Sample records for yba2cu3oy thin films

  1. Single domain YBa2Cu3Oy thick films on metallic substrates

    NASA Astrophysics Data System (ADS)

    Reddy, E. S.; Noudem, J. G.; Goodilin, E. A.; Tarka, M.; Schmitz, G. J.

    2003-03-01

    The fabrication of single domain YBa2Cu3Oy (123) thick films (10-100 mum) on metallic substrates is reported. The process involves the formation of the 123 phase by a peritectic reaction between an air-brushed dense Y2BaCuO5 (211) layer on a Ag12Pd substrate and infiltrated liquid phases containing barium cuprates and copper oxides. Single domain growth is achieved by seeding the green films with a c-axis oriented NdBa2Cu3Oy crystal prior to processing. The maximum processing temperatures are lowered to 970 °C by modifying the characteristics of the liquid phases meant for infiltration by addition of Ag powder. The fabrication technique, processing conditions for single domain growth and the resulting microstructures are discussed.

  2. High field charge order across the phase diagram of YBa2Cu3Oy

    NASA Astrophysics Data System (ADS)

    Laliberté, Francis; Frachet, Mehdi; Benhabib, Siham; Borgnic, Benjamin; Loew, Toshinao; Porras, Juan; Le Tacon, Mathieu; Keimer, Bernhard; Wiedmann, Steffen; Proust, Cyril; LeBoeuf, David

    2018-03-01

    In hole-doped cuprates there is now compelling evidence that inside the pseudogap phase, charge order breaks translational symmetry. In YBa2Cu3Oy charge order emerges in two steps: a 2D order found at zero field and at high temperature inside the pseudogap phase, and a 3D order that is superimposed below the superconducting transition Tc when superconductivity is weakened by a magnetic field. Several issues still need to be addressed such as the effect of disorder, the relationship between those charge orders and their respective impact on the Fermi surface. Here, we report high magnetic field sound velocity measurements of the 3D charge order in underdoped YBa2Cu3Oy in a large doping range. We found that the 3D charge order exists over the same doping range as its 2D counterpart, indicating an intimate connection between the two distinct orders. Moreover, our data suggest that 3D charge order has only a limited impact on low-lying electronic states of YBa2Cu3Oy.

  3. Influence of calcium on transport properties, band spectrum and superconductivity of YBa2Cu3O(y) and YBa(1.5)La(0.5)Cu3O(y)

    NASA Technical Reports Server (NTRS)

    Gasumyants, V. E.; Vladimirskaya, E. V.; Patrina, I. B.

    1995-01-01

    The comparative investigation of transport phenomena in Y(1-x)Ca(x)Ba2Cu3O(y) (0 is less than x is less than 0.25; 6.96 is greater than y is greater than 6.87 and 6.73 is less than x is less than 6.53); Y(1-x)Ca(x)Ba(1.5)La(0.5)Cu3O(y) (0 is less than x is less than 0.5; 7.12 is greater than y is greater than 6.96) and YBa(2-x)La(x)Cu3O(y) (0 is less than x is less than 0.5; 6.95 is less than y is less than 7.21) systems have been carried out. The temperature dependencies of resistivity and thermopower have been measured. It was found that the S(T) dependencies take some additional features with Ca content increase. The results obtained have been analyzed on the basis of the phenomenological theory of electron transport in the case of the narrow conductive band. The main parameters of the band spectrum (the band filling with electrons degree and the total effective band width) have been determined. The dependencies of these from contents of substituting elements are discussed. Analyzing the results obtained simultaneously with the tendencies in oxygen content and critical temperature change we have confirmed the conclusion that the oxygen sublattice disordering has a determinant effect on band structure parameters and superconductive properties of YBa2Cu3O(y). The results obtained suggest that Ca gives rise to some peculiarities in band spectrum of this compound.

  4. Sequentially evaporated thin film YBa2Cu3O(7-x) superconducting microwave ring resonator

    NASA Technical Reports Server (NTRS)

    Rohrer, Norman J.; To, Hing Y.; Valco, George J.; Bhasin, Kul B.; Chorey, Chris; Warner, Joseph D.

    1990-01-01

    There is great interest in the application of thin film high temperature superconductors in high frequency electronic circuits. A ring resonator provides a good test vehicle for assessing the microwave losses in the superconductor and for comparing films made by different techniques. Ring resonators made of YBa2Cu3O(7-x) have been investigated on LaAlO3 substrates. The superconducting thin films were deposited by sequential electron beam evaporation of Cu, Y, and BaF2 with a post anneal. Patterning of the superconducting film was done using negative photolithography. A ring resonator was also fabricated from a thin gold film as a control. Both resonators had a gold ground plane on the backside of the substrate. The ring resonators' reflection coefficients were measured as a function of frequency from 33 to 37 GHz at temperatures ranging from 20 K to 68 K. The resonator exhibited two resonances which were at 34.5 and 35.7 GHz at 68 K. The resonant frequencies increased with decreasing temperature. The magnitude of the reflection coefficients was in the calculation of the unloaded Q-values. The performance of the evaporated and gold resonator are compared with the performance of a laser ablated YBa2Cu3O(7-x) resonator. The causes of the double resonance are discussed.

  5. Superconducting YBa2Cu3O7- δ Thin Film Detectors for Picosecond THz Pulses

    NASA Astrophysics Data System (ADS)

    Probst, P.; Scheuring, A.; Hofherr, M.; Wünsch, S.; Il'in, K.; Semenov, A.; Hübers, H.-W.; Judin, V.; Müller, A.-S.; Hänisch, J.; Holzapfel, B.; Siegel, M.

    2012-06-01

    Ultra-fast THz detectors from superconducting YBa2Cu3O7- δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

  6. YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

    NASA Technical Reports Server (NTRS)

    Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

    1993-01-01

    Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

  7. Cation disorder and gas phase equilibrium in an YBa 2Cu 3O 7- x superconducting thin film

    NASA Astrophysics Data System (ADS)

    Shin, Dong Chan; Ki Park, Yong; Park, Jong-Chul; Kang, Suk-Joong L.; Yong Yoon, Duk

    1997-02-01

    YBa 2Cu 3O 7- x superconducting thin films have been grown by in situ off-axis rf sputtering with varying oxygen pressure, Ba/Y ratio in a target, and deposition temperature. With decreasing oxygen pressure, increasing Ba/Y ratio, increasing deposition temperature, the critical temperature of the thin films decreased and the c-axis length increased. The property change of films with the variation of deposition variables has been explained by a gas phase equilibrium of the oxidation reaction of Ba and Y. Applying Le Chatelier's principle to the oxidation reaction, we were able to predict the relation of deposition variables and the resultant properties of thin films; the prediction was in good agreement with the experimental results. From the relation between the three deposition variables and gas phase equilibrium, a 3-dimensional processing diagram was introduced. This diagram has shown that the optimum deposition condition of YBa 2Cu 3O 7- x thin films is not a fixed point but can be varied. The gas phase equilibrium can also be applied to the explanation of previous results that good quality films were obtained at low deposition temperature using active species, such as O, O 3, and O 2+.

  8. Spin susceptibility of charge-ordered YBa2Cu3Oy across the upper critical field

    NASA Astrophysics Data System (ADS)

    Zhou, Rui; Hirata, Michihiro; Wu, Tao; Vinograd, Igor; Mayaffre, Hadrien; Krämer, Steffen; Reyes, Arneil P.; Kuhns, Philip L.; Liang, Ruixing; Hardy, W. N.; Bonn, D. A.; Julien, Marc-Henri

    2017-12-01

    The value of the upper critical field Hc2, a fundamental characteristic of the superconducting state, has been subject to strong controversy in high-Tc copper oxides. Since the issue has been tackled almost exclusively by macroscopic techniques so far, there is a clear need for local-probe measurements. Here, we use 17O NMR to measure the spin susceptibility χspin of the CuO2 planes at low temperature in charge-ordered YBa2Cu3Oy. We find that χspin increases (most likely linearly) with magnetic field H and saturates above field values ranging from 20 T to 40 T. This result is consistent with the lowest Hc2 values claimed previously and with the interpretation that the charge density wave (CDW) reduces Hc2 in underdoped YBa2Cu3Oy. Furthermore, the absence of marked deviation in χspin(H) at the onset of long-range CDW order indicates that this Hc2 reduction and the Fermi-surface reconstruction are primarily rooted in the short-range CDW order already present in zero field, not in the field-induced long-range CDW order. Above Hc2, the relatively low values of T= 2 K show that the pseudogap is a ground-state property, independent of the superconducting gap.

  9. Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

    1988-03-01

    High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

  10. Spin susceptibility of charge-ordered YBa2Cu3Oy across the upper critical field

    PubMed Central

    Zhou, Rui; Hirata, Michihiro; Wu, Tao; Vinograd, Igor; Mayaffre, Hadrien; Krämer, Steffen; Reyes, Arneil P.; Kuhns, Philip L.; Liang, Ruixing; Hardy, W. N.; Bonn, D. A.; Julien, Marc-Henri

    2017-01-01

    The value of the upper critical field Hc2, a fundamental characteristic of the superconducting state, has been subject to strong controversy in high-Tc copper oxides. Since the issue has been tackled almost exclusively by macroscopic techniques so far, there is a clear need for local-probe measurements. Here, we use 17O NMR to measure the spin susceptibility χspin of the CuO2 planes at low temperature in charge-ordered YBa2Cu3Oy. We find that χspin increases (most likely linearly) with magnetic field H and saturates above field values ranging from 20 T to 40 T. This result is consistent with the lowest Hc2 values claimed previously and with the interpretation that the charge density wave (CDW) reduces Hc2 in underdoped YBa2Cu3Oy. Furthermore, the absence of marked deviation in χspin(H) at the onset of long-range CDW order indicates that this Hc2 reduction and the Fermi-surface reconstruction are primarily rooted in the short-range CDW order already present in zero field, not in the field-induced long-range CDW order. Above Hc2, the relatively low values of χspin at T= 2 K show that the pseudogap is a ground-state property, independent of the superconducting gap. PMID:29183974

  11. Evidence for a small hole pocket in the Fermi surface of underdoped YBa2Cu3Oy

    PubMed Central

    Doiron-Leyraud, N.; Badoux, S.; René de Cotret, S.; Lepault, S.; LeBoeuf, D.; Laliberté, F.; Hassinger, E.; Ramshaw, B. J.; Bonn, D. A.; Hardy, W. N.; Liang, R.; Park, J.-H..; Vignolles, D.; Vignolle, B.; Taillefer, L.; Proust, C.

    2015-01-01

    In underdoped cuprate superconductors, the Fermi surface undergoes a reconstruction that produces a small electron pocket, but whether there is another, as yet, undetected portion to the Fermi surface is unknown. Establishing the complete topology of the Fermi surface is key to identifying the mechanism responsible for its reconstruction. Here we report evidence for a second Fermi pocket in underdoped YBa2Cu3Oy, detected as a small quantum oscillation frequency in the thermoelectric response and in the c-axis resistance. The field-angle dependence of the frequency shows that it is a distinct Fermi surface, and the normal-state thermopower requires it to be a hole pocket. A Fermi surface consisting of one electron pocket and two hole pockets with the measured areas and masses is consistent with a Fermi-surface reconstruction by the charge–density–wave order observed in YBa2Cu3Oy, provided other parts of the reconstructed Fermi surface are removed by a separate mechanism, possibly the pseudogap. PMID:25616011

  12. Coherence and superconductivity in coupled one-dimensional chains: a case study of YBa2Cu3Oy.

    PubMed

    Lee, Y-S; Segawa, Kouji; Ando, Yoichi; Basov, D N

    2005-04-08

    We report the infrared (IR) response of Cu-O chains in the high-T(c) superconductor YBa(2)Cu(3)O(y) over the doping range spanning y=6.28-6.75. We find evidence for a power law scaling at mid-IR frequencies consistent with predictions for Tomonaga-Luttinger liquid, thus supporting the notion of one-dimensional transport in the chains. We analyze the role of coupling to the CuO2 planes in establishing metallicity and superconductivity in disordered chain fragments.

  13. Growth, patterning, and weak-link fabrication of superconducting YBa2Cu3O(7-x) thin films

    NASA Astrophysics Data System (ADS)

    Hilton, G. C.; Harris, E. B.; van Harlingen, D. J.

    1988-09-01

    Thin films of the high-temperature superconducting ceramic oxides have been grown, and techniques for fabricating weak-link structures have been investigated. Films of YBa2Cu3O(7-x) grown on SrTiO3 by a combination of dc magnetron sputtering and thermal evaporation from the three sources have been patterned into microbridges with widths down to 2 microns. Evidence is found that the bridges behave as arrays of Josephson-coupled superconducting islands. Further weak-link behavior is induced by in situ modification of the coupling by ion milling through the bridge.

  14. Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

    NASA Astrophysics Data System (ADS)

    Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

    1993-09-01

    A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

  15. Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

    NASA Technical Reports Server (NTRS)

    Chorey, C. M.; Miranda, F. A.; Bhasin, K. B.

    1991-01-01

    Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

  16. Laser-induced voltages at room temperature in YBa{sub 2}Cu{sub 3}O{sub 7} and Pr{sub x}Y{sub 1{minus}x}Ba{sub 2}Cu{sub 3}O{sub 7} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Habermeier, H.U.; Jisrawi, N.; Jaeger-Waldau, G.

    Recent reports on high transient transverse voltages at room temperature in YBa{sub 2}Cu{sub 3}O{sub 7} and Pr{sub x}Y{sub 1{minus}x}Ba{sub 2}Cu{sub 3}O{sub 7} thin films grown on SrTiO{sub 3} single crystal substrates, with a tilt angle between the [001] cubic axis and the substrate surface plane, have been interpreted by thermoelectric fields transverse to a laser-induced temperature gradient which are caused by the non-zero off diagonal elements of the Seebeck tensor. The authors have studied this effect in epitaxially grown Pr-doped, as well as undoped YBa{sub 2}Cu{sub 3}O{sub 7}, thin films and observed for a 2 mm long YBa{sub 2}Cu{sub 3}O{submore » 7} strip exposed to a UV photon fluence of 100 mJ/cm{sup 2} signals as large as 30 V. The unexpected high values for the signals and their doping dependence are discussed within the frame of a model based on a thermopile arrangement, the growth induced defect structure and the doping induced modifications of the material properties.« less

  17. Effect of processing parameters on the characteristics of high-Tc superconductor YBa2Cu3Oy

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.

    1988-01-01

    SEM, thermogravimetric analysis, powder X-ray diffraction,and measurements of electrical resistivity and magnetic susceptibility, are presently used to characterize the influence of sintering temperature, sintering and annealing atmospheres, and quench-rate on the properties of the YBa2Cu3Oy superconducting oxide. It is established that annealing in oxygen, together with slow cooling rates, are required for preparation of high-Tc superconductors with sharp transitions; rapid quenching from high temperature does not yield good superconductors, due to low oxygen content.

  18. Magnetoresistivity of thin YBa2Cu3O7-δ films on sapphire substrate

    NASA Astrophysics Data System (ADS)

    Probst, Petra; Il'in, Konstantin; Engel, Andreas; Semenov, Alexei; Hübers, Heinz-Wilhelm; Hänisch, Jens; Holzapfel, Bernhardt; Siegel, Michael

    2012-09-01

    Magnetoresistivity of YBa2Cu3O7-δ films with thicknesses between 7 and 100 nm deposited on CeO2 and PrBa2Cu3O7-δ buffer layers on sapphire substrate has been measured to analyze the temperature dependence of the second critical magnetic field Bc2. To define Bc2, the mean-field transition temperature Tc was evaluated by fitting the resistive transition in zero magnetic field with the fluctuation conductivity theory of Aslamazov and Larkin. At T → Tc the Bc2(T) dependence shows a crossover from downturn to upturn curvature with the increase in film thickness.

  19. Atomic-scale identification of novel planar defect phases in heteroepitaxial YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Gauquelin, Nicolas; Zhang, Hao; Zhu, Guozhen; Wei, John Y. T.; Botton, Gianluigi A.

    2018-05-01

    We have discovered two novel types of planar defects that appear in heteroepitaxial YBa2Cu3O7-δ (YBCO123) thin films, grown by pulsed-laser deposition (PLD) either with or without a La2/3Ca1/3MnO3 (LCMO) overlayer, using the combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and electron energy loss spectroscopy (EELS) mapping for unambiguous identification. These planar lattice defects are based on the intergrowth of either a BaO plane between two CuO chains or multiple Y-O layers between two CuO2 planes, resulting in non-stoichiometric layer sequences that could directly impact the high-Tc superconductivity.

  20. Superconductor-to-insulator transition and transport properties of underdoped YBa2Cu3O(y) crystals.

    PubMed

    Semba, K; Matsuda, A

    2001-01-15

    The carrier-concentration-driven superconductor-to-insulator (SI) transition as well as transport properties in underdoped YBa2Cu3O(y) twinned crystals is studied. The SI transition takes place at y approximately 6.3, carrier concentration n(SI)H approximately 3x10(20) cm(-3), anisotropy rho(c)/rho(ab) approximately 10(3), and the threshold resistivity rho(SI)ab approximately 0.8 mOmega cm which corresponds to a critical sheet resistance h/4e2 approximately 6.5 kOmega per CuO2 bilayer. The evolution of a carrier, nH infiniti y - 6.2, is clearly observed in the underdoped region. The resistivity and Hall coefficient abruptly acquire strong temperature dependence at y approximately 6.5 indicating a radical change in the electronic state.

  1. Magnetic susceptibility of YBa2(Cu/1-x/Fe/x/)3O(y) prepared by various heat treatments

    NASA Astrophysics Data System (ADS)

    Shibata, Tomohiko; Katsuyama, Shigeru; Yoshimura, Kazuyoshi; Kosuge, Koji

    1991-02-01

    The magnetic susceptibility of YBa2(Cu/1-x/Fe/x/)3O(y) specimens was measured following a standard heat treatment and a special heat treament stabilizing the orthorhombic phase to higher Fe concentrations. The values of the effective magnetic moment per Fe in the Cu1 site, estimated from the magnetic susceptibility and Mossbauer effect measurements, were 4.4 and 2.2 muB for the standard and specially treated specimens, respectively. The smaller effective magnetic moment in the case of specially treated specimens is attributed to the antiferromagnetic coupling between Fe spins at high temperatures.

  2. Formation of high-Tc YBa2Cu3O(7-delta) films on Y2BaCuO5 substrate

    NASA Astrophysics Data System (ADS)

    Wang, W. N.; Lu, H. B.; Lin, W. J.; Yao, P. C.; Hsu, H. E.

    1988-07-01

    High-Tc superconducting YBa2Cu3O(7-delta) films have been successfully prepared on green Y2BaCuO5 (2115) ceramic substrate. The films have been formed by RF sputtering and screen printing with post annealing at 925 C. Regarding superconducting features, the sharp resistivity drop with Tc onset around 95 K (midpoint 84 K) and 99 K (midpoint 89 K) has been observed for RF sputtered and printed films respectively. Both films show the excellent adhesion towards the 2115 substrate. Powder X-ray diffraction profiles indicate a majority of 1237 phase with preferred orientation for RF sputtered thin film.

  3. The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

    NASA Astrophysics Data System (ADS)

    Gao, J.; Tang, W. H.; Yau, C. Y.

    2001-11-01

    Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

  4. Mixed pinning landscape in nanoparticle-introduced YGdBa2Cu3Oy films grown by metal organic deposition

    NASA Astrophysics Data System (ADS)

    Miura, M.; Maiorov, B.; Baily, S. A.; Haberkorn, N.; Willis, J. O.; Marken, K.; Izumi, T.; Shiohara, Y.; Civale, L.

    2011-05-01

    We study the field (H) and temperature (T) dependence of the critical current density (Jc) and irreversibility field (Hirr) at different field orientations in Y0.77Gd0.23Ba2Cu3Oy with randomly distributed BaZrO3 nanoparticles (YGdBCO+BZO) and YBa2Cu3Oy (YBCO) films. Both MOD films have large RE2Cu2O5 (225) nanoparticles (˜80 nm in diameter) and a high density of twin boundaries (TB). In addition, YGdBCO+BZO films have a high density of BZO nanoparticles (˜25 nm in diameter). At high temperatures (T > 40 K), the superconducting properties, such as Jc, Hirr, and flux creep rates, are greatly affected by the BZO nanoparticles, while at low temperatures the superconducting properties of both the YBCO and YGdBCO+BZO films show similar field and temperature dependencies. In particular, while the Jc of YBCO films follow a power-law dependence (∝H-α) at all measured T, this dependence is only followed at low T for YGdBCO+BZO films. As a function of T, the YGdBCO+BZO film shows Jc(T,0.01T)~[1-(T/Tc)2]n with n ˜ 1.24 ± 0.05, which points to “δTc pinning.” We analyze the role of different types of defects in the different temperature regimes and find that the strong pinning of the BZO nanoparticles yields a higher Hirr and improved Jc along the c axis and at intermediate orientations at high T. The mixed pinning landscapes due to the presence of disorder of various dimensionalities have an important role in the improvement of in-field properties.

  5. Magnetic flux relaxation in YBa2Cu3)(7-x) thin film: Thermal or athermal

    NASA Technical Reports Server (NTRS)

    Vitta, Satish; Stan, M. A.; Warner, J. D.; Alterovitz, S. A.

    1991-01-01

    The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H is parallel to c was studied in the range 4.2 - 40 K and 0.2 - 1.0 T. Both the normalized flux relaxation rate S and the net flux pinning energy U increase continuously from 1.3 x 10(exp -2) to 3.0 x 10(exp -2) and from 70 to 240 meV respectively, as the temperature T increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.

  6. Direct observation of twin deformation in YBa2Cu3O7-x thin films by in situ nanoindentation in TEM

    NASA Astrophysics Data System (ADS)

    Lee, Joon Hwan; Zhang, Xinghang; Wang, Haiyan

    2011-04-01

    The deformation behaviors of YBa2Cu3O7-x (YBCO) thin films with twinning structures were studied via in situ nanoindentation experiments in a transmission electron microscope. The YBCO films were grown on SrTiO3 (001) substrates by pulsed laser deposition. Both ex situ (conventional) and in situ nanoindentation were conducted to reveal the deformation of the YBCO films from the directions perpendicular and parallel to the twin interfaces. The hardness measured perpendicular to the twin interfaces is ˜50% and 40% higher than that measured parallel to the twin interfaces ex situ and in situ, respectively. Detailed in situ movie analysis reveals that the twin structures play an important role in deformation and strengthening mechanisms in YBCO thin films.

  7. Magnetic penetration depth of YBa2Cu3O(7-delta) thin films determined by the power transmission method

    NASA Technical Reports Server (NTRS)

    Heinen, Vernon O.; Miranda, Felix A.; Bhasin, Kul B.

    1992-01-01

    A power transmission measurement technique was used to determine the magnetic penetration depth (lambda) of YBa2Cu3O(7-delta) superconducting thin films on LaAlO3 within the 26.5 to 40.0 GHz frequency range, and at temperatures from 20 to 300 K. Values of lambda ranging from 1100 to 2500 A were obtained at low temperatures. The anisotropy of lambda was determined from measurements of c-axis and a-axis oriented films. An estimate of the intrinsic value of lambda of 90 +/- 30 nm was obtained from the dependence of lambda on film thickness. The advantage of this technique is that it allows lambda to be determined nondestructively.

  8. Desorption of oxygen from YBa2Cu3O6+x films studied by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Bock, A.; Kürsten, R.; Brühl, M.; Dieckmann, N.; Merkt, U.

    1996-08-01

    Phonons of laser-deposited YBa2Cu3O6+x films on MgO(100) substrates are investigated in a Raman setup as a function of laser power density. Investigations of YBa2Cu3O7 films allow us to study oxygen out-diffusion, where the onset of out-diffusion is indicated by the appearance of disorder-induced modes in the Raman spectra. At a pressure of 5×10-6 mbar the temperature threshold of the out-diffusion is (490+/-15) K. With increasing oxygen pressure the observed temperature thresholds rise only moderately in contrast to the behavior expected from the pox-T phase diagram of YBa2Cu3O6+x. Even at 1 bar oxygen partial pressure out-diffusion is observed and tetragonal sites with x=0 develop. These observations can be explained by photon-stimulated desorption of oxygen. Investigations of YBa2Cu3O6 films allow us to study oxygen in-diffusion. In 1 bar oxygen we observe competing oxygen fluxes due to thermally activated diffusion and photon-stimulated desorption. From these measurements we determine an upper bound of the thermal activation energy of the oxygen in-diffusion into YBa2Cu3O6 films of (0.19+/-0.01) eV.

  9. Metal-to-insulator crossover in YBa2Cu3Oy probed by low-temperature quasiparticle heat transport.

    PubMed

    Sun, X F; Segawa, Kouji; Ando, Yoichi

    2004-09-03

    It was recently demonstrated that in La2-xSrxCuO4 the magnetic-field (H) dependence of the low-temperature thermal conductivity kappa up to 16 T reflects whether the normal state under high magnetic field is a metal or an insulator. We measure the H dependence of kappa in YBa(2)Cu(3)O(y) (YBCO) at subkelvin temperatures for a wide doping range, and find that at low doping the kappa(H) behavior signifies the change in the ground state in this system as well. Surprisingly, the critical doping is found to be located deeply inside the underdoped region, about the hole doping of 0.07 hole/Cu; this critical doping is apparently related to the stripe correlations as revealed by the in-plane resistivity anisotropy.

  10. Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

    NASA Astrophysics Data System (ADS)

    Warner, J. D.; Meola, J. E.; Jenkins, K. A.; Bhasin, K. B.

    1990-04-01

    The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

  11. Magnetic flux relaxation in YBa2Cu3O(7-x) thin film: Thermal or athermal

    NASA Technical Reports Server (NTRS)

    Vitta, Satish; Stan, M. A.; Warner, Joseph D.; Alterovitz, Samuel A.

    1992-01-01

    The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H parallel c was studied in the range of 4.2-40 k and 0.2-1.0 T. Both the normalized flux relaxation rate (S) and the net flux pinning energy (U) increase continuously from 1.3 x 10 exp -2 to 3.0 x 10 exp -2 and from 70-240 meV respectively, as the temperature (T) increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.

  12. Scanning micro-Hall probe mapping of magnetic flux distributions and current densities in YBa2Cu3O7 thin films

    NASA Technical Reports Server (NTRS)

    Xing, W.; Heinrich, B.; Zhou, HU; Fife, A. A.; Cragg, A. R.; Grant, P. D.

    1995-01-01

    Mapping of the magnetic flux density B(sub z) (perpendicular to the film plane) for a YBa2Cu3O7 thin-film sample was carried out using a scanning micro-Hall probe. The sheet magnetization and sheet current densities were calculated from the B(sub z) distributions. From the known sheet magnetization, the tangential (B(sub x,y)) and normal components of the flux density B were calculated in the vicinity of the film. It was found that the sheet current density was mostly determined by 2B(sub x,y)/d, where d is the film thickness. The evolution of flux penetration as a function of applied field will be shown.

  13. Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

    NASA Astrophysics Data System (ADS)

    Gao, J.; Kang, L.; Wong, H. Y.; Cheung, Y. L.; Yang, J.

    Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu2CuO4/YSZ (yttrium-stabilized ZrO2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu2CuO4/YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

  14. Magnetoresistivity and microstructure of YBa2Cu3Oy prepared using planetary ball milling

    NASA Astrophysics Data System (ADS)

    Hamrita, A.; Ben Azzouz, F.; Madani, A.; Ben Salem, M.

    2012-01-01

    We have studied the microstructure and the magnetoresistivity of polycrystalline YBa2Cu3Oy (YBCO or Y-123 for brevity) embedded with nanoparticles of Y-deficient YBCO, generated by the planetary ball milling technique. Bulk samples were synthesized from a precursor YBCO powder, which was prepared from commercial high purity Y2O3, Ba2CO3 and CuO via a one-step annealing process in air at 950 °C. After planetary ball milling of the precursor, the powder was uniaxially pressed and subsequently annealed at 950 °C in air. Phase analysis by X-ray diffraction (XRD), granular structure examination by scanning electron microscopy (SEM), microstructure investigation by transmission electron microscopy (TEM) coupled with energy dispersive X-ray spectroscopy (EDXS) were carried out. TEM analyses show that nanoparticles of Y-deficient YBCO, generated by ball milling, are embedded in the superconducting matrix. Electrical resistance as a function of temperature, ρ(T), revealed that the zero resistance temperature, Tco, is 84.5 and 90 K for the milled and unmilled samples respectively. The milled ceramics exhibit a large magnetoresistance in weak magnetic fields at liquid nitrogen temperature. This attractive effect is of high significance as it makes these materials promising candidates for practical application in magnetic field sensor devices.

  15. The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Mogro-Campero, A.; Turner, L. G.; Bogorad, A.; Herschitz, R.

    1991-01-01

    Thin films of YBa2Cu3O(7-x) (YBCO) were temperature cycled to simulate conditions of a low earth orbit satellite. In one series of tests, epitaxial and polycrystalline YBCO films were cycled between temperatures of +/- 80 C in vacuum and in nitrogen for hundreds of cycles. The room temperature resistance of an epitaxial YBCO film increased by about 10 percent, but the superconducting transition temperature was unchanged. The largest changes were for a polycrystalline YBCO film on oxidized silicon with a zirconia buffer layer, for which the transition temperature decreased by 3 K. An extended test was carried out for epitaxial films. After 3200 cycles (corresponding to about 230 days in space), transition temperatures and critical current densities remained unchanged.

  16. Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

    NASA Astrophysics Data System (ADS)

    Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

    2018-03-01

    It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

  17. Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films

    NASA Technical Reports Server (NTRS)

    Wosik, J.; Robin, T.; Davis, M.; Wolfe, J. C.; Forster, K.; Deshmukh, S.; Bensaoula, A.; Sega, R.; Economou, D.; Ignatiev, A.

    1990-01-01

    Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

  18. Temperature dependence of superfluid density in YBa 2Cu 3O 7- δ and Y 0.7Ca 0.3Ba 2Cu 3O 7- δ thin films: A doping dependence study of the linear slope

    NASA Astrophysics Data System (ADS)

    Lai, L. S.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

    2005-11-01

    By using a microstrip ring resonator to measure the temperature dependence of the in-plane magnetic penetration depth λ(T) in YBa2Cu3O7-δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7-δ (Ca-YBCO) epitaxially grown thin films, the linear temperature dependence of the superfluid density ρs/m∗ ≡ 1/λ2(T) was observed from the under- to the overdoped regime at the temperatures below T/Tc ≈ 0.3 . For the underdoped regime of YBCO and Ca-YBCO thin films, the magnitude of the slope d(1/λ2(T))/dT is insensitive to doping, and it can be treated in the framework of projected d-density-wave model. Combining these slope values with the thermal conductivity measurements, the Fermi-liquid correction factor α2 from the Fermi-liquid model, suggested by Wen and Lee, was revealed here with various doping levels.

  19. Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

    NASA Technical Reports Server (NTRS)

    Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

    1992-01-01

    High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

  20. Large area ion beam sputtered YBa2Cu3O(7-delta) films for novel device structures

    NASA Astrophysics Data System (ADS)

    Gauzzi, A.; Lucia, M. L.; Kellett, B. J.; James, J. H.; Pavuna, D.

    1992-03-01

    A simple single-target ion-beam system is employed to manufacture large areas of uniformly superconducting YBa2Cu3O(7-delta) films which can be reproduced. The required '123' stoichiometry is transferred from the target to the substrate when ion-beam power, target/ion-beam angle, and target temperature are adequately controlled. Ion-beam sputtering is experimentally demonstrated to be an effective technique for producing homogeneous YBa2Cu3O(7-delta) films.

  1. Epitaxial growth and properties of YBa2Cu3O(x)-Pb(Zr(0.6)Ti(0.4))O3-YBa2Cu3O(x) trilayer structure by laser ablation

    NASA Astrophysics Data System (ADS)

    Boikov, Iu. A.; Esaian, S. K.; Ivanov, Z. G.; Brorsson, G.; Claeson, T.; Lee, J.; Safari, A.

    1992-08-01

    YBa2Cu3O(x)Pb(Zr(0.6)Ti(0.4))O3-YBa2Cu3O(x) multilayer structure has been grown on SrTiO3 and Al2O3 substrates using laser ablation. The deposition conditions for the growth of trilayers and their properties are studied in this investigation. Scanning electron microscope images and X-ray diffraction analyses indicate that all the constituent films in the trilayer grow epitaxially on SrTiO3 and were highly oriented on Al2O3. Transport measurements on these multilayers show that top YBa2Cu3O(x) films have good superconducting properties.

  2. Shaping and reinforcement of melt textured YBa2Cu3O7-δ superconductors

    NASA Astrophysics Data System (ADS)

    Meslin, S.; Harnois, C.; Chubilleau, C.; Horvath, D.; Grossin, D.; Suddhakar, E. R.; Noudem, J. G.

    2006-07-01

    From porous Y2BaCuO5 (Y211) with various grain sizes, single domain ceramic composites YBa2Cu3Oy/Y2BaCuO5 have been prepared by combination of the infiltration and top seed growth (ITSG) process. In addition, perforated Y123 has been prepared from Y211 by the ITSG method in order to magnify the specific surface and then increase oxygen diffusion into the core of the material. Magnetic and electrical properties were determined and correlate well with the microstructure of the composites and were compared to the conventional doped or undoped YBa2Cu3Oy (Y123). From magnetic measurements, high critical current densities, Jc, of 86 000 A cm-2 have been measured. Transport Jc values higher than 10 600 A cm-2 are reached at 77 K and 0 T, corresponding to the nominal critical currents of 325 A injected reproducibly through sections less than 3.082 mm2. This confirms the high quality of single domains obtained with a well controlled ITSG process. On the other hand, the perforated samples were reinforced using resin impregnation and the flux mapping has been investigated.

  3. Nonthermal response of YBa2Cu3O7-δ thin films to picosecond THz pulses

    NASA Astrophysics Data System (ADS)

    Probst, P.; Semenov, A.; Ries, M.; Hoehl, A.; Rieger, P.; Scheuring, A.; Judin, V.; Wünsch, S.; Il'in, K.; Smale, N.; Mathis, Y.-L.; Müller, R.; Ulm, G.; Wüstefeld, G.; Hübers, H.-W.; Hänisch, J.; Holzapfel, B.; Siegel, M.; Müller, A.-S.

    2012-05-01

    The photoresponse of YBa2Cu3O7-δ thin film microbridges with thicknesses between 15 and 50 nm was studied in the optical and terahertz frequency range. The voltage transients in response to short radiation pulses were recorded in real time with a resolution of a few tens of picoseconds. The bridges were excited by either femtosecond pulses at a wavelength of 0.8 μm or broadband (0.1-1.5 THz) picosecond pulses of coherent synchrotron radiation. The transients in response to optical radiation are qualitatively well explained in the framework of the two-temperature model with a fast component in the picosecond range and a bolometric nanosecond component whose decay time depends on the film thickness. The transients in the THz regime showed no bolometric component and had amplitudes up to three orders of magnitude larger than the two-temperature model predicts. Additionally THz field-dependent transients in the absence of DC bias were observed. We attribute the response in the THz regime to a rearrangement of vortices caused by high-frequency currents.

  4. Determination of surface resistance and magnetic penetration depth of superconducting YBa2Cu3O(7-delta) thin films by microwave power transmission measurements

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Warner, J. D.; Miranda, F. A.; Gordon, W. L.; Newman, H. S.

    1991-01-01

    A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approximately 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approximately 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approximately 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition superconducting thin films at microwave frequencies.

  5. Determination of surface resistance and magnetic penetration depth of superconducting YBa2Cu3O(7-delta) thin films by microwave power transmission measurements

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Warner, J. D.; Miranda, F. A.; Gordon, W. L.; Newman, H. S.

    1990-01-01

    A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approx. 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approx. 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approx. 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition temperature superconducting thin films at microwave frequencies.

  6. Synthesis of YBa2CU3O7 using sub-atmospheric processing

    DOEpatents

    Wiesmann, Harold; Solovyov, Vyacheslav

    2004-09-21

    The present invention is a method of forming thick films of crystalline YBa.sub.2 Cu.sub.3 O.sub.7 that includes forming a precursor film comprising barium fluoride (BaF.sub.2), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500.degree. C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500.degree. C. in the presence of oxygen to form the crystalline YBa.sub.2 Cu.sub.3 O.sub.7 film. The YBa.sub.2 Cu.sub.3 O.sub.7 film formed by this method has a resistivity of from about 100 to about 600 .mu.Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1.0.times.10.sup.5 Ampere per square centimeter (0.1 MA/cm.sup.2) or greater.

  7. Two types of nematicity in the phase diagram of the cuprate superconductor YBa2Cu3Oy

    NASA Astrophysics Data System (ADS)

    Cyr-Choinière, O.; Grissonnanche, G.; Badoux, S.; Day, J.; Bonn, D. A.; Hardy, W. N.; Liang, R.; Doiron-Leyraud, N.; Taillefer, Louis

    2015-12-01

    Nematicity has emerged as a key feature of cuprate superconductors, but its link to other fundamental properties such as superconductivity, charge order, and the pseudogap remains unclear. Here we use measurements of transport anisotropy in YBa2Cu3Oy to distinguish two types of nematicity. The first is associated with short-range charge-density-wave modulations in a doping region near p =0.12 . It is detected in the Nernst coefficient, but not in the resistivity. The second type prevails at lower doping, where there are spin modulations but no charge modulations. In this case, the onset of in-plane anisotropy—detected in both the Nernst coefficient and the resistivity—follows a line in the temperature-doping phase diagram that tracks the pseudogap energy. We discuss two possible scenarios for the latter nematicity.

  8. Quasiparticle Scattering off Defects and Possible Bound States in Charge-Ordered YBa_{2}Cu_{3}O_{y}.

    PubMed

    Zhou, R; Hirata, M; Wu, T; Vinograd, I; Mayaffre, H; Krämer, S; Horvatić, M; Berthier, C; Reyes, A P; Kuhns, P L; Liang, R; Hardy, W N; Bonn, D A; Julien, M-H

    2017-01-06

    We report the NMR observation of a skewed distribution of ^{17}O Knight shifts when a magnetic field quenches superconductivity and induces long-range charge-density-wave (CDW) order in YBa_{2}Cu_{3}O_{y}. This distribution is explained by an inhomogeneous pattern of the local density of states N(E_{F}) arising from quasiparticle scattering off, yet unidentified, defects in the CDW state. We argue that the effect is most likely related to the formation of quasiparticle bound states, as is known to occur, under specific circumstances, in some metals and superconductors (but not in the CDW state, in general, except for very few cases in 1D materials). These observations should provide insight into the microscopic nature of the CDW, especially regarding the reconstructed band structure and the sensitivity to disorder.

  9. Environment-resistive coating for the thin-film-based superconducting fault-current limiter Ag/Au-Ag/YBa 2Cu 3O 7/CeO 2/Al 2O 3

    NASA Astrophysics Data System (ADS)

    Matsui, H.; Kondo, W.; Tsukada, K.; Sohma, M.; Yamaguchi, I.; Kumagai, T.; Manabe, T.; Arai, K.; Yamasaki, H.

    2010-02-01

    We have studied environment-resistive coatings (ERC) for the thin-film-based superconducting fault-current limiter (SFCL) Ag/Au-Ag/YBa 2Cu 3O 7/CeO 2/Al 2O 3. We evaluated nine candidate ERC materials by two accelerating-environment tests, and revealed that the shellac- and the fluorine-resin have a high environmental resistance. Especially, the shellac resin almost completely protected Jc of an element exposed to 60 °C saturated water vapor for 2 h (3.4->3.2 MA/cm 2). We also performed a practical operation test of SFCL using an element half covered by shellac, and found that the ERC does not diminish the current limiting properties similarly to the previous results of the Teflon-coated SFCL [1].

  10. Wet chemical passivation of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Hunt, B. D.; Foote, M. C.

    1990-01-01

    Wet chemical techniques are described for treatment of YBa2Cu3O(7-x) surfaces, which result in the formation of native compounds known to have little or no reactivity to water. Suitable native compounds include CuI, BaSO4, CuS, Cu2S, YF3, and the oxalates. Formation of surface layers in which these nonreactive native compounds are major constituents is verified with X-ray photoelectron spectroscopy (XPS) measurements on YBa2Cu3O(7-x) films treated with dilute solutions of HI, H2SO4, Na2S, HF, or H2C2O4. No significant changes are observed in the XPS spectra when the sulfide, sulfate, or oxalate films are dipped in water, while the iodide and fluoride films show evidence of reaction with water. X-ray diffraction measurements show that the superconducting phase is absent in the sulfide film, but is unaffected by the oxalate and sulfate treatments.

  11. Laser ablated YBa2Cu3O(7-x) high temperature superconductor coplanar waveguide resonator

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Blemker, A. R.; Bhasin, K. B.

    1992-01-01

    Several 8.8-GHz coplanar waveguide resonators are fabricated and tested that are made from laser ablated YBa2Cu3O(7-x) thin films on LaAlO3 substrates. A quality factor of 1250 at 77 K was measured. A correlation between the microwave performance of the resonators and the critical temperature and morphology of the films was observed.

  12. Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

    NASA Technical Reports Server (NTRS)

    Warner, Joseph D.; Bhasin, Kul B.; Miranda, Felix A.

    1991-01-01

    Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion.

  13. Transformational dynamics of BZO and BHO nanorods imposed by Y2O3 nanoparticles for improved isotropic pinning in YBa2Cu3O7 -δ thin films

    NASA Astrophysics Data System (ADS)

    Gautam, Bibek; Sebastian, Mary Ann; Chen, Shihong; Shi, Jack; Haugan, Timothy; Xing, Zhongwen; Zhang, Wenrui; Huang, Jijie; Wang, Haiyan; Osofsky, Mike; Prestigiacomo, Joseph; Wu, Judy Z.

    2017-07-01

    An elastic strain model was applied to evaluate the rigidity of the c-axis aligned one-dimensional artificial pinning centers (1D-APCs) in YBa2Cu3O7-δ matrix films. Higher rigidity was predicted for BaZrO3 1D-APCs than that of the BaHfO3 1D-APCs. This suggests a secondary APC doping of Y2O3 in the 1D-APC/YBa2Cu3O7-δ nanocomposite films would generate a stronger perturbation to the c-axis alignment of the BaHfO3 1D-APCs and therefore a more isotropic magnetic vortex pinning landscape. In order to experimentally confirm this, we have made a comparative study of the critical current density Jc (H, θ, T) of 2 vol.% BaZrO3 + 3 vol.%Y2O3 and 2 vol.%BaHfO3 + 3 vol.%Y2O3 double-doped (DD) YBa2Cu3O7-δ films deposited at their optimal growth conditions. A much enhanced isotropic pinning was observed in the BaHfO3 DD samples. For example, at 65 K and 9.0 T, the variation of the Jc across the entire θ range from θ=0 (H//c) to θ=90 degree (H//ab) is less than 18% for BaHfO3 DD films, in contrast to about 100% for the BaZrO3 DD counterpart. In addition, lower α values from the Jc(H) ˜ H-α fitting were observed in the BaHfO3 DD films in a large θ range away from the H//c-axis. Since the two samples have comparable Jc values at H//c-axis, the improved isotropic pinning in BaHfO3 DD films confirms the theoretically predicted higher tunability of the BaHfO3 1D-APCs in APC/YBa2Cu3O7-δ nanocomposite films.

  14. Oxygen isotope effect in YBa2Cu3O7 prepared by burning YBa2Cu3 in 16O and 18O

    NASA Astrophysics Data System (ADS)

    Yvon, Pascal J.; Schwarz, R. B.; Pierce, C. B.; Bernardez, L.; Conners, A.; Meisenheimer, R.

    1989-04-01

    We prepared YBa2Cu3 powder by ball milling a 2:1 molar mixture of the intermetallics BaCu and CuY. We synthesized YBa2Cu3(16O)7-x and YBa2Cu3(18O)7-x by oxidizing the YBa2Cu3 powder in 16O and 18O. The 16O/18O ratios were determined by laser-ionization and sputtering-ionization mass spectroscopy. The YBa2Cu3(160)7-x sample had 99.8 at. %16O, and the YBa2Cu3(18O)7-x sample had 96.5 at. %18O. Susceptibility measurements of the superconducting transition temperature (Tc=91.7 K for 16O; half-point transition at 84 K show an isotope effect of 0.4+/-0.1 K.

  15. Studies of anisotropic in-plane aligned a-axis oriented YBa(2)Cu(3)O(7-x) thin films

    NASA Astrophysics Data System (ADS)

    Trajanovic, Zoran

    1997-12-01

    Due to their layered planar structure, cuprate oxide superconductors possess remarkable anisotropic properties which may be related to their high transition temperatures. In-plane aligned a-axis YBa2Cu3O7 (YBCO) films are good candidates for such anisotropic studies. Furthermore, the full advantage of favorable material characteristics can be then utilized in applications such as vertical SNS junctions with the leads along the b-direction of YBCO and other novel junction configurations. High quality, smooth, in-plane aligned films are obtained on (100) LaSrGaO4. Form x-ray data, the films show complete b- and c-axes separation for the measured a-axis orientation. The anisotropic resistivity ratio (ρ c/ρ b), measured along the two crystallographic axes of single films gives ρ c/ρ b of ≈20 near the transition, with T cs near 90 K. In such films the grain boundary effects can be decoupled from the intrinsic anisotropic properties of YBCO. From oxygen annealing studies it was estimated that the CuO chains supply about 60% of the carriers. From J c measurements it is determined that the orientation of magnetic field with respect to the crystallographic film axes is the primary factor governing the J c values. The angular dependence of J c on the applied magnetic field is compared against various theoretical models showing the best agreement with the modified Ginzburg-Landau's anisotropic mass model (at T ≈ T c) and Tinkham's thin film model (at T < T c). By utilizing the Co-dopant, the coupling between CuO2 planes and the resulting enhancement of the intrinsic anisotropy of YBCO can be studied. Deposition and cooling conditions are shown to be the primary factor that influence the quality of dopant incorporation and the resulting oxygen ordering within the YBCO lattice. Various complex structures and devices utilizing in-plane aligned, a-axis films are presented. Other materials exhibiting in-plane alignment and a-axis growth are described. Optional substrates

  16. Direct observation of vortex structure in a high-{Tc} YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} thin film by Bitter decoration method

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sugimoto, Akira; Yamaguchi, Tetsuji; Iguchi, Ienari

    1999-12-01

    The Bitter decoration technique is one of the most powerful techniques to study the vortex structure of superconductor. The authors report the observation of vortex structure in a high {Tc} YBa{sub 2}Cu{sub 3}O{sub 7{minus}y} (YBCO) thin film by Bitter decoration method. The image of vortex structure was monitored by SEM, AFM and high resolution optical microscope. For magnetic field about 4--6mT, a vortex structure is seen. The vortex image varied with changing magnetic field. As compared with the vortex image of a Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} single crystal, the observed image appeared to be more randomly distributed.

  17. Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor

    NASA Astrophysics Data System (ADS)

    Masterov, D. V.; Pavlov, S. A.; Parafin, A. E.

    2008-05-01

    High-frequency properties of resonant structures based on thin films of YBa2Cu3O7 δ high-temperature superconductor are studied experimentally in the frequency range 30 100 MHz. The structures planar induction coils with a self-capacitance fabricated on neodymium gallate and lanthanum aluminate substrates. The unloaded Q factor of the circuits exceeds 2 × 105 at 77 K and 40 MHz. Possible loss mechanisms that determine the Q factor of the superconducting resonant structures in the megahertz range are considered.

  18. Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

    NASA Astrophysics Data System (ADS)

    Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

    2018-07-01

    Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

  19. Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

    NASA Technical Reports Server (NTRS)

    Warner, J. D.; Bhasin, K. B.; Varaljay, N. C.; Bohman, D. Y.; Chorey, C. M.

    1989-01-01

    A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

  20. Calorimetric determination of the magnetic phase diagram of underdoped ortho II YBa2Cu3O6.54 single crystals

    PubMed Central

    Marcenat, C.; Demuer, A.; Beauvois, K.; Michon, B.; Grockowiak, A.; Liang, R.; Hardy, W.; Bonn, D. A.; Klein, T.

    2015-01-01

    The recent discovery of a charge order in underdoped YBa2Cu3Oy raised the question of the interplay between superconductivity and this competing phase. Understanding the normal state of high-temperature superconductors is now an essential step towards the description of the pairing mechanism in those materials and determining the upper critical field is therefore of fundamental importance. We present here a calorimetric determination of the field–temperature phase diagram in underdoped YBa2Cu3Oy single crystals. We show that the specific heat saturates in high magnetic fields. This saturation is consistent with a normal state without any significant superconducting contribution and a total Sommerfeld coefficient γN∼6.5±1.5 mJ mol−1 K−2 putting strong constraints on the theoretical models for the Fermi surface reconstruction. PMID:26294047

  1. The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Mogro-Campero, A.; Turner, L. G.; Bogorad, A.; Herschitz, R.

    1990-01-01

    The refrigeration of superconductors in space poses a challenging problem. The problem could be less severe if superconducting materials would not have to be cooled when not in use. Thin films of the YBa2Cu3O(7-x) (YBCO) superconductor were subjected to thermal cycling, which was carried out to simulate a large number of eclipses of a low earth orbit satellite. Electrical measurements were performed to find the effect of the temperature cycling. Thin films of YBCO were formed by coevaporation of Y, BaF2, and Cu and postannealing in wet oxygen at 850 C for 3.5 h. The substrates used were (100) SrTiO3, polycrystalline alumina, and oxidized silicon; the last two have an evaporated zirconia layer. Processing and microstructure studies of these types of films have been published. THe zero resistance transition temperatures of the samples used in this study were 91, 82, and 86 K, respectively. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were: the zero resistance transition temperature, the 10 to 90 percent transition width, and the room temperature resistance, normalized to that measured before temperature cycling. The results for two samples are presented. Each sample had a cumulative exposure. Cycling in atmospheric pressure nitrogen was performed at a rate of about 60 cycles per day, whereas in vacuum the rate was only about 10 cycles per day. The results indicate only little or no changes in the parameters measured. Degradation of superconducting thin films of YBCO has been reported due to storage in nitrogen. It is believed that the relatively good performance of films after temperature cycling is related to the fact that BaF2 was used as an evaporation source. The latest result on extended temperature cycling indicates significant degradation. Further tests of extended cycling will be carried out to provide additional data and to clarify this preliminary finding.

  2. Controlling particle properties in {{YBa}}_{2}{{Cu}}_{3}{{\\rm{O}}}_{7-\\delta } nanocomposites by combining PLD with an inert gas condensation system

    NASA Astrophysics Data System (ADS)

    Sparing, M.; Reich, E.; Hänisch, J.; Gottschall, T.; Hühne, R.; Fähler, S.; Rellinghaus, B.; Schultz, L.; Holzapfel, B.

    2017-10-01

    The critical current density {J}{{c}} in {{YBa}}2{{Cu}}3{{{O}}}7-δ thin films, which limits their application in external magnetic fields, can be enhanced by the introduction of artificial pinning centers such as non-superconducting nanoparticles inducing additional defects and local strain in the superconducting matrix. To understand the correlation between superconductivity, defect structures and particles, a controlled integration of particles with adjustable properties is essential. A powerful technique for the growth of isolated nanoparticles in the range of 10 nm is dc-magnetron sputtering in an inert gas flow. The inert gas condensation (IGC) of particles allows for an independent control of both the particle diameter distribution and the areal density. We report on the integration of such gas-phase-condensed {{HfO}}2 nanoparticles into pulsed laser deposited (PLD) {{YBa}}2{{Cu}}3{{{O}}}7-δ thin film multilayers with a combined PLD-IGC system. The particles and the structure of the multilayers are analyzed by transmission electron microscopy on cross-sectional FIB lamellae. As a result of the IGC particle implementation, randomly as well as biaxially oriented {{BaHfO}}3 precipitates are formed in the {{YBa}}2{{Cu}}3{{{O}}}7-δ thin films. With as few as three interlayers of nanoparticles, the pinning force density is enhanced in the low-field region.

  3. Millimeter wave transmission studies of YBa2Cu3O7-delta thin films in the 26.5 to 40.0 GHz frequency range

    NASA Technical Reports Server (NTRS)

    Miranda, F. A.; Gordon, W. L.; Bhasin, K. B.; Heinen, V. O.; Warner, J. D.; Valco, G. J.

    1989-01-01

    Millimeter wave transmission measurements through YBa2Cu3O(7-delta) thin films on MgO, ZrO2 and LaAlO3 substrates, are reported. The films (approx. 1 micron) were deposited by sequential evaporation and laser ablation techniques. Transition temperatures T sub c, ranging from 89.7 K for the Laser Ablated film on LaAlO3 to approximately 72 K for the sequentially evaporated film on MgO, were obtained. The values of the real and imaginary parts of the complex conductivity, sigma 1 and sigma 2, are obtained from the transmission data, assuming a two fluid model. The BCS approach is used to calculate values for an effective energy gap from the obtained values of sigma sub 1. A range of gap values from 2 DELTA o/K sub B T sub c = 4.19 to 4.35 was obtained. The magnetic penetration depth is evaluated from the deduced values of sigma 2. These results are discussed together with the frequency dependence of the normalized transmission amplitude, P/P sub c, below and above T sub c.

  4. Growth of ultrathin twin-free b-oriented YBa{sub 2}Cu{sub 3}O{sub 7} {sub –} {sub x} films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stepantsov, E. A., E-mail: stepantsov@ns.crys.ras.ru; Arpaia, R.; Lombardi, F.

    2017-01-15

    Twin-free b-oriented YBa{sub 2}Cu{sub 3}O{sub 7–x} films with a thickness less than 40 nm have been epitaxially grown on (100)SrLaGaO{sub 4} crystals. Based on the temperature dependence of resistance, the onset temperature of the transition to the superconducting state is found to be 90 K; the transition width is 4 K. The film growth has been performed in two stages. A (100)PrBa{sub 2}Cu{sub 3}O{sub 7–x} buffer layer was previously grown on a (100)SrLaGaO{sub 4} substrate by rf magnetron sputtering in an Ar–O{sub 2} gas mixture at a continuous and monotonic increase in temperature from 660 to 830°C. The main YBa{submore » 2}Cu{sub 3}O{sub 7–x} film was grown on the buffer layer surface by pulsed laser deposition in an oxygen medium at a fixed temperature (800°C). The above processes were implemented in different chambers, which were connected by a vacuum channel for transporting samples. Both films were grown in situ, without contacting atmosphere in all growth stages. An X-ray diffraction study has shown that the YBa{sub 2}Cu{sub 3}O{sub 7–x} films are single-crystal and free of precipitates of other phases and domains of other orientations.« less

  5. Strongly suppressed proximity effect and ferromagnetism in topological insulator/ferromagnet/superconductor thin film trilayers of Bi2Se3/SrRuO3/underdoped YBa2Cu3O x : a possible new platform for Majorana nano-electronics

    NASA Astrophysics Data System (ADS)

    Koren, Gad

    2018-07-01

    We report properties of a topological insulator–ferromagnet–superconductor trilayers comprised of thin films of 20 nm thick {Bi}}2{Se}}3 on 10 nm SrRuO3 on 30 nm {YBa}}2{Cu}}3{{{O}}}x. As deposited trilayers are underdoped and have a superconductive transition with {{T}}{{c}} onset at 75 K, zero resistance at 65 K, {{T}}Cueri} at 150 K and {{T}}* of about 200 K. Further reannealing under vacuum yields the 60 K phase of {YBa}}2{Cu}}3{{{O}}}x which still has zero resistance below about 40 K. Only when 10 × 100 microbridges were patterned in the trilayer, some of the bridges showed resistive behavior all the way down to low temperatures. Magnetoresistance versus temperature of the superconductive ones showed the typical peak due to flux flow against pinning below {{T}}{{c}}, while the resistive ones showed only the broad leading edge of such a peak. All this indicates clearly weak-link superconductivity in the resistive bridges between superconductive {YBa}}2{Cu}}3{{{O}}}x grains via the topological and ferromagnetic cap layers. Comparing our results to those of a reference trilayer (RTL) with the topological {Bi}}2{Se}}3 layer substituted by a non-superconducting highly overdoped {La}}1.65{Sr}}0.35{CuO}}4, indicates that the superconductive proximity effect as well as ferromagnetism in the topological trilayer are actually strongly suppressed compared to the non-topological RTL. This strong suppression could originate in lattice and Fermi levels mismatch as well as in short coherence length and unfavorable effects of strong spin–orbit coupling in {Bi}}2{Se}}3 on the d-wave pairing of {YBa}}2{Cu}}3{{{O}}}x. Proximity induced edge currents in the SRO/YBCO layer could lead to Majorana bound states, a possible signature of which is observed in the present study as zero bias conductance peaks.

  6. Microscopic adaptation of BaHfO3 and Y2O3 artificial pinning centers for strong and isotropic pinning landscape in YBa2Cu3O7-x thin films

    NASA Astrophysics Data System (ADS)

    Gautam, Bibek; Sebastian, Mary Ann; Chen, Shihong; Haugan, Timothy; Zhang, Wenrui; Huang, Jijie; Wang, Haiyan; Wu, Judy Z.

    2018-07-01

    A study of 3 vol% Y2O3 + 2-6 vol% BaHfO3 double-doped YBa2Cu3O7-x (BHO DD) epitaxial thin films was carried out to explore the morphology adaption of c-axis aligned one-dimensional BHO artificial pinning centers (1D APCs) to secondary Y2O3 nanoparticles (3D APCs). BHO 1D APCs have been predicted to have the least rigidity in an elastic strain energy model in APC/YBa2Cu3O7-x nanocomposite films. Consequently, they could be best ‘tuned’ away from the c-axis alignment by local strains generated by the Y2O3 3D APCs. This provides an opportunity to generate mixed-morphology APCs, especially at high BHO concentrations. Motivated by this, we have carried out a systematic study of the transport critical current density J c(H, T, θ) on the BHO DD samples in magnetic fields (H) up to 90 kOe at different H orientations from H//c-axis (θ = 0), to θ = 45°, and to H//ab-plane (θ = 90°). Enhanced pinning at all three orientations was observed as illustrated in the comparable low alpha (α) values in the range of 0.13-0.25 at 65 K, which is consistent with the mixed 1D (in c-axis) + 2D (in ab-plane) + 3D APCs observed in transmission electron microscopy (TEM). Upon increasing BHO concentration from 2 to 4 vol%, a monotonic increase of the accommodation field H* at θ = 0°, 45° and 90° was observed, indicative of the APC concentration increase of the mixed morphologies. At 6 vol% BHO, the H* continues the increase to 85 kOe at H//c-axis (θ = 0), and >90 kOe H//ab-plane (θ = 90°), while it decreases from 80 to 85 kOe at 2-4 vol% to 60 kOe at 6 vol% at θ = 45°, which is consistent with the TEM observation of the connection of 3D APCs, appeared at lower BHO concentration into 2D ones in ab-plane at the higher BHO concentrations. These results shed light on the quantitative adaptation of APCs of mixed morphologies with increasing BHO doping in the BHO DD thin films and are important for controlling the APC pinning landscape towards minimal angular dependence.

  7. Thermodynamic evidence for a nematic phase transition at the onset of the pseudogap in YBa2Cu3Oy

    NASA Astrophysics Data System (ADS)

    Sato, Y.; Kasahara, S.; Murayama, H.; Kasahara, Y.; Moon, E.-G.; Nishizaki, T.; Loew, T.; Porras, J.; Keimer, B.; Shibauchi, T.; Matsuda, Y.

    2017-11-01

    A long-standing controversial issue in the quest to understand the superconductivity in cuprates is the nature of the enigmatic pseudogap region of the phase diagram. Especially important is whether the pseudogap state is a distinct thermodynamic phase characterized by broken symmetries below the onset temperature T*. Here we report torque-magnetometry measurements of anisotropic susceptibility within the ab planes in orthorhombic YBa2Cu3Oy with exceptionally high precision. The in-plane anisotropy displays a significant increase with a distinct kink at the pseudogap onset temperature T*, showing a remarkable scaling behaviour with respect to T/T* in a wide doping range. Our systematic analysis reveals that the rotational symmetry breaking sets in at T* in the limit where the effect of orthorhombicity is eliminated. These results provide thermodynamic evidence that the pseudogap onset is associated with a second-order nematic phase transition, which differs from the recently reported charge-density-wave transition that accompanies translational symmetry breaking.

  8. Study of deposition of YBa2Cu3O7-x on cubic zirconia

    NASA Technical Reports Server (NTRS)

    Warner, Joseph D.; Meola, Joseph E.; Jenkins, Kimberly A.

    1989-01-01

    Films of YBa2Cu3O7-x were grown on (100) cubic zirconia with 8 percent yttria by laser ablation from sintered targets of YBa2Cu3O7-x. The temperature of the zirconia substrate during growth was varied between 700 and 780 C. The atmosphere during growth was 170 mtorr of O2. The films were subsequently slowly cooled in-situ in 1 atm of O2. The best films were c-axis aligned and had a transition temperature of 87.7 K. The superconducting transition temperature and the X-ray diffraction analysis is reported as a function of the substrate temperature and of the angle between the laser beam and the target's normal.

  9. Structural transition of secondary phase oxide nanorods in epitaxial YBa2Cu3O7-δ films on vicinal substrates

    NASA Astrophysics Data System (ADS)

    Shi, Jack J.; Wu, Judy Z.

    2012-12-01

    A theoretical study of a structural transition of secondary phase oxide nanorods in epitaxial YBa2Cu3O7-δ films on vicinal SrTiO3 substrates is presented. Two possible types of film/substrate interface are considered, with one assuming complete coherence, while the other is defective as manifested by the presence of antiphase grain boundaries. Only in the former case does the increase of the vicinal angle of the substrate lead to a substantial change of the strain field in the film, resulting in a transition of the nanorod orientation from the normal to the in-plane direction of the film. The calculated threshold vicinal angle for the onset of the transition and lattice deformation of the YBa2Cu3O7-δ film due to the inclusion of the nanorods is in very good agreement with experimental observations. This result sheds lights on the understanding of the role of the film/substrate lattice mismatch in controlling self-assembly of dopant nanostructures in matrix films.

  10. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  11. Ultrafast relaxation dynamics in BiFeO 3/YBa 2Cu 3O 7 bilayers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Springer, D.; Nair, Saritha K.; He, Mi

    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO 3 (BFO) and superconducting YBa 2Cu 3O 7 (YBCO) grown on (001) SrTiO 3 substrate is studied by time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCOinterface as observed inmagnetization data. An extensionmore » of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.« less

  12. Ultrafast relaxation dynamics in BiFeO 3/YBa 2Cu 3O 7 bilayers

    DOE PAGES

    Springer, D.; Nair, Saritha K.; He, Mi; ...

    2016-02-12

    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO 3 (BFO) and superconducting YBa 2Cu 3O 7 (YBCO) grown on (001) SrTiO 3 substrate is studied by time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCOinterface as observed inmagnetization data. An extensionmore » of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.« less

  13. Crystal growth of YBa2Cu3O(7-x) and reaction of gold crucible with Ba-Cu-rich flux

    NASA Technical Reports Server (NTRS)

    Tao, Y. K.; Chen, H. C.; Martini, L.; Bechtold, J.; Huang, Z. J.; Hor, P. H.

    1991-01-01

    YBa2Cu3O(7-x) crystals are grown in a gold crucible by a self-flux method. The flux moves along the gold surface due to surface wetting and leaves Y123 crystals behind. The obtained crystals are clean and have a size up to two millimeters and a Tc is greater than 90 K. In an effort to recycle the used crucibles, it is found that the used gold is contaminated by copper. A CuO thin film is easily formed on the surface of the crucible that is made of the used gold. This film provides good surface wetting and a buffer layer, which reduces the reaction between gold and the Y-Ba-Cu-oxide melt.

  14. Analysis of low-field isotropic vortex glass containing vortex groups in YBa2Cu3O7−x thin films visualized by scanning SQUID microscopy

    PubMed Central

    Wells, Frederick S.; Pan, Alexey V.; Wang, X. Renshaw; Fedoseev, Sergey A.; Hilgenkamp, Hans

    2015-01-01

    The glass-like vortex distribution in pulsed laser deposited YBa2Cu3O7 − x thin films is observed by scanning superconducting quantum interference device microscopy and analysed for ordering after cooling in magnetic fields significantly smaller than the Earth's field. Autocorrelation calculations on this distribution show a weak short-range positional order, while Delaunay triangulation shows a near-complete lack of orientational order. The distribution of these vortices is finally characterised as an isotropic vortex glass. Abnormally closely spaced groups of vortices, which are statistically unlikely to occur, are observed above a threshold magnetic field. The origin of these groups is discussed, but will require further investigation. PMID:25728772

  15. Atomic and electronic structures of BaHfO3-doped TFA-MOD-derived YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Molina-Luna, Leopoldo; Duerrschnabel, Michael; Turner, Stuart; Erbe, Manuela; Martinez, Gerardo T.; Van Aert, Sandra; Holzapfel, Bernhard; Van Tendeloo, Gustaaf

    2015-11-01

    Tailoring the properties of oxide-based nanocomposites is of great importance for a wide range of materials relevant for energy technology. YBa2Cu3O7-δ (YBCO) superconducting thin films containing nanosized BaHfO3 (BHO) particles yield a significant improvement of the magnetic flux pinning properties and a reduced anisotropy of the critical current density. These films were prepared by chemical solution deposition (CSD) on (100) SrTiO3 (STO) substrates yielding critical current densities up to 3.6 MA cm-2 at 77 K and self-field. Transport in-field J c measurements demonstrated a high pinning force maximum of around 6 GN/m3 for a sample annealed at T = 760 °C that has a doping of 12 mol% of BHO. This sample was investigated by scanning transmission electron microscopy (STEM) in combination with electron energy-loss spectroscopy (EELS) yielding strain and spectral maps. Spherical BHO nanoparticles of 15 nm in size were found in the matrix, whereas the particles at the interface were flat. A 2 nm diffusion layer containing Ti was found at the YBCO (BHO)/STO interface. Local lattice deformation mapping at the atomic scale revealed crystal defects induced by the presence of both sorts of BHO nanoparticles, which can act as pinning centers for magnetic flux lines. Two types of local lattice defects were identified and imaged: (i) misfit edge dislocations and (ii) Ba-Cu-Cu-Ba stacking faults (Y-248 intergrowths). The local electronic structure and charge transfer were probed by high energy resolution monochromated electron energy-loss spectroscopy. This technique made it possible to distinguish superconducting from non-superconducting areas in nanocomposite samples with atomic resolution in real space, allowing the identification of local pinning sites on the order of the coherence length of YBCO (˜1.5 nm) and the determination of 0.25 nm dislocation cores.

  16. Large pinning forces and matching effects in YBa2Cu3O7-δ thin films with Ba2Y(Nb/Ta)O6 nano-precipitates

    PubMed Central

    Opherden, Lars; Sieger, Max; Pahlke, Patrick; Hühne, Ruben; Schultz, Ludwig; Meledin, Alexander; Van Tendeloo, Gustaaf; Nast, Rainer; Holzapfel, Bernhard; Bianchetti, Marco; MacManus-Driscoll, Judith L.; Hänisch, Jens

    2016-01-01

    The addition of mixed double perovskite Ba2Y(Nb/Ta)O6 (BYNTO) to YBa2Cu3O7−δ (YBCO) thin films leads to a large improvement of the in-field current carrying capability. For low deposition rates, BYNTO grows as well-oriented, densely distributed nanocolumns. We achieved a pinning force density of 25 GN/m3 at 77 K at a matching field of 2.3 T, which is among the highest values reported for YBCO. The anisotropy of the critical current density shows a complex behavior whereby additional maxima are developed at field dependent angles. This is caused by a matching effect of the magnetic fields c-axis component. The exponent N of the current-voltage characteristics (inversely proportional to the creep rate S) allows the depinning mechanism to be determined. It changes from a double-kink excitation below the matching field to pinning-potential-determined creep above it. PMID:26887291

  17. Large pinning forces and matching effects in YBa2Cu3O7-δ thin films with Ba2Y(Nb/Ta)O6 nano-precipitates

    NASA Astrophysics Data System (ADS)

    Opherden, Lars; Sieger, Max; Pahlke, Patrick; Hühne, Ruben; Schultz, Ludwig; Meledin, Alexander; van Tendeloo, Gustaaf; Nast, Rainer; Holzapfel, Bernhard; Bianchetti, Marco; MacManus-Driscoll, Judith L.; Hänisch, Jens

    2016-02-01

    The addition of mixed double perovskite Ba2Y(Nb/Ta)O6 (BYNTO) to YBa2Cu3O7-δ (YBCO) thin films leads to a large improvement of the in-field current carrying capability. For low deposition rates, BYNTO grows as well-oriented, densely distributed nanocolumns. We achieved a pinning force density of 25 GN/m3 at 77 K at a matching field of 2.3 T, which is among the highest values reported for YBCO. The anisotropy of the critical current density shows a complex behavior whereby additional maxima are developed at field dependent angles. This is caused by a matching effect of the magnetic fields c-axis component. The exponent N of the current-voltage characteristics (inversely proportional to the creep rate S) allows the depinning mechanism to be determined. It changes from a double-kink excitation below the matching field to pinning-potential-determined creep above it.

  18. Chemical nature of the barrier in Pb/YBa2Cu3O(7-x) tunneling structures

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Foote, M. C.; Hunt, B. D.; Bajuk, L.

    1991-01-01

    Several reports of reproducible tunneling measurements on YBa2Cu3O(7-x) thin films or single crystals with a Pb counterelectrode have recently appeared. The nature of the tunnel barrier, formed by air exposure, in these structures has been unknown. In the present work, the chemical nature of the tunnel barrier is studied with X-ray photoelectron spectroscopy (XPS). Laser-ablated films grown on LaAlO3 which have been chemically etched and heated in air are found to form nonsuperconducting surface Ba species, evident in an increase of the high binding energy Ba 3d and O 1s signals. A deposited Pb film about 10 A thick is found to be oxidized, and Cu(+2) is partially reduced to Cu(+1). The tunneling barrier thus appears to consist of species resulting from a combination of the air exposure and a reaction between the superconductor and the deposited Pb counterelectrode.

  19. Millimeter-wave surface resistance of laser-ablated YBa2Cu3O(7-delta) superconducting films

    NASA Technical Reports Server (NTRS)

    Miranda, F. A.; Gordon, W. L.; Bhasin, K. B.; Warner, J. D.

    1990-01-01

    The millimeter-wave surface resistance of YBa2Cu3O(7-delta) superconducting films was measured in a gold-plated copper host cavity at 58.6 GHz between 25 and 300 K. High-quality laser-ablated films of 1.2-micron thickness were deposited on SrTiO3 and LaGaO3 substrates. Their transition temperatures were 90.0 and 88.9 K, with a surface resistance at 70 K of 82 and 116 milliohms, respectively. These values are better than the values for the gold-plated cavity at the same temperature and frequency.

  20. Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

    DTIC Science & Technology

    2010-03-01

    protective layer was deposited on the top of YBCNO film by dc sputtering . A 200 nm 200 nm area film was selected and cut with a Ga ion beam (30 kV...200 TEM at 200 kV. Samples for TEM were prepared using a focused ion beam (FIB (Eindhoven, The Netherlands)) microscope. For TEM examination, a thin Pt...by dc magnetron sputtering deposition of Ag with 93 mm thickness. Transport current measurements were made in liquid nitrogen with the 4-probe method

  1. Ten Ghz YBa2Cu3O(7-Delta) Superconducting Ring Resonators on NdGaO3 Substrates

    NASA Technical Reports Server (NTRS)

    To, H. Y.; Valco, G. J.; Bhasin, K. B.

    1993-01-01

    YBa2Cu3O(7-delta) thin films were formed on NdGaO3 substrates by laser ablation. Critical temperatures greater than 89 K and critical current densities exceeding 2 x 10(exp 8) Acm(sub -2) at 77 K were obtained. The microwave performance of films patterned into microstrip ring resonators with gold ground planes was measured. An unloaded quality factor six times larger than that of a gold resonator of identical geometry was achieved. The unloaded quality factor decreased below 70 K for both the superconducting and gold resonators due to increasing dielectric losses in the substrate. The temperature dependence of the loss tangent of NdGaO3 was extracted from the measurements.

  2. Improved epitaxial texture of thick YBa2Cu3O7-δ/GdBa2Cu3O7-δ films with periodic stress releasing

    NASA Astrophysics Data System (ADS)

    Lin, Jianxin; Yang, Wentao; Gu, Zhaohui; Shu, Gangqiang; Li, Minjuan; Sang, Lina; Guo, Yanqun; Liu, Zhiyong; Cai, Chuanbing

    2015-04-01

    Thick high-Tc superconducting films consisting of a YBa2Cu3O7-δ/GdBa2Cu3O7-δ periodic architecture are developed on oxid-buffered Hastelloy tapes using a pulsed laser deposition process. It is revealed that multilayer intermittent structures for superconducting layers are effective to avoid the presence of a-axis grains and microcracks that occur with increasing thickness, which are frequently observed in monolayer films of REBa2Cu3O7-δ (RE = Y, Gd, or other rare earths), such grains and cracks being the significant challenge for obtaining high critical current in coated conductors. Presently, the thicknesses of multilayer films vary from 0.5 μm to 3 μm and, based on the SEM images and x-ray φ-scans, hardly show the influences on the microstructures and grain orientation of the c-axis. Also, the characteristic Raman spectrum patterns and their shifting with increasing the thickness of YBCO/GdBCO imply that the superior texture is obtained due to the evolution of stress dominated by the compressive stress rather than tensile stress.

  3. Detection and imaging of the oxygen deficiency in single crystalline YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films using a scanning positron beam

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Reiner, M.; Gigl, T.; Hugenschmidt, C.

    2015-03-16

    Single crystalline YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) thin films were grown by pulsed laser deposition in order to probe the oxygen deficiency δ using a mono-energetic positron beam. The sample set covered a large range of δ (0.191 < δ < 0.791) yielding a variation of the critical temperature T{sub c} between 25 and 90 K. We found a linear correlation between the Doppler broadening of the positron electron annihilation line and δ determined by X-ray diffraction. Ab-initio calculations have been performed in order to exclude the presence of Y vacancies and to ensure the negligible influence of potentially present Ba or Cu vacancies tomore » the found correlation. Moreover, scanning with the positron beam allowed us to analyze the spatial variation of δ, which was found to fluctuate with a standard deviation of up to 0.079(5) within a single YBCO film.« less

  4. Effectiveness of BaTiO 3 dielectric patches on YBa 2Cu 3O 7 thin films for MEM switches

    DOE PAGES

    Vargas, J.; Hijazi, Y.; Noel, J.; ...

    2014-05-12

    A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO 3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO 3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO 3 layer. The effect examination of surface morphology will be presented using characterization techniquesmore » as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa 2Cu 3O 7 deposited on LaAlO 3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10 -6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO 3 patches will be shown as part of the results. These novel surface patterns will in turn be used in modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.« less

  5. Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Sieg, R. E.; Warner, J. D.; Stan, M. A.; Vitta, S.

    1990-01-01

    High temperature superconducting films of YBa2Cu3O(7-x) (YBCO were grown on SrTiO3, LaA1O3, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R=O)=90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaported films was much lower than the value reported for single crystals, and was sample dependent.

  6. High performance batch production of LREBa 2Cu 3O y using novel thin film Nd-123 seed

    NASA Astrophysics Data System (ADS)

    Muralidhar, M.; Suzuki, K.; Fukumoto, Y.; Ishihara, A.; Tomita, M.

    2011-11-01

    A batch production for fabrication of LREBa2Cu3Oy (LRE: Sm, Gd, NEG) "LRE-123" pellets are developed in air and Ar-1% O2 using a novel thin film Nd-123 seeds grown on MgO crystals. The SEM and XRD results conformed that the quality and orientation of the seed crystals are excellent. On the other hand, new seeds can withstand temperatures >1100 °C, as a result, the cold seeding process was applied even to grow Sm-123 material in Air. The trapped field observed in the best 45 mm single-grain puck of Gd-123 was in the range of 1.35 T and 0.35 T at 77.3 K and 87.3 K, respectively. The average trapped field at 77.3 K in the 24 mm diameter NEG-123 samples batch lies between 0.9 and 1 T. The maximum trapped field of 1.2 T was recorded at the sample surface. Further, the maximum trapped field of 0.23 T at 77 K was recorded in a sample with 16 mm diameter of Sm-123 with 3 mol% BaO2 addition. As a result we made more then 130 single grain pucks within a couple of months. Taking advantage of the single grain batch processed material, we constructed self-made chilled levitation disk, which was used on the open day of railway technical research Institute. More then 150 children stood on the levitation disk and revel the experience of levitation. The present results prove that a high-performance good-quality class of LREBa2Cu3Oy material can be made by using a novel thin film Nd-123 seeds.

  7. Geometric and compositional factors on critical current density in YBa2Cu3O7‑δ films containing nanorods

    NASA Astrophysics Data System (ADS)

    Horide, Tomoya; Nagao, Sho; Izutsu, Ryosuke; Ishimaru, Manabu; Kita, Ryusuke; Matsumoto, Kaname

    2018-06-01

    Critical current density (J c) was investigated in YBa2Cu3O7‑δ films containing nanorods prepared with various nanorod materials, with variation of nanorod content, substrate temperature, and oxidization condition. Three types of compositional situation were realized: films containing strain induced oxygen vacancies; fully oxidized films containing cation compositional deviation; and oxygen deficient films. Normalized J c‑B behavior was determined via the matching field, which is a geometric factor, regardless of the compositional details. A J c‑critical temperature (T c) relation depending on distribution and fraction of compositional deviation (cation compositional deviation and strain induced oxygen vacancies) was found: the J c values decreased with decreasing T c due to the effect of T c on nanorod pinning strength in the fully oxidized films; J c decreased with decreasing oxygen pressure in the film cooling process after film deposition in spite of T c remaining almost the same, due to reduction of the effective area for current flow in the oxygen deficient films. Thus, a J c landscape based on geometric and compositional factors was obtained. The study highlights the importance of the J c‑T c analysis in the understanding of J c in YBa2Cu3O7‑δ films containing nanorods.

  8. Epitaxial YBa2Cu3O7-x nanocomposite films and coated conductors from BaMO3 (M = Zr, Hf) colloidal solutions

    NASA Astrophysics Data System (ADS)

    Obradors, X.; Puig, T.; Li, Z.; Pop, C.; Mundet, B.; Chamorro, N.; Vallés, F.; Coll, M.; Ricart, S.; Vallejo, B.; Pino, F.; Palau, A.; Gázquez, J.; Ros, J.; Usoskin, A.

    2018-04-01

    Superconducting nanocomposites are the best material choice to address the performance required in power applications and magnets working under high magnetic fields. However, it is still challenging to sort out how to achieve the highest superconducting performance using attractive and competitive manufacturing processes. Colloidal solutions have been recently developed as a novel and very promising low cost route to manufacture nanocomposite coated conductors. Well dispersed and stabilized preformance nanoparticle solutions are first prepared with high concentrations and then mixed with the YBa2Cu3O7 metalorganic precursor solutions to generate colloidal solutions to grow the nanocomposite films. Here we demonstrate, for the first time, that non-reactive BaZrO3 and BaHfO3 perovskite preformed nanoparticles are suitable for growing high quality thin and thick films, and coated conductors with a homogeneous distribution and controlled particle size using this fabrication method. Additionally, we extend the nanoparticle content of the nanocomposites up to 20%-25% mol without any degradation of the superconducting properties. Thick nanocomposite films, up to 0.8 μm, have been prepared with a single deposition of low-fluorine solutions using an ink jet printing dispenser and we demonstrate that the preformed nanoparticles display only a very limited coarsening during the growth process and so high critical current densities J c (B) under high magnetic fields. These films show the highest critical currents achieved so far based on the colloidal solution approach, I c = 220 A/cm-w at 77 K and self-field, and they still have a high potential for further increase in the film thickness. Finally, we also show that nanocomposite YBa2Cu3O7-BaZrO3 coated conductors based on an alternating beam assisted deposited YSZ buffer layer on stainless steel metallic substrates can be developed based on these novel colloidal solutions. Non-reactive preformed oxide perovskite

  9. Flux pinning enhancement in thin films of Y3 Ba5 Cu8O18.5 + d

    NASA Astrophysics Data System (ADS)

    Aghabagheri, S.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.

    2018-06-01

    YBa2Cu3O7 (Y123) and Y3Ba5Cu8O18 (Y358) thin films were deposited by pulsed laser deposition method. XRD analysis shows both films grow in c axis orientation. Resistivity versus temperature analysis shows superconducting transition temperature was about 91.2 K and 91.5 K and transition width for Y358 and Y123 films was about 0.6 K and 1.6 K, respectively. Analysis of the temperature dependence of the AC susceptibility near the transition temperature, employing Bean's critical state model, indicates that intergranular critical current density for Y358 films is more than twice of intergranular critical current density of Y123 films. Thus, flux pining is stronger in Y358 films. Weak links in the both samples is of superconductor-normal-superconductor (SNS) type irrespective of stoichiometry.

  10. Impact of oxygen diffusion on superconductivity in YBa2Cu3O7 -δ thin films studied by positron annihilation spectroscopy

    NASA Astrophysics Data System (ADS)

    Reiner, M.; Gigl, T.; Jany, R.; Hammerl, G.; Hugenschmidt, C.

    2018-04-01

    The oxygen deficiency δ in YBa2Cu3O7 -δ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We apply (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line to study in situ the temperature dependence of the oxygen concentration and its depth profile in single crystalline YBCO film grown on SrTiO3 (STO) substrates. The oxygen diffusion during tempering is found to lead to a distinct depth dependence of δ , which is not accessible using x-ray diffraction. A steady state reached within a few minutes is defined by both, the oxygen exchange at the surface and at the interface to the STO substrate. Moreover, we reveal the depth-dependent critical temperature Tc in the as prepared and tempered YBCO film.

  11. Flux Pinning Enhancement in YBa2Cu3O7-x Films for Coated Conductor Applications (Postprint)

    DTIC Science & Technology

    2010-01-01

    YBa2Cu3O7–x Films for Coated Conductor Applications Maiorov , B. , Civale , L. , Lin , Y. , Hawley , M.E. , Maley , M.P. , and Peterson , D.E...L. , Maiorov , B. , Hawley , M.E. , Maley , M.P. , and Peterson , D.E. ( 2004 ) Nat. Mater. , 3 , 439 . 30 Kang , S. , Goyal...1864 . 47 Civale , L. , Maiorov , B. , Serquis , A. , Willis , J.O. , Coulter , J.Y. , Wang , H. , Jia , Q.X. , Arendt , P.N

  12. Defect ordering in YBa 2Cu 3O 6.5 and YBa 2Cu 3O 6.6: Synthesis and characterization by neutron and electron diffraction

    NASA Astrophysics Data System (ADS)

    Lin, Y. P.; Greedan, J. E.; O'Reilly, A. H.; Reimers, J. N.; Stager, C. V.; Post, M. L.

    1990-02-01

    Polycrystalline samples of YBa 2Cu 3O 6.5 and YBa 2Cu 3O 6.6 were prepared by oxygen titration of YBa 2 Cu 3O 6.0 at 450°C followed by slow cooling to room temperature. Both samples showed evidence for the a' = 2a supercell in individual grains by electron diffraction as reported previously. In addition the superlattice was observed in neutron powder diffraction indicating that the bulk material is also well ordered. In this study the YBa 2Cu 3O 6.6 phase showed longer correlation lengths for ordering along both a* and b* than YBa 2Cu 3O 6.5. For the former compound the powder-averaged, sample-averaged a* correlation distance is 26A˚from neutron diffraction. Analysis of electron diffraction profiles on selected single crystals give correlation lengths along a*, b*, and c* of 100, 200, and 50A˚, respectively. Dark field imaging discloses the presence of striped, ordered domains elongated along b* with a distribution of sizes. Both neutron diffraction and dark field imaging indicate that the volume fraction of the ordered domains is about 50%. A correlation is noted between the Meissner Effect and the extent of defect ordering in the bulk samples of the two phases.

  13. Preparation and characterization of Cu2SnS3 thin films by electrodeposition

    NASA Astrophysics Data System (ADS)

    Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

    2018-05-01

    Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

  14. Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

    NASA Astrophysics Data System (ADS)

    Chechenin, N. G.; Chernysh, A. V.; Korneev, V. V.; Monakhov, E. V.; Seleznev, B. V.

    1993-12-01

    Pulsed (~20 ns) laser effects in epitaxial YBa2CU3Ox/SrTiO3 thin films were investigated, using RBS/channeling for compositional and structural characterization and 4-point technique for electrical measurements. It was found that laser pulse melting and following quenching lead to a transition from a single-crystalline to a polycrystalline state in films. The formation of grain boundaries causes a room temperature electrical resistivity increase by a factor 10-40, depending on the initial film properties and on the irradiation conditions. Unlike corpuscular (ions, neutrons) irradiation, the laser pulse induced structural damage did not lead to the disappearance of HTS, which persisted up to the highest laser fluences used. It was found, that a thermal model can consistently describe the fluence dependence of disorder, depth of surface relief and helps, with a simple two-layer model, in understanding of fluence dependence of room temperature resistivity in a relatively thick film. Les effects de pulses laser (~20 ns) sur des films minces épitaxiés d'YBa2Cu3Ox/SrTiO3 ont été étudiés par rétrodiffusion Rutherford et canalisation afin de caractériser leur composition et leur structure et à l'aide de la technique des 4 points pour les mesures électriques. On a trouvé que la fusion par pulse laser suivie par une trempe entraîne une transition d'un film monocristallin vers un film polycristallin. La formation de joints de grains s'accompagne d'une augmentation d'un facteur 10-40, de la résistivité électrique à température ambiante, dépendante des propriétés initiales du film et des conditions d'irradiation. Contrairement à l'irradiation corpusculaire (ions, neutrons) l'endommagement produit par la pulse laser n'entraîne pas la disparition de la superconductivité à haute température (HTS), qui persiste jusqu'aux plus hautes doses utilisées. On a trouvé qu'un modèle thermique peut décrire de façon consistante, la profondeur de la rugosité de

  15. Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

    NASA Astrophysics Data System (ADS)

    Blinova, Yu. V.; Snigirev, O. V.; Porokhov, N. V.; Evlashin, S. A.

    2017-10-01

    Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.

  16. Secondary ion mass spectroscopy study of Au trapping and migration in the Au-irradiated YBa2Cu3O7 - delta film

    NASA Astrophysics Data System (ADS)

    Li, Yupu; Kilner, J. A.; Liu, J. R.; Chu, W. K.; Wagner, G. A.; Somekh, R. E.

    1996-05-01

    The range data and migration of Au in YBa2Cu3O7-δ film were studied with implanted 197Au (1.5 MeV 5×1015 Au+/cm2) as a tracer. The film was a c-axis oriented film, ˜750 nm thick, deposited by high-pressure planar dc sputtering on <100> LaAlO3. Analysis by secondary ion mass spectroscopy shows that the as-implanted Au concentration distribution is essentially Gaussian-like and the depth (R̂p) of maximum Au concentration (˜1.2 wt %) is 201 nm. The projected range (R¯p) and (R̂p) are found to be in very good agreement with the simulated data by TRIM-95, whereas the measured ``straggle'' (ΔRp*) is about 20% larger than that by TRIM-95 simulation. It has also been found that the implanted 197Au starts to migrate within the film at a temperature between 650 and 700 °C, which is much higher than that for the implanted 2H (˜175 °C) and the implanted 18O (between 250 and 300 °C) in c-oriented YBa2Cu3O7-δ films.

  17. Anisotropy of the Seebeck Coefficient in the Cuprate Superconductor YBa2 Cu3 Oy : Fermi-Surface Reconstruction by Bidirectional Charge Order

    NASA Astrophysics Data System (ADS)

    Cyr-Choinière, O.; Badoux, S.; Grissonnanche, G.; Michon, B.; Afshar, S. A. A.; Fortier, S.; LeBoeuf, D.; Graf, D.; Day, J.; Bonn, D. A.; Hardy, W. N.; Liang, R.; Doiron-Leyraud, N.; Taillefer, Louis

    2017-07-01

    The Seebeck coefficient S of the cuprate YBa2 Cu3 Oy is measured in magnetic fields large enough to suppress superconductivity, at hole dopings p =0.11 and p =0.12 , for heat currents along the a and b directions of the orthorhombic crystal structure. For both directions, S /T decreases and becomes negative at low temperature, a signature that the Fermi surface undergoes a reconstruction due to broken translational symmetry. Above a clear threshold field, a strong new feature appears in Sb, for conduction along the b axis only. We attribute this feature to the onset of 3D-coherent unidirectional charge-density-wave modulations seen by x-ray diffraction, also along the b axis only. Because these modulations have a sharp onset temperature well below the temperature where S /T starts to drop towards negative values, we infer that they are not the cause of Fermi-surface reconstruction. Instead, the reconstruction must be caused by the quasi-2D bidirectional modulations that develop at significantly higher temperature. The unidirectional order only confers an additional anisotropy to the already reconstructed Fermi surface, also manifest as an in-plane anisotropy of the resistivity.

  18. Flux Pinning Enhancement in YBa2Cu3O7-x Films with BaSnO3 Nanoparticles

    DTIC Science & Technology

    2008-10-01

    SUPERCONDUCTOR SCIENCE AND TECHNOLOGY Supercond. Sci. Technol. 19 (2006) L37 –L41 doi:10.1088/0953-2048/19/10/L01 RAPID COMMUNICATION Flux pinning enhancement in...2006 Online at stacks.iop.org/SUST/19/ L37 Abstract Nanoparticles of BaSnO3 were incorporated into YBa2Cu3O7−x (YBCO) films on LaAlO3 substrates for...0953-2048/06/100037+05$30.00 © 2006 IOP Publishing Ltd Printed in the UK L37 1 Rapid Communication materials and sintered together to form a composite

  19. Thermal conversion of Cu4O3 into CuO and Cu2O and the electrical properties of magnetron sputtered Cu4O3 thin films

    NASA Astrophysics Data System (ADS)

    Murali, Dhanya S.; Aryasomayajula, Subrahmanyam

    2018-03-01

    Among the three oxides of copper (CuO, Cu2O, and Cu4O3), Cu4O3 phase (paramelaconite is a natural, and very scarce mineral) is very difficult to synthesize. It contains copper in both + 1 and + 2 valence states, with an average composition Cu2 1+Cu2 2+O3. We have successfully synthesized Cu4O3 phase at room temperature (300 K) by reactive DC magnetron sputtering by controlling the oxygen flow rate (Murali and Subrahmanyam in J Phys D Appl Phys 49:375102, 2016). In the present communication, Cu4O3 thin films are converted to CuO phases by annealing in the air at 680 K and to Cu2O phase when annealed in argon at 720 K; these phase changes are confirmed by temperature-dependent Raman spectroscopy studies. Probably, this is the first report of the conversion of Cu4O3-CuO and Cu2O by thermal annealing. The temperature-dependent (300-200 K) electrical transport properties of Cu4O3 thin films show that the charge transport above 190 K follows Arrhenius-type behavior with activation energy of 0.14 eV. From photo-electron spectroscopy and electrical transport measurements of Cu4O3 thin films, a downward band bending is observed at the surface of the thin film, which shows its p-type semiconducting nature. The successful preparation of phase pure p-type semiconducting Cu4O3 could provide opportunities to further explore its potential applications.

  20. KF addition to Cu2SnS3 thin films prepared by sulfurization process

    NASA Astrophysics Data System (ADS)

    Nakashima, Mitsuki; Fujimoto, Junya; Yamaguchi, Toshiyuki; Sasano, Junji; Izaki, Masanobu

    2017-04-01

    Cu2SnS3 thin films were fabricated by sulfurization with KF addition and applied to photovoltaic devices. Two methods, two-stage annealing and the use of four-layer precursors, were employed, and the quantity of NaF and KF and the annealing temperature were changed. By electron probe microanalysis (EPMA), the Cu/Sn mole ratio was found to range from 0.81 to 1.51. The X-ray diffraction (XRD) patterns and Raman spectra indicated that the fabricated thin films had a monoclinic Cu2SnS3 structure. The Cu2SnS3 thin films fabricated by two-stage annealing had a close-packed structure and a pinhole-free surface morphology. The best solar cell in this study showed V oc of 293 mV, which surpassed the previously reported value.

  1. YBa2Cu3O x superconducting nanorods

    NASA Astrophysics Data System (ADS)

    Rieken, William; Bhargava, Atit; Horie, Rie; Akimitsu, Jun; Daimon, Hiroshi

    2018-02-01

    Herein, we report the synthesis of YBa2Cu3O x superconducting nanorods performed by solution chemistry. Initially, a mixture of fine-grained coprecipitated powder was obtained and subsequently converted to YBa2Cu3O x nanorods by heating to 1223 K in oxygen for 12 h. The nanorods are superconducting without the need for any further sintering or oxygenation, thereby providing an avenue for direct application to substrates at room temperature or direct use as formed nanorods. A critical superconducting transition temperature T c of about 92 K was achieved at a critical magnetic field of 10 Oe.

  2. Low-pressure large-area magnetron sputter deposition of YBa2Cu3O7-δ films for industrial applications

    NASA Astrophysics Data System (ADS)

    Wördenweber, Roger; Hollmann, Eugen; Poltiasev, Michael; Neumüller, Heinz-Werner

    2003-05-01

    This paper addresses the development of a technically relevant sputter-deposition process for YBa2Cu3O7-delta films. First, the simulation of the particle transport from target to substrate indicates that only at a reduced pressure of p approx 1-10 Pa can a sufficiently large deposition rate and homogeneous stoichiometric distribution of the particles during large-area deposition be expected. The results of the simulations are generally confirmed by deposition experiments on CeO2 buffered sapphire and LaAlO3 substrates using a magnetron sputtering system suitable for large-area deposition. However, it is shown that in addition to the effect of scattering during particle transport, the conditions at the substrate lead to a selective growth of Y-Ba-Cu-O phases that, among others, strongly affect the growth rate. For example, the growth rate is more than three times larger for optimized parameters compared to the same set of parameters but at 100 K lower substrate temperature. Stoichiometrical and structural perfect films can be grown at low pressure (p < 10 Pa). However, the superconducting transition temperature of these films is reduced. The Tc reduction seems to be correlated with the c-axis length of YBa2Cu3O7-delta. Two possible explanations for the increased c-axis length and the correlated reduced transition temperature are discussed, i.e. reduced oxygen content and strong cation site disorder due to the heavy particle bombardment.

  3. Wet chemical techniques for passivation of YBa2Cu3O7(7-x)

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Foote, M. C.; Hunt, B. D.

    1989-01-01

    Wet chemical techniques are described for treatment of YBa2Cu3O(7-x) surfaces, resulting in the formation of native compounds with little or no reactivity to water. Promising native compounds include CuI, BaSO4, CuS, Cu2S, and the oxalates, all of which are either insoluble or have very low solubility in water. Treatment with dilute HI results in the formation of a native iodide film which is 80-90 percent CuI with small amounts of YI3 and BaI2. Treatment with dilute H2SO4 results in the formation of a film which is 95 percent BaSO4 and 5 percent Y2(SO4)3. Cu2S is formed on the surface with a dilute Na2S solution. An oxalate film with equal amounts of Y2(C2O4)3 and BaC2O4 results from treatment with dilute oxalic acid. X-ray photoelectron spectra show no significant changes when the sulfide, sulfate, or oxalate films are dipped in water, while the iodide film shows evidence of Cu(OH)2 formation.

  4. Preparation of YBa2Cu3O7 High Tc Superconducting Coatings by Plasma Spraying

    NASA Astrophysics Data System (ADS)

    Danroc, J.; Lacombe, J.

    The following sections are included: * INTRODUCTION * THE COMPOUND YBa2Cu3O7-δ * Structure * Critical temperature * Critical current density * Phase equilibria in the YBaCuO system * PREPARATION OF YBa2Cu3O7 COATINGS * General organisation of the preparation process * The powder * Hot plasma spraying of YBa2Cu3O7 * The post-spraying thermal treatment * CHARACTERISTICS OF THE YBa2Cu3O7-δ COATINGS * Chemical composition * Crystalline structure * Morphology of the coatings * Electrical and magnetic characteristics * Conclusion * REFERENCES

  5. Quasiparticle properties at microwave frequencies in the underdoped YBa2Cu3O7-δ thin films

    NASA Astrophysics Data System (ADS)

    Hsing, Lai

    2004-03-01

    Microstrip ring resonators with quality factor (Q) over 10^4 at temperature 5 K were fabricated using the double-side YBa_2Cu_3O_7-δ (YBCO) films deposited on LaAlO3 (LAO) substrates. By placing a narrow gap in the ring resonator, the original fundamental resonating mode (3.61 GHz) splits into two modes (1.80 GHz and 5.33 GHz) with distinct resonating frequencies. The samples allow us to determine the temperature and the frequency dependences of penetration depth and microwave conductivity for various underdoped-cuprates by using Drude formula and the modified two-fluid model. The natures of the order parameter of high-Tc superconductivity in the underdoped cases are shown to be of d-wave type in an exact manner. In particular, the Fermi-liquid correction factor α ^2 and the vertex correction factor β from the model, proposed by Wen and Lee, can be estimated that α ^2 is doping independent in the underdoped regime and β decreases as oxygen content is decreasing in our experiment data. All these results are independent of frequencies as well. The results reveal that the interaction between quasiparticles is insensitive dependence of the impurity concentrations due to oxygen deficiency on the CuO chain and the impurity potential for forward scattering approaches the same as back scattering with more oxygen deficiency.

  6. Optical characterization of sputtered YBaCo 4O 7+ δ thin films

    NASA Astrophysics Data System (ADS)

    Montoya, J. F.; Izquierdo, J. L.; Causado, J. D.; Bastidas, A.; Nisperuza, D.; Gómez, A.; Arnache, O.; Osorio, J.; Marín, J.; Paucar, C.; Morán, O.

    2011-02-01

    Thin films of YBaCo 4O 7+ δ were deposited on r (1012)-oriented Al 2O 3 substrates by dc magnetron sputtering. The as-grown films were characterized after their structural, morphological and optical properties. Special attention is devoted to the analysis of the optical response of these films as reports on optical properties of YBaCo 4O 7+ δ, especially in thin film form, are not frequently reported in the literature. Transmittance/absorbance measurements allow for determining two well defined energy gaps at 3.7 and 2.2 eV. In turn, infrared (IR) measurements show infrared transparency in the wave length range 4000-2500 nm with a sharp absorption edge at wave lengths less than 2500 nm. Complementary Raman spectra measurements on the thin films allowed for identifying bands associated with vibrating modes of CoO 4 and YO 6 in tetrahedral and octahedral oxygen coordination, respectively. Additional bands which seemed to stem from Co ions in octahedral oxygen coordination were also clearly identified.

  7. Critical current density in (YBa2Cu3O7-δ)1-x-(PrBa2Cu3O7-δ)x melt-textured composites

    NASA Astrophysics Data System (ADS)

    Opata, Yuri Aparecido; Monteiro, João Frederico Haas Leandro; Jurelo, Alcione Roberto; Siqueira, Ezequiel Costa

    2018-06-01

    Melt textured (YBa2Cu3O7-δ)1-x-(PrBa2Cu3O7-δ)x composites (x = 0.00 and x = 0.05) were grown using the top seeding method. The effect of the PrBa2Cu3O7-δ phase on the growth process and the modification of the microstructure as well as on the physical properties was analyzed. X-ray analyses indicated that both pure and Pr-doped samples present an orthorhombic superconducting phase. From resistivity measurements for YBa2Cu3O7-δ and (YBa2Cu3O7-δ)0.95-(PrBa2Cu3O7-δ)0.05 samples, the Tcab did not change and was around 90.5 K. However, from magnetic measurements, the superconductivity was observed in critical temperatures TC = 92.9 K and 92.4 K for YBa2Cu3O7-δ and (YBa2Cu3O7-δ)0.95-(PrBa2Cu3O7-δ)0.05 samples, respectively. The YBa2Cu3O7-δ sample showed higher critical current densities than those shown by the (YBa2Cu3O7-δ)0.95-(PrBa2Cu3O7-δ)0.05 sample, with values of JC = 5.85 × 105 A/cm2 and 4.72 × 105 A/cm2, respectively. This paper also discusses the importance of Pr substitution on nano- and micro-meter scales to enhance JC(H).

  8. Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

    2011-10-01

    We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

  9. Microwave response of high transition temperature superconducting thin films

    NASA Technical Reports Server (NTRS)

    Miranda, Felix Antonio

    1991-01-01

    We have studied the microwave response of YBa2Cu3O(7 - delta), Bi-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O high transition temperature superconducting (HTS) thin films by performing power transmission measurements. These measurements were carried out in the temperature range of 300 K to 20 K and at frequencies within the range of 30 to 40 GHz. Through these measurements we have determined the magnetic penetration depth (lambda), the complex conductivity (sigma(sup *) = sigma(sub 1) - j sigma(sub 2)) and the surface resistance (R(sub s)). An estimate of the intrinsic penetration depth (lambda approx. 121 nm) for the YBa2Cu3O(7 - delta) HTS has been obtained from the film thickness dependence of lambda. This value compares favorably with the best values reported so far (approx. 140 nm) in single crystals and high quality c-axis oriented thin films. Furthermore, it was observed that our technique is sensitive to the intrinsic anisotropy of lambda in this superconductor. Values of lambda are also reported for Bi-based and Tl-based thin films. We observed that for the three types of superconductors, both sigma(sub 1) and sigma(sub 2) increased when cooling the films below their transition temperature. The measured R(sub s) are in good agreement with other R(sub S) values obtained using resonant activity techniques if we assume a quadratic frequency dependence. Our analysis shows that, of the three types of HTS films studied, the YBa2Cu3O(7 - delta) thin film, deposited by laser ablation and off-axis magnetron sputtering are the most promising for microwave applications.

  10. Physical properties of YBa 2Cu 3O 7- δ thin films using microstrip ring resonators technique

    NASA Astrophysics Data System (ADS)

    Lai, L. S.; Zeng, H. K.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Lin, J. Y.; Gou, Y. S.

    2006-09-01

    Microstrip ring resonators with quality factor ( Q) over 10 4 at temperature 5 K, were fabricated using the double-side YBa 2Cu 3O 7- δ (YBCO) epitaxial films deposited on LaAlO 3 (LAO) substrates. By placing a narrow gap in the ring resonator, we observed that the original fundamental resonating mode (resonance frequency f = 3.61 GHz) splits into a dual-mode with different resonating frequencies ( f = 1.80 GHz and f = 5.33 GHz). These two kinds of the resonator allow us to determine the temperature and frequency dependences of the magnetic penetration depth λ( T, f) and the surface loss. Several salient features of the above findings related to the nature of low-lying excitations for high- Tc superconductivity as a function of oxygen content will be elucidated. In particular, the current models, suggested by Wen and Lee, will be examined in a quantitative manner. It allows us to give a justification of quasiparticle as Fermi-liquid in the superconducting state. In addition, an equivalent inductance circuit model is suggested to account for the occurrence of the dual-mode resonance.

  11. Evaluation of Characteristic Energy Scales of Pressure Stabilized Oxygen Chain States in YBa2Cu3Ox Films

    DTIC Science & Technology

    2017-03-14

    2], and [4]. In the case of YBa2Cu3O∇x, the application of sufficient uniaxial pressure results in the film having discrete regions of uniform...that discrete regions of uniform oxygen content are stabilized where x ≈ [6, 6.5, 6.72, 6.81, 7]. The latter four oxygen content levels correspond to...associated energy levels of the stabilized lattice states ᝺>, �>, >, and ə>, and find evidence for discrete energy levels of the pressure

  12. Crystalline orientation engineering and charge transport in thin film YBa(2)Cu(3)O(7-x) superconducting surface-coated conductors

    NASA Astrophysics Data System (ADS)

    Chudzik, Michael Patrick

    The weak-link behavior of grain boundaries in polycrystalline high-T c superconductors adversely affects the current density in these materials. The development of wire technology based on polycrystalline high-Tc materials requires understanding and controlling the development of low-angle grain boundaries in these conductors. The research goal is to comprehensively examine the methodology in fabrication and characterization to understand the structure-transport correlation in YBa2Cu3O 7-x (YBCO) surface-coated conductors. High current density YBCO coated conductors were fabricated and characterized as candidates for second generation high-Tc wire technology. Critical current densities (Jc) greater than 1 x 106 A/cm2 at 77 K and zero magnetic field were obtained using thin films epitaxially grown by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD) on oriented buffer layers. The biaxially textured oxide buffer layers were deposited by ion-beam-assisted deposition (IBAD). The transport properties of coated conductors were evaluated in high magnetic fields for intrinsic and extrinsic flux vortex pinning effects for improved high-field properties. Transport Jc's of these coated conductors at 7 tesla (77 K) were measured at values greater than 105 A/cm 2 with the magnetic field perpendicular to the YBCO c-axis (B⊥ c) in both MOCVD and PLD derived conductors. The Jc's in B || c orientation fell an order of magnitude lower at 7 tesla to values near 10 4 A/cm2 due to decreased intrinsic flux pinning. The critical current densities as a function of grain boundary misorientation were found to deviate from the general trend determined for single grain boundary junctions, due to the mosaic structure, which allows meandering current flow. Extensive parametric investigations of relevant thin film growth techniques were utilized to establish growth-property relationships that led to optimized fabrication of high-Tc conductors. The work contained

  13. Flux pinning properties of YBa2Cu3O7-δ thin films containing a high density of nanoprecipitates: A comparative study to reveal size effects

    NASA Astrophysics Data System (ADS)

    Yamasaki, Hirofumi; Yamada, Hiroshi

    2017-11-01

    Temperature dependence of critical current density Jc(H, T) was measured in moderate magnetic fields (H ⊥ film) in two thermally co-evaporated YBa2Cu3O7-δ (YBCO) thin films (A, B) and two YBCO films (C, D) deposited using a pulsed-laser deposition method. All sample films were grown epitaxially with the c-axis perpendicular to the surface of a single-crystalline substrate. Transmission electron microscopy observation revealed that these four films contained a high density of nanoprecipitates with typical sizes of 3.6 - 5.0 nm (A), 5.0 - 7.1 nm (B), 7.0 - 10.1 nm (C) and 8.7 - 14.3 nm (D). Films A and B contained very fine nanoprecipitates, whose typical diameters Dtyp are smaller than double the estimated Ginzburg-Landau coherence length 2ξab at T = 77 K, and exhibited a steep increase of Jc with decreasing temperature. Whereas, film D, which contained relatively large nanoprecipitates (Dtyp > 2ξab at T ≤ 70 K), exhibited a gradual increase in Jc. This led to a remarkable crossing of the Jc(T) curves. The temperature dependence of Jc(H//c) under a fixed magnetic field is approximated by Jc ∼ (1 - T/Tc)m(1 + T/Tc)2 where the index m is larger for films containing finer precipitates; that is, m(A) > m(B) > m(C) > m(D). This means that finer nanoprecipitates generally cause steeper Jc increase at low temperatures, which is the origin of the observed crossing phenomenon. The experimental results are reasonably explained by several theoretical models based on the direct summation of elementary pinning forces fp calculated by core pinning interactions.

  14. Transport properties of YBa2Cu3Ox /La0.67Sr0.33MnO3 nanostrips and YBa2Cu3Ox/La0.67Sr0.33MnO3/YBa2Cu3Ox nanojunctions

    NASA Astrophysics Data System (ADS)

    Štrbík, V.; Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V.; Chromik, Š.; Gál, N.; Knoška, J.; Sojková, M.; Pisarčík, M.

    2016-03-01

    A metallic ferromagnet (F) in proximity with a superconductor (S) can transport supercurrent on a long distance through conversion of opposite-spin singlet Cooper pairs (CP) into equal-spin triplet CP (long range triplet component, LRTC), which are not broken by the exchange energy of F. The optimal conditions for the conversion are yet to be clarified; however, it is accepted that the key point to this process include high interface transparency and magnetic inhomogeneity at the SF interface. The aim of our paper is to study SF nanostrips (length of about 1500 nm and width down to 300 nm) and lateral SFS nanojunctions based on high critical temperature YBa2Cu3Ox (YBCO) and half-metallic La0.67Sr0.33MnO3 (LSMO) thin films. We applied a focused Ga+ ion beam (FIB) for patterning the SF nanostrips, as well as lateral SFS nanojunctions, by creating a slot in the nanostrip after removing the YBCO film in the slot along a length of about 200 nm. The temperature dependences of the samples resistance R(T) show critical temperature TCn ≈ 89 K of the SF nanostrips; however, the SFS nanojunctions at T < TCn show a residual resistance R < 100 Ω corresponding to a dirty LSMO (ρ≈ 10 mΩ cm) in the slot. The LRTC was not observed in our lateral SFS nanojunctions until now.

  15. Thin films of the Bi2Sr2Ca2Cu3O(x) superconductor

    NASA Technical Reports Server (NTRS)

    Mei, YU; Luo, H. L.; Hu, Roger

    1990-01-01

    Using RF sputtering technique, thin films of near single phase Bi2Sr2Ca2Cu3O(x) were successfully prepared on SrTiO3(100), MgO(100), and LaAlO3(012) substrates. Zero resistance of these films occurred in the range of 90-105 K.

  16. Artificial in-plane ordering of textured YBa2Cu3O(7-x) films deposited on polycrystalline yttria-stabilized zirconia substrates

    NASA Astrophysics Data System (ADS)

    Harshavardhan, K. S.; Rajeswari, M.; Hwang, D. M.; Chen, C. Y.; Sands, T. D.; Venkatesan, T.; Tkaczyk, J. E.; Lay, K. W.; Safari, A.; Johnson, L.

    1992-12-01

    Anisotropic surface texturing of the polycrystalline yttria-stabilized zirconia substrates, prior to YBa2Cu3O(7-x) film deposition, is shown to promote in-plane (basal plane) ordering of the film growth in addition to the c-axis texturing. The Jc's of the films in the weak-link-dominated low-field regime are enhanced considerably, and this result is attributed to the reduction of weak links resulting from a reduction in the number of in-plane large-angle grain boundaries.

  17. Microwave Conductivity of Laser Ablated YBa2Cu3O7-delta Superconducting Films and Its Relation to Microstrip Transmission Line Performance

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Warner, J. D.; Chorey, C. M.; Ebihara, B. T.; Romanofsky, R. R.; Heinen, V. O.

    1990-01-01

    We report on the values of the microwave conductivity in the normal (sigma(subN)) and superconducting (sigma*=sigma(sub1)-j sigma(sub2)) states of two laser ablated YBa2CU3O7(sigma) thin films at 35 GHz, in the temperature range from 20 to 300 K. The films 0.7 and 0.4 micrometers) were deposited on LaA10(sub3) by laser ablation. The conductivity was obtained from the microwave power transmitted through the films and assuming a two-fluid model. Values of sigma(subN) approximately 2.3 X 10(exp5) S/m at room temperature for both films, and of sigma(sub1) approximately 6.3 X 10(exp5) and 4.6 X 10(exp5) S/m at temperatures around 80 K were obtained for the 0.7 and 0.4 micrometer films respectively. For sigma(sub2) values of 4.9 X 10(exp6) and 5.4 X 10(exp6) S/m were obtained for the 0.7 and 0.4 micrometer films at 80 K. The expected conductor losses and Q-factor of a superconducting ring resonator were calculated using these conductivity values. The theoretical values were then compared with the experimental results obtained for a resonator fabricated from one of these films.

  18. Reduced reactivity to air on HF-treated YBa2Cu3O(7-x)surfaces

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Hunt, B. D.; Foote, M. C.

    1989-01-01

    Treatment of YBa2Cu3O(7-x) films with a nonaqueous solution of HF in absolute ethanol results in the formation of an oxyfluoride with relative Y:Ba:Cu concentrations of 1:4:3 on the surface, as determined by X-ray photoelectron spectroscopy. The passivation properties of chemically treated films were tested by monitoring the growth of the high binding energy O 1s peak, associated with nonsuperconducting surface species, as a function of air exposure time, for both HF-treated and untreated films. The native oxyfluoride is shown to reduce the reactivity of the superconductor to air.

  19. Epitaxial Growth of YBa2Cu3O7 Films onto LaAlO3 (100) by Using Oxalates

    NASA Astrophysics Data System (ADS)

    Dominguez, A. Bustamante; Felix, L. León; Garcia, J.; Santibañez, J. Flores; Valladares, L. De Los Santos; Gonzalez, J. C.; Anaya, A. Osorio; Pillaca, M.

    Due to the current necessity to obtain epitaxial superconductor films at low cost, we report the growth of YBa2Cu3O7 (Y123) films by chemical deposition. The procedure involved simple steps such as precipitation of stoichiometric amounts of yttrium, barium and copper acetates in oxalic acid (H2C2O4). The precursor solution was dripped onto LaAlO3 (100) substrates with the help of a Fisher pipette. The films were annealed in oxygen atmosphere during 12 h at three different temperatures: 820 °C, 840 °C and 860 °C. After 820 °C and 860 °C annealing, X-ray diffraction (XRD) analysis revealed high intensity of the (00l) reflections denoting that most of the Y123 grains were c-axis oriented. In addition, we also observed a-axis oriented grains ((h00) reflexion), minor randomly oriented grains and other phases (such as Y2BaCuO5 and CuO). In contrast, the sample treated at 840 °C, we noticed c - and a-axis oriented grains, very small amounts of randomly oriented grains without formation of other phases. From the magnetization versus temperature measurements, the critical temperatures were estimated at 70K and 90K for the samples annealed at 820 °C and 860 °C respectively.

  20. Atomic layer epitaxy of YBaCuO for optoelectronic applications

    NASA Technical Reports Server (NTRS)

    Skogman, R. A.; Khan, M. A.; Van Hove, J. M.; Bhattarai, A.; Boord, W. T.

    1992-01-01

    An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

  1. Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects

    NASA Technical Reports Server (NTRS)

    Valco, George J.; Rohrer, Norman J.; Warner, Joseph D.; Bhasin, Kul B.

    1988-01-01

    Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.

  2. Critical current density enhancement by phase decomposition of YBa 2Cu 4O 8 into YBa 2Cu 3O 7-σ and CuO

    NASA Astrophysics Data System (ADS)

    Krelaus, J.; Heinemann, K.; Ullmann, B.; Freyhardt, H. C.

    1995-02-01

    Bulk YBa 2Cu 4O 8 (Y-124) is prepared from YBa 2Cu 3O 7-σ (Y-123) and CuO by a powder-metallurgical method. The superconducting features of the Y-124, in particular critical current densities and activation energies, are measured resistively using a four-probe technique and magnetically using a Faraday magnetometer. In a second step the Y-124 is decomposed at high temperatures. The intragranular critical current density is measured at different annealing times, tA, in order to determine and discuss the characteristics of the jc( tA) curves.

  3. Unconventional critical state in YBa2Cu3O7-δ thin films with a vortex-pin lattice fabricated by masked He+ ion beam irradiation

    NASA Astrophysics Data System (ADS)

    Zechner, G.; Mletschnig, K. L.; Lang, W.; Dosmailov, M.; Bodea, M. A.; Pedarnig, J. D.

    2018-04-01

    Thin superconducting YBa2Cu3O7-δ films are patterned with a vortex-pin lattice consisting of columnar defect regions (CDs) with 180 nm diameter and 300 nm spacing. They are fabricated by irradiation with 75 keV He+ ions through a stencil mask. Peaks of the critical current reveal the commensurate trapping of vortices in domains near the edges of the sample. Upon ramping an external magnetic field, the positions of the critical current peaks are shifted from their equilibrium values to lower magnetic fields in virgin and to higher fields in field-saturated down-sweep curves, respectively. Based on previous theoretical predictions, this irreversibility is interpreted as a nonuniform, terrace-like critical state, in which individual domains are occupied by a constant number of vortices per pinning site. The magnetoresistance, probed at low current densities, is hysteretic and angle dependent and exhibits minima that correspond to the peaks of the critical current. The minima’s positions scale with the component of the magnetic field parallel to the axes of the CDs, as long as the tilted vortices can be accommodated within the CDs. This behavior, different from unirradiated films, confirms that the CDs dominate the pinning.

  4. Synthesis and characterization of YBaCu2O5-δ compound

    NASA Astrophysics Data System (ADS)

    Ehsandoust, A.; Sandoghchi, M.; Mokhtari, P.; Akhavan, M.

    2018-05-01

    YBaCu2O5 compound as one of the possible microstructures of Y3Ba5Cu8O19 has been synthesized. The X-ray diffraction analysis of this compound indicates that its formation is accompanied with the formation of YBa2Cu3O7-δ. The observed superconductivity around ∼92 K supports this. So, it seems that YBa2Cu3O7-δ is responsible for the observed superconductivity in YBaCu2O5, and this phase is not an independent superconducting phase. Consequently, the overall effect of the YBaCu2O5 formation during the Y3Ba5Cu8O19 fabrication process could be a reduction in Tc.

  5. Superconducting properties of nano-sized SiO2 added YBCO thick film on Ag substrate

    NASA Astrophysics Data System (ADS)

    Almessiere, Munirah Abdullah; Al-Otaibi, Amal lafy; Azzouz, Faten Ben

    2017-10-01

    The microstructure and the flux pinning capability of SiO2-added YBa2Cu3Oy thick films on Ag substrates were investigated. A series of YBa2Cu3Oy thick films with small amounts (0-0.5 wt%) of nano-sized SiO2 particles (12 nm) was prepared. The thicknesses of the prepared thick films was approximately 100 µm. Phase analysis by x-ray diffraction and microstructure examination by scanning electron microscopy were performed and the critical current density dependence on the applied magnetic field Jc(H) and electrical resistivity ρ(T) were investigated. The magnetic field and temperature dependence of the critical current density (Jc) was calculated from magnetization measurements using Bean's critical state model. The results showed that the addition of a small amount (≤0.02 wt%) of SiO2 was effective in enhancing the critical current densities in the applied magnetic field. The sample with 0.01 wt% of added SiO2 exhibited a superconducting characteristics under an applied magnetic field for a temperature ranging from 10 to 77 K.

  6. Heteroepitaxial growth of Ba1 - xSrxTiO3/YBa2Cu3O7 - x by plasma-enhanced metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, T. J.; Hou, S. Y.

    1994-06-01

    Epitaxial Ba1-xSrxTiO3(BST)/YBa2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that <100> oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSrxTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1-xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1-xSrxTiO3/YBa2Cu3O7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

  7. Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Reade, R. P.; Mao, X. L.; Russo, R. E.

    1991-08-01

    The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily c-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001)-oriented YSZ intermediate layers and have Tc (R = 0) = 86.0 K and Jc about 3000 A/sq cm at 77 K.

  8. Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

    NASA Astrophysics Data System (ADS)

    Truman, James Kelly

    1992-01-01

    The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be

  9. The effect of fluctuations on the electrical transport behavior in YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Vitta, Satish; Alterovitz, S. A.; Stan, M. A.

    1993-01-01

    The excess conductivity behavior of highly oriented YBa2Cu3O(7-x) thin films prepared by both coevaporation and laser ablation was studied in detail in the reduced-temperature range 9 x 10(exp -4) is less than t is less than 1. The excess conductivity in all the films studied was found to diverge sharply near T(sub c), in agreement with the conventional mean-field theory. However, the detailed temperature dependence could not be fitted to either the power-law or the logarithmic functional forms as predicted by the theory. The excess conductivity of all the films was found to be exponentially dependent on the temperature over nearly three decades for 9 x 10(exp -4) is less than t is less than 10(exp -1), in contradiction to the mean-field theory.

  10. Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

    NASA Astrophysics Data System (ADS)

    Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

    2017-11-01

    In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

  11. Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com; Panchal, A.K.

    2016-05-06

    First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the ordermore » of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.« less

  12. Dominant pinning mechanisms in YBa2Cu3O7-x films on single and polycrystalline yttria stabilized zirconia substrates

    NASA Astrophysics Data System (ADS)

    Harshavardhan, K. S.; Rajeswari, M.; Hwang, D. M.; Chen, C. Y.; Sands, T.; Venkatesan, T.; Tkaczyk, J. E.; Lay, K. W.; Safari, A.

    1992-04-01

    Critical-current densities have been measured in YBa2Cu3O7-x films deposited on (100) yttria stabilized zirconia (YSZ) and polycrystalline YSZ substrates as a function of temperature (4.5-88 K), magnetic field (0-1 T) and orientation relative to the applied field. The results indicate that in films on polycrystalline substrates, surface and interface pinning play a dominant role at high temperatures. In films on (100) YSZ, pinning is mainly due to intrinsic layer pinning as well as extrinsic pinning associated with the interaction of the fluxoids with point defects and low energy planar (2D) boundaries. The differences are attributed to the intrinsic rigidity of single fluxoids which is reduced in films on polycrystalline substrates thereby weakening the intrinsic layer pinning.

  13. RAPID COMMUNICATION: Large-area uniform ultrahigh-Jc YBa2Cu3O7-x film fabricated by the metalorganic deposition method using trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Araki, Takeshi; Yamagiwa, Katsuya; Hirabayashi, Izumi; Suzuki, Katsumi; Tanaka, Shoji

    2001-07-01

    Ultrahigh-Jc YBa2Cu3O7-x (YBCO) films have been successfully fabricated by the metalorganic deposition method using a trifluoroacetate coating solution which is prepared by a newly developed purification technique, the solvent-into-gel (SIG) method. The prepared pure coating solution has less than 0.25% impurities and has a wide flexibility in process conditions to obtain high-Jc YBCO film. Using this feature, we have successfully formed 50 mm diameter YBCO films, which have a critical current density over 10 MA cm-2 (77 K, 0 T) on LaAlO3 single crystalline substrates.

  14. Nucléation et croissance de films YBa_{2Cu3O_{7 - δ}} déposés par ablation laser sur substrat de MgO(001)

    NASA Astrophysics Data System (ADS)

    Keller, D.; Gervais, A.; Chambonnet, D.; Belouet, C.; Audry, C.

    1995-02-01

    In the field of superconducting devices devoted to microwave applications, the crystalline texture of high quality thin films based on YBa{2}Cu{3}O{7 - δ} is of primary importance. This study presents the formation of this texture on MgO substrates with the nucleation and growth steps up to a film thickness of 300 nm as observed by means of AFM, HRTEM and XRD. The influence of deposition temperature on the growth mode is shown and a nucleation/growth model is discussed. The minimum roughness of c_{bot 0}{(^1)} textured films, 300 nm thick and 20 × 20 mm2 in size is as slow as 2 nm. Dans le cadre de la réalisation de composants supraconducteurs de haute qualité à base du composé YBa{2}Cu{3}O{7 - δ} destinés aux applications en hyperfréquences, le contrôle de la texture cristalline des films est de première importance. La formation de celle-ci sur substrat MgO est étudiée depuis la nucléation jusqu'à une épaisseur de 300 nm au moyen de la microscopie à force atomique, de la microscopie électronique en transmission à haute résolution et de la diffraction des rayons X. L'influence de la température de dépôt sur le mode de croissance est abordée et un modèle de nucléation/croissance est discuté. La rugosité minimale des films d'épaisseur 300 nm et de dimensions 20 × 20 mm2 de texture c_{bot 0}{(^1)} est voisine de 2 nm.

  15. High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

    NASA Astrophysics Data System (ADS)

    Bansal, Narottam P.; Simons, Rainee N.; Farrell, D. E.

    1988-08-01

    Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

  16. High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Simons, Rainee N.; Farrell, D. E.

    1988-01-01

    Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

  17. Scanning micro-Hall probe mapping of magnetic flux distributions and current densities in YBa{sub 2}Cu{sub 3}O{sub 7}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xing, W.; Heinrich, B.; Zhou, H.

    1994-12-31

    Mapping of the magnetic flux density B{sub z} (perpendicular to the film plane) for a YBa{sub 2}Cu{sub 3}O{sub 7} thin-film sample was carried out using a scanning micro-Hall probe. The sheet magnetization and sheet current densities were calculated from the B{sub z} distributions. From the known sheet magnetization, the tangential (B{sub x,y}) and normal components of the flux density B were calculated in the vicinity of the film. It was found that the sheet current density was mostly determined by 2B{sub x,y}/d, where d is the film thickness. The evolution of flux penetration as a function of applied field willmore » be shown.« less

  18. Phonon Dispersion Measurements of YBa 2Cu 3O 6.15 and YBa 2Cu 3O 6.95 by Time-of-Flight Neutron Spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chung, J.-H.; Egami, T.; McQueeny, R. J.

    We measured the phonon dispersions of YBa{sub 2}Cu{sub 3}O{sub 6.15} and YBa{sub 2}Cu{sub 3}O{sub 6.95} by time-of-flight inelastic neutron scattering. The in-plane bond-stretching modes in the metallic phase showed a distinct a-b plane anisotropy beyond what is expected for structural origin. Such anisotropy in the longitudinal optical modes, which is absent in the TO, suggests strong in-plane anisotropy in the underlying electronic structure. Apical oxygen bond-stretching modes showed a large frequency change between the insulating and the metallic phases. This large softening also is beyond structural origin, and suggests the effect of local electronic environment.

  19. Influences of annealing temperature on sprayed CuFeO2 thin films

    NASA Astrophysics Data System (ADS)

    Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

    2018-06-01

    Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

  20. Theoretical calculations of oxygen relaxation in YBa2Cu3O6+x ceramics

    NASA Astrophysics Data System (ADS)

    Mi, Y.; Schaller, R.; Sathish, S.; Benoit, W.

    1991-12-01

    A two-dimensional theoretical model of stress-induced point-defect relaxation in a layered structure is presented, with a detailed discussion of the special case of YBa2Cu3O6+x. The experimental results of oxygen relaxation in YBa2Cu3O6+x can be explained qualitatively by this model.

  1. Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

    NASA Astrophysics Data System (ADS)

    Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

    2018-05-01

    We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

  2. Photoexcited Carrier Dynamics of Cu 2S Thin Films

    DOE PAGES

    Riha, Shannon C.; Schaller, Richard D.; Gosztola, David J.; ...

    2014-11-11

    Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu 2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this paper, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu 2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deducedmore » from the spectral evolution from 300 fs to 300 μs. Finally, revealing the effects of grain morphology on the photophysical properties of Cu 2S is a crucial step toward reaching high efficiencies in operationally stable Cu 2S thin film photovoltaics.« less

  3. Method for making high-critical-current-density YBa.sub.2 Cu.sub.3 O.sub.7 superconducting layers on metallic substrates

    DOEpatents

    Feenstra, Roeland; Christen, David; Paranthaman, Mariappan

    1999-01-01

    A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

  4. Evidence for filamentary superconductivity up to 220 K in oriented multiphase Y-Ba-Cu-O thin films

    NASA Astrophysics Data System (ADS)

    Schönberger, R.; Otto, H. H.; Brunner, B.; Renk, K. F.

    1991-02-01

    We report on the observation of filamentary superconductivity up to 220 K in multiphase Y-Ba-Cu-O materials that are deposited as highly oriented thin films on (110)-SrTiO 3 substrates by laser ablation from ceramic targets. The high temperature zero resistivity states are reproducible after temperature cycling down to 80 K for samples treated by a special oxygenation and ozonization process at 340 K and measured in a pure oxygen atmosphere. Our results on thin films confirm former experiments of J.T. Chen and co-workers obtained on ceramic samples with preferred crystallite orientation. A close connection between superconductivity and structural instabilities of most likely ferroic nature, which are observed more often for YBa 2Cu 3O 7 in a narrow temperature range near 220 K, is suggested.

  5. Near-edge study of gold-substituted YBa2Cu3O(7-delta)

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Hepp, Aloysius F.

    1991-01-01

    The valence of Cu and Au in YBa2Au0.3Cu2.7O7-delta was investigated using X-ray absorption near edge structure (XANES). X-ray and neutron diffraction studies indicate that Au goes on the Cu(1) site and Cu K-edge XANES shows that this has little effect on the oxidation state of the remaining copper. The Au L3 edge develops a white line feature whose position lies between that of trivalent gold oxide and monovalent potassium gold cyanide, and whose height relative to the edge step is smaller than in the two reference compounds. The appearance of the Au L3 edge suggests that fewer Au 3d states are involved in forming the Au-O bond in YBa2Au0.3Cu2.7O7-delta than in trivalent gold oxide.

  6. Near-edge study of gold-substituted YBa2Cu3O(7-delta)

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Hepp, Aloysius F.

    1991-01-01

    The valence of Cu and Au in YBa2Au0.3Cu2.7O7-delta was investigated using x-ray absorption near edge structure (XANES). X-ray and neutron diffraction studies indicate that Au goes on the Cu(1) site and Cu K-edge XANES shows that this has little effect on the oxidation state of the remaining copper. The Au L3 edge develops a white line feature whose position lies between that of trivalent gold oxide and monovalent potassium gold cyanide, and whose height relative to the edge step is smaller than in the two reference compounds. The appearance of the Au L3 edge suggests that fewer Au 3d states are involved in forming the Au-O bond in YBa2Au0.3Cu2.7O7-delta than in trivalent gold oxide.

  7. Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

    NASA Astrophysics Data System (ADS)

    Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

    1998-07-01

    Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

  8. Preparation of epitaxial TlBa2Ca2Cu3O9 high Tc thin films on LaAlO3 (100) substrates

    NASA Astrophysics Data System (ADS)

    Piehler, A.; Reschauer, N.; Spreitzer, U.; Ströbel, J. P.; Schönberger, R.; Renk, K. F.; Saemann-Ischenko, G.

    1994-09-01

    Epitaxial TlBa2Ca2Cu3O9 high Tc thin films were prepared on LaAlO3 (100) substrates by a combination of laser ablation and thermal evaporation of thallium oxide. X-ray diffraction patterns of θ-2θ scans showed that the films consisted of highly c axis oriented TlBa2Ca2Cu3O9. φ scan measurements revealed an epitaxial growth of the TlBa2Ca2Cu3O9 thin films on the LaAlO3 (100) substrates. Ac inductive measurements indicated the onset of superconductivity at 110 K. At 6 K, the critical current density was 4×106 A/cm2 in zero magnetic field and 6×105 A/cm2 at a magnetic field of 3 T parallel to the c axis.

  9. Low resistivity contacts to YBa2Cu3O(7-x) superconductors

    NASA Technical Reports Server (NTRS)

    Hsi, Chi-Shiung; Haertling, Gene H.

    1991-01-01

    Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

  10. Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

    NASA Astrophysics Data System (ADS)

    Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

    2012-02-01

    The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

  11. Atomic scale real-space mapping of holes in YBa2Cu3O(6+δ).

    PubMed

    Gauquelin, N; Hawthorn, D G; Sawatzky, G A; Liang, R X; Bonn, D A; Hardy, W N; Botton, G A

    2014-07-15

    The high-temperature superconductor YBa2Cu3O(6+δ) consists of two main structural units--a bilayer of CuO2 planes that are central to superconductivity and a CuO(2+δ) chain layer. Although the functional role of the planes and chains has long been established, most probes integrate over both, which makes it difficult to distinguish the contribution of each. Here we use electron energy loss spectroscopy to directly resolve the plane and chain contributions to the electronic structure in YBa2Cu3O6 and YBa2Cu3O7. We directly probe the charge transfer of holes from the chains to the planes as a function of oxygen content, and show that the change in orbital occupation of Cu is large in the chain layer but modest in CuO2 planes, with holes in the planes doped primarily into the O 2p states. These results provide direct insight into the local electronic structure and charge transfers in this important high-temperature superconductor.

  12. Method for preparation of textured YBa.sub.2 Cu.sub.3 O.sub.x superconductor

    DOEpatents

    Selvamanickam, Venkat; Goyal, Amit; Kroeger, Donald M.

    1998-01-01

    The present invention relate to textured YBa.sub.2 Cu.sub.3 O.sub.x (Y-123) superconductors and a process of preparing them by directional recrystallization of compacts fabricated from quenched YBCO powders at temperatures about 100.degree. C. below the peritectic temperature to provide a superconductor where more than 75% of the YBa.sub.2 Cu.sub.3 O.sub.x phase is obtained without any Y.sub.2 BaCuO.sub.5 .

  13. Nonaqueous slip casting of YBa2Cu3O(7-x) superconductive ceramics. Ph.D. Thesis - 1993

    NASA Technical Reports Server (NTRS)

    Hooker, Matthew W.; Taylor, Theodore D.

    1994-01-01

    This study investigates the slip casting of YBa2Cu3O(7-x) powders using nonaqueous carrier liquids and fired ceramic molds. The parameters of the process examined here include the rheological properties of YBa2Cu3O(7-x) powder dispersed in various solvent/dispersant systems, the combination of nonaqueous slips with fired ceramic molds to form the superconductive ceramics, the process-property relationships using a four-factor factorial experiment, and the applicability of magnetic fields to align the YBa2Cu3O(7-x) grains during the casting process.

  14. Influence of γ-Irradiation on the Optical Properties of the Polyimide-YBa2Cu3O6.7 System

    NASA Astrophysics Data System (ADS)

    Muradov, A. D.; Korobova, N. E.; Kyrykbaeva, A. A.; Yar-Mukhamedova, G. Sh.; Mukashev, K. M.

    2018-05-01

    Influence of γ-irradiation on the optical properties of a polyimide film and its polymer compositions with fillers of a dispersed powder of a high-temperature superconductor ҮBa2Cu3O6.7 (YBaCuO) with concentrations of 0.05, 0.10, and 0.50 wt.% was studied. It was established that γ-irradiation with a dose up to 600 kGy does not affect the transparency of polyimide films in the visible region of the spectrum. However, at irradiation doses of 250 and 600 kGy, a weakly expressed fine structure appears in the spectra of polyimide films in the range of 220-300 nm due to the contribution of the resulting diene structures to the optical transmission and the increased content of oxygen atoms. The YBaCuO filler and γ-irradiation cause the polyimide transition from the amorphous state to the crystalline state, which is manifested in a sharp change in the spectrum in the range of 2.3-3.9 eV. A significant increase in the extinction coefficient was found in the composite containing 0.50 wt.% of the filler that is associated with an increase in the radius of action of structurally active fillers on the macromolecules of the matrix.

  15. Magnetic phase diagram of underdoped YBa 2 Cu 3 O y inferred from torque magnetization and thermal conductivity

    DOE PAGES

    Yu, Fan; Hirschberger, Max; Loew, Toshinao; ...

    2016-10-24

    We obtain the magnetic phase diagram in the underdoped cuprate YBa2Cu3Oy using torque magnetometry at temperatures 0.3–70 K and magnetic fields up to 45 T. At low fields, vortices (quantized flux tubes) form a vortex solid that is strongly pinned to the lattice. At large fields, melting of the solid to a vortex liquid produces nonzero dissipation. However, the vortex liquid persists to fields above 41 T. We have also mapped out the “transition” fields at which the charge-density–wave state (observed in X-ray diffraction experiments) becomes stable. Our results show that, in intense fields, superconductivity adjusts to coexist with themore » charge-density wave, but the Cooper pairs, which define the superconducting fluid, survive to fields well above 41 T.« less

  16. Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

    NASA Astrophysics Data System (ADS)

    Tsay, Chien-Yie; Chen, Ching-Lien

    2017-06-01

    In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

  17. Pulsed laser deposition of thick BaHfO3-doped YBa2Cu307-δ films on highly alloyed textured Ni-W tapes

    NASA Astrophysics Data System (ADS)

    Sieger, M.; Hänisch, J.; Iida, K.; Gaitzsch, U.; Rodig, C.; Schultz, L.; Holzapfel, B.; Hühne, R.

    2014-05-01

    YBa2Cu3O7-δ (YBCO) films with a thickness of up to 3 μm containing nano-sized BaHfO3 (BHO) have been grown on Y2O3/Y-stabilized ZrO2/CeO2 buffered Ni-9at% W tapes by pulsed laser deposition (PLD). Structural characterization by means of X-ray diffraction confirmed that the YBCO layer grew epitaxial. A superconducting transition temperature Tc of about 89 K with a transition width of 1 K was determined, decreasing with increasing BHO content. Critical current density in self-field and at 0.3 T increased with increasing dopant level.

  18. Preparation, patterning, and properties of thin YBa2Cu3O(7-delta) films

    NASA Astrophysics Data System (ADS)

    de Vries, J. W. C.; Dam, B.; Heijman, M. G. J.; Stollman, G. M.; Gijs, M. A. M.

    1988-05-01

    High T(c) superconducting thin films were prepared on (100) SrTiO3 substrates by dc triode sputtering and subsequent annealing. In these films Hall-bar structures having a width down to 5 microns were patterned using a reactive ion-etching technique. Superconductivity above 77 K was observed. When compared with the original film there is only a small reduction in T(c). The critical current density determined by electrical measurements is substantially reduced. On the other hand, the critical current density in the bulk of the grains as measured by the torque on a film is not reduced by the patterning process. It is suggested that superconductor-normal metal-superconductor junctions between the grains account for this difference.

  19. Buffer layers for high-Tc thin films on sapphire

    NASA Technical Reports Server (NTRS)

    Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

    1992-01-01

    Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

  20. Studies on interface between In2O3 and CuInTe2 thin films

    NASA Astrophysics Data System (ADS)

    Ananthan, M. R.; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

    2017-10-01

    Interface between dc sputtered In2O3 and stepwise flash evaporated CuInTe2 films were studied by probing Si/In2O3/CuInTe2 and Si/CuInTe2/In2O3 structures with the help of glancing angle X-ray diffraction, Rutherford backscattering spectrometry and micro-Raman spectroscopy. The results showed that in Si/In2O3/CuInTe2 structure, a ∼20 nm thick interface consisting of In, Cu and O had formed between In2O3 and CuInTe2 and was attributed to the diffusion of Cu from CuInTe2 into In2O3 film. On the other hand, in Si/CuInTe2/In2O3 structure, homogeneity of the underlying CuInTe2 film was found lost completely. An estimate of the masses of the constituent elements showed that the damage was caused by loss of Te from CuInTe2 film during the growth of In2O3 film on Si/CuInTe2.

  1. Theoretical calculation of electron-positron momentum density in YBa 2Cu 3O 7-δ

    NASA Astrophysics Data System (ADS)

    Massidda, S.

    1990-07-01

    We present calculations of the electron-positron momentum density for the high- Tc superconductor YBa 2Cu 3O 7-δ for δ=0 and for the insulating parent compound YBa 2Cu 3O 6, based on first-principle electronic structure calculations performed within the local density approximation (LDA) using the full potential linearized augmented plane wave (FLAPW) method. Our results indicate a small overlap of the positron wave function with the CuO 2 plane electrons and, as a consequence, relatively small signals due to the related Fermi surfaces. By contrast, the present calculations show, after the folding of Umklapp terms according to Lock, Crisp and West, clear Fermi surface breaks arising from the Cu-O chain bands. No general agreement with existing experiments allows a clear definition of Fermi surface structures in the latter. A comparison of the calculated momentum with the experimental two-dimensional angular correlation of annihilation radiation (2D-ACAR) recently measured in Geneva shows an overall agreement for the insulating compound, despite the spurious LDA metallic state, and possibly suggests the importance of O vacancies in experiments performed on non-stoichiometric YBa 2Cu 3O 7-δ samples.

  2. High-frequency response to millimeter wave irradiation of YBaCuO thin film and ceramic

    NASA Astrophysics Data System (ADS)

    Velichko, A. V.; Cherpak, N. T.; Izhyk, E. V.; Kirichenko, A. Ya.; Chukanova, I. N.

    1997-02-01

    Microwave (35 GHz) and radiowave (9 MHz) responses of an YBaCuO thin film and a ceramic to millimeter (mm) wave irradiation (31.5 GHz) have been studied by means of a quasioptical dielectric resonator with whispering gallery modes and an inductive technique at micro- and radiowaves, respectively. The responses are shown to have a mixed nature including a sufficiently strong non-bolometric component. Relaxation of the surface resistance in time after the irradiation removal obeys the logarithmic law implying the nucleation and flux creep of vortices induced by the irradiation is a mechanism of the response at temperatures 3-10 K below the critical temperature Tc. Dependence of the microwave surface resistance Rsmw on the mm wave pump amplitude Hω is well described by Halbritter's theory of vortex motion inside weak links. A correlation between dependences of the radiowave (rw) response on Hω with that of Rsmw has been found. Thus the mechanism of rw-response is believed to arise from intergranular Josephson couplings. The latter conclusion is further confirmed by a comparison of the pump power dependence of the rw-response with that of conventional DC-response found for granular HTSC in other recent experiments on the response to the subgap radiation.

  3. Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))O(y)

    NASA Technical Reports Server (NTRS)

    Bansal, N. P.

    1993-01-01

    Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder X-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

  4. Controlling BaZrO3 nanostructure orientation in YBa2Cu3O{}_{7-\\delta } films for a three-dimensional pinning landscape

    NASA Astrophysics Data System (ADS)

    Wu, J. Z.; Shi, J. J.; Baca, F. J.; Emergo, R.; Wilt, J.; Haugan, T. J.

    2015-12-01

    The orientation phase diagram of self-assembled BaZrO3 (BZO) nanostructures in c-oriented YBa2Cu3O{}7-δ (YBCO) films on flat and vicinal SrTiO3 substrates was studied experimentally with different dopant concentrations and vicinal angles and theoretically using a micromechanical model based on the theory of elasticity. The organized BZO nanostructure configuration was found to be tunable, between c-axis to ab-plane alignment, by the dopant concentration in the YBCO film matrix strained via lattice mismatched substrates. The correlation between the local strain caused by the BZO doping and the global strain on the matrix provides a unique approach for controllable growth of dopant nanostructure landscapes. In particular, a mixed phase of the c-axis-aligned nanorods and the ab-plane-aligned planar nanostructures can be obtained, leading to a three-dimensional pinning landscape with single impurity doping and much improved J c in almost all directions of applied magnetic field.

  5. Synthesis and optical characterization of ternary chalcogenide Cu3BiS3 thin film by spin coating

    NASA Astrophysics Data System (ADS)

    Rawal, Neha; Hadi, Mohammed Kamal; Modi, B. P.

    2017-05-01

    In this work, ternary Chalcogenide Cu3BiS3(CBS) thin films have been prepared and modified by using spin coating technique. Lucratively, spin coating technique is easy going and simple though it hasn't given an enclosure and extensive focus of researches for Cu3BiS3 thin films formation. The surface smoothness and the homogeneity of the obtained thin films have been optimized throughout varying the annealing temperature, concentration and rotation speed. It had been found that as prepared films the value of the energy band gap is 1.4 eV, the absorption coefficient 105 cm-1. Each values of the EBG (Energy Band Gap) and AC (Absorption coefficient) was found in quite agreement with the published work of CBS thin film formation by other methods as CBD, dip coating etc. It signifies that Cu3BiS3 films can be used as an absorber layer for thin film solar cell.

  6. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    He, Junfeng; Shafer, Padraic; Mion, Thomas R.

    Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

  7. Observation of a three-dimensional quasi-long-range electronic supermodulation in YBa 2Cu 3O 7-x/La 0.7Ca 0.3MnO 3 heterostructures

    DOE PAGES

    He, Junfeng; Shafer, Padraic; Mion, Thomas R.; ...

    2016-03-01

    Recent developments in high-temperature superconductivity highlight a generic tendency of the cuprates to develop competing electronic (charge) supermodulations. While coupled with the lattice and showing different characteristics in different materials, these supermodulations themselves are generally conceived to be quasi-two-dimensional, residing mainly in individual CuO 2 planes, and poorly correlated along the c axis. Here we observed with resonant elastic X-ray scattering a distinct type of electronic supermodulation in YBa 2Cu 3O 7–x (YBCO) thin films grown epitaxially on La 0.7Ca 0.3MnO 3 (LCMO). This supermodulation has a periodicity nearly commensurate with four lattice constants in-plane, eight out of plane, withmore » long correlation lengths in three dimensions. It sets in far above the superconducting transition temperature and competes with superconductivity below this temperature for electronic states predominantly in the CuO 2 plane. Our finding sheds light on the nature of charge ordering in cuprates as well as a reported long-range proximity effect between superconductivity and ferromagnetism in YBCO/LCMO heterostructures.« less

  8. Sol-gel deposited Cu2O and CuO thin films for photocatalytic water splitting.

    PubMed

    Lim, Yee-Fun; Chua, Chin Sheng; Lee, Coryl Jing Jun; Chi, Dongzhi

    2014-12-21

    Cu2O and CuO are attractive photocatalytic materials for water splitting due to their earth abundance and low cost. In this paper, we report the deposition of Cu2O and CuO thin films by a sol-gel spin-coating process. Sol-gel deposition has distinctive advantages such as low-cost solution processing and uniform film formation over large areas with a precise stoichiometry and thickness control. Pure-phase Cu2O and CuO films were obtained by thermal annealing at 500 °C in nitrogen and ambient air, respectively. The films were successfully incorporated as photocathodes in a photoelectrochemical (PEC) cell, achieving photocurrents of -0.28 mA cm(-2) and -0.35 mA cm(-2) (for Cu2O and CuO, respectively) at 0.05 V vs. a reversible hydrogen electrode (RHE). The Cu2O photocurrent was enhanced to -0.47 mA cm(-2) upon incorporation of a thin layer of a NiOx co-catalyst. Preliminary stability studies indicate that CuO may be more stable than Cu2O as a photocathode for PEC water-splitting.

  9. Mesure de la conductivité complexe et de la résistance de surface de films supraconducteurs YBaCuO

    NASA Astrophysics Data System (ADS)

    Mehri, F.; Lepercq, P.; Carru, J. C.; Playez, E.; Thivet, C.; Perrin, A.; Chambonnet, D.

    1994-11-01

    We describe in this paper 2 non destructive measurement methods in microwaves (18-26 GHz) well-suited to the characterization of conducting and superconducting thin films. From the experimental values we show that it is possible to infer, without any hypothesis, the following parameters : σ^*, R_s, X_s and λ between 20 K and 300 K. Some examples are given with metallic and superconducting samples from various origins. At 22 GHz and below 75 K, YBaCuO films deposited on MgO have a surface resistance inferior to bulk copper one. Dans cet article nous décrivons 2 méthodes de mesure non destructives adaptées à la caractérisation en microondes (18-26 GHz) de films minces conducteurs et supraconducteurs. A partir des valeurs expérimentales nous montrons qu'il est possible d'en déduire les grandeurs caractéristiques à savoir σ^*, R_s, X_s et λ entre 20 K et 300 K. Nous donnons des exemples de caractérisation de films métalliques et supraconducteurs provenant de différentes origines. A 22 GHz, en dessous de 75 K, les films YBaCuO déposés sur MgO ont une résistance de surface inférieure à celle du cuivre massif.

  10. Phase Evolution of YBa2Cu3O7-x films by all-chemical solution deposition route for coated conductors

    NASA Astrophysics Data System (ADS)

    Zhao, Yue; Tang, Xiao; Wu, Wei; Grivel, Jean-Claude

    2014-05-01

    In order to understand the all-chemical-solution-deposition (CSD) processes for manufacturing coated conductors, we investigated the phase evolution of YBa2Cu3O7 (YBCO) films deposited by a low-fluorine metal-organic solution deposition (LF-MOD) method on CSD derived Ce0.9La0.1O2/Gd2Zr2O7/NiW. It is shown that the phase transition from the pyrolyzed film to fully converted YBCO film in the LF-MOD process is similar to that in typical trifluoroacetates-metal organic deposition (TFA-MOD) processes even though the amount of TFA in the solution is reduced by almost one half compared with typical TFA-MOD cases. Moreover, we found that the formation of impurities (mainly BaCeO3, NiWO4 and NiO) is strongly related to the annealing temperature, i.e., the diffusion controlled reactions become intensive from 760 oC, which might be connected with the poor structural and superconducting properties of the films deposited at high sintering temperatures. Based on these results, the optimized growth conditions of YBCO films were established, and a high critical current density (Jc) of about 2 MA/cm2 (77 K, self field) is achieved in a 200 nm thick YBCO film in the architecture made by our all CSD route.

  11. Method of producing superconducting fibers of YBa[sub 2]Cu[sub 3]O[sub x

    DOEpatents

    Schwartzkopf, L.A.; Ostenson, J.E.; Finnemore, D.K.

    1990-11-13

    Fibers of YBa[sub 2]Cu[sub 3]O[sub x] have been produce by pendant drop melt extraction. This technique involves the end of a rod of YBa[sub 2]Cu[sub 3]O[sub x] melted with a hydrogen-oxygen torch, followed by lowering onto the edge of a spinning wheel. The fibers are up to 10 cm in length with the usual lateral dimensions, ranging from 20 [mu]m to 125 [mu]m. The fibers require a heat treatment to make them superconducting.

  12. Effect of Annealing Temperature on Flowerlike Cu3BiS3 Thin Films Grown by Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Deshmukh, S. G.; Patel, S. J.; Patel, K. K.; Panchal, A. K.; Kheraj, Vipul

    2017-10-01

    For widespread application of thin-film photovoltaic solar cells, synthesis of inexpensive absorber material is essential. In this work, deposition of ternary Cu3BiS3 absorber material, which contains abundant and environmentally benign elements, was carried out on glass substrate. Flowerlike Cu3BiS3 thin films with nanoflakes as building block were formed on glass substrate by chemical bath deposition. These films were annealed at 573 K and 673 K in sulfur ambient for structural improvement. Their structure was characterized using Raman spectroscopy, as well as their surface morphological and optical properties. The x-ray diffraction profile of as-deposited Cu3BiS3 thin film revealed amorphous structure, which transformed to orthorhombic phase after annealing. The Raman spectrum exhibited a characteristic peak at 290 cm-1. Scanning electron microscopy of as-deposited Cu3BiS3 film confirmed formation of nanoflowers with diameter of around 1052 nm. Wettability testing of as-deposited Cu3BiS3 thin film demonstrated hydrophobic nature, which became hydrophilic after annealing. The measured ultraviolet-visible (UV-Vis) absorption spectra of the Cu3BiS3 thin films gave an absorption coefficient of 105 cm-1 and direct optical bandgap of about 1.42 eV after annealing treatment. Based on all these results, such Cu3BiS3 material may have potential applications in the photovoltaic field as an absorber layer.

  13. Structural and optical properties of ITO and Cu doped ITO thin films

    NASA Astrophysics Data System (ADS)

    Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

    2018-04-01

    (In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

  14. Positron trapping in Y1-xPrxBa2Cu3O7-δ and the Fermi surface of YBa2Cu3O7-δ

    NASA Astrophysics Data System (ADS)

    Shukla, A.; Hoffmann, L.; Manuel, A. A.; Walker, E.; Barbiellini, B.; Peter, M.

    1995-03-01

    Temperature-dependent positron lifetime measurements in ceramic Y1-xPrxBa2Cu3O7-δ samples reveal positron trapping, in particular at low temperature and for small x. Positrons appear to be completely delocalized for T~400 K and higher. At high temperatures the lifetime for YBa2Cu3O7-δ and PrBa2Cu3O7-δ is identical (~165 ps) and close to the theoretical value. For these reasons a two-dimensional angular correlation of annihilation radiation (2D-ACAR) spectrum was measured in YBa2Cu3O7 at T=400 K. The spectrum width confirms the delocalization of the positron and the 2D-ACAR shows, apart from the one-dimensional Fermi surface due to CuO chains, a smaller Fermi surface sheet centered around the S point, in the first Brillouin zone.

  15. Temperature and depth dependence of positron annihilation parameters in YBa2Cu3O7-x and La1.85Sr0.15CuO4

    NASA Astrophysics Data System (ADS)

    Lynn, K. G.; Usmar, S. G.; Nielsen, B.; van der Kolk, G. J.; Kanazawa, I.; Sferlazzo, P.; Moodenbaugh, A. R.

    1988-02-01

    The temperature dependence of the positron annihilation parameters for YBa2Cu3O7-x x=0.7, 0.4 and 0.0 and La1.85Sr0.15CuO4 were measured. The depth dependence of the YBa2Cu3O7 was studied using a variable-energy positron beam showing a strong depth dependence in the Doppler line-shape extending up to an average depth of ˜5.0 μm. It was found that a transition in the Doppler line-shape parameter, ``S'', was associated with the superconducting transition temperature (Tc) in YBa2Cu3O7-x x=0.4 and 0.0 while no transition was observed in the nonsuperconducting YBa2Cu3O6.3. Positron lifetime parameters in YBa2Cu3O7 were found to be consistent with positrons localized at open volume regions (probably unoccupied crystallographic sites) in this material with a lifetime of 210 psec at 300 K. These results indicate that the electron density at these unoccupied sites increases, using a free electron model, approximately 9% between 100 and 12 K.

  16. Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics.

    PubMed

    Riha, Shannon C; Koegel, Alexandra A; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

    2017-02-08

    Copper antimony sulfide (CuSbS 2 ) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10 4 cm -1 ), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm -1 , as well as a hole concentration of 10 15 cm -3 . Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2 /CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.

  17. Low-temperature atomic layer deposition of CuSbS 2 for thin-film photovoltaics

    DOE PAGES

    Riha, Shannon C.; Koegel, Alexandra A.; Emery, Jonathan D.; ...

    2017-01-24

    Copper antimony sulfide (CuSbS 2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>10 4 cm –1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm –1, as wellmore » as a hole concentration of 10 15 cm –3. Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.« less

  18. Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

    2005-01-01

    Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

  19. The effects of space radiation on thin films of YBa2Cu3O(7-x)

    NASA Technical Reports Server (NTRS)

    Herschitz, R.; Bogorad, A.; Bowman, C.; Seehra, S. S.; Mogro-Campero, A.; Turner, L. G.

    1991-01-01

    This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature T(sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method used in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

  20. Sulvanite (Cu 3VS 4) nanocrystals for printable thin film photovoltaics

    DOE PAGES

    Chen, Ching -Chin; Stone, Kevin H.; Lai, Cheng -Yu; ...

    2017-09-21

    Copper Vanadium Sulfide (Cu 3VS 4), also known as sulvanite, has recently emerged as a suitable absorber material for thin film photovoltaics. The synthesis of Cu 3VS 4 nanocrystals via a rapid solvothermal route is reported for the first time. The phase purity of the Cu 3VS 4 nanocrystals has been confirmed by X-ray powder diffraction (XRD) and Raman spectroscopy, while the nanoparticle size, of about 10 nm, was evaluated by transmission electron microscopy (TEM). Successful ligand exchange with sulfide, an inorganic ligand, demonstrated that the nanoparticles are amenable to surface modifications, key element in solution processing. Further annealing ofmore » as-synthesized nanocrystals under a sulfur/argon atmosphere at 600 °C, rendered highly crystalline Cu 3VS 4 powders exhibiting an impurity that could be potentially mitigated by annealing temperature optimization. Furthermore, Cu 3VS 4, formed solely from Earth-abundant elements, could provide an inexpensive, reliable approach to fabricating solution processed thin film photovoltaic absorbers.« less

  1. Sulvanite (Cu 3VS 4) nanocrystals for printable thin film photovoltaics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chen, Ching -Chin; Stone, Kevin H.; Lai, Cheng -Yu

    Copper Vanadium Sulfide (Cu 3VS 4), also known as sulvanite, has recently emerged as a suitable absorber material for thin film photovoltaics. The synthesis of Cu 3VS 4 nanocrystals via a rapid solvothermal route is reported for the first time. The phase purity of the Cu 3VS 4 nanocrystals has been confirmed by X-ray powder diffraction (XRD) and Raman spectroscopy, while the nanoparticle size, of about 10 nm, was evaluated by transmission electron microscopy (TEM). Successful ligand exchange with sulfide, an inorganic ligand, demonstrated that the nanoparticles are amenable to surface modifications, key element in solution processing. Further annealing ofmore » as-synthesized nanocrystals under a sulfur/argon atmosphere at 600 °C, rendered highly crystalline Cu 3VS 4 powders exhibiting an impurity that could be potentially mitigated by annealing temperature optimization. Furthermore, Cu 3VS 4, formed solely from Earth-abundant elements, could provide an inexpensive, reliable approach to fabricating solution processed thin film photovoltaic absorbers.« less

  2. Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ghonge, S.G.; Goo, E.; Ramesh, R.

    1994-12-31

    TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

  3. Critical current density of TlBa 2Ca 2Cu 3O 9 thin films on MgO (100) in magnetic fields

    NASA Astrophysics Data System (ADS)

    Piehler, A.; Ströbel, J. P.; Reschauer, N.; Löw, R.; Schönberger, R.; Renk, K. F.; Kraus, M.; Daniel, J.; Saemann-Ischenko, G.

    1994-04-01

    We report on the critical current density of TlBa 2Ca 2Cu 3O 9 thin films on (100) MgO substrates in magnetic fields. Single- phase and highly c-axis oriented thin films were prepared by laser ablation in combination with thermal evaporation of Tl 2O 3. Scanning electron microscope investigations indicated a flat plate-like microstructure and DC magnetization measurements showed the onset of superconductivity at ∼ 115 K. The critical current density jc was determined from magnetization cycles. Typical values of jc were 9 × 10 5 A/cm 2 at 6 K and 2.5 × 10 5 A/cm 2 at 77 K. In a magnetic field to 1 T applied parallel to the c-axis the critical current densities were 3 × 10 5 A/cm 2 at 6 K and 3 × 10 3 A/cm 2 at 77 K. The decrease of jc at higher magnetic fields is discussed and attributed to the microstructure of the TlBa 2Ca 2Cu 3O 9 thin films.

  4. Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

    NASA Astrophysics Data System (ADS)

    Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

    2018-03-01

    To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

  5. Photoelectrochemical (PEC) studies on Cu2SnS3 (CTS) thin films deposited by chemical bath deposition method.

    PubMed

    Shelke, H D; Lokhande, A C; Kim, J H; Lokhande, C D

    2017-11-15

    Cu 2 SnS 3 (CTS) thin films have been successfully deposited on a cost-effective stainless steel substrate by simple and inexpensive chemical bath deposition (CBD) method. The films are deliberated in provisos of their structural, morphological, optical and photoelectrochemical (PEC) properties before and after annealing treatment, using various physico-chemical techniques. The XRD studies showed the formation of triclinic phase of CTS films with nanocrystalline structure. Also, the crystallinity is enhanced with annealing and the secondary phase of Cu 2 S observed. Raman analysis confirmed the formation of CTS compound with secondary Cu 2 S phase. The SEM images also discovered mostly tiny spherical grains and significant progress in the size of grains after annealing. The films possess direct transitions with band gap energies of 1.35eV and 1.31eV before and after annealing, respectively. The improved photoconversion efficiency of CTS thin film based PEC cell is explained with the help of theoretical modeling of energy band diagram and correspondent circuit model of the impedance spectra. Copyright © 2017 Elsevier Inc. All rights reserved.

  6. Modification of structural disorder by hydrostatic pressure in the superconducting cuprate YBa2Cu3O6.73

    NASA Astrophysics Data System (ADS)

    Huang, H.; Jang, H.; Fujita, M.; Nishizaki, T.; Lin, Y.; Wang, J.; Ying, J.; Smith, J. S.; Kenney-Benson, C.; Shen, G.; Mao, W. L.; Kao, C.-C.; Liu, Y.-J.; Lee, J.-S.

    2018-05-01

    Compelling efforts to improve the critical temperature (Tc) of superconductors have been made through high-pressure application. Understanding the underlying mechanism behind such improvements is critically important; however, much remains unclear. Here we studied ortho-III YBa2Cu3O6.73 (YBCO) using x-ray scattering under hydrostatic pressure (HP) up to ˜6.0 GPa . We found the reinforced oxygen order of YBCO under HP, revealing an oxygen rearrangement in the Cu-O layer, which evidently shows the charge-transfer phenomenon between the Cu O2 plane and Cu-O layer. Concurrently, we also observed no disorder-pinned charge-density-wave signature in Cu O2 plane under HP. This indicates that the oxygen rearrangement modifies the quenched disorder state in the Cu O2 plane. Using these results, we appropriately explain why pressure condition can achieve higher Tc compared with the optimal Tc under ambient pressure in YBa2Cu3O6 +x . As an implication of these results, finally we have discussed that the change in disorder could make it easier for YBa2Cu3O6 +x to undergo a transition to the nematic order under an external magnetic field.

  7. Depth profiling of superconducting thin films using rare gas ion sputtering with laser postionization

    NASA Astrophysics Data System (ADS)

    Pallix, J. B.; Becker, C. H.; Missert, N.; Char, K.; Hammond, R. H.

    1988-02-01

    Surface analysis by laser ionization (SALI) has been used to examine a high-Tc superconducting thin film of nominal composition YBa2Cu3O7 deposited on SrTiO3 (100) by reactive magnetron sputtering. The main focus of this work was to probe the compositional uniformity and the impurity content throughout the 1800 Å thick film having critical current densities of 1 to 2×106 A/cm2. SALI depth profiles show this film to be more uniform than thicker films (˜1 μm, prepared by electron beam codeposition) which were studied previously, yet the data show that some additional (non-superconducting) phases derived from Y, Ba, Cu, and O are still present. These additional phases are studied by monitoring the atomic and diatomic-oxide photoion profiles and also the depth profiles of various clusters (e.g. Y2O2+, Y2O3+, Y3O4+, Ba2O+, Ba2O2+, BaCu+, BaCuO+, YBaO2+, YSrO2+, etc.). A variety of impurities are observed to occur throughout the film including rather large concentrations of Sr. Hydroxides, F, Cl, and COx are evident particularly in the sample's near surface region (the top ˜100 Å).

  8. Characterization of Cu2ZnSnS4 thin films prepared by photo-chemical deposition

    NASA Astrophysics Data System (ADS)

    Moriya, Katsuhiko; Watabe, Jyunichi; Tanaka, Kunihiko; Uchiki, Hisao

    2006-09-01

    Cu2ZnSnS4 (CZTS) thin films were prepared by post-annealing films of metal sulfides of Cu2S, ZnS and SnS2 precursors deposited on soda-lime glass substrates by photo-chemical deposition (PCD) from aqueous solution containing CuSO4, ZnSO4, SnSO4 and Na2S2O3. In this study, sulfurization was employed to prepare high quality CZTS thin films. Deposited films of metal sulfides were annealed in a furnace in an atmosphere of N2 or N2+H2S(5%) at the temperature of 300°, 400° or 500 °C. The sulfured films showed X-ray diffraction peaks from (112), (220), and (312) planes of CZTS and the peaks became sharp by an increase in the sulfurization temperature. CZTS thin film annealed in atmosphere of N2 was S-poor. After annealing atmosphere was changed from N2 into N2+H2S(5%), the decrease of a composi- tional ratio of sulfur could be suppressed.

  9. Correlation between superfluid density and T(C) of underdoped YBa2Cu3O6+x near the superconductor-insulator transition.

    PubMed

    Zuev, Yuri; Kim, Mun Seog; Lemberger, Thomas R

    2005-09-23

    We report measurements of the ab-plane superfluid density n(s) (magnetic penetration depth lambda) of heavily underdoped films of YBa2Cu3O6+x, with T(C)'s from 6 to 50 K. We find the characteristic length for vortex unbinding transition equal to the film thickness, suggesting strongly coupled CuO2 layers. At the lowest dopings, T(C) is as much as 5 times larger than the upper limit set by the 2D Kosterlitz-Thouless-Berezinskii transition temperature calculated for individual CuO2 bilayers. Our main finding is that T(C) is not proportional to n(s)(0); instead, we find T(C) proportional to ns(1/2.3+/-0.4). This conflicts with a popular point of view that quasi-2D thermal phase fluctuations determine the transition temperature.

  10. Structural and optical studies on antimony and zinc doped CuInS2 thin films

    NASA Astrophysics Data System (ADS)

    Ben Rabeh, M.; Chaglabou, N.; Kanzari, M.; Rezig, B.

    2009-11-01

    The influence of Zn and Sb impurities on the structural, optical and electrical properties of CuInS2 thin films on corning 7059 glass substrates was studied. Undoped and Zn or Sb doped CuInS2 thin films were deposited by thermal evaporation method and annealed in vacuum at temperature of 450 ∘C Undoped thin films were grown from CuInS2 powder using resistively heated tungsten boats. Zn species was evaporated from a thermal evaporator all together to the CuInS2 powder and Sb species was mixed in the starting powders. The amount of the Zn or Sb source was determined to be in the range 0-4 wt% molecular weight compared with the CuInS2 alloy source. The films were studied by means of X-ray diffraction (XRD), Optical reflection and transmission and resistance measurements. The films thicknesses were in the range 450-750 nm. All the Zn: CuInS2 and Sb: CuInS2 thin films have relatively high absorption coefficient between 104 cm-1 and 105 cm-1 in the visible and the near-IR spectral range. The bandgap energies are in the range of 1.472-1.589 eV for Zn: CuInS2 samples and 1.396-1.510 eV for the Sb: CuInS2 ones. The type of conductivity of these films was determined by the hot probe method. Furthermore, we found that Zn and Sb-doped CuInS2 thin films exhibit P type conductivity and we predict these species can be considered as suitable candidates for use as acceptor dopants to fabricate CuInS2-based solar cells.

  11. The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

    NASA Astrophysics Data System (ADS)

    Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

    2012-06-01

    An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

  12. High-temperature change of the creep rate in YBa2Cu3O7-δ films with different pinning landscapes

    NASA Astrophysics Data System (ADS)

    Haberkorn, N.; Miura, M.; Baca, J.; Maiorov, B.; Usov, I.; Dowden, P.; Foltyn, S. R.; Holesinger, T. G.; Willis, J. O.; Marken, K. R.; Izumi, T.; Shiohara, Y.; Civale, L.

    2012-05-01

    Magnetic relaxation measurements in YBa2Cu3O7-δ (YBCO) films at intermediate and high temperatures show that the collective vortex creep based on the elastic motion of the vortex lattice has a crossover to fast creep that significantly reduces the superconducting critical current density (Jc). This crossover occurs at temperatures much lower than the irreversibility field line. We study the influence of different kinds of crystalline defects, such as nanorods, twin boundaries, and nanoparticles, on the high-temperature vortex phase diagram of YBCO films. We found that the magnetization relaxation data is a fundamental tool to understand the pinning at high temperatures. The results indicate that high Jc values are directly associated with small creep rates. Based on the analysis of the depinning temperature in films with columnar defects, our results indicate that the size of the defects is the relevant parameter that determines thermal depinning at high temperatures. Also, the extension of the collective creep regime depends on the density of the pinning centers.

  13. YBa2Cu307 superconducting microbolometer linear arrays

    NASA Astrophysics Data System (ADS)

    Johnson, Burgess R.; Ohnstein, Thomas R.; Marsh, Holly A.; Dunham, Scott B.; Kruse, Paul W.

    1992-09-01

    Single pixels and linear arrays of microbolometers employing the high-T(subscript c) superconductor YBa(subscript 2)Cu(subscript 3)O(subscript 7) have been fabricated by silicon micromachining techniques. The substrates are 3 in. diameter silicon wafers upon which buffer layers of Si(subscript 3)N(subscript 4) and yttria-stabilized zirconia (YSZ) have been deposited. The YBa(subscript 2)Cu(subscript 3)O(subscript 7) was deposited by ion beam sputtering upon the yttria-stabilized zirconia (YSZ), then photolithographically patterned into serpentines 4 micrometers wide. Anisotropic etching in KOH removed the silicon underlying each pixel, thereby providing the necessary thermal isolation. When operated at 70 degree(s)K with 1 (mu) A dc bias, the D(superscript *) is 7.5 X 10(superscript 8) cm Hz(superscript 1/2)/Watt with a thermal response time of 24 msec.

  14. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    PubMed

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  15. Donor-acceptor pair recombination luminescence from monoclinic Cu{sub 2}SnS{sub 3} thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aihara, Naoya; Tanaka, Kunihiko, E-mail: tanaka@vos.nagaokaut.ac.jp; Uchiki, Hisao

    2015-07-20

    The defect levels in Cu{sub 2}SnS{sub 3} (CTS) were investigated using photoluminescence (PL) spectroscopy. A CTS thin film was prepared on a soda-lime glass/molybdenum substrate by thermal co-evaporation and sulfurization. The crystal structure was determined to be monoclinic, and the compositional ratios of Cu/Sn and S/Metal were determined to be 1.8 and 1.2, respectively. The photon energy of the PL spectra observed from the CTS thin film was lower than that previously reported. All fitted PL peaks were associated with defect related luminescence. The PL peaks observed at 0.843 and 0.867 eV were assigned to donor-acceptor pair recombination luminescence, the thermalmore » activation energies of which were determined to be 22.9 and 24.8 meV, respectively.« less

  16. Electrodeposited CuGa(Se,Te)2 thin-film prepared from sulfate bath

    NASA Astrophysics Data System (ADS)

    Oda, Yusuke; Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro

    2006-09-01

    CuGa(Se,Te)2 (CGST) thin films were prepared on a soda-lime glass substrate sputter coated with molybdenum by electrodeposition. The aqueous solution which contained CuSO4-5H2O, Ga2(SO4)3-19.3H2O, H2SeO3, H6TeO6, Li2SO4 and gelatin was adjusted to pH 2.6 with dilute H2SO4 and NaOH. It has been observed that (i) a crack-less and smooth CGST film with a composition close to the stoichiometric ratio was deposited at -600 mV (vs. Ag/AgCl) when Te was hardly included in the film and (ii) cracks and products on the surface increased with increasing Te content in the film. Annealing at 600 °C for 10 min improved the crystallinity of the as-deposited films.

  17. Modification of structural disorder by hydrostatic pressure in the superconducting cuprate YBa 2 Cu 3 O 6.73

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huang, H.; Jang, H.; Fujita, M.

    Here, compelling efforts to improve the critical temperature (T c) of superconductors have been made through high-pressure application. Understanding the underlying mechanism behind such improvements is critically important; however, much remains unclear. Here we studied ortho-III YBa 2Cu 3O 6.73 (YBCO) using x-ray scattering under hydrostatic pressure (HP) up to ~6.0GPa. We found the reinforced oxygen order of YBCO under HP, revealing an oxygen rearrangement in the Cu-O layer, which evidently shows the charge-transfer phenomenon between the CuO 2 plane and Cu-O layer. Concurrently, we also observed no disorder-pinned charge-density-wave signature in CuO 2 plane under HP. This indicates thatmore » the oxygen rearrangement modifies the quenched disorder state in the CuO 2 plane. Using these results, we appropriately explain why pressure condition can achieve higher T c compared with the optimal T c under ambient pressure in YBa 2Cu 3O 6+x. As an implication of these results, finally we have discussed that the change in disorder could make it easier for YBa 2Cu 3O 6+x to undergo a transition to the nematic order under an external magnetic field.« less

  18. Modification of structural disorder by hydrostatic pressure in the superconducting cuprate YBa 2 Cu 3 O 6.73

    DOE PAGES

    Huang, H.; Jang, H.; Fujita, M.; ...

    2018-05-09

    Here, compelling efforts to improve the critical temperature (T c) of superconductors have been made through high-pressure application. Understanding the underlying mechanism behind such improvements is critically important; however, much remains unclear. Here we studied ortho-III YBa 2Cu 3O 6.73 (YBCO) using x-ray scattering under hydrostatic pressure (HP) up to ~6.0GPa. We found the reinforced oxygen order of YBCO under HP, revealing an oxygen rearrangement in the Cu-O layer, which evidently shows the charge-transfer phenomenon between the CuO 2 plane and Cu-O layer. Concurrently, we also observed no disorder-pinned charge-density-wave signature in CuO 2 plane under HP. This indicates thatmore » the oxygen rearrangement modifies the quenched disorder state in the CuO 2 plane. Using these results, we appropriately explain why pressure condition can achieve higher T c compared with the optimal T c under ambient pressure in YBa 2Cu 3O 6+x. As an implication of these results, finally we have discussed that the change in disorder could make it easier for YBa 2Cu 3O 6+x to undergo a transition to the nematic order under an external magnetic field.« less

  19. Fluctuation conductivity in the superconducting compound Bi1.7Pb0.3Sr2Ca2Cu3Oy

    NASA Astrophysics Data System (ADS)

    Aliev, V. M.; Ragimov, J. A.; Selim-zade, R. I.; Damirova, S. Z.; Tairov, B. A.

    2017-12-01

    A study of how the partial substitution of Bi with Pb impacts the mechanism of excess conductivity in a Bi-Sr-Ca-Cu-O system. It is found that such a substitution leads to an increase in the critical temperature of the Bi1.7Pb0.3Sr2Ca2Cu3Oy(B2) sample, in comparison to Bi2Sr2CaCu2Ox (B1) [Tc (B2) = 100.09 K and Tc (B1) = 90.5 K, respectively]. At the same time, the resistivity ρ of the sample B2 in the normal phase decreases by almost 1.5 times in comparison to B1. The mechanism responsible for the generation of excess conductivity in cuprate HTSCs Bi2Sr2CaCu2Ox and Bi1.7Pb0.3Sr2Ca2Cu3Oy is examined using the local pair model with consideration of the Aslamazov-Larkin theory, near Tc. The temperature T0 of the transition from the 2D fluctuation region to the 3D (i.e., the temperature of the 2D-3D crossover), is also determined. The coherence length ξc(0) along the c axis of fluctuation Cooper pairs is calculated. It is shown that the partial substitution of Bi with Pb in the Bi-Sr-Ca-Cu-O system leads to a decrease in ξc(0) by a factor of 1.3 (4.205 and 3.254 Å, respectively), and that there is a narrowing of both the region of pseudogap existence and the region of superconducting fluctuations near Tc. The temperature dependence of the pseudogap Δ*(T) and the value Δ*(Tc) are determined, and the temperatures Tm, which correspond to the maximum of the pseudogap as a function of temperature in these materials, are estimated. The pseudogap maxima in samples B1 and B2 are found to be 61.06 and 38.18 meV, respectively.

  20. n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

    NASA Astrophysics Data System (ADS)

    Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

    2018-03-01

    We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

  1. Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

    PubMed

    Xu, Da; Liu, Linfei; Xiao, Guina; Li, Yijie

    2013-02-27

    La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

  2. The effects of space radiation on thin films of YBa2Cu3O(sub 7-x)

    NASA Technical Reports Server (NTRS)

    Herschitz, R.; Bogorad, A.; Bowman, C.; Seehra, S. S.; Mogro-Campero, A.; Turner, L. G.

    1990-01-01

    This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature (T sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation of samples exposed to 10-Mrad in air was observed. This degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

  3. Optical Studies of Thin Film and Bulk Superconductor Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA)

    NASA Astrophysics Data System (ADS)

    Sengupta, Louise Clare

    This dissertation summarizes a systematic study of the optical properties of YBa_2Cu _3O_{7-delta } using the nondestructive techniques of spectroscopic ellipsometry, Raman scattering, and infrared absorption spectroscopy. In order to complete this research, a spectroscopic ellipsometric system has been designed and the fully automated system has been developed in this laboratory. Using the ellipsometric study, we have determined the effect of metallic replacement for Cu by Co, Fe, Ni, and Zn in YBa _2Cu_3O_ {7-delta} on the 1.7 eV electronic transition. The transition is observed in the case of doping by trivalent Co and Fe and in the case of oxygen deficiency. In all cases, it was established as result of a decrease in the hole concentration. The Raman spectra show a decrease in the frequency of the 500 cm ^{-1} mode with increase in Co and Fe concentration and an upward shift in frequency of the 435 cm^{-1} mode. These results, along with those for Ni and Zn doping are discussed in terms of the normal mode calculations for the material. The infrared phonon spectra also indicate a reduction in the electronic screening for trivalent dopants Co and Fe. All the optical experiments support evidence of the occurrence of a charge transfer mechanism in the high T_ {rm c} material YBa_2 Cu_3O in which the more insulating chains act as reservoirs of charge for the conducting copper -oxygen planes. As part of investigating the effects of orientation of the films on the optical constants of the material, studies on YBa_2Cu_3 O_{7-delta} deposited at various thicknesses on SrTiO_3 substrates have been completed using spectroscopic ellipsometry. The results indicate that the metallic behavior associated with the ab planes decreases with increasing film thickness. This behavior is well characterized by an exponential relationship between the relaxation time and the critical energy position at which the real part of the dielectric function becomes zero. The anisotropy of the

  4. Structural morphology of YBa 2Cu 3O 7- x

    NASA Astrophysics Data System (ADS)

    Sun, B. N.; Hartman, P.; Woensdregt, C. F.; Schmid, H.

    1990-03-01

    The structural morphology of YBa 2Cu 3O 7- x (YBCO) has been investigated by application of the periodic bond chain (PBC) theory. For x=1, the F forms were found to be {001}, {011}, {013}, {112} and {114}. Attachment energies have been calculated in broken bond model and in an electrostatic point charge model. For x=1 the theoretical growth habit is tabular to platy {001} with {011} as side faces. For x=0 {010} also becomes an F form. The habit is isometric with large {001} and {011} and small {010} faces. The outermost layer of {001} contains half of the Cu + ( x=1) or Cu 3+ and O 2- ( x=0) ions in an ordered arrangement based on a c(2x2) quadratic lattice. For the outermost layer of (010) ( x=0) an ordering scheme of the copper and oxygen ions is proposed. The occurrence of {010} rather than {011} on grown crystals has to be ascribed to external factors.

  5. Vibrational spectra and lattice instabilities in the high-Tc superconductors YBa2Cu3O7 and GdBa2Cu3O7

    NASA Astrophysics Data System (ADS)

    Bozović, I.; Mitzi, D.; Beasley, M.; Kapitulnik, A.; Geballe, T.; Perkowitz, S.; Carr, G. L.; Lou, B.; Sudharsanan, R.; Yom, S. S.

    1987-09-01

    The exceptionally high Tc of layered cuprates was proposed recently as originating from electronically driven structural instabilities. We have studied the infrared and Raman spectra of YBa2Cu3O7-δ and GdBa2Cu3O7-δ over a broad range of temperatures, from 10 to 300 K. We observed neither mode softening nor any other spectroscopic signature of lattice instabilities.

  6. Process for forming epitaxial perovskite thin film layers using halide precursors

    DOEpatents

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  7. Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

    NASA Astrophysics Data System (ADS)

    Xin, Peipei

    interface still limited the device performance. Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options - CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

  8. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

    PubMed

    Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-12-14

    The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

  9. Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

    NASA Astrophysics Data System (ADS)

    Klein, J. D.; Yen, A.; Clauson, S. L.

    1990-05-01

    Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

  10. CuSb(S,Se)2 thin film heterojunction photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Welch, Adam W.

    Thin film heterojunction solar cells based on CuSb(S,Se)2 absorbers are investigated for two primary reasons. First, antimony is more abundant and less expensive than elements used in current thin film photovoltaics, In, Ga, and Te, and so, successful integration of Sb based materials offers greater diversification and scalability of solar energy. Second, the CuSb(S,Se) 2 ternary is chemically, electronically, and optically similar to the well-known, high efficiency, CuIn(S,Se)2 based materials. It is therefore postulated that the copper antimony ternaries will have similar defect tolerant electronic transport that may allow for similar highly efficient photoconversion. However, CuSb(S,Se)2 forms a layered crystal structure, different from the tetrahedral coordination found in conventional solar absorbers, due to the non-bonding lone pair of electrons on the antimony site. Thus examination of 2D antimony ternaries will lend insight into the role of structure in photoconversion processes. To address these questions, the semiconductors of interest (CuSbS 2 & CuSbSe2) were first synthesized on glass by combinatorial methods, to more quickly optimize process condi- tions. Radio-frequency (RF) magnetron co-sputtering from Sb2(S,Se)3 and Cu 2(S,Se) targets were used, without rotation, to produce chemical and flux graded libraries which were then subjected to high throughput characterization of structure (XRD), composition (XRF), conductivity (4pp), and optical absorption (UV/Vis/NIR). This approach rapidly identified processes that generated phase pure material with tunable carrier concentration by applying excess Sb 2(S,Se)3 within a temperature window bound by the volatility of Sb2(S,Se)3 and stability of the ternary phase. The resulting phase pure thin films were then incor- porated into the traditional CuInGaSe2 (CIGS) substrate photovoltaic (PV) architecture, and the resulting device performance was correlated to gradients in composition, sputter flux, absorber

  11. YBa_2Cu_3O_{7-δ} : in pursuit of the ideal microstructure

    NASA Astrophysics Data System (ADS)

    Smith, D. S.; Suasmoro, S.; Lejeune, M.; Rabier, J.; Denanot, M. F.; Heintz, J. M.; Magro, C.; Bonnet, J. P.

    1992-02-01

    This paper examines the role of different factors in the microstructure of ceramic YBa2Cu3O{7-δ} with emphasis on its electrical response. In particular we discuss : 1. the effect of microstructural variations on j_c and ρ_{300}, 2. measurement of j_c, 3. the presence of minor phases and carbonates, 4. oxygen uptake and microcracks, 5. plastic deformation and related structural defects. Dans cet article, nous examinons d'une part la réponse électrique de céramiques supraconductrices massives de type YBa2Cu3O{7-δ} et d'autre part sa relation avec la microstructure. Nous présenterons successivement : 1. L'incidence de modifications microstructurales sur les valeurs de j_c et ρ_{300}, 2. les mesures expérimentales de j_c, 3. la présence de phases minoritaires et de carbonates, 4. la reprise d'oxygène et la microfissuration, 5. la déformation plastique et les défauts structuraux associés.

  12. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    NASA Astrophysics Data System (ADS)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  13. Uncovering a new quasi-2D CuO2 plane between the YBa2Cu3O7 and CeO2 buffer layer of coated conductors

    NASA Astrophysics Data System (ADS)

    Li, Zhi-Xin; Cao, Jin-Jin; Gou, Xiao-Fan; Wang, Tian-Ge; Xue, Feng

    2018-01-01

    We report a discovery of the quasi-two-dimensional (quasi-2D) CuO2 plane between the superconductor YBa2Cu3O7 (YBCO) and CeO2 buffer layer (mostly used in the fabrication) of coated conductors through the atomistic computer simulations with the molecular dynamics (MD) and first-principle calculations. For an YBCO coated conductor with multilayer structures, the buffer layers deposited onto a substrate are mainly considered to transfer a strong biaxial texture from the substrate to the YBCO layer. To deeply understand the tuning mechanism of the texture transfer, exploring the complete atomic-level picture of the structure between the YBa2Cu3O7/CeO2 interfaces is firstly required. However, the related observation data have not been available due to some big challenges of experimental techniques. With the MD simulations, having tested the accuracy of the potential functions for the YBa2Cu3O7/CeO2 interface, we constructed a total of 54 possible atom stacking models of the interface and identified its most appropriate and stable structure according to the criterion of the interface adhesion energy and the coherent characterization. To further verify the stability of the identified structure, we performed the first-principle calculations to obtain the adhesion energy and developed the general knowledge of the interface structure. Finally, a coherent interface formed with a new built quasi-2D CuO2 plane that is structurally similar to the CuO2 plane inside bulk YBCO was determined.

  14. Method of producing superconducting fibers of YBA2CU30X

    DOEpatents

    Schwartzkopf, Louis A.; Ostenson, Jerome E.; Finnemore, Douglas K.

    1990-11-13

    Fibers of YBa.sub.2 Cu.sub.3 O.sub.x have been produce by pendant drop melt extraction. This technique involves the end of a rod of YBa.sub.2 Cu.sub.3 O.sub.x melted with a hydrogen-oxygen torch, followed by lowering onto the edge of a spinning wheel. The fibers are up to 10 cm in length with the usual lateral dimensions, ranging from 20 .mu.m to 125 .mu.m. The fibers require a heat treatment to make them superconducting.

  15. Epitaxial thin films of Dirac semimetal antiperovskite Cu3PdN

    NASA Astrophysics Data System (ADS)

    Quintela, C. X.; Campbell, N.; Shao, D. F.; Irwin, J.; Harris, D. T.; Xie, L.; Anderson, T. J.; Reiser, N.; Pan, X. Q.; Tsymbal, E. Y.; Rzchowski, M. S.; Eom, C. B.

    2017-09-01

    The growth and study of materials showing novel topological states of matter is one of the frontiers in condensed matter physics. Among this class of materials, the nitride antiperovskite Cu3PdN has been proposed as a new three-dimensional Dirac semimetal. However, the experimental realization of Cu3PdN and the consequent study of its electronic properties have been hindered due to the difficulty of synthesizing this material. In this study, we report fabrication and both structural and transport characterization of epitaxial Cu3PdN thin films grown on (001)-oriented SrTiO3 substrates by reactive magnetron sputtering and post-annealed in NH3 atmosphere. The structural properties of the films, investigated by x-ray diffraction and scanning transmission electron microscopy, establish single phase Cu3PdN exhibiting cube-on-cube epitaxy (001)[100]Cu3PdN||(001)[100]SrTiO3. Electrical transport measurements of as-grown samples show metallic conduction with a small temperature coefficient of the resistivity of 1.5 × 10-4 K-1 and a positive Hall coefficient. Post-annealing in NH3 results in the reduction of the electrical resistivity accompanied by the Hall coefficient sign reversal. Using a combination of chemical composition analyses and ab initio band structure calculations, we discuss the interplay between nitrogen stoichiometry and magneto-transport results in the framework of the electronic band structure of Cu3PdN. Our successful growth of thin films of antiperovskite Cu3PdN opens the path to further investigate its physical properties and their dependence on dimensionality, strain engineering, and doping.

  16. TOPICAL REVIEW: Importance of low-angle grain boundaries in YBa2Cu3O7-δ coated conductors

    NASA Astrophysics Data System (ADS)

    Durrell, J. H.; Rutter, N. A.

    2009-01-01

    Over the past ten years the perception of grain boundaries in YBa2Cu3O7-δ conductors has changed greatly. They are now not a problem to be eliminated, but an inevitable and potentially favourable part of the material. This change has arisen as a consequence of new manufacturing techniques which result in excellent grain alignment, reducing the spread of grain boundary misorientation angles. At the same time there is considerable recent evidence which indicates that the variation of properties of grain boundaries with mismatch angle is more complex than a simple exponential decrease in critical current. This is due to the fact that low-angle grain boundaries represent a qualitatively different system to high-angle boundaries. The time is therefore right for a targeted review of research into low-angle YBa2Cu3O7-δ grain boundaries. This article does not purport to be a comprehensive review of the physics of grain boundaries as found in YBa2Cu3O7-δ in general; for a broader overview we would recommend that the reader consult the comprehensive review of Hilgenkamp and Mannhart (2002 Rev. Mod. Phys. 74 485). The purpose of this article is to review the origin and properties of the low-angle grain boundaries found in YBa2Cu3O7-δ coated conductors both individually and as a collective system.

  17. Peak effect in untwinned YBa 2Cu 3O 7-δ single crystals

    NASA Astrophysics Data System (ADS)

    D'Anna, G.; André, M.-O.; Indenbom, M. V.; Benoit, W.

    1994-12-01

    We report on the observation of a weak effect of the critical current density in untwinned YBa 2Cu 3O 7-δ single crystals of different purity, using a low frequency torsion pendulum. We construct the peak effect line and the irreversibility line.

  18. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    PubMed

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  19. CuIn(S,Se)(2) thin films prepared from a novel thioacetic acid-based solution and their photovoltaic application.

    PubMed

    Xie, Yian; Liu, Yufeng; Wang, Yaoming; Zhu, Xiaolong; Li, Aimin; Zhang, Lei; Qin, Mingsheng; Lü, Xujie; Huang, Fuqiang

    2014-04-28

    Low-cost and high-yield preparation of CuInSe2 films is the bottleneck for promising CuInSe2-based thin film solar cells. Here, we developed a simple, safe and cost-effective method using thioacetic acid to fabricate the absorber films of CuIn(S,Se)2 (CISSe). Dissolution of Cu2O and In(OH)3 in thioacetic acid was attributed to the strong coordination ability of S. The adhesive precursor solution can be prepared without any heating, centrifugation and inert gas protection, superior to the previously reported methods. The precursor CISSe layer was easily deposited in air by spin coating to ensure low cost. Uniform and compact CISSe thin films with well-crystallized and pure-phased CISSe grains were obtained after one step annealing. The as-prepared CISSe thin films were successfully applied to solar cells and a energy conversion efficiency of 6.75% was achieved. This facile preparation provides a low-cost and easy method to fabricate Cu-based thin film solar cells.

  20. Pulsed Laser Deposition Growth of Delafossite (CuFeO2) thin films and multilayers

    NASA Astrophysics Data System (ADS)

    Joshi, Toyanath; Ferrari, Piero; Borisov, Pavel; Cabrera, Alejandro; Lederman, David

    2014-03-01

    Owing to its narrow band gap (<2 eV) and p-type conductivity delafossite CuFeO2 is attractive for applications in the field of solar energy conversion. Obtaining pure phase CuFeO2 thin films, however, is relatively difficult. It is necessary to maintain the lowest possible Cu valency (+1) in order to avoid forming the comparably stable spinel compound CuFe2O4. We present a systematic study of the pulsed laser deposition (PLD) growth conditions for epitaxial (00.1) oriented CuFeO2 thin films on Al2O3 (00.1) substrates. The secondary impurity phase, CuFe2O4, was removed completely by optimizing the growth conditions. RHEED, XRD and TEM showed that the pure phase delafossite films are highly epitaxial to the substrate. The chemical purity was verified by Raman and XPS. The indirect bandgap of 1.15 eV was measured using infrared reflectivity, and is in agreement with the CuFeO2 bulk value. Finally, we discuss the growth and structural characterization of delafossite multilayers, CuFeO2/CuGaO2. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract # 2013-MA-2382) at WVU.

  1. Investigation of the Effects of Oxygen Content in YBa2Cu3Ox on the Depth and Profile of Direct Ion Milled Trenches

    DTIC Science & Technology

    2014-09-01

    fashion, thereby providing an experimental resolution previously unobtainable. Josephson junctions can be fabricated via many known methods; however... junction formation geometry. The objective of this study is to systematically investigate and de- termine the impact of local oxygen content on the ion...used advantageously in the fabrication of Josephson junction on films of YBa2Cu3O7−δ, wherein the film is annealed such that the oxygen content of the

  2. CuAlO2 and CuAl2O4 thin films obtained by stacking Cu and Al films using physical vapor deposition

    NASA Astrophysics Data System (ADS)

    Castillo-Hernández, G.; Mayén-Hernández, S.; Castaño-Tostado, E.; DeMoure-Flores, F.; Campos-González, E.; Martínez-Alonso, C.; Santos-Cruz, J.

    2018-06-01

    CuAlO2 and CuAl2O4 thin films were synthesized by the deposition of the precursor metals using the physical vapor deposition technique and subsequent annealing. Annealing was carried out for 4-6 h in open and nitrogen atmospheres respectively at temperatures of 900-1000 °C with control of heating and cooling ramps. The band gap measurements ranged from 3.3 to 4.5 eV. Electrical properties were measured using the van der Pauw technique. The preferred orientations of CuAlO2 and CuAl2O4 were found to be along the (1 1 2) and (3 1 1) planes, respectively. The phase percentages were quantified using a Rietveld refinement simulation and the energy dispersive X-ray spectroscopy indicated that the composition is very close to the stoichiometry of CuAlO2 samples and with excess of aluminum and deficiency of copper for CuAl2O4 respectively. High resolution transmission electron microscopy identified the principal planes in CuAlO2 and in CuAl2O4. Higher purities were achieved in nitrogen atmosphere with the control of the cooling ramps.

  3. Fluctuation-induced conductivity in melt-textured Pr-doped YBa2Cu3O7-δ composite superconductor

    NASA Astrophysics Data System (ADS)

    Opata, Yuri Aparecido; Monteiro, João Frederico Haas Leandro; Siqueira, Ezequiel Costa; Rodrigues, Pedro Júnior; Jurelo, Alcione Roberto

    2018-04-01

    In this study, the effects of thermal fluctuations on the electrical conductivity in melt-textured YBa2Cu3O7-δ, Y0.95Pr0.05Ba2Cu3O7-δ and (YBa2Cu3O7-δ)0.95-(PrBa2Cu3O7-δ)0.05 composite superconductor were considered. The composite superconductor samples were prepared through the top seeding method using melt-textured NdBa2Cu3O7-d seeds. The resistivity measurements were performed with a low-frequency, low-current AC technique in order to extract the temperature derivative and analyze the influence of the praseodymium ion on the normal superconductor transition and consequently on the fluctuation regimes. The results show that the resistive transition is a two-step process. In the normal phase, above the critical temperature, Gaussian and critical fluctuation regimes were identified, while below the critical temperature, in the regime near the approach to the zero-resistance state, the fluctuation conductivity diverges as expected in a paracoherent-coherent transition.

  4. Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films.

    PubMed

    Liu, Suilin; Wu, Zhiheng; Zhang, Yake; Yao, Zhiqiang; Fan, Jiajie; Zhang, Yiqiang; Hu, Junhua; Zhang, Peng; Shao, Guosheng

    2015-01-07

    We report here a reliable and reproducible single-step (without post-annealing) fabrication of phase-pure p-type rhombohedral CuAlO2 (r-CuAlO2) thin films by reactive magnetron sputtering. The dependence of crystallinity and phase compositions of the films on the growth temperature was investigated, revealing that highly-crystallized r-CuAlO2 thin films could be in situ grown in a narrow temperature window of ∼940 °C. Optical and electrical property studies demonstrate that (i) the films are transparent in the visible light region, and the bandgaps of the films increased to ∼3.86 eV with the improvement of crystallinity; (ii) the conductance increased by four orders of magnitude as the film was evolved from the amorphous-like to crystalline structure. The predominant role of crystallinity in determining CuAlO2 film properties was demonstrated to be due to the heavy anisotropic characteristics of the O 2p-Cu 3d hybridized valence orbitals.

  5. Compositional ratio effect on the surface characteristics of CuZn thin films

    NASA Astrophysics Data System (ADS)

    Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

    2018-05-01

    CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

  6. Optical contrast and laser-induced phase transition in GeCu2Te3 thin film

    NASA Astrophysics Data System (ADS)

    Saito, Yuta; Sutou, Yuji; Koike, Junichi

    2013-02-01

    Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu2Te3 film based on the reflectance of amorphous and crystalline states. The GeCu2Te3 film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge2Sb2Te5 film. The crystallization starting time of the as-deposited GeCu2Te3 film was as fast as that of the as-deposited Ge2Sb2Te5 film. Furthermore, the GeCu2Te3 crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge2Sb2Te5.

  7. Study of photoirradiation for YBa 2Cu 3O 6+ x compounds and the electron structure by positron experiment

    NASA Astrophysics Data System (ADS)

    Guosheng, Cheng; Jiaxiang, Shang; Xigui, Li; xianqi, Dai; Xizhong, Wang; Jincang, Zhang

    1997-08-01

    We present positron lifetime data of YBa 2Cu 3O 6+ x (x=0.92, 0.43) compounds for different photo-irradiation time. It is given that change of the local electron density and vacancy concentration with photoirradiation time. It is found that there is transform at the electronic structure of CuO chains. We also have discussed the effect of photoirradiations time on the electronic structure of YBa 2Cu 3O 6+ x systems and their charge reservoir layer and CuO 2 plane conduction.layer. The positron experimental results support the model of photoinduced oxygen-diffusion mechanism.

  8. Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO3 interfaces

    NASA Astrophysics Data System (ADS)

    Garcia-Barriocanal, J.; Perez-Muñoz, A. M.; Sefrioui, Z.; Arias, D.; Varela, M.; Leon, C.; Pennycook, S. J.; Santamaria, J.

    2013-06-01

    We examine the effect of interface disorder in suppressing superconductivity in coherently grown ultrathin YBa2Cu3O7 (YBCO) layers on SrTiO3 (STO) in YBCO/STO superlattices. The termination plane of the STO is TiO2 and the CuO chains are missing at the interface. Disorder (steps) at the STO interface cause alterations of the stacking sequence of the intracell YBCO atomic layers. Stacking faults give rise to antiphase boundaries which break the continuity of the CuO2 planes and depress superconductivity. We show that superconductivity is directly controlled by interface disorder outlining the importance of pair breaking and localization by disorder in ultrathin layers.

  9. The Formation, Transport Properties and Microstructure of 45 Degrees (001) Tilt Grain Boundaries in Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X) Thin Films

    NASA Astrophysics Data System (ADS)

    Vuchic, Boris Vukan

    1995-01-01

    Most high angle grain boundaries in high-T _{c} superconductors exhibit weak link behavior. The Josephson-like properties of these grain boundaries can be used for many device applications such as superconducting quantum interference devices (SQUIDs). The structure-property relationship of different types of 45 ^circ (001) YBa_2 Cu_3O_{7-x} thin film grain boundary junctions are examined to study their weak link nature. A technique, termed sputter-induced epitaxy, is developed to form 45^circ (001) tilt grain boundaries in YBa_2Cu _3O_{7-x} thin films on (100) MgO substrates. A low voltage ion bombardment pre-growth substrate treatment is used to modify the epitaxial orientation relationship between the thin film and the substrate in selected regions. By modifying the orientation of the thin film, grain boundary junctions can be placed in any configuration on the substrate. A variety of pre-growth sputtering conditions in conjunction with atomic force microscopy and Rutherford backscatter spectrometry are used to determine the role of the ions in modifying the substrate surface. Sputter-induced epitaxy is extended to a multilayer MgO/LaAlO_3 substrate, allowing integration of the sputter -induced epitaxy junctions into multilayer structures. The low temperature transport properties of the sputter-induced epitaxy junctions and a set of bi-epitaxial grain boundaries are studied. Individual grain boundaries are isolated and characterized for resistance vs. temperature, current vs. voltage as a function of temperature and magnetic field behavior. Resistive and superconducting grain boundaries are compared. Microstructural analysis is performed using scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy (HREM). Marked differences are observed in the microstructure of resistive and superconducting grain boundaries. HREM studies suggest the importance of the local atomic scale structure of the grain boundary in transport

  10. Forming YBa2Cu3O7-x Superconductors On Copper Substrates

    NASA Technical Reports Server (NTRS)

    Mackenzie, J. Devin; Young, Stanley G.

    1991-01-01

    Experimental process forms layer of high-critical-temperature ceramic superconductor YBa2Cu3O7-x on surface of copper substrate. Offers possible solution to problem of finishing ceramic superconductors to required final sizes and shapes (difficult problem because these materials brittle and cannot be machined or bent). Further research necessary to evaluate superconducting qualities of surface layers and optimize process.

  11. Physical properties of nanoparticles Nd added Bi1.7Pb0.3Sr2Ca2Cu3Oy superconductors

    NASA Astrophysics Data System (ADS)

    Abbas, Muna; Abdulridha, Ali; Jassim, Amal; Hashim, Fouad

    2018-05-01

    Bi1.7Pb0.3Sr2Ca2Cu3Oy bulks were synthesized, with the addition of Nd2O3 nanoparticles, by the solid state reaction method. The concentrations of Nd were varied from 0.1 to 0.6. The superconducting properties of the samples were investigated and studied to determine the influence of Nd2O3 addition on superconducting properties and microstructural development. The structural characteristics of the synthesized superconductor samples were carried out through X-ray diffractions. DC Four point probe method was used to study the electrical resistivity behavior and to evaluate the transition temperature (TC) for all samples. It was found that: 0.2 weight percentage of Nd2O3 yield the highest TC 123 K for highest volume fraction of 2223-phase, while excessive addition decreased both of them. The results point to compelling indications of correlations between charge carriers and superconductivity. Energy-dispersive X-ray spectroscopy (EDX) analysis for Bi1.7Pb0.3Nd0.2Sr2Ca2Cu3Oy superconductor shows that Nd may be substituted at Ca sites creating point defects, which act as flux pinning centers. Scanning electron microscopy (SEM) was employed to examine the microstructure of some samples. Their results showed precipitation of Nd nanoparticles on the surface as plate-like grains.

  12. Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

    NASA Astrophysics Data System (ADS)

    Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

    2018-03-01

    Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

  13. Processing-property relations in YBa2Cu3O(6+x) superconductors

    NASA Astrophysics Data System (ADS)

    Safari, A.; Wachtman, J. B., Jr.; Parkhe, V.; Caracciolo, R.; Jeter, D.

    Processing of YBa2Cu3O(6+x) superconducting samples by employing different precursor powder preparation techniques such as ball milling, attrition milling, and narrow particle size distribution powder preparation through coprecipitation by spraying will be discussed. CuO coated with oxalates shows the lowest resistance above Tc up to room temperature. The extent of corrosion by water has been studied by employing magnetic susceptibility, XPS, and X-ray diffraction. Superconducting samples are affected to a considerable extent when treated in water at 60 C and the severity of the attack increases with time.

  14. Investigation of thin film solar cells based on Cu2S and ternary compounds such as CuInS2

    NASA Technical Reports Server (NTRS)

    Loferski, J. J.

    1975-01-01

    Production and characterization in thin film form of Cu2S and related Cu compounds such as CuInS2 for photovoltaic cells are examined. The low cost process technology being reported, namely the sulfurization method, is capable of producing films on various substrates. Cathodoluminescence is being used as a diagnostic tool to identify Cu(x)S and CuInS2 compounds. Also, single crystals of CuInS2 are being prepared and it is contemplated that p-n junctions will be made in such crystals.

  15. Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

    NASA Astrophysics Data System (ADS)

    Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

    2018-05-01

    In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

  16. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    PubMed Central

    2011-01-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated. PMID:21711646

  17. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

    2011-12-01

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  18. Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

    PubMed

    Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

    2011-02-04

    The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

  19. Disentangling vortex pinning landscape in chemical solution deposited superconducting YBa2Cu3O7-x films and nanocomposites

    NASA Astrophysics Data System (ADS)

    Palau, A.; Vallès, F.; Rouco, V.; Coll, M.; Li, Z.; Pop, C.; Mundet, B.; Gàzquez, J.; Guzman, R.; Gutierrez, J.; Obradors, X.; Puig, T.

    2018-07-01

    In-field angular pinning performances at different temperatures have been analysed on chemical solution deposited (CSD) YBa2Cu3O7-x (YBCO) pristine films and nanocomposites. We show that with this analysis we are able to quantify the vortex pinning strength and energies, associated with different kinds of natural and artificial pinning defects, acting as efficient pinning centres at different regions of the H-T phase diagram. A good quantification of the variety of pinning defects active at different temperatures and magnetic fields provides a unique tool to design the best vortex pinning landscape under different operating conditions. We have found that by artificially introducing a unique defect in the YBCO matrix, the stacking faults, we are able to modify three different contributions to vortex pinning (isotropic-strong, anisotropic-strong, and isotropic-weak). The isotropic-strong contribution, widely studied in CSD YBCO nanocomposites, is associated with nanostrained regions induced at the partial dislocations surrounding the stacking faults. Moreover, the stacking fault itself acts as a planar defect which provides a very effective anisotropic-strong pinning at H//ab. Finally, the large presence of Cu-O cluster vacancies found in the stacking faults have been revealed as a source of isotropic-weak pinning sites, very active at low temperatures and high fields.

  20. Momentum Dependence of Charge Excitations in YBa2Cu3O7-δ and Nd2-xCexCuO4

    NASA Astrophysics Data System (ADS)

    Ishii, Kenji

    2006-03-01

    Resonant inelastic x-ray scattering (RIXS) studies at Cu K-edge on high-Tc superconducting cuprates, YBa2Cu3O7-δ and Nd2-xCexCuO4 are presented. The superconductivity occurs in the vicinity of the Mott insulating state and it is important to clarify the nature of the Mott gap and its doping dependence. Because RIXS has an advantage that we can measure charge excitation in a wide energy-momentum space, it gives a unique opportunity to study the electronic structure of materials. We apply this technique to high-Tc superconducting cuprates. In particular the electronic structure of strongly correlated metals is in the focus of our RIXS study. The experiments were performed at BL11XU of SPring-8, Japan, where a specially designed spectrometer for inelastic x-ray scattering is installed. In optimally doped YBa2Cu3O7-δ, anisotropic spectra are observed in the ab plane of a twin-free crystal. The Mott gap excitation from the one-dimensional CuO chain is enhanced at 2 eV near the zone boundary of the chain direction, while the excitation from the CuO2 plane is broad at 1.5-4 eV and almost independent of momentum. Theoretical calculation based on the one-dimensional and two-dimensional Hubbard model reproduces the observed features in the RIXS spectra when smaller values of the on-site Coulomb energy of the chain than that of the plane are assumed. This means that the charge transfer gap of the chain is smaller than that of the plane. On the other hand, both interband excitation across the Mott gap and intraband excitation in the upper Hubbard band are observed in the electron-doped Nd2-xCexCuO4. The intensity of the interband excitation is concentrated at ˜ 2 eV near the zone boundary while a dispersion relation with a momentum-dependent width emerges in the intraband excitation. The author would like to acknowledge to his collaborators, K. Tsutsui, Y. Endoh, T. Tohyama, K. Kuzushita, T. Inami, K. Ohwada, M. Hoesch, M. Tsubota, Y. Murakami, J. Mizuki, S. Maekawa, T

  1. Influence of water vapor on the formation of pinning centers in YBa2Cu3O y upon low-temperature annealing

    NASA Astrophysics Data System (ADS)

    Bobylev, I. B.; Gerasimov, E. G.; Zyuzeva, N. A.

    2017-08-01

    The influence of the double heat treatment ( T = 300 and 930°C) on the critical parameters of highly textured YBa2Cu3O6.96 and YBa2Cu3O6.8 ceramics has been investigated. It has been shown that, upon low-temperature annealing in humid air, planar stacking faults are formed in these ceramics. These defects are partly retained after reduction annealing (at T = 930°C) and are efficient pinning centers in magnetic fields applied parallel and perpendicular to the c axis. Due to the absorption of water, the oxygen content is increased in the ceramics, which is accompanied by an increase in the critical temperature of superconducting transition up to 94 K for YBa2Cu3O6.96 and up to 90 K for YBa2Cu3O6.8. Optimal conditions of the double annealing have been established, after which the critical-current density increased to j c ≥ 104 A/cm2 in an external magnetic field of up to 6 T. The low-temperature treatment in the neutral atmosphere saturated by water vapors deteriorates the current-carrying capacity of the highly textured ceramics, which is connected with the disappearance of texture due to the copper reduction and the precipitation of impurity phases.

  2. Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

    NASA Astrophysics Data System (ADS)

    Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

    2018-06-01

    Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

  3. A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

    NASA Astrophysics Data System (ADS)

    Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

    2017-12-01

    A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

  4. High crystalline CuAlS2 thin films via chemical spray pyrolysis route

    NASA Astrophysics Data System (ADS)

    Naveena, D.; Logu, T.; Sethuraman, K.; Bose, A. Chandra

    2018-04-01

    High crystalline and non-toxic CuAlS2 thin films were successfully deposited on glass substrate by chemical spray pyrolysis method. The as-prepared sample was subjected to the sulphurization at 450 °C for 30 min. The structural, morphological, optical and electrical properties of the as deposited and sulphurized films have been systematically analyzed. XRD result shows that the sulphurized sample exhibited tetragonal crystal structure with increase in crystallite size. The optical band gap was found to decrease from 3.25 eV to 3.21 eV and the carrier concentration is 4.22×1015cm-3 for the as-deposited film which rises to 6.29×1015cm-3 after sulphurizing the film in nitrogen atmosphere. The results of this study provide a framework for fabricating an optimized high crystalline CuAlS2 layer in optoelectronic devices.

  5. Structural and magnetic analysis of Cu, Co substituted NiFe2O4 thin films

    NASA Astrophysics Data System (ADS)

    Sharma, Hakikat; Bala, Kanchan; Negi, N. S.

    2016-05-01

    In the present work we prepared NiFe2O4, Ni0.95Cu0.05Fe2O4 and Ni0.94Cu0.05Co0.01 Fe2O4 thin films by metallo-organic decomposition method (MOD) using spin coating technique. The thin films were analyzed by X-ray diffractometer (XRD) and Atomic force microscope (AFM) for structural studies. The XRD patterns confirmed the ferrite phase of thin films. From AFM, we analyzed surface morphology, calculated grain size (GS) and root mean square roughness (RMSR). Room temperature magnetic properties were investigated by vibrating sample magnetometer (VSM).

  6. Effects of oxygen stoichiometry on the scaling behaviors of YBa2Cu3O(x) grain boundary weak-links

    NASA Technical Reports Server (NTRS)

    Wu, K. H.; Fu, C. M.; Jeng, W. J.; Juang, J. Y.; Uen, T. M.; Gou, Y. S.

    1995-01-01

    The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa2Cu3O(x) bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealing processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e with x = 7.0 in YBa2Cu3O(x) stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g with x = 6.9 in YBa2Cu3O(x) stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.

  7. Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

    NASA Technical Reports Server (NTRS)

    Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

    1991-01-01

    SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

  8. Isotropic enhancement in the critical current density of YBCO thin films incorporating nanoscale Y2BaCuO5 inclusions

    NASA Astrophysics Data System (ADS)

    Jha, Alok K.; Matsumoto, Kaname; Horide, Tomoya; Saini, Shrikant; Mele, Paolo; Ichinose, Ataru; Yoshida, Yutaka; Awaji, Satoshi

    2017-09-01

    The effect of incorporation of nanoscale Y2BaCuO5 (Y211) inclusions on the vortex pinning properties of YBa2Cu3O7-δ (YBCO or Y123) superconducting thin films is investigated in detail on the basis of variation of critical current density (JC) with applied magnetic field and also with the orientation of the applied magnetic field at two different temperatures: 77 K and 65 K. Surface modified target approach is employed to incorporate nanoscale Y211 inclusions into the superconducting YBCO matrix. The efficiency of Y211 nanoinclusions in reducing the angular anisotropy of critical current density is found to be significant. The observed angular dependence of the critical current density is discussed on the basis of mutually occupied volume by a vortex and spherical and/or planar defect. A dip in JC near the ab-plane is also observed which has been analyzed on the basis of variation of pinning potential corresponding to a spherical (3-D) or planar (2-D) pinning center and has been attributed to a reduced interaction volume of the vortices with a pinning center and competing nature of the potentials due to spherical and planar defects.

  9. Current-induced vortex motion and the vortex-glass transition in YBa{sub 2}Cu{sub 3}O{sub y} films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nojima, T.; Kakinuma, A.; Kuwasawa, Y.

    1997-12-01

    Measurements of current-voltage characteristics have been performed on YBa{sub 2}Cu{sub 3}O{sub y} films for two components of electric fields in the ab plane, E{sub x} and E{sub y}, in magnetic fields of the form (H{sub 0},H{sub 0},{delta}H{sub 0}), where x {parallel} the current density J, z {parallel} the c axis, and {delta}{lt}1. The simultaneous measurements of E{sub x} and E{sub y} under these conditions make it possible to analyze the situation of the vortex motion due to the Lorentz force. Our results indicate that vortices move as long-range correlated lines only below the glass transition temperature in a low-current limit.more » We also show that applying high-current density destroys line motion and induces a structural change of vortex lines in the glass state. {copyright} {ital 1997} {ital The American Physical Society}« less

  10. Anisotropy of the Irreversibility Field for Zr-doped (Y,Gd)Ba 2<\\sub>Cu3<\\sub>O<7-x<\\sub> Thin Films up to 45 T

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tarantini, C.; Jaroszynski, J.; Kametani, F.

    2011-01-01

    The anisotropic irreversibility fieldBIrr of twoYBa2Cu3O7 x thin films dopedwith additional rare earth (RE)= (Gd, Y) and Zr and containing strong correlated pins (splayed BaZrO3 nanorods and RE2O3 anoprecipitates) has been measured over a very broad range up to 45 T at temperatures 56 K < T < Tc. We found that the experimental angular dependence of BIrr ( ) does not follow the mass anisotropy scaling BIrr ( ) = BIrr (0)(cos2 + 2 sin2 ) 1/2, where = (mc/mab)1/2 = 5 6 for the RE-doped Ba2Cu3O7 x (REBCO) crystals, mab and mc are the effective masses along themore » ab plane and the c-axis, respectively, and is the angle between B and the c-axis. For B parallel to the ab planes and to the c-axis correlated pinning strongly enhances BIrr , while at intermediate angles, BIrr ( ) follows the scaling behavior BIrr ( ) (cos2 + 2 RP sin2 ) 1/2 with the effective anisotropy factor RP 3 significantly smaller than the ass anisotropy would suggest. In spite of the strong effects of c-axis BaZrO3 nanorods, we found even greater enhancements of BIrr for fields along the ab planes than for fields parallel to the c-axis, as well as different temperature dependences of the correlated pinning contributions to BIrr for B//ab and B//c. Our results show that the dense and strong pins, which can now be incorporated into REBCO thin films in a controlled way, exert major and diverse effects on the measured vortex pinning anisotropy and the irreversibility field over wide ranges of B and T . In particular, we show that the relative contribution of correlated pinning to BIrr for B//c increases as the temperature increases due to the suppression of thermal fluctuations of vortices by splayed distribution of BaZrO3 nanorods.« less

  11. Elliptical flux vortices in YBa2Cu3O7

    NASA Technical Reports Server (NTRS)

    Hickman, H.; Dekker, A. J.; Chen, T. M.

    1991-01-01

    The most energetically favorable vortex in YBa2Cu3O7 forms perpendicular to an anisotropic plane. This vortex is elliptical in shape and is distinguished by an effective interchange of London penetration depths from one axis of the ellipse to another. By generalizing qualitatively from the isotropic to the anisotropic case, we suggest that the flux flow resistivity for the vortex that forms perpendicular to an anistropic plane should have a preferred direction. Similar reasoning indicates that the Kosterlitz-Thouless transition temperature for a vortex mediated transition should be lower if the vortex is elliptical in shape.

  12. Electronic correlations in YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ from Auger spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Balzarotti, A.; De Crescenzi, M.; Giovannella, C.

    1987-12-01

    Cu L/sub 3/VV Auger spectra of the superconducting compound YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ have been measured above and below the critical temperature T/sub c/ = 90 K and compared with those of CuO. In the superconductor a localized peak whose intensity increases with temperature is found. Such a structure, lacking in copper oxide, is attributed to electronic correlations in the Cu 3d/sup 8/ configuration.

  13. Preparation, Iodometric Analysis, and Classroom Demonstration of Superconductivity in YBa2Cu3O8-x.

    ERIC Educational Resources Information Center

    Harris, Daniel C.; And Others

    1987-01-01

    Described is a student preparation of YBa2Cu3O8-x, a classroom demonstration of its superconductivity, and an analytical chemistry experiment dealing with the oxidation state of copper in the material. (RH)

  14. Multi-band magnetotransport in exfoliated thin films of Cu x Bi2Se3

    NASA Astrophysics Data System (ADS)

    Alexander-Webber, J. A.; Huang, J.; Beilsten-Edmands, J.; Čermák, P.; Drašar, Č.; Nicholas, R. J.; Coldea, A. I.

    2018-04-01

    We report magnetotransport studies in thin (<100 nm) exfoliated films of Cu x Bi2Se3 and we detect an unusual electronic transition at low temperatures. Bulk crystals show weak superconductivity with T_c∼3.5 K and a possible electronic phase transition around 200 K. Following exfoliation, superconductivity is supressed and a strongly temperature dependent multi-band conductivity is observed for T  <  30 K. This transition between competing conducting channels may be enhanced due to the presence of electronic ordering, and could be affected by the presence of an effective internal stress due to Cu intercalation. By fitting to the weak antilocalisation conductivity correction at low magnetic fields we confirm that the low temperature regime maintains a quantum phase coherence length Lφ> 100 nm indicating the presence of topologically protected surface states.

  15. Study of Substitution of Zn FOR Cu in YBa2Cu3O7 System

    NASA Astrophysics Data System (ADS)

    Sharma, P. K.; Samariya, A.; Dhawan, M. S.; Singhal, R. K.

    The polycrystalline YBa2(Cu1-XZnX)3O7-δ samples (x=0.0 to 0.06) were synthesized and studied using X Ray diffraction, titration, resistivity, magnetization and X ray photoelectron spectroscopy (XPS). Results show that O2 stoichiometry (δ) changes on Zn substitution which affects their normal state resistivity as well as the TC. Zn also induces local magnetic moment as evidenced from magnetization results. A combination of change in O2 stoichiometry and magnetic pair breaking is found to be responsible for a rapid suppression of superconductivity.

  16. Ion beam deposition of in situ superconducting Y-Ba-Cu-O films

    NASA Astrophysics Data System (ADS)

    Klein, J. D.; Yen, A.; Clauson, S. L.

    1990-01-01

    Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria-stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 80.5 K without post-deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c dimensions and low Tc's. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.

  17. A new method for measuring low resistivity contacts between silver and YBa2Cu3O(7-x) superconductor

    NASA Technical Reports Server (NTRS)

    Hsi, Chi-Shiung; Haertling, Gene H.; Sherrill, Max D.

    1991-01-01

    Several methods of measuring contact resistivity between silver electrodes and YBa2Cu3O(7-x) superconductors were investigated; including the two-point, the three point, and the lap-joint methods. The lap-joint method was found to yield the most consistent and reliable results and is proposed as a new technique for this measurement. Painting, embedding, and melting methods were used to apply the electrodes to the superconductor. Silver electrodes produced good ohmic contacts to YBa2Cu3O(7-x) superconductors with contact resistivities as low as 1.9 x 10 to the -9th ohm sq cm.

  18. Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

    1993-01-01

    A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

  19. Effect of Load-Induced Oxygen Absorption in YBa2Cu3O6 + x on Mechanical Properties of the "Polyimide-YBa2Cu3O6 + x " System

    NASA Astrophysics Data System (ADS)

    Muradov, A. D.; Kyrykbaeva, A. A.

    2018-05-01

    We have studied the effect of oxygen absorption by disperse powder fillers made of high-temperature superconductor YBa2Cu3O6 + x (YBCO) with concentrations of 0.05, 0.1, and 0.5 mass % on mechanical properties of polyimide composite materials (PCMs) in the form of films. It has been established that an adsorption boundary layer consisting of an aggregate of several transition layers with a varying structure is formed between filler particles and the matrix. A sharp increase in relative elongation (strain) Δɛ c , which is observed for a PCM with YBCO fillers in the form of a jump in the region of loads of 40-47 MPa, is due to the fact that the bonds between the matrix macromolecules and the molecules in the vicinity of the upper boundary layer are ruptured, leading to a strain jump. An increase in the filler concentration increases the rigidity of the bonds between macromolecules in the boundary layers, leads to a shift of Δɛ c to the region of low stresses, and reduces its value.

  20. Ultrahigh-Performance Cu2ZnSnS4 Thin Film and Its Application in Microscale Thin-Film Lithium-Ion Battery: Comparison with SnO2.

    PubMed

    Lin, Jie; Guo, Jianlai; Liu, Chang; Guo, Hang

    2016-12-21

    To develop a high-performance anode for thin-film lithium-ion batteries (TFBs, with a total thickness on the scale of micrometers), a Cu 2 ZnSnS 4 (CZTS) thin film is fabricated by magnetron sputtering and exhibits an ultrahigh performance of 950 mAh g -1 even after 500 cycles, which is the highest among the reported CZTS for lithium storage so far. The characterization and electrochemical tests reveal that the thin-film structure and additional reactions both contribute to the excellent properties. Furthermore, the microscale TFBs with effective footprints of 0.52 mm 2 utilizing the CZTS thin film as anode are manufactured by microfabrication techniques, showing superior capability than the analogous TFBs with the SnO 2 thin film as anode. This work demonstrates the advantages of exploiting thin-film electrodes and novel materials into micropower sources by electronic manufacture methods.

  1. Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

    PubMed

    Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

    2013-05-22

    Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

  2. The influence of different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Wang, J.; Zhu, J.; He, Y. X.

    2014-01-01

    The influence of two different locations of sputter guns on the morphological and structural properties of Cu-In-Ga precursors and Cu(In,Ga)Se2 (CIGS) thin films was investigated. All the precursors contained cauliflower-like nodules, whereas smaller subnodules were observed on the background. All the precursors revealed apparent three-layered structures, and voids were observed at the CIGS/SLG interface of Sets 1 and 2 films rather than Set 3 film. EDS results indicated that all CIGS thin films were Cu-deficient. Based on the grazing incidence X-ray diffraction (GIXRD) patterns, as-selenized films showed peaks corresponding to the chalcopyrite-type CIGS structure. Depth-resolved Raman spectra showed the formation of a dominant CIGS phase inside the films for all the as-selenized samples investigated, and of an ordered vacancy compound (OVC) phase like Cu(In,Ga)3Se5 or Cu(In,Ga)2Se3.5 at the surface and/or CIGS/SLG interface region of Sets 2 and 3 films. No evidence was obtained on the presence of an OVC phase in Set 1 CIGS film, which may be speculated that long-time annealing is contributed to suppress the growth of OVC phases. The results of the present work suggest that the metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.

  3. Trimming the electrical properties on nanoscale YBa2Cu3O7-x constrictions by focus ion beam technique

    NASA Astrophysics Data System (ADS)

    Lam, Simon K. H.; Bendavid, Avi; Du, Jia

    2017-09-01

    High temperature superconducting (HTS) nanostructure has a great potential in photon sensing at high frequency due to its fast recovery time. For maximising the coupling efficiency, the normal resistance of the nanostructure needs to be better matched to that of the thin-film antenna, which is typically few tens of ohm. We report on the fabrication of nanoscale high temperature superconducting YBa2Cu3O7-x (YBCO) constrictions using Gallium ion focus ion beam (FIB) technique. The FIB has been used to both remove the YBCO in lateral dimension and also tune its critical current and normal resistance by a combination of surface etching and implantation on the YBCO top layer. High critical current density of 2.5 MA/cm2 at 77 K can be obtained on YBCO nanobridges down to 100 nm in width. Subsequent trimming of the naobridges can lead to a normal resistance value over 50 Ω. Simulation of the Ga ion trajectory has also been performed to compare the measurement results. This method provides a simple step of fabricating nanoscale superconducting detectors such as hot electron bolometer.

  4. Thickness effect of Gd2Zr2O7 buffer layer on performance of YBa2Cu3O7-δ coated conductors

    NASA Astrophysics Data System (ADS)

    Qiu, Wenbin; Fan, Feng; Lu, Yuming; Liu, Zhiyong; Bai, Chuanyi; Guo, Yanqun; Cai, Chuanbing

    2014-12-01

    Bilayer buffer architecture of Gd2Zr2O7 (GZO)/Y2O3 was prepared on the biaxially textured tape of Ni-5 at% W (NiW) by reactive sputtering deposition technique. The buffer layer of GZO films were deposited with different thicknesses on Y2O3 seeding layer with a given thickness of 20 nm. According to the results of φ-scan, the in-plane FWHMs of GZO films decreased and then reversed with increasing thickness of GZO, which corresponded with the in-plane FWHMs and superconducting properties of YBa2Cu3O7-δ (YBCO) films. Reflection High-Energy Electron Diffraction (RHEED) was carried out to examine the surface texture of GZO films and the deteriorated surface alignment was found for thicker films. The thickness effect of GZO on performance of YBCO is the coupling result of surface texture and blocking effect caused by thickness. With the balance of these two factors, the YBCO/GZO(120 nm)/Y2O3/NiW architecture exhibit relatively high performance with the transition temperature Tc of 92 K, a transition width ΔTc below 1 K, and a critical current density Jc of 0.65 MA/cm2.

  5. Fermi surface measurements in YBa2Cu3O(7-x) and La(1.874)Sr(126)CuO4

    NASA Astrophysics Data System (ADS)

    Howell, R. H.; Sterne, P. A.; Solal, F.; Fluss, M. J.; Haghighi, H.; Kaiser, J. H.; Rayner, S. L.; West, R. N.; Liu, J. Z.; Shelton, R.

    1991-06-01

    We report new, ultra high precision measurements of the electron-positron momentum spectra of YBa2Cu3O(7-x) and La(1.874)Sr(126)CuO4. The YBCO experiments were performed on twin free, single crystals and show discontinuities with the symmetry of the Fermi surface of the CuO chain bands. Conduction band and underlying features in LSCO share the same symmetry and can only be separated with the aid of LDA calculations.

  6. Fermi surface measurements in YBa 2Cu 3O 7- x and La 1.874Sr .126CuO 4

    NASA Astrophysics Data System (ADS)

    Howell, R. H.; Sterne, P. A.; Solal, F.; Fluss, M. J.; Haghight, H.; Kaiser, J. H.; Rayner, S. L.; West, R. N.; Liu, J. Z.; Shelton, R.; Kojima, H.; Kitazawa, K.

    1991-12-01

    We report new, ultra high precision measurements of the electron-positron momentum spectra of YBa 2Cu 3O 7- x and La 1.874Sr .126CuO 4. The YBCO experiments were performed on twin free, single crystals and show discontinuities with the symmetry of the Fermi surface of the CuO chain bands. Conduction band and underlying features in LSCO share the same symmetry and can only be separated with the aid of LDA calculations.

  7. Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

    NASA Astrophysics Data System (ADS)

    Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

    2017-10-01

    Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

  8. Polyethylene glycol-assisted growth of Cu2SnS3 promising absorbers for thin film solar cell applications

    NASA Astrophysics Data System (ADS)

    Kahraman, S.; Çetinkaya, S.; Yaşar, S.; Bilican, İ.

    2014-09-01

    In this paper, we report, for the first time, the results of the polyethylene glycol- (PEG) assisted preparation and characterization of high-quality and well-crystallized Cu2SnS3 (CTS) thin films obtained using sol-gel spin-coating method and a subsequent annealing in a sulphur atmosphere. Structural, morphological, compositional, electrical and optical investigations were carried out. The X-ray diffraction patterns of the samples proved the polycrystalline nature and preferred crystallization of the films. No peak referring to other binary or ternary phases were detected in the patterns. The intensity of the preferred orientation and crystallite size of the films increased with increasing PEG content. This trend yielded an improvement in photo-transient currents of the PEG-assisted growth of CTS films. The scanning electron microscopy images revealed that the CTS films have continuous, dense and agglomeration-like morphology. Through energy dispersive X-ray spectroscopy studies, it has been deduced that the samples consist of Cu, Sn and S of which atomic percentages were consistent with Cu/Sn and S/metal initial ratios. The agglomerated morphology of the samples has been attributed to increasing PEG content. A remarkable enhancement was observed in photo-transient currents of p-n junction of the produced films along with increasing PEG content. Through resistivity-temperature measurements, three impurity level electrical activation energy values for each film were found. Optical band gap values of the films were estimated via absorbance-wavelength behaviours and decreased with increasing PEG content. It has been revealed that PEG-assisted growth of CTS thin films is a promising way to improve its photovoltaic characteristics.

  9. Subtle porosity variation in the YBa2Cu3O(7-x) high-temperature superconductor revealed by ultrasonic imaging

    NASA Technical Reports Server (NTRS)

    Roth, D. J.; Generazio, E. R.; Stang, D. B.; Hepp, A. F.

    1990-01-01

    The characterization of global porosity variation within a nominally 93-percent-dense specimen of YBa2Cu3O(7-x) high-temperature superconductor is reported. With a computer-controlled scanning system, precision ultrasonic velocity measurements were obtained at 100 micron increments over an 8- by 8-mm area of the YBa2Cu3O(7-x) specimen. The measurements were used to form a color map of velocity variation across the scanned region of the specimen. Subtle velocity variation on the order of 1 percent was observed. The specimen was shown by experimental methods to be single-phase, untextured, and free of nonuniform residual microstresses. From this knowledge and an established velocity-density relationship, a likely conclusion is that the observed velocity variations are solely due to porosity variations of similar magnitude. Locating these subtle porosity variations is critical since they can result in an order of magnitude variation in J(sub c) for dense YBCO specimens. Thus, mapping the global porosity distribution within YBa2Cu3O(7-x) may reveal regions that have poorer superconducting properties. Ultrasonic velocity results are translated into useful microstructural information for the material scientist.

  10. Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

    NASA Astrophysics Data System (ADS)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-05-01

    Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

  11. Investigation of flux penetration in YBa 2Cu 3O 7-δ filaments

    NASA Astrophysics Data System (ADS)

    Devos, P.; Buekenhoudt, A.; D'Anna, G.; André, M.-O.; Indenbom, M. V.; Benoit, W.; De Batist, R.; Cornelis, J.

    1994-12-01

    ac Susceptibility measurements using a low frequency torsion pendulum and an ac susceptometer were conducted on YBa 2Cu 3O 7-δ filaments in low magnetic dc fields (≤1T). Different dissipation peaks are observed, dependent on the temperature and the applied amplitude. The peak at low temperatures, which is of intergranular nature is studied in detail. The penetration follows the Bean model and the intergranular creep is observed.

  12. Fabrication of high quality Cu2SnS3 thin film solar cell with 1.12% power conversion efficiency obtain by low cost environment friendly sol-gel technique

    NASA Astrophysics Data System (ADS)

    Chaudhari, J. J.; Joshi, U. S.

    2018-03-01

    Cu2SnS3 (CTS) is an emerging ternery chalcogenide material with great potential application in thin film solar cells. We present here high quality Cu2SnS3 thin films using a facile spin coating method. The as deposited films of CTS were sulphurized in a graphite box using tubular furnace at 520 °C for 60 min at the rate of 2.83 °C min-1 in argon atmosphere. X-ray diffraction (XRD) and Raman spectroscopy studies confirm tetragonal phase and absence of any secondary phase in sulphurized CTS thin films. X-ray photoelectron spectroscopy (XPS) demonstrates that Cu and Sn are in +1 and +4 oxidation state respectively. Surface morphology of CTS films were analyzed by field emission scanning electron microscope and atomic force microscope (AFM), which revealed a smooth surface with roughness (RMS) of 6.32 nm for sulphurized CTS film. Hall measurements confirmed p-type conductivity with hole concentartion of sulphurized CTS thin film is of 6.5348 × 1020 cm-3. UV-vis spectra revealed a direct energy band gap varies from 1.45 eV to 1.01 eV for as-deposited and sulphurized CTS thin film respectively. Such band gap values are optimum for semiconductor material as an absorber layer of thin film solar cell. The CTS thin film solar cell had following structure: SLG/FTO/ZnO/CTS/Al with short circuit current density of (Jsc) of 11.6 mA cm-2, open circuit voltage (Voc) of 0.276 V, active area of 0.16 cm2, fill factor (FF) of 35% and power conversion efficiency of 1.12% under AM 1.5 (100 mW cm-2) illumination in simulated standard test conditions.

  13. XANES and EXAFS study of Au-substituted YBa2Cu3O(7-delta)

    NASA Technical Reports Server (NTRS)

    Ruckman, Mark W.; Hepp, Aloysius F.

    1990-01-01

    The near-edge structure (XANES) of the Au L3 and Cu K edges of YBa2Au(0.3)Cu(2.7)O(7-delta) was studied. X ray diffraction suggests that Au goes on the Cu(1) site and XANES shows that this has little effect on the oxidation state of the remaining copper. The gold L3 edge develops a white line feature whose position lies between that of trivalent gold oxide (Au2O3) and monovalent potassium gold cyanide (KAu(CN)2) and whose intensity relative to the edge step is smaller than in the two reference compounds. The L3 EXAFS for Au in the superconductor resembles that of Au2O3. However, differences in the envelope of the Fourier filtered component for the first shell suggest that the local structure of the Au in the superconductor is not equivalent to Au2O3.

  14. Critical current density of high-quality Bi2Sr2Ca2Cu3Ox thin films prepared by metalorganic chemical-vapor deposition

    NASA Astrophysics Data System (ADS)

    Yamasaki, H.; Endo, K.; Nakagawa, Y.; Umeda, M.; Kosaka, S.; Misawa, S.; Yoshida, S.; Kajimura, K.

    1992-10-01

    Critical current densities Jc were measured in as-deposited, c-axis-oriented Bi2Sr2Ca2Cu3Ox thin films with Tc values as high as 97 K, which were prepared by metalorganic chemical-vapor deposition. These films showed high Jc (≳109 A/m2) at 77.3 K in high magnetic fields (≥1 T, H∥a-b plane). The best values are 3.3×109 A/m2 at 1 T and 9.1×108 A/m2 at 8 T, which are the highest Jc for Bi-oxide thin films among those reported so far. There were no signs of weak links in the Jc(H) behavior, and the surface morphology examined by scanning electron microscopy showed no apparent grain boundaries. The values of Jc decreased sharply when the applied field deviated from the a-b plane, and went to zero at the angles where the field component in the c direction is nearly equal to the irreversibility field Hc2* parallel to the c axis. The angular dependence of Jc of these films is most reasonably explained by the theory of intrinsic pinning.

  15. Reaction of YBa2Cu3O(7-beta) with Gold, Silver, Bismuth and Lead: Substitution Chemistry and Composite Fabrication

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Gaier, James R.

    1993-01-01

    The reaction of YBa2Cu3O(7-beta) with Au, Ag, Bi, and Ph ions or metal is described. Three types of materials were produced: a well-defined series of homogeneous superconductors was obtained for Au ion substitution with little effect on T(sub c); attempted Ag and Bi ion substitution resulted in multi-phase samples with slightly enhanced T(sub c); finally, attempts to produce superconducting metal/superconducting ceramic composites with Pb and Bi powders resulted in multi-phase samples with drastically diminished superconducting properties. For Au- substituted superconductors, YBa2(Cu(l-x)Au(x))3O(7-beta), a substitution series (x = 0 - 0.1) has been synthesized. For x = 0.1 there was no change in the a and b lattice parameters (a = 3.826 A and b = 3.889 A) but a 0.06 A c axis expansion to 11.75 A was observed. The valence of Cu and Au in YBa2Au(0.3)Cu(2.7)O(7-beta) was investigated using X-ray Absorption Near-Edge Structure (XANES). X-ray studies indicate that Au goes into the Cu(l) site and Cu K edge XANES shows that this has little effect on the oxidation state of the remaining copper. A small effect on T(sub c) is observed (T(sub c) = 89 K for x = 0.10). Ag and Bi addition results in a rise in T(sub c) and a decrease in (delta)T(sub c) at low levels (x = 0.10 Ag, T(sub c) = 94 K and (delta)T(sub c) = 0.5 K; x = 0.02 Bi, T(sub c) = 94 K and (delta)T(sub c) = 1K) relative to typical values for YBa2Cu3O(7-beta) (T(sub c) = 91 K, (delta)T(sub c) = 2 K). Attempts at fabrication of Pb- and Pb(1-x)Bi(x)-superconductor composites are described. Cold pressing followed by low temperature (200 C) sintering resulted in a composite which excluded flux below 90 K but did not show zero electrical resistance until the metal (alloy) superconducting transition. X-ray diffraction showed the presence of pervoskite and metal. Processing at moderate (450 C) or high (950 C) temperatures resulted in oxygen-depleted pervoskite and/or metal oxides. These materials displayed greatly

  16. Physical Characterization of Cu-Ni-P Thin Films aiming at Cu/Cu-Ni-P Thermocouples

    NASA Astrophysics Data System (ADS)

    Tomachevski, F.; Sparvoli, M.; dos Santos Filho, S. G.

    2015-03-01

    Cu-Ni-P thin films have a high-thermoelectric power, which allows the fabrication of very sensitive heat-flux sensors based on planar technology. In this work, (100) silicon surfaces were pre-activated in a diluted hydrofluoric acid solution containing PdCl2. Following, Cu-Ni-P thin films were chemically deposited using an alkaline chemical bath containing 15 g/l NiSO4.6H2O; 0.2 g/l CuSO4.5H2O; 15 g/l Na2HPO2.H2O and 60 g/l Na3C6H5O7.2H2O at temperature of 80 °C where NH4OH was added until pH was 8.0. It was noteworthy that the stoichiometric percentages of Ni and Cu vary substantially for immersion times in the range of 1 to 3 min and they become almost stable at 50% and 35%, respectively, when the immersion time is higher than 3 min. In addition, the percentage of P remains almost constant around 1718 % for all the immersion times studied. On the other hand, the sheet resistance also varies substantially for immersion times in the range of 1 to 3 min. Based on the surface morphology, smaller grains with size in the range of 0.02 to 0.1 μm are initially grown on the silicon surface and exposed regions of silicon without deposits are also observed for immersion times in the range of 1 to 3min. Therefore, the discontinuities and non uniformities of the films are promoting, respectively, the observed behaviours of sheet resistance and stoichiometry.

  17. Improvement in Jc performance below liquid nitrogen temperature for SmBa2Cu3Oy superconducting films with BaHfO3 nano-rods controlled by low-temperature growth

    NASA Astrophysics Data System (ADS)

    Miura, S.; Yoshida, Y.; Ichino, Y.; Xu, Q.; Matsumoto, K.; Ichinose, A.; Awaji, S.

    2016-01-01

    For use in high-magnetic-field coil-based applications, the critical current density (Jc) of REBa2Cu3Oy (REBCO, where RE = rare earth) coated conductors must be isotropically improved, with respect to the direction of the magnetic field; these improvements must be realized at the operating conditions of these applications. In this study, improvement of the Jc for various applied directions of magnetic field was achieved by controlling the morphology of the BaHfO3 (BHO) nano-rods in a SmBCO film. We fabricated the 3.0 vol. % BHO-doped SmBCO film at a low growth temperature of 720 °C, by using a seed layer technique (Ts = 720 °C film). The low-temperature growth resulted in a morphological change in the BHO nano-rods. In fact, a high number density of (3.1 ± 0.1) × 103 μm-2 of small (diameter: 4 ± 1 nm), discontinuous nano-rods that grew in various directions, was obtained. In Jc measurements, the Jc of the Ts = 720 °C film in all directions of the applied magnetic field was higher than that of the non-doped SmBCO film. The Jcmin (6.4 MA/cm2) of the former was more than 6 times higher than that (1.0 MA/cm2) of the latter at 40 K, under 3 T. The aforementioned results indicated that the discontinuous BHO nano-rods, which occurred with a high number density, exerted a 3D-like flux pinning at the measurement conditions considered. Moreover, at 4.2 K and under 17 T, a flux pinning force density of 1.6 TN/m3 was realized; this value was comparable to the highest value recorded, to date.

  18. Spectrophotometric Determination of the Hole Concentration in the Superconductor YBa2Cu3O(sub 7-x)

    ERIC Educational Resources Information Center

    Hoppe, Jack I.; Malati, Mounir A.

    2005-01-01

    An experimental study of ceramic superconductors namely YBa2Cu3O(sub 7-x), which illustrates the use of spectrophotometry, based on the electronic spectra of complexes of Fe(II), Fe(III) and Cu(II) to better understand the stoichiometry of YBCO is described. The results from this experiment are in good agreement with those obtained by the…

  19. Influence of vacuum annealing on the properties of Cu2SnS3 thin films using low cost ultrasonic spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Rahaman, Sabina; Sunil, M. Anantha; Shaik, Habibuddin; Ghosh, Kaustab

    2018-05-01

    Deposition of Cu2SnS3 (CTS) thin films is successfully carried out on soda lime glass substrate using low cost ultrasonic spray pyrolysis technique. Vacuum annealing of CTS films is carried out at different temperatures 350°C, 400°C and 450°C. The present work is to study the effect of annealing temperature on the crystal structure, surface morphology and optical properties of CTS thin films. Structural studies confirm the formation of CTS phase. Raman analysis is carried out to study presence of defects with annealing temperature. Optical studies confirm that film prepared at 450°C temperature is suitable as absorber material for photovoltaic applications.

  20. Compatibilities of YBa2Cu3O(9-delta) type phase in quintenary systems Y-Ba-Cu-O-X (impurity)

    NASA Technical Reports Server (NTRS)

    Karen, P.; Braaten, O.; Fjellvag, H.; Kjekshus, A.

    1991-01-01

    Isothermal phase diagrams at various oxygen pressures were studied by powder diffraction and chemical analytical methods. The components, Y, Ba, Cu, and O (specifically O2, O2-, and O2 sup 2-) are treated, together with C (specifically CO2 and CO2 sup 2-), alkaline metals, Mg, alkaline earths, Sc, 3-d and 4-f elements. Effects of the substitutions at the structural sites of YBa2Cu3O(9-delta) on T sub c are discussed with respect to changes in crystallochemical characteristics of the substituted phase and to the nature of the substituents.

  1. Oxygen desorption from YBa2Cu3O(7-x) and Bi2CaSr2Cu2O(8 + delta) superconductors

    NASA Technical Reports Server (NTRS)

    Mesarwi, A.; Levenson, L. L.; Ignatiev, A.

    1991-01-01

    Oxygen desorption experiments from YBa2Cu3O(7-x) (YBCO) and Bi2CaSr2Cu2O(8 + delta) (BSCCO) superconductors were carried out using a quadrupole mass spectrometer for monitoring the desorbing species and X-ray photoemission spectroscopy for surface characterization. Molecular oxygen was found to desorb from both superconductors following photoirradiation with ultraviolet/optical radiation and subsequent heating at over 150 C. Both YBCO and BSCCO were found to have similar oxygen desorption rates and similar activation energies. The desorption data as well as the X-ray photoemission data indicate that the oxygen desorption is not intrinsic to the superconductors but rather due to molecular oxygen entrapped in the material.

  2. High sensitivity of positrons to oxygen vacancies and to copper-oxygen chain disorder in YBa2Cu3O(7-x)

    NASA Astrophysics Data System (ADS)

    von Stetten, E. C.; Berko, S.; Li, X. S.; Lee, R. R.; Brynestad, J.

    1988-05-01

    Temperature-dependent positron-electron momentum densities have been studied by two-dimensional angular correlation of annihilation radiation from 10 to 320 K in YBa2Cu3O(7-x) samples. The positron ground-state charge density, computed by the linearized augmented-plane-wave method, indicates that in YBa2Cu3O7 delocalized positrons sample preferentially the linear copper-oxygen chains. Positron localization due to disorder in these chains is invoked to explain the striking differences observed between superconducting (x = about 0.02) and nonsuperconducting (x = about 0.70) samples.

  3. Long-laser-pulse method of producing thin films

    DOEpatents

    Balooch, Mehdi; Olander, Donald K.; Russo, Richard E.

    1991-01-01

    A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agen The invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.

  4. CVD growth of large-grain graphene on Cu(111) thin films

    NASA Astrophysics Data System (ADS)

    Miller, David L.; Diederichsen, Kyle M.; Keller, Mark W.

    2013-03-01

    Chemical vapor deposition of graphene on polycrystalline Cu foils has produced high quality films with carrier mobility approaching that of exfoliated graphene. Growth on single-crystal films of Cu has received less attention, despite its potential advantages for graphene quality and its importance for eventual applications. This is likely due to the difficulty of obtaining large (>= 1 mm) grains in Cu thin films, as well as dewetting and roughening of Cu films at temperatures near the Cu melting point (1084 C). We found that 450 nm of Cu(111), epitaxially grown by sputtering onto Al2O3(0001), formed > 1 mm grains when annealed at 1065 C for 40 minutes in 40 Torr of Ar and 2.5 mTorr of H2. After this annealing, adding 3 mTorr of CH4 for 8 minutes produced a monolayer graphene film covering > 99 % of the Cu surface. Stopping growth after 4 minutes produced dendritic graphene islands with 6-fold symmetry and diameter of 20 μm to 100 μm . After growth, the Cu film remained smooth except for thermal grooving at grain boundaries and a few holes of diameter ~ 10 μm where Cu dewetted completely (~ 10 holes on each 5 mm x 6 mm chip).

  5. Study of the optical properties of CuAlS2 thin films prepared by two methods

    NASA Astrophysics Data System (ADS)

    Ahmad, S. M.

    2017-04-01

    CuAlS2 thin films were successfully deposited on glass substrates using two methods: chemical spray pyrolysis (CSP) and chemical bath deposition (CBD). It was confirmed from the X-ray diffraction (XRD) analysis that CSP films exhibited a polycrystalline nature while amorphous nature was diagnosed for CBD films. Also XRD analysis was utilized to compute grain size, strain and dislocation density. Surface morphology was characterized using scanning electron microscope and photomicroscope images. The optical absorption measurement revealed that the direct allowed electronic transition with band gaps 2.8 eV and 3.0 eV for CBD and CSP methods, respectively. The optical constants, such as extinction coefficient ( k), refractive index ( n), real and imaginary dielectric constants ( ɛ 1, ɛ 2) were discussed. The photoluminescence (PL) spectra of CuAlS2 thin films appeared as a single peak for each of them, and this is attributed to band-to-band transition.

  6. Comparative study of flux pinning, creep and critical currents between YBaCuO crystals with and without Y2BaCuO5 inclusions

    NASA Technical Reports Server (NTRS)

    Murakami, Masato; Gotoh, Satoshi; Fujimoto, Hiroyuki; Koshizuka, Naoki; Tanaka, Shoji

    1991-01-01

    In the Y-Ba-Cu-O system, YBa2Cu3O(x) phase is produced by the following peritectic reaction: Y2BaCuO5 + liquid yields 2YBa2Cu3O(x). Through the control of processing conditions and starting compositions, it becomes possible to fabricate large crystals containing fine Y2BaCuO5(211) inclusions. Such crystals exhibit Jc values exceeding 10000 A/sq cm at 77 K and 1T. Recently, researchers developed a novel process which can control the volume fraction of 211 inclusions. Elimination of 211 inclusions is also possible. In this study, researchers prepared YBaCuO crystals with and without 211 inclusions using the novel process, and compared flux pinning, flux creep and critical currents. Magnetic field dependence of Jc for YBaCuO crystals with and with 211 inclusions is shown. It is clear that fine 211 inclusions can contribute to flux pinning. It was also found that flux creep rate could be reduced by increasing flux pinning force. Critical current density estimates based on the conventional flux pinning theory were in good agreement with experimental results.

  7. Temperature induced CuInSe2 nanocrystal formation in the Cu2Se-In3Se2 multilayer thin films

    NASA Astrophysics Data System (ADS)

    Mohan, A.; Rajesh, S.

    2017-04-01

    The paper deals with the impact of annealing on Cu2Se-In3Se2 multilayer structure and discusses the quantum confinements. Thermal evaporation technique was used to prepare multilayer films over the glass substrates. The films were annealed at different temperatures (150 °C-350 °C) under vacuum atmosphere. The XRD pattern reveals that the films exhibit (112) peaks with CuInSe2 Chalcopyrite structure and upon annealing crystallinity improved. The grain size comes around 13-19 nm. The optical band gap value was found to be 2.21 to 2.09 eV and band gap splitting was observed for higher annealing temperatures. The increase in the band gap is related to quantum confinement effect. SEM image shows nano crystals spread over the entire surface for higher annealing temperatures. Optical absorption and PL spectra shows the blue shift during annealing. The HR-TEM shows the particle size in the nano range and which confirms the CuInSe2 nanocrystal formation. AFM image shows the rough surface with homogenous grains for the as deposited films and smooth surface for annealed films.

  8. Electrochemical and physical properties of electroplated CuO thin films.

    PubMed

    Dhanasekaran, V; Mahalingam, T

    2013-01-01

    Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

  9. Multi-functional properties of CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

    2012-09-01

    In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

  10. Characterization of Cu buffer layers for growth of L10-FeNi thin films

    NASA Astrophysics Data System (ADS)

    Mizuguchi, M.; Sekiya, S.; Takanashi, K.

    2010-05-01

    A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

  11. Chemical bath deposited ZnS buffer layer for Cu(In,Ga)Se2 thin film solar cell

    NASA Astrophysics Data System (ADS)

    Hong, Jiyeon; Lim, Donghwan; Eo, Young-Joo; Choi, Changhwan

    2018-02-01

    The dependence of Zn precursors using zinc sulfate (ZnSO4), zinc acetate (Zn(CH3COO)2), and zinc chloride (ZnCl2) on the characteristics of the chemical bath deposited ZnS thin film used as a buffer layer of Cu(In,Ga)Se2 (CIGS) thin film solar cell was studied. It is found that the ZnS film deposition rate increases with higher stability constant during decomplexation reaction of zinc ligands, which affects the crack formation and the amount of sulfur and oxygen contents within the film. The band gap energies of all deposited films are in the range of 3.40-3.49 eV, which is lower than that of the bulk ZnS film due to oxygen contents within the films. Among the CIGS solar cells having ZnS buffer layers prepared by different Zn precursors, the best cell efficiency with 9.4% was attained using Zn(CH3COO)2 precursor due to increased Voc mainly. This result suggests that [Zn(NH3)4]2+ complex formation should be well controlled to attain the high quality ZnS thin films.

  12. Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells.

    PubMed

    Steichen, Marc; Thomassey, Matthieu; Siebentritt, Susanne; Dale, Phillip J

    2011-03-14

    The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.

  13. Effect of preparation conditions on the properties of Cu3BiS3 thin films grown by a two - step process

    NASA Astrophysics Data System (ADS)

    Mesa, F.; Gordillo, G.

    2009-05-01

    Cu3BiS3 thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu3BiS3 phase. It was also found that the Cu3BiS3 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

  14. Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

    NASA Astrophysics Data System (ADS)

    Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

    1994-09-01

    The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

  15. Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

    PubMed Central

    Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

    2017-01-01

    P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

  16. Transport properties of ultrathin YBa2Cu3O7 -δ nanowires: A route to single-photon detection

    NASA Astrophysics Data System (ADS)

    Arpaia, Riccardo; Golubev, Dmitri; Baghdadi, Reza; Ciancio, Regina; Dražić, Goran; Orgiani, Pasquale; Montemurro, Domenico; Bauch, Thilo; Lombardi, Floriana

    2017-08-01

    We report on the growth and characterization of ultrathin YBa2Cu3O7 -δ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have also been successfully fabricated. The nanowires protected by a Au capping layer show superconducting properties close to the as-grown films and critical current densities, which are limited by only vortex dynamics. The 10-nm-thick YBCO nanowires without the Au capping present hysteretic current-voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. We associate such bistability to the presence of localized normal domains within the superconductor. The presence of the voltage switch in ultrathin YBCO nanostructures, characterized by high sheet resistance values and high critical current values, makes our nanowires very attractive devices to engineer single-photon detectors.

  17. Effect of annealing atmosphere on properties of Cu2ZnSn(S,Se)4 thin films

    NASA Astrophysics Data System (ADS)

    Xue, Yuming; Yu, Bingbing; Li, Wei; Feng, Shaojun; Wang, Yukun; Huang, Shengming; Zhang, Chao; Qiao, Zaixiang

    2017-12-01

    Earth-abundant Cu2ZnSn(S,Se)4(CZTSSe) thin film photovoltaic absorber layers were fabricated by co-evaporated Cu, ZnS, SnS and Se sources in a vacuum chamber followed by annealing at tubular furnace for 30 min at 550 °C. In this paper, we investigated the metal elements with stoichiometric ratio film to study the effect of annealing conditions of Se, SnS + Se, S and SnS + S atmosphere on the structure, surface morphological, optical and electrical properties of Cu2ZnSn(S,Se)4 thin films respectively. These films were characterized by Inductively Coupled Plasma-Mass Spectrometer, scanning electron microscopy, X-ray diffraction to investigate the composition, morphological and crystal structural properties. The grain size of samples were found to increase after annealing. XRD patterns confirmed the formation of pure polycrystalline CZTSSe thin films at S atmosphere, the optical band gaps are 1.02, 1.05, 1.23, 1.35 eV for Se, SnS + Se, SnS + S and S atmosphere respectively.

  18. Mechanical properties and microstructures of Al-Cu Thin films with various heat treatments

    NASA Astrophysics Data System (ADS)

    Joo, Young-Chang

    1998-10-01

    The relationship between microstructure and mechanical properties has been investigated in Al-Cu thin films. The Cu content in Al-Cu samples used in this study ranges from 0 to 2 wt.% and substrate curvature measurement was used to measure film stress. In thin films, the constraints on the film by the substrate influence the microstructure and mechanical properties. Al-Cu thin films cooled from high temperatures have a large density of dislocations due to the plastic deformation caused by the thermal mismatch between the film and substrate. The high density of dislocations in the thin film enables precipitates to form inside the grain even during a very rapid quenching. The presence of a large density of dislocations and precipitates will in turn cause precipitation hardening of the Al-Cu films. The precipitation hardening is dominant at lower temperatures, and solid solution hardening is observed at higher temperatures in the tensile regime. Pure Al films showed the same values of tensile and compressive yield stresses at a given temperature during stress-temperature cycling.

  19. Heteroepitaxial Cu 2O thin film solar cell on metallic substrates

    DOE PAGES

    Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; ...

    2015-11-06

    Heteroepitaxial, single-crystal-like Cu 2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu 2O films on low cost, flexible, textured metallic substrates. Cu 2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu 2O phase without any trace of CuO phase is only formed in a limited deposition window of P(Omore » 2) - temperature. The (00l) single-oriented, highly textured, Cu 2O films deposited under optimum P(O 2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40-60 cm 2 V -1 s -1 and carrier concentration over 10 16 cm -3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu 2O solar cell based on epitaxial Cu 2O film prepared on the textured metal substrate.« less

  20. Heteroepitaxial Cu2O thin film solar cell on metallic substrates

    PubMed Central

    Wee, Sung Hun; Huang, Po-Shun; Lee, Jung-Kun; Goyal, Amit

    2015-01-01

    Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser deposition under various processing conditions to study the influence of processing parameters on the structural and electronic properties of the films. It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is only formed in a limited deposition window of P(O2) - temperature. The (00l) single-oriented, highly textured, Cu2O films deposited under optimum P(O2) - temperature conditions exhibit excellent electronic properties with carrier mobility in the range of 40–60 cm2 V−1 s−1 and carrier concentration over 1016 cm−3. The power conversion efficiency of 1.65% is demonstrated from a proof-of-concept Cu2O solar cell based on epitaxial Cu2O film prepared on the textured metal substrate. PMID:26541499

  1. Low energy electron beam processing of YBCO thin films

    NASA Astrophysics Data System (ADS)

    Chromik, Š.; Camerlingo, C.; Sojková, M.; Štrbík, V.; Talacko, M.; Malka, I.; Bar, I.; Bareli, G.; Jung, G.

    2017-02-01

    Effects of low energy 30 keV electron irradiation of superconducting YBa2Cu3O7-δ thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 - 4 × 1020 electrons/cm2, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 1020 electrons/cm2. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cusbnd O chains that results in increased carrier's concentration in superconducting CuO2 planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

  2. Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

    NASA Astrophysics Data System (ADS)

    AlHammad, M. S.

    2017-05-01

    We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

  3. The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

    2017-11-01

    The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

  4. The role of a-axis grains in the transition to the normal state of YBa{sub 2}Cu{sub 3}O{sub 7−δ} films and of 2G-coated conductors when induced by high electrical current densities

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bernstein, P., E-mail: pierre.bernstein@ensicaen.fr; Harnois, C.; Mc Loughlin, C.

    The influence of surface defects, in particular of a-axis grains, on the transition to the normal state induced by high current densities in YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) thin films and in a commercial 2G-coated conductor is investigated. For that purpose, the surface of the samples is observed by scanning electron microscopy and isothermal current-voltage curves are measured at different temperatures with pulsed currents up to the quenching value I*. The results show that the ratio of I* to the critical current is large if a-axis grains are not visible at the surface of the YBCO films, while it ismore » much lower if the surface includes a-axis grains as this is the case for the coated conductor. The connection between the transition onset and the vortex dynamics, as well as the role of the a-axis grains in this process are discussed. The relation between the I* values obtained from thermal calculations and those resulting from vortex dynamics considerations is also discussed, as well as the possible consequences suggested by this work for the different applications of the coated conductors.« less

  5. Recent advances in characterization of CaCu3Ti4O12 thin films by spectroscopic ellipsometric metrology.

    PubMed

    Lo Nigro, Raffaella; Malandrino, Graziella; Toro, Roberta G; Losurdo, Maria; Bruno, Giovanni; Fragalà, Ignazio L

    2005-10-12

    CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) and Pt/TiO2/SiO2/Si(100) substrates by a novel MOCVD approach. Epitaxial CCTO(001) thin films have been obtained on LaAlO3(100) substrates, while polycrystalline CCTO films have been grown on Pt/TiO2/SiO2/Si(100) substrates. Surface morphology and grain size of the different nanostructured deposited films were examined by AFM, and spectroscopic ellipsometry has been used to investigate the electronic part of the dielectric constant (epsilon2). Looking at the epsilon2 curves, it can be seen that by increasing the film structural order, a greater dielectric response has been obtained. The measured dielectric properties accounted for the ratio between grain volumes and grain boundary areas, which is very different in the different structured films.

  6. Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film

    NASA Astrophysics Data System (ADS)

    Zhang, Lin Rui; Li, Tong; Wang, Hao; Pang, Wei; Chen, Yi Chuan; Song, Xue Mei; Zhang, Yong Zhe; Yan, Hui

    2018-02-01

    In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag+ ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag+ ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential.

  7. Back surface studies of Cu(In,Ga)Se2 thin film solar cells

    NASA Astrophysics Data System (ADS)

    Simchi, Hamed

    Cu(In,Ga)Se2 thin film solar cells have attracted a lot of interest because they have shown the highest achieved efficiency (21%) among thin film photovoltaic materials, long-term stability, and straightforward optical bandgap engineering by changing relative amounts of present elements in the alloy. Still, there are several opportunities to further improve the performance of the Cu(In,Ga)Se2 devices. The interfaces between layers significantly affect the device performance, and knowledge of their chemical and electronic structures is essential in identifying performance limiting factors. The main goal of this research is to understand the characteristics of the Cu(In,Ga)Se2-back contact interface in order to design ohmic back contacts for Cu(In,Ga)Se2-based solar cells with a range of band gaps and device configurations. The focus is on developing either an opaque or transparent ohmic back contact via surface modification or introduction of buffer layers in the back surface. In this project, candidate back contact materials have been identified based on modeling of band alignments and surface chemical properties of the absorber layer and back contact. For the first time, MoO3 and WO 3 transparent back contacts were successfully developed for Cu(In,Ga)Se 2 solar cells. The structural, optical, and surface properties of MoO 3 and WO3 were optimized by controlling the oxygen partial pressure during reactive sputtering and post-deposition annealing. Valence band edge energies were also obtained by analysis of the XPS spectra and used to characterize the interface band offsets. As a result, it became possible to illuminate of the device from the back, resulting in a recently developed "backwall superstrate" device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices in the absorber thickness range 0.1-0.5 microm. Further enhancements were achieved by introducing moderate amounts of Ag into the Cu(In,Ga)Se2 lattice during the co-evaporation method

  8. Phase compatibilities of YBa2Cu3O(9-delta) type structure in quintenary systems Y-Ba-Cu-O-X (impurity)

    NASA Technical Reports Server (NTRS)

    Karen, P.; Fjellvag, H.; Kjekshus, A.

    1990-01-01

    Electrical transport properties of the oxidic high T(sub c) superconductors are significantly affected by the presence of minor amounts of various elements adventing as impurities, e.g., from the chemical environment during manufacturing. YBa2Cu3O(9-delta) is prone to an extinction of the superconductivity on (partial) substitution of all four elemental components. E.g., Pr (for Y), La (for Ba), Zn (for Cu) or peroxygroup (for O) substituents will alter some of the superconductivity preconditions, like mixed valence state in Cu3O7/O(9-delta) network or structural distortion of the network. Although various pseudoternary chemical equilibrium phase diagrams of the Y(O)-Ba(O)-Cu(O) system now are available, no consensus is generally shown, however, this is partly due to lack of compatible definitions of the equilibrium conditions. Less information is available about the phase compatibilities in the appropriate quaternary phase diagram (including oxygen) and virtually no information exists about any pentenary phase diagrams (including one impurity). Unfortunately, complexity of such systems, stemming both from number of quaternary or pentenary compounds and from visualizing the five-component phase system, limits this presentation to more or less close surroundings of the YBa2Cu3O(9-delta) type phase in appropriate pseudoquaternary or pseudopseudoternary diagrams, involving Y-Ba-Cu and O, O-CO2, alkaline metals, Mg and alkaline earths, and Sc and most of the 3-d and 4-f elements. The systems were investigated by means of x ray diffraction, neutron diffraction and chemical analytical methods on samples prepared by sol-gel technique from citrates. The superconductivity was characterized by measuring the diamagnetic susceptibility by SQUID.

  9. Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

    PubMed

    Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

    2014-03-28

    In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

  10. Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

    NASA Technical Reports Server (NTRS)

    Valco, G. J.; Rohrer, N. J.; Warner, J. D.; Bhasin, K. B.

    1989-01-01

    The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

  11. Structural and magnetic analysis of Cu, Co substituted NiFe{sub 2}O{sub 4} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sharma, Hakikat; Bala, Kanchan; Negi, N. S.

    2016-05-23

    In the present work we prepared NiFe{sub 2}O{sub 4}, Ni{sub 0.95}Cu{sub 0.05}Fe{sub 2}O{sub 4} and Ni{sub 0.94}Cu{sub 0.05}Co{sub 0.01} Fe{sub 2}O{sub 4} thin films by metallo-organic decomposition method (MOD) using spin coating technique. The thin films were analyzed by X-ray diffractometer (XRD) and Atomic force microscope (AFM) for structural studies. The XRD patterns confirmed the ferrite phase of thin films. From AFM, we analyzed surface morphology, calculated grain size (GS) and root mean square roughness (RMSR). Room temperature magnetic properties were investigated by vibrating sample magnetometer (VSM).

  12. Preparation of TlBa2Ca2Cu3O9±δ high Tc thin films by laser ablation in combination with thermal evaporation of thallium oxide

    NASA Astrophysics Data System (ADS)

    Piehler, A.; Löw, R.; Betz, J.; Schönberger, R.; Renk, K. F.

    1993-11-01

    TlBa2Ca2Cu3O9±δ high Tc thin films were prepared on MgO <100> surfaces by a combination of laser ablation from a stoichiometric Ba2Ca2Cu3Ox target and the thermal evaporation of thallium oxide. X-ray diffraction measurements showed that the films consisted of predominantly c axis oriented TlBa2Ca2Cu3O9±δ, and scanning electron microscopy revealed that the surfaces had a flat, platelike morphology. The ac inductive measurements indicated that the onset of superconductivity occurred at 117 K with a transition width (10%-90%) of ˜3 K. Zero resistivity was reached at 120 K. The critical current density was ˜3×104 A/cm2 at 110 K.

  13. Photon induced facile synthesis and growth of CuInS2 absorber thin film for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Singh, Manjeet; Jiu, Jinting; Suganuma, Katsuaki

    2016-04-01

    In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS2 (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In2S3 to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm2 is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

  14. Chemical spray pyrolyzed kesterite Cu2ZnSnS4 (CZTS) thin films

    NASA Astrophysics Data System (ADS)

    Khalate, S. A.; Kate, R. S.; Deokate, R. J.

    2018-04-01

    Pure kesterite phase thin films of Cu2ZnSnS4 (CZTS) were synthesized at different substrate temperatures using sulphate precursors by spray pyrolysis method. The significance of synthesis temperature on the structural, morphological and optical properties has been studied. The X-ray analysis assured that synthesized CZTS thin films showing pure kesterite phase. The value of crystallite size was found maximum at the substrate temperature 400 °C. At the same temperature, microstructural properties such as dislocation density, micro-strain and stacking fault probability were found minimum. The morphological examination designates the development of porous and uniform CZTS thin films. The synthesized CZTS thin films illustrate excellent optical absorption (105 cm-1) in the visible band and the optical band gap varies in the range of 1.489 eV to 1.499 eV.

  15. Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance

    NASA Astrophysics Data System (ADS)

    Van Toan, Nguyen; Chien, Nguyen Viet; Van Duy, Nguyen; Vuong, Dang Duc; Lam, Nguyen Huu; Hoa, Nguyen Duc; Van Hieu, Nguyen; Chien, Nguyen Duc

    2015-01-01

    The detection of H2S, an important gaseous molecule that has been recently marked as a highly toxic environmental pollutant, has attracted increasing attention. We fabricate a wafer-scale SnO2 thin film sensitized with CuO islands using microelectronic technology for the improved detection of the highly toxic H2S gas. The SnO2-CuO island sensor exhibits significantly enhanced H2S gas response and reduced operating temperature. The thickness of CuO islands strongly influences H2S sensing characteristics, and the highest H2S gas response is observed with 20 nm-thick CuO islands. The response value (Ra/Rg) of the SnO2-CuO island sensor to 5 ppm H2S is as high as 128 at 200 °C and increases nearly 55-fold compared with that of the bare SnO2 thin film sensor. Meanwhile, the response of the SnO2-CuO island sensor to H2 (250 ppm), NH3 (250 ppm), CO (250 ppm), and LPG (1000 ppm) are low (1.3-2.5). The enhanced gas response and selectivity of the SnO2-CuO island sensor to H2S gas is explained by the sensitizing effect of CuO islands and the extension of electron depletion regions because of the formation of p-n junctions.

  16. Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie

    A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. Themore » details of the results will be discussed in the conference.« less

  17. Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

    PubMed

    Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

    2018-03-28

    An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

  18. Micro-Raman study of isotope substitution in YBa2Cu183O6.2 during local laser annealing

    NASA Astrophysics Data System (ADS)

    Ivanov, V. G.; Iliev, M. N.; Thomsen, C.

    1995-11-01

    The local laser heating of YBa2Cu183O6.2 in air was used to study the oxygen diffusion and oxygen ordering in sample volumes of the order of a few μm3. Raman microprobe at points corresponding to different annealing temperatures was applied to monitor both the stages of substitution of 16O for 18O at different oxygen sites and the structural changes in the basal [Cu(1)-O(1)] planes occurring during the oxygen in-diffusion. The population of the O(1) sites initially results in the formation of short Cu(1)-O(1) fragments which later conjunct into long chains. The results can be applied for a better understanding of oxygen reordering processes in YBa2Cu3O7-δ during thermal treatment.

  19. Room temperature degradation of YBa2Cu3O(7-x) superconductors in varying relative humidity environments

    NASA Technical Reports Server (NTRS)

    Hooker, M. W.; Wise, S. A.; Carlberg, I. A.; Stephens, R. M.; Simchick, R. T.; Farjami, A.

    1993-01-01

    An aging study was performed to determine the stability of YBa2Cu3O(7-x) ceramics in humid environments at 20 C. In this study, fired ceramic specimens were exposed to humidity levels ranging from 30.5 to 100 percent for 2-, 4-, and 6-week time intervals. After storage under these conditions, the specimens were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and electrical resistance measurements. At every storage condition evaluated, the fired ceramics were found to interact with H2O present in the surrounding environment, resulting in the decomposition of the YBa2Cu3O(7-x) phase. XRD data showed that BaCO3, CuO, and Y2BaCuO5 were present after aging and that the peak intensities of these impurity phases increased both with increasing humidity level and with increasing time of exposure. Additionally, SEM analyses of the ceramic microstructures after aging revealed the development of needle-like crystallites along the surface of the test specimens after aging. Furthermore, the superconducting transition temperature T(sub c) was found to decrease both with increasing humidity level and with increasing time of exposure. All the specimens aged at 30.5, 66, and 81 percent relative humidity exhibited superconducting transitions above 80 K, although these values were reduced by the exposure to the test conditions. Conversely, the specimens stored in direct contact with water (100 percent relative humidity) exhibited no superconducting transitions.

  20. Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Nandur, Abhishek S.

    Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (< 2 mum in total film thickness) coupled with fast, low-cost production processes make them an ideal alternative to Si (>15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

  1. Phase and electrical properties of PZT thin films embedded with CuO nano-particles by a hybrid sol-gel route

    NASA Astrophysics Data System (ADS)

    Sreesattabud, Tharathip; Gibbons, Brady J.; Watcharapasorn, Anucha; Jiansirisomboon, Sukanda

    2013-07-01

    Pb(Zr0.52Ti0.48)O3 or PZT thin films embedded with CuO nano-particles were successfully prepared by a hybrid sol-gel process. In this process, CuO (0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1 wt. %) nanopowder was suspended in an organometallic solution of PZT, and then coated on platinised silicon substrate using a spin-coating technique. The influence of CuO nano-particles' dispersion on the phase of PZT thin films was investigated. XRD results showed a perovskite phase in all films. At the CuO concentration of 0.4-1 wt. %, a second phase was observed. The addition of CuO nano-particles affected the orientation of PZT thin films. The addition was also found to reduce the ferroelectric properties of PZT thin films. However, at 0.2 wt. % CuO concentration, the film exhibited good ferroelectric properties similar to those of PZT films. In addition, the fatigue retention properties of the PZT/CuO system was observed, and it showed 14% fatigue at 108 switching bipolar pulse cycles while the fatigue in PZT thin films was found to be 17% at the same switching bipolar pulse cycles.

  2. Effects of oxygen stoichiometry on the scaling behaviors of YBa{sub 2}Cu{sub 3}O{sub x} grain boundary weak-links

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, K.H.; Fu, C.M.; Jeng, W.J.

    1994-12-31

    The effects of oxygen stoichiometry on the transport properties of the pulsed laser deposited YBa{sub 2}Cu{sub 3}O{sub x} bicrystalline grain boundary weak-link junctions were studied. It is found that not only the cross boundary resistive transition foot structure can be manipulated repeatedly with oxygen annealling processes but the junction behaviors are also altered in accordance. In the fully oxygenated state i.e. with x=7.0 in YBa{sub 2}Cu{sub 3}O{sub x} stoichiometry, the junction critical current exhibits a power of 2 scaling behavior with temperature. In contrast, when annealed in the conditions of oxygen-deficient state (e.g. with x=6.9 in YBa{sub 2}Cu{sub 3}O{sub x}more » stoichiometry) the junction critical current switches to a linear temperature dependence behavior. The results are tentatively attributed to the modification of the structure in the boundary area upon oxygen annealing, which, in turn, will affect the effective dimension of the geometrically constrained weak-link bridges. The detailed discussion on the responsible physical mechanisms as well as the implications of the present results on device applications will be given.« less

  3. Chemical durability of high-temperature superconductor YBa2Cu3O(7-x) in aqueous environments

    NASA Technical Reports Server (NTRS)

    Bansal, Narottam P.; Sandkuhl, Ann L.

    1988-01-01

    The stability of YBa2Cu3O(7-x) in water and 100-percent humidity has been investigated at three temperatures, using pH measurements, X-ray diffraction, and scanning electron microscopy. The oxide-ceramic superconductor is highly unstable; it reacts rapidly with water and degrades in moisture. Dissolution of the oxide perovskite in water is highly incongruent. The corrosion products are found to be BaCO3, CuO, O2, etc. Barium hydroxide is first formed and further reacts with atmospheric CO2 to form needle-shaped crystals of BaCO3. For any practical applications, devices made from these materials would have to be protected with an impermeable coating to prevent deterioration from atmosphere.

  4. Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

    NASA Astrophysics Data System (ADS)

    Nandur, Abhishek; White, Bruce

    2014-03-01

    CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

  5. Distribution of flux-pinning energies in YBa2Cu3O(7-delta) and Bi2Sr2CaCu2O(8+delta) from flux noise

    NASA Astrophysics Data System (ADS)

    Ferrari, M. J.; Johnson, Mark; Wellstood, Frederick C.; Clarke, John; Mitzi, D.

    1990-01-01

    The spectral density of the magnetic flux noise measured in high-temperature superconductors in low magnetic fields scales approximately as the inverse of the frequency and increases with temperature. The temperature and frequency dependence of the noise are used to determine the pinning energies of individual flux vortices in thermal equilibrium. The distribution of pinning energies below 0.1 eV in YBa(2)Cu(3)O(7-delta) and near 0.2 eV in Bi(2)Sr(2)CaCu(2)O(8+delta). The noise power is proportional to the ambient magnetic field, indicating that the vortex motion is uncorrelated.

  6. Lower critical field measurements in YBa2Cu3O(6+x) single crystals

    NASA Technical Reports Server (NTRS)

    Kaiser, D. L.; Swartzendruber, L. J.; Gayle, F. W.; Bennett, L. H.

    1991-01-01

    The temperature dependence of the lower critical field in YBa2Cu3O(6+x) single crystals was determined by magnetization measurements with the applied field parallel and perpendicular to the c-axis. Results are compared with data from the literature and fitted to Ginzberg-Landau equations by assuming a linear dependence of the parameter kappa on temperature. A value of 7 plus or minus 2 kOe was estimated for the thermodynamic critical field at T = O by comparison of calculated H (sub c2) values with experimental data from the literature.

  7. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    DOEpatents

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  8. Broadening of resistive transition and irreversibility line for epitaxial YBa2Cu3O7-δ thin film

    NASA Astrophysics Data System (ADS)

    Xiao-jun, Xu; Ke-bin, Li; Jun, Fang; Zhi-he, Wang; Xiao-wen, Cao

    1996-04-01

    The broadening of resistive transition of c axis oriented epitaxial YBCO thin film has been measured for three configurations: (1) Hparc and H ⊥ I; (2) Hparab plane and H ⊥ I; (3) Hparab plane and HparI in magnetic field up to 8 Tesla(T), and for different angle θ of magnetic field relative to the ab plane with H = 4T. The results obtained indicate that the broadening of resistive transition is mainly determined by the angle θ, but is hardly related to the angle α made between magnetic field and tran sport current in ab plane. This means that the broadening of resistive transition is not determined by flux motion drived by apparent Lorentz force. An expression of angular dependence of irreversibility line has been given.

  9. Crossover between superconductivity and magnetism in SrRuO3 mesocrystal embedded YBa2Cu3O7-x heterostructures.

    PubMed

    Suresh, Vandrangi; Lin, Jheng-Cyuan; Liu, Heng-Jui; Zhang, Zaoli; Chiang, Ping-Chih; Hsun, Yu-Ching; Chen, Yi-Chun; Lin, Jiunn-Yuan; Chu, Ying-Hao

    2016-11-03

    The competition between superconductivity and ferromagnetism poses great challenges and has attracted renewed interest for applications in novel spintronic devices. In order to emphasize their interactions, we fabricated a heterostructure composed of superconducting YBa 2 Cu 3 O 7-δ (YBCO) film embedded with itinerant ferromagnetic SrRuO 3 (SRO) mesocrystals. Starting from a doping concentration of 10 vol% of SRO mesocrystal in a YBCO matrix, corresponding to the density of SRO nanocrystals ∼5 × 10 9 cm -2 , which exhibits the typical characteristic of a metal-superconductor transition, and then increasing the magnetic interactions as a function of SRO embedment, the electronic correlation and the interplay between superconductivity and magnetism throughout the temperature regime were investigated. A metal-insulator transition in the normal state of YBCO and a crossover between superconductivity and magnetism at low temperatures were found upon increasing the density of nano-size SRO crystallites in the YBCO matrix as a consequence of competing interactions between these two ordered phases.

  10. The effect of stoichiometry on Cu-Zn ordering kinetics in Cu2ZnSnS4 thin films

    NASA Astrophysics Data System (ADS)

    Rudisch, Katharina; Davydova, Alexandra; Platzer-Björkman, Charlotte; Scragg, Jonathan

    2018-04-01

    Cu-Zn disorder in Cu2ZnSnS4 (CZTS) may be responsible for the large open circuit voltage deficit in CZTS based solar cells. In this study, it was investigated how composition-dependent defect complexes influence the order-disorder transition. A combinatorial CZTS thin film sample was produced with a cation composition gradient across the sample area. The graded sample was exposed to various temperature treatments and the degree of order was analyzed with resonant Raman spectroscopy for various compositions ranging from E- and A-type to B-, F-, and C-type CZTS. We observe that the composition has no influence on the critical temperature of the order-disorder transition, but strongly affects the activation energy. Reduced activation energy is achieved with compositions with Cu/Sn > 2 or Cu/Sn < 1.8 suggesting an acceleration of the cation ordering in the presence of vacancies or interstitials. This is rationalized with reference to the effect of point defects on exchange mechanisms. The implications for reducing disorder in CZTS thin films are discussed in light of the new findings.

  11. Determination of interstitial oxygen atom position in U2N3+xOy by near edge structure study

    NASA Astrophysics Data System (ADS)

    Jiang, A. K.; Zhao, Y. W.; Long, Z.; Hu, Y.; Wang, X. F.; Yang, R. L.; Bao, H. L.; Zeng, R. G.; Liu, K. Z.

    2018-06-01

    The determination of interstitial oxygen atom site in U2N3+xOy film could facilitate the understanding of the oxidation mechanism of α-U2N3 and the effect of U2N3+xOy on anti-oxidation. By comparing the similarities and variances between N K edge and O K edge electron energy loss spectra (EELS) for oxidized α-U2N3 and UO2, the present work looks at the local structure of nitrogen and oxygen atoms in U2N3+xOy film, identifying the most possible position of interstitial O atom.

  12. Microstructures and properties of superconducting Y-ErBaCuO thin films obtained from disordered Y-ErBaF2Cu films

    NASA Technical Reports Server (NTRS)

    Cikmach, P.; Diociaiuti, M.; Fontana, A.; Giovannella, C.; Iannuzzi, M.; Lucchini, C.; Merlo, V.; Messi, R.; Paoluzi, L.; Scopa, L.

    1991-01-01

    The preparation procedure used to obtain superconducting thin films by radio frequency magnetron sputtering of a single mosaic target is described in detail. The single mosaic target is composed of (Y-Er), BaF2, and Cu.

  13. Characterization of Hybrid Ferroelectric/HTS Thin Films for Tunable Microwave Components

    NASA Technical Reports Server (NTRS)

    Winters, M. D.; Mueller, C. H.; Bhasin, K. B.; Miranda, F. A.

    1996-01-01

    Since the discovery of High-Temperature-Superconductors (HTS) in 1986, a diversity of HTS-based microwave components has been demonstrated. Because of their low conductor losses, HTS-based components are very attractive for integration into microwave circuits for space communication systems. Recent advancements have made deposition of ferroelectric thin films onto HTS thin films possible. Due to the sensitivity of the ferroelectric's dielectric constant (epsilon(sub r)) to an externally applied electric field (E), ferroelectric/superconducting structures could be used in the fabrication of low loss, tunable microwave components. In this paper, we report on our study of Ba(0.5)Sr(0.5)TiO3/YBa2Cu3O(7-delta) and Ba(0.08)Sr(0.92)TiO3/YBa2Cu3O(7-delta) ferroelectric/superconducting thin films on lanthanum aluminate (LaAlO3) substrates. For the (Ba:Sr, 0.50:0.50) epitaxial sample, a epsilon(sub r) of 425 and a loss tangent (tan delta) of 0.040 were measured at 298 K, 1.0 MHz, and zero applied E. For the same sample, a epsilon(sub r) of 360 and tan delta of 0.036 were obtained at 77 K, 1.0 MHz, and zero applied E. Variations in epsilon(sub r) from 180 to 360 were observed over an applied E range of 0V/cm less than or equal to E less than or equal to 5.62 x 10(exp 4) V/cm with little change in tan delta. However, the range of epsilon(sub r) variation for the polycrystalline (Ba:Sr, 0.08:0.92) sample over 0V/cm less than or equal to E less than or equal to 4.00 x 10(exp 4) V/cm was only 3.6 percent while tan delta increased markedly. These results indicate that a lack of epitaxy between the ferroelectric and superconducting layers decreases tuning and increases microwave losses.

  14. Processing approach towards the formation of thin-film Cu(In,Ga)Se2

    DOEpatents

    Beck, Markus E.; Noufi, Rommel

    2003-01-01

    A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420.degree. C.-550.degree. C. in a vacuum or under an inert atmosphere to produce a single-phase, group IB-III-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S).sub.2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.

  15. Optimization of low cost, non toxic, earth abundant p-type Cu2SnS3 thin film for Photovoltaic application

    NASA Astrophysics Data System (ADS)

    Chaudhari, J. J.; Patel, S.; Joshi, U. S.

    2016-09-01

    Cu2SnS3 (CTS) is one of promising candidate as an absorber material for thin film solar cell. Because of relatively higher prize of Indium and hazardous environmental impact of processing of Gallium, CTS is suitable alternative candidate to Cu2SnS3 (CIGS) based solar cell as its constituent elements such as copper, tin and sulphur are abundantly available in earth's crust. CTS is ternary semiconductor and its energy band gap is 1.5eV, which is perfectly matched with solar energy spectrum for maximum transfer of solar energy into electrical energy through photovoltaic action. The primary methods for the synthesis of CTS are Thermal evaporation, electrochemical, sputtering and wet chemical methods. Here in this paper we have optimized a low cost non-vacuum solution process method for the synthesis of CTS without any external sulfurization. The X-ray diffraction studies showed the formation of phase with the peaks corresponding to (112), (220) and (312) planes. Chemical Solution Deposition (CSD) for the synthesis of CTS is suitable for large area deposition and it includes several routes like solvothermal methods, direct liquid coating and nano ink based technique. The metal Chloride salts and thiourea is used as a source of sulphur to synthesize CTS solution and homogeneous thin films of CTS deposited on glass substrate using spin coating method. Use of abrasive solvent like hydrazine and hydrogen sulphide gas which are used to synthesize CTS thin film have detrimental effect on environment, we report eco friendly solvent based approach to synthesize CTS at low temperature 200 °C.

  16. Preparation of CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films on Si substrates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yamamoto, Yukio; Yamaguchi, Toshiyuki; Suzuki, Masayoshi

    For fabricating efficient tandem solar cells, CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films have been prepared on Si(100), Si(110) and Si(111) substrates in the temperature range (R.T.{approximately}400 C) by rf sputtering. From EPMA analysis, these sputtered thin films are found to be nearly stoichiometric over the whole substrate temperature range, irrespective of the azimuth plane of the Si substrate. XPS studies showed that the compositional depth profile in these thin films is uniform. X-ray diffraction analysis indicated that all the thin films had a chalcopyrite structure. CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} thin films were strongly oriented along the (112) plane with increasingmore » the substrate temperature, independent of the azimuth plane of the Si substrate, suggesting the larger grain growth.« less

  17. Investigation of Pb doping on electrical, structural and superconducting properties of YBa2-xPbxCu3O7-δ superconductors

    NASA Astrophysics Data System (ADS)

    Ezzatpour, S.; Sharifzadegan, L.; Sarvari, F.; Sedghi, H.

    2018-06-01

    In this study the high temperature superconductor YBa2-xPbxCu3O7-δ with doping x = ,0.05,0.1,0.15 were prepared by the standard solid-state reaction method. The effect of Pb substitution on Ba site of YBCO superconducting system, structural, electrical and superconducting properties of Y-based superconductor has been investigated. The measurements of dc resisitivity were performed on all samples with four-probe method using low frequency/lowAC current (4 mA) . The superconducting temperature, Tc, were determined from the resistivity versus temperature (R-T) curves. Results show that Pb doping reduced the cirtical temperature(Tc) and superconductivity properties of our samples. The maximum and the minimum Tc were observed for the samples with x = 0.15 and x = 0.1 respectively. The structure and phase purity of samples were examined by the X-ray powder diffraction technique (XRD) performed by means of D8 Advance Bruker diffractometer with Cu kα radiation. The grain morphology of surface of the samples was analyzed by sacanning electron microscopy (SEM). XRD patterns of polycrystalline materials of composition YBa2-xPbxCu3O7-δ revealed that all prepared samples are orthorhombic. All of the peaks of YBCO and YBa2-xPbxCu3O7-δ have been used for the estimation of volume fractions of the phases and ignored the void peaks.

  18. Synthesis and microstructural TEM investigation of CaCu{sub 3}Ru{sub 4}O{sub 12} ceramic and thin film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brize, Virginie; STMicroelectronics, 16 rue P and M Curie, 37001 Tours; Autret-Lambert, Cecile, E-mail: cecile.autret-lambert@univ-tours.fr

    2011-10-15

    CaCu{sub 3}Ru{sub 4}O{sub 12} (CCRO) is a conductive oxide having the same structure as CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO{sub 4} substrate. Structural and physical properties of bulkmore » CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation. - Graphical Abstract: Structure of CaCu{sub 3}Ru{sub 4}O{sub 12} showing the RuO{sub 6} octahedra and the square planar environment for Cu{sup 2+}. Highlights: > In this study, we investigate the structural properties and microstructure of ceramics CaCu{sub 3}Ru{sub 4}O{sub 12}. > We study the conduction properties of polycrystalline material. > Then we synthesize the conductive thin film which is deposited on a high K material with the same structure (CaCu{sub 3}Ti{sub 4}O{sub 12}).« less

  19. Solution-Processed Cu2ZnSn(S,Se) 4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source.

    PubMed

    Guo, Jing; Pei, Yingli; Zhou, Zhengji; Zhou, Wenhui; Kou, Dongxing; Wu, Sixin

    2015-12-01

    Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.

  20. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  1. Inflight resistance measurement on high-T(sub c) superconducting thin films exposed to orbital atomic oxygen on CONCAP-2 (STS-46)

    NASA Technical Reports Server (NTRS)

    Gregory, J. C.; Raiker, G. N.; Bijvoet, J. A.; Nerren, P. D.; Sutherland, W. T.; Mogro-Camperso, A.; Turner, L. G.; Kwok, Hoi; Raistrick, I. D.; Cross, J. B.

    1995-01-01

    In 1992, UAH (University of Alabama in Huntsville) conducted a unique experiment on STS-46 in which YBa2Cu3O7 (commonly known as '1-2-3' superconductor) high-T(c) superconducting thin film samples prepared at three different laboratories were exposed to 5 eV atomic oxygen in low Earth orbit on the ambient and 320 C hot plate during the first flight of the CONCAP-2 (Complex Autonomous Payload) experiment carrier. The resistance of the thin films was measured in flight during the atomic oxygen exposure and heating cycle. Superconducting properties were measured in the laboratory before and after the flight by the individual experimenters. Films with good superconducting properties, and which were exposed to the oxygen flux, survived the flight including those heated to 320 C (600 K) with properties essentially unchanged, while other samples which were heated but not exposed to oxygen were degraded. The properties of other flight controls held at ambient temperature appear unchanged and indistinguishable from those of ground controls, whether exposed to oxygen or not.

  2. Quantifying point defects in Cu 2 ZnSn(S,Se) 4 thin films using resonant x-ray diffraction

    DOE PAGES

    Stone, Kevin H.; Christensen, Steven T.; Harvey, Steven P.; ...

    2016-10-17

    Cu 2ZnSn(S,Se)4 is an interesting, earth abundant photovoltaic material, but has suffered from low open circuit voltage. To better understand the film structure, we have measured resonant x-ray diffraction across the Cu and Zn K-edges for the device quality thin films of Cu 2ZnSnS4 (8.6% efficiency) and Cu 2ZnSn(S,Se)4 (3.5% efficiency). This approach allows for the confirmation of the underlying kesterite structure and quantification of the concentration of point defects and vacancies on the Cu, Zn, and Sn sublattices. Rietveld refinement of powder diffraction data collected at multiple energies is used to determine that there exists a high level ofmore » Cu Zn and Zn Cu defects on the 2c and 2d Wyckoff positions. We observe a significantly lower concentration of Zn Sn defects and Cu or Zn vacancies.« less

  3. Thin HTSC films produced by a polymer metal precursor technique

    NASA Astrophysics Data System (ADS)

    Lampe, L. v.; Zygalsky, F.; Hinrichsen, G.

    In precursors the metal ions are combined with acid groups of polymethacrylic acid (PMAA), polyacrylic acid (PAA) or novolac. Compared to thermal degradation temperature of pure polymers those of precursors are low. Precursors films were patterned by UV lithography. Diffractometric investigations showed that the c-axis oriented epitaxial films of YBa 2Cu 3O x and Bi 2Sr 2CaCu 2O x originated from amorphous metal oxide films, which were received after thermal degradation of the precursor. Transition temperatures and current densities were determined by electric resistivity measurements.

  4. Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

    NASA Astrophysics Data System (ADS)

    Chaudhari, J. J.; Joshi, U. S.

    2018-05-01

    In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

  5. Aqueous Solution-Phase Selenized CuIn(S,Se)2 Thin Film Solar Cells Annealed under Inert Atmosphere.

    PubMed

    Oh, Yunjung; Yang, Wooseok; Kim, Jimin; Woo, Kyoohee; Moon, Jooho

    2015-10-14

    A nonvacuum solution-based approach can potentially be used to realize low cost, roll-to-roll fabrication of chalcopyrite CuIn(S,Se)2 (CISSe) thin film solar cells. However, most solution-based fabrication methods involve highly toxic solvents and inevitably require sulfurization and/or postselenization with hazardous H2S/H2Se gases. Herein, we introduce novel aqueous-based Cu-In-S and Se inks that contain an amine additive for producing a high-quality absorber layer. CISSe films were fabricated by simple deposition of Cu-In-S ink and Se ink followed by annealing under an inert atmosphere. Compositional and phase analyses confirmed that our simple aqueous ink-based method facilitated in-site selenization of the CIS layer. In addition, we investigated the molecular structures of our aqueous inks to determine how crystalline chalcopyrite absorber layers developed without sulfurization and/or postselenization. CISSe thin film solar cells annealed at 550 °C exhibited an efficiency of 4.55% under AM 1.5 illumination. The low-cost, nonvacuum method to deposit chalcopyrite absorber layers described here allows for safe and simple processing of thin film solar cells.

  6. Surface chirality of CuO thin films.

    PubMed

    Widmer, Roland; Haug, Franz-Josef; Ruffieux, Pascal; Gröning, Oliver; Bielmann, Michael; Gröning, Pierangelo; Fasel, Roman

    2006-11-01

    We present X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD) investigations of CuO thin films electrochemically deposited on an Au(001) single-crystal surface from a solution containing chiral tartaric acid (TA). The presence of enantiopure TA in the deposition process results in a homochiral CuO surface, as revealed by XPD. On the other hand, XPD patterns of films deposited with racemic tartaric acid or the "achiral" meso-tartaric acid are completely symmetric. A detailed analysis of the experimental data using single scattering cluster calculations reveals that the films grown with l(+)-TA exhibit a CuO(1) orientation, whereas growth in the presence of d(-)-TA results in a CuO(11) surface orientation. A simple bulk-truncated model structure with two terminating oxygen layers reproduces the experimental XPD data. Deposition with alternating enantiomers of tartaric acid leads to CuO films of alternating chirality. Enantiospecifity of the chiral CuO surfaces is demonstrated by further deposition of CuO from a solution containing racemic tartaric acid. The pre-deposited homochiral films exhibit selectivity toward the same enantiomeric deposition pathway.

  7. Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

    NASA Astrophysics Data System (ADS)

    Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko

    2018-03-01

    Investigation of the electrical resistivity of Cu-doped PbS thin films has been carried out. The films were prepared using a DC sputtering technique. The doping was achieved by introducing the Cu dopant plate material directly on the surface of the PbS sputtering target plate. SEM-EDX data shows the Cu concentration in the PbS film to be proportional to the Cu plate diameter. The XRD pattern indicates the film is in crystalline cubic form. The Hall effect measurement shows that Cu doping yields an increase in the carrier concentration to 3.55 × 1019 cm-3 and a significant decrease in electrical resistivity. The lowest resistivity obtained was 0.13 Ωcm for a Cu concentration of 18.5%. Preferential orientation of (1 1 1) and (2 0 0) occurs during deposition.

  8. Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

    NASA Astrophysics Data System (ADS)

    Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

    2018-05-01

    Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

  9. Study on the photo-induced oxygen reordering in YBa2Cu3O6+x

    NASA Astrophysics Data System (ADS)

    Milić, M. M.; Lazarov, N. Dj.; Cucić, D. A.

    2012-05-01

    Effect of the long term illumination of the YBa2Cu3O6+x with visible light or ultraviolet irradiation on its superconducting properties was studied in the frame of a simple theoretical model, which assumes that photodoping triggers rearrangement of oxygen monomers in the chain layers thus causing the enhancement of the average chain length, lav. Since, according to the model of charge transfer mechanism, long CuO chains are better electronic hole donors than the short ones, increase of the average chain length induces additional holes transfer from chain layers to the superconducting CuO2 planes which in turn leads to the increase of the superconducting transition temperature Tc. By the use of the expression for the chain length probability distribution and numerically calculated values for the average chain length in the non-excited system, we were able to estimate the doping p (number of holes per one Cu atom in the superconducting CuO2 planes) and Tc enhancement due to photo-induced oxygen reordering. The theoretical results are compared with available experimental data.

  10. Pinning-to-barrier crossover in YBa2Cu3O7-δ single crystals

    NASA Astrophysics Data System (ADS)

    Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Konczykowski, M.; Holtzberg, F.; Benoit, W.

    1996-03-01

    The behaviour of magnetic flux in high purity untwinned YBa2Cu3O7-δ (YBCO) single crystals is visualised by means of the magneto-optical technique. It is observed that after zero field-cooling at high temperatures near T c , flux penetrates directly to the sample center over a flux free edge area, in contrast to the usual Bean-like flux penetration from the edges. This fact clearly shows that volume pinning becomes negligible compared with the edge barrier. The role of the recently rediscovered geometrical barrier in the crystal magnetisation is discussed.

  11. Bulk modulus and its pressure derivative of YBa2Cu3O7-x

    NASA Astrophysics Data System (ADS)

    Cankurtaran, M.; Saunders, G. A.; Willis, J. R.; Al-Kheffaji, A.; Almond, D. P.

    1989-02-01

    Pressure dependences of the ultrasonic wave velocities in polycrystalline YBa2Cu3O7-x are reported. Porosity effects are taken into account using wave-scattering theory in a porous medium. The bulk modulus B0 at atmospheric pressure for the nonporous matrix is 65 GPa, much smaller than B(P) obtained at high pressures from lattice-parameter measurements. This discrepancy accrues from the large value of (∂B/∂P). The comparatively small B0 and large (∂B/∂P) are due to vacant anion sites in this defect perovskite.

  12. PLD of metal insulator and relaxor electroceramic thin films

    NASA Astrophysics Data System (ADS)

    Bowman, Robert M.; Catalan, Gustau; Corbett, Michael H.; O'Neill, Dierdre; Gregg, J. M.

    2001-04-01

    In this paper we describe the use of pulsed laser deposition (PLD) for the growth of thin film VxOy, NdNiO3 and Pb(Mg1/3Nb2/3)O3. We begin by briefly describing our growth system. By showing case studies of the three materials systems we identify some important aspects and conditions that we believe are of crucial importance to oxide film growth in general.

  13. Dependence of transition temperature on hole concentration per CuO2 sheet in the Bi-based superconductors

    NASA Technical Reports Server (NTRS)

    Zhao, J.; Seehra, M. S.

    1991-01-01

    The recently observed variations of the transition temperature (T sub c) with oxygen content in the Bi based (2212) and (2223) superconductors are analyzed in terms of p+, the hole concentration per CuO2 sheet. This analysis shows that in this system, T sub c increases with p+ initially, reaching maxima at p+ = 0.2 approx. 0.3, followed by monotonic decrease of T sub c with p+. The forms of these variations are similar to those observed in the La(2-x)Sr(x)CuO4 and YBa2Cu3Oy systems, suggesting that p+ may be an important variable governing superconductivity in the cuprate superconductors.

  14. Effect of substrate on texture and mechanical properties of Mg-Cu-Zn thin films

    NASA Astrophysics Data System (ADS)

    Eshaghi, F.; Zolanvari, A.

    2018-04-01

    In this work, thin films of Mg-Cu-Zn with 60 nm thicknesses have been deposited on the Si(100), Al, stainless steel, and Cu substrates using DC magnetron sputtering. FESEM images displayed uniformity of Mg-Cu-Zn particles on the different substrates. AFM micrograph revealed the roughness of thin film changes due to the different kinds of the substrates. XRD measurements showed the existence of strong Mg (002) reflections and weak Mg (101) peaks. Residual stress and adhesion force have been measured as the mechanical properties of the Mg-Cu-Zn thin films. The residual stresses of thin films which have been investigated by X-ray diffraction method revealed that the thin films sputtered on the Si and Cu substrates endure minimum and maximum stresses, respectively, during the deposition process. However, the force spectroscopy analysis indicated that the films grew on the Si and Cu experienced maximum and minimum adhesion force. The texture analysis has been done using XRD instrument to make pole figures of Mg (002) and Mg (101) reflections. ODFs have been calculated to evaluate the distribution of the orientations within the thin films. It was found that the texture and stress have an inverse relation, while the texture and the adhesion force of the Mg-Cu-Zn thin films have direct relation. A thin film that sustains the lowest residual stresses and highest adhesive force had the strongest {001} basal fiber texture.

  15. The Influence of channel length to the characteristics of CuPc based OFET thin films

    NASA Astrophysics Data System (ADS)

    Sujarwata; Handayani, L.; Mosik; Fianti

    2018-03-01

    The main focus of this research is to characterize organic field effect transistor (OFET) thin films based on CuPc with a bottom-contact structure and varied channel length. OFET was prepared by Si substrate cleaning in the ultrasonic cleaner first, then deposition of the source and drain electrodes on the substrate with vacuum evaporation at room temperature, and finally CuPc thin film deposition among the source, drain, and gate electrodes. The distance between source anddrain electrodes is the channel length of the CuPc thin film. In this research, the channel length was varied; 100 μm, 200 μm and 300 μm, with the same active areas of 2.9-3.42 V and different current, IDS. The result showed that the shorter channel length causes, the bigger IDS flowing on the OFET

  16. Evidence for three-dimensional XY critical properties in underdoped YBa2Cu3O7-δ

    NASA Astrophysics Data System (ADS)

    Schneider, T.

    2007-05-01

    We perform a detailed analysis of the reversible magnetization data of Salem-Sugui and Babíc of underdoped and optimally doped YBa2Cu3O7-δ single crystals. Near the zero field transition temperature we observe extended consistency with the properties of the three-dimensional XY universality class, even though the attained critical regime is limited by an inhomogeneity induced finite size effect. Nevertheless, as Tc falls from 93.5to41.5K , the critical amplitude of the in-plane correlation length ξab0 , the anisotropy γ=ξab0/ξc0 and the critical amplitude of the in-plane penetration depth λab0 increase substantially, while the critical amplitude of the c -axis correlation length ξc0 does not change much. As a consequence, the correlation volume Vcorr- increases and the critical amplitude of the specific heat singularity A- decreases dramatically, while the rise of λab0 reflects the behavior of the zero temperature counterpart. Conversely, although ξab0 and λab0 increase with reduced Tc , the ratio λab0/ξab0- , corresponding to the Ginzburg-Landau parameter κab , decreases substantially and YBa2Cu3O7-δ crosses over from an extreme to a weak type-II superconductor.

  17. Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

    PubMed

    Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

    2017-08-02

    The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

  18. High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Chen, Rongzhen; Persson, Clas

    2017-06-01

    We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

  19. Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

    NASA Technical Reports Server (NTRS)

    VanKeuls, Frederick W.

    1999-01-01

    Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

  20. Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

    NASA Astrophysics Data System (ADS)

    Yoo, Myoung Han; Ko, Pil Ju; Kim, Nam-Hoon; Lee, Hyun-Yong

    2017-12-01

    Preparation of Cu(In,Ga)Se2 (CIGS) thin films has continued to face problems related to the selenization of sputtered Cu-In-Ga precursors when using H2Se vapor in that the materials are highly toxic and the facilities extremely costly. Another obstacle facing the production of CIGS thin films has been the required annealing temperature, as it relates to the decomposition temperature of a typical flexible polymer substrate. A novel laser-annealing process for CIGS thin films, which does not involve the selenization process and which can be performed at a lower temperature, has been proposed. Following sputtering with a Cu0.9In0.7Ga0.3Se2 target, the laser-annealing of the CIGS thin film was performed using a continuous 532-nm Nd:YAG laser with an annealing time of 200 - 1000 s at a laser optical power of 2.75 W. CIGS chalcopyrite (112), (220/204), and (312/116) phases, with some weak diffraction peaks corresponding to the Cu-Se- or the In-Se-related phases, were successfully obtained for all the CIGS thin films that had been laser-annealed at 2.75 W. The lattice parameters, the d-spacing, the tetragonal distortion parameter, and the strain led to the crystallinity being worse and grain size being smaller at 600 s while better crystallinity was obtained at 200 and 800 s, which was closely related to the deviations from molecularity and stoichiometry, which were greatest at 600 s while the values exhibited near-stoichiometric compositions at 200 and 800 s. The band gaps of the laser-annealed CIGS thin films were within a range of 1.765 - 1.977 eV and depended on the internal stress. The mean absorbance of the laser-annealed CIGS thin films was within a range of 1.598 - 1.900, suggesting that approximately 97.47 - 98.74% of the incident photons in the visible spectral region were absorbed by this 400-nm film. The conductivity types exhibited the same deviations (Δ m > 0 and Δ s < 0) in all the laser-annealed CIGS thin films. After laser-annealing, the resistivity

  1. Fabrication and chemical composition of RF magnetron sputtered Tl-Ca-Ba-Cu-O high Tc superconducting thin films

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; Radpour, F.; Kapoor, V. J.; Lemon, G. H.

    1990-01-01

    The preparation of TlCaBaCuO superconducting thin films on (100) SrTiO3 substrates is described, and the results of their characterization are presented. Sintering and annealing the thin films in a Tl-rich ambient yielded superconductivity with a Tc of 107 K. The results of an XPS study support two possible mechanisms for the creation of holes in the TlCaBaCuO compound: (1) partial substitution of Ca(2+) for Tl(3+), resulting in hole creation, and (2) charge transfer from Tl(3+) to the CuO layers, resulting in a Tl valence between +3 and +1.

  2. Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

    NASA Astrophysics Data System (ADS)

    Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

    2003-11-01

    The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low

  3. Macroscopic shape change of melt-processed YBa{sub 2}Cu{sub 3}O{sub x-}Y{sub 2}BaCuO{sub 5} bulk superconductors.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Diko, P.; Goretta, K. C.; Energy Technology

    A macroscopic change in the shape of five-domain melt-processed YBa{sub 2}Cu{sub 3}O{sub x}/Y{sub 2}BaCuO{sub 5} bulk superconductors is reported and explained. The change, a distortion from circular cross-section, is attributed to liquid transport from a slower growth front in an a-axis direction to a faster growth front in a c-axis direction at the edge between the a- and c-growth fronts, a phenomenon that we call the edge melt distribution (EMD) effect. Formation of bands of higher Y{sub 2}BaCuO{sub 5} particle density along the a/c growth boundaries, which nearly coincide with {l_brace}110{r_brace}-type planes, is explained by the EMD effect.

  4. Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

    2010-10-01

    Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

  5. Fermi surface ridge at second and third UMKLAPP positron annihilations in YBa 2Cu 3O 7- δ

    NASA Astrophysics Data System (ADS)

    Adam, Gh.; Adam, S.; Barbiellini, B.; Hoffmann, L.; Manuel, A. A.; Peter, M.; Massida, S.

    1993-12-01

    Results of statistical noise smoothing of the electron momentum distribution got by two-dimensional angular correlation of the electron-positron annihilation radiation technique on untwinned YBa 2Cu 3O 7- δ single crystals are reported. Two distinct signatures of the sheet of Fermi surface related to the CuO chains (the ridge) are resolved. The first occurs at second Umklapp processes, in agreement with previous evidence. The second one, identified for the first time, occurs at third Umklapp processes. Comparison with FLAPW calculations confirms this result.

  6. Stress and plasticity in Cu thin films

    NASA Astrophysics Data System (ADS)

    Weihnacht, Volker; Brückner, Winfried

    1999-11-01

    Aim of the work was to get more detailed knowledge about the processes of plasticity in thin Cu films. For this purpose, stress measurements and microstructural investigations have been done on 535nm thick Cu films on oxidized Si substrates. The film stress was measured by wafer-curvature technique using a home-made laser-optical apparatus. This apparatus allowed four-point bending experiments additionally to thermal cycling. It turned out that applied bending strains even higher than 0.5% did not leave significant plastic strains after relief of bending stress. It is concluded, that the elastic interaction of parallel dislocations at the film-substrate interface may play an important role in strain hardening even after small plastic strains.

  7. Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films

    NASA Astrophysics Data System (ADS)

    Zhang, Y. J.; Liu, Z. T.; Zang, D. Y.; Che, X. S.; Feng, L. P.; Bai, X. X.

    2013-12-01

    We have successfully prepared Cu-Al-O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu-Al-O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO2. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO2 phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO2 phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical-electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3-3.8 eV depending on the annealing temperature.

  8. Surface modifications of chalcopyrite CuInS2 thin films for photochatodes in photoelectrochemical water splitting under sunlight irradiation

    NASA Astrophysics Data System (ADS)

    Gunawan; Haris, A.; Widiyandari, H.; Septina, W.; Ikeda, S.

    2017-02-01

    Copper chalcopyrite semiconductors include a wide range of compounds that are of interest for photoelectrochemical water splitting which enables them to be used as photochatodes for H2 generation. Among them, CuInS2 is one of the most important materials due to its optimum band gap energy for sunlight absorption. In the present study, we investigated the application of CuInS2 fabricated by electrodeposition as photochatodes for water splitting. Thin film of CuInS2 chalcopyrite was formed on Mo-coated glass substrate by stacked electrodeposition of copper and indium followed by sulfurization under H2S flow. The films worked as a H2 liberation electrode under cathodic polarization from a solution containing Na2SO4 after loading Pt deposits on the film. Introduction of an n-type CdS layer by chemical bath deposition on the CuInS2 surface before the Pt loading resulted appreciable improvements of H2 liberation efficiency and a higher photocurrent onset potential. Moreover, the use of In2S3 layer as an alternative n-type layer to the CdS significantly improved the H2 liberation performance: the CuInS2 film modified with In2S3 and Pt deposits worked as an efficient photocathode for photoelectrochemical water splitting.

  9. Optimization of the deposition conditions and structural characterization of Y1Ba2Cu3O(7-x) thin superconducting films

    NASA Technical Reports Server (NTRS)

    Chrzanowski, J.; Meng-Burany, S.; Xing, W. B.; Curzon, A. E.; Heinrich, B.; Irwin, J. C.; Cragg, R. A.; Zhou, H.; Habib, F.; Angus, V.

    1995-01-01

    Two series of Y1Ba2Cu3O(z) thin films deposited on (001) LaAl03 single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O2) and substrate temperature of the deposition process Th, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j(sub c) and T(sub c) exhibited T(sub c) greater than or equal to 91 K and j(sub c) greater than or equal to 4 x 106 A/sq cm, at 77 K. Close correlations between the structural quality of the film, the growth parameters (p(O2), T(sub h)) and j(sub c) and T(sub c) have been found.

  10. Thermally stimulated nonlinear refraction in gelatin stabilized Cu-PVP nanocomposite thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tamgadge, Y. S., E-mail: ystamgadge@gmail.com; Atkare, D. V.; Pahurkar, V. G.

    2016-05-06

    This article illustrates investigations on thermally stimulated third order nonlinear refraction of Cu-PVP nanocomposite thin films. Cu nanoparticles have been synthesized using chemical reduction method and thin films in PVP matrix have been obtained using spin coating technique. Thin films have been characterized by X-ray diffraction (XRD) and Ultraviolet-visible (UV-vis) spectroscopyfor structural and linear optical studies. Third order nonlinear refraction studies have been performed using closed aperture z-scan technique under continuous wave (CW) He-Ne laser. Cu-PVP nanocomposites are found to exhibit strong nonlinear refractive index stimulated by thermal lensing effect.

  11. Characteristics of YBa2Cu3O7 high-Tc superconductor with KCl

    NASA Astrophysics Data System (ADS)

    Yoon, Ki Hyun; Chang, Sung Sik

    1990-03-01

    The lattice parameters, microstructural change, transition temperature, and electrical properties of the YBa2-xKxCu3O7 high-Tc superconductor in the range from x=0 to x=0.25 have been investigated. The high-Tc orthorhombic phase increases with increasing KCl up to x=0.20, above which it decreases. The lattice parameters decrease with increasing KCl up to x=0.10, and then become nearly uniform. The grain size increases with increasing KCl up to x=0.20 due to its role as sintering agent. The specimens with x=0.2 have transition temperatures of 96 K and high magnetic susceptibility due to the contraction of lattice parameters a and b and the increase of orthorhombic distortion.

  12. Electronic state and superconductivity of YBa2Cu3-xO7-y (M=Al,Zn and Sn) systems

    NASA Technical Reports Server (NTRS)

    Zhao, Y.; Zhang, Q. R.; Zhang, H.

    1990-01-01

    A series of YBa2Cu(3-x)MxO(7-y) (M=Al,Zn and Sn) single phase samples were prepared, and the measurements of the crystal structure, oxygen content, electric resistivity, thermoelectric power, Mossbauer spectrum, XPS and superconductivity were performed. The experimental results of X ray powder diffraction, Mossbauer spectrum and oxygen content show that the Zn(2+) and the Al(3+) occupy the Cu(2) site in Cu-O planes and the Cu(1) site in Cu-O chains respectively, but the Sn(4+) occupies both the Cu(1) sites. As regards the properties in superconducting state, both the Zn(2+) and the Al(3+) depress T(sub c) strongly, but the Sn(4+) does not. As for the electronic transport properties in normal state, the system doped by Al(3+) displays a rapid increase of resistivity and some electron localization-like effects, and the thermoelectric power enhances obviously; the series contained Zn(2+) almost shows no changes of electric resistivity but the sign of the thermoelectric power is reversed. Other results are given and briefly discussed.

  13. Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

    PubMed

    Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

    2015-10-14

    Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

  14. A two-dimensional ACAR study of untwinned YBa2Cu3O(7-x)

    NASA Astrophysics Data System (ADS)

    Smedskjaer, L. C.; Bansil, A.

    1991-12-01

    We have carried out 2D-ACAR measurements on an untwinned single crystal of YBa2Cu3O(sub 7-x) as a function of temperature, for five temperatures ranging from 30K to 300K. We show that these temperature-dependent 2D-ACAR spectra can be described to a good approximation as a superposition of two temperature independent spectra with temperature-dependent weighting factors. We show further how the data can be used to correct for the 'background' in the experimental spectrum. Such a 'background corrected' spectrum is in remarkable accord with the corresponding band theory predictions, and displays, in particular, clear signatures of the electron ridge Fermi surface.

  15. Superconducting transition temperature in the Y(1-x)M(x)Ba2Cu3O(y) system

    NASA Astrophysics Data System (ADS)

    Suzuki, Takeyuki; Yamazaki, Tsutomu; Sekine, Ryuuta; Koukitsu, Akinori; Seki, Hisashi

    1989-04-01

    Experimental results are presented for the inclusion of compositional additives, M, to the sintered high-temperature superconductor Y(1-x)M(x)Ba2Cu3O(y); M can be the oxides of Mg, Ce, Gd, Yb, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, Sb, Bi, and Te, as well as Li, Na, K, Ca, Sr, and La carbonates. Temperature dependence of the electrical resistance was measured down to about 80 K. Attention is given to the influence of ionic radius and the valence of the M species.

  16. Shear at Twin Domain Boundaries in YBa2Cu3O7-x

    NASA Astrophysics Data System (ADS)

    Caldwell, W. A.; Tamura, N.; Celestre, R. S.; MacDowell, A. A.; Padmore, H. A.; Geballe, T. H.; Koster, G.; Batterman, B. W.; Patel, J. R.

    2004-05-01

    The microstructure and strain state of twin domains in YBa2Cu3O7-x are discussed based upon synchrotron white-beam x-ray microdiffraction measurements. Intensity variations of the fourfold twin splitting of Laue diffraction peaks are used to determine the twin domain structure. Strain analysis shows that interfaces between neighboring twin domains are strained in shear, whereas the interior of these domains are regions of low strain. These measurements are consistent with the orientation relationships of twin boundaries within and across domains and show that basal plane shear stresses can exceed 100MPa where twin domains meet. Our results support stress field pinning of magnetic flux vortices by twin domain boundaries.

  17. Optimisation of growth of epitaxial Tl 2Ba 2Ca 1Cu 2O 8 superconducting thin films for electronic device applications

    NASA Astrophysics Data System (ADS)

    Michael, Peter C.; Johansson, L.-G.; Bengtsson, L.; Claeson, T.; Ivanov, Z. G.; Olsson, E.; Berastegui, P.; Stepantsov, E.

    1994-12-01

    Epitaxial thin films of Tl 2Ba 2Ca 1Cu 2O 8 (Tl-2212) superconductor have been grown on single crystal (100) lanthanum aluminate (LaAlO 3) substrates by a two stage process: laser ablation of a BaCaCuO (0212) sintered target and post-deposition anneal ex-situ in a thallium environment. The films are c-axis oriented with in-plane epitaxy as determined by x-ray diffraction (XRD θ-2θ and φ-scans). Superconducting transition temperatures as high as 105.5K have been obtained both from four-probe resistance and a.c. magnetic susceptibility measurements. Film morphology and chemical composition have been assessed by scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDX). Sensitivity of the precursor film to environmental exposure has proven to be a determining factor in the reproducibility of film growth characteristics. The effect of oxygen partial pressure and substrate temperature used in the precursor film synthesis, as well as the thallium annealing temperature and duration, on the growth of Tl-2212 thin films is reported.

  18. Bi2O3 nanoparticles encapsulated in surface mounted metal-organic framework thin films

    NASA Astrophysics Data System (ADS)

    Guo, Wei; Chen, Zhi; Yang, Chengwu; Neumann, Tobias; Kübel, Christian; Wenzel, Wolfgang; Welle, Alexander; Pfleging, Wilhelm; Shekhah, Osama; Wöll, Christof; Redel, Engelbert

    2016-03-01

    We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye.We describe a novel procedure to fabricate a recyclable hybrid-photocatalyst based on Bi2O3@HKUST-1 MOF porous thin films. Bi2O3 nanoparticles (NPs) were synthesized within HKUST-1 (or Cu3(BTC)2) surface-mounted metal-organic frame-works (SURMOFs) and characterized using X-ray diffraction (XRD), a quartz crystal microbalance (QCM) and transmission electron microscopy (TEM). The Bi2O3 semiconductor NPs (diameter 1-3 nm)/SURMOF heterostructures exhibit superior photo-efficiencies compared to NPs synthesized using conventional routes, as demonstrated via the photodegradation of the nuclear fast red (NFR) dye. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00532b

  19. Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition.

    PubMed

    Jiang, Xishun; Zhang, Miao; Shi, Shiwei; He, Gang; Song, Xueping; Sun, Zhaoqi

    2014-01-01

    Cuprous oxide (Cu2O) thin films were prepared by using electrodeposition technique at different applied potentials (-0.1, -0.3, -0.5, -0.7, and -0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV-vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.

  20. Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

    NASA Technical Reports Server (NTRS)

    Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

    2005-01-01

    The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

  1. Electrodeposition of near stoichiometric CuInSe2 thin films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Chandran, Ramkumar; Mallik, Archana

    2018-03-01

    This work investigates on the single step electrodeposition of quality CuInSe2 (CIS) thin film absorber layer for photovoltaics applications. The electrodeposition was carried using an aqueous acidic solution with a pH of 2.25. The deposition was carried using a three electrode system in potentiostatic conditions for 50 minutes. The as-deposited and nitrogen (N2) annealed films were characterized using XRD, FE-SEM and Raman spectroscopy. It has been observed that the SDS has the tendency to suppress the copper selenide (CuxSe) secondary phase which is detrimental to the device performance.

  2. Effect of Heat and Laser Treatment on Cu2S Thin Film Sprayed on Polyimide Substrate

    NASA Astrophysics Data System (ADS)

    Magdy, Wafaa; Mahmoud, Fawzy A.; Nassar, Amira H.

    2018-02-01

    Three samples of copper sulfide Cu2S thin film were deposited on polyimide substrate by spray pyrolysis using deposition temperature of 400°C and deposition time of about 45 min. One of the samples was left as deposited, another was heat treated, while the third was laser treated. The structural, surface morphological, optical, mechanical, and electrical properties of the films were investigated. X-ray diffraction (XRD) analysis showed that the copper sulfide films were close to copper-rich phase (Cu2S). Increased crystallite size after heat and laser treatment was confirmed by XRD analysis and scanning electron microscopy. Vickers hardness measurements showed that the samples' hardness values were enhanced with increasing crystallite size, representing an inverse Hall-Petch (H-P) effect. The calculated optical bandgap of the treated films was lower than that of the deposited film. Finally, it was found that both heat and laser treatment enhanced the physical properties of the sprayed Cu2S films on polyimide substrate for use in solar energy applications.

  3. Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

    DOEpatents

    Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

    1995-01-01

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

  4. Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

    DOEpatents

    Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

    1995-08-15

    A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

  5. Fabrication of solar cells based on Cu2ZnSnS4 prepared from Cu2SnS3 synthesized using a novel chemical procedure

    NASA Astrophysics Data System (ADS)

    Correa, John M.; Becerra, Raúl A.; Ramírez, Asdrubal A.; Gordillo, Gerardo

    2016-11-01

    Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films were fabricated using a chemical route to prepare the CZTS films, consisting in sequential deposition of Cu2SnS3 (CTS) and ZnS thin films followed by annealing at 550 °C in nitrogen atmosphere. The CTS compound was prepared in a one-step process using a novel chemical procedure consisting of simultaneous precipitation of Cu2S and SnS2 performed by diffusion membranes assisted CBD (chemical bath deposition) technique. Diffusion membranes were used to optimize the kinetic growth through a moderate control of release of metal ions into the work solution. As the conditions for the formation in one step of the Cu2SnS3 compound have not yet been reported in literature, special emphasis was put on finding the parameters that allow growing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S and SnS2. For that, we propose a methodology that includes numerical solution of the equilibrium equations that were established through a study of the chemical equilibrium of the system SnCl2, Na3C6H5O7·2H2O, CuCl2 and Na2S2O3·5H2O. The formation of thin films of CTS and CZTS free of secondary phases grown with a stoichiometry close to that corresponding to the Cu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements of X-ray diffraction (XRD) and Raman spectroscopy. Solar cell with an efficiency of 4.2%, short circuit current of 16.2 mA/cm2 and open-circuit voltage of 0.49 V was obtained.

  6. Induced Ferromagnetism at BiFeO 3/YBa 2Cu 3O 7 Interfaces

    DOE PAGES

    Zhu, Jian-Xin; Wen, Xiao-Dong; Haraldsen, J. T.; ...

    2014-06-20

    We report that transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO 3/YBa 2Cu 3O 7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFeO 3, we are able to show that a metallic ferromagnetism is induced near the interface. We further develop an interface exchange-coupling model and place the extracted exchange coupling interactionmore » strengths, from the first-principles calculations, into a resultant generic phase diagram. Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hysteresis loop in field-dependent magnetization data. Lastly, the emergence of interfacial ferromagnetism should have implications to electronic and transport properties.« less

  7. Colloidal CuInSe2 nanocrystals thin films of low surface roughness

    NASA Astrophysics Data System (ADS)

    de Kergommeaux, Antoine; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

    2013-03-01

    Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. Invited talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

  8. Facile fabrication of Cu(II)-porphyrin MOF thin films from tetrakis(4-carboxyphenyl)porphyrin and Cu(OH)2 nanoneedle array

    NASA Astrophysics Data System (ADS)

    La, Duong Duc; Thi, Hoai Phuong Nguyen; Kim, Yong Shin; Rananaware, Anushri; Bhosale, Sheshanath V.

    2017-12-01

    Herein, we report a facile synthetic protocol to grow thin films of Cu(II) tetrakis(4-carboxyphenyl)porphyrin (CuTCPP) metal-organic frameworks (MOF) from a tetrakis(4-carboxyphenyl)porphyrin (H2TCPP) solution and the copper hydroxide (Cu(OH)2) nanoneedle array formed on a Cu substrate at room temperature. The formations of Cu-centered TCPP ligands and crystalline platelet-like Cu MOFs were successfully probed by SEM, XRD, FTIR, UV-vis and XPS. The formation process from Cu(OH)2 was monitored by using SEM images obtained at different reaction times during the first 24 h, thus suggesting the reaction pathway of Cu(OH)2 dissolution followed by the reprecipitation of CuTCPP MOFs at a near surface. In addition, the CuTCPP MOFs exhibited a high specific surface area of 408 m2/g.

  9. Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

    2018-03-01

    Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

  10. Effect of deposition time of sputtering Ag-Cu thin film on mechanical and antimicrobial properties

    NASA Astrophysics Data System (ADS)

    Purniawan, A.; Hermastuti, R.; Purwaningsih, H.; Atmono, T. M.

    2018-04-01

    Metallic implants are important components in biomedical treatment. However, post-surgery infection often occurs after installation of implant. The infections are usually treated by antibiotics, but it still causes several secondary problems. As a prevention treatment, the surgical instruments and implants must be in a sterile condition. This action is still not optimal too because the material still can attract the bacteria. From material science point of view, it can be anticipated by developing a type of material which has antibacterial properties or called antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent the infection. In this research, the influence of deposition time of Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method was analyzed. Deposition time used were for 10, 15 and 20 minutes in Argon gas pressure around 3 x 10-2 mbar in during deposition process. The morphology and surface roughness of Ag-Cu thin film were characterized using SEM and AFM. Based on the results, the deposition time influences the quality morphology that the thin films have good homogeneity and complete structure for longer deposition time. In addition, from roughness measurement results show that increase deposition time decrease the roughness of thin film. Antimicrobial performance was analyzed using Kirby Bauer Test. The results show that all of sample have good antimicrobial inhibition. Adhesion quality was evaluated using Rockwell C Indentation Test. However, the results indicate that the Ag-Cu thin film has low adhesion strength.

  11. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    NASA Technical Reports Server (NTRS)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  12. CuInSe2-Based Thin-Film Photovoltaic Technology in the Gigawatt Production Era

    NASA Astrophysics Data System (ADS)

    Kushiya, Katsumi

    2012-10-01

    The objective of this paper is to review current status and future prospect on CuInSe2 (CIS)-based thin-film photovoltaic (PV) technology. In CIS-based thin-film PV technology, total-area cell efficiency in a small-area (i.e., smaller than 1 cm2) solar cell with top grids has been over 20%, while aperture-area efficiency in a large-area (i.e., larger than 800 cm2 as definition) monolithic module is approaching to an 18% milestone. However, most of the companies with CIS-based thin-film PV technology still stay at a production research stage, except Solar Frontier K.K. In July, 2011, Solar Frontier has joined the gigawatt (GW) group by starting up their third facility with a 0.9-GW/year production capacity. They are keeping the closest position to pass a 16% module-efficiency border by transferring the developed technologies in the R&D and accelerating the preparation for the future based on the concept of a product life-cycle management.

  13. Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures.

    PubMed

    Gray, B A; Middey, S; Conti, G; Gray, A X; Kuo, C-T; Kaiser, A M; Ueda, S; Kobayashi, K; Meyers, D; Kareev, M; Tung, I C; Liu, Jian; Fadley, C S; Chakhalian, J; Freeland, J W

    2016-09-15

    The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa2Cu3O7 (YBCO) and colossal magnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.

  14. Thermodynamic evidence for the Bose glass transition in twinned YBa 2 Cu 3 O 7 - δ crystals

    DOE PAGES

    Pérez-Morelo, D. J.; Osquiguil, E.; Kolton, A. B.; ...

    2015-07-21

    We used a micromechanical torsional o scillator to measure the magnetic response of a twinned YBaBa2Cu3O7-δ single crystal disk near the Bose glass transition. We observe an anomaly in the temperature dependence of the magnetization consistent with the appearance of a magnetic shielding perpendicular to the correlated pinning of the twin boundaries. This effect is related to the thermodynamic transition from the vortex liquid phase to a Bose glass state.

  15. Valence charge fluctuations in YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ from core-level spectroscopies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Balzarotti, A.; De Crescenzi, M.; Motta, N.

    1988-10-01

    From x-ray photoemission and Auger measurements of the Cu 2p and O 1s core levels of YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ as a function of the oxygen concentration delta, the average copper charge is determined. Evidence is found of dynamic charge fluctuations on the oxygen sublattice giving rise to a greater concentration of trivalent copper at the Cu(1) sites with respect to that determined by the analysis of neutron-diffraction data. On the basis of our experimental results, we introduce a molecular cluster description for the Cu states. The lowest final-states configurations of Cu/sup 2+/ and Cu/sup 3+/ are c3d/sup 10/Lmore » and c3d/sup 10/L/sup 2/, respectively, where c and L denote core holes on copper and oxygen atoms. Oxygen holes have high mobility and a Hubbard correlation energy less than 2 eV, a signature of their delocalization. The effect of temperature on the spectra is minor. Surface degradation modifies the relative intensity of the structures, particularly those of the O spectrum.« less

  16. Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

    NASA Technical Reports Server (NTRS)

    Davis, M. F.; Wosik, J.; Forster, K.; Deshmukh, S. C.; Rampersad, H. R.

    1991-01-01

    The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

  17. Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

    NASA Astrophysics Data System (ADS)

    Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

    2017-11-01

    The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

  18. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  19. Cu-doped CdS and its application in CdTe thin film solar cell

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Deng, Yi; College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212; Yang, Jun

    2016-01-15

    Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atommore » hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.« less

  20. Structural characterization and optical constants of CuIn3Se5 vacuum and air annealed thin films

    NASA Astrophysics Data System (ADS)

    Segmane, N. E. H.; Abdelkader, D.; Amara, A.; Drici, A.; Akkari, F. Chaffar; Khemiri, N.; Bououdina, M.; Kanzari, M.; Bernède, J. C.

    2018-01-01

    Milled powder of ordered defect compound (ODC) CuIn3Se5 phase was successfully synthesized via milling process. Thin films of CuIn3Se5 were deposited onto glass substrates at room temperature by thermal evaporation technique. The obtained layers were annealed in vacuum and air atmosphere. The structural and compositional properties of the powder were analyzed using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Powder XRD characterization, Rietveld analysis and chemical bounding confirm the tetragonal ordered defect compound phase formation with lattice constants a = 5.732 Å and c = 11.575 Å. Thin films were characterized by XRD, atomic force microscopy (AFM) and UV/Vis spectroscopy. Transmittance (T) and reflectance (R) spectra were measured in the spectral range of 300-1800 nm. The absorption coefficient α exhibits high values in the visible range and reaches a value of 105 cm-1. The band gap energy Eg of the annealed thin films is estimated to be approximately 1.75 eV. The refractive index n was estimated from transmittance data using Swanepoel's method. The refractive indices of the films as a function of wavelengths can be fitted with Cauchy dispersion equation. The oscillator energy E0, dispersion energy Ed, zero frequency refractive index n0, high frequency dielectric constant ε∞ and the carrier concentration per effective mass N/m∗ values were determined from the analysis of the experimental data using Wemple-DiDomenico and Spitzer-Fan models. We exploited the refractive index dispersion for the determination of the magneto-optical constant V, which characterizes the Faraday rotation. The nonlinear optical parameters namely nonlinear susceptibility χ(3), nonlinear refractive index and nonlinear absorption coefficient β are investigated for the first time for CuIn3Se5 material.

  1. Growth of <111>-oriented Cu layer on thin TaWN films

    NASA Astrophysics Data System (ADS)

    Takeyama, Mayumi B.; Sato, Masaru

    2017-07-01

    In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

  2. Pulsed—Laser Deposition Of Oxide Thin Films And Laser—Induced Breakdown Spectroscopy Of Multi—Element Materials

    NASA Astrophysics Data System (ADS)

    Pedarnig, Johannes D.

    2010-10-01

    New results of the Linz group on pulsed—laser deposition (PLD) of oxide thin films and on laser—induced breakdown spectroscopy (LIBS) of multi-element materials are reported. High-Tc superconducting (HTS) films with enhanced critical current density Jc are produced by laser ablation of novel nano-composite ceramic targets. The targets contain insulating nano-particles that are embedded into the YBa2Cu3O7 matrix. Epitaxial double-layers of lithium-doped and aluminum-doped ZnO are deposited on r-cut sapphire substrates. Acoustic over-modes in the GHz range are excited by piezoelectric actuation of layers. Smooth films of rare-earth doped glass are produced by F2—laser ablation. The transport properties of HTS thin films are modified by light—ion irradiation. Thin film nano—patterning is achieved by masked ion beam irradiation. LIBS is employed to analyze trace elements in industrial iron oxide powder and reference polymer materials. Various trace elements of ppm concentration are measured in the UV/VIS and vacuum-UV spectral range. Quantitative LIBS analysis of major components in oxide materials is performed by calibration-free methods.

  3. A comparison study of Co and Cu doped MgO diluted magnetic thin films

    NASA Astrophysics Data System (ADS)

    Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

    2017-02-01

    Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

  4. High-Resolution AES Mapping and TEM Study of Cu(In,Ga)Se2 Thin Film Growth: Preprint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Perkins, C. L.; Yan, Y.; Jones, K.

    2001-10-01

    Presented at 2001 NCPV Program Review Meeting: TEM and high-resolution AES mapping data on CIGS samples. The chalcopyrite Cu(In,Ga)Se{sub 2} (CIGS) shows promise as an absorber layer in thin polycrystalline solar cells, however, details of the PVD growth of this complicated material remain in a developing stage. Previous workers have postulated the existence of a thin film of liquid Cu{sub x}Se on the growing CIGS film, and that this layer acts as a reservoir of copper as well as a layer in which rapid mass transport is possible. In this paper we present transmission electron microscopy (TEM) and high resolutionmore » Auger electron spectroscopy (AES) mapping data taken on samples that had their growth interrupted at a stage when Cu{sub x}Se was expected to be present. The AES maps show CIGS grains which are highly enriched in copper relative to the rest of the CIGS film, and that these same areas contain almost no indium, results consistent with the presence of CuxSe. Small-area diffraction analysis and energy dispersive spectroscopy (EDS) performed on these same samples independently confirm the presence of Cu{sub x}Se at the surface of growing CIGS films.« less

  5. Fabrication of Large Domain YBa2Cu3O(x) for Magnetic Suspension Applications

    NASA Technical Reports Server (NTRS)

    Sengupta, S.; Corpus, J.; Gaines, J. R., Jr.; Todt, V. R.; Zhang, X.; Miller, D. J.

    1996-01-01

    Large domain YBa2Cu3O(x) levitators have been fabricated using a seeded melt processing technique. Depending upon the seed, either a single or five domained sample can be obtained. The grain boundaries separating each domains in the five domain levitator are found to be 90 degrees. Similar levitation forces can be observed for single and five domained samples. After thermal cycling, however, a small decrease in the levitation force of the five domain levitator was observed as a function of thermal cycles while nearly no change in force was observed in the single domain levitator. Finally, it is shown that both, single and five domain YBCO, behave similarly as a function of sample thickness.

  6. Influence of planar macrodefects on the anisotropy of magnetic-flux penetration in YBa 2Cu 3O 7-δ

    NASA Astrophysics Data System (ADS)

    Cuche, E.; Indenbom, M. V.; André, M.-O.; Richard, P.; Benoit, W.; Wolf, Th.

    1996-02-01

    The magnetic flux penetration in a high-quality YBa 2Cu 3O 7-δ single crystal with an external field applied perpendicular to the crystalline c axis is directly visualized by means of the magneto-optical technique. The observations show that the field penetrates preferentially along the ab planes. Scanning acoustic microscopy reveals macrodefects along ab planes which strongly affect this anisotropy of the field penetration.

  7. Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

    NASA Technical Reports Server (NTRS)

    Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

    1992-01-01

    The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

  8. Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

    NASA Technical Reports Server (NTRS)

    Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

    1998-01-01

    Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

  9. Synthesis, Optical and Photoluminescence Properties of Cu-Doped Zno Nano-Fibers Thin Films: Nonlinear Optics

    NASA Astrophysics Data System (ADS)

    Ganesh, V.; Salem, G. F.; Yahia, I. S.; Yakuphanoglu, F.

    2018-03-01

    Different concentrations of copper-doped zinc oxide thin films were coated on a glass substrate by sol-gel/spin-coating technique. The structural properties of pure and Cu-doped ZnO films were characterized by different techniques, i.e., atomic force microscopy (AFM), photoluminescence and UV-Vis-NIR spectroscopy. The AFM study revealed that pure and doped ZnO films are formed as nano-fibers with a granular structure. The photoluminescence spectra of these films showed a strong ultraviolet emission peak centered at 392 nm and a strong blue emission peak cantered at 450 nm. The optical band gap of the pure and copper-doped ZnO thin films calculated from optical transmission spectra (3.29-3.23 eV) were found to be increasing with increasing copper doping concentration. The refractive index dispersion curve of pure and Cu-doped ZnO film obeyed the single-oscillator model. The optical dispersion parameters such as E o , E d , and n_{∞}2 were calculated. Further, the nonlinear refractive index and nonlinear optical susceptibility were also calculated and interpreted.

  10. The effect of thin film morphology on the electrochemical performance of Cu-Sn anode for lithium rechargeable batteries.

    PubMed

    Polat, B D; Keleş, O

    2014-05-01

    We investigate the anode performance of non ordered and ordered nanostructured Cu-Sn thin films deposited via electron beam deposition technique. The ordered nanostructured Cu-Sn thin film having nano-porosities was fabricated using an oblique (co)deposition technique. Our results showed that the nano structured Cu-Sn thin film containing Cu-Sn nanorods had higher initial anodic capacity (790 mA h g(-)) than that of the non ordered thin film (330 mA h g(-)). But the capacity of the ordered nanostructured Cu-Sn thin film diminished after the first cycle and a steady state capacity value around 300 mA h g(-) is sustainable in following up to 80th cycle, which is attributed to the composition and morphology of the thin film. The presence of copper containing Sn nanorods leading to form nano-porosities as interstitial spaces among them, enhanced lithium ions movement within thin film and increased the thin film tolerance against the stress generated because of the drastic volume change occurred during lithiation-delithiation processes; hence, homogenously distributed porosities increased the cycle life of the thin film.

  11. A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mukherjee, Nillohit; Sinha, Arijit; Khan, Gobinda Gopal

    2011-01-15

    We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH{sub 3}COO){sub 2}, SC(NH{sub 2}){sub 2} and N(CH{sub 2}CH{sub 2}OH){sub 3} [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes withinmore » 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.« less

  12. Structural and magnetic properties of epitaxial delafossite CuFeO2 thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Senty, Tess; Joshi, Toyanath; Trappen, Robbyn; Zhou, Jinling; Chen, Song; Ferrari, Piero; Borisov, Pavel; Song, Xueyan; Holcomb, Mikel; Bristow, Alan; Cabrera, Alejandro; Lederman, David

    2015-03-01

    Growth of pure phase delafossite CuFeO2 thin films on Al2O3 (00.1) substrates by pulsed laser deposition was systematically investigated as function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO2 films demonstrated a phase transition at TC = 15K, which agrees with the first antiferromagnetic transition at 14K in the bulk CuFeO2. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract #2013-MA-2382) at WVU. Work at PUC was supported by FONDECyT.

  13. Magnetic Quantum Oscillations in YBa2Cu3O6.61 and YBa2Cu3O6.69 in Fields of Up to 85 T: Patching the Hole in the Roof of the Superconducting Dome

    NASA Astrophysics Data System (ADS)

    Singleton, John; de La Cruz, Clarina; McDonald, R. D.; Li, Shiliang; Altarawneh, Moaz; Goddard, Paul; Franke, Isabel; Rickel, Dwight; Mielke, C. H.; Yao, Xin; Dai, Pengcheng

    2010-02-01

    We measure magnetic quantum oscillations in the underdoped cuprates YBa2Cu3O6+x with x=0.61, 0.69, using fields of up to 85 T. The quantum-oscillation frequencies and effective masses obtained suggest that the Fermi energy in the cuprates has a maximum at hole doping p≈0.11-0.12. On either side, the effective mass may diverge, possibly due to phase transitions associated with the T=0 limit of the metal-insulator crossover (low-p side), and the postulated topological transition from small to large Fermi surface close to optimal doping (high p side).

  14. Effect of hydrogen intercalation on the critical parameters of YBa2Cu3O y

    NASA Astrophysics Data System (ADS)

    Bobylev, I. B.; Gerasimov, E. G.; Zyuzeva, N. A.; Terent'ev, P. B.

    2017-10-01

    The effect of hydrogenation at T = 150 and 200°C on the electrophysical properties of highly textured YBa2Cu3O y ceramics with different oxygen content has been investigated. Like hydration, hydrogenation results in the deterioration of these properties. However, in samples with high oxygen contents ( y = 6.96) hydrogenated at T = 150°C after oxidation (400°C) or recovery annealing with subsequent oxidation, the critical current density and first critical field increase compared to the initial state. The improvement of the properties occurs mainly in a magnetic field applied perpendicularly to the c axis. As after hydration, this is connected with the formation of planar defects in the course of low-temperature annealing. In addition, in the process of the hydrogenation, the partial reduction of copper occurs with the formation of microinclusions of Cu2O and other products of chemical decomposition, which are extra pinning centers of magnetic vortices.

  15. Defects and anharmonicity induced electron spectra of YBa2Cu3O7-δ superconductors

    NASA Astrophysics Data System (ADS)

    Singh, Anu; Indu, B. D.

    2018-05-01

    The effects of defects and anharmonicities on the electron density of states (EDOS) have been studied in high-temperature superconductors (HTS) adopting the many body quantum dynamical theory of electron Green's functions via a generalized Hamiltonian that includes the effects of electron-phonon interactions, anharmonicities and point impurities. The automatic emergence of pairons and temperature dependence of EDOS are appear as special feature of the theory. The results thus obtained and their numerical analysis for YBa2Cu3O7-δ superconductors clearly demonstrate that the presence of defects, anharmonicities and electron-phonon interactions modifies the behavior of EDOS over a wide range of temperature.

  16. Synthesis and microstructural TEM investigation of CaCu 3Ru 4O 12 ceramic and thin film

    NASA Astrophysics Data System (ADS)

    Brizé, Virginie; Autret-Lambert, Cécile; Wolfman, Jérôme; Gervais, Monique; Gervais, François

    2011-10-01

    CaCu 3Ru 4O 12 (CCRO) is a conductive oxide having the same structure as CaCu 3Ti 4O 12 (CCTO) and close lattice parameters. The later compound is strongly considered for high density parallel plates capacitors application due to its so-called colossal dielectric constant. The need for an electrode inducing CCTO epitaxial growth with a clean and sharp interface is therefore necessary, and CCRO is a good potential candidate. In this paper, the synthesis of monophasic CCRO ceramic is reported, as well as pulsed laser deposition of CCRO thin film onto (001) NdCaAlO 4 substrate. Structural and physical properties of bulk CCRO were studied by transmission electron microscopy and electron spin resonance. CCRO films and ceramic exhibited a metallic behavior down to low temperature. CCRO films were (001) oriented and promoted a CCTO film growth with the same orientation.

  17. Electrical contacts to thin layers of Bi2Sr2CaCu2O8+δ

    NASA Astrophysics Data System (ADS)

    Suzuki, Shota; Taniguchi, Hiroki; Kawakami, Tsukasa; Cosset-Cheneau, Maxen; Arakawa, Tomonori; Miyasaka, Shigeki; Tajima, Setsuko; Niimi, Yasuhiro; Kobayashi, Kensuke

    2018-05-01

    Thin layers of Bi2Sr2CaCu2O8+δ (Bi2212) were fabricated using the mechanical exfoliation technique. Good electrical contacts to the thin Bi2212 films with low contact resistance were realized by depositing Ag and Au electrodes onto the Bi2212 films and annealing them with an oxygen flow at 350 °C for 30 min. We observed cross-section images of the Bi2212 thin film device using a transmission electron microscope to characterize the diffusion of Ag and Au atoms into the Bi2212 thin film.

  18. High Tc superconducting IR detectors from Y-Ba-Cu-O thin films

    NASA Technical Reports Server (NTRS)

    Lindgren, M.; Ahlberg, H.; Danerud, M.; Larsson, A.; Eng, M.

    1990-01-01

    A thin-film high-Tc superconducting multielement optical detector made of Y-Ba-Cu-O has been designed and evaluated using optical pulses from a diode laser (830 nm) and a Q-switched CO2-laser (10.6 microns). Different thin films have been tested. A laser deposited film showed the strongest response amplitude for short pulses and responded to an ultrafast, 50 ps wide pulse. Comparisons between dR/dT and response as a function of temperature indicated, however, a bolometric response.

  19. Impact of planetary ball milling parameters on the microstructure and pinning properties of polycrystalline superconductor Y3Ba5Cu8Oy

    NASA Astrophysics Data System (ADS)

    Slimani, Y.; Hannachi, E.; Azzouz, F. Ben; Salem, M. Ben

    2018-06-01

    We have reported the influence of planetary high energy ball milling parameters on morphology, microstructure and flux pinning capability of polycrystalline Y3Ba5Cu8Oy. Samples were prepared through the standard solid-state reaction by using two different milling methods, ball milling in a planetary crusher and hand grinding in a mortar. Phase analysis by X-ray diffraction (XRD) method, microstructural examination by scanning electron microscope (SEM), electrical resistivity, the global and intra-granular critical current densities measurements are done to characterize the samples. The processing parameters of the planetary milling have a considerable impact on the final product properties. SEM observations show the presence of nanoscale entities submerged within the Y3Ba5Cu8Oy crystallites. The results show that the fine grain microstructure of the Y3Ba5Cu8Oy bulk induced by ball milling process contributes to critical currents density enhancement in the magnetic field and promotes an optimized flux pinning ability.

  20. The influence of external factors on the corrosion resistance of high temperature superconductor thin films against moisture

    NASA Astrophysics Data System (ADS)

    Murugesan, M.; Obara, H.; Yamasaki, H.; Kosaka, S.

    2006-12-01

    High temperature superconductor (HTS) thin films have been systematically investigated for their corrosion resistance against moisture by studying the role of external factors such as temperature (T), relative humidity (RH), and the type of substrates in the corrosion. In general, (i) the corrosion is progressed monotonously with increasing T as well as RH, (ii) a threshold level of water vapor is needed to cause degradation, and (iii) between T and RH, the influence of T is more dominant. HTS films on SrTiO3 and CeO2 buffered sapphire (cbs) substrates showed better corrosion stability and a low rate of degradation in the critical current density as compared to that of the film grown on MgO substrate. Between DyBa2Cu3Oz (DBCO) and YBa2Cu3Oz, the former is reproducibly found to have many fold higher corrosion resistance against moisture. This observed enhancement in the corrosion resistance in DBCO could be explained by the improved microstructure in the films and the better lattice matching with the substrate. Thus, the dual advantage of DBCO/cbs films, i.e., the enhanced corrosion stability of DBCO and the appropriate dielectric properties of sapphire, can be readily exploited for the use of DBCO/cbs films in the microwave and power devices.

  1. Comparison of the agglomeration behavior of thin metallic films on SiO2

    NASA Astrophysics Data System (ADS)

    Gadkari, P. R.; Warren, A. P.; Todi, R. M.; Petrova, R. V.; Coffey, K. R.

    2005-07-01

    The stability of continuous metallic thin films on insulating oxide surfaces is of interest to applications such as semiconductor interconnections and gate engineering. In this work, we report the study of the formation of voids and agglomeration of initially continuous Cu, Au, Ru and Pt thin films deposited on amorphous thermally grown SiO2 surfaces. Polycrystalline thin films having thicknesses in the range of 10-100 nm were ultrahigh vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150-800 °C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all of the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play an important part in deciding the mode of void growth in Au and Pt thin films. Last, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer.

  2. Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

    NASA Technical Reports Server (NTRS)

    Grabow, B. E.; Sova, R. M.; Boone, B. G.; Moorjani, K.; Kim, B. F.; Bohandy, J.; Adrian, F.; Green, W. J.

    1990-01-01

    Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation, and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

  3. Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

    NASA Technical Reports Server (NTRS)

    Grabow, B. E.; Sova, R. M.; Boone, B. G.; Moorjani, K.; Kim, B. F.; Bohandy, J.; Adrian, F.; Green, W. J.

    1991-01-01

    Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching, and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation; and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

  4. Superconductor to Mott insulator transition in YBa 2Cu 3O 7/LaCaMnO 3 heterostructures

    DOE PAGES

    Gray, B. A.; Middey, S.; Conti, G.; ...

    2016-09-15

    The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In this paper, in pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high Tc superconductor YBa 2Cu 3O 7 (YBCO) and colossal magnetoresistance ferromagnet La 0.67Ca 0.33MnO 3 (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping inmore » cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may respond to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Finally, such deterministic control of Tc by pure electronic doping without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.« less

  5. Temperature-assisted morphological transition in CuPc thin films

    NASA Astrophysics Data System (ADS)

    Bae, Yu Jeong; Pham, Thi Kim Hang; Kim, Tae Hee

    2016-05-01

    Ex-situ and in-situ morphological analyses were performed for Cu-phthalocyanine (CuPc) organic semiconductor films by using atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED). The focus was the effects of post-annealing on the structural characteristics of CuPc films grown on MgO(001) layers by using an ultra-high-vacuum thermal evaporator. Sphere-to-nanofibril and 2-D to 3-D morphological transitions were observed with increasing CuPc thickness beyond 3 nm. The surface morphology and the crystallinity were drastically improved after an additional cooling of the post-annealed CuPc films thinner than 3 nm. Our results highlight that molecular orientation and structural ordering can be effectively controlled by using different temperature treatments and a proper combination of material, film thickness, and substrate.

  6. Solution-Based Approaches to Fabrication of YBa2Cu3O7-δ (YBCO): Precursors of Tri-Fluoroacetate (TFA) and Nanoparticle Colloids

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, S. M.; Su, J.; Chintamaneni, V.

    2007-10-01

    Detailed investigation of superconducting films of YBa2Cu3O7-δ (YBCO) prepared from solution-based precursors have been performed. Two precursors have been compared in this study: the presently used trifluoroacetate (TFA) solution and a recently developed colloidal suspension containing nanoparticles of mixed oxide. Detailed analyses of the evolution of microstructure and chemistry of the films have been performed, and process parameters have been correlated with final superconducting properties. Both films need two heating steps: a low temperature calcination and a higher temperature crystallization step. For TFA films, it was seen that the heating rate during calcination needs to be carefully optimized and is expected to be slow. For the alternate process using a nanoparticle precursor, a significantly faster calcination rate is possible. In the TFA process, the Ba ion remains as fluoride and the Y remains as oxyfluoride after calcination. This implies that, during the final crystallization stage to form YBCO, fluorine-containing gases will evolve, resulting in residual porosity. On the other hand, the film from the nanoparticle process is almost fully oxidized after calcination. Therefore, no gases evolve at the final firing (crystallization) stage, and the film has much lower porosity. The superconducting properties of both types of films are adequate, but the nanoparticle films appear to have persistently higher J c values. Moreover, they show improved flux pinning in higher magnetic fields, probably due to nanoscale precipitates of a Cu-rich phase. In addition, the nanocolloid films seem to show additionally enhanced flux pinning when doped with minute amounts of second phase precipitates. It therefore appears that, whereas the TFA process is already quite successful, the newly developed nanoparticle process has significant scope for additional improvement. It can be scaled-up with ease, and can be easily adapted to incorporate nanoscale flux pinning defects

  7. Origin of colossal dielectric response of CaCu3Ti4O12 studied by using CaTiO3/CaCu3Ti4O12/CaTiO3 multilayer thin films

    NASA Astrophysics Data System (ADS)

    Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro

    2007-06-01

    To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

  8. Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

    NASA Astrophysics Data System (ADS)

    Shimizu, Yuhei; Tonooka, Kazuhiko; Yoshida, Yoshiyuki; Furuse, Mitsuho; Takashima, Hiroshi

    2018-06-01

    With the eventual aim of forming joints between superconducting wires of YBa2Cu3O7-δ (YBCO), thin films of Nb were grown at room-temperature on SrTiO3 (STO) (0 0 1), a single-crystal substrate that shows good lattice matching with YBCO. The crystallinity, surface morphology, and superconducting properties of the Nb thin films were investigated and compared with those of similar films grown on a silica glass substrate. The Nb thin films grew with an (hh0) orientation on both substrates. The crystallinity of the Nb thin films on the STO substrate was higher than that on the silica glass substrate. X-ray diffraction measurements and observation of the surface morphology by atomic-force microscopy indicated that Nb grew in the plane along the [1 0 0] and [0 1 0] directions of the STO substrate. This growth mode relaxes strain between Nb and STO, and is believed to lead to the high crystallinity observed. As a result, the Nb thin films on the STO substrates showed lower electric resistivity and a higher superconducting transition temperature than did those on the silica glass substrates. The results of this study should be useful in relation to the production of superconducting joints.

  9. Role of target-substrate distance on the growth of CuInSe{sub 2} thin films by pulsed laser ablation technique

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rawat, Kusum; Dhruvashi; Department of Electronic Science, University of Delhi South Campus, Delhi 110021

    2016-05-06

    CuInSe{sub 2} thin films have been deposited on corning glass substrates by pulsed laser ablation technique. The chamber pressure and substrate temperature was maintained at 1 × 10{sup −6} torr and 550°C respectively during deposition of the films. The influence of target to substrate (T-S) distance on the structural and optical properties of thin films have been investigated by grazing incidence x-ray diffraction, Raman spectroscopy, scanning electron microscope and UV-Vis-NIR spectroscopy. The study reveals that thin films crystallized in a chalcopyrite structure with highly preferential orientation along (112) plane. Optimum T-S distance has been attained for the growth of thinmore » films with large grain size. An intense Raman peak at 174 cm{sup −1} corresponding to dominant A{sub 1} vibration mode is gradually shifted to smaller wavenumber with the increase in T-S distance. The optical bandgap energy of the films was evaluated and found to vary with the T-S distance. The bandgap tailing was observed to obey the Urbach rule and the Urbach energy was also calculated for the films. Scanning electron micrographs depicts uniform densely packed grains and EDAX studies revealed the elemental composition of CuInSe{sub 2} thin films.« less

  10. Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; He, Zhangbin; Muralt, Paul

    2009-04-01

    The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 (CCTO) thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor defect at a level ˜90 meV higher than valence band. Two contact types, metal-semiconductor and metal-insulator-semiconductor junctions, were observed and their barrier heights, and impurity concentrations were theoretically calculated. Accordingly, the Schottky barrier height of metal-semiconductor contact is about 0.8 eV, and the diffusion barrier height of metal-insulator-semiconductor contact is about 0.4-0.7 eV. The defect concentrations of both samples are quite similar, of the magnitude of 1019 cm-3, indicating an inherent feature of high defect concentration.

  11. Fabrication of YBa2Cu3O7 twin-boundary-junction dc SQUID by using a focused-ion-beam pattern technique

    NASA Astrophysics Data System (ADS)

    Lee, Sung Hoon; Lee, Soon-Gul

    2017-09-01

    We have fabricated YBa2Cu3O7 (YBCO) dc SQUIDs containing nanobridges across twin boundaries of LaAlO3 (LAO) substrates as Josephson elements by using a focused ion beam (FIB) etching method and measured their transport properties. The beam energy was 30 keV and the current was 1.5 pA for the nanobridge pattern. Each bridge with a nominal width of 200 nm crossed a twin boundary in the (100) direction. The SQUID loop had a 10 μm × 10 μm hole with a 5.7 μm average linewidth. The SQUID voltage showed modulations in response to the external flux with a maximum modulation depth of 350 μV at 77.0 K. HR-XRD spectra showed that the epitaxially grown YBCO film was twinned in commensurate with the twinning of the LAO substrate. Tilting of the c-axis of YBCO across the twin boundary is believed to play a role as a tunnel barrier.

  12. Effect of annealing on structure, morphology and optoelectronic properties of nanocrystalline CuO thin films

    NASA Astrophysics Data System (ADS)

    Jundale, D. M.; Pawar, S. G.; Patil, S. L.; Chougule, M. A.; Godse, P. R.; Patil, V. B.

    2011-10-01

    The nanocrystalline CuO thin films were prepared on glass substrates by the sol-gel method. The structural, morphological, electrical and optical properties of CuO thin films, submitted to an annealing treatment in the 400-700 °C ranges are studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe Technique and UV-visible spectroscopic. XRD measurements show that all the films are crystallized in the monoclinic phase and present a random orientation. Four prominent peaks, corresponding to the (110) phase (2θ≈32.70°), (002) phase (2θ≈35.70°), (111) phase (2θ≈38.76°) and (202) phase (2θ≈49.06°) appear on the diffractograms. The crystallite size increases with increasing annealing temperature. These modifications influence the microstructure, electrical and optical properties. The optical band gap energy decreases with increasing annealing temperature. These mean that the optical quality of CuO films is improved by annealing.

  13. Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se2 thin films absorber layers using two step growth process

    NASA Astrophysics Data System (ADS)

    Korir, Peter C.; Dejene, Francis B.

    2018-04-01

    In this work two step growth process was used to prepare Cu(In, Ga)Se2 thin film for solar cell applications. The first step involves deposition of Cu-In-Ga precursor films followed by the selenization process under vacuum using elemental selenium vapor to form Cu(In,Ga)Se2 film. The growth process was done at a fixed temperature of 515 °C for 45, 60 and 90 min to control film thickness and gallium incorporation into the absorber layer film. The X-ray diffraction (XRD) pattern confirms single-phase Cu(In,Ga)Se2 film for all the three samples and no secondary phases were observed. A shift in the diffraction peaks to higher 2θ (2 theta) values is observed for the thin films compared to that of pure CuInSe2. The surface morphology of the resulting film grown for 60 min was characterized by the presence of uniform large grain size particles, which are typical for device quality material. Photoluminescence spectra show the shifting of emission peaks to higher energies for longer duration of selenization attributed to the incorporation of more gallium into the CuInSe2 crystal structure. Electron probe microanalysis (EPMA) revealed a uniform distribution of the elements through the surface of the film. The elemental ratio of Cu/(In + Ga) and Se/Cu + In + Ga strongly depends on the selenization time. The Cu/In + Ga ratio for the 60 min film is 0.88 which is in the range of the values (0.75-0.98) for best solar cell device performances.

  14. A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

    NASA Technical Reports Server (NTRS)

    Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

    1998-01-01

    We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

  15. Electrodeposition Process and Performance of CuIn(Se x S1- x )2 Film for Absorption Layer of Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Li, Libo; Yang, Xueying; Gao, Guanxiong; Wang, Wentao; You, Jun

    2017-11-01

    CuIn(Se x S1- x )2 thin film is prepared by the electrodeposition method for the absorption layer of the solar cell. The CuIn(Se x S1- x )2 films are characterized by cyclic voltammetry measurement for the reduction of copper, indium, selenium and sulfur in selenium and sulfur in aqueous solutions with sodium citrate and without sodium citrate. In the four cases, the defined reduction process for every single element is obtained and it is observed that sodium citrate changes the reduction potentials. A linear relationship between the current density of the reduction peak and (scan rate v)1/2 for copper and indium is achieved, indicating that the process is diffusion controlled. The diffusion coefficients of copper and indium ions are calculated. The diffusional coefficient D value of copper is higher than that of indium, and this is the reason why the deposition rate of copper is higher. When four elements are co-deposited in the aqueous solution with sodium citrate, the quaternary compound of CuIn(Se x S1- x )2 is deposited together with Cu3Se2 impure phases after annealing, as found by XRD spectra. Morphology is observed by SEM and AFM. The chemical state of the films components is analyzed by XPS. The UV-Visible spectrophotometer and electrochemistry workstation are employed to measure the photoelectric properties. The results show that the smooth, uniform and compact CuIn(Se x S1- x )2 film is a semiconductor with a band gap of 1.49 eV and a photovoltaic conversion efficiency of 0.45%.

  16. Electronic structure differences between H(2)-, Fe-, Co-, and Cu-phthalocyanine highly oriented thin films observed using NEXAFS spectroscopy.

    PubMed

    Willey, T M; Bagge-Hansen, M; Lee, J R I; Call, R; Landt, L; van Buuren, T; Colesniuc, C; Monton, C; Valmianski, I; Schuller, Ivan K

    2013-07-21

    Phthalocyanines, a class of macrocyclic, square planar molecules, are extensively studied as semiconductor materials for chemical sensors, dye-sensitized solar cells, and other applications. In this study, we use angular dependent near-edge x-ray absorption fine structure (NEXAFS) spectroscopy as a quantitative probe of the orientation and electronic structure of H2-, Fe-, Co-, and Cu-phthalocyanine molecular thin films. NEXAFS measurements at both the carbon and nitrogen K-edges reveal that phthalocyanine films deposited on sapphire have upright molecular orientations, while films up to 50 nm thick deposited on gold substrates contain prostrate molecules. Although great similarity is observed in the carbon and nitrogen K-edge NEXAFS spectra recorded for the films composed of prostrate molecules, the H2-phthalocyanine exhibits the cleanest angular dependence due to its purely out-of-plane π* resonances at the absorption onset. In contrast, organometallic-phthalocyanine nitrogen K-edges have a small in-plane resonance superimposed on this π* region that is due to a transition into molecular orbitals interacting with the 3dx(2)-y(2) empty state. NEXAFS spectra recorded at the metal L-edges for the prostrate films reveal dramatic variations in the angular dependence of specific resonances for the Cu-phthalocyanines compared with the Fe-, and Co-phthalocyanines. The Cu L3,2 edge exhibits a strong in-plane resonance, attributed to its b1g empty state with dx(2)-y(2) character at the Cu center. Conversely, the Fe- and Co- phthalocyanine L3,2 edges have strong out-of-plane resonances; these are attributed to transitions into not only b1g (dz(2)) but also eg states with dxz and dyz character at the metal center.

  17. Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

    NASA Astrophysics Data System (ADS)

    Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

    2016-08-01

    Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

  18. Deposition of ultra thin CuInS₂ absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C).

    PubMed

    Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

    2015-02-06

    Two new processes for the atomic layer deposition of copper indium sulfide (CuInS₂) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl₃) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS₂ stoechiometry was only achieved by depositing In₂S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)₂, In(acac)₃) allows the direct deposition of CuInS₂ at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

  19. TOPICAL REVIEW: Review of a chemical approach to YBa2Cu3O7-x-coated superconductors—metalorganic deposition using trifluoroacetates

    NASA Astrophysics Data System (ADS)

    Araki, Takeshi; Hirabayashi, Izumi

    2003-11-01

    Large-area, uniform, high critical current density (Jc) YBa2Cu3O7-x (YBCO) superconductor films are now routinely obtained by metalorganic deposition using trifluoroacetates (TFA-MOD). This method does not require any expensive vacuum apparatus at any time during the whole process. Thus, TFA-MOD is regarded as one of the most suitable candidates for fabricating a YBCO tape for many high-power applications. This method originated from an electron beam process using BaF2 developed by Mankiewich et al. Afterwards, Gupta et al reported using TFA-MOD to prepare a similar precursor film. These two ex situ processes used fluorides instead of BaCO3 to avoid the fatal deterioration in Jc, which is caused in the resulting films through metal carboxylic groups. Fluorides not only avoid such deterioration but also lead to perfectly c-axis-oriented epitaxial crystal growth. In conventional metalorganic deposition, nucleation in the precursor film causes random orientation in the resulting film. However, in TFA-MOD, nanocrystallites in the precursor film never cause such disorder. Furthermore, during the firing process of TFA-MOD, water and HF gas diffuse quickly between the film surface and growth front of the YBCO layer. This diffusion never limits the growth rate of YBCO. What distinguishes TFA-MOD from conventional metalorganic deposition? What happens during heat treatment? In this paper, we discuss all the TFA-MOD processes and the peculiar growth scheme of the YBCO layer in TFA-MOD using the model of a quasi-liquid network. In addition, we review the history of TFA-MOD and recent results and discuss the prospects of future applications.

  20. 10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets

    NASA Astrophysics Data System (ADS)

    Peng, Xiao; Zhao, Ming; Zhuang, Daming; Sun, Rujun; Zhang, Leng; Wei, Yaowei; Lv, Xunyan; Wu, Yixuan; Ren, Guoan

    2018-06-01

    We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%.

  1. Detection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-films

    NASA Astrophysics Data System (ADS)

    Schwarz, Torsten; Marques, Miguel A. L.; Botti, Silvana; Mousel, Marina; Redinger, Alex; Siebentritt, Susanne; Cojocaru-Mirédin, Oana; Raabe, Dierk; Choi, Pyuck-Pa

    2015-10-01

    Cu2ZnSnSe4 thin-films for photovoltaic applications are investigated using combined atom probe tomography and ab initio density functional theory. The atom probe studies reveal nano-sized grains of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 composition, which cannot be assigned to any known phase reported in the literature. Both phases are considered to be metastable, as density functional theory calculations yield positive energy differences with respect to the decomposition into Cu2ZnSnSe4 and ZnSe. Among the conceivable crystal structures for both phases, a distorted zinc-blende structure shows the lowest energy, which is a few tens of meV below the energy of a wurtzite structure. A band gap of 1.1 eV is calculated for both the Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases. Possible effects of these phases on solar cell performance are discussed.

  2. The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

    NASA Astrophysics Data System (ADS)

    Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

    2016-04-01

    Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

  3. Depth profile composition studies of thin film CdS:Cu2S solar cells using XPS and AES

    NASA Astrophysics Data System (ADS)

    Bhide, V. G.; Salkalachen, S.; Rastogi, A. C.; Rao, C. N. R.; Hegde, M. S.

    1981-09-01

    Studies of the surface composition and depth profiles of thin film CdS:Cu2S solar cells based on the techniques of X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are reported. Specimens were fabricated by the thermal deposition of polycrystalline CdS films onto silver-backed electrodes predeposited on window glass substrates, followed by texturization in hot HCl and chemical plating in a hot CuCl(I) bath for a few seconds to achieve the topotaxial growth of CuS films. The XPS and AES studies indicate the junction to be fairly diffused in the as-prepared cell, with heat treatment in air at 210 C sharpening the junction, improving the stoichiometry of the Cu2S layer and thus improving cell performance. The top copper sulfide layer is found to contain impurities such as Cd, Cl, O and C, which may be removed by mild Ar(+) ion beam etching. The presence of copper deep in the junction is invariably detected, apparently in the grain boundary region in the form of CuS or Cu(2+) trapped in the lattice. It is also noted that the nominal valence state of copper changes abruptly from Cu(+) to Cu(2+) across the junction.

  4. Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

    NASA Astrophysics Data System (ADS)

    Kim, Jekyung; Shin, Byungha

    2017-09-01

    Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

  5. The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

    PubMed

    Polat, B Deniz; Keles, Ozgul

    2015-12-01

    The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

  6. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    NASA Astrophysics Data System (ADS)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  7. Selective interlayer ferromagnetic coupling between the Cu spins in YBa2Cu3O7−x grown on top of La0.7Ca0.3MnO3

    PubMed Central

    Huang, S. W.; Wray, L. Andrew; Jeng, Horng-Tay; Tra, V. T.; Lee, J. M.; Langner, M. C.; Chen, J. M.; Roy, S.; Chu, Y. H.; Schoenlein, R. W.; Chuang, Y.-D.; Lin, J.-Y.

    2015-01-01

    Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa2Cu3O7−x (YBCO) superconductor when it is grown on top of ferromagnetic La0.7Ca0.3MnO3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO2 but not with La0.7Ca0.3O interfacial termination. Such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO2 plane at the La0.7Ca0.3O and MnO2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems. PMID:26573394

  8. A simple solution to the problem of effective utilisation of the target material for pulsed laser deposition of thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kuzanyan, A S; Kuzanyan, A A; Petrosyan, V A

    The factors determining the efficiency of the target material utilisation for pulsed laser deposition of films are considered. The target volume is calculated, which is evaporated in the ablation process by the focused laser radiation having a rectangular form. The new device is suggested and developed for obtaining thin films by the method of laser deposition, which is specific in the employment of a simple optical system mounted outside a deposition chamber that comprises two lenses and the diaphragm and focuses the laser beam onto a target in the form of a sector-like spot. Thin films of CuO and YBaCuOmore » were deposited with this device. Several deposition cycles revealed that the target material is consumed uniformly from the entire surface of the target. A maximal spread of the target thickness was not greater than ±2% both prior to deposition and after it. The device designed provides a high coefficient of the target material utilisation efficiency. (laser deposition of thin films)« less

  9. Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

    PubMed

    Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

    2018-07-01

    Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

  10. Preparation and substrate reactions of superconducting Y-Ba-Cu-O films

    NASA Astrophysics Data System (ADS)

    Gurvitch, M.; Fiory, A. T.

    1987-09-01

    Multiple metal-target dc magnetron sputter deposition of a metallic YBa2Cu3 alloy in pure Ar followed by ex situ oxygen annealing was used to prepare superconducting films on various substrates. This work particularly examines film-substrate reactions which are degrading to superconductivity. Better superconductors were obtained using predeposited buffer layers, notably on cubic zirconia and MgO substrates covered with Ag and Nb. Best films have Tc = 80 K, metallic resistivities with a resistance ratio of about 2, and a critical current density of greater than about 10 kA/sq cm at 4.2 K.

  11. Thin film seeds for melt processing textured superconductors for practical applications

    DOEpatents

    Veal, Boyd W.; Paulikas, Arvydas; Balachandran, Uthamalingam; Zhong, Wei

    1999-01-01

    A method of fabricating bulk superconducting material such as RBa.sub.2 Cu.sub.3 O.sub.7-.delta. where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate. The powder oxides of RBa.sub.2 Cu.sub.3 O.sub.7-.delta. or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta., where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 .ANG. and 2000 .ANG.. A construction prepared by the method is also disclosed.

  12. Thin film seeds for melt processing textured superconductors for practical applications

    DOEpatents

    Veal, B.W.; Paulikas, A.; Balachandran, U.; Zhong, W.

    1999-02-09

    A method of fabricating bulk superconducting material such as RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} where R is La or Y comprising depositing a thin epitaxially oriented film of Nd or Sm (123) on an oxide substrate is disclosed. The powder oxides of RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} or oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}, where R is Y or La are heated, in physical contact with the thin film of Nd or Sm (123) on the oxide substrate to a temperature sufficient to form a liquid phase in the oxide or carbonate mixture while maintaining the thin film solid to grow a large single domain 123 superconducting material. Then the material is cooled. The thin film is between 200 {angstrom} and 2000 {angstrom}. A construction prepared by the method is also disclosed.

  13. Optimization of the deposition conditions and structural characterization of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chrzanowski, J.; Meng-Burany, S.; Xing, W.B.

    1994-12-31

    Two series of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub z} thin films deposited on (001) LaAlO{sub 3} single crystals by excimer laser ablation under two different protocols have been investigated. The research has yielded well defined deposition conditions in terms of oxygen partial pressure p(O{sub 2}) and substrate temperature of the deposition process T{sub h}, for the growth of high quality epitaxial films of YBCO. The films grown under conditions close to optimal for both j{sub c} and T{sub c} exhibited T{sub c}{ge}91 K and j{sub c}{ge}4 x 10{sup 6} A/cm{sup 2}, at 77 K. Close correlations between the structural quality ofmore » the film, the growth parameters (p(O{sub 2}), T{sub h}) and j{sub c} and T{sub c} have been found.« less

  14. Evidence for Cu2-xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Simsek Sanli, E.; Ramasse, Q. M.; Mainz, R.; Weber, A.; Abou-Ras, D.; Sigle, W.; van Aken, P. A.

    2017-07-01

    Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2-xSe (x = 0-0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2-xSe precipitates with spatial extensions on the order of 10-100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2-xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu-Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu-Se-assisted CIGS thin-film formation under Cu-rich conditions.

  15. Chemical bath deposited and dip coating deposited CuS thin films - Structure, Raman spectroscopy and surface study

    NASA Astrophysics Data System (ADS)

    Tailor, Jiten P.; Khimani, Ankurkumar J.; Chaki, Sunil H.

    2018-05-01

    The crystal structure, Raman spectroscopy and surface microtopography study on as-deposited CuS thin films were carried out. Thin films deposited by two techniques of solution growth were studied. The thin films used in the present study were deposited by chemical bath deposition (CBD) and dip coating deposition techniques. The X-ray diffraction (XRD) analysis of both the as-deposited thin films showed that both the films possess covellite phase of CuS and hexagonal unit cell structure. The determined lattice parameters of both the films are in agreement with the standard JCPDS as well as reported data. The crystallite size determined by Scherrer's equation and Hall-Williamsons relation using XRD data for both the as-deposited thin films showed that the respective values were in agreement with each other. The ambient Raman spectroscopy of both the as-deposited thin films showed major emission peaks at 474 cm-1 and a minor emmision peaks at 265 cm-1. The observed Raman peaks matched with the covellite phase of CuS. The atomic force microscopy of both the as-deposited thin films surfaces showed dip coating thin film to be less rough compared to CBD deposited thin film. All the obtained results are presented and deliberated in details.

  16. Room temperature electrical properties of solution derived p-type Cu{sub 2}ZnSnS{sub 4} thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gupta, Goutam Kumar; Dixit, Ambesh, E-mail: ambesh@iitj.ac.in

    2016-05-06

    Electrical properties of solution processed Cu{sub 2}ZnSnS{sub 4} (CZTS) compound semiconductor thin film structures on molybdenum (Mo) coated glass substrates are investigated using Mott-Schottky and Impedance spectroscopy measurements at room temperature. These measurements are carried out in sodium sulfate (Na{sub 2}SO{sub 4}) electrolytic medium at pH ~ 9.5. The inversion/depletion/accumulation regions are clearly observed in CZTS semiconductor −Na{sub 2}SO{sub 4} electrolyte interface and measured flat band potential is ~ −0.27 V for CZTS thin film electrode. The positive slope of the depletion region confirms the intrinsic p-type characteristics of CZTS thinfilms with ~ 2.5× 10{sup 19} holes/m{sup 3}. The high frequencymore » impedance measurements showed ~ 30 Ohm electrolyte resistance for the investigated configuration.« less

  17. Pinning, thermally activated depinning and their importance for tuning the nanoprecipitate size and density in high J c YBa 2Cu 3O 7-x films

    NASA Astrophysics Data System (ADS)

    Chen, Zhijun; Kametani, Fumitake; Gurevich, Alex; Larbalestier, David

    2009-12-01

    YBa 2Cu 3O 7-x (Y123) films with quantitatively controlled artificial nanoprecipitate pinning centers were grown by pulsed laser deposition (PLD) and characterized by transport over wide temperature ( T) and magnetic field ( H) ranges and by transmission electron microscopy (TEM). The critical current density J c was found to be determined by the interplay of strong vortex pinning and thermally activated depinning (TAD), which together produced a non-monotonic dependence of J c on c-axis pin spacing d c. At low T and H, J c increased with decreasing d c, reaching the very high J c ∼ 48 MA/cm 2 ∼20% of the depairing current density J d at 10 K, self-field and d c ∼ 10 nm, but at higher T and H when TAD effects become significant, J c was optimized at larger d c because longer vortex segments confined between nanoprecipitates are less prone to thermal fluctuations. We conclude that precipitates should extend at least several coherence lengths along vortices in order to produce irreversibility fields H irr(77 K) greater than 7 T and maximum bulk pinning forces F p,max(77 K) greater than 7-8 GN/m 3 (values appropriate for H parallel to the c-axis). Our results show that there is no universal pin array that optimizes J c at all T and H.

  18. Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin films

    NASA Astrophysics Data System (ADS)

    Colombara, Diego; Peter, Laurence M.; Rogers, Keith D.; Hutchings, Kyle

    2012-02-01

    CuSbS2 and Cu3BiS3 are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new “Time-Temperature-Reaction” (TTR) diagram and modified Pilling-Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS2 to appear is substantially lower than for Cu3BiS3, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation.

  19. SILAR deposited Bi2S3 thin film towards electrochemical supercapacitor

    NASA Astrophysics Data System (ADS)

    Raut, Shrikant S.; Dhobale, Jyotsna A.; Sankapal, Babasaheb R.

    2017-03-01

    Bi2S3 thin film electrode has been synthesized by simple and low cost successive ionic layer adsorption and reaction (SILAR) method on stainless steel (SS) substrate at room temperature. The formation of interconnected nanoparticles with nanoporous surface morphology has been achieved and which is favourable to the supercapacitor applications. Electrochemical supercapacitive performance of Bi2S3 thin film electrode has been performed through cyclic voltammetry, charge-discharge and stability studies in aqueous Na2SO4 electrolyte. The Bi2S3 thin film electrode exhibits the specific capacitance of 289 Fg-1 at 5 mVs-1 scan rate in 1 M Na2SO4 electrolyte.

  20. Electrical properties of Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications

    NASA Astrophysics Data System (ADS)

    Xian, Cheng-Ji; Park, Jong-Hyun; Ahn, Kyung-Chan; Yoon, Soon-Gil; Lee, Jeong-Won; Kim, Woon-Chun; Lim, Sung-Taek; Sohn, Seung-Hyun; Moon, Jin-Seok; Jung, Hyung-Mi; Lee, Seung-Eun; Lee, In-Hyung; Chung, Yul-Kyo; Jeon, Min-Ku; Woo, Seong-Ihl

    2007-01-01

    200-nm-thick BMN films were deposited on Pt /TiO2/SiO2/Si and Cu /Ti/SiO2/Si substrates at various temperatures by pulsed laser deposition. The dielectric constant and capacitance density of the films deposited on Pt and Cu electrodes show similar tendency with increasing deposition temperature. On the other hand, dielectric loss of the films deposited on Cu electrode varies from 0.7% to 1.3%, while dielectric loss of films on Pt constantly shows 0.2% even though the deposition temperature increases. The low value of breakdown strength in BMN films on Pt compared to films deposited on Cu electrode was attributed to the increase of surface roughness by the formation of secondary phases at interface between BMN films and Pt electrodes.

  1. Grain Growth in Cu2ZnSnS4 Thin Films Using Sn Vapor Transport for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Toyama, Toshihiko; Konishi, Takafumi; Seo, Yuichi; Tsuji, Ryotaro; Terai, Kengo; Nakashima, Yuto; Okamoto, Hiroaki; Tsutsumi, Yasuo

    2013-07-01

    Cu2ZnSnS4 thin films containing grains grown using Sn vapor transport (TVT) were investigated. Structural characterization revealed that the grain sizes were equal to or larger than the film thickness (1-4 µm) and significantly larger than those in the case of growth without TVT (60 nm). Furthermore, no phase separation was detected. Photothermal diffraction spectroscopy revealed that the optical absorption coefficient was very low in the subgap region, 7×101 cm-1, suggesting the suppression of defect formation. Finally, a TVT-processed thin film was used as an absorber in a solar cell, and a conversion efficiency of 6.9% was achieved.

  2. One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

    NASA Astrophysics Data System (ADS)

    Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

    2017-04-01

    Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

  3. X-ray absorption spectroscopy study of annealing process on Sr1-xLaxCuO2 electron-doped cuprate thin films

    NASA Astrophysics Data System (ADS)

    Galdi, A.; Orgiani, P.; Sacco, C.; Gobaut, B.; Torelli, P.; Aruta, C.; Brookes, N. B.; Minola, M.; Harter, J. W.; Shen, K. M.; Schlom, D. G.; Maritato, L.

    2018-03-01

    The superconducting properties of Sr1-xLaxCuO2 thin films are strongly affected by sample preparation procedures, including the annealing step, which are not always well controlled. We have studied the evolution of Cu L2,3 and O K edge x-ray absorption spectra (XAS) of Sr1-xLaxCuO2 thin films as a function of reducing annealing, both qualitatively and quantitatively. By using linearly polarized radiation, we are able to identify the signatures of the presence of apical oxygen in the as-grown sample and its gradual removal as a function of duration of 350 °C Ar annealing performed on the same sample. Even though the as-grown sample appears to be hole doped, we cannot identify the signature of the Zhang-Rice singlet in the O K XAS, and it is extremely unlikely that the interstitial excess oxygen can give rise to a superconducting or even a metallic ground state. XAS and x-ray linear dichroism analyses are, therefore, shown to be valuable tools to improving the control over the annealing process of electron doped superconductors.

  4. Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

    2018-01-01

    This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

  5. Low temperature internal friction spectrum of YBa 2Cu 3O x

    NASA Astrophysics Data System (ADS)

    Mi, Y.; Schaller, R.; Berger, H.; Benoit, W.; Sathish, S.

    1991-01-01

    The elastic and anelastic behaviours of polycrystalline YBa 2Cu 3O x specimens have been studied between 80 and 300 K, by means of a resonant bar technique. Three damping peaks have been observed at 90, 115 and 220 K. The stability of these peaks during annealing in vacuum has been carefully examined. The 90 K peak is not related to the superconducting transition because it is still observed after thermal treatments leading to the disappearance of superconductivity. The 115 K is due to a relaxation mechanism. The activation energy is ∼0.17 eV and the frequency factor is ∼10 12s -1. Also this peak is certainly correlated with the excess oxygen atoms, because it disappears with annealing in vacuum. The 220 K maximum, which was also observed by ultrasonic measurements, seems to be affected by the sample preparation, i.e. by the sintering conditions. Finally, a frequency hysteresis has been observed in every superconducting sample, which accounts for an anomalous behaviour of the elastic modulus.

  6. Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Cowen, Jonathan E.; Hepp, Aloysius F.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

  7. Phase transition in lead titanate thin films: a Brillouin study

    NASA Astrophysics Data System (ADS)

    Kuzel, P.; Dugautier, C.; Moch, P.; LeMarrec, F.; Karkut, M. G.

    2002-12-01

    The elastic properties of both polycrystalline and epitaxial PbTiO3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa2Cu3O7. The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, TC is higher in the sol-gel films, while in the epitaxial films the sign of the TC shift depends on the underlying material.

  8. Selective interlayer ferromagnetic coupling between the Cu spins in YBa 2Cu 3O 7–x grown on top of La 0.7Ca 0.3MnO 3

    DOE PAGES

    Huang, S. W.; Wray, L. Andrew; Jeng, Horng -Tay; ...

    2015-11-17

    Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa 2Cu 3O 7–x (YBCO) superconductor when it is grown on top of ferromagnetic La 0.7Ca 0.3MnO 3 (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such that it is only observed in bilayers with MnO 2 but not withmore » La 0.7Ca 0.3O interfacial termination. Thus, such contrasting behaviors, we propose, are due to distinct energetic of CuO chain and CuO 2 plane at the La 0.7Ca 0.3O and MnO 2 terminated interfaces respectively, therefore influencing the transfer of spin-polarized electrons from manganite to cuprate differently. Our findings suggest that the superconducting/ferromagnetic bilayers with proper interfacial engineering can be good candidates for searching the theorized Fulde-Ferrel-Larkin-Ovchinnikov (FFLO) state in cuprates and studying the competing quantum orders in highly correlated electron systems.« less

  9. Distinct charge orders in the planes and chains of ortho-III-ordered YBa2Cu3O(6+δ) superconductors identified by resonant elastic x-ray scattering.

    PubMed

    Achkar, A J; Sutarto, R; Mao, X; He, F; Frano, A; Blanco-Canosa, S; Le Tacon, M; Ghiringhelli, G; Braicovich, L; Minola, M; Sala, M Moretti; Mazzoli, C; Liang, Ruixing; Bonn, D A; Hardy, W N; Keimer, B; Sawatzky, G A; Hawthorn, D G

    2012-10-19

    Recently, charge density wave (CDW) order in the CuO(2) planes of underdoped YBa(2)Cu(3)O(6+δ) was detected using resonant soft x-ray scattering. An important question remains: is the chain layer responsible for this charge ordering? Here, we explore the energy and polarization dependence of the resonant scattering intensity in a detwinned sample of YBa(2)Cu(3)O(6.75) with ortho-III oxygen ordering in the chain layer. We show that the ortho-III CDW order in the chains is distinct from the CDW order in the planes. The ortho-III structure gives rise to a commensurate superlattice reflection at Q=[0.33 0 L] whose energy and polarization dependence agrees with expectations for oxygen ordering and a spatial modulation of the Cu valence in the chains. Incommensurate peaks at [0.30 0 L] and [0 0.30 L] from the CDW order in the planes are shown to be distinct in Q as well as their temperature, energy, and polarization dependence, and are thus unrelated to the structure of the chain layer. Moreover, the energy dependence of the CDW order in the planes is shown to result from a spatial modulation of energies of the Cu 2p to 3d(x(2)-y(2)) transition, similar to stripe-ordered 214 cuprates.

  10. High T c superconductivity in YBa2Cu3O7- x studied by PAC and PAS

    NASA Astrophysics Data System (ADS)

    Zhu, Shengyun; Li, Anli; Zheng, Shengnan; Huang, Hanchen; Li, Donghong; Din, Honglin; Du, Hongshan; Sun, Hancheng

    1993-03-01

    High T c superconductivity has been investigated in YBaCuO by both perturbed angular correlation and positron annihilation spectroscopy techniques as a function of temperature from 77 to 300 K. An abrupt change has been observed in the positron lifetime and Doppler broadening and the electric field gradient and its asymmetry parameter across T c, indicating a transition of two- to one-dimensional Cu-O-Cu chain structure and a charge transfer from CuO layers to CuO chains. An anomaly of the normal state has been demonstrated around 125 K, which is attributed to the structural instability.

  11. Growth and optoelectronic characteristic of n-Si/p-CuIn(S 1-xSe x) 2 thin-film solar cell by solution growth technique

    NASA Astrophysics Data System (ADS)

    Chavhan, S.; Sharma, R.

    2006-07-01

    The p-CuIn(S 1-xSe x) 2 (CISS) thin films have been grown on n-Si substrate by solution growth technique. The deposition parameters, such as pH (10.5), deposition time (60 min), deposition temperature (50 °C), and concentration of bath solution (0.1 M) were optimized. Elemental analysis of the p-CuIn(S 1-xSe x) 2 thin film was confirmed by energy-dispersive analysis of X-ray (EDAX). The SEM study of absorber layer shows the uniform morphology of film as well as the continuous smooth deposition onto the n-Si substrates, whose grain size is 130 nm. CuIn(S 1-xSe x) 2 ( x=0.5) reveals (1 1 2) orientation peak and exhibits the chalcopyrite structure with lattice constant a=5.28 Å and c=11.45 Å. The J- V characteristics were measured in dark and light. The device parameters have been calculated for solar cell fabrication, V=411.09 mV, and J=14.55 mA. FF=46.55% and η=4.64% under an illumination of 60 mW/cm 2. The J- V characteristics of the device under dark condition were also studied and the ideality factor was calculated, which is equal to 2.2 for n-Si/p-CuIn(S 0.5Se 0.5) 2 heterojunction thin film.

  12. Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A.; Romanofsky, Robert R.; VanKeuls, Frederick W.; Mueller, Carl H.; Treece, Randolph E.; Rivkin, Tania V.

    1997-01-01

    High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and

  13. Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

    PubMed Central

    Yeh, Min-Yen; Lei, Po-Hsun; Lin, Shao-Hsein; Yang, Chyi-Da

    2016-01-01

    Cu2ZnSnS4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl2), zinc chloride (ZnCl2), tin chloride (SnCl2), and thiourea (SC(NH2)2), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with Voc = 520 mV, Jsc = 3.28 mA/cm2, and fill-factor (FF) = 66%. PMID:28773647

  14. Microwave heating of a high-Tc YBa2Cu3O6.9 superconductor through a Josephson-junction system

    NASA Astrophysics Data System (ADS)

    Stankowski, J.; Czyak, B.; Martinek, J.

    1990-12-01

    An overheating of a Josephson-junction system (JJS) in ceramic YBa2Cu3O6.9 samples was induced by microwave irradiation in a microwave cavity. The amplitude of the Josephson microwave absorption (JMA) was used as a monitor of the local JJS temperature. The difference between the JJS temperature and a sample temperature depends linearly on the power of the microwave field. A thermal hysteresis of Tc for heating and cooling is proportional to the microwave power applied in the JMA experiment.

  15. An aging effect and its origin in GdBCO thin films

    NASA Astrophysics Data System (ADS)

    Schlesier, K.; Huhtinen, H.; Granroth, S.; Paturi, P.

    2010-06-01

    An aging effect investigation was made for GdBa2Cu3O7 (GdBCO) thin films grown on SrTiO3 (001) substrates with pulsed laser deposition (PLD) method from nanograined targets. The films were cut into two pieces where one piece was coated with gold cap layer while the other was left without coating. Both pieces were kept in ambient air during the half year measurement period. Magnetization measurements as well as phase purity, lattice parameter, oxygen effect and depth structure determination with x-ray diffraction (XRD) were made in one month interval. For structure and oxygen content, x-ray photoelectron spectroscopy measurements (XPS) were done in the beginning and in the end of the period. A reduction of the critical temperature and the critical current density, Jc, was found in the gold coated GdBCO film in ambient air in course of time. A smaller decrease of Jc was detected in uncoated GdBCO. No development of impurity phase, increase of a-orientation or reduction of the pinning structure was detected in uncoated GdBCO. However, a small development of impurity phase was found in gold coated GdBCO. The diminution of Tc and Jc is concluded to originate from oxygen release. No such a phenomenon was found in YBa2Cu3O7. We conclude that gold is not a proper cap layer at least for some applications.

  16. Dilute electrodeposition of TiO2 and ZnO thin film memristors on Cu substrate

    NASA Astrophysics Data System (ADS)

    Fauzi, F. B.; Ani, M. H.; Herman, S. H.; Mohamed, M. A.

    2018-03-01

    Memristor has become one of the alternatives to replace the current memory technologies. Fabrication of titanium dioxide, TiO2 memristor has been extensively studied by using various deposition methods. However, recently more researches have been done to explore the compatibility of other transition metal oxide, TMO such as zinc oxide, ZnO to be used as the active layer of the memristor. This paper highlights the simple and easy-control electrodeposition to deposit titanium, Ti and zinc, Zn thin film at room temperature and subsequent thermal oxidation at 600 °C. Gold, Au was then sputtered as top electrode to create metal-insulator-metal, MIM sandwich of Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors. The structural, morphological and memristive properties were characterized using Field Emission Scanning Electron Microscopy, FESEM, X-Ray Diffraction, XRD and current-voltage, I-V measurement. Both Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristivity were identified by the pinched hysteresis loop with resistive ratio of 1.2 and 1.08 respectively. Empirical study on diffusivity of Ti4+, Zn2+ and O2‑ ions in both metal oxides show that the metal vacancies were formed, thus giving rise to its memristivity. The electrodeposited Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors demonstrate comparable performances to previous studies using other methods.

  17. Direct Correlations of Grain Boundary Potentials to Chemical States and Dielectric Properties of Doped CaCu3Ti4O12 Thin Films.

    PubMed

    Cho, Ahra; Han, Chan Su; Kang, Meenjoo; Choi, Wooseok; Lee, Jihwan; Jeon, Jaecheol; Yu, Sujae; Jung, Ye Seul; Cho, Yong Soo

    2018-05-09

    Colossal dielectric constant CaCu 3 Ti 4 O 12 has been recognized as one of the rare materials having intrinsic interfacial polarization and thus unusual dielectric characteristics, in which the electrical state of the grain boundary is critical. Here, the direct correlation between the grain boundary potential and relative permittivity is proposed for the CaCu 3 Ti 4 O 12 thin films doped with Zn, Ga, Mn, and Ag as characterized by Kelvin probe force microscopy. The dopants are intended to provide the examples of variable grain boundary potentials that are driven by chemical states including Cu + , Ti 3+ , and oxygen vacancy. Grain boundary potential is nearly linearly proportional to the dielectric constant. This effect is attributed to the increased charge accumulation near the grain boundary, depending on the choice of the dopant. As an example, 1 mol % Ag-doped CaCu 3 Ti 4 O 12 thin films demonstrate the best relative permittivity as associated with a higher grain boundary potential of 120.3 mV compared with 82.6 mV for the reference film. The chemical states across grain boundaries were further verified by using spherical aberration-corrected scanning transmission electron microscopy with the simultaneous electron energy loss spectroscopy.

  18. Study of Sb2S3 thin films deposited by SILAR method

    NASA Astrophysics Data System (ADS)

    Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

    2018-05-01

    In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

  19. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    NASA Astrophysics Data System (ADS)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  20. Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kavalakkatt, J.; Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Nichterwitz, M.

    2014-01-07

    The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minimamore » with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.« less

  1. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lehmann, Jascha; Potsdam Institute for Climate Impact Research; Lehmann, Sebastian, E-mail: sebastian.lehmann@ftf.lth.se

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfacesmore » of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.« less

  2. Facile fabrication of a well-ordered porous Cu-doped SnO2 thin film for H2S sensing.

    PubMed

    Zhang, Shumin; Zhang, Pingping; Wang, Yun; Ma, Yanyun; Zhong, Jun; Sun, Xuhui

    2014-09-10

    Well-ordered Cu-doped and undoped SnO2 porous thin films with large specific surface areas have been fabricated on a desired substrate using a self-assembled soft template combined with simple physical cosputtering deposition. The Cu-doped SnO2 porous film gas sensor shows a significant enhancement in its sensing performance, including a high sensitivity, selectivity, and a fast response and recovery time. The sensitivity of the Cu-doped SnO2 porous sensor is 1 order of magnitude higher than that of the undoped SnO2 sensor, with average response and recovery times to 100 ppm of H2S of ∼ 10.1 and ∼ 42.4 s, respectively, at the optimal operating temperature of 180 °C. The well-defined porous sensors fabricated by the method also exhibit high reproducibility because of the accurately controlled fabrication process. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors with easy doping and multilayer porous nanostructure for practical sensing applications.

  3. Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

    NASA Astrophysics Data System (ADS)

    Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

    2017-08-01

    Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

  4. Influences of film thickness on the structural, electrical and optical properties of CuAlO2 thin films

    NASA Astrophysics Data System (ADS)

    Dong, Guobo; Zhang, Ming; Wang, Mei; Li, Yingzi; Gao, Fangyuan; Yan, Hui; Diao, Xungang

    2014-07-01

    CuAlO2 films with different thickness were prepared by the radio frequency magnetron sputtering technique. The structural, electrical and optical properties of CuAlO2 were studied by X-ray diffraction, atomic force microscope, UV-Vis double-beam spectrophotometer and Hall measurements. The results indicate that the single phase hexagonal CuAlO2 is formed and the average grain size of CuAlO2 films increases with increasing film thickness. The results also exhibit that the lowering of bandgap and the increase of electrical conductivity of CuAlO2 films with the increase of their thickness, which are attributed to the improvement of the grain size and the anisotropic electrical property. According to the electrical and optical properties, the biggest figure of merit is achieved for the CuAlO2 film with the appropriate thickness of 165 nm.

  5. Influence of support electrolytic in the electrodeposition of CuGaSe thin films

    DOE PAGES

    Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.; ...

    2016-11-02

    CuGaSe 2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Because of its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions mustmore » be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. Here, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe 2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. Finally, we present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.« less

  6. Influence of support electrolytic in the electrodeposition of CuGaSe thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.

    CuGaSe 2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Because of its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions mustmore » be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. Here, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe 2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. Finally, we present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.« less

  7. Mechanisms of weak thickness dependence of the critical current density in strong-pinning ex situ metal organic-deposition-route YBa2Cu3O7-x coated conductors

    NASA Astrophysics Data System (ADS)

    Kim, S. I.; Gurevich, A.; Song, X.; Li, X.; Zhang, W.; Kodenkandath, T.; Rupich, M. W.; Holesinger, T. G.; Larbalestier, D. C.

    2006-09-01

    We report on the thickness dependence of the superconducting characteristics including critical current Ic, critical current density Jc, transition temperature Tc, irreversibility field Hirr, bulk pinning force plot Fp(H), and normal state resistivity curve ρ(T) measured after successive ion milling of ~1 µm thick high-Ic YBa2Cu3O7-x films made by an ex situ metal-organic deposition process on Ni-W rolling-assisted biaxially textured substrates (RABiTSTM). In contrast to many recent data, mostly on in situ pulsed laser deposition (PLD) films, which show strong depression of Jc with increasing film thickness t, our films exhibit only a weak dependence of Jc on t. The two better textured samples had full cross-section average Jc,avg (77 K, 0 T) ~4 MA cm-2 near the buffer layer interface and ~3 MA cm-2 at full thickness, despite significant current blocking due to ~30% porosity in the film. Taking account of the thickness dependence of the porosity, we estimate that the local, vortex-pinning current density is essentially independent of thickness, while accounting for the additional current-blocking effects of grain boundaries leads to local, vortex-pinning Jc values well above 5 MA cm-2. Such high local Jc values are produced by strong three-dimensional vortex pinning which subdivides vortex lines into weakly coupled segments much shorter than the film thickness.

  8. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  9. Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells.

    PubMed

    Siol, Sebastian; Dhakal, Tara P; Gudavalli, Ganesh S; Rajbhandari, Pravakar P; DeHart, Clay; Baranowski, Lauryn L; Zakutayev, Andriy

    2016-06-08

    High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

  10. Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa2Cu3O7-δ single crystals

    NASA Astrophysics Data System (ADS)

    Khadzhai, G. Ya.; Vovk, R. V.; Vovk, N. R.; Kamchatnaya, S. N.; Dobrovolskiy, O. V.

    2018-02-01

    We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of optimally doped YBa2Cu3O7-δ single crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation conductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

  11. The microscopic structure of charge density waves in underdoped YBa2Cu3O6.54 revealed by X-ray diffraction

    NASA Astrophysics Data System (ADS)

    Forgan, E. M.; Blackburn, E.; Holmes, A. T.; Briffa, A. K. R.; Chang, J.; Bouchenoire, L.; Brown, S. D.; Liang, Ruixing; Bonn, D.; Hardy, W. N.; Christensen, N. B.; Zimmermann, M. V.; Hücker, M.; Hayden, S. M.

    2015-12-01

    Charge density wave (CDW) order appears throughout the underdoped high-temperature cuprate superconductors, but the underlying symmetry breaking and the origin of the CDW remain unclear. We use X-ray diffraction to determine the microscopic structure of the CDWs in an archetypical cuprate YBa2Cu3O6.54 at its superconducting transition temperature ~60 K. We find that the CDWs in this material break the mirror symmetry of the CuO2 bilayers. The ionic displacements in the CDWs have two components, which are perpendicular and parallel to the CuO2 planes, and are out of phase with each other. The planar oxygen atoms have the largest displacements, perpendicular to the CuO2 planes. Our results allow many electronic properties of the underdoped cuprates to be understood. For instance, the CDWs will lead to local variations in the electronic structure, giving an explicit explanation of density-wave states with broken symmetry observed in scanning tunnelling microscopy and soft X-ray measurements.

  12. Electronic structures of the YBa2Cu3O7-x surface and its modification by sputtering and adatoms of Ti and Cu

    NASA Astrophysics Data System (ADS)

    Meyer, H. M., III; Hill, D. M.; Wagener, T. J.; Gao, Y.; Weaver, J. H.; Capone, D. W., II; Goretta, K. C.

    1988-10-01

    We present x-ray and inverse photoemission results for fractured surfaces of YBa2Cu3O6.9 before and after surface modification by Ar ion bombardment and the deposition of adatoms of Ti and Cu. Representative results are compared for samples prepared in three different ways. Two of the sample types exhibit substantial emission from grain-boundary phases because of both intergranular and transgranular fracture; they produce results that are very similar to those presented thus far in the literature. A third type was nearly free of contamination and clearly showed spectral features characteristic of the superconductor. Comparison of these nearly contamination-free valence-band results to those for clean La1.85Sr0.15CuO4 shows remarkably similar x-ray photoemission spectroscopy densities of states, with subtle differences near the Fermi level and at 3 eV. Inverse photoemission results show the top of the Cu-O hybrid orbitals to be 2 eV above EF and the empty states of Y and Ba at higher energy. Comparison with one-electron densities of states shows reasonable agreement, but there are large differences within the set of calculated results, and it is unclear from the valence bands alone how to account for final-state Cu d-d Coulomb correlation effects (satellite features show these effects very clearly). Argon sputtering for both types of samples shows destruction of the superconductor, with differences that can be related to sample surface quality. The deposition of adatoms of Ti and Cu results in reaction associated with oxygen withdrawal from the near-surface region. Studies of the Cu 2p3/2 line shape show that the deposition of as little as ~1 monolayer equivalent of Ti or Cu reduces the formal Cu2+ emission within the probed volume (30-50 Å deep). Core-level analysis shows that this chemical reduction of Cu is accompanied by crystal-structure modifications as well. Studies of Cu adatom interactions reveal the progression from Cu2+ to Cu1+ and ultimately, to Cu

  13. Photo-oxidation-modulated refractive index in Bi2Te3 thin films

    NASA Astrophysics Data System (ADS)

    Yue, Zengji; Chen, Qinjun; Sahu, Amit; Wang, Xiaolin; Gu, Min

    2017-12-01

    We report on an 800 nm femtosecond laser beam induced giant refractive index modulation and enhancement of near-infrared transparency in topological insulator material Bi2Te3 thin films. An ultrahigh refractive index of up to 5.9 was observed in the Bi2Te3 thin film in near-infrared frequency. The refractive index dramatically decreases by a factor of ~3 by an exposure to the 800 nm femtosecond laser beam. Simultaneously, the transmittance of the Bi2Te3 thin films markedly increases to ~96% in the near-infrared frequency. The Raman spectra provides strong evidences that the observed both refractive index modulation and transparency enhancement result from laser beam induced photooxidation effects in the Bi2Te3 thin films. The Bi2Te3 compound transfers into Bi2O3 and TeO2 under the laser beam illumination. These experimental results pave the way towards the design of various optical devices, such as near-infrared flat lenses, waveguide and holograms, based on topological insulator materials.

  14. Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

    NASA Astrophysics Data System (ADS)

    Jose, Edwin; Kumar, M. C. Santhosh

    2016-09-01

    We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

  15. Thermal characterization of TiCxOy thin films

    NASA Astrophysics Data System (ADS)

    Fernandes, A. C.; Vaz, F.; Gören, A.; Junge, K. H.; Gibkes, J.; Bein, B. K.; Macedo, F.

    2008-01-01

    Thermal wave characterization of thin films used in industrial applications can be a useful tool, not just to get information on the films' thermal properties, but to get information on structural-physical parameters, e.g. crystalline structure and surface roughness, and on the film deposition conditions, since the thermal film properties are directly related to the structural-physical parameters and to the deposition conditions. Different sets of TiCXOY thin films, deposited by reactive magnetron sputtering on steel, have been prepared, changing only one deposition parameter at a time. Here, the effect of the oxygen flow on the thermal film properties is studied. The thermal waves have been measured by modulated IR radiometry, and the phase lag data have been interpreted using an Extremum method by which the thermal coating parameters are directly related to the values and modulation frequencies of the relative extrema of the inverse calibrated thermal wave phases. Structural/morphological characterization has been done using X-ray diffraction (XRD) and atomic force microscopy (AFM). The characterization of the films also includes thickness, hardness, and electric resistivity measurements. The results obtained so far indicate strong correlations between the thermal diffusivity and conductivity, on the one hand, and the oxygen flow on the other hand.

  16. Formation of [Cu 2 O 2 ] 2+ and [Cu 2 O] 2+ toward C–H Bond Activation in Cu-SSZ-13 and Cu-SSZ-39

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ipek, Bahar; Wulfers, Matthew J.; Kim, Hacksung

    Cu-exchanged small-pore zeolites (CHA and AEI) form methanol from methane (>95% selectivity) using a 3-step cyclic procedure (Wulfers et al. Chem. Commun. 2015, 51, 4447-4450) with methanol amounts higher than Cu-ZSM-5 and Cu-mordenite on a per gram and per Cu basis. Here, the CuxOy species formed on Cu-SSZ-13 and Cu-SSZ-39 following O2 or He activation at 450 °C are identified as trans-μ-1,2-peroxo dicopper(II) ([Cu2O2]2+) and mono-(μ-oxo) dicopper(II) ([Cu2O]2+) using synchrotron X-ray diffraction, in situ UV–vis, and Raman spectroscopy and theory. [Cu2O2]2+ and [Cu2O]2+ formed on Cu-SSZ-13 showed ligand-to-metal charge transfer (LMCT) energies between 22,200 and 35,000 cm–1, Cu–O vibrations atmore » 360, 510, 580, and 617 cm–1 and an O–O vibration at 837 cm–1. The vibrations at 360, 510, 580, and 837 cm–1 are assigned to the trans-μ-1,2-peroxo dicopper(II) species, whereas the Cu–O vibration at 617 cm–1 (Δ18O = 24 cm–1) is assigned to a stretching vibration of a thermodynamically favored mono-(μ-oxo) dicopper(II) with a Cu–O–Cu angle of 95°. On the basis of the intensity loss of the broad LMCT band between 22,200 and 35,000 cm–1 and Raman intensity loss at 571 cm–1 upon reaction, both the trans-μ-1,2-peroxo dicopper(II) and mono-(μ-oxo) dicopper(II) species are suggested to take part in methane activation at 200 °C with the trans-μ-1,2-peroxo dicopper(II) core playing a dominant role. A relationship between the [Cu2Oy]2+ concentration and Cu(II) at the eight-membered ring is observed and related to the concentration of [CuOH]+ suggested as an intermediate in [Cu2Oy]2+ formation.« less

  17. Investigation of noble metal substrates and buffer layers for BiSrCaCuO thin films

    NASA Astrophysics Data System (ADS)

    Matthiesen, M. M.; Rubin, L. M.; Williams, K. E.; Rudman, D. A.

    Noble metal buffer layers and substrates for Bi2Sr2CaCu2O8 (BSCCO) films were investigated using bulk ceramic processing and thin-film techniques. Highly oriented, superconducting BSCCO films were fabricated on polycrystalline Ag substrates and on Ag/MgO and Ag/YSZ structures. Such films could not be produced on Au or Pt substrates under any annealing conditions. In addition, superconducting BSCCO films could not be produced on Ag/Al2O3, Ag/SiO2/Si, or Ag/(Haynes 230 alloy) structures using high annealing temperatures (870 C). However, oriented although poorly connected, superconducting BSCCO films were fabricated on Ag/Al2O3 structures by using lower annealing temperatures (820 C). Once lower processing temperatures are optimized, Ag may be usable as a buffer layer for BSCCO films.

  18. Optically induced lattice deformations, electronic structure changes, and enhanced superconductivity in YBa 2Cu 3O 6.48

    DOE PAGES

    Mankowsky, R.; Fechner, M.; Forst, M.; ...

    2017-02-28

    Resonant optical excitation of apical oxygen vibrational modes in the normal state of underdoped YBa 2Cu 3O 6+x induces a transient state with optical properties similar to those of the equilibrium superconducting state. Amongst these, a divergent imaginary conductivity and a plasma edge are transiently observed in the photo-stimulated state. Femtosecond hard x-ray diffraction experiments have been used in the past to identify the transient crystal structure in this non-equilibrium state. Here, we start from these crystallographic features and theoretically predict the corresponding electronic rearrangements that accompany these structural deformations. Using density functional theory, we predict enhanced hole-doping of themore » CuO 2 planes. The empty chain Cu dy2-z2 orbital is calculated to strongly reduce in energy, which would increase c-axis transport and potentially enhance the interlayer Josephson coupling as observed in the THz-frequency response. From these results, we calculate changes in the soft x-ray absorption spectra at the Cu L-edge. As a result, femtosecond x-ray pulses from a free electron laser are used to probe changes in absorption at two photon energies along this spectrum and provide data consistent with these predictions.« less

  19. Knight shift and spin-echo decay time of YBa{sub 2}Cu{sub 4}O{sub 8} and YBa{sub 2}Cu{sub 3}O{sub 7} in the superconducting state

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pines, D.; Wrobel, P.

    1996-03-01

    We report on calculations of the Knight shift and spin-echo decay time, {ital T}{sub 2{ital G}}, in the superconducting state which are based on a nearly antiferromagnetic Fermi-liquid description of the spin-fluctuation spectrum, in which a single spin component is responsible for the dynamic spin behavior and the magnetic interaction between the planar quasiparticles brings the system close to antiferromagnetic behavior. The dynamic spin susceptibility is described by a random-phase-approximation-like expression, with a restoring force which is unchanged from the normal state, and an irreducible particle-hole susceptibility which reflects the {ital d}{sub {ital x}{sup 2}{minus}{ital y}{sup 2}} symmetry of themore » gap parameter and a quasiparticle Fermi surface consistent with photoemission experiments. We obtain a quantitative fit to the Knight shift results for YBa{sub 2}Cu{sub 4}O{sub 8} with a {ital d}{sub {ital x}{sup 2}{minus}{ital y}{sup 2}} strong coupling gap of maximum magnitude 2.8{ital k}{sub {ital BT}}{sub {ital c}}, and show that quantitative agreement with the recent measurements of {ital T}{sub 2{ital G}} by Corey {ital et al}. may be obtained with this {ital d}{sub {ital x}{sup 2}-{ital y}{sup 2}} pairing state and a quite substantial antiferromagnetic enhancement ({approximately}140) of the static {open_quote}{open_quote}band structure{close_quote}{close_quote} spin susceptibility at wave vectors in the vicinity of {bold Q}=({pi},{pi}). We demonstrate that the experimental results of Corey {ital et al}. rule out an anisotropic {ital s}-wave state. Analogous calculations for the Knight shift of YBa{sub 2}Cu{sub 3}O{sub 7} suggest that the {ital d}{sub {ital x}{sup 2}-{ital y}{sup 2}} strong coupling gap possesses a maximum magnitude, 2.6{ital k}{sub {ital BT}}{sub {ital c}}, and on this basis, we predict a reduction in {ital T}{sup -1}{sub 2{ital G}} of some 5% for the smaller antiferromagnetic enhancement ({approximately}38) expected for this

  20. CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Ghongadi, Shantinath R.; Pandit, Mandar B.; Jahagirdar, Anant H.; Scheiman, David

    2002-01-01

    CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal