Bipartite charge fluctuations in one-dimensional Z2 superconductors and insulators

NASA Astrophysics Data System (ADS)

Herviou, Loïc; Mora, Christophe; Le Hur, Karyn

2017-09-01

Bipartite charge fluctuations (BCFs) have been introduced to provide an experimental indication of many-body entanglement. They have proved themselves to be a very efficient and useful tool to characterize quantum phase transitions in a variety of quantum models conserving the total number of particles (or magnetization for spin systems) and can be measured experimentally. We study the BCFs in generic one-dimensional Z2 (topological) models including the Kitaev superconducting wire model, the Ising chain, or various topological insulators such as the Su-Schrieffer-Heeger model. The considered charge (either the fermionic number or the relative density) is no longer conserved, leading to macroscopic fluctuations of the number of particles. We demonstrate that at phase transitions characterized by a linear dispersion, the BCFs probe the change in a winding number that allows one to pinpoint the transition and corresponds to the topological invariant for standard models. Additionally, we prove that a subdominant logarithmic contribution is still present at the exact critical point. Its quantized coefficient is universal and characterizes the critical model. Results are extended to the Rashba topological nanowires and to the X Y Z model.

Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

NASA Astrophysics Data System (ADS)

Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

2018-06-01

In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials.

PubMed

Nikolic, Aleksandar; Zhang, Kexin; Barnes, C H W

2018-06-13

In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material's ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb 2 Te 3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

Unconventional Topological Phase Transition in Two-Dimensional Systems with Space-Time Inversion Symmetry

NASA Astrophysics Data System (ADS)

Ahn, Junyeong; Yang, Bohm-Jung

2017-04-01

We study a topological phase transition between a normal insulator and a quantum spin Hall insulator in two-dimensional (2D) systems with time-reversal and twofold rotation symmetries. Contrary to the case of ordinary time-reversal invariant systems, where a direct transition between two insulators is generally predicted, we find that the topological phase transition in systems with an additional twofold rotation symmetry is mediated by an emergent stable 2D Weyl semimetal phase between two insulators. Here the central role is played by the so-called space-time inversion symmetry, the combination of time-reversal and twofold rotation symmetries, which guarantees the quantization of the Berry phase around a 2D Weyl point even in the presence of strong spin-orbit coupling. Pair creation and pair annihilation of Weyl points accompanying partner exchange between different pairs induces a jump of a 2D Z2 topological invariant leading to a topological phase transition. According to our theory, the topological phase transition in HgTe /CdTe quantum well structure is mediated by a stable 2D Weyl semimetal phase because the quantum well, lacking inversion symmetry intrinsically, has twofold rotation about the growth direction. Namely, the HgTe /CdTe quantum well can show 2D Weyl semimetallic behavior within a small but finite interval in the thickness of HgTe layers between a normal insulator and a quantum spin Hall insulator. We also propose that few-layer black phosphorus under perpendicular electric field is another candidate system to observe the unconventional topological phase transition mechanism accompanied by the emerging 2D Weyl semimetal phase protected by space-time inversion symmetry.

Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature

PubMed Central

Ji, Wei-xiao; Zhang, Chang-wen; Ding, Meng; Li, Ping; Li, Feng; Ren, Miao-juan; Wang, Pei-ji; Hu, Shu-jun; Yan, Shi-shen

2015-01-01

The search for quantum spin Hall (QSH) insulators with high stability, large and tunable gap and topological robustness, is critical for their realistic application at high temperature. Using first-principle calculations, we predict the cyanogen saturated stanene SnCN as novel topological insulators material, with a bulk gap as large as 203 meV, which can be engineered by applying biaxial strain and electric field. The band topology is identified by Z2 topological invariant together with helical edge states, and the mechanism is s-pxy band inversion at G point induced by spin-orbit coupling (SOC). Remarkably, these systems have robust topology against chemical impurities, based on the calculations on halogen and cyano group co-decorated stanene SnXxX′1−x (X,X′  =  F, Cl, Br, I and CN), which makes it an appropriate and flexible candidate material for spintronic devices. PMID:26688269

Topological phases protected by point group symmetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Hao; Huang, Sheng -Jie; Fu, Liang

We consider symmetry-protected topological (SPT) phases with crystalline point group symmetry, dubbed point group SPT (pgSPT) phases. We show that such phases can be understood in terms of lower-dimensional topological phases with on-site symmetry and that they can be constructed as stacks and arrays of these lower-dimensional states. This provides the basis for a general framework to classify and characterize bosonic and fermionic pgSPT phases, which can be applied for arbitrary crystalline point group symmetry and in arbitrary spatial dimensions. We develop and illustrate this framework by means of a few examples, focusing on three-dimensional states. We classify bosonic pgSPTmore » phases and fermionic topological crystalline superconductors with Z P 2 (reflection) symmetry, electronic topological crystalline insulators (TCIs) with U(1)×Z P 2 symmetry, and bosonic pgSPT phases with C 2v symmetry, which is generated by two perpendicular mirror reflections. We also study surface properties, with a focus on gapped, topologically ordered surface states. For electronic TCIs, we find a Z 8 × Z 2 classification, where the Z 8 corresponds to known states obtained from noninteracting electrons, and the Z 2 corresponds to a “strongly correlated” TCI that requires strong interactions in the bulk. Lastly, our approach may also point the way toward a general theory of symmetry-enriched topological phases with crystalline point group symmetry.« less

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

NASA Astrophysics Data System (ADS)

Qi, Jingshan; Li, Xiao; Qian, Xiaofeng

2016-06-01

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z2 invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

PubMed Central

Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Sheng-shi; Yan, Shi-shen; Hu, Shu-jun; Li, Ping; Wang, Pei-ji; Li, Feng

2016-01-01

Quantum spin Hall (QSH) insulators feature edge states that topologically protected from backscattering. However, the major obstacles to application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Based on first-principles calculations, we predict a class of large-gap QSH insulators in ethynyl-derivative functionalized stanene (SnC2X; X = H, F, Cl, Br, I), allowing for viable applications at room temperature. Noticeably, the SnC2Cl, SnC2Br, and SnC2I are QSH insulators with a bulk gap of ~0.2 eV, while the SnC2H and SnC2F can be transformed into QSH insulator under the tensile strains. A single pair of topologically protected helical edge states is established for the edge of these systems with the Dirac point locating at the bulk gap, and their QSH states are confirmed with topological invariant Z2 = 1. The films on BN substrate also maintain a nontrivial large-gap QSH effect, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of large-gap QSH insulators based on two-dimensional honeycomb lattices in spintronics. PMID:26728874

Unexpected Giant-Gap Quantum Spin Hall Insulator in Chemically Decorated Plumbene Monolayer

PubMed Central

Zhao, Hui; Zhang, Chang-wen; Ji, Wei-xiao; Zhang, Run-wu; Li, Sheng-shi; Yan, Shi-shen; Zhang, Bao-min; Li, Ping; Wang, Pei-ji

2016-01-01

Quantum spin Hall (QSH) effect of two-dimensional (2D) materials features edge states that are topologically protected from backscattering by time-reversal symmetry. However, the major obstacles to the application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Here, we predict a novel class of 2D QSH insulators in X-decorated plumbene monolayers (PbX; X = H, F, Cl, Br, I) with extraordinarily giant bulk gaps from 1.03 eV to a record value of 1.34 eV. The topological characteristic of PbX mainly originates from s-px,y band inversion related to the lattice symmetry, while the effect of spin-orbital coupling (SOC) is only to open up a giant gap. Their QSH states are identified by nontrivial topological invariant Z2 = 1, as well as a single pair of topologically protected helical edge states locating inside the bulk gap. Noticeably, the QSH gaps of PbX are tunable and robust via external strain. We also propose high-dielectric-constant BN as an ideal substrate for the experimental realization of PbX, maintaining its nontrivial topology. These novel QSH insulators with giant gaps are a promising platform to enrich topological phenomena and expand potential applications at high temperature. PMID:26833133

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Te,Se)3

NASA Astrophysics Data System (ADS)

Jeffries, Jason; Butch, N. P.; Vohra, Y. K.; Weir, S. T.

2014-03-01

The group V-VI compounds--like Bi2Se3, Sb2Te3, or Bi2Te3--have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and compare that behavior with other binary V-VI compounds under pressure. Lawrence Livermore National Laboratory is operated by Lawrence Livermore National Security, LLC, for the U.S. Department of Energy, National Nuclear Security Administration under Contract DE-AC52-07NA27344.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Yishuai; Chiu, Janet; Miao, Lin

Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond themore » localized regime usually associated with impurity bands. Lastly, at native densities in the model Bi 2X 3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.« less

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Jingshan, E-mail: qijingshan@jsnu.edu.cn, E-mail: feng@tamu.edu; Li, Xiao; Qian, Xiaofeng, E-mail: qijingshan@jsnu.edu.cn, E-mail: feng@tamu.edu

2016-06-20

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z{sub 2} invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route tomore » manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.« less

Classification of topological insulators and superconductors in three spatial dimensions

NASA Astrophysics Data System (ADS)

Schnyder, Andreas P.; Ryu, Shinsei; Furusaki, Akira; Ludwig, Andreas W. W.

2008-11-01

We systematically study topological phases of insulators and superconductors (or superfluids) in three spatial dimensions. We find that there exist three-dimensional (3D) topologically nontrivial insulators or superconductors in five out of ten symmetry classes introduced in seminal work by Altland and Zirnbauer within the context of random matrix theory, more than a decade ago. One of these is the recently introduced Z2 topological insulator in the symplectic (or spin-orbit) symmetry class. We show that there exist precisely four more topological insulators. For these systems, all of which are time-reversal invariant in three dimensions, the space of insulating ground states satisfying certain discrete symmetry properties is partitioned into topological sectors that are separated by quantum phase transitions. Three of the above five topologically nontrivial phases can be realized as time-reversal invariant superconductors. In these the different topological sectors are characterized by an integer winding number defined in momentum space. When such 3D topological insulators are terminated by a two-dimensional surface, they support a number (which may be an arbitrary nonvanishing even number for singlet pairing) of Dirac fermion (Majorana fermion when spin-rotation symmetry is completely broken) surface modes which remain gapless under arbitrary perturbations of the Hamiltonian that preserve the characteristic discrete symmetries, including disorder. In particular, these surface modes completely evade Anderson localization from random impurities. These topological phases can be thought of as three-dimensional analogs of well-known paired topological phases in two spatial dimensions such as the spinless chiral (px±ipy) -wave superconductor (or Moore-Read Pfaffian state). In the corresponding topologically nontrivial (analogous to “weak pairing”) and topologically trivial (analogous to “strong pairing”) 3D phases, the wave functions exhibit markedly distinct behavior. When an electromagnetic U(1) gauge field and fluctuations of the gap functions are included in the dynamics, the superconducting phases with nonvanishing winding number possess nontrivial topological ground-state degeneracies.

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb) 2 (Se,Te) 3

DOE PAGES

Jeffries, J. R.; Butch, N. P.; Vohra, Y. K.; ...

2015-03-18

The group V-VI compounds|like Bi 2Se 3, Sb 2Te 3, or Bi 2Te 3|have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb) 2(Te,Se) 3 compound. Similar to some ofmore » its sister compounds, the (Bi,Sb) 2(Te,Se) 3 pseudobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.« less

Chiral magnetic conductivity and surface states of Weyl semimetals in topological insulator ultra-thin film multilayer.

PubMed

Owerre, S A

2016-06-15

We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.

Short-ranged interaction effects on Z2 topological phase transitions: The perturbative mean-field method

NASA Astrophysics Data System (ADS)

Lai, Hsin-Hua; Hung, Hsiang-Hsuan

2015-02-01

Time-reversal symmetric topological insulator (TI) is a novel state of matter that a bulk-insulating state carries dissipationless spin transport along the surfaces, embedded by the Z2 topological invariant. In the noninteracting limit, this exotic state has been intensively studied and explored with realistic systems, such as HgTe/(Hg, Cd)Te quantum wells. On the other hand, electronic correlation plays a significant role in many solid-state systems, which further influences topological properties and triggers topological phase transitions. Yet an interacting TI is still an elusive subject and most related analyses rely on the mean-field approximation and numerical simulations. Among the approaches, the mean-field approximation fails to predict the topological phase transition, in particular at intermediate interaction strength without spontaneously breaking symmetry. In this paper, we develop an analytical approach based on a combined perturbative and self-consistent mean-field treatment of interactions that is capable of capturing topological phase transitions beyond either method when used independently. As an illustration of the method, we study the effects of short-ranged interactions on the Z2 TI phase, also known as the quantum spin Hall (QSH) phase, in three generalized versions of the Kane-Mele (KM) model at half-filling on the honeycomb lattice. The results are in excellent agreement with quantum Monte Carlo (QMC) calculations on the same model and cannot be reproduced by either a perturbative treatment or a self-consistent mean-field treatment of the interactions. Our analytical approach helps to clarify how the symmetries of the one-body terms of the Hamiltonian determine whether interactions tend to stabilize or destabilize a topological phase. Moreover, our method should be applicable to a wide class of models where topological transitions due to interactions are in principle possible, but are not correctly predicted by either perturbative or self-consistent treatments.

Two-dimensional symmetry-protected topological orders and their protected gapless edge excitations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Xie; Liu Zhengxin; Wen Xiaogang

2011-12-15

Topological insulators in free fermion systems have been well characterized and classified. However, it is not clear in strongly interacting boson or fermion systems what symmetry-protected topological orders exist. In this paper, we present a model in a two-dimensional (2D) interacting spin system with nontrivial onsite Z{sub 2} symmetry-protected topological order. The order is nontrivial because we can prove that the one-dimensional (1D) system on the boundary must be gapless if the symmetry is not broken, which generalizes the gaplessness of Wess-Zumino-Witten model for Lie symmetry groups to any discrete symmetry groups. The construction of this model is related tomore » a nontrivial 3-cocycle of the Z{sub 2} group and can be generalized to any symmetry group. It potentially leads to a complete classification of symmetry-protected topological orders in interacting boson and fermion systems of any dimension. Specifically, this exactly solvable model has a unique gapped ground state on any closed manifold and gapless excitations on the boundary if Z{sub 2} symmetry is not broken. We prove the latter by developing the tool of a matrix product unitary operator to study the nonlocal symmetry transformation on the boundary and reveal the nontrivial 3-cocycle structure of this transformation. Similar ideas are used to construct a 2D fermionic model with onsite Z{sub 2} symmetry-protected topological order.« less

Associating Specific Materials with Topological Insulation Behavior

NASA Astrophysics Data System (ADS)

Zhang, Xiuwen

2014-03-01

The first-principles (a) total-energy/stability calculations combined with (b) electronic structure calculations of band inversion, spin-polarization and topological invariants (Z2) has led to the design and prediction of specific materials that are topological insulators in this study. We classify bulk materials into four types of band-inversion behaviors (TI-1, TI-2, BI-3, BI-4), based on the number of band inversions and their distributions on various time reversal invariant k points. Depending on the inversion type in bulk, the corresponding surface states have different protections e.g., protected by time reversal symmetry (in TI-1 materials), spatial symmetry (in TI-2), or not protected (in BI-3, BI-4). Subject 1 Discovery of new TI by screening materials for a Z2 metric: Such high-throughput search in the framework of Inverse Design methodology predicts a few previously undocumented materials that are TI-1 in their ground state crystal structure. We also predict dozens of materials that are TI-1 however in structures that are not ground states (e.g. perovskite structure of II-Bi-O3). Subject 2 Design Principle to increase the gap of TI-1 materials: In HgTe-like cubic topological materials, the insulating gap is zero since the spin-orbit splitting is positive and so a 4-fold half-filled p-like band is near the Fermi level. By design of hybridization of d-orbitals into the p-like bands, one can create negative spin-orbit splitting and so a finite insulating gap. Subject 3 Unconventional spin textures of TI surface states: Despite the fact that one of our predicted TI-1 KBaBi has inversion symmetry in the bulk-a fact that that would preclude bulk spin polarization-we find a Dresselhaus-like spin texture with non-helical spin texture. This originates from the local spin polarization, anchored on the atomic sites with inversion asymmetric point groups, that is compensated due to global inversion symmetry in bulk. In collaboration with: Jun-Wei Luo, Qihang Liu, Julien Vidal, and Alex Zunger, and supported in part by National Science Foundation DMREF. X.Z. acknowledges the administrative support of REMRSEC at Colorado School of Mines, Golden, Colorado.

Laser angle-resolved photoemission as a probe of initial state k z dispersion, final-state band gaps, and spin texture of Dirac states in the Bi 2Te 3 topological insulator

DOE PAGES

Ärrälä, Minna; Hafiz, Hasnain; Mou, Daixiang; ...

2016-10-27

Here, we have obtained angle-resolved photoemission (ARPES) spectra from single crystals of the topological insulator material Bi 2Te 3 using tunable laser spectrometer. The spectra were collected for eleven different photon energies ranging from 5.57 to 6.70 eV for incident light polarized linearly along two different in-plane directions. Parallel first-principles, fully relativistic computations of photo-intensities were carried out using the experimental geometry within the framework of the one-step model of photoemission. Good overall accord between theory and experiment is used to gain insight into how properties of the initial and final state band structures as well as those of themore » topological surface states and their spin-textures are reflected in the laser-ARPES spectra. In conclusion, our analysis reveals that laser-ARPES is sensitive to both the initial state k z dispersion and the presence of delicate gaps in the final state electronic spectrum.« less

Invariance of Topological Indices Under Hilbert Space Truncation

DOE PAGES

Huang, Zhoushen; Zhu, Wei; Arovas, Daniel P.; ...

2018-01-05

Here, we show that the topological index of a wave function, computed in the space of twisted boundary phases, is preserved under Hilbert space truncation, provided the truncated state remains normalizable. If truncation affects the boundary condition of the resulting state, the invariant index may acquire a different physical interpretation. If the index is symmetry protected, the truncation should preserve the protecting symmetry. We discuss implications of this invariance using paradigmatic integer and fractional Chern insulators, Z 2 topological insulators, and spin-1 Affleck-Kennedy-Lieb-Tasaki and Heisenberg chains, as well as its relation with the notion of bulk entanglement. As a possiblemore » application, we propose a partial quantum tomography scheme from which the topological index of a generic multicomponent wave function can be extracted by measuring only a small subset of wave function components, equivalent to the measurement of a bulk entanglement topological index.« less

Invariance of Topological Indices Under Hilbert Space Truncation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zhoushen; Zhu, Wei; Arovas, Daniel P.

Here, we show that the topological index of a wave function, computed in the space of twisted boundary phases, is preserved under Hilbert space truncation, provided the truncated state remains normalizable. If truncation affects the boundary condition of the resulting state, the invariant index may acquire a different physical interpretation. If the index is symmetry protected, the truncation should preserve the protecting symmetry. We discuss implications of this invariance using paradigmatic integer and fractional Chern insulators, Z 2 topological insulators, and spin-1 Affleck-Kennedy-Lieb-Tasaki and Heisenberg chains, as well as its relation with the notion of bulk entanglement. As a possiblemore » application, we propose a partial quantum tomography scheme from which the topological index of a generic multicomponent wave function can be extracted by measuring only a small subset of wave function components, equivalent to the measurement of a bulk entanglement topological index.« less

Orbital selective spin-texture in a topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Bahadur, E-mail: bahadursingh24@gmail.com; Prasad, R.

Three-dimensional topological insulators support a metallic non-trivial surface state with unique spin texture, where spin and momentum are locked perpendicular to each other. In this work, we investigate the orbital selective spin-texture associated with the topological surface states in Sb2Te{sub 3}, using the first principles calculations. Sb2Te{sub 3} is a strong topological insulator with a p-p type bulk band inversion at the Γ-point and supports a single topological metallic surface state with upper (lower) Dirac-cone has left (right) handed spin-texture. Here, we show that the topological surface state has an additional locking between the spin and orbitals, leading to anmore » orbital selective spin-texture. The out-of-plane orbitals (p{sub z} orbitals) have an isotropic orbital texture for both the Dirac cones with an associated left and right handed spin-texture for the upper and lower Dirac cones, respectively. In contrast, the in-planar orbital texture (p{sub x} and p{sub y} projections) is tangential for the upper Dirac-cone and is radial for the lower Dirac-cone surface state. The dominant in-planar orbital texture in both the Dirac cones lead to a right handed orbital-selective spin-texture.« less

Infinite family of three-dimensional Floquet topological paramagnets

NASA Astrophysics Data System (ADS)

Potter, Andrew C.; Vishwanath, Ashvin; Fidkowski, Lukasz

2018-06-01

We uncover an infinite family of time-reversal symmetric 3 d interacting topological insulators of bosons or spins, in time-periodically driven systems, which we term Floquet topological paramagnets (FTPMs). These FTPM phases exhibit intrinsically dynamical properties that could not occur in thermal equilibrium and are governed by an infinite set of Z2-valued topological invariants, one for each prime number. The topological invariants are physically characterized by surface magnetic domain walls that act as unidirectional quantum channels, transferring quantized packets of information during each driving period. We construct exactly solvable models realizing each of these phases, and discuss the anomalous dynamics of their topologically protected surface states. Unlike previous encountered examples of Floquet SPT phases, these 3 d FTPMs are not captured by group cohomology methods and cannot be obtained from equilibrium classifications simply by treating the discrete time translation as an ordinary symmetry. The simplest such FTPM phase can feature anomalous Z2 (toric code) surface topological order, in which the gauge electric and magnetic excitations are exchanged in each Floquet period, which cannot occur in a pure 2 d system without breaking time reversal symmetry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hermele, Michael; Chen, Xie

Here, we introduce a method, dubbed the flux-fusion anomaly test, to detect certain anomalous symmetry fractionalization patterns in two-dimensional symmetry-enriched topological (SET) phases. We focus on bosonic systems with Z2 topological order and a symmetry group of the form G=U(1)xG', where G' is an arbitrary group that may include spatial symmetries and/or time reversal. The anomalous fractionalization patterns we identify cannot occur in strictly d=2 systems but can occur at surfaces of d=3 symmetry-protected topological (SPT) phases. This observation leads to examples of d=3 bosonic topological crystalline insulators (TCIs) that, to our knowledge, have not previously been identified. In somemore » cases, these d=3 bosonic TCIs can have an anomalous superfluid at the surface, which is characterized by nontrivial projective transformations of the superfluid vortices under symmetry. The basic idea of our anomaly test is to introduce fluxes of the U(1) symmetry and to show that some fractionalization patterns cannot be extended to a consistent action of G' symmetry on the fluxes. For some anomalies, this can be described in terms of dimensional reduction to d=1 SPT phases. We apply our method to several different symmetry groups with nontrivial anomalies, including G=U(1)×Z T 2 and G=U(1)×Z P 2, where Z T 2 and Z P 2 are time-reversal and d=2 reflection symmetry, respectively.« less

Strong and weak second-order topological insulators with hexagonal symmetry and ℤ3 index

NASA Astrophysics Data System (ADS)

Ezawa, Motohiko

2018-06-01

We propose second-order topological insulators (SOTIs) whose lattice structure has a hexagonal symmetry C6. We start with a three-dimensional weak topological insulator constructed on a stacked triangular lattice, which has only side topological surface states. We then introduce an additional mass term which gaps out the side surface states but preserves the hinge states. The resultant system is a three-dimensional SOTI. The bulk topological quantum number is shown to be the Z3 index protected by inversion time-reversal symmetry I T and rotoinversion symmetry I C6 . We obtain three phases: trivial, strong, and weak SOTI phases. We argue the origin of these two types of SOTIs. A hexagonal prism is a typical structure respecting these symmetries, where six topological hinge states emerge at the side. The building block is a hexagon in two dimensions, where topological corner states emerge at the six corners in the SOTI phase. Strong and weak SOTIs are obtained when the interlayer hopping interaction is strong and weak, respectively.

Hidden landscapes in thin film topological insulators: between order and disorder, 2D and 3D, normal and topological phases

NASA Astrophysics Data System (ADS)

Oh, Seongshik

Topological insulator (TI) is one of the rare systems in the history of condensed matter physics that is initiated by theories and followed by experiments. Although this theory-driven advance helped move the field quite fast despite its short history, apparently there exist significant gaps between theories and experiments. Many of these discrepancies originate from the very fact that the worlds readily accessible to theories are often far from the real worlds that are available in experiments. For example, the very paradigm of topological protection of the surface states on Z2 TIs such as Bi2Se3, Bi2Te3, Sb2Te3, etc, is in fact valid only if the sample size is infinite and the crystal momentum is well-defined in all three dimensions. On the other hand, many widely studied forms of TIs such as thin films and nano-wires have significant confinement in one or more of the dimensions with varying level of disorders. In other words, many of the real world topological systems have some important parameters that are not readily captured by theories, and thus it is often questionable how far the topological theories are valid to real systems. Interestingly, it turns out that this very uncertainty of the theories provides additional control knobs that allow us to explore hidden topological territories. In this talk, I will discuss how these additional knobs in thin film topological insulators reveal surprising, at times beautiful, landscapes at the boundaries between order and disorder, 2D and 3D, normal and topological phases. This work is supported by Gordon and Betty Moore Foundation's EPiQS Initiative (GBMF4418).

Saddle-like topological surface states on the T T'X family of compounds (T , T' = Transition metal, X =Si , Ge)

NASA Astrophysics Data System (ADS)

Singh, Bahadur; Zhou, Xiaoting; Lin, Hsin; Bansil, Arun

2018-02-01

Topological nodal-line semimetals are exotic conductors that host symmetry-protected conducting nodal lines in their bulk electronic spectrum and nontrivial drumhead states on the surface. Based on first-principles calculations and an effective model analysis, we identify the presence of topological nodal-line semimetal states in the low crystalline symmetric T T'X family of compounds (T ,T' = transition metal, X = Si or Ge) in the absence of spin-orbit coupling (SOC). Taking ZrPtGe as an exemplar system, we show that owing to small lattice symmetry this material harbors a single nodal line on the ky=0 plane with large energy dispersion and unique drumhead surface state with a saddlelike energy dispersion. When the SOC is included, the nodal line gaps out and the system transitions to a strong topological insulator state with Z2=(1 ;000 ) . The topological surface state evolves from the drumhead surface state via the sharing of its saddlelike energy dispersion within the bulk energy gap. These features differ remarkably from those of the currently known topological surface states in topological insulators such as Bi2Se3 with Dirac-cone-like energy dispersions.

Organizing symmetry-protected topological phases by layering and symmetry reduction: A minimalist perspective

NASA Astrophysics Data System (ADS)

Xiong, Charles Zhaoxi; Alexandradinata, A.

2018-03-01

It is demonstrated that fermionic/bosonic symmetry-protected topological (SPT) phases across different dimensions and symmetry classes can be organized using geometric constructions that increase dimensions and symmetry-reduction maps that change symmetry groups. Specifically, it is shown that the interacting classifications of SPT phases with and without glide symmetry fit into a short exact sequence, so that the classification with glide is constrained to be a direct sum of cyclic groups of order 2 or 4. Applied to fermionic SPT phases in the Wigner-Dyson class AII, this implies that the complete interacting classification in the presence of glide is Z4⊕Z2⊕Z2 in three dimensions. In particular, the hourglass-fermion phase recently realized in the band insulator KHgSb must be robust to interactions. Generalizations to spatiotemporal glide symmetries are discussed.

Perovskite ThTaN3: A large-thermopower topological crystalline insulator

NASA Astrophysics Data System (ADS)

Jung, Myung-Chul; Lee, Kwan-Woo; Pickett, Warren E.

2018-03-01

ThTaN3, a rare cubic perovskite nitride semiconductor, has been studied using ab initio methods. Spin-orbit coupling (SOC) results in band inversion and a band gap of 150 meV at the zone center. Despite trivial Z2 indices, two pairs of spin-polarized surface bands cross the gap near the zone center, indicating that this system is a topological crystalline insulator with the mirror Chern number of | Cm|=2 protected by the mirror and C4 rotational symmetries. Additionally, SOC doubles the Seebeck coefficient, leading to a maximum of ˜400 μ V /K at 150 K for carrier-doping levels of several 1017/cm3.ThTaN3 combines excellent bulk thermopower with parallel conduction through topological surface states that may point toward new possibilities for platforms for engineering devices with larger figures of merit.

Slow quenches in two-dimensional time-reversal symmetric Z2 topological insulators

NASA Astrophysics Data System (ADS)

Ulčakar, Lara; Mravlje, Jernej; Ramšak, Anton; Rejec, Tomaž

2018-05-01

We study the topological properties and transport in the Bernevig-Hughes-Zhang model undergoing a slow quench between different topological regimes. Due to the closing of the band gap during the quench, the system ends up in an excited state. We prove that for quenches that preserve the time-reversal symmetry, the Z2 invariant remains equal to the one evaluated in the initial state. On the other hand, the bulk spin Hall conductivity does change, and its time average approaches that of the ground state of the final Hamiltonian. The deviations from the ground-state spin Hall conductivity as a function of the quench time follow the Kibble-Zurek scaling. We also consider the breaking of the time-reversal symmetry, which restores the correspondence between the bulk invariant and the transport properties after the quench.

Majorana fermion surface code for universal quantum computation

DOE PAGES

Vijay, Sagar; Hsieh, Timothy H.; Fu, Liang

2015-12-10

In this study, we introduce an exactly solvable model of interacting Majorana fermions realizing Z 2 topological order with a Z 2 fermion parity grading and lattice symmetries permuting the three fundamental anyon types. We propose a concrete physical realization by utilizing quantum phase slips in an array of Josephson-coupled mesoscopic topological superconductors, which can be implemented in a wide range of solid-state systems, including topological insulators, nanowires, or two-dimensional electron gases, proximitized by s-wave superconductors. Our model finds a natural application as a Majorana fermion surface code for universal quantum computation, with a single-step stabilizer measurement requiring no physicalmore » ancilla qubits, increased error tolerance, and simpler logical gates than a surface code with bosonic physical qubits. We thoroughly discuss protocols for stabilizer measurements, encoding and manipulating logical qubits, and gate implementations.« less

Topological insulators double perovskites: A2TePoO6 (A = Ca, Sr, Ba)

NASA Astrophysics Data System (ADS)

Lee, Po-Han; Zhou, Jian; Pi, Shu-Ting; Wang, Yin-Kuo

2017-12-01

Based on first-principle calculations and direct density functional theory calculations of surface bands, we predict a new class of three-dimensional (3D) Z2 topological insulators (TIs) with larger bulk bandgaps up to 0.4 eV in double perovskite materials A2TePoO6 (A = Ca, Sr, and Ba). The larger nontrivial gaps are induced by the symmetry-protected band contact along with band inversion occurring in the absence of spin-orbit coupling (SOC) making the SOC more effective than conventional TIs. The proposed materials are chemically inert and more robust to surface perturbations due to its intrinsic protection layer. This study provides the double perovskite material as a rich platform to design new TI-based electronic devices.

Antiferromagnetic Chern Insulators in Noncentrosymmetric Systems

NASA Astrophysics Data System (ADS)

Jiang, Kun; Zhou, Sen; Dai, Xi; Wang, Ziqiang

2018-04-01

We investigate a new class of topological antiferromagnetic (AF) Chern insulators driven by electronic interactions in two-dimensional systems without inversion symmetry. Despite the absence of a net magnetization, AF Chern insulators (AFCI) possess a nonzero Chern number C and exhibit the quantum anomalous Hall effect (QAHE). Their existence is guaranteed by the bifurcation of the boundary line of Weyl points between a quantum spin Hall insulator and a topologically trivial phase with the emergence of AF long-range order. As a concrete example, we study the phase structure of the honeycomb lattice Kane-Mele model as a function of the inversion-breaking ionic potential and the Hubbard interaction. We find an easy z axis C =1 AFCI phase and a spin-flop transition to a topologically trivial x y plane collinear antiferromagnet. We propose experimental realizations of the AFCI and QAHE in correlated electron materials and cold atom systems.

Gauge-theoretic invariants for topological insulators: a bridge between Berry, Wess-Zumino, and Fu-Kane-Mele

NASA Astrophysics Data System (ADS)

Monaco, Domenico; Tauber, Clément

2017-07-01

We establish a connection between two recently proposed approaches to the understanding of the geometric origin of the Fu-Kane-Mele invariant FKM\\in Z_2, arising in the context of two-dimensional time-reversal symmetric topological insulators. On the one hand, the Z_2 invariant can be formulated in terms of the Berry connection and the Berry curvature of the Bloch bundle of occupied states over the Brillouin torus. On the other, using techniques from the theory of bundle gerbes, it is possible to provide an expression for FKM containing the square root of the Wess-Zumino amplitude for a certain U( N)-valued field over the Brillouin torus. We link the two formulas by showing directly the equality between the above-mentioned Wess-Zumino amplitude and the Berry phase, as well as between their square roots. An essential tool of independent interest is an equivariant version of the adjoint Polyakov-Wiegmann formula for fields T^2 → U(N), of which we provide a proof employing only basic homotopy theory and circumventing the language of bundle gerbes.

Possible realization of interacting symmetry-protected topological phases in topological crystalline insulators

NASA Astrophysics Data System (ADS)

Isobe, Hiroki; Fu, Liang

2015-03-01

The effects of electron-electron interaction in edge states of mirror-symmetry protected topological crystalline insulators (TCI's) are discussed. The analysis is performed by using bosonized Hamiltonian following the Tomonaga-Luttinger liquid theory. When two pairs of helical edge states exist, electron-electron interaction could gap out one edge mode, which is a possible realization of interacting symmetry-protected topological (SPT) phases. This type of SPT phase is closely related to a Luther-Emery liquid in spinful 1D system. We also propose a method of detecting the SPT phases by STM. The other focus of the study is the classification of SPT phases in mirror-symmetry protected TCI's. By adopting the Chern-Simons theory, we find that electron-electron interaction reduces the classification from Z to Z4. It means that the edge states can be gapped out when four pairs of edge states exist. In other cases, the edge modes cannot be fully gapped. Each of these states corresponds to a different SPT phase depending on the relevant interaction process.

Strain-induced topological quantum phase transition in phosphorene oxide

NASA Astrophysics Data System (ADS)

Kang, Seoung-Hun; Park, Jejune; Woo, Sungjong; Kwon, Young-Kyun

Using ab initio density functional theory, we investigate the structural stability and electronic properties of phosphorene oxides (POx) with different oxygen compositions x. A variety of configurations are modeled and optimized geometrically to search for the equilibrium structure for each x value. Our electronic structure calculations on the equilibrium configuration obtained for each x reveal that the band gap tends to increase with the oxygen composition of x < 0.5, and then to decrease with x > 0.5. We further explore the strain effect on the electronic structure of the fully oxidized phosphorene, PO, with x = 1. At a particular strain without spin-orbit coupling (SOC) is observed a band gap closure near the Γ point in the k space. We further find the strain in tandem with SOC induces an interesting band inversion with a reopened very small band gap (5 meV), and thus gives rise to a topological quantum phase transition from a normal insulator to a topological insulator. Such a topological phase transition is confirmed by the wave function analysis and the band topology identified by the Z2 invariant calculation.

GW study of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3: Beyond the perturbative one-shot approach

NASA Astrophysics Data System (ADS)

Aguilera, Irene; Friedrich, Christoph; Bihlmayer, Gustav; Blügel, Stefan

2013-07-01

We present GW calculations of the topological insulators Bi2Se3, Bi2Te3, and Sb2Te3 within the all-electron full-potential linearized augmented-plane-wave formalism. Quasiparticle effects produce significant qualitative changes in the band structures of these materials when compared to density functional theory (DFT), especially at the Γ point, where band inversion takes place. There, the widely used perturbative one-shot GW approach can produce unphysical band dispersions, as the quasiparticle wave functions are forced to be identical to the noninteracting single-particle states. We show that a treatment beyond the perturbative approach, which incorporates the off-diagonal GW matrix elements and thus enables many-body hybridization to be effective in the quasiparticle wave functions, is crucial in these cases to describe the characteristics of the band inversion around the Γ point in an appropriate way. In addition, this beyond one-shot GW approach allows us to calculate the values of the Z2 topological invariants and compare them with those previously obtained within DFT.

Unconventional dynamics of electrons in topological insulators in a magnetic field: Berry phase effects

NASA Astrophysics Data System (ADS)

Demikhovskii, V. Ya.; Turkevich, R. V.

2015-04-01

The semiclassical dynamics of charge carriers moving over the surface of a Bi2Te3-type 3D topological insulator in a static magnetic field is studied. The effects related to the changes in the symmetry of constant energy surfaces (contours), as well as to the nonzero Berry curvature, are taken into account. It is shown that effects related both to the anomalous velocity proportional to the Berry curvature and to the distortions of the trajectories stemming from the additional contribution to the energy proportional the orbital magnetic moment of a wave packet appear in contrast to the conventional dynamics of electrons moving in a uniform static magnetic field along trajectories determined by the conditions E( k) = const and p z = const. This should lead to changes in the cyclotron resonance conditions for surface electrons. Although the magnetic field breaks the time-reversal symmetry and the topological order, the studies of the cyclotron resonance allow finding out whether a given insulator is a trivial one or not in zero magnetic field.

Anomalous spin Josephson effect

NASA Astrophysics Data System (ADS)

Wang, Mei-Juan; Wang, Jun; Hao, Lei; Liu, Jun-Feng

2016-10-01

We report a theoretical study on the spin Josephson effect arising from the exchange coupling of the two ferromagnets (Fs), which are deposited on a two-dimensional (2D) time-reversal-invariant topological insulator. An anomalous spin supercurrent Js z˜sin(α +α0) is found to flow in between the two Fs and the ground state of the system is not limited to the magnetically collinear configuration (α =n π ,n is an integer) but determined by a controllable angle α0, where α is the crossed angle between the two F magnetizations. The angle α0 is the dynamic phase of the electrons traveling in between the two Fs and can be controlled electrically by a gate voltage. This anomalous spin Josephson effect, similar to the conventional φ0 superconductor junction, originates from the definite electron chirality of the helical edge states in the 2D topological insulator. These results indicate that the magnetic coupling in a topological system is different from the usual one in conventional materials.

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Mingda; Song, Qichen; Zhao, Weiwei

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures

DOE PAGES

Li, Mingda; Song, Qichen; Zhao, Weiwei; ...

2017-11-01

The possible realization of dissipationless chiral edge current in a topological insulator/magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. We report a polarized neutron reflectometry observation of Dirac-electron-mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi 0.2Sb 0.8) 2Te 3/magnetic insulator EuS heterostructure. We are able to maximize the proximity-induced magnetism by applying an electrical back gate to tune the Fermi level of topological insulator to be close to the Dirac point. A phenomenological model based on diamagnetic screeningmore » is developed to explain the suppressed proximity-induced magnetism at high carrier density. Our work paves the way to utilize the magnetic proximity effect at the topological insulator/magnetic insulator heterointerface for low-power spintronic applications.« less

Delocalized metallic state on insulating, disordered BiSbTeSe2 thin films - a test of Z2 protection.

NASA Astrophysics Data System (ADS)

Gopal, Rk; Singh, Sourabh; Sarkar, Jit; Patro, Reshma; Roy, Subhadip; Mitra, Chiranjib; Quantum computation; Topological matter Group Team

We present thickness and temperature dependent magneto transport properties of bulk insulating and granular BiSbTeSe2 thin films, grown by pulsed laser deposition technique. The temperature dependent resistivity (R-T) of these films is found to be insulating (d ρ/dT <0) and resistivity changes thrice the magnitude measured at room temperature as temperature is varied from 300K to 1.8K. On application of small perpendicular magnetic field in the low temperature regime, the R-T takes an upward shift from the zero field R-T - a trademark signature of a metallic state on an insulating bulk film. The grain boundaries in these films, as seen by scanning electron microscopy, present an additional disorder and hence confinement/trapping centers to the surface Dirac states in comparison to the films grown by molecular beam epitaxy and single crystals, which have atomically flat surface. Therefore these films present real test for the topological protection of surface Dirac states and their immunity against localization which is known as Z2 protection. From the magnetoresistance (MR) measurements at low temperatures a sharp and relatively large rise in MR is found a signature of weak - antilocalization (WAL) -a signature of topologically protected surface states. The WAL analysis of the MR data reveals a phase breaking length of the order of grain size suggesting that grain Author is grateful to the Government of India and IISER-Kolkata for providing funding and experimental facilities for the following research work.

Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Shu, G. J.; Liou, S. C.; Karna, S. K.; Sankar, R.; Hayashi, M.; Chou, F. C.

2018-04-01

The layered narrow-band-gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling, which has been identified both as a good candidate for a thermoelectric material with high thermoelectric figure of merit (Z T ) and as a topological insulator of the Z2 type with a gapless surface band in a Dirac-cone shape. The existence of a conjugated π -bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model with valence electrons distributed in the hybridized orbitals. Supporting experimental evidence of a two-dimensional (2D) conjugated π -bond system on each quintuple layer of Bi2Se3 is provided using electron energy-loss spectroscopy and electron density mapping through inverse Fourier transform of x-ray diffraction data. Quantum chemistry calculations support the π -bond existence between partially filled 4 pz orbitals of Se via side-to-side orbital overlap positively. The conjugated π -bond system on the surface of each quintuple Bi2Se3 layer is proposed to be similar to that found in graphite (graphene) and responsible for the unique 2D conduction mechanism. The van der Waals (vdW) attractive force between quintuple layers is interpreted to be coming from the antiferroelectrically ordered effective electric dipoles, which are constructed with π -bond trimer pairs on Se layers across the vdW gap of minimized Coulomb repulsion.

Mixed-pairing superconductivity in 5 d Mott insulators with antisymmetric exchange: Application to Sr2IrO4

NASA Astrophysics Data System (ADS)

Zare, Mohammad-Hossein; Biderang, Mehdi; Akbari, Alireza

2017-11-01

We study the symmetry of the potential superconducting order parameter in 5 d Mott insulators with an eye toward hole-doped Sr2IrO4 . Using a mean-field method, a mixed singlet-triplet superconductivity, d +p , is observed due to the antisymmetric exchange originating from a quasi-spin-orbit coupling. Our calculation on ribbon geometry shows the possible existence of the topologically protected edge states, because of the nodal structure of the superconducting gap. These edge modes are spin polarized and emerge as zero-energy flat bands, supporting a symmetry-protected Majorana state, verified by evaluation of the winding number and Z2 topological invariant. At the end, a possible experimental approach for observation of these edge states and determination of the superconducting gap symmetry is discussed based on the quasiparticle interference technique.

Squeezed Dirac and topological magnons in a bosonic honeycomb optical lattice

NASA Astrophysics Data System (ADS)

Owerre, S. A.; Nsofini, J.

2017-11-01

Quantum information storage using charge-neutral quasiparticles is expected to play a crucial role in the future of quantum computers. In this regard, magnons or collective spin-wave excitations in solid-state materials are promising candidates in the future of quantum computing. Here, we study the quantum squeezing of Dirac and topological magnons in a bosonic honeycomb optical lattice with spin-orbit interaction by utilizing the mapping to quantum spin-1/2 XYZ Heisenberg model on the honeycomb lattice with discrete Z2 symmetry and a Dzyaloshinskii-Moriya interaction. We show that the squeezed magnons can be controlled by the Z2 anisotropy and demonstrate how the noise in the system is periodically modified in the ferromagnetic and antiferromagnetic phases of the model. Our results also apply to solid-state honeycomb (anti)ferromagnetic insulators.

Squeezed Dirac and Topological Magnons in a Bosonic Honeycomb Optical Lattice.

PubMed

Owerre, Solomon; Nsofini, Joachim

2017-09-20

Quantum information storage using charge-neutral quasiparticles are expected to play a crucial role in the future of quantum computers. In this regard, magnons or collective spin-wave excitations in solid-state materials are promising candidates in the future of quantum computing. Here, we study the quantum squeezing of Dirac and topological magnons in a bosonic honeycomb optical lattice with spin-orbit interaction by utilizing the mapping to quantum spin-$1/2$ XYZ Heisenberg model on the honeycomb lattice with discrete Z$_2$ symmetry and a Dzyaloshinskii-Moriya interaction. We show that the squeezed magnons can be controlled by the Z$_2$ anisotropy and demonstrate how the noise in the system is periodically modified in the ferromagnetic and antiferromagnetic phases of the model. Our results also apply to solid-state honeycomb (anti)ferromagnetic insulators. . © 2017 IOP Publishing Ltd.

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator.

PubMed

Zhang, Shengli; Zhou, Wenhan; Ma, Yandong; Ji, Jianping; Cai, Bo; Yang, Shengyuan A; Zhu, Zhen; Chen, Zhongfang; Zeng, Haibo

2017-06-14

Highly stable antimonene, as the cousin of phosphorene from group-VA, has opened up exciting realms in the two-dimensional (2D) materials family. However, pristine antimonene is an indirect band gap semiconductor, which greatly restricts its applications for optoelectronics devices. Identifying suitable materials, both responsive to incident photons and efficient for carrier transfer, is urgently needed for ultrathin devices. Herein, by means of first-principles computations we found that it is rather feasible to realize a new class of 2D materials with a direct bandgap and high carrier mobility, namely antimonene oxides with different content of oxygen. Moreover, these tunable direct bandgaps cover a wide range from 0 to 2.28 eV, which are crucial for solar cell and photodetector applications. Especially, the antimonene oxide (18Sb-18O) is a 2D topological insulator with a sizable global bandgap of 177 meV, which has a nontrivial Z 2 topological invariant in the bulk and the topological states on the edge. Our findings not only introduce new vitality into 2D group-VA materials family and enrich available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

Hg-Based Epitaxial Materials for Topological Insulators

DTIC Science & Technology

2014-07-01

Research Laboratory for investigation of properties. 15. SUBJECT TERMS EOARD, topological insulator , diluted magnetic ...topological superconductors and spintronics to quantum computation (e.g. see C.L.Kane and J.E.Moore "Topological Insulators " Physics World (2011) 24...tetradymite semiconductors Bi2Te3, Bi2Se3, and Sb2Te3 which form magnetically ordered insulators when doped with transition metal elements Cr or Fe (Rui Yu et

Squeezed Dirac and topological magnons in a bosonic honeycomb optical lattice.

PubMed

Owerre, S A; Nsofini, J

2017-10-19

Quantum information storage using charge-neutral quasiparticles is expected to play a crucial role in the future of quantum computers. In this regard, magnons or collective spin-wave excitations in solid-state materials are promising candidates in the future of quantum computing. Here, we study the quantum squeezing of Dirac and topological magnons in a bosonic honeycomb optical lattice with spin-orbit interaction by utilizing the mapping to quantum spin-[Formula: see text] XYZ Heisenberg model on the honeycomb lattice with discrete Z 2 symmetry and a Dzyaloshinskii-Moriya interaction. We show that the squeezed magnons can be controlled by the Z 2 anisotropy and demonstrate how the noise in the system is periodically modified in the ferromagnetic and antiferromagnetic phases of the model. Our results also apply to solid-state honeycomb (anti)ferromagnetic insulators.

Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

NASA Astrophysics Data System (ADS)

Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

2018-04-01

In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

The impact of inversion and mirror reflection symmetry on Raman scattering of T'transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Yan, Jun; Chen, Shao-Yu; Naylor, Carl; Goldstein, Thomas; Johnson, Charlie; Venkataraman, Dhandapani; Ramasubramaniam, Ashwin

Distorted octahedral (T') transition metal dichalcogenides (TMDCs) are topologically interesting material systems. Inversion-symmetry-broken bulk T'-TMDCs are predicted to be type II Weyl semimetals and inversion-symmetric monolayer (1L) T'-TMDCs are shown to be 2D topological insulators. In this talk, I will show that both the inversion symmetry and the mirror symmetry are important for understanding the lattice dynamics and Raman scattering of T'-TMDCs. The mirror plane that is perpendicular to the zigzag transition metal atomic chain classifies lattice vibrations into z-modes and m-modes where ` z' stands for zigzag and ` m' stands for mirror. Raman active z- and m- modes can be experimentally determined with light-polarization and crystal angle-resolved Raman tensor analysis. We report observation of all 9 even-parity zone-center phonons in 1L-T'-MoTe2. In bulk T'-MoTe2, we monitor inversion symmetry breaking with the shear lattice vibrations, which is important for supporting Weyl fermions. This work is supported by the Armstrong Fund for Science and NSF EFRI 2DARE EFMA-1542879.

Composite particle theory of three-dimensional gapped fermionic phases: Fractional topological insulators and charge-loop excitation symmetry

NASA Astrophysics Data System (ADS)

Ye, Peng; Hughes, Taylor L.; Maciejko, Joseph; Fradkin, Eduardo

2016-09-01

Topological phases of matter are usually realized in deconfined phases of gauge theories. In this context, confined phases with strongly fluctuating gauge fields seem to be irrelevant to the physics of topological phases. For example, the low-energy theory of the two-dimensional (2D) toric code model (i.e., the deconfined phase of Z2 gauge theory) is a U(1 )×U(1 ) Chern-Simons theory in which gauge charges (i.e., e and m particles) are deconfined and the gauge fields are gapped, while the confined phase is topologically trivial. In this paper, we point out a route to constructing exotic three-dimensional (3D) gapped fermionic phases in a confining phase of a gauge theory. Starting from a parton construction with strongly fluctuating compact U(1 )×U(1 ) gauge fields, we construct gapped phases of interacting fermions by condensing two linearly independent bosonic composite particles consisting of partons and U(1 )×U(1 ) magnetic monopoles. This can be regarded as a 3D generalization of the 2D Bais-Slingerland condensation mechanism. Charge fractionalization results from a Debye-Hückel-type screening cloud formed by the condensed composite particles. Within our general framework, we explore two aspects of symmetry-enriched 3D Abelian topological phases. First, we construct a new fermionic state of matter with time-reversal symmetry and Θ ≠π , the fractional topological insulator. Second, we generalize the notion of anyonic symmetry of 2D Abelian topological phases to the charge-loop excitation symmetry (Charles ) of 3D Abelian topological phases. We show that line twist defects, which realize Charles transformations, exhibit non-Abelian fusion properties.

Topological spinon bands and vison excitations in spin-orbit coupled quantum spin liquids

NASA Astrophysics Data System (ADS)

Sonnenschein, Jonas; Reuther, Johannes

2017-12-01

Spin liquids are exotic quantum states characterized by the existence of fractional and deconfined quasiparticle excitations, referred to as spinons and visons. Their fractional nature establishes topological properties such as a protected ground-state degeneracy. This work investigates spin-orbit coupled spin liquids where, additionally, topology enters via nontrivial band structures of the spinons. We revisit the Z2 spin-liquid phases that have recently been identified in a projective symmetry-group analysis on the square lattice when spin-rotation symmetry is maximally lifted [J. Reuther et al., Phys. Rev. B 90, 174417 (2014), 10.1103/PhysRevB.90.174417]. We find that in the case of nearest-neighbor couplings only, Z2 spin liquids on the square lattice always exhibit trivial spinon bands. Adding second-neighbor terms, the simplest projective symmetry-group solution closely resembles the Bernevig-Hughes-Zhang model for topological insulators. Assuming that the emergent gauge fields are static, we investigate vison excitations, which we confirm to be deconfined in all investigated spin phases. Particularly, if the spinon bands are topological, the spinons and visons form bound states consisting of several spinon-Majorana zero modes coupling to one vison. The existence of such zero modes follows from an exact mapping between these spin phases and topological p +i p superconductors with vortices. We propose experimental probes to detect such states in real materials.

Quantum spin Hall insulator BiXH (XH = OH, SH) monolayers with a large bulk band gap.

PubMed

Hu, Xing-Kai; Lyu, Ji-Kai; Zhang, Chang-Wen; Wang, Pei-Ji; Ji, Wei-Xiao; Li, Ping

2018-05-16

A large bulk band gap is critical for the application of two-dimensional topological insulators (TIs) in spintronic devices operating at room temperature. On the basis of first-principles calculations, we predict BiXH (X = OH, SH) monolayers as TIs with an extraordinarily large bulk gap of 820 meV for BiOH and 850 meV for BiSH, and propose a tight-binding model considering spin-orbit coupling to describe the electronic properties of BiXH. These large gaps are entirely due to the strong spin-orbit interaction related to the pxy orbitals of the Bi atoms of the honeycomb lattice. The orbital filtering mechanism can be used to understand the topological properties of BiXH. The XH groups simply remove one branch of orbitals (pz of Bi) and reduce the trivial 6-band lattice into a 4-band, which is topologically non-trivial. The topological characteristics of BiXH monolayers are confirmed by nonzero topological invariant Z2 and a single pair of gapless helical edge states in the bulk gap. Owing to these features, the BiXH monolayers of the large-gap TIs are an ideal platform to realize many exotic phenomena and fabricate new quantum devices working at room temperature.

Influence of magnetic disorders on quantum anomalous Hall effect in magnetic topological insulator films beyond the two-dimensional limit

NASA Astrophysics Data System (ADS)

Xing, Yanxia; Xu, Fuming; Cheung, King Tai; Sun, Qing-feng; Wang, Jian; Yao, Yugui

2018-04-01

Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetic topological insulator (MTI) thin films fabricated on magnetically doped {({{Bi}},{{Sb}})}2{{{Te}}}3. In an MTI thin film with the magnetic easy axis along the normal direction (z-direction), orientations of magnetic dopants are randomly distributed around the magnetic easy axis, acting as magnetic disorders. With the aid of the non-equilibrium Green's function and Landauer–Büttiker formalism, we numerically study the influence of magnetic disorders on QAHE in an MTI thin film modeled by a three-dimensional tight-binding Hamiltonian. It is found that, due to the existence of gapless side surface states, QAHE is protected even in the presence of magnetic disorders as long as the z-component of magnetic moment of all magnetic dopants are positive. More importantly, such magnetic disorders also suppress the dissipation of the chiral edge states and enhance the quality of QAHE in MTI films. In addition, the effect of magnetic disorders depends very much on the film thickness, and the optimal influence is achieved at certain thickness. These findings are new features for QAHE in three-dimensional systems, not present in two-dimensional systems.

Topological triplon modes and bound states in a Shastry-Sutherland magnet

NASA Astrophysics Data System (ADS)

McClarty, P. A.; Krüger, F.; Guidi, T.; Parker, S. F.; Refson, K.; Parker, A. W.; Prabhakaran, D.; Coldea, R.

2017-08-01

The twin discoveries of the quantum Hall effect, in the 1980s, and of topological band insulators, in the 2000s, were landmarks in physics that enriched our view of the electronic properties of solids. In a nutshell, these discoveries have taught us that quantum mechanical wavefunctions in crystalline solids may carry nontrivial topological invariants which have ramifications for the observable physics. One of the side effects of the recent topological insulator revolution has been that such physics is much more widespread than was appreciated ten years ago. For example, while topological insulators were originally studied in the context of electron wavefunctions, recent work has initiated a hunt for topological insulators in bosonic systems: in photonic crystals, in the vibrational modes of crystals, and in the excitations of ordered magnets. Using inelastic neutron scattering along with theoretical calculations, we demonstrate that, in a weak magnetic field, the dimerized quantum magnet SrCu2(BO3)2 is a bosonic topological insulator with topologically protected chiral edge modes of triplon excitations.

Classification and characterization of topological insulators and superconductors

NASA Astrophysics Data System (ADS)

Mong, Roger

Topological insulators (TIs) are a new class of materials which, until recently, have been overlooked despite decades of study in band insulators. Like semiconductors and ordinary insulators, TIs have a bulk gap, but feature robust surfaces excitations which are protected from disorder and interactions which do not close the bulk gap. TIs are distinguished from ordinary insulators not by the symmetries they possess (or break), but by topological invariants characterizing their bulk band structures. These two pictures, the existence of gapless surface modes, and the nontrivial topology of the bulk states, yield two contrasting approaches to the study of TIs. At the heart of the subject, they are connected by the bulk-boundary correspondence, relating bulk and surface degrees of freedom. In this work, we study both aspects of topological insulators, at the same time providing an illumination to their mysterious connection. First, we present a systematic approach to the classification of bulk states of systems with inversion-like symmetries, deriving a complete set of topological invariants for such ensembles. We find that the topological invariants in all dimensions may be computed algebraically via exact sequences. In particular, systems with spatial inversion symmetries in one-, two-, and three-dimensions can be classified by, respectively, 2, 5, and 11 integer invariants. The values of these integers are related to physical observables such as polarization, Hall conductivity, and magnetoelectric coupling. We also find that, for systems with “antiferromagnetic symmetry,” there is a Z2 classification in three-dimensions, and hence a class of “antiferromagnetic topological insulators” (AFTIs) which are distinguished from ordinary antiferromagnets. From the perspective of the bulk, AFTI exhibits the quantized magnetoelectric effect, whereas on the surface, gapless one-dimensional chiral modes emerge at step-defects. Next, we study how the surface spectrum can be computed from bulk quantities. Specifically, we present an analytic prescription for computing the edge dispersion E(k) of a tight-binding Dirac Hamiltonian terminated at an abrupt crystalline edge, based on the bulk Hamiltonian. The result is presented as a geometric formula, relating the existence of surface states as well as their energy dispersion to properties of the bulk Hamiltonian. We further prove the bulk-boundary correspondence for this specific class of systems, connecting the Chern number and the chiral edge modes for quantum Hall systems given in terms of Dirac Hamiltonians. In similar spirit, we examine the existence of Majorana zero modes in superconducting doped-TIs. We find that Majorana zero modes indeed appear but only if the doped Fermi energy is below a critical chemical potential. The critical doping is associated with a topological phase transition of vortex lines, which supports gapless excitations spanning their length. For weak pairing, the critical point is dependent on the non-abelian Berry phase of the bulk Fermi surface. Finally, we investigate the transport properties on the surfaces of TIs. While the surfaces of “strong topological insulators” - TIs with an odd number of Dirac cones in their surface spectrum - have been well studied in literature, studies of their counterpart “weak topological insulators” (WTIs) are meager, with conflicting claims. Because WTIs have an even number of Dirac cones in their surface spectrum, they are thought to be unstable to disorder, which leads to an insulating surface. Here we argue that the presence of disorder alone will not localize the surface states, rather, presence of a time-reversal symmetric mass term is required for localization. Through numerical simulations, we show that in the absence of the mass term the surface always flow to a stable metallic phase and the conductivity obeys a one-parameter scaling relation, just as in the case of a strong topological insulator surface. With the inclusion of the mass, the transport properties of the surface of a weak topological insulator follow a two-parameter scaling form, reminiscent of the quantum Hall phase transition.

Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

PubMed

Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

2012-06-29

Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

Face Centered Cubic SnSe as a Z2 Trivial Dirac Nodal Line Material

NASA Astrophysics Data System (ADS)

Tateishi, Ikuma; Matsuura, Hiroyasu

2018-07-01

The presence of a Dirac nodal line in a time-reversal and inversion symmetric system is dictated by the Z2 index when spin-orbit interaction is absent. In a first principles calculation, we show that a Dirac nodal line can emerge in Z2 trivial material by calculating the band structure of SnSe in a face centered cubic lattice as an example. We qualitatively show that it becomes a topological crystalline insulator when spin-orbit interaction is taken into account. We clarify the origin of the Dirac nodal line by obtaining irreducible representations corresponding to bands and explain the triviality of the Z2 index. We construct an effective model representing the Dirac nodal line using the k · p method, and discuss the Berry phase and a surface state expected from the Dirac nodal line.

Emergent Momentum-Space Skyrmion Texture on the Surface of Topological Insulators

NASA Astrophysics Data System (ADS)

Mohanta, Narayan; Kampf, Arno P.; Kopp, Thilo

The quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehog-like ``spin'' texture in momentum space. Here, we apply the previously formulated low-energy model for Bi2Se3, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers. In this sample set up, the hedgehog transforms into a skyrmion texture beyond a critical exchange field. This critical field marks a transition between two topologically distinct phases. The topological phase transition takes place without energy gap closing at the Fermi level and leaves the transverse Hall conductance unchanged and quantized to e2 / 2 h . The momentum-space skyrmion texture persists in a finite field range. It may find its realization in hybrid heterostructures with an interface between a three-dimensional topological insulator and a ferromagnetic insulator. The work was supported by the Deutsche Forschungsgemeinschaft through TRR 80.

Photonic topological insulator with broken time-reversal symmetry

PubMed Central

He, Cheng; Sun, Xiao-Chen; Liu, Xiao-Ping; Lu, Ming-Hui; Chen, Yulin; Feng, Liang; Chen, Yan-Feng

2016-01-01

A topological insulator is a material with an insulating interior but time-reversal symmetry-protected conducting edge states. Since its prediction and discovery almost a decade ago, such a symmetry-protected topological phase has been explored beyond electronic systems in the realm of photonics. Electrons are spin-1/2 particles, whereas photons are spin-1 particles. The distinct spin difference between these two kinds of particles means that their corresponding symmetry is fundamentally different. It is well understood that an electronic topological insulator is protected by the electron’s spin-1/2 (fermionic) time-reversal symmetry Tf2=−1. However, the same protection does not exist under normal circumstances for a photonic topological insulator, due to photon’s spin-1 (bosonic) time-reversal symmetry Tb2=1. In this work, we report a design of photonic topological insulator using the Tellegen magnetoelectric coupling as the photonic pseudospin orbit interaction for left and right circularly polarized helical spin states. The Tellegen magnetoelectric coupling breaks bosonic time-reversal symmetry but instead gives rise to a conserved artificial fermionic-like-pseudo time-reversal symmetry, Tp (Tp2=−1), due to the electromagnetic duality. Surprisingly, we find that, in this system, the helical edge states are, in fact, protected by this fermionic-like pseudo time-reversal symmetry Tp rather than by the bosonic time-reversal symmetry Tb. This remarkable finding is expected to pave a new path to understanding the symmetry protection mechanism for topological phases of other fundamental particles and to searching for novel implementations for topological insulators. PMID:27092005

Topologically nontrivial Fermi regions and their novel electromagnetic response properties

NASA Astrophysics Data System (ADS)

Lee, Ching Hua; Zhang, Xiao

In the last decade, there has been a surge of interest in the application of topology to condensed matter physics. So far, most studies have been concerned with the novel properties that arise due to nontrivial band topology, i.e Quantum Anomalous Hall and Z2 topological insulators (TIs). In this talk, I shall describe another context where nontrivial topology also leads to interesting, measurable effects. Within the semi-classical Boltzmann approach, it can be shown that a topologically nontrivial Fermi sea region generically exhibits a non-monotonic nonlinear electromagnetic response in the limit of low chemical potential. Such topologically nontrivial regions of filled states can arise in experimentally realized TI heterostructures or materials with large Rashba splitting, i.e. BiTeI, where the Fermi sea is not simply connected. A non-monotonic electromagnetic response implies regimes of negative differential resistance, which have important applications in technologies involving microwave generation, like motion sensing and radio astronomy. We hope that nontrivial Fermi sea topology will hence provide another route for the realization of such technologies.

Classification of reflection-symmetry-protected topological semimetals and nodal superconductors

NASA Astrophysics Data System (ADS)

Chiu, Ching-Kai; Schnyder, Andreas P.

2014-11-01

While the topological classification of insulators, semimetals, and superconductors in terms of nonspatial symmetries is well understood, less is known about topological states protected by crystalline symmetries, such as mirror reflections and rotations. In this work, we systematically classify topological semimetals and nodal superconductors that are protected, not only by nonspatial (i.e., global) symmetries, but also by a crystal reflection symmetry. We find that the classification crucially depends on (i) the codimension of the Fermi surface (nodal line or point) of the semimetal (superconductor), (ii) whether the mirror symmetry commutes or anticommutes with the nonspatial symmetries, and (iii) how the Fermi surfaces (nodal lines or points) transform under the mirror reflection and nonspatial symmetries. The classification is derived by examining all possible symmetry-allowed mass terms that can be added to the Bloch or Bogoliubov-de Gennes Hamiltonian in a given symmetry class and by explicitly deriving topological invariants. We discuss several examples of reflection-symmetry-protected topological semimetals and nodal superconductors, including topological crystalline semimetals with mirror Z2 numbers and topological crystalline nodal superconductors with mirror winding numbers.

Architectures for Parafermionic Topological Matter in Two Dimensions

NASA Astrophysics Data System (ADS)

Burrello, Michele; van Heck, Bernard; Cobanera, Emilio

2013-03-01

Recent proposals exploit edge modes of fractional topological insulators (FTIs), induced superconducting pairing, and back-scattering to realize one-dimensional systems of parafermions. We extend these proposals to two dimensions and analyze the effect of the superconducting islands' charging energy on the parafermions they host. We focus on two two-dimensional architectures, the tile and stripe configurations, characterized by different distributions of FTIs and derive the associated parafermionic effective Hamiltonians. The tile model realizes the Z2 m toric code in low-order perturbation theory and hence possesses full topological quantum order. By exploiting dualities, we obtain the phase diagram and generalized order parameters for both the tile and stripe models of parafermions. This work was supported by the Dutch Science Foundation NWO/FOM and an ERC Advanced Investigator grant.

Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state

DOE PAGES

Wang, Jing; Lian, Biao; Qi, Xiao-Liang; ...

2015-08-10

The topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of $e²/2h$. Here in this paper, we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or a ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of the topological insulator film increases. We further propose a device setupmore » to eliminate nontopological contributions from the side surface.« less

Photoinduced Topological Phase Transitions in Topological Magnon Insulators.

PubMed

Owerre, S A

2018-03-13

Topological magnon insulators are the bosonic analogs of electronic topological insulators. They are manifested in magnetic materials with topologically nontrivial magnon bands as realized experimentally in a quasi-two-dimensional (quasi-2D) kagomé ferromagnet Cu(1-3, bdc), and they also possess protected magnon edge modes. These topological magnetic materials can transport heat as well as spin currents, hence they can be useful for spintronic applications. Moreover, as magnons are charge-neutral spin-1 bosonic quasiparticles with a magnetic dipole moment, topological magnon materials can also interact with electromagnetic fields through the Aharonov-Casher effect. In this report, we study photoinduced topological phase transitions in intrinsic topological magnon insulators in the kagomé ferromagnets. Using magnonic Floquet-Bloch theory, we show that by varying the light intensity, periodically driven intrinsic topological magnetic materials can be manipulated into different topological phases with different sign of the Berry curvatures and the thermal Hall conductivity. We further show that, under certain conditions, periodically driven gapped topological magnon insulators can also be tuned to synthetic gapless topological magnon semimetals with Dirac-Weyl magnon cones. We envision that this work will pave the way for interesting new potential practical applications in topological magnetic materials.

Revivals of electron currents and topological-band insulator transitions in 2D gapped Dirac materials

NASA Astrophysics Data System (ADS)

Romera, E.; Bolívar, J. C.; Roldán, J. B.; de los Santos, F.

2016-07-01

We have studied the time evolution of electron wave packets in silicene under perpendicular magnetic and electric fields to characterize topological-band insulator transitions. We have found that at the charge neutrality points, the periodicities exhibited by the wave packet dynamics (classical and revival times) reach maximum values, and that the electron currents reflect the transition from a topological insulator to a band insulator. This provides a signature of topological phase transition in silicene that can be extended to other 2D Dirac materials isostructural to graphene and with a buckled structure and a significant spin-orbit coupling.

Experimental and theoretical study of topology and electronic correlations in PuB4

NASA Astrophysics Data System (ADS)

Choi, Hongchul; Zhu, Wei; Cary, S. K.; Winter, L. E.; Huang, Zhoushen; McDonald, R. D.; Mocko, V.; Scott, B. L.; Tobash, P. H.; Thompson, J. D.; Kozimor, S. A.; Bauer, E. D.; Zhu, Jian-Xin; Ronning, F.

2018-05-01

We synthesize single crystals of PuB4 using an Al-flux technique. Single-crystal diffraction data provide structural parameters for first-principles density functional theory (DFT) calculations. By computing the density of states, the Z2 topological invariant using the Wilson loop method, and the surface electronic structure from slab calculations, we find that PuB4 is a nonmagnetic strong topological insulator with a band gap of 254 meV. Our magnetic susceptibility, heat capacity, and resistivity measurements are consistent with this analysis, albeit with a smaller gap of 35 meV. DFT plus dynamical mean-field theory calculations show that electronic correlations reduce the size of the band gap, and provide better agreement with the value determined by resistivity. These results demonstrate that PuB4 is a promising actinide material to investigate the interplay of electronic correlations and nontrivial topology.

Optically detecting the edge-state of a three-dimensional topological insulator under ambient conditions by ultrafast infrared photoluminescence spectroscopy

PubMed Central

Maezawa, Shun-ya; Watanabe, Hiroshi; Takeda, Masahiro; Kuroda, Kenta; Someya, Takashi; Matsuda, Iwao; Suemoto, Tohru

2015-01-01

Ultrafast infrared photoluminescence spectroscopy was applied to a three-dimensional topological insulator TlBiSe2 under ambient conditions. The dynamics of the luminescence exhibited bulk-insulating and gapless characteristics bounded by the bulk band gap energy. The existence of the topologically protected surface state and the picosecond-order relaxation time of the surface carriers, which was distinguishable from the bulk response, were observed. Our results provide a practical method applicable to topological insulators under ambient conditions for device applications. PMID:26552784

Pb{sub 5}Bi{sub 24}Se{sub 41}: A new member of the homologous series forming topological insulator heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Segawa, Kouji; Taskin, A.A.; Ando, Yoichi, E-mail: y_ando@sanken.osa-u.ac.jp

2015-01-15

We have synthesized Pb{sub 5}Bi{sub 24}Se{sub 41}, which is a new member of the (PbSe){sub 5}(Bi{sub 2}Se{sub 3}){sub 3m} homologous series with m=4. This series of compounds consist of alternating layers of the topological insulator Bi{sub 2}Se{sub 3} and the ordinary insulator PbSe. Such a naturally-formed heterostructure has recently been elucidated to give rise to peculiar quasi-two-dimensional topological states throughout the bulk, and the discovery of Pb{sub 5}Bi{sub 24}Se{sub 41} expands the tunability of the topological states in this interesting homologous series. The trend in the resistivity anisotropy in this homologous series suggests an important role of hybridization of themore » topological states in the out-of-plane transport. - Graphical abstract: X-ray diffraction profiles taken on cleaved surfaces of single-crystal samples of the (PbSe){sub 5}(Bi{sub 2}Se{sub 3}){sub 3m} homologous series with various m values up to 4, which realizes topological insulator heterostructures. Schematic crystal structure of the new phase, m=4, is also shown. - Highlights: • We have synthesized a new member of the homologous series related to topological insulators. • In this compound, a heterostructure of topological and ordinary insulators naturally forms. • Resistivity anisotropy suggests an important role of hybridization of the topological states. • This compound expands the tunability of the topological states via chemical means.« less

Quantum anomalous Hall effect in magnetic topological insulators

DOE PAGES

Wang, Jing; Lian, Biao; Zhang, Shou -Cheng

2015-08-25

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Here, we give a theoretical introduction to the quantum anomalous Hall (QAH) effect based on magnetic topological insulators in two-dimensions (2D) and three-dimensions (3D). In 2D topological insulators, magnetic order breaks the symmetry between the counter-propagating helical edge states, and as a result, the quantum spin Hall effect can evolve into the QAH effect. In 3D, magnetic order opens up a gap for the topological surface states, and chiral edge state has been predicted to exist on the magnetic domain walls. We presentmore » the phase diagram in thin films of a magnetic topological insulator and review the basic mechanism of ferromagnetic order in magnetically doped topological insulators. We also review the recent experimental observation of the QAH effect. Furthermore, we discuss more recent theoretical work on the coexistence of the helical and chiral edge states, multi-channel chiral edge states, the theory of the plateau transition, and the thickness dependence in the QAH effect.« less

Topological Triplon Modes and Bound States in a Shastry-Sutherland Magnet

NASA Astrophysics Data System (ADS)

McClarty, Paul; Kruger, Frank; Guidi, Tatiana; Parker, Stewart; Refson, Keith; Parker, Tony; Prabhakaran, Dharmalingam; Coldea, Radu

The twin discoveries of the quantum Hall effect, in the 1980's, and of topoogical band insulators, in the 2000's, were landmarks in physics that enriched our view of the electronic properties of solids. In a nutshell, these discoveries have taught us that quantum mechanical wavefunctions in crystalline solids may carry nontrivial topological invariants which have ramifications for the observable physics. One of the side effects of the recent topological insulator revolution has been that such physics is much more widespread than was appreciated ten years ago. For example, while topological insulators were originally studied in the context of electron wavefunctions, recent work has led to proposals of topological insulators in bosonic systems: in photonic crystals, in the vibrational modes of crystals, and in the excitations of ordered magnets. Using inelastic neutron scattering along with theoretical calculations we demonstrate that, in a weak magnetic field, the dimerized quantum magnet SrCu2(BO3)2 is a bosonic topological insulator with nonzero Chern number in the triplon bands and topologically protected chiral edge excitations.

BaSn 2 : A wide-gap strong topological insulator

DOE PAGES

Young, Steve M.; Manni, S.; Shao, Junping; ...

2017-02-15

BaSn 2 has been shown to form as layers of buckled stanene intercalated by barium ions. However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn 2 has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide families, it would represent a unique manifestation of the topological insulating phase. Here in this paper, we present a detailed investigation of BaSn 2, using both ab initio and experimental methods. First-principles calculations demonstrate that this overlooked material is indeed a strong, wide-gapmore » topological insulator with a bulk band gap of 200 meV. We characterize the surface state dependence on termination chemistry, providing guidance for experimental efforts to measure and manipulate its topological properties. Additionally, through ab initio modeling and synthesis experiments, we explore the stability and accessibility of this phase, revealing a complicated phase diagram that indicates a challenging path to obtaining single crystals.« less

Differentiation of surface and bulk conductivities in topological insulator via four-probe spectroscopy

DOE PAGES

Zhang, Xiaoguang; McGuire, Michael A.; Chen, Yong P.; ...

2016-03-08

Topological insulators, with characteristic topological surface states, have emerged as a new state of matter with rich potentials for both fundamental physics and device applications. However, the experimental detection of the surface transport has been hampered by the unavoidable extrinsic conductivity associated with the bulk crystals. Here we show that a four-probe transport spectroscopy in a multi-probe scanning tunneling microscopy system can be used to differentiate conductivities from the surface states and the coexisting bulk states in topological insulators. We derive a scaling relation of measured resistance with respect to varying inter-probe spacing for two interconnected conduction channels, which allowsmore » quantitative determination of conductivities from both channels. Using this method, we demonstrate the separation of 2D and 3D conduction in topological insulators by comparing the conductance scaling of Bi 2Se 3, Bi 2Te 2Se, and Sb-doped Bi 2Se 3 with that of a pure 2D conductance of graphene on SiC substrate. We also report the 2D conductance enhancement due to the surface doping effect in topological insulators. This technique can be applied to reveal 2D to 3D crossover of conductance in other complex systems.« less

Tuning thermoelectricity in a Bi 2Se 3 topological insulator via varied film thickness

DOE PAGES

Guo, Minghua; Wang, Zhenyu; Xu, Yong; ...

2016-01-12

We report thermoelectric transport studies on Bi 2Se 3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi 2Se 3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

Strongly Correlated Topological Insulators

DTIC Science & Technology

2016-02-03

Strongly Correlated Topological Insulators In the past year, the grant was used for work in the field of topological phases, with emphasis on finding...surface of topological insulators . In the past 3 years, we have started a new direction, that of fractional topological insulators . These are materials...Strongly Correlated Topological Insulators Report Title In the past year, the grant was used for work in the field of topological phases, with emphasis

Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

DOE PAGES

Li, Jin; He, Chaoyu; Meng, Lijun; ...

2015-09-14

Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

Two-dimensional topological superconducting phases emerged from d-wave superconductors in proximity to antiferromagnets

NASA Astrophysics Data System (ADS)

Zhu, Guo-Yi; Wang, Ziqiang; Zhang, Guang-Ming

2017-05-01

Motivated by the recent observations of nodeless superconductivity in the monolayer CuO2 grown on the Bi2Sr2CaCu2O8+δ substrates, we study the two-dimensional superconducting (SC) phases described by the two-dimensional t\\text-J model in proximity to an antiferromagnetic (AF) insulator. We found that i) the nodal d-wave SC state can be driven via a continuous transition into a nodeless d-wave pairing state by the proximity-induced AF field. ii) The energetically favorable pairing states in the strong field regime have extended s-wave symmetry and can be nodal or nodeless. iii) Between the pure d-wave and s-wave paired phases, there emerge two topologically distinct SC phases with (s+\\text{i}d) symmetry, i.e., the weak and strong pairing phases, and the weak pairing phase is found to be a Z 2 topological superconductor protected by valley symmetry, exhibiting robust gapless nonchiral edge modes. These findings strongly suggest that the high-T c superconductors in proximity to antiferromagnets can realize fully gapped symmetry-protected topological SC.

Two-Dimensional Large Gap Topological Insulators with Tunable Rashba Spin-Orbit Coupling in Group-IV films

PubMed Central

Zhang, Shou-juan; Ji, Wei-xiao; Zhang, Chang-wen; Li, Ping; Wang, Pei-ji

2017-01-01

The coexistence of nontrivial topology and giant Rashba splitting, however, has rare been observed in two-dimensional (2D) films, limiting severely its potential applications at room temperature. Here, we through first-principles calculations to propose a series of inversion-asymmetric group-IV films, ABZ2 (A ≠ B = Si, Ge, Sn, Pb; Z = F, Cl, Br), whose stability are confirmed by phonon spectrum calculations. The analyses of electronic structures reveal that they are intrinsic 2D TIs with a bulk gap as large as 0.74 eV, except for GeSiF2, SnSiCl2, GeSiCl2 and GeSiBr2 monolayers which can transform from normal to topological phases under appropriate tensile strain of 4, 4, 5, and 4%, respectively. The nontrivial topology is identified by Z2 topological invariant together with helical edge states, as well as the berry curvature of these systems. Another prominent intriguing feature is the giant Rashba spin splitting with a magnitude reaching 0.15 eV, the largest value reported in 2D films so far. The tunability of Rashba SOC and band topology can be realized through achievable compressive/tensile strains (−4 ~ 6%). Also, the BaTe semiconductor is an ideal substrate for growing ABZ2 films without destroying their nontrivial topology. PMID:28368035

Topological-insulator-based terahertz modulator

DOE PAGES

Wang, X. B.; Cheng, L.; Wu, Y.; ...

2017-10-18

Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi 1:5Sb 0:5Te 1:8Se 1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applyingmore » a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.« less

Topological-insulator-based terahertz modulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X. B.; Cheng, L.; Wu, Y.

Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi 1:5Sb 0:5Te 1:8Se 1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applyingmore » a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.« less

Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene

PubMed Central

Wang, Ya-ping; Ji, Wei-xiao; Zhang, Chang-wen; Li, Ping; Li, Feng; Ren, Miao-juan; Chen, Xin-Lian; Yuan, Min; Wang, Pei-ji

2016-01-01

Discovery of two-dimensional (2D) topological insulator such as group-V films initiates challenges in exploring exotic quantum states in low dimensions. Here, we perform first-principles calculations to study the geometric and electronic properties in 2D arsenene monolayer with hydrogenation (HAsH). We predict a new σ-type Dirac cone related to the px,y orbitals of As atoms in HAsH, dependent on in-plane tensile strain. Noticeably, the spin-orbit coupling (SOC) opens a quantum spin Hall (QSH) gap of 193 meV at the Dirac cone. A single pair of topologically protected helical edge states is established for the edges, and its QSH phase is confirmed with topological invariant Z2 = 1. We also propose a 2D quantum well (QW) encapsulating HAsH with the h-BN sheet on each side, which harbors a nontrivial QSH state with the Dirac cone lying within the band gap of cladding BN substrate. These findings provide a promising innovative platform for QSH device design and fabrication operating at room temperature. PMID:26839209

Controllable band structure and topological phase transition in two-dimensional hydrogenated arsenene

NASA Astrophysics Data System (ADS)

Wang, Ya-Ping; Ji, Wei-Xiao; Zhang, Chang-Wen; Li, Ping; Li, Feng; Ren, Miao-Juan; Chen, Xin-Lian; Yuan, Min; Wang, Pei-Ji

2016-02-01

Discovery of two-dimensional (2D) topological insulator such as group-V films initiates challenges in exploring exotic quantum states in low dimensions. Here, we perform first-principles calculations to study the geometric and electronic properties in 2D arsenene monolayer with hydrogenation (HAsH). We predict a new σ-type Dirac cone related to the px,y orbitals of As atoms in HAsH, dependent on in-plane tensile strain. Noticeably, the spin-orbit coupling (SOC) opens a quantum spin Hall (QSH) gap of 193 meV at the Dirac cone. A single pair of topologically protected helical edge states is established for the edges, and its QSH phase is confirmed with topological invariant Z2 = 1. We also propose a 2D quantum well (QW) encapsulating HAsH with the h-BN sheet on each side, which harbors a nontrivial QSH state with the Dirac cone lying within the band gap of cladding BN substrate. These findings provide a promising innovative platform for QSH device design and fabrication operating at room temperature.

Superconductivity, Magnetoresistance, Magnetic Anomaly and Crystal Structure of New Phases of Topological Insulators Bi2Se3 and Sb2Te3

NASA Astrophysics Data System (ADS)

Kulbachinskii, V. A.; Buga, S. G.; Serebryanaya, N. R.; Perov, N. S.; Kytin, V. G.; Tarelkin, S. A.; Bagramov, R. H.; Eliseev, N. N.; Blank, V. D.

2018-03-01

We synthesized a new metastable phase of Bi2Se3 topological insulator by a rapid quenching after a high-pressure-high-temperature treatment at P≈7.7 GPa; 673

Gigantic Surface Lifetime of an Intrinsic Topological Insulator

DOE PAGES

Neupane, Madhab; Xu, Su-Yang; Ishida, Yukiaki; ...

2015-09-09

We report that the interaction between light and novel two-dimensional electronic states holds promise to realize new fundamental physics and optical devices. Here, we use pump-probe photoemission spectroscopy to study the optically excited Dirac surface states in the bulk-insulating topological insulator Bi 2Te 2Se and reveal optical properties that are in sharp contrast to those of bulk-metallic topological insulators. We observe a gigantic optical lifetime exceeding 4 μs (1 μs=10 more » $${-}$$6 s) for the surface states in Bi 2Te 2Se, whereas the lifetime in most topological insulators, such as Bi2Se3, has been limited to a few picoseconds (1 ps=10 $${-}$$12 s). Moreover, we discover a surface photovoltage, a shift of the chemical potential of the Dirac surface states, as large as 100 mV. Lastly, our results demonstrate a rare platform to study charge excitation and relaxation in energy and momentum space in a two-dimensional system.« less

Gate-Variable Mid-Infrared Optical Transitions in a (Bi1-xSbx)2Te3 Topological Insulator.

PubMed

Whitney, William S; Brar, Victor W; Ou, Yunbo; Shao, Yinming; Davoyan, Artur R; Basov, D N; He, Ke; Xue, Qi-Kun; Atwater, Harry A

2017-01-11

We report mid-infrared spectroscopy measurements of ultrathin, electrostatically gated (Bi 1-x Sb x ) 2 Te 3 topological insulator films in which we observe several percent modulation of transmittance and reflectance as gating shifts the Fermi level. Infrared transmittance measurements of gated films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO 3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and 2D topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi 1-x Sb x ) 2 Te 3 and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable, ultrathin infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.

Influence of electronic band topology on phonon properties in Dirac materials

NASA Astrophysics Data System (ADS)

Garate, Ion; Saha, Kush; Légaré, Katherine

2015-03-01

In Dirac materials, the interaction between electrons and long-wavelength phonons has been shown to induce and stabilize topological insulation [1-2]. Here report on a theoretical study of the converse effect, namely the influence of band topology on phonon properties. We calculate how electron-phonon interactions change the bulk phonon dispersion as a function of pressure and temperature, in both trivial and topological phases. We find that (i) topological insulators are more prone to lattice instabilities than trivial insulators, and (ii) Raman and neutron scattering measurements can be used to determine the electronic band topology. Research funded by Canada's NSERC and Québec's RQMP.

Topological Quantum Information Processing Mediated Via Hybrid Topological Insulator Structures

DTIC Science & Technology

2013-11-13

manipulation, entanglement and detection ofMajorana fermions in diamond-topological insulator - superconductor heterojunctions. Furthennore, we propose to...the formation, manipulation, entanglement and detection of Majorana fermions in diamond-topological insulator - superconductor heterojunctions...Interactions between Superconductors and Topological Insulators Recent advances have revealed a new type of information processing, topological quantum

Connecting thermoelectric performance and topological-insulator behavior: Bi 2Te 3 and Bi 2Te 2Se from first principles

DOE PAGES

Shi, Hongliang; Parker, David S.; Du, Mao-Hua; ...

2015-01-20

Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi 2Te 2Se in relation to Bi 2Te 3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

Simple Z2 lattice gauge theories at finite fermion density

NASA Astrophysics Data System (ADS)

Prosko, Christian; Lee, Shu-Ping; Maciejko, Joseph

2017-11-01

Lattice gauge theories are a powerful language to theoretically describe a variety of strongly correlated systems, including frustrated magnets, high-Tc superconductors, and topological phases. However, in many cases gauge fields couple to gapless matter degrees of freedom, and such theories become notoriously difficult to analyze quantitatively. In this paper we study several examples of Z2 lattice gauge theories with gapless fermions at finite density, in one and two spatial dimensions, that are either exactly soluble or whose solution reduces to that of a known problem. We consider complex fermions (spinless and spinful) as well as Majorana fermions and study both theories where Gauss' law is strictly imposed and those where all background charge sectors are kept in the physical Hilbert space. We use a combination of duality mappings and the Z2 slave-spin representation to map our gauge theories to models of gauge-invariant fermions that are either free, or with on-site interactions of the Hubbard or Falicov-Kimball type that are amenable to further analysis. In 1D, the phase diagrams of these theories include free-fermion metals, insulators, and superconductors, Luttinger liquids, and correlated insulators. In 2D, we find a variety of gapped and gapless phases, the latter including uniform and spatially modulated flux phases featuring emergent Dirac fermions, some violating Luttinger's theorem.

Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators

PubMed Central

Battiato, Marco; Sánchez-Barriga, Jaime

2017-01-01

Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin–orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized GW+Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron–electron and electron–phonon scatterings. Taking the prototypical insulator Bi2Te3 as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron–electron and electron–phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials. PMID:28773171

Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators.

PubMed

Battiato, Marco; Aguilera, Irene; Sánchez-Barriga, Jaime

2017-07-17

Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin-orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized G W +Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron-electron and electron-phonon scatterings. Taking the prototypical insulator Bi 2 Te 3 as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron-electron and electron-phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials.

Observation of Topological Links Associated with Hopf Insulators in a Solid-State Quantum Simulator

NASA Astrophysics Data System (ADS)

Yuan, X.-X.; He, L.; Wang, S.-T.; Deng, D.-L.; Wang, F.; Lian, W.-Q.; Wang, X.; Zhang, C.-H.; Zhang, H.-L.; Chang, X.-Y.; Duan, L.-M.

2017-06-01

Hopf insulators are intriguing three-dimensional topological insulators characterized by an integer topological invariant. They originate from the mathematical theory of Hopf fibration and epitomize the deep connection between knot theory and topological phases of matter, which distinguishes them from other classes of topological insulators. Here, we implement a model Hamiltonian for Hopf insulators in a solid-state quantum simulator and report the first experimental observation of their topological properties, including fascinating topological links associated with the Hopf fibration and the integer-valued topological invariant obtained from a direct tomographic measurement. Our observation of topological links and Hopf fibration in a quantum simulator opens the door to probe rich topological properties of Hopf insulators in experiments. The quantum simulation and probing methods are also applicable to the study of other intricate three-dimensional topological model Hamiltonians.

Transport Experiments on Topological Insulators

DTIC Science & Technology

2016-08-16

neutral currents as well. In insulating magnets, the heat current below 2 K is largely carried by spin waves or magnons (phonons die out rapidly below 2 K...Ong’s group recently showed that  leads to prominent effects on neutral currents as well. In insulating magnets, the heat current below 2 K is...UU UU UU 16-08-2016 15-Sep-2011 14-Oct-2014 Final Report: Transport Experiments on Topological Insulators The views, opinions and/or findings contained

Tailoring topological states in silicene using different halogen-passivated Si(111) substrates

NASA Astrophysics Data System (ADS)

Derakhshan, Vahid; Moghaddam, Ali G.; Ceresoli, Davide

2018-03-01

We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface using density functional theory calculations. Our results show that the Dirac character of low-energy excitations in silicene is almost preserved in the presence of a silicon substrate passivated by various halogens. Nevertheless, the combined effects of symmetry breaking due to both direct and van der Waals interactions between silicene and the substrate, charge transfer from suspended silicene into the substrate, and, finally, the hybridization which leads to the charge redistribution result in a gap in the spectrum of the embedded silicene. We further take the spin-orbit interaction into account and obtain the resulting modification in the gap. The energy gaps with and without spin-orbit coupling vary significantly when different halogen atoms are used for the passivation of the Si surface, and for the case of iodine, they become on the order of 100 meV. To examine the topological properties, we calculate the projected band structure of silicene from which the Berry curvature and Z2 invariant based on the evolution of Wannier charge centers are obtained. As a key finding, it is shown that silicene on halogenated Si substrates has a topological insulating state which can survive even at room temperature for the substrates with iodine and bromine at the surface. Therefore, these results suggest that we can have a reliable, stable, and robust silicene-based two-dimensional topological insulator using the considered substrates.

Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

DTIC Science & Technology

2016-09-01

confirm that the thin layers of α-Sn are slightly strained, which supports theoretical prediction that α-Sn is a 3-D topological insulator (TI...topological insulator , single crystal 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT UU 18. NUMBER OF...its thickness, α-Sn is a 3-D or 2-D topological insulator (TI). Three-dimensional TIs are electronic materials that have a bulk bandgap and

Topological BF field theory description of topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Gil Young; Moore, Joel E., E-mail: jemoore@berkeley.edu; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720

2011-06-15

Research Highlights: > We show that a BF theory is the effective theory of 2D and 3D topological insulators. > The non-gauge-invariance of the bulk theory yields surface terms for a bosonized Dirac fermion. > The 'axion' term in electromagnetism is correctly obtained from gapped surfaces. > Generalizations to possible fractional phases are discussed in closing. - Abstract: Topological phases of matter are described universally by topological field theories in the same way that symmetry-breaking phases of matter are described by Landau-Ginzburg field theories. We propose that topological insulators in two and three dimensions are described by a version ofmore » abelian BF theory. For the two-dimensional topological insulator or quantum spin Hall state, this description is essentially equivalent to a pair of Chern-Simons theories, consistent with the realization of this phase as paired integer quantum Hall effect states. The BF description can be motivated from the local excitations produced when a {pi} flux is threaded through this state. For the three-dimensional topological insulator, the BF description is less obvious but quite versatile: it contains a gapless surface Dirac fermion when time-reversal-symmetry is preserved and yields 'axion electrodynamics', i.e., an electromagnetic E . B term, when time-reversal symmetry is broken and the surfaces are gapped. Just as changing the coefficients and charges of 2D Chern-Simons theory allows one to obtain fractional quantum Hall states starting from integer states, BF theory could also describe (at a macroscopic level) fractional 3D topological insulators with fractional statistics of point-like and line-like objects.« less

Phase transition studies of Na3Bi system under uniaxial strain

NASA Astrophysics Data System (ADS)

Nie, Tiaoping; Meng, Lijun; Li, Yanru; Luan, Yanhua; Yu, Jun

2018-03-01

We investigated the electronic properties and phase transitions of Na3Bi in four structural phases (space groups P63/mmc, P \\overline{3} c1, Fm \\overline{3} m and Cmcm) under constant-volume uniaxial strain using the first-principles method. For P63/mmc and P \\overline{3} c1-Na3Bi, an important phase transition from a topological Dirac semimetal (TDS) to a topological insulator appears under compression strain around 4.5%. The insulating gap increases with the increasing compressive strain and up to around 0.1 eV at a strain of 10%. However, both P63/mmc and P \\overline{3} c1-Na3Bi still keep the properties of a TDS within a tensile strain of 0-10%, although the Dirac points move away from the Γ point along Γ-A in reciprocal space as the tensile strain increases. The Na3Bi with space group Fm \\overline{3} m is identified as a topological semimetal with the inverted bands between Na-3s and Bi-6p and a parabolic dispersion in the vicinity of Γ point. Interestingly, for Fm \\overline{3} m-Na3Bi, both compression and tensile strain lead to a TDS which is identified by calculating surface Fermi arcs and topological invariants at time-reversal planes (k z   =  0 and k z   =  π/c) in reciprocal space. Additionally, we confirmed the high pressure phase Cmcm-Na3Bi is an ordinary insulator with a gap of about 0.62 eV. It is noteworthy that its gap almost keeps constant around 0.60 eV within a compression strain of 0-10%. In contrast, a remarkable phase transition from an insulator to a metal phase appears under tensile strain. Moreover, this phase transition is highly sensitive to tensile strain and takes place only at a strain 1.0%. These strain-induced electronic structures and phase transitions of the Na3Bi system in various phases are important due to their possible applications under high pressure in future electronic devices.

Uncertainty relations and topological-band insulator transitions in 2D gapped Dirac materials

NASA Astrophysics Data System (ADS)

Romera, E.; Calixto, M.

2015-05-01

Uncertainty relations are studied for a characterization of topological-band insulator transitions in 2D gapped Dirac materials isostructural with graphene. We show that the relative or Kullback-Leibler entropy in position and momentum spaces, and the standard variance-based uncertainty relation give sharp signatures of topological phase transitions in these systems.

Coexistence of metallic and insulating channels in compressed YbB6

NASA Astrophysics Data System (ADS)

Ying, Jianjun; Tang, Lingyun; Chen, Fei; Chen, Xianhui; Struzhkin, Viktor V.

2018-03-01

It remains controversial whether compressed YbB6 material is a topological insulator or a Kondo topological insulator. We performed high-pressure transport, x-ray diffraction (XRD), x-ray absorption spectroscopy, and Raman-scattering measurements on YbB6 samples in search for its topological Kondo phase. Both high-pressure powder XRD and Raman measurements show no trace of structural phase transitions in YbB6 up to 50 GPa. The nonmagnetic Yb2 + gradually change to magnetic Yb3 + above 18 GPa concomitantly with the increase in resistivity. However, the transition to the insulating state occurs only around 30 GPa, accompanied by the increase in the shear stress, and anomalies in the pressure dependence of the Raman T2 g mode and in the B atomic position. The resistivity at high pressures can be described by a model taking into account coexisting insulating and metallic channels with the activation energy for the insulating channel about 30 meV. We argue that YbB6 may become a topological Kondo insulator at high pressures above 35 GPa.

Tetradymites as thermoelectrics and topological insulators

NASA Astrophysics Data System (ADS)

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

2017-10-01

Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

Optoelectronic devices, plasmonics, and photonics with topological insulators

NASA Astrophysics Data System (ADS)

Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

2017-03-01

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

Observation of ultrahigh mobility surface states in a topological crystalline insulator by infrared spectroscopy

DOE PAGES

Wang, Ying; Luo, Guoyu; Liu, Junwei; ...

2017-08-28

Topological crystalline insulators possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here, we report infrared reflectance measurements of a topological crystalline insulator, (001)-oriented Pb 1-xSn xSe in zero and high magnetic fields. We demonstrate that the far-infrared conductivity is unexpectedly dominated by the surface states as a result of their unique band structure and the consequent small infrared penetration depth.more » Moreover, our experiments yield a surface mobility of 40,000 cm 2 V -1 s -1, which is one of the highest reported values in topological materials, suggesting the viability of surface-dominated conduction in thin topological crystalline insulator crystals. These findings pave the way for exploring many exotic transport and optical phenomena and applications predicted for topological crystalline insulators.« less

Observation of ultrahigh mobility surface states in a topological crystalline insulator by infrared spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ying; Luo, Guoyu; Liu, Junwei

Topological crystalline insulators possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here, we report infrared reflectance measurements of a topological crystalline insulator, (001)-oriented Pb 1-xSn xSe in zero and high magnetic fields. We demonstrate that the far-infrared conductivity is unexpectedly dominated by the surface states as a result of their unique band structure and the consequent small infrared penetration depth.more » Moreover, our experiments yield a surface mobility of 40,000 cm 2 V -1 s -1, which is one of the highest reported values in topological materials, suggesting the viability of surface-dominated conduction in thin topological crystalline insulator crystals. These findings pave the way for exploring many exotic transport and optical phenomena and applications predicted for topological crystalline insulators.« less

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

The topological Anderson insulator phase in the Kane-Mele model

NASA Astrophysics Data System (ADS)

Orth, Christoph P.; Sekera, Tibor; Bruder, Christoph; Schmidt, Thomas L.

2016-04-01

It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase.

Relativistic Fermions Generated by Square Lattices in Layered Compounds

NASA Astrophysics Data System (ADS)

Mao, Zhiqiang

Recent discoveries of topological semimetals have generated immense interests since they represent new topological states of quantum matters. In this talk, I will present our recent studies on topological semimetals, which are focused on Dirac/Weyl fermions generated by square lattices in layered compounds. I will first report on our discoveries of two new Dirac materials Sr1-yMn1-zSb2 and BaMnSb2 in which nearly massless Dirac fermions are generated by 2D Sb layers. In Sr1-yMn1-zSb2, Dirac fermions are found to coexist with ferromagnetism, offering a rare opportunity to investigate the interplay between relativistic fermions and spontaneous time reversal symmetry breaking and explore a possible magnetic Weyl state. Then I will show our quantum oscillation studies on two new Dirac nodal line semimetals - ZrSiSe and ZrSiTe. We have not only revealed their signatures of nodal-line fermions, but also demonstrated that their atomically thin crystals are accessible via mechanical exfoliation, raising the possibility of realizing the theoretically predicted 2D topological insulators. Finally I will discuss exotic quantum transport behavior arising from the zeroth Landau level in Weyl semimetal YbMnBi2. This work is supported by the U.S. DOE under Grant No. DE-SC0014208 (support for the work on ZrSiSe and ZrSiTe) and DOE-EPSCoR Grant No. DE-SC0012432 with additional support from the Louisiana BoR (support for the work on (Sr/Ba)MnSb2 and YbMnBi2).

Topological Quantum Information Processing Mediated Via Hybrid Topogical Insulator Structures

DTIC Science & Technology

2014-03-28

formation, manipulation, entanglement and detection of Majorana fermions in diamond-topological insulator - superconductor heterojunctions. Furthermore...between Superconductors and Topological Insulators Recent advances have revealed a new type of information processing, topological quantum...Topological Insulator - Superconductor Heterostructures," Physical Review B 84, 144507 (2011). 7 Hsiang-Hsuan Hung, Pouyan Ghaemi, Taylor L

Enhanced photovoltage on the surface of topological insulator via optical aging

NASA Astrophysics Data System (ADS)

Yoshikawa, Tomoki; Ishida, Yukiaki; Sumida, Kazuki; Chen, Jiahua; Kokh, Konstantin A.; Tereshchenko, Oleg E.; Shin, Shik; Kimura, Akio

2018-05-01

The efficient generation of spin-polarized current is one of the keys to realizing spintronic devices with a low power consumption. Topological insulators are strong candidates for this purpose. A surface photovoltaic effect can be utilized on the surface of a topological insulator, where a surface spin-polarized current can flow upon illumination. Here, we used time- and angle-resolved photoelectron spectroscopy on the surface of Bi2Te3 to demonstrate that the magnitude of the surface photovoltage is almost doubled in optically aged samples, i.e., samples whose surface has been exposed to intense infrared light illumination. Our findings pave the way for optical control of the spin-polarized current by utilizing topological insulators.

Topological Photonics for Continuous Media

NASA Astrophysics Data System (ADS)

Silveirinha, Mario

Photonic crystals have revolutionized light-based technologies during the last three decades. Notably, it was recently discovered that the light propagation in photonic crystals may depend on some topological characteristics determined by the manner how the light states are mutually entangled. The usual topological classification of photonic crystals explores the fact that these structures are periodic. The periodicity is essential to ensure that the underlying wave vector space is a closed surface with no boundary. In this talk, we prove that it is possible calculate Chern invariants for a wide class of continuous bianisotropic electromagnetic media with no intrinsic periodicity. The nontrivial topology of the relevant continuous materials is linked with the emergence of edge states. Moreover, we will demonstrate that continuous photonic media with the time-reversal symmetry can be topologically characterized by a Z2 integer. This novel classification extends for the first time the theory of electronic topological insulators to a wide range of photonic platforms, and is expected to have an impact in the design of novel photonic systems that enable a topologically protected transport of optical energy. This work is supported in part by Fundacao para a Ciencia e a Tecnologia Grant Number PTDC/EEI-TEL/4543/2014.

Ion beam modification of topological insulator bismuth selenide

DOE PAGES

Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; ...

2014-12-17

In this study, we demonstrate chemical doping of a topological insulator Bi 2Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2Se 3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allowmore » better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.« less

Tunable inverse topological heterostructure utilizing ( B i 1 - x I n x ) 2 S e 3 and multichannel weak-antilocalization effect

DOE PAGES

Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; ...

2016-03-10

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi 1-xIn x) 2Se 3 in between two layers of the TI Bi 2Se 3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary themore » thickness and the composition of the (Bi 1-xIn x) 2Se 3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiaoguang; McGuire, Michael A.; Chen, Yong P.

Topological insulators, with characteristic topological surface states, have emerged as a new state of matter with rich potentials for both fundamental physics and device applications. However, the experimental detection of the surface transport has been hampered by the unavoidable extrinsic conductivity associated with the bulk crystals. Here we show that a four-probe transport spectroscopy in a multi-probe scanning tunneling microscopy system can be used to differentiate conductivities from the surface states and the coexisting bulk states in topological insulators. We derive a scaling relation of measured resistance with respect to varying inter-probe spacing for two interconnected conduction channels, which allowsmore » quantitative determination of conductivities from both channels. Using this method, we demonstrate the separation of 2D and 3D conduction in topological insulators by comparing the conductance scaling of Bi 2Se 3, Bi 2Te 2Se, and Sb-doped Bi 2Se 3 with that of a pure 2D conductance of graphene on SiC substrate. We also report the 2D conductance enhancement due to the surface doping effect in topological insulators. This technique can be applied to reveal 2D to 3D crossover of conductance in other complex systems.« less

Intrinsic optical conductivity of a {{\\rm{C}}}_{2v} symmetric topological insulator

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Matsubara, Masahiko; Bellotti, Enrico; Shi, Junxia

2017-07-01

In this work we analytically investigate the longitudinal optical conductivity of the {{{C}}}2v symmetric topological insulator. The conductivity expressions at T = 0 are derived using the Kubo formula and expressed as a function of the ratio of the Dresselhaus and Rashba parameters that characterize the low-energy Hamiltonian. We find that the longitudinal inter-band conductivity vanishes when Dresselhaus and Rashba parameters are equal in strength, also called the persistent spin helix state. The calculations are extended to obtain the frequency-dependent real and imaginary components of the optical conductivity for the topological Kondo insulator SmB6 which exhibits {{{C}}}2v symmetric and anisotropic Dirac cones hosting topological states at \\overline{X} point on the surface Brillouin zone.

Foreward for special issue of philosophical magazine on: topological correlated insulators and SmB6

NASA Astrophysics Data System (ADS)

Allen, J. W.

2016-11-01

This Foreward briefly surveys the recent burst of research on the mixed valent insulator SmB6 in the context of two questions, (1) is SmB6 in fact the first example of a strongly correlated topological insulator, and (2) if so are there unique features of special interest for both topology and strong correlations? Accordingly, the papers of this special issue are situated within this general rubric.

Prediction, synthesis and characterization of new topological materials

NASA Astrophysics Data System (ADS)

Gibson, Quinn Davis

Over the past few years, a rediscovery of the concept of topology as it applies to the electronic structure of materials has created an explosion of research and discovery of new materials properties. While this field has been mainly of interest to the condensed matter physics community, this work explores it from a materials chemistry perspective, to both develop new materials, via a combination of computation, synthesis and measurement, to understand how the electronic topology can relate to structure and bonding. As such, adding chemical complexity to existing topological materials has been a focus of this study. In order to expand upon the archetypal topological insulator family of Bi2X3 (X=Se,Te), the super lattice materials, which contain alternating layers of Bi2 or Sb2 and Bi 2X3 or Sb2Te3, were investigated, revealing novel properties. The compound Bi4Se3 was shown to have termination dependent surface states, revealing a relationship between the nature of the surface states and the chemical nature of the surface, as well as novel mirror symmetry protected surface states. The 2:1 family (in the Sb2Te structure) were shown to be new topological insulators, with a novel Sb/Bi ordering when Bi is substituted for Sb in Sb2Te. Finally the 1:1 family was shown to, unexpectedly, be strong topological insulators, despite the theoretical prediction that they are weak topological insulators. Furthermore, other materials families were investigated as topological insulators, such as the chimney ladder family. Ir4Ge5 is identified as a likely candidate, and Ru2Sn3 was shown to have novel, quasi one-dimensional surface states. The exact reason for the existence of these states is not known and is under investigation. Finally, possible 3D Dirac and Weyl semi-metals were investigated. A set of rules to predict 3D Dirac semi-metals were developed, and Cd3 As2 was experimentally verified as the first of this kind of material. Studies towards Weyl semi-metals involved the investigation of CaMn2Bi2 and YbMnBi2, leading to the identification of CaMn2Bi2 as an antiferromagnetic hybridization gap insulator and YbMnBi2 as a possible time reversal symmetry breaking Weyl Semi-metal.

Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states

DOE PAGES

Jiang, Zilong; Chang, Cui -Zu; Masir, Massoud Ramezani; ...

2016-05-04

Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect (SSE), that is, measuring the transverse thermoelectric response to a temperature gradient across a thin film of yttrium iron garnet, an insulating ferrimagnet, and forming a heterojunction with (Bi xSb 1–x) 2Te 3, a topological insulator. The non-equilibrium magnon population established at the interface can decay in part by interactions of magnons with electrons near the Fermi energy of the topological insulator. When this decay channel is made active by tuning (Bi xSbmore » 1–x) 2Te 3 into a bulk insulator, a large electromotive force emerges in the direction perpendicular to the in-plane magnetization of yttrium iron garnet. Lastly, the enhanced, tunable SSE which occurs when the Fermi level lies in the bulk gap offers unique advantages over the usual SSE in metals and therefore opens up exciting possibilities in spintronics.« less

Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3

PubMed Central

Braun, Lukas; Mussler, Gregor; Hruban, Andrzej; Konczykowski, Marcin; Schumann, Thomas; Wolf, Martin; Münzenberg, Markus; Perfetti, Luca; Kampfrath, Tobias

2016-01-01

Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs). Here, we excite and measure photocurrents in the model topological insulator Bi2Se3 with a time resolution of 20 fs by sampling the concomitantly emitted broadband terahertz (THz) electromagnetic field from 0.3 to 40 THz. Strikingly, the surface current response is dominated by an ultrafast charge transfer along the Se–Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to be orders of magnitude smaller than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are of direct relevance for broadband optoelectronic devices based on topological-insulator surface currents. PMID:27796297

Sn-doped Bi 1.1Sb 0.9Te 2S bulk crystal topological insulator with excellent properties

DOE PAGES

S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

2016-04-27

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method.more » We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

Odd-frequency superconductivity induced in topological insulators with and without hexagonal warping.

PubMed

Vasenko, A S; Golubov, A A; Silkin, V M; Chulkov, E V

2017-07-26

We study the effect of the Fermi surface anisotropy on the odd-frequency spin-triplet pairing component of the induced pair potential. We consider a superconductor/ ferromagnetic insulator (S/FI) hybrid structure formed on the 3D topological insulator (TI) surface. In this case three ingredients ensure the possibility of the odd-frequency pairing: (1) the topological surface states, (2) the induced pair potential, and (3) the magnetic moment of a nearby ferromagnetic insulator. We take into account the strong anisotropy of the Dirac point in topological insulators when the chemical potential lies well above the Dirac cone and its constant energy contour has a snowflake shape. Within this model, we propose that the S/FI boundary should be properly aligned with respect to the snowflake constant energy contour to have an odd-frequency symmetry of the corresponding pairing component and to insure the Majorana bound state at the S/FI boundary. For arbitrary orientation of the boundary, the Majorana bound state is absent. This provides a selection rule to the realization of Majorana modes in S/FI hybrid structures, formed on the topological insulator surface.

Superconductivity and ferromagnetism in topological insulators

NASA Astrophysics Data System (ADS)

Zhang, Duming

Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to exist when topological insulators are interfaced with superconductors. The observation of Majorana fermions would not only be fundamentally important, but would also lead to applications in fault-tolerant topological quantum computation. By interfacing topological insulator nanoribbons with superconducting electrodes, we observe distinct signatures of proximity-induced superconductivity, which is found to be present in devices with channel lengths that are much longer than the normal transport characteristic lengths. This might suggest preferential coupling of the proximity effect to a ballistic surface channel of the topological insulator. In addition, when the electrodes are in the superconducting state, we observe periodic magnetoresistance oscillations which suggest the formation of vortices in the proximity-induced region of the nanoribbons. Our results demonstrate that proximity-induced superconductivity and vortices can be realized in our nanoribbon geometry, which accomplishes a first important step towards the search for Majorana fermions in condensed matter. In Chapter 5, I will discuss experiments on a magnetically-doped topological insulator (Mn-doped Bi2Se3) to induce a surface state gap. The metallic Dirac cone surface states of a topological insulator are expected to be protected against small perturbations by time-reversal symmetry. However, these surface states can be dramatically modified and a finite energy gap can be opened at the Dirac point by breaking the time-reversal symmetry via magnetic doping. The interplay between magnetism and topological surface states is predicted to yield novel phenomena of fundamental interest such as a topological magneto-electric effect, a quantized anomalous Hall effect, and the induction of magnetic monopoles. Our systematic measurements reveal a close correlation between the onset of ferromagnetism and quantum corrections to diffusive transport, which crosses over from the symplectic (weak anti-localization) to the unitary (weak localization) class. A comprehensive interpretation of data obtained from electrical transport, angle-resolved photoemission spectroscopy, superconducting quantum interference device magnetometry, and scanning tunneling microscopy indicates that the ferromagnetism responsible for modifications in the surface states occurs in nanoscale regions on the surface where magnetic atoms segregate during sample growth. This suggests that some aspects of the observed magnetoconductance may indeed originate from surface transport despite the non-ideal nature of the samples. These observations are consistent with the prediction of a time-reversal symmetry breaking gap, which is further supported by angle-resolved photoemission spectroscopy measurements.

Rényi entropies and topological quantum numbers in 2D gapped Dirac materials

NASA Astrophysics Data System (ADS)

Bolívar, Juan Carlos; Romera, Elvira

2017-05-01

New topological quantum numbers are introduced by analyzing complexity measures and relative Rényi entropies in silicene in the presence of perpendicular electric and magnetic fields. These topological quantum numbers characterize the topological insulator and band insulator phases in silicene. In addition, we have found that, these information measures reach extremum values at the charge neutrality points. These results are valid for other 2D gapped Dirac materials analogous to silicene with a buckled honeycomb structure and a significant spin-orbit coupling.

Ripple-modulated electronic structure of a 3D topological insulator.

PubMed

Okada, Yoshinori; Zhou, Wenwen; Walkup, D; Dhital, Chetan; Wilson, Stephen D; Madhavan, V

2012-01-01

Three-dimensional topological insulators host linearly dispersing states with unique properties and a strong potential for applications. An important ingredient in realizing some of the more exotic states in topological insulators is the ability to manipulate local electronic properties. Direct analogy to the Dirac material graphene suggests that a possible avenue for controlling local properties is via a controlled structural deformation such as the formation of ripples. However, the influence of such ripples on topological insulators is yet to be explored. Here we use scanning tunnelling microscopy to determine the effects of one-dimensional buckling on the electronic properties of Bi(2)Te(3.) By tracking spatial variations of the interference patterns generated by the Dirac electrons we show that buckling imposes a periodic potential, which locally modulates the surface-state dispersion. This suggests that forming one- and two-dimensional ripples is a viable method for creating nanoscale potential landscapes that can be used to control the properties of Dirac electrons in topological insulators.

Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study

NASA Astrophysics Data System (ADS)

Pan, Y.; Wu, D.; Angevaare, J. R.; Luigjes, H.; Frantzeskakis, E.; de Jong, N.; van Heumen, E.; Bay, T. V.; Zwartsenberg, B.; Huang, Y. K.; Snelder, M.; Brinkman, A.; Golden, M. S.; de Visser, A.

2014-12-01

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi1.46Sb0.54Te1.7Se1.3. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with α ≃ -1 as expected for transport dominated by topological surface states.

Scalable planar fabrication processes for chalcogenide-based topological insulators

NASA Astrophysics Data System (ADS)

Sharma, Peter; Henry, M. David; Douglas, Erica; Wiwi, Michael; Lima Sharma, Ana; Lewis, Rupert; Sugar, Joshua; Salehi, Maryam; Koirala, Nikesh; Oh, Seongshik

Surface currents in topological insulators are expected to have long spin diffusion lengths, which could lead to numerous applications. Experiments that show promising transport properties were conducted on exfoliated flakes from bulk material, thin films on substrates of limited dimensions, or bulk material, with limited yield. A planar thin film-based technology is needed to make topological insulator devices at scale and could also lead to new device designs. We address two problems related to fabricating chalcogenide-based topological insulator devices on 3'' wafers in the Sandia Microfabrication Facility using Bi2Te3 films. (2) Implantation damage and its subsequent mitigation through annealing is characterized. (2) The degradation in dielectric layers used to manipulate surface potential for elucidating topological surface state transport is characterized under different processing conditions. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. Funded by the Office of Naval Research (N0001416IP00098-0).

Magnetic gating of a 2D topological insulator

NASA Astrophysics Data System (ADS)

Dang, Xiaoqian; Burton, J. D.; Tsymbal, Evgeny Y.

2016-09-01

Deterministic control of transport properties through manipulation of spin states is one of the paradigms of spintronics. Topological insulators offer a new playground for exploring interesting spin-dependent phenomena. Here, we consider a ferromagnetic ‘gate’ representing a magnetic adatom coupled to the topologically protected edge state of a two-dimensional (2D) topological insulator to modulate the electron transmission of the edge state. Due to the locked spin and wave vector of the transport electrons the transmission across the magnetic gate depends on the mutual orientation of the adatom magnetic moment and the current. If the Fermi energy matches an exchange-split bound state of the adatom, the electron transmission can be blocked due to the full back scattering of the incident wave. This antiresonance behavior is controlled by the adatom magnetic moment orientation so that the transmission of the edge state can be changed from 1 to 0. Expanding this consideration to a ferromagnetic gate representing a 1D chain of atoms shows a possibility to control the spin-dependent current of a strip of a 2D topological insulator by magnetization orientation of the ferromagnetic gate.

Asymmetries in surface waves and reflection/transmission characteristics associated with topological insulators

NASA Astrophysics Data System (ADS)

Mackay, Tom G.; Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

2017-08-01

Three numerical studies were undertaken involving the interactions of plane waves with topological insulators. In each study, the topologically insulating surface states of the topological insulator were represented through a surface admittance. Canonical boundary-value problems were solved for the following cases: (i) Dyakonov surface-wave propagation guided by the planar interface of a columnar thin film and an isotropic dielectric topological insulator; (ii) Dyakonov-Tamm surface-wave propagation guided by the planar interface of a structurally chiral material and an isotropic dielectric topological insulator; and (iii) reflection and transmission due to the planar interface of a topologically insulating columnar thin film and vacuum. The nonzero surface admittance resulted in asymmetries in the wave speeds and decay constants of the surface waves in studies (i) and (ii). The nonzero surface admittance resulted in asymmetries in the reflectances and transmittances in study (iii).

Chemical potential fluctuations in topological insulator (Bi0.5Sb0.5)2Te3-films visualized by photocurrent spectroscopy

NASA Astrophysics Data System (ADS)

Kastl, Christoph; Seifert, Paul; He, Xiaoyue; Wu, Kehui; Li, Yongqing; Holleitner, Alexander

2015-06-01

We investigate the photocurrent properties of the topological insulator (Bi0.5Sb0.5)2Te3 on SrTiO3-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

Tunable multifunctional topological insulators in ternary Heusler and related compounds

NASA Astrophysics Data System (ADS)

Felser, Claudia

2011-03-01

Recently the quantum spin Hall effect was theoretically predicted and experimentally realized in quantum wells based on the binary semiconductor HgTe. The quantum spin Hall state and topological insulators are new states of quantum matter interesting for both fundamental condensed-matter physics and material science. Many Heusler compounds with C1b structure are ternary semiconductors that are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the bandgap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by the lattice parameter) and magnitude of spin--orbit coupling (by the atomic charge). Based on first-principle calculations we demonstrate that around 50 Heusler compounds show band inversion similar to that of HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantumwell structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth element Ln, which can realize additional properties ranging from superconductivity (for example LaPtBi) to magnetism (for example GdPtBi) and heavy fermion behaviour (for example YbPtBi). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors. Heusler compounds are similar to a stuffed diamond, correspondingly, it should be possible to find the ``high Z'' equivalent of graphene in a graphite-like structure with 18 valence electrons and with inverted bands. Indeed the ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. These materials have a gap at the Fermi energy and are therefore candidates for 3D-topological insulators. Additionally they are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.

First Principles Study on Topological-Phase Transition in Ferroelectric Oxides

NASA Astrophysics Data System (ADS)

Yamauchi, Kunihiko; Barone, Paolo; Picozzi, Silvia

Graphene is known as a 2D topological insulator with zero energy gap and Dirac cone. In this study, we theoretically designed a honeycomb structure of Au ions embedded in a ferroelectric host oxide, in order to exploit structural distortions to control topological properties. We show that the polar structural distortion induces the emergence of spin-valley coupling, together with a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The phase transition also affects the Berry curvature and spin-valley selection rules. Analogously to graphene, the microscopic origin of this topological phase is ascribed to a spin-valley-sublattice coupling, which arises from the interplay between trigonal crystal field and an ``effective'' spin-orbit interaction due to virtual excitations between eg and t2g states of transition-metal ions.

Thickness-dependent carrier and phonon dynamics of topological insulator Bi2Te3 thin films.

PubMed

Zhao, Jie; Xu, Zhongjie; Zang, Yunyi; Gong, Yan; Zheng, Xin; He, Ke; Cheng, Xiang'ai; Jiang, Tian

2017-06-26

As a new quantum state of matter, topological insulators offer a new platform for exploring new physics, giving rise to fascinating new phenomena and new devices. Lots of novel physical properties of topological insulators have been studied extensively and are attributed to the unique electron-phonon interactions at the surface. Although electron behavior in topological insulators has been studied in detail, electron-phonon interactions at the surface of topological insulators are less understood. In this work, using optical pump-optical probe technology, we performed transient absorbance measurement on Bi 2 Te 3 thin films to study the dynamics of its hot carrier relaxation process and coherent phonon behavior. The excitation and dynamics of phonon modes are observed with a response dependent on the thickness of the samples. The thickness-dependent characteristic time, amplitude and frequency of the damped oscillating signals are acquired by fitting the signal profiles. The results clearly indicate that the electron-hole recombination process gradually become dominant with the increasing thickness which is consistent with our theoretical calculation. In addition, a frequency modulation phenomenon on the high-frequency oscillation signals induced by coherent optical phonons is observed.

LDRD Report: Topological Design Optimization of Convolutes in Next Generation Pulsed Power Devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cyr, Eric C.; von Winckel, Gregory John; Kouri, Drew Philip

This LDRD project was developed around the ambitious goal of applying PDE-constrained opti- mization approaches to design Z-machine components whose performance is governed by elec- tromagnetic and plasma models. This report documents the results of this LDRD project. Our differentiating approach was to use topology optimization methods developed for structural design and extend them for application to electromagnetic systems pertinent to the Z-machine. To achieve this objective a suite of optimization algorithms were implemented in the ROL library part of the Trilinos framework. These methods were applied to standalone demonstration problems and the Drekar multi-physics research application. Out of thismore » exploration a new augmented Lagrangian approach to structural design problems was developed. We demonstrate that this approach has favorable mesh-independent performance. Both the final design and the algorithmic performance were independent of the size of the mesh. In addition, topology optimization formulations for the design of conducting networks were developed and demonstrated. Of note, this formulation was used to develop a design for the inner magnetically insulated transmission line on the Z-machine. The resulting electromagnetic device is compared with theoretically postulated designs.« less

University of Maryland MRSEC - Research: Seed 2

Science.gov Websites

Administration Committees Directory Research IRG 1 IRG 2 Seed 1 Seed 2 Seed 3 Highlights Publications Facilities MRSEC Templates Opportunities Search Home » Research » Seed 2 Seed 2: Synthesis and Exploration of Topological Insulators Figure 1 High quality single crystals of bismuth-based topological insulator grown at

Cloaking magnetic field and generating electric field with topological insulator and superconductor bi-layer sphere

NASA Astrophysics Data System (ADS)

Xu, Jin

2017-12-01

When an electric field is applied on a topological insulator, not only the electric field is generated, but also the magnetic field is generated, vice versa. I designed topological insulator and superconductor bi-layer magnetic cloak, derived the electric field and magnetic field inside and outside the topological insulator and superconductor sphere. Simulation and calculation results show that the applied magnetic field is screened by the topological insulator and superconductor bi-layer, and the electric field is generated in the cloaked region.

Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms

NASA Astrophysics Data System (ADS)

Nobukane, Hiroyoshi; Matsuyama, Toyoki; Tanda, Satoshi

2017-01-01

The quantum anomaly that breaks the symmetry, for example the parity and the chirality, in the quantization leads to a physical quantity with a topological Chern invariant. We report the observation of a Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms by employing electric transport. We observed the superconductor-to-insulator transition by reducing the thickness of Sr2RuO4 single crystals. The appearance of a gap structure in the insulating phase implies local superconductivity. Fractional quantized conductance was observed without an external magnetic field. We found an anomalous induced voltage with temperature and thickness dependence, and the induced voltage exhibited switching behavior when we applied a magnetic field. We suggest that there was fractional magnetic-field-induced electric polarization in the interlayer. These anomalous results are related to topological invariance. The fractional axion angle Θ = π/6 was determined by observing the topological magneto-electric effect in the Bose-insulating phase of Sr2RuO4 nanofilms.

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films

PubMed Central

2012-01-01

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement. PMID:23072433

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films.

PubMed

Fan, Zheyong; Zheng, Jiansen; Wang, Hui-Qiong; Zheng, Jin-Cheng

2012-10-16

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.

Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime

NASA Astrophysics Data System (ADS)

Liu, Huijun; Liang, Jinghua; Cheng, Long; Zhang, Jie; Zhang, Zhenyu

Using first-principles calculations and Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems. These findings help to establish intricate connections between the thermoelectric materials and topological insulators.

The Aharonov-Bohm oscillation in the BiSbTe3 topological insulator macroflake

NASA Astrophysics Data System (ADS)

Huang, Shiu-Ming; Wang, Pin-Chun; Lin, Chien; You, Sheng-Yu; Lin, Wei-Cheng; Lin, Lin-Jie; Yan, You-Jhih; Yu, Shih-Hsun; Chou, M. C.

2018-05-01

We report the Aharonov-Bohm (AB) oscillation in the BiSbTe3 topological insulator macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index number reveals the Berry phase is π which supports the oscillation originates from the surface state. The AB oscillation frequency increases as temperature decreases, and the corresponding phase coherence length is consistent with that extracted from the weak antilocalization. The phase coherence length is proportional to T-1/2. The magnetoresistance ratio reaches 700% (1000%) at 9 T (14 T) and 2 K, and it is proportional to the carrier mobility. The magnetoresistance ratio is larger than all reported values in (Bi, Sb)2(Te, Se)3 topological insulators.

Josephson supercurrent through a topological insulator surface state.

PubMed

Veldhorst, M; Snelder, M; Hoek, M; Gang, T; Guduru, V K; Wang, X L; Zeitler, U; van der Wiel, W G; Golubov, A A; Hilgenkamp, H; Brinkman, A

2012-02-19

The long-sought yet elusive Majorana fermion is predicted to arise from a combination of a superconductor and a topological insulator. An essential step in the hunt for this emergent particle is the unequivocal observation of supercurrent in a topological phase. Here, direct evidence for Josephson supercurrents in superconductor (Nb)-topological insulator (Bi(2)Te(3))-superconductor electron-beam fabricated junctions is provided by the observation of clear Shapiro steps under microwave irradiation, and a Fraunhofer-type dependence of the critical current on magnetic field. Shubnikov-de Haas oscillations in magnetic fields up to 30 T reveal a topologically non-trivial two-dimensional surface state. This surface state is attributed to mediate the ballistic Josephson current despite the fact that the normal state transport is dominated by diffusive bulk conductivity. The lateral Nb-Bi(2)Te(3)-Nb junctions hence provide prospects for the realization of devices supporting Majorana fermions.

Realizing Haldane model in Fe-based honeycomb ferromagnetic insulators

NASA Astrophysics Data System (ADS)

Kim, Heung-Sik; Kee, Hae-Young

2017-12-01

The topological Haldane model on a honeycomb lattice is a prototype of systems hosting topological phases of matter without external fields. It is the simplest model exhibiting the quantum Hall effect without Landau levels, which motivated theoretical and experimental explorations of topological insulators and superconductors. Despite its simplicity, its realization in condensed matter systems has been elusive due to a seemingly difficult condition of spinless fermions with sublattice-dependent magnetic flux terms. While there have been theoretical proposals including elaborate atomic-scale engineering, identifying candidate topological Haldane model materials has not been successful, and the first experimental realization was recently made in ultracold atoms. Here, we suggest that a series of Fe-based honeycomb ferromagnetic insulators, AFe2(PO4)2 (A=Ba, Cs, K, La) possess Chern bands described by the topological Haldane model. How to detect the quantum anomalous Hall effect is also discussed.

Helical Majorana fermions in d+id'-wave topological superconductivity of doped correlated quantum spin Hall insulators

NASA Astrophysics Data System (ADS)

Chung, Chung-Hou; Sun, Shih-Jye; Chang, Yung-Yeh; Tsai, Wei-Feng; Zhang, Fuchun

Large Hubbard U limit of the Kane-Mele model on a zigzag ribbon of honeycomb lattice near half-filling is studied via a renormalized mean-field theory. The ground state exhibits time-reversal symmetry (TRS) breaking dx2 -y2 + idxy -wave superconductivity. At large spin-orbit coupling, the Z2 topological phase with non-trivial spin Chern number in the pure Kane-Mele model is persistent into the TRS broken state (called ``spin-Chern phase''), and has two pairs of counter-propagating helical Majorana modes at the edges. As the spin-orbit coupling is reduced, the system undergoes a topological quantum phase transition from the spin-Chern to chiral superconducting states. Possible relevance of our results to adatom-doped graphene and irridate compounds is discussed.Ref.:Shih-Jye Sun, Chung-Hou Chung, Yung-Yeh Chang, Wei-Feng Tsai, and Fu-Chun Zhang, arXiv:1506.02584. CHC acknowledges support from NSC Grant No. 98-2918-I-009-06, No. 98-2112-M-009-010-MY3, the NCTU-CTS, the MOE-ATU program, the NCTS of Taiwan, R.O.C.

Strong topological metal material with multiple Dirac cones

DOE PAGES

Ji, Huiwen; Valla, T.; Pletikosic, I.; ...

2016-01-25

We report a new, cleavable, strong topological metal, Zr 2Te 2P, which has the same tetradymite-type crystal structure as the topological insulator Bi 2Te 2Se. Instead of being a semiconductor, however, Zr 2Te 2P is metallic with a pseudogap between 0.2 and 0.7 eV above the Fermi energy (E F). Inside this pseudogap, two Dirac dispersions are predicted: one is a surface-originated Dirac cone protected by time-reversal symmetry (TRS), while the other is a bulk-originated and slightly gapped Dirac cone with a largely linear dispersion over a 2 eV energy range. A third surface TRS-protected Dirac cone is predicted, andmore » observed using angle-resolved photoemission spectroscopy, making Z r2Te 2P the first system, to our knowledge, to realize TRS-protected Dirac cones at M¯ points. The high anisotropy of this Dirac cone is similar to the one in the hypothetical Dirac semimetal BiO 2. As a result, we propose that if E F can be tuned into the pseudogap where the Dirac dispersions exist, it may be possible to observe ultrahigh carrier mobility and large magnetoresistance in this material.« less

Acquisition of He3 Cryostat Insert for Experiments on Topological Insulators

DTIC Science & Technology

2016-02-03

facilitated transport experiments on topological insulators and Dirac and Weyl semimetals. These experiments resulted in several notable achievements and...Approved for Public Release; Distribution Unlimited Final Report: Acquisition of He3 Cryostat Insert for Experiments on Topological Insulators . The views...Experiments on Topological Insulators . Report Title The award enabled the PI to acquire a complete cryogenic system with a 9-Tesla superconducting magnet. The

Developing Topological Insulator Fiber Based Photon Pairs Source for Ultrafast Optoelectronic Applications

DTIC Science & Technology

2016-04-01

DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED PHOTON PAIRS SOURCE FOR ULTRAFAST OPTOELECTRONIC APPLICATIONS NORTHWESTERN UNIVERSITY...REPORT TYPE FINAL TECHNICAL REPORT 3. DATES COVERED (From - To) APRIL 2015 – DEC 2015 4. TITLE AND SUBTITLE DEVELOPING TOPOLOGICAL INSULATOR FIBER BASED...in developing a new source for the production of correlated/entangled photon pairs based on the unique nanolayer properties of topological insulator

Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

NASA Astrophysics Data System (ADS)

Kou, Liangzhi; Fu, Huixia; Ma, Yandong; Yan, Binghai; Liao, Ting; Du, Aijun; Chen, Changfeng

2018-02-01

We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). We showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by C H2OH , which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, Steve M.; Manni, S.; Shao, Junping

BaSn 2 has been shown to form as layers of buckled stanene intercalated by barium ions. However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn 2 has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide families, it would represent a unique manifestation of the topological insulating phase. Here in this paper, we present a detailed investigation of BaSn 2, using both ab initio and experimental methods. First-principles calculations demonstrate that this overlooked material is indeed a strong, wide-gapmore » topological insulator with a bulk band gap of 200 meV. We characterize the surface state dependence on termination chemistry, providing guidance for experimental efforts to measure and manipulate its topological properties. Additionally, through ab initio modeling and synthesis experiments, we explore the stability and accessibility of this phase, revealing a complicated phase diagram that indicates a challenging path to obtaining single crystals.« less

Negative Magnetoresistance without Chiral Anomaly in Topological Insulators.

PubMed

Dai, Xin; Du, Z Z; Lu, Hai-Zhou

2017-10-20

An intriguing phenomenon in topological semimetals and topological insulators is the negative magnetoresistance (MR) observed when a magnetic field is applied along the current direction. A prevailing understanding to the negative MR in topological semimetals is the chiral anomaly, which, however, is not well defined in topological insulators. We calculate the MR of a three-dimensional topological insulator, by using the semiclassical equations of motion, in which the Berry curvature explicitly induces an anomalous velocity and orbital moment. Our theoretical results are in quantitative agreement with the experiments. The negative MR is not sensitive to temperature and increases as the Fermi energy approaches the band edge. The orbital moment and g factors also play important roles in the negative MR. Our results give a reasonable explanation to the negative MR in 3D topological insulators and will be helpful in understanding the anomalous quantum transport in topological states of matter.

Direct visualization of a two-dimensional topological insulator in the single-layer 1 T'-WT e2

NASA Astrophysics Data System (ADS)

Jia, Zhen-Yu; Song, Ye-Heng; Li, Xiang-Bing; Ran, Kejing; Lu, Pengchao; Zheng, Hui-Jun; Zhu, Xin-Yang; Shi, Zhi-Qiang; Sun, Jian; Wen, Jinsheng; Xing, Dingyu; Li, Shao-Chun

2017-07-01

We have grown nearly freestanding single-layer 1 T'-WT e2 on graphitized 6 H -SiC(0001) by using molecular beam epitaxy (MBE), and characterized its electronic structure with scanning tunneling microscopy/spectroscopy (STM/STS). The existence of topological edge states at the periphery of single-layer WT e2 islands was confirmed. Surprisingly, a bulk band gap at the Fermi level and insulating behaviors were also found in single-layer WT e2 at low temperature, which are likely associated with an incommensurate charge order transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition-metal dichalcogenide provides a promising platform for further exploration of the 2D TIs' physics and related applications.

Nonequilibrium Floquet States in Topological Kondo Insulators

DTIC Science & Technology

2016-02-04

increase in an insulating crystal of SmB6. However, extrinsic heating effects are a potential source of the observation, which would act to reduce...the first known topological Kondo insulator , Samarium Hexaboride, we investigated the possibility of realizing a moving cascade of topological... insulator -to-metal transitions to obtain bulk-like conduction through the Kondo insulator . Experiments in collaboration with Prof. T. Yanagisawa at

A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Suturin, S. M.; Sokolov, N. S.; Kokh, K. A.; Tereshchenko, O. E.

2018-03-01

Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

Investigation of Positron Sticking to the Surfaces of Topological Insulators

NASA Astrophysics Data System (ADS)

Shastry, K.; Joglekar, P. V.; Olenga, A. Y.; Fazleev, N. G.; Weiss, A. H.; Barniellini, B.

2013-03-01

We describe experiments aimed at probing the sticking of positrons to the surfaces of topological insulators. In these experiments, a magnetically beam will be used to deposit positrons at the surface of Bi2Te2Se. The energy spectra and intensities of electrons emitted as a result of Positron Annihilation induced Auger electron Spectroscopy (PAES) provides a distinct element specific signal which can be used to determine if positrons can be trapped efficiently into a surface localized bound state. The experiments are aimed at determining the practicality of using positron annihilation to selectively probe the critically important top most layer of topological insulator system. Welch Y1100, NSF DMR 0907679

Ultrafast dynamics of an unoccupied surface resonance state in B i2T e2Se

NASA Astrophysics Data System (ADS)

Munisa, Nurmamat; Krasovskii, E. E.; Ishida, Y.; Sumida, K.; Chen, Jiahua; Yoshikawa, T.; Chulkov, E. V.; Kokh, K. A.; Tereshchenko, O. E.; Shin, S.; Kimura, Akio

2018-03-01

Electronic structure and electron dynamics in the ternary topological insulator B i2T e2Se are studied with time- and angle-resolved photoemission spectroscopy using optical pumping. An unoccupied surface resonance split off from the bulk conduction band previously indirectly observed in scanning tunneling measurements is spectroscopically identified. Furthermore, an unoccupied topological surface state (TSS) is found, which is serendipitously located at about 1.5 eV above the occupied TSS, thereby facilitating direct optical transitions between the two surface states at ℏ ω =1.5 eV in an n -type topological insulator. An appreciable nonequilibrium population of the bottom of the bulk conduction band is observed for longer than 15 ps after the pump pulse. This leads to a long recovery time of the lower TSS, which is constantly populated by the electrons coming from the bulk conduction band. Our results demonstrate B i2T e2Se to be an ideal platform for designing future optoelectronic devices based on topological insulators.

In-surface confinement of topological insulator nanowire surface states

NASA Astrophysics Data System (ADS)

Chen, Fan W.; Jauregui, Luis A.; Tan, Yaohua; Manfra, Michael; Klimeck, Gerhard; Chen, Yong P.; Kubis, Tillmann

2015-09-01

The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

Functionalized Thallium Antimony Films as Excellent Candidates for Large-Gap Quantum Spin Hall Insulator

PubMed Central

Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Sheng-shi; Yan, Shi-shen; Li, Ping; Wang, Pei-ji

2016-01-01

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless transport edge channels using quantum spin Hall (QSH) effects. Here we use first-principles calculations to predict a class of large-gap QSH insulators in functionalized TlSb monolayers (TlSbX2; (X = H, F, Cl, Br, I)), with sizable bulk gaps as large as 0.22 ~ 0.40 eV. The QSH state is identified by Z2 topological invariant together with helical edge states induced by spin-orbit coupling (SOC). Noticeably, the inverted band gap in the nontrivial states can be effectively tuned by the electric field and strain. Additionally, these films on BN substrate also maintain a nontrivial QSH state, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of QSH insulators based on two-dimensional honeycomb lattices in spintronics. PMID:26882865

Functionalized Thallium Antimony Films as Excellent Candidates for Large-Gap Quantum Spin Hall Insulator.

PubMed

Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Sheng-shi; Yan, Shi-shen; Li, Ping; Wang, Pei-ji

2016-02-17

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless transport edge channels using quantum spin Hall (QSH) effects. Here we use first-principles calculations to predict a class of large-gap QSH insulators in functionalized TlSb monolayers (TlSbX2; (X = H, F, Cl, Br, I)), with sizable bulk gaps as large as 0.22~0.40 eV. The QSH state is identified by Z2 topological invariant together with helical edge states induced by spin-orbit coupling (SOC). Noticeably, the inverted band gap in the nontrivial states can be effectively tuned by the electric field and strain. Additionally, these films on BN substrate also maintain a nontrivial QSH state, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of QSH insulators based on two-dimensional honeycomb lattices in spintronics.

Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel

2015-06-30

Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb) 2Te 3 (CBST) films grown on SrTiO 3 (1 1 1) substrates with and without a Te capping layer. We find that bothmore » the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.« less

Topological Anderson insulator phase in a Dirac-semimetal thin film

NASA Astrophysics Data System (ADS)

Chen, Rui; Xu, Dong-Hui; Zhou, Bin

2017-06-01

The recently discovered topological Dirac semimetal represents a new exotic quantum state of matter. Topological Dirac semimetals can be viewed as three-dimensional analogues of graphene, in which the Dirac nodes are protected by crystalline symmetry. It has been found that the quantum confinement effect can gap out Dirac nodes and convert Dirac semimetal to a band insulator. The band insulator is either a normal insulator or quantum spin Hall insulator, depending on the thin-film thickness. We present the study of disorder effects in a thin film of Dirac semimetals. It is found that moderate Anderson disorder strength can drive a topological phase transition from a normal band insulator to a topological Anderson insulator in a Dirac-semimetal thin film. The numerical calculation based on the model parameters of Dirac semimetal Na3Bi shows that in the topological Anderson insulator phase, a quantized conductance plateau occurs in the bulk gap of the band insulator, and the distributions of local currents further confirm that the quantized conductance plateau arises from the helical edge states induced by disorder. Finally, an effective medium theory based on the Born approximation fits the numerical data.

Two dimensional topological insulator in quantizing magnetic fields

NASA Astrophysics Data System (ADS)

Olshanetsky, E. B.; Kvon, Z. D.; Gusev, G. M.; Mikhailov, N. N.; Dvoretsky, S. A.

2018-05-01

The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a metal-insulator transition at B ≈ 6 T. On the whole the experimental data agrees with the theory according to which the helical edge states transport in a 2D TI persists from zero up to a critical magnetic field Bc after which a gap opens up in the 2D TI spectrum.

Nanoscale electron transport at the surface of a topological insulator.

PubMed

Bauer, Sebastian; Bobisch, Christian A

2016-04-21

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Nanoscale electron transport at the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Bauer, Sebastian; Bobisch, Christian A.

2016-04-01

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms

PubMed Central

Nobukane, Hiroyoshi; Matsuyama, Toyoki; Tanda, Satoshi

2017-01-01

The quantum anomaly that breaks the symmetry, for example the parity and the chirality, in the quantization leads to a physical quantity with a topological Chern invariant. We report the observation of a Chern structure in the Bose-insulating phase of Sr2RuO4 nanofilms by employing electric transport. We observed the superconductor-to-insulator transition by reducing the thickness of Sr2RuO4 single crystals. The appearance of a gap structure in the insulating phase implies local superconductivity. Fractional quantized conductance was observed without an external magnetic field. We found an anomalous induced voltage with temperature and thickness dependence, and the induced voltage exhibited switching behavior when we applied a magnetic field. We suggest that there was fractional magnetic-field-induced electric polarization in the interlayer. These anomalous results are related to topological invariance. The fractional axion angle Θ = π/6 was determined by observing the topological magneto-electric effect in the Bose-insulating phase of Sr2RuO4 nanofilms. PMID:28112269

Geometric effects on surface states in topological insulator Bi2Te3 nanowire

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillman; Povolotskyi, Michael; Klimeck, Gerhard

2012-02-01

Bismuth Telluride (BT) is a 3D topological insulator (TI) with surface states that have energy dispersion linear in momentum and forms a Dirac cone at low energy. In this work we investigate the surface properties of a BT nanowire and demonstrate the existence of TI states. We also show how such states vanish under certain geometric conditions. An atomistic model (sp3d5s* TB) is used to compute the energy dispersion in a BT nanowire. Penetration depth of the surface states is estimated by ratio of Fermi velocity and band-gap. BT possesses a tiny band-gap, which creates small localization of surface states and greater penetration in to the bulk. To offset this large spatial penetration, which is undesirable to avoid a direct coupling between surfaces, we expect that bigger cross-sections of BT nanowires would be needed to obtain stable TI states. Our numerical work validates this prediction. Furthermore, geometry of the nanowire is shown to influence the TI states. Using a combined analytical and numerical approach our results reveal that surface roughness impact electronic structure leading to Rashba type splits along z-direction. Cylindrical and square cross-sections are given as illustrative examples.

Experimental demonstration of anomalous Floquet topological insulator for sound

NASA Astrophysics Data System (ADS)

Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng

2016-11-01

Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states.

Experimental demonstration of anomalous Floquet topological insulator for sound

PubMed Central

Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng

2016-01-01

Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states. PMID:27834375

Photoinduced half-integer quantized conductance plateaus in topological-insulator/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yap, Han Hoe; Zhou, Longwen; Lee, Ching Hua; Gong, Jiangbin

2018-04-01

The past few years have witnessed increased attention to the quest for Majorana-like excitations in the condensed matter community. As a promising candidate in this race, the one-dimensional chiral Majorana edge mode (CMEM) in topological insulator-superconductor heterostructures has gathered renewed interests after an experimental breakthrough [Q. L. He et al., Science 357, 294 (2017), 10.1126/science.aag2792]. In this work, we study computationally the quantum transport of topological insulator-superconductor hybrid devices subject to time-periodic modulation. We report half-integer quantized conductance plateaus at 1/2 e/2h and 3/2 e/2h upon applying the so-called sum rule in the theory of quantum transport in Floquet topological matter. In particular, in a photoinduced topological superconductor sandwiched between two Floquet Chern insulators, it is found that for each Floquet sideband, the CMEM admits equal probability for normal transmission and local Andreev reflection over a wide range of parameter regimes, yielding half-integer quantized plateaus that resist static and time-periodic disorder. While it is well-established that periodic driving fields can simultaneously create and manipulate multiple pairs of Majorana bound states, their detection scheme remains elusive, in part due to their being neutral excitations. Therefore the 3/2 e/2h plateau indicates the possibility to verify the generation of multiple pairs of photoinduced CMEMs via transport measurements. The robust and half-quantized conductance plateaus due to CMEMs are both fascinating and subtle because they only emerge after a summation over contributions from all Floquet sidebands. Our work may add insights into the transport properties of Floquet topological systems and stimulate further studies on the optical control of topological superconductivity.

Observation of cyclotron resonance and electron-phonon coupling in surface states of the bulk-insulating topological insulator Cu 0.02Bi 2Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Liang; Tse, Wang-Kong; Morris, C. M.

2015-02-05

We have utilized magneto-optical time-domain spectroscopy to investigate the low frequency optical response of topological insulator Cu 0.02Bi 2Se 3 and Bi 2Se 3 films. With both field and frequency depedence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both samples. The small amount of Cu substitution into the Cu 0.02Bi 2Se 3 induces a true bulk insulator with only a single conduction channel with total sheet carrier density 4.9 x 10 12/cm 2 and mobility as large as 4000 cm 2/V s. Thismore » is consistent with pure topological surface state (TSSs) conduction with a chemical potential 150 meV above the Dirac point. Hence, a true topological insulator with an insulating bulk is realized. The CR broadens at high fields, an e ect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis on the zero field data. In contrast to Cu 0.02Bi 2Se 3, two charge channels were observed in normal Bi 2Se 3 films. We demonstrate a method to distinguish between the dominant TSSs and trivial bulk/2DEG states. The dominant channel exhibits a CR with a carrier density of ~2.0 x 10 13/cm 2 and mobility ~3200 cm 2/V s, consistent with TSSs with a chemical potential ~350meV above the Dirac point.« less

Superconductivity in a Misfit Phase That Combines the Topological Crystalline Insulator Pb 1-xSn xSe with the CDW-Bearing Transition Metal Dichalcogenide TiSe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, H.; Yan, K.; Pletikosic, I.

We report the characterization of the misfit compound (Pb 1-xSn xSe 2)1.16(TiSe 2) 2 for 0 ≤ x ≤ 0.6, in which a [100] rocksalt-structure bilayer of Pb1-xSnxSe, which is a topological crystalline insulator in bulk form, alternates with a double layer of the normally nonsuperconducting transition metal dichalcogenide TiSe 2. The x dependence of Tc displays a weak dome-like shape with a maximum Tc of 4.5 K at x = 0.2; there is only a subtle change in Tc at the composition where the trivial to topological transition occurs in bulk Pb1-xSnxSe. We present the characterization of the superconductormore » at x = 0.4, for which the bulk Pb1-xSnxSe phase is in the topological crystalline insulator regime. For this material, the Sommerfeld parameter γ = 11.06 mJ mol -1 K -2, the Debye temperature Θ D = 161 K, the normalized specific heat jump value ΔC/γT c = 1.38 and the electron-phonon constant value γ ep = 0.72, suggesting that (Pb 0.6Sn 0.4Se) 1.16(TiSe 2) 2 is a BCS-type weak coupling superconductor. This material may be of interest for probing the interaction of superconductivity with the surface states of a topological crystalline insulator.« less

Superconductivity in a Misfit Phase That Combines the Topological Crystalline Insulator Pb 1-xSn xSe with the CDW-Bearing Transition Metal Dichalcogenide TiSe 2

DOE PAGES

Luo, H.; Yan, K.; Pletikosic, I.; ...

2016-05-13

We report the characterization of the misfit compound (Pb 1-xSn xSe 2)1.16(TiSe 2) 2 for 0 ≤ x ≤ 0.6, in which a [100] rocksalt-structure bilayer of Pb1-xSnxSe, which is a topological crystalline insulator in bulk form, alternates with a double layer of the normally nonsuperconducting transition metal dichalcogenide TiSe 2. The x dependence of Tc displays a weak dome-like shape with a maximum Tc of 4.5 K at x = 0.2; there is only a subtle change in Tc at the composition where the trivial to topological transition occurs in bulk Pb1-xSnxSe. We present the characterization of the superconductormore » at x = 0.4, for which the bulk Pb1-xSnxSe phase is in the topological crystalline insulator regime. For this material, the Sommerfeld parameter γ = 11.06 mJ mol -1 K -2, the Debye temperature Θ D = 161 K, the normalized specific heat jump value ΔC/γT c = 1.38 and the electron-phonon constant value γ ep = 0.72, suggesting that (Pb 0.6Sn 0.4Se) 1.16(TiSe 2) 2 is a BCS-type weak coupling superconductor. This material may be of interest for probing the interaction of superconductivity with the surface states of a topological crystalline insulator.« less

Exactly soluble local bosonic cocycle models, statistical transmutation, and simplest time-reversal symmetric topological orders in 3+1 dimensions

NASA Astrophysics Data System (ADS)

Wen, Xiao-Gang

2017-05-01

We propose a generic construction of exactly soluble local bosonic models that realize various topological orders with gappable boundaries. In particular, we construct an exactly soluble bosonic model that realizes a (3+1)-dimensional [(3+1)D] Z2-gauge theory with emergent fermionic Kramers doublet. We show that the emergence of such a fermion will cause the nucleation of certain topological excitations in space-time without pin+ structure. The exactly soluble model also leads to a statistical transmutation in (3+1)D. In addition, we construct exactly soluble bosonic models that realize 2 types of time-reversal symmetry-enriched Z2 topological orders in 2+1 dimensions, and 20 types of simplest time-reversal symmetry-enriched topological (SET) orders which have only one nontrivial pointlike and stringlike topological excitation. Many physical properties of those topological states are calculated using the exactly soluble models. We find that some time-reversal SET orders have pointlike excitations that carry Kramers doublet, a fractionalized time-reversal symmetry. We also find that some Z2 SET orders have stringlike excitations that carry anomalous (nononsite) Z2 symmetry, which can be viewed as a fractionalization of Z2 symmetry on strings. Our construction is based on cochains and cocycles in algebraic topology, which is very versatile. In principle, it can also realize emergent topological field theory beyond the twisted gauge theory.

Quantum Hall effect in dual gated BiSbTeSe2 topological insulator

NASA Astrophysics Data System (ADS)

Chong, Su Kong; Han, Kyu Bum; Nagaoka, Akira; Harmer, Jared; Tsuchikawa, Ryuichi; Sparks, Taylor D.; Deshpande, Vikram V.

The discovery of topological insulators (TIs) has expanded the family of Dirac materials and enables the probing of exotic matter such as Majorana fermions and magnetic monopoles. Different from conventional 2D electron gas, 3D TIs exhibit a gapped insulating bulk and gapless topological surface states as a result of the strong spin-orbit coupling. BiSbTeSe2 is also known to be a 3D TI with a large intrinsic bulk gap of about 0.3 eV and a single Dirac cone surface state. The highly bulk insulating BiSbTeSe2 permits surface dominated conduction, which is an ideal system for the study of quantum Hall effect (QHE). Due to the spin-momentum locking, the Dirac fermions at the topological surface states have a degeneracy of one. In the QH regime, the Hall conductance is quantized to (n + 1 / 2) e2 / h , where n is an integer and the factor of half is related to Berry curvature. In this work, we study the QHE 3D TI using a dual gated BiSbTeSe2 device. By tuning the chemical potentials on top and bottom surfaces, integer QHE with Landau filling factors, ν = 0, +/-1, and +/-2 are observed.

Surface-State-Dominated Spin-Charge Current Conversion in Topological-Insulator-Ferromagnetic-Insulator Heterostructures.

PubMed

Wang, Hailong; Kally, James; Lee, Joon Sue; Liu, Tao; Chang, Houchen; Hickey, Danielle Reifsnyder; Mkhoyan, K Andre; Wu, Mingzhong; Richardella, Anthony; Samarth, Nitin

2016-08-12

We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films-Bi_{2}Se_{3} and (Bi,Sb)_{2}Te_{3}-deposited by molecular beam epitaxy on Y_{3}Fe_{5}O_{12} thin films. By systematically varying the Bi_{2}Se_{3} film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (λ_{IREE}), increases dramatically as the film thickness is increased from two quintuple layers, saturating above six quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological-insulator-ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of Y_{3}Fe_{5}O_{12}/(Bi,Sb)_{2}Te_{3} heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and λ_{IREE}.

Photochemical Water Splitting by Bismuth Chalcogenide Topological Insulators.

PubMed

Rajamathi, Catherine R; Gupta, Uttam; Pal, Koushik; Kumar, Nitesh; Yang, Hao; Sun, Yan; Shekhar, Chandra; Yan, Binghai; Parkin, Stuart; Waghmare, Umesh V; Felser, Claudia; Rao, C N R

2017-09-06

As one of the major areas of interest in catalysis revolves around 2D materials based on molybdenum sulfide, we have examined the catalytic properties of bismuth selenides and tellurides, which are among the first chalcogenides to be proven as topological insulators (TIs). We find significant photochemical H 2 evolution activity with these TIs as catalysts. H 2 evolution increases drastically in nanosheets of Bi 2 Te 3 compared to single crystals. First-principles calculations show that due to the topology, surface states participate and promote the hydrogen evolution. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental verification of acoustic pseudospin multipoles in a symmetry-broken snowflakelike topological insulator

NASA Astrophysics Data System (ADS)

Zhang, Zhiwang; Tian, Ye; Cheng, Ying; Liu, Xiaojun; Christensen, Johan

2017-12-01

Topologically protected wave engineering in artificially structured media resides at the frontier of ongoing metamaterials research, which is inspired by quantum mechanics. Acoustic analogs of electronic topological insulators have recently led to a wealth of new opportunities in manipulating sound propagation by means of robust edge mode excitations through analogies drawn to exotic quantum states. A variety of artificial acoustic systems hosting topological edge states have been proposed analogous to the quantum Hall effect, topological insulators, and Floquet topological insulators in electronic systems. However, those systems were characterized by a fixed geometry and a very narrow frequency response, which severely hinders the exploration and design of useful applications. Here we establish acoustic multipolar pseudospin states as an engineering degree of freedom in time-reversal invariant flow-free phononic crystals and develop reconfigurable topological insulators through rotation of their meta-atoms and reshaping of the metamolecules. Specifically, we show how rotation forms man-made snowflakelike molecules, whose topological phase mimics pseudospin-down (pseudospin-up) dipolar and quadrupolar states, which are responsible for a plethora of robust edge confined properties and topological controlled refraction disobeying Snell's law.

Substitution-induced spin-splitted surface states in topological insulator (Bi1−xSbx)2Te3

PubMed Central

He, Xiaoyue; Li, Hui; Chen, Lan; Wu, Kehui

2015-01-01

We present a study on surface states of topological insulator (Bi1−xSbx)2Te3 by imaging quasiparticle interference patterns (QPI) using low temperature scanning tunneling microscope. Besides the topological Dirac state, we observed another surface state with chiral spin texture within the conduction band range. The quasiparticle scattering in this state is selectively suppressed. Combined with first-principles calculations, we attribute this state to a spin-splitted band induced by the substitution of Bi with Sb atoms. Our results demonstrate that the coexistence of topological order and alloying may open wider tunability in quantum materials. PMID:25743262

Interfacial Dirac cones from alternating topological invariant superlattice structures of Bi2Se3.

PubMed

Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J

2010-08-27

When the three-dimensional topological insulators Bi2Se3 and Bi2Te3 have an interface with vacuum, i.e., a surface, they show remarkable features such as topologically protected and spin-momentum locked surface states. However, for practical applications, one often requires multiple interfaces or channels rather than a single surface. Here, for the first time, we show that an interfacial and ideal Dirac cone is realized by alternating band and topological insulators. The multichannel Dirac fermions from the superlattice structures open a new way for applications such as thermoelectric and spintronics devices. Indeed, utilizing the interfacial Dirac fermions, we also demonstrate the possible power factor improvement for thermoelectric applications.

Dimensional crossover and cold-atom realization of topological Mott insulators

PubMed Central

Scheurer, Mathias S.; Rachel, Stephan; Orth, Peter P.

2015-01-01

Interacting cold-atomic gases in optical lattices offer an experimental approach to outstanding problems of many body physics. One important example is the interplay of interaction and topology which promises to generate a variety of exotic phases such as the fractionalized Chern insulator or the topological Mott insulator. Both theoretically understanding these states of matter and finding suitable systems that host them have proven to be challenging problems. Here we propose a cold-atom setup where Hubbard on-site interactions give rise to spin liquid-like phases: weak and strong topological Mott insulators. They represent the celebrated paradigm of an interacting and topological quantum state with fractionalized spinon excitations that inherit the topology of the non-interacting system. Our proposal shall help to pave the way for a controlled experimental investigation of this exotic state of matter in optical lattices. Furthermore, it allows for the investigation of a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator by tuning the hopping between the layers. PMID:25669431

Phase coherent transport in hybrid superconductor-topological insulator devices

NASA Astrophysics Data System (ADS)

Finck, Aaron

2015-03-01

Heterostructures of superconductors and topological insulators are predicted to host unusual zero energy bound states known as Majorana fermions, which can robustly store and process quantum information. Here, I will discuss our studies of such heterostructures through phase-coherent transport, which can act as a unique probe of Majorana fermions. We have extensively explored topological insulator Josephson junctions through SQUID and single-junction diffraction patterns, whose unusual behavior give evidence for low-energy Andreev bound states. In topological insulator devices with closely spaced normal and superconducting leads, we observe prominent Fabry-Perot oscillations, signifying gate-tunable, quasi-ballistic transport that can elegantly interact with Andreev reflection. Superconducting disks deposited on the surface of a topological insulator generate Aharonov-Bohm-like oscillations, giving evidence for unusual states lying near the interface between the superconductor and topological insulator surface. Our results point the way towards sophisticated interferometers that can detect and read out the state of Majorana fermions in topological systems. This work was done in collaboration with Cihan Kurter, Yew San Hor, and Dale Van Harlingen. We acknowledge funding from Microsoft Project Q.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2013-09-01

We study a two-dimensional fermionic square lattice, which supports the existence of a two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2π-flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2π-flux topological semimetal are protected by two distinct novel hidden symmetries, which both correspond to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry.

Topological crystalline insulator SnTe nanoribbons

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.; Dulal, Rajendra P.; Pegg, Ian L.; Philip, John

2017-03-01

Topological crystalline insulators are systems in which a band inversion that is protected by crystalline mirror symmetry gives rise to nontrivial topological surface states. SnTe is a topological crystalline insulator. It exhibits p-type conductivity due to Sn vacancies and Te antisites, which leads to high carrier density in the bulk. Thus growth of high quality SnTe is a prerequisite for understanding the topological crystalline insulating behavior. We have grown SnTe nanoribbons using a solution method. The width of the SnTe ribbons varies from 500 nm to 2 μm. They exhibit rock salt crystal structure with a lattice parameter of 6.32 Å. The solution method that we have adapted uses low temperature, so the Sn vacancies can be controlled. The solution grown SnTe nanoribbons exhibit strong semiconducting behavior with an activation energy of 240 meV. This activation energy matches with the calculated band gap for SnTe with a lattice parameter of 6.32 Å, which is higher than that reported for bulk SnTe. The higher activation energy makes the thermal excitation of bulk charges very difficult on the surface. As a result, the topological surfaces will be free from the disturbance caused by the thermal excitations

A quantized microwave quadrupole insulator with topologically protected corner states

NASA Astrophysics Data System (ADS)

Peterson, Christopher W.; Benalcazar, Wladimir A.; Hughes, Taylor L.; Bahl, Gaurav

2018-03-01

The theory of electric polarization in crystals defines the dipole moment of an insulator in terms of a Berry phase (geometric phase) associated with its electronic ground state. This concept not only solves the long-standing puzzle of how to calculate dipole moments in crystals, but also explains topological band structures in insulators and superconductors, including the quantum anomalous Hall insulator and the quantum spin Hall insulator, as well as quantized adiabatic pumping processes. A recent theoretical study has extended the Berry phase framework to also account for higher electric multipole moments, revealing the existence of higher-order topological phases that have not previously been observed. Here we demonstrate experimentally a member of this predicted class of materials—a quantized quadrupole topological insulator—produced using a gigahertz-frequency reconfigurable microwave circuit. We confirm the non-trivial topological phase using spectroscopic measurements and by identifying corner states that result from the bulk topology. In addition, we test the critical prediction that these corner states are protected by the topology of the bulk, and are not due to surface artefacts, by deforming the edges of the crystal lattice from the topological to the trivial regime. Our results provide conclusive evidence of a unique form of robustness against disorder and deformation, which is characteristic of higher-order topological insulators.

Tunable Intrinsic Spin Hall Conductivities in Bi2(Se,Te)3 Topological Insulators

NASA Astrophysics Data System (ADS)

Şahin, Cüneyt; Flatté, Michael E.

2015-03-01

It has been recently shown by spin-transfer torque measurements that Bi2Se3 exhibits a very large spin Hall conductivity (SHC). It is expected that Bi2Te3, a topological insulator with similar crystal and band structures as well as large spin-orbit coupling, would also exhibit a giant SHC. In this study we have calculated intrinsic spin Hall conductivities of Bi2Se3andBi2Te3 topological insulators from a tight-binding Hamiltonian including two nearest-neighbor interactions. We have calculated the Berry curvature, used the Kubo formula in the static, clean limit and shown that both materials exhibit giant spin Hall conductivities, consistent with the results of Ref. 1 and larger than previously reported Bi1-xSbx alloys. The density of Berry curvature has also been computed from the full Brillouin zone in order to compute the dependence of the SHC in these materials on the Fermi energy. Finally we report the intrinsic SHC for Bi2(Se,Te)3 topological insulators, which changes dramatically with doping or gate voltage. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

DOE PAGES

Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

2016-05-04

Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

Band structure and spin texture of Bi2Se3 3 d ferromagnetic metal interface

NASA Astrophysics Data System (ADS)

Zhang, Jia; Velev, Julian P.; Dang, Xiaoqian; Tsymbal, Evgeny Y.

2016-07-01

The spin-helical surface states in a three-dimensional topological insulator (TI), such as Bi2Se3 , are predicted to have superior efficiency in converting charge current into spin polarization. This property is said to be responsible for the giant spin-orbit torques observed in ferromagnetic metal/TI structures. In this work, using first-principles and model tight-binding calculations, we investigate the interface between the topological insulator Bi2Se3 and 3 d -transition ferromagnetic metals Ni and Co. We find that the difference in the work functions of the topological insulator and the ferromagnetic metals shift the topological surface states down about 0.5 eV below the Fermi energy where the hybridization of these surface states with the metal bands destroys their helical spin structure. The band alignment of Bi2Se3 and Ni (Co) places the Fermi energy far in the conduction band of bulk Bi2Se3 , where the spin of the carriers is aligned with the magnetization in the metal. Our results indicate that the topological surface states are unlikely to be responsible for the huge spin-orbit torque effect observed experimentally in these systems.

Strain-induced topological transition in SrRu 2O 6 and CaOs 2O 6

DOE PAGES

Ochi, Masayuki; Arita, Ryotaro; Trivedi, Nandini; ...

2016-05-24

The topological property of SrRumore » $$_2$$O$$_6$$ and isostructural CaOs$$_2$$O$$_6$$ under various strain conditions is investigated using density functional theory. Based on an analysis of parity eigenvalues, we anticipate that a three-dimensional strong topological insulating state should be realized when band inversion is induced at the A point in the hexagonal Brillouin zone. For SrRu$$_2$$O$$_6$$, such a transition requires rather unrealistic tuning, where only the $c$ axis is reduced while other structural parameters are unchanged. However, given the larger spin-orbit coupling and smaller lattice constants in CaOs$$_2$$O$$_6$$, the desired topological transition does occur under uniform compressive strain. Our study paves a way to realize a topological insulating state in a complex oxide, which has not been experimentally demonstrated so far.« less

Magnetic End States in a Strongly Interacting One-Dimensional Topological Kondo Insulator

DOE PAGES

Lobos, Alejandro M.; Dobry, Ariel O.; Galitski, Victor

2015-05-22

Topological Kondo insulators are strongly correlated materials where itinerant electrons hybridize with localized spins, giving rise to a topologically nontrivial band structure. Here, we use nonperturbative bosonization and renormalization-group techniques to study theoretically a one-dimensional topological Kondo insulator, described as a Kondo-Heisenberg model, where the Heisenberg spin-1/2 chain is coupled to a Hubbard chain through a Kondo exchange interaction in the p-wave channel (i.e., a strongly correlated version of the prototypical Tamm-Schockley model).We derive and solve renormalization-group equations at two-loop order in the Kondo parameter, and find that, at half filling, the charge degrees of freedom in the Hubbard chainmore » acquire a Mott gap, even in the case of a noninteracting conduction band (Hubbard parameter U = 0). Furthermore, at low enough temperatures, the system maps onto a spin-1/2 ladder with local ferromagnetic interactions along the rungs, effectively locking the spin degrees of freedom into a spin-1 chain with frozen charge degrees of freedom. This structure behaves as a spin-1 Haldane chain, a prototypical interacting topological spin model, and features two magnetic spin-1/2 end states for chains with open boundary conditions. In conclusion, our analysis allows us to derive an insightful connection between topological Kondo insulators in one spatial dimension and the well-known physics of the Haldane chain, showing that the ground state of the former is qualitatively different from the predictions of the naive mean-field theory.« less

Topological phases of topological-insulator thin films

NASA Astrophysics Data System (ADS)

Asmar, Mahmoud M.; Sheehy, Daniel E.; Vekhter, Ilya

2018-02-01

We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as a function of both the film thickness and the momentum in the plane of the film for Bi2Se3 and Bi2Te3 . As a result, while the magnitude of the matrix element at the center of the surface Brillouin zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and nontopological phases, separated by semimetallic states, as the film thickness varies. In the topological phase, the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi2Se3 , making Bi2Te3 , where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators.

Floquet topological insulators for sound

NASA Astrophysics Data System (ADS)

Fleury, Romain; Khanikaev, Alexander B.; Alù, Andrea

2016-06-01

The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters.

Floquet topological insulators for sound

PubMed Central

Fleury, Romain; Khanikaev, Alexander B; Alù, Andrea

2016-01-01

The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters. PMID:27312175

Current-induced switching of magnetic molecules on topological insulator surfaces

NASA Astrophysics Data System (ADS)

Locane, Elina; Brouwer, Piet W.

2017-03-01

Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matetskiy, A. V., E-mail: mateckij@iacp.dvo.ru; Kibirev, I. A.; Saranin, A. A.

The formation, structure and electronic properties of SnSe{sub 2}–Bi{sub 2}Se{sub 3} van der Waals heterostructures were studied. Both heterostructures, SnSe{sub 2} on Bi{sub 2}Se{sub 3} and Bi{sub 2}Se{sub 3} on SnSe{sub 2}, were grown epitaxially with high crystallinity and sharp interfaces. Their electron band structures are of trivial and topological insulators, respectively. The Dirac surface states of Bi{sub 2}Se{sub 3} survive under the SnSe{sub 2} overlayer. One triple layer of SnSe{sub 2} was found to be an efficient spacer for separating a Bi{sub 2}Se{sub 3} topological-insulator slab into two and creating the corresponding topological surface states.

Amorphous topological insulators constructed from random point sets

NASA Astrophysics Data System (ADS)

Mitchell, Noah P.; Nash, Lisa M.; Hexner, Daniel; Turner, Ari M.; Irvine, William T. M.

2018-04-01

The discovery that the band structure of electronic insulators may be topologically non-trivial has revealed distinct phases of electronic matter with novel properties1,2. Recently, mechanical lattices have been found to have similarly rich structure in their phononic excitations3,4, giving rise to protected unidirectional edge modes5-7. In all of these cases, however, as well as in other topological metamaterials3,8, the underlying structure was finely tuned, be it through periodicity, quasi-periodicity or isostaticity. Here we show that amorphous Chern insulators can be readily constructed from arbitrary underlying structures, including hyperuniform, jammed, quasi-crystalline and uniformly random point sets. While our findings apply to mechanical and electronic systems alike, we focus on networks of interacting gyroscopes as a model system. Local decorations control the topology of the vibrational spectrum, endowing amorphous structures with protected edge modes—with a chirality of choice. Using a real-space generalization of the Chern number, we investigate the topology of our structures numerically, analytically and experimentally. The robustness of our approach enables the topological design and self-assembly of non-crystalline topological metamaterials on the micro and macro scale.

Phononic band gap and wave propagation on polyvinylidene fluoride-based acoustic metamaterials

NASA Astrophysics Data System (ADS)

Oltulu, Oral; Simsek, Sevket; Mamedov, Amirullah M.; Ozbay, Ekmel

2016-12-01

In the present work, the acoustic band structure of a two-dimensional phononic crystal (PC) containing an organic ferroelectric (PVDF-polyvinylidene fluoride) and topological insulator (SnTe) was investigated by the plane-wave-expansion (PWE) method. Two-dimensional PC with square lattices composed of SnTe cylindrical rods embedded in the PVDF matrix is studied to find the allowed and stop bands for the waves of certain energy. Phononic band diagram ω = ω(k) for a 2D PC, in which non-dimensional frequencies ωa/2πc (c-velocity of wave) were plotted vs. the wavevector k along the Г-X-M-Г path in the square Brillouin zone shows five stop bands in the frequency range between 10 and 110 kHz. The ferroelectric properties of PVDF and the unusual properties of SnTe as a topological material give us the ability to control the wave propagation through the PC over a wide frequency range of 103-106 Hz. SnTe is a discrete component that allows conducting electricity on its surface but shows insulator properties through its bulk volume. Tin telluride is considered as an acoustic topological insulator as the extension of topological insulators into the field of "topological phononics".

Revealing the Topology of Fermi-Surface Wave Functions from Magnetic Quantum Oscillations

NASA Astrophysics Data System (ADS)

Alexandradinata, A.; Wang, Chong; Duan, Wenhui; Glazman, Leonid

2018-01-01

The modern semiclassical theory of a Bloch electron in a magnetic field now encompasses the orbital magnetic moment and the geometric phase. These two notions are encoded in the Bohr-Sommerfeld quantization condition as a phase (λ ) that is subleading in powers of the field; λ is measurable in the phase offset of the de Haas-van Alphen oscillation, as well as of fixed-bias oscillations of the differential conductance in tunneling spectroscopy. In some solids and for certain field orientations, λ /π are robustly integer valued, owing to the symmetry of the extremal orbit; i.e., they are the topological invariants of magnetotransport. Our comprehensive symmetry analysis identifies solids in any (magnetic) space group for which λ is a topological invariant, as well as the symmetry-enforced degeneracy of Landau levels. The analysis is simplified by our formulation of ten (and only ten) symmetry classes for closed, Fermi-surface orbits. Case studies are discussed for graphene, transition metal dichalcogenides, 3D Weyl and Dirac metals, and crystalline and Z2 topological insulators. In particular, we point out that a π phase offset in the fundamental oscillation should not be viewed as a smoking gun for a 3D Dirac metal.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

NASA Astrophysics Data System (ADS)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

NASA Astrophysics Data System (ADS)

Fuhrer, Michael

2013-03-01

The three dimensional strong topological insulator (STI) is a new phase of electronic matter which is distinct from ordinary insulators in that it supports on its surface a conducting two-dimensional surface state whose existence is guaranteed by topology. I will discuss experiments on the STI material Bi2Se3, which has a bulk bandgap of 300 meV, much greater than room temperature, and a single topological surface state with a massless Dirac dispersion. Field effect transistors consisting of thin (3-20 nm) Bi2Se3 are fabricated from mechanically exfoliated from single crystals, and electrochemical and/or chemical gating methods are used to move the Fermi energy into the bulk bandgap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be ~60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se3, which will have implications for topological electronic devices operating at room temperature. As samples are made thinner, coherent coupling of the top and bottom topological surfaces is observed through the magnitude of the weak anti-localization correction to the conductivity, and, in the thinnest Bi2Se3 samples (~ 3 nm), in thermally-activated conductivity reflecting the opening of a bandgap.

Spin-orbit torque-driven magnetization switching in 2D-topological insulator heterostructure

NASA Astrophysics Data System (ADS)

Soleimani, Maryam; Jalili, Seifollah; Mahfouzi, Farzad; Kioussis, Nicholas

2017-02-01

Charge pumping and spin-orbit torque (SOT) are two reciprocal phenomena widely studied in ferromagnet (FM)/topological insulator (TI) heterostructures. However, the SOT and its corresponding switching phase diagram for a FM island in proximity to a two-dimensional topological insulator (2DTI) has not been explored yet. We have addressed these features, using the recently developed adiabatic expansion of time-dependent nonequilibrium Green's function (NEGF) in the presence of both precessing magnetization and bias voltage. We have calculated the angular and spatial dependence of different components of the SOT on the FM island. We determined the switching phase diagram of the FM for different orientations of the easy axis. The results can be used as a guideline for the future experiments on such systems.

Enhanced spin-ordering temperature in ultrathin FeTe films grown on a topological insulator

NASA Astrophysics Data System (ADS)

Singh, Udai Raj; Warmuth, Jonas; Kamlapure, Anand; Cornils, Lasse; Bremholm, Martin; Hofmann, Philip; Wiebe, Jens; Wiesendanger, Roland

2018-04-01

We studied the temperature dependence of the diagonal double-stripe spin order in 1 and 2 unit cell thick layers of FeTe grown on the topological insulator B i2T e3 via spin-polarized scanning tunneling microscopy. The spin order persists up to temperatures which are higher than the transition temperature reported for bulk F e1 +yTe with lowest possible excess Fe content y . The enhanced spin order stability is assigned to a strongly decreased y with respect to the lowest values achievable in bulk crystal growth, and effects due to the interface between the FeTe and the topological insulator. The result is relevant for understanding the recent observation of a coexistence of superconducting correlations and spin order in this system.

Spintronics device made of topological materials

NASA Astrophysics Data System (ADS)

Wu, Jiansheng; Shi, Zhangsheng; Wang, Maoji

Topological Materials is a new state of matter of which the bulk states are gapped insulator or superconductor while the surface states are gapless metallic states. Such surface states are robust against local disorder and impurities due to its nontrivial topology. It induces unusual transport properties and shows nontrivial topological spin texture in real space. We have made use of these two exotic properties to make application in spintronics. For example, we propose to make spin-filter transistor using of 1D or 2D quantum anomalous Hall insulator or 2D topological Weyl semimetal, we also propose a device to measure the spin-polarization of current, a device to generate entangled entangled electron pairs. Startup funds of SUSTC, Shenzhen Peacock Plan, Shenzhen Free Exploration Plan with Grant Number JCYJ20150630145302225.

Topological Material-Based Spin Devices

NASA Astrophysics Data System (ADS)

Zhang, Minhao; Wang, Xuefeng

Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

Large Enhancement of Thermal Conductivity and Lorenz Number in Topological Insulator Thin Films.

PubMed

Luo, Zhe; Tian, Jifa; Huang, Shouyuan; Srinivasan, Mithun; Maassen, Jesse; Chen, Yong P; Xu, Xianfan

2018-02-27

Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly the effect of surface states, are lacking. In this work, we studied thickness-dependent in-plane thermal and electrical conductivity of Bi 2 Te 2 Se TI thin films. A large enhancement in both thermal and electrical conductivity was observed for films with thicknesses below 20 nm, which is attributed to the surface states and bulk-insulating nature of these films. Moreover, a surface Lorenz number much larger than the Sommerfeld value was found. Systematic transport measurements indicated that the Fermi surface is located near the charge neutrality point (CNP) when the film thickness is below 20 nm. Possible reasons for the large Lorenz number include electrical and thermal current decoupling in the surface state Dirac fluid, and bipolar diffusion transport. A simple computational model indicates that the surface states and bipolar diffusion indeed can lead to enhanced electrical and thermal transport and a large Lorenz number.

Predicting a new phase (T'') of two-dimensional transition metal di-chalcogenides and strain-controlled topological phase transition

NASA Astrophysics Data System (ADS)

Ma, Fengxian; Gao, Guoping; Jiao, Yalong; Gu, Yuantong; Bilic, Ante; Zhang, Haijun; Chen, Zhongfang; Du, Aijun

2016-02-01

Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T''), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T'' MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T'' phase unambiguously display similar band topologies and strain controlled topological phase transitions. Our findings greatly enrich the 2D families of transition metal dichalcogenides and offer a feasible way to control the electronic states of 2D topological insulators for the fabrication of high-speed spintronics devices.Single layered transition metal dichalcogenides have attracted tremendous research interest due to their structural phase diversities. By using a global optimization approach, we have discovered a new phase of transition metal dichalcogenides (labelled as T''), which is confirmed to be energetically, dynamically and kinetically stable by our first-principles calculations. The new T'' MoS2 phase exhibits an intrinsic quantum spin Hall (QSH) effect with a nontrivial gap as large as 0.42 eV, suggesting that a two-dimensional (2D) topological insulator can be achieved at room temperature. Most interestingly, there is a topological phase transition simply driven by a small tensile strain of up to 2%. Furthermore, all the known MX2 (M = Mo or W; X = S, Se or Te) monolayers in the new T'' phase unambiguously display similar band topologies and strain controlled topological phase transitions. Our findings greatly enrich the 2D families of transition metal dichalcogenides and offer a feasible way to control the electronic states of 2D topological insulators for the fabrication of high-speed spintronics devices. Electronic supplementary information (ESI) available: Detailed computational method; structural data of T'' MoS2; DOS of the T'' MoS2 phase under different strains; orbital energy of T'' MoS2 under different strains; electronic structures for all other five MX2 in the T'' phase; edge states of T'' MoS2. See DOI: 10.1039/c5nr07715j

Positron surface state as a spectroscopic probe for characterizing surfaces of topological insulator materials

NASA Astrophysics Data System (ADS)

Callewaert, Vincent; Shastry, K.; Saniz, Rolando; Makkonen, Ilja; Barbiellini, Bernardo; Assaf, Badih A.; Heiman, Donald; Moodera, Jagadeesh S.; Partoens, Bart; Bansil, Arun; Weiss, A. H.

2016-09-01

Topological insulators are attracting considerable interest due to their potential for technological applications and as platforms for exploring wide-ranging fundamental science questions. In order to exploit, fine-tune, control, and manipulate the topological surface states, spectroscopic tools which can effectively probe their properties are of key importance. Here, we demonstrate that positrons provide a sensitive probe for topological states and that the associated annihilation spectrum provides a technique for characterizing these states. Firm experimental evidence for the existence of a positron surface state near Bi2Te2Se with a binding energy of Eb=2.7 ±0.2 eV is presented and is confirmed by first-principles calculations. Additionally, the simulations predict a significant signal originating from annihilation with the topological surface states and show the feasibility to detect their spin texture through the use of spin-polarized positron beams.

Characterizing the structure of topological insulator thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue

2015-08-01

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi, Sb){sub 2}Te{sub 3} and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO{sub 3} and the use of capping layers to protect topological insulator films frommore » oxidation and exposure.« less

Global Phase Diagram of a Three-Dimensional Dirty Topological Superconductor

NASA Astrophysics Data System (ADS)

Roy, Bitan; Alavirad, Yahya; Sau, Jay D.

2017-06-01

We investigate the phase diagram of a three-dimensional, time-reversal symmetric topological superconductor in the presence of charge impurities and random s -wave pairing. Combining complimentary field theoretic and numerical methods, we show that the quantum phase transition between two topologically distinct paired states (or thermal insulators), described by thermal Dirac semimetal, remains unaffected in the presence of sufficiently weak generic randomness. At stronger disorder, however, these two phases are separated by an intervening thermal metallic phase of diffusive Majorana fermions. We show that across the insulator-insulator and metal-insulator transitions, normalized thermal conductance displays single parameter scaling, allowing us to numerically extract the critical exponents across them. The pertinence of our study in strong spin-orbit coupled, three-dimensional doped narrow gap semiconductors, such as CuxBi2Se3 , is discussed.

Proximity-Induced Superconductivity and Quantum Interference in Topological Crystalline Insulator SnTe Thin-Film Devices.

PubMed

Klett, Robin; Schönle, Joachim; Becker, Andreas; Dyck, Denis; Borisov, Kiril; Rott, Karsten; Ramermann, Daniela; Büker, Björn; Haskenhoff, Jan; Krieft, Jan; Hübner, Torsten; Reimer, Oliver; Shekhar, Chandra; Schmalhorst, Jan-Michael; Hütten, Andreas; Felser, Claudia; Wernsdorfer, Wolfgang; Reiss, Günter

2018-02-14

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and, thus, to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak anti-localization, and the weak links of the superconducting quantum interference devices (SQUID) exhibit fully gapped proximity-induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2π periodicity, possibly dominated by the bulk conductivity.

Topological crystalline magnets: Symmetry-protected topological phases of fermions

DOE PAGES

Watanabe, Haruki; Fu, Liang

2017-02-27

Here, we introduce a novel class of interaction-enabled topological crystalline insulators in two- and three-dimensional electronic systems, which we call “topological crystalline magnet.” It is protected by the product of the time-reversal symmetry T and a mirror symmetry or a rotation symmetry R. A topological crystalline magnet exhibits two intriguing features: (i) it cannot be adiabatically connected to any Slater insulator and (ii) the edge state is robust against coupling electrons to the edge. These features are protected by the anomalous symmetry transformation property ( RT) 2 = -1 of the edge state. Finally, an anisotropic response to the externalmore » magnetic field can be an experimental signature.« less

Topological crystalline magnets: Symmetry-protected topological phases of fermions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watanabe, Haruki; Fu, Liang

Here, we introduce a novel class of interaction-enabled topological crystalline insulators in two- and three-dimensional electronic systems, which we call “topological crystalline magnet.” It is protected by the product of the time-reversal symmetry T and a mirror symmetry or a rotation symmetry R. A topological crystalline magnet exhibits two intriguing features: (i) it cannot be adiabatically connected to any Slater insulator and (ii) the edge state is robust against coupling electrons to the edge. These features are protected by the anomalous symmetry transformation property ( RT) 2 = -1 of the edge state. Finally, an anisotropic response to the externalmore » magnetic field can be an experimental signature.« less

Chemical disorder in topological insulators: A route to magnetism tolerant topological surface states

DOE PAGES

Martínez-Velarte, M. Carmen; Kretz, Bernhard; Moro-Lagares, Maria; ...

2017-06-13

Here, we show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserves the topological spin texture of their surface states against a net surface magnetization. The spin texture is that of a Dirac cone with helical spin structure in the reciprocal space, which gives rise to spin-polarized and dissipation-less charge currents. Thanks to the nontrivial topology of the bulk electronic structure, this spin texture is robust against most types of surface defects. However, magnetic perturbations break the time-reversal symmetry, enabling magnetic scattering and loss of spin coherence of the charge carriers. This intrinsic incompatibility precludes the design of magnetoelectronicmore » devices based on the coupling between magnetic materials and topological surface states. We demonstrate that the magnetization coming from individual Co atoms deposited on the surface can disrupt the spin coherence of the carriers in the archetypal topological insulator Bi 2Te 3, while in Bi 2Se 2Te the spin texture remains unperturbed. This is concluded from the observation of elastic backscattering events in quasiparticle interference patterns obtained by scanning tunneling spectroscopy. The mechanism responsible for the protection is investigated by energy resolved spectroscopy and ab initio calculations, and it is ascribed to the distorted adsorption geometry of localized magnetic moments due to Se–Te disorder, which suppresses the Co hybridization with the surface states.« less

Chemical disorder in topological insulators: A route to magnetism tolerant topological surface states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martínez-Velarte, M. Carmen; Kretz, Bernhard; Moro-Lagares, Maria

Here, we show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserves the topological spin texture of their surface states against a net surface magnetization. The spin texture is that of a Dirac cone with helical spin structure in the reciprocal space, which gives rise to spin-polarized and dissipation-less charge currents. Thanks to the nontrivial topology of the bulk electronic structure, this spin texture is robust against most types of surface defects. However, magnetic perturbations break the time-reversal symmetry, enabling magnetic scattering and loss of spin coherence of the charge carriers. This intrinsic incompatibility precludes the design of magnetoelectronicmore » devices based on the coupling between magnetic materials and topological surface states. We demonstrate that the magnetization coming from individual Co atoms deposited on the surface can disrupt the spin coherence of the carriers in the archetypal topological insulator Bi 2Te 3, while in Bi 2Se 2Te the spin texture remains unperturbed. This is concluded from the observation of elastic backscattering events in quasiparticle interference patterns obtained by scanning tunneling spectroscopy. The mechanism responsible for the protection is investigated by energy resolved spectroscopy and ab initio calculations, and it is ascribed to the distorted adsorption geometry of localized magnetic moments due to Se–Te disorder, which suppresses the Co hybridization with the surface states.« less

Giant Faraday effect due to Pauli exclusion principle in 3D topological insulators.

PubMed

Paudel, Hari P; Leuenberger, Michael N

2014-02-26

Experiments using ARPES, which is based on the photoelectric effect, show that the surface states in 3D topological insulators (TI) are helical. Here we consider Weyl interface fermions due to band inversion in narrow-bandgap semiconductors, such as Pb1-xSnxTe. The positive and negative energy solutions can be identified by means of opposite helicity in terms of the spin helicity operator in 3D TI as ĥ(TI) = (1/ |p|_ |) β (σ|_ x p|_ ) · z^, where β is a Dirac matrix and z^ points perpendicular to the interface. Using the 3D Dirac equation and bandstructure calculations we show that the transitions between positive and negative energy solutions, giving rise to electron-hole pairs, obey strict optical selection rules. In order to demonstrate the consequences of these selection rules, we consider the Faraday effect due to the Pauli exclusion principle in a pump-probe setup using a 3D TI double interface of a PbTe/Pb₀.₃₁Sn₀.₆₉Te/PbTe heterostructure. For that we calculate the optical conductivity tensor of this heterostructure, which we use to solve Maxwell's equations. The Faraday rotation angle exhibits oscillations as a function of probe wavelength and thickness of the heterostructure. The maxima in the Faraday rotation angle are of the order of mrds.

Complete theory of symmetry-based indicators of band topology.

PubMed

Po, Hoi Chun; Vishwanath, Ashvin; Watanabe, Haruki

2017-06-30

The interplay between symmetry and topology leads to a rich variety of electronic topological phases, protecting states such as the topological insulators and Dirac semimetals. Previous results, like the Fu-Kane parity criterion for inversion-symmetric topological insulators, demonstrate that symmetry labels can sometimes unambiguously indicate underlying band topology. Here we develop a systematic approach to expose all such symmetry-based indicators of band topology in all the 230 space groups. This is achieved by first developing an efficient way to represent band structures in terms of elementary basis states, and then isolating the topological ones by removing the subset of atomic insulators, defined by the existence of localized symmetric Wannier functions. Aside from encompassing all earlier results on such indicators, including in particular the notion of filling-enforced quantum band insulators, our theory identifies symmetry settings with previously hidden forms of band topology, and can be applied to the search for topological materials.Understanding the role of topology in determining electronic structure can lead to the discovery, or appreciation, of materials with exotic properties such as protected surface states. Here, the authors present a framework for identifying topologically distinct band-structures for all 3D space groups.

Lattice-matched heterojunctions between topological and normal insulators: A first-principles study

NASA Astrophysics Data System (ADS)

Lee, Hyungjun; Yazyev, Oleg V.

2017-02-01

Gapless boundary modes at the interface between topologically distinct regions are one of the most salient manifestations of topology in physics. Metallic boundary states of time-reversal-invariant topological insulators (TIs), a realization of topological order in condensed matter, have been of much interest not only due to such a fundamental nature, but also due to their practical significance. These boundary states are immune to backscattering and localization owing to their topological origin, thereby opening up the possibility to tailor them for potential uses in spintronics and quantum computing. The heterojunction between a TI and a normal insulator (NI) is a representative playground for exploring such a topologically protected metallic boundary state and expected to constitute a building block for future electronic and spintronic solid-state devices based on TIs. Here, we report a first-principles study of two experimentally realized lattice-matched heterojunctions between TIs and NIs, Bi2Se3 (0001)/InP(111) and Bi2Te3 (0001)/BaF2(111). We evaluate the band offsets at these interfaces from many-body perturbation theory within the G W approximation as well as density-functional theory. Furthermore, we investigate the topological interface states, demonstrating that at these lattice-matched heterointerfaces, they are strictly localized and their helical spin textures are as well preserved as those at the vacuum-facing surfaces. These results taken together may help in designing devices relying on spin-helical metallic boundary states of TIs.

Higher-order topological insulators and superconductors protected by inversion symmetry

NASA Astrophysics Data System (ADS)

Khalaf, Eslam

2018-05-01

We study surface states of topological crystalline insulators and superconductors protected by inversion symmetry. These fall into the category of "higher-order" topological insulators and superconductors which possess surface states that propagate along one-dimensional curves (hinges) or are localized at some points (corners) on the surface. We provide a complete classification of inversion-protected higher-order topological insulators and superconductors in any spatial dimension for the 10 symmetry classes by means of a layer construction. We discuss possible physical realizations of such states starting with a time-reversal-invariant topological insulator (class AII) in three dimensions or a time-reversal-invariant topological superconductor (class DIII) in two or three dimensions. The former exhibits one-dimensional chiral or helical modes propagating along opposite edges, whereas the latter hosts Majorana zero modes localized to two opposite corners. Being protected by inversion, such states are not pinned to a specific pair of edges or corners, thus offering the possibility of controlling their location by applying inversion-symmetric perturbations such as magnetic field.

Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

DOE PAGES

Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; ...

2016-01-14

We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

Triply degenerate nodal points and topological phase transitions in NaCu3Te2

NASA Astrophysics Data System (ADS)

Xia, Yunyouyou; Li, Gang

2017-12-01

Quasiparticle excitations of free electrons in condensed-matter physics, characterized by the dimensionality of the band crossing, can find their elementary-particle analogs in high-energy physics, such as Majorana, Weyl, and Dirac fermions, while crystalline symmetry allows more quasiparticle excitations and exotic fermions to emerge. Using symmetry analysis and ab initio calculations, we propose that the three-dimensional honeycomb crystal NaCu3Te2 hosts triply degenerate nodal points (TDNPs) residing at the Fermi level. Furthermore, in this system we find a tunable phase transition between a trivial insulator, a TDNP phase, and a weak topological insulator (TI), triggered by a symmetry-allowed perturbation and the spin-orbital coupling (SOC). Such a topological nontrivial ternary compound not only serves as a perfect candidate for studying three-component fermions, but also provides an excellent playground for understanding the topological phase transitions between TDNPs, TIs, and trivial insulators, which distinguishes this system from other TDNP candidates.

Bulk and edge spin transport in topological magnon insulators

NASA Astrophysics Data System (ADS)

Rückriegel, Andreas; Brataas, Arne; Duine, Rembert A.

2018-02-01

We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin current driven through a normal metal |topological magnon insulator |normal metal heterostructure by a spin accumulation imbalance between the metals, with and without random lattice defects. We show that bulk and edge transport are characterized by different length scales. This results in a characteristic system size where the magnon transport crosses over from being bulk dominated for small systems to edge dominated for larger systems. These findings are generic and relevant for topological transport in systems of nonconserved bosons.

STM studies of topological phase transition in (Bi,In)2Se3

NASA Astrophysics Data System (ADS)

Zhang, Wenhan; Wang, Xueyun; Cheong, Sang-Wook; Wu, Weida; Weida Wu Team; Sang-Wook Cheong Collaboration

Topological insulators (TI) are a class of materials with insulating bulk and metallic surface state, which is the result of band inversion induced by strong spin-orbit coupling (SOC). The transition from topological phase to non-topological phase is of great significance. In theory, topological phase transition is realized by tuning SOC strength. It is characterized by the process of gap closing and reopening. Experimentally it was observed in two systems: TlBi(S1-xSex)2 and (Bi1-xInx)2 Se3 where the transition is realized by varying isovalent elements doping concentration. However, none of the previous studies addressed the impact of disorder, which is inevitable in doped systems. Here, we present a systematic scanning tunneling microscopy/spectroscopy study on (Bi1-xInx)2 Se3 single crystals with different In concentrations across the transition. Our results reveal an electronic inhomogeneity due to the random distribution of In defects which locally suppress the topological surface states. Our study provides a new angle of understanding the topological transition in the presence of strong disorders. This work is supported by NSF DMR-1506618.

Atomic layer-by-layer thermoelectric conversion in topological insulator bismuth/antimony tellurides.

PubMed

Sung, Ji Ho; Heo, Hoseok; Hwang, Inchan; Lim, Myungsoo; Lee, Donghun; Kang, Kibum; Choi, Hee Cheul; Park, Jae-Hoon; Jhi, Seung-Hoon; Jo, Moon-Ho

2014-07-09

Material design for direct heat-to-electricity conversion with substantial efficiency essentially requires cooperative control of electrical and thermal transport. Bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3), displaying the highest thermoelectric power at room temperature, are also known as topological insulators (TIs) whose electronic structures are modified by electronic confinements and strong spin-orbit interaction in a-few-monolayers thickness regime, thus possibly providing another degree of freedom for electron and phonon transport at surfaces. Here, we explore novel thermoelectric conversion in the atomic monolayer steps of a-few-layer topological insulating Bi2Te3 (n-type) and Sb2Te3 (p-type). Specifically, by scanning photoinduced thermoelectric current imaging at the monolayer steps, we show that efficient thermoelectric conversion is accomplished by optothermal motion of hot electrons (Bi2Te3) and holes (Sb2Te3) through 2D subbands and topologically protected surface states in a geometrically deterministic manner. Our discovery suggests that the thermoelectric conversion can be interiorly achieved at the atomic steps of a homogeneous medium by direct exploiting of quantum nature of TIs, thus providing a new design rule for the compact thermoelectric circuitry at the ultimate size limit.

Gapless Andreev bound states in the quantum spin Hall insulator HgTe.

PubMed

Bocquillon, Erwann; Deacon, Russell S; Wiedenmann, Jonas; Leubner, Philipp; Klapwijk, Teunis M; Brüne, Christoph; Ishibashi, Koji; Buhmann, Hartmut; Molenkamp, Laurens W

2017-02-01

In recent years, Majorana physics has attracted considerable attention because of exotic new phenomena and its prospects for fault-tolerant topological quantum computation. To this end, one needs to engineer the interplay between superconductivity and electronic properties in a topological insulator, but experimental work remains scarce and ambiguous. Here, we report experimental evidence for topological superconductivity induced in a HgTe quantum well, a 2D topological insulator that exhibits the quantum spin Hall (QSH) effect. The a.c. Josephson effect demonstrates that the supercurrent has a 4π periodicity in the superconducting phase difference, as indicated by a doubling of the voltage step for multiple Shapiro steps. In addition, this response like that of a superconducting quantum interference device to a perpendicular magnetic field shows that the 4π-periodic supercurrent originates from states located on the edges of the junction. Both features appear strongest towards the QSH regime, and thus provide evidence for induced topological superconductivity in the QSH edge states.

Probing topological protection using a designer surface plasmon structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fei; Gao, Zhen; Shi, Xihang

Topological photonic states, inspired by robust chiral edge states in topological insulators, have recently been demonstrated in a few photonic systems, including an array of coupled on-chip ring resonators at communication wavelengths. However, the intrinsic difference between electrons and photons determines that the 'topological protection' in time-reversal-invariant photonic systems does not share the same robustness as its counterpart in electronic topological insulators. Here in a designer surface plasmon platform consisting of tunable metallic sub-wavelength structures, we construct photonic topological edge states and probe their robustness against a variety of defect classes, including some common time-reversal-invariant photonic defects that can breakmore » the topological protection, but do not exist in electronic topological insulators. Furthermore, this is also an experimental realization of anomalous Floquet topological edge states, whose topological phase cannot be predicted by the usual Chern number topological invariants.« less

Probing topological protection using a designer surface plasmon structure

DOE PAGES

Gao, Fei; Gao, Zhen; Shi, Xihang; ...

2016-05-20

Topological photonic states, inspired by robust chiral edge states in topological insulators, have recently been demonstrated in a few photonic systems, including an array of coupled on-chip ring resonators at communication wavelengths. However, the intrinsic difference between electrons and photons determines that the 'topological protection' in time-reversal-invariant photonic systems does not share the same robustness as its counterpart in electronic topological insulators. Here in a designer surface plasmon platform consisting of tunable metallic sub-wavelength structures, we construct photonic topological edge states and probe their robustness against a variety of defect classes, including some common time-reversal-invariant photonic defects that can breakmore » the topological protection, but do not exist in electronic topological insulators. Furthermore, this is also an experimental realization of anomalous Floquet topological edge states, whose topological phase cannot be predicted by the usual Chern number topological invariants.« less

Superconductivity bordering Rashba type topological transition

DOE PAGES

Jin, M. L.; Sun, F.; Xing, L. Y.; ...

2017-01-04

Strong spin orbital interaction (SOI) can induce unique quantum phenomena such as topological insulators, the Rashba effect, or p-wave superconductivity. Combining these three quantum phenomena into a single compound has important scientific implications. Here we report experimental observations of consecutive quantum phase transitions from a Rashba type topological trivial phase to topological insulator state then further proceeding to superconductivity in a SOI compound BiTeI tuned via pressures. The electrical resistivity measurement with V shape change signals the transition from a Rashba type topological trivial to a topological insulator phase at 2 GPa, which is caused by an energy gap closemore » then reopen with band inverse. Superconducting transition appears at 8 GPa with a critical temperature T C of 5.3 K. Structure refinements indicate that the consecutive phase transitions are correlated to the changes in the Bi–Te bond and bond angle as function of pressures. As a result, the Hall Effect measurements reveal an intimate relationship between superconductivity and the unusual change in carrier density that points to possible unconventional superconductivity.« less

Experimental studies on hybrid superconductor-topological insulator nanoribbon Josephson devices

NASA Astrophysics Data System (ADS)

Kayyalha, Morteza; Jauregui, Luis; Kazakov, Aleksander; Miotkowski, Ireneusz; Rokhinson, Leonid; Chen, Yong

The spin-helical topological surface states (TSS) of topological insulators in proximity with an s-wave superconductor are predicted to demonstrate signatures of topological superconductivity and host Majorana fermions. Here, we report on the observation of gate-tunable proximity-induced superconductivity in an intrinsic BiSbTeSe2 topological insulator nanoribbon (TINR) based Josephson junction (JJ) with Nb contacts. We observe a gate-tunable critical current (IC) with an anomalous behavior in the temperature (T) dependence of IC. We discuss various possible scenarios that could be relevant to this anomalous behavior, such as (i) the different temperature dependence of supercurrent generated by in-gap, where phase slip plays an important role, and out-of-gap Andreev bound states or (ii) the different critical temperatures associated with the top and bottom topological surface states. Our modeling of IC vs. T suggests the possible existence of one pair of in-gap Andreev bound states in our TINR. We have also studied the effects of magnetic fields on the critical current in our TINR Josephson junctions.

Cheshire charge in (3+1)-dimensional topological phases

NASA Astrophysics Data System (ADS)

Else, Dominic V.; Nayak, Chetan

2017-07-01

We show that (3 +1 ) -dimensional topological phases of matter generically support loop excitations with topological degeneracy. The loops carry "Cheshire charge": topological charge that is not the integral of a locally defined topological charge density. Cheshire charge has previously been discussed in non-Abelian gauge theories, but we show that it is a generic feature of all (3+1)-D topological phases (even those constructed from an Abelian gauge group). Indeed, Cheshire charge is closely related to nontrivial three-loop braiding. We use a dimensional reduction argument to compute the topological degeneracy of loop excitations in the (3 +1 ) -dimensional topological phases associated with Dijkgraaf-Witten gauge theories. We explicitly construct membrane operators associated with such excitations in soluble microscopic lattice models in Z2×Z2 Dijkgraaf-Witten phases and generalize this construction to arbitrary membrane-net models. We explain why these loop excitations are the objects in the braided fusion 2-category Z (2 VectGω) , thereby supporting the hypothesis that 2-categories are the correct mathematical framework for (3 +1 ) -dimensional topological phases.

Hidden-Symmetry-Protected Topological Semimetals on a Square Lattice

NASA Astrophysics Data System (ADS)

Hou, Jing-Min

2014-03-01

We study a two-dimensional fermionic square lattice, which supports the existence of two-dimensional Weyl semimetal, quantum anomalous Hall effect, and 2 π -flux topological semimetal in different parameter ranges. We show that the band degenerate points of the two-dimensional Weyl semimetal and 2 π -flux topological semimetal are protected by two distinct novel hidden symmetries, which both corresponds to antiunitary composite operations. When these hidden symmetries are broken, a gap opens between the conduction and valence bands, turning the system into a insulator. With appropriate parameters, a quantum anomalous Hall effect emerges. The degenerate point at the boundary between the quantum anomalous Hall insulator and trivial band insulator is also protected by the hidden symmetry. [PRL 111, 130403(2013)] This work was supported by the National Natural Science Foundation of China under Grants No. 11004028 and No. 11274061.

Simple mechanisms that impede the Berry phase identification from magneto-oscillations

NASA Astrophysics Data System (ADS)

Kuntsevich, A. Yu.; Shupletsov, A. V.; Minkov, G. M.

2018-05-01

The phase of quantum magneto-oscillations is often associated with the Berry phase and is widely used to argue in favor of topological nontriviality of the system (Berry phase 2 π n +π ). Nevertheless, the experimentally determined value may deviate from 2 π n +π arbitrarily, therefore more care should be made analyzing the phase of magneto-oscillations to distinguish trivial systems from nontrivial. In this paper we suggest two simple mechanisms dramatically affecting the experimentally observed value of the phase in three-dimensional topological insulators: (i) magnetic field dependence of the chemical potential, and (ii) possible nonuniformity of the system. These mechanisms are not limited to topological insulators and can be extended to other topologically trivial and nontrivial systems.

Photoinduced Chern insulating states in semi-Dirac materials

NASA Astrophysics Data System (ADS)

Saha, Kush

2016-08-01

Two-dimensional (2D) semi-Dirac materials are characterized by a quadratic dispersion in one direction and a linear dispersion along the orthogonal direction. We study the topological phase transition in such 2D systems in the presence of an electromagnetic field. We show that a Chern insulating state emerges in a semi-Dirac system with two gapless Dirac nodes in the presence of light. In particular, we show that the intensity of a circularly polarized light can be used as a knob to generate topological states with nonzero Chern number. In addition, for fixed intensity and frequency of the light, a semi-Dirac system with two gapped Dirac nodes with trivial band topology can reveal the topological transition as a function of polarization of the light.

Topological Materials: Weyl Semimetals

NASA Astrophysics Data System (ADS)

Yan, Binghai; Felser, Claudia

2017-03-01

Topological insulators and topological semimetals are both new classes of quantum materials, which are characterized by surface states induced by the topology of the bulk band structure. Topological Dirac or Weyl semimetals show linear dispersion around nodes, termed the Dirac or Weyl points, as the three-dimensional analog of graphene. We review the basic concepts and compare these topological states of matter from the materials perspective with a special focus on Weyl semimetals. The TaAs family is the ideal materials class to introduce the signatures of Weyl points in a pedagogical way, from Fermi arcs to the chiral magnetotransport properties, followed by hunting for the type-II Weyl semimetals in WTe2, MoTe2, and related compounds. Many materials are members of big families, and topological properties can be tuned. As one example, we introduce the multifunctional topological materials, Heusler compounds, in which both topological insulators and magnetic Weyl semimetals can be found. Instead of a comprehensive review, this article is expected to serve as a helpful introduction and summary by taking a snapshot of the quickly expanding field.

Disorder-driven topological phase transition in B i 2 S e 3 films

DOE PAGES

Brahlek, Matthew; Koirala, Nikesh; Salehi, Maryam; ...

2016-10-03

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi 2Se 3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that theremore » is a change in material’s topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.« less

Localized surface plasmon enhanced photothermal conversion in Bi2Se3 topological insulator nanoflowers

PubMed Central

Guozhi, Jia; Peng, Wang; Yanbang, Zhang; Kai, Chang

2016-01-01

Localized surface plasmons (LSP), the confined collective excitations of electrons in noble metal and doped semiconductor nanostructures, enhance greatly local electric field near the surface of the nanostructures and result in strong optical response. LSPs of ordinary massive electrons have been investigated for a long time and were used as basic ingredient of plasmonics and metamaterials. LSPs of massless Dirac electrons, which could result in novel tunable plasmonic metamaterials in the terahertz and infrared frequency regime, are relatively unexplored. Here we report for first time the observation of LSPs in Bi2Se3 topological insulator hierarchical nanoflowers, which are consisted of a large number of Bi2Se3 nanocrystals. The existence of LSPs can be demonstrated by surface enhanced Raman scattering and absorbance spectra ranging from ultraviolet to near-infrared. LSPs produce an enhanced photothermal effect stimulated by near-infrared laser. The excellent photothermal conversion effect can be ascribed to the existence of topological surface states, and provides us a new way for practical application of topological insulators in nanoscale heat source and cancer therapy. PMID:27172827

rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

2018-02-01

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

Localized surface plasmon enhanced photothermal conversion in Bi2Se3 topological insulator nanoflowers.

PubMed

Guozhi, Jia; Peng, Wang; Yanbang, Zhang; Kai, Chang

2016-05-12

Localized surface plasmons (LSP), the confined collective excitations of electrons in noble metal and doped semiconductor nanostructures, enhance greatly local electric field near the surface of the nanostructures and result in strong optical response. LSPs of ordinary massive electrons have been investigated for a long time and were used as basic ingredient of plasmonics and metamaterials. LSPs of massless Dirac electrons, which could result in novel tunable plasmonic metamaterials in the terahertz and infrared frequency regime, are relatively unexplored. Here we report for first time the observation of LSPs in Bi2Se3 topological insulator hierarchical nanoflowers, which are consisted of a large number of Bi2Se3 nanocrystals. The existence of LSPs can be demonstrated by surface enhanced Raman scattering and absorbance spectra ranging from ultraviolet to near-infrared. LSPs produce an enhanced photothermal effect stimulated by near-infrared laser. The excellent photothermal conversion effect can be ascribed to the existence of topological surface states, and provides us a new way for practical application of topological insulators in nanoscale heat source and cancer therapy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

S. K. Kushwaha; Pletikosic, I.; Liang, T.

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method.more » We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

Visualizing ferromagnetic domains in magnetic topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wenbo; Gu, G. D.; Yang, Fang

2015-05-13

We report a systematic study of ferromagnetic domains in both single-crystal and thin-film specimens of magnetic topological insulators Cr doped (Bi 0.1Sb 0.9) 2Te 3 using magnetic force microscopy (MFM). The temperature and field dependences of MFM and in situ resistance data are consistent with previous bulk transport and magnetic characterization. Bubble-like ferromagnetic domains were observed in both single crystals and thin films. Significantly, smaller domain size (~500 nm) with narrower domain wall (~150 – 300 nm) was observed in thin films of magnetic topological insulators, likely due to vertical confinement effect. As a result, these results suggest that thinmore » films are more promising for visualization of chiral edge states.« less

Lateral topological crystalline insulator heterostructure

NASA Astrophysics Data System (ADS)

Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

2017-06-01

The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

Gapped boundary phases of topological insulators via weak coupling

DOE PAGES

Seiberg, Nathan; Witten, Edward

2016-11-04

The standard boundary state of a topological insulator in 3 + 1 dimensions has gapless charged fermions. We present model systems that reproduce this standard gapless boundary state in one phase, but also have gapped phases with topological order. Our models are weakly coupled and all the dynamics is explicit. We rederive some known boundary states of topological insulators and construct new ones. Consistency with the standard spin/charge relation of condensed matter physics places a nontrivial constraint on models

Josephson junctions of candidate topological crystalline insulator Pb1-xSnxTe

NASA Astrophysics Data System (ADS)

Snyder, Rodney; Trimble, Christie; Taylor, Patrick; Williams, James

Incorporating superconducting ordering through proximity effects in topological states of matter offers potential routes to novel excitations with properties beyond that of simple electrons. Topological crystalline insulators TCI offer alternative routes to topological states of matter with surface states of distinct character to those in more common 3d topological insulators. We report on the fabrication Josephson junctions using MBE-grown candidate TCI material Pb-doped SnTe as weak links and characterize the departures from conventional junctions using combined DC and RF techniques. Opportunities to create junction weak links from materials possessing electronic interactions will be discussed.

Topology and entanglement in quench dynamics

NASA Astrophysics Data System (ADS)

Chang, Po-Yao

2018-06-01

We classify the topology of the quench dynamics by homotopy groups. A relation between the topological invariant of a postquench order parameter and the topological invariant of a static Hamiltonian is shown in d +1 dimensions (d =1 ,2 ,3 ). The midgap states in the entanglement spectrum of the postquench states reveal their topological nature. When a trivial quantum state is under a sudden quench to a Chern insulator, the midgap states in the entanglement spectrum form rings. These rings are analogous to the boundary Fermi rings in the Hopf insulators. Finally, we show a postquench order parameter in 3+1 dimensions can be characterized by the second Chern number. The number of Dirac cones in the entanglement spectrum is equal to the second Chern number.

Low-loss and broadband anomalous Floquet topological insulator for airborne sound

NASA Astrophysics Data System (ADS)

Peng, Yu-Gui; Shen, Ya-Xi; Zhao, De-Gang; Zhu, Xue-Feng

2017-04-01

Anomalous Floquet topological insulators (AFIs) for airborne sound have recently been realized in experiments. However, the implemented version suffers from significant loss and narrowband due to thermal viscosity and dispersive coupling strength between unit-cells. Here, we propose a solution for realizing low-loss and broadband acoustic AFI. We show that the loss after passing through one unit-cell can be less than 2% for the topological edge states. It is also theoretically unveiled that in the frequency range of nearly unitary coupling (˜0.97 from 4.8 kHz to 7.0 kHz in our case), around 84% corresponds to topological bands. Our proposal may promote the application of large-dimension acoustic topological devices.

Disorder Effects in Charge Transport and Spin Response of Topological Insulators

NASA Astrophysics Data System (ADS)

Zhao, Lukas Zhonghua

Topological insulators are a class of solids in which the non-trivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity backscattering. First principle calculations predicted Bi2Te3, Sb2Te3 and Bi2Se3 to be three-dimensional (3D) topological insulators with a single Dirac cone on the surface. The topological surface states were subsequently observed by angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM). The investigations of charge transport through topological surfaces of 3D topological insulators, however, have faced a major challenge due to large charge carrier densities in the bulk donated by randomly distributed defects such as vacancies and antisites. This bulk disorder intermixes surface and bulk conduction channels, thereby complicating access to the low-energy (Dirac point) charge transport or magnetic response and resulting in the relatively low measured carrier mobilities. Moreover, charge inhomogeneity arising from bulk disorder can result in pronounced nanoscale spatial fluctuations of energy on the surface, leading to the formation of surface `puddles' of different carrier types. Great efforts have been made to combat the undesirable effects of disorder in 3D topological insulators and to reduce bulk carriers through chemical doping, nanostructure fabrication, and electric gating. In this work we have developed a new way to reduce bulk carrier densities using high-energy electron irradiation, thereby allowing us access to the topological surface quantum channels. We also found that disorder in 3D topological insulators can be beneficial. It can play an important part in enabling detection of unusual magnetic response from Dirac fermions and in uncovering new excitations, namely surface superconductivity in Dirac `puddles'. In Chapter 3 we show how by using differential magnetometry we could probe spin rotation in the 3D topological material family (Bi2Se 3, Bi2Te3 and Sb2Te3), and describe our detection of paramagnetic singularity in the magnetic susceptibility at low magnetic fields that persists up to room temperature, and which we have demonstrated to arise from the surfaces of the samples. The singularity is universal to the entire family, largely independent of the bulk carrier density, and consistent with the existence of electronic states near the spin-degenerate Dirac point of the 2D helical metal. The exceptional thermal stability of the signal points to an intrinsic surface cooling process, probably of thermoelectric organ, and establishes a sustainable platform for the singular field-tunable Dirac spin response. In Chapter 4 we describe our discovery of surface superconductivity in a hole-conducting topological insulator Sb2Te3 with transition to zero resistance induced through a minor tuning of growth chemistry that depletes bulk conduction channels. The depletion shifts Fermi energy towards the Dirac point as witnessed by over two orders of magnitude reduced bulk hole density and by the largest carrier mobility (~ 25,000 cm 2 V-1 s-1) found in any topological material. Direct evidence from transport, the unprecedentedly large diamagnetic screening, and the presence of up to ~ 25 meV gaps in differential conductance detected by scanning tunneling spectroscopy (STM) reveal the superconducting condensate to emerge first in surface puddles at unexpectedly high temperature, near 50 K. Percolative Josephson paths mediated by diffusing quasiparticles establish global phase coherence around 9 K. Rich structure of this state lends itself to manipulation and tuning via growth conditions and the topological material's parameters such as Fermi velocity and mean free path. In Chapter 5 we describe a new approach we have developed to reaching stable charge neutrality in 3D topological materials. The technique uses swift (~ 2.5 MeV energy) electron beams to compensate charged bulk defects and bring the Fermi level back into the bulk gap. By controlling the beam fluence we could tune bulk conductivity from p- (hole-like) to n-type (electron-like), crossing the Dirac point and back, while preserving the robust topological signatures of surface channels. We establish that at charge neutrality conductance has a two-dimensional (2D) character with a minimum value on the order of ten conductance quanta G=e 2 /h. From quantum interference contribution to 2D conductance we demonstrate in two systems, Bi2Te3 and Bi2Se 3, that at charge neutrality only two quantum channels corresponding to two topological surfaces are present. The charge neutrality point achieved using electron irradiation with long penetration range shows a route to intrinsic quantum transport of the topological states unconstrained by the bulk size.

A Design Method for Topologically Insulating Metamaterials

NASA Astrophysics Data System (ADS)

Matlack, Kathryn; Serra-Garcia, Marc; Palermo, Antonio; Huber, Sebastian; Daraio, Chiara

Topological insulators are a unique class of electronic materials that exhibit protected edge states that are insulating in the bulk, and immune to back-scattering and defects. Discrete models, such as mass-spring systems, provide a means to translate these properties, based on the quantum hall spin effect, to the mechanical domain. This talk will present how to engineer a 2D mechanical metamaterial that supports topologically-protected and defect-immune edge states, directly from the mass-spring model of a topological insulator. The design method uses combinatorial searches plus gradient-based optimizations to determine the configuration of the metamaterials building blocks that leads to the global behavior specified by the target mass-spring model. We use metamaterials with weakly coupled unit cells to isolate the dynamics within our frequency range of interest and to enable a systematic design process. This approach can generally be applied to implement behaviors of a discrete model directly in mechanical, acoustic, or photonic metamaterials within the weak-coupling regime. This work was partially supported by the ETH Postdoctoral Fellowship, and by the Swiss National Science Foundation.

Topological surface states interacting with bulk excitations in the Kondo insulator SmB6 revealed via planar tunneling spectroscopy.

PubMed

Park, Wan Kyu; Sun, Lunan; Noddings, Alexander; Kim, Dae-Jeong; Fisk, Zachary; Greene, Laura H

2016-06-14

Samarium hexaboride (SmB6), a well-known Kondo insulator in which the insulating bulk arises from strong electron correlations, has recently attracted great attention owing to increasing evidence for its topological nature, thereby harboring protected surface states. However, corroborative spectroscopic evidence is still lacking, unlike in the weakly correlated counterparts, including Bi2Se3 Here, we report results from planar tunneling that unveil the detailed spectroscopic properties of SmB6 The tunneling conductance obtained on the (001) and (011) single crystal surfaces reveals linear density of states as expected for two and one Dirac cone(s), respectively. Quite remarkably, it is found that these topological states are not protected completely within the bulk hybridization gap. A phenomenological model of the tunneling process invoking interaction of the surface states with bulk excitations (spin excitons), as predicted by a recent theory, provides a consistent explanation for all of the observed features. Our spectroscopic study supports and explains the proposed picture of the incompletely protected surface states in this topological Kondo insulator SmB6.

Topological surface states interacting with bulk excitations in the Kondo insulator SmB6 revealed via planar tunneling spectroscopy

PubMed Central

Park, Wan Kyu; Sun, Lunan; Noddings, Alexander; Kim, Dae-Jeong; Fisk, Zachary; Greene, Laura H.

2016-01-01

Samarium hexaboride (SmB6), a well-known Kondo insulator in which the insulating bulk arises from strong electron correlations, has recently attracted great attention owing to increasing evidence for its topological nature, thereby harboring protected surface states. However, corroborative spectroscopic evidence is still lacking, unlike in the weakly correlated counterparts, including Bi2Se3. Here, we report results from planar tunneling that unveil the detailed spectroscopic properties of SmB6. The tunneling conductance obtained on the (001) and (011) single crystal surfaces reveals linear density of states as expected for two and one Dirac cone(s), respectively. Quite remarkably, it is found that these topological states are not protected completely within the bulk hybridization gap. A phenomenological model of the tunneling process invoking interaction of the surface states with bulk excitations (spin excitons), as predicted by a recent theory, provides a consistent explanation for all of the observed features. Our spectroscopic study supports and explains the proposed picture of the incompletely protected surface states in this topological Kondo insulator SmB6. PMID:27233936

Topological insulator bismuth selenide as a theranostic platform for simultaneous cancer imaging and therapy.

PubMed

Li, Juan; Jiang, Fei; Yang, Bo; Song, Xiao-Rong; Liu, Yan; Yang, Huang-Hao; Cao, Dai-Rong; Shi, Wen-Rong; Chen, Guo-Nan

2013-01-01

Employing theranostic nanoparticles, which combine both therapeutic and diagnostic capabilities in one dose, has promise to propel the biomedical field toward personalized medicine. Here we investigate the theranostic properties of topological insulator bismuth selenide (Bi2Se3) in in vivo and in vitro system for the first time. We show that Bi2Se3 nanoplates can absorb near-infrared (NIR) laser light and effectively convert laser energy into heat. Such photothermal conversion property may be due to the unique physical properties of topological insulators. Furthermore, localized and irreversible photothermal ablation of tumors in the mouse model is successfully achieved by using Bi2Se3 nanoplates and NIR laser irradiation. In addition, we also demonstrate that Bi2Se3 nanoplates exhibit strong X-ray attenuation and can be utilized for enhanced X-ray computed tomography imaging of tumor tissue in vivo. This study highlights Bi2Se3 nanoplates could serve as a promising platform for cancer diagnosis and therapy.

Establishing non-Abelian topological order in Gutzwiller-projected Chern insulators via entanglement entropy and modular S-matrix

NASA Astrophysics Data System (ADS)

Zhang, Yi; Vishwanath, Ashvin

2013-04-01

We use entanglement entropy signatures to establish non-Abelian topological order in projected Chern-insulator wave functions. The simplest instance is obtained by Gutzwiller projecting a filled band with Chern number C=2, whose wave function may also be viewed as the square of the Slater determinant of a band insulator. We demonstrate that this wave function is captured by the SU(2)2 Chern-Simons theory coupled to fermions. This is established most persuasively by calculating the modular S-matrix from the candidate ground-state wave functions, following a recent entanglement-entropy-based approach. This directly demonstrates the peculiar non-Abelian braiding statistics of Majorana fermion quasiparticles in this state. We also provide microscopic evidence for the field theoretic generalization, that the Nth power of a Chern number C Slater determinant realizes the topological order of the SU(N)C Chern-Simons theory coupled to fermions, by studying the SU(2)3 (Read-Rezayi-type state) and the SU(3)2 wave functions. An advantage of our projected Chern-insulator wave functions is the relative ease with which physical properties, such as entanglement entropy and modular S-matrix, can be numerically calculated using Monte Carlo techniques.

Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb 1-xSn xTe

DOE PAGES

Zhong, Ruidan; He, Xugang; Schneeloch, J. A.; ...

2015-05-29

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb 1-xSn xTe compounds that manifest huge bulk resistivities together with evidence consistent with the topological character of the surface states for x ≳ 0.35, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determinemore » the resistivity for temperatures beyond 20 K.« less

Disorder-induced transitions in resonantly driven Floquet topological insulators

NASA Astrophysics Data System (ADS)

Titum, Paraj; Lindner, Netanel H.; Refael, Gil

2017-08-01

We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction bands. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasienergy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet topological Anderson insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator

NASA Astrophysics Data System (ADS)

Sato, T.; Segawa, Kouji; Kosaka, K.; Souma, S.; Nakayama, K.; Eto, K.; Minami, T.; Ando, Yoichi; Takahashi, T.

2011-11-01

The three-dimensional (3D) topological insulator is a novel quantum state of matter where an insulating bulk hosts a linearly dispersing surface state, which can be viewed as a sea of massless Dirac fermions protected by the time-reversal symmetry (TRS). Breaking the TRS by a magnetic order leads to the opening of a gap in the surface state, and consequently the Dirac fermions become massive. It has been proposed theoretically that such a mass acquisition is necessary to realize novel topological phenomena, but achieving a sufficiently large mass is an experimental challenge. Here we report an unexpected discovery that the surface Dirac fermions in a solid-solution system TlBi(S1-xSex)2 acquire a mass without explicitly breaking the TRS. We found that this system goes through a quantum phase transition from the topological to the non-topological phase, and, by tracing the evolution of the electronic states using the angle-resolved photoemission, we observed that the massless Dirac state in TlBiSe2 switches to a massive state before it disappears in the non-topological phase. This result suggests the existence of a condensed-matter version of the `Higgs mechanism' where particles acquire a mass through spontaneous symmetry breaking.

Extracting current induced spins from topological insulator wires: gate control of extracted spin polarization

NASA Astrophysics Data System (ADS)

Adagideli, Inanc

Spin-momentum locking featured by the surface states of 3D topological insulators (TIs) allows electrical generation of spin accumulations and provides a new avenue for spintronics applications. In this work, we explore how to extract electrically induced spins from topological insulator surfaces, where they are generated into topologically trivial metallic leads that are commonly used in conventional electronic devices. We first focus on an effective surface theory of current induced spin accumulation in topological insulators. Then we focus on a particular geometry: a metallic pocket attached to top and side faces of a 3D topological insulator quantum wire with a rectangular cross section, and explore spin extraction into topologically non-trivial materials. We find surprisingly that the doping in and/or a gate voltage applied to the metallic side pocket can control the direction of the extracted spin polarization opening the possibility for a spin transistor operation of these device geometries. We also perform numerical simulations of nonequilibrium spin accumulations generated by an applied bias in the same geometry and demonstrate the spin polarization control via applied gate voltages. Work funded by TUBITAK Grant No 114F163.

Momentum space view of the ultrafast dynamics of surface photocurrents on topological insulators

NASA Astrophysics Data System (ADS)

Kuroda, K.; Reimann, J.; Güdde, J.; Höfer, U.

2017-02-01

The Dirac-cone surface states of topological insulators are characterized by a chiral spin texture in k-space with the electron spin locked to its parallel momentum. Mid-infrared pump pulses can induce spin-polarized photocurrents in such a topological surface state by optical transitions between the occupied and unoccupied part of the Dirac cone. We monitor the ultrafast dynamics of the corresponding asymmetric electron population in momentum space directly by time- and angle-resolved two-photon photoemission (2PPE). The elastic scattering times of 2.5 ps deduced for Sb2Te3 corresponds to a mean-fee path of 0.75 μm in real space.

Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure

NASA Astrophysics Data System (ADS)

Kim, Joon-Seok; Juneja, Rinkle; Salke, Nilesh P.; Palosz, Witold; Swaminathan, Venkataraman; Trivedi, Sudhir; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung-Fu

2018-03-01

Topological insulators have been the subject of intense research interest due to their unique surface states that are topologically protected against scattering or defects. However, the relationship between the crystal structure and topological insulator state remains to be clarified. Here, we show the effects of hydrostatic pressure on the structural, vibrational, and topological properties of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 up to 45 GPa using X-ray diffraction and Raman spectroscopy in a diamond anvil cell, together with first-principles theoretical calculations. Two pressure-induced structural phase transitions were observed: from ambient rhombohedral R 3 ¯ m phase to a monoclinic C2/m phase at ˜13 GPa, and to a disordered I4/mmm phase at ˜22 GPa. In addition, the alloy undergoes several electronic transitions within the R 3 ¯ m phase: indirect to direct bulk band gap transition at ˜5.8 GPa, bulk gap closing with an appearance of Dirac semimetal (DSM) state at ˜8.2 GPa, and to a trivial semimetal state at ˜12.1 GPa. Anomalies in c/a ratio and Raman full width at half maximum that coincide with the DSM phase suggest the contribution of electron-phonon coupling to the transition. Compared to binary end members Bi2Te3, Bi2Se3, and Sb2Te3, the structural phase transition and anomaly were observed at higher pressures in Bi1.5Sb0.5Te1.8Se1.2. These results suggest that the topological transitions are precursors to the structural phase transitions.

Unconventional Josephson effect in hybrid superconductor-topological insulator devices.

PubMed

Williams, J R; Bestwick, A J; Gallagher, P; Hong, Seung Sae; Cui, Y; Bleich, Andrew S; Analytis, J G; Fisher, I R; Goldhaber-Gordon, D

2012-08-03

We report on transport properties of Josephson junctions in hybrid superconducting-topological insulator devices, which show two striking departures from the common Josephson junction behavior: a characteristic energy that scales inversely with the width of the junction, and a low characteristic magnetic field for suppressing supercurrent. To explain these effects, we propose a phenomenological model which expands on the existing theory for topological insulator Josephson junctions.

Laser-irradiated Kondo insulators: Controlling the Kondo effect and topological phases

NASA Astrophysics Data System (ADS)

Takasan, Kazuaki; Nakagawa, Masaya; Kawakami, Norio

2017-09-01

We investigate theoretically the nature of laser-irradiated Kondo insulators. Using Floquet theory and the slave-boson approach, we study a periodic Anderson model and derive an effective model that describes laser-irradiated Kondo insulators. In this model, we find two generic effects induced by laser light. One is dynamical localization, which suppresses hopping and hybridization. The other is laser-induced hopping and hybridization, which can be interpreted as synthetic spin-orbit coupling or a magnetic field. The first effect drastically changes the behavior of the Kondo effect. In particular, the Kondo effect under laser light qualitatively changes its character depending on whether the hybridization is on-site or off-site. The second effect triggers topological phase transitions. In topological Kondo insulators, linearly polarized laser light realizes phase transitions between trivial, weak topological, and strong topological Kondo insulators. Moreover, circularly polarized laser light breaks time-reversal symmetry and induces Weyl semimetallic phases. Our results make it possible to dynamically control the Kondo effect and topological phases in heavy-fermion systems. We also discuss experimental setups to detect the signatures.

Spin-polarized surface resonances accompanying topological surface state formation

PubMed Central

Jozwiak, Chris; Sobota, Jonathan A.; Gotlieb, Kenneth; Kemper, Alexander F.; Rotundu, Costel R.; Birgeneau, Robert J.; Hussain, Zahid; Lee, Dung-Hai; Shen, Zhi-Xun; Lanzara, Alessandra

2016-01-01

Topological insulators host spin-polarized surface states born out of the energetic inversion of bulk bands driven by the spin-orbit interaction. Here we discover previously unidentified consequences of band-inversion on the surface electronic structure of the topological insulator Bi2Se3. By performing simultaneous spin, time, and angle-resolved photoemission spectroscopy, we map the spin-polarized unoccupied electronic structure and identify a surface resonance which is distinct from the topological surface state, yet shares a similar spin-orbital texture with opposite orientation. Its momentum dependence and spin texture imply an intimate connection with the topological surface state. Calculations show these two distinct states can emerge from trivial Rashba-like states that change topology through the spin-orbit-induced band inversion. This work thus provides a compelling view of the coevolution of surface states through a topological phase transition, enabled by the unique capability of directly measuring the spin-polarized unoccupied band structure. PMID:27739428

Topological phase diagram and saddle point singularity in a tunable topological crystalline insulator

DOE PAGES

Neupane, Madhab; Xu, Su-Yang; Sankar, R.; ...

2015-08-20

Here we report the evolution of the surface electronic structure and surface material properties of a topological crystalline insulator (TCI), Pb 1more » $${-}$$xSnxSe, as a function of various material parameters including composition x, temperature T , and crystal structure. Our spectroscopic data demonstrate the electronic ground-state condition for the saddle point singularity, the tunability of surface chemical potential, and the surface states’ response to circularly polarized light. Our results show that each material parameter can tune the system between the trivial and topological phase in a distinct way, unlike that seen in Bi 2Se 3 and related compounds, leading to a rich topological phase diagram. Our systematic studies of the TCI Pb 1$${-}$$xSnxSe are a valuable materials guide to realize new topological phenomena.« less

Optical transitions in two-dimensional topological insulators with point defects

NASA Astrophysics Data System (ADS)

Sablikov, Vladimir A.; Sukhanov, Aleksei A.

2016-12-01

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon

NASA Astrophysics Data System (ADS)

Shen, Lei; Zeng, Minggang; Lu, Yunhao; Yang, Ming; Feng, Yuan Ping

2013-12-01

A two-step doping process, magnetic followed by charge or vice versa, is required to produce massive topological surface states (TSS) in topological insulators for many physics and device applications. Here, we demonstrate simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3 by first-principles calculations. Carbon substitution for Se (CSe) results in an opening of a sizable surface Dirac gap (up to 82 meV), while the Fermi level remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of CSe favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by surface states. Meanwhile, holes are introduced into the system by CSe. This dual function of carbon doping suggests a simple way to realize insulating massive TSS.

Robust transport signatures of topological superconductivity in topological insulator nanowires.

PubMed

de Juan, Fernando; Ilan, Roni; Bardarson, Jens H

2014-09-05

Finding a clear signature of topological superconductivity in transport experiments remains an outstanding challenge. In this work, we propose exploiting the unique properties of three-dimensional topological insulator nanowires to generate a normal-superconductor junction in the single-mode regime where an exactly quantized 2e2/h zero-bias conductance can be observed over a wide range of realistic system parameters. This is achieved by inducing superconductivity in half of the wire, which can be tuned at will from trivial to topological with a parallel magnetic field, while a perpendicular field is used to gap out the normal part, except for two spatially separated chiral channels. The combination of chiral mode transport and perfect Andreev reflection makes the measurement robust to moderate disorder, and the quantization of conductance survives to much higher temperatures than in tunnel junction experiments. Our proposal may be understood as a variant of a Majorana interferometer which is easily realizable in experiments.

Quantum phase transitions and phase diagram for a one-dimensional p-wave superconductor with an incommensurate potential.

PubMed

Cai, X

2014-04-16

The effect of the incommensurate potential is studied for the one-dimensional p-wave superconductor. It is determined by analyzing various properties, such as the superconducting gap, the long-range order of the correlation function, the inverse participation ratio and the Z2 topological invariant, etc. In particular, two important aspects of the effect are investigated: (1) as disorder, the incommensurate potential destroys the superconductivity and drives the system into the Anderson localized phase; (2) as a quasi-periodic potential, the incommensurate potential causes band splitting and turns the system with certain chemical potential into the band insulator phase. A full phase diagram is also presented in the chemical potential-incommensurate potential strength plane.

Coupling effect of topological states and Chern insulators in two-dimensional triangular lattices

NASA Astrophysics Data System (ADS)

Zhang, Jiayong; Zhao, Bao; Xue, Yang; Zhou, Tong; Yang, Zhongqin

2018-03-01

We investigate topological states of two-dimensional (2D) triangular lattices with multiorbitals. Tight-binding model calculations of a 2D triangular lattice based on px and py orbitals exhibit very interesting doubly degenerate energy points at different positions (Γ and K /K' ) in momentum space, with quadratic non-Dirac and linear Dirac band dispersions, respectively. Counterintuitively, the system shows a global topologically trivial rather than nontrivial state with consideration of spin-orbit coupling due to the "destructive interference effect" between the topological states at the Γ and K /K' points. The topologically nontrivial state can emerge by introducing another set of triangular lattices to the system (bitriangular lattices) due to the breakdown of the interference effect. With first-principles calculations, we predict an intrinsic Chern insulating behavior (quantum anomalous Hall effect) in a family of the 2D triangular lattice metal-organic framework of Co(C21N3H15) (TPyB-Co) from this scheme. Our results provide a different path and theoretical guidance for the search for and design of new 2D topological quantum materials.

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.

2015-02-01

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18-600 nm) of p-type topological insulator Bi2Te3 thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18-100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi2Te3 quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi2Te3 and are inherent to topological insulators.

Quasiparticle dynamics in reshaped helical Dirac cone of topological insulators

PubMed Central

Miao, Lin; Wang, Z. F.; Ming, Wenmei; Yao, Meng-Yu; Wang, Meixiao; Yang, Fang; Song, Y. R.; Zhu, Fengfeng; Fedorov, Alexei V.; Sun, Z.; Gao, C. L.; Liu, Canhua; Xue, Qi-Kun; Liu, Chao-Xing; Liu, Feng; Qian, Dong; Jia, Jin-Feng

2013-01-01

Topological insulators and graphene present two unique classes of materials, which are characterized by spin-polarized (helical) and nonpolarized Dirac cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in topological insulators. Here, we report the experimental observation of the renormalized quasiparticle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasiparticle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states. PMID:23382185

Quasiparticle dynamics in reshaped helical Dirac cone of topological insulators.

PubMed

Miao, Lin; Wang, Z F; Ming, Wenmei; Yao, Meng-Yu; Wang, Meixiao; Yang, Fang; Song, Y R; Zhu, Fengfeng; Fedorov, Alexei V; Sun, Z; Gao, C L; Liu, Canhua; Xue, Qi-Kun; Liu, Chao-Xing; Liu, Feng; Qian, Dong; Jia, Jin-Feng

2013-02-19

Topological insulators and graphene present two unique classes of materials, which are characterized by spin-polarized (helical) and nonpolarized Dirac cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in topological insulators. Here, we report the experimental observation of the renormalized quasiparticle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi(2)Te(3) substrate from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasiparticle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi(2)Te(3) film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi(2)Se(3), where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi(2)Se(3) are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states.

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

NASA Astrophysics Data System (ADS)

Kally, James; Lv, Yang; Zhang, Delin; Lee, Joon Sue; Samarth, Nitin; Wang, Jian-Ping; Department of Electrical; Computer Engineering, University of Minnesota, Minneapolis Collaboration; Department of Physics, Pennsylvania State University Collaboration

The surface states of topological insulators offer a potentially very efficient way to generate spins and spin-orbit torques to magnetic moments in proximity. The switching by spin-orbit torque itself only requires two terminals so that a charge current can be applied. However, a third terminal with additional magnetic tunneling junction structure is needed to sense the magnetization state if such devices are used for memory and logic applications. The recent discovery of unidirectional spin Hall magnetoresistance in heavy metal/ferromagnetic and topological insulator/magnetically doped topological insulator systems offers an alternative way to sense magnetization while still keeping the number of terminals to minimal two. The unidirectional spin Hall magnetoresistance in topological insulator/strong ferromagnetic layer heterostructure system has yet not been reported. In this work, we report our experimental observations of such magnetoresistance. It is found to be present and comparable to the best result of the previous reported Ta/Co systems in terms of magnetoresistance per current density per total resistance.

Record surface state mobility and quantum Hall effect in topological insulator thin films via interface engineering

DOE PAGES

Koirala, Nikesh; Han, Myung -Geun; Brahlek, Matthew; ...

2015-11-19

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In 2Se 3/(Bi 0.5In 0.5) 2Se 3 heterostructure, we introduce a quantum generation of Bi 2Se 3 films with an order of magnitude enhanced mobilities than before. Furthermore, this scheme has led to the first observation of the quantum Hallmore » effect in Bi 2Se 3.« less

Topological crystalline materials: General formulation, module structure, and wallpaper groups

NASA Astrophysics Data System (ADS)

Shiozaki, Ken; Sato, Masatoshi; Gomi, Kiyonori

2017-06-01

We formulate topological crystalline materials on the basis of the twisted equivariant K theory. Basic ideas of the twisted equivariant K theory are explained with application to topological phases protected by crystalline symmetries in mind, and systematic methods of topological classification for crystalline materials are presented. Our formulation is applicable to bulk gapful topological crystalline insulators/superconductors and their gapless boundary and defect states, as well as bulk gapless topological materials such as Weyl and Dirac semimetals, and nodal superconductors. As an application of our formulation, we present a complete classification of topological crystalline surface states, in the absence of time-reversal invariance. The classification works for gapless surface states of three-dimensional insulators, as well as full gapped two-dimensional insulators. Such surface states and two-dimensional insulators are classified in a unified way by 17 wallpaper groups, together with the presence or the absence of (sublattice) chiral symmetry. We identify the topological numbers and their representations under the wallpaper group operation. We also exemplify the usefulness of our formulation in the classification of bulk gapless phases. We present a class of Weyl semimetals and Weyl superconductors that are topologically protected by inversion symmetry.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

NASA Astrophysics Data System (ADS)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Sizable band gap in organometallic topological insulator

NASA Astrophysics Data System (ADS)

Derakhshan, V.; Ketabi, S. A.

2017-01-01

Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.

Prediction of weak topological insulators in layered semiconductors.

PubMed

Yan, Binghai; Müchler, Lukas; Felser, Claudia

2012-09-14

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

Transport and magnetic properties in topological materials

NASA Astrophysics Data System (ADS)

Liang, Tian

The notion of topology has been the central topic of the condensed matter physics in recent years, ranging from 2D quantum hall (QH) and quantum spin hall (QSH) states, 3D topological insulators (TIs), topological crystalline insulators (TCIs), 3D Dirac/Weyl semimetals, and topological superconductors (TSCs) etc. The key notion of the topological materials is the bulk edge correspondence, i.e., in order to preserve the symmetry of the whole system (bulk+edge), edge states must exist to counter-compensate the broken symmetry of the bulk. Combined with the fact that the bulk is topologically protected, the edge states are robust due to the bulk edge correspondence. This leads to interesting phenomena of chiral edge states in 2D QH, helical edge states in 2D QSH, "parity anomaly'' (time reversal anomaly) in 3D TI, helical edge states in the mirror plane of TCI, chiral anomaly in Dirac/Weyl semimetals, Majorana fermions in the TSCs. Transport and magnetic properties of topological materials are investigated to yield intriguing phenomena. For 3D TI Bi1.1Sb0.9Te 2S, anomalous Hall effect (AHE) is observed, and for TCI Pb1-x SnxSe, Seebeck/Nernst measurements reveal the anomalous sign change of Nernst signals as well as the massive Dirac fermions. Ferroelectricity and pressure measurements show that TCI Pb1-xSnxTe undergoes quantum phase transition (QPT) from trivial insulator through Weyl semimetal to anomalous insulator. Dirac semimetals Cd3As2, Na 3Bi show interesting results such as the ultrahigh mobility 10 7cm2V-1s-1 protected from backscattering at zero magnetic field, as well as anomalous Nernst effect (ANE) for Cd3As2, and the negative longitudinal magnetoresistance (MR) due to chiral anomaly for Na3Bi. In-plane and out-of-plane AHE are observed for semimetal ZrTe5 by in-situ double-axes rotation measurements. For interacting system Eu2Ir2O7, full angle torque magnetometry measurements reveal the existence of orthogonal magnetization breaking the symmetry of handedness, as well as additional order parameter which breaks the underlying lattice symmetry. Heat capacity measurements for CoNb2O6 detect the neutral gapless fermion-like excitations near the quantum critical point (QCP) under transverse magnetic field. The implications of these phenomena are discussed.

Intrinsic Topological Insulator Bi1.5Sb0.5Te3-xSex Thin Crystals

NASA Astrophysics Data System (ADS)

Wang, Wei; Li, Li; Zou, Wenqin; He, Liang; Song, Fengqi; Zhang, Rong; Wu, Xiaoshan; Zhang, Fengming

2015-01-01

The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface states with an insulating bulk. Scientists have identified an optimized composition of Bi1.5Sb0.5Te1.7Se1.3 with the highest resistivity reported. But the physics that drive to this composition remains unclear. Here we report the crystal structure and the magneto-transport properties of Bi1.5Sb0.5Te3-xSex (BSTS) series. A correlation between the structure and the physical properties has been revealed. We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity. On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector.

PubMed

Das, Biswajit; Das, Nirmalya S; Sarkar, Samrat; Chatterjee, Biplab K; Chattopadhyay, Kalyan K

2017-07-12

Chemically derived topological insulator Bi 2 Se 3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi 2 Se 3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current-voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I + /I - ) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 10 13 Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi 2 Se 3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.

Chiral topological insulator of magnons

NASA Astrophysics Data System (ADS)

Li, Bo; Kovalev, Alexey A.

2018-05-01

We propose a magnon realization of 3D topological insulator in the AIII (chiral symmetry) topological class. The topological magnon gap opens due to the presence of Dzyaloshinskii-Moriya interactions. The existence of the topological invariant is established by calculating the bulk winding number of the system. Within our model, the surface magnon Dirac cone is protected by the sublattice chiral symmetry. By analyzing the magnon surface modes, we confirm that the backscattering is prohibited. By weakly breaking the chiral symmetry, we observe the magnon Hall response on the surface due to opening of the gap. Finally, we show that by changing certain parameters, the system can be tuned between the chiral topological insulator, three-dimensional magnon anomalous Hall, and Weyl magnon phases.

Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity (6 Ω cm)

NASA Astrophysics Data System (ADS)

Xiong, Jun; Petersen, A. C.; Qu, Dongxia; Hor, Y. S.; Cava, R. J.; Ong, N. P.

2012-02-01

We report the observation of prominent Shubnikov-de Haas oscillations in a Topological Insulator, Bi2Te2Se, with large bulk resistivity (6 Ω cm at 4 K). By fitting the SdH oscillations, we infer a large metallicity parameter kFℓ=41, with a surface mobility (μs∼2800 cm2/V s) much larger than the bulk mobility (μb∼50 cm2/V s). The plot of the index fields Bν vs. filling factor ν shows a {1}/{2}-shift, consistent with massless, Dirac states.

Real-space characterization of reactivity towards water at the B i 2 T e 3 (111) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Kai-Wen; Ding, Ding; Yang, Chao-Long

2016-06-01

Surface reactivity is important in modifying the physical and chemical properties of surface-sensitive materials, such as the topological insulators. Even though many studies addressing the reactivity of topological insulators towards external gases have been reported, it is still under heavy debate whether and how the topological insulators react with H2O. Here, we employ scanning tunneling microscopy to directly probe the surface reaction of Bi2Te3 towards H2O. Surprisingly, it is found that only the top quintuple layer is reactive to H2O, resulting in a hydrated Bi bilayer as well as some Bi islands, which passivate the surface and prevent subsequent reaction.more » A reaction mechanism is proposed with H2Te and hydrated Bi as the products. Unexpectedly, our study indicates that the reaction with water is intrinsic and not dependent on any surface defects. Since water inevitably exists, these findings provide key information when considering the reactions of Bi2Te3 with residual gases or atmosphere.« less

Self-organized pseudo-graphene on grain boundaries in topological band insulators

NASA Astrophysics Data System (ADS)

Slager, Robert-Jan; Juričić, Vladimir; Lahtinen, Ville; Zaanen, Jan

2016-06-01

Semimetals are characterized by nodal band structures that give rise to exotic electronic properties. The stability of Dirac semimetals, such as graphene in two spatial dimensions, requires the presence of lattice symmetries, while akin to the surface states of topological band insulators, Weyl semimetals in three spatial dimensions are protected by band topology. Here we show that in the bulk of topological band insulators, self-organized topologically protected semimetals can emerge along a grain boundary, a ubiquitous extended lattice defect in any crystalline material. In addition to experimentally accessible electronic transport measurements, these states exhibit a valley anomaly in two dimensions influencing edge spin transport, whereas in three dimensions they appear as graphenelike states that may exhibit an odd-integer quantum Hall effect. The general mechanism underlying these semimetals—the hybridization of spinon modes bound to the grain boundary—suggests that topological semimetals can emerge in any topological material where lattice dislocations bind localized topological modes.

Spin transport in normal metal/insulator/topological insulator coupled to ferromagnetic insulator structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kondo, Kenji, E-mail: kkondo@es.hokudai.ac.jp

In this study, we investigate the spin transport in normal metal (NM)/insulator (I)/topological insulator (TI) coupled to ferromagnetic insulator (FI) structures. In particular, we focus on the barrier thickness dependence of the spin transport inside the bulk gap of the TI with FI. The TI with FI is described by two-dimensional (2D) Dirac Hamiltonian. The energy profile of the insulator is assumed to be a square with barrier height V and thickness d along the transport-direction. This structure behaves as a tunnel device for 2D Dirac electrons. The calculation is performed for the spin conductance with changing the barrier thicknessmore » and the components of magnetization of FI layer. It is found that the spin conductance decreases with increasing the barrier thickness. Also, the spin conductance is strongly dependent on the polar angle θ, which is defined as the angle between the axis normal to the FI and the magnetization of FI layer. These results indicate that the structures are promising candidates for novel tunneling magnetoresistance devices.« less

Non-Abelian string and particle braiding in topological order: Modular SL (3 ,Z ) representation and (3 +1 ) -dimensional twisted gauge theory

NASA Astrophysics Data System (ADS)

Wang, Juven C.; Wen, Xiao-Gang

2015-01-01

String and particle braiding statistics are examined in a class of topological orders described by discrete gauge theories with a gauge group G and a 4-cocycle twist ω4 of G 's cohomology group H4(G ,R /Z ) in three-dimensional space and one-dimensional time (3 +1 D ) . We establish the topological spin and the spin-statistics relation for the closed strings and their multistring braiding statistics. The 3 +1 D twisted gauge theory can be characterized by a representation of a modular transformation group, SL (3 ,Z ) . We express the SL (3 ,Z ) generators Sx y z and Tx y in terms of the gauge group G and the 4-cocycle ω4. As we compactify one of the spatial directions z into a compact circle with a gauge flux b inserted, we can use the generators Sx y and Tx y of an SL (2 ,Z ) subgroup to study the dimensional reduction of the 3D topological order C3 D to a direct sum of degenerate states of 2D topological orders Cb2 D in different flux b sectors: C3 D=⊕bCb2 D . The 2D topological orders Cb2 D are described by 2D gauge theories of the group G twisted by the 3-cocycle ω3 (b ), dimensionally reduced from the 4-cocycle ω4. We show that the SL (2 ,Z ) generators, Sx y and Tx y, fully encode a particular type of three-string braiding statistics with a pattern that is the connected sum of two Hopf links. With certain 4-cocycle twists, we discover that, by threading a third string through two-string unlink into a three-string Hopf-link configuration, Abelian two-string braiding statistics is promoted to non-Abelian three-string braiding statistics.

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

PubMed Central

Chiatti, Olivio; Riha, Christian; Lawrenz, Dominic; Busch, Marco; Dusari, Srujana; Sánchez-Barriga, Jaime; Mogilatenko, Anna; Yashina, Lada V.; Valencia, Sergio; Ünal, Akin A.; Rader, Oliver; Fischer, Saskia F.

2016-01-01

Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities (∼1019 cm−3) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi2Se3 single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability. PMID:27270569

Quasiparticle band gap in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Nechaev, I. A.; Chulkov, E. V.

2013-10-01

We present a theoretical study of dispersion of states that form the bulk band-gap edges in the three-dimensional topological insulator Bi2Te3. Within density functional theory, we analyze the effect of atomic positions varied within the error range of the available experimental data and approximation chosen for the exchange-correlation functional on the bulk band gap and k-space location of valence- and conduction-band extrema. For each set of the positions with different exchange-correlation functionals, we show how many-body corrections calculated within a one-shot GW approach affect the mentioned characteristics of electronic structure of Bi2Te3. We thus also illustrate to what degree the one-shot GW results are sensitive to the reference one-particle band structure in the case of bismuth telluride. We found that for this topological insulator the GW corrections enlarge the fundamental band gap and for certain atomic positions and reference band structure bring its value in close agreement with experiment.

Ambipolar surface state thermoelectric power of topological insulator Bi2Se3.

PubMed

Kim, Dohun; Syers, Paul; Butch, Nicholas P; Paglione, Johnpierre; Fuhrer, Michael S

2014-01-01

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near the charge neutrality point and at low temperatures, the gate-dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ∼0.5 × 10(12) cm(-2) per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low-dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three-dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

Sn-doped Bi1.1Sb0.9Te2S: An ideal bulk topological insulator

NASA Astrophysics Data System (ADS)

Kushwaha, Sk; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, Sh; Tian, Y.; Zhao, H.; Burch, Ks; Lin, J.; Wang, W.; Ji, H.; Fedorov, Av; Yazdani, A.; Ong, Np; Valla, T.; Cava, Rj

In the recent decade the topological insulators have been of significant importance for the condensed matter community. However, so far no real materials could fulfill all the requirements. Here, we present the Bridgman growth of slightly Sn-doped Bi1.1Sb0.9Te2S (with bulk band gap of 350) single crystals and characterization by electronic transport, STM and ARPES. The results on the crystals exhibit an intrinsic semiconducting behavior with the Fermi level and Dirac energies lie in bulk gap and high quality 2D surface states are detangled from the bulk states, and it fulfils all the requirements to be an ideal topological insulator. ARO MURI W911NF-12-1-0461; ARO W911NF-12-1-0461; MRSEC NSF-DMR-1420541; LBNL & BNL DE-AC02-05CH11231 & DE-SC0012704; DOE Office of Science DE-AC02-06CH11357; NSF DMR-1410846.

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

NASA Astrophysics Data System (ADS)

Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

2018-04-01

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

Electronic transport in bismuth selenide in the topological insulator regime

NASA Astrophysics Data System (ADS)

Kim, Dohun

The 3D topological insulators (TIs) have an insulating bulk but spin-momentum coupled metallic surface states stemming from band inversion due to strong spin-orbit interaction, whose existence is guaranteed by the topology of the band structure of the insulator. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate clear signature of the STI due to high level of bulk conduction. In this thesis, I present experimental results on the transport properties of TI material Bi2Se3 in the absence of bulk conduction (TI regime), achieved by applying novel p-type doping methods. Field effect transistors consisting of thin (thickness: 5-17 nm) Bi2Se3 are fabricated by mechanical exfoliation of single crystals, and a combination of conventional dielectric (300 nm thick SiO2) and electrochemical or chemical gating methods are used to move the Fermi energy through the surface Dirac point inside bulk band gap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be 60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se 3, which will have implications for topological electronic devices operating at room temperature. Along with semi-classical Boltzmann transport, I also discuss 2D weak anti-localization (WAL) behavior of the topological surface states. By investigating gate-tuned WAL behavior in thin (5-17 nm) TI films, I show that WAL in the TI regime is extraordinarily sensitive to the hybridization induced quantum mechanical tunneling between top and bottom topological surfaces, and interplay of phase coherence time and inter-surface tunneling time results in a crossover from two decoupled (top and bottom) symplectic 2D metal surfaces to a coherently coupled single channel. Furthermore, a complete suppression of WAL is observed in the 5 nm thick Bi2Se 3 film which was found to occur when the hybridization gap becomes comparable to the disorder strength.

Design principles for HgTe based topological insulator devices

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Povolotskyi, Michael; Klimeck, Gerhard

2013-07-01

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier (CdTe) and well-region (HgTe) are altered by replacing them with the alloy CdxHg1-xTe of various stoichiometries, the critical width can be changed. The critical quantum well width is shown to depend on temperature, applied stress, growth directions, and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

Infrared studies of topological insulator systems

NASA Astrophysics Data System (ADS)

Post, Kirk; Chapler, Brian; Schafgans, Alex; Liu, Mengkun; Wu, Jih-Sheng; Richardella, Anthony; Lee, Joon Sue; Reijnders, Anjan; Lee, Yun Sang; He, Liang; Kou, Xufeng; Novak, Mario; Taskin, Alexey; Segawa, Kouji; Goldflam, Michael; Stinson, H. Theodore; Qi, Xiao Liang; Burch, Kenneth; Wang, Kang; Fogler, Michael; Samarth, Nitin; Ando, Yoichi; Basov, Dimitri

The theoretical prediction, and subsequent experimental realization, of topological insulator (TI) systems, has vaulted this new class of materials to the vanguard of condensed matter physics. Since their discovery, we have carried out a number of infrared studies on various TI systems, including Bi2Se3, Bi1-xSbx, and Bi2-xSbxTe3-ySey crystals as well as Bi2Se3 and (Bi,Sb)2Te3 thin films. A key element of these works is the revelation that the infrared response of Bi1-xSbx crystals and (Bi,Sb)2Te3 thin films possess a significant, or even dominant, component from the topologically protected surface states. I will review these works and discuss future prospects of measuring the surface state response through optical spectroscopy techniques

Engineering three-dimensional topological insulators in Rashba-type spin-orbit coupled heterostructures

PubMed Central

Das, Tanmoy; Balatsky, A. V.

2013-01-01

Topological insulators represent a new class of quantum phase defined by invariant symmetries and spin-orbit coupling that guarantees metallic Dirac excitations at its surface. The discoveries of these states have sparked the hope of realizing non-trivial excitations and novel effects such as a magnetoelectric effect and topological Majorana excitations. Here we develop a theoretical formalism to show that a three-dimensional topological insulator can be designed artificially via stacking bilayers of two-dimensional Fermi gases with opposite Rashba-type spin-orbit coupling on adjacent layers, and with interlayer quantum tunneling. We demonstrate that in the stack of bilayers grown along a (001)-direction, a non-trivial topological phase transition occurs above a critical number of Rashba bilayers. In the topological phase, we find the formation of a single spin-polarized Dirac cone at the -point. This approach offers an accessible way to design artificial topological insulators in a set up that takes full advantage of the atomic layer deposition approach. This design principle is tunable and also allows us to bypass limitations imposed by bulk crystal geometry. PMID:23739724

Fully gapped superconductivity in In-doped topological crystalline insulator Pb 0.5Sn 0.5Te

DOE PAGES

Du, Guan; Gu, G. D.; Du, Zengyi; ...

2015-07-27

In this study, superconductors derived from topological insulators and topological crystalline insulators by chemical doping have long been considered to be candidates as topological superconductors. Pb 0.5Sn 0.5Te is a topological crystalline insulator with mirror symmetry protected surface states on (001)-, (011)-, and (111)-oriented surfaces. The superconductor (Pb 0.5Sn 0.5) 0.7In 0.3Te is produced by In doping in Pb 0.5Sn 0.5Te, and is thought to be a topological superconductor. Here we report scanning tunneling spectroscopy measurements of the superconducting state as well as the superconducting energy gap in (Pb 0.5Sn 0.5) 0.7In 0.3Te on a (001)-oriented surface. The spectrum canmore » be well fitted by an anisotropic s-wave gap function of Δ = 0.72 + 0.18cos4θ meV using Dynes model. The results show that the superconductor seems to be a fully gapped one without any in-gap states, in contradiction with the expectation of a topological superconductor.« less

Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions.

PubMed

Mashhadi, Soudabeh; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus

2017-01-11

Tuning the electron and phonon transport properties of thermoelectric materials by nanostructuring has enabled improving their thermopower figure of merit. Three-dimensional topological insulators, including many bismuth chalcogenides, attract increasing attention for this purpose, as their topologically protected surface states are promising to further enhance the thermoelectric performance. While individual bismuth chalcogenide nanostructures have been studied with respect to their photothermoelectric properties, nanostructured p-n junctions of these compounds have not yet been explored. Here, we experimentally investigate the room temperature thermoelectric conversion capability of lateral heterostructures consisting of two different three-dimensional topological insulators, namely, the n-type doped Bi 2 Te 2 Se and the p-type doped Sb 2 Te 3 . Scanning photocurrent microscopy of the nanoplatelets reveals efficient thermoelectric conversion at the p-n heterojunction, exploiting hot carriers of opposite sign in the two materials. From the photocurrent data, a Seebeck coefficient difference of ΔS = 200 μV/K was extracted, in accordance with the best values reported for the corresponding bulk materials. Furthermore, it is in very good agreement with the value of ΔS = 185 μV/K obtained by DFT calculation taking into account the specific doping levels of the two nanostructured components.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brahlek, Matthew; Koirala, Nikesh; Salehi, Maryam

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi 2Se 3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that theremore » is a change in material’s topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.« less

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE PAGES

Si, W.; Zhang, C.; Wu, L.; ...

2015-09-01

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more » With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, Weidong, E-mail: wds@bnl.gov, E-mail: qiangli@bnl.gov; Zhang, Cheng; Wu, Lijun

2015-08-31

Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF{sub 2} crystalline substrates, respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk. Withmore » large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

Structure-Dependent Optical Properties of Self-Organized Bi2Se3 Nanostructures: From Nanocrystals to Nanoflakes.

PubMed

Yang, Shang-Dong; Yang, Liao; Zheng, Yu-Xiang; Zhou, Wen-Jie; Gao, Meng-Yu; Wang, Song-You; Zhang, Rong-Jun; Chen, Liang-Yao

2017-08-30

Bismuth selenide (Bi 2 Se 3 ), with a wide bulk band gap and single massless Dirac cone at the surface, is a promising three-dimensional topological insulator. Bi 2 Se 3 possesses gapless surface states and an insulator-like bulk band gap as a new type of quantum matter. Different Bi 2 Se 3 nanostructures were prepared using electron beam evaporation with high production efficiency. Structural investigations by energy-dispersive X-ray analysis, scanning electron microscopy, and X-ray diffraction revealed the sample stoichiometries and the structural transition mechanism from nanocrystals to nanoflakes. The optical properties systematically probed and analyzed by spectroscopic ellipsometry showed strong dependence on the nanostructures and were also predicted to have structure-modifiable technological prospects. The optical parameters, plasma frequencies, scattering rates of the free electrons, and optical band gaps were related to the topological properties of the Bi 2 Se 3 nanostructures via light-matter interactions, offering new opportunities and approaches for studies on topological insulators and spintronics. The high-quality Bi 2 Se 3 nanostructures provide advantages in exploring novel physics and exploiting prospective applications.

Manipulating topological-insulator properties using quantum confinement

NASA Astrophysics Data System (ADS)

Kotulla, M.; Zülicke, U.

2017-07-01

Recent discoveries have spurred the theoretical prediction and experimental realization of novel materials that have topological properties arising from band inversion. Such topological insulators are insulating in the bulk but have conductive surface or edge states. Topological materials show various unusual physical properties and are surmised to enable the creation of exotic Majorana-fermion quasiparticles. How the signatures of topological behavior evolve when the system size is reduced is interesting from both a fundamental and an application-oriented point of view, as such understanding may form the basis for tailoring systems to be in specific topological phases. This work considers the specific case of quantum-well confinement defining two-dimensional layers. Based on the effective-Hamiltonian description of bulk topological insulators, and using a harmonic-oscillator potential as an example for a softer-than-hard-wall confinement, we have studied the interplay of band inversion and size quantization. Our model system provides a useful platform for systematic study of the transition between the normal and topological phases, including the development of band inversion and the formation of massless-Dirac-fermion surface states. The effects of bare size quantization, two-dimensional-subband mixing, and electron-hole asymmetry are disentangled and their respective physical consequences elucidated.

Topological interface states in the natural heterostructure (PbSe)5(Bi2Se3 )6 with BiPb defects

NASA Astrophysics Data System (ADS)

Momida, Hiroyoshi; Bihlmayer, Gustav; Blügel, Stefan; Segawa, Kouji; Ando, Yoichi; Oguchi, Tamio

2018-01-01

We study theoretically the electronic band structure of (PbSe) 5(Bi2Se3 )6, which consists of an ordinary insulator PbSe and a topological insulator Bi2Se3 . The first-principles calculations show that this material has a gapped Dirac-cone energy dispersion inside the bulk, which originates from the topological states of Bi2Se3 layers encapsulated by PbSe layers. Furthermore, we calculate the band structures of (BixPb1 -xSe )5(Bi2Se3 )6 with BiPb antisite defects included in the PbSe layers. The result shows that a high density of BiPb defects can exist in real materials, consistent with the experimentally estimated x of more than 30%. The BiPb defects strongly modify the band alignment between Bi2Se3 and PbSe layers, while the topological interface states of Bi2Se3 are kept as a gapped Dirac-cone-like dispersion.

Symmetry-protected topological insulator and its symmetry-enriched topologically ordered boundary

NASA Astrophysics Data System (ADS)

Wang, Juven; Wen, Xiao-Gang; Witten, Edward

We propose a mechanism for achieving symmetry-enriched topologically ordered boundaries for symmetry-protected topological states, including those of topological insulators. Several different boundary phases and their phase transitions are considered, including confined phases, deconfined phases, symmetry-breaking, gapped and gapless phases. National Science Foundation PHY-1606531, Corning Glass Works Foundation Fellowship, NSF Grant DMR- 1506475 and NSFC 11274192, the BMO Financial Group and the John Templeton Foundation No. 39901.

Spin-dependent Peltier effect in 3D topological insulators

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard

2013-03-01

The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.

Observation of fractional Chern insulators in a van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Spanton, Eric M.; Zibrov, Alexander A.; Zhou, Haoxin; Taniguchi, Takashi; Watanabe, Kenji; Zaletel, Michael P.; Young, Andrea F.

2018-04-01

Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional fillings of topologically nontrivial Chern bands. Here we report the observation of gapped states at fractional fillings of Harper-Hofstadter bands arising from the interplay of a magnetic field and a superlattice potential in a bilayer graphene–hexagonal boron nitride heterostructure. We observed phases at fractional filling of bands with Chern indices C=‑1, ±2, and ±3. Some of these phases, in C=‑1 and C=2 bands, are characterized by fractional Hall conductance—that is, they are known as fractional Chern insulators and constitute an example of topological order beyond Landau levels.

Pressure-induced topological insulator-to-metal transition and superconductivity in Sn-doped B i1.1S b0.9T e2S

NASA Astrophysics Data System (ADS)

An, Chao; Chen, Xuliang; Wu, Bin; Zhou, Yonghui; Zhou, Ying; Zhang, Ranran; Park, Changyong; Song, Fengqi; Yang, Zhaorong

2018-05-01

Tetradymite-type topological insulator Sn-doped B i1.1S b0.9T e2S (Sn-BSTS), with a surface state Dirac point energy well isolated from the bulk valence and conduction bands, is an ideal platform for studying the topological transport phenomena. Here, we present high-pressure transport studies on single-crystal Sn-BSTS, combined with Raman scattering and synchrotron x-ray diffraction measurements. Over the studied pressure range of 0.7-37.2 GPa, three critical pressure points can be observed: (i) At ˜9 GPa, a pressure-induced topological insulator-to-metal transition is revealed due to closure of the bulk band gap, which is accompanied by changes in slope of the Raman frequencies and a minimum in c /a within the pristine rhombohedral structure (R -3 m ); (ii) at ˜13 GPa, superconductivity is observed to emerge, along with the R -3 m to a C 2 /c (monoclinic) structural transition; (iii) at ˜24 GPa, the superconducting transition onset temperature TC reaches a maximum of ˜12 K , accompanied by a second structural transition from the C 2 /c to a body-centered cubic I m -3 m phase.

Andreev Reflection Spectroscopy of Nb-doped Bi2Se3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kurter, C.; Finck, A. D. K.; Qiu, Y.; Huemiller, E.; Weis, A.; Atkinson, J.; Medvedeva, J.; Hor, Y. S.; van Harlingen, D. J.

2015-03-01

Doped topological insulators are speculated to realize p-wave superconductivity with unusual low energy quasiparticles, such as surface Andreev bound states. We present point contact spectroscopy of thin exfoliated flakes of Nb-doped Bi2Se3 where superconductivity persists up to ~ 1 K, compared to 3.2 K in bulk crystals. The critical magnetic field is strongly anisotropic, consistent with quasi-2D behavior. Andreev reflection measurements of devices with low resistance contacts result in prominent BTK-like behavior with an enhanced conductance plateau at low bias. For high resistance contacts, we observe a split zero bias conductance anomaly and additional features at the superconducting gap. Our results suggest that this material is a promising platform for studying topological superconductivity. We acknowledge support from Microsoft Project Q.

Tunneling topological vacua via extended operators: (Spin-)TQFT spectra and boundary deconfinement in various dimensions

NASA Astrophysics Data System (ADS)

Wang, Juven; Ohmori, Kantaro; Putrov, Pavel; Zheng, Yunqin; Wan, Zheyan; Guo, Meng; Lin, Hai; Gao, Peng; Yau, Shing-Tung

2018-05-01

Distinct quantum vacua of topologically ordered states can be tunneled into each other via extended operators. The possible applications include condensed matter and quantum cosmology. We present a straightforward approach to calculate the partition function on various manifolds and ground state degeneracy (GSD), mainly based on continuum/cochain topological quantum field theories (TQFTs), in any dimension. This information can be related to the counting of extended operators of bosonic/fermionic TQFTs. On the lattice scale, anyonic particles/strings live at the ends of line/surface operators. Certain systems in different dimensions are related to each other through dimensional reduction schemes, analogous to (de)categorification. Examples include spin TQFTs derived from gauging the interacting fermionic symmetry-protected topological states (with fermion parity {Z}_2^f) of symmetry groups {Z}_4× {Z}_2 and ({Z}_4)^2 in 3+1D, also {Z}_2 and ({Z}_2)^2 in 2+1D. Gauging the last three cases begets non-Abelian spin TQFTs (fermionic topological order). We consider situations where a TQFT lives on (1) a closed spacetime or (2) a spacetime with a boundary, such that the bulk and boundary are fully gapped and short- or long-range entangled (SRE/LRE). Anyonic excitations can be deconfined on the boundary. We introduce new exotic topological interfaces on which neither particle nor string excitations alone condense, but only fuzzy-composite objects of extended operators can end (e.g., a string-like composite object formed by a set of particles can end on a special 2+1D boundary of 3+1D bulk). We explore the relations between group extension constructions and partially breaking constructions (e.g., 0-form/higher-form/"composite" breaking) of topological boundaries, after gauging. We comment on the implications of entanglement entropy for some such LRE systems.

Evidence for a positron bound state on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Shastry, K.; Weiss, A. H.; Barbiellini, B.; Assaf, B. A.; Lim, Z. H.; Joglekar, P. V.; Heiman, D.

2015-06-01

We describe experiments aimed at probing the sticking of positrons to the surfaces of topological insulators using the Positron Annihilation induced Auger Electron Spectrometer (PAES). A magnetically guided beam was used to deposit positrons at the surface of Bi2Te2Se sample at energy of ∼2eV. Peaks observed in the energy spectra and intensities of electrons emitted as a result of positron annihilation showed peaks at energies corresponding to Auger peaks in Bi, Teand Se providing clear evidence of Auger emission associated with the annihilation of positrons in a surface bound state. Theoretical estimates of the binding energy of this state are compared with estimates obtained by measuring the incident beam energy threshold for secondary electron emission and the temperature dependence positronium(Ps) emission. The experiments provide strong evidence for the existence of a positron bound state at the surface of Bi2Te2Se and indicate the practicality of using positron annihilation to selectively probe the critically important top most layer of topological insulator system.

Cherenkov sound on a surface of a topological insulator

NASA Astrophysics Data System (ADS)

Smirnov, Sergey

2013-11-01

Topological insulators are currently of considerable interest due to peculiar electronic properties originating from helical states on their surfaces. Here we demonstrate that the sound excited by helical particles on surfaces of topological insulators has several exotic properties fundamentally different from sound propagating in nonhelical or even isotropic helical systems. Specifically, the sound may have strictly forward propagation absent for isotropic helical states. Its dependence on the anisotropy of the realistic surface states is of distinguished behavior which may be used as an alternative experimental tool to measure the anisotropy strength. Fascinating from the fundamental point of view backward, or anomalous, Cherenkov sound is excited above the critical angle π/2 when the anisotropy exceeds a critical value. Strikingly, at strong anisotropy the sound localizes into a few forward and backward beams propagating along specific directions.

Shubnikov-de Haas oscillations in bulk ZrT e5 single crystals: Evidence for a weak topological insulator

NASA Astrophysics Data System (ADS)

Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Zhang, Kai-Wen; Li, Xiang-Bing; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Zhang, Shan-Tao; Lu, Ming-Hui; Li, Shao-Chun; Chen, Yan-Feng

2018-03-01

The study of ZrT e5 crystals is revived because of the recent theoretical prediction of topological phase in bulk ZrT e5 . However, the current conclusions for the topological character of bulk ZrT e5 are quite contradictory. To resolve this puzzle, we here identify the Berry phase on both b - and c planes of high-quality ZrT e5 crystals by the Shubnikov-de-Hass (SdH) oscillation under tilted magnetic field at 2 K. The angle-dependent SdH oscillation frequency, both on b - and c planes of ZrT e5 , demonstrates the two-dimensional feature. However, phase analysis of SdH verifies that a nontrivial π-Berry phase is observed in the c -plane SdH oscillation, but not in the b -plane one. Compared to bulk Fermi surface predicted by the first-principle calculation, the two-dimensional-like behavior of SdH oscillation measured at b plane comes from the bulk electron. Based on these analyses, it is suggested that bulk ZrT e5 at low temperature (˜2 K) belongs to a weak topological insulator, rather than Dirac semimetal or strong topological insulator as reported previously.

Optical Lattice Gases of Interacting Fermions

DTIC Science & Technology

2015-12-02

artificial gauge fields or spin-orbit coupling. This topological insulator phase turns into a topological superconductor featuring Majorana zero modes at... superconductors , are a prototypical topological superfluid. Despite its conceptually different origin, the state found by the research team for s-wave...release 2 external field [7]. A Weyl superconductor or superfluid is a gapless topological state of matter that features nontrivial (hedgehog

Majorana spin liquids, topology, and superconductivity in ladders

NASA Astrophysics Data System (ADS)

Le Hur, Karyn; Soret, Ariane; Yang, Fan

2017-11-01

We theoretically address spin chain analogs of the Kitaev quantum spin model on the honeycomb lattice. The emergent quantum spin-liquid phases or Anderson resonating valence-bond (RVB) states can be understood, as an effective model, in terms of p -wave superconductivity and Majorana fermions. We derive a generalized phase diagram for the two-leg ladder system with tunable interaction strengths between chains allowing us to vary the shape of the lattice (from square to honeycomb ribbon or brickwall ladder). We evaluate the winding number associated with possible emergent (topological) gapless modes at the edges. In the Az phase, as a result of the emergent Z2 gauge fields and π -flux ground state, one may build spin-1/2 (loop) qubit operators by analogy to the toric code. In addition, we show how the intermediate gapless B phase evolves in the generalized ladder model. For the brick-wall ladder, the B phase is reduced to one line, which is analyzed through perturbation theory in a rung tensor product states representation and bosonization. Finally, we show that doping with a few holes can result in the formation of hole pairs and leads to a mapping with the Su-Schrieffer-Heeger model in polyacetylene; a superconducting-insulating quantum phase transition for these hole pairs is accessible, as well as related topological properties.

Interband absorption edge in the topological insulators Bi2(Te1-xSex) 3

NASA Astrophysics Data System (ADS)

Dubroka, A.; Caha, O.; Hronček, M.; Friš, P.; Orlita, M.; Holý, V.; Steiner, H.; Bauer, G.; Springholz, G.; Humlíček, J.

2017-12-01

We have investigated the optical properties of thin films of topological insulators Bi2Te3 , Bi2Se3 , and their alloys Bi2(Te1-xSex) 3 on BaF2 substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi2Se3 , after the correction for the Burstein-Moss effect, we find the value of the direct band gap of 215 ±10 meV at 10 K. Our data support the picture that Bi2Se3 has a direct band gap located at the Γ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward-oriented paraboloid, i.e., without a camel-back structure. In Bi2Te3 , the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent G W band-structure calculations suggesting that the direct interband transition does not occur at the Γ point but near the Z -F line of the Brillouin zone. In the Bi2(Te1-xSex) 3 alloy, the energy of the onset of direct interband transitions exhibits a maximum near x =0.3 (i.e., the composition of Bi2Te2Se ), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

PubMed

Xiao, Di; Zhu, Wenguang; Ran, Ying; Nagaosa, Naoto; Okamoto, Satoshi

2011-12-20

Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO(3) bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in e(g) systems are also discussed.

Spin-polarized surface resonances accompanying topological surface state formation

DOE PAGES

Jozwiak, Chris; Sobota, Jonathan A.; Gotlieb, Kenneth; ...

2016-10-14

Topological insulators host spin-polarized surface states born out of the energetic inversion of bulk bands driven by the spin-orbit interaction. Here we discover previously unidentified consequences of band-inversion on the surface electronic structure of the topological insulator Bi 2Se 3. By performing simultaneous spin, time, and angle-resolved photoemission spectroscopy, we map the spin-polarized unoccupied electronic structure and identify a surface resonance which is distinct from the topological surface state, yet shares a similar spin-orbital texture with opposite orientation. Its momentum dependence and spin texture imply an intimate connection with the topological surface state. Calculations show these two distinct states canmore » emerge from trivial Rashba-like states that change topology through the spin-orbit-induced band inversion. As a result, this work thus provides a compelling view of the coevolution of surface states through a topological phase transition, enabled by the unique capability of directly measuring the spin-polarized unoccupied band structure.« less

Topological Crystalline Insulator SnTe/Si Vertical Heterostructure Photodetectors for High-Performance Near-Infrared Detection.

PubMed

Zhang, Hongbin; Man, Baoyuan; Zhang, Qi

2017-04-26

Due to the gapless surface state and narrow bulk band gap, the light absorption of topological crystalline insulators covers a broad spectrum ranging from terahertz to infrared, revealing promising applications in new generation optoelectronic devices. To date, the photodetectors based on topological insulators generally suffer from a large dark current and a weaker photocurrent especially under the near-infrared lights, which severely limits the practical application of devices. Owing to the lower excitation energy of infrared lights, the photodetection application of topological crystalline insulators in the near-infrared region relies critically on understanding the preparation and properties of their heterostructures. Herein, we fabricate the high-quality topological crystalline insulator SnTe film/Si vertical heterostructure by a simple physical vapor deposition process. The resultant heterostructure exhibits an excellent diode characteristic, enabling the construction of high-performance near-infrared photodetectors. The built-in electric field at SnTe/Si interface enhances the absorption efficiency of near-infrared lights and greatly facilitates the separation of photogenerated carriers, making the device capable of operating as a self-driven photodetector. The as-grown SnTe film acts as the hole transport layer in heterostructure photodetectors, promoting the transport of holes to electrode and reducing electron-hole recombination effectively. These merits enable the SnTe/Si heterostructure photodetector to have a high responsivity of 2.36 AW -1 , a high detectivity of 1.54 × 10 14 Jones, and a large bandwidth of 10 4 Hz in the near-infrared wavelength, which makes the detector have a promising market in novel device applications.

Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19

PubMed Central

Zheng, Guolin; Wang, Ning; Yang, Jiyong; Wang, Weike; Du, Haifeng; Ning, Wei; Yang, Zhaorong; Lu, Hai-Zhou; Zhang, Yuheng; Tian, Mingliang

2016-01-01

Many exotic physics anticipated in topological insulators require a gap to be opened for their topological surface states by breaking time reversal symmetry. The gap opening has been achieved by doping magnetic impurities, which however inevitably create extra carriers and disorder that undermine the electronic transport. In contrast, the proximity to a ferromagnetic/ferrimagnetic insulator may improve the device quality, thus promises a better way to open the gap while minimizing the side-effects. Here, we grow thin single-crystal Sb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the van der Waals epitaxy technique. The micro flakes show a negative magnetoresistance in weak perpendicular fields below 50 K, which can be quenched by increasing temperature. The signature implies the weak localization effect as its origin, which is absent in intrinsic topological insulators, unless a surface state gap is opened. The surface state gap is estimated to be 10 meV by using the theory of the gap-induced weak localization effect. These results indicate that the magnetic proximity effect may open the gap for the topological surface attached to BaM insulating ferrimagnet. This heterostructure may pave the way for the realization of new physical effects as well as the potential applications of spintronics devices. PMID:26891682

Workshop on New Trends in Topological Insulators Held in Barcelona, Spain on 3-6 June 2013. Abstracts Book

DTIC Science & Technology

2013-06-01

Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain b Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, Apdo...a,*, Pablo San José a , Elsa Prada b Jorge Cayao a a Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones...Topological Insulator. Luis Brey Instituto de Ciencia de Materiales de Madrid. CSIC brey@icmm.csic.es Abstract A topological insulator

Edge states at the interface of non-Hermitian systems

NASA Astrophysics Data System (ADS)

Yuce, C.

2018-04-01

Topological edge states appear at the interface of two topologically distinct Hermitian insulators. We study the extension of this idea to non-Hermitian systems. We consider P T -symmetric and topologically distinct non-Hermitian insulators with real spectra and study topological edge states at the interface of them. We show that P T symmetry is spontaneously broken at the interface during the topological phase transition. Therefore, topological edge states with complex energy eigenvalues appear at the interface. We apply our idea to a complex extension of the Su-Schrieffer-Heeger model.

Proximity-driven enhanced magnetic order at ferromagnetic-insulator-magnetic-topological-insulator interface

DOE PAGES

Li, Mingda; Zhu, Yimei; Chang, Cui -Zu; ...

2015-08-17

Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. In this study, we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb 2–xV xTe 3 hybrid heterostructure, where V doping is used to drive the TI (Sb 2Te 3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magneticmore » ordering.« less

Probing Dirac fermion dynamics in topological insulator Bi2Se3 films with a scanning tunneling microscope.

PubMed

Song, Can-Li; Wang, Lili; He, Ke; Ji, Shuai-Hua; Chen, Xi; Ma, Xu-Cun; Xue, Qi-Kun

2015-05-01

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi2Se3 ultrathin films. At the two-dimensional limit, bulk electrons become quantized and the quantization can be controlled by the film thickness at a single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of the phase relaxation length lϕ and inelastic scattering lifetime τ of topological surface-state electrons. We find that τ exhibits a remarkable (E - EF)(-2) energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device

NASA Astrophysics Data System (ADS)

Jauregui, Luis A.; Kayyalha, Morteza; Kazakov, Aleksandr; Miotkowski, Ireneusz; Rokhinson, Leonid P.; Chen, Yong P.

2018-02-01

We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MARs) in a bulk-insulating BiSbTeSe2 topological insulator nanoribbon (TINR) Josephson junction with superconducting Nb contacts. We observe a gate-tunable critical current (IC) for gate voltages (Vg) above the charge neutrality point (VCNP), with IC as large as 430 nA. We also observe MAR peaks in the differential conductance (dI/dV) versus DC voltage (Vdc) across the junction corresponding to sub-harmonic peaks (at Vdc = Vn = 2ΔNb/en, where ΔNb is the superconducting gap of the Nb contacts and n is the sub-harmonic order). The sub-harmonic order, n, exhibits a Vg-dependence and reaches n = 13 for Vg = 40 V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions.

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

NASA Astrophysics Data System (ADS)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics of relativistic Dirac fermions becomes relevant. This results in peculiar quantum oscillations in transport measurements which make it possible to unambiguously identify surface Dirac fermions. In order to lead us towards a better understanding of topological insulators and their applications, it is, however, necessary to develop techniques that will enable high quality materials to be obtained in a routine and reliable way. However, this has been an enormous challenge so far. Since highly volatile components are involved in most topological insulators, whether in bulk single crystal or epitaxial thin films or chemical vapor deposition grown nanoribbons, maintaining near stoichiometry has proven to be very difficult. Observing the predicted transport properties of these systems, particularly surface carriers of high mobility whilst maintaining bulk insulating states, is seriously impeded by the unintentional doping of bulk carriers. Moreover, in thin films and hetrostructures, at the all-important thickness range of a few nanometers, the additional limitation of the film-substrate lattice mismatch and the resulting strain in films is a major concern. In this thesis, we have developed a synthesis technique to obtain high quality SnTe nanoribbons, which is a topological crystalline insulator and its surface states are topologically protected by mirror symmetry of the lattice. The obtained ribbons are nearly stoichiometric and show strong semiconducting behavior with a bandgap of 240 meV. This is the first time high quality SnTe nanoribbons have been synthesized. High quality SnTe nanoribbons form a potential platform to understand the magnetic topological insulating behavior. In this thesis, it is also shown that magnetic behavior can be introduced in SnTe nanoribbons by means of chromium doping. Magnetically doped topological insulators, possessing an energy gap created at the Dirac point are predicted to exhibit exotic phenomena including the quantized anomalous Hall Effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. In addition, this thesis also discusses the growth and transport properties of another Te-based chalcogenide system, CoTe with ferrimagnetic and semiconducting behavior. We have shown that the structural, electrical and magnetic properties can be tuned by controlling the amount of cobalt in the system.

Transport properties of Dirac fermions in two dimensions

NASA Astrophysics Data System (ADS)

DaSilva, Ashley M.

The Dirac equation in particle physics is used to describe spin 1/2 fermions (such as electrons) moving at relativistic speeds. In condensed matter physics, this is usually not relevant, since particles in matter move slowly compared to the speed of light. However, recent progress has revealed two-dimensional realizations of Dirac fermions in condensed matter systems with zero mass and a redefined "speed of light." One of these systems, graphene, has been studied theoretically for decades as a building block of graphite. The other, the topological insulator, is quite new; this state of matter was predicted less than 10 years ago. Graphene was first isolated in 2004, and since then there has been an explosion of graphene research in the physics community. Much of the recent excitement has to do with the potential applications of graphene in devices. In this dissertation, I will discuss two problems related to graphene devices, and in particular how to use the strong interaction of graphene with its surroundings as an asset. I will show that a Boltzmann transport theory with all scattering mechanisms describes the current vs voltage of a graphene sheet extremely well using no adjustable parameters. One crucial element of this model is the transfer of energy from electrons directly to the substrate via scattering with optical phonons at the interface. The interaction is due to an electric field that is set up by these optical phonons, which is so strongly interacting in part due to the two dimensionality of the graphene. I will also discuss the adsorption of He atoms on a graphene sheet. This causes a change in the graphene conductivity which is large enough to be measurable. Work in this direction could provide a route to graphene sensors. The topological insulator is a recently predicted state of matter which is nominally an insulator but has metallic surface states which are topologically protected. This topological protection arises from the symmetry of the system, which requires a two-fold degeneracy at any time reversal symmetric momentum, and a band inversion, which provides a swapping of the conduction and valance band at a surface. These two conditions imply that an odd number of states will cross the gap even in the presence of disorder (as long as that disorder is time reversal symmetric). This manifests as a Dirac cone at the surface of insulators such as Bi2Se3 and Bi2Te 3. To be a true topological insulator, one must have a bulk insulator; experimentally however, most samples are bulk conductors. While rapid improvement is being made through techniques such as doping, one of the goals of the research presented in this thesis is to work towards a transport signal which is unique to the surface state even in the presence of a conducting bulk. In this direction, quantum corrections to the magnetoresistance have been shown to fail, as both bulk and surface have similar experimental signals. However work in this dissertation shows that we can still gain some insight by modeling the experimental data with the theory of quantum corrections. I will show evidence that electron-electron interactions are necessary to understand the low temperature conductivity of Bi2Se3 thin films. One unambiguous transport signal is the quantum Hall response; the energy of Dirac fermions in a strong magnetic field is quite different than their parabolic counterparts. Given this, a question that arises is the nature of the fractional quantum Hall effect in topological insulator surface states. I will predict the conditions under which the fractional quantum Hall effect is stable. Finally, one of the reasons topological insulators have gained so much enthusiasm is the potential application to topological quantum computation. This may be made possible if the theoretical predictions of particles called Majorana fermions could be realized experimentally. I discuss evidence that two necessary (although not sufficient) conditions are met: topological insulators can be made superconducting and there is evidence for the formation of vortices in such superconducting topological insulators.

Persistent Hall voltages across thin planar charged quantum rings on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Durganandini, P.

2015-03-01

We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.

Determinants of Chromosome Architecture: Insulator Pairing in cis and in trans

PubMed Central

Fujioka, Miki; Mistry, Hemlata; Schedl, Paul; Jaynes, James B.

2016-01-01

The chromosomes of multicellular animals are organized into a series of topologically independent looped domains. This domain organization is critical for the proper utilization and propagation of the genetic information encoded by the chromosome. A special set of architectural elements, called boundaries or insulators, are responsible both for subdividing the chromatin into discrete domains and for determining the topological organization of these domains. Central to the architectural functions of insulators are homologous and heterologous insulator:insulator pairing interactions. The former (pairing between copies of the same insulator) dictates the process of homolog alignment and pairing in trans, while the latter (pairing between different insulators) defines the topology of looped domains in cis. To elucidate the principles governing these architectural functions, we use two insulators, Homie and Nhomie, that flank the Drosophila even skipped locus. We show that homologous insulator interactions in trans, between Homie on one homolog and Homie on the other, or between Nhomie on one homolog and Nhomie on the other, mediate transvection. Critically, these homologous insulator:insulator interactions are orientation-dependent. Consistent with a role in the alignment and pairing of homologs, self-pairing in trans is head-to-head. Head-to-head self-interactions in cis have been reported for other fly insulators, suggesting that this is a general principle of self-pairing. Homie and Nhomie not only pair with themselves, but with each other. Heterologous Homie-Nhomie interactions occur in cis, and we show that they serve to delimit a looped chromosomal domain that contains the even skipped transcription unit and its associated enhancers. The topology of this loop is defined by the heterologous pairing properties of Homie and Nhomie. Instead of being head-to-head, which would generate a circular loop, Homie-Nhomie pairing is head-to-tail. Head-to-tail pairing in cis generates a stem-loop, a configuration much like that observed in classical lampbrush chromosomes. These pairing principles provide a mechanistic underpinning for the observed topologies within and between chromosomes. PMID:26910731

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE PAGES

Zhong, Ruidan; Schneeloch, John; Li, Qiang; ...

2017-02-16

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb 1$-$xSn x)1 $-$yInyTe: Topological and Superconducting Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Ruidan; Schneeloch, John; Li, Qiang

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1-xSn x) 1-yIn yTe. For samples with a tin concentration x ≤ 50% , the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with `6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels,more » superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.« less

An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb0.25Bi2Se3

NASA Astrophysics Data System (ADS)

Smylie, M. P.; Willa, K.; Ryan, K.; Claus, H.; Kwok, W.-K.; Qiu, Y.; Hor, Y. S.; Welp, U.

2017-12-01

We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb0.25Bi2Se3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues CuxBi2Se3 and SrxBi2Se3 where smooth suppression of Tc is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi2Se3 family are believed to be single-band.

An increase in Tc under hydrostatic pressure in the superconducting doped topological insulator Nb 0.25Bi 2Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Ryan, K.; ...

2017-10-26

Here, we report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb 0.25Bi 2Se 3 via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues Cu xBi 2Se 3 and Sr xBi 2Se 3 where smooth suppression of T c is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi 2Se 3 family are believed to be single-band.

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3.

PubMed

Walsh, Lee A; Green, Avery J; Addou, Rafik; Nolting, Westly; Cormier, Christopher R; Barton, Adam T; Mowll, Tyler R; Yue, Ruoyu; Lu, Ning; Kim, Jiyoung; Kim, Moon J; LaBella, Vincent P; Ventrice, Carl A; McDonnell, Stephen; Vandenberghe, William G; Wallace, Robert M; Diebold, Alain; Hinkle, Christopher L

2018-06-08

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in Bi 2 Se 3 and achieving Fermi levels ( E F ) that reside in between the bulk valence and conduction bands so that the topologically protected surface states dominate the transport. The overwhelming majority of the Bi 2 Se 3 studies in the literature report strongly n-type materials with E F in the bulk conduction band due to the presence of a high concentration of selenium vacancies. In contrast, here we report the growth of near-intrinsic Bi 2 Se 3 with a minimal Se vacancy concentration providing a Fermi level near midgap with no extrinsic counter-doping required. We also demonstrate the crucial ability to tune E F from below midgap into the upper half of the gap near the conduction band edge by controlling the Se vacancy concentration using post-growth anneals. Additionally, we demonstrate the ability to maintain this Fermi level control following the careful, low-temperature removal of a protective Se cap, which allows samples to be transported in air for device fabrication. Thus, we provide detailed guidance for E F control that will finally enable researchers to fabricate high-performance devices that take advantage of transport through the topologically protected surface states of Bi 2 Se 3 .

Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime

NASA Astrophysics Data System (ADS)

Liang, Jinghua; Cheng, Long; Zhang, Jie; Liu, Huijun; Zhang, Zhenyu

2016-04-01

Using first-principles calculations and the Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems.Using first-principles calculations and the Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00724d

Skyrme insulators: insulators at the brink of superconductivity

DOE PAGES

Ertem, Onur; Chang, Po -Yao; Coleman, Piers; ...

2017-08-04

Current theories of superfluidity are based on the idea of a coherent quantum state with topologically protected, quantized circulation. When this topological protection is absent, as in the case of 3He-A, the coherent quantum state no longer supports persistent superflow. In this paper, we argue that the loss of topological protection in a superconductor gives rise to an insulating ground state. Specifically, we introduce the concept of a Skyrme insulator to describe the coherent dielectric state that results from the topological failure of superflow carried by a complex vector order parameter. Here, we apply this idea to the case ofmore » SmB6, arguing that the observation of a diamagnetic Fermi surface within an insulating bulk can be understood as a realization of this state. Our theory enables us to understand the linear specific heat of SmB6 in terms of a neutral Majorana Fermi sea and leads us to predict that in low fields of order a Gauss, SmB6 will develop a Meissner effect.« less

Skyrme Insulators: Insulators at the Brink of Superconductivity

NASA Astrophysics Data System (ADS)

Erten, Onur; Chang, Po-Yao; Coleman, Piers; Tsvelik, Alexei M.

2017-08-01

Current theories of superfluidity are based on the idea of a coherent quantum state with topologically protected quantized circulation. When this topological protection is absent, as in the case of 3He -A , the coherent quantum state no longer supports persistent superflow. Here, we argue that the loss of topological protection in a superconductor gives rise to an insulating ground state. We specifically introduce the concept of a Skyrme insulator to describe the coherent dielectric state that results from the topological failure of superflow carried by a complex-vector order parameter. We apply this idea to the case of SmB6 , arguing that the observation of a diamagnetic Fermi surface within an insulating bulk can be understood as a realization of this state. Our theory enables us to understand the linear specific heat of SmB6 in terms of a neutral Majorana Fermi sea and leads us to predict that in low fields of order a Gauss, SmB6 will develop a Meissner effect.

Contact spectroscopy on S/TI/N devices: Induced pairing on the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Stehno, Martin P.; Ngabonziza, Prosper; Snelder, Marieke; Myoren, Hiroaki; Pan, Yu; de Visser, Anne; Huang, Y.; Golden, Mark S.; Brinkman, Alexander

Translating concepts of topological quantum computation into applications requires fine-tuning of parameters in the model Hamiltonians of candidate systems. Such level of control has proven difficult to achieve in devices where superconductors are used to induce pairing in topological insulator (TI) materials. While local probe experiments have indicated features of p-wave superconducting correlations in TIs (as suggested by theory), results on extended devices often remain ambiguous. We present contact spectroscopy data on superconductor/topological insulator/normal metal devices with bulk-insulating TI material and compare these with bulk conducting samples. We discuss the magnitude of the induced gap and unusual features in the conductance traces of the bulk-insulating samples that may suggest the presence of p-wave type correlations in the TI. This work is financially supported by the Dutch Foundation for Fundamental Research on Matter (FOM), the Netherlands Organization for Scientific Research (NWO), and by the European Research Council (ERC).

Investigations of surface structural, dynamical, and magnetic properties of systems exhibiting multiferroicity, and topological phases by helium scattering spectroscopies

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Batanouny, Maged

2015-08-03

We propose to investigate the surface structural, dynamics and magnetic properties of the novel class of topological insulator crystals, as well as crystals that exhibit multiferroicity, magnetoelectricity and thermoelectricity. Topological insulators (TIs) are a new class of insulators in which a bulk gap for electronic excitations is generated because of the strong spin-orbit coupling inherent to these systems. These materials are distinguished from ordinary insulators by the presence of gapless metallic surface states, resembling chiral edge modes in quantum Hall systems, but with unconventional spin textures. These exotic metallic states are formed by topological conditions that also render the electrons travelling on such surfaces insensitive to scattering by impurities. The electronic quasi-particles populating the topological surface state are Dirac fermions; they have a linear dispersion and thus are massless just like photons. We propose to investigate the interaction of these massless Dirac fermions with the massive lattice in the newly discovered crystals, Bi2Se3, Bi2Te3 and Sb2Te3. We shall use inelastic helium beam scattering from surfaces to search for related signatures in surface phonon dispersions mappings that cover the entire surface Brillouin zone of these materials. Our recent investigations of the (001) surface of the multiferroic crystals (Li/Na)Cu2O2 revealed an anomalous surface structural behavior where surface Cumore » $$^{2+}$$ row rise above the surface plane as the crystal was cooled. Subsequent worming revealed the onset of a thermally activated incommensurate surface phase, driven by the elevated rows. We are currently investigating the structure of the magnetic phases in these quasi-one-dimensional magnetic rows. Multiferroics are excellent candidates for large magnetoelectric response. We propose to extend this investigation to the class of delafossites which are also multiferroics and have been investigated as good candidates for thermoelectric power devices. They are also typical triangular lattice antiferromagnets with geometric magnetic frustration that leads to helimagnetic structures.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsvelik, A. M.; Yevtushenko, O. M.

We study the low energy physics of a Kondo chain where electrons from a one-dimensional band interact with magnetic moments via an anisotropic exchange interaction. It is demonstrated that the anisotropy gives rise to two different phases which are separated by a quantum phase transition. In the phase with easy plane anisotropy, Z2 symmetry between sectors with different helicity of the electrons is broken. As a result, localization effects are suppressed and the dc transport acquires (partial) symmetry protection. This effect is similar to the protection of the edge transport in time-reversal invariant topological insulators. The phase with easy axismore » anisotropy corresponds to the Tomonaga-Luttinger liquid with a pronounced spin-charge separation. The slow charge density wave modes have no protection against localizatioin.« less

High power passive mode-locked L-band fiber laser based on microfiber topological insulator saturable absorber

NASA Astrophysics Data System (ADS)

Semaan, Georges; Meng, Yichang; Salhi, Mohamed; Niang, Alioune; Guesmi, Khmaies; Luo, Zhi-Chao; Sanchez, Francois

2016-04-01

In this communication, we demonstrate a passive mode-locked Er:Yb co-doped double-clad fiber laser using a tapered microfiber topological insulator (Bi2Se3) saturable absorber (TISA). The topological insulator is drop-casted onto the tapered fiber and optically deposited by optical tweezer effect. We use a ring laser setup including the fabricated TISA. By carefully optimizing the cavity losses and output coupling ratio, the mode-locked laser can operate in L-band with a high average output power. At a maximum pump power of 5 W, we obtain the 91st harmonic mode-locking of soliton bunches with a 3dB spectral bandwidth of 1.06nm, a repetition rate of 640.9 MHz and an average output power of 308mW. As far as we know, this is the highest output power yet reported of a mode-locked fiber laser operating with a TISA.

Topological Z2 resonating-valence-bond spin liquid on the square lattice

NASA Astrophysics Data System (ADS)

Chen, Ji-Yao; Poilblanc, Didier

2018-04-01

A one-parameter family of long-range resonating-valence-bond (RVB) state on the square lattice was previously proposed to describe a critical spin liquid (SL) phase of the spin-1/2 frustrated Heisenberg model. We provide evidence that this RVB state in fact also realizes a topological (long-range entangled) Z2 SL, limited by two transitions to critical SL phases. The topological phase is naturally connected to the Z2 gauge symmetry of the local tensor. This Rapid Communication shows that, on one hand, spin-1/2 topological SL with C4 v point-group symmetry and S U (2 ) spin rotation symmetry exists on the square lattice and, on the other hand, criticality and nonbipartiteness are compatible. We also point out that strong similarities between our phase diagram and the ones of classical interacting dimer models suggest both can be described by similar Kosterlitz-Thouless transitions. This scenario is further supported by the analysis of the one-dimensional boundary state. Forms of parent Hamiltonians hosting the Z2 SL are suggested.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zuocheng; Wei, Wei; Yang, Fangyuan

In this paper, we report quantum oscillation studies on the Bi 2Te 3-xS x topological insulator single crystals in pulsed magnetic fields up to 91 T. For the x = 0.4 sample with the lowest bulk carrier density, the surface and bulk quantum oscillations can be disentangled by combined Shubnikov–de Haas and de Hass–van Alphen oscillations, as well as quantum oscillations in nanometer-thick peeled crystals. At high magnetic fields beyond the bulk quantum limit, our results suggest that the zeroth Landau level of topological surface states is shifted due to the Zeeman effect. The g factor of the topological surfacemore » states is estimated to be between 1.8 and 4.5. Lastly, these observations shed new light on the quantum transport phenomena of topological insulators in ultrahigh magnetic fields.« less

Zeeman effect of the topological surface states revealed by quantum oscillations up to 91 Tesla

DOE PAGES

Zhang, Zuocheng; Wei, Wei; Yang, Fangyuan; ...

2015-12-01

In this paper, we report quantum oscillation studies on the Bi 2Te 3-xS x topological insulator single crystals in pulsed magnetic fields up to 91 T. For the x = 0.4 sample with the lowest bulk carrier density, the surface and bulk quantum oscillations can be disentangled by combined Shubnikov–de Haas and de Hass–van Alphen oscillations, as well as quantum oscillations in nanometer-thick peeled crystals. At high magnetic fields beyond the bulk quantum limit, our results suggest that the zeroth Landau level of topological surface states is shifted due to the Zeeman effect. The g factor of the topological surfacemore » states is estimated to be between 1.8 and 4.5. Lastly, these observations shed new light on the quantum transport phenomena of topological insulators in ultrahigh magnetic fields.« less

Vortices and gate-tunable bound states in a topological insulator coupled to superconducting leads

NASA Astrophysics Data System (ADS)

Finck, Aaron; Kurter, C.; Hor, Y. S.; van Harlingen, D. J.

2014-03-01

It has been predicted that zero energy Majorana bound states can be found in the core of vortices within topological superconductors. Here, we report on Andreev spectroscopy measurements of the topological insulator Bi2Se3 with a normal metal lead and one or more niobium leads. The niobium induces superconductivity in the Bi2Se3 through the proximity effect, leading to both signatures of Andreev reflection and a prominent re-entrant resistance effect. When a large magnetic field is applied perpendicular to the surface of the Bi2Se3, we observe multiple abrupt changes in the subgap conductance that are accompanied by sharp peaks in the dynamical resistance. These peaks are very sensitive to changes in magnetic field and disappear at temperatures associated with the critical temperature of the induced superconductivity. The appearance of the transitions and peaks can be tuned by a top gate. At high magnetic fields, we also find evidence of gate-tunable states, which can lead to stable zero-bias conductance peaks. We interpret our results in terms of a transition occurring within the proximity effect region of the topological insulator, likely due to the formation of vortices. We acknowledge support from Microsoft Project Q.

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb x,Bi 1–x) 2Te 3

DOE PAGES

Patankar, Shreyas; Hinton, J. P.; Griesmar, Joel; ...

2015-12-31

Here, we report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr 0.12Bi 0.26Sb 0.62) 2Te 3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ℏω < 3.0eV. We observed a peak in the real part of Θ K(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of themore » temperature and magnetic field dependence of Θ K in the ultrathin film limit, d ≥ 2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.« less

Ultraviolet and visible range plasmonics in the topological insulator Bi1.5Sb0.5Te1.8Se1.2

NASA Astrophysics Data System (ADS)

Ou, Jun-Yu; So, Jin-Kyu; Adamo, Giorgio; Sulaev, Azat; Wang, Lan; Zheludev, Nikolay I.

2014-10-01

The development of metamaterials, data processing circuits and sensors for the visible and ultraviolet parts of the spectrum is hampered by the lack of low-loss media supporting plasmonic excitations. This has driven the intense search for plasmonic materials beyond noble metals. Here we show that the semiconductor Bi1.5Sb0.5Te1.8Se1.2, also known as a topological insulator, is also a good plasmonic material in the blue-ultraviolet range, in addition to the already-investigated terahertz frequency range. Metamaterials fabricated from Bi1.5Sb0.5Te1.8Se1.2 show plasmonic resonances from 350 to 550 nm, while surface gratings exhibit cathodoluminescent peaks from 230 to 1,050 nm. The observed plasmonic response is attributed to the combination of bulk charge carriers from interband transitions and surface charge carriers of the topological insulator. The importance of our result is in the identification of new mechanisms of negative permittivity in semiconductors where visible range plasmonics can be directly integrated with electronics.

Synthetic topological Kondo insulator in a pumped optical cavity

NASA Astrophysics Data System (ADS)

Zheng, Zhen; Zou, Xu-Bo; Guo, Guang-Can

2018-02-01

Motivated by experimental advances on ultracold atoms coupled to a pumped optical cavity, we propose a scheme for synthesizing and observing the Kondo insulator in Fermi gases trapped in optical lattices. The synthetic Kondo phase arises from the screening of localized atoms coupled to mobile ones, which in our proposal is generated via the pumping laser as well as the cavity. By designing the atom-cavity coupling, it can engineer a nearest-neighbor-site Kondo coupling that plays an essential role for supporting topological Kondo phase. Therefore, the cavity-induced Kondo transition is associated with a nontrivial topological features, resulting in the coexistence of the superradiant and topological Kondo state. Our proposal can be realized with current technique, and thus has potential applications in quantum simulation of the topological Kondo insulator in ultracold atoms.

Emergence, evolution, and control of multistability in a hybrid topological quantum/classical system.

PubMed

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2018-03-01

We present a novel class of nonlinear dynamical systems-a hybrid of relativistic quantum and classical systems and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and an insulating ferromagnet, where the former possesses an insulating bulk with topologically protected, dissipationless, and conducting surface electronic states governed by the relativistic quantum Dirac Hamiltonian and the latter is described by the nonlinear classical evolution of its magnetization vector. The interactions between the two are essentially the spin transfer torque from the topological insulator to the ferromagnet and the local proximity induced exchange coupling in the opposite direction. The hybrid system exhibits a rich variety of nonlinear dynamical phenomena besides multistability such as bifurcations, chaos, and phase synchronization. The degree of multistability can be controlled by an external voltage. In the case of two coexisting states, the system is effectively binary, opening a door to exploitation for developing spintronic memory devices. Because of the dissipationless and spin-momentum locking nature of the surface currents of the topological insulator, little power is needed for generating a significant current, making the system appealing for potential applications in next generation of low power memory devices.

Emergence, evolution, and control of multistability in a hybrid topological quantum/classical system

NASA Astrophysics Data System (ADS)

Wang, Guanglei; Xu, Hongya; Lai, Ying-Cheng

2018-03-01

We present a novel class of nonlinear dynamical systems—a hybrid of relativistic quantum and classical systems and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and an insulating ferromagnet, where the former possesses an insulating bulk with topologically protected, dissipationless, and conducting surface electronic states governed by the relativistic quantum Dirac Hamiltonian and the latter is described by the nonlinear classical evolution of its magnetization vector. The interactions between the two are essentially the spin transfer torque from the topological insulator to the ferromagnet and the local proximity induced exchange coupling in the opposite direction. The hybrid system exhibits a rich variety of nonlinear dynamical phenomena besides multistability such as bifurcations, chaos, and phase synchronization. The degree of multistability can be controlled by an external voltage. In the case of two coexisting states, the system is effectively binary, opening a door to exploitation for developing spintronic memory devices. Because of the dissipationless and spin-momentum locking nature of the surface currents of the topological insulator, little power is needed for generating a significant current, making the system appealing for potential applications in next generation of low power memory devices.

Odd-frequency superconducting pairing and subgap density of states at the edge of a two-dimensional topological insulator without magnetism

NASA Astrophysics Data System (ADS)

Cayao, Jorge; Black-Schaffer, Annica M.

2017-10-01

We investigate the emergence and consequences of odd-frequency spin-triplet s -wave pairing in superconducting hybrid junctions at the edge of a two-dimensional topological insulator without any magnetism. More specifically, we consider several different normal-superconductor hybrid systems at the topological insulator edge, where spin-singlet s -wave superconducting pairing is proximity induced from an external conventional superconductor. We perform fully analytical calculations and show that odd-frequency mixed spin-triplet s -wave pairing arises due to the unique spin-momentum locking in the topological insulator edge state and the naturally nonconstant pairing potential profile in hybrid systems. Importantly, we establish a one-to-one correspondence between the local density of states (LDOS) at low energies and the odd-frequency spin-triplet pairing in NS, NSN, and SNS junctions along the topological insulator edge; at interfaces the enhancement in the LDOS can directly be attributed to the contribution of odd-frequency pairing. Furthermore, in SNS junctions we show that the emergence of the zero-energy LDOS peak at the superconducting phase ϕ =π is associated purely with odd-frequency pairing in the middle of the junction.

Chemical Intercalation of Topological Insulator Grid Nanostructures for High-Performance Transparent Electrodes.

PubMed

Guo, Yunfan; Zhou, Jinyuan; Liu, Yujing; Zhou, Xu; Yao, Fengrui; Tan, Congwei; Wu, Jinxiong; Lin, Li; Liu, Kaihui; Liu, Zhongfan; Peng, Hailin

2017-11-01

2D layered nanomaterials with strong covalent bonding within layers and weak van der Waals' interactions between layers have attracted tremendous interest in recent years. Layered Bi 2 Se 3 is a representative topological insulator material in this family, which holds promise for exploration of the fundamental physics and practical applications such as transparent electrode. Here, a simultaneous enhancement of optical transmittancy and electrical conductivity in Bi 2 Se 3 grid electrodes by copper-atom intercalation is presented. These Cu-intercalated 2D Bi 2 Se 3 electrodes exhibit high uniformity over large area and excellent stabilities to environmental perturbations, such as UV light, thermal fluctuation, and mechanical distortion. Remarkably, by intercalating a high density of copper atoms, the electrical and optical performance of Bi 2 Se 3 grid electrodes is greatly improved from 900 Ω sq -1 , 68% to 300 Ω sq -1 , 82% in the visible range; with better performance of 300 Ω sq -1 , 91% achieved in the near-infrared region. These unique properties of Cu-intercalated topological insulator grid nanostructures may boost their potential applications in high-performance optoelectronics, especially for infrared optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Topological Oxide Insulator in Cubic Perovskite Structure

PubMed Central

Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

2013-01-01

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

Effects of Structural and Electronic Disorder in Topological Insulator Sb2Te3 Thin Films

NASA Astrophysics Data System (ADS)

Korzhovska, Inna

Topological quantum matter is a unique and potentially transformative protectorate against disorder-induced backscattering. The ultimate disorder limits to the topological state, however, are still not known - understanding these limits is critical to potential applications in the fields of spintronics and information processing. In topological insulators spin-orbit interaction and time-reversal-symmetry invariance guarantees - at least up to a certain disorder strength - that charge transport through 2D gapless Dirac surface states is robust against backscattering by non-magnetic disorder. Strong disorder may destroy topological protection and gap out Dirac surface states, although recent theories predict that under severe electronic disorder a quantized topological conductance might yet reemerge. Very strong electronic disorder, however, is not trivial to install and quantify, and topological matter under such conditions thus far has not been experimentally tested. This thesis addresses the behavior of three-dimensional (3D) topological insulator (TI) films in a wide range of structural and electronic disorder. We establish strong positional disorder in thin (20-50 nm) Sb2Te 3 films, free of extrinsic magnetic dopants. Sb 2Te3 is a known 2nd generation topological insulator in the low-disorder crystalline state. It is also a known phase-change material that undergoes insulator-to-metal transition with the concurrent orders of magnitude resistive drop, where a huge range of disorder could be controllably explored. In this work we show that even in the absence of magnetic dopants, disorder may induce spin correlations detrimental to the topological state. Chapter 1 contains a brief introduction to the topological matter and describes the role played by disorder. This is followed by theory considerations and a survey of prior experimental work. Next we describe the motivation for our experiments and explain the choice of the material. Chapter 2 describes deposition techniques used for material growth, including the parameters significance and effects on the material properties. Chapter 3 describes structural and electrical characterization techniques employed in the work. In Chapter 4-5 we discuss the experimental results. Sb2Te 3 films at extreme disorder, where spin correlations dominate the transport of charge, are discussed in Chapter 4. We employ transport measurements as our main tool to explore disorder-induced changes in the Sb2Te 3. In addition we directly detect disorder-induced spin response in thin Sb2Te3 films free of extrinsic magnetic dopants; it onsets at a surprisingly high temperature ( 200 K) and vanishes when disorder is reduced. Localized spins control the hopping (tunneling) transport through spin memory induced by the non-equilibrium charge currents. The observed spin-memory phenomenon emerges as negative magnetoresistance distinct from orbital quantum interference effects. The hopping mechanism and spin correlations dominate transport over an extensive disorder range. Spin correlations are eventually suppressed by the restoration of positional order in the (bulk) crystalline state, implying a disorder threshold to the topological state. As disorder is reduced the material undergoes structural and electronic transitions, which are discussed in Chapter 5. We obtain a number of characteristic attributes that change sharply at the structural and electronic transitions: localization length, dimensionality, and the nature of conductance. Structural transition is clearly seen in the changes in lattice vibrations tracked by Raman spectroscopy, which we use here as a metric of disorder. The significance of the disorder-induced localization transition is discussed. Next we investigate the effects of structural and electronic disorder on the bulk and surfaces in the crystalline state of Sb2Te3. The nontrivial topology of this strongly spin-orbit coupled material comes from the band inversion in the bulk. One of the key transport signatures of topological surfaces is weak antilocalization (WAL) correction to conductivity; it is associated with the topological pi Berry phase and should display a two-dimensional (2D) character. In our work, we establish the disorder level at which 2D WAL appears. The conduction at this threshold is one conduction quantum G0; it corresponds to the topological quantum channel. Finally, we summarize our key findings and discuss open questions and next steps toward the understanding of disorder-induced correlations in the spin and charge channels that can alter the emergent behaviors of the topological states.

Nobel Lecture: Topological quantum matter*

NASA Astrophysics Data System (ADS)

Haldane, F. Duncan M.

2017-10-01

Nobel Lecture, presented December 8, 2016, Aula Magna, Stockholm University. I will describe the history and background of three discoveries cited in this Nobel Prize: The "TKNN" topological formula for the integer quantum Hall effect found by David Thouless and collaborators, the Chern insulator or quantum anomalous Hall effect, and its role in the later discovery of time-reversal-invariant topological insulators, and the unexpected topological spin-liquid state of the spin-1 quantum antiferromagnetic chain, which provided an initial example of topological quantum matter. I will summarize how these early beginnings have led to the exciting, and currently extremely active, field of "topological matter."

Topological quantization in units of the fine structure constant.

PubMed

Maciejko, Joseph; Qi, Xiao-Liang; Drew, H Dennis; Zhang, Shou-Cheng

2010-10-15

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant topological insulator in three dimensions exhibits a topological magnetoelectric effect quantized in units of the fine structure constant α=e²/ℏc. In this Letter, we propose an optical experiment to directly measure this topological quantization phenomenon, independent of material details. Our proposal also provides a way to measure the half-quantized Hall conductances on the two surfaces of the topological insulator independently of each other.

Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takane, Daichi; Souma, Seigo; Center for Spintronics Research Network, Tohoku University, Sendai 980-8577

Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as amore » useful guide for developing TI-based electronic devices.« less

Topological insulator infrared pseudo-bolometer with polarization sensitivity

DOEpatents

Sharma, Peter Anand

2017-10-25

Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

Second-order topological insulators and superconductors with an order-two crystalline symmetry

NASA Astrophysics Data System (ADS)

Geier, Max; Trifunovic, Luka; Hoskam, Max; Brouwer, Piet W.

2018-05-01

Second-order topological insulators and superconductors have a gapped excitation spectrum in bulk and along boundaries, but protected zero modes at corners of a two-dimensional crystal or protected gapless modes at hinges of a three-dimensional crystal. A second-order topological phase can be induced by the presence of a bulk crystalline symmetry. Building on Shiozaki and Sato's complete classification of bulk crystalline phases with an order-two crystalline symmetry [Phys. Rev. B 90, 165114 (2014), 10.1103/PhysRevB.90.165114], such as mirror reflection, twofold rotation, or inversion symmetry, we classify all corresponding second-order topological insulators and superconductors. The classification also includes antiunitary symmetries and antisymmetries.

Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator.

PubMed

Charpentier, Sophie; Galletti, Luca; Kunakova, Gunta; Arpaia, Riccardo; Song, Yuxin; Baghdadi, Reza; Wang, Shu Min; Kalaboukhov, Alexei; Olsson, Eva; Tafuri, Francesco; Golubev, Dmitry; Linder, Jacob; Bauch, Thilo; Lombardi, Floriana

2017-12-08

Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p x  + ip y wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi 2 Te 3 topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral p x  + ip y component. The magnetic field pattern of the junctions shows a dip at zero externally applied magnetic field, which is an incontrovertible signature of the simultaneous existence of 0 and π coupling within the junction, inherent to a non trivial order parameter phase. The nano-textured morphology of the Bi 2 Te 3 flakes, and the dramatic role played by thermal strain are the surprising key factors for the display of an unconventional induced order parameter.

Stable topological insulators achieved using high energy electron beams

PubMed Central

Zhao, Lukas; Konczykowski, Marcin; Deng, Haiming; Korzhovska, Inna; Begliarbekov, Milan; Chen, Zhiyi; Papalazarou, Evangelos; Marsi, Marino; Perfetti, Luca; Hruban, Andrzej; Wołoś, Agnieszka; Krusin-Elbaum, Lia

2016-01-01

Topological insulators are potentially transformative quantum solids with metallic surface states which have Dirac band structure and are immune to disorder. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift (∼2.5 MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap and reach the charge neutrality point (CNP). Controlling the beam fluence, we tune bulk conductivity from p- (hole-like) to n-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional character on the order of ten conductance quanta and reveals, both in Bi2Te3 and Bi2Se3, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size. PMID:26961901

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE PAGES

Wang, Jing; Zhou, Quan; Lian, Biao; ...

2015-08-31

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jing; Zhou, Quan; Lian, Biao

Here, we propose to realize a two-dimensional chiral topological superconducting (TSC) state from the quantum anomalous Hall plateau transition in a magnetic topological insulator thin film through the proximity effect to a conventional s -wave superconductor. This state has a full pairing gap in the bulk and a single chiral Majorana mode at the edge. The optimal condition for realizing such chiral TSC is to have inequivalent superconducting pairing amplitudes on top and bottom surfaces of the doped magnetic topological insulator. We further propose several transport experiments to detect the chiral TSC. One unique signature is that the conductance willmore » be quantized into a half-integer plateau at the coercive field in this hybrid system. In particular, with the point contact formed by a superconducting junction, the conductance oscillates between e 2 /2h and e2 /h with the frequency determined by the voltage across the junction. We close by discussing the feasibility of these experimental proposals.« less

Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S

NASA Astrophysics Data System (ADS)

Annese, E.; Okuda, T.; Schwier, E. F.; Iwasawa, H.; Shimada, K.; Natamane, M.; Taniguchi, M.; Rusinov, I. P.; Eremeev, S. V.; Kokh, K. A.; Golyashov, V. A.; Tereshchenko, O. E.; Chulkov, E. V.; Kimura, A.

2018-05-01

We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S . The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and G W calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ ¯-K ¯ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.

Kibble-Zurek scaling and string-net coarsening in topologically ordered systems.

PubMed

Chandran, Anushya; Burnell, F J; Khemani, Vedika; Sondhi, S L

2013-10-09

We consider the non-equilibrium dynamics of topologically ordered systems driven across a continuous phase transition into proximate phases with no, or reduced, topological order. This dynamics exhibits scaling in the spirit of Kibble and Zurek but now without the presence of symmetry breaking and a local order parameter. The late stages of the process are seen to exhibit a slow, coarsening dynamics for the string-net that underlies the physics of the topological phase, a potentially interesting signature of topological order. We illustrate these phenomena in the context of particular phase transitions out of the Abelian Z2 topologically ordered phase of the toric code/Z2 gauge theory, and the non-Abelian SU(2)k ordered phases of the relevant Levin-Wen models.

Identifying topological-band insulator transitions in silicene and other 2D gapped Dirac materials by means of Rényi-Wehrl entropy

NASA Astrophysics Data System (ADS)

Calixto, M.; Romera, E.

2015-02-01

We propose a new method to identify transitions from a topological insulator to a band insulator in silicene (the silicon equivalent of graphene) in the presence of perpendicular magnetic and electric fields, by using the Rényi-Wehrl entropy of the quantum state in phase space. Electron-hole entropies display an inversion/crossing behavior at the charge neutrality point for any Landau level, and the combined entropy of particles plus holes turns out to be maximum at this critical point. The result is interpreted in terms of delocalization of the quantum state in phase space. The entropic description presented in this work will be valid in general 2D gapped Dirac materials, with a strong intrinsic spin-orbit interaction, isostructural with silicene.

Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2016-07-01

Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor.more » The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

Emergent Topological order from Spin-Orbit Density wave

NASA Astrophysics Data System (ADS)

Gupta, Gaurav; Das, Tanmoy

We study the emergence of a Z2 -type topological order because of Landau type symmetry breaking order parameter. When two Rashba type SOC bands of different chirality become nested by a magic wavevector [(0, ∖pi) or (∖pi,0)], it introduces the inversion of chirality between different lattice sites. Such a density wave state is known as spin-orbit density wave. The resulting quantum order is associated with the topological order which is classified by a Z2 invariant. So, this system can simultaneously be classified by both a symmetry breaking order parameter and the associated Z2 topological invariant. This order parameter can be realized or engineered in two- or quasi-two-dimensional fermionic lattices, quantum wires, with tunable RSOC and correlation strength. The work is facilitated by the computer cluster facility at Department of Physics, Indian Institute of Science.

Thermoelectric properties of an ultra-thin topological insulator.

PubMed

Islam, S K Firoz; Ghosh, T K

2014-04-23

Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor.

Plateau-Plateau Transitions in Disordered Topological Chern Insulators

NASA Astrophysics Data System (ADS)

Su, Ying; Avishai, Yshai; Wang, Xiangrong

Occurrence of the topological Anderson insulator (TAI) in the HgTe quantum well demonstrates that topological phase transition can be driven by disorder, where re-entrant 2e2 / h quantized conductance is contributed by helical edge states. Within a certain extension of the disordered Kane-Mele model for magnetic materials that violate time-reversal symmetry and inversion symmetry, it is shown that the physics of TAI becomes even richer due to lifted spin and valley degeneracies. Tuning either disorder or Fermi energy (in both topologically trivial and nontrivial phases) makes it possible to drive plateau-plateau transitions between distinct TAI phases characterized by different Chern numbers, marked by jumps of the quantized conductance from 0 to e2 / h and from e2 / h to 2e2 / h . An effective medium theory based on the Born approximation yields an accurate description of different TAI phases in parameter space. This work is supported by NSF of China Grant (No. 11374249) and Hong Kong RGC Grants (No. 163011151 and No. 605413). The research of Y.A. is partially supported by Israel Science Foundation Grant No. 400/2012.

Evidence of charged puddles and induced dephasing in topological insulator thin films

NASA Astrophysics Data System (ADS)

Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Roy, Subhadip; Mitra, Chiranjib

2018-05-01

We investigate the dephasing mechanism in bulk insulating topological insulator thin films. The phase coherence length is extracted from magnetoresistance measurements at different temperatures. There is a crossover of the phase coherence length as a function of temperature signifying the role of more than one dephasing mechanism in the system. The dephasing rates have been studied systematically and explained.

Topological phononic insulator with robust pseudospin-dependent transport

NASA Astrophysics Data System (ADS)

Xia, Bai-Zhan; Liu, Ting-Ting; Huang, Guo-Liang; Dai, Hong-Qing; Jiao, Jun-Rui; Zang, Xian-Guo; Yu, De-Jie; Zheng, Sheng-Jie; Liu, Jian

2017-09-01

Topological phononic states, which facilitate unique acoustic transport around defects and disorders, have significantly revolutionized our scientific cognition of acoustic systems. Here, by introducing a zone folding mechanism, we realize the topological phase transition in a double Dirac cone of the rotatable triangular phononic crystal with C3 v symmetry. We then investigate the distinct topological edge states on two types of interfaces of our phononic insulators. The first one is a zigzag interface which simultaneously possesses a symmetric mode and an antisymmetric mode. Hybridization of the two modes leads to a robust pseudospin-dependent one-way propagation. The second one is a linear interface with a symmetric mode or an antisymmetric mode. The type of mode is dependent on the topological phase transition of the phononic insulators. Based on the rotatability of triangular phononic crystals, we consider several complicated contours defined by the topological zigzag interfaces. Along these contours, the acoustic waves can unimpededly transmit without backscattering. Our research develops a route for the exploration of the topological phenomena in experiments and provides an excellent framework for freely steering the acoustic backscattering-immune propagation within topological phononic structures.

Strong interband Faraday rotation in 3D topological insulator Bi2Se3.

PubMed

Ohnoutek, L; Hakl, M; Veis, M; Piot, B A; Faugeras, C; Martinez, G; Yakushev, M V; Martin, R W; Drašar, Č; Materna, A; Strzelecka, G; Hruban, A; Potemski, M; Orlita, M

2016-01-11

The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in which time-reversal symmetry has been broken by an externally applied magnetic field. Here we report on the Faraday rotation induced in the prominent 3D topological insulator Bi2Se3 due to bulk interband excitations. The origin of this non-resonant effect, extraordinarily strong among other non-magnetic materials, is traced back to the specific Dirac-type Hamiltonian for Bi2Se3, which implies that electrons and holes in this material closely resemble relativistic particles with a non-zero rest mass.

Electron–hole asymmetry of the topological surface states in strained HgTe

PubMed Central

Jost, Andreas; Bendias, Michel; Böttcher, Jan; Hankiewicz, Ewelina; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.; Maan, Jan C.; Zeitler, Uli; Hussey, Nigel; Wiedmann, Steffen

2017-01-01

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron–hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected. PMID:28280101

Two-dimensional topological insulators with large bulk energy gap

NASA Astrophysics Data System (ADS)

Yang, Z. Q.; Jia, Jin-Feng; Qian, Dong

2016-11-01

Two-dimensional (2D) topological insulators (TIs, or quantum spin Hall insulators) are special insulators that possess bulk 2D electronic energy gap and time-reversal symmetry protected one-dimensional (1D) edge state. Carriers in the edge state have the property of spin-momentum locking, enabling dissipation-free conduction along the 1D edge. The existence of 2D TIs was confirmed by experiments in semiconductor quantum wells. However, the 2D bulk gaps in those quantum wells are extremely small, greatly limiting potential application in future electronics and spintronics. Despite this limitation, 2D TIs with a large bulk gap attracted plenty of interest. In this paper, recent progress in searching for TIs with a large bulk gap is reviewed briefly. We start by introducing some theoretical predictions of these new materials and then discuss some recent important achievements in crystal growth and characterization. Project supported by the National Natural Science Foundation of China (Grant Nos. U1632272, 11574201, and 11521404). D. Q. acknowledges support from the Changjiang Scholars Program, China and the Program for Professor of Special Appointment (Eastern Scholar), China.

Electronic properties of one-dimensional nanostructures of the Bi2Se3 topological insulator

NASA Astrophysics Data System (ADS)

Virk, Naunidh; Autès, Gabriel; Yazyev, Oleg V.

2018-04-01

We theoretically study the electronic structure and spin properties of one-dimensional nanostructures of the prototypical bulk topological insulator Bi2Se3 . Realistic models of experimentally observed Bi2Se3 nanowires and nanoribbons are considered using the tight-binding method. At low energies, the band structures are composed of a series of evenly spaced degenerate subbands resulting from circumferential confinement of the topological surface states. The direct band gaps due to the nontrivial π Berry phase show a clear dependence on the circumference. The spin-momentum locking of the topological surface states results in a pronounced 2 π spin rotation around the circumference with the degree of spin polarization dependent on the momentum along the nanostructure. Overall, the band structures and spin textures are more complicated for nanoribbons, which expose two distinct facets. The effects of reduced dimensionality are rationalized with the help of a simple model that considers circumferential quantization of the topological surface states. Furthermore, the surface spin density induced by an electric current along the nanostructure shows a pronounced oscillatory dependence on the charge-carrier energy, which can be exploited in spintronics applications.

Quantized Faraday and Kerr rotation and axion electrodynamics of a 3D topological insulator

NASA Astrophysics Data System (ADS)

Wu, Liang; Salehi, M.; Koirala, N.; Moon, J.; Oh, S.; Armitage, N. P.

2016-12-01

Topological insulators have been proposed to be best characterized as bulk magnetoelectric materials that show response functions quantized in terms of fundamental physical constants. Here, we lower the chemical potential of three-dimensional (3D) Bi2Se3 films to ~30 meV above the Dirac point and probe their low-energy electrodynamic response in the presence of magnetic fields with high-precision time-domain terahertz polarimetry. For fields higher than 5 tesla, we observed quantized Faraday and Kerr rotations, whereas the dc transport is still semiclassical. A nontrivial Berry’s phase offset to these values gives evidence for axion electrodynamics and the topological magnetoelectric effect. The time structure used in these measurements allows a direct measure of the fine-structure constant based on a topological invariant of a solid-state system.

Widespread spin polarization effects in photoemission from topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations ofmore » photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.« less

Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

NASA Astrophysics Data System (ADS)

Zhang, Jian-Min; Lian, Ruqian; Yang, Yanmin; Xu, Guigui; Zhong, Kehua; Huang, Zhigao

2017-03-01

External electric field control of topological surface states (SSs) is significant for the next generation of condensed matter research and topological quantum devices. Here, we present a first-principles study of the SSs in the magnetic topological insulator (MTI) Cr-doped Bi2Se3 under external electric field. The charge transfer, electric potential, band structure and magnetism of the pure and Cr doped Bi2Se3 film have been investigated. It is found that the competition between charge transfer and spin-orbit coupling (SOC) will lead to an electrically tunable band gap in Bi2Se3 film under external electric field. As Cr atom doped, the charge transfer of Bi2Se3 film under external electric field obviously decreases. Remarkably, the band gap of Cr doped Bi2Se3 film can be greatly engineered by the external electric field due to its special band structure. Furthermore, magnetic coupling of Cr-doped Bi2Se3 could be even mediated via the control of electric field. It is demonstrated that external electric field plays an important role on the electronic and magnetic properties of Cr-doped Bi2Se3 film. Our results may promote the development of electronic and spintronic applications of magnetic topological insulator.

Edge-entanglement spectrum correspondence in a nonchiral topological phase and Kramers-Wannier duality

NASA Astrophysics Data System (ADS)

Ho, Wen Wei; Cincio, Lukasz; Moradi, Heidar; Gaiotto, Davide; Vidal, Guifre

2015-03-01

In a system with chiral topological order, there is a remarkable correspondence between the edge and entanglement spectra: the low-energy spectrum of the system in the presence of a physical edge coincides with the lowest part of the entanglement spectrum (ES) across a virtual cut of the system into two parts, up to rescaling and shifting. This correspondence is believed to be due to the existence of protected gapless edge modes. In this paper, we explore whether the edge-entanglement spectrum correspondence extends to nonchiral topological phases, where there are no protected gapless edge modes. Specifically, we consider the Wen-plaquette model, which is equivalent to the Kitaev toric code model and has Z2 topological order (quantum double of Z2) . The unperturbed Wen-plaquette model displays an exact correspondence: both the edge and entanglement spectra within each topological sector a (a =1 ,⋯,4 ) are flat and equally degenerate. Here, we show, through a detailed microscopic calculation, that in the presence of generic local perturbations: (i) the effective degrees of freedom for both the physical edge and the entanglement cut consist of a (spin-1 /2 ) spin chain, with effective Hamiltonians Hedgea and Henta, respectively, both of which have a Z2 symmetry enforced by the bulk topological order; (ii) there is in general no match between the low-energy spectra of Hedgea and Henta, that is, there is no edge-ES correspondence. However, if supplement the Z2 topological order with a global symmetry (translational invariance along the edge/entanglement cut), i.e., by considering the Wen-plaquette model as a symmetry-enriched topological phase (SET), then there is a finite domain in Hamiltonian space in which both Hedgea and Henta realize the critical Ising model, whose low-energy effective theory is the c =1 /2 Ising CFT. This is achieved because the presence of the global symmetry implies that the effective degrees of freedom of both the edge and entanglement cut are governed by Kramers-Wannier self-dual Hamiltonians, in addition to them being Z2 symmetric, which is imposed by the topological order. Thus, by considering the Wen-plaquette model as a SET, the topological order in the bulk together with the translation invariance of the perturbations along the edge/cut imply an edge-ES correspondence at least in some finite domain in Hamiltonian space.

Microstructural and magneto-transport characterization of Bi2SexTe3-x topological insulator thin films grown by pulsed laser deposition method

NASA Astrophysics Data System (ADS)

Jin, Zhenghe; Kumar, Raj; Hunte, Frank; Narayan, Jay; Kim, Ki Wook; North Carolina State University Team

Bi2SexTe3-x topological insulator thin films were grown on Al2O3 (0001) substrate by pulsed laser deposition (PLD). XRD and other structural characterization measurements confirm the growth of the textured Bi2SexTe3-x thin films on Al2O3 substrate. The magneto-transport properties of thick and thin Þlms were investigated to study the effect of thickness on the topological insulator properties of the Bi2SexTe3 - x films. A pronounced semiconducting behavior with a highly insulating ground state was observed in the resistivity vs. temperature data. The presence of the weak anti-localization (WAL) effect with a sharp cusp in the magnetoresistance measurements confirms the 2-D surface transport originating from the TSS in Bi2SexTe3-x TI films. A high fraction of surface transport is observed in the Bi2SexTe3-x TI thin films which decreases in Bi2SexTe3-x TI thick films. The Cosine (θ) dependence of the WAL effect supports the observation of a high proportion of 2-D surface state contribution to overall transport properties of the Bi2SexTe3-x TI thin films. Our results show promise that high quality Bi2SexTe3-x TI thin films with significant surface transport can be grown by PLD method to exploit the exotic properties of the surface transport in future generation spintronic devices. This work was supported, in part, by National Science Foundation ECCS-1306400 and FAME.

Floquet topological polaritons in semiconductor microcavities

NASA Astrophysics Data System (ADS)

Ge, R.; Broer, W.; Liew, T. C. H.

2018-05-01

We propose and model Floquet topological polaritons in semiconductor microcavities, using the interference of frequency-detuned coherent fields to provide a time-periodic potential. For arbitrarily weak field strength, where the Floquet frequency is larger than the relevant bandwidth of the system, a Chern insulator is obtained. As the field strength is increased, a topological phase transition is observed with an unpaired Dirac cone proclaiming the anomalous Floquet topological insulator. As the relevant bandwidth increases even further, an exotic Chern insulator with flatband is observed with unpaired Dirac cone at the second critical point. Considering the polariton spin degree of freedom, we find that the choice of field polarization allows oppositely polarized polaritons to either copropagate or counterpropagate in chiral edge states.

Observation of zone folding induced acoustic topological insulators and the role of spin-mixing defects

NASA Astrophysics Data System (ADS)

Deng, Yuanchen; Ge, Hao; Tian, Yuan; Lu, Minghui; Jing, Yun

2017-11-01

This article reports on the experimental realization of a flow-free, pseudospin-based acoustic topological insulator designed using the strategy of zone folding. Robust sound one-way propagation is demonstrated with the presence of non-spin-mixing defects. On the other hand, it is shown that spin-mixing defects, which break the geometric symmetry and therefore the pseudo-time-reversal symmetry, can open up nontrivial band gaps within the edge state frequency band, and their width can be tailored by the extent of the defect. This provides a possible route for realizing tunable acoustic topological insulators.

Topological insulating phases from two-dimensional nodal loop semimetals

NASA Astrophysics Data System (ADS)

Li, Linhu; Araújo, Miguel A. N.

2016-10-01

Starting from a minimal model for a two-dimensional nodal loop semimetal, we study the effect of chiral mass gap terms. The resulting Dirac loop anomalous Hall insulator's Chern number is the phase-winding number of the mass gap terms on the loop. We provide simple lattice models, analyze the topological phases, and generalize a previous index characterizing topological transitions. The responses of the Dirac loop anomalous Hall and quantum spin Hall insulators to a magnetic field's vector potential are also studied both in weak- and strong-field regimes, as well as the edge states in a ribbon geometry.

Asymmetric d-wave superconducting topological insulator in proximity with a magnetic order

NASA Astrophysics Data System (ADS)

Khezerlou, M.; Goudarzi, H.; Asgarifar, S.

2018-02-01

In the framework of the Dirac-Bogoliubov-de Gennes formalism, we investigate the transport properties in the surface of a 3-dimensional topological insulator-based hybrid structure, where the ferromagnetic and superconducting orders are simultaneously induced to the surface states via the proximity effect. The superconductor gap is taken to be spin-singlet d-wave symmetry. The asymmetric role of this gap respect to the electron-hole exchange, in one hand, affects the topological insulator superconducting binding excitations and, on the other hand, gives rise to forming distinct Majorana bound states at the ferromagnet/superconductor interface. We propose a topological insulator N/F/FS junction and proceed to clarify the role of d-wave asymmetry pairing in the resulting subgap and overgap tunneling conductance. The perpendicular component of magnetizations in F and FS regions can be at the parallel and antiparallel configurations leading to capture the experimentally important magnetoresistance (MR) of junction. It is found that the zero-bias conductance is strongly sensitive to the magnitude of magnetization in FS region mzfs and orbital rotated angle α of superconductor gap. The negative MR only occurs in zero orbital rotated angle. This result can pave the way to distinguish the unconventional superconducting state in the relating topological insulator hybrid structures.

Topological characters in Fe (Te1 -xSex ) thin films

NASA Astrophysics Data System (ADS)

Wu, Xianxin; Qin, Shengshan; Liang, Yi; Fan, Heng; Hu, Jiangping

2016-03-01

We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe1 -xSex has nontrivial Z2 topological invariance which originates from the parity exchange at the Γ point of the Brillouin zone. The nontrivial topology is mainly controlled by the Te(Se) height. Adjusting the anion height, which can be realized as the function of lattice constants and x in FeTe1 -xSex , can drive a topological phase transition. In a bulk material, the two-dimensional Z2 topology invariance is extended to a strong three-dimensional one. In a thin film, we predict that the topological invariance oscillates with the number of layers. The results can also be applied to iron pnictides. Our research establishes FeTe1 -xSex as a unique system to integrate high-Tc superconductivity and topological properties in a single electronic structure.

Doping induced carrier and band-gap modulation in bulk versus nano for topological insulators: A test case of Stibnite

NASA Astrophysics Data System (ADS)

Maji, Tuhin Kumar; Pal, Samir Kumar; Karmakar, Debjani

2018-04-01

We aim at comparing the electronic properties of topological insulator Sb2S3 in bulk and Nanorod using density-functional scheme and investigating the effects of Se-doping at chalcogen-site. While going from bulk to nano, there is a drastic change in the band gap due to surface-induced strain. However, the trend of band gap modulation with increased Se doping is more prominent in bulk. Interestingly, Se-doping introduces different type of carriers in bulk and nano.

Two-dimensional topological photonic systems

NASA Astrophysics Data System (ADS)

Sun, Xiao-Chen; He, Cheng; Liu, Xiao-Ping; Lu, Ming-Hui; Zhu, Shi-Ning; Chen, Yan-Feng

2017-09-01

The topological phase of matter, originally proposed and first demonstrated in fermionic electronic systems, has drawn considerable research attention in the past decades due to its robust transport of edge states and its potential with respect to future quantum information, communication, and computation. Recently, searching for such a unique material phase in bosonic systems has become a hot research topic worldwide. So far, many bosonic topological models and methods for realizing them have been discovered in photonic systems, acoustic systems, mechanical systems, etc. These discoveries have certainly yielded vast opportunities in designing material phases and related properties in the topological domain. In this review, we first focus on some of the representative photonic topological models and employ the underlying Dirac model to analyze the edge states and geometric phase. On the basis of these models, three common types of two-dimensional topological photonic systems are discussed: 1) photonic quantum Hall effect with broken time-reversal symmetry; 2) photonic topological insulator and the associated pseudo-time-reversal symmetry-protected mechanism; 3) time/space periodically modulated photonic Floquet topological insulator. Finally, we provide a summary and extension of this emerging field, including a brief introduction to the Weyl point in three-dimensional systems.

Chiral Topological Orders in an Optical Raman Lattice (Open Source)

DTIC Science & Technology

2016-03-01

towhomany correspondence should be addressed. E-mail: xiongjunliu@pku.edu.cn Keywords: optical lattice, gaugefields, Chern insulator , topological order...onlymeasuring the Bloch states in the two symmetricmomentumpoints of the first Brillouin zone. Further, we also show that heating in the present optical Raman...spontaneous decay of excited states. Realization of a gapped insulating topological state typically necessitates an optical lattice and synthetic

Quantized transport and steady states of Floquet topological insulators

NASA Astrophysics Data System (ADS)

Esin, Iliya; Rudner, Mark S.; Refael, Gil; Lindner, Netanel H.

2018-06-01

Robust electronic edge or surface modes play key roles in the fascinating quantized responses exhibited by topological materials. Even in trivial materials, topological bands and edge states can be induced dynamically by a time-periodic drive. Such Floquet topological insulators (FTIs) inherently exist out of equilibrium; the extent to which they can host quantized transport, which depends on the steady-state population of their dynamically induced edge states, remains a crucial question. In this work, we obtain the steady states of two-dimensional FTIs in the presence of the natural dissipation mechanisms present in solid state systems. We give conditions under which the steady-state distribution resembles that of a topological insulator in the Floquet basis. In this state, the distribution in the Floquet edge modes exhibits a sharp feature akin to a Fermi level, while the bulk hosts a small density of excitations. We determine the regimes where topological edge-state transport persists and can be observed in FTIs.

Understanding the Giant Enhancement of Exchange Interaction in Bi 2 Se 3 - EuS Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jeongwoo; Kim, Kyoung-Whan; Wang, Hui

2017-07-01

A recent experiment indicated that a ferromagnetic EuS film in contact with a topological insulator Bi 2 Se 3 might show a largely enhanced Curie temperature and perpendicular magnetic anisotropy [F. Katmis et al., Nature (London) 533, 513 (2016).]. Through systematic density functional calculations, we demonstrate that in addition to the factor that Bi 2 Se 3 has a strong spin orbit coupling, the topological surface states are crucial to make these unusual behaviors robust as they hybridize with EuS states and extend rather far into the magnetic layers. The magnetic moments of Eu atoms are nevertheless not much enhanced,more » unlike what was reported in the experiment. Our results and model analyses provide useful insights for how these quantities are linked, and pave a way for the control of properties of magnetic films via contact with topological insulators.« less

Nonlinear Dirac cones

NASA Astrophysics Data System (ADS)

Bomantara, Raditya Weda; Zhao, Wenlei; Zhou, Longwen; Gong, Jiangbin

2017-09-01

Physics arising from two-dimensional (2D) Dirac cones has been a topic of great theoretical and experimental interest to studies of gapless topological phases and to simulations of relativistic systems. Such 2D Dirac cones are often characterized by a π Berry phase and are destroyed by a perturbative mass term. By considering mean-field nonlinearity in a minimal two-band Chern insulator model, we obtain a different type of Dirac cone that is robust to local perturbations without symmetry restrictions. Due to a different pseudospin texture, the Berry phase of the Dirac cone is no longer quantized in π , and can be continuously tuned as an order parameter. Furthermore, in an Aharonov-Bohm (AB) interference setup to detect such Dirac cones, the adiabatic AB phase is found to be π both theoretically and computationally, offering an observable topological invariant and a fascinating example where the Berry phase and AB phase are fundamentally different. We hence discover a nonlinearity-induced quantum phase transition from a known topological insulating phase to an unusual gapless topological phase.

Room temperature quantum spin Hall insulators with a buckled square lattice.

PubMed

Luo, Wei; Xiang, Hongjun

2015-05-13

Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic impurities since the only available backscattering channel is forbidden. Currently, most known 2D TIs are based on a hexagonal (specifically, honeycomb) lattice. Here, we propose that there exists the quantum spin Hall effect (QSHE) in a buckled square lattice. Through performing global structure optimization, we predict a new three-layer quasi-2D (Q2D) structure, which has the lowest energy among all structures with the thickness less than 6.0 Å for the BiF system. It is identified to be a Q2D TI with a large band gap (0.69 eV). The electronic states of the Q2D BiF system near the Fermi level are mainly contributed by the middle Bi square lattice, which are sandwiched by two inert BiF2 layers. This is beneficial since the interaction between a substrate and the Q2D material may not change the topological properties of the system, as we demonstrate in the case of the NaF substrate. Finally, we come up with a new tight-binding model for a two-orbital system with the buckled square lattice to explain the low-energy physics of the Q2D BiF material. Our study not only predicts a QSH insulator for realistic room temperature applications but also provides a new lattice system for engineering topological states such as quantum anomalous Hall effect.

Superconducting proximity effect in a topological insulator using Fe(Te, Se)

NASA Astrophysics Data System (ADS)

Zhao, He; Rachmilowitz, Bryan; Ren, Zheng; Han, Ruobin; Schneeloch, J.; Zhong, Ruidan; Gu, Genda; Wang, Ziqiang; Zeljkovic, Ilija

2018-06-01

Interest in the superconducting proximity effect has recently been reignited by theoretical predictions that it could be used to achieve topological superconductivity. Low-Tc superconductors have predominantly been used in this effort, but small energy scales of ˜1 meV have hindered the characterization of the emergent electronic phase, limiting it to extremely low temperatures. In this work, we use molecular beam epitaxy to grow topological insulator B i2T e3 in a range of thicknesses on top of a high-Tc superconductor Fe(Te,Se). Using scanning tunneling microscopy and spectroscopy, we detect Δind as high as ˜3.5 meV, which is the largest reported gap induced by proximity to an s -wave superconductor to date. We find that Δind decays with B i2T e3 thickness, but remains finite even after the topological surface states have been formed. Finally, by imaging the scattering and interference of surface state electrons, we provide a microscopic visualization of the fully gapped B i2T e3 surface state due to Cooper pairing. Our results establish Fe-based high-Tc superconductors as a promising new platform for realizing high-Tc topological superconductivity.

Prediction of weak and strong topological insulators in layered semiconductors.

NASA Astrophysics Data System (ADS)

Felser, Claudia

2013-03-01

We investigate a new class of ternary materials such as LiAuSe and KHgSb with a honeycomb structure in Au-Se and Hg-Sb layers. We demonstrate the band inversion in these materials similar to HgTe, which is a strong precondition for existence of the topological surface states. In contrast with graphene, these materials exhibit strong spin-orbit coupling and a small direct band gap at the point. Since these materials are centrosymmetric, it is straightforward to determine the parity of their wave functions, and hence their topological character. Surprisingly, the compound with strong spin-orbit coupling (KHgSb) is trivial, whereas LiAuSe is found to be a topological insulator. However KHgSb is a weak topological insulators in case of an odd number of layers in the primitive unit cell. Here, the single-layered KHgSb shows a large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors. In collaboration with Binghai Yan, Lukas Müchler, Hai-Jun Zhang, Shou-Cheng Zhang and Jürgen Kübler.

Heavy surface state in a possible topological Kondo insulator: Magnetothermoelectric transport on the (011) plane of SmB 6

DOE PAGES

Luo, Yongkang; Chen, Hua; Dai, Jianhui; ...

2015-02-25

Motivated by the high sensitivity to Fermi surface topology and scattering mechanisms in magnetothermoelectric transport, we have measured the thermopower and Nernst effect on the (011) plane of the proposed topological Kondo insulator SmB 6. These experiments, together with electrical resistivity and Hall effect measurements, suggest that the (011) plane also harbors a metallic surface with an effective mass on the order of 10–10 2 m 0. The surface and bulk conductances are well distinguished in these measurements and are categorized into metallic and nondegenerate semiconducting regimes, respectively. As a result, electronic correlations play an important role in enhancing scatteringmore » and also contribute to the heavy surface state.« less

Bulk superconducting phase with a full energy gap in the doped topological insulator Cu(x)Bi₂Se₃.

PubMed

Kriener, M; Segawa, Kouji; Ren, Zhi; Sasaki, Satoshi; Ando, Yoichi

2011-03-25

The superconductivity recently found in the doped topological insulator Cu(x)Bi₂Se₃ offers a great opportunity to search for a topological superconductor. We have successfully prepared a single-crystal sample with a large shielding fraction and measured the specific-heat anomaly associated with the superconductivity. The temperature dependence of the specific heat suggests a fully gapped, strong-coupling superconducting state, but the BCS theory is not in full agreement with the data, which hints at a possible unconventional pairing in Cu(x)Bi₂Se₃. Also, the evaluated effective mass of 2.6m(e) (m(e) is the free electron mass) points to a large mass enhancement in this material.

Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4 -xSex topological insulator

NASA Astrophysics Data System (ADS)

Shvets, I. A.; Klimovskikh, I. I.; Aliev, Z. S.; Babanly, M. B.; Sánchez-Barriga, J.; Krivenkov, M.; Shikin, A. M.; Chulkov, E. V.

2017-12-01

Detailed comparative theoretical and experimental study of electronic properties and spin structure was carried out for a series of Pb-based quaternary compounds PbBi2Te4 -xSex . For all values of x , these compounds are theoretically predicted to be topological insulators, possessing at high Se content a remarkably large band gap and a Dirac point isolated from bulk states. Using spin- and angle-resolved photoemission spectroscopy, it was shown that the PbBi2Te2Se2 and PbBi2Te1.4Se2.6 compounds are characterized by well-defined spin-polarized topological surface state in the bulk gap. To define the probable distribution of atoms over the atomic sites for these samples, we performed ab initio calculations in ordered and disordered configurations of the unit cell. We found that theoretical calculations better reproduce photoemission data when Te atoms are placed in the outermost layers of the septuple layer block.

Universal quantum computing using (Zd) 3 symmetry-protected topologically ordered states

NASA Astrophysics Data System (ADS)

Chen, Yanzhu; Prakash, Abhishodh; Wei, Tzu-Chieh

2018-02-01

Measurement-based quantum computation describes a scheme where entanglement of resource states is utilized to simulate arbitrary quantum gates via local measurements. Recent works suggest that symmetry-protected topologically nontrivial, short-ranged entangled states are promising candidates for such a resource. Miller and Miyake [npj Quantum Inf. 2, 16036 (2016), 10.1038/npjqi.2016.36] recently constructed a particular Z2×Z2×Z2 symmetry-protected topological state on the Union Jack lattice and established its quantum-computational universality. However, they suggested that the same construction on the triangular lattice might not lead to a universal resource. Instead of qubits, we generalize the construction to qudits and show that the resulting (d -1 ) qudit nontrivial Zd×Zd×Zd symmetry-protected topological states are universal on the triangular lattice, for d being a prime number greater than 2. The same construction also holds for other 3-colorable lattices, including the Union Jack lattice.

Quantum phase transition and protected ideal transport in a Kondo chain

DOE PAGES

Tsvelik, A. M.; Yevtushenko, O. M.

2015-11-30

We study the low energy physics of a Kondo chain where electrons from a one-dimensional band interact with magnetic moments via an anisotropic exchange interaction. It is demonstrated that the anisotropy gives rise to two different phases which are separated by a quantum phase transition. In the phase with easy plane anisotropy, Z2 symmetry between sectors with different helicity of the electrons is broken. As a result, localization effects are suppressed and the dc transport acquires (partial) symmetry protection. This effect is similar to the protection of the edge transport in time-reversal invariant topological insulators. The phase with easy axismore » anisotropy corresponds to the Tomonaga-Luttinger liquid with a pronounced spin-charge separation. The slow charge density wave modes have no protection against localizatioin.« less

Interfacial superconductivity in a bi-collinear antiferromagnetically ordered FeTe monolayer on a topological insulator

NASA Astrophysics Data System (ADS)

Manna, S.; Kamlapure, A.; Cornils, L.; Hänke, T.; Hedegaard, E. M. J.; Bremholm, M.; Iversen, B. B.; Hofmann, Ph.; Wiebe, J.; Wiesendanger, R.

2017-01-01

The discovery of high-temperature superconductivity in Fe-based compounds triggered numerous investigations on the interplay between superconductivity and magnetism, and on the enhancement of transition temperatures through interface effects. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range antiferromagnetic (AFM) order, although the exact microscopic picture remains elusive because of the lack of atomically resolved data. Here we present spin-polarized scanning tunnelling spectroscopy of ultrathin FeTe1-xSex (x=0, 0.5) films on bulk topological insulators. Surprisingly, we find an energy gap at the Fermi level, indicating superconducting correlations up to Tc~6 K for one unit cell FeTe grown on Bi2Te3, in contrast to the non-superconducting bulk FeTe. The gap spatially coexists with bi-collinear AFM order. This finding opens perspectives for theoretical studies of competing orders in Fe-based superconductors and for experimental investigations of exotic phases in superconducting layers on topological insulators.

Zero-field edge plasmons in a magnetic topological insulator [Zero-field edge magnetoplasmons in a magnetic topological insulator

DOE PAGES

Mahoney, Alice C.; Colless, James I.; Peeters, Lucas; ...

2017-11-28

Incorporating ferromagnetic dopants into three-dimensional topological insulator thin films has recently led to the realisation of the quantum anomalous Hall effect. These materials are of great interest since they may support electrical currents that flow without resistance, even at zero magnetic field. To date, the quantum anomalous Hall effect has been investigated using low-frequency transport measurements. However, transport results can be difficult to interpret due to the presence of parallel conductive paths, or because additional non-chiral edge channels may exist. Here we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb) 2Te 3. Wemore » identify features associated with chiral edge plasmons, a signature that robust edge channels are intrinsic to this material system. Finally, our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for an on-chip circuit element of practical importance: the zero-field microwave circulator.« less

Zero-field edge plasmons in a magnetic topological insulator [Zero-field edge magnetoplasmons in a magnetic topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahoney, Alice C.; Colless, James I.; Peeters, Lucas

Incorporating ferromagnetic dopants into three-dimensional topological insulator thin films has recently led to the realisation of the quantum anomalous Hall effect. These materials are of great interest since they may support electrical currents that flow without resistance, even at zero magnetic field. To date, the quantum anomalous Hall effect has been investigated using low-frequency transport measurements. However, transport results can be difficult to interpret due to the presence of parallel conductive paths, or because additional non-chiral edge channels may exist. Here we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb) 2Te 3. Wemore » identify features associated with chiral edge plasmons, a signature that robust edge channels are intrinsic to this material system. Finally, our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for an on-chip circuit element of practical importance: the zero-field microwave circulator.« less

Insulator function and topological domain border strength scale with architectural protein occupancy

PubMed Central

2014-01-01

Background Chromosome conformation capture studies suggest that eukaryotic genomes are organized into structures called topologically associating domains. The borders of these domains are highly enriched for architectural proteins with characterized roles in insulator function. However, a majority of architectural protein binding sites localize within topological domains, suggesting sites associated with domain borders represent a functionally different subclass of these regulatory elements. How topologically associating domains are established and what differentiates border-associated from non-border architectural protein binding sites remain unanswered questions. Results By mapping the genome-wide target sites for several Drosophila architectural proteins, including previously uncharacterized profiles for TFIIIC and SMC-containing condensin complexes, we uncover an extensive pattern of colocalization in which architectural proteins establish dense clusters at the borders of topological domains. Reporter-based enhancer-blocking insulator activity as well as endogenous domain border strength scale with the occupancy level of architectural protein binding sites, suggesting co-binding by architectural proteins underlies the functional potential of these loci. Analyses in mouse and human stem cells suggest that clustering of architectural proteins is a general feature of genome organization, and conserved architectural protein binding sites may underlie the tissue-invariant nature of topologically associating domains observed in mammals. Conclusions We identify a spectrum of architectural protein occupancy that scales with the topological structure of chromosomes and the regulatory potential of these elements. Whereas high occupancy architectural protein binding sites associate with robust partitioning of topologically associating domains and robust insulator function, low occupancy sites appear reserved for gene-specific regulation within topological domains. PMID:24981874

Multiphoton excitation and high-harmonics generation in topological insulator.

PubMed

Avetissian, H K; Avetissian, A K; Avchyan, B R; Mkrtchian, G F

2018-05-10

Multiphoton interaction of coherent electromagnetic radiation with 2D metallic carriers confined on the surface of the 3D topological insulator is considered. A microscopic theory describing the nonlinear interaction of a strong wave and metallic carriers with many-body Coulomb interaction is developed. The set of integrodifferential equations for the interband polarization and carrier occupation distribution is solved numerically. Multiphoton excitation of Fermi-Dirac sea of 2D massless carriers is considered for a THz pump wave. It is shown that in the moderately strong pump wave field along with multiphoton interband/intraband transitions the intense radiation of high harmonics takes place.

Multiphoton excitation and high-harmonics generation in topological insulator

NASA Astrophysics Data System (ADS)

Avetissian, H. K.; Avetissian, A. K.; Avchyan, B. R.; Mkrtchian, G. F.

2018-05-01

Multiphoton interaction of coherent electromagnetic radiation with 2D metallic carriers confined on the surface of the 3D topological insulator is considered. A microscopic theory describing the nonlinear interaction of a strong wave and metallic carriers with many-body Coulomb interaction is developed. The set of integrodifferential equations for the interband polarization and carrier occupation distribution is solved numerically. Multiphoton excitation of Fermi–Dirac sea of 2D massless carriers is considered for a THz pump wave. It is shown that in the moderately strong pump wave field along with multiphoton interband/intraband transitions the intense radiation of high harmonics takes place.

Microscopic effects of Dy doping in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

2018-05-01

Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

Ultrafast transient photocarrier dynamics of the bulk-insulating topological insulator B i1.5S b0.5T e1.7S e1.3

NASA Astrophysics Data System (ADS)

Choi, Young Gwan; Zhung, Chan June; Park, Sun-Hee; Park, Joonbum; Kim, Jun Sung; Kim, Seongheun; Park, Jaehun; Lee, J. S.

2018-02-01

Using optical-pump terahertz-probe spectroscopy, we investigated an ultrafast photocarrier relaxation behavior in a B i1.5S b0.5T e1.7S e1.3 (BSTS) single crystal, which is one of the most bulk-insulating topological insulators. Compared to n -type bulk-metallic B i2S e3 , we found that BSTS endows distinct behaviors in its photocarrier dynamics; the relaxation time turns out to be an order of magnitude longer, and the transient conductance spectrum exhibits a nonlinear increase as a function of the pumping power. Also, we observed an abrupt reduction of the photocarrier scattering rate in several picoseconds after the initial photoexcitation. We discuss these intriguing experimental observations based on a bulk-to-surface carrier injection assisted by the built-in electric field near the surface and electron-phonon scattering.

Robust odd-parity superconductivity in the doped topological insulator Nb x Bi 2 Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Claus, H.; ...

2017-09-15

We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological insulator Nb xBi 2Se 3 (x = 0.25) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature Tc decreases without indication of saturation with increasing defect concentration, and the corresponding scattering rates far surpass expectations based on conventional theory. The low-temperature variation of the London penetration depth Δλ(T) follows a power law [Δλ(T)~T 2] indicating the presence of symmetry-protected point nodes. Lastly, our results are consistent with the proposed robust nematic E u pairing state in this material.

Robust odd-parity superconductivity in the doped topological insulator NbxBi2Se3

NASA Astrophysics Data System (ADS)

Smylie, M. P.; Willa, K.; Claus, H.; Snezhko, A.; Martin, I.; Kwok, W.-K.; Qiu, Y.; Hor, Y. S.; Bokari, E.; Niraula, P.; Kayani, A.; Mishra, V.; Welp, U.

2017-09-01

We present resistivity and magnetization measurements on proton-irradiated crystals demonstrating that the superconducting state in the doped topological insulator NbxBi2Se3 (x =0.25 ) is surprisingly robust against disorder-induced electron scattering. The superconducting transition temperature Tc decreases without indication of saturation with increasing defect concentration, and the corresponding scattering rates far surpass expectations based on conventional theory. The low-temperature variation of the London penetration depth Δ λ (T ) follows a power law [Δ λ (T ) ˜T2] indicating the presence of symmetry-protected point nodes. Our results are consistent with the proposed robust nematic Eu pairing state in this material.

High spin state driven magnetism and thermoelectricity in Mn doped topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Maurya, V. K.; Dong, C. L.; Chen, C. L.; Asokan, K.; Patnaik, S.

2018-06-01

We report on the synthesis, and structural - magnetic characterizations of Mn doped Bi2Se3 towards achieving a magnetically doped topological insulator. High quality single crystals of MnxBi2-xSe3 (x = 0, 0.03, 0.05, 0.1) are grown and analysed by X-ray diffraction (XRD), Low Energy Electron Diffraction (LEED), Scanning electron microscopy (SEM), and X-ray absorption near-edge structure spectroscopy (XANES). Magnetic properties of these samples under ZFC-FC protocol and isothermal magnetization confirm ferromagnetic correlation above x = 0.03 value. XANES measurements confirm that the dopant Mn is in Mn2+ state. This is further reconfirmed to be in high spin state by fitting magnetic data with Brillouin function for J = 5/2. Both Hall and Seebeck measurements indicate a sign change of charge carriers above x = 0.03 value of Mn doping. We propose Mn doped Bi2Se3 to be a potential candidate for electromagnetic and thermoelectric device applications involving topological surface states.

Coexistence of type-II Dirac point and weak topological phase in Pt 3 Sn

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Minsung; Wang, Cai -Zhuang; Ho, Kai -Ming

Intriguing topological phases may appear in both insulating and semimetallic states. Topological insulators exhibit topologically nontrivial band inversion, while topological Dirac/Weyl semimetals show “relativistic” linear band crossings. Here, we report an unusual topological state of Pt 3Sn, where the two topological features appear simultaneously. Based on first-principles calculations, we show that Pt 3Sn is a three-dimensional weak topological semimetal with topologically nontrivial band inversion between the valence and conduction bands, where the band structure also possesses type-II Dirac points at the boundary of two electron pockets. The formation of the Dirac points can be understood in terms of the representationsmore » of relevant symmetry groups and the compatibility relations. The topological surface states appear in accordance with the nontrivial bulk band topology. As a result, the unique coexistence of the two distinct topological features in Pt 3Sn enlarges the material scope in topological physics, and is potentially useful for spintronics.« less

Coexistence of type-II Dirac point and weak topological phase in Pt 3 Sn

DOE PAGES

Kim, Minsung; Wang, Cai -Zhuang; Ho, Kai -Ming

2017-11-06

Intriguing topological phases may appear in both insulating and semimetallic states. Topological insulators exhibit topologically nontrivial band inversion, while topological Dirac/Weyl semimetals show “relativistic” linear band crossings. Here, we report an unusual topological state of Pt 3Sn, where the two topological features appear simultaneously. Based on first-principles calculations, we show that Pt 3Sn is a three-dimensional weak topological semimetal with topologically nontrivial band inversion between the valence and conduction bands, where the band structure also possesses type-II Dirac points at the boundary of two electron pockets. The formation of the Dirac points can be understood in terms of the representationsmore » of relevant symmetry groups and the compatibility relations. The topological surface states appear in accordance with the nontrivial bulk band topology. As a result, the unique coexistence of the two distinct topological features in Pt 3Sn enlarges the material scope in topological physics, and is potentially useful for spintronics.« less

Study on temperature sensitivity of topological insulators based on long-period fiber grating

NASA Astrophysics Data System (ADS)

Luo, Jianhua; Zhao, Chenghai; Li, Jianbo; He, Mengdong

2017-06-01

Based on a long-period fiber grating, we conducted experimental research on the temperature sensitivity of topological insulators. The long-period fiber grating and topological insulators solution were encapsulated in a capillary tube using UV glue, and the temperature response was measured. Within a range of 35 to 75 centigrade, one resonance dip of a long-period fiber grating exhibits a redshift of 1.536 nm. The temperature sensitivity is about 7.7 times of an ordinary long-period fiber grating's sensitivity (0.005 nm/°C). A numerical simulation is also performed on the basis of the experiments.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shoup, R.W.; Long, F.; Martin, T.H.

Sandia has developed PBFA-Z, a 20-MA driver for z-pinch experiments by replacing the water lines, insulator stack. and MITLs on PBFA II with hardware of a new design. The PBFA-Z accelerator was designed to deliver 20 MA to a 15-mg z-pinch load in 100 ns. The accelerator was modeled using circuit codes to determine the time-dependent voltage and current waveforms at the input and output of the water lines, the insulator stack, and the MITLs. The design of the vacuum insulator stack was dictated by the drive voltage, the electric field stress and grading requirements, the water line and MITLmore » interface requirements, and the machine operations and maintenance requirements. The insulator stack consists of four separate modules, each of a different design because of different voltage drive and hardware interface requirements. The shape of the components in each module, i.e., grading rings, insulator rings, flux excluders, anode and cathode conductors, and the design of the water line and MITL interfaces, were optimized by using the electrostatic analysis codes, ELECTRO and JASON. The time-dependent performance of the insulator stacks was evaluated using IVORY, a 2-D PIC code. This paper will describe the insulator stack design, present the results of the ELECTRO and IVORY analyses, and show the results of the stack measurements.« less

Surface phonons in the topological insulators Bi2Se3 and Bi2Te3

NASA Astrophysics Data System (ADS)

Boulares, Ibrahim; Shi, Guangsha; Kioupakis, Emmanouil; Lošťák, Petr; Uher, Ctirad; Merlin, Roberto

2018-03-01

Raman scattering [K. M. F. Shahil et al., Appl. Phys. Lett. 96, 153103 (2010), V. Gnezdilov et al., Phys. Rev. B 84, 195118 (2011) and H. -H. Kung et al., Phys. Rev. B 95, 245406 (2017)], inelastic helium scattering [X. Zhu et al., Phys. Rev. Lett. 107, 186102 (2011)] and photoemission experiments [J. A. Sobota et al., Phys. Rev. Lett. 113, 157401 (2014)] on the topological insulators Bi2Se3 and Bi2Te3 show features in the range ∼ 50-160 cm-1, which have been assigned alternatively to Raman-forbidden, bulk infrared modes arising from symmetry breaking at the surface or to surface phonons, which couple to the topologically protected electronic states. Here, we present temperature- and wavelength- dependent Raman studies showing additional modes we ascribe to surface phonons in both Bi2Se3 and Bi2Te3. Our assignment is supported by density functional theory calculations revealing surface phonons at frequencies close to those of the extra peaks in the Raman data. The theoretical results also indicate that these modes are not a consequence of spin-orbit coupling and, thus, that their occurrence is unrelated to the topological properties of these materials.

New self-magnetically insulated connection of multilevel accelerators to a common load

DOE PAGES

VanDevender, J. Pace; Langston, William L.; Pasik, Michael F.; ...

2015-03-04

A new way to connect pulsed-power modules to a common load is presented. Unlike previous connectors, the clam shell magnetically insulated transmission line (CSMITL) has magnetic nulls only at large radius where the cathode electric field is kept below the threshold for emission, has only a simply connected magnetic topology to avoid plasma motion along magnetic field lines into highly stressed gaps, and has electron injectors that ensure efficient electron flow even in the limiting case of self-limited MITLs. Multilevel magnetically insulated transmission lines with a posthole convolute are the standard solution but associated losses limit the performance of state-of-the-artmore » accelerators. Mitigating these losses is critical for the next generation of pulsed-power accelerators. A CSMITL has been successfully implemented on the Saturn accelerator. A reference design for the Z accelerator is derived and presented. The design conservatively meets the design requirements and shows excellent transport efficiency in three simulations of increasing complexity: circuit simulations, electromagnetic fields only with Emphasis, fields plus electron and ion emission with Quicksilver.« less

Z3 topological order in the face-centered-cubic quantum plaquette model

NASA Astrophysics Data System (ADS)

Devakul, Trithep

2018-04-01

We examine the topological order in the resonating singlet valence plaquette (RSVP) phase of the hard-core quantum plaquette model (QPM) on the face centered cubic (FCC) lattice. To do this, we construct a Rohksar-Kivelson type Hamiltonian of local plaquette resonances. This model is shown to exhibit a Z3 topological order, which we show by identifying a Z3 topological constant (which leads to a 33-fold topological ground state degeneracy on the 3-torus) and topological pointlike charge and looplike magnetic excitations which obey Z3 statistics. We also consider an exactly solvable generalization of this model, which makes the geometrical origin of the Z3 order explicitly clear. For other models and lattices, such generalizations produce a wide variety of topological phases, some of which are novel fracton phases.

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Materials Development and Spin Transport Study of Magnetic Insulator Based Heterostructures

NASA Astrophysics Data System (ADS)

Tang, Chi

The subfield of magnetic insulator (MI) based spintronics is playing a substantial role in modern solid state physics research. Spin current in the MI is propagated in spin wave with a much longer decay length than spin-polarized carriers in conducting ferromagnet. In the MI-based hetereostructures, the adjacent non-magnetic materials can be magnetized in proximity of MI. Therefore, it is a promising system to study exotic transport phenomena such as quantum Anomalous Hall effect in topological insulator and graphene. Rare-earth Iron garnet (ReIG), a class of magnetic insulators with large electronic bandgap and high Curie temperature, stands out among various magnetic insulator materials and have attracted a great deal of attention in recent magnetic insulator based spintronics research. The first chapter of this dissertation gives a brief introduction to the spintronics research by introducing some essential concepts in the spintronics field and the most recent spin transport phenomena. The second chapter of this dissertation summarizes my work in the materials development of ReIG ferrimagnetic insulators, including exquisite control of high quality ultra-flat yttrium iron garnet (YIG) thin films with extremely low magnetic damping and engineering of strain induced robust perpendicular magnetic anisotropy in thulium iron garnet (TIG) and Bi-doped YIG films. The last chapter of this dissertation shows a systematic study in various ReIG based heterostructures, mainly divided into groups: ReIG (YIG & TIG)/heavy metal bilayers (Pd & Pt) and ReIG (YIG & TIG)/Dirac systems (graphene & topological insulator). The magneto-transport study disentangles the contribution from a spin current origin and proximity induced magnetism. Furthermore, the demonstration in the proximity coupling induced high-temperature ferromagnetic phase in low-dimensional Dirac systems, i.e. graphene and topological insulator surface states, provides new possibilities in the future spintronics applications. The modulation on the spin dynamics of magnetic insulator layer by topological insulator surface states is investigated at last, further confirming the superb properties of such magnetic insulator based spintronics systems.

Effects of topology on the adsorption of singly tethered ring polymers to attractive surfaces.

PubMed

Li, Bing; Sun, Zhao-Yan; An, Li-Jia

2015-07-14

We investigate the effect of topology on the equilibrium behavior of singly tethered ring polymers adsorbed on an attractive surface. We focus on the change of square radius of gyration Rg(2), the perpendicular component Rg⊥(2) and the parallel component Rg‖(2) to the adsorbing surface, the mean contacting number of monomers with the surface , and the monomer distribution along z-direction during transition from desorption to adsorption. We find that both of the critical point of adsorption εc and the crossover exponent ϕ depend on the knot type when the chain length of ring ranges from 48 to 400. The behaviors of Rg(2), Rg⊥(2), and Rg‖(2) are found to be dependent on the topology and the monomer-surface attractive strength. At weak adsorption, the polymer chains with more complex topology are more adsorbable than those with simple topology. However, at strong adsorption, the polymer chains with complex topology are less adsorbable. By analyzing the distribution of monomer along z-direction, we give a possible mechanism for the effect of topology on the adsorption behavior.

Simple anisotropic three-dimensional quantum spin liquid with fractonlike topological order

NASA Astrophysics Data System (ADS)

Petrova, O.; Regnault, N.

2017-12-01

We present a three-dimensional cubic lattice spin model, anisotropic in the z ̂ direction, that exhibits fractonlike order. This order can be thought of as the result of interplay between two-dimensional Z2 topological order and spontaneous symmetry breaking along the z ̂ direction. Fracton order is a novel type of topological order characterized by the presence of immobile pointlike excitations, named fractons, residing at the corners of an operator with two-dimensional support. As other recent fracton models, ours exhibits a subextensive ground-state degeneracy: On an Lx×Ly×Lz three-torus, it has a 22 Lz topological degeneracy and an additional symmetry-breaking nontopological degeneracy equal to 2LxLy-2. The fractons can be combined into composite excitations that move either in a straight line along the z ̂ direction or freely in the x y plane at a given height z . While our model draws inspiration from the toric code, we demonstrate that it cannot be adiabatically connected to a layered toric code construction. Additionally, we investigate the effects of imposing open boundary conditions on our system. We find zero energy modes on the surfaces perpendicular to either the x ̂ or y ̂ directions and their absence on the surfaces normal to z ̂. This result can be explained using the properties of the two kinds of composite two-fracton mobile excitations.

Dirac Fermions without bulk backscattering in rhombohedral topological insulators

NASA Astrophysics Data System (ADS)

Mera Acosta, Carlos; Lima, Matheus; Seixas, Leandro; da Silva, Antônio; Fazzio, Adalberto

2015-03-01

The realization of a spintronic device using topological insulators is not trivial, because there are inherent difficulties in achieving the surface transport regime. The majority of 3D topological insulators materials (3DTI) despite of support helical metallic surface states on an insulating bulk, forming topological Dirac fermions protected by the time-reversal symmetry, exhibit electronic scattering channels due to the presence of residual continuous bulk states near the Dirac-point. From ab initio calculations, we studied the microscopic origin of the continuous bulk states in rhombohedral topological insulators materials with the space group D3d 5 (R 3 m) , showing that it is possible to understand the emergence of residual continuous bulk states near the Dirac-point into a six bands effective model, where the breaking of the R3 symmetry beyond the Γ point has an important role in the hybridization of the px, py and pz atomic orbitals. Within these model, the mechanisms known to eliminate the bulk scattering, for instance: the stacking faults (SF), electric field and alloy, generated the similar effect in the effective states of the 3DTI. Finally, we show how the surface electronic transport is modified by perturbations of bulk with SF. We would like to thank the financial support by Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP).

Converting topological insulators into topological metals within the tetradymite family

NASA Astrophysics Data System (ADS)

Chen, K.-W.; Aryal, N.; Dai, J.; Graf, D.; Zhang, S.; Das, S.; Le Fèvre, P.; Bertran, F.; Yukawa, R.; Horiba, K.; Kumigashira, H.; Frantzeskakis, E.; Fortuna, F.; Balicas, L.; Santander-Syro, A. F.; Manousakis, E.; Baumbach, R. E.

2018-04-01

We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula T2C h2P n , obtained as a modification to the well-known topological insulator binaries Bi2(Se,Te ) 3 by replacing one chalcogen (C h ) with a pnictogen (P n ) and Bi with the tetravalent transition metals T = Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first-principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi2Se3 , where the surface Dirac bands are at the Γ point, for (Zr,Hf ) 2Te2 (P,As) there are Dirac cones of strong topological character around both the Γ ¯ and M ¯ points, which are above and below the Fermi energy, respectively. For Ti2Te2P , the surface state is predicted to exist only around the M ¯ point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle-resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).

Spin-Orbit Coupled Bose-Einstein Condensates

DTIC Science & Technology

2016-11-03

generalized the new concepts to interacting spin-1/2 bosons in optical lattices and described a superfluid-to-Mott insulator transition in spin-orbit...and quantum phase transitions in topological insulators , Physical Review B, (09 2010): 0. doi: 10.1103/PhysRevB.82.115125 Christopher Varney, Kai...109.235308 J. Radi?, A. Di Ciolo, K. Sun, V. Galitski. Exotic Quantum Spin Models in Spin-Orbit-Coupled Mott Insulators , Physical Review Letters

Strong correlation effects on surfaces of topological insulators via holography

NASA Astrophysics Data System (ADS)

Seo, Yunseok; Song, Geunho; Sin, Sang-Jin

2017-07-01

We investigate the effects of strong correlation on the surface state of a topological insulator (TI). We argue that electrons in the regime of crossover from weak antilocalization to weak localization are strongly correlated, and calculate the magnetotransport coefficients of TIs using the gauge-gravity principle. Then, we examine the magnetoconductivity (MC) formula and find excellent agreement with the data of chrome-doped Bi2Te3 in the crossover regime. We also find that the cusplike peak in MC at low doping is absent, which is natural since quasiparticles disappear due to the strong correlation.

Pressure effects on topological crystalline insulator SnTe and derived superconductor Sn{sub 0.5}In{sub 0.5}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurya, V. K.; Shruti,; Patnaik, S., E-mail: spatnaik@mail.jnu.ac.in

2016-05-23

We are reporting decrease in superconducting transition temperature accompanied by increased metallicity in indium doped SnTe superconductor. SnTe is a topological crystalline insulator and superconductivity is achieved by indium substitution in place of tin. With application of hydrostatic pressure we find negative dT{sub c}/dP of ~ -0.6K/GPa upto 2.5 GPa. The overall phenomenon is ascribed to unconventional superconductivity. Decrease in resistivity is also seen in single crystal SnTe with application of pressure but no evidence of superconductivity is observed.

Superconductivity induced by In substitution into the topological crystalline insulator Pb0.5Sn0.5Te

NASA Astrophysics Data System (ADS)

Zhong, R. D.; Schneeloch, J. A.; Liu, T. S.; Camino, F. E.; Tranquada, J. M.; Gu, G. D.

2014-07-01

Indium substitution turns the topological crystalline insulator (TCI) Pb0.5Sn0.5Te into a possible topological superconductor. To investigate the effect of the indium concentration on the crystal structure and superconducting properties of (Pb0.5Sn0.5)1-xInxTe, we have grown high-quality single crystals using a modified floating-zone method and have performed systematic studies for indium content in the range 0≤x≤0.35. We find that the single crystals retain the rocksalt structure up to the solubility limit of indium (x ˜0.30). Experimental dependencies of the superconducting transition temperature (Tc) and the upper critical magnetic field (Hc2) on the indium content x have been measured. The maximum Tc is determined to be 4.7 K at x =0.30, with μ0Hc2(T =0)≈5 T.

Charge-spin Transport in Surface-disordered Three-dimensional Topological Insulators

NASA Astrophysics Data System (ADS)

Peng, Xingyue

As one of the most promising candidates for the building block of the novel spintronic circuit, the topological insulator (TI) has attracted world-wide interest of study. Robust topological order protected by time-reversal symmetry (TRS) makes charge transport and spin generation in TIs significantly different from traditional three-dimensional (3D) or two-dimensional (2D) electronic systems. However, to date, charge transport and spin generation in 3D TIs are still primarily modeled as single-surface phenomena, happening independently on top and bottom surfaces. In this dissertation, I will demonstrate via both experimental findings and theoretical modeling that this "single surface'' theory neither correctly describes a realistic 3D TI-based device nor reveals the amazingly distinct physical picture of spin transport dynamics in 3D TIs. Instead, I present a new viewpoint of the spin transport dynamics where the role of the insulating yet topologically non-trivial bulk of a 3D TI becomes explicit. Within this new theory, many mysterious transport and magneto-transport anomalies can be naturally explained. The 3D TI system turns out to be more similar to its low dimensional sibling--2D TI rather than some other systems sharing the Dirac dispersion, such as graphene. This work not only provides valuable fundamental physical insights on charge-spin transport in 3D TIs, but also offers important guidance to the design of 3D TI-based spintronic devices.

Observation of Dirac-like energy band and ring-torus Fermi surface associated with the nodal line in topological insulator CaAgAs

NASA Astrophysics Data System (ADS)

Takane, Daichi; Nakayama, Kosuke; Souma, Seigo; Wada, Taichi; Okamoto, Yoshihiko; Takenaka, Koshi; Yamakawa, Youichi; Yamakage, Ai; Mitsuhashi, Taichi; Horiba, Koji; Kumigashira, Hiroshi; Takahashi, Takashi; Sato, Takafumi

2018-01-01

One of key challenges in current material research is to search for new topological materials with inverted bulk-band structure. In topological insulators, the band inversion caused by strong spin-orbit coupling leads to opening of a band gap in the entire Brillouin zone, whereas an additional crystal symmetry such as point-group and nonsymmorphic symmetries sometimes prohibits the gap opening at/on specific points or line in momentum space, giving rise to topological semimetals. Despite many theoretical predictions of topological insulators/semimetals associated with such crystal symmetries, the experimental realization is still relatively scarce. Here, using angle-resolved photoemission spectroscopy with bulk-sensitive soft-x-ray photons, we experimentally demonstrate that hexagonal pnictide CaAgAs belongs to a new family of topological insulators characterized by the inverted band structure and the mirror reflection symmetry of crystal. We have established the bulk valence-band structure in three-dimensional Brillouin zone, and observed the Dirac-like energy band and ring-torus Fermi surface associated with the line node, where bulk valence and conducting bands cross on a line in the momentum space under negligible spin-orbit coupling. Intriguingly, we found that no other bands cross the Fermi level and therefore the low-energy excitations are solely characterized by the Dirac-like band. CaAgAs provides an excellent platform to study the interplay among low-energy electron dynamics, crystal symmetry, and exotic topological properties.

Quadratic Fermi node in a 3D strongly correlated semimetal

PubMed Central

Kondo, Takeshi; Nakayama, M.; Chen, R.; Ishikawa, J. J.; Moon, E.-G.; Yamamoto, T.; Ota, Y.; Malaeb, W.; Kanai, H.; Nakashima, Y.; Ishida, Y.; Yoshida, R.; Yamamoto, H.; Matsunami, M.; Kimura, S.; Inami, N.; Ono, K.; Kumigashira, H.; Nakatsuji, S.; Balents, L.; Shin, S.

2015-01-01

Strong spin–orbit coupling fosters exotic electronic states such as topological insulators and superconductors, but the combination of strong spin–orbit and strong electron–electron interactions is just beginning to be understood. Central to this emerging area are the 5d transition metal iridium oxides. Here, in the pyrochlore iridate Pr2Ir2O7, we identify a non-trivial state with a single-point Fermi node protected by cubic and time-reversal symmetries, using a combination of angle-resolved photoemission spectroscopy and first-principles calculations. Owing to its quadratic dispersion, the unique coincidence of four degenerate states at the Fermi energy, and strong Coulomb interactions, non-Fermi liquid behaviour is predicted, for which we observe some evidence. Our discovery implies that Pr2Ir2O7 is a parent state that can be manipulated to produce other strongly correlated topological phases, such as topological Mott insulator, Weyl semimetal, and quantum spin and anomalous Hall states. PMID:26640114

Quadratic Fermi node in a 3D strongly correlated semimetal

DOE PAGES

Kondo, Takeshi; Nakayama, M.; Chen, R.; ...

2015-12-07

We report that strong spin–orbit coupling fosters exotic electronic states such as topological insulators and superconductors, but the combination of strong spin–orbit and strong electron–electron interactions is just beginning to be understood. Central to this emerging area are the 5d transition metal iridium oxides. Here, in the pyrochlore iridate Pr 2Ir 2O 7, we identify a non-trivial state with a single-point Fermi node protected by cubic and time-reversal symmetries, using a combination of angle-resolved photoemission spectroscopy and first-principles calculations. Owing to its quadratic dispersion, the unique coincidence of four degenerate states at the Fermi energy, and strong Coulomb interactions, non-Fermimore » liquid behaviour is predicted, for which we observe some evidence. Lastly, our discovery implies that Pr 2Ir 2O 7 is a parent state that can be manipulated to produce other strongly correlated topological phases, such as topological Mott insulator, Weyl semimetal, and quantum spin and anomalous Hall states.« less

Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe5

PubMed Central

Zhang, Yan; Wang, Chenlu; Yu, Li; Liu, Guodong; Liang, Aiji; Huang, Jianwei; Nie, Simin; Sun, Xuan; Zhang, Yuxiao; Shen, Bing; Liu, Jing; Weng, Hongming; Zhao, Lingxiao; Chen, Genfu; Jia, Xiaowen; Hu, Cheng; Ding, Ying; Zhao, Wenjuan; Gao, Qiang; Li, Cong; He, Shaolong; Zhao, Lin; Zhang, Fengfeng; Zhang, Shenjin; Yang, Feng; Wang, Zhimin; Peng, Qinjun; Dai, Xi; Fang, Zhong; Xu, Zuyan; Chen, Chuangtian; Zhou, X. J.

2017-01-01

The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced. PMID:28534501

Using gapped topological surface states of Bi 2Se 3 films in a field effect transistor

DOE PAGES

Sun, Jifeng; Singh, David J.

2017-02-08

Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi 2Se 3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible tomore » use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.« less

Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

2017-05-01

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

Magneto-photoconductivity of three dimensional topological insulator bismuth telluride

NASA Astrophysics Data System (ADS)

Cao, Bingchen; Eginligil, Mustafa; Yu, Ting

2018-03-01

Magnetic field dependence of the photocurrent in a 3D topological insulator is studied. Among the 3D topological insulators bismuth telluride has unique hexagonal warping and spin texture which has been studied by photoemission, scanning tunnelling microscopy and transport. Here, we report on low temperature magneto-photoconductivity, up to 7 T, of two metallic bismuth telluride topological insulator samples with 68 and 110 nm thicknesses excited by 2.33 eV photon energy along the magnetic field perpendicular to the sample plane. At 4 K, both samples exhibit negative magneto-photoconductance below 4 T, which is as a result of weak-antilocalization of Dirac fermions similar to the previous observations in electrical transport. However the thinner sample shows positive magneto-photoconductance above 4 T. This can be attributed to the coupling of surface states. On the other hand, the thicker sample shows no positive magneto-photoconductance up to 7 T since there is only one surface state at play. By fitting the magneto-photoconductivity data of the thicker sample to the localization formula, we obtain weak antilocalization behaviour at 4, 10, and 20 K, as expected; however, weak localization behaviour at 30 K, which is a sign of surface states masked by bulk states. Also, from the temperature dependence of phase coherence length bulk carrier-carrier interaction is identified separately from the surface states. Therefore, it is possible to distinguish surface states by magneto-photoconductivity at low temperature, even in metallic samples.

Convergence of topological domain boundaries, insulators, and polytene interbands revealed by high-resolution mapping of chromatin contacts in the early Drosophila melanogaster embryo

PubMed Central

Stadler, Michael R; Haines, Jenna E

2017-01-01

High-throughput assays of three-dimensional interactions of chromosomes have shed considerable light on the structure of animal chromatin. Despite this progress, the precise physical nature of observed structures and the forces that govern their establishment remain poorly understood. Here we present high resolution Hi-C data from early Drosophila embryos. We demonstrate that boundaries between topological domains of various sizes map to DNA elements that resemble classical insulator elements: short genomic regions sensitive to DNase digestion that are strongly bound by known insulator proteins and are frequently located between divergent promoters. Further, we show a striking correspondence between these elements and the locations of mapped polytene interband regions. We believe it is likely this relationship between insulators, topological boundaries, and polytene interbands extends across the genome, and we therefore propose a model in which decompaction of boundary-insulator-interband regions drives the organization of interphase chromosomes by creating stable physical separation between adjacent domains. PMID:29148971

Interface induced ferromagnetism in topological insulator above room temperature

NASA Astrophysics Data System (ADS)

Tang, Chi; Chang, Cui-Zu; Liu, Yawen; Chen, Tingyong; Moodera, Jagadeesh; Shi, Jing

The quantum anomalous Hall effect (QAHE) observed in magnetic topological insulators (TI), an outcome of time reversal symmetry broken surface states, exhibits many exotic properties. However, a major obstacle towards high temperature QAHE is the low Curie temperature in the disordered magnetically doped TI systems. Here we report a study on heterostructures of TI and magnetic insulator in which the magnetic insulator, namely thulium iron garnet or TIG, has perpendicular magnetic anisotropy. At the TIG/TI interface, TIG magnetizes the surface states of the TI film by exchange coupling, as revealed by the anomalous Hall effect (AHE). We demonstrate that squared AHE hysteresis loops persist well above room temperature. The interface proximity induced high-temperature ferromagnetism in topological insulators opens up new possibilities for the realization of QAHE at high temperatures. This work was supported as part of the SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # SC0012670.

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Nashchekina, O. N.; Meriuts, A. V.; Dresselhaus, M. S.

2017-07-01

Bi2Te3 compound and Bi2Te3-based solid solutions have attracted much attention as promising thermoelectric materials for refrigerating devices. The possibility of enhancing the thermoelectric efficiency in low-dimensional structures has stimulated studies of Bi2Te3 thin films. Now, interest in studying the transport properties of Bi2Te3 has grown sharply due to the observation of special properties characteristic of three-dimensional (3D) topological insulators in Bi2Te3. One of the possible manifestations of quantum size effects in two-dimensional structures is an oscillatory behavior of the dependences of transport properties on film thickness, d. The goal of this work is to summarize our earlier experimental results on the d-dependences of transport properties of Bi2Te3 thin films obtained by thermal evaporation in a vacuum on glass substrates, and to present our new results of theoretical calculations of the oscillations periods within the framework of the model of an infinitely deep potential well, which takes into account the dependence of the Fermi energy on d and the contribution of all energy subbands below the Fermi level to the conductivity. On the basis of the data obtained, some general regularities and specificity of the quantum size effects manifestation in 3D topological insulators are established.

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Fano q-reversal in topological insulator Bi 2Se 3

DOE PAGES

S. V. Dordevic; Petrovic, C.; Foster, G. M.; ...

2016-03-22

Here, we studied the magneto-optical response of a canonical topological insulator Bi 2Se 3 with the goal of addressing a controversial issue of electron–phonon coupling. Magnetic-field induced modifications of reflectance are very pronounced in the infrared part of the spectrum, indicating strong electron–phonon coupling. This coupling causes an asymmetric line-shape of the 60 cm –1 phonon mode, and is analyzed within the Fano formalism. The analysis reveals that the Fano asymmetry parameter ( q) changes sign when the cyclotron resonance is degenerate with the phonon mode. To the best of our knowledge this is the first example of magnetic fieldmore » driven q-reversal.« less

Experimental Realization of a Reflections-Free Compact Delay Line Based on a Photonic Topological Insulator

PubMed Central

Lai, Kueifu; Ma, Tsuhsuang; Bo, Xiao; Anlage, Steven; Shvets, Gennady

2016-01-01

Electromagnetic (EM) waves propagating through an inhomogeneous medium are generally scattered whenever the medium’s electromagnetic properties change on the scale of a single wavelength. This fundamental phenomenon constrains how optical structures are designed and interfaced with each other. Recent theoretical work indicates that electromagnetic structures collectively known as photonic topological insulators (PTIs) can be employed to overcome this fundamental limitation, thereby paving the way for ultra-compact photonic structures that no longer have to be wavelength-scale smooth. Here we present the first experimental demonstration of a photonic delay line based on topologically protected surface electromagnetic waves (TPSWs) between two PTIs which are the EM counterparts of the quantum spin-Hall topological insulators in condensed matter. Unlike conventional guided EM waves that do not benefit from topological protection, TPSWs are shown to experience multi-wavelength reflection-free time delays when detoured around sharply-curved paths, thus offering a unique paradigm for compact and efficient wave buffers and other devices. PMID:27345575

Floquet Topological Insulators in Uranium Compounds

NASA Astrophysics Data System (ADS)

Pi, Shu-Ting; Savrasov, Sergey

2014-03-01

A major issue regarding the Uranium based nuclear fuels is to conduct the heat from the core area to its outer area. Unfortunately, those materials are notorious for their extremely low thermal conductivity due to the phonon-dominated-heat-transport properties in insulating states. Although metallic Uranium compounds are helpful in increasing the thermal conductivity, their low melting point still make those efforts in vain. In this report, we will figure out potential Uranium based Floquet topological insulators where the insulating bulk states accompanied with metallic surface states is achieved by applying periodic electrical fields which makes the coexistence of both benefits possible.

Continuum theory of edge states of topological insulators: variational principle and boundary conditions.

PubMed

Medhi, Amal; Shenoy, Vijay B

2012-09-05

We develop a continuum theory to model low energy excitations of a generic four-band time reversal invariant electronic system with boundaries. We propose a variational energy functional for the wavefunctions which allows us to derive natural boundary conditions valid for such systems. Our formulation is particularly suited for developing a continuum theory of the protected edge/surface excitations of topological insulators both in two and three dimensions. By a detailed comparison of our analytical formulation with tight binding calculations of ribbons of topological insulators modelled by the Bernevig-Hughes-Zhang (BHZ) Hamiltonian, we show that the continuum theory with a natural boundary condition provides an appropriate description of the low energy physics.

Dirac spin-orbit torques and charge pumping at the surface of topological insulators

NASA Astrophysics Data System (ADS)

Ndiaye, Papa B.; Akosa, C. A.; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, A.

2017-07-01

We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

Specular Andreev reflection in thin films of topological insulators

NASA Astrophysics Data System (ADS)

Majidi, Leyla; Asgari, Reza

2016-05-01

We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

Magnetoconductance signatures of chiral domain-wall bound states in magnetic topological insulators

NASA Astrophysics Data System (ADS)

Tiwari, Kunal L.; Coish, W. A.; Pereg-Barnea, T.

2017-12-01

Recent magnetoconductance measurements performed on magnetic topological insulator candidates have revealed butterfly-shaped hysteresis. This hysteresis has been attributed to the formation of gapless chiral domain-wall bound states during a magnetic-field sweep. We treat this phenomenon theoretically, providing a link between microscopic magnetization dynamics and butterfly hysteresis in magnetoconductance. Further, we illustrate how a spatially resolved conductance measurement can probe the most striking feature of the domain-wall bound states: their chirality. This work establishes a regime where a definitive link between butterfly hysteresis in longitudinal magneto-conductance and domain-wall bound states can be made. This analysis provides an important tool for the identification of magnetic topological insulators.

Tunable triple-wavelength mode-locked fiber laser with topological insulator Bi2Se3 solution

NASA Astrophysics Data System (ADS)

Guo, Bo; Yao, Yong

2016-08-01

We experimentally demonstrated a tunable triple-wavelength mode-locked erbium-doped fiber laser with few-layer topological insulator: Bi2Se3/polyvinyl alcohol solution. By properly adjusting the pump power and the polarization state, the single-, dual-, and triple-wavelength mode-locking operation could be stably initiated with a wavelength-tunable range (˜1 nm) and a variable wavelength spacing (1.7 or 2 nm). Meanwhile, it exhibits the maximum output power of 10 mW and pulse energy of 1.12 nJ at the pump power of 175 mW. The simple, low-cost triple-wavelength mode-locked fiber laser might be applied in various potential fields, such as optical communication, biomedical research, and sensing system.

Superconductivity in strong spin orbital coupling compound Sb 2Se 3

DOE PAGES

Kong, P. P.; Sun, F.; Xing, L. Y.; ...

2014-10-20

Recently, A 2B 3 type strong spin orbital coupling compounds such as Bi 2Te 3, Bi 2Se 3 and Sb 2Te 3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb 2Se 3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb 2Se 3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb 2Se 3 single crystal induced via pressure. Our experiments indicated that Sb 2Se 3 became superconductive at high pressures above 10 GPa proceeded bymore » a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (T C) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of T C slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

Superconducting and normal-state anisotropy of the doped topological insulator Sr 0.1Bi 2Se 3

DOE PAGES

Smylie, M. P.; Willa, K.; Claus, H.; ...

2018-05-16

Sr xBi 2Se 3 and the related compounds Cu xBi 2Se 3 and Nb xBi 2Se 3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T c ~3 K in Sr xBi 2Se 3 arises upon intercalation of Sr into the layered topological insulator Bi 2Se 3. Here we elucidate the anisotropy of the normal and superconducting state of Sr 0.1Bi 2Se 3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magneticmore » properties of Sr 0.1Bi 2Se 3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. In conclusion, our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in Sr xBi 2Se 3.« less

Superconducting and normal-state anisotropy of the doped topological insulator Sr 0.1Bi 2Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Willa, K.; Claus, H.

Sr xBi 2Se 3 and the related compounds Cu xBi 2Se 3 and Nb xBi 2Se 3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T c ~3 K in Sr xBi 2Se 3 arises upon intercalation of Sr into the layered topological insulator Bi 2Se 3. Here we elucidate the anisotropy of the normal and superconducting state of Sr 0.1Bi 2Se 3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magneticmore » properties of Sr 0.1Bi 2Se 3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. In conclusion, our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in Sr xBi 2Se 3.« less

Superconducting and normal-state anisotropy of the doped topological insulator Sr0.1Bi2Se3.

PubMed

Smylie, M P; Willa, K; Claus, H; Koshelev, A E; Song, K W; Kwok, W-K; Islam, Z; Gu, G D; Schneeloch, J A; Zhong, R D; Welp, U

2018-05-16

Sr x Bi 2 Se 3 and the related compounds Cu x Bi 2 Se 3 and Nb x Bi 2 Se 3 have attracted considerable interest, as these materials may be realizations of unconventional topological superconductors. Superconductivity with T c  ~3 K in Sr x Bi 2 Se 3 arises upon intercalation of Sr into the layered topological insulator Bi 2 Se 3 . Here we elucidate the anisotropy of the normal and superconducting state of Sr 0.1 Bi 2 Se 3 with angular dependent magnetotransport and thermodynamic measurements. High resolution x-ray diffraction studies underline the high crystalline quality of the samples. We demonstrate that the normal state electronic and magnetic properties of Sr 0.1 Bi 2 Se 3 are isotropic in the basal plane while we observe a large two-fold in-plane anisotropy of the upper critical field in the superconducting state. Our results support the recently proposed odd-parity nematic state characterized by a nodal gap of Eu symmetry in Sr x Bi 2 Se 3 .

Quantum Spin Liquids and Fractionalization

NASA Astrophysics Data System (ADS)

Misguich, Grégoire

This chapter discusses quantum antiferromagnets which do not break any symmetries at zero temperature - also called "spin liquids" - and focuses on lattice spin models with Heisenberg-like (i.e. SU(2)-symmetric) interactions in dimensions larger than one. We begin by discussing the Lieb-Schultz-Mattis theorem and its recent extension to D > 1 by Hastings (2004), which establishes an important distinction between spin liquids with an integer and with a half-integer spin per unit cell. Spin liquids of the first kind, "band insulators", can often be understood by elementary means, whereas the latter, "Mott insulators", are more complex (featuring "topological order") and support spin-1/2 excitations (spinons). The fermionic formalism (Affleck and Marston, 1988) is described and the effect of fluctuations about mean-field solutions, such as the possible creation of instabilities, is discussed in a qualitative way. In particular, we explain the emergence of gauge modes and their relation to fractionalization. The concept of the projective symmetry group (X.-G. Wen, 2002) is introduced, with the aid of some examples. Finally, we present the phenomenology of (gapped) short-ranged resonating-valence-bond spin liquids, and make contact with the fermionic approach by discussing their description in terms of a fluctuating Z 2 gauge field. Some recent references are given to other types of spin liquid, including gapless ones.

Mode-locked Er-doped fiber laser based on liquid phase exfoliated Sb2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Boguslawski, J.; Sotor, J.; Sobon, G.; Tarka, J.; Jagiello, J.; Macherzynski, W.; Lipinska, L.; Abramski, K. M.

2014-10-01

In this paper, femtosecond pulse generation in an Er-doped fiber laser is reported. The laser is passively mode-locked by an antimony telluride (Sb2Te3) topological insulator (TI) saturable absorber (SA) placed on a side-polished fiber. The Sb2Te3/chitosan suspension used to prepare the SA was obtained via liquid phase exfoliation from bulk Sb2Te3.Ultra-short 449 fs soliton pulses were generated due to the interaction between the evanescent field propagated in the fiber cladding and the Sb2Te3 layers. The optical spectrum is centered at 1556 nm with 6 nm of full-width at half maximum bandwidth. The presented method benefits from a much better repeatability compared to mechanical exfoliation.

High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

PubMed

Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

2015-11-20

We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

Correlated spin currents generated by resonant-crossed Andreev reflections in topological superconductors

PubMed Central

He, James J.; Wu, Jiansheng; Choy, Ting-Pong; Liu, Xiong-Jun; Tanaka, Y.; Law, K. T.

2014-01-01

Topological superconductors, which support Majorana fermion excitations, have been the subject of intense studies due to their novel transport properties and their potential applications in fault-tolerant quantum computations. Here we propose a new type of topological superconductors that can be used as a novel source of correlated spin currents. We show that inducing superconductivity on a AIII class topological insulator wire, which respects a chiral symmetry and supports protected fermionic end states, will result in a topological superconductor. This topological superconductor supports two topological phases with one or two Majorana fermion end states, respectively. In the phase with two Majorana fermions, the superconductor can split Cooper pairs efficiently into electrons in two spatially separated leads due to Majorana-induced resonant-crossed Andreev reflections. The resulting currents in the leads are correlated and spin-polarized. Importantly, the proposed topological superconductors can be realized using quantum anomalous Hall insulators in proximity to superconductors. PMID:24492649

The Role Of Painleve II In Predicting New Liquid Crystal Self-Assembly Mechanisms

NASA Astrophysics Data System (ADS)

Troy, William C.

2018-01-01

We prove the existence of a new class of solutions, called shadow kinks, of the Painleve II equation {d2 w}/{dz2}=2w3 +zw+α,} where {α < 0} is a constant. Shadow kinks are sign changing solutions which satisfy { w(z) ˜ -{√ {-z/2}} as z \\to - ∞} and w(z) ˜ -{α}/{z} as z \\to ∞. These solutions play a critical role in the prediction of a new class of topological defects, one dimensional shadow kinks and two dimensional shadow vortices, in light-matter interaction experiments on nematic liquid crystals. These new defects are physically important since it has recently been shown ( Wang et al. in Nat Mater 15:106-112, 2016) that topological defects are a "template for molecular self-assembly" in liquid crystals. Connections with the modified KdV equation are also discussed.

Weakly-coupled quasi-1D helical modes in disordered 3D topological insulator quantum wires

NASA Astrophysics Data System (ADS)

Dufouleur, J.; Veyrat, L.; Dassonneville, B.; Xypakis, E.; Bardarson, J. H.; Nowka, C.; Hampel, S.; Schumann, J.; Eichler, B.; Schmidt, O. G.; Büchner, B.; Giraud, R.

2017-04-01

Disorder remains a key limitation in the search for robust signatures of topological superconductivity in condensed matter. Whereas clean semiconducting quantum wires gave promising results discussed in terms of Majorana bound states, disorder makes the interpretation more complex. Quantum wires of 3D topological insulators offer a serious alternative due to their perfectly-transmitted mode. An important aspect to consider is the mixing of quasi-1D surface modes due to the strong degree of disorder typical for such materials. Here, we reveal that the energy broadening γ of such modes is much smaller than their energy spacing Δ, an unusual result for highly-disordered mesoscopic nanostructures. This is evidenced by non-universal conductance fluctuations in highly-doped and disordered Bi2Se3 and Bi2Te3 nanowires. Theory shows that such a unique behavior is specific to spin-helical Dirac fermions with strong quantum confinement, which retain ballistic properties over an unusually large energy scale due to their spin texture. Our result confirms their potential to investigate topological superconductivity without ambiguity despite strong disorder.

Weakly-coupled quasi-1D helical modes in disordered 3D topological insulator quantum wires

PubMed Central

Dufouleur, J.; Veyrat, L.; Dassonneville, B.; Xypakis, E.; Bardarson, J. H.; Nowka, C.; Hampel, S.; Schumann, J.; Eichler, B.; Schmidt, O. G.; Büchner, B.; Giraud, R.

2017-01-01

Disorder remains a key limitation in the search for robust signatures of topological superconductivity in condensed matter. Whereas clean semiconducting quantum wires gave promising results discussed in terms of Majorana bound states, disorder makes the interpretation more complex. Quantum wires of 3D topological insulators offer a serious alternative due to their perfectly-transmitted mode. An important aspect to consider is the mixing of quasi-1D surface modes due to the strong degree of disorder typical for such materials. Here, we reveal that the energy broadening γ of such modes is much smaller than their energy spacing Δ, an unusual result for highly-disordered mesoscopic nanostructures. This is evidenced by non-universal conductance fluctuations in highly-doped and disordered Bi2Se3 and Bi2Te3 nanowires. Theory shows that such a unique behavior is specific to spin-helical Dirac fermions with strong quantum confinement, which retain ballistic properties over an unusually large energy scale due to their spin texture. Our result confirms their potential to investigate topological superconductivity without ambiguity despite strong disorder. PMID:28374744

Weakly-coupled quasi-1D helical modes in disordered 3D topological insulator quantum wires.

PubMed

Dufouleur, J; Veyrat, L; Dassonneville, B; Xypakis, E; Bardarson, J H; Nowka, C; Hampel, S; Schumann, J; Eichler, B; Schmidt, O G; Büchner, B; Giraud, R

2017-04-04

Disorder remains a key limitation in the search for robust signatures of topological superconductivity in condensed matter. Whereas clean semiconducting quantum wires gave promising results discussed in terms of Majorana bound states, disorder makes the interpretation more complex. Quantum wires of 3D topological insulators offer a serious alternative due to their perfectly-transmitted mode. An important aspect to consider is the mixing of quasi-1D surface modes due to the strong degree of disorder typical for such materials. Here, we reveal that the energy broadening γ of such modes is much smaller than their energy spacing Δ, an unusual result for highly-disordered mesoscopic nanostructures. This is evidenced by non-universal conductance fluctuations in highly-doped and disordered Bi2Se3 and Bi 2 Te 3 nanowires. Theory shows that such a unique behavior is specific to spin-helical Dirac fermions with strong quantum confinement, which retain ballistic properties over an unusually large energy scale due to their spin texture. Our result confirms their potential to investigate topological superconductivity without ambiguity despite strong disorder.

Topological Sachdev-Ye-Kitaev model

NASA Astrophysics Data System (ADS)

Zhang, Pengfei; Zhai, Hui

2018-05-01

In this Rapid Communication, we construct a large-N exactly solvable model to study the interplay between interaction and topology, by connecting the Sachdev-Ye-Kitaev (SYK) model with constant hopping. The hopping forms a band structure that can exhibit both topologically trivial and nontrivial phases. Starting from a topologically trivial insulator with zero Hall conductance, we show that the interaction can drive a phase transition to a topologically nontrivial insulator with quantized nonzero Hall conductance, and a single gapless Dirac fermion emerges when the interaction is fine tuned to the critical point. The finite temperature effect is also considered, and we show that the topological phase with a stronger interaction is less stable against temperature. Our model provides a concrete example to illustrate the interacting topological phases and phase transitions, and can shed light on similar problems in physical systems.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure

NASA Astrophysics Data System (ADS)

Łepkowski, S. P.; Bardyszewski, W.

2017-02-01

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure.

PubMed

Łepkowski, S P; Bardyszewski, W

2017-02-08

Combining the k · p method with the third-order elasticity theory, we perform a theoretical study of the pressure-induced topological phase transition and the pressure evolution of topologically protected edge states in InN/GaN and In-rich InGaN/GaN quantum wells. We show that for a certain range of the quantum well parameters, thanks to a negative band gap pressure coefficient, it is possible to continuously drive the system from the normal insulator state through the topological insulator into the semimetal phase. The critical pressure for the topological phase transition depends not only on the quantum well thickness but also on the width of the Hall bar, which determines the coupling between the edge states localized at the opposite edges. We also find that in narrow Hall bar structures, near the topological phase transition, a significant Rashba-type spin splitting of the lower and upper branches of the edge state dispersion curve appears. This effect originates from the lack of the mirror symmetry of the quantum well potential caused by the built-in electric field, and can be suppressed by increasing the Hall bar width. When the pressure increases, the energy dispersion of the edge states becomes more parabolic-like and the spin splitting decreases. A further increase of pressure leads to the transition to a semimetal phase, which occurs due to the closure of the indirect 2D bulk band gap. The difference between the critical pressure at which the system becomes semimetallic, and the pressure for the topological phase transition, correlates with the variation of the pressure coefficient of the band gap in the normal insulator state.

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Klimeck, Gerhard

2015-01-01

Bi2Te3 and Bi2Se3 are well known 3D-topological insulators (TI). Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as building blocks for a variety of applications that involve tuning their dispersion relationship and opening a band gap. A band gap can be opened either by breaking time reversal symmetry, the proximity effect of a superconductor or ferromagnet or adjusting the dimensionality of the TI material. In this work, methods that can be employed to easily open a band gap for the TI surface states are assessed. Two approaches are described: (1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. (2) An s-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. Finally, the hybridization of the surface Dirac cones can be controlled by reducing the thickness of the topological insulator film. It is shown that this alters the band gap significantly.

Quantum spin Hall state in monolayer 1T '-WTe 2

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; ...

2017-06-26

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T '-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulkmore » bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T '-WTe 2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).« less

Quantum spin Hall state in monolayer 1T '-WTe 2

DOE PAGES

Tang, Shujie; Zhang, Chaofan; Wong, Dillon; ...

2017-06-26

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of a magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin–orbit coupling. By investigating the electronic structure of epitaxially grown monolayer 1T '-WTe 2 using angle-resolved photoemission (ARPES) and first-principles calculations, we observe clear signatures of topological band inversion and bandgap opening, which are the hallmarks of a QSH state. Scanning tunnelling microscopy measurements further confirm the correct crystal structure and the existence of a bulkmore » bandgap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Finally, our results establish monolayer 1T '-WTe 2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).« less

Distinctive features of transport in topological insulators

NASA Astrophysics Data System (ADS)

Sacksteder, Vincent; Wu, Quansheng; Arnardottir, Kristin; Shelykh, Ivan; Kettemann, Stefan

2015-03-01

The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected against disorder. Its signatures are (1) a conductance plateau in long wires and (2) a conductivity which always increases with sample size. We numerically show that the bulk substantially accelerates the conductance plateaus's decay in a magnetic field. It also reduces the effects of surface disorder and causes the magnitude of the surface conductivity and the magnetoconductivity to depend systematically on sample details such as doping and disorder strength. In addition, we predict a new signature of the topological state: at low temperatures the magnetoresistance will deviate strongly from the Hikami-Larkin-Nagaoka (HLN) formula. In this regime the magnetoresistance is dominated by scattering processes which wrap around the TI sample. The HLN formula's shoulder is replaced by a feature with a larger critical field magnetic strength that is caused by wrapping. Inside the wrapping regime the magnetoconductance will lose its dependence on temperature. This new topological signature should be visible in the same samples and temperatures where the Altshuler-Aronov-Spivak (AAS) effect has already been observed.

On the influence of tetrahedral covalent-hybridization on electronic band structure of topological insulators from first principles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, X. M.; Xu, G. Z.; Liu, E. K.

Based on first-principles calculations, we investigate the influence of tetrahedral covalent-hybridization between main-group and transition-metal atoms on the topological band structures of binary HgTe and ternary half-Heusler compounds, respectively. Results show that, for the binary HgTe, when its zinc-blend structure is artificially changed to rock-salt one, the tetrahedral covalent-hybridization will be removed and correspondingly the topologically insulating band character lost. While for the ternary half-Heusler system, the strength of covalent-hybridization can be tuned by varying both chemical compositions and atomic arrangements, and the competition between tetrahedral and octahedral covalent-hybridization has been discussed in details. As a result, we found thatmore » a proper strength of tetrahedral covalent-hybridization is probably in favor to realizing the topologically insulating state with band inversion occurring at the Γ point of the Brillouin zone.« less

Emergence of topological semimetals in gap closing in semiconductors without inversion symmetry.

PubMed

Murakami, Shuichi; Hirayama, Motoaki; Okugawa, Ryo; Miyake, Takashi

2017-05-01

A band gap for electronic states in crystals governs various properties of solids, such as transport, optical, and magnetic properties. Its estimation and control have been an important issue in solid-state physics. The band gap can be controlled externally by various parameters, such as pressure, atomic compositions, and external field. Sometimes, the gap even collapses by tuning some parameter. In the field of topological insulators, this closing of the gap at a time-reversal invariant momentum indicates a band inversion, that is, it leads to a topological phase transition from a normal insulator to a topological insulator. We show, through an exhaustive study on possible space groups, that the gap closing in inversion-asymmetric crystals is universal, in the sense that the gap closing always leads either to a Weyl semimetal or to a nodal-line semimetal. We consider three-dimensional spinful systems with time-reversal symmetry. The space group of the system and the wave vector at the gap closing uniquely determine which possibility occurs and where the gap-closing points or lines lie in the wave vector space after the closing of the gap. In particular, we show that an insulator-to-insulator transition never happens, which is in sharp contrast to inversion-symmetric systems.

Rényi-Fisher entropy product as a marker of topological phase transitions

NASA Astrophysics Data System (ADS)

Bolívar, J. C.; Nagy, Ágnes; Romera, Elvira

2018-05-01

The combined Rényi-Fisher entropy product of electrons plus holes displays a minimum at the charge neutrality points. The Stam-Rényi difference and the Stam-Rényi uncertainty product of the electrons plus holes, show maxima at the charge neutrality points. Topological quantum numbers capable of detecting the topological insulator and the band insulator phases, are defined. Upper and lower bounds for the position and momentum space Rényi-Fisher entropy products are derived.

Observation of antiphase coherent phonons in the warped Dirac cone of Bi2Te3

NASA Astrophysics Data System (ADS)

Golias, E.; Sánchez-Barriga, J.

2016-10-01

In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi2Te3 . Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A1 g coherent-phonon mode in Bi2Te3 . We observe an antiphase behavior in the onset of the coherent-phonon oscillations between the Γ K ¯ and the Γ M ¯ high-symmetry directions that is consistent with warping. The qualitative agreement between our density-functional theory calculations and the experimental results reveals the critical role of the anisotropic coupling between Dirac fermions and phonon modes in the topological insulator Bi2Te3 .

Geometry, topology, and response in condensed matter systems

NASA Astrophysics Data System (ADS)

Varjas, Daniel

Topological order provides a new paradigm to view phases of matter. Unlike conventional symmetry breaking order, these states are not distinguished by different patterns of symmetry breaking, instead by their intricate mathematical structure, topology. By the bulk-boundary correspondence, the nontrivial topology of the bulk results in robust gapless excitations on symmetry preserving surfaces. We utilize both of these views to study topological phases together with the analysis of their quantized physical responses to perturbations. First we study the edge excitations of strongly interacting abelian fractional quantum Hall liquids on an infinite strip geometry. We use the infinite density matrix renormalization group method to numerically measure edge exponents in model systems, including subleading orders. Using analytic methods we derive a generalized Luttinger's theorem that relates momenta of edge excitations. Next we consider topological crystalline insulators protected by space group symmetry. After reviewing the general formalism, we present results about the quantization of the magnetoelectric response protected by orientation-reversing space group symmetries. We construct and analyze insulating and superconducting tight-binding models with glide symmetry in three dimensions to illustrate the general result. Following this, we derive constraints on weak indices of three dimensional topological insulators imposed by space group symmetries. We focus on spin-orbit coupled insulators with and without time reversal invariance and consider both symmorphic and nonsymmorphic symmetries. Finally, we calculate the response of metals and generalize the notion of the magnetoelectric effect to noninteracting gapless systems. We use semiclassical dynamics to study the magnetopiezoelectric effect, the current response to elastic strain in static external magnetic fields.

Making connections: Insulators organize eukaryotic chromosomes into independent cis-regulatory networks

PubMed Central

Chetverina, Darya; Aoki, Tsutomu; Erokhin, Maksim; Georgiev, Pavel; Schedl, Paul

2015-01-01

Summary Insulators play a central role in subdividing the chromosome into a series of discrete topologically independent domains and in ensuring that enhancers and silencers contact their appropriate target genes. In this review we first discuss the general characteristics of insulator elements and their associated protein factors. A growing collection of insulator proteins have been identified including a family of proteins whose expression is developmental regulator. We next consider several unexpected discoveries that require us to completely rethink both how insulators function (and how they can best be assayed). These discoveries also require a reevaluation of how insulators might restrict or orchestrate (by preventing or promoting) interactions between regulatory elements and their target genes. We conclude by connecting these new insights into the mechanisms of insulator action to dynamic changes in the 3-dimensional topology of the chromatin fiber and the generation of specific patterns of gene activity during development and differentiation. PMID:24277632

Surface charge conductivity of a topological insulator in a magnetic field: The effect of hexagonal warping

NASA Astrophysics Data System (ADS)

Akzyanov, R. S.; Rakhmanov, A. L.

2018-02-01

We investigate the influence of hexagonal warping on the transport properties of topological insulators. We study the charge conductivity within Kubo formalism in the first Born approximation using low-energy expansion of the Hamiltonian near the Dirac point. The effects of disorder, magnetic field, and chemical-potential value are analyzed in detail. We find that the presence of hexagonal warping significantly affects the conductivity of the topological insulator. In particular, it gives rise to the growth of the longitudinal conductivity with the increase of the disorder and anisotropic anomalous in-plane magnetoresistance. Hexagonal warping also affects the quantum anomalous Hall effect and anomalous out-of-plane magnetoresistance. The obtained results are consistent with the experimental data.

Zero-bias photocurrent in ferromagnetic topological insulator.

PubMed

Ogawa, N; Yoshimi, R; Yasuda, K; Tsukazaki, A; Kawasaki, M; Tokura, Y

2016-07-20

Magnetic interactions in topological insulators cause essential modifications in the originally mass-less surface states. They offer a mass gap at the Dirac point and/or largely deform the energy dispersion, providing a new path towards exotic physics and applications to realize dissipation-less electronics. The nonequilibrium electron dynamics at these modified Dirac states unveil additional functions, such as highly efficient photon to spin-current conversion. Here we demonstrate the generation of large zero-bias photocurrent in magnetic topological insulator thin films on mid-infrared photoexcitation, pointing to the controllable band asymmetry in the momentum space. The photocurrent spectra with a maximal response to the intra-Dirac-band excitations can be a sensitive measure for the correlation between Dirac electrons and magnetic moments.

Spintronic signatures of Klein tunneling in topological insulators

NASA Astrophysics Data System (ADS)

Xie, Yunkun; Tan, Yaohua; Ghosh, Avik W.

2017-11-01

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show an alternative way to directly measure Klein tunneling for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling.

Three-Dimensional Models of Topological Insulators: Engineering of Dirac Cones and Robustness of the Spin Texture

NASA Astrophysics Data System (ADS)

Soriano, David; Ortmann, Frank; Roche, Stephan

2012-12-01

We design three-dimensional models of topological insulator thin films, showing a tunability of the odd number of Dirac cones driven by the atomic-scale geometry at the boundaries. A single Dirac cone at the Γ-point can be obtained as well as full suppression of quantum tunneling between Dirac states at geometrically differentiated surfaces. The spin texture of surface states changes from a spin-momentum-locking symmetry to a surface spin randomization upon the introduction of bulk disorder. These findings illustrate the richness of the Dirac physics emerging in thin films of topological insulators and may prove utile for engineering Dirac cones and for quantifying bulk disorder in materials with ultraclean surfaces.

Analytic model of a magnetically insulated transmission line with collisional flow electrons

NASA Astrophysics Data System (ADS)

Stygar, W. A.; Wagoner, T. C.; Ives, H. C.; Corcoran, P. A.; Cuneo, M. E.; Douglas, J. W.; Gilliland, T. L.; Mazarakis, M. G.; Ramirez, J. J.; Seamen, J. F.; Seidel, D. B.; Spielman, R. B.

2006-09-01

We have developed a relativistic-fluid model of the flow-electron plasma in a steady-state one-dimensional magnetically insulated transmission line (MITL). The model assumes that the electrons are collisional and, as a result, drift toward the anode. The model predicts that in the limit of fully developed collisional flow, the relation between the voltage Va, anode current Ia, cathode current Ik, and geometric impedance Z0 of a 1D planar MITL can be expressed as Va=IaZ0h(χ), where h(χ)≡[(χ+1)/4(χ-1)]1/2-ln⁡⌊χ+(χ2-1)1/2⌋/2χ(χ-1) and χ≡Ia/Ik. The relation is valid when Va≳1MV. In the minimally insulated limit, the anode current Ia,min⁡=1.78Va/Z0, the electron-flow current If,min⁡=1.25Va/Z0, and the flow impedance Zf,min⁡=0.588Z0. {The electron-flow current If≡Ia-Ik. Following Mendel and Rosenthal [Phys. Plasmas 2, 1332 (1995)PHPAEN1070-664X10.1063/1.871345], we define the flow impedance Zf as Va/(Ia2-Ik2)1/2.} In the well-insulated limit (i.e., when Ia≫Ia,min⁡), the electron-flow current If=9Va2/8IaZ02 and the flow impedance Zf=2Z0/3. Similar results are obtained for a 1D collisional MITL with coaxial cylindrical electrodes, when the inner conductor is at a negative potential with respect to the outer, and Z0≲40Ω. We compare the predictions of the collisional model to those of several MITL models that assume the flow electrons are collisionless. We find that at given values of Va and Z0, collisions can significantly increase both Ia,min⁡ and If,min⁡ above the values predicted by the collisionless models, and decrease Zf,min⁡. When Ia≫Ia,min⁡, we find that, at given values of Va, Z0, and Ia, collisions can significantly increase If and decrease Zf. Since the steady-state collisional model is valid only when the drift of electrons toward the anode has had sufficient time to establish fully developed collisional flow, and collisionless models assume there is no net electron drift toward the anode, we expect these two types of models to provide theoretical bounds on Ia, If, and Zf.

Experimental study of surface insulated-standard hybrid tungsten planar wire array Z-pinches at "QiangGuang-I" facility

NASA Astrophysics Data System (ADS)

Sheng, Liang; Peng, Bodong; Li, Yang; Yuan, Yuan; Li, Mo; Zhang, Mei; Zhao, Chen; Zhao, Jizhen; Wang, Liangping

2016-01-01

The experimental results of the insulated-standard hybrid wire array Z pinches carried out on "QiangGuang-I" facility at Northwest Institute of Nuclear Technology were presented and discussed. The surface insulating can impose a significant influence on the dynamics and radiation characteristics of the hybrid wire array Z pinches, especially on the early stage (t/timp < 0.6). The expansion of insulated wires at the ablation stage is suppressed, while the streams stripped from the insulated wires move faster than that from the standard wires. The foot radiation of X-ray is enhanced by increment of the number of insulated wires, 19.6 GW, 33.6 GW, and 68.6 GW for shots 14037S, 14028H, and 14039I, respectively. The surface insulation also introduces nonhomogeneity along the single wire—the streams move much faster near the electrodes. The colliding boundary of the hybrid wire array Z pinches is bias to the insulated side approximately 0.6 mm.

Acoustic topological insulator and robust one-way sound transport

NASA Astrophysics Data System (ADS)

He, Cheng; Ni, Xu; Ge, Hao; Sun, Xiao-Chen; Chen, Yan-Bin; Lu, Ming-Hui; Liu, Xiao-Ping; Chen, Yan-Feng

2016-12-01

Topological design of materials enables topological symmetries and facilitates unique backscattering-immune wave transport. In airborne acoustics, however, the intrinsic longitudinal nature of sound polarization makes the use of the conventional spin-orbital interaction mechanism impossible for achieving band inversion. The topological gauge flux is then typically introduced with a moving background in theoretical models. Its practical implementation is a serious challenge, though, due to inherent dynamic instabilities and noise. Here we realize the inversion of acoustic energy bands at a double Dirac cone and provide an experimental demonstration of an acoustic topological insulator. By manipulating the hopping interaction of neighbouring ’atoms’ in this new topological material, we successfully demonstrate the acoustic quantum spin Hall effect, characterized by robust pseudospin-dependent one-way edge sound transport. Our results are promising for the exploration of new routes for experimentally studying topological phenomena and related applications, for example, sound-noise reduction.

Investigations of Topological Surface States in Sb (111) Ultrathin Films by STM/STS Experiments and DFT Calculations

NASA Astrophysics Data System (ADS)

Luo, Ziyu; Yao, Guanggeng; Xu, Wentao; Feng, Yuanping; Wang, Xue-Sen

2014-03-01

Bulk Sb was regarded as a semimetal with a nontrivial topological order. It is worth exploring whether the Sb ultrathin film has the potential to be an elementary topological insulator. In the presence of quantum confinement effect, we investigated the evolution of topological surface states in Sb (111) ultrathin films with different thickness by the scanning tunneling microscopy/ spectroscopy (STM/STS) experiments and density functional theory (DFT) calculations. By comparing the quasiparticle interference (QPI) patterns obtained from Fourier-transform scanning tunneling spectroscopy (FT-STS) and from DFT calculations, we successfully derive the spin properties of topological surface states on Sb (111) ultrathin films. In addition, based on the DFT calculations, the 8BL Sb (111) ultrathin film was proved to possess up to 30% spinseparated topological surface states within the bandgap. Therefore, the highquality 8BL Sb (111) ultrathin film could be regarded as an elementary topological insulator.

Non-Abelian fractional topological insulators in three spatial dimensions from coupled wires

NASA Astrophysics Data System (ADS)

Iadecola, Thomas; Neupert, Titus; Chamon, Claudio; Mudry, Christopher

The study of topological order in three spatial dimensions constitutes a major frontier in theoretical condensed matter physics. Recently, substantial progress has been made in constructing (3+1)-dimensional Abelian topological states of matter from arrays of coupled quantum wires. In this talk, I will illustrate how wire constructions based on non-Abelian bosonization can be used to build and characterize non-Abelian symmetry-enriched topological phases in three dimensions. In particular, I will describe a family of states of matter, constructed in this way, that constitute a natural non-Abelian generalization of strongly correlated three dimensional fractional topological insulators. These states of matter support strongly interacting symmetry-protected gapless surface states, and host non-Abelian pointlike and linelike excitations in the bulk.

Transforming common III-V/II-VI insulating building blocks into topological heterostructure via the intrinsic electric polarization

NASA Astrophysics Data System (ADS)

Zunger, Alex; Zhang, Xiuwen; Abdalla, Leonardo; Liu, Qihang

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological heterostructure. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We demonstrate this paradigm of designing TIs from ordinary semiconductors via first-principle calculations on III-V/II-VI superlattice InSb/CdTe. We illustrate the relationship between the interfacial stability and the topological transition, finding a ``window of opportunity'' where both conditions can be optimized. This work illustrates the general principles of co-evaluation of TI functionality with thermodynamic stability as a route of identifying realistic combination of common insulators that could produce topological heterostructures. This work was supported by Basic Energy Science, MSE division (Grant DE-FG02-13ER46959).

Unexpected superconductivity at nanoscale junctions made on the topological crystalline insulator Pb0.6Sn0.4Te

NASA Astrophysics Data System (ADS)

Das, Shekhar; Aggarwal, Leena; Roychowdhury, Subhajit; Aslam, Mohammad; Gayen, Sirshendu; Biswas, Kanishka; Sheet, Goutam

2016-09-01

Discovery of exotic phases of matter from the topologically non-trivial systems not only makes the research on topological materials more interesting but also enriches our understanding of the fascinating physics of such materials. Pb0.6Sn0.4Te was recently shown to be a topological crystalline insulator. Here, we show that by forming a mesoscopic point-contact using a normal non-superconducting elemental metal on the surface of Pb0.6Sn0.4Te, a superconducting phase is created locally in a confined region under the point-contact. This happens when the bulk of the sample remains to be non-superconducting, and the superconducting phase emerges as a nano-droplet under the point-contact. The superconducting phase shows a high transition temperature Tc that varies for different point-contacts and falls in a range between 3.7 K and 6.5 K. Therefore, this Letter presents the discovery of a superconducting phase on the surface of a topological crystalline insulator, and the discovery is expected to shed light on the mechanism of induced superconductivity in topologically non-trivial systems in general.

An accuracy improvement method for the topology measurement of an atomic force microscope using a 2D wavelet transform.

PubMed

Yoon, Yeomin; Noh, Suwoo; Jeong, Jiseong; Park, Kyihwan

2018-05-01

The topology image is constructed from the 2D matrix (XY directions) of heights Z captured from the force-feedback loop controller. For small height variations, nonlinear effects such as hysteresis or creep of the PZT-driven Z nano scanner can be neglected and its calibration is quite straightforward. For large height variations, the linear approximation of the PZT-driven Z nano scanner fail and nonlinear behaviors must be considered because this would cause inaccuracies in the measurement image. In order to avoid such inaccuracies, an additional strain gauge sensor is used to directly measure displacement of the PZT-driven Z nano scanner. However, this approach also has a disadvantage in its relatively low precision. In order to obtain high precision data with good linearity, we propose a method of overcoming the low precision problem of the strain gauge while its feature of good linearity is maintained. We expect that the topology image obtained from the strain gauge sensor showing significant noise at high frequencies. On the other hand, the topology image obtained from the controller output showing low noise at high frequencies. If the low and high frequency signals are separable from both topology images, the image can be constructed so that it is represented with high accuracy and low noise. In order to separate the low frequencies from high frequencies, a 2D Haar wavelet transform is used. Our proposed method use the 2D wavelet transform for obtaining good linearity from strain gauge sensor and good precision from controller output. The advantages of the proposed method are experimentally validated by using topology images. Copyright © 2018 Elsevier B.V. All rights reserved.

Dynamical analysis of surface-insulated planar wire array Z-pinches

NASA Astrophysics Data System (ADS)

Li, Yang; Sheng, Liang; Hei, Dongwei; Li, Xingwen; Zhang, Jinhai; Li, Mo; Qiu, Aici

2018-05-01

The ablation and implosion dynamics of planar wire array Z-pinches with and without surface insulation are compared and discussed in this paper. This paper first presents a phenomenological model named the ablation and cascade snowplow implosion (ACSI) model, which accounts for the ablation and implosion phases of a planar wire array Z-pinch in a single simulation. The comparison between experimental data and simulation results shows that the ACSI model could give a fairly good description about the dynamical characteristics of planar wire array Z-pinches. Surface insulation introduces notable differences in the ablation phase of planar wire array Z-pinches. The ablation phase is divided into two stages: insulation layer ablation and tungsten wire ablation. The two-stage ablation process of insulated wires is simulated in the ACSI model by updating the formulas describing the ablation process.

Faraday Rotation Due to Surface States in the Topological Insulator (Bi1-xSbx)2Te3.

PubMed

Shao, Yinming; Post, Kirk W; Wu, Jhih-Sheng; Dai, Siyuan; Frenzel, Alex J; Richardella, Anthony R; Lee, Joon Sue; Samarth, Nitin; Fogler, Michael M; Balatsky, Alexander V; Kharzeev, Dmitri E; Basov, D N

2017-02-08

Using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb) 2 Te 3 thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. The FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way for observing many exotic quantum phenomena in topological insulators.