Controlled Trapping of Onion-Like Carbon (OLC) via Dielectrophoresis

NASA Astrophysics Data System (ADS)

Olariu, Marius; Arcire, Alexandru; Plonska-Brzezinska, Marta E.

2017-01-01

Manipulation of onion-like carbon (OLC), also known as carbon nano-onions (CNOs), at the level of various arrays of microelectrodes is vital in practical applications such as biological and chemical sensing, ultracapacitors (supercapacitors), electromagnetic shielding, catalysis, tribology, optical limiting and molecular junctions in scanning tunneling microscopy, and field-effect transistors. In spite of technological developments in this area, rigorous handling of carbon nano-onions towards desired locations within a device remains a challenge, and the quantity of OLC required significantly influences the price of the final electrical or electronic device. We present herein an experimental study on electromanipulation and trapping of onion-like carbon (OLC) at the level of gold-patterned interdigitated microelectrodes through dielectrophoresis. The influence of the magnitude as well as frequency of the alternating-current (AC) voltage employed for OLC trapping is discussed in detail. The effects of tuning the AC field strength and frequency on the OLC trapping behavior are also considered.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Spectroscopy of M-shell x-ray transitions in Zn-like through Co-like W

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clementson, J; Beiersdorfer, P; Brown, G V

2009-07-08

The M-shell x-ray emission of highly charged tungsten ions has been investigated at the Livermore electron beam ion trap facility. Using the SuperEBIT electron beam ion trap and a NASA x-ray calorimeter array, transitions connecting the ground configurations in the 1500-3600 eV spectral range of zinc-like W{sup 44+} through cobalt-like W{sup 47+} have been measured. The measured spectra are compared with theoretical line positions and emissivities calculated using the FAC code.

Modeling the Total Dose Radiation Effects of Hg(1-x)Cd(x)Te Photodiodes Using Numerical Device Simulators

DTIC Science & Technology

1994-01-01

Dosimetry : Analysis of dosimetry in two dewar/liquid nitrogen systems. TIME Estimate: One hour for setup, irradiation and TLD reading/analysis. IV...point indicates both electron and hole trapping at the boundary ........................ 12 3.3 Relationship between current and dose for irradiated...peak value. Carriers are collected across the vertical junction within a diffusion length. Since the electron diffusion length is much larger than for

Microstructure Hierarchical Model of Competitive e+-Ps Trapping in Nanostructurized Substances: from Nanoparticle-Uniform to Nanoparticle-Biased Systems.

PubMed

Shpotyuk, Oleh; Ingram, Adam; Bujňáková, Zdenka; Baláž, Peter

2017-12-01

Microstructure hierarchical model considering the free-volume elements at the level of interacting crystallites (non-spherical approximation) and the agglomerates of these crystallites (spherical approximation) was developed to describe free-volume evolution in mechanochemically milled As 4 S 4 /ZnS composites employing positron annihilation spectroscopy in a lifetime measuring mode. Positron lifetime spectra were reconstructed from unconstrained three-term decomposition procedure and further subjected to parameterization using x3-x2-coupling decomposition algorithm. Intrinsic inhomogeneities due to coarse-grained As 4 S 4 and fine-grained ZnS nanoparticles were adequately described in terms of substitution trapping in positron and positronium (Ps) (bound positron-electron) states due to interfacial triple junctions between contacting particles and own free-volume defects in boundary compounds. Compositionally dependent nanostructurization in As 4 S 4 /ZnS nanocomposite system was imagined as conversion from o-Ps trapping sites to positron traps. The calculated trapping parameters that were shown could be useful to characterize adequately the nanospace filling in As 4 S 4 /ZnS composites.

Field-free junctions for surface electrode ion traps

NASA Astrophysics Data System (ADS)

Jordens, Robert; Schmied, R.; Blain, M. G.; Leibfried, D.; Wineland, D.

2015-05-01

Intersections between transport guides in a network of RF ion traps are a key ingredient to many implementations of scalable quantum information processing with trapped ions. Several junction architectures demonstrated so far are limited by varying radial secular frequencies, a reduced trap depth, or a non-vanishing RF field along the transport channel. We report on the design and progress in implementing a configurable microfabricated surface electrode Y-junction that employs switchable RF electrodes. An essentially RF-field-free pseudopotential guide between any two legs of the junction can be established by applying RF potential to a suitable pair of electrodes. The transport channel's height above the electrodes, its depth and radial curvature are constant to within 15%. Supported by IARPA, Sandia, NSA, ONR, and the NIST Quantum Information Program.

High-Power X-Band Semiconductor RF Switch for Pulse Compression Systems of Future Colliders

NASA Astrophysics Data System (ADS)

Tantawi, Sami G.; Tamura, Fumihiko

2000-04-01

We describe the potential of semiconductor X-band RF switch arrays as a means of developing high power RF pulse compression systems for future linear colliders. The switch systems described here have two designs. Both designs consist of two 3dB hybrids and active modules. In the first design the module is composed of a cascaded active phase shifter. In the second design the module uses arrays of SPST (Single Pole Single Throw) switches. Each cascaded element of the phase shifter and the SPST switch has similar design. The active element consists of symmetrical three-port tee-junctions and an active waveguide window in the symmetrical arm of the tee-junction. The design methodology of the elements and the architecture of the whole switch system are presented. We describe the scaling law that governs the relation between power handling capability and number of elements. The design of the active waveguide window is presented. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of tens of megawatts at X-band.

The X-ARAPUCA: an improvement of the ARAPUCA device

NASA Astrophysics Data System (ADS)

Machado, A. A.; Segreto, E.; Warner, D.; Fauth, A.; Gelli, B.; Máximo, R.; Pissolatti, A.; Paulucci, L.; Marinho, F.

2018-04-01

The ARAPUCA is a novel technology for the detection of liquid argon scintillation light, which has been proposed for the far detector of the Deep Underground Neutrino Experiment. The X-ARAPUCA is an improvement to the original ARAPUCA design, retaining the original ARAPUCA concept of photon trapping inside a highly reflective box while using a wavelength shifting slab inside the box to increase the probability of collecting trapped photons onto a silicon photomultiplier array. The X-ARAPUCA concept is presented and its performances are compared to those of a standard ARAPUCA by means of analytical calculations and Monte Carlo simulations.

Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

PubMed

Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

2016-10-12

We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

Producibility of Vertically Integrated Photodiode (VIP)tm scanning focal plane arrays

NASA Astrophysics Data System (ADS)

Turner, Arthur M.; Teherani, Towfik; Ehmke, John C.; Pettitt, Cindy; Conlon, Peggy; Beck, Jeffrey D.; McCormack, Kent; Colombo, Luigi; Lahutsky, Tom; Murphy, Terry; Williams, Robert L.

1994-07-01

Vertically integrated photodiode, VIPTM, technology is now being used to produce second generation infrared focal plane arrays with high yields and performance. The VIPTM process employs planar, ion implanted, n on p diodes in HgCdTe which is epoxy hybridized directly to the read out integrated circuits on 100 mm Si wafers. The process parameters that are critical for high performance and yield include: HgCdTe dislocation density and thickness, backside passivation, frontside passivation, and junction formation. Producibility of infrared focal plane arrays (IRFPAs) is also significantly enhanced by read out integrated circuits (ROICs) which have the ability to deselect defective pixels. Cold probe screening before lab dewar assembly reduces costs and improves cycle times. The 240 X 1 and 240 X 2 scanning array formats are used to demonstrate the effect of process optimization, deselect, and cold probe screening on yield and cycle time. The versatility of the VIPTM technology and its extension to large area arrays is demonstrated using 240/288 X 4 and 480 X 5 TDI formats. Finally, the high performance of VIPTM IRFPAs is demonstrated by comparing data from a 480 X 5 to the SADA-II specification.

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

PubMed

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

In-Situ Grown P-N Junctions in MERCURY(1-X) Cadmium(x) Telluride for IR Detectors.

NASA Astrophysics Data System (ADS)

Rao, Vithal Rajaram

In-situ grown p-n junctions in mercury cadmium telluride (Hg_{1-x}Cd _{x}Te with x between 0.2-0.3) were fabricated and characterized in this study. Fabrication of these junctions involved the growth of p-n structures at 370^circC on CdTe substrates by Organometallic Vapor Phase Epitaxy. P-type doping with arsenic was achieved by using tertiarybutylarsine as the precursor. N-type doping was obtained either with indium, using trimethylindium as the precursor or by leaving the layer undoped. These p-n structures were processed to fabricate photodiodes. Their electrical performance was evaluated and conclusions regarding current mechanisms which determine their behavior were drawn. By varying the Hg pressure between 0.07-0.13 atm, p-type doping level in the 10^{16 }/cm^3-rm2times10 ^{17}/cm^3 range was achieved. At higher values of Hg pressure, the arsenic doping level in the layer increased significantly. This is possibly due to an increase in Te vacancies, allowing arsenic to occupy more group VI sites where they behave as acceptors. The activation efficiency of arsenic in the layers was measured to be equal to 50%. A high temperature anneal at 415 ^circC for 15 minutes did not result in any increase in the activation efficiency, possibly indicating the presence of stable As-complexes in the layer. Growth of p^+n structures was carried out in a single run. The acceptor concentration in the p-type cap layer was 5-rm10times10 ^{16}/cm^3. Indium doped n-type base layers had a carrier concentration of 1- rm2times10^{16}/cm^3 , while undoped layers had a n-type background carrier concentration of 4-rm6times10^ {14}/cm^3. The cap layer was 3 μm thick with x = 0.30, while the base layer was 8mum thick with x = 0.26. Under the growth conditions, arsenic showed a diffusion coefficient of rm2times10 ^{13}cm^2/s, which was higher than the interdiffusion coefficient of the alloy junction. This resulted in placement of the p-n junction in the lower bandgap base layer, which is necessary for high quantum efficiency devices. Photodiodes showed a cutoff wavelength of 7.5 mum, which correlates with the alloy composition of the base layer. Measured R_0 A of these diodes varied between 1-100 ohm-cm ^2. In the lower R_0A diodes, reverse bias was dominated by surface currents, possibly due to degradation of the passivating layer. Diodes with higher R_0A showed under reverse bias that trap assisted tunneling current dominated their performance. The origin of these traps is process related and could correspond to the presence of inactivated arsenic close to the p-n junction. Forward bias was dominated by diffusion and recombination currents, while the presence of additional leakage currents was evident.

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewandowski, S.J.

1991-04-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-{ital T}{sub {ital c}} superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming amore » series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-{ital T}{sub {ital c}} materials are pointed out as a potential source of additional noise.« less

6 x 6-cm fully depleted pn-junction CCD for high-resolution spectroscopy in the 0.1- to 15-keV photon energy range

NASA Astrophysics Data System (ADS)

von Zanthier, Christoph; Holl, Peter; Kemmer, Josef; Lechner, Peter; Maier, B.; Soltau, Heike; Stoetter, R.; Braeuninger, Heinrich W.; Dennerl, Konrad; Haberl, Frank; Hartmann, R.; Hartner, Gisela D.; Hippmann, H.; Kastelic, E.; Kink, W.; Krause, N.; Meidinger, Norbert; Metzner, G.; Pfeffermann, Elmar; Popp, M.; Reppin, Claus; Stoetter, Diana; Strueder, Lothar; Truemper, Joachim; Weber, U.; Carathanassis, D.; Engelhard, S.; Gebhart, Th.; Hauff, D.; Lutz, G.; Richter, R. H.; Seitz, H.; Solc, P.; Bihler, Edgar; Boettcher, H.; Kendziorra, Eckhard; Kraemer, J.; Pflueger, Bernhard; Staubert, Ruediger

1998-04-01

The concept and performance of the fully depleted pn- junction CCD system, developed for the European XMM- and the German ABRIXAS-satellite missions for soft x-ray imaging and spectroscopy in the 0.1 keV to 15 keV photon range, is presented. The 58 mm X 60 mm large pn-CCD array uses pn- junctions for registers and for the backside instead of MOS registers. This concept naturally allows to fully deplete the detector volume to make it an efficient detector to photons with energies up to 15 keV. For high detection efficiency in the soft x-ray region down to 100 eV, an ultrathin pn-CCD backside deadlayer has been realized. Each pn-CCD-channel is equipped with an on-chip JFET amplifier which, in combination with the CAMEX-amplifier and multiplexing chip, facilitates parallel readout with a pixel read rate of 3 MHz and an electronic noise floor of ENC < e-. With the complete parallel readout, very fast pn-CCD readout modi can be implemented in the system which allow for high resolution photon spectroscopy of even the brightest x-ray sources in the sky.

Transport in arrays of submicron Josephson junctions over a ground plane

NASA Astrophysics Data System (ADS)

Ho, Teressa Rae

One-dimensional (1D) and two-dimensional (2D) arrays of Al islands linked by submicron Al/Alsb{x}Osb{y}/Al tunnel junctions were fabricated on an insulating layer grown on a ground plane. The arrays were cooled to temperatures as low as 20 mK where the Josephson coupling energy Esb{J} of each junction and the charging energy Esb{C} of each island were much greater than the thermal energy ksb{B}T. The capacitance Csb{g} between each island and the ground plane was much greater than the junction capacitance C. Two classes of arrays were studied. In the first class, the normal state tunneling resistance of the junctions was much larger than the resistance quantum for single electrons, Rsb{N}≫ Rsb{Qe}equiv h/esp2≈ 25.8 kOmega, and the islands were driven normal by an applied magnetic field such that Esb{J}=0 and the array was in the Coulomb blockade regime. The arrays were made on degenerately-doped Si, thermally oxidized to a thickness of approximately 100 nm. The current-voltage (I-V) characteristics of a 1D and a 2D array were measured and found to display a threshold voltage Vsb{T} below which little current flows. Above threshold the array current I scaled as (V/Vsb{T}-1)sp{zeta}; this scaling behavior was interpreted as a dynamic critical phenomenon. A 2D array with intentionally-added island area disorder was also measured and found to have a similar threshold voltage Vsb{T} but a larger scaling exponent zeta than the array with only intrinsic disorder. In the second class of arrays, the normal state tunneling resistance of the junctions was close to the resistance quantum for Cooper pairs, Rsb{N}≈ Rsb{Q}equiv h/4esp2≈ 6.45kOmega, such that Esb{J}/Esb{C}≈1. The arrays were made on GaAs/Alsb{0.3}Gasb{0.7}As heterostructures with a two-dimensional electron gas (2DEG) approximately 100 nm below the surface. The resistance per square of the 2DEG, Rsb{g}, could be varied by applying a large voltage between the 2DEG and a metallic back gate; varying Rsb{g} varied the dissipation associated with the local electrodynamic environment. For a 2D array, the I-V characteristics made a transition from superconductor-like to insulator-like as the resistance of the ground plane Rsb{g} was increased. The zero-bias resistance Rsb0 of the array increased exponentially with Rsb{g}. A small magnetic field was applied perpendicularly to the array, and the I-V characteristics of the array changed from superconductor-like to insulator-like as the magnetic field (measured in units of frustration f, the number of flux quanta per unit cell) was increased. Increasing Rsb{g} drove the magnetic field-driven superconductor-like to insulator-like transition of the I-V characteristics to lower values of f, and increasing f drove the dissipation-driven transition to lower values of Rsb{g}. Three 1D arrays were also measured. One array displayed superconducting behavior at low temperature, and the size of the supercurrent increased, reached a maximum, and then decreased, as Rsb{g} was increased. Two arrays displayed insulating behavior at low temperature, and the size of the Coulomb gap increased with increasing Rsb{g}. The zero-bias resistance of the array Rsb0 increased faster than exponentially with Rsb{g}.

High density processing electronics for superconducting tunnel junction x-ray detector arrays

NASA Astrophysics Data System (ADS)

Warburton, W. K.; Harris, J. T.; Friedrich, S.

2015-06-01

Superconducting tunnel junctions (STJs) are excellent soft x-ray (100-2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays - currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I-V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

Radial junction solar cells based on heterojunction with intrinsic thin layer (HIT) structure

NASA Astrophysics Data System (ADS)

Shen, Haoting

The radial junction wire array structure was previously proposed as a solar cell geometry to separate the direction of carrier collection from the direction of light absorption, thereby circumventing the need to use high quality but expensive single crystal silicon (c-Si) material that has long minority carrier diffusion lengths. The Si radial junction structure can be realized by forming radial p-n junctions on Si pillar/wire arrays that have a diameter comparable to the minority carrier diffusion length. With proper design, the Si pillar arrays are also able to enhance light trapping and thereby increase the light absorption. However, the larger junction area and surface area on the pillar arrays compared to traditional planar junction Si solar cells makes it challenging to fabricate high performance devices due an in increase in surface defects. Therefore, effective surface passivation strategies are essential for radial junction devices. Hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) using a heterojunction with intrinsic thin layer (HIT) structure has previously been demonstrated as a very effective surface passivation layer for planar c-Si solar cells. It is therefore of interest to use a-Si:H in a HIT layer structure for radial p-n junction c-Si pillar array solar cells. This poses several challenges, however, including the need to fabricate ultra-thin a-Si:H layers conformally on high aspect ratio Si pillars, control the crystallinity at the a-Si:H/c-Si interface to yield a low interface state density and optimize the layer thicknesses, doping and contacts to yield high performance devices. This research in this thesis was aimed at developing the processing technology required to apply the HIT structure to radial junction Si pillar array solar cell devices and to evaluate the device characteristics. Initial studies focused on understanding the effects of process conditions on the growth rate and conformality of a-Si:H deposited by PECVD using SiH4 and H 2 on high aspect ratio trench structures. Experimentally, it was found that the a-Si:H growth rate increased with increasing SiH4 flow rate up to a point after which it saturated at a maximum growth rate. In addition, it was found that higher SiH4 flow rates resulted in improved thickness uniformity along the trenches. A model based on gas transport and surface reaction of SiH3 in trenches was developed and was used to explain the experimental results and predict conditions that would yield improved thickness uniformity. The knowledge gained in the PECVD deposition studies was then used to prepare HIT radial junction Si pillar array solar cell devices. Deep reactive ion etching (DRIE) was used to prepare Si pillar arrays on p-type (111) c-Si wafers. A process was developed to prepare n-type a-Si:H films from SiH 4 and H2, with PH3 as doping gas. Indium tin oxide (ITO) deposited by sputter deposition and Al-doped ZnO deposited by atomic layer deposition (ALD) were evaluated as transparent conductive top contacts to the n-type a-Si:H layer. By adjusting the SiH4/H2 gas flow ratio, intrinsic a-Si:H was grown on the c-Si surface without epitaxial micro-crystalline growth. Continuous and pulsed deposition modes were investigated for deposition of the intrinsic and n-type a-Si:H layers on the c-Si pillars. The measurements of device light performance shown that slightly lower short circuit current density (Jsc, 32 mA/cm2 to 35 mA/cm 2) but higher open circuit voltage (Voc, 0.56 V to .47 V) were obtained on the pulsed devices. As the result, higher efficiency (11.6%) was achieved on the pulsed devices (10.6% on the continuous device). The improved performance of the pulsed deposition devices was explained as arising from a higher SiH3 concentration in the initial plasma which lead to a more uniform layer thickness. Planar and radial junction Si wire array HIT solar cell devices were then fabricated and the device performance was compared. A series of p-type c-Si wafers with varying resistivity/doping density were used for this study in order to evaluate the effect of carrier diffusion length on device performance. The saturation current densities (J0) of the radial junction devices were consistently larger than that of the planar devices as a result of the larger junction area. Despite the increased leakage currents, the radial junction HIT cells exhibited similar Voc compared to the planar cells. In addition, at high doping densities (5˜1018 cm-3), the J sc (16.7mA/cm2) and collection efficiency (6.3%) of the radial junction devices was higher than that of comparable planar cells (J sc 12.7 mA/cm2 and efficiency 5.2%), demonstrating improved collection of photogenerated carriers in this geometry.

Producing CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1988-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1991-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Precise Heater Controller with rf-Biased Josephson Junctions

NASA Technical Reports Server (NTRS)

Green, Colin J.; Sergatskov, Dmitri A.; Duncan, R. V.

2003-01-01

Paramagnetic susceptibility thermometers used in fundamental physics experiments are capable of measuring temperature changes with a precision of a part in 2 x 10(exp 10). However, heater controllers are only able to control open-loop power dissipation to about a part in 10(exp 5). We used an array of rf-biased Josephson junctions to precisely control the electrical power dissipation in a heater resistor mounted on a thermally isolated cryogenic platform. Theoretically, this method is capable of controlling the electrical power dissipation to better than a part in 10(exp 12). However, this level has not yet been demonstrated experimentally. The experiment consists of a liquid helium cell that also functions as a high-resolution PdMn thermometer, with a heater resistor mounted on it. The cell is thermally connected to a temperature-controlled cooling stage via a weak thermal link. The heater resistor is electrically connected to the array of Josephson junctions using superconducting wire. An rf-biased array of capacitively shunted Josephson junctions drives the voltage across the heater. The quantized voltage across the resistor is Vn = nf(h/2e), where h is Planck's constant, f is the array biasing frequency, e is the charge of an electron, and n is the integer quantum state of the Josephson array. This results in an electrical power dissipation on the cell of Pn = (Vn)(sup 2/R), where R is the heater resistance. The change of the quantum state of the array changes the power dissipated in the heater, which in turn, results in the change of the cell temperature. This temperature change is compared to the expected values based on the known thermal standoff resistance of the cell from the cooling stage. We will present our initial experimental results and discuss future improvements. This work has been funded by the Fundamental Physics Discipline of the Microgravity Science Office of NASA, and supported by a no-cost equipment loan from Sandia National Laboratories.

Synaptic plasticity and oscillation at zinc tin oxide/silver oxide interfaces

NASA Astrophysics Data System (ADS)

Murdoch, Billy J.; McCulloch, Dougal G.; Partridge, James G.

2017-02-01

Short-term plasticity, long-term potentiation, and pulse interval dependent plasticity learning/memory functions have been observed in junctions between amorphous zinc-tin-oxide and silver-oxide. The same junctions exhibited current-controlled negative differential resistance and when connected in an appropriate circuit, they behaved as relaxation oscillators. These oscillators produced voltage pulses suitable for device programming. Transmission electron microscopy, energy dispersive X-ray spectroscopy, and electrical measurements suggest that the characteristics of these junctions arise from Ag+/O- electromigration across a highly resistive interface layer. With memory/learning functions and programming spikes provided in a single device structure, arrays of similar devices could be used to form transistor-free neuromorphic circuits.

Synchronization of Large Josephson-Junction Arrays by Traveling Electromagnetic Waves

NASA Astrophysics Data System (ADS)

Galin, M. A.; Borodianskyi, E. A.; Kurin, V. V.; Shereshevskiy, I. A.; Vdovicheva, N. K.; Krasnov, V. M.; Klushin, A. M.

2018-05-01

Mutual synchronization of many Josephson junctions is required for superradiant enhancement of the emission power. However, the larger the junction array is, the more difficult is the synchronization, especially when the array size becomes much larger than the emitted wavelength. Here, we study experimentally Josephson emission from such larger-than-the-wavelength Nb /NbSi /Nb junction arrays. For one of the arrays we observe a clear superradiant enhancement of emission above a threshold number of active junctions. The arrays exhibit strong geometrical resonances, seen as steps in current-voltage characteristics. However, radiation patterns of the arrays have forward-backward asymmetry, which is inconsistent with the solely geometrical resonance (standing-wave) mechanism of synchronization. We argue that the asymmetry provides evidence for an alternative mechanism of synchronization mediated by unidirectional traveling-wave propagation along the array (such as a surface plasmon). In this case, emission occurs predominantly in the direction of propagation of the traveling wave. Our conclusions are supported by numerical modeling of Josephson traveling-wave antenna. We argue that such a nonresonant mechanism of synchronization opens a possibility for phase locking of very large arrays of oscillators.

UV and visible light photocatalytic activity of Au/TiO2 nanoforests with Anatase/Rutile phase junctions and controlled Au locations.

PubMed

Yu, Yang; Wen, Wei; Qian, Xin-Yue; Liu, Jia-Bin; Wu, Jin-Ming

2017-01-24

To magnify anatase/rutile phase junction effects through appropriate Au decorations, a facile solution-based approach was developed to synthesize Au/TiO 2 nanoforests with controlled Au locations. The nanoforests cons®isted of anatase nanowires surrounded by radially grown rutile branches, on which Au nanoparticles were deposited with preferred locations controlled by simply altering the order of the fabrication step. The Au-decoration increased the photocatalytic activity under the illumination of either UV or visible light, because of the beneficial effects of either electron trapping or localized surface plasmon resonance (LSPR). Gold nanoparticles located preferably at the interface of anatase/rutile led to a further enhanced photocatalytic activity. The appropriate distributions of Au nanoparticles magnify the beneficial effects arising from the anatase/rutile phase junctions when illuminated by UV light. Under the visible light illumination, the LSPR effect followed by the consecutive electron transfer explains the enhanced photocatalysis. This study provides a facile route to control locations of gold nanoparticles in one-dimensional nanostructured arrays of multiple-phases semiconductors for achieving a further increased photocatalytic activity.

Probing the nature and resistance of the molecule-electrode contact in SAM-based junctions.

PubMed

Sangeeth, C S Suchand; Wan, Albert; Nijhuis, Christian A

2015-07-28

It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (C(SAM)) and the resistance of the SAM (R(SAM))), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of Ag(TS)-SC(n)//GaO(x)/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than R(SAM). The C(SAM) and R(SAM) are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible.

Single-molecule analysis of diffusion and trapping of STIM1 and Orai1 at endoplasmic reticulum–plasma membrane junctions

PubMed Central

Wu, Minnie M.; Covington, Elizabeth D.; Lewis, Richard S.

2014-01-01

Following endoplasmic reticulum (ER) Ca2+ depletion, STIM1 and Orai1 complexes assemble autonomously at ER–plasma membrane (PM) junctions to trigger store-operated Ca2+ influx. One hypothesis to explain this process is a diffusion trap in which activated STIM1 diffusing in the ER becomes trapped at junctions through interactions with the PM, and STIM1 then traps Orai1 in the PM through binding of its calcium release-activated calcium activation domain. We tested this model by analyzing STIM1 and Orai1 diffusion using single-particle tracking, photoactivation of protein ensembles, and Monte Carlo simulations. In resting cells, STIM1 diffusion is Brownian, while Orai1 is slightly subdiffusive. After store depletion, both proteins slow to the same speeds, consistent with complex formation, and are confined to a corral similar in size to ER–PM junctions. While the escape probability at high STIM:Orai expression ratios is <1%, it is significantly increased by reducing the affinity of STIM1 for Orai1 or by expressing the two proteins at comparable levels. Our results provide direct evidence that STIM-Orai complexes are trapped by their physical connections across the junctional gap, but also reveal that the complexes are surprisingly dynamic, suggesting that readily reversible binding reactions generate free STIM1 and Orai1, which engage in constant diffusional exchange with extrajunctional pools. PMID:25057023

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

PubMed Central

2013-01-01

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

Microfabricated linear Paul-Straubel ion trap

DOEpatents

Mangan, Michael A [Albuquerque, NM; Blain, Matthew G [Albuquerque, NM; Tigges, Chris P [Albuquerque, NM; Linker, Kevin L [Albuquerque, NM

2011-04-19

An array of microfabricated linear Paul-Straubel ion traps can be used for mass spectrometric applications. Each ion trap comprises two parallel inner RF electrodes and two parallel outer DC control electrodes symmetric about a central trap axis and suspended over an opening in a substrate. Neighboring ion traps in the array can share a common outer DC control electrode. The ions confined transversely by an RF quadrupole electric field potential well on the ion trap axis. The array can trap a wide array of ions.

GaAs nanopillar-array solar cells employing in situ surface passivation

PubMed Central

Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

2013-01-01

Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

Surface leakage current in 12.5  μm long-wavelength HgCdTe infrared photodiode arrays.

PubMed

Qiu, Weicheng; Hu, Weida; Lin, Chun; Chen, Xiaoshuang; Lu, Wei

2016-02-15

Long-wavelength (especially >12  μm) focal plane array (FPA) infrared detection is the cutting edge technique for third-generation infrared remote sensing. However, dark currents, which are very sensitive to the growth of small Cd composition HgCdTe, strongly limits the performance of long wavelength HgCdTe photodiode arrays in FPAs. In this Letter, 12.5 μm long-wavelength Hg_1-xCd_xTe (x≈0.219) infrared photodiode arrays are reported. The variable-area and variable-temperature electrical characteristics of the long-wavelength infrared photodiodes are measured. The characteristics of the extracted zero-bias resistance-area product (l/R₀A) varying with the perimeter-to-area (P/A) ratio clearly show that surface leakage current mechanisms severely limit the overall device performance. A sophisticated model has been developed for investigating the leakage current mechanism in the photodiodes. Modeling of temperature-dependent I-V characteristic indicates that the trap-assisted tunneling effect dominates the dark current at 50 K resulting in nonuniformities in the arrays. The extracted trap density, approximately 10¹³-10¹⁴  cm^-3, with an ionized energy of 30 meV is determined by simulation. The work described in this Letter provides the basic mechanisms for a better understanding of the leakage current mechanism for long-wavelength (>12  μm) HgCdTe infrared photodiode arrays.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, M. A.; Yang, G.; Sun, X.; Lu, W.; Merritt, S.; Beck, J.

2016-01-01

We present performance data for novel photon-counting detectors for free space optical communication. NASA GSFC is testing the performance of two types of novel photon-counting detectors 1) a 2x8 mercury cadmium telluride (HgCdTe) avalanche array made by DRS Inc., and a 2) a commercial 2880-element silicon avalanche photodiode (APD) array. We present and compare dark count, photon-detection efficiency, wavelength response and communication performance data for these detectors. We successfully measured real-time communication performance using both the 2 detected-photon threshold and AND-gate coincidence methods. Use of these methods allows mitigation of dark count, after-pulsing and background noise effects. The HgCdTe APD array routinely demonstrated photon detection efficiencies of greater than 50% across 5 arrays, with one array reaching a maximum PDE of 70%. We performed high-resolution pixel-surface spot scans and measured the junction diameters of its diodes. We found that decreasing the junction diameter from 31 micrometers to 25 micrometers doubled the e- APD gain from 470 for an array produced in the year 2010 to a gain of 1100 on an array delivered to NASA GSFC recently. The mean single-photon SNR was over 12 and the excess noise factors measurements were 1.2-1.3. The commercial silicon APD array exhibited a fast output with rise times of 300 ps and pulse widths of 600 ps. On-chip individually filtered signals from the entire array were multiplexed onto a single fast output.

Development of a TES-Based Anti-Coincidence Detector for Future X-Ray Observations

NASA Technical Reports Server (NTRS)

Bailey, Catherine N.; Adams, J. S.; Bandler, S. R.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.; Sadleir, J. E.;

Development of a TES-Based Anti-Coincidence Detector for Future X-ray Observatories

NASA Technical Reports Server (NTRS)

Bailey, Catherine

2011-01-01

Microcalorimeters onboard future x-ray observatories require an anti-coincidence detector to remove environmental backgrounds. In order to most effectively integrate this anticoincidence detector with the main microcalorimeter array, both instruments should use similar read-out technology. The detectors used in the Cryogenic Dark Matter Search (CDMS) use a phonon measurement technique that is well suited for an anti-coincidence detector with a microcalorimeter array using SQUID readout. This technique works by using a transition-edge sensor (TES) connected to superconducting collection fins to measure the athermal phonon signal produced when an event occurs in the substrate crystal. Energy from the event propagates through the crystal to the superconducting collection fins, creating quasiparticles, which are then trapped as they enter the TES where they produce a signal. We are currently developing a prototype anti-coincidence detector for future x-ray missions and have recently fabricated test devices with Mo/Au TESs and Al collection fins. We will present results from the first tests of these devices which indicate a proof of concept that quasiparticle trapping is occurring in these materials.

Ion Trap Array-Based Systems And Methods For Chemical Analysis

DOEpatents

Whitten, William B [Oak Ridge, TN; Ramsey, J Michael [Knoxville, TN

2005-08-23

An ion trap-based system for chemical analysis includes an ion trap array. The ion trap array includes a plurality of ion traps arranged in a 2-dimensional array for initially confining ions. Each of the ion traps comprise a central electrode having an aperture, a first and second insulator each having an aperture sandwiching the central electrode, and first and second end cap electrodes each having an aperture sandwiching the first and second insulator. A structure for simultaneously directing a plurality of different species of ions out from the ion traps is provided. A spectrometer including a detector receives and identifies the ions. The trap array can be used with spectrometers including time-of-flight mass spectrometers and ion mobility spectrometers.

Synchronization of a Josephson junction array in terms of global variables

NASA Astrophysics Data System (ADS)

Vlasov, Vladimir; Pikovsky, Arkady

2013-08-01

We consider an array of Josephson junctions with a common LCR load. Application of the Watanabe-Strogatz approach [Physica DPDNPDT0167-278910.1016/0167-2789(94)90196-1 74, 197 (1994)] allows us to formulate the dynamics of the array via the global variables only. For identical junctions this is a finite set of equations, analysis of which reveals the regions of bistability of the synchronous and asynchronous states. For disordered arrays with distributed parameters of the junctions, the problem is formulated as an integro-differential equation for the global variables; here stability of the asynchronous states and the properties of the transition synchrony-asynchrony are established numerically.

Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

NASA Astrophysics Data System (ADS)

King, Roger; Michalzik, Rainer; Jung, Christian; Grabherr, Martin; Eberhard, Franz; Jaeger, Roland; Schnitzer, Peter; Ebeling, Karl J.

1998-04-01

We have designed and fabricated 4 X 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of 2D, high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metallization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 micrometers are quite homogeneous. Arrays with 3 micrometers , 6 micrometers and 10 micrometers active diameter lasers have been investigated. The small devices show threshold currents of 600 (mu) A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz and transmitted pseudo random data at 8 Gbit/s channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of 1 X 2 mm2 footprint area.

Microfabricated ion trap array

DOEpatents

Blain, Matthew G [Albuquerque, NM; Fleming, James G [Albuquerque, NM

2006-12-26

A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

PubMed

Hahn, Christopher; Zhang, Zhaoyu; Fu, Anthony; Wu, Cheng Hao; Hwang, Yun Jeong; Gargas, Daniel J; Yang, Peidong

2011-05-24

Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the ⟨002⟩ direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from In(x)Ga(1-x)N nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.

1D array of dark spot traps formed by counter-propagating nested Gaussian laser beams for trapping and moving atomic qubits

NASA Astrophysics Data System (ADS)

Gillen-Christandl, Katharina; Frazer, Travis D.

2017-04-01

The standing wave of two identical counter-propagating Gaussian laser beams constitutes a 1D array of bright spots that can serve as traps for single neutral atoms for quantum information operations. Detuning the frequency of one of the beams causes the array to start moving, effectively forming a conveyor belt for the qubits. Using a pair of nested Gaussian laser beams with different beam waists, however, forms a standing wave with a 1D array of dark spot traps confined in all dimensions. We have computationally explored the trap properties and limitations of this configuration and, trading off trap depth and frequencies with the number of traps and trap photon scattering rates, we determined the laser powers and beam waists needed for useful 1D arrays of dark spot traps for trapping and transporting atomic qubits in neutral atom quantum computing platforms.

Quadrupole ion traps and trap arrays: geometry, material, scale, performance.

PubMed

Ouyang, Z; Gao, L; Fico, M; Chappell, W J; Noll, R J; Cooks, R G

2007-01-01

Quadrupole ion traps are reviewed, emphasizing recent developments, especially the investigation of new geometries, guided by multiple particle simulations such as the ITSIM program. These geometries include linear ion traps (LITs) and the simplified rectilinear ion trap (RIT). Various methods of fabrication are described, including the use of rapid prototyping apparatus (RPA), in which 3D objects are generated through point-by-point laser polymerization. Fabrication in silicon using multilayer semi-conductor fabrication techniques has been used to construct arrays of micro-traps. The performance of instruments containing individual traps as well as arrays of traps of various sizes and geometries is reviewed. Two types of array are differentiated. In the first type, trap arrays constitute fully multiplexed mass spectrometers in which multiple samples are examined using multiple sources, analyzers and detectors, to achieve high throughput analysis. In the second, an array of individual traps acts collectively as a composite trap to increase trapping capacity and performance for a single sample. Much progress has been made in building miniaturized mass spectrometers; a specific example is a 10 kg hand-held tandem mass spectrometer based on the RIT mass analyzer. The performance of this instrument in air and water analysis, using membrane sampling, is described.

Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.

PubMed

Li, Yantao; Hu, Weida; Ye, Zhenhua; Chen, Yiyu; Chen, Xiaoshuang; Lu, Wei

2017-04-01

Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg_1-xCd_xTe (x=0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs.

New Content Addressable Memory (CAM) Technologies for Big Data and Intelligent Electronics Enabled by Magneto-Electric Ternary CAM

DTIC Science & Technology

2017-12-11

provides ultra-low energy search operations. To improve throughput, the in-array pipeline scheme has been developed, allowing the MeTCAM to operate at a...controlled magnetic tunnel junction (VC-MTJ), which not only reduces cell area (thus achieving higher density) but also eliminates standby energy . This...Variations of the cell design are presented and evaluated. The results indicated a potential 90x improvement in the energy efficiency and a 50x

Strong Electron Self-Cooling in the Cold-Electron Bolometers Designed for CMB Measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.; Pankratov, A. L.; Gordeeva, A. V.; Zbrozhek, V. O.; Revin, L. S.; Shamporov, V. A.; Masi, S.; de Bernardis, P.

2018-03-01

We have realized cold-electron bolometers (CEB) with direct electron self-cooling of the nanoabsorber by SIN (Superconductor-Insulator-Normal metal) tunnel junctions. This electron self-cooling acts as a strong negative electrothermal feedback, improving noise and dynamic properties. Due to this cooling the photon-noise-limited operation of CEBs was realized in array of bolometers developed for the 345 GHz channel of the OLIMPO Balloon Telescope in the power range from 10 pW to 20 pW at phonon temperature Tph =310 mK. The negative electrothermal feedback in CEB is analogous to TES but instead of artificial heating we use cooling of the absorber. The high efficiency of the electron self-cooling to Te =100 mK without power load and to Te=160 mK under power load is achieved by: - a very small volume of the nanoabsorber (0.02 μm3) and a large area of the SIN tunnel junctions, - effective removal of hot quasiparticles by arranging double stock at both sides of the junctions and close position of the normal metal traps, - self-protection of the 2D array of CEBs against interferences by dividing them between N series CEBs (for voltage interferences) and M parallel CEBs (for current interferences), - suppression of Andreev reflection by a thin layer of Fe in the AlFe absorber. As a result even under high power load the CEBs are working at electron temperature Te less than Tph . To our knowledge, there is no analogue in the bolometers technology in the world for bolometers working at electron temperature colder than phonon temperature.

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

NASA Astrophysics Data System (ADS)

Westerhout, R. J.; Musca, C. A.; Antoszewski, J.; Dell, J. M.; Faraone, L.

2007-08-01

In this work, gated midwave infrared (MWIR) Hg1 x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 × 1016 cm-3 and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R 0 A of 1 5 × 104 Ωcm2 with zero gate bias. Application of 2 V to the gate improves the R 0 A by more than two orders of magnitude to 6.0 × 106 Ωcm2, which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I n = α I β f -0.5 trend was observed above 200 pA reverse bias dark current, with α = 3.5 × 10-5 and β = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.

Study of the formation, stability, and X-ray emission of the Z-pinch formed during implosion of fiber arrays at the Angara-5-1 facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleksandrov, V. V.; Volkov, G. S.; Grabovski, E. V.

Results from experimental studies on the implosion of arrays made of kapron fibers coated with different metals (Al, In, Sn, and Bi) are presented. It is shown that the power, total energy, and spectrum of radiation emitted by the imploding array depend on the number of metallized fibers and the mass of the metal layer deposited on them but are independent of the metal characteristics (density, atomic number, etc.). Analysis of frame X-ray images shows that the Z-pinches formed in the implosion of metallized kapron fiber arrays are more stable than those formed in wire arrays and that MHD perturbationsmore » in them develop at a slower growth rate. Due to the lower rate of plasma production from kapron fibers, the plasma formed at the periphery of the array forms a layer that plays the role of a hohlraum wall partially trapping soft X-ray emission of the Z-pinch formed in the implosion of the material of the deposited metal layer. The closure of the anode aperture doubles the energy of radiation emitted in the radial direction.« less

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Conditions for synchronization in Josephson-junction arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chernikov, A.A.; Schmidt, G.

An effective perturbation theoretical method has been developed to study the dynamics of Josephson Junction series arrays. It is shown that the inclusion of Junction capacitances, often ignored, has a significant impact on synchronization. Comparison of analytic with computational results over a wide range of parameters shows excellent agreement.

Superconducting Oxide Films for Multispectral Infrared Sensors

DTIC Science & Technology

1989-02-07

films of both low - and high-temperature supercon- resistances below our measurement sensitivity of 4x 10-10 ductors, including BaPb,-Bi2 O.,’ NbN /BN, 2...Simon, " NbN /BN Granular Films - A states, such as normal metal barriers, will improve the noise Sensitive, High-Speed Detector For Pulsed Far- Infrared ...A. W. Kleinsasser, and R. L Sandstrom, "Electron Trap States and Low Frequency Noise in Tunnel Summary and Conclusions Junctions", IREE Trans. nMa n

Dark State Optical Lattice with a Subwavelength Spatial Structure

NASA Astrophysics Data System (ADS)

Wang, Y.; Subhankar, S.; Bienias, P.; ŁÄ cki, M.; Tsui, T.-C.; Baranov, M. A.; Gorshkov, A. V.; Zoller, P.; Porto, J. V.; Rolston, S. L.

2018-02-01

We report on the experimental realization of a conservative optical lattice for cold atoms with a subwavelength spatial structure. The potential is based on the nonlinear optical response of three-level atoms in laser-dressed dark states, which is not constrained by the diffraction limit of the light generating the potential. The lattice consists of a one-dimensional array of ultranarrow barriers with widths less than 10 nm, well below the wavelength of the lattice light, physically realizing a Kronig-Penney potential. We study the band structure and dissipation of this lattice and find good agreement with theoretical predictions. Even on resonance, the observed lifetimes of atoms trapped in the lattice are as long as 44 ms, nearly 1 05 times the excited state lifetime, and could be further improved with more laser intensity. The potential is readily generalizable to higher dimensions and different geometries, allowing, for example, nearly perfect box traps, narrow tunnel junctions for atomtronics applications, and dynamically generated lattices with subwavelength spacings.

ABMapper: a suffix array-based tool for multi-location searching and splice-junction mapping.

PubMed

Lou, Shao-Ke; Ni, Bing; Lo, Leung-Yau; Tsui, Stephen Kwok-Wing; Chan, Ting-Fung; Leung, Kwong-Sak

2011-02-01

Sequencing reads generated by RNA-sequencing (RNA-seq) must first be mapped back to the genome through alignment before they can be further analyzed. Current fast and memory-saving short-read mappers could give us a quick view of the transcriptome. However, they are neither designed for reads that span across splice junctions nor for repetitive reads, which can be mapped to multiple locations in the genome (multi-reads). Here, we describe a new software package: ABMapper, which is specifically designed for exploring all putative locations of reads that are mapped to splice junctions or repetitive in nature. The software is freely available at: http://abmapper.sourceforge.net/. The software is written in C++ and PERL. It runs on all major platforms and operating systems including Windows, Mac OS X and LINUX.

Series array of highly hysteretic Josephson junctions coupled to a microstrip resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costabile, G.; Andreone, D.; Lacquaniti, V.

1985-07-15

We have tested a new device based on a 12 junction array coupled to a resonator. We have explored the feasibility of the phase lock for all the junctions at the same biasing current, which yields voltage quantization across each junction, eliminating the need to individually bias the junctions. The whole rf structure has been realized by stripline technology. The resonator is fed by a 50-..cap omega.. line and is decoupled from the dc circuit by elliptical low-pass filters inserted in the bias leads.

Characterization of Electrostatic Potential and Trapped Charge in Semiconductor Nanostructures using Off-Axis Electron Holography

NASA Astrophysics Data System (ADS)

Gan, Zhaofeng

Off-axis electron holography (EH) has been used to characterize electrostatic potential, active dopant concentrations and charge distribution in semiconductor nanostructures, including ZnO nanowires (NWs) and thin films, ZnTe thin films, Si NWs with axial p-n junctions, Si-Ge axial heterojunction NWs, and Ge/Li xGe core/shell NW. The mean inner potential (MIP) and inelastic mean free path (IMFP) of ZnO NWs have been measured to be 15.3V+/-0.2V and 55+/-3nm, respectively, for 200keV electrons. These values were then used to characterize the thickness of a ZnO nano-sheet and gave consistent values. The MIP and IMFP for ZnTe thin films were measured to be 13.7+/-0.6V and 46+/-2nm, respectively, for 200keV electrons. A thin film expected to have a p-n junction was studied, but no signal due to the junction was observed. The importance of dynamical effects was systematically studied using Bloch wave simulations. The built-in potentials in Si NWs across the doped p-n junction and the Schottky junction due to Au catalyst were measured to be 1.0+/-0.3V and 0.5+/-0.3V, respectively. Simulations indicated that the dopant concentrations were ~1019cm-3 for donors and ~1017 cm-3 for acceptors. The effects of positively charged Au catalyst, a possible n+-n --p junction transition region and possible surface charge, were also systematically studied using simulations. Si-Ge heterojunction NWs were studied. Dopant concentrations were extracted by atom probe tomography. The built-in potential offset was measured to be 0.4+/-0.2V, with the Ge side lower. Comparisons with simulations indicated that Ga present in the Si region was only partially activated. In situ EH biasing experiments combined with simulations indicated the B dopant in Ge was mostly activated but not the P dopant in Si. I-V characteristic curves were measured and explained using simulations. The Ge/LixGe core/shell structure was studied during lithiation. The MIP for LixGe decreased with time due to increased Li content. A model was proposed to explain the lower measured Ge potential, and the trapped electron density in Ge core was calculated to be 3x1018 electrons/cm3. The Li amount during lithiation was also calculated using MIP and volume ratio, indicating that it was lower than the fully lithiated phase.

Direct DC 10 V comparison between two programmable Josephson voltage standards made of niobium nitride (NbN)-based and niobium (Nb)-based Josephson junctions

NASA Astrophysics Data System (ADS)

Solve, S.; Chayramy, R.; Maruyama, M.; Urano, C.; Kaneko, N.-H.; Rüfenacht, A.

2018-04-01

BIPM’s new transportable programmable Josephson voltage standard (PJVS) has been used for an on-site comparison at the National Metrology Institute of Japan (NMIJ) and the National Institute of Advanced Industrial Science and Technology (AIST) (NMIJ/AIST, hereafter called just NMIJ unless otherwise noted). This is the first time that an array of niobium-based Josephson junctions with amorphous niobium silicon Nb x Si1-x barriers, developed by the National Institute of Standards and Technology4 (NIST), has been directly compared to an array of niobium nitride (NbN)-based junctions (developed by the NMIJ in collaboration with the Nanoelectronics Research Institute (NeRI), AIST). Nominally identical voltages produced by both systems agreed within 5 parts in 1012 (0.05 nV at 10 V) with a combined relative uncertainty of 7.9  ×  10-11 (0.79 nV). The low side of the NMIJ apparatus is, by design, referred to the ground potential. An analysis of the systematic errors due to the leakage current to ground was conducted for this ground configuration. The influence of a multi-stage low-pass filter installed at the output measurement leads of the NMIJ primary standard was also investigated. The number of capacitances in parallel in the filter and their insulation resistance have a direct impact on the amplitude of the systematic voltage error introduced by the leakage current, even if the current does not necessarily return to ground. The filtering of the output of the PJVS voltage leads has the positive consequence of protecting the array from external sources of noise. Current noise, when coupled to the array, reduces the width or current range of the quantized voltage steps. The voltage error induced by the leakage current in the filter is an order of magnitude larger than the voltage error in the absence of all filtering, even though the current range of steps is significantly decreased without filtering.

The Solar Array Photovoltaic Assembly for the INSAT 4CR Spacecraft Design, Development and In-Orbit Performance

NASA Astrophysics Data System (ADS)

Thomas, Joseph; Sudhakar, M.; Agarwal, Anil; Sankaran, M.; Mudramachary, P.

2008-09-01

The INSAT 4CR spacecraft, the third in the INSAT 4 series of Indian Space Research Organization (ISRO)'s Communication satellite program, is a high power communication satellite in Geo- stationary Earth Orbit (GEO), configured using the ISRO I2K bus. The primary power is provided by two-wing sun tracking, deployable solar array and the eclipse load requirement is supported by two 70 Ah nickel hydrogen batteries. The power output of the solar array is regulated by Sequential Switching Shunt Regulators to 42V±0.5V. The salient feature of the solar array design is that it uses the new generation multi junction solar cells for all the four panels of size 2.54m x 1.525m to meet the higher power requirement with the available array area. The solar panel fabrication process with the Advanced Triple Junction (ATJ) solar cells from M/s. EMCORE, USA, has been demonstrated for the GEO life cycle through qualification coupon fabrication and testing.This paper describes the INSAT 4CR solar array photovoltaic assemblies design, layout optimization and realization of the Flight Model (FM) panels. It focuses on the power generation prediction, electrical performance measurement under Large Area Pulsed Sun Simulator (LAPSS) and verification of the ground level test results. The indigenously built Geostationary Launch Vehicle (GSLV F04) has successfully launched the INSAT 4CR spacecraft into the orbit on September 2nd, 2007. This paper also presents the analysis of telemetry data to validate the initial phase in-orbit performance of the solar array with prediction.

Emission color-tuned light-emitting diode microarrays of nonpolar In xGa 1–xN/GaN multishell nanotube heterostructures

DOE PAGES

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung; ...

2015-12-09

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Young Joon; Lee, Chul -Ho; Yoo, Jinkyoung

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane In xGa 1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the In xGa 1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via themore » formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.« less

Quantum Error Correction with a Globally-Coupled Array of Neutral Atom Qubits

DTIC Science & Technology

2013-02-01

magneto - optical trap ) located at the center of the science cell. Fluorescence...Bottle beam trap GBA Gaussian beam array EMCCD electron multiplying charge coupled device microsec. microsecond MOT Magneto - optical trap QEC quantum error correction qubit quantum bit ...developed and implemented an array of neutral atom qubits in optical traps for studies of quantum error correction. At the end of the three year

The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, A. V., E-mail: ZhukovAndreyV@mail.ru

An algorithm for calculating the parameters of the electron–phonon interaction of the EL2 trap has been developed and implemented based on the example of GaAs. Using the obtained parameters, the field dependences of the probabilities of nonradiative transitions from the trap and reverse currents of the GaAs p–n junctions are calculated, which are in good agreement with the experimental data.

Analysis of astronomical data from optical superconducting tunnel junctions

NASA Astrophysics Data System (ADS)

de Bruijne, J. H.; Reynolds, A. P.; Perryman, Michael A.; Favata, Fabio; Peacock, Anthony J.

2002-06-01

Currently operating optical superconducting tunnel junction (STJ) detectors, developed at the European Space Agency (ESA), can simultaneously measure the wavelength ((Delta) (gamma) equals 50 nm at 500 nm) and arrival time (to within approximately 5 microsecond(s) ) of individual photons in the range 310 to 720 nm with an efficiency of approximately 70%, and with count rates of the order of 5000 photons s-1 per junction. A number of STJs placed in an array format generates 4-D data: photon arrival time, energy, and array element (X,Y). Such STJ cameras are ideally suited for, e.g., high-time-resolution spectrally resolved monitoring of variable sources or low- resolution spectroscopy of faint extragalactic objects. The reduction of STJ data involves detector efficiency correction, atmospheric extinction correction, sky background subtraction, and, unlike that of data from CCD-based systems, a more complex energy calibration, barycentric arrival time correction, energy range selection, and time binning; these steps are, in many respects, analogous to procedures followed in high-energy astrophysics. We discuss these calibration steps in detail using a representative observation of the cataclysmic variable UZ Fornacis; these data were obtained with ESA's S-Cam2 6 X 6-pixel device. We furthermore discuss issues related to telescope pointing and guiding, differential atmospheric refraction, and atmosphere-induced image motion and image smearing (`seeing') in the focal plane. We also present a simple and effective recipe for extracting the evolution of atmospheric seeing with time from any science exposure and discuss a number of caveats in the interpretation of STJ-based time-binned data, such as light curves and hardness ratio plots.

Massless Dirac fermions trapping in a quasi-one-dimensional n p n junction of a continuous graphene monolayer

NASA Astrophysics Data System (ADS)

Bai, Ke-Ke; Qiao, Jia-Bin; Jiang, Hua; Liu, Haiwen; He, Lin

2017-05-01

Massless Dirac fermions in graphene provide unprecedented opportunities to realize the Klein paradox, which is one of the most exotic and striking properties of relativistic particles. In the seminal theoretical work [M. I. Katsnelson et al., Nat. Phys. 2, 620 (2006), 10.1038/nphys384], it was predicted that the massless Dirac fermions can pass through one-dimensional (1D) potential barriers unimpededly at normal incidence. Such a result seems to preclude confinement of the massless Dirac fermions in graphene by using 1D potential barriers. Here, we demonstrate both experimentally and theoretically that massless Dirac fermions can be trapped in a quasi-1D n p n junction of a continuous graphene monolayer. Because of highly anisotropic transmission of the massless Dirac fermions at n-p junction boundaries (the so-called Klein tunneling in graphene), charge carriers incident at large oblique angles will be reflected from one edge of the junction with high probability and continue to bounce from the opposite edge. Consequently, these electrons are trapped for a finite time to form quasibound states in the quasi-1D n p n junction. The quasibound states seen as pronounced resonances are probed and the quantum interference patterns arising from these states are directly visualized in our scanning tunneling microscope measurements.

Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

PubMed

Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

2011-08-23

We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions

NASA Astrophysics Data System (ADS)

Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana

2015-09-01

We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (<0.65 eV) below conduction band with increasing thickness. Moreover, the observed hysteresis in I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Weicheng; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixedmore » conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.« less

NiO nanoparticles anchored on P-doped α-Fe2O3 nanoarrays: an efficient hole extraction p-n heterojunction photoanode for water oxidation.

PubMed

Li, Feng; Li, Jing; Zhang, Jie; Gao, Lili; Long, Xuefeng; Hu, Yiping; Li, Shuwen; Jin, Jun; Ma, Jiantai

2018-05-16

The photoelectrochemical (PEC) water splitting efficiency of hematite-based photoanode is still far from the theoretical value due to its poor surface reaction kinetics and high density of surface trapping states. To solve these drawbacks, a photoanode consisting of NiO nanoparticles anchored on a gradient P-doped α-Fe2O3 nanorod (NR) array (NiO/P-α-Fe2O3) was fabricated to achieve optimal light absorption and charge separation, and rapid surface reaction kinetic. Specifically, the photoanode with the NR arrays structure allowed high mass transport rate to be achieved while the P-doping effectively decreased surface trapping sites and improved the electrical conductivity of α-Fe2O3. Furthermore, the p-n junction formed between the NiO and P-α-Fe2O3 can further improve the PEC performance due to the efficient hole extraction property and water oxidization catalytic activity of NiO. Consequently, the NiO/P-α-Fe2O3 NR photoanode produced a high photocurrent density of 2.08 mA cm-2 at 1.23V vs. RHE and a 110 mV cathodic shift of the onset potential. This rational design of structure offers a new perspective in exploring high performance PEC photoanodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyagi, Manisha; Tomar, Monika; Gupta, Vinay, E-mail: drguptavinay@gmail.com

2015-06-15

Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V)more » characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.« less

Characterization of chromium compensated GaAs as an X-ray sensor material for charge-integrating pixel array detectors

NASA Astrophysics Data System (ADS)

Becker, J.; Tate, M. W.; Shanks, K. S.; Philipp, H. T.; Weiss, J. T.; Purohit, P.; Chamberlain, D.; Gruner, S. M.

2018-01-01

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and X-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

Invariant submanifold for series arrays of Josephson junctions.

PubMed

Marvel, Seth A; Strogatz, Steven H

2009-03-01

We study the nonlinear dynamics of series arrays of Josephson junctions in the large-N limit, where N is the number of junctions in the array. The junctions are assumed to be identical, overdamped, driven by a constant bias current, and globally coupled through a common load. Previous simulations of such arrays revealed that their dynamics are remarkably simple, hinting at the presence of some hidden symmetry or other structure. These observations were later explained by the discovery of N-3 constants of motion, the choice of which confines the resulting flow in phase space to a low-dimensional invariant manifold. Here we show that the dimensionality can be reduced further by restricting attention to a special family of states recently identified by Ott and Antonsen. In geometric terms, the Ott-Antonsen ansatz corresponds to an invariant submanifold of dimension one less than that found earlier. We derive and analyze the flow on this submanifold for two special cases: an array with purely resistive loading and another with resistive-inductive-capacitive loading. Our results recover (and in some instances improve) earlier findings based on linearization arguments.

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.

2002-01-01

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

NASA Astrophysics Data System (ADS)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Method of fabricating multiwavelength infrared focal plane array detector

NASA Technical Reports Server (NTRS)

Forrest, Stephen R. (Inventor); Olsen, Gregory H. (Inventor); Kim, Dong-Su (Inventor); Lange, Michael J. (Inventor)

1996-01-01

A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Multiwavelength infrared focal plane array detector

NASA Technical Reports Server (NTRS)

Forrest, Stephen R. (Inventor); Olsen, Gregory H. (Inventor); Kim, Dong-Su (Inventor); Lange, Michael J. (Inventor)

1995-01-01

A multiwavelength focal plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y<1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

Josephson-junction array in an irrational magnetic field: A superconducting glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halsey, T.C.

1985-08-26

A model is used to show that a Josephson junction array in an irrational magnetic field undergoes a glass transition for finite cooling rate. At zero temperature the resultant glassy state possesses a nonzero critical current. The low-temperature behavior of the system can be modeled by a spin-wave theory. The relevance of these results for real experiments on arrays is discussed.

Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n{sup +}-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inokuchi, Tomoaki, E-mail: tomoaki.inokuchi@toshiba.co.jp; Ishikawa, Mizue; Sugiyama, Hideyuki

2014-12-08

Spin-dependent transport properties in CoFe/MgO/n{sup +}-Si junctions were investigated by Hanle effect measurements and inelastic electron tunneling (IET) spectroscopy. The CoFe/MgO/n{sup +}-Si junctions examined in this study exhibited two different Hanle curves. In the low bias region, broad Hanle signals were mainly observed; in the high bias region, narrow Hanle signals were mainly observed. The d{sup 2}I/dV{sup 2}-V curves (which correspond to IET spectra) contain several peaks originating from phonon modes and other peaks originating from electron trap states. At the bias voltage where electron trap states are observed, Δd{sup 2}I/dV{sup 2} depends on the magnetic field and the fullmore » width at half-maximum of the Δd{sup 2}I/dV{sup 2}–H curves corresponds to that of the broad Hanle signals. These results indicate that electron trap states are located in the low energy region and cause a decrease in spin lifetime.« less

Anomalous light trapping enhancement in a two-dimensional gold nanobowl array with an amorphous silicon coating.

PubMed

Yang, Liu; Kou, Pengfei; He, Nan; Dai, Hao; He, Sailing

2017-06-26

A facile polymethyl methacrylate-assisted turnover-transfer approach is developed to fabricate uniform hexagonal gold nanobowl arrays. The bare array shows inferior light trapping ability compared to its inverted counterpart (a gold nanospherical shell array). Surprisingly, after being coated with a 60-nm thick amorphous silicon film, an anomalous light trapping enhancement is observed with a significantly enhanced average absorption (82%), while for the inverted nanostructure, the light trapping becomes greatly weakened with an average absorption of only 66%. Systematic experimental and theoretical results show that the main reason for the opposite light trapping behaviors lies in the top amorphous silicon coating, which plays an important role in mediating the excitation of surface plasmon polaritons and the electric field distributions in both nanostructures.

Self-assembled synthesis of 3D Cu(In1 - xGax)Se2 nanoarrays by one-step electroless deposition into ordered AAO template

NASA Astrophysics Data System (ADS)

Zhang, Bin; Zhou, Tao; Zheng, Maojun; Xiong, Zuzhou; Zhu, Changqing; Li, Hong; Wang, Faze; Ma, Li; Shen, Wenzhong

2014-07-01

Quaternary nanostructured Cu(In1 - xGax)Se2 (CIGS) arrays were successfully fabricated via a novel and simple solution-based protocol on the electroless deposition method, using a flexible, highly ordered anodic aluminium oxide (AAO) substrate. This method does not require electric power, complicated sensitization processes, or complexing agents, but provides nearly 100% pore fill factor to AAO templates. The field emission scanning electron microscopy (FE-SEM) images show that we obtained uniformly three-dimensional nanostructured CIGS arrays, and we can tailor the diameter and wall thicknesses of the nanostructure by adjusting the pore diameter of the AAO and metal Mo layer. Their chemical composition was determined by energy-dispersive spectroscopy analysis, which is very close to the stoichiometric value. The Raman spectroscopy, x-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) further confirm the formation of nanostructured CIGS with prominent chalcopyrite structure. The nanostructured CIGS arrays can support the design of low-cost, highlight-trapping, and enhanced carrier collection nanostructured solar cells.

Depth profile composition studies of thin film CdS:Cu2S solar cells using XPS and AES

NASA Astrophysics Data System (ADS)

Bhide, V. G.; Salkalachen, S.; Rastogi, A. C.; Rao, C. N. R.; Hegde, M. S.

1981-09-01

Studies of the surface composition and depth profiles of thin film CdS:Cu2S solar cells based on the techniques of X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are reported. Specimens were fabricated by the thermal deposition of polycrystalline CdS films onto silver-backed electrodes predeposited on window glass substrates, followed by texturization in hot HCl and chemical plating in a hot CuCl(I) bath for a few seconds to achieve the topotaxial growth of CuS films. The XPS and AES studies indicate the junction to be fairly diffused in the as-prepared cell, with heat treatment in air at 210 C sharpening the junction, improving the stoichiometry of the Cu2S layer and thus improving cell performance. The top copper sulfide layer is found to contain impurities such as Cd, Cl, O and C, which may be removed by mild Ar(+) ion beam etching. The presence of copper deep in the junction is invariably detected, apparently in the grain boundary region in the form of CuS or Cu(2+) trapped in the lattice. It is also noted that the nominal valence state of copper changes abruptly from Cu(+) to Cu(2+) across the junction.

A 380 GHz SIS receiver using Nb/AlO(x)/Nb junctions for a radioastronomical balloon-borne experiment: PRONAOS

NASA Technical Reports Server (NTRS)

Febvre, P.; Feautrier, P.; Robert, C.; Pernot, J. C.; Germont, A.; Hanus, M.; Maoli, R.; Gheudin, M.; Beaudin, G.; Encrenaz, P.

1992-01-01

The superheterodyne detection technique used for the spectrometer instrument of the PRONAOS project will provide a very high spectral resolution (delta nu/nu = 10(exp -6)). The most critical components are those located at the front-end of the receiver: their contribution dominates the total noise of the receiver. Therefore, it is important to perform accurate studies for specific components, such as mixers and multipliers working in the submillimeter wave range. Difficulties in generating enough local oscillator (LO) power at high frequencies make SIS mixers very desirable for operation above 300 GHz. The low LO power requirements and the low noise temperature of these mixers are the primary reason for building an SIS receiver. This paper reports the successful fabrication of small (less than or equal to 1 sq micron) Nb/Al-O(x)/Nb junctions and arrays with excellent I-V characteristics and very good reliability, resulting in a low noise receiver performance measured in the 368/380 GHz frequency range.

Multifluxon dynamics in driven Josephson junctions

NASA Astrophysics Data System (ADS)

Lawrence, Albert; Kim, Nung Soo; McDaniel, James; Jack, Michael

1985-06-01

The dynamics of fluxons in a long Josephson junction driven by time-varying nonuniform bias currents are described by a generalization of the sine-Gordon equation. This equation has solitary wave solutions which correspond to current vortices or quantized packets of magnetic flux in the junction. As with the sine-Gordon equation, multifluxon solutions may be demonstrated for the long Josephson junction. Our numerical calculations show that several fluxons may be launched or annihilated at the end of a junction. We also show multiple steady state conditions which correspond to one or more flux quanta trapped in the junction.

Screening charge localization at LiNbO{sub 3} surface with Schottky junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagata, Takahiro, E-mail: NAGATA.Takahiro@nims.go.jp; Chikyow, Toyohiro; Kitamura, Kenji

2016-04-25

Screening charge localization was demonstrated by using a Schottky contact with LiNbO{sub 3} (LN). A Cr/LN stack structure with a 2 μm diameter hole array penetrating the Cr layer localized the screening charge of LN in the hole, although the Al/LN stack structure exhibited no surface charge localization behavior. X-ray photoelectron spectroscopy revealed that Cr formed a Schottky contact with LN, which prevents the screening charge from escaping from the hole arrays. The screening charge localization was enhanced by inserting SiO{sub 2} between the metal and LN, which moved the position of the Fermi level to mid gap.

Large area low-cost space solar cell development

NASA Technical Reports Server (NTRS)

Baraona, C. R.; Cioni, J. L.

1982-01-01

A development program to produce large-area (5.9 x 5.9 cm) space quality silicon solar cells with a cost goal of 30 $/watt is descibed. Five cell types under investigation include wraparound dielectric, mechanical wraparound and conventional contact configurations with combinations of 2 or 10 ohm-cm resistivity, back surface reflectors and/or fields, and diffused or ion implanted junctions. A single step process to cut cell and cover-glass simultaneously is being developed. A description of cell developments by Applied Solar Energy Corp., Spectrolab and Spire is included. Results are given for cell and array tests, performed by Lockheed, TRW and NASA. Future large solar arrays that might use cells of this type are discussed.

DFT analysis and FDTD simulation of CH3NH3PbI3-x Cl x mixed halide perovskite solar cells: role of halide mixing and light trapping technique

NASA Astrophysics Data System (ADS)

Saffari, Mohaddeseh; Mohebpour, Mohammad Ali; Rahimpour Soleimani, H.; Bagheri Tagani, Meysam

2017-10-01

Since perovskite solar cells have attracted a great deal of attention over the past few years, the enhancement of their optical absorption and current density are among the basic upcoming challenges. For this reason, first, we have studied the structural and optical properties of organic-inorganic hybrid halide perovskite CH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-x Cl x in the cubic phase by using a density functional theory (DFT). Then, we model a single-junction perovskite solar cell based on a full solution to Maxwell’s equations, using a finite difference time domain (FDTD) technique, which helps us to investigate the light absorption efficiency and optical current density of the cell with CH3NH3PbI3-x Cl x (x  =  0, 1, 2, 3) as the active layer. The results suggest that increasing the amount of chlorine in CH3NH3PbI3-x Cl x compound leads to an increase in the bandgap energy, as well as a decrease in the lattice constants and optical properties, like the refractive index and extinction coefficient of the structure. Also, the results obtained by the simulation express that by taking advantage of the light trapping techniques of SiO2, a remarkable increase of light absorption will be achieved to the magnitude of 83.13%, which is noticeable.

Microscopy of biological sample through advanced diffractive optics from visible to X-ray wavelength regime.

PubMed

Di Fabrizio, Enzo; Cojoc, Dan; Emiliani, Valentina; Cabrini, Stefano; Coppey-Moisan, Maite; Ferrari, Enrico; Garbin, Valeria; Altissimo, Matteo

2004-11-01

The aim of this report is to demonstrate a unified version of microscopy through the use of advanced diffractive optics. The unified scheme derives from the technical possibility of realizing front wave engineering in a wide range of electromagnetic spectrum. The unified treatment is realized through the design and nanofabrication of phase diffractive elements (PDE) through which wave front beam shaping is obtained. In particular, we will show applications, by using biological samples, ranging from micromanipulation using optical tweezers to X-ray differential interference contrast (DIC) microscopy combined with X-ray fluorescence. We report some details on the design and physical implementation of diffractive elements that besides focusing also perform other optical functions: beam splitting, beam intensity, and phase redistribution or mode conversion. Laser beam splitting is used for multiple trapping and independent manipulation of micro-beads surrounding a cell as an array of tweezers and for arraying and sorting microscopic size biological samples. Another application is the Gauss to Laguerre-Gauss mode conversion, which allows for trapping and transfering orbital angular momentum of light to micro-particles immersed in a fluid. These experiments are performed in an inverted optical microscope coupled with an infrared laser beam and a spatial light modulator for diffractive optics implementation. High-resolution optics, fabricated by means of e-beam lithography, are demonstrated to control the intensity and the phase of the sheared beams in x-ray DIC microscopy. DIC experiments with phase objects reveal a dramatic increase in image contrast compared to bright-field x-ray microscopy. Besides the topographic information, fluorescence allows detection of certain chemical elements (Cl, P, Sc, K) in the same setup, by changing the photon energy of the x-ray beam. (c) 2005 Wiley-Liss, Inc.

X-ray Scintillation in Lead Halide Perovskite Crystals

PubMed Central

Birowosuto, M. D.; Cortecchia, D.; Drozdowski, W.; Brylew, K.; Lachmanski, W.; Bruno, A.; Soci, C.

2016-01-01

Current technologies for X-ray detection rely on scintillation from expensive inorganic crystals grown at high-temperature, which so far has hindered the development of large-area scintillator arrays. Thanks to the presence of heavy atoms, solution-grown hybrid lead halide perovskite single crystals exhibit short X-ray absorption length and excellent detection efficiency. Here we compare X-ray scintillator characteristics of three-dimensional (3D) MAPbI3 and MAPbBr3 and two-dimensional (2D) (EDBE)PbCl4 hybrid perovskite crystals. X-ray excited thermoluminescence measurements indicate the absence of deep traps and a very small density of shallow trap states, which lessens after-glow effects. All perovskite single crystals exhibit high X-ray excited luminescence yields of >120,000 photons/MeV at low temperature. Although thermal quenching is significant at room temperature, the large exciton binding energy of 2D (EDBE)PbCl4 significantly reduces thermal effects compared to 3D perovskites, and moderate light yield of 9,000 photons/MeV can be achieved even at room temperature. This highlights the potential of 2D metal halide perovskites for large-area and low-cost scintillator devices for medical, security and scientific applications. PMID:27849019

Breeding based remobilization of Tol2 transposon in Xenopus tropicalis.

PubMed

Lane, Maura A; Kimber, Megan; Khokha, Mustafa K

2013-01-01

Xenopus is a powerful model for studying a diverse array of biological processes. However, despite multiple methods for transgenesis, relatively few transgenic reporter lines are available and commonly used. Previous work has demonstrated that transposon based strategies are effective for generating transgenic lines in both invertebrate and vertebrate systems. Here we show that the Tol2 transposon can be remobilized in the genome of X. tropicalis and passed through the germline via a simple breeding strategy of crossing transposase expressing and transposon lines. This remobilization system provides another tool to exploit transgenesis and opens new opportunities for gene trap and enhancer trap strategies.

Comparison of measured and predicted performance of a SIS waveguide mixer at 345 GHz

NASA Technical Reports Server (NTRS)

Honingh, C. E.; Delange, G.; Dierichs, M. M. T. M.; Schaeffer, H. H. A.; Wezelman, J.; Vandekuur, J.; Degraauw, T.; Klapwijk, T. M.

1992-01-01

The measured gain and noise of a SIS waveguide mixer at 345 GHz have been compared with theoretical values, calculated from the quantum mixer theory using a three port model. As a mixing element, we use a series array of two Nb-Al2O3-Nb SIS junctions. The area of each junction is 0.8 sq microns and the normal state resistance is 52 omega. The embedding impedance of the mixer has been determined from the pumped DC-IV curves of the junction and is compared to results from scale model measurements (105 x). Good agreement was obtained. The measured mixer gain, however, is a factor of 0.45 plus or minus 0.5 lower than the theoretical predicted gain. The measured mixer noise temperature is a factor of 4-5 higher than the calculated one. These discrepancies are independent on pump power and are valid for a broad range of tuning conditions.

Primary thermometry with nanoscale tunnel junctions

NASA Astrophysics Data System (ADS)

Hirvi, K. P.; Kauppinen, J. P.; Paalanen, M. A.; Pekola, J. P.

1995-10-01

We have found current-voltage (I-V) and conductance (dI/dV) characteristics of arrays of nanoscale tunnel junctions between normal metal electrodes to exhibit suitable features for primary thermometry. The current through a uniform array depends on the ratio of the thermal energy kBT and the electrostatic charging energy E c of the islands between the junctions and is completely blocked by Coulomb repulsion at T = 0 and at small voltages eV/2 ≤ Ec. In the opposite limit, kBT ≫ Ec, the width of the conductance minimum scales linearly and universally with T and N, the number of tunnel junctions, and qualifies as a primary thermometer. The zero bias drop in the conductance is proportional to T-1 and can be used as a secondary thermometer. We will show with Monte Carlo simulations how background charge and nonuniformities of the array will affect the thermometer.

High Voltage Solar Concentrator Experiment with Implications for Future Space Missions

NASA Technical Reports Server (NTRS)

Mehdi, Ishaque S.; George, Patrick J.; O'Neill, Mark; Matson, Robert; Brockschmidt, Arthur

2004-01-01

This paper describes the design, development, fabrication, and test of a high performance, high voltage solar concentrator array. This assembly is believed to be the first ever terrestrial triple-junction-cell solar array rated at over 1 kW. The concentrator provides over 200 W/square meter power output at a nominal 600 Vdc while operating under terrestrial sunlight. Space-quality materials and fabrication techniques were used for the array, and the 3005 meter elevation installation below the Tropic of Cancer allowed testing as close as possible to space deployment without an actual launch. The array includes two concentrator modules, each with a 3 square meter aperture area. Each concentrator module uses a linear Fresnel lens to focus sunlight onto a photovoltaic receiver that uses 240 series-connected triple-junction solar cells. Operation of the two receivers in series can provide 1200 Vdc which would be adequate for the 'direct drive' of some ion engines or microwave transmitters in space. Lens aperture width is 84 cm and the cell active width is 3.2 cm, corresponding to a geometric concentration ratio of 26X. The evaluation includes the concentrator modules, the solar cells, and the materials and techniques used to attach the solar cells to the receiver heat sink. For terrestrial applications, a finned aluminum extrusion was used for the heat sink for the solar cells, maintaining a low cell temperature so that solar cell efficiency remains high.

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

NASA Technical Reports Server (NTRS)

Wolf, M.

1982-01-01

It was found that the Solarex metallization design and process selection should be modified to yield substantially higher output of the 10 cm x 10 cm cells, while the Westinghouse design is extremely close to the optimum. In addition, further attention to the Solarex pn junction and base high/low junction formation processes could be beneficial. For the future efficiency improvement, it was found that refinement of the various minority carrier lifetime measurement methods is needed, as well as considerably increased sophistication in the interpretation of the results of these methods. In addition, it was determined that further experimental investigation of the Auger lifetime is needed, to conclusively determine the Auger coefficients for the direct Auger recombination at high majority carrier concentrations.

Silicon-on-insulator multimode-interference waveguide-based arrayed optical tweezers (SMART) for two-dimensional microparticle trapping and manipulation.

PubMed

Lei, Ting; Poon, Andrew W

2013-01-28

We demonstrate two-dimensional optical trapping and manipulation of 1 μm and 2.2 μm polystyrene particles in an 18 μm-thick fluidic cell at a wavelength of 1565 nm using the recently proposed Silicon-on-insulator Multimode-interference (MMI) waveguide-based ARrayed optical Tweezers (SMART) technique. The key component is a 100 μm square-core silicon waveguide with mm length. By tuning the fiber-coupling position at the MMI waveguide input facet, we demonstrate various patterns of arrayed optical tweezers that enable optical trapping and manipulation of particles. We numerically simulate the physical mechanisms involved in the arrayed trap, including the optical force, the heat transfer and the thermal-induced microfluidic flow.

Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

PubMed

Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

2016-08-31

Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

Microfluidic droplet trapping array as nanoliter reactors for gas-liquid chemical reaction.

PubMed

Zhang, Qingquan; Zeng, Shaojiang; Qin, Jianhua; Lin, Bingcheng

2009-09-01

This article presents a simple method for trapping arrays of droplets relying on the designed microstructures of the microfluidic device, and this has been successfully used for parallel gas-liquid chemical reaction. In this approach, the trapping structure is composed of main channel, lateral channel and trapping region. Under a negative pressure, array droplets can be generated and trapped in the microstructure simultaneously, without the use of surfactant and the precise control of the flow velocity. By using a multi-layer microdevice containing the microstructures, single (pH gradient) and multiple gas-liquid reactions (metal ion-NH3 complex reaction) can be performed in array droplets through the transmembrane diffusion of the gas. The droplets with quantitative concentration gradient can be formed by only replacing the specific membrane. The established method is simple, robust and easy to operate, demonstrating the potential of this device for droplet-based high-throughput screening.

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Flip Chip Bonding of 68 x 68 MWIR LED Arrays

DTIC Science & Technology

2009-01-01

transmission of IR light through GaSb material varies between 5%–30% and depends on the type of substrate dopants (n- or p-type). Hence, for bottom...emission regions (8.9/16 monolayer’s (ml) InAs/GaSb) separated by (n InAs/GaSb super lattice grade)/(p+ GaSb) tunnel junctions. Graded super lattices were...flip chip bonding process. Besides four corner LED test pads, there are 296 bonding pads in the CMOS driver to bias each LED pixel independently. The

New type of multijunction thermopile IR detector

NASA Astrophysics Data System (ADS)

Sun, Tietun; Guo, Lihui

1996-09-01

A newly designed thin-film thermopile infrared detector, which as an absorption layer and a sensitive area on two sides are fabricated using integrated-circuit technology. The device uses a series-connected thermocouples array whose `hot' junction are supported on a thin Myler film of 1 - 3 micrometers thickness. By a special method of fasting the shadow mask, the thermopile with 48 Bi-Sb couples for 2 X 2 mm(superscript 2) area produces a responsivity of 50 - 70 V/W and relaxation time of about 70 ms.

Trapping and Collection of Lymphocytes Using Microspot Array Chip and Magnetic Beads

NASA Astrophysics Data System (ADS)

Hashioka, Shingi; Obata, Tsutomu; Tokimitsu, Yoshiharu; Fujiki, Satoshi; Nakazato, Hiroyoshi; Muraguchi, Atsushi; Kishi, Hiroyuki; Tanino, Katsumi

2006-04-01

A microspot array chip, which has microspots of a magnetic thin film patterned on a glass substrate, was fabricated for trapping individual cells and for measuring their cellular response. The chip was easily fabricated by conventional semiconductor fabrication techniques on a mass production level as a disposable medical device. When a solution of lymphocyte-bound-magnetic beads was poured into the magnetized chip, each lymphocyte was trapped on each microspot of the magnetic thin film. The trapped cells were easily recovered from the chip using a micromanipulator. The micro-spot array chip can be utilized for arraying live cells and for measuring the response of each cell. The chip will be useful for preparing on array of different kinds of cells and for analyzing cellular response at the single cell level. The chip will be particularly useful for detecting antigen-specific B-lymphocytes and antigen-specific antibody complementary deoxyribonucleic acid (cDNA).

Understanding Light Harvesting in Radial Junction Amorphous Silicon Thin Film Solar Cells

PubMed Central

Yu, Linwei; Misra, Soumyadeep; Wang, Junzhuan; Qian, Shengyi; Foldyna, Martin; Xu, Jun; Shi, Yi; Johnson, Erik; Cabarrocas, Pere Roca i

2014-01-01

The radial junction (RJ) architecture has proven beneficial for the design of a new generation of high performance thin film photovoltaics. We herein carry out a comprehensive modeling of the light in-coupling, propagation and absorption profile within RJ thin film cells based on an accurate set of material properties extracted from spectroscopic ellipsometry measurements. This has enabled us to understand and evaluate the impact of varying several key parameters on the light harvesting in radially formed thin film solar cells. We found that the resonance mode absorption and antenna-like light in-coupling behavior in the RJ cell cavity can lead to a unique absorption distribution in the absorber that is very different from the situation expected in a planar thin film cell, and that has to be taken into account in the design of high performance RJ thin film solar cells. When compared to the experimental EQE response of real RJ solar cells, this modeling also provides an insightful and powerful tool to resolve the wavelength-dependent contributions arising from individual RJ units and/or from strong light trapping due to the presence of the RJ cell array. PMID:24619197

Progress toward the development of dual junction GaAs/Ge solar cells

NASA Technical Reports Server (NTRS)

Lillington, D. R.; Krut, D. D.; Cavicchi, B. T.; Ralph, E.; Chung, M.

1991-01-01

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Block-Cell-Printing for live single-cell printing

PubMed Central

Zhang, Kai; Chou, Chao-Kai; Xia, Xiaofeng; Hung, Mien-Chie; Qin, Lidong

2014-01-01

A unique live-cell printing technique, termed “Block-Cell-Printing” (BloC-Printing), allows for convenient, precise, multiplexed, and high-throughput printing of functional single-cell arrays. Adapted from woodblock printing techniques, the approach employs microfluidic arrays of hook-shaped traps to hold cells at designated positions and directly transfer the anchored cells onto various substrates. BloC-Printing has a minimum turnaround time of 0.5 h, a maximum resolution of 5 µm, close to 100% cell viability, the ability to handle multiple cell types, and efficiently construct protrusion-connected single-cell arrays. The approach enables the large-scale formation of heterotypic cell pairs with controlled morphology and allows for material transport through gap junction intercellular communication. When six types of breast cancer cells are allowed to extend membrane protrusions in the BloC-Printing device for 3 h, multiple biophysical characteristics of cells—including the protrusion percentage, extension rate, and cell length—are easily quantified and found to correlate well with their migration levels. In light of this discovery, BloC-Printing may serve as a rapid and high-throughput cell protrusion characterization tool to measure the invasion and migration capability of cancer cells. Furthermore, primary neurons are also compatible with BloC-Printing. PMID:24516129

Creation of ultra-high energy density matter using nanostructured targets

NASA Astrophysics Data System (ADS)

Tommasini, Riccardo; Park, J.; London, R.; Chen, H.; Hollinger, R. C.; Bargsten, C.; Shlyaptsev, V.; Capeluto, M.; Keiss, D.; Townsend, A.; Rocca, J. J.; Kaymak, V.; Pukhov, A.; Hill, M.

2015-11-01

Recent experiments have demonstrated that trapping of 60 femtosecond laser pulses of relativistic intensity deep within ordered nanowire arrays can create a new ultra-hot plasma regime. Here we report on the experiments at the Titan laser at the Lawrence Livermore National Laboratory that aim to scale these results by two orders of magnitude in laser energy. Preliminary analysis of the Titan results show that sub-picosecond laser irradiation of vertically aligned nanostructures of Au, Ag and Ni produces an increase of a factor greater than 1.6 in the suprathermal electron temperatures and an increase by a factor of 3 in the conversion efficiency into continuum x-rays, both with respect to flat targets of the same composition. Kα radiation from nanowire array targets also shows an increase between 3x and 5x over flat targets. The nanowire array targets reflected a 5x smaller fraction of the laser energy, indicating significantly larger absorption of the laser pulse. This work performed under the auspices of the U. S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344, by the Office of Fusion Energy Sciences, U.S Department of Energy, and by the Defense Threat Reduction Agency grant HDTRA-1-10-1-0079.

Stoichiometric requirements for trapping and gating of Ca2+ release-activated Ca2+ (CRAC) channels by stromal interaction molecule 1 (STIM1).

PubMed

Hoover, Paul J; Lewis, Richard S

2011-08-09

Store-operated Ca(2+) entry depends critically on physical interactions of the endoplasmic reticulum (ER) Ca(2+) sensor stromal interaction molecule 1 (STIM1) and the Ca(2+) release-activated Ca(2+) (CRAC) channel protein Orai1. Recent studies support a diffusion-trap mechanism in which ER Ca(2+) depletion causes STIM1 to accumulate at ER-plasma membrane (PM) junctions, where it binds to Orai1, trapping and activating mobile CRAC channels in the overlying PM. To determine the stoichiometric requirements for CRAC channel trapping and activation, we expressed mCherry-STIM1 and Orai1-GFP at varying ratios in HEK cells and quantified CRAC current (I(CRAC)) activation and the STIM1:Orai1 ratio at ER-PM junctions after store depletion. By competing for a limited amount of STIM1, high levels of Orai1 reduced the junctional STIM1:Orai1 ratio to a lower limit of 0.3-0.6, indicating that binding of one to two STIM1s is sufficient to immobilize the tetrameric CRAC channel at ER-PM junctions. In cells expressing a constant amount of STIM1, CRAC current was a highly nonlinear bell-shaped function of Orai1 expression and the minimum stoichiometry for channel trapping failed to evoke significant activation. Peak current occurred at a ratio of ∼2 STIM1:Orai1, suggesting that maximal CRAC channel activity requires binding of eight STIM1s to each channel. Further increases in Orai1 caused channel activity and fast Ca(2+)-dependent inactivation to decline in parallel. The data are well described by a model in which STIM1 binds to Orai1 with negative cooperativity and channels open with positive cooperativity as a result of stabilization of the open state by STIM1.

Conformational trapping of mismatch recognition complex MSH2/MSH3 on repair-resistant DNA loops.

PubMed

Lang, Walter H; Coats, Julie E; Majka, Jerzy; Hura, Greg L; Lin, Yuyen; Rasnik, Ivan; McMurray, Cynthia T

2011-10-18

Insertion and deletion of small heteroduplex loops are common mutations in DNA, but why some loops are prone to mutation and others are efficiently repaired is unknown. Here we report that the mismatch recognition complex, MSH2/MSH3, discriminates between a repair-competent and a repair-resistant loop by sensing the conformational dynamics of their junctions. MSH2/MSH3 binds, bends, and dissociates from repair-competent loops to signal downstream repair. Repair-resistant Cytosine-Adenine-Guanine (CAG) loops adopt a unique DNA junction that traps nucleotide-bound MSH2/MSH3, and inhibits its dissociation from the DNA. We envision that junction dynamics is an active participant and a conformational regulator of repair signaling, and governs whether a loop is removed by MSH2/MSH3 or escapes to become a precursor for mutation.

Unexpected trapping of particles at a T junction.

PubMed

Vigolo, Daniele; Radl, Stefan; Stone, Howard A

2014-04-01

A common element in physiological flow networks, as well as most domestic and industrial piping systems, is a T junction that splits the flow into two nearly symmetric streams. It is reasonable to assume that any particles suspended in a fluid that enters the bifurcation will leave it with the fluid. Here we report experimental evidence and a theoretical description of a trapping mechanism for low-density particles in steady and pulsatile flows through T-shaped junctions. This mechanism induces accumulation of particles, which can form stable chains, or give rise to significant growth of bubbles due to coalescence. In particular, low-density material dispersed in the continuous phase fluid interacts with a vortical flow that develops at the T junction. As a result suspended particles can enter the vortices and, for a wide range of common flow conditions, the particles do not leave the bifurcation. Via 3D numerical simulations and a model of the two-phase flow we predict the location of particle accumulation, which is in excellent agreement with experimental data. We identify experimentally, as well as confirm by numerical simulations and a simple force balance, that there is a wide parameter space in which this phenomenon occurs. The trapping effect is expected to be important for the design of particle separation and fractionation devices, as well as used for better understanding of system failures in piping networks relevant to industry and physiology.

Unexpected trapping of particles at a T junction

PubMed Central

Vigolo, Daniele; Radl, Stefan; Stone, Howard A.

2014-01-01

A common element in physiological flow networks, as well as most domestic and industrial piping systems, is a T junction that splits the flow into two nearly symmetric streams. It is reasonable to assume that any particles suspended in a fluid that enters the bifurcation will leave it with the fluid. Here we report experimental evidence and a theoretical description of a trapping mechanism for low-density particles in steady and pulsatile flows through T-shaped junctions. This mechanism induces accumulation of particles, which can form stable chains, or give rise to significant growth of bubbles due to coalescence. In particular, low-density material dispersed in the continuous phase fluid interacts with a vortical flow that develops at the T junction. As a result suspended particles can enter the vortices and, for a wide range of common flow conditions, the particles do not leave the bifurcation. Via 3D numerical simulations and a model of the two-phase flow we predict the location of particle accumulation, which is in excellent agreement with experimental data. We identify experimentally, as well as confirm by numerical simulations and a simple force balance, that there is a wide parameter space in which this phenomenon occurs. The trapping effect is expected to be important for the design of particle separation and fractionation devices, as well as used for better understanding of system failures in piping networks relevant to industry and physiology. PMID:24639547

Advanced solar panel designs

NASA Technical Reports Server (NTRS)

Ralph, E. L.; Linder, E.

1995-01-01

This paper describes solar cell panel designs that utilize new hgih efficiency solar cells along with lightweight rigid panel technology. The resulting designs push the W/kg and W/sq m parameters to new high levels. These new designs are well suited to meet the demand for higher performance small satellites. This paper reports on progress made on two SBIR Phase 1 contracts. One panel design involved the use of large area (5.5 cm x 6.5 cm) GaAs/Ge solar cells of 19% efficiency combined with a lightweight rigid graphite fiber epoxy isogrid substrate configuration. A coupon (38 cm x 38 cm) was fabricated and tested which demonstrated an array specific power level of 60 W/kg with a potential of reaching 80 W/kg. The second panel design involved the use of newly developed high efficiency (22%) dual junction GaInP2/GaAs/Ge solar cells combined with an advanced lightweight rigid substrate using aluminum honeycomb core with high strength graphite fiber mesh facesheets. A coupon (38 cm x 38 cm) was fabricated and tested which demonstrated an array specific power of 105 W/kg and 230 W/sq m. This paper will address the construction details of the panels and an a analysis of the component weights. A strawman array design suitable for a typical small-sat mission is described for each of the two panel design technologies being studied. Benefits in respect to weight reduction, area reduction, and system cost reduction are analyzed and compared to conventional arrays.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Capture and X-ray diffraction studies of protein microcrystals in a microfluidic trap array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyubimov, Artem Y.; Stanford University, Stanford, CA 94305; Stanford University, Stanford, CA 94305

A microfluidic platform has been developed for the capture and X-ray analysis of protein microcrystals, affording a means to improve the efficiency of XFEL and synchrotron experiments. X-ray free-electron lasers (XFELs) promise to enable the collection of interpretable diffraction data from samples that are refractory to data collection at synchrotron sources. At present, however, more efficient sample-delivery methods that minimize the consumption of microcrystalline material are needed to allow the application of XFEL sources to a wide range of challenging structural targets of biological importance. Here, a microfluidic chip is presented in which microcrystals can be captured at fixed, addressablemore » points in a trap array from a small volume (<10 µl) of a pre-existing slurry grown off-chip. The device can be mounted on a standard goniostat for conducting diffraction experiments at room temperature without the need for flash-cooling. Proof-of-principle tests with a model system (hen egg-white lysozyme) demonstrated the high efficiency of the microfluidic approach for crystal harvesting, permitting the collection of sufficient data from only 265 single-crystal still images to permit determination and refinement of the structure of the protein. This work shows that microfluidic capture devices can be readily used to facilitate data collection from protein microcrystals grown in traditional laboratory formats, enabling analysis when cryopreservation is problematic or when only small numbers of crystals are available. Such microfluidic capture devices may also be useful for data collection at synchrotron sources.« less

Thermal depinning of a single superconducting vortex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sok, Junghyun

1995-06-19

Thermal depinning has been studied for a single vortex trapped in a superconducting thin film in order to determine the value of the superconducting order parameter and the superfluid density when the vortex depins and starts to move around the film. For the Pb film in Pb/Al/Al 2O 3/PbBi junction having a gold line, the vortex depins from the artificial pinning site (Au line) and reproducibly moves through the same sequence of other pinning sites before it leaves the junction area of the Pb film. Values of the normalized order parameter Δ/Δ ° vary from Δ/Δ °=0.20 at the firstmore » motion of the vortex to Δ/Δ °=0.16 where the vortex finally leaves the junction. Equivalently, the value of the normalized superfluid density changes from 4% to 2.5% for this sample in this same temperature interval. For the Nb film in Nb/Al/Al 2O 3/Nb junction, thermal depinning occurs when the value of Δ/Δ ° is approximately 0.22 and the value of ρ s/ρ so is approximately 5%. These values are about 20% larger than those of a Pb sample having a gold line, but the values are really very close. For the Nb sample, grain boundaries are important pinning sites whereas, for the Pb sample with a gold line, pinning may have been dominated by an array Pb 3AU precipitates. Because roughly the same answer was obtained for these rather different kinds of pinning site, there is a reasonable chance that this is a general value within factors of 2 for a wide range of materials.« less

Vortex motion and dynamical states in Josephson arrays

NASA Astrophysics Data System (ADS)

Trias, Enrique

Underdamped Josephson junction arrays are used as model systems to study novel nonlinear effects. A combination of experiments, numerical simulations, and analytical analysis is used to probe different nonlinear behavior such as intrinsic localized modes, resonances in fully frustrated arrays, Meissner-like states, and vortex ratchets. Circuit models of Josephson networks are also developed, and applied to the design and measurement of parallel array oscillators. Ladder arrays have been used for an experimental study of intrinsic localized modes, or discrete breathers. Measurements of breather stability indicate that the maximum allowable bias current is proportional to the array depinning current while the minimum current is related to a junction retrapping mechanism. This retrapping instability usually leads to the formation of multi-site breathers. Collisions between the two nonlinear excitations in ladder arrays, discrete breathers and vortices, have also been numerically investigated. Discrete breathers act as pinning centers to vortex motion and the collisions can be modeled by an energy barrier activation process. When vortices are thermally induced over this barrier, a two-site breather is created. Experiments also reveal remarkable similarities among the do current-voltage characteristics of several kinds of square and triangular arrays, where two resonant voltages are observed. Simulations indicate that at full frustration a dynamical checkerboard state underlies these similarities. For such a traveling solution, the governing equations of the arrays are reduced to three coupled pendulum equations that have two characteristic resonant frequencies. Finally, a kink ratchet potential has been designed using a parallel array of Josephson junctions with alternating cell inductances and junctions areas. Experiments show that the depinning current depends on the direction of the applied current. Other properties of the depinning current versus applied field, such as a long period and a lack of reflection symmetry, have been observed and explained analytically. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139- 4307. Ph. 617-253-5668; Fax 617-253-1690.)

Automated array assembly, phase 2

NASA Technical Reports Server (NTRS)

Carbajal, B. G.

1979-01-01

Tasks of scaling up the tandem junction cell (TJC) from 2 cm x 2 cm to 6.2 cm and the assembly of several modules using these large area TJC's are described. The scale-up of the TJC was based on using the existing process and doing the necessary design activities to increase the cell area to an acceptably large area. The design was carried out using available device models. The design was verified and sample large area TJCs were fabricated. Mechanical and process problems occurred causing a schedule slippage that resulted in contract expiration before enough large-area TJCs were fabricated to populate the sample tandem junction modules (TJM). A TJM design was carried out in which the module interconnects served to augment the current collecting buses on the cell. No sample TJMs were assembled due to a shortage of large-area TJCs.

Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions.

PubMed

Wang, C D; Jha, S K; Chen, Z H; Ng, T W; Liu, Y K; Yuen, M F; Lu, Z Z; Kwok, S Y; Zapien, J A; Bello, I; Lee, C S; Zhang, W J

2012-06-01

Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at +/- 4 V and a small reverse leakage current approximately 1 microA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory.

Conformation-driven quantum interference effects mediated by through-space conjugation in self-assembled monolayers

NASA Astrophysics Data System (ADS)

Carlotti, Marco; Kovalchuk, Andrii; Wächter, Tobias; Qiu, Xinkai; Zharnikov, Michael; Chiechi, Ryan C.

2016-12-01

Tunnelling currents through tunnelling junctions comprising molecules with cross-conjugation are markedly lower than for their linearly conjugated analogues. This effect has been shown experimentally and theoretically to arise from destructive quantum interference, which is understood to be an intrinsic, electronic property of molecules. Here we show experimental evidence of conformation-driven interference effects by examining through-space conjugation in which π-conjugated fragments are arranged face-on or edge-on in sufficiently close proximity to interact through space. Observing these effects in the latter requires trapping molecules in a non-equilibrium conformation closely resembling the X-ray crystal structure, which we accomplish using self-assembled monolayers to construct bottom-up, large-area tunnelling junctions. In contrast, interference effects are completely absent in zero-bias simulations on the equilibrium, gas-phase conformation, establishing through-space conjugation as both of fundamental interest and as a potential tool for tuning tunnelling charge-transport in large-area, solid-state molecular-electronic devices.

Controllable picoliter pipetting using hydrophobic microfluidic valves

NASA Astrophysics Data System (ADS)

Zhang, M.; Huang, J.; Qian, X.; Mi, S.; Wang, X.

2017-06-01

A picoliter pipetting technique using the microfluidic method is presented. Utilizing the hydrophobic self-assembled monolayer films patterned in microchannels as pressure-controlled valves, a small volume of liquid can be separated by a designed channel trap and then ejected from the channel end at a higher pressure. The liquid trap section is composed of a T-shaped channel junction and a hydrophobic patch. The liquid volume can be precisely controlled by varying the distance of the hydrophobic patch from the T-junction. By this means, liquid less than 100 pl can be separated and pipetted. The developed device is potentially useful for sample dispensing in biological, medical, and chemical applications.

Berberine potentizes apoptosis induced by X-rays irradiation probably through modulation of gap junctions.

PubMed

Liu, Bing; Wang, Qin; Yuan, Dong-dong; Hong, Xiao-ting; Tao, Liang

2011-04-01

Clinical combination of some traditional Chinese medical herbs, including berberine, with irradiation is demonstrated to improve efficacy of tumor radiotherapy, yet the mechanisms for such effect remain largely unknown. The present study investigated the effect of berberine on apoptosis induced by X-rays irradiation and the relation between this effect and gap junction intercellular communication (GJIC). The role of gap junctions in the modulation of X-rays irradiation-induced apoptosis was explored by manipulation of connexin (Cx) expression, and gap junction function, using oleamide, a GJIC inhibitor, and berberine. In transfected HeLa cells, Cx32 expression increased apoptosis induced by X-rays irradiation, while inhibition of gap junction by oleamide reduced the irradiation responses, indicating the dependence of X-rays irradiation-induced apoptosis on GJIC. Berberine, at the concentrations without cytotoxicity, enhanced apoptosis induced by irradiation only in the presence of functional gap junctions. These results suggest that berberine potentizes cell apoptosis induced by X-rays irradiation, probably through enhancement of gap junction activity.

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman; Payson, J. S.; Li, Yang; Woodyard, James R.

1990-01-01

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Distributed Read-out Imaging Device array for astronomical observations in UV/VIS

NASA Astrophysics Data System (ADS)

Hijmering, Richard A.

2009-12-01

STJ (Superconducting Tunneling Junctions) are being developed as spectro-photometers in wavelengths ranging from the NIR to X-rays. 10x12 arrays of STJs have already been successfully used as optical imaging spectrometers with the S-Cam 3, on the William Hershel Telescope on La Palma and on the Optical Ground Station on Tenerife. To overcome the limited field of view which can be achieved with single STJ arrays, DROIDS (Distributed Read Out Imaging Devices) are being developed which produce next to energy and timing also produce positional information with each detector element. These DROIDS consist of a superconducting absorber strip with proximized STJs on either end. The STJs are a Ta/Al/AlOx/Al/Ta 100/30/1/30/100nm sandwich of which the bottom electrode Ta layer is one with the 100nm thick absorber layer. The ratio of the two signals from the STJs provides information on the absorption position and the sum signal is a measure for the energy of the absorbed photon. In this thesis we present different important processes which are involved with the detection of optical photons using DROIDs. This includes the spatial and spectral resolution, confinement of the quasiparticles in the proximized STJs to enhance tunnelling and quasiparticle creation resulting from absorption of a photon in the proximized STJ. We have combined our findings in the development of a 2D theoretical model which describes the diffusion of quasiparticles and imperfect confinement via exchange of quasiparticles between the absorber and STJ. Finally we will present some of the first results obtained with an array of 60 360x33.5 μm2 DROIDs in 3x20 format.

Characterization of NbN films and tunnel junctions

NASA Technical Reports Server (NTRS)

Stern, J. A.; Leduc, H. G.

1991-01-01

Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.

Near-field multiple traps of paraxial acoustic vortices with strengthened gradient force generated by sector transducer array

NASA Astrophysics Data System (ADS)

Wang, Qingdong; Li, Yuzhi; Ma, Qingyu; Guo, Gepu; Tu, Juan; Zhang, Dong

2018-01-01

In order to improve the capability of particle trapping close to the source plane, theoretical and experimental studies on near-field multiple traps of paraxial acoustic vortices (AVs) with a strengthened acoustic gradient force (AGF) generated by a sector transducer array were conducted. By applying the integration of point source radiation, numerical simulations for the acoustic fields generated by the sector transducer array were conducted and compared with those produced by the circular transducer array. It was proved that strengthened AGFs of near-field multiple AVs with higher peak pressures and smaller vortex radii could be produced by the sector transducer array with a small topological charge. The axial distributions of the equivalent potential gradient indicated that the AGFs of paraxial AVs in the near field were much higher than those in the far field, and the distances at the near-field vortex antinodes were also proved to be the ideal trapping positions with relatively higher AGFs. With the established 8-channel AV generation system, theoretical studies were also verified by the experimental measurements of pressure and phase for AVs with various topological charges. The formation of near-field multiple paraxial AVs was verified by the cross-sectional circular pressure distributions with perfect phase spirals around central pressure nulls, and was also proved by the vortex nodes and antinodes along the center axis. The favorable results demonstrated the feasibility of generating near-field multiple traps of paraxial AVs with strengthened AGF using the sector transducer array, and suggested the potential applications of close-range particle trapping in biomedical engineering.

Suppressing Loss of Ions in an Atomic Clock

NASA Technical Reports Server (NTRS)

Prestage, John; Chung, Sang

2010-01-01

An improvement has been made in the design of a compact, highly stable mercury- ion clock to suppress a loss of ions as they are transferred between the quadrupole and higher multipole ion traps. Such clocks are being developed for use aboard spacecraft for navigation and planetary radio science. The modification is also applicable to ion clocks operating on Earth: indeed, the success of the modification has been demonstrated in construction and operation of a terrestrial breadboard prototype of the compact, highly stable mercury-ion clock. Selected aspects of the breadboard prototype at different stages of development were described in previous NASA Tech Briefs articles. The following background information is reviewed from previous articles: In this clock as in some prior ion clocks, mercury ions are shuttled between two ion traps, one a 16- pole linear radio-frequency trap, while the other is a quadrupole radio-frequency trap. In the quadrupole trap, ions are tightly confined and optical state selection from a 202Hg lamp is carried out. In the 16-pole trap, the ions are more loosely confined and atomic transitions are interrogated by use of a microwave beam at approximately 40.507 GHz. The trapping of ions effectively eliminates the frequency pulling that would otherwise be caused by collisions between clock atoms and the wall of a gas cell. The shuttling of the ions between the two traps enables separation of the state-selection process from the clock microwave-resonance process, so that each of these processes can be optimized independently of the other. This is similar to the operation of an atomic beam clock, except that with ions the beam can be halted and reversed as ions are shuttled back and forth between the two traps. When the two traps are driven at the same radio frequency, the strength of confinement can be reduced near the junction between the two traps, depending upon the relative phase of the RF voltage used to operate each of the two traps, and can cause loss of ions during each transit between the traps and thereby cause loss of the 40.507-GHz ion-clock resonance signal. The essence of the modification is to drive the two traps at different frequencies typically between 1.5 and 2 MHz for the quadrupole trap and a frequency a few hundred kHz higher for the 16- pole trap. A frequency difference of a few hundred kHz ensures that the ion motion caused by the trapping electric fields is small relative to the diameter of the traps. Unlike in the case in which both traps are driven at the same frequency, the trapping electric fields near the junction are not zero at all times; instead, the regions of low electric field near the junction open and close at the difference frequency. An additional benefit of making the 16-pole trap operate at higher frequency is that the strength or depth of the multipole trap can be increased independent of the quadrupole ion trap.

Array of Josephson junctions with a nonsinusoidal current-phase relation as a model of the resistive transition of unconventional superconductors

NASA Astrophysics Data System (ADS)

Carbone, Anna; Gilli, Marco; Mazzetti, Piero; Ponta, Linda

2010-12-01

An array of resistively and capacitively shunted Josephson junctions with nonsinusoidal current-phase relation is considered for modeling the transition in high-Tc superconductors. The emergence of higher harmonics, besides the simple sinusoid Ic sin ϕ, is expected for dominant d-wave symmetry of the Cooper pairs, random distribution of potential drops, dirty grains, or nonstationary conditions. We show that additional cosine and sine terms act, respectively, by modulating the global resistance and by changing the Josephson coupling of the mixed superconductive-normal states. First, the approach is applied to simulate the transition in disordered granular superconductors with the weak-links characterized by nonsinusoidal current-phase relation. In granular superconductors, the emergence of higher-order harmonics affects the slope of the transition. Then, arrays of intrinsic Josephson junctions, naturally formed by the CuO2 planes in cuprates, are considered. The critical temperature suppression, observed at values of hole doping close to p =1/8, is investigated. Such suppression, related to the sign change and modulation of the Josephson coupling across the array, is quantified in terms of the intensities of the first and second sinusoids of the current-phase relation. Applications are envisaged for the design and control of quantum devices based on stacks of intrinsic Josephson junctions.

Switching Dynamics of an Underdamped Josephson Junction Coupled to a Microwave Cavity

NASA Astrophysics Data System (ADS)

Oelsner, G.; Il'ichev, E.

2018-05-01

Current-biased Josephson junctions are promising candidates for the detection of single photons in the microwave frequency domain. With modern fabrication technologies, the switching properties of the junction can be adjusted to achieve quantum limited sensitivity. Namely, the width of the switching current distribution can be reduced well below the current amplitude produced by a single photon trapped inside a superconducting cavity. However, for an effective detection a strong junction cavity coupling is required, providing nonlinear system dynamics. We compare experimental findings for our prototype device with a theoretical analysis aimed to describe the switching dynamics of junctions under microwave irradiation. Measurements are found in qualitative agreement with our simulations.

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Capture and X-ray diffraction studies of protein microcrystals in a microfluidic trap array

DOE PAGES

Lyubimov, Artem Y.; Murray, Thomas D.; Koehl, Antoine; ...

2015-03-27

X-ray free-electron lasers (XFELs) promise to enable the collection of interpretable diffraction data from samples that are refractory to data collection at synchrotron sources. At present, however, more efficient sample-delivery methods that minimize the consumption of microcrystalline material are needed to allow the application of XFEL sources to a wide range of challenging structural targets of biological importance. Here, a microfluidic chip is presented in which microcrystals can be captured at fixed, addressable points in a trap array from a small volume (<10 µl) of a pre-existing slurry grown off-chip. The device can be mounted on a standard goniostat formore » conducting diffraction experiments at room temperature without the need for flash-cooling. Proof-of-principle tests with a model system (hen egg-white lysozyme) demonstrated the high efficiency of the microfluidic approach for crystal harvesting, permitting the collection of sufficient data from only 265 single-crystal still images to permit determination and refinement of the structure of the protein. This work shows that microfluidic capture devices can be readily used to facilitate data collection from protein microcrystals grown in traditional laboratory formats, enabling analysis when cryopreservation is problematic or when only small numbers of crystals are available. Such microfluidic capture devices may also be useful for data collection at synchrotron sources.« less

Capture and X-ray diffraction studies of protein microcrystals in a microfluidic trap array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyubimov, Artem Y.; Murray, Thomas D.; Koehl, Antoine

X-ray free-electron lasers (XFELs) promise to enable the collection of interpretable diffraction data from samples that are refractory to data collection at synchrotron sources. At present, however, more efficient sample-delivery methods that minimize the consumption of microcrystalline material are needed to allow the application of XFEL sources to a wide range of challenging structural targets of biological importance. Here, a microfluidic chip is presented in which microcrystals can be captured at fixed, addressable points in a trap array from a small volume (<10 µl) of a pre-existing slurry grown off-chip. The device can be mounted on a standard goniostat formore » conducting diffraction experiments at room temperature without the need for flash-cooling. Proof-of-principle tests with a model system (hen egg-white lysozyme) demonstrated the high efficiency of the microfluidic approach for crystal harvesting, permitting the collection of sufficient data from only 265 single-crystal still images to permit determination and refinement of the structure of the protein. This work shows that microfluidic capture devices can be readily used to facilitate data collection from protein microcrystals grown in traditional laboratory formats, enabling analysis when cryopreservation is problematic or when only small numbers of crystals are available. Such microfluidic capture devices may also be useful for data collection at synchrotron sources.« less

Holographic spectrum-splitting optical systems for solar photovoltaics

NASA Astrophysics Data System (ADS)

Zhang, Deming

Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle-wavelength selective filters that can function as ultra-light-trapping filters. Results from an experimental reflection hologram are used to model the absorption enhancement factor for a silicon solar cell and light-trapping filter. The result shows a significant improvement in current generation for thin-film silicon solar cells under typical operating conditions.

Scalable Loading of a Two-Dimensional Trapped-Ion Array

DTIC Science & Technology

2015-11-25

ion -trap array based on two crossed photo-ionization laser beams . With the use of a continuous flux of pre-cooled neutral...push laser Atomic beam Dierential pumping tube Push laser 2D-MOT 50 K Shield 4 K Shield 4 K stage Trap chip MOT laser Ion To ion pump 5s2 1S0 461...conducted a series of Ramsey experiments on a single trapped ion in the presence and absence of neu- tral atom flux as well as each of the PI laser

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Warren, Emily L; Jain, Nikhil; Tamboli, Adele C

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

NASA Technical Reports Server (NTRS)

Beernink, Kevin; Guha, Subhendu; Yang, Jeff; Banerjee, Arindam; Lord, Ken; DeMaggio, Greg; Liu, Frank; Pietka, Ginger; Johnson, Todd; Reinhout, Melanie;

Parameter optimization for transitions between memory states in small arrays of Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rezac, Jacob D.; Imam, Neena; Braiman, Yehuda

Coupled arrays of Josephson junctions possess multiple stable zero voltage states. Such states can store information and consequently can be utilized for cryogenic memory applications. Basic memory operations can be implemented by sending a pulse to one of the junctions and studying transitions between the states. In order to be suitable for memory operations, such transitions between the states have to be fast and energy efficient. Here in this article we employed simulated annealing, a stochastic optimization algorithm, to study parameter optimization of array parameters which minimizes times and energies of transitions between specifically chosen states that can be utilizedmore » for memory operations (Read, Write, and Reset). Simulation results show that such transitions occur with access times on the order of 10–100 ps and access energies on the order of 10 -19–5×10 -18 J. Numerical simulations are validated with approximate analytical results.« less

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation Using Superconducting Tunnel Junctions with Integrated Radio Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Prober, D. E.; Rhee, K. W.; Schoelkopf, R. J.; Stahle, C. M.; Teufel, J.; Wollack, E. J.

2004-01-01

For high resolution imaging and spectroscopy in the FIR and submillimeter, space observatories will demand sensitive, fast, compact, low-power detector arrays with 104 pixels and sensitivity less than 10(exp -20) W/Hz(sup 0.5). Antenna-coupled superconducting tunnel junctions with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique. The device consists of an antenna to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure current through junctions contacting the absorber. We describe optimization of device parameters, and results on fabrication techniques for producing devices with high yield for detector arrays. We also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

A 3T Sodium and Proton Composite Array Breast Coil

PubMed Central

Kaggie, Joshua D.; Hadley, J. Rock; Badal, James; Campbell, John R.; Park, Daniel J.; Parker, Dennis L.; Morrell, Glen; Newbould, Rexford D.; Wood, Ali F.; Bangerter, Neal K.

2013-01-01

Purpose The objective of this study was to determine whether a sodium phased array would improve sodium breast MRI at 3T. The secondary objective was to create acceptable proton images with the sodium phased array in place. Methods A novel composite array for combined proton/sodium 3T breast MRI is compared to a coil with a single proton and sodium channel. The composite array consists of a 7-channel sodium receive array, a larger sodium transmit coil, and a 4-channel proton transceive array. The new composite array design utilizes smaller sodium receive loops than typically used in sodium imaging, uses novel decoupling methods between the receive loops and transmit loops, and uses a novel multi-channel proton transceive coil. The proton transceive coil reduces coupling between proton and sodium elements by intersecting the constituent loops to reduce their mutual inductance. The coil used for comparison consists of a concentric sodium and proton loop with passive decoupling traps. Results The composite array coil demonstrates a 2–5x improvement in SNR for sodium imaging and similar SNR for proton imaging when compared to a simple single-loop dual resonant design. Conclusion The improved SNR of the composite array gives breast sodium images of unprecedented quality in reasonable scan times. PMID:24105740

Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays.

PubMed

Schuster, Jonathan; Bellotti, Enrico

2013-06-17

We have investigated crosstalk in HgCdTe photovoltaic pixel arrays employing a photon trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. We have found that, compared to non-PT pixel arrays with similar geometry, the array employing the PT structure has a slightly higher optical crosstalk. However, when the total crosstalk is evaluated, the presence of the PT region drastically reduces the total crosstalk; making the use of the PT structure not only useful to obtain broadband operation, but also desirable for reducing crosstalk in small pitch detector arrays.

Nanohole Array-directed Trapping of Mammalian Mitochondria Enabling Single Organelle Analysis

PubMed Central

Kumar, Shailabh; Wolken, Gregory G.; Wittenberg, Nathan J.; Arriaga, Edgar A.; Oh, Sang-Hyun

2016-01-01

We present periodic nanohole arrays fabricated in free-standing metal-coated nitride films as a platform for trapping and analyzing single organelles. When a microliter-scale droplet containing mitochondria is dispensed above the nanohole array, the combination of evaporation and capillary flow directs individual mitochondria to the nanoholes. Mammalian mitochondria arrays were rapidly formed on chip using this technique without any surface modification steps, microfluidic interconnects or external power sources. The trapped mitochondria were depolarized on chip using an ionophore with results showing that the organelle viability and behavior were preserved during the on-chip assembly process. Fluorescence signal related to mitochondrial membrane potential was obtained from single mitochondria trapped in individual nanoholes revealing statistical differences between the behavior of polarized vs. depolarized mammalian mitochondria. This technique provides a fast and stable route for droplet-based directed localization of organelles-on-a-chip with minimal limitations and complexity, as well as promotes integration with other optical or electrochemical detection techniques. PMID:26593329

Quantitative analysis of seismic fault zone waves in the rupture zone of the 1992 Landers, California, earthquake: Evidence for a shallow trapping structure

USGS Publications Warehouse

Peng, Z.; Ben-Zion, Y.; Michael, A.J.; Zhu, L.

2003-01-01

We analyse quantitatively a waveform data set of 238 earthquakes recorded by a dense seismic array across and along the rupture zone of the 1992 Landers earthquake. A grid-search method with station delay corrections is used to locate events that do not have catalogue locations. The quality of fault zone trapped waves generated by each event is determined from the ratios of seismic energy in time windows corresponding to trapped waves and direct S waves at stations close to and off the fault zone. Approximately 70 per cent of the events with S-P times of less than 2 s, including many clearly off the fault, produce considerable trapped wave energy. This distribution is in marked contrast with previous claims that trapped waves are generated only by sources close to or inside the Landers rupture zone. The time difference between the S arrival and trapped waves group does not grow systematically with increasing hypocentral distance and depth. The dispersion measured from the trapped waves is weak. These results imply that the seismic trapping structure at the Landers rupture zone is shallow and does not extend continuously along-strike by more than a few kilometres. Synthetic waveform modelling indicates that the fault zone waveguide has depth of approximately 2-4 km, a width of approximately 200 m, an S-wave velocity reduction relative to the host rock of approximately 30-40 per cent and an S-wave attenuation coefficient of approximately 20-30. The fault zone waveguide north of the array appears to be shallower and weaker than that south of the array. The waveform modelling also indicates that the seismic trapping structure below the array is centred approximately 100 m east of the surface break.

Massive formation of square array junctions dramatically alters cell shape but does not cause lens opacity in the cav1-KO mice.

PubMed

Biswas, Sondip K; Brako, Lawrence; Lo, Woo-Kuen

2014-08-01

The wavy square array junctions are composed of truncated aquaporin-0 (AQP0) proteins typically distributed in the deep cortical and nuclear fibers in wild-type lenses. These junctions may help maintain the narrowed extracellular spaces between fiber cells to minimize light scattering. Herein, we investigate the impact of the cell shape changes, due to abnormal formation of extensive square array junctions, on the lens opacification in the caveolin-1 knockout mice. The cav1-KO and wild-type mice at age 1-22 months were used. By light microscopy examinations, cav1-KO lenses at age 1-18 months were transparent in both cortical and nuclear regions, whereas some lenses older than 18 months old exhibited nuclear cataracts. Scanning EM consistently observed the massive formation of ridge-and-valley membrane surfaces in young fibers at approximately 150 μm deep in all cav1-KO lenses studied. In contrast, the typical ridge-and-valleys were only seen in mature fibers deeper than 400 μm in wild-type lenses. The resulting extensive ridge-and-valleys dramatically altered the overall cell shape in cav1-KO lenses. Remarkably, despite dramatic shape changes, these deformed fiber cells remained intact and made close contact with their neighboring cells. By freeze-fracture TEM, ridge-and-valleys exhibited the typical orthogonal arrangement of 6.6 nm square array intramembrane particles and displayed the narrowed extracellular spaces. Immunofluorescence analysis showed that AQP0 C-terminus labeling was significantly decreased in outer cortical fibers in cav1-KO lenses. However, freeze-fracture immunogold labeling showed that the AQP0 C-terminus antibody was sparsely distributed on the wavy square array junctions, suggesting that the cleavage of AQP0 C-termini might not yet be complete. The cav1-KO lenses with nuclear cataracts showed complete cellular breakdown and large globule formation in the lens nucleus. This study suggests that despite dramatic cell shape changes, the massive formation of wavy square array junctions in intact fibers may provide additional adhesive support for maintaining the narrowed extracellular spaces that are crucial for the transparency of cav1-KO lenses. Copyright © 2014 Elsevier Ltd. All rights reserved.

Experiments with BECs in a Painted Potential: Atom SQUID, Matter Wave Bessel Beams, and Matter Wave Circuits

NASA Astrophysics Data System (ADS)

Boshier, Malcolm; Ryu, Changhyun; Blackburn, Paul; Blinova, Alina; Henderson, Kevin

2014-05-01

The painted potential is a time-averaged optical dipole potential which is able to create arbitrary and dynamic two dimensional potentials for Bose Einstein condensates (BECs). This poster reports three recent experiments using this technique. First, we have realized the dc atom SQUID geometry of a BEC in a toroidal trap with two Josephson junctions. We observe Josephson effects, measure the critical current of the junctions, and find dynamic behavior that is in good agreement with the simple Josephson equations for a tunnel junction with the ideal sinusoidal current-phase relation expected for the parameters of the experiment. Second, we have used free expansion of a rotating toroidal BEC to create matter wave Bessel beams, which are of interest because perfect Bessel beams (plane waves with amplitude profiles described by Bessel functions) propagate without diffraction. Third, we have realized the basic circuit elements necessary to create complex matter wave circuits. We launch BECs at arbitrary velocity along straight waveguides, propagate them around curved waveguides and stadium-shaped waveguide traps, and split them coherently at y-junctions that can also act as switches. Supported by LANL/LDRD.

Scalable loading of a two-dimensional trapped-ion array

PubMed Central

Bruzewicz, Colin D.; McConnell, Robert; Chiaverini, John; Sage, Jeremy M.

2016-01-01

Two-dimensional arrays of trapped-ion qubits are attractive platforms for scalable quantum information processing. Sufficiently rapid reloading capable of sustaining a large array, however, remains a significant challenge. Here with the use of a continuous flux of pre-cooled neutral atoms from a remotely located source, we achieve fast loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive two-dimensional arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux. PMID:27677357

Light-trapping surface coating with concave arrays for efficiency enhancement in amorphous silicon thin-film solar cells

NASA Astrophysics Data System (ADS)

Liu, Daiming; Wang, Qingkang

2018-08-01

Light trapping is particularly important because of the desire to produce low-cost solar cells with the thinnest possible photoactive layers. Herein, along the research line of "optimization →fabrication →characterization →application", concave arrays were incorporated into amorphous silicon thin-film solar cell for lifting its photoelectric conversion efficiency. In advance, based on rigorous coupled wave analysis method, optics simulations were performed to obtain the optimal period of 10 μm for concave arrays. Microfabrication processes were used to etch concave arrays on glass, and nanoimprint was devoted to transfer the pattern onto polymer coatings with a high fidelity. Spectral characterizations prove that the concave-arrays coating enjoys excellent the light-trapping behaviors, by reducing the reflectance to 7.4% from 8.6% of bare glass and simultaneously allowing a high haze ratio of ∼ 70% in 350-800 nm. Compared with bare cell, the concave-arrays coating based amorphous silicon thin-film solar cell possesses the improving photovoltaic performances. Relative enhancements are 3.46% and 3.57% in short circuit current and photoelectric conversion efficiency, respectively. By the way, this light-trapping coating is facile, low-cost and large-scale, and can be straightforward introduced in other ready-made solar devices.

Refractive multiple optical tweezers for parallel biochemical analysis in micro-fluidics

NASA Astrophysics Data System (ADS)

Merenda, Fabrice; Rohner, Johann; Pascoal, Pedro; Fournier, Jean-Marc; Vogel, Horst; Salathé, René-Paul

2007-02-01

We present a multiple laser tweezers system based on refractive optics. The system produces an array of 100 optical traps thanks to a refractive microlens array, whose focal plane is imaged into the focal plane of a high-NA microscope objective. This refractive multi-tweezers system is combined to micro-fluidics, aiming at performing simultaneous biochemical reactions on ensembles of free floating objects. Micro-fluidics allows both transporting the particles to the trapping area, and conveying biochemical reagents to the trapped particles. Parallel trapping in micro-fluidics is achieved with polystyrene beads as well as with native vesicles produced from mammalian cells. The traps can hold objects against fluid flows exceeding 100 micrometers per second. Parallel fluorescence excitation and detection on the ensemble of trapped particles is also demonstrated. Additionally, the system is capable of selectively and individually releasing particles from the tweezers array using a complementary steerable laser beam. Strategies for high-yield particle capture and individual particle release in a micro-fluidic environment are discussed. A comparison with diffractive optical tweezers enhances the pros and cons of refractive systems.

A high efficiency dual-junction solar cell implemented as a nanowire array.

PubMed

Yu, Shuqing; Witzigmann, Bernd

2013-01-14

In this work, we present an innovative design of a dual-junction nanowire array solar cell. Using a dual-diameter nanowire structure, the solar spectrum is separated and absorbed in the core wire and the shell wire with respect to the wavelength. This solar cell provides high optical absorptivity over the entire spectrum due to an electromagnetic concentration effect. Microscopic simulations were performed in a three-dimensional setup, and the optical properties of the structure were evaluated by solving Maxwell's equations. The Shockley-Queisser method was employed to calculate the current-voltage relationship of the dual-junction structure. Proper design of the geometrical and material parameters leads to an efficiency of 39.1%.

Catalyst-free, III-V nanowire photovoltaics

NASA Astrophysics Data System (ADS)

Davies, D. G.; Lambert, N.; Fry, P. W.; Foster, A.; Krysa, A. B.; Wilson, L. R.

2014-05-01

We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.

Solitonic Gateless Computing

DTIC Science & Technology

2006-01-29

solitons. In essence , these intersections behave as DS switching junctions. Figure 1(a) depicts a nonlinear array network involving consecutive bends...junction, the signal DS would have totally disintegrated into transmitted and reflected waves. Thus in essence , the junction operates as an AND...2000-2001) Reinhard Neumeier (undergraduate student, visiting from Technical Un. of Munich, CREOL, 2003) Jasmine Milner (undergraduate student

A novel adhering junction in the apical ciliary apparatus of the rotifer Brachionus plicatilis (Rotifera, Monogononta).

PubMed

Dallai, R; Lupetti, P; Lane, N J

1996-10-01

Cultures of the rotifer Brachionus plicatilis were examined with regard to their interepithelial junctions after infiltration with the extracellular tracer lanthanum, freeze-fracturing or quick-freeze deep-etching. The lateral borders between ciliated cells have an unusual apical adhering junction. This apical part of their intercellular cleft looks desmosome-like, but it is characterized by unusual intramembranous E-face clusters of particles. Deep-etching reveals that these are packed together in short rows which lie parallel to one another in orderly arrays. The true membrane surface in these areas features filaments in the form of short ribbons; these are produced by projections, possibly part of the glycocalyx, emerging from the membranes, between which the electron-dense tracer lanthanum permeates. These projections appear to overlap with each other in the centre of the intercellular cleft; this would provide a particularly flexible adaptation to maintain cell-cell contact and coordination as a consequence. The filamentous ribbons may be held in position by the intramembranous particle arrays since both have a similar size and distribution. These contacts are quite different from desmosomes and appear to represent a distinct new category of adhesive cell-cell junction. Beneath these novel structures, conventional pleated septate junctions are found, exhibiting the undulating intercellular ribbons typical of this junctional type, as well as the usual parallel alignments of intramembranous rows of EF grooves and PF particles. Below these are found gap junctions as close-packed plaques of intramembranous particles on either the P-face or E-face. After freeze-fracturing, the complementary fracture face to the particles shows pits, usually on the P-face, arrayed with a very precise hexagonal pattern.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

Effects of silicon nanowire morphology on optical properties and hybrid solar cell performance

NASA Astrophysics Data System (ADS)

Syu, Hong-Jhang; Shiu, Shu-Chia; Hung, Yung-Jr; Lee, San-Liang; Lin, Ching-Fuh

2012-10-01

Silicon nanowire (SiNW) arrays are widespread applied on hybrid photovoltaic devices because SiNW arrays can substitute the pyramid texture and anti-reflection coating due to its strong light trapping. Also, SiNWs can be prepared through a cost-efficient process of metal-assisted chemical etching. However, though longer SiNW arrays have lower reflectance, the top of long SiNWs aggregate together to make junction synthesis difficult for SiNW/organic hybrid solar cell. To control and analyze the effect of SiNW array morphology on hybrid solar cells, here we change the metal deposition condition for metal-assisted chemical etching to obtain different SiNW array morphologies. The experiment was separated to two groups, by depositing metal, say, Ag, before etching (BE) or during etching (DE). For group BE, Ag was deposited on n-type Si (n-Si) wafers by thermal evaporation; then etched by H2O2 and HF. For group DE, n-Si was etched by Ag+ and HF directly. Ag was deposited on n-Si during etching process. Afterwards, residual Ag and SiO2 were removed by HNO3 and buffered HF, successively; then Ti and Ag were evaporated on the bottom of Si to be a cathode. Finally, SiNWs were stuck on the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) that was spincoated on the ITO coated glass to form SiNW/organic heterojunction. The results show that group BE has reflectance lower than that in group DE in solar spectrum. However, group BE has smaller power conversion efficiency (PCE) of 8.65% and short-circuit current density (Jsc) of 24.94 mA/cm2 than group DE of PCE of 9.47% and Jsc of 26.81 mA/cm2.

Overdamped Nb/Al-AlO{sub x}/Nb Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacquaniti, V.; Cagliero, C.; Maggi, S.

2005-01-24

We report the fabrication and characterization of overdamped Nb/Al-AlO{sub x}/Nb superconductor-insulator-superconductor Josephson junction whose fabrication process derives from that of the well-known hysteretic junctions. These junctions are an intermediate state between the superconductor-normal metal-superconductor and the superconductor-insulator-superconductor Josephson junctions. Stable and reproducible nonhysteretic current-voltage characteristics are obtained with a proper choice of the fabrication parameters. We have measured critical current densities J{sub C} from 10{sup 3} up to 2x10{sup 4} A/cm{sup 2}, with characteristic voltages from 80 to nearly 450 {mu}V. The junctions are stable against time and repeated thermal cycling.

Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers.

PubMed

Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun

2017-12-13

Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaO x /NbO x /Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaO x stack to increase the number of trap sites in the RS GaO x layer through interfacial reactions between the Ti and GaO x layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbO x /Pt stack to add rectifying behavior to the RS GaO x layer. This behavior is a result of the large Schottky barrier height between the NbO x and Pt layers. Finally, both the Ti/GaO x and NbO x /Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (-2.8 to 2.5 V), high on/off ratios (∼20), high selectivity (∼10 4 ), high operating speeds (200-500 ns), a very low forming voltage (∼3 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.

Plasmonic non-concentric nanorings array as an unidirectional nano-optical conveyor belt actuated by polarization rotation.

PubMed

Jiang, Min; Wang, Guanghui; Jiao, Wenxiang; Ying, Zhoufeng; Zou, Ningmu; Ho, Ho-Pui; Sun, Tianyu; Zhang, Xuping

2017-01-15

We report a nano-optical conveyor belt containing an array of gold plasmonic non-concentric nanorings (PNNRs) for the realization of trapping and unidirectional transportation of nanoparticles through rotating the polarization of an excitation beam. The location of hot spots within an asymmetric plasmonic nanostructure is polarization dependent, thus making it possible to manipulate a trapped target by rotating the incident polarization state. In the case of PNNR, the two poles have highly unbalanced trap potential. This greatly enhances the chance of transferring trapped particles between adjacent PNNRs in a given direction through rotating the polarization. As confirmed by three-dimensional finite-difference time-domain analysis, an array of PNNRs forms an unidirectional nano-optical conveyor belt, which delivers target nanoparticles or biomolecules over a long distance with nanometer accuracy. With the capacity to trap and to transfer, our design offers a versatile scheme for conducting mechanical sample manipulation in many on-chip optofluidic applications.

Integrated Phase Array Antenna/Solar Cell System for Flexible Access Communication (IA/SAC)

NASA Technical Reports Server (NTRS)

Clark, E. B.; Lee, R. Q.; Pal, A. T.; Wilt, D. M.; McElroy, B. D.; Mueller, C. H.

2005-01-01

This paper describes recent efforts to integrate advanced solar cells with printed planar antennas. Several previous attempts have been reported in the literature, but this effort is unique in several ways. It uses Gallium Arsenide (GaAs) multi-junction solar cell technology. The solar cells and antennas will be integrated onto a common GaAs substrate. When fully implemented, IA/SAC will be capable of dynamic beam steering. In addition, this program targets the X-band (8 - 12 GHz) and higher frequencies, as compared to the 2.2 - 2.9 GHz arrays targeted by other organizations. These higher operating frequencies enable a greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of 2 x 2 cm GaAs Monolithically Integrated Modules (MIM) with integrated patch antennas on the opposite side of the substrate. Subsequent work will involve the design and development of devices having the GaAs MIMs and the antennas on the same side of the substrate. Results from the phase one efforts will be presented.

A scalable quantum computer with ions in an array of microtraps

PubMed

Cirac; Zoller

2000-04-06

Quantum computers require the storage of quantum information in a set of two-level systems (called qubits), the processing of this information using quantum gates and a means of final readout. So far, only a few systems have been identified as potentially viable quantum computer models--accurate quantum control of the coherent evolution is required in order to realize gate operations, while at the same time decoherence must be avoided. Examples include quantum optical systems (such as those utilizing trapped ions or neutral atoms, cavity quantum electrodynamics and nuclear magnetic resonance) and solid state systems (using nuclear spins, quantum dots and Josephson junctions). The most advanced candidates are the quantum optical and nuclear magnetic resonance systems, and we expect that they will allow quantum computing with about ten qubits within the next few years. This is still far from the numbers required for useful applications: for example, the factorization of a 200-digit number requires about 3,500 qubits, rising to 100,000 if error correction is implemented. Scalability of proposed quantum computer architectures to many qubits is thus of central importance. Here we propose a model for an ion trap quantum computer that combines scalability (a feature usually associated with solid state proposals) with the advantages of quantum optical systems (in particular, quantum control and long decoherence times).

Bipolar Electrode Array Embedded in a Polymer Light-Emitting Electrochemical Cell.

PubMed

Gao, Jun; Chen, Shulun; AlTal, Faleh; Hu, Shiyu; Bouffier, Laurent; Wantz, Guillaume

2017-09-20

A linear array of aluminum discs is deposited between the driving electrodes of an extremely large planar polymer light-emitting electrochemical cell (PLEC). The planar PLEC is then operated at a constant bias voltage of 100 V. This promotes in situ electrochemical doping of the luminescent polymer from both the driving electrodes and the aluminum discs. These aluminum discs function as discrete bipolar electrodes (BPEs) that can drive redox reactions at their extremities. Time-lapse fluorescence imaging reveals that p- and n-doping that originated from neighboring BPEs can interact to form multiple light-emitting p-n junctions in series. This provides direct evidence of the working principle of bulk homojunction PLECs. The propagation of p-doping is faster from the BPEs than from the positive driving electrode due to electric field enhancement at the extremities of BPEs. The effect of field enhancement and the fact that the doping fronts only need to travel the distance between the neighboring BPEs to form a light-emitting junction greatly reduce the response time for electroluminescence in the region containing the BPE array. The near simultaneous formation of multiple light-emitting p-n junctions in series causes a measurable increase in cell current. This indicates that the region containing a BPE is much more conductive than the rest of the planar cell despite the latter's greater width. The p- and n-doping originating from the BPEs is initially highly confined. Significant expansion and divergence of doping occurred when the region containing the BPE array became more conductive. The shape and direction of expanded doping strongly suggest that the multiple light-emitting p-n junctions, formed between and connected by the array of metal BPEs, have functioned as a single rod-shaped BPE. This represents a new type of BPE that is formed in situ and as a combination of metal, doped polymers, and forward-biased p-n junctions connected in series.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-01

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions.

PubMed

Wu, Yao; Yan, Xin; Wei, Wei; Zhang, Jinnan; Zhang, Xia; Ren, Xiaomin

2018-04-25

We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions. The AlGaAs not only serves as passivation layers for GaAs nanowires but also confines the optical generation in the active regions, reducing the recombination loss in heavily doped regions and the minority carrier recombination at the top contact. The results show that the conversion efficiency of GaAs nanowires can be greatly enhanced by using AlGaAs for the p segment instead of GaAs. A maximum efficiency enhancement of 8.42% has been achieved in this study. And for axial nanowire, by using AlGaAs for the top p segment, a relatively long top segment can be employed without degenerating device performance, which could facilitate the fabrication and contacting of nanowire array solar cells. While for radial nanowires, AlGaAs/GaAs nanowires show better tolerance to p-shell thickness and surface condition.

Immobilization of single argon atoms in nano-cages of two-dimensional zeolite model systems.

PubMed

Zhong, Jian-Qiang; Wang, Mengen; Akter, Nusnin; Kestell, John D; Boscoboinik, Alejandro M; Kim, Taejin; Stacchiola, Dario J; Lu, Deyu; Boscoboinik, J Anibal

2017-07-17

The confinement of noble gases on nanostructured surfaces, in contrast to bulk materials, at non-cryogenic temperatures represents a formidable challenge. In this work, individual Ar atoms are trapped at 300 K in nano-cages consisting of (alumino)silicate hexagonal prisms forming a two-dimensional array on a planar surface. The trapping of Ar atoms is detected in situ using synchrotron-based ambient pressure X-ray photoelectron spectroscopy. The atoms remain in the cages upon heating to 400 K. The trapping and release of Ar is studied combining surface science methods and density functional theory calculations. While the frameworks stay intact with the inclusion of Ar atoms, the permeability of gasses (for example, CO) through them is significantly affected, making these structures also interesting candidates for tunable atomic and molecular sieves. These findings enable the study of individually confined noble gas atoms using surface science methods, opening up new opportunities for fundamental research.

Immobilization of single argon atoms in nano-cages of two-dimensional zeolite model systems

DOE PAGES

Zhong, Jian-Qiang; Wang, Mengen; Akter, Nusnin; ...

2017-07-17

The confinement of noble gases on nanostructured surfaces, in contrast to bulk materials, at non-cryogenic temperatures represents a formidable challenge. Here, individual Ar atoms are trapped at 300 K in nano-cages consisting of (alumino)silicate hexagonal prisms forming a two-dimensional array on a planar surface. The trapping of Ar atoms is detected in situ using synchrotron-based ambient pressure X-ray photoelectron spectroscopy. The atoms remain in the cages upon heating to 400 K. The trapping and release of Ar is studied combining surface science methods and density functional theory calculations. While the frameworks stay intact with the inclusion of Ar atoms, themore » permeability of gasses (for example, CO) through them is significantly affected, making these structures also interesting candidates for tunable atomic and molecular sieves. Our findings enable the study of individually confined noble gas atoms using surface science methods, opening up new opportunities for fundamental research.« less

Immobilization of single argon atoms in nano-cages of two-dimensional zeolite model systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Jian-Qiang; Wang, Mengen; Akter, Nusnin

The confinement of noble gases on nanostructured surfaces, in contrast to bulk materials, at non-cryogenic temperatures represents a formidable challenge. Here, individual Ar atoms are trapped at 300 K in nano-cages consisting of (alumino)silicate hexagonal prisms forming a two-dimensional array on a planar surface. The trapping of Ar atoms is detected in situ using synchrotron-based ambient pressure X-ray photoelectron spectroscopy. The atoms remain in the cages upon heating to 400 K. The trapping and release of Ar is studied combining surface science methods and density functional theory calculations. While the frameworks stay intact with the inclusion of Ar atoms, themore » permeability of gasses (for example, CO) through them is significantly affected, making these structures also interesting candidates for tunable atomic and molecular sieves. Our findings enable the study of individually confined noble gas atoms using surface science methods, opening up new opportunities for fundamental research.« less

Ferroelectric nanotraps for polar molecules

NASA Astrophysics Data System (ADS)

Dutta, Omjyoti; Giedke, G.

2018-02-01

We propose and analyze an electrostatic-optical nanoscale trap for cold diatomic polar molecules. The main ingredient of our proposal is a square array of ferroelectric nanorods with alternating polarization. We show that, in contrast to electrostatic traps using the linear Stark effect, a quadratic Stark potential supports long-lived trapped states. The molecules are kept at a fixed height from the nanorods by a standing-wave optical dipole trap. For the molecules and materials considered, we find nanotraps with trap frequency up to 1 MHz, ground-state width ˜20 nm with lattice periodicity of ˜200 nm . Analyzing the loss mechanisms due to nonadiabaticity, surface-induced radiative transitions, and laser-induced transitions, we show the existence of trapped states with lifetime ˜1 s , competitive with current traps created via optical mechanisms. As an application we extend our discussion to a one-dimensional (1D) array of nanotraps to simulate a long-range spin Hamiltonian in our structure.

Plasmonic nanorod arrays of a two-segment dimer and a coaxial cable with 1 nm gap for large field confinement and enhancement

NASA Astrophysics Data System (ADS)

Cheng, Zi-Qiang; Nan, Fan; Yang, Da-Jie; Zhong, Yu-Ting; Ma, Liang; Hao, Zhong-Hua; Zhou, Li; Wang, Qu-Quan

2015-01-01

Seeking plasmonic nanostructures with large field confinement and enhancement is significant for photonic and electronic nanodevices with high sensitivity, reproducibility, and tunability. Here, we report the synthesis of plasmonic arrays composed of two-segment dimer nanorods and coaxial cable nanorods with ~1 nm gap insulated by a self-assembled Raman molecule monolayer. The gap-induced plasmon coupling generates an intense field in the gap region of the dimer junction and the cable interlayer. As a result, the longitudinal plasmon resonance of nanorod arrays with high tunability is obviously enhanced. Most interestingly, the field enhancement of dimer nanorod arrays can be tuned by the length ratio L1/L2 of the two segments, and the maximal enhancement appears at L1/L2 = 1. In that case, the two-photon luminescence (TPL) of dimer nanorod arrays and the Raman intensity in the dimer junction is enhanced by 27 and 30 times, respectively, under resonant excitation. In the same way, the Raman intensity in the gap region is enhanced 16 times for the coaxial cable nanorod arrays. The plasmonic nanorod arrays synthesized by the facile method, having tunable plasmon properties and large field enhancement, indicate an attractive pathway to the photonic nanodevices.Seeking plasmonic nanostructures with large field confinement and enhancement is significant for photonic and electronic nanodevices with high sensitivity, reproducibility, and tunability. Here, we report the synthesis of plasmonic arrays composed of two-segment dimer nanorods and coaxial cable nanorods with ~1 nm gap insulated by a self-assembled Raman molecule monolayer. The gap-induced plasmon coupling generates an intense field in the gap region of the dimer junction and the cable interlayer. As a result, the longitudinal plasmon resonance of nanorod arrays with high tunability is obviously enhanced. Most interestingly, the field enhancement of dimer nanorod arrays can be tuned by the length ratio L1/L2 of the two segments, and the maximal enhancement appears at L1/L2 = 1. In that case, the two-photon luminescence (TPL) of dimer nanorod arrays and the Raman intensity in the dimer junction is enhanced by 27 and 30 times, respectively, under resonant excitation. In the same way, the Raman intensity in the gap region is enhanced 16 times for the coaxial cable nanorod arrays. The plasmonic nanorod arrays synthesized by the facile method, having tunable plasmon properties and large field enhancement, indicate an attractive pathway to the photonic nanodevices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05544f

Cross reactive arrays of three-way junction sensors for steroid determination

NASA Technical Reports Server (NTRS)

Stojanovic, Milan N. (Inventor); Nikic, Dragan B. (Inventor); Landry, Donald (Inventor)

2008-01-01

This invention provides analyte sensitive oligonucleotide compositions for detecting and analyzing analytes in solution, including complex solutions using cross reactive arrays of analyte sensitive oligonucleotide compositions.

Compact and multi-view solid state neutral particle analyzer arrays on National Spherical Torus Experiment-Upgrade

DOE PAGES

Liu, D.; Heidbrink, W. W.; Tritz, K.; ...

2016-07-29

A compact and multi-view solid state neutral particle analyzer (SSNPA) diagnostic based on silicon photodiode arrays has been successfully tested on the National Spherical Torus Experiment-Upgrade. The SSNPA diagnostic provides spatially, temporally, and pitch-angle resolved measurements of fast-ion distribution by detecting fast neutral flux resulting from the charge exchange (CX) reactions. The system consists of three 16-channel subsystems: t-SSNPA viewing the plasma mid-radius and neutral beam (NB) line #2 tangentially, r-SSNPA viewing the plasma core and NB line #1 radially, and p-SSNPA with no intersection with any NB lines. Due to the setup geometry, the active CX signals of t-SSNPAmore » and r-SSNPA are mainly sensitive to passing and trapped particles, respectively. Additionally, both t-SSNPA and r-SSNPA utilize three vertically stacked arrays with different filter thicknesses to obtain coarse energy information. The experimental data show that all channels are operational. The signal to noise ratio is typically larger than 10, and the main noise is x-ray induced signal. The active and passive CX signals are clearly observed on t-SSNPA and r-SSNPA during NB modulation. The SSNPA data also indicate significant losses of passing particles during sawteeth, while trapped particles are weakly affected. Fluctuations up to 120 kHz have been observed on SSNPA, and they are strongly correlated with magnetohydrodynamics instabilities.« less

Optical Manipulation of Single Magnetic Beads in a Microwell Array on a Digital Microfluidic Chip.

PubMed

Decrop, Deborah; Brans, Toon; Gijsenbergh, Pieter; Lu, Jiadi; Spasic, Dragana; Kokalj, Tadej; Beunis, Filip; Goos, Peter; Puers, Robert; Lammertyn, Jeroen

2016-09-06

The detection of single molecules in magnetic microbead microwell array formats revolutionized the development of digital bioassays. However, retrieval of individual magnetic beads from these arrays has not been realized until now despite having great potential for studying captured targets at the individual level. In this paper, optical tweezers were implemented on a digital microfluidic platform for accurate manipulation of single magnetic beads seeded in a microwell array. Successful optical trapping of magnetic beads was found to be dependent on Brownian motion of the beads, suggesting a 99% chance of trapping a vibrating bead. A tailor-made experimental design was used to screen the effect of bead type, ionic buffer strength, surfactant type, and concentration on the Brownian activity of beads in microwells. With the optimal conditions, the manipulation of magnetic beads was demonstrated by their trapping, retrieving, transporting, and repositioning to a desired microwell on the array. The presented platform combines the strengths of digital microfluidics, digital bioassays, and optical tweezers, resulting in a powerful dynamic microwell array system for single molecule and single cell studies.

A hierarchical model for estimating density in camera-trap studies

USGS Publications Warehouse

Royle, J. Andrew; Nichols, James D.; Karanth, K.Ullas; Gopalaswamy, Arjun M.

2009-01-01

Estimating animal density using capture–recapture data from arrays of detection devices such as camera traps has been problematic due to the movement of individuals and heterogeneity in capture probability among them induced by differential exposure to trapping.We develop a spatial capture–recapture model for estimating density from camera-trapping data which contains explicit models for the spatial point process governing the distribution of individuals and their exposure to and detection by traps.We adopt a Bayesian approach to analysis of the hierarchical model using the technique of data augmentation.The model is applied to photographic capture–recapture data on tigers Panthera tigris in Nagarahole reserve, India. Using this model, we estimate the density of tigers to be 14·3 animals per 100 km2 during 2004.Synthesis and applications. Our modelling framework largely overcomes several weaknesses in conventional approaches to the estimation of animal density from trap arrays. It effectively deals with key problems such as individual heterogeneity in capture probabilities, movement of traps, presence of potential ‘holes’ in the array and ad hoc estimation of sample area. The formulation, thus, greatly enhances flexibility in the conduct of field surveys as well as in the analysis of data, from studies that may involve physical, photographic or DNA-based ‘captures’ of individual animals.

A junction-level optoelectronic characterization of etching-induced damage for third-generation HgCdTe infrared focal-plane array photodetectors

NASA Astrophysics Data System (ADS)

Wang, Peng; Wang, Yueming; Wu, Mingzai; Ye, Zhenhua

2018-06-01

Third-generation HgCdTe-based infrared focal plane arrays require high aspect ratio trenches with admissible etch induced damage at the surface and sidewalls for effectively isolating the pixels. In this paper, the high-density inductively coupled plasma enhanced reaction ion etching technique has been used for micro-mesa delineation of HgCdTe for third-generation infrared focal-plane array detectors. A nondestructive junction-level optoelectronic characterization method called laser beam induced current (LBIC) is used to evaluate the lateral junction extent of HgCdTe etch-induced damage scanning electron microscopy. It is found that the LBIC profiles exhibit evident double peaks and valleys phenomena. The lateral extent of etch induced mesa damage of ∼2.4 μm is obtained by comparing the LBIC profile and the scanning electron microscopy image of etched sample. This finding will guide us to nondestructively identify the distributions of the etching damages in large scale HgCdTe micro-mesa.

Measurement of Anomalously Strong Emission from the 1s-9p Transition in the Spectrum of H-like Phosphorus Following Charge Exchange with Molecular Hydrogen

NASA Technical Reports Server (NTRS)

Leutenegger, M. A.; Beiersdorfer, P.; Brown, G. V.; Kelley, R. L.; Porter, F. S.

2010-01-01

We have measured K-shell x-ray spectra of highly ionized argon and phosphorus following charge exchange with molecular hydrogen at low collision energy in an electron beam ion trap using an x-ray calorimeter array with approx.6 eV resolution. We find that the emission at the high-end of the Lyman series is greater by a factor of two for phosphorus than for argon, even though the measurement was performed concurrently and the atomic numbers are similar. This does not agree with current theoretical models and deviates from the trend observed in previous measurements.

Ball-grid array architecture for microfabricated ion traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guise, Nicholas D., E-mail: nicholas.guise@gtri.gatech.edu; Fallek, Spencer D.; Stevens, Kelly E.

2015-05-07

State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensivemore » surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with {sup 40}Ca{sup +} ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with {sup 171}Yb{sup +} ions in a second BGA trap.« less

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

A Scalable Microfabricated Ion Trap for Quantum Information Processing

NASA Astrophysics Data System (ADS)

Maunz, Peter; Haltli, Raymond; Hollowell, Andrew; Lobser, Daniel; Mizrahi, Jonathan; Rembetski, John; Resnick, Paul; Sterk, Jonathan D.; Stick, Daniel L.; Blain, Matthew G.

2016-05-01

Trapped Ion Quantum Information Processing (QIP) relies on complex microfabricated trap structures to enable scaling of the number of quantum bits. Building on previous demonstrations of surface-electrode ion traps, we have designed and characterized the Sandia high-optical-access (HOA-2) microfabricated ion trap. This trap features high optical access, high trap frequencies, low heating rates, and negligible charging of dielectric trap components. We have observed trap lifetimes of more than 100h, measured trap heating rates for ytterbium of less than 40quanta/s, and demonstrated shuttling of ions from a slotted to an above surface region and through a Y-junction. Furthermore, we summarize demonstrations of high-fidelity single and two-qubit gates realized in this trap. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000. This work was supported by the Intelligence Advanced Research Projects Activity (IARPA).

Nanophotonic Trapping for Precise Manipulation of Biomolecular Arrays

PubMed Central

Soltani, Mohammad; Lin, Jun; Forties, Robert A.; Inman, James T.; Saraf, Summer N.; Fulbright, Robert M.; Lipson, Michal; Wang, Michelle D.

2014-01-01

Optical trapping is a powerful manipulation and measurement technique widely employed in the biological and materials sciences1–8. Miniaturizing optical trap instruments onto optofluidic platforms holds promise for high throughput lab-on-chip applications9–16. However, a persistent challenge with existing optofluidic devices has been controlled and precise manipulation of trapped particles. Here we report a new class of on-chip optical trapping devices. Using photonic interference functionalities, an array of stable, three-dimensional on-chip optical traps is formed at the antinodes of a standing-wave evanescent field on a nanophotonic waveguide. By employing the thermo-optic effect via integrated electric microheaters, the traps can be repositioned at high speed (~ 30 kHz) with nanometer precision. We demonstrate sorting and manipulation of individual DNA molecules. In conjunction with laminar flows and fluorescence, we also show precise control of the chemical environment of a sample with simultaneous monitoring. Such a controllable trapping device has the potential for high-throughput precision measurements on chip. PMID:24776649

Nanophotonic trapping for precise manipulation of biomolecular arrays.

PubMed

Soltani, Mohammad; Lin, Jun; Forties, Robert A; Inman, James T; Saraf, Summer N; Fulbright, Robert M; Lipson, Michal; Wang, Michelle D

2014-06-01

Optical trapping is a powerful manipulation and measurement technique widely used in the biological and materials sciences. Miniaturizing optical trap instruments onto optofluidic platforms holds promise for high-throughput lab-on-a-chip applications. However, a persistent challenge with existing optofluidic devices has been achieving controlled and precise manipulation of trapped particles. Here, we report a new class of on-chip optical trapping devices. Using photonic interference functionalities, an array of stable, three-dimensional on-chip optical traps is formed at the antinodes of a standing-wave evanescent field on a nanophotonic waveguide. By employing the thermo-optic effect via integrated electric microheaters, the traps can be repositioned at high speed (∼30 kHz) with nanometre precision. We demonstrate sorting and manipulation of individual DNA molecules. In conjunction with laminar flows and fluorescence, we also show precise control of the chemical environment of a sample with simultaneous monitoring. Such a controllable trapping device has the potential to achieve high-throughput precision measurements on chip.

Deformable L-shaped microwell array for trapping pairs of heterogeneous cells

NASA Astrophysics Data System (ADS)

Lee, Gi-Hun; Kim, Sung-Hwan; Kang, AhRan; Takayama, Shuichi; Lee, Sang-Hoon; Park, Joong Yull

2015-03-01

To study cell-to-cell interactions, there has been a continuous demand on developing microsystems for trapping pairs of two different cells in microwell arrays. Here, we propose an L-shaped microwell (L-microwell) array that relies on the elasticity of a polydimethylsiloxane (PDMS) substrate for trapping and pairing heterogeneous cells. We designed an L-microwell suitable for trapping single cell in each branch via stretching/releasing the PDMS substrate, and also performed 3D time-dependent diffusion simulations to visualize how cell-secreted molecules diffuse in the L-microwell and communicate with the partner cell. The computational results showed that the secreted molecule first contacted the partner cell after 35 min, and the secreted molecule fully covered the partner cell in 4 h (when referenced to 10% of the secreted molecular concentration). The molecules that diffused to the outside of the L-microwell were significantly diluted by the bulk solution, which prevented unwanted cellular communication between neighboring L-microwells. We produced over 5000 cell pairs in one 2.25 cm2 array with about 30 000 L-microwells. The proposed L-microwell array offers a versatile and convenient cell pairing method to investigate cell-to-cell interactions in, for example, cell fusion, immune reactions, and cancer metastasis.

Measurement of Single Channel Currents from Cardiac Gap Junctions

NASA Astrophysics Data System (ADS)

Veenstra, Richard D.; Dehaan, Robert L.

1986-08-01

Cardiac gap junctions consist of arrays of integral membrane proteins joined across the intercellular cleft at points of cell-to-cell contact. These junctional proteins are thought to form pores through which ions can diffuse from cytosol to cytosol. By monitoring whole-cell currents in pairs of embryonic heart cells with two independent patch-clamp circuits, the properties of single gap junction channels have been investigated. These channels had a conductance of about 165 picosiemens and underwent spontaneous openings and closings that were independent of voltage. Channel activity and macroscopic junctional conductance were both decreased by the uncoupling agent 1-octanol.

Niobium tunnel junction fabrication using e-gun evaporation and SNAP

NASA Astrophysics Data System (ADS)

Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

1990-11-01

We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

Experimental Study of Arcing on High-voltage Solar Arrays

NASA Technical Reports Server (NTRS)

Vayner, Boris; Galofaro, Joel; Ferguson, Dale

2005-01-01

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

Experimental Study of Arcing on High-Voltage Solar Arrays

NASA Technical Reports Server (NTRS)

Vayner, Boris; Galofaro, Joel; Ferguson, Dale

2003-01-01

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism suggests that such modifications can be done in the following directions: 1) To insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); 2) To change a coverglass geometry (overhang); 3) To increase a coverglass thickness; 4) To outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in a large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that stimulates the LEO operational temperature. The experimental setup is described below.

Preliminary Low Temperature Electron Irradiation of Triple Junction Solar Cells

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Mueller, Robert L.; Scrivner, Roy L.; Helizon, Roger S.

2007-01-01

For many years extending solar power missions far from the sun has been a challenge not only due to the rapid falloff in solar intensity (intensity varies as inverse square of solar distance) but also because some of the solar cells in an array may exhibit a LILT (low intensity low temperature) degradation that reduces array performance. Recent LILT tests performed on commercial triple junction solar cells have shown that high performance can be obtained at solar distances as great as approx. 5 AU1. As a result, their use for missions going far from the sun has become very attractive. One additional question that remains is whether the radiation damage experienced by solar cells under low temperature conditions will be more severe than when measured during room temperature radiation tests where thermal annealing may take place. This is especially pertinent to missions such as the New Frontiers mission Juno, which will experience cell irradiation from the trapped electron environment at Jupiter. Recent testing2 has shown that low temperature proton irradiation (10 MeV) produces cell degradation results similar to room temperature irradiations and that thermal annealing does not play a factor. Although it is suggestive to propose the same would be observed for low temperature electron irradiations, this has not been verified. JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature. A fluence of 1E15 1MeV electrons was selected as representative of a moderately high dose that might be expected for a solar powered mission. Fluences much greater than this would require large increases in array area and mass, compromising the ability of PV to compete with non-solar alternatives.

Performance and Durability of Thin Film Thermocouple Array on a Porous Electrode.

PubMed

Guk, Erdogan; Ranaweera, Manoj; Venkatesan, Vijay; Kim, Jung-Sik

2016-08-23

Management of solid oxide fuel cell (SOFC) thermal gradients is vital to limit thermal expansion mismatch and thermal stress. However, owing to harsh operation conditions of SOFCs and limited available space in stack configuration, the number of techniques available to obtain temperature distribution from the cell surface is limited. The authors previously developed and studied a thermocouple array pattern to detect surface temperature distribution on an SOFC in open circuit conditions. In this study, the performance in terms of mechanical durability and oxidation state of the thin film thermoelements of the thermocouple array on the porous SOFC cathode is investigated. A thin-film multi-junction thermocouple array was sputter deposited using a magnetron sputter coater. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterisation techniques were carried out to understand characteristics of the thin film before and after temperature (20 °C-800 °C) measurement. Temperature readings from the sensor agreed well with the closely placed commercial thermocouple during heating segments. However, a sensor failure occurred at around 350 °C during the cooling segment. The SEM and XPS tests revealed cracks on the thin film thermoelements and oxidation to the film thickness direction.

Performance and Durability of Thin Film Thermocouple Array on a Porous Electrode

PubMed Central

Guk, Erdogan; Ranaweera, Manoj; Venkatesan, Vijay; Kim, Jung-Sik

2016-01-01

Management of solid oxide fuel cell (SOFC) thermal gradients is vital to limit thermal expansion mismatch and thermal stress. However, owing to harsh operation conditions of SOFCs and limited available space in stack configuration, the number of techniques available to obtain temperature distribution from the cell surface is limited. The authors previously developed and studied a thermocouple array pattern to detect surface temperature distribution on an SOFC in open circuit conditions. In this study, the performance in terms of mechanical durability and oxidation state of the thin film thermoelements of the thermocouple array on the porous SOFC cathode is investigated. A thin-film multi-junction thermocouple array was sputter deposited using a magnetron sputter coater. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterisation techniques were carried out to understand characteristics of the thin film before and after temperature (20 °C–800 °C) measurement. Temperature readings from the sensor agreed well with the closely placed commercial thermocouple during heating segments. However, a sensor failure occurred at around 350 °C during the cooling segment. The SEM and XPS tests revealed cracks on the thin film thermoelements and oxidation to the film thickness direction. PMID:27563893

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Zero energy states at a normal-metal/cuprate-superconductor interface probed by shot noise

NASA Astrophysics Data System (ADS)

Negri, O.; Zaberchik, M.; Drachuck, G.; Keren, A.; Reznikov, M.

2018-06-01

We report measurements of the current noise generated in the optimally doped, x =0.15 , Au-La2-xSrxCuO4 junctions. For high transmission junctions on a (110) surface, we observed a split zero-bias conductance peak (ZBCP), accompanied by enhanced shot noise. We observed no enhanced noise neither in low-transmission junctions on a (110) surface nor in any junction on a (100) surface. We attribute the enhanced noise to Cooper pair transport through the junctions.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

PubMed

Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

2015-09-30

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE PAGES

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; ...

2015-09-09

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Scaling Trapped Ion Quantum Computers Using Fast Gates and Microtraps

NASA Astrophysics Data System (ADS)

Ratcliffe, Alexander K.; Taylor, Richard L.; Hope, Joseph J.; Carvalho, André R. R.

2018-06-01

Most attempts to produce a scalable quantum information processing platform based on ion traps have focused on the shuttling of ions in segmented traps. We show that an architecture based on an array of microtraps with fast gates will outperform architectures based on ion shuttling. This system requires higher power lasers but does not require the manipulation of potentials or shuttling of ions. This improves optical access, reduces the complexity of the trap, and reduces the number of conductive surfaces close to the ions. The use of fast gates also removes limitations on the gate time. Error rates of 10-5 are shown to be possible with 250 mW laser power and a trap separation of 100 μ m . The performance of the gates is shown to be robust to the limitations in the laser repetition rate and the presence of many ions in the trap array.

Single-atom trapping and transport in DMD-controlled optical tweezers

NASA Astrophysics Data System (ADS)

Stuart, Dustin; Kuhn, Axel

2018-02-01

We demonstrate the trapping and manipulation of single neutral atoms in reconfigurable arrays of optical tweezers. Our approach offers unparalleled speed by using a Texas instruments digital micro-mirror device as a holographic amplitude modulator with a frame rate of 20 000 per second. We show the trapping of static arrays of up to 20 atoms, as well as transport of individually selected atoms over a distance of 25 μm with laser cooling and 4 μm without. We discuss the limitations of the technique and the scope for technical improvements.

Colloidal transport through trap arrays controlled by active microswimmers

NASA Astrophysics Data System (ADS)

Yang, Wen; Misko, Vyacheslav R.; Marchesoni, Fabio; Nori, Franco

2018-07-01

We investigate the dynamics of a binary mixture consisting of active and passive colloidal particles diffusing in a 2D array of truncated harmonic wells, or traps. We explore the possibility of using a small fraction of active particles to manipulate a much larger fraction of passive particles, for instance, to confine them in or extract them from the traps. The results of our study have potential application in biology and medical sciences, for example, to remove dead cells or undesired contaminants from biological systems by means of self-propelled nano-robots.

Microfabricated cylindrical ion trap

DOEpatents

Blain, Matthew G.

2005-03-22

A microscale cylindrical ion trap, having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale cylindrical ion trap to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The microscale CIT has a reduced ion mean free path, allowing operation at higher pressures with less expensive and less bulky vacuum pumping system, and with lower battery power than conventional- and miniature-sized ion traps. The reduced electrode voltage enables integration of the microscale cylindrical ion trap with on-chip integrated circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of microscale cylindrical ion traps can be realized in truly field portable, handheld microanalysis systems.

Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon

NASA Astrophysics Data System (ADS)

Ikedo, Akihito; Kawashima, Takahiro; Kawano, Takeshi; Ishida, Makoto

2009-07-01

Repeated vapor-liquid-solid (VLS) growth with Au and PH3-Si2H6 mixture gas as the growth catalyst and silicon source, respectively, was used to construct n-type silicon/n-type silicon wire arrays of various lengths. Silicon wires of various lengths within an array could be grown by employing second growth over the first VLS grown wire. Additionally, the junction at the interface between the first and the second wires were examined. Current-voltage measurements of the wires exhibited linear behavior with a resistance of 850 Ω, confirming nonelectrical barriers at the junction, while bending tests indicated that the mechanical properties of the wire did not change.

High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

2008-11-01

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

Calculation of the force acting on a micro-sized particle with optical vortex array laser beam tweezers

NASA Astrophysics Data System (ADS)

Kuo, Chun-Fu; Chu, Shu-Chun

2013-03-01

Optical vortices possess several special properties, including carrying optical angular momentum (OAM) and exhibiting zero intensity. Vortex array laser beams have attracts many interests due to its special mesh field distributions, which show great potential in the application of multiple optical traps and dark optical traps. Previously study developed an Ince-Gaussian Mode (IGM)-based vortex array laser beam1. This study develops a simulation model based on the discrete dipole approximation (DDA) method for calculating the resultant force acting on a micro-sized spherical dielectric particle that situated at the beam waist of the IGM-based vortex array laser beams1.

Peptide Array X-Linking (PAX): A New Peptide-Protein Identification Approach

PubMed Central

Okada, Hirokazu; Uezu, Akiyoshi; Soderblom, Erik J.; Moseley, M. Arthur; Gertler, Frank B.; Soderling, Scott H.

2012-01-01

Many protein interaction domains bind short peptides based on canonical sequence consensus motifs. Here we report the development of a peptide array-based proteomics tool to identify proteins directly interacting with ligand peptides from cell lysates. Array-formatted bait peptides containing an amino acid-derived cross-linker are photo-induced to crosslink with interacting proteins from lysates of interest. Indirect associations are removed by high stringency washes under denaturing conditions. Covalently trapped proteins are subsequently identified by LC-MS/MS and screened by cluster analysis and domain scanning. We apply this methodology to peptides with different proline-containing consensus sequences and show successful identifications from brain lysates of known and novel proteins containing polyproline motif-binding domains such as EH, EVH1, SH3, WW domains. These results suggest the capacity of arrayed peptide ligands to capture and subsequently identify proteins by mass spectrometry is relatively broad and robust. Additionally, the approach is rapid and applicable to cell or tissue fractions from any source, making the approach a flexible tool for initial protein-protein interaction discovery. PMID:22606326

Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

PubMed

Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig

2012-01-01

Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.

Hierarchical models for estimating density from DNA mark-recapture studies

USGS Publications Warehouse

Gardner, B.; Royle, J. Andrew; Wegan, M.T.

2009-01-01

Genetic sampling is increasingly used as a tool by wildlife biologists and managers to estimate abundance and density of species. Typically, DNA is used to identify individuals captured in an array of traps ( e. g., baited hair snares) from which individual encounter histories are derived. Standard methods for estimating the size of a closed population can be applied to such data. However, due to the movement of individuals on and off the trapping array during sampling, the area over which individuals are exposed to trapping is unknown, and so obtaining unbiased estimates of density has proved difficult. We propose a hierarchical spatial capture-recapture model which contains explicit models for the spatial point process governing the distribution of individuals and their exposure to (via movement) and detection by traps. Detection probability is modeled as a function of each individual's distance to the trap. We applied this model to a black bear (Ursus americanus) study conducted in 2006 using a hair-snare trap array in the Adirondack region of New York, USA. We estimated the density of bears to be 0.159 bears/km2, which is lower than the estimated density (0.410 bears/km2) based on standard closed population techniques. A Bayesian analysis of the model is fully implemented in the software program WinBUGS.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect smooth interface fails to explain such behavior, hence, we apply a modified emission theory with Gaussian distribution of Schottky barrier heights. The modified theory, applicable to inhomogeneous interfaces, explains the temperature dependent behavior of our Schottky junctions and gives a temperature independent mean barrier height. We attribute the inhomogeneous barrier height to the presence of graphene ripples and ridges in case of SiC and MoS2 while surface states and trapped charges at the interface is dominating in Si and GaAs. Additionally, we observe bias dependent current and barrier height in reverse bias regime also for all Schottky junctions. To explain such behavior, we consider two types of reverse bias conduction mechanisms; Poole-Frenkel and Schottky emission. We find that Poole-Frenkel emission explains the characteristics of graphene/SiC junctions very well. However, both the mechanism fails to interpret the behavior of graphene/Si and graphene/GaAs Schottky junctions. These findings provide insight into the fundamental physics at the interface of graphene/semiconductor junctions.

Entomologic studies after a St. Louis encephalitis epidemic in Grand Junction, Colorado.

PubMed

Tasi, T F; Smith, G C; Ndukwu, M; Jakob, W L; Happ, C M; Kirk, L J; Francy, D B; Lampert, K J

1988-08-01

In 1986, after a St. Louis encephalitis epidemic in Grand Junction, Colorado, in 1985, vector mosquitoes in the city were surveyed to correlate their bionomics and infection rates with the occurrence of human disease. No human cases were reported, but mosquito surveillance disclosed St. Louis encephalitis virus in Culex tarsalis and Culex pipiens pipiens. Mosquitoes were collected with gravid traps designed to attract Cx. p. pipiens and with Centers for Disease Control light traps. Culex p. pipiens was the predominant vector mosquito collected and was captured chiefly in gravid traps. The Culex tarsalis population emerged and expanded approximately one month earlier than did the Cx. p. pipiens population. Consequently, Cx. p. pipiens was the predominant vector species after August. Infection rates throughout the surveillance period (June to September) were severalfold higher in Cx. tarsalis than in Cx. p. pipiens; however, in late summer, diminished numbers of Cx. tarsalis and a persistent population of Cx. p. pipiens resulted in relatively larger numbers of infected Cx. p. pipiens. Thus, the participation of Cx. p. pipiens as a St. Louis encephalitis vector would have been underestimated in previous studies employing light traps alone. These studies provide further evidence that Cx. p. pipiens-associated urban St. Louis encephalitis and rural Cx. tarsalis-associated St. Louis encephalitis cycles may coexist in the West.

Microscopic motion of particles flowing through a porous medium

NASA Astrophysics Data System (ADS)

Lee, Jysoo; Koplik, Joel

1999-01-01

Stokesian dynamics simulations are used to study the microscopic motion of particles suspended in fluids passing through porous media. Model porous media with fixed spherical particles are constructed, and mobile ones move through this fixed bed under the action of an ambient velocity field. The pore scale motion of individual suspended particles at pore junctions are first considered. The relative particle flux into different possible directions exiting from a single pore, for two- and three-dimensional model porous media is found to approximately equal the corresponding fractional channel width or area. Next the waiting time distribution for particles which are delayed in a junction due to a stagnation point caused by a flow bifurcation is considered. The waiting times are found to be controlled by two-particle interactions, and the distributions take the same form in model porous media as in two-particle systems. A simple theoretical estimate of the waiting time is consistent with the simulations. It is found that perturbing such a slow-moving particle by another nearby one leads to rather complicated behavior. Finally, the stability of geometrically trapped particles is studied. For simple model traps, it is found that particles passing nearby can "relaunch" the trapped particle through its hydrodynamic interaction, although the conditions for relaunching depend sensitively on the details of the trap and its surroundings.

Periodically striped films produced from super-aligned carbon nanotube arrays.

PubMed

Liu, Kai; Sun, Yinghui; Liu, Peng; Wang, Jiaping; Li, Qunqing; Fan, Shoushan; Jiang, Kaili

2009-08-19

We report a novel way to draw films from super-aligned carbon nanotube arrays at large drawing angles. The obtained super-aligned carbon nanotube films have a periodically striped configuration with alternating thinner and thicker film sections, and the width of the stripes is equal to the height of the original arrays. Compared with ordinary uniform films, the striped films provide a better platform for understanding the mechanism of spinning films from arrays because carbon nanotube junctions are easily observed and identified at the boundary of the stripes. Further studies show that the carbon nanotube junctions are bottleneck positions for thermal conduction and mechanical strength of the film, but do not limit its electrical conduction. These films can be utilized as striped and high-degree polarized light emission sources. Our results will be valuable for new applications and future large-scale production of tunable super-aligned carbon nanotube films.

Vacuum MOCVD fabrication of high efficience cells

NASA Technical Reports Server (NTRS)

Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

1985-01-01

Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

Propulsion and trapping of microparticles by active cilia arrays.

PubMed

Bhattacharya, Amitabh; Buxton, Gavin A; Usta, O Berk; Balazs, Anna C

2012-02-14

We model the transport of a microscopic particle via a regular array of beating elastic cilia, whose tips experience an adhesive interaction with the particle's surface. At optimal adhesion strength, the average particle velocity is maximized. Using simulations spanning a range of cilia stiffness and cilia-particle adhesion strength, we explore the parameter space over which the particle can be "released", "propelled", or "trapped" by the cilia. We use a lower-order model to predict parameters for which the cilia are able to "propel" the particle. This is the first study that shows how both stiffness and adhesion strength are crucial for manipulation of particles by active cilia arrays. These results can facilitate the design of synthetic cilia that integrate adhesive and hydrodynamic interactions to selectively repel or trap particulates. Surfaces that are effective at repelling particulates are valuable for antifouling applications, while surfaces that can trap and, thus, remove particulates from the solution are useful for efficient filtration systems.

Microcalorimeters for High Resolution X-Ray Spectroscopy of Laboratory and Astrophysical Plasmas

NASA Technical Reports Server (NTRS)

Silver, E.; Flowers, Bobby J. (Technical Monitor)

2003-01-01

The proposal has three major objectives. The first focuses on advanced neutron-transmutation-doped (NTD)-based microcalorimeter development. Our goal is to develop an array of microcalorimeters with sub- 5 eV energy resolution that can operate with pile-up-free throughput of at least 100 Hz per pixel. The second objective is to establish our microcalorimeter as an essential x-ray diagnostic for laboratory astrophysics studies. We propose to develop a dedicated microcalorimeter spectrometer for the EBIT (electron beam ion trap). This instrument will incorporate the latest detector and cryogenic technology that we have available. The third objective is to investigate innovative ideas related to possible flight opportunities. These include compact, long lived cryo-systems, ultra-low temperature cold stages, low mass and low power electronics, and novel assemblies of thin windows with high x-ray transmission.

Light trapping and surface plasmon enhanced high-performance NIR photodetector

PubMed Central

Luo, Lin-Bao; Zeng, Long-Hui; Xie, Chao; Yu, Yong-Qiang; Liang, Feng-Xia; Wu, Chun-Yan; Wang, Li; Hu, Ji-Gang

2014-01-01

Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection, and light vision. A high-performance NIR light photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that the AuNPs@graphene/CH3-SiNWs array device is capable of trapping the incident NIR light into the SiNWs array through SPP excitation and coupling in the AuNPs decorated graphene layer. What is more, the coupling and trapping of freely propagating plane waves from free space into the nanostructures, and surface passivation contribute to the high on-off ratio as well. PMID:24468857

A history of gap junction structure: hexagonal arrays to atomic resolution.

PubMed

Grosely, Rosslyn; Sorgen, Paul L

2013-02-01

Gap junctions are specialized membrane structures that provide an intercellular pathway for the propagation and/or amplification of signaling cascades responsible for impulse propagation, cell growth, and development. Prior to the identification of the proteins that comprise gap junctions, elucidation of channel structure began with initial observations of a hexagonal nexus connecting apposed cellular membranes. Concomitant with technological advancements spanning over 50 years, atomic resolution structures are now available detailing channel architecture and the cytoplasmic domains that have helped to define mechanisms governing the regulation of gap junctions. Highlighted in this review are the seminal structural studies that have led to our current understanding of gap junction biology.

Anomalous junctions characterized by Raman spectroscopy in Si{sub x}Ge{sub 1−x} nanowires with axially degraded components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Minggang, E-mail: xiamg@mail.xjtu.edu.cn; Department of Optical Information Science and Technology, School of Science, Xi'an Jiaotong University, 710049; Han, Jinyun

2014-09-08

The characterization of junctions in nanowires by high-resolution transmission electron microscopy with spherical aberration correction is tricky and tedious. Many disadvantages also exist, including rigorous sample preparation and structural damage inflicted by high-energy electrons. In this work, we present a simple, low-cost, and non-destructive Raman spectroscopy method of characterizing anomalous junctions in nanowires with axially degraded components. The Raman spectra of Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are studied in detail using a confocal micro-Raman spectrometer. Three Raman peaks (ν{sub Si–Si} = 490 cm{sup −1}, ν{sub Si–Ge} = 400 cm{sup −1}, and ν{sub Ge–Ge} = 284 cm{sup −1}) up-shift with increased Si content. This up-shift originates inmore » the bond compression induced by a confined effect on the radial direction of nanowire. The anomalous junctions in Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are then observed by Raman spectroscopy and verified by transmission electron microscopy energy-dispersive X-ray spectroscopy. The anomalous junctions of Si{sub x}Ge{sub 1−x} nanowires with axially degraded components are due to the vortex flow of inlet SiH{sub 4} and GeH{sub 4} gas in their synthesis. The anomalous junctions can be used as raw materials for fabricating devices with special functions.« less

Light Trapping with Silicon Light Funnel Arrays

PubMed Central

Nissan, Yuval; Gabay, Tamir; Shalev, Gil

2018-01-01

Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF) arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase). This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization. PMID:29562685

Tunable Nitride Josephson Junctions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Missert, Nancy A.; Henry, Michael David; Lewis, Rupert M.

We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.

Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction

NASA Astrophysics Data System (ADS)

Shin, Ik-Soo; Kim, Jung-Min; Jeun, Jun-Ho; Yoo, Seok-Hyun; Ge, Ziyi; Hong, Jong-In; Ho Bang, Jin; Kim, Yong-Sang

2012-04-01

An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory.

Discreteness-induced resonances and ac voltage amplitudes in long one-dimensional Josephson junction arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duwel, A.E.; Watanabe, S.; Trias, E.

1997-11-01

New resonance steps are found in the experimental current-voltage characteristics of long, discrete, one-dimensional Josephson junction arrays with open boundaries and in an external magnetic field. The junctions are underdamped, connected in parallel, and dc biased. Numerical simulations based on the discrete sine-Gordon model are carried out, and show that the solutions on the steps are periodic trains of fluxons, phase locked by a finite amplitude radiation. Power spectra of the voltages consist of a small number of harmonic peaks, which may be exploited for possible oscillator applications. The steps form a family that can be numbered by the harmonicmore » content of the radiation, the first member corresponding to the Eck step. Discreteness of the arrays is shown to be essential for appearance of the higher order steps. We use a multimode extension of the harmonic balance analysis, and estimate the resonance frequencies, the ac voltage amplitudes, and the theoretical limit on the output power on the first two steps. {copyright} {ital 1997 American Institute of Physics.}« less

A scanning tunneling microscope break junction method with continuous bias modulation.

PubMed

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.

Proposed differential-frequency-readout system by hysteretic Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, L.Z.; Duncan, R.V.

1992-10-01

The Josephson relation {ital V}={ital nh}{nu}/2{ital e} has been verified experimentally to 3 parts in 10{sup 19} (A. K. Jain, J. E. Lukens, and J.-S. Tsai, Phys. Rev. Lett. 58, 1165 (1987)). Motivated by this result, we propose a differential-frequency-readout system by two sets of hysteretic Josephson junctions rf biased at millimeter wavelengths. Because of the Josephson relation, the proposed differential-frequency-readout system is not limited by photon fluctuation, which limits most photon-detection schemes. In the context of the Stewart-McCumber model (W. C. Stewart, Appl. Phys. Lett. 12, 277 (1968); D. E. McCumber, J. Appl. Phys. 39, 3113 (1968)) of Josephsonmore » junctions, we show theoretically that the differential frequency of the two milliwave biases can be read out by the proposed system to unprecedented accuracy. The stability of the readout scheme is also discussed. The measurement uncertainty of the readout system resulting from the intrinsic thermal noise in the hysteretic junctions is shown to be insignificant. The study of two single junctions can be extended to two sets of Josephson junctions connected in series (series array) in this measurement scheme provided that junctions are separated by at least 10 {mu}m (D. W. Jillie, J. E. Lukens, and Y. H. Kao, Phys. Rev. Lett. 38, 915 (1977)). The sensitivity for the differential frequency detection may be increased by biasing both series arrays to a higher constant-voltage step.« less

Phase and vortex correlations in superconducting Josephson-junction arrays at irrational magnetic frustration.

PubMed

Granato, Enzo

2008-07-11

Phase coherence and vortex order in a Josephson-junction array at irrational frustration are studied by extensive Monte Carlo simulations using the parallel-tempering method. A scaling analysis of the correlation length of phase variables in the full equilibrated system shows that the critical temperature vanishes with a power-law divergent correlation length and critical exponent nuph, in agreement with recent results from resistivity scaling analysis. A similar scaling analysis for vortex variables reveals a different critical exponent nuv, suggesting that there are two distinct correlation lengths associated with a decoupled zero-temperature phase transition.

Vortex dynamics in two-dimensional Josephson junction arrays

NASA Astrophysics Data System (ADS)

Ashrafuzzaman, Md.; Capezzali, Massimiliano; Beck, Hans

2003-08-01

The dynamic response of two-dimensional Josephson junction arrays close to, but above the Berezinskii-Kosterlitz-Thouless (BKT) transition temperature is described in terms of the vortex dielectric function ɛ(ω) and the flux noise spectrum Sφ(ω). They are calculated by considering both the contributions of free vortices interacting through a screened Coulomb potential and the pair motion of vortices that are closer to each other than the BKT correlation length. This procedure allows us to understand various anomalous features in ɛ(ω) and in Sφ(ω) that have been observed both experimentally and in dynamic simulations.

Evaluation of two counterflow traps for testing behaviour-mediating compounds for the malaria vector Anopheles gambiae s.s. under semi-field conditions in Tanzania

PubMed Central

Schmied, Wolfgang H; Takken, Willem; Killeen, Gerry F; Knols, Bart GJ; Smallegange, Renate C

2008-01-01

Background Evaluation of mosquito responses towards different trap-bait combinations in field trials is a time-consuming process that can be shortened by experiments in contained semi-field systems. Possible use of the BG Sentinel (BGS) trap to sample Anopheles gambiae s.s. was evaluated. The efficiency of this trap was compared with that of the Mosquito Magnet-X (MM-X) trap, when baited with foot odour alone or combinations of foot odour with carbon dioxide (CO2) or lemongrass as behaviour-modifying cues. Methods Female An. gambiae s.s. were released in an experimental flight arena that was placed in a semi-field system and left overnight. Catch rates for the MM-X and BGS traps were recorded. Data were analysed by fitting a generalized linear model to the (n+1) transformed catches. Results Both types of traps successfully captured mosquitoes with all odour cues used. When the BGS trap was tested against the MM-X trap in a choice assay with foot odour as bait, the BGS trap caught about three times as many mosquitoes as the MM-X trap (P = 0.002). Adding CO2 (500 ml/min) to foot odour increased the number of mosquitoes caught by 268% for the MM-X (P < 0.001) and 34% (P = 0.051) for the BGS trap, compared to foot odour alone. When lemongrass leaves were added to foot odour, mosquito catches were reduced by 39% (BGS, P < 0.001) and 38% (MM-X, P = 0.353), respectively. Conclusion The BGS trap shows high potential for field trials due to its simple construction and high catch rate when baited with human foot odour only. However, for rapid screening of different baits in a contained semi-field system, the superior discriminatory power of the MM-X trap is advantageous. PMID:18980669

Controllable Quantum States Mesoscopic Superconductivity and Spintronics (MS+S2006)

NASA Astrophysics Data System (ADS)

Takayanagi, Hideaki; Nitta, Junsaku; Nakano, Hayato

2008-10-01

Mesoscopic effects in superconductors. Tunneling measurements of charge imbalance of non-equilibrium superconductors / R. Yagi. Influence of magnetic impurities on Josephson current in SNS junctions / T. Yokoyama. Nonlinear response and observable signatures of equilibrium entanglement / A. M. Zagoskin. Stimulated Raman adiabatic passage with a Cooper pair box / Giuseppe Falci. Crossed Andreev reflection-induced giant negative magnetoresistance / Francesco Giazotto -- Quantum modulation of superconducting junctions. Adiabatic pumping through a Josephson weak link / Fabio Taddei. Squeezing of superconducting qubits / Kazutomu Shiokawa. Detection of Berrys phases in flux qubits with coherent pulses / D. N. Zheng. Probing entanglement in the system of coupled Josephson qubits / A. S. Kiyko. Josephson junction with tunable damping using quasi-particle injection / Ryuta Yagi. Macroscopic quantum coherence in rf-SQUIDs / Alexey V. Ustinov. Bloch oscillations in a Josephson circuit / D. Esteve. Manipulation of magnetization in nonequilibrium superconducting nanostructures / F. Giazotto -- Superconducting qubits. Decoherence and Rabi oscillations in a qubit coupled to a quantum two-level system / Sahel Ashhab. Phase-coupled flux qubits: CNOT operation, controllable coupling and entanglement / Mun Dae Kim. Characteristics of a switchable superconducting flux transformer with a DC-SQUID / Yoshihiro Shimazu. Characterization of adiabatic noise in charge-based coherent nanodevices / E. Paladino -- Unconventional superconductors. Threshold temperatures of zero-bias conductance peak and zero-bias conductance dip in diffusive normal metal/superconductor junctions / Iduru Shigeta. Tunneling conductance in 2DEG/S junctions in the presence of Rashba spin-orbit coupling / T. Yokoyama. Theory of charge transport in diffusive ferromagnet/p-wave superconductor junctions / T. Yokoyama. Theory of enhanced proximity effect by the exchange field in FS bilayers / T. Yokoyama. Theory of Josephson effect in diffusive d-wave junctions / T. Yokoyama. Quantum dissipation due to the zero energy bound states in high-T[symbol] superconductor junctions / Shiro Kawabata. Spin-polarized heat transport in ferromagnet/unconventional superconductor junctions / T. Yokoyama. Little-Parks oscillations in chiral p-wave superconducting rings / Mitsuaki Takigawa. Theoretical study of synergy effect between proximity effect and Andreev interface resonant states in triplet p-wave superconductors / Yasunari Tanuma. Theory of proximity effect in unconventional superconductor junctions / Y. Tanaka -- Quantum information. Analyzing the effectiveness of the quantum repeater / Kenichiro Furuta. Architecture-dependent execution time of Shor's algorithm / Rodney Van Meter -- Quantum dots and Kondo effects. Coulomb blockade properties of 4-gated quantum dot / Shinichi Amaha. Order-N electronic structure calculation of n-type GaAs quantum dots / Shintaro Nomura. Transport through double-dots coupled to normal and superconducting leads / Yoichi Tanaka. A study of the quantum dot in application to terahertz single photon counting / Vladimir Antonov. Electron transport through laterally coupled double quantum dots / T. Kubo. Dephasing in Kondo systems: comparison between theory and experiment / F. Mallet. Kondo effect in quantum dots coupled with noncollinear ferromagnetic leads / Daisuke Matsubayashi. Non-crossing approximation study of multi-orbital Kondo effect in quantum dot systems / Tomoko Kita. Theoretical study of electronic states and spin operation in coupled quantum dots / Mikio Eto. Spin correlation in a double quantum dot-quantum wire coupled system / S. Sasaki. Kondo-assisted transport through a multiorbital quantum dot / Rui Sakano. Spin decay in a quantum dot coupled to a quantum point contact / Massoud Borhani -- Quantum wires, low-dimensional electrons. Control of the electron density and electric field with front and back gates / Masumi Yamaguchi. Effect of the array distance on the magnetization configuration of submicron-sized ferromagnetic rings / Tetsuya Miyawaki. A wide GaAs/GaAlAs quantum well simultaneously containing two dimensional electrons and holes / Ane Jensen. Simulation of the photon-spin quantum state transfer process / Yoshiaki Rikitake. Magnetotransport in two-dimensional electron gases on cylindrical surface / Friedland Klaus-Juergen. Full counting statistics for a single-electron transistor at intermediate conductance / Yasuhiro Utsumi. Creation of spin-polarized current using quantum point contacts and its detection / Mikio Eto. Density dependent electron effective mass in a back-gated quantum well / S. Nomura. The supersymmetric sigma formula and metal-insulator transition in diluted magnetic semiconductors / I. Kanazawa. Spin-photovoltaic effect in quantum wires / A. Fedorov -- Quantum interference. Nonequilibrium transport in Aharonov-Bohm interferometer with electron-phonon interaction / Akiko Ueda. Fano resonance and its breakdown in AB ring embedded with a molecule / Shigeo Fujimoto, Yuhei Natsume. Quantum resonance above a barrier in the presence of dissipation / Kohkichi Konno. Ensemble averaging in metallic quantum networks / F. Mallet -- Coherence and order in exotic materials. Progress towards an electronic array on liquid helium / David Rees. Measuring noise and cross correlations at high frequencies in nanophysics / T. Martin. Single wall carbon nanotube weak links / K. Grove-Rasmussen. Optical preparation of nuclear spins coupled to a localized electron spin / Guido Burkard. Topological effects in charge density wave dynamics / Toru Matsuura. Studies on nanoscale charge-density-wave systems: fabrication technique and transport phenomena / Katsuhiko Inagaki. Anisotropic behavior of hysteresis induced by the in-plane field in the v = 2/3 quantum Hall state / Kazuki Iwata. Phase diagram of the v = 2 bilayer quantum Hall state / Akira Fukuda -- Trapped ions (special talk). Quantum computation with trapped ions / Hartmut Häffner.

Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Cheng-Han; Wu, Chao-Hsin, E-mail: chaohsinwu@ntu.edu.tw; Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

NASA Astrophysics Data System (ADS)

Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro

2018-06-01

The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.

Trapped Atoms in One-Dimensional Photonic Crystals

DTIC Science & Technology

2013-08-09

a single silicon -nitride nanobeam (refractive index n = 2) with a 1D array of filleted rectangular holes along the propagation direction; atoms are...trapped in the centers of the holes (figure 1( a )). The second waveguide consists of two parallel silicon nitride nanobeams, each with a periodic array...the refractive index of silicon nitride is approximately constant across the optical domain, we adopt the approximation based on a frequency

Single-molecule dynamics in nanofabricated traps

NASA Astrophysics Data System (ADS)

Cohen, Adam

2009-03-01

The Anti-Brownian Electrokinetic trap (ABEL trap) provides a means to immobilize a single fluorescent molecule in solution, without surface attachment chemistry. The ABEL trap works by tracking the Brownian motion of a single molecule, and applying feedback electric fields to induce an electrokinetic motion that approximately cancels the Brownian motion. We present a new design for the ABEL trap that allows smaller molecules to be trapped and more information to be extracted from the dynamics of a single molecule than was previously possible. In particular, we present strategies for extracting dynamically fluctuating mobilities and diffusion coefficients, as a means to probe dynamic changes in molecular charge and shape. If one trapped molecule is good, many trapped molecules are better. An array of single molecules in solution, each immobilized without surface attachment chemistry, provides an ideal test-bed for single-molecule analyses of intramolecular dynamics and intermolecular interactions. We present a technology for creating such an array, using a fused silica plate with nanofabricated dimples and a removable cover for sealing single molecules within the dimples. With this device one can watch the shape fluctuations of single molecules of DNA or study cooperative interactions in weakly associating protein complexes.

Kelvin probe imaging of photo-injected electrons in metal oxide nanosheets from metal sulfide quantum dots under remote photochromic coloration

NASA Astrophysics Data System (ADS)

Kondo, A.; Yin, G.; Srinivasan, N.; Atarashi, D.; Sakai, E.; Miyauchi, M.

2015-07-01

Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O362- nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O362- nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O362- nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W5+ species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O362- nanosheet to form color centers. Further, the CdS QDs and Cs4W11O362- nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems.Metal oxide and quantum dot (QD) heterostructures have attracted considerable recent attention as materials for developing efficient solar cells, photocatalysts, and display devices, thus nanoscale imaging of trapped electrons in these heterostructures provides important insight for developing efficient devices. In the present study, Kelvin probe force microscopy (KPFM) of CdS quantum dot (QD)-grafted Cs4W11O362- nanosheets was performed before and after visible-light irradiation. After visible-light excitation of the CdS QDs, the Cs4W11O362- nanosheet surface exhibited a decreased work function in the vicinity of the junction with CdS QDs, even though the Cs4W11O362- nanosheet did not absorb visible light. X-ray photoelectron spectroscopy revealed that W5+ species were formed in the nanosheet after visible-light irradiation. These results demonstrated that excited electrons in the CdS QDs were injected and trapped in the Cs4W11O362- nanosheet to form color centers. Further, the CdS QDs and Cs4W11O362- nanosheet composite films exhibited efficient remote photochromic coloration, which was attributed to the quantum nanostructure of the film. Notably, the responsive wavelength of the material is tunable by adjusting the size of QDs, and the decoloration rate is highly efficient, as the required length for trapped electrons to diffuse into the nanosheet surface is very short owing to its nanoscale thickness. The unique properties of this photochromic device make it suitable for display or memory applications. In addition, the methodology described in the present study for nanoscale imaging is expected to aid in the understanding of electron transport and trapping processes in metal oxide and metal chalcogenide heterostructure, which are crucial phenomena in QD-based solar cells and/or photocatalytic water-splitting systems. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02405f

Mechanisms of Current Flow in the Diode Structure with an n + - p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

NASA Astrophysics Data System (ADS)

Tregulov, V. V.; Litvinov, V. G.; Ermachikhin, A. V.

2018-01-01

Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n + -p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.

Low-dark current 1024×1280 InGaAs PIN arrays

NASA Astrophysics Data System (ADS)

Yuan, Ping; Chang, James; Boisvert, Joseph C.; Karam, Nasser

2014-06-01

Photon counting imaging applications requires low noise from both detector and readout integrated circuit (ROIC) arrays. In order to retain the photon-counting-level sensitivity, a long integration time has to be employed and the dark current has to be minimized. It is well known that the PIN dark current is sensitive to temperature and a dark current density of 0.5 nA/cm2 was demonstrated at 7 °C previously. In order to restrain the size, weight, and power consumption (SWaP) of cameras for persistent large-area surveillance on small platforms, it is critical to develop large format PIN arrays with small pitch and low dark current density at higher operation temperatures. Recently Spectrolab has grown, fabricated and tested 1024x1280 InGaAs PIN arrays with 12.5 μm pitch and achieved 0.7 nA/cm2 dark current density at 15 °C. Based on our previous low-dark-current PIN designs, the improvements were focused on 1) the epitaxial material design and growth control; and 2) PIN device structure to minimize the perimeter leakage current and junction diffusion current. We will present characterization data and analyses that illustrate the contribution of various dark current mechanisms.

Semiconductor Lasers Containing Quantum Wells in Junctions

NASA Technical Reports Server (NTRS)

Yang, Rui Q.; Qiu, Yueming

2004-01-01

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies

NASA Astrophysics Data System (ADS)

Spurgeon, Joshua Michael

Despite demand for clean energy to reduce our addiction to fossil fuels, the price of these technologies relative to oil and coal has prevented their widespread implementation. Solar energy has enormous potential as a carbon-free resource but is several times the cost of coal-produced electricity, largely because photovoltaics of practical efficiency require high-quality, pure semiconductor materials. To produce current in a planar junction solar cell, an electron or hole generated deep within the material must travel all the way to the junction without recombining. Radial junction, wire array solar cells, however, have the potential to decouple the directions of light absorption and charge-carrier collection so that a semiconductor with a minority-carrier diffusion length shorter than its absorption depth (i.e., a lower quality, potentially cheaper material) can effectively produce current. The axial dimension of the wires is long enough for sufficient optical absorption while the charge-carriers are collected along the shorter radial dimension in a massively parallel array. This thesis explores the wire array solar cell design by developing potentially low-cost fabrication methods and investigating the energy-conversion properties of the arrays in photoelectrochemical cells. The concept was initially investigated with Cd(Se, Te) rod arrays; however, Si was the primary focus of wire array research because its semiconductor properties make low-quality Si an ideal candidate for improvement in a radial geometry. Fabrication routes for Si wire arrays were explored, including the vapor-liquid-solid growth of wires using SiCl4. Uniform, vertically aligned Si wires were demonstrated in a process that permits control of the wire radius, length, and spacing. A technique was developed to transfer these wire arrays into a low-cost, flexible polymer film, and grow multiple subsequent arrays using a single Si(111) substrate. Photoelectrochemical measurements on Si wire array/polymer composite films showed that their energy-conversion properties were comparable to those of an array attached to the growth substrate. High quantum efficiencies were observed relative to the packing density of the wires, particularly with illumination at high angles of incidence. The results indicate that an inexpensive, solid-state Si wire array solar cell is possible, and a plan is presented to develop one.

The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

PubMed Central

Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

2013-01-01

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction. PMID:24194676

The effect of metal-semiconductor contact on the transient photovoltaic characteristic of HgCdTe PV detector.

PubMed

Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

2013-01-01

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

PubMed Central

Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

2015-01-01

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

Performance of the EBIT calorimeter spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porter, Frederick Scott; Gygax, John; Kelley, Richard L.

The EBIT calorimeter spectrometer (ECS) is a new high-resolution, broadband x-ray spectrometer that has recently been installed at the Electron Beam Ion Trap Facility (EBIT) at the Lawrence Livermore National Laboratory. The ECS is an entirely new production class spectrometer that replaces the XRS/EBIT spectrometer that has been operating at EBIT since 2000. The ECS utilizes a 32-pixel x-ray calorimeter array from the XRS instrument on the Suzaku x-ray observatory. Eighteen of the pixels are optimized for the 0.1-10 keV band and yield 4.5 eV full width at half maximum energy resolution and 95% quantum efficiency at 6 keV. Inmore » addition, the ECS includes 14 detector pixels that are optimized for the high-energy band with a bandpass from 0.5 to over 100 keV with 34 eV resolution and 32% quantum efficiency at 60 keV. The ECS detector array is operated at 50 mK using a five stage cryogenic system that is entirely automated. The instrument takes data continuously for over 65 h with a 2.5 h recycle time. The ECS is a nondispersive, broadband, highly efficient spectrometer that is one of the prime instruments at the EBIT facility. The instrument is used for studies of absolute cross sections, charge exchange recombination, and x-ray emission from nonequilibrium plasmas, among other measurements in our laboratory astrophysics program.« less

Excitation of a Parallel Plate Waveguide by an Array of Rectangular Waveguides

NASA Technical Reports Server (NTRS)

Rengarajan, Sembiam

2011-01-01

This work addresses the problem of excitation of a parallel plate waveguide by an array of rectangular waveguides that arises in applications such as the continuous transverse stub (CTS) antenna and dual-polarized parabolic cylindrical reflector antennas excited by a scanning line source. In order to design the junction region between the parallel plate waveguide and the linear array of rectangular waveguides, waveguide sizes have to be chosen so that the input match is adequate for the range of scan angles for both polarizations. Electromagnetic wave scattered by the junction of a parallel plate waveguide by an array of rectangular waveguides is analyzed by formulating coupled integral equations for the aperture electric field at the junction. The integral equations are solved by the method of moments. In order to make the computational process efficient and accurate, the method of weighted averaging was used to evaluate rapidly oscillating integrals encountered in the moment matrix. In addition, the real axis spectral integral is evaluated in a deformed contour for speed and accuracy. The MoM results for a large finite array have been validated by comparing its reflection coefficients with corresponding results for an infinite array generated by the commercial finite element code, HFSS. Once the aperture electric field is determined by MoM, the input reflection coefficients at each waveguide port, and coupling for each polarization over the range of useful scan angles, are easily obtained. Results for the input impedance and coupling characteristics for both the vertical and horizontal polarizations are presented over a range of scan angles. It is shown that the scan range is limited to about 35 for both polarizations and therefore the optimum waveguide is a square of size equal to about 0.62 free space wavelength.

An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yingge; Li, Chen; Zhang, Kelvin H. L.

2017-08-07

Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO 3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

Solid state image sensing arrays

NASA Technical Reports Server (NTRS)

Sadasiv, G.

1972-01-01

The fabrication of a photodiode transistor image sensor array in silicon, and tests on individual elements of the array are described along with design for a scanning system for an image sensor array. The spectral response of p-n junctions was used as a technique for studying the optical-absorption edge in silicon. Heterojunction structures of Sb2S3- Si were fabricated and a system for measuring C-V curves on MOS structures was built.

Novel anti-reflection technology for GaAs single-junction solar cells using surface patterning and Au nanoparticles.

PubMed

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Kim, Sangin; Rotermund, Fabian; Lim, Hanjo; Lee, Jaejin

2012-07-01

Single-junction GaAs solar cell structures were grown by low-pressure MOCVD on GaAs (100) substrates. Micro-rod arrays with diameters of 2 microm, 5 microm, and 10 microm were fabricated on the surfaces of the GaAs solar cells via photolithography and wet chemical etching. The patterned surfaces were coated with Au nanoparticles using an Au colloidal solution. Characteristics of the GaAs solar cells with and without the micro-rod arrays and Au nanoparticles were investigated. The short-circuit current density of the GaAs solar cell with 2 microm rod arrays and Au nanoparticles increased up to 34.9% compared to that of the reference cell without micro-rod arrays and Au nanoparticles. The conversion efficiency of the GaAs solar cell that was coated with Au nanoparticles on the patterned surface with micro-rod arrays can be improved from 14.1% to 19.9% under 1 sun AM 1.5G illumination. These results show that micro-rod arrays and Au nanoparticle coating can be applied together in surface patterning to achieve a novel cost-effective anti-reflection technology.

Photovoltaic Power for Future NASA Missions

NASA Technical Reports Server (NTRS)

Landis, Geoffrey; Bailey, Sheila G.; Lyons, Valerie J. (Technical Monitor)

2002-01-01

Recent advances in crystalline solar cell technology are reviewed. Dual-junction and triple-junction solar cells are presently available from several U. S. vendors. Commercially available triple-junction cells consisting of GaInP, GaAs, and Ge layers can produce up to 27% conversion efficiency in production lots. Technology status and performance figures of merit for currently available photovoltaic arrays are discussed. Three specific NASA mission applications are discussed in detail: Mars surface applications, high temperature solar cell applications, and integrated microelectronic power supplies for nanosatellites.

Modeling the Effects of Varying the Capacitance, Resistance, Temperature, and Frequency Dependence for HTS Josephson Junctions, DC SQUIDs and DC bi-SQUIDS

DTIC Science & Technology

2014-09-01

junction is a thin layer of insulating material sep- arating two superconductors that is thin enough for electrons to tunnel through. Two Josephson...can sense minute magnetic fields approaching 1015 Tesla. These SQUIDs can be arranged in arrays with different coupling schemes and parameter values to...different material and/or method on the bisecting Josephson junction for high temperature superconductor (HTS) YBa2Cu3O7 (YBCO) bi-SQUIDs. This

Towards lightweight and flexible high performance nanocrystalline silicon solar cells through light trapping and transport layers

NASA Astrophysics Data System (ADS)

Gray, Zachary R.

This thesis investigates ways to enhance the efficiency of thin film solar cells through the application of both novel nano-element array light trapping architectures and nickel oxide hole transport/electron blocking layers. Experimental results independently demonstrate a 22% enhancement in short circuit current density (JSC) resulting from a nano-element array light trapping architecture and a ˜23% enhancement in fill factor (FF) and ˜16% enhancement in open circuit voltage (VOC) resulting from a nickel oxide transport layer. In each case, the overall efficiency of the device employing the light trapping or transport layer was superior to that of the corresponding control device. Since the efficiency of a solar cell scales with the product of JSC, FF, and VOC, it follows that the results of this thesis suggest high performance thin film solar cells can be realized in the event light trapping architectures and transport layers can be simultaneously optimized. The realizations of these performance enhancements stem from extensive process optimization for numerous light trapping and transport layer fabrication approaches. These approaches were guided by numerical modeling techniques which will also be discussed. Key developments in this thesis include (1) the fabrication of nano-element topographies conducive to light trapping using various fabrication approaches, (2) the deposition of defect free nc-Si:H onto structured topographies by switching from SiH4 to SiF 4 PECVD gas chemistry, and (3) the development of the atomic layer deposition (ALD) growth conditions for NiO. Keywords: light trapping, nano-element array, hole transport layer, electron blocking layer, nickel oxide, nanocrystalline silicon, aluminum doped zinc oxide, atomic layer deposition, plasma enhanced chemical vapor deposition, electron beam lithography, ANSYS HFSS.

Infrared focal plane performance in the South Atlantic anomaly

NASA Technical Reports Server (NTRS)

Junga, Frank A.

1989-01-01

Proton-induced pulse height distributions (PHD's) in Si:XX detectors were studied analytically and experimentally. In addition, a preliminary design for a flight experiment to characterize the response of Si:XX detectors to the trapped proton environment and verify PHD models was developed. PHD's were computed for two orbit altitudes for a variety of shielding configurations. Most of the proton-induced pulses have amplitudes less that about 3.5 x 10(exp 5) e-h pairs. Shielding has a small effect on the shape of the PHD's. The primary effect of shielding is to reduce the total number of pulses produced. Proton-induced PHD's in a Si:Sb focal plane array bombarded by a unidirectional 67-MeV beam were measured. The maximum pulse height recorded was 6 x 10(exp 5) pairs. The distribution had two peaks: the larger peak corresponded to 3.8 x 10(exp 5) pairs and the smaller peak to 1.2 x 10(exp 5) pairs. The maximum pulse height and the larger peak are within a factor of two of predicted values. The low-energy peak was not expected, but is believed to be an artifact of inefficient charge collection in the detector. The planned flight experiment will be conducted on a Space Shuttle flight. Lockheed's helium extended life dewar (HELD) will be used to provide the required cryogenic environment for the detector. Two bulk Si:Sb arrays and two Si:As impurity band conduction arrays will be tested. The tests will be conducted while the Space Shuttle passes through the South Atlantic Anomaly. PHD's will be recorded and responsivity changes tracked. This experiment will provide a new database on proton-induced PHD's, compare two infrared detector technologies in a space environment, and provide the data necessary to validate PHD modeling.

SPATIALLY EXTENDED 21 cm SIGNAL FROM STRONGLY CLUSTERED UV AND X-RAY SOURCES IN THE EARLY UNIVERSE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Kyungjin; Xu, Hao; Norman, Michael L.

2015-03-20

We present our prediction for the local 21 cm differential brightness temperature (δT{sub b}) from a set of strongly clustered sources of Population III (Pop III) and II (Pop II) objects in the early universe, by a numerical simulation of their formation and radiative feedback. These objects are located inside a highly biased environment, which is a rare, high-density peak (“Rarepeak”) extending to ∼7 comoving Mpc. We study the impact of ultraviolet and X-ray photons on the intergalactic medium (IGM) and the resulting δT{sub b}, when Pop III stars are assumed to emit X-ray photons by forming X-ray binaries verymore » efficiently. We parameterize the rest-frame spectral energy distribution of X-ray photons, which regulates X-ray photon-trapping, IGM-heating, secondary Lyα pumping and the resulting morphology of δT{sub b}. A combination of emission (δT{sub b} > 0) and absorption (δT{sub b} < 0) regions appears in varying amplitudes and angular scales. The boost of the signal by the high-density environment (δ ∼ 0.64) and on a relatively large scale combines to make Rarepeak a discernible, spatially extended (θ ∼ 10′) object for 21 cm observation at 13 ≲ z ≲ 17, which is found to be detectable as a single object by SKA with integration time of ∼1000 hr. Power spectrum analysis by some of the SKA precursors (Low Frequency Array, Murchison Widefield Array, Precision Array for Probing the Epoch of Reionization) of such rare peaks is found to be difficult due to the rarity of these peaks, and the contribution only by these rare peaks to the total power spectrum remains subdominant compared to that by all astrophysical sources.« less

Programmable micrometer-sized motor array based on live cells.

PubMed

Xie, Shuangxi; Wang, Xiaodong; Jiao, Niandong; Tung, Steve; Liu, Lianqing

2017-06-13

Trapping and transporting microorganisms with intrinsic motility are important tasks for biological, physical, and biomedical applications. However, fast swimming speed makes the manipulation of these organisms an inherently challenging task. In this study, we demonstrated that an optoelectrical technique, namely, optically induced dielectrophoresis (ODEP), could effectively trap and manipulate Chlamydomonas reinhardtii (C. reinhardtii) cells swimming at velocities faster than 100 μm s -1 . Furthermore, live C. reinhardtii cells trapped by ODEP can form a micrometer-sized motor array. The rotating frequency of the cells ranges from 50 to 120 rpm, which can be reversibly adjusted with a fast response speed by varying the optical intensity. Functional flagella have been demonstrated to play a decisive role in the rotation. The programmable cell array with a rotating motion can be used as a bio-micropump to drive the liquid flow in microfludic chips and may shed new light on bio-actuation.

Kinetic Inductance Memory Cell and Architecture for Superconducting Computers

NASA Astrophysics Data System (ADS)

Chen, George J.

Josephson memory devices typically use a superconducting loop containing one or more Josephson junctions to store information. The magnetic inductance of the loop in conjunction with the Josephson junctions provides multiple states to store data. This thesis shows that replacing the magnetic inductor in a memory cell with a kinetic inductor can lead to a smaller cell size. However, magnetic control of the cells is lost. Thus, a current-injection based architecture for a memory array has been designed to work around this problem. The isolation between memory cells that magnetic control provides is provided through resistors in this new architecture. However, these resistors allow leakage current to flow which ultimately limits the size of the array due to power considerations. A kinetic inductance memory array will be limited to 4K bits with a read access time of 320 ps for a 1 um linewidth technology. If a power decoder could be developed, the memory architecture could serve as the blueprint for a fast (<1 ns), large scale (>1 Mbit) superconducting memory array.

Design, fabrication and test of a pneumatically controlled, renewable, microfluidic bead trapping device for sequential injection analysis applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Guocheng; Lu, Donglai; Fu, Zhifeng

This paper describes the design, fabrication, and testing of a pneumatically controlled,renewable, microfluidic device for conducting bead-based assays in an automated sequential injection analysis system. The device used a “brick wall”-like pillar array (pillar size: 20 μm length X 50 μm width X 45 μm height) with 5 μm gaps between the pillars serving as the micro filter. The flow channel where bead trapping occurred is 500 μm wide X 75 μm deep. An elastomeric membrane and an air chamber were located underneath the flow channel. By applying pressure to the air chamber, the membrane is deformed and pushed upwardmore » against the filter structure. This effectively traps beads larger than 5 μm and creates a “bed” or micro column of beads that can be perfused and washed with liquid samples and reagents. Upon completion of the assay process, the pressure is released and the beads are flushed out from underneath the filter structure to renew the device. Mouse IgG was used as a model analyte to test the feasibility of using the proposed device for immunoassay applications. Resulting microbeads from an on-chip fluorescent immunoassay were individually examined using flow cytometry. The results show that the fluorescence signal intensity distribution is fairly narrow indicating high chemical reaction uniformity among the beads population. Electrochemical onchip assay was also conducted. A detection limit of 0.1 ng/mL1 ppb was achieved and good device reliability and repeatability were demonstrated. The novel microfluidic-based beadstrapping device thus opens up a new pathway to design micro-bead based biosensor immunoassays for clinical and othervarious applications.« less

Plasmonic nanorod arrays of a two-segment dimer and a coaxial cable with 1 nm gap for large field confinement and enhancement.

PubMed

Cheng, Zi-Qiang; Nan, Fan; Yang, Da-Jie; Zhong, Yu-Ting; Ma, Liang; Hao, Zhong-Hua; Zhou, Li; Wang, Qu-Quan

2015-01-28

Seeking plasmonic nanostructures with large field confinement and enhancement is significant for photonic and electronic nanodevices with high sensitivity, reproducibility, and tunability. Here, we report the synthesis of plasmonic arrays composed of two-segment dimer nanorods and coaxial cable nanorods with ∼1 nm gap insulated by a self-assembled Raman molecule monolayer. The gap-induced plasmon coupling generates an intense field in the gap region of the dimer junction and the cable interlayer. As a result, the longitudinal plasmon resonance of nanorod arrays with high tunability is obviously enhanced. Most interestingly, the field enhancement of dimer nanorod arrays can be tuned by the length ratio L1/L2 of the two segments, and the maximal enhancement appears at L1/L2 = 1. In that case, the two-photon luminescence (TPL) of dimer nanorod arrays and the Raman intensity in the dimer junction is enhanced by 27 and 30 times, respectively, under resonant excitation. In the same way, the Raman intensity in the gap region is enhanced 16 times for the coaxial cable nanorod arrays. The plasmonic nanorod arrays synthesized by the facile method, having tunable plasmon properties and large field enhancement, indicate an attractive pathway to the photonic nanodevices.

Unpaired Majorana modes in Josephson-Junction Arrays with gapless bulk excitations

DOE PAGES

Pino, M.; Tsvelik, A.; Ioffe, L. B.

2015-11-06

In this study, the search for Majorana bound states in solid-state physics has been limited to materials that display a gap in their bulk spectrum. We show that such unpaired states appear in certain quasi-one-dimensional Josephson-junction arrays with gapless bulk excitations. The bulk modes mediate a coupling between Majorana bound states via the Ruderman-Kittel-Yosida-Kasuya mechanism. As a consequence, the lowest energy doublet acquires a finite energy difference. For a realistic set of parameters this energy splitting remains much smaller than the energy of the bulk eigenstates even for short chains of length L~10.

Bistability in Josephson Junction array resonator

NASA Astrophysics Data System (ADS)

Muppalla, Phani Raja; Alexandre Blais Collaboration; Christian Kraglund Andersen Collaboration; Ioan Pop, Lukas Gruenhaupt Collaboration; Michel Devoret Collaboration; Oscar Garguilo, Gerhard Kirchmair Team

``We present an experimental analysis of the Kerr effect of extended plasma resonances in a 1000 Josephson junction (JJ) chain resonator inside a rectangular waveguide. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. We study the bistable behavior, using a pump probe scheme on two modes of the JJ array, exploiting the Cross-Kerr effect in our system. In order to understand the behavior of the bi-stability we perform continuous time measurements to observe the switching between the two metastable states. We observe a strong dependence of the switching rates on the photon number and the drive frequency.''

Soft-state biomicrofluidic pulse generator for single cell analysis

NASA Astrophysics Data System (ADS)

Sabounchi, Poorya; Ionescu-Zanetti, Cristian; Chen, Roger; Karandikar, Manjiree; Seo, Jeonggi; Lee, Luke P.

2006-05-01

We present the design, fabrication, and characterization of a soft-state biomicrofluidic pulse generator for single cell analysis. Hydrodynamic cell trapping via lateral microfluidic junctions allows the trapping of single cells from a bulk suspension. Microfluidic injection sites adjacent to the cell-trapping channels enable the pulsed delivery of nanoliter volumes of biochemical reagent. We demonstrated the application and removal of reagent at a frequency of 10Hz with a rise time of less than 33ms and a reagent consumption rate of 0.2nL/s. It is shown that this system operates as a low-pass filter with a cutoff frequency of 7Hz.

A Comparison of Herpetofaunal Sampling Effectiveness of Pitfall, Single-ended, and Double-ended Funnel Traps Used with Drift Fences

Treesearch

Cathryn H. Greenberg; Daniel G. Neary; Larry D. Harris

1994-01-01

We assessed the relative effectiveness of pitfalls, single-ended, and double-ended funnel traps at 12 replicate sites in sand pine scrub using drift fence arrays. Pitfalls captured fewer species but yielded more individuals of many species and higher average species richness than funnel traps. Pitfalls and funnel traps exhibited differential capture bias probably due...

Integrated on-line system for DNA sequencing by capillary electrophoresis: From template to called bases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ton, H.; Yeung, E.S.

1997-02-15

An integrated on-line prototype for coupling a microreactor to capillary electrophoresis for DNA sequencing has been demonstrated. A dye-labeled terminator cycle-sequencing reaction is performed in a fused-silica capillary. Subsequently, the sequencing ladder is directly injected into a size-exclusion chromatographic column operated at nearly 95{degree}C for purification. On-line injection to a capillary for electrophoresis is accomplished at a junction set at nearly 70{degree}C. High temperature at the purification column and injection junction prevents the renaturation of DNA fragments during on-line transfer without affecting the separation. The high solubility of DNA in and the relatively low ionic strength of 1 x TEmore » buffer permit both effective purification and electrokinetic injection of the DNA sample. The system is compatible with highly efficient separations by a replaceable poly(ethylene oxide) polymer solution in uncoated capillary tubes. Future automation and adaptation to a multiple-capillary array system should allow high-speed, high-throughput DNA sequencing from templates to called bases in one step. 32 refs., 5 figs.« less

Small area silicon diffused junction X-ray detectors

NASA Technical Reports Server (NTRS)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Attractiveness of MM-X Traps Baited with Human or Synthetic Odor to Mosquitoes (Diptera: Culicidae) in The Gambia

PubMed Central

QIU, YU TONG; SMALLEGANGE, RENATE C.; TER BRAAK, CAJO J. F.; SPITZEN, JEROEN; VAN LOON, JOOP J. A.; JAWARA, MUSA; MILLIGAN, PAUL; GALIMARD, AGNES M.; VAN BEEK, TERIS A.; KNOLS, BART G. J.; TAKKEN, WILLEM

2013-01-01

Chemical cues play an important role in the host-seeking behavior of blood-feeding mosquitoes (Diptera: Culicidae). A field study was carried out in The Gambia to investigate the effects of human odor or synthetic odor blends on the attraction of mosquitoes. MM-X traps baited with 16 odor blends to which carbon dioxide (CO2) was added were tested in four sets of experiments. In a second series of experiments, MM-X traps with 14 odor blends without CO2 were tested. A blend of ammonia and l-lactic acid with or without CO2 was used as control odor in series 1 and 2, respectively. Centers for Disease Control and Prevention (CDC) traps were placed in a traditional house and an experimental house to monitor mosquito densities during the experiments. The MM-X traps caught a total number of 196,756 mosquitoes, with the most abundant species belonging to the genera Mansonia (70.6%), Anopheles (17.5%), and Culex (11.5%). The most abundant mosquito species caught by the CDC traps (56,290 in total) belonged to the genera Mansonia (59.4%), Anopheles (16.0% An. gambiae s.l. Giles, and 11.3% An. ziemanni Grünberg), and Culex (11.6%). MM-X traps baited with synthetic blends were in many cases more attractive than MM-X traps baited with human odors. Addition of CO2 to synthetic odors substantially increased the catch of all mosquito species in the MM-X traps. A blend of ammonia + L-lactic acid + CO2 + 3-methylbutanoic acid was the most attractive odor for most mosquito species. The candidate odor blend shows the potential to enhance trap collections so that traps will provide better surveillance and possible control. PMID:18047195

Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector

NASA Astrophysics Data System (ADS)

Morohashi, Shin'ichi; Gotoh, Kohtaroh; Yokoyama, Naoki

2000-06-01

We have fabricated a tantalum-based Josephson junction for an X-ray detector. The tantalum layer was selected for the junction electrode because of its long quasiparticle lifetime, large X-ray absorption efficiency and stability against thermal cycling. We have developed a buffer layer to fabricate the tantalum layer with a body-centered cubic structure. Based on careful consideration of their superconductivity, we have selected a niobium thin layer as the buffer layer for fabricating the tantalum base electrode, and a tungsten thin layer for the tantalum counter electrode. Fabricated Nb/AlOx-Al/Ta/Nb and Nb/Ta/W/AlOx-Al/Ta/Nb Josephson junctions exhibited current-voltage characteristics with a low subgap leakage current.

Arrays of Nano Tunnel Junctions as Infrared Image Sensors

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong S.; Prokopuk, Nicholas

2006-01-01

Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

GaAs nanowire array solar cells with axial p-i-n junctions.

PubMed

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

[Size structure, selectivity and specific composition of the catch in traps for marine fish in the Gulf of California].

PubMed

Nevárez-Martínez, Manuel O; Balmori-Ramírez, Alejandro; Miranda-Mier, Everardo; Santos-Molina, J Pablo; Méndez-Tenorio, Francisco J; Cervantes-Valle, Celio

2008-09-01

We analyzed the performance of three traps for marine fish between October 2005 and August 2006 in the Gulf of California, Mexico. The performance was measured as difference in selectivity, fish diversity, size structure and yield. The samples were collected with quadrangular traps 90 cm wide, 120 cm long and 50 cm high. Trap type 1 had a 5 x 5 cm mesh (type 2: 5 x 5 cm including a rear panel of 5 x 10 cm; trap 3: 5 x 10 cm). Most abundant in our traps were: Goldspotted sand bass (Paralabrax auroguttatus), Ocean whitefish (Caulolatilus princeps), Spotted sand bass (P. maculatofaciatus) and Bighead tilefish (C. affinis); there was no bycatch. The number offish per trap per haul decreased when mesh size was increased. We also observed a direct relationship between mesh size and average fish length. By comparing our traps with the authorized fishing gear (hooks-and-line) we found that the size structure is larger in traps. Traps with larger mesh size were more selective. Consequently, we recommend adding traps to hooks-and-line as authorized fishing gear in the small scale fisheries of the Sonora coast, Mexico.

Broad spectrum solar cell

DOEpatents

Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA; Wu, Junqiao [Richmond, CA; Schaff, William J [Ithaca, NY

2007-05-15

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Sub micron area Nb/AlO(x)/Nb tunnel junctions for submillimeter mixer applications

NASA Technical Reports Server (NTRS)

Leduc, Henry G.; Bumble, B.; Cypher, S. R.; Judas, A. J.; Stern, J. A.

1992-01-01

In this paper, we report on a fabrication process developed for submicron area tunnel junctions. We have fabricated Nb/AlO(x)/Nb tunnel junctions with areas down to 0.1 sq micron using these techniques. The devices have shown excellent performance in receiver systems up to 500 GHz and are currently in use in radio astronomy observatories at 115, 230, and 500 GHz.

Multiscale Study of Plasmonic Scattering and Light Trapping Effect in Silicon Nanowire Array Solar Cells.

PubMed

Meng, Lingyi; Zhang, Yu; Yam, ChiYung

2017-02-02

Nanometallic structures that support surface plasmons provide new ways to confine light at deep-subwavelength scales. The effect of light scattering in nanowire array solar cells is studied by a multiscale approach combining classical electromagnetic (EM) and quantum mechanical simulations. A photovoltaic device is constructed by integrating a silicon nanowire array with a plasmonic silver nanosphere. The light scatterings by plasmonic element and nanowire array are obtained via classical EM simulations, while current-voltage characteristics and optical properties of the nanowire cells are evaluated quantum mechanically. We found that the power conversion efficiency (PCE) of photovoltaic device is substantially improved due to the local field enhancement of the plasmonic effect and light trapping by the nanowire array. In addition, we showed that there exists an optimal nanowire number density in terms of optical confinement and solar cell PCE.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Assembling mesoscopic particles by various optical schemes

NASA Astrophysics Data System (ADS)

Fournier, Jean-Marc; Rohner, Johann; Jacquot, Pierre; Johann, Robert; Mias, Solon; Salathé, René-P.

2005-08-01

Shaping optical fields is the key issue in the control of optical forces that pilot the manipulation of mesoscopic polarizable dielectric particles. The latter can be positioned according to endless configurations. The scope of this paper is to review and discuss several unusual designs which produce what we think are among some of the most interesting arrangements. The simplest schemes result from interference between two or several coherent light beams, leading to periodic as well as pseudo-periodic arrays of optical traps. Complex assemblages of traps can be created with holographic-type set-ups; this case is widely used by the trapping community. Clusters of traps can also be configured through interferometric-type set-ups or by generating external standing waves by diffractive elements. The particularly remarkable possibilities of the Talbot effect to generate three-dimensional optical lattices and several schemes of self-organization represent further very interesting means for trapping. They will also be described and discussed. in this paper. The mechanisms involved in those trapping schemes do not require the use of high numerical aperture optics; by avoiding the need for bulky microscope objectives, they allow for more physical space around the trapping area to perform experiments. Moreover, very large regular arrays of traps can be manufactured, opening numerous possibilities for new applications.

Production of arrays of chemically distinct nanolitre plugs via repeated splitting in microfluidic devices.

PubMed

Adamson, David N; Mustafi, Debarshi; Zhang, John X J; Zheng, Bo; Ismagilov, Rustem F

2006-09-01

This paper reports a method for the production of arrays of nanolitre plugs with distinct chemical compositions. One of the primary constraints on the use of plug-based microfluidics for large scale biological screening is the difficulty of fabricating arrays of chemically distinct plugs on the nanolitre scale. Here, using microfluidic devices with several T-junctions linked in series, a single input array of large (approximately 320 nL) plugs was split to produce 16 output arrays of smaller (approximately 20 nL) plugs; the composition and configuration of these arrays were identical to that of the input. This paper shows how the passive break-up of plugs in T-junction microchannel geometries can be used to produce a set of smaller-volume output arrays useful for chemical screening from a single large-volume array. A simple theoretical description is presented to describe splitting as a function of the Capillary number, the capillary pressure, the total pressure difference across the channel, and the geometric fluidic resistance. By accounting for these considerations, plug coalescence and plug-plug contamination can be eliminated from the splitting process and the symmetry of splitting can be preserved. Furthermore, single-outlet splitting devices were implemented with both valve- and volume-based methods for coordinating the release of output arrays. Arrays of plugs containing commercial sparse matrix screens were obtained from the presented splitting method and these arrays were used in protein crystallization trials. The techniques presented in this paper may facilitate the implementation of high-throughput chemical and biological screening.

Silicon-fiber blanket solar-cell array concept

NASA Technical Reports Server (NTRS)

Eliason, J. T.

1973-01-01

Proposed economical manufacture of solar-cell arrays involves parallel, planar weaving of filaments made of doped silicon fibers with diffused radial junction. Each filament is a solar cell connected either in series or parallel with others to form a blanket of deposited grids or attached electrode wire mesh screens.

Emily Warren | NREL

Science.gov Websites

generators. Featured Publications Warren, E. L.; Atwater, H. A.; Lewis, N. S. "Silicon Microwire Arrays , (2013) Warren, E. L.; McKone, J. R.; Atwater, H. A.; Gray, H. B.; Lewis, N. S. "Hydrogen-Evolution Characteristics of Ni-Mo-Coated, Radial Junction, n+p-silicon Microwire Array Photocathodes," Energy &

Current-phase relations in low carrier density graphene Josephson junctions

NASA Astrophysics Data System (ADS)

Kratz, Philip; Amet, Francois; Watson, Christopher; Moler, Kathryn; Ke, Chung; Borzenets, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Deacon, Russell; Yamamoto, Michihisa; Bomze, Yuriy; Tarucha, Seigo; Finkelstein, Gleb

Ideal Dirac semimetals have the unique property of being gate tunable to arbitrarily low electron and hole carrier concentrations near the Dirac point, without suffering from conduction channel pinch-off or Fermi level pinning to band edges and deep-level charge traps, which are common in typical semiconductors. SNS junctions, where N is a Dirac semimetal, can provide a versatile platform for studying few-mode superconducting weak links, with potential device applications for superconducting logic and qubits. We will use an inductive readout technique, scanning superconducting quantum interference device (SQUID) magnetometry, to measure the current-phase relations of high-mobility graphene SNS junctions as a function of temperature and carrier density, complementing magnetic Fraunhofer diffraction analysis from transport measurements which previously have assumed sinusoidal current-phase relations for junction Andreev modes. Deviations from sinusoidal behavior convey information about resonant scattering processes, dissipation, and ballistic modes in few-mode superconducting weak links.

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Equilibrium Thermodynamics, Formation, and Dissociation Kinetics of Trivalent Iron and Gallium Complexes of Triazacyclononane-Triphosphinate (TRAP) Chelators: Unraveling the Foundations of Highly Selective Ga-68 Labeling.

PubMed

Vágner, Adrienn; Forgács, Attila; Brücher, Ernő; Tóth, Imre; Maiocchi, Alessandro; Wurzer, Alexander; Wester, Hans-Jürgen; Notni, Johannes; Baranyai, Zsolt

2018-01-01

In order to rationalize the influence of Fe III contamination on labeling with the 68 Ga eluted from 68 Ge/ 68 Ga- g enerator, a detailed investigation was carried out on the equilibrium properties, formation and dissociation kinetics of Ga III - and Fe III -complexes of 1,4,7-triazacyclononane-1,4,7-tris(methylene[2-carboxyethylphosphinic acid]) (H 6 TRAP). The stability and protonation constants of the [Fe(TRAP)] 3- complex were determined by pH-potentiometry and spectrophotometry by following the competition reaction between the TRAP ligand and benzhydroxamic acid (0.15 M NaNO 3 , 25°C). The formation rates of [Fe(TRAP)] and [Ga(TRAP)] complexes were determined by spectrophotometry and 31 P-NMR spectroscopy in the pH range 4.5-6.5 in the presence of 5-40 fold H x TRAP (x-6) excess (x = 1 and 2, 0.15 M NaNO 3 , 25°C). The kinetic inertness of [Fe(TRAP)] 3- and [Ga(TRAP)] 3- was examined by the trans-chelation reactions with 10 to 20-fold excess of H x HBED (x-4) ligand by spectrophotometry at 25°C in 0.15 M NaCl (x = 0,1 and 2). The stability constant of [Fe(TRAP)] 3- (log K FeL = 26.7) is very similar to that of [Ga(TRAP)] 3- (log K GaL = 26.2). The rates of ligand exchange reaction of [Fe(TRAP)] 3- and [Ga(TRAP)] 3- with H x HBED (x-4) are similar. The reactions take place quite slowly via spontaneous dissociation of [M(TRAP)] 3- , [M(TRAP)OH] 4- and [M(TRAP)(OH) 2 ] 5- species. Dissociation half-lives ( t 1/2 ) of [Fe(TRAP)] 3- and [Ga(TRAP)] 3- complexes are 1.1 × 10 5 and 1.4 × 10 5 h at pH = 7.4 and 25°C. The formation reactions of [Fe(TRAP)] 3- and [Ga(TRAP)] 3- are also slow due to the formation of the unusually stable monoprotonated [ * M(HTRAP)] 2- intermediates [ * log K Ga(HL) = 10.4 and * log K Fe(HL) = 9.9], which are much more stable than the [ * Ga(HNOTA)] + intermediate [ * log K Ga(HL) = 4.2]. Deprotonation and transformation of the monoprotonated [ * M(HTRAP)] 2- intermediates into the final complex occur via OH - -assisted reactions. Rate constants ( k OH ) characterizing the OH - -driven deprotonation and transformation of [ * Ga(HTRAP)] 2- and [ * Fe(HTRAP)] 2- intermediates are 1.4 × 10 5 M -1 s -1 and 3.4 × 10 4 M -1 s -1 , respectively. In conclusion, the equilibrium and kinetic properties of [Fe(TRAP)] and [Ga(TRAP)] complexes are remarkably similar due to the close physico-chemical properties of Fe III and Ga III -ions. However, a slightly faster formation of [Ga(TRAP)] over [Fe(TRAP)] provides a rationale for a previously observed, selective complexation of 68 Ga III in presence of excess Fe III .

The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

NASA Astrophysics Data System (ADS)

Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

2016-12-01

Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

Optimization of niobium tunnel junctions as X-ray detectors

NASA Technical Reports Server (NTRS)

Saulnier, Gregory G.; Zacher, Robert A.; Van Vechten, Deborah; Boyer, Craig; Lovellette, Michael N.; Fritz, Gilbert G.; Soulen, Robert J.; Kang, Joonhee; Blamire, Mark; Kirk, Eugenie C. G.

1992-01-01

We report on our ongoing work using Nb/Al/AlO(x)/Nb junctions for the detection of X-rays. Detectors based on superconducting tunneling junctions offer the prospect of resolution over an order of magnitude higher than is obtainable with the current generation of semiconductor-based detectors. Results of measurements taken at 1.85 K (a temperature achievable with current space flight technology) include the current-voltage (I-V) curve, subgap current vs temperature, the dependence of the superconducting current on the applied magnetic field (Fraunhofer pattern), X-ray pulses, and the spectra from a 6 keV X-ray source which gave an intrinsic device resolution of approximately 700 eV. The collection of more than 10 exp 5 electrons per 6 keV photon is established.

Bypass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with coupon back side thermal conditions of both cold and ambient. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, experiment results, and the thermal model.

By-Pass Diode Temperature Tests of a Solar Array Coupon Under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H., Jr.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie

2016-01-01

Tests were performed on a 56-cell Advanced Triple Junction solar array coupon whose purpose was to determine margin available for bypass diodes integrated with new, large multi-junction solar cells that are manufactured from a 4-inch wafer. The tests were performed under high vacuum with cold and ambient coupon back-side. The bypass diodes were subjected to a sequence of increasing discrete current steps from 0 Amp to 2.0 Amp in steps of 0.25 Amp. At each current step, a temperature measurement was obtained via remote viewing by an infrared camera. This paper discusses the experimental methodology, including the calibration of the thermal imaging system, and the results.

Voltage noise of current-driven vortices in disordered Josephson junction arrays.

PubMed

He, G L; Zhao, Z G; Liu, S; Yang, Y H; Liu, M; Xing, D Y

2006-08-16

Dynamical phenomena of moving vortices and voltage noise spectra are studied in disordered Josephson junction arrays (JJAs). The plastic motion of vortices, smectic flow, and moving Bragg glass phases are separated by two dynamic melting transitions driven by current. From the voltage noise spectra of moving vortices, it is found that the driving current plays an important role in the melting of pinning vortices glass and ordering of moving vortices. The features of noise spectra obtained in the disordered JJA model have been observed recently in the high-temperature superconductor Bi(2)Sr(2)CaCu(2)O(y) near the first-order melting transition, indicating that both of them are related to each other.

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

PubMed Central

El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

2009-01-01

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of ∼560 e (rms) for PSI-3. PMID:19673229

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

PubMed

El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

2009-07-01

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of approximately 560 e (rms) for PSI-3.

Straight-line drift fences and pitfall traps

USGS Publications Warehouse

Corn, Paul Stephen

1994-01-01

Straight-line drift fences typically are short barriers (5-15 m) that direct animals traveling on the substrate surface into traps places at the ends of or beside the barriers. Traps (described below) can be pitfalls, funnel traps, or a combination of the two. Drift fences with pitfall or funnel traps and pitfall traps without fences are used commonly to inventory and monitor populations of amphibians and reptiles. For example, 9 of 17 field studies reported for management of terrestrial vertebrates (Sarzo et al. 1988) used these techniques to sample amphibians. Drift fences with pitfall traps can be used to determine species richness at a site and to detect the presence of rare species. They also can yield data on relative abundances and habitat use of selected species. Pitfall traps arrayed in a grid without fences can also be used to study the population ecology and habitat use of selected species. Population density can be estimated with this latter technique if used in conjunction with mark-recapture techniques (see Chapter 8). Drift fence arrays or pitfall grids can be left in place for long-term monitoring. In this section, I discuss the use of this technique to obtain data on amphibians away from breeding ponds. Use of drift fences and traps to monitory amphibian activity at breeding ponds is discussed in the section "Drift Fences Encircling Breeding Sits", below (technique 9). Some materials and procedures are common to both techniques. Investigators contemplating the use of drift fences and traps in any context should read both accounts.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measuredmore » carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.« less

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

NASA Astrophysics Data System (ADS)

Jiang, Jun; Zhang, X.-G.; Han, X. F.

2016-04-01

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Crustal shear-wave splitting from local earthquakes in the Hengill triple junction, southwest Iceland

USGS Publications Warehouse

Evans, J.R.; Foulger, G.R.; Julian, B.R.; Miller, A.D.

1996-01-01

The Hengill region in SW Iceland is an unstable ridge-ridge-transform triple junction between an active and a waning segment of the mid-Atlantic spreading center and a transform that is transgressing southward. The triple junction contains active and extinct spreading segments and a widespread geothermal area. We evaluated shear-wave birefringence for locally recorded upper-crustal earthquakes using an array of 30 three-component digital seismographs. Fast-polarization directions, ??, are mostly NE to NNE, subparallel to the spreading axis and probably caused by fissures and microcracks related to spreading. However, there is significant variability in ?? throughout the array. The lag from fast to slow S is not proportional to earthquake depth (ray length), being scattered at all depths. The average wave-speed difference between qS1 and qS2 in the upper 2-5 km of the crust is 2-5%. Our results suggest considerable heterogeneity or strong S scattering.

Effects of oxygen stoichiometry on the scaling behaviors of YBa2Cu3O(x) grain boundary weak-links

NASA Technical Reports Server (NTRS)

Wu, K. H.; Fu, C. M.; Jeng, W. J.; Juang, J. Y.; Uen, T. M.; Gou, Y. S.

1995-01-01

The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa2Cu3O(x) bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealing processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e with x = 7.0 in YBa2Cu3O(x) stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g with x = 6.9 in YBa2Cu3O(x) stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, D., E-mail: deyongl@uci.edu; Heidbrink, W. W.; Hao, G. Z.

A compact and multi-view solid state neutral particle analyzer (SSNPA) diagnostic based on silicon photodiode arrays has been successfully tested on the National Spherical Torus Experiment-Upgrade. The SSNPA diagnostic provides spatially, temporally, and pitch-angle resolved measurements of fast-ion distribution by detecting fast neutral flux resulting from the charge exchange (CX) reactions. The system consists of three 16-channel subsystems: t-SSNPA viewing the plasma mid-radius and neutral beam (NB) line #2 tangentially, r-SSNPA viewing the plasma core and NB line #1 radially, and p-SSNPA with no intersection with any NB lines. Due to the setup geometry, the active CX signals of t-SSNPAmore » and r-SSNPA are mainly sensitive to passing and trapped particles, respectively. In addition, both t-SSNPA and r-SSNPA utilize three vertically stacked arrays with different filter thicknesses to obtain coarse energy information. The experimental data show that all channels are operational. The signal to noise ratio is typically larger than 10, and the main noise is x-ray induced signal. The active and passive CX signals are clearly observed on t-SSNPA and r-SSNPA during NB modulation. The SSNPA data also indicate significant losses of passing particles during sawteeth, while trapped particles are weakly affected. Fluctuations up to 120 kHz have been observed on SSNPA, and they are strongly correlated with magnetohydrodynamics instabilities.« less

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Ribelin, Rosine

2007-01-01

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Crossing Over from Attractive to Repulsive Interactions in a Tunneling Bosonic Josephson Junction.

PubMed

Spagnolli, G; Semeghini, G; Masi, L; Ferioli, G; Trenkwalder, A; Coop, S; Landini, M; Pezzè, L; Modugno, G; Inguscio, M; Smerzi, A; Fattori, M

2017-06-09

We explore the interplay between tunneling and interatomic interactions in the dynamics of a bosonic Josephson junction. We tune the scattering length of an atomic ^{39}K Bose-Einstein condensate confined in a double-well trap to investigate regimes inaccessible to other superconducting or superfluid systems. In the limit of small-amplitude oscillations, we study the transition from Rabi to plasma oscillations by crossing over from attractive to repulsive interatomic interactions. We observe a critical slowing down in the oscillation frequency by increasing the strength of an attractive interaction up to the point of a quantum phase transition. With sufficiently large initial oscillation amplitude and repulsive interactions, the system enters the macroscopic quantum self-trapping regime, where we observe coherent undamped oscillations with a self-sustained average imbalance of the relative well population. The exquisite agreement between theory and experiments enables the observation of a broad range of many body coherent dynamical regimes driven by tunable tunneling energy, interactions and external forces, with applications spanning from atomtronics to quantum metrology.

Holliday junction trap shows how cells use recombination and a junction-guardian role of RecQ helicase.

PubMed

Xia, Jun; Chen, Li-Tzu; Mei, Qian; Ma, Chien-Hui; Halliday, Jennifer A; Lin, Hsin-Yu; Magnan, David; Pribis, John P; Fitzgerald, Devon M; Hamilton, Holly M; Richters, Megan; Nehring, Ralf B; Shen, Xi; Li, Lei; Bates, David; Hastings, P J; Herman, Christophe; Jayaram, Makkuni; Rosenberg, Susan M

2016-11-01

DNA repair by homologous recombination (HR) underpins cell survival and fuels genome instability, cancer, and evolution. However, the main kinds and sources of DNA damage repaired by HR in somatic cells and the roles of important HR proteins remain elusive. We present engineered proteins that trap, map, and quantify Holliday junctions (HJs), a central DNA intermediate in HR, based on catalytically deficient mutant RuvC protein of Escherichia coli . We use RuvCDefGFP (RDG) to map genomic footprints of HR at defined DNA breaks in E. coli and demonstrate genome-scale directionality of double-strand break (DSB) repair along the chromosome. Unexpectedly, most spontaneous HR-HJ foci are instigated, not by DSBs, but rather by single-stranded DNA damage generated by replication. We show that RecQ, the E. coli ortholog of five human cancer proteins, nonredundantly promotes HR-HJ formation in single cells and, in a novel junction-guardian role, also prevents apparent non-HR-HJs promoted by RecA overproduction. We propose that one or more human RecQ orthologs may act similarly in human cancers overexpressing the RecA ortholog RAD51 and find that cancer genome expression data implicate the orthologs BLM and RECQL4 in conjunction with EME1 and GEN1 as probable HJ reducers in such cancers. Our results support RecA-overproducing E. coli as a model of the many human tumors with up-regulated RAD51 and provide the first glimpses of important, previously elusive reaction intermediates in DNA replication and repair in single living cells.

Holliday junction trap shows how cells use recombination and a junction-guardian role of RecQ helicase

PubMed Central

Xia, Jun; Chen, Li-Tzu; Mei, Qian; Ma, Chien-Hui; Halliday, Jennifer A.; Lin, Hsin-Yu; Magnan, David; Pribis, John P.; Fitzgerald, Devon M.; Hamilton, Holly M.; Richters, Megan; Nehring, Ralf B.; Shen, Xi; Li, Lei; Bates, David; Hastings, P. J.; Herman, Christophe; Jayaram, Makkuni; Rosenberg, Susan M.

2016-01-01

DNA repair by homologous recombination (HR) underpins cell survival and fuels genome instability, cancer, and evolution. However, the main kinds and sources of DNA damage repaired by HR in somatic cells and the roles of important HR proteins remain elusive. We present engineered proteins that trap, map, and quantify Holliday junctions (HJs), a central DNA intermediate in HR, based on catalytically deficient mutant RuvC protein of Escherichia coli. We use RuvCDefGFP (RDG) to map genomic footprints of HR at defined DNA breaks in E. coli and demonstrate genome-scale directionality of double-strand break (DSB) repair along the chromosome. Unexpectedly, most spontaneous HR-HJ foci are instigated, not by DSBs, but rather by single-stranded DNA damage generated by replication. We show that RecQ, the E. coli ortholog of five human cancer proteins, nonredundantly promotes HR-HJ formation in single cells and, in a novel junction-guardian role, also prevents apparent non-HR–HJs promoted by RecA overproduction. We propose that one or more human RecQ orthologs may act similarly in human cancers overexpressing the RecA ortholog RAD51 and find that cancer genome expression data implicate the orthologs BLM and RECQL4 in conjunction with EME1 and GEN1 as probable HJ reducers in such cancers. Our results support RecA-overproducing E. coli as a model of the many human tumors with up-regulated RAD51 and provide the first glimpses of important, previously elusive reaction intermediates in DNA replication and repair in single living cells. PMID:28090586

Continuous-flow separation of live and dead yeasts using reservoir-based dielectrophoresis (rDEP)

NASA Astrophysics Data System (ADS)

Patel, Saurin; Showers, Daniel; Vedantam, Pallavi; Tzeng, Tzuen-Rong; Qian, Shizhi; Xuan, Xiangchun

2012-11-01

Separating live and dead cells is critical to the diagnosis of early stage diseases and to the efficacy test of drug screening etc. We develop a novel microfluidic approach to continuous separation of yeast cells by viability inside a reservoir. It exploits the cell dielectrophoresis that is induced by the inherent electric field gradient at the reservoir-microchannel junction to selectively trap dead yeasts and continuously sort them from live ones. We term this approach reservoir-based dielectrophoresis (rDEP). The transporting, focusing, and trapping of live and dead yeast cells at the reservoir-microchannel junction are studied separately by varying the DC-biased AC electric fields. These phenomena can all be reasonably predicted by a 2D numerical model. We find that the AC to DC field ratio for live yeast trapping is higher than that for dead cells because the former experiences a weaker rDEP while having a larger electrokinetic mobility. It is this difference in the AC to DC field ratio that enables the viability-based yeast cell separation. The rDEP approach has unique advantages over existing DEP-based techniques such as the occupation of zero channel space and the elimination of in-channel mechanical or electrical parts. NSF

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Finding the optimal lengths for three branches at a junction.

PubMed

Woldenberg, M J; Horsfield, K

1983-09-21

This paper presents an exact analytical solution to the problem of locating the junction point between three branches so that the sum of the total costs of the branches is minimized. When the cost per unit length of each branch is known the angles between each pair of branches can be deduced following reasoning first introduced to biology by Murray. Assuming the outer ends of each branch are fixed, the location of the junction and the length of each branch are then deduced using plane geometry and trigonometry. The model has applications in determining the optimal cost of a branch or branches at a junction. Comparing the optimal to the actual cost of a junction is a new way to compare cost models for goodness of fit to actual junction geometry. It is an unambiguous measure and is superior to comparing observed and optimal angles between each daughter and the parent branch. We present data for 199 junctions in the pulmonary arteries of two human lungs. For the branches at each junction we calculated the best fitting value of x from the relationship that flow alpha (radius)x. We found that the value of x determined whether a junction was best fitted by a surface, volume, drag or power minimization model. While economy of explanation casts doubt that four models operate simultaneously, we found that optimality may still operate, since the angle to the major daughter is less than the angle to the minor daughter. Perhaps optimality combined with a space filling branching pattern governs the branching geometry of the pulmonary artery.

Effective light absorption and its enhancement factor for silicon nanowire-based solar cell.

PubMed

Duan, Zhiqiang; Li, Meicheng; Mwenya, Trevor; Fu, Pengfei; Li, Yingfeng; Song, Dandan

2016-01-01

Although nanowire (NW) antireflection coating can enhance light trapping capability, which is generally used in crystal silicon (CS) based solar cells, whether it can improve light absorption in the CS body depends on the NW geometrical shape and their geometrical parameters. In order to conveniently compare with the bare silicon, two enhancement factors E(T) and E(A) are defined and introduced to quantitatively evaluate the efficient light trapping capability of NW antireflective layer and the effective light absorption capability of CS body. Five different shapes (cylindrical, truncated conical, convex conical, conical, and concave conical) of silicon NW arrays arranged in a square are studied, and the theoretical results indicate that excellent light trapping does not mean more light can be absorbed in the CS body. The convex conical NW has the best light trapping, but the concave conical NW has the best effective light absorption. Furthermore, if the cross section of silicon NW is changed into a square, both light trapping and effective light absorption are enhanced, and the Eiffel Tower shaped NW arrays have optimal effective light absorption.

Antenna-Coupled Superconducting Tunnel Junctions with Single-Electron Transistor Readout for Detection of Sub-mm Radiation

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Teufel, J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

Antenna-coupled superconducting tunnel junction detectors have the potential for photon-counting sensitivity at sub-mm wavelengths. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Development of an efficient pheromone-based trapping method for the banana root borer Cosmopolites sordidus.

PubMed

Reddy, G V P; Cruz, Z T; Guerrero, A

2009-01-01

The banana root borer Cosmopolites sordidus (Germar) (Coleoptera: Curculionidae) is a major pest of bananas throughout the world. Chemical control is both undesirable and expensive, where biological control alternatives are limited, and pheromone-based trapping results in low captures. In this study, several important factors that affect pheromone-based catches, such as trap type, trap dimensions, and color and position of the traps, were optimized. Ground traps were found to be superior to ramp and pitfall traps, and larger traps (40 x 25 cm and above) were more efficient than smaller ones (30 x 15 cm). In a color-choice test, the banana weevil clearly preferred brown traps over yellow, red, gray, blue, black, white, and green, with mahogany being more attractive than other shades of brown. In addition, pheromone baited ground traps positioned in the shade of the canopy caught significantly more adults than those placed in sunlight. Therefore, mahogany-brown ground traps 40 x 25 cm appear to be the most efficient at catching C. sordidus adults and have the greatest potential for use in mass trapping and programs for eradication of this pest.

Current-voltage scaling of a Josephson-junction array at irrational frustration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granato, E.

1996-10-01

Numerical simulations of the current-voltage characteristics of an ordered two-dimensional Josephson-junction array at an irrational flux quantum per plaquette are presented. The results are consistent with a scaling analysis that assumes a zero-temperature vortex-glass transition. The thermal-correlation length exponent characterizing this transition is found to be significantly different from the corresponding value for vortex-glass models in disordered two-dimensional superconductors. This leads to a current scale where nonlinearities appear in the current-voltage characteristics decreasing with temperature {ital T} roughly as {ital T}{sup 2} in contrast with the {ital T}{sup 3} behavior expected for disordered models. {copyright} {ital 1996 The American Physicalmore » Society.}« less

Investigation of Proposed Process Sequence for the Array Automated Assembly Task, Phase 2. [low cost silicon solar array fabrication

NASA Technical Reports Server (NTRS)

Mardesich, N.; Garcia, A.; Bunyan, S.; Pepe, A.

1979-01-01

The technological readiness of the proposed process sequence was reviewed. Process steps evaluated include: (1) plasma etching to establish a standard surface; (2) forming junctions by diffusion from an N-type polymeric spray-on source; (3) forming a p+ back contact by firing a screen printed aluminum paste; (4) forming screen printed front contacts after cleaning the back aluminum and removing the diffusion oxide; (5) cleaning the junction by a laser scribe operation; (6) forming an antireflection coating by baking a polymeric spray-on film; (7) ultrasonically tin padding the cells; and (8) assembling cell strings into solar circuits using ethylene vinyl acetate as an encapsulant and laminating medium.

Silicon-based Coulomb blockade thermometer with Schottky barriers

NASA Astrophysics Data System (ADS)

Tuboltsev, V.; Savin, A.; Rogozin, V. D.; Räisänen, J.

2014-04-01

A hybrid Coulomb blockade thermometer (CBT) in form of an array of intermittent aluminum and silicon islands connected in series via tunnel junctions was fabricated on a thin silicon-on-insulator (SOI) film. Tunnel barriers in the micrometer size junctions were formed by metal-semiconductor Schottky contacts between aluminium electrodes and heavily doped silicon. Differential conductance through the array vs. bias voltage was found to exhibit characteristic features of competing thermal and charging effects enabling absolute temperature measurements over the range of ˜65 to ˜500 mK. The CBT performance implying the primary nature of the thermometer demonstrated for rather trivial architecture attempted in this work paves a route for introduction of Coulomb blockade thermometry into well-developed contemporary SOI technology.

Macroscopic quantum interference from atomic tunnel arrays

PubMed

Anderson; Kasevich

1998-11-27

Interference of atomic de Broglie waves tunneling from a vertical array of macroscopically populated traps has been observed. The traps were located in the antinodes of an optical standing wave and were loaded from a Bose-Einstein condensate. Tunneling was induced by acceleration due to gravity, and interference was observed as a train of falling pulses of atoms. In the limit of weak atomic interactions, the pulse frequency is determined by the gravitational potential energy difference between adjacent potential wells. The effect is closely related to the ac Josephson effect observed in superconducting electronic systems.

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

2016-11-11

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Quarter-flux Hofstadter lattice in a qubit-compatible microwave cavity array

NASA Astrophysics Data System (ADS)

Owens, Clai; LaChapelle, Aman; Saxberg, Brendan; Anderson, Brandon M.; Ma, Ruichao; Simon, Jonathan; Schuster, David I.

2018-01-01

Topological and strongly correlated materials are exciting frontiers in condensed-matter physics, married prominently in studies of the fractional quantum Hall effect [H. L. Stormer et al., Rev. Mod. Phys. 71, S298 (1999), 10.1103/RevModPhys.71.S298], There is an active effort to develop synthetic materials where the microscopic dynamics and ordering arising from the interplay of topology and interaction may be directly explored. In this work, we demonstrate an architecture for exploration of topological matter constructed from tunnel-coupled, time-reversal-broken microwave cavities that are both low loss and compatible with Josephson-junction-mediated interactions [A. Wallraff et al., Nature (London) 431, 162 (2004), 10.1038/nature02851]. Following our proposed protocol [B. M. Anderson et al., Phys. Rev. X 6, 041043 (2016), 10.1103/PhysRevX.6.041043], we implement a square lattice Hofstadter model at a quarter flux per plaquette (α =1 /4 ), with time-reversal symmetry broken through the chiral Wannier orbital of resonators coupled to yttrium-iron-garnet spheres. We demonstrate site-resolved spectroscopy of the lattice, time-resolved dynamics of its edge channels, and a direct measurement of the dispersion of the edge channels. Finally, we demonstrate the flexibility of the approach by erecting a tunnel barrier and investigating dynamics across it. With the introduction of Josephson junctions to mediate interactions between photons, this platform is poised to explore strongly correlated topological quantum science in a synthetic system.

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE PAGES

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

2016-10-04

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Electrostatic Discharge Test of Multi-Junction Solar Array Coupons After Combined Space Environmental Exposures

NASA Technical Reports Server (NTRS)

Wright, Kenneth H.; Schneider, Todd; Vaughn, Jason; Hoang, Bao; Funderburk, Victor V.; Wong, Frankie; Gardiner, George

2010-01-01

A set of multi-junction GaAs/Ge solar array test coupons were subjected to a sequence of 5-year increments of combined environmental exposure tests. The test coupons capture an integrated design intended for use in a geosynchronous (GEO) space environment. A key component of this test campaign is conducting electrostatic discharge (ESD) tests in the inverted gradient mode. The protocol of the ESD tests is based on the ISO/CD 11221, the ISO standard for ESD testing on solar array panels. This standard is currently in its final review with expected approval in 2010. The test schematic in the ISO reference has been modified with Space System/Loral designed circuitry to better simulate the on-orbit operational conditions of its solar array design. Part of the modified circuitry is to simulate a solar array panel coverglass flashover discharge. All solar array coupons used in the test campaign consist of 4 cells. The ESD tests are performed at the beginning of life (BOL) and at each 5-year environment exposure point. The environmental exposure sequence consists of UV radiation, electron/proton particle radiation, thermal cycling, and ion thruster plume. This paper discusses the coverglass flashover simulation, ESD test setup, and the importance of the electrical test design in simulating the on-orbit operational conditions. Results from 5th-year testing are compared to the baseline ESD characteristics determined at the BOL condition.

Eye lens membrane junctional microdomains: a comparison between healthy and pathological cases

NASA Astrophysics Data System (ADS)

Buzhynskyy, Nikolay; Sens, Pierre; Behar-Cohen, Francine; Scheuring, Simon

2011-08-01

The eye lens is a transparent tissue constituted of tightly packed fiber cells. To maintain homeostasis and transparency of the lens, the circulation of water, ions and metabolites is required. Junctional microdomains connect the lens cells and ensure both tight cell-to-cell adhesion and intercellular flow of fluids through a microcirculation system. Here, we overview membrane morphology and tissue functional requirements of the mammalian lens. Atomic force microscopy (AFM) has opened up the possibility of visualizing the junctional microdomains at unprecedented submolecular resolution, revealing the supramolecular assembly of lens-specific aquaporin-0 (AQP0) and connexins (Cx). We compare the membrane protein assembly in healthy lenses with senile and diabetes-II cataract cases and novel data of the lens membranes from a congenital cataract. In the healthy case, AQP0s form characteristic square arrays confined by connexons. In the cases of senile and diabetes-II cataract patients, connexons were degraded, leading to malformation of AQP0 arrays and breakdown of the microcirculation system. In the congenital cataract, connexons are present, indicating probable non-membranous grounds for lens opacification. Further, we discuss the energetic aspects of the membrane organization in junctional microdomains. The AFM hence becomes a biomedical nano-imaging tool for the analysis of single-membrane protein supramolecular association in healthy and pathological membranes.

Simultaneous diamagnetic and magnetic particle trapping in ferrofluid microflows via a single permanent magnet

PubMed Central

Zhou, Yilong; Kumar, Dhileep Thanjavur; Lu, Xinyu; Kale, Akshay; DuBose, John; Song, Yongxin; Wang, Junsheng; Li, Dongqing; Xuan, Xiangchun

2015-01-01

Trapping and preconcentrating particles and cells for enhanced detection and analysis are often essential in many chemical and biological applications. Existing methods for diamagnetic particle trapping require the placement of one or multiple pairs of magnets nearby the particle flowing channel. The strong attractive or repulsive force between the magnets makes it difficult to align and place them close enough to the channel, which not only complicates the device fabrication but also restricts the particle trapping performance. This work demonstrates for the first time the use of a single permanent magnet to simultaneously trap diamagnetic and magnetic particles in ferrofluid flows through a T-shaped microchannel. The two types of particles are preconcentrated to distinct locations of the T-junction due to the induced negative and positive magnetophoretic motions, respectively. Moreover, they can be sequentially released from their respective trapping spots by simply increasing the ferrofluid flow rate. In addition, a three-dimensional numerical model is developed, which predicts with a reasonable agreement the trajectories of diamagnetic and magnetic particles as well as the buildup of ferrofluid nanoparticles. PMID:26221197

Simultaneous diamagnetic and magnetic particle trapping in ferrofluid microflows via a single permanent magnet.

PubMed

Zhou, Yilong; Kumar, Dhileep Thanjavur; Lu, Xinyu; Kale, Akshay; DuBose, John; Song, Yongxin; Wang, Junsheng; Li, Dongqing; Xuan, Xiangchun

2015-07-01

Trapping and preconcentrating particles and cells for enhanced detection and analysis are often essential in many chemical and biological applications. Existing methods for diamagnetic particle trapping require the placement of one or multiple pairs of magnets nearby the particle flowing channel. The strong attractive or repulsive force between the magnets makes it difficult to align and place them close enough to the channel, which not only complicates the device fabrication but also restricts the particle trapping performance. This work demonstrates for the first time the use of a single permanent magnet to simultaneously trap diamagnetic and magnetic particles in ferrofluid flows through a T-shaped microchannel. The two types of particles are preconcentrated to distinct locations of the T-junction due to the induced negative and positive magnetophoretic motions, respectively. Moreover, they can be sequentially released from their respective trapping spots by simply increasing the ferrofluid flow rate. In addition, a three-dimensional numerical model is developed, which predicts with a reasonable agreement the trajectories of diamagnetic and magnetic particles as well as the buildup of ferrofluid nanoparticles.

Deep level defects in dilute GaAsBi alloys grown under intense UV illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mooney, P. M.; Tarun, Marianne; Beaton, D. A.

2016-07-21

Dilute GaAs1-xBix alloys exhibiting narrow band edge photoluminescence (PL) were recently grown by molecular beam epitaxy (MBE) with the growth surface illuminated by intense UV radiation. To investigate whether the improved optical quality of these films results from a reduction in the concentration of deep level defects, p+/n and n+/p junction diodes were fabricated on both the illuminated and dark areas of several samples. Deep Level Transient Spectroscopy (DLTS) measurements show that the illuminated and dark areas of both the n- and p-type GaAs1-xBix epi-layers have similar concentrations of near mid-gap electron and hole traps, in the 1015 cm-3 range.more » Thus the improved PL spectra cannot be explained by a reduction in non-radiative recombination at deep level defects. We note that carrier freeze-out above 35 K is significantly reduced in the illuminated areas of the p-type GaAs1-xBix layers compared to the dark areas, allowing the first DLTS measurements of defect energy levels close to the valence band edge. These defect levels may account for differences in the PL spectra from the illuminated and dark areas of un-doped layers with a similar Bi fraction.« less

Effects of oxygen stoichiometry on the scaling behaviors of YBa{sub 2}Cu{sub 3}O{sub x} grain boundary weak-links

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, K.H.; Fu, C.M.; Jeng, W.J.

1994-12-31

The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa{sub 2}Cu{sub 3}O{sub x} bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealling processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e. with x=7.0 in YBa{sub 2}Cu{sub 3}O{sub x} stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g. with x=6.9 in YBa{sub 2}Cu{sub 3}O{sub x}more » stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.« less

Structural and optical properties of glancing angle deposited In2O3 columnar arrays and Si/In2O3 photodetector

NASA Astrophysics Data System (ADS)

Mondal, A.; Shougaijam, B.; Goswami, T.; Dhar, J. C.; Singh, N. K.; Choudhury, S.; Chattopadhay, K. K.

2014-04-01

Ordered and perpendicular columnar arrays of In2O3 were synthesized on conducting ITO electrode by a simple glancing angle deposition (GLAD) technique. The as-deposited In2O3 columns were investigated by field emission gun-scanning electron microscope (FEG-SEM). The average length and diameter of the columns were estimated ˜400 nm and ˜100 nm, respectively. The morphology of the structure was examined by transmission electron microscopy (TEM). X-ray diffraction (XRD) analysis shows the polycrystalline nature of the sample which was verified by selective area electron diffraction (SAED) analysis. The growth mechanism and optical properties of the columns were also discussed. Optical absorption shows that In2O3 columns have a high band to band transition at ˜3.75 eV. The ultraviolet and green emissions were obtained from the In2O3 columnar arrays. The P-N junction was formed between In2O3 and P-type Si substrate. The GLAD synthesized In2O3 film exhibits low current conduction compared to In2O3 TF. However, the Si/GLAD-In2O3 detector shows ˜1.5 times enhanced photoresponsivity than that of Si/In2O3 TF.

Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

2018-04-01

Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

Computer Aided Approach to the Design of Y-Junction Stripline and Microstrip Ferrite Circulators

DTIC Science & Technology

1992-05-05

einO (36) n Jn(kr) J(k) A " kr J~r Finally, the Green’s function is 7 R. E. NEIDERT G(r,op ; R#¢) = X + Y X= j ZeJo(kr) 2 x Jo(kr) (37) IC n Jn(kR) - ’ n ...AD-A251 337 NRL/R ,-92-938I IIIII~ l l li i 1 11 [IIIfll li Computer Aided Approach to the Design of Y -Junction Stripline and Microstrip Ferrite...Aided Approach to the Design of Y -Junction - 62234N Stripline and Microstrip Ferrite Circulators PR - RS34R2 6. AUTHOR(S) WU - 2535-0 Robert E

NASA Tech Briefs, April 2006

NASA Technical Reports Server (NTRS)

2006-01-01

The topics covered include: 1) Replaceable Sensor System for Bioreactor Monitoring; 2) Unitary Shaft-Angle and Shaft-Speed Sensor Assemblies; 3) Arrays of Nano Tunnel Junctions as Infrared Image Sensors; 4) Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors; 5) Compact, Precise Inertial Rotation Sensors for Spacecraft; 6) Universal Controller for Spacecraft Mechanisms; 7) The Flostation - an Immersive Cyberspace System; 8) Algorithm for Aligning an Array of Receiving Radio Antennas; 9) Single-Chip T/R Module for 1.2 GHz; 10) Quantum Entanglement Molecular Absorption Spectrum Simulator; 11) FuzzObserver; 12) Internet Distribution of Spacecraft Telemetry Data; 13) Semi-Automated Identification of Rocks in Images; 14) Pattern-Recognition Algorithm for Locking Laser Frequency; 15) Designing Cure Cycles for Matrix/Fiber Composite Parts; 16) Controlling Herds of Cooperative Robots; 17) Modification of a Limbed Robot to Favor Climbing; 18) Vacuum-Assisted, Constant-Force Exercise Device; 19) Production of Tuber-Inducing Factor; 20) Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron; 21) Tunable Filter Made From Three Coupled WGM Resonators; and 22) Dynamic Pupil Masking for Phasing Telescope Mirror Segments.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

NASA Astrophysics Data System (ADS)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-26

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s -1 , corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aghili Yajadda, Mir Massoud

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at highmore » voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.« less

Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.

In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

Dispersion mechanisms of a tidal river junction in the Sacramento–San Joaquin Delta, California

DOE PAGES

Gleichauf, Karla T.; Wolfram, Philip J.; Monsen, Nancy E.; ...

2014-12-17

In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients, salt, sediment, and phytoplankton. Flow transport through a junction largely arises from velocity phasing in the form of divergent flow between junction channels for a portion of the tidal cycle. Field observations in the Georgiana Slough junction, which is composed of the North and South Mokelumne rivers, Georgiana Slough, and the Mokelumne River, show that flow phasing differences between these rivers arise from operational, riverine, and tidal forcing. A combination of Acoustic Dopplermore » Current Profile (ADCP) boat transecting and moored ADCPs over a spring–neap tidal cycle (May to June 2012) monitored the variability of spatial and temporal velocity, respectively. Two complementary drifter studies enabled assessment of local transport through the junction to identify small-scale intrajunction dynamics. We supplemented field results with numerical simulations using the SUNTANS model to demonstrate the importance of phasing offsets for junction transport and dispersion. Different phasing of inflows to the junction resulted in scalar patchiness that is characteristic of MacVean and Stacey’s (2011) advective tidal trapping. Furthermore, we observed small-scale junction flow features including a recirculation zone and shear layer, which play an important role in intra-junction mixing over time scales shorter than the tidal cycle (i.e., super-tidal time scales). Thus, the study period spanned open- and closed-gate operations at the Delta Cross Channel. Synthesis of field observations and modeling efforts suggest that management operations related to the Delta Cross Channel can strongly affect transport in the Delta by modifying the relative contributions of tidal and riverine flows, thereby changing the junction flow phasing.« less

Semiconductor wire array structures, and solar cells and photodetectors based on such structures

DOEpatents

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.

PubMed

Dai, Xing; Dayeh, Shadi A; Veeramuthu, Vaithianathan; Larrue, Alexandre; Wang, Jian; Su, Haibin; Soci, Cesare

2011-11-09

New insights into understanding and controlling the intriguing phenomena of spontaneous merging (kissing) and the self-assembly of monolithic Y- and T-junctions is demonstrated in the metal-organic chemical vapor deposition growth of GaAs nanowires. High-resolution transmission electron microscopy for determining polar facets was coupled to electrostatic-mechanical modeling and position-controlled synthesis to identify nanowire diameter, length, and pitch, leading to junction formation. When nanowire patterns are designed so that the electrostatic energy resulting from the interaction of polar surfaces exceeds the mechanical energy required to bend the nanowires to the point of contact, their fusion can lead to the self-assembly of monolithic junctions. Understanding and controlling this phenomenon is a great asset for the realization of dense arrays of vertical nanowire devices and opens up new ways toward the large scale integration of nanowire quantum junctions or nanowire intracellular probes.

Dielectrophoresis-Assisted Raman Spectroscopy of Intravesicular Analytes on Metallic Pyramids.

PubMed

Barik, Avijit; Cherukulappurath, Sudhir; Wittenberg, Nathan J; Johnson, Timothy W; Oh, Sang-Hyun

2016-02-02

Chemical analysis of membrane-bound containers such as secretory vesicles, organelles, and exosomes can provide insights into subcellular biology. These containers are loaded with a range of important biomolecules, which further underscores the need for sensitive and selective analysis methods. Here we present a metallic pyramid array for intravesicular analysis by combining site-selective dielectrophoresis (DEP) and Raman spectroscopy. Sharp pyramidal tips act as a gradient force generator to trap nanoparticles or vesicles from the solution, and the tips are illuminated by a monochromatic light source for concurrent spectroscopic detection of trapped analytes. The parameters suitable for DEP trapping were optimized by fluorescence microscopy, and the Raman spectroscopy setup was characterized by a nanoparticle based model system. Finally, vesicles loaded with 4-mercaptopyridine were concentrated at the tips and their Raman spectra were detected in real time. These pyramidal tips can perform large-area array-based trapping and spectroscopic analysis, opening up possibilities to detect molecules inside cells or cell-derived vesicles.

A semi-analytical method for near-trapped mode and fictitious frequencies of multiple scattering by an array of elliptical cylinders in water waves

NASA Astrophysics Data System (ADS)

Chen, Jeng-Tzong; Lee, Jia-Wei

2013-09-01

In this paper, we focus on the water wave scattering by an array of four elliptical cylinders. The null-field boundary integral equation method (BIEM) is used in conjunction with degenerate kernels and eigenfunctions expansion. The closed-form fundamental solution is expressed in terms of the degenerate kernel containing the Mathieu and the modified Mathieu functions in the elliptical coordinates. Boundary densities are represented by using the eigenfunction expansion. To avoid using the addition theorem to translate the Mathieu functions, the present approach can solve the water wave problem containing multiple elliptical cylinders in a semi-analytical manner by introducing the adaptive observer system. Regarding water wave problems, the phenomena of numerical instability of fictitious frequencies may appear when the BIEM/boundary element method (BEM) is used. Besides, the near-trapped mode for an array of four identical elliptical cylinders is observed in a special layout. Both physical (near-trapped mode) and mathematical (fictitious frequency) resonances simultaneously appear in the present paper for a water wave problem by an array of four identical elliptical cylinders. Two regularization techniques, the combined Helmholtz interior integral equation formulation (CHIEF) method and the Burton and Miller approach, are adopted to alleviate the numerical resonance due to fictitious frequency.

By-Pass Diode Temperature Tests of a Solar Array Coupon under Space Thermal Environment Conditions

NASA Technical Reports Server (NTRS)

Wright, Kenneth H.; Schneider, Todd A.; Vaughn, Jason A.; Hoang, Bao; Wong, Frankie; Wu, Gordon

2016-01-01

By-Pass diodes are a key design feature of solar arrays and system design must be robust against local heating, especially with implementation of larger solar cells. By-Pass diode testing was performed to aid thermal model development for use in future array designs that utilize larger cell sizes that result in higher string currents. Testing was performed on a 56-cell Advanced Triple Junction solar array coupon provided by SSL. Test conditions were vacuum with cold array backside using discrete by-pass diode current steps of 0.25 A ranging from 0 A to 2.0 A.

Electric and Magnetic Manipulation of Biological Systems

NASA Astrophysics Data System (ADS)

Lee, H.; Hunt, T. P.; Liu, Y.; Ham, D.; Westervelt, R. M.

2005-06-01

New types of biological cell manipulation systems, a micropost matrix, a microelectromagnet matrix, and a microcoil array, were developed. The micropost matrix consists of post-shaped electrodes embedded in an insulating layer. With a separate ac voltage applied to each electrode, the micropost matrix generates dielectrophoretic force to trap and move individual biological cells. The microelectromagnet matrix consists of two arrays of straight wires aligned perpendicular to each other, that are covered with insulating layers. By independently controlling the current in each wire, the microelectromagnet matrix creates versatile magnetic fields to manipulate individual biological cells attached to magnetic beads. The microcoil array is a set of coils implemented in a foundry using a standard silicon fabrication technology. Current sources to the coils, and control circuits are integrated on a single chip, making the device self-contained. Versatile manipulation of biological cells was demonstrated using these devices by generating optimized electric or magnetic field patterns. A single yeast cell was trapped and positioned with microscopic resolution, and multiple yeast cells were trapped and independently moved along the separate paths for cell-sorting.

Development and optimization of the Suna trap as a tool for mosquito monitoring and control

PubMed Central

2014-01-01

Background Monitoring of malaria vector populations provides information about disease transmission risk, as well as measures of the effectiveness of vector control. The Suna trap is introduced and evaluated with regard to its potential as a new, standardized, odour-baited tool for mosquito monitoring and control. Methods Dual-choice experiments with female Anopheles gambiae sensu lato in a laboratory room and semi-field enclosure, were used to compare catch rates of odour-baited Suna traps and MM-X traps. The relative performance of the Suna trap, CDC light trap and MM-X trap as monitoring tools was assessed inside a human-occupied experimental hut in a semi-field enclosure. Use of the Suna trap as a tool to prevent mosquito house entry was also evaluated in the semi-field enclosure. The optimal hanging height of Suna traps was determined by placing traps at heights ranging from 15 to 105 cm above ground outside houses in western Kenya. Results In the laboratory the mean proportion of An. gambiae s.l. caught in the Suna trap was 3.2 times greater than the MM-X trap (P < 0.001), but the traps performed equally in semi-field conditions (P = 0.615). As a monitoring tool , the Suna trap outperformed an unlit CDC light trap (P < 0.001), but trap performance was equal when the CDC light trap was illuminated (P = 0.127). Suspending a Suna trap outside an experimental hut reduced entry rates by 32.8% (P < 0.001). Under field conditions, suspending the trap at 30 cm above ground resulted in the greatest catch sizes (mean 25.8 An. gambiae s.l. per trap night). Conclusions The performance of the Suna trap equals that of the CDC light trap and MM-X trap when used to sample An. gambiae inside a human-occupied house under semi-field conditions. The trap is effective in sampling mosquitoes outside houses in the field, and the use of a synthetic blend of attractants negates the requirement of a human bait. Hanging a Suna trap outside a house can reduce An. gambiae house entry and its use as a novel tool for reducing malaria transmission risk will be evaluated in peri-domestic settings in sub-Saharan Africa. PMID:24998771

Comparative particle recoveries by the retracting rotorod, rotoslide and Burkard spore trap sampling in a compact array

NASA Astrophysics Data System (ADS)

Solomon, W. R.; Burge, H. A.; Boise, J. R.; Becker, M.

1980-06-01

An array comprising 4 intermittent (retracting) rotorods, 3 (“swingshield”) rotoslides and one Burkard (Hirst) automatic volumetric spore trap was operated on an urban rooftop during 70 periods of 9, 15 or 24 hours in late summer. Standard sampling procedures were utilized and recoveries of pollens as well as spores of Alternaria, Epicoccum, Pithomyces and Ganoderma species compared. Differences between paired counts from each sampler type showed variances increasing with levels of particle prevalence (and deposition). In addition, minimal, non-random, side-to-side and intersampler differences were noted for both impactor types. Exclusion of particles between operating intervals by rotoslides and rotorods was virtually complete. Spore trap recoveries for all particle categories, per m3, exceeded those by both impactors. The greatest (7-fold) difference was noted for the smallest type examined ( Ganoderma). For ragweed pollen, an overall spore trap/impactor ratio approached 1.5. Rain effects were difficult to discern but seemed to influence rotoslides least. Overall differences between impactors were quite small but generally favored the rotoslide in this comparison. Our data confirm the relative advantages of suction traps for small particles. Both impactors and spore traps are suited to pollen and large spore collection, and, with some qualification, data from both may be compared.

An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers

NASA Technical Reports Server (NTRS)

O'Neill, Mark J.; Piszczor, Michael F.

1988-01-01

The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

Graphene fixed-end beam arrays based on mechanical exfoliation

NASA Astrophysics Data System (ADS)

Li, Peng; You, Zheng; Haugstad, Greg; Cui, Tianhong

2011-06-01

A low-cost mechanical exfoliation method is presented to transfer graphite to graphene for free-standing beam arrays. Nickel film or photoresist is used to peel off and transfer patterned single-layer or multilayer graphene onto substrates with macroscopic continuity. Free-standing graphene beam arrays are fabricated on both silicon and polymer substrates. Their mechanical properties are studied by atomic force microscopy. Finally, a graphene based radio frequency switch is demonstrated, with its pull-in voltage and graphene-silicon junction investigated.

Array Automated Assembly Task Low Cost Silicon Solar Array Project, Phase 2

NASA Technical Reports Server (NTRS)

Rhee, S. S.; Jones, G. T.; Allison, K. L.

1978-01-01

Progress in the development of solar cells and module process steps for low-cost solar arrays is reported. Specific topics covered include: (1) a system to automatically measure solar cell electrical performance parameters; (2) automation of wafer surface preparation, printing, and plating; (3) laser inspection of mechanical defects of solar cells; and (4) a silicon antireflection coating system. Two solar cell process steps, laser trimming and holing automation and spray-on dopant junction formation, are described.

System-level simulation of liquid filling in microfluidic chips.

PubMed

Song, Hongjun; Wang, Yi; Pant, Kapil

2011-06-01

Liquid filling in microfluidic channels is a complex process that depends on a variety of geometric, operating, and material parameters such as microchannel geometry, flow velocity∕pressure, liquid surface tension, and contact angle of channel surface. Accurate analysis of the filling process can provide key insights into the filling time, air bubble trapping, and dead zone formation, and help evaluate trade-offs among the various design parameters and lead to optimal chip design. However, efficient modeling of liquid filling in complex microfluidic networks continues to be a significant challenge. High-fidelity computational methods, such as the volume of fluid method, are prohibitively expensive from a computational standpoint. Analytical models, on the other hand, are primarily applicable to idealized geometries and, hence, are unable to accurately capture chip level behavior of complex microfluidic systems. This paper presents a parametrized dynamic model for the system-level analysis of liquid filling in three-dimensional (3D) microfluidic networks. In our approach, a complex microfluidic network is deconstructed into a set of commonly used components, such as reservoirs, microchannels, and junctions. The components are then assembled according to their spatial layout and operating rationale to achieve a rapid system-level model. A dynamic model based on the transient momentum equation is developed to track the liquid front in the microchannels. The principle of mass conservation at the junction is used to link the fluidic parameters in the microchannels emanating from the junction. Assembly of these component models yields a set of differential and algebraic equations, which upon integration provides temporal information of the liquid filling process, particularly liquid front propagation (i.e., the arrival time). The models are used to simulate the transient liquid filling process in a variety of microfluidic constructs and in a multiplexer, representing a complex microfluidic network. The accuracy (relative error less than 7%) and orders-of-magnitude speedup (30 000X-4 000 000X) of our system-level models are verified by comparison against 3D high-fidelity numerical studies. Our findings clearly establish the utility of our models and simulation methodology for fast, reliable analysis of liquid filling to guide the design optimization of complex microfluidic networks.

Remodeling the zonula adherens in response to tension and the role of afadin in this response

PubMed Central

Acharya, Bipul R.; Peyret, Grégoire; Fardin, Marc-Antoine; Mège, René-Marc; Ladoux, Benoit; Yap, Alpha S.; Fanning, Alan S.

2016-01-01

Morphogenesis requires dynamic coordination between cell–cell adhesion and the cytoskeleton to allow cells to change shape and move without losing tissue integrity. We used genetic tools and superresolution microscopy in a simple model epithelial cell line to define how the molecular architecture of cell–cell zonula adherens (ZA) is modified in response to elevated contractility, and how these cells maintain tissue integrity. We previously found that depleting zonula occludens 1 (ZO-1) family proteins in MDCK cells induces a highly organized contractile actomyosin array at the ZA. We find that ZO knockdown elevates contractility via a Shroom3/Rho-associated, coiled-coil containing protein kinase (ROCK) pathway. Our data suggest that each bicellular border is an independent contractile unit, with actin cables anchored end-on to cadherin complexes at tricellular junctions. Cells respond to elevated contractility by increasing junctional afadin. Although ZO/afadin knockdown did not prevent contractile array assembly, it dramatically altered cell shape and barrier function in response to elevated contractility. We propose that afadin acts as a robust protein scaffold that maintains ZA architecture at tricellular junctions. PMID:27114502

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1982-01-01

The investigation of the performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was continued by fabricating a set of minicell wafers on a selection of 10 cm x 10 cm wafers. A minicell wafer consists of an array of small (approximately 0.2 sq cm in area) photodiodes which are isolated from one another by a mesa structure. The junction capacitance of each minicell was used to obtain the dopant concentration, and therefore the resistivity, as a function of position across each wafer. The results indicate that there is no significant variation in resistivity with position for any of the polycrystalline wafers, whether Semix or Wacker. However, the resistivity of Semix brick 71-01E did decrease slightly from bottom to top.

Induction of CD8(+) T cell responses and protective efficacy following microneedle-mediated delivery of a live adenovirus-vectored malaria vaccine.

PubMed

Pearson, Frances E; O'Mahony, Conor; Moore, Anne C; Hill, Adrian V S

2015-06-22

There is an urgent need for improvements in vaccine delivery technologies. This is particularly pertinent for vaccination programmes within regions of limited resources, such as those required for adequate provision for disposal of used needles. Microneedles are micron-sized structures that penetrate the stratum corneum of the skin, creating temporary conduits for the needle-free delivery of drugs or vaccines. Here, we aimed to investigate immunity induced by the recombinant simian adenovirus-vectored vaccine ChAd63.ME-TRAP; currently undergoing clinical assessment as a candidate malaria vaccine, when delivered percutaneously by silicon microneedle arrays. In mice, we demonstrate that microneedle-mediated delivery of ChAd63.ME-TRAP induced similar numbers of transgene-specific CD8(+) T cells compared to intradermal (ID) administration with needle-and-syringe, following a single immunisation and after a ChAd63/MVA heterologous prime-boost schedule. When mice immunised with ChAd63/MVA were challenged with live Plasmodium berghei sporozoites, microneedle-mediated ChAd63.ME-TRAP priming demonstrated equivalent protective efficacy as did ID immunisation. Furthermore, responses following ChAd63/MVA immunisation correlated with a specific design parameter of the array used ('total array volume'). The level of transgene expression at the immunisation site and skin-draining lymph node (dLN) was also linked to total array volume. These findings have implications for defining silicon microneedle array design for use with live, vectored vaccines. Copyright © 2015 Elsevier Ltd. All rights reserved.

Array of titanium dioxide nanostructures for solar energy utilization

DOEpatents

Qiu, Xiaofeng; Parans Paranthaman, Mariappan; Chi, Miaofang; Ivanov, Ilia N; Zhang, Zhenyu

2014-12-30

An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.

Tuning a circular p-n junction in graphene from quantum confinement to optical guiding

NASA Astrophysics Data System (ADS)

Jiang, Yuhang; Mao, Jinhai; Moldovan, Dean; Masir, Massoud Ramezani; Li, Guohong; Watanabe, Kenji; Taniguchi, Takashi; Peeters, Francois M.; Andrei, Eva Y.

2017-11-01

The photon-like propagation of the Dirac electrons in graphene, together with its record-high electronic mobility, can lead to applications based on ultrafast electronic response and low dissipation. However, the chiral nature of the charge carriers that is responsible for the high mobility also makes it difficult to control their motion and prevents electronic switching. Here, we show how to manipulate the charge carriers by using a circular p-n junction whose size can be continuously tuned from the nanometre to the micrometre scale. The junction size is controlled with a dual-gate device consisting of a planar back gate and a point-like top gate made by decorating a scanning tunnelling microscope tip with a gold nanowire. The nanometre-scale junction is defined by a deep potential well created by the tip-induced charge. It traps the Dirac electrons in quantum-confined states, which are the graphene equivalent of the atomic collapse states (ACSs) predicted to occur at supercritically charged nuclei. As the junction size increases, the transition to the optical regime is signalled by the emergence of whispering-gallery modes, similar to those observed at the perimeter of acoustic or optical resonators, and by the appearance of a Fabry-Pérot interference pattern for junctions close to a boundary.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

Study of phase-locked diode laser array and DFB/DBR surface emitting laser diode

NASA Astrophysics Data System (ADS)

Hsin, Wei

New types of phased-array and surface-emitting lasers are designed. The importance and approaches (or structures) of different phased array and surface emitting laser diodes are reviewed. The following are described: (1) a large optical cavity channel substrate planar laser array with layer thickness chirping; (2) a vertical cavity surface emitter with distributed feedback (DFB) optical cavity and a transverse junction buried heterostructure; (3) a microcavity distributed Bragg reflector (DBR) surface emitter; and (4) two surface emitting laser structures which utilized lateral current injection schemes to overcome the problems occurring in the vertical injection scheme.

Electrical and optical characterizations of InAs/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Han, Im Sik; Kim, Seung Hyun; Kim, Jong Su; Noh, Sam Kyu; Lee, Sang Jun; Kim, Honggyun; Kim, Deok-Kee; Leem, Jae-Young

2018-03-01

The electrical and optical characterizations of InAs/GaAs quantum dot solar cells (QDSCs) were investigated by frequency dependent capacitance-voltage ( C- V) measurements and photoreflectance (PR) spectroscopy. The C- V results confirmed that the frequency dependent junction capacitance ( C j) of QDSC is sensitive to the carrier exhaustion process through trapping and recapturing in the strain-induced defects and QD states caused by the interface strain between InAs and GaAs materials. As a result, at a low frequency (≤ 200 kHz), the C j of the QDSCs decreased with increasing InAs deposition thickness ( θ), leading to the decrease in carrier concentration ( N d) of the n-GaAs absorber layer due to the carrier losses processes caused by the trapping and re-capturing in the defects and the relatively large QDs. At θ ≤ 2.0 ML, the p-n junction electric field strength ( F pn) of the QDSCs which was evaluated by PR spectra decreased with increasing excitation photon intensity ( I ex) due to the typical field screening effect in the SC structure. On the other hand, the F pn of QDSCs with θ ≥ 2.5 ML approached a constant value with a relatively high I ex, which suggests that the decrease in photo-generated carriers in the QDSC was caused by the re-capturing and trapping process.

Doughnut shape atom traps with arbitrary inclination

NASA Astrophysics Data System (ADS)

Masegosa, R. R. Y.; Moya-Cessa, H.; Chavez-Cerda, S.

2006-02-01

Since the invention of magneto-optical trap (MOT), there have been several experimental and theoretical studies of the density distribution in these devices. To the best of our knowledge, only horizontal orbital traps have been observed, perpendicular to the coil axis. In this work we report the observation of distributions of trapped atoms in pure circular orbits without a nucleus whose orbital plane is tilted up to 90 degrees with respect to the horizontal plane. We have used a stabilized time phase optical array in our experiments and conventional equipment used for MOT.

Self-regulated Gd atom trapping in open Fe nanocorrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, R. X.; Liu, Z.; Miao, B. F.

2014-07-01

Utilizing open Fe nanocorrals built by atom manipulation, we demonstrate self-regulated Gd atom trapping in open quantum corrals. The number of Gd atoms trapped is exactly determined by the diameter of the corral. The quantization can be understood as a self-regulating process, arising from the long-range interaction between Gd atoms and the open corral. We illustrate with arrays of open corrals that such atom trapping can suppress unwanted statistical fluctuations. Our approach opens a potential pathway for nanomaterial design and fabrication with atomic-level precision.

Spatial capture–recapture with partial identity: An application to camera traps

USGS Publications Warehouse

Augustine, Ben C.; Royle, J. Andrew; Kelly, Marcella J.; Satter, Christopher B.; Alonso, Robert S.; Boydston, Erin E.; Crooks, Kevin R.

2018-01-01

Camera trapping surveys frequently capture individuals whose identity is only known from a single flank. The most widely used methods for incorporating these partial identity individuals into density analyses discard some of the partial identity capture histories, reducing precision, and, while not previously recognized, introducing bias. Here, we present the spatial partial identity model (SPIM), which uses the spatial location where partial identity samples are captured to probabilistically resolve their complete identities, allowing all partial identity samples to be used in the analysis. We show that the SPIM outperforms other analytical alternatives. We then apply the SPIM to an ocelot data set collected on a trapping array with double-camera stations and a bobcat data set collected on a trapping array with single-camera stations. The SPIM improves inference in both cases and, in the ocelot example, individual sex is determined from photographs used to further resolve partial identities—one of which is resolved to near certainty. The SPIM opens the door for the investigation of trapping designs that deviate from the standard two camera design, the combination of other data types between which identities cannot be deterministically linked, and can be extended to the problem of partial genotypes.

Lutzomyia spp. (Diptera: Psychodidae) response to olfactory attractant- and light emitting diode-modified Mosquito Magnet X (MM-X) traps.

PubMed

Mann, Rajinder S; Kaufman, Phillip E; Butler, Jerry F

2009-09-01

Mosquito Magnet-X traps were modified for use with blue, green, red, and blue-green-red light-emitting diodes and olfactory attractants to determine the response of Lutzomyia shannoni (Dyar) and Lutzomyia vexator (Coquillett) (Diptera: Psychodidae) field populations to these attractants. Red and blue-green-red-baited traps captured the highest numbers of Lu. shannoni and Lu. vexator, respectively, although, there were no significant differences between the colors. Baiting the traps with CO, attracted significantly higher numbers of Lu. shannoni but showed no effect on Lu. vexator capture. In comparison with CO, alone, Lu. shannoni preferred 1-octen-3-ol and 1-hexen-3-ol (0.05 g per trap) in combination with CO.

Systematic development of input-quantum-limited fluoroscopic imagers based on active-matrix flat-panel technology

NASA Astrophysics Data System (ADS)

Antonuk, Larry E.; Zhao, Qihua; Su, Zhong; Yamamoto, Jin; El-Mohri, Youcef; Li, Yixin; Wang, Yi; Sawant, Amit R.

2004-05-01

The development of fluoroscopic imagers exhibiting performance that is primarily limited by the noise of the incident x-ray quanta, even at very low exposures, remains a highly desirable objective for active matrix flat-panel technology. Previous theoretical and empirical studies have indicated that promising strategies to acheiving this goal include the development of array designs incorporating improved optical collection fill factors, pixel-level amplifiers, or very high-gain photoconductors. Our group is pursuing all three strategies and this paper describes progress toward the systematic development of array designs involving the last approach. The research involved the iterative fabrication and evaluation of a series of prototype imagers incorporating a promising high-gain photoconductive material, mercuric iodide (HgI2). Over many cycles of photoconductor deposition and array evaluation, improvements ina variety of properties have been observed and remaining fundamental challenges have become apparent. For example, process compatibility between the deposited HgI2 and the arrays have been greatly improved, while preserving efficient, prompt signal extraction. As a result, x-ray sensitivities within a factor of two of the nominal limit associated with the single-crystal form of HgI2 have been observed at relatively low electric fields (~0.1 to 0.6 V/μm), for some iterations. In addition, for a number of iterations, performance targets for dark current stability and range of linearity have been met or exceeded. However, spotting of the array, due to localized chemical reactions, is still a concern. Moreover, the dark current, uniformity of pixel response, and degree of charge trapping, though markedly improved for some iterations, require further optimization. Furthermore, achieving the desired performance for all properties simultaneously remains an important goal. In this paper, a broad overview of the progress of the research will be presented, remaining challenges in the development of this photoconductive material will be outlined, and prospects for further improvement will be discussed.

Systems and methods for controlling diesel engine emissions

DOEpatents

Webb, Cynthia Chaffin; Weber, Phillip Anthony; Khair, Magdi K.

2004-06-01

Systems and methods for controlling diesel engine emissions, including, for example, oxides of nitrogen emissions, particulate matter emissions, and the like. The emission control system according to this invention is provided in the exhaust passageway of a diesel engine and includes a catalyst-based particulate filter; and first and second lean NO.sub.x trap systems coupled to the catalyst-based particulate filter. The first and second lean NO.sub.x trap systems are arranged in a parallel flow configuration with each other. Each of the first and second lean NO.sub.x trap systems include a carbon monoxide generating catalyst device, a sulfur trap device, a lean NO.sub.x device, a supplemental fuel injector device, and a plurality of flow diverter devices.

Vertical displacement of Ips Latidens and Ips Pini

Treesearch

Daniel R. Miller

2000-01-01

The effect of semiochemical interruptants was examined for Ips latidens (LeConte) and Ips pini (Say) using artificial trees (tall-traps) consisting of an array of seven Lindgren multiple-funnel traps suspended vertically on a rope ladder. S-(+)- Ipsdienol reduced the numbers of I. latidens captured in (±)-ipsenol...

An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.

PubMed

Jang, Taejin; Baek, Myung-Hyun; Kim, Hyungjin; Park, Byung-Gook

2018-09-01

In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. As drain voltage increases, impact ionization occurs at the drain-channel junction. And these holes created by impact ionization are deposited on the bottom of the body to change the threshold voltage. This feature, the kink effect, is also observed in fully depleted silicon on insulator because grain boundary of the poly-silicon serve as a storage to trap the holes. We simulate the transfer curve depending on the density and position of the grain boundary. The trap density of the grain boundary affects the device characteristics significantly. However similar properties appear except where the grain boundary is located on the drain side.

Electrophoretic build-up of multi nanoparticle array for a highly sensitive immunoassay

PubMed Central

Han, Jin-Hee; Kim, Hee-Joo; Sudheendra, L.; Hass, Elizabeth A.; Gee, Shirley J.; Hammock, Bruce D.; Kennedy, Ian M.

2012-01-01

One of the challenges in shrinking immunoassays to smaller sizes is to immobilize the biological molecules to nanometer-scaled spots. To overcome this complication, we have employed a particle-based immunoassay to create a nanostructured platform with a regular array of sensing elements. The technique makes use of an electrophoretic particle entrapment system (EPES) to immobilize nanoparticles that are coated with biological reagents into wells using a very small trapping potential. To provide useful information for controlling the trapping force and optimal design of the nanoarray, electrophoretic trapping of a nanoparticle was modeled numerically. The trapping efficiency, defined as the fraction of wells occupied by a single particle, was 91%. The performance of the array was demonstrated with a competitive immunoassay for a small molecule analyte, 3-phenoxybenzoic acid (214.2 g mole−1). The limit of detection determined with a basic fluorescence microscope was 0.006 μg l−1 (30 pM); this represented a sixteen-fold improvement in sensitivity compared to a standard 96-well plate-based ELISA; the improvement was attributed to the small size of the sample volume and the presence of light diffraction among factors unique to this structure. The EPES/nanoarray system promises to offer a new standard in applications that require portable, point-of-care and real-time monitoring with high sensitivity. PMID:23021853

Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

NASA Astrophysics Data System (ADS)

Wo, Songtao; Headrick, Randall L.; Anthony, John E.

2012-04-01

We have produced solution-processed thin films of 6,13-bis(tri-isopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trapping in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than 1 volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution-processed small molecule organic semiconductor thin films, where relatively high energy grain boundaries are typically formed. Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trapping, with time constants on the order of 10 s and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate-determining mechanism of the reversible trapping.

Metabolic profile of glyburide in human liver microsomes using LC-DAD-Q-TRAP-MS/MS.

PubMed

Ravindran, Selvan; Basu, Sudipta; Gorti, Santosh Kapil Kumar; Surve, Prashant; Sloka, Navya

2013-05-01

The sulfonylurea urea drug glyburide (glibenclamide) is widely used for the treatment of diabetes milletus and gestational diabetes. In previous studies monohydroxylated metabolites were identified and characterized for glyburide in different species, but the metabolite owing to the loss of cyclohexyl ring was identified only in mouse. Glyburide upon incubation with hepatic microsomes resulted in 10 metabolites for human. The current study identifies new metabolites of glyburide along with the hydroxylated metabolites that were reported earlier. The newly identified drug metabolites are dihydroxylated metabolites, a metabolite owing to the loss of cyclohexyl ring and one owing to hydroxylation with dehydrogenation. Among the 10 identified metabolites, there were six monohydroxylated metabolites, one dihydroxylated metabolite, two metabolites owing to hydroxylation and dehydrogenation, and one metabolite owing to the loss of cyclohexyl ring. New metabolites of glyburide were identified and characterized using liquid chromatography-diode array detector-quadruple-ion trap-mass spectrometry/mass spectrometry (LC-DAD-Q-TRAP-MS/MS). An enhanced mass scan-enhanced product ion scan with information-dependent acquisition mode in a Q-TRAP-MS/MS system was used to characterize the metabolites. Liquid chromatography with diode array detection was used as a complimentary technique to confirm and identify the metabolites. Metabolites formed in higher amounts were detected in both diode array detection and mass spectrometry detection. Copyright © 2012 John Wiley & Sons, Ltd.

Abundance and species richness of snakes along the Middle Rio Grande riparian forest in New Mexico

Treesearch

Heather L. Bateman; Alice Chung-MacCoubrey; Howard L. Snell; Deborah M. Finch

2009-01-01

To understand the effects of removal of non-native plants and fuels on wildlife in the riparian forest of the Middle Rio Grande in New Mexico, we monitored snakes from 2000 to 2006 using trap arrays of drift fences, pitfalls, and funnel traps. We recorded 158 captures of 13 species of snakes from 12 study sites. We captured more snakes in funnel traps than in pitfalls...

X-Ray Absorption Microspectroscopy with Electrostatic Force Microscopy and its Application to Chemical States Mapping

NASA Astrophysics Data System (ADS)

Ishii, M.; Rigopoulos, N.; Poolton, N. R. J.; Hamilton, B.

2007-02-01

A new technique named X-EFM that measures the x-ray absorption fine structure (XAFS) of nanometer objects was developed. In X-EFM, electrostatic force microscopy (EFM) is used as an x-ray absorption detector, and photoionization induced by x-ray absorption of surface electron trapping sites is detected by EFM. An EFM signal with respect to x-ray photon energy provides the XAFS spectra of the trapping sites. We adopted X-EFM to observe Si oxide thin films. An edge jump shift intrinsic to the X-EFM spectrum was found, and it was explained with a model where an electric field between the trapping site and probe deepens the energy level of the inner-shell. A scanning probe under x-rays with fixed photon energy provided the chemical state mapping on the surface.

Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sellers, D. G.; Chen, E. Y.; Doty, M. F.

2016-05-21

We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

NASA Technical Reports Server (NTRS)

Ma, T. P.; Barker, R. C.

1974-01-01

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

Testing the Model of Oscillating Magnetic Traps

NASA Astrophysics Data System (ADS)

Szaforz, Ż.; Tomczak, M.

2015-01-01

The aim of this paper is to test the model of oscillating magnetic traps (the OMT model), proposed by Jakimiec and Tomczak ( Solar Phys. 261, 233, 2010). This model describes the process of excitation of quasi-periodic pulsations (QPPs) observed during solar flares. In the OMT model energetic electrons are accelerated within a triangular, cusp-like structure situated between the reconnection point and the top of a flare loop as seen in soft X-rays. We analyzed QPPs in hard X-ray light curves for 23 flares as observed by Yohkoh. Three independent methods were used. We also used hard X-ray images to localize magnetic traps and soft X-ray images to diagnose thermal plasmas inside the traps. We found that the majority of the observed pulsation periods correlates with the diameters of oscillating magnetic traps, as was predicted by the OMT model. We also found that the electron number density of plasma inside the magnetic traps in the time of pulsation disappearance is strongly connected with the pulsation period. We conclude that the observations are consistent with the predictions of the OMT model for the analyzed set of flares.

Effective sampling range of a synthetic protein-based attractant for Ceratitis capitata (Diptera: Tephritidae).

PubMed

Epsky, Nancy D; Espinoza, Hernán R; Kendra, Paul E; Abernathy, Robert; Midgarden, David; Heath, Robert R

2010-10-01

Studies were conducted in Honduras to determine effective sampling range of a female-targeted protein-based synthetic attractant for the Mediterranean fruit fly, Ceratitis capitata (Wiedemann) (Diptera: Tephritidae). Multilure traps were baited with ammonium acetate, putrescine, and trimethylamine lures (three-component attractant) and sampled over eight consecutive weeks. Field design consisted of 38 traps (over 0.5 ha) placed in a combination of standard and high-density grids to facilitate geostatistical analysis, and tests were conducted in coffee (Coffea arabica L.),mango (Mangifera indica L.),and orthanique (Citrus sinensis X Citrus reticulata). Effective sampling range, as determined from the range parameter obtained from experimental variograms that fit a spherical model, was approximately 30 m for flies captured in tests in coffee or mango and approximately 40 m for flies captured in orthanique. For comparison, a release-recapture study was conducted in mango using wild (field-collected) mixed sex C. capitata and an array of 20 baited traps spaced 10-50 m from the release point. Contour analysis was used to document spatial distribution of fly recaptures and to estimate effective sampling range, defined by the area that encompassed 90% of the recaptures. With this approach, effective range of the three-component attractant was estimated to be approximately 28 m, similar to results obtained from variogram analysis. Contour maps indicated that wind direction had a strong influence on sampling range, which was approximately 15 m greater upwind compared with downwind from the release point. Geostatistical analysis of field-captured insects in appropriately designed trapping grids may provide a supplement or alternative to release-recapture studies to estimate sampling ranges for semiochemical-based trapping systems.

Toward a Micro Gas Chromatograph/Mass Spectrometer (GC/MS) System

NASA Technical Reports Server (NTRS)

Wiberg, D. V.; Eyre, F. B.; Orient, O.; Chutjian, A.; Garkarian, V.

2001-01-01

Miniature mass filters (e.g., quadrupoles, ion traps) have been the subject of several miniaturization efforts. A project is currently in progress at JPL to develop a miniaturized Gas Chromatograph/Mass Spectrometer (GC/MS) system, incorporating and/or developing miniature system components including turbomolecular pumps, scroll type roughing pump, quadrupole mass filter, gas chromatograph, precision power supply and other electronic components. The preponderance of the system elements will be fabricated using microelectromechanical systems (MEMS) techniques. The quadrupole mass filter will be fabricated using an X-ray lithography technique producing high precision, 5x5 arrays of quadrupoles with pole lengths of about 3 mm and a total volume of 27 cubic mm. The miniature scroll pump will also be fabricated using X-ray lithography producing arrays of scroll stages about 3 mm in diameter. The target detection range for the mass spectrometer is 1 to 300 atomic mass units (AMU) with are solution of 0.5 AMU. This resolution will allow isotopic characterization for geochronology, atmospheric studies and other science efforts dependant on the understanding of isotope ratios of chemical species. This paper will discuss the design approach, the current state-of-the art regarding the system components and the progress toward development of key elements. The full system is anticipated to be small enough in mass, volume and power consumption to allow in situ chemical analysis on highly miniaturized science craft for geochronology, atmospheric characterization and detection of life experiments applicable to outer planet roadmap missions.

Enhanced and selective optical trapping in a slot-graphite photonic crystal.

PubMed

Krishnan, Aravind; Huang, Ningfeng; Wu, Shao-Hua; Martínez, Luis Javier; Povinelli, Michelle L

2016-10-03

Applicability of optical trapping tools for nanomanipulation is limited by the available laser power and trap efficiency. We utilized the strong confinement of light in a slot-graphite photonic crystal to develop high-efficiency parallel trapping over a large area. The stiffness is 35 times higher than our previously demonstrated on-chip, near field traps. We demonstrate the ability to trap both dielectric and metallic particles of sub-micron size. We find that the growth kinetics of nanoparticle arrays on the slot-graphite template depends on particle size. This difference is exploited to selectively trap one type of particle out of a binary colloidal mixture, creating an efficient optical sieve. This technique has rich potential for analysis, diagnostics, and enrichment and sorting of microscopic entities.

Analysis and evalaution in the production process and equipment area of the low-cost solar array project. [including modifying gaseous diffusion and using ion implantation

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

High Density Planar High Temperature Superconducting Josephson Junctions Arrays

DTIC Science & Technology

2006-09-01

focusing effects in magnetic field measurements and are more comparable with classical sandwich type Josephson junctions. Low temper- ature (100TC...The result is shown in Figure 4.1(b). The noise temperature calculated from the fit was 71.9 K, which is close to the measurement temperature of 63 K...The additional noise temperature is attributed to the measurement system. Both of the fits produce similar IcR,, 35 WV, and 31 MV for the RSJ and

Shape-coded silica nanotubes for multiplexed bioassay: rapid and reliable magnetic decoding protocols

PubMed Central

He, Bo; Kim, Sung Kyoung; Son, Sang Jun; Lee, Sang Bok

2010-01-01

Aims The recent development of 1D barcode arrays has proved their capabilities to be applicable to highly multiplexed bioassays. This article introduces two magnetic decoding protocols for suspension arrays of shape-coded silica nanotubes to process multiplexed assays rapidly and easily, which will benefit the minimization and automation of the arrays. Methods In the first protocol, the magnetic nanocrystals are incorporated into the inner voids of barcoded silica nanotubes in order to give the nanotubes magnetic properties. The second protocol is performed by trapping the barcoded silica nanotubes onto streptavidin-modified magnetic beads. Results The rapid and easy decoding process was demonstrated by applying the above two protocols to multiplexed assays, resulting in high selectivity. Furthermore, the magnetic bead-trapped barcode nanotubes provided a great opportunity to exclude the use of dye molecules in multiplexed assays by using barcode nanotubes as signals. Conclusion The rapid and easy manipulation of encoded carriers using magnetic properties could be used to develop promising suspension arrays for portable bioassays. PMID:20025466

Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.

PubMed

Gritsenko, Vladimir A; Perevalov, Timofey V; Voronkovskii, Vitalii A; Gismatulin, Andrei A; Kruchinin, Vladimir N; Aliev, Vladimir Sh; Pustovarov, Vladimir A; Prosvirin, Igor P; Roizin, Yakov

2018-01-31

Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaO x films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaO x by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaO x conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaO x films is phonon-assisted tunneling between the traps.

Determination of bulk diffusion lengths for angle-lapped semiconductor material via the scanning electron microscope: A theoretical analysis

NASA Technical Reports Server (NTRS)

Vonroos, O.

1978-01-01

A standard procedure for the determination of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P-N junction and measuring the resultant short circuit current I sub sc as a function of beam position. A detailed analysis of the I sub sc originating from this configuration is presented. It is found that, for a point source excitation, the I sub sc depends very simply on x, the variable distance between the surface and the junction edge. The expression for the I sub sc of a planar junction device is well known. If d, the constant distance between the plane of the surface of the semiconductor and the junction edge in the expression for the I of a planar junction is merely replaced by x, the variable distance of the corresponding angle-lapped junction, an expression results which is correct to within a small fraction of a percent as long as the angle between the surfaces, 2 theta sub 1, is smaller than 10 deg.

Unraveling the mechanism of ultraviolet-induced optical gating in Zn1-x Mg x O nanocrystal solid solution field effect transistors

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Park, Byoungnam

2018-03-01

We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.

Search in 8 TeV proton-proton collisions with the MoEDAL monopole-trapping test array

NASA Astrophysics Data System (ADS)

Pinfold, J.; Soluk, R.; Lacarrère, D.; Katre, A.; Mermod, P.; Bendtz, K.; Milstead, D.

2014-06-01

The magnetic monopole appears in theories of spontaneous gauge symmetry breaking and its existence would explain the quantisation of electric charge. MoEDAL is the latest approved LHC experiment, designed to search directly for monopoles produced in high-energy collisions. It has now taken data for the first time. The MoEDAL detectors are based on two complementary techniques: nuclear-track detectors are sensitive to the high-ionisation signature expected from a monopole, and the magnetic monopole trapper (MMT) relies on the stopping and trapping of monopoles inside an aluminium array which is then analysed with a superconducting magnetometer. The first results obtained with the MoEDAL MMT test array deployed in 2012 are presented. This experiment probes monopoles carrying a multiple of the fundamental unit magnetic charge for the first time at the LHC.

Detailed investigation of the bifurcation diagram of capacitively coupled Josephson junctions in high-Tc superconductors and its self similarity

NASA Astrophysics Data System (ADS)

Hamdipour, Mohammad

2018-04-01

We study an array of coupled Josephson junction of superconductor/insulator/superconductor type (SIS junction) as a model for high temperature superconductors with layered structure. In the current-voltage characteristics of this system there is a breakpoint region in which a net electric charge appear on superconducting layers, S-layers, of junctions which motivate us to study the charge dynamics in this region. In this paper first of all we show a current voltage characteristics (CVC) of Intrinsic Josephson Junctions (IJJs) with N=3 Junctions, then we show the breakpoint region in that CVC, then we try to investigate the chaos in this region. We will see that at the end of the breakpoint region, behavior of the system is chaotic and Lyapunov exponent become positive. We also study the route by which the system become chaotic and will see this route is bifurcation. Next goal of this paper is to show the self similarity in the bifurcation diagram of the system and detailed analysis of bifurcation diagram.

Trapping and dynamic manipulation with magnetomotive photoacoustic imaging of targeted microspheres mimicking metastatic cancer cells trafficking in the vasculature

NASA Astrophysics Data System (ADS)

Wei, Chenwei; Xia, Jinjun; Pelivanov, Ivan; Hu, Xiaoge; Gao, Xiaohu; O'Donnell, Matthew

2012-02-01

Trapping and manipulation of micro-scale objects mimicking metastatic cancer cells in a flow field have been demonstrated with magnetomotive photoacoustic (mmPA) imaging. Coupled contrast agents combining gold nanorods (15 nm × 50 nm; absorption peak around 730 nm) with 15 nm diameter magnetic nanospheres were targeted to 10 μm polystyrene beads recirculating in a 1.6 mm diameter tube mimicking a human peripheral vessel. Targeted objects were then trapped by an external magnetic field produced by a dual magnet system consisting of two disc magnets separated by 6 cm to form a polarizing field (0.04 Tesla in the tube region) to magnetize the magnetic contrast agents, and a custom designed cone magnet array with a high magnetic field gradient (about 0.044 Tesla/mm in the tube region) producing a strong trapping force to magnetized contrast agents. Results show that polystyrene beads linked to nanocomposites can be trapped at flow rates up to 12 ml/min. It is shown that unwanted background in a photoacoustic image can be significantly suppressed by changing the position of the cone magnet array with respect to the tube, thus creating coherent movement of the trapped objects. This study makes mmPA imaging very promising for differential visualization of metastatic cells trafficking in the vasculature.

Reconfigurable electro-optical directed-logic circuit using carrier-depletion micro-ring resonators.

PubMed

Qiu, Ciyuan; Gao, Weilu; Soref, Richard; Robinson, Jacob T; Xu, Qianfan

2014-12-15

Here we demonstrate a reconfigurable electro-optical directed-logic circuit based on a regular array of integrated optical switches. Each 1×1 optical switch consists of a micro-ring resonator with an embedded lateral p-n junction and a micro-heater. We achieve high-speed on-off switching by applying electrical logic signals to the p-n junction. We can configure the operation mode of each switch by thermal tuning the resonance wavelength. The result is an integrated optical circuit that can be reconfigured to perform any combinational logic operation. As a proof-of-principle, we fabricated a multi-spectral directed-logic circuit based on a fourfold array of switches and showed that this circuit can be reconfigured to perform arbitrary two-input logic functions with speeds up to 3  GB/s.

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays.

PubMed

Alam, Maksudul M; Wang, Jun; Guo, Yaoyao; Lee, Stephanie P; Tseng, Hsian-Rong

2005-07-07

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.

Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

PubMed

Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

2016-12-01

Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

Fabrication of two-layer poly(dimethyl siloxane) devices for hydrodynamic cell trapping and exocytosis measurement with integrated indium tin oxide microelectrodes arrays

PubMed Central

Gao, Changlu; Sun, Xiuhua; Gillis, Kevin D.

2016-01-01

The design, fabrication and test of a microfluidic cell trapping device to measure single cell exocytosis were reported. Research on the patterning of double layer template based on repetitive standard photolithography of AZ photoresist was investigated. The replicated poly(dimethyl siloxane) devices with 2.5 μm deep channels were proved to be efficient for stopping cells. Quantal exocytosis measurement can be achieved by targeting single or small clumps of chromaffin cells on top of the 10 μm ×10 μm indium tin oxide microelectrodes arrays with the developed microdevice. And about 72% of the trapping sites can be occupied by cells with hydrodynamic trapping method and the recorded amperometric signals are comparable to the results with traditional carbon fiber microelectrodes. The method of manufacturing the microdevices is simple, low-cost and easy to perform. The manufactured device offers a platform for the high throughput detection of quantal catecholamine exocytosis from chromaffin cells with sufficient sensitivity and broad application. PMID:23329291

Engineered spin-spin interactions on a 2D array of trapped ions

NASA Astrophysics Data System (ADS)

Britton, Joe; Sawyer, Brian; Bollinger, John

2013-05-01

We work with laser cooled 9Be+ ions confined in a Penning trap to simulate quantum magnetic interactions. The valence electron of each ion behaves as an ideal spin- 1 / 2 particle. We recently demonstrated a uniform anti-ferromagnetic Ising interaction on a naturally occurring two-dimensional (2D) triangular crystal of 100 < N < 350 ions. The Ising interaction is generated by a spin-dependent optical dipole force (ODF). For spins separated by distance d, we show that the range can be tuned according to (d / d 0)-a, for 0 < a < 3 . For different operating parameters we can also generate an infinite range ferromagnetic Ising interaction. We also use the ODF for spectroscopy and thermometry of the normal modes of the trapped ion array. A detailed understanding of the modes is important because they mediate the spin-spin interactions. This work is supported by NIST and the DARPA OLE program.

Automated Array Assembly, Phase 2

NASA Technical Reports Server (NTRS)

Carbajal, B. G.

1979-01-01

The Automated Array Assembly Task, Phase 2 of the Low Cost Silicon Solar Array Project is a process development task. The contract provides for the fabrication of modules from large area tandem junction cells (TJC). During this quarter, effort was focused on the design of a large area, approximately 36 sq cm, TJC and process verification runs. The large area TJC design was optimized for minimum I squared R power losses. In the TJM activity, the cell-module interfaces were defined, module substrates were formed and heat treated and clad metal interconnect strips were fabricated.

Enhanced performance of a structured cyclo olefin copolymer-based amorphous silicon solar cell

NASA Astrophysics Data System (ADS)

Zhan, Xinghua; Chen, Fei; Gao, Mengyu; Tie, Shengnian; Gao, Wei

2017-07-01

The submicron array was fabricated onto a cyclo olefin copolymer (COC) film by a hot embossing method. An amorphous silicon p-i-n junction and transparent conductive layers were then deposited onto it through a plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering. The efficiency of the fabricated COC-based solar cell was measured and the result demonstrated 18.6% increase of the solar cell efficiency when compared to the sample without array structure. The imprinted polymer solar cells with submicron array indeed increase their efficiency.

White LED performance

NASA Astrophysics Data System (ADS)

Gu, Yimin; Narendran, Nadarajah; Freyssinier, Jean Paul

2004-10-01

Two life tests were conducted to compare the effects of drive current and ambient temperature on the degradation rate of 5 mm and high-flux white LEDs. Tests of 5 mm white LED arrays showed that junction temperature increases produced by drive current had a greater effect on the rate of light output degradation than junction temperature increases from ambient heat. A preliminary test of high-flux white LEDs showed the opposite effect, with junction temperature increases from ambient heat leading to a faster depreciation. However, a second life test is necessary to verify this finding. The dissimilarity in temperature effect among 5 mm and high-flux LEDs is likely caused by packaging differences between the two device types.

Revealing hole trapping in zinc oxide nanoparticles by time-resolved X-ray spectroscopy

DOE PAGES

Penfold, Thomas J.; Szlachetko, Jakub; Santomauro, Fabio G.; ...

2018-02-02

Nanostructures of transition metal oxides (TMO), such as ZnO, have attracted considerable interest for solar-energy conversion and photocatalysis. For the latter, trapping of charge carriers has an essential role. The probing of electron trapping in the conduction band of room temperature photoexcited TMOs has recently become possible owing to the emergence of time-resolved element-sensitive methods, such as X-ray spectroscopy. However, because the valence band of TMOs is dominated by the oxygen 2p orbitals,holes have so far escaped observation. Herein we use a novel dispersive X-ray emission spectrometer combined with X-ray absorption spectroscopy to directly probe the charge carrier relaxation andmore » trapping pro-cesses in ZnO nanoparticles after above band-gap photoexcitation. Here, our results, supported by simulations, demonstrate that within our temporal resolution of 80 ps, photo-excited holes are trapped at singly charged oxygen vacancies, turning them into doubly charged vacancies, which causes an outward displacement by approximately 15% of the four surrounding Zn atoms away from the central vacancy. These traps recombine radiatively with the delocalised electrons of the conduction band yielding the commonly observed green luminescence. This identification of the hole traps and their evolution provides new insight for future developments of TMO-based nanodevices.« less

Revealing hole trapping in zinc oxide nanoparticles by time-resolved X-ray spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Penfold, Thomas J.; Szlachetko, Jakub; Santomauro, Fabio G.

Nanostructures of transition metal oxides (TMO), such as ZnO, have attracted considerable interest for solar-energy conversion and photocatalysis. For the latter, trapping of charge carriers has an essential role. The probing of electron trapping in the conduction band of room temperature photoexcited TMOs has recently become possible owing to the emergence of time-resolved element-sensitive methods, such as X-ray spectroscopy. However, because the valence band of TMOs is dominated by the oxygen 2p orbitals,holes have so far escaped observation. Herein we use a novel dispersive X-ray emission spectrometer combined with X-ray absorption spectroscopy to directly probe the charge carrier relaxation andmore » trapping pro-cesses in ZnO nanoparticles after above band-gap photoexcitation. Here, our results, supported by simulations, demonstrate that within our temporal resolution of 80 ps, photo-excited holes are trapped at singly charged oxygen vacancies, turning them into doubly charged vacancies, which causes an outward displacement by approximately 15% of the four surrounding Zn atoms away from the central vacancy. These traps recombine radiatively with the delocalised electrons of the conduction band yielding the commonly observed green luminescence. This identification of the hole traps and their evolution provides new insight for future developments of TMO-based nanodevices.« less

Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms.

PubMed

Pruttivarasin, Thaned; Katori, Hidetoshi

2015-11-01

We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.

Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pruttivarasin, Thaned, E-mail: thaned.pruttivarasin@riken.jp; Katori, Hidetoshi; Innovative Space-Time Project, ERATO, JST, Bunkyo-ku, Tokyo 113-8656

We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.

Nonlinear waves in subwavelength waveguide arrays: evanescent bands and the "phoenix soliton".

PubMed

Peleg, Or; Segev, Mordechai; Bartal, Guy; Christodoulides, Demetrios N; Moiseyev, Nimrod

2009-04-24

We formulate wave propagation in arrays of subwavelength waveguides with sharp index contrasts and demonstrate the collapse of bands into evanescent modes and lattice solitons with superluminal phase velocity. We find a self-reviving soliton ("phoenix soliton") comprised of coupled forward- and backward-propagating light, originating solely from evanescent bands. In the linear regime, all Bloch waves comprising this beam decay, whereas a proper nonlinearity assembles them into a propagating self-trapped beam. Finally, we simulate the dynamics of such a beam and observe breakup into temporal pulses, indicating a new kind of slow-light gap solitons, trapped in time and in one transverse dimension.

Parallel alignment of bacteria using near-field optical force array for cell sorting

NASA Astrophysics Data System (ADS)

Zhao, H. T.; Zhang, Y.; Chin, L. K.; Yap, P. H.; Wang, K.; Ser, W.; Liu, A. Q.

2017-08-01

This paper presents a near-field approach to align multiple rod-shaped bacteria based on the interference pattern in silicon nano-waveguide arrays. The bacteria in the optical field will be first trapped by the gradient force and then rotated by the scattering force to the equilibrium position. In the experiment, the Shigella bacteria is rotated 90 deg and aligned to horizontal direction in 9.4 s. Meanwhile, 150 Shigella is trapped on the surface in 5 min and 86% is aligned with angle < 5 deg. This method is a promising toolbox for the research of parallel single-cell biophysical characterization, cell-cell interaction, etc.

Transitioning Streaming to Trapping in DC Insulator-based Dielectrophoresis for Biomolecules

PubMed Central

Camacho-Alanis, Fernanda; Gan, Lin; Ros, Alexandra

2012-01-01

Exploiting dielectrophoresis (DEP) to concentrate and separate biomolecules has recently shown large potential as a microscale bioanalytical tool. Such efforts however require tailored devices and knowledge of all interplaying transport mechanisms competing with dielectrophoresis (DEP). Specifically, a strong DEP contribution to the overall transport mechanism is necessary to exploit DEP of biomolecules for analytical applications such as separation and fractionation. Here, we present improved microfluidic devices combining optical lithography and focused ion beam milling (FIBM) for the manipulation of DNA and proteins using insulator-based dielectrophoresis (iDEP) and direct current (DC) electric fields. Experiments were performed on an elastomer platform forming the iDEP microfluidic device with integrated nanoposts and nanopost arrays. Microscale and nanoscale iDEP was studied for λ-DNA (48.5 kbp) and the protein bovine serum albumin (BSA). Numerical simulations were adapted to the various tested geometries revealing excellent qualitative agreement with experimental observations for streaming and trapping DEP. Both the experimental and simulation results indicate that DC iDEP trapping for λ-DNA occurs with tailored nanoposts fabricated via FIBM. Moreover, streaming iDEP concentration of BSA is improved with integrated nanopost arrays by a factor of 45 compared to microfabricated arrays. PMID:23441049

A new quasi-thermal trap model for solar flare hard X-ray bursts - An electrostatic trap model

NASA Technical Reports Server (NTRS)

Spicer, D. S.; Emslie, A. G.

1988-01-01

A new quasi-thermal trap model of solar flare hard X-ray bursts is presented. The new model utilizes the trapping ability of a magnetic mirror and a magnetic field-aligned electrostatic potential produced by differences in anisotropies of the electron and ion distribution function. It is demonstrated that this potential can, together with the magnetic mirror itself, effectively confine electrons in a trap, thereby enhancing their bremsstrahlung yield per electron. This analysis makes even more untenable models involving precipitation of the bremsstrahlung-producing electrons onto a cold target.

Future mission opportunities and requirements for advanced space photovoltaic energy conversion technology

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1990-01-01

The variety of potential future missions under consideration by NASA will impose a broad range of requirements on space solar arrays, and mandates the development of new solar cells which can offer a wide range of capabilities to mission planners. Major advances in performance have recently been achieved at several laboratories in a variety of solar cell types. Many of those recent advances are reviewed, the areas are examined where possible improvements are yet to be made, and the requirements are discussed that must be met by advanced solar cell if they are to be used in space. The solar cells of interest include single and multiple junction cells which are fabricated from single crystal, polycrystalline and amorphous materials. Single crystal cells on foreign substrates, thin film single crystal cells on superstrates, and multiple junction cells which are either mechanically stacked, monolithically grown, or hybrid structures incorporating both techniques are discussed. Advanced concentrator array technology for space applications is described, and the status of thin film, flexible solar array blanket technology is reported.

Enhancing light absorption within the carrier transport length in quantum junction solar cells.

PubMed

Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

2015-09-10

Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm², a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

Collection of Culicoides spp. with four light trap models during different seasons in the Balearic Islands.

PubMed

del Río, R; Monerris, M; Miquel, M; Borràs, D; Calvete, C; Estrada, R; Lucientes, J; Miranda, M A

2013-07-01

Bluetongue (BT) is a viral disease that affects ruminants, being especially pathogenic in certain breeds of sheep. Its viral agent (bluetongue virus; BTV) is transmitted by several species of Culicoides biting midges (Diptera: Ceratopogonidae). Different models of suction light traps are being used in a number of countries for the collection of BTV vector species. To determine the relative effectiveness of different light traps under field conditions, four traps (Onderstepoort, Mini-CDC, Rieb and Pirbright) were compared. These traps were rotated between four sites on a cattle farm in Mallorca (Balearic Islands, Spain) for several non-consecutive nights. Results showed remarkable disparities in the efficacy of the traps for the collection of Culicoides midges. The highest number of midges collected in the Onderstepoort trap (x¯±SD=62±94.2) was not significantly different from that collected in the Mini-CDC (x¯±SD=58±139.2). The Rieb trap collected the lowest number of midges (x¯±SD=3±4.0). Significantly higher mean numbers of midges were collected in the Onderstepoort than in either the Pirbright (P=0.002) or Rieb traps (P=0.008). There were also differences in the Culicoides species composition as determine with the various traps. These results indicate that the Onderstepoort or Mini-CDC traps will be more effective than either the Rieb or Pirbright traps for the collection of large numbers of Culicoides midges. Copyright © 2013 Elsevier B.V. All rights reserved.

Ion traps fabricated in a CMOS foundry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehta, K. K.; Ram, R. J.; Eltony, A. M.

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size.more » This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.« less

Thalamic modulation of cingulate seizure activity via the regulation of gap junctions in mice thalamocingulate slice.

PubMed

Chang, Wei-Pang; Wu, José Jiun-Shian; Shyu, Bai-Chuang

2013-01-01

The thalamus is an important target for deep brain stimulation in the treatment of seizures. However, whether the modulatory effect of thalamic inputs on cortical seizures occurs through the modulation of gap junctions has not been previously studied. Therefore, we tested the effects of different gap junction blockers and couplers in a drug-resistant seizure model and studied the role of gap junctions in the thalamic modulation on cortical seizures. Multielectrode array and calcium imaging were used to record the cortical seizures induced by 4-aminopyridine (250 µM) and bicuculline (5-50 µM) in a novel thalamocingulate slice preparation. Seizure-like activity was significantly attenuated by the pan-gap junction blockers carbenoxolone and octanol and specific neuronal gap junction blocker mefloquine. The gap junction coupler trimethylamine significantly enhanced seizure-like activity. Gap junction blockers did not influence the initial phase of seizure-like activity, but they significantly decreased the amplitude and duration of the maintenance phase. The development of seizures is regulated by extracellular potassium concentration. Carbenoxolone partially restored the amplitude and duration after removing the thalamic inputs. A two-dimensional current source density analysis showed that the sink and source signals shifted to deeper layers after removing the thalamic inputs during the clonic phase. These results indicate that the regulatory mechanism of deep brain stimulation in the thalamus occurs partially though gap junctions.

Thalamic Modulation of Cingulate Seizure Activity Via the Regulation of Gap Junctions in Mice Thalamocingulate Slice

PubMed Central

Chang, Wei-Pang; Wu, José Jiun-Shian; Shyu, Bai-Chuang

2013-01-01

The thalamus is an important target for deep brain stimulation in the treatment of seizures. However, whether the modulatory effect of thalamic inputs on cortical seizures occurs through the modulation of gap junctions has not been previously studied. Therefore, we tested the effects of different gap junction blockers and couplers in a drug-resistant seizure model and studied the role of gap junctions in the thalamic modulation on cortical seizures. Multielectrode array and calcium imaging were used to record the cortical seizures induced by 4-aminopyridine (250 µM) and bicuculline (5–50 µM) in a novel thalamocingulate slice preparation. Seizure-like activity was significantly attenuated by the pan-gap junction blockers carbenoxolone and octanol and specific neuronal gap junction blocker mefloquine. The gap junction coupler trimethylamine significantly enhanced seizure-like activity. Gap junction blockers did not influence the initial phase of seizure-like activity, but they significantly decreased the amplitude and duration of the maintenance phase. The development of seizures is regulated by extracellular potassium concentration. Carbenoxolone partially restored the amplitude and duration after removing the thalamic inputs. A two-dimensional current source density analysis showed that the sink and source signals shifted to deeper layers after removing the thalamic inputs during the clonic phase. These results indicate that the regulatory mechanism of deep brain stimulation in the thalamus occurs partially though gap junctions. PMID:23690968

Smad ubiquitination regulatory factor-2 controls gap junction intercellular communication by modulating endocytosis and degradation of connexin43.

PubMed

Fykerud, Tone Aase; Kjenseth, Ane; Schink, Kay Oliver; Sirnes, Solveig; Bruun, Jarle; Omori, Yasufumi; Brech, Andreas; Rivedal, Edgar; Leithe, Edward

2012-09-01

Gap junctions consist of arrays of intercellular channels that enable adjacent cells to communicate both electrically and metabolically. Gap junction channels are made of a family of integral membrane proteins called connexins, of which the best-studied member is connexin43. Gap junctions are dynamic plasma membrane domains, and connexin43 has a high turnover rate in most tissue types. However, the mechanisms involved in the regulation of connexin43 endocytosis and transport to lysosomes are still poorly understood. Here, we demonstrate by live-cell imaging analysis that treatment of cells with 12-O-tetradecanoylphorbol 13-acetate (TPA) induces endocytosis of subdomains of connexin43 gap junctions. The internalized, connexin43-enriched vesicles were found to fuse with early endosomes, which was followed by transport of connexin43 to the lumen of early endosomes. The HECT E3 ubiquitin ligase smad ubiquitination regulatory factor-2 (Smurf2) was found to be recruited to connexin43 gap junctions in response to TPA treatment. Depletion of Smurf2 by small interfering RNA resulted in enhanced levels of connexin43 gap junctions between adjacent cells and increased gap junction intercellular communication. Smurf2 depletion also counteracted the TPA-induced endocytosis and degradation of connexin43. Collectively, these data identify Smurf2 as a novel regulator of connexin43 gap junctions.

Space Photovoltaic Research and Technology, 1989

NASA Technical Reports Server (NTRS)

1991-01-01

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

PubMed

Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

2017-11-10

Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 μm

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Jiang, Xudong; Patel, Ketan; Slomkowski, Krystyna; Koch, Tim; Rangwala, Sabbir; Zalud, Peter F.; Yu, Young; Tower, John; Ferraro, Joseph

2009-05-01

We report on the development of 32 x 32 focal plane arrays (FPAs) based on InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) designed for use in three-dimensional (3-D) laser radar imaging systems at 1064 nm. To our knowledge, this is the first realization of FPAs for 3-D imaging that employ a planar-passivated buried-junction InP-based GmAPD device platform. This development also included the design and fabrication of custom readout integrate circuits (ROICs) to perform avalanche detection and time-of-flight measurements on a per-pixel basis. We demonstrate photodiode arrays (PDAs) with a very narrow breakdown voltage distribution width of 0.34 V, corresponding to a breakdown voltage total variation of less than +/- 0.2%. At an excess bias voltage of 3.3 V, which provides 40% pixel-level single photon detection efficiency, we achieve average dark count rates of 2 kHz at an operating temperature of 248 K. We present the characterization of optical crosstalk induced by hot carrier luminescence during avalanche events, where we show that the worst-case crosstalk probability per pixel, which occurs for nearest neighbors, has a value of less than 1.6% and exhibits anisotropy due to isolation trench etch geometry. To demonstrate the FPA response to optical density variations, we show a simple image of a broadened optical beam.

Photovoltaic cell array

NASA Technical Reports Server (NTRS)

Eliason, J. T. (Inventor)

1976-01-01

A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

Dark Current Reduction of IR Detectors

DTIC Science & Technology

2017-10-19

demonstrating a novel dark current reduction approach for dense infrared detector arrays. This technique is based on the diffusion control junction (DCJ...fabricate and test detector arrays with and without DCJs on the same wafer and demonstrate the effectiveness of the DCJ approach in reducing dark current...subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE

Quasiparticle trapping and the density of states in superconducting proximity structures

NASA Astrophysics Data System (ADS)

Warburton, P. A.; Blamire, M. G.

1994-08-01

An experimental study of quasiparticle trapping in epitaxial and polycrystalline Ta films on epitaxial Nb is presented using three-terminal double tunnel junction devices. It is shown that polycrystalline Ta is a more effective trap than epitaxial Ta. The experimentally measured tunneling density of states is used to calculate the inelastic quasiparticle scattering rates in the two types of Ta using the standard theory of Kaplan et a. (1976).The agreement of this calculation with the experimental results shows that the tunneling density of states may be used to determine scattering rates in proximitized superconducting films whose thickness is greater than the coherence length. This result is important since no existing theory satisfactorily describes the density of states in such proximity structures, which are currently being developed for use in high-resolution particle spectrometers.

Power System Mass Analysis for Hydrogen Reduction Oxygen Production on the Lunar Surface

NASA Technical Reports Server (NTRS)

Colozza, Anthony J.

2009-01-01

The production of oxygen from the lunar regolith requires both thermal and electrical power in roughly similar proportions. This unique power requirement is unlike most applications on the lunar surface. To efficiently meet these requirements, both solar PV array and solar concentrator systems were evaluated. The mass of various types of photovoltaic and concentrator based systems were calculated to determine the type of power system that provided the highest specific power. These were compared over a range of oxygen production rates. Also a hybrid type power system was also considered. This system utilized a photovoltaic array to produce the electrical power and a concentrator to provide the thermal power. For a single source system the three systems with the highest specific power were a flexible concentrator/Stirling engine system, a rigid concentrator/Stirling engine system and a tracking triple junction solar array system. These systems had specific power values of 43, 34, and 33 W/kg, respectively. The hybrid power system provided much higher specific power values then the single source systems. The best hybrid combinations were the triple junction solar array with the flexible concentrator and the rigid concentrator. These systems had a specific power of 81 and 68 W/kg, respectively.

Tapered laser rods as a means of minimizing the path length of trapped barrel mode rays

DOEpatents

Beach, Raymond J.; Honea, Eric C.; Payne, Stephen A.; Mercer, Ian; Perry, Michael D.

2005-08-30

By tapering the diameter of a flanged barrel laser rod over its length, the maximum trapped path length of a barrel mode can be dramatically reduced, thereby reducing the ability of the trapped spontaneous emission to negatively impact laser performance through amplified spontaneous emission (ASE). Laser rods with polished barrels and flanged end caps have found increasing application in diode array end-pumped laser systems. The polished barrel of the rod serves to confine diode array pump light within the rod. In systems utilizing an end-pumping geometry and such polished barrel laser rods, the pump light that is introduced into one or both ends of the laser rod, is ducted down the length of the rod via the total internal reflections (TIRs) that occur when the light strikes the rod's barrel. A disadvantage of using polished barrel laser rods is that such rods are very susceptible to barrel mode paths that can trap spontaneous emission over long path lengths. This trapped spontaneous emission can then be amplified through stimulated emission resulting in a situation where the stored energy available to the desired lasing mode is effectively depleted, which then negatively impacts the laser's performance, a result that is effectively reduced by introducing a taper onto the laser rod.

Dielectric properties of biological tissues in which cells are connected by communicating junctions

NASA Astrophysics Data System (ADS)

Asami, Koji

2007-06-01

The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities Pj, the low-frequency (LF) relaxation curve became broader, especially at Pj of 0.2-0.5, and its intensity was proportional to Pj up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues.

Optical trapping via guided resonance modes in a Slot-Suzuki-phase photonic crystal lattice.

PubMed

Ma, Jing; Martínez, Luis Javier; Povinelli, Michelle L

2012-03-12

A novel photonic crystal lattice is proposed for trapping a two-dimensional array of particles. The lattice is created by introducing a rectangular slot in each unit cell of the Suzuki-Phase lattice to enhance the light confinement of guided resonance modes. Large quality factors on the order of 10⁵ are predicted in the lattice. A significant decrease of the optical power required for optical trapping can be achieved compared to our previous design.

Augmented longitudinal acoustic trap for scalable microparticle enrichment.

PubMed

Cui, M; Binkley, M M; Shekhani, H N; Berezin, M Y; Meacham, J M

2018-05-01

We introduce an acoustic microfluidic device architecture that locally augments the pressure field for separation and enrichment of targeted microparticles in a longitudinal acoustic trap. Pairs of pillar arrays comprise "pseudo walls" that are oriented perpendicular to the inflow direction. Though sample flow is unimpeded, pillar arrays support half-wave resonances that correspond to the array gap width. Positive acoustic contrast particles of supracritical diameter focus to nodal locations of the acoustic field and are held against drag from the bulk fluid motion. Thus, the longitudinal standing bulk acoustic wave (LSBAW) device achieves size-selective and material-specific separation and enrichment of microparticles from a continuous sample flow. A finite element analysis model is used to predict eigenfrequencies of LSBAW architectures with two pillar geometries, slanted and lamellar. Corresponding pressure fields are used to identify longitudinal resonances that are suitable for microparticle enrichment. Optimal operating conditions exhibit maxima in the ratio of acoustic energy density in the LSBAW trap to that in inlet and outlet regions of the microchannel. Model results guide fabrication and experimental evaluation of realized LSBAW assemblies regarding enrichment capability. We demonstrate separation and isolation of 20  μ m polystyrene and ∼10  μ m antibody-decorated glass beads within both pillar geometries. The results also establish several practical attributes of our approach. The LSBAW device is inherently scalable and enables continuous enrichment at a prescribed location. These features benefit separations applications while also allowing concurrent observation and analysis of trap contents.

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE PAGES

Gul, R.; Roy, U. N.; Camarda, G. S.; ...

2017-03-28

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; Camarda, G. S.

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

Evaluation of various models of propane-powered mosquito traps.

PubMed

Kline, Daniel L

2002-06-01

Large cage and field studies were conducted to determine the efficacy of various models of propane-powered mosquito traps. These traps utilized counterflow technology in conjunction with catalytic combustion to produce attractants (carbon dioxide, water vapor, and heat) and a thermoelectric generator that converted excess heat into electricity for stand-alone operation. The cage studies showed that large numbers of Aedes aegypti and Ochlerotatus taeniorhynchus were captured and that each progressive model resulted in increased trapping efficiency. In several field studies against natural populations of mosquitoes two different propane traps were compared against two other trap systems, the professional (PRO) and counterflow geometry (CFG) traps. In these studies the propane traps consistently caught more mosquitoes than the PRO trap and significantly fewer mosquitoes than the CFG traps. The difference in collection size between the CFG and propane traps was due mostly to Anopheles crucians. In spring 1997 the CFG trap captured 3.6X more An. crucians than the Portable Propane (PP) model and in spring 1998 it captured 6.3X more An. crucians than the Mosquito Magnet Beta-1 (MMB-1) trap. Both the PP and MMB-1 captured slightly more Culex spp. than the CFG trap.

Design and Performance of a Triple Source Air Mass Zero Solar Simulator

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Scheiman, David; Snyder, David

2005-01-01

Simulating the sun in a laboratory for the purpose of measuring solar cells has long been a challenge for engineers and scientists. Multi-junction cells demand higher fidelity of a solar simulator than do single junction cells, due to a need for close spectral matching as well as AM0 intensity. A GaInP/GaAs/Ge solar cell for example, requires spectral matching in three distinct spectral bands (figure 1). A commercial single source high-pressure xenon arc solar simulator such as the Spectrolab X-25 at NASA Glenn Research Center, can match the top two junctions of a GaInP/GaAs/Ge cell to within 1.3% mismatch, with the GaAs cell receiving slightly more current than required. The Ge bottom cell however, is mismatched +8.8%. Multi source simulators are designed to match the current for all junctions but typically have small illuminated areas, less uniformity and less beam collimation compared to an X-25 simulator. It was our intent when designing a multi source simulator to preserve as many aspects of the X-25 while adding multi-source capability.

Ultrafast photocarrier dynamics related to defect states of Si1-xGex nanowires measured by optical pump-THz probe spectroscopy.

PubMed

Bae, Jung Min; Lee, Woo-Jung; Jung, Seonghoon; Ma, Jin Won; Jeong, Kwang-Sik; Oh, Seung Hoon; Kim, Seongsin M; Suh, Dongchan; Song, Woobin; Kim, Sunjung; Park, Jaehun; Cho, Mann-Ho

2017-06-14

Slightly tapered Si 1-x Ge x nanowires (NWs) (x = 0.29-0.84) were synthesized via a vapor-liquid-solid procedure using Au as a catalyst. We measured the optically excited carrier dynamics of Si 1-x Ge x NWs as a function of Ge content using optical pump-THz probe spectroscopy. The measured -ΔT/T 0 signals of Si 1-x Ge x NWs were converted into conductivity in the THz region. We developed a fitting formula to apply to indirect semiconductors such as Si 1-x Ge x , which explains the temporal population of photo-excited carriers in the band structure and the relationship between the trapping time and the defect states on an ultrafast time scale. From the fitting results, we extracted intra- and inter-valley transition times and trapping times of electrons and holes of Si 1-x Ge x NWs as a function of Ge content. On the basis of theoretical reports, we suggest a physical model to interpret the trapping times related to the species of interface defect states located at the oxide/NW: substoichiometric oxide states of Si(Ge) 0+,1+,2+ , but not Si(Ge) 3+ , could function as defect states capturing photo-excited electrons or holes and could determine the different trapping times of electrons and holes depending on negatively or neutrally charged states.

Effect of ultraviolet illumination on the charge trapping behaviour in SiN(x)/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Kim, C. H.; Han, I. K.; Lee, J. I.; Kang, K. N.; Kwon, S. D.; Choe, B.; Park, H. L.; Her, J.; Lim, H.

1994-04-01

In this work, we investigated the effect of ultraviolet illumination, which is known to generate silicon dangling bonds, on the charge trapping behaviors, utilizing the constant capacitance technique in SiN(x)/InP structure where conventional PE CVD was used to form the SiN films on InP. We found different behaviors of this structure with ultraviolet illumination compared to the case of SiN(x)/Si structure. Both the Si-rich condition during PE CVD and ultraviolet illumination seem to not only increase the number of traps but also broaden the energy level of the traps in the insulator near the SiN(x)/InP interface. In all cases (N-rich, Si-rich, with and without ultraviolet illumination) the amphoteric nature of the traps has been observed, which is a characteristic of Si-dangling bonds. Also, the effect of ultraviolet photons on the interface of SiN(x)/InP, especially in correlation with the deficiency of phosphorus at the interface, is discussed considering the existence of net negative fixed charges at the interface.

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

PubMed Central

Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

2012-01-01

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only. Introduction Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested. Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10. The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only. PMID:22805108

DENSITY: software for analysing capture-recapture data from passive detector arrays

USGS Publications Warehouse

Efford, M.G.; Dawson, D.K.; Robbins, C.S.

2004-01-01

A general computer-intensive method is described for fitting spatial detection functions to capture-recapture data from arrays of passive detectors such as live traps and mist nets. The method is used to estimate the population density of 10 species of breeding birds sampled by mist-netting in deciduous forest at Patuxent Research Refuge, Laurel, Maryland, U.S.A., from 1961 to 1972. Total density (9.9 ? 0.6 ha-1 mean ? SE) appeared to decline over time (slope -0.41 ? 0.15 ha-1y-1). The mean precision of annual estimates for all 10 species pooled was acceptable (CV(D) = 14%). Spatial analysis of closed-population capture-recapture data highlighted deficiencies in non-spatial methodologies. For example, effective trapping area cannot be assumed constant when detection probability is variable. Simulation may be used to evaluate alternative designs for mist net arrays where density estimation is a study goal.

Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

NASA Astrophysics Data System (ADS)

Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

2018-02-01

Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Space Environment Information System (SPENVIS)

NASA Astrophysics Data System (ADS)

Kruglanski, M.; Messios, N.; de Donder, E.; Gamby, E.; Calders, S.; Hetey, L.; Evans, H.

2009-04-01

SPENVIS is an ESA operational software developed and maintained at BIRA-IASB since 1996. It provides standardized access to most of the recent models of the hazardous space environment, through a user-friendly Web interface (http://www.spenvis.oma.be/). The system allows spacecraft engineers to perform a rapid analysis of environmental problems related to natural radiation belts, solar energetic particles, cosmic rays, plasmas, gases, magnetic fields and micro-particles. Various reporting and graphical utilities and extensive help facilities are included to allow engineers with relatively little familiarity to produce reliable results. SPENVIS also contains an active, integrated version of the ECSS Space Environment Standard and access to in-flight data on the space environment. Although SPENVIS in the first place is designed to help spacecraft engineers, it is also used by technical universities in their educational programs. At present more than 4000 users are registered. With SPENVIS, one can generate a spacecraft trajectory or a coordinate grid and then calculate: geomagnetic coordinates; trapped proton and electron fluxes; solar proton fluences; cosmic ray fluxes; radiation doses (ionising and non-ionising) for simple geometries; a sectoring analysis for dose calculations in more complex geometries; damage equivalent fluences for Si, GaAs and multi-junction solar cells; Geant4 Monte Carlo analysis for doses and pulse height rates in planar and spherical shields; ion LET and flux spectra and single event upset rates; trapped proton flux anisotropy; atmospheric and ionospheric densities and temperatures; atomic oxygen erosion depths; surface and internal charging characteristics; solar array current collections and power losses; wall damage. The new version of SPENVIS (to be released in January 2009) also allows mission analysis for Mars and Jupiter.

Increased x-ray conversion efficiency from ultra high contrast, relativistic laser pulse irradiation of large aspect ratio, vertically aligned nanowires

NASA Astrophysics Data System (ADS)

Hollinger, R. C.; Bargsten, C.; Shlyaptsev, V. N.; Kaymak, V.; Pukhov, A.; Capeluto, M. G.; Wang, Y.; Wang, S.; Rockwood, A.; Curtis, A.; Rocca, J. J.

2016-10-01

Recent experiments at Colorado State University have shown that the effective trapping of clean, Joule-level fs laser pulses of relativistic intensity in arrays of high aspect ratio aligned nanowire creates multi-kev, near solid density, large scale (>4um deep) plasmas. The drastically decreased radiative life time and increased hydrodynamic cooling time from these plasmas increases the x-ray conversion efficiency. We measured a record conversion efficiency of 10% into hv>1KeV photons (2pi steradians), and of 0.3% for hv>6KeV. The experiments used Au and Ni nanowires of 55nm, 80nm and 100nm in diameter with 12% of solid density irradiated by high contrast (>1012) pulses of 60fs FWHM duration from a frequency doubled Ti:Sa laser at intensities of I =5x1019Wcm-2. We also present preliminary results on x-ray emission from Rhodium nanowires in the 19-22KeV range and demonstrate the potential of this picosecond X-ray source in flash radiography. This work was supported by the Fusion Energy Program, Office of Science of the U.S Department of Energy, and by the Defense Threat Reduction Agency Grant HDTRA-1-10-1-0079.

Further developments of series-connected superconducting tunnel junction to radiation detection

NASA Astrophysics Data System (ADS)

Kurakado, Masahiko; Ohsawa, Daisuke; Katano, Rintaro; Ito, Shin; Isozumi, Yasuhito

1997-10-01

One of the promising radiation detection devices for various practical applications is the series-connected superconducting tunnel junction (STJ) detector. In this article, interesting topics of the detectors are described since our previous work: e.g., more than two order higher detection efficiency compared with single STJ detectors, high count rate detection, and position resolution. Detectors were cooled to 0.35-0.4 K by means of a convenient 3He cryostat. The 5.9 and 6.5 keV x rays from 55Fe are separated by a detector specially designed for x-ray detection. The possible count rate of the series-junction detector estimated from the shaping-time constant applied in the measurements is high, e.g., over 104 counts per second. A series-junction detector equipped with a position sensing mechanism has shown a position resolution of about 35 μm in a sensing area with a radius of 1.1 mm. The position resolution of series junctions improves the energy resolution. A new type series-connected STJ detector is also proposed, i.e., the dispersed multitrap series-junction detector, for further improvement of detection efficiency and energy resolution.

Optical Addressing Electronic Tongue Based on Low Selective Photovoltaic Transducer with Nanoporous Silicon Layer

NASA Astrophysics Data System (ADS)

Litvinenko, S. V.; Bielobrov, D. O.; Lysenko, V.; Skryshevsky, V. A.

2016-08-01

The electronic tongue based on the array of low selective photovoltaic (PV) sensors and principal component analysis is proposed for detection of various alcohol solutions. A sensor array is created at the forming of p-n junction on silicon wafer with porous silicon layer on the opposite side. A dynamical set of sensors is formed due to the inhomogeneous distribution of the surface recombination rate at this porous silicon side. The sensitive to molecular adsorption photocurrent is induced at the scanning of this side by laser beam. Water, ethanol, iso-propanol, and their mixtures were selected for testing. It is shown that the use of the random dispersion of surface recombination rates on different spots of the rear side of p-n junction and principal component analysis of PV signals allows identifying mentioned liquid substances and their mixtures.

Photovoltaic module kit including connector assembly for non-penetrating array installation

DOEpatents

Botkin, Jonathan; Graves, Simon; Danning, Matt; Culligan, Matthew

2013-12-31

A PV module kit for non-penetrating rooftop installation, including a plurality of PV modules and a plurality of connectors. Each of the PV modules includes a PV laminate and a frame forming a mounting region assembled thereto. The connectors include a male connector having a male fastener extending from a head, and a female connector having a female fastener assempbled within a head. The heads are entirely formed of plastic. The kit provides a mounted array state including a junction at which the mounting regions of at least two of the PV modules are aligned and interconnected by engagement of the male connector with the female connector. The so-formed junction is substantially electrically insulated. The plurality of connectors can further include a spacer connector including a head forming a bore sized slidably receive the male fastener, with all of the connector heads being identical.

Photovoltaic module kit including connector assembly for non-penetrating array installation

DOEpatents

Botkin, Jonathan [El Cerrito, CA; Graves, Simon [Berkeley, CA; Danning, Matt [Oakland, CA; Culligan, Matthew [Berkeley, CA

2011-11-22

A PV module kit for non-penetrating rooftop installation, including a plurality of PV modules and a plurality of connectors. Each of the PV modules includes a PV laminate and a frame forming a mounting region assembled thereto. The connectors include a male connector having a male fastener extending from a head, and a female connector having a female fastener assembled within a head. The heads are entirely formed of plastic. The kit provides a mounted array state including a junction at which the mounting region of at least two of the PV modules are aligned and interconnected by engagement of the male connector with the female connector. The so-formed junction is substantially electrically insulated. The plurality of connectors can further include a spacer connector including a head forming a bore sized to slidably receive the male fastener, with all of the connector heads being identical.

Photovoltaic module kit including connector assembly for non-penetrating array installation

DOEpatents

Botkin, Jonathan; Graves, Simon; Danning, Matt; Culligan, Matthew

2012-10-23

A PV module kit for non-penetrating rooftop installation, including a plurality of PV modules and a plurality of connectors. Each of the PV modules includes a PV laminate and a frame forming a mounting region assembled thereto. The connectors include a male connector having a male fastener extending from a head, and a female connector having a female fastener assembled within a head. The heads are entirely formed of plastic. The kit provides a mounted array state including a junction at which the mounting region of at least two of the PV modules are aligned and interconnected by engagement of the male connector with the female connector. The so-formed junction is substantially electrically insulated. The plurality of connectors can further include a spacer connector including a head forming a bore sized to slidably receive the male fastener, with all of the connector heads being identical.

Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

PubMed Central

Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Park, Won-Kyu; Lee, Jaejin

2017-01-01

Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-type Ge emitter layer which is epitaxially grown by MOCVD using isobutylgermane. In situ epitaxial surface passivation is employed using an InGaP layer to avoid high surface recombination rates and Fermi level pinning. High quality n-ohmic contact is realized by protecting the top contact area during the nanopillar patterning. The short circuit current density and the power conversion efficiency of the Ge nanopillar solar cell are demonstrated to be improved up to 18 and 30%, respectively, compared to those of the Ge solar cell with a planar surface. PMID:28209964

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

NASA Technical Reports Server (NTRS)

Mcgrath, W. R.; Leduc, H. G.; Stern, J. A.

1990-01-01

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

On the correct implementation of Fermi-Dirac statistics and electron trapping in nonlinear electrostatic plane wave propagation in collisionless plasmas

NASA Astrophysics Data System (ADS)

Schamel, Hans; Eliasson, Bengt

2016-05-01

Quantum statistics and electron trapping have a decisive influence on the propagation characteristics of coherent stationary electrostatic waves. The description of these strictly nonlinear structures, which are of electron hole type and violate linear Vlasov theory due to the particle trapping at any excitation amplitude, is obtained by a correct reduction of the three-dimensional Fermi-Dirac distribution function to one dimension and by a proper incorporation of trapping. For small but finite amplitudes, the holes become of cnoidal wave type and the electron density is shown to be described by a ϕ ( x ) 1 / 2 rather than a ϕ ( x ) expansion, where ϕ ( x ) is the electrostatic potential. The general coefficients are presented for a degenerate plasma as well as the quantum statistical analogue to these steady state coherent structures, including the shape of ϕ ( x ) and the nonlinear dispersion relation, which describes their phase velocity.

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp; Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375; Schmieder, Kenneth J.

2016-05-14

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiatedmore » with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.« less

Position sensitive detection of nuclear radiation mediated by non equilibrium phonons at low temperatures

NASA Astrophysics Data System (ADS)

Pröbst, F.; Peterreins, Th.; Feilitzsch, F. v.; Kraus, H.

1990-03-01

Many experiments in nuclear and particle physics would benefit from the development of a device capable of detecting non-ionizing events with a low energy threshold. In this context, we report on experimental tests of a detector based on the registration of nonequilibrium phonons. The device is composed of a silicon single crystal (size: 20×10×3 mm 3) and of an array of superconducting tunnel junctions evaporated onto the surface of the crystal. The junctions serve as sensors for phonons created by absorption of nuclear radiation in the crystal. We show how pulse height analysis and the investigation of time differences between correlated pulses in different junctions can be used to obtain information about the point of absorption.

Naval Research Laboratory's programs in advanced indium phosphide solar cell development

NASA Technical Reports Server (NTRS)

Summers, Geoffrey P.

1996-01-01

The Naval Research Laboratory (NRL) has been involved in the development of solar cells for space applications since the 1960s. It quickly became apparent in this work that radiation damage caused to solar cells by electrons and protons trapped by the earth's magnetic field would seriously degrade the power output of photovoltaic arrays in extended missions. Techniques were therefore developed to harden the cells by shielding them with coverglass, etc. Ultimately, however, there is a limit to such approaches, which is determined by the radiation response of the semiconductor material employed. A desire for high efficiency and radiation resistance led to the development of alternative cell technologies such as GaAs, which has since become the technology of choice for many applications. InP cells are currently the most radiation resistant, high efficiency, planar cells known. NRL first sponsored InP solar cell technology in 1986, when Arizona State University was contracted to grow p/n cells by liquid phase epitaxy. NRL's interest in InP cells was generated by the results presented by Yamaguchi and his co-workers in the early 1980s on the remarkable radiation resistance of cells grown by diffusion of S into Zn doped p-type InP substrates. These cells also had beginning of life (BOL) efficiencies approximately 16%(AM0). Related to the radiation resistance of the cells was the fact that radiation-induced damage could be optically annealed by sunlight. Relatively large quantities of 1 x 2 cm(exp 2) diffused junction cells were made and were used on the MUSES-A and the EXOS-D satellites. These cells were also available in the U.S. through NIMCO, and were studied at NRL and elsewhere. Workers at NASA Lewis became involved in research in InP cells about the same time as NRL.

Miniaturized GC/MS instrumentation for in situ measurements: micro gas chromatography coupled with miniature quadrupole array and paul ion trap mass spectrometers

NASA Technical Reports Server (NTRS)

Holland, P.; Chutjian, A.; Darrach, M.; Orient, O.

2002-01-01

Miniaturized chemical instrumentation is needed for in situ measurements in planetary exploration and other spaceflight applications where factors such as reduction in payload requirements and enhanced robustness are important. In response to this need, we are 'continuing to develop miniaturized GC/MS instrumentation which combines chemical separations by gas chromatography (GC) with mass spectrometry (MS) to provide positive identification of chemical compounds in complex mixtures of gases, such as those found in the International Space Station's cabin atmosphere. Our design approach utilizes micro gas chromatography components coupled with either a miniature quadrupole mass spectrometer array (QMSA) or compact, high-resolution Paul ion trap.

Flexible and fragmentable tandem photosensitive nanocrystal skins

NASA Astrophysics Data System (ADS)

Akhavan, S.; Uran, C.; Bozok, B.; Gungor, K.; Kelestemur, Y.; Lesnyak, V.; Gaponik, N.; Eychmüller, A.; Demir, H. V.

2016-02-01

We proposed and demonstrated the first account of large-area, semi-transparent, tandem photosensitive nanocrystal skins (PNSs) constructed on flexible substrates operating on the principle of photogenerated potential buildup, which avoid the need for applying an external bias and circumvent the current-matching limitation between junctions. We successfully fabricated and operated the tandem PNSs composed of single monolayers of colloidal water-soluble CdTe and CdHgTe nanocrystals (NCs) in adjacent junctions on a Kapton polymer tape. Owing to the usage of a single NC layer in each junction, noise generation was significantly reduced while keeping the resulting PNS films considerably transparent. In each junction, photogenerated excitons are dissociated at the interface of the semi-transparent Al electrode and the NC layer, with holes migrating to the contact electrode and electrons trapped in the NCs. As a result, the tandem PNSs lead to an open-circuit photovoltage buildup equal to the sum of those of the two single junctions, exhibiting a total voltage buildup of 128.4 mV at an excitation intensity of 75.8 μW cm-2 at 350 nm. Furthermore, we showed that these flexible PNSs could be bent over 3.5 mm radius of curvature and cut out in arbitrary shapes without damaging the operation of individual parts and without introducing any significant loss in the total sensitivity. These findings indicate that the NC skins are promising as building blocks to make low-cost, flexible, large-area UV/visible sensing platforms with highly efficient full-spectrum conversion.We proposed and demonstrated the first account of large-area, semi-transparent, tandem photosensitive nanocrystal skins (PNSs) constructed on flexible substrates operating on the principle of photogenerated potential buildup, which avoid the need for applying an external bias and circumvent the current-matching limitation between junctions. We successfully fabricated and operated the tandem PNSs composed of single monolayers of colloidal water-soluble CdTe and CdHgTe nanocrystals (NCs) in adjacent junctions on a Kapton polymer tape. Owing to the usage of a single NC layer in each junction, noise generation was significantly reduced while keeping the resulting PNS films considerably transparent. In each junction, photogenerated excitons are dissociated at the interface of the semi-transparent Al electrode and the NC layer, with holes migrating to the contact electrode and electrons trapped in the NCs. As a result, the tandem PNSs lead to an open-circuit photovoltage buildup equal to the sum of those of the two single junctions, exhibiting a total voltage buildup of 128.4 mV at an excitation intensity of 75.8 μW cm-2 at 350 nm. Furthermore, we showed that these flexible PNSs could be bent over 3.5 mm radius of curvature and cut out in arbitrary shapes without damaging the operation of individual parts and without introducing any significant loss in the total sensitivity. These findings indicate that the NC skins are promising as building blocks to make low-cost, flexible, large-area UV/visible sensing platforms with highly efficient full-spectrum conversion. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05063d

Population density estimated from locations of individuals on a passive detector array

USGS Publications Warehouse

Efford, Murray G.; Dawson, Deanna K.; Borchers, David L.

2009-01-01

The density of a closed population of animals occupying stable home ranges may be estimated from detections of individuals on an array of detectors, using newly developed methods for spatially explicit capture–recapture. Likelihood-based methods provide estimates for data from multi-catch traps or from devices that record presence without restricting animal movement ("proximity" detectors such as camera traps and hair snags). As originally proposed, these methods require multiple sampling intervals. We show that equally precise and unbiased estimates may be obtained from a single sampling interval, using only the spatial pattern of detections. This considerably extends the range of possible applications, and we illustrate the potential by estimating density from simulated detections of bird vocalizations on a microphone array. Acoustic detection can be defined as occurring when received signal strength exceeds a threshold. We suggest detection models for binary acoustic data, and for continuous data comprising measurements of all signals above the threshold. While binary data are often sufficient for density estimation, modeling signal strength improves precision when the microphone array is small.

Fidelity by design: Yoctoreactor and binder trap enrichment for small-molecule DNA-encoded libraries and drug discovery.

PubMed

Blakskjaer, Peter; Heitner, Tara; Hansen, Nils Jakob Vest

2015-06-01

DNA-encoded small-molecule library (DEL) technology allows vast drug-like small molecule libraries to be efficiently synthesized in a combinatorial fashion and screened in a single tube method for binding, with an assay readout empowered by advances in next generation sequencing technology. This approach has increasingly been applied as a viable technology for the identification of small-molecule modulators to protein targets and as precursors to drugs in the past decade. Several strategies for producing and for screening DELs have been devised by both academic and industrial institutions. This review highlights some of the most significant and recent strategies along with important results. A special focus on the production of high fidelity DEL technologies with the ability to eliminate screening noise and false positives is included: using a DNA junction called the Yoctoreactor, building blocks (BBs) are spatially confined at the center of the junction facilitating both the chemical reaction between BBs and encoding of the synthetic route. A screening method, known as binder trap enrichment, permits DELs to be screened robustly in a homogeneous manner delivering clean data sets and potent hits for even the most challenging targets. Copyright © 2015 Elsevier Ltd. All rights reserved.

Scientific grade CCDs from EG & G Reticon

NASA Technical Reports Server (NTRS)

Cizdziel, Philip J.

1990-01-01

The design and performance of three scientific grade CCDs are summarized: a 1200 x 400 astronomical array of 27 x 27 sq micron pixels, a 512 x 512 scientific array of 27 x 27 sq micron pixels and a 404 x 64 VNIR array of 52 x 52 sq micron pixels. Each of the arrays is fabricated using a four phase, double poly, buried n-channel, multi-pinned phase CCD process. Performance data for each sensor is presented.

A low noise 230 GHz heterodyne receiver employing .25 sq micron area Nb/AlO(x)/Nb tunnel junctions

NASA Technical Reports Server (NTRS)

Kooi, Jacob W.; Chan, M.; Phillips, T. G.; Bumble, B.; Leduc, H. G.

1992-01-01

Recent results for a full height rectangular waveguide mixer with an integrated IF matching network are reported. Two 0.25 sq micron Nb/AlO(x)/Nb superconducting insulating superconducting (SIS) tunnel junctions with a current density of about 8500 A/sq cm and omega RC of about 2.5 at 230 GHz have been tested. Detailed measurements of the receiver noise have been made from 200-290 GHz for both junctions at 4.2 K. The lowest receiver noise temperatures were recorded at 239 GHz, measuring 48 K DSB at 4.2 K and 40 K DSB at 2.1 K. The 230 GHz receiver incorporates a one octave wide integrated low pass filter and matching network which transforms the pumped IF junction impedance to 50 ohms over a wide range of impedances.

Quantitative analysis of seismic trapped waves in the rupture zone of the Landers, 1992, California earthquake: Evidence for a shallow trapping structure

NASA Astrophysics Data System (ADS)

Peng, Z.; Ben-Zion, Y.; Michael, A. J.; Zhu, L.

2002-12-01

Waveform modeling of seismic fault zone (FZ) trapped waves has been claimed to provide a high resolution imaging of FZ structure at seismogenic depth. We analyze quantitatively a waveform data set generated by 238 Landers aftershocks recorded by a portable seismic array (Lee, 1999). The array consists of 33 three-component L-22 seismometers, 22 of which on a line crossing the surface rupture zone of the mainshock. A subset of 93 aftershocks were also recorded by the Southern California Seismic Network, while the other events were recorded only by the FZ array. We locate the latter subset of events with a "grid-search relocation method" using accurately picked P and S arrival times, a half-space velocity model, and back-azimuth adjustment to correct the effect of low velocity FZ material on phase arrivals. Next we determine the quality of FZ trapped wave generation from the ratio of trapped waves to S-wave energy for stations relatively close to and far from the FZ. Energy ratios exceeding 4, between 2 and 4, and less than 2, are assigned quality A, B, and C of trapped wave generation. We find that about 70% of nearby events with S-P time less than 2 sec, including many clearly off the fault, generate FZ trapped waves with quality A or B. This distribution is in marked contrast with previous claims that trapped waves at Landers are generated only by sources close to or inside the fault zone (Li et al., 1994, 2000). The existence of trapped waves due to sources outside the Landers rupture zone indicates that the generating structure is shallow, as demonstrated in recent 3D calculations of wave propagation in irregular FZ structures (Fohrmann et al., 2002). The time difference between the S arrivals and trapped wave group does not grow systematically with increasing source-receiver distance along the fault, in agreement with the above conclusion. The dispersion of trapped waves at Landers is rather weak, again suggesting a short propagation distance inside the low velocity FZ material. To put additional constraints on properties of the shallow trapping structure at Landers, we modeled FZ trapped waves with a genetic inversion algorithm (Michael and Ben-Zion, 2002) using the 2D analytical solution of Ben-Zion and Aki (1990) and Ben-Zion (1998) for a uniform FZ structure. The synthetic waveform modeling indicates an effective FZ waveguide with depth of about 3-5 km, width on the order of 200 m, shear velocity reduction relative to the host rock of about 40-50%, and S wave quality factor of about 30. The modeling also shows that the waveguide is not centered at the exposed fault trace (station C00), but at a distance of about 100 m east of C00. Shallow trapping structures with similar properties appear to characterize also the Karadere-Duzce branch of the north Anatolian fault (Ben-Zion et al., 2002) and the Parkfield segment of the San Andreas fault (Michael and Ben-Zion, 2002; Korneev et al., 2002).

Low-Power Optical Trapping of Nanoparticles and Proteins with Resonant Coaxial Nanoaperture Using 10 nm Gap.

PubMed

Yoo, Daehan; Gurunatha, Kargal L; Choi, Han-Kyu; Mohr, Daniel A; Ertsgaard, Christopher T; Gordon, Reuven; Oh, Sang-Hyun

2018-06-13

We present optical trapping with a 10 nm gap resonant coaxial nanoaperture in a gold film. Large arrays of 600 resonant plasmonic coaxial nanoaperture traps are produced on a single chip via atomic layer lithography with each aperture tuned to match a 785 nm laser source. We show that these single coaxial apertures can act as efficient nanotweezers with a sharp potential well, capable of trapping 30 nm polystyrene nanoparticles and streptavidin molecules with a laser power as low as 4.7 mW. Furthermore, the resonant coaxial nanoaperture enables real-time label-free detection of the trapping events via simple transmission measurements. Our fabrication technique is scalable and reproducible, since the critical nanogap dimension is defined by atomic layer deposition. Thus our platform shows significant potential to push the limit of optical trapping technologies.

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE PAGES

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; ...

2018-02-13

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture.

PubMed

Fang, Jia; Liu, Bofei; Zhao, Ying; Zhang, Xiaodan

2014-08-22

Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structure (LLTS) as a means of improving the light-harvesting capacity and performance of cells, achieving a 13.07% initial efficiency and greatly improved current output of a-Si:H single-junction solar cell based on this architecture. Given the unique transparency characteristics of thin-film solar cells, this proposed architecture has great potential for integration into the windows of buildings, microelectronics and other applications requiring transparent components.

3D Nanochannel Array Platform for High-throughput Cell Manipulation and Nano-electroporation

NASA Astrophysics Data System (ADS)

Chang, Lingqian

Electroporation is one of the most common non-viral methods for gene delivery. Recent progress in gene therapy has offered special opportunities to electroporation for in vitro and in vivo applications. However, conventional bulk electroporation (BEP) inevitably causes serious cell damage and stochastic transfection between cells. Microfluidic electroporation (MEP) has been claimed to provide benign single cell transfection for the last decade. Nevertheless, the intracellular transport in both MEP and BEP systems is highly diffusion-dominant, which prevents precise dose control and high uniformity. In this Ph.D. research, we developed a 3D nanochannel-electroporation (3D NEP) platform for mass cell transfection. A silicon-based nanochannel array (3D NEP) chip was designed and fabricated for cell manipulation and electroporation. The chip, designed as Z-directional microchannel - nanochannel array, was fabricated by clean room techniques including projection photolithography and deep reactive-ion etching (DRIE). The fabricated 3D NEP chip is capable of handling 40,000 cells per 1 cm2, up to 1 million per wafer (100 mm diameter). High-throughput cell manipulation technologies were investigated for precise alignment of individual cells to the nanochannel array, a key step for NEP to achieve dose control. We developed three techniques for cell trapping in this work. (1) Magnetic tweezers (MTs) were integrated on the chip to remotely control cells under a programmed magnetic field. (2) A positive dielectrophoresis (pDEP) power system was built as an alternative to trap cells onto the nanochannel array using DEP force. (3) A novel yet simple 'dipping-trap' method was used to rapidly trap cells onto a nanochannel array, aligned by a micro-cap array pattern on the 3D NEP chip, which eventually offered 70 - 90 % trapping efficiency and 90 % specificity. 3D NEP platforms were assembled for cell transfection based on the Si-based nanochannel array chip and cell manipulation techniques. Cells were patterned on the nanochannel array and collectively were electroporated in parallel, injected with cargo in Z-direction. Controlling the dose was demonstrated with the external pulse durations at high-throughput. The 'electrophoretic'- expedited delivery of large molecular weight plasmids were demonstrated with large numbers of primary cells simultaneously, which cannot be achieved in BEP and MEP. Two clinically valuable case studies were performed with our 3D NEP for living cell sensing / interrogation. (1) In the case of in vitro transfection of primary cardiomyocytes, we studied the dose-effects of miR-29 on mitochondrial changes and the suppression of the Mcl-1 gene in adult mouse cardiomyocytes by precisely controlling the miR-29 dose injected. (2) Glioma stem cells (GSCs), a type of cell hypothesized to be highly aggressive and to lead to the relapses of gliobastoma in human brain, was studied at single cell resolution on 3D NEP platform. The developed 3D NEP system moves towards clinically oriented and user-friendly tools for life science applications. The batch-treated cells with controlled dosage delivery provide a useful tool for single cell analysis. The pioneering experiments in this work have demonstrated the 3D NEP for the applications of cell reprogramming, adoptive immunotherapy, in vitro cardiomyocytes transfection and glioma stem cells study.

Polyacetylene, (CH){sub x}, as an Emerging Material for Solar Cell Applications. Final Technical Report, March 19, 1979 - March 18, 1980

DOE R&D Accomplishments Database

Heeger, A. J.; MacDiarmid, A. G.

1980-06-05

Despite great theoretical and technological interest in polyacetylene, (CH){sub x}, the basic features of its band structure have not been unambiguously resolved. Since photoconductivity and optical absorption data have frequently been used to infer information on the band structure of semiconductors, such measurements were carried out on (CH){sub x}. The main results of an extensive study of the photoconductivity (..delta.. sigma{sub ph}) and absorption coefficient (..cap alpha..) in (CH){sub x} are presented. The absence of photoconductivity in cis-(CH){sub x}, despite the similarity in optical properties indicates that ..delta.. sigma/sub ph/ in trans-(CH){sub x} is induced by isomerization. It is found that isomerization generates states deep inside the gap that act as safe traps for minority carriers and thereby enhance the photoconductivity. Compensation of trans-(CH){sub x} with ammonia appears to decrease the number of safe traps, whereas acceptor doping increases their number. Thus, chemical doping can be used to control the photoconductive response. The energy of safe traps inside the gap is independent of the process used to generate them; indicative of an intrinsic localized defect level in trans-(CH){sub x}. A coherent picture based on the soliton model can explain these results, including the safe trapping.

Optimization of multifunnel traps for emerald ash borer (Coleoptera: Buprestidae): influence of size, trap coating, and color.

PubMed

Francese, Joseph A; Rietz, Michael L; Mastro, Victor C

2013-12-01

Field assays were conducted in southeastern and south-central Michigan in 2011 and 2012 to optimize green and purple multifunnel (Lindgren funnel) traps for use as a survey tool for the emerald ash borer, Agrilus planipennis Fairmaire. Larger sized (12- and 16-unit) multifunnel traps caught more beetles than their smaller-sized (4- and 8-unit) counterparts. Green traps coated with untinted (white) fluon caught almost four times as many adult A. planipennis as Rain-X and tinted (green) fluon-coated traps and almost 33 times more beetles than untreated control traps. Purple multifunnel traps generally caught much lower numbers of A. planipennis adults than green traps, and trap catch on them was not affected by differences in the type of coating applied. However, trap coating was necessary as untreated control purple traps caught significantly less beetles than traps treated with Rain-X and untinted or tinted (purple) fluon. Proportions of male beetles captured were generally much higher on green traps than on purple traps, but sex ratios were not affected by trap coating. In 2012, a new shade of purple plastic, based on a better color match to an attractive purple paint than the previously used purple, was used for trapping assays. When multifunnel traps were treated with fluon, green traps caught more A. planipennis adults than both shades of purple and a prism trap that was manufactured based on the same color match. Trap catch was not affected by diluting the fluon concentration applied to traps to 50% (1:1 mixture in water). At 10%, trap catch was significantly lowered.

Experiments with d-wave Superconductors

NASA Astrophysics Data System (ADS)

Mannhart, J.; Hilgenkamp, H.; Hammerl, G.; Schneider, C. W.

2003-10-01

The predominant dx2-y2-wave pairing-symmetry of most high-Tc, superconductors provides the opportunity to fabricate Josephson junction circuits in which part of the junctions are biased by a phase difference of the superconducting order parameter of π. To explore the road to such π-electronics, we have fabricated and studied all-high-Tc dc superconducting quantum interference devices (dc SQUIDs) realized with thin film technology, of which the Josephson junctions consist of one standard junction and one junction with a π-phase shift. These π-SQUIDs provide clear evidence of the dx2-y2-wave symmetry of the order parameter, the amount of complex admixtures of other symmetry components being undetectably small. This seems to contradict other experiments, the results of which have been presented as evidence for an s-wave order parameter or for complex admixtures. Possible solutions to resolve this apparent contradiction are presented. In particular it is pointed out that even in the bulk of a superconductor the order parameter symmetry (the admixture of various symmetry components) may be spatially dependent.

Comparison of X-ray Radiation Process in Single and Nested Wire Array Implosions

NASA Astrophysics Data System (ADS)

Li, Z. H.; Xu, Z. P.; Yang, J. L.; Xu, R. K.; Guo, C.; Grabovsky, E. V.; Oleynic, G. M.; Smirnov, V. P.

2006-01-01

In order to understanding the difference between tungsten single-wire-array and tungsten nested-wire-array Z-pinches, we have measured the x-ray power, the temporal-spatial distributions of x-ray radiation from each of the two loads. The measurements were performed with 0.1mm spatial and 1 ns temporal resolutions at 2.5- and 3.5-MA currents. The experimental conditions, including wire material, number of wires, wire-array length, electrode design, and implosion time, remained unchanged from shot to shot. Analysis of the radiation power profiles suggests that the nested-wire-array radiate slightly less x-ray energy in relatively shorter time interval than the single wire-array, leading to a much greater x-ray power in nested-wire-array implosion. The temporal-spatial distributions of x-ray power show that in both cases, plasmas formed by wire-array ablation radiate not simultaneously along load axis. For nested-wire-array Z-pinch, plasmas near the anode begin to radiate in 2ns later than that near the cathode. As a contrast, the temporal divergence of radiation among different plasma zones of single-wire-array Z-pinch along Z-axis is more than 6ns. Measurements of the x-ray emissions from small segments of pinch (2mm length along axis) indicate that local radiation power profiles almost do not vary for the two loads. Photographs taken by X-ray framing camera give a same description about the radiation process of pinch. One may expect that, as a result of this study, if the single-wire-array can be redesigned so ingeniously that the x-rays are emitted at the same time all over the pinch zone, the radiation power of single wire array Z-pinch may be much greater than what have been achieved.

A new method to synthesize complicated multi-branched carbon nanotubes with controlled architecture and composition.

PubMed

Wei, Dacheng; Liu, Yunqi; Cao, Lingchao; Fu, Lei; Li, Xianglong; Wang, Yu; Yu, Gui; Zhu, Daoben

2006-02-01

Here we develop a simple method by using flow fluctuation to synthesize arrays of multi-branched carbon nanotubes (CNTs) that are far more complex than those previously reported. The architectures and compositions can be well controlled, thus avoiding any template or additive. A branching mechanism of fluctuation-promoted coalescence of catalyst particles is proposed. This finding will provide a hopeful approach to the goal of CNT-based integrated circuits and be valuable for applying branched junctions in nanoelectronics and producing branched junctions of other materials.

Exploration of strategies for implementation of screen-printed mercuric iodide converters in direct detection AMFPIs for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao

2017-03-01

Digital breast tomosynthesis (DBT) has become an increasingly important tool in the diagnosis of breast disease. For those DBT imaging systems based on active matrix, flat-panel imager (AMFPI) arrays, the incident radiation is detected directly or indirectly by means of an a-Se or CsI:Tl x-ray converter, respectively. While all AMFPI DBT devices provide clinically useful volumetric information, their performance is limited by the relatively modest average signal generated per interacting X ray by present converters compared to the electronic additive noise of the system. To address this constraint, we are pursuing the development of a screen-printed form of mercuric iodide (SP HgI2) which has demonstrated considerably higher sensitivities (i.e., larger average signal per interacting X ray) than those of conventional a-Se and CsI:Tl converters, as well as impressive DQE and MTF performance under mammographic irradiation conditions. A converter offering such enhanced sensitivity would greatly improve signal-to-noise performance and facilitate quantum-limited imaging down to significantly lower exposures than present AMFPI DBT systems. However, before this novel converter material can be implemented practically, challenges associated with SP HgI2 must be addressed. Most significantly, high levels of charge trapping (which lead to image lag as well as fall-off in DQE at higher exposures) need to be reduced - while improving the uniformity in pixel-to-pixel signal response as well as maintaining low dark current and otherwise favorable DQE performance. In this paper, a pair of novel strategies for overcoming the challenge of charge trapping in SP HgI2 converters are described, and initial results from empirical and calculational studies of these strategies are reported.

Charge trapping and current-conduction mechanisms of metal-oxide-semiconductor capacitors with La xTa y dual-doped HfON dielectrics

NASA Astrophysics Data System (ADS)

Cheng, Chin-Lung; Horng, Jeng-Haur; Chang-Liao, Kuei-Shu; Jeng, Jin-Tsong; Tsai, Hung-Yang

2010-10-01

Charge trapping and related current-conduction mechanisms in metal-oxide-semiconductor (MOS) capacitors with La xTa y dual-doped HfON dielectrics have been investigated under various post-deposition annealing (PDA). The results indicate that by La xTa y incorporation into HfON dielectric enhances electrical and reliability characteristics, including equivalent-oxide-thickness (EOT), stress-induced leakage current (SILC), and trap energy level. The mechanisms related to larger positive charge generation in the gate dielectric bulk can be attributed to La xTa y dual-doped HfON dielectric. The results of C- V measurement indicate that more negative charges are induced with increasing PDA temperature for the La xTa y dual-doped HfON dielectric. The charge current transport mechanisms through various dielectrics have been analyzed with current-voltage ( I- V) measurements under various temperatures. The current-conduction mechanisms of HfLaTaON dielectric at the low-, medium-, and high-electrical fields were dominated by Schottky emission (SE), Frenkel-Poole emission (F-P), and Fowler-Nordheim (F-N), respectively. A low trap energy level ( Φ trap) involved in Frenkel-Pool conduction in an HfLaTaON dielectric was estimated to be around 0.142 eV. Although a larger amount of positive charges generated in the HfLaTaON dielectric was obtained, the Φ trap of these positive charges in the HfLaTaON dielectric are shallow compared with HfON dielectric.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Electro-optical SLS devices for operating at new wavelength ranges

DOEpatents

Osbourn, Gordon C.

1986-01-01

An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.

Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yakushiji, K.; Kitagawa, E.; Ochiai, T.; Kubota, H.; Shimomura, N.; Ito, J.; Yoda, H.; Yuasa, S.

2018-05-01

We fabricated magnetic tunnel junctions with a 3d-transition material(X)-doped MgO (Mg-X-O) barrier, and evaluated the effect of the doping on magnetoresistance (MR) and microstructure. Among the variations of X (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn), X = Fe and Mn showed a high MR ratio of more than 100%, even at a low resistance-area product of 3 Ωμm2. The microstructure analysis revealed that (001) textured orientation formed for X = Fe and Mn despite substantial doping (about 10 at%). The elemental mappings indicated that Fe atoms in the Mg-Fe-O barrier were segregated at the interfaces, while Mn atoms were evenly involved in the Mg-Mn-O barrier. This suggests that MgO has high adaptability for Fe and Mn dopants in terms of high MR ratio.

Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.

PubMed

Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W

2014-08-15

We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.

Single-molecule optical-trapping measurements with DNA anchored to an array of gold nanoposts.

PubMed

Paik, D Hern; Perkins, Thomas T

2012-01-01

Gold-thiol chemistry is one of the most successful chemistries for conjugating biomolecules to surfaces, but such chemistry has not been exploited in optical-trapping experiments because of laser-induced ablation of gold. In this work, we describe a method to combine these two separate technologies without undue heating using DNA anchored to gold nanostructures (r = 50-250 nm; h ≈ 20 nm). Moreover, we demonstrate a quantitative and mechanically robust (>100 pN) optical-trapping assay. By using three dithiol phosphoramidites (DTPAs) incorporated into a polymerase chain reaction (PCR) primer, the gold-DNA bond remained stable in the presence of excess thiolated compounds. This chemical robustness allowed us to reduce nonspecific sticking by passivating the unreacted gold with methoxy-(polyethylene glycol)-thiol (mPEG-SH). Overall, this surface conjugation of biomolecules onto an ordered array of gold nanostructures by chemically and mechanically robust bonds provides a unique way to carry out spatially controlled, repeatable measurements of single molecules.

Efficient light trapping in silicon inclined nanohole arrays for photovoltaic applications

NASA Astrophysics Data System (ADS)

Deng, Can; Tan, Xinyu; Jiang, Lihua; Tu, Yiteng; Ye, Mao; Yi, Yasha

2018-01-01

Structural design with high light absorption is the key challenge for thin film solar cells because of its poor absorption. In this paper, the light-trapping performance of silicon inclined nanohole arrays is systematically studied. The finite difference time domain method is used to calculate the optical absorption of different inclination angles in different periods and diameters. The results indicate that the inclined nanoholes with inclination angles between 5° and 45° demonstrate greater light-trapping ability than their counterparts of the vertical nanoholes, and they also show that by choosing the optimal parameters for the inclined nanoholes, a 31.2 mA/cm2 short circuit photocurrent density could be achieved, which is 10.25% higher than the best vertical nanohole system and 105.26% higher than bare silicon with a thickness of 2330 nm. The design principle proposed in this work gives a guideline for choosing reasonable parameters in the application of solar cells.

Integrating a high-force optical trap with gold nanoposts and a robust gold-DNA bond.

PubMed

Paik, D Hern; Seol, Yeonee; Halsey, Wayne A; Perkins, Thomas T

2009-08-01

Gold-thiol chemistry is widely used in nanotechnology but has not been exploited in optical-trapping experiments due to laser-induced ablation of gold. We circumvented this problem by using an array of gold nanoposts (r = 50-250 nm, h approximately 20 nm) that allowed for quantitative optical-trapping assays without direct irradiation of the gold. DNA was covalently attached to the gold via dithiol phosphoramidite (DTPA). By using three DTPAs, the gold-DNA bond was not cleaved in the presence of excess thiolated compounds. This chemical robustness allowed us to reduce nonspecific sticking by passivating the unreacted gold with methoxy-(polyethylene glycol)-thiol. We routinely achieved single beads anchored to the nanoposts by single DNA molecules. We measured DNA's elasticity and its overstretching transition, demonstrating moderate- and high-force optical-trapping assays using gold-thiol chemistry. Force spectroscopy measurements were consistent with the rupture of the strepavidin-biotin bond between the bead and the DNA. This implied that the DNA remained anchored to the surface due to the strong gold-thiol bond. Consistent with this conclusion, we repeatedly reattached the trapped bead to the same individual DNA molecule. Thus, surface conjugation of biomolecules onto an array of gold nanostructures by chemically and mechanically robust bonds provides a unique way to carry out spatially controlled, repeatable measurements of single molecules.

PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction

PubMed Central

Cheng, Baochang; Zhao, Jie; Xiao, Li; Cai, Qiangsheng; Guo, Rui; Xiao, Yanhe; Lei, Shuijin

2015-01-01

Resistive switching (RS) devices are commonly believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, polymethylmethacrylate (PMMA) interlayer was introduced at the heterointerface of p-CuSCN hollow nanopyramid arrays and n-ZnO nanorod arrays, resulting in a typical bipolar RS behavior. We propose the mechanism of nanostructure trap-induced space charge polarization modulated by PMMA interlayer. At low reverse bias, PMMA insulator can block charges through the heterointerface, and and trapped states are respectively created on both sides of PMMA, resulting in a high resistance state (HRS) due to wider depletion region. At high reverse bias, however, electrons and holes can cross PMMA interlayer by Fowler-Nordeim tunneling due to a massive tilt of energy band, and then inject into the traps of ZnO and CuSCN, respectively. and trapped states are created, resulting in the formation of degenerate semiconductors on both sides of PMMA. Therefore, quantum tunneling and space charge polarization lead to a low resistance state (LRS). At relatively high forward bias, subsequently, the trapped states of and are recreated due to the opposite injection of charges, resulting in a recovery of HRS. The introduction of insulating interlayer at heterointerface, point a way to develop next-generation nonvolatile memories. PMID:26648249

Fabrication of superconductor-ferromagnet-insulator-superconductor Josephson junctions with critical current uniformity applicable to integrated circuits

NASA Astrophysics Data System (ADS)

Ito, Hiroshi; Taniguchi, Soya; Ishikawa, Kouta; Akaike, Hiroyuki; Fujimaki, Akira

2017-03-01

Nb Josephson junctions (JJs) were fabricated with a Pd89Ni11 ferromagnetic interlayer and an AlO x tunnel barrier layer for use in large-scale superconducting integrated circuits. The junctions had a small critical current (I c) spread, where the standard deviation 1σ was less than 2% at 4.2 K for junctions with the same designed size. It was observed that the electrical behavior of the junctions could be controlled by manipulating the film thickness of the PdNi interlayer. The junctions behaved as a π-JJ for thicknesses of 9 and 11 nm, showing 1σ in the I c spread of 1.2% for 9 nm.

Terra Flexible Blanket Solar Array Deployment, On-Orbit Performance and Future Applications

NASA Technical Reports Server (NTRS)

Kurland, Richard; Schurig, Hans; Rosenfeld, Mark; Herriage, Michael; Gaddy, Edward; Keys, Denney; Faust, Carl; Andiario, William; Kurtz, Michelle; Moyer, Eric;

Cryogen-free cryostat for large-scale arrays of superconducting tunnel junction ion detectors in time-of-flight mass spectrometry

NASA Astrophysics Data System (ADS)

Kushino, A.; Ohkubo, M.; Chen, Y. E.; Ukibe, M.; Kasai, S.; Fujioka, K.

2006-04-01

Nb-based superconducting tunnel junction (STJ) detectors have a fast time resolution of a few 100 ns and high operating temperature of 0.3 K. These advantages expand their applicable fields to time-of-flight mass spectrometry (TOF-MS). In order to enlarge effective detection area, we have built arrays based on hundreds of large STJ elements. To realize the fast readout and no-cross talk, coaxial cables made of low-thermal conductivity materials were investigated. From results of thermal conduction measurements, we chose thin coaxial cables with a diameter of 0.33 mm, consisting of CuNi center/outer conductors and Teflon insulator for the wiring between 0.3 K- 3He pot of the sorption pump and 3 K-2nd stage of GM cooler. Even after the installation of coaxial cables and a cold snout to the cryogen-free cryostat, we could keep arrays at 0.3 K for about a week, and reduction of the holding time at 0.3 K and temperature rise at 3He pot due to the installation were small, ˜0.5 day and 10 mK, respectively.

Hydrogen isotope trapping in Al-Cu binary alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chao, Paul; Karnesky, Richard A.

In this study, the trapping mechanisms for hydrogen isotopes in Al–X Cu (0.0 at. % < X < 3.5 at. %) alloys were investigated using thermal desorption spectroscopy (TDS), electrical conductivity, and differential scanning calorimetry. Constant heating rate TDS was used to determine microstructural trap energies and occupancies. In addition to the trapping states in pure Al reported in the literature (interstitial lattice sites, dislocations, and vacancies), a trap site due to Al–Cu intermetallic precipitates is observed. The binding energy of this precipitate trap is (18 ± 3) kJ•mol –1 (0.19 ± 0.03 eV). Typical occupancy of this trap ismore » high; for Al–2.6 at. % Cu (a Cu composition comparable to that in AA2219) charged at 200 °C with 130 MPa D 2 for 68 days, there is ca. there is 3.15×10 –7 mol D bound to the precipitate trap per mol of Al, accounting for a third of the D in the charged sample.« less

Hydrogen isotope trapping in Al-Cu binary alloys

DOE PAGES

Chao, Paul; Karnesky, Richard A.

2016-01-01

In this study, the trapping mechanisms for hydrogen isotopes in Al–X Cu (0.0 at. % < X < 3.5 at. %) alloys were investigated using thermal desorption spectroscopy (TDS), electrical conductivity, and differential scanning calorimetry. Constant heating rate TDS was used to determine microstructural trap energies and occupancies. In addition to the trapping states in pure Al reported in the literature (interstitial lattice sites, dislocations, and vacancies), a trap site due to Al–Cu intermetallic precipitates is observed. The binding energy of this precipitate trap is (18 ± 3) kJ•mol –1 (0.19 ± 0.03 eV). Typical occupancy of this trap ismore » high; for Al–2.6 at. % Cu (a Cu composition comparable to that in AA2219) charged at 200 °C with 130 MPa D 2 for 68 days, there is ca. there is 3.15×10 –7 mol D bound to the precipitate trap per mol of Al, accounting for a third of the D in the charged sample.« less

Estimating black bear density using DNA data from hair snares

USGS Publications Warehouse

Gardner, B.; Royle, J. Andrew; Wegan, M.T.; Rainbolt, R.E.; Curtis, P.D.

2010-01-01

DNA-based mark-recapture has become a methodological cornerstone of research focused on bear species. The objective of such studies is often to estimate population size; however, doing so is frequently complicated by movement of individual bears. Movement affects the probability of detection and the assumption of closure of the population required in most models. To mitigate the bias caused by movement of individuals, population size and density estimates are often adjusted using ad hoc methods, including buffering the minimum polygon of the trapping array. We used a hierarchical, spatial capturerecapture model that contains explicit components for the spatial-point process that governs the distribution of individuals and their exposure to (via movement), and detection by, traps. We modeled detection probability as a function of each individual's distance to the trap and an indicator variable for previous capture to account for possible behavioral responses. We applied our model to a 2006 hair-snare study of a black bear (Ursus americanus) population in northern New York, USA. Based on the microsatellite marker analysis of collected hair samples, 47 individuals were identified. We estimated mean density at 0.20 bears/km2. A positive estimate of the indicator variable suggests that bears are attracted to baited sites; therefore, including a trap-dependence covariate is important when using bait to attract individuals. Bayesian analysis of the model was implemented in WinBUGS, and we provide the model specification. The model can be applied to any spatially organized trapping array (hair snares, camera traps, mist nests, etc.) to estimate density and can also account for heterogeneity and covariate information at the trap or individual level. ?? The Wildlife Society.

High-Resolution Ultrasonic Imaging of Dento-Periodontal Tissues Using a Multi-Element Phased Array System.

PubMed

Nguyen, Kim-Cuong T; Le, Lawrence H; Kaipatur, Neelambar R; Zheng, Rui; Lou, Edmond H; Major, Paul W

2016-10-01

Intraoral ultrasonography uses high-frequency mechanical waves to study dento-periodontium. Besides the advantages of portability and cost-effectiveness, ultrasound technique has no ionizing radiation. Previous studies employed a single transducer or an array of transducer elements, and focused on enamel thickness and distance measurement. This study used a phased array system with a 128-element array transducer to image dento-periodontal tissues. We studied two porcine lower incisors from a 6-month-old piglet using 20-MHz ultrasound. The high-resolution ultrasonographs clearly showed the cross-sectional morphological images of the hard and soft tissues. The investigation used an integration of waveform analysis, travel-time calculation, and wavefield simulation to reveal the nature of the ultrasound data, which makes the study novel. With the assistance of time-distance radio-frequency records, we robustly justified the enamel-dentin interface, dentin-pulp interface, and the cemento-enamel junction. The alveolar crest level, the location of cemento-enamel junction, and the thickness of alveolar crest were measured from the images and compared favorably with those from the cone beam computed tomography with less than 10% difference. This preliminary and fundamental study has reinforced the conclusions from previous studies, that ultrasonography has great potential to become a non-invasive diagnostic imaging tool for quantitative assessment of periodontal structures and better delivery of oral care.

Radiation detection measurements with a new ``Buried Junction'' silicon avalanche photodiode

NASA Astrophysics Data System (ADS)

Lecomte, R.; Pepin, C.; Rouleau, D.; Dautet, H.; McIntyre, R. J.; McSween, D.; Webb, P.

1999-02-01

An improved version of a recently developed "Buried Junction" avalanche photodiode (APD), designed for use with scintillators, is described and characterized. This device, also called the "Reverse APD", is designed to have a wide depletion layer and thus low capacitance, but to have high gain only for e-h pairs generated within the first few microns of the depletion layer. Thus it has high gain for light from scintillators emitting in the 400-600 nm range, with relatively low dark current noise and it is relatively insensitive to minimum ionizing particles (MIPs). An additional feature is that the metallurgical junction is at the back of the wafer, leaving the front surface free to be coupled to a scintillator without fear of junction contamination. The modifications made in this device, as compared with the earlier diode, have resulted in a lower excess noise factor, lower dark current, and much-reduced trapping. The electrical and optical characteristics of this device are described and measurements of energy and timing resolution of this device with several scintillators (BGO, LSO and GSO) of potential interest in high-energy physics and PET imaging systems are presented.

3D Band Diagram and Photoexcitation of 2D-3D Semiconductor Heterojunctions.

PubMed

Li, Bo; Shi, Gang; Lei, Sidong; He, Yongmin; Gao, Weilu; Gong, Yongji; Ye, Gonglan; Zhou, Wu; Keyshar, Kunttal; Hao, Ji; Dong, Pei; Ge, Liehui; Lou, Jun; Kono, Junichiro; Vajtai, Robert; Ajayan, Pulickel M

2015-09-09

The emergence of a rich variety of two-dimensional (2D) layered semiconductor materials has enabled the creation of atomically thin heterojunction devices. Junctions between atomically thin 2D layers and 3D bulk semiconductors can lead to junctions that are fundamentally electronically different from the covalently bonded conventional semiconductor junctions. Here we propose a new 3D band diagram for the heterojunction formed between n-type monolayer MoS2 and p-type Si, in which the conduction and valence band-edges of the MoS2 monolayer are drawn for both stacked and in-plane directions. This new band diagram helps visualize the flow of charge carriers inside the device in a 3D manner. Our detailed wavelength-dependent photocurrent measurements fully support the diagrams and unambiguously show that the band alignment is type I for this 2D-3D heterojunction. Photogenerated electron-hole pairs in the atomically thin monolayer are separated and driven by an external bias and control the "on/off" states of the junction photodetector device. Two photoresponse regimes with fast and slow relaxation are also revealed in time-resolved photocurrent measurements, suggesting the important role played by charge trap states.

Current-voltage characteristics of manganite-titanite perovskite junctions.

PubMed

Ifland, Benedikt; Peretzki, Patrick; Kressdorf, Birte; Saring, Philipp; Kelling, Andreas; Seibt, Michael; Jooss, Christian

2015-01-01

After a general introduction into the Shockley theory of current voltage (J-V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite-titanate p-n heterojunctions made of n-doped SrTi1- y Nb y O3, y = 0.002 and p-doped Pr1- x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross plane lamella of the junction. In the J-V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER) effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron-polaron hole-polaron pair generation and separation at the interface.

Long Josephson tunnel junctions with doubly connected electrodes

NASA Astrophysics Data System (ADS)

Monaco, R.; Mygind, J.; Koshelets, V. P.

2012-03-01

In order to mimic the phase changes in the primordial Big Bang, several cosmological solid-state experiments have been conceived, during the last decade, to investigate the spontaneous symmetry breaking in superconductors and superfluids cooled through their transition temperature. In one of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy. The theoretical findings are supported by measurements on a number of samples having different geometrical configuration. The experiments demonstrate that a very large signal-to-noise ratio can be achieved in the flux quanta detection.

Stochastic resonance-enhanced laser-based particle detector.

PubMed

Dutta, A; Werner, C

2009-01-01

This paper presents a Laser-based particle detector whose response was enhanced by modulating the Laser diode with a white-noise generator. A Laser sheet was generated to cast a shadow of the object on a 200 dots per inch, 512 x 1 pixels linear sensor array. The Laser diode was modulated with a white-noise generator to achieve stochastic resonance. The white-noise generator essentially amplified the wide-bandwidth (several hundred MHz) noise produced by a reverse-biased zener diode operating in junction-breakdown mode. The gain in the amplifier in the white-noise generator was set such that the Receiver Operating Characteristics plot provided the best discriminability. A monofiber 40 AWG (approximately 80 microm) wire was detected with approximately 88% True Positive rate and approximately 19% False Positive rate in presence of white-noise modulation and with approximately 71% True Positive rate and approximately 15% False Positive rate in absence of white-noise modulation.

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-08-01

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

Fabrication of nanostructured CIGS solar cells

NASA Astrophysics Data System (ADS)

Zhang, Hongwang; Wang, Fang; Parry, James; Perera, Samanthe; Zeng, Hao

2012-02-01

We present the work on Cu(In,Ga)(Se,S)2 based nanostructured solar cells based on nanowire arrays. CIGS as the light absorber for thin-film solar cells has been widely studied recently, due to its high absorption coefficient, long-term stability, and low-cost of fabrication. Recently, solution phase processed CIGS thin film solar cells attracted great attention due to their extremely low fabrication cost. However, the performance is lower than vacuum based thin films possibly due to higher density of defects and lower carrier mobility. On the other hand, one dimensional ordered nanostructures such as nanowires and nanorods can be used to make redial junction solar cells, where the orthogonality between light absorption and charge carrier separation can lead to enhanced PV performance. Since the charge carriers only need to traverse a short distance in the radial direction before they are separated at the heterojunction interface, the radial junction scheme can be more defect tolerant than their planar junction scheme. In this work, a wide band gap nanowire or nanotube array such as TiO2 is used as a scaffold where CIGS is conformally coated using solution phase to obtain a radial heterojunction solar cell. Their performance is compared that of the planar thin film solar cells fabricated with the same materials.

Magnetic field mapping of the UCNTau magneto-gravitational trap: design study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Libersky, Matthew Murray

2014-09-04

The beta decay lifetime of the free neutron is an important input to the Standard Model of particle physics, but values measured using different methods have exhibited substantial disagreement. The UCN r experiment in development at Los Alamos National Laboratory (LANL) plans to explore better methods of measuring the neutron lifetime using ultracold neutrons (UCNs). In this experiment, UCNs are confined in a magneto-gravitational trap formed by a curved, asymmetric Halbach array placed inside a vacuum vessel and surrounded by holding field coils. If any defects present in the Halbach array are sufficient to reduce the local field near themore » surface below that needed to repel the desired energy level UCNs, loss by material interaction can occur at a rate similar to the loss by beta decay. A map of the magnetic field near the surface of the array is necessary to identify any such defects, but the array's curved geometry and placement in a vacuum vessel make conventional field mapping methods difficult. A system consisting of computer vision-based tracking and a rover holding a Hall probe has been designed to map the field near the surface of the array, and construction of an initial prototype has begun at LANL. The design of the system and initial results will be described here.« less

Herpetological Monitoring Using a Pitfall Trapping Design in Southern California

USGS Publications Warehouse

Fisher, Robert; Stokes, Drew; Rochester, Carlton; Brehme, Cheryl; Hathaway, Stacie; Case, Ted

2008-01-01

The steps necessary to conduct a pitfall trapping survey for small terrestrial vertebrates are presented. Descriptions of the materials needed and the methods to build trapping equipment from raw materials are discussed. Recommended data collection techniques are given along with suggested data fields. Animal specimen processing procedures, including toe- and scale-clipping, are described for lizards, snakes, frogs, and salamanders. Methods are presented for conducting vegetation surveys that can be used to classify the environment associated with each pitfall trap array. Techniques for data storage and presentation are given based on commonly use computer applications. As with any study, much consideration should be given to the study design and methods before beginning any data collection effort.

Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

DOE PAGES

Gao, Xujiao; Huang, Andy; Kerr, Bert

2017-10-25

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carriermore » recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.« less

Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Xujiao; Huang, Andy; Kerr, Bert

In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carriermore » recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.« less

An efficient, self-orienting, vertical-array, sand trap

NASA Astrophysics Data System (ADS)

Hilton, Michael; Nickling, Bill; Wakes, Sarah; Sherman, Douglas; Konlechner, Teresa; Jermy, Mark; Geoghegan, Patrick

2017-04-01

There remains a need for an efficient, low-cost, portable, passive sand trap, which can provide estimates of vertical sand flux over topography and within vegetation and which self-orients into the wind. We present a design for a stacked vertical trap that has been modelled (computational fluid dynamics, CFD) and evaluated in the field and in the wind tunnel. The 'swinging' trap orients to within 10° of the flow in the wind tunnel at 8 m s-1, and more rapidly in the field, where natural variability in wind direction accelerates orientation. The CFD analysis indicates flow is steered into the trap during incident wind flow. The trap has a low profile and there is only a small decrease in mass flow rate for multiple traps, poles and rows of poles. The efficiency of the trap was evaluated against an isokinetic sampler and found to be greater than 95%. The centre pole is a key element of the design, minimally decreasing trap efficiency. Finally, field comparisons with the trap of Sherman et al. (2014) yielded comparable estimates of vertical sand flux. The trap described in this paper provides accurate estimates of sand transport in a wide range of field conditions.

Towards on-chip time-resolved thermal mapping with micro-/nanosensor arrays

PubMed Central

2012-01-01

In recent years, thin-film thermocouple (TFTC) array emerged as a versatile candidate in micro-/nanoscale local temperature sensing for its high resolution, passive working mode, and easy fabrication. However, some key issues need to be taken into consideration before real instrumentation and industrial applications of TFTC array. In this work, we will demonstrate that TFTC array can be highly scalable from micrometers to nanometers and that there are potential applications of TFTC array in integrated circuits, including time-resolvable two-dimensional thermal mapping and tracing the heat source of a device. Some potential problems and relevant solutions from a view of industrial applications will be discussed in terms of material selection, multiplexer reading, pattern designing, and cold-junction compensation. We show that the TFTC array is a powerful tool for research fields such as chip thermal management, lab-on-a-chip, and other novel electrical, optical, or thermal devices. PMID:22931306

Betavoltaic effect in titanium dioxide nanotube arrays under build-in potential difference

NASA Astrophysics Data System (ADS)

Zhang, Qiang; Chen, Ranbin; San, Haisheng; Liu, Guohua; Wang, Kaiying

2015-05-01

We report the fabrication of sandwich-type metal/TiO2 nanotube (TNT) array/metal structures as well as their betavoltaic effects under build-in voltage through contact potential difference. The sandwiched structure is integrated by immobilized TNT arrays on Ti foil with radioisotope 63Ni planar source on Ni substrate (Ni-63Ni/TNT array/Ti). Under irradiation of the 63Ni source with activity of 8 mCi, the structure (TNT diameter ∼ 130 nm, length ∼ 11 μm) presents optimum energy conversion efficiency of 7.30% with open-circuit voltage of 1.54 V and short-circuit current of 12.43 nA. The TNT arrays exhibit a highly potential for developing betavoltaic batteries due to its wide band gap and nanotube array configuration. The TNT-betavoltaic concept offers a facile solution for micro/nano electronics with high efficiency and long life-time instead of conventional planar junction-type batteries.

Electrostatic particle trap for ion beam sputter deposition

DOEpatents

Vernon, Stephen P.; Burkhart, Scott C.

2002-01-01

A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

Coherent all-optical control of ultracold atoms arrays in permanent magnetic traps.

PubMed

Abdelrahman, Ahmed; Mukai, Tetsuya; Häffner, Hartmut; Byrnes, Tim

2014-02-10

We propose a hybrid architecture for quantum information processing based on magnetically trapped ultracold atoms coupled via optical fields. The ultracold atoms, which can be either Bose-Einstein condensates or ensembles, are trapped in permanent magnetic traps and are placed in microcavities, connected by silica based waveguides on an atom chip structure. At each trapping center, the ultracold atoms form spin coherent states, serving as a quantum memory. An all-optical scheme is used to initialize, measure and perform a universal set of quantum gates on the single and two spin-coherent states where entanglement can be generated addressably between spatially separated trapped ultracold atoms. This allows for universal quantum operations on the spin coherent state quantum memories. We give detailed derivations of the composite cavity system mediated by a silica waveguide as well as the control scheme. Estimates for the necessary experimental conditions for a working hybrid device are given.

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

NASA Astrophysics Data System (ADS)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

PubMed Central

Zhou, Keya; Guo, Zhongyi; Liu, Shutian; Lee, Jung-Ho

2015-01-01

Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells. PMID:28793457

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350°C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Characterization of Nanofluidic Entropic Trap Array for DNA Separation

NASA Astrophysics Data System (ADS)

Han, Jongyoon

2003-03-01

Micromachined nanoscale fluidic structures can provide new opportunities in biomolecule manipulation and sorting, because their chemical and physical properties can be controlled easily unlike random nanoporous materials. As an example of regular nanostructures used for biomolecule manipulation and sorting, a nanofluidic entropic trap array for DNA separation is presented. Nanofluidic channels as thin as 75nm were used as a molecular sieve instead of agarose gel for DNA separation. The interaction between DNA molecules and the nanofluidic structure determines the DNA migration speed, which was used to separate DNA molecules in a dc electrophoresis. Separation of long DNA (up to 200kbp) has been achieved within 30 minutes, using less than a picogram quantities of DNA, with only 1.5cm long channels.[1] In addition to the efficiency improvement, nanofluidic DNA entropic traps have a regular structure that can be easily modeled theoretically. The theoretical model could be the basis for improving the system performance for further optimization in separation size range and resolution. The process of DNA moving out of the entropic trap was theoretically modeled, and the prediction of the theoretical model was compared with the experimental data.[2] The selectivity, resolution, and the separation range of DNA for a given entropic trap separation system was discussed in terms of the number of entropic traps, various structural parameters of the system, and the electric field. It is expected that this system could be used for analyzing a small amount of ultra-long DNA molecules. (1) Han, J.; Craighead, H. G. Science 2000, 288, 1026-1029. (2) Han, J.; Craighead, H. G. Anal. Chem. 2002, 74, 394-401.

Hydrodynamic trapping for rapid assembly and in situ electrical characterization of droplet interface bilayer arrays

DOE PAGES

Nguyen, Mary -Anne; Srijanto, Bernadeta; Collier, C. Patrick; ...

2016-08-02

The droplet interface bilayer (DIB) is a modular technique for assembling planar lipid membranes between water droplets in oil. The DIB method thus provides a unique capability for developing digital, droplet-based membrane platforms for rapid membrane characterization, drug screening and ion channel recordings. This paper demonstrates a new, low-volume microfluidic system that automates droplet generation, sorting, and sequential trapping in designated locations to enable the rapid assembly of arrays of DIBs. The channel layout of the device is guided by an equivalent circuit model, which predicts that a serial arrangement of hydrodynamic DIB traps enables sequential droplet placement and minimizesmore » the hydrodynamic pressure developed across filled traps to prevent squeeze-through of trapped droplets. Furthermore, the incorporation of thin-film electrodes fabricated via evaporation metal deposition onto the glass substrate beneath the channels allows for the first time in situ, simultaneous electrical interrogation of multiple DIBs within a sealed device. Combining electrical measurements with imaging enables measurements of membrane capacitance and resistance and bilayer area, and our data show that DIBs formed in different trap locations within the device exhibit similar sizes and transport properties. Simultaneous, single channel recordings of ion channel gating in multiple membranes are obtained when alamethicin peptides are incorporated into the captured droplets, qualifying the thin-film electrodes as a means for measuring stimuli-responsive functions of membrane-bound biomolecules. Furthermore, this novel microfluidic-electrophysiology platform provides a reproducible, high throughput method for performing electrical measurements to study transmembrane proteins and biomembranes in low-volume, droplet-based membranes.« less

Hydrodynamic trapping for rapid assembly and in situ electrical characterization of droplet interface bilayer arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Mary -Anne; Srijanto, Bernadeta; Collier, C. Patrick

The droplet interface bilayer (DIB) is a modular technique for assembling planar lipid membranes between water droplets in oil. The DIB method thus provides a unique capability for developing digital, droplet-based membrane platforms for rapid membrane characterization, drug screening and ion channel recordings. This paper demonstrates a new, low-volume microfluidic system that automates droplet generation, sorting, and sequential trapping in designated locations to enable the rapid assembly of arrays of DIBs. The channel layout of the device is guided by an equivalent circuit model, which predicts that a serial arrangement of hydrodynamic DIB traps enables sequential droplet placement and minimizesmore » the hydrodynamic pressure developed across filled traps to prevent squeeze-through of trapped droplets. Furthermore, the incorporation of thin-film electrodes fabricated via evaporation metal deposition onto the glass substrate beneath the channels allows for the first time in situ, simultaneous electrical interrogation of multiple DIBs within a sealed device. Combining electrical measurements with imaging enables measurements of membrane capacitance and resistance and bilayer area, and our data show that DIBs formed in different trap locations within the device exhibit similar sizes and transport properties. Simultaneous, single channel recordings of ion channel gating in multiple membranes are obtained when alamethicin peptides are incorporated into the captured droplets, qualifying the thin-film electrodes as a means for measuring stimuli-responsive functions of membrane-bound biomolecules. Furthermore, this novel microfluidic-electrophysiology platform provides a reproducible, high throughput method for performing electrical measurements to study transmembrane proteins and biomembranes in low-volume, droplet-based membranes.« less

Recent Progress on the Stretched Lens Array (SLA)

NASA Technical Reports Server (NTRS)

O'Neill, Markl; McDanal, A. J.; Piszczor, Michael; George, Patrick; Eskenazi, Michael; Botke, Matthew; Edwards, David; Hoppe, David; Brandhorst, Henry

2005-01-01

At the last Space Photovoltaic Research and Technology Conference, SPRAT XVII, held during the fateful week of 9/11/01, our team presented a paper on the early developments related to the new Stretched Lens Array (SLA), including its evolution from the successful SCARLET array on the NASA/JPL Deep Space 1 spacecraft. Within the past two years, the SLA team has made significant progress in the SLA technology, including the successful fabrication and testing of a complete four-panel prototype solar array wing (Fig. 1). The prototype wing verified the mechanical and structural design of the rigid-panel SLA approach, including multiple successful demonstrations of automatic wing deployment. One panel in the prototype wing included four fully functional photovoltaic receivers, employing triple-junction solar cells.

Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography

NASA Astrophysics Data System (ADS)

Anada, Satoshi; Yamamoto, Kazuo; Sasaki, Hirokazu; Shibata, Naoya; Hori, Yujin; Kinugawa, Kouhei; Imamura, Akihiro; Hirayama, Tsukasa

2017-12-01

We combined an in situ biasing technique with phase-shifting electron holography, which can simultaneously achieve a high precision and high spatial resolution, to measure the electric potential, field, and charge density profiles across a GaAs p-n tunnel junction. A thin-film specimen was prepared by thinning one part of a bulk specimen using a cryo focused ion beam (FIB) system. We obtained precise electric potential profiles and successfully converted them into smooth electric field and charge density profiles without any fitting simulations. From the relationship between the applied voltage and measured height of the potential step across the p-n junction, the built-in potential of the p-n junction was determined to be 1.55 ± 0.02 V. The electric field profiles showed that the unbiased p-n junction had a depletion layer with a width of 24 ± 1 nm; the width increased to 26 ± 1 nm under a reverse bias of -0.3 V and decreased to 22 ± 1 nm under a forward bias of 0.5 V. Moreover, the charge density profiles indicated the presence of passivated dopants and/or trapped carriers even in the internal active layer of the specimen, with little damage introduced by FIB milling.

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

PubMed

Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

2013-04-07

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

NASA Astrophysics Data System (ADS)

Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

2013-03-01

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 107 cm-2. The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Chervenak, F. M.

2011-01-01

We are developing kilo-pixel arrays of TES microcalorimeters to enable high-resolution X-ray imaging spectrometers for future X-ray observatories and laboratory astrophysics experiments. Our current array design was targeted as a prototype for the X-ray Microcalorimeter Spectrometer proposed for the International X-ray Observatory, which calls for a 40x40-pixel core array of 300 micron devices with 2.5 e V energy resolution (at 6 keV). Here we present device characterization of our 32x32 arrays, including X-ray spectral performance of individual pixels within the array. We present our results in light of the understanding that our Mo/Au TESs act as weak superconducting links, causing the TES critical current (Ic) and transition shape to oscillate with applied magnetic field (B). We show Ic(B) measurements and discuss the uniformity of these measurements across the array, as well as implications regarding the uniformity of device noise and response. In addition, we are working to reduce pixel-to-pixel electrical and thermal crosstalk; we present recent test results from an array that has microstrip wiring and an angle-evaporated Cu backside heatsinking layer, which provides Cu coverage on the four sidewalls of the silicon wells beneath each pixel.