Cost-effective masks for deep x-ray lithography

NASA Astrophysics Data System (ADS)

Scheunemann, Heinz-Ulrich; Loechel, Bernd; Jian, Linke; Schondelmaier, Daniel; Desta, Yohannes M.; Goettert, Jost

2003-04-01

The production of X-ray masks is one of the key techniques for X-ray lithography and the LIGA process. Different ways for the fabrication of X-ray masks has been established. Very sophisticated, difficult and expensive procedures are required to produce high precision and high quality X-ray masks. In order to minimize the cost of an X-ray mask, the mask blank must be inexpensive and readily available. The steps involved in the fabrication process must also be minimal. In the past, thin membranes made of titanium, silicon carbide, silicon nitride (2-5μm) or thick beryllium substrates (500μm) have been used as mask blanks. Thin titanium and silicon compounds have very high transparency for X-rays; therefore, these materials are predestined for use as mask membrane material. However, the handling and fabrication of thin membranes is very difficult, thus expensive. Beryllium is highly transparent to X-rays, but the processing and use of beryllium is risky due to potential toxicity. During the past few years graphite based X-ray masks have been in use at various research centers, but the sidewall quality of the generated resist patterns is in the range of 200-300 nm Ra. We used polished graphite to improve the sidewall roughness, but polished graphite causes other problems in the fabrication of X-ray masks. This paper describes the advantages associated with the use of polished graphite as mask blank as well as the fabrication process for this low cost X-ray mask. Alternative membrane materials will also be discussed.

Planar techniques for fabricating X-ray diffraction gratings and zone plates

NASA Technical Reports Server (NTRS)

Smith, H. I.; Anderson, E. H.; Hawryluk, A. M.; Schattenburg, M. L.

1984-01-01

The state of current planar techniques in the fabrication of Fresnel zone plates and diffraction gratings is reviewed. Among the fabrication techniques described are multilayer resist techniques; scanning electron beam lithography; and holographic lithography. Consideration is also given to: X-ray lithography; ion beam lithography; and electroplating. SEM photographs of the undercut profiles obtained in a type AZ 135OB photoresistor by holographic lithography are provided.

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Fabricating Blazed Diffraction Gratings by X-Ray Lithography

NASA Technical Reports Server (NTRS)

Mouroulis, Pantazis; Hartley, Frank; Wilson, Daniel

2004-01-01

Gray-scale x-ray lithography is undergoing development as a technique for fabricating blazed diffraction gratings. As such, gray-scale x-ray lithography now complements such other grating-fabrication techniques as mechanical ruling, holography, ion etching, laser ablation, laser writing, and electron-beam lithography. Each of these techniques offers advantages and disadvantages for implementing specific grating designs; no single one of these techniques can satisfy the design requirements for all applications. Gray-scale x-ray lithography is expected to be advantageous for making gratings on steeper substrates than those that can be made by electron-beam lithography. This technique is not limited to sawtooth groove profiles and flat substrates: various groove profiles can be generated on arbitrarily shaped (including highly curved) substrates with the same ease as sawtooth profiles can be generated on flat substrates. Moreover, the gratings fabricated by this technique can be made free of ghosts (spurious diffraction components attributable to small spurious periodicities in the locations of grooves). The first step in gray-scale x-ray lithography is to conformally coat a substrate with a suitable photoresist. An x-ray mask (see Figure 1) is generated, placed between the substrate and a source of collimated x-rays, and scanned over the substrate so as to create a spatial modulation in the exposure of the photoresist. Development of the exposed photoresist results in a surface corrugation that corresponds to the spatial modulation and that defines the grating surface. The grating pattern is generated by scanning an appropriately shaped x-ray area mask along the substrate. The mask example of Figure 1 would generate a blazed grating profile when scanned in the perpendicular direction at constant speed, assuming the photoresist responds linearly to incident radiation. If the resist response is nonlinear, then the mask shape can be modified to account for the nonlinearity and produce a desired groove profile. An example of grating grooves generated by this technique is shown in Figure 2. A maximum relative efficiency of 88 percent has been demonstrated.

Tunable cw Single-Frequency Source for Injection Seeding 2-micrometer Lasers

DTIC Science & Technology

1990-06-01

Nd:glass Slab Asilomar, CA, January, 1989. Laser for X-ray Lithography ," presented at Lasers 11. R. L. Byer, "Solid State Lasers for Accelerator 89, New...Alumni Association (Stanford Club of M.K. Reed and R.L. Byer, "A Nd:glass Slab Connecticut), April, 1989. Laserfor X-ray Lithography ," to be...and R.L. Byer, "A Nd:Glass Slab asymmetric quantum wells," invited paper QWA1 Laser for Soft X-ray Lithography ", paper MB4, International Quantum

Sub-Optical Lithography With Nanometer Definition Masks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.; Malek, Chantal Khan; Neogi, Jayant

2000-01-01

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

Fabrication of cobalt magnetic nanostructures using atomic force microscope lithography.

PubMed

Chu, Haena; Yun, Seonghun; Lee, Haiwon

2013-12-01

Cobalt nanopatterns are promising assemblies for patterned magnetic storage applications. The fabrication of cobalt magnetic nanostructures on n-tridecylamine x hydrochloride (TDA x HCl) self-assembled monolayer (SAM) modified silicon surfaces using direct writing atomic force microscope (AFM) lithography for localized electrochemical reduction of cobalt ions was demonstrated. The ions were reduced to form metal nanowires along the direction of the electricfield between the AFM tip and the substrate. In this lithography process, TDA x HCI SAMs play an important role in the lithography process for improving the resolution of cobalt nanopatterns by preventing nonspecific reduction of cobalt ions on the unwritten background. Cobalt nanowires and nanodots with width of 225 +/- 26 nm and diameter of 208 +/- 28 nm were successfully fabricated. Platinium-coated polydimethylsiloxane (PDMS) stamp was used fabricating bulk cobalt structures which can be detected by energy dispersive X-ray spectroscopy for element analysis and the physical and magnetic properties of these cobalt nanopatterns were characterized using AFM and magnetic force microscope.

Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

2013-03-01

In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

Report of the workshop on transferring X-ray Lithography Synchrotron (XLS) technology to industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marcuse, W.

1987-01-01

This paper reports on plans to develop an x-ray synchrotron for use in lithography. The primary concern of the present paper is technology transfer from national laboratories to private industry. (JDH)

National Synchrotron Light Source annual report 1991

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hulbert, S.L.; Lazarz, N.M.

1992-04-01

This report discusses the following research conducted at NSLS: atomic and molecular science; energy dispersive diffraction; lithography, microscopy and tomography; nuclear physics; UV photoemission and surface science; x-ray absorption spectroscopy; x-ray scattering and crystallography; x-ray topography; workshop on surface structure; workshop on electronic and chemical phenomena at surfaces; workshop on imaging; UV FEL machine reviews; VUV machine operations; VUV beamline operations; VUV storage ring parameters; x-ray machine operations; x-ray beamline operations; x-ray storage ring parameters; superconducting x-ray lithography source; SXLS storage ring parameters; the accelerator test facility; proposed UV-FEL user facility at the NSLS; global orbit feedback systems; and NSLSmore » computer system.« less

National Synchrotron Light Source annual report 1991. Volume 1, October 1, 1990--September 30, 1991

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hulbert, S.L.; Lazarz, N.M.

1992-04-01

This report discusses the following research conducted at NSLS: atomic and molecular science; energy dispersive diffraction; lithography, microscopy and tomography; nuclear physics; UV photoemission and surface science; x-ray absorption spectroscopy; x-ray scattering and crystallography; x-ray topography; workshop on surface structure; workshop on electronic and chemical phenomena at surfaces; workshop on imaging; UV FEL machine reviews; VUV machine operations; VUV beamline operations; VUV storage ring parameters; x-ray machine operations; x-ray beamline operations; x-ray storage ring parameters; superconducting x-ray lithography source; SXLS storage ring parameters; the accelerator test facility; proposed UV-FEL user facility at the NSLS; global orbit feedback systems; and NSLSmore » computer system.« less

Soft x-ray reduction camera for submicron lithography

DOEpatents

Hawryluk, Andrew M.; Seppala, Lynn G.

1991-01-01

Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm.sup.2. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics.

Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Ro, Hyun Wook; Jones, Ronald L.; Peng, Huagen; Lee, Hae-Jeong; Lin, Eric K.; Karim, Alamgir; Yoon, Do Y.; Gidley, David W.; Soles, Christopher L.

2008-03-01

Direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. We report direct imprinting of sub-100 nm features into a high modulus methylsilsesquioxane-based organosilicate glass (OSG) material. An excellent fidelity of the pattern transfer process is quantified with nm precision using critical dimension small angle X-ray scattering (CD-SAXS) and specular X-ray reflectivity (SXR). X-ray porosimetry (XRP) and positron annihilation lifetime spectroscopy (PALS) measurements indicate that imprinting increases the inherent microporosity of the methylsilsequioxane-based OSG material. When a porogen (pore generating material) is added, imprinting decreases the population of mesopores associated with the porogen while retaining the enhanced microporosity. The net effect is a decrease the pore interconnectivity. There is also evidence for a sealing effect that is interpreted as an imprint induced dense skin at the surface of the porous pattern.

X-ray/VUV transmission gratings for astrophysical and laboratory applications

NASA Technical Reports Server (NTRS)

Schattenburg, M. L.; Anderson, E. H.; Smith, Henry I.

1990-01-01

This paper describes the techniques used to fabricate deep-submicron-period transmission gratings for astrophysical and laboratory applications, with special attention given to the major steps involved in the transmission grating fabrication. These include the holographic lithography procedure used to pattern the master transmission grating, the fabrication of X-ray mask, the X-ray lithography step used to transfer the X-ray mask pattern into a substrate, and the electroplating of the substrate to form the final grating pattern. The various ways in which transmission gratings can be used in X-ray and VUV spectroscopy are discussed together with some examples of experiments reported in the literature.

X-ray/EUV optics for astronomy, microscopy, polarimetry, and projection lithography; Proceedings of the Meeting, San Diego, CA, July 9-13, 1990

NASA Technical Reports Server (NTRS)

Hoover, Richard B. (Editor); Walker, Arthur B. C., Jr. (Editor)

1991-01-01

Topics discussed in this issue include the fabrication of multilayer X-ray/EUV coatings; the design, characterization, and test of multilayer X-ray/EUV coatings; multilayer X-ray/EUV monochromators and imaging microscopes; X-ray/EUV telescopes; the test and calibration performance of X-ray/EUV instruments; XUV/soft X-ray projection lithography; X-ray/EUV space observatories and missions; X-ray/EUV telescopes for solar research; X-ray/EUV polarimetry; X-ray/EUV spectrographs; and X-ray/EUV filters and gratings. Papers are presented on the deposition-controlled uniformity of multilayer mirrors, interfaces in Mo/Si multilayers, the design and analysis of an aspherical multilayer imaging X-ray microscope, recent developments in the production of thin X-ray reflecting foils, and the ultraprecise scanning technology. Consideration is also given to an active sun telescope array, the fabrication and performance at 1.33 nm of a 0.24-micron-period multilayer grating, a cylindrical proportional counter for X-ray polarimetry, and the design and analysis of the reflection grating arrays for the X-Ray Multi-Mirror Mission.

Soft x-ray reduction camera for submicron lithography

DOEpatents

Hawryluk, A.M.; Seppala, L.G.

1991-03-26

Soft x-ray projection lithography can be performed using x-ray optical components and spherical imaging lenses (mirrors), which form an x-ray reduction camera. The x-ray reduction is capable of projecting a 5x demagnified image of a mask onto a resist coated wafer using 4.5 nm radiation. The diffraction limited resolution of this design is about 135 nm with a depth of field of about 2.8 microns and a field of view of 0.2 cm[sup 2]. X-ray reflecting masks (patterned x-ray multilayer mirrors) which are fabricated on thick substrates and can be made relatively distortion free are used, with a laser produced plasma for the source. Higher resolution and/or larger areas are possible by varying the optic figures of the components and source characteristics. 9 figures.

Radiopaque Resists for Two-Photon Lithography To Enable Submicron 3D Imaging of Polymer Parts via X-ray Computed Tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sourabh K.; Oakdale, James S.; Cuadra, Jefferson A.

Two-photon lithography (TPL) is a high-resolution additive manufacturing (AM) technique capable of producing arbitrarily complex three-dimensional (3D) microstructures with features 2–3 orders of magnitude finer than human hair. This process finds numerous applications as a direct route toward the fabrication of novel optical and mechanical metamaterials, miniaturized optics, microfluidics, biological scaffolds, and various other intricate 3D parts. As TPL matures, metrology and inspection become a crucial step in the manufacturing process to ensure that the geometric form of the end product meets design specifications. X-ray-based computed tomography (CT) is a nondestructive technique that can provide this inspection capability for themore » evaluation of complex internal 3D structure. However, polymeric photoresists commonly used for TPL, as well as other forms of stereolithography, poorly attenuate X-rays due to the low atomic number (Z) of their constituent elements and therefore appear relatively transparent during imaging. We present the development of optically clear yet radiopaque photoresists for enhanced contrast under X-ray CT. We have synthesized iodinated acrylate monomers to formulate high-Z photoresist materials that are capable of forming 3D microstructures with sub-150 nm features. In addition, we have developed a formulation protocol to match the refractive index of the photoresists to the immersion medium of the objective lens so as to enable dip-in laser lithography, a direct laser writing technique for producing millimeter-tall structures. Our radiopaque photopolymer then resists increase X-ray attenuation by a factor of more than 10 times without sacrificing the sub-150 nm feature resolution or the millimeter-scale part height. Thus, our resists can successfully replace existing photopolymers to generate AM parts that are suitable for inspection via X-ray CT. By providing the “feedstock” for radiopaque AM parts, our resist formulation is expected to play a critical role in enabling fabrication of functional polymer parts to tight design tolerances.« less

Radiopaque Resists for Two-Photon Lithography To Enable Submicron 3D Imaging of Polymer Parts via X-ray Computed Tomography

DOE PAGES

Saha, Sourabh K.; Oakdale, James S.; Cuadra, Jefferson A.; ...

2017-11-24

Two-photon lithography (TPL) is a high-resolution additive manufacturing (AM) technique capable of producing arbitrarily complex three-dimensional (3D) microstructures with features 2–3 orders of magnitude finer than human hair. This process finds numerous applications as a direct route toward the fabrication of novel optical and mechanical metamaterials, miniaturized optics, microfluidics, biological scaffolds, and various other intricate 3D parts. As TPL matures, metrology and inspection become a crucial step in the manufacturing process to ensure that the geometric form of the end product meets design specifications. X-ray-based computed tomography (CT) is a nondestructive technique that can provide this inspection capability for themore » evaluation of complex internal 3D structure. However, polymeric photoresists commonly used for TPL, as well as other forms of stereolithography, poorly attenuate X-rays due to the low atomic number (Z) of their constituent elements and therefore appear relatively transparent during imaging. We present the development of optically clear yet radiopaque photoresists for enhanced contrast under X-ray CT. We have synthesized iodinated acrylate monomers to formulate high-Z photoresist materials that are capable of forming 3D microstructures with sub-150 nm features. In addition, we have developed a formulation protocol to match the refractive index of the photoresists to the immersion medium of the objective lens so as to enable dip-in laser lithography, a direct laser writing technique for producing millimeter-tall structures. Our radiopaque photopolymer then resists increase X-ray attenuation by a factor of more than 10 times without sacrificing the sub-150 nm feature resolution or the millimeter-scale part height. Thus, our resists can successfully replace existing photopolymers to generate AM parts that are suitable for inspection via X-ray CT. By providing the “feedstock” for radiopaque AM parts, our resist formulation is expected to play a critical role in enabling fabrication of functional polymer parts to tight design tolerances.« less

Optimizing a synchrotron based x-ray lithography system for IC manufacturing

NASA Astrophysics Data System (ADS)

Kovacs, Stephen; Speiser, Kenneth; Thaw, Winston; Heese, Richard N.

1990-05-01

The electron storage ring is a realistic solution as a radiation source for production grade, industrial X-ray lithography system. Today several large scale plans are in motion to design and implement synchrotron storage rings of different types for this purpose in the USA and abroad. Most of the scientific and technological problems related to the physics, design and manufacturing engineering, and commissioning of these systems for microlithography have been resolved or are under extensive study. However, investigation on issues connected to application of Synchrotron Orbit Radiation (SOR ) in chip production environment has been somewhat neglected. In this paper we have filled this gap pointing out direct effects of some basic synchrotron design parameters and associated subsystems (injector, X-ray beam line) on the operation and cost of lithography in production. The following factors were considered: synchrotron configuration, injection energy, beam intensity variability, number of beam lines and wafer exposure concept. A cost model has been worked out and applied to three different X-ray Lithography Source (XLS) systems. The results of these applications are compared and conclusions drawn.

Report on the fifth workshop on synchrotron x ray lithography

NASA Astrophysics Data System (ADS)

Williams, G. P.; Godel, J. B.; Brown, G. S.; Liebmann, W.

Semiconductors comprise a greater part of the United States economy than the aircraft, steel, and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990s. X ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin, and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the exposure tool, that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x ray lithography and set a time frame, the other to focus on sources.

Rapid prototyping of Fresnel zone plates via direct Ga(+) ion beam lithography for high-resolution X-ray imaging.

PubMed

Keskinbora, Kahraman; Grévent, Corinne; Eigenthaler, Ulrike; Weigand, Markus; Schütz, Gisela

2013-11-26

A significant challenge to the wide utilization of X-ray microscopy lies in the difficulty in fabricating adequate high-resolution optics. To date, electron beam lithography has been the dominant technique for the fabrication of diffractive focusing optics called Fresnel zone plates (FZP), even though this preparation method is usually very complicated and is composed of many fabrication steps. In this work, we demonstrate an alternative method that allows the direct, simple, and fast fabrication of FZPs using focused Ga(+) beam lithography practically, in a single step. This method enabled us to prepare a high-resolution FZP in less than 13 min. The performance of the FZP was evaluated in a scanning transmission soft X-ray microscope where nanostructures as small as sub-29 nm in width were clearly resolved, with an ultimate cutoff resolution of 24.25 nm, demonstrating the highest first-order resolution for any FZP fabricated by the ion beam lithography technique. This rapid and simple fabrication scheme illustrates the capabilities and the potential of direct ion beam lithography (IBL) and is expected to increase the accessibility of high-resolution optics to a wider community of researchers working on soft X-ray and extreme ultraviolet microscopy using synchrotron radiation and advanced laboratory sources.

OSA Proceedings of the Topical Meeting on Soft-X-Ray Projection Lithography Held in Monterey, California on 10-12 April 1991. Volume 12

DTIC Science & Technology

1992-05-22

Carbide because of its high thermal the mirror on its backside or edge. Shott Zerodur conductivity. Edge cooling causes a larger exceeded the limit by about...Characterization Angstrom-level noncontact profiling of mirrors for soft x-ray lithography............ 134 Paul Glenn Nonspecular Scattering from X-Ray...structed by patterning a Mo/Si Tropel Division of GCA Corporation. multilayer coated silicon wafer. The mirrors were coated at AT&T Bell The multilayer

X-ray lithography using holographic images

DOEpatents

Howells, Malcolm R.; Jacobsen, Chris

1995-01-01

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA)

NASA Astrophysics Data System (ADS)

Corelli, J. C.; Steckl, A. J.; Pulver, D.; Randall, J. N.

We have investigated the process of image enhancement in high resolution lithography through polymer grafting techniques. Sensitivity gains of 10 3-10 4 were obtained for H +, X-ray, e-beam and deep-UV irradiations. Ultralow dose effects in 60 keV H + irradiated PMMA have been observed through the use of the acrylic acid (AA) monomer grafting with irradiated PMMA. At conventional doses of 10 10 cm -2 an inner structure of each feature is revealed. At doses of (1-2) X 10 9 cm -2, discrete events within the exposed regions are observable. This is the first time that individual events have been observable in a lithography process and sets the upper limit in the useful sensitivity of the resist and ion lithography process. This effect is directly observable only with ions, because of their higher efficiency per particle than either photons or electrons.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

Antenna Solar Energy to Electricity Converter (ASETEC)

DTIC Science & Technology

1989-11-01

radiation damage • x-ray masks: all aspects • synchrotron lithography • high brightness compact sources • x-ray lithography system considerations...IB.\\VAlmaden Research Center Cochairs: Daryl Ann Doane, DAD Technologies, Inc.; Elsa Reichmanis, AT&T Bell Laboratories This conferenc’.’ is a...Philips Research- Laboratories/Signetics Corporation DiaSY Nyyssonen, CD Metrology, Inc. Victor Pol, - AT&T Bell Laboratories Elsa Reichmanis

Vacuum system for room temperature X-ray lithography source (XLS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schuchman, J.C.

1988-09-30

A prototype room-temperature X-Ray Lithography Source (XLS)was proposed to be built at Brookhaven National Laboratory as part of a technology-transfer- to-American-industry program. The overall machine comprises a full energy linac, a 170 meter long transport line, and a 39 meter circumference storage ring. The scope of this paper will be limited to describing the storage ring vacuum system. (AIP)

Vacuum system for room temperature X-ray lithography source (XLS)

NASA Astrophysics Data System (ADS)

Schuchman, J. C.

1988-09-01

A prototype room-temperature X-Ray Lithography Source (XLS)was proposed to be built at Brookhaven National Laboratory as part of a technology-transfer- to-American-industry program. The overall machine comprises a full energy linac, a 170 meter long transport line, and a 39 meter circumference storage ring. The scope of this paper will be limited to describing the storage ring vacuum system. (AIP)

Compton backscattered collimated x-ray source

DOEpatents

Ruth, R.D.; Huang, Z.

1998-10-20

A high-intensity, inexpensive and collimated x-ray source is disclosed for applications such as x-ray lithography is disclosed. An intense pulse from a high power laser, stored in a high-finesse resonator, repetitively collides nearly head-on with and Compton backscatters off a bunched electron beam, having relatively low energy and circulating in a compact storage ring. Both the laser and the electron beams are tightly focused and matched at the interaction region inside the optical resonator. The laser-electron interaction not only gives rise to x-rays at the desired wavelength, but also cools and stabilizes the electrons against intrabeam scattering and Coulomb repulsion with each other in the storage ring. This cooling provides a compact, intense bunch of electrons suitable for many applications. In particular, a sufficient amount of x-rays can be generated by this device to make it an excellent and flexible Compton backscattered x-ray (CBX) source for high throughput x-ray lithography and many other applications. 4 figs.

Compton backscattered collimated x-ray source

DOEpatents

Ruth, Ronald D.; Huang, Zhirong

1998-01-01

A high-intensity, inexpensive and collimated x-ray source for applications such as x-ray lithography is disclosed. An intense pulse from a high power laser, stored in a high-finesse resonator, repetitively collides nearly head-on with and Compton backscatters off a bunched electron beam, having relatively low energy and circulating in a compact storage ring. Both the laser and the electron beams are tightly focused and matched at the interaction region inside the optical resonator. The laser-electron interaction not only gives rise to x-rays at the desired wavelength, but also cools and stabilizes the electrons against intrabeam scattering and Coulomb repulsion with each other in the storage ring. This cooling provides a compact, intense bunch of electrons suitable for many applications. In particular, a sufficient amount of x-rays can be generated by this device to make it an excellent and flexible Compton backscattered x-ray (CBX) source for high throughput x-ray lithography and many other applications.

Compton backscattered collmated X-ray source

DOEpatents

Ruth, Ronald D.; Huang, Zhirong

2000-01-01

A high-intensity, inexpensive and collimated x-ray source for applications such as x-ray lithography is disclosed. An intense pulse from a high power laser, stored in a high-finesse resonator, repetitively collides nearly head-on with and Compton backscatters off a bunched electron beam, having relatively low energy and circulating in a compact storage ring. Both the laser and the electron beams are tightly focused and matched at the interaction region inside the optical resonator. The laser-electron interaction not only gives rise to x-rays at the desired wavelength, but also cools and stabilizes the electrons against intrabeam scattering and Coulomb repulsion with each other in the storage ring. This cooling provides a compact, intense bunch of electrons suitable for many applications. In particular, a sufficient amount of x-rays can be generated by this device to make it an excellent and flexible Compton backscattered x-ray (CBX) source for high throughput x-ray lithography and many other applications.

Large-area soft x-ray projection lithography using multilayer mirrors structured by RIE

NASA Astrophysics Data System (ADS)

Rahn, Steffen; Kloidt, Andreas; Kleineberg, Ulf; Schmiedeskamp, Bernt; Kadel, Klaus; Schomburg, Werner K.; Hormes, F. J.; Heinzmann, Ulrich

1993-01-01

SXPL (soft X-ray projection lithography) is one of the most promising applications of X-ray reflecting optics using multilayer mirrors. Within our collaboration, such multilayer mirrors were fabricated, characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors were produced by electron beam evaporation in UHV under thermal treatment with an in-situ X-ray controlled thickness in the region of 2d equals 14 nm. The reflectivities measured at normal incidence reached up to 54%. Various surface analysis techniques have been applied in order to characterize and optimize the X-ray mirrors. The multilayers were patterned by reactive ion etching (RIE) with CF(subscript 4), using a photoresist as the etch mask, thus producing X-ray reflection masks. The masks were tested in the synchrotron radiation laboratory of the electron accelerator ELSA at the Physikalisches Institut of Bonn University. A double crystal X-ray monochromator was modified so as to allow about 0.5 cm(superscript 2) of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto the resist (Hoechst AZ PF 514), which was mounted at an average distance of about 7 mm. In the first test-experiments, structure sizes down to 8 micrometers were nicely reproduced over the whole of the exposed area. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

Chromaticity calculations and code comparisons for x-ray lithography source XLS and SXLS rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parsa, Z.

1988-06-16

This note presents the chromaticity calculations and code comparison results for the (x-ray lithography source) XLS (Chasman Green, XUV Cosy lattice) and (2 magnet 4T) SXLS lattices, with the standard beam optic codes, including programs SYNCH88.5, MAD6, PATRICIA88.4, PATPET88.2, DIMAD, BETA, and MARYLIE. This analysis is a part of our ongoing accelerator physics code studies. 4 figs., 10 tabs.

Vitreous carbon mask substrate for X-ray lithography

DOEpatents

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography.

PubMed

Sommargren, G E; Seppala, L G

1993-12-01

A condenser system couples the radiation source to an imaging system, controlling the uniformity and partial coherence at the object, which ultimately affects the characteristics of the aerial image. A soft-x-ray projection lithography system based on a ring-field imaging system and a laser-produced plasma x-ray source places considerable constraints on the design of a condenser system. Two designs are proposed, critical illumination and Köhler illumination, each of which requires three mirrors and scanning for covering the entire ring field with the required uniformity and partial coherence. Images based on Hopkins' formulation of partially coherent imaging are simulated.

Study of a chemically amplified resist for X-ray lithography by Fourier transform infrared spectroscopy.

PubMed

Tan, T L; Wong, D; Lee, P; Rawat, R S; Patran, A

2004-11-01

Future applications of microelectromechanical systems (MEMS) require lithographic performance of very high aspect ratio. Chemically amplified resists (CARs) such as the negative tone commercial SU-8 provide critical advantages in sensitivity, resolution, and process efficiency in deep ultraviolet, electron-beam, and X-ray lithographies (XRLs), which result in a very high aspect ratio. In this investigation, an SU-8 resist was characterized and optimized for X-ray lithographic applications by studying the cross-linking process of the resist under different conditions of resist thickness and X-ray exposure dose. The exposure dose of soft X-ray (SXR) irradiation at the average weighted wavelength of 1.20 nm from a plasma focus device ranges from 100 to 1600 mJ/cm(2) on the resist surface. Resist thickness varies from 3.5 to 15 mum. The cross-linking process of the resist during post-exposure bake (PEB) was accurately monitored using Fourier transform infrared (FT-IR) spectroscopy. The infrared absorption peaks at 862, 914, 972, and 1128 cm(-1) in the spectrum of the SU-8 resist were found to be useful indicators for the completion of cross-linking in the resist. Results of the experiments showed that the cross-linking of SU-8 was optimized at the exposure dose of 800 mJ/cm(2) for resist thicknesses of 3.5, 9.5, and 15 microm. PEB temperature was set at 95 degrees C and time at 3 min. The resist thickness was measured using interference patterns in the FT-IR spectra of the resist. Test structures with an aspect ratio 3:1 on 10 microm thick SU-8 resist film were obtained using scanning electron microscopy (SEM).

Ultra-short wavelength x-ray system

DOEpatents

Umstadter, Donald [Ann Arbor, MI; He, Fei [Ann Arbor, MI; Lau, Yue-Ying [Potomac, MD

2008-01-22

A method and apparatus to generate a beam of coherent light including x-rays or XUV by colliding a high-intensity laser pulse with an electron beam that is accelerated by a synchronized laser pulse. Applications include x-ray and EUV lithography, protein structural analysis, plasma diagnostics, x-ray diffraction, crack analysis, non-destructive testing, surface science and ultrafast science.

Development of an alternating magnetic-field-assisted finishing process for microelectromechanical systems micropore x-ray optics.

PubMed

Riveros, Raul E; Yamaguchi, Hitomi; Mitsuishi, Ikuyuki; Takagi, Utako; Ezoe, Yuichiro; Kato, Fumiki; Sugiyama, Susumu; Yamasaki, Noriko; Mitsuda, Kazuhisa

2010-06-20

X-ray astronomy research is often limited by the size, weight, complexity, and cost of functioning x-ray optics. Micropore optics promises an economical alternative to traditional (e.g., glass or foil) x-ray optics; however, many manufacturing difficulties prevent micropore optics from being a viable solution. Ezoe et al. introduced microelectromechanical systems (MEMS) micropore optics having curvilinear micropores in 2008. Made by either deep reactive ion etching or x-ray lithography, electroforming, and molding (LIGA), MEMS micropore optics suffer from high micropore sidewall roughness (10-30nmrms) which, by current standards, cannot be improved. In this research, a new alternating magnetic-field-assisted finishing process was developed using a mixture of ferrofluid and microscale abrasive slurry. A machine was built, and a set of working process parameters including alternating frequency, abrasive size, and polishing time was selected. A polishing experiment on a LIGA-fabricated MEMS micropore optic was performed, and a change in micropore sidewall roughness of 9.3+/-2.5nmrms to 5.7+/-0.7nmrms was measured. An improvement in x-ray reflectance was also seen. This research shows the feasibility and confirms the effects of this new polishing process on MEMS micropore optics.

Potential Technology Transfer to the DoD Unmanned Ground Vehicle Program.

DTIC Science & Technology

1996-10-01

Germany. This process combines x-ray lithography, galvanic casting, and micromolding technology and can be used to produce a variety of sensors and...whether circulation is being obstructed by atherosclerosis . Finally, work is being done at the University of Minnesota on a microrobotic device

Advancing three-dimensional MEMS by complimentary laser micro manufacturing

NASA Astrophysics Data System (ADS)

Palmer, Jeremy A.; Williams, John D.; Lemp, Tom; Lehecka, Tom M.; Medina, Francisco; Wicker, Ryan B.

2006-01-01

This paper describes improvements that enable engineers to create three-dimensional MEMS in a variety of materials. It also provides a means for selectively adding three-dimensional, high aspect ratio features to pre-existing PMMA micro molds for subsequent LIGA processing. This complimentary method involves in situ construction of three-dimensional micro molds in a stand-alone configuration or directly adjacent to features formed by x-ray lithography. Three-dimensional micro molds are created by micro stereolithography (MSL), an additive rapid prototyping technology. Alternatively, three-dimensional features may be added by direct femtosecond laser micro machining. Parameters for optimal femtosecond laser micro machining of PMMA at 800 nanometers are presented. The technical discussion also includes strategies for enhancements in the context of material selection and post-process surface finish. This approach may lead to practical, cost-effective 3-D MEMS with the surface finish and throughput advantages of x-ray lithography. Accurate three-dimensional metal microstructures are demonstrated. Challenges remain in process planning for micro stereolithography and development of buried features following femtosecond laser micro machining.

Design survey of X-ray/XUV projection lithography systems

NASA Astrophysics Data System (ADS)

Shealy, David L.; Viswanathan, V. K.

1991-02-01

Several configurations of two- to four-multilayer mirror systems that have been proposed for use in soft-X-ray projection lithography are examined. The performance capabilities of spherical and aspherical two-mirror projection systems are compared, and a two-spherical-mirror four-reflection system that can resolve 0.1-micron features over a 10 x 10 mm field is described. It is emphasized that three-mirror systems show promise of high resolution in telescope applications, but have not been fully analyzed for projection lithography applications. It has been shown that a four-mirror aspheric system can be designed to meet the resolution requirements, but a trade-off must be made between reducing distortion below 10 microns over the field of view and increasing the modulation transfer function greater than 50 percent at spatial frequency of 5000 cycles/mm.

X ray reflection masks: Manufacturing, characterization and first tests

NASA Astrophysics Data System (ADS)

Rahn, Stephen

1992-09-01

SXPL (Soft X-ray Projection Lithography) multilayer mirrors are characterized, laterally structured and then used as reflection masks in a projecting lithography procedure. Mo/Si-multilayer mirrors with a 2d in the region of 14 nm were characterized by Cu-k(alpha) grazing incidence as well as soft X-ray normal incidence reflectivity measurements. The multilayer mirrors were patterned by reactive ion etching with CF4 using a photoresist as etch mask, thus producing X-ray reflection masks. The masks were tested at the synchrotron radiation laboratory of the electron accelerator ELSA. A double crystal X-ray monochromator was modified so as to allow about 0.5 sq cm of the reflection mask to be illuminated by white synchrotron radiation. The reflected patterns were projected (with an energy of 100 eV) onto a resist and structure sizes down to 8 micrometers were nicely reproduced. Smaller structures were distorted by Fresnel-diffraction. The theoretically calculated diffraction images agree very well with the observed images.

Multilayer on-chip stacked Fresnel zone plates: Hard x-ray fabrication and soft x-ray simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Kenan; Wojcik, Michael J.; Ocola, Leonidas E.

2015-11-01

Fresnel zone plates are widely used as x-ray nanofocusing optics. To achieve high spatial resolution combined with good focusing efficiency, high aspect ratio nanolithography is required, and one way to achieve that is through multiple e-beam lithography writing steps to achieve on-chip stacking. A two-step writing process producing 50 nm finest zone width at a zone thickness of 1.14 µm for possible hard x-ray applications is shown here. The authors also consider in simulations the case of soft x-ray focusing where the zone thickness might exceed the depth of focus. In this case, the authors compare on-chip stacking with, andmore » without, adjustment of zone positions and show that the offset zones lead to improved focusing efficiency. The simulations were carried out using a multislice propagation method employing Hankel transforms.« less

X-ray transmissive debris shield

DOEpatents

Spielman, R.B.

1996-05-21

An X-ray debris shield for use in X-ray lithography that is comprised of an X-ray window having a layer of low density foam exhibits increased longevity without a substantial increase in exposure time. The low density foam layer serves to absorb the debris emitted from the X-ray source and attenuate the shock to the window so as to reduce the chance of breakage. Because the foam is low density, the X-rays are hardly attenuated by the foam and thus the exposure time is not substantially increased.

X-ray transmissive debris shield

DOEpatents

Spielman, Rick B.

1996-01-01

An X-ray debris shield for use in X-ray lithography that is comprised of an X-ray window having a layer of low density foam exhibits increased longevity without a substantial increase in exposure time. The low density foam layer serves to absorb the debris emitted from the X-ray source and attenuate the shock to the window so as to reduce the chance of breakage. Because the foam is low density, the X-rays are hardly attenuated by the foam and thus the exposure time is not substantially increased.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

NASA Astrophysics Data System (ADS)

Wang, L.; Kirk, E.; Wäckerlin, C.; Schneider, C. W.; Hojeij, M.; Gobrecht, J.; Ekinci, Y.

2014-06-01

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Two-dimensional ultrahigh-density X-ray optical memory.

PubMed

Bezirganyan, Hakob P; Bezirganyan, Siranush E; Bezirganyan, Hayk H; Bezirganyan, Petros H

2007-01-01

Most important aspect of nanotechnology applications in the information ultrahigh storage is the miniaturization of data carrier elements of the storage media with emphasis on the long-term stability. Proposed two-dimensional ultrahigh-density X-ray optical memory, named X-ROM, with long-term stability is an information carrier basically destined for digital data archiving. X-ROM is a semiconductor wafer, in which the high-reflectivity nanosized X-ray mirrors are embedded. Data are encoded due to certain positions of the mirrors. Ultrahigh-density data recording procedure can e.g., be performed via mask-less zone-plate-array lithography (ZPAL), spatial-phase-locked electron-beam lithography (SPLEBL), or focused ion-beam lithography (FIB). X-ROM manufactured by nanolithography technique is a write-once memory useful for terabit-scale memory applications, if the surface area of the smallest recording pits is less than 100 nm2. In this case the X-ROM surface-storage capacity of a square centimetre becomes by two orders of magnitude higher than the volumetric data density really achieved for three-dimensional optical data storage medium. Digital data read-out procedure from proposed X-ROM can e.g., be performed via glancing-angle incident X-ray micro beam (GIX) using the well-developed X-ray reflectometry technique. In presented theoretical paper the crystal-analyser operating like an image magnifier is added to the set-up of X-ROM data handling system for the purpose analogous to case of application the higher numerical aperture objective in optical data read-out system. We also propose the set-up of the X-ROM readout system based on more the one incident X-ray micro beam. Presented scheme of two-beam data handling system, which operates on two mutually perpendicular well-collimated monochromatic incident X-ray micro beams, essentially increases the reliability of the digital information read-out procedure. According the graphs of characteristic functions presented in paper, one may choose optimally the incident radiation wavelength, as well as the angle of incidence of X-ray micro beams, appropriate for proposed digital data read-out procedure.

Advanced optical manufacturing and testing; Proceedings of the Meeting, San Diego, CA, July 9-11, 1990

NASA Astrophysics Data System (ADS)

Sanger, Gregory M.; Reid, Paul B.; Baker, Lionel R.

1990-11-01

Consideration is given to advanced optical fabrication, profilometry and thin films, and metrology. Particular attention is given to automation for optics manufacturing, 3D contouring on a numerically controlled grinder, laser-scanning lens configurations, a noncontact precision measurement system, novel noncontact profiler design for measuring synchrotron radiation mirrors, laser-diode technologies for in-process metrology, measurements of X-ray reflectivities of Au-coatings at several energies, platinum coating of an X-ray mirror for SR lithography, a Hilbert transform algorithm for fringe-pattern analysis, structural error sources during fabrication of the AXAF optical elements, an in-process mirror figure qualification procedure for large deformable mirrors, interferometric evaluation of lenslet arrays for 2D phase-locked laser diode sources, and manufacturing and metrology tooling for the solar-A soft X-ray telescope.

Method for fabricating beryllium-based multilayer structures

DOEpatents

Skulina, Kenneth M.; Bionta, Richard M.; Makowiecki, Daniel M.; Alford, Craig S.

2003-02-18

Beryllium-based multilayer structures and a process for fabricating beryllium-based multilayer mirrors, useful in the wavelength region greater than the beryllium K-edge (111 .ANG. or 11.1 nm). The process includes alternating sputter deposition of beryllium and a metal, typically from the fifth row of the periodic table, such as niobium (Nb), molybdenum (Mo), ruthenium (Ru), and rhodium (Rh). The process includes not only the method of sputtering the materials, but the industrial hygiene controls for safe handling of beryllium. The mirrors made in accordance with the process may be utilized in soft x-ray and extreme-ultraviolet projection lithography, which requires mirrors of high reflectivity (>60%) for x-rays in the range of 60-140 .ANG. (60-14.0 nm).

Microfabrication: LIGA-X and applications

NASA Astrophysics Data System (ADS)

Kupka, R. K.; Bouamrane, F.; Cremers, C.; Megtert, S.

2000-09-01

X-ray LIGA (Lithography, Electrogrowth, Moulding) is one of today's key technologies in microfabrication and upcoming modern (meso)-(nano) fabrication, already used and anticipated for micromechanics (micromotors, microsensors, spinnerets, etc.), micro-optics, micro-hydrodynamics (fluidic devices), microbiology, in medicine, in biology, and in chemistry for microchemical reactors. It compares to micro-electromechanical systems (MEMS) technology, offering a larger, non-silicon choice of materials and better inherent precision. X-ray LIGA relies on synchrotron radiation to obtain necessary X-ray fluxes and uses X-ray proximity printing. Inherent advantages are its extreme precision, depth of field and very low intrinsic surface roughness. However, the quality of fabricated structures often depends on secondary effects during exposure and effects like resist adhesion. UV-LIGA, relying on thick UV resists is an alternative for projects requiring less precision. Modulating the spectral properties of synchrotron radiation, different regimes of X-ray lithography lead to (a) the mass-fabrication of classical nanostructures, (b) the fabrication of high aspect ratio nanostructures (HARNST), (c) the fabrication of high aspect ratio microstructures (HARMST), and (d) the fabrication of high aspect ratio centimeter structures (HARCST). Reviewing very recent activities around X-ray LIGA, we show the versatility of the method, obviously finding its region of application there, where it is best and other competing microtechnologies are less advantageous. An example of surface-based X-ray and particle lenses (orthogonal reflection optics (ORO)) made by X-ray LIGA is given.

Development of a low-cost x-ray mask for high-aspect-ratio MEM smart structures

NASA Astrophysics Data System (ADS)

Ajmera, Pratul K.; Stadler, Stefan; Abdollahi, Neda

1998-07-01

A cost-effective process with short fabrication time for making x-ray masks for research and development purposes is described here for fabricating high-aspect ratio microelectromechanical structures using synchrotron based x- ray lithography. Microscope cover glass slides as membrane material is described. Slides with an initial thickness of 175 micrometers are etched to a thickness in the range of 10 - 25 micrometers using a diluted HF and buffered hydrofluoric acid solutions. The thinned slides are glued on supportive mask frames and sputtered with a chromium/silver sandwich layer which acts as a plating base layer for the deposition of the gold absorber. The judicial choice of glue and mask frame material are significant parameters in a successful fabrication process. Gold absorber structures are electroplated on the membrane. Calculations are done for contrast and dose ratio obtained in the photoresist after synchrotron radiation as a function of the mask design parameters. Exposure experiments are performed to prove the applicability of the fabricated x-ray mask.

Lithographic technologies that haven't (yet) made it: lessons learned (Plenary Paper)

NASA Astrophysics Data System (ADS)

Pease, R. Fabian

2005-05-01

Since the introduction of the integrated circuit we have been inventing ways to extend the feature resolution beyond the optical limit. Using a focused electron beam linewidths of less than 100nm were demonstrated in 1960 and a mere three years later we achieved a 10nm feature. In the 1970's and 80's several semiconductor manufacturers undertook programs to introduce electron beam lithography (EBL) and X-ray lithography (XRL) based primarily on the rationale that both had superior resolution. Those programs consumed many millions of dollars and yielded, and continue to yield, very imaginative systems but have failed to displace deep ultraviolet lithography (DUVL) despite its inferior resolution. One lesson learned is an old one: to displace an established technology the new must be 10x better than the old. Thus it is irrational that even today a form of XRL employing 13nm X-rays is still being pursued despite showing performance inferior to that of DUVL. What constitutes 'better' depends on the application and thus there are niche markets for forms of lithography other than DUVL. But for mainstream semiconductor chip manufacturing there is no prospect within the next decade of displacing optical lithography which can be stretched even to 10nm features by applying novel techniques coupled with massive computation.

Parametric studies and characterization measurements of x-ray lithography mask membranes

NASA Astrophysics Data System (ADS)

Wells, Gregory M.; Chen, Hector T. H.; Engelstad, Roxann L.; Palmer, Shane R.

1991-08-01

The techniques used in the experimental characterization of thin membranes are considered for their potential use as mask blanks for x-ray lithography. Among the parameters of interest for this evaluation are the film's stress, fracture strength, uniformity of thickness, absorption in the x-ray and visible spectral regions and the modulus and grain structure of the material. The experimental techniques used for measuring these properties are described. The accuracy and applicability of the assumptions used to derive the formulas that relate the experimental measurements to the parameters of interest are considered. Experimental results for silicon carbide and diamond films are provided. Another characteristic needed for an x-ray mask carrier is radiation stability. The number of x-ray exposures expected to be performed in the lifetime of an x-ray mask on a production line is on the order of 107. The dimensional stability requirements placed on the membranes during this period are discussed. Interferometric techniques that provide sufficient sensitivity for these stability measurements are described. A comparison is made between the different techniques that have been developed in term of the information that each technique provides, the accuracy of the various techniques, and the implementation issues that are involved with each technique.

Supercritical CO2 drying of poly(methyl methacrylate) photoresist for deep x-ray lithography: a brief note

NASA Astrophysics Data System (ADS)

Shukla, Rahul; Abhinandan, Lala; Sharma, Shivdutt

2017-07-01

Poly(methyl methacrylate) (PMMA) is an extensively used positive photoresist for deep x-ray lithography. The post-development release of the microstructures of PMMA becomes very critical for high aspect ratio fragile and freestanding microstructures. Release of high aspect ratio comb-drive microstructure of PMMA made by one-step x-ray lithography (OXL) is studied. The effect of low-surface tension Isopropyl alcohol (IPA) over water is investigated for release of the high aspect ratio microstructures using conventional and supercritical (SC) CO2 drying. The results of conventional drying are also compared for the samples released or dried in both in-house developed and commercial SC CO2 dryer. It is found that in all cases the microstructures of PMMA are permanently deformed and damaged while using SC CO2 for drying. For free-standing high aspect ratio microstructures of PMMA made by OXL, it is advised to use low-surface tension IPA over DI water. However, this brings a limitation on the design of the microstructure.

Objective for EUV microscopy, EUV lithography, and x-ray imaging

DOEpatents

Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

2016-05-03

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

Foundry Microfabrication of Deformable Mirrors for Adaptive Optics

DTIC Science & Technology

1998-04-28

radians) of deflection. The 25% amplitude modulation of the piston array is due to constructive and destructive interference of light reflecting off the...34 Lithographie Galvanoformung und Abformung" is frequently applied to these plating processes. In the LIGA process synchrotron x-ray radiation is used to... interference because the support structures were metallized. In addition, only 61 mirror elements were controlled. Two approaches to improved

The measurement capabilities of cross-sectional profile of Nanoimprint template pattern using small angle x-ray scattering

NASA Astrophysics Data System (ADS)

Yamanaka, Eiji; Taniguchi, Rikiya; Itoh, Masamitsu; Omote, Kazuhiko; Ito, Yoshiyasu; Ogata, Kiyoshi; Hayashi, Naoya

2016-05-01

Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost. High resolution of NIL will be determined by a high definition template. Nanoimprint lithography will faithfully transfer the pattern of NIL template to the wafer. Cross-sectional profile of the template pattern will greatly affect the resist profile on the wafer. Therefore, the management of the cross-sectional profile is essential. Grazing incidence small angle x-ray scattering (GI-SAXS) technique has been proposed as one of the method for measuring cross-sectional profile of periodic nanostructure pattern. Incident x-rays are irradiated to the sample surface with very low glancing angle. It is close to the critical angle of the total reflection of the x-ray. The scattered x-rays from the surface structure are detected on a two-dimensional detector. The observed intensity is discrete in the horizontal (2θ) direction. It is due to the periodicity of the structure, and diffraction is observed only when the diffraction condition is satisfied. In the vertical (β) direction, the diffraction intensity pattern shows interference fringes reflected to height and shape of the structure. Features of the measurement using x-ray are that the optical constant for the materials are well known, and it is possible to calculate a specific diffraction intensity pattern based on a certain model of the cross-sectional profile. The surface structure is estimated by to collate the calculated diffraction intensity pattern that sequentially while changing the model parameters with the measured diffraction intensity pattern. Furthermore, GI-SAXS technique can be measured an object in a non-destructive. It suggests the potential to be an effective tool for product quality assurance. We have developed a cross-sectional profile measurement of quartz template pattern using GI-SAXS technique. In this report, we will report the measurement capabilities of GI-SAXS technique as a cross-sectional profile measurement tool of NIL quartz template pattern.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography.

PubMed

Wang, L; Kirk, E; Wäckerlin, C; Schneider, C W; Hojeij, M; Gobrecht, J; Ekinci, Y

2014-06-13

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Design of a normal incidence multilayer imaging X-ray microscope

NASA Astrophysics Data System (ADS)

Shealy, David L.; Gabardi, David R.; Hoover, Richard B.; Walker, Arthur B. C., Jr.; Lindblom, Joakim F.

Normal incidence multilayer Cassegrain X-ray telescopes were flown on the Stanford/MSFC Rocket X-ray Spectroheliograph. These instruments produced high spatial resolution images of the sun and conclusively demonstrated that doubly reflecting multilayer X-ray optical systems are feasible. The images indicated that aplanatic imaging soft X-ray/EUV microscopes should be achievable using multilayer optics technology. A doubly reflecting normal incidence multilayer imaging X-ray microscope based on the Schwarzschild configuration has been designed. The design of the microscope and the results of the optical system ray trace analysis are discussed. High resolution aplanatic imaging X-ray microscopes using normal incidence multilayer X-ray mirrors should have many important applications in advanced X-ray astronomical instrumentation, X-ray lithography, biological, biomedical, metallurgical, and laser fusion research.

ESH assessment of advanced lithography materials and processes

NASA Astrophysics Data System (ADS)

Worth, Walter F.; Mallela, Ram

2004-05-01

The ESH Technology group at International SEMATECH is conducting environment, safety, and health (ESH) assessments in collaboration with the lithography technologists evaluating the performance of an increasing number of new materials and technologies being considered for advanced lithography such as 157nm photresist and extreme ultraviolet (EUV). By performing data searches for 75 critical data types, emissions characterizations, and industrial hygiene (IH) monitoring during the use of the resist candidates, it has been shown that the best performing resist formulations, so far, appear to be free of potential ESH concerns. The ESH assessment of the EUV lithography tool that is being developed for SEMATECH has identified several features of the tool that are of ESH concern: high energy consumption, poor energy conversion efficiency, tool complexity, potential ergonomic and safety interlock issues, use of high powered laser(s), generation of ionizing radiation (soft X-rays), need for adequate shielding, and characterization of the debris formed by the extreme temperature of the plasma. By bringing these ESH challenges to the attention of the technologists and tool designers, it is hoped that the processes and tools can be made more ESH friendly.

Focusing properties of x-ray polymer refractive lenses from SU-8 resist layer

NASA Astrophysics Data System (ADS)

Snigirev, Anatoly A.; Snigireva, Irina; Drakopoulos, Michael; Nazmov, Vladimir; Reznikova, Elena; Kuznetsov, Sergey; Grigoriev, Maxim; Mohr, Jurgen; Saile, Volker

2003-12-01

Compound refractive lenses printed in Al and Be are becoming the key X-ray focusing and imaging components of beamline optical layouts at the 3rd generation synchrotron radiation sources. Recently proposed planar optical elements based on Si, diamond etc. may substantially broaden the spectrum of the refractive optics applicability. Planar optics has focal distances ranging from millimeters to tens of meters offering nano- and micro-focusing lenses, as well as beam condensers and collimators. Here we promote deep X-ray lithography and LIGA-type techniques to create high aspect-ratio lens structures for different optical geometries. Planar X-ray refractive lenses were manufactured in 1 mm thick SU-8 negative resist layer by means of deep synchrotron radiation lithography. The focusing properties of lenses were studied at ID18F and BM5 beamlines at the ESRF using monochromatic radiation in the energy range of 10 - 25 keV. By optimizing lens layout, mask making and resist processing, lenses of good quality were fabricated. The resolution of about 270 nm (FWHM) with gain in the order of 300 was measured at 14 keV. In-line holography of B-fiber was realized in imaging and projection mode with a magnification of 3 and 20, respectively. Submicron features of the fiber were clearly resolved. A radiation stability test proved that the fabricated lenses don't change focusing characteristics after dose of absorbed X-ray radiation of about 2 MJ/cm3. The unique radiation stability along with the high effficiency of SU8 lenses opens wide range of their synchrotron radiation applications such as microfocusing elements, condensers and collimators.

Polymer X-ray refractive nano-lenses fabricated by additive technology.

PubMed

Petrov, A K; Bessonov, V O; Abrashitova, K A; Kokareva, N G; Safronov, K R; Barannikov, A A; Ershov, P A; Klimova, N B; Lyatun, I I; Yunkin, V A; Polikarpov, M; Snigireva, I; Fedyanin, A A; Snigirev, A

2017-06-26

The present work demonstrates the potential applicability of additive manufacturing to X-Ray refractive nano-lenses. A compound refractive lens with a radius of 5 µm was produced by the two-photon polymerization induced lithography. It was successfully tested at the X-ray microfocus laboratory source and a focal spot of 5 μm was measured. An amorphous nature of polymer material combined with the potential of additive technologies may result in a significantly enhanced focusing performance compared to the best examples of modern X-ray compound refractive lenses.

Demonstration of Laser Plasma X-Ray Source with X-Ray Collimator Final Report CRADA No. TC-1564-99

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lane, S. M.; Forber, R. A.

2017-09-28

This collaborative effort between the University of California, Lawrence Livermore National Laboratory (LLNL) and JMAR Research, Inc. (JRI), was to demonstrate that LLNL x-ray collimators can effectively increase the wafer throughput of JRI's laser based x-ray lithography systems. The technical objectives were expected to be achieved by completion of the following tasks, which are separated into two task lists by funding source. The organization (LLNL or JMAR) having primary responsibility is given parenthetically for each task.

Refractive Optics for Hard X-ray Transmission Microscopy

NASA Astrophysics Data System (ADS)

Simon, M.; Ahrens, G.; Last, A.; Mohr, J.; Nazmov, V.; Reznikova, E.; Voigt, A.

2011-09-01

For hard x-ray transmission microscopy at photon energies higher than 15 keV we design refractive condenser and imaging elements to be used with synchrotron light sources as well as with x-ray tube sources. The condenser lenses are optimized for low x-ray attenuation—resulting in apertures greater than 1 mm—and homogeneous intensity distribution on the detector plane, whereas the imaging enables high-resolution (<100 nm) full-field imaging. To obtain high image quality at reasonable exposure times, custom-tailored matched pairs of condenser and imaging lenses are being developed. The imaging lenses (compound refractive lenses, CRLs) are made of SU-8 negative resist by deep x-ray lithography. SU-8 shows high radiation stability. The fabrication technique enables high-quality lens structures regarding surface roughness and arrangement precision with arbitrary 2D geometry. To provide point foci, crossed pairs of lenses are used. Condenser lenses have been made utilizing deep x-ray lithographic patterning of thick SU-8 layers, too, whereas in this case, the aperture is limited due to process restrictions. Thus, in terms of large apertures, condenser lenses made of structured and rolled polyimide film are more attractive. Both condenser types, x-ray mosaic lenses and rolled x-ray prism lenses (RXPLs), are considered to be implemented into a microscope setup. The x-ray optical elements mentioned above are characterized with synchrotron radiation and x-ray laboratory sources, respectively.

A large format membrane-based x-ray mask for microfluidic chip fabrication

NASA Astrophysics Data System (ADS)

Wang, Lin; Zhang, Min; Desta, Yohannes; Melzak, J.; Wu, C. H.; Peng, Zhengchun

2006-02-01

X-ray lithography is a very good option for the fabrication of micro-devices especially when high aspect ratio patterns are required. Membrane-based x-ray masks are commonly used for high-resolution x-ray lithography. A thin layer of silicon nitride (Si3N4) or silicon carbide (SiC) film (1-2 µm) is normally used as the membrane material for x-ray mask fabrication (Wells G M, Reilly M, Nachman R, Cerrina F, El-Khakani M A and Chaker M 1993 Mater. Res. Soc. Conf. Proc. 306 81-9 Shoki T, Nagasawa H, Kosuga H, Yamaguchi Y, Annaka N, Amemiya I and Nagarekawa O 1993 SPIE Proc. 1924 450-6). The freestanding membrane window of an x-ray mask, which defines the exposing area of the x-ray mask, can be obtained by etching a pre-defined area on a silicon wafer from the backside (Wang L, Desta Y, Fettig R K, Goettert J, Hein H, Jakobs P and Chulz J 2004 J. Micromech. Microeng. 14 722-6). Usually, the window size of an x-ray mask is around 20 × 20 mm because of the low tensile stress of the membrane (10-100 MPa), and the larger window dimension of an x-ray mask may cause the deformation of membranes and lower the mask quality. However, x-ray masks with larger windows are preferred for micro-device fabrication in order to increase the productivity. We analyzed the factors which influence the flatness of large format x-ray masks and fabricated x-ray masks with a window size of 55 × 55 mm and 46 × 65 mm on 1 µm thick membranes by increasing the tensile stress of the membranes (>300 MPa) and optimizing the stress of the absorber layer. The large format x-ray mask was successfully applied for the fabrication of microfluidic chips.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, N.M.; Markle, D.A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies. 7 figs.

Maskless, reticle-free, lithography

DOEpatents

Ceglio, Natale M.; Markle, David A.

1997-11-25

A lithography system in which the mask or reticle, which usually carries the pattern to be printed onto a substrate, is replaced by a programmable array of binary (i.e. on/off) light valves or switches which can be programmed to replicate a portion of the pattern each time an illuminating light source is flashed. The pattern of light produced by the programmable array is imaged onto a lithographic substrate which is mounted on a scanning stage as is common in optical lithography. The stage motion and the pattern of light displayed by the programmable array are precisely synchronized with the flashing illumination system so that each flash accurately positions the image of the pattern on the substrate. This is achieved by advancing the pattern held in the programmable array by an amount which corresponds to the travel of the substrate stage each time the light source flashes. In this manner the image is built up of multiple flashes and an isolated defect in the array will only have a small effect on the printed pattern. The method includes projection lithographies using radiation other than optical or ultraviolet light. The programmable array of binary switches would be used to control extreme ultraviolet (EUV), x-ray, or electron, illumination systems, obviating the need for stable, defect free masks for projection EUV, x-ray, or electron, lithographies.

VETA-I x ray test analysis

NASA Technical Reports Server (NTRS)

Brissenden, R. J. V.; Chartas, G.; Freeman, M. D.; Hughes, J. P.; Kellogg, E. M.; Podgorski, W. A.; Schwartz, D. A.; Zhao, P.

1992-01-01

This interim report presents some definitive results from our analysis of the VETA-I x-ray testing data. It also provides a description of the hardware and software used in the conduct of the VETA-I x-ray test program performed at the MSFC x-ray Calibration Facility (XRCF). These test results also serve to supply data and information to include in the TRW final report required by DPD 692, DR XC04. To provide an authoritative compendium of results, we have taken nine papers as published in the SPIE Symposium, 'Grazing Incidence X-ray/EUV Optics for Astronomy and Projection Lithography' and have reproduced them as the content of this report.

Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

NASA Technical Reports Server (NTRS)

Hartley, F.; Malek, C.; Neogi, J.

2001-01-01

The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths.

PubMed

Mojarad, Nassir; Fan, Daniel; Gobrecht, Jens; Ekinci, Yasin

2014-04-15

Manufacturing efficient and broadband optics is of high technological importance for various applications in all wavelength regimes. Particularly in the extreme ultraviolet and soft x-ray spectra, this becomes challenging due to the involved atomic absorption edges that rapidly change the optical constants in these ranges. Here we demonstrate a new interference lithography grating mask that can be used for nanopatterning in this spectral range. We demonstrate photolithography with cutting-edge resolution at 6.5 and 13.5 nm wavelengths, relevant to the semiconductor industry, as well as using 2.5 and 4.5 nm wavelength for patterning thick photoresists and fabricating high-aspect-ratio metal nanostructures for plasmonics and sensing applications.

Point Source X-Ray Lithography System for Sub-0.15 Micron Design Rules

DTIC Science & Technology

1998-05-22

consist of a SAL developed stepper, an SRL developed Dense Plasma Focus , (DPF), X-Ray source, and a CXrL developed beam line. The system will be...existing machine that used spark gap switching, SRL has developed an all solid state driver and improved head electrode assembly for their dense plasma ... focus X-Ray source. Likewise, SAL has used their existing Model 4 stepper installed at CXrL as a design starting point, and has developed an advanced

Development of broadband X-ray interference lithography large area exposure system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Chaofan; Wu, Yanqing, E-mail: wuyanqing@sinap.ac.cn, E-mail: zhaojun@sinap.ac.cn, E-mail: tairenzhong@sinap.ac.cn; Zhu, Fangyuan

2016-04-15

The single-exposure patterned area is about several 10{sup 2} × 10{sup 2} μm{sup 2} which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several squaremore » centimeters and even bigger by this technology.« less

Observation and theory of X-ray mirages

PubMed Central

Magnitskiy, Sergey; Nagorskiy, Nikolay; Faenov, Anatoly; Pikuz, Tatiana; Tanaka, Mamoko; Ishino, Masahiko; Nishikino, Masaharu; Fukuda, Yuji; Kando, Masaki; Kawachi, Tetsuya; Kato, Yoshiaki

2013-01-01

The advent of X-ray lasers allowed the realization of compact coherent soft X-ray sources, thus opening the way to a wide range of applications. Here we report the observation of unexpected concentric rings in the far-field beam profile at the output of a two-stage plasma-based X-ray laser, which can be considered as the first manifestation of a mirage phenomenon in X-rays. We have developed a method of solving the Maxwell–Bloch equations for this problem, and find that the experimentally observed phenomenon is due to the emergence of X-ray mirages in the plasma amplifier, appearing as phase-matched coherent virtual point sources. The obtained results bring a new insight into the physical nature of amplification of X-ray radiation in laser-induced plasma amplifiers and open additional opportunities for X-ray plasma diagnostics and extreme ultraviolet lithography. PMID:23733009

Observation and theory of X-ray mirages.

PubMed

Magnitskiy, Sergey; Nagorskiy, Nikolay; Faenov, Anatoly; Pikuz, Tatiana; Tanaka, Mamoko; Ishino, Masahiko; Nishikino, Masaharu; Fukuda, Yuji; Kando, Masaki; Kawachi, Tetsuya; Kato, Yoshiaki

2013-01-01

The advent of X-ray lasers allowed the realization of compact coherent soft X-ray sources, thus opening the way to a wide range of applications. Here we report the observation of unexpected concentric rings in the far-field beam profile at the output of a two-stage plasma-based X-ray laser, which can be considered as the first manifestation of a mirage phenomenon in X-rays. We have developed a method of solving the Maxwell-Bloch equations for this problem, and find that the experimentally observed phenomenon is due to the emergence of X-ray mirages in the plasma amplifier, appearing as phase-matched coherent virtual point sources. The obtained results bring a new insight into the physical nature of amplification of X-ray radiation in laser-induced plasma amplifiers and open additional opportunities for X-ray plasma diagnostics and extreme ultraviolet lithography.

X-ray Full Field Microscopy at 30 keV

NASA Astrophysics Data System (ADS)

Marschall, F.; Last, A.; Simon, M.; Kluge, M.; Nazmov, V.; Vogt, H.; Ogurreck, M.; Greving, I.; Mohr, J.

2014-04-01

In our X-ray full field microscopy experiments, we demonstrated a resolution better than 260 nm over the entire field of view of 80 μm × 80 μm at 30 keV. Our experimental setup at PETRA III, P05, had a length of about 5 m consisting of an illumination optics, an imaging lens and a detector. For imaging, we used a compound refractive lens (CLR) consisting of mr-L negative photo resist, which was fabricated by deep X-ray lithography. As illumination optics, we choose a refractive rolled X-ray prism lens, which was adapted to the numerical aperture of the imaging lens.

Optical microspectrometer

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2004-05-25

An optical microspectrometer comprises a grism to disperse the spectra in a line object. A single optical microspectrometer can be used to sequentially scan a planar object, such as a dye-tagged microchip. Because the optical microspectrometer is very compact, multiple optical microspectrometers can be arrayed to provide simultaneous readout across the width of the planar object The optical microspectrometer can be fabricated with lithographic process, such as deep X-ray lithography (DXRL), with as few as two perpendicular exposures.

Three Dimensional Transient Analysis of Microstrip Circuits in Multilayered Anisotropic Media

DTIC Science & Technology

1991-11-14

dimensions, resonance is possible within the low gigahertz frequency range. Because the effects of diffraction during proximity-print x-ray lithography ...facilitate lead passage. The simulation results, comparing radi- paksgo and sourcl ation from a gasketed and ungasketed heatsink with an dMD TPI as... lithography are of critical importance, a number of previous researchers have attempted to calculate the diffraction patterns and minimum achievable

Parabolic crossed planar polymeric x-ray lenses

NASA Astrophysics Data System (ADS)

Nazmov, V.; Reznikova, E.; Mohr, J.; Saile, V.; Vincze, L.; Vekemans, B.; Bohic, S.; Somogyi, A.

2011-01-01

The principles of design and manufacturing of the polymer planar x-ray lenses focusing in one and two directions, as well as the peculiarities of optical behaviors and the results of the lens test are reported in this paper. The methods of electron and deep x-ray lithography used in lens manufacturing allow the manufacture of ten or more x-ray lenses on one substrate; the lenses show focal lengths down to several centimeters for photon energies between 5 and 40 keV. The measured focus size was 105 nm for a linear lens with an intensity gain of about 407, and 300 × 770 nm for a crossed lens with an intensity gain of 6470.

Radiation hardness of molybdenum silicon multilayers designed for use in a soft-x-ray projection lithography system.

PubMed

Gaines, D P; Spitzer, R C; Ceglio, N M; Krumrey, M; Ulm, G

1993-12-01

A molybdenum silicon multilayer is irradiated with 13.4-nm radiation to investigate changes in multilayer performance under simulated soft-x-ray projection lithography (SXPL) conditions. The wiggler-undulator at the Berlin electron storage ring BESSY is used as a quasi-monochromatic source of calculable spectral radiant intensity and is configured to simulate an incident SXPL x-ray spectrum. The test multilayer receives a radiant exposure of 240 J/mm(2) in an exposure lasting 8.9 h. The corresponding average incident power density is 7.5 mW/mm(2). The absorbed dose of 7.8 × 10(10) J/kg (7.8 × 10(12) rad) is equivalent to 1.2 times the dose that would be absorbed by a multilayer coating on the first imaging optic in a hypothetical SXPL system during 1 year of operation. Surface temperature increases do not exceed 2 °C during the exposure. Normal-incidence reflectance measurements at λ(0) = 13.4 nm performed before radiation exposure are in agreement with measurements performed after the exposure, indicating that no sign icant damage had occurred.

Enhanced light extraction of scintillator using large-area photonic crystal structures fabricated by soft-X-ray interference lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zhichao; Wu, Shuang; Liu, Bo, E-mail: lbo@tongji.edu.cn

2015-06-15

Soft-X-ray interference lithography is utilized in combination with atomic layer deposition to prepare photonic crystal structures on the surface of Bi{sub 4}Ge{sub 3}O{sub 12} (BGO) scintillator in order to extract the light otherwise trapped in the internal of scintillator due to total internal reflection. An enhancement with wavelength- and emergence angle-integration by 95.1% has been achieved. This method is advantageous to fabricate photonic crystal structures with large-area and high-index-contrast which enable a high-efficient coupling of evanescent field and the photonic crystal structures. Generally, the method demonstrated in this work is also suitable for many other light emitting devices where amore » large-area is required in the practical applications.« less

Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oyama, Tomoko Gowa, E-mail: ohyama.tomoko@qst.go.jp; Oshima, Akihiro; Tagawa, Seiichi, E-mail: tagawa@sanken.osaka-u.ac.jp

2016-08-15

It is a challenge to obtain sufficient extreme ultraviolet (EUV) exposure time for fundamental research on developing a new class of high sensitivity resists for extreme ultraviolet lithography (EUVL) because there are few EUV exposure tools that are very expensive. In this paper, we introduce an easy method for predicting EUV resist sensitivity by using conventional electron beam (EB) sources. If the chemical reactions induced by two ionizing sources (EB and EUV) are the same, the required absorbed energies corresponding to each required exposure dose (sensitivity) for the EB and EUV would be almost equivalent. Based on this theory, wemore » calculated the resist sensitivities for the EUV/soft X-ray region. The estimated sensitivities were found to be comparable to the experimentally obtained sensitivities. It was concluded that EB is a very useful exposure tool that accelerates the development of new resists and sensitivity enhancement processes for 13.5 nm EUVL and 6.x nm beyond-EUVL (BEUVL).« less

Fabrication, patterning and luminescence properties of X 2-Y 2SiO 5:A (A=Eu 3+, Tb 3+, Ce 3+) phosphor films via sol-gel soft lithography

NASA Astrophysics Data System (ADS)

Han, X. M.; Lin, J.; Fu, J.; Xing, R. B.; Yu, M.; Zhou, Y. H.; Pang, M. L.

2004-04-01

X 2-Y 2SiO 5:A (A=Eu 3+, Tb 3+, Ce 3+) phosphor films and their patterning were fabricated by a sol-gel process combined with a soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) optical microscopy and photoluminescence (PL) were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 900 °C with X 1-Y 2SiO 5, which transformed completely to X 2-Y 2SiO 5 at 1250 °C. Patterned thin films with different band widths (5 μm spaced by 5 μm and 16 μm spaced by 24 μm) were obtained by a soft lithography technique (micromoulding in capillaries, MIMIC). The SEM and AFM study revealed that the nonpatterned phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 nm. The doped rare earth ions (A) showed their characteristic emissions in X 2-Y 2SiO 5 phosphor films, i.e., 5D 0- 7F J ( J=0,1,2,3,4) for Eu 3+, 5D 3, 4- 7F J ( J=6,5,4,3) for Tb 3+ and 5d ( 2D)-4f ( 2F 2/5, 2/7) for Ce 3+, respectively. The optimum doping concentrations for Eu 3+, Tb 3+ were determined to be 13 and 8 mol% of Y 3+ in X 2-Y 2SiO 5 films, respectively.

Plasma X-Ray Sources for Lithography

DTIC Science & Technology

1980-05-12

in evaluating various plasma sources. In addition, a brief analysis is given of three devices, or systems, used to produce such plasmas: the electron beam- sliding spark, the dense plasma focus and the laser produced plasma.

Debris-free soft x-ray source with gas-puff target

NASA Astrophysics Data System (ADS)

Ni, Qiliang; Chen, Bo; Gong, Yan; Cao, Jianlin; Lin, Jingquan; Lee, Hongyan

2001-12-01

We have been developing a debris-free laser plasma light source with a gas-puff target system whose nozzle is driven by a piezoelectric crystal membrane. The gas-puff target system can utilize gases such as CO2, O2 or some gas mixture according to different experiments. Therefore, in comparison with soft X-ray source using a metal target, after continuously several-hour laser interaction with gas from the gas-puff target system, no evidences show that the light source can produce debris. The debris-free soft X-ray source is prepared for soft X-ray projection lithography research at State Key Laboratory of Applied Optics. Strong emission from CO2, O2 and Kr plasma is observed.

Design and Analysis of an Optical Interface Message Processor

DTIC Science & Technology

1993-03-01

Device 16 2.2.15 Microchannel Spatial Light Modulator (MSLM) 16 2.2.16 Si/PLST Modulator 16 2.2.17 Deformable Mirror Device ( DMD ) 17 2.2.18 Charged...wavelength of UV light, ’n this process, is the minimum image which can be developed. X-Ray lithography wil’ reduce the image size to the 1000 Angstrom...resonance of laser wavelength. This is due to a change in the index of refraction which results in an optical path allowing constructive interference

Design and analysis of aspherical multilayer imaging X-ray microscope

NASA Technical Reports Server (NTRS)

Shealy, David L.; Jiang, WU; Hoover, Richard B.

1991-01-01

Spherical Schwarzschild microscopes for soft X-ray applications in microscopy and projection lithography employ two concentric spherical mirrors that are configured such that the third-order spherical aberration and coma are zero. Based on incoherent, sine-wave MTF calculations, the object-plane resolution of a magnification-factor-20 microscope is presently analyzed as a function of object height and numerical aperture of the primary for several spherical Schwarzschild, conic, and aspherical two-mirror microscope configurations.

Picosecond excimer laser-plasma x-ray source for microscopy, biochemistry, and lithography

NASA Astrophysics Data System (ADS)

Turcu, I. C. Edmond; Ross, Ian N.; Trenda, P.; Wharton, C. W.; Meldrum, R. A.; Daido, Hiroyuki; Schulz, M. S.; Fluck, P.; Michette, Alan G.; Juna, A. P.; Maldonado, Juan R.; Shields, Harry; Tallents, Gregory J.; Dwivedi, L.; Krishnan, J.; Stevens, D. L.; Jenner, T.; Batani, Dimitri; Goodson, H.

1994-02-01

At Rutherford Appleton Laboratory we developed a high repetition rate, picosecond, excimer laser system which generates a high temperature and density plasma source emitting approximately 200 mW (78 mW/sr) x ray average power at h(nu) approximately 1.2 KeV or 0.28 KeV < h(nu) < 0.53 KeV (the `water window'). At 3.37 nm wavelength the spectral brightness of the source is approximately 9 X 1011 photons/s/mm2/mrad2/0.1% bandwidth. The x-ray source serves a large user community for applications such as: scanning and holographic microscopy, the study of the biochemistry of DNA damage and repair, microlithography and spectroscopy.

Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

NASA Astrophysics Data System (ADS)

Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

2015-01-01

To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

The DARPA compact superconducting x-ray lithography source features. [Defense Advanced Research Projects Agency (DARPA)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heese, R.; Kalsi, S.; Leung, E.

1991-01-01

Under DARPA sponsorship, a compact Superconducting X-ray Lithography Source (SXLS) is being designed and built by the Brookhaven National Laboratory (BNL) with industry participation from Grumman Corporation and General Dynamics. This source is optimized for lithography work for sub-micron high density computer chips, and is about the size of a billiard table (1.5 m {times} 4.0 m). The machine has a racetrack configuration with two 180{degree} bending magnets being designed and built by General Dynamics under a subcontract with Grumman Corporation. The machine will have 18 photon ports which would deliver light peaked at a wave length of 10 Angstroms.more » Grumman is commercializing the SXLS device and plans to book orders for delivery of industrialized SXLS (ISXLS) versions in 1995. This paper will describe the major features of this device. The commercial machine will be equipped with a fully automated user-friendly control systems, major features of which are already working on a compact warm dipole ring at BNL. This ring has normal dipole magnets with dimensions identical to the SXLS device, and has been successfully commissioned. 4 figs., 1 tab.« less

Lattice properties of the Phase I BNL x-ray lithography source obtained from fits to magnetic measurement data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumberg, L.N.; Murphy, J.B.; Reusch, M.F.

1991-01-01

The orbit, tune, chromaticity and {beta} values for the Phase 1 XLS ring were computed by numerical integration of equations of motion using fields obtained from the coefficients of the 3-dimensional solution of Laplace's Equation evaluated by fits to magnetic measurements. The results are in good agreement with available data. The method has been extended to higher order fits of TOSCA generated fields in planes normal to the reference axis using the coil configuration proposed for the Superconducting X-Ray Lithography Source. Agreement with results from numerical integration through fields given directly by TOSCA is excellent. The formulation of the normalmore » multipole expansion presented by Brown and Servranckx has been extended to include skew multipole terms. The method appears appropriate for analysis of magnetic measurements of the SXLS. 8 refs. , 2 figs., 2 tabs.« less

High throughput fabrication of large-area plasmonic color filters by soft-X-ray interference lithography.

PubMed

Sun, Libin; Hu, Xiaolin; Wu, Qingjun; Wang, Liansheng; Zhao, Jun; Yang, Shumin; Tai, Renzhong; Fecht, Hans-Jorg; Zhang, Dong-Xian; Wang, Li-Qiang; Jiang, Jian-Zhong

2016-08-22

Plasmonic color filters in mass production have been restricted from current fabrication technology, which impede their applications. Soft-X-ray interference lithography (XIL) has recently generated considerable interest as a newly developed technique for the production of periodic nano-structures with resolution theoretically below 4 nm. Here we ameliorate XIL by adding an order sorting aperture and designing the light path properly to achieve perfect-stitching nano-patterns and fast fabrication of large-area color filters. The fill factor of nanostructures prepared on ultrathin Ag films can largely affect the transmission minimum of plasmonic color filters. By changing the fill factor, the color can be controlled flexibly, improving the utilization efficiency of the mask in XIL simultaneously. The calculated data agree well with the experimental results. Finally, an underlying mechanism has been uncovered after systematically analyzing the localized surface plasmon polaritons (LSPPs) coupling in electric field distribution.

Evaluating structure in thin block copolymer films with soft x-rays (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sunday, Daniel; Liman, Christopher; Hannon, Adam F.; Ren, Jiaxing; Chen, Xuanxuan; Suh, Hyo Seon; de Pablo, Juan J.; Nealey, Paul F.; Kline, R. Joseph

2017-03-01

The semiconductor industry is evaluating a variety of approaches for the cost efficient production of future processing and memory generations. Amongst the technologies being explored are multiple patterning steps, extreme ultraviolet (EUV) lithography, multiple-beam electron beam lithography and the directed self-assembly (DSA) of block copolymers (BCPs). BCP DSA utilizes a chemical or topographical template to induce long range order in a thin film of BCP which enhances the resolution of the original pattern. The characterization of buried structure within a DSA BCP film is challenging due to the lack of contrast between the organic materials. Critical-dimension small angle x-ray scattering (CDSAXS) measurements were performed on DSA BCP films, using soft X-rays to tune the contrast, in order to understand the relationship between template structure and film morphology.1 The results of these measurements show that as the width of the guiding stripe widens the arrangement of the BCP on the guiding stripe inverts, shifting from the A block being centered on the guiding stripe to the B block being centered on the guiding stripe. The initial results of integration of mean field simulations into the analysis of scattering data will also be discussed. In addition to examining the BCP structure with CDSAXS, soft X-ray reflectivity2 measurements were performed on BCP to better understand the relationship between interface width for systems with alternative architectures (triblocks) and additives (polymers/ionic liquids). The addition of a selectively associating additive increases the interaction parameter between the two blocks, resulting in the reduction of the interface width and access to smaller pitches. The use of soft X-ray reflectivity allows the evaluation of the distribution of the additive. (1) Sunday, D. F.; Hammond, M. R.; Wang, C.; Wu, W.; Delongchamp, D. M.; Tjio, M.; Cheng, J. Y.; Kline, R. J.; Pitera, J. W. Determination of the Internal Morphology of Nanostructures Patterned by Directed Self Assembly. ACS Nano 2014, 8, 8426-8437. (2) Sunday, D. F.; Kline, R. J. Reducing Block Copolymer Interfacial Widths through Polymer Additives. Macromolecules 2015, 48, 679-686.

Design of a normal incidence multilayer imaging x-ray microscope.

PubMed

Shealy, D L; Gabardi, D R; Hoover, R B; Walker, A B; Lindblom, J F; Barbee, T W

1989-01-01

Normal incidence multilayer Cassegrain x-ray telescopes were flown on the Stanford/MSFC Rocket X-Ray Spectroheliograph. These instruments produced high spatial resolution images of the Sun and conclusively demonstrated that doubly reflecting multilayer x-ray optical systems are feasible. The images indicated that aplanatic imaging soft x-ray /EUV microscopes should be achievable using multilayer optics technology. We have designed a doubly reflecting normal incidence multilayer imaging x-ray microscope based on the Schwarzschild configuration. The Schwarzschild microscope utilizes two spherical mirrors with concentric radii of curvature which are chosen such that the third-order spherical aberration and coma are minimized. We discuss the design of the microscope and the results of the optical system ray trace analysis which indicates that diffraction-limited performance with 600 Å spatial resolution should be obtainable over a 1 mm field of view at a wavelength of 100 Å. Fabrication of several imaging soft x-ray microscopes based upon these designs, for use in conjunction with x-ray telescopes and laser fusion research, is now in progress. High resolution aplanatic imaging x-ray microscopes using normal incidence multilayer x-ray mirrors should have many important applications in advanced x-ray astronomical instrumentation, x-ray lithography, biological, biomedical, metallurgical, and laser fusion research.

High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting interferometry

NASA Astrophysics Data System (ADS)

Hansen, Matthew E.; Cerrina, Franco

1994-05-01

A high-sensitivity holographic and interferometric metrology developed at the Center for X- ray Lithography (CXrL) has been employed to investigate in-plane distortions (IPD) produced in x-ray mask materials. This metrology has been applied to characterize damage to x-ray mask materials exposed to synchrotron radiation. X-ray mask damage and accelerated mask damage studies on silicon nitride and silicon carbide were conducted on the Aladdin ES-1 and ES-2 beamline exposure stations, respectively. Accumulated in-plane distortions due to x-ray irradiation were extracted from the incremental interferometric phase maps to yield IPD vs. dose curves for silicon nitride mask blanks. Silicon carbide mask blanks were subjected to accelerated mask damage in the high flux 2 mm X 2 mm beam of the ES-2 exposure station. An accelerated damage study of silicon carbide has shown no in-plane distortion for an accumulated dose of 800 kJ/cm2 with a measurement sensitivity of less than 5 nm.

Soft X-ray holographic grating beam splitter including a double frequency grating for interferometer pre-alignment.

PubMed

Liu, Ying; Tan, Xin; Liu, Zhengkun; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

2008-09-15

Grating beam splitters have been fabricated for soft X-ray Mach- Zehnder interferometer using holographic interference lithography. The grating beam splitter consists of two gratings, one works at X-ray laser wavelength of 13.9 nm with the spatial frequency of 1000 lines/mm as the operation grating, the other works at visible wavelength of 632.8 nm for pre-aligning the X-ray interferometer with the spatial frequency of 22 lines/mm as the pre-alignment grating. The two gratings lie vertically on the same substrate. The main feature of the beam splitter is the use of low-spatial- frequency beat grating of a holographic double frequency grating as the pre-alignment grating of the X-ray interferometer. The grating line parallelism between the two gratings can be judged by observing the diffraction patterns of the pre-alignment grating directly.

X-ray lithography masking

NASA Technical Reports Server (NTRS)

Smith, Henry I. (Inventor); Lim, Michael (Inventor); Carter, James (Inventor); Schattenburg, Mark (Inventor)

1998-01-01

X-ray masking apparatus includes a frame having a supporting rim surrounding an x-ray transparent region, a thin membrane of hard inorganic x-ray transparent material attached at its periphery to the supporting rim covering the x-ray transparent region and a layer of x-ray opaque material on the thin membrane inside the x-ray transparent region arranged in a pattern to selectively transmit x-ray energy entering the x-ray transparent region through the membrane to a predetermined image plane separated from the layer by the thin membrane. A method of making the masking apparatus includes depositing back and front layers of hard inorganic x-ray transparent material on front and back surfaces of a substrate, depositing back and front layers of reinforcing material on the back and front layers, respectively, of the hard inorganic x-ray transparent material, removing the material including at least a portion of the substrate and the back layers of an inside region adjacent to the front layer of hard inorganic x-ray transparent material, removing a portion of the front layer of reinforcing material opposite the inside region to expose the surface of the front layer of hard inorganic x-ray transparent material separated from the inside region by the latter front layer, and depositing a layer of x-ray opaque material on the surface of the latter front layer adjacent to the inside region.

X-ray lithography using holographic images

DOEpatents

Howells, M.S.; Jacobsen, C.

1997-03-18

Methods for forming X-ray images having 0.25 {micro}m minimum line widths on X-ray sensitive material are presented. A holographic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate. In this second embodiment, an X-ray beam with a high degree of monochromaticity and spatial coherence is required. 15 figs.

X-ray lithography using holographic images

DOEpatents

Howells, Malcolm S.; Jacobsen, Chris

1997-01-01

Methods for forming X-ray images having 0.25 .mu.m minimum line widths on X-ray sensitive material are presented. A holgraphic image of a desired circuit pattern is projected onto a wafer or other image-receiving substrate to allow recording of the desired image in photoresist material. In one embodiment, the method uses on-axis transmission and provides a high flux X-ray source having modest monochromaticity and coherence requirements. A layer of light-sensitive photoresist material on a wafer with a selected surface is provided to receive the image(s). The hologram has variable optical thickness and variable associated optical phase angle and amplitude attenuation for transmission of the X-rays. A second embodiment uses off-axis holography. The wafer receives the holographic image by grazing incidence reflection from a hologram printed on a flat metal or other highly reflecting surface or substrate. In this second embodiment, an X-ray beam with a high degree of monochromaticity and spatial coherence is required.

Microfluidic-based photocatalytic microreactor for environmental application: a review of fabrication substrates and techniques, and operating parameters.

PubMed

Das, Susmita; Srivastava, Vimal Chandra

2016-06-08

Photochemical technology with microfluidics is emerging as a new platform in environmental science. Microfluidic technology has various advantages, like better mixing and a shorter diffusion distance for the reactants and products; and uniform distribution of light on the photocatalyst. Depending on the material type and related applications, several fabrication techniques have been adopted by various researchers. Microreactors have been prepared by various techniques, such as lithography, etching, mechanical microcutting technology, etc. Lithography can be classified into photolithography, soft lithography and X-ray lithography techniques whereas the etching process is divided into wet etching (chemical etching) and dry etching (plasma etching) techniques. Several substrates, like polymers, such as polydimethyl-siloxane (PDMS), polymethyle-methacrylate (PMMA), hydrogel, etc.; metals, such as stainless steel, titanium foil, etc.; glass, such as silica capillary, glass slide, etc.; and ceramics have been used for microchannel fabrication. During degradation in a microreactor, the degradation efficiency is affected by few important parameters such as flow rate, initial concentration of the target compound, microreactor dimensions, light intensity, photocatalyst structure and catalyst support. The present paper discusses and critically reviews fabrication techniques and substrates used for microchannel fabrication and critical operating parameters for organics, especially dye degradation in the microreactor. The kinetics of degradation has also been discussed.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications.

PubMed

Bi, Kaixi; Xiang, Quan; Chen, Yiqin; Shi, Huimin; Li, Zhiqin; Lin, Jun; Zhang, Yongzhe; Wan, Qiang; Zhang, Guanhua; Qin, Shiqiao; Zhang, Xueao; Duan, Huigao

2017-11-09

We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes using copper naphthenate as a high-resolution negative-tone resist. As a commonly used industrial painting product, copper naphthenate is extremely cheap with a long shelf time but demonstrates an unexpected patterning resolution better than 10 nm. With appropriate annealing under a hydrogen atmosphere, the produced graphene@copper composite patterns show high conductivity of ∼400 S cm -1 . X-ray diffraction, conformal Raman spectroscopy and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the final patterns. With the properties of high resolution and high conductivity, the patterned graphene@copper composites could be used as conductive pads and interconnects for graphene electronic devices with ohmic contacts. Compared to common fabrication processes involving metal evaporation and lift-off steps, this pattern-transfer-free fabrication process using copper naphthenate resist is direct and simple but allows comparable device performance in practical device applications.

Canadian Semiconductor Technology Conference, 6th, Ottawa, Canada, Aug. 11-13, 1992, Proceedings

NASA Astrophysics Data System (ADS)

Baribeau, Jean-Marc

1992-11-01

This volume contains papers on the growth efficiency and distribution coefficient of GaInP-InP epilayers and heterostructures, X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100), and mechanical properties of silicon carbide films for X-ray lithography application. Attention is also given to fine structure in Raman spectroscopy and X-ray reflectometry and its uses for the characterization of superlattices, phase formation in Fe-Si thin-film diffusion couples, process optimization for a micromachined silicon nonreverse valve, and a numerical study of heat transport in thermally isolated flow-rate microsensors. Particular consideration is given to a versatile 2D model for InGaAsP quantum-well semiconductor lasers, gallium arsenide electronics in the marketplace, and optical channel grading in p-type Si/SiGe MOSFETs. Other papers are on ultrafast electron tunneling in a reverse-biased high-efficiency quantum well laser structure, excess currents as a result of trap-assisted tunneling in double-barrier resonant tunneling diodes, and carrier lifetimes in strained InGaAsP multiple quantum-well laser structures.

Applications of Coherent Radiation from Electrons traversing Crystals

NASA Astrophysics Data System (ADS)

Überall, H.

2000-04-01

Historically, the first types of coherent radiation from electrons traversing crystals studied were coherent bremsstrahlung (CB: Dyson and Überall 1955; Überall 1956, 1962) and channeling radiation (CR: Kumakhov, 1976) which produce quasimonochromatic X-rays and γ-rays, as well as parametric X-rays (Baryshevsky and Feranchuk, 1983). Related non-crystal sources are transition radiation and synchrotron radiation. We here present a comparison of radiation types from these sources, and we discuss a series of their possible applications, namely (a) CR: X-ray lithography, angiography, structure analysis of macromolecules, and trace element analysis, and (b) for CB: Radiography, use as a neutron source, elemental analysis, radiation therapy, and radioisotope production for commercial or medical use. CR and CB are very intense sources, needing only low-energy, moderately-priced electron linacs for their generation, hence competing with (or surpassing) more conventional X-ray sources intensity-wise and from a cost standpoint.

Fabrication of 3D polymer photonic crystals for near-IR applications

NASA Astrophysics Data System (ADS)

Yao, Peng; Qiu, Liang; Shi, Shouyuan; Schneider, Garrett J.; Prather, Dennis W.; Sharkawy, Ahmed; Kelmelis, Eric

2008-02-01

Photonic crystals[1, 2] have stirred enormous research interest and became a growing enterprise in the last 15 years. Generally, PhCs consist of periodic structures that possess periodicity comparable with the wavelength that the PhCs are designed to modulate. If material and periodic pattern are properly selected, PhCs can be applied to many applications based on their unique properties, including photonic band gaps (PBG)[3], self-collimation[4], super prism[5], etc. Strictly speaking, PhCs need to possess periodicity in three dimensions to maximize their advantageous capabilities. However, many current research is based on scaled two-dimensional PhCs, mainly due to the difficulty of fabrication such three-dimensional PhCs. Many approaches have been explored for the fabrication of 3D photonic crystals, including layer-by-layer surface micromachining[6], glancing angle deposition[7], 3D micro-sculpture method[8], self-assembly[9] and lithographical methods[10-12]. Among them, lithographic methods became increasingly accepted due to low costs and precise control over the photonic crystal structure. There are three mostly developed lithographical methods, namely X-ray lithography[10], holographic lithography[11] and two-photon polymerization[12]. Although significant progress has been made in developing these lithography-based technologies, these approaches still suffer from significant disadvantages. X-ray lithography relies on an expensive radiation source. Holographic lithography lacks the flexibility to create engineered defects, and multi-photon polymerization is not suitable for parallel fabrication. In our previous work, we developed a multi-layer photolithography processes[13, 14] that is based on multiple resist application and enhanced absorption upon exposure. Using a negative lift-off resist (LOR) and 254nm DUV source, we have demonstrated fabrication of 3D arbitrary structures with feature size of several microns. However, severe intermixing problem occurred as we reduced the lattice constant for near-IR applications. In this work, we address this problem by employing SU8. The exposure is vertically confined by using a mismatched 220nm DUV source. Intermixing problem is eliminated due to more densely crosslinked resist molecules. Using this method, we have demonstrated 3D "woodpile" structure with 1.55μm lattice constant and a 2mm-by-2mm pattern area.

Ag-Cu mixed phase plasmonic nanostructures fabricated by shadow nanosphere lithography and glancing angle co-deposition

NASA Astrophysics Data System (ADS)

Ingram, Whitney; Larson, Steven; Carlson, Daniel; Zhao, Yiping

2017-01-01

By combining shadow nanosphere lithography with a glancing angle co-deposition technique, mixed-phase Ag-Cu triangular nanopatterns and films were fabricated. They were prepared at different compositions with respect to Ag from 100% to 0% by changing the relative deposition ratio of each metal. Characterizations by ellipsometry, energy dispersive x-ray spectroscopy, and x-ray diffraction revealed that the thin films and nanopatterns were composed of small, well-mixed Ag and Cu nano-grains with a diameter less than 20 nm, and their optical properties could be described by an effective medium theory. All compositions of the nanopattern had the same shape, but showed tunable localized surface plasmon resonance (LSPR) properties. In general, the LSPR of the nanopatterns redshifted with decreasing composition. Such a relation could be fitted by an empirical model based on the bulk theory of alloy plasmonics. By changing the colloidal template and the material deposited, this fabrication technique can be used to produce other alloy plasmonic nanostructures with predicted LSPR wavelengths.

Ag-Cu mixed phase plasmonic nanostructures fabricated by shadow nanosphere lithography and glancing angle co-deposition.

PubMed

Ingram, Whitney; Larson, Steven; Carlson, Daniel; Zhao, Yiping

2017-01-06

By combining shadow nanosphere lithography with a glancing angle co-deposition technique, mixed-phase Ag-Cu triangular nanopatterns and films were fabricated. They were prepared at different compositions with respect to Ag from 100% to 0% by changing the relative deposition ratio of each metal. Characterizations by ellipsometry, energy dispersive x-ray spectroscopy, and x-ray diffraction revealed that the thin films and nanopatterns were composed of small, well-mixed Ag and Cu nano-grains with a diameter less than 20 nm, and their optical properties could be described by an effective medium theory. All compositions of the nanopattern had the same shape, but showed tunable localized surface plasmon resonance (LSPR) properties. In general, the LSPR of the nanopatterns redshifted with decreasing composition. Such a relation could be fitted by an empirical model based on the bulk theory of alloy plasmonics. By changing the colloidal template and the material deposited, this fabrication technique can be used to produce other alloy plasmonic nanostructures with predicted LSPR wavelengths.

Soft X-Ray Projection Lithography. Organization of the Photonics Science Topical Meetings Held in Monterey, California on May 10-12, 1993

DTIC Science & Technology

1993-05-10

00 pm MA3 Two aspheric mirror system design development MB2 Condenser optics for SXPL, Steve Vernon. Vernon Ap- for SXPL, T. E Jewell. Optical Design...Consultant A generalized plied Physics, Gary Sommargren. Lynn Seppala. David Gaines, procedure for an optical design of a two aspheric mirror system...necessary to develop high-rollectance, tionat Laboratories: J. E, B3jorkhotm. R. R. Freeman, M. 0. Himet, normaltýincidence x-ray mirrors tar projection

X ray microscope assembly and alignment support and advanced x ray microscope design and analysis

NASA Technical Reports Server (NTRS)

Shealy, David L.

1991-01-01

Considerable efforts have been devoted recently to the design, analysis, fabrication, and testing of spherical Schwarzschild microscopes for soft x ray application in microscopy and projection lithography. The spherical Schwarzschild microscope consists of two concentric spherical mirrors configured such that the third order spherical aberration and coma are zero. Since multilayers are used on the mirror substrates for x ray applications, it is desirable to have only two reflecting surfaces in a microscope. In order to reduce microscope aberrations and increase the field of view, generalized mirror surface profiles have been considered in this investigation. Based on incoherent and sine wave modulation transfer function (MTF) calculations, the object plane resolution of a microscope has been analyzed as a function of the object height and numerical aperture (NA) of the primary for several spherical Schwarzschild, conic, and aspherical head reflecting two mirror microscope configurations.

Direct index of refraction measurements at extreme-ultraviolet and soft-x-ray wavelengths.

PubMed

Rosfjord, Kristine; Chang, Chang; Miyakawa, Ryan; Barth, Holly; Attwood, David

2006-03-10

Coherent radiation from undulator beamlines has been used to directly measure the real and imaginary parts of the index of refraction of several materials at both extreme-ultraviolet and soft-x-ray wavelengths. Using the XOR interferometer, we measure the refractive indices of silicon and ruthenium, essential materials for extreme-ultraviolet lithography. Both materials are tested at wavelength (13.4 nm) and across silicon's L2 (99.8 eV) and L3 (99.2 eV) absorption edges. We further extend this direct phase measurement method into the soft-x-ray region, where measurements of chromium and vanadium are performed around their L3 absorption edges at 574.1 and 512.1 eV, respectively. These are the first direct measurements, to our knowledge, of the real part of the index of refraction made in the soft-x-ray region.

Fabrication of high-resolution x-ray diffractive optics at King's College London

NASA Astrophysics Data System (ADS)

Charalambous, Pambos S.; Anastasi, Peter A. F.; Burge, Ronald E.; Popova, Katia

1995-09-01

The fabrication of high resolution x-ray diffractive optics, and Fresnel zone plates (ZPs) in particular, is a very demanding multifaceted technological task. The commissioning of more (and brighter) synchrotron radiation sources, has increased the number of x-ray imaging beam lines world wide. The availability of cheaper and more effective laboratory x-ray sources, has further increased the number of laboratories involved in x-ray imaging. The result is an ever increasing demand for x-ray optics with a very wide range of specifications, reflecting the particular type of x-ray imaging performed at different laboratories. We have been involved in all aspects of high resolution nanofabrication for a number of years, and we have explored many different methods of lithography, which, although unorthodox, open up possibilities, and increase our flexibility for the fabrication of different diffractive optical elements, as well as other types of nanostructures. The availability of brighter x-ray sources, means that the diffraction efficiency of the ZPs is becoming of secondary importance, a trend which will continue in the future. Resolution, however, is important and will always remain so. Resolution is directly related to the accuracy af pattern generation, as well as the ability to draw fine lines. This is the area towards which we have directed most of our efforts so far.

Micro- and nanofabrication methods in nanotechnological medical and pharmaceutical devices

PubMed Central

Betancourt, Tania; Brannon-Peppas, Lisa

2006-01-01

Micro- and nanofabrication techniques have revolutionized the pharmaceutical and medical fields as they offer the possibility for highly reproducible mass-fabrication of systems with complex geometries and functionalities, including novel drug delivery systems and bionsensors. The principal micro- and nanofabrication techniques are described, including photolithography, soft lithography, film deposition, etching, bonding, molecular self assembly, electrically induced nanopatterning, rapid prototyping, and electron, X-ray, colloidal monolayer, and focused ion beam lithography. Application of these techniques for the fabrication of drug delivery and biosensing systems including injectable, implantable, transdermal, and mucoadhesive devices is described. PMID:17722281

Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks

NASA Astrophysics Data System (ADS)

Marumoto, Kenji; Aya, Sunao; Yabe, Hedeki; Okada, Tatsunori; Sumitani, Hiroaki

2012-04-01

Membrane-based photomask is used in proximity X-ray lithography including that in LIGA (Lithographie, Galvanoformung und Abformung) process, and near-field photolithography. In this article, out-of-plane deformation (OPD) and in-plane displacement (IPD) of membrane-based photomask blanks are theoretically analyzed to obtain the mask blanks with flat front surface and low stress absorber film. First, we derived the equations of OPD and IPD for the processing steps of membrane-based photomask such as film deposition, back-etching and bonding, using a theory of symmetrical bending of circular plates with a coaxial circular hole and that of deformation of cylinder under hydrostatic pressure. The validity of the equations was proved by comparing the calculation results with experimental ones. Using these equations, we investigated the relation between the geometry of the mask blanks and the distortions generally, and gave the criterion to attain the flat front surface. Moreover, the absorber stress-bias required to obtain zero-stress on finished mask blanks was also calculated and it has been found that only little stress-bias was required for adequate hole size of support plate.

Precision non-contact polishing tool

DOEpatents

Taylor, John S.

1997-01-01

A non-contact polishing tool that combines two orthogonal slurry flow geometries to provide flexibility in altering the shape of the removal footprint. By varying the relative contributions of the two flow geometries, the footprint shape can be varied between the characteristic shapes corresponding to the two independent flow regimes. In addition, the tool can include a pressure activated means by which the shape of the brim of the tool can be varied. The tool can be utilized in various applications, such as x-ray optical surfaces, x-ray lithography, lenses, etc., where stringent shape and finish tolerances are required.

Precision non-contact polishing tool

DOEpatents

Taylor, J.S.

1997-01-07

A non-contact polishing tool is disclosed that combines two orthogonal slurry flow geometries to provide flexibility in altering the shape of the removal footprint. By varying the relative contributions of the two flow geometries, the footprint shape can be varied between the characteristic shapes corresponding to the two independent flow regimes. In addition, the tool can include a pressure activated means by which the shape of the brim of the tool can be varied. The tool can be utilized in various applications, such as x-ray optical surfaces, x-ray lithography, lenses, etc., where stringent shape and finish tolerances are required. 5 figs.

Atomic layer deposition frequency-multiplied Fresnel zone plates for hard x-rays focusing

DOE PAGES

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun; ...

2017-12-01

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Fabrication and testing of an electrochemical microcell for in situ soft X-ray microspectroscopy measurements

NASA Astrophysics Data System (ADS)

Gianoncelli, A.; Kaulich, B.; Kiskinova, M.; Mele, C.; Prasciolu, M.; Sgura, I.; Bozzini, B.

2013-03-01

In this paper we report on the fabrication and testing of a novel concept of electrochemical microcell for in-situ soft X-ray microspectroscopy in transmission. The microcell, fabricated by electron-beam lithography, implements an improved electrode design, with optimal current density distribution and minimised ohmic drop, allowing the same three-electrode electrochemical control achievable with traditional cells. Moreover standard electroanalytical measurements, such as cyclic voltammetry, can be routinely performed. As far as the electrolyte is concerned, we selected a room-temperature ionic-liquid. Some of the materials belonging to this class, in addition to a broad range of outstanding electrochemical properties, feature two highlights that are crucial for in situ, soft X-ray transmission work: spinnability, enabling accurate thickness control, and stability to UHV, allowing operation of an open cell in the analysis chamber vacuum (10-6 mbar). The cell can, of course, be used also with non-vacuum stable electrolytes in the sealed version developed in previous work in our group. In this study, the microcell designed, fabricated and tested in situ by applying an anodic polarisation to a Au electrode and following the formation of a distribution of corrosion features. This specific material combination presented in this work does not limit the cell concept, that can implement any electrodic material grown by lithography, any liquid electrolyte and any spinnable solid electrolyte.

Beam line BL11 for LIGA process at the NewSUBARU

NASA Astrophysics Data System (ADS)

Mekaru, Harutaka; Utsumi, Yuichi; Hattori, Tadashi

2001-07-01

A beam line BL11 is constructed for exposure Hard X-ray Lithography (HXL) in the LIGA (German acronym for Lithographite Galvanoformung and Abformung) process at the synchrotron radiation (SR) facility NewSUBARU of the Laboratory of Advanced Science and Technology for Industry (LASTI) in Himeji Institute of Technology (HIT). This beam line was designed by the criteria; photon energy range 4-6 keV, a beam spot size on the exposure stage ⩾60×5 mm 2, a density of total irradiated photons ⩾10 11 photons/cm 2. The PMMA sheet etching was successfully demonstrated by using the output beam. We conclude that this beam line performs sufficiently well to study the exposure of HXL in the LIGA process.

Low cost, high performance, self-aligning miniature optical systems

PubMed Central

Kester, Robert T.; Christenson, Todd; Kortum, Rebecca Richards; Tkaczyk, Tomasz S.

2009-01-01

The most expensive aspects in producing high quality miniature optical systems are the component costs and long assembly process. A new approach for fabricating these systems that reduces both aspects through the implementation of self-aligning LIGA (German acronym for lithographie, galvanoformung, abformung, or x-ray lithography, electroplating, and molding) optomechanics with high volume plastic injection molded and off-the-shelf glass optics is presented. This zero alignment strategy has been incorporated into a miniature high numerical aperture (NA = 1.0W) microscope objective for a fiber confocal reflectance microscope. Tight alignment tolerances of less than 10 μm are maintained for all components that reside inside of a small 9 gauge diameter hypodermic tubing. A prototype system has been tested using the slanted edge modulation transfer function technique and demonstrated to have a Strehl ratio of 0.71. This universal technology is now being developed for smaller, needle-sized imaging systems and other portable point-of-care diagnostic instruments. PMID:19543344

Patterning and photoluminescent properties of perovskite-type organic/inorganic hybrid luminescent films by soft lithography

NASA Astrophysics Data System (ADS)

Cheng, Z. Y.; Wang, Z.; Xing, R. B.; Han, Y. C.; Lin, J.

2003-07-01

Perovskite-type organic/inorganic hybrid layered compound (C 6H 5C 2H 4NH 3) 2PbI 4 was synthesized. The patterning of (C 6H 5C 2H 4NH 3) 2PbI 4 thin films on silicon substrate was realized by the micromolding in capillaries (MIMIC) process, a kind of soft lithography. Bright green luminescent stripes with different widths (50, 15, 0.8 μm) have been obtained. The structure and optical properties of (C 6H 5C 2H 4NH 3) 2PbI 4 films were characterized by X-ray diffraction (XRD), UV/Vis absorption and photoluminescence excitation and emission spectra, respectively. It is shown that the organic-inorganic layered (C 6H 5C 2H 4NH 3) 2PbI 4 film was c-axis oriented, paralleling to the substrate plane. Green exciton emission at 525 nm was observed in the film, and the explanations for it were given.

Performance summary on a high power dense plasma focus x-ray lithography point source producing 70 nm line features in AlGaAs microcircuits

NASA Astrophysics Data System (ADS)

Petr, Rodney; Bykanov, Alexander; Freshman, Jay; Reilly, Dennis; Mangano, Joseph; Roche, Maureen; Dickenson, Jason; Burte, Mitchell; Heaton, John

2004-08-01

A high average power dense plasma focus (DPF), x-ray point source has been used to produce ˜70 nm line features in AlGaAs-based monolithic millimeter-wave integrated circuits (MMICs). The DPF source has produced up to 12 J per pulse of x-ray energy into 4π steradians at ˜1 keV effective wavelength in ˜2 Torr neon at pulse repetition rates up to 60 Hz, with an effective x-ray yield efficiency of ˜0.8%. Plasma temperature and electron concentration are estimated from the x-ray spectrum to be ˜170 eV and ˜5.1019 cm-3, respectively. The x-ray point source utilizes solid-state pulse power technology to extend the operating lifetime of electrodes and insulators in the DPF discharge. By eliminating current reversals in the DPF head, an anode electrode has demonstrated a lifetime of more than 5 million shots. The x-ray point source has also been operated continuously for 8 h run times at 27 Hz average pulse recurrent frequency. Measurements of shock waves produced by the plasma discharge indicate that overpressure pulses must be attenuated before a collimator can be integrated with the DPF point source.

Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

NASA Astrophysics Data System (ADS)

Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping; Sun, Hong; Huang, Nan

2013-10-01

The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO2 substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO2, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

State-of-the-art Nanofabrication in Catalysis.

PubMed

Karim, Waiz; Tschupp, Simon A; Herranz, Juan; Schmidt, Thomas J; Ekinci, Yasin; van Bokhovenac, Jeroen A

2017-04-26

We present recent developments in top-down nanofabrication that have found application in catalysis research. To unravel the complexity of catalytic systems, the design and use of models with control of size, morphology, shape and inter-particle distances is a necessity. The study of well-defined and ordered nanoparticles on a support contributes to the understanding of complex phenomena that govern reactions in heterogeneous and electro-catalysis. We review the strengths and limitations of different nanolithography methods such as electron beam lithography (EBL), photolithography, extreme ultraviolet (EUV) lithography and colloidal lithography for the creation of such highly tunable catalytic model systems and their applications in catalysis. Innovative strategies have enabled particle sizes reaching dimensions below 10 nm. It is now possible to create pairs of particles with distance controlled with an extremely high precision in the order of one nanometer. We discuss our approach to study these model systems at the single-particle level using X-ray absorption spectroscopy and show new ways to fabricate arrays of single nanoparticles or nanoparticles in pairs over a large area using EBL and EUV-achromatic Talbot lithography. These advancements have provided new insights into the active sites in metal catalysts and enhanced the understanding of the role of inter-particle interactions and catalyst supports, such as in the phenomenon of hydrogen spillover. We present a perspective on future directions for employing top-down nanofabrication in heterogeneous and electrocatalysis. The rapid development in nanofabrication and characterization methods will continue to have an impact on understanding of complex catalytic processes.

Microfluidic Chips for In Situ Crystal X-ray Diffraction and In Situ Dynamic Light Scattering for Serial Crystallography.

PubMed

Gicquel, Yannig; Schubert, Robin; Kapis, Svetlana; Bourenkov, Gleb; Schneider, Thomas; Perbandt, Markus; Betzel, Christian; Chapman, Henry N; Heymann, Michael

2018-04-24

This protocol describes fabricating microfluidic devices with low X-ray background optimized for goniometer based fixed target serial crystallography. The devices are patterned from epoxy glue using soft lithography and are suitable for in situ X-ray diffraction experiments at room temperature. The sample wells are lidded on both sides with polymeric polyimide foil windows that allow diffraction data collection with low X-ray background. This fabrication method is undemanding and inexpensive. After the sourcing of a SU-8 master wafer, all fabrication can be completed outside of a cleanroom in a typical research lab environment. The chip design and fabrication protocol utilize capillary valving to microfluidically split an aqueous reaction into defined nanoliter sized droplets. This loading mechanism avoids the sample loss from channel dead-volume and can easily be performed manually without using pumps or other equipment for fluid actuation. We describe how isolated nanoliter sized drops of protein solution can be monitored in situ by dynamic light scattering to control protein crystal nucleation and growth. After suitable crystals are grown, complete X-ray diffraction datasets can be collected using goniometer based in situ fixed target serial X-ray crystallography at room temperature. The protocol provides custom scripts to process diffraction datasets using a suite of software tools to solve and refine the protein crystal structure. This approach avoids the artefacts possibly induced during cryo-preservation or manual crystal handling in conventional crystallography experiments. We present and compare three protein structures that were solved using small crystals with dimensions of approximately 10-20 µm grown in chip. By crystallizing and diffracting in situ, handling and hence mechanical disturbances of fragile crystals is minimized. The protocol details how to fabricate a custom X-ray transparent microfluidic chip suitable for in situ serial crystallography. As almost every crystal can be used for diffraction data collection, these microfluidic chips are a very efficient crystal delivery method.

Microactuator production via high aspect ratio, high edge acuity metal fabrication technology

NASA Technical Reports Server (NTRS)

Guckel, H.; Christenson, T. R.

1993-01-01

LIGA is a procession sequence which uses x-ray lithography on photoresist layers of several hundred micrometers to produce very high edge acuity photopolymer molds. These plastic molds can be converted to metal molds via electroplating of many different metals and alloys. The end results are high edge acuity metal parts with large structural heights. The LIGA process as originally described by W. Ehrfeld can be extended by adding a surface micromachining phase to produce precision metal parts which can be assembled to form three-dimensional micromechanisms. This process, SLIGA, has been used to fabricate a dynamometer on a chip. The instrument has been fully implemented and will be applied to tribology issues, speed-torque characterization of planar magnetic micromotors and a new family of sensors.

High-energy radiation and polymers: A review of commercial processes and emerging applications

NASA Astrophysics Data System (ADS)

Clough, R. L.

2001-12-01

Ionizing radiation has been found to be widely applicable in modifying the structure and properties of polymers, and can be used to tailor the performance of either bulk materials or surfaces. Fifty years of research in polymer radiation chemistry has led to numerous applications of commercial and economic importance, and work remains active in the application of radiation to practical uses involving polymeric materials. This paper provides a survey of radiation-processing methods of industrial interest, ranging from technologies already commercially well established, through innovations in the active R&D stage which show exceptional promise for future commercial use. Radiation-processing technologies are discussed under the following categories: cross-linking of plastics and rubbers, curing of coatings and inks, heat-shrink products, fiber-matrix composites, chain-scission for processing control, surface modification, grafting, hydrogels, sterilization, natural product enhancement, plastics recycling, ceramic precursors, electronic property materials, ion-track membranes and lithography for microdevice production. In addition to new technological innovations utilizing conventional gamma and e-beam sources, a number of promising new applications make use of novel radiation types which include ion beams (heavy ions, light ions, highly focused microscopic beams and high-intensity pulses), soft X-rays which are focused, coherent X-rays (from a synchrotron) and e-beams which undergo scattering to generate patterns.

Active membrane masks for improved overlay performance in proximity lithography

NASA Astrophysics Data System (ADS)

Huston, Dryver R.; Plumpton, James; Esser, Brian; Sullivan, Gerald A.

2004-07-01

Membrane masks are thin (2 micron x 35 mm x 35 mm) structures that carry the master exposure patterns in proximity (X-ray) lithography. With the continuous drive to the printing of ever-finer features in microelectronics, the reduction of mask-wafer overlay positioning errors by passive rigid body positioning and passive stress control in the mask becomes impractical due to nano and sub-micron scale elastic deformations in the membrane mask. This paper describes the design, mechanics and performance of a system for actively stretching a membrane mask in-plane to control overlay distortion. The method uses thermoelectric heating/cooling elements placed on the mask perimeter. The thermoelectric elements cause controlled thermoelastic deformations in the supporting wafer, which in turn corrects distortions in the membrane mask. Silicon carbide masks are the focus of this study, but the method is believed to be applicable to other mask materials, such as diamond. Experimental and numerical results will be presented, as well as a discussion of the design issues and related design decisions.

MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

NASA Astrophysics Data System (ADS)

Park, Yeonjoon

The advanced semiconductor material InGaAsN was grown with nitrogen plasma assisted Molecular Beam Epitaxy (MBE). The InGaAsN layers were characterized with High Resolution X-ray Diffraction (HRXDF), Atomic Fore Microscope (AFM), X-ray Photoemission Spectroscopy (XPS) and Photo-Luminescence (PL). The reduction of the band gap energy was observed with the incorporation of nitrogen and the lattice matched condition to the GaAs substrate was achieved with the additional incorporation of indium. A detailed investigation was made for the growth mode changes from planar layer-by-layer growth to 3D faceted growth with a higher concentration of nitrogen. A new X-ray diffraction analysis was developed and applied to the MBE growth on GaAs(111)B, which is one of the facet planes of InGaAsN. As an effort to enhance the processing tools for advanced semiconductor materials, gas assisted Focused Ion Beam (FIB) vertical milling was performed on GaN. The FIB processed area shows an atomically flat surface, which is good enough for the fabrication of Double Bragg Reflector (DBR) mirrors for the Blue GaN Vertical Cavity Surface Emitting Laser (VCSEL) Diodes. An in-situ electron beam system was developed to combine the enhanced lithographic processing capability with the atomic layer growth capability by MBE. The electron beam system has a compensation capability against substrate vibration and thermal drift. In-situ electron beam lithography was performed with the low pressure assisting gas. The advanced processing and characterization methods developed in this thesis will assist the development of superior semiconductor materials for the future.

High brightness--multiple beamlets source for patterned X-ray production

DOEpatents

Leung, Ka-Ngo [Hercules, CA; Ji, Qing [Albany, CA; Barletta, William A [Oakland, CA; Jiang, Ximan [El Cerrito, CA; Ji, Lili [Albany, CA

2009-10-27

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 .mu.m, with inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bitter, M; Hill, K W; Scott, S

This paper consists of two parts: Part I describes the working principle of a recently developed x-ray imaging crystal spectrometer, where the astigmatism of spherically bent crystals is being used with advantage to record spatially resolved spectra of highly charged ions for Doppler measurements of the ion-temperature and toroidal plasmarotation- velocity profiles in tokamak plasmas. This type of spectrometer was thoroughly tested on NSTX and Alcator C-Mod, and its concept was recently adopted for the design of the ITER crystal spectrometers. Part II describes imaging schemes, where the astigmatism has been eliminated by the use of matched pairs of sphericallymore » bent crystals or reflectors. These imaging schemes are applicable over a wide range of the electromagnetic radiation, which includes microwaves, visible light, EUV radiation, and x-rays. Potential applications with EUV radiation and x-rays are the diagnosis of laserproduced plasmas, imaging of biological samples with synchrotron radiation, and lithography.« less

Colloidal lithography nanostructured Pd/PdO x core-shell sensor for ppb level H2S detection.

PubMed

Benedict, Samatha; Lumdee, Chatdanai; Dmitriev, Alexandre; Anand, Srinivasan; Bhat, Navakanta

2018-06-22

In this work we report on plasma oxidation of palladium (Pd) to form reliable palladium/palladium oxide (Pd/PdO x ) core-shell sensor for ppb level H 2 S detection and its performance improvement through nanostructuring using hole-mask colloidal lithography (HCL). The plasma oxidation parameters and the sensor operating conditions are optimized to arrive at a sensor device with high sensitivity and repeatable response for H 2 S. The plasma oxidized palladium/palladium oxide sensor shows a response of 43.1% at 3 ppm H 2 S at the optimum operating temperature of 200 °C with response and recovery times of 24 s and 155 s, respectively. The limit of detection (LoD) of the plasma oxidised beam is 10 ppb. We further integrate HCL, a bottom-up and cost-effective process, to create nanodiscs of fixed diameter of 100 nm and varying heights (10, 15 and 20 nm) on 10 nm thin Pd beam which is subsequently plasma oxidized to improve the H 2 S sensing characteristics. The nanostructured Pd/PdO x sensor with nanodiscs of 100 nm diameter and 10 nm height shows an enhancement in sensing performance by 11.8% at same operating temperature and gas concentration. This nanostructured sensor also shows faster response and recovery times (15 s and 100 s, respectively) compared to the unstructured Pd/PdO x counterpart together with an experimental LoD of 10 ppb and the estimated limit going all the way down to 2 ppb. Material characterization of the fabricated Pd/PdO x sensors is done using UV-vis spectroscopy and x-ray photoemission spectroscopy.

Colloidal lithography nanostructured Pd/PdO x core–shell sensor for ppb level H2S detection

NASA Astrophysics Data System (ADS)

Benedict, Samatha; Lumdee, Chatdanai; Dmitriev, Alexandre; Anand, Srinivasan; Bhat, Navakanta

2018-06-01

In this work we report on plasma oxidation of palladium (Pd) to form reliable palladium/palladium oxide (Pd/PdO x ) core–shell sensor for ppb level H2S detection and its performance improvement through nanostructuring using hole-mask colloidal lithography (HCL). The plasma oxidation parameters and the sensor operating conditions are optimized to arrive at a sensor device with high sensitivity and repeatable response for H2S. The plasma oxidized palladium/palladium oxide sensor shows a response of 43.1% at 3 ppm H2S at the optimum operating temperature of 200 °C with response and recovery times of 24 s and 155 s, respectively. The limit of detection (LoD) of the plasma oxidised beam is 10 ppb. We further integrate HCL, a bottom-up and cost-effective process, to create nanodiscs of fixed diameter of 100 nm and varying heights (10, 15 and 20 nm) on 10 nm thin Pd beam which is subsequently plasma oxidized to improve the H2S sensing characteristics. The nanostructured Pd/PdO x sensor with nanodiscs of 100 nm diameter and 10 nm height shows an enhancement in sensing performance by 11.8% at same operating temperature and gas concentration. This nanostructured sensor also shows faster response and recovery times (15 s and 100 s, respectively) compared to the unstructured Pd/PdO x counterpart together with an experimental LoD of 10 ppb and the estimated limit going all the way down to 2 ppb. Material characterization of the fabricated Pd/PdO x sensors is done using UV–vis spectroscopy and x-ray photoemission spectroscopy.

Patterned media towards Nano-bit magnetic recording: fabrication and challenges.

PubMed

Sbiaa, Rachid; Piramanayagam, Seidikkurippu N

2007-01-01

During the past decade, magnetic recording density of HDD has doubled almost every 18 months. To keep increasing the recording density, there is a need to make the small bits thermally stable. The most recent method using perpendicular recording media (PMR) will lose its fuel in a few years time and alternatives are sought. Patterned media, where the bits are magnetically separated from each other, offer the possibility to solve many issues encountered by PMR technology. However, implementation of patterned media would involve developing processing methods which offer high resolution (small bits), regular patterns, and high density. All these need to be achieved without sacrificing a high throughput and low cost. In this article, we review some of the ideas that have been proposed in this subject. However, the focus of the paper is on nano-imprint lithography (NIL) as it fulfills most of the needs of HDD as compared to conventional lithography using electron beam, EUV or X-Rays. The latest development of NIL and related technologies and their future prospects for patterned media are also discussed.

Limiting factors in the production of deep microstructures

NASA Astrophysics Data System (ADS)

Tolfree, David W. L.; O'Neill, William; Tunna, Leslie; Sutcliffe, Christopher

1999-10-01

Microsystems increasingly require precision deep microstructures that can be cost-effectively designed and manufactured. New products must be able to meet the demands of the rapidly growing markets for microfluidic, micro- optical and micromechanical devices in industrial sectors which include chemicals, pharmaceuticals, biosciences, medicine and food. The realization of such products, first requires an effective process to design and manufacture prototypes. Two process methods used for the fabrication of high aspect-ratio microstructures are based on X-ray beam lithography with electroforming processes and direct micromachining with a frequency multiplied Nd:YAG laser using nanosecond pulse widths. Factors which limit the efficiency and precision obtainable using such processes are important parameters when deciding on the best fabrication method to use. A basic microstructure with narrow channels suitable for a microfluidic mixer have been fabricated using both these techniques and comparisons made of the limitations and suitability of the processes in respect of fast prototyping and manufacture or working devices.

ALF: a facility for x-ray lithography II--a progress report

NASA Astrophysics Data System (ADS)

Lesoine, L. G.; Kukkonen, Kenneth W.; Leavey, Jeffrey A.

1992-07-01

In our previous paper which we presented here two years ago, we described the ALF (Advanced Lithography Facility), IBM's new facility for X-ray lithography which was built as an addition to the Advanced Semiconductor Technology Center at IBM's semiconductor plant in Hopewell Jct., NY. At that time, we described the structure, its utilities, facilities and special features such as the radiation shielding, control room, clean room and vibration resistant design. The building has been completed and occupied. By the time this paper is presented the storage ring will be commissioned, the clean room occupied, and two beamlines with one stepper operational. In this paper we will review the successful completion of the facility with its associated hardware. The installation of the synchrotron will be described elsewhere. We will also discuss the first measurements of vibration, clean room cleanliness and the effectiveness of the radiation shielding. The ALF was completed on schedule and cost objectives were met. This is attributed to careful planning, close cooperation among all the parties involved from the technical team in IBM Research, the system vendor (Oxford Instruments of Oxford England) to the many contractors and subcontractors and to strong support from IBM senior management. All the planned building specifications were met and the facility has come on-line with a minimum of problems. Most important, the initial measurements show that the radiation shielding plan is sound and that with a few modifications the dose limit of 10% of background will be met. Any concerns about an electron accelerator and synchrotron in an industrial setting have been eliminated.

Changes in the near edge X-ray absorption fine structure of hybrid organic-inorganic resists upon exposure.

PubMed

Fallica, Roberto; Watts, Benjamin; Roesner, Benedikt; Della Giustina, Gioia; Brigo, Laura; Brusatin, Giovanna; Ekinci, Yasin

2018-06-14

We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments were conducted using a scanning transmission X-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (~ 290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that the such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remain and form undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for extreme ultraviolet lithography. © 2018 IOP Publishing Ltd.

[Experimental investigation of laser plasma soft X-ray source with gas target].

PubMed

Ni, Qi-liang; Gong, Yan; Lin, Jing-quan; Chen, Bo; Cao, Jian-lin

2003-02-01

This paper describes a debris-free laser plasma soft X-ray source with a gas target, which has high operating frequency and can produce strong soft X-ray radiation. The valve of this light source is drived by a piezoelectrical ceramic whose operating frequency is up to 400 Hz. In comparison with laser plasma soft X-ray sources using metal target, the light source is debris-free. And it has higher operating frequency than gas target soft X-ray sources whose nozzle is controlled by a solenoid valve. A channel electron multiplier (CEM) operating in analog mode is used to detect the soft X-ray generated by the laser plasma source, and the CEM's output is fed to to a charge-sensitive preamplifier for further amplification purpose. Output charges from the CEM are proportional to the amplitude of the preamplifier's output voltage. Spectra of CO2, Xe and Kr at 8-14 nm wavelength which can be used for soft X-ray projection lithography are measured. The spectrum for CO2 consists of separate spectral lines originate mainly from the transitions in Li-like and Be-like ions. The Xe spectrum originating mainly from 4d-5f, 4d-4f, 4d-6p and 4d-5p transitions in multiply charged xenon ions. The spectrum for Kr consists of separate spectral lines and continuous broad spectra originating mainly from the transitions in Cu-, Ni-, Co- and Fe-like ions.

Synthesis, Properties, and Applications Of Boron Nitride

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.

1993-01-01

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

X-Ray Lithography In Japan

DTIC Science & Technology

1991-10-01

Contacted: S. Yoshida Senior Managing Director S. Sasayama General Manger Design H . Izawa Senior Manager Mechanical Design T. Onuki Manager Technological...9 -17164I! H liii H Igfil Coordinated by Loyola College in Maryland 4501 North Charles Street I )Y(IA Baltimore, Maryland 21210-2699 91 1 2 5 41 \\\\Ll...Director Bobby A. Williams, Business Manager Arniinah Batta, Administrative Assistant Christopher Hetmansici, Student Assistant Patricia M. H . Johnson

Free jet micromixer to study fast chemical reactions by small angle X-ray scattering.

PubMed

Marmiroli, Benedetta; Grenci, Gianluca; Cacho-Nerin, Fernando; Sartori, Barbara; Ferrari, Enrico; Laggner, Peter; Businaro, Luca; Amenitsch, Heinz

2009-07-21

We present the design, fabrication process, and the first test results of a high aspect ratio micromixer combined with a free jet for under 100 micros time resolved studies of chemical reactions. The whole system has been optimized for synchrotron small angle X-ray scattering (SAXS) experiments. These studies are of particular interest to understand the early stages of chemical reactions, such as the kinetics of nanoparticle formation. The mixer is based on hydrodynamic focusing and works in the laminar regime. The use of a free jet overcomes the fouling of the channels and simultaneously circumvents background scattering from the walls. The geometrical parameters of the device have been optimized using finite element simulations, resulting in smallest features with radius <1 microm, and a channel depth of 60 microm, thus leading to an aspect ratio >60. To achieve the desired dimensions deep X-ray lithography (DXRL) has been employed. The device has been tested. First the focusing effect has been visualized using fluorescein. Then the evolution and stability of the jet, which exits the mixer nozzle at 13 m s(-1), have been characterized. Finally SAXS measurements have been conducted of the formation of calcium carbonate from calcium chloride and sodium carbonate. The fastest measurement is 75 micros after the beginning of the mixing of the reagents. The nanostructural evolution of chemical reactions is clearly discernible.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Mask fabrication and its applications to extreme ultra-violet diffractive optics

NASA Astrophysics Data System (ADS)

Cheng, Yang-Chun

Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist materials.

Magnetic Calorimeter Arrays with High Sensor Inductance and Dense Wiring

NASA Astrophysics Data System (ADS)

Stevenson, T. R.; Balvin, M. A.; Bandler, S. R.; Devasia, A. M.; Nagler, P. C.; Smith, S. J.; Yoon, W.

2018-05-01

We describe prototype arrays of magnetically coupled microcalorimeters fabricated with an approach scalable to very large format arrays. The superconducting interconnections and sensor coils have sufficiently low inductance in the wiring and sufficiently high inductance in the coils in each pixel, to enable arrays containing greater than 4000 sensors and 100,000 X-ray absorbers to be used in future astrophysics missions such as Lynx. We have used projection lithography to create submicron patterns (e.g., 400 nm lines and spaces) in our niobium sensor coils and wiring, integrated with gold-erbium sensor films and gold X-ray absorbers. Our prototype devices will explore the device physics of metallic magnetic calorimeters as feature sizes are reduced to nanoscale.

Scanning digital lithography providing high speed large area patterning with diffraction limited sub-micron resolution

NASA Astrophysics Data System (ADS)

Wen, Sy-Bor; Bhaskar, Arun; Zhang, Hongjie

2018-07-01

A scanning digital lithography system using computer controlled digital spatial light modulator, spatial filter, infinity correct optical microscope and high precision translation stage is proposed and examined. Through utilizing the spatial filter to limit orders of diffraction modes for light delivered from the spatial light modulator, we are able to achieve diffraction limited deep submicron spatial resolution with the scanning digital lithography system by using standard one inch level optical components with reasonable prices. Raster scanning of this scanning digital lithography system using a high speed high precision x-y translation stage and piezo mount to real time adjust the focal position of objective lens allows us to achieve large area sub-micron resolved patterning with high speed (compared with e-beam lithography). It is determined in this study that to achieve high quality stitching of lithography patterns with raster scanning, a high-resolution rotation stage will be required to ensure the x and y directions of the projected pattern are in the same x and y translation directions of the nanometer precision x-y translation stage.

Simulation and experimental study of aspect ratio limitation in Fresnel zone plates for hard-x-ray optics.

PubMed

Liu, Jianpeng; Shao, Jinhai; Zhang, Sichao; Ma, Yaqi; Taksatorn, Nit; Mao, Chengwen; Chen, Yifang; Deng, Biao; Xiao, Tiqiao

2015-11-10

For acquiring high-contrast and high-brightness images in hard-x-ray optics, Fresnel zone plates with high aspect ratios (zone height/zone width) have been constantly pursued. However, knowledge of aspect ratio limits remains limited. This work explores the achievable aspect ratio limit in polymethyl methacrylate (PMMA) by electron-beam lithography (EBL) under 100 keV, and investigates the lithographic factors for this limitation. Both Monte Carlo simulation and EBL on thick PMMA are applied to investigate the profile evolution with exposure doses over 100 nm wide dense zones. A high-resolution scanning electron microscope at low acceleration mode for charging free is applied to characterize the resultant zone profiles. It was discovered for what we believe is the first time that the primary electron-beam spreading in PMMA and the proximity effect due to extra exposure from neighboring areas could be the major causes of limiting the aspect ratio. Using the optimized lithography condition, a 100 nm zone plate with aspect ratio of 15/1 was fabricated and its focusing property was characterized at the Shanghai Synchrotron Radiation Facility. The aspect ratio limit found in this work should be extremely useful for guiding further technical development in nanofabrication of high-quality Fresnel zone plates.

The Marshall Grazing Incidence X-ray Spectrometer

NASA Astrophysics Data System (ADS)

Kobayashi, Ken; Winebarger, Amy R.; Savage, Sabrina; Champey, Patrick; Cheimets, Peter N.; Hertz, Edward; Bruccoleri, Alexander R.; Golub, Leon; Ramsey, Brian; Ranganathan, Jaganathan; Marquez, Vanessa; Allured, Ryan; Parker, Theodore; Heilmann, Ralf K.; Schattenburg, Mark L.

2017-08-01

The Marshall Grazing Incidence X-ray Spectrometer (MaGIXS) is a NASA sounding rocket instrument designed to obtain spatially resolved soft X-ray spectra of the solar atmosphere in the 6-24 Å (0.5-2.0 keV) range. The instrument consists of a single shell Wolter Type-I telescope, a slit, and a spectrometer comprising a matched pair of grazing incidence parabolic mirrors and a planar varied-line space diffraction grating. The instrument is designed to achieve a 50 mÅ spectral resolution and 5 arcsecond spatial resolution along a +/-4-arcminute long slit, and launch is planned for 2019. We report on the status and our approaches for fabrication and alignment for this novel optical system. The telescope and spectrometer mirrors are replicated nickel shells, and are currently being fabricated at the NASA Marshall Space Flight Center. The diffraction grating is currently under development by the Massachusetts Institute of Technology (MIT); because of the strong line spacing variation across the grating, it will be fabricated through e-beam lithography.

A Compact Soft X-Ray Microscope using an Electrode-less Z-Pinch Source.

PubMed

Horne, S F; Silterra, J; Holber, W

2009-01-01

Soft X-rays (< 1Kev) are of medical interest both for imaging and microdosimetry applications. X-ray sources at this low energy present a technological challenge. Synchrotrons, while very powerful and flexible, are enormously expensive national research facilities. Conventional X-ray sources based on electron bombardment can be compact and inexpensive, but low x-ray production efficiencies at low electron energies restrict this approach to very low power applications. Laser-based sources tend to be expensive and unreliable. Energetiq Technology, Inc. (Woburn, MA, USA) markets a 92 eV, 10W(2pi sr) electrode-less Z-pinch source developed for advanced semiconductor lithography. A modified version of this commercial product has produced 400 mW at 430 eV (2pi sr), appropriate for water window soft X-ray microscopy. The US NIH has funded Energetiq to design and construct a demonstration microscope using this source, coupled to a condenser optic, as the illumination system. The design of the condenser optic matches the unique characteristics of the source to the illumination requirements of the microscope, which is otherwise a conventional design. A separate program is underway to develop a microbeam system, in conjunction with the RARAF facility at Columbia University, NY, USA. The objective is to develop a focused, sub-micron beam capable of delivering > 1 Gy/second to the nucleus of a living cell. While most facilities of this type are coupled to a large and expensive particle accelerator, the Z-pinch X-ray source enables a compact, stand-alone design suitable to a small laboratory. The major technical issues in this system involve development of suitable focusing X-ray optics. Current status of these programs will be reported.

A Compact Soft X-Ray Microscope using an Electrode-less Z-Pinch Source

PubMed Central

Silterra, J; Holber, W

2009-01-01

Soft X-rays (< 1Kev) are of medical interest both for imaging and microdosimetry applications. X-ray sources at this low energy present a technological challenge. Synchrotrons, while very powerful and flexible, are enormously expensive national research facilities. Conventional X-ray sources based on electron bombardment can be compact and inexpensive, but low x-ray production efficiencies at low electron energies restrict this approach to very low power applications. Laser-based sources tend to be expensive and unreliable. Energetiq Technology, Inc. (Woburn, MA, USA) markets a 92 eV, 10W(2pi sr) electrode-less Z-pinch source developed for advanced semiconductor lithography. A modified version of this commercial product has produced 400 mW at 430 eV (2pi sr), appropriate for water window soft X-ray microscopy. The US NIH has funded Energetiq to design and construct a demonstration microscope using this source, coupled to a condenser optic, as the illumination system. The design of the condenser optic matches the unique characteristics of the source to the illumination requirements of the microscope, which is otherwise a conventional design. A separate program is underway to develop a microbeam system, in conjunction with the RARAF facility at Columbia University, NY, USA. The objective is to develop a focused, sub-micron beam capable of delivering > 1 Gy/second to the nucleus of a living cell. While most facilities of this type are coupled to a large and expensive particle accelerator, the Z-pinch X-ray source enables a compact, stand-alone design suitable to a small laboratory. The major technical issues in this system involve development of suitable focusing X-ray optics. Current status of these programs will be reported. PMID:20198115

An X-Ray Source for Lithography Based on a Quasi-Optical Maser Undulator

DTIC Science & Technology

1989-05-09

an electron, c is the speed of light in vacuo, B is the peak magnetic induction and X is the period of the planar undulator or wiggler, the wavelength...relativistic motion is given 11 p = Le’ Y 6 [2 - X )2] (4) where = v/c is the particle velocity normalized to the speAd of light , and § /c, where v = -v is...k0 z + Wt),) (7) where E is the amplitude of the electric field, w is the radian frequency A and k a (0,0,k ) is the wave- vector . ez is a unit vector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mills, Dennis; Padmore, Howard; Lessner, Eliane

Each new generation of synchrotron radiation sources has delivered an increase in average brightness 2 to 3 orders of magnitude over the previous generation. The next evolution toward diffraction-limited storage rings will deliver another 3 orders of magnitude increase. For ultrafast experiments, free electron lasers (FELs) deliver 10 orders of magnitude higher peak brightness than storage rings. Our ability to utilize these ultrabright sources, however, is limited by our ability to focus, monochromate, and manipulate these beams with X-ray optics. X-ray optics technology unfortunately lags behind source technology and limits our ability to maximally utilize even today’s X-ray sources. Withmore » ever more powerful X-ray sources on the horizon, a new generation of X-ray optics must be developed that will allow us to fully utilize these beams of unprecedented brightness. The increasing brightness of X-ray sources will enable a new generation of measurements that could have revolutionary impact across a broad area of science, if optical systems necessary for transporting and analyzing X-rays can be perfected. The high coherent flux will facilitate new science utilizing techniques in imaging, dynamics, and ultrahigh-resolution spectroscopy. For example, zone-plate-based hard X-ray microscopes are presently used to look deeply into materials, but today’s resolution and contrast are restricted by limitations of the current lithography used to manufacture nanodiffractive optics. The large penetration length, combined in principle with very high spatial resolution, is an ideal probe of hierarchically ordered mesoscale materials, if zone-plate focusing systems can be improved. Resonant inelastic X-ray scattering (RIXS) probes a wide range of excitations in materials, from charge-transfer processes to the very soft excitations that cause the collective phenomena in correlated electronic systems. However, although RIXS can probe high-energy excitations, the most exciting and potentially revolutionary science involves soft excitations such as magnons and phonons; in general, these are well below the resolution that can be probed by today’s optical systems. The study of these low-energy excitations will only move forward if advances are made in high-resolution gratings for the soft X-ray energy region, and higher-resolution crystal analyzers for the hard X-ray region. In almost all the forefront areas of X-ray science today, the main limitation is our ability to focus, monochromate, and manipulate X-rays at the level required for these advanced measurements. To address these issues, the U.S. Department of Energy (DOE) Office of Basic Energy Sciences (BES) sponsored a workshop, X-ray Optics for BES Light Source Facilities, which was held March 27–29, 2013, near Washington, D.C. The workshop addressed a wide range of technical and organizational issues. Eleven working groups were formed in advance of the meeting and sought over several months to define the most pressing problems and emerging opportunities and to propose the best routes forward for a focused R&D program to solve these problems. The workshop participants identified eight principal research directions (PRDs), as follows: Development of advanced grating lithography and manufacturing for high-energy resolution techniques such as soft X-ray inelastic scattering. Development of higher-precision mirrors for brightness preservation through the use of advanced metrology in manufacturing, improvements in manufacturing techniques, and in mechanical mounting and cooling. Development of higher-accuracy optical metrology that can be used in manufacturing, verification, and testing of optomechanical systems, as well as at wavelength metrology that can be used for quantification of individual optics and alignment and testing of beamlines. Development of an integrated optical modeling and design framework that is designed and maintained specifically for X-ray optics. Development of nanolithographic techniques for improved spatial resolution and efficiency of zone plates. Development of large, perfect single crystals of materials other than silicon for use as beam splitters, seeding monochromators, and high-resolution analyzers. Development of improved thin-film deposition methods for fabrication of multilayer Laue lenses and high-spectral-resolution multilayer gratings. Development of supports, actuator technologies, algorithms, and controls to provide fully integrated and robust adaptive X-ray optic systems. Development of fabrication processes for refractive lenses in materials other than silicon. The workshop participants also addressed two important nontechnical areas: our relationship with industry and organization of optics within the light source facilities. Optimization of activities within these two areas could have an important effect on the effectiveness and efficiency of our overall endeavor. These are crosscutting managerial issues that we identified as areas that needed further in-depth study, but they need to be coordinated above the individual facilities. Finally, an issue that cuts across many of the optics improvements listed above is routine access to beamlines that ideally are fully dedicated to optics research and/or development. The success of the BES X-ray user facilities in serving a rapidly increasing user community has led to a squeezing of beam time for vital instrumentation activities. Dedicated development beamlines could be shared with other R&D activities, such as detector programs and novel instrument development. In summary, to meet the challenges of providing the highest-quality X-ray beams for users and to fully utilize the high-brightness sources of today and those that are on the horizon, it will be critical to make strategic investments in X-ray optics R&D. This report can provide guidance and direction for effective use of investments in the field of X-ray optics and potential approaches to develop a better-coordinated program of X-ray optics development within the suite of BES synchrotron radiation facilities. Due to the importance and complexity of the field, the need for tight coordination between BES light source facilities and with industry, as well as the rapid evolution of light source capabilities, the workshop participants recommend holding similar workshops at least biannually.« less

High Throughput Optical Lithography by Scanning a Massive Array of Bowtie Aperture Antennas at Near-Field

DTIC Science & Technology

2015-11-03

scale optical projection system powered by spatial light modulators, such as digital micro-mirror device ( DMD ). Figure 4 shows the parallel lithography ...1Scientific RepoRts | 5:16192 | DOi: 10.1038/srep16192 www.nature.com/scientificreports High throughput optical lithography by scanning a massive...array of bowtie aperture antennas at near-field X. Wen1,2,3,*, A. Datta1,*, L. M. Traverso1, L. Pan1, X. Xu1 & E. E. Moon4 Optical lithography , the

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

PubMed

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-11-04

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-11-01

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

PubMed Central

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-01-01

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer. PMID:27812006

Ultraviolet Channeling Dynamics in Gaseous Media for X -- Ray Production

NASA Astrophysics Data System (ADS)

McCorkindale, John Charters

The development of a coherent high brightness / short duration X -- ray source has been of considerable interest to the scientific community as well as various industries since the invention of the technology. Possible applications include X -- ray lithography, biological micro-imaging and the probing of molecular and atomic dynamics. One such source under investigation involves the interaction of a high pulsed power KrF UV laser with a noble gas target (krypton or xenon), producing a photon energy from 1 -- 5 keV. Amplification in this regime requires materials with very special properties found in spatially organized hollow atom clusters. One of the driving forces behind X -- ray production is the UV laser. Theoretical analysis shows that above a critical laser power, the formation of a stable plasma channel in the gaseous medium will occur which can act as a guide for the X-ray pulse and co-propagating UV beam. These plasma channels are visualized with a triple pinhole camera, axial and transverse von Hamos spectrometers and a Thomson scattering setup. In order to understand observed channel morphologies, full characterization of the drive laser was achieved using a Transient Grating -- Frequency Resolved Optical Gating (TG-FROG) technique which gives a full temporal representation of the electric field and associated phase of the ultrashort pulse. Insights gleaned from the TG -- FROG data as well as analysis of photodiode diagnostics placed along the UV laser amplification chain provide explanations for the plasma channel morphology and X -- ray output.

Microfluidic devices fabricated in poly(methyl methacrylate) using hot-embossing with integrated sampling capillary and fiber optics for fluorescence detection.

PubMed

Qi, Shize; Liu, Xuezhu; Ford, Sean; Barrows, James; Thomas, Gloria; Kelly, Kevin; McCandless, Andrew; Lian, Kun; Goettert, Jost; Soper, Steven A

2002-05-01

High-aspect-ratio microstructures have been prepared using hot-embossing techniques in poly(methyl methacrylate) (PMMA) from Ni-based molding dies prepared using LIGA (Lithographie, Galvanoformung, Abformung). Due to the small amount of mask undercutting associated with X-ray lithography and the high energy X-ray beam used during photoresist patterning, deep structures with sharp and smooth sidewalls have been prepared. The Ni-electroforms produced devices with minimal replication errors using hot-embossing at a turn around time of approximately 5 min per device. In addition, several different polymers (with different glass transition temperatures) could be effectively molded with these Ni-electroforms and many devices (>300) molded with the same master without any noticeable degradation. The PMMA devices consisted of deep and narrow channels for insertion of a capillary for the automated electrokinetic loading of sample into the microfluidic device and also, a pair of optical fibers for shuttling laser light to the detection zone and collecting the resulting emission for fluorescence analysis. Electrophoretic separations of double-stranded DNA ladders Phi X174 digested with Hae III) were performed with fluorescence detection accomplished using near-IR excitation. It was found that the narrow width of the channels did not contribute significantly to electrophoretic zone broadening and the plate numbers generated in the extended length separation channel allowed sorting of the 271/281 base pair fragments associated with this sizing ladder when electrophoresed in methylcellulose entangled polymer solutions. The dual fiber detector produced sub-attomole detection limits with the entire detector, including laser source, electronics and photon transducer, situated in a single box measuring 3'' x 10" x 14".

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Aydogan, Cemal; Lipowicz, Hubert-Seweryn; Ivanov, Tzvetan; Lenk, Steve; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Atanasov, Ivaylo; Krivoshapkina, Yana; Hofer, Manuel; Holz, Mathias; Rangelow, Ivo W.

2015-03-01

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many novel nanoelectronic, NEMS, optical and bio-nanotechnology-based devices. Based on the thermally actuated, piezoresistive cantilever technology we have developed a first prototype of a scanning probe lithography (SPL) platform able to image, inspect, align and pattern features down to single digit nano regime. The direct, mask-less patterning of molecular resists using active scanning probes represents a promising path circumventing the problems in today's radiation-based lithography. Here, we present examples of practical applications of the previously published electric field based, current-controlled scanning probe lithography on molecular glass resist calixarene by using the developed tabletop SPL system. We demonstrate the application of a step-and-repeat scanning probe lithography scheme including optical as well as AFM based alignment and navigation. In addition, sequential read-write cycle patterning combining positive and negative tone lithography is shown. We are presenting patterning over larger areas (80 x 80 μm) and feature the practical applicability of the lithographic processes.

Toward a Micro Gas Chromatograph/Mass Spectrometer (GC/MS) System

NASA Technical Reports Server (NTRS)

Wiberg, D. V.; Eyre, F. B.; Orient, O.; Chutjian, A.; Garkarian, V.

2001-01-01

Miniature mass filters (e.g., quadrupoles, ion traps) have been the subject of several miniaturization efforts. A project is currently in progress at JPL to develop a miniaturized Gas Chromatograph/Mass Spectrometer (GC/MS) system, incorporating and/or developing miniature system components including turbomolecular pumps, scroll type roughing pump, quadrupole mass filter, gas chromatograph, precision power supply and other electronic components. The preponderance of the system elements will be fabricated using microelectromechanical systems (MEMS) techniques. The quadrupole mass filter will be fabricated using an X-ray lithography technique producing high precision, 5x5 arrays of quadrupoles with pole lengths of about 3 mm and a total volume of 27 cubic mm. The miniature scroll pump will also be fabricated using X-ray lithography producing arrays of scroll stages about 3 mm in diameter. The target detection range for the mass spectrometer is 1 to 300 atomic mass units (AMU) with are solution of 0.5 AMU. This resolution will allow isotopic characterization for geochronology, atmospheric studies and other science efforts dependant on the understanding of isotope ratios of chemical species. This paper will discuss the design approach, the current state-of-the art regarding the system components and the progress toward development of key elements. The full system is anticipated to be small enough in mass, volume and power consumption to allow in situ chemical analysis on highly miniaturized science craft for geochronology, atmospheric characterization and detection of life experiments applicable to outer planet roadmap missions.

Optimizing laser produced plasmas for efficient extreme ultraviolet and soft X-ray light sources

NASA Astrophysics Data System (ADS)

Sizyuk, Tatyana; Hassanein, Ahmed

2014-08-01

Photon sources produced by laser beams with moderate laser intensities, up to 1014 W/cm2, are being developed for many industrial applications. The performance requirements for high volume manufacture devices necessitate extensive experimental research supported by theoretical plasma analysis and modeling predictions. We simulated laser produced plasma sources currently being developed for several applications such as extreme ultraviolet lithography using 13.5% ± 1% nm bandwidth, possibly beyond extreme ultraviolet lithography using 6.× nm wavelengths, and water-window microscopy utilizing 2.48 nm (La-α) and 2.88 nm (He-α) emission. We comprehensively modeled plasma evolution from solid/liquid tin, gadolinium, and nitrogen targets as three promising materials for the above described sources, respectively. Results of our analysis for plasma characteristics during the entire course of plasma evolution showed the dependence of source conversion efficiency (CE), i.e., laser energy to photons at the desired wavelength, on plasma electron density gradient. Our results showed that utilizing laser intensities which produce hotter plasma than the optimum emission temperatures allows increasing CE for all considered sources that, however, restricted by the reabsorption processes around the main emission region and this restriction is especially actual for the 6.× nm sources.

Submicron Structures and Various Technology

DTIC Science & Technology

1990-06-01

Replication in PMMA of a 30 nm-wide gold focused-ion-beam lithography alone. We are absorber line with (a) CK (A = 4.5 nm), ( b ) developing a new generation of...into soft x-ray spectroscopy and atom beam contact with the substrate b electrostatic interferometry, and to fabricate new classes means. A variety of...Professor Dimitri A. Antonaidis, Stuart B . Field, drain resistances and gate-source overlaps. Professor Marc A. Kastner, Udi Meirav, Samuel L. This will

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

PubMed

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

2018-05-09

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

Impact of VLSI/VHSIC on satellite on-board signal processing

NASA Astrophysics Data System (ADS)

Aanstoos, J. V.; Ruedger, W. H.; Snyder, W. E.; Kelly, W. L.

Forecasted improvements in IC fabrication techniques, such as the use of X-ray lithography, are expected to yield submicron circuit feature sizes within the decade of the 1980s. As dimensions decrease, reliability, cost, speed, power consumption and density improvements will be realized which have a significant impact on the capabilities of onboard spacecraft signal processing functions. This will in turn result in increases of the intelligence that may be deployed on spaceborne remote sensing platforms. Among programs oriented toward such goals are the silicon-based Very High Speed Integrated Circuit (VHSIC) researches sponsored by the U.S. Department of Defense, and efforts toward the development of GaAs devices which will compete with silicon VLSI technology for future applications. GaAs has an electron mobility which is five to six times that of silicon, and promises commensurate computation speed increases under low field conditions.

Department of Defense statement on the X-ray Lithography Program to the Research and Development Subcommittee of the House Armed Services Committee of 100th Congress, second session

NASA Astrophysics Data System (ADS)

Maynard, E. D., Jr.

1988-03-01

The Department has a broad and necessarily diverse program in semiconductor science and technology. The three principal goals of that effort are: Reduce the gap between commercial integrated circuit usage and its deployment in military systems, assure a healthy on-shore industrial base to support our defense needs, enhance the producibility of specialized military semiconductor products. The major effort to achieve the first of these objectives is the Very High Speed Integrated Circuits (VHSIC) Program which is nearing completion. The Microwave/millimeter wave Monolithic Integrated Circuit (MIMIC) program has just completed a study program to define the product mix needed to meet military system requirements for radar, electronic warfare, smart weapons and telecommunications. We are bringing together the system requirements of all DoD with the device fabrication and product delivery capabilities of industry in an Infrared Focal Plane Array (IRFPA) program. The goal of the Software Initiative is to enhance our warfighting capability through development of efficient software generation technology and products plus the creation of a technology infusion infrastructure to couple the technology and products to system applications. The X-Ray Lithography Program will begin to establish the industrial base which will be required to sustain U.S. leadership in the semiconductor industry for the late 1990s.

Development of x-ray mask in Taiwan

NASA Astrophysics Data System (ADS)

Sheu, Jeng Tzong; Su, Shyang

1996-05-01

This paper presents results of using silicon carbide (SiC) and silicon-rich silicon nitride (SiNx) as membrane for X-ray masks in technology of X-ray lithography. Microcrystalline silicon carbide film was deposited on silicon substrate by electron synchrotron resonance plasma-enhanced chemical vapor deposition at 300 degrees C utilizing a SiH4/CH4/H2/Ar gas mixture. Low tensile stress film which is suitable as X-ray membrane can be achieved by annealing after silicon carbide film deposition. The microwave power over 800 watts and the gas ratio (Methane:Silane) larger than 1.5 are needed for the stoichiometry of SiC film. On the other hand, we deposited silicon-rich silicon nitride film on silicon substrate by low pressure chemical vapor deposition at 850 degrees C to 900 degrees C. In order to get low tensile stress film, different gas flow ratios (Dichlorosilane:Ammonia) were tested. The increased gas flow ratio (Dichlorosilane:Ammonia) and the increased deposition temperature are related to the decrease of tensile stress of film. Roughness, uniformity, optical transmittance and soft X-ray transmission of both films are reported. The absorption bands of both films were measured by FTIR spectroscopy. The surface morphology was monitored by AFM. The photon transmission of both films was measured in the range of 400 to 800 nm for visible light and 800 to 1600 ev photon energy for SR soft X-ray transmission was conducted at the Synchrotron Radiation Research Center, Hsinchu, Taiwan. The deposition rate of both films are 13 nm/min and 40 nm/min for silicon nitride and silicon carbide, respectively.

A novel methodology for litho-to-etch pattern fidelity correction for SADP process

NASA Astrophysics Data System (ADS)

Chen, Shr-Jia; Chang, Yu-Cheng; Lin, Arthur; Chang, Yi-Shiang; Lin, Chia-Chi; Lai, Jun-Cheng

2017-03-01

For 2x nm node semiconductor devices and beyond, more aggressive resolution enhancement techniques (RETs) such as source-mask co-optimization (SMO), litho-etch-litho-etch (LELE) and self-aligned double patterning (SADP) are utilized for the low k1 factor lithography processes. In the SADP process, the pattern fidelity is extremely critical since a slight photoresist (PR) top-loss or profile roughness may impact the later core trim process, due to its sensitivity to environment. During the subsequent sidewall formation and core removal processes, the core trim profile weakness may worsen and induces serious defects that affect the final electrical performance. To predict PR top-loss, a rigorous lithography simulation can provide a reference to modify mask layouts; but it takes a much longer run time and is not capable of full-field mask data preparation. In this paper, we first brought out an algorithm which utilizes multi-intensity levels from conventional aerial image simulation to assess the physical profile through lithography to core trim etching steps. Subsequently, a novel correction method was utilized to improve the post-etch pattern fidelity without the litho. process window suffering. The results not only matched PR top-loss in rigorous lithography simulation, but also agreed with post-etch wafer data. Furthermore, this methodology can also be incorporated with OPC and post-OPC verification to improve core trim profile and final pattern fidelity at an early stage.

Machine Protection System for the Stepper Motor Actuated SyLMAND Mirrors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramanian, V. R.; Dolton, W.; Wells, G.

2010-06-23

SyLMAND, the Synchrotron Laboratory for Micro and Nano Devices at the Canadian Light Source, consists of a dedicated X-ray lithography beamline on a bend magnet port, and process support laboratories in a clean room environment. The beamline includes a double mirror system with flat, chromium-coated silicon mirrors operated at varying grazing angles of incidence (4 mrad to 45 mrad) for spectral adjustment by high energy cut-off. Each mirror can be independently moved by two stepper motors to precisely control the pitch and vertical position. We present in this paper the machine protection system implemented in the double mirror system tomore » allow for safe operation of the two mirrors and to avoid consequences of potential stepper motor malfunction.« less

Recent Developments in Microsystems Fabricated by the Liga-Technique

NASA Technical Reports Server (NTRS)

Schulz, J.; Bade, K.; El-Kholi, A.; Hein, H.; Mohr, J.

1995-01-01

As an example of microsystems fabricated by the LIGA-technique (x-ray lithography, electroplating and molding), three systems are described and characterized: a triaxial acceleration sensor system, a micro-optical switch, and a microsystem for the analysis of pollutants. The fabrication technologies are reviewed with respect to the key components of the three systems: an acceleration sensor, and electrostatic actuator, and a spectrometer made by the LIGA-technique. Aa micro-pump and micro-valve made by using micromachined tools for molding and optical fiber imaging are made possible by combining LIGA and anisotropic etching of silicon in a batch process. These examples show that the combination of technologies and components is the key to complex microsystems. The design of such microsystems will be facilitated is standardized interfaces are available.

Upgrade of beamline BL08B at Taiwan Light Source from a photon-BPM to a double-grating SGM beamline.

PubMed

Yuh, Jih Young; Lin, Shan Wei; Huang, Liang Jen; Fung, Hok Sum; Lee, Long Life; Chen, Yu Joung; Cheng, Chiu Ping; Chin, Yi Ying; Lin, Hong Ji

2015-09-01

During the last 20 years, beamline BL08B has been upgraded step by step from a photon beam-position monitor (BPM) to a testing beamline and a single-grating beamline that enables experiments to record X-ray photo-emission spectra (XPS) and X-ray absorption spectra (XAS) for research in solar physics, organic semiconductor materials and spinel oxides, with soft X-ray photon energies in the range 300-1000 eV. Demands for photon energy to extend to the extreme ultraviolet region for applications in nano-fabrication and topological thin films are increasing. The basic spherical-grating monochromator beamline was again upgraded by adding a second grating that delivers photons of energy from 80 to 420 eV. Four end-stations were designed for experiments with XPS, XAS, interstellar photoprocess systems (IPS) and extreme-ultraviolet lithography (EUVL) in the scheduled beam time. The data from these experiments show a large count rate in core levels probed and excellent statistics on background normalization in the L-edge adsorption spectrum.

Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation.

PubMed

Wenisch, J; Gould, C; Ebel, L; Storz, J; Pappert, K; Schmidt, M J; Kumpf, C; Schmidt, G; Brunner, K; Molenkamp, L W

2007-08-17

We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.

Geometrical E-beam proximity correction for raster scan systems

NASA Astrophysics Data System (ADS)

Belic, Nikola; Eisenmann, Hans; Hartmann, Hans; Waas, Thomas

1999-04-01

High pattern fidelity is a basic requirement for the generation of masks containing sub micro structures and for direct writing. Increasing needs mainly emerging from OPC at mask level and x-ray lithography require a correction of the e-beam proximity effect. The most part of e-beam writers are raster scan system. This paper describes a new method for geometrical pattern correction in order to provide a correction solution for e-beam system that are not able to apply variable doses.

Magnetron Sputtering as a Fabrication Method for a Biodegradable Fe32Mn Alloy

PubMed Central

Jurgeleit, Till; Quandt, Eckhard; Zamponi, Christiane

2017-01-01

Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding alternative fabrication processes are important. In the present study, magnetron sputtering technology in combination with UV-lithography was used in order to fabricate freestanding, microstructured Fe32Mn films. To adjust the microstructure and crystalline phase composition with respect to the requirements, the foils were post-deposition annealed under a reducing atmosphere. The microstructure and crystalline phase composition were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. Furthermore, for mechanical characterization, uniaxial tensile tests were performed. The in vitro corrosion rates were determined by electrochemical polarization measurements in pseudo-physiological solution. Additionally, the magnetic properties were measured via vibrating sample magnetometry. The foils showed a fine-grained structure and a tensile strength of 712 MPa, which is approximately a factor of two higher compared to the sputtered pure Fe reference material. The yield strength was observed to be even higher than values reported in literature for alloys with similar composition. Against expectations, the corrosion rates were found to be lower in comparison to pure Fe. Since the annealed foils exist in the austenitic, and antiferromagnetic γ-phase, an additional advantage of the FeMn foils is the low magnetic saturation polarization of 0.003 T, compared to Fe with 1.978 T. This value is even lower compared to the SS 316L steel acting as a gold standard for implants, and thus enhances the MRI compatibility of the material. The study demonstrates that magnetron sputtering in combination with UV-lithography is a new concept for the fabrication of already in situ geometrically structured FeMn-based foils with promising mechanical and magnetic properties. PMID:29057837

Critical illumination condenser for x-ray lithography

DOEpatents

Cohen, S.J.; Seppala, L.G.

1998-04-07

A critical illumination condenser system is disclosed, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 {micro}m source and requires a magnification of 26. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth. 6 figs.

Critical illumination condenser for x-ray lithography

DOEpatents

Cohen, Simon J.; Seppala, Lynn G.

1998-01-01

A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

Evolution analysis of EUV radiation from laser-produced tin plasmas based on a radiation hydrodynamics model

PubMed Central

Su, M. G.; Min, Q.; Cao, S. Q.; Sun, D. X.; Hayden, P.; O’Sullivan, G.; Dong, C. Z.

2017-01-01

One of fundamental aims of extreme ultraviolet (EUV) lithography is to maximize brightness or conversion efficiency of laser energy to radiation at specific wavelengths from laser produced plasmas (LPPs) of specific elements for matching to available multilayer optical systems. Tin LPPs have been chosen for operation at a wavelength of 13.5 nm. For an investigation of EUV radiation of laser-produced tin plasmas, it is crucial to study the related atomic processes and their evolution so as to reliably predict the optimum plasma and experimental conditions. Here, we present a simplified radiation hydrodynamic model based on the fluid dynamic equations and the radiative transfer equation to rapidly investigate the evolution of radiation properties and dynamics in laser-produced tin plasmas. The self-absorption features of EUV spectra measured at an angle of 45° to the direction of plasma expansion have been successfully simulated and explained, and the evolution of some parameters, such as the plasma temperature, ion distribution and density, expansion size and velocity, have also been evaluated. Our results should be useful for further understanding of current research on extreme ultraviolet and soft X-ray source development for applications such as lithography, metrology and biological imaging. PMID:28332621

Defect generation in silicon dioxide from synchrotron radiation below 41 eV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, C. K.; Reisman, A.; Bhattacharya, P.

1989-07-01

Generation of fixed positive charge, neutral electron traps, and fixednegative charge in SiO/sub 2/ due to exposure to x radiation in the photon energyrange below 41 eV from a synchrotron source is reported. For constant incidentx-radiation exposure levels of 120 mJ/cm/sup 2/ with both monochromatic andbroadband radiation, the number of defects generated in the monitoring deviceswas at or below the detection limit of the equipment. This is in sharp contrastwith the results obtained at photon energies above 300 eV reported earlier (C.K. Williams, A. Reisman, P. K. Bhattacharya, and W. Ng, J. Appl. Phys./bold 64/, 1145 (1988)) in which amore » large number of each of the three defectsmentioned above were generated. The lack of damage indicates that the problemsassociated with x-ray-induced insulator damage due to x-ray lithography may besolved by tailoring the photon energy, provided suitable mask and photoresistmaterials can be developed.« less

Microscopy of biological sample through advanced diffractive optics from visible to X-ray wavelength regime.

PubMed

Di Fabrizio, Enzo; Cojoc, Dan; Emiliani, Valentina; Cabrini, Stefano; Coppey-Moisan, Maite; Ferrari, Enrico; Garbin, Valeria; Altissimo, Matteo

2004-11-01

The aim of this report is to demonstrate a unified version of microscopy through the use of advanced diffractive optics. The unified scheme derives from the technical possibility of realizing front wave engineering in a wide range of electromagnetic spectrum. The unified treatment is realized through the design and nanofabrication of phase diffractive elements (PDE) through which wave front beam shaping is obtained. In particular, we will show applications, by using biological samples, ranging from micromanipulation using optical tweezers to X-ray differential interference contrast (DIC) microscopy combined with X-ray fluorescence. We report some details on the design and physical implementation of diffractive elements that besides focusing also perform other optical functions: beam splitting, beam intensity, and phase redistribution or mode conversion. Laser beam splitting is used for multiple trapping and independent manipulation of micro-beads surrounding a cell as an array of tweezers and for arraying and sorting microscopic size biological samples. Another application is the Gauss to Laguerre-Gauss mode conversion, which allows for trapping and transfering orbital angular momentum of light to micro-particles immersed in a fluid. These experiments are performed in an inverted optical microscope coupled with an infrared laser beam and a spatial light modulator for diffractive optics implementation. High-resolution optics, fabricated by means of e-beam lithography, are demonstrated to control the intensity and the phase of the sheared beams in x-ray DIC microscopy. DIC experiments with phase objects reveal a dramatic increase in image contrast compared to bright-field x-ray microscopy. Besides the topographic information, fluorescence allows detection of certain chemical elements (Cl, P, Sc, K) in the same setup, by changing the photon energy of the x-ray beam. (c) 2005 Wiley-Liss, Inc.

High efficiency replicated x-ray optics and fabrication method

DOEpatents

Barbee, Jr., Troy W.; Lane, Stephen M.; Hoffman, Donald E.

2001-01-01

Replicated x-ray optics are fabricated by sputter deposition of reflecting layers on a super-polished reusable mandrel. The reflecting layers are strengthened by a supporting multilayer that results in stronger stress-relieved reflecting surfaces that do not deform during separation from the mandrel. The supporting multilayer enhances the ability to part the replica from the mandrel without degradation in surface roughness. The reflecting surfaces are comparable in smoothness to the mandrel surface. An outer layer is electrodeposited on the supporting multilayer. A parting layer may be deposited directly on the mandrel before the reflecting surface to facilitate removal of the layered, tubular optic device from the mandrel without deformation. The inner reflecting surface of the shell can be a single layer grazing reflection mirror or a resonant multilayer mirror. The resulting optics can be used in a wide variety of applications, including lithography, microscopy, radiography, tomography, and crystallography.

Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors

DOE PAGES

Belianinov, Alex; Iberi, Vighter; Tselev, Alexander; ...

2016-02-23

Rapid advanced in nanoscience rely on continuous improvements of matter manipulation at near atomic scales. Currently, well characterized, robust, resist-based lithography carries the brunt of the nanofabrication process. However, use of local electron, ion and physical probe methods is also expanding, driven largely by their ability to fabricate without the multi-step preparation processes that can result in contamination from resists and solvents. Furthermore, probe based methods extend beyond nanofabrication to nanomanipulation and imaging, vital ingredients to rapid transition to prototyping and testing of layered 2D heterostructured devices. In this work we demonstrate that helium ion interaction, in a Helium Ionmore » Microscope (HIM), with the surface of bulk copper indium thiophosphate CuM IIIP 2X 6 (M = Cr, In; X= S, Se), (CITP) results in the control of ferroelectric domains, and growth of cylindrical nanostructures with enhanced conductivity; with material volumes scaling with the dosage of the beam. The nanostructures are oxygen rich, sulfur poor, and with the copper concentration virtually unchanged as confirmed by Energy Dispersive X-ray (EDX). Scanning Electron Microscopy (SEM) imaging contrast as well as Scanning Microwave Microscopy (SMM) measurements suggest enhanced conductivity in the formed particle, whereas Atomic Force Microscopy (AFM) measurements indicate that the produced structures have lower dissipation and a lower Young s modulus.« less

1.55 µm emission from a single III-nitride top-down and site-controlled nanowire quantum disk

NASA Astrophysics Data System (ADS)

Chen, Qiming; Yan, Changling; Qu, Yi

2017-07-01

InN/InGaN single quantum well (SQW) was fabricated on 100 nm GaN buffer layer which was deposited on GaN template by plasma assisted molecular beam epitaxy (PA-MBE). The In composition and the surface morphology were measured by x-ray diffusion (XRD) and atom force microscope (AFM), respectively. Afterwards, the sample was fabricated into site-controlled nanowires arrays by hot-embossing nano-imprint lithography (HE-NIL) and ultraviolet nanoimprint lithography (UV-NIL). The nanowires were uniform along the c-axis and aligned periodically as presented by scanning electron microscope (SEM). The single nanowire showed disk-in-a-wire structure by high angle annular dark field (HAADF) and an In-rich or Ga deficient region was observed by energy dispersive x-ray spectrum (EDXS). The optical properties of the SQW film and single nanowire were measured using micro photoluminescence (µ-PL) spectroscopy. The stimulating light wavelength was 632.8 nm which was emitted from a He-Ne laser and the detector was a liquid nitrogen cooled InGaAs detector. A blue peak shift from the film material to the nanowire was observed. This was due to the quantum confinement Stark Effect. More importantly, the 1.55 µm emission was given from the single disk-in-a-wire structure at room temperature. We believe the arrays of such nanowires may be useful for quantum communication in the future.

Scanning laser reflection tool for alignment and period measurement of critical-angle transmission gratings

NASA Astrophysics Data System (ADS)

Song, Jungki; Heilmann, Ralf K.; Bruccoleri, Alexander R.; Hertz, Edward; Schatternburg, Mark L.

2017-08-01

We report progress toward developing a scanning laser reflection (LR) tool for alignment and period measurement of critical-angle transmission (CAT) gratings. It operates on a similar measurement principle as a tool built in 1994 which characterized period variations of grating facets for the Chandra X-ray Observatory. A specularly reflected beam and a first-order diffracted beam were used to record local period variations, surface slope variations, and grating line orientation. In this work, a normal-incidence beam was added to measure slope variations (instead of the angled-incidence beam). Since normal incidence reflection is not coupled with surface height change, it enables measurement of slope variations more accurately and, along with the angled-incidence beam, helps to reconstruct the surface figure (or tilt) map. The measurement capability of in-grating period variations was demonstrated by measuring test reflection grating (RG) samples that show only intrinsic period variations of the interference lithography process. Experimental demonstration for angular alignment of CAT gratings is also presented along with a custom-designed grating alignment assembly (GAA) testbed. All three angles were aligned to satisfy requirements for the proposed Arcus mission. The final measurement of roll misalignment agrees with the roll measurements performed at the PANTER x-ray test facility.

Jet and flash imprint defectivity: assessment and reduction for semiconductor applications

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.; Johnson, Steve; Resnick, Douglas J.; Lovell, David

2011-04-01

Defectivity has been historically identified as a leading technical roadblock to the implementation of nanoimprint lithography for semiconductor high volume manufacturing. The lack of confidence in nanoimprint's ability to meet defect requirements originates in part from the industry's past experiences with 1X lithography and the shortage in end-user generated defect data. SEMATECH has therefore initiated a defect assessment aimed at addressing these concerns. The goal is to determine whether nanoimprint, specifically Jet and Flash Imprint Lithography from Molecular Imprints, is capable of meeting semiconductor industry defect requirements. At this time, several cycles of learning have been completed in SEMATECH's defect assessment, with promising results. J-FIL process random defectivity of < 0.1 def/cm2 has been demonstrated using a 120nm half-pitch template, providing proof of concept that a low defect nanoimprint process is possible. Template defectivity has also improved significantly as shown by a pre-production grade template at 80nm pitch. Cycles of learning continue on feature sizes down to 22nm.

Line-frequency doubling of directed self-assembly patterns for single-digit bit pattern media lithography

NASA Astrophysics Data System (ADS)

Patel, K. C.; Ruiz, R.; Lille, J.; Wan, L.; Dobiz, E.; Gao, H.; Robertson, N.; Albrecht, T. R.

2012-03-01

Directed self-assembly is emerging as a promising technology to define sub-20nm features. However, a straightforward path to scale block copolymer lithography to single-digit fabrication remains challenging given the diverse material properties found in the wide spectrum of self-assembling materials. A vast amount of block copolymer research for industrial applications has been dedicated to polystyrene-b-methyl methacrylate (PS-b-PMMA), a model system that displays multiple properties making it ideal for lithography, but that is limited by a weak interaction parameter that prevents it from scaling to single-digit lithography. Other block copolymer materials have shown scalability to much smaller dimensions, but at the expense of other material properties that could delay their insertion into industrial lithographic processes. We report on a line doubling process applied to block copolymer patterns to double the frequency of PS-b-PMMA line/space features, demonstrating the potential of this technique to reach single-digit lithography. We demonstrate a line-doubling process that starts with directed self-assembly of PS-b-PMMA to define line/space features. This pattern is transferred into an underlying sacrificial hard-mask layer followed by a growth of self-aligned spacers which subsequently serve as hard-masks for transferring the 2x frequency doubled pattern to the underlying substrate. We applied this process to two different block copolymer materials to demonstrate line-space patterns with a half pitch of 11nm and 7nm underscoring the potential to reach single-digit critical dimensions. A subsequent patterning step with perpendicular lines can be used to cut the fine line patterns into a 2-D array of islands suitable for bit patterned media. Several integration challenges such as line width control and line roughness are addressed.

Repair of high performance multilayer coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaines, D.P.; Ceglio, N.M.; Vernon, S.P.

1991-07-01

Fabrication and environmental damage issues may require that the multilayer x-ray reflection coatings used in soft x-ray projection lithography be replaced or repaired. Two repair strategies were investigated. The first was to overcoat defective multilayers with a new multilayer. The feasibility of this approach was demonstrated by depositing high reflectivity (61% at 130 {Angstrom}) molybdenum silicon (Mo/Si) multilayers onto fused silica figured optics that had already been coated with a Mo/Si multilayer. Because some types of damage mechanisms and fabrication errors are not repairable by this method, a second method of repair was investigated. The multilayer was stripped from themore » optical substrate by etching a release layer which was deposited onto the substrate beneath the multilayer. The release layer consisted of a 1000 {Angstrom} aluminum film deposited by ion beam sputtering or by electron beam evaporation, with a 300 {Angstrom} SiO{sub 2} protective overcoat. The substrates were superpolished zerodur optical flats. The normal incidence x-ray reflectivity of multilayers deposited on these aluminized substrates was degraded, presumably due to the roughness of the aluminum films. Multilayers, and the underlying release layers, have been removed without damaging the substrates.« less

Fabrication of three-dimensional millimeter-height structures using direct ultraviolet lithography on liquid-state photoresist for simple and fast manufacturing

NASA Astrophysics Data System (ADS)

Kim, Jungkwun; Yoon, Yong-Kyu

2015-07-01

A rapid three-dimensional (3-D) ultraviolet (UV) lithography process for the fabrication of millimeter-tall high aspect ratio complex structures is presented. The liquid-state negative-tone photosensitive polyurethane, LF55GN, has been directly photopatterned using multidirectionally projected UV light for 3-D micropattern formation. The proposed lithographic scheme enabled us to overcome the maximum height obtained with a photopatternable epoxy, SU8, which has been conventionally most commonly used for the fabrication of tall and high aspect ratio microstructures. Also, the fabrication process time has been significantly reduced by eliminating photoresist-baking steps. Computer-controlled multidirectional UV lithography has been employed to fabricate 3-D structures, where the UV-exposure substrate is dynamically tilt-rotating during UV exposure to create various 3-D ray traces in the polyurethane layer. LF55GN has been characterized to provide feasible fabrication conditions for the multidirectional UV lithography. Very tall structures including a 6-mm tall triangular slab and a 5-mm tall hexablaze have been successfully fabricated. A 4.5-mm tall air-lifted polymer-core bowtie monopole antenna, which is the tallest monopole structure fabricated by photolithography and subsequent metallization, has been successfully demonstrated. The antenna shows a resonant radiation frequency of 12.34 GHz, a return loss of 36 dB, and a 10 dB bandwidth of 7%.

Magnetic measurements of the XLS magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solomon, L.; Galayda, J.; Sylvester, C.

1991-01-01

The magnets designed and built for Phase 1 (200MeV) of the XLS (X-Ray Lithography Source) project have all been measured and characterized. In this paper, the measurement system designed and utilized for the Phase 1 180 degree dipole magnets is reviewed. Hall probe measurements of the two dipole magnets, with a field of 1.1 Tesla at 1200 amperes, are discussed and presented. Phase 2 (700MeV) of this project includes replacement of the two room temperature dipole magnets with superconducting dipoles (3.9Tesla). 3 figs., 1 tab.

Construction and operation of a support facilities (Building 729) for operation/testing of a prototype accelerator/storage ring (XLS) and machine shop for the National Synchrotron Light Source at Brookhaven National Laboratory, Upton, New York

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1992-06-01

Proposed action is to construct at BNL a 5,600-ft[sup 2] support building, install and operate a prototypic 200 MeV accelerator and a prototypic 700 MeV storage ring within, and to construct and operate a 15 kV substation to power the building. The accelerator and storage ring would comprise the x-ray lithography source or XLS.

Construction and operation of a support facilities (Building 729) for operation/testing of a prototype accelerator/storage ring (XLS) and machine shop for the National Synchrotron Light Source at Brookhaven National Laboratory, Upton, New York. Environmental assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1992-06-01

Proposed action is to construct at BNL a 5,600-ft{sup 2} support building, install and operate a prototypic 200 MeV accelerator and a prototypic 700 MeV storage ring within, and to construct and operate a 15 kV substation to power the building. The accelerator and storage ring would comprise the x-ray lithography source or XLS.

Performance of the ALTA 3500 scanned-laser mask lithography system

NASA Astrophysics Data System (ADS)

Buck, Peter D.; Buxbaum, Alex H.; Coleman, Thomas P.; Tran, Long

1998-09-01

The ALTA 3500, an advanced scanned-laser mask lithography tool produced by Etec, was introduced to the marketplace in September 1997. The system architecture was described and an initial performance evaluation was presented. This system, based on the ALTA 3000, uses a new 33.3X, 0.8 NA final reduction lens to reduce the spot size to 0.27 micrometers FWHM, thereby affording improved resolution and pattern acuity on the mask. To take advantage of the improved resolution, a new anisotropic chrome etch process has been developed and introduced along with change from Olin 895i resist to TOK iP3600 resist. In this paper we will more extensively describe the performance of the ALTA 3500 and the performance of these new processes.

Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

NASA Astrophysics Data System (ADS)

Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

2017-08-01

Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Report on the 18th International Conference on X-ray and Inner-Shell Processes (X99).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gemmell, D. S.; Physics

2000-01-01

The 18th conference of the series served as a forum for discussing fundamental issues in the field of x-ray and inner-shell processes and their application in various disciplines of science and technology. Special emphasis was given to the opportunities offered by modern synchrotron x-ray sources. The program included plenary talks, progress reports and poster presentations relating to new developments in the field of x-ray and inner-shell processes. The range of topics included: X-ray interactions with atoms, molecules, clusters, surfaces and solids; Decay processes for inner-shell vacancies; X-ray absorption and emission spectroscopy - Photoionization processes; Phenomena associated with highly charged ionsmore » and collisions with energetic particles; Electron-spin and -momentum spectroscopy; X-ray scattering and spectroscopy in the study of magnetic systems; Applications in materials science, biology, geosciences, and other disciplines; Elastic and inelastic x-ray scattering processes in atoms and molecules; Threshold phenomena (post-collision interaction, resonant Raman processes, etc.); Nuclear absorption and scattering of x-rays; 'Fourth-generation' x-ray sources; Processes exploiting the polarization and coherence properties of x-ray beams; Developments in experimental techniques (x-ray optics, temporal techniques, detectors); Microscopy, spectromicroscopy, and various imaging techniques; Non-linear processes and x-ray lasers; Ionization and excitation induced by charged particles and by x-rays; and Exotic atoms (including 'hollow' atoms and atoms that contain 'exotic' particles).« less

Advanced coatings for next generation lithography

NASA Astrophysics Data System (ADS)

Naujok, P.; Yulin, S.; Kaiser, N.; Tünnermann, A.

2015-03-01

Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.

On the alignment and focusing of the Marshall Grazing Incidence X-ray Spectrometer (MaGIXS)

NASA Astrophysics Data System (ADS)

Champey, Patrick; Winebarger, Amy; Kobayashi, Ken; Savage, Sabrina; Cirtain, Jonathan; Cheimets, Peter; Hertz, Edward; Golub, Leon; Ramsey, Brian; McCracken, Jeff; Marquez, Vanessa; Allured, Ryan; Heilmann, Ralf K.; Schattenburg, Mark; Bruccoleri, Alexander

2016-07-01

The Marshall Grazing Incidence X-ray Spectrometer (MaGIXS) is a NASA sounding rocket instrument that is designed to observe soft X-ray emissions from 24 - 6.0 Å (0.5 - 2.0 keV energies) in the solar atmosphere. For the first time, high-temperature, low-emission plasma will be observed directly with 5 arcsecond spatial resolution and 22 mÅ spectral resolution. The unique optical design consists of a Wolter - I telescope and a 3-optic grazing- incidence spectrometer. The spectrometer utilizes a finite conjugate mirror pair and a blazed planar, varied line spaced grating, which is directly printed on a silicon substrate using e-beam lithography. The grating design is being finalized and the grating will be fabricated by the Massachusetts Institute of Technology (MIT) and Izentis LLC. Marshall Space Flight Center (MSFC) is producing the nickel replicated telescope and spectrometer mirrors using the same facilities and techniques as those developed for the ART-XC and FOXSI mirrors. The Smithsonian Astrophysical Observatory (SAO) will mount and align the optical sub-assemblies based on previous experience with similar instruments, such as the Hinode X-Ray Telescope (XRT). The telescope and spectrometer assembly will be aligned in visible light through the implementation of a theodolite and reference mirrors, in addition to the centroid detector assembly (CDA) - a device designed to align the AXAF-I nested mirrors. Focusing of the telescope and spectrometer will be achieved using the X-ray source in the Stray Light Facility (SLF) at MSFC. We present results from an alignment sensitivity analysis performed on the on the system and we also discuss the method for aligning and focusing MaGIXS.

On the Alignment and Focusing of the Marshall Grazing Incidence X-ray Spectrometer (MaGIXS)

NASA Technical Reports Server (NTRS)

Champey, Patrick; Winebarger, Amy; Kobayashi, Ken; Savage, Sabrina; Cirtain, Jonathan; Cheimets, Peter; Hertz, Edward; Golub, Leon; Ramsey, Brian; McCracken, Jeff

2016-01-01

The Marshall Grazing Incidence X-ray Spectrometer (MaGIXS) is a NASA sounding rocket instrument that is designed to observe soft X-ray emissions from 24 - 6.0 A (0.5 - 2.0 keV energies) in the solar atmosphere. For the rst time, high-temperature, low-emission plasma will be observed directly with 5 arcsecond spatial resolution and 22 mA spectral resolution. The unique optical design consists of a Wolter - I telescope and a 3-optic grazing- incidence spectrometer. The spectrometer utilizes a nite conjugate mirror pair and a blazed planar, varied line spaced grating, which is directly printed on a silicon substrate using e-beam lithography. The grating design is being nalized and the grating will be fabricated by the Massachusetts Institute of Technology (MIT) and Izentis LLC. Marshall Space Flight Center (MSFC) is producing the nickel replicated telescope and spectrometer mirrors using the same facilities and techniques as those developed for the ART-XC and FOXSI mirrors. The Smithsonian Astrophysical Observatory (SAO) will mount and align the optical sub-assemblies based on previous experience with similar instruments, such as the Hinode X-Ray Telescope (XRT). The telescope and spectrometer assembly will be aligned in visible light through the implementation of a theodolite and reference mirrors, in addition to the centroid detector assembly (CDA) { a device designed to align the AXAF-I nested mirrors. Focusing of the telescope and spectrometer will be achieved using the X-ray source in the Stray Light Facility (SLF) at MSFC. We present results from an alignment sensitivity analysis performed on the on the system and we also discuss the method for aligning and focusing MaGIXS.

Lithography alternatives meet design style reality: How do they "line" up?

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to set the channel length of select and memory transistors.

Fabrication and Characterization of Thin Film Nickel Hydroxide Electrodes for Micropower Applications.

PubMed

Falahati, Hamid; Kim, Edward; Barz, Dominik P J

2015-06-17

The utilization of micropower sources is attractive in portable microfluidic devices where only low-power densities and energy contents are required. In this work, we report on the microfabrication of patterned α-Ni(OH)2 films on glass substrates which can be used for rechargeable microbatteries as well as for microcapacitors. A multilayer deposition technique is developed based on e-beam evaporation, ultraviolet lithography, and electroplating/electrodeposition which creates thin-film electrodes that are patterned with arrays of micropillars. The morphology and the structure of the patterned electrode films are characterized by employing field emission scanning electron microscopy. The chemical (elemental) composition is investigated by using X-ray diffraction and X-ray photoelectron spectroscopy. Finally, cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge/discharge measurements are used to evaluate the electrochemical performance of the patterned thin film electrodes compared to patternless electrodes. We observe that patterning of the electrodes results in significantly improved stability and, thus, longer endurance while good electrochemical performance is maintained.

High-resolution x-ray absorption spectroscopy studies of metal compounds in neurodegenerative brain tissue

NASA Astrophysics Data System (ADS)

Collingwood, J. F.; Mikhaylova, A.; Davidson, M. R.; Batich, C.; Streit, W. J.; Eskin, T.; Terry, J.; Barrea, R.; Underhill, R. S.; Dobson, J.

2005-01-01

Fluorescence mapping and microfocus X-ray absorption spectroscopy are used to detect, locate and identify iron biominerals and other inorganic metal accumulations in neurodegenerative brain tissue at sub-cellular resolution (<5 microns). Recent progress in developing the technique is reviewed. Synchrotron X-rays are used to map tissue sections for metals of interest, and XANES and XAFS are used to characterise anomalous concentrations of the metals in-situ so that they can be correlated with tissue structures and disease pathology. Iron anomalies associated with biogenic magnetite, ferritin and haemoglobin are located and identified in an avian tissue model with a pixel resolution ~5 microns. Subsequent studies include brain tissue sections from transgenic Huntington's mice, and the first high-resolution mapping and identification of iron biominerals in human Alzheimer's and control autopsy brain tissue. Technical developments include use of microfocus diffraction to obtain structural information about biominerals in-situ, and depositing sample location grids by lithography for the location of anomalies by conventional microscopy. The combined techniques provide a breakthrough in the study of both intra- and extra-cellular iron compounds and related metals in tissue. The information to be gained from this approach has implications for future diagnosis and treatment of neurodegeneration, and for our understanding of the mechanisms involved.

Manufacturability of the X Architecture at the 90-nm technology node

NASA Astrophysics Data System (ADS)

Smayling, Michael C.; Sarma, Robin C.; Nagata, Toshiyuki; Arora, Narain; Duane, Michael P.; Oemardani, Shiany; Shah, Santosh

2004-05-01

In this paper, we discuss the results from a test chip that demonstrate the manufacturability and integration-worthiness of the X Architecture at the 90-nm technology node. We discuss how a collaborative effort between the design and chip making communities used the current generation of mask, lithography, wafer processing, inspection and metrology equipment to create 45 degree wires in typical metal pitches for the upper layers on a 90-nm device in a production environment. Cadence Design Systems created the test structure design and chip validation tools for the project. Canon"s KrF ES3 and ArF AS2 scanners were used for the lithography. Applied Materials used its interconnect fabrication technologies to produce the multilayer copper, low-k interconnect on 300-mm wafers. The results were confirmed for critical dimension and defect levels using Applied Materials" wafer inspection and metrology systems.

Summaries of Papers Presented at the Short Wavelength Coherent Radiation: Generation and Applications Topical Meeting Held in Cape Cod, Massachusetts on September 26-29, 1988

DTIC Science & Technology

1989-03-01

characteristics of the plasma. (p. 75) xi Hx transition at 54.19 A is reported. (p. 86) TuC20 Quantum Mechanical Interference in Four-Wave TuC28 Gain Measurement...E.MixingtK.ctivH.iBaldwinenAustralean Ntwoiofenal untue Miura. Y. Kitagawa, K. Nishihara, Y. Kato. H. Nishimura. C. and destructive interference between...Incidence Optics for Synchrotron TuC25 Spectra of Lead, Bismuth, Thorium, and Uranium X-Ray Lithography , R. J. Rosser, P. M. J. H. Wormell, R

Numerical modeling of fluid and electrical currents through geometries based on synchrotron X-ray tomographic images of reservoir rocks using Avizo and COMSOL

NASA Astrophysics Data System (ADS)

Bird, M. B.; Butler, S. L.; Hawkes, C. D.; Kotzer, T.

2014-12-01

The use of numerical simulations to model physical processes occurring within subvolumes of rock samples that have been characterized using advanced 3D imaging techniques is becoming increasingly common. Not only do these simulations allow for the determination of macroscopic properties like hydraulic permeability and electrical formation factor, but they also allow the user to visualize processes taking place at the pore scale and they allow for multiple different processes to be simulated on the same geometry. Most efforts to date have used specialized research software for the purpose of simulations. In this contribution, we outline the steps taken to use commercial software Avizo to transform a 3D synchrotron X-ray-derived tomographic image of a rock core sample to an STL (STereoLithography) file which can be imported into the commercial multiphysics modeling package COMSOL. We demonstrate that the use of COMSOL to perform fluid and electrical current flow simulations through the pore spaces. The permeability and electrical formation factor of the sample are calculated and compared with laboratory-derived values and benchmark calculations. Although the simulation domains that we were able to model on a desk top computer were significantly smaller than representative elementary volumes, and we were able to establish Kozeny-Carman and Archie's Law trends on which laboratory measurements and previous benchmark solutions fall. The rock core samples include a Fountainebleau sandstone used for benchmarking and a marly dolostone sampled from a well in the Weyburn oil field of southeastern Saskatchewan, Canada. Such carbonates are known to have complicated pore structures compared with sandstones, yet we are able to calculate reasonable macroscopic properties. We discuss the computing resources required.

Bit-mapped Holograms Using Phase Transition Mastering (PTM) and Blu-ray Disks

NASA Astrophysics Data System (ADS)

Barnhart, Donald

2013-02-01

Due to recent advances made in data storage, cloud computing, and Blu-ray mastering technology, it is now straight forward to calculate, store, transfer, and print bitmapped holograms that use terabytes of data and tera-pixels of information. This presentation reports on the potential of using the phase transition mastering (PTM) process to construct bitmapped, computer generated holograms with spatial resolutions of 5000 line-pairs/mm (70 nm pixel width). In particular, for Blu-ray disk production, Sony has developed a complete process that could be alternately deployed in holographic applications. The PTM process uses a 405 nm laser to write phase patterns onto a layer of imperfect transition metal oxides that is deposited onto an 8 inch silicon wafer. After the master hologram has been constructed, its imprint can then be cheaply mass produced with the same process as Blu-ray disks or embossed holograms. Unlike traditional binary holograms made with expensive e-beam lithography, the PTM process has the potential for multiple phase levels using inexpensive optics similar to consumer-grade desktop Blu-ray writers. This PTM process could revolutionise holography for entertainment, industrial, and scientific applications.

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

NASA Astrophysics Data System (ADS)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Photochemical conversion of tin-oxo cage compounds studied using hard x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Zhang, Yu; Haitjema, Jarich; Liu, Xiaomeng; Johansson, Fredrik; Lindblad, Andreas; Castellanos, Sonia; Ottosson, Niklas; Brouwer, Albert M.

2017-03-01

Several metal-containing molecular inorganic materials are currently considered as photoresists for extreme ultraviolet lithography (EUVL). This is primarily due to their high EUV absorption cross section and small building block size, properties which potentially allow both high sensitivity and resolution as well as low line-edge roughness. The photochemical reaction mechanisms that allow these kinds of materials to function as photoresists, however, are still poorly understood. As a step in this direction, we here discuss photochemical reactions upon deep UV (DUV) irradiation of a model negative-tone EUV photoresist material, namely the well-defined molecular tin-oxo cage compound [(SnR)12O14(OH)6]X2 (R = organic group; X = anion) which is spin coated to thin layers of 20 nm. The core electronic structure (Sn 3d, O 1s and C 1s) of fresh and DUV exposed films were then investigated using synchrotron radiationbased hard X-ray photoelectron spectroscopy (HAXPES). This method provides information about the structure and chemical state of the respective atoms in the material. We performed a comparative HAXPES study of the composition of the tin-oxo cage compound [(SnR)12O14(OH)6](OH)2, either fresh directly after spin-coated vs. DUV-exposed materials under either ambient condition or under a dry N2 atmosphere. Different chemical oxidation states and concentrations of atoms and atom types in the fresh and exposed films were found. We further found that the chemistry resulting from exposure in air and N2 is strikingly different, clearly illustrating the influence of film-gas interactions on the (photo)chemical processes that eventually determine the photoresist. Finally, a mechanistic hypothesis for the basic DUV photoreactions in molecular tin-oxo cages is proposed.

Simultaneous multiplexed materials characterization using a high-precision hard X-ray micro-slit array.

PubMed

Zhang, Fan; Allen, Andrew J; Levine, Lyle E; Mancini, Derrick C; Ilavsky, Jan

2015-05-01

The needs both for increased experimental throughput and for in operando characterization of functional materials under increasingly realistic experimental conditions have emerged as major challenges across the whole of crystallography. A novel measurement scheme that allows multiplexed simultaneous measurements from multiple nearby sample volumes is presented. This new approach enables better measurement statistics or direct probing of heterogeneous structure, dynamics or elemental composition. To illustrate, the submicrometer precision that optical lithography provides has been exploited to create a multiplexed form of ultra-small-angle scattering based X-ray photon correlation spectroscopy (USAXS-XPCS) using micro-slit arrays fabricated by photolithography. Multiplexed USAXS-XPCS is applied to follow the equilibrium dynamics of a simple colloidal suspension. While the dependence of the relaxation time on momentum transfer, and its relationship with the diffusion constant and the static structure factor, follow previous findings, this measurements-in-parallel approach reduces the statistical uncertainties of this photon-starved technique to below those associated with the instrument resolution. More importantly, we note the potential of the multiplexed scheme to elucidate the response of different components of a heterogeneous sample under identical experimental conditions in simultaneous measurements. In the context of the X-ray synchrotron community, this scheme is, in principle, applicable to all in-line synchrotron techniques. Indeed, it has the potential to open a new paradigm for in operando characterization of heterogeneous functional materials, a situation that will be even further enhanced by the ongoing development of multi-bend achromat storage ring designs as the next evolution of large-scale X-ray synchrotron facilities around the world.

Simultaneous multiplexed materials characterization using a high-precision hard X-ray micro-slit array

DOE PAGES

Zhang, Fan; Allen, Andrew J.; Levine, Lyle E.; ...

2015-01-01

Here, the needs both for increased experimental throughput and forin operandocharacterization of functional materials under increasingly realistic experimental conditions have emerged as major challenges across the whole of crystallography. A novel measurement scheme that allows multiplexed simultaneous measurements from multiple nearby sample volumes is presented. This new approach enables better measurement statistics or direct probing of heterogeneous structure, dynamics or elemental composition. To illustrate, the submicrometer precision that optical lithography provides has been exploited to create a multiplexed form of ultra-small-angle scattering based X-ray photon correlation spectroscopy (USAXS-XPCS) using micro-slit arrays fabricated by photolithography. Multiplexed USAXS-XPCS is applied to followmore » the equilibrium dynamics of a simple colloidal suspension. While the dependence of the relaxation time on momentum transfer, and its relationship with the diffusion constant and the static structure factor, follow previous findings, this measurements-in-parallel approach reduces the statistical uncertainties of this photon-starved technique to below those associated with the instrument resolution. More importantly, we note the potential of the multiplexed scheme to elucidate the response of different components of a heterogeneous sample underidenticalexperimental conditions in simultaneous measurements. Lastly, in the context of the X-ray synchrotron community, this scheme is, in principle, applicable to all in-line synchrotron techniques. Indeed, it has the potential to open a new paradigm for in operando characterization of heterogeneous functional materials, a situation that will be even further enhanced by the ongoing development of multi-bend achromat storage ring designs as the next evolution of large-scale X-ray synchrotron facilities around the world.« less

Design of the ultraprecision stage for lithography using VCM

NASA Astrophysics Data System (ADS)

Kim, Jung-Han; Kim, Mun-Su; Oh, Min-Taek

2007-12-01

This paper presents a new design of precision stage for the reticle in lithography process and a low hunting control method for the stage. The stage has three axes for X,Y, θ Z, those actuated by three voice coil motors individually. The proposed precision stage system has three gap sensors and voice coil motors, and supported by four air bearings, so it do not have any mechanical contact and nonlinear effect such as hysterisis which usually degrade performance in nano level movement. The reticle stage has cross coupled dynamics between X,Y,θ Z, axes, so the forward and inverse kinematics were solved to get an accurate reference position. When the stage is in regulating control mode, there always exist small fluctuations (stage hunting) in the stage movement. Because the low stage hunting characteristic is very important in recent lithography and nano-level applications, the proposed stage has a special regulating controller composed of digital filter, adjustor and switching algorithm. Another importance factor that generates hunting noise is the system noise inside the lithography machine such as EMI from another motor and solenoids. For reducing such system noises, the proposed controller has a two-port transmission system that transfers torque command signal from the DSP board to the amplifier. The low hunting control algorithm and two-port transmission system reduced hunting noise as 35nm(rms) when a conventional PID generates 77nm(rms) in the same mechanical system. The experimental results showed that the reticle system has 100nm linear accuracy and 1μ rad rotation accuracy at the control frequency of 8 kHz.

Immersion lithography defectivity analysis at DUV inspection wavelength

NASA Astrophysics Data System (ADS)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

PubMed

Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

2007-03-01

The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

PMJ 2007 panel discussion overview: double exposure and double patterning for 32-nm half-pitch design node

NASA Astrophysics Data System (ADS)

Nagaoka, Yoshinori; Watanabe, Hidehiro

2007-10-01

As part of the technical program in Photomask Japan 2007, we held a panel discussion to discuss challenges and solutions for the double exposure and double patterning lithography technique for 32nm half-pitch design node. 4 panelists, Rik Jonckheere of IMEC, Belgium), Tsann-Binn Chiou of ASML Taiwan Ltd., Taiwan), Judy Huckabay of Cadence Design Systems Inc. (USA) and Yoshimitsu Okuda of Toppan Printing Co., Ltd., Japan) were invited to represent each key technical area. We also took a survey from the PMJ attendees prior to the panel discussion, to vote which key technical area they think the challenge exists for the 32nm half-pitch DE/DP lithography. The result of the survey was also presented during the panel discussion. One would intuitively think that by using a DE/DP technique you're relaxing the design rule by 2x, thus for 32nm node it's essentially the 65nm process- you're just repeating it 2 times. Well, not exactly, as identified by the panelists and the participants in the discussion. We recognized the difficulties in the LSI fabrication process steps, the lithography tool overlay, photomask CD and registration, and the issue of data splitting conflict. These difficulties are big challenge for both LSI and photomask manufactures; however, we have confirmed some solutions are already examined by the theoretical and experimental works of the people in research. Despite these difficulties, we are convinced that the immersion lithography with double exposure and double patterning techniques is one of the most promising candidates of the lithography for 32nm half pitch design node.

Pattern fidelity in nanoimprinted films using CD-SAXS

NASA Astrophysics Data System (ADS)

Jones, Ronald L.; Soles, Christopher L.; Lin, Eric K.; Hu, Walter; Reano, Ronald M.; Pang, Stella W.; Weigand, Steven J.; Keane, Denis T.; Quintana, John P.

2005-05-01

The primary measure of process quality in nanoimprint lithography (NIL) is the fidelity of pattern transfer, comparing the dimensions of the imprinted pattern to those of the mold. As a potential next generation lithography, NIL is capable of true nanofabrication, producing patterns of sub-10 nm dimensions. Routine production of nanoscale patterns will require new metrologies capable of non-destructive dimensional measurements of both the mold and the pattern with sub-nm precision. In this article, a rapid, non-destructive technique termed Critical Dimension Small Angle X-ray Scattering (CD-SAXS) is used to measure the cross sectional shape of both a pattern master, or mold, and the resulting imprinted films. CD-SAXS data are used to extract periodicity as well as pattern height, width, and sidewall angles. Films of varying materials are molded by thermal embossed NIL at temperatures both near and far from the bulk glass transition (TG). The polymer systems include a photoresist, representing a mixture of a polymer and small molecular components, and two pure homopolymers. Molding at low temperatures (T-TG < 40°C) produces small aspect ratio patterns that maintain periodicity to within a single nanometer, but feature large sidewall angles. While the pattern height does not reach that of the mold until very large imprinting temperatures (T-TG ~ 70°C), the pattern width of the mold is accurately transferred for T-TG > 30°C. In addition to obtaining basic dimensions, CD-SAXS data are used to assess the origin of loss in pattern fidelity.

Wave front engineering by means of diffractive optical elements for applications in microscopy

NASA Astrophysics Data System (ADS)

Cojoc, Dan; Ferrari, Enrico; Garbin, Valeria; Cabrini, Stefano; Carpentiero, Alessandro; Prasciolu, Mauro; Businaro, Luca; Kaulich, Burchard; Di Fabrizio, Enzo

2006-05-01

We present a unified view regarding the use of diffractive optical elements (DOEs) for microscopy applications a wide range of electromagnetic spectrum. The unified treatment is realized through the design and fabrication of DOE through which wave front beam shaping is obtained. In particular we show applications ranging from micromanipulation using optical tweezers to X-ray differential interference contrast (DIC) microscopy. We report some details on the design and physical implementation of diffractive elements that beside focusing perform also other optical functions: beam splitting, beam intensity and phase redistribution or mode conversion. Laser beam splitting is used for multiple trapping and independent manipulation of spherical micro beads and for direct trapping and manipulation of biological cells with non-spherical shapes. Another application is the Gauss to Laguerre-Gaussian mode conversion, which allows to trap and transfer orbital angular momentum of light to micro particles with high refractive index and to trap and manipulate low index particles. These experiments are performed in an inverted optical microscope coupled with an infrared laser beam and a spatial light modulator for DOEs implementation. High resolution optics, fabricated by means of e-beam lithography, are demonstrated to control the intensity and the phase of the sheared beams in X-ray DIC microscopy. DIC experiments with phase objects reveal a dramatic increase in image contrast compared to bright-field X-ray microscopy.

Large-area metallic photonic lattices for military applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luk, Ting Shan

2007-11-01

In this project we developed photonic crystal modeling capability and fabrication technology that is scaleable to large area. An intelligent optimization code was developed to find the optimal structure for the desired spectral response. In terms of fabrication, an exhaustive survey of fabrication techniques that would meet the large area requirement was reduced to Deep X-ray Lithography (DXRL) and nano-imprint. Using DXRL, we fabricated a gold logpile photonic crystal in the <100> plane. For the nano-imprint technique, we fabricated a cubic array of gold squares. These two examples also represent two classes of metallic photonic crystal topologies, the connected networkmore » and cermet arrangement.« less

Ramp compression of magnesium oxide to 234 GPa

DOE PAGES

Wang, Jue; Smith, R. F.; Coppari, F.; ...

2014-05-07

Single-crystal magnesium oxide (MgO) samples were ramp compressed to above 200 GPa pressure at the Omega laser facility. Multi-stepped MgO targets were prepared using lithography and wet etching techniques. Free surface velocities of ramp-compressed MgO were measured with a VISAR. The sound velocity and stress-density response were determined using an iterative Lagrangian analysis. The measured equation of state is consistent with expectations from previous shock and static data as well as with a recent X-ray diffraction measurement under ramp loading. The peak elastic stresses observed in our samples had amplitudes of 3-5.5 GPa, decreasing with propagation distance.

Focused ion beam direct micromachining of DOEs

NASA Astrophysics Data System (ADS)

Khan Malek, Chantal; Hartley, Frank T.; Neogi, Jayant

2000-09-01

We discuss here the capability of direct manufacture of various high- resolution diffractive optics, in particular regarding micromachining of DOEs in 3D. Preliminary demonstrations were made in 2-D using an automated FIB system operated at 30 KeV with a Gallium liquid metal ion source and equipped with a gas injection system (GIS). Gratings with a 20 nm line width and zone plates with 32 nm outer ring were milled in a reactive atmosphere (iodine) directly through 3.5 (mu) m and 800 nm of gold respectively. Plans for combining FIB and X-ray lithography to make diffractive optical elements (DOEs) for JPL are also mentioned.

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

NASA Astrophysics Data System (ADS)

Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

2017-12-01

We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon

NASA Astrophysics Data System (ADS)

Yan, Yingchao; Faber, Anne J.; de Waal, Henk

1996-01-01

RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.

Diazonium Chemistry for the Bio-Functionalization of Glassy Nanostring Resonator Arrays

PubMed Central

Zheng, Wei; Du, Rongbing; Cao, Yong; Mohammad, Mohammad A.; Dew, Steven K.; McDermott, Mark T.; Evoy, Stephane

2015-01-01

Resonant glassy nanostrings have been employed for the detection of biomolecules. These devices offer high sensitivity and amenability to large array integration and multiplexed assays. Such a concept has however been impaired by the lack of stable and biocompatible linker chemistries. Diazonium salt reduction-induced aryl grafting is an aqueous-based process providing strong chemical adhesion. In this work, diazonium-based linker chemistry was performed for the first time on glassy nanostrings, which enabled the bio-functionalization of such devices. Large arrays of nanostrings with ultra-narrow widths down to 10 nm were fabricated employing electron beam lithography. Diazonium modification was first developed on SiCN surfaces and validated by X-ray photoelectron spectroscopy. Similarly modified nanostrings were then covalently functionalized with anti-rabbit IgG as a molecular probe. Specific enumeration of rabbit IgG was successfully performed through observation of downshifts of resonant frequencies. The specificity of this enumeration was confirmed through proper negative control experiments. Helium ion microscopy further verified the successful functionalization of nanostrings. PMID:26263989

Diazonium Chemistry for the Bio-Functionalization of Glassy Nanostring Resonator Arrays.

PubMed

Zheng, Wei; Du, Rongbing; Cao, Yong; Mohammad, Mohammad A; Dew, Steven K; McDermott, Mark T; Evoy, Stephane

2015-07-30

Resonant glassy nanostrings have been employed for the detection of biomolecules. These devices offer high sensitivity and amenability to large array integration and multiplexed assays. Such a concept has however been impaired by the lack of stable and biocompatible linker chemistries. Diazonium salt reduction-induced aryl grafting is an aqueous-based process providing strong chemical adhesion. In this work, diazonium-based linker chemistry was performed for the first time on glassy nanostrings, which enabled the bio-functionalization of such devices. Large arrays of nanostrings with ultra-narrow widths down to 10 nm were fabricated employing electron beam lithography. Diazonium modification was first developed on SiCN surfaces and validated by X-ray photoelectron spectroscopy. Similarly modified nanostrings were then covalently functionalized with anti-rabbit IgG as a molecular probe. Specific enumeration of rabbit IgG was successfully performed through observation of downshifts of resonant frequencies. The specificity of this enumeration was confirmed through proper negative control experiments. Helium ion microscopy further verified the successful functionalization of nanostrings.

Future reticle demand and next-generation lithography technologies

NASA Astrophysics Data System (ADS)

Behringer, Uwe F. W.; Ehrlich, Christian; Fortange, Olaf

1999-04-01

Mask technology has often been considered an enabling for semiconductor fabrication. But today photomasks have evolved to a bottle neck in the every increasing integration process of semiconductor circuits. Regarding to the 1997 SIA roadmap there are very stringent requirements for mask making. Even with the momentary weak Asian market the worldwide demand for reticles will continue to grow. The anticipation of larger reticles has been discussed over years. What ever the reason for the need of larger reticles, the move to the 230 mm X 230 mm reticle size will provide size will provide unique challenges to both the mask equipment manufacturers and mask fabricator. Next Generation Lithography together with their mask techniques are in development and try to come into the market.

[Development of X-ray Reflection Grating Technology for the Constellation-X Mission

NASA Technical Reports Server (NTRS)

Schattenburg, Mark L.

2005-01-01

This Grant supports MIT technology development of x-ray reflection gratings for the Constellation-X Reflection Grating Spectrometer (RGS). Since the start of the Grant MIT has extended its previously-developed patterning and super-smooth, blazed grating fabrication technology to ten-times smaller grating periods and ten-times larger blaze angles to demonstrate feasibility and performance in the off-plane grating geometry. In the past year we have focused our efforts on extending our Nanoruler grating fabrication tool to enable it to perform variable-period scanning-beam interference lithography (VP-SBIL). This new capability required extensive optical and mechanical improvements to the system. The design phase of this work is largely completed and key components are now on order and assembly has begun. Over the next several months the new VP-SBIL Nanoruler system will be completed and testing begun. We have also demonstrated a new technique for patterning gratings using the Nanoruler called Doppler mode, which will be important for patterning the radial groove gratings for the RGS using the new VP-SBIL system. Flat and thin grating substrates will be critical for the RGS. In the last year we demonstrated a new technique for flattening thin substrates using magneto-rheologic fluid polishing (MRF) and achieved 2 arcsecond flatness with a 0.5 mm-thick substrate-a world's record. This meets the Con X requirement for grating substrate flatness.

High resolution beam profiling of X-ray free electron laser radiation by polymer imprint development.

PubMed

Rösner, Benedikt; Döring, Florian; Ribič, Primož R; Gauthier, David; Principi, Emiliano; Masciovecchio, Claudio; Zangrando, Marco; Vila-Comamala, Joan; De Ninno, Giovanni; David, Christian

2017-11-27

High resolution metrology of beam profiles is presently a major challenge at X-ray free electron lasers. We demonstrate a characterization method based on beam imprints in poly (methyl methacrylate). By immersing the imprints formed at 47.8 eV into organic solvents, the regions exposed to the beam are removed similar to resist development in grayscale lithography. This allows for extending the sensitivity of the method by more than an order of magnitude compared to the established analysis of imprints created solely by ablation. Applying the Beer-Lambert law for absorption, the intensity distribution in a micron-sized focus can be reconstructed from one single shot with a high dynamic range, exceeding 10 3 . The procedure described here allows for beam characterization at free electron lasers revealing even faint beam tails, which are not accessible when using ablation imprint methods. We demonstrate the greatly extended dynamic range on developed imprints taken in focus of conventional Fresnel zone plates and spiral zone plates producing beams with a topological charge.

Flash X-ray with image enhancement applied to combustion events

NASA Astrophysics Data System (ADS)

White, K. J.; McCoy, D. G.

1983-10-01

Flow visualization of interior ballistic processes by use of X-rays has placed more stringent requirements on flash X-ray techniques. The problem of improving radiographic contrast of propellants in X-ray transparent chambers was studied by devising techniques for evaluating, measuring and reducing the effects of scattering from both the test object and structures in the test area. X-ray film and processing is reviewed and techniques for evaluating and calibrating these are outlined. Finally, after X-ray techniques were optimized, the application of image enhancement processing which can improve image quality is described. This technique was applied to X-ray studies of the combustion of very high burning rate (VHBR) propellants and stick propellant charges.

Fabrication of 3D SiO x structures using patterned PMMA sacrificial layer

NASA Astrophysics Data System (ADS)

Li, Zhiqin; Xiang, Quan; Zheng, Mengjie; Bi, Kaixi; Chen, Yiqin; Chen, Keqiu; Duan, Huigao

2018-02-01

Three-dimensional (3D) nanofabrication based on electron-beam lithography (EBL) has drawn wide attention for various applications with its high patterning resolution and design flexibility. In this work, we present a bilayer EBL process to obtain 3D freestanding SiO x structures via the release of the bottom sacrificial layer. This new kind of bilayer process enables us to define various 3D freestanding SiO x structures with high resolution and low edge roughness. As a proof of concept for applications, metal-coated freestanding SiO x microplates with an underlying air gap were fabricated to form asymmetric Fabry-Perot resonators, which can be utilized for colorimetric refractive index sensing and thus also have application potential for biochemical detection, anti-counterfeiting and smart active nano-optical devices.

Successful demonstration of a comprehensive lithography defect monitoring strategy

NASA Astrophysics Data System (ADS)

Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

2003-07-01

This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the widest range of sizes, from full-wafer to suboptical, and with the largest variety of characteristics. Some of these defects fall into the categories of coating problems, focus and exposure defects, developer defects, edge-bead removal problems, contamination and scratches usually defined as lithography macro defects as shown in Figure 1. Others fall into the category of lithography micro defects, Figure 2. They are characterized as having low topography such as stains, developer spots, satellites, are very small such as micro-bridging, partial micro-bridging, micro-bubbles, CD variation and single isolated missing or deformed contacts or vias. Lithography is the only area of the fab besides CMP in which defect excursions can be corrected by reworking the wafers. The opportunity to fix defect problems without scrapping wafers is best served by a defect inspection strategy that captures the full range of all relevant defect types with a proper balance between the costs of monitoring and inspection and the potential cost of yield loss. In the previous paper [1] it was shown that a combination of macro inspection and high numerical aperture (NA) brightfield imaging inspection technology is best suited for the application in the case of the idealized fab modeled. In this paper we will report on the successful efforts in implementing and validating the lithography defect monitoring strategy at two existing 200 mm factories running 0.15 μm and 0.13 μm design rules.

Molecular modeling of directed self-assembly of block copolymers: Fundamental studies of processing conditions and evolutionary pattern design

NASA Astrophysics Data System (ADS)

Khaira, Gurdaman Singh

Rapid progress in the semi-conductor industry has pushed for smaller feature sizes on integrated electronic circuits. Current photo-lithographic techniques for nanofabrication have reached their technical limit and are problematic when printing features small enough to meet future industrial requirements. "Bottom-up'' techniques, such as the directed self-assembly (DSA) of block copolymers (BCP), are the primary contenders to compliment current "top-down'' photo-lithography ones. For industrial requirements, the defect density from DSA needs to be less than 1 defect per 10 cm by 10 cm. Knowledge of both material synthesis and the thermodynamics of the self-assembly process are required before optimal operating conditions can be found to produce results adequate for industry. The work present in this thesis is divided into three chapters, each discussing various aspects of DSA as studied via a molecular model that contains the essential physics of BCP self-assembly. Though there are various types of guiding fields that can be used to direct BCPs over large wafer areas with minimum defects, this study focuses only on chemically patterned substrates. The first chapter addresses optimal pattern design by describing a framework where molecular simulations of various complexities are coupled with an advanced optimization technique to find a pattern that directs a target morphology. It demonstrates the first ever study where BCP self-assembly on a patterned substrate is optimized using a three-dimensional description of the block-copolymers. For problems pertaining to DSA, the methodology is shown to converge much faster than the traditional random search approach. The second chapter discusses the metrology of BCP thin films using TEM tomography and X-ray scattering techniques, such as CDSAXS and GISAXS. X-ray scattering has the advantage of being able to quickly probe the average structure of BCP morphologies over large wafer areas; however, deducing the BCP morphology from the information in inverse space is a challenging task. Using the optimization techniques and molecular simulations discussed in the first chapter, a methodology to reconstruct BCP morphology from X-ray scattering data is described. It is shown that only a handful of simulation parameters that come directly from experiment are able to describe the morphologies observed from real X-ray scattering experiments. The last chapter focuses on the use of solvents to assist the self-assembly of BCPs. Additional functionality to capture the process of solvent annealing is also discussed. The bulk behavior of solvated mixtures of BCPs with solvents of various affinities is described, and the results are consistent with the experimentally observed behavior of BCPs in the presence of solvents.

Double exposure technique for 45nm node and beyond

NASA Astrophysics Data System (ADS)

Hsu, Stephen; Park, Jungchul; Van Den Broeke, Douglas; Chen, J. Fung

2005-11-01

The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k1 lithography era under the pressure of ever decreasing feature sizes. Extending lithography towards lower k1 puts heavy demand on the resolution enhancement technique (RET), exposure tool, and the need for litho friendly design. Hyper numerical aperture (NA) exposure tools, immersion, and double exposure techniques (DET's) are the promising methods to extend lithography manufacturing to the 45nm node at k1 factors below 0.3. Scattering bars (SB's) have become an integral part of the lithography process as chipmakers move to production at ever lower k1 factors. To achieve better critical dimension (CD) control, polarization is applied to enhance the image contrast in the preferential imaging orientation, which increases the risk of SB printability. The optimum SB width is approximately (0.20 ~ 0.25)*(λ/NA). When the SB width becomes less than the exposure wavelength on the 4X mask, Kirchhoff's scalar theory under predicts the SB intensity. The optical weighting factor of the SB increases (Figure 1b) and the SB's become more susceptible to printing. Meanwhile, under hyper NA conditions, the effectiveness of "subresolution" SB's is significantly diminished. A full-sized scattering bars (FSB) scheme becomes necessary. Double exposure methods, such as using ternary 6% attenuated PSM (attPSM) for DDL, are good imaging solutions that can reach and likely go beyond the 45nm node. Today DDL, using binary chrome masks, is capable of printing 65 nm device patterns. In this work, we investigate the use of DET with 6% attPSM masks to target 45nm node device. The SB scalability and printability issues can be taken cared of by using "mutual trimming", i.e., with the combined energy from the two exposures. In this study, we share our findings of using DET to pattern a 45nm node device design with polarization and immersion. We also explore other double patterning methods which in addition to having two exposures, incorporates double coat/developing/etch processing to break the 0.25 k1 barrier.

Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors.

PubMed

Belianinov, Alex; Iberi, Vighter; Tselev, Alexander; Susner, Michael A; McGuire, Michael A; Joy, David; Jesse, Stephen; Rondinone, Adam J; Kalinin, Sergei V; Ovchinnikova, Olga S

2016-03-23

Rapid advances in nanoscience rely on continuous improvements of material manipulation at near-atomic scales. Currently, the workhorse of nanofabrication is resist-based lithography and its various derivatives. However, the use of local electron, ion, and physical probe methods is expanding, driven largely by the need for fabrication without the multistep preparation processes that can result in contamination from resists and solvents. Furthermore, probe-based methods extend beyond nanofabrication to nanomanipulation and to imaging which are all vital for a rapid transition to the prototyping and testing of devices. In this work we study helium ion interactions with the surface of bulk copper indium thiophosphate CuM(III)P2X6 (M = Cr, In; X= S, Se), a novel layered 2D material, with a Helium Ion Microscope (HIM). Using this technique, we are able to control ferrielectric domains and grow conical nanostructures with enhanced conductivity whose material volumes scale with the beam dosage. Compared to the copper indium thiophosphate (CITP) from which they grow, the nanostructures are oxygen rich, sulfur poor, and with virtually unchanged copper concentration as confirmed by energy-dispersive X-ray spectroscopy (EDX). Scanning electron microscopy (SEM) imaging contrast as well as scanning microwave microscopy (SMM) measurements suggest enhanced conductivity in the formed particles, whereas atomic force microscopy (AFM) measurements indicate that the produced structures have lower dissipation and are softer as compared to the CITP.

Growth and sacrificial oxidation of transition metal nanolayers

NASA Astrophysics Data System (ADS)

Tsarfati, Tim; Zoethout, Erwin; van de Kruijs, Robbert; Bijkerk, Fred

2009-04-01

Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e - donation by Mo. Au and Cu, in spite of their significantly lower surface free energy, grow in islands on Mo and actually promote Mo oxidation. Applications of the sacrificial oxidation in nanometer thin layers exist in a range of nanoscopic devices, such as nano-electronics and protection of e.g. multilayer X-ray optics for astronomy, medicine and lithography.

Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

DOEpatents

Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

1999-01-01

A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

Data sharing system for lithography APC

NASA Astrophysics Data System (ADS)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Nanoimprint lithography for nanodevice fabrication

NASA Astrophysics Data System (ADS)

Barcelo, Steven; Li, Zhiyong

2016-09-01

Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

X-ray monitoring optical elements

DOEpatents

Stoupin, Stanislav; Shvydko, Yury; Katsoudas, John; Blank, Vladimir D.; Terentyev, Sergey A.

2016-12-27

An X-ray article and method for analyzing hard X-rays which have interacted with a test system. The X-ray article is operative to diffract or otherwise process X-rays from an input X-ray beam which have interacted with the test system and at the same time provide an electrical circuit adapted to collect photoelectrons emitted from an X-ray optical element of the X-ray article to analyze features of the test system.

In the year 2525, if x ray is still alive, if lithography can survive, they may find...

NASA Astrophysics Data System (ADS)

Nistler, John L.; Michael, Mark; Hause, Fred N.; Edwards, Richard D.

1998-12-01

Data and discussions will be presented on the NTRM, National Technology Roadmap, for reticles based on a Process Integration perception. Specifically two layers are considered for this paper, the gate layer which is primarily a chrome geometry mask with a lot of open glass and a local interconnect layer which is primarily a chrome plate using clear geometries. Information from other sources is used where appropriate and actual in-house data is used to illustrate specific points. Realizing that demands from different customers for specific types of features tend to drive specific mask makers and their decisions on equipment purchases and processes. We attempt to help predict where Integration approaches have either caused a lag in technology pushes or have actually speeded up certain requirements. Discussions of integration requirements, which tend to push maskmakers, will be presented. Along with typical design approaches in OPC and PSM which either will push technology or actually slow down the trend towards smaller geometries. In addition, data will be presented showing how specific stepper characteristics may actually drive the customer's criteria, thus changing the requirements from customer to customer.

Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design

NASA Astrophysics Data System (ADS)

Fay, Aurélien; Browning, Clyde; Brandt, Pieter; Chartoire, Jacky; Bérard-Bergery, Sébastien; Hazart, Jérôme; Chagoya, Alexandre; Postnikov, Sergei; Saib, Mohamed; Lattard, Ludovic; Schavione, Patrick

2016-03-01

Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm2, compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography's machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm over an exposure dose variation of 8%.

In-Orbit Performance of the Digital Electronics for the X-Ray Microcalorimeter Onboard the Hitomi Satellite

NASA Astrophysics Data System (ADS)

Tsujimoto, M.; Tashiro, M. S.; Ishisaki, Y.; Yamada, S.; Seta, H.; Mitsuda, K.; Boyce, K. R.; Eckart, M. E.; Kilbourne, C. A.; Leutenegger, M. A.; Porter, F. S.; Kelley, R. L.

2018-03-01

The pulse shape processor is the onboard digital electronics unit of the X-ray microcalorimeter instrument—the soft X-ray spectrometer—onboard the Hitomi satellite. It processes X-ray events using the optimum filtering with limited resources. It was operated for 36 days in orbit continuously without issues and met the requirement of processing a 150 s^{-1} event rate during the observation of bright sources. Here, we present the results obtained in orbit, focusing on its performance as the onboard digital signal processing unit of an X-ray microcalorimeter.

Next generation of Z* modelling tool for high intensity EUV and soft x-ray plasma sources simulations

NASA Astrophysics Data System (ADS)

Zakharov, S. V.; Zakharov, V. S.; Choi, P.; Krukovskiy, A. Y.; Novikov, V. G.; Solomyannaya, A. D.; Berezin, A. V.; Vorontsov, A. S.; Markov, M. B.; Parot'kin, S. V.

2011-04-01

In the specifications for EUV sources, high EUV power at IF for lithography HVM and very high brightness for actinic mask and in-situ inspections are required. In practice, the non-equilibrium plasma dynamics and self-absorption of radiation limit the in-band radiance of the plasma and the usable radiation power of a conventional single unit EUV source. A new generation of the computational code Z* is currently developed under international collaboration in the frames of FP7 IAPP project FIRE for modelling of multi-physics phenomena in radiation plasma sources, particularly for EUVL. The radiation plasma dynamics, the spectral effects of self-absorption in LPP and DPP and resulting Conversion Efficiencies are considered. The generation of fast electrons, ions and neutrals is discussed. Conditions for the enhanced radiance of highly ionized plasma in the presence of fast electrons are evaluated. The modelling results are guiding a new generation of EUV sources being developed at Nano-UV, based on spatial/temporal multiplexing of individual high brightness units, to deliver the requisite brightness and power for both lithography HVM and actinic metrology applications.

Extreme ultraviolet lithography machine

DOEpatents

Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

2000-01-01

An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

Digital enhancement of X-rays for NDT

NASA Technical Reports Server (NTRS)

Butterfield, R. L.

1980-01-01

Report is "cookbook" for digital processing of industrial X-rays. Computer techniques, previously used primarily in laboratory and developmental research, have been outlined and codified into step by step procedures for enhancing X-ray images. Those involved in nondestructive testing should find report valuable asset, particularly is visual inspection is method currently used to process X-ray images.

Establishing nonlinearity thresholds with ultraintense X-ray pulses

NASA Astrophysics Data System (ADS)

Szlachetko, Jakub; Hoszowska, Joanna; Dousse, Jean-Claude; Nachtegaal, Maarten; Błachucki, Wojciech; Kayser, Yves; Sà, Jacinto; Messerschmidt, Marc; Boutet, Sebastien; Williams, Garth J.; David, Christian; Smolentsev, Grigory; van Bokhoven, Jeroen A.; Patterson, Bruce D.; Penfold, Thomas J.; Knopp, Gregor; Pajek, Marek; Abela, Rafael; Milne, Christopher J.

2016-09-01

X-ray techniques have evolved over decades to become highly refined tools for a broad range of investigations. Importantly, these approaches rely on X-ray measurements that depend linearly on the number of incident X-ray photons. The advent of X-ray free electron lasers (XFELs) is opening the ability to reach extremely high photon numbers within ultrashort X-ray pulse durations and is leading to a paradigm shift in our ability to explore nonlinear X-ray signals. However, the enormous increase in X-ray peak power is a double-edged sword with new and exciting methods being developed but at the same time well-established techniques proving unreliable. Consequently, accurate knowledge about the threshold for nonlinear X-ray signals is essential. Herein we report an X-ray spectroscopic study that reveals important details on the thresholds for nonlinear X-ray interactions. By varying both the incident X-ray intensity and photon energy, we establish the regimes at which the simplest nonlinear process, two-photon X-ray absorption (TPA), can be observed. From these measurements we can extract the probability of this process as a function of photon energy and confirm both the nature and sub-femtosecond lifetime of the virtual intermediate electronic state.

An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Settens, Charles M.

2015-01-01

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty. Synchrotron criticalmore » dimension small angle X-ray scattering (CD-SAXS) has unique capabilities to non-destructively monitor the cross-section shape of surface structures with single nanometer uncertainty and can perform overlay metrology to sub-nm uncertainty. In this dissertation, we perform a systematic experimental investigation using CD-SAXS metrology on a hierarchy of semiconductor 3D device architectures including, high-aspect-ratio contact holes, H2 annealed Si fins, and a series of grating type samples at multiple points along a FinFET fabrication process increasing in structural intricacy and ending with fully fabricated FinFET. Comparative studies between CD-SAXS metrology and other relevant semiconductor dimensional metrologies, particularly CDSEM, CD-AFM and TEM are used to determine physical limits of CD-SAXS approach for advanced semiconductor samples. CD-SAXS experimental tradeoffs, advice for model-dependent analysis and thoughts on the compatibility with a semiconductor manufacturing environment are discussed.« less

X-Ray Detector for 1 to 30 keV

NASA Technical Reports Server (NTRS)

Alcorn, G.; Jackson, J., Jr; Grant, P.; Marshall, F.

1983-01-01

Array of silicon X-ray detecting diodes measures photon energy and provides image of X-ray pattern. Regardless of thickness of new X-ray detector, depletion region extends through it. Impinging X-rays generate electrons in quantities proportional to X-ray energy. X-ray detector is mated to chargecoupled-device array for image generation and processing. Useful in industrial part inspection, pulsed-plasma research and medical application.

Soft x-ray microscopy and extreme ultraviolet lithography: Imaging in the 20-50 nm regime (abstract) (invited)

NASA Astrophysics Data System (ADS)

Attwood, David

2002-03-01

Advances in short wavelength optics, covering the range from 1 to 14 nm, are providing new results and new opportunities. Zone plate lenses [E. Anderson et al., J. Vac. Sci. Techno. B 18, 2970 (2000)] for soft x-ray microscopy [G. Denbeaux, Rev. Sci. Instrum. (these proceedings); W. Chao, Proc. SPIE 4146, 171 (2000)] are now made to high accuracy with outer zone widths of 25 nm, and demonstrated resolution of 23 nm with proper illumination and stability. These permit important advances in the study of protein specific transport and structure in the life sciences [C. Larabell (private communication); W. Meyer-Ilse et al., J. Microsc. 201, 395 (2001)] and the study of magnetic materials [P. Fischer et al., J. Synchrotron. Radiat. 8, 325 (2001)] with elemental sensitivity at the resolution of individual domains. Major corporations (members of the EUV Limited Liability Company are Intel, Motorola, AMD, Micron, Infineon, and IBM) are now preparing the path for the fabrication of future computer chips, in the years 2007 and beyond, using multilayer coated reflective optics, which achieve reflectivities of 70% in the 11-14 nm region [T. Barbee et al., Appl. Opt. 24, 883 (1985); C. Montcalm et al., Proc. SPIE 3676, 710 (1999)]. These coated optics are to be incorporated in extreme ultraviolet (EUV) print cameras, known as "steppers." Electronic patterns with features in the range of 50-70 nm have been printed. The first alpha tool stepper recently demonstrated all critical technologies [D. Tichenor et al., Proc. SPIE 4343, 19 (2001)] needed for EUV lithography. Preproduction beta tools are targeted for delivery by leading suppliers [ASML, the Netherlands, at the SPIE Microlithography Conference, Santa Clara, CA, March 2001] in 2004, with high volume production tools available in late 2006 for manufacturing in 2007. New results in these two areas will be discussed in the context of the synergy of science and technology.

Full-chip level MEEF analysis using model based lithography verification

NASA Astrophysics Data System (ADS)

Kim, Juhwan; Wang, Lantian; Zhang, Daniel; Tang, Zongwu

2005-11-01

MEEF (Mask Error Enhancement Factor) has become a critical factor in CD uniformity control since optical lithography process moved to sub-resolution era. A lot of studies have been done by quantifying the impact of the mask CD (Critical Dimension) errors on the wafer CD errors1-2. However, the benefits from those studies were restricted only to small pattern areas of the full-chip data due to long simulation time. As fast turn around time can be achieved for the complicated verifications on very large data by linearly scalable distributed processing technology, model-based lithography verification becomes feasible for various types of applications such as post mask synthesis data sign off for mask tape out in production and lithography process development with full-chip data3,4,5. In this study, we introduced two useful methodologies for the full-chip level verification of mask error impact on wafer lithography patterning process. One methodology is to check MEEF distribution in addition to CD distribution through process window, which can be used for RET/OPC optimization at R&D stage. The other is to check mask error sensitivity on potential pinch and bridge hotspots through lithography process variation, where the outputs can be passed on to Mask CD metrology to add CD measurements on those hotspot locations. Two different OPC data were compared using the two methodologies in this study.

Structural characterization of sol-gel derived oxide nanostuctures using synchrotron x-ray techniques

NASA Astrophysics Data System (ADS)

Sun, Tao

Ceramic oxides possess extraordinarily rich functionalities. With the advent of nanofabrication techniques, it is now possible to grow nanostructured oxides with precise control of composition, morphology, and microstructure, which has re-vitalized the research in the field of traditional ceramics. The unexpected behavior and enhanced properties of oxide nanostructures have been extensively reported. However, knowledge about the underlying mechanisms as well as structural implications is still quite limited. Therefore, it is imperative to develop and employ sophisticated characterization tools for unraveling the structure-property relationships for oxide nanostructures. The present thesis work aims at addressing the critical issues associated with fabrication, and more importantly, structural characterization of functional oxide nanostructures. The dissertation starts with introducing the strategy for synthesizing phase-pure and highly controlled oxide nanostructures using sol-gel deposition and an innovative approach called "soft" electron beam lithography. Some specific oxides are chosen for the present study, such as BiFeO3, CoFe2O4, and SnO2, because of their scientific and technological significance. Subsequent to fabrication of tailored oxide nanostructures, advanced synchrotron x-ray scattering techniques have been applied for structural characterization. The nucleation and growth behavior of BiFeO3 thin film was investigated using in situ grazing-incidence small-angle x-ray scattering (GISAXS) technique. The results reveal that the kinetics for early-stage nuclei growth are governed by the oriented-attachment model. Moreover, the porous structures of undoped and Pd-doped semiconducting SnOx thin films were quantitatively characterized using GISAXS. By correlating the structural parameters with H2 sensitivity of SnOx films, it is found out that the microstructure of doped film is favorable for gas sensing, but it is not the major reason for the overall property enhancement arising from the dopant. Furthermore, a novel method based on scanning x-ray microdiffraction technique is proposed and applied for probing the strain distribution around individual CoFe2O4 nanoline epitaxially grown on MgO substrate. It is demonstrated that x-ray diffuse scattering intensity can be used to gauge the edge-induced subtle strain variation. The dissertation underscores the need for quantitative understanding of structural underpinning in the mechanisms and behavior of oxide nanostructures, and highlights the role of advanced synchrotron x-ray scattering approaches.

A low cost method for hard x-ray grating interferometry.

PubMed

Du, Yang; Lei, Yaohu; Liu, Xin; Huang, Jianheng; Zhao, Zhigang; Guo, Jinchuan; Li, Ji; Niu, Hanben

2016-12-07

Grating interferometry is advantageous over conventional x-ray absorption imaging because it enables the detection of samples constituted by low atomic number elements (low-Z materials). Therefore, it has a potential application in biological science and medical diagnostics. The grating interferometry has some critical optics components such as absorption gratings which are conventionally manufactured by the lithography, electroplating, and molding (LIGA) technique and employing gold as the absorbent material in it. However, great challenge lies in its implementations for practical applications because of the cost and difficulty to achieve high aspect ratio absorbing grating devices. In this paper, we present a low-cost approach that involves using the micro-casting technique with bismuth (Bi) as the absorber in source grating and as well as filling cesium iodide thallium(CsI:Tl) in a periodically structured scintillator. No costly facilities as synchrotron radiation are required and cheap material is used in our approach. Our experiment using these components shows high quality complementary images can be obtained with contrast of absorption, phase and visibility. This alternative method conquers the limitation of costly grating devices for a long time and stands an important step towards the further practical application of grating interferometry.

Knowing the dense plasma focus - The coming of age (of the PF) with broad-ranging scaling laws

NASA Astrophysics Data System (ADS)

Saw, S. H.; Lee, S.

2017-03-01

The dense plasma focus is blessed not only with copious multi-radiations ranging from electron and ion beams, x-rays both soft and hard, fusion neutrons D-D and D-T but also with the property of enhanced compression from radiative collapse leading to HED (high energy density) states. The Lee code has been used in extensive systematic numerical experiments tied to reality through fitting with measured current waveforms and verified through comparison of measured and computed yields and measurements of multi-radiation. The studies have led to establishment of scaling laws with respect to storage energy, discharge current and pinch currents for fusion neutrons, characteristic soft x-rays, all-line radiation and ion beams. These are summarized here together with a first-time presentation of a scaling law of radiatively enhanced compression as a function of atomic number of operational gas. This paper emphasizes that such a broad range of scaling laws signals the coming of age of the DPF and presents a reference platform for planning the many potential applications such as in advanced SXR lithography, materials synthesizing and testing, medical isotopes, imaging and energy and high energy density (HED).

Establishing nonlinearity thresholds with ultraintense X-ray pulses

DOE PAGES

Szlachetko, Jakub; Hoszowska, Joanna; Dousse, Jean-Claude; ...

2016-09-13

X-ray techniques have evolved over decades to become highly refined tools for a broad range of investigations. Importantly, these approaches rely on X-ray measurements that depend linearly on the number of incident X-ray photons. The advent of X-ray free electron lasers (XFELs) is opening the ability to reach extremely high photon numbers within ultrashort X-ray pulse durations and is leading to a paradigm shift in our ability to explore nonlinear X-ray signals. However, the enormous increase in X-ray peak power is a double-edged sword with new and exciting methods being developed but at the same time well-established techniques proving unreliable.more » Consequently, accurate knowledge about the threshold for nonlinear X-ray signals is essential. Here in this paper we report an X-ray spectroscopic study that reveals important details on the thresholds for nonlinear X-ray interactions. By varying both the incident X-ray intensity and photon energy, we establish the regimes at which the simplest nonlinear process, two-photon X-ray absorption (TPA), can be observed. From these measurements we can extract the probability of this process as a function of photon energy and confirm both the nature and sub-femtosecond lifetime of the virtual intermediate electronic state.« less

Demonstration of lithography patterns using reflective e-beam direct write

NASA Astrophysics Data System (ADS)

Freed, Regina; Sun, Jeff; Brodie, Alan; Petric, Paul; McCord, Mark; Ronse, Kurt; Haspeslagh, Luc; Vereecke, Bart

2011-04-01

Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

United States Air Force High School Apprenticeship Program. 1990 Program Management Report. Volume 3

DTIC Science & Technology

1991-04-18

User Guide Shelly Knupp 73 Computer-Aided Design (CAD) Area Christopher O’Dell 74 Electron Beam Lithography Suzette Yu 68 Flight Dynamics Laboratory 75...fabrication. I Mr. Ed Davis, for the background knowledge of device processes and I information on electron beam lithography . Captain Mike Cheney, for...researcher may write gates on to the wafer by a process called lithography . This is the most crucial and complex part of the process. Two types of proven

Rigorous ILT optimization for advanced patterning and design-process co-optimization

NASA Astrophysics Data System (ADS)

Selinidis, Kosta; Kuechler, Bernd; Cai, Howard; Braam, Kyle; Hoppe, Wolfgang; Domnenko, Vitaly; Poonawala, Amyn; Xiao, Guangming

2018-03-01

Despite the large difficulties involved in extending 193i multiple patterning and the slow ramp of EUV lithography to full manufacturing readiness, the pace of development for new technology node variations has been accelerating. Multiple new variations of new and existing technology nodes have been introduced for a range of device applications; each variation with at least a few new process integration methods, layout constructs and/or design rules. This had led to a strong increase in the demand for predictive technology tools which can be used to quickly guide important patterning and design co-optimization decisions. In this paper, we introduce a novel hybrid predictive patterning method combining two patterning technologies which have each individually been widely used for process tuning, mask correction and process-design cooptimization. These technologies are rigorous lithography simulation and inverse lithography technology (ILT). Rigorous lithography simulation has been extensively used for process development/tuning, lithography tool user setup, photoresist hot-spot detection, photoresist-etch interaction analysis, lithography-TCAD interactions/sensitivities, source optimization and basic lithography design rule exploration. ILT has been extensively used in a range of lithographic areas including logic hot-spot fixing, memory layout correction, dense memory cell optimization, assist feature (AF) optimization, source optimization, complex patterning design rules and design-technology co-optimization (DTCO). The combined optimization capability of these two technologies will therefore have a wide range of useful applications. We investigate the benefits of the new functionality for a few of these advanced applications including correction for photoresist top loss and resist scumming hotspots.

Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces.

PubMed

Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A

2017-05-11

Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO x (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

Highly Loaded Mesoporous Silica/Nanoparticle Composites and Patterned Mesoporous Silica Films

NASA Astrophysics Data System (ADS)

Kothari, Rohit; Hendricks, Nicholas R.; Wang, Xinyu; Watkins, James J.

2014-03-01

Novel approaches for the preparation of highly filled mesoporous silica/nanoparticle (MS/NP) composites and for the fabrication of patterned MS films are described. The incorporation of iron platinum NPs within the walls of MS is achieved at high NP loadings by doping amphiphilic poly(ethylene oxide-b-propylene oxide-b-ethylene oxide) (Pluronic®) copolymer templates via selective hydrogen bonding between the pre-synthesized NPs and the hydrophilic portion of the block copolymer. The MS is then synthesized by means of phase selective condensation of tetraethylorthosilicate (TEOS) within the NP loaded block copolymer templates dilated with supercritical carbon dioxide (scCO2) followed by calcination. For patterned films, microphase separated block copolymer/small molecule additive blends are patterned using UV-assisted nanoimprint lithography. Infusion and condensation of a TEOS within template films using ScCO2 as a processing medium followed by calcination yields the patterned MS films. Scanning electron microscopy is used characterize pattern fidelity and transmission electron microscopy analysis confirms the presence of the mesopores. Long range order in nanocomposites is confirmed by low angle x-ray diffraction.

Single-Step Seeded-Growth of Graphene Nanoribbons (GNRs) via Plasma-Enhanced Chemical Vapor Deposition (PECVD)

NASA Astrophysics Data System (ADS)

Hsu, C.-C.; Yang, K.; Tseng, W.-S.; Li, Yiliang; Li, Yilun; Tour, J. M.; Yeh, N.-C.

One of the main challenges in the fabrication of GNRs is achieving large-scale low-cost production with high quality. Current techniques, including lithography and unzipped carbon nanotubes, are not suitable for mass production. We have recently developed a single-step PECVD growth process of high-quality graphene sheets without any active heating. By adding some substituted aromatic as seeding molecules, we are able to rapidly grow GNRs vertically on various transition-metal substrates. The morphology and electrical properties of the GNRs are dependent on the growth parameters such as the growth time, gas flow and species of the seeding molecules. On the other hand, all GNRs exhibit strong infrared and optical absorption. From studies of the Raman spectra, scanning electron microscopic images, and x-ray/ultraviolet photoelectron spectra of these GNRs as functions of the growth parameters, we propose a model for the growth mechanism. Our findings suggest that our approach opens up a pathway to large-scale, inexpensive production of GNRs for applications to supercapacitors and solar cells. This work was supported by the Grubstake Award and NSF through IQIM at Caltech.

Block copolymer lithography of rhodium nanoparticles for high temperature electrocatalysis.

PubMed

Boyd, David A; Hao, Yong; Li, Changyi; Goodwin, David G; Haile, Sossina M

2013-06-25

We present a method for forming ordered rhodium nanostructures on a solid support. The approach makes use of a block copolymer to create and assemble rhodium chloride nanoparticles from solution onto a surface; subsequent plasma and thermal processing are employed to remove the polymer and fully convert the nanostructures to metallic rhodium. Films cast from a solution of the triblock copolymer poly(styrene-b-2-vinyl pyridine-b-ethylene oxide) dissolved in toluene with rhodium(III) chloride hydrate were capable of producing a monolayer of rhodium nanoparticles of uniform size and interparticle spacing. The nanostructures were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The electrocatalytic performance of the nanoparticles was investigated with AC impedance spectroscopy. We observed that the addition of the particles to a model solid oxide fuel cell anode provided up to a 14-fold improvement in the anode activity as evidenced by a decrease in the AC impedance resistance. Examination of the anode after electrochemical measurement revealed that the basic morphology and distribution of the particles were preserved.

Direct detection of x-rays for protein crystallography employing a thick, large area CCD

DOEpatents

Atac, Muzaffer; McKay, Timothy

1999-01-01

An apparatus and method for directly determining the crystalline structure of a protein crystal. The crystal is irradiated by a finely collimated x-ray beam. The interaction of the x-ray beam with the crystal produces scattered x-rays. These scattered x-rays are detected by means of a large area, thick CCD which is capable of measuring a significant number of scattered x-rays which impact its surface. The CCD is capable of detecting the position of impact of the scattered x-ray on the surface of the CCD and the quantity of scattered x-rays which impact the same cell or pixel. This data is then processed in real-time and the processed data is outputted to produce a image of the structure of the crystal. If this crystal is a protein the molecular structure of the protein can be determined from the data received.

Optofluidic encapsulation and manipulation of silicon microchips using image processing based optofluidic maskless lithography and railed microfluidics.

PubMed

Chung, Su Eun; Lee, Seung Ah; Kim, Jiyun; Kwon, Sunghoon

2009-10-07

We demonstrate optofluidic encapsulation of silicon microchips using image processing based optofluidic maskless lithography and manipulation using railed microfluidics. Optofluidic maskless lithography is a dynamic photopolymerization technique of free-floating microstructures within a fluidic channel using spatial light modulator. Using optofluidic maskless lithography via computer-vision aided image processing, polymer encapsulants are fabricated for chip protection and guiding-fins for efficient chip conveying within a fluidic channel. Encapsulated silicon chips with guiding-fins are assembled using railed microfluidics, which is an efficient guiding and heterogeneous self-assembly system of microcomponents. With our technology, externally fabricated silicon microchips are encapsulated, fluidically guided and self-assembled potentially enabling low cost fluidic manipulation and assembly of integrated circuits.

Planar rotational magnetic micromotors with integrated shaft encoder and magnetic rotor levitation

NASA Technical Reports Server (NTRS)

Guckel, Henry; Christenson, T. R.; Skrobis, K. J.; Klein, J.; Karnowsky, M.

1994-01-01

Deep x-ray lithography and electroplating may be combined to form a fabrication tool for micromechanical devices with large structural heights, to 500 micron, and extreme edge acuities, less than 0.1 micron-run-out per 100 micron of height. This process concept which originated in Germany as LIGA may be further extended by adding surface micromachining. This extension permits the fabrication of precision metal and plastic parts which may be assembled into three-dimensional micromechanical components and systems. The processing tool may be used to fabricate devices from ferromagnetic material such as nickel and nickel-iron alloys. These materials when properly heat treated exhibit acceptable magnetic behavior for current to flux conversion and marginal behavior for permanent magnet applications. The tool and materials have been tested via planar, magnetic, rotational micromotor fabrication. Three phase reluctance machines of the 6:4 configuration with 280 micron diameter rotors have been tested and analyzed. Stable rotational speeds to 34,000 rpm with output torques above 10 x 10(exp -9) N-m have been obtained. The behavior is monitored with integrated shaft encoders which are photodiodes which measure the rotor response. Magnetic levitation of the rotor via reluctance forces has been achieved and has reduced frictional torque losses to less than 1 percent of the available torque. The results indicate that high speed limits of these actuators are related to torque ripple. Hysteresis motors with magnetic bearings are under consideration and will produce high speed rotational machines with excellent sensor application potential.

Three dimensional profile measurement using multi-channel detector MVM-SEM

NASA Astrophysics Data System (ADS)

Yoshikawa, Makoto; Harada, Sumito; Ito, Keisuke; Murakawa, Tsutomu; Shida, Soichi; Matsumoto, Jun; Nakamura, Takayuki

2014-07-01

In next generation lithography (NGL) for the 1x nm node and beyond, the three dimensional (3D) shape measurements such as side wall angle (SWA) and height of feature on photomask become more critical for the process control. Until today, AFM (Atomic Force Microscope), X-SEM (cross-section Scanning Electron Microscope) and TEM (Transmission Electron Microscope) tools are normally used for 3D measurements, however, these techniques require time-consuming preparation and observation. And both X-SEM and TEM are destructive measurement techniques. This paper presents a technology for quick and non-destructive 3D shape analysis using multi-channel detector MVM-SEM (Multi Vision Metrology SEM), and also reports its accuracy and precision.

Nanocrystalline diamond micro-anvil grown on single crystal diamond as a generator of ultra-high pressures

DOE PAGES

Samudrala, Gopi K.; Moore, Samuel L.; Velisavljevic, Nenad; ...

2016-09-29

By combining mask-less lithography and chemical vapor deposition (CVD) techniques, a novel two-stage diamond anvil has been fabricated. A nanocrystalline diamond (NCD) micro-anvil 30 μm in diameter was grown at the center of a [100]-oriented, diamond anvil by utilizing microwave plasma CVD method. The NCD micro-anvil has a diamond grain size of 115 nm and micro-focused Raman and X-ray Photoelectron spectroscopy analysis indicate sp3-bonded diamond content of 72%. Lastly, these CVD grown NCD micro-anvils were tested in an opposed anvil configuration and the transition metals osmium and tungsten were compressed to high pressures of 264 GPa in a diamond anvilmore » cell.« less

Electric property measurement of free-standing SrTiO3 nanoparticles assembled by dielectrophoresis

NASA Astrophysics Data System (ADS)

Budiman, Faisal; Kotooka, Takumi; Horibe, Yoichi; Eguchi, Masanori; Tanaka, Hirofumi

2018-06-01

Free-standing strontium titanate (SrTiO3/STO) nanoparticles (NPs) were synthesized by the sol–gel method. X-ray diffractometry revealed that the required minimum annealing temperature to synthesize pure and highly crystalline STO NPs was 500 °C. Moreover, morphological observation by field emission scanning electron microscopy showed that the STO NPs have a spherical structure and their size depended on annealing condition. Electrical properties were measured using a low-temperature probing system. Here, an electrode was fabricated by electron beam lithography and the synthesized STO NPs were aligned at the electrodes by dielectrophoresis. The conductance of a sample was proportional to temperature. Two conduction mechanisms originating from hopping and tunneling appeared in the Arrhenius plot.

Optimize of shrink process with X-Y CD bias on hole pattern

NASA Astrophysics Data System (ADS)

Koike, Kyohei; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Oyama, Kenichi; Yaegashi, Hidetami

2017-03-01

Gridded design rules[1] is major process in configuring logic circuit used 193-immersion lithography. In the scaling of grid patterning, we can make 10nm order line and space pattern by using multiple patterning techniques such as self-aligned multiple patterning (SAMP) and litho-etch- litho-etch (LELE)[2][3][4] . On the other hand, Line cut process has some error parameters such as pattern defect, placement error, roughness and X-Y CD bias with the decreasing scale. We tried to cure hole pattern roughness to use additional process such as Line smoothing[5] . Each smoothing process showed different effect. As the result, CDx shrink amount is smaller than CDy without one additional process. In this paper, we will report the pattern controllability comparison of EUV and 193-immersion. And we will discuss optimum method about CD bias on hole pattern.

Integration of multiple theories for the simulation of laser interference lithography processes

NASA Astrophysics Data System (ADS)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-01

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Integration of multiple theories for the simulation of laser interference lithography processes.

PubMed

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-24

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Lithographic process window optimization for mask aligner proximity lithography

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Vogler, Uwe; Bramati, Arianna; Erdmann, Andreas; Ünal, Nezih; Hofmann, Ulrich; Hennemeyer, Marc; Zoberbier, Ralph; Nguyen, David; Brugger, Juergen

2014-03-01

We introduce a complete methodology for process window optimization in proximity mask aligner lithography. The commercially available lithography simulation software LAB from GenISys GmbH was used for simulation of light propagation and 3D resist development. The methodology was tested for the practical example of lines and spaces, 5 micron half-pitch, printed in a 1 micron thick layer of AZ® 1512HS1 positive photoresist on a silicon wafer. A SUSS MicroTec MA8 mask aligner, equipped with MO Exposure Optics® was used in simulation and experiment. MO Exposure Optics® is the latest generation of illumination systems for mask aligners. MO Exposure Optics® provides telecentric illumination and excellent light uniformity over the full mask field. MO Exposure Optics® allows the lithography engineer to freely shape the angular spectrum of the illumination light (customized illumination), which is a mandatory requirement for process window optimization. Three different illumination settings have been tested for 0 to 100 micron proximity gap. The results obtained prove, that the introduced process window methodology is a major step forward to obtain more robust processes in mask aligner lithography. The most remarkable outcome of the presented study is that a smaller exposure gap does not automatically lead to better print results in proximity lithography - what the "good instinct" of a lithographer would expect. With more than 5'000 mask aligners installed in research and industry worldwide, the proposed process window methodology might have significant impact on yield improvement and cost saving in industry.

Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography.

PubMed

Li, Y; Kinoshita, H; Watanabe, T; Irie, S; Shirayone, S; Okazaki, S

2000-07-01

A scanning critical illumination system is designed to couple a synchrotron radiation source to a three-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H x V = 8 mm x 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H x V = 150 mm x 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (sigma) of this illumination system is approximately 0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at sigma = 0.6 to confirm that the illumination optics can meet the requirements for three-aspherical-mirror imaging optics with a feature size of 0.06 microm.

Simulation of the effect of incline incident angle in DMD Maskless Lithography

NASA Astrophysics Data System (ADS)

Liang, L. W.; Zhou, J. Y.; Xiang, L. L.; Wang, B.; Wen, K. H.; Lei, L.

2017-06-01

The aim of this study is to provide a simulation method for investigation of the intensity fluctuation caused by the inclined incident angle in DMD (digital micromirror device) maskless lithography. The simulation consists of eight main processes involving the simplification of the DMD aperture function and light propagation utilizing the non-parallel angular spectrum method. These processes provide a possibility of co-simulation in the spatial frequency domain, which combines the microlens array and DMD in the maskless lithography system. The simulation provided the spot shape and illumination distribution. These two parameters are crucial in determining the exposure dose in the existing maskless lithography system.

Range pattern matching with layer operations and continuous refinements

NASA Astrophysics Data System (ADS)

Tseng, I.-Lun; Lee, Zhao Chuan; Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Ong, Jonathan Yoong Seang

2018-03-01

At advanced and mainstream process nodes (e.g., 7nm, 14nm, 22nm, and 55nm process nodes), lithography hotspots can exist in layouts of integrated circuits even if the layouts pass design rule checking (DRC). Existence of lithography hotspots in a layout can cause manufacturability issues, which can result in yield losses of manufactured integrated circuits. In order to detect lithography hotspots existing in physical layouts, pattern matching (PM) algorithms and commercial PM tools have been developed. However, there are still needs to use DRC tools to perform PM operations. In this paper, we propose a PM synthesis methodology, which uses a continuous refinement technique, for the automatic synthesis of a given lithography hotspot pattern into a DRC deck, which consists of layer operation commands, so that an equivalent PM operation can be performed by executing the synthesized deck with the use of a DRC tool. Note that the proposed methodology can deal with not only exact patterns, but also range patterns. Also, lithography hotspot patterns containing multiple layers can be processed. Experimental results show that the proposed methodology can accurately and efficiently detect lithography hotspots in physical layouts.

Vectorial mask optimization methods for robust optical lithography

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong; Arce, Gonzalo R.

2012-10-01

Continuous shrinkage of critical dimension in an integrated circuit impels the development of resolution enhancement techniques for low k1 lithography. Recently, several pixelated optical proximity correction (OPC) and phase-shifting mask (PSM) approaches were developed under scalar imaging models to account for the process variations. However, the lithography systems with larger-NA (NA>0.6) are predominant for current technology nodes, rendering the scalar models inadequate to describe the vector nature of the electromagnetic field that propagates through the optical lithography system. In addition, OPC and PSM algorithms based on scalar models can compensate for wavefront aberrations, but are incapable of mitigating polarization aberrations in practical lithography systems, which can only be dealt with under the vector model. To this end, we focus on developing robust pixelated gradient-based OPC and PSM optimization algorithms aimed at canceling defocus, dose variation, wavefront and polarization aberrations under a vector model. First, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. A steepest descent algorithm is then used to iteratively optimize the mask patterns. Simulations show that the proposed algorithms can effectively improve the process windows of the optical lithography systems.

Study on photochemical analysis system (VLES) for EUV lithography

NASA Astrophysics Data System (ADS)

Sekiguchi, A.; Kono, Y.; Kadoi, M.; Minami, Y.; Kozawa, T.; Tagawa, S.; Gustafson, D.; Blackborow, P.

2007-03-01

A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

Geometrical correction of the e-beam proximity effect for raster scan systems

NASA Astrophysics Data System (ADS)

Belic, Nikola; Eisenmann, Hans; Hartmann, Hans; Waas, Thomas

1999-06-01

Increasing demands on pattern fidelity and CD accuracy in e- beam lithography require a correction of the e-beam proximity effect. The new needs are mainly coming from OPC at mask level and x-ray lithography. The e-beam proximity limits the achievable resolution and affects neighboring structures causing under- or over-exposion depending on the local pattern densities and process settings. Methods to compensate for this unequilibrated does distribution usually use a dose modulation or multiple passes. In general raster scan systems are not able to apply variable doses in order to compensate for the proximity effect. For system of this kind a geometrical modulation of the original pattern offers a solution for compensation of line edge deviations due to the proximity effect. In this paper a new method for the fast correction of the e-beam proximity effect via geometrical pattern optimization is described. The method consists of two steps. In a first step the pattern dependent dose distribution caused by back scattering is calculated by convolution of the pattern with the long range part of the proximity function. The restriction to the long range part result in a quadratic sped gain in computing time for the transformation. The influence of the short range part coming from forward scattering is not pattern dependent and can therefore be determined separately in a second step. The second calculation yields the dose curve at the border of a written structure. The finite gradient of this curve leads to an edge displacement depending on the amount of underground dosage at the observed position which was previously determined in the pattern dependent step. This unintended edge displacement is corrected by splitting the line into segments and shifting them by multiples of the writers address grid to the opposite direction.

Stimulated Electronic X-Ray Raman Scattering

NASA Astrophysics Data System (ADS)

Weninger, Clemens; Purvis, Michael; Ryan, Duncan; London, Richard A.; Bozek, John D.; Bostedt, Christoph; Graf, Alexander; Brown, Gregory; Rocca, Jorge J.; Rohringer, Nina

2013-12-01

We demonstrate strong stimulated inelastic x-ray scattering by resonantly exciting a dense gas target of neon with femtosecond, high-intensity x-ray pulses from an x-ray free-electron laser (XFEL). A small number of lower energy XFEL seed photons drive an avalanche of stimulated resonant inelastic x-ray scattering processes that amplify the Raman scattering signal by several orders of magnitude until it reaches saturation. Despite the large overall spectral width, the internal spiky structure of the XFEL spectrum determines the energy resolution of the scattering process in a statistical sense. This is demonstrated by observing a stochastic line shift of the inelastically scattered x-ray radiation. In conjunction with statistical methods, XFELs can be used for stimulated resonant inelastic x-ray scattering, with spectral resolution smaller than the natural width of the core-excited, intermediate state.

The ROSAT Deep Survey. 2; Optical Identification, Photometry and Spectra of X-Ray Sources in the Lockman Field

NASA Technical Reports Server (NTRS)

Schmidt, M.; Hasinger, G.; Gunn, J.; Schneider, D.; Burg, R.; Giacconi, R.; Lehmann, I.; MacKenty, J.; Truemper, J.; Zamorani, G.

1998-01-01

The ROSAT Deep Survey includes a complete sample of 50 X-ray sources with fluxes in the 0.5 - 2 keV band larger than 5.5 x 10(exp -15)erg/sq cm/s in the Lockman field (Hasinger et al., Paper 1). We have obtained deep broad-band CCD images of the field and spectra of many optical objects near the positions of the X-ray sources. We define systematically the process leading to the optical identifications of the X-ray sources. For this purpose, we introduce five identification (ID) classes that characterize the process in each case. Among the 50 X-ray sources, we identify 39 AGNs, 3 groups of galaxies, 1 galaxy and 3 galactic stars. Four X-ray sources remain unidentified so far; two of these objects may have an unusually large ratio of X-ray to optical flux.

Progress in mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Selinidis, Kosta S.; Brooks, Cynthia B.; Doyle, Gary F.; Brown, Laura; Jones, Chris; Imhof, Joseph; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools and processes specifically for semiconductor applications. The requirements needed for semiconductors dictate the need for a well defined form factor for both master and replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6" x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm, 3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance results of this marks are comparable to the baseline fused silica align marks.

Studies of BL Lacertae objects with the Einstein Observatory - The soft X-ray spectra of OJ 287 and PKS 0735+178

NASA Technical Reports Server (NTRS)

Madejski, Greg M.; Schwartz, Daniel A.

1988-01-01

Accurate, soft X-ray spectra of two BL Lac objects, OJ 287 and PKS 0735+178, are presented. The X-ray spectra are well described by a power-law model with a low-energy cutoff consistent with photoelectric absorption within the Galaxy. The best-fit values of the energy spectral index in the 0.2-4.0 keV band are 0.91 and 0.76 respectively. The X-ray flux from OJ 287 is variable by a ratio of three from low to high state; PKS 0735+178 shows no indication of X-ray variability. The X-ray emission in OJ 287 is interpreted to be due to the synchrotron process from a volume common with either a beamed radio component or a stationary optical component. In PKS 0735+178, where the X-ray emission is most likely due to the Compton process operating in one of the VLBI radio components. The synchrotron self-Compton process with modest kinematic Doppler factors predicts the measured X-ray flux from PKS 0735+178 and lower than the measured flux in OJ 287.

Assessment of Restoration Methods of X-Ray Images with Emphasis on Medical Photogrammetric Usage

NASA Astrophysics Data System (ADS)

Hosseinian, S.; Arefi, H.

2016-06-01

Nowadays, various medical X-ray imaging methods such as digital radiography, computed tomography and fluoroscopy are used as important tools in diagnostic and operative processes especially in the computer and robotic assisted surgeries. The procedures of extracting information from these images require appropriate deblurring and denoising processes on the pre- and intra-operative images in order to obtain more accurate information. This issue becomes more considerable when the X-ray images are planned to be employed in the photogrammetric processes for 3D reconstruction from multi-view X-ray images since, accurate data should be extracted from images for 3D modelling and the quality of X-ray images affects directly on the results of the algorithms. For restoration of X-ray images, it is essential to consider the nature and characteristics of these kinds of images. X-ray images exhibit severe quantum noise due to limited X-ray photons involved. The assumptions of Gaussian modelling are not appropriate for photon-limited images such as X-ray images, because of the nature of signal-dependant quantum noise. These images are generally modelled by Poisson distribution which is the most common model for low-intensity imaging. In this paper, existing methods are evaluated. For this purpose, after demonstrating the properties of medical X-ray images, the more efficient and recommended methods for restoration of X-ray images would be described and assessed. After explaining these approaches, they are implemented on samples from different kinds of X-ray images. By considering the results, it is concluded that using PURE-LET, provides more effective and efficient denoising than other examined methods in this research.

Performance Characterization of an xy-Stage Applied to Micrometric Laser Direct Writing Lithography.

PubMed

Jaramillo, Juan; Zarzycki, Artur; Galeano, July; Sandoz, Patrick

2017-01-31

This article concerns the characterization of the stability and performance of a motorized stage used in laser direct writing lithography. The system was built from commercial components and commanded by G-code. Measurements use a pseudo-periodic-pattern (PPP) observed by a camera and image processing is based on Fourier transform and phase measurement methods. The results report that the built system has a stability against vibrations determined by peak-valley deviations of 65 nm and 26 nm in the x and y directions, respectively, with a standard deviation of 10 nm in both directions. When the xy-stage is in movement, it works with a resolution of 0.36 μm, which is an acceptable value for most of research and development (R and D) microtechnology developments in which the typical feature size used is in the micrometer range.

Performance Characterization of an xy-Stage Applied to Micrometric Laser Direct Writing Lithography

PubMed Central

Jaramillo, Juan; Zarzycki, Artur; Galeano, July; Sandoz, Patrick

2017-01-01

This article concerns the characterization of the stability and performance of a motorized stage used in laser direct writing lithography. The system was built from commercial components and commanded by G-code. Measurements use a pseudo-periodic-pattern (PPP) observed by a camera and image processing is based on Fourier transform and phase measurement methods. The results report that the built system has a stability against vibrations determined by peak-valley deviations of 65 nm and 26 nm in the x and y directions, respectively, with a standard deviation of 10 nm in both directions. When the xy-stage is in movement, it works with a resolution of 0.36 µm, which is an acceptable value for most of research and development (R and D) microtechnology developments in which the typical feature size used is in the micrometer range. PMID:28146126

Design and fabrication of nano-imprint templates using unique pattern transforms and primitives

NASA Astrophysics Data System (ADS)

MacDonald, Susan; Mellenthin, David; Rentzsch, Kevin; Kramer, Kenneth; Ellenson, James; Hostetler, Tim; Enck, Ron

2005-11-01

Increasing numbers of MEMS, photonic, and integrated circuit manufacturers are investigating the use of Nano-imprint Lithography or Step and Flash Imprint Lithography (SFIL) as a lithography choice for making various devices and products. Their main interests in using these technologies are the lack of aberrations inherent in traditional optical reduction lithography, and the relative low cost of imprint tools. Since imprint templates are at 1X scale, the small sizes of these structures have necessitated the use of high-resolution 50KeV, and 100KeV e-beam lithography tools to build these templates. For MEMS and photonic applications, the structures desired are often circles, arches, and other non-orthogonal shapes. It has long been known that both 50keV, and especially 100keV e-beam lithography tools are extremely accurate, and can produce very high resolution structures, but the trade off is long write times. The main drivers in write time are shot count and stage travel. This work will show how circles and other non-orthogonal shapes can be produced with a 50KeV Variable Shaped Beam (VSB) e-beam lithography system using unique pattern transforms and primitive shapes, while keeping the shot count and write times under control. The quality of shapes replicated into the resist on wafer using an SFIL tool will also be presented.

Nano-defect management in directed self-assembly of block copolymers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Azuma, Tsukasa; Seino, Yuriko; Sato, Hironobu; Kasahara, Yusuke; Kodera, Katsuyoshi; Jiravanichsakul, Phubes; Hayakawa, Teruaki; Yoshimoto, Kenji; Takenaka, Mikihito

2017-03-01

Directed self-assembly (DSA) of block copolymers (BCPs) has been expected to become one of the most promising next generation lithography candidates for sub-15 nm line patterning and sub-20 nm contact hole patterning. In order to provide the DSA lithography to practical use in advanced semiconductor device manufacturing, defect mitigation in the DSA materials and processes is the primary challenge. We need to clarify the defect generation mechanism using in-situ measurement of self-assembling processes of BCPs in cooperation with modeling approaches to attain the DSA defect mitigation. In this work, we thus employed in-situ atomic force microscope (AFM) and grazing-incidence small angle X-ray scattering (GI-SAXS) and investigated development of surface morphology as well as internal structure during annealing processes. Figure 1 shows series of the AFM images of PMAPOSS-b-PTFEMA films during annealing processes. The images clearly show that vitrified sponge-like structure without long-range order in as-spun film transforms into lamellar structure and that the long range order of the lamellar structure increases with annealing temperature. It is well-known that ordering processes of BCPs from disordered state in bulk progress via nucleation and growth. In contrary to the case of bulk, the observed processes seem to be spinodal decomposition. This is because the structure in as-spun film is not the concentration fluctuation of disordered state but the vitrified sponge-like structure. The annealing processes induce order-order transition from non-equilibrium ordered-state to the lamellar structure. The surface tension assists the transition and directs the orientation. Figure 2 shows scattering patterns of (a) vicinity of film top and (b) whole sample of the GI-SAXS. We can find vertically oriented lamellar structure in the vicinity of film top while horizontally oriented lamellar structures in the vicinity of film bottom, indicating that the GI-SAXS measurement can clarify the variation of the morphologies in depth direction and that the surface tension affects the orientation of the lamellar structure. Finally a combination of the time development data in the in-situ AFM and the GI-SAXS is used to develop a kinetic modeling for prediction of dynamical change in three-dimensional nano-structures. A part of this work was funded by the New Energy and Industrial Technology Development Organization (NEDO) in Japan under the EIDEC project.

Towards simultaneous measurements of electronic and structural properties in ultra-fast x-ray free electron laser absorption spectroscopy experiments

NASA Astrophysics Data System (ADS)

Gaudin, J.; Fourment, C.; Cho, B. I.; Engelhorn, K.; Galtier, E.; Harmand, M.; Leguay, P. M.; Lee, H. J.; Nagler, B.; Nakatsutsumi, M.; Ozkan, C.; Störmer, M.; Toleikis, S.; Tschentscher, Th; Heimann, P. A.; Dorchies, F.

2014-04-01

The rapidly growing ultrafast science with X-ray lasers unveils atomic scale processes with unprecedented time resolution bringing the so called ``molecular movie'' within reach. X-ray absorption spectroscopy is one of the most powerful x-ray techniques providing both local atomic order and electronic structure when coupled with ad-hoc theory. Collecting absorption spectra within few x-ray pulses is possible only in a dispersive setup. We demonstrate ultrafast time-resolved measurements of the LIII-edge x-ray absorption near-edge spectra of irreversibly laser excited Molybdenum using an average of only few x-ray pulses with a signal to noise ratio limited only by the saturation level of the detector. The simplicity of the experimental set-up makes this technique versatile and applicable for a wide range of pump-probe experiments, particularly in the case of non-reversible processes.

Towards simultaneous measurements of electronic and structural properties in ultra-fast x-ray free electron laser absorption spectroscopy experiments

PubMed Central

Gaudin, J.; Fourment, C.; Cho, B. I.; Engelhorn, K.; Galtier, E.; Harmand, M.; Leguay, P. M.; Lee, H. J.; Nagler, B.; Nakatsutsumi, M.; Ozkan, C.; Störmer, M.; Toleikis, S.; Tschentscher, Th; Heimann, P. A.; Dorchies, F.

2014-01-01

The rapidly growing ultrafast science with X-ray lasers unveils atomic scale processes with unprecedented time resolution bringing the so called “molecular movie” within reach. X-ray absorption spectroscopy is one of the most powerful x-ray techniques providing both local atomic order and electronic structure when coupled with ad-hoc theory. Collecting absorption spectra within few x-ray pulses is possible only in a dispersive setup. We demonstrate ultrafast time-resolved measurements of the LIII-edge x-ray absorption near-edge spectra of irreversibly laser excited Molybdenum using an average of only few x-ray pulses with a signal to noise ratio limited only by the saturation level of the detector. The simplicity of the experimental set-up makes this technique versatile and applicable for a wide range of pump-probe experiments, particularly in the case of non-reversible processes. PMID:24740172

Towards simultaneous measurements of electronic and structural properties in ultra-fast x-ray free electron laser absorption spectroscopy experiments

DOE PAGES

Gaudin, J.; Fourment, C.; Cho, B. I.; ...

2014-04-17

The rapidly growing ultrafast science with X-ray lasers unveils atomic scale processes with unprecedented time resolution bringing the so called “molecular movie” within reach. X-ray absorption spectroscopy is one of the most powerful x-ray techniques providing both local atomic order and electronic structure when coupled with ad-hoc theory. Collecting absorption spectra within few x-ray pulses is possible only in a dispersive setup. We demonstrate ultrafast time-resolved measurements of the LIII-edge x-ray absorption near-edge spectra of irreversibly laser excited Molybdenum using an average of only few x-ray pulses with a signal to noise ratio limited only by the saturation level ofmore » the detector. The simplicity of the experimental set-up makes this technique versatile and applicable for a wide range of pump-probe experiments, particularly in the case of non-reversible processes.« less

Data processing and analysis for 2D imaging GEM detector system

NASA Astrophysics Data System (ADS)

Czarski, T.; Chernyshova, M.; Pozniak, K. T.; Kasprowicz, G.; Byszuk, A.; Juszczyk, B.; Kolasinski, P.; Linczuk, M.; Wojenski, A.; Zabolotny, W.; Zienkiewicz, P.

2014-11-01

The Triple Gas Electron Multiplier (T-GEM) is presented as soft X-ray (SXR) energy and position sensitive detector for high-resolution X-ray diagnostics of magnetic confinement fusion plasmas [1]. Multi-channel measurement system and essential data processing for X-ray energy and position recognition is consider. Several modes of data acquisition are introduced depending on processing division for hardware and software components. Typical measuring issues aredeliberated for enhancement of data quality. Fundamental output characteristics are presented for one and two dimensional detector structure. Representative results for reference X-ray source and tokamak plasma are demonstrated.

Planetary X-ray studies: past, present and future

NASA Astrophysics Data System (ADS)

Branduardi-Raymont, Graziella

2016-07-01

Our solar system is a fascinating physics laboratory and X-ray observations are now firmly established as a powerful diagnostic tool of the multiple processes taking place in it. The science that X-rays reveal encompasses solar, space plasma and planetary physics, and the response of bodies in the solar system to the impact of the Sun's activity. This talk will review what we know from past observations and what we expect to learn in the short, medium and long term. Observations with Chandra and XMM-Newton have demonstrated that the origin of Jupiter's bright soft X-ray aurorae lies in the Charge eXchange (CX) process, likely to involve the interaction with atmospheric neutrals of local magnetospheric ions, as well as those carried in the solar wind. At higher energies electron bremsstrahlung is thought to be the X-ray emitting mechanism, while the whole planetary disk acts as a mirror for the solar X-ray flux via Thomson and fluorescent scattering. This 'X-ray mirror' phenomenon is all that is observed from Saturn's disk, which otherwise lacks X-ray auroral features. The Earth's X-ray aurora is bright and variable and mostly due to electron bremsstrahlung and line emission from atmospheric species. Un-magnetised planets, Venus and Mars, do not show X-ray aurorae but display the interesting combination of mirroring the solar X-ray flux and producing X-rays by Solar Wind Charge eXchange (SWCX) in their exospheres. These processes respond to different solar stimulation (photons and solar wind plasma respectively) hence their relative contributions are seen to vary according to the Sun's output. Present and future of planetary X-ray studies are very bright. We are preparing for the arrival of the Juno mission at Jupiter this summer and for coordinated observations with Chandra and XMM-Newton on the approach and later during Juno's orbital phase. These will allow direct correlation of the local plasma conditions with the X-ray emissions and the establishment of the relative contributions of different processes. SWCX X-ray emission from the Earth's exosphere is turning from unwanted variable background in astrophysical observations to a novel and global diagnostic tool for investigating solar-terrestrial interactions: this underpins the development of the ESA-CAS joint mission SMILE (Solar Wind Magnetosphere Ionosphere Link Explorer) due for launch in 2021. On the longer term ATHENA (Advanced Telescope for High ENergy Astrophysics, launch 2028) will provide planetary targets with vastly improved X-ray sensitivity on that currently afforded by XMM-Newton.

Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films.

PubMed

Flynn, Shauna P; Bogan, Justin; Lundy, Ross; Khalafalla, Khalafalla E; Shaw, Matthew; Rodriguez, Brian J; Swift, Paul; Daniels, Stephen; O'Connor, Robert; Hughes, Greg; Kelleher, Susan M

2018-08-31

Self-assembling block copolymer (BCP) patterns are one of the main contenders for the fabrication of nanopattern templates in next generation lithography technology. Transforming these templates to hard mark materials is key for pattern transfer and in some cases, involves selectively removing one block from the nanopattern. For poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP), a high χ BCP system which could be potentially incorporated into semiconductor nanofabrication, this selective removal is predominantly done by a wet etch/activation process. Conversely, this process has numerous disadvantages including lack of control and high generation of waste leading to high cost. For these reasons, our motivation was to move away from the wet etch process and optimise a dry etch which would overcome the limitations associated with the activation process. The work presented herein shows the development of a selective plasma etch process for the removal of P4VP cores from PS-b-P4VP nanopatterned film. Results have shown that a nitrogen reactive ion etch plasma has a selectivity for P4VP of 2.2:1 and suggest that the position of the nitrogen in the aromatic ring of P4VP plays a key role in this selectivity. In situ plasma etching and x-ray photoelectron spectrometry measurements were made without breaking vacuum, confirming that the nitrogen plasma has selectivity for removal of P4VP over PS.

Treatment of foods with high-energy X rays

NASA Astrophysics Data System (ADS)

Cleland, M. R.; Meissner, J.; Herer, A. S.; Beers, E. W.

2001-07-01

The treatment of foods with ionizing energy in the form of gamma rays, accelerated electrons, and X rays can produce beneficial effects, such as inhibiting the sprouting in potatoes, onions, and garlic, controlling insects in fruits, vegetables, and grains, inhibiting the growth of fungi, pasteurizing fresh meat, poultry, and seafood, and sterilizing spices and food additives. After many years of research, these processes have been approved by regulatory authorities in many countries and commercial applications have been increasing. High-energy X rays are especially useful for treating large packages of food. The most attractive features are product penetration, absorbed dose uniformity, high utilization efficiency and short processing time. The ability to energize the X-ray source only when needed enhances the safety and convenience of this technique. The availability of high-energy, high-power electron accelerators, which can be used as X-ray generators, makes it feasible to process large quantities of food economically. Several industrial accelerator facilities already have X-ray conversion equipment and several more will soon be built with product conveying systems designed to take advantage of the unique characteristics of high-energy X rays. These concepts will be reviewed briefly in this paper.

Automatic tool alignment in a backscatter X-ray scanning system

DOEpatents

Garretson, Justin; Hobart, Clinton G.; Gladwell, Thomas S.; Monda, Mark J.

2015-11-17

Technologies pertaining to backscatter x-ray scanning systems are described herein. The backscatter x-ray scanning system includes an x-ray source, which directs collimated x-rays along a plurality of output vectors towards a target. A detector detects diffusely reflected x-rays subsequent to respective collimated x-rays impacting the target, and outputs signals indicative of parameters of the detected x-rays. An image processing system generates an x-ray image based upon parameters of the detected x-rays, wherein each pixel in the image corresponds to a respective output vector. A user selects a particular portion of the image, and a medical device is positioned such that its directional axis is coincident with the output vector corresponding to at least one pixel in the portion of the image.

Automatic tool alignment in a backscatter x-ray scanning system

DOEpatents

Garretson, Justin; Hobart, Clinton G.; Gladwell, Thomas S.; Monda, Mark J.

2015-06-16

Technologies pertaining to backscatter x-ray scanning systems are described herein. The backscatter x-ray scanning system includes an x-ray source, which directs collimated x-rays along a plurality of output vectors towards a target. A detector detects diffusely reflected x-rays subsequent to respective collimated x-rays impacting the target, and outputs signals indicative of parameters of the detected x-rays. An image processing system generates an x-ray image based upon parameters of the detected x-rays, wherein each pixel in the image corresponds to a respective output vector. A user selects a particular portion of the image, and a tool is positioned such that its directional axis is coincident with the output vector corresponding to at least one pixel in the portion of the image.

Characterization of Beryllium Windows for Coherent X-ray Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goto, Shunji; Yabashi, Makina; Tamasaku, Kenji

2007-01-19

Beryllium foils fabricated by several processes were characterized using spatially coherent x rays at 1-km beamline of SPring-8. By thickness dependence of bright x-ray spot density due to Fresnel diffraction from several-micron deficiencies, we found that speckles (bright x-ray spots) were due to voids with densities 103-104 mm-3 in powder foils and ingot foils. Compared with powder and ingot foils, a polished physical-vapor-deposited (PVD) beryllium foil gave highly uniform beams with no speckles. The PVD process eliminates the internal voids in principle and the PVD foil is the best for coherent x-ray applications.

Pulse X-ray device for stereo imaging and few-projection tomography of explosive and fast processes

NASA Astrophysics Data System (ADS)

Palchikov, E. I.; Dolgikh, A. V.; Klypin, V. V.; Krasnikov, I. Y.; Ryabchun, A. M.

2017-10-01

This paper describes the operation principles and design features of the device for single pulse X-raying of explosive and high-speed processes, developed on the basis of a Tesla transformer with lumped secondary capacitor bank. The circuit with the lumped capacitor bank allows transferring a greater amount of energy to the discharge circuit as compared with the Marks-surge generator for more effective operation with remote X-ray tubes connected by coaxial cables. The device equipped with multiple X-ray tubes provides simultaneous X-raying of extended or spaced objects, stereo imaging, or few-projection tomography.

Industrial applications of automated X-ray inspection

NASA Astrophysics Data System (ADS)

Shashishekhar, N.

2015-03-01

Many industries require that 100% of manufactured parts be X-ray inspected. Factors such as high production rates, focus on inspection quality, operator fatigue and inspection cost reduction translate to an increasing need for automating the inspection process. Automated X-ray inspection involves the use of image processing algorithms and computer software for analysis and interpretation of X-ray images. This paper presents industrial applications and illustrative case studies of automated X-ray inspection in areas such as automotive castings, fuel plates, air-bag inflators and tires. It is usually necessary to employ application-specific automated inspection strategies and techniques, since each application has unique characteristics and interpretation requirements.

Automatic detection of bone fragments in poultry using multi-energy x-rays

DOEpatents

Gleason, Shaun S [Knoxville, TN; Paulus, Michael J [Knoxville, TN; Mullens, James A [Knoxville, TN

2002-04-09

At least two linear arrays of x-ray detectors are placed below a conveyor belt in a poultry processing plant. Multiple-energy x-ray sources illuminate the poultry and are detected by the detectors. Laser profilometry is used to measure the poultry thickness as the x-ray data is acquired. The detector readout is processed in real time to detect the presence of small highly attenuating fragments in the poultry, i.e., bone, metal, and cartilage.

A two-in-one process for reliable graphene transistors processed with photo-lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahlberg, P.; Hinnemo, M.; Song, M.

2015-11-16

Research on graphene field-effect transistors (GFETs) has mainly relied on devices fabricated using electron-beam lithography for pattern generation, a method that has known problems with polymer contaminants. GFETs fabricated via photo-lithography suffer even worse from other chemical contaminations, which may lead to strong unintentional doping of the graphene. In this letter, we report on a scalable fabrication process for reliable GFETs based on ordinary photo-lithography by eliminating the aforementioned issues. The key to making this GFET processing compatible with silicon technology lies in a two-in-one process where a gate dielectric is deposited by means of atomic layer deposition. During thismore » deposition step, contaminants, likely unintentionally introduced during the graphene transfer and patterning, are effectively removed. The resulting GFETs exhibit current-voltage characteristics representative to that of intrinsic non-doped graphene. Fundamental aspects pertaining to the surface engineering employed in this work are investigated in the light of chemical analysis in combination with electrical characterization.« less

OML: optical maskless lithography for economic design prototyping and small-volume production

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Bleeker, Arno; Hintersteiner, Jason; Troost, Kars; Freyer, Jorge; van der Mast, Karel

2004-05-01

The business case for Maskless Lithography is more compelling than ever before, due to more critical processes, rising mask costs and shorter product cycles. The economics of Maskless Lithography gives a crossover volume from Maskless to mask-based lithography at surprisingly many wafers per mask for surprisingly few wafers per hour throughput. Also, small-volume production will in many cases be more economical with Maskless Lithography, even when compared to "shuttle" schemes, reticles with multiple layers, etc. The full benefit of Maskless Lithography is only achievable by duplicating processes that are compatible with volume production processes on conventional scanners. This can be accomplished by the integration of pattern generators based on spatial light modulator technology with state-of-the-art optical scanner systems. This paper reports on the system design of an Optical Maskless Scanner in development by ASML and Micronic: small-field optics with high demagnification, variable NA and illumination schemes, spatial light modulators with millions of MEMS mirrors on CMOS drivers, a data path with a sustained data flow of more than 250 GPixels per second, stitching of sub-fields to scanner fields, and rasterization and writing strategies for throughput and good image fidelity. Predicted lithographic performance based on image simulations is also shown.

Development of nanoimprint lithography templates for the contact hole layer application (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ichimura, Koji; Hikichi, Ryugo; Harada, Saburo; Kanno, Koichi; Kurihara, Masaaki; Hayashi, Naoya

2017-04-01

Nanoimprint lithography, NIL, is gathering much attention as one of the most potential candidates for the next generation lithography for semiconductor. This technology needs no pattern data modification for exposure, simpler exposure system, and single step patterning process without any coat/develop truck, and has potential of cost effective patterning rather than very complex optical lithography and/or EUV lithography. NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the most important issues. Since NIL is 1:1 pattern transfer process, master templates have 4 times higher resolution compared with photomasks. Another key is to maintain the quality of the master templates in replication process. NIL process is applied for the template replication and this imprint process determines most of the performance of the replicated templates. Expectations to the NIL are not only high resolution line and spaces but also the contact hole layer application. Conventional ArF-i lithography has a certain limit in size and pitch for contact hole fabrication. On the other hand, NIL has good pattern fidelity for contact hole fabrication at smaller sizes and pitches compared with conventional optical lithography. Regarding the tone of the templates for contact hole, there are the possibilities of both tone, the hole template and the pillar template, depending on the processes of the wafer side. We have succeeded to fabricate both types of templates at 2xnm in size. In this presentation, we will be discussing fabrication or our replica template for the contact hole layer application. Both tone of the template fabrication will be presented as well as the performance of the replica templates. We will also discuss the resolution improvement of the hole master templates by using various e-beam exposure technologies.

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors.

PubMed

McCulloch, Iain; Bailey, Clare; Genevicius, Kristijonas; Heeney, Martin; Shkunov, Maxim; Sparrowe, David; Tierney, Steven; Zhang, Weimin; Baldwin, Rodney; Kreouzis, Theo; Andreasen, Jens W; Breiby, Dag W; Nielsen, Martin M

2006-10-15

Organic electronics technology, in which at least the semiconducting component of the integrated circuit is an organic material, offers the potential for fabrication of electronic products by low-cost printing technologies, such as ink jet, gravure offset lithography and flexography. The products will typically be of lower performance than those using the present state of the art single crystal or polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, active matrix liquid crystal (LC) displays, flexible organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. The organization and alignment of the mesogens, both before and after crosslinking, were probed by grazing incidence wide-angle X-ray scattering of thin films. Both time-of-flight and field effect transistor devices were prepared and their electrical characterization reported.

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

Direct X-ray photoconversion in flexible organic thin film devices operated below 1 V

PubMed Central

Basiricò, Laura; Ciavatti, Andrea; Cramer, Tobias; Cosseddu, Piero; Bonfiglio, Annalisa; Fraboni, Beatrice

2016-01-01

The application of organic electronic materials for the detection of ionizing radiations is very appealing thanks to their mechanical flexibility, low-cost and simple processing in comparison to their inorganic counterpart. In this work we investigate the direct X-ray photoconversion process in organic thin film photoconductors. The devices are realized by drop casting solution-processed bis-(triisopropylsilylethynyl)pentacene (TIPS-pentacene) onto flexible plastic substrates patterned with metal electrodes; they exhibit a strong sensitivity to X-rays despite the low X-ray photon absorption typical of low-Z organic materials. We propose a model, based on the accumulation of photogenerated charges and photoconductive gain, able to describe the magnitude as well as the dynamics of the X-ray-induced photocurrent. This finding allows us to fabricate and test a flexible 2 × 2 pixelated X-ray detector operating at 0.2 V, with gain and sensitivity up to 4.7 × 104 and 77,000 nC mGy−1 cm−3, respectively. PMID:27708274

X-ray emission processes in stars and their immediate environment

PubMed Central

Testa, Paola

2010-01-01

A decade of X-ray stellar observations with Chandra and XMM-Newton has led to significant advances in our understanding of the physical processes at work in hot (magnetized) plasmas in stars and their immediate environment, providing new perspectives and challenges, and in turn the need for improved models. The wealth of high-quality stellar spectra has allowed us to investigate, in detail, the characteristics of the X-ray emission across the Hertzsprung-Russell (HR) diagram. Progress has been made in addressing issues ranging from classical stellar activity in stars with solar-like dynamos (such as flares, activity cycles, spatial and thermal structuring of the X-ray emitting plasma, and evolution of X-ray activity with age), to X-ray generating processes (e.g., accretion, jets, magnetically confined winds) that were poorly understood in the preChandra/XMM-Newton era. I will discuss the progress made in the study of high energy stellar physics and its impact in a wider astrophysical context, focusing on the role of spectral diagnostics now accessible. PMID:20360562

Study of nanoimprint lithography (NIL) for HVM of memory devices

NASA Astrophysics Data System (ADS)

Kono, Takuya; Hatano, Masayuki; Tokue, Hiroshi; Kobayashi, Kei; Suzuki, Masato; Fukuhara, Kazuya; Asano, Masafumi; Nakasugi, Tetsuro; Choi, Eun Hyuk; Jung, Wooyung

2017-03-01

A low cost alternative lithographic technology is desired to meet the decreasing feature size of semiconductor devices. Nano-imprint lithography (NIL) is one of the candidates for alternative lithographic technologies.[1][2][3] NIL has such advantages as good resolution, critical dimension (CD) uniformity and low line edge roughness (LER). On the other hand, the critical issues of NIL are defectivity, overlay, and throughput. In order to introduce NIL into the HVM, it is necessary to overcome these three challenges simultaneously.[4]-[12] In our previous study, we have reported a dramatic improvement in NIL process defectivity on a pilot line tool, FPA-1100 NZ2. We have described that the NIL process for 2x nm half pitch is getting closer to the target of HVM.[12] In this study, we report the recent evaluation of the NIL process performance to judge the applicability of NIL to memory device fabrications. In detail, the CD uniformity and LER are found to be less than 2nm. The overlay accuracy of the test device is less than 7nm. A defectivity level of below 1pcs./cm2 has been achieved at a throughput of 15 wafers per hour.

M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

DOEpatents

Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

1998-06-02

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

Combined neutron and x-ray imaging at the National Ignition Facility (invited)

DOE PAGES

Danly, C. R.; Christensen, K.; Fatherley, Valerie E.; ...

2016-10-11

X-ray and neutrons are commonly used to image Inertial Confinement Fusion implosions, providing key diagnostic information on the fuel assembly of burning DT fuel. The x-ray and neutron data provided are complementary as the production of neutrons and x-rays occur from different physical processes, but typically these two images are collected from different views with no opportunity for co-registration of the two images. Neutrons are produced where the DT fusion fuel is burning; X-rays are produced in regions corresponding to high temperatures. Processes such as mix of ablator material into the hotspot can result in increased x-ray production and decreasedmore » neutron production but can only be confidently observed if the two images are collected along the same line of sight and co-registered. To allow direct comparison of x-ray and neutron data, a Combined Neutron X-ray Imaging system has been tested at Omega and installed at the National Ignition Facility to collect an x-ray image along the currently installed neutron imaging line-of-sight. Here, this system is described, and initial results are presented along with prospects for definitive coregistration of the images.« less

Combined neutron and x-ray imaging at the National Ignition Facility (invited).

PubMed

Danly, C R; Christensen, K; Fatherley, V E; Fittinghoff, D N; Grim, G P; Hibbard, R; Izumi, N; Jedlovec, D; Merrill, F E; Schmidt, D W; Simpson, R A; Skulina, K; Volegov, P L; Wilde, C H

2016-11-01

X-ray and neutrons are commonly used to image inertial confinement fusion implosions, providing key diagnostic information on the fuel assembly of burning deuterium-tritium (DT) fuel. The x-ray and neutron data provided are complementary as the production of neutrons and x-rays occurs from different physical processes, but typically these two images are collected from different views with no opportunity for co-registration of the two images. Neutrons are produced where the DT fusion fuel is burning; X-rays are produced in regions corresponding to high temperatures. Processes such as mix of ablator material into the hotspot can result in increased x-ray production and decreased neutron production but can only be confidently observed if the two images are collected along the same line of sight and co-registered. To allow direct comparison of x-ray and neutron data, a combined neutron x-ray imaging system has been tested at Omega and installed at the National Ignition Facility to collect an x-ray image along the currently installed neutron imaging line of sight. This system is described, and initial results are presented along with prospects for definitive coregistration of the images.

Micro-fabrication method of graphite mesa microdevices based on optical lithography technology

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Wen, Donghui; Zhu, Huamin; Zhang, Xiaorui; Yang, Xing; Shi, Yunsheng; Zheng, Tianxiang

2017-12-01

Graphite mesa microdevices have incommensurate contact nanometer interfaces, superlubricity, high-speed self-retraction, and other characteristics, which have potential applications in high-performance oscillators and micro-scale switches, memory devices, and gyroscopes. However, the current method of fabricating graphite mesa microdevices is mainly based on high-cost, low efficiency electron beam lithography technology. In this paper, the processing technologies of graphite mesa microdevices with various shapes and sizes were investigated by a low-cost micro-fabrication method, which was mainly based on optical lithography technology. The characterization results showed that the optical lithography technology could realize a large-area of patterning on the graphite surface, and the graphite mesa microdevices, which have a regular shape, neat arrangement, and high verticality could be fabricated in large batches through optical lithography technology. The experiments and analyses showed that the graphite mesa microdevices fabricated through optical lithography technology basically have the same self-retracting characteristics as those fabricated through electron beam lithography technology, and the maximum size of the graphite mesa microdevices with self-retracting phenomenon can reach 10 µm  ×  10 µm. Therefore, the proposed method of this paper can realize the high-efficiency and low-cost processing of graphite mesa microdevices, which is significant for batch fabrication and application of graphite mesa microdevices.

X-Ray Toolkit

DOE Office of Scientific and Technical Information (OSTI.GOV)

2015-10-20

Radiographic Image Acquisition & Processing Software for Security Markets. Used in operation of commercial x-ray scanners and manipulation of x-ray images for emergency responders including State, Local, Federal, and US Military bomb technicians and analysts.

An investigation on defect-generation conditions in immersion lithography

NASA Astrophysics Data System (ADS)

Tomita, Tadatoshi; Shimoaoki, Takeshi; Enomoto, Masashi; Kyoda, Hideharu; Kitano, Junichi; Suganaga, Toshifumi

2006-03-01

As a powerful candidate for a lithography technique that can accommodate the scaling-down of semiconductors, 193-nm immersion lithography-which realizes a high numerical aperture (NA) and uses deionized water as the medium between the lens and wafer in the exposure system-has been developing at a rapid pace and has reached the stage of practical application. In regards to defects that are a cause for concern in the case of 193-nm immersion lithography, however, many components are still unclear and many problems remain to be solved. It has been pointed out, for example, that in the case of 193-nm immersion lithography, immersion of the resist film in deionized water during exposure causes infiltration of moisture into the resist film, internal components of the resist dissolve into the deionized water, and residual water generated during exposure affects post-processing. Moreover, to prevent this influence of directly immersing the resist in de-ionized water, application of a protective film is regarded as effective. However, even if such a film is applied, it is still highly likely that the above-mentioned defects will still occur. Accordingly, to reduce these defects, it is essential to identify the typical defects occurring in 193-nm immersion lithography and to understand the condition for generation of defects by using some kinds of protective films and resist materials. Furthermore, from now onwards, with further scaling down of semiconductors, it is important to maintain a clear understanding of the relation between defect-generation conditions and critical dimensions (CD). Aiming to extract typical defects occurring in 193-nm immersion lithography, the authors carried out a comparative study with dry exposure lithography, thereby confirming several typical defects associated with immersion lithography. We then investigated the conditions for generation of defects in the case of some kinds of protective films. In addition to that, by investigating the defect-generation conditions and comparing the classification data between wet and dry exposure, we were able to determine the origin of each particular defect involved in immersion lithography. Furthermore, the comparison of CD for wet and dry processing could indicate the future defectivity levels to be expected with shrinking immersion process critical dimensions.

Rf system for the NSLS coherent infrared radiation source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Broome, W.; Biscardi, R.; Keane, J.

1995-05-01

The existing NSLS X-ray Lithography Source (XLS Phase I) is being considered for a coherent synchrotron radiation source. The existing 211 MHz warm cavity will be replaced with a 5-cell 2856 MHz superconducting RF cavity, driven by a series of 2 kW klystrons. The RF system will provide a total V{sub RF} of 1.5 MV to produce {sigma}{sub L} = 0.3 mm electron bunches at an energy of 150 MeV. Superconducting technology significantly reduces the required space and power needed to achieve the higher voltage. It is the purpose of this paper to describe the superconducting RF system and cavity,more » power requirements, and cavity design parameters such as input coupling, Quality Factor, and Higher Order Modes.« less

Thiolated polyethylene oxide as a non-fouling element for nano-patterned bio-devices

NASA Astrophysics Data System (ADS)

Lisboa, Patrícia; Valsesia, Andrea; Colpo, Pascal; Gilliland, Douglas; Ceccone, Giacomo; Papadopoulou-Bouraoui, Andri; Rauscher, Hubert; Reniero, Fabiano; Guillou, Claude; Rossi, François

2007-03-01

This work describes the synthesis of a thiolated polyethylene oxide that self-assembles on gold to create a non-fouling surface. Thiolated polyethylene oxide was synthesised by reacting 16-mercaptohexadecanoic acid with polyethylene glycol mono methyl ether. The coverage of the thiolated polyethylene oxide on gold was studied by cyclic voltammetry, and the modified surfaces were characterised by X-ray photoelectron spectroscopy and ellipsometry. Protein resistance was assessed using quartz crystal microbalance. Results showed a non-fouling character produced by the thiolated polyethylene oxide. The synthesised product was used as the passivation layer on nano-patterned surfaces consisting of arrayed nano-spots, fabricated by plasma based colloidal lithography. The specific adsorption of anti-bovine serum albumin in the mercaptohexadecanoic acid spots was verified by atomic force microscopy.

In-line digital holography with phase-shifting Greek-ladder sieves

NASA Astrophysics Data System (ADS)

Xie, Jing; Zhang, Junyong; Zhang, Yanli; Zhou, Shenlei; Zhu, Jianqiang

2018-04-01

Phase shifting is the key technique in in-line digital holography, but traditional phase shifters have their own limitations in short wavelength regions. Here, phase-shifting Greek-ladder sieves with amplitude-only modulation are introduced into in-line digital holography, which are essentially a kind of diffraction lens with three-dimensional array diffraction-limited foci. In the in-line digital holographic experiment, we design two kinds of sieves by lithography and verify the validity of their phase-shifting function by measuring a 1951 U.S. Air Force resolution test target and three-dimensional array foci. With advantages of high resolving power, low cost, and no limitations at shorter wavelengths, phase-shifting Greek-ladder sieves have great potential in X-ray holography or biochemical microscopy for the next generation of synchrotron light sources.

High-power free-electron lasers-technology and future applications

NASA Astrophysics Data System (ADS)

Socol, Yehoshua

2013-03-01

Free-electron laser (FEL) is an all-electric, high-power, high beam-quality source of coherent radiation, tunable - unlike other laser sources - at any wavelength within wide spectral region from hard X-rays to far-IR and beyond. After the initial push in the framework of the “Star Wars” program, the FEL technology benefited from decades of R&D and scientific applications. Currently, there are clear signs that the FEL technology reached maturity, enabling real-world applications. E.g., successful and unexpectedly smooth commissioning of the world-first X-ray FEL in 2010 increased in one blow by more than an order of magnitude (40×) wavelength region available by FEL technology and thus demonstrated that the theoretical predictions just keep true in real machines. Experience of ordering turn-key electron beamlines from commercial companies is a further demonstration of the FEL technology maturity. Moreover, successful commissioning of the world-first multi-turn energy-recovery linac demonstrated feasibility of reducing FEL size, cost and power consumption by probably an order of magnitude in respect to previous configurations, opening way to applications, previously considered as non-feasible. This review takes engineer-oriented approach to discuss the FEL technology issues, keeping in mind applications in the fields of military and aerospace, next generation semiconductor lithography, photo-chemistry and isotope separation.

X-ray tomographic image magnification process, system and apparatus therefor

DOEpatents

Kinney, J.H.; Bonse, U.K.; Johnson, Q.C.; Nichols, M.C.; Saroyan, R.A.; Massey, W.N.; Nusshardt, R.

1993-09-14

A computerized three-dimensional x-ray tomographic microscopy system is disclosed, comprising: (a) source means for providing a source of parallel x-ray beams, (b) staging means for staging and sequentially rotating a sample to be positioned in the path of the (c) x-ray image magnifier means positioned in the path of the beams downstream from the sample, (d) detecting means for detecting the beams after being passed through and magnified by the image magnifier means, and (e) computing means for analyzing values received from the detecting means, and converting the values into three-dimensional representations. Also disclosed is a process for magnifying an x-ray image, and apparatus therefor. 25 figures.

X-ray tomographic image magnification process, system and apparatus therefor

DOEpatents

Kinney, John H.; Bonse, Ulrich K.; Johnson, Quintin C.; Nichols, Monte C.; Saroyan, Ralph A.; Massey, Warren N.; Nusshardt, Rudolph

1993-01-01

A computerized three-dimensional x-ray tomographic microscopy system is disclosed, comprising: a) source means for providing a source of parallel x-ray beams, b) staging means for staging and sequentially rotating a sample to be positioned in the path of the c) x-ray image magnifier means positioned in the path of the beams downstream from the sample, d) detecting means for detecting the beams after being passed through and magnified by the image magnifier means, and e) computing means for analyzing values received from the detecting means, and converting the values into three-dimensional representations. Also disclosed is a process for magnifying an x-ray image, and apparatus therefor.

Geant4 simulations of a wide-angle x-ray focusing telescope

NASA Astrophysics Data System (ADS)

Zhao, Donghua; Zhang, Chen; Yuan, Weimin; Zhang, Shuangnan; Willingale, Richard; Ling, Zhixing

2017-06-01

The rapid development of X-ray astronomy has been made possible by widely deploying X-ray focusing telescopes on board many X-ray satellites. Geant4 is a very powerful toolkit for Monte Carlo simulations and has remarkable abilities to model complex geometrical configurations. However, the library of physical processes available in Geant4 lacks a description of the reflection of X-ray photons at a grazing incident angle which is the core physical process in the simulation of X-ray focusing telescopes. The scattering of low-energy charged particles from the mirror surfaces is another noteworthy process which is not yet incorporated into Geant4. Here we describe a Monte Carlo model of a simplified wide-angle X-ray focusing telescope adopting lobster-eye optics and a silicon detector using the Geant4 toolkit. With this model, we simulate the X-ray tracing, proton scattering and background detection. We find that: (1) the effective area obtained using Geant4 is in agreement with that obtained using Q software with an average difference of less than 3%; (2) X-rays are the dominant background source below 10 keV; (3) the sensitivity of the telescope is better by at least one order of magnitude than that of a coded mask telescope with the same physical dimensions; (4) the number of protons passing through the optics and reaching the detector by Firsov scattering is about 2.5 times that of multiple scattering for the lobster-eye telescope.

Microsystems Research in Japan

DTIC Science & Technology

2003-09-01

microsystems applications, like microfluidic systems, will require more than planar lithography -based fabrication processes. The committee was impressed by the...United States focused on exploiting silicon planar lithography as the core technology for microstructure fabrication, whereas Japan explored a wide...including LIGA and its extensions, micro-stereolithography, and e-beam lithography . The range of materials seen in Japan was broader than in the

The magic of 4X mask reduction

NASA Astrophysics Data System (ADS)

Lercel, Michael

2006-06-01

Although changing the mask reduction factor from 4X to a larger value offers several technical advantages, previous attempts to enact this change have not identified enough clear technical advantages to overcome the impact to productivity. Improvements in mask manufacturing, mask polarization effects, and optics cost have not been thought to be sufficient reason to accept a reduced throughput and field size. This paper summarizes the latest workshop and discussion revisiting the mask reduction factor for 32nm half-pitch lithography with hyper-numerical aperture (NA) optical or extreme ultraviolet lithography (EUVL). The workshop consensus was strongly in favor of maintaining the current magnification ratio and field size as long as mask costs can be contained.

Direct-writing lithography using laser diode beam focused with single elliptical microlens

NASA Astrophysics Data System (ADS)

Hasan, Md. Nazmul; Haque, Muttahid-Ull; Trisno, Jonathan; Lee, Yung-Chun

2015-10-01

A lithography method is proposed for arbitrary patterning using an elliptically diverging laser diode beam focused with a single planoconvex elliptical microlens. Simulations are performed to model the propagation properties of the laser beam and to design the elliptical microlens, which has two different profiles in the x- and y-axis directions. The microlens is fabricated using an excimer laser dragging method and is then attached to the laser diode using double-sided optically cleared adhesive (OCA) tape. Notably, the use of OCA tape removes the need for a complicated alignment procedure and thus significantly reduces the assembly cost. The minimum focused spot of the laser diode beam is investigated by performing single-shot exposure tests on a photoresist (PR) layer. Finally, the practical feasibility of this lithography technique to generate an arbitrary pattern is demonstrated by dotted and continuous features through thin chromium layer deposition on PR and a metal lift-off process. The results show that the minimum feature size for the dotted patterns is around 6.23 μm, while the minimum linewidths for continuous patterns is 6.44 μm. In other words, the proposed focusing technique has significant potential for writing any arbitrary high-resolution pattern for applications like printed circuit board fabrication.

Overlap junctions for high coherence superconducting qubits

NASA Astrophysics Data System (ADS)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

ArF halftone PSM cleaning process optimization for next-generation lithography

NASA Astrophysics Data System (ADS)

Son, Yong-Seok; Jeong, Seong-Ho; Kim, Jeong-Bae; Kim, Hong-Seok

2000-07-01

ArF lithography which is expected for the next generation optical lithography is adapted for 0.13 micrometers design-rule and beyond. ArF half-tone phase shift mask (HT PSM) will be applied as 1st generation of ArF lithography. Also ArF PSM cleaning demands by means of tighter controls related to phase angle, transmittance and contamination on the masks. Phase angle on ArF HT PSM should be controlled within at least +/- 3 degree and transmittance controlled within at least +/- 3 percent after cleaning process and pelliclization. In the cleaning process of HT PSM, requires not only the remove the particle on mask, but also control to half-tone material for metamorphosis. Contamination defects on the Qz of half tone type PSM is not easy to remove on the photomask surface. New technology and methods of cleaning will be developed in near future, but we try to get out for limit contamination on the mask, without variation of phase angle and transmittance after cleaning process.

A study of an alignment-less lithography method as an educational resource

NASA Astrophysics Data System (ADS)

Kai, Kazuho; Shiota, Koki; Nagaoka, Shiro; Mahmood, Mohamad Rusop Bin Haji; Kawai, Akira

2016-07-01

A simplification of the lithography process was studied. The simplification method of photolithography, named "alignment-less lithography" was proposed by omitting the photomask alignment process in photolithography process using mechanically aligned photomasks and substrate by using a simple jig on which countersinks were formed. Photomasks made of glass and the photomasks made of transparent plastic sheets were prepared for the process. As the result, approximately 5µm in the case of the glass mask, and 20µm in the case of the OHP mask were obtained with repetitive accuracies, respectively. It was confirmed that the alignment-less lithography method was successful. The possibility of the application to an educational program, such as a heuristic for solving problems was suggested using the method with the OHP mask. The nMOS FET fabrication process was successfully demonstrated using this method. The feasibility of this process was confirmed. It is expected that a totally simplified device fabrication process can be achievable when combined with other simplifications, such ass the simplified impurity diffusion processes using PSG and BSG thin film as diffusion source prepared by the Sol-Gel material under normal air environment.

UNDERSTANDING X-RAY STARS:. The Discovery of Binary X-ray Sources

NASA Astrophysics Data System (ADS)

Schreier, E. J.; Tananbaum, H.

2000-09-01

The discovery of binary X-ray sources with UHURU introduced many new concepts to astronomy. It provided the canonical model which explained X-ray emission from a large class of galactic X-ray sources: it confirmed the existence of collapsed objects as the source of intense X-ray emission; showed that such collapsed objects existed in binary systems, with mass accretion as the energy source for the X-ray emission; and provided compelling evidence for the existence of black holes. This model also provided the basis for explaining the power source of AGNs and QSOs. The process of discovery and interpretation also established X-ray astronomy as an essential sub-discipline of astronomy, beginning its incorporation into the mainstream of astronomy.

Progress in coherent lithography using table-top extreme ultraviolet lasers

NASA Astrophysics Data System (ADS)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography.

Planetary X ray experiment: Supporting research for outer planets mission: Experiment definition phase

NASA Technical Reports Server (NTRS)

Hurley, K.; Anderson, K. A.

1972-01-01

Models of Jupiter's magnetosphere were examined to predict the X-ray flux that would be emitted in auroral or radiation zone processes. Various types of X-ray detection were investigated for energy resolution, efficiency, reliability, and background. From the model fluxes it was determined under what models Jovian X-rays could be detected.

Current status of x-ray mask manufacturing at the Microlithographic Mask Development Center

NASA Astrophysics Data System (ADS)

Kimmel, Kurt R.; Hughes, Patrick J.

1996-07-01

The Microlithographic Mask Development Center (MMD) has been the focal point of X-ray mask development efforts in the United States since its inception in 1993. Funded by the Advanced Research Projects Agency (ARPA), and with technical support from the Proximity X-ray Lithography Association (AT&T, IBM, Loral Federal Systems, and Motorola) the MMD has recently made dramatic advances in mask fabrication. Numerous defect-free 64Mb and 256Mb DRAM masks have been made on both boron-doped silicon and silicon carbide substrates. Image-placement error of less than 35nm 3 sigma is achieved with high yield. Image-size (critical dimension) control of 25nm 3 sigma on 250nm nominal images is representative performance. This progress is being made in a manufacturing environment with significant volumes, multiple customers, multiple substrate configurations, and fast turnaround-time (TAT) requirements. The MMD state-of-the-art equipment infrastructure has made much of this progress possible. This year the MMD qualified the EL-4, an IBM-designed-and-built variable-shaped-spot e-beam system. The fundamental performance parameters of this system will be described. Operational techniques of multiple partial exposure writing and product specific emulation (PSE) have been implemented to improve image-placement accuracy with remarkable success. Image-size control was studied in detail with contributory components separated. Defect density was systematically reduced to yield defect-free masks while simultaneously tightening inspection criteria. Information about these and other recent engineering highlights will be reported. An outline of the primary engineering challenges and goals for 1996 and status of progress toward 100 nm design rule capability will also be given.

Spectral tailoring of nanoscale EUV and soft x-ray multilayer optics

NASA Astrophysics Data System (ADS)

Huang, Qiushi; Medvedev, Viacheslav; van de Kruijs, Robbert; Yakshin, Andrey; Louis, Eric; Bijkerk, Fred

2017-03-01

Extreme ultraviolet and soft X-ray (XUV) multilayer optics have experienced significant development over the past few years, particularly on controlling the spectral characteristics of light for advanced applications like EUV photolithography, space observation, and accelerator- or lab-based XUV experiments. Both planar and three dimensional multilayer structures have been developed to tailor the spectral response in a wide wavelength range. For the planar multilayer optics, different layered schemes are explored. Stacks of periodic multilayers and capping layers are demonstrated to achieve multi-channel reflection or suppression of the reflective properties. Aperiodic multilayer structures enable broadband reflection both in angles and wavelengths, with the possibility of polarization control. The broad wavelength band multilayer is also used to shape attosecond pulses for the study of ultrafast phenomena. Narrowband multilayer monochromators are delivered to bridge the resolution gap between crystals and regular multilayers. High spectral purity multilayers with innovated anti-reflection structures are shown to select spectrally clean XUV radiation from broadband X-ray sources, especially the plasma sources for EUV lithography. Significant progress is also made in the three dimensional multilayer optics, i.e., combining micro- and nanostructures with multilayers, in order to provide new freedom to tune the spectral response. Several kinds of multilayer gratings, including multilayer coated gratings, sliced multilayer gratings, and lamellar multilayer gratings are being pursued for high resolution and high efficiency XUV spectrometers/monochromators, with their advantages and disadvantages, respectively. Multilayer diffraction optics are also developed for spectral purity enhancement. New structures like gratings, zone plates, and pyramids that obtain full suppression of the unwanted radiation and high XUV reflectance are reviewed. Based on the present achievement of the spectral tailoring multilayer optics, the remaining challenges and opportunities for future researches are discussed.

Compact submicrosecond, high current generator for wire explosion experiments

NASA Astrophysics Data System (ADS)

Aranchuk, L. E.; Chuvatin, A. S.; Larour, J.

2004-01-01

The PIAF generator was designed for low total energy and high energy density experiments with liners, X-pinch or fiber Z-pinch loads. These studies are of interest for such applications as surface and material science, microscopy of biological specimens, lithography of x-ray sensitive resists, and x-ray backlighting of pulsed-power plasmas. The generator is based on an RLC circuit that includes six NWL 180 nF-50 kV capacitors that store up to 1.3 kJ. The capacitors are connected in parallel to a single multispark switch designed to operate at atmospheric pressure. The switch allows reaching a time delay between the trigger pulse and the current pulse of less than 80 ns and has jitter of 6 ns. The total inductance without a load compartment was optimized to be as low as 16 nH, which leads to extremely low impedance of ˜0.12 Ω. A 40 kV initial voltage provides 250 kA maximum current in a 6 nH inductive load with a 180 ns current rise time. PIAF has dimensions of 660×660×490 mm and weight of less than 100 kg, thus manifesting itself as robust, simple to operate, and cost effective. A description of the PIAF generator and the initial experimental results on PIAF with an X-pinch type load are reported. The generator was demonstrated to operate successfully with an X-pinch type load. The experiments first started with investigation of the previously unexplored X-pinch conduction time range, 100 ns-1 μs. A single short radiation pulse was obtained that came from a small, point-like plasma. The following x-ray source characteristics were achieved: typical hot spot size of 50-100 μm, radiation pulse duration of 1.5-2 ns, and radiation yield of about 250-500 mJ in the softer spectral range (hν⩾700 eV) and 50-100 mJ in the harder one (hν⩾1 keV). These results provide the potential for further application of this source, such as use as a backlight diagnostic tool.

Chemical imaging analysis of the brain with X-ray methods

NASA Astrophysics Data System (ADS)

Collingwood, Joanna F.; Adams, Freddy

2017-04-01

Cells employ various metal and metalloid ions to augment the structure and the function of proteins and to assist with vital biological processes. In the brain they mediate biochemical processes, and disrupted metabolism of metals may be a contributing factor in neurodegenerative disorders. In this tutorial review we will discuss the particular role of X-ray methods for elemental imaging analysis of accumulated metal species and metal-containing compounds in biological materials, in the context of post-mortem brain tissue. X-rays have the advantage that they have a short wavelength and can penetrate through a thick biological sample. Many of the X-ray microscopy techniques that provide the greatest sensitivity and specificity for trace metal concentrations in biological materials are emerging at synchrotron X-ray facilities. Here, the extremely high flux available across a wide range of soft and hard X-rays, combined with state-of-the-art focusing techniques and ultra-sensitive detectors, makes it viable to undertake direct imaging of a number of elements in brain tissue. The different methods for synchrotron imaging of metals in brain tissues at regional, cellular, and sub-cellular spatial resolution are discussed. Methods covered include X-ray fluorescence for elemental imaging, X-ray absorption spectrometry for speciation imaging, X-ray diffraction for structural imaging, phase contrast for enhanced contrast imaging and scanning transmission X-ray microscopy for spectromicroscopy. Two- and three-dimensional (confocal and tomographic) imaging methods are considered as well as the correlation of X-ray microscopy with other imaging tools.

Do solar decimetric spikes originate in coronal X-ray sources?

NASA Astrophysics Data System (ADS)

Battaglia, M.; Benz, A. O.

2009-06-01

Context: In the standard solar flare scenario, a large number of particles are accelerated in the corona. Nonthermal electrons emit both X-rays and radio waves. Thus, correlated signatures of the acceleration process are predicted at both wavelengths, coinciding either close to the footpoints of a magnetic loop or near the coronal X-ray source. Aims: We attempt to study the spatial connection between coronal X-ray emission and decimetric radio spikes to determine the site and geometry of the acceleration process. Methods: The positions of radio-spike sources and coronal X-ray sources are determined and analyzed in a well-observed limb event. Radio spikes are identified in observations from the Phoenix-2 spectrometer. Data from the Nançay radioheliograph are used to determine the position of the radio spikes. RHESSI images in soft and hard X-ray wavelengths are used to determine the X-ray flare geometry. Those observations are complemented by images from GOES/SXI. Results: We find that the radio emission originates at altitudes much higher than the coronal X-ray source, having an offset from the coronal X-ray source amounting to 90´´ and to 113´´ and 131´´ from the two footpoints, averaged over time and frequency. Conclusions: Decimetric spikes do not originate from coronal X-ray flare sources contrary to previous expectations. However, the observations suggest a causal link between the coronal X-ray source, related to the major energy release site, and simultaneous activity in the higher corona.

Charge Transfer Reactions

NASA Astrophysics Data System (ADS)

Dennerl, Konrad

2010-12-01

Charge transfer, or charge exchange, describes a process in which an ion takes one or more electrons from another atom. Investigations of this fundamental process have accompanied atomic physics from its very beginning, and have been extended to astrophysical scenarios already many decades ago. Yet one important aspect of this process, i.e. its high efficiency in generating X-rays, was only revealed in 1996, when comets were discovered as a new class of X-ray sources. This finding has opened up an entirely new field of X-ray studies, with great impact due to the richness of the underlying atomic physics, as the X-rays are not generated by hot electrons, but by ions picking up electrons from cold gas. While comets still represent the best astrophysical laboratory for investigating the physics of charge transfer, various studies have already spotted a variety of other astrophysical locations, within and beyond our solar system, where X-rays may be generated by this process. They range from planetary atmospheres, the heliosphere, the interstellar medium and stars to galaxies and clusters of galaxies, where charge transfer may even be observationally linked to dark matter. This review attempts to put the various aspects of the study of charge transfer reactions into a broader historical context, with special emphasis on X-ray astrophysics, where the discovery of cometary X-ray emission may have stimulated a novel look at our universe.

X-Ray Radiographic Observation of Directional Solidification Under Microgravity: XRMON-GF Experiments on MASER12 Sounding Rocket Mission

NASA Technical Reports Server (NTRS)

Reinhart, G.; NguyenThi, H.; Bogno, A.; Billia, B.; Houltz, Y.; Loth, K.; Voss, D.; Verga, A.; dePascale, F.; Mathiesen, R. H.;

Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist.

PubMed

Carbaugh, Daniel J; Pandya, Sneha G; Wright, Jason T; Kaya, Savas; Rahman, Faiz

2017-11-10

We describe techniques for performing photolithography and electron beam lithography in succession on the same resist-covered substrate. Larger openings are defined in the resist film through photolithography whereas smaller openings are defined through conventional electron beam lithography. The two processes are carried out one after the other and without an intermediate wet development step. At the conclusion of the two exposures, the resist film is developed once to reveal both large and small openings. Interestingly, these techniques are applicable to both positive and negative tone lithographies with both optical and electron beam exposure. Polymethyl methacrylate, by itself or mixed with a photocatalytic cross-linking agent, is used for this purpose. We demonstrate that such resists are sensitive to both ultraviolet and electron beam irradiation. All four possible combinations, consisting of optical and electron beam lithographies, carried out in positive and negative tone modes have been described. Demonstration grating structures have been shown and process conditions have been described for all four cases.

Automated Hybridization of X-ray Absorber Elements-A Path to Large Format Microcalorimeter Arrays

NASA Technical Reports Server (NTRS)

Moseley, S.; Kelley, R.; Allen, C.; Kilbourne, C.; Costen, N.; Miller, T.

2007-01-01

In the design of microcalorimeters, it is often desirable to produce the X-ray absorber separately from the detector element. In this case, the attachment of the absorber to the detector element with the required thermal and mechanical characteristics is a major challenge. In such arrays, the attachment has been done by hand. This process is not easily extended to the large format arrays required for future X- ray astronomy missions such as the New x-ray Telescope or NeXT. In this paper we present an automated process for attaching absorber tiles to the surface of a large-scale X-ray detector array. The absorbers are attached with stycast epoxy to a thermally isolating polymer structure made of SU-8. SU-8 is a negative epoxy based photo resist produced by Microchem. We describe the fabrication of the X-ray absorbers and their suspension on a handle die in an adhesive matrix. We describe the production process for the polymer isolators on the detector elements. We have developed a new process for the alignment, and simultaneous bonding of the absorber tiles to an entire detector array. This process uses equipment and techniques used in the flip-chip bonding industry and approaches developed in the fabrication of the XRS-2 instrument. XRS-2 was an X-ray spectrometer that was launched on the Suzaku telescope in July 10, 2005. We describe the process and show examples of sample arrays produced by this process. Arrays with up to 300 elements have been bonded. The present tests have used dummy absorbers made of Si. In future work, we will demonstrate bonding of HgTe absorbers.

Design and analysis of x-ray vision systems for high-speed detection of foreign body contamination in food

NASA Astrophysics Data System (ADS)

Graves, Mark; Smith, Alexander; Batchelor, Bruce G.; Palmer, Stephen C.

1994-10-01

In the food industry there is an ever increasing need to control and monitor food quality. In recent years fully automated x-ray inspection systems have been used to detect food on-line for foreign body contamination. These systems involve a complex integration of x- ray imaging components with state of the art high speed image processing. The quality of the x-ray image obtained by such systems is very poor compared with images obtained from other inspection processes, this makes reliable detection of very small, low contrast defects extremely difficult. It is therefore extremely important to optimize the x-ray imaging components to give the very best image possible. In this paper we present a method of analyzing the x-ray imaging system in order to consider the contrast obtained when viewing small defects.

An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III-V epitaxial materials

NASA Astrophysics Data System (ADS)

Whitehouse, C. R.; Barnett, S. J.; Soley, D. E. J.; Quarrell, J.; Aldridge, S. J.; Cullis, A. G.; Emeny, M. T.; Johnson, A. D.; Clarke, G. F.; Lamb, W.; Tanner, B. K.; Cottrell, S.; Lunn, B.; Hogg, C.; Hagston, W.

1992-01-01

This paper describes a unique combined UHV MBE growth x-ray topography facility designed to allow the first real-time synchrotron radiation x-ray topography study of strained-layer III-V growth processes. This system will enable unambiguous determination of dislocation nucleation and multiplication processes as a function of controlled variations in growth conditions, and also during post-growth thermal processing. The planned experiments have placed very stringent demands upon the engineering design of the system, and design details regarding the growth chamber; sample manipulator, x-ray optics, and real-time imaging systems are described. Results obtained during a feasibility study are also presented.

An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III--V epitaxial materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whitehouse, C.R.; Barnett, S.J.; Soley, D.E.J.

1992-01-01

This paper describes a unique combined UHV MBE growth x-ray topography facility designed to allow the first real-time synchrotron radiation x-ray topography study of strained-layer III--V growth processes. This system will enable unambiguous determination of dislocation nucleation and multiplication processes as a function of controlled variations in growth conditions, and also during post-growth thermal processing. The planned experiments have placed very stringent demands upon the engineering design of the system, and design details regarding the growth chamber; sample manipulator, x-ray optics, and real-time imaging systems are described. Results obtained during a feasibility study are also presented.

An investigation on some of the tumor treatment cases using x-rays and electron beams

NASA Astrophysics Data System (ADS)

Ucar, Burcu; Yigitoglu, Ibrahim; Arslan Kabalay, Ipek; Altiparmak, Duygu; Kilicaslan, Sinem

2015-07-01

In this work, we discussed some of the applications which X-rays and electron beam used in radiotherapy for tumor treatments. This study has been performed at Radiation Oncology Department, Medicine Faculty in Gaziosmanpasa University by using the VARIAN CLINICA DHX linear accelerator which is operated in the range of 6 MeV - 15 MeV. Processes for the treatments that X-rays used for pancreas, bladder and prostate tumors and the processes that the electron beam used for some of the derm tumors are studied. Effects of X-rays and electron beams to treatments process are examined and the obtained results are presented comparatively.

Comparison of light and x-ray sensitometric responses of double-emulsion films for different processing conditions.

PubMed

Blendl, C; Buhr, E

2001-12-01

The effects of different film processing conditions on light and x-ray sensitometric responses were compared for a variety of double-emulsion x-ray films. The processing conditions were altered by changes of the developer temperature. Three different exposure variants were applied: x-ray sensitometry using two stepped neutral density attenuators between film and screens, simultaneous double-sided light sensitometry, and single-sided light sensitometry. 13 different types of double-emulsion x-ray films were investigated, among them three asymmetric films. In the special case of exposing the asymmetric films with the single-sided light sensitometer, a method was investigated where each side of the film is exposed at different locations and the sum effect is analyzed. From each sensitometric curve shape two parameters, the logarithmic speed (logS) and the average gradient (G), were evaluated. The results of this study can be summarized as follows: (1) Single-sided and double-sided light sensitometers revealed almost equal changes of logS when the processing conditions are altered. Thus, single-sided light sensitometers can serve as a substitute for double-sided light sensitometers provided that suited exposure methods are used and appropriate sensitometric parameters are evaluated. (2) Light sensitometry quantitatively indicated changes of the film processing that affect the x-ray speed. Hence, light sensitometry is a useful method to monitor changes in film processing.

Observation of Reverse Saturable Absorption of an X-ray Laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, B. I.; Cho, M. S.; Kim, M.

A nonlinear absorber in which the excited state absorption is larger than the ground state can undergo a process called reverse saturable absorption. It is a well-known phenomenon in laser physics in the optical regime, but is more difficult to generate in the x-ray regime, where fast nonradiative core electron transitions typically dominate the population kinetics during light matter interactions. Here, we report the first observation of decreasing x-ray transmission in a solid target pumped by intense x-ray free electron laser pulses. The measurement has been made below the K-absorption edge of aluminum, and the x-ray intensity ranges are 10more » 16 –10 17 W=cm 2. It has been confirmed by collisional radiative population kinetic calculations, underscoring the fast spectral modulation of the x-ray pulses and charge states relevant to the absorption and transmission of x-ray photons. The processes shown through detailed simulations are consistent with reverse saturable absorption, which would be the first observation of this phenomena in the x-ray regime. These light matter interactions provide a unique opportunity to investigate optical transport properties in the extreme state of matters, as well as affording the potential to regulate ultrafast x-ray freeelectron laser pulses.« less

Observation of Reverse Saturable Absorption of an X-ray Laser

DOE PAGES

Cho, B. I.; Cho, M. S.; Kim, M.; ...

2017-08-16

A nonlinear absorber in which the excited state absorption is larger than the ground state can undergo a process called reverse saturable absorption. It is a well-known phenomenon in laser physics in the optical regime, but is more difficult to generate in the x-ray regime, where fast nonradiative core electron transitions typically dominate the population kinetics during light matter interactions. Here, we report the first observation of decreasing x-ray transmission in a solid target pumped by intense x-ray free electron laser pulses. The measurement has been made below the K-absorption edge of aluminum, and the x-ray intensity ranges are 10more » 16 –10 17 W=cm 2. It has been confirmed by collisional radiative population kinetic calculations, underscoring the fast spectral modulation of the x-ray pulses and charge states relevant to the absorption and transmission of x-ray photons. The processes shown through detailed simulations are consistent with reverse saturable absorption, which would be the first observation of this phenomena in the x-ray regime. These light matter interactions provide a unique opportunity to investigate optical transport properties in the extreme state of matters, as well as affording the potential to regulate ultrafast x-ray freeelectron laser pulses.« less

Efficient material decomposition method for dual-energy X-ray cargo inspection system

NASA Astrophysics Data System (ADS)

Lee, Donghyeon; Lee, Jiseoc; Min, Jonghwan; Lee, Byungcheol; Lee, Byeongno; Oh, Kyungmin; Kim, Jaehyun; Cho, Seungryong

2018-03-01

Dual-energy X-ray inspection systems are widely used today for it provides X-ray attenuation contrast of the imaged object and also its material information. Material decomposition capability allows a higher detection sensitivity of potential targets including purposely loaded impurities in agricultural product inspections and threats in security scans for example. Dual-energy X-ray transmission data can be transformed into two basis material thickness data, and its transformation accuracy heavily relies on a calibration of material decomposition process. The calibration process in general can be laborious and time consuming. Moreover, a conventional calibration method is often challenged by the nonuniform spectral characteristics of the X-ray beam in the entire field-of-view (FOV). In this work, we developed an efficient material decomposition calibration process for a linear accelerator (LINAC) based high-energy X-ray cargo inspection system. We also proposed a multi-spot calibration method to improve the decomposition performance throughout the entire FOV. Experimental validation of the proposed method has been demonstrated by use of a cargo inspection system that supports 6 MV and 9 MV dual-energy imaging.

An update on X-ray reflection gratings developed for future missions

NASA Astrophysics Data System (ADS)

Miles, Drew

2018-01-01

X-ray reflection gratings are a key technology being studied for future X-ray spectroscopy missions, including the Lynx X-ray mission under consideration for the 2020 Decadal Survey. We present an update on the status of X-ray reflection gratings being developed at Penn State University, including current fabrication techniques and mass-replication processes and the latest diffraction efficiency results and resolving power measurements. Individual off-plane X-ray reflection gratings have exceeded the current Lynx requirements for both effective area and resolving power. Finally, we discuss internal projects that will advance the technology readiness level of these gratings.

Review of the applications of x-ray refraction and the x-ray waveguide phenomenon to estimation of film structures.

PubMed

Hayashi, Kouichi

2010-12-01

Based on our previous work, I review the applications of x-ray refraction and the x-ray waveguide phenomenon to organic and inorganic thin films in the present paper. Under grazing incidence conditions, observations of refracted x-rays and guided x-rays due to the x-ray waveguide phenomenon provide information about thin film structures, and thus have potential as alternative methods to x-ray reflectivity. To date, we have measured the spectra of the refracted x-rays and guided x-rays from end faces of thin films using white incident x-ray beams, and utilized them for the determination of film density and thickness. Some of this work is summarized in the present paper. At the end of this paper, I describe our recent achievement in this field, namely the in situ measurement of guided x-rays during the film degradation process due to strong synchrotron radiation damage. Moreover, I discuss the perspective of the present technique from the viewpoint of micro-characterization and real-time estimation of thin films.

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode

NASA Astrophysics Data System (ADS)

Ariyoshi, Tetsuya; Takane, Yuta; Iwasa, Jumpei; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

2018-04-01

In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6 mm and a trench depth of 300 µm was fabricated using a single-poly single-metal 0.35 µm process. X-rays with a tube voltage of 80 kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

Mastering multi-depth bio-chip patterns with DVD LBRs

NASA Astrophysics Data System (ADS)

Carson, Doug

2017-08-01

Bio chip and bio disc are rapidly growing technologies used in medical, health and other industries. While there are numerous unique designs and features, these products all rely on precise three-dimensional micro-fluidic channels or arrays to move, separate and combine samples under test. These bio chip and bio disc consumables are typically manufactured by molding these parts to a precise three-dimensional pattern on a negative metal stamper, or they can be made in smaller quantities using an appropriate curable resin and a negative mold/stamper. Stampers required for bio chips have been traditionally made using either micro machining or XY stepping lithography. Both of these technologies have their advantages as well as limitations when it comes to creating micro-fluidic patterns. Significant breakthroughs in continuous maskless lithography have enabled accurate and efficient manufacturing of micro-fluidic masters using LBRs (Laser Beam Recorders) and DRIE (Deep Reactive Ion Etching). The important advantages of LBR continuous lithography vs. XY stepping lithography and micro machining are speed and cost. LBR based continuous lithography is >100x faster than XY stepping lithography and more accurate than micro machining. Several innovations were required in order to create multi-depth patterns with sub micron accuracy. By combining proven industrial LBRs with DCA's G3-VIA pattern generator and DRIE, three-dimensional bio chip masters and stampers are being manufactured efficiently and accurately.

Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

NASA Astrophysics Data System (ADS)

Long, Shibing; Liu, Qi; Lv, Hangbing; Li, Yingtao; Wang, Yan; Zhang, Sen; Lian, Wentai; Zhang, Kangwei; Wang, Ming; Xie, Hongwei; Liu, Ming

2011-03-01

Resistive switching mechanism of zirconium oxide-based resistive random access memory (RRAM) devices composed of Cu-doped ZrO2 film sandwiched between an oxidizable electrode and an inert electrode was investigated. The Ag/ZrO2:Cu/Pt RRAM devices with crosspoint structure fabricated by e-beam evaporation and e-beam lithography show reproducible bipolar resistive switching. The linear I- V relationship of low resistance state (LRS) and the dependence of LRS resistance ( R ON) and reset current ( I reset) on the set current compliance ( I comp) indicate that the observed resistive switching characteristics of the Ag/ZrO2:Cu/Pt device should be ascribed to the formation and annihilation of localized conductive filaments (CFs). The physical origin of CF was further analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). CFs were directly observed by cross-sectional TEM. According to EDS and elemental mapping analysis, the main chemical composition of CF is determined by Ag atoms, coming from the Ag top electrode. On the basis of these experiments, we propose that the set and reset process of the device stem from the electrochemical reactions in the zirconium oxide under different external electrical stimuli.

NASA Tech Briefs, January 2004

NASA Technical Reports Server (NTRS)

2004-01-01

Topics covered include: Multisensor Instrument for Real-Time Biological Monitoring; Sensor for Monitoring Nanodevice-Fabrication Plasmas; Backed Bending Actuator; Compact Optoelectronic Compass; Micro Sun Sensor for Spacecraft; Passive IFF: Autonomous Nonintrusive Rapid Identification of Friendly Assets; Finned-Ladder Slow-Wave Circuit for a TWT; Directional Radio-Frequency Identification Tag Reader; Integrated Solar-Energy-Harvesting and -Storage Device; Event-Driven Random-Access-Windowing CCD Imaging System; Stroboscope Controller for Imaging Helicopter Rotors; Software for Checking State-charts; Program Predicts Broadband Noise from a Turbofan Engine; Protocol for a Delay-Tolerant Data-Communication Network; Software Implements a Space-Mission File-Transfer Protocol; Making Carbon-Nanotube Arrays Using Block Copolymers: Part 2; Modular Rake of Pitot Probes; Preloading To Accelerate Slow-Crack-Growth Testing; Miniature Blimps for Surveillance and Collection of Samples; Hybrid Automotive Engine Using Ethanol-Burning Miller Cycle; Fabricating Blazed Diffraction Gratings by X-Ray Lithography; Freeze-Tolerant Condensers; The StarLight Space Interferometer; Champagne Heat Pump; Controllable Sonar Lenses and Prisms Based on ERFs; Measuring Gravitation Using Polarization Spectroscopy; Serial-Turbo-Trellis-Coded Modulation with Rate-1 Inner Code; Enhanced Software for Scheduling Space-Shuttle Processing; Bayesian-Augmented Identification of Stars in a Narrow View; Spacecraft Orbits for Earth/Mars-Lander Radio Relay; and Self-Inflatable/Self-Rigidizable Reflectarray Antenna.

Deposition and characterization of B4C/CeO2 multilayers at 6.x nm extreme ultraviolet wavelengths

NASA Astrophysics Data System (ADS)

Sertsu, M. G.; Giglia, A.; Brose, S.; Park, D.; Wang, Z. S.; Mayer, J.; Juschkin, L.; Nicolosi, P.

2016-03-01

New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet (EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha (8 keV ) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers. Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design.

Extension of optical lithography by mask-litho integration with computational lithography

NASA Astrophysics Data System (ADS)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

The Mapping X-ray Fluorescence Spectrometer (MapX)

NASA Astrophysics Data System (ADS)

Sarrazin, P.; Blake, D. F.; Marchis, F.; Bristow, T.; Thompson, K.

2017-12-01

Many planetary surface processes leave traces of their actions as features in the size range 10s to 100s of microns. The Mapping X-ray Fluorescence Spectrometer (MapX) will provide elemental imaging at 100 micron spatial resolution, yielding elemental chemistry at a scale where many relict physical, chemical, or biological features can be imaged and interpreted in ancient rocks on planetary bodies and planetesimals. MapX is an arm-based instrument positioned on a rock or regolith with touch sensors. During an analysis, an X-ray source (tube or radioisotope) bombards the sample with X-rays or alpha-particles / gamma-rays, resulting in sample X-ray Fluorescence (XRF). X-rays emitted in the direction of an X-ray sensitive CCD imager pass through a 1:1 focusing lens (X-ray micro-pore Optic (MPO)) that projects a spatially resolved image of the X-rays onto the CCD. The CCD is operated in single photon counting mode so that the energies and positions of individual X-ray photons are recorded. In a single analysis, several thousand frames are both stored and processed in real-time. Higher level data products include single-element maps with a lateral spatial resolution of 100 microns and quantitative XRF spectra from ground- or instrument- selected Regions of Interest (ROI). XRF spectra from ROI are compared with known rock and mineral compositions to extrapolate the data to rock types and putative mineralogies. When applied to airless bodies and implemented with an appropriate radioisotope source for alpha-particle excitation, MapX will be able to analyze biogenic elements C, N, O, P, S, in addition to the cations of the rock-forming elements >Na, accessible with either X-ray or gamma-ray excitation. The MapX concept has been demonstrated with a series of lab-based prototypes and is currently under refinement and TRL maturation.

Grazing Incidence Wavefront Sensing and Verification of X-Ray Optics Performance

NASA Technical Reports Server (NTRS)

Saha, Timo T.; Rohrbach, Scott; Zhang, William W.

2011-01-01

Evaluation of interferometrically measured mirror metrology data and characterization of a telescope wavefront can be powerful tools in understanding of image characteristics of an x-ray optical system. In the development of soft x-ray telescope for the International X-Ray Observatory (IXO), we have developed new approaches to support the telescope development process. Interferometrically measuring the optical components over all relevant spatial frequencies can be used to evaluate and predict the performance of an x-ray telescope. Typically, the mirrors are measured using a mount that minimizes the mount and gravity induced errors. In the assembly and mounting process the shape of the mirror segments can dramatically change. We have developed wavefront sensing techniques suitable for the x-ray optical components to aid us in the characterization and evaluation of these changes. Hartmann sensing of a telescope and its components is a simple method that can be used to evaluate low order mirror surface errors and alignment errors. Phase retrieval techniques can also be used to assess and estimate the low order axial errors of the primary and secondary mirror segments. In this paper we describe the mathematical foundation of our Hartmann and phase retrieval sensing techniques. We show how these techniques can be used in the evaluation and performance prediction process of x-ray telescopes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yu-Peng; Zhang, Shu; Zhang, Shuang-Nan

We report the discovery of an anti-correlation between the soft and hard X-ray light curves of the X-ray binary Aql X-1 when bursting. This behavior may indicate that the corona is cooled by the soft X-ray shower fed by the type-I X-ray bursts, and that this process happens within a few seconds. Stacking the Aql X-1 light curves of type-I bursts, we find a shortage in the 40-50 keV band, delayed by 4.5 ± 1.4 s with respect to the soft X-rays. The photospheric radius expansion bursts are different in that neither a shortage nor an excess shows up inmore » the hard X-ray light curve.« less

Printability of 1 x reticle defects for submicron design rules

NASA Astrophysics Data System (ADS)

Schurz, Dan L.; Flack, Warren W.; Newman, Gary

1997-02-01

As the push for improved resolution in wafer lithography intensifies and 0.18 micrometer devices are nearing production, the potential impact of subhalf micron reticle defects has become a growing concern. There have been several studies on the printability of subhalf-micron defects on high resolution reduction photolithography equipment. These studies have been extended to 1X lithography systems and more recently to advanced sub-micron 1X steppers. Previous studies have indicated that 0.20 micrometer opaque and 0.25 micrometer clear pinhole defects were at the margins of adversely impacting 0.65 micrometer lithography on a 1X stepper. However, due to the limited number of defects at these sizes on the reticle, definitive conclusions on printability could not be drawn. An additional study, using a three dimensional (3D) optical lithography simulation program, has shown defect size, proximity to an adjacent feature, and feature pitch to be significant factors contributing to reticle defect printability. Using the simulation findings as a guide, a new reticle was designed to contain an increased number of clear pinhole and opaque defects in the 0.15 to 0.30 micrometer range located in multiple pitches of both horizontal and vertical line/space pairs. Defect printability was determined using a 1X i-line projection stepper with focus and exposure optimized for nominal critical dimensions of 0.65 micrometer. The reticle and wafer defects were measured using low voltage SEM metrology. Simulation and experimental results have shown that pitch is the most significant contributor in the printability of clear pinhole, opaque, square and aspect ratio defects. In general, the impact of defect proximity to an adjacent feature is less extreme than the effect of pitch, but is more pronounced for clear pinhole defects. This study suggests that simulation can be a useful tool to help lithographers understand the behavior of reticle defects for particular layout design parameters. Consequently, simulation can be used to develop realistic reticle defect specifications with mask vendors, and improve cost-effectiveness. Defect printability simulation can also be used to predict the effect of known defects on existing reticles to determine if these reticles should be used for manufacturing.

Solar X-Ray and Gamma-Ray Imaging Spectroscopy

NASA Astrophysics Data System (ADS)

Dennis, B. R.; Christe, S. D.; Shih, A. Y.; Holman, G. D.; Emslie, A. G.; Caspi, A.

2018-02-01

X-ray and gamma-ray Sun observations from a lunar-based observatory would provide unique information on solar atmosphere thermal and nonthermal processes. EUV and energetic neutral atom imaging spectroscopy would augment the scientific value.

Design and modeling of an additive manufactured thin shell for x-ray astronomy

NASA Astrophysics Data System (ADS)

Feldman, Charlotte; Atkins, Carolyn; Brooks, David; Watson, Stephen; Cochrane, William; Roulet, Melanie; Willingale, Richard; Doel, Peter

2017-09-01

Future X-ray astronomy missions require light-weight thin shells to provide large collecting areas within the weight limits of launch vehicles, whilst still delivering angular resolutions close to that of Chandra (0.5 arc seconds). Additive manufacturing (AM), also known as 3D printing, is a well-established technology with the ability to construct or `print' intricate support structures, which can be both integral and light-weight, and is therefore a candidate technique for producing shells for space-based X-ray telescopes. The work described here is a feasibility study into this technology for precision X-ray optics for astronomy and has been sponsored by the UK Space Agency's National Space Technology Programme. The goal of the project is to use a series of test samples to trial different materials and processes with the aim of developing a viable path for the production of an X-ray reflecting prototype for astronomical applications. The initial design of an AM prototype X-ray shell is presented with ray-trace modelling and analysis of the X-ray performance. The polishing process may cause print-through from the light-weight support structure on to the reflecting surface. Investigations in to the effect of the print-through on the X-ray performance of the shell are also presented.

High purity tungsten targets

NASA Technical Reports Server (NTRS)

1975-01-01

High purity tungsten, which is used for targets in X-ray tubes was considered for space processing. The demand for X-ray tubes was calculated using the growth rates for dental and medical X-ray machines. It is concluded that the cost benefits are uncertain.

Development of reflective optical systems for XUV projection lithography

NASA Astrophysics Data System (ADS)

Viswanathan, V. K.; Newnam, B. E.

We describe two full-field reflective reduction systems (1 and 6.25 sq cm image area) and one scanning system (25 mm x scan length image size) that meet the performance requirements for 0.1-micron resolution projection lithography using extreme-ultraviolet (XUV) wavelengths from 10 to 15 nm. These systems consist of two centered, symmetric, annular aspheric mirrors with 35 to 40 percent central obscuration, providing a reduction ratio of 3.3 x. Outstanding features include the remarkably low distortion (less than or = 10 nm) over the entire image field and the comparatively liberal tolerances on the mirror radii and alignment. While optimized annular illumination can improve the performance, the required performance can be met with full illumination, thereby allowing a simpler system design.

Experimental investigation of dynamic fragmentation of laser shock-loaded by soft recovery and X-ray radiography

NASA Astrophysics Data System (ADS)

Xin, Jianting; He, Weihua; Chu, Genbai; Gu, Yuqiu

2017-06-01

Dynamic fragmentation of metal under shock pressure is an important issue for both fundamental science and practical applications. And in recent decades, laser provides a promising shock loading technique for investigating the process of dynamic fragmentation under extreme condition application of high strain rate. Our group has performed experimental investigation of dynamic fragmentation under laser shock loading by soft recovery and X-ray radiography at SGC / ó prototype laser facility. The fragments under different loading pressures were recovered by PMP foam and analyzed by X-ray micro-tomography and the improved watershed method. The experiment result showed that the bilinear exponential distribution is more appropriate for representing the fragment size distribution. We also developed X-ray radiography technique. Owing to its inherent advantage over shadowgraph technique, X-ray radiography can potentially determine quantitatively material densities by measuring the X-ray transmission. Our group investigated dynamic process of microjetting by X-ray radiography technique, the recorded radiographic images show clear microjetting from the triangular grooves in the free surface of tin sample.

X-ray insights into star and planet formation.

PubMed

Feigelson, Eric D

2010-04-20

Although stars and planets form in cold environments, X-rays are produced in abundance by young stars. This review examines the implications of stellar X-rays for star and planet formation studies, highlighting the contributions of NASA's (National Aeronautics and Space Administration) Chandra X-ray Observatory. Seven topics are covered: X-rays from protostellar outflow shocks, X-rays from the youngest protostars, the stellar initial mass function, the structure of young stellar clusters, the fate of massive stellar winds, X-ray irradiation of protoplanetary disks, and X-ray flare effects on ancient meteorites. Chandra observations of star-forming regions often show dramatic star clusters, powerful magnetic reconnection flares, and parsec-scale diffuse plasma. X-ray selected samples of premain sequence stars significantly advance studies of star cluster formation, the stellar initial mass function, triggered star-formation processes, and protoplanetary disk evolution. Although X-rays themselves may not play a critical role in the physics of star formation, they likely have important effects on protoplanetary disks by heating and ionizing disk gases.

X-ray insights into star and planet formation

PubMed Central

Feigelson, Eric D.

2010-01-01

Although stars and planets form in cold environments, X-rays are produced in abundance by young stars. This review examines the implications of stellar X-rays for star and planet formation studies, highlighting the contributions of NASA’s (National Aeronautics and Space Administration) Chandra X-ray Observatory. Seven topics are covered: X-rays from protostellar outflow shocks, X-rays from the youngest protostars, the stellar initial mass function, the structure of young stellar clusters, the fate of massive stellar winds, X-ray irradiation of protoplanetary disks, and X-ray flare effects on ancient meteorites. Chandra observations of star-forming regions often show dramatic star clusters, powerful magnetic reconnection flares, and parsec-scale diffuse plasma. X-ray selected samples of premain sequence stars significantly advance studies of star cluster formation, the stellar initial mass function, triggered star-formation processes, and protoplanetary disk evolution. Although X-rays themselves may not play a critical role in the physics of star formation, they likely have important effects on protoplanetary disks by heating and ionizing disk gases. PMID:20404197

Eco-friendly electron beam lithography using water-developable resist material derived from biomass

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Oshima, Akihiro; Wakabayashi, Takanori; Kozawa, Takahiro; Tagawa, Seiichi

2012-07-01

We investigated the eco-friendly electron beam (EB) lithography using a high-sensitive negative type of water-developable resist material derived from biomass on hardmask layer for tri-layer processes. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. The images of 200 nm line and 800 nm space pattern with exposure dose of 7.0 μC/cm2 and CF4 etching selectivity of 2.2 with hardmask layer were provided by specific process conditions.

X-ray data booklet. Revision

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaughan, D.

A compilation of data is presented. Included are properties of the elements, electron binding energies, characteristic x-ray energies, fluorescence yields for K and L shells, Auger energies, energy levels for hydrogen-, helium-, and neonlike ions, scattering factors and mass absorption coefficients, and transmission bands of selected filters. Also included are selected reprints on scattering processes, x-ray sources, optics, x-ray detectors, and synchrotron radiation facilities. (WRF)

Technology Development for Nickel X-Ray Optics Enhancement

NASA Technical Reports Server (NTRS)

Bubarev, Mikhail; Ramsey, Brian; Engelhaupt, Darell

2008-01-01

We are developing grazing-incidence x-ray optics for high-energy astrophysics using the electroform-nickel replication process. In this process, mirror shells are fabricated by replication off super-polished cylindrical mandrels. The mirrors fabricated using this process have a demonstrated optical performance at the level of 11-12 arc seconds resolution (HPD) for 30 keV x rays. Future missions demand ever higher angular resolutions and this places stringent requirements on the quality of the mandrels, the precision of the metrology, and the mounting and alignment of the mirror shells in their housings. A progress report on recent technology developments in all these areas will be presented along with a discussion on possible post fabrication, in-situ improvement of the x-ray mirrors quality.

MMX-I: data-processing software for multimodal X-ray imaging and tomography.

PubMed

Bergamaschi, Antoine; Medjoubi, Kadda; Messaoudi, Cédric; Marco, Sergio; Somogyi, Andrea

2016-05-01

A new multi-platform freeware has been developed for the processing and reconstruction of scanning multi-technique X-ray imaging and tomography datasets. The software platform aims to treat different scanning imaging techniques: X-ray fluorescence, phase, absorption and dark field and any of their combinations, thus providing an easy-to-use data processing tool for the X-ray imaging user community. A dedicated data input stream copes with the input and management of large datasets (several hundred GB) collected during a typical multi-technique fast scan at the Nanoscopium beamline and even on a standard PC. To the authors' knowledge, this is the first software tool that aims at treating all of the modalities of scanning multi-technique imaging and tomography experiments.

Terahertz (THZ) Imaging

DTIC Science & Technology

2006-03-01

work in image processing for CWD and other security-related imaging with visual, x - ray , infrared and millimeter wave imagery was seen as a jumping-off...advantage of the fact that, unlike x - rays which offer only magnitude information, THz offers phase information. as well. While the magnitude contains...perspective are analyzed, specially compared with X - ray process tomography system. 5. Gregory, I.S.; Tribe, W.R.; Cole, B.E.; Baker, C.; Evans, M.J

Data processing for soft X-ray diagnostics based on GEM detector measurements for fusion plasma imaging

NASA Astrophysics Data System (ADS)

Czarski, T.; Chernyshova, M.; Pozniak, K. T.; Kasprowicz, G.; Byszuk, A.; Juszczyk, B.; Wojenski, A.; Zabolotny, W.; Zienkiewicz, P.

2015-12-01

The measurement system based on GEM - Gas Electron Multiplier detector is developed for X-ray diagnostics of magnetic confinement fusion plasmas. The Triple Gas Electron Multiplier (T-GEM) is presented as soft X-ray (SXR) energy and position sensitive detector. The paper is focused on the measurement subject and describes the fundamental data processing to obtain reliable characteristics (histograms) useful for physicists. So, it is the software part of the project between the electronic hardware and physics applications. The project is original and it was developed by the paper authors. Multi-channel measurement system and essential data processing for X-ray energy and position recognition are considered. Several modes of data acquisition determined by hardware and software processing are introduced. Typical measuring issues are deliberated for the enhancement of data quality. The primary version based on 1-D GEM detector was applied for the high-resolution X-ray crystal spectrometer KX1 in the JET tokamak. The current version considers 2-D detector structures initially for the investigation purpose. Two detector structures with single-pixel sensors and multi-pixel (directional) sensors are considered for two-dimensional X-ray imaging. Fundamental output characteristics are presented for one and two dimensional detector structure. Representative results for reference source and tokamak plasma are demonstrated.

Detection of Heating Processes in Coronal Loops by Soft X-ray Spectroscopy

NASA Astrophysics Data System (ADS)

Kawate, Tomoko; Narukage, Noriyuki; Ishikawa, Shin-nosuke; Imada, Shinsuke

2017-08-01

Imaging and Spectroscopic observations in the soft X-ray band will open a new window of the heating/acceleration/transport processes in the solar corona. The soft X-ray spectrum between 0.5 and 10 keV consists of the electron thermal free-free continuum and hot coronal lines such as O VIII, Fe XVII, Mg XI, Si XVII. Intensity of free-free continuum emission is not affected by the population of ions, whereas line intensities especially from highly ionized species have a sensitivity of the timescale of ionization/recombination processes. Thus, spectroscopic observations of both continuum and line intensities have a capability of diagnostics of heating/cooling timescales. We perform a 1D hydrodynamic simulation coupled with the time-dependent ionization, and calculate continuum and line intensities under different heat input conditions in a coronal loop. We also examine the differential emission measure of the coronal loop from the time-integrated soft x-ray spectra. As a result, line intensity shows a departure from the ionization equilibrium and shows different responses depending on the frequency of the heat input. Solar soft X-ray spectroscopic imager will be mounted in the sounding rocket experiment of the Focusing Optics X-ray Solar Imager (FOXSI). This observation will deepen our understanding of heating processes to solve the “coronal heating problem”.

Bayesian analysis of X-ray jet features of the high redshift quasar jets observed with Chandra

NASA Astrophysics Data System (ADS)

McKeough, Kathryn; Siemiginowska, Aneta; Kashyap, Vinay; Stein, Nathan; Cheung, Chi C.

2015-01-01

X-ray emission of powerful quasar jets may be a result of the inverse Compton (IC) process in which the Cosmic Microwave Background (CMB) photons gain energy by interactions with the jet's relativistic electrons. However, there is no definite evidence that IC/CMB process is responsible for the observed X-ray emission of large scale jets. A step toward understanding the X-ray emission process is to study the Radio and X-ray morphologies of the jet. Results from Chandra X-ray and multi-frequency VLA imaging observations of a sample of 11 high- redshift (z > 2) quasars with kilo-parsec scale radio jets are reported. The sample consists of a set of four z ≥ 3.6 flat-spectrum radio quasars, and seven intermediate redshift (z = 2.1 - 2.9) quasars comprised of four sources with integrated steep radio spectra and three with flat radio spectra.We implement a Bayesian image analysis program, Low-count Image Reconstruction and Analysis (LIRA) , to analyze jet features in the X-ray images of the high redshift quasars. Out of the 36 regions where knots are visible in the radio jets, nine showed detectable X-ray emission. Significant detections are based on the upper bound p-value test based on LIRA simulations. The X-ray and radio properties of this sample combined are examined and compared to lower-redshift samples.This work is supported in part by the National Science Foundation REU and the Department of Defense ASSURE programs under NSF Grant no.1262851 and by the Smithsonian Institution, and by NASA Contract NAS8-39073 to the Chandra X-ray Center (CXC). This research has made use of data obtained from the Chandra Data Archive and Chandra Source Catalog, and software provided by the CXC in the application packages CIAO, ChIPS, and Sherpa. Work is also supported by the Chandra grant GO4-15099X.

Nanoparticle photoresist studies for EUV lithography

NASA Astrophysics Data System (ADS)

Kasahara, Kazuki; Xu, Hong; Kosma, Vasiliki; Odent, Jeremy; Giannelis, Emmanuel P.; Ober, Christopher K.

2017-03-01

EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.

Observation of femtosecond X-ray interactions with matter using an X-ray–X-ray pump–probe scheme

PubMed Central

Inoue, Ichiro; Inubushi, Yuichi; Sato, Takahiro; Tono, Kensuke; Katayama, Tetsuo; Kameshima, Takashi; Ogawa, Kanade; Togashi, Tadashi; Owada, Shigeki; Amemiya, Yoshiyuki; Tanaka, Takashi; Hara, Toru

2016-01-01

Resolution in the X-ray structure determination of noncrystalline samples has been limited to several tens of nanometers, because deep X-ray irradiation required for enhanced resolution causes radiation damage to samples. However, theoretical studies predict that the femtosecond (fs) durations of X-ray free-electron laser (XFEL) pulses make it possible to record scattering signals before the initiation of X-ray damage processes; thus, an ultraintense X-ray beam can be used beyond the conventional limit of radiation dose. Here, we verify this scenario by directly observing femtosecond X-ray damage processes in diamond irradiated with extraordinarily intense (∼1019 W/cm2) XFEL pulses. An X-ray pump–probe diffraction scheme was developed in this study; tightly focused double–5-fs XFEL pulses with time separations ranging from sub-fs to 80 fs were used to excite (i.e., pump) the diamond and characterize (i.e., probe) the temporal changes of the crystalline structures through Bragg reflection. It was found that the pump and probe diffraction intensities remain almost constant for shorter time separations of the double pulse, whereas the probe diffraction intensities decreased after 20 fs following pump pulse irradiation due to the X-ray–induced atomic displacement. This result indicates that sub-10-fs XFEL pulses enable conductions of damageless structural determinations and supports the validity of the theoretical predictions of ultraintense X-ray–matter interactions. The X-ray pump–probe scheme demonstrated here would be effective for understanding ultraintense X-ray–matter interactions, which will greatly stimulate advanced XFEL applications, such as atomic structure determination of a single molecule and generation of exotic matters with high energy densities. PMID:26811449

Transforming Our Understanding of the X-ray Universe: The Imaging X-ray Polarimeter Explorer (IXPE)

NASA Technical Reports Server (NTRS)

Weisskopf, Martin C.; Bellazzini, Ronaldo; Costa, Enrico; Matt, Giorgio; Marshall, Herman; ODell, Stephen L.; Pavlov, George; Ramsey, Brian; Romani, Roger

2014-01-01

Accurate X-ray polarimetry can provide unique information on high-energy-astrophysical processes and sources. As there have been no meaningful X-ray polarization measurements of cosmic sources since our pioneering work in the 1970's, the time is ripe to explore this new parameter space in X-ray astronomy. To accomplish this requires a well-calibrated and well understood system that-particularly for an Explorer mission-has technical, cost, and schedule credibility. The system that we shall present satisfies these conditions, being based upon completely calibrated imaging- and polarization-sensitive detectors and proven X-ray-telescope technology.

Characterization of a-SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x-ray mask application

NASA Astrophysics Data System (ADS)

Jean, A.; Chaker, M.; Diawara, Y.; Leung, P. K.; Gat, E.; Mercier, P. P.; Pépin, H.; Gujrathi, S.; Ross, G. G.; Kieffer, J. C.

1992-10-01

Hydrogenated amorphous a-SixC1-x:H films with various compositions (0.2≤x≤0.8) were prepared by a radio frequency (rf 100 kHz) glow discharge decomposition of a silane and methane mixture diluted in argon. The deposition system used was a commercially available plasma enhanced chemical vapor deposition reactor allowing a high throughput (22 wafers of 4 in. diameter each run). The properties of the films such as thickness, density, and stress were investigated. The composition, including hydrogen content and Si/C ratio, and the structure of the films were systematically examined by means of several diagnostics including electron recoil detection, x-ray photoelectron spectroscopy, and infrared (IR) absorption analysis. Thickness and density of the films were dependent on the film composition, while the stress of the films was highly compressive (3×109-1×1010 dynes/cm2). Density was about 2.4 g/cm3 for nearly stoichiometric SiC films. The hydrogen content of the films was practically constant at 27 at. % over the whole investigated composition range. The IR analyses suggested that the structure of the silicon carbide films is inorganic-like over the whole range of compositions. From stoichiometric to carbon-rich films, the structure mainly consists of a tetrahedral network where silicon atoms are randomly replaced by carbon atoms and one hydrogen atom is bonded to silicon (SiH group). However, the presence of SiH2 groups and microvoids was observed in the structure of Si-rich silicon carbide films. Finally, the development of SiC membranes for x-ray lithography was presented including the control of film stress by means of rapid thermal annealing. Silicon carbide membranes of relatively high surface area (32×32 mm2) and showing high optical transparency (80%) were successfully fabricated.

Overview of options for generating high-brightness attosecond x-ray pulses at free-electron lasers and applications at the European XFEL

NASA Astrophysics Data System (ADS)

Serkez, S.; Geloni, G.; Tomin, S.; Feng, G.; Gryzlova, E. V.; Grum-Grzhimailo, A. N.; Meyer, M.

2018-02-01

The generation of attosecond, highbrightness x-ray pulses is a matter of great interest given their applications in the study of ultra-fast processes. In recent years, the production of x-ray pulses of high brightness, both in the soft and in the hard x-ray range, has been enabled by x-ray free-electron lasers (XFELs). In contrast to conventional quantum lasers, XFELs are based on the use of an ultra-relativistic electron beam as gain medium. They often work in the self-amplified spontaneous emission (SASE) regime, which provides pulses of duration down to a few femtoseconds, composed of several longitudinal modes. In order to further decrease the duration of these pulses, special methods need to be implemented. In this paper we review available methods, with particular focus on the x-ray laser-enhanced attosecond pulse generation, which is one of the most promising techniques. We illustrate the method using the SASE3 soft x-ray undulator of the European XFEL facility as a case study, emphasizing the importance of high-repetition rate attosecond x-ray pulses. The expected attosecond-level radiation output is used for simulations of sequential ionization processes in atoms in the case of ionization in the soft x-ray regime, demonstrating the importance of this opportunity for the user community.

Quantitative X-ray mapping, scatter diagrams and the generation of correction maps to obtain more information about your material

NASA Astrophysics Data System (ADS)

Wuhrer, R.; Moran, K.

2014-03-01

Quantitative X-ray mapping with silicon drift detectors and multi-EDS detector systems have become an invaluable analysis technique and one of the most useful methods of X-ray microanalysis today. The time to perform an X-ray map has reduced considerably with the ability to map minor and trace elements very accurately due to the larger detector area and higher count rate detectors. Live X-ray imaging can now be performed with a significant amount of data collected in a matter of minutes. A great deal of information can be obtained from X-ray maps. This includes; elemental relationship or scatter diagram creation, elemental ratio mapping, chemical phase mapping (CPM) and quantitative X-ray maps. In obtaining quantitative x-ray maps, we are able to easily generate atomic number (Z), absorption (A), fluorescence (F), theoretical back scatter coefficient (η), and quantitative total maps from each pixel in the image. This allows us to generate an image corresponding to each factor (for each element present). These images allow the user to predict and verify where they are likely to have problems in our images, and are especially helpful to look at possible interface artefacts. The post-processing techniques to improve the quantitation of X-ray map data and the development of post processing techniques for improved characterisation are covered in this paper.

Thermal analysis on x-ray tube for exhaust process

NASA Astrophysics Data System (ADS)

Kumar, Rakesh; Rao Ratnala, Srinivas; Veeresh Kumar, G. B.; Shivakumar Gouda, P. S.

2018-02-01

It is great importance in the use of X-rays for medical purposes that the dose given to both the patient and the operator is carefully controlled. There are many types of the X- ray tubes used for different applications based on their capacity and power supplied. In present thesis maxi ray 165 tube is analysed for thermal exhaust processes with ±5% accuracy. Exhaust process is usually done to remove all the air particles and to degasify the insert under high vacuum at 2e-05Torr. The tube glass is made up of Pyrex material, 95%Tungsten and 5%rhenium is used as target material for which the melting point temperature is 3350°C. Various materials are used for various parts; during the operation of X- ray tube these waste gases are released due to high temperature which in turn disturbs the flow of electrons. Thus, before using the X-ray tube for practical applications it has to undergo exhaust processes. Initially we build MX 165 model to carry out thermal analysis, and then we simulate the bearing temperature profiles with FE model to match with test results with ±5%accuracy. At last implement the critical protocols required for manufacturing processes like MF Heating, E-beam, Seasoning and FT.

A graphite crystal polarimeter for stellar X-ray astronomy.

NASA Technical Reports Server (NTRS)

Weisskopf, M. C.; Berthelsdorf, R.; Epstein, G.; Linke, R.; Mitchell, D.; Novick, R.; Wolff, R. S.

1972-01-01

The first crystal X-ray polarimeter to be used for X-ray astronomy is described. Polarization is measured by modulation of the X rays diffracted at an average 45 deg glancing angle from large, curved graphite crystal panels as these rotate about an axis parallel to the incident X-ray flux. Arrangement of the crystal panels, the design of the detector, and the signal-processing circuitry were optimized to minimize systematic effects produced by off-axis pointing of the rocket and cosmic ray induced events. The in-flight performance of the instrument in relation to the observed background signal is discussed.

Feasibility of Air Levitated Surface Stage for Lithography Tool

NASA Astrophysics Data System (ADS)

Tanaka, Keiichi

The application of light-weight drive technology into the lithography stage has been the current state of art because of minimization of power loss. The purpose of this article is to point out the so-called, "surface stage" which is composed of Lorentz forced 3 DOF (Degree Of Freedom) planar motor (x, y and theta z), air levitation (bearing) system and motor cooling system, is the most balanced concept for the next generation lithography through the verification of each component by manufacturing simple parts and test stand. This paper presents the design method and procedure, and experimental results of the air levitated surface stage which was conducted several years ago, however the author is convinced that the results are enough to adapt various developments of precision machining tool.

Real-Space x-ray tomographic reconstruction of randomly oriented objects with sparse data frames.

PubMed

Ayyer, Kartik; Philipp, Hugh T; Tate, Mark W; Elser, Veit; Gruner, Sol M

2014-02-10

Schemes for X-ray imaging single protein molecules using new x-ray sources, like x-ray free electron lasers (XFELs), require processing many frames of data that are obtained by taking temporally short snapshots of identical molecules, each with a random and unknown orientation. Due to the small size of the molecules and short exposure times, average signal levels of much less than 1 photon/pixel/frame are expected, much too low to be processed using standard methods. One approach to process the data is to use statistical methods developed in the EMC algorithm (Loh & Elser, Phys. Rev. E, 2009) which processes the data set as a whole. In this paper we apply this method to a real-space tomographic reconstruction using sparse frames of data (below 10(-2) photons/pixel/frame) obtained by performing x-ray transmission measurements of a low-contrast, randomly-oriented object. This extends the work by Philipp et al. (Optics Express, 2012) to three dimensions and is one step closer to the single molecule reconstruction problem.

Synchrotron radiation laboratories at the Bonn electron accelerators. a status report

NASA Astrophysics Data System (ADS)

Hormes, J.

1987-07-01

At the Physikalisches Institut of the University in Bonn experiments with synchrotron radiation were carried out ever since 1962. At the moment (June 1986) all work takes place in the SR-laboratory at the 2.5 GeV synchrotron. A 3.5 GeV stretcher ring (ELSA) is under construction and will come into operation at the end of 1986. This accelerator will also run as a storage ring for synchrotron radiation experiments and a laboratory to be used at this machine is also under consideration. The SR experiments which are carried out in Bonn try to take advantage of the fact that we are still using a high energy synchrotron for our work. Besides basic research also applied work is done using synchrotron radiation even as a production tool for X-ray lithography.

Radiation enhanced reactivation of herpes simplex virus: effect of caffeine.

PubMed

Hellman, K B; Lytle, C D; Bockstahler, L E

1976-09-01

Ultaviolet enhanced (Weigle) reactivation of UV-irradiated herpes simplex virus in UV-irradiated CV-1 monkey kidney cell monolayers was decreased by caffeine. X-ray enhanced reactivation of UV-irradiated virus in X-irradiated monolayers (X-ray reactivation) and UV- or X-ray-inactivated capacity of the cells to support unirradiated virus plaque formation were unaffected by caffeine. The results suggest that a caffeine-sensitive process is necessary for the expression of Weigle reactivation for herpes virus. Since cafeine did not significantly affect X-ray reactivation, different mechanisms may be responsible for the expression of Weigle reactivation and X-ray reactivation.

Hard X-ray Optics Technology Development for Astronomy at the Marshall Space Flight Center

NASA Technical Reports Server (NTRS)

Gubarev, Mikhail; Ramsey, Brian; Kilaru, Kiranmayee

2009-01-01

Grazing-incidence telescopes based on Wolter 1 geometry have delivered impressive advances in astrophysics at soft-x-ray wavelengths, while the hard xray region remains relatively unexplored at fine angular resolution and high sensitivities. The ability to perform ground-breaking science in the hard-x-ray energy range had been the motivation for technology developments aimed at fabricating low-cost, light-weight, high-quality x-ray mirrors. Grazing-incidence x-ray optics for high-energy astrophysical applications is being developed at MSFC using the electroform-nickel replication process.

Cadaveric and in vivo human joint imaging based on differential phase contrast by X-ray Talbot-Lau interferometry.

PubMed

Tanaka, Junji; Nagashima, Masabumi; Kido, Kazuhiro; Hoshino, Yoshihide; Kiyohara, Junko; Makifuchi, Chiho; Nishino, Satoshi; Nagatsuka, Sumiya; Momose, Atsushi

2013-09-01

We developed an X-ray phase imaging system based on Talbot-Lau interferometry and studied its feasibility for clinical diagnoses of joint diseases. The system consists of three X-ray gratings, a conventional X-ray tube, an object holder, an X-ray image sensor, and a computer for image processing. The joints of human cadavers and healthy volunteers were imaged, and the results indicated sufficient sensitivity to cartilage, suggesting medical significance. Copyright © 2012. Published by Elsevier GmbH.

Motorized Beam Alignment of a Commercial X-ray Diffractometer

NASA Technical Reports Server (NTRS)

Van Zandt, Noah R.; Myers, James F.; Rogers, Richard B

2013-01-01

X-ray diffraction (XRD) is a powerful analysis method that allows researchers to noninvasively probe the crystalline structure of a material. This includes the ability to determine the crystalline phases present, quantify surface residual stresses, and measure the distribution of crystallographic orientations. The Structures and Materials Division at the NASA Glenn Research Center (GRC) heavily uses the on-site XRD lab to characterize advanced metal alloys, ceramics, and polymers. One of the x-ray diffractometers in the XRD lab (Bruker D8 Discover) uses three different x-ray tubes (Cu, Cr, and Mn) for optimal performance over numerous material types and various experimental techniques. This requires that the tubes be switched out and aligned between experiments. This alignment maximizes the x-ray tube s output through an iterative process involving four set screws. However, the output of the x-ray tube cannot be monitored during the adjustment process due to standard radiation safety engineering controls that prevent exposure to the x-ray beam when the diffractometer doors are open. Therefore, the adjustment process is a very tedious series of blind adjustments, each followed by measurement of the output beam using a PIN diode after the enclosure doors are shut. This process can take up to 4 hr to perform. This technical memorandum documents an in-house project to motorize this alignment process. Unlike a human, motors are not harmed by x-ray radiation of the energy range used in this instrument. Therefore, using motors to adjust the set screws will allow the researcher to monitor the x-ray tube s output while making interactive adjustments from outside the diffractometer. The motorized alignment system consists of four motors, a motor controller, and a hand-held user interface module. Our goal was to reduce the alignment time to less than 30 min. The time available was the 10-week span of the Lewis' Educational and Research Collaborative Internship Project (LERCIP) summer internship program and the budget goal was $1200. In this report, we will describe our motorization design and discuss the results of its implementation.

X-ray agricultural product inspection: segmentation and classification

NASA Astrophysics Data System (ADS)

Casasent, David P.; Talukder, Ashit; Lee, Ha-Woon

1997-09-01

Processing of real-time x-ray images of randomly oriented and touching pistachio nuts for product inspection is considered. We describe the image processing used to isolate individual nuts (segmentation). This involves a new watershed transform algorithm. Segmentation results on approximately 3000 x-ray (film) and real time x-ray (linescan) nut images were excellent (greater than 99.9% correct). Initial classification results on film images are presented that indicate that the percentage of infested nuts can be reduced to 1.6% of the crop with only 2% of the good nuts rejected; this performance is much better than present manual methods and other automated classifiers have achieved.

Deep diode arrays for X-ray detection

NASA Technical Reports Server (NTRS)

Zemel, J. N.

1984-01-01

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Single-shot Monitoring of Ultrafast Processes via X-ray Streaking at a Free Electron Laser.

PubMed

Buzzi, Michele; Makita, Mikako; Howald, Ludovic; Kleibert, Armin; Vodungbo, Boris; Maldonado, Pablo; Raabe, Jörg; Jaouen, Nicolas; Redlin, Harald; Tiedtke, Kai; Oppeneer, Peter M; David, Christian; Nolting, Frithjof; Lüning, Jan

2017-08-03

The advent of x-ray free electron lasers has extended the unique capabilities of resonant x-ray spectroscopy techniques to ultrafast time scales. Here, we report on a novel experimental method that allows retrieving with a single x-ray pulse the time evolution of an ultrafast process, not only at a few discrete time delays, but continuously over an extended time window. We used a single x-ray pulse to resolve the laser-induced ultrafast demagnetisation dynamics in a thin cobalt film over a time window of about 1.6 ps with an excellent signal to noise ratio. From one representative single shot measurement we extract a spin relaxation time of (130 ± 30) fs with an average value, based on 193 single shot events of (113 ± 20) fs. These results are limited by the achieved experimental time resolution of 120 fs, and both values are in excellent agreement with previous results and theoretical modelling. More generally, this new experimental approach to ultrafast x-ray spectroscopy paves the way to the study of non-repetitive processes that cannot be investigated using traditional repetitive pump-probe schemes.

A whole-system approach to x-ray spectroscopy in cargo inspection systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Langeveld, Willem G. J.; Gozani, Tsahi; Ryge, Peter

The bremsstrahlung x-ray spectrum used in high-energy, high-intensity x-ray cargo inspection systems is attenuated and modified by the materials in the cargo in a Z-dependent way. Therefore, spectroscopy of the detected x rays yields information about the Z of the x-rayed cargo material. It has previously been shown that such ZSpectroscopy (Z-SPEC) is possible under certain circumstances. A statistical approach, Z-SCAN (Z-determination by Statistical Count-rate ANalysis), has also been shown to be effective, and it can be used either by itself or in conjunction with Z-SPEC when the x-ray count rate is too high for individual x-ray spectroscopy. Both techniquesmore » require fast x-ray detectors and fast digitization electronics. It is desirable (and possible) to combine all techniques, including x-ray imaging of the cargo, in a single detector array, to reduce costs, weight, and overall complexity. In this paper, we take a whole-system approach to x-ray spectroscopy in x-ray cargo inspection systems, and show how the various parts interact with one another. Faster detectors and read-out electronics are beneficial for both techniques. A higher duty-factor x-ray source allows lower instantaneous count rates at the same overall x-ray intensity, improving the range of applicability of Z-SPEC in particular. Using an intensity-modulated advanced x-ray source (IMAXS) allows reducing the x-ray count rate for cargoes with higher transmission, and a stacked-detector approach may help material discrimination for the lowest attenuations. Image processing and segmentation allow derivation of results for entire objects, and subtraction of backgrounds. We discuss R and D performed under a number of different programs, showing progress made in each of the interacting subsystems. We discuss results of studies into faster scintillation detectors, including ZnO, BaF{sub 2} and PbWO{sub 4}, as well as suitable photo-detectors, read-out and digitization electronics. We discuss high-duty-factor linear-accelerator x-ray sources and their associated requirements, and how such sources improve spectroscopic techniques. We further discuss how image processing techniques help in correcting for backgrounds and overlapping materials. In sum, we present an integrated picture of how to optimize a cargo inspection system for x-ray spectroscopy.« less

Detection of X-ray photons by solution-processed organic-inorganic perovskites

PubMed Central

Yakunin, Sergii; Sytnyk, Mykhailo; Kriegner, Dominik; Shrestha, Shreetu; Richter, Moses; Matt, Gebhard J.; Azimi, Hamed; Brabec, Christoph J.; Stangl, Julian; Kovalenko, Maksym V.; Heiss, Wolfgang

2017-01-01

The evolution of real-time medical diagnostic tools such as angiography and computer tomography from radiography based on photographic plates was enabled by the development of integrated solid-state X-ray photon detectors, based on conventional solid-state semiconductors. Recently, for optoelectronic devices operating in the visible and near infrared spectral regions, solution-processed organic and inorganic semiconductors have also attracted immense attention. Here we demonstrate a possibility to use such inexpensive semiconductors for sensitive detection of X-ray photons by direct photon-to-current conversion. In particular, methylammonium lead iodide perovskite (CH3NH3PbI3) offers a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms. Solution processed photodiodes as well as photoconductors are presented, exhibiting high values of X-ray sensitivity (up to 25 µC mGyair-1 cm-3) and responsivity (1.9×104 carriers/photon), which are commensurate with those obtained by the current solid-state technology. PMID:28553368

Atomic Processes in X-ray Photoioinzed Gas

NASA Technical Reports Server (NTRS)

Kallman, Timothy

2005-01-01

It has long been known that photoionization and photoabsorption play a dominant role in determining the state of gas in nebulae surrounding hot stars and in active galaxies. Recent observations of X-ray spectra demonstrate that these processes are also dominant in highly ionized gas near compact objects, and also affect the transmission of X-rays from the majority of astronomical sources. This has led to new insights into the understanding of what is going on in these sources. It has also pointed out the need for accurate atomic cross sections for photoionization and absorption, notably for processes involving inner shells. The xstar code can be used for calculating the heating, ionization and reprocessing of X-rays by gas in a range of ionization states and temperatures. It has recently been updated to include an improved treatment of inner shell transitions in iron. I will review the capabilities of xstar, the atomic data, and illustrate some applications to recent X-ray spectral observations.

Defect printability for high-exposure dose advanced packaging applications

NASA Astrophysics Data System (ADS)

Mikles, Max; Flack, Warren; Nguyen, Ha-Ai; Schurz, Dan

2003-12-01

Pellicles are used in semiconductor lithography to minimize printable defects and reduce reticle cleaning frequency. However, there are a growing number of microlithography applications, such as advanced packaging and nanotechnology, where it is not clear that pellicles always offer a significant benefit. These applications have relatively large critical dimensions and require ultra thick photoresists with extremely high exposure doses. Given that the lithography is performed in Class 100 cleanroom conditions, it is possible that the risk of defects from contamination is sufficiently low that pellicles would not be required on certain process layer reticles. The elimination of the pellicle requirement would provide a cost reduction by saving the original pellicle cost and eliminating future pellicle replacement and repair costs. This study examines the imaging potential of defects with reticle patterns and processes typical for gold-bump and solder-bump advanced packaging lithography. The test reticle consists of 30 to 90 μm octagonal contact patterns representative of advanced packaging reticles. Programmed defects are added that represent the range of particle sizes (3 to 30 μm) normally protected by the pellicle and that are typical of advanced packaging lithography cleanrooms. The reticle is exposed using an Ultratech Saturn Spectrum 300e2 1X stepper on wafers coated with a variety of ultra thick (30 to 100 μm) positive and negative-acting photoresists commonly used in advanced packaging. The experimental results show that in many cases smaller particles continue to be yield issues for the feature size and density typical of advanced packaging processes. For the two negative photoresists studied it appears that a pellicle is not required for protection from defects smaller than 10 to 15 μm depending on the photoresist thickness. Thus the decision on pellicle usage for these materials would need to be made based on the device fabrication process and the cleanliness of a fabrication facility. For the two positive photoresists studied it appears that a pellicle is required to protect from defects down to 3 μm defects depending on the photoresist thickness. This suggests that a pellicle should always be used for these materials. Since a typical fabrication facility would use both positive and negative photoresists it may be advantageous to use pellicles on all reticles simply to avoid confusion. The cost savings of not using a pellicle could easily be outweighed by the yield benefits of using one.

X-Rays from Saturn and its Rings

NASA Technical Reports Server (NTRS)

Bhardwaj, Anil; Elsner, Ron F.; Waite, J. Hunter; Gladstone, G. Randall; Cravens, Tom E.; Ford, Peter G.

2005-01-01

In January 2004 Saturn was observed by Chandra ACIS-S in two exposures, 00:06 to 11:00 UT on 20 January and 14:32 UT on 26 January to 01:13 UT on 27 January. Each continuous observation lasted for about one full Saturn rotation. These observations detected an X-ray flare from the Saturn's disk and indicate that the entire Saturnian X-ray emission is highly variable -- a factor of $\\sim$4 variability in brightness in a week time. The Saturn X-ray flare has a time and magnitude matching feature with the solar X-ray flare, which suggests that the disk X-ray emission of Saturn is governed by processes happening on the Sun. These observations also unambiguously detected X-rays from Saturn's rings. The X-ray emissions from rings are present mainly in the 0.45-0.6 keV band centered on the atomic OK$\\alpha$ fluorescence line at 525 eV: indicating the production of X-rays due to oxygen atoms in the water icy rings. The characteristics of X-rays from Saturn's polar region appear to be statistically consistent with those from its disk X-rays, suggesting that X-ray emission from the polar cap region might be an extension of the Saturn disk X-ray emission.

A highly sensitive x-ray imaging modality for hepatocellular carcinoma detection in vitro

NASA Astrophysics Data System (ADS)

Rand, Danielle; Walsh, Edward G.; Derdak, Zoltan; Wands, Jack R.; Rose-Petruck, Christoph

2015-01-01

Innovations that improve sensitivity and reduce cost are of paramount importance in diagnostic imaging. The novel x-ray imaging modality called spatial frequency heterodyne imaging (SFHI) is based on a linear arrangement of x-ray source, tissue, and x-ray detector, much like that of a conventional x-ray imaging apparatus. However, SFHI rests on a complete paradigm reversal compared to conventional x-ray absorption-based radiology: while scattered x-rays are carefully rejected in absorption-based x-ray radiology to enhance the image contrast, SFHI forms images exclusively from x-rays scattered by the tissue. In this study we use numerical processing to produce x-ray scatter images of hepatocellular carcinoma labeled with a nanoparticle contrast agent. We subsequently compare the sensitivity of SFHI in this application to that of both conventional x-ray imaging and magnetic resonance imaging (MRI). Although SFHI is still in the early stages of its development, our results show that the sensitivity of SFHI is an order of magnitude greater than that of absorption-based x-ray imaging and approximately equal to that of MRI. As x-ray imaging modalities typically have lower installation and service costs compared to MRI, SFHI could become a cost effective alternative to MRI, particularly in areas of the world with inadequate availability of MRI facilities.

AXSIS: Exploring the frontiers in attosecond X-ray science, imaging and spectroscopy.

PubMed

Kärtner, F X; Ahr, F; Calendron, A-L; Çankaya, H; Carbajo, S; Chang, G; Cirmi, G; Dörner, K; Dorda, U; Fallahi, A; Hartin, A; Hemmer, M; Hobbs, R; Hua, Y; Huang, W R; Letrun, R; Matlis, N; Mazalova, V; Mücke, O D; Nanni, E; Putnam, W; Ravi, K; Reichert, F; Sarrou, I; Wu, X; Yahaghi, A; Ye, H; Zapata, L; Zhang, D; Zhou, C; Miller, R J D; Berggren, K K; Graafsma, H; Meents, A; Assmann, R W; Chapman, H N; Fromme, P

2016-09-01

X-ray crystallography is one of the main methods to determine atomic-resolution 3D images of the whole spectrum of molecules ranging from small inorganic clusters to large protein complexes consisting of hundred-thousands of atoms that constitute the macromolecular machinery of life. Life is not static, and unravelling the structure and dynamics of the most important reactions in chemistry and biology is essential to uncover their mechanism. Many of these reactions, including photosynthesis which drives our biosphere, are light induced and occur on ultrafast timescales. These have been studied with high time resolution primarily by optical spectroscopy, enabled by ultrafast laser technology, but they reduce the vast complexity of the process to a few reaction coordinates. In the AXSIS project at CFEL in Hamburg, funded by the European Research Council, we develop the new method of attosecond serial X-ray crystallography and spectroscopy, to give a full description of ultrafast processes atomically resolved in real space and on the electronic energy landscape, from co-measurement of X-ray and optical spectra, and X-ray diffraction. This technique will revolutionize our understanding of structure and function at the atomic and molecular level and thereby unravel fundamental processes in chemistry and biology like energy conversion processes. For that purpose, we develop a compact, fully coherent, THz-driven atto-second X-ray source based on coherent inverse Compton scattering off a free-electron crystal, to outrun radiation damage effects due to the necessary high X-ray irradiance required to acquire diffraction signals. This highly synergistic project starts from a completely clean slate rather than conforming to the specifications of a large free-electron laser (FEL) user facility, to optimize the entire instrumentation towards fundamental measurements of the mechanism of light absorption and excitation energy transfer. A multidisciplinary team formed by laser-, accelerator,- X-ray scientists as well as spectroscopists and biochemists optimizes X-ray pulse parameters, in tandem with sample delivery, crystal size, and advanced X-ray detectors. Ultimately, the new capability, attosecond serial X-ray crystallography and spectroscopy, will be applied to one of the most important problems in structural biology, which is to elucidate the dynamics of light reactions, electron transfer and protein structure in photosynthesis.

Effect of wafer geometry on lithography chucking processes

NASA Astrophysics Data System (ADS)

Turner, Kevin T.; Sinha, Jaydeep K.

2015-03-01

Wafer flatness during exposure in lithography tools is critical and is becoming more important as feature sizes in devices shrink. While chucks are used to support and flatten the wafer during exposure, it is essential that wafer geometry be controlled as well. Thickness variations of the wafer and high-frequency wafer shape components can lead to poor flatness of the chucked wafer and ultimately patterning problems, such as defocus errors. The objective of this work is to understand how process-induced wafer geometry, resulting from deposited films with non-uniform stress, can lead to high-frequency wafer shape variations that prevent complete chucking in lithography scanners. In this paper, we discuss both the acceptable limits of wafer shape that permit complete chucking to be achieved, and how non-uniform residual stresses in films, either due to patterning or process non-uniformity, can induce high spatial frequency wafer shape components that prevent chucking. This paper describes mechanics models that relate non-uniform film stress to wafer shape and presents results for two example cases. The models and results can be used as a basis for establishing control strategies for managing process-induced wafer geometry in order to avoid wafer flatness-induced errors in lithography processes.

EUVL masks: paving the path for commercialization

NASA Astrophysics Data System (ADS)

Mangat, Pawitter J. S.; Hector, Scott D.

2001-09-01

Optical projection lithography has been the principal vehicle of semiconductor manufacturing for more than 20 years and is marching aggressively to satisfy the needs of semiconductor manufacturers for 100nm devices. However, the complexity of optical lithography continues to increase as wavelength reduction continues to 157nm. Extreme Ultraviolet Lithography (EUVL), with wavelength from 13-14 nm, is evolving as a leading next generation lithography option for semiconductor industry to stay on the path laid by Moore's Law. Masks are a critical part of the success of any technology and are considered to be high risk both for optical lithography and NGL technologies for sub-100nm lithography. Two key areas of EUV mask fabrication are reflective multilayer deposition and absorber patterning. In the case of reflective multilayers, delivering defect free multilayers for mask blanks is the biggest challenge. Defect mitigation is being explored as a possible option to smooth the multilayer defects in addition to optimization of the deposition process to reduce defect density. The mask patterning process needs focus on the defect-free absorber stack patterning process, mask cleaning, inspection and repair. In addition, there is considerable effort to understand by simulations, the defect printability, thermal and mechanical distortions, and non-telecentric illumination, to mention a few. To protect the finished mask from defects added during use, a removable pellicle strategy combined with thermophoretic protection during exposure is being developed. Recent migration to square form factor using low thermal expansion material (LTEM) is advantageous as historical developments in optical masks can be applied to EUV mask patterning. This paper addresses recent developments in the EUV mask patterning and highlights critical manufacturing process controls needed to fabricate defect-free full field masks with CD and image placement specifications for sub-70nm node lithography. No technology can be implemented without establishing the commercial infrastructure. The rising cost seems to be a major issue affecting the technology development. With respect to mask fabrication for commercial availability, a virtual mask shop analysis is presented that indicates that the process cost for EUVL masks are comparable to the high end optical mask with a reasonable yield. However, the cost for setting up a new mask facility is considerably high.

Synthesis and characterization of nanocrystalline graphite from coconut shell with heating process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wachid, Frischa M., E-mail: frischamw@yahoo.com, E-mail: adhiyudhaperkasa@yahoo.com, E-mail: afandisar@yahoo.com, E-mail: nurulrosyidah92@gmail.com, E-mail: darminto@physics.its.ac.id; Perkasa, Adhi Y., E-mail: frischamw@yahoo.com, E-mail: adhiyudhaperkasa@yahoo.com, E-mail: afandisar@yahoo.com, E-mail: nurulrosyidah92@gmail.com, E-mail: darminto@physics.its.ac.id; Prasetya, Fandi A., E-mail: frischamw@yahoo.com, E-mail: adhiyudhaperkasa@yahoo.com, E-mail: afandisar@yahoo.com, E-mail: nurulrosyidah92@gmail.com, E-mail: darminto@physics.its.ac.id

Graphite were synthesized and characterized by heating process of coconut shell with varying temperature (400, 800 and 1000°C) and holding time (3 and 5 hours). After heating process, the samples were characterized by X-ray diffraction (XRD) and analyzed by X'pert HighScore Plus Software, Scanning Electron Microcope-Energy Dispersive X-Ray (SEM-EDX) and Transmission Electron Microscope-Energy Dispersive X-Ray (TEM-EDX). Graphite and londsdaelite phase were analyzed by XRD. According to EDX analysis, the sample was heated in 1000°C got the highest content of carbon. The amorphous carbon and nanocrystalline graphite were observed by SEM-EDX and TEM-EDX.

A study of the x-ray image quality improvement in the examination of the respiratory system based on the new image processing technique

NASA Astrophysics Data System (ADS)

Nagai, Yuichi; Kitagawa, Mayumi; Torii, Jun; Iwase, Takumi; Aso, Tomohiko; Ihara, Kanyu; Fujikawa, Mari; Takeuchi, Yumiko; Suzuki, Katsumi; Ishiguro, Takashi; Hara, Akio

2014-03-01

Recently, the double contrast technique in a gastrointestinal examination and the transbronchial lung biopsy in an examination for the respiratory system [1-3] have made a remarkable progress. Especially in the transbronchial lung biopsy, better quality of x-ray fluoroscopic images is requested because this examination is performed under a guidance of x-ray fluoroscopic images. On the other hand, various image processing methods [4] for x-ray fluoroscopic images have been developed as an x-ray system with a flat panel detector [5-7] is widely used. A recursive filtering is an effective method to reduce a random noise in x-ray fluoroscopic images. However it has a limitation for its effectiveness of a noise reduction in case of a moving object exists in x-ray fluoroscopic images because the recursive filtering is a noise reduction method by adding last few images. After recursive filtering a residual signal was produced if a moving object existed in x-ray images, and this residual signal disturbed a smooth procedure of the examinations. To improve this situation, new noise reduction method has been developed. The Adaptive Noise Reduction [ANR] is the brand-new noise reduction technique which can be reduced only a noise regardless of the moving object in x-ray fluoroscopic images. Therefore the ANR is a very suitable noise reduction method for the transbronchial lung biopsy under a guidance of x-ray fluoroscopic images because the residual signal caused of the moving object in x-ray fluoroscopic images is never produced after the ANR. In this paper, we will explain an advantage of the ANR by comparing of a performance between the ANR images and the conventional recursive filtering images.

Relationship between radiation dose reduction and image quality change in photostimulable phosphor luminescence X-ray imaging systems.

PubMed

Sakurai, T; Kawamata, R; Kozai, Y; Kaku, Y; Nakamura, K; Saito, M; Wakao, H; Kashima, I

2010-05-01

The aim of the study was to clarify the change in image quality upon X-ray dose reduction and to re-analyse the possibility of X-ray dose reduction in photostimulable phosphor luminescence (PSPL) X-ray imaging systems. In addition, the study attempted to verify the usefulness of multiobjective frequency processing (MFP) and flexible noise control (FNC) for X-ray dose reduction. Three PSPL X-ray imaging systems were used in this study. Modulation transfer function (MTF), noise equivalent number of quanta (NEQ) and detective quantum efficiency (DQE) were evaluated to compare the basic physical performance of each system. Subjective visual evaluation of diagnostic ability for normal anatomical structures was performed. The NEQ, DQE and diagnostic ability were evaluated at base X-ray dose, and 1/3, 1/10 and 1/20 of the base X-ray dose. The MTF of the systems did not differ significantly. The NEQ and DQE did not necessarily depend on the pixel size of the system. The images from all three systems had a higher diagnostic utility compared with conventional film images at the base and 1/3 X-ray doses. The subjective image quality was better at the base X-ray dose than at 1/3 of the base dose in all systems. The MFP and FNC-processed images had a higher diagnostic utility than the images without MFP and FNC. The use of PSPL imaging systems may allow a reduction in the X-ray dose to one-third of that required for conventional film. It is suggested that MFP and FNC are useful for radiation dose reduction.

Drawing lithography for microneedles: a review of fundamentals and biomedical applications.

PubMed

Lee, Kwang; Jung, Hyungil

2012-10-01

A microneedle is a three-dimensional (3D) micromechanical structure and has been in the spotlight recently as a drug delivery system (DDS). Because a microneedle delivers the target drug after penetrating the skin barrier, the therapeutic effects of microneedles proceed from its 3D structural geometry. Various types of microneedles have been fabricated using subtractive micromanufacturing methods which are based on the inherently planar two-dimensional (2D) geometries. However, traditional subtractive processes are limited for flexible structural microneedles and makes functional biomedical applications for efficient drug delivery difficult. The authors of the present study propose drawing lithography as a unique additive process for the fabrication of a microneedle directly from 2D planar substrates, thus overcoming a subtractive process shortcoming. The present article provides the first overview of the principal drawing lithography technology: fundamentals and biomedical applications. The continuous drawing technique for an ultrahigh-aspect ratio (UHAR) hollow microneedle, stepwise controlled drawing technique for a dissolving microneedle, and drawing technique with antidromic isolation for a hybrid electro-microneedle (HEM) are reviewed, and efficient biomedical applications by drawing lithography-mediated microneedles as an innovative drug and gene delivery system are described. Drawing lithography herein can provide a great breakthrough in the development of materials science and biotechnology. Copyright © 2012 Elsevier Ltd. All rights reserved.

Study on nondestructive detection system based on x-ray for wire ropes conveyer belt

NASA Astrophysics Data System (ADS)

Miao, Changyun; Shi, Boya; Wan, Peng; Li, Jie

2008-03-01

A nondestructive detection system based on X-ray for wire ropes conveyer belt is designed by X-ray detection technology. In this paper X-ray detection principle is analyzed, a design scheme of the system is presented; image processing of conveyer belt is researched and image processing algorithms are given; X-ray acquisition receiving board is designed with the use of FPGA and DSP; the software of the system is programmed by C#.NET on WINXP/WIN2000 platform. The experiment indicates the system can implement remote real-time detection of wire ropes conveyer belt images, find faults and give an alarm in time. The system is direct perceived, strong real-time and high accurate. It can be used for fault detection of wire ropes conveyer belts in mines, ports, terminals and other fields.

MMX-I: data-processing software for multimodal X-ray imaging and tomography

PubMed Central

Bergamaschi, Antoine; Medjoubi, Kadda; Messaoudi, Cédric; Marco, Sergio; Somogyi, Andrea

2016-01-01

A new multi-platform freeware has been developed for the processing and reconstruction of scanning multi-technique X-ray imaging and tomography datasets. The software platform aims to treat different scanning imaging techniques: X-ray fluorescence, phase, absorption and dark field and any of their combinations, thus providing an easy-to-use data processing tool for the X-ray imaging user community. A dedicated data input stream copes with the input and management of large datasets (several hundred GB) collected during a typical multi-technique fast scan at the Nanoscopium beamline and even on a standard PC. To the authors’ knowledge, this is the first software tool that aims at treating all of the modalities of scanning multi-technique imaging and tomography experiments. PMID:27140159

Energy determination in industrial X-ray processing facilities

NASA Astrophysics Data System (ADS)

Cleland, M. R.; Gregoire, O.; Stichelbaut, F.; Gomola, I.; Galloway, R. A.; Schlecht, J.

2005-12-01

In industrial irradiation facilities, the determination of maximum photon or electron energy is important for regulated processes, such as food irradiation, and for assurance of treatment reproducibility. With electron beam irradiators, this has been done by measuring the depth-dose distribution in a homogeneous material. For X-ray irradiators, an analogous method has not yet been recommended. This paper describes a procedure suitable for typical industrial irradiation processes, which is based on common practice in the field of therapeutic X-ray treatment. It utilizes a measurement of the slope of the exponential attenuation curve of X-rays in a thick stack of polyethylene plates. Monte Carlo simulations and experimental tests have been performed to verify the suitability and accuracy of the method between 3 MeV and 8 MeV.

TOPICAL REVIEW: Human soft tissue analysis using x-ray or gamma-ray techniques

NASA Astrophysics Data System (ADS)

Theodorakou, C.; Farquharson, M. J.

2008-06-01

This topical review is intended to describe the x-ray techniques used for human soft tissue analysis. X-ray techniques have been applied to human soft tissue characterization and interesting results have been presented over the last few decades. The motivation behind such studies is to provide improved patient outcome by using the data obtained to better understand a disease process and improve diagnosis. An overview of theoretical background as well as a complete set of references is presented. For each study, a brief summary of the methodology and results is given. The x-ray techniques include x-ray diffraction, x-ray fluorescence, Compton scattering, Compton to coherent scattering ratio and attenuation measurements. The soft tissues that have been classified using x-rays or gamma rays include brain, breast, colon, fat, kidney, liver, lung, muscle, prostate, skin, thyroid and uterus.

Chandra X-Ray Observatory Observations of the Jovian System

NASA Technical Reports Server (NTRS)

Elsner, R. F.; Bhardwaj, A.; Gladstone, R.; Waite, J. H.; Ford, P.; Branduari-Raymont, G.

2005-01-01

Chandra X-ray Observatory (CXO) and XMM-Newton observations of x-rays from the Jovian system have answered questions that arose from early observations with the Einstein and Rosat X-ray Observatories, but in the process of vastly increasing our knowledge of x-ray emission from Jupiter and its environs they have also raised new questions and point to new opportunities for future studies. We will review recent x-ray results on the Jovian system, from the point of view of the CXO, and discuss various questions that have arisen in the course of our studies. We will discuss prospects for more observations in the immediate future, and how they might address open questions. Finally we will briefly describe ways in which an imaging x-ray spectrometer in the vicinity of the Jovian system could provide a wealth of data and results concerning Jupiter's x-ray auroral and disk emission, elemental abundance measurements for the Galilean moons, and detailed studies of x-ray emission from the Io Plasma Torus.

Detecting element specific electrons from a single cobalt nanocluster with synchrotron x-ray scanning tunneling microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kersell, Heath; Shirato, Nozomi; Cummings, Marvin

We use a nanofabricated scanning tunneling microscope tip as a detector to investigate local X-ray induced tunneling and electron emission from a single cobalt nanocluster on a Au(111) surface. The tip-detector is positioned a few angstroms above the nanocluster, and ramping the incident X-ray energy across the Co photoabsorption K-edge enables the detection of element specific electrons. Atomic-scale spatial dependent changes in the X-ray absorption cross section are directly measured by taking the X-ray induced current as a function of X-ray energy. From the measured sample and tip currents, element specific X-ray induced current components can be separated and therebymore » the corresponding yields for the X-ray induced processes of the single cobalt nanocluster can be determined. The detection of element specific synchrotron X-ray induced electrons of a single nanocluster opens a new avenue for materials characterization on a one particle at-a-time basis.« less

Detecting element specific electrons from a single cobalt nanocluster with synchrotron x-ray scanning tunneling microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kersell, Heath; Shirato, Nozomi; Cummings, Marvin

Here, we use a nanofabricated scanning tunneling microscope tip as a detector to investigate local X-ray induced tunneling and electron emission from a single cobalt nanocluster on a Au(111) surface. The tip-detector is positioned a few angstroms above the nanocluster, and ramping the incident X-ray energy across the Co photoabsorption K-edge enables the detection of element specific electrons. Atomic-scale spatial dependent changes in the X-ray absorption cross section are directly measured by taking the X-ray induced current as a function of X-ray energy. From the measured sample and tip currents, element specific X-ray induced current components can be separated andmore » thereby the corresponding yields for the X-ray induced processes of the single cobalt nanocluster can be determined. The detection of element specific synchrotron X-ray induced electrons of a single nanocluster opens a new avenue for materials characterization on a one particle at-a-time basis.« less

Crystals for krypton helium-alpha line emission microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koch, Jeffrey A.; Haugh, Michael J.

2018-04-17

A system for reflecting and recording x-ray radiation from an x-ray emitting event to characterize the event. A crystal is aligned to receive radiation along a first path from an x-ray emitting event. Upon striking the crystal, the x-ray reflects from the crystal along a second path due to a reflection plane of the crystal defined by one of the following Miller indices: (9,7,3) or (11,3,3). Exemplary crystalline material is germanium. The x-rays are reflected to a detector aligned to receive reflected x-rays that are reflected from the crystal along the second path and the detector generates a detector signalmore » in response to x-rays impacting the detector. The detector may include a CCD electronic detector, film plates, or any other detector type. A processor receives and processes the detector signal to generate reflection data representing the x-rays emitted from the x-ray emitting event.« less

Detecting element specific electrons from a single cobalt nanocluster with synchrotron x-ray scanning tunneling microscopy

DOE PAGES

Kersell, Heath; Shirato, Nozomi; Cummings, Marvin; ...

2017-09-05

Here, we use a nanofabricated scanning tunneling microscope tip as a detector to investigate local X-ray induced tunneling and electron emission from a single cobalt nanocluster on a Au(111) surface. The tip-detector is positioned a few angstroms above the nanocluster, and ramping the incident X-ray energy across the Co photoabsorption K-edge enables the detection of element specific electrons. Atomic-scale spatial dependent changes in the X-ray absorption cross section are directly measured by taking the X-ray induced current as a function of X-ray energy. From the measured sample and tip currents, element specific X-ray induced current components can be separated andmore » thereby the corresponding yields for the X-ray induced processes of the single cobalt nanocluster can be determined. The detection of element specific synchrotron X-ray induced electrons of a single nanocluster opens a new avenue for materials characterization on a one particle at-a-time basis.« less

X-ray Probes of Magnetospheric Interactions with Jupiter's Auroral zones, the Galilean Satellites, and the Io Plasma Torus

NASA Technical Reports Server (NTRS)

Elsner, R. F.; Ramsey, B. D.; Waite, J. H., Jr.; Rehak, P.; Johnson, R. E.; Cooper, J. F.; Swartz, D. A.

2004-01-01

Remote observations with the Chandra X-ray Observatory and the XMM-Newton Observatory have shown that the Jovian system is a source of x-rays with a rich and complicated structure. The planet's polar auroral zones and its disk are powerful sources of x-ray emission. Chandra observations revealed x-ray emission from the Io Plasma Torus and from the Galilean moons Io, Europa, and possibly Ganymede. The emission from these moons is certainly due to bombardment of their surfaces of highly energetic protons, oxygen and sulfur ions from the region near the Torus exciting atoms in their surfaces and leading to fluorescent x-ray emission lines. Although the x-ray emission from the Galilean moons is faint when observed fiom Earth orbit, an imaging x-ray spectrometer in orbit around these moons, operating at 200 eV and above with 150 eV energy resolution, would provide a detailed mapping (down to 40 m spatial resolution) of the elemental composition in their surfaces. Here we describe the physical processes leading to x-ray emission fiom the surfaces of Jupiter's moons and the instrumental properties, as well as energetic ion flux models or measurements, required to map the elemental composition of their surfaces. We discuss the proposed scenarios leading to possible surface compositions. For Europa, the two most extreme are (1) a patina produced by exogenic processes such as meteoroid bombardment and ion implantation, and (2) upwelling of material fiom the subsurface ocean. We also describe the characteristics of X - m , an imaging x-ray spectrometer under going a feasibility study for the JIM0 mission, with the ultimate goal of providing unprecedented x-ray studies of the elemental composition of the surfaces of Jupiter's icy moons and Io, as well as of Jupiter's auroral x-ray emission.

Measuring silicon pore optics

NASA Astrophysics Data System (ADS)

Vacanti, Giuseppe; Barrière, Nicolas; Bavdaz, Marcos; Chatbi, Abdelhakim; Collon, Maximilien; Dekker, Daniëlle; Girou, David; Günther, Ramses; van der Hoeven, Roy; Krumrey, Michael; Landgraf, Boris; Müller, Peter; Schreiber, Swenja; Vervest, Mark; Wille, Eric

2017-09-01

While predictions based on the metrology (local slope errors and detailed geometrical details) play an essential role in controlling the development of the manufacturing processes, X-ray characterization remains the ultimate indication of the actual performance of Silicon Pore Optics (SPO). For this reason SPO stacks and mirror modules are routinely characterized at PTB's X-ray Pencil Beam Facility at BESSY II. Obtaining standard X-ray results quickly, right after the production of X-ray optics is essential to making sure that X-ray results can inform decisions taken in the lab. We describe the data analysis pipeline in operations at cosine, and how it allows us to go from stack production to full X-ray characterization in 24 hours.

Software for X-Ray Images Calculation of Hydrogen Compression Device in Megabar Pressure Range

NASA Astrophysics Data System (ADS)

Egorov, Nikolay; Bykov, Alexander; Pavlov, Valery

2007-06-01

Software for x-ray images simulation is described. The software is a part of x-ray method used for investigation of an equation of state of hydrogen in a megabar pressure range. A graphical interface that clearly and simply allows users to input data for x-ray image calculation: properties of the studied device, parameters of the x-ray radiation source, parameters of the x-ray radiation recorder, the experiment geometry; to represent the calculation results and efficiently transmit them to other software for processing. The calculation time is minimized. This makes it possible to perform calculations in a dialogue regime. The software is written in ``MATLAB'' system.

Is there a UV/X-ray connection in IRAS 13224-3809?

NASA Astrophysics Data System (ADS)

Buisson, D. J. K.; Lohfink, A. M.; Alston, W. N.; Cackett, E. M.; Chiang, C.-Y.; Dauser, T.; De Marco, B.; Fabian, A. C.; Gallo, L. C.; García, J. A.; Jiang, J.; Kara, E.; Middleton, M. J.; Miniutti, G.; Parker, M. L.; Pinto, C.; Uttley, P.; Walton, D. J.; Wilkins, D. R.

2018-04-01

We present results from the optical, ultraviolet, and X-ray monitoring of the NLS1 galaxy IRAS 13224-3809 taken with Swift and XMM-Newton during 2016. IRAS 13224-3809 is the most variable bright AGN in the X-ray sky and shows strong X-ray reflection, implying that the X-rays strongly illuminate the inner disc. Therefore, it is a good candidate to study the relationship between coronal X-ray and disc UV emission. However, we find no correlation between the X-ray and UV flux over the available ˜40 d monitoring, despite the presence of strong X-ray variability and the variable part of the UV spectrum being consistent with irradiation of a standard thin disc. This means either that the X-ray flux which irradiates the UV emitting outer disc does not correlate with the X-ray flux in our line of sight and/or that another process drives the majority of the UV variability. The former case may be due to changes in coronal geometry, absorption or scattering between the corona and the disc.

In-Process Atomic-Force Microscopy (AFM) Based Inspection

PubMed Central

Mekid, Samir

2017-01-01

A new in-process atomic-force microscopy (AFM) based inspection is presented for nanolithography to compensate for any deviation such as instantaneous degradation of the lithography probe tip. Traditional method used the AFM probes for lithography work and retract to inspect the obtained feature but this practice degrades the probe tip shape and hence, affects the measurement quality. This paper suggests a second dedicated lithography probe that is positioned back-to-back to the AFM probe under two synchronized controllers to correct any deviation in the process compared to specifications. This method shows that the quality improvement of the nanomachining, in progress probe tip wear, and better understanding of nanomachining. The system is hosted in a recently developed nanomanipulator for educational and research purposes. PMID:28561747

Nanofabrication on unconventional substrates using transferred hard masks

DOE PAGES

Li, Luozhou; Bayn, Igal; Lu, Ming; ...

2015-01-15

Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantationmore » are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.« less

EUV lithography using water-developable resist material derived from biomass

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ichikawa, Takumi; Sekiguchi, Atsushi; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2013-03-01

A water-developable resist material which had specific desired properties such as high sensitivity of 5.0 μC/cm2, thermal stability of 160 °C, suitable calculated linear absorption coefficients of 13.5 nm, and acceptable CF4 etch selectivity was proposed using EB lithography for EUV lithography. A water developable resist material derived from biomass is expected for non-petroleum resources, environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. 100 nm line and 400 nm space patterning images with exposure dose of 5.0 μC/cm2 were provided by specific process conditions of EB lithography. The developed trehalose derivatives with hydroxyl groups and EB sensitive groups in the water-developable resist material derived from biomass were applicable to future development of high-sensitive and resolution negative type of water-developable resist material as a novel chemical design.

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers.

PubMed

Huang, Cheng; Moosmann, Markus; Jin, Jiehong; Heiler, Tobias; Walheim, Stefan; Schimmel, Thomas

2012-01-01

A rapid and cost-effective lithographic method, polymer blend lithography (PBL), is reported to produce patterned self-assembled monolayers (SAM) on solid substrates featuring two or three different chemical functionalities. For the pattern generation we use the phase separation of two immiscible polymers in a blend solution during a spin-coating process. By controlling the spin-coating parameters and conditions, including the ambient atmosphere (humidity), the molar mass of the polystyrene (PS) and poly(methyl methacrylate) (PMMA), and the mass ratio between the two polymers in the blend solution, the formation of a purely lateral morphology (PS islands standing on the substrate while isolated in the PMMA matrix) can be reproducibly induced. Either of the formed phases (PS or PMMA) can be selectively dissolved afterwards, and the remaining phase can be used as a lift-off mask for the formation of a nanopatterned functional silane monolayer. This "monolayer copy" of the polymer phase morphology has a topographic contrast of about 1.3 nm. A demonstration of tuning of the PS island diameter is given by changing the molar mass of PS. Moreover, polymer blend lithography can provide the possibility of fabricating a surface with three different chemical components: This is demonstrated by inducing breath figures (evaporated condensed entity) at higher humidity during the spin-coating process. Here we demonstrate the formation of a lateral pattern consisting of regions covered with 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) and (3-aminopropyl)triethoxysilane (APTES), and at the same time featuring regions of bare SiO(x). The patterning process could be applied even on meter-sized substrates with various functional SAM molecules, making this process suitable for the rapid preparation of quasi two-dimensional nanopatterned functional substrates, e.g., for the template-controlled growth of ZnO nanostructures [1].

Microlithography and resist technology information at your fingertips via SciFinder

NASA Astrophysics Data System (ADS)

Konuk, Rengin; Macko, John R.; Staggenborg, Lisa

1997-07-01

Finding and retrieving the information you need about microlithography and resist technology in a timely fashion can make or break your competitive edge in today's business environment. Chemical Abstracts Service (CAS) provides the most complete and comprehensive database of the chemical literature in the CAplus, REGISTRY, and CASREACT files including 13 million document references, 15 million substance records and over 1.2 million reactions. This includes comprehensive coverage of positive and negative resist formulations and processing, photoacid generation, silylation, single and multilayer resist systems, photomasks, dry and wet etching, photolithography, electron-beam, ion-beam and x-ray lithography technologies and process control, optical tools, exposure systems, radiation sources and steppers. Journal articles, conference proceedings and patents related to microlithography and resist technology are analyzed and indexed by scientific information analysts with strong technical background in these areas. The full CAS database, which is updated weekly with new information, is now available at your desktop, via a convenient, user-friendly tool called 'SciFinder.' Author, subject and chemical substance searching is simplified by SciFinder's smart search features. Chemical substances can be searched by chemical structure, chemical name, CAS registry number or molecular formula. Drawing chemical structures in SciFinder is easy and does not require compliance with CA conventions. Built-in intelligence of SciFinder enables users to retrieve substances with multiple components, tautomeric forms and salts.

Advances in solar and cosmic X-ray astronomy - A survey of experimental techniques and observational results.

NASA Technical Reports Server (NTRS)

Hoover, R. B.; Thomas, R. J.; Underwood, J. H.

1972-01-01

The current status of X-ray astronomy is surveyed by reviewing observational results and theoretical conclusions gained within the past two years in areas dealing with the quiet-sun, slowly-varying, and burst components of solar X-radiation and with the features of cosmic X-ray sources. Thermal and nonthermal processes responsible for a wide variety of X-ray emission mechanisms in nature are explained, and characteristics of X radiation from specific solar structures are described. Attention is given to the effects of interstellar and intergalactic matter on cosmic X-rays; the properties of galactic and extragalactic X-ray sources; and the specifications of such instruments as gas-filled ionization detectors, proportional counters, Geiger counters, scintillation detectors, photoelectric detectors, polarimeters, collimators, spectrometers, and imaging systems.

X-ray astronomy from Uhuru to HEAO-1

NASA Technical Reports Server (NTRS)

Clark, G. W.

1981-01-01

The nature of galactic and extragalactic X-ray sources is investigated using observations made with nine satellites and several rockets. The question of X-ray pulsars being neutron stars or white dwarfs is considered, as is the nature of Population II and low-luminosity X-ray stars, the diffuse X-ray emission from clusters of galaxies, the unidentified high-galactic-latitude (UHGL) sources, and the unresolved soft X-ray background. The types of sources examined include binary pulsars, Population II X-ray stars (both nonbursters and bursters) inside and outside globular clusters, coronal X-ray emitters, and active galactic nuclei. It is concluded that: (1) X-ray pulsars are strongly magnetized neutron stars formed in the evolution of massive close binaries; (2) all Population II X-ray stars are weakly magnetized or nonmagnetic neutron stars accreting from low-mass companions in close binary systems; (3) the diffuse emission from clusters is thermal bremsstrahlung of hot matter processed in stars and swept out by ram pressure exerted by the intergalactic gas; (4) most or all of the UHGL sources are active galactic nuclei; and (5) the soft X-ray background is emission from a hot component of the interstellar medium.

High power, high beam quality regenerative amplifier

DOEpatents

Hackel, L.A.; Dane, C.B.

1993-08-24

A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

High power, high beam quality regenerative amplifier

DOEpatents

Hackel, Lloyd A.; Dane, Clifford B.

1993-01-01

A regenerative laser amplifier system generates high peak power and high energy per pulse output beams enabling generation of X-rays used in X-ray lithography for manufacturing integrated circuits. The laser amplifier includes a ring shaped optical path with a limited number of components including a polarizer, a passive 90 degree phase rotator, a plurality of mirrors, a relay telescope, and a gain medium, the components being placed close to the image plane of the relay telescope to reduce diffraction or phase perturbations in order to limit high peak intensity spiking. In the ring, the beam makes two passes through the gain medium for each transit of the optical path to increase the amplifier gain to loss ratio. A beam input into the ring makes two passes around the ring, is diverted into an SBS phase conjugator and proceeds out of the SBS phase conjugator back through the ring in an equal but opposite direction for two passes, further reducing phase perturbations. A master oscillator inputs the beam through an isolation cell (Faraday or Pockels) which transmits the beam into the ring without polarization rotation. The isolation cell rotates polarization only in beams proceeding out of the ring to direct the beams out of the amplifier. The diffraction limited quality of the input beam is preserved in the amplifier so that a high power output beam having nearly the same diffraction limited quality is produced.

42 CFR 37.2 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-10-01

... radiography (CR) is the term for digital X-ray image acquisition systems that detect X-ray signals using a... stimulating laser beam to convert the latent radiographic image to electronic signals which are then processed... image acquisition systems in which the X-ray signals received by the image detector are converted nearly...

X-ray emission from high temperature plasmas

NASA Technical Reports Server (NTRS)

Harries, W. L.

1976-01-01

The physical processes occurring in plasma focus devices were studied. These devices produce dense high temperature plasmas, which emit X rays of hundreds of KeV energy and one to ten billion neutrons per pulse. The processes in the devices seem related to solar flare phenomena, and would also be of interest for controlled thermonuclear fusion applications. The high intensity, short duration bursts of X rays and neutrons could also possibly be used for pumping nuclear lasers.

In Situ X-Ray Studies of Crystallization Kinetics and Ordering in Functional Organic and Hybrid Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Bin; Keum, Jong K.; Geohegan, David B.

In-Situ and time-resolved X-ray scattering and diffraction is dedicated to yielding the change of structural information as the materials are processed or grown in a controlled environment. In this chapter, we introduce the use of in situ and time-resolved X-ray techniques to understand molecular packing, crystal orientation, and phase transformation during the synthesis and processing of functional organic semiconductors, organic nanowires, and hybrid perovskite materials.

Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics

DTIC Science & Technology

2007-02-28

process limits the compatibility with further lithography steps. Using silicon as the MEMS structural material, most of the integration processes...structures are defined by lithography and deep reactive ion etching. A layer of gasket oxide is deposited as the sacrificial material between the...When the Bragg condition for constructive interference is obtained, a diffraction peak is produced and the relative peak height is proportional to

All-optical lithography process for contacting nanometer precision donor devices

NASA Astrophysics Data System (ADS)

Ward, D. R.; Marshall, M. T.; Campbell, D. M.; Lu, T. M.; Koepke, J. C.; Scrymgeour, D. A.; Bussmann, E.; Misra, S.

2017-11-01

We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

All-optical lithography process for contacting nanometer precision donor devices

DOE PAGES

Ward, Daniel Robert; Marshall, Michael Thomas; Campbell, DeAnna Marie; ...

2017-11-06

In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

All-optical lithography process for contacting nanometer precision donor devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ward, Daniel Robert; Marshall, Michael Thomas; Campbell, DeAnna Marie

In this article, we describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

Implementation and benefits of advanced process control for lithography CD and overlay

NASA Astrophysics Data System (ADS)

Zavyalova, Lena; Fu, Chong-Cheng; Seligman, Gary S.; Tapp, Perry A.; Pol, Victor

2003-05-01

Due to the rapidly reduced imaging process windows and increasingly stingent device overlay requirements, sub-130 nm lithography processes are more severely impacted than ever by systamic fault. Limits on critical dimensions (CD) and overlay capability further challenge the operational effectiveness of a mix-and-match environment using multiple lithography tools, as such mode additionally consumes the available error budgets. Therefore, a focus on advanced process control (APC) methodologies is key to gaining control in the lithographic modules for critical device levels, which in turn translates to accelerated yield learning, achieving time-to-market lead, and ultimately a higher return on investment. This paper describes the implementation and unique challenges of a closed-loop CD and overlay control solution in high voume manufacturing of leading edge devices. A particular emphasis has been placed on developing a flexible APC application capable of managing a wide range of control aspects such as process and tool drifts, single and multiple lot excursions, referential overlay control, 'special lot' handling, advanced model hierarchy, and automatic model seeding. Specific integration cases, including the multiple-reticle complementary phase shift lithography process, are discussed. A continuous improvement in the overlay and CD Cpk performance as well as the rework rate has been observed through the implementation of this system, and the results are studied.

A time dependent approach to model X-ray and γ-ray light curves of Mrk 421 observed during the flare in February 2010

NASA Astrophysics Data System (ADS)

Singh, K. K.; Sahayanathan, S.; Sinha, A.; Bhatt, N.; Tickoo, A. K.; Yadav, K. K.; Rannot, R. C.; Chandra, P.; Venugopal, K.; Marandi, P.; Kumar, N.; Goyal, H. C.; Goyal, A.; Agarwal, N. K.; Kothari, M.; Chanchalani, K.; Dhar, V. K.; Chouhan, N.; Bhat, C. K.; Koul, M. K.; Koul, R.

2017-07-01

Strong X-ray and γ-ray flares have been detected in February 2010 from the high synchrotron peaked blazar Mrk 421 (z = 0.031). With the motivation of understanding the physics involved in this flaring activity, we study the variability of the source in X-ray and γ-ray energy bands during the period February 10-23, 2010 (MJD 55237-55250). We use near simultaneous X-ray data collected by MAXI, Swift-XRT and γ-ray data collected by Fermi-LAT and TACTIC along with the optical V-band observations by SPOLat Steward Observatory. We observe that the variation in the one day averaged flux from the source during the flare is characterized by fast rise and slow decay. Besides, the TeV γ-ray flux shows a strong correlation with the X-ray flux, suggesting the former to be an outcome of synchrotron self Compton emission process. To model the observed X-ray and γ-ray light curves, we numerically solve the kinetic equation describing the evolution of particle distribution in the emission region. The injection of particle distribution into the emission region, from the putative acceleration region, is assumed to be a time dependent power law. The synchrotron and synchrotron self Compton emission from the evolving particle distribution in the emission region are used to reproduce the X-ray and γ-ray flares successfully. Our study suggests that the flaring activity of Mrk 421 can be an outcome of an efficient acceleration process associated with the increase in underlying non-thermal particle distribution.

Novel EUV photoresist for sub-7nm node (Conference Presentation)

NASA Astrophysics Data System (ADS)

Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

2017-04-01

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

A glimpse of structural biology through X-ray crystallography.

PubMed

Shi, Yigong

2014-11-20

Since determination of the myoglobin structure in 1957, X-ray crystallography, as the anchoring tool of structural biology, has played an instrumental role in deciphering the secrets of life. Knowledge gained through X-ray crystallography has fundamentally advanced our views on cellular processes and greatly facilitated development of modern medicine. In this brief narrative, I describe my personal understanding of the evolution of structural biology through X-ray crystallography-using as examples mechanistic understanding of protein kinases and integral membrane proteins-and comment on the impact of technological development and outlook of X-ray crystallography.

[Development of X-ray excited fluorescence spectrometer].

PubMed

Ni, Chen; Gu, Mu; Di, Wang; Cao, Dun-Hua; Liu, Xiao-Lin; Huang, Shi-Ming

2009-08-01

An X-ray excited fluorescence spectrometer was developed with an X-ray tube and a spectrometer. The X-ray tube, spectrometer, autocontrol method and data processing selected were roundly evaluated. The wavelength and detecting efficiency of the apparatus were calibrated with the mercury and tungsten bromine standard lamps, and the X-ray excited emission spectra of BaF2, Cs I (Tl) crystals were measured. The results indicate that the apparatus has advantages of good wavelength resolution, high stability, easy to operation and good radioprotection. It is a wery effective tool for exploration of new scintillation materials.

Advanced refractory-metal and process technology for the fabrication of x-ray masks

NASA Astrophysics Data System (ADS)

Brooks, Cameron J.; Racette, Kenneth C.; Lercel, Michael J.; Powers, Lynn A.; Benoit, Douglas E.

1999-06-01

This paper provides an in-depth report of the advanced materials and process technology being developed for x-ray mask manufacturing at IBM. Masks using diamond membranes as replacement for silicon carbide are currently being fabricated. Alternate tantalum-based absorbers, such as tantalum boron, which offer improved etch resolution and critical dimension control, as well as higher x-ray absorption, are also being investigated. In addition to the absorber studies, the development of conductive chromium- based hard-mask films to replace the current silicon oxynitride layer is being explored. The progress of this advanced-materials work, which includes significant enhancements to x-ray mask image-placement performance, will be outlined.

What can be Learned from X-ray Spectroscopy Concerning Hot Gas in Local Bubble and Charge Exchange Processes?

NASA Technical Reports Server (NTRS)

Snowden, Steve

2007-01-01

What can be learned from x-ray spectroscopy in observing hot gas in local bubble and charge exchange processes depends on spectral resolution, instrumental grasp, instrumental energy band, signal-to-nose, field of view, angular resolution and observatory location. Early attempts at x-ray spectroscopy include ROSAT; more recently, astronomers have used diffuse x-ray spectrometers, XMM Newton, sounding rocket calorimeters, and Suzaku. Future observations are expected with calorimeters on the Spectrum Roentgen Gamma mission, and the Solar Wind Charge Exchange (SWCX). The Geospheric SWCX may provide remote sensing of the solar wind and magnetosheath and remote observations of solar CMEs moving outward from the sun.

Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samedov, Victor V.

In this work, theoretical consideration of the processes in planar High Purity Ge (HPGe) detectors for low energy X-rays using the random stochastic processes formalism was carried out. Using the random stochastic processes formalism, the generating function of the processes of X-rays registration in a planar HPGe detector was derived. The power serial expansions of the detector amplitude and the variance in terms of the inverse bias voltage were derived. The coefficients of these expansions allow determining the Fano factor, electron mobility lifetime product, nonuniformity of the trap density, and other characteristics of the semiconductor material. (authors)

A Highly Sensitive X-ray Imaging Modality for Hepatocellular Carcinoma Detection in Vitro

PubMed Central

Rand, Danielle; Walsh, Edward G.; Derdak, Zoltan; Wands, Jack R.; Rose-Petruck, Christoph

2015-01-01

Innovations that improve sensitivity and reduce cost are of paramount importance in diagnostic imaging. The novel x-ray imaging modality called Spatial Frequency Heterodyne Imaging (SFHI) is based on a linear arrangement of x-ray source, tissue, and x-ray detector, much like that of a conventional x-ray imaging apparatus. However, SFHI rests on a complete paradigm reversal compared to conventional x-ray absorption-based radiology: while scattered x-rays are carefully rejected in absorption-based x-ray radiology to enhance the image contrast, SFHI forms images exclusively from x-rays scattered by the tissue. In this study we use numerical processing to produce x-ray scatter images of Hepatocellular Carcinoma (HCC) labeled with a nanoparticle contrast agent. We subsequently compare the sensitivity of SFHI in this application to that of both conventional x-ray imaging and Magnetic Resonance Imaging (MRI). Although SFHI is still in the early stages of its development, our results show that the sensitivity of SFHI is an order of magnitude greater than that of absorption-based x-ray imaging and approximately equal to that of MRI. As x-ray imaging modalities typically have lower installation and service costs compared to MRI, SFHI could become a cost effective alternative to MRI, particularly in areas of the world with inadequate availability of MRI facilities. PMID:25559398

A highly sensitive x-ray imaging modality for hepatocellular carcinoma detection in vitro

DOE PAGES

Rand, Danielle; Walsh, Edward G.; Derdak, Zoltan; ...

2015-01-05

Innovations that improve sensitivity and reduce cost are of paramount importance in diagnostic imaging. The novel x-ray imaging modality called Spatial Frequency Heterodyne Imaging (SFHI) is based on a linear arrangement of x-ray source, tissue, and x-ray detector, much like that of a conventional x-ray imaging apparatus. However, SFHI rests on a complete paradigm reversal compared to conventional x-ray absorption-based radiology: while scattered x-rays are carefully rejected in absorption-based x-ray radiology to enhance the image contrast, SFHI forms images exclusively from x-rays scattered by the tissue. Here in this study we use numerical processing to produce x-ray scatter images ofmore » Hepatocellular Carcinoma (HCC) labeled with a nanoparticle contrast agent. We subsequently compare the sensitivity of SFHI in this application to that of both conventional x-ray imaging and Magnetic Resonance Imaging (MRI). Although SFHI is still in the early stages of its development, our results show that the sensitivity of SFHI is an order of magnitude greater than that of absorption-based x-ray imaging and approximately equal to that of MRI. Lastly, as x-ray imaging modalities typically have lower installation and service costs compared to MRI, SFHI could become a cost effective alternative to MRI, particularly in areas of the world with inadequate availability of MRI facilities.« less

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

Adsorption and electron-induced polymerization of methyl methacrylate on Ru(101xAF0)

NASA Astrophysics Data System (ADS)

Hedhili, M. N.; Yakshinskiy, B. V.; Wasielewski, R.; Ciszewski, A.; Madey, T. E.

2008-05-01

The adsorption and electron irradiation of methyl methacrylate (MMA) on a Ru(101¯0) surface have been studied using x-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD), and low energy ion scattering. TPD analysis indicates that a monolayer of MMA chemisorbs and dissociates on the Ru(101¯0) surface. The reaction products observed upon heating include H2, CO, CO2, and a small amount of MMA. Physisorbed multilayers of MMA desorb at temperatures around 170K. Electron irradiation of physisorbed MMA at 140K leads to a modification of the MMA film: The XPS spectra show an increase in thermal stability of the film with retention of the MMA structure, and indicate that electron irradiation induces polymerization. An increase in the electron bombardment fluence induces a degradation of the formed polymerized species and leads to the accumulation of carbon on the Ru surface. These results are relevant to the accumulation of carbon on surfaces of Ru films that serve as capping layers on Mo /Si multilayer mirrors used in extreme ultraviolet lithography.

A versatile soft X-ray transmission system for time resolved in situ microscopy with chemical contrast.

PubMed

Forsberg, J; Englund, C-J; Duda, L-C

2009-08-01

We present the design and operation of a versatile soft X-ray transmission system for time resolved in situ microscopy with chemical contrast. The utility of the setup is demonstrated by results from following a corrosion process of iron in saline environment, subjected to a controlled humid atmosphere. The system includes a transmission flow-cell reactor that allows for in situ microscopic probing with soft X-rays. We employ a full field technique by using a nearly collimated X-ray beam that produces an unmagnified projection of the transmitted soft X-rays (below 1.1 keV) which is magnified and recorded by an optical CCD camera. Time lapse series with chemical contrast allow us to follow and interpret the chemical processes in detail. The obtainable lateral resolution is a few mum, sufficient to detect filiform corrosion on iron.

Finding the right way: DFM versus area efficiency for 65 nm gate layer lithography

NASA Astrophysics Data System (ADS)

Sarma, Chandra S.; Scheer, Steven; Herold, Klaus; Fonseca, Carlos; Thomas, Alan; Schroeder, Uwe P.

2006-03-01

DFM (Design for Manufacturing) has become a buzzword for lithography since the 90nm node. Implementing DFM intelligently can boost yield rates and reliability in semiconductor manufacturing significantly. However, any restriction on the design space will always result in an area loss, thus diminishing the effective shrink factor for a given technology. For a lithographer, the key task is to develop a manufacturable process, while not sacrificing too much area. We have developed a high performing lithography process for attenuated gate level lithography that is based on aggressive illumination and a newly optimized SRAF placement schemes. In this paper we present our methodology and results for this optimization, using an anchored simulation model. The wafer results largely confirm the predictions of the simulations. The use of aggressive SRAF (Sub Resolution Assist Features) strategy leads to reduction of forbidden pitch regions without any SRAF printing. The data show that our OPC is capable of correcting the PC tip to tip distance without bridging between the tips in dense SRAM cells. SRAF strategy for various 2D cases has also been verified on wafer. We have shown that aggressive illumination schemes yielding a high performing lithography process can be employed without sacrificing area. By carefully choosing processing conditions, we were able develop a process that has very little restrictions for design. In our approach, the remaining issues can be addressed by DFM, partly in data prep procedures, which are largely area neutral and transparent to the designers. Hence, we have shown successfully, that DFM and effective technology shrinks are not mutually exclusive.

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Fabrication of 200 nanometer period centimeter area hard x-ray absorption gratings by multilayer deposition

PubMed Central

Lynch, S K; Liu, C; Morgan, N Y; Xiao, X; Gomella, A A; Mazilu, D; Bennett, E E; Assoufid, L; de Carlo, F; Wen, H

2012-01-01

We describe the design and fabrication trials of x-ray absorption gratings of 200 nm period and up to 100:1 depth-to-period ratios for full-field hard x-ray imaging applications. Hard x-ray phase-contrast imaging relies on gratings of ultra-small periods and sufficient depth to achieve high sensitivity. Current grating designs utilize lithographic processes to produce periodic vertical structures, where grating periods below 2.0 μm are difficult due to the extreme aspect ratios of the structures. In our design, multiple bilayers of x-ray transparent and opaque materials are deposited on a staircase substrate, and mostly on the floor surfaces of the steps only. When illuminated by an x-ray beam horizontally, the multilayer stack on each step functions as a micro-grating whose grating period is the thickness of a bilayer. The array of micro-gratings over the length of the staircase works as a single grating over a large area when continuity conditions are met. Since the layers can be nanometers thick and many microns wide, this design allows sub-micron grating periods and sufficient grating depth to modulate hard x-rays. We present the details of the fabrication process and diffraction profiles and contact radiography images showing successful intensity modulation of a 25 keV x-ray beam. PMID:23066175

Deciphering the X-ray Emission of the Nearest Herbig Ae Star

NASA Technical Reports Server (NTRS)

Skinner, Stephen L.

2004-01-01

In this research program, we obtained and analyzed an X-ray observation of the young nearby intermediate mass pre-main sequence star HD 104237 using the XMM-Newton space-based observatory. The observation was obtained on 17 Feb. 2002. This observation yielded high-quality X-ray images, spectra, and timing data which provided valuable information on the physical processes responsible for the X-ray emission. This star is a member of the group of so-called Herbig Ae/Be stars, which are young intermediate mass (approx. 2 - 4 solar masses) pre-main sequence (PMS) stars a few million years old that have not yet begun core hydrogen burning. The objective of the XMM-Newton observation was to obtain higher quality data than previously available in order to constrain possible X-ray emission mechanisms. The origin of the X-ray emission from Herbig Ae/Be stars is not yet known. These intermediate mass PMS stars lie on radiative tracks and are not expected to emit X-rays via solar-like magnetic processes, nor are their winds powerful enough to produce X-rays by radiative wind shocks as in more massive O-type stars. The emission could originate in unseen low-mass companions, or it may be intrinsic to the Herbig stars themselves if they still have primordial magnetic fields or can sustain magnetic activity via a nonsolar dynamo.

Experimental Investigation of Material Flows Within FSWs Using 3D Tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charles R. Tolle; Timothy A. White; Karen S. Miller

2008-06-01

There exists significant prior work using tracers or pre-placed hardened markers within friction stir welding (FSWing) to experimentally explore material flow within the FSW process. Our experiments replaced markers with a thin sheet of copper foil placed between the 6061 aluminum lap and butt joints that were then welded. The absorption characteristics of x-rays for copper and aluminum are significantly different allowing for non-destructive evaluation (NDE) methods such as x-ray computed tomography (CT) to be used to demonstrate the material movement within the weldment on a much larger scale than previously shown. 3D CT reconstruction of the copper components ofmore » the weldment allows for a unique view into the final turbulent state of the welding process as process parameters are varied. The x-ray CT data of a section of the weld region was collected using a cone-beam x-ray imaging system developed at the INL. Six-hundred projections were collected over 360-degrees using a 160-kVp Bremsstrahlung x-ray generator (25-micrometer focal spot) and amorphoussilicon x-ray detector. The region of the object that was imaged was about 3cm tall and 1.5cm x 1cm in cross section, and was imaged at a magnification of about 3.6x. The data were reconstructed on a 0.5x0.5x0.5 mm3 voxel grid. After reconstruction, the aluminum and copper could be easily discriminated using a gray level threshold allowing visualization of the copper components. Fractal analysis of the tomographic reconstructed material topology is investigated as a means to quantify macro level material flow based on process parameters. The results of multi-pass FSWs show increased refinement of the copper trace material. Implications of these techniques for quantifying process flow are discussed.« less

Development of Compton X-ray spectrometer for high energy resolution single-shot high-flux hard X-ray spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, Sadaoki, E-mail: kojima-s@ile.osaka-u.ac.jp, E-mail: sfujioka@ile.osaka-u.ac.jp; Ikenouchi, Takahito; Arikawa, Yasunobu

Hard X-ray spectroscopy is an essential diagnostics used to understand physical processes that take place in high energy density plasmas produced by intense laser-plasma interactions. A bundle of hard X-ray detectors, of which the responses have different energy thresholds, is used as a conventional single-shot spectrometer for high-flux (>10{sup 13} photons/shot) hard X-rays. However, high energy resolution (Δhv/hv < 0.1) is not achievable with a differential energy threshold (DET) X-ray spectrometer because its energy resolution is limited by energy differences between the response thresholds. Experimental demonstration of a Compton X-ray spectrometer has already been performed for obtaining higher energy resolutionmore » than that of DET spectrometers. In this paper, we describe design details of the Compton X-ray spectrometer, especially dependence of energy resolution and absolute response on photon-electron converter design and its background reduction scheme, and also its application to the laser-plasma interaction experiment. The developed spectrometer was used for spectroscopy of bremsstrahlung X-rays generated by intense laser-plasma interactions using a 200 μm thickness SiO{sub 2} converter. The X-ray spectrum obtained with the Compton X-ray spectrometer is consistent with that obtained with a DET X-ray spectrometer, furthermore higher certainly of a spectral intensity is obtained with the Compton X-ray spectrometer than that with the DET X-ray spectrometer in the photon energy range above 5 MeV.« less

Ion beam lithography system

DOEpatents

Leung, Ka-Ngo

2005-08-02

A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.

Optical force stamping lithography

PubMed Central

Nedev, Spas; Urban, Alexander S.; Lutich, Andrey A.; Feldmann, Jochen

2013-01-01

Here we introduce a new paradigm of far-field optical lithography, optical force stamping lithography. The approach employs optical forces exerted by a spatially modulated light field on colloidal nanoparticles to rapidly stamp large arbitrary patterns comprised of single nanoparticles onto a substrate with a single-nanoparticle positioning accuracy well beyond the diffraction limit. Because the process is all-optical, the stamping pattern can be changed almost instantly and there is no constraint on the type of nanoparticle or substrates used. PMID:21992538

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

NASA Astrophysics Data System (ADS)

Cantu, Pietro; Baldi, Livio; Piacentini, Paolo; Sytsma, Joost; Le Gratiet, Bertrand; Gaugiran, Stéphanie; Wong, Patrick; Miyashita, Hiroyuki; Atzei, Luisa R.; Buch, Xavier; Verkleij, Dick; Toublan, Olivier; Perez-Murano, Francesco; Mecerreyes, David

2010-04-01

In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain; includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

[Development of the automatic dental X-ray film processor].

PubMed

Bai, J; Chen, H

1999-07-01

This paper introduces a multiple-point detecting technique of the density of dental X-ray films. With the infrared ray multiple-point detecting technique, a single-chip microcomputer control system is used to analyze the effectiveness of the film-developing in real time in order to achieve a good image. Based on the new technology, We designed the intelligent automatic dental X-ray film processing.

Soft X-Ray Emissions from Planets and Moons

NASA Technical Reports Server (NTRS)

Bhardwaj, A.; Gladstone, G. R.; Elsner, R. F.; Waite, J. H., Jr.; Grodent, D.; Cravens, T. E.; Howell, R. R.; Metzger, A. E.; Ostgaard, N.; Maurellis, A.;

Deterministic Computer-Controlled Polishing Process for High-Energy X-Ray Optics

NASA Technical Reports Server (NTRS)

Khan, Gufran S.; Gubarev, Mikhail; Speegle, Chet; Ramsey, Brian

2010-01-01

A deterministic computer-controlled polishing process for large X-ray mirror mandrels is presented. Using tool s influence function and material removal rate extracted from polishing experiments, design considerations of polishing laps and optimized operating parameters are discussed

Observations of breakup processes of liquid jets using real-time X-ray radiography

NASA Technical Reports Server (NTRS)

Char, J. M.; Kuo, K. K.; Hsieh, K. C.

1988-01-01

To unravel the liquid-jet breakup process in the nondilute region, a newly developed system of real-time X-ray radiography, an advanced digital image processor, and a high-speed video camera were used. Based upon recorded X-ray images, the inner structure of a liquid jet during breakup was observed. The jet divergence angle, jet breakup length, and fraction distributions along the axial and transverse directions of the liquid jets were determined in the near-injector region. Both wall- and free-jet tests were conducted to study the effect of wall friction on the jet breakup process.

Spectra of clinical CT scanners using a portable Compton spectrometer.

PubMed

Duisterwinkel, H A; van Abbema, J K; van Goethem, M J; Kawachimaru, R; Paganini, L; van der Graaf, E R; Brandenburg, S

2015-04-01

Spectral information of the output of x-ray tubes in (dual source) computer tomography (CT) scanners can be used to improve the conversion of CT numbers to proton stopping power and can be used to advantage in CT scanner quality assurance. The purpose of this study is to design, validate, and apply a compact portable Compton spectrometer that was constructed to accurately measure x-ray spectra of CT scanners. In the design of the Compton spectrometer, the shielding materials were carefully chosen and positioned to reduce background by x-ray fluorescence from the materials used. The spectrum of Compton scattered x-rays alters from the original source spectrum due to various physical processes. Reconstruction of the original x-ray spectrum from the Compton scattered spectrum is based on Monte Carlo simulations of the processes involved. This reconstruction is validated by comparing directly and indirectly measured spectra of a mobile x-ray tube. The Compton spectrometer is assessed in a clinical setting by measuring x-ray spectra at various tube voltages of three different medical CT scanner x-ray tubes. The directly and indirectly measured spectra are in good agreement (their ratio being 0.99) thereby validating the reconstruction method. The measured spectra of the medical CT scanners are consistent with theoretical spectra and spectra obtained from the x-ray tube manufacturer. A Compton spectrometer has been successfully designed, constructed, validated, and applied in the measurement of x-ray spectra of CT scanners. These measurements show that our compact Compton spectrometer can be rapidly set-up using the alignment lasers of the CT scanner, thereby enabling its use in commissioning, troubleshooting, and, e.g., annual performance check-ups of CT scanners.

Clumpy wind accretion in supergiant neutron star high mass X-ray binaries

NASA Astrophysics Data System (ADS)

Bozzo, E.; Oskinova, L.; Feldmeier, A.; Falanga, M.

2016-05-01

The accretion of the stellar wind material by a compact object represents the main mechanism powering the X-ray emission in classical supergiant high mass X-ray binaries and supergiant fast X-ray transients. In this work we present the first attempt to simulate the accretion process of a fast and dense massive star wind onto a neutron star, taking into account the effects of the centrifugal and magnetic inhibition of accretion ("gating") due to the spin and magnetic field of the compact object. We made use of a radiative hydrodynamical code to model the nonstationary radiatively driven wind of an O-B supergiant star and then place a neutron star characterized by a fixed magnetic field and spin period at a certain distance from the massive companion. Our calculations follow, as a function of time (on a total timescale of several hours), the transitions of the system through all different accretion regimes that are triggered by the intrinsic variations in the density and velocity of the nonstationary wind. The X-ray luminosity released by the system is computed at each time step by taking into account the relevant physical processes occurring in the different accretion regimes. Synthetic lightcurves are derived and qualitatively compared with those observed from classical supergiant high mass X-ray binaries and supergiant fast X-ray transients. Although a number of simplifications are assumed in these calculations, we show that taking into account the effects of the centrifugal and magnetic inhibition of accretion significantly reduces the average X-ray luminosity expected for any neutron star wind-fed binary. The present model calculations suggest that long spin periods and stronger magnetic fields are favored in order to reproduce the peculiar behavior of supergiant fast X-ray transients in the X-ray domain.

450mm wafer patterning with jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

A deep X-ray view of the bare AGN Ark 120. IV. XMM-Newton and NuSTAR spectra dominated by two temperature (warm, hot) Comptonization processes

NASA Astrophysics Data System (ADS)

Porquet, D.; Reeves, J. N.; Matt, G.; Marinucci, A.; Nardini, E.; Braito, V.; Lobban, A.; Ballantyne, D. R.; Boggs, S. E.; Christensen, F. E.; Dauser, T.; Farrah, D.; Garcia, J.; Hailey, C. J.; Harrison, F.; Stern, D.; Tortosa, A.; Ursini, F.; Zhang, W. W.

2018-01-01

Context. The physical characteristics of the material closest to supermassive black holes (SMBHs) are primarily studied through X-ray observations. However, the origins of the main X-ray components such as the soft X-ray excess, the Fe Kα line complex, and the hard X-ray excess are still hotly debated. This is particularly problematic for active galactic nuclei (AGN) showing a significant intrinsic absorption, either warm or neutral, which can severely distort the observed continuum. Therefore, AGN with no (or very weak) intrinsic absorption along the line of sight, so-called "bare AGN", are the best targets to directly probe matter very close to the SMBH. Aims: We perform an X-ray spectral analysis of the brightest and cleanest bare AGN known so far, Ark 120, in order to determine the process(es) at work in the vicinity of the SMBH. Methods: We present spectral analyses of data from an extensive campaign observing Ark 120 in X-rays with XMM-Newton (4 × 120 ks, 2014 March 18-24), and NuSTAR (65.5 ks, 2014 March 22). Results: During this very deep X-ray campaign, the source was caught in a high-flux state similar to the earlier 2003 XMM-Newton observation, and about twice as bright as the lower-flux observation in 2013. The spectral analysis confirms the "softer when brighter" behavior of Ark 120. The four XMM-Newton/pn spectra are characterized by the presence of a prominent soft X-ray excess and a significant Fe Kα complex. The continuum is very similar above about 3 keV, while significant variability is present for the soft X-ray excess. We find that relativistic reflection from a constant-density, flat accretion disk cannot simultaneously produce the soft excess, broad Fe Kα complex, and hard X-ray excess. Instead, Comptonization reproduces the broadband (0.3-79 keV) continuum well, together with a contribution from a mildly relativistic disk reflection spectrum. Conclusions: During this 2014 observational campaign, the soft X-ray spectrum of Ark 120 below 0.5 keV was found to be dominated by Comptonization of seed photons from the disk by a warm (kTe 0.5 keV), optically-thick corona (τ 9). Above this energy, the X-ray spectrum becomes dominated by Comptonization from electrons in a hot optically thin corona, while the broad Fe Kα line and the mild Compton hump result from reflection off the disk at several tens of gravitational radii.

Soft-X-Ray Prefilter for Hot, Bright Objects

NASA Technical Reports Server (NTRS)

Davis, J. M.; Ortendahl, J. A.

1985-01-01

Prefilters consisting of beryllium foil supported on conductive silver mesh transmit soft x-rays but are nearly opaque to visible and infrared light. New Be/AG filters protect imaging X-ray detectors from damage by visible and longer wavelength radiation when viewing such hot, bright emitters as Sun or possibly certain industrial processes.

Low-Cost Structural Thermoelectric Materials: Processing and Consolidation

DTIC Science & Technology

2015-01-01

12 Fig. 8 Hardness from X - ray 2θ profiles for the Fe–Al–V and Ti–Ni–Sn... Hardness from X - ray 2θ profiles for the Fe–Al–V and Ti–Ni–Sn TE materials as a function of annealing temperature 3.3 Consolidated Thermoelectric...9 3. Results 10 3.1 X - ray

X-ray free electron laser: opportunities for drug discovery.

PubMed

Cheng, Robert K Y; Abela, Rafael; Hennig, Michael

2017-11-08

Past decades have shown the impact of structural information derived from complexes of drug candidates with their protein targets to facilitate the discovery of safe and effective medicines. Despite recent developments in single particle cryo-electron microscopy, X-ray crystallography has been the main method to derive structural information. The unique properties of X-ray free electron laser (XFEL) with unmet peak brilliance and beam focus allow X-ray diffraction data recording and successful structure determination from smaller and weaker diffracting crystals shortening timelines in crystal optimization. To further capitalize on the XFEL advantage, innovations in crystal sample delivery for the X-ray experiment, data collection and processing methods are required. This development was a key contributor to serial crystallography allowing structure determination at room temperature yielding physiologically more relevant structures. Adding the time resolution provided by the femtosecond X-ray pulse will enable monitoring and capturing of dynamic processes of ligand binding and associated conformational changes with great impact to the design of candidate drug compounds. © 2017 The Author(s). Published by Portland Press Limited on behalf of the Biochemical Society.

Silicon pore optics for the international x-ray observatory

NASA Astrophysics Data System (ADS)

Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

Inter-satellites x-ray communication system

NASA Astrophysics Data System (ADS)

Mou, Huan; Li, Bao-quan

2017-02-01

An inter-satellite X-ray communication system is presented in this paper. X-ray has a strong penetrating power without almost attenuation for transmission in outer space when the energy of X-ray photons is more than 10KeV and the atmospheric pressure is lower than 10-1 Pa, so it is convincing of x-ray communication in inter-satellite communication and deep space exploration. Additionally, using X-ray photons as information carriers can be used in some communication applications that laser communication and radio frequency (RF) communication are not available, such as ionization blackout area communication. The inter-satellites X-ray communication system, including the grid modulated X-ray source, the high-sensitivity X-ray detector and the transmitting and receiving antenna, is described explicitly. As the X-ray transmitter, a vacuum-sealed miniature modulated X-ray source has been fabricated via the single-step brazing process in a vacuum furnace. Pulse modulation of X-rays, by means of controlling the voltage value of the grid electrode, is realized. Three focusing electrodes, meanwhile, are used to make the electron beam converge and finally 150μm focusing spot diameter is obtained. The X-ray detector based on silicon avalanche photodiodes (APDs) is chosen as the communication receiver on account of its high temporal resolution and non-vacuum operating environment. Furthermore, considering x-ray emission characteristic and communication distance of X-rays, the multilayer nested rotary parabolic optics is picked out as transmitting and receiving antenna. And as a new concept of the space communication, there will be more important scientific significance and application prospects, called "Next-Generation Communications".

Design and development of next-generation bottom anti-reflective coatings for 45nm process with hyper NA lithography

NASA Astrophysics Data System (ADS)

Nakajima, Makoto; Sakaguchi, Takahiro; Hashimoto, Keisuke; Sakamoto, Rikimaru; Kishioka, Takahiro; Takei, Satoshi; Enomoto, Tomoyuki; Nakajima, Yasuyuki

2006-03-01

Integrated circuit manufacturers are consistently seeking to minimize device feature dimensions in order to reduce chip size and increase integration level. Feature sizes on chips are achieved sub 65nm with the advanced 193nm microlithography process. R&D activities of 45nm process have been started so far, and 193nm lithography is used for this technology. The key parameters for this lithography process are NA of exposure tool, resolution capability of resist, and reflectivity control with bottom anti-reflective coating (BARC). In the point of etching process, single-layer resist process can't be applied because resist thickness is too thin for getting suitable aspect ratio. Therefore, it is necessary to design novel BARC system and develop hard mask materials having high etching selectivity. This system and these materials can be used for 45nm generation lithography. Nissan Chemical Industries, Ltd. and Brewer Science, Inc. have been designed and developed the advanced BARCs for the above propose. In order to satisfy our target, we have developed novel BARC and hard mask materials. We investigated the multi-layer resist process stacked 4 layers (resist / thin BARC / silicon-contained BARC (Si-ARC) / spin on carbon hard mask (SOC)) (4 layers process). 4 layers process showed the excellent lithographic performance and pattern transfer performance. In this paper, we will discuss the detail of our approach and materials for 4 layers process.

Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yunin, P. A., E-mail: yunin@ipmras.ru; Drozdov, Yu. N.; Drozdov, M. N.

2013-12-15

In this publication, we report the results of studying a multilayerd nonperiodic SiGe/Si structure by the methods of X-ray diffractometry, grazing-angle X-ray reflectometry, and secondary-ion mass spectrometry (SIMS). Special attention is paid to the processing of the component distribution profile using the SIMS method and to consideration of the most significant experimental distortions introduced by this method. A method for processing the measured composition distribution profile with subsequent consideration of the influence of matrix effects, variation in the etching rate, and remnants of ion sputtering is suggested. The results of such processing are compared with a structure model obtained uponmore » combined analysis of X-ray diffractometry and grazing-angle reflectometry data. Good agreement between the results is established. It is shown that the combined use of independent techniques makes it possible to improve the methods of secondary-ion mass spectrometry and grazing-incidence reflectometry as applied to an analysis of multilayered heteroepitaxial structures (to increase the accuracy and informativity of these methods)« less

Time-dependent nonequilibrium soft x-ray response during a spin crossover

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Veenendaal, Michel

The rapid development of high-brilliance pulsed X-ray sources with femtosecond time resolution has created a need for a better theoretical understanding of the time-dependent soft-X-ray response of dissipative many-body quantum systems. It is demonstrated how soft-X-ray spectroscopies, such as X-ray absorption and resonant inelastic X-ray scattering at transition-metal L-edges, can provide insight into intersystem crossings, such as a spin crossover. The photoinduced doublet-to-quartet spin crossover on cobalt in Fe-Co Prussian blue analogues is used as an example to demonstrate how the X-ray response is affected by the dissipative nonequilibrium dynamics. The time-dependent soft-X-ray spectra provide a wealth of information thatmore » reflect the changes in the nonequilibrium initial state via continuously changing spectral lineshapes that cannot be decomposed into initial photoexcited and final metastable spectra, strong broadenings, a collapse of clear selection rules during the intersystem crossing, strong fluctuations in the isotropic branching ratio in X-ray absorption, and crystal-field collapse/oscillations and strongly time-dependent anti-Stokes processes in RIXS.« less

Energy spectrum of multi-radiation of X-rays in a low energy Mather-type plasma focus device

NASA Astrophysics Data System (ADS)

Farzin, M. Aghamir; Reza, A. Behbahani

2014-06-01

The multi-radiation of X-rays was investigated with special attention to their energy spectrum in a Mather-type plasma focus device (operated with argon gas). The analysis is based on the effect of anomalous resistances. To study the energy spectrum, a four-channel diode X-ray spectrometer was used along with a special set of filters. The filters were suitable for detection of medium range X-rays as well as hard X-rays with energy exceeding 30 keV. The results indicate that the anomalous resistivity effect during the post pinch phase may cause multi-radiation of X-rays with a total duration of 300 ± 50 ns. The significant contribution of Cu—Kα was due to the medium range X-rays, nonetheless, hard X-rays with energies greater than 15 keV also participate in the process. The total emitted X-ray energy in the forms of Cu—Kα and Cu—Kβ was around 0.14 ± 0.02 (J/Sr) and 0.04 ± 0.01 (J/Sr), respectively. The total energy of the emitted hard X-ray (> 15 keV) was around 0.12 ± 0.02 (J/Sr).

Biocompatibility of hydroxyapatite scaffolds processed by lithography-based additive manufacturing.

PubMed

Tesavibul, Passakorn; Chantaweroad, Surapol; Laohaprapanon, Apinya; Channasanon, Somruethai; Uppanan, Paweena; Tanodekaew, Siriporn; Chalermkarnnon, Prasert; Sitthiseripratip, Kriskrai

2015-01-01

The fabrication of hydroxyapatite scaffolds for bone tissue engineering applications by using lithography-based additive manufacturing techniques has been introduced due to the abilities to control porous structures with suitable resolutions. In this research, the use of hydroxyapatite cellular structures, which are processed by lithography-based additive manufacturing machine, as a bone tissue engineering scaffold was investigated. The utilization of digital light processing system for additive manufacturing machine in laboratory scale was performed in order to fabricate the hydroxyapatite scaffold, of which biocompatibilities were eventually evaluated by direct contact and cell-culturing tests. In addition, the density and compressive strength of the scaffolds were also characterized. The results show that the hydroxyapatite scaffold at 77% of porosity with 91% of theoretical density and 0.36 MPa of the compressive strength are able to be processed. In comparison with a conventionally sintered hydroxyapatite, the scaffold did not present any cytotoxic signs while the viability of cells at 95.1% was reported. After 14 days of cell-culturing tests, the scaffold was able to be attached by pre-osteoblasts (MC3T3-E1) leading to cell proliferation and differentiation. The hydroxyapatite scaffold for bone tissue engineering was able to be processed by the lithography-based additive manufacturing machine while the biocompatibilities were also confirmed.

Electron and fluorescence spectra of a water molecule irradiated by an x-ray free-electron laser pulse

NASA Astrophysics Data System (ADS)

Schäfer, Julia M.; Inhester, Ludger; Son, Sang-Kil; Fink, Reinhold F.; Santra, Robin

2018-05-01

With the highly intense x-ray light generated by x-ray free-electron lasers (XFELs), molecular samples can be ionized many times in a single pulse. Here we report on a computational study of molecular spectroscopy at the high x-ray intensity provided by XFELs. Calculated photoelectron, Auger electron, and x-ray fluorescence spectra are presented for a single water molecule that reaches many electronic hole configurations through repeated ionization steps. The rich details shown in the spectra depend on the x-ray pulse parameters in a nonintuitive way. We discuss how the observed trends can be explained by the competition of microscopic electronic transition processes. A detailed comparison between spectra calculated within the independent-atom model and within the molecular-orbital framework highlights the chemical sensitivity of the spectral lines of multiple-hole configurations. Our results demonstrate how x-ray multiphoton ionization-related effects such as charge-rearrangement-enhanced x-ray ionization of molecules and frustrated absorption manifest themselves in the electron and fluorescence spectra.

Spectral Properties, Generation Order Parameters, and Luminosities for Spin-powered X-Ray Pulsars

NASA Astrophysics Data System (ADS)

Wang, Wei; Zhao, Yongheng

2004-02-01

We show the spectral properties of 15 spin-powered X-ray pulsars, and the correlation between the average power-law photon index and spin-down rate. Generation order parameters (GOPs) based on polar cap models are introduced to characterize the X-ray pulsars. We calculate three definitions of generation order parameters arising from the different effects of magnetic and electric fields on photon absorption during cascade processes, and study the relations between the GOPs and spectral properties of X-ray pulsars. There exists a possible correlation between the photon index and GOP in our pulsar sample. Furthermore, we present a method stemming from the concept of GOPs to estimate the nonthermal X-ray luminosity for spin-powered pulsars. Then X-ray luminosity is calculated in the context of our polar cap accelerator model, which is consistent with most observed X-ray pulsar data. The ratio between the X-ray luminosity estimated by our method and the pulsar's spin-down power is consistent with the LX~10-3Lsd feature.

Tomographic image reconstruction using x-ray phase information

NASA Astrophysics Data System (ADS)

Momose, Atsushi; Takeda, Tohoru; Itai, Yuji; Hirano, Keiichi

1996-04-01

We have been developing phase-contrast x-ray computed tomography (CT) to make possible the observation of biological soft tissues without contrast enhancement. Phase-contrast x-ray CT requires for its input data the x-ray phase-shift distributions or phase-mapping images caused by an object. These were measured with newly developed fringe-scanning x-ray interferometry. Phase-mapping images at different projection directions were obtained by rotating the object in an x-ray interferometer, and were processed with a standard CT algorithm. A phase-contrast x-ray CT image of a nonstained cancerous tissue was obtained using 17.7 keV synchrotron x rays with 12 micrometer voxel size, although the size of the observation area was at most 5 mm. The cancerous lesions were readily distinguishable from normal tissues. Moreover, fine structures corresponding to cancerous degeneration and fibrous tissues were clearly depicted. It is estimated that the present system is sensitive down to a density deviation of 4 mg/cm3.

Coherent Multidimensional Core Spectroscopy of Molecules with Multiple X-ray pulses

NASA Astrophysics Data System (ADS)

Mukamel, Shaul

2017-04-01

Multidimensional spectroscopy uses sequences of optical pulses to study dynamical processes in complex molecules through correlation plots involving several time delay periods. Extensions of these techniques to the x-ray regime will be discussed. Ultrafast nonlinear x-ray spectroscopy is made possible by newly developed free electron laser and high harmonic generation sources. The attosecond duration of X-ray pulses and the atomic selectivity of core X-ray excitations offer a uniquely high spatial and temporal resolution. We demonstrate how stimulated Raman detection of an X-ray probe may be used to monitor the phase and dynamics of the nonequilibrium valence electronic state wavepacket created by e.g. photoexcitation, photoionization and Auger processes. Spectroscopy of multiplecore excitations provides a new window into electron correlations. Applications will be presented to long-range charge transfer in proteins and to excitation energy transfer in porphyrin arrays. Conical intersections (CoIn) dominate the pathways and outcomes of virtually all photophysical and photochemical molecular processes. Despite extensive experimental and theoretical effort CoIns have not been directly observed yet and the experimental evidence is being inferred from fast reaction rates and some vibrational signatures. Novel ultrafast X ray probes for these processes will be presented. Short X-ray pulses can directly detect the passage through a CoIn with the adequate temporal and spectral sensitivity. The technique is based on a coherent Raman process that employs a composite femtosecond/attosecond X-ray pulse to directly detect the electronic coherences (rather than populations) that are generated as the system passes through the CoIn. Streaking of time-resolved photoelectron spectroscopy (TRPES) signals offers another powerful window into the joint electronic/vibrational dynamics at concial intersections. Strong coupling of molecules to the vacuum field of micro cavities can modify the potential energy surfaces thereby manipulating the photophysical and photochemical reaction pathways. The photonic vacuum state of a localized cavity mode can be strongly mixed with the molecular degrees of freedom to create hybrid field-matter states known as polaritons. Simulations of the avoided crossing of sodium iodide in a cavity which incorporate the quantized cavity field into the nuclear wave packet dynamics will be presented. Numerical results show how the branching ratio between the covalent and ionic dissociation channels can be strongly manipulated by the optical cavity.

Synthesis and characterization of LPCVD SiC films using novel precursors

NASA Astrophysics Data System (ADS)

Bhaskaran, Mahalingam

A unique low pressure chemical vapor deposition (LPCVD) process has been developed to synthesize amorphous and crystalline SiC films using environmentally benign chemicals. The interrelationships governing the process variables, compositions and select properties of the resulting films were established. Such films can be used to produce high quality mask membrane for x-ray lithography. These films can also be used in fabricating high power electrical devices, and hetrojunction devices in conjunction with silicon. Amorphous SiC films were synthesized using a single precursor, ditertiarybutylsilane, at temperatures below 850sp°C. Compositional analysis performed on these deposits revealed that, in the deposition temperature range of 625 to 750sp°C, the composition of the deposits changed progressively from slightly silicon rich (55% Si) to slightly carbon rich (51%C). Above 750sp°C, there was a rapid increase in the carbon content from the near stoichiometric value to about 75%-C at 850sp°C. The stoichiometric films exhibited high stress values of 700 ± 50 MPa. Attempts to reduce the stress values resulted in films with excess carbon content of about 60%-C. From the high frequency C-V characterization, the dielectric constant for these films was estimated to be 10.1 ± 0.5. Temperature bias stressing studies revealed a trapped charge density of 0.869× 10sp7 cIsp{-2} within the bulk. Crystalline silicon carbide films were grown on silicon substrates using dichlorosilane and acetylene as precursors, in the temperature range of 950sp°C to 1050sp°C. The carbon content in the film was found to be increasing with the deposition temperature, when the flow ratio of precursors was one. The carbon composition was also found to be sharply dependent on acetylene flow, for constant deposition temperature and pressure. Stoichiometric films were achieved for dichlorosilane to acetylene flow ratio of 4:1. X-ray diffraction studies confirmed the growth of beta-SiC with $$ orientation in all the cases. The voltage-current relationship for Si-film-metal structure showed a diode behavior with an ideality factor of 4.03 in the diffusion current dominating regime.

Rejuvenation of the Innocent Bystander: Results from a Pilot X-ray Study of Dwarf Carbon Stars

NASA Astrophysics Data System (ADS)

Mazzoni, Fernando; Montez, Rodolfo; Green, Paul

2018-01-01

We present the results of a pilot study by the Chandra X-ray Observatory of X-ray emission from dwarf Carbon (dC) stars. Carbon stars were thought to be exclusively AGB stars but main sequence dwarfs showing carbon molecular bands appear to be the dominant variety. The existence of dC stars is surprising since dwarf stars cannot intrinsically produce carbon as an AGB star can. It is hypothesized that dC stars are polluted by an evolved companion star. Evidence of past pollution can appear in X-ray emission where increased coronal activity (“spin-up”) or mass accretion via a disk can be detected. Using the Chandra X-ray Observatory we detected X-ray photons in the vicinity of all the dC stars in our a pilot sample. For each detection we characterized the X-ray emission and compared to the emission expected from potential emission scenarios. Although the process that produces the X-ray emission from dC stars is presently unclear and our pilot sample is small, our results suggest that X-ray emission might be a universal characteristic of dC stars. Further examination of the X-ray emission plus future X-ray and multiwavelength observations will help us better understand the nature of these intriguing stars.

X-ray Point Source Populations in Spiral and Elliptical Galaxies

NASA Astrophysics Data System (ADS)

Colbert, E.; Heckman, T.; Weaver, K.; Ptak, A.; Strickland, D.

2001-12-01

In the years of the Einstein and ASCA satellites, it was known that the total hard X-ray luminosity from non-AGN galaxies was fairly well correlated with the total blue luminosity. However, the origin of this hard component was not well understood. Some possibilities that were considered included X-ray binaries, extended upscattered far-infrared light via the inverse-Compton process, extended hot 107 K gas (especially in ellipitical galaxies), or even an active nucleus. Now, for the first time, we know from Chandra images that a significant amount of the total hard X-ray emission comes from individual X-ray point sources. We present here spatial and spectral analyses of Chandra data for X-ray point sources in a sample of ~40 galaxies, including both spiral galaxies (starbursts and non-starbursts) and elliptical galaxies. We shall discuss the relationship between the X-ray point source population and the properties of the host galaxies. We show that the slopes of the point-source X-ray luminosity functions are different for different host galaxy types and discuss possible reasons why. We also present detailed X-ray spectral analyses of several of the most luminous X-ray point sources (i.e., IXOs, a.k.a. ULXs), and discuss various scenarios for the origin of the X-ray point sources.

Simultaneous Monitoring of X-ray and Radio Variability in Sagittarius A*

NASA Astrophysics Data System (ADS)

Haggard, Daryl; Capellupo, Daniel M.; Choux, Nicolas; Baganoff, Frederick K.; Bower, Geoffrey C.; Cotton, William D.; Degenaar, Nathalie; Dexter, Jason; Falcke, Heino; Fragile, P. Christopher Christopher; Heinke, Craig O.; Law, Casey J.; Markoff, Sera; Neilsen, Joseph; Ponti, Gabriele; Rea, Nanda; Yusef-Zadeh, Farhad

2017-08-01

We report on joint X-ray/radio campaigns targeting Sagittarius A*, including 9 contemporaneous Chandra and VLA observations. These campaigns are the most extensive of their kind and have allowed us to test whether the black hole’s variations in different parts of the electromagnetic spectrum are due to the same physical processes. We detect significant radio variability peaking >176 minutes after the brightest X-ray flare ever detected from Sgr A*. We also identify other potentially associated X-ray and radio variability, with radio peaks appearing <80 minutes after weaker X-ray flares. These results suggest that stronger X-ray flares lead to longer time lags in the radio. However, we also test the possibility that the variability at X-ray and at radio wavelengths are not temporally correlated, and show that the radio variations occurring around the time of X-ray flaring are not significantly greater than the overall radio flux variations. We also cross-correlate data from mismatched X-ray and radio epochs and obtain comparable correlations to the matched data. Hence, we find no overall statistical evidence that X-ray flares and radio variability are correlated, underscoring a need for more simultaneous, long duration X-ray-radio monitoring of Sgr A*.

Optical Density Analysis of X-Rays Utilizing Calibration Tooling to Estimate Thickness of Parts

NASA Technical Reports Server (NTRS)

Grau, David

2012-01-01

This process is designed to estimate the thickness change of a material through data analysis of a digitized version of an x-ray (or a digital x-ray) containing the material (with the thickness in question) and various tooling. Using this process, it is possible to estimate a material's thickness change in a region of the material or part that is thinner than the rest of the reference thickness. However, that same principle process can be used to determine the thickness change of material using a thinner region to determine thickening, or it can be used to develop contour plots of an entire part. Proper tooling must be used. An x-ray film with an S-shaped characteristic curve or a digital x-ray device with a product resulting in like characteristics is necessary. If a film exists with linear characteristics, this type of film would be ideal; however, at the time of this reporting, no such film has been known. Machined components (with known fractional thicknesses) of a like material (similar density) to that of the material to be measured are necessary. The machined components should have machined through-holes. For ease of use and better accuracy, the throughholes should be a size larger than 0.125 in. (.3 mm). Standard components for this use are known as penetrameters or image quality indicators. Also needed is standard x-ray equipment, if film is used in place of digital equipment, or x-ray digitization equipment with proven conversion properties. Typical x-ray digitization equipment is commonly used in the medical industry, and creates digital images of x-rays in DICOM format. It is recommended to scan the image in a 16-bit format. However, 12-bit and 8-bit resolutions are acceptable. Finally, x-ray analysis software that allows accurate digital image density calculations, such as Image-J freeware, is needed. The actual procedure requires the test article to be placed on the raw x-ray, ensuring the region of interest is aligned for perpendicular x-ray exposure capture. One or multiple machined components of like material/ density with known thicknesses are placed atop the part (preferably in a region of nominal and non-varying thickness) such that exposure of the combined part and machined component lay-up is captured on the x-ray. Depending on the accuracy required, the machined component fs thickness must be carefully chosen. Similarly, depending on the accuracy required, the lay-up must be exposed such that the regions of the x-ray to be analyzed have a density range between 1 and 4.5. After the exposure, the image is digitized, and the digital image can then be analyzed using the image analysis software.

Soft X-ray Focusing Telescope Aboard AstroSat: Design, Characteristics and Performance

NASA Astrophysics Data System (ADS)

Singh, K. P.; Stewart, G. C.; Westergaard, N. J.; Bhattacharayya, S.; Chandra, S.; Chitnis, V. R.; Dewangan, G. C.; Kothare, A. T.; Mirza, I. M.; Mukerjee, K.; Navalkar, V.; Shah, H.; Abbey, A. F.; Beardmore, A. P.; Kotak, S.; Kamble, N.; Vishwakarama, S.; Pathare, D. P.; Risbud, V. M.; Koyande, J. P.; Stevenson, T.; Bicknell, C.; Crawford, T.; Hansford, G.; Peters, G.; Sykes, J.; Agarwal, P.; Sebastian, M.; Rajarajan, A.; Nagesh, G.; Narendra, S.; Ramesh, M.; Rai, R.; Navalgund, K. H.; Sarma, K. S.; Pandiyan, R.; Subbarao, K.; Gupta, T.; Thakkar, N.; Singh, A. K.; Bajpai, A.

2017-06-01

The Soft X-ray focusing Telescope (SXT), India's first X-ray telescope based on the principle of grazing incidence, was launched aboard the AstroSat and made operational on October 26, 2015. X-rays in the energy band of 0.3-8.0 keV are focussed on to a cooled charge coupled device thus providing medium resolution X-ray spectroscopy of cosmic X-ray sources of various types. It is the most sensitive X-ray instrument aboard the AstroSat. In its first year of operation, SXT has been used to observe objects ranging from active stars, compact binaries, supernova remnants, active galactic nuclei and clusters of galaxies in order to study its performance and quantify its characteriztics. Here, we present an overview of its design, mechanical hardware, electronics, data modes, observational constraints, pipeline processing and its in-orbit performance based on preliminary results from its characterization during the performance verification phase.

Optical and X-ray studies of Compact X-ray Binaries in NGC 5904

NASA Astrophysics Data System (ADS)

Bhalotia, Vanshree; Beck-Winchatz, Bernhard

2018-06-01

Due to their high stellar densities, globular cluster systems trigger various dynamical interactions, such as the formation of compact X-ray binaries. Stellar collisional frequencies have been correlated to the number of X-ray sources detected in various clusters and we hope to measure this correlation for NGC 5904. Optical fluxes of sources from archival HST images of NGC 5904 have been measured using a DOLPHOT PSF photometry in the UV, optical and near-infrared. We developed a data analysis pipeline to process the fluxes of tens of thousands of objects using awk, python and DOLPHOT. We plot color magnitude diagrams in different photometric bands in order to identify outliers that could be X-ray binaries, since they do not evolve the same way as singular stars. Aligning previously measured astrometric data for X-ray sources in NGC 5904 from Chandra with archival astrometric data from HST will filter out the outlier objects that are not X-ray producing, and provide a sample of compact binary systems that are responsible for X-ray emission in NGC 5904. Furthermore, previously measured X-ray fluxes of NGC 5904 from Chandra have also been used to measure the X-ray to optical flux ratio and identify the types of compact X-ray binaries responsible for the X-ray emissions in NGC 5904. We gratefully acknowledge the support from the Illinois Space Grant Consortium.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Curved focusing crystals for hard X-ray astronomy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferrari, C., E-mail: ferrari@imem.cnr.it; Buffagni, E.; Bonnini, E.

A lens made by a properly arranged array of crystals can be used to focus x-rays of energy ranging from 30 to 500 keV for x-ray astronomy. Mosaic or curved crystals can be employed as x-ray optical elements. In this work self standing curved focusing Si and GaAs crystals in which the lattice bending is induced by a controlled damaging process on one side of planar crystals are characterized. Diffraction profiles in Laue geometry have been measured in crystals at x-ray energies E = 17, 59 and 120 keV. An enhancement of diffraction efficiency is found in asymmetric geometries.