An Improved Model Predictive Current Controller of Switched Reluctance Machines Using Time-Multiplexed Current Sensor

PubMed Central

Li, Bingchu; Ling, Xiao; Huang, Yixiang; Gong, Liang; Liu, Chengliang

2017-01-01

This paper presents a fixed-switching-frequency model predictive current controller using multiplexed current sensor for switched reluctance machine (SRM) drives. The converter was modified to distinguish currents from simultaneously excited phases during the sampling period. The only current sensor installed in the converter was time division multiplexing for phase current sampling. During the commutation stage, the control steps of adjacent phases were shifted so that sampling time was staggered. The maximum and minimum duty ratio of pulse width modulation (PWM) was limited to keep enough sampling time for analog-to-digital (A/D) conversion. Current sensor multiplexing was realized without complex adjustment of either driver circuit nor control algorithms, while it helps to reduce the cost and errors introduced in current sampling due to inconsistency between sensors. The proposed controller is validated by both simulation and experimental results with a 1.5 kW three-phase 12/8 SRM. Satisfied current sampling is received with little difference compared with independent phase current sensors for each phase. The proposed controller tracks the reference current profile as accurately as the model predictive current controller with independent phase current sensors, while having minor tracking errors compared with a hysteresis current controller. PMID:28513554

A β-Ta system for current induced magnetic switching in the absence of external magnetic field

NASA Astrophysics Data System (ADS)

Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

2018-05-01

Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages

DOEpatents

Su, Gui-Jia [Knoxville, TN

2005-11-29

A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

A zero-voltage-switched three-phase interleaved buck converter

NASA Astrophysics Data System (ADS)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

SEPP-ZVS High Frequency Inverter Incorporating Auxiliary Switch

NASA Astrophysics Data System (ADS)

Ogiwara, Hiroyuki; Itoi, Misao; Nakaoka, Mutsuo

This paper presents a novel circuit topology to attain ZVS operation of a high frequency inverter over a wide range output power regulation using a PWM control technique by connecting an auxiliary switch to the conventional single ended push-pull (SEPP) ZVS high frequency inverter. A switching current is injected into the main switches via the auxiliary switch only during the short period between its turn-on and off times to supply a current required for its ZVS operation.

Proportional mechanical ventilation through PWM driven on/off solenoid valve.

PubMed

Sardellitti, I; Cecchini, S; Silvestri, S; Caldwell, D G

2010-01-01

Proportional strategies for artificial ventilation are the most recent form of synchronized partial ventilatory assistance and intra-breath control techniques available in clinical practice. Currently, the majority of commercial ventilators allowing proportional ventilation uses proportional valves to generate the flow rate pattern. This paper proposes on-off solenoid valves for proportional ventilation given their small size, low cost and short switching time, useful for supplying high frequency ventilation. A new system based on a novel fast switching driver circuit combined with on/off solenoid valve is developed. The average short response time typical of onoff solenoid valves was further reduced through the driving circuit for the implementation of PWM control. Experimental trials were conducted for identifying the dynamic response of the PWM driven on/off valve and for verifying its effectiveness in generating variable-shaped ventilatory flow rate patterns. The system was able to smoothly follow the reference flow rate patterns also changing in time intervals as short as 20 ms, achieving a flow rate resolution up to 1 L/min and repeatability in the order of 0.5 L/min. Preliminary results showed the feasibility of developing a stand alone portable device able to generate both proportional and high frequency ventilation by only using on-off solenoid valves.

Analysis of a PWM Resonant Buck Chopper for Use as a Ship Service Converter Module

DTIC Science & Technology

1999-01-01

zonal architecture [2] has a number of advantages over the current radial distribution architecture. The radial network includes generators supplying...Several representative topologies are considered in this section. The literature is replete with softswitching dc-dc converter topologies and control...differs from a conventional PWM buck by the addition of a resonant network consisting of inductor Lr, capacitor Q, an auxiliary switch Sr, an auxiliary

The chording effect on core losses of three-phase induction motor under sinusoidal and PWM voltage supplies

NASA Astrophysics Data System (ADS)

Deshmukh, Ram; Moses, A. J.; Anayi, F.

The core losses and the lower-order voltage harmonics of four different chorded motors fed from sinusoidal supply and inverter voltage supply were invigilated at no-load condition. All the four motors were tested with 4, 8 and 16 kHz switching frequencies and 30, 40, 50 and 60 Hz modulation frequencies The motor with 120° coil pitch has the least core losses and the lower-order voltage harmonics under sinusoidal and pulse width modulation (PWM) voltage supplies at all switching and modulation frequencies. The drop in the core losses for this motor was 46% and 53% under sinusoidal and PWM voltage supplies, respectively. The motor with 120° coil pitch is recommended to be used under sinusoidal and PWM voltage supplies.

Optimal feed-forward compensation for PWM dc/dc converters with 'linear' and 'quadratic' conversion ratio

NASA Astrophysics Data System (ADS)

Calderone, Luigi; Pinola, Licia; Varoli, Vincenzo

1992-04-01

The paper describes an analytical procedure to optimize the feed-forward compensation for any PWM dc/dc converters. The aims of achieving zero dc audiosusceptibility was found to be possible for the buck, buck-boost, Cuk, and SEPIC cells; for the boost converter, however, only nonoptimal compensation is feasible. Rules for the design of PWM controllers and procedures for the evaluation of the hardware-introduced errors are discussed. A PWM controller implementing the optimal feed-forward compensation for buck-boost, Cuk, and SEPIC cells is described and fully experimentally characterized.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Using a small hybrid pulse power transformer unit as component of a high-current opening switch for a railgun

NASA Astrophysics Data System (ADS)

Leung, E. M. W.; Bailey, R. E.; Michels, P. H.

1989-03-01

The hybrid pulse power transformer (HPPT) is a unique concept utilizing the ultrafast superconducting-to-normal transition process of a superconductor. When used in the form of a hybrid transformer current-zero switch (HTCS), this creates an approach in which the large, high-power, high-current opening switch in a conventional railgun system can be eliminated. This represents an innovative application of superconductivity to pulsed power conditioning required for the Strategic Defense Initiative (SDI). The authors explain the working principles of a 100-KJ unit capable of switching up to 500 kA at a frequency of 0.5 Hz and with a system efficiency of greater than 90 percent. Circuit analysis using a computer code called SPICE PLUS was used to verify the HTCS concept. This concept can be scaled up to applications in the several mega-ampere levels.

Applying PWM to control overcurrents at unbalanced faults of force-commutated VSCs used as static var compensators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Y.; Ekstroem, A.

1997-01-01

This study is devoted to investigating the possibility of controlling the overcurrent of a forced-commutated voltage source converter (VSC) by PWM when the ac system is undergoing large unbalanced disturbance. The converter is supposed to be used as a static var compensator at a high power level. A novel control strategy is proposed for controlling the reactive current and the dc side voltage independently. Digital simulation results are presented and compared with the results by using just the reactive current control with fundamental switching frequency.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Shuttle-promoted nano-mechanical current switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Taegeun, E-mail: tsong@ictp.it; Kiselev, Mikhail N.; Gorelik, Leonid Y.

2015-09-21

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instabilitymore » and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.« less

Hybrid switch for resonant power converters

DOEpatents

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Design and test hardware for a solar array switching unit

NASA Technical Reports Server (NTRS)

Patil, A. R.; Cho, B. H.; Sable, D.; Lee, F. C.

1992-01-01

This paper describes the control of a pulse width modulated (PWM) type sequential shunt switching unit (SSU) for spacecraft applications. It is found that the solar cell output capacitance has a significant impact on SSU design. Shorting of this cell capacitance by the PWM switch causes input current surges. These surges are minimized by the use of a series filter inductor. The system with a filter is analyzed for ripple and the control to output-voltage transfer function. Stable closed loop design considerations are discussed. The results are supported by modeling and measurements of loop gain and of closed-loop bus impedance on test hardware for NASA's 120 V Earth Observation System (EOS). The analysis and modeling are also applicable to NASA's 160 V Space Station power system.

Current-driven thermo-magnetic switching in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

An improved fault-tolerant control scheme for PWM inverter-fed induction motor-based EVs.

PubMed

Tabbache, Bekheïra; Benbouzid, Mohamed; Kheloui, Abdelaziz; Bourgeot, Jean-Matthieu; Mamoune, Abdeslam

2013-11-01

This paper proposes an improved fault-tolerant control scheme for PWM inverter-fed induction motor-based electric vehicles. The proposed strategy deals with power switch (IGBTs) failures mitigation within a reconfigurable induction motor control. To increase the vehicle powertrain reliability regarding IGBT open-circuit failures, 4-wire and 4-leg PWM inverter topologies are investigated and their performances discussed in a vehicle context. The proposed fault-tolerant topologies require only minimum hardware modifications to the conventional off-the-shelf six-switch three-phase drive, mitigating the IGBTs failures by specific inverter control. Indeed, the two topologies exploit the induction motor neutral accessibility for fault-tolerant purposes. The 4-wire topology uses then classical hysteresis controllers to account for the IGBT failures. The 4-leg topology, meanwhile, uses a specific 3D space vector PWM to handle vehicle requirements in terms of size (DC bus capacitors) and cost (IGBTs number). Experiments on an induction motor drive and simulations on an electric vehicle are carried-out using a European urban driving cycle to show that the proposed fault-tolerant control approach is effective and provides a simple configuration with high performance in terms of speed and torque responses. Copyright © 2013 ISA. Published by Elsevier Ltd. All rights reserved.

Color adjustable LED driver design based on PWM

NASA Astrophysics Data System (ADS)

Du, Yiying; Yu, Caideng; Que, Longcheng; Zhou, Yun; Lv, Jian

2012-10-01

Light-emitting diode (LED) is a liquid cold source light source that rapidly develops in recent years. The merits of high brightness efficiency, long duration, high credibility and no pollution make it satisfy our demands for consumption and natural life, and gradually replace the traditional lamp-house-incandescent light and fluorescent light. However, because of the high cost and unstable drive circuit, the application range is restricted. To popularize the applications of the LED, we focus on improving the LED driver circuit to change this phenomenon. Basing on the traditional LED drive circuit, we adopt pre-setup constant current model and introduce pulse width modulation (PWM) control method to realize adjustable 256 level-grays display. In this paper, basing on human visual characteristics and the traditional PWM control method, we propose a new PWM control timing clock to alter the duty cycle of PWM signal to realize the simple gamma correction. Consequently, the brightness can accord with our visual characteristics.

Utilizing zero-sequence switchings for reversible converters

DOEpatents

Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

2004-12-14

A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

Optical zero-differential pressure switch and its evaluation in a multiple pressure measuring system

NASA Technical Reports Server (NTRS)

Powell, J. A.

1977-01-01

The design of a clamped-diaphragm pressure switch is described in which diaphragm motion is detected by a simple fiber-optic displacement sensor. The switch was evaluated in a pressure measurement system where it detected the zero crossing of the differential pressure between a static test pressure and a tank pressure that was periodically ramped from near zero to fullscale gage pressure. With a ramping frequency of 1 hertz and a full-scale tank pressure of 69 N/sq cm gage (100 psig), the switch delay was as long as 2 milliseconds. Pressure measurement accuracies were 0.25 to 0.75 percent of full scale. Factors affecting switch performance are also discussed.

Dependence of transition width on current and critical current in transition-edge sensors

NASA Astrophysics Data System (ADS)

Morgan, K. M.; Pappas, C. G.; Bennett, D. A.; Gard, J. D.; Hays-Wehle, J. P.; Hilton, G. C.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Swetz, D. S.

2017-05-01

In superconducting transition-edge sensor X-ray detectors, we observe that as the thermal conductance (G) to the heat bath increases, the resistive transition broadens. Consequently, the sensitivity of films to deposited energy worsens. Using a two-fluid model for the superconducting-to-normal transition in a thin film, we show that this broadening can be attributed to the larger current (I0) necessary for biasing the film at a given point in the transition for higher-G devices, resulting in a higher Ic0/I0 ratio (Ic0 is the film's critical current at zero temperature). To recover a sharper transition, we fabricated rectangular films with varying numbers of internal normal-metal structures while keeping G constant, allowing the independent variation of both I0 and Ic0. We show that it is possible to manipulate the transition width and G independently, thus enabling fast thermal sensors with an excellent energy resolution.

Transistorized PWM inverter-induction motor drive system

NASA Technical Reports Server (NTRS)

Peak, S. C.; Plunkett, A. B.

1982-01-01

This paper describes the development of a transistorized PWM inverter-induction motor traction drive system. A vehicle performance analysis was performed to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of inverter and motor specifications. The inverter was a transistorized three-phase bridge using General Electric power Darlington transistors. The description of the design and development of this inverter is the principal object of this paper. The high-speed induction motor is a design which is optimized for use with an inverter power source. The primary feedback control is a torque angle control with voltage and torque outer loop controls. A current-controlled PWM technique is used to control the motor voltage. The drive has a constant torque output with PWM operation to base motor speed and a constant horsepower output with square wave operation to maximum speed. The drive system was dynamometer tested and the results are presented.

Lower Current Large Deviations for Zero-Range Processes on a Ring

NASA Astrophysics Data System (ADS)

Chleboun, Paul; Grosskinsky, Stefan; Pizzoferrato, Andrea

2017-04-01

We study lower large deviations for the current of totally asymmetric zero-range processes on a ring with concave current-density relation. We use an approach by Jensen and Varadhan which has previously been applied to exclusion processes, to realize current fluctuations by travelling wave density profiles corresponding to non-entropic weak solutions of the hyperbolic scaling limit of the process. We further establish a dynamic transition, where large deviations of the current below a certain value are no longer typically attained by non-entropic weak solutions, but by condensed profiles, where a non-zero fraction of all the particles accumulates on a single fixed lattice site. This leads to a general characterization of the rate function, which is illustrated by providing detailed results for four generic examples of jump rates, including constant rates, decreasing rates, unbounded sublinear rates and asymptotically linear rates. Our results on the dynamic transition are supported by numerical simulations using a cloning algorithm.

dc analysis and design of zero-voltage-switched multi-resonant converters

NASA Astrophysics Data System (ADS)

Tabisz, Wojciech A.; Lee, Fred C.

Recently introduced multiresonant converters (MRCs) provide zero-voltage switching (ZVS) of both active and passive switches and offer a substantial reduction of transistor voltage stress and an increase of load range, compared to their quasi-resonant converter counterparts. Using the resonant switch concept, a simple, generalized analysis of ZVS MRCs is presented. The conversion ratio and voltage stress characteristics are derived for basic ZVS MRCs, including buck, boost, and buck/boost converters. Based on the analysis, a design procedure that optimizes the selection of resonant elements for maximum conversion efficiency is proposed.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

PubMed

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Reconfigurable optofluidic switch for generation of optical pulse width modulation based on tunable reflective interface.

PubMed

Mansuori, M; Zareei, G H; Hashemi, H

2015-10-01

We present a numerical method for generation of optical pulse width modulation (PWM) based on tunable reflective interface by using a microfluidic droplet. We demonstrate a single layer, planar, optofluidic PWM switch that is driven by excited alternating microbubbles. The main parameters of generation of this PWM such as frequency and speed of switching can be controlled by the mass flow rates of input fluids, and the shape of plug or droplet. Advantages of this design are the reconfigurability in design and the easy control of the switching parameters. The validation of the proposed design is carried out by employing the finite element method (FEM) for the mechanical simulation and the finite-difference time-domain (FDTD) for the optical simulation.

Transient current interruption mechanism in a magnetically delayed vacuum switch

NASA Technical Reports Server (NTRS)

Morris, Gibson, Jr.; Dougal, Roger A.

1993-01-01

The capacity of a magnetically delayed vacuum switch to conduct current depends on the density of plasma injected into the switch. Exceeding the current capacity results in the switch entering a lossy mode of operation characterized by a transient interruption of the main current (opening behavior) and a rapid increase of voltage across the vacuum gap. Streak and framing photographs of the discharge indicate that a decrease of luminosity near the middle of the gap preceeds the transition to the opening phase. The zone of low luminosity propagates toward the cathode. This evidence suggests that the mechanism causing the opening phase is erosion of the background plasma in a manner similar to that in a plasma-opening switch. The resulting ion depletion forces a space-charge-limited conduction mode. The switch inductance maintains a high discharge current even during the space-charge-limited conduction phase, thus producing high internal fields. The high accelerating voltage, in turn, produces electron and ion beams that heat the electrode surfaces. As a result of the heating, jets of electrode vapor issue from the electrodes, either cathode or anode, depending on the selection of electrode materials.

Fast controller for a unity-power-factor PWM rectifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eissa, M.O.; Leeb, S.B.; Verghese, G.C.

1996-01-01

This paper presents an analog implementation of a fast controller for a unity-power-factor (UPF) PWM rectifier. The best settling times of many popular controllers for this type of converter are on the order of a few line cycles, corresponding to bandwidths under 20 Hz. The fast controller demonstrated in this paper can exercise control action at a rate comparable to the switching frequency rather than the line frequency. In order to accomplish this while maintaining unity power factor during steady-state operation, the fast controller employs a ripple-feedback cancellation scheme.

Field-Tuned Superconductor-Insulator Transition with and without Current Bias.

PubMed

Bielejec, E; Wu, Wenhao

2002-05-20

The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin beryllium films quench condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product nuz = 1.35+/-0.10 and a critical sheet resistance, R(c), of about 1.2R(Q), with R(Q) = h/4e(2). However, in the presence of dc bias currents that are smaller than the zero-field critical currents, nuz becomes 0.75+/-0.10. This new set of exponents suggests that the field-tuned transitions with and without a dc bias current belong to different universality classes.

Modeling of switching regulator power stages with and without zero-inductor-current dwell time

NASA Technical Reports Server (NTRS)

Lee, F. C.; Yu, Y.; Triner, J. E.

1976-01-01

State space techniques are employed to derive accurate models for buck, boost, and buck/boost converter power stages operating with and without zero-inductor-current dwell time. A generalized procedure is developed which treats the continuous-inductor-current mode without the dwell time as a special case of the discontinuous-current mode, when the dwell time vanishes. An abrupt change of system behavior including a reduction of the system order when the dwell time appears is shown both analytically and experimentally.

Ping-pong auto-zero amplifier with glitch reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larson, Mark R

A ping-pong amplifier with reduced glitching is described. The ping-pong amplifier includes a nulling amplifier coupled to a switching network. The switching network is used to auto-zero a ping amplifier within a ping-pong amplifier. The nulling amplifier drives the output of a ping amplifier to a proper output voltage level during auto-zeroing of the ping amplifier. By being at a proper output voltage level, glitches associated with transitioning between a ping amplifier and a pong amplifier are reduced or eliminated.

State-plane analysis of zero-voltage-switching resonant dc/dc power converters

NASA Astrophysics Data System (ADS)

Kazimierczuk, Marian K.; Morse, William D.

The state-plane analysis technique for the zero-voltage-switching resonant dc/dc power converter family of topologies, namely the buck, boost, buck-boost, and Cuk converters is established. The state plane provides a compression of information that allows the designer to uniquely examine the nonlinear dynamics of resonant converter operation. Utilizing the state plane, resonant converter modes of operation are examined and the switching frequencies are derived for the boundaries between these modes, including the boundary of energy conversion.

Methods, systems and apparatus for adjusting duty cycle of pulse width modulated (PWM) waveforms

DOEpatents

Gallegos-Lopez, Gabriel; Kinoshita, Michael H; Ransom, Ray M; Perisic, Milun

2013-05-21

Embodiments of the present invention relate to methods, systems and apparatus for controlling operation of a multi-phase machine in a vector controlled motor drive system when the multi-phase machine operates in an overmodulation region. The disclosed embodiments provide a mechanism for adjusting a duty cycle of PWM waveforms so that the correct phase voltage command signals are applied at the angle transitions. This can reduce variations/errors in the phase voltage command signals applied to the multi-phase machine so that phase current may be properly regulated thus reducing current/torque oscillation, which can in turn improve machine efficiency and performance, as well as utilization of the DC voltage source.

Circularly polarized zero-phonon transitions of vacancies in diamond at high magnetic fields

NASA Astrophysics Data System (ADS)

Braukmann, D.; Glaser, E. R.; Kennedy, T. A.; Bayer, M.; Debus, J.

2018-05-01

We study the circularly polarized photoluminescence of negatively charged (NV-) and neutral (NV0) nitrogen-vacancy ensembles and neutral vacancies (V0) in diamond crystals exposed to magnetic fields of up to 10 T. We determine the orbital and spin Zeeman splitting as well as the energetic ordering of their ground and first-excited states. The spin-triplet and -singlet states of the NV- are described by an orbital Zeeman splitting of about 9 μ eV /T , which corresponds to a positive orbital g -factor of gL=0.164 under application of the magnetic field along the (001) and (111) crystallographic directions, respectively. The zero-phonon line (ZPL) of the NV- singlet is defined as a transition from the 1E' states, which are split by gLμBB , to the 1A1 state. The energies of the zero-phonon triplet transitions show a quadratic dependence on intermediate magnetic field strengths, which we attribute to a mixing of excited states with nonzero orbital angular momentum. Moreover, we identify slightly different spin Zeeman splittings in the ground (gs) and excited (es) triplet states, which can be expressed by a deviation between their spin g -factors: gS ,es=gS ,gs+Δ g with values of Δ g =0.014 and 0.029 in the (001) and (111) geometries, respectively. The degree of circular polarization of the NV- ZPLs depends significantly on the temperature, which is explained by an efficient spin-orbit coupling of the excited states mediated through acoustic phonons. We further demonstrate that the sign of the circular polarization degree is switched under rotation of the diamond crystal. A weak Zeeman splitting similar to Δ g μBB measured for the NV- ZPLs is also obtained for the NV0 zero-phonon lines, from which we conclude that the ground state is composed of two optically active states with compensated orbital contributions and opposite spin-1/2 momentum projections. The zero-phonon lines of the V0 show Zeeman splittings and degrees of the circular polarization with opposite

Current-driven orbital order-disorder transition in LaMnO3

NASA Astrophysics Data System (ADS)

Mondal, Parthasarathi; Bhattacharya, Dipten; Mandal, P.

2011-08-01

We report a significant influence of electric current on the orbital order-disorder transition in LaMnO3. The transition temperature TOO, thermal hysteresis in the resistivity ρ versus temperature T plot around TOO, and latent heat L associated with the transition decrease with an increase in current density. Eventually, at a critical current density, L reaches zero. The transition zone, on the other hand, broadens with an increase in current density. The states at ordered, disordered, and transition zones are all found to be stable within the time window from ˜10-3 to ˜104 s.

A Method of Maximum Power Control in Single-phase Utility Interactive Photovoltaic Generation System by using PWM Current Source Inverter

NASA Astrophysics Data System (ADS)

Neba, Yasuhiko

This paper deals with a maximum power point tracking (MPPT) control of the photovoltaic generation with the single-phase utility interactive inverter. The photovoltaic arrays are connected by employing the PWM current source inverter to the utility. The use of the pulsating dc current and voltage allows the maximum power point to be searched. The inverter can regulate the array voltage and keep the arrays to the maximum power. This paper gives the control method and the experimental results.

Performance analysis of cascaded h-bridge multilevel inverter using mixed switching frequency with various dc-link voltages

NASA Astrophysics Data System (ADS)

Citarsa, I. B. F.; Satiawan, I. N. W.; Wiryajati, I. K.; Supriono

2016-01-01

Multilevel inverters have been widely used in many applications since the technology is advantageous to increase the converter capability as well as to improve the output voltage quality. According to the applied switching frequency, multilevel modulations can be subdivided into three classes, i.e: fundamental switching frequency, high switching frequency and mixed switching frequency. This paper investigates the performance of cascaded H-bridge (CHB) multilevel inverter that is modulated using mixed switching frequency (MSF) PWM with various dc-link voltage ratios. The simulation results show the nearly sinusoidal load output voltages are successfully achieved. It is revealed that there is improvement in output voltages quality in terms of THD and low-order harmonics content. The CHB inverter that is modulated using MSF PWM with equal dc-link voltage ratio (½ Vdc: ½ Vdc) produces output voltage with the lowest low-order harmonics (less than 1% of fundamental) while the CHB inverter that is modulated using MSF PWM with un-equal dc-link voltage ratio (2/3 Vdc: 1/3 Vdc) produces a 7-level output voltage with the lowest THD (16.31%) compared to the other PWM methods. Improvement of the output voltage quality here is also in line with improvement of the number of available levels provided in the output voltage. Here only 2 cells H-bridge inverter (contain 8 switches) are needed to produce a 7- level output voltage, while in the conventional CHB inverter at least 3 cells of H-bridge inverter (contain 12 switches) are needed to produce a 7-level output voltage. Hence it is valuable in term of saving number of component.

Bi-directional power control system for voltage converter

DOEpatents

Garrigan, Neil Richard; King, Robert Dean; Schwartz, James Edward

1999-01-01

A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals.

FAST ACTING CURRENT SWITCH

DOEpatents

Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

1962-05-22

A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

Emerging memories: resistive switching mechanisms and current status

NASA Astrophysics Data System (ADS)

Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

2012-07-01

The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

Improving dynamic performances of PWM-driven servo-pneumatic systems via a novel pneumatic circuit.

PubMed

Taghizadeh, Mostafa; Ghaffari, Ali; Najafi, Farid

2009-10-01

In this paper, the effect of pneumatic circuit design on the input-output behavior of PWM-driven servo-pneumatic systems is investigated and their control performances are improved using linear controllers instead of complex and costly nonlinear ones. Generally, servo-pneumatic systems are well known for their nonlinear behavior. However, PWM-driven servo-pneumatic systems have the advantage of flexibility in the design of pneumatic circuits which affects the input-output linearity of the whole system. A simple pneumatic circuit with only one fast switching valve is designed which leads to a quasi-linear input-output relation. The quasi-linear behavior of the proposed circuit is verified both experimentally and by simulations. Closed loop position control experiments are then carried out using linear P- and PD-controllers. Since the output position is noisy and cannot be directly differentiated, a Kalman filter is designed to estimate the velocity of the cylinder. Highly improved tracking performances are obtained using these linear controllers, compared to previous works with nonlinear controllers.

An Approach to Average Modeling and Simulation of Switch-Mode Systems

ERIC Educational Resources Information Center

Abramovitz, A.

2011-01-01

This paper suggests a pedagogical approach to teaching the subject of average modeling of PWM switch-mode power electronics systems through simulation by general-purpose electronic circuit simulators. The paper discusses the derivation of PSPICE/ORCAD-compatible average models of the switch-mode power stages, their software implementation, and…

A high efficiency PWM CMOS class-D audio power amplifier

NASA Astrophysics Data System (ADS)

Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

2009-02-01

Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

Single-Chip Microcomputer Control Of The PWM Inverter

NASA Astrophysics Data System (ADS)

Morimoto, Masayuki; Sato, Shinji; Sumito, Kiyotaka; Oshitani, Katsumi

1987-10-01

A single-chip microcomputer-based con-troller for a pulsewidth modulated 1.7 KVA inverter of an airconditioner is presented. The PWM pattern generation and the system control of the airconditioner are achieved by software of the 8-bit single-chip micro-computer. The single-chip microcomputer has the disadvantages of low processing speed and small memory capacity which can be overcome by the magnetic flux control method. The PWM pattern is generated every 90 psec. The memory capacity of the PWM look-up table is less than 2 kbytes. The simple and reliable control is realized by the software-based implementation.

Pegasus power system facility upgrades

NASA Astrophysics Data System (ADS)

Lewicki, B. T.; Kujak-Ford, B. A.; Winz, G. R.

2008-11-01

Two key Pegasus systems have been recently upgraded: the Ohmic-transformer IGCT bridge control system, and the plasma-gun injector power system. The Ohmic control system contains two new microprocessor controlled components to provide an interface between the PWM controller and the IGCT bridges. An interface board conditions the command signals from the PWM controller. A splitter/combiner board routes the conditioned PWM commands to an array of IGCT bridges and interprets IGCT bridge status. This system allows for any PWM controller to safely control IGCT bridges. Future developments will include a transition to a polyphasic bridge control. This will allow for 3 to 4 times the present pulse length and provide a much higher switching frequency. The plasma gun injector system now includes active current feedback control on gun bias current via PWM buck type power supplies. Near term goals include a doubling or tripling of the applied bias voltage. Future arc bias system power supplies may include a simpler boost type system which will allow access to even higher voltages using existing low voltage energy storage systems.

Bi-directional power control system for voltage converter

DOEpatents

Garrigan, N.R.; King, R.D.; Schwartz, J.E.

1999-05-11

A control system for a voltage converter includes: a power comparator for comparing a power signal on input terminals of the converter with a commanded power signal and producing a power comparison signal; a power regulator for transforming the power comparison signal to a commanded current signal; a current comparator for comparing the commanded current signal with a measured current signal on output terminals of the converter and producing a current comparison signal; a current regulator for transforming the current comparison signal to a pulse width modulator (PWM) duty cycle command signal; and a PWM for using the PWM duty cycle command signal to control electrical switches of the converter. The control system may further include: a command multiplier for converting a voltage signal across the output terminals of the converter to a gain signal having a value between zero (0) and unity (1), and a power multiplier for multiplying the commanded power signal by the gain signal to provide a limited commanded power signal, wherein power comparator compares the limited commanded power signal with the power signal on the input terminals. 10 figs.

CP Symmetry, Lee-Yang zeros and Phase Transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguado, M.; Asorey, M.

2011-05-23

We analyze the analytic properties of {theta}-vacuum in QCD and its connection with spontaneous symmetry breaking of CP symmetry. A loss of analyticity in the {theta}-vacuum energy density can only be due to the accumulation of Lee-Yang zeros at some real values of {theta}. In the case of first order transitions these singularities are always associated to and cusp singularities and never to or cusps, which in the case {theta} = 0 are incompatible with the Vafa-Witten diamagnetic inequality This fact provides a key missing link in the Vafa-Witten proof of parity symmetry conservation in vector-like gauge theories like QCD.more » The argument is very similar to that used in the derivation of Bank-Casher formula for chiral symmetry breaking. However, the and behavior does not exclude the existence of a first phase transition at {theta} = {pi}, where a and cusp singularity is not forbidden by any inequality; in this case the topological charge condensate is proportional to the density of Lee-Yang zeros at {theta} = {pi}. Moreover, Lee-Yang zeros could give rise to a second order phase transition at {theta} = 0, which might be very relevant for the interpretation of the anomalous behavior of the topological susceptibility in the CP{sup 1} sigma model.« less

Logo2PWM: a tool to convert sequence logo to position weight matrix.

PubMed

Gao, Zhen; Liu, Lu; Ruan, Jianhua

2017-10-03

position weight matrix (PWM) and sequence logo are the most widely used representations of transcription factor binding site (TFBS) in biological sequences. Sequence logo - a graphical representation of PWM, has been widely used in scientific publications and reports, due to its easiness of human perception, rich information, and simple format. Different from sequence logo, PWM works great as a precise and compact digitalized form, which can be easily used by a variety of motif analysis software. There are a few available tools to generate sequence logos from PWM; however, no tool does the reverse. Such tool to convert sequence logo back to PWM is needed to scan a TFBS represented in logo format in a publication where the PWM is not provided or hard to be acquired. A major difficulty in developing such tool to convert sequence logo to PWM is to deal with the diversity of sequence logo images. We propose logo2PWM for reconstructing PWM from a large variety of sequence logo images. Evaluation results on over one thousand logos from three sources of different logo format show that the correlation between the reconstructed PWMs and the original PWMs are constantly high, where median correlation is greater than 0.97. Because of the high recognition accuracy, the easiness of usage, and, the availability of both web-based service and stand-alone application, we believe that logo2PWM can readily benefit the study of transcription by filling the gap between sequence logo and PWM.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is

Switched-capacitor isolated LED driver

DOEpatents

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

External noise-induced transitions in a current-biased Josephson junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Qiongwei; Xue, Changfeng, E-mail: cfxue@163.com; Tang, Jiashi

We investigate noise-induced transitions in a current-biased and weakly damped Josephson junction in the presence of multiplicative noise. By using the stochastic averaging procedure, the averaged amplitude equation describing dynamic evolution near a constant phase difference is derived. Numerical results show that a stochastic Hopf bifurcation between an absorbing and an oscillatory state occurs. This means the external controllable noise triggers a transition into the non-zero junction voltage state. With the increase of noise intensity, the stationary probability distribution peak shifts and is characterised by increased width and reduced height. And the different transition rates are shown for large andmore » small bias currents.« less

High-voltage, high-current, solid-state closing switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Focia, Ronald Jeffrey

2017-08-22

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Thin grain oriented electrical steel for PWM voltages fed magnetic cores

NASA Astrophysics Data System (ADS)

Belgrand, Thierry; Lemaître, Régis; Benabou, Abdelkader; Blaszkowski, Jonathan; Wang, Chaoyong

2018-04-01

This paper reports on performances of high permeability grain oriented electrical steel when used in association with power electronic switching devices. Loss measurement results obtained from the Epstein test, using sinusoidal or various PWM voltages in medium frequency range, show that for both studied thicknesses (HGO 0.23mm and HGO 0.18mm), comparing performances at a fixed induction level between the various situations may not be the most convenient method. The effect of magnetic domain refinement has been investigated. After having shown the interest of lowering the thickness, an alternative way of looking at losses is proposed that may help to design the magnetic core when it comes to the matter of reducing size in considering frequency and magnetization levels.

Switch Detection in Preschoolers' Cognitive Flexibility

ERIC Educational Resources Information Center

Chevalier, Nicolas; Wiebe, Sandra A.; Huber, Kristina L.; Espy, Kimberly Andrews

2011-01-01

The current study addressed the role of switch detection in cognitive flexibility by testing the effect of transition cues (i.e., cues that directly signal the need to switch or maintain a given task goal) in a cued set-shifting paradigm at 5 years of age. Children performed better, especially on switch trials, when transition cues were combined…

High PRF high current switch

DOEpatents

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

Precision zero-home locator

DOEpatents

Stone, William J.

1986-01-01

A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

Precision zero-home locator

DOEpatents

Stone, W.J.

1983-10-31

A zero-home locator includes a fixed phototransistor switch and a moveable actuator including two symmetrical, opposed wedges, each wedge defining a point at which switching occurs. The zero-home location is the average of the positions of the points defined by the wedges.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, E.R.C. da; Filho, B.J.C.

This paper presents a PWM current clamping circuit for improving a series resonant DC link converter. This circuit is capable of reducing current peaks to about 1.2--1.4 times the DC bias current. When desired, resonant transition creates notches in the dc link current, allowing the converter`s switches to synchronize with external PWM strategy. A regulated DC current source may be obtained--by using a conventional rectifier source--to feed a DC load or a current source inverter. Phase plane approach makes ease the understanding the operation, control and design procedure of the circuit. Another topology is derived and its features compared tomore » the first circuit. Simulation results for the simplified circuit and for a three-phase induction motor driven by such inverter will be presented. Moreover, the principle is corroborated by experimental results.« less

Research on the Control Strategy for Grid-side Converter of PWM Doubly Fed Induction Wind Power Generators

NASA Astrophysics Data System (ADS)

Liu, Yifang; Wang, Zhijie; Li, Renfu; Jiang, Xiuchen; Sheng, Gehao; Liu, Tianyu; Liu, Sanming

2017-05-01

When the grid voltage drop, over current of transient rotor and over voltage may damage the power electronic devices. The attenuation of electromagnetic torque will lead to speed up. This paper proposes an improved feed-forward control strategy and its application in the PWM converter. When the PWM converter on voltage drops, bus voltage will be more stable. So over current problems of the DFIG rotor side can be reduced, and it also can improve voltage regulation speed of the DC bus voltage and reduce the oscillation amplitude. Furthermore, the stability of doubly fed wind generator system can be improved. The simulation results verify the validity of the modified control strategy.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

High accuracy switched-current circuits using an improved dynamic mirror

NASA Technical Reports Server (NTRS)

Zweigle, G.; Fiez, T.

1991-01-01

The switched-current technique, a recently developed circuit approach to analog signal processing, has emerged as an alternative/compliment to the well established switched-capacitor circuit technique. High speed switched-current circuits offer potential cost and power savings over slower switched-capacitor circuits. Accuracy improvements are a primary concern at this stage in the development of the switched-current technique. Use of the dynamic current mirror has produced circuits that are insensitive to transistor matching errors. The dynamic current mirror has been limited by other sources of error including clock-feedthrough and voltage transient errors. In this paper we present an improved switched-current building block using the dynamic current mirror. Utilizing current feedback the errors due to current imbalance in the dynamic current mirror are reduced. Simulations indicate that this feedback can reduce total harmonic distortion by as much as 9 dB. Additionally, we have developed a clock-feedthrough reduction scheme for which simulations reveal a potential 10 dB total harmonic distortion improvement. The clock-feedthrough reduction scheme also significantly reduces offset errors and allows for cancellation with a constant current source. Experimental results confirm the simulated improvements.

Position control of an electro-pneumatic system based on PWM technique and FLC.

PubMed

Najjari, Behrouz; Barakati, S Masoud; Mohammadi, Ali; Futohi, Muhammad J; Bostanian, Muhammad

2014-03-01

In this paper, modeling and PWM based control of an electro-pneumatic system, including the four 2-2 valves and a double acting cylinder are studied. Dynamic nonlinear behavior of the system, containing fast switching solenoid valves and a pneumatic cylinder, as well as electrical, magnetic, mechanical, and fluid subsystems are modeled. A DC-DC power converter is employed to improve solenoid valve performance and suppress system delay. Among different position control methods, a proportional integrator derivative (PID) controller and fuzzy logic controller (FLC) are evaluated. An experimental setup, using an AVR microcontroller is implemented. Simulation and experimental results verify the effectiveness of the proposed control strategies. Copyright © 2014 ISA. Published by Elsevier Ltd. All rights reserved.

Optically induced metal-to-dielectric transition in Epsilon-Near-Zero metamaterials

PubMed Central

Kaipurath, R. M.; Pietrzyk, M.; Caspani, L.; Roger, T.; Clerici, M.; Rizza, C.; Ciattoni, A.; Di Falco, A.; Faccio, D.

2016-01-01

Epsilon-Near-Zero materials exhibit a transition in the real part of the dielectric permittivity from positive to negative value as a function of wavelength. Here we study metal-dielectric layered metamaterials in the homogenised regime (each layer has strongly subwavelength thickness) with zero real part of the permittivity in the near-infrared region. By optically pumping the metamaterial we experimentally show that close to the Epsilon-Near-Zero (ENZ) wavelength the permittivity exhibits a marked transition from metallic (negative permittivity) to dielectric (positive permittivity) as a function of the optical power. Remarkably, this transition is linear as a function of pump power and occurs on time scales of the order of the 100 fs pump pulse that need not be tuned to a specific wavelength. The linearity of the permittivity increase allows us to express the response of the metamaterial in terms of a standard third order optical nonlinearity: this shows a clear inversion of the roles of the real and imaginary parts in crossing the ENZ wavelength, further supporting an optically induced change in the physical behaviour of the metamaterial. PMID:27292270

100-GHz Phase Switch/Mixer Containing a Slot-Line Transition

NASA Technical Reports Server (NTRS)

Gaier, Todd; Wells, Mary; Dawson, Douglas

2009-01-01

A circuit that can function as a phase switch, frequency mixer, or frequency multiplier operates over a broad frequency range in the vicinity of 100 GHz. Among the most notable features of this circuit is a grounded uniplanar transition (in effect, a balun) between a slot line and one of two coplanar waveguides (CPWs). The design of this circuit is well suited to integration of the circuit into a microwave monolithic integrated circuit (MMIC) package. One CPW is located at the input end and one at the output end of the top side of a substrate on which the circuit is fabricated (see Figure 1). The input CPW feeds the input signal to antiparallel flip-chip Schottky diodes connected to the edges of the slot line. Phase switching is effected by the combination of (1) the abrupt transition from the input CPW to the slot line and (2) CPW ground tuning effected by switching of the bias on the diodes. Grounding of the slot metal to the bottom metal gives rise to a frequency cutoff in the slot. This cutoff is valuable for separating different frequency components when the circuit is used as a mixer or multiplier. Proceeding along the slot line toward the output end, one encounters the aforementioned transition, which couples the slot line to the output CPW. Impedance tuning of the transition is accomplished by use of a high-impedance section immediately before the transition.

High Current, Multi-Filament Photoconductive Semiconductor Switching

DTIC Science & Technology

2011-06-01

linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

Photon-detections via probing the switching current shifts of Josephson junctions

NASA Astrophysics Data System (ADS)

Wang, Yiwen; Zhou, Pinjia; Wei, Lianfu; Zhang, Beihong; Wei, Qiang; Zhai, Jiquan; Xu, Weiwei; Cao, Chunhai

2015-08-01

Phenomenally, Cooper pairs can be broken up by external energy and thus the Cooper-pair density in the superconducting electrodes of a Josephson junction (JJ) under radiation can be lowered accordingly. Therefore, by probing the shift of the switching current through the junction, the radiation power absorbed by the superconductors can be detected. Here, we experimentally demonstrate weak optical detections in two types of JJs: Al/AlOx/Al junction (Al-J) and Nb/AlOx/Nb junction (Nb-J), with the superconducting transition temperatures Tc ≈ 1.2K and 6.8 K respectively. The photon-induced switching current shifts are measured at ultra-low temperature (T ≈ 16mK) in order to significantly suppress thermal noises. It is observed that the Al-J has a higher sensitivity than the Nb-J, which is expected since Al has a smaller superconducting gap energy than Nb. The minimum detectable optical powers (at 1550 nm) with the present Al-J and Nb-J are measured as 8 pW and 2 nW respectively, and the noise equivalent power (NEP) are estimated to be 7 ×10-11W /√{ Hz } (for Nb-J) and 3 ×10-12W /√{ Hz } (for Al-J). We also find that the observed switching current responses are dominated by the photon-induced thermal effects. Several methods are proposed to further improve the device sensitivity, so that the JJ based devices can be applicable in photon detections.

Performance of dual inverter fed open end winding induction motor drive using carrier shift PWM techniques

NASA Astrophysics Data System (ADS)

Priya Darshini, B.; Ranjit, M.; Babu, V. Ramesh

2018-04-01

In this paper different Multicarrier PWM (MCPWM) techniques are proposed for dual inverter fed open end induction motor (IM) drive to achieve multilevel operation. To generate the switching pulses for the dual inverter sinusoidal modulating signal is compared with multi carrier signals. A common mode voltage (CMV) has been analyzed in the proposed open end winding induction motor drive. All the proposed techniques mitigate the CMV along with the harmonic distortion in the phase voltage. To authenticate the proposed work several simulation techniques have been carried out using MATLAB/SIMULINK and the corresponding results are presented and compared.

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2016-08-01

A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting path, the sharp reset switching, which requires a high reset power (>7 mW), was observed, whereas for a high LRS with small multiple-conducting paths, the step-by-step reset switching with a low reset power (<7 mW) was observed. The attainment of higher nonlinear current-voltage ( I-V) characteristics in terms of the step-by-step reset switching is due to the steep current-increased region of the trap-controlled space charge-limited current (SCLC) model. A multilevel cell (MLC) operation, for which the reset stop voltage ( V STOP) is used in the DC sweep mode and an incremental amplitude is used in the pulse mode for the step-by-step reset switching, is demonstrated here. The results of the present study suggest that well-controlled conducting paths in a SiN-based RRAM device, which are not too strong and not too weak, offer considerable potential for the realization of low-power and high-density crossbar-array applications.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Gate-tunable current partition in graphene-based topological zero lines

NASA Astrophysics Data System (ADS)

Wang, Ke; Ren, Yafei; Deng, Xinzhou; Yang, Shengyuan A.; Jung, Jeil; Qiao, Zhenhua

2017-06-01

We demonstrate new mechanisms for gate-tunable current partition at topological zero-line intersections in a graphene-based current splitter. Based on numerical calculations of the nonequilibrium Green's functions and Landauer-Büttiker formula, we show that the presence of a perpendicular magnetic field on the order of a few Teslas allows for carrier sign dependent current routing. In the zero-field limit the control on current routing and partition can be achieved within a range of 10-90 % of the total incoming current by tuning the carrier density at tilted intersections or by modifying the relative magnitude of the bulk band gaps via gate voltage. We discuss the implications of our findings in the design of topological zero-line networks where finite orbital magnetic moments are expected when the current partition is asymmetric.

Push-pull switching power amplifier

NASA Technical Reports Server (NTRS)

Cuk, Slobodan M. (Inventor)

1980-01-01

A true push-pull switching power amplifier is disclosed utilizing two dc-to-dc converters. Each converter is comprised of two inductances, one inductance in series with a DC source and the other inductor in series with the output load, and an electrical energy transferring device with storage capability, namely storage capacitance, with suitable switching means between the inductances to obtain DC level conversion, where the switching means allows bidirectional current (and power) flow, and the switching means of one dc-to-dc converter is driven by the complement of a square-wave switching signal for the other dc-to-dc converter for true push-pull operation. For reduction of current ripple, the inductances in each of the two converters may be coupled, and with proper design of the coupling, the ripple can be reduced to zero at either the input or the output, but preferably the output.

Signatures of a macroscopic switching transition for a dynamic microtubule

NASA Astrophysics Data System (ADS)

Aparna, J. S.; Padinhateeri, Ranjith; Das, Dibyendu

2017-04-01

Characterising complex kinetics of non-equilibrium self-assembly of bio-filaments is of general interest. Dynamic instability in microtubules, consisting of successive catastrophes and rescues, is observed to occur as a result of the non-equilibrium conversion of GTP-tubulin to GDP-tubulin. We study this phenomenon using a model for microtubule kinetics with GTP/GDP state-dependent polymerisation, depolymerisation and hydrolysis of subunits. Our results reveal a sharp switch-like transition in the mean velocity of the filaments, from a growth phase to a shrinkage phase, with an associated co-existence of the two phases. This transition is reminiscent of the discontinuous phase transition across the liquid-gas boundary. We probe the extent of discontinuity in the transition quantitatively using characteristic signatures such as bimodality in velocity distribution, variance and Binder cumulant, and also hysteresis behaviour of the system. We further investigate ageing behaviour in catastrophes of the filament, and find that the multi-step nature of catastrophes is intensified in the vicinity of the switching transition. This assumes importance in the context of Microtubule Associated Proteins which have the potential of altering kinetic parameter values.

Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

NASA Astrophysics Data System (ADS)

Kurt, Huseyin

2005-08-01

We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers. We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss. We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface. We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer. In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces. Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices. While

Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films.

PubMed

Niroui, Farnaz; Wang, Annie I; Sletten, Ellen M; Song, Yi; Kong, Jing; Yablonovitch, Eli; Swager, Timothy M; Lang, Jeffrey H; Bulović, Vladimir

2015-08-25

Abrupt switching behavior and near-zero leakage current of nanoelectromechanical (NEM) switches are advantageous properties through which NEMs can outperform conventional semiconductor electrical switches. To date, however, typical NEMs structures require high actuation voltages and can prematurely fail through permanent adhesion (defined as stiction) of device components. To overcome these challenges, in the present work we propose a NEM switch, termed a "squitch," which is designed to electromechanically modulate the tunneling current through a nanometer-scale gap defined by an organic molecular film sandwiched between two electrodes. When voltage is applied across the electrodes, the generated electrostatic force compresses the sandwiched molecular layer, thereby reducing the tunneling gap and causing an exponential increase in the current through the device. The presence of the molecular layer avoids direct contact of the electrodes during the switching process. Furthermore, as the layer is compressed, the increasing surface adhesion forces are balanced by the elastic restoring force of the deformed molecules which can promote zero net stiction and recoverable switching. Through numerical analysis, we demonstrate the potential of optimizing squitch design to enable large on-off ratios beyond 6 orders of magnitude with operation in the sub-1 V regime and with nanoseconds switching times. Our preliminary experimental results based on metal-molecule-graphene devices suggest the feasibility of the proposed tunneling switching mechanism. With optimization of device design and material engineering, squitches can give rise to a broad range of low-power electronic applications.

Switching dynamics of TaOx-based threshold switching devices

NASA Astrophysics Data System (ADS)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

Solar power generation system for reducing leakage current

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Hung, Chih-Yi

2018-04-01

This paper proposes a transformer-less multi-level solar power generation system. This solar power generation system is composed of a solar cell array, a boost power converter, an isolation switch set and a full-bridge inverter. A unipolar pulse-width modulation (PWM) strategy is used in the full-bridge inverter to attenuate the output ripple current. Circuit isolation is accomplished by integrating the isolation switch set between the solar cell array and the utility, to suppress the leakage current. The isolation switch set also determines the DC bus voltage for the full-bridge inverter connecting to the solar cell array or the output of the boost power converter. Accordingly, the proposed transformer-less multi-level solar power generation system generates a five-level voltage, and the partial power of the solar cell array is also converted to AC power using only the full-bridge inverter, so the power efficiency is increased. A prototype is developed to validate the performance of the proposed transformer-less multi-level solar power generation system.

A Solution-Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon-Near-Zero Medium.

PubMed

Guo, Qiangbing; Cui, Yudong; Yao, Yunhua; Ye, Yuting; Yang, Yue; Liu, Xueming; Zhang, Shian; Liu, Xiaofeng; Qiu, Jianrong; Hosono, Hideo

2017-07-01

All the optical properties of materials are derived from dielectric function. In spectral region where the dielectric permittivity approaches zero, known as epsilon-near-zero (ENZ) region, the propagating light within the material attains a very high phase velocity, and meanwhile the material exhibits strong optical nonlinearity. The interplay between the linear and nonlinear optical response in these materials thus offers unprecedented pathways for all-optical control and device design. Here the authors demonstrate ultrafast all-optical modulation based on a typical ENZ material of indium tin oxide (ITO) nanocrystals (NCs), accessed by a wet-chemistry route. In the ENZ region, the authors find that the optical response in these ITO NCs is associated with a strong nonlinear character, exhibiting sub-picosecond response time (corresponding to frequencies over 2 THz) and modulation depth up to ≈160%. This large optical nonlinearity benefits from the highly confined geometry in addition to the ENZ enhancement effect of the ITO NCs. Based on these ENZ NCs, the authors successfully demonstrate a fiber optical switch that allows switching of continuous laser wave into femtosecond laser pulses. Combined with facile processibility and tunable optical properties, these solution-processed ENZ NCs may offer a scalable and printable material solution for dynamic photonic and optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

NASA Astrophysics Data System (ADS)

Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

2018-03-01

An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

BRIEF COMMUNICATIONS: Q switching of a resonator by the metal-semiconductor phase transition

NASA Astrophysics Data System (ADS)

Bugaev, A. A.; Zakharchenya, Boris P.; Chudnovskiĭ, F. A.

1981-12-01

An experimental study was made of Q switching in a resonator by a mirror with a nonlinear reflection coefficient. This mirror was an interference reflecting structure containing a vanadium oxide film capable of undergoing a metal-semiconductor transition. The nonlinearity of the reflection coefficient was due to initiation of this phase transition by laser radiation. A determination was made of the parameters of a giant radiation pulse obtained using such a passive switch with a vanadium oxide film.

Enhancement of macroscopic quantum tunneling in the higher-order phase switches of Bi2212 intrinsic Josephson junctions

NASA Astrophysics Data System (ADS)

Kitano, Haruhisa; Yamaguchi, Ayami; Takahashi, Yusaku; Umegai, Shunpei; Watabe, Yuji; Ohnuma, Haruka; Hosaka, Kazutaka; Kakehi, Daiki

2018-03-01

The macroscopic quantum tunneling (MQT) in the current-biased intrinsic Josephson junctions (IJJs) of high-T c cuprates has attracted much attention for decades. Although the MQT for the phase switches from the zero to the first voltage state (1st SW) in the multiple-branched I-V curves is well explained by the conventional theory, the occurrence of MQT for the higher order switches such as the switch from the 1st to 2nd voltage state (2nd SW) has been still debated. Here, we present an experimental study on the phase switches of small IJJs fabricated from underdoped Bi2Sr2(Ca,Y)Cu2Oy. We observed the single photon transition between quantized energy levels in the 3rd phase switches at 59.15 GHz and 2 K. The comparison with the previous studies on the nearly optimal-doped Bi2Sr2CaCu2Oy clearly suggests a possibility that the MQT rate for the higher-order phase switches is commonly enhanced by the effective suppression of the energy barrier for the higher-order phase escape due to the phase-running state after the 1st SW, in spite of the large difference in a critical current density and T c.

Inverter Output Filter Effect on PWM Motor Drives of a Flywheel Energy Storage System

NASA Technical Reports Server (NTRS)

Santiago, Walter

2004-01-01

NASA Glenn Research Center (GRC) has been involved in the research and development of high speed flywheel systems for small satellite energy storage and attitude control applications. One research and development area has been the minimization of the switching noise produced by the pulsed width modulated (PWM) inverter that drives the flywheel permanent magnet motor/generator (PM M/G). This noise can interfere with the flywheel M/G hardware and the system avionics hampering the full speed performance of the flywheel system. One way to attenuate the inverter switching noise is by placing an AC filter at the three phase output terminals of the inverter with the filter neutral point connected to the DC link (DC bus) midpoint capacitors. The main benefit of using an AC filter in this fashion is the significant reduction of the inverter s high dv/dt switching and its harmonics components. Additionally, common mode (CM) and differential mode (DM) voltages caused by the inverter s high dv/dt switching are also reduced. Several topologies of AC filters have been implemented and compared. One AC filter topology consists of a two-stage R-L-C low pass filter. The other topology consists of the same two-stage R-L-C low pass filter with a series connected trap filter (an inductor and capacitor connected in parallel). This paper presents the analysis, design and experimental results of these AC filter topologies and the comparison between the no filter case and conventional AC filter.

Temperature Prediction in High Speed Bone Grinding using Motor PWM Signal

PubMed Central

Tai, Bruce L.; Zhang, Lihui; Wang, Anthony C.; Sullivan, Stephen; Wang, Guangjun; Shih, Albert J.

2013-01-01

This research explores the feasibility of using motor electrical feedback to estimate temperature rise during a surgical bone grinding procedure. High-speed bone grinding is often used during skull base neurosurgery to remove cranial bone and approach skull base tumors through the nasal corridor. Grinding-induced heat could propagate and potentially injure surrounding nerves and arteries, and therefore, predicting the temperature in the grinding region would benefit neurosurgeons during the operation. High-speed electric motors are controlled by pulse-width-modulation (PWM) to alter the current input and thus maintain the rotational speed. Assuming full mechanical to thermal power conversion in the grinding process, PWM can be used as feedback for heat generation and temperature prediction. In this study, the conversion model was established from experiments under a variety of grinding conditions and an inverse heat transfer method to determine heat flux. Given a constant rotational speed, the heat conversion was represented by a linear function, and could predict temperature from the experimental data with less than 20% errors. Such results support the advance of this technology for practical application. PMID:23806419

Fast and efficient STT switching in MTJ using additional transient pulse current

NASA Astrophysics Data System (ADS)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

PHz current switching in calcium fluoride single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Ojoon; Kim, D., E-mail: kimd@postech.ac.kr; Max Planck Center for Attosecond Science, Max Planck POSTECH/Korea Res. Init., Pohang 37673

2016-05-09

We demonstrate that a current can be induced and switched in a sub-femtosecond time-scale in an insulating calcium fluoride single crystal by an intense optical field. This measurement indicates that a sizable current can be generated and also controlled by an optical field in a dielectric medium, implying the capability of rapid current switching at a rate of optical frequency, PHz (10{sup 15} Hz), which is a couple of orders of magnitude higher than that of contemporary electronic signal processing. This demonstration may serve to facilitate the development of ultrafast devices in PHz frequency.

A High Power Density Single-Phase PWM Rectifier with Active Ripple Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ning, Puqi; Wang, Ruxi; Wang, Fei

It is well known that there exist second-order harmonic current and corresponding ripple voltage on dc bus for single phase PWM rectifiers. The low frequency harmonic current is normally filtered using a bulk capacitor in the bus which results in low power density. This paper proposed an active ripple energy storage method that can effectively reduce the energy storage capacitance. The feed-forward control method and design considerations are provided. Simulation and 15 kW experimental results are provided for verification purposes.

Class E/F switching power amplifiers

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Aoki, Ichiro (Inventor); Rutledge, David B. (Inventor); Kee, Scott David (Inventor)

2004-01-01

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

On the use of the energy probability distribution zeros in the study of phase transitions

NASA Astrophysics Data System (ADS)

Mól, L. A. S.; Rodrigues, R. G. M.; Stancioli, R. A.; Rocha, J. C. S.; Costa, B. V.

2018-04-01

This contribution is devoted to cover some technical aspects related to the use of the recently proposed energy probability distribution zeros in the study of phase transitions. This method is based on the partial knowledge of the partition function zeros and has been shown to be extremely efficient to precisely locate phase transition temperatures. It is based on an iterative method in such a way that the transition temperature can be approached at will. The iterative method will be detailed and some convergence issues that has been observed in its application to the 2D Ising model and to an artificial spin ice model will be shown, together with ways to circumvent them.

Temperature prediction in high speed bone grinding using motor PWM signal.

PubMed

Tai, Bruce L; Zhang, Lihui; Wang, Anthony C; Sullivan, Stephen; Wang, Guangjun; Shih, Albert J

2013-10-01

This research explores the feasibility of using motor electrical feedback to estimate temperature rise during a surgical bone grinding procedure. High-speed bone grinding is often used during skull base neurosurgery to remove cranial bone and approach skull base tumors through the nasal corridor. Grinding-induced heat could propagate and potentially injure surrounding nerves and arteries, and therefore, predicting the temperature in the grinding region would benefit neurosurgeons during the operation. High-speed electric motors are controlled by pulse-width-modulation (PWM) to alter the current input and thus maintain the rotational speed. Assuming full mechanical to thermal power conversion in the grinding process, PWM can be used as feedback for heat generation and temperature prediction. In this study, the conversion model was established from experiments under a variety of grinding conditions and an inverse heat transfer method to determine heat flux. Given a constant rotational speed, the heat conversion was represented by a linear function, and could predict temperature from the experimental data with less than 20% errors. Such results support the advance of this technology for practical application. Copyright © 2013 IPEM. Published by Elsevier Ltd. All rights reserved.

Prognostic health monitoring in switch-mode power supplies with voltage regulation

NASA Technical Reports Server (NTRS)

Hofmeister, James P (Inventor); Judkins, Justin B (Inventor)

2009-01-01

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

Impact analysis of tap switch out of step for converter transformer

NASA Astrophysics Data System (ADS)

Hong-yue, ZHANG; Zhen-hua, ZHANG; Zhang-xue, XIONG; Gao-wang, YU

2017-06-01

AC transformer load regulation is mainly used to adjust the load side voltage level, improve the quality of power supply, the voltage range is relatively narrow. In DC system, converter transformer is the core equipment of AC and DC power converter and inverter. converter transformer tap adjustment can maintain the normal operation of the converter in small angle range control, the absorption of reactive power, economic operation, valve less stress, valve damping circuit loss, AC / DC harmonic component is also smaller. In this way, the tap switch action is more frequent, and a large range of the tap switch adjustment is required. Converter transformer with a more load voltage regulation switch, the voltage regulation range of the switch is generally 20~30%, the adjustment of each file is 1%~2%. Recently it is often found that the tap switch of Converter Transformers is out of step in Converter station. In this paper, it is analyzed in detail the impact of tap switch out of step for differential protection, overexcitation protection and zero sequence over current protection. Analysis results show that: the tap switch out of step has no effect on the differential protection and the overexcitation protection including the tap switch. But the tap switch out of step has effect on zero sequence overcurrent protection of out of step star-angle converter transformer. The zero sequence overcurrent protection will trip when the tap switch out of step is greater than 3 for out of step star-angle converter transformer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jacobina, C.B.; Silva, E.R.C. da; Lima, A.M.N.

This paper investigates the PWM operation of a four switch three phase inverter (FSTPI), in the case of digital implementation. Different switching sequence strategies for vector control are described and a digital scalar method is also presented. The influence of different switching patterns on the output voltage symmetry, current waveform and switching frequency are examined. The results obtained by employing the vector and scalar strategies are compared and a relationship between them is established. This comparison is based on analytical study and is corroborated either by the computer simulations and by the experimental results. The vector approach makes ease themore » understanding and analysis of the FSTPI, as well the choice of a PWM pattern. However, similar results may be obtained through the scalar approach, which has a simpler implementation. The experimental results of the use of the FSTPI and digital PWM to control an induction motor are presented.« less

Zero field reversal probability in thermally assisted magnetization reversal

NASA Astrophysics Data System (ADS)

Prasetya, E. B.; Utari; Purnama, B.

2017-11-01

This paper discussed about zero field reversal probability in thermally assisted magnetization reversal (TAMR). Appearance of reversal probability in zero field investigated through micromagnetic simulation by solving stochastic Landau-Lifshitz-Gibert (LLG). The perpendicularly anisotropy magnetic dot of 50×50×20 nm3 is considered as single cell magnetic storage of magnetic random acces memory (MRAM). Thermally assisted magnetization reversal was performed by cooling writing process from near/almost Curie point to room temperature on 20 times runs for different randomly magnetized state. The results show that the probability reversal under zero magnetic field decreased with the increase of the energy barrier. The zero-field probability switching of 55% attained for energy barrier of 60 k B T and the reversal probability become zero noted at energy barrier of 2348 k B T. The higest zero-field switching probability of 55% attained for energy barrier of 60 k B T which corespond to magnetif field of 150 Oe for switching.

Magnification of signatures of a topological phase transition by quantum zero point motion

NASA Astrophysics Data System (ADS)

Lopes, Pedro L. e. S.; Ghaemi, Pouyan

2015-08-01

We show that the zero point motion of a vortex in superconducting doped topological insulators leads to significant changes in the electronic spectrum at the topological phase transition in this system. This topological phase transition is tuned by the doping level, and the corresponding effects are manifest in the density of states at energies which are on the order of the vortex fluctuation frequency. Although the electronic energy gap in the spectrum generated by a stationary vortex is but a small fraction of the bulk superconducting gap, the vortex fluctuation frequency may be much larger. As a result, this quantum zero point motion can induce a discontinuous change in the spectral features of the system at the topological vortex phase transition to energies which are well within the resolution of scanning tunneling microscopy. This discontinuous change is exclusive to superconducting systems in which we have a topological phase transition. Moreover, the phenomena studied in this paper present effects of Magnus forces on the vortex spectrum which are not present in the ordinary s -wave superconductors. Finally, we demonstrate explicitly that the vortex in this system is equivalent to a Kitaev chain. This allows for the mapping of the vortex fluctuating scenario in three dimensions into similar one-dimensional situations in which one may search for other novel signatures of topological phase transitions.

Zener diode controls switching of large direct currents

NASA Technical Reports Server (NTRS)

1965-01-01

High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

Energy Switching Threshold for Climatic Benefits

NASA Astrophysics Data System (ADS)

Zhang, X.; Cao, L.; Caldeira, K.

2013-12-01

Climate change is one of the great challenges facing humanity currently and in the future. Its most severe impacts may still be avoided if efforts are made to transform current energy systems (1). A transition from the global system of high Greenhouse Gas (GHG) emission electricity generation to low GHG emission energy technologies is required to mitigate climate change (2). Natural gas is increasingly seen as a choice for transitions to renewable sources. However, recent researches in energy and climate puzzled about the climate implications of relying more energy on natural gas. On one hand, a shift to natural gas is promoted as climate mitigation because it has lower carbon per unit energy than coal (3). On the other hand, the effect of switching to natural gas on nuclear-power and other renewable energies development may offset benefits from fuel-switching (4). Cheap natural gas is causing both coal plants and nuclear plants to close in the US. The objective of this study is to measure and evaluate the threshold of energy switching for climatic benefits. We hypothesized that the threshold ratio of energy switching for climatic benefits is related to GHGs emission factors of energy technologies, but the relation is not linear. A model was developed to study the fuel switching threshold for greenhouse gas emission reduction, and transition from coal and nuclear electricity generation to natural gas electricity generation was analyzed as a case study. The results showed that: (i) the threshold ratio of multi-energy switching for climatic benefits changes with GHGs emission factors of energy technologies. (ii)The mathematical relation between the threshold ratio of energy switching and GHGs emission factors of energies is a curved surface function. (iii) The analysis of energy switching threshold for climatic benefits can be used for energy and climate policy decision support.

Vibration and acoustic noise emitted by dry-type air-core reactors under PWM voltage excitation

NASA Astrophysics Data System (ADS)

Li, Jingsong; Wang, Shanming; Hong, Jianfeng; Yang, Zhanlu; Jiang, Shengqian; Xia, Shichong

2018-05-01

According to coupling way between the magnetic field and the structural order, structure mode is discussed by engaging finite element (FE) method and both natural frequency and modal shape for a dry-type air-core reactor (DAR) are obtained in this paper. On the basis of harmonic response analysis, electromagnetic force under PWM (Pulse Width Modulation) voltage excitation is mapped with the structure mesh, the vibration spectrum is gained and the consequences represents that the whole structure vibration predominates in the radial direction, with less axial vibration. Referring to the test standard of reactor noise, the rules of emitted noise of the DAR are measured and analyzed at chosen switching frequency matches the sample resonant frequency and the methods of active vibration and noise reduction are put forward. Finally, the low acoustic noise emission of a prototype DAR is verified by measurement.

An Energy Saving Green Plug Device for Nonlinear Loads

NASA Astrophysics Data System (ADS)

Bloul, Albe; Sharaf, Adel; El-Hawary, Mohamed

2018-03-01

The paper presents a low cost a FACTS Based flexible fuzzy logic based modulated/switched tuned arm filter and Green Plug compensation (SFC-GP) scheme for single-phase nonlinear loads ensuring both voltage stabilization and efficient energy utilization. The new Green Plug-Switched filter compensator SFC modulated LC-Filter PWM Switched Capacitive Compensation Devices is controlled using a fuzzy logic regulator to enhance power quality, improve power factor at the source and reduce switching transients and inrush current conditions as well harmonic contents in source current. The FACTS based SFC-GP Device is a member of family of Green Plug/Filters/Compensation Schemes used for efficient energy utilization, power quality enhancement and voltage/inrush current/soft starting control using a dynamic error driven fuzzy logic controller (FLC). The device with fuzzy logic controller is validated using the Matlab / Simulink Software Environment for enhanced power quality (PQ), improved power factor and reduced inrush currents. This is achieved using modulated PWM Switching of the Filter-Capacitive compensation scheme to cope with dynamic type nonlinear and inrush cyclical loads..

Fuzzy Logic Controlled Solar Module for Driving Three- Phase Induction Motor

NASA Astrophysics Data System (ADS)

Afiqah Zainal, Nurul; Sooi Tat, Chan; Ajisman

2016-02-01

Renewable energy produced by solar module gives advantages for generated three- phase induction motor in remote area. But, solar module's ou tput is uncertain and complex. Fuzzy logic controller is one of controllers that can handle non-linear system and maximum power of solar module. Fuzzy logic controller used for Maximum Power Point Tracking (MPPT) technique to control Pulse-Width Modulation (PWM) for switching power electronics circuit. DC-DC boost converter used to boost up photovoltaic voltage to desired output and supply voltage source inverter which controlled by three-phase PWM generated by microcontroller. IGBT switched Voltage source inverter (VSI) produced alternating current (AC) voltage from direct current (DC) source to control speed of three-phase induction motor from boost converter output. Results showed that, the output power of solar module is optimized and controlled by using fuzzy logic controller. Besides that, the three-phase induction motor can be drive and control using VSI switching by the PWM signal generated by the fuzzy logic controller. This concluded that the non-linear system can be controlled and used in driving three-phase induction motor.

Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com; Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260; Zeng, Hao

2015-06-15

Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using amore » shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.« less

Non-volatile, solid state bistable electrical switch

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor)

1994-01-01

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

NASA Astrophysics Data System (ADS)

Yang, Y. C.; Pan, F.; Zeng, F.; Liu, M.

2009-12-01

ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher Roff/Ron ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

Rotaxane liquid crystals with variable length: The effect of switching efficiency on the isotropic-nematic transition

NASA Astrophysics Data System (ADS)

He, Hao; Sevick, Edith M.; Williams, David R. M.

2018-04-01

We examine a solution of non-adaptive two-state rotaxane molecules which can switch from a short state of length L to a long state of length qL, using statistical thermodynamics. This molecular switching is externally driven and can result in an isotropic-nematic phase transition without altering temperature and concentration. Here we concentrate on the limitation imposed by switching inefficiency, i.e., on the case where molecular switching is not quantitative, leading to a solution of rotaxanes in different states. We present switching diagrams that can guide in the design of rotaxanes which affect a macroscopic phase change.

Couette-Poiseuille flow experiment with zero mean advection velocity: Subcritical transition to turbulence

NASA Astrophysics Data System (ADS)

Klotz, L.; Lemoult, G.; Frontczak, I.; Tuckerman, L. S.; Wesfreid, J. E.

2017-04-01

We present an experimental setup that creates a shear flow with zero mean advection velocity achieved by counterbalancing the nonzero streamwise pressure gradient by moving boundaries, which generates plane Couette-Poiseuille flow. We obtain experimental results in the transitional regime for this flow. Using flow visualization, we characterize the subcritical transition to turbulence in Couette-Poiseuille flow and show the existence of turbulent spots generated by a permanent perturbation. Due to the zero mean advection velocity of the base profile, these turbulent structures are nearly stationary. We distinguish two regions of the turbulent spot: the active turbulent core, which is characterized by waviness of the streaks similar to traveling waves, and the surrounding region, which includes in addition the weak undisturbed streaks and oblique waves at the laminar-turbulent interface. We also study the dependence of the size of these two regions on Reynolds number. Finally, we show that the traveling waves move in the downstream (Poiseuille) direction.

Highly Sensitive and Wide-Dynamic-Range Multichannel Optical-Fiber pH Sensor Based on PWM Technique.

PubMed

Khan, Md Rajibur Rahaman; Kang, Shin-Won

2016-11-09

In this study, we propose a highly sensitive multichannel pH sensor that is based on an optical-fiber pulse width modulation (PWM) technique. According to the optical-fiber PWM method, the received sensing signal's pulse width changes when the optical-fiber pH sensing-element of the array comes into contact with pH buffer solutions. The proposed optical-fiber PWM pH-sensing system offers a linear sensing response over a wide range of pH values from 2 to 12, with a high pH-sensing ability. The sensitivity of the proposed pH sensor is 0.46 µs/pH, and the correlation coefficient R² is approximately 0.997. Additional advantages of the proposed optical-fiber PWM pH sensor include a short/fast response-time of about 8 s, good reproducibility properties with a relative standard deviation (RSD) of about 0.019, easy fabrication, low cost, small size, reusability of the optical-fiber sensing-element, and the capability of remote sensing. Finally, the performance of the proposed PWM pH sensor was compared with that of potentiometric, optical-fiber modal interferometer, and optical-fiber Fabry-Perot interferometer pH sensors with respect to dynamic range width, linearity as well as response and recovery times. We observed that the proposed sensing systems have better sensing abilities than the above-mentioned pH sensors.

Highly Sensitive and Wide-Dynamic-Range Multichannel Optical-Fiber pH Sensor Based on PWM Technique

PubMed Central

Khan, Md. Rajibur Rahaman; Kang, Shin-Won

2016-01-01

In this study, we propose a highly sensitive multichannel pH sensor that is based on an optical-fiber pulse width modulation (PWM) technique. According to the optical-fiber PWM method, the received sensing signal’s pulse width changes when the optical-fiber pH sensing-element of the array comes into contact with pH buffer solutions. The proposed optical-fiber PWM pH-sensing system offers a linear sensing response over a wide range of pH values from 2 to 12, with a high pH-sensing ability. The sensitivity of the proposed pH sensor is 0.46 µs/pH, and the correlation coefficient R2 is approximately 0.997. Additional advantages of the proposed optical-fiber PWM pH sensor include a short/fast response-time of about 8 s, good reproducibility properties with a relative standard deviation (RSD) of about 0.019, easy fabrication, low cost, small size, reusability of the optical-fiber sensing-element, and the capability of remote sensing. Finally, the performance of the proposed PWM pH sensor was compared with that of potentiometric, optical-fiber modal interferometer, and optical-fiber Fabry–Perot interferometer pH sensors with respect to dynamic range width, linearity as well as response and recovery times. We observed that the proposed sensing systems have better sensing abilities than the above-mentioned pH sensors. PMID:27834865

49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

49 CFR 213.235 - Inspection of switches, track crossings, and lift rail assemblies or other transition devices on...

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Inspection of switches, track crossings, and lift... TRANSPORTATION TRACK SAFETY STANDARDS Inspection § 213.235 Inspection of switches, track crossings, and lift rail... section, each switch, turnout, track crossing, and moveable bridge lift rail assembly or other transition...

Quench dynamics in superconducting nanojunctions: Metastability and dynamical Yang-Lee zeros

NASA Astrophysics Data System (ADS)

Souto, R. Seoane; Martín-Rodero, A.; Yeyati, A. Levy

2017-10-01

We study the charge transfer dynamics following the formation of a phase or voltage biased superconducting nanojunction using a full counting statistics analysis. We demonstrate that the evolution of the zeros of the generating function allows one to identify the population of different many body states much in the same way as the accumulation of Yang-Lee zeros of the partition function in equilibrium statistical mechanics is connected to phase transitions. We give an exact expression connecting the dynamical zeros to the charge transfer cumulants and discuss when an approximation based on "dominant" zeros is valid. We show that, for generic values of the parameters, the system gets trapped into a metastable state characterized by a nonequilibrium population of the many body states which is dependent on the initial conditions. We study in particular the effect of the switching rates in the dynamics showing that, in contrast to intuition, the deviation from thermal equilibrium increases for the slower rates. In the voltage biased case the steady state is reached independent of the initial conditions. Our method allows us to obtain accurate results for the steady state current and noise in quantitative agreement with steady state methods developed to describe the multiple Andreev reflections regime. Finally, we discuss the system dynamics after a sudden voltage drop showing the possibility of tuning the many body states population by an appropriate choice of the initial voltage, providing a feasible experimental way to access the quench dynamics and control the state of the system.

Current-induced switching of magnetic molecules on topological insulator surfaces

NASA Astrophysics Data System (ADS)

Locane, Elina; Brouwer, Piet W.

2017-03-01

Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

Characterisation of the current switch mechanism in two-stage wire array Z-pinches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burdiak, G. C.; Lebedev, S. V.; Harvey-Thompson, A. J.

2015-11-15

In this paper, we describe the operation of a two-stage wire array z-pinch driven by the 1.4 MA, 240 ns rise-time Magpie pulsed-power device at Imperial College London. In this setup, an inverse wire array acts as a fast current switch, delivering a current pre-pulse into a cylindrical load wire array, before rapidly switching the majority of the generator current into the load after a 100–150 ns dwell time. A detailed analysis of the evolution of the load array during the pre-pulse is presented. Measurements of the load resistivity and energy deposition suggest significant bulk heating of the array mass occurs. Themore » ∼5 kA pre-pulse delivers ∼0.8 J of energy to the load, leaving it in a mixed, predominantly liquid-vapour state. The main current switch occurs as the inverse array begins to explode and plasma expands into the load region. Electrical and imaging diagnostics indicate that the main current switch may evolve in part as a plasma flow switch, driven by the expansion of a magnetic cavity and plasma bubble along the length of the load array. Analysis of implosion trajectories suggests that approximately 1 MA switches into the load in 100 ns, corresponding to a doubling of the generator dI/dt. Potential scaling of the device to higher current machines is discussed.« less

Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akyol, Mustafa; Department of Physics, University of Çukurova, Adana 01330; Yu, Guoqiang

2015-04-20

We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeBmore » layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (−14.12 Oe/10{sup 7} A cm{sup −2}) was found to be almost 13× larger than that in Hf|CoFeB|TaO{sub x} (−1.05 Oe/10{sup 7} A cm{sup −2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting  H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.« less

The Relationship between the Current Waveform just before the Current Zero and the Interruption Ability in the High-speed VCB

NASA Astrophysics Data System (ADS)

Niwa, Yoshimitsu; Matsuzaki, Jun; Yokokura, Kunio

The high-speed vacuum circuit breaker, which forced the fault current to zero was investigated. The test circuit breaker consisted of a vacuum interrupter and a high frequency current source. The vacuum interrupter, which had the axial magnetic field electrode and the disk shape electrode, was tested. The arcing period of the high-speed vacuum circuit breaker is much shorter than that of conventional circuit breaker. The arc behavior of the test electrodes immediately after the contact separation was observed by a high-speed video camcorder. The relation between the current waveform just before the current zero and the interruption ability by varying the high frequency current source was investigated experimentally. The results demonstrate the interruption ability and the arc behavior of the high-speed vacuum circuit breaker. The high current interruption was made possible by the low current period just before the current zero, although the arcing time is short and the arc is concentrated.

Caracterisation des mecanismes d'usure en cavitation de revetements HVOF a base de CaviTec

NASA Astrophysics Data System (ADS)

Lavigne, Sebastien

The increasing demand for high performance power conversion systems continuously pushes for improvement in efficiency and power density. This dissertation focuses on a topological effort to efficiently utilize the active and passive devices. In particular, a hybrid approach is adopted, where both capacitors and inductors are used in the voltage conversion and power transfer process. Conventional capacitor-based converters, called switched-capacitor (SC) converters, suffer from poor efficiency due to the inevitable charge redistribution process. With a strategic placement of one or more inductors, the charge redistribution loss can be eliminated by inductively charging/discharging the capacitors, a process called soft-charging operation. As a result, the capacitor size can be greatly reduced without reducing the efficiency. A general analytical framework is presented, which determines whether an arbitrary SC topology is able to achieve full soft-charging operation with a single inductor. For topologies that cannot, a split-phase control technique is introduced, which amends existing two-phase controls to completely eliminate the charge redistribution loss. In addition, alternative placements of inductors are explored to extend the family of hybrid converters. The hybrid converters can have two modes of operation, the fixed-ratio mode and pulse width modulated (PWM) mode. The fixed-conversion-ratio hybrid converters operate in a similar manner to that of a conventional SC converter, with the addition of a soft-charging inductor. The switching frequency of such converters can be adjusted to operate in either zero current switching (ZCS) mode or continuous conduction mode (CCM), which allows for the trade-off of switching loss and conduction loss. It is shown that the capacitor and inductor values can be selected to achieve a minimal passive component volume, which can be significantly smaller than that of a conventional SC converter or a magnetic-based converter. On

Switch over to the high frequency rf systems near transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brennan, J.M.; Wei, J.

1988-01-01

The purpose of this note is to point out that since bunch narrowing naturally occurs in the acceleration process in the vicinity of transition, it should be possible to switch over to the high frequency system close to transition when the bunch has narrowed enough to fit directly into the high frequency bucket. The advantage of this approach is the simplicity, no extra components or gymnastics are required of the low frequency system. The disadvantage, of course, is for protons which do not go through transition. But on the other hand, there is no shortage of intensity for protons andmore » so it should be possible to keep the phase space area low for protons, and then matching to the high frequency bucket should be easily accomplished by adiabatic compression. 3 refs., 7 figs.« less

Reversible switching of fluorophore property based on intrinsic conformational transition of adenylate kinase during its catalytic cycle.

PubMed

Fujii, Akira; Hirota, Shun; Matsuo, Takashi

2013-07-17

Adenylate kinase shows a conformational transition (OPEN and CLOSED forms) during substrate binding and product release to mediate the phosphoryl transfer between ADP and ATP/AMP. The protein motional characteristics will be useful to construct switching systems of fluorophore properties caused by the catalytic cycle of the enzyme. This paper demonstrates in situ reversible switching of a fluorophore property driven by the conformational transition of the enzyme. The pyrene-conjugated mutant adenylate kinase is able to switch the monomer/excimer emission property of pyrene on addition of ADP or P(1)P(5)-di(adenosine-5')pentaphosphate (Ap5A, a transition state analog). The observation under the dilute condition (~0.1 μM) indicates that the emission spectral change was caused by the motion of a protein molecule and not led by protein-protein interactions through π-π stacking of pyrene rings. The switching can be reversibly conducted by using hexokinase-coupling reaction. The fashion of the changes in emission intensities at various ligand concentrations is different between ADP, Mg(2+)-bound ADP, and Mg(2+)-bound Ap5A. The emission property switching is repeatable by a sequential addition of a substrate in a one-pot process. It is proposed that the property of a synthetic molecule on the enzyme surface is switchable in response to the catalytic cycle of adenylate kinase.

Giant thermal spin torque assisted magnetic tunnel junction switching

NASA Astrophysics Data System (ADS)

Pushp, Aakash

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

High-Yield, Zero-Leakage Expression System with a Translational Switch Using Site-Specific Unnatural Amino Acid Incorporation

PubMed Central

Minaba, Masaomi

2014-01-01

Synthetic biologists construct complex biological circuits by combinations of various genetic parts. Many genetic parts that are orthogonal to one another and are independent of existing cellular processes would be ideal for use in synthetic biology. However, our toolbox is still limited with respect to the bacterium Escherichia coli, which is important for both research and industrial use. The site-specific incorporation of unnatural amino acids is a technique that incorporates unnatural amino acids into proteins using a modified exogenous aminoacyl-tRNA synthetase/tRNA pair that is orthogonal to any native pairs in a host and is independent from other cellular functions. Focusing on the orthogonality and independency that are suitable for the genetic parts, we designed novel AND gate and translational switches using the unnatural amino acid 3-iodo-l-tyrosine incorporation system in E. coli. A translational switch was turned on after addition of 3-iodo-l-tyrosine in the culture medium within minutes and allowed tuning of switchability and translational efficiency. As an application, we also constructed a gene expression system that produced large amounts of proteins under induction conditions and exhibited zero-leakage expression under repression conditions. Similar translational switches are expected to be applicable also for eukaryotes such as yeasts, nematodes, insects, mammalian cells, and plants. PMID:24375139

Electrically controlled optical latch and switch requires less current

NASA Technical Reports Server (NTRS)

Pieczonka, W. A.; Roy, M. M.; Yeh, T. H.

1966-01-01

Electrically controlled optical latch consists of a sensitive phototransistor and a solid-state light source. This design requires less current to activate an optically activated switch than in prior art.

On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.

Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

Bi-Frequency Modulated Quasi-Resonant Converters: Theory and Applications

NASA Astrophysics Data System (ADS)

Zhang, Yuefeng

1995-01-01

To avoid the variable frequency operation of quasi -resonant converters, many soft-switching PWM converters have been proposed, all of them require an auxiliary switch, which will increase the cost and complexity of the power supply system. In this thesis, a new kind of technique for quasi -resonant converters has been proposed, which is called the bi-frequency modulation technique. By operating the quasi-resonant converters at two switching frequencies, this technique enables quasi-resonant converters to achieve the soft-switching, at fixed switching frequencies, without an auxiliary switch. The steady-state analysis of four commonly used quasi-resonant converters, namely, ZVS buck, ZCS buck, ZVS boost, and ZCS boost converter has been presented. Using the concepts of equivalent sources, equivalent sinks, and resonant tank, the large signal models of these four quasi -resonant converters were developed. Based on these models, the steady-state control characteristics of BFM ZVS buck, BFM ZCS buck, BFM ZVS boost, and BFM ZCS boost converter have been derived. The functional block and design consideration of the bi-frequency controller were presented, and one of the implementations of the bi-frequency controller was given. A complete design example has been presented. Both computer simulations and experimental results have verified that the bi-frequency modulated quasi-resonant converters can achieve soft-switching, at fixed switching frequencies, without an auxiliary switch. One of the application of bi-frequency modulation technique is for EMI reduction. The basic principle of using BFM technique for EMI reduction was introduced. Based on the spectral analysis, the EMI performances of the PWM, variable-frequency, and bi-frequency modulated control signals was evaluated, and the BFM control signals show the lowest EMI emission. The bi-frequency modulated technique has also been applied to the power factor correction. A BFM zero -current switching boost converter has

Spin-Hall Switching of In-plane Exchange Biased Heterostructures

NASA Astrophysics Data System (ADS)

Mann, Maxwell; Beach, Geoffrey

The spin Hall effect (SHE) in heavy-metal/ferromagnet bilayers generates a pure transverse spin current from in-plane charge current, allowing for efficient switching of spintronic devices with perpendicular magnetic anisotropy. Here, we demonstrate that an AFM deposited adjacent to the FM establishes a large in-plane exchange bias field, allowing operation at zero HIP. We sputtered Pt(3nm)/Co(0.9nm)/Ni80Co20O(tAF) stacks at room-temperature in an in-plane magnetic field of 3 kOe. The current-induced effective field was estimated in Hall cross devices by measuring the variation of the out-of-plane switching field as a function of JIP and HIP. The spin torque efficiency, dHSL/dJIP, is measured versus HIP for a sample with tAF =30 nm, and for a control in which NiCoO is replaced by TaOx. In the latter, dHSL/dJIP varied linearly with HIP. In the former, dHSL/dJIP varied nonlinearly with HIP and exhibited an offset indicating nonzero spin torque efficiency with zero HIP. The magnitude of HEB was 600 Oe in-plane.

Reusable fast opening switch

DOEpatents

Van Devender, John P.; Emin, David

1986-01-01

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Reusable fast opening switch

DOEpatents

Van Devender, J.P.; Emin, D.

1983-12-21

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Manually operated coded switch

DOEpatents

Barnette, Jon H.

1978-01-01

The disclosure relates to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made.

Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aravinthan, D.; Daniel, M.; Sabareesan, P.

The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device frommore » 67 ps to 48 ps for an applied current density of 4 × 10{sup 12}Am{sup −2}. Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10{sup 12}Am{sup −2} to 1.39 × 10{sup 12}Am{sup −2}.« less

Temperature-Triggered Dielectric-Optical Duple Switch Based on an Organic-Inorganic Hybrid Phase Transition Crystal: [C5N2H16]2SbBr5.

PubMed

Mao, Chen-Yu; Liao, Wei-Qiang; Wang, Zhong-Xia; Zafar, Zainab; Li, Peng-Fei; Lv, Xing-Hui; Fu, Da-Wei

2016-08-01

Molecular optical-electrical duple switches (switch "ON" and "OFF" bistable states) represent a class of highly desirable intelligent materials because of their sensitive switchable physical and/or chemical responses, simple and environmentally friendly processing, light weights, and mechanical flexibility. In the current work, the phase transition of 1 (general formula R2MX5, [C5N2H16]2[SbBr5]) can be triggered by the order-disorder transition of the organic cations at 278.3 K. The temperature-induced phase transition causes novel bistable optical-electrical duple characteristics, which indicates that 1 might be an excellent candidate for a potential switchable optical-electrical (fluorescence/dielectric) material. In the dielectric measurements, remarkable bistable dielectric responses were detected, accompanied by striking anisotropy along various crystallographic axes. For the intriguing fluorescence emission spectra, the intensity and position changed significantly with the occurrence of the structural phase transition. We believe that these findings might further promote the application of halogenoantimonates(III) and halogenobismuthates(III) in the field of optoelectronic multifunctional devices.

Current-induced switching in a magnetic insulator

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

NASA Astrophysics Data System (ADS)

Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

2016-11-01

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

PubMed

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor

NASA Astrophysics Data System (ADS)

Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J.; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

2017-12-01

We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr2VO3FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C4 (2 ×2 ) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C4 (2 ×2 ) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C4 state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

Double Current Sheet Instabilities and the Transition to Turbulence.

NASA Astrophysics Data System (ADS)

Pucci, F.; Velli, M.; Biferale, L.; Sahoo, G.

2016-12-01

The double tearing instability has often been studied as a proxy for the m=1 kink mode in cylindrical plasma. In this paper we describe the results of 3D simulations of an initially periodic double current sheet described by Harris equilibria with a guide field in two cases: 1) zero net helicity and an average magnetic field and 2) a well defined helicity (force free but non constant alpha). We study and contrast the de-stabilization and transition to turbulence for these two cases: we describe spectra, cascades, and possible application to heliospheric phenomena, in particular CME evolution and relaxation. The research leading to these results has received fund- ing from the European Union's Seventh Framework Pro- gramme (FP7/2007-2013) under grant agreement No. 339032

Breakdown of the Migdal approximation at Lifshitz transitions with giant zero-point motion in the H3S superconductor.

PubMed

Jarlborg, Thomas; Bianconi, Antonio

2016-04-20

While 203 K high temperature superconductivity in H3S has been interpreted by BCS theory in the dirty limit here we focus on the effects of hydrogen zero-point-motion and the multiband electronic structure relevant for multigap superconductivity near Lifshitz transitions. We describe how the topology of the Fermi surfaces evolves with pressure giving different Lifshitz-transitions. A neck-disrupting Lifshitz-transition (type 2) occurs where the van Hove singularity, vHs, crosses the chemical potential at 210 GPa and new small 2D Fermi surface portions appear with slow Fermi velocity where the Migdal-approximation becomes questionable. We show that the neglected hydrogen zero-point motion ZPM, plays a key role at Lifshitz transitions. It induces an energy shift of about 600 meV of the vHs. The other Lifshitz-transition (of type 1) for the appearing of a new Fermi surface occurs at 130 GPa where new Fermi surfaces appear at the Γ point of the Brillouin zone here the Migdal-approximation breaks down and the zero-point-motion induces large fluctuations. The maximum Tc = 203 K occurs at 160 GPa where EF/ω0 = 1 in the small Fermi surface pocket at Γ. A Feshbach-like resonance between a possible BEC-BCS condensate at Γ and the BCS condensate in different k-space spots is proposed.

Quantum phase transition modulation in an atomtronic Mott switch

NASA Astrophysics Data System (ADS)

McLain, Marie A.; Carr, Lincoln D.

2018-07-01

Mott insulators provide stable quantum states and long coherence times due to small number fluctuations, making them good candidates for quantum memory and atomic circuits. We propose a proof-of-principle for a 1D Mott switch using an ultracold Bose gas and optical lattice. With time-evolving block decimation simulations—efficient matrix product state methods—we design a means for transient parameter characterization via a local excitation for ease of engineering into more complex atomtronics. We perform the switch operation by tuning the intensity of the optical lattice, and thus the interaction strength through a conductance transition due to the confined modifications of the ‘wedding cake’ Mott structure. We demonstrate the time-dependence of Fock state transmission and fidelity of the excitation as a means of tuning up the device in a double well and as a measure of noise performance. Two-point correlations via the g (2) measure provide additional information regarding superfluid fragments on the Mott insulating background due to the confinement of the potential.

Experimental analysis of the boundary layer transition with zero and positive pressure gradient

NASA Technical Reports Server (NTRS)

Arnal, D.; Jullen, J. C.; Michel, R.

1980-01-01

The influence of a positive pressure gradient on the boundary layer transition is studied. The mean velocity and turbulence profiles of four cases are examined. As the intensity of the pressure gradient is increased, the Reynolds number of the transition onset and the length of the transition region are reduced. The Tollmein-Schlichting waves disturb the laminar regime; the amplification of these waves is in good agreement with the stability theory. The three dimensional deformation of the waves leads finally to the appearance of turbulence. In the case of zero pressure gradient, the properties of the turbulent spots are studied by conditional sampling of the hot-wire signal; in the case of positive pressure gradient, the turbulence appears in a progressive manner and the turbulent spots are much more difficult to characterize.

Electrical switching in cadmium boracite single crystals

NASA Technical Reports Server (NTRS)

Takahashi, T.; Yamada, O.

1981-01-01

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Thermal conductivity switch: Optimal semiconductor/metal melting transition

NASA Astrophysics Data System (ADS)

Kim, Kwangnam; Kaviany, Massoud

2016-10-01

Scrutinizing distinct solid/liquid (s /l ) and solid/solid (s /s ) phase transitions (passive transitions) for large change in bulk (and homogenous) thermal conductivity, we find the s /l semiconductor/metal (S/M) transition produces the largest dimensionless thermal conductivity switch (TCS) figure of merit ZTCS (change in thermal conductivity divided by smaller conductivity). At melting temperature, the solid phonon and liquid molecular thermal conductivities are comparable and generally small, so the TCS requires localized electron solid and delocalized electron liquid states. For cyclic phase reversibility, the congruent phase transition (no change in composition) is as important as the thermal transport. We identify X Sb and X As (X =Al , Cd, Ga, In, Zn) and describe atomic-structural metrics for large ZTCS, then show the superiority of S/M phonon- to electron-dominated transport melting transition. We use existing experimental results and theoretical and ab initio calculations of the related properties for both phases (including the Kubo-Greenwood and Bridgman formulations of liquid conductivities). The 5 p orbital of Sb contributes to the semiconductor behavior in the solid-phase band gap and upon disorder and bond-length changes in the liquid phase this changes to metallic, creating the large contrast in thermal conductivity. The charge density distribution, electronic localization function, and electron density of states are used to mark this S/M transition. For optimal TCS, we examine the elemental selection from the transition, basic, and semimetals and semiconductor groups. For CdSb, addition of residual Ag suppresses the bipolar conductivity and its ZTCS is over 7, and for Zn3Sb2 it is expected to be over 14, based on the structure and transport properties of the better-known β -Zn4Sb3 . This is the highest ZTCS identified. In addition to the metallic melting, the high ZTCS is due to the electron-poor nature of II-V semiconductors, leading to the

Research on Parallel Three Phase PWM Converters base on RTDS

NASA Astrophysics Data System (ADS)

Xia, Yan; Zou, Jianxiao; Li, Kai; Liu, Jingbo; Tian, Jun

2018-01-01

Converters parallel operation can increase capacity of the system, but it may lead to potential zero-sequence circulating current, so the control of circulating current was an important goal in the design of parallel inverters. In this paper, the Real Time Digital Simulator (RTDS) is used to model the converters parallel system in real time and study the circulating current restraining. The equivalent model of two parallel converters and zero-sequence circulating current(ZSCC) were established and analyzed, then a strategy using variable zero vector control was proposed to suppress the circulating current. For two parallel modular converters, hardware-in-the-loop(HIL) study based on RTDS and practical experiment were implemented, results prove that the proposed control strategy is feasible and effective.

Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.

PubMed

Lee, Chanwoo; Kim, Inpyo; Choi, Wonsup; Shin, Hyunjung; Cho, Jinhan

2009-04-21

We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO2 film by thermal annealing. A top electrode (Ag electrode) was then coated onto the TiO2 films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (about 0.6 VRESET and 1.4 VSET). In addition, it was confirmed that the electrical properties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to those of vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. The reported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devices allowing a facile solution processing.

Permanent Magnet Synchronous Motor Driven by PWM Inverter with Voltage Booster with Regenerating Capability Augmented by Double-Layer Capacitor

NASA Astrophysics Data System (ADS)

Yamamoto, Kichiro; Shinohara, Katsuji; Furukawa, Shinya

An interior permanent magnet (IPM) motor drive system which has regenerating capability augmented by double-layer capacitors is proposed. The motor is driven by a PWM inverter with voltage booster. The voltage booster is used to control the dc link voltage in high speed region to improve the system efficiency. Furthermore, the double-layer capacitor as a storage element is combined with the PWM inverter with voltage booster to gain the efficiency for the regenerating operation. In this system, normally, the regenerative power does not return to a battery directly but is stored in the double-layer capacitors for the next motoring action to suppress the excessive regenerative current to battery, and the regenerative power returns to the battery when the regenerative energy is larger than a certain value. The charging current to the battery is controlled to a constant value to extend the life-time of the battery. The transient and steady state characteristics of the system for 1.5kW IPM motor are investigated by both simulation and experiment. Finally, the effectiveness of the system is demonstrated by the simulated and experimental results.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

Full-switching FSF-type superconducting spin-triplet magnetic random access memory element

NASA Astrophysics Data System (ADS)

Lenk, D.; Morari, R.; Zdravkov, V. I.; Ullrich, A.; Khaydukov, Yu.; Obermeier, G.; Müller, C.; Sidorenko, A. S.; von Nidda, H.-A. Krug; Horn, S.; Tagirov, L. R.; Tidecks, R.

2017-11-01

In the present work a superconducting Co/CoOx/Cu41Ni59 /Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field applied parallel to the film plane. In more detail, around zero applied field, Tc is lower when the field is changed from negative to positive polarity (with respect to the cooling field), compared to the opposite case. We interpret this finding as the result of the generation of the odd-in-frequency triplet component of superconductivity arising at noncollinear orientation of the magnetizations in the Cu41Ni59 layer adjacent to the CoOx layer. This interpretation is supported by superconducting quantum interference device magnetometry, which revealed a correlation between details of the magnetic structure and the observed superconducting spin-valve effects. Readout of information is possible at zero applied field and, thus, no permanent field is required to stabilize both states. Consequently, this system represents a superconducting magnetic random access memory element for superconducting electronics. By applying increased transport currents, the system can be driven to the full switching mode between the completely superconducting and the normal state.

Electronic transport properties of a quinone-based molecular switch

NASA Astrophysics Data System (ADS)

Zheng, Ya-Peng; Bian, Bao-An; Yuan, Pei-Pei

2016-09-01

In this paper, we carried out first-principles calculations based on density functional theory and non-equilibrium Green's function to investigate the electronic transport properties of a quinone-based molecule sandwiched between two Au electrodes. The molecular switch can be reversibly switched between the reduced hydroquinone (HQ) and oxidized quinone (Q) states via redox reactions. The switching behavior of two forms is analyzed through their I- V curves, transmission spectra and molecular projected self-consistent Hamiltonian at zero bias. Then we discuss the transmission spectra of the HQ and Q forms at different bias, and explain the oscillation of current according to the transmission eigenstates of LUMO energy level for Q form. The results suggest that this kind of a quinone-based molecule is usable as one of the good candidates for redox-controlled molecular switches.

HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

DOEpatents

Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

1962-04-17

A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

System and method for determining stator winding resistance in an AC motor using motor drives

DOEpatents

Lu, Bin; Habetler, Thomas G; Zhang, Pinjia

2013-02-26

A system and method for determining the stator winding resistance of AC motors is provided. The system includes an AC motor drive having an input connectable to an AC source and an output connectable to an input terminal of an AC motor, a pulse width modulation (PWM) converter having switches therein to control current flow and terminal voltages in the AC motor, and a control system connected to the PWM converter. The control system generates a command signal to cause the PWM converter to control an output of the AC motor drive corresponding to an input to the AC motor, selectively generates a modified command signal to cause the PWM converter to inject a DC signal into the output of the AC motor drive, and determines a stator winding resistance of the AC motor based on the DC signal of at least one of the voltage and current.

A graphite based STT-RAM cell with reduction in switching current

NASA Astrophysics Data System (ADS)

Varghani, Ali; Peiravi, Ali

2015-10-01

Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for "universal memory" because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 μA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF).

The theory and implementation of a high quality pulse width modulated waveform synthesiser applicable to voltage FED inverters

NASA Astrophysics Data System (ADS)

Lower, Kim Nigel

1985-03-01

Modulation processes associated with the digital implementation of pulse width modulation (PWM) switching strategies were examined. A software package based on a portable turnkey structure is presented. Waveform synthesizer implementation techniques are reviewed. A three phase PWM waveform synthesizer for voltage fed inverters was realized. It is based on a constant carrier frequency of 18 kHz and a regular sample, single edge, asynchronous PWM switching scheme. With high carrier frequencies, it is possible to utilize simple switching strategies and as a consequence, many advantages are highlighted, emphasizing the importance to industrial and office markets.

Inverting Quasi-Resonant Switched-Capacitor Bidirectional Converter and Its Application to Battery Equalization

NASA Astrophysics Data System (ADS)

Lee, Yuang-Shung; Chiu, Yin-Yuan; Cheng, Ming-Wang; Ko, Yi-Pin; Hsiao, Sung-Hsin

The proposed quasi-resonant (QR) zero current switching (ZCS) switched-capacitor (SC) converter is a new type of bidirectional power flow control conversion scheme. The proposed converter is able to provide voltage conversion ratios from -3/-{1 \\over 3} (triple-mode/trisection-mode) to -n/-{1 \\over n} (-n-mode/-{1 \\over n}-mode) by adding a different number of switched-capacitors and power MOSFET switches with a small series connected resonant inductor for forward and reverse power flow control schemes. It possesses the advantages of low switching losses and current stress in this QR ZCS SC converter. The principle of operation, theoretical analysis of the proposed triple-mode/trisection-mode bidirectional power conversion scheme is described in detail with circuit model analysis. Simulation and experimental studies are carried out to verify the performance of the proposed inverting type ZCS SC QR bidirectional converter. The proposed converters can be applied to battery equalization for battery management system (BMS).

Spin-selective coupling to Majorana zero modes in mixed singlet and triplet superconducting nanowires

NASA Astrophysics Data System (ADS)

Paul, Ganesh C.; Saha, Arijit; Das, Sourin

2018-05-01

We theoretically investigate the transport properties of a quasi-one-dimensional ferromagnet-superconductor junction where the superconductor consists of mixed singlet and triplet pairings. We show that the relative orientation of the Stoner field (h ˜) in the ferromagnetic lead and the d vector of the superconductor acts like a on-off switch for the zero bias conductance of the device. In the regime, where triplet pairing amplitude dominates over the singlet counterpart (topological phase), a pair of Majorana zero modes appear at each end of the superconducting part of the nanowire. When h ˜ is parallel or antiparallel to the d vector, transport gets completely blocked due to blockage in pairing while, when h ˜ and d are perpendicular to each other, the zero energy two terminal differential conductance spectra exhibits sharp transition from 4 e2/h to 2 e2/h as the magnetization strength in the lead becomes larger than the chemical potential indicating the spin-selective coupling of a pair of Majorana zero modes to the lead.

Switch Detection in Preschoolers’ Cognitive Flexibility

PubMed Central

Chevalier, Nicolas; Wiebe, Sandra A.; Huber, Kristina L.; Espy, Kimberly Andrews

2011-01-01

The present study addressed the role of switch detection in cognitive flexibility by testing the effect of transition cues (i.e., cues that directly signal the need to switch or maintain a given task goal) in a cued set-shifting paradigm at age 5. Children performed better, especially on switch trials, when transition cues were combined with traditional task cues (i.e., cues that directly signal the relevant task on a given trial), relative to conditions without transition cues. This effect was not influenced by explicit knowledge of transition cues or transition cue transparency, suggesting transition cues did not need to be semantically processed to be beneficial. These findings reveal that young children’s difficulties in set-shifting situations partially stem from failures to monitor for the need to switch. PMID:21353678

Operation of a voltage source converter at increased utility voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaura, V.; Blasko, V.

1997-01-01

The operation of a voltage source converter (VSC) with regeneration capability, controllable power factor, and low distortion of utility currents is analyzed at increased utility voltage. Increase in the utility voltage causes a VSC to saturate and enter a nonlinear mode of operation. To operate under elevated utility, two steps are taken: (1) a pulse width modulation (PWM) algorithm is implemented which extends the linear region of operation by 15% and (2) a PWM saturation regulator is used to control the reactive current at higher utility voltages. The PWM algorithm reduces the switching losses by at least 33% and themore » effect of blanking time by one-third. All analytical results are experimentally verified on a 100 kW three-phase VSC.« less

Contact effects in light activated GaAs switches

NASA Astrophysics Data System (ADS)

Durkin, P. S.

1985-05-01

The purpose of this work was to examine the effects of various types of contacts on the switching behavior of a light-triggered power switch. The switch was constructed from a homogeneous wafer of chromium-doped gallium arsenide; the contacts were either ohmic, non-ohmic, or Schottky barriers. These were formed on the wafer in two geometries; both contacts on one side, and one contact spacings were used to permit the effects of the location of the existing laser pulse to be studied. A high voltage power supply (zero to 20 kV) was employed as the bias supply. A Nd:YAG laser, in the pulsed mode, was used to trigger the switch, which was mounted on a cold finger cooled to near liquid nitrogen temperature. Cooling reduced the dark current to manageable values (less than 1 micro A), and also reduced the avalanche breakdown voltage. The results of the measurements indicate that ohmic contacts produced more reliable switching than the non-ohmic or Schottky contacts, in as much as the shape of the output current pulse was better, and the number of pulses which the switches could sustain before the pulse shape deteriorated was greater, for the ohmic contacts. Surface discharge between the one-sided contacts obscured any differences in switching characteristics which might have depended on the location of the pulsed light excitation, so that no correlation between position and behavior could be obtained.

Spin-orbit torque-induced switching in ferrimagnetic alloys: Experiments and modeling

NASA Astrophysics Data System (ADS)

Je, Soong-Geun; Rojas-Sánchez, Juan-Carlos; Pham, Thai Ha; Vallobra, Pierre; Malinowski, Gregory; Lacour, Daniel; Fache, Thibaud; Cyrille, Marie-Claire; Kim, Dae-Yun; Choe, Sug-Bong; Belmeguenai, Mohamed; Hehn, Michel; Mangin, Stéphane; Gaudin, Gilles; Boulle, Olivier

2018-02-01

We investigate spin-orbit torque (SOT)-induced switching in rare-earth-transition metal ferrimagnetic alloys using W/CoTb bilayers. The switching current is found to vary continuously with the alloy concentration, and no reduction in the switching current is observed at the magnetic compensation point despite a very large SOT efficiency. A model based on coupled Landau-Lifschitz-Gilbert (LLG) equations shows that the switching current density scales with the effective perpendicular anisotropy which does not exhibit strong reduction at the magnetic compensation, explaining the behavior of the switching current density. This model also suggests that conventional SOT effective field measurements do not allow one to conclude whether the spins are transferred to one sublattice or just simply to the net magnetization. The effective spin Hall angle measurement shows an enhancement of the spin Hall angle with the Tb concentration which suggests an additional SOT contribution from the rare earth Tb atoms.

Constant-current control method of multi-function electromagnetic transmitter.

PubMed

Xue, Kaichang; Zhou, Fengdao; Wang, Shuang; Lin, Jun

2015-02-01

Based on the requirements of controlled source audio-frequency magnetotelluric, DC resistivity, and induced polarization, a constant-current control method is proposed. Using the required current waveforms in prospecting as a standard, the causes of current waveform distortion and current waveform distortion's effects on prospecting are analyzed. A cascaded topology is adopted to achieve 40 kW constant-current transmitter. The responsive speed and precision are analyzed. According to the power circuit of the transmitting system, the circuit structure of the pulse width modulation (PWM) constant-current controller is designed. After establishing the power circuit model of the transmitting system and the PWM constant-current controller model, analyzing the influence of ripple current, and designing an open-loop transfer function according to the amplitude-frequency characteristic curves, the parameters of the PWM constant-current controller are determined. The open-loop transfer function indicates that the loop gain is no less than 28 dB below 160 Hz, which assures the responsive speed of the transmitting system; the phase margin is 45°, which assures the stabilization of the transmitting system. Experimental results verify that the proposed constant-current control method can keep the control error below 4% and can effectively suppress load change caused by the capacitance of earth load.

Constant-current control method of multi-function electromagnetic transmitter

NASA Astrophysics Data System (ADS)

Xue, Kaichang; Zhou, Fengdao; Wang, Shuang; Lin, Jun

2015-02-01

Based on the requirements of controlled source audio-frequency magnetotelluric, DC resistivity, and induced polarization, a constant-current control method is proposed. Using the required current waveforms in prospecting as a standard, the causes of current waveform distortion and current waveform distortion's effects on prospecting are analyzed. A cascaded topology is adopted to achieve 40 kW constant-current transmitter. The responsive speed and precision are analyzed. According to the power circuit of the transmitting system, the circuit structure of the pulse width modulation (PWM) constant-current controller is designed. After establishing the power circuit model of the transmitting system and the PWM constant-current controller model, analyzing the influence of ripple current, and designing an open-loop transfer function according to the amplitude-frequency characteristic curves, the parameters of the PWM constant-current controller are determined. The open-loop transfer function indicates that the loop gain is no less than 28 dB below 160 Hz, which assures the responsive speed of the transmitting system; the phase margin is 45°, which assures the stabilization of the transmitting system. Experimental results verify that the proposed constant-current control method can keep the control error below 4% and can effectively suppress load change caused by the capacitance of earth load.

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

NASA Astrophysics Data System (ADS)

Prarokijjak, Worasak; Soodchomshom, Bumned

2018-04-01

Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

View of the current distribution "bus" atop switching cabinets within ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of the current distribution "bus" atop switching cabinets within the former transformer building. Looking northwest - Childs-Irving Hydroelectric Project, Childs System, Childs Powerhouse, Forest Service Road 708/502, Camp Verde, Yavapai County, AZ

Controlled parity switch of persistent currents in quantum ladders

NASA Astrophysics Data System (ADS)

Filippone, Michele; Bardyn, Charles-Edouard; Giamarchi, Thierry

2018-05-01

We investigate the behavior of persistent currents for a fixed number of noninteracting fermions in a periodic quantum ladder threaded by Aharonov-Bohm and transverse magnetic fluxes Φ and χ . We show that the coupling between ladder legs provides a way to effectively change the ground-state fermion-number parity, by varying χ . Specifically, we demonstrate that varying χ by 2 π (one flux quantum) leads to an apparent fermion-number parity switch. We find that persistent currents exhibit a robust 4 π periodicity as a function of χ , despite the fact that χ →χ +2 π leads to modifications of order 1 /N of the energy spectrum, where N is the number of sites in each ladder leg. We show that these parity-switch and 4 π periodicity effects are robust with respect to temperature and disorder, and outline potential physical realizations using cold atomic gases and photonic lattices, for bosonic analogs of the effects.

AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster

NASA Astrophysics Data System (ADS)

Han, Sang-Woo; Jo, Min-Gi; Kim, Hyungtak; Cho, Chun-Hyung; Cha, Ho-Young

2017-08-01

This study investigates the effects of a monolithic gate current booster integrated with an AlGaN/GaN-on-Si power-switching device. The integrated gate current booster was implemented by a single-stage inverter topology consisting of a recessed normally-off AlGaN/GaN MOS-HFET and a mesa resistor. The monolithically integrated gate current booster in a switching FET eliminated the parasitic elements caused by external interconnection and enabled fast switching operation. The gate charging and discharging currents were boosted by the integrated inverter, which significantly reduced both rise and fall times: the rise time was reduced from 626 to 41.26 ns, while the fall time was reduced from 554 to 42.19 ns by the single-stage inverter. When the packaged monolithic power chip was tested under 1 MHz hard-switching operation with VDD = 200 V, the switching loss was found to have been drastically reduced, from 5.27 to 0.55 W.

Current polarity-dependent manipulation of antiferromagnetic domains

NASA Astrophysics Data System (ADS)

Wadley, Peter; Reimers, Sonka; Grzybowski, Michal J.; Andrews, Carl; Wang, Mu; Chauhan, Jasbinder S.; Gallagher, Bryan L.; Campion, Richard P.; Edmonds, Kevin W.; Dhesi, Sarnjeet S.; Maccherozzi, Francesco; Novak, Vit; Wunderlich, Joerg; Jungwirth, Tomas

2018-05-01

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields1. Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents2. In previous experiments, orthogonal in-plane current pulses were used to induce 90° rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry3. Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using X-ray magnetic linear dichroism microscopy, and can also be detected electrically. Switching by domain-wall motion can occur at much lower current densities than those needed for coherent domain switching.

Trajectory phase transitions and dynamical Lee-Yang zeros of the Glauber-Ising chain.

PubMed

Hickey, James M; Flindt, Christian; Garrahan, Juan P

2013-07-01

We examine the generating function of the time-integrated energy for the one-dimensional Glauber-Ising model. At long times, the generating function takes on a large-deviation form and the associated cumulant generating function has singularities corresponding to continuous trajectory (or "space-time") phase transitions between paramagnetic trajectories and ferromagnetically or antiferromagnetically ordered trajectories. In the thermodynamic limit, the singularities make up a whole curve of critical points in the complex plane of the counting field. We evaluate analytically the generating function by mapping the generator of the biased dynamics to a non-Hermitian Hamiltonian of an associated quantum spin chain. We relate the trajectory phase transitions to the high-order cumulants of the time-integrated energy which we use to extract the dynamical Lee-Yang zeros of the generating function. This approach offers the possibility to detect continuous trajectory phase transitions from the finite-time behavior of measurable quantities.

Electrical motor/generator drive apparatus and method

DOEpatents

Su, Gui Jia

2013-02-12

The present disclosure includes electrical motor/generator drive systems and methods that significantly reduce inverter direct-current (DC) bus ripple currents and thus the volume and cost of a capacitor. The drive methodology is based on a segmented drive system that does not add switches or passive components but involves reconfiguring inverter switches and motor stator winding connections in a way that allows the formation of multiple, independent drive units and the use of simple alternated switching and optimized Pulse Width Modulation (PWM) schemes to eliminate or significantly reduce the capacitor ripple current.

A new very high voltage semiconductor switch

NASA Technical Reports Server (NTRS)

Sundberg, G. R.

1985-01-01

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Suppression of TFT leakage current effect on active matrix displays by employing a new circular switch

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Hyun-Sang; Jeon, Jae-Hong; Han, Min-Koo

2008-03-01

We have proposed a new poly-Si TFT pixel, which can suppress TFT leakage current effect on active matrix organic diode (AMOLED) displays, by employing a new circular switching TFT and additional signal line for compensating the leakage current. When the leakage current of switching TFT is increased, the VGS of the current driving TFT in the proposed pixel is not altered by the variable data voltages due to the circular switching TFT. Our simulation results show that OLED current variation of the proposed pixel can be suppressed less than 3%, while that of conventional pixel exceeds 30%. The proposed pixel may be suitable to suppress the leakage current effect on AMOLED display.

Simulations of flow induced structural transition of the β-switch region of glycoprotein Ibα.

PubMed

Han, Mengzhi; Xu, Ji; Ren, Ying; Li, Jinghai

2016-02-01

Binding of glycoprotein Ibα to von Willebrand factor induces platelet adhesion to injured vessel walls and initiates a multistep hemostatic process. It has been hypothesized that the flow condition could induce a loop to β-sheet conformational change in the β-switch region of glycoprotein Ibα, which regulates it binding to the von Willebrand factor and facilitates the blood clot formation and wound healing. In this work, direct molecular dynamics (MD), flow MD and metadynamics, were employed to investigate the mechanisms of this flow induced conformational transition process. Specifically, the free energy landscape of the whole transition process was drawn by metadynamics with the path collective variable approach. The results reveal that without flow, the free energy landscape has two main basins, including a random loop basin stabilized by large conformational entropy and a partially folded β-sheet basin. The free energy barrier separating these two basins is relatively high and the β-switch could not fold from loop to β-sheet state spontaneously. The fully β-sheet conformations located in high free energy regions, which are also unstable and gradually unfold into partially folded β-sheet state with flow. Relatively weak flow could trigger some folding of the β-switch but could not fold it into fully β-sheet state. Under strong flow conditions, the β-switch could readily overcome the high free energy barrier and fold into fully β-sheet state. Copyright © 2015 Elsevier B.V. All rights reserved.

A Double-Pole High Voltage High Current Switch

DTIC Science & Technology

2005-12-01

NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited A DOUBLE- POLE HIGH...December 2005 3. REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE: A Double- Pole High Voltage High Current Switch 6. AUTHOR(S...to divert heavy charged particles, e.g. Cu+. 15. NUMBER OF PAGES 68 14. SUBJECT TERMS Double- Pole , Pulse Forming Inductive Network, PFIN

Superconducting Mercury-Based Cuprate Films with a Zero-Resistance Transition Temperature of 124 Kelvin

NASA Astrophysics Data System (ADS)

Tsuei, C. C.; Gupta, A.; Trafas, G.; Mitzi, D.

1994-03-01

The synthesis of high-quality films of the recently discovered mercury-based cuprate films with high transition temperatures has been plagued by problems such as the air sensitivity of the cuprate precursor and the volatility of Hg and HgO. These processing difficulties have been circumvented by a technique of atomic-scale mixing of the HgO and cuprate precursors, use of a protective cap layer, and annealing in an appropriate Hg and O_2 environment. With this procedure, a zero-resistance transition temperature as high as 124 kelvin in c axis-oriented epitaxial HgBa_2CaCu_2O6+δ films has been achieved.

Superconducting mercury-based cuprate films with a zero-resistance transition temperature of 124 Kelvin.

PubMed

Tsuei, C C; Gupta, A; Trafas, G; Mitzi, D

1994-03-04

The synthesis of high-quality films of the recently discovered mercury-based cuprate films with high transition temperatures has been plagued by problems such as the air sensitivity of the cuprate precursor and the volatility of Hg and HgO. These processing difficulties have been circumvented by a technique of atomic-scale mixing of the HgO and cuprate precursors, use of a protective cap layer, and annealing in an appropriate Hg and O(2) environment. With this procedure, a zero-resistance transition temperature as high as 124 kelvin in c axis-oriented epitaxial HgBa(2)CaCu(2)O(6+delta) films has been achieved.

Current-level triggered plasma-opening switch

DOEpatents

Mendel, Clifford W.

1989-01-01

An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

Sleep State Switching

PubMed Central

Saper, Clifford B.; Fuller, Patrick M.; Pedersen, Nigel P.; Lu, Jun; Scammell, Thomas E.

2010-01-01

We take for granted the ability to fall asleep or to snap out of sleep into wakefulness, but these changes in behavioral state require specific switching mechanisms in the brain that allow well-defined state transitions. In this review, we examine the basic circuitry underlying the regulation of sleep and wakefulness, and discuss a theoretical framework wherein the interactions between reciprocal neuronal circuits enable relatively rapid and complete state transitions. We also review how homeostatic, circadian, and allostatic drives help regulate sleep state switching, and discuss how breakdown of the switching mechanism may contribute to sleep disorders such as narcolepsy. PMID:21172606

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Rodriguez, Miguel; Sinha, Mohit

We present a decentralized control strategy that yields switch interleaving among parallel connected dc-dc buck converters without communication. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work represents the first fully decentralized strategy formore » switch interleaving of paralleled dc-dc buck converters.« less

Current-level triggered plasma-opening switch

DOEpatents

Mendel, C.W.

1987-06-29

An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

Zero bias thermally stimulated currents in synthetic diamond

NASA Astrophysics Data System (ADS)

Mori, R.; Miglio, S.; Bruzzi, M.; Bogani, F.; De Sio, A.; Pace, E.

2009-06-01

Zero bias thermally stimulated currents (ZBTSCs) have been observed in single crystal high pressure high temperature (HPHT) and polycrystalline chemical vapor deposited (pCVD) diamond films. The ZBTSC technique is characterized by an increased sensitivity with respect to a standard TSC analysis. Due to the absence of the thermally activated background current, new TSC peaks have been observed in both HPHT and pCVD diamond films, related to shallow activation energies usually obscured by the emission of the dominant impurities. The ZBTSC peaks are explained in terms of defect discharge in the nonequilibrium potential distribution created by a nonuniform traps filling at the metal-diamond junctions. The electric field due to the charged defects has been estimated in a quasizero bias TSC experiment by applying an external bias.

EVIDENCE OF MAGNETIC FIELD SWITCH-OFF IN COLLISIONLESS MAGNETIC RECONNECTION

DOE Office of Scientific and Technical Information (OSTI.GOV)

Innocenti, M. E.; Lapenta, G.; Goldman, M.

2015-09-10

The long-term evolution of large domain particle-in-cell simulations of collisionless magnetic reconnection is investigated following observations that show two possible outcomes for collisionless reconnection: toward a Petschek-like configuration or toward multiple X points. In the present simulation, a mixed scenario develops. At earlier time, plasmoids are emitted, disrupting the formation of Petschek-like structures. Later, an almost stationary monster plasmoid forms, preventing the emission of other plasmoids. A situation reminiscent of Petschek’s switch-off then ensues. Switch-off is obtained through a slow shock/rotational discontinuity compound structure. Two external slow shocks (SS) located at the separatrices reduce the in-plane tangential component of themore » magnetic field, but not to zero. Two transitions reminiscent of rotational discontinuities (RD) in the internal part of the exhaust then perform the final switch-off. Both the SS and the RD are characterized through analysis of their Rankine–Hugoniot jump conditions. A moderate guide field is used to suppress the development of the firehose instability in the exhaust.« less

Polarization and resistive switching behavior of ferroelectric tunnel junctions with transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Li, Tao; Lipatov, Alexey; Sharma, Pankaj; Lee, Hyungwoo; Eom, Chang-Beom; Sinitskii, Alexander; Gruverman, Alexei; Alexei Gruverman Team; Alexander Sinitskii Team; Chang-Beom Eom Team

Transition metal dichalcogenides (TMDs) are emerging 2-dimensional (2D) materials of the MX2 type, where M is a transition metal atom (Mo, W, Ti, Sn, Zr, etc.) and X is a chalcogen atom (S, Se, or Te.). Comparing to graphene, TMDs have a sizable band gap and can be metal, half-metal, semiconductor or superconductor. Their band structures can be tuned by external bias voltage, mechanical force, or light illumination. Their rich physical properties make TMDs potential candidates for a variety of applications in nanoelectronics and optoelectronics. Ferroelectric tunnel junctions (FTJs) are actively studied as a next-generation of non-volatile memory elements. An FTJ comprises a ferroelectric tunnel barrier sandwiched between two electrodes. In this work, we investigate the resistive switching behavior of MoS2/BaTiO3-based FTJs. The ON/OFF ratio can be modulated via electric or mechanical control of the switched polarization fraction opening a possibility of tunable electroresistance effect. Effect of optical illumination on the polarization reversal dynamics has been observed and analyzed based on the polarization-induced modulation of the MoS2 layered electronic properties.

Effect of biquadratic coupling on current induced magnetization switching in Co/Cu/Ni-Fe nanopillar

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aravinthan, D.; Daniel, M., E-mail: danielcnld@gmail.com; Sabareesan, P.

2016-05-23

The effect of biquadratic coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the free layer magnetization switching dynamics governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The LLGS equation is numerically solved by using Runge-Kutta fourth order procedure for an applied current density of 5 × 10{sup 12} Am{sup -2}. Presence of biquadratic coupling in the ferromagnetic layers reduces the magnetization switching time of the nanopillar device from 61 ps to 49 ps.

Eddy-current-damped microelectromechanical switch

DOEpatents

Christenson, Todd R.; Polosky, Marc A.

2007-10-30

A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

Eddy-current-damped microelectromechanical switch

DOEpatents

Christenson, Todd R [Albuquerque, NM; Polosky, Marc A [Tijeras, NM

2009-12-15

A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

General Strategy for Broadband Coherent Perfect Absorption and Multi-wavelength All-optical Switching Based on Epsilon-Near-Zero Multilayer Films

PubMed Central

Kim, Tae Young; Badsha, Md. Alamgir; Yoon, Junho; Lee, Seon Young; Jun, Young Chul; Hwangbo, Chang Kwon

2016-01-01

We propose a general, easy-to-implement scheme for broadband coherent perfect absorption (CPA) using epsilon-near-zero (ENZ) multilayer films. Specifically, we employ indium tin oxide (ITO) as a tunable ENZ material, and theoretically investigate CPA in the near-infrared region. We first derive general CPA conditions using the scattering matrix and the admittance matching methods. Then, by combining these two methods, we extract analytic expressions for all relevant parameters for CPA. Based on this theoretical framework, we proceed to study ENZ CPA in a single layer ITO film and apply it to all-optical switching. Finally, using an ITO multilayer of different ENZ wavelengths, we implement broadband ENZ CPA structures and investigate multi-wavelength all-optical switching in the technologically important telecommunication window. In our design, the admittance matching diagram was employed to graphically extract not only the structural parameters (the film thicknesses and incident angles), but also the input beam parameters (the irradiance ratio and phase difference between two input beams). We find that the multi-wavelength all-optical switching in our broadband ENZ CPA system can be fully controlled by the phase difference between two input beams. The simple but general design principles and analyses in this work can be widely used in various thin-film devices. PMID:26965195

Unravelling the switching mechanisms in electric field induced insulator-metal transitions in VO2 nanobeams

NASA Astrophysics Data System (ADS)

Rathi, Servin; Park, Jin-Hyung; Lee, In-yeal; Baik, Jeong Min; Yi, Kyung Soo; Kim, Gil-Ho

2014-07-01

We studied insulator-metal transitions in VO2 nanobeams for both abrupt and gradual changes in applied electric fields. Based on the observations, the Poole-Frenkel effect explained the abrupt transition, while the gradual case is found to be dominated by the Joule heating phenomenon. We also carried out power model and finite element method based simulations which supported the Joule heating phenomena for gradual transition. An in-principle demonstration of the Poole-Frenkel effect, performed using a square voltage pulse of 1 µs duration, further confirms the proposed insulator-metal transition mechanism with a switching time in the order of 100 ns. Finally, conductivity variations introduced via rapid thermal annealing at various temperatures validate the roles of both Joule heating and Poole-Frenkel mechanisms in the transitions.

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE PAGES

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.; ...

2017-10-06

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Sleep state switching.

PubMed

Saper, Clifford B; Fuller, Patrick M; Pedersen, Nigel P; Lu, Jun; Scammell, Thomas E

2010-12-22

We take for granted the ability to fall asleep or to snap out of sleep into wakefulness, but these changes in behavioral state require specific switching mechanisms in the brain that allow well-defined state transitions. In this review, we examine the basic circuitry underlying the regulation of sleep and wakefulness and discuss a theoretical framework wherein the interactions between reciprocal neuronal circuits enable relatively rapid and complete state transitions. We also review how homeostatic, circadian, and allostatic drives help regulate sleep state switching and discuss how breakdown of the switching mechanism may contribute to sleep disorders such as narcolepsy. Copyright © 2010 Elsevier Inc. All rights reserved.

Population Switching and Charge Sensing in Quantum Dots: A Case for a Quantum Phase Transition

NASA Astrophysics Data System (ADS)

Goldstein, Moshe; Berkovits, Richard; Gefen, Yuval

2010-06-01

A broad and a narrow level of a quantum dot connected to two external leads may swap their respective occupancies as a function of an external gate voltage. By mapping this problem onto a multiflavored Coulomb gas we show that such population switching is not abrupt. However, trying to measure it by adding a third electrostatically coupled lead may render this switching an abrupt first order quantum phase transition. This is related to the interplay of the Mahan mechanism versus the Anderson orthogonality catastrophe, in similitude to the Fermi edge singularity. A concrete setup for experimental observation of this effect is also suggested.

On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

NASA Astrophysics Data System (ADS)

Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

2017-12-01

The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

Filtering and Control of High Speed Motor Current in a Flywheel Energy Storage System

NASA Technical Reports Server (NTRS)

Kenny, Barbara H.; Santiago, Walter

2004-01-01

The NASA Glenn Research Center has been developing technology to enable the use of high speed flywheel energy storage units in future spacecraft for the last several years. An integral part of the flywheel unit is the three phase motor/generator that is used to accelerate and decelerate the flywheel. The motor/generator voltage is supplied from a pulse width modulated (PWM) inverter operating from a fixed DC voltage supply. The motor current is regulated through a closed loop current control that commands the necessary voltage from the inverter to achieve the desired current. The current regulation loop is the innermost control loop of the overall flywheel system and, as a result, must be fast and accurate over the entire operating speed range (20,000 to 60,000 rpm) of the flywheel. The voltage applied to the motor is a high frequency PWM version of the DC bus voltage that results in the commanded fundamental value plus higher order harmonics. Most of the harmonic content is at the switching frequency and above. The higher order harmonics cause a rapid change in voltage to be applied to the motor that can result in large voltage stresses across the motor windings. In addition, the high frequency content in the motor causes sensor noise in the magnetic bearings that leads to disturbances for the bearing control. To alleviate these problems, a filter is used to present a more sinusoidal voltage to the motor/generator. However, the filter adds additional dynamics and phase lag to the motor system that can interfere with the performance of the current regulator. This paper will discuss the tuning methodology and results for the motor/generator current regulator and the impact of the filter on the control. Results at speeds up to 50,000 rpm are presented.

Decentralized Interleaving of Paralleled Dc-Dc Buck Converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Brian B; Rodriguez, Miguel; Sinha, Mohit

We present a decentralized control strategy that yields switch interleaving among parallel-connected dc-dc buck converters. The proposed method is based on the digital implementation of the dynamics of a nonlinear oscillator circuit as the controller. Each controller is fully decentralized, i.e., it only requires the locally measured output current to synthesize the pulse width modulation (PWM) carrier waveform and no communication between different controllers is needed. By virtue of the intrinsic electrical coupling between converters, the nonlinear oscillator-based controllers converge to an interleaved state with uniform phase-spacing across PWM carriers. To the knowledge of the authors, this work presents themore » first fully decentralized strategy for switch interleaving in paralleled dc-dc buck converters.« less

Flare cue symbology and EVS for zero-zero weather landing

NASA Astrophysics Data System (ADS)

French, Guy A.; Murphy, David M.; Ercoline, William R.

2006-05-01

When flying an airplane, landing is arguably the most difficult task a pilot can do. This applies to pilots of all skill levels particularly as the level of complexity in both the aircraft and environment increase. Current navigational aids, such as an instrument landing system (ILS), do a good job of providing safe guidance for an approach to an airfield. These aids provide data to primary flight reference (PFR) displays on-board the aircraft depicting through symbology what the pilot's eyes should be seeing. Piloting an approach under visual meteorological conditions (VMC) is relatively easy compared to the various complex instrument approaches under instrument meteorological conditions (IMC) which may include flying in zero-zero weather. Perhaps the most critical point in the approach is the transition to landing where the rate of closure between the wheels and the runway is critical to a smooth, accurate landing. Very few PFR's provide this flare cue information. In this study we will evaluate examples of flare cueing symbology for use in landing an aircraft in the most difficult conditions. This research is a part of a larger demonstration effort using sensor technology to land in zero-zero weather at airfields that offer no or unreliable approach guidance. Several problems exist when landing without visual reference to the outside world. One is landing with a force greater than desired at touchdown and another is landing on a point of the runway other than desired. We compare different flare cueing systems to one another and against a baseline for completing this complex approach task.

Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

NASA Astrophysics Data System (ADS)

Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

2017-10-01

We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

Time-Resolved Small-Angle X-ray Scattering Reveals Millisecond Transitions of a DNA Origami Switch.

PubMed

Bruetzel, Linda K; Walker, Philipp U; Gerling, Thomas; Dietz, Hendrik; Lipfert, Jan

2018-04-11

Self-assembled DNA structures enable creation of specific shapes at the nanometer-micrometer scale with molecular resolution. The construction of functional DNA assemblies will likely require dynamic structures that can undergo controllable conformational changes. DNA devices based on shape complementary stacking interactions have been demonstrated to undergo reversible conformational changes triggered by changes in ionic environment or temperature. An experimentally unexplored aspect is how quickly conformational transitions of large synthetic DNA origami structures can actually occur. Here, we use time-resolved small-angle X-ray scattering to monitor large-scale conformational transitions of a two-state DNA origami switch in free solution. We show that the DNA device switches from its open to its closed conformation upon addition of MgCl 2 in milliseconds, which is close to the theoretical diffusive speed limit. In contrast, measurements of the dimerization of DNA origami bricks reveal much slower and concentration-dependent assembly kinetics. DNA brick dimerization occurs on a time scale of minutes to hours suggesting that the kinetics depend on local concentration and molecular alignment.

Current switching ratio optimization using dual pocket doping engineering

NASA Astrophysics Data System (ADS)

Dash, Sidhartha; Sahoo, Girija Shankar; Mishra, Guru Prasad

2018-01-01

This paper presents a smart idea to maximize current switching ratio of cylindrical gate tunnel FET (CGT) by growing pocket layers in both source and channel region. The pocket layers positioned in the source and channel of the device provides significant improvement in ON-state and OFF-state current respectively. The dual pocket doped cylindrical gate TFET (DP-CGT) exhibits much superior performance in term of drain current, transconductance and current ratio as compared to conventional CGT, channel pocket doped CGT (CP-CGT) and source pocket doped CGT (SP-CGT). Further, the current ratio has been optimized w.r.t. width and instantaneous position both the pocket layers. The much improved current ratio and low power consumption makes the proposed device suitable for low-power and high speed application. The simulation work of DP-CGT is done using 3D Sentaurus TCAD device simulator from Synopsys.

Open-loop correction for an eddy current dominated beam-switching magnet.

PubMed

Koseki, K; Nakayama, H; Tawada, M

2014-04-01

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10(-4) to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10(-3). By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10(-4), which is an acceptable value, was achieved.

Current Bypassing Properties by Thermal Switch for PCS Application on NMR/MRI HTS Magnets

NASA Astrophysics Data System (ADS)

Kim, S. B.; Takahashi, M.; Saito, R.; Park, Y. J.; Lee, M. W.; Oh, Y. K.; Ann, H. S.

We develop the compact NMR/MRI device using high temperature superconducting (HTS) wires with the persistent current mode operating. So, the joint techniques between 2G wires are very important issue and many studies have been carried out. Recently, the Kbigdot JOINS, Inc. has developed successfully the high performance superconducting joints between 2G wires by partial melting diffusion and oxygenation annealing process [1]. In this study, the current bypassing properties in a loop-shaped 2G wire are measured experimentally to develop the permanent current switch (PSC). The current bypassing properties of loop-shaped test coil wound with 2G wire (GdBCO) are evaluated by measured the self-magnetic field due to bypassed current by Hall sensors. The strain gauge was used as heater for persistent current switch, and thermal properties against various thermal inputs were investigated experimentally.

Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

NASA Astrophysics Data System (ADS)

Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

2014-12-01

Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

On the transient dynamics of piezoelectric-based, state-switched systems

NASA Astrophysics Data System (ADS)

Lopp, Garrett K.; Kelley, Christopher R.; Kauffman, Jeffrey L.

2018-01-01

This letter reports on the induced mechanical transients for piezoelectric-based, state-switching approaches utilizing both experimental tests and a numerical model that more accurately captures the dynamics associated with a switch between stiffness states. Currently, switching models instantaneously dissipate the stored piezoelectric voltage, resulting in a discrete change in effective stiffness states and a discontinuity in the system dynamics during the switching event. The proposed model allows for a rapid but continuous voltage dissipation and the corresponding variation between stiffness states, as one sees in physical implementations. This rapid variation in system stiffness when switching at a point of non-zero strain leads to high-frequency, large-amplitude transients in the system acceleration response. Utilizing a fundamental piezoelectric bimorph, a comparison between the numerical and experimental results reveals that these mechanical transients are much stronger than originally anticipated and masked by measurement hardware limitations, thus highlighting the significance of an appropriate system model governing the switch dynamics. Such a model enables designers to analyze systems that incorporate piezoelectric-based state switching with greater accuracy to ensure that these transients do not degrade the intended performance. Finally, if the switching does create unacceptable transients, controlling the duration of voltage dissipation enables control over the frequency content and peak amplitudes associated with the switch-induced acceleration transients.

Dispersion transitions and pole-zero characteristics of finite inertially amplified acoustic metamaterials

NASA Astrophysics Data System (ADS)

Al Ba'ba'a, H.; DePauw, D.; Singh, T.; Nouh, M.

2018-03-01

This work presents a comprehensive analysis of wave dispersion patterns and band gap formation associated with Inertially Amplified Acoustic Metamaterials (IAAM). The findings explain the different mechanisms by which inertial amplification affect wave dispersion in the individual IAAM cell as well as the evolution of such effects in finite configurations of these cells. Derived expressions for acoustic wave dispersion in IAAMs reveal unique features including flat dispersion branches with zero group velocity and a transition from a metamaterial (local resonance) to a phononic behavior that is directly related to the location and magnitude of the inerter elements. Using a closed-form transfer function approach, the translation of such effects to IAAM realizations with a known number of cells is interpreted from the pole-zero distributions of the resultant finite structures. It is also shown that band gaps are not always necessarily enlarged in the presence of inertial amplification. Comparing with benchmark conventional acoustic metamaterials, the conditions leading up to favorable as well as inferior IAAM designs are fully derived. Finally, an alternative resonator-free acoustic metamaterial is presented and shown to exhibit local resonance effects under appropriately tuned conditions.

Integrated Joule switches for the control of current dynamics in parallel superconducting strips

NASA Astrophysics Data System (ADS)

Casaburi, A.; Heath, R. M.; Cristiano, R.; Ejrnaes, M.; Zen, N.; Ohkubo, M.; Hadfield, R. H.

2018-06-01

Understanding and harnessing the physics of the dynamic current distribution in parallel superconducting strips holds the key to creating next generation sensors for single molecule and single photon detection. Non-uniformity in the current distribution in parallel superconducting strips leads to low detection efficiency and unstable operation, preventing the scale up to large area sensors. Recent studies indicate that non-uniform current distributions occurring in parallel strips can be understood and modeled in the framework of the generalized London model. Here we build on this important physical insight, investigating an innovative design with integrated superconducting-to-resistive Joule switches to break the superconducting loops between the strips and thus control the current dynamics. Employing precision low temperature nano-optical techniques, we map the uniformity of the current distribution before- and after the resistive strip switching event, confirming the effectiveness of our design. These results provide important insights for the development of next generation large area superconducting strip-based sensors.

Radiative lifetimes and transition probabilities for electric-dipole delta n equals zero transitions in highly stripped sulfur ions

NASA Technical Reports Server (NTRS)

Pegg, D. J.; Elston, S. B.; Griffin, P. M.; Forester, J. P.; Thoe, R. S.; Peterson, R. S.; Sellin, I. A.; Hayden, H. C.

1976-01-01

The beam-foil time-of-flight method has been used to investigate radiative lifetimes and transition rates involving allowed intrashell transitions within the L shell of highly ionized sulfur. The results for these transitions, which can be particularly correlation-sensitive, are compared with current calculations based upon multiconfigurational models.

Coulomb Blockade Plasmonic Switch.

PubMed

Xiang, Dao; Wu, Jian; Gordon, Reuven

2017-04-12

Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

Resistive switching near electrode interfaces: Estimations by a current model

NASA Astrophysics Data System (ADS)

Schroeder, Herbert; Zurhelle, Alexander; Stemmer, Stefanie; Marchewka, Astrid; Waser, Rainer

2013-02-01

The growing resistive switching database is accompanied by many detailed mechanisms which often are pure hypotheses. Some of these suggested models can be verified by checking their predictions with the benchmarks of future memory cells. The valence change memory model assumes that the different resistances in ON and OFF states are made by changing the defect density profiles in a sheet near one working electrode during switching. The resulting different READ current densities in ON and OFF states were calculated by using an appropriate simulation model with variation of several important defect and material parameters of the metal/insulator (oxide)/metal thin film stack such as defect density and its profile change in density and thickness, height of the interface barrier, dielectric permittivity, applied voltage. The results were compared to the benchmarks and some memory windows of the varied parameters can be defined: The required ON state READ current density of 105 A/cm2 can only be achieved for barriers smaller than 0.7 eV and defect densities larger than 3 × 1020 cm-3. The required current ratio between ON and OFF states of at least 10 requests defect density reduction of approximately an order of magnitude in a sheet of several nanometers near the working electrode.

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

NASA Astrophysics Data System (ADS)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping; Lan, Kuibo

2017-07-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples.

A hybrid electromechanical solid state switch for ac power control

NASA Technical Reports Server (NTRS)

1972-01-01

Bidirectional thyristor coupled to a series of actuator driven electromechanical contacts generates hybrid electromechanical solid state switch for ac power control. Device is useful in power control applications where zero crossover switching is required.

Light-Actuated Micromechanical Relays for Zero-Power Infrared Detection

DTIC Science & Technology

2017-03-01

Light-Actuated Micromechanical Relays for Zero-Power Infrared Detection Zhenyun Qian, Sungho Kang, Vageeswar Rajaram, Cristian Cassella, Nicol E...near-zero power infrared (IR) detection . Differently from any existing switching element, the proposed LMR relies on a plasmonically-enhanced...chip enabling the monolithic fabrication of multiple LMRs connected together to form a logic topology suitable for the detection of specific

Fluid-sensitive nanoscale switching with quantum levitation controlled by α -Sn/β -Sn phase transition

NASA Astrophysics Data System (ADS)

Boström, Mathias; Dou, Maofeng; Malyi, Oleksandr I.; Parashar, Prachi; Parsons, Drew F.; Brevik, Iver; Persson, Clas

2018-03-01

We analyze the Lifshitz pressure between silica and tin separated by a liquid mixture of bromobenzene and chlorobenzene. We show that the phase transition from semimetallic α -Sn to metallic β -Sn can switch Lifshitz forces from repulsive to attractive. This effect is caused by the difference in dielectric functions of α -Sn and β -Sn , giving both attractive and repulsive contributions to the total Lifshitz pressure in different frequency regions controlled by the composition of the intervening liquid mixture. In this way, one may be able to produce phase-transition-controlled quantum levitation in a liquid medium.

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

PubMed

Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

2015-07-08

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

Casimir switch: steering optical transparency with vacuum forces.

PubMed

Liu, Xi-Fang; Li, Yong; Jing, H

2016-06-03

The Casimir force, originating from vacuum zero-point energy, is one of the most intriguing purely quantum effects. It has attracted renewed interests in current field of nanomechanics, due to the rapid size decrease of on-chip devices. Here we study the optomechanically-induced transparency (OMIT) with a tunable Casimir force. We find that the optical output rate can be significantly altered by the vacuum force, even terminated and then restored, indicating a highly-controlled optical switch. Our result addresses the possibility of designing exotic optical nano-devices by harnessing the power of vacuum.

Force-dependent switch in protein unfolding pathways and transition-state movements

PubMed Central

Zhuravlev, Pavel I.; Hinczewski, Michael; Chakrabarti, Shaon; Marqusee, Susan; Thirumalai, D.

2016-01-01

Although it is known that single-domain proteins fold and unfold by parallel pathways, demonstration of this expectation has been difficult to establish in experiments. Unfolding rate, ku(f), as a function of force f, obtained in single-molecule pulling experiments on src SH3 domain, exhibits upward curvature on a log⁡ku(f) plot. Similar observations were reported for other proteins for the unfolding rate ku([C]). These findings imply unfolding in these single-domain proteins involves a switch in the pathway as f or [C] is increased from a low to a high value. We provide a unified theory demonstrating that if log⁡ku as a function of a perturbation (f or [C]) exhibits upward curvature then the underlying energy landscape must be strongly multidimensional. Using molecular simulations we provide a structural basis for the switch in the pathways and dramatic shifts in the transition-state ensemble (TSE) in src SH3 domain as f is increased. We show that a single-point mutation shifts the upward curvature in log⁡ku(f) to a lower force, thus establishing the malleability of the underlying folding landscape. Our theory, applicable to any perturbation that affects the free energy of the protein linearly, readily explains movement in the TSE in a β-sandwich (I27) protein and single-chain monellin as the denaturant concentration is varied. We predict that in the force range accessible in laser optical tweezer experiments there should be a switch in the unfolding pathways in I27 or its mutants. PMID:26818842

Force-dependent switch in protein unfolding pathways and transition-state movements.

PubMed

Zhuravlev, Pavel I; Hinczewski, Michael; Chakrabarti, Shaon; Marqusee, Susan; Thirumalai, D

2016-02-09

Although it is known that single-domain proteins fold and unfold by parallel pathways, demonstration of this expectation has been difficult to establish in experiments. Unfolding rate, [Formula: see text], as a function of force f, obtained in single-molecule pulling experiments on src SH3 domain, exhibits upward curvature on a [Formula: see text] plot. Similar observations were reported for other proteins for the unfolding rate [Formula: see text]. These findings imply unfolding in these single-domain proteins involves a switch in the pathway as f or [Formula: see text] is increased from a low to a high value. We provide a unified theory demonstrating that if [Formula: see text] as a function of a perturbation (f or [Formula: see text]) exhibits upward curvature then the underlying energy landscape must be strongly multidimensional. Using molecular simulations we provide a structural basis for the switch in the pathways and dramatic shifts in the transition-state ensemble (TSE) in src SH3 domain as f is increased. We show that a single-point mutation shifts the upward curvature in [Formula: see text] to a lower force, thus establishing the malleability of the underlying folding landscape. Our theory, applicable to any perturbation that affects the free energy of the protein linearly, readily explains movement in the TSE in a β-sandwich (I27) protein and single-chain monellin as the denaturant concentration is varied. We predict that in the force range accessible in laser optical tweezer experiments there should be a switch in the unfolding pathways in I27 or its mutants.

Open-loop correction for an eddy current dominated beam-switching magnet

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koseki, K., E-mail: kunio.koseki@kek.jp; Nakayama, H.; Tawada, M.

2014-04-15

A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10{sup −4} to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the requiredmore » flat-top period. The measured field flatness was 5 × 10{sup −3}. By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10{sup −4}, which is an acceptable value, was achieved.« less

Remotely-actuated biomedical switch

NASA Technical Reports Server (NTRS)

Lee, R. D.

1969-01-01

Remotely-actuated biomedical switching circuit using transistors consumes no power in the off position and can be actuated by a single-frequency telemetry pulse to control implanted instrumentation. Silicon controlled rectifiers permit the circuit design which imposes zero drain on supply batteries when not in use.

Switchable zero-index metamaterials by loading positive-intrinsic-negative diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Nan; Cheng, Qiang, E-mail: qiangcheng@emfield.org; Zhao, Jie

2014-02-03

We propose switchable zero-index metamaterials (ZIMs) implemented by split ring resonators (SRRs) loaded with positive-intrinsic-negative (PIN) diode switching elements. We demonstrate that ZIMs can be achieved at around 10 GHz when the PIN diode is switched off. When the PIN diode is switched on, however, the designed metamaterials have impedance matching to the free space, which is useful to reduce the reflections at the interface of two media. The switchable ZIMs are suitable for a wide variety of applications like the beam forming and directive radiation. Experimental results validate the switching ability of the proposed ZIMs.

Latching micro optical switch

DOEpatents

Garcia, Ernest J; Polosky, Marc A

2013-05-21

An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2017-01-01

In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

ERP indices of persisting and current inhibitory control: a study of saccadic task switching.

PubMed

Mueller, S C; Swainson, R; Jackson, G M

2009-03-01

Previous studies have found that inhibition of a biologically dominant prepotent response tendency is required during the execution of a less familiar, non-prepotent response. However, the lasting impact of this inhibition and the cognitive mechanisms to flexibly switch between prepotent and non-prepotent responses are poorly understood. We examined the neurophysiological (ERP) correlates of switching between prosaccade and antisaccade responses in 22 healthy volunteers. The behavioural data showed significant switch costs in terms of response latency for the prosaccade task only. These costs occurred exclusively in trials when preparation for the switch was limited to 300 ms, suggesting that inhibition of the prepotent prosaccade task either passively dissipated or was actively overcome during the longer 1000 ms preparation interval. In the neurophysiological data, a late frontal negativity (LFN) was visible during preparation for a switch to the prosaccade task that was absent when switching to the antisaccade task, which may reflect the overcoming of persisting inhibition. During task implementation both saccade types were associated with a late parietal positivity (LPP) for switch relative to repetition trials, possibly indicating attentional reorienting to the switched-to task, and visible only with short preparation intervals. When the prosaccade and antisaccade task were contrasted directly during task implementation, the antisaccade task exhibited increased stimulus-locked N2 and decreased P3 amplitudes indicative of active inhibition. The present findings indicate that neurophysiological markers of persisting and current inhibition can be revealed using a prosaccade/antisaccade-switching task.

Experimental Determination of Dynamical Lee-Yang Zeros

NASA Astrophysics Data System (ADS)

Brandner, Kay; Maisi, Ville F.; Pekola, Jukka P.; Garrahan, Juan P.; Flindt, Christian

2017-05-01

Statistical physics provides the concepts and methods to explain the phase behavior of interacting many-body systems. Investigations of Lee-Yang zeros—complex singularities of the free energy in systems of finite size—have led to a unified understanding of equilibrium phase transitions. The ideas of Lee and Yang, however, are not restricted to equilibrium phenomena. Recently, Lee-Yang zeros have been used to characterize nonequilibrium processes such as dynamical phase transitions in quantum systems after a quench or dynamic order-disorder transitions in glasses. Here, we experimentally realize a scheme for determining Lee-Yang zeros in such nonequilibrium settings. We extract the dynamical Lee-Yang zeros of a stochastic process involving Andreev tunneling between a normal-state island and two superconducting leads from measurements of the dynamical activity along a trajectory. From the short-time behavior of the Lee-Yang zeros, we predict the large-deviation statistics of the activity which is typically difficult to measure. Our method paves the way for further experiments on the statistical mechanics of many-body systems out of equilibrium.

Highly Sensitive Temperature Sensors Based on Fiber-Optic PWM and Capacitance Variation Using Thermochromic Sensing Membrane.

PubMed

Khan, Md Rajibur Rahaman; Kang, Shin-Won

2016-07-09

In this paper, we propose a temperature/thermal sensor that contains a Rhodamine-B sensing membrane. We applied two different sensing methods, namely, fiber-optic pulse width modulation (PWM) and an interdigitated capacitor (IDC)-based temperature sensor to measure the temperature from 5 °C to 100 °C. To the best of our knowledge, the fiber-optic PWM-based temperature sensor is reported for the first time in this study. The proposed fiber-optic PWM temperature sensor has good sensing ability; its sensitivity is ~3.733 mV/°C. The designed temperature-sensing system offers stable sensing responses over a wide dynamic range, good reproducibility properties with a relative standard deviation (RSD) of ~0.021, and the capacity for a linear sensing response with a correlation coefficient of R² ≈ 0.992 over a wide sensing range. In our study, we also developed an IDC temperature sensor that is based on the capacitance variation principle as the IDC sensing element is heated. We compared the performance of the proposed temperature-sensing systems with different fiber-optic temperature sensors (which are based on the fiber-optic wavelength shift method, the long grating fiber-optic Sagnac loop, and probe type fiber-optics) in terms of sensitivity, dynamic range, and linearity. We observed that the proposed sensing systems have better sensing performance than the above-mentioned sensing system.

Plastic Transition to Switch Nonlinear Optical Properties Showing the Record High Contrast in a Single-Component Molecular Crystal.

PubMed

Sun, Zhihua; Chen, Tianliang; Liu, Xitao; Hong, Maochun; Luo, Junhua

2015-12-23

To switch bulk nonlinear optical (NLO) effects represents an exciting new branch of NLO material science, whereas it remains a great challenge to achieve high contrast for "on/off" of quadratic NLO effects in crystalline materials. Here, we report the supereminent NLO-switching behaviors of a single-component plastic crystal, 2-(hydroxymethyl)-2-nitro-1,3-propanediol (1), which shows a record high contrast of at least ∼150, exceeding all the known crystalline switches. Such a breakthrough is clearly elucidated from the slowing down of highly isotropic molecular motions during plastic-to-rigid transition. The deep understanding of its intrinsic plasticity and superior NLO property allows the construction of a feasible switching mechanism. As a unique class of substances with short-range disorder embedded in long-range ordered crystalline lattice, plastic crystals enable response to external stimuli and fulfill specific photoelectric functions, which open a newly conceptual avenue for the designing of new functional materials.

Mechanical switching of ferroelectric domains beyond flexoelectricity

NASA Astrophysics Data System (ADS)

Chen, Weijin; Liu, Jianyi; Ma, Lele; Liu, Linjie; Jiang, G. L.; Zheng, Yue

2018-02-01

The resurgence of interest in flexoelectricity has prompted discussions on the feasibility of switching ferroelectric domains 'non-electrically'. In this work, we perform three-dimensional thermodynamic simulations in combination with ab initio calculations and effective Hamiltonian simulations to demonstrate the great effects of surface screening and surface bonding on ferroelectric domain switching triggered by local tip loading. A three-dimensional simulation scheme has been developed to capture the tip-induced domain switching behavior in ferroelectric thin films by adequately taking into account the surface screening effect and surface bonding effect of the ferroelectric film, as well as the finite elastic stiffness of the substrate and the electrode layers. The major findings are as follows. (i) Compared with flexoelectricity, surface effects can be overwhelming and lead to much more efficient mechanical switching caused by tip loading. (ii) The surface-assisted mechanical switching can be bi-directional without the necessity of reversing strain gradients. (iii) A mode transition from local to propagating domain switching occurs when the screening below a critical value. A ripple effect of domain switching appears with the formation of concentric loop domains. (iv) The ripple effect can lead to 'domain interference' and a deterministic writing of confined loop domain patterns by local excitations. Our study reveals the hidden switching mechanisms of ferroelectric domains and the possible roles of surface in mechanical switching. The ripple effect of domain switching, which is believed to be general in dipole systems, broadens our current knowledge of domain engineering.

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

PubMed

Pickett, Matthew D; Williams, R Stanley

2012-06-01

We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.

Resolving discrete pulsar spin-down states with current and future instrumentation

NASA Astrophysics Data System (ADS)

Shaw, B.; Stappers, B. W.; Weltevrede, P.

2018-04-01

An understanding of pulsar timing noise offers the potential to improve the timing precision of a large number of pulsars as well as facilitating our understanding of pulsar magnetospheres. For some sources, timing noise is attributable to a pulsar switching between two different spin-down rates (\\dot{ν }). Such transitions may be common but difficult to resolve using current techniques. In this work, we use simulations of \\dot{ν }-variable pulsars to investigate the likelihood of resolving individual \\dot{ν } transitions. We inject step changes in the value of \\dot{ν } with a wide range of amplitudes and switching time-scales. We then attempt to redetect these transitions using standard pulsar timing techniques. The pulse arrival-time precision and the observing cadence are varied. Limits on \\dot{ν } detectability based on the effects such transitions have on the timing residuals are derived. With the typical cadences and timing precision of current timing programmes, we find that we are insensitive to a large region of Δ \\dot{ν } parameter space that encompasses small, short time-scale switches. We find, where the rotation and emission states are correlated, that using changes to the pulse shape to estimate \\dot{ν } transition epochs can improve detectability in certain scenarios. The effects of cadence on Δ \\dot{ν } detectability are discussed, and we make comparisons with a known population of intermittent and mode-switching pulsars. We conclude that for short time-scale, small switches, cadence should not be compromised when new generations of ultra-sensitive radio telescopes are online.

Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

PubMed Central

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

2014-01-01

The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

PubMed

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

High-frequency AC/DC converter with unity power factor and minimum harmonic distortion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wernekinch, E.R.

1987-01-01

The power factor is controlled by adjusting the relative position of the fundamental component of an optimized PWM-type voltage with respect to the supply voltage. Current harmonic distortion is minimized by the use of optimized firing angles for the converter at a frequency where GTO's can be used. This feature makes this approach very attractive at power levels of 100 to 600 kW. To obtain the optimized PWM pattern, a steepest descent digital computer algorithm is used. Digital-computer simulations are performed and a low-power model is constructed and tested to verify the concepts and the behavior of the model. Experimentalmore » results show that unity power factor is achieved and that the distortion in the phase currents is 10.4% at 90% of full load. This is less than achievable with sinusoidal PWM, harmonic elimination, hysteresis control, and deadbeat control for the same switching frequency.« less

Robust ion current oscillations under a steady electric field: An ion channel analog.

PubMed

Yan, Yu; Wang, Yunshan; Senapati, Satyajyoti; Schiffbauer, Jarrod; Yossifon, Gilad; Chang, Hsueh-Chia

2016-08-01

We demonstrate a nonlinear, nonequilibrium field-driven ion flux phenomenon, which unlike Teorell's nonlinear multiple field theory, requires only the application of one field: robust autonomous current-mass flux oscillations across a porous monolith coupled to a capillary with a long air bubble, which mimics a hydrophobic protein in an ion channel. The oscillations are driven by the hysteretic wetting dynamics of the meniscus when electro-osmotic flow and pressure driven backflow, due to bubble expansion, compete to approach zero mass flux within the monolith. Delayed rupture of the film around the advancing bubble cuts off the electric field and switches the monolith mass flow from the former to the latter. The meniscus then recedes and repairs the rupture to sustain an oscillation for a range of applied fields. This generic mechanism shares many analogs with current oscillations in cell membrane ion channel. At sufficiently high voltage, the system undergoes a state transition characterized by appearance of the ubiquitous 1/f power spectrum.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Electromagnetic phenomena analysis in brushless DC motor with speed control using PWM method

NASA Astrophysics Data System (ADS)

Ciurys, Marek Pawel

2017-12-01

Field-circuit model of a brushless DC motor with speed control using PWM method was developed. Waveforms of electrical and mechanical quantities of the designed motor with a high pressure vane pump built in a rotor of the motor were computed. Analysis of electromagnetic phenomena in the system: single phase AC network - converter - BLDC motor was carried out.

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, William Newell; Thomas, Robert James

1999-01-01

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Ghosh, R.; Liu, Y.; Lopez, R.

2011-12-01

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E˜6.5×107Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

Hall-MHD and PIC Modeling of the Conduction-to-Opening Transition in a Plasma Opening Switch

NASA Astrophysics Data System (ADS)

Schumer, J. W.; SwanekampDdagger, S. B.; Ottinger, P. F.; Commisso, R. J.; Weber, B. V.

1998-11-01

Utilizing the fast opening characteristics of a plasma opening switch (POS), inductive energy storage devices can generate short-duration high-power pulses (<0.1 μ s, >1 TW) with current rise-times on the order of 10 ns. Plasma redistribution and thinning during the POS conduction phase can be modeled adequately with MHD methods. By including the Hall term in Ohm's Law, MHD methods can simulate plasmas with density gradient scale lengths between c/ω_pe < Ln < c/ω_pi. However, the neglect of electron inertia (c/ω_pe) and space-charge separation (λ_De) by single-fluid theory eventually becomes invalid in small gap regions that form during POS opening. PIC methods are well-suited for low-density plasmas, but are numerically taxed by high-density POS regions. An interface converts MHD (Mach2) output into PIC (Magic) input suitable for validating various transition criteria through comparison of current and density distributions from both methods. We will discuss recent progress in interfacing Hall-MHD and PIC simulations. Work supported by Defense Special Weapons Agency. ^ NRL-NRC Research Associate. hspace0.25in ^ JAYCOR, Vienna, VA 22102.

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities.

PubMed

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-04-21

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 10(4) ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)(-1) just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling.

Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities

PubMed Central

Alymov, Georgy; Vyurkov, Vladimir; Ryzhii, Victor; Svintsov, Dmitry

2016-01-01

In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit the steepest current switching due to the singular density of states near the band edges, though the current in 1D structures is pretty low. In this paper, we propose a TFET based on 2D graphene bilayer which demonstrates a record steep subthreshold slope enabled by van Hove singularities in the density of states near the edges of conduction and valence bands. Our simulations show the accessibility of 3.5 × 104 ON/OFF current ratio with 150 mV gate voltage swing, and a maximum subthreshold slope of (20 μV/dec)−1 just above the threshold. The high ON-state current of 0.8 mA/μm is enabled by a narrow (~0.3 eV) extrinsic band gap, while the smallness of the leakage current is due to an all-electrical doping of the source and drain contacts which suppresses the band tailing and trap-assisted tunneling. PMID:27098051

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

Path planning during combustion mode switch

DOEpatents

Jiang, Li; Ravi, Nikhil

2015-12-29

Systems and methods are provided for transitioning between a first combustion mode and a second combustion mode in an internal combustion engine. A current operating point of the engine is identified and a target operating point for the internal combustion engine in the second combustion mode is also determined. A predefined optimized transition operating point is selected from memory. While operating in the first combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion engine to approach the selected optimized transition operating point. When the engine is operating at the selected optimized transition operating point, the combustion mode is switched from the first combustion mode to the second combustion mode. While operating in the second combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion to approach the target operating point.

Droplet size distributions of adjuvant-amended sprays from an air-assisted five-port PWM nozzle

USDA-ARS?s Scientific Manuscript database

Verification of droplet size distributions is essential for the development of real-time variable-rate sprayers that synchronize spray outputs with canopy structures. Droplet sizes from a custom-designed, air-assisted, five-port nozzle coupled with a pulse-width-modulated (PWM) solenoid valve were m...

Time varying moments, regime switch, and crisis warning: The birth-death process with changing transition probability

NASA Astrophysics Data System (ADS)

Tang, Yinan; Chen, Ping

2014-06-01

The sub-prime crisis in the U.S. reveals the limitation of diversification strategy based on mean-variance analysis. A regime switch and a turning point can be observed using a high moment representation and time-dependent transition probability. Up-down price movements are induced by interactions among agents, which can be described by the birth-death (BD) process. Financial instability is visible by dramatically increasing 3rd to 5th moments one-quarter before and during the crisis. The sudden rising high moments provide effective warning signals of a regime-switch or a coming crisis. The critical condition of a market breakdown can be identified from nonlinear stochastic dynamics. The master equation approach of population dynamics provides a unified theory of a calm and turbulent market.

Spin-orbit torque induced magnetization switching in heavy metal/ferromagnet multilayers with bilayer of heavy metals

NASA Astrophysics Data System (ADS)

Bekele, Zelalem Abebe; Meng, Kangkang; Zhao, Bing; Wu, Yong; Miao, Jun; Xu, Xiaoguang; Jiang, Yong

2017-08-01

Symmetry breaking provides new insight into the physics of spin-orbit torque (SOT) and the switching without a magnetic field could lead to significant impact. In this work, we demonstrate the robust zero-field SOT switching of a perpendicular ferromagnet (FM) layer where the symmetry is broken by a bilayer of heavy metals (HMs) with the strong spin-orbit coupling (SOC). We observed the change of coercivity value by 31% after inserting Co2FeAl in the multilayer structure. These two HM layers (Ta and Pt) are used to strengthen the SOC by linear combination. With different angles between the magnetization and the current (i.e. parallel and anti-parallel), the structures show different switching behaviors such as clockwise or counterclockwise.

Fuel Cell Buses in U.S. Transit Fleets: Current Status 2015

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eudy, Leslie; Post, Matthew; Gikakis, Christina

This report, published annually, summarizes the progress of fuel cell electric bus (FCEB) development in the United States and discusses the achievements and challenges of introducing fuel cell propulsion in transit. Various stakeholders, including FCEB developers, transit agencies, and system integrators, have expressed the value of this annual status report, which provides a summary of results from evaluations performed by the National Renewable Energy Laboratory. The annual status report tracks the progress of the FCEB industry toward meeting technical targets, documents the lessons learned, and discusses the path forward for commercial viability of fuel cell technology for transit buses. Themore » 2015 summary results primarily focus on the most recent year for each demonstration, from August 2014 through July 2015. The results for these buses account for more than 1,045,000 miles traveled and 83,000 hours of fuel cell power system operation. The primary results presented in the report are from two demonstrations of fuel-cell-dominant bus designs: the Zero Emission Bay Area Demonstration Group led by Alameda-Contra Costa Transit District (AC Transit) in California and the American Fuel Cell Bus Project at SunLine Transit Agency in California.« less

Zero energy-storage ballast for compact fluorescent lamps

DOEpatents

Schultz, W.N.; Thomas, R.J.

1999-08-31

A CFL ballast includes complementary-type switching devices connected in series with their gates connected together at a control node. The switching devices supply a resonant tank circuit which is tuned to a frequency near, but slightly lower than, the resonant frequency of a resonant control circuit. As a result, the tank circuit restarts oscillations immediately following each zero crossing of the bus voltage. Such rapid restarts avoid undesirable flickering while maintaining the operational advantages and high efficacy of the CFL ballast. 4 figs.

A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

ERIC Educational Resources Information Center

Gollan, Tamar H.; Goldrick, Matthew

2018-01-01

The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

Zero Thermal Noise in Resistors at Zero Temperature

NASA Astrophysics Data System (ADS)

Kish, Laszlo B.; Niklasson, Gunnar A.; Granqvist, Claes-Göran

2016-06-01

The bandwidth of transistors in logic devices approaches the quantum limit, where Johnson noise and associated error rates are supposed to be strongly enhanced. However, the related theory — asserting a temperature-independent quantum zero-point (ZP) contribution to Johnson noise, which dominates the quantum regime — is controversial and resolution of the controversy is essential to determine the real error rate and fundamental energy dissipation limits of logic gates in the quantum limit. The Callen-Welton formula (fluctuation-dissipation theorem) of voltage and current noise for a resistance is the sum of Nyquist’s classical Johnson noise equation and a quantum ZP term with a power density spectrum proportional to frequency and independent of temperature. The classical Johnson-Nyquist formula vanishes at the approach of zero temperature, but the quantum ZP term still predicts non-zero noise voltage and current. Here, we show that this noise cannot be reconciled with the Fermi-Dirac distribution, which defines the thermodynamics of electrons according to quantum-statistical physics. Consequently, Johnson noise must be nil at zero temperature, and non-zero noise found for certain experimental arrangements may be a measurement artifact, such as the one mentioned in Kleen’s uncertainty relation argument.

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

NASA Astrophysics Data System (ADS)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.

PubMed

Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan

2015-10-02

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current

NASA Astrophysics Data System (ADS)

Kim, Sung Min; Song, Emil B.; Lee, Sejoon; Seo, Sunae; Seo, David H.; Hwang, Yongha; Candler, R.; Wang, Kang L.

2011-07-01

Suspended few-layer graphene beam electro-mechanical switches (SGSs) with 0.15 μm air-gap are fabricated and electrically characterized. The SGS shows an abrupt on/off current characteristics with minimal off current. In conjunction with the narrow air-gap, the outstanding mechanical properties of graphene enable the mechanical switch to operate at a very low pull-in voltage (VPI) of 1.85 V, which is compatible with conventional complimentary metal-oxide-semiconductor (CMOS) circuit requirements. In addition, we show that the pull-in voltage exhibits an inverse dependence on the beam length.

Near-zero thermal expansion and phase transitions in HfMg1-xZnxMo3O12

NASA Astrophysics Data System (ADS)

Li, Sailei; Ge, Xianghong; Yuan, Huanli; Chen, Dongxia; Guo, Juan; Shen, Ruofan; Chao, Mingju; Liang, Erjun

2018-04-01

The effects of Zn2+ incorporation on the phase formation, thermal expansion, phase transition and vibrational properties ofHfMg1-xZnxMo3O12 are investigated by XRD, dilatometry and Raman spectroscopy. The results show that (i) single phase formation is only possible for x≤0.5, otherwise, additional phases ofHfMo2O8 and ZnMoO4 appear; (ii) The phase transition temperature from monoclinic to orthorhombic structure of the single phase HfMg1-xZnxMo3O12 can be well tailored, which increases with the content of Zn2+; (iii) The incorporation of Zn2+ leads to an pronounced reduction in the positive expansion of the b-axis and a enhanced negative thermal expansion in the c-axes, leading to a near-zero thermal expansion property with lower anisotropy over a wide temperature range; (iv) Replacement of Mg2+ by Zn2+ weakens the Mo-O bonds as revealed by obvious red shifts of all the Mo-O stretching modes with increasing the content of Zn2+ and improves the sintering performance of the samples which is observed by SEM. The mechanisms of the negative and near-zero thermal expansion are discussed.

All-optical OXC transition strategy from WDM optical network to elastic optical network.

PubMed

Chen, Xin; Li, Juhao; Guo, Bingli; Zhu, Paikun; Tang, Ruizhi; Chen, Zhangyuan; He, Yongqi

2016-02-22

Elastic optical network (EON) has been proposed recently as a spectrum-efficient optical layer to adapt to rapidly-increasing traffic demands instead of current deployed wavelength-division-multiplexing (WDM) optical network. In contrast with conventional WDM optical cross-connect (OXCs) based on wavelength selective switches (WSSs), the EON OXCs are based on spectrum selective switches (SSSs) which are much more expensive than WSSs, especially for large-scale switching architectures. So the transition cost from WDM OXCs to EON OXCs is a major obstacle to realizing EON. In this paper, we propose and experimentally demonstrate a transition OXC (TOXC) structure based on 2-stage cascading switching architectures, which make full use of available WSSs in current deployed WDM OXCs to reduce number and port count of required SSSs. Moreover, we propose a contention-aware spectrum allocation (CASA) scheme for EON built with the proposed TOXCs. We show by simulation that the TOXCs reduce the network capital expenditure transiting from WDM optical network to EON about 50%, with a minor traffic blocking performance degradation and about 10% accommodated traffic number detriment compared with all-SSS EON OXC architectures.

Design of 5 V DC to 20 V DC switching regulator for power supply module

NASA Astrophysics Data System (ADS)

Azmi, N. A.; Murad, S. A. Z.; Harun, A.; Ismail, R. C.; Isa, M. N. M.; Zulkifeli, M. A.

2017-09-01

This paper presents the design of 5 V to 20 V DC switching regulator for power supply module. A voltage multiplier which consists of cascaded diode-capacitor combination is used in order to obtain a high voltage power supply. Due to power loss that has occurred in a stray of component arrangement, the proposed design employs a pulse width modulation (PWM) controller circuit with an inclusion of a capacitor, diode, and inductor components. The input supply of 5 V DC to LT1618 controller circuit has produced 20.35 V based from simulation results. Meanwhile, the measurement results of 19.36 V are obtained and the feedback signal is required for the purpose of stabilizing the output. The proposed design can reduce the components as well as the PCB size, thus minimizing the overall cost of making a switching regulator for power supply module.

A high-current rail-type gas switch with preionization by an additional corona discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, andmore » the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.« less

A high-current rail-type gas switch with preionization by an additional corona discharge

NASA Astrophysics Data System (ADS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-12-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10-45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion

NASA Astrophysics Data System (ADS)

Sommerer, Timothy J.

2014-05-01

We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

Current-induced switching in CoGa/L10 MnGa/(CoGa)/Pt structure with different thicknesses

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Mizukami, S.

2018-06-01

In this paper, we present the results of our study into current-induced spin-orbit torque (SOT) switching in perpendicularly magnetized CoGa/MnGa/Pt trilayers with different thicknesses of MnGa and Pt. The SOT switching was observed for all films that undergo Joule heating. We also investigate SOT switching in the bottom (CoGa)/MnGa/top(CoGa/Pt) films with different top layers. Although both the bottom and top layers contribute to the SOT, the relative magnitudes of the switching current densities JC in the top and bottom layers indicate that the SOT is dominant in the top layer. The JC as a function of thickness is discussed in terms of the magnetic properties and resistivity. Experimental data suggested that the MnGa thickness dependence of JC may originate from the perpendicular magnetic anisotropy thickness product Kueff t value. On the other hand, JC as a function of the Pt thickness shows weak dependence. This may be attributed to the slight change of spin-Hall angle θSH value with different thicknesses of Pt, when we assumed that the SOT switching is primarily due to the spin-Hall effect.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Photonic zero mode in a non-Hermitian photonic lattice.

PubMed

Pan, Mingsen; Zhao, Han; Miao, Pei; Longhi, Stefano; Feng, Liang

2018-04-03

Zero-energy particles (such as Majorana fermions) are newly predicted quasiparticles and are expected to play an important role in fault-tolerant quantum computation. In conventional Hermitian quantum systems, however, such zero states are vulnerable and even become vanishing if couplings with surroundings are of the same topological nature. Here we demonstrate a robust photonic zero mode sustained by a spatial non-Hermitian phase transition in a parity-time (PT) symmetric lattice, despite the same topological order across the entire system. The non-Hermitian-enhanced topological protection ensures the reemergence of the zero mode at the phase transition interface when the two semi-lattices under different PT phases are decoupled effectively in their real spectra. Residing at the midgap level of the PT symmetric spectrum, the zero mode is topologically protected against topological disorder. We experimentally validated the robustness of the zero-energy mode by ultrafast heterodyne measurements of light transport dynamics in a silicon waveguide lattice.

A new type of accelerator power supply based on voltage-type space vector PWM rectification technology

NASA Astrophysics Data System (ADS)

Wu, Fengjun; Gao, Daqing; Shi, Chunfeng; Huang, Yuzhen; Cui, Yuan; Yan, Hongbin; Zhang, Huajian; Wang, Bin; Li, Xiaohui

2016-08-01

To solve the problems such as low input power factor, a large number of AC current harmonics and instable DC bus voltage due to the diode or thyristor rectifier used in an accelerator power supply, particularly in the Heavy Ion Research Facility in Lanzhou-Cooler Storage Ring (HIRFL-CSR), we designed and built up a new type of accelerator power supply prototype base on voltage-type space vector PWM (SVPWM) rectification technology. All the control strategies are developed in TMS320C28346, which is a digital signal processor from TI. The experimental results indicate that an accelerator power supply with a SVPWM rectifier can solve the problems above well, and the output performance such as stability, tracking error and ripple current meet the requirements of the design. The achievement of prototype confirms that applying voltage-type SVPWM rectification technology in an accelerator power supply is feasible; and it provides a good reference for design and build of this new type of power supply.

Electrical switching in Sb doped Al23Te77 glasses

NASA Astrophysics Data System (ADS)

Pumlianmunga; Ramesh, K.

2017-08-01

Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field.

PubMed

Ben Dor, Oren; Yochelis, Shira; Radko, Anna; Vankayala, Kiran; Capua, Eyal; Capua, Amir; Yang, See-Hun; Baczewski, Lech Tomasz; Parkin, Stuart Stephen Papworth; Naaman, Ron; Paltiel, Yossi

2017-02-23

Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory. However, the current density required for the spin-transfer torque is of the order of 1 × 10 6  A·cm -2 , or about 1 × 10 25 electrons s -1 cm -2 . This relatively high current density significantly affects the devices' structure and performance. Here we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adsorption of chiral molecules. In this case, about 10 13 electrons per cm 2 are sufficient to induce magnetization reversal. The direction of the magnetization depends on the handedness of the adsorbed chiral molecules. Local magnetization switching is achieved by adsorbing a chiral self-assembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotropy. These results present a simple low-power magnetization mechanism when operating at ambient conditions.

Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field

PubMed Central

Ben Dor, Oren; Yochelis, Shira; Radko, Anna; Vankayala, Kiran; Capua, Eyal; Capua, Amir; Yang, See-Hun; Baczewski, Lech Tomasz; Parkin, Stuart Stephen Papworth; Naaman, Ron; Paltiel, Yossi

2017-01-01

Ferromagnets are commonly magnetized by either external magnetic fields or spin polarized currents. The manipulation of magnetization by spin-current occurs through the spin-transfer-torque effect, which is applied, for example, in modern magnetoresistive random access memory. However, the current density required for the spin-transfer torque is of the order of 1 × 106 A·cm−2, or about 1 × 1025 electrons s−1 cm−2. This relatively high current density significantly affects the devices' structure and performance. Here we demonstrate magnetization switching of ferromagnetic thin layers that is induced solely by adsorption of chiral molecules. In this case, about 1013 electrons per cm2 are sufficient to induce magnetization reversal. The direction of the magnetization depends on the handedness of the adsorbed chiral molecules. Local magnetization switching is achieved by adsorbing a chiral self-assembled molecular monolayer on a gold-coated ferromagnetic layer with perpendicular magnetic anisotropy. These results present a simple low-power magnetization mechanism when operating at ambient conditions. PMID:28230054

Power-Switching Circuit

NASA Technical Reports Server (NTRS)

Praver, Gerald A.; Theisinger, Peter C.; Genofsky, John

1987-01-01

Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.

The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

NASA Astrophysics Data System (ADS)

Karlsteen, M.; Willander, M.

1993-11-01

In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

Electrical Tuning of Valley-Polarized Circular Photogalvanic Current in a Monolayer Transition Metal Dichalcogenide

NASA Astrophysics Data System (ADS)

Liu, Lei; Lenferink, Erik J.; Stanev, Teodor K.; Stern, Nathaniel P.; Wei, Guohua

In a monolayer transition metal dichalcogenide that lacks structural inversion symmetry, the valley contrasting properties, particularly the magnetic moment and Berry curvature, offer the possibility to create a population imbalance between the two valleys simply with an external optical field. With the circular photogalvanic effect, the generation of the spin-valley-coupled photocurrent has been demonstrated in chalcogenides. Continuously tuning the valley-polarized current so far has remained largely unexplored in monolayer devices. Here we show the voltage-tunable photocurrent polarization can be achieved in monolayer MoS2 where electric field facilitates the disassociation of excitons and the carrier drift. Gating that modulates the contact barrier and carrier density can switch the monolayer photocurrent polarization on and off with a large valley-polarized current on-off ratio greater than 103. The efficient electrical tuning of valley-polarized photocurrent opens new possibilities for exploiting polarized currents in monolayer semiconductor devices. This work is supported by the National Science Foundation MRSEC program (DMR-1121262) and the U.S. Department of Energy (BES DE-SC0012130). N.P.S. is an Alfred P. Sloan Research Fellow.

Fuel Cell Buses in U.S. Transit Fleets: Current Status 2016

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eudy, Leslie; Post, Matthew; Jeffers, Matthew

This report, published annually, summarizes the progress of fuel cell electric bus development in the United States and discusses the achievements and challenges of introducing fuel cell propulsion in transit. The report provides a summary of results from evaluations performed by the National Renewable Energy Laboratory. Funding for this effort is provided by the U.S. Department of Energy's Fuel Cell Technologies Office within the Office of Energy Efficiency and Renewable Energy and by the U.S. Department of Transportation's Federal Transit Administration. The 2016 summary results primarily focus on the most recent year for each demonstration, from August 2015 through Julymore » 2016. The results for these buses account for more than 550,000 miles traveled and 59,500 hours of fuel cell power system operation. The primary results presented in the report are from three demonstrations of two different fuel-cell-dominant bus designs: Zero Emission Bay Area Demonstration Group led by Alameda-Contra Costa Transit District (AC Transit) in California; American Fuel Cell Bus Project at SunLine Transit Agency in California; and American Fuel Cell Bus Project at the University of California at Irvine.« less

Assessing Uncertainties in Boundary Layer Transition Predictions for HIFiRE-1 at Non-zero Angles of Attack

NASA Technical Reports Server (NTRS)

Marek, Lindsay C.

2011-01-01

Boundary layer stability was analyzed for the HIFiRE-1 flight vehicle geometry for ground tests conducted at the CUBRC LENS I hypersonic shock test facility and the Langley Research Center (LaRC) 20- inch Mach 6 Tunnel. Boundary layer stability results were compared to transition onset location obtained from discrete heat transfer measurements from thin film gauges during the CUBRC test and spatially continuous heat transfer measurements from thermal phosphor paint data during the LaRC test. The focus of this analysis was on conditions at non-zero angles of attack as stability analysis has already been performed at zero degrees angle of attack. Also, the transition onset data obtained during flight testing was at nonzero angles of attack, so this analysis could be expanded in the future to include the results of the flight test data. Stability analysis was performed using the 2D parabolized stability software suite STABL (Stability and Transition Analysis for Hypersonic Boundary Layers) developed at the University of Minnesota and the mean flow solutions were computed using the DPLR finite volume Navier-Stokes computational fluid dynamics (CFD) solver. A center line slice of the 3D mean flow solution was used for the stability analysis to incorporate the angle of attack effects while still taking advantage of the 2D STABL software suite. The N-factors at transition onset and the value of Re(sub theta)/M(sub e), commonly used to predict boundary layer transition onset, were compared for all conditions analyzed. Ground test data was analyzed at Mach 7.2 and Mach 6.0 and angles of attack of 1deg, 3deg and 5deg. At these conditions, the flow was found to be second mode dominant for the HIFiRE-1 slender cone geometry. On the leeward side of the vehicle, a strong trend of transition onset location with angle of attack was observed as the boundary layer on the leeward side of the vehicle developed inflection points at streamwise positions on the vehicle that correlated to

Interface potential sensing from adsorption of human serum albumin (HSA) on carbon nanotube (CNT) monitored by zero current potentiometry for HSA determination.

PubMed

Wang, Huan; Wu, Yi; Song, Jun-Feng

2015-10-15

In this work, the adsorption of human serum albumin (HSA) on the bare multiwall carbon nanotube (MWNT) was investigated by a new electrochemical method, termed as zero current potentiometry. For this, a MWNT strip was prepared by directly adhering MWNTs on the transparent adhesive tape surface. Moreover, when HSA adsorbed onto MWNT at the MWNT/solution interface, an interface potential Ψ yielded. The interface potential Ψ as the zero current potential Ezcp simply related to it was monitored by zero current potentiometry. The relationship between the zero current potential Ezcp, the HSA concentration and others was established in simple stoichiometric relation. Based on this, both the adsorption of HSA on MWNT and the HSA determination can be studied. For the HSA determination, the theoretic conclusion consisted with experimental results. The zero current potential Ezcp was proportional to the HSA concentration in the range of 2.8 × 10(-8) - 3.4 × 10(-7)M with the limit of detection 2 × 10(-8)M. The linear regression equation was Ezcp/V (vs, SCE) = (0.159 ± 0.01) + (0.358 ± 0.02) × 10(6)CHSA (µM). This determination was fast, high sensitive and good selective. Copyright © 2015 Elsevier B.V. All rights reserved.

Tunable dielectric response, resistive switching, and unconventional transport in SrTiO3

NASA Astrophysics Data System (ADS)

Mikheev, Evgeny

The first section of this thesis discusses integration of SR TiO3 grown by molecular beam epitaxy (MBE) in vertical device structures. One target application is as a tunable dielectric. Parallel plate capacitors based on epitaxial Pt(001) bottom electrodes and (Ba,Sr)TiO 3 dielectric layers grown by MBE are demonstrated. Optimization of structural quality of the vertical stack is shown to produce very low dielectric loss combined with very high tunability of the dielectric constant by DC bias. This results in considerable improvement of common figures of merit for varactor performance in comparison to previous reports. Another target application for transition metals oxides is in resistive switching memories, which are based on the hysteretic current-voltage response observed in many oxide-based Schottky junctions and capacitors. A study on the role of metal/oxide interface quality is presented. In particular, the use of epitaxial Pt(001) as Schottky contacts to Nb:SRTiO 3 is shown to suppress resistive switching hysteresis by eliminating unintentional contributions to interface capacitance. Such uncontrolled factors are discussed as a probable root cause for poor reproducibility in resistive switching memories, currently a ubiquitous challenge in the field. Potential routes towards stabilizing reproducible switching through intentional control of defect densities in high-quality structures are discussed, including a proof of concept demonstration using Schottky junctions incorporating intentionally non-stoichiometric SRTiO3 interlayers grown by MBE. The second section of this thesis is concerned with unconventional electronic transport in SRTiO3. A systematic description of scattering mechanisms will be presented for three related material systems: uniformly-doped SRTiO3, two-dimensional electron liquids (2DEL) at SRTiO3/RTiO 3 interfaces (R = Gd, Sm) and confined 2DELs in RTiO3/SRTiO3/ RTiO3 quantum wells. In particular, the prevalence of a well-defined T2

Mechanisms driving the lactate switch in Chinese hamster ovary cells.

PubMed

Hartley, Fiona; Walker, Tracy; Chung, Vicky; Morten, Karl

2018-03-31

The metabolism of Chinese Hamster Ovary (CHO) cells in a production environment has been extensively investigated. However, a key metabolic transition, the switch from lactate production to lactate consumption, remains enigmatic. Though commonly observed in CHO cultures, the mechanism(s) by which this metabolic shift is triggered is unknown. Despite this, efforts to control the switch have emerged due to the association of lactate consumption with improved cell growth and productivity. This review aims to consolidate current theories surrounding the lactate switch. The influence of pH, NAD + /NADH, pyruvate availability and mitochondrial function on lactate consumption are explored. A hypothesis based on the cellular redox state is put forward to explain the onset of lactate consumption. Various techniques implemented to control the lactate switch, including manipulation of the culture environment, genetic engineering, and cell line selection are also discussed. © 2018 Wiley Periodicals, Inc.

A Current Source Method For t(sub q) Measurement of Fast Switching Thyristors

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

2006-01-01

A current source driven circuit has been constructed to measure the turn-off time (t(sub q)) of fast-switching SiC thyristors. This circuit operates from a single power supply and a dual channel pulse generator to provide adjustment of forward current, magnitude and duration of reverse applied voltage, and rate of rise of reapplied forward voltage. Values of t(sub q) down to 100 ns can be resolved.

Design concept for pressure switch calibrator

NASA Technical Reports Server (NTRS)

Slingerland, M. G.

1966-01-01

Calibrator and switch design enables pressure switches to operate under 150 g shock loads. The design employs a saturated liquid-to-vapor phase transition at constant pressure to produce a known force independent of displacement over a usable range.

The Implementation Of Solid State Switches In A Parallel Configuration To Gain Output Current Capacity In A High Current Capacitive Discharge Unit (CDU).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaves, Mario Paul

2017-07-01

For my project I have selected to research and design a high current pulse system, which will be externally triggered from a 5V pulse. The research will be conducted in the region of paralleling the solid state switches for a higher current output, as well as to see if there will be any other advantages in doing so. The end use of the paralleled solid state switches will be used on a Capacitive Discharge Unit (CDU). For the first part of my project, I have set my focus on the design of the circuit, selection of components, and simulation ofmore » the circuit.« less

Binary-Signal Recovery

NASA Technical Reports Server (NTRS)

Griebeler, Elmer L.

2011-01-01

Binary communication through long cables, opto-isolators, isolating transformers, or repeaters can become distorted in characteristic ways. The usual solution is to slow the communication rate, change to a different method, or improve the communication media. It would help if the characteristic distortions could be accommodated at the receiving end to ease the communication problem. The distortions come from loss of the high-frequency content, which adds slopes to the transitions from ones to zeroes and zeroes to ones. This weakens the definition of the ones and zeroes in the time domain. The other major distortion is the reduction of low frequency, which causes the voltage that defines the ones or zeroes to drift out of recognizable range. This development describes a method for recovering a binary data stream from a signal that has been subjected to a loss of both higher-frequency content and low-frequency content that is essential to define the difference between ones and zeroes. The method makes use of the frequency structure of the waveform created by the data stream, and then enhances the characteristics related to the data to reconstruct the binary switching pattern. A major issue is simplicity. The approach taken here is to take the first derivative of the signal and then feed it to a hysteresis switch. This is equivalent in practice to using a non-resonant band pass filter feeding a Schmitt trigger. Obviously, the derivative signal needs to be offset to halfway between the thresholds of the hysteresis switch, and amplified so that the derivatives reliably exceed the thresholds. A transition from a zero to a one is the most substantial, fastest plus movement of voltage, and therefore will create the largest plus first derivative pulse. Since the quiet state of the derivative is sitting between the hysteresis thresholds, the plus pulse exceeds the plus threshold, switching the hysteresis switch plus, which re-establishes the data zero to one transition

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

The modelling of an SF6 arc in a supersonic nozzle: II. Current zero behaviour of the nozzle arc

NASA Astrophysics Data System (ADS)

Zhang, Q.; Liu, J.; Yan, J. D.; Fang, M. T. C.

2016-08-01

The present work (part II) forms the second part of an investigation into the behaviour of SF6 nozzle arc. It is concerned with the aerodynamic and electrical behaviour of a transient nozzle arc under a current ramp specified by a rate of current decay (di/dt) before current zero and a voltage ramp (dV/dt) after current zero. The five flow models used in part I [1] for cold gas flow and DC nozzle arcs have been applied to study the transient arc at three stagnation pressures (P 0) and two values of di/dt for the current ramp, representing a wide range of arcing conditions. An analysis of the physical mechanisms encompassed in each flow model is given with an emphasis on the adequacy of a particular model in describing the rapidly varying arc around current zero. The critical rate of rise of recovery voltage (RRRV) is found computationally and compared with test results of Benenson et al [2]. For transient nozzle arcs, the RRRV is proportional to the square of P 0, rather than to the square root of P 0 for DC nozzle arcs. The physical mechanisms responsible for the strong dependence of RRRV on P 0 have been investigated. The relative merits of the flow models employed are discussed.

Performance optimization of a photovoltaic chain conversion by the PWM control

NASA Astrophysics Data System (ADS)

Rezoug, M. R.; Chenni, R.

2017-02-01

The interest of the research technique of maximum power point tracking, exposed by this article, lays in the fact of work instantly on the real characteristic of the photovoltaic module. This work is based on instantaneous measurements of its terminals' current & voltage as well as the exploitation of the characteristic "Power - Duty Cycle" to define rapidly the Duty cycle in which power reaches its maximum value. To ensure instantaneous tracking of the point of maximum power, we use "DC/DC Converter" based on "Pulse Wave Modulation's (PWM) Command" controlled by an algorithm implanted in a microcontroller's memory. This algorithm responds to the quick changes in climate (sunlight and temperature). To identify the control parameters "VPV & IPV" at any change in operating conditions, sensors are projected. this algorithm applied to the Duty cycle of the static converter enables the control of power supplied by the photovoltaic generator thanks to oscillatory movement around the MPP. Our article highlights the importance of this technique which lays in its simplicity and performance in changing climatic conditions. This efficiency is confirmed by experimental tests and this technique will improve its predecessors.

Electrical switching and oscillations in vanadium dioxide

NASA Astrophysics Data System (ADS)

Pergament, Alexander; Velichko, Andrey; Belyaev, Maksim; Putrolaynen, Vadim

2018-05-01

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10 × 10 nm, Fmax can reach the value of 300 MHz at a film thickness of 20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts 13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1-5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hong-bo, E-mail: walkman67@163.com; Liu, Jin-liang

2014-04-15

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid innermore » surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.« less

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

PubMed

Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-01-06

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

PWM Inverter with Voltage Boosters with Regenerating Capability Augmented by Electric Double-Layer Capacitor

NASA Astrophysics Data System (ADS)

Yamamoto, Kichiro; Imakiire, Akihiro; Iimori, Kenichi

An interior permanent magnet (IPM) motor drive system which has regenerating capability augmented by electric double-layer capacitors (EDLCs) is proposed. In the proposed system, EDLCs are arranged in series with batteries so that a lesser number of the EDLCs and batteries will be required. The proposed system has two bi-directional voltage boosters: one is for both the batteries and EDLCs to control the dc-link voltage of a PWM inverter and the other is for only the EDLCs and is used to control the energy flow from and to the EDLCs. In this paper, a strategy to control the energy flow to and from the EDLCs is explained and its effectiveness is confirmed by simulation and experimental results. Furthermore, the efficiencies of the voltage booster, inverter, PM motor, and whole system are measured for the system with the basic configuration, i.e., which consists of only one bi-directional voltage booster and PWM inverter. Then, the steady-state characteristics are determined. Finally, the efficiency of the voltage boosters in the proposed system is determined, and the advantage of the proposed PM motor drive system is discussed.

Thermionic gas switch

DOEpatents

Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

1984-04-05

The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

Switching Phenomena in a System with No Switches

NASA Astrophysics Data System (ADS)

Preis, Tobias; Stanley, H. Eugene

2010-02-01

It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

Thermal diodes, regulators, and switches: Physical mechanisms and potential applications

NASA Astrophysics Data System (ADS)

Wehmeyer, Geoff; Yabuki, Tomohide; Monachon, Christian; Wu, Junqiao; Dames, Chris

2017-12-01

Interest in new thermal diodes, regulators, and switches has been rapidly growing because these components have the potential for rich transport phenomena that cannot be achieved using traditional thermal resistors and capacitors. Each of these thermal components has a signature functionality: Thermal diodes can rectify heat currents, thermal regulators can maintain a desired temperature, and thermal switches can actively control the heat transfer. Here, we review the fundamental physical mechanisms of switchable and nonlinear heat transfer which have been harnessed to make thermal diodes, switches, and regulators. The review focuses on experimental demonstrations, mainly near room temperature, and spans the fields of heat conduction, convection, and radiation. We emphasize the changes in thermal properties across phase transitions and thermal switching using electric and magnetic fields. After surveying fundamental mechanisms, we present various nonlinear and active thermal circuits that are based on analogies with well-known electrical circuits, and analyze potential applications in solid-state refrigeration and waste heat scavenging.

Transitioning to Zero Freshwater Withdrawal for Thermoelectric Generation

NASA Astrophysics Data System (ADS)

Macknick, J.; Tidwell, V. C.; Zemlick, K. M.; Sanchez, J.; Woldeyesus, T.

2013-12-01

The electricity sector is the largest withdrawer of freshwater in the United States. The primary demand for water from the electricity sector is for cooling thermoelectric power plants. Droughts and potential changes in water resources resulting from climate change pose important risks to thermoelectric power production in the United States. Power plants can minimize risk in a variety of ways. One method of reducing risk is to move away from dependency on freshwater resources. Here a scoping level analysis is performed to identify the technical tradeoffs and initial cost estimates for retrofitting all existing steam-powered generation to achieve zero freshwater withdrawal. Specifically, the conversion of existing freshwater-cooled plants to dry cooling or a wet cooling system utilizing non-potable water is considered. The least cost alternative is determined for each of the 1,178 freshwater using power plants in the United States. The use of non-potable water resources, such as municipal wastewater and shallow brackish groundwater, is considered based on the availability and proximity of those resources to the power plant, as well as the costs to transport and treat those resources to an acceptable level. The projected increase in levelized cost of electricity due to power plant retrofits ranges roughly from 0.20 to 20/MWh with a median value of 3.53/MWh. With a wholesale price of electricity running about 35/MWh, many retrofits could be accomplished at levels that would add less than 10% to current power plant generation expenses. Such retrofits could alleviate power plant vulnerabilities to thermal discharge limits in times of drought (particularly in the East) and would save 3.2 Mm3/d of freshwater consumption in watersheds with limited water availability (principally in the West). The estimated impact of retrofits on wastewater and brackish water supply is minimal requiring only a fraction of the available resource. Total parasitic energy requirements to

Design of power electronics for TVC EMA systems

NASA Technical Reports Server (NTRS)

Nelms, R. Mark

1993-01-01

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Digital switched hydraulics

NASA Astrophysics Data System (ADS)

Pan, Min; Plummer, Andrew

2018-06-01

This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

State Switching of the X-Ray/Radio Transitional Millisecond Pulsar

NASA Astrophysics Data System (ADS)

Shang, Lun-Hua; Zhang, Cheng-Min; Li, Di; Wang, De-Hua; Wang, Shuang-Qiang; Wang, Pei; Pan, Yuan-Yue; Yang, Yi-Yan; Zhi, Qi-Jun

2017-11-01

PSR J1023+0038 is a known transitional pulsar, which switches between the accretion-powered X-ray pulsar state and the rotation-powered radio millisecond pulsar (MSP) state. Here, we study the conditions for its state transition by ascribing ˜GHz radio pulse emission to the plasma cutoff oscillation frequency at the magnetosphere, which depends on the plasma density or accretion rate. With the accretion X-ray luminosity declining fromhigh to low state (e.g., ˜ {10}35 erg s-1 to ˜ {10}32 erg s-1), the magnetosphere boundary expands to the light cylinder, where the plasma density is low enough to permit the emission of radio waves at the several-GHz frequency band. Thus, for a sufficiently low accretion-rate state (˜ {10}32 erg s-1), the radio emission at the several-GHz band is not blocked by the plasma, and the radio pulsar can be detected in the favored “observational windows,” I.e., the L band (1-2 GHz), S band (2-4 GHz), and C band (4-8 GHz). Furthermore, to evaluate the penetration characteristics of the outgoing radio wave of low frequency, we calculate its skin depth, which is found to be a couple of centimeters for the low X-ray luminosity of {10}34{--}{10}32 erg s-1, a scale that is much shorter than the light cylinder radius of about 100 km for MSPs.

Low Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Anglada-Sanchez, Carlos R.; Perez-Feliciano, David; Ray, Biswajit

1997-01-01

The low temperature operation of a 48 W, 50 kHz, 36/12 V pulse width modulated (PWM) buck de-de power converter designed with standard commercially available components and devices is reported. The efficiency of the converter increased from 85.6% at room temperature (300 K) to 92.0% at liquid nitrogen temperature (77 K). The variation of power MOSFET, diode rectifier, and output filter inductor loss with temperature is discussed. Relevant current, voltage. and power waveforms are also included.

Fuel Cell Buses in U.S. Transit Fleets: Current Status 2017

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eudy, Leslie; Post, Matthew B

This report, published annually, summarizes the progress of fuel cell electric bus (FCEB) development in the United States and discusses the achievements and challenges of introducing fuel cell propulsion in transit. The report provides a summary of results from evaluations performed by the National Renewable Energy Laboratory. This annual status report combines results from all FCEB demonstrations, tracks the progress of the FCEB industry toward meeting technical targets, documents the lessons learned, and discusses the path forward for commercial viability of fuel cell technology for transit buses. These data and analyses help provide needed information to guide future early-stage researchmore » and development. The 2017 summary results primarily focus on the most recent year for each demonstration, from August 2016 through July 2017. The primary results presented in the report are from five demonstrations of two different fuel-cell-dominant bus designs: Zero Emission Bay Area Demonstration Group led by Alameda-Contra Costa Transit District (AC Transit) in California; American Fuel Cell Bus (AFCB) Project at SunLine Transit Agency in California; AFCB Project at the University of California at Irvine; AFCB Project at Orange County Transportation Authority; and AFCB Project at Massachusetts Bay Transportation Authority.« less

Prediction of SFL Interruption Performance from the Results of Arc Simulation during High-Current Phase

NASA Astrophysics Data System (ADS)

Lee, Jong-Chul; Lee, Won-Ho; Kim, Woun-Jea

2015-09-01

The design and development procedures of SF6 gas circuit breakers are still largely based on trial and error through testing although the development costs go higher every year. The computation cannot cover the testing satisfactorily because all the real processes arc not taken into account. But the knowledge of the arc behavior and the prediction of the thermal-flow inside the interrupters by numerical simulations are more useful than those by experiments due to the difficulties to obtain physical quantities experimentally and the reduction of computational costs in recent years. In this paper, in order to get further information into the interruption process of a SF6 self-blast interrupter, which is based on a combination of thermal expansion and the arc rotation principle, gas flow simulations with a CFD-arc modeling are performed during the whole switching process such as high-current period, pre-current zero period, and current-zero period. Through the complete work, the pressure-rise and the ramp of the pressure inside the chamber before current zero as well as the post-arc current after current zero should be a good criterion to predict the short-line fault interruption performance of interrupters.

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy.

PubMed

Zhao, Shishun; Wang, Lei; Zhou, Ziyao; Li, Chunlei; Dong, Guohua; Zhang, Le; Peng, Bin; Min, Tai; Hu, Zhongqiang; Ma, Jing; Ren, Wei; Ye, Zuo-Guang; Chen, Wei; Yu, Pu; Nan, Ce-Wen; Liu, Ming

2018-05-29

Electric field (E-field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy-efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin-reorientation transition (SRT) that allows the magnetic moment rotating between the out-of-plane and the in-plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME] + [TFSI] - /Pt/(Co/Pt) 2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V -1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out-of-plane and in-plane directions via IL gating. The key mechanism, revealed by the first-principles calculation, is that the IL gating process influences the interfacial spin-orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in-plane/out-of-plane magnetization switching. This work demonstrates a unique IL-gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlling thermal emission with refractory epsilon-near-zero metamaterials via topological transitions

NASA Astrophysics Data System (ADS)

Dyachenko, P. N.; Molesky, S.; Petrov, A. Yu; Störmer, M.; Krekeler, T.; Lang, S.; Ritter, M.; Jacob, Z.; Eich, M.

2016-06-01

Control of thermal radiation at high temperatures is vital for waste heat recovery and for high-efficiency thermophotovoltaic (TPV) conversion. Previously, structural resonances utilizing gratings, thin film resonances, metasurfaces and photonic crystals were used to spectrally control thermal emission, often requiring lithographic structuring of the surface and causing significant angle dependence. In contrast, here, we demonstrate a refractory W-HfO2 metamaterial, which controls thermal emission through an engineered dielectric response function. The epsilon-near-zero frequency of a metamaterial and the connected optical topological transition (OTT) are adjusted to selectively enhance and suppress the thermal emission in the near-infrared spectrum, crucial for improved TPV efficiency. The near-omnidirectional and spectrally selective emitter is obtained as the emission changes due to material properties and not due to resonances or interference effects, marking a paradigm shift in thermal engineering approaches. We experimentally demonstrate the OTT in a thermally stable metamaterial at high temperatures of 1,000 °C.

Controlling thermal emission with refractory epsilon-near-zero metamaterials via topological transitions

PubMed Central

Dyachenko, P. N.; Molesky, S.; Petrov, A. Yu; Störmer, M.; Krekeler, T.; Lang, S.; Ritter, M.; Jacob, Z.; Eich, M.

2016-01-01

Control of thermal radiation at high temperatures is vital for waste heat recovery and for high-efficiency thermophotovoltaic (TPV) conversion. Previously, structural resonances utilizing gratings, thin film resonances, metasurfaces and photonic crystals were used to spectrally control thermal emission, often requiring lithographic structuring of the surface and causing significant angle dependence. In contrast, here, we demonstrate a refractory W-HfO2 metamaterial, which controls thermal emission through an engineered dielectric response function. The epsilon-near-zero frequency of a metamaterial and the connected optical topological transition (OTT) are adjusted to selectively enhance and suppress the thermal emission in the near-infrared spectrum, crucial for improved TPV efficiency. The near-omnidirectional and spectrally selective emitter is obtained as the emission changes due to material properties and not due to resonances or interference effects, marking a paradigm shift in thermal engineering approaches. We experimentally demonstrate the OTT in a thermally stable metamaterial at high temperatures of 1,000 °C. PMID:27263653

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

NASA Astrophysics Data System (ADS)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Characteristics of switching plasma in an inverse-pinch switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Venable, Demetrius D.; Han, Kwang S.; Nam, Sang H.

1993-01-01

Characteristics of the plasma that switches on tens of giga volt-ampere in an inverse-pinch plasma switch (INPIStron) have been made. Through optical and spectroscopic diagnostics of the current carrying plasma, the current density, the motion of current paths, dominant ionic species have been determined in order to access their effects on circuit parameters and material erosion. Also the optimum operational condition of the plasma-puff triggering method required for azimuthally uniform conduction in the INPIStron has been determined.

Spin-current probe for phase transition in an insulator

DOE PAGES

Qiu, Zhiyong; Li, Jia; Hou, Dazhi; ...

2016-08-30

Spin fluctuation and transition have always been one of the central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron-scattering process, which is represented by dynamical magnetic susceptibility and maximized at phase transitions. Importantly, a neutron carries spin without electric charge, and therefore it can bring spin into a sample without being disturbed by electric energy. However, large facilities such as a nuclear reactor are necessary. Here we present that spin pumping, frequently used in nanoscale spintronic devices, provides a desktop microprobe for spin transition; spin current is amore » flux of spin without an electric charge and its transport reflects spin excitation. Additionally, we demonstrate detection of antiferromagnetic transition in ultra-thin CoO films via frequency-dependent spin-current transmission measurements, which provides a versatile probe for phase transition in an electric manner in minute devices.« less

Two-dimensional electron density characterisation of arc interruption phenomenon in current-zero phase

NASA Astrophysics Data System (ADS)

Inada, Yuki; Kamiya, Tomoki; Matsuoka, Shigeyasu; Kumada, Akiko; Ikeda, Hisatoshi; Hidaka, Kunihiko

2018-01-01

Two-dimensional electron density imaging over free burning SF6 arcs and SF6 gas-blast arcs was conducted at current zero using highly sensitive Shack-Hartmann type laser wavefront sensors in order to experimentally characterise electron density distributions for the success and failure of arc interruption in the thermal reignition phase. The experimental results under an interruption probability of 50% showed that free burning SF6 arcs with axially asymmetric electron density profiles were interrupted with a success rate of 88%. On the other hand, the current interruption of SF6 gas-blast arcs was reproducibly achieved under locally reduced electron densities and the interruption success rate was 100%.

Remote switch actuator

DOEpatents

Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

2013-01-29

The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

NASA Astrophysics Data System (ADS)

Wu, Mingzhong

As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

The Role of Response Repetition in Task Switching

ERIC Educational Resources Information Center

Cooper, Stephen; Mari-Beffa, Paloma

2008-01-01

When switching between tasks, participants are sometimes required to use different response sets for each task. Thus, task switch and response set switch are confounded. In 5 experiments, the authors examined transitions of response within a linear 4-finger arrangement. A random baseline condition was compared with the cuing of specific response…

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

NASA Astrophysics Data System (ADS)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Lim, Herianto; Stavrias, Nikolas; Johnson, Brett C.; Marvel, Robert E.; Haglund, Richard F.; McCallum, Jeffrey C.

2014-03-01

Vanadium dioxide (VO2) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator-to-metal transition, the phase transition in VO2 can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO2 with erbium ions (Er3+) and observe their combined properties. The first excited-state luminescence of Er3+ lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er3+ into VO2 could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO2 thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO2 by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ˜800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO2 thin films. We conclude that Er-implanted VO2 can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO2.

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

PubMed Central

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

2016-01-01

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2–based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology. PMID:26880381

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

NASA Astrophysics Data System (ADS)

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

2016-02-01

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

Multilevel DC link inverter

DOEpatents

Su, Gui-Jia

2003-06-10

A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

Multiphase power supply when inverting currents for group of Peltier elements

NASA Astrophysics Data System (ADS)

Osintsev, A. V.; Sobko, A. A.; Komnatnov, M. E.

2018-05-01

The use of multiphase power supply of a group of Peltier elements (PE) is considered to reduce the load on the power source. Schemes and a control layout with the use of the H-bridge, allowing the invert of the current through the PE, are given. The analysis of the operation of the used H-bridges and PE in the frequency range of the control PWM signal from 30 Hz to 32 kHz is performed. The algorithm for monitoring the current sensors is presented and the time diagrams of the currents are represented through the PE and H-bridges using a two-phase and four-phase control PWM signal for one, two and four phases of the supply. The results showed stable heating and cooling of the PE at frequencies from 30 Hz to 1 kHz. The use of multiphase power supply of PE made it possible to significantly reduce the load on the power source.

Achieving Zero Current for Polar Wind Outflow on Open Flux Tubes Subjected to Large Photoelectron Fluxes

NASA Technical Reports Server (NTRS)

Wilson, G. R.; Khazanov, G.; Horwitz, J. L.

1997-01-01

In this study we investigate how the condition of zero current on open flux tubes with polar wind outflow, subjected to large photoelectron fluxes, can be achieved. We employ a steady state collisionless semikinetic model to determine the density profiles of O(+), H(+), thermal electrons and photoelectrons coming from the ionosphere along with H(+), ions and electrons coming from the magnetosphere. The model solution attains a potential distribution which both satisfies the condition of charge neutrality and zero current. For the range of parameters considered in this study we find that a 45-60 volt discontinuous potential drop may develop to reflect most of the photoelectrons back toward the ionosphere. This develops because the downward flux of electrons from the magnetosphere to the ionosphere on typical open flux tubes (e.g. the polar rain) appears to be insufficient to balance the photoelectron flux from the ionosphere.

Breakdown of Zero-Energy Quantum Hall State in Graphene in the Light of Current Fluctuations and Shot Noise

NASA Astrophysics Data System (ADS)

Laitinen, Antti; Kumar, Manohar; Elo, Teemu; Liu, Ying; Abhilash, T. S.; Hakonen, Pertti J.

2018-06-01

We have investigated the cross-over from Zener tunneling of single charge carriers to avalanche type of bunched electron transport in a suspended graphene Corbino disk in the zeroth Landau level. At low bias, we find a tunneling current that follows the gyrotropic Zener tunneling behavior. At larger bias, we find an avalanche type of transport that sets in at a smaller current the larger the magnetic field is. The low-frequency noise indicates strong bunching of the electrons in the avalanches. On the basis of the measured low-frequency switching noise power, we deduce the characteristic switching rates of the avalanche sequence. The simultaneous microwave shot noise measurement also reveals intrinsic correlations within the avalanche pulses and indicate a decrease in correlations with increasing bias.

Realization of zero-field skyrmions with high-density via electromagnetic manipulation in Pt/Co/Ta multilayers

NASA Astrophysics Data System (ADS)

He, Min; Peng, Licong; Zhu, Zhaozhao; Li, Gang; Cai, Jianwang; Li, Jianqi; Wei, Hongxiang; Gu, Lin; Wang, Shouguo; Zhao, Tongyun; Shen, Baogen; Zhang, Ying

2017-11-01

Taking advantage of the electron-current ability to generate, stabilize, and manipulate skyrmions prompts the application of skyrmion multilayers in room-temperature spintronic devices. In this study, the robust high-density skyrmions are electromagnetically generated from Pt/Co/Ta multilayers using Lorentz transmission electron microscopy. The skyrmion density is tunable and can be significantly enhanced. Remarkably, these generated skyrmions after optimized manipulation sustain at zero field with both the in-plane current and perpendicular magnetic field being switched off. The skyrmion generation and manipulation method demonstrated in this study opens up an alternative way to engineer skyrmion-based devices. The results also provide key data for further theoretical study to discover the nature of the interaction between the electric current and different spin configurations.

First-order metal-insulator transitions in vanadates from first principles

NASA Astrophysics Data System (ADS)

Kumar, Anil; Rabe, Karin

2013-03-01

Materials that exhibit first-order metal-insulator transitions, with the accompanying abrupt change in the conductivity, have potential applications as switches in future electronic devices. Identification of materials and exploration of the atomic-scale mechanisms for switching between the two electronic states is a focus of current research. In this work, we search for first-order metal-insulator transitions in transition metal compounds, with a particular focus on d1 and d2 systems, by using first principles calculations to screen for an alternative low-energy state having not only a electronic character opposite to that of the ground state, but a distinct structure and/or magnetic ordering which would permit switching by an applied field or stress. We will present the results of our investigation of the perovskite compounds SrVO3, LaVO3, CaVO3, YVO3, LaTiO3 and related layered phase, including superlattices and Ruddlesden-Popper phases. While the pure compounds do not satisfy the search criteria, the layered phases show promising results.

Optically triggered high voltage switch network and method for switching a high voltage

DOEpatents

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Promotion of well-switching to mitigate the current arsenic crisis in Bangladesh.

PubMed Central

Van Geen, Alexander; Ahsan, Habibul; Horneman, Allan H.; Dhar, Ratan K.; Zheng, Yan; Hussain, Iftikhhar; Ahmed, Kazi Matin; Gelman, Andrew; Stute, Martin; Simpson, H. James; Wallace, Sean; Small, Christopher; Parvez, Faruque; Slavkovich, Vesna; Loiacono, Nancy J.; Becker, Marck; Cheng, Zhongqi; Momotaj, Hassina; Shahnewaz, Mohammad; Seddique, Ashraf Ali; Graziano, Joseph H.

2002-01-01

OBJECTIVE: To survey tube wells and households in Araihazar upazila, Bangladesh, to set the stage for a long-term epidemiological study of the consequences of chronic arsenic exposure. METHODS: Water samples and household data were collected over a period of 4 months in 2000 from 4997 contiguous tube wells serving a population of 55000, the position of each well being determined to within +/- 30 m using Global Positioning System receivers. Arsenic concentrations were determined by graphite-furnace atomic-absorption spectrometry. In addition, groundwater samples collected every 2 weeks for an entire year from six tube wells were analysed for arsenic by high-resolution inductively coupled plasma-mass spectrometry. FINDINGS: Half of the wells surveyed in Araihazar had been installed in the previous 5 years; 94% were privately owned. Only about 48% of the surveyed wells supplied water with an arsenic content below 50 micro g/l, the current Bangladesh standard for drinking-water. Similar to other regions of Bangladesh and West Bengal, India, the distribution of arsenic in Araihazar is spatially highly variable (range: 5-860 micro g/l) and therefore difficult to predict. Because of this variability, however, close to 90% of the inhabitants live within 100 m of a safe well. Monitoring of six tube wells currently meeting the 50 micro g/l standard showed no indication of a seasonal cycle in arsenic concentrations coupled to the hydrological cycle. This suggests that well-switching is a viable option in Araihazar, at least for the short term. CONCLUSIONS: Well-switching should be more systematically encouraged in Araihazar and many other parts of Bangladesh and West Bengal, India. Social barriers to well-switching need to be better understood and, if possible, overcome. PMID:12378292

Blue diode-pumped solid-state-laser based on ytterbium doped laser crystals operating on the resonance zero-phonon transition

DOEpatents

Krupke, William F.; Payne, Stephen A.; Marshall, Christopher D.

2001-01-01

The invention provides an efficient, compact means of generating blue laser light at a wavelength near .about.493+/-3 nm, based on the use of a laser diode-pumped Yb-doped laser crystal emitting on its zero phonon line (ZPL) resonance transition at a wavelength near .about.986+/-6 nm, whose fundamental infrared output radiation is harmonically doubled into the blue spectral region. The invention is applied to the excitation of biofluorescent dyes (in the .about.490-496 nm spectral region) utilized in flow cytometry, immunoassay, DNA sequencing, and other biofluorescence instruments. The preferred host crystals have strong ZPL fluorecence (laser) transitions lying in the spectral range from .about.980 to .about.992 nm (so that when frequency-doubled, they produce output radiation in the spectral range from 490 to 496 nm). Alternate preferred Yb doped tungstate crystals, such as Yb:KY(WO.sub.4).sub.2, may be configured to lase on the resonant ZPL transition near 981 nm (in lieu of the normal 1025 nm transition). The laser light is then doubled in the blue at 490.5 nm.

High-power microstrip switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1974-01-01

Switch, which uses only two p-i-n diodes on microstrip substrate, has been developed for application in spacecraft radio systems. Switch features improved power drain, weight, volume, magnetic cleanliness, and reliability, over currently-used circulator and electromechanical switches.

Switch failure diagnosis based on inductor current observation for boost converters

NASA Astrophysics Data System (ADS)

Jamshidpour, E.; Poure, P.; Saadate, S.

2016-09-01

Face to the growing number of applications using DC-DC power converters, the improvement of their reliability is subject to an increasing number of studies. Especially in safety critical applications, designing fault-tolerant converters is becoming mandatory. In this paper, a switch fault-tolerant DC-DC converter is studied. First, some of the fastest Fault Detection Algorithms (FDAs) are recalled. Then, a fast switch FDA is proposed which can detect both types of failures; open circuit fault as well as short circuit fault can be detected in less than one switching period. Second, a fault-tolerant converter which can be reconfigured under those types of fault is introduced. Hardware-In-the-Loop (HIL) results and experimental validations are given to verify the validity of the proposed switch fault-tolerant approach in the case of a single switch DC-DC boost converter with one redundant switch.

An inductance Fourier decomposition-based current-hysteresis control strategy for switched reluctance motors

NASA Astrophysics Data System (ADS)

Hua, Wei; Qi, Ji; Jia, Meng

2017-05-01

Switched reluctance machines (SRMs) have attracted extensive attentions due to the inherent advantages, including simple and robust structure, low cost, excellent fault-tolerance and wide speed range, etc. However, one of the bottlenecks limiting the SRMs for further applications is its unfavorable torque ripple, and consequently noise and vibration due to the unique doubly-salient structure and pulse-current-based power supply method. In this paper, an inductance Fourier decomposition-based current-hysteresis-control (IFD-CHC) strategy is proposed to reduce torque ripple of SRMs. After obtaining a nonlinear inductance-current-position model based Fourier decomposition, reference currents can be calculated by reference torque and the derived inductance model. Both the simulations and experimental results confirm the effectiveness of the proposed strategy.

A PWM Buck Converter With Load-Adaptive Power Transistor Scaling Scheme Using Analog-Digital Hybrid Control for High Energy Efficiency in Implantable Biomedical Systems.

PubMed

Park, Sung-Yun; Cho, Jihyun; Lee, Kyuseok; Yoon, Euisik

2015-12-01

We report a pulse width modulation (PWM) buck converter that is able to achieve a power conversion efficiency (PCE) of > 80% in light loads 100 μA) for implantable biomedical systems. In order to achieve a high PCE for the given light loads, the buck converter adaptively reconfigures the size of power PMOS and NMOS transistors and their gate drivers in accordance with load currents, while operating at a fixed frequency of 1 MHz. The buck converter employs the analog-digital hybrid control scheme for coarse/fine adjustment of power transistors. The coarse digital control generates an approximate duty cycle necessary for driving a given load and selects an appropriate width of power transistors to minimize redundant power dissipation. The fine analog control provides the final tuning of the duty cycle to compensate for the error from the coarse digital control. The mode switching between the analog and digital controls is accomplished by a mode arbiter which estimates the average of duty cycles for the given load condition from limit cycle oscillations (LCO) induced by coarse adjustment. The fabricated buck converter achieved a peak efficiency of 86.3% at 1.4 mA and > 80% efficiency for a wide range of load conditions from 45 μA to 4.1 mA, while generating 1 V output from 2.5-3.3 V supply. The converter occupies 0.375 mm(2) in 0.18 μm CMOS processes and requires two external components: 1.2 μF capacitor and 6.8 μH inductor.

A model predictive current control of flux-switching permanent magnet machines for torque ripple minimization

NASA Astrophysics Data System (ADS)

Huang, Wentao; Hua, Wei; Yu, Feng

2017-05-01

Due to high airgap flux density generated by magnets and the special double salient structure, the cogging torque of the flux-switching permanent magnet (FSPM) machine is considerable, which limits the further applications. Based on the model predictive current control (MPCC) and the compensation control theory, a compensating-current MPCC (CC-MPCC) scheme is proposed and implemented to counteract the dominated components in cogging torque of an existing three-phase 12/10 FSPM prototyped machine, and thus to alleviate the influence of the cogging torque and improve the smoothness of electromagnetic torque as well as speed, where a comprehensive cost function is designed to evaluate the switching states. The simulated results indicate that the proposed CC-MPCC scheme can suppress the torque ripple significantly and offer satisfactory dynamic performances by comparisons with the conventional MPCC strategy. Finally, experimental results validate both the theoretical and simulated predictions.

Variable speed wind turbine generator with zero-sequence filter

DOEpatents

Muljadi, Eduard

1998-01-01

A variable speed wind turbine generator system to convert mechanical power into electrical power or energy and to recover the electrical power or energy in the form of three phase alternating current and return the power or energy to a utility or other load with single phase sinusoidal waveform at sixty (60) hertz and unity power factor includes an excitation controller for generating three phase commanded current, a generator, and a zero sequence filter. Each commanded current signal includes two components: a positive sequence variable frequency current signal to provide the balanced three phase excitation currents required in the stator windings of the generator to generate the rotating magnetic field needed to recover an optimum level of real power from the generator; and a zero frequency sixty (60) hertz current signal to allow the real power generated by the generator to be supplied to the utility. The positive sequence current signals are balanced three phase signals and are prevented from entering the utility by the zero sequence filter. The zero sequence current signals have zero phase displacement from each other and are prevented from entering the generator by the star connected stator windings. The zero sequence filter allows the zero sequence current signals to pass through to deliver power to the utility.

Variable Speed Wind Turbine Generator with Zero-sequence Filter

DOEpatents

Muljadi, Eduard

1998-08-25

A variable speed wind turbine generator system to convert mechanical power into electrical power or energy and to recover the electrical power or energy in the form of three phase alternating current and return the power or energy to a utility or other load with single phase sinusoidal waveform at sixty (60) hertz and unity power factor includes an excitation controller for generating three phase commanded current, a generator, and a zero sequence filter. Each commanded current signal includes two components: a positive sequence variable frequency current signal to provide the balanced three phase excitation currents required in the stator windings of the generator to generate the rotating magnetic field needed to recover an optimum level of real power from the generator; and a zero frequency sixty (60) hertz current signal to allow the real power generated by the generator to be supplied to the utility. The positive sequence current signals are balanced three phase signals and are prevented from entering the utility by the zero sequence filter. The zero sequence current signals have zero phase displacement from each other and are prevented from entering the generator by the star connected stator windings. The zero sequence filter allows the zero sequence current signals to pass through to deliver power to the utility.

Variable speed wind turbine generator with zero-sequence filter

DOEpatents

Muljadi, E.

1998-08-25

A variable speed wind turbine generator system to convert mechanical power into electrical power or energy and to recover the electrical power or energy in the form of three phase alternating current and return the power or energy to a utility or other load with single phase sinusoidal waveform at sixty (60) hertz and unity power factor includes an excitation controller for generating three phase commanded current, a generator, and a zero sequence filter. Each commanded current signal includes two components: a positive sequence variable frequency current signal to provide the balanced three phase excitation currents required in the stator windings of the generator to generate the rotating magnetic field needed to recover an optimum level of real power from the generator; and a zero frequency sixty (60) hertz current signal to allow the real power generated by the generator to be supplied to the utility. The positive sequence current signals are balanced three phase signals and are prevented from entering the utility by the zero sequence filter. The zero sequence current signals have zero phase displacement from each other and are prevented from entering the generator by the star connected stator windings. The zero sequence filter allows the zero sequence current signals to pass through to deliver power to the utility. 14 figs.

A study of DC-DC converters with MCT's for arcjet power supplies

NASA Technical Reports Server (NTRS)

Stuart, Thomas A.

1994-01-01

Many arcjet DC power supplies use PWM full bridge converters with large arrays of parallel FET's. This report investigates an alternative supply using a variable frequency series resonant converter with small arrays of parallel MCT's (metal oxide semiconductor controlled thyristors). The reasons for this approach are to: increase reliability by reducing the number of switching devices; and decrease the surface mounting area of the switching arrays. The variable frequency series resonant approach is used because the relatively slow switching speed of the MCT precludes the use of PWM. The 10 kW converter operated satisfactorily with an efficiency of over 91 percent. Test results indicate this efficiency could be increased further by additional optimization of the series resonant inductor.

Q-switched dual-wavelength pumped 3.5-μm erbium-doped mid-Infrared fiber laser

NASA Astrophysics Data System (ADS)

Bawden, Nathaniel; Matsukuma, Hiraku; Henderson-Sapir, Ori; Klantsataya, Elizaveta; Tokita, Shigeki; Ottaway, David J.

2018-02-01

Short pulse operation of fiber lasers operating at wavelengths up 3 micron have been reported in recent years. At longer wavelengths, fiber lasers have only been demonstrated with a continuous operation mode. Short pulse operation in the mid-IR is necessary for utilizing such lasers in laser radars and for medical applications. Our previous numerical work suggested that Q-switching is possible on the 3.5 μm transition in erbium-doped ZBLAN in a similar manner to work demonstrated on the 2.8 μm transition in erbium. In this work we report on initial experimental results of a Q-switched, dualwavelength pumped fiber laser operating on the 3.5 μm transition in erbium-doped ZBLAN glass fibers. Using a hybrid fiber and open resonator configuration utilizing an acousto-optic modulator we demonstrated stable single pulse Q-switching while operating at repetition rates of 20 kHz and up to 120 kHz. The laser achieved a peak power of 8 W with pulse energy of 7 μJ while operating at 25 kHz. Long pulse widths on the order of 1 μs were obtained. The low peak power and long pulses are likely the result of both low gain of the transition and additional losses in the resonator which are currently being investigated. Our latest results will be presented.

Performance of High-Speed PWM Control Chips at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard; Overton, Eric

2001-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many NASA space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. As part of the NASA Glenn Low Temperature Electronics Program, several commercial high-speed Pulse Width Modulation (PWM) chips have been characterized in terms of their performance as a function of temperature in the range of 25 to -196 C (liquid nitrogen). These chips ranged in their electrical characteristics, modes of control, packaging options, and applications. The experimental procedures along with the experimental data obtained on the investigated chips are presented and discussed.

Static and Turn-on Switching Characteristics of 4H-Silicon Carbide SITs to 200 deg C

NASA Technical Reports Server (NTRS)

Niedra, Janis M.; Schwarze, Gene E.

2005-01-01

Test results are presented for normally-off 4H-SiC Static Induction Transistors (SITs) intended for power switching and are among the first normally-off such devices realized in SiC. At zero gate bias, the gate p-n junction depletion layers extend far enough into the conduction channel to cut off the channel. Application of forward gate bias narrows the depletion regions, opening up the channel to conduction by majority carriers. In the present devices, narrow vertical channels get pinched by depletion regions from opposite sides. Since the material is SiC, the devices are usable at temperatures above 150 C. Static curve and pulse mode switching observations were done at selected temperatures up to 200 C on a device with average static characteristics from a batch of similar devices. Gate and drain currents were limited to about 400 mA and 3.5 A, respectively. The drain voltage was limited to roughly 300 V, which is conservative for this 600 V rated device. At 23 C, 1 kW, or even more, could be pulse mode switched in 65 ns (10 to 90 percent) into a 100 load. But at 200 C, the switching capability is greatly reduced in large part by the excessive gate current required. Severe collapse of the saturated drain-to-source current was observed at 200 C. The relation of this property to channel mobility is reviewed.

2. NORTH SIDE. MASTER AERIAL SWITCH ON LOWER RIGHT PORTION ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

2. NORTH SIDE. MASTER AERIAL SWITCH ON LOWER RIGHT PORTION OF WALL. TRIPOD AND TENSION WEIGHTS AT LEFT. - Chollas Heights Naval Radio Transmitting Facility, Helix House, 6410 Zero Road, San Diego, San Diego County, CA

Switching antipsychotic medications.

PubMed

Weiden, P J; Aquila, R; Dalheim, L; Standard, J M

1997-01-01

Compared with conventional antipsychotics, the so-called "atypical" antipsychotics promise improved side effect profiles and better control of the symptoms of schizophrenia. Therefore, most patients currently taking conventional antipsychotics could potentially benefit from a switch to an atypical antipsychotic. Often, the key issue in deciding whether to switch is the presence of countervailing factors that mitigate against the change. This paper discusses the indications and contraindications for switching antipsychotics, plus issues that require consideration before a switch is made. Also, the advantages and disadvantages of various switching techniques are discussed, with a particular focus on the newer antipsychotic olanzapine.

Analysis of the Effect of Zero-Emission Vehicle Policies: State-Level Incentives and the California Zero-Emission Vehicle Regulations

EIA Publications

2017-01-01

The U.S. Energy Information Administration (EIA) contracted with Leidos to analyze the effect of California zero-emission vehicle regulations (ZEVR) and state-level incentives on zero-emission and plug-in hybrid vehicle sales. Leidos worked to review the effect of state-level incentives by: *Conducting a review on the available incentives on zero-emission vehicles and related transitional vehicle types such has plug-in hybrid electric vehicles *Quantifying the effective monetary value of these different incentives *Evaluating the combined values of these incentives in each state on an example sale of a Nissan Leaf and Chevrolet Volt

Towards zero-power ICT.

PubMed

Gammaitoni, Luca; Chiuchiú, D; Madami, M; Carlotti, G

2015-06-05

Is it possible to operate a computing device with zero energy expenditure? This question, once considered just an academic dilemma, has recently become strategic for the future of information and communication technology. In fact, in the last forty years the semiconductor industry has been driven by its ability to scale down the size of the complementary metal-oxide semiconductor-field-effect transistor, the building block of present computing devices, and to increase computing capability density up to a point where the power dissipated in heat during computation has become a serious limitation. To overcome such a limitation, since 2004 the Nanoelectronics Research Initiative has launched a grand challenge to address the fundamental limits of the physics of switches. In Europe, the European Commission has recently funded a set of projects with the aim of minimizing the energy consumption of computing. In this article we briefly review state-of-the-art zero-power computing, with special attention paid to the aspects of energy dissipation at the micro- and nanoscales.

Towards zero-power ICT

NASA Astrophysics Data System (ADS)

Gammaitoni, Luca; Chiuchiú, D.; Madami, M.; Carlotti, G.

2015-06-01

Is it possible to operate a computing device with zero energy expenditure? This question, once considered just an academic dilemma, has recently become strategic for the future of information and communication technology. In fact, in the last forty years the semiconductor industry has been driven by its ability to scale down the size of the complementary metal-oxide semiconductor-field-effect transistor, the building block of present computing devices, and to increase computing capability density up to a point where the power dissipated in heat during computation has become a serious limitation. To overcome such a limitation, since 2004 the Nanoelectronics Research Initiative has launched a grand challenge to address the fundamental limits of the physics of switches. In Europe, the European Commission has recently funded a set of projects with the aim of minimizing the energy consumption of computing. In this article we briefly review state-of-the-art zero-power computing, with special attention paid to the aspects of energy dissipation at the micro- and nanoscales.

The transition probability and the probability for the left-most particle's position of the q-totally asymmetric zero range process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korhonen, Marko; Lee, Eunghyun

2014-01-15

We treat the N-particle zero range process whose jumping rates satisfy a certain condition. This condition is required to use the Bethe ansatz and the resulting model is the q-boson model by Sasamoto and Wadati [“Exact results for one-dimensional totally asymmetric diffusion models,” J. Phys. A 31, 6057–6071 (1998)] or the q-totally asymmetric zero range process (TAZRP) by Borodin and Corwin [“Macdonald processes,” Probab. Theory Relat. Fields (to be published)]. We find the explicit formula of the transition probability of the q-TAZRP via the Bethe ansatz. By using the transition probability we find the probability distribution of the left-most particle'smore » position at time t. To find the probability for the left-most particle's position we find a new identity corresponding to identity for the asymmetric simple exclusion process by Tracy and Widom [“Integral formulas for the asymmetric simple exclusion process,” Commun. Math. Phys. 279, 815–844 (2008)]. For the initial state that all particles occupy a single site, the probability distribution of the left-most particle's position at time t is represented by the contour integral of a determinant.« less

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

PubMed

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

NASA Astrophysics Data System (ADS)

Tian, Liqiang; Shi, Wei; Feng, Qingqing

2011-11-01

A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

Heating the sun's lower transition region with fine-scale electric currents

NASA Technical Reports Server (NTRS)

Rabin, D.; Moore, R.

1984-01-01

Analytical and observational data are presented to show that the lower transition zone, a 100 km thick region at 10,000-200,000 K between the solar chromosphere and corona, is heated by local electric currents. The study was spurred by correlations between the enhanced atmospheric heating and magnetospheric flux in the chromospheric network and active regions. Field aligned current heated flux loops are asserted to mainly reside in and make up most of the transition region. It is shown that thermal conduction from the sides of hot gas columns generated by the current dissipation is the source of the observed temperature distribution in the transition regions.

Arc-Free High-Power dc Switch

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1982-01-01

Hybrid switch allows high-power direct current to be turned on and off without arcing or erosion. Switch consists of bank of transistors in parallel with mechanical contacts. Transistor bank makes and breaks switched circuit; contacts carry current only during steady-state "on" condition. Designed for Space Shuttle orbiter, hybrid switch can be used also in high-power control circuits in aircraft, electric autos, industrial furnaces, and solar-cell arrays.

Fisher zeros and conformality in lattice models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meurice, Yannick; Bazavov, Alexei; Berg, Bernd A.

2012-10-01

Fisher zeros are the zeros of the partition function in the complex beta=2N_c/g^2 plane. When they pinch the real axis, finite size scaling allows one to distinguish between first and second order transition and to estimate exponents. On the other hand, a gap signals confinement and the method can be used to explore the boundary of the conformal window. We present recent numerical results for 2D O(N) sigma models, 4D U(1) and SU(2) pure gauge and SU(3) gauge theory with N_f=4 and 12 flavors. We discuss attempts to understand some of these results using analytical methods. We discuss the 2-latticemore » matching and qualitative aspects of the renormalization group (RG) flows in the Migdal-Kadanoff approximation, in particular how RG flows starting at large beta seem to move around regions where bulk transitions occur. We consider the effects of the boundary conditions on the nonperturbative part of the average energy and on the Fisher zeros for the 1D O(2) model.« less

Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

NASA Astrophysics Data System (ADS)

Singh, Subhash; Mohapatra, Y. N.

2017-06-01

We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

Design and Implementation of 13 Levels Multilevel Inverter for Photovoltaic System

NASA Astrophysics Data System (ADS)

Subramani, C.; Dhineshkumar, K.; Palanivel, P.

2018-04-01

This paper approaches the appearing and modernization of S-Type PV based 13- level multilevel inverter with less quantity of switch. The current S-Type Multi level inverter contains more number of switches and voltage sources. Multilevel level inverter is a be understandable among the most gainful power converters for high power application and present day applications with reduced switches. The fundamental good arrangement of the 13-level multilevel inverter is to get ventured voltage from a couple of levels of DC voltages.. The controller gives actual way day and age to switches through driver circuit using PWM methodology. The execution assessment of proposed multilevel inverter is checked using MATLAB/Simulink. This is the outstanding among other techniquem appeared differently in relation to all other existing system

Short-range transit planning : current practice and a proposed framework

DOT National Transportation Integrated Search

1984-06-01

The research described in this report explored the service and operations : planning process in the transit industry in a two-phase approach. In the first : phase a detailed assessment of current short range transit planning practice was : undertaken...

Transitional care for rheumatic conditions in Europe: current clinical practice and available resources.

PubMed

Clemente, Daniel; Leon, Leticia; Foster, Helen; Carmona, Loreto; Minden, Kirsten

2017-06-09

To assess European pediatric rheumatology providers' current clinical practices and resources used in the transition from child-centered to adult-oriented care. European pediatric rheumatologists were invited to complete a 17-item anonymized e-survey assessing current transition practices, transition policy awareness, and needs in advance of the publication of EULAR/PReS recommendations on transition. The response rate was 121/276 (44%), including responses from 115 centers in 22 European Union countries. Although 32/121 (26%) responded that their centers did not offer transition services, the majority (99%) agreed that a formalized process in transitioning patients to adult care is necessary. A minority (<30%) of respondents stated that they have a written transition policy although 46% have an informal transition process. Designated staff to support transitional care were available in a minority of centers: nurse (35%), physiotherapist (15%), psychologist (15%), social worker (8%), and occupational therapist (2%). The existence of a designated team member to coordinate transition was acknowledged in many centers (64% of respondents) although just 36% use a checklist for young people as part of individualized transitional care. This survey of European pediatric rheumatology providers regarding transitional care practices demonstrates agreement that transitional care is important, and wide variation in current provision of transition services exists.

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

PubMed Central

Klemm, Matthias; Horn, Siegfried; Woydt, Mathias

2011-01-01

Summary Magnéli-type vanadium oxides form the homologous series VnO2 n -1 and exhibit a temperature-induced, reversible metal–insulator first order phase transition (MIT). We studied the change of the adhesion force across the transition temperature between the cleavage planes of various vanadium oxide Magnéli phases (n = 3 … 7) and spherical titanium atomic force microscope (AFM) tips by systematic force–distance measurements with a variable-temperature AFM under ultrahigh vacuum conditions (UHV). The results show, for all investigated samples, that crossing the transition temperatures leads to a distinct change of the adhesion force. Low adhesion corresponds consistently to the metallic state. Accordingly, the ability to modify the electronic structure of the vanadium Magnéli phases while maintaining composition, stoichiometry and crystallographic integrity, allows for relating frictional and electronic material properties at the nano scale. This behavior makes the vanadium Magnéli phases interesting candidates for technology, e.g., as intelligent devices or coatings where switching of adhesion or friction is desired. PMID:21977416

Micro-Ball-Lens Optical Switch Driven by SMA Actuator

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok

2003-01-01

its transition temperature, thereby causing it to deform to a different "remembered" shape. The two SMA actuators would be stiff enough that once switching had taken place and the electrical current was turned off, the lens would remain latched in the most recently selected position. In a test, the partially developed switch exhibited an insertion loss of only -1.9 dB and a switching contrast of 70 dB. One the basis of prior research on SMA actuators and assuming a lens displacement of 125 m between extreme positions, it has been estimated that the fully developed switch would be capable of operating at a frequency as high as 10 Hz.

AEA Cell-Bypass-Switch Activation: An Update

NASA Technical Reports Server (NTRS)

Keys, Denney; Rao, Gopalakrishna M.; Wannemacher, Harry

2002-01-01

The objectives of this project included the following: (1) verify the performance of AEA cell bypass protection device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) assess the safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD; and (3) confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path (a homogeneous low melting point alloy). The nominal performance of AEA CBPD under flight operating conditions (vacuum except zero-G, and high impedance cell) has been demonstrated. There is no evidence of cell rupture or excessive heat production during or after CBPD switch activation under simulated high cell impedance (open-circuit cell failure mode). The formation of a continuous low impedance path (a homogeneous low melting point alloy) has been confirmed.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

A Regulatory Switch Alters Chromosome Motions at the Metaphase to Anaphase Transition

PubMed Central

Su, Kuan-Chung; Barry, Zachary; Schweizer, Nina; Maiato, Helder; Bathe, Mark; Cheeseman, Iain McPherson

2016-01-01

Summary To achieve chromosome segregation during mitosis, sister chromatids must undergo a dramatic change in their behavior to switch from balanced oscillations at the metaphase plate to directed poleward motion during anaphase. However, the factors that alter chromosome behavior at the metaphase-to-anaphase transition remain incompletely understood. Here, we perform time-lapse imaging to analyze anaphase chromosome dynamics in human cells. Using multiple directed biochemical, genetic, and physical perturbations, our results demonstrate that differences in the global phosphorylation states between metaphase and anaphase are the major determinant of chromosome motion dynamics. Indeed, causing a mitotic phosphorylation state to persist into anaphase produces dramatic metaphase-like oscillations. These induced oscillations depend on both kinetochore-derived and polar ejection forces that oppose poleward motion. Thus, our analysis of anaphase chromosome motion reveals that dephosphorylation of multiple mitotic substrates is required to suppress metaphase chromosome oscillatory motions and achieve directed poleward motion for successful chromosome segregation. PMID:27829144

Biomolecule nanoparticle-induced nanocomposites with resistive switching nonvolatile memory properties

NASA Astrophysics Data System (ADS)

Ko, Yongmin; Ryu, Sook Won; Cho, Jinhan

2016-04-01

Resistive switching behavior-based memory devices are considered promising candidates for next-generation data storage because of their simple structure configuration, low power consumption, and rapid operating speed. Here, the resistive switching nonvolatile memory properties of Fe2O3 nanocomposite (NC) films prepared from the thermal calcination of layer-by-layer (LbL) assembled ferritin multilayers were successfully investigated. For this study, negatively charged ferritin nanoparticles were alternately deposited onto the Pt-coated Si substrate with positively charged poly(allylamine hydrochloride) (PAH) by solution-based electrostatic LbL assembly, and the formed multilayers were thermally calcinated to obtain a homogeneous transition metal oxide NC film through the elimination of organic components, including the protein shell of ferritin. The formed memory device exhibits a stable ON/OFF current ratio of approximately 103, with nanosecond switching times under an applied external bias. In addition, these reversible switching properties were kept stable during the repeated cycling tests of above 200 cycles and a test period of approximately 105 s under atmosphere. These solution-based approaches can provide a basis for large-area inorganic nanoparticle-based electric devices through the design of bio-nanomaterials at the molecular level.

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

NASA Astrophysics Data System (ADS)

Fleck, Karsten; La Torre, Camilla; Aslam, Nabeel; Hoffmann-Eifert, Susanne; Böttger, Ulrich; Menzel, Stephan

2016-12-01

Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long-term stable redox-based resistive random-access memory devices. Therefore, this work presents a detailed study of the set kinetics of valence change resistive switches on a time scale from 10 ns to 104 s , taking Pt /SrTiO3/TiN nanocrossbars as a model material. The analysis of the transient currents reveals that the switching process can be subdivided into a linear-degradation process that is followed by a thermal runaway. The comparison with a dynamical electrothermal model of the memory cell allows the deduction of the physical origin of the degradation. The origin is an electric-field-induced increase of the oxygen-vacancy concentration near the Schottky barrier of the Pt /SrTiO3 interface that is accompanied by a steadily rising local temperature due to Joule heating. The positive feedback of the temperature increase on the oxygen-vacancy mobility, and thereby on the conductivity of the filament, leads to a self-acceleration of the set process.

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowinska, Malgorzata, E-mail: sowinska@ihp-microelectronics.com; Bertaud, Thomas; Walczyk, Damian

2014-05-28

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in themore » conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.« less

Mode selecting switch using multimode interference for on-chip optical interconnects.

PubMed

Priti, Rubana B; Pishvai Bazargani, Hamed; Xiong, Yule; Liboiron-Ladouceur, Odile

2017-10-15

A novel mode selecting switch (MSS) is experimentally demonstrated for on-chip mode-division multiplexing (MDM) optical interconnects. The MSS consists of a Mach-Zehnder interferometer with tapered multi-mode interference couplers and TiN thermo-optic phase shifters for conversion and switching between the optical data encoded on the fundamental and first-order quasi-transverse electric (TE) modes. The C-band MSS exhibits a >25  dB switching extinction ratio and < -12 dB crosstalk. We validate the dynamic switching with a 25.8 kHz gating signal measuring switching times for both TE0 and TE1 modes of <10.9  μs. All channels exhibit less than 1.7 dB power penalty at a 10 -12 bit error rate, while switching the non-return-to-zero PRBS-31 data signals at 10  Gb/s.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching.

PubMed

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-08

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (10 5 ) with better endurance (∼2000 cycles) and longer data retention (10 4 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Method and apparatus for controlling current in inductive loads such as large diameter coils

DOEpatents

Riveros, Carlos A.

1981-01-01

A method and apparatus for controlling electric current in loads that are essentially inductive, such that sparking and "ringing" current problems are reduced or eliminated. The circuit apparatus employs a pair of solid state switches (each of which switch may be an array of connected or parallel solid state switching devices such as transistors) and means for controlling those switches such that a power supply supplying two d.c. voltages (e.g. positive 150 volts d.c. and negative 150 volts d.c.) at low resistance may be connected across an essentially inductive load (e.g. a 6 gauge wire loop one hundred meters in diameter) alternatively and such that the first solid state switch is turned off and the second is turned on such that both are not on at the same time but the first turned on and the other on in less time than the inductive time constant (L/R) so that the load is essentially always presented with a low resistance path across its input. In this manner a steady AC current may be delivered to the load at a frequency desired. Shut-off problems are avoided by gradually shortening the period of switching to less than the time constant so that the maximum energy contained in the inductive load is reduced to approximately zero and dissipated in the inherent resistance. The invention circuit may be employed by adjusting the timing of switching to deliver a desired waveform (such as sinusoidal) to the load.

Large Transient Optical Modulation of Epsilon-Near-Zero Colloidal Nanocrystals

DOE PAGES

Diroll, Benjamin T.; Guo, Peijun; Chang, Robert P. H.; ...

2016-10-18

Here, epsilon-near-zero materials may be synthesized as colloidal nanocrystals which display large magnitude subpicosecond switching of infrared localized surface plasmon resonances. Such nanocrystals offer a solution-processable, scalable source of tunable metamaterials compatible with arbitrary substrates. Under intraband excitation, these nanocrystals display a red-shift of the plasmon feature arising from the low electron heat capacities and conduction band nonparabolicity of the oxide. Under interband pumping, they show in an ultrafast blueshift of the plasmon resonance due to transient increases in the carrier density. Combined with their high-quality factor, large changes in relative transmittance (+86%) and index of refraction (+85%) at modestmore » control fluences (<5 mJ/cm 2) suggest that these materials offer great promise for all-optical switching, wavefront engineering, and beam steering operating at terahertz switching frequencies.« less

Dynamo transition in low-dimensional models.

PubMed

Verma, Mahendra K; Lessinnes, Thomas; Carati, Daniele; Sarris, Ioannis; Kumar, Krishna; Singh, Meenakshi

2008-09-01

Two low-dimensional magnetohydrodynamic models containing three velocity and three magnetic modes are described. One of them (nonhelical model) has zero kinetic and current helicity, while the other model (helical) has nonzero kinetic and current helicity. The velocity modes are forced in both these models. These low-dimensional models exhibit a dynamo transition at a critical forcing amplitude that depends on the Prandtl number. In the nonhelical model, dynamo exists only for magnetic Prandtl number beyond 1, while the helical model exhibits dynamo for all magnetic Prandtl number. Although the model is far from reproducing all the possible features of dynamo mechanisms, its simplicity allows a very detailed study and the observed dynamo transition is shown to bear similarities with recent numerical and experimental results.

Simulation model for a seven-phase BLDCM drive system

NASA Astrophysics Data System (ADS)

Park, Sang-Hoon; Lee, Won-Cheol; Lee, Jung-Hyo; Yu, Jae-Sung; Kim, Gyu-Sik; Won, Chung-Yuen

2007-12-01

BLDC motors have many advantages over brushed DC motors and induction motors. So, BLDC motors extend their application to many industrial fields. In this paper, the digital simulation and modeling of a 7-phase brushless DC motor have been presented. The 14-switch inverter and a 7-phase brushless DC motor drive system are simulated using hysteresis current controller and logic of switching pattern with the Boolean¡s function. Through some simulations, we found that our modeling and analysis of a 7-phase BLDCM with PWM inverter would be helpful for the further studies of the multi-phase BLDCM drive systems.

Solid core dipoles and switching power supplies: Lower cost light sources?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benesch, Jay; Philip, Sarin

As a result of improvements in power semiconductors, moderate frequency switching supplies can now provide the hundreds of amps typically required by accelerators with zero-to-peak noise in the kHz region ~ 0.06% in current or voltage mode. Modeling was undertaken using a finite electromagnetic program to determine if eddy currents induced in the solid steel of CEBAF magnets and small supplemental additions would bring the error fields down to the 5ppm level needed for beam quality. The expected maximum field of the magnet under consideration is 0.85 T and the DC current required to produce that field is used inmore » the calculations. An additional 0.1% current ripple is added to the DC current at discrete frequencies 360 Hz, 720 Hz or 7200 Hz. Over the region of the pole within 0.5% of the central integrated BdL the resulting AC field changes can be reduced to less than 1% of the 0.1% input ripple for all frequencies, and a sixth of that at 7200 Hz. Doubling the current, providing 1.5 T central field, yielded the same fractional reduction in ripple at the beam for the cases checked. A small dipole was measured at 60, 120, 360 and 720 Hz in two conditions and the results compared to the larger model for the latter two frequencies with surprisingly good agreement. Thus, for light sources with aluminum vacuum vessels and full energy linac injection, the combination of solid core dipoles and switching power supplies may result in significant cost savings.« less

Direct current hybrid breakers: A design and its realization

NASA Astrophysics Data System (ADS)

Atmadji, Ali Mahfudz Surya

2000-12-01

The use of semiconductors for electric power circuit breakers instead of conventional breakers remains a utopia when designing fault current interrupters for high power networks. The major problems concerning power semiconductor circuit breakers are the excessive heat losses and their sensitivity to transients. However, conventional breakers are capable of dealing with such matters. A combination of the two methods, or so-called `hybrid breakers', would appear to be a solution; however, hybrid breakers use separate parallel branches for conducting the main current and interrupting the short-circuit current. Such breakers are intended for protecting direct current (DC) traction systems. In this thesis hybrid switching techniques for current limitation and purely solidstate current interruption are investigated for DC breakers. This work analyzes the transient behavior of hybrid breakers and compares their operations with conventional breakers and similar solid-state devices in DC systems. Therefore a hybrid breaker was constructed and tested in a specially designed high power test circuit. A vacuum breaker was chosen as the main breaker in the main conducting path; then a commutation path was connected across the vacuum breaker where it provided current limitation and interruption. The commutation path operated only during any current interruption and the process required additional circuits. These included a certain energy storage, overvoltage suppressor and commutation switch. So that when discharging this energy, a controlled counter-current injection could be produced. That counter-current opposed the main current in the breaker by superposition in order to create a forced current-zero. One-stage and two-stage commutation circuits have been treated extensively. This study project contains both theoretical and experimental investigations. A direct current shortcircuit source was constructed capable of delivering power equivalent to a fault. It supplied a direct

Rational Design and Tuning of Functional RNA Switch to Control an Allosteric Intermolecular Interaction.

PubMed

Endoh, Tamaki; Sugimoto, Naoki

2015-08-04

Conformational transitions of biomolecules in response to specific stimuli control many biological processes. In natural functional RNA switches, often called riboswitches, a particular RNA structure that has a suppressive or facilitative effect on gene expression transitions to an alternative structure with the opposite effect upon binding of a specific metabolite to the aptamer region. Stability of RNA secondary structure (-ΔG°) can be predicted based on thermodynamic parameters and is easily tuned by changes in nucleobases. We envisioned that tuning of a functional RNA switch that causes an allosteric interaction between an RNA and a peptide would be possible based on a predicted switching energy (ΔΔG°) that corresponds to the energy difference between the RNA secondary structure before (-ΔG°before) and after (-ΔG°after) the RNA conformational transition. We first selected functional RNA switches responsive to neomycin with predicted ΔΔG° values ranging from 5.6 to 12.2 kcal mol(-1). We then demonstrated a simple strategy to rationally convert the functional RNA switch to switches responsive to natural metabolites thiamine pyrophosphate, S-adenosyl methionine, and adenine based on the predicted ΔΔG° values. The ΔΔG° values of the designed RNA switches proportionally correlated with interaction energy (ΔG°interaction) between the RNA and peptide, and we were able to tune the sensitivity of the RNA switches for the trigger molecule. The strategy demonstrated here will be generally applicable for construction of functional RNA switches and biosensors in which mechanisms are based on conformational transition of nucleic acids.

Auxiliary quasi-resonant dc tank electrical power converter

DOEpatents

Peng, Fang Z.

2006-10-24

An auxiliary quasi-resonant dc tank (AQRDCT) power converter with fast current charging, voltage balancing (or charging), and voltage clamping circuits is provided for achieving soft-switched power conversion. The present invention is an improvement of the invention taught in U.S. Pat. No. 6,111,770, herein incorporated by reference. The present invention provides faster current charging to the resonant inductor, thus minimizing delay time of the pulse width modulation (PWM) due to the soft-switching process. The new AQRDCT converter includes three tank capacitors or power supplies to achieve the faster current charging and minimize the soft-switching time delay. The new AQRDCT converter further includes a voltage balancing circuit to charge and discharge the three tank capacitors so that additional isolated power supplies from the utility line are not needed. A voltage clamping circuit is also included for clamping voltage surge due to the reverse recovery of diodes.

Effects of confinement and electron transport on magnetic switching in single Co nanoparticles

PubMed Central

Jiang, W.; Birk, F. T.; Davidović, D.

2013-01-01

This work reports the first study of current-driven magnetization noise in a single, nanometerscale, ferromagnetic (Co) particle, attached to normal metal leads by high-resistance tunneling junctions. As the tunnel current increases at low temperature, the magnetic switching field decreases, its probability distribution widens, while the temperature of the environment remains nearly constant. These observations demonstrate nonequilibrium magnetization noise. A classical model of the noise is provided, where the spin-orbit interaction plays a central role in driving magnetic tunneling transitions. PMID:23383370

Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells.

PubMed

Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Ishikawa, Hiroshi

2011-07-04

We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

Artificial Neural Identification and LMI Transformation for Model Reduction-Based Control of the Buck Switch-Mode Regulator

NASA Astrophysics Data System (ADS)

Al-Rabadi, Anas N.

2009-10-01

This research introduces a new method of intelligent control for the control of the Buck converter using newly developed small signal model of the pulse width modulation (PWM) switch. The new method uses supervised neural network to estimate certain parameters of the transformed system matrix [Ã]. Then, a numerical algorithm used in robust control called linear matrix inequality (LMI) optimization technique is used to determine the permutation matrix [P] so that a complete system transformation {[B˜], [C˜], [Ẽ]} is possible. The transformed model is then reduced using the method of singular perturbation, and state feedback control is applied to enhance system performance. The experimental results show that the new control methodology simplifies the model in the Buck converter and thus uses a simpler controller that produces the desired system response for performance enhancement.

Mixed Monolayers of Spiropyrans Maximize Tunneling Conductance Switching by Photoisomerization at the Molecule–Electrode Interface in EGaIn Junctions

PubMed Central

2016-01-01

This paper describes the photoinduced switching of conductance in tunneling junctions comprising self-assembled monolayers of a spiropyran moiety using eutectic Ga–In top contacts. Despite separation of the spiropyran unit from the electrode by a long alkyl ester chain, we observe an increase in the current density J of a factor of 35 at 1 V when the closed form is irradiated with UV light to induce the ring-opening reaction, one of the highest switching ratios reported for junctions incorporating self-assembled monolayers. The magnitude of switching of hexanethiol mixed monolayers was higher than that of pure spiropyran monolayers. The first switching event recovers 100% of the initial value of J and in the mixed-monolayers subsequent dampening is not the result of degradation of the monolayer. The observation of increased conductivity is supported by zero-bias DFT calculations showing a change in the localization of the density of states near the Fermi level as well as by simulated transmission spectra revealing positive resonances that broaden and shift toward the Fermi level in the open form. PMID:27602432

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di; Department of Optical Science and Engineering, Key Laboratory of Micro and Nano Photonic Structures; Yu, Guoqiang, E-mail: guoqiangyu@ucla.edu

2016-05-23

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer,more » i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.« less

Triggered plasma opening switch

DOEpatents

Mendel, Clifford W.

1988-01-01

A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

Conducting-insulating transition in adiabatic memristive networks

NASA Astrophysics Data System (ADS)

Sheldon, Forrest C.; Di Ventra, Massimiliano

2017-01-01

The development of neuromorphic systems based on memristive elements—resistors with memory—requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a discontinuous transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON-OFF ratio. We investigate the consequences of this transition for the memristive current-voltage characteristics both through simulation and theory, and demonstrate the role of current-voltage duality in relating forward and reverse switching processes. Our work sheds considerable light on the statistical properties of memristive networks that are presently studied both for unconventional computing and as models of neural networks.

Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

PubMed

Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

2013-02-11

We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

EMQIT: a machine learning approach for energy based PWM matrix quality improvement.

PubMed

Smolinska, Karolina; Pacholczyk, Marcin

2017-08-01

Transcription factor binding affinities to DNA play a key role for the gene regulation. Learning the specificity of the mechanisms of binding TFs to DNA is important both to experimentalists and theoreticians. With the development of high-throughput methods such as, e.g., ChiP-seq the need to provide unbiased models of binding events has been made apparent. We present EMQIT a modification to the approach introduced by Alamanova et al. and later implemented as 3DTF server. We observed that tuning of Boltzmann factor weights, used for conversion of calculated energies to nucleotide probabilities, has a significant impact on the quality of the associated PWM matrix. Consequently, we proposed to use receiver operator characteristics curves and the 10-fold cross-validation to learn best weights using experimentally verified data from TRANSFAC database. We applied our method to data available for various TFs. We verified the efficiency of detecting TF binding sites by the 3DTF matrices improved with our technique using experimental data from the TRANSFAC database. The comparison showed a significant similarity and comparable performance between the improved and the experimental matrices (TRANSFAC). Improved 3DTF matrices achieved significantly higher AUC values than the original 3DTF matrices (at least by 0.1) and, at the same time, detected notably more experimentally verified TFBSs. The resulting new improved PWM matrices for analyzed factors show similarity to TRANSFAC matrices. Matrices had comparable predictive capabilities. Moreover, improved PWMs achieve better results than matrices downloaded from 3DTF server. Presented approach is general and applicable to any energy-based matrices. EMQIT is available online at http://biosolvers.polsl.pl:3838/emqit . This article was reviewed by Oliviero Carugo, Marek Kimmel and István Simon.

Optically Driven Q-Switches For Lasers

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1994-01-01

Optically driven Q-switches for pulsed lasers proposed, taking place of acousto-optical, magneto-optical, and electro-optical switches. Optical switching beams of proposed Q-switching most likely generated in pulsed diode lasers or light-emitting diodes, outputs of which are amplitude-modulated easily by direct modulation of relatively small input currents. Energy efficiencies exceed those of electrically driven Q-switches.

Megavolt, Multigigawatt Pulsed Plasma Switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Song, Kyo D.

1996-01-01

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

DOEpatents

Mar, Alan [Albuquerque, NM; Zutavern, Fred J [Albuquerque, NM; Loubriel, Guillermo [Albuquerque, NM

2007-02-06

An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

Closed-loop torque feedback for a universal field-oriented controller

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Doncker, Rik W. A. A.; King, Robert D.; Sanza, Peter C.

A torque feedback system is employed in a universal field-oriented (UFO) controller to tune a torque-producing current command and a slip frequency command in order to achieve robust torque control of an induction machine even in the event of current regulator errors and during transitions between pulse width modulated (PWM) and square wave modes of operation.

Switchable and non-switchable zero backscattering of dielectric nano-resonators

DOE PAGES

Wang, Feng; Wei, Qi -Huo; Htoon, Han

2015-02-27

Previous studies have shown that two-dimensional (2D) arrays of high-permittivity dielectric nanoparticles are capable of fully suppressing backward light scattering when the resonant frequencies of electrical and magnetic dipolar modes are coincident. In this paper, we numerically demonstrate that the zero-backscattering of 2D Si nanocuboid arrays can be engineered to be switchable or non-switchable in response to a variation in the environmental refractive index. For each cuboid width/length, there exist certain cuboid heights and orthogonal periodicity ratio for which the electrical and magnetic resonances exhibit similar spectra widths and equivalent sensitivities to the environmental index changes, so that the zero-backscatteringmore » is non-switchable upon environmental change. For some other cuboid heights and certain anisotropic periodicity ratios, the electric and magnetic modes exhibit different sensitivities to environmental index changes, making the zero-backscattering sensitive to environmental changes. We also show that by using two different types of nano-resonators in the unit cell, Fano resonances can be introduced to greatly enhance the switching sensitivity of zero-backscattering.« less

Improved understanding of the hot cathode current modes and mode transitions [Mechanism of the hot cathode current mode transitions

DOE PAGES

Campanell, Michael D.; Umansky, M. V.

2017-11-22

Hot cathodes are crucial components in a variety of plasma sources and applications, but they induce mode transitions and oscillations that are not fully understood. It is often assumed that negatively biased hot cathodes have a space-charge limited (SCL) sheath whenever the current is limited. Here, we show on theoretical grounds that a SCL sheath cannot persist. First, charge-exchange ions born within the virtual cathode (VC) region get trapped and build up. After the ion density reaches the electron density at a point in the VC, a new neutral region is formed and begins growing in space. In planar geometry,more » this 'new plasma' containing cold trapped ions and cold thermoelectrons grows towards the anode and fills the gap, leaving behind an inverse cathode sheath. This explains how transitions from temperature-limited mode to anode glow mode occur in thermionic discharge experiments with magnetic fields. If the hot cathode is a small filament in an unmagnetized plasma, the trapped ion region is predicted to grow radially in both directions, get expelled if it reaches the cathode, and reform periodically. Filament-induced current oscillations consistent with this prediction have been reported in experiments. Here, we set up planar geometry simulations of thermionic discharges and demonstrate several mode transition phenomena for the first time. Lastly, our continuum kinetic code lacks the noise of particle simulations, enabling a closer study of the temporal dynamics.« less

Improved understanding of the hot cathode current modes and mode transitions [Mechanism of the hot cathode current mode transitions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campanell, Michael D.; Umansky, M. V.

Hot cathodes are crucial components in a variety of plasma sources and applications, but they induce mode transitions and oscillations that are not fully understood. It is often assumed that negatively biased hot cathodes have a space-charge limited (SCL) sheath whenever the current is limited. Here, we show on theoretical grounds that a SCL sheath cannot persist. First, charge-exchange ions born within the virtual cathode (VC) region get trapped and build up. After the ion density reaches the electron density at a point in the VC, a new neutral region is formed and begins growing in space. In planar geometry,more » this 'new plasma' containing cold trapped ions and cold thermoelectrons grows towards the anode and fills the gap, leaving behind an inverse cathode sheath. This explains how transitions from temperature-limited mode to anode glow mode occur in thermionic discharge experiments with magnetic fields. If the hot cathode is a small filament in an unmagnetized plasma, the trapped ion region is predicted to grow radially in both directions, get expelled if it reaches the cathode, and reform periodically. Filament-induced current oscillations consistent with this prediction have been reported in experiments. Here, we set up planar geometry simulations of thermionic discharges and demonstrate several mode transition phenomena for the first time. Lastly, our continuum kinetic code lacks the noise of particle simulations, enabling a closer study of the temporal dynamics.« less

76 FR 71934 - Tobacco Transition Payment Program; Availability of Current Assessment Methods Determination...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-21

... DEPARTMENT OF AGRICULTURE Farm Service Agency Tobacco Transition Payment Program; Availability of Current Assessment Methods Determination Document AGENCY: Commodity Credit Corporation and Farm Service... current methods used to calculate manufacturer and importer assessments that fund the Tobacco Transition...

Persistent current and zero-energy Majorana modes in a p -wave disordered superconducting ring

NASA Astrophysics Data System (ADS)

Nava, Andrea; Giuliano, Rosa; Campagnano, Gabriele; Giuliano, Domenico

2017-04-01

We discuss the emergence of zero-energy Majorana modes in a disordered finite-length p -wave one-dimensional superconducting ring, pierced by a magnetic flux Φ tuned at an appropriate value Φ =Φ* . In the absence of fermion parity conservation, we evidence the emergence of the Majorana modes by looking at the discontinuities in the persistent current I [Φ ] at Φ =Φ* . By monitoring the discontinuities in I [Φ ] , we map out the region in parameter space characterized by the emergence of Majorana modes in the disordered ring.

Switching power supply

DOEpatents

Mihalka, A.M.

1984-06-05

The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

Modeling of CMOS compatible ring resonator switch with intermediate vanadium oxide as the switching element

NASA Astrophysics Data System (ADS)

Singh, Mandeep; Datta, Arnab

2018-05-01

In this paper, silicon based dual ring resonator with hybrid plasmonic bus waveguides (Cu-SiO2-Si-SiO2-Cu) is investigated for achieving switching in the telecommunication C-band (λ = 1.54-1.553µm). The switch element uses vanadium oxide (VO2) as the switching medium when inserted between the rings in order to tailor transmission from one ring to the other through heating induced phase transition. In this manner, the proposed switch element uses one vanadium oxide medium instead of refractive index tailoring of the whole ring as in the prior reported works and achieves switching response. From two-dimensional finite element analysis we have found that, the proposed switch can achieve maximum extinction ratio of 2.72 dB at λ = 1.5434µm, exclusively by tailoring VO2 phase. Furthermore, impact of aperture width, and gap (separation between the bus waveguide and rings) are investigated to gain insight on the improvement of extinction ratio. From our numerical simulations, we find that free spectral range (FSR) and figure of merit (Q) for OFF and ON states are (173.36 nm, 92.63), and (173.58 nm, 65.39), respectively.

A Neural Mechanism of Preference Shifting Under Zero Price Condition

PubMed Central

Votinov, Mikhail; Aso, Toshihiko; Fukuyama, Hidenao; Mima, Tatsuya

2016-01-01

In everyday life, free products have a strong appeal to us, even if we do not need them. Behavioral studies demonstrated that people have a tendency to switch their preference from preferred more expensive products to less preferable, cheaper alternatives, when the cheaper option becomes free. However, the neural representation of this behavioral anomaly called “Zero price” is still unclear. Using fMRI, we studied subjects while they performed binary preference choice task for items with different prices. We found that zero-related change of preference was associated with activation of the choice network, which includes inferior parietal lobule (IPL), posterior cingulate cortex and medial prefrontal cortex. Moreover, the amount of activation in medial prefrontal cortex was positively correlated with the subjective happiness score of getting free products. Our findings suggest that the Zero-price effect is driven by affective evaluations during decision-making. PMID:27148024

Lee-Yang zero analysis for the study of QCD phase structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ejiri, Shinji

2006-03-01

We comment on the Lee-Yang zero analysis for the study of the phase structure of QCD at high temperature and baryon number density by Monte-Carlo simulations. We find that the sign problem for nonzero density QCD induces a serious problem in the finite volume scaling analysis of the Lee-Yang zeros for the investigation of the order of the phase transition. If the sign problem occurs at large volume, the Lee-Yang zeros will always approach the real axis of the complex parameter plane in the thermodynamic limit. This implies that a scaling behavior which would suggest a crossover transition will notmore » be obtained. To clarify this problem, we discuss the Lee-Yang zero analysis for SU(3) pure gauge theory as a simple example without the sign problem, and then consider the case of nonzero density QCD. It is suggested that the distribution of the Lee-Yang zeros in the complex parameter space obtained by each simulation could be more important information for the investigation of the critical endpoint in the (T,{mu}{sub q}) plane than the finite volume scaling behavior.« less

The Transition to High School: Current Knowledge, Future Directions

PubMed Central

2011-01-01

In the American educational system, school transitions are frequent and predictable, but they can disrupt student functioning across developmental domains. How students experience school transitions has been a focus of research for some time, but the high school transition has received less attention, and the limited research often focuses on a particular developmental domain (e.g., academics and socioemotional well-being) to the exclusion of a more integrated model. This review relies on life course theory to establish an organizational framework for interpreting and connecting the diffuse and sometimes disparate findings on the high school transition, including adolescent developmental trajectories and the influence of social ties, changing sociocultural contexts, and stratification systems. Conclusions identify aspects for future inquiry suggested by current knowledge and the tenets of the life course perspective. PMID:21966178

Metal-to-insulator switching in quantum anomalous Hall states

DOE PAGES

Kou, Xufeng; Pan, Lei; Wang, Jing; ...

2015-10-07

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr 0.12Bi 0.26Sb 0.62) 2Te 3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phasemore » diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

Get Current: Switch on Clean Energy Activity Book

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2014-06-01

Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme.

Development and optimization of a matrix converter supplying an electronic ballast - UV lamp system for water sterilization

NASA Astrophysics Data System (ADS)

Bokhtache, Aicha Aissa; Zegaoui, Abdallah; Aillerie, Michel; Djahbar, Abdelkader; Hemici, Kheira

2018-05-01

Electronic ballasts dedicated to discharge lamps allow improving the quality of radiation by operating at high frequency. In the present work, the use of a single-phase direct converter with a matrix structure for supplying a low-pressure mercury-argon UVC lamp for water sterilization is proposed. The structure of the converter is based on two switching cells allowing the realization of a fully controllable bidirectional switches. The advantages of such a matrix topology include the delivered of a sinusoidal waveform current with a controllable power factor close to unity, variable in amplitude and frequency. In order to obtain the desired amplitude and frequency, a PWM control was associated in the current realization. Finally, a linear adjustment of the lamp arc current was warranted by using of a PI regulator.

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 1 2013-01-01 2013-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 1 2014-01-01 2014-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 1 2011-01-01 2011-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 1 2012-01-01 2012-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

14 CFR 27.1367 - Switches.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 1 2010-01-01 2010-01-01 false Switches. 27.1367 Section 27.1367... STANDARDS: NORMAL CATEGORY ROTORCRAFT Equipment Electrical Systems and Equipment § 27.1367 Switches. Each switch must be— (a) Able to carry its rated current; (b) Accessible to the crew; and (c) Labeled as to...

Anisotropy of domain switching in prepoled lead titanate zirconate ceramics under multiaxial electrical loading

NASA Astrophysics Data System (ADS)

Liu, Yuan-Ming; Li, Fa-Xin; Fang, Dai-Ning

2007-01-01

The authors report an observation of anisotropic domain switching process in prepoled lead titanate zirconate (PZT) ceramics under multiaxial electrical loading. Prepoled PZT blocks were obliquely cut to apply an electric field at discrete angles θ (0°-180°) to the initial poling direction. Both the coercive field and switchable polarization are found to decrease significantly when sinθ increases from zero to unity. The measured strain curves show that most domains that accomplished 180° domain switching actually experienced two successive 90° switching. The oriented domain texture after poling plus the induced nonuniform stress are used to explain the observed domain switching anisotropy.

Two Bistable Switches Govern M Phase Entry.

PubMed

Mochida, Satoru; Rata, Scott; Hino, Hirotsugu; Nagai, Takeharu; Novák, Béla

2016-12-19

The abrupt and irreversible transition from interphase to M phase is essential to separate DNA replication from chromosome segregation. This transition requires the switch-like phosphorylation of hundreds of proteins by the cyclin-dependent kinase 1 (Cdk1):cyclin B (CycB) complex. Previous studies have ascribed these switch-like phosphorylations to the auto-activation of Cdk1:CycB through the removal of inhibitory phosphorylations on Cdk1-Tyr15 [1, 2]. The positive feedback in Cdk1 activation creates a bistable switch that makes mitotic commitment irreversible [2-4]. Here, we surprisingly find that Cdk1 auto-activation is dispensable for irreversible, switch-like mitotic entry due to a second mechanism, whereby Cdk1:CycB inhibits its counteracting phosphatase (PP2A:B55). We show that the PP2A:B55-inhibiting Greatwall (Gwl)-endosulfine (ENSA) pathway is both necessary and sufficient for switch-like phosphorylations of mitotic substrates. Using purified components of the Gwl-ENSA pathway in a reconstituted system, we found a sharp Cdk1 threshold for phosphorylation of a luminescent mitotic substrate. The Cdk1 threshold to induce mitotic phosphorylation is distinctly higher than the Cdk1 threshold required to maintain these phosphorylations-evidence for bistability. A combination of mathematical modeling and biochemical reconstitution show that the bistable behavior of the Gwl-ENSA pathway emerges from its mutual antagonism with PP2A:B55. Our results demonstrate that two interlinked bistable mechanisms provide a robust solution for irreversible and switch-like mitotic entry. Copyright © 2016 Elsevier Ltd. All rights reserved.

Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Yang; Feng, Xiao; Ou, Yunbo

We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to amore » quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.« less

Spin currents and spin-orbit torques in ferromagnetic trilayers.

PubMed

Baek, Seung-Heon C; Amin, Vivek P; Oh, Young-Wan; Go, Gyungchoon; Lee, Seung-Jae; Lee, Geun-Hee; Kim, Kab-Jin; Stiles, M D; Park, Byong-Guk; Lee, Kyung-Jin

2018-06-01

Magnetic torques generated through spin-orbit coupling 1-8 promise energy-efficient spintronic devices. For applications, it is important that these torques switch films with perpendicular magnetizations without an external magnetic field 9-14 . One suggested approach 15 to enable such switching uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of the bottom layer. Spin currents generated in the bottom magnetic layer or its interfaces transit the spacer layer and exert a torque on the top magnetization. Here we demonstrate field-free switching in such structures and show that its dependence on the bottom-layer magnetization is not consistent with the anticipated bulk effects 15 . We describe a mechanism for spin-current generation 16,17 at the interface between the bottom layer and the spacer layer, which gives torques that are consistent with the measured magnetization dependence. This other-layer-generated spin-orbit torque is relevant to energy-efficient control of spintronic devices.

On-chip switch for reconfigurable mode-multiplexing optical network.

PubMed

Sun, Chunlei; Yu, Yu; Chen, Guanyu; Zhang, Xinliang

2016-09-19

The switching and routing is essential for an advanced and reconfigurable optical network, and great efforts have been done for traditional single-mode system. We propose and demonstrate an on-chip switch compatible with mode-division multiplexing system. By controlling the induced phase difference, the functionalities of dynamically routing data channels can be achieved. The proposed switch is experimentally demonstrated with low insertion loss of ~1 dB and high extinction ratio of ~20 dB over the C-band for OFF-ON switchover. For further demonstration, the non-return-to-zero on-off keying signals at 10 Gb/s carried on the two spatial modes are successfully processed. Open and clear eye diagrams can be observed and the bit error rate measurements indicate a good data routing performance.

HOLLOTRON switch for megawatt lightweight space inverters

NASA Technical Reports Server (NTRS)

Poeschel, R. L.; Goebel, D. M.; Schumacher, R. W.

1991-01-01

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

PWM Inverter control and the application thereof within electric vehicles

DOEpatents

Geppert, Steven

1982-01-01

An inverter (34) which provides power to an A.C. machine (28) is controlled by a circuit (36) employing PWM control strategy whereby A.C. power is supplied to the machine at a preselectable frequency and preselectable voltage. This is accomplished by the technique of waveform notching in which the shapes of the notches are varied to determine the average energy content of the overall waveform. Through this arrangement, the operational efficiency of the A.C. machine is optimized. The control circuit includes a micro-computer and memory element which receive various parametric inputs and calculate optimized machine control data signals therefrom. The control data is asynchronously loaded into the inverter through an intermediate buffer (38). In its preferred embodiment, the present invention is incorporated within an electric vehicle (10) employing a 144 VDC battery pack (32) and a three-phase induction motor (18).

DNA-Binding Kinetics Determines the Mechanism of Noise-Induced Switching in Gene Networks

PubMed Central

Tse, Margaret J.; Chu, Brian K.; Roy, Mahua; Read, Elizabeth L.

2015-01-01

Gene regulatory networks are multistable dynamical systems in which attractor states represent cell phenotypes. Spontaneous, noise-induced transitions between these states are thought to underlie critical cellular processes, including cell developmental fate decisions, phenotypic plasticity in fluctuating environments, and carcinogenesis. As such, there is increasing interest in the development of theoretical and computational approaches that can shed light on the dynamics of these stochastic state transitions in multistable gene networks. We applied a numerical rare-event sampling algorithm to study transition paths of spontaneous noise-induced switching for a ubiquitous gene regulatory network motif, the bistable toggle switch, in which two mutually repressive genes compete for dominant expression. We find that the method can efficiently uncover detailed switching mechanisms that involve fluctuations both in occupancies of DNA regulatory sites and copy numbers of protein products. In addition, we show that the rate parameters governing binding and unbinding of regulatory proteins to DNA strongly influence the switching mechanism. In a regime of slow DNA-binding/unbinding kinetics, spontaneous switching occurs relatively frequently and is driven primarily by fluctuations in DNA-site occupancies. In contrast, in a regime of fast DNA-binding/unbinding kinetics, switching occurs rarely and is driven by fluctuations in levels of expressed protein. Our results demonstrate how spontaneous cell phenotype transitions involve collective behavior of both regulatory proteins and DNA. Computational approaches capable of simulating dynamics over many system variables are thus well suited to exploring dynamic mechanisms in gene networks. PMID:26488666

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...

49 CFR 229.87 - Hand-operated switches.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Hand-operated switches. 229.87 Section 229.87....87 Hand-operated switches. All hand-operated switches carrying currents with a potential of more than... outside of the cover. Means shall be provided to show whether the switches are open or closed. Switches...