consistency between the experimental and simulated far-field radiation pattern confirms that the operating mode of the improved Ku-band MILO is well controlled in π mode of the TM01 mode. Project supported partly by the National Natural Science Foundation of China (Grant No. 61171021).